TWI591702B - A method of dividing a patterned substrate - Google Patents

A method of dividing a patterned substrate Download PDF

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TWI591702B
TWI591702B TW102123443A TW102123443A TWI591702B TW I591702 B TWI591702 B TW I591702B TW 102123443 A TW102123443 A TW 102123443A TW 102123443 A TW102123443 A TW 102123443A TW I591702 B TWI591702 B TW I591702B
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substrate
processing
tool
pattern
metal film
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TW201421554A (en
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Yuma Iwatsubo
Ikuyoshi Nakatani
Shohei Nagatomo
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Mitsuboshi Diamond Ind Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • H01L21/4896—Mechanical treatment, e.g. cutting, bending
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

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  • Microelectronics & Electronic Packaging (AREA)
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  • Optics & Photonics (AREA)
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  • Laser Beam Processing (AREA)
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Description

具有圖案之基板之分割方法 Method for dividing a substrate having a pattern

本發明係關於對在基板上二維地反覆配置多個單位圖案而構成之具有圖案之基板進行分割之加工方法，尤其是關於對具備由多層膜與由金屬膜所構成之反射防止膜之具有圖案之基板進行分割之方法。 The present invention relates to a method of dividing a substrate having a pattern formed by repeatedly arranging a plurality of unit patterns two-dimensionally on a substrate, and more particularly to having an anti-reflection film comprising a multilayer film and a metal film. A method of dividing a substrate of a pattern.

LED元件，例如係以對由在藍寶石單結晶等之基板(晶圓、母基板)上二維地反覆形成LED元件之單位圖案而構成之具有圖案之基板(具有LED圖案之基板)、在呈格子狀地設置之稱為路徑(street)之分割預定區域進行分割、單片化(晶片化)之程序而製造。此處，路徑係藉由分割而構成LED元件之2個的部分之間隙部分即寬度狹窄之區域。 The LED element is, for example, a patterned substrate (a substrate having an LED pattern) formed by two-dimensionally forming a unit pattern of an LED element on a substrate (wafer, mother substrate) such as sapphire single crystal. It is manufactured by a process of dividing and dicing (wafering) a predetermined segmentation area called a street. Here, the path is a region where the gap portion of the two portions of the LED element, that is, the narrow width, is formed by division.

作為用於該分割之手段，已知有如下之手段：將脈衝寬度為psec(皮秒，picosecond)等級之超短脈衝光即雷射光，以各個單位脈衝光之被照射區域沿著加工預定線離散地設置之條件進行照射，藉此沿著加工預定線(一般為路徑中心位置)形成用於分割之起點(例如，參照專利文獻1)。於專利文獻1所揭示之手段中，在各個單位脈衝光之被照射區域中形成之加工痕之間，產生劈開或裂開之龜裂伸展(裂紋伸展)，沿著該龜裂對基板進行分割，藉此實現單片化。 As means for the division, there is known a method in which an ultrashort pulse light having a pulse width of psec (picosecond) level, that is, laser light, is irradiated along the planned line with each unit pulsed light. Irradiation is performed under discrete conditions, whereby a starting point for division is formed along a planned line (generally a path center position) (for example, refer to Patent Document 1). In the means disclosed in Patent Document 1, crack propagation (crack extension) occurs between the processing marks formed in the irradiated regions of the respective unit pulsed lights, and the substrate is divided along the cracks. To achieve singulation.

專利文獻1：日本特開2011-131256號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2011-131256

在如上述般之具有圖案之基板之中，存在有在藉由分割而獲得之LED元件之成為端面之面，設置有使在元件內部發光之雷射光反射之反射膜者。該反射膜一般設在與設有單位圖案之面為相反側之面。作為反射膜，一般係例如TiO2之薄膜層與SiO2之薄膜層反覆交互地積層之稱為DBR之多層膜、或Al、Ag、Au等之金屬膜、或者用以更提高反射效率之在DBR上設置有金屬膜之複合構成者等。 In the substrate having the pattern as described above, there is a surface on which the LED element obtained by the division is an end surface, and a reflection film for reflecting the laser light that emits light inside the element is provided. The reflective film is generally provided on the opposite side to the surface on which the unit pattern is provided. As a reflection film, generally based film such as TiO 2 layer and the SiO 2 thin-film layer of the layered alternately repeatedly referred to the DBR multi-layer film, or Al, Ag, Au and the like of a metal film, or to further improve the reflection efficiency of the A composite member of a metal film or the like is provided on the DBR.

對如此般之具備有反射膜之具有圖案之基板，欲藉由上述之雷射光之照射而進行分割之情形，一般存在有欲將用以避免雷射光之對單位圖案之照射之反射膜之側設成雷射光之被照射面之要求。然而，在反射膜包含金屬膜而構成之情形，將該金屬膜作為被照射面而導致在金屬膜吸收雷射光而難以進行良好之分割。 In the case where the patterned substrate having the reflective film is to be divided by the irradiation of the above-described laser light, there is generally a side of the reflective film which is intended to prevent the irradiation of the unit pattern by the laser light. Set the requirements for the illuminated surface of the laser light. However, when the reflective film is composed of a metal film, the metal film is used as the surface to be irradiated, and the laser light is absorbed by the metal film, so that it is difficult to perform good division.

本發明係有鑑於上述之課題而完成者，其目的在於提供一種能夠對具有作為反射膜之金屬膜之具有圖案之基板良好地進行分割之方法。 The present invention has been made in view of the above problems, and an object of the invention is to provide a method capable of favorably dividing a substrate having a pattern of a metal film as a reflective film.

為了解決上述課題，請求項1之發明，係對在單結晶基板上二維地反覆配置多個單位元件圖案而構成之具有圖案之基板進行分割並單片化之方法，其特徵在於：該具有圖案之基板，係由在該單結晶基板中與該單位元件圖案之形成面為相反側之主面反覆交互地積層相異之2個氧化膜而構成之多層膜、與金屬膜積層而成者；具備：金屬膜去除步驟，係在使前端具備刀前端之工具之該前端位於該多層膜與該金屬層之界面高度之狀態下，使該工具對該具有圖案之基板相對地移動，藉此於該具有圖案之基板沿著預先決定之加工預定線僅去除該金屬膜而形成加工溝槽；龜裂伸 展加工步驟，係對已去除該金屬膜後之該具有圖案之基板，沿著該加工預定線，藉由各個單位脈衝光以在該具有圖案之基板形成之加工痕離散地位於該加工溝槽之方式照射雷射光，使龜裂於該具有圖案之基板從各個該加工痕伸展；以及裂斷步驟，係對經該龜裂伸展加工步驟之該具有圖案之基板，沿著該加工預定線進行裂斷。 In order to solve the problem, the invention of claim 1 is a method for dividing and singulating a substrate having a pattern in which a plurality of unit element patterns are two-dimensionally arranged on a single crystal substrate, wherein the method includes The substrate of the pattern is a multilayer film formed by laminating two different oxide films on the opposite side of the surface on which the unit element pattern is formed on the single crystal substrate, and is formed by laminating a metal film. Providing a metal film removing step of moving the tool relative to the interface between the multilayer film and the metal layer at a tip end of the tool having the tip end of the blade, thereby moving the tool relative to the patterned substrate Forming a processing groove on the patterned substrate along only a predetermined predetermined line to form a processing groove; cracking and stretching The processing step is performed on the patterned substrate after the metal film has been removed, and the processing marks formed on the patterned substrate are discretely located in the processing groove along the predetermined line along the processing line. Irradiating the laser light to cause the cracked substrate to extend from each of the processing marks; and the step of breaking the patterned substrate through the crack stretching processing step along the processing line Broken.

請求項2之發明，係請求項1記載之具有圖案之基板之分割方法，其中，在該龜裂伸展加工步驟中，使該雷射光之焦點位於形成有該加工溝槽之部位之緊鄰下方、且在該單結晶基板之內部於其厚度方向與該多層膜之界面位置距離數μm之範圍內。 The invention of claim 2 is the method for dividing a patterned substrate according to claim 1, wherein in the crack stretching step, the focus of the laser light is located immediately below the portion where the processing groove is formed, Further, the inside of the single crystal substrate is within a range of several μm from the interface position between the thickness direction and the multilayer film.

請求項3之發明，係請求項1或請求項2記載之具有圖案之基板之分割方法，其中，在該金屬膜去除步驟中，一邊從該工具對該具有圖案之基板賦予0.5N以上、1.0N以下之負載，一邊使該工具移動，而對該金屬膜進行去除。 The invention of claim 3 is the method for dividing a patterned substrate according to claim 1 or claim 2, wherein in the metal film removing step, the substrate having the pattern is given 0.5 N or more and 1.0 from the tool. The metal film is removed while moving the tool under a load of N or less.

請求項4~5之發明，係請求項1至請求項3中任一項記載之具有圖案之基板之分割方法，其中，該工具具備於該前端係平坦之矩形狀之微小面即刀背緣(land)；在該金屬膜去除步驟中，以該刀背緣成為該工具之最下端部、且其長邊方向與該工具之相對移動方向一致之方式，使該工具移動。 The method of claim 4, wherein the tool is provided with a method of dividing a substrate having a pattern as shown in any one of claims 1 to 3, wherein the tool has a rectangular back surface which is flat at the front end, that is, a blade edge ( In the metal film removing step, the tool is moved such that the blade back edge becomes the lowermost end of the tool and the longitudinal direction thereof coincides with the relative moving direction of the tool.

請求項5~6之發明，係請求項4~5記載之具有圖案之基板之分割方法，其中，在將該刀背緣與該金屬膜去除步驟中之該工具之該相對移動方向前面所形成之角作為安裝角、且將該刀背緣與與其連續之該工具之長邊方向最下端面所形成之角作為刀背緣角時，該相對移動方向中之刀 背緣長度係1μm以上、15μm以下，該安裝角係50°~80°，刀背緣角係10°~20°。 The invention of claim 5 to 6, wherein the method of dividing a substrate having a pattern according to any one of claims 4 to 5, wherein the back edge of the blade and the relative movement direction of the tool in the step of removing the metal film are formed When the angle is the mounting angle and the angle formed by the back edge of the tool and the lowermost end surface of the tool in the longitudinal direction thereof is the blade back edge angle, the knife in the relative movement direction The length of the back edge is 1 μm or more and 15 μm or less, and the mounting angle is 50° to 80°, and the angle of the back edge of the blade is 10° to 20°.

根據請求項1至請求項5之發明，在欲藉由利用雷射光之龜裂伸展加工進行用以對在單結晶基板之緊鄰上方具備多層膜與由金屬膜構成之反射膜之具有圖案之基板進行單面化之分割加工之情形，藉由先於該龜裂伸展加工預先去除僅位於加工預定線之位置之金屬膜並使多層膜露出，可實現良好之單片化。 According to the invention of claim 1 to claim 5, the substrate having a pattern for providing a reflective film composed of a multilayer film and a metal film immediately above the single crystal substrate is performed by a crack stretching process using laser light In the case of performing the singulation processing of the singulation, it is possible to achieve good singulation by previously removing the metal film located only at the position where the predetermined line is processed before the crack stretching process and exposing the multilayer film.

100‧‧‧溝槽加工裝置 100‧‧‧groove processing device

101‧‧‧平台 101‧‧‧ platform

102‧‧‧夾頭 102‧‧‧ chuck

104‧‧‧導引桿 104‧‧‧ Guide rod

104g‧‧‧導件 104g‧‧‧guides

105‧‧‧橋架 105‧‧‧ Bridge

106‧‧‧頭 106‧‧‧ head

106s‧‧‧支持體 106s‧‧‧Support

107‧‧‧保持具 107‧‧‧Holding

108‧‧‧馬達 108‧‧‧Motor

200‧‧‧雷射加工裝置 200‧‧‧ Laser processing equipment

201‧‧‧控制器 201‧‧‧ Controller

202‧‧‧控制部 202‧‧‧Control Department

203‧‧‧儲存部 203‧‧‧ Storage Department

204‧‧‧載台 204‧‧‧stage

204m‧‧‧移動機構 204m‧‧‧Mobile agencies

205‧‧‧照射光學系統 205‧‧‧Optical optical system

206‧‧‧上部觀察光學系統 206‧‧‧Upper viewing optical system

206a‧‧‧攝影機 206a‧‧‧ camera

206b‧‧‧顯示器 206b‧‧‧ display

207‧‧‧上部照明系統 207‧‧‧Upper lighting system

208‧‧‧下部照明系統 208‧‧‧Lower lighting system

216‧‧‧下部觀察光學系統 216‧‧‧ Lower viewing optical system

216a‧‧‧攝影機 216a‧‧‧ camera

216b‧‧‧顯示器 216b‧‧‧ display

252‧‧‧聚光透鏡 252‧‧‧ Concentrating lens

282‧‧‧聚光透鏡 282‧‧‧Concentrating lens

CP‧‧‧元件晶片 CP‧‧‧ component chip

CR、CR1、CR2‧‧‧龜裂 CR, CR1, CR2‧‧‧ crack

Db‧‧‧光束徑 Db‧‧‧ beam path

F‧‧‧反射膜 F‧‧·reflective film

F1‧‧‧多層膜 F1‧‧‧multilayer film

F2‧‧‧金屬膜 F2‧‧‧ metal film

G‧‧‧加工溝槽 G‧‧‧Processing trenches

L1‧‧‧上部照明光 L1‧‧‧Upper illumination

L2‧‧‧下部照明光 L2‧‧‧Lower illumination

LB‧‧‧雷射光 LB‧‧‧Laser light

LF‧‧‧焦點 LF‧‧ focus

M‧‧‧加工痕 M‧‧‧ machining marks

OF‧‧‧定向平面 OF‧‧‧ Orientation plane

P1‧‧‧加工預定面 P1‧‧‧Processing surface

PL‧‧‧加工預定線 PL‧‧‧Processing line

S1‧‧‧上部照明光源 S1‧‧‧Upper illumination source

S2‧‧‧下部照明光源 S2‧‧‧lower illumination source

SL‧‧‧雷射光源 SL‧‧‧Laser light source

ST‧‧‧路徑 ST‧‧‧ path

TL‧‧‧溝槽加工工具 TL‧‧‧groove processing tool

TL1‧‧‧前端部 TL1‧‧‧ front end

TL2‧‧‧刀背緣 TL2‧‧‧ knife edge

UP‧‧‧單位圖案 UP‧‧‧ unit pattern

W‧‧‧基板 W‧‧‧Substrate

W1‧‧‧單結晶基板 W1‧‧‧Single crystal substrate

圖1，係具有圖案之基板W之示意俯視圖及部分放大圖。 Fig. 1 is a schematic plan view and a partial enlarged view of a substrate W having a pattern.

圖2，係具有圖案之基板W之與Y方向垂直之剖面圖。 2 is a cross-sectional view of the substrate W having a pattern perpendicular to the Y direction.

圖3，係示意地表示具有圖案之基板W之分割加工之程序之圖式。 Fig. 3 is a view schematically showing a procedure of a division process of a substrate W having a pattern.

圖4，係進行至龜裂伸展加工後之具有圖案之基板W之光學顯微鏡像。 Fig. 4 is an optical microscope image of the patterned substrate W after the crack stretching process.

圖5，係關於對圖4所示之具有圖案之基板W提供裂斷加工後之剖面之光學顯微鏡像。 Fig. 5 is an optical microscope image showing a cross section of the patterned substrate W shown in Fig. 4 after the cracking process.

圖6，係表示使用於金屬膜F2之剝離去除之溝槽加工工具TL之概略圖及放大其前端部TL1之圖式。 Fig. 6 is a schematic view showing a groove processing tool TL used for peeling off the metal film F2 and an enlarged view of the front end portion TL1.

圖7，係將具有圖案之基板W之金屬膜F2剝離時之對剝離後之基板上面拍攝之光學顯微鏡像。 Fig. 7 is an optical microscope image taken on the substrate after peeling off the metal film F2 of the patterned substrate W.

圖8，係例示溝槽加工裝置100之圖式。 FIG. 8 is a view showing a pattern of the groove processing apparatus 100.

圖9，係用以說明龜裂伸展加工中之雷射光LB之照射態樣之圖式。 Fig. 9 is a view for explaining an irradiation state of the laser light LB in the crack stretching process.

圖10，係概略性地表示雷射加工裝置200之構成之模式圖。 FIG. 10 is a schematic view showing the configuration of the laser processing apparatus 200.

<具有圖案之基板>首先，針對本實施形態中之分割對象即具有圖案之基板W進行說明。圖1，係具有圖案之基板W之示意俯視圖及部分放大圖。圖2，係具有圖案之基板W之與Y方向垂直之剖面圖。 <Substrate having a pattern> First, a substrate W having a pattern which is a divided object in the present embodiment will be described. Fig. 1 is a schematic plan view and a partial enlarged view of a substrate W having a pattern. 2 is a cross-sectional view of the substrate W having a pattern perpendicular to the Y direction.

所謂的具有圖案之基板W，例如係於藍寶石等之單結晶基板(晶圓、母基板)W1之一主面上，積層形成既定之元件圖案而構成者。元件圖案，於單片化後，各個具有二維地反覆配置有成為一個元件晶片之複數個單位圖案UP之構成。例如，將成為LED元件等之光學元件或電子元件之單位圖案UP二維地重複。 The substrate W having a pattern is formed, for example, on one of the main surfaces of a single crystal substrate (wafer, mother substrate) W1 such as sapphire, and a predetermined element pattern is formed by lamination. After the singulation, the element patterns each have a configuration in which a plurality of unit patterns UP serving as one element wafer are repeatedly arranged two-dimensionally. For example, the unit pattern UP which is an optical element or an electronic element such as an LED element is two-dimensionally repeated.

此外，具有圖案之基板W以俯視觀察成為大致圓形狀，但於外周之一部分具備有直線狀之定向平面(Orientation Flat)OF。在本實施形態中，設定為於具有圖案之基板W之面內將定向平面OF之延伸方向稱為X方向，將與X方向正交之方向稱為Y方向。 Further, the patterned substrate W has a substantially circular shape in plan view, but has a linear Orientation Flat OF at one of the outer circumferences. In the present embodiment, the direction in which the orientation plane OF is extended is referred to as the X direction in the plane of the substrate W having the pattern, and the direction orthogonal to the X direction is referred to as the Y direction.

作為單結晶基板W1，係使用具有70μm~200μm之厚度者。使用100μm厚之藍寶石單結晶者為較佳之一例。此外，元件圖案一般形成為具有數μm左右之厚度。此外，元件圖案亦可具有凹凸。 As the single crystal substrate W1, a thickness of 70 μm to 200 μm is used. A preferred one is a single crystal of sapphire having a thickness of 100 μm. Further, the element pattern is generally formed to have a thickness of about several μm. Further, the element pattern may have irregularities.

例如，若為LED晶片製造用之具有圖案之基板W，係將由以GaN(氮化鎵)為代表之III族氮化物半導體所構成之發光層、其他之複數個薄膜層磊晶(epitaxial)形成於藍寶石單結晶之上，進一步地，藉由於該薄膜層之上，形成於LED元件(LED晶片)中構成通電電極之電極圖案而構成。 For example, in the case of a patterned substrate W for LED wafer fabrication, a light-emitting layer composed of a group III nitride semiconductor typified by GaN (gallium nitride) and other plural thin film layers are epitaxially formed. Further, the sapphire single crystal is further formed by forming an electrode pattern of a current-carrying electrode formed in an LED element (LED wafer) on the thin film layer.

另外，在具有圖案之基板W之形成時，作為單結晶基板W1，亦可為使用以於主面內與定向平面垂直之Y方向作為軸而使c面或a 面等之結晶面之面方位相對於主面法線方向傾斜數度左右之所謂的賦予斜角(off-angle)之基板(亦稱斜基板)之態樣。 Further, when the substrate W having the pattern is formed, as the single crystal substrate W1, the Y direction perpendicular to the orientation plane in the main surface may be used as the axis to make the c-plane or a A surface of a so-called off-angle substrate (also referred to as an inclined substrate) whose surface orientation of a crystal face such as a surface is inclined by about several degrees with respect to the normal direction of the main surface.

將各個單位圖案UP之邊界部分即寬度狹窄之區域稱為路徑ST(street)。路徑ST，係具有圖案之基板W之分割預定位置，並以下述之態樣而將雷射光沿著路徑ST照射，藉此將具有圖案之基板W分割成各個之元件晶片。路徑ST，一般係以數十μm左右之寬度，以於俯視觀察元件圖案之情形成為格子狀之方式設定。然而，亦可在路徑ST之部分單結晶基板W1不需要露出，而亦於路徑ST之位置連續地形成成為元件圖案之薄膜層。 A boundary portion of each unit pattern UP, that is, a region having a narrow width is referred to as a path ST (street). The path ST is a predetermined position at which the substrate W of the pattern is divided, and the laser light is irradiated along the path ST in the following manner, whereby the patterned substrate W is divided into individual element wafers. The path ST is generally set to have a width of about several tens of μm, and is set in a lattice shape in a plan view of the element pattern. However, it is also possible that the single crystal substrate W1 does not need to be exposed in the portion of the path ST, and a thin film layer which is an element pattern is continuously formed at the position of the path ST.

另一方面，如圖2所示，於單結晶基板W1之未形成有單位圖案UP之側之主面，存在有形成反射膜F之至少一方之情況。在本實施形態中，反射膜F係成為由設置於單結晶基板W1之緊鄰上方之多層膜F1、與設置於該多層膜F1之上之金屬膜F2所構成者。 On the other hand, as shown in FIG. 2, at least one of the reflective films F may be formed on the main surface of the single crystal substrate W1 on the side where the unit pattern UP is not formed. In the present embodiment, the reflective film F is composed of a multilayer film F1 disposed immediately above the single crystal substrate W1 and a metal film F2 provided on the multilayer film F1.

多層膜F1，亦稱為DBR，例如係分別以數十層左右反覆交互地積層數十nm~數百nm左右之厚度之TiO2之薄膜層與SiO2之薄膜層而構成之具有數μm左右之厚度之部位。 The multilayer film F1, which is also referred to as a DBR, is formed by, for example, a film layer of TiO 2 and a film layer of SiO 2 having a thickness of about several tens of nanometers to several hundreds of nanometers alternately laminated over several tens of layers, respectively. The part of the thickness.

此外，金屬膜F2，係由Al、Ag、Au等構成，且具有數十nm~數百nm左右之厚度。 Further, the metal film F2 is made of Al, Ag, Au, or the like, and has a thickness of about several tens nm to several hundreds of nm.

<具有圖案之基板之分割加工之概略>接著，針對對上述之構成之具有圖案之基板W以沿著路徑ST進行分割之處理流程進行說明。所述之分割，一般係以沿著通過各個路徑ST之中心位置且沿著具有圖案之基板W之厚度方向設定而成之加工預定面P1而進行。另外，將加工預定面P1之厚度方向中之端部稱作加工預定線PL，但於以下之說明，為方便起見， 存在有不區分兩者而使用之情況。 <Summary of Division Processing of Patterned Substrate> Next, a processing flow for dividing the substrate W having the pattern described above by dividing along the path ST will be described. The division is generally performed along the processing plan surface P1 which is set along the center position of each of the paths ST and along the thickness direction of the substrate W having the pattern. Further, the end portion in the thickness direction of the processing plan surface P1 is referred to as a processing planned line PL, but for the sake of convenience, for the sake of convenience, There are cases where it is used without distinguishing between the two.

此外，在本實施形態中，係於具有圖案之基板W設有上述之多層膜F1與由金屬膜F2所構成之反射膜F者。在未設有所述反射膜F之情形，例如可以如專利文獻1所揭示之手法進行雷射加工，以分割具有圖案之基板W。然而，在設有反射膜F之情形，由於金屬膜F2會吸收雷射光，即使以上述之手法進行雷射加工，亦難以良好地分割具有圖案之基板W。 Further, in the present embodiment, the substrate W having the pattern is provided with the above-described multilayer film F1 and the reflective film F composed of the metal film F2. In the case where the reflection film F is not provided, for example, laser processing can be performed by the method disclosed in Patent Document 1 to divide the substrate W having the pattern. However, in the case where the reflective film F is provided, since the metal film F2 absorbs the laser light, even if laser processing is performed by the above-described method, it is difficult to divide the substrate W having the pattern well.

有鑑於此，在本實施形態中，係在將位於加工預定線PL之部位之金屬膜F2預先去除下，藉由進行雷射加工及接續於其之裂斷加工，而分斷具有圖案之基板W。 In view of the above, in the present embodiment, the metal film F2 located at the portion of the planned line PL is removed in advance, and the substrate having the pattern is cut by performing laser processing and subsequent cracking processing. W.

圖3，係示意地表示本實施形態之具有圖案之基板W之分割加工程序之圖式。另外，在圖3中，雖針對於Y方向延伸之加工預定線PL成為分割對象之情形進行說明，但於沿著X方向之加工預定線PL成為對象之情形，其處理內容亦相同。 Fig. 3 is a view schematically showing a division processing program of the patterned substrate W of the embodiment. In addition, in the case of the case where the planned line PL extended in the Y direction is divided, the processing target line PL along the X direction is targeted, and the processing contents are also the same.

如圖3(a)所示，在本實施形態中，使用前端部TL1成為超硬合金或由類鑽碳膜(DLC：Diamond Like Carbon)等硬質材料所構成之刀前端之溝槽加工工具TL，進行位於加工預定線PL之部位之金屬膜F2之去除。更具體而言，係在將具有圖案之基板W，在以金屬膜F2成為上面之方式水平地配置之狀態下，如以箭頭AR1所示般，使溝槽加工工具TL之前端部TL1接近於較具有圖案之基板W之外緣更外側並為加工預定線PL之延長線上之位置。 As shown in Fig. 3 (a), in the present embodiment, the groove processing tool TL which is a tip end portion TL1 which is a cemented carbide or a hard material such as a diamond-like carbon (DLC: Diamond Like Carbon) is used. The removal of the metal film F2 at the portion of the processing planned line PL is performed. More specifically, in a state in which the patterned substrate W is horizontally arranged such that the metal film F2 is placed on the upper surface, as shown by an arrow AR1, the front end portion TL1 of the groove processing tool TL is brought close to The outer edge of the substrate W having the pattern is further outside and is a position on the extension line of the predetermined line PL.

然後，如圖3(b)所示，在將前端部TL1之高度位置設定於金 屬膜F2與多層膜F1之界面附近之狀態下，使溝槽加工工具TL沿著被設定成加工預定線PL之Y方向(圖3中與圖面垂直之方向)對著具有圖案之基板W相對地移動。藉此，如圖3(c)所示，前端部TL1通過之部分之金屬膜F2藉由溝槽加工工具TL而剝離去除，形成加工溝槽G。換言之，實現在加工預定面P1之部位多層膜F1露出之狀態。另外，在圖3(c)中，加工溝槽G之寬度雖較路徑ST之寬度為小，但此並非為必要之態樣，若可確保於接下來進行雷射加工時只要雷射光不會照射於金屬膜F2之寬度即可。 Then, as shown in FIG. 3(b), the height position of the front end portion TL1 is set to gold. In a state in the vicinity of the interface between the film F2 and the multilayer film F1, the groove processing tool TL is opposed to the patterned substrate W along the Y direction (the direction perpendicular to the plane in FIG. 3) set to the planned line PL. Move relatively. As a result, as shown in FIG. 3(c), the portion of the metal film F2 through which the tip end portion TL1 passes is peeled off by the groove processing tool TL to form the processing groove G. In other words, the state in which the multilayer film F1 is exposed at the portion where the predetermined surface P1 is processed is realized. In addition, in FIG. 3(c), although the width of the processing groove G is smaller than the width of the path ST, this is not a necessary aspect, and it is ensured that only laser light is not required for the subsequent laser processing. It is sufficient to irradiate the width of the metal film F2.

使利用如此之溝槽加工工具TL之金屬膜F2之去除，沿著所有之加工預定線PL(加工預定面P1)進行。 The removal of the metal film F2 by the groove processing tool TL is performed along all the processing planned lines PL (processing predetermined surface P1).

一旦對所有之加工預定線PL完成金屬膜F2之去除，接著進行雷射加工。所述之雷射加工，係在例如下述之雷射加工裝置中，藉由使雷射光LB沿著加工預定線PL(加工預定面P1)掃描而進行。更詳細而言，所述之雷射加工，係作為龜裂伸展加工而進行者。關於龜裂伸展加工之細節將於以下進行說明。在所述之龜裂伸展加工中，如圖3(d)所示，使雷射光LB之焦點LF，位於單結晶基板W1之內部、於其厚度方向與多層膜F1之界面位置距離數μm之範圍內。 Once the removal of the metal film F2 is completed for all the processing planned lines PL, laser processing is then performed. The laser processing described above is performed by, for example, scanning a laser beam LB along the planned line PL (processing predetermined surface P1). More specifically, the laser processing described above is carried out as a crack stretching process. Details of the crack stretching process will be described below. In the crack propagation processing, as shown in FIG. 3(d), the focal point LF of the laser light LB is located inside the single crystal substrate W1, and the distance between the thickness direction and the interface of the multilayer film F1 is several μm. Within the scope.

一旦以所述之態樣進行龜裂伸展加工，在雷射光LB之掃描方向中，於單結晶基板W1之焦點LF之深度位置，離散地形成藉由雷射光LB之照射所產生之變質區域即微小之加工痕M，且於各個之加工痕M之間、或具有圖案之基板W之厚度方向，龜裂進行伸展。於圖3(e)中，例示有龜裂CR從加工痕M往具有圖案之基板W之厚度方向伸展之態樣。 Once the crack stretching process is performed in the above-described manner, in the scanning direction of the laser beam LB, the metamorphic region generated by the irradiation of the laser light LB is discretely formed at the depth position of the focus LF of the single crystal substrate W1. The minute processing marks M are stretched between the respective processing marks M or the thickness direction of the substrate W having the pattern. In FIG. 3(e), a state in which the crack CR extends from the processing mark M to the thickness direction of the substrate W having the pattern is exemplified.

使藉由如此之雷射光LB之照射之龜裂伸展加工，沿著所有 之加工預定面P1進行。 The cracking and stretching process by the irradiation of such laser light LB, along all The processing predetermined surface P1 is performed.

另外，在藉由龜裂伸展加工而於厚度方向產生之龜裂CR之中，從加工痕M往具有圖案之基板W之上方進行伸展之龜裂CR1，由於從加工痕M至單結晶基板W1之上面之距離較短，因此在幾乎所有之情形，將抵達至該上面。而且，在存在於其上方之多層膜F1中，同樣地龜裂進行伸展、或產生因照射雷射光LB而導致之熔融、蒸發等。另一方面，關於從加工痕M往具有圖案之基板W之下方進行伸展之龜裂CR2，雖亦係其前端將抵達至相反面者，但亦存在有留在單結晶基板W1內之情況。因此，在進行了雷射加工之時點，具有圖案之基板W並非一定完全地被分割。 In the crack CR generated in the thickness direction by the crack stretching process, the crack CR1 extending from the processing mark M to the upper side of the patterned substrate W is from the processing mark M to the single crystal substrate W1. The distance above is shorter, so in almost all cases, it will arrive above. Further, in the multilayer film F1 existing above it, the crack is similarly stretched, or melted, evaporated, or the like due to irradiation of the laser light LB. On the other hand, the crack CR2 extending from the processing mark M to the lower side of the patterned substrate W may be such that the tip end thereof reaches the opposite surface, but may remain in the single crystal substrate W1. Therefore, the substrate W having the pattern is not necessarily completely divided at the time of the laser processing.

因此，例如使用眾知之裂斷裝置，進行使藉由龜裂伸展加工所形成之龜裂伸展至具有圖案之基板W之相反面之裂斷加工。藉此，可將具有圖案之基板W完全地進行分割且單片化(晶片化)。另外，在藉由龜裂之伸展將具有圖案之基板W於厚度方向完全地分斷之情形，雖不需要上述之裂斷加工，但即使一部分之龜裂已抵達至相反面，藉由龜裂伸展加工而將具有圖案之基板W完全地二分之情況係極為少數，因此一般均伴隨有裂斷加工。 Therefore, for example, a cracking process in which the crack formed by the crack stretching process is extended to the opposite surface of the patterned substrate W is performed using a known cracking device. Thereby, the patterned substrate W can be completely divided and diced (wafered). Further, in the case where the patterned substrate W is completely divided in the thickness direction by the stretching of the crack, although the above-described cracking processing is not required, even if a part of the crack has reached the opposite surface, cracking is caused. In the case where the stretching process is performed and the substrate W having the pattern is completely divided into a very small number, it is generally accompanied by a cracking process.

藉由進行裂斷加工，如圖3(f)所示，可分別地獲得形成有單位圖案UP及反射膜F之多數個元件晶片CP。在裂斷加工中，可應用眾知之3點支持之手法等。 By performing the dicing process, as shown in FIG. 3(f), a plurality of element wafers CP on which the unit pattern UP and the reflection film F are formed can be obtained separately. In the cracking process, a well-known three-point support method can be applied.

圖4，係以如上述般之順序進行至龜裂伸展加工後之具有圖案之基板W之光學顯微鏡像，圖5，係關於對圖4所示之具有圖案之基板W提供裂斷加工後之剖面之光學顯微鏡像。 4 is an optical microscope image of the patterned substrate W after the crack stretching process in the above-described order, and FIG. 5 is a view showing the process of providing the substrate W having the pattern shown in FIG. An optical microscope image of the section.

由圖4確認在加工痕M之間龜裂伸展之樣子、或龜裂抵達單結晶基板W1之表面之樣子、或進一步地確認多層膜F1沿著加工痕M之配列方向部分熔融、蒸發之樣子等。 4, it is confirmed that the crack is stretched between the processing marks M, or the crack reaches the surface of the single crystal substrate W1, or it is further confirmed that the multilayer film F1 is partially melted and evaporated along the arrangement direction of the processing mark M. Wait.

此外，由圖5確認在反射膜F之附近存在有微小之凹凸，但若觀察關於具有圖案之基板W之厚度方向則此只不過為極少之一部分，以及，在佔據具有圖案之基板W之大部分之單結晶基板W1，大致形成有不具凹凸之極為平坦之分割面。所述之結果，表示本實施形態之加工手法係能夠適當地分割具有圖案之基板W者。 Further, it is confirmed from Fig. 5 that there are minute irregularities in the vicinity of the reflective film F, but if the thickness direction of the substrate W having the pattern is observed, it is only a very small portion, and the substrate W having the pattern is occupied. A part of the single crystal substrate W1 is formed with a substantially flat divided surface having no irregularities. As a result, it is shown that the processing method of the present embodiment can appropriately divide the substrate W having the pattern.

<溝槽加工工具及溝槽加工裝置>接著，針對上述之溝槽加工工具TL之詳細構造及具備有所述之溝槽加工工具TL之溝槽加工裝置之一構成態樣進行說明。 <Groove Machining Tool and Groove Machining Apparatus> Next, a detailed configuration of the above-described groove processing tool TL and a configuration of one of the groove processing apparatuses including the above-described groove processing tool TL will be described.

圖6，係表示用於金屬膜F2之剝離去除之溝槽加工工具TL之概略圖及放大其前端部TL1之圖式。 Fig. 6 is a schematic view showing a groove processing tool TL for peeling off the metal film F2 and an enlarged view of the tip end portion TL1.

溝槽加工工具TL，如圖6(a)所示，係概略棒狀(在圖6所示之情形為角棒狀)之構件，但至少於其長邊方向一前端部具備刀前端部分即前端部TL1，包含加工時之進行方向(相對於具有圖案之基板W之工具TL之相對移動方向)之垂直剖面成為多角形狀(例如矩形狀)，並且與加工時之進行方向垂直之剖面成為相對於該進行方向對稱之等角梯形狀。 As shown in Fig. 6 (a), the groove processing tool TL is a member having a substantially rod shape (in the case of the angle bar shown in Fig. 6), but at least a tip end portion thereof is provided at a tip end portion in the longitudinal direction. The front end portion TL1 includes a vertical cross section (for example, a rectangular shape) in a direction in which the processing is performed (relative to the moving direction of the tool TL having the patterned substrate W), and a cross section perpendicular to the direction in which the processing is performed is made to be opposite. The isometric trapezoidal shape is symmetric.

但是，更詳細而言，如圖6(b)所示，前端部TL1之進行方向前側之最下端部呈角面狀地成為倒角(chamfer)，藉此形成稱作刀背緣TL2之矩形狀之微小面而構成。 More specifically, as shown in FIG. 6(b), the lowermost end portion of the front end portion TL1 in the direction of the front side is chamfered in an angular shape, thereby forming a rectangular shape called the blade back edge TL2. It is composed of tiny faces.

具有所述構造之溝槽加工工具TL，於加工時，如圖6(b)所 示，刀背緣TL2成為最下端部且其長邊方向以保持成為與進行方向平行之姿勢之方式使用。換言之，溝槽加工工具TL，係以使其長邊方向從垂直方向以既定角度往進行方向前側傾斜之姿勢使用。 The groove processing tool TL having the above configuration is processed as shown in Fig. 6(b) It is to be noted that the blade back edge TL2 is the lowermost end portion and its longitudinal direction is used to maintain a posture parallel to the progress direction. In other words, the groove processing tool TL is used in a posture in which the longitudinal direction thereof is inclined from the vertical direction at a predetermined angle toward the front side.

此處，在以刀背緣TL2成為於加工時與進行方向平行時之沿進行方向之長度作為刀背緣長度D、以刀背緣TL2與前端部TL1之進行方向前面所形成之角作為安裝角α、以刀背緣TL2與前端部TL1之長邊方向最下端面所形成之角作為刀背緣角β時，從良好地去除金屬膜F2之觀點來看，刀背緣長度D較佳為1μm~15μm左右，安裝角α較佳為50°~80°，刀背緣角β較佳為10°~20°。另外，刀背緣TL2之與進行方向正交之方向之厚度(刀背緣寬度)，若可適當地對應欲去除之金屬膜F2之寬度而設定即可。 Here, the length of the edge in the direction in which the blade back edge TL2 is parallel to the progress direction during the processing is the blade edge length D, and the angle formed in front of the blade edge TL2 and the leading end portion TL1 as the mounting angle α, When the angle formed by the blade back edge TL2 and the lowermost end surface of the distal end portion TL1 in the longitudinal direction is the blade back edge angle β, the blade back edge length D is preferably about 1 μm to 15 μm from the viewpoint of the good removal of the metal film F2. The mounting angle α is preferably 50° to 80°, and the blade back edge angle β is preferably 10° to 20°. Further, the thickness (the blade back edge width) of the blade back edge TL2 in the direction orthogonal to the direction of the blade may be set as appropriate in accordance with the width of the metal film F2 to be removed.

此外，如上述般在以溝槽加工工具TL對金屬膜F2進行去除之情形，溝槽加工工具TL賦予具有圖案之基板W之負載(剝離力)，較佳為0.5N~1.0N。在所述之情形，能夠沿著對應路徑ST而設定之加工預定線PL適當地僅對金屬膜F2進行去除。在賦予較1.0N更大之負載之情形，則由於不僅去除金屬膜F2亦會去除到多層膜F1，此外，亦使得剝離產生至前端部TL1通過之側方之部分等而於加工後之形狀產生雜亂不整之情形，因此不理想。另一方面，在負載設定成未滿0.5N之情形，則由於無法將金屬膜F2穩定地剝離，因此亦不理想。 Further, as described above, when the metal film F2 is removed by the groove processing tool TL, the groove processing tool TL applies a load (peeling force) to the substrate W having the pattern, and is preferably 0.5 N to 1.0 N. In the case described above, it is possible to appropriately remove only the metal film F2 by the planned processing line PL set along the corresponding path ST. In the case where a load larger than 1.0 N is applied, the multilayer film F1 is removed not only by the removal of the metal film F2 but also by the side of the side where the front end portion TL1 passes, etc., after processing. It is a messy situation, so it is not ideal. On the other hand, when the load is set to less than 0.5 N, the metal film F2 cannot be stably peeled off, which is not preferable.

假設，在賦予較1.0N更大之負載之情形，在例如沿著於X方向延伸之加工預定線PL去除金屬膜F2之後，沿著於與其正交之Y方向延伸之加工預定線PL對金屬膜進行去除時，對於既已沿著X方向之加工之差異，係在金屬膜F2被去除之加工預定線PL彼此之正交部位，由於溝槽 加工工具TL剝離了多層膜F1，而無法進行良好之剝離，因此不理想。 It is assumed that, in the case of giving a load larger than 1.0 N, after the metal film F2 is removed, for example, along the planned line PL extending in the X direction, the metal is processed along the planned line PL extending in the Y direction orthogonal thereto. When the film is removed, the difference between the processing in the X direction and the processing line PL which is removed by the metal film F2 is orthogonal to each other due to the groove. Since the processing tool TL peels off the multilayer film F1 and does not perform good peeling, it is not preferable.

圖7，係作為表示所述負載與剝離之良劣關係之一例之已剝離具有圖案之基板W之金屬膜F2時對剝離後之基板上面拍攝之光學顯微鏡像。具體而言，係針對單結晶基板W1為藍寶石，且多層膜F1由TiO2與SiO2之薄膜層構成、金屬膜F2由約0.65μm之厚度之Au構成之具有圖案之基板W，在將此金屬膜F2沿著正交之二方向依X方向→Y方向之順序剝離後，對基板上面拍攝而獲得之影像。此處，溝槽加工工具TL之規格，係刀背緣長度D為8μm，安裝角度α為70°，刀背緣角β為20°。圖7(a)，係將溝槽加工工具TL賦予具有圖案之基板W之負載設定成0.53N時之光學顯微鏡像，圖7(b)，係將該負載設定成1.2N時之光學顯微鏡像。 Fig. 7 is an optical microscope image taken on the substrate after peeling off when the metal film F2 of the patterned substrate W has been peeled off as an example of the relationship between the load and the peeling. Specifically, the substrate W having a single crystal substrate W1 is sapphire, and the multilayer film F1 is composed of a thin film layer of TiO 2 and SiO 2 , and the metal film F2 is composed of Au having a thickness of about 0.65 μm, and is patterned. The metal film F2 is peeled off in the order of the X direction → the Y direction along the two orthogonal directions, and the image obtained by photographing the upper surface of the substrate is obtained. Here, the groove processing tool TL has a blade back edge length D of 8 μm, a mounting angle α of 70°, and a blade back edge angle β of 20°. Fig. 7(a) shows an optical microscope image in which the load of the groove processing tool TL is applied to the substrate W having the pattern set to 0.53 N, and Fig. 7(b) shows the optical microscope image when the load is set to 1.2 N. .

在圖7(a)所示之攝影影像中，都於兩方向僅金屬膜F2以一樣之寬度良好地剝離，但在圖7(b)所示之攝影影像中，在Y方向之加工中，在一部分中多層膜F1剝離並且單結晶基板W1露出，此外，亦於加工形狀產生雜亂不整。亦即，表示了加工後之狀態不均勻且無法進行較佳之剝離之樣子。 In the photographic image shown in Fig. 7(a), only the metal film F2 is peeled off in the same width in both directions. However, in the photographic image shown in Fig. 7(b), in the Y-direction processing, In a part of the multilayer film F1, the single crystal substrate W1 is peeled off, and in addition, the processed shape is also disordered. That is, it shows that the state after the processing is not uniform and it is impossible to perform the preferable peeling.

圖8，係例示利用上述般之溝槽加工工具TL進行加工之溝槽加工裝置100之圖式。溝槽加工裝置100，可於水平面內之一方向(y軸方向)移動，且具備有可保持載置於上面之具有圖案之基板W之平台101。更具體而言，於平台101，具備有例如由玻璃等之透明之構件所構成、且於水平面內旋轉自如之夾頭102，而成為可藉由該夾頭102固定具有圖案之基板W。 Fig. 8 is a view showing a groove processing apparatus 100 which is processed by the above-described groove processing tool TL. The groove processing apparatus 100 is movable in one direction (y-axis direction) in the horizontal plane, and is provided with a stage 101 capable of holding the patterned substrate W placed thereon. More specifically, the stage 101 is provided with a chuck 102 which is formed of a transparent member such as glass and which is rotatable in a horizontal plane, and the substrate W having the pattern can be fixed by the chuck 102.

另外，於圖8中雖省略圖示，但於平台101之透明夾頭102 之下方，具備可對固定於夾頭102之具有圖案之基板W，透過夾頭102從下方觀察之觀察光學系統。 In addition, although the illustration is omitted in FIG. 8, the transparent collet 102 on the stage 101 is shown. Below it, there is provided an observation optical system which can be attached to the chuck 102 and has a pattern W, which is viewed from below through the chuck 102.

此外，於溝槽加工工具100，構成有橋架105，該橋架105係藉由於水平面內於與y軸方向正交之x軸方向以夾著平台101而設置之2個支柱103、及具備該等2個支柱103支持並且於x軸方向延伸之導件104g之導桿104，而橫跨平台101上。 Further, the groove processing tool 100 is configured with a bridge 105 which is provided by two pillars 103 which are disposed on the platform in the x-axis direction orthogonal to the y-axis direction in the horizontal plane, and which are provided. The two struts 103 support and guide the guide 104 of the guide 104g extending in the x-axis direction across the platform 101.

於導件104g，將安裝溝槽加工工具TL之頭106安裝成可於x軸方向移動。更詳細而言，於頭106，安裝保持有溝槽加工工具TL之保持具107，並且附設有藉由於一方之支柱103所設置之馬達108之旋轉而沿著導件104g移動於x軸方向之支持體106s。藉此，於溝槽加工裝置100中，成為可於x軸方向、於圖6中所稱之進行方向，進行加工。 In the guide 104g, the head 106 to which the groove processing tool TL is attached is mounted so as to be movable in the x-axis direction. More specifically, in the head 106, the holder 107 holding the groove processing tool TL is attached, and is attached to the x-axis direction along the guide 104g by the rotation of the motor 108 provided by one of the pillars 103. Support body 106s. Thereby, in the groove processing apparatus 100, it can process in the x-axis direction, and what is called the direction of FIG.

頭106，成為可調整安裝保持具107時之保持具107之相對於x軸方向之姿勢。也就是，構成為可調整溝槽加工工具TL之姿勢。在將保持有溝槽加工工具TL之保持具安裝於頭106時，藉由調整保持具107之姿勢，而可調整對上述之金屬膜F2進行剝離時之安裝角度α。 The head 106 has a posture in which the holder 107 is adjusted in the x-axis direction when the holder 107 is attached. That is, it is configured to adjust the posture of the groove processing tool TL. When the holder holding the groove processing tool TL is attached to the head 106, the mounting angle α at the time of peeling the metal film F2 described above can be adjusted by adjusting the posture of the holder 107.

此外，頭106，亦成為可適當地調整已安裝之溝槽加工工具TL之高度位置。藉由適當地設定保持具107之高度位置與頭106之移動速度，而可調整溝槽加工工具TL對金屬膜F2所賦予之負載。 Further, the head 106 also has a height position at which the groove processing tool TL that has been mounted can be appropriately adjusted. The load applied to the metal film F2 by the groove processing tool TL can be adjusted by appropriately setting the height position of the holder 107 and the moving speed of the head 106.

在具有如以上般之構成之溝槽加工工具100中，在藉由溝槽加工工具TL，進行如上述般之金屬膜F2之加工之情形時，將具有圖案之基板W以金屬膜F2成為上面側之方式固定於夾頭102，以X方向或Y方向之加工預定線PL成為與x軸方向平行之方式進行具有圖案之基板W之對 準(alignment)，並且以安裝角度α成為既定之值之方式，以適當之姿勢安裝保持有溝槽加工工具TL之保持具107。另外，關於具有圖案之基板W之對準，可適當地應用型樣匹配處理(pattern matching method)、或使用調正標示(alignment mark)之處理等之各種眾知之手法。 In the groove processing tool 100 having the above configuration, when the metal film F2 is processed as described above by the groove processing tool TL, the substrate W having the pattern is made of the metal film F2. The side is fixed to the chuck 102, and the pair of the patterned substrates W is formed such that the planned line PL in the X direction or the Y direction is parallel to the x-axis direction. Alignment is performed, and the holder 107 holding the groove processing tool TL is attached in an appropriate posture so that the mounting angle α becomes a predetermined value. Further, regarding the alignment of the substrate W having the pattern, various well-known methods such as a pattern matching method or a process of using an alignment mark can be suitably applied.

而且，對溝槽加工工具TL之前端部TL1，就x軸方向使其位於較具有圖案之基板W之端部更外側之位置，並且就y軸方向使其位於最初作為加工對象之加工預定線PL之位置。在該位置中，使溝槽加工工具TL以對應金屬膜F2之厚度之既定距離下降之後，藉由使頭106於x軸方向移動，實現在該加工預定線PL位置之金屬膜F2之剝離。 Further, the front end portion TL1 of the groove processing tool TL is positioned further outward than the end portion of the substrate W having the pattern in the x-axis direction, and is positioned in the y-axis direction at the processing line originally as the processing target. The location of the PL. In this position, after the groove processing tool TL is lowered by a predetermined distance corresponding to the thickness of the metal film F2, the peeling of the metal film F2 at the position of the planned line PL is realized by moving the head 106 in the x-axis direction.

一旦完成在一加工預定線PL之位置之剝離，則以對應加工預定線PL之間距之距離將平台於y軸方向移送，同樣地進行在下一加工預定線PL之位置之剝離。一旦在X方向或Y方向中所有之加工預定線PL之位置完成剝離，若使夾頭102旋轉90°並以Y方向或X方向與x軸方向一致之方式進行對準之後，進行同樣之處理即可。藉此，可適當地進行沿著所有之加工預定線PL之金屬膜F2之去除。 Once the peeling at the position of the planned line PL is completed, the stage is transferred in the y-axis direction at a distance corresponding to the distance between the planned lines PL, and the peeling at the position of the next planned line PL is performed in the same manner. Once the peeling is completed at all the positions of the planned line PL in the X direction or the Y direction, the same processing is performed after the chuck 102 is rotated by 90° and aligned in the Y direction or the X direction in the same manner as the x-axis direction. Just fine. Thereby, the removal of the metal film F2 along all the processing planned lines PL can be appropriately performed.

<龜裂伸展加工之原理及裂斷加工>接著，針對龜裂伸展加工及裂斷加工進行說明。圖9，係用以說明龜裂伸展加工中之雷射光LB之照射態樣之圖式。更詳細而言，圖9，係表示龜裂伸展加工時之雷射光LB之重複頻率R(kHz)、雷射光LB之照射時載置具有圖案之基板W之平台之移動速度V(mm/sec)、與雷射光LB之光束點(beam spot)中心間隔△(μm)之關係。另外，在以下之說明中，雖雷射光LB之射出源固定，且藉由使載置有具有圖案之基板W之平台移動，而實現雷射光LB之相對於具有圖案之 基板W之相對的掃描，但即使是在使具有圖案之基板W靜止之狀態下，使雷射光LB之射出源移動之態樣，亦同樣地可實現龜裂伸展加工。 <Principle of Crack Stretching Process and Cracking Process> Next, the crack stretching process and the cracking process will be described. Fig. 9 is a view for explaining an irradiation state of the laser light LB in the crack stretching process. More specifically, FIG. 9 shows the repetition frequency R (kHz) of the laser beam LB during the crack stretching process, and the moving speed V (mm/sec) of the stage on which the substrate W having the pattern is placed when the laser beam LB is irradiated. ), in relation to the center distance of the beam spot of the laser light LB (μm). Further, in the following description, although the source of the laser light LB is fixed, and the stage on which the substrate W having the pattern is placed is moved, the laser light LB is realized with respect to the pattern. Although the substrate W is scanned in the opposite direction, even if the source of the laser light LB is moved while the substrate W having the pattern is stationary, the crack stretching process can be similarly performed.

如於圖9所示般，在雷射光LB之重複頻率係R(kHz)之情形，成為於每1/R(msec)從雷射光源發出一雷射脈衝(亦稱單位脈衝光)。在載置有具有圖案之基板W之平台以速度V(mm/sec)進行移動之情形，成為在從某一雷射脈衝光發出到下一雷射脈衝光發出之間，具有圖案之基板W以V×(1/R)=V/R(μm)進行移動，因此，某一雷射脈衝光之光束中心位置與接著發出之雷射脈衝光之光束中心位置之間隔，也就是光束點中心間隔△(μm)，定為△=V/R。 As shown in FIG. 9, in the case where the repetition frequency of the laser light LB is R (kHz), a laser pulse (also referred to as unit pulse light) is emitted from the laser light source every 1/R (msec). In the case where the stage on which the substrate W having the pattern is placed is moved at a speed V (mm/sec), the substrate W having a pattern is emitted between the emission of a certain laser pulse light and the emission of the next laser pulse light. Moving at V × (1/R) = V / R (μm), therefore, the center position of the beam of a certain laser pulse light and the center position of the beam of the subsequently emitted laser pulse light, that is, the center of the beam point The interval Δ (μm) is determined as Δ = V / R.

由此，在滿足具有圖案之基板W表面之雷射光LB之光束徑(亦稱光束量測徑、光點大小)Dd與光束點中心間隔△為△>Dd……(式1)之情形時，使得在雷射光之掃描時各個雷射脈衝不重疊。 Therefore, when the beam diameter (also referred to as the beam diameter measuring path and spot size) Dd of the laser light LB satisfying the surface of the substrate W having the pattern is Δ>Dd (Expression 1) So that the laser pulses do not overlap during the scanning of the laser light.

此外，一旦將單位脈衝光之照射時間亦即脈衝寬度(pulse width)設定成極短，則在各個單位脈衝光之被照射位置中，較雷射光LB之光點大小更窄之存在於被照射位置之大致中央區域之物質，藉由從所照射之雷射光獲得運動能量，往與被照射面垂直之方向飛散、或變質等，另一方面，產生以伴隨所述之飛散而產生之反力為代表之由單位脈衝光之照射所產生之衝擊或應力作用於該被照射位置之周圍之現象。 Further, when the irradiation time of the unit pulse light, that is, the pulse width is set to be extremely short, in the irradiated position of each unit pulse light, the spot size of the laser light LB is narrower than that which is irradiated. The substance in the substantially central region of the position is obtained by absorbing the kinetic energy from the irradiated laser light, and is scattered or deteriorated in a direction perpendicular to the illuminated surface, and on the other hand, generates a reaction force accompanying the scattering. A phenomenon in which an impact or stress generated by irradiation of a unit pulsed light acts on the periphery of the irradiated position.

利用該等之情況，從雷射光源逐一發出之雷射脈衝(單位脈衝光)，一旦沿著加工預定線依序且離散地照射，則沿著加工預定線之在各個單位脈衝光之被照射位置依序地形成微小之加工痕，並且在各個加工痕 彼此之間連續地形成龜裂，進一步地，亦使龜裂於被加工物之厚度方向進行伸展。如此，藉由龜裂伸展加工而形成之龜裂，成為對具有圖案之基板W進行分割時之分割起點。另外，在雷射光LB為既定之(非零之)失焦(defocus)值之下，以失焦狀態照射之情形，在焦點位置之附近產生變質，且所述之變質產生之區域成為上述之加工痕。 With such a situation, the laser pulses (unit pulse light) emitted one by one from the laser light source are irradiated sequentially and discretely along the planned line, and the respective unit pulsed light is irradiated along the planned line of processing. The position sequentially forms tiny processing marks, and in each processing mark Cracks are continuously formed between each other, and further, the cracks are stretched in the thickness direction of the workpiece. In this way, the crack formed by the crack stretching process becomes the starting point of the division when the substrate W having the pattern is divided. In addition, in the case where the laser beam LB is under a predetermined (non-zero) defocus value and is irradiated in an out-of-focus state, deterioration occurs in the vicinity of the focus position, and the region in which the deterioration occurs is the above-described Processing marks.

另一方面，裂斷步驟，可以如下之方式進行：例如，將具有圖案之基板W設成形成有加工痕之側之主面成為下側之姿勢，在將分割預定線之兩側以2個下側裂斷桿支持之狀態下，在另一主面使上側裂斷桿朝向分割預定線之緊鄰上方之裂斷位置下降。 On the other hand, the cracking step can be performed, for example, by setting the substrate W having the pattern such that the main surface on the side on which the processing mark is formed becomes the lower side, and two sides on the division line to be divided into two In the state in which the lower splitting bar is supported, the upper splitting bar is lowered toward the fracture position immediately above the dividing line on the other main surface.

另外，一旦相當於加工痕之間距之光束點中心間隔△過於大時，將使得裂斷特性不佳而無法實現沿著加工預定線之裂斷。在龜裂伸展加工時，必需考量此點而決定加工條件。 Further, when the center distance Δ of the beam spot corresponding to the distance between the processing marks is too large, the cracking characteristics are not good and the crack along the planned line cannot be achieved. When cracking and stretching is performed, it is necessary to consider this point and determine the processing conditions.

有鑑於以上之問題點，在進行用以在具有圖案之基板W形成成為分割起點之龜裂之龜裂伸展加工時較佳之條件，大致如以下。具體之條件，可根據具有圖案之基板W之材質或厚度等而適當地進行選擇。 In view of the above problems, it is preferable to carry out the conditions for forming a crack stretching process for forming a crack which is a starting point of the division of the patterned substrate W, which is substantially as follows. The specific conditions can be appropriately selected depending on the material or thickness of the substrate W having the pattern.

脈衝寬度τ：1psec以上、50psec以下；光束徑Dd：約1μm~10μm左右；平台移動速度V：50mm/sec以上、3000mm/sec以下；脈衝之重複頻率R：10kHz以上、200kHz以下；脈衝能量E：0.1μJ~50μJ。 Pulse width τ: 1 psec or more, 50 psec or less; beam diameter Dd: about 1 μm to 10 μm; platform moving speed V: 50 mm/sec or more, 3000 mm/sec or less; pulse repetition frequency R: 10 kHz or more and 200 kHz or less; pulse energy E : 0.1μJ~50μJ.

<雷射加工裝置>最後，針對使用於龜裂伸展加工之雷射加工裝置200進行說明。圖10，係概略地表示本發明之實施形態中可應用於 龜裂伸展加工之雷射加工裝置200之構成之模式圖。雷射加工裝置200，主要具備：控制器201，係進行裝置內之各種動作(觀察動作、對準動作、加工動作等)之控制；平台204，係將具有圖案之基板W載置於其上；及照射光學系統205，係將由雷射光源SL射出之雷射光LB照射於具有圖案之基板W。 <Laser Processing Apparatus> Finally, the laser processing apparatus 200 used for the crack stretching processing will be described. Figure 10 is a schematic view showing an application of the embodiment of the present invention. A schematic diagram of the configuration of the laser processing apparatus 200 for crack propagation processing. The laser processing apparatus 200 mainly includes a controller 201 for controlling various operations (observation operation, alignment operation, processing operation, and the like) in the device, and a platform 204 for placing the substrate W having the pattern thereon. And the illumination optical system 205 irradiates the laser light LB emitted from the laser light source SL onto the patterned substrate W.

載台204，主要係由石英等光學上透明之構件構成。載台204，成為可藉由例如吸引泵等之吸引手段211吸引固定載置於其上面之具有圖案之基板W。此外，載台204，成為可藉由移動機構204m而於水平方向移動。另外，在圖1中，在將具有黏著性之保持片材210a貼附於具有圖案之基板W之後，雖以該保持片材210a之側作為被載置面而將具有圖案之基板W載置於載台204，但使用保持片材210a之態樣並非為必需者。 The stage 204 is mainly composed of an optically transparent member such as quartz. The stage 204 is a substrate W having a pattern that can be attracted and fixed by a suction means 211 such as a suction pump. Further, the stage 204 is movable in the horizontal direction by the moving mechanism 204m. In addition, in FIG. 1, after the adhesive holding sheet 210a is attached to the patterned substrate W, the substrate W having the pattern is placed with the side of the holding sheet 210a as the mounting surface. On the stage 204, it is not necessary to use the aspect of holding the sheet 210a.

移動機構204m，藉由未圖示之驅動手段之作用，使載台204在水平面內移動於既定之XY兩軸方向。藉此，實現觀察位置之移動或雷射光照射位置之移動。另外，關於移動機構204m，在進行對準等方面，更佳為：亦可與水平驅動獨立地進行以既定之旋轉軸為中心之在水平面內之旋轉(θ旋轉)動作。 The moving mechanism 204m moves the stage 204 in a horizontal plane in a predetermined XY two-axis direction by a driving means (not shown). Thereby, the movement of the observation position or the movement of the laser light irradiation position is achieved. Further, in the moving mechanism 204m, it is more preferable to perform the rotation (θ rotation) operation in the horizontal plane centering on the predetermined rotation axis independently of the horizontal drive.

照射光學系統205，具備雷射光源SL、於省略圖示之鏡筒內具備之半反射鏡(half-mirror)251、以及聚光透鏡252。 The illumination optical system 205 includes a laser light source SL, a half-mirror 251 provided in a lens barrel (not shown), and a collecting lens 252.

在雷射加工裝置200中，概略地，係在使從雷射光源SL發出之雷射光LB藉由半反射鏡251反射之後，使該雷射光LB以藉由聚光透鏡252聚焦於載置在載台204之具有圖案之基板W之被加工部位之方式聚光，並對具有圖案之基板W進行照射。而且，藉由一邊以所述之態樣照射 雷射光LB、一邊使載台204移動，成為可對具有圖案之基板W進行沿著既定之加工預定線之加工。亦即，雷射加工裝置200，係藉由使雷射光LB對具有圖案之基板W相對地進行掃描而進行加工之裝置。 In the laser processing apparatus 200, roughly, after the laser light LB emitted from the laser light source SL is reflected by the half mirror 251, the laser light LB is focused by being placed on the laser beam 252. The patterned substrate W of the stage 204 is condensed so as to irradiate the patterned substrate W. Moreover, by illuminating in the same manner as one side The laser light LB moves the stage 204 to process the substrate W having the pattern along a predetermined planned line. That is, the laser processing apparatus 200 is a device that performs processing by scanning the laser light LB to the substrate W having the pattern.

作為雷射光源SL，較佳之態樣係使用Nd：YAG雷射。作為雷射光源SL，使用波長為500nm~1600nm者。此外，為了實現上述之在加工圖案之加工，雷射光LB之脈衝寬度必需為1psec~50psec左右。此外，較佳為：重複頻率R係10kHz~200kHz左右，雷射光之照射能量(脈衝能量)係0.1μJ~50μJ左右。 As the laser light source SL, a preferred aspect is to use a Nd:YAG laser. As the laser light source SL, a wavelength of 500 nm to 1600 nm is used. Further, in order to realize the above-described processing of the processed pattern, the pulse width of the laser light LB must be about 1 psec to 50 psec. Further, it is preferable that the repetition frequency R is about 10 kHz to 200 kHz, and the irradiation energy (pulse energy) of the laser light is about 0.1 μJ to 50 μJ.

另外，在雷射加工裝置200中，在加工處理時，亦可根據需要而以刻意地將聚焦位置偏移具有圖案之基板W之表面之失焦狀態照射雷射光LB。在本實施形態中，較佳為：將失焦值(聚焦位置往從具有圖案之基板W表面朝向內部之方向之偏移量)設定成0μm以上、30μm以下之範圍。 Further, in the laser processing apparatus 200, at the time of processing, the laser beam LB may be irradiated with a defocusing state in which the focus position is intentionally shifted from the surface of the substrate W having the pattern as needed. In the present embodiment, it is preferable to set the out-of-focus value (the amount of shift of the focus position from the surface of the patterned substrate W toward the inside) to a range of 0 μm or more and 30 μm or less.

此外，在雷射加工裝置200中，於載台204之上方，具備有用以從上方對具有圖案之基板W進行觀察、拍攝之上部觀察光學系統206、以及從載台204之上方對具有圖案之基板W照射照明光之上部照明系統207。此外，於載台204之下方，具備有從載台204之下方對具有圖案之基板W照射照明光之下部照明系統208。 Further, in the laser processing apparatus 200, above the stage 204, it is provided to observe the patterned substrate W from above, to photograph the upper observation optical system 206, and to have a pattern from above the stage 204. The substrate W illuminates the illumination light upper illumination system 207. Further, below the stage 204, an illumination system 208 for illuminating the lower surface of the patterned substrate W from below the stage 204 is provided.

上部觀察光學系統206，具備設置於半反射鏡251之上方(鏡筒之上方)之CCD攝影機206a、及與該CCD攝影機206a連接之顯示器206b。此外，上部照明系統207，具備上部照明光源S1、及半反射鏡271。 The upper observation optical system 206 includes a CCD camera 206a disposed above the half mirror 251 (above the lens barrel) and a display 206b connected to the CCD camera 206a. Further, the upper illumination system 207 includes an upper illumination light source S1 and a half mirror 271.

該等上部觀察光學系統206與上部照明系統207，與照射光學系統205同軸地構成。若更詳細而言，照射光學系統205之半反射鏡251 與聚光透鏡252，成為與上部觀察光學系統206及上部照明系統207共用。藉此，從上部照明光源S1發出之上部照明光L1，在藉由設置於未圖示之鏡筒內之半反射鏡271而反射，且進一步地穿透構成照射光學系統205之半反射鏡251之後，藉由聚光透鏡252聚光而照射具有圖案之基板W。此外，在上部觀察光學系統206中，在照射上部照明光L1之狀態下，可進行穿透聚光透鏡252、半反射鏡251及半反射鏡271之具有圖案之基板W之明亮的視野像之觀察。 The upper observation optical system 206 and the upper illumination system 207 are configured coaxially with the illumination optical system 205. In more detail, the half mirror 251 of the illumination optical system 205 The condenser lens 252 is shared with the upper observation optical system 206 and the upper illumination system 207. Thereby, the upper illumination light L1 is emitted from the upper illumination light source S1, is reflected by the half mirror 271 provided in the lens barrel (not shown), and further penetrates the half mirror 251 constituting the illumination optical system 205. Thereafter, the substrate W having the pattern is irradiated by collecting light by the collecting lens 252. Further, in the upper observation optical system 206, in a state where the upper illumination light L1 is irradiated, a bright visual field image of the patterned substrate W penetrating the condensing lens 252, the half mirror 251, and the half mirror 271 can be performed. Observed.

此外，下部照明系統208，具備下部照明光源S2、半反射鏡281、及聚光透鏡282。亦即，在雷射加工裝置200中，能夠使在從下部照明光源S2射出、且藉由半反射鏡281反射之後藉由聚光透鏡282聚光之下部照明光L2，透過載台204對具有圖案之基板W照射。例如，當使用下部照明系統208時，在使下部照明光L2照射於具有圖案之基板W之狀態下，可在上部觀察光學系統206中進行該穿透光之觀察。 Further, the lower illumination system 208 includes a lower illumination light source S2, a half mirror 281, and a collecting lens 282. That is, in the laser processing apparatus 200, after the lower illumination light source S2 is emitted and reflected by the half mirror 281, the lower illumination light L2 is collected by the collecting lens 282, and the transmission stage 204 has The substrate W of the pattern is irradiated. For example, when the lower illumination system 208 is used, the observation of the transmitted light can be performed in the upper observation optical system 206 in a state where the lower illumination light L2 is irradiated onto the substrate W having the pattern.

進一步地，如圖1所示，在雷射加工裝置200中，亦可具備用於從下方對具有圖案之基板W進行觀察、拍攝之下部觀察光學系統216。下部觀察光學系統216，具備設置於半反射鏡281之下方之CCD攝影機216a、及與該CCD攝影機216a連接之顯示器216b。在所述之下部觀察光學系統216中，例如，可在上部照明光L1照射具有圖案之基板W之狀態下進行該穿透光之觀察。 Further, as shown in FIG. 1 , the laser processing apparatus 200 may be provided with an imaging optical system 216 for observing the patterned substrate W from below and imaging the lower portion. The lower observation optical system 216 includes a CCD camera 216a disposed below the half mirror 281 and a display 216b connected to the CCD camera 216a. In the lower observation optical system 216, for example, the observation of the transmitted light can be performed in a state where the upper illumination light L1 is irradiated with the substrate W having the pattern.

控制器201，進一步具備：控制部202，係控制裝置各部之動作，使其實現以下述之態樣之具有圖案之基板W之加工處理；及儲存部203，係儲存控制雷射加工裝置200之動作之程式203a或在加工處理時所參 照之各種資料。 The controller 201 further includes a control unit 202 that controls the operation of each unit of the control unit to realize processing of the patterned substrate W in the following manner; and a storage unit 203 that stores and controls the laser processing apparatus 200 The program 203a of the action or the reference during processing According to various information.

控制部202，例如係藉由個人電腦或微電腦等之泛用之電腦而實現者，藉由由該電腦讀取、執行儲存於儲存部203之程式203p，將各種之構成元件作為控制部202之功能性構成元件而加以實現。 The control unit 202 is realized by, for example, a general-purpose computer such as a personal computer or a microcomputer, and the various components are used as the control unit 202 by reading and executing the program 203p stored in the storage unit 203 by the computer. The functional components are implemented.

儲存部203，藉由ROM或RAM及硬碟等之儲存媒介實現。另外，儲存部203，亦可係藉由實現控制部202之電腦之構成元件而實現之態樣，且硬碟之情形等，亦可設於與該電腦為不同體之態樣。 The storage unit 203 is realized by a storage medium such as a ROM or a RAM and a hard disk. Further, the storage unit 203 may be realized by realizing a constituent element of a computer of the control unit 202, and the hard disk may be provided in a different form from the computer.

於儲存部203，除了程式203p之外、除了被作為加工對象之具有圖案之基板W之個體資訊(例如，材質、結晶方位、形狀(尺寸、厚度)等)之外，亦儲存記述有加工位置(或路徑位置)之被加工物資料D1，並且儲存加工模式設定資料D2，該加工模式設定資料D2係記述有對應各個加工模式之雷射加工態樣之關於雷射光之各個參數之條件或載台204之驅動條件(或該等之可設定範圍)等。 In the storage unit 203, in addition to the program 203p, in addition to the individual information (for example, material, crystal orientation, shape (size, thickness), etc.) of the substrate W having the pattern to be processed, the processing position is also stored. (or path position) of the workpiece data D1, and storing the machining mode setting data D2, which describes the conditions or loads of the respective parameters of the laser light corresponding to the laser machining mode of each machining mode. The driving conditions of the station 204 (or such configurable ranges) and the like.

控制部202，主要具備：驅動控制部221，係控制移動機構204m之載台204之驅動、或聚光透鏡252之聚焦動作等之與加工處理有關之各種驅動部分之動作；攝影控制部222，係控制上部觀察光學系統206或下部觀察光學系統216之具有圖案之基板W之觀察、拍攝；照射控制部223，係控制來自雷射光源SL之雷射光LB之照射；吸附控制部224，係控制吸引手段211進行之具有圖案之基板W往載台204之吸附固定動作；以及加工處理部225，係根據所賦予之被加工物資料D1及加工模式設定資料D2而執行往加工對象位置之加工處理。 The control unit 202 mainly includes a drive control unit 221 that controls the driving of the stage 204 of the moving mechanism 204m or the operation of various driving portions related to the processing such as the focusing operation of the collecting lens 252, and the imaging control unit 222. Control and observation of the patterned substrate W of the upper observation optical system 206 or the lower observation optical system 216; the illumination control unit 223 controls the illumination of the laser light LB from the laser light source SL; and the adsorption control unit 224 controls The processing unit 225 performs the processing of attaching and processing the substrate to the processing target position D1 and the processing mode setting data D2 by the suction means 211. .

在具備如以上之構成之控制器201之雷射加工裝置200中， 一旦由操作者賦予將記述於被加工物資料D1之加工位置作為對象的既定之加工模式之加工執行指示，則加工處理部225，取得被加工物資料D1、並且從加工模式設定資料D2中取得對應所選擇之加工模式之條件，以執行對應該條件之動作之方式，對通過驅動控制部221或照射控制部223等而對應之各部之動作進行控制。例如，從雷射光源SL發出之雷射光LB之波長或功率、脈衝之重複頻率、脈衝寬度之調整等，藉由照射控制部223實現。藉此，在成為對象之加工位置，以所指定之加工模式實現加工。 In the laser processing apparatus 200 having the controller 201 having the above configuration, When the operator gives an instruction to execute the machining of the predetermined machining mode to be described as the machining position of the workpiece data D1, the machining processing unit 225 acquires the workpiece data D1 and obtains it from the machining mode setting data D2. The operation of each unit corresponding to the drive control unit 221 or the illumination control unit 223 is controlled in accordance with the condition of the selected machining mode by executing the operation corresponding to the condition. For example, the wavelength or power of the laser light LB emitted from the laser light source SL, the repetition frequency of the pulse, the adjustment of the pulse width, and the like are realized by the irradiation control unit 223. Thereby, the machining is performed in the specified machining mode at the machining position to be the target.

此外，較佳為，雷射加工裝置200，以如下方式構成：藉由加工處理部225之作用而在控制器201中對操作者提供可利用之加工處理選單，藉此可選擇對應各種之加工內容之加工模式。在所述情形中，加工處理選單較佳為以GUI提供者。 Further, it is preferable that the laser processing apparatus 200 is configured to provide an operator with a process processing menu available to the operator by the action of the processing unit 225, thereby selecting a corresponding processing. The processing mode of the content. In this case, the processing menu is preferably provided as a GUI provider.

藉由如以上之構成，雷射加工裝置200，成為可適當地進行以上述之龜裂伸展加工為起始之各種之雷射加工。 According to the above configuration, the laser processing apparatus 200 can appropriately perform various types of laser processing starting from the above-described crack propagation processing.

如至此為止之說明般，根據本實施形態，在藉由雷射光之龜裂伸展加工而欲進行用以將在單結晶基板之緊鄰上方具備多層膜與由金屬膜構成之反射膜之具有圖案之基板W進行單片化之分割加工的情形，於所述之龜裂伸展加工之前，預先僅去除位於加工預定線之部位之金屬膜並使多層膜露出。藉此，實現良好之單片化。 As described above, according to the present embodiment, it is intended to perform a pattern of a reflective film composed of a multilayer film and a metal film directly adjacent to a single crystal substrate by crack propagation processing of laser light. In the case where the substrate W is subjected to the dicing process, only the metal film located at the portion of the planned line is removed and the multilayer film is exposed before the crack propagation process. Thereby, good singulation is achieved.

AR1‧‧‧箭頭 AR1‧‧‧ arrow

CP‧‧‧元件晶片 CP‧‧‧ component chip

CR、CR1、CR2‧‧‧龜裂 CR, CR1, CR2‧‧‧ crack

F1‧‧‧多層膜 F1‧‧‧multilayer film

F2‧‧‧金屬膜 F2‧‧‧ metal film

G‧‧‧加工溝槽 G‧‧‧Processing trenches

LB‧‧‧雷射光 LB‧‧‧Laser light

LF‧‧‧焦點 LF‧‧ focus

M‧‧‧加工痕 M‧‧‧ machining marks

P1‧‧‧加工預定面 P1‧‧‧Processing surface

PL‧‧‧加工預定線 PL‧‧‧Processing line

ST‧‧‧路徑 ST‧‧‧ path

TL‧‧‧溝槽加工工具 TL‧‧‧groove processing tool

TL1‧‧‧前端部 TL1‧‧‧ front end

UP‧‧‧單位圖案 UP‧‧‧ unit pattern

W‧‧‧基板 W‧‧‧Substrate

W1‧‧‧單結晶基板 W1‧‧‧Single crystal substrate

Claims (7)

一種具有圖案之基板之分割方法，係對在單結晶基板上二維地反覆配置多個單位元件圖案而構成之具有圖案之基板進行分割並單片化，其特徵在於：該具有圖案之基板，係由在該單結晶基板中與該單位元件圖案之形成面為相反側之主面反覆交互地積層相異之2個氧化膜而構成之多層膜、與金屬膜積層而成者；具備：金屬膜去除步驟，係在使前端具備刀前端之工具之該前端位於該多層膜與該金屬層之界面高度之狀態下，使該工具對該具有圖案之基板相對地移動，藉此於該具有圖案之基板沿著預先決定之加工預定線僅去除該金屬膜而形成加工溝槽；龜裂伸展加工步驟，係對已去除該金屬膜後之該具有圖案之基板，沿著該加工預定線，藉由各個單位脈衝光以在該具有圖案之基板形成之加工痕離散地位於該加工溝槽之方式照射雷射光，使龜裂於該具有圖案之基板從各個該加工痕伸展；以及裂斷步驟，係對經該龜裂伸展加工步驟之該具有圖案之基板，沿著該加工預定線進行裂斷。 A method for dividing a substrate having a pattern by dividing and singulating a substrate having a pattern in which a plurality of unit element patterns are two-dimensionally arranged on a single crystal substrate, wherein the substrate having the pattern is a multilayer film formed by alternately laminating two different oxide films on the main surface of the single crystal substrate opposite to the surface on which the unit element pattern is formed, and a metal film is laminated; The film removing step is such that the tip of the tool having the tip end of the blade is located at the height of the interface between the multilayer film and the metal layer, and the tool is relatively moved to the patterned substrate, thereby having the pattern The substrate is formed by processing only the metal film along a predetermined predetermined processing line to form a processing groove; and the crack stretching processing step is performed on the patterned substrate after the metal film has been removed, along the processing line Irradiating the laser light by each unit pulsed light in such a manner that the processing marks formed on the patterned substrate are discretely located in the processing groove, causing the crack to be patterned The substrate is stretched from each of the processing marks; and the breaking step is performed by cutting the patterned substrate through the crack stretching processing step along the planned line. 如申請專利範圍第1項之具有圖案之基板之分割方法，其中，在該龜裂伸展加工步驟中，使該雷射光之焦點位於形成有該加工溝槽之部位之緊鄰下方、且在該單結晶基板之內部於其厚度方向與該多層膜之界面位置距離數μm之範圍內。 The method for dividing a patterned substrate according to claim 1, wherein in the crack stretching processing step, the focus of the laser light is located immediately below the portion where the processing groove is formed, and in the The inside of the crystal substrate is within a range of several μm from the interface position of the multilayer film. 如申請專利範圍第1或2項之具有圖案之基板之分割方法，其中，在該金屬膜去除步驟中，一邊從該工具對該具有圖案之基板賦予0.5N以上、1.0N以下之負載，一邊使該工具移動，而對該金屬膜進行去除。 The method of dividing a substrate having a pattern according to the first or second aspect of the invention, wherein in the step of removing the metal film, a load of 0.5 N or more and 1.0 N or less is applied to the substrate having the pattern. The tool is moved to remove the metal film. 如申請專利範圍第1或2項之具有圖案之基板之分割方法，其中，該工具，具備於該前端係平坦之矩形狀之微小面即刀背緣；在該金屬膜去除步驟中，以該刀背緣成為該工具之最下端部、且其長邊方向與該工具之相對移動方向一致之方式，使該工具移動。 The method for dividing a patterned substrate according to claim 1 or 2, wherein the tool has a rectangular back surface which is flat at the front end, that is, a blade back edge; and in the metal film removing step, the blade back The tool is moved in such a manner that the edge becomes the lowermost end of the tool and the longitudinal direction thereof coincides with the relative movement direction of the tool. 如申請專利範圍第3項之具有圖案之基板之分割方法，其中，該工具，具備於該前端係平坦之矩形狀之微小面即刀背緣；在該金屬膜去除步驟中，以該刀背緣成為該工具之最下端部、且其長邊方向與該工具之相對移動方向一致之方式，使該工具移動。 The method for dividing a patterned substrate according to claim 3, wherein the tool is provided with a rectangular back surface that is flat at the front end, that is, a back edge of the blade; in the metal film removing step, the back edge of the blade is The tool is moved in such a manner that the lowermost end of the tool has a longitudinal direction that coincides with the relative movement direction of the tool. 如申請專利範圍第4項之具有圖案之基板之分割方法，其中，在將該刀背緣與該金屬膜去除步驟中之該工具之該相對移動方向前面所形成之角作為安裝角、且將該刀背緣與與其連續之該工具之長邊方向最下端面所形成之角作為刀背緣角時，該相對移動方向中之刀背緣長度係1μm以上、15μm以下；該安裝角係50°~80°；刀背緣角係10°~20°。 The method for dividing a patterned substrate according to claim 4, wherein an angle formed by the front edge of the blade and the front direction of the tool in the metal film removing step is used as a mounting angle, and When the angle formed by the back edge of the blade and the lowermost end surface of the tool in the longitudinal direction thereof is the blade back edge angle, the length of the blade back edge in the relative movement direction is 1 μm or more and 15 μm or less; the mounting angle is 50° to 80°. The angle of the back edge of the knife is 10°~20°. 如申請專利範圍第5項之具有圖案之基板之分割方法，其中，在將該刀背緣與該金屬膜去除步驟中之該工具之該相對移動方向前面所形成之角作為安裝角、且將該刀背緣與與其連續之該工具之長邊方向最下端面所形成之角作為刀背緣角時， 該相對移動方向中之刀背緣長度係1μm以上、15μm以下；該安裝角係50°~80°；刀背緣角係10°~20°。 The method for dividing a patterned substrate according to claim 5, wherein an angle formed by the front edge of the blade and the front direction of the tool in the metal film removing step is used as a mounting angle, and When the angle formed by the back edge of the blade and the lowermost end surface of the tool in the longitudinal direction thereof is the edge angle of the blade, The length of the blade back edge in the relative movement direction is 1 μm or more and 15 μm or less; the mounting angle is 50° to 80°; and the blade back edge angle is 10° to 20°.
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JP6422355B2 (en) * 2015-01-29 2018-11-14 株式会社ディスコ Alignment method
JP6520964B2 (en) * 2017-01-26 2019-05-29 日亜化学工業株式会社 Method of manufacturing light emitting device
CN106914707B (en) * 2017-03-15 2020-05-22 京东方科技集团股份有限公司 Method for cutting flexible display substrate mother board, flexible display device, display device and laser cutting machine
CN108289375A (en) * 2018-01-15 2018-07-17 深圳华麟电路技术有限公司 High-pixel camera module Rigid Flex processing method
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Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JPH09205245A (en) * 1996-01-24 1997-08-05 Nippon Telegr & Teleph Corp <Ntt> Surface emitting laser
JPH1027971A (en) * 1996-07-10 1998-01-27 Nec Corp Dicing method for organic thin film multilayer wiring board
CN1241253C (en) * 2002-06-24 2006-02-08 丰田合成株式会社 Semiconductor element and mfg method
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TWI501415B (en) * 2009-02-24 2015-09-21 Mitsuboshi Diamond Ind Co Ltd A trench processing tool, a trench processing method and a cutting device using a thin film solar cell
KR101769158B1 (en) * 2009-04-07 2017-08-17 하마마츠 포토닉스 가부시키가이샤 Laser machining device and laser machining method
JP5056839B2 (en) 2009-12-25 2012-10-24 三星ダイヤモンド工業株式会社 Workpiece processing method and workpiece division method
JP2011142235A (en) * 2010-01-08 2011-07-21 Mitsuboshi Diamond Industrial Co Ltd Groove machining tool for thin film solar cells
JP5670647B2 (en) * 2010-05-14 2015-02-18 浜松ホトニクス株式会社 Processing object cutting method
JP5528904B2 (en) * 2010-05-20 2014-06-25 株式会社ディスコ Method for dividing sapphire wafer
JP5687864B2 (en) * 2010-08-10 2015-03-25 株式会社ディスコ Method for dividing sapphire wafer
TWI469842B (en) * 2010-09-30 2015-01-21 Mitsuboshi Diamond Ind Co Ltd Laser processing apparatus, processing method of processed products and dividing method of processed products
JP5548143B2 (en) * 2011-01-25 2014-07-16 三星ダイヤモンド工業株式会社 LED chip manufacturing method
JP2012238746A (en) * 2011-05-12 2012-12-06 Disco Abrasive Syst Ltd Division method of optical device wafer
CN102500933A (en) * 2011-11-07 2012-06-20 苏州德龙激光有限公司 Laser machining method for matching with light-emitting diode (LED) inner cutting process

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