TWI533468B - Light emitting element and illumination device thereof - Google Patents

Light emitting element and illumination device thereof Download PDF

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Publication number
TWI533468B
TWI533468B TW102116429A TW102116429A TWI533468B TW I533468 B TWI533468 B TW I533468B TW 102116429 A TW102116429 A TW 102116429A TW 102116429 A TW102116429 A TW 102116429A TW I533468 B TWI533468 B TW I533468B
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light
illuminating
emitting
transparent substrate
bracket
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TW102116429A
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Chinese (zh)
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TW201349563A (en
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李承鴻
葉時有
湯士杰
蒲計志
鄭惟綱
潘錫明
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璨圓光電股份有限公司
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Priority to TW102116429A priority Critical patent/TWI533468B/en
Priority to CN201310191958.9A priority patent/CN103456869B/en
Priority to CN2013202827664U priority patent/CN203300693U/en
Priority to CN201610696438.7A priority patent/CN106252491A/en
Priority to CN2013202827950U priority patent/CN203277498U/en
Priority to CN2013202827772U priority patent/CN203277380U/en
Priority to CN201310191943.2A priority patent/CN103456728B/en
Priority to CN2013202827946U priority patent/CN203277485U/en
Priority to JP2013112370A priority patent/JP6504739B2/en
Priority to US13/903,998 priority patent/US20130320363A1/en
Priority to JP2013111835A priority patent/JP6367526B2/en
Priority to US13/904,038 priority patent/US9123868B2/en
Priority to EP18196452.9A priority patent/EP3454369A1/en
Priority to DE202013012509.8U priority patent/DE202013012509U1/en
Priority to DE202013012711.2U priority patent/DE202013012711U1/en
Priority to KR1020130061001A priority patent/KR102129533B1/en
Priority to DE202013012729.5U priority patent/DE202013012729U1/en
Priority to DE202013012548.9U priority patent/DE202013012548U1/en
Priority to EP21197696.4A priority patent/EP3951869A1/en
Priority to DE202013012707.4U priority patent/DE202013012707U1/en
Priority to EP13169790.6A priority patent/EP2669946B1/en
Priority to EP18185878.8A priority patent/EP3415807B1/en
Priority to EP13169803.7A priority patent/EP2669947B1/en
Priority to EP21186715.5A priority patent/EP3961706A1/en
Priority to KR1020130061002A priority patent/KR20130133696A/en
Priority to DE202013012554.3U priority patent/DE202013012554U1/en
Priority to DE202013012698.1U priority patent/DE202013012698U1/en
Priority to US14/089,708 priority patent/US9368483B2/en
Publication of TW201349563A publication Critical patent/TW201349563A/en
Priority to US14/218,869 priority patent/US9488321B2/en
Priority to US14/218,944 priority patent/US20180006199A9/en
Priority to US14/340,574 priority patent/US9711490B2/en
Application granted granted Critical
Publication of TWI533468B publication Critical patent/TWI533468B/en
Priority to US15/631,482 priority patent/US10030857B2/en
Priority to JP2018002356A priority patent/JP6629359B2/en
Priority to US16/016,401 priority patent/US10281123B2/en
Priority to JP2018128212A priority patent/JP6680834B2/en
Priority to US16/404,187 priority patent/US10655826B2/en
Priority to KR1020190145749A priority patent/KR102139291B1/en
Priority to JP2020049778A priority patent/JP7050841B2/en
Priority to US16/876,987 priority patent/US10989396B2/en
Priority to KR1020200078506A priority patent/KR102246243B1/en
Priority to KR1020200091689A priority patent/KR102287651B1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
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    • H01L2224/05552Shape in top view
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
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    • H01L2224/732Location after the connecting process
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    • HELECTRICITY
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Description

發光元件及其發光裝置 Light-emitting element and light-emitting device thereof

本發明係關於一種發光元件以及使用該發光元件之發光裝置,尤指一種多方向出光之發光元件及具有此發光元件之發光裝置。 The present invention relates to a light-emitting element and a light-emitting device using the same, and more particularly to a light-emitting element that emits light in multiple directions and a light-emitting device having the light-emitting element.

發光二極體(light emitting diode,LED)本身所發出來的光是偏向一種指向性的光源,並非如一般市售的燈泡為一種發散型的光源,因此在應用上會受到限制。舉例而言,在一般室內外照明的燈具上的應用並無法達到所需要的光型。另外,習知發光二極體發光裝置僅可單面發光,因此具有較低的發光效率。 The light emitted by the light emitting diode (LED) itself is biased toward a directional light source. It is not a general-purpose light bulb as a divergent light source, and thus it is limited in application. For example, applications on general indoor and outdoor lighting fixtures do not achieve the desired light profile. In addition, the conventional light-emitting diode light-emitting device can emit light only on one side, and thus has low luminous efficiency.

本發明之目的之一在於提供一種至少多方向出光之發光元件以及使用該元件之發光裝置,以提升發光效率、改善光型並節省成本。 It is an object of the present invention to provide a light-emitting element that emits light in at least a plurality of directions and a light-emitting device using the same to improve luminous efficiency, improve light quality, and save cost.

本發明之一較佳實施例提供一種發光元件,包括一透明基板以及複數個發光二極體晶片。透明基板具有一承載面與一第二主表面彼此相對設置。至少部分之發光二極體晶片係設置於承載面上,並與未設置發光二極體晶片之部分承載面形成可發光之一第一主表面。各發光二極體晶片包括一第一電極與一第二電極。至少一個發光二極體晶片之發光方向包括經過透明基板並從第二主表面出光。 A preferred embodiment of the present invention provides a light emitting device including a transparent substrate and a plurality of light emitting diode chips. The transparent substrate has a bearing surface and a second main surface disposed opposite to each other. At least a portion of the light emitting diode chip is disposed on the carrying surface and forms a first main surface illuminable with a portion of the bearing surface on which the light emitting diode chip is not disposed. Each of the LED chips includes a first electrode and a second electrode. The direction of illumination of the at least one light emitting diode wafer includes passing through the transparent substrate and emitting light from the second major surface.

本發明之一較佳實施例提供一種發光裝置,包括至少一發光元件,及一承載座。發光元件包括一透明基板以及複數個發光二極體晶片。透明基板具有一承載面與一第二主表面彼此相對設置。至少部分之發光二極體晶片係設置於承載面上,並與未設置發光二極體晶片之部分承載面形成可發光之一第一主表面。各發光二極體晶片包括一第一電極與一第二電極。至少一個發光二極體晶片之發光方向包括經過透明基板並從第二主表面出光。發光元件係設置於承載座上,並與承載座間有一第一夾角。 A preferred embodiment of the present invention provides a light emitting device including at least one light emitting element and a carrier. The light emitting element includes a transparent substrate and a plurality of light emitting diode chips. The transparent substrate has a bearing surface and a second main surface disposed opposite to each other. At least a portion of the light emitting diode chip is disposed on the carrying surface and forms a first main surface illuminable with a portion of the bearing surface on which the light emitting diode chip is not disposed. Each of the LED chips includes a first electrode and a second electrode. The direction of illumination of the at least one light emitting diode wafer includes passing through the transparent substrate and emitting light from the second major surface. The light-emitting component is disposed on the carrier and has a first angle with the carrier.

本發明之另一較佳實施例提供一種發光元件,包括一透明基板與至少一發光二極體晶片。透明基板具有一承載面與一第二主表面彼此相對設置。發光二極體晶片設置於承載面上,並與未被發光二極體晶片覆蓋之部分承載面形成可發光之第一主表面。發光二極體晶片包括一第一電極與一第二電極。發光二極體晶片之一出光角大於180度,且透明基板容許發光二極體晶片所發出一光線穿透。 Another preferred embodiment of the present invention provides a light emitting device including a transparent substrate and at least one light emitting diode wafer. The transparent substrate has a bearing surface and a second main surface disposed opposite to each other. The light emitting diode chip is disposed on the bearing surface and forms a first main surface that can emit light with a portion of the bearing surface that is not covered by the light emitting diode chip. The LED chip includes a first electrode and a second electrode. One of the light-emitting diode chips has an exit angle of more than 180 degrees, and the transparent substrate allows a light from the light-emitting diode chip to penetrate.

本發明之另一較佳實施例提供一種發光元件,包括一透明基板以及至少一發光二極體晶片。其中透明基板材質係包括藍寶石並具有一承載面。發光二極體晶片係設置於承載面上。發光二極體晶片之出光角度係大於180度。其中發光二極體晶片所發出之至少部分光線可穿透透明基板,並從對應承載面之一第二主表面出光。 Another preferred embodiment of the present invention provides a light emitting device including a transparent substrate and at least one light emitting diode wafer. The transparent substrate material includes sapphire and has a bearing surface. The light emitting diode chip is disposed on the carrying surface. The light exiting angle of the light emitting diode chip is greater than 180 degrees. At least part of the light emitted by the LED chip can penetrate the transparent substrate and emit light from one of the second main surfaces of the corresponding bearing surface.

本發明之另一較佳實施例提供一種發光元件,包括一透明基板、至少一發光二極體晶片以及一能量轉換層。透明基板具有一承載面。發光二極體晶片係設置於承載面上,並與未被發光二極體晶片覆蓋之部分承載面形成可發光之一第一主表面。發光二極體晶片之一出光角度係大於180度。其中該發光二極體晶片所發出之至少部分光線可穿透透明基板,並從對應承載 面之一第二主表面出光。能量轉換層係至少設置於發光二極體晶片或第二主表面之上,且能量轉換層係至少部分吸收發光二極體晶片所發出光線並轉換為另一波長範圍之光線。 Another preferred embodiment of the present invention provides a light emitting device including a transparent substrate, at least one light emitting diode wafer, and an energy conversion layer. The transparent substrate has a bearing surface. The light-emitting diode chip is disposed on the carrying surface and forms a first main surface that can emit light with a portion of the bearing surface that is not covered by the light-emitting diode wafer. One of the light-emitting diode chips has an exit angle of more than 180 degrees. Wherein at least part of the light emitted by the LED chip can penetrate the transparent substrate and be carried from the corresponding carrier One of the second major surfaces of the face emits light. The energy conversion layer is disposed on at least the light emitting diode chip or the second main surface, and the energy conversion layer at least partially absorbs the light emitted by the light emitting diode chip and converts the light into another wavelength range.

本發明之另一較佳實施例提供一種發光元件,包括一透明基板以及複數個發光二極體晶片。透明基板具有一承載面。發光二極體晶片係設置於承載面上,各發光二極體晶片未被透明基板遮蔽的一發光面,與未被發光二極體晶片覆蓋之部分承載面共同形成可發光之一第一主表面。發光二極體晶片之一出光角度係大於180度,且該發光二極體晶片所發出之至少部分光線可穿透透明基板,並從對應承載面之一第二主表面出光,其中第一主表面或第二主表面之面積係為發光二極體晶片之發光面之總面積5倍以上。 Another preferred embodiment of the present invention provides a light emitting device including a transparent substrate and a plurality of light emitting diode chips. The transparent substrate has a bearing surface. The light-emitting diode chip is disposed on the bearing surface, and a light-emitting surface of each of the light-emitting diode chips not shielded by the transparent substrate is formed together with a part of the bearing surface not covered by the light-emitting diode wafer to form one of the first light-emitting surface. The light exiting angle of one of the light emitting diode chips is greater than 180 degrees, and at least part of the light emitted by the light emitting diode chip can penetrate the transparent substrate and emit light from a second main surface of the corresponding bearing surface, wherein the first main The area of the surface or the second major surface is more than 5 times the total area of the light-emitting surface of the light-emitting diode chip.

本發明之另一較佳實施例提供一種發光元件,包括一透明基板、至少一類鑽碳膜以及至少一發光二極體晶片。透明基板具有一承載面。類鑽碳膜係設置於透明基板上。發光二極體晶片係設置於承載面上。發光二極體晶片未被透明基板遮蔽的一發光面,與未被發光二極體晶片覆蓋之部分承載面共同形成可發光之一第一主表面,且該發光二極體晶片之一出光角度係大於180度。其中該發光二極體晶片所發出之至少部分光線可穿透透明基板,並從對應承載面之一第二主表面出光。 Another preferred embodiment of the present invention provides a light emitting device including a transparent substrate, at least one type of drilled carbon film, and at least one light emitting diode wafer. The transparent substrate has a bearing surface. The diamond-like carbon film system is disposed on a transparent substrate. The light emitting diode chip is disposed on the carrying surface. a light-emitting surface of the light-emitting diode chip not shielded by the transparent substrate, and a part of the bearing surface not covered by the light-emitting diode chip together form a first main surface that can emit light, and one light-emitting angle of the light-emitting diode chip The system is greater than 180 degrees. At least part of the light emitted by the LED chip can penetrate the transparent substrate and emit light from one of the second main surfaces of the corresponding bearing surface.

本發明之另一較佳實施例提供一種發光元件,包括一透明基板、至少一發光二極體晶片以及一反射鏡。透明基板具有一承載面,且反射鏡係設置於透明基板上對應承載面之一第二主表面上。發光二極體晶片係設置於承載面上。發光二極體晶片未被透明基板遮蔽的一發光面,與未被發光二極體晶片覆蓋之部分承載面共同形成可發光之一第一主表面,且發光二極體晶片之一出光角度係大於180度。 Another preferred embodiment of the present invention provides a light emitting device including a transparent substrate, at least one light emitting diode chip, and a mirror. The transparent substrate has a bearing surface, and the mirror is disposed on the second main surface of the corresponding one of the corresponding bearing surfaces on the transparent substrate. The light emitting diode chip is disposed on the carrying surface. a light-emitting surface of the light-emitting diode chip not shielded by the transparent substrate, and a part of the bearing surface not covered by the light-emitting diode chip together form a first main surface that can emit light, and one light-emitting angle of the light-emitting diode chip More than 180 degrees.

本發明之另一較佳實施例提供一種發光元件,包括一透明基板、至少一發光二極體晶片、一第一連接電極以及一第二連接電極。透明基板具有一承載面。發光二極體晶片係設置於承載面上,並與未被發光二極體晶片覆蓋之部分承載面形成可發光之一第一主表面,且發光二極體晶片之一出光角度係大於180度。其中發光二極體晶片所發出之至少部分光線可穿透透明基板,並從對應承載面之一第二主表面出光。第一連接電極以及第二連接電極係分別設置於透明基板上相對的兩端,且第一連接電極與第二連接電極係分別與發光二極體晶片電性連結。 Another preferred embodiment of the present invention provides a light emitting device including a transparent substrate, at least one light emitting diode chip, a first connecting electrode, and a second connecting electrode. The transparent substrate has a bearing surface. The light emitting diode chip is disposed on the bearing surface and forms a first main surface that can emit light with a portion of the bearing surface not covered by the LED chip, and one of the light emitting diodes has an exit angle greater than 180 degrees. . At least part of the light emitted by the LED chip can penetrate the transparent substrate and emit light from one of the second main surfaces of the corresponding bearing surface. The first connection electrode and the second connection electrode are respectively disposed on opposite ends of the transparent substrate, and the first connection electrode and the second connection electrode are electrically connected to the LED substrate.

本發明之另一較佳實施例提供一種發光裝置,包括一發光元件以及一支架。發光元件包括一透明基板、至少一發光二極體晶片、一第一連接電極以及一第二連接電極。透明基板具有一承載面。發光二極體晶片係設置於承載面上,並與未被發光二極體晶片覆蓋之部分承載面形成可發光之一第一主表面,且發光二極體晶片之一出光角度係大於180度。其中發光二極體晶片所發出之至少部分光線可穿透透明基板,並從對應承載面之一第二主表面出光。第一連接電極以及第二連接電極係分別設置於透明基板上相對的兩端,且第一連接電極與第二連接電極係分別與發光二極體晶片電性連結。支架包括至少一缺口,且發光元件係與缺口對應設置。 Another preferred embodiment of the present invention provides a light emitting device including a light emitting element and a bracket. The light emitting device includes a transparent substrate, at least one light emitting diode chip, a first connecting electrode and a second connecting electrode. The transparent substrate has a bearing surface. The light emitting diode chip is disposed on the bearing surface and forms a first main surface that can emit light with a portion of the bearing surface not covered by the LED chip, and one of the light emitting diodes has an exit angle greater than 180 degrees. . At least part of the light emitted by the LED chip can penetrate the transparent substrate and emit light from one of the second main surfaces of the corresponding bearing surface. The first connection electrode and the second connection electrode are respectively disposed on opposite ends of the transparent substrate, and the first connection electrode and the second connection electrode are electrically connected to the LED substrate. The bracket includes at least one notch, and the light emitting element is disposed corresponding to the notch.

本發明之另一較佳實施例提供一種發光裝置,包括複數個發光元件以及一裝置基座。各發光元件包括一透明基板、至少一發光二極體晶片、一第一連接電極以及一第二連接電極。透明基板具有一承載面。發光二極體晶片係設置於承載面上,並與未被發光二極體晶片覆蓋之部分承載面形成可發光之一第一主表面,且發光二極體晶片之一出光角度係大於180度。其中發光二極體晶片所發出之至少部分光線可穿透透明基板,並從對應承載面之 一第二主表面出光。第一連接電極以及第二連接電極係分別設置於透明基板上相對的兩端,且第一連接電極與第二連接電極係分別與發光二極體晶片電性連結。裝置基座包括一承載座以及複數個支架自承載座向外延伸設置。各支架包括至少一缺口,且各發光元件係與至少部分之缺口對應設置。 Another preferred embodiment of the present invention provides a light emitting device including a plurality of light emitting elements and a device base. Each of the light emitting elements includes a transparent substrate, at least one light emitting diode chip, a first connecting electrode and a second connecting electrode. The transparent substrate has a bearing surface. The light emitting diode chip is disposed on the bearing surface and forms a first main surface that can emit light with a portion of the bearing surface not covered by the LED chip, and one of the light emitting diodes has an exit angle greater than 180 degrees. . At least part of the light emitted by the LED chip can penetrate the transparent substrate and be from the corresponding bearing surface A second major surface emits light. The first connection electrode and the second connection electrode are respectively disposed on opposite ends of the transparent substrate, and the first connection electrode and the second connection electrode are electrically connected to the LED substrate. The base of the device includes a carrier and a plurality of brackets extending outward from the carrier. Each of the brackets includes at least one notch, and each of the light-emitting elements is disposed corresponding to at least a portion of the notch.

本發明之另一較佳實施例提供一種發光裝置,包括複數個發光元件以及一燈條。各發光元件包括一透明基板、至少一發光二極體晶片、一第一連接電極以及一第二連接電極。透明基板具有一承載面。發光二極體晶片係設置於承載面上,並與未被發光二極體晶片覆蓋之部分承載面形成可發光之一第一主表面,且發光二極體晶片之一出光角度係大於180度。其中發光二極體晶片所發出之至少部分光線可穿透透明基板,並從對應承載面之一第二主表面出光。第一連接電極以及第二連接電極係分別設置於透明基板上相對的兩端,且第一連接電極與第二連接電極係分別與發光二極體晶片電性連結。燈條包括複數個缺口。燈條具有一延伸方向,複數個缺口係沿延伸方向排列設置,且各發光元件係與至少部分之缺口對應設置。 Another preferred embodiment of the present invention provides a light emitting device including a plurality of light emitting elements and a light bar. Each of the light emitting elements includes a transparent substrate, at least one light emitting diode chip, a first connecting electrode and a second connecting electrode. The transparent substrate has a bearing surface. The light emitting diode chip is disposed on the bearing surface and forms a first main surface that can emit light with a portion of the bearing surface not covered by the LED chip, and one of the light emitting diodes has an exit angle greater than 180 degrees. . At least part of the light emitted by the LED chip can penetrate the transparent substrate and emit light from one of the second main surfaces of the corresponding bearing surface. The first connection electrode and the second connection electrode are respectively disposed on opposite ends of the transparent substrate, and the first connection electrode and the second connection electrode are electrically connected to the LED substrate. The light bar includes a plurality of notches. The light bar has an extending direction, a plurality of notches are arranged along the extending direction, and each of the light emitting elements is disposed corresponding to at least a portion of the notch.

本發明之另一較佳實施例提供一種發光裝置,包括複數個發光元件以及一承載座。各發光元件包括一透明基板、至少一發光二極體晶片、一第一連接電極以及一第二連接電極。透明基板具有一承載面。發光二極體晶片係設置於承載面上,並與未被發光二極體晶片覆蓋之部分承載面形成可發光之一第一主表面,且發光二極體晶片之一出光角度係大於180度。其中發光二極體晶片所發出之至少部分光線可穿透透明基板,並從對應承載面之一第二主表面出光。第一連接電極以及第二連接電極係分別設置於透明基板上相對的兩端,且第一連接電極與第二連接電極係分別與發光二極體晶片電性連結。承載座包括複數個缺口,且複數個缺口係以一陣列方式排列設置,發光元件係與至少部分之缺口對應設置。 Another preferred embodiment of the present invention provides a light emitting device including a plurality of light emitting elements and a carrier. Each of the light emitting elements includes a transparent substrate, at least one light emitting diode chip, a first connecting electrode and a second connecting electrode. The transparent substrate has a bearing surface. The light emitting diode chip is disposed on the bearing surface and forms a first main surface that can emit light with a portion of the bearing surface not covered by the LED chip, and one of the light emitting diodes has an exit angle greater than 180 degrees. . At least part of the light emitted by the LED chip can penetrate the transparent substrate and emit light from one of the second main surfaces of the corresponding bearing surface. The first connection electrode and the second connection electrode are respectively disposed on opposite ends of the transparent substrate, and the first connection electrode and the second connection electrode are electrically connected to the LED substrate. The carrier includes a plurality of notches, and the plurality of notches are arranged in an array, and the light-emitting elements are disposed corresponding to at least a portion of the notches.

本發明之另一較佳實施例提供一種發光裝置之裝置基座,包括一承載座以及複數個支架。各支架係自承載座向外延伸設置,各支架包括至少一缺口以及複數個電極分別設置於缺口的兩側。 Another preferred embodiment of the present invention provides a device base for a light-emitting device, including a carrier and a plurality of brackets. Each of the brackets extends outwardly from the carrier, and each of the brackets includes at least one notch and a plurality of electrodes respectively disposed on both sides of the notch.

本發明之發光裝置將發光二極體晶片固設於透明基板上,而透明基板可容許發光二極體晶片所發出光線穿透。因此本發明之發光裝置可至少多方向或全方向發光、提高發光效率並可改善習知發光二極體之光型不佳的問題。 The illuminating device of the present invention fixes the illuminating diode chip on the transparent substrate, and the transparent substrate can allow the light emitted by the illuminating diode chip to penetrate. Therefore, the light-emitting device of the present invention can emit light at least in multiple directions or in all directions, improve luminous efficiency, and can improve the problem of poor light type of the conventional light-emitting diode.

1、310‧‧‧發光元件 1, 310‧‧‧Lighting elements

2‧‧‧透明基板 2‧‧‧Transparent substrate

3、14‧‧‧發光二極體晶片 3, 14‧‧‧Lighting diode chip

4‧‧‧能量轉換層 4‧‧‧ energy conversion layer

5、26、324‧‧‧承載座 5, 26, 324‧‧‧ bearing seat

6‧‧‧電路基板 6‧‧‧ circuit board

7、7’‧‧‧燈殼 7, 7'‧‧‧ lamp shell

8‧‧‧反射鏡 8‧‧‧Mirror

9、25‧‧‧類鑽碳膜 9,25‧‧‧Drilling carbon film

10、10’、11、50、301、302、303、304‧‧‧發光裝置 10, 10', 11, 50, 301, 302, 303, 304‧‧‧ illuminating devices

12M‧‧‧非平面結構 12M‧‧‧ non-planar structure

16、31A‧‧‧第一電極 16, 31A‧‧‧ first electrode

18、31B‧‧‧第二電極 18, 31B‧‧‧ second electrode

20、23A‧‧‧第一連接導線 20, 23A‧‧‧First connecting wire

21A‧‧‧第一主表面 21A‧‧‧ first major surface

21B‧‧‧第二主表面 21B‧‧‧Second major surface

22、23B‧‧‧第二連接導線 22, 23B‧‧‧ second connecting wire

28‧‧‧晶片接合層 28‧‧‧ wafer bonding layer

28A‧‧‧第一晶片接合層 28A‧‧‧First wafer bonding layer

28B‧‧‧第二晶片接合層 28B‧‧‧Second wafer bonding layer

30、32‧‧‧電極 30, 32‧‧‧ electrodes

34‧‧‧發光面 34‧‧‧Lighting surface

51‧‧‧支架 51‧‧‧ bracket

52‧‧‧元件接合層 52‧‧‧Component junction

60‧‧‧承載機構 60‧‧‧Loading mechanism

61‧‧‧插槽 61‧‧‧ slots

62‧‧‧支架 62‧‧‧ bracket

63‧‧‧元件接合層 63‧‧‧Component junction

64‧‧‧底座 64‧‧‧Base

71‧‧‧罩面 71‧‧‧ Cover

141‧‧‧基底 141‧‧‧Base

142‧‧‧N型半導體層 142‧‧‧N type semiconductor layer

143‧‧‧主動層 143‧‧‧ active layer

144‧‧‧P型半導體層 144‧‧‧P type semiconductor layer

210‧‧‧承載面 210‧‧‧ bearing surface

311A‧‧‧第一連接電極 311A‧‧‧First connection electrode

311B‧‧‧第二連接電極 311B‧‧‧Second connection electrode

321‧‧‧支架 321‧‧‧ bracket

322‧‧‧裝置基座 322‧‧‧Device base

323‧‧‧燈條 323‧‧‧Light strips

330‧‧‧缺口 330‧‧‧ gap

342‧‧‧條狀部 342‧‧‧ Strip

350A‧‧‧第一連外電極 350A‧‧‧First external electrode

350B‧‧‧第二連外電極 350B‧‧‧Second external electrode

360‧‧‧裝置框架 360‧‧‧ device framework

D‧‧‧距離 D‧‧‧Distance

G‧‧‧缺口 G‧‧‧ gap

H‧‧‧孔洞 H‧‧‧ Hole

L‧‧‧光線 L‧‧‧Light

P‧‧‧電路圖案 P‧‧‧ circuit pattern

S‧‧‧空間 S‧‧‧ Space

V+‧‧‧驅動電壓 V+‧‧‧ drive voltage

V-‧‧‧驅動電壓 V-‧‧‧ drive voltage

θ1‧‧‧第一夾角 Θ1‧‧‧ first angle

X‧‧‧延伸方向 X‧‧‧ extending direction

第1A圖與第1B圖繪示了本發明之一較佳實施例之發光元件的結構示意圖。 1A and 1B are schematic views showing the structure of a light-emitting element according to a preferred embodiment of the present invention.

第2A圖、第2B圖與第2C圖繪示了本發明之一較佳實施例之不同形式的發光二極體晶片耦接於導線之示意圖。 2A, 2B, and 2C are schematic views showing the coupling of different forms of LED chips to a wire according to a preferred embodiment of the present invention.

第3A圖與第3B圖繪示了本發明之一較佳實施例之能量轉換層之佈置示意圖。 3A and 3B are schematic views showing the arrangement of the energy conversion layer of a preferred embodiment of the present invention.

第4A圖繪示了本發明之另一較佳實施例之發光元件的剖面示意圖。 4A is a cross-sectional view showing a light-emitting element according to another preferred embodiment of the present invention.

第4B圖繪示了本發明之另一較佳實施例之發光元件的剖面示意圖。 FIG. 4B is a cross-sectional view showing a light emitting device according to another preferred embodiment of the present invention.

第5圖繪示了本發明之另一較佳實施例之發光元件的示意圖。 Fig. 5 is a schematic view showing a light-emitting element of another preferred embodiment of the present invention.

第6A圖繪示了本發明之一較佳實施例之承載座之示意圖。 Figure 6A is a schematic view of a carrier of a preferred embodiment of the present invention.

第6B圖繪示了本發明之一較佳實施例之電路基板之示意圖。 FIG. 6B is a schematic view showing a circuit substrate according to a preferred embodiment of the present invention.

第6C圖繪示了本發明之一較佳實施例之反射鏡之示意圖。 Figure 6C is a schematic view of a mirror of a preferred embodiment of the present invention.

第6D圖繪示了本發明之一較佳實施例之類鑽碳膜之示意圖。 Figure 6D is a schematic view showing a carbon-like carbon film according to a preferred embodiment of the present invention.

第7A圖繪示了本發明之一較佳實施例之發光裝置之示意圖。 FIG. 7A is a schematic view of a light emitting device according to a preferred embodiment of the present invention.

第7B圖繪示了本發明之另一較佳實施例之發光裝置之示意圖。 FIG. 7B is a schematic diagram of a light emitting device according to another preferred embodiment of the present invention.

第8圖繪示了本發明之另一較佳實施例之發光裝置的外觀示意圖。 FIG. 8 is a schematic view showing the appearance of a light-emitting device according to another preferred embodiment of the present invention.

第9A圖、第9B圖與第9C圖繪示了本發明之一較佳實施例之透明基板插接或黏接於承載座之示意圖。 9A, 9B, and 9C are schematic views showing the transparent substrate being inserted or bonded to the carrier in a preferred embodiment of the present invention.

第10A圖與第10B圖繪示了本發明之一較佳實施例之透明基板黏接於具支架之承載座之示意圖。 10A and 10B are schematic views showing a transparent substrate adhered to a carrier having a holder according to a preferred embodiment of the present invention.

第11圖繪示了本發明之另一較佳實施例之發光裝置的立體示意圖。 11 is a perspective view of a light emitting device according to another preferred embodiment of the present invention.

第12圖繪示了本發明之另一較佳實施例之發光裝置之裝置基座的立體示意圖。 Figure 12 is a perspective view showing the base of the device of the light-emitting device according to another preferred embodiment of the present invention.

第13圖繪示了本發明之另一較佳實施例之發光裝置的立體示意圖。 Figure 13 is a perspective view showing a light-emitting device according to another preferred embodiment of the present invention.

第14A圖、第14B圖、第14C圖與第14D圖繪示了本發明之一較佳實施例之以點對稱或線對稱排列透明基板於承載機構上之俯視示意圖。 14A, 14B, 14C, and 14D illustrate a top view of a transparent substrate arranged in a point-symmetric or line-symmetric manner on a carrier mechanism in accordance with a preferred embodiment of the present invention.

第15圖繪示了本發明之另一較佳實施例之發光裝置的示意圖。 Figure 15 is a schematic view showing a light-emitting device according to another preferred embodiment of the present invention.

第16A圖與第16B圖繪示了本發明之一較佳實施例之燈殼之示意圖。 16A and 16B are schematic views of a lamp housing in accordance with a preferred embodiment of the present invention.

第16C圖繪示了本發明之一較佳實施例之廣告看板式燈殼之俯視剖面示意圖。 Figure 16C is a schematic cross-sectional view showing an advertising kanban lamp housing in accordance with a preferred embodiment of the present invention.

第16D圖、第16E圖、第16F圖與第16G圖繪示了本發明之一較佳實施例之球泡燈式之實施示意圖。 16D, 16E, 16F and 16G are schematic views showing the implementation of a bulb lamp according to a preferred embodiment of the present invention.

第17圖繪示了本發明之另一較佳實施例之燈條的示意圖。 Figure 17 is a schematic view showing a light bar of another preferred embodiment of the present invention.

第18圖繪示了本發明之另一較佳實施例之發光裝置的立體示意圖。 Figure 18 is a perspective view showing a light-emitting device according to another preferred embodiment of the present invention.

第19圖繪示了本發明之另一較佳實施例之發光裝置的示意圖。 Figure 19 is a schematic view showing a light-emitting device according to another preferred embodiment of the present invention.

請參考第1A圖與第1B圖,第1A圖與第1B圖為本發明之一較佳實施例之發光元件或發光板的結構示意。如第1A圖與第1B圖所示,發光元件1係包括:一透明基板2;一承載面210;一第一主表面21A;一第二主表面21B以及至少一多方向出光發光二極體晶片3。其中,為平板薄片狀的透明基板2本身具有兩個主要面體,其中之任一主要面體係為承載面210, 具有發光功能的發光二極體晶片3設置於此承載面210之上,且發光二極體晶片3未被透明基板2遮蔽的一發光面34,與未設置發光二極體晶片3之至少部分承載面210共同形成可發光的第一主表面21A。透明基板2未設有發光二極體晶片3的另一主要面體則為第二主表面21B。前述佈置方式反之亦可,且亦可於基板兩個面均佈置發光二極體晶片3,其中兩個面上的發光二極體晶片3係可對應交錯排列,使各面上的發光二極體晶片3發光時,光線可順利穿透透明基板2並從另一面出光,而不被另一面上的發光二極體晶片遮蔽,增加單位面積之發光強度。透明基板2的材質可為氧化鋁(Al2O3)、含有氧化鋁的藍寶石、碳化矽(SiC)、玻璃、塑膠或是橡膠,其中,本發明較佳實施例之一係採用藍寶石基板,因為此材料大體上為單晶結構,不但具有較好的透光率,且散熱能力佳,可延長發光元件1的壽命;但使用傳統藍寶石基板於本發明中會有易碎裂的問題,故本發明經實驗驗證,本發明之透明基板2較佳係選用厚度在大於或等於200微米(um)的藍寶石基板,如此可達成較佳的可靠度,並有較佳的承載以及透光功能。同時為有效達成發光元件1雙向或多方向甚至全方向出光之目的,本發明之發光二極體晶片3較佳係可選用出光角度大於180度者。如此,當本發明在使用時,設置於透明基板2的上的發光二極體晶片3除發光面34會發出往遠離基板方向離開之光線外,發光二極體晶片3亦會發出至少部分進入透明基板2之光線,而進入透明基板2之光線除從透明基板2上對應第一主表面21A的第二主表面21B出光外,亦可從透明基板2的未設置發光二極體晶片3之部分承載面210與其他表面出光,使發光元件1可以至少雙面出光、多方向出光或全方向出光。於本發明中,第一主表面21A或第二主表面21B之面積係為發光面34之總和面積的五倍以上,此係兼顧到發光效率以及散熱等條件而為較佳的配置比例。 Please refer to FIG. 1A and FIG. 1B. FIG. 1A and FIG. 1B are schematic diagrams showing the structure of a light-emitting element or a light-emitting panel according to a preferred embodiment of the present invention. As shown in FIG. 1A and FIG. 1B, the light-emitting element 1 includes: a transparent substrate 2; a bearing surface 210; a first main surface 21A; a second main surface 21B; and at least one multi-directional light-emitting diode. Wafer 3. The transparent substrate 2 having a flat sheet shape itself has two main faces, one of which is a bearing surface 210, and the light emitting diode chip 3 having a light emitting function is disposed on the carrying surface 210, and A light-emitting surface 34 of the light-emitting diode chip 3 that is not shielded by the transparent substrate 2 forms a first main surface 21A that can emit light together with at least a portion of the load-bearing surface 210 on which the light-emitting diode chip 3 is not disposed. The other main surface of the transparent substrate 2 on which the light-emitting diode wafer 3 is not provided is the second main surface 21B. The foregoing arrangement may be reversed, and the LED body 3 may be disposed on both sides of the substrate, and the LEDs 3 on the two sides may be staggered correspondingly to make the LEDs on each surface When the bulk wafer 3 emits light, the light can smoothly penetrate the transparent substrate 2 and emit light from the other surface without being shielded by the light-emitting diode chip on the other surface, thereby increasing the luminous intensity per unit area. The transparent substrate 2 may be made of alumina (Al 2 O 3 ), alumina-containing sapphire, tantalum carbide (SiC), glass, plastic or rubber. One of the preferred embodiments of the present invention uses a sapphire substrate. Since the material is substantially a single crystal structure, not only has a good light transmittance, but also has a good heat dissipation capability, and the life of the light-emitting element 1 can be prolonged; however, the use of a conventional sapphire substrate may cause fragility in the present invention. The invention has been experimentally verified that the transparent substrate 2 of the present invention is preferably a sapphire substrate having a thickness of 200 μm or more, which can achieve better reliability and better carrying and light transmitting functions. At the same time, in order to effectively achieve the bidirectional or multi-directional or even omnidirectional light-emitting of the illuminating element 1, the illuminating diode chip 3 of the present invention preferably has a light-emitting angle greater than 180 degrees. Therefore, when the present invention is in use, the light-emitting diode chip 3 disposed on the transparent substrate 2 emits light at least away from the substrate, and the light-emitting diode chip 3 also emits at least part of the light. The light of the transparent substrate 2, and the light entering the transparent substrate 2 may be emitted from the second main surface 21B of the transparent substrate 2 corresponding to the first main surface 21A, or the light emitting diode chip 3 of the transparent substrate 2 may not be disposed. The partial bearing surface 210 emits light with other surfaces, so that the light-emitting element 1 can emit light at least on both sides, emit light in multiple directions, or emit light in all directions. In the present invention, the area of the first main surface 21A or the second main surface 21B is five times or more the total area of the light-emitting surface 34, which is a preferable arrangement ratio in consideration of conditions such as luminous efficiency and heat dissipation.

另外,本發明之另一較佳實施例是發光元件1之第一主表面21A與第二主表面21B所發出光線之色溫差異等於或小於1500K,使發光元件1 有更全面一致之發光效果。而於透明基板2的透光特性上,當發光二極體晶片3發出光線之波長範圍大於或等於420奈米,及/或當該光線之波長範圍小於或等於470奈米時,在前述透明基板2厚度條件下,透明基板2之光穿透率係大於或等於70%。 In addition, another preferred embodiment of the present invention is that the color temperature difference between the first main surface 21A and the second main surface 21B of the light-emitting element 1 is equal to or less than 1500K, so that the light-emitting element 1 Have a more comprehensive and consistent lighting effect. In the light transmission characteristic of the transparent substrate 2, when the wavelength range of the light emitted from the LED chip 3 is greater than or equal to 420 nm, and/or when the wavelength range of the light is less than or equal to 470 nm, the transparent Under the condition of the thickness of the substrate 2, the light transmittance of the transparent substrate 2 is greater than or equal to 70%.

本發明並不以上述實施例為限。下文將依序介紹本發明之其它較佳實施例,且為了便於比較各實施例之相異處並簡化說明,在下文之各實施例中使用相同的符號標注相同的元件,且主要針對各實施例之相異處進行說明,而不再對重覆部分進行贅述。 The present invention is not limited to the above embodiments. Other preferred embodiments of the present invention will be described in the following, and in order to facilitate the comparison of the various embodiments and the simplification of the description, the same elements are denoted by the same symbols in the following embodiments, and mainly for each implementation. The differences between the examples are explained, and the repeated parts are not described again.

請參考第2A圖、第2B圖與第2C圖,本發明為了獲得供電以進行發光,發光二極體晶片3本身包括第一電極31A與第二電極31B,此第一電極31A與第二電極31B則分別與位於透明基板2上之第一連接導線23A以及第二連接導線23B電性連接。其中,第2A圖、第2B圖與第2C圖分別揭示了不同形式的發光二極體晶片3以及與導線之耦接方式。第2A圖係為橫式發光二極體晶片,其中發光二極體晶片3係形成於透明基板2之承載面210上,第一電極31A與第二電極31B係以打線方式分別電性耦接於第一連接導線23A與第二連接導線23B;第2B圖係為覆晶式發光二極體晶片,發光二極體晶片3係倒置並藉第一電極31A與第二電極31B與透明基板2耦接,其中第一電極31A與第二電極31B係分別以焊接或黏接方式電性耦接於第一連接導線23A與第二連接導線23B;第2C圖則是於發光二極體晶片3之兩端設置第一電極31A與第二電極31B,並將發光二極體晶片3以直立設置的方式使第一電極31A與第二電極31B分別與第一連接導線23A以及第二連接導線23B相連接。 Referring to FIGS. 2A, 2B, and 2C, in order to obtain power for illumination, the LED 3 itself includes a first electrode 31A and a second electrode 31B, and the first electrode 31A and the second electrode 31B is electrically connected to the first connecting wire 23A and the second connecting wire 23B on the transparent substrate 2, respectively. Among them, FIGS. 2A, 2B, and 2C respectively disclose different forms of the LED chip 3 and the manner of coupling with the wires. 2A is a horizontal light emitting diode chip, wherein the light emitting diode chip 3 is formed on the bearing surface 210 of the transparent substrate 2, and the first electrode 31A and the second electrode 31B are electrically coupled by wire bonding. The first connecting wire 23A and the second connecting wire 23B; the second drawing is a flip-chip light emitting diode chip, and the light emitting diode chip 3 is inverted and the first electrode 31A and the second electrode 31B and the transparent substrate 2 are borrowed. The first electrode 31A and the second electrode 31B are electrically coupled to the first connecting wire 23A and the second connecting wire 23B respectively by soldering or bonding; the 2Cth drawing is for the LED 3 The first electrode 31A and the second electrode 31B are disposed at both ends, and the first electrode 31A and the second electrode 31B are respectively disposed in an upright manner with the first connecting wire 23A and the second connecting wire 23B. Connected.

請參考第3A圖與第3B圖,本發明之發光元件1可更包括一能量 轉換層4,其係設置於第一主表面21A或/與第二主表面21B之上,或是直接設置於發光二極體晶片3上,且其可直接接觸於發光二極體晶片3,或是與發光二極體晶片3相鄰一段距離而不直接接觸。能量轉換層4係含有至少一種螢光粉,如石榴石系、硫酸鹽系或矽酸鹽系等等無機或有機材質之螢光粉,以接收並轉換至少部分發光二極體晶片3所發出光線之波長為另一種波長範圍。例如,當發光二極體晶片3發出藍光,能量轉換層4就會轉換部分藍光為黃光,而使發光元件1在藍光與黃光混合之下最後發出白光。另外由於第一主表面21A光源主要是發光二極體晶片3的發光面直接出光,而第二主表面21B光源則是發光二極體晶片3的光線穿透透明基板2發出的光,兩個表面的光線強度不同,故本發明之另一較佳實施例係發光元件1於第一主表面21A與第二主表面21B上的能量轉換層4之螢光粉含量係相應配置,其中第一主表面21A對第二主表面21B上的螢光粉(或發光二極體晶片上的螢光粉對第二主表面21B上的螢光粉)含量比例範圍較佳的可從1比0.5至1比3,使發光元件1的光線強度或光形可以符合應用需求,以及使發光元件1之第一主表面21A與第二主表面21B所發出光線之色溫差異等於或小於1500K,提升發光元件1之波長轉換效率與發光效果。 Referring to FIGS. 3A and 3B, the light-emitting element 1 of the present invention may further include an energy. The conversion layer 4 is disposed on the first main surface 21A or/and the second main surface 21B, or is directly disposed on the LED 3, and is directly in contact with the LED 3, Or it is adjacent to the light-emitting diode chip 3 at a distance without direct contact. The energy conversion layer 4 contains at least one kind of phosphor powder, such as garnet, sulfate or citrate, inorganic or organic phosphor powder, for receiving and converting at least part of the LED chip 3 The wavelength of the light is another wavelength range. For example, when the light-emitting diode chip 3 emits blue light, the energy conversion layer 4 converts part of the blue light to yellow light, and causes the light-emitting element 1 to finally emit white light under the mixture of blue light and yellow light. In addition, since the light source of the first main surface 21A is mainly the light emitting surface of the light emitting diode chip 3, and the light source of the second main surface 21B is the light of the light emitting diode chip 3, the light emitted by the transparent substrate 2, two The light intensity of the surface of the light-emitting element 1 is correspondingly configured on the first main surface 21A and the second main surface 21B. The ratio of the proportion of the main surface 21A to the phosphor powder on the second main surface 21B (or the phosphor powder on the light-emitting diode wafer to the phosphor powder on the second main surface 21B) may preferably range from 1 to 0.5 to 1 to 3, the light intensity or light shape of the light-emitting element 1 can be adapted to the application requirements, and the difference in color temperature between the first main surface 21A and the second main surface 21B of the light-emitting element 1 is equal to or less than 1500K, and the light-emitting element is improved. 1 wavelength conversion efficiency and luminous effect.

請參考第4A圖。第4A圖繪示了本發明之另一較佳實施例之發光元件1的剖面示意圖。如第4A圖所示,本實施例之發光元件10包括一透明基板2與至少一多方向出光之發光二極體晶片14。透明基板2具有一承載面210與一第二主表面21B彼此相對設置。發光二極體晶片14設置於透明基板2之承載面210上,且發光二極體晶片14包括一第一電極16與一第二電極18,用以作外部電性連接。發光二極體晶片14未被透明基板2遮蔽的一發光面34,與未被發光二極體晶片14覆蓋之部分承載面210共同形成一第一主表面21A。 Please refer to Figure 4A. Fig. 4A is a cross-sectional view showing a light-emitting element 1 according to another preferred embodiment of the present invention. As shown in FIG. 4A, the light-emitting element 10 of the present embodiment includes a transparent substrate 2 and at least one light-emitting diode wafer 14 that emits light in multiple directions. The transparent substrate 2 has a bearing surface 210 and a second main surface 21B disposed opposite to each other. The LED chip 14 is disposed on the bearing surface 210 of the transparent substrate 2, and the LED chip 14 includes a first electrode 16 and a second electrode 18 for external electrical connection. A light emitting surface 34 of the light emitting diode chip 14 that is not shielded by the transparent substrate 2 forms a first main surface 21A together with a portion of the bearing surface 210 that is not covered by the light emitting diode chip 14.

發光二極體晶片14可包括一基底141、一N型半導體層142、一主動層143與一P型半導體層144。在本實施例中,發光二極體晶片14之基底141可利用一晶片接合層28黏著於透明基板2上。晶片接合層28除了用來黏著發光二極體晶片14之外,在材料的選擇上,晶片接合層28的折射率較佳可介於基底141的折射率與透明基板2的折射率之間,藉此可增加出光量。此外,晶片接合層28可為一透明膠或其他適合之接合材料。第一電極16與第二電極18係相對晶片接合層28設置於發光二極體晶片14之另一面,並分別與P型半導體層144以及N型半導體層142電性連接(圖未示第二電極18與N型半導體層142之連接關係)。第一電極16與第二電極18的上表面係位於相同水平位置且可為金屬電極,但不以此為限。此外,發光元件1更包括一第一連接導線20、一第二連接導線22以及一能量轉換層4。第一連接導線20與第二連接導線22係設置於透明基板2上。第一連接導線20與第二連接導線22可為例如金屬連接導線或其他導電圖案,但不以此為限。第一電極16與第二電極18係分別與第一連接導線20與第二連接導線22電性連接,且連接方式可利用打線方式(wire bonding)或焊接方式,但不以此為限。能量轉換層4係設置於透明基板12上,並可包覆發光二極體晶片14。此外,能量轉換層4更可進一步設置並覆蓋透明基板2之第二主表面21B。 The LED wafer 14 can include a substrate 141, an N-type semiconductor layer 142, an active layer 143, and a P-type semiconductor layer 144. In the present embodiment, the substrate 141 of the LED wafer 14 can be adhered to the transparent substrate 2 by a die bonding layer 28. The wafer bonding layer 28 has a refractive index of the wafer bonding layer 28 preferably between the refractive index of the substrate 141 and the refractive index of the transparent substrate 2, in addition to the bonding of the LED wafer 14. Thereby, the amount of light can be increased. Additionally, the die attach layer 28 can be a clear adhesive or other suitable bonding material. The first electrode 16 and the second electrode 18 are disposed on the other side of the LED array 14 opposite to the wafer bonding layer 28, and are electrically connected to the P-type semiconductor layer 144 and the N-type semiconductor layer 142, respectively. The connection relationship between the electrode 18 and the N-type semiconductor layer 142). The upper surface of the first electrode 16 and the second electrode 18 are at the same horizontal position and may be metal electrodes, but not limited thereto. In addition, the light-emitting element 1 further includes a first connecting wire 20, a second connecting wire 22, and an energy conversion layer 4. The first connecting wire 20 and the second connecting wire 22 are disposed on the transparent substrate 2. The first connecting wire 20 and the second connecting wire 22 may be, for example, metal connecting wires or other conductive patterns, but not limited thereto. The first electrode 16 and the second electrode 18 are respectively electrically connected to the first connecting wire 20 and the second connecting wire 22, and the connection manner can be by wire bonding or welding, but not limited thereto. The energy conversion layer 4 is disposed on the transparent substrate 12 and can cover the LED array 14 . Further, the energy conversion layer 4 can be further disposed and covered the second main surface 21B of the transparent substrate 2.

另外,為了增加光線從透明基板2離開之出光量並使出光的分布均勻,透明基板2之第一主表面21A與第二主表面21B可選擇性地分別具有一非平面結構12M。非平面結構12M可為各式凸出或凹陷的幾何結構,例如金字塔、圓錐體、半球體或三角柱等,且非平面結構12M的排列可為規則性排列或隨機性排列。再者,第一主表面21A以及第二主表面21B上可選擇性地設置有一類鑽碳(diamond-like carbon,DLC)膜25,用以增加導熱及散熱效果。 In addition, in order to increase the amount of light emitted from the transparent substrate 2 and to distribute the light distribution uniformly, the first main surface 21A and the second main surface 21B of the transparent substrate 2 may selectively have a non-planar structure 12M, respectively. The non-planar structure 12M may be a variety of convex or concave geometric structures, such as pyramids, cones, hemispheres, or triangular columns, and the arrangement of the non-planar structures 12M may be a regular arrangement or a random arrangement. Furthermore, a first diamond-like carbon (DLC) film 25 is selectively disposed on the first main surface 21A and the second main surface 21B for increasing heat conduction and heat dissipation.

請參考第4B圖。第4B圖繪示了本發明之另一較佳實施例之發光元件的剖面示意圖。與第4A圖之實施例相較,在本實施例之發光元件1中,第一電極16與第二電極18係與一第一晶片接合層28A設置於發光二極體晶片14之同一表面,並以覆晶方式(flip chip)分別與第一連接導線20與第二連接導線22電性連接。其中,第一連接導線20與第二連接導線22可分別延伸至第一電極16與第二電極18的下方,且第一電極16與第二電極18可利用一第二晶片接合層28B分別與第一連接導線20與第二連接導線22電性連接。第二晶片接合層28B可為導電凸塊(conductive bump)例如金凸塊(gold bump)或錫鉛凸塊(solder bump)、導電膠(conductive glue)例如銀膠,或共晶層(eutectic layer)例如金錫(Au-Sn)合金共晶層或銦鉍錫合金(In-Bi-Sn alloy)共晶層,但不以此為限。在使用第二晶片接合層28B的狀況下,發光二極體晶片14之下方之第一晶片接合層28A例如透明膠可省略,或是由能量轉換層4加以取代。 Please refer to Figure 4B. FIG. 4B is a cross-sectional view showing a light emitting device according to another preferred embodiment of the present invention. In the light-emitting element 1 of the present embodiment, the first electrode 16 and the second electrode 18 are disposed on the same surface of the LED array 14 as the first wafer bonding layer 28A. And electrically connected to the first connecting wire 20 and the second connecting wire 22 respectively by a flip chip. The first connecting wire 20 and the second connecting wire 22 may extend below the first electrode 16 and the second electrode 18, respectively, and the first electrode 16 and the second electrode 18 may be respectively connected by a second wafer bonding layer 28B. The first connecting wire 20 is electrically connected to the second connecting wire 22 . The second wafer bonding layer 28B may be a conductive bump such as a gold bump or a solder bump, a conductive glue such as a silver paste, or a eutectic layer. For example, a gold-tin (Au-Sn) alloy eutectic layer or an indium-bismuth-tin alloy (In-Bi-Sn alloy) eutectic layer, but not limited thereto. In the case where the second wafer bonding layer 28B is used, the first wafer bonding layer 28A under the LED array 14 such as a transparent paste may be omitted or replaced by the energy conversion layer 4.

請參考第5圖,第5圖繪示了本發明之另一較佳實施例之發光元件的立體示意圖。如第5圖所示,本發明之發光元件310包括透明基板2、至少一發光二極體晶片3、一第一連接電極311A、一第二連接電極311B與至少一能量轉換層4。其中發光二極體晶片3係設置於透明基板2之承載面210上,而形成發光之一第一主表面21A。在此實施例中,發光二極體晶片3之一出光角度係大於180度,且發光二極體晶片3所發出之至少部分光線會射入透明基板2,而射入光線至少部分會從對應第一主表面21A之一第二主表面21B出光,部分從透明基板2其他表面出光,進而達到六面發光的發光效果。第一連接電極311A以及第二連接電極311B係分別設置於透明基板2上兩端或同側(圖未示),並分別為透明基板2上之一第一連接導線與一第二連接導線所延伸的元件對外電極,故第一連接電極311A與第二連接電極311B係分別與發光二極體晶片3電性連結。能量轉換層4係至少覆蓋發光二極體 晶片3並暴露至少部分第一連接電極311A與第二連接電極311B,其中能量轉換層4係至少部分吸收發光二極體晶片3及/或透明基板2所發出之光線,並轉換成另一波長範圍之光線,然後與未被吸收之光線混光,增加發光元件310的發光波長範圍與發光效果。由於本實施例之發光元件310具有分別設置於透明基板2上相對兩端之第一連接電極311A與第二連接電極311B,故發光元件310可獨自完成製作後再與適合之承載座進行結合,因此可達到提升整體製造良率、簡化結構以及增加所配合之承載座設計變化等效果。 Please refer to FIG. 5. FIG. 5 is a perspective view of a light-emitting element according to another preferred embodiment of the present invention. As shown in FIG. 5, the light-emitting element 310 of the present invention comprises a transparent substrate 2, at least one light-emitting diode chip 3, a first connection electrode 311A, a second connection electrode 311B and at least one energy conversion layer 4. The light-emitting diode chip 3 is disposed on the bearing surface 210 of the transparent substrate 2 to form one of the first main surfaces 21A. In this embodiment, one of the light-emitting diode chips 3 has a light-emitting angle greater than 180 degrees, and at least part of the light emitted by the light-emitting diode chip 3 is incident on the transparent substrate 2, and the incident light is at least partially corresponding. The second main surface 21B of one of the first main surfaces 21A emits light, and partially emits light from other surfaces of the transparent substrate 2, thereby achieving a luminous effect of six-sided illumination. The first connecting electrode 311A and the second connecting electrode 311B are respectively disposed on the two ends or the same side (not shown) of the transparent substrate 2, and are respectively a first connecting wire and a second connecting wire on the transparent substrate 2. Since the extended element is the outer electrode, the first connection electrode 311A and the second connection electrode 311B are electrically connected to the light-emitting diode wafer 3, respectively. The energy conversion layer 4 is at least covered with the light emitting diode The wafer 3 exposes at least a portion of the first connection electrode 311A and the second connection electrode 311B, wherein the energy conversion layer 4 at least partially absorbs the light emitted by the LED chip 3 and/or the transparent substrate 2 and converts it into another wavelength. The light of the range is then mixed with the unabsorbed light to increase the range of illumination wavelength and the illumination effect of the light-emitting element 310. Since the light-emitting element 310 of the present embodiment has the first connection electrode 311A and the second connection electrode 311B respectively disposed at opposite ends of the transparent substrate 2, the light-emitting element 310 can be fabricated by itself and then combined with a suitable carrier. Therefore, it is possible to improve the overall manufacturing yield, simplify the structure, and increase the design change of the mated seat.

請參考第6A圖,本發明之一實施例係使用前述發光元件之發光裝置11,其中發光裝置11可更包括一承載座5,使發光元件之透明基板2可以立設於其上並耦接於此承載座5,且透明基板2與承載座5之間具有一第一夾角θ1,該第一夾角θ1角度可為固設或根據發光裝置光形需要調動,其中較佳實施例的第一夾角θ1角度範圍係介於30度至150度之間。 Referring to FIG. 6A, an embodiment of the present invention uses a light-emitting device 11 of the foregoing light-emitting element, wherein the light-emitting device 11 further includes a carrier 5 on which the transparent substrate 2 of the light-emitting element can be erected and coupled. There is a first angle θ1 between the transparent substrate 2 and the carrier 5, and the angle of the first angle θ1 can be fixed or mobilized according to the light shape of the light-emitting device, wherein the first embodiment of the preferred embodiment The angle θ1 angle range is between 30 degrees and 150 degrees.

請參考第6B圖,本發明之發光裝置11的承載座5還可更包括一電路基板6與外部電源耦接,並電性耦接於透明基板2上的第一連接導線以及第二連接導線(圖未示),而與發光二極體晶片3電性連接,使外部電源透過電路基板供應發光二極體晶片3發光所需電源。若無設置此電路基板6,發光二極體晶片3亦可直接透過第一連接導線以及第二連接導線(圖未示)而電性連接於承載座5,使外部電源可經由承載座5對該發光二極體晶片3供電。 Referring to FIG. 6B, the carrier 5 of the illuminating device 11 of the present invention may further include a circuit substrate 6 coupled to an external power source, and electrically coupled to the first connecting wire and the second connecting wire on the transparent substrate 2. (not shown), and electrically connected to the light-emitting diode chip 3, the external power source supplies the power source required for the light-emitting diode chip 3 to emit light through the circuit substrate. If the circuit board 6 is not provided, the LED chip 3 can be directly connected to the carrier 5 through the first connecting wire and the second connecting wire (not shown), so that the external power source can be connected via the carrier 5 The light emitting diode chip 3 is powered.

請參考第6C圖,本發明之發光裝置11還可包括一反射鏡8設置於第二主表面21B上,此反射鏡8可反射該發光二極體晶片3所發出至少部分穿透該透明基板2之該光線,而使該光線至少部分改由該第一主表面21A射出。此反射鏡8可包括至少一金屬層或一布拉格反射鏡(Bragg reflector), 但不以此為限。其中,布拉格反射鏡可由多層具有不同折射率的介電薄膜所堆疊而構成,或是由多層具有不同折射率的介電薄膜與多層金屬氧化物所堆疊而構成。 Referring to FIG. 6C, the illuminating device 11 of the present invention may further include a mirror 8 disposed on the second main surface 21B, the mirror 8 reflecting the at least partial penetration of the illuminating diode 3 through the transparent substrate. The light of 2 causes the light to be at least partially emitted by the first major surface 21A. The mirror 8 may include at least one metal layer or a Bragg reflector. But not limited to this. The Bragg mirror may be formed by stacking a plurality of dielectric films having different refractive indices, or by stacking a plurality of dielectric films having different refractive indices and a plurality of metal oxides.

請參考第6D圖,本發明之發光裝置11的透明基板2還可包括一類鑽碳(diamond-like carbon,DLC)膜9,其中該類鑽碳膜9係設置於透明基板2之承載面210及/或第二主表面21B上,以增加導熱及散熱效果。 Referring to FIG. 6D, the transparent substrate 2 of the light-emitting device 11 of the present invention may further include a diamond-like carbon (DLC) film 9 disposed on the bearing surface 210 of the transparent substrate 2. And / or the second main surface 21B to increase heat conduction and heat dissipation.

請參考第7A圖。第7A圖繪示了本發明之一較佳實施例之發光裝置示意圖。如第7A圖所示,本實施例之發光裝置10包括一如先前實施例所述之發光元件與一承載座26,其中該發光元件包括一透明基板2與至少一發光二極體晶片14,且發光元件係嵌入該承載座26內,透過連接導線20、22分別與該承載座之電極30、32電性連接,使一電源可透過該電極30、32提供驅動電壓V+,V-以驅動該發光二極體晶片14發出光線L。發光二極體晶片14包括一第一電極16與一第二電極18係利用打線方式(wire bonding)與第一連接導線20與第二連接導線22電性連接,但不以此為限。另外發光二極體晶片14所發出光線L之出光角係大於180度或具有多個發光面,使得該發光元件的出光方向包括從第一主表面21A及第二主表面21B出光,且部分光線亦會由發光二極體晶片14及/或透明基板2的四個側壁所射出,使發光二極體晶片10具有六面發光或全方向出光特性。 Please refer to Figure 7A. FIG. 7A is a schematic view of a light emitting device according to a preferred embodiment of the present invention. As shown in FIG. 7A, the light-emitting device 10 of the present embodiment includes a light-emitting element and a carrier 26 as described in the previous embodiments, wherein the light-emitting element includes a transparent substrate 2 and at least one light-emitting diode wafer 14. The light-emitting elements are embedded in the carrier 26, and are electrically connected to the electrodes 30 and 32 of the carrier through the connecting wires 20 and 22 respectively, so that a power source can drive the driving voltages V+, V- through the electrodes 30 and 32 to drive. The light emitting diode chip 14 emits light L. The light-emitting diode chip 14 includes a first electrode 16 and a second electrode 18 electrically connected to the first connecting wire 20 and the second connecting wire 22 by wire bonding, but is not limited thereto. In addition, the light beam L emitted by the LED chip 14 has an exit angle greater than 180 degrees or has a plurality of light emitting surfaces, so that the light emitting direction of the light emitting element includes light from the first main surface 21A and the second main surface 21B, and part of the light is emitted. It is also emitted from the four side walls of the light-emitting diode wafer 14 and/or the transparent substrate 2, so that the light-emitting diode wafer 10 has six-sided light emission or omnidirectional light-emitting characteristics.

發光元件可更包括一能量轉換層4設置於發光二極體晶片14、第一主表面21A或第二主表面21B上。其中能量轉換層4可轉換至少部分發光二極體晶片14所發出之光線為另一波長範圍的光,使發光二極體晶片10發出特定光色或波長範圍較大的光線,例如發光二極體晶片14產生的部分藍光在照射到能量轉換層4後可轉換成為黃光,而發光二極體晶片10即可發出由 藍光與黃光混合成的白光。另外,透明基板2係可以非平行方式及/或平行方式直接或間接固設於承載座26上。例如,透明基板2之側壁係以垂直方式固設於承載座26上,或將透明基板2平放於承載座26上,但不以此為限。由於透明基板2係選擇具有良好的熱傳導特性的材料,發光二極體晶片14所產生的熱能可快速透過透明基板12傳遞至承載座26以進行散熱,故本發明之發光裝置可使用高功率之發光二極體晶片,但較佳實施例之發光裝置是在同樣功率條件下,改用多個較小功率的發光二極體晶片設置於基板12上,以充分利用基板12的熱傳導特性,如本實施例之發光二極體晶片之功率係可小於例如0.2瓦特,但不以此為限。 The light emitting element may further include an energy conversion layer 4 disposed on the light emitting diode wafer 14, the first main surface 21A or the second main surface 21B. The energy conversion layer 4 can convert the light emitted by at least part of the LEDs 14 into light of another wavelength range, so that the LEDs 10 emit light of a specific light color or a wide wavelength range, such as a light emitting diode. Part of the blue light generated by the bulk wafer 14 can be converted into yellow light after being irradiated to the energy conversion layer 4, and the light emitting diode wafer 10 can be emitted. White light mixed with blue light and yellow light. In addition, the transparent substrate 2 can be directly or indirectly fixed to the carrier 26 in a non-parallel manner and/or in a parallel manner. For example, the side wall of the transparent substrate 2 is fixed on the carrier 26 in a vertical manner, or the transparent substrate 2 is placed on the carrier 26, but not limited thereto. Since the transparent substrate 2 selects a material having good heat conduction characteristics, the heat energy generated by the LED chip 14 can be quickly transmitted to the carrier 26 through the transparent substrate 12 for heat dissipation, so that the light-emitting device of the present invention can use high power. The light-emitting diode chip, but the light-emitting device of the preferred embodiment is disposed on the substrate 12 under the same power condition, and a plurality of smaller-power LED chips are used to fully utilize the heat conduction characteristics of the substrate 12, such as The power of the LED chip of this embodiment may be less than, for example, 0.2 watts, but is not limited thereto.

請參考第7B圖。第7B圖繪示了本發明之另一較佳實施例之發光裝置的外觀示意圖。與第7A圖相較,發光裝置10’包括複數個發光二極體晶片14,且至少部份發光二極體晶片14以串聯方式彼此電性連接。其中,各發光二極體晶片14分別包括第一電極16與一第二電極18,串聯頭端之一個發光二極體晶片14的第一電極16與第一連接導線20電性連接,而尾端之另一個發光二極體晶片14的第二電極18與第二連接導線22電性連接,但不以此為限,發光二極體晶片14亦可利用並聯或串並聯方式電性連接。本實施例之發光二極體晶片14可以選自發出同一色光的發光二極體晶片,例如藍光發光二極體晶片,或根據應用需求使用組合不同色光之發光二極體晶片。在此狀況下搭配能量轉換層4的作法更可增加發光裝置10’發出各種光色的彈性。 Please refer to Figure 7B. FIG. 7B is a schematic diagram showing the appearance of a light-emitting device according to another preferred embodiment of the present invention. In contrast to Fig. 7A, the light emitting device 10' includes a plurality of light emitting diode chips 14, and at least a portion of the light emitting diode chips 14 are electrically connected to each other in series. Each of the LED chips 14 includes a first electrode 16 and a second electrode 18, and the first electrode 16 of the LED chip 14 at the head end of the series is electrically connected to the first connecting wire 20, and the tail The second electrode 18 of the other LED chip 14 is electrically connected to the second connecting wire 22, but not limited thereto. The LED chip 14 can also be electrically connected in parallel or in series and parallel. The LED array 14 of the present embodiment may be selected from a light emitting diode wafer emitting the same color light, such as a blue light emitting diode wafer, or a light emitting diode chip combining different color lights according to application requirements. The use of the energy conversion layer 4 in this case further increases the elasticity of the various light colors emitted by the light-emitting device 10'.

請參考第8圖。第8圖繪示了本發明之另一較佳實施例之發光裝置的外觀示意圖。與第7圖相較,本實施例之發光裝置50更包括一支架51,用以連結發光元件與承載座26,其中發光元件的透明基板2係藉由一元件接合層52固設於支架51之一側,而支架51之另一側可嵌設於承載座26上。另外支架51為可彈性調整角度,使發光二極體晶片10與承載座26之夾角介 於30度至150度之間。支架51的材質可包括複合式金屬材料、銅導線、電線或其他適合的材料。 Please refer to Figure 8. FIG. 8 is a schematic view showing the appearance of a light-emitting device according to another preferred embodiment of the present invention. The light-emitting device 50 of the present embodiment further includes a bracket 51 for connecting the light-emitting element and the carrier 26, wherein the transparent substrate 2 of the light-emitting component is fixed to the bracket 51 by a component bonding layer 52. One side, and the other side of the bracket 51 can be embedded on the carrier 26. In addition, the bracket 51 is elastically adjustable to make the angle between the LED wafer 10 and the carrier 26 Between 30 degrees and 150 degrees. The material of the bracket 51 may include a composite metal material, a copper wire, a wire, or other suitable material.

請參考第9A圖、第9B圖與第9C圖,當本發明中的透明基板2設置於承載座5之上時,較佳實施例之一係可透過插接或是黏接的方式來達成兩者的接合。 Referring to FIG. 9A, FIG. 9B and FIG. 9C, when the transparent substrate 2 of the present invention is disposed on the carrier 5, one of the preferred embodiments can be achieved by plugging or bonding. The joint of the two.

如第9A圖所示,當透明基板2佈置於承載座5之上時,其係插接於承載座5的單孔式插槽61,而使發光二極體元件透過連接導線與此插槽61電性耦接。此時透明基板2上的發光二極體晶片(圖未示)為了要與承載座5的電源供應相耦接,因此電路圖案或連接導線集中至透明基板2邊緣並整合為具有複數個導電觸片的金手指結構或如連接電極311A和311B,也就是電性連接埠。而插槽61則可讓透明基板2插入,使得發光二極體晶片(圖未示)在獲得承載座5供電的同時,透明基板2也被固設於承載座5的插槽61。 As shown in FIG. 9A, when the transparent substrate 2 is disposed on the carrier 5, it is inserted into the single-hole slot 61 of the carrier 5, and the LED component is transmitted through the connecting wire and the slot. 61 electrical coupling. At this time, the light-emitting diode chip (not shown) on the transparent substrate 2 is coupled to the power supply of the carrier 5, so that the circuit pattern or the connecting wire is concentrated to the edge of the transparent substrate 2 and integrated into a plurality of conductive contacts. The gold finger structure of the sheet or the connection electrodes 311A and 311B, that is, the electrical connection port. The slot 61 allows the transparent substrate 2 to be inserted, so that the light-emitting diode chip (not shown) is also provided with the power supply of the carrier 5, and the transparent substrate 2 is also fixed to the slot 61 of the carrier 5.

接著,請參考第9B圖,其係為透過插接透明基板2於承載座5上多孔式插槽之結構示意圖。此時透明基板2具有至少一雙插腳結構,其中一個插腳為元件正極,另一個則為元件負極,兩處皆為具有導電觸片作為連接埠。而對應地,在承載座5則具有至少兩個與插腳插入面尺寸相符的插槽61,使得透明基板2可以與承載座5順利接合,並讓發光二極體晶片獲得供電。 Next, please refer to FIG. 9B , which is a schematic structural view of the porous slot on the carrier 5 through the transparent substrate 2 . At this time, the transparent substrate 2 has at least one double pin structure, one of which is a positive electrode of the element, and the other is a negative electrode of the element, and both have a conductive contact as a connection port. Correspondingly, the carrier 5 has at least two slots 61 corresponding to the size of the pin insertion surface, so that the transparent substrate 2 can be smoothly engaged with the carrier 5 and the light-emitting diode wafer can be powered.

請參考第9C圖,其元件接合層係以黏接的方式將透明基板2與承載座5接合。在黏接的過程中,可以透過金、錫、銦、鉍、銀等金屬做焊接輔助而接合,或是使用具導電性的矽膠或是環氧樹脂輔助固設透明基板2,使發光元件之導電圖案或連接導線藉此元件接合層與承載座上之電極電性連 接。 Referring to FIG. 9C, the component bonding layer bonds the transparent substrate 2 to the carrier 5 in an adhesive manner. In the process of bonding, it can be joined by soldering with gold, tin, indium, antimony, silver, etc., or by using a conductive silicone or epoxy resin to fix the transparent substrate 2, so that the light-emitting element is The conductive pattern or the connecting wire is electrically connected to the electrode on the carrier by the component bonding layer Pick up.

請參考第10A圖與第10B圖,本實施例之發光裝置11主要組成同先前實施例所述,其中承載座5為一金屬基板如可彎折之複合式含鋁材料、銅導線或電線構成。承載座5的表面或是側邊具有至少一支架62,該支架62為與承載座5分離或一體化之機構件。發光元件係可透過黏接的方式與支架62相耦接,也就是藉由元件接合層63將透明基板2固設於承載座5,並與承載座5無支架的部分的表面維持具有第一夾角θ1,且承載座5無支架的部分的表面亦可設置發光二極體晶片提昇發光裝置11之發光效果;另外,發光元件亦可透過插接(圖未示)的方式與支架62相連接,也就是藉由連接器結合元件與支架及/或支架與承載座而將透明基板2固設於承載座5。由於承載座5與支架62係可彎折,因此增加了在應用時的靈活性,同時因可使用複數個發光元件,故亦可透過不同光色之發光元件組合,使發光裝置11具有色彩變化性以滿足不同需求。 Referring to FIG. 10A and FIG. 10B , the main assembly of the illuminating device 11 of the present embodiment is the same as that of the previous embodiment, wherein the carrier 5 is a metal substrate such as a bendable composite aluminum-containing material, copper wire or wire. . The surface or side of the carrier 5 has at least one bracket 62 which is a mechanical member that is separate or integrated with the carrier 5. The light-emitting component is coupled to the bracket 62 by means of bonding, that is, the transparent substrate 2 is fixed to the carrier 5 by the component bonding layer 63, and is maintained first with the surface of the portion of the carrier 5 without the bracket. The angle θ1 and the surface of the portion of the carrier 5 without the bracket may also be provided with the light emitting effect of the light emitting diode wafer to enhance the light emitting device 11; in addition, the light emitting element may also be connected to the bracket 62 by means of plugging (not shown). That is, the transparent substrate 2 is fixed to the carrier 5 by the connector bonding component and the bracket and/or the bracket and the carrier. Since the carrier 5 and the bracket 62 are bendable, the flexibility in application is increased, and since a plurality of light-emitting elements can be used, the light-emitting device 11 can be colored by the combination of light-emitting elements of different light colors. Sex to meet different needs.

請參考第11圖。如第11圖所示,本實施例之發光裝置包括至少一發光元件1及一承載座5,其中該承載座5包括至少一支架62以及至少一電路圖案P。發光元件1之主要組成如先前實施例所述,並以透明基板之一端與支架62相耦接,以避免或減少支架62對發光元件1出光的遮蔽效果。承載座5係複合式鋁質金屬基板、銅導線或電線構成,支架62係自承載座5之一部分加以切割彎折一角度(如上述第10A圖與第10B圖之第一夾角θ1)而成。電路圖案P係設置於承載座5上,並具有至少1組電性端點與一電源電性連接,且有一部分延伸至支架62與發光元件1電性連接,使該發光元件1可透過承載座5之電路圖案P與電源電性連接。另外承載座5可更包括至少一孔洞H或至少一缺口G,使固設件如螺絲、釘子或插銷等等可透過該孔洞H或缺口G將承載座5與其他組件依發光裝置應用情形作進一步構裝或安 裝,同時孔洞H或缺口G亦增加承載座5之散熱面積,提昇發光裝置之散熱效果。 Please refer to Figure 11. As shown in FIG. 11 , the light-emitting device of the present embodiment includes at least one light-emitting element 1 and a carrier 5 , wherein the carrier 5 includes at least one bracket 62 and at least one circuit pattern P. The main component of the light-emitting element 1 is as described in the previous embodiment, and is coupled to the bracket 62 at one end of the transparent substrate to avoid or reduce the shielding effect of the bracket 62 on the light emitted from the light-emitting element 1. The carrier 5 is composed of a composite aluminum metal substrate, a copper wire or a wire, and the bracket 62 is formed by cutting and bending one portion of the carrier 5 (such as the first angle θ1 of the above 10A and 10B). . The circuit pattern P is disposed on the carrier 5 and has at least one set of electrical terminals electrically connected to a power source, and a portion extending to the bracket 62 to be electrically connected to the light emitting element 1 to enable the light emitting element 1 to be permeable. The circuit pattern P of the socket 5 is electrically connected to the power source. In addition, the carrier 5 can further include at least one hole H or at least one notch G, so that a fixing member such as a screw, a nail or a pin can pass through the hole H or the notch G to make the carrier 5 and other components according to the application of the illuminating device. Further construction or safety At the same time, the hole H or the gap G also increases the heat dissipation area of the carrier 5, thereby improving the heat dissipation effect of the light-emitting device.

請參考第12圖。第12圖繪示了本發明之另一較佳實施例之發光裝置之裝置基座的立體示意圖。如第12圖所示,本實施例之裝置基座322包括一承載座5以及至少一支架62,與第11圖之實施例相較,本實施例之支架62更包括至少一條狀部342與一缺口330,其中電極30、32係分別設置於缺口330的兩側,條狀部342至少構成該缺口330的一邊牆。一發光元件係對應該缺口330與該支架62耦接,且該發光元件的連接導線係與電極30、32電性連接,使該發光元件可透過支架62及承載座上的電路圖案與一電源電性耦接而被驅動。其中缺口330尺寸需不小於發光元件之一主要出光面,使發光元件面對支架62方向的出光不會被支架62遮蔽。支架62與承載座5之間的連接處可為一可活動設計,以使支架62與承載座5之間夾角可視需要進行調整。 Please refer to Figure 12. Figure 12 is a perspective view showing the base of the device of the light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 12, the device base 322 of the present embodiment includes a carrier 5 and at least one bracket 62. Compared with the embodiment of FIG. 11, the bracket 62 of the embodiment further includes at least one strip 342 and A notch 330, wherein the electrodes 30, 32 are respectively disposed on both sides of the notch 330, and the strip portion 342 constitutes at least one side wall of the notch 330. A light-emitting component is coupled to the bracket 62 corresponding to the notch 330, and the connecting wire of the light-emitting component is electrically connected to the electrodes 30 and 32, so that the light-emitting component can pass through the bracket 62 and the circuit pattern on the carrier and a power source. Electrically coupled to be driven. The size of the notch 330 needs to be not less than one of the main light-emitting surfaces of the light-emitting element, so that the light emitted from the light-emitting element in the direction of the bracket 62 is not blocked by the bracket 62. The connection between the bracket 62 and the carrier 5 can be a movable design so that the angle between the bracket 62 and the carrier 5 can be adjusted as needed.

請參考第12圖與第13圖。第13圖繪示了本發明之另一較佳實施例之發光裝置的立體示意圖。與第12圖之實施例相較,第13圖所示之發光裝置302更包括至少一有複數個缺口330的支架62,其中該複數個缺口330係分別設置於支架62的對應兩邊,使條狀部342至少同時構成該複數個缺口330的一邊牆。複數個發光元件310係與該複數個缺口330對應設置,且各發光元件310之電路圖案或連接電極(圖未示)係分別與電極30以及電極32對應設置並電性連結。本實施例之發光裝置302更進一步可包括複數個支架62,各設置有發光元件310之支架62與承載座5之間夾角可視需要各自進行調整,換句話說,至少部分之支架62與承載座5之間的夾角可彼此相異以達到所需之發光效果,但並不以此為限。另外亦可在相同支架或不同支架設置不同發光波長範圍之發光元件組合,使發光裝置之色彩效果更豐富。 Please refer to Figure 12 and Figure 13. Figure 13 is a perspective view showing a light-emitting device according to another preferred embodiment of the present invention. The light-emitting device 302 shown in FIG. 13 further includes at least one bracket 62 having a plurality of notches 330, wherein the plurality of notches 330 are respectively disposed on corresponding sides of the bracket 62 to make strips. The portion 342 at least simultaneously forms a side wall of the plurality of notches 330. A plurality of light-emitting elements 310 are disposed corresponding to the plurality of notches 330, and a circuit pattern or a connection electrode (not shown) of each of the light-emitting elements 310 is electrically connected to the electrodes 30 and 32, respectively. The illuminating device 302 of the present embodiment may further include a plurality of brackets 62. The angle between the brackets 62 each provided with the illuminating elements 310 and the carrier 5 may be adjusted separately, in other words, at least a portion of the bracket 62 and the carrier. The angles between 5 can be different from each other to achieve the desired illuminating effect, but are not limited thereto. In addition, the combination of the light-emitting elements of different illumination wavelength ranges can be set in the same bracket or different brackets, so that the color effect of the illumination device is more abundant.

為了提高亮度與改善發光效果,本發明之另一實施例的發光裝置係將複數個透明基板所形成的發光元件同時佈置於諸如前述實施例之承載座或其他承載機構之上,此時係可採對稱或非對稱排列的形式做佈置,較佳的對稱佈置方式也就是將多個透明基板所形成的發光元件以點對稱或線對稱的形式設置於承載機構之上。請參考第14A圖、第14B圖、第14C圖與第14D圖,各實施例之發光裝置係在各種不同形狀的承載機構60上設置複數個發光元件,並且以點對稱或線對稱的形式讓整體發光裝置11的出光能夠均勻(發光二極體晶片省略示意),此些發光裝置11的出光效果還可藉由改變上述之第一夾角的大小而再做進一步的調整與改善。如第14A圖所示,發光元件之間係以點對稱方式夾90度角,此時從發光裝置四面的任一面往發光裝置看均正對至少2個發光元件;第14B圖所示之發光裝置的發光元件之間夾角係小於90度;第14D圖所示之發光裝置的發光元件之間夾角係大於90度。另一實施例則以非對稱佈置方式將多個發光元件至少部分集中或分散設置,以達成發光裝置於不同應用時的光形需要(圖未示)。 In order to improve the brightness and improve the illuminating effect, the illuminating device of another embodiment of the present invention simultaneously arranges the illuminating elements formed by the plurality of transparent substrates on the carrier or other supporting mechanism such as the foregoing embodiment. Arranged in a symmetrical or asymmetrical arrangement, the preferred symmetrical arrangement is to arrange the light-emitting elements formed by the plurality of transparent substrates on the support mechanism in a point symmetrical or line symmetrical manner. Referring to FIG. 14A, FIG. 14B, FIG. 14C and FIG. 14D, the illuminating device of each embodiment is provided with a plurality of illuminating elements on various different shapes of the supporting mechanism 60, and is arranged in point symmetry or line symmetry. The light emitted from the overall light-emitting device 11 can be uniform (the light-emitting diode wafer is omitted), and the light-emitting effect of the light-emitting devices 11 can be further adjusted and improved by changing the size of the first angle. As shown in Fig. 14A, the light-emitting elements are angled at a 90-degree angle in a point-symmetric manner. At this time, at least two light-emitting elements are viewed from the light-emitting device on either side of the light-emitting device; the light-emitting device shown in Fig. 14B The angle between the light-emitting elements of the device is less than 90 degrees; the angle between the light-emitting elements of the light-emitting device shown in Fig. 14D is greater than 90 degrees. In another embodiment, the plurality of light emitting elements are at least partially concentrated or dispersed in an asymmetric arrangement to achieve a light shape requirement (not shown) of the light emitting device in different applications.

請參考第15圖。第15圖繪示了本發明之另一較佳實施例之發光裝置的剖面示意圖。如第15圖所示,發光裝置301包括發光元件310以及一支架321。支架321包括一缺口330,且發光元件310係與缺口330對應設置。其中,本實施例之支架321之下部亦可當作插腳或彎折成表面焊接所需接墊,用以固設或/及電性連結於其他所需之元件例如承載座。由於發光元件310之一出光面係設置於缺口330內,故不論支架321是否為透光材料,發光裝置301皆可保有六面發光的發光效果。 Please refer to Figure 15. Figure 15 is a cross-sectional view showing a light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 15, the light-emitting device 301 includes a light-emitting element 310 and a bracket 321. The bracket 321 includes a notch 330, and the light-emitting element 310 is disposed corresponding to the notch 330. The lower portion of the bracket 321 of the embodiment can also be used as a pin or bent into a pad for surface soldering for fixing or/and electrically connecting to other required components such as a carrier. Since one of the light-emitting elements 310 is disposed in the notch 330, the light-emitting device 301 can maintain the luminous effect of the six-sided illumination regardless of whether the holder 321 is a light-transmitting material.

請參考第16A圖,為本發明具體實施例之一的發光裝置,該發光裝置包括一長管形之燈殼7、至少一發光元件1以及其承載機構60,其中發 光元件1設置於承載機構60上並至少一部分位於長管形之燈殼7所形成之空間內。又請參考第16B圖,當兩個以上發光元件1設置於燈殼7之內時,此些發光元件1的第一主表面21A之間是以不互相平行的方式做排列。另外,發光元件1至少部分置於燈殼7所形成之空間內,且不緊貼燈殼7的內壁,較佳的實施例為發光元件1與燈殼7之間有一大於500微米(μm)的距離D;但亦可設計以灌膠方式形成燈殼7,並使該燈殼7至少部分包覆並直接接觸於該發光元件1。 Please refer to FIG. 16A, which is a light-emitting device according to one embodiment of the present invention. The light-emitting device includes a long tubular lamp housing 7, at least one light-emitting element 1 and a supporting mechanism 60 thereof. The light element 1 is disposed on the carrier mechanism 60 and at least partially located in the space formed by the long tubular lamp housing 7. Referring to FIG. 16B, when two or more light-emitting elements 1 are disposed in the lamp housing 7, the first main surfaces 21A of the light-emitting elements 1 are arranged in a manner that is not parallel to each other. In addition, the light-emitting element 1 is at least partially disposed in the space formed by the lamp housing 7 and does not abut against the inner wall of the lamp housing 7. In a preferred embodiment, the light-emitting element 1 and the lamp housing 7 are larger than 500 micrometers (μm). The distance D; however, it is also possible to form the lamp envelope 7 by means of potting, and to at least partially cover the lamp envelope 7 and directly contact the light-emitting element 1.

請參考第16C圖,本發明之另一具體實施例的發光裝置,其中該發光裝置的燈殼7具有至少一個罩面71,該罩面71可為印刷有廣告的版面或其他需要背光源之顯示裝置,再藉由本發明的發光元件1的第一主表面21A和第二主表面21B所提供的光照形成罩面71的背光,其中,發光元件1與罩面71之間形成之第二夾角的角度範圍係介於0度~45度(第二夾角於圖中係為0度,故未示)。為了確保透明基板以及多方向出光之發光二極體晶片所組合成的發光元件或發光板/發光片所產生的光能夠較均勻的穿透燈殼7,發光元件1至少部分置於燈殼7所形成之空間內,且基本上不緊貼燈殼7的內壁,較佳的實施例為發光元件1與燈殼7之間有一大於500微米的距離D;但另亦可設計以灌膠方式形成燈殼7,並使燈殼7至少部分包覆並直接接觸於透明基板2。 Referring to FIG. 16C, a light emitting device according to another embodiment of the present invention, wherein the lamp housing 7 of the light emitting device has at least one cover 71, which may be a printed surface or other backlight. The display device further forms a backlight of the cover 71 by the illumination provided by the first main surface 21A and the second main surface 21B of the light-emitting element 1 of the present invention, wherein the second angle formed between the light-emitting element 1 and the cover 71 The angular range is between 0 and 45 degrees (the second angle is 0 degrees in the figure, so it is not shown). In order to ensure that the light generated by the light-emitting element or the light-emitting plate/light-emitting sheet combined by the transparent substrate and the multi-directional light-emitting diode chip can penetrate the lamp housing 7 more uniformly, the light-emitting element 1 is at least partially placed in the lamp housing 7 In the space formed, and substantially not close to the inner wall of the lamp housing 7, a preferred embodiment has a distance D between the light-emitting element 1 and the lamp housing 7 of more than 500 micrometers; The lamp housing 7 is formed in a manner such that the lamp housing 7 is at least partially covered and directly in contact with the transparent substrate 2.

請參考第16D圖、第16E圖、第16F圖與第16G圖,為本發明之另一系列具體實施例,於此系列實施例中發光裝置係進一步包括一球形之燈殼7以及底座64。於第16D圖中,與先前實施例相較,本實施例之發光裝置更包括一球形之燈殼7一承載座5進一步設置於一底座64上,其中該底座64可為傳統球泡燈底座,該燈殼7可與底座64耦接包覆發光元件與承載座5,亦可燈殼7直接與承載座5耦接而包覆發光元件。底座64的形式可為平 台或是另有承載突部,如第16E圖所示。於第16F圖中,燈殼7之內側塗佈有能量轉換層4,可讓發光二極體晶片3所產生的光線至少有部分在離開燈殼7之前會被轉換成另一波長範圍的光。而於第16G圖中,則揭示了使用雙層之燈殼7與燈殼7’的設計,燈殼7與燈殼7’之間具有一空間S,利用燈殼7、燈殼7’以及兩者之間的空間S可使發光裝置在花紋和色彩上做進一步變化。 Please refer to FIG. 16D, FIG. 16E, FIG. 16F and FIG. 16G, which are another series of specific embodiments of the present invention. The light-emitting device further includes a spherical lamp housing 7 and a base 64. In the 16D, the light-emitting device of the present embodiment further includes a spherical lamp housing 7 and a carrier 5 further disposed on a base 64. The base 64 can be a conventional bulb base. The lamp housing 7 can be coupled to the base 64 to cover the light-emitting component and the carrier 5 , and the lamp housing 7 can be directly coupled to the carrier 5 to cover the light-emitting component. The base 64 can be in the form of a flat The table or another bearing protrusion, as shown in Figure 16E. In Fig. 16F, the inner side of the lamp envelope 7 is coated with an energy conversion layer 4, so that at least part of the light generated by the light-emitting diode wafer 3 is converted into light of another wavelength range before leaving the lamp envelope 7. . In Fig. 16G, the design of the double-layered lamp housing 7 and the lamp housing 7' is disclosed, and a space S is formed between the lamp housing 7 and the lamp housing 7', using the lamp housing 7, the lamp housing 7', and The space S between the two allows the illuminating device to make further changes in the pattern and color.

請參考第17圖與第18圖,第17圖繪示了本發明之另一較佳實施例之燈條的示意圖,第18圖繪示了本發明之另一較佳實施例之發光裝置的立體示意圖。如第17圖所示,本實施例之燈條323包括複數個缺口330。燈條323具有一延伸方向X,且缺口330係沿延伸方向X排列設置。複數個多方向出光之發光元件係對應燈條323之缺口330設置而形成一發光燈條,但並不以此為限。此外,燈條323可更包括複數個不同電性之電極30、電極32、一第一連外電極350A以及一第二連外電極350B。電極30與電極32係分別設置於各缺口330的兩側。第一連外電極350A以及第二連外電極350B係分別與各電極30與各電極32電性連接並設置於燈條323的兩側。如第18圖所示,發光裝置303可包括前述實施例之燈條323以及一裝置框架360。其中,設置有發光元件310之燈條323可視需要以垂直、水平或斜放的方式設置於裝置框架360中,燈條323可藉由位於兩側之第一連外電極350A以及第二連外電極350B透過裝置框架360與一電源電性連結,但並不以此為限。此外,發光裝置303亦可視需要搭配適合的光學膜例如擴散膜以調整裝置框架360中發光元件310所形成的發光效果。 Please refer to FIG. 17 and FIG. 18, FIG. 17 is a schematic diagram of a light bar according to another preferred embodiment of the present invention, and FIG. 18 is a view showing a light-emitting device according to another preferred embodiment of the present invention. Stereoscopic view. As shown in FIG. 17, the light bar 323 of the present embodiment includes a plurality of notches 330. The light bar 323 has an extending direction X, and the notches 330 are arranged in the extending direction X. A plurality of multi-directional light-emitting elements are disposed corresponding to the notches 330 of the light bar 323 to form a light-emitting strip, but are not limited thereto. In addition, the light bar 323 may further include a plurality of electrodes 30 of different electrical properties, electrodes 32, a first outer electrode 350A, and a second outer electrode 350B. The electrode 30 and the electrode 32 are respectively disposed on both sides of each of the notches 330. The first outer electrode 350A and the second outer electrode 350B are electrically connected to the respective electrodes 30 and the electrodes 32 and disposed on both sides of the light bar 323. As shown in Fig. 18, the light-emitting device 303 may include the light bar 323 of the foregoing embodiment and a device frame 360. The light bar 323 provided with the light-emitting element 310 can be disposed in the device frame 360 in a vertical, horizontal or oblique manner as needed. The light bar 323 can be connected to the first outer electrode 350A and the second outer side on both sides. The electrode 350B is electrically connected to a power source through the device frame 360, but is not limited thereto. In addition, the light-emitting device 303 can also be equipped with a suitable optical film such as a diffusion film to adjust the light-emitting effect formed by the light-emitting elements 310 in the device frame 360.

請參考第19圖,第19圖繪示了本發明之另一較佳實施例之發光裝置的示意圖。如第19圖所示,發光裝置304包括複數個發光元件310以及一承載座324。承載座324包括複數個缺口330,缺口330係以一陣列方式排 列設置,且各發光元件310係與缺口330對應設置。本實施例之各發光元件310於缺口330的連接方式與上述實施例相似,故在此並不再贅述。值得說明的是,承載座324可更包括第一連外電極350A以及第二連外電極350B,用以與其他外部元件電性連結。此外,本實施例之發光裝置304可用於廣告看板或直下式背光模組,且承載座324較佳係具有透光性質,但並不以此為限。 Please refer to FIG. 19, which shows a schematic diagram of a light emitting device according to another preferred embodiment of the present invention. As shown in FIG. 19, the light-emitting device 304 includes a plurality of light-emitting elements 310 and a carrier 324. The carrier 324 includes a plurality of notches 330, and the notches 330 are arranged in an array. The columns are arranged, and each of the light-emitting elements 310 is disposed corresponding to the notch 330. The connection manner of each of the light-emitting elements 310 of the present embodiment in the notch 330 is similar to that of the above embodiment, and thus will not be described herein. It should be noted that the carrier 324 may further include a first external electrode 350A and a second external electrode 350B for electrically connecting with other external components. In addition, the illuminating device 304 of the present embodiment can be used for an advertising kanban or a direct type backlight module, and the carrier 324 preferably has a light transmitting property, but is not limited thereto.

綜上所述,本發明之發光元件使用透明基板以及出光角大於180度之發光二極體晶片,因此具有六面發光或全方向發光的效果,且可提升發光效率並改善習知使用發光二極體之發光元件光型不佳的問題。此外,透明基板係選擇具有良好的熱傳導特性的材料,藉此發光二極體晶片所產生的熱能可快速透過透明基板進行散熱。 In summary, the light-emitting element of the present invention uses a transparent substrate and a light-emitting diode wafer having an exit angle of more than 180 degrees, thereby having the effect of six-sided illumination or omnidirectional illumination, and improving luminous efficiency and improving conventional illumination. The problem of poor light quality of the light-emitting elements of the polar body. In addition, the transparent substrate selects a material having good heat conduction characteristics, whereby the thermal energy generated by the light-emitting diode wafer can be quickly dissipated through the transparent substrate.

此外,本發明所揭示之發光元件的結構,藉由將發光二極體晶片設置於透明基板上而形成的發光元件或發光板/發光片可獲致有效且充分的靈活運用;並且發光元件的兩個主要面方向皆可出光,因此能在最少的供電之下獲得最大的出光效率,並有均勻之出光效果,而無論是在應用於燈泡、燈管、廣告看板等領域,皆可展現其發光效果佳、低耗電量以及出光均勻等優點,實為一具經濟和實用價值的發光元件。 In addition, in the structure of the light-emitting element disclosed in the present invention, the light-emitting element or the light-emitting board/light-emitting sheet formed by disposing the light-emitting diode wafer on the transparent substrate can be effectively and fully utilized; and The main surface direction can be lighted out, so that the maximum light output efficiency can be obtained under the minimum power supply, and the light output effect is uniform, and the light can be exhibited in the fields of bulbs, lamps, billboards, and the like. The effect of good effect, low power consumption and uniform light output is an economical and practical value of light-emitting components.

2‧‧‧透明基板 2‧‧‧Transparent substrate

4‧‧‧能量轉換層 4‧‧‧ energy conversion layer

10‧‧‧發光裝置 10‧‧‧Lighting device

14‧‧‧發光二極體晶片 14‧‧‧Light Emitting Diode Wafer

16‧‧‧第一電極 16‧‧‧First electrode

18‧‧‧第二電極 18‧‧‧second electrode

20‧‧‧第一連接導線 20‧‧‧First connecting wire

21A‧‧‧第一主表面 21A‧‧‧ first major surface

21B‧‧‧第二主表面 21B‧‧‧Second major surface

22‧‧‧第二連接導線 22‧‧‧Second connecting wire

26‧‧‧承載座 26‧‧‧Hosting

30‧‧‧電極 30‧‧‧Electrode

32‧‧‧電極 32‧‧‧ electrodes

210‧‧‧承載面 210‧‧‧ bearing surface

L‧‧‧光線 L‧‧‧Light

V+‧‧‧驅動電壓 V+‧‧‧ drive voltage

V-‧‧‧驅動電壓 V-‧‧‧ drive voltage

Claims (30)

一種發光元件,包括:一透明基板,具有一承載面與一第二主表面彼此相對設置;以及複數個發光二極體晶片,至少部分之該等發光二極體晶片係設置於該承載面上,並與未設置該等發光二極體晶片之部分該承載面形成可發光之一第一主表面,其中各該發光二極體晶片包括一第一電極與一第二電極;其中該等發光二極體晶片中至少一個該發光二極體晶片之發光方向包括經過該透明基板並從該第二主表面出光。 A light-emitting element comprising: a transparent substrate having a bearing surface and a second main surface disposed opposite to each other; and a plurality of light-emitting diode chips, at least part of the light-emitting diode chips being disposed on the bearing surface And the portion of the carrier surface that is not provided with the light-emitting diode chip forms a first main surface that can emit light, wherein each of the light-emitting diode chips includes a first electrode and a second electrode; wherein the light-emitting The direction of illumination of at least one of the light emitting diode chips in the diode wafer includes passing through the transparent substrate and emitting light from the second major surface. 如請求項1所述之發光元件,更包括至少一能量轉換層,設置於該等發光二極體晶片、該第一主表面或該第二主表面上,該能量轉換層係至少部份吸收該等發光二極體晶片所發出之光線,並轉換為不同波長範圍之光線。 The light-emitting element of claim 1, further comprising at least one energy conversion layer disposed on the light-emitting diode wafer, the first main surface or the second main surface, the energy conversion layer being at least partially absorbed The light emitted by the light-emitting diode wafers is converted into light of different wavelength ranges. 如請求項2所述之發光元件,其中該能量轉換層係設置於該第一主表面與該第二主表面之上,且前述不同位置之該能量轉換層所含螢光粉比例為1比0.5至1比3。 The light-emitting element according to claim 2, wherein the energy conversion layer is disposed on the first main surface and the second main surface, and the ratio of the phosphor powder contained in the energy conversion layer at the different positions is 1 ratio 0.5 to 1 to 3. 如請求項1所述之發光元件,其中各該發光二極體晶片之功率小於0.2瓦特。 The light-emitting element of claim 1, wherein the power of each of the light-emitting diode chips is less than 0.2 watts. 如請求項1所述之發光元件,其中該透明基板之材質係選自包括氧化鋁(Al2O3)、含有氧化鋁的藍寶石、碳化矽(SiC)、玻璃、塑膠或橡膠所組成之群組其中之一者。 The light-emitting element according to claim 1, wherein the material of the transparent substrate is selected from the group consisting of alumina (Al 2 O 3 ), alumina-containing sapphire, tantalum carbide (SiC), glass, plastic or rubber. One of the groups. 如請求項1所述之發光元件,其中該第二主表面具有一非平面結構。 The illuminating element of claim 1, wherein the second major surface has a non-planar structure. 如請求項1所述之發光元件,更包括一類鑽碳膜,設置於該承載面或該第二主表面上。 The light-emitting element of claim 1, further comprising a diamond-like carbon film disposed on the bearing surface or the second major surface. 如請求項7所述之發光元件,更包括一光學膜,設置於該透明基板與該類鑽碳膜之間。 The illuminating element of claim 7, further comprising an optical film disposed between the transparent substrate and the diamond-like carbon film. 如請求項1所述之發光元件,其中至少一個該發光二極體晶片之出光角度係大於180度。 The light-emitting element according to claim 1, wherein at least one of the light-emitting diode chips has an exit angle of more than 180 degrees. 如請求項1所述之發光元件,其中該透明基板材質係藍寶石且厚度係大於或等於200微米。 The light-emitting element of claim 1, wherein the transparent substrate material is sapphire and the thickness is greater than or equal to 200 micrometers. 如請求項1所述之發光元件,其中該第一電極與該第二電極分別與位於該透明基板上之一第一連接導線以及一第二連接導線電性連接。 The illuminating device of claim 1, wherein the first electrode and the second electrode are electrically connected to a first connecting wire and a second connecting wire on the transparent substrate, respectively. 如請求項1所述之發光元件,其中該第一主表面與該第二主表面所發出光線之色溫差異等於或小於1500K。 The illuminating element of claim 1, wherein a difference in color temperature of light emitted by the first major surface and the second major surface is equal to or less than 1500K. 如請求項1所述之發光元件,其中該透明基板對波長範圍大於或等於420奈米,或小於或等於470奈米的光線,該基板之光穿透率大於或等於70%。 The light-emitting element of claim 1, wherein the transparent substrate has a light transmittance of greater than or equal to 70% for light having a wavelength range greater than or equal to 420 nm or less than or equal to 470 nm. 如請求項1所述之發光元件,其中各該發光二極體晶片均具有一發光面,且該第一主表面或該第二主表面之面積係為該些發光二極體晶片之該發光面之總面積5倍以上。 The illuminating device of claim 1, wherein each of the illuminating diode chips has a illuminating surface, and the area of the first main surface or the second main surface is the illuminating of the illuminating diode chips. The total area of the noodles is more than 5 times. 如請求項2所述之發光元件,其中該能量轉換層係設置於該發光二極體 晶片與該第二主表面之上,且前述不同位置之能量轉換層所含螢光粉比例為1比0.5至1比3。 The illuminating element of claim 2, wherein the energy conversion layer is disposed on the illuminating diode The ratio of the phosphor powder contained in the energy conversion layer at the different positions of the wafer and the second main surface is 1 to 0.5 to 1 to 3. 如請求項1所述之發光元件,更包括一反射鏡,設置於該第二主表面上。 The illuminating element of claim 1, further comprising a mirror disposed on the second major surface. 如請求項1所述之發光元件,其中至少部分之該等發光二極體晶片係設置於該第二主表面上,且該承載面與該第二主表面上的該等發光二極體晶片係對應交錯排列。 The illuminating element of claim 1, wherein at least a portion of the illuminating diode chips are disposed on the second main surface, and the carrying surface and the illuminating diode chips on the second main surface are Corresponding to staggered arrangement. 一種發光裝置,包括至少一如請求項1所述之發光元件,以及一承載座;其中該發光元件係設置於該承載座上。 A light-emitting device comprising at least one light-emitting element according to claim 1, and a carrier; wherein the light-emitting element is disposed on the carrier. 如請求項18所述之發光裝置,其中該發光元件係與該承載座間有一第一夾角,且該第一夾角的角度範圍包括30度至150度。 The illuminating device of claim 18, wherein the illuminating element has a first angle with the carrier, and the first included angle ranges from 30 degrees to 150 degrees. 如請求項18所述之發光裝置,更包括一支架與該承載座耦接,且該發光元件係固設於該支架上,並透過該支架與一電源電性耦接。 The illuminating device of claim 18, further comprising a bracket coupled to the carrier, wherein the illuminating component is fixed to the bracket and electrically coupled to a power source through the bracket. 如請求項20所述之發光裝置,其中該支架係可彎折,使該發光元件與該承載座間有該第一夾角。 The illuminating device of claim 20, wherein the bracket is bendable such that the first angle is between the illuminating element and the cradle. 如請求項18所述之發光裝置,更包括複數個該發光元件,且至少部分該些發光元件係以點對稱或線對稱方式設置於該承載座上。 The illuminating device of claim 18, further comprising a plurality of the illuminating elements, and at least some of the illuminating elements are disposed on the carrier in a point symmetrical or line symmetrical manner. 如請求項22所述之發光裝置,更包括複數個支架,且至少部分該些發光元件分別設置在該些支架。 The illuminating device of claim 22, further comprising a plurality of brackets, and at least some of the illuminating elements are respectively disposed on the brackets. 如請求項23所述之發光裝置,其中至少部分該些支架與該承載座之間的夾角角度相異。 The illuminating device of claim 23, wherein an angle of the angle between at least a portion of the brackets and the carrier is different. 如請求項20所述之發光裝置,其中該支架至少具有一缺口,且該發光元件係對應該缺口固設於該支架上。 The illuminating device of claim 20, wherein the bracket has at least one notch, and the illuminating member is fixed to the bracket corresponding to the notch. 如請求項20所述之發光裝置,其中該支架係與該承載座一體化。 The illuminating device of claim 20, wherein the bracket is integral with the carrier. 如請求項20所述之發光裝置,其中該支架的材質可選自包括複合式金屬材料、銅導線或電線。 The illuminating device of claim 20, wherein the material of the bracket is selected from the group consisting of a composite metal material, a copper wire or a wire. 如請求項18所述之發光裝置,該承載座包括至少一缺口或孔洞。 The light-emitting device of claim 18, wherein the carrier comprises at least one notch or hole. 如請求項18所述之發光裝置,更包括複數個該發光元件以及一支架,該支架係與該承載座耦接,其中該支架包括複數個缺口交錯設置,且至少部分該些發光元件係對應該些缺口固設於該支架上,並透過該支架與一電源電性耦接。 The illuminating device of claim 18, further comprising a plurality of the illuminating elements and a bracket, the bracket being coupled to the cradle, wherein the bracket comprises a plurality of notch staggered arrangements, and at least some of the illuminating elements are paired The gaps are fixed to the bracket and electrically coupled to a power source through the bracket. 一種發光裝置,包括至少一如請求項1所述之發光元件以及一支架;其中該發光元件係設置於該支架上,並透過該支架與一電源電性耦接。 A illuminating device comprising at least one illuminating element as claimed in claim 1 and a bracket; wherein the illuminating element is disposed on the bracket and electrically coupled to a power source through the bracket.
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TW102116429A TWI533468B (en) 2012-05-29 2013-05-08 Light emitting element and illumination device thereof
CN201310191958.9A CN103456869B (en) 2012-05-29 2013-05-22 Light-emitting device, light-emitting diode chip for forming multi-directional light emission and sapphire substrate thereof
CN2013202827664U CN203300693U (en) 2012-05-29 2013-05-22 Light emitting diode chip capable of emitting light in multiple directions and light emitting device thereof
CN201610696438.7A CN106252491A (en) 2012-05-29 2013-05-22 Light-emitting device
CN2013202827950U CN203277498U (en) 2012-05-29 2013-05-22 Light-emitting component and device base of light-emitting device thereof
CN2013202827772U CN203277380U (en) 2012-05-29 2013-05-22 Light-emitting component and light-emitting device thereof
CN201310191943.2A CN103456728B (en) 2012-05-29 2013-05-22 Light-emitting component and light-emitting device thereof
CN2013202827946U CN203277485U (en) 2012-05-29 2013-05-22 Light-emitting device, light-emitting diode chip for forming multi-directional light emission and sapphire substrate thereof
US13/903,998 US20130320363A1 (en) 2012-05-29 2013-05-28 Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device
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JP2013112370A JP6504739B2 (en) 2012-05-29 2013-05-28 Light emitting element, light emitting device and base for device
EP18185878.8A EP3415807B1 (en) 2012-05-29 2013-05-29 Illumination device
DE202013012509.8U DE202013012509U1 (en) 2012-05-29 2013-05-29 Light-emitting element, lighting device and its device frame
DE202013012711.2U DE202013012711U1 (en) 2012-05-29 2013-05-29 Light-emitting element, lighting device and its device frame
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DE202013012707.4U DE202013012707U1 (en) 2012-05-29 2013-05-29 Light-emitting element, lighting device and its device frame
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US13/904,038 US9123868B2 (en) 2012-05-29 2013-05-29 Light emitting element and illumination device thereof
EP13169803.7A EP2669947B1 (en) 2012-05-29 2013-05-29 Illumination device comprising light emitting diode chip providing light in multi-directions
EP21186715.5A EP3961706A1 (en) 2012-05-29 2013-05-29 Illumination device
KR1020130061002A KR20130133696A (en) 2012-05-29 2013-05-29 Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip and illumination device
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EP18196452.9A EP3454369A1 (en) 2012-05-29 2013-05-29 Illumination device and device frame thereof
US14/089,708 US9368483B2 (en) 2012-05-29 2013-11-25 Illumination device capable of decreasing shadow of lighting effect
US14/218,869 US9488321B2 (en) 2012-05-29 2014-03-18 Illumination device with inclined light emitting element disposed on a transparent substrate
US14/218,944 US20180006199A9 (en) 2012-05-29 2014-03-18 Semiconductor light emitting element with dispersive optical unit and illumination device comprising the same
US14/340,574 US9711490B2 (en) 2012-05-29 2014-07-25 Illumination device
US15/631,482 US10030857B2 (en) 2012-05-29 2017-06-23 Illumination device
JP2018002356A JP6629359B2 (en) 2012-05-29 2018-01-11 Light emitting element, light emitting device and device base
US16/016,401 US10281123B2 (en) 2012-05-29 2018-06-22 Illumination device
JP2018128212A JP6680834B2 (en) 2012-05-29 2018-07-05 Light emitting device
US16/404,187 US10655826B2 (en) 2012-05-29 2019-05-06 Illumination device
KR1020190145749A KR102139291B1 (en) 2012-05-29 2019-11-14 Illumination device
JP2020049778A JP7050841B2 (en) 2012-05-29 2020-03-19 Light emitting device
US16/876,987 US10989396B2 (en) 2012-05-29 2020-05-18 Illumination device
KR1020200078506A KR102246243B1 (en) 2012-05-29 2020-06-26 Light emitting element, illumination device and foundation thereof
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Publication number Priority date Publication date Assignee Title
TWI737205B (en) * 2020-03-03 2021-08-21 晨豐光電股份有限公司 Backlight module

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* Cited by examiner, † Cited by third party
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* Cited by examiner, † Cited by third party
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