TWI480414B - Gas injection system and vapor phase epitaxial device - Google Patents

Description

Jet system and gas phase epitaxy equipment

The present invention relates to a jet system for processing a semiconductor element and a vapor phase epitaxy apparatus using the same, and more particularly to a jet system for processing a semiconductor element that prevents deposits from clogging a gas injection hole and a gas phase using the same. Epitaxial equipment.

The semiconductor integrated circuit (IC) industry has experienced remarkable growth. With the evolution of semiconductor integrated circuits in the technical aspects of materials and design, a generation of semiconductor integrated circuits has been developed, each of which has a smaller volume and higher circuit complexity than the previous generation. In the development of semiconductor integrated circuits, when the geometry is reduced, the functional density (i.e., the number of devices connected to each other on a wafer area) is relatively increased. The above-described process of scale reduction is usually accompanied by the increase in production efficiency and the associated cost reduction, and the reduction in scale also increases the complexity of manufacturing semiconductor integrated circuits. Therefore, the development of semiconductor integrated circuits in processes and manufacturing methods also needs to progress at the same time.

For example, due to the wide bandgap characteristics of N-base semiconductors, it has the advantages of short wavelength, high power, high frequency and high temperature operation compared with other third-five semiconductors. Therefore, it is more important in the application of blue, violet, white light emitting diodes (LEDs), blue laser diodes (LDs) and high voltage semiconductor power devices. Head The mainstream devices for manufacturing the EPI wafer and the tri-five compound semiconductor substrate are respectively an organometallic vapor phase epitaxy device (MOCVD) and a hydride vapor epitaxy device (HVPE). Both of them basically discharge the third and fifth precursor gases through the gas jet head toward the gas jet holes at the direction of the growth substrate, and then form a tri-five compound semiconductor film layer on the semiconductor element. In the above fabrication, the gas flow stability in the vapor phase epitaxy apparatus has a decisive influence on the quality uniformity and growth rate of the grown semiconductor film layer. Therefore, how to improve the airflow stability in the gas phase epitaxial device is an important issue.

According to an embodiment of the invention, the jet system includes a first jet unit, a first gas passage, and a second gas passage. The first jet unit includes a first member, and at least one first opening extends through the first member. The first gas passage provides one or more third group precursor gases to the one or more semiconductor components via the first opening. The second gas passage provides a fifth group of precursor gases. The fifth group precursor gas is reacted with a Group III precursor gas to form a nitride to one or more semiconductor elements. Since the surface of the first jet unit facing the one or more semiconductor elements is made of molybdenum metal having a purity of 99% or more, the first jet unit of the present invention does not have the property of adhering nitride.

Another embodiment of the present invention also provides a vapor phase epitaxy apparatus using a jet system comprising the above described jet system, a second jet unit, and a substrate for holding one or more semiconductor components. At least one second opening a second jet unit, and the second gas passage provides a fifth group of precursor gases via the second opening. Since the surface of the second jet unit facing the one or more semiconductor elements is made of molybdenum metal having a purity greater than, equal to, or approximately 99%, the second jet unit does not have the property of attaching a tri-five compound.

In order to make the objects, features, and advantages of the present invention more comprehensible, the preferred embodiments of the invention will be described in detail with reference to FIG. The present specification provides various embodiments to illustrate the technical features of various embodiments of the present invention. The arrangement of the various elements in the embodiments is for illustrative purposes and is not intended to limit the invention. The overlapping portions of the drawings in the embodiments are for the purpose of simplifying the description and are not intended to be related to the different embodiments.

Referring to FIG. 1, the vapor phase epitaxy apparatus 1 includes a cavity C1, a substrate 10, and a jet system 110. The vapor phase epitaxial apparatus 1 is, for example, a semiconductor organometallic vapor phase epitaxy apparatus or a hydride vapor phase epitaxy apparatus, which can be used to fabricate a light emitting diode element or a nitride semiconductor substrate.

The substrate 10 is disposed in the cavity C1 and configured to sandwich one or more semiconductor elements W. The jet system 110 includes a first gas passage 111, a second gas passage 112, and a first jet unit 113. The first jet unit 113 further includes an intermediate member 114 and a bottom plate 115. The first gas passage 111 provides one or more third-group precursor gases S1, and the second gas passage 112 provides a fifth-group precursor gas S2. The third-group precursor gas S1 and the fifth-group precursor gas S2 flow through the flow path inside the intermediate member 114, and are then ejected toward the semiconductor element W through a plurality of openings 115a penetrating through the bottom plate 115. At this time, the third group precursor gas S1 and the fifth group precursor gas S2 (for example, ammonia, NH ₃ ) are reacted in a space above the substrate 10, and a film of the group III nitride is grown on the semiconductor element W. In another embodiment, the bottom plate 115 includes only an opening configuration for supplying the third group precursor gas S1 and the fifth group precursor gas S2.

However, as shown in FIG. 1, when the third group precursor gas S1 and the fifth group precursor gas S2 (for example, ammonia, NH ₃ ) are mixed in the space above the substrate 10, part of the mixed gas 144 will rebound from the substrate 10. As a result, the surface of the bottom plate 115 also accumulates unnecessary third-group nitride. The deposition of the bottom plate 115 occluding the opening 115a of the bottom plate 115 will cause instability of the mixed flow in the space above the substrate 10, thereby affecting the processing quality of the semiconductor element W. Further, if the deposit formed on the substrate 115 is dropped on the semiconductor element W, the semiconductor element W is damaged and cannot be used. In order to solve the above problems, embodiments of various vapor phase epitaxial devices are disclosed as follows.

Refer to Section 2A, FIG. 2B, FIG. 2A shows a schematic diagram of the gas phase epitaxy apparatus 2 one embodiment of the present invention, wherein FIG. 2B shows an enlarged area of FIG. ₁ M of FIG. 2A. The same or similar structures of the vapor phase epitaxy apparatus 2 and the vapor phase epitaxy apparatus 1 of Fig. 1 will be designated by the same or similar reference numerals, and their features will not be described again. The vapor phase epitaxial apparatus 2 is different from the vapor phase epitaxial apparatus 1 in that the first jet unit 213 is replaced by a first jet unit 213 in the jet system 210 of the vapor phase epitaxy apparatus 2, wherein the first jet unit 213 includes An intermediate member 114 and a first member 215.

The first member 215 is, for example, a plate shape, and the plurality of first openings 215a The first member 215 is worn, wherein the first member 215 has a thickness of between 0.1 mm and 10 mm. The gas stream 214 in which the third group precursor gas S1 and the fifth group precursor gas S2 are mixed is ejected toward the semiconductor element W after flowing through the intermediate member 114 and the first opening 215a.

The inventors of the present invention have found that the molybdenum metal has the property of not contaminating the group III nitride, and is made of molybdenum metal having a purity of 99% or more by the surface 213a of the first electrode unit 213 facing the semiconductor element W. In order to prevent the first jet unit 213 from attaching any nitride thereon. In detail, in this embodiment, the outer surface of the first member 215 directly faces the semiconductor element W, and the entirety of the first member 215 is made of molybdenum metal having a purity greater than, equal to, or approximately 99%. Therefore, the Group III nitride will not adhere to the first jet unit 213. In one embodiment, the first member 215 is comprised of 99.96% molybdenum, 0.004% iron, and 0.008% other materials. In another embodiment, the first member 215 is made of molybdenum metal having a purity greater than, equal to, or approximately 99.95%. In another embodiment, the first member 215 is made of a molybdenum alloy material having a purity greater than, equal to, or approximately 90%.

As shown in FIG. 2B, since the first opening 215a is not blocked by any deposit, the jet angle of the airflow 214 after passing through the first opening 215a does not change, and the airflow 214 can maintain a certain flow rate through the first opening. Hole 215a.

Referring to Figures 3A and 3B, Figure 3A shows a schematic view of a vapor phase epitaxy apparatus 3 according to an embodiment of the present invention, wherein Figure 3B shows an enlarged view of the M ₂ region of Figure 3A. The same or similar structures of the vapor phase epitaxial apparatus 3 and the vapor phase epitaxy apparatus 1 of Fig. 1 will be designated by the same or similar reference numerals, and their features will not be described again. Compared with the vapor phase epitaxy apparatus 1, the gas jet system 310 of the vapor phase epitaxy apparatus 3 further includes a cover plate 315 on the outer surface of the bottom plate 115. In detail, the first jet unit 313 of the vapor phase epitaxy apparatus 3 includes an intermediate member 114, a bottom plate 115, and a cover plate 315. For convenience of explanation, in this embodiment, the first member is referred to as a cover plate 315, the second member is referred to as a bottom plate 115, and the second opening is referred to as an opening 115a.

The first member 315 is plate-shaped, and the plurality of first openings 315a penetrate through the first member 315, wherein the thickness of the first member 315 is between 0.1 mm and 10 mm. The second member 115 is coupled to the opposite side of the first member 315 facing the semiconductor component W, wherein the first member 315 is coupled to the second member 115 by screws, jams or soldering.

In this embodiment, the outer surface of the first member 315 directly faces the semiconductor element W, and the entirety of the first member 315 is made of molybdenum metal having a purity greater than, equal to, or approximately 99%. That is, the surface 313a of the first jet unit 313 facing the semiconductor element W is made of molybdenum metal having a purity greater than, equal to, or approximately 99%. Therefore, the tri-five compound will not adhere to the first jet unit 313. In one embodiment, the first member 315 is comprised of 99.96% molybdenum, 0.004% iron, and 0.008% other materials. In another embodiment, the first member 315 is made of molybdenum metal having a purity greater than, equal to, or approximately 99.95%. In another embodiment, the first member 315 is made of a molybdenum alloy material having a purity greater than, equal to, or approximately 90%. The second member 115 can be made of any suitable material, such as a metallic material, a quartz material, or a ceramic material.

As shown in FIG. 3B, the first opening 315a and the second opening 115a are This is the same and has the same aperture. The air jet angle of the airflow 314 after passing through the second opening 115a and the first opening 315a does not change, and the airflow 314 can maintain a certain flow rate through the second opening 115a and the first opening 315a.

Referring to Figures 4A and 4B, Figure 4A shows a schematic view of a vapor phase epitaxy apparatus 4 according to an embodiment of the present invention, wherein Figure 4B shows an enlarged view of the M ₃ region of Figure 4A. The same or similar structures of the vapor phase epitaxial apparatus 4 and the vapor phase epitaxy apparatus 1 of Fig. 1 will be designated by the same or similar reference numerals, and their features will not be described again. Compared with the vapor phase epitaxial device 1, the gas jet system 410 of the vapor phase epitaxy device 4 further includes a molybdenum metal plating film 116 on the bottom plate 115. In detail, the first air blowing unit 413 of the vapor phase epitaxy apparatus 4 includes an intermediate member 114, a bottom plate 115, and a molybdenum metal plating film 116. For convenience of explanation, in this embodiment, the first member 115 is referred to as a bottom plate, and the first opening 115a is referred to as an opening.

The molybdenum metal plating film 116 is formed on the outer surface of the first member 115 facing the semiconductor element W or the outer surface of the first member 115 facing the semiconductor element W and the inner edge of the first opening 115a, wherein the molybdenum metal plating film 116 is made of purity greater than or equal to Or approximately 99% of molybdenum metal. In one embodiment, the molybdenum metal plating film 116 is formed on the first member 115 by vapor phase coating or liquid phase plating.

Since the surface 413a of the first air-ejection unit 413 facing the semiconductor element W is made of molybdenum metal having a purity greater than, equal to, or approximately 99%, the first air-ejection unit 413 will have no characteristics of attaching any nitride. As shown in FIG. 4B, since the first opening 115a is not blocked by any deposit, the jet angle of the airflow 414 after passing through the first opening 115a does not change, and the gas Stream 414 can maintain a certain flow rate through first opening 115a.

Referring to FIGS. 5A and 5B, a vapor phase epitaxy apparatus 5 according to another embodiment of the present invention includes a cavity C2, a substrate 20, and a jet system 500. The vapor phase epitaxy apparatus 5 is a horizontal HVPE reactor which can be used to fabricate light emitting diode elements and nitride semiconductor substrates.

The substrate 20 is disposed in the cavity C2 and configured to sandwich one or more semiconductor elements W. The jet system 500 includes two first gas passages 511, a second gas passage 512, two first jet units 513, and a second jet unit 516. Each of the first air blowing units 513 is coupled to a first gas passage 511 and is 10-15 mm apart from each other. Each first jet unit 513 includes an intermediate member 514 and a first member 515.

The first gas passage 511 provides a third group of precursor gases (for example, hydrogen chloride, HCl), and the third group of precursor gases are passed through the intermediate member 514 and reacted with elements disposed on the carrier vessel 514a (eg, gallium, Ga). The plurality of first openings 515a of the first member 515 are ejected toward the semiconductor element W. On the other hand, the second gas passage 512 provides a fifth group precursor gas (for example, ammonia, NH ₃ ) which is ejected toward the semiconductor element W via the second opening 516a penetrating the second member 516. At this time, the third group precursor gas and the fifth group precursor gas (for example, ammonia, NH ₃ ) are reacted in a space above the substrate 20 to further grow a film of the group III nitride on the semiconductor element W.

Referring to FIG. 6, in this embodiment, the first member 515 is tubular, and the first opening 515a extends through the inner and outer sidewalls of the first member 515, wherein the first member 515 is made of a purity greater than, equal to, or approximately 99%. Made of molybdenum metal, And the outer surface of the first member 515 directly faces the semiconductor element W. Therefore, the surface 513a of the first air-ejection unit 513 facing the semiconductor element W is made of molybdenum metal having a purity greater than, equal to, or approximately 99%, and the first air-ejection unit 513 has no characteristics of adhering nitride. On the other hand, as shown in Fig. 5B, the surface 516b of the second air-ejection unit 516 facing the semiconductor element W is also made of molybdenum metal having a purity greater than, equal to, or approximately 99%, so that the second air-jet unit 516 is also not attached. Characteristics of nitrides.

Referring to FIGS. 7A-7C, FIG. 7A shows the result of vapor deposition of the first member made of quartz in the vapor phase epitaxial apparatus 5 in place of the first member 515 made of molybdenum metal for 180 minutes; The figure shows the result of vapor deposition of the first member made of pyrolytic metal in the vapor phase epitaxy apparatus 5 after replacing the first member 515 made of molybdenum metal for 180 minutes; FIG. 7C shows the vapor phase epitaxy The first member 515 of molybdenum metal in apparatus 5 was subjected to vapor deposition for 180 minutes. It can be understood from the observation of Figures 7A-7C that the gas jet of the first member 515 of the vapor phase epitaxy apparatus 5 does not have any deposition after 180 minutes of vapor deposition. Conversely, the gas jet of the first member made of quartz or pyrolytic boron nitride has formed a crater-shaped deposit.

Referring to Fig. 8, there is shown a relationship between the diameters of the gas jet holes and the growth time of the above three first members made of quartz, pyrolytic boron nitride, and molybdenum metal at the time of vapor deposition. As is clear from Fig. 8, the diameter of the gas injection hole of the first member 515 of the vapor phase epitaxy apparatus 5 remained constant at 600 minutes. However, the diameter of the gas jet of the first member made of quartz or pyrolytic boron nitride will be completely closed within 300 minutes.

The embodiment of the first jet unit 513 of the vapor phase epitaxy apparatus 5 is not limited to the above embodiment, and various embodiments of the first jet unit are exemplified below:

Referring to FIG. 9, in another embodiment, the first air injection unit 513 of the vapor phase epitaxy apparatus 5 is replaced by a first air injection unit 613, wherein the first air injection unit 613 includes an intermediate member 514 (Fig. 5A). ), a first member 615, and a molybdenum metal coating 617.

The first member 615 is tubular and coupled to the intermediate member 514 (Fig. 5A). The first opening 615a extends through the inner and outer sidewalls of the first member 615, wherein the first member 615 is made of any suitable material, such as a metallic material, a quartz material, or a ceramic material. The molybdenum metal plating film 617 is formed on the outer surface of the first member 615 facing the semiconductor element W (Fig. 5A) or the outer surface of the first member 615 facing the semiconductor element W (Fig. 5A) and the inner edge of the first opening 615a, wherein The molybdenum metal plating film 617 is made of molybdenum metal having a purity greater than, equal to, or approximately 99%, and the molybdenum metal plating film 617 has a thickness of between 0.1 um and 20 um.

As shown in FIG. 9, the molybdenum metal plating film 617 extends on the outer surface of the first member 615 toward the opposite sides centering on the first opening 615a, and the coverage D of the molybdenum metal plating film 617 is greater than or equal to the first member 615. Half the circumference of the outer diameter. Therefore, the surface 613a of the first air-ejection unit 613 facing the semiconductor element W is made of molybdenum metal having a purity greater than, equal to, or approximately 99%, and the first air-ejection unit 613 has no characteristics of adhering nitride.

Referring to FIGS. 10 and 11, in another embodiment, the first air injection unit 513 of the vapor phase epitaxy apparatus 5 is replaced by a first air injection unit 713. The first first air injection unit 713 includes an intermediate member 514 (Fig. 5A), a first member 715, and a second member 716.

The first member 715 is tubular and has a plurality of first openings 715a extending through the inner and outer sidewalls of the first member 715 and a groove 715b formed on the opposite side of the first member 715 distributing the first opening 715a, wherein the first opening 715a Has a width W ₁ . The second member 716 is tubular and coupled to the intermediate member 514 (Fig. 5A) and sleeved in the first member 715. The second opening 716a extends through the inner and outer sidewalls of the second member 716, wherein the second opening 716a has a width W ₂ and the width W ₂ is greater than the width W ₁ , thus facilitating the pair of the first opening 715 a and the second opening 716 a Bit. In addition, the groove 715b of the first member 715 provides a volume increase allowable amount to maintain the airtightness between the first member 715 and the second member 716 after being thermally expanded.

In an embodiment, the first member 715 is made of molybdenum metal having a purity greater than, equal to, or approximately 99%, and the outer surface of the first member 715 directly faces the semiconductor component W (Fig. 5A). In one embodiment, the first member 715 is comprised of 99.96% molybdenum, 0.004% iron, and 0.008% other materials. In another embodiment, the first member 715 is made of molybdenum metal having a purity greater than, equal to, or approximately 99.95%. In another embodiment, the first member 715 is made of a molybdenum alloy material having a purity greater than or equal to 90%. Additionally, the second member 716 can be made of any suitable material, such as a metallic material, a quartz material, or a ceramic material. Since the surface 713a of the first air-ejection unit 713 facing the semiconductor element W (Fig. 5A) is made of molybdenum metal having a purity greater than, equal to, or approximately 99%, the first air-ejection unit 713 has no characteristics of adhering nitride. In addition, the surface of the first member 715 The reference length of the roughness is 2.5, Ra < 6.3a, but is not limited thereto.

It should be understood that all of the elements of the vapor phase epitaxy apparatus 2, 3, 4, 5 that may be contaminated with the third and fifth group nitrides (for example, the substrate 10 or the substrate 20) may be replaced by molybdenum metal or molybdenum alloy. It is made and is not limited to the above embodiment.

Although the present invention has been disclosed in its preferred embodiments, it is not intended to limit the present invention, and it is possible to make some modifications and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

1, 2, 3, 4, 5‧‧‧ gas phase epitaxy equipment

10, 20‧‧‧ substrate

110, 210, 310, 410‧‧‧ jet system

111‧‧‧First gas path

112‧‧‧Second gas path

113, 213, 313, 413‧‧‧ first jet unit

113a, 213a, 313a, 413a‧‧‧ surface

114‧‧‧Intermediate components

115‧‧‧Bottom plate (first component) (second component)

115a‧‧‧opening (first opening) (second opening)

116‧‧‧Molybdenum metal coating

144‧‧‧ mixed gas

214, 314, 414‧‧‧ airflow

215‧‧‧ first component

215a‧‧‧first opening

315‧‧‧ Cover (first component)

315a‧‧‧First opening

500‧‧‧jet system

511‧‧‧First gas path

512‧‧‧Second gas path

513, 613, 713‧‧‧ first jet unit

513a, 613a, 713a‧‧‧ surface

514‧‧‧Intermediate components

515, 615, 715‧‧‧ first component

515a, 615a, 715a‧‧‧ first opening

516‧‧‧second jet unit

516a‧‧‧Second opening

617‧‧‧Molybdenum metal coating

715b‧‧‧ trench

716‧‧‧ second component

716a‧‧‧Second opening

C1, C2‧‧‧ cavity

M ₁ , M ₂ , M ₃ ‧‧‧ areas

S1‧‧‧Group III precursor gases

S2‧‧‧Five Group Precursor Gas

W‧‧‧ wafer

W ₁ , W ₂ ‧ ‧ width

1 shows a schematic view of a vapor phase epitaxy apparatus has the vertical; FIG. 2A shows a schematic embodiment of the vapor phase epitaxy apparatus of one embodiment of the present invention; FIG. 2B shows an enlarged area of FIG. ₁ M of FIG. 2A; the first 3A is a schematic view showing a vapor phase epitaxy apparatus according to an embodiment of the present invention; FIG. 3B is an enlarged view of the M ₂ region of FIG. 3A; and FIG. 4A is a view showing a vapor phase epitaxy apparatus according to an embodiment of the present invention; 4B is a magnified view of the M ₃ region of FIG. 4A; FIG. 5A is a schematic view showing a vapor phase epitaxial device according to an embodiment of the present invention; and FIG. 5B is a view showing a portion of the first jet unit of FIG. 5A; Side view of the structure; Figure 6 shows a cross-sectional view of another portion of the first jet unit of Figure 5A; Figure 7A shows the result of vapor deposition for 180 minutes with the first member made of quartz; The result of vapor deposition for 180 minutes after the first member made of pyrolytic boron nitride is shown; FIG. 7C shows the result of vapor deposition for 180 minutes after the first member made of molybdenum metal; FIG. 8 shows a jet of a first component made of a different material during vapor deposition a relationship between the diameter and the growth time; FIG. 9 is a cross-sectional view showing a part of the structure of the first air injection unit of another embodiment; and FIG. 10 is a cross-sectional view showing a part of the structure of the first air injection unit of another embodiment; 11 is a schematic view showing a part of the structure of the first member of FIG. 10, in which the first member is cut away in the longitudinal direction thereof.

2‧‧‧Vapor Phase Epitaxy Equipment

10‧‧‧Substrate

111‧‧‧First gas path

112‧‧‧Second gas path

114‧‧‧Intermediate components

210‧‧‧jet system

213‧‧‧First Jet Unit

213a‧‧‧ surface

214‧‧‧ airflow

215‧‧‧ first component

215a‧‧‧first opening

C1‧‧‧ cavity

M ₁ ‧‧‧ area

S1‧‧‧Group III precursor gases

S2‧‧‧Five Group Precursor Gas

W‧‧‧ wafer

Claims (21)

A jet system for processing a semiconductor component, the jet system comprising: a first jet unit comprising a first member, at least one first opening extending through the first member; a first gas passage via the first opening Providing one or more third-group precursor gases toward the semiconductor component; and a second gas passage providing a fifth-group precursor gas, the fifth-group precursor gas reacting with the third-group precursor gas to form a A tri-five compound is on the semiconductor component; wherein the surface of the first jet unit is made of molybdenum metal having a purity greater than or equal to 99%, such that the first jet unit does not have the property of attaching the tri-five compound. The jet system of claim 1, wherein the first member is made of molybdenum metal having a purity greater than or equal to 99%, and the outer surface of the first member directly faces the semiconductor component. The jet system of claim 2, wherein the first jet unit further comprises a second member, the at least one second opening extending through the second member, wherein the third group precursor gas is sequentially passed through the second member The second opening, the first opening provides one or more third group precursor gases toward the semiconductor component. The jet system of claim 3, wherein the first member and the second member are both plate-shaped, and the second member is coupled to the opposite side of the first member facing the semiconductor component. a jet system as described in claim 4, wherein the A member is coupled to the second member in a screw, jam or weld manner. The jet system of claim 3, wherein the first member and the second member are tubular, and the second member is sleeved in the first member. The jet system of claim 6, wherein the second opening has a larger diameter than the first opening. The jet system of claim 6, wherein the first member further comprises a groove formed on an opposite side of the first member to distribute the first opening. The jet system of claim 3, wherein the second member is made of a metal material, a quartz material or a ceramic material. The jet system of claim 2, wherein the first member has a thickness of between 0.1 mm and 10 mm. The jet system of claim 1, wherein the first jet unit further comprises a molybdenum metal coating formed on the outer surface of the first member facing the semiconductor component. The jet system of claim 11, wherein the first member is tubular, and the molybdenum metal coating extends toward the opposite sides from the first opening to extend to the outer surface of the first member. The air-jet system of claim 12, wherein an inner edge of the first opening connects the first member to face an outer surface of the semiconductor component. The jet system of claim 12, wherein an inner edge of the first opening connects the first member to face the semiconductor component And the molybdenum metal plating film is formed on an inner edge of the first opening. The jet system of claim 11, wherein the molybdenum metal coating has a thickness of between 0.1 um and 20 um. The jet system of claim 1, wherein the second gas passage provides the fifth group precursor gas via the first opening. The jet system of claim 1, further comprising a second jet unit, at least one second opening extending through the second jet unit, and the second gas passage providing the fifth via the second opening Family precursor gas. The jet system of claim 17, wherein the surface of the second air-jet unit facing the semiconductor component is made of molybdenum metal having a purity greater than or equal to 99%, such that the second jet unit does not have the three-five attached The characteristics of the family compound. A vapor phase epitaxial apparatus comprising: a cavity; a substrate disposed in the cavity and configured to clamp a semiconductor component; and a jet system disposed in the cavity, the jet system comprising: a first jet The unit includes a first member through which the at least one first opening penetrates; a first gas passage through which the one or more third group precursor gases are supplied toward the semiconductor element; and a first gas passage; a second gas passage providing a Group 5 precursor gas, the Group 5 precursor gas reacting with a Group III precursor gas to form a Group III compound The semiconductor component; wherein the surface of the first air-emitting unit facing the semiconductor component is made of molybdenum metal having a purity of greater than or equal to 99%, so that the first air-jet unit does not have the property of attaching the tri-five compound. The vapor phase epitaxial apparatus according to claim 19, wherein the jet system further comprises a second jet unit, at least one second opening penetrates the second jet unit, and the second gas passage passes through the first The second opening provides the fifth group precursor gas, wherein the surface of the second jet unit facing the semiconductor element is made of molybdenum metal having a purity greater than or equal to 99%, so that the second jet unit does not have the tri-five compound attached thereto Characteristics. The vapor phase epitaxial apparatus according to claim 19, wherein the vapor phase epitaxial apparatus is a semiconductor organometallic vapor phase epitaxy apparatus or a hydride vapor phase epitaxy apparatus.