TWI626119B - Cutting apparatus, manufacturing method of polishing pad - Google Patents

Cutting apparatus, manufacturing method of polishing pad Download PDF

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Publication number
TWI626119B
TWI626119B TW102102243A TW102102243A TWI626119B TW I626119 B TWI626119 B TW I626119B TW 102102243 A TW102102243 A TW 102102243A TW 102102243 A TW102102243 A TW 102102243A TW I626119 B TWI626119 B TW I626119B
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Taiwan
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polishing pad
cutting
finished product
semi
holes
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TW102102243A
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Chinese (zh)
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TW201429619A (en
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朱明癸
張舜煌
白昆哲
陳勁弛
沈清煌
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智勝科技股份有限公司
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Priority to TW102102243A priority Critical patent/TWI626119B/en
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Abstract

一種切割裝置,用以將研磨墊半成品切割為具有預定厚度的連續長條狀研磨層或襯墊層。上述連續長條狀研磨層或襯墊層可用以製造研磨墊。上述切割裝置包括轉動機構以及切割機構。轉動機構用於承載研磨墊半成品。切割機構用於切割該研磨墊半成品。當進行切割時,研磨墊半成品沿著圓周方向轉動,且隨著切割時間的進行,研磨墊半成品的半徑會逐漸縮小,直到完成切割動作為止。 A cutting device for cutting a polishing pad blank into a continuous elongated abrasive layer or liner layer having a predetermined thickness. The continuous strip of abrasive layer or liner layer described above can be used to make a polishing pad. The above cutting device includes a rotating mechanism and a cutting mechanism. The rotating mechanism is used to carry the polishing pad semi-finished product. A cutting mechanism is used to cut the polishing pad semi-finished product. When the cutting is performed, the polishing pad semi-finished product rotates in the circumferential direction, and as the cutting time progresses, the radius of the polishing pad blank is gradually reduced until the cutting action is completed.

Description

切割裝置、研磨墊的製造方法 Cutting device, method of manufacturing polishing pad

本發明是有關於一種切割裝置、研磨墊的製造方法以及研磨墊,且特別是有關於一種生產速度快之研磨墊的切割裝置、研磨墊的製造方法以及研磨墊。 The present invention relates to a cutting device, a method of manufacturing a polishing pad, and a polishing pad, and more particularly to a cutting device for producing a polishing pad having a high speed, a method of manufacturing the polishing pad, and a polishing pad.

隨著產業的進步,平坦化製程經常被採用為生產各種元件的製程。在平坦化製程中,化學機械研磨製程經常為產業所使用;一般來說,化學機械研磨(chemical mechanical polishing,CMP)製程是藉由供應具有化學品混合物之研磨液於研磨墊上,並對待研磨的研磨物件施加壓力以將其壓置於研磨墊上,且使物件及研磨墊彼此進行相對運動。藉由相對運動所產生的機械摩擦及研磨液的化學作用下,移除部分物件表層,而使其表面逐漸平坦,來達成平坦化的目的。研磨墊可以是僅有研磨層的單層研磨墊,或是包括研磨層以及襯墊層疊合的雙層或多層研磨墊。其中,研磨層的表面即為與研磨物件接觸的研磨表面,襯墊層則是設置於研磨層的下方用以支撐或緩衝研磨層。 As the industry advances, flattening processes are often adopted as processes for producing various components. In the planarization process, the CMP process is often used in the industry; in general, the chemical mechanical polishing (CMP) process is performed by supplying a slurry with a chemical mixture onto the polishing pad and treating it. The abrasive article applies pressure to press it against the polishing pad and causes the article and the polishing pad to move relative to one another. By the mechanical friction generated by the relative motion and the chemical action of the polishing liquid, the surface layer of some objects is removed, and the surface thereof is gradually flattened to achieve the purpose of planarization. The polishing pad can be a single layer polishing pad with only an abrasive layer, or a double or multiple layer polishing pad comprising an abrasive layer and a liner laminate. Wherein, the surface of the polishing layer is an abrasive surface in contact with the abrasive article, and the liner layer is disposed under the polishing layer to support or buffer the abrasive layer.

以研磨墊的製作而言,通常會先形成研磨墊半成品,研磨墊半成品為柱狀,例如是圓柱狀(cake)。研磨墊半成品靜置成形後進行切割程序以形成具有預定厚度的片狀研磨層,再進行挖槽或開孔、貼合等程序,以完成研磨墊的製作。其中切割程序主要係利用切割裝置將研磨墊半成品 切割成片狀研磨層,已知的切割裝置主要是由一固定切刀(blade)以及一可往復移動的工作台組成,其中可往復移動的工作台用以承載研磨墊半成品,並將其快速移動使切刀將研磨墊半成品切割成多個具有預定厚度的片狀研磨層。 In the production of the polishing pad, the polishing pad semi-finished product is usually formed first, and the polishing pad semi-finished product has a column shape, for example, a cake. After the polishing pad semi-finished product is statically formed, a cutting process is performed to form a sheet-like polishing layer having a predetermined thickness, and then a process of grooving or opening, bonding, and the like is performed to complete the production of the polishing pad. The cutting program mainly uses a cutting device to semi-finish the polishing pad. Cut into a sheet-like abrasive layer, the known cutting device is mainly composed of a fixed blade and a reciprocable table, wherein the reciprocable table is used to carry the polishing pad semi-finished product and quickly The movement causes the cutter to cut the polishing pad blank into a plurality of sheet-like abrasive layers having a predetermined thickness.

在上述的切割程序中,切刀所進行的單次切割動作只能切割出一個具有預定厚度的片狀研磨層,實務上必須要重覆進行多次的切割動作才能將一個柱狀的研磨墊半成品切割成多個具有預定厚度的片狀研磨層。 In the above cutting procedure, the single cutting operation performed by the cutter can only cut a sheet-like polishing layer having a predetermined thickness, and in practice, it is necessary to repeatedly perform a plurality of cutting operations to apply a columnar polishing pad. The semifinished product is cut into a plurality of sheet-like abrasive layers having a predetermined thickness.

本發明提供一種切割裝置,其可以連續切割出具有預定厚度的長條狀研磨層或襯墊層。 The present invention provides a cutting device that can continuously cut an elongated abrasive layer or liner layer having a predetermined thickness.

本發明提供一種研磨墊的製造方法,其以連續生產方式切割出具有預定厚度的長條狀研磨層或襯墊層。 The present invention provides a method of manufacturing a polishing pad which cuts an elongated abrasive layer or liner layer having a predetermined thickness in a continuous production manner.

本發明提供一種研磨墊,其是透過上述切割裝置切割而製成。 The present invention provides a polishing pad which is formed by cutting through the above cutting device.

本發明提出一種切割裝置,用以將研磨墊半成品切割為具有預定厚度的連續長條狀研磨層或襯墊層。上述連續長條狀研磨層或襯墊層可用來製造研磨墊。上述切割裝置包括轉動機構以及切割機構,轉動機構用於承載研磨墊半成品,切割機構用於切割研磨墊半成品。當進行切割時,研磨墊半成品沿著圓周方向轉動,且隨著切割時間的進行,研磨墊半成品的半徑會逐漸縮小,直到完成切割動作為止。 The present invention provides a cutting apparatus for cutting a polishing pad blank into a continuous elongated abrasive layer or liner layer having a predetermined thickness. The continuous strip of abrasive layer or liner layer described above can be used to make a polishing pad. The cutting device comprises a rotating mechanism for carrying a polishing pad semi-finished product and a cutting mechanism for cutting the polishing pad semi-finished product. When the cutting is performed, the polishing pad semi-finished product rotates in the circumferential direction, and as the cutting time progresses, the radius of the polishing pad blank is gradually reduced until the cutting action is completed.

本發明提出一種研磨墊的製造方法,包括以下步驟:首先,提供研磨墊半成品。然後,傳送研磨墊半成品至切割裝置,前述切割裝置具有切割機構,用以將研磨墊半成品切割為具有預定厚度的連續長條狀研磨層或襯墊層,其中當進行切割時,研磨墊半成品沿著圓周方向轉動,且隨著切割時間的進行,研磨墊半成品的半徑會逐漸縮小,直到完成切割動作為止。 The invention provides a method for manufacturing a polishing pad, comprising the following steps: First, a polishing pad semi-finished product is provided. Then, the polishing pad semi-finished product is transferred to the cutting device, and the cutting device has a cutting mechanism for cutting the polishing pad blank into a continuous elongated abrasive layer or liner layer having a predetermined thickness, wherein when the cutting is performed, the polishing pad semi-finished product along the cutting edge The rotation in the circumferential direction, and as the cutting time progresses, the radius of the polishing pad semi-finished product is gradually reduced until the cutting action is completed.

本發明提出一種研磨墊。前述研磨墊係藉由上述切割裝置將研磨墊半成品切割為具有預定厚度的連續長條狀研磨墊半成品所製成。上述研磨墊包括研磨層或襯墊層,研磨層或襯墊層由該連續長條狀研磨墊半成品所製成,研磨層或襯墊層具有第一孔洞群以及第二孔洞群,且研磨層或襯墊層具有第一區域以及第二區域,且第一孔洞群形成於第一區域,第二孔洞群形成於第二區域。其中,第一孔洞群的孔洞數大於第二孔洞群的孔洞數;或第一孔洞群的平均孔徑大於第二孔洞群的平均孔徑。 The invention provides a polishing pad. The polishing pad is formed by cutting the polishing pad blank into a continuous elongated polishing pad semi-finished product having a predetermined thickness by the above cutting device. The polishing pad comprises an abrasive layer or a liner layer, and the polishing layer or the liner layer is made of the continuous elongated polishing pad semi-finished product, the polishing layer or the liner layer has a first hole group and a second hole group, and the polishing layer Or the pad layer has a first area and a second area, and the first hole group is formed in the first area, and the second hole group is formed in the second area. The number of holes in the first hole group is larger than the number of holes in the second hole group; or the average hole diameter of the first hole group is larger than the average hole diameter of the second hole group.

基於上述,本發明透過切割裝置進行連續且不間斷的切割程序,以切割出具有預定厚度的連續長條狀研磨層或襯墊層,再以此研磨層或襯墊層製造研磨墊。據此,透過本發明之研磨墊的製造方法來製造研磨墊可以提升研磨墊的生產效率。此外,本發明之切割裝置所生產之的研磨墊,對於某些特定研磨製程之需求,可從中選擇研磨層或襯墊層之特徵,藉此可以得到所需之研磨特性。 Based on the above, the present invention performs a continuous and uninterrupted cutting process through a cutting device to cut a continuous elongated polishing layer or liner layer having a predetermined thickness, and then the polishing pad or liner layer is used to manufacture the polishing pad. Accordingly, the production of the polishing pad by the method of manufacturing the polishing pad of the present invention can improve the production efficiency of the polishing pad. In addition, the polishing pad produced by the cutting apparatus of the present invention can select the characteristics of the abrasive layer or the backing layer for the needs of certain specific polishing processes, whereby the desired polishing characteristics can be obtained.

為讓本發明之上述特徵和優點能更明顯易懂,下文特 舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above features and advantages of the present invention more obvious, the following The embodiments are described in detail with reference to the accompanying drawings.

圖1為本發明實施例之研磨墊的製造流程示意圈。請參照圖1,首先,提供研磨墊半成品10。在本實施例中,研磨墊半成品10可透過直立模具灌注法或橫向模具灌注法形成,且研磨墊半成品10的形狀例如是圓柱型。 1 is a schematic flow chart of a manufacturing process of a polishing pad according to an embodiment of the present invention. Referring to Figure 1, first, a polishing pad blank 10 is provided. In the present embodiment, the polishing pad blank 10 can be formed by an upright die casting method or a lateral die casting method, and the shape of the polishing pad blank 10 is, for example, a cylindrical shape.

將研磨墊半成品10傳送至切割裝置200中。舉例而言,切割裝置200包括轉動機構210,且轉動機構210可以承載研磨墊半成品10。以圖1的實施例來看,研磨墊半成品10例如是透過被轉動機構210從側面夾持以承載於切割裝置200的轉動機構210上,其中轉動機構210例如是轉動軸,圓柱型之研磨墊半成品10的中心固定於此轉動軸,因此轉動機構210在運作之時,可以帶動圓柱型之研磨墊半成品10沿著圓周方向D1轉動。 The polishing pad blank 10 is transferred to the cutting device 200. For example, the cutting device 200 includes a rotating mechanism 210, and the rotating mechanism 210 can carry the polishing pad blank 10. In the embodiment of FIG. 1, the polishing pad blank 10 is, for example, clamped from the side by the rotating mechanism 210 to be carried on the rotating mechanism 210 of the cutting device 200, wherein the rotating mechanism 210 is, for example, a rotating shaft, a cylindrical polishing pad. The center of the semi-finished product 10 is fixed to the rotating shaft, so that the rotating mechanism 210 can drive the cylindrical polishing pad blank 10 to rotate in the circumferential direction D1 during operation.

切割裝置200具有切割機構220,用於切割研磨墊半成品10,切割機構220例如是一固定式切刀。當切割程序進行時,可控制轉動機構210與切割機構220的相對位置,使切割機構220的切割端接觸研磨墊半成品10,使轉動機構210開始運作以讓研磨墊半成品10沿著圓周方向D1不斷地轉動,並且沿著切割方向D2進行連續的切割動作,以使研磨墊半成品10被切割機構220切割成連續且不間斷的長條狀研磨層或襯墊層10a。 The cutting device 200 has a cutting mechanism 220 for cutting the polishing pad blank 10, for example a fixed cutter. When the cutting process is performed, the relative position of the rotating mechanism 210 and the cutting mechanism 220 can be controlled such that the cutting end of the cutting mechanism 220 contacts the polishing pad blank 10, so that the rotating mechanism 210 starts to operate so that the polishing pad semi-finished product 10 continues in the circumferential direction D1. The ground is rotated, and a continuous cutting action is performed along the cutting direction D2 to cause the polishing pad blank 10 to be cut by the cutting mechanism 220 into a continuous and uninterrupted elongated abrasive layer or liner layer 10a.

隨著切割動作的進行,研磨墊半成品10的體積會逐 漸變小直到切割完成。換言之,研磨墊半成品10的半徑會在切割過程中逐漸縮減。在此連續切割過程,可以控制轉動機構210與切割機構220之間的相對位置,以確保切割裝置200可以不間斷地進行切割動作。舉例而言,控制轉動機構210與切割機構220之間的相對位置的方式可以是移動轉動機構210以及切割機構220的其中一者或是同時移動兩者,使兩者之間具有適當距離。在一實施例中,切割機構220的相對位置為逐漸往研磨墊半成品10半徑縮減的方向移動。而轉動機構210的轉動速度亦可隨連續切割過程加以控制,例如越往半徑縮減的方向切割時轉動機構210的轉動速度越快,使得切割機構220具有較一致的切割線速度。 As the cutting action proceeds, the volume of the polishing pad semi-finished product 10 will be The gradient is small until the cut is complete. In other words, the radius of the polishing pad blank 10 is gradually reduced during the cutting process. In this continuous cutting process, the relative position between the rotating mechanism 210 and the cutting mechanism 220 can be controlled to ensure that the cutting device 200 can perform the cutting action without interruption. For example, the relative position between the rotating mechanism 210 and the cutting mechanism 220 may be controlled by moving one of the rotating mechanism 210 and the cutting mechanism 220 or both, with an appropriate distance therebetween. In one embodiment, the relative position of the cutting mechanism 220 is gradually moved in a direction in which the radius of the polishing pad blank 10 is reduced. The rotational speed of the rotating mechanism 210 can also be controlled along with the continuous cutting process. For example, the faster the rotational speed of the rotating mechanism 210 is when cutting in the direction of decreasing radius, so that the cutting mechanism 220 has a relatively uniform cutting linear velocity.

在圖1的實施例中,切割機構220是以固定式切刀為例作說明,但本發明不限於此,在其他實施例中也可以使用往復移動式切刀、往復移動式線鋸、循環移動式切刀、循環移動式線鋸、雷射切割工具、或是其他適當的切割工具。 In the embodiment of FIG. 1 , the cutting mechanism 220 is exemplified by a fixed cutter, but the invention is not limited thereto, and in other embodiments, a reciprocating cutter, a reciprocating wire saw, and a loop may also be used. Mobile cutters, loop-operated wire saws, laser cutting tools, or other suitable cutting tools.

已完成切割之長條狀研磨層或襯墊層10a可以藉由輸出機構(未繪示)輸出切割裝置200,輸出機構例如是輸出平台或捲收裝置。上述捲收裝置可將長條狀研磨層或襯墊層10a捲收成捲狀,以便於貯存。此外,已完成切割之長條狀研磨層或襯墊層10a具有預定的厚度t,厚度t例如為介於0.5mm至5.0mm,其中長條狀研磨層或襯墊層10a的厚度t可取決於轉動機構210與切割機構220之間的距離。 換言之,可以依照所欲製造的研磨墊的厚度,設計並調整轉動機構210與切割機構220之間的距離,就可以切割出具有預定厚度(即指t)的研磨層或襯墊層10a。 The elongated abrasive layer or liner layer 10a that has been cut can be outputted by an output mechanism (not shown), such as an output platform or a take-up device. The above-mentioned winding device can wind the long abrasive layer or the backing layer 10a into a roll shape for storage. Further, the elongated abrasive layer or liner layer 10a which has been cut has a predetermined thickness t, for example, from 0.5 mm to 5.0 mm, wherein the thickness t of the elongated abrasive layer or liner layer 10a may depend on The distance between the rotating mechanism 210 and the cutting mechanism 220. In other words, the polishing layer or liner layer 10a having a predetermined thickness (i.e., t) can be cut by designing and adjusting the distance between the rotating mechanism 210 and the cutting mechanism 220 in accordance with the thickness of the polishing pad to be manufactured.

在一實施例中,切割裝置200可以選擇性地更包括磨利機構(未繪示),磨利機構例如是砂輪。若切割機構220為機械刀具,切割機構220的切割端可能會有磨損的情形發生,當切割機構220切割研磨墊半成品10後或者於切割進行中,可透過磨利機構研磨切割機構220並使切割機構220的切割端維持銳利的狀態。 In an embodiment, the cutting device 200 can optionally further include a sharpening mechanism (not shown), such as a grinding wheel. If the cutting mechanism 220 is a mechanical cutter, the cutting end of the cutting mechanism 220 may be worn. When the cutting mechanism 220 cuts the polishing pad semi-finished product 10 or during the cutting process, the cutting mechanism 220 can be ground and cut by the sharpening mechanism. The cutting end of mechanism 220 maintains a sharp state.

在一實施例中,使用切割裝置200製作研磨墊的製造流程可以選擇性地包括加熱步驟,將研磨墊半成品10先預熱至軟化狀態,接著才進行切割程序。此實施例特別適合用來切割以高硬度材料所製成的研磨墊,利用加熱步驟來降低研磨墊的硬度,不僅容易進行切割更可避免切割機構220因切割高硬度材料而產生鈍化、磨損。據此,切割裝置200可以選擇性地包括加熱機構(未繪示),加熱機構的加熱媒介例如是電熱方式或是熱流體方式。加熱機構也可以是其他適當的加熱裝置,例如是熱風加熱裝置或是紅外線加熱裝置。加熱機構可選擇配置於切割裝置200上,或是額外獨立於切割裝置200。上述加熱步驟可以使研磨墊半成品10的溫度上升並軟化,以使切割機構220能夠較為輕易地切割研磨墊半成品10。較佳地是,透過加熱步驟將研磨墊半成品10的溫度加熱至接近其玻璃轉換溫度(glass transition temperature,Tg),使研磨墊半成品10達到較軟化 的狀態,將有助於後續切割程序的進行。 In one embodiment, the manufacturing process for making the polishing pad using the cutting device 200 can optionally include a heating step to preheat the polishing pad blank 10 to a softened state before proceeding with the cutting process. This embodiment is particularly suitable for cutting a polishing pad made of a high-hardness material, and using a heating step to reduce the hardness of the polishing pad, which not only facilitates cutting but also prevents the cutting mechanism 220 from being passivated and worn by cutting a high-hardness material. Accordingly, the cutting device 200 can optionally include a heating mechanism (not shown), and the heating medium of the heating mechanism is, for example, an electrothermal method or a thermal fluid method. The heating mechanism can also be other suitable heating means, such as a hot air heating device or an infrared heating device. The heating mechanism can be optionally disposed on the cutting device 200 or additionally independent of the cutting device 200. The above heating step can raise and soften the temperature of the polishing pad blank 10 so that the cutting mechanism 220 can relatively easily cut the polishing pad blank 10. Preferably, the temperature of the polishing pad blank 10 is heated to a temperature close to its glass transition temperature (Tg) through a heating step, so that the polishing pad semi-finished product 10 is softened. The status will help the subsequent cutting process.

在一實施例中,研磨墊半成品的形成方法可為直立模具灌注法,依據此方法所形成的研磨墊半成品,可控制原料的配方或是發泡條件,使研磨墊半成品具有至少兩個不同孔洞密度的區域,且這至少兩個不同孔洞密度的區域分別分佈於研磨墊半成品之高方向不同的位置。於此,高方向係指與圓柱型研磨墊半成品之圓形底面垂直的方向。同時,以此研磨墊半成品所製成的研磨層或襯墊層具有複數個孔洞,研磨層或襯墊層具有第一區域以及第二區域,其中位於第一區域內的孔洞群的孔洞數大於位於第二區域內的孔洞群的孔洞數,或位於第一區域內的孔洞群的平均孔徑大於位於第二區域內的孔洞群的平均孔徑。 In an embodiment, the method for forming the polishing pad semi-finished product may be an upright die casting method, and the polishing pad semi-finished product formed according to the method may control the formulation of the raw material or the foaming condition, so that the polishing pad semi-finished product has at least two different holes. The region of density, and the regions of at least two different hole densities are respectively distributed at different positions in the high direction of the polishing pad semi-finished product. Here, the high direction means a direction perpendicular to the circular bottom surface of the cylindrical polishing pad blank. At the same time, the polishing layer or the liner layer made of the polishing pad semi-finished product has a plurality of holes, and the polishing layer or the liner layer has a first region and a second region, wherein the number of holes in the hole group in the first region is greater than The number of holes in the hole group in the second region, or the average hole diameter of the hole group in the first region is larger than the average pore size of the hole group in the second region.

圖2A為本發明實施例之研磨墊半成品形成後的結構示意圖。圖2B繪示以圖2A之研磨墊半成品製造的研磨墊之結構示意圖。請參照圖2A以及圖2B,在本實施例中,研磨墊半成品10是由直立模具灌注法所形成。直立模具灌注法例如是將研磨墊原料灌注到直立擺放的模具中,並且靜置成型。具體而言,本實施例使用圓筒狀的模具,因此靜置成型後的研磨墊半成品10的形狀為圓柱型。在已成型的圓柱型研磨墊半成品10中具有多個孔洞,其中位於圓柱型研磨墊半成品10上方(即高方向較大之區域)的孔洞H1數量大於位於圓柱型研磨墊半成品10下方(即高方向較小之區域)的孔洞H2數量,或是位於圓柱型研磨墊半成品10上方的孔洞H1的平均孔徑大於位於圓柱型研磨墊 半成品10下方的孔洞H2的平均孔徑。換言之,位於圓柱型研磨墊半成品10上方的孔洞H1體積大於位於圓柱型研磨墊半成品10下方的孔洞H2體積。 2A is a schematic view showing the structure of a polishing pad semi-finished product according to an embodiment of the present invention. 2B is a schematic view showing the structure of the polishing pad manufactured by the polishing pad semi-finished product of FIG. 2A. Referring to FIG. 2A and FIG. 2B, in the present embodiment, the polishing pad blank 10 is formed by an upright die casting method. The upright mold infusion method is, for example, injecting a polishing pad material into an uprightly placed mold and standing still. Specifically, in this embodiment, a cylindrical mold is used, and thus the shape of the polishing pad blank 10 after standing molding is a cylindrical shape. There are a plurality of holes in the formed cylindrical polishing pad semi-finished product 10, wherein the number of holes H1 located above the cylindrical polishing pad semi-finished product 10 (ie, the region in the high direction is larger) is located below the cylindrical polishing pad semi-finished product 10 (ie, high) The number of holes H2 in the direction of the smaller direction, or the hole H1 above the cylindrical polishing pad semi-finished product 10 is larger than the average diameter of the hole in the cylindrical polishing pad The average pore size of the hole H2 below the semi-finished product 10. In other words, the volume of the hole H1 above the cylindrical polishing pad blank 10 is larger than the volume of the hole H2 located below the cylindrical polishing pad blank 10.

將已成形的研磨墊半成品10透過圖1之切割裝置200沿著切割方向D2進行切割後,再進行後續的處理程序(如裁切程序),以得到如圖2B所示的研磨層或襯墊層100a,此研磨層或襯墊層100a具有切割軌跡,切割軌跡方向大致平行於切割方向D2。具體而言,研磨層或襯墊層100a具有第一區域R1以及第二區域R2,其中第一區域R1以及第二區域R2位於切割方向之相對兩側。換言之,在與切割方向D2大致上垂直的垂直方向D3之上方為第一區域R1,而在垂直方向D3之下方為第二區域R2。在本實施例中,第一區域R1例如是對應至原本圓柱型研磨墊半成品10之上方位置(即高方向較大之區域),而第二區域R2例如是對應至原本圓柱型研磨墊半成品10之下方位置(即高方向較小之區域)。據此,位於第一區域R1的孔洞H1的數量大於位於第二區域R2的孔洞H2數量,或位於第一區域R1上方的孔洞H1的平均孔徑大於位於第二區域R2的孔洞H2的平均孔徑。換句話說,第一區域R1以及第二區域R2之分佈方向大致平行於切割軌跡方向。 After the formed polishing pad blank 10 is cut through the cutting device 200 of FIG. 1 along the cutting direction D2, a subsequent processing procedure (such as a cutting process) is performed to obtain an abrasive layer or liner as shown in FIG. 2B. Layer 100a, this abrasive layer or liner layer 100a has a cutting trajectory that is substantially parallel to the cutting direction D2. Specifically, the polishing layer or liner layer 100a has a first region R1 and a second region R2, wherein the first region R1 and the second region R2 are located on opposite sides of the cutting direction. In other words, the first region R1 is above the vertical direction D3 substantially perpendicular to the cutting direction D2, and the second region R2 is below the vertical direction D3. In the present embodiment, the first region R1 corresponds to the upper position of the original cylindrical polishing pad semi-finished product 10 (ie, the region having a larger height in the high direction), and the second region R2 corresponds to the original cylindrical polishing pad semi-finished product 10, for example. The lower position (ie, the area with a smaller height). Accordingly, the number of holes H1 located in the first region R1 is larger than the number of holes H2 located in the second region R2, or the average hole diameter of the holes H1 located above the first region R1 is larger than the average pore diameter of the holes H2 located in the second region R2. In other words, the distribution directions of the first region R1 and the second region R2 are substantially parallel to the direction of the cutting track.

以另一方面來看,圖2B的研磨層或襯墊層100a可視為具有第一孔洞群以及第二孔洞群,其中第一孔洞群由孔洞H1構成且第二孔洞群由孔洞H2構成。第一孔洞群的孔洞H1數量大於第二孔洞群的孔洞H2數量,或第一孔洞群 的孔洞H1的平均孔徑大於第二孔洞群的孔洞H2的平均孔徑。此外,本實施例之研磨層或襯墊層100a的形狀是以長方形為例說明,但本發明不以此為限。在其他實施例中,研磨層或襯墊層可以是設計成正方形、圓形或是其他預定的形狀。 On the other hand, the polishing layer or liner layer 100a of FIG. 2B can be considered to have a first group of holes and a second group of holes, wherein the first group of holes is composed of holes H1 and the second group of holes is composed of holes H2. The number of holes H1 of the first hole group is larger than the number of holes H2 of the second hole group, or the first hole group The average pore diameter of the hole H1 is larger than the average pore diameter of the hole H2 of the second hole group. In addition, the shape of the polishing layer or the backing layer 100a of the present embodiment is described by taking a rectangular shape as an example, but the invention is not limited thereto. In other embodiments, the abrasive layer or backing layer can be designed as a square, a circle, or other predetermined shape.

在另一實施例中,研磨墊半成品的形成方法可為橫向模具灌注法,依據此方法所形成的研磨墊半成品,可控制原料的配方或是發泡條件,使研磨墊半成品具有至少兩個不同孔洞密度的區域,且這至少兩個不同孔洞密度的區域分別分佈於研磨墊半成品之半徑角度方向不同的位置。於此,半徑角度方向係指研磨墊半成品之圓柱型中半徑角度所對應之方向。同時,以此研磨墊半成品所製成的研磨墊具有一第一孔洞群以及一第二孔洞群,第一孔洞群與第二孔洞群交錯排列分佈於研磨墊,其中第一孔洞群的孔洞數大於第二孔洞群的孔洞數,或第一孔洞群的平均孔徑大於第二孔洞群的平均孔徑。 In another embodiment, the method for forming the polishing pad semi-finished product may be a lateral die casting method, and the polishing pad semi-finished product formed according to the method may control the formulation of the raw material or the foaming condition, so that the polishing pad semi-finished product has at least two different The region of the density of the holes, and the regions of the at least two different hole densities are respectively distributed at different positions in the radial direction of the polishing pad semi-finished product. Here, the radial angle direction refers to the direction corresponding to the radius angle of the cylindrical shape of the polishing pad semi-finished product. At the same time, the polishing pad made of the polishing pad semi-finished product has a first hole group and a second hole group, and the first hole group and the second hole group are alternately arranged on the polishing pad, wherein the number of holes of the first hole group The number of holes larger than the second hole group, or the average hole diameter of the first hole group is larger than the average hole diameter of the second hole group.

圖3A為本發明實施例之研磨墊半成品形成後的結構示意圖。圖3B繪示以圖3A之研磨墊半成品製造的研磨墊之結構示意圖。請參照圖3A以及圖3B,在本實施例中,研磨墊半成品10是由橫向模具灌注法所形成。橫向模具灌注法例如是將研磨墊原料灌注到橫向擺放的模具中,並且靜置成型。具體而言,本實施例使用圓筒狀的模具,因此靜置成型後的研磨墊半成品10的形狀為圓柱型。在已成型後的圓柱型研磨墊半成品10中具有多個孔洞,其中位於橫 向的圓柱型研磨墊半成品10上方(即半徑角度約0至180度方向之區域)的孔洞H1數量大於位於橫向的圓柱型研磨墊半成品10下方(即半徑角度方向約180至360度方向之區域)的孔洞H2數量,或是位於橫向的圓柱型研磨墊半成品10上方的孔洞H1的平均孔徑大於位於橫向的圓柱型研磨墊半成品10下方的孔洞H2的平均孔徑。換言之,位於橫向的圓柱型研磨墊半成品10上方的孔洞H1體積大於位於橫向的圓柱型研磨墊半成品10下方的孔洞H2體積。 3A is a schematic view showing the structure of a polishing pad semi-finished product according to an embodiment of the present invention. FIG. 3B is a schematic view showing the structure of the polishing pad manufactured by the polishing pad semi-finished product of FIG. 3A. Referring to FIG. 3A and FIG. 3B, in the present embodiment, the polishing pad blank 10 is formed by a lateral die casting method. The transverse mold infusion method is, for example, injecting the polishing pad material into a mold placed laterally and standing still. Specifically, in this embodiment, a cylindrical mold is used, and thus the shape of the polishing pad blank 10 after standing molding is a cylindrical shape. In the cylindrical polishing pad semi-finished product 10 after molding, there are a plurality of holes, which are located in the horizontal The number of holes H1 above the cylindrical polishing pad semi-finished product 10 (i.e., the region having a radius angle of about 0 to 180 degrees) is larger than the horizontal cylindrical polishing pad semi-finished product 10 (i.e., an area of about 180 to 360 degrees in the radial direction direction). The number of holes H2, or the hole H1 above the cylindrical cylindrical polishing pad blank 10, has an average pore diameter larger than the average hole diameter of the hole H2 located below the cylindrical cylindrical polishing pad blank 10. In other words, the volume of the hole H1 above the cylindrical cylindrical polishing pad blank 10 is larger than the volume of the hole H2 below the cylindrical cylindrical polishing pad blank 10.

將已成形的圓柱型研磨墊半成品10透過圖1之切割裝置200沿著切割方向D2進行切割後,再進行後續的處理程序(如裁切程序),以得到如圖3B所示的研磨層或襯墊層100b,此研磨層或襯墊層100b具有切割軌跡,切割軌跡方向大致平行於切割方向D2。具體而言,研磨層或襯墊層100b具有第一區域R1以及第二區域R2,其中第一區域R1以及第二區域R2沿切割方向D2交錯排列於研磨墊100b。在本實施例中,第一區域R1例如是對應至原本橫向的圓柱型研磨墊半成品10之上方位置(即半徑角度約0至180度方向之區域),而第二區域R2例如是對應至原本橫向的圓柱型研磨墊半成品10之下方位置(即半徑角度方向約180至360度方向之區域)。據此,位於第一區域R1的孔洞H1的數量大於位於第二區域R2的孔洞H2數量,或位於第一區域R1上方的孔洞H1的平均孔徑大於位於第二區域R2的孔洞H2的平均孔徑。換句話說,第一區 域R1以及第二區域R2之分佈方向大致垂直於切割軌跡方向。 After the formed cylindrical polishing pad blank 10 is cut through the cutting device 200 of FIG. 1 along the cutting direction D2, a subsequent processing procedure (such as a cutting process) is performed to obtain an abrasive layer as shown in FIG. 3B or The liner layer 100b has a cutting trajectory in which the direction of the cutting track is substantially parallel to the cutting direction D2. Specifically, the polishing layer or liner layer 100b has a first region R1 and a second region R2, wherein the first region R1 and the second region R2 are staggered in the cutting direction D2 on the polishing pad 100b. In the present embodiment, the first region R1 corresponds to, for example, an upper position of the cylindrical polishing pad semi-finished product 10 (ie, a region having a radius angle of about 0 to 180 degrees), and the second region R2 corresponds to the original portion. The position of the horizontal cylindrical polishing pad semi-finished product 10 (i.e., the region in the direction of the radial angle of about 180 to 360 degrees). Accordingly, the number of holes H1 located in the first region R1 is larger than the number of holes H2 located in the second region R2, or the average hole diameter of the holes H1 located above the first region R1 is larger than the average pore diameter of the holes H2 located in the second region R2. In other words, the first district The distribution direction of the domain R1 and the second region R2 is substantially perpendicular to the direction of the cutting track.

以另一方面來看,圖3B的研磨層或襯墊層100b可視為具有第一孔洞群以及第二孔洞群,其中第一孔洞群由孔洞H1構成且第二孔洞群由孔洞H2構成。第一孔洞群的孔洞H1數量大於第二孔洞群的孔洞H2數量,第一孔洞群的孔洞H1的平均孔徑大於第二孔洞群的孔洞H2的平均孔徑,或第一孔洞群與第二孔洞群交錯排列分佈於研磨層或襯墊層100b。此外,本實施例之研磨層或襯墊層100b的形狀是以長方形為例說明,但本發明不以此為限。在其他實施例中,研磨層或襯墊層可以是設計成正方形、圓形或是其他預定的形狀。 On the other hand, the polishing layer or liner layer 100b of FIG. 3B can be considered to have a first group of holes and a second group of holes, wherein the first group of holes is composed of holes H1 and the second group of holes is composed of holes H2. The number of holes H1 of the first hole group is larger than the number of holes H2 of the second hole group, the average hole diameter of the hole H1 of the first hole group is larger than the average hole diameter of the hole H2 of the second hole group, or the first hole group and the second hole group The staggered arrangement is distributed over the abrasive layer or liner layer 100b. In addition, the shape of the polishing layer or the backing layer 100b of the present embodiment is described by taking a rectangular shape as an example, but the invention is not limited thereto. In other embodiments, the abrasive layer or backing layer can be designed as a square, a circle, or other predetermined shape.

經由上述切割裝置所完成的研磨層或襯墊層,可依需求再進行挖槽或開孔、貼合等程序,以完成僅有研磨層的單層研磨墊,或是包括研磨層以及襯墊層疊合的雙層或多層研磨墊。在一實施例中,特別是對於雙層或多層研磨墊而言,研磨層與襯墊層的切割軌跡在疊合的配置方向,可選擇彼此的切割軌跡為同方向,或選擇彼此的切割軌跡具有一夾角。 The polishing layer or the liner layer which is completed by the above cutting device can be further grooved or perforated, bonded, etc., to complete a single layer polishing pad with only the polishing layer, or include the polishing layer and the liner. Laminated double or multi-layer polishing pads. In an embodiment, particularly for a two-layer or multi-layer polishing pad, the cutting trajectory of the polishing layer and the lining layer are in the overlapping arrangement direction, and the cutting trajectories of each other may be selected to be in the same direction, or the cutting trajectories of each other may be selected. Has an angle.

綜上所述,本發明透過切割裝置的轉動機構帶動研磨墊半成品沿著圓周方向轉動,切割機構將研磨墊半成品連續切割成具有預定厚度的長條狀研磨層或襯墊層。據此,透過本發明之切割裝置來製造研磨墊可以提升研磨墊的生產效率。此外,本發明之切割裝置所生產之研磨墊,對於 某些特定研磨製程之需求,可從以上說明詳述之研磨層或襯墊層特徵中作選擇,藉此可以獲得所需之研磨特性。 In summary, the present invention drives the polishing pad semi-finished product to rotate in the circumferential direction through the rotating mechanism of the cutting device, and the cutting mechanism continuously cuts the polishing pad semi-finished product into a long abrasive layer or liner layer having a predetermined thickness. Accordingly, the production of the polishing pad by the cutting device of the present invention can improve the production efficiency of the polishing pad. In addition, the polishing pad produced by the cutting device of the present invention, The requirements of certain polishing processes can be selected from the abrasive layer or liner features detailed above to achieve the desired abrasive characteristics.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧研磨墊半成品 10‧‧‧ polishing pad semi-finished products

10a‧‧‧研磨層或襯墊層 10a‧‧‧Abrasion or lining

100a、100b‧‧‧研磨層或襯墊層 100a, 100b‧‧‧grinding or lining

200‧‧‧切割裝置 200‧‧‧ cutting device

210‧‧‧轉動機構 210‧‧‧Rotating mechanism

220‧‧‧切割機構 220‧‧‧ cutting mechanism

D1‧‧‧圓周方向 D1‧‧‧ circumferential direction

D2‧‧‧切割方向 D2‧‧‧ cutting direction

D3‧‧‧垂直方向 D3‧‧‧Vertical direction

R1‧‧‧第一區域 R1‧‧‧ first area

R2‧‧‧第二區域 R2‧‧‧ second area

H1、H2‧‧‧孔洞 H1, H2‧‧‧ holes

t‧‧‧厚度 T‧‧‧thickness

圖1為本發明實施例之研磨墊的製造流程示意圈。 1 is a schematic flow chart of a manufacturing process of a polishing pad according to an embodiment of the present invention.

圖2A為本發明實施例之研磨墊半成品形成後的結構示意圖。 2A is a schematic view showing the structure of a polishing pad semi-finished product according to an embodiment of the present invention.

圖2B繪示以圖2A之研磨墊半成品製造的研磨墊之結構示意圖。 2B is a schematic view showing the structure of the polishing pad manufactured by the polishing pad semi-finished product of FIG. 2A.

圖3A為本發明實施例之研磨墊半成品形成後的結構示意圖。 3A is a schematic view showing the structure of a polishing pad semi-finished product according to an embodiment of the present invention.

圖3B繪示以圖3A之研磨墊半成品製造的研磨墊之結構示意圖。 FIG. 3B is a schematic view showing the structure of the polishing pad manufactured by the polishing pad semi-finished product of FIG. 3A.

Claims (20)

一種切割裝置,用以將一研磨墊半成品切割為具有預定厚度的連續長條狀研磨層或襯墊層,來製造一研磨墊,該切割裝置包括:一轉動機構,用於承載該研磨墊半成品;以及一切割機構,用於切割該研磨墊半成品;其中當進行切割時,該研磨墊半成品沿著一圓周方向轉動,且隨著切割時間的進行,該研磨墊半成品的半徑會逐漸縮小,直到完成切割動作為止,其中該研磨墊具有複數個孔洞,該研磨墊具有一第一區域以及一第二區域,其中位於該第一區域內的該些孔洞的孔洞數大於位於該第二區域內的該些孔洞的孔洞數,或位於該第一區域內的該些孔洞的平均孔徑大於位於該第二區域內的該些孔洞的平均孔徑,其中該研磨墊半成品係為一圓柱型磨墊半成品,該圓柱型磨墊半成品之中心固定於該轉動軸,其中該圓柱型研磨墊半成品具有至少兩個不同孔洞密度的區域,該至少兩個不同孔洞密度的區域分別分佈於該圓柱型研磨墊半成品之高方向不同的位置,或該至少兩個不同孔洞密度的區域分別分佈於該圓柱型研磨墊半成品之半徑角度方向不同的位置。 A cutting device for cutting a polishing pad blank into a continuous elongated abrasive layer or liner layer having a predetermined thickness to manufacture a polishing pad, the cutting device comprising: a rotating mechanism for carrying the polishing pad semi-finished product And a cutting mechanism for cutting the polishing pad semi-finished product; wherein when the cutting is performed, the polishing pad semi-finished product rotates in a circumferential direction, and as the cutting time progresses, the radius of the polishing pad semi-finished product gradually decreases until Before the cutting operation is completed, the polishing pad has a plurality of holes, the polishing pad has a first area and a second area, wherein the holes in the first area have a larger number of holes than in the second area The number of holes of the holes, or the average pore diameter of the holes in the first region is larger than the average pore diameter of the holes in the second region, wherein the polishing pad semi-finished product is a cylindrical sanding pad semi-finished product. The center of the cylindrical sanding pad semi-finished product is fixed to the rotating shaft, wherein the cylindrical polishing pad semi-finished product has at least two different holes The area of the at least two different hole densities respectively distributed at different positions in the high direction of the cylindrical polishing pad semi-finished product, or the regions of the at least two different hole densities respectively distributed on the radius of the cylindrical polishing pad semi-finished product Locations with different angular directions. 如申請專利範圍第1項所述之切割裝置,其中該切割機構包括固定式切刀、往復移動式切刀、往復移動式線鋸、循環移動式切刀、循環移動式線鋸、或雷射切割工具。 The cutting device of claim 1, wherein the cutting mechanism comprises a fixed cutter, a reciprocating cutter, a reciprocating wire saw, a circulating movable cutter, a circulating mobile wire saw, or a laser. Cutting tool. 如申請專利範圍第1項所述之切割裝置,其中轉動機構係為一轉動軸。 The cutting device of claim 1, wherein the rotating mechanism is a rotating shaft. 如申請專利範圍第1項所述之切割裝置,其中該研磨墊具有一第一孔洞群以及一第二孔洞群,該第一孔洞群與該第二孔洞群交錯排列分佈於該研磨墊,其中該第一孔洞群的孔洞數大於該第二孔洞群的孔洞數,或該第一孔洞群的平均孔徑大於該第二孔洞群的平均孔徑。 The cutting device of claim 1, wherein the polishing pad has a first hole group and a second hole group, and the first hole group and the second hole group are alternately arranged on the polishing pad, wherein The number of holes of the first hole group is larger than the number of holes of the second hole group, or the average hole diameter of the first hole group is larger than the average hole diameter of the second hole group. 如申請專利範圍第1項所述之切割裝置,更包括一加熱機構,用於加熱該研磨墊半成品。 The cutting device of claim 1, further comprising a heating mechanism for heating the polishing pad semi-finished product. 如申請專利範圍第1項所述之切割裝置,更包括一輸出機構,用於輸出已完成切割之該研磨墊半成品。 The cutting device of claim 1, further comprising an output mechanism for outputting the polishing pad semi-finished product that has been cut. 如申請專利範圍第6項所述之切割裝置,其中該輸出機構為一輸出平台或一捲收裝置。 The cutting device of claim 6, wherein the output mechanism is an output platform or a take-up device. 如申請專利範圍第1項所述之切割裝置,更包括一磨利機構,用於磨利該切割機構。 The cutting device of claim 1, further comprising a sharpening mechanism for sharpening the cutting mechanism. 如申請專利範圍第8項所述之切割裝置,其中該磨利機構為一砂輪。 The cutting device of claim 8, wherein the grinding mechanism is a grinding wheel. 一種研磨墊的製造方法,包括:提供一研磨墊半成品;以及傳送該研磨墊半成品至一切割裝置,該切割裝置具有一切割機構,用以將一研磨墊半成品切割為具有預定厚度的連續長條狀研磨層或襯墊層;其中,當進行切割時,該研磨墊半成品沿著一圓周方向轉動,且隨著切割時間的進行,該研磨墊半成品的半徑 會逐漸縮小,直到完成切割動作為止,其中該研磨層或襯墊層具有複數個孔洞,該研磨層或襯墊層具有一第一區域以及一第二區域,其中位於該第一區域內的該些孔洞的孔洞數大於位於該第二區域內的該些孔洞的孔洞數,或位於該第一區域內的該些孔洞的平均孔徑大於位於該第二區域內的該些孔洞的平均孔徑,其中該研磨墊半成品係為一圓柱型研磨墊半成品,該圓柱型研磨墊半成品之中心固定於該轉動軸,其中該圓柱型研磨墊半成品具有至少兩個不同孔洞密度的區域,當該圓柱型研磨墊半成品的形成方法係為直立模具灌注法時,該至少兩個不同孔洞密度的區域分別分佈於該圓柱型研磨墊半成品之高方向不同的位置,或當該圓柱型研磨墊半成品的形成方法係為橫向模具灌注法時,該至少兩個不同孔洞密度的區域分別分佈於該圓柱型研磨墊半成品之半徑角度方向不同的位置。 A manufacturing method of a polishing pad, comprising: providing a polishing pad semi-finished product; and conveying the polishing pad semi-finished product to a cutting device, the cutting device having a cutting mechanism for cutting a polishing pad blank into a continuous strip having a predetermined thickness An abrasive layer or a liner layer; wherein, when the cutting is performed, the polishing pad semi-finished product rotates in a circumferential direction, and the radius of the polishing pad semi-finished product as the cutting time progresses Gradually shrinking until the cutting action is completed, wherein the polishing layer or the backing layer has a plurality of holes, the polishing layer or the backing layer having a first area and a second area, wherein the first layer is located in the first area The number of holes in the holes is greater than the number of holes in the holes in the second region, or the average pore diameter of the holes in the first region is larger than the average pore size of the holes in the second region, wherein The polishing pad semi-finished product is a cylindrical polishing pad semi-finished product, and the center of the cylindrical polishing pad semi-finished product is fixed to the rotating shaft, wherein the cylindrical polishing pad semi-finished product has at least two regions of different hole densities when the cylindrical polishing pad When the semi-finished product is formed by the upright mold infusion method, the at least two regions of different hole densities are respectively distributed at different positions in the high direction of the cylindrical polishing pad semi-finished product, or when the cylindrical polishing pad semi-finished product is formed by In the transverse die casting method, the at least two regions of different hole densities are respectively distributed in the semi-finished product of the cylindrical polishing pad Directions different angular position. 如申請專利範圍第10項所述之研磨墊的製造方法,其中該切割機構包括固定式切刀、往復移動式切刀、往復移動式線鋸、循環移動式切刀、循環移動式線鋸、或雷射切割工具。 The manufacturing method of the polishing pad according to claim 10, wherein the cutting mechanism comprises a fixed cutter, a reciprocating cutter, a reciprocating wire saw, a circulating movable cutter, a circulating mobile wire saw, Or laser cutting tools. 如申請專利範圍第10項所述之研磨墊的製造方法,其中該切割裝置更包括一轉動機構,用於承載該研磨墊半成品。 The method of manufacturing a polishing pad according to claim 10, wherein the cutting device further comprises a rotating mechanism for carrying the polishing pad blank. 如申請專利範圍第12項所述之研磨墊的製造方法,其中轉動機構係為一轉動軸。 The method of manufacturing a polishing pad according to claim 12, wherein the rotating mechanism is a rotating shaft. 如申請專利範圍第10項所述之研磨墊的製造方法,其中該研磨層或襯墊層具有一第一孔洞群以及一第二孔洞群,該第一孔洞群與該第二孔洞群交錯排列分佈於該研磨層或襯墊層,其中該第一孔洞群的孔洞數大於該第二孔洞群的孔洞數,或該第一孔洞群的平均孔徑大於該第二孔洞群的平均孔徑。 The method for manufacturing a polishing pad according to claim 10, wherein the polishing layer or the liner layer has a first hole group and a second hole group, and the first hole group and the second hole group are staggered. Distributed in the polishing layer or the liner layer, wherein the number of holes of the first hole group is larger than the number of holes of the second hole group, or the average hole diameter of the first hole group is larger than the average hole diameter of the second hole group. 如申請專利範圍第10項所述之研磨墊的製造方法,其中該切割裝置更包含有一加熱機構,用於加熱該研磨墊半成品。 The method of manufacturing a polishing pad according to claim 10, wherein the cutting device further comprises a heating mechanism for heating the polishing pad blank. 如申請專利範圍第10項所述之研磨墊的製造方法,其中該切割裝置更包括一輸出機構,用於輸出已完成切割之該研磨墊半成品。 The manufacturing method of the polishing pad according to claim 10, wherein the cutting device further comprises an output mechanism for outputting the polishing pad semi-finished product that has been cut. 如申請專利範圍第16項所述之研磨墊的製造方法,其中該輸出機構為一輸出平台或一捲收裝置。 The method for manufacturing a polishing pad according to claim 16, wherein the output mechanism is an output platform or a winding device. 如申請專利範圍第10項所述之研磨墊的製造方法,其中該切割裝置更包括一磨利機構,用於磨利該切割機構。 The method of manufacturing a polishing pad according to claim 10, wherein the cutting device further comprises a sharpening mechanism for sharpening the cutting mechanism. 如申請專利範圍第18項所述之研磨墊的製造方法,其中該磨利機構為一砂輪。 The method of manufacturing a polishing pad according to claim 18, wherein the grinding mechanism is a grinding wheel. 如申請專利範圍第10項所述之研磨墊的製造方法,其中更包含一加熱步驟,以提高該研磨墊半成品的溫度。 The method for manufacturing a polishing pad according to claim 10, further comprising a heating step to increase the temperature of the polishing pad blank.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6634932B2 (en) * 1998-05-29 2003-10-21 Micron Technology, Inc. Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates
TW200621425A (en) * 2004-09-01 2006-07-01 Cabot Microelectronics Corp Polishing pad with microporous regions
TW201225169A (en) * 2010-10-15 2012-06-16 Nexplanar Corp Polishing pad with multi-modal distribution of pore diameters

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6634932B2 (en) * 1998-05-29 2003-10-21 Micron Technology, Inc. Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates
TW200621425A (en) * 2004-09-01 2006-07-01 Cabot Microelectronics Corp Polishing pad with microporous regions
TW201225169A (en) * 2010-10-15 2012-06-16 Nexplanar Corp Polishing pad with multi-modal distribution of pore diameters

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