TWI455867B - Nano-structure pn junction forming on a conductive thin film and a method thereof - Google Patents

Nano-structure pn junction forming on a conductive thin film and a method thereof Download PDF

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Publication number
TWI455867B
TWI455867B TW101102110A TW101102110A TWI455867B TW I455867 B TWI455867 B TW I455867B TW 101102110 A TW101102110 A TW 101102110A TW 101102110 A TW101102110 A TW 101102110A TW I455867 B TWI455867 B TW I455867B
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Taiwan
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layer
nanostructure
film layer
conductive
patent application
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TW101102110A
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Chinese (zh)
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TW201331118A (en
Inventor
Tsung Ming Tsai
Ting Chang Chang
Kuan Chang Chang
Yong En Syu
cheng hua Li
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Univ Nat Sun Yat Sen
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Publication of TWI455867B publication Critical patent/TWI455867B/en

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Claims (10)

一種導電薄膜上形成具奈米結構，其包含：一導電薄膜層，其具有一預定表面；及一奈米構造層，其以超臨界流體形成於該導電薄膜層之預定表面上；其中該奈米構造層形成一光電流傳輸層，以提升太陽能轉換傳輸效率。Forming a nanostructure on a conductive film, comprising: a conductive film layer having a predetermined surface; and a nanostructure layer formed on a predetermined surface of the conductive film layer by a supercritical fluid; wherein the nano The rice structural layer forms a photocurrent transport layer to enhance solar energy conversion transmission efficiency. 依申請專利範圍第1項所述之導電薄膜上形成具奈米結構，其中該導電薄膜層選自一透明導電氧化薄膜層。A nanostructure is formed on the conductive film according to claim 1 of the patent application, wherein the conductive film layer is selected from a transparent conductive oxide film layer. 依申請專利範圍第2項所述之導電薄膜上形成具奈米結構，其中該透明導電氧化薄膜層係屬一銦錫氧化物薄膜層或一銦鋅氧化物薄膜層。A nanostructure is formed on the conductive film according to the second aspect of the patent application, wherein the transparent conductive oxide film layer is an indium tin oxide film layer or an indium zinc oxide film layer. 依申請專利範圍第1項所述之導電薄膜上形成具奈米結構，其中該奈米構造層包含一n型氧化鋅層、一氧化鋅層及一p型氧化鋅層。A nanostructure is formed on the conductive film according to the first aspect of the patent application, wherein the nanostructure layer comprises an n-type zinc oxide layer, a zinc oxide layer and a p-type zinc oxide layer. 依申請專利範圍第1項所述之導電薄膜上形成具奈米結構，其中該超臨界流體選自二氧化碳超臨界流體。A nanostructure is formed on the conductive film according to claim 1 of the patent application, wherein the supercritical fluid is selected from the group consisting of carbon dioxide supercritical fluids. 一種導電薄膜上形成具奈米結構pn接面方法，其包含：提供一導電薄膜層；形成一金屬層於該導電薄膜層上；及利用一超臨界流體將該金屬層在該導電薄膜層上成長形成一奈米構造層。A method for forming a pn junction with a nanostructure on a conductive film, comprising: providing a conductive thin film layer; forming a metal layer on the conductive thin film layer; and using the supercritical fluid to coat the metal layer on the conductive thin film layer It grows to form a nanostructure layer. 依申請專利範圍第6項所述之導電薄膜上形成具奈米結構pn接面方法，其中該導電薄膜層選自一透明導電氧化薄膜層。A method for forming a pn junction with a nanostructure is formed on the electroconductive film according to claim 6 of the patent application, wherein the electroconductive thin film layer is selected from a transparent conductive oxide film layer. 依申請專利範圍第7項所述之導電薄膜上形成具奈米結構pn接面方法，其中該透明導電氧化薄膜層係屬一銦錫氧化物薄膜層或一銦鋅氧化物薄膜層。A method for forming a pn junction with a nanostructure according to the seventh aspect of the patent application scope, wherein the transparent conductive oxide film layer is an indium tin oxide film layer or an indium zinc oxide film layer. 依申請專利範圍第6項所述之導電薄膜上形成具奈米結構pn接面方法，其中該奈米構造層包含一n型氧化鋅層、一氧化鋅層及一p型氧化鋅層。A nano-structure pn junction method is formed on the electroconductive thin film according to claim 6 of the patent application scope, wherein the nanostructure layer comprises an n-type zinc oxide layer, a zinc oxide layer and a p-type zinc oxide layer. 依申請專利範圍第6項所述之導電薄膜上形成具奈米結構pn接面方法，其中該超臨界流體選自二氧化碳超臨界流體。A nano-structure pn junction method is formed on the electroconductive thin film according to claim 6 of the patent application scope, wherein the supercritical fluid is selected from the group consisting of carbon dioxide supercritical fluids.
TW101102110A 2012-01-19 2012-01-19 Nano-structure pn junction forming on a conductive thin film and a method thereof TWI455867B (en)

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TW101102110A TWI455867B (en) 2012-01-19 2012-01-19 Nano-structure pn junction forming on a conductive thin film and a method thereof

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TWI455867B true TWI455867B (en) 2014-10-11

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200633277A (en) * 2005-03-15 2006-09-16 Commissariat Energie Atomique Method for producing a nanostructured pn junction light-emitting diode and diode obtained by such a method
US20080087919A1 (en) * 2006-10-08 2008-04-17 Tysoe Steven A Method for forming nitride crystals
TW201010094A (en) * 2008-08-29 2010-03-01 Univ Nat Taiwan Nano or micro-structured PN junction diode array thin-film solar cell and manufacturing method thereof
TW201144212A (en) * 2010-02-25 2011-12-16 Pinon Technologies Inc Group IV metal or semiconductor nanowire fabric

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200633277A (en) * 2005-03-15 2006-09-16 Commissariat Energie Atomique Method for producing a nanostructured pn junction light-emitting diode and diode obtained by such a method
US20080087919A1 (en) * 2006-10-08 2008-04-17 Tysoe Steven A Method for forming nitride crystals
TW201010094A (en) * 2008-08-29 2010-03-01 Univ Nat Taiwan Nano or micro-structured PN junction diode array thin-film solar cell and manufacturing method thereof
TW201144212A (en) * 2010-02-25 2011-12-16 Pinon Technologies Inc Group IV metal or semiconductor nanowire fabric

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