TWI502784B - Manufacturing method of electrode substrate for electroluminescent device and manufacturing method of electroluminescent device - Google Patents

Manufacturing method of electrode substrate for electroluminescent device and manufacturing method of electroluminescent device Download PDF

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TWI502784B
TWI502784B TW102110068A TW102110068A TWI502784B TW I502784 B TWI502784 B TW I502784B TW 102110068 A TW102110068 A TW 102110068A TW 102110068 A TW102110068 A TW 102110068A TW I502784 B TWI502784 B TW I502784B
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electrode
transparent conductive
metal
substrate
conductive pattern
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TW201438306A (en
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Hsi Ming Chang
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Chunghwa Picture Tubes Ltd
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電致發光裝置之電極基板的製作方法以及電致發光裝置的製 作方法Method for producing electrode substrate of electroluminescence device and system for electroluminescence device Method

本發明係關於一種電極基板的製作方法,尤指一種電致發光裝置之電極基板以及電致發光裝置的製作方法。The present invention relates to a method for fabricating an electrode substrate, and more particularly to an electrode substrate for an electroluminescent device and a method for fabricating the same.

有機發光二極體(Organic Light-Emitting Diode,OLED)由於具有高發光效率、不含汞(Hg)和面光源等優點,目前已廣泛地應用在各式發光裝置例如液晶顯示器的背光源以及有機發光二極體顯示器上。習知的有機發光二極體發光裝置係使用透明導電材料例如氧化銦錫(indium tin oxide,ITO)來形成電極以降低對於發光效果的影響。然而,一般來說,透明導電材料的電阻率仍較金屬導電材料高,故當有機發光二極體發光裝置因需較大面積之面光源設計而將對應之電極放大時,容易發生因透明電極阻抗較高而導致發光均勻性不佳等問題。Organic Light-Emitting Diode (OLED) has been widely used in various types of light-emitting devices such as liquid crystal display backlights and organic due to its high luminous efficiency, mercury-free (Hg) and surface light source. On the LED display. A conventional organic light-emitting diode light-emitting device uses a transparent conductive material such as indium tin oxide (ITO) to form an electrode to reduce the influence on the light-emitting effect. However, in general, the resistivity of the transparent conductive material is still higher than that of the metal conductive material. Therefore, when the organic light-emitting diode light-emitting device enlarges the corresponding electrode due to the design of a large-area surface light source, the transparent electrode is likely to occur. The impedance is high and the problem of poor uniformity of illumination is caused.

本發明之目的之一在於提供一種電致發光裝置之電極基板的製作方法以及電致發光裝置的製作方法,利用結晶化透明導電圖案當作遮罩來形成金屬電極墊以及金屬輔助電極,以達到提升發光均勻性、簡化製程、提升製程良率以及提升電極基板電性連接的穩定性與信賴性。One of the objects of the present invention is to provide a method for fabricating an electrode substrate of an electroluminescence device and a method for fabricating the same, which use a crystallized transparent conductive pattern as a mask to form a metal electrode pad and a metal auxiliary electrode. Improve uniformity of illumination, simplify process, improve process yield, and improve stability and reliability of electrical connection of electrode substrates.

本發明之一較佳實施例提供一種電致發光裝置之電極基板的製作方法,包括下列步驟。首先,提供一基板。然後,於基板上形成至少一第一電極與至少一第二電極。接著,形成一金屬層,覆蓋第一電極、第二電極以及基板。之後,於金屬層上形成一非結晶(amorphous)透明導電層。接著,對非結晶透明導電層進行一圖案化製程,以形成一非結晶透明導電圖案。然後,對非結晶透明導電圖案進行一結晶化製程,以使非結晶透明導電圖案轉變為一結晶化透明導電圖案。之後,以結晶化透明導電圖案為遮罩,將未被結晶化透明導電圖案覆蓋之金屬層移除,以於第一電極上形成至少一第一金屬電極墊以及至少一金屬輔助電極,並於第二電極上形成至少一第二金屬電極墊。A preferred embodiment of the present invention provides a method of fabricating an electrode substrate for an electroluminescent device, comprising the following steps. First, a substrate is provided. Then, at least one first electrode and at least one second electrode are formed on the substrate. Next, a metal layer is formed to cover the first electrode, the second electrode, and the substrate. Thereafter, an amorphous transparent conductive layer is formed on the metal layer. Next, a non-crystalline transparent conductive layer is subjected to a patterning process to form an amorphous transparent conductive pattern. Then, the amorphous transparent conductive pattern is subjected to a crystallization process to convert the amorphous transparent conductive pattern into a crystallized transparent conductive pattern. Thereafter, the etched transparent conductive pattern is used as a mask, and the metal layer not covered by the crystallization transparent conductive pattern is removed to form at least one first metal electrode pad and at least one metal auxiliary electrode on the first electrode, and At least one second metal electrode pad is formed on the second electrode.

本發明之一較佳實施例提供一種電致發光裝置的製作方法,包括下列步驟。首先,提供一基板。然後,於基板上形成至少一第一電極與至少一第二電極。接著,形成一金屬層,覆蓋第一電極、第二電極以及基板。之後,於金屬層上形成一非結晶(amorphous)透明導電層。接著,對非結晶透明導電層進行一圖案化製程,以形成一非結晶透明導電圖案。然後,對非結晶透明導電圖案進行一結晶化製程,以使非結晶透明導電圖案轉變為一結晶化透明導電圖案。之後,以結晶化透明導電圖案為遮罩,將未被結晶化透明導電圖案覆蓋之金屬層移除,以於第一電極上形成至少一第一金屬電極墊以及至少一金屬輔助電極,並於第二電極上形成至少一第二金屬電極墊。然後,於第一電極上形成一發光層,並於發光層上形成一第三電極。第三電極係與第二電極電性連接,以使第二電極透過第三電極驅動位於第一電極與第三電極之間的發光層。A preferred embodiment of the present invention provides a method of fabricating an electroluminescent device comprising the following steps. First, a substrate is provided. Then, at least one first electrode and at least one second electrode are formed on the substrate. Next, a metal layer is formed to cover the first electrode, the second electrode, and the substrate. Thereafter, an amorphous transparent conductive layer is formed on the metal layer. Next, a non-crystalline transparent conductive layer is subjected to a patterning process to form an amorphous transparent conductive pattern. Then, the amorphous transparent conductive pattern is subjected to a crystallization process to convert the amorphous transparent conductive pattern into a crystallized transparent conductive pattern. Thereafter, the etched transparent conductive pattern is used as a mask, and the metal layer not covered by the crystallization transparent conductive pattern is removed to form at least one first metal electrode pad and at least one metal auxiliary electrode on the first electrode, and At least one second metal electrode pad is formed on the second electrode. Then, a light emitting layer is formed on the first electrode, and a third electrode is formed on the light emitting layer. The third electrode is electrically connected to the second electrode such that the second electrode drives the luminescent layer between the first electrode and the third electrode through the third electrode.

100‧‧‧電致發光裝置之電極基板100‧‧‧electrode substrate for electroluminescent device

110‧‧‧基板110‧‧‧Substrate

110A‧‧‧上表面110A‧‧‧Upper surface

110B‧‧‧下表面110B‧‧‧ lower surface

120‧‧‧結晶透明導電層120‧‧‧ Crystalline transparent conductive layer

120A‧‧‧第一電極120A‧‧‧first electrode

120C‧‧‧第二電極120C‧‧‧second electrode

130‧‧‧金屬層130‧‧‧metal layer

130A‧‧‧第一金屬電極墊130A‧‧‧First metal electrode pad

130B‧‧‧金屬輔助電極130B‧‧‧Metal auxiliary electrode

130C‧‧‧第二金屬電極墊130C‧‧‧Second metal electrode pad

140‧‧‧非結晶透明導電層140‧‧‧Amorphous transparent conductive layer

140P‧‧‧非結晶透明導電圖案140P‧‧‧Amorphous transparent conductive pattern

141P‧‧‧結晶化透明導電圖案141P‧‧‧crystallized transparent conductive pattern

150‧‧‧絕緣層150‧‧‧Insulation

160‧‧‧發光層160‧‧‧Lighting layer

170‧‧‧第三電極170‧‧‧ third electrode

180‧‧‧封裝材料180‧‧‧Packaging materials

190‧‧‧蓋板190‧‧‧ cover

200‧‧‧電致發光裝置200‧‧‧ electroluminescent device

Z‧‧‧垂直投影方向Z‧‧‧Vertical projection direction

第1圖至第8圖繪示了本發明之一較佳實施例之電致發光裝置之電極基板的製作方法示意圖。1 to 8 are schematic views showing a method of fabricating an electrode substrate of an electroluminescent device according to a preferred embodiment of the present invention.

第9圖與第10圖繪示了本發明之一較佳實施例之電致發光裝置的製作方法示意圖。9 and 10 are schematic views showing a method of fabricating an electroluminescent device according to a preferred embodiment of the present invention.

請參考第1圖至第8圖。第1圖至第8圖繪示了本發明之一較佳實施例之電致發光裝置之電極基板的製作方法示意圖。其中第3圖與第8圖為上視示意圖,第2圖為沿第3圖之剖線A-A’所繪示之剖面示意圖,第7圖為沿第8圖之剖線B-B’所繪示之剖面示意圖。為了方便說明,本發明之各圖式僅為示意以更容易了解本發明,其詳細的比例可依照設計的需求進行調整。本實施例之電致發光裝置之電極基板的製作方法包括下列步驟。首先,如第1圖所示,提供一基板110,基板具有一上表面110A以及一下表面110B。基板110可包括硬質基板例如玻璃基板與陶瓷基板或可撓式基板(flexible substrate)例如塑膠基板或其他適合材料所形成之基板。然後,於基板110之上表面110A上形成一結晶透明導電層120。結晶透明導電層120較佳可包括氧化銦錫(indium tin oxide,ITO)、氧化銦鋅(indium zinc oxide,IZO)、氧化鋁鋅(aluminum zinc oxide,AZO)或其他適合之透明導電材料。此外,結晶透明導電層120較佳係以一物理氣相沉積製程例如濺鍍製程(sputtering process)直接形成於基板110上,但本發明並不以此為限。在本發明之其他較佳實施例中亦可以其他適合的製程方式例如轉印法形成結晶透明導電層120或亦可先於基板110上形成一非結晶透明導電層,再藉由後續之結晶化製程例如高溫退火或雷射退火等方式使非結晶透明導電層產生結晶化而形成結晶透明導電層120。Please refer to Figures 1 to 8. 1 to 8 are schematic views showing a method of fabricating an electrode substrate of an electroluminescent device according to a preferred embodiment of the present invention. 3 is a top view, FIG. 2 is a cross-sectional view taken along line A-A' of FIG. 3, and FIG. 7 is a cross-sectional line B-B' along the eighth figure. A schematic cross-sectional view of the drawing. For the convenience of description, the drawings of the present invention are only for the purpose of understanding the present invention, and the detailed proportions thereof can be adjusted according to the design requirements. The method for fabricating the electrode substrate of the electroluminescent device of the present embodiment includes the following steps. First, as shown in Fig. 1, a substrate 110 is provided having an upper surface 110A and a lower surface 110B. The substrate 110 may include a rigid substrate such as a glass substrate and a ceramic substrate or a flexible substrate such as a plastic substrate or other suitable material. Then, a crystalline transparent conductive layer 120 is formed on the upper surface 110A of the substrate 110. The crystalline transparent conductive layer 120 preferably may include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO) or other suitable transparent conductive material. In addition, the crystalline transparent conductive layer 120 is preferably formed directly on the substrate 110 by a physical vapor deposition process such as a sputtering process, but the invention is not limited thereto. In other preferred embodiments of the present invention, the crystal transparent conductive layer 120 may be formed by other suitable processing methods such as a transfer method, or an amorphous transparent conductive layer may be formed on the substrate 110, followed by subsequent crystallization. A process such as high temperature annealing or laser annealing causes crystallization of the amorphous transparent conductive layer to form the crystalline transparent conductive layer 120.

然後,如第2圖所示,對結晶透明導電層120進行圖案化以於基板110上形成至少一第一電極120A與至少一第二電極120C。此圖案化製程可包括黃光製程、蝕刻製程或其他適合之圖案化製程方式。在本實施例中, 第一電極120A較佳可為一陽極電極而第二電極120C較佳可為一陰極電極,但本發明並不以此為限而可視需要以第一電極120A當作一陽極電極並以第二電極120C當作一陰極電極。此外,如第3圖所示,本實施例較佳係形成一個第一電極120A與兩個第二電極120C進行搭配,第一電極120A的形狀可為工字型,而兩第二電極120C可分別設至於左右兩側,但並不以此為限。值得說明的是,除了上述以對結晶透明導電層120進行圖案化來形成第一電極120A與第二電極120C之外,第一電極120A與第二電極120C亦可以藉由先對一非結晶透明導電層進行圖案化後再進行結晶化製程而形成。Then, as shown in FIG. 2, the crystalline transparent conductive layer 120 is patterned to form at least one first electrode 120A and at least one second electrode 120C on the substrate 110. The patterning process can include a yellow process, an etch process, or other suitable patterning process. In this embodiment, The first electrode 120A is preferably an anode electrode and the second electrode 120C is preferably a cathode electrode. However, the present invention is not limited thereto, and the first electrode 120A can be regarded as an anode electrode and The electrode 120C serves as a cathode electrode. In addition, as shown in FIG. 3, the first electrode 120A is preferably paired with two second electrodes 120C. The shape of the first electrode 120A may be an I-shape, and the two second electrodes 120C may be Set to the left and right sides, but not limited to this. It should be noted that, in addition to the above-described patterning of the crystalline transparent conductive layer 120 to form the first electrode 120A and the second electrode 120C, the first electrode 120A and the second electrode 120C may also be transparent to a non-crystalline first. The conductive layer is patterned and then formed by a crystallization process.

如第4圖所示,於第一電極120A與第二電極120C形成之後,形成一金屬層130,覆蓋第一電極120A、第二電極120C以及基板110。金屬層130較佳可包括銀、鋁、銅、鎂、鉬、上述材料之複合層或上述材料之合金,但並不以此為限。然後,於金屬層130上形成一非結晶(amorphous)透明導電層140。非結晶透明導電層140可包括氧化銦錫、氧化銦鋅、氧化鋁鋅或其他適合之透明導電材料。接著,如第5圖所示,對非結晶透明導電層140進行一圖案化製程,以形成一非結晶透明導電圖案140P。此圖案化製程較佳可包括一黃光製程與一蝕刻製程,但並不以此為限。舉例來說,當非結晶透明導電層140係使用氧化銦錫所形成時,上述之蝕刻製程較佳可為一使用草酸之濕蝕刻製程。由於草酸對於氧化銦錫與一般金屬之間具有較佳的蝕刻選擇比,故較不會於形成非結晶透明導電圖案140P時破壞到金屬層130以及位於金屬層130之下的第一電極120A與第二電極120C。As shown in FIG. 4, after the first electrode 120A and the second electrode 120C are formed, a metal layer 130 is formed to cover the first electrode 120A, the second electrode 120C, and the substrate 110. The metal layer 130 may preferably comprise silver, aluminum, copper, magnesium, molybdenum, a composite layer of the above materials or an alloy of the above materials, but is not limited thereto. Then, an amorphous transparent conductive layer 140 is formed on the metal layer 130. The amorphous transparent conductive layer 140 may comprise indium tin oxide, indium zinc oxide, aluminum zinc oxide or other suitable transparent conductive material. Next, as shown in FIG. 5, the amorphous transparent conductive layer 140 is subjected to a patterning process to form an amorphous transparent conductive pattern 140P. The patterning process preferably includes a yellow process and an etch process, but is not limited thereto. For example, when the amorphous transparent conductive layer 140 is formed using indium tin oxide, the etching process described above may preferably be a wet etching process using oxalic acid. Since oxalic acid has a better etching selectivity ratio between indium tin oxide and a general metal, it is less likely to break into the metal layer 130 and the first electrode 120A located under the metal layer 130 when the amorphous transparent conductive pattern 140P is formed. The second electrode 120C.

然後,如第5圖與第6圖所示,對非結晶透明導電圖案140P進行一結晶化製程,以使非結晶透明導電圖案140P轉變為一結晶化透明導電圖案141P。此結晶化製程可包括高溫退火、雷射退火或其他適合的結晶化製程方式。接著,如第7圖所示,以結晶化透明導電圖案141P為遮罩,將未被結晶 化透明導電圖案141P覆蓋之金屬層130移除,以於第一電極120A上形成至少一第一金屬電極墊130A以及至少一金屬輔助電極130B,並於第二電極120C上形成至少一第二金屬電極墊130C。值得說明的是,移除未被結晶化透明導電圖案141P覆蓋之金屬層130的方式較佳可為一濕式蝕刻製程,但並不以此為限。由於不論是結晶化透明導電圖案141P或第一電極120A與第二電極120C均已是結晶化的透明導電材料,故在蝕刻金屬層130時較不會對結晶化透明導電圖案141P、第一電極120A以及第二電極120C產生破壞。藉由上述製程步驟,即可形成如第7圖與第8圖所示之電致發光裝置之電極基板100。由於本實施例之電致發光裝置之電極基板100的製作方法係利用結晶化透明導電圖案141P當作遮罩來形成第一金屬電極墊130A、第二金屬電極墊130C以及金屬輔助電極130B,故可因此達到簡化製程以及提升製程良率的效果。Then, as shown in FIGS. 5 and 6, the amorphous transparent conductive pattern 140P is subjected to a crystallization process to convert the amorphous transparent conductive pattern 140P into a crystallized transparent conductive pattern 141P. This crystallization process can include high temperature annealing, laser annealing, or other suitable crystallization process. Next, as shown in FIG. 7, the crystallized transparent conductive pattern 141P is used as a mask and will not be crystallized. The metal layer 130 covered by the transparent conductive pattern 141P is removed to form at least one first metal electrode pad 130A and at least one metal auxiliary electrode 130B on the first electrode 120A, and at least one second metal is formed on the second electrode 120C. Electrode pad 130C. It should be noted that the manner of removing the metal layer 130 not covered by the crystallized transparent conductive pattern 141P may be a wet etching process, but is not limited thereto. Since the crystallized transparent conductive pattern 141P or the first electrode 120A and the second electrode 120C are both crystalline and transparent conductive materials, the crystallized transparent conductive pattern 141P and the first electrode are less likely to be etched when the metal layer 130 is etched. The 120A and the second electrode 120C are damaged. By the above-described process steps, the electrode substrate 100 of the electroluminescent device shown in Figs. 7 and 8 can be formed. Since the electrode substrate 100 of the electroluminescent device of the present embodiment is formed by using the crystallized transparent conductive pattern 141P as a mask to form the first metal electrode pad 130A, the second metal electrode pad 130C, and the metal auxiliary electrode 130B, This can achieve the effect of simplifying the process and improving the yield of the process.

如第7圖與第8圖所示,在本實施例之電致發光裝置之電極基板100中,第一金屬電極墊130A以及第二金屬電極墊130C係分別與第一電極120A以及第二電極120C接觸而電性連接。第一金屬電極墊130A以及第二金屬電極墊130C較佳係設置於電致發光裝置之電極基板100的兩側邊,用以與其他外部線路或外部元件電性連接以輸入驅動訊號。第一金屬電極墊130A、金屬輔助電極130B以及第二金屬電極墊130C係以結晶化透明導電圖案141P當作遮罩所形成,因此第一金屬電極墊130A、金屬輔助電極130B以及第二金屬電極墊130C於垂直於基板110之一垂直投影方向Z上均被結晶化透明導電圖案141P所覆蓋。藉由結晶化透明導電圖案141P覆蓋第一金屬電極墊130A、金屬輔助電極130B以及第二金屬電極墊130C之設計可達到提升電致發光裝置之電極基板100電性連接的穩定性與信賴性之效果。此外,第一金屬電極墊130A係與金屬輔助電極130B一體成形並電性相連,且金屬輔助電極130B較佳係環繞第一電極120A之至少一側邊,藉此可補償第 一電極120A電阻值較高所帶來的負面影響,但本發明並不以此為限而可視設計需要調整金屬輔助電極130B的形狀與分布位置以達到所需之電性補償的效果。另請注意,由於結晶化透明導電圖案141P係以非結晶透明導電層(第7圖與第8圖未示)經由圖案化與結晶化而形成,故相較於對直接形成之結晶透明導電層(第7圖與第8圖未示)進行圖案化而形成的第一電極120A與第二電極120C來說,第一電極120A與第二電極120C之片電阻(sheet resistance)係小於或等於結晶化透明導電圖案141P之片電阻。As shown in FIGS. 7 and 8, in the electrode substrate 100 of the electroluminescent device of the present embodiment, the first metal electrode pad 130A and the second metal electrode pad 130C are respectively associated with the first electrode 120A and the second electrode. 120C contacts and is electrically connected. The first metal electrode pad 130A and the second metal electrode pad 130C are preferably disposed on both sides of the electrode substrate 100 of the electroluminescent device for electrically connecting with other external circuits or external components to input driving signals. The first metal electrode pad 130A, the metal auxiliary electrode 130B, and the second metal electrode pad 130C are formed by using the crystallized transparent conductive pattern 141P as a mask, and thus the first metal electrode pad 130A, the metal auxiliary electrode 130B, and the second metal electrode The pad 130C is covered by the crystallized transparent conductive pattern 141P in a vertical projection direction Z perpendicular to the substrate 110. The design of the first metal electrode pad 130A, the metal auxiliary electrode 130B, and the second metal electrode pad 130C is covered by the crystallization transparent conductive pattern 141P to improve the stability and reliability of the electrical connection of the electrode substrate 100 of the electroluminescent device. effect. In addition, the first metal electrode pad 130A is integrally formed and electrically connected to the metal auxiliary electrode 130B, and the metal auxiliary electrode 130B preferably surrounds at least one side of the first electrode 120A, thereby compensating the first metal electrode pad 130B. The negative effect of the high resistance value of one electrode 120A, but the invention is not limited thereto, and the visual design needs to adjust the shape and distribution position of the metal auxiliary electrode 130B to achieve the desired electrical compensation effect. Please note that since the crystallized transparent conductive pattern 141P is formed by patterning and crystallization by an amorphous transparent conductive layer (not shown in FIGS. 7 and 8), it is compared with the directly formed crystalline transparent conductive layer. (Fig. 7 and Fig. 8 are not shown). For the first electrode 120A and the second electrode 120C formed by patterning, the sheet resistance of the first electrode 120A and the second electrode 120C is less than or equal to crystallization. The sheet resistance of the transparent conductive pattern 141P.

請參考第9圖與第10圖。第9圖與第10圖繪示了本發明之一較佳實施例之電致發光裝置的製作方法示意圖。其中第9圖為上視示意圖,第10圖為沿第9圖之剖線C-C’所繪示之剖面示意圖。本實施例之電致發光裝置的製作方法包括下列步驟。首先,如上述內容以及第1圖至第8圖所示,於基板110之上表面110A依序形成第一電極120A與第二電極120C、金屬層130、結晶化透明導電圖案141P、第一金屬電極墊130A、金屬輔助電極130B以及第二金屬電極墊130C。此部分之製程步驟細節與各材料特性已於上述內容說明,故在此並不再贅述。接著,如第9圖與第10圖所示,於第一金屬電極墊130A、金屬輔助電極130B以及第二金屬電極墊130C形成之後,於第一電極120A上形成一發光層160,並於發光層160上形成一第三電極170。第三電極170係與第二電極120C電性連接,以使第二電極120C透過第三電極170驅動位於第一電極120A與第三電極170之間的發光層160。換句話說,第二電極120C與第三電極170可視為一整體之陰極電極,但並不以此為限。此外,發光層160可包括有機發光材料、無機發光材料或其他適合之發光材料。本實施例之電致發光裝置的製作方法可更包括於基板110上形成一絕緣層150、一封裝材料180以及一蓋板190,以形成如第9圖與第10圖所示之電致發光裝置200。絕緣層150係形成於第一電極120A與第二電極120C之間,用以避免形成第三電極170時接觸到第一電極120A。封裝材料 180係用以將蓋板190與基板110黏合,用以達到保護發光層160的效果。由於金屬輔助電極130B較佳係環繞第一電極120A之至少一側邊,故可藉此補償第一電極120A電阻值較高所帶來的負面影響,進而達到提升電致發光裝置200發光均勻性的效果。此外,第三電極170可視需要使用透明或非透明之導電材料,用以使電致發光裝置200可朝上或/與朝下(朝基板110之下表面110B的方向)產生發光效果。Please refer to Figure 9 and Figure 10. 9 and 10 are schematic views showing a method of fabricating an electroluminescent device according to a preferred embodiment of the present invention. Fig. 9 is a top view, and Fig. 10 is a cross-sectional view taken along line C-C' of Fig. 9. The method of fabricating the electroluminescent device of the present embodiment includes the following steps. First, as shown in the above and the first to eighth figures, the first electrode 120A and the second electrode 120C, the metal layer 130, the crystallized transparent conductive pattern 141P, and the first metal are sequentially formed on the upper surface 110A of the substrate 110. The electrode pad 130A, the metal auxiliary electrode 130B, and the second metal electrode pad 130C. The details of the process steps and the characteristics of each material in this section have been described above, and therefore will not be described here. Next, as shown in FIG. 9 and FIG. 10, after the first metal electrode pad 130A, the metal auxiliary electrode 130B, and the second metal electrode pad 130C are formed, a light-emitting layer 160 is formed on the first electrode 120A, and is illuminated. A third electrode 170 is formed on the layer 160. The third electrode 170 is electrically connected to the second electrode 120C such that the second electrode 120C drives the light emitting layer 160 between the first electrode 120A and the third electrode 170 through the third electrode 170. In other words, the second electrode 120C and the third electrode 170 can be regarded as an integral cathode electrode, but not limited thereto. Further, the light emitting layer 160 may include an organic light emitting material, an inorganic light emitting material, or other suitable light emitting material. The method for fabricating the electroluminescent device of the present embodiment further includes forming an insulating layer 150, an encapsulating material 180, and a cap plate 190 on the substrate 110 to form electroluminescence as shown in FIGS. 9 and 10. Device 200. The insulating layer 150 is formed between the first electrode 120A and the second electrode 120C to avoid contact with the first electrode 120A when the third electrode 170 is formed. Packaging material The 180 series is used to bond the cover 190 to the substrate 110 for the purpose of protecting the light-emitting layer 160. Since the metal auxiliary electrode 130B preferably surrounds at least one side of the first electrode 120A, the negative influence caused by the high resistance value of the first electrode 120A can be compensated for, thereby improving the uniformity of illumination of the electroluminescent device 200. Effect. In addition, the third electrode 170 may use a transparent or non-transparent conductive material as needed to cause the electroluminescent device 200 to produce a luminescent effect upward or/downward (toward the lower surface 110B of the substrate 110).

綜合以上所述,本發明之電致發光裝置之電極基板的製作方法以及電致發光裝置的製作方法係利用結晶化透明導電圖案當作遮罩來形成金屬電極墊以及金屬輔助電極,藉此達到簡化製程以及提升製程良率的效果。此外,本發明更利用金屬輔助電極補償透明電極電阻值較高的影響,進而達到提升電致發光裝置發光均勻性的效果。另外,本發明亦藉由結晶化透明導電圖案覆蓋第一金屬電極墊、金屬輔助電極以及第二金屬電極墊之設計而達到提升電致發光裝置之電極基板電性連接的穩定性與信賴性之效果。In summary, the method for fabricating the electrode substrate of the electroluminescent device of the present invention and the method for fabricating the electroluminescence device use the crystallized transparent conductive pattern as a mask to form a metal electrode pad and a metal auxiliary electrode. Simplify the process and increase the yield of the process. In addition, the invention further utilizes the metal auxiliary electrode to compensate for the influence of the higher resistance value of the transparent electrode, thereby achieving the effect of improving the uniformity of illumination of the electroluminescent device. In addition, the present invention also improves the stability and reliability of the electrical connection of the electrode substrate of the electroluminescent device by covering the first metal electrode pad, the metal auxiliary electrode and the second metal electrode pad with the crystallization transparent conductive pattern. effect.

100‧‧‧電致發光裝置之電極基板100‧‧‧electrode substrate for electroluminescent device

110‧‧‧基板110‧‧‧Substrate

120A‧‧‧第一電極120A‧‧‧first electrode

120C‧‧‧第二電極120C‧‧‧second electrode

130‧‧‧金屬層130‧‧‧metal layer

130A‧‧‧第一金屬電極墊130A‧‧‧First metal electrode pad

130B‧‧‧金屬輔助電極130B‧‧‧Metal auxiliary electrode

130C‧‧‧第二金屬電極墊130C‧‧‧Second metal electrode pad

141P‧‧‧結晶化透明導電圖案141P‧‧‧crystallized transparent conductive pattern

Z‧‧‧垂直投影方向Z‧‧‧Vertical projection direction

Claims (10)

一種電致發光裝置之電極基板的製作方法,包括下列步驟:提供一基板;於該基板上形成至少一第一電極與至少一第二電極;形成一金屬層,覆蓋該第一電極、該第二電極以及該基板;於該金屬層上形成一非結晶(amorphous)透明導電層;對該非結晶透明導電層進行一圖案化製程,以形成一非結晶透明導電圖案;對該非結晶透明導電圖案進行一結晶化製程,以使該非結晶透明導電圖案轉變為一結晶化透明導電圖案;以及以該結晶化透明導電圖案為遮罩,將未被該結晶化透明導電圖案覆蓋之該金屬層移除,以於該第一電極上形成至少一第一金屬電極墊以及至少一金屬輔助電極,並於該第二電極上形成至少一第二金屬電極墊。A method for fabricating an electrode substrate of an electroluminescent device, comprising the steps of: providing a substrate; forming at least a first electrode and at least a second electrode on the substrate; forming a metal layer covering the first electrode, the first a second electrode and the substrate; forming an amorphous transparent conductive layer on the metal layer; performing a patterning process on the amorphous transparent conductive layer to form an amorphous transparent conductive pattern; and performing the amorphous transparent conductive pattern on the amorphous conductive conductive pattern a crystallization process for converting the amorphous transparent conductive pattern into a crystallized transparent conductive pattern; and removing the metal layer not covered by the crystallized transparent conductive pattern by using the crystallized transparent conductive pattern as a mask, At least one first metal electrode pad and at least one metal auxiliary electrode are formed on the first electrode, and at least one second metal electrode pad is formed on the second electrode. 如請求項1所述之電致發光裝置之電極基板的製作方法,其中該第一電極與該第二電極的形成方式之步驟更包括對一形成於該基板上之結晶透明導電層進行圖案化。The method for fabricating an electrode substrate of an electroluminescent device according to claim 1, wherein the step of forming the first electrode and the second electrode further comprises patterning a crystalline transparent conductive layer formed on the substrate . 如請求項2所述之電致發光裝置之電極基板的製作方法,其中該結晶透明導電層係以一物理氣相沉積製程直接形成於該基板上。The method of fabricating an electrode substrate for an electroluminescent device according to claim 2, wherein the crystalline transparent conductive layer is directly formed on the substrate by a physical vapor deposition process. 如請求項1所述之電致發光裝置之電極基板的製作方法,其中該第一電極與該第二電極之片電阻(sheet resistance)係小於或等於該結晶化透明導電圖案之片電阻。The method of fabricating an electrode substrate for an electroluminescent device according to claim 1, wherein a sheet resistance of the first electrode and the second electrode is less than or equal to a sheet resistance of the crystallized transparent conductive pattern. 如請求項1所述之電致發光裝置之電極基板的製作方法,其中該第一金屬電極墊係與該金屬輔助電極電性相連,且該金屬輔助電極係環繞該第一電 極之至少一側邊。The method of manufacturing the electrode substrate of the electroluminescent device of claim 1, wherein the first metal electrode pad is electrically connected to the metal auxiliary electrode, and the metal auxiliary electrode surrounds the first electrode At least one side of the pole. 一種電致發光裝置的製作方法,包括下列步驟:提供一基板;於該基板上形成至少一第一電極與至少一第二電極;形成一金屬層,覆蓋該第一電極、該第二電極以及該基板;於該金屬層上形成一非結晶透明導電層;對該非結晶透明導電層進行一圖案化製程,以形成一非結晶透明導電圖案;對該非結晶透明導電圖案進行一結晶化製程,以使該非結晶透明導電圖案轉變為一結晶化透明導電圖案;以該結晶化透明導電圖案為遮罩,將未被該結晶化透明導電圖案覆蓋之該金屬層移除,以於該第一電極上形成至少一第一金屬電極墊以及至少一金屬輔助電極,並於該第二電極上形成至少一第二金屬電極墊;於該第一電極上形成一發光層;以及於該發光層上形成一第三電極,其中該第三電極係與該第二電極電性連接,以使該第二電極透過該第三電極驅動位於該第一電極與該第三電極之間的該發光層。A method for fabricating an electroluminescent device, comprising the steps of: providing a substrate; forming at least a first electrode and at least a second electrode on the substrate; forming a metal layer covering the first electrode, the second electrode, and Forming a non-crystalline transparent conductive layer on the metal layer; performing a patterning process on the amorphous transparent conductive layer to form an amorphous transparent conductive pattern; performing a crystallization process on the amorphous transparent conductive pattern to Converting the amorphous transparent conductive pattern into a crystallized transparent conductive pattern; using the crystallized transparent conductive pattern as a mask, removing the metal layer not covered by the crystallized transparent conductive pattern for the first electrode Forming at least one first metal electrode pad and at least one metal auxiliary electrode, and forming at least one second metal electrode pad on the second electrode; forming a light emitting layer on the first electrode; and forming a light emitting layer on the light emitting layer a third electrode, wherein the third electrode is electrically connected to the second electrode, so that the second electrode is driven by the third electrode The light emitting layer between the electrode and the third electrode. 如請求項6所述之電致發光裝置製作方法,其中該第一電極與該第二電極的形成步驟更包括對一形成於該基板上之結晶透明導電層進行圖案化。The method of fabricating an electroluminescent device according to claim 6, wherein the forming of the first electrode and the second electrode further comprises patterning a crystalline transparent conductive layer formed on the substrate. 如請求項7所述之電致發光裝置的製作方法,其中該結晶透明導電層係以一物理氣相沉積製程直接形成於該基板上。The method of fabricating an electroluminescent device according to claim 7, wherein the crystalline transparent conductive layer is directly formed on the substrate by a physical vapor deposition process. 如請求項6所述之電致發光裝置的製作方法,其中該第一電極與該第二電極之片電阻係小於或等於該結晶化透明導電圖案之片電阻。The method of fabricating the electroluminescent device of claim 6, wherein the sheet resistance of the first electrode and the second electrode is less than or equal to the sheet resistance of the crystallized transparent conductive pattern. 如請求項6所述之電致發光裝置的製作方法,其中該第一金屬電極墊係與該金屬輔助電極電性相連,且該金屬輔助電極係環繞該第一電極之至少一側邊。The method of fabricating an electroluminescent device according to claim 6, wherein the first metal electrode pad is electrically connected to the metal auxiliary electrode, and the metal auxiliary electrode surrounds at least one side of the first electrode.
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