TWI600738B - Wafer resin film formation sheet - Google Patents

Description

Sheet for resin film formation for wafer

The present invention relates to a sheet for forming a resin film for a wafer which can efficiently form a resin film having a high thermal diffusivity on a surface of a semiconductor wafer and has a high reliability.

In recent years, the manufacture of semiconductor devices has been carried out by a so-called "face down" mounting method. In the flip chip method, a semiconductor wafer (hereinafter also simply referred to as a "wafer") having electrodes such as bumps on a circuit surface is used, and the electrodes and the substrate are bonded. Therefore, the circuit surface of the wafer may expose the surface on the opposite side (the inner surface of the wafer).

The inner surface of the wafer thus formed is protected by an organic film. Conventionally, a wafer having a protective film made of the organic film is obtained by applying a liquid resin to a wafer surface by a spin coating method, drying and curing the wafer, and cutting the wafer and the protective film. However, the thickness of the protective film thus formed is insufficient in accuracy, so the yield of the article is low.

In order to solve the above problem, a sheet for forming a protective film for a wafer having a support sheet and a protective film forming layer formed of a heat or energy ray-curable component and an adhesive polymer component formed on the support sheet has been disclosed (Patent Document 1) ).

The semiconductor wafer fabricated in a large diameter state is also moved to the bonding step of the next step after the dicing device (semiconductor wafer) is diced. Step. At this time, the semiconductor wafer is attached to the adhesive sheet in advance, and after each stage of cutting, washing, drying, expanding, and picking, the semiconductor wafer is transferred to the bonding step of the next step.

Among these steps, since the steps of the take-out phase and the bonding step are simplified, there are various proposals for the die for die-bonding which have both the wafer fixing function and the dicing bonding function (see, for example, Patent Document 2). The adhesive sheet disclosed in Patent Document 2 can perform so-called direct die bonding, and the coating stage of the die followed by the adhesive can be omitted. For example, by using the above-mentioned adhesive sheet, a semiconductor wafer having an adhesive layer on its inner surface can be obtained, so that the organic substrate and the wafer, the lead frame and the wafer, and the wafer and the wafer can be directly bonded to each other. Such a bonding sheet, the adhesive layer has fluidity to achieve a wafer fixing function and a die attach function, and has a support sheet and is formed on the support sheet by a heat or energy ray hardening component and an adhesive and a polymer component. The layer of the adhesive.

In the case where a wafer is used in a flip-chip type in which a wafer is bonded to a wafer bump (electrode) by a wafer supporting portion, a bump layer is attached to the bump forming surface, that is, the wafer surface. , for die bonding.

With the increase in density of semiconductor devices in recent years and the increase in the manufacturing process of semiconductor devices, heat generation in semiconductor devices has become a problem. The semiconductor device is deformed by heat generation of the semiconductor device, causing failure and damage, and the calculation speed of the semiconductor device is lowered or the operation error is caused, so that the reliability of the semiconductor device is lowered. Therefore, in a high-performance semiconductor device, in order to obtain efficient heat dissipation characteristics, a resin having a good thermal diffusivity is used for protecting a resin film such as a film formation layer or an adhesive layer. For example, Patent Document 3 discloses that a magnetic field is provided to a film composition containing boron nitride powder to match boron nitride powder in the composition. The thermally conductive, cured film in a certain direction follows the film.

Prior technical literature

Patent literature

Patent Document 1: JP-A-2002-280329

Patent Document 2: JP-A-2007-314603

Patent Document 3: JP-A-2002-69392

However, the thermally conductive adhesive film formed by using the film composition described in Patent Document 3 has a step of providing a magnetic field in the above-described manufacturing process, and the manufacturing process is complicated. Further, the embodiment of Patent Document 3 discloses that a resin film is formed using boron nitride powder having an average particle diameter of 1 to 2 μm, and the composition for a resin film forming layer is made thick by a small particle diameter. When the composition for a resin film forming layer is viscous, the coating suitability of the composition for a resin film forming layer is lowered, and it is difficult to form a smooth resin film. On the other hand, in order to prevent the addition of the composition of the resin film forming layer and reduce the amount of addition of the boron nitride powder, the high thermal diffusivity of the resin film cannot be obtained. Therefore, a means for increasing the thermal diffusivity by a simple manufacturing method without increasing the amount of boron nitride powder added is desirable.

In view of the above, the present invention has an object of providing heat dissipation characteristics of the obtained semiconductor device without causing a special increase in the number of steps of the semiconductor wafer or the wafer during the manufacturing process of the semiconductor device.

As a result of intensive studies aimed at solving the above problems, the inventors of the present invention have conceived that the thermal diffusivity of a resin film formed on either side of a semiconductor wafer is The present invention has been accomplished by setting a range to improve the heat release characteristics of a semiconductor device.

The present invention encompasses the following gist.

[1] A sheet for forming a resin film for a wafer, comprising: a support sheet and a resin film forming layer formed on the support sheet, the resin film forming layer comprising a binder polymer component (A), a curable component (B), And the inorganic filler (C), the resin film forming layer has a thermal diffusivity of 2 × 10 ^-6 m ² /s or more.

[2] The sheet for forming a resin film for a wafer according to the above [1], wherein the resin film forming layer contains 30 to 60% by mass of the inorganic filler (C).

[3] The sheet for forming a resin film for a wafer according to the above [1], wherein the inorganic filler (C) comprises an anisotropic particle having an aspect ratio of 5 or more and an average particle diameter of 20 μm or less (C1). And the interference particle (C2) having an average particle diameter of more than 20 μm.

[4] The sheet for forming a resin film for a wafer according to the above [3], wherein the anisotropically shaped particles (C1) have a thermal conductivity of 60 to 400 W/m in the long axis direction. K.

[5] The sheet for forming a resin film for a wafer according to the above [4], wherein the anisotropically shaped particles (C1) are nitride particles.

The sheet for forming a resin film for a wafer according to any one of the above aspects, wherein the particle diameter of the barrier particle (C2) is 0.6 to 0.95 times the thickness of the resin film formation layer.

[7] The sheet for forming a resin film for a wafer according to any one of the above [3], wherein the weight ratio of the anisotropically shaped particles (C1) to the barrier particles (C2) is 5:1. 1:5.

[8] The sheet for forming a resin film for a wafer according to any one of the above [1], wherein the thickness of the resin film forming layer is 20 to 60 μm.

The sheet for forming a resin film for a wafer according to any one of the above aspects, wherein the resin film forming layer functions as a film-like adhesive for fixing a semiconductor wafer to a substrate or another semiconductor wafer. .

[10] The sheet for forming a resin film for a wafer according to any one of the above [1], wherein the resin mold forming layer is a protective film of a semiconductor wafer or a wafer.

[11] A sheet for forming a resin film for a wafer according to any one of the above [1] to [10].

When a resin film is formed on any surface of a semiconductor wafer, the sheet for forming a resin film for a wafer according to the present invention can be used to improve the reliability of the obtained semiconductor device without applying a semiconductor wafer or a wafer.

The following description of the invention also includes the best mode and further details. The sheet for forming a resin film for a wafer according to the present invention has a support sheet and a resin film forming layer formed on the support sheet.

(resin film forming layer)

The resin film forming layer contains the binder polymer component (A), the curable component (B), and the inorganic filler (C).

(A) Adhesive polymer composition

In order to impart sufficient adhesiveness and film forming property (sheet formability) to the resin film forming layer, the binder polymer component (A) is used. As the adhesive polymer component (A), a conventional acrylate polymer, a polyester resin, a urethane resin, an urethane acrylate tree can be used. A fat, an anthrone resin, a rubber-based polymer, or the like.

The weight average molecular weight (Mw) of the binder polymer component (A) is preferably from 10,000 to 2,000,000, more preferably from 100,000 to 1.5 million. When the weight average molecular weight of the binder polymer component (A) is too low, the adhesion between the resin film forming layer and the support sheet is increased, and the transfer of the resin film forming layer is poor, and when the resin film forming layer is too high, the adhesion of the resin film forming layer is excessive. It is not transferred to a wafer or the like, or is peeled off from a resin film such as a wafer after transfer.

The acrylate polymer is preferably used as the binder polymer component (A). The glass transition temperature (Tg) of the acrylate polymer is preferably -60 to 50 ° C, more preferably -50 to 40 ° C, still more preferably -40 to 30 ° C. When the glass transition temperature of the acrylate polymer is too low, the peeling force of the resin film forming layer and the support sheet becomes large, and the transfer failure of the resin film forming layer is caused. When the glass transition temperature is too high, the adhesion of the resin film forming layer is lowered, and the transfer property cannot be changed. It is printed on a wafer or the like, or is peeled off from a resin film such as a wafer after transfer.

A monomer constituting the above acrylate polymer, for example, a (meth) acrylate monomer or a derivative thereof. For example, an alkyl (meth) acrylate having an alkyl group having 1 to 18 carbon atoms, specifically, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, (methyl) Butyl acrylate, 2-ethylhexyl (meth) acrylate, etc.; (meth) acrylate having a cyclic structure, specifically, for example, cycloalkyl (meth) acrylate, benzyl (meth) acrylate, Isobornyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentenyloxyethyl (meth)acrylate, (meth)acrylic acid Amine or the like; a (meth) acrylate having a hydroxyl group, specifically, for example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, etc.; and other (meth)acrylic acid having, for example, an epoxy group Glycidyl ester and the like. Among these, an acrylate polymer obtained by polymerizing a monomer having a hydroxyl group is It is preferable that the compatibility with the curable component (B) to be described later is good. Further, the above acrylate polymer may be copolymerized with acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene or the like.

The binder polymer component (A) can also be formulated with a thermoplastic resin. The thermoplastic resin is a polymer other than the acrylate polymer, and is blended in order to maintain the flexibility of the resin film after curing. The thermoplastic resin preferably has a weight average molecular weight of 1,000 to 100,000, more preferably 3,000 to 80,000. When the resin film forming layer is transferred to the semiconductor wafer or the wafer by the thermoplastic resin containing the above range, the interlayer peeling between the support sheet and the resin film forming layer is facilitated, and the resin film forming layer follows the transfer surface to suppress voids ( Void) and so on.

The glass transition temperature of the thermoplastic resin is preferably from -30 to 150 ° C, more preferably from -20 to 120 ° C. When the glass transition temperature of the thermoplastic resin is too low, the peeling force of the resin film forming layer and the support sheet becomes large, causing poor transfer of the resin film forming layer, and when it is too high, the adhesion between the resin film forming layer and the wafer is feared. insufficient.

Thermoplastic resins such as polyester resins, urethane resins, urethane acrylate resins, phenol resins, fluorenone resins, polybutene, polybutadiene, polystyrene, and the like. These may be used alone or in combination of two or more.

In the case of containing a thermoplastic resin, it is usually contained in an amount of from 1 to 60 parts by mass, preferably from 1 to 30 parts by mass, based on 100 parts by mass of the total amount of the binder polymer component (A). The above effects can be obtained by the content of the thermoplastic resin in the above range.

Further, as the binder polymer component (A), a polymer having an energy ray-polymerizable group in the side chain (energy ray-curable polymer) can also be used. Energy line hardening The compound has both the function of the binder polymer component (A) and the function of the curable component (B) described later. The energy ray polymerizable group is preferably the same as the energy ray polymerizable group contained in the energy ray polymerizable compound to be described later. The polymer having an energy ray polymerizable group in the side chain is prepared, for example, by reacting a polymer having a reactive functional group X in a side chain with a low molecular compound having a functional group Y and an energy ray polymerizable group reactive with the reactive functional group X. Polymer.

(B) hardening ingredients

As the curable component (B), a thermosetting component, a thermosetting agent or an energy ray polymerizable compound can be used. Combinations of these can also be used. The thermosetting component is preferably an epoxy resin, for example.

A conventional epoxy resin can be used for the epoxy resin. The epoxy resin is specifically, for example, a polyfunctional epoxy resin, a bisphenol compound, bisphenol A diglycidyl ether or a hydride thereof, o-cresol formaldehyde epoxy resin, dicyclopentadiene epoxy resin, bisphenol ring An epoxy resin, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a phenylene structure type epoxy resin, or the like, and an epoxy compound having a bifunctional group or more in the molecule. These may be used alone or in combination of two or more.

When the thermosetting component and the thermosetting agent are used as the curable component (B), the resin film forming layer preferably contains the thermosetting component 1 to 100 parts by mass of the binder polymer component (A). 1500 mass parts, more preferably 3~1200 mass parts. When the content of the thermosetting component is less than 1 part by mass, sufficient adhesion cannot be obtained. When the content of the thermosetting component is more than 1,500 parts, the peeling force of the resin film forming layer and the support sheet is increased, and the resin film forming layer is poorly transferred.

The heat hardener acts as a thermosetting component, particularly as a hardener for epoxy resins. A preferred thermal hardener has, for example, two in one molecule A compound of the above functional group reactive with an epoxy group. Such a functional group is, for example, a phenolic hydroxyl group, an alcoholic hydroxyl group, an amine group, a carboxyl group, an acid anhydride or the like. Among these, for example, a phenolic hydroxyl group, an amine group, an acid anhydride or the like is preferable, and a phenolic hydroxyl group or an amine group is more preferable.

Specific examples of the phenolic curing agent include polyfunctional phenol resins, bisphenols, novolac resins, dicyclopentadiene phenol resins, neophenolic phenol resins, and aralkyl phenol resins. Specific examples of the amine hardener are, for example, DICY (dicyandiamide). These may be used alone or in combination of two or more.

The content of the thermosetting agent is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, per 100 parts by mass of the thermosetting component. When the content of the thermal curing agent is small, the adhesion is insufficient to obtain the adhesiveness, and when the amount is too large, the moisture absorption rate of the resin film forming layer is improved, and the reliability of the semiconductor device is lowered.

The energy ray polymerizable compound contains an energy ray polymerizable group and is polymerized and cured upon irradiation with an energy ray such as an ultraviolet ray or an electron beam. The energy ray polymerizable compound is specifically, for example, trimethoxypropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4-butanediol diacrylate. 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy modified acrylate, polyether acrylate and itaconic acid An acrylate-based compound such as a polymer. These compounds have at least one polymerizable double bond in the molecule, and usually have a weight average molecular weight of from about 100 to 30,000, preferably from about 300 to 10,000. When the energy ray polymerizable compound is used as the curable component (B), the energy ray polymerizable compound preferably contains 1 to 1,500 parts by mass with respect to 100 parts by mass of the binder polymer component (A). More preferably contains 3 to 1200 parts.

(C) inorganic filler

The inorganic filler (C) is preferably one which can increase the thermal diffusivity of the resin film forming layer. By blending the inorganic filler (C) in the resin film forming layer to increase the thermal diffusivity, the heat generated by the semiconductor wafer semiconductor device to which the packaging resin film forming layer is attached can be efficiently diffused. Further, the thermal expansion coefficient in the resin film after curing can be adjusted, and the thermal expansion coefficient of the resin film after curing can be optimized for the attached body such as the semiconductor wafer, the frame frame, and the organic substrate, and the reliability of the semiconductor device can be improved. Further, the moisture absorption rate of the resin film after curing can be lowered, and the adhesion of the resin film can be maintained during heating, thereby improving the reliability of the semiconductor device. Further, the thermal diffusivity is a value obtained by dividing the thermal conductivity of the resin film by the product of the specific heat and the specific gravity of the resin film, and the larger the thermal diffusivity, the better the exothermic property.

The inorganic filler (C) is specifically, for example, cerium oxide (1.3 W/m.K.), lead oxide (54 W/m.K), manganese oxide (59 W/m.K), alumina (38 W/m.K), Particles such as titanium (21.9 W/m.K), tantalum carbide (100-350 W/m.K), boron nitride (30-200 W/m.K), spheroidized beads, single crystal fibers, and glass fibers Wait. The values in parentheses indicate the thermal conductivity.

The inorganic filler (C) preferably contains the anisotropically shaped particles (C1) and the hindering particles (C2). When only the anisotropically shaped particles (C1) are used as the inorganic filler (C), the isotropic shape particle (C1) stress and gravity are applied in the production process (for example, the coating stage) of the resin film forming layer to form the long axis direction thereof. The ratio of the particles of the anisotropic shape in which the width direction and the flow direction of the resin film forming layer are substantially the same increases, and it is difficult to obtain a resin film forming layer having an excellent thermal diffusivity. The anisotropically shaped particles exhibit a good thermal diffusivity in the direction of their long axes. Therefore, in the resin film forming layer, the proportion of the anisotropically shaped particles whose longitudinal direction is substantially the same as the thickness direction of the resin film forming layer is increased. In addition, heat generated in the semiconductor wafer is easily dissipated via the resin film forming layer. When the inorganic filler (C) is used in combination with the particles (C1) and the barrier particles (C2), the direction of the major axis of the anisotropic particles and the width direction of the resin film forming layer during the production process of the resin film forming layer are suppressed or The flow direction is substantially the same, and the ratio of the anisotropic particles whose longitudinal direction is substantially the same as the thickness direction of the resin film forming layer can be increased. As a result, a resin film forming layer having an excellent thermal diffusivity was obtained. This is because the presence of the barrier particles (C2) in the resin film formation layer and the presence of the anisotropically shaped particles (C1) on the interference particles (C2) are present, and the long axis direction of the particles of the anisotropic shape is formed. The thickness direction of the resin film forming layer is substantially the same. In the present invention, the direction of the major axis of the particles of the anisotropic shape is substantially the same as the thickness direction of the resin film forming layer. Specifically, the direction of the major axis of the particles of the anisotropic shape is in the thickness direction of the resin film forming layer. -45~45° range.

(C1) anisotropic shape particle

It is preferable that the anisotropically shaped particles (C1) have an anisotropy and have a shape having at least one selected from the group consisting of a plate shape, a needle shape, and a scale shape in a specific shape. Preferred isotropic shaped particles (C1) are, for example, nitride particles, and nitride particles are particles such as boron nitride, aluminum nitride, or tantalum nitride. Among these, boron nitride particles which are easy to obtain good thermal conductivity are preferred.

The average particle diameter of the anisotropically shaped particles (C1) is 20 μm or less, preferably 5 to 20 μm, more preferably 8 to 20 μm, and particularly preferably 10 to 15 μm. The average particle diameter of the anisotropically shaped particles (C1) is preferably smaller than the average particle diameter of the hindering particles (C2) described later. By adjusting the average particle diameter of the anisotropically shaped particles (C1) as described above, the thermal diffusivity and the film forming property of the resin film forming layer can be improved, and the filling ratio of the anisotropically shaped particles (C1) in the resin film forming layer can be improved. The average particle size of the anisotropically shaped particles (C1) is determined by electron microscopy The mirror has no selection of 20 anisotropically shaped particles (C1), and the long axis diameter is measured, and the number average particle diameter obtained by calculating the arithmetic mean is calculated.

The particle distribution (CV value) of the anisotropically shaped particles (C1) is preferably from 5 to 40%, more preferably from 10 to 30%. When the particle size distribution of the particles of the anisotropic shape (C1) is in the above range, the uniform thermal conductivity can be efficiently achieved. The CV value is a variation index of the particle size, and the larger the CV value, the larger the variation of the particle size. The smaller the CV value is, the smaller the particle diameter is, and the smaller the amount of particles entering the particle and the particle gap is, the less the inorganic filler (C) is more closely packed, and as a result, it is difficult to obtain a resin film forming layer having high thermal conductivity. On the other hand, when the CV value is large, the particle diameter of the inorganic filler (C) is larger than the thickness of the resin film forming layer after the film formation, and as a result, irregularities are formed on the surface of the resin film forming layer, and the adhesion of the resin film forming layer is deteriorated. Further, when the CV value is too large, it is difficult to obtain a thermally conductive composition having uniform properties. The particle distribution (CV value) of the particles of the anisotropic shape (C1) is observed by an electron microscope, and the major axis diameter is measured for 200 or more particles, and the standard deviation of the major axis diameter is calculated, and the average particle diameter is used to calculate (long axis diameter). The standard deviation) / (average particle size) was obtained.

The aspect ratio particle (C1) has an aspect ratio of 5 or more, preferably 5 to 30, more preferably 8 to 20, still more preferably 10 to 15. The path length ratio indicates the average value of the number of long axes (the average of the number of long axes) of the anisotropic shape particles (C1). The average value of the number of short axes and the average value of the number of long axes are photographed by an electron microscope, and there are 20 particles of the anisotropic shape which are not selected, and the short axis diameter and the long axis diameter are measured, and the arithmetic mean is calculated. Number average particle size. When the radial length ratio of the particles of the opposite shape (C1) is in the above range, the formation of the obstruction particles (C2) prevents the formation of the major axis direction of the anisotropic particles (C1) from being substantially the same as the width direction or the flow direction of the resin film formation layer. The anisotropically shaped particles (C1) are formed in the thickness direction of the resin film forming layer. The efficient heat transfer path increases the thermal diffusivity.

The specific gravity of the particles of the anisotropic shape (C1) is preferably 2 to 4 g/cm ³ , more preferably 2.2 to 3 g/cm ³ .

The thermal conductivity in the long axis direction of the anisotropically shaped particles (C1) is preferably from 60 to 400 W/m. K, more preferably 100~300W/m. K. By using the particles of the anisotropic shape described above, the formed heat conduction path has high thermal conductivity, and as a result, a resin film forming layer having a high thermal diffusivity is obtained.

(C2) hindering particles

The shape of the barrier particles (C2) is such that the formation of the major axis direction of the particles (C1) is substantially the same as the width direction or the flow direction (the direction parallel to the resin film formation layer) of the resin film formation layer, and is not particularly limited. The specific shape is preferably spherical. Preferred particles (C2) are, for example, cerium oxide particles or alumina particles, and particularly preferably alumina particles.

The average particle diameter of the interference particles (C2) is more than 20 μm, preferably more than 20 μm, 50 μm or less, more preferably more than 20 μm and 30 μm or less. When the average particle diameter of the particles (C2) is in the above range, the thermal diffusivity and the film forming property of the resin film forming layer can be increased, and the filling ratio of the particles (C2) in the resin film forming layer can be increased. Further, the specific surface area per unit volume of the particles of the anisotropic shape is large, and the viscosity of the composition for forming a resin film layer is likely to increase. When a filler other than the anisotropic particles having a large specific surface area and an average particle diameter of 20 μm or less is added, the viscosity of the composition for the resin film forming layer is further increased, and it is difficult to form a resin film, and it is necessary to use a large amount of solvent. Dilution, there are doubts about reduced productivity. Further, the average particle diameter of the particles (C2) was prevented from being 20 pieces of the interference particles (C2) which were not selected by the electron microscope, and the long axis diameter was measured, and the number average particle diameter obtained by calculating the arithmetic mean was calculated.

The average particle diameter of the barrier particles (C2) is preferably from 0.6 to 0.95 times, more preferably from 0.7 to 0.9 times the thickness of the resin film formation layer to be described later. When the average particle diameter of the barrier particles (C2) is less than 0.6 times the thickness of the resin film formation layer, the proportion of the anisotropic particles (C1) which is substantially the same as the width direction or the flow direction of the resin film formation layer is formed in the major axis direction. It is difficult to form an efficient heat conduction path and the thermal diffusivity is lowered. When the average particle diameter of the particles (C2) is more than 0.95 times the thickness of the resin film forming layer, irregularities are formed on the surface of the resin film forming layer, and the adhesion of the resin film forming layer is deteriorated. Further, it is difficult to obtain a composition for a thermally conductive resin film forming layer having uniform properties.

The particle distribution (CV value) of the interference particle (C2) is preferably from 5 to 40%, more preferably from 10 to 30%. When the particle size distribution of the particles (C2) is in the above range, the uniform thermal conductivity can be efficiently achieved. When the CV value is small, since the particle diameter is uniform, the amount of particles having a small volume entering the particle and the particle gap is small, and the inorganic filler (C) is hardly filled more closely, and as a result, it is difficult to obtain a resin film forming layer having high thermal conductivity. On the other hand, when the CV value is large, the particle diameter of the inorganic filler (C) is larger than the thickness of the resin film forming layer after the film formation, and as a result, irregularities are formed on the surface of the resin film forming layer, and the adhesion of the resin film forming layer is deteriorated. Further, when the CV value is too large, it is difficult to obtain a thermally conductive composition having uniform properties. The particle size distribution (CV value) of the interference particle (C2) is observed by an electron microscope, and the major axis diameter is measured for 200 or more particles, and the standard deviation of the major axis diameter is calculated, and the average particle diameter is calculated and calculated (long axis diameter) The standard deviation) / (average particle diameter) was obtained.

The content ratio of the inorganic filler (C) in the resin film-forming layer is preferably from 30 to 80% by mass, more preferably from 40 to 70% by mass, based on the total solid content of the resin film-forming layer. It is 50 to 60% by mass. Inorganic filler (C) If the content ratio is in the above range, an efficient heat conduction path can be formed to increase the thermal diffusivity.

The inorganic filler (C) includes the particles of the anisotropic shape (C1) and the particles (C2), and the weight ratio of the particles of the anisotropic shape (C1) to the particle (C2) is preferably 5:1 to 1:5. More preferably 4:1~1:4.

When the weight ratio of the particles of the anisotropically shaped particles (C1) and the barrier particles (C2) is in the above range, the ratio of the anisotropically shaped particles (C1) which is substantially the same as the thickness direction of the resin film forming layer in the longitudinal direction can be increased. As a result, the thermal diffusivity of the resin film forming layer can be improved. Further, it is possible to suppress the adhesion of the resin film forming layer to form a smooth resin film.

The concentration of the inorganic filler (C) in the resin film forming layer is preferably from 30 to 50% by volume, more preferably from 35 to 45% by volume.

Other ingredients

The resin film forming layer may contain the following components in addition to the above-mentioned binder polymer component (A), curable component (B), and inorganic filler (C).

(D) colorant

A colorant (D) can be formulated in the resin film forming layer. When a semiconductor device is incorporated into a device, it is possible to prevent an operation error of a semiconductor device such as infrared rays generated by a peripheral device. This effect is particularly effective when a resin film is used as a protective film. Colorants use organic or inorganic pigments and dyes. Among these, a black pigment is preferred from the viewpoint of electromagnetic wave and infrared shielding properties. The black pigment is carbon black, iron oxide, manganese dioxide, aniline black, activated carbon, or the like, but is not limited thereto. From the viewpoint of improving the reliability of the semiconductor device, carbon black is particularly preferable. The amount of the coloring agent (D) is preferably 0.1 to 35 parts by mass, more preferably 0.5 to 25 parts by mass, based on 100 parts by mass of the total solid content constituting the resin film forming layer. 1~15 quality department.

(E) hardening accelerator

The hardening accelerator (E) is used to adjust the hardening speed of the resin film forming layer. In the case where the hardening accelerator (E), particularly the curable component (B), at least the thermosetting component and the thermosetting agent are used, it is preferred to use an epoxy resin and a thermosetting agent in combination.

Preferred hardening accelerators are tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylamine ethanol, tris(dimethylaminomethyl)phenol; 2-methylimidazole , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, etc. Imidazoles; organophosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine; tetraphenylborate such as tetraphenylphosphonium tetraphenylborate or triphenylphosphine tetraphenylborate; . These may be used alone or in combination of two or more.

The hardening accelerator (E) is preferably contained in an amount of 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, based on 100 parts by mass of the total amount of the thermosetting component and the thermosetting agent. When the hardening accelerator (E) is contained in the above range, it has excellent adhesion even when exposed to high temperature and high humidity, and high reliability can be achieved even when exposed to strict reflux conditions. When the content of the hardening accelerator (E) is small, the hardening is insufficient, and sufficient adhesion cannot be obtained. When the amount is too high, the curing accelerator having a high polarity causes the resin film forming layer to move toward the interface side and segregate under high temperature and high humidity. Reduce the reliability of semiconductor devices.

(F) coupling agent

In order to improve the adhesion to the wafer of the resin film forming layer, the adhesion, and/or the aggregation property of the resin film, a coupling agent (F) having a functional group reactive with an inorganic substance and a functional group reactive with an organic functional group is used. Use coupling agent (F), lossless by tree The heat resistance of the resin film obtained by curing the lipid film forming layer can improve the water resistance.

The coupling agent (F) is preferably a compound which reacts with its organic functional group as a group which reacts with a functional group possessed by the binder polymer component (A) and the curable component (B). The coupling agent (F) is preferably a decane coupling agent. The coupling agent is, for example, γ-glycidoxypropyltrimethoxydecane, γ-glycidoxypropylmethyldiethoxydecane, β-(3,4-epoxycyclohexyl)ethyl Trimethoxydecane, γ-(methacryloxypropyl)trimethoxydecane, γ-aminopropyltrimethoxydecane, N-6-(aminoethyl)-γ-aminopropyl Trimethoxydecane, N-6-(aminoethyl)-γ-aminopropylmethyldiethoxydecane, N-phenyl-γ-aminopropyltrimethoxydecane, γ-ureido Propyltriethoxydecane, γ-hydrothiopropyltrimethoxydecane, γ-hydrothiopropylmethyldimethoxydecane, bis(3-triethoxycarbamidopropyl)tetra Sultan, methyltrimethoxydecane, methyltriethoxydecane, vinyltrimethoxydecane, vinyltriethoxydecane, imidazolium, and the like. These may be used alone or in combination of two or more.

The coupling agent (F) usually contains 0.1 to 20 parts by mass, preferably 0.2 to 10 parts by mass, more preferably 100 parts by mass based on the total amount of the binder polymer component (A) and the curable component (B). Contains a ratio of 0.3 to 5 mass parts. When the content of the coupling agent (F) is less than 0.1 part by mass, the above effect may not be obtained, and when it exceeds 20 parts by mass, it may cause degassing.

(G) Photopolymerization initiator

When the resin film forming layer contains the energy ray polymerizable compound as the curable component (B), the energy ray polymerizable compound is cured by irradiation with an energy ray such as ultraviolet rays. In this case, the photopolymerization initiator (G) is contained in the composition constituting the resin film formation layer, and the polymerization hardening time and the light irradiation amount can be reduced.

The photopolymerization initiator (G) is specifically, for example, benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin Butyl ether, benzoin benzoic acid, methyl benzoin benzoate, benzoin dimethyl ketal, 2,4-diethyl thioxanthone, α-hydroxycyclohexyl phenyl ketone, benzyl Diphenyl sulphide, tetramethyl thiuram monosulfide, azobisisobutyronitrile, benzil, dibenzil, diacetyl, 1,2-diphenylmethane , 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]acetone, 2,4,6-trimethylbenzimidyldiphenylphosphine oxide and β- Chloroquinone and the like. The photopolymerization initiator (G) may be used alone or in combination of two or more.

The blending ratio of the photopolymerization initiator (G) is preferably 0.1 to 10 parts by mass, more preferably 1 to 5 parts by mass, based on 100 parts by mass of the energy ray polymerizable compound. When the amount is less than 0.1 part by mass, the photopolymerization is insufficient, and satisfactory transferability cannot be obtained. When the amount exceeds 10 parts by mass, a residue which cannot be photopolymerized is generated, and the curability of the resin film forming layer is insufficient.

(H) bridging agent

In order to adjust the initial adhesion force and cohesive force of the resin film forming layer, a bridging agent may be added. As the bridging agent (H), for example, an organic polyvalent isocyanate compound, an organic polyvalent imine compound or the like.

The organic polyvalent isocyanate compound is, for example, a trivalent body of an aromatic polyvalent isocyanate compound, an aliphatic polyvalent isocyanate compound, an alicyclic polyvalent isocyanate compound, and an organic polyvalent isocyanate compound thereof, and these organic polyvalent isocyanate compounds and plural A terminal isocyanate urethane prepolymer obtained by reacting an alcohol compound or the like.

The organic polyvalent isocyanate compound is specifically, for example, 2,4-toluene dimer Cyanate ester, 2,6-toluene diisocyanate, 1,3-xylene diisocyanate, 1,4-dimethylbenzene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2, 4'-Diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2 4'-diisocyanate, trimethoxypropane plus toluene diisocyanate and lysine isocyanate.

The organic polyvalent imine compound may specifically be, for example, N,N'-diphenylmethane-4,4'-bis(1-aziridine carboxamide), trimethoxypropane-tri-beta-aziridine. An acid ester, tetramethoxymethane-tri-β-aziridine propionate, and N,N'-toluene-2,4-bis(1-aziridinecarboxamide) triethylene melamine.

The bridging agent (H) is usually used in an amount of 0.01 to 20 parts by mass, preferably 0.1 to 10 parts by mass, and more preferably 0.5 to 5 parts by mass, based on 100 parts by mass of the binder polymer component (A).

(I) General purpose additives

In the resin film forming layer, various additives may be blended as needed in addition to the above. Various additives such as leveling agents, plasticizers, antistatic agents, antioxidants, ion trapping agents, decanting agents, chain transfer agents, and the like.

The resin film forming layer formed of each of the above components has adhesiveness and curability, is pressed against a semiconductor wafer, a wafer, or the like in an uncured state, or is followed by hot pressing. After that, it is hardened, and finally, a resin film having high impact resistance can be imparted, and the strength is also excellent, and sufficient protective function can be maintained even under severe high-temperature and high-humidity conditions. In the present invention, the resin film forming layer is preferably used as a film-like adhesive for fixing a semiconductor wafer on a substrate or another semiconductor wafer, or as a protective film for a semiconductor wafer or a semiconductor wafer. Further, the resin film forming layer may be The single-layer structure may have a multilayer structure even if the layer containing the above components is one or more layers.

The thermal diffusivity of the resin film forming layer is 2 × 10 ^-6 m ² /s or more, preferably 2.5 × 10 ^-6 to 5 × 10 ^-6 m ² /s, more preferably 4 × 10 ^-6 to 5 × 10 ^-6 m ² /s. The thermal diffusivity of the cured resin film forming layer (resin film) is preferably 2 × 10 ^-6 m ² /s or more, more preferably 2.5 × 10 ^-6 to 5 × 10 ^-6 m ² /s, which is particularly preferable. It is 4 × 10 ^-6 ~ 5 × 10 ^-6 m ² / s. When the thermal diffusivity of the resin film forming layer is less than 2 × 10 ^-6 m ² /s, the semiconductor device is deformed by heat generation of the semiconductor device, causing failure or breakage, or the calculation speed of the semiconductor device is lowered or the operation error is caused. The reliability of the semiconductor device is lowered. When the thermal diffusivity of the resin film forming layer or the resin film is within the above range, the heat radiation characteristics of the semiconductor device can be improved, and a semiconductor device having excellent reliability can be manufactured.

The index of the heat release property of the resin film forming layer may be a thermal diffusivity or a thermal conductivity, and the thermal conductivity of the resin film forming layer (resin film) after curing is preferably 4 to 15 W/m. K, more preferably 5~10W/m. K.

(sheet for forming a resin film for wafer)

The resin film forming layer is obtained by coating a resin film forming composition obtained by mixing the above respective components in an appropriate solvent in an appropriate solvent, and applying the composition to a support sheet. The resin film-forming composition may be applied to a film formed by a support sheet and other steps to be dried to form a film, or may be transferred onto a support sheet.

The sheet for forming a resin film for a wafer of the present invention can form the resin film forming layer releasably on a support sheet. The shape of the sheet for forming a resin film for a wafer of the present invention may be a shape such as a strip shape or a label shape.

The support sheet uses, for example, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a polyvinyl chloride copolymer film, Polyethylene terephthalate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene. (Meth)acrylic copolymer film, ethylene. A film of a (meth) acrylate copolymer film, a polystyrene film, a polycarbonate film, a polyimide film, or a fluorine resin. These bridged membranes can also be used. These laminated films can also be used. These colored films can also be used.

In the sheet for forming a resin film for a wafer of the present invention, when used, the support sheet is peeled off, and the resin film forming layer is transferred onto a semiconductor wafer or a wafer. In particular, in the case where the support film is peeled off after the resin film forming layer is thermally cured, since the support sheet must withstand the heat during the heat hardening of the resin film forming layer, it is preferred to use an annealing treatment of polyethylene terephthalate excellent in heat resistance. Membrane, polyethylene naphthalate film, polymethylpentene film, polyimide film. In order to facilitate peeling between the resin film forming layer and the support sheet, the surface tension of the support sheet is preferably 40 mN/m or less, more preferably 37 mN/m or less, and particularly preferably 35 mN/m or less. The lower limit is usually about 25 mN/m. The support sheet having a low surface tension can be obtained by appropriately selecting a material, or can be obtained by applying a release agent to the surface of the support sheet and performing a release treatment.

The release agent used for the release treatment may be an alkylate type, an anthrone type, a fluorine type, an unsaturated polyester type, a polyolefin type, a wax type or the like, but particularly an alkylate type, an anthrone type, or a fluorine type. The release agent is preferably heat resistant.

In order to use the above-mentioned release agent to peel off the surface of the treated sheet, the release agent may be directly applied without a solvent or diluted with a solvent, and coated by a gravure coating method, a Meyer bar coating method, an air knife coating method, a roll coating method, or the like. The laminate is formed by a wet lamination method, a dry lamination method, a hot melt lamination method, a melt extrusion lamination method, a co-extrusion lamination method, or the like at room temperature or by heat hardening or electron beam hardening.

Further, the resin film forming layer may be laminated on the re-peelable adhesive layer provided on the support sheet. The re-peelable adhesive layer may be a weak adhesive force having an adhesive strength to the extent that the peelable resin film is formed, or an energy ray hardenability which is reduced by the energy ray irradiation to lower the adhesive strength. When the energy ray-curable re-peelable adhesive layer is used, the region where the resin film forming layer is laminated may be irradiated with energy rays in advance, and the adhesiveness may be lowered, and the other regions may not be irradiated with the energy ray. For example, in order to follow the mold, the high adhesion force is maintained. Only the other regions do not perform the irradiation of the energy ray, for example, the region corresponding to other regions of the substrate can be printed, the energy ray shielding layer is designed, and the energy ray irradiation is performed from the substrate side. The re-peelable adhesive layer can be formed by various conventional adhesives (for example, a wide-purpose adhesive such as a rubber type, an acrylic type, an anthrone oxime, a urethane oxime, or a vinyl ester type). The thickness of the re-peelable adhesive layer is not particularly limited, but is usually 1 to 50 μm, preferably 3 to 20 μm.

The thickness of the support sheet is usually 10 to 500 μm, preferably 15 to 300 μm, and particularly preferably 20 to 250 μm.

The thickness of the resin film forming layer is preferably from 20 to 60 μm, more preferably from 25 to 50 μm, particularly preferably from 30 to 45 μm. Further, the thickness of the resin film forming layer is preferably 2 to 5 μm larger than the average particle diameter of the particles (C2).

Before the use of the sheet for forming a resin film for a wafer, in order to protect the resin film forming layer, another peeling film having a light peeling property may be laminated on the upper surface of the resin film forming layer.

The resin film forming layer of such a sheet for forming a resin film for a wafer can function as a film-like adhesive. The film-like adhesive is applied to any surface of a normal semiconductor wafer, and after being cut into individual wafers by a cutting process, the film is placed (grain bonded). On a substrate or the like, a hardening process is followed by fixing a semiconductor wafer. Such a film-like adhesive is also referred to as a die attachment film. The semiconductor device used as the film-like adhesive agent in the resin film forming layer of the present invention is excellent in heat radiation characteristics, and can suppress the decrease in reliability.

Further, a resin film forming layer of a sheet for forming a resin film for a wafer can be used as a protective film. The resin film forming layer is attached to the inner surface of the wafer semiconductor wafer or the semiconductor wafer of the flip chip type, and is cured by an appropriate means, and has a function of protecting the semiconductor wafer in place of the sealing resin. In the case of being attached to a semiconductor wafer, the protective film prevents damage of the wafer due to the function of reinforcing the wafer. Further, in the semiconductor device in which the resin film forming layer of the present invention is a protective film, since the heat radiation property is excellent, the reliability of the semiconductor device can be suppressed from being lowered.

(Method of Manufacturing Semiconductor Device)

In the following, a method of using the sheet for forming a resin film for a wafer according to the present invention will be described as an example in which the sheet is suitable for the production of a semiconductor device.

In the method of manufacturing a semiconductor device of the present invention, the resin film forming layer of the sheet for forming a resin film for a wafer is attached to the inner surface of a semiconductor wafer on which a circuit is formed on the surface, and then a semiconductor wafer having a resin film on its inner surface is obtained. The resin film is preferably a protective film of a semiconductor wafer or a semiconductor wafer. Further, the method for fabricating the semiconductor wafer of the present invention preferably further comprises the following steps (1) to (3), and the steps (1) to (3) are performed in an arbitrary order.

Step (1): peeling off the support sheet and the resin film forming layer or the resin film; Step (2): curing the resin film forming layer to obtain a resin film, and (3): cutting the semiconductor wafer and the resin film forming layer or the resin film.

The semiconductor wafer can be a germanium wafer or a combination of gallium, arsenic, etc. Semiconductor wafers. The circuit formation on the surface of the wafer can be performed by various methods including a conventionally used method such as an etching method or a lift off method. Thereafter, the opposite surface (inner surface) of the circuit surface of the semiconductor wafer is polished. The polishing method is not particularly limited, and it may be polished by a known means such as a polishing disc. When the inner surface is polished, in order to protect the circuit on the surface, an adhesive sheet called a surface protection sheet is attached to the circuit surface. The inner surface polishing is performed by grinding the disk surface side (ie, the surface protection sheet side) with a chuck table or the like, and grinding the inner surface side of the circuit without forming a circuit. The thickness after wafer polishing is not particularly limited, but is usually about 20 to 500 μm.

Thereafter, the fracture layer generated by the inner surface of the grinding is removed as needed. The removal of the fracture layer can be performed by chemical etching, plasma etching, or the like.

After that, the resin film forming layer of the sheet for forming a resin film for wafer is attached to the inner surface of the semiconductor wafer. Thereafter, steps (1) to (3) are performed in an arbitrary order. The detailed steps are described in detail in JP-A-2002-280329. The order of steps (1), (2), and (3) will be described below as an example.

First, a resin film forming layer of the above-mentioned sheet for forming a resin film for a wafer is attached to the inner surface of a semiconductor wafer having a surface forming circuit. Thereafter, the support sheet is peeled off from the resin film forming layer to obtain a laminate of the semiconductor wafer and the resin film forming layer. Thereafter, the resin film forming layer is cured to form a resin film on the entire surface of the wafer. In the case where a thermosetting component and a thermosetting agent are used as the curable component (B) in the resin film forming layer, the resin film forming layer is cured by thermal curing. When the energy ray-polymerizable compound is blended in the curable component (B), the resin film-forming layer is cured by energy ray irradiation, and when the thermosetting component, the thermosetting agent, and the energy ray-polymerizable compound are used in combination, the simultaneous or sequential may be used. Hardening by heating and energy line irradiation. The irradiated energy line such as ultraviolet (UV) or electron beam (EB), etc., preferably uses ultraviolet light. line. As a result, the resin film formed of the cured resin is formed on the inner surface of the wafer, and the strength is increased as compared with the case of the wafer alone. Therefore, the damage of the thinned wafer during processing can be reduced. Further, a resin film having a high thermal diffusivity is formed to impart excellent heat release characteristics. In addition, the coating liquid for the resin film is directly coated on the wafer or the inner surface of the wafer by a coating method to form a film, and the resin film is excellent in thickness uniformity.

Next, a laminate of a semiconductor wafer and a resin film formed on each of the circuits on the surface of the wafer is cut. The dicing is to cut the wafer together with the resin film. Wafer dicing is performed in a conventional manner using a dicing sheet. As a result, a semiconductor wafer having a resin film on its inner surface was obtained.

Finally, the diced wafer is picked up by a pan-hand method such as a suction to obtain a semiconductor wafer having a resin film on its inner surface. According to the present invention described above, a resin film having a high uniformity of thickness can be easily formed on the inner surface of the wafer, so that cracks in the cutting process or after packaging are hard to occur. Furthermore, since the obtained semiconductor device imparts excellent heat radiation characteristics, the reliability of the semiconductor device can be suppressed from being lowered. Therefore, the semiconductor wafer can be actually mounted on a specific substrate in a flip-chip manner to fabricate a semiconductor device. The semiconductor wafer having the resin film on the inner surface may be attached to another device such as a die pad or another semiconductor wafer (on the wafer mounting portion) to manufacture a semiconductor device.

In the method of manufacturing another semiconductor device using the sheet for forming a resin film for a wafer according to the present invention, the resin film forming layer including the sheet is attached to a semiconductor wafer, and the semiconductor wafer is diced to form a semiconductor wafer. It is preferable that the resin film forming layer is adhered to any surface of the semiconductor wafer and peeled off from the support sheet, and the semiconductor wafer is placed on the die pad or other semiconductor wafer by the resin film forming layer. The following is to attach a resin film to the inner surface of the wafer. The manufacturing method of forming a layer is explained as an example.

First, the frame line and the inner surface side of the semiconductor wafer are placed on the resin film forming layer of the sheet for forming a resin film for a wafer according to the present invention, and the semiconductor wafer is fixed. In this case, when there is no stickiness at room temperature, it may be appropriately heated (not particularly limited, but preferably 40 to 80 ° C). After the curable component (B) of the energy ray-polymerizable compound is blended in the resin film-forming layer, the resin film-forming layer is irradiated with an energy ray from the side of the support sheet, and the resin film-forming layer is preliminarily hardened to increase the resin film-forming layer. The cohesive force can also lower the adhesion between the resin film forming layer and the support sheet. Thereafter, the semiconductor wafer is cut by a cutting method such as a cutter to obtain a semiconductor wafer. The depth of the cut at this time is the sum of the thickness of the semiconductor wafer and the thickness of the resin film forming layer, plus the wear of the cutter. Further, the irradiation of the energy ray can be performed at any stage after the semiconductor wafer is attached or before the semiconductor wafer is detached (extracted), for example, after the dicing, or after the extension step described below. The irradiation of the energy ray can also be carried out several times.

After that, the sheet for forming a resin film for wafer is stretched as needed, and the interval between the semiconductor wafers is expanded to facilitate the removal of the semiconductor wafer. At this time, a difference occurs between the resin film forming layer and the support sheet, and the adhesion between the resin film forming layer and the support sheet is reduced, and the take-out property of the semiconductor wafer is improved. As described above, when the semiconductor wafer is taken out, the cut resin film forming layer is deposited on the inner surface of the semiconductor wafer, and can be peeled off from the support sheet.

Next, the semiconductor wafer is placed on the die pad of the frame or the surface of another semiconductor wafer (lower wafer) by the resin film forming layer (hereinafter, the die pad or the lower wafer surface of the wafer is referred to as a "wafer mounting portion") ). The wafer mounting portion is heated before the semiconductor wafer is placed or immediately after being placed. Heating temperature Usually, it is 80 to 200 ° C, preferably 100 to 180 ° C, and the heating time is usually 0.1 second to 5 minutes, more preferably 0.5 second to 3 minutes, and the pressure at the time of mounting is usually 1 kPa to 200 MPa.

After the semiconductor wafer is placed on the wafer mounting portion, it can be heated as needed. In this case, the heating condition is the above heating temperature range, and the heating time is usually from 1 to 180 minutes, preferably from 10 to 120 minutes.

It is also possible to use a resin which is usually used without being subjected to heat treatment after the mounting, and to cure the resin film forming layer by heating. Through such a process, the resin film forming layer is cured, and a semiconductor device in which the semiconductor wafer and the wafer mounting portion are strongly adhered can be obtained. Since the resin film forming layer is fluidized under the conditions of die bonding, the unevenness of the wafer mounting portion is sufficiently buried, and the occurrence of voids can be prevented, and the reliability of the semiconductor device can be improved. Further, since the thermal diffusivity of the resin film forming layer is increased, the semiconductor device has excellent heat releasing characteristics, and the reliability of the semiconductor device can be suppressed from being lowered.

In the sheet for forming a resin film for a wafer of the present invention, in addition to the above-described method of use, a semiconductor compound, glass, ceramic, metal or the like may be used.

Example

Hereinafter, the present invention will be described by way of examples, but the invention is not limited to the examples. In the following examples and comparative examples, <thermal diffusivity measurement> was carried out as follows.

<Measurement of thermal diffusivity>

(before hardening)

A resin film forming layer (thickness: 40 μm) was cut, and a sample having a square of 1 cm was obtained. Thereafter, the thermal conductivity of the sample was measured using a heat conduction measuring device (Ai-Phase Mobile 1u, manufactured by Ai-phase Co., Ltd.). Thereafter, the thermal diffusivity of the sample was calculated from the specific heat and specific gravity of the sample, and the thermal diffusivity of the resin film forming layer was obtained. The case where the thermal diffusivity is 2 × 10 ^-6 m ² /s or more is indicated as "good", and the case where the thermal diffusivity is less than 2 × 10 ^-6 m ² /s is indicated as "poor".

(after hardening)

A resin film forming layer (thickness: 40 μm) was cut, and a sample having a square of 1 cm was obtained. Thereafter, the sample was heated (130 ° C, 2 hours) and hardened, and then the thermal conductivity of the sample was measured using a heat conduction measuring device (Ai-Phase Mobile 1u, manufactured by Ai-phase Co., Ltd.). Thereafter, the thermal diffusivity of the sample was calculated from the specific heat and specific gravity of the sample, and the thermal diffusivity of the resin film forming layer was obtained. The case where the thermal diffusivity is 2 × 10 ^-6 m ² /s or more is indicated as "good", and the case where the thermal diffusivity is less than 2 × 10 ^-6 m ² /s is indicated as "poor".

<Composition for Resin Film Forming Layer>

The components constituting the resin film forming layer are as follows.

(A) Adhesive polymer component: a copolymer of 85 parts by mass of methyl methacrylate and 15 parts by mass of 2-hydroxyethyl acrylate (weight average molecular weight: 400,000, glass transition temperature: 6 ° C)

(B) hardening ingredients

(B1) bisphenol A epoxy resin (epoxy equivalent 180~200g/eq)

(B2) Dicyclopentadiene type epoxy resin (Epiclon HP-7200HH manufactured by Dainippon Ink and Chemicals Co., Ltd.)

(B3) dicyandiamide (ADEKA Hardener 3636AS manufactured by Asahi Kasei Corporation)

(C) Inorganic filler:

(C1) Boron nitride particles (UHP-2 manufactured by Showa Denko Co., Ltd., shape: plate shape, average particle diameter 11.8 μm, diameter to length ratio 11.2, thermal conductivity in the long axis direction 200 W/m.K, specific gravity 2.3 g/cm ³ )

(C2) Alumina filler (CB-A30S, manufactured by Showa Denko Co., Ltd., shape: spherical, average particle size 30 μm, specific gravity 4.0 g/cm ³ )

(D) Colorant: Black pigment (carbon black, manufactured by Mitsubishi Chemical Corporation, #MA650, average particle diameter 28 nm)

(E) Hardening accelerator: 2-phenyl-4,5-dihydroxymethylimidazole (Curezol 2PHZ-PW, manufactured by Shikoku Kasei Kogyo Co., Ltd.)

(F) coupling agent: A-1110 (manufactured by Unicar, Japan)

(Examples and Comparative Examples)

Each of the above components was blended in the amounts described in Table 1 to obtain a resin film-forming composition. A methyl ethyl ketone solution (solid concentration: 61% by weight) of the obtained composition was coated with a silicon release treatment support sheet (Lintec Co., Ltd.) in an amount of 40 μm (Comparative Example 3: 60 μm) after drying. The peeling-treated surface of SP-PET381031 (thickness: 38 μm) was dried (drying conditions: 110 ° C in an oven, 1 minute), and a resin film forming layer was formed on the support sheet to obtain a sheet for forming a resin film for a wafer.

The <thermal diffusivity measurement> was performed on the obtained resin film forming layer of the sheet for forming a resin film for a wafer. The results are shown in Table 2.

The resin film forming layer of the sheet for forming a resin film for a wafer of the example exhibits an excellent thermal diffusivity. Therefore, a resin film forming layer having a support sheet and a support film formed thereon is used, and the resin film forming layer contains the binder polymer component (A), the curable component (B), and the inorganic filler (C). The sheet for forming a resin film for a wafer having a thermal diffusivity of 2 × 10 ^-6 m ² /s or more in the resin film forming layer can provide a highly reliable semiconductor device.

Claims (10)

A sheet for forming a resin film for a wafer, comprising a support sheet and a resin film forming layer formed on the support sheet, the resin film forming layer comprising an adhesive polymer component (A), a curable component (B), and an inorganic filler (C); wherein the curable component (B) contains a thermosetting component or an energy ray polymerizable compound, and the inorganic filler (C) contains an anisotropic particle (C1) having an average particle diameter of 20 μm or less and an average particle diameter exceeding 20 μm of the barrier particle (C2); wherein the anisotropically shaped particle (C1) is a nitride particle; the barrier particle (C2) is selected from at least one particle consisting of a group consisting of cerium oxide and aluminum oxide; When the component (B) contains the thermosetting component, the resin film forming layer contains 1 to 1500 parts by mass of the thermosetting component with respect to 100 parts by mass of the adhesive polymer component (A); When the component (B) contains the energy ray polymerizable compound, the resin film forming layer contains 1 to 1500 parts by mass of the energy ray polymerizable compound with respect to 100 parts by mass of the adhesive polymer component (A); The film forming layer contains 30 to 60% by mass of the inorganic Filling material (C); the thermal diffusion rate of the resin film layer is ² × 10 ^-6 m 2 / s or more. The sheet for forming a resin film for a wafer according to the first aspect of the invention, wherein the anisotropically shaped particles (C1) have an aspect ratio of 5 or more. The sheet for forming a resin film for a wafer according to the second aspect of the invention, wherein the anisotropically shaped particles (C1) have a thermal conductivity of 60 to 400 W/m in the long axis direction. K. The sheet for forming a resin film for a wafer according to the second aspect of the invention, wherein the barrier particle (C2) has an average particle diameter of 0.6 to 0.95 times the thickness of the resin film forming layer. The sheet for forming a resin film for a wafer according to any one of claims 2 to 4, wherein the weight ratio of the anisotropically shaped particles (C1) to the barrier particles (C2) is 5:1 to 1:5. . The sheet for forming a resin film for a wafer according to any one of claims 1 to 3, wherein the resin film forming layer has a thickness of 20 to 60 μm. The sheet for forming a resin film for a wafer according to any one of claims 1 to 3, wherein the resin film forming layer functions as a film-like adhesive for fixing a semiconductor wafer to a substrate or another semiconductor wafer. The sheet for forming a resin film for a wafer according to any one of claims 1 to 3, wherein the resin mold forming layer is a protective film of a semiconductor wafer or a wafer. The sheet for forming a resin film for a wafer according to any one of claims 1 to 3, wherein the resin film forming layer has a thickness of 25 to 50 μm. A sheet for forming a resin film for a wafer according to any one of claims 1 to 9 of the invention.