TWI608517B - Process chamber and apparatus for providing plasma to a process chamber - Google Patents

Description

Processing chamber and means for providing plasma to the processing chamber

Embodiments of the invention are generally associated with semiconductor processing equipment.

Some conventional substrate processing chambers use a plasma source having one or more electrodes that are configured to form a plasma from the process gas prior to introduction of the process gas into the processing chamber. However, the inventors have observed that in such a plasma source, an arc can occur between the grounded gas supply line and the electrically charged electrode. The inventors have observed that such an arc typically produces a plasma discharge (e.g., parasitic plasma). Plasma discharge can result in damage to process chamber components (e.g., gas inlets, electrodes, or the like) and/or particle formation. Within the processing chamber, the particles may be located on the substrate within the processing chamber during processing, thereby producing undesirable processing results.

Accordingly, the inventors provide improved apparatus for providing plasma to a processing chamber.

Embodiments of a device for providing plasma to a processing chamber are provided. In some embodiments, a device can include: a first ground plate, an electrode, The electrode is disposed under the first ground plate and spaced apart from the first ground plate by a first electrical insulator disposed between the first ground plate and the electrode to define a relationship between the first ground plate and the electrode a first grounding plate; a second grounding plate, the second grounding plate is disposed under the electrode and spaced apart from the electrode by a second electrical insulator disposed between the electrode and the second grounding plate to define the electrode and the electrode a second gap between the second ground plates; a first gas inlet, the first gas inlet provides a process gas to the first gap; a plurality of through holes, the through holes are configured to pass The first gap is coupled to the second gap; and a plurality of first gas outlet openings, the first gas outlet openings are configured to pass the second gap fluid through the second ground plate The ground is coupled to an area below the second plate.

In some embodiments, a processing chamber may include: a chamber body having a substrate holder, the substrate holder being disposed in an inner volume of the processing chamber; a cover, the cover The body is disposed on the top of the chamber body, and the cover body comprises a plasma source. The plasma source includes: a first ground plate; an electrode disposed under the first ground plate and spaced apart from the first ground plate by a first electrical insulator to define the first ground plate and a first gap between the electrodes; a second ground plate, the second ground plate is disposed under the electrode and spaced apart from the electrode by a second electrical insulator to define the electrode and the second ground plate a second gap; a first gas inlet, the first gas inlet provides a processing gas to the first gap; a plurality of through holes, the through holes are disposed to pass through the electrode and a first gap is coupled to the second gap; and a plurality of first gas outlet openings, the first gas outlet openings are configured to pass the second ground plate The second gap is fluidly coupled to a region below the second sheet.

Other and further embodiments of the invention are described below.

100‧‧‧Device (plasma source)

102‧‧‧First ground plate

104‧‧‧Second ground plate

106‧‧‧Electrode

108‧‧‧ gas outlet hole

110‧‧‧ arrow

112‧‧‧through hole

114‧‧‧First gap

116‧‧‧Second gap

118‧‧‧First electrical insulator

119‧‧‧Power supply

120‧‧‧ gas inlet

121‧‧‧Second electrical insulator

122‧‧‧Common ground

124‧‧‧ upper cone

126‧‧‧ Lower cone

202‧‧‧Conical cavity

204‧‧‧Conical cavity

208‧‧‧ inside surface

210‧‧‧ inside surface

302‧‧‧ Third ground plate

306‧‧‧ third gap

308‧‧‧ gas inlet

309‧‧‧Electrical ring parts

310‧‧‧ gas source

400‧‧‧Processing chamber

410‧‧‧ chamber body

412‧‧‧Substrate support

416‧‧‧Substrate

422‧‧ ‧ treatment volume

480‧‧‧vacuum pump

Embodiments of the present invention, which are discussed in more detail below and briefly summarized above, may be understood by reference to the exemplary embodiments of the invention illustrated in the drawings. It is to be understood, however, that the appended claims

In accordance with some embodiments of the present invention, Figure 1 illustrates a schematic side view of an apparatus for providing plasma to a processing chamber.

In accordance with some embodiments of the present invention, FIG. 2 illustrates a schematic side view of an apparatus for providing plasma to a processing chamber.

In accordance with some embodiments of the present invention, FIG. 3 illustrates a schematic side view of an apparatus for providing plasma to a processing chamber.

In accordance with some embodiments of the present invention, FIG. 4 illustrates a processing chamber suitable for use with a device for providing plasma to a processing chamber.

To promote understanding, the same element symbols have been used wherever possible to refer to the same elements in the drawings. The drawings are not drawn to dimensions and may be simplified for clarity. It will be appreciated that elements and features of an embodiment may be beneficially incorporated in other embodiments without further recitation.

Embodiments are provided for providing a plasma to a processing chamber that reduces or eliminates the formation of voltage arcs or parasitic plasma.

The inventors observed that conventional plasma sources typically utilize a grounded gas supply. The line provides a process gas to the electrically charged electrode. However, due to the voltage drop between the electrode and the gas supply line, an arc can occur at a point near the gas supply line that feeds the process gas to an electrode. Such an arc can cause a plasma discharge (such as a parasitic plasma) that can cause damage to the processing chamber components (such as gas inlets, electrodes, or the like) and/or cause particles to form within the processing chamber. The particles may be located on the substrate within the processing chamber during processing, thereby producing undesirable processing results.

Thus, in some embodiments, as shown in FIG. 1, the apparatus for providing plasma to a processing chamber (plasma source) 100 can generally include a first ground plate 102, a second ground plate 104, and an electrode 106. . In some embodiments, the first base plate 102 and the second ground plate 104 can be coupled to the common ground 122.

The first ground plate 102 and the second ground plate 104 can be fabricated from any process compatible conductive material. For example, in some embodiments, the first ground plate 102 and/or the second ground plate 104 may be fabricated from a metal or metal alloy, such as, for example, aluminum, nickel coated aluminum, steel, stainless steel, iron, Nickel, chromium, alloys of the above, combinations of the above, or the like. In some embodiments, each of the first ground plate 102 and the second ground plate 104 can be fabricated from the same metal, or in some embodiments, from a different metal.

The first air chamber is disposed between the first ground plate 102 and the electrode 106. For example, in some embodiments, the first electrical insulator 118 can be disposed between the first ground plate 102 and the electrode 106 to form a first gap 114 between the first ground plate 102 and the electrode 106 ( Such as the first air chamber). The gas inlet 120 may be disposed through the first ground plate 102 to provide one or more The process gas is multi-processed to a first gap 114 of the plasma source 100. The first gap 114 provides a cavity to allow ignition of the process gas to form a plasma.

The electrode 106 includes a plurality of vias 112 that fluidly couple the first gap 114 to a second plenum disposed between the electrode 106 and the second ground plate 104 to allow for formation in the first gap 114. The process gas and/or plasma passes through the electrode 106 and enters the second plenum. For example, in some embodiments, the second electrical insulator 121 can be disposed between the electrode 106 and the second ground plate 104 to form a second gap 116 between the electrode 106 and the second ground plate 104 (eg, Second air chamber). The second ground plate 104 includes one or more gas outlet openings 108 (e.g., through holes) to allow excited species (e.g., free radicals) to be generated in the plasma, such as from the plasma source 100 (indicated by arrow 110). The processing volume of the processing chamber. The second gap 116 provides a second cavity to allow ignition of the process gas to form a plasma and further allows plasma buildup to penetrate the gas outlet port 108 to promote diffusion of the plasma species. In contrast to conventional plasma sources that use a single cavity to form a plasma, the inventors believe that providing a plurality of cavities (such as first gap 114 and second gap 116) will allow plasma to be formed in each cavity. Thereby, multiple excitation phases of the plasma are provided to aid in the production of enhanced free radicals.

The first electrical insulator 118 and the second electrical insulator 121 electrically isolate the first ground plate 102 and the second ground plate 104 from the electrode 106. The first electrical insulator 118 and the second electrical insulator 121 may comprise any electrically insulating material that is compatible with the process. For example, in some embodiments, the first electrical insulator 118 and the second electrical insulator 121 may be made of quartz (SiO ₂ ), sintered ceramic such as aluminum oxide (Al ₂ O ₃ ) or tantalum nitride (SiN). Or made of single crystal sapphire (Al ₂ O ₃ ).

The inventors have observed that by providing the first ground plate 102 and the second ground plate 104, the potential at the gas inlet 120 and the gas outlet opening 108 is reduced or eliminated, thereby advantageously eliminating formation at the gas inlet 120. An electric arc and/or parasitic plasma near the gas outlet opening 108. By eliminating the formation of arcs and parasitic plasma, the plasma induced damage and particle formation of the plasma source discussed above can be reduced or eliminated.

Power supply 119 can be coupled to electrode 106 to provide power to the electrodes to facilitate ignition of the gas to form a plasma. The power supply 119 can be any type of power supply suitable to provide sufficient power to ignite a gas, such as, for example, a radio frequency power supply. In some embodiments, power supply 119 can be a radio frequency power supply, and power supply 119 can provide radio frequency power from a frequency in the range of less than 100 kilohertz (kHz) to about 100 megahertz (MHz).

Electrode 106 can be fabricated from any electrically conductive material that is compatible with the process. For example, in some embodiments, the electrodes can be fabricated from metals or metal alloys such as aluminum, steel, stainless steel, iron, nickel, chromium, alloys of the foregoing, combinations of the foregoing, or the like.

In some embodiments, the plurality of vias 112 can include one or more conical shapes. For example, in some embodiments, each of the plurality of through holes 112 includes an upper cone 124, as shown in FIG. 1, the upper cone 124 is adjacent the upper cone 124 and the lower cone 126 The position of a vertex of each of them is coupled to the lower cone 126. The inventors have observed that a conical through hole 112 can help to ignite the gas more uniformly, thereby producing a uniform plasma. In some embodiments, the conical through holes 112 can be offset, for example, by the first gap 114 and / Or the inconsistency of plasma ignition caused by the uneven size of the second gap 116, and the uneven size of the first gap 114 and/or the second gap 116 is due to the first ground plate 102 or the second ground plate 104 being non-parallel Caused by the electrode 106. Furthermore, the inventors have observed that conical through holes 112 can help to ignite higher plasma densities, thereby creating more free radicals within the plasma.

Alternatively, or in combination, for example, as illustrated in FIG. 2, in some embodiments, at least one of the first ground plate 102 or the second base plate 104 can have a plurality of conical cavities 202. 204, the conical cavities 202, 204 are formed on the inner surface 208, 210 of the first ground plate 102 and the second base plate 104. In such an embodiment, the gas outlet opening 108 can be fluidly coupled to the conical cavity 204 formed in the second ground plate 104. If conical cavities 202, 204 are present, the conical cavities 202, 204 perform the same function as the conical through holes 112 as described above. In such an embodiment, the through hole 112 of the electrode 106 may be, for example, a cylindrical shape as shown in Fig. 2, or a tapered shape as shown in Fig. 1.

Referring to FIG. 3, in some embodiments, the plasma source 100 includes a third ground plate 302, and the third base plate 302 is coupled to the second ground plate 104. The third ground plate 302 may be fabricated from a metal or metal alloy, such as, for example, aluminum, nickel-coated aluminum, steel, stainless steel, iron, nickel, chromium, alloys of the foregoing, combinations of the foregoing, or the like . In some embodiments, the third ground plate 302 can be achieved by being separately coupled to the common ground 122 (as indicated by the dashed line in 311) or by electrically coupling to the second ground plate 104. For example, in some embodiments, as shown in FIG. 3, the third base plate 302 is permeable to the second ground plate 104 and the third ground plate. The conductive ring member 309 between the 302 is electrically coupled to the second ground plate 104. Although described as a separate component, the conductive ring member 309 can be integrally formed with either the second ground plate 104 or the third ground plate 302.

In some embodiments, the third base plate 302 can be coupled to the second ground plate 104 such that a third gap 306 (eg, a third air chamber) can be formed between the second ground plate 104 and the third ground plate 302. A gas inlet 308, such as a third gas inlet, can be coupled to the third gap 306 to provide a process gas, such as provided by gas source 310, to the third gap 306 to aid in the desired processing. The process gas provided by the gas inlet 308 to the third gap 306 can be any type of gas required for the desired treatment, such as, for example, a carrier gas, a purge gas, a purge gas, a reactive gas, or the like. . Due to the position of the third gap 306 relative to the electrode 106, the gas provided to the third gap 306 through the gas inlet 308 will be advantageously energized into the plasma state through the power supply 119. As noted above, in some embodiments, the concentration of active or energized species flowing from the plasma source into the processing chamber can be further controlled by controlling the amount of gas added through the gas inlet 308.

The third ground plate 302 includes a plurality of gas outlet openings 304 to allow plasma and/or process gases to flow, for example, from the plasma source 100 (indicated by the arrow 110) to the processing chamber. In some embodiments, the gas outlet opening 304 of the third ground plate 302 can have a smaller diameter than the gas outlet opening 108 of the second ground plate 104. The gas outlet opening 304 provides a smaller outflow that allows the third ground plate 302 to act as a filter to prevent undesirable components of the plasma from entering the chamber. For example, in some embodiments, the gas outlet opening 304 of the third ground plate 302 prevents damage to the substrate. Charged ions enter the processing chamber allowing neutral radicals to pass through the chamber. In some embodiments, the gas outlet opening 304 of the third ground plate 302 can have the same or a larger diameter than the gas outlet opening 108 of the second ground plate 104.

The plasma source 100 can be an independently operated device configured to generate a plasma that is subsequently provided to the processing chamber (eg, a remote plasma source), or in some embodiments, the plasma source 100 can be integrated To process the chamber. For example, the plasma source 100 can be integrated into a processing chamber cover, as shown, for example, in FIG.

Referring to Figure 4, the processing chamber 400 can be any processing chamber suitable for plasma enhanced semiconductor processing, such as, for example, configured to perform plasma assisted chemical vapor deposition (CVD) or atomic layer deposition (ALD). Processing chamber. The exemplary processing chamber may include an ENDURA®, PRODUCER® or CENTURA® workbench processing chamber, or other processing chamber, available to Applied Materials, Inc. of Santa Clara, California. Calif.) Acquired. Other suitable processing chambers can be similarly used.

In some embodiments, the processing chamber 400 can generally include a chamber body 410 and a substrate support 412 disposed within the chamber body 410. In some embodiments, the plasma source 100 of the present invention is disposed atop the chamber body and integrated with the chamber cover or a portion thereof, or as a chamber cover or a portion thereof.

The substrate support 412 is configured to support one or more substrates 416 in a processing volume 422 defined by the chamber body 410 and the plasma source 100 and/or the processing chamber cover. In some embodiments, the substrate support 412 can include a heater 420 adapted to heat one or more substrates 416 or be adapted to have one or more substrates 416 The temperature controls the fluid cooling channels (not shown) at the temperatures required to perform the process.

In some embodiments, the processing chamber 400 includes a vacuum pump 480 to pump the volume 422 to obtain and/or maintain a desired pressure within the processing volume 422. During processing, the vacuum pump 480 provides a negative pressure relative to the second gap 116 of the plasma source 100 within the processing volume 422, thus allowing species within the second gap 116 to flow to the processing volume 422.

Accordingly, embodiments are provided for providing a plasma to a processing chamber that reduces or eliminates the formation of voltage arcs or parasitic plasma. While the foregoing is a description of the embodiments of the present invention, other embodiments of the invention may be devised without departing from the scope of the invention.

100‧‧‧Device (plasma source)

102‧‧‧First ground plate

104‧‧‧Second ground plate

106‧‧‧Electrode

108‧‧‧ gas outlet hole

110‧‧‧ arrow

112‧‧‧through hole

114‧‧‧First gap

116‧‧‧Second gap

118‧‧‧First electrical insulator

119‧‧‧Power supply

120‧‧‧ gas inlet

121‧‧‧Second electrical insulator

122‧‧‧Common ground

124‧‧‧ upper cone

126‧‧‧ Lower cone

Claims (18)

A device for providing a plasma to a processing chamber, the device comprising: a first grounding plate; an electrode disposed under the first grounding plate and spaced apart from the first grounding plate by a first electricity The insulating insulator defines a first plasma generating gap between the first grounding plate and the electrode; and a second grounding plate disposed under the electrode and spaced apart from the electrode a second electrical insulator to define a second plasma between the electrode and the second ground plate to create a gap; a gas inlet, the gas inlet extends through the first ground plate to the first The plasma creates a gap to provide a process gas to the first plasma to create a gap; a plurality of through holes disposed through the electrode and coupling the first plasma generating gap to the second plasma Creating a gap, wherein each of the through holes has a first opening at an uppermost surface of the electrode adjacent to the first plasma generating gap, and a gap is formed adjacent to the second plasma a lowermost surface of the electrode a second opening is terminated, and wherein each of the plurality of through holes of the electrode comprises an upper cone coupled to the oppositely facing lower cone, wherein the upper cone and the upper cone The lower cones are coaxial and intersect to define a passage for coupling the first plasma generating gap to the second plasma generating gap; and a plurality of first gas outlet openings, the first gas out The port hole is configured to generate a gap between the second plasma through the second ground plate Fluidly coupled to an area below the second ground plate. The device of claim 1, wherein the first grounding plate and the second grounding plate are electrically coupled to a ground. The device of claim 1, wherein the device is integrated into a cover of the processing chamber. The device of claim 1, wherein the first ground plate comprises a gas inlet fluidly coupled to the first plasma generating gap to provide a process gas to the first electricity The slurry creates a gap. The device of any one of claims 1 to 4, wherein at least one of the first ground plate and the second ground plate has a conical cavity formed in the first ground The inner surface of each side of the sheet and the second ground sheet. The device of any one of claims 1 to 4, further comprising a third ground plate coupled to the second ground plate, the third ground plate having a plurality of second gas outlets Hole. The device of claim 6, wherein the plurality of second gas outlet openings have a diameter that is smaller than a diameter of the plurality of first gas outlet openings. The device of claim 6, further comprising: a gap disposed between the second ground plate and the third ground plate. The device of claim 8 further comprising: a gas inlet fluidly coupled to the gap to provide a process gas to the gap. The device of claim 6, wherein the third ground plate is electrically coupled to a ground. a processing chamber comprising: a chamber body having a substrate holder, the substrate holder being disposed in an inner volume of the processing chamber; a cover body, the cover body being disposed On the top of the chamber body, the cover body comprises a plasma source, wherein the plasma source comprises: a first ground plate; an electrode disposed under the first ground plate and with the first ground plate Separating a first electrical insulator to define a first plasma gap between the first ground plate and the electrode; and a second ground plate disposed under the electrode and The electrode is separated by a second electrical insulator to define a second plasma gap between the electrode and the second ground plate; a gas inlet port extending through the first ground plate to the first plasma generating gap to provide a process gas to the first plasma generating gap; a plurality of through holes, the through holes Arranging to pass the electrode and coupling the first plasma generating gap to the second plasma generating gap, wherein each of the through holes is adjacent to the electrode of the first plasma generating gap a first opening is formed at an uppermost surface, and a second opening is terminated at a lowermost surface of the electrode adjacent to the second plasma generating gap, and wherein the plurality of through holes of the electrode Each of the upper cones is coupled to an oppositely facing lower cone, wherein the upper cone is coaxial with and intersects the lower cone to define a first plasma generation a gap is coupled to a channel of the second plasma generating gap; and a plurality of first gas outlet openings, the first gas outlet openings are configured to generate a gap between the second plasma through the second ground plate Fluidly coupled to the second ground plate Of a region. The processing chamber of claim 11, wherein the first grounding plate and the second grounding plate are electrically coupled to a ground. The processing chamber of claim 11, wherein the first ground plate comprises a gas inlet fluidly coupled to the first plasma generating gap to provide a process gas to the first A plasma creates a gap. The processing chamber of any one of claims 11 to 13, wherein at least one of the first ground plate and the second ground plate has a conical cavity formed in the first a ground plate and an inner surface of each of the second ground plates. The processing chamber of any one of claims 11 to 13 further comprising a third grounding plate coupled to the second grounding plate, the third grounding plate having a plurality of second gases Vent hole. The processing chamber of claim 15, wherein the plurality of second gas outlet openings have a diameter that is smaller than a diameter of the plurality of first gas outlet openings. The processing chamber of claim 15 further comprising: a gap disposed between the second ground plate and the third ground plate. The processing chamber of claim 17 further comprising: a gas inlet fluidly coupled to the gap to provide a process gas to the gap.