TWI558996B - System and method for capturing illumination reflected in multiple directions - Google Patents

Description

System and method for capturing light reflected from multiple directions

The present invention is directed to a wafer inspection process. More particularly, the present invention relates to automated systems and methods for detecting semiconductor components.

The ability to ensure the high quality of semiconductor components such as semiconductor wafers and die is increasingly important in the semiconductor industry. The semiconductor wafer processing technology has been consistently improved to integrate into the tiny surface area of the semiconductor wafer to increase the number of features. Accordingly, the use of photolithographic imaging processing of semiconductor wafer processing to allow integration of increased features to the microscopic surface area of semiconductor wafers (i.e., high performance of semiconductor wafers) has become more complex. Therefore, the size of the potential germanium on a semiconductor wafer is typically in the micron range to the submicron range.

Clearly, the fabrication of semiconductor wafers is increasingly demanding improvements in semiconductor wafer quality control and detection procedures to ensure high quality of semiconductor wafer uniformity. Semiconductor wafers are typically used to detect inspections of their upper defects, such as surface particles, flaws, ripples, and other irregularities. Such defects can affect the final performance of the semiconductor wafer. Therefore, the key is to eliminate or capture germanium semiconductor wafers during semiconductor wafer fabrication.

Semiconductor detection systems and programs continue to advance. For example, high-resolution imaging systems, fast calculations, and enhanced precision mechanical operating systems are already in use. In addition, semiconductor wafer inspection systems, methods, and techniques have utilized at least one bright region luminance, dark region luminance, and spatial filtering techniques.

Using the bright-area image, the tiny particles on the semiconductor wafer are scattered by the collecting aperture of the image capture device, thereby reducing the return energy to the image capture device. When the particle's spread function is small compared to a lens or a digital pixel, the bright region energy from the closest area around the particle typically provides a large amount of energy relative to the particle, making the particle difficult to inspect. In addition, a slight decrease in energy is usually obscured by the change in the reflectivity of the closest area around the particle, which results in an increase in the occurrence of erroneous defects. In order to overcome the above phenomenon, the semiconductor detection system has been equipped with a high-resolution camera with a high resolution, which captures an image of a small surface area of the semiconductor wafer. However, when detecting dark spots, bright area images typically have better pixel contrast and help estimate the size of the file.

Dark area brightness and its advantages are well known to those skilled in the art. Dark area images have been used in several existing semiconductor wafer inspection systems. Dark area images are typically examined based on the angle at which the ray is incident on the object. At low angles of the object's horizontal plane (eg, 3 to 30 degrees), dark-area images typically produce dark images, except at the location of the ridges, such as surface particles, ridges, and other irregularities. The dark area image that is specifically used can be illuminated to a size smaller than the resolution of the lens used to produce the bright area image. At angles above the horizontal (eg, 30 to 85 degrees), dark areas images typically produce contrast images that are better than bright areas. The use of such high angle dark area images enhances the contrast of irregular surfaces on mirror polished or transparent objects. In addition, high-angle dark-area images enhance the image of the tilted object.

The ability of a semiconductor wafer to reflect light typically has a significant effect on the image quality obtained with each bright and dark image. The small amount and large amount of structure present on the semiconductor wafer affects the light reflecting ability of the semiconductor wafer. Generally, the amount of light reflected by the semiconductor wafer is the direction or angle of the incident light, the viewing direction of the surface of the semiconductor wafer, and the ability of the light to reflect. The light reflection capability is based on the wavelength of the incident light and the material composition of the semiconductor wafer.

It is often difficult to control the ability to detect light reflections present in a semiconductor wafer. This is because semiconductor wafers may consist of several layers of material. The material of each layer can, for example, transmit wavelengths of different light differently at different speeds. In addition, the layers can have different light transmittances, or even reflective capabilities. Accordingly, those of ordinary skill in the art will readily recognize that the use of light or brightness at a single wavelength or a narrow wavelength is generally not conducive to affecting the quality of the captured image. The need for single wavelength or narrowband wavelength frequency modification requires the use of multiple spatial filters or wavelength adjusters, which can often be inconvenient. To alleviate this problem, it is important to use broadband brightness (i.e., brightness of a wide-area wavelength), for example, a wide-band brightness in the wavelength range between 300 nm and 1000 nm.

Currently available wafer inspection systems or devices typically use one of the following methods: to implement or capture multiple responses during wafer inspection:

(1) Multiple Image Capture Devices with multiple brightness (MICD, Multiple Image Capture Devices)

The multiple image capture device uses a plurality of image capture devices and a plurality of brightnesses. The multiple image capture device is based on the principle that the split wavelength spectrum is a narrow frequency, and the wavelength spectrum of each segment is assigned to a separate luminance. During the design of the system utilizing the multiple image capture device method, each image capture device is paired with a corresponding brightness (i.e., source of brightness), along with a corresponding optical accessory, such as a spatial filter or a specially coated beam splitter. For example, the wavelength of the brightness of the bright areas is limited to between 400 and 600 nm using mercury lamps and spatial filters, and the dark area brightness is limited to between 650 and 700 nm using lasers. The shortcomings of the multiple image capture device approach, such as poor image quality and lack of flexibility in design. Poor image quality is due to the ability to change the surface reflection of the wafer, using a combination of narrow wavelengths. The lack of flexibility in design occurs because the modification of a single brightness wavelength typically requires reorganization of the overall optical steps of the wafer inspection system. In addition, the multiple image capture device method generally does not allow a single image capture device to change the wavelength to capture brightness without sacrificing the quality of the captured image.

(2) Single Image Capture Device with multiple brightness (SICD, Single Image Capture Device)

The single image capture device method uses a segmented wavelength or a wide wavelength to capture a single image capture device of multiple brightness. However, when the wafer is moving, a single image capture device approach cannot simultaneously achieve multiple brightness responses. In other words, the single image capture device method allows only one brightness response when the wafer is moving. To achieve multiple brightness responses, a single image capture device approach requires image capture when the wafer is stationary, which affects the productivity of the wafer inspection system.

A semiconductor wafer inspection system utilizing a wide-band bright area and a dark area or a general multiple brightness and simultaneous, independent, on-the-fly image capture using multiple image capture devices is not currently available Due to the relative lack of understanding of practical applications and operational advantages. Existing semiconductor wafer inspection systems utilize multiple image capture devices or single image capture devices as explained earlier. Devices that utilize multiple image capture devices do not use broadband brightness and do not produce poor image quality and unchangeable system settings. In other words, devices that use a single image capture device experience reduce system productivity and often do not achieve simultaneous simultaneous multiple brightness responses.

A semiconductor wafer optical detection system utilizing brightness in a bright region and brightness in a dark region is disclosed in U.S. Patent No. 5,822,055 (KLA1). An embodiment of the optical detection system disclosed in KLA1 utilizes a multiple image capture device as explained earlier. It uses multiple cameras to capture bright and dark areas of the semiconductor wafer. The bright and dark areas of the image are then separated or processed together on the semiconductor wafer for detection. In addition, KLA1's optical detection system simultaneously captures bright areas and dark areas of the respective sources using bright areas and dark areas. KLA1 achieves the use of both the luminance wavelength spectrum for the bright and dark image capture, the narrow-band luminance source, and the simultaneous image capture of the spatial filter segments. In the KLA1 optical system, one of the cameras is used to receive dark-area images using narrow-band lasers and spatial filters. Another camera is used to receive the remaining wavelength spectrum using the brightness of the bright areas and the beam splitter with a particular coating. Disadvantages of the optical detection system disclosed by KLA1 include its unsuitability for use in photographic imaging of semiconductor wafers that vary widely due to surface reflections of wavelength spectral segments. The camera systems are each tightly coupled to brightness and do not have the flexibility to combine more than one available brightness to enhance a particular wafer pattern. One of such types is that it has a carbon coating layer at its front end, and it exhibits poor reflection characteristics at a specific brightness angle, such as using a bright area alone. It needs to combine the bright areas as well as the high angle dark areas to observe a particular flaw. Accordingly, KLA1's optical detection system requires multiple sources of light or luminance for performing multiple detection channels (multiple scans, which in turn affect system productivity) and filters to capture multiple bright and dark areas. .

In addition, the specific optical detection system utilizes bright areas and dark area images disclosed in U.S. Patent No. 6,826,298 (AUGTECH) and U.S. Patent No. 6,937,753 (AUGTECH 2). The dark areas of the AUGTECH1 and AUGTECH2 optical detection systems utilize a plurality of lasers in the low-angle dark-area image and fiber-optic ring light in the high-angle dark-area image. In addition, AUGTECH 1 and AUGTECH 2 optical detection systems use a single camera sensor and are a single image capture device method explained earlier. Accordingly, the semiconductor wafers detected in AUGTECH1 and AUGTECH2 are executed by bright area images or by dark area image or by combination of bright area images and dark area images, when bright area images or dark area images are completed. , the other is executed. AUGTECH1 and AUGTECH2's detection systems do not have the ability to simultaneously, instantly or when the wafer is moving and in separate bright and dark areas. Accordingly, multiple channels of each semiconductor wafer need to complete their detection, resulting in lower manufacturing productivity and excessive use of resources.

In addition, several existing optical detection systems utilize gold or reference images that are similar to newly acquired semiconductor wafer images. Deriving the resulting reference image typically requires capturing several images of known or manually selected "good" semiconductor wafers, and then applying statistical formulas or techniques to derive the reference image. The disadvantages of the above derivations are inaccuracies or inconsistencies in manually selecting "good" semiconductor wafers. The use of such reference images by optical detection systems typically results in the erroneous discarding of semiconductor wafers due to inaccurate or inconsistent reference images. The increasingly complex circuit patterns of semiconductor wafers rely on the derivation of reference images to manually select "good" semiconductor wafer systems that are increasingly incompatible with the high quality standards set by the semiconductor detection industry.

The derivation of the gold reference image contains many statistical techniques as well as calculations. Most statistical techniques are commonplace and have their own advantages. The state of the art of currently available devices is the use of an average or intermediate along with the standard deviation to calculate the gold reference pixels. Such a method works well with known good pixels; conversely, any chirp or noise pixel can interfere with and affect the final average or intermediate value of the reference pixel. Other methods use a median, and this method has reduced interference due to noise pixels, but it is substantially impossible to eliminate the effects of noise. All available devices attempt to apply different kinds of statistical techniques to reduce errors, such as averaging, median, etc., but they do not have any specific or user friendly sequences to eliminate errors. This particular sequence does help to eliminate pixels that may affect the final reference pixel value.

U.S. Patent No. 6,324,298 (AUGTECH 3) discloses a training method for establishing a gold reference or reference image for use in semiconductor wafer inspection. The method disclosed in AUGTECH3 requires "known good quality" or "innocent" wafers. The choice of such wafers is performed manually or by the user. A statistical formula or technique is then applied to derive the reference image. For its part, the accurate and consistent selection of "good quality" wafers is important for accurate and consistent quality of semiconductor detection. Furthermore, AUGTECH 3 uses the average and standard deviation to calculate individual pixels of the reference image, and the presence of any 瑕疵 pixels will result in inaccurate reference pixels.瑕疵 Pixels occur due to foreign objects or other defects, which can confuse statistical calculations and result in inaccurate reference pixels. It is apparent to those skilled in the art that the AUGTECH 3 method has the potential for inaccuracies, inconsistencies, and errors in semiconductor wafer inspection.

In addition, the optical detection system disclosed in AUGTECH 3 uses a flash or strobe lamp for illuminating a semiconductor wafer. Those skilled in the art will appreciate that inconsistencies between different flash or strobe light bulbs may occur due to a number of factors including temperature, differences, inconsistencies in electronic handling, and different flash or strobe light bulb strengths, but are not limited thereto. Such differences and inconsistencies are inherent, even for "good" semiconductor wafers. If the system does not pay attention to such differences due to the flash, the presence of such differences may affect the quality of the gold reference image. In addition, variations in brightness intensity and uniformity between the surfaces of the semiconductor wafer are not limited thereto due to factors including wafer, mounting, and flatness of light reflecting ability at different positions on the surface. Regardless of the variation in flash intensity and the characteristics of the strobe of the lamp, any reference image produced in the above manner may be unreliable and inaccurate when using images captured at different locations than the semiconductor wafer.

Changes in the product specifications, such as semiconductor wafer size, complexity, surface reflectivity, and standards for quality detection are common in the semiconductor industry. Accordingly, semiconductor wafer inspection systems and methods need to have the ability to detect such changes in the product specification. However, existing semiconductor wafer inspection systems and methods generally do not have satisfactory ability to detect such variations in the product specification, particularly as the semiconductor industry sets increasingly higher quality standards.

For example, conventional semiconductor wafer inspection systems typically use conventional optical assemblies, including components such as cameras, illuminators, filters, polarizers, mirrors, and lenses, which have a fixed spatial position. The use or removal of components of an optical assembly typically requires rearranging and redesigning the entire optical assembly. Accordingly, such semiconductor wafer inspection systems have an unalterable design or configuration and require a relatively long lead-time for modifying the semiconductor wafer inspection system. Moreover, conventional optical assemblies and the distance between the target lenses used to detect the presence of semiconductor wafers are typically too short to allow for easy introduction of fiber optic brightness at different angles of dark zone brightness.

There are many other existing semiconductor wafer inspection systems and methods. However, due to the current lack of technical experience and operating techniques, existing wafer inspection systems cannot simultaneously utilize bright and dark areas for detection while the wafer is moving, while still maintaining design flexibility. In order to save resources, flexibility, accuracy and rapid detection of semiconductor wafers, there is also a need for semiconductor wafer detection systems and methods. In particular, given the increasing complexity of semiconductor wafer circuits and the increasing quality standards of the semiconductor industry.

The current lack of semiconductor wafers can simultaneously utilize bright and dark areas and independently perform semiconductor wafer detection systems and methods while providing flexible design and configuration. In addition, components of the semiconductor wafer inspection system, such as illuminators, cameras, target lenses, filters, and mirrors, are also required, with flexibility and adjustable spatial positions relative to each other. The increasing complexity of semiconductor wafer circuits and the higher quality standards set by the semiconductor industry are increasingly critical to the accuracy and consistency of semiconductor wafer inspection.

The present invention provides a detection apparatus, apparatus, system, method and/or process for detecting semiconductor components, including semiconductor wafers, dies, LED wafers, and solar wafers, but is not limited thereto.

According to a first aspect of the present invention, the apparatus disclosed includes a set of illuminators for providing brightness, and the brightness supplied by the set of illuminators is directed to a detection position corresponding to the detection surface. The brightness is reflected off the surface in at least the first direction and the second direction. The apparatus also includes a first set of reflectors configured to receive brightness that is reflected off the surface in the first direction and to point to the received brightness along the first reflected brightness path, and a second set of reflectors, settings, and The brightness is reflected from the surface in the second direction and the received brightness is directed along the second reflected brightness path. In addition, the apparatus includes an image capture device for simultaneously receiving brightness along each of the first and second reflected luminance travel paths, thereby providing a first response and a second response, respectively.

In accordance with a second aspect of the present invention, a method for detecting a surface is disclosed. The method includes directing a brightness toward a detected position corresponding to the detecting surface, and reflecting the brightness of the leaving surface in the at least one first direction and the second direction. Additionally, the method includes directing the brightness of the exiting surface in the first direction and the second direction along the first reflective luminance travel path and the second reflective luminance travel path. Moreover, the method includes simultaneously receiving luminances traveling along each of the first and second reflected luminance travel paths of the image capture device to generate first and second respective respective first and second reflected luminance travel paths Respond.

In accordance with a third aspect of the present invention, an optical system is disclosed that includes a set of illuminators for providing brightness to a surface corresponding to a detected position, the brightness comprising a first brightness incident on the surface at a first angle of the surface a light beam, and a second light beam incident on the surface at a second angle different from the first angle. The optical system also includes an image capture device for simultaneously receiving the first and second light beams along the optical axis of the image capture device, reflecting the brightness away from the surface.

According to a fourth aspect of the present invention, a method is disclosed, including providing a first light beam of a brightness to a detection position of a corresponding surface, a first beam of brightness incident on the surface at a first angle, and a second beam providing brightness Upon incidence onto the surface, the second beam of brightness is incident on the surface at a second angle different from the first angle. Additionally, the method includes first and second light beams that reflect brightness from the surface, and first and second light beams that are simultaneously reflected by the image capture device.

The detection of semiconductor components, such as semiconductor wafers and dies, is an increasingly critical step in the fabrication or processing of semiconductor components. The increasing complexity of semiconductor wafer circuits, coupled with improved quality standards for semiconductor wafers, has led to an increase in demand for improved semiconductor wafer inspection systems and methods. In view of the increasingly complex semiconductor wafer circuits and the improved quality standards developed by the semiconductor industry, the accuracy and consistency of semiconductor wafer inspection is increasingly critical. In particular, it is increasingly important to identify the accuracy and consistency of defects that may be present on a semiconductor wafer.

The present invention relates to systems, devices, devices, methods, processes, and techniques for detecting devices, such as semiconductor components for locating at least one of the above problems.

For the sake of brevity and clarity, the description of the disclosed embodiments is limited to systems, devices, apparatus, methods, processes, and techniques that are later used to detect semiconductor wafers. However, it will be apparent to those skilled in the art that other applications disclosed herein are not excluded, and the basic principles thereof are generally disclosed in various embodiments of the present disclosure, such as required operational, functional or performance characteristics. For example, the systems, devices, devices, methods, processes, and techniques provided by the various embodiments of the present invention can be used to detect other semiconductor components, including semiconductor dies, LED wafers, and solar wafers or devices, but are not limited thereto.

1 and 2 show an exemplary system 10 for detecting a semiconductor wafer 12 provided by a particular embodiment of the present invention. 3 through 8 show various aspects or elements of system 10 in accordance with various embodiments of the present disclosure.

System 10 can also be used to detect other forms of devices or components (e.g., semiconductor devices or components). In many embodiments, system 10 includes an optical detection head 14 (as shown in FIG. 3), a wafer carrier or wafer chuck 16 (as shown in FIG. 4), and a mechanical wafer handling device 18 (eg, Figure 5), wafer stacking module 20 (as shown in Figure 6) or diaphragm holder, XY replacement disk 22 and at least one set of four vibration isolation stations 24 (as shown in Figure 1 and Figure 2) Figure shows).

As shown in Figures 7 and 8, in various embodiments, the optical detection head 14 includes illuminators, such as two, three, four or more illuminators, some image capture devices, such as two , three, four or more image capture devices.

The detection process typically involves retrieval by an image capture device of one or more systems. In various embodiments, the response may be defined as capturing brightness (eg, capturing an optical signal or capturing an image) having properties or transporting a two-dimensional (2D) corresponding to or indicating a particular portion or region of the wafer or substrate surface (2D) ) or three-dimensional (3D) aspect of the information content. In addition, alternatively, the response may be defined as brightness, which has a property or informational content that corresponds or is represented as a 2D or 3D aspect of a portion of the surface that interacts with the surface portion due to brightness and surface conditions. Typically, the response includes or corresponds to brightness or image material having properties or informational content that can be used to determine or estimate a particular 2D or 3D characteristic of a portion of the wafer.

In many embodiments, the optical detection head 14 includes a bright area illuminator 26 (also known as a bright area luminance emitter), a low angle dark area illuminator 28 (also known as a dark area low angle brightness emitter), and a high angle. Dark area illuminator 30 (also known as dark area high angle brightness emitter). Additional dark area illuminators can be integrated into system 10, for example depending on the particular functionality of system 10. In various embodiments, the low angle dark zone illuminator 28 and the high angle dark zone illuminator 30 can be integrated into a single dark zone illuminator that can be flexibly positioned.

Bright area illuminator 26, also known as a bright area brightness source or a bright area brightness emitter, emits or provides bright area brightness or light. The bright area illuminator 26 is, for example, a flash lamp or a white light emitting diode. In several embodiments of the present disclosure, bright-area illuminator 26 provides broadband bright-area brightness having wavelengths generally between and including 300 nm and 1000 nm. However, one skilled in the art will appreciate that bright region brightness can have two wavelengths as well as optical properties.

In several embodiments of the present disclosure, the bright zone illuminator 26 includes a first optical fiber (not shown) through which the bright zone luminance passes before being emitted from the bright zone illuminator 26. The first optical fiber serves as a waveguide for guiding the direction of the bright region luminance. In several embodiments of the present disclosure, the first optical fiber facilitates the direction in which the bright region illuminator 26 emits the brightness of the bright region. The low angle dark zone illuminator 28 and the high angle dark zone illuminator 30 may also be referred to as dark zone brightness emitters or dark zone brightness sources, as well as emitting or providing dark zone brightness. Typically, dark area illuminators are carefully aligned or set to minimize the amount of light that is directly transmitted (or unscattered) into the light corresponding to the image capture device. Typically, image capture devices for capturing dark-area images receive only light or light that has been scattered by a sample or object (eg, reflected at an angle away from the surface of the sample). Dark area images typically have image contrasts that are enhanced compared to bright area images. The brightness of the bright area and the brightness of the dark area are examples of contrast brightness.

The low angle dark zone illuminator 28 and the high angle dark zone illuminator 30 are, for example, flash lamps or white light emitting diodes. In many of the embodiments disclosed herein, the dark area brightness provided by each of the low angle dark zone illuminator 28 and the high angle dark zone illuminator 30 is an optical property that is substantially similar to the brightness of the bright spot. In some embodiments, the dark region luminance provided by each of the low angle dark region illuminator 28 and the high angle dark region illuminator 30 is a broadband dark region luminance having a wavelength substantially between and including 300 nm to 1000 nm. That is, both the bright area brightness and the dark area brightness of system 10 are broadband brightness in several embodiments disclosed herein. In addition, low angle dark zone illuminator 28 and high angle dark zone illuminator 30 provide dark zone brightness of different wavelengths or other optical properties.

In many embodiments, the low-angle dark-area illuminator 28 is placed at a lower angle than the high-angle dark-area illuminator 30, placed on the level of the semiconductor wafer 12 on the wafer table 16 (or placed in the crystal) The horizontal plane of the round table 16).

In some embodiments, the low angle dark zone illuminator 28 is disposed at an angle between about three and thirty degrees of the horizontal plane of the semiconductor wafer 12 placed on the wafer table 16, and the high angle dark zone illuminator The 30 series is disposed at an angle between about thirty and eighty-five degrees of the horizontal plane of the semiconductor wafer 12 placed on the wafer table 16. The above angles may be determined and varied by adjusting the position of each of the low angle dark zone illuminators 28 and the high angle dark zone illuminators 30, as desired, for example, depending on the function or characteristics of the system 10.

In several embodiments, the low angle dark zone illuminator 28 and the high angle dark zone illuminator 30 each include second and third optical fibers (not shown) through which dark zone brightness passes prior to transmission. The second and third fibers act as waveguides for directing the dark region brightness through the direction of each of the low angle dark zone illuminators 28 and the high angle dark zone illuminators 30. In addition, the second fiber facilitates the dark region luminance direction from the low angle dark region illuminator 28, and the third fiber facilitates the dark region brightness of the emitted light directed by the high angle dark region illuminator 30. The brightness supplied by each bright area illuminator 26, low angle dark area illuminator 28, and high angle dark area illuminator 30 can be controlled and can be supplied continuously or with pulse waves.

In various embodiments, the brightness of the bright area and the wavelength spectrum of the dark area brightness increase the accuracy of wafer 12 detection and inspection. Broadband brightness is able to identify a wide range of wafer defects in a variety of surface reflection capabilities. Moreover, in certain embodiments, similar broadband wavelengths for bright region luminance and dark region luminance (eg, low angle dark region luminance and high angle dark region luminance) have the ability to perform wafer 12 detection of independent wafer 12 reflection characteristics. . Accordingly, in certain embodiments, inspection of the germanium on wafer 12 may not have undesirable effects due to different sensitivities, reflective capabilities, or due to the polarity of wafer 12 of different brightness wavelengths.

In many embodiments of the present disclosure, the brightness of the bright areas and the intensity of the dark area brightness, respectively supplied by the bright area illuminator 26 and the dark area illuminators 28, 30, may be selected and varied according to the needs of the characteristics of the wafer 12, such as The material of the wafer 12. In addition, the brightness of each of the bright areas and the intensity of the dark areas may be based on enhancing the image quality captured by the wafer 12 and enhancing the detection selection and changes of the wafer 12.

As shown in FIGS. 7-8, in various embodiments, system 10 further includes a first image capture device 32 (ie, a first camera) and a second image capture device 34 (ie, a second camera).

In most embodiments, each of the first image capturing device 32 and the second image capturing device 34 has a brightness of the bright area supplied by the bright area illuminator 26 and by each low angle dark area illuminator 28 and The high angle dark zone illuminator 30 provides the ability to illuminate dark areas. The bright area and the dark area brightness of the first image capturing device 32 received or entered by the first image capturing device 32 are focused on the first image capturing plane for capturing the corresponding image. The bright area and the dark area brightness of the second image capturing device 34 received or entered by the second image capturing device 34 are focused on the second image capturing plane for capturing the corresponding image.

The first image capturing device 32 and the second image capturing device 34 capture monochrome or color images. In many embodiments, the ability to capture the color image of the wafer 12 using the single or three wafer color sensors obtained by the image capture device 32 and the at least one accuracy and speed of the enhanced flaw check are used. For example, the ability to capture a color image of wafer 12 can help reduce false inspections of defects on wafer 12, as well as their corresponding false drops.

In many embodiments, optical detection head 14 includes a first tubular lens or tubular lens assembly 36 for use with first image capture device 32. Moreover, in most embodiments, the optical detection head 14 includes a second tubular lens or tubular lens assembly 38 for use with the second image capture device 34. In most embodiments, the first tubular lens 36 and the second tubular lens 38 collectively share common optical characteristics and functions. Accordingly, tubular lenses 36 and 38 have been designated as first tubular lens 36 and second tubular lens 38 for clarity of illustration only.

In many embodiments, optical pickup 14 also includes a number of target lenses 40 (or target lens assemblies 40), for example, four target lenses 40. In various embodiments, the target lenses 40 are commonly mounted on a rotatable mount 42 (as shown in FIG. 3) that rotatably positions each number of target lenses 40 for detecting wafers. 12 position detection position (not shown).

In most embodiments, each number of target lenses 40 can be shaped and configured to achieve different magnifications. Moreover, in many embodiments, the target lens 40 is of equal focal length. In several embodiments, each number of target lenses 40 has different predetermined magnification factors, such as five, ten, twenty, and fifty times. In some embodiments, each number of target lenses 40 has an infinite correction aberration. However, those skilled in the art will appreciate that each number of target lenses 40 can be altered, redesigned, or reconfigured to achieve different magnifications and performance.

In many embodiments of the present disclosure, each of the low angle dark zone illuminator 28 and the high angle dark zone illuminator 30 includes a focusing tool or mechanism for pointing or focusing toward the wafer 12 disposed at the detection location. The dark area brightness. In a particular embodiment, the angle between the low angle dark zone illuminator 28 and the horizontal plane of the wafer 12, and the angle between the high angle dark zone illuminator 30 and the level of the wafer 12 can be enhanced for inspection. Sexual decision or adjustment.

In several embodiments of the present disclosure, each low angle dark zone illuminator 28 and high angle dark zone illuminator 30 have a fixed spatial location associated with the detected location. In other embodiments of the present disclosure, the position of each of the low angle dark zone illuminator 28 and the high angle dark zone illuminator 30 changes with the detected position during normal operation of the system 10.

As noted above, in many embodiments, the brightness of the bright areas and the brightness of the dark areas can be focused or directed at the detection location and according to the wafer 12 disposed at the detection location. Focusing or pointing to the brightness of the bright areas at the detection location and the brightness of the dark areas may illuminate the wafer 12 or a portion of the wafer 12 disposed at the detection location.

As shown in FIG. 6, in various embodiments, system 10 includes a wafer stack 20 or a film frame. In several embodiments, wafer stack 20 includes slits that sandwich some of the wafers 12. In some embodiments, each wafer 12 is continuously loaded or transferred to wafer table 16 (shown in FIG. 4) or wafer by mechanical wafer handling device 18 (shown in FIG. 5). On the chuck. Suction or vacuum may be applied to the wafer table 16 to stabilize the wafer 12 on the wafer table 16. In some embodiments, wafer table 16 includes applying a vacuum to a predetermined number of tiny holes or slits to provide a reliable and flat set of flex frame tape and frame (both not shown) to the wafer. On the 16th. In most embodiments, wafer table 16 is molded, cut to size, and designed to manipulate wafer 12 between and including a range of approximately six inches and twelve inches in diameter. In a particular embodiment, wafer table 16 can be shaped, cut to size, and designed to manipulate wafers 12 of different sizes, such as wafers 12 that are less than about six inches and greater than about twelve inches.

In many embodiments, wafer table 16 is coupled to XY-displacement disk 22, which facilitates displacement of wafer table 16 in the X and Y directions, or imparts displacement of wafer table 16 in the X and Y directions. ability. The displacement of wafer table 16 correspondingly shifts open wafer 12 placed on wafer table 16. In many embodiments, the displacement of the wafer table 16, and thus the displacement of the wafer 12 placed on the wafer table 16, is used to control the position of the wafer 12 at the detection location. The XY-displacement disk 22 can also be linearly positioned for known air gaps. The XY-displacement disk 22 or air gap linear positioning contributes to the high accuracy of the wafer table 16 displacement in the X and Y directions, with the self-stationary system 10 to the wafer table 16 transmitting minimal vibration effects and ensuring detection The smoothing and accurate setting of the wafer 12 at the location, or a portion thereof.

In most embodiments, the XY-displacement disk 22 and/or the wafer table 16 are mounted on a damper or vibration isolation table 24 (as shown in FIG. 2) for absorption applied to the XY-displacement disk 22 and/or crystal. Impact or vibration on the table 16 and ensuring the flatness of the XY-displacement disk 22 and/or wafer table 16 and other modules or additional mounting thereon.

Those skilled in the art will appreciate that other mechanical devices or devices are coupled to or used with wafer table 16 to control their displacement to facilitate high accurate fine placement of wafer 12 at the location of the detection.

In many embodiments of the present disclosure, when the wafer 12 is moving, detection of possible wafer 12 detection on the wafer 12 is performed. In other words, the capture of the wafer 12 image, such as the bright region image of the wafer 12 and the dark region image, occurs when the wafer 12 is removed from each of the detected locations. In some embodiments of the present disclosure, each new wafer 12 may stop image averaging to capture high resolution images if the user selects through a programmable configuration chart.

As previously described, system 10 includes a first tubular lens 36 and a second tubular lens 38. In several embodiments of the present disclosure, the first tubular lens 36 is disposed or disposed between the target lens and the first image capturing device 32. The brightness passes through the first tubular lens 36 before the brightness enters the first image capturing device 32. In several embodiments of the present disclosure, the second tubular lens 38 is disposed between the target lens 40 and the second image capturing device 34. The brightness is deflected by the second tubular lens 38 and by the mirror or prism 47 before entering the second image capturing device 34.

In many embodiments, each number of target lenses 40 has an infinite correction aberration. Accordingly, the brightness or light received by the target lens 40 is thus aimed. Thus, in many embodiments, the brightness that is moved between the target lens 40 and each of the first tubular lens 36 and the second tubular lens 38 is thus aimed. The brightness of aiming between the target lens 40 and each of the first tubular lens 36 and the second tubular lens 38 is easily enhanced, and each of the first image capturing device 32 and the second image capturing device are separately provided elastically. 34. The use or use of the tubular lenses 36, 38 also eliminates the need to refocus the brightness of each of the first image capture device 32 and the second image capture device 34 when different target lenses 40 are used. Moreover, the aiming of brightness tends to increase the adoption and placement of additional optical elements or components of system 10, particularly between target lens 40 and each of first tubular lens 36 and second tubular lens 38. In most embodiments of the present disclosure, the aiming of brightness enables the original use and arrangement of additional optical elements or components of the system 10, particularly between the target lens 40 and each of the first tubular lens 36 and the second tubular lens. Between 38, there is no need to reconfigure the remaining systems 10. Moreover, in several embodiments, the above arrangement helps achieve a longer working distance between the target lens 40 and the wafer 12 than is used in existing equipment. A longer working distance between the target lens 40 and the wafer 12 typically must effectively use dark area brightness.

It will be appreciated by those skilled in the art that the system 10 disclosed herein allows for the resiliency of the components of the system 10 as well as the original design and reorganization. The system 10 disclosed herein facilitates the use and removal of optical components or components within the system 10 or outside of the system 10.

In many embodiments, the first tubular lens 36 facilitates aiming the brightness to focus on the first image capture plane. Similarly, in many embodiments, the second tubular lens 38 facilitates aiming the brightness to focus on the second image capture plane. In various embodiments, the first tubular lens 36 is disposed such that the first image capturing plane corresponds to a first focal length or distance of the first tubular lens 36; and the second tubular lens 38 is disposed such that the second image capturing plane corresponds to the second tubular shape The second focal length or distance of the lens 38. Although tubular lenses 36, 38 are described for use with system 10 of several embodiments of the present invention, it is well known to those skilled in the art that another optical device or mechanism can be used for aiming of brightness, and more particularly, The bright and dark areas and their subsequent focus are focused to a first image capture plane and a second image capture plane, respectively, in other embodiments of the present disclosure.

In some embodiments of the present disclosure, the first image capture device 32 and the second image capture device 34 are disposed along adjacent parallel axes. The spatial positions of the first image capturing device 32 and the second image capturing device 34 are determined to reduce the space occupied by the first image capturing device 32 and the second image capturing device 34, so that the system 10 occupies a small total Area (also known as effective space).

In several embodiments of the present disclosure, system 10 further includes a beam splitter and a mirror or reflective surface. A beam splitter and mirror or reflective surface are provided to point and re-point the brightness of the bright areas and the dark areas of each of the low angle dark zone illuminators 28 and the high angle dark zone illuminators 30.

In most embodiments of the present disclosure, system 10 further includes a central processing unit (CPU) (also referred to as a processing unit) having a memory or database (also referred to as a post processor) (not shown). . The CPU is electrically coupled or coupled to other components of system 10, such as first image capture device 32 and second image capture device 34. In the embodiment of the present invention, the image captured by the first image capturing device 32 and the second image capturing device 34, or the response, is converted into an image signal and transmitted to the CPU.

In many embodiments, the CPU can programmatically process information, and more specifically, transmit video signals to the CPU to check for defects present on the wafer 12. In several embodiments of the present disclosure, inspection of the wafers on the wafer 12 is automatically performed by the system 10 and, more specifically, by the CPU. In some embodiments of the present disclosure, the detection of wafer 12 is automated by system 10 and controlled by the CPU. In addition, the inspection of the germanium wafer 12 can be assisted by at least one manual input.

In many embodiments, the CPU is programmable to store information that is transferred to the database. In addition, the CPU is programmable to classify inspections. In addition, the CPU is preferably programmable to store processed information, and more specifically, to store processed images and flaws in the database. Further, details regarding image capture, image capture processing, and flaw detection on the wafer 12 are provided as follows.

It will be appreciated by those skilled in the art that, using the description provided above, the brightness of the bright areas emitted or supplied by the bright area illuminator 26, as well as by each of the low angle dark area illuminators 28 and the high angle dark area illuminators 30 (after each Also known as dark area low angle or DLA brightness, and dark area high angle or DHA brightness) the dark area brightness emitted by each follows a different light path or optical path.

Figure 10 shows a flow diagram of a particular first ray path 100 followed by bright area luminance in accordance with an embodiment of the present disclosure.

In step 102 of the first ray path 100, the bright area brightness or light is supplied by the bright area illuminator 26. As previously described, the bright region brightness can be emitted from the first fiber of the bright region illuminator 26. The first fiber is directed to the brightness of the bright area emitted by the bright area illuminator 26. In several embodiments of the present disclosure, the bright region brightness passes through a three lens condenser 44. The three-lens concentrator 44 concentrates the brightness of the bright areas.

In step 104, the brightness of the bright areas is reflected by the first reflective surface or the first mirror. The brightness of the bright areas reflected by the first reflective surface is directed to the first beam splitter 48.

In step 106, the first beam splitter 48 reflects at least a portion of the significant bright area brightness thereon. In several embodiments of the present disclosure, the first beam splitter 48 has a reflection/transmission (R/T) ratio of 30:70. Those skilled in the art will appreciate that the R/T ratio of the first beam splitter 48 can be adjusted as needed to control the intensity or amount of brightness reflection or therefore transmission of the bright areas.

The brightness of the bright areas reflected by the first beam splitter 48 is directed to the detection position. More specifically, the brightness of the bright areas reflected by the first beam splitter 48 is directed to the target lens 40 disposed directly at the detection position. In step 108, the bright area illuminator 26 is focused by the target lens 40 on the wafer 12 at the detection location or at the detection location.

The bright area brightness is supplied by the bright area illuminator 26 and focused on the detection location to illuminate the wafer 12, and more particularly to illuminate a portion of the wafer 12 disposed at the detection location. In step 110, the brightness of the bright area is reflected by the wafer 12 disposed at the detection position.

In step 112, the brightness of the bright areas reflected by the wafer 12 passes through the target lens 40. As previously described, target lens 40 has infinitely corrected aberrations in most embodiments of the invention. The brightness of the bright areas passing through the target lens 40 is aimed by the target lens 40. The degree of brightness of the bright area is proportional to the magnification factor of the target lens 40 via the magnifying lens system.

The brightness of the bright area passing through the target lens 40 is directed to the first beam splitter 48. In step 114, the bright region brightness penetrates the first beam splitter 48 and a portion is transmitted via the first beam splitter 48. In step 114, the extent to which the brightness of the bright region is transmitted through the first beam splitter 48 depends on the R/T ratio of the first beam splitter 48. The brightness of the bright area transmitted through the first dichroic mirror 48 is advanced toward the second dichroic mirror 50.

In several embodiments of the present disclosure, the second beam splitter 50 of system 10 is a cube beam splitter 50 having a predetermined R/T ratio. In some embodiments of the present disclosure, the R/T ratio is 50/50. The R/T ratio can be changed as needed. The cube beam splitter 50 used is preferably a two-optical path due to the splitting of the received brightness by the cube beam splitter 50. To this end, it is well known to those skilled in the art that the configuration and shape of the cube beam splitter 50 will provide better performance and calibration. The degree of brightness reflected or transmitted by the second dichroic mirror 50 depends on the R/T ratio of the second dichroic mirror 50. In step 116, the brightness of the bright area penetrates the second beam splitter 50. The brightness of the bright areas penetrating the beam splitter is thus transmitted or thus reflected.

The brightness of the bright area transmitted via the second dichroic mirror 50 is advanced toward the first image capturing device 32. In step 118, the brightness of the bright area passes through the first tubular lens 36 before entering the first image capturing device 32 in step 120. The first tubular lens 36 assists in focusing the brightness of the bright spot to the first image capture plane of the first image capture device 32. The brightness of the bright area is focused onto the first image capturing plane to capture the bright area image by the first image capturing device 32.

The bright area image captured by the first image capturing plane is converted into an image signal. The image signal is then transmitted or downloaded to the CPU. Transferring video signals to the CPU is also known as data transfer. The transmitted bright area image is then processed and stored by at least one CPU.

The brightness of the bright area reflected by the second dichroic mirror 50 is advanced toward the second image capturing device 34. In step 122, the brightness of the bright area passes through the second tubular lens 38 before entering the second image capturing device 34 in step 124. The second tubular lens 38 assists in focusing the brightness of the targeted bright area onto the second image capture plane. The brightness of the bright area focused on the second image capturing plane can be captured by the second image capturing device 34.

The bright area image captured by the second image capturing plane is converted into an image signal. The image signal is then transmitted or downloaded to the CPU. Transferring video signals to a programmable controller is also known as data transfer. The transmitted bright area image is then processed and stored by at least one CPU.

11 is a flow chart showing a particular second ray path 200 followed by dark zone high angle (DHA) brightness, in accordance with an embodiment of the present disclosure.

In the second ray path 200 in step 202, the DHA brightness is supplied by the high angle dark zone illuminator 30. As previously described, the second fiber helps point to the DHA brightness supplied by the high angle dark zone illuminator 30. In several embodiments of the present disclosure, the DHA brightness is directly focused on the detection location without the need to pass optical elements or accessories, such as target lens 40.

In step 204, the DHA brightness directed to the detection location is reflected by the wafer 12 or a portion of the wafer 12 disposed at the detection location. In step 206, the DHA brightness reflected from the wafer passes through the target lens 40. The target lens 40, which has infinitely corrected aberrations, is aimed at passing the DHA brightness of the target lens 40 in step 206.

The DHA brightness through the target lens 40 is directed to the first beam splitter 48. In step 208, the DHA brightness is transmitted through the first beam splitter 48 and a portion of the DHA brightness is transmitted through the first beam splitter 48. The degree of DHA luminance transmission through the first dichroic mirror 48 depends on the R/T ratio of the first dichroic mirror 48.

The DHA brightness transmitted through the first beam splitter 48 is directed to the second beam splitter 50. In step 210, the DHA brightness is transmitted through the second beam splitter 50. The transmission or reflection of the DHA brightness that penetrates the second beam splitter 50 depends on the R/T ratio of the second beam splitter 50.

In step 212, the DHA brightness transmitted through the second dichroic mirror 50 is passed through the first tubular lens 36 before entering the first image capturing device 32 in step 214. The first tubular lens 36 assists in focusing the DHA brightness to the first image capture plane of the first image capture device 32. The DHA brightness focused on the first image capture plane has the ability to capture dark area images, and more specifically, the dark image high angle (DHA) image is captured by the first image capture device 32.

In addition, the DHA brightness is reflected by the second beam splitter 50. In step 216, the DHA brightness reflected from the second beam splitter 50 passes through the second tubular lens 38 before entering the second image capturing device 34 in step 218. The second tubular lens 38 assists in focusing the DHA brightness to the second image capture plane of the second image capture device 34. The DHA brightness focused on the second image capture device 34 has the ability to capture dark region images, and more specifically, the dark region high angle (DHA) image is captured by the second image capture device 34.

Figure 12 shows a flow diagram of a particular third ray path 250 following the low angle (DLA) brightness of the dark region 25, in accordance with an embodiment of the present disclosure.

In the third ray path 200 in step 252, the DLA brightness is supplied by the low angle dark zone illuminator 28. The third fiber helps point to the DLA brightness supplied by the low angle dark zone illuminator 28. In several embodiments of the present disclosure, the DLA brightness is directly focused on the detection location without the need to pass optical components or accessories, such as target lens 40.

In step 254, the DLA brightness directed to the detection location is reflected by the wafer 12 or a portion of the wafer 12 disposed at the detection location. In step 256, the DLA brightness reflected from the wafer passes through the target lens 40. The target lens 40, which has infinitely corrected aberrations, is aimed at the DLA brightness of the target lens 40 in step 256.

The DLA brightness through the target lens 40 is directed to the first beam splitter 48. In step 258, the DLA luminance is transmitted through the first beam splitter 48 and a portion of the DLA luminance is transmitted through the first beam splitter 48. The extent to which the DLA luminance is transmitted through the first beam splitter 48 depends on the R/T ratio of the first beam splitter 48.

The DLA luminance transmitted through the first dichroic mirror 48 is directed to the second dichroic mirror 50. In step 260, the DLA brightness penetrates the second beam splitter 50. The transmission or reflection of the DLA luminance that penetrates the second dichroic mirror 50 depends on the R/T ratio of the second dichroic mirror 50.

In step 262, the DLA luminance transmitted through the second dichroic mirror 50 passes through the first tubular lens 36 before entering the first image capturing device 32 in step 264. The first tubular lens 36 assists in focusing the DLA brightness to the first image capture plane of the first image capture device 32. The DLA luminance focused on the first image capture plane has the ability to capture dark region images, and more specifically, the dark region low angle (DLA) image is captured by the first image capture device 32.

In addition, the DLA brightness is reflected by the second beam splitter 50. In step 266, the DLA brightness reflected from the second dichroic mirror 50 passes through the second tubular lens 38 before entering the second image capturing device 34 of step 268. The second tubular lens 38 assists in focusing the DLA brightness to the second image capture plane of the second image capture device 34. The DLA luminance focused on the second image capture plane has the ability to capture dark region images, and more specifically, the dark region low angle (DLA) image is captured by the second image capture device 34.

It is well understood by those skilled in the art from the foregoing that in several embodiments of the present disclosure, DHA brightness and DLA brightness follow a similar ray path after being reflected by wafer 12. However, the second ray path 200 of the DHA brightness and the third ray path 250 of the DLA brightness may each be individually selected to vary according to the needs of the prior art. Moreover, in some embodiments of the present disclosure, the DHA brightness of the wafer 12 disposed at the detection location and the angle of the DLA brightness may be adjusted according to the need to enhance the accuracy of the defect inspection. For example, in some embodiments of the present disclosure, the DHA brightness and the angle of the DLA brightness of the wafer 12 disposed at the detection position may be checked according to the user of the system 10 to check the wafer 12 disposed at the detection position. Form or wafer form adjustment.

The DHA image and the DLA image captured by each of the first image capturing device 32 and the second image capturing device 34 are preferably converted into image signals, which are subsequently transmitted or downloaded to the CPU. Transferring video signals to the CPU is also known as data transfer. The transmitted DHA image and the DLA image can be at least one image processed by the CPU and stored in the CPU as needed.

In many embodiments of the present disclosure, the first image capture device 32 and the second image capture device 34 have predetermined spatial positions that are opposite one another. The use of the target lens 40 along with the first tubular lens 36 and the second tubular lens 38 facilitates the spatial arrangement of the first image capture device 32 and the second image capture device 34. Those skilled in the art will appreciate that other optical components or accessories, such as mirrors, can be used to point to bright area brightness, DHA brightness, and DLA brightness, as well as to facilitate spatial settings of the first image capture device 32 and the second image capture device 34. . In most embodiments of the present disclosure, the spatial positions of the first image capturing device 32 and the second image capturing device 34 are fixed relative to the detecting position. The fixed spatial position of the first image capture device 32 and the second image capture device 34 helps to enhance at least one accuracy and efficiency of wafer detection by the system 10. For example, the fixed position of the first image capturing device 32 and the second image capturing device 34 relative to the detected position preferably reduces the correction failure and the adjustment feedback failure generally associated with the used motion image capturing device or camera. .

In many of the embodiments disclosed herein, system 10 includes some third illuminators 52, hereinafter referred to as thin line illuminators 52.

In some embodiments, for example, as shown in Figures 13 and 27a, system 10 includes a thin line illuminator 52. In other embodiments, for example, as shown in Figures 27b and 27c, the system includes two thin line illuminators 52, a first thin line illuminator 52a and a second thin line illuminator 52b. It will be appreciated by those skilled in the art that system 10 can include any number of thin wire illuminators 52, such as three, four, five or more thin wire illuminators 52, all of which are within the scope of the present disclosure.

The thin line illuminator 52 provides thin line brightness. In several embodiments of the present disclosure, the thin line illuminator 52 can be a laser source for providing thin line laser brightness. In other embodiments of the present disclosure, the thin line illuminator 52 can be a broadband illuminator that provides broadband thin line brightness.

The wavelength at which the thin line luminance is supplied or emitted by the thin line illuminator 52 can be controlled (e.g., selected and/or changed), such as in accordance with the characteristics, properties, and/or distribution characteristics of the inspection wafer 12.

In some embodiments, wherein system 10 includes two or more thin line illuminators 52 (eg, first thin line illuminator 52a and second thin line illuminator 52b), thin line illuminator 52 supplies thin line brightness The wavelengths can be similar or substantially similar. However, in other embodiments, where system 10 includes two or more thin line illuminators 52 (eg, first thin line illuminator 52a and second thin line illuminator 52b), thin lines are supplied by thin line illuminator 52. The wavelengths of the brightness are different from each other or substantially different.

Moreover, in a particular embodiment, wherein system 10 includes two or more thin line illuminators 52 (eg, first thin line illuminator 52a and second thin line illuminator 52b), supplied by each thin line illuminator 52 The relative intensities of the thin line brightness may be similar or different from each other. In various embodiments, the relative intensity of the thin line luminance supplied by each thin line illuminator can be controlled (eg, selectable and/or changeable), for example, based on inspection of the characteristics, properties, and/or distribution characteristics of the wafer 12. .

In many of the embodiments disclosed herein, the thin line brightness supplied or emitted by the thin line illuminator is directed toward or toward the detection position.

According to various embodiments disclosed, the detection location may be defined as a wafer, substrate or object surface location or designated area, and/or wafer station location, which is currently considered for reflection or re-reflection during detection processing. Point to the brightness signal. The detection position can correspond to the XY (and possibly θ) position of the current wafer, substrate or object surface; and/or the current XY (and possibly θ) position by the wafer table carrying the wafer, substrate or other object 16 established. The detection location may additionally or alternatively be defined as a particular set of discrete locations or spatial coordinates (eg, XY-θ) for tracking along the wafer scan path, where the wafer scan path During the detection process, a sequence of spatial locations is established by wafer 12 moving or switching (e.g., via continuous movement with respect to instant detection). Thus, the detected position can be defined as a spatial position (eg, given by a set of XY-θ coordinates), along a wafer scan moving path that interacts with the surface of the wafer (eg, by an image capture device) 56 picks).

The thin line brightness is directed to a detected position at a predetermined angle, which may be determined and varied, for example, depending on the function of system 10.

In several embodiments of the present disclosure, system 10 includes at least one set of mirrors 54 (also referred to as mirror mechanisms 54 or mirror assemblies 54) that are configured to point to the thin line brightness of the detected location. In many embodiments, system 10 includes a thin line illuminator 52, which in turn includes a set of mirrors 54 configured to direct the supply of thin line brightness by thin line illuminator 52 at the detection location. Likewise, in many embodiments, wherein system 10 includes multiple thin line illuminators 52, such as first thin line illuminator 52a and second thin line illuminator 52b, as shown in Figure 27b, system 10 includes multiple sets of mirrors 54, for example, the first set of mirrors 54a and the second set of mirrors 54b are configured and directed to the brightness of the thin lines supplied by the thin line illuminators 52a, 52b at the detection location.

In most embodiments, each set of mirrors 54 includes reflective surfaces or mirrors that are configured, arranged, and/or configured to point toward a thin line of brightness toward the detection location. Each mirror configured relative to one another can be determined and changed, for example, depending on the function or characteristics of system 10.

In various embodiments, the set of mirrors 54, such as the first set of mirrors 54a and the second set of mirrors 54b, are configured or arranged in a generally symmetrical configuration. Moreover, the set of mirrors 54 can be arranged or arranged in other configurations, such as depending on the function of the system 10 or the size of the available space of the system 10.

In many embodiments, optical pickup 14 of system 10 includes a third image capture device (hereinafter referred to as a three-dimensional (3D) contour camera 56). In most embodiments, the 3D contour camera 56 receives the thin line brightness 10 reflected by the wafer 12, and more specifically, the thin line brightness 10 reflected from the surface of the wafer 12 disposed at the detection location.

In some embodiments, for example, as shown in Figures 27a and 27b, system 10 includes a set of reflectors 84 (also referred to as reflective components or reflectors), such as one, two, three, and four groups. Or more sets of reflectors 84 are directed to the thin line brightness that is reflected off the surface of the wafer 12 toward the 3D contour camera 56.

In most embodiments, each set of reflectors 84 is shaped, configured, and/or configured to point toward a thin line of brightness that is reflected off the surface of the wafer 12 toward the 3D contour camera 56.

In several embodiments, array reflector 84 of system 10 corresponds to a number of thin line illuminators 52 of system 10. Accordingly, system 10 includes two thin line illuminators 52, such as first and second thin line illuminators 52a, 52b, which also includes two sets of reflectors 84, such as a first set of reflectors 84a and a second set of reflectors. 84b. In other embodiments, the plurality of sets of reflectors 84 of system 10 are not dependent on a number of thin line illuminations 52 of system 10.

In many embodiments, each set of reflectors 84 includes some reflective surface mirrors, such as two, three, four or more reflective surfaces that are shaped, configured, and/or configured to point to thin line brightness. The 3D contour camera 56 is oriented. In various embodiments, the set of reflectors 84 can include a prism assembly (not shown) that is shaped, configured, and/or configured to direct thin line brightness toward the 3D contour camera 56. The prism assembly can include at least one optical prism configured to receive brightness and (re)directed to the received brightness along one or more intended optical travel paths or directions via optical refraction and/or dispersion.

In most embodiments, each set of reflectors 84 is configured to receive a thin line of brightness that is reflected off the surface of the wafer 12 in a particular direction. For example, the first set of reflectors 84a can be configured to receive thin line brightness that is reflected off the surface of the wafer 12 in a first direction, and the second set of reflectors 84b can be configured to receive a thin reflection off the surface of the wafer 12 in a second direction Line brightness, wherein the first direction is different from the second direction. In embodiment 10 of system 10 includes other sets of reflectors 84 that are configurable to receive brightness that is reflected off the wafer surface in corresponding directions.

In various embodiments, for example, as shown in FIG. 27c, system 10 does not include the set of reflectors 84 that are directed to reflect and/or scatter away from the surface of wafer 12 toward the thin line brightness of 3D contour camera 56 (or Reflective component). Such brightness can be described in detail below by way of typical reflection or scattering of the surface of the wafer. The thin line brightness that reflects and/or scatters away from the surface of the wafer 12 is directly captured by the 3D contour camera 56, which can be set and/or configured to capture the thin line brightness.

In several embodiments of the present disclosure, the optical detecting head 14 further includes a target lens or a target lens assembly (hereinafter referred to as a 3D contour target lens 58) for use with a 3D contour camera 56 or a 3D image capturing device. In many embodiments, the thin line brightness that is reflected off the surface of the wafer 12 passes through the 3D contour target lens 58 before entering the 3D contour camera 56. In many embodiments, the 3D contour target lens 58 has infinite correction aberrations. Accordingly, the thin line luminance of the 3D contour target lens 58 is thus aimed.

In some embodiments, the optical detection head 14 further includes a tubular lens 60 for use with the 3D contour target lens 58 and the 3D contour camera 56. The tubular lens 60 is shaped and adapted to facilitate or impart the ability to focus the aiming line brightness to the 3D image capture plane of the 3D contour camera 56.

In various embodiments, the tubular lens 60 is used with the 3D contour target lens 58 and the 3D contour camera 56 to facilitate elastic setting and recombination of the 3D contour camera 56. Moreover, in certain embodiments, the tubular lens 60 is used with the 3D contour target lens 58 and the 3D contour camera 56 to facilitate the introduction of additional optical components or accessories between the 3D contour target lens 58 and the tubular lens 60.

In many embodiments, the thin line illuminator 52 and the 3D contour camera 56 operate cooperatively to aid in 3D contour scanning and wafer 12 detection. In other words, the thin line illuminator 52 and the 3D contour camera 56 are used together to obtain information on the surface 3D characteristics (or geology) of the wafer 12.

In many of the embodiments disclosed herein, the thin line illuminator 52 and the 3D contour camera 56 are coupled to a CPU (or processing unit) that assists in coordinating or synchronizing the operation of the thin line illuminator 52 and the 3D contour camera 56. In several embodiments, automatic 3D contour scanning and wafer 12 detection are performed by system 10. Automatic 3D contour scanning and wafer 12 detection can be controlled by the CPU.

In several embodiments of the present disclosure, the optical detection head 14 includes a review image capture device 62. The review image capturing device 62 is, for example, a color camera. In some embodiments, the review image capture device 62 captures the color image. In other embodiments, the review image capture device 62 captures a monochrome image. In various embodiments, the review image capture device 62 retrieves the review image of the wafer 12 for at least one of identifying, sorting, and reviewing the defects on the wafer 12.

In accordance with an embodiment of the present disclosure, FIG. 14 shows a review of the bright area illuminator 64, a review dark area illuminator 66, a review image capture device 62, and a brightness pattern therebetween.

In several embodiments of the present disclosure, the optical detection head 14 further includes or is equipped with a review bright area illuminator 64 and a review dark area illuminator 66 for providing respective bright area brightness and dark area brightness.

The review image capturing device 62 receives the brightness of the bright area and the brightness of the dark area, which are respectively supplied by the review bright area illuminator 64 and the review dark area illuminator 66, and are reflected by the wafer 12, for capturing the review image of the wafer 12. . In other embodiments of the present disclosure, the review image capture device 62 captures brightness provided by another illuminator, such as one of the illuminators, for capturing a review image of the wafer 12. The review image capture device 62 can capture high resolution images of the wafer 12.

15 is a flow chart showing a particular fourth ray path 300 following the brightness of the bright areas supplied by the review bright area illuminator 64, in accordance with various embodiments of the present disclosure.

In step 302 of the fourth ray path 300, the bright area brightness is supplied by reviewing the bright area illuminator 64. The brightness of the bright areas supplied by the review bright area illuminator 64 is directed to the first reflective surface 74. In step 304, the brightness of the bright area is reflected by the first reflective surface 74 toward the beam splitter 68. In a subsequent step 306, the brightness of the bright areas penetrating the beam splitter 68 is thus reflected and directed to the detection position. The extent to which the brightness of the bright region is reflected by the beam splitter 68 depends on its R/T ratio.

In step 308, the brightness of the bright areas is reflected by the wafer 12 or a portion of the wafer 12 disposed at the detection location. The brightness of the reflected bright area passes through the review target lens 70 in step 310. In most of the embodiments disclosed herein, the review target lens 70 has infinite correction aberrations. Accordingly, the brightness of the bright region of the target lens 70 is reviewed by step 310 by reviewing the target lens 70.

In step 312, the bright region luminance penetrating beam splitter 68 and a portion of the bright region luminance are transmitted via the beam splitter 68. The degree of brightness of the bright area passing through the beam splitter 68 depends on the R/T ratio of the beam splitter 68. In step 314, the brightness of the bright area is then reviewed by the tubular lens 72 before proceeding to the review image capture device 62 of step 316. The tubular lens 72 is inspected for focusing on the brightness of the bright area on the image capturing plane of the image capturing device 62. Focusing on the brightness of the bright area on the image capture plane of the review image capture device 62 facilitates the review of the bright area image in step 318.

The brightness of the bright areas aimed between the review target lens 70 and the review of the tubular lens 72 helps to facilitate the use of optical components and accessories therebetween. In addition, the brightness of the bright areas aimed between the review target lens 70 and the review tubular lens 72 can preferably be flexibly set and recombined according to the needs of the review image capture device 62.

Figure 16 shows a flow diagram of a particular fifth ray path 350 following the supply of dark area luminance by the review dark area illuminator 66, in accordance with an embodiment of the present disclosure.

In step 352 of the fifth ray path 350, the dark area brightness is supplied by reviewing the dark area illuminator 66. In several embodiments of the present disclosure, the dark area illumination supplied by the review dark area illuminator 66 is directly focused on the detection location. In some embodiments of the present disclosure, the dark area brightness supplied by the review dark area illuminator 66 is directed at the detected position at a predetermined angle of the horizontal plane of the wafer 12. The predetermined angle is preferably a high angle and can be adjusted as needed using conventional techniques.

In step 354, the dark area brightness is reflected by the wafer 12 or a portion of the wafer 12 disposed at the detection location. The dark zone brightness of the reflection is then passed through the review target lens 70 in step 356. The dark-area brightness of the target lens 70 is reviewed by the review in step 356 by reviewing the target lens 70.

In step 358, the aiming dark zone brightness passes through the beam splitter and a portion of the dark zone brightness is transmitted through the beam splitter. The degree of darkness of the dark area passing through the beam splitter 68 depends on the R/T ratio of the beam splitter 68. In step 360, the dark zone brightness is then reviewed by the tubular lens 72 prior to proceeding to the review image capture device 62 of step 362. The fourth tubular lens 72 focuses the brightness of the dark area of the aiming on the image capturing plane of the image capturing device 62. Focusing on the dark region brightness on the image capture plane of the review image capture device 62 facilitates the review of the dark region image of step 364. Between the review target lens 70 and the review of the tubular lens 72, each bright area brightness and dark area brightness of the aiming tends to enhance the design and configuration of the system 10. More specifically, between the review target lens 70 and the review tubular lens 72, each bright area brightness and dark area brightness of the aiming tends to enhance the setup or configuration of the review image capture device 62 with other components of the system 10, This facilitates reviewing the bright area image and reviewing the dark area image capture while the wafer 12 is moving.

The captured review highlight image and the retrieved dark region image are converted to image signals and transmitted from the review image capture device 62 to a programmable controller that can be processed and stored or stored in the database.

The review image capture device 62 can have a fixed spatial position relative to the detected position. Reviewing the fixed spatial position of the image capture device 62 preferably reduces the correction loss associated with the used motion image capture device or camera and adjusting the feedback loss, thereby enhancing the captured bright region image and reviewing the dark region image quality.

In several embodiments of the present disclosure, system 10 further includes a plurality of vibration isolation stations 24, which are well known stabilization mechanisms. When the system is in normal operation, the system 10 can be mounted to the vibration isolation station 24 or the stabilizing mechanism. In several embodiments of the present disclosure, system 10 includes four vibration isolation stations 24, each disposed at a different corner of system 10. The vibration isolation table 24 assists in supporting and stabilizing the system 10. In some embodiments of the present disclosure, each of the vibration isolation stations 24 is a compressible structure or a stainless steel canister that absorbs floor vibrations and thus acts as a buffer against the transmission of floor vibrations to the system 10. The vibration isolation station 24 helps enhance image capture by each of the first image capture device 32, the second image capture device 34, the 3D contour camera 56, and the review camera 62 by preventing unwanted vibration or physical movement of the system 10. Quality, and thus improved quality of wafer 12 detection.

FIG. 17 shows a flow diagram of a particular method or process 400 for detecting wafers 12 in accordance with an embodiment of the present disclosure. In many embodiments, the process 400 for detecting the wafer 12 has at least one ability to inspect, sort, and review the defects on the wafer 12.

In most embodiments of the present disclosure, the process 400 for detecting the wafer 12 utilizes the captured image of the wafer 12 to be compared to at least one detected reference image (also referred to as a gold reference) for classification and Review the defects on wafer 12. For clarity, the description of the specific reference image creation process 900 is provided prior to the description of the particular process 400.

Specific reference image creation process 900

Figure 18 shows a flow diagram of a reference image creation process 900 provided by a particular embodiment of the present disclosure.

In step 902 of reference image creation process 900, a method of loading a predetermined number of reference regions on wafer 12 is performed. In several embodiments of the present disclosure, the method is established or derived by a computer software program. Furthermore, the method is established manually. This method can be stored in the database of the CPU. In addition, the method can be stored in an external database or memory space.

Each predetermined reference area represents a location on the wafer 12 that is of unknown quality. The multiple reference regions used help compensate for possible surface variations at different locations of the wafer 12 or between multiple wafers. Such surface variations include, but are not limited to, different flatness and brightness reflectivity. Those skilled in the art will appreciate that a predetermined number of reference regions may represent the entire surface area of the wafer 12. Additionally, a predetermined number of reference regions may represent multiple predetermined locations on multiple wafers.

In step 904, the first reference area is selected. In a subsequent step 906, a predetermined number ("n") of images is captured at the first capture location of the selected reference area. More specifically, n images are captured at each predetermined location of the selected reference area. The number and location of the predetermined locations of the selected reference area can be changed as needed and facilitated by at least one software program and manual input.

The n images can be captured by using at least one of the first image capturing device 32, the second image capturing device 34, and the review image capturing device 62 as needed. In addition, n images are captured using different image capture devices. The brightness used to capture n images can be changed as needed, for example, one or a combination of bright area brightness, DHA brightness, and DLA brightness. The color and intensity used to capture the brightness of the n images can be selected and changed as needed.

The multiple images captured at each location have the ability to consider changes in brightness, optical settings, and imaging devices to create a reference image during the capture of the reference image. This method of reference image creation minimizes the effects or effects and classifications that are not required for the inspection due to changes in brightness conditions. In addition, some images of the selected reference area can be captured for each particular brightness condition. In most embodiments of the present disclosure, multiple images captured at each particular brightness condition facilitate normalization or compensation of brightness changes in flashing or strobe light bulb flicker.

In several embodiments of the present disclosure, n images are preferably stored in a database of the CPU. In other embodiments of the present disclosure, "n" images are stored in an external database or in a memory space as needed. In step 908, the n images captured in step 906 are aligned and pre-processed. In several embodiments of the present disclosure, the sub-pixels of the n images captured in step 906 are registered. Registration of sub-pixels of n images may be performed using known references, including matching one or more traces, bumps or pads on wafer 12 using one or more binary, grayscale or geometric patterns, but Not limited to this.

In step 910, the reference intensity of each n image is calculated. More specifically, each image reference intensity captured at each predetermined location of the selected reference region is calculated. The calculation of each n image reference intensity aids in the normalization or compensation of color variations at different locations or regions of wafer 12 (or multiple wafers). In addition, the calculation of each n image reference intensity can help create or compensate for other surface variations at different locations or regions of wafer 12 (or multiple wafers 12).

Step 910 produces a calculated reference intensity corresponding to each n reference intensity of one of the n images. In step 912, some statistical information about the intensity of each pixel of each n image is calculated. The number of statistical information includes, but is not limited to, the average, range, standard deviation, and maximum and minimum intensity of each pixel of each n images.

In most embodiments of the present disclosure, the averaging is the geometric mean of the reference intensity per pixel per n images. The geometric mean is an intermediate or average form that represents a concentrated trend or typical value for a set of numbers or n numbers. The set of numbers is multiplied and then the nth root of the product is obtained. The resulting geometric average formula is as follows:

Calculating the geometric mean rather than the arithmetic mean or median prevents the average intensity calculated by each pixel of each n image from being transiently affected by the extremes within the data group.

Further, the range of the absolute intensity (hereinafter referred to as Ri) of each pixel of the n images is calculated. Preferably, the Ri of each of the n images is a value between the maximum and minimum absolute intensities of each of the n images.

As previously described, the standard deviation of each pixel intensity for each n image of the first reference region captured is also calculated in step 906. In most of the embodiments disclosed herein, the standard deviation is a geometric standard deviation that describes how to develop a set of numbers whose preferred average is a geometric mean. The standard deviation formula obtained is as follows:

Where μg is the geometric mean of a set of numbers {A1, A2, ‧‧‧, An}.

In step 914, the captured n images are temporarily stored, along with their corresponding information, such as the location on wafer 12 or the first reference area. In most embodiments of the present disclosure, the statistical information calculated in step 912 is also temporarily stored in step 914. In several embodiments of the present disclosure, the above data is stored in a database of the CPU. In other embodiments of the present disclosure, the above information is stored in other databases or memory spaces as needed.

In step 916, it is determined whether more images of the reference area need to be selected. In several embodiments of the present disclosure, step 916 is software control and automatic execution. In several embodiments of the present disclosure, step 916 is performed by steps 910 and 912 to obtain trusted information. In other embodiments of the present disclosure, step 916 is actuated or manually controlled using conventional techniques.

If it is determined in step 916 that more images of the reference area to be selected are required, steps 904 through 916 are repeated. Steps 904 through 916 can be repeated as many times as needed. When it is determined in step 916 that more images of the first reference area are not required, step 918 is performed to determine if steps 904 through 916 need to be repeated, the next reference area of the predetermined number of reference areas (for purposes of the present invention In other words, it is the second reference area). In several embodiments of the present disclosure, step 918 is software controlled and automatically executed. Additionally, step 918 is preferably performed using information obtained in at least one of steps 910, 912, and 916. In other embodiments of the present disclosure, step 918 is actuated or manually controlled using conventional techniques.

If it is determined in step 918 that an image of the second reference area needs to be captured, that is, if steps 904 through 916 need to be repeated for the second reference area, signals repeating steps 904 through 916 are generated. Steps 904 through 918 can be repeated as many times as needed. In several embodiments of the present disclosure, the repetition of steps 904 through 918 is software controlled and automated.

When it is determined in step 918 that steps 904 through 918 need not be repeated, that is, images of a reference region below a predetermined number of reference regions are not required, a golden reference image (hereinafter referred to as a reference image) is then calculated in step 920.

In most embodiments of the present disclosure, the calculation of the reference image is software control and is performed by a sequence of program instructions. The following steps are specific steps for calculating the reference image. However, those skilled in the art will appreciate that additional steps or techniques complementary to the following steps can be performed in the calculation of the reference image.

In step 922, pixels having a reference intensity greater than a predetermined limit are determined. Moreover, a pixel having an intensity pixel range greater than a predetermined range depends on step 922. The predetermined limits and ranges of step 922 can be selected and determined in software, or manually selected and determined. In step 924, pixels having a standard deviation greater than a predetermined value are identified. The predetermined value of step 924 can be selected and determined by software, or manually selected and determined. In step 926, the previously stored image, such as the image stored in step 914, if the pixel having a reference intensity exceeding a predetermined value or range is identified during steps 922 through 924, reloading repeats any one or more steps 904 to 924.

Steps 922 through 926 facilitate image recognition of pixels containing a particular pixel intensity. In several embodiments of the present disclosure, steps 922 through 926 are capable of identifying image recognition including pixels having a reference intensity that exceeds a predetermined limit or range, such as "unwanted" image recognition. More specifically, steps 922 through 926 eliminate "unnecessary" pixels from the reference image calculation and help prevent "unwanted" pixel effects on the final reference pixel values of the reference image.

"Unwanted" images are discarded. This helps to eliminate the data or images and thus prevent the presence or presence of such defects in the resulting reference image. In step 928, the images of the pixels within the predetermined limits and ranges (i.e., the images are not discarded) are uniform.

In most of the embodiments disclosed herein, the reference image creation process 900 results in the generation of the following image material:

(a) Normalize the intensity average of each pixel of each unified image

(b) The standard deviation of the intensity of each pixel of each unified image

(c) maximum and minimum intensity of each pixel of each unified image

(d) depending on the average reference intensity of each predetermined number of reference regions in step 702

The unified image of step 928 represents the reference image. In several embodiments of the present disclosure, the reference image is further stored in step 928 along with the corresponding image data. In several embodiments of the present disclosure, the reference image and its corresponding image data are stored in a database of the CPU. In other embodiments of the present disclosure, the reference image and its corresponding image data are stored in another database or memory space. Those skilled in the art will appreciate that steps 922 through 926 help reduce the amount or size of memory space required to store reference images and their corresponding data, which may cause method 400 to be performed at a higher speed or accuracy.

In several embodiments of the present disclosure, the average intensity of each pixel is normalized to 255 to display and visualize the reference image. However, it is well known to those skilled in the art that the average intensity of each pixel can be normalized to other values to display and visualize the reference image.

Steps 904 to 928 may repeat at least one first image capturing device 32, second image capturing device 34, and review camera 62 for a predetermined number of times for capturing the corresponding number of images. In addition, steps 904 through 928 can repeatedly capture images, such as bright area brightness, DHA brightness, DLA brightness, and thin line brightness, as needed, with different brightness or brightness conditions. Repeat steps 904 through 928 to create a reference image with multiple brightness or brightness conditions and multiple image capture devices as needed.

As previously described, the derivation of the reference image for the multiple reference regions of the wafer 12 (or multiple wafers), as well as the multiple brightness conditions, help ensure accountability and the required compensation for subsequent illumination in the illuminating conditions. The image causes a change in quality. For example, reference images captured on different reference regions of wafer 12 (i.e., at different locations on wafer 12) preferably ensure accountability and compensation for color variations at different locations on wafer 12.

In several embodiments of the present disclosure, steps 904 through 928 are preferably performed and controlled by the CPU. More specifically, steps 904 through 928 are performed by at least one of them and controlled by a software program. In several embodiments of the present disclosure, at least one of steps 904 through 928 can be manually assisted if desired. The reference image created by the specific reference image creation process 900 uses images captured from the subsequently unknown quality wafer 12, thereby having at least one ability to inspect, sort, and review the defects on the wafer 12.

As previously described, various embodiments of the present disclosure provide a process or method 400 for wafer 12 detection such that at least one inspection, classification, and review are presented on wafer 12.

In the first processing portion 402 of process 400, wafer 12 inspected by system 10 is loaded onto wafer table 16. In several embodiments of the present disclosure, wafer 12 is removed from wafer stack 20 by mechanical wafer handling device 18 and transferred to wafer table 16. Suction or vacuum is applied to the wafer table 16 to stabilize the wafer 12 onto the wafer table 16.

In several embodiments of the present disclosure, wafer 12 includes a wafer identification number (ID number) or a bar code. The wafer ID number or bar code is engraved or attached to the surface of the wafer 12, and more particularly, engraved or attached to the periphery of the surface of the wafer 12. The wafer ID number or bar code helps identify the wafer 12 and ensures that the wafer 12 is loaded onto the wafer table 16 correctly or properly.

In the second processing portion 404, a wafer map loaded onto the wafer 12 on the wafer table 16 is obtained. The wafer map can be loaded from the database of the programmable controller. In addition, wafer maps can be retrieved from external databases or processors. In addition, the wafer map can be used to prepare or take the loaded wafer 12 onto the movable support platform using methods or techniques well known in the art.

In the third processing portion 406, one or more reference locations are captured or dependent on the wafer map, and at least one wafer X, Y translation and θ rotation offset are using techniques well known in the art. Calculation.

In the subsequent processing portion 408, the wafer scan moving path and the plurality of image capturing positions are calculated or determined. The wafer map obtained in step 404 preferably facilitates the wafer scan movement path and the calculation of the plurality of image capture positions. In most embodiments of the present disclosure, the calculation of the wafer scan movement path is dependent on at least one of a number of known parameters. Such known parameters include, but are not limited to, rotational offset, wafer size, wafer grain size, wafer pitch, detection area, wafer scanning speed, and decoding position. Each of the plurality of image capture locations is reflected or corresponding to the location on the wafer 12 from which the image was captured. In most embodiments of the present disclosure, each of the plurality of image capture locations can be altered as needed using techniques well known in the art. The number of image capture locations can also be varied as needed using techniques well known in the art.

In several embodiments of the present disclosure, processing portions 404 through 408 are automatically executed by system 10, and more particularly by a programmable controller of system 10. In some embodiments of the present disclosure, any portion of processing portions 404 through 408 may be executed by other processors or with the assistance of other processors.

In a fifth processing portion 410, the programmable controller of system 10 determines a valid appropriate golden reference (hereinafter referred to as a reference image). If the reference image is not available, the reference image establishes the setup process 900 in the sixth processing portion 412 by the specific reference image as described above.

In most embodiments of the present disclosure, the reference image is obtained or established prior to performing a particular two-dimensional (2D) wafer scan process 400 in the seventh processing portion 414. A process flow diagram of a particular two-dimensional (2D) wafer scan process 500 in accordance with various embodiments of the present disclosure is shown in FIG.

Specific two-dimensional (2D) wafer scanning process 500

19 is a process flow diagram showing a specific two-dimensional (2D) wafer scan process 500 in accordance with various embodiments of the present disclosure. The 2D wafer scanning process 500 provides the ability to capture bright area images and dark area images by the first image capturing device 32 and the second image capturing device 34.

In the first processing portion 502 of the 2D wafer scanning process 500, the first image capturing device 32 is exposed. In the second processing portion 504, the first brightness is supplied. The first brightness is, for example, the brightness of the bright area supplied by the bright area illuminator 26, the DHA brightness supplied by the high angle dark area illuminator 30, or the DLA brightness supplied by the low angle dark area illuminator 28. In several embodiments of the present disclosure, the first brightness selected for supply in step 504 is dependent on a brightness configurator (not shown). In several embodiments of the present disclosure, the brightness configurator is an element of system 10 and is electrically coupled to illuminators (28, 30, 52, 64, and 66) of system 10. In several embodiments of the present disclosure, the brightness configurator is an element of the CPU.

Image capture devices 32 and 34 can use any combination of brightness provided by bright area illuminator 26, DHA illuminator 30, and DLA illuminator 28. An example of a possible combination of the first brightness used by the image capture device 32 and the second brightness used by the image capture device 34 is shown in the graph of FIG. In most embodiments of the present disclosure, if both the first image capture device 32 and the second image capture device 34 use substantially similar brightness, the productivity of such a configuration may be the highest of all possible configurations. productivity.

For the purposes of the following description, Configuration 1 as shown in the diagram in Figure 20 selects the brightness by the configurator. Accordingly, the first brightness is the brightness of the bright area supplied by the bright area illuminator 26.

In most of the embodiments disclosed herein, processing portions 502 and 504 are performed simultaneously. The performance of the processing portions 502 and 504 has the ability to capture the first image. As shown in FIG. 22a, the first image capturing device 32 captures the first image. In the third processing portion 506, the first image captured by the first image capturing device 32 is converted into an image signal, and transmitted to the CPU through the data transfer processing, and stored in the database or in the storage memory.

In the fourth processing portion 508, the second image capturing device 34 is exposed. In the fifth processing portion 510, the second brightness is supplied. Along with the first brightness, the selected second brightness is dependent on the brightness configurator in most embodiments of the present disclosure. For the purposes of the present description, configuration 1 as shown in the graph of Figure 20 is selected by the brightness configurator. Accordingly, the second brightness is the DHA brightness supplied by the high angle dark area illuminator 30. However, it is well known to those skilled in the art that the first brightness and the second brightness can be varied as desired, for example, by varying the configuration according to the different configurations shown in the graph of Figure 20.

In most of the embodiments disclosed herein, processing portions 508 and 510 are performed simultaneously. In several embodiments of the present disclosure, processing portion 506 occurs in a manner that is in a series of processing portions 508 and 510. In many embodiments, the performance of processing portions 508 and 510 facilitates or imparts the ability to capture a second image, as shown in FIG. 22b, with the second image capturing device 34 capturing the second image.

In the sixth processing portion 512, the second image captured by the second image capturing device 34 is converted into an image signal and transmitted to the programmable controller through the data transmission process, and is preferably stored in the database. Or in memory.

Figure 21 is a diagram showing the exposure of the first image capture device 32, the provision of the first brightness, the exposure of the second image capture device 34, the provision of the second brightness, and the data transfer process, in accordance with several embodiments of the present invention.

In many embodiments, processing portions 502 through 512 can repeat the first image and the second image of corresponding array wafer 12 any number of times. In several embodiments of the present disclosure, the processing portions 502 through 512 are preferably repeated along the wafer scanning movement path as calculated in the processing portion 408 at each of the plurality of image capturing locations. The first brightness of 12 and the second brightness capture image.

As described previously, each of the first image (or the first response) and the second image (or the second response) can be converted into an image signal and transmitted to the programmable controller, and then stored in the database or stored. In memory.

In several embodiments of the present disclosure, each processing portion 502 through 512 is executed while the wafer 12 is moving. In other words, when the wafer 12 moves along the wafer scanning moving path, the first image and the second image are captured. Accordingly, those skilled in the art will appreciate that wafer 12 is in processing portions 502, 504 (which occur simultaneously in several embodiments) and processing portions 508, 510 (which also occur simultaneously in several embodiments). Between, it will be moved along the wafer scanning movement path by a predetermined distance. The predetermined distance depends on several factors, including the speed at which the wafer 12 is displaced along the wafer scan moving path and the time required for any of the processing portions 502 to 512, but is not limited thereto. The predetermined distance can be controlled and changed as needed, such as by CPU control and change. The control and variation of the predetermined distance may be at least one software or actuation.

In many embodiments, the wafer 12 displacement as described above results in the creation of a predetermined image shift when the first image is superimposed onto or in comparison to the second image.

Fig. 22c shows an image shift of the first image and the second image combined due to the captured first image and the second image when the wafer 12 is moving. The predetermined image offset depends on a number of factors including the speed at which the wafer 12 is displaced along the wafer scan path and the time required for any of the processing portions 502 through 512, but is not limited thereto. The control and variation of the predetermined image offset may be at least one software or actuation.

In processing portion 514, the XY decoded value is retrieved. In most of the embodiments disclosed herein, XY decoded values are obtained during each processing portion 504 and 510. In most of the embodiments disclosed herein, the XY decoded value represents the position (XY-displacement) of the wafer 12 along the wafer scan path. The obtained XY decoded value is used to calculate an image offset (coarse offset) between the first image and the second image (ie, the offset of the second image relative to the first image) in the processing portion 516. Precision image shifting uses pattern matching techniques to perform sub-pixel image calibration calculations. The final offset is obtained by applying a rough predetermined mathematical formula and a precise image offset. The predetermined mathematical formula can be adjusted as needed using techniques well known to those skilled in the art.

The 2D wafer scanning process 500 performed in the processing portion 414 of the process 400 produces a multi-image capture of the wafer 12, which in most embodiments of the present disclosure is located along the wafer scan path. Image capture location.

In the eighth processing portion 416 of process 400, a particular two-dimensional (2D) image processing program 600 performs at least one identification or detection, classification, merging, and storage on the wafer 12.

Specific 2D image processing program 600

Figure 23 is a flow chart showing the processing of a particular 2D image processing program 600 in accordance with an embodiment of the present invention.

In many embodiments, the 2D image processing program 600 in accordance with an embodiment of the present invention facilitates the processing of image capture in the 2D wafer scan process 500. In addition, the 2D image processing program 600 facilitates at least one of identifying, detecting, sorting, merging, and storing defects on the wafer 12.

In the first processing portion 602 of the 2D image processing program 600, the first working image is selected and loaded into the memory workspace. The first working image is selected by the first image and the second image captured and stored during the 2D wafer scanning process. For the purposes of the description of the present invention, the first operational image represents the first image captured by the first image capture device 32 during the 2D wafer scan process 500.

In the second processing portion 604, sub-pixel calibration of the first working image is performed. In several embodiments of the present disclosure, sub-pixel calibration is performed using one or more pattern pattern matching techniques. This sub-pixel calibration is performed using a binary or grayscale or geometric pattern matching method. Once aligned, the reference intensity of each image is calculated from one or more predetermined regions associated with the image as shown in third processing portion 606. Processing portions 604 and 606 may be collectively referred to as pre-processing of the first working image. It can be quickly understood that the preprocessing is not limited to the processing portion described above. Additional processing steps or steps can be integrated into the pre-treatment if necessary.

In a subsequent processing portion 608, the first golden reference or reference image is selected. The first reference image selected in the processing portion 608 corresponds to or matches the first working image. In most embodiments of the present disclosure, the first reference image is selected by a database or a collected gold reference or by a reference image created by the processing portion 412 of the process 400 in particular with reference to the setup process 900. The specific reference setup process 900 is described above in detail and is shown in FIG.

In the fifth processing portion 610, the data value of each pixel of the first working image is calculated. In a subsequent processing portion 612, the first working image calculates a quantitative data value for each pixel with reference to a predetermined threshold along with a multiplied or added factor.

In the seventh processing portion 614, the first working image is then matched or estimated as compared to the first reference image selected in processing the fourth portion 608. The matching or estimation of the first working image with the first reference image facilitates inspection or identification of defects on the wafer 12. In several embodiments of the present disclosure, the CPU is programmable to be automatically and automatically matched between the first working image and the first reference image. The programmable controller executes a series of computational instructions or algorithms for matching the first working image with the first reference image, thereby having the ability to inspect or identify defects on the wafer 12.

It is determined that one or more of the existing tethers occur in the eighth processing portion 616 of the 2D image processing program 600. If more than one tether is examined or identified in processing portion 616, the algorithm may be ranked by maximum or minimum based on one or both of area, length, width, contrast, tightness, fill factor, edge strength. Furthermore, the algorithm selects only those flaws that meet the user's criteria for determining the region of interest (DROI). If 瑕疵 (or more than one 瑕疵) is checked or identified by processing portion 616, the DROI on wafer 12 is then calculated in ninth processing portion 618.

In several embodiments of the present disclosure, the DROI is dynamically calculated by the CPU in processing portion 618. In several embodiments of the present disclosure, the CPU is programmable (ie, includes or implements a series of computational instructions or software) for computing the DROI.

In the tenth processing portion 620, the DROI corresponding to the second work image is checked. More specifically, the second working image is captured by the second image capturing device 34 during the 2D wafer scanning process 400. The DROI of the second image (which is the image corresponding to the first image) is checked in the processing portion 620 after performing the sub-pixel calibration of the second working image. In several embodiments of the present disclosure, the detection of the DROI of the second working image facilitates the confirmation of the check in the processing portion 616. In several embodiments of the present disclosure, processing portion 620 facilitates the classification of inspections in processing portion 606.

System 10 processes the DROI of the second working image instead of processing the entire image. Moreover, in processing portion 616, if no defects are found, process or method 600 may skip processing portion 618 and process forward. This will further reduce the amount of resources or processing bandwidth needed to process the second working image. It provides a quick understanding of the intelligent processing sequence that is dynamically determined based on previous steps. This will help improve system 10 productivity or wafer inspection per hour.

In processing portion 622, the flaws examined, and more specifically, the locations or locations of the defects and their classification. In several embodiments of the present disclosure, the defects and locations and their classifications are stored in a database of the CPU. In other embodiments of the present disclosure, the flaws examined, as well as the location and its classification, are stored in other databases or memory spaces.

The processing portions 602 through 622 may repeat the image capture at any number of times or in a loop during the 2D wafer scan process 500. In several embodiments of the present disclosure, each image capture during the 2D wafer scan process 500 is continuously loaded into the memory workspace and may be present on the wafer 12 for inspection. Processing. Processing portions 602 through 622 and their repetitions facilitate at least one inspection, validation, and classification, which may be along the wafer scan path and exist on wafer 12 at multiple image capture locations.

In processing portion 624, each of the multiple frames and locations and their classifications examined by 2D image processing program 600 are unified and stored in a database of CPUs in several embodiments of the present disclosure. In other embodiments of the present disclosure, 瑕疵 and location and its classification, system one, are stored in other databases or memory spaces.

In most embodiments of the present disclosure, the 2D image processing program is an automatic process. In several embodiments of the present disclosure, the CPU is programmable to include or include a series of computing instructions or software programs to automatically execute the 2D image processing program. In some embodiments of the present disclosure, the 2D image processing program can facilitate at least one manual input if desired.

Completion of the 2D image processing routine 600 of step 416 of method 400 results in the unification and storage of defects, as well as the use of bright area brightness, DHA brightness, and the location of the DLA brightness check and its classification.

In a subsequent processing portion 418 of process 400, a specific three-dimensional (3D) wafer scanning process, such as first 3D wafer scan process 700, second wafer scan process 750, or third wafer scan process 950 It is performed in accordance with certain embodiments disclosed herein.

In several embodiments of the present disclosure, the 3D wafer scanning process 700, 750, 950 has the ability to capture 3D contour images (or 3D images) of the wafer 12, which facilitates wafer formation therefrom 12 (or for obtaining 3D features or information on the geology of wafer 12) 3D contour. The wafer 12 is taken along any one or more of the multiple image capture locations for capturing 3D images of the wafer 12, and the calculated wafer scan movement path is removed, for example, as calculated in the processing portion 408. The wafer scan moves the path.

In many embodiments of the present disclosure, the selection and use of the first 3D wafer scan process 700, the second 3D wafer scan process 750, or the third 3D wafer scan process 950, in process 400 In portion 418, depending on factors such as the presence and/or number of sets of optical elements or devices may be directed to system 10 (eg, mirror 54 and/or reflector 84), detection conditions, and/or wafer characteristics, properties And/or the brightness of the distribution features.

First 3D wafer scanning process 700

24 is a process flow diagram showing a first 3D wafer scan process 700 in accordance with various embodiments of the present disclosure.

In the first processing portion 702 of the first 3D wafer scanning process 700, the thin line brightness is supplied or emitted by the thin line illuminator 52. The thin line brightness can be supplied by one or more thin line illuminators 52. In a particular embodiment, for example, as shown in Figure 27a, the thin line brightness is supplied or emitted by the thin line illuminator 52.

In the second processing portion 704, the thin line brightness is directed by the set of mirrors 54 to the detection position. As described above, the set of mirrors 54 can be configured and configured to point to the brightness of the thin line supplied by the thin line illuminator 52 to or toward the detection position. In a particular embodiment, the set of mirrors 54 can be controlled in configuration and configuration, such as establishing, selecting, and/or changing, the thin line brightness is directed at the angle of the detected position. In a typical application (eg, corresponding to Figure 27a), the thin line brightness may be directed by a set of mirrors 54 to the surface of the wafer 12 such that the thin line brightness is incident on the wafer perpendicular or otherwise depending on the expected angle of incidence. on the surface.

The sets of mirrors 54 may depend on the number of thin line illuminators 52 used to provide thin line brightness, thin line brightness directed toward or toward the detection location, and/or thin line brightness incident on the surface of the wafer.

In a subsequent processing portion 706, the thin line brightness is reflected by the wafer 12 or a portion of the wafer 12 disposed at the detection location. More specifically, the thin line brightness is reflected by the wafer 12 on the surface or portion of the wafer 12 by being placed at the detection location. The thin line brightness reflected off the wafer 12 can be directed to the 3D contour target lens 58 using some of the reflectors 84.

In a fourth processing portion 708 of the first 3D wafer scan process, the thin line brightness reflected off the wafer 12 is transmitted through the 3D contour target lens 58 with infinitely calibrated aberrations. Accordingly, the thin line luminance transmitted through the 3D contour target lens 58 is aimed at the thin line luminance in the processing portion 708.

In the fifth processing portion 710, the targeted thin line brightness is then passed through the tubular lens 60 before entering the 3D contour camera 56 in the sixth processing portion 712.

The tubular lens 60 focuses the aiming thin line brightness to the image capture plane of the 3D contour camera 56. Focusing on the thin line luminance on the 3D image capture plane has the ability to capture the first 3D contour image of wafer 12 (also referred to as the first response) in step 714.

For the purposes of the present disclosure, a 3D contour image or 3D image may be associated with an image that includes, provides, or communicates information, or with a corresponding surface or structure (eg, surface or structural geology) 3-dimensional (3D) characteristics. Signal related. In addition, the 3D contour image may also be referred to as a response or optical response captured by the 3D contour camera 56.

In several embodiments, the aiming of the thin line brightness between the 3D contour target lens 58 and the tubular lens 60 facilitates easy use of optical components or accessories between the 3D contour target lens 58 and the tubular lens 60, as well as having 3D The ability of the contour camera 56 to flexibly set and reorganize.

In several embodiments of the present disclosure, thin line brightness is provided by a source of laser or broadband fiber optic brightness. In addition, the thin line brightness is preferably directed to the detection location at a particular angle, for example, to define an angle relative to the vertical axis of the wafer 12 and/or the horizontal axis of the wafer table 16 relative to the detection position. In several embodiments of the present disclosure, the angle at which the thin line brightness is directed or toward the detection location can be varied as desired using techniques well known to those skilled in the art.

It is well known to those skilled in the art that wavelength selection and changes in thin line brightness should be known, such as selection and change based on wafer inspection requirements. For example, in several embodiments of the present disclosure, the wavelength of the thin line luminance is selected to enhance the accuracy of at least one inspection, verification, and classification.

The first 3D image is converted into an image signal and transmitted to the CPU in the processing portion 716. In a subsequent processing portion 718, the first 3D image or its image signal is processed by a CPU for at least one 3D height measurement, coplanar measurement, and detection and/or classification of the wafer on the wafer 12.

In several embodiments of the present disclosure, the processing portions 702 to 718 can repeatedly capture any number of corresponding 3D images and transmit the captured 3D images to the CPU. Processing portions 702 through 718 can be performed at the selected image capture location along the wafer scan moving path or the entire wafer.

In several embodiments of the present disclosure, the first 3D wafer scan process 700 enhances the accuracy of the particular method 300 of inspecting semiconductor wafers. In several embodiments of the present disclosure, the first 3D wafer scanning process 700 enhances the accuracy of the defect inspection by the method 300. The used 3D wafer scanning process 700 can facilitate or have the ability to determine 3D metrology details such as coplanar and three dimensional structural heights, such as individual dies and solder bumps of the entire wafer 12, gold bumps, and bumps. song.

In several embodiments of the present disclosure, processing portions 702 through 718 and their repeated results (eg, results obtained by 3D image processing) are stored in a database of the CPU. In other embodiments of the present disclosure, processing portions 702 through 718 and their repeated results (e.g., results obtained by 3D image processing) are stored in other databases or memory spaces as needed.

Second 3D Wafer Scanning Process 750

Figure 25 is a flow chart showing a second three-dimensional (3D) wafer scan process 750, in accordance with a particular embodiment of the present disclosure.

In many embodiments, the second three-dimensional (3D) wafer scanning process 750 facilitates or has the ability to simultaneously capture thin line brightness that has been reflected off the surface of the wafer 12 in at least two different directions by the 3D contour camera 56. Each of the different directions defines at least a portion of a different reflected luminance travel path. The reflected luminance travel path can be defined as a path or route that propagates along the luminance and/or away from the detected location as a wafer surface geology with or toward the image capture device (eg, 3D contour camera) 56 (eg, via The result of the action of reflection or scattering). In various embodiments, a second three-dimensional (3D) wafer scanning process 750 can select and use a system 10 that includes a set of reflectors 84 (ie, at least one set of reflectors 84 or reflective components). For the sake of brevity and clarity, the second three-dimensional (3D) wafer scanning process 750 described below is performed by system 10 including two sets of reflectors or reflective assemblies 84a, 84b. Accordingly, the second three-dimensional (3D) wafer scanning process 750 described below is directed to simultaneously capturing the brightness of the thin line that is reflected off the wafer 12 in two different directions, thereby facilitating or having at least substantially simultaneously The ability to capture the 3D characteristics (eg, 3D features) of the wafer 12 in response (or optical response) or two images.

In the first processing portion 752 of the second 3D wafer scan process 750, thin line brightness is provided, supplied, or emitted by one or more thin line illuminators 52 (or thin line brightness emitters). In some embodiments, for example, as shown in Figure 27a, the thin line brightness is supplied by a thin line illuminator 52. In other embodiments, the thin line brightness is supplied by at least two thin line illuminators 52, for example, by at least a first thin line illuminator 52a and a second thin line illuminator 52b as shown in Fig. 27b.

In a particular embodiment, multiple beams of thin line brightness may be directed to the surface of wafer 12, for example, a first beam of thin line brightness and a second beam of thin line brightness may be directed to the surface of the wafer. In an embodiment such as shown in Figure 27b, the first thin line illuminator 52a can emit, output or provide a first line of thin line brightness, and the second thin line illuminator 52b can emit, output or provide thin line brightness. The second beam.

In the second processing portion 754, the thin line luminance supplied by the thin line illuminator 52 is directed to the detection position. In several embodiments, a set of mirrors 54 (or mirror assemblies) are used to direct the thin line brightness supplied by the thin line illuminator 52 toward the detection position.

In the embodiment illustrated in Figure 27a, the thin line brightness is directed toward the detection location along a single incident luminance travel path. The incident luminance travel path may be defined as a path or route that propagates along the luminance and/or is directed by the thin line illuminator 52 to the detected location. In a typical application, such as the icon shown in Figure 27a, a single set of mirrors 54 may contribute to the direction of thin line brightness toward or toward the wafer such that the thin line brightness is at an expected angle of incidence (eg, approximately relative to the vertical wafer surface axis) 0°) to the wafer surface.

In the embodiment illustrated in Figure 27b, the thin line brightness is directed to the detection location along two different or differential incident luminance travel paths. More specifically, the first light beam providing the thin line brightness by the first thin line illuminator 52a proceeds to the detection position along the first incident brightness travel path, and the thin line brightness is provided by the second thin line illuminator 52b. The two beams travel along the second incident luminance travel path to the detection position. Typically, at the detection location, the first beam of thin line brightness and the second beam of thin line brightness are incident or overlapping together. The first set of mirrors 54a can be directed toward the first beam of thin line brightness along the first incident luminance travel path, and the second set of mirrors 54b can be directed toward the second line of thin line brightness along the second incident luminance travel path. With the first set of mirrors 54a, the first beam of thin line brightness can reach the wafer surface at a first angle of incidence (eg, about 0° with respect to the axial direction of the vertical wafer surface); similarly, by the second set Mirror 54b, the second beam of thin line brightness may arrive at the wafer surface at a second angle different from the incidence of the incident first angle (eg, about 45[deg.] relative to the aforementioned vertical axis).

In some embodiments, several sets of mirrors 54 correspond to a number of thin line illuminators 52. Accordingly, in various embodiments, the first set of mirrors 54a are directed to direct the first light beam that is supplied by the first thin line illuminator 52a with a thin line of brightness, along the first incident brightness path toward the detection position, and The two sets of mirrors 54b are directed to the second light beam that is supplied with the thin line brightness by the second thin line illuminator 52b, along the second incident brightness travel path toward the detection position.

In the third processing portion 756, the thin line brightness is reflected off the surface geology of the wafer 12 at the detection location. The brightness of the thin lines incident on the surface of the wafer 12 can be reflected in some directions, more specifically in some different directions.

The direction in which the thin line brightness is reflected off the surface of the wafer 12 typically depends, or at least in part, on the geological features of the surface of the wafer 12 at the location of the detection (eg, 3D characteristics). For example, structural, geometric, or geological changes on the surface of wafer 12 can cause reflection of thin lines of light incident on wafer 12 in different directions.

Generally, depending on the surface profile, such as the 3D or geological properties of the wafer 12, the brightness of the thin lines that are reflected off the surface of the wafer 12 can be scattered or dispersed in multiple different directions. The system in which the previous brightness is reflected off the surface of the wafer is only extracted from a single direction of reflection, and the dispersion of the brightness of the thin lines in multiple directions can make it difficult to obtain an accurate measurement, analysis or measurement of the surface profile of the wafer 12. This is generally because the dispersion of the brightness of the thin line that is reflected off the surface of the wafer 12 can result in an unduly reduced amount of brightness that reflects the thin line entering the 3D contour camera 56, thereby causing the 3D contour camera 56 to extract a dim image (or a poor response). ). It is often difficult to obtain accurate measurements or analysis from too dark images. Occasionally, the dispersion of the brightness of the thin lines that are reflected off the surface of the wafer 12 can result in an unduly increase in the amount of thin line brightness that is reflected into the 3D contour camera 56, thereby causing the transition of the bright image by the 3D contour camera 56. It is also difficult to obtain accurate measurements or analysis from too bright images. In accordance with an aspect of the present disclosure, the brightness reflected from the wafer surface in multiple different directions is directed to the 3D contour camera 56 along a multiple corresponding (eg, predetermined or selectable) reflected brightness travel path such that the 3D contour camera 56 can Simultaneously, multiple reflection brightness responses corresponding to the calculated detection positions are retrieved.

In the fourth processing portion, the thin line luminance reflected from the surface of the wafer 12 in at least two different directions is directed to the 3D contour camera 56 along at least two different, distinct or distinguishable reflective luminance travel paths, each of which The reflected luminance travel path corresponds to a different set of reflectors 84a, 84b. In several embodiments of the present disclosure, system 10 includes at least two sets of reflectors or at least two reflective assemblies 84a, 84b configured and configured to receive thin line brightness reflected off wafer 12. Each set or each of the reflective assemblies 84a, 84b is configured and configured to receive and/or redirect a thin line brightness that has been reflected off the wafer 12 in a particular distinct direction.

More particularly, in various embodiments, the thin line luminance reflected off the surface of the wafer 12 in the first direction is received and redirected along the first direction directed toward or directed by the 3D contour camera 56 by the first set of reflectors 84a. The luminance travel path is reflected, and the thin line luminance that is reflected off the surface of the wafer 12 in the second direction is received by the second set of reflectors 84b and redirected along a second reflective luminance travel path that is directed toward or directed to the 3D contour camera 56.

Thus, the first set of reflectors 84a are configured and configured to direct the thin line luminance that is received along the first reflected luminance travel path, and the second set of reflectors 84b are configured and configured to travel along the second reflected brightness. The thin line brightness received by the path. The first and second reflected luminance travel paths (or optically reflective travel paths) include portions that are separate and different from each other (eg, a spatial portion).

Although a particular embodiment of the present disclosure is directed to two sets of reflectors 84 or two sets of reflective assemblies 84a, 84b for receiving thin line brightness that reflects off the surface of wafer 12 in two different directions, however, other numbers A reflector 84, such as three, four or more sets of reflectors 84, can be used in conjunction with system 10 to receive a thin line of brightness that reflects off the surface of wafer 12 in a corresponding number of directions.

In many embodiments, at least a portion of the first and second incident and/or reflected luminance travel paths are non-parallel (eg, diverging or converging) with each other. In most embodiments, the first set of reflectors 84a and the second set of reflectors 84b are substantially configured or configured in a symmetrical manner relative to each other.

In most embodiments, the fifth processing portion 760 includes a thin line luminance transmission that travels through each of the first and second reflected luminance travel paths through the target lens 58 or the target lens assembly 58. The target lens 58 is aimed at the brightness of the thin line transmitted therethrough.

In the sixth processing portion 762, the aiming thin line brightness is transmitted through the tubular lens 60. In the seventh processing portion 764, the thin line luminance corresponding to each of the first and second reflected luminance traveling paths enters the 3D contour camera 56. As described above, the tubular lens 60 facilitates or completes the thin line brightness of the focused aiming onto the image capture plane of the 3D contour camera 56. In many embodiments, the focus thin line brightness to the image capture plane of the 3D contour camera 56 has the ability to capture two or two images of the 3D contour image of the wafer 12.

The second response (or optical response) or the capture of the two images of the 3D contour image of the wafer surface geology at the location of the detected location occurs in the eighth processing portion 766. For the purposes of the present disclosure, the second response may be referred to as a first response and a second response, and the two images of the 3D contour image may be referred to as a first image and a second image of the 3D contour image. In various embodiments, the first and second responses can be focused on the image capture plane of the 3D contour camera 56 and capture the spaces adjacent to each other. A first response or first image of the 3D contour image of the wafer surface geology at the current detection location is generated along the first reflected luminance travel path by the traveling thin line brightness or using the traveling thin line brightness. At the current detection location, a second response or second image of the 3D contour image of the surface geology of the wafer is generated by the brightness of the thin line traveling along the second optical path, or along the second optical path. The thin line of light that travels is produced.

The first response and the second response are captured as a single set of image data including image data corresponding to the manner in which the brightness of the surface of the wafer 12 is reflected in each of the first and second directions. In the item of brightness incident on the surface of the wafer 12 including the first beam of thin line brightness and the second line of thin line brightness, the mixed response may include a geologically reflective thin line corresponding to the surface of the wafer 12 in the first direction. The image data of the first light beam of the brightness and the image data corresponding to the second light beam of the thin line brightness of the surface of the wafer 12 in the second direction. In some embodiments, the first beam of thin line brightness may be provided at a first optical wavelength, and the second beam of thin line brightness may be at a second optical wavelength (eg, the first thin line illuminator 52a may have a different output The second thin line illuminator 52b outputs the brightness of the wavelength). In such an embodiment, the 3D contour camera 56 can be a color camera to facilitate the capture, differentiation, and/or analysis of the first and second responses.

In other embodiments of system 10, more than two sets of reflectors can be used to capture images of two or more responses to wafer 12, or 3D contour images.

In a subsequent processing portion 768, responses, such as a first response and a second response, are transmitted to the CPU or processing unit (e.g., as a single set of image material). In the next processing portion 770, the responses, such as the first response and the second response, are processed by a CPU for determining or obtaining information about the 3D characteristics or geology of the wafer 12. The CPU may generate or determine a mixed response using the first and second responses, wherein the mixed response corresponds to a single response or image, and the single response or image representation corresponds to the detected position of the first and second responses, the surface of the wafer Specific 3D features. In some embodiments, the response processed in processing portion 770 facilitates or has at least one 3D height measurement, coplanar measurement, 3D feature analysis, and/or detection and/or classification on wafer 12. .

In several embodiments of the present disclosure, the processing portions 752 through 770 can repeatedly retrieve any number of corresponding first and second responses, and transmit the set of responses to the CPU to obtain the 3D characteristics of the wafer 12. Information on or on geology. For example, the processing portions 752-770 can repeat each detection position along the wafer scanning movement path, and the wafer scanning movement path is defined to include multiple detection positions for capturing and analyzing image data corresponding to the surface texture of the wafer. .

Third 3D wafer scanning process 950

30 is a flow chart showing a third three-dimensional (3D) wafer scan process 950, in accordance with a particular embodiment of the present disclosure.

When system 10 ignores or excludes reflectors (eg, due to system design or selected by a selectable system configuration), process 950 can use, apply, or select, for example, the set of reflectors 84a, 84b for reflection and/or Or redirecting to the brightness of the reflection away from the surface of the wafer 12. For example, in various embodiments, process 950 can be used, applied, or selected without use with system 10 of Figure 27c.

The first processing portion 952 includes multiple beams of light directed toward the brightness of the thin line to or toward a target location or region of the surface of the wafer 12. The first processing portion 952 can include providing or emitting thin line brightness from some of the thin line illuminators 52, for example, including at least one thin line illuminator 52, and in several embodiments, at least two as shown in Figure 27c. Thin line illuminator 52 (i.e., first thin line illuminator 52a and second thin line illuminator 52b).

In the second processing portion 954, the brightness of the thin line emitted by each of the first and second thin line illuminators 52a, 52b is directed to the detection position, and more particularly to the wafer disposed at the detection position. 12, or a portion of the wafer 12 (eg, a target location or region on the wafer 12).

In some embodiments, a set of mirrors 54 (eg, one or more mirrors 54) can be used to direct the brightness of the thin lines emitted by one or more of the thin line illuminators 52 to or toward the wafers disposed at the detection locations. 12. The plurality of sets of mirrors 54 used may depend on, or at least in part depend on, the number of thin line illuminators 52 used to provide or emit thin line brightness toward the wafer 12, and/or configured between predetermined thin line illuminators 52. The specific angle, the surface or plane of the wafer 12, and the image capture device 56 (eg, the optical axis of the image capture device 56).

In several embodiments, the thin line illuminators 52a and 52b and/or one or more sets of mirrors 54 are arranged and/or configured such that the thin line brightness is relative to the wafer 12 plane and/or image capture device 56. The optical axis is directed at a specific angle to the wafer 12. In a particular embodiment, thin line illuminators 52a and 52b and/or at least one mirror 54 may be provided and/or configured to control, for example, a light beam that selects and/or varies the brightness of the thin line to or toward the wafer 12. The set angle, and a set of angles that reflect and/or scatter a beam of light that travels from the wafer 12 to the optical axis of the image capture device or toward the optical axis of the image capture device.

Specular reflection and optical detection of images in scattering patterns

Specular reflection (also referred to herein as complete, total, or even total or substantially total reflection) occurs when substantially or approximately all of the thin line brightness is incident at a particular angle of incidence to a highly reflective, mirrored or illuminated surface (eg, having When the portion of the wafer 12 or the target area of the wafer 12 is polished in the form of a mirror, it is reflected by the surface at a reflection angle equal to the magnitude of the incident angle. More specifically, when the provided thin line brightness penetrates the mirror form surface at an intensity I1 and an angle α1 relative to the vertical axis of the planar mirror form surface or surface feature, the reflected thin line brightness display is equal to or approximately equal to I1. The intensity I2, and substantially all or the main reflected thin line brightness, at an angle α2 with respect to the vertical axis, along the optical path away from the plane mirror form surface, where α1 and α2 are the opposite sides of the vertical axis, and α1 And the sizes of α2 are equal or approximately equal (i.e., α1 and α2 are identical with respect to the vertical axis and the angular magnitude, that is, α2 is equal to α1). Thus, for wafer surface, surface features or structures, it completely reflects the thin line luminance along the incident intensity I1 of angle α1, and the reflected thin line luminance intensity I2 is at least approximately equal to I1 along the angle of α2 equal to the reflection angle of α1.

Scattering, non-specular or diffuse reflection (also referred to herein as partial or incomplete reflection) occurs when thin line brightness is incident on a non-mirror-form surface (eg, a textured, rough, matte or non-smooth surface with a specific structure and And/or a geologically altered or non-uniform surface comprising, for example, a set of scattering centers of solder bumps, scattered, diffusely reflected or redirected away from the surface along one or more optical travel paths, one or more of The optical travel path is different from the thin line brightness angle incident on the non-mirror form surface. That is, the established scattering luminance travel path may exclude reflection or re-orientation having an angle that is not equal to or approximately equal to the magnitude of the thin line luminance incident angle. Thus, when the provided thin line brightness penetrates the non-mirror-form surface at an intensity I1 and at an angle α1 relative to the non-mirror-form surface or the vertical axis of the surface feature, the thin line brightness is along the reflection from the opposite side of the vertical axis. The optical travel path defined by the angle α2 reflects, and the reflection angle α2 has a magnitude equal to or approximately equal to α1 (ie, α2 is equal to -α1), and the reflection angle α2 excludes the intensity I2 that is less than or substantially smaller than I1 due to the non-mirror form The surface system scatters or diffuses the incident thin line brightness along one or more angles other than α1.

In accordance with an aspect of the present disclosure, multiple beams of thin line brightness can be directed toward or toward a target location or region of wafer 12 such that (a) total reflection responds to total reflection of incident thin line brightness corresponding to the target wafer position. And (b) the scattering response to the scattering, diffusion or partial reflection of the corresponding target wafer location can be simultaneously generated at the target wafer location and simultaneously check or capture the overlapping response of the single image capture device 56. This simultaneous generation and simultaneous retrieval of responses (eg, including total reflection responses and overlapping responses to scatter responses) multiple different forms of incident thin line brightness may help or have a more complete and accurate 3D aspect of the target wafer position. / or more effective characterization or analysis capabilities.

In most embodiments, image capture device 56 can be positioned at a predetermined (eg, predetermined or adjustable) brightness response angle relative to a vertical axis, which is defined relative to wafer 12 (or wafer table 16). The plane or surface of the horizontal plane. The vertical axis, for example, can be defined as the plane of the wafer 12 at approximately midpoint relative to the cross-sectional area of the first and second beams incident on the wafer plane at the brightness of the thin line. The brightness response angle corresponds to a brightness angle that is reflected or scattered by the wafer location or surface, such that the brightness exits or propagates from the wafer location or surface due to such reflection or scattering. The angle of the thin line brightness directed toward or toward the wafer 12, and more specifically, the plane of the wafer 12, depends on whether the beam of thin line brightness produces a total reflection response or a scatter response relative to the brightness response angle.

In various embodiments, at least a first line of thin line brightness (eg, provided by the first thin line illuminator 52a) is directed toward or toward a plane of the wafer 12 at a first angle incident with respect to a vertical axis of the wafer plane. Wherein the magnitude of the incident first angle matches or is equal to the brightness response angle. According to the reflection or scattering properties of the currently considered wafer position or location, if the first beam of thin line brightness is incident on the wafer position with mirror-polished, the first beam of thin line brightness will be along the brightness response angle The defined optical path is totally reflected, and the image capture device 56 can take the total reflected first beam of thin line brightness as the first response. If the first beam of thin line brightness is incident on a wafer having a non-mirror surface, the brightness of the first beam will not be fully reflected along the brightness response angle (ie, it may not be scattered), and the image is captured. The device 56 may only capture a portion (which may be a negligible portion) of the first light beam that is diffusely reflected by the thin line brightness as a first response.

In some embodiments, at least one mirror 54 can be used to point to a first beam of thin line brightness to or toward the wafer surface, for example, the first thin line illuminator 52a is oriented in space or arranged to be incident (eg, A thin line illuminator 52a is arranged to emit a first beam of thin line brightness along a vertical axis, as shown in Figure 27c) a first angle of angle that emits a first line of thin line brightness.

In addition to the above, a first beam of thin line brightness is supplied to or toward the wafer surface, and a second beam of at least one thin line brightness (eg, provided by the second thin line illuminator 52b) can be incident relative to the vertical axis. The second angle is directed to or toward the plane of the wafer 12, wherein the magnitude of the incident second angle is significantly different from the brightness response angle. According to current reflection or scattering properties of the wafer position, if the second beam of thin line brightness is incident on the wafer position with mirror-polished, the second beam of thin line brightness will follow an angle other than the brightness response angle. Total reflection, and image capture device 56 may take a negligible portion or a second beam of substantially thin line brightness without total reflection as a second response. If the second beam of thin line brightness is incident on a second beam having a thin line brightness at a wafer position that is not mirror-polished, the image capture device 56 can be captured along the brightness response angle. The defined optical path scatters or diffusesly reflects a portion of the reflected second line of brightness of the second beam as a second response.

In a typical application, the brightness response angle can be about 45°, and the first angle of incidence can therefore also be about 45°. In such an application, the first angular separation Θ1 between the brightness response angle and the incident first angle may be equal to or approximately equal to 90°. Additionally, the second angle of incidence may be approximately 0° with respect to the vertical axis, ie, the second beam of thin line brightness may be directed along the vertical axis to the plane of the wafer 12. In such an application, the second angular separation Θ2 between the brightness response angle and the incident second angle may be equal to or approximately equal to 45°. When the second beam of thin line brightness is incident on the wafer location having the mirror-like surface, the second beam of thin line brightness is total reflection back along the vertical axis. When the second beam of thin line brightness is incident on the wafer position having the surface of the non-mirror form, the image capturing device 56 can extract a portion of the second beam of the thin line brightness that is scattered or diffusely reflected along the 45° angle. .

As noted above, the brightness characteristics (or semiconductor component) surface characteristics or properties and/or distribution characteristics of a particular location, portion or region of the wafer 12 will affect or determine the location, portion or region of the wafer 12 that is considered for such brightness. The relative possibility of total reflection or scattering. In general, certain locations, regions, or distribution characteristics of a particular wafer 12 (or other semiconductor component) are preferably or more suitably examined as a result of detecting total reflection brightness, while other locations, regions, or distribution features are preferred or Check the result as the detected scatter or diffuse reflection brightness more appropriately.

For example, solder balls on the surface of the wafer can more accurately capture the brightness of the thin line that is scattered by the solder balls. In contrast, the reflection or highly reflective flat or smooth portions, regions or surfaces of the wafer 12 can more accurately be examined by thin line brightness that draws total reflection away from the wafer surface. In accordance with an aspect of the present disclosure, Θ1 is separated at different angles (eg, by a first angle between a first beam of thin line brightness and a brightness response angle of 90°, and a second brightness between thin lines) A second angular separation of the beam and the brightness response angle of 45° Θ 2) simultaneously pointing the thin line brightness to a particular target location or region of the wafer 12 produces a total reflection response and a scatter response that are simultaneously captured for the target location. The total reflection response and the scatter response can be simultaneously captured by image capture device 56 as a single overlapping response including a total reflection response and a scatter response.

For the sake of brevity and clarity, the following description of the additional portion of process 950 provides for incident first and second angles and/or first and second angular separations Θ1 and Θ2 as defined above. However, it will be appreciated that within the scope of the present disclosure, the thin line brightness may be directed at other angles to the wafer 12, such as 25°, 30°, 50°, 60° or 75°, such that the total reflection response and the scatter response can be simultaneously The ground is generated as an overlapping response, and the image capturing device 56 can retrieve the overlapping response.

In various embodiments of the present disclosure, the thin line brightness supplied or emitted by the first thin line illuminator 52a is directed at the wafer 12 (or the plane of the wafer 12) by about 45[deg.] with respect to the vertical axis, It is called 45° thin line brightness. The thin line brightness supplied or emitted by the second thin line illuminator 52b is directed to the wafer 12 (or the plane of the wafer 12) at about 0[deg.] with respect to the vertical axis, hereinafter referred to as 0[deg.] thin line brightness.

In the third processing portion 956, the thin line luminance emitted by each of the first and second thin line illuminators 52a and 52b is reflected off the wafer 12 disposed at the detection location (eg, as total reflection and/or The result of the scattering) or a portion of the wafer 12.

In many embodiments, the 45° thin line brightness of the scattered or reflective wafer 12 and the 0° thin line brightness can be overlapped to provide or create overlapping thin line brightness. The overlapping thin line brightness may include or implement one or more properties, characteristics, and/or benefits or advantages with respect to each 45° thin line brightness and 0° thin line brightness. Accordingly, the overlapping thin line brightness can contribute to or have the ability of the wafer 12 to be detected in a manner that indicates whether the wafer position corresponds to a highly reflective or mirror-form surface or a non-mirror-form surface in this case.

In the fourth processing portion 958, the overlapping thin line brightness reflected off the wafer 12 is transmitted through the 3D contour target lens 58, which has an infinite aberration calibration. Accordingly, the overlapping thin line brightness transmitted through the 3D contour target lens 58 is aimed at the overlapping thin line brightness.

In the fifth processing portion 960, the overlapping thin line brightness is aimed through the tubular lens 60. As described above, the tubular lens 60 facilitates or completes focusing the overlapping thin line brightness onto the image capture plane of the 3D contour camera 56.

In the sixth processing portion 962, the overlapping thin line brightness enters the 3D contour camera 56. In some embodiments, the 3D contour camera 56 is a monochrome camera. In other embodiments, the 3D contour camera 56 is a color camera that has the ability to receive, capture, distinguish, identify, and/or separate thin line brightness at different wavelengths.

The seventh processing portion 964 includes capturing the first 3D contour image. For the purposes of the present disclosure, a 3D contour image or 3D image may be referred to as an image that includes, provides, or transmits information or signals corresponding to a three-dimensional characteristic surface or structure (eg, surface or structural geology). In addition, the 3D contour image may also be referred to as a response or optical response captured by the 3D contour camera 56.

In the eighth processing portion 966, the first 3D contour image is converted into an image signal and transmitted to the CPU. In a ninth processing portion 968, the first 3D contour image or its image signal is processed by a CPU for at least one 3D height measurement, coplanar measurement, and detection and/or classification on the wafer 12.

In several embodiments of the present disclosure, the processing portions 952 to 968 can repeatedly capture any number of corresponding 3D images and transmit the captured 3D images to the CPU. The processing portions 952 through 968 can perform a selected image capture position along the wafer scan movement path or along the entire wafer scan movement path of the entire wafer 12.

In accordance with an embodiment of the present disclosure, process 950 can have the ability to direct wafer 12 at 45° and 0° to detect wafer 12 (and/or other semiconductor components) using thin line brightness. The 45° thin line brightness and the 0° thin line brightness can overlap as a result of the brightness response angle reflection, and thus are simultaneously captured by the image capture device 56. Thus, in various embodiments, process 900 has the ability to detect and/or analyze the distribution characteristics or characteristics of different forms of wafers simultaneously or substantially simultaneously.

Optical detection in view of the relative intensity of the brightness of thin lines emitted by different thin line illuminators

In a particular embodiment of the present disclosure, the 45° thin line brightness and the relative intensity of the 0° thin line brightness may be controlled according to requirements, such as selection and/or change, such as according to the characteristics, properties, and/or distribution of the wafer 12. feature.

More specifically, the 45° thin line brightness and the relative intensity of the 0° thin line brightness can be independently controlled based on thin lines that are captured or inspected relative to the beam intensity of the thin line brightness scattering or diffuse reflection. The intensity of the luminance totally reflected beam is independently controlled. Typically, for first and second beams having a thin line brightness of approximately equal intensity, the first beam of total reflected thin line brightness excludes a higher intensity of the second beam that is higher or comparable to the brightness of the scattered thin line. Thus, the first beam of total reflection thin line brightness can enhance the capture or inspection of a response signal having a larger size than the second beam of the thin line of the scattered thin line.

In a specific embodiment, the intensity of the response signal is increased by the brightness of the total reflection thin line by about the balance or the adjustment of the intensity of the response signal by the brightness of the scattered thin line, by the first thin line illuminator 52a (also That is, the 45° thin line luminance) intensity of the emitted thin line luminance can be reduced relative to the intensity of the thin line luminance emitted by the second thin line illuminator 52b (i.e., 0° thin line luminance). For example, a thin line luminance emitted by the first thin line illuminator 52a (i.e., 45° thin line brightness) of about 20% or 30% intensity can be used relative to the second thin line illuminator 52b (i.e., 0°). Thin line brightness) emits an intensity of approximately 70% or 80% thin line brightness.

The relative intensity of the brightness of the thin line supplied or emitted by the thin line illuminators 52a, 52b can be controlled, for example by the CPU. In a particular embodiment, the relative intensity of the thin line luminance supplied or emitted by the thin line illuminators 52a, 52b can be controlled accordingly, for example to select and/or change the maximum and/or change response of the image capture device 56. The smallest size.

While examples of relatively thin line brightness intensity values are provided in the disclosure of the present invention, it will be appreciated that corresponding to the first and second thin line illuminators 52a, 52b, other relative thin line brightness intensity values may also be selected as desired, Application or use, for example, according to particular properties, characteristics, and/or distribution characteristics of wafer 12.

Use thin line brightness different wavelengths and effects

In several embodiments, the wavelengths at which the particular system 10 is supplied or emits thin line luminance by different thin line illuminators 52 are the same or substantially the same. However, in other embodiments, the wavelengths of thin line luminance supplied or emitted by different thin line illuminators 52 of system 10 are different or substantially different.

In a particular embodiment of the invention disclosed in relation to system 27c, the wavelength of the thin line luminance emitted by the first thin line illuminator 52a (e.g., the first beam of thin line brightness) is different from the second thin line. Illuminator 52b (eg, a second beam of thin line brightness) emits a wavelength of thin line brightness. In other words, in a particular embodiment, the 45° thin line brightness wavelength is different from the 0° thin line brightness wavelength.

The brightness of the thin lines of different wavelengths may overlap after being reflected and/or scattered away from the wafer 12 and simultaneously captured by the image capture device 56. In many embodiments, wherein the wavelength of the thin line luminance emitted by the thin line illuminator 52 is different, the image capturing device 56 is a color camera. Color cameras can help or have the ability to receive, capture, distinguish, separate, and/or identify thin line brightness at different wavelengths.

When the beams of different thin line luminances emitted by the different thin line illuminators 52 are of the same wavelength, they do not need to be immediately identified or separated differently after being overlapped. Thus, in some examples, beams of different thin line luminances emitted by different thin line illuminators 52 are of the same wavelength, and crosstalk (crosstalk), interference or interaction may be present between beams of different brightness of thin lines. Accordingly, the response retrieved by image capture device 56 can adversely affect.

However, when the thin line luminances supplied or emitted by the different thin line illuminators 52 (for example, the first and second thin line illuminators 52a, 52b) are different wavelengths, crosstalk can be alleviated or eliminated, and by one The thin line luminance emitted by the thin line illuminator (eg, the first thin line illuminator 52a) can be quickly varied by the thin line brightness emitted by the different thin line illuminators (eg, the second thin line illuminator 52b) Individually identified or separated.

In most embodiments, the difference between the different beam wavelengths emitted by the different thin line illuminators is at least about 30 nm to reduce or eliminate crosstalk, and thus the different beams that enhance the brightness of the thin line. Differences in accuracy, identification and/or separation.

In a particular embodiment, the first thin line illuminator 52a has a 45° thin line brightness wavelength between about 200 nm and 750 nm, such as 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, or 600 nm, and 0° thin. The line brightness has a wavelength of at least about 30 nm, for example, about 50 nm, 75 nm, 100 nm, 150 nm, or 200 nm, which is different from the 45° thin line brightness.

In other embodiments, the first thin line illuminator 52a can output a brightness having a corresponding color red center wavelength while the second thin line illuminator 52b can output a brightness having a corresponding color blue or green center wavelength. In addition, the first thin line illuminators 52a may each output a brightness having a corresponding blue or green center wavelength, and the second thin line illuminators may each output a brightness having a corresponding green or blue center wavelength.

In the embodiment in which the image capturing device 56 captures different light beams of thin line brightness, the identifiable and/or individual processing can be individually obtained, used and/or obtained by using or relating to the brightness of each light beam. Store.

For example, the 45° thin line brightness wavelength is different from the 0° thin line brightness wavelength and can be processed by the image capture device (ie, the overlap of 45° thin line brightness and 0° thin line brightness). The response is to extract information that is specifically or uniquely related to each 45° thin line brightness and 0° thin line brightness.

In several embodiments of the present disclosure, the intermediate and/or final results of processing portions 952 through 968 and their repetitions (e.g., results obtained by 3D image processing) are stored in a database of the CPU. In other embodiments of the present disclosure, the results of processing portions 952 through 968 and their repetition (e.g., results obtained by 3D image processing) are stored in other databases or memory spaces as needed.

Figures 28a and 28b illustrate a typical manner in which thin line brightness is reflected from the surface of wafer 12 in different directions (and therefore different optical travel paths), wherein the surface of wafer 12 can cause reflective thin lines of different or unequal strength brightness. Figure 28b shows the position along the wafer 12, i.e., the thin line brightness is reflected off the position of P1 to P9 of the wafer 12, where the positions of P2 to P8 are related to the 3D features on the wafer 12. In some embodiments, the 3D features of the P2 to P8 locations include or contain artifacts or sources of optical noise.

Reflected by the surface of the wafer 12, the reflected thin line brightness (or thin line brightness reflected light beam) exits the surface of the wafer 12 along the multiple optical path of travel.

Figure 29 depicts first and second responses, respectively, along the luminance movements corresponding to the first and second optical travel paths, which are generated by the 3D contour camera 56 at each of positions P1 through P9. Each response (or optical response) corresponds to a particular thin line brightness intensity, distribution, pattern, and/or level, which corresponds to each surface of P1 to P9 with respect to wafer surface profile or 3D characteristics or geology.

As previously described, the reflection of the thin line brightness away from the surface of the wafer 12 depends on the 3D characteristics or geology of the wafer 12, such as structures, features, germanium, and/or optical noise or scattering contained on the surface of the wafer 12. The existence and/or characteristics of the source.

Accordingly, in many embodiments, the relative profiles of the first response and the second response are at a predetermined location (eg, locations P1 through P9) along the surface of the wafer 12 depending on the surface along the wafer 12 at the predetermined location. 3D characteristics or geology.

As shown in FIG. 29, at the first wafer position P1, the thin line brightness reflected along each of the first and second optical travel paths is not affected by the 3D characteristics or geology of the surface of the wafer 12. This is due to the lack of 3D features of the surface of the wafer 12 at position 1. Thus, the intensity of the thin line luminance is reflected in the first and second directions, and accordingly the progression along the first and second optical travel paths is similar or substantially similar. Thus, the reflection of the thin line brightness at the location 1 away from the surface of the wafer 12 causes similar first and second responses.

However, at each position P2 to P8 along the surface of the wafer 12, the reflection of the thin line luminance away from the surface of the wafer 12 is affected by the presence of the 3D features.

For example, along the position P2 of the surface of the wafer 12, the 3D characteristic or geology of the 3D feature causes no reflection of the brightness of the thin line in the first direction, and thus the thin line brightness travels along the first optical travel path, but prevents thin lines The brightness travels along the second optical path (ie, the 3D feature blocks the second optical path). This causes a first response or a first optical response having a higher intensity than the second response or the second optical response. As shown in Fig. 29, at the position P2, the second response is applied to the position P3 in a case where the minimum or zero intensity level is similar, and the 3D feature has a lateral extent or a full length (e.g., width) tied at the position P2.

At position P4, the thin line brightness is reflected along each of the first and second optical travel paths, but the reflection is affected by the enthalpy contained in the 3D feature at position P4. More specifically, the 瑕疵 causes the thin line brightness to be larger in the first direction than the second direction, thus resulting in a first response or a first optical response having a higher intensity than the second response. In various embodiments, the comparison and analysis of the first and second responses facilitates identifying and/or classifying defects present or contained on the surface of the wafer 12.

At position P5, the thin line brightness is a weaker reflection in the first direction and thus along the first optical travel path compared to the second direction, thus along the second optical travel path. This causes the first response to have a lower intensity than the second response. The comparison and analysis of the relative intensities of the first and second responses at a given location (eg, at the P5 location) can help identify and/or classify defects present or contained on the surface of the wafer 12.

As with position P6, which corresponds approximately to the top or apex of the 3D feature, the thin line brightness is approximately equal in each of the first and second directions, and thus along the first and second optical travel paths. Accordingly, the first and second responses are approximately equal or identical.

At each position 7 and 8, the 3D characteristic of the 3D feature or geology produces a reflection of the thin line brightness in the second direction, and thus along the second optical travel path, but prevents reflection of the thin line brightness in the first direction, and thus Along the first optical travel path. As a result, at positions P7 and P8, the second response or the second optical response is present while the first response or first optical response is minimal or zero intensity.

Finally, at position P9, the reflection of the thin line luminance in each of the first and second directions is similar to that described for position P1, and thus is not affected along each of the first and second optical travel paths. . Thus, the first and second responses at position P9 are approximately the same (eg, the same intensity).

In several embodiments, the second 3D wafer scan process 750 and/or the third wafer scan process 950 facilitates or has the ability to capture at least two responses, and thus obtain at least two images, Regarding the 3D characteristics (e.g., 3D features) of the wafer 12 using a single image capture device, such as the 3D contour camera 56. Moreover, in most embodiments, at least two of the responses are retrieved, and thus at least two images are obtained, with respect to the 3D characteristics (e.g., 3D features) of the wafer 12 being simultaneously performed by the 3D contour camera 56.

In various embodiments, at least two responses or at least two images may be combined, composed, or used together (eg, composed) to produce a single representation, image, or image of the 3D characteristics of the wafer 12 (eg, 3D features). In several embodiments, the combination or composition of at least two responses may enhance throughput, such as more accurate 3D characteristics (eg, 3D features) of the wafer 12.

At least two responses can improve the accuracy of the 3D profile survey (profile survey) or detection of the wafer. For example, in various embodiments, at least two responses may be enhanced to enhance the accuracy of the surface defects that may be present on the wafer 12.

Using existing or conventional wafer detection methods, expensive, bulky, and/or complex system or device settings include multiple image capture devices that use multiple responses or images that typically require 3D features. It is also impossible to use an existing wafer detection system and method to simultaneously achieve the image capture of the image capture device or the exposure time of the image capture device. In general, slight non-simultaneity (non-synchronization) between successive image captures may result in unwanted or inappropriate reflections, thus drawing inappropriate or inaccurate images. In addition, due to the generally inconsistent 3D profile of the wafer, the brightness is inconsistent or unevenly reflected off the surface of the wafer for transmission to the image capture device and is captured by the image capture device. Inaccuracies in wafer detection, when using only a single image or optical response, due to structural and geometric variations in the surface of the wafer.

In many of the embodiments disclosed herein, system 10 causes brightness that is reflected off the surface of wafer 12 in multiple different directions to be simultaneously captured by 3D contour camera 56 or 3D image capture device 56. For example, in various embodiments, system 10 causes brightness that is reflected off the surface of wafer 12 in at least a first direction and a second direction to be simultaneously captured by 3D contour camera 56 or 3D image capture device 56, wherein first and first The two directions are at least one divergent and non-parallel. This facilitates or enables multiple optical responses or images (also referred to as images) to be captured or produced at each location along the surface of the wafer 12. Accordingly, many of the embodiments disclosed herein provide for improved accuracy of 3D profile surveying of wafers 12, and thus enhance detection of wafers 12, such as increasing the accuracy of flaw detection.

The use of a single image capture device, and more particularly the use of the 3D image capture device 56, also contributes to or completes the cost and/or space efficiency of the enhanced system 10. Moreover, in various embodiments, the use of a single target lens 58 and a single tubular lens 60 helps to increase the ease, speed, and accuracy of correction for wafer 12 detection or image capture.

Similar or similar to the manner described above with respect to 2D wafer scanning or detection processing, brightness aiming between target lens 58 and tubular lens 60 may increase the ease with which additional optical components are applied to system 10, such as between target lenses. 58 and tubular lens 60 without substantially reconfiguring or rearranging the components that are already present in system 10.

After the first, second or third 3D wafer scanning process 700, 750, 950 is completed, the inspections on the wafer 12 and the locations and their classifications obtained by performing the processing portions 416 and 418 can thus be unified. The uniform 瑕疵, location, and classification thereof facilitate reviewing the calculation of the scan movement path in processing portion 420. In several embodiments of the present disclosure, reviewing the scan movement path is based on the position of the wafer inspection on the wafer 12 along the wafer scan path. Further, the 瑕疵 image capturing position along the review scan moving path is calculated or depends on the processing portion 420. In most of the embodiments disclosed herein, the image capture position corresponds to the position of the wafer 12 (ie, the DROI of wafer 12) during processing portions 416 and 418.

In the processing portion 422 of the specific method 400, a specific review process 800 is performed in accordance with an embodiment of the present disclosure. The review process 800 has the ability to review the checksums in the processing portions 416 and 418. In most embodiments of the present disclosure, the review process 800 occurs through at least a first mode 800a, a second mode 800b, and a third mode 800c.

Specific review processing 800

Figure 26 is a flowchart showing the processing of a specific review process 800 in accordance with an embodiment of the present disclosure.

In most of the embodiments disclosed herein, the review process 800 includes three review modes, named first mode 800a, second mode 800b, and third mode 800c. In step 802, a review mode (i.e., one of the first mode 800a, the second mode 800b, and the third mode 800c) is selected.

Reviewing the first mode 800a of process 800

In step 804 of the review process 800 first mode 800a, during the 2D image processing process 600 executed in step 416 of the method 400, it is checked that all of the first image and the second image system are stored together.

In step 806, the unified and stored first image and the second image are detected on the wafer 12 and uploaded or transmitted to an external storage or server for offline review.

In step 808, wafer 12 is downloaded (i.e., wafer 12 on wafer table 16 is currently in use), and the second wafer is loaded onto wafer table 16 by wafer stack 20 by robotic arm. In step 810, each of steps 804 through 808 is repeated with a second wafer.

Steps 804 through 810 are repeated continuously any number of times, depending on the number of wafers in the wafer stack. The repetition of steps 804 to 810 results in the unification and storage of the first image and the second image by each wafer of the wafer stack 20, and uploading the first image and the second image to an external storage or servo for offline review Device. It is well known to those skilled in the art that the first mode 800a is such that steps 804 through 810 have automatic performance without user intervention and without affecting production. This method allows for continuous production while the user can perform an offline review of the stored images. This approach increases system 10 utilization and productivity.

Reviewing the second mode 800b of the process 800

In step 820 of the review process 800 second mode 800b, some of the review images are retrieved at each of the image capture locations as calculated in step 420. In several embodiments of the present disclosure, reviewing the bright area image and reviewing the dark area image are performed in step 420 using each of the image capturing positions calculated by the review image capturing device 62 as shown in FIG. take. In other words, the review bright area image using bright area illuminator 64 and the review dark area image using dark area illuminator 66 are each captured by 2D image processing routine 600 of step 416. Each number of review images is captured by the review image capture device 62. In several embodiments of the present disclosure, each number of review images is a color image.

It will be apparent to those skilled in the art that the disclosure of the present invention is provided for individually capturing bright area review images and for highlighting the brightness of bright areas and dark area brightness of dark areas as desired and as desired. For example, the intensity of the brightness used to retrieve the number of review images may be based on the form of wafer defects, and the user of system 10 wishes to review or select based on the material of wafer 12. It is also possible to use a variety of combinations of brightness zones and dark zone brightness set by the user and various intensity levels to capture multiple repeat images.

In step 822, the number of review images captured at each image capture location as calculated in step 420 is unified and stored. The unified and stored review images captured at each image capture location are then uploaded to step 824 for offline review of the external storage or server.

In step 826, wafer 12 (i.e., wafer 12 on wafer station 16) is downloaded, and second wafer is loaded from wafer stack 20 to wafer station by mechanical wafer handling device 18. 16 on. In step 828, each of steps 402 through 422 is repeated with a second wafer. The unified and stored first image and the second image are uploaded to an external storage or server on the second wafer.

In the second mode 800b of the review process 800, steps 820 through 828 can be repeated any number of times depending on the number of wafers of the wafer stack 20. Repeated steps 820 through 828 generate unified and stored captured bright region review images and dark region review images obtained for each wafer of wafer stack 20, and upload the first image and the second image for offline review of the external image Storage or server.

This method allows for continuous production while the user can perform an offline review of the stored images. This method allows multiple images of each frame to be captured in various combinations for offline review of brightness without affecting mechanical usability and improving productivity.

Review the third mode 800c of process 800

In most embodiments of the present disclosure, the third mode 800c of the review process 800 is initiated by manual input, and more specifically by a user input or command. In step 840, the user captures the first review bright area image and the first review dark area image by using the first image capturing position. In step 842, the user manually checks or reviews the captured first review bright area image and the first review dark area image. In several embodiments of the present disclosure, the first review bright area image and the first review dark area image are displayed on a screen or monitor for facilitating visual detection by the user. The user can use the bright area and the dark area illuminator to view the 以 in different brightness combinations.

In step 844, the user accepts or rejects or reclassifies the 对应 corresponding to the first image capture location. Steps 840 through 844 are then repeated continuously with each of the image capture positions as calculated in step 420.

After each of the image capture positions is continuously repeated in steps 840 through 844, the actual frame and its classification are then unified and stored in step 846. The unified and stored sputum and its classification are then uploaded or transmitted to the external storage or server in step 848. In the third mode 800c of the review process 800, the wafer 12 (i.e., the wafer 12 on the current wafer table 16) is downloaded only after completion of step 846. Accordingly, those skilled in the art should be aware that the third mode 800c of the review process requires the presence of a continuous user for effective visual inspection or review of each wafer.

In step 848 of the review process 800, the wafer 12 (i.e., the wafer 12 on the current wafer stage 16) is downloaded, and the mechanical wafer handling device 18 is then loaded by the wafer stack 20 into the second wafer to the wafer. On the round table 16. Steps 840 through 848 are repeated any number of times depending on the number of wafers being inspected (or the number of wafers in wafer stack 20).

Those skilled in the art will appreciate that the first mode 800a and the second mode 800b of the review process achieve relatively arbitrary unification, storage, and uploading of captured images to an external storage or server. The first mode 800a and the second mode 800b are represented as automatic review processing. The user can access external storage or servers for offline review of the captured images as needed and when needed. The first mode 800a and the second mode 800b have the ability to continuously review each wafer or continuous image capture, unification, upload, and storage of the wafer stack 20.

It is well known to those skilled in the art that although there are only three review modes, named first mode 800a, second mode 800b, and third mode 800c, which are described in the description of the present invention, those skilled in the art can implement three review modes. Other review processes or different changes or combinations of the steps of each mode of 800a, 800b, and 800c. Moreover, those skilled in the art should be aware of three review modes 800a, 800b, and 800c, each of which may be modified or altered as desired using conventional methods without departing from the scope of the present invention.

After reviewing the performance of process 800, verifying the location and location and its classification are unified and stored in step 426. The verified 瑕疵 and the location and its classification are stored in the database or stored in an external database or memory space. The wafer map is also updated in step 426.

As previously described, each captured bright area image, DHA image, and DLA image is compared to a gold reference or reference image used to identify or detect the wafer 12瑕疵. The specific reference image creation process 900 provided by the present invention (as shown in FIG. 18) facilitates the creation or generation of such reference images. Those skilled in the art will appreciate that reference image creation process 900 may also be referred to as alignment processing.

As previously described, each 2D highlight image, 2D DHA image, 2D DLA image captured during the 2D wafer scan process 500 is preferably matched to its reference image created by the reference image creation process 900.

The specific comparison process has been described using the 2D image processing program 600. However, for the sake of clarity, a summary that matches between the working image and the reference image is provided below. First, in several embodiments of the present disclosure, sub-pixel calibration for selecting a working image is performed using known references, including patterns, traces, bumps, pads, and other unique patterns, but is not limited thereto. .

Secondly, the wafer 12 reference intensity of the working image is calculated at the image capturing position. The appropriate reference image to match the working image is then selected. In several embodiments of the present disclosure, the appropriate reference image is selected by the reference image creation process 900 for multiple reference image selection.

The CPU can be programmable to select and extract appropriate reference images that the working image will match. In most embodiments of the present disclosure, the calculation and storage, normalization of the average or geometric mean of the normalization and storage, the standard deviation, the maximum of each pixel of the reference image of the enhanced speed by the reference image creation process 900, and Minimum intensity and accuracy of extracting the appropriate reference image to the working image.

Then calculate the quantitative data corresponding to each pixel of the working image. The quantitative data is, for example, normalized average or geometric mean, standard deviation, maximum and minimum intensity per pixel of the working image. Then reference or check the quantitative data value of each pixel of the working image compared to the corresponding data value of each pixel of the selected reference image.

The quantitative data value comparison between the pixels of the working image and the pixels of the reference image has the ability to identify or inspect. In most embodiments of the present disclosure, the predetermined threshold is set by the user. The difference between the quantitative data values of the pixels of the working image and the pixels of the reference image is matched to a predetermined threshold having one of increased, additional, and constant values. If the difference between the quantitative data values of the working image pixels and the reference image pixels is greater than a predetermined threshold, it is marked as 瑕疵 (or 瑕疵).

The predetermined threshold can be changed as needed. In several embodiments of the present disclosure, the predetermined threshold may be varied to adjust the stringency of the process 400. In addition, the predetermined threshold may vary depending on the form of the inspection flaw, the need to detect the presence of material or brightness conditions of the wafer 12. Furthermore, the predetermined threshold can be varied according to customer needs or generally according to the needs of the semiconductor industry.

In accordance with an embodiment of the present disclosure, system 10 and process 400 for detecting a semiconductor wafer are as described above. Those skilled in the art who provide the foregoing will appreciate that the completion of the modification system 10 and the process 400 are not inconsistent with the scope of the present disclosure. For example, the sequence of processing portions of process 400 and the sequence of processing steps 500, 600, 700, 750, 800, 900, and 950 can be modified without departing from the scope of the present disclosure.

The present invention discloses that the system 10 and process 400 of various embodiments are aimed at accurate and low cost wafer inspection. The ability of system 10 and process 400 for automatic wafer inspection enhances wafer inspection efficiency as the wafer is moving. This is because the individual wafers used in the detection position of the wafer image are slowed down and stopped without wasting time, and after capturing images using, for example, several existing semiconductor wafer inspection systems, the wafer is detected. The subsequent acceleration of the measured position and the transport time are not wasted. A known image shift between multiple image captures facilitates the processing of the captured image, and thus the flaws examined may be present. The offset of a particular set of images relative to the same wafer can be used to accurately determine the coordinates of the germanium on the wafer and subsequently determine the position of the wafer throughout the frame. The offset is preferably determined by reading the decoded values of the X and Y displacement motors and for calculating the coordinates or 瑕疵 of the 瑕疵. In addition, the two images used at each detection location combine the advantages of two different imaging technologies to facilitate more accurate wafer detection.

It is well known to those skilled in the art that the time synchronization of image capture can be changed as needed. More specifically, time synchronization adjusts the ability of the programmable controller to compensate for image shifts between captured images. The system 10 and process 400 disclosed herein facilitate accurate synchronization between the provided brightness and the orientation of the corresponding image capture device for capturing images to minimize degradation in detection quality.

The brightness used by system 10 can be a fully visible spectrum of light used to enhance quality image capture. The intensity of the brightness used by the system 10 for image capture supply and combinations thereof can be readily selected and varied depending on factors such as the form of the inspection flaw, the wafer material, and the tightness of the wafer detection, but are not limited thereto. The system 10 and process 400 provided by the present disclosure also have the ability to measure 3D component height on a wafer and the ability to analyze 3D contour images while the wafer is moving.

The system 10 disclosed herein has an optical setting (i.e., optical detection head 14) that does not require frequent spatial recombination to conform to changes in wafer structure or characteristics. Moreover, the tubular lens used with system 10 has the ability to easily reassemble and design system 10, and more particularly, to easily reconfigure and design optical detection head 14 of system 10. The tubular lens used readily enhances the use of optical components and equipment, and more particularly, between the target lens and the tubular lens, the optical components, and the use of the system.

The system 10 disclosed herein includes a vibration isolation station 24 (generally known as a stabilizing mechanism) for buffering unwanted vibrations of the system 10. The vibration isolation station 24 helps to enhance the quality of image capture by the first image capture device 32, the second image capture device 34, the 3D contour camera, and the review image capture device 62, and thus helps to enhance the accuracy of the flaw detection. In addition, the XY plot of system 10 has the ability to detect relative positions, accurate wafer displacement, and calibration.

As described in the prior art, existing reference image derivation or setup processes require manual selection of "good" wafers, resulting in relatively inaccurate and inconsistent derivation of the reference image. Accordingly, the quality of wafer inspection has a detrimental effect. In accordance with an embodiment of the present disclosure, system 10 and process 400 achieve the quality of enhanced detection by establishing reference images without the need for manual selection (ie, subjective selection) of "good" wafers. The reference image creation process 900 allows for different critical intensity applications at different locations on the wafer, thus accommodating changes in nonlinear brightness on the wafer. Process 400 thus helps to reduce false or unwanted defect inspections, as well as the quality of the final wafer inspection enhancement.

Embodiments of the present disclosure facilitate or have the ability to automatically detect, using an analysis mode 1 in which the reference image is compared to an image of an unknown quality. The present invention also discloses the ability to have automatic flaw detection, preferably performed by digital analysis on digitized images (i.e., working images and reference images).

Embodiments of the present disclosure facilitate or have the ability to automatically review modes that do not affect production and improve machine utilization, while existing devices only provide manual review modes that require operation by observing different brightness intensities or Decide on each one.

In the foregoing manner, systems, devices, methods, processes, and techniques for detecting semiconductor wafers and components are provided by the various embodiments disclosed herein. Systems, devices, methods, processes, and techniques address at least one of the issues or problems that have been encountered with semiconductor detection systems and methods as described in the prior art. However, it is to be understood by those skilled in the art that the present invention is not limited to the specific forms, arrangements or structures of the embodiments described above. It will be apparent to those skilled in the art that the disclosure may be made without departing from the spirit and scope of the invention.

10. . . system

12. . . Wafer

14. . . Optical detection head

16. . . Wafer chuck

18. . . Mechanical wafer handling device

20. . . Wafer stacking module

twenty two. . . Replacement disk

twenty four. . . Vibration isolation table

26. . . Bright area illuminator

28. . . Low angle dark zone illuminator

30. . . High angle dark zone illuminator

32. . . First image capturing device

34. . . Second image capturing device

36. . . First tubular lens

38. . . Second tubular lens

40. . . Target lens

42. . . Rotatable mount

44. . . Three lens concentrator

47. . . Prism

48. . . First beam splitter

50. . . Second beam splitter

52. . . Thin line illuminator

52a. . . First thin line illuminator

52b. . . Second thin line illuminator

54. . . mirror

54a. . . First set of mirrors

54b. . . Second set of mirrors

56. . . 3D contour camera

58. . . 3D contour target lens

60. . . Tubular lens

62. . . Review image capture device

64. . . Review bright area illuminator

66. . . Review dark area illuminator

68. . . Beam splitter

70. . . Review target lens

72. . . Review tubular lens

74. . . First reflective surface

84a. . . First set of reflectors

84b. . . Second set of reflectors

Α1, α2. . . angle

Θ1. . . First angle separation

Θ2. . . Second angle separation

I1. . . Incident intensity

P1 ~ P9. . . position

100. . . First ray path

200. . . Second ray path

250. . . Third ray path

300. . . Fourth ray path

350. . . Fifth ray path

400, 500, 700, 750, 950. . . deal with

600. . . program

800. . . Review processing

800a. . . First mode

800b. . . Second mode

800c. . . Third mode

900. . . Specific reference image creation processing

102 to 124, 202 to 218, 252 to 268, 302 to 318, 352 to 364, 402 to 424, 502 to 516, 602 to 624, 702 to 718, 752 to 770, 802 to 810, 820 to 828, and 840 to 848, 902 ~ 928, 952 ~ 968. . . step

Particular embodiments of the present disclosure will be described with reference to the following figures, in which:

1 is a partial plan view showing a specific system for detecting a wafer in accordance with a specific embodiment of the present invention;

Figure 2 shows a partial isometric view of the system of Figure 1;

Figure 3 is an isometric view showing an exploded portion of the optical detecting head of the system of Figure 1 according to the broken line "A" in Figure 2;

Figure 4 is an isometric view showing an exploded portion of the automatic wafer stage of the system of Figure 1 according to the broken line "B" in Figure 2;

Figure 5 is an exploded isometric view showing the automatic wafer upload/download of the system of Figure 1 according to the broken line "C" in Figure 2;

Figure 6 is an isometric view showing an exploded portion of the wafer stacking module of the first image system according to the broken line "D" in Fig. 2;

Figure 7 is a partial isometric view of the optical pickup of the system of Figure 1;

Figure 8 is a partial front elevational view of the optical pickup of the system of Figure 1;

Figure 9 shows the optical light of the brightness between the bright area illuminator, the low angle dark area illuminator, the high angle dark area illuminator, the first image capturing device and the second image capturing device of the system of Fig. 1. path;

Figure 10 is a flow chart showing a specific first ray path for supplying brightness of a bright area by the bright area illuminator of Figure 9;

Figure 11 is a flow chart showing a specific second ray path of the dark area high angle brightness supplied by the high angle dark area illuminator of Figure 9;

Figure 12 is a flow chart showing a specific third ray path of the dark region low angle luminance supplied by the low angle dark region illuminator of Figure 9;

Figure 13 illustrates a light path of brightness between a thin line illuminator of the system and a 3D image capture device or camera, in accordance with an embodiment of the present disclosure;

Figure 14 shows the optical ray path of the brightness between the review bright area illuminator, the review dark area illuminator, and the review image capture device in the system of Figure 1;

Figure 15 is a flow chart of the specific fourth ray path following the brightness of the bright area between the review bright area illuminator of Figure 14 and the review image capturing device;

Figure 16 is a flow chart of the specific fifth ray path between the review dark area illuminator and the review image capturing device, following the dark area brightness;

FIG. 17 is a flowchart of a process for detecting a wafer program according to an embodiment of the present invention;

Figure 18 is a flowchart showing a process of establishing a reference image establishing process for establishing a reference image compared to image capturing during the processing performance of Figure 17 according to an embodiment of the present invention;

Figure 19 is a process flow diagram of performing a specific two-dimensional wafer scanning process with time offset during processing of Figure 17 in accordance with an embodiment of the present disclosure;

Figure 20 shows a graph of the brightness configuration selectable by the brightness configurator of the system of Figure 1;

Figure 21 is a timing chart showing a first image captured by the first image capturing device and a second image captured by the second image capturing device;

Figure 22a shows a first image captured by the first image capturing device of Figure 1;

Figure 22b shows a second image captured by the second image capturing device of Figure 1;

Figure 22c shows a combined first image of Fig. 22a and a second image of Fig. 22b for showing an image shift of the first image and the second image when the wafer is moving;

Figure 23 is a process flow diagram of a two-dimensional image program processing performed in the processing of Figure 17 in accordance with an embodiment of the present disclosure;

Figure 24 is a process flow diagram of a first specific three-dimensional wafer scanning process performed in the process of Figure 17 in accordance with an embodiment of the present disclosure;

Figure 25 is a process flow diagram of a second specific three-dimensional wafer scanning process performed in the processing of Figure 17 in accordance with an embodiment of the present disclosure;

Figure 26 is a process flow diagram of a specific review process performed in the process of Figure 17 in accordance with an embodiment of the present disclosure;

Figure 27a illustrates a specific optical ray path of brightness between a thin line illuminator and a 3D image capture device or camera, in accordance with an embodiment of the present disclosure;

Figure 27b illustrates another optical ray path of brightness between the two thin line illuminators and the 3D image capture device or camera, in accordance with other embodiments of the present disclosure;

Figure 27c illustrates another optical ray path of brightness between the two thin line illuminators and the 3D image capture device or camera, in accordance with other embodiments of the present disclosure;

Figure 28a illustrates the reflection of the brightness away from the surface of the semiconductor wafer, the brightness of the reflection being used to generate a first response and a second response;

Figure 28b illustrates the brightness reflection along the multiple locations P1 to P9 of the surface of the semiconductor wafer of Figure 28a, and subsequently received by the image capture device;

Figure 29 shows a specific first response and a second response for each of positions P1 to P9 of Figure 28b;

Figure 30 is a process flow diagram of a third three-dimensional (3D) wafer scanning process in accordance with a particular embodiment of the present disclosure.

12. . . Wafer

52. . . Thin line illuminator

54. . . mirror

56. . . 3D contour camera

58. . . 3D contour target lens

84a. . . First set of reflectors

84b. . . Second set of reflectors

Claims (22)

An apparatus for detecting a surface of a substrate in a detecting state, comprising: a thin line illuminator for simultaneously directing a first light beam incident on one of the thin line luminances at a first incident angle ???a target position on the surface of the substrate in the measured state to generate a first response, the first response is corresponding to the reflection of the first light beam from the surface along a brightness response angle; and one of the thin line brightness incident The second light beam is directed to the target position on the surface of the substrate in the detected state at a second incident angle to generate a second response, the second response is corresponding to the second light beam responding to the brightness from the surface The angle is reflected such that the first response and the second response are superimposed according to the reflection of the first beam and the second beam; and an image capturing device comprising a 3D contour camera for the 3D contour camera Extracting the superimposed first response and the second response as a single image, wherein the first incident angle, the second incident angle, and the luminance response angle are relative to a vertical axis of the surface of the substrate definition The first incident angle has a value that matches the brightness response angle, and the second incident angle has a value different from the brightness response angle, wherein the thin line illuminator comprises: a first thin line illuminator For the incident of the thin line brightness a light beam; and a second thin line illuminator or the first thin line illuminator coupled to a mirror for supplying the incident second light beam of thin line brightness. The apparatus of claim 1, wherein the incident first light beam and the incident second light beam are overlapped in a cross-sectional area of the surface of the substrate, and the vertical axis is relative to the substrate One of the surfaces of the surface is defined at approximately the midpoint of one of the cross-sectional areas. The apparatus of claim 1, wherein the first light beam and the second light beam have the same wavelength. The apparatus of claim 1, wherein the first beam and the second beam have different wavelengths. The device of claim 1, wherein the device further comprises: a processing unit configured to establish or adjust a relative intensity of one of the incident first beams relative to the incident second beam. The device of claim 1, further comprising: a target lens assembly for receiving the superimposed first and second responses. The apparatus of claim 1, wherein the thin line illuminator comprises at least one thin line illuminator for supplying thin line illumination along an axis, the shaft being captured with the image capturing device One of parallel and non-parallel axes of the superimposed first and second response single images, wherein the image capturing device is configured to simultaneously capture the superimposed first and second responses By providing the table corresponding to the substrate Information about one of the three-dimensional features. The apparatus of claim 4, wherein the thin line illuminator comprises: a first thin line illuminator for providing the incident first light beam of a first wavelength; and a second thin line The illuminator is configured to provide the incident second light beam of a second wavelength, the first wavelength being at least about 30 nm apart from the second wavelength. The device of claim 7, wherein the surface is a surface of a semiconductor device, and the first response and the second response are separated from the surface of the semiconductor device and reflected along the response angle and The receiving means of the image capturing means for the superimposed first and second responses occurs when the semiconductor device is moving. The device of claim 1, further comprising a processing unit coupled to the image capturing device, the processing unit configured to receive the superimposed first and second responses and process the corresponding substrate Information on the three-dimensional characteristics of the surface. The apparatus of claim 10, wherein the processing unit is operative to generate a mixed response to facilitate identification of one of the surfaces. A method for detecting a surface of a substrate in a detecting state, comprising: a second beam incident on one of the thin line luminances and a second line incident on the brightness of the thin line by using a thin line illuminator Beam supply to a target position on the surface of the substrate in the detecting state, wherein the thin line illuminator comprises: a first thin line illuminator for supplying the incident first light beam of thin line brightness; and a first a second thin line illuminator or the first thin line illuminator coupled to a mirror for supplying the incident second light beam of thin line brightness, wherein the incident first light beam has a first incident angle and the incident The second beam has a second incident angle different from the first incident angle, which is based on a vertical axis of the surface of the substrate; generating a first response corresponding to the first beam from the surface A brightness responds to the reflection of the angle and produces a second response, the first response being superimposed on the second response, and the second response is corresponding to the reflection of the second beam from the surface along the brightness response angle; And as a single image by using the image capturing device including one of the 3D contour cameras while capturing the superimposed first response and the second response. The method of claim 12, wherein the incident first light beam and the incident second light beam are overlapped in a cross-sectional area of the surface of the substrate, and the vertical axis is relative to the substrate One of the surfaces of the surface is defined at approximately the midpoint of one of the cross-sectional areas. The method of claim 12, wherein the first beam has the same wavelength as the second beam. The method of claim 12, wherein the first beam and the second beam have different wavelengths. The method of claim 12, further comprising providing a target lens assembly for receiving the superimposed first and second responses and directing them to the image capture device. The method of claim 12, further comprising establishing or adjusting an intensity of the incident first beam relative to the incident second beam. The method of claim 12, wherein the thin line illuminator comprises at least one thin line illuminator for supplying thin line illumination along an axis, the axis being captured with the image capturing device One of a parallel and non-parallel axis along which the first image of the first and second responses is superimposed, wherein the image capturing device is configured to simultaneously capture the first and second responses to provide a pair Information on the three-dimensional characteristics of one of the surfaces of the substrate. The method of claim 15, wherein the thin line illuminator comprises: a first thin line illuminator for providing the incident first light beam of a first wavelength; and a second thin line The illuminator is configured to provide the incident second light beam of a second wavelength, the first wavelength being at least about 30 nm apart from the second wavelength. The method of claim 18, wherein the surface is a surface of a semiconductor device, and the reflection of the first light beam and the second light beam from the surface of the semiconductor device and the image capturing device pair The superimposed first and second responsive receiving lines occur when the semiconductor device is moving. The method of claim 12, further comprising: receiving the first response by a processing unit coupled to the image capturing device; receiving the second response by the processing unit; and processing the first A response and the second response are used to determine information about a three-dimensional feature of the surface of the substrate. The method of claim 21, further comprising generating a mixed response to facilitate identification of one of the surfaces.