TWI447845B - Chuck table and method for unloading wafer using the same - Google Patents
Chuck table and method for unloading wafer using the same Download PDFInfo
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- TWI447845B TWI447845B TW099132342A TW99132342A TWI447845B TW I447845 B TWI447845 B TW I447845B TW 099132342 A TW099132342 A TW 099132342A TW 99132342 A TW99132342 A TW 99132342A TW I447845 B TWI447845 B TW I447845B
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Description
本發明係關於一種真空平台及晶圓卸載方法,尤係關於一種可在真空部與晶圓之間形成局部正壓的真空平台及晶圓卸載方法。The invention relates to a vacuum platform and a wafer unloading method, in particular to a vacuum platform and a wafer unloading method capable of forming a local positive pressure between a vacuum portion and a wafer.
近年來,伴隨著應用上的快速發展進步,半導體晶圓逐漸要求薄形化。超薄的半導體晶圓脆弱且容易產生歪曲而在使用上變得極為困難。In recent years, with the rapid development of applications, semiconductor wafers have gradually required thinning. Ultra-thin semiconductor wafers are fragile and prone to distortion and become extremely difficult to use.
一般而言,半導體晶圓係在其表面形成多數元件的處理後,在背部研磨處理步驟中從背面研削或研磨加工半導體晶圓而形成所需厚度。其後,在背部研磨處理步驟中切割為各元件。於半導體晶圓背面施以背部研磨處理後,將半導體晶圓放置於真空平台(chuck table),並將保護膠帶剝離。In general, a semiconductor wafer is processed by forming a plurality of elements on its surface, and the semiconductor wafer is ground or polished from the back side in a back grinding process to form a desired thickness. Thereafter, each element is cut in the back grinding treatment step. After the back grinding process is performed on the back surface of the semiconductor wafer, the semiconductor wafer is placed on a chuck table, and the protective tape is peeled off.
膠帶剝離後,真空平台與晶圓的接觸面由於真空吸附產生負壓。需要由真空平台進行吹氣以進行破真空(air blow),藉此以將晶圓與真空平台分離。由於真空平台與晶圓的接觸面之間的壓力劇烈改變,產生高應力,結果使得薄型化的半導體晶圓容易產生彎曲、折損的問題。After the tape is peeled off, the contact surface of the vacuum platform and the wafer generates a negative pressure due to vacuum adsorption. It is necessary to blow air from a vacuum platform for air blow, thereby separating the wafer from the vacuum platform. Since the pressure between the contact surface of the vacuum platform and the wafer is drastically changed, high stress is generated, and as a result, the thinned semiconductor wafer is liable to be bent and broken.
綜合上述,如何降低薄型化晶圓在卸載過程中彎曲、折損的問題是目前亟需努力的目標。In summary, how to reduce the problem of bending and breakage of a thinned wafer during unloading is an urgent task.
本發明係提供一種真空平台及晶圓卸載方法,其可在真空平台與晶圓之間形成局部正壓,進而減少晶圓彎折及破損之情形。The invention provides a vacuum platform and a wafer unloading method, which can form a local positive pressure between the vacuum platform and the wafer, thereby reducing the bending and breakage of the wafer.
依據本發明之一實施例,一種真空平台,包含一真空部,其用以產生一壓力差以吸引一晶圓,真空部具有複數個升降構件。每一升降構件具有複數個孔洞,其連接至一幫浦,並用以提供真空吸引力以吸引晶圓,其中每一升降構件可垂直移動,俾使晶圓自真空部剝離時,每一升降構件可依序朝垂直晶圓之方向移動並由孔洞吹風,使真空部與晶圓之間形成局部正壓。According to an embodiment of the invention, a vacuum platform includes a vacuum portion for generating a pressure difference to attract a wafer, and the vacuum portion has a plurality of lifting members. Each lifting member has a plurality of holes connected to a pump for providing a vacuum attractive force to attract the wafer, wherein each lifting member is vertically movable to lift the wafer from the vacuum portion, each lifting member It can be moved in the direction of the vertical wafer and blown by the holes to form a local positive pressure between the vacuum and the wafer.
依據本發明之另一實施例,一種晶圓卸載方法,包含下列步驟:以一真空平台吸引一晶圓,其中真空平台包含一真空部,用以產生一壓力差以吸引晶圓,真空部具有複數個升降構件,每一升降構件具有複數個孔洞,其連接至一幫浦以提供真空吸引力以吸引晶圓;以及每一升降構件依序朝垂直晶圓之方向移動,並由孔洞吹風,俾使真空部與晶圓之間形成局部正壓。According to another embodiment of the present invention, a wafer unloading method includes the steps of: attracting a wafer by a vacuum platform, wherein the vacuum platform includes a vacuum portion for generating a pressure difference to attract the wafer, and the vacuum portion has a plurality of lifting members, each lifting member having a plurality of holes connected to a pump to provide vacuum attraction to attract the wafer; and each lifting member sequentially moving toward the vertical wafer and being blown by the holes The local positive pressure is formed between the vacuum portion and the wafer.
本發明上述及其他態樣、特性及優勢可由附圖及實施例之說明而可更加了解。The above and other aspects, features and advantages of the present invention will become more apparent from the description of the appended claims.
請參照圖1a至1d,其為示意圖顯示本發明一實施例之真空平台及晶圓卸載方法。圖2為示意圖顯示本發明一較佳實施例之真空平台。請參照圖1a及圖2,真空平台1包含一真空部2,其用以產生一壓力差以吸引一晶圓3,真空部2具有複數個升降構件211、212、213,每一升降構件具有複數個孔洞22,其連接至一幫浦(圖中未示),並用以提供真空吸引力以吸引晶圓3。Please refer to FIGS. 1a to 1d, which are schematic diagrams showing a vacuum platform and a wafer unloading method according to an embodiment of the present invention. 2 is a schematic view showing a vacuum platform in accordance with a preferred embodiment of the present invention. Referring to FIG. 1a and FIG. 2, the vacuum platform 1 includes a vacuum portion 2 for generating a pressure difference to attract a wafer 3. The vacuum portion 2 has a plurality of lifting members 211, 212, 213, and each lifting member has A plurality of holes 22 are connected to a pump (not shown) for providing vacuum attraction to attract the wafer 3.
晶圓3經過研磨及黏貼(wafer mount)製程之中會貼附保護膠帶32(BG tape)以保護晶圓3正面於研磨過程中不被污染或損壞。在完成晶圓3研磨及黏貼製程之後,可將保護膠帶32剝離。在剝離保護膠帶32的過程中,晶圓3係以切割膠帶31黏貼並設置於真空平台1的真空部2。晶圓3可藉由一貼片環33(wafer ring)界定晶圓3與真空平台1之相對位置,並避免膠帶切割的皺摺與晶粒之相互碰撞。A protective tape 32 (BG tape) is attached to the wafer 3 during the wafer mounting process to protect the front side of the wafer 3 from contamination or damage during the grinding process. After the wafer 3 grinding and pasting process is completed, the protective tape 32 can be peeled off. In the process of peeling off the protective tape 32, the wafer 3 is adhered to the vacuum portion 2 of the vacuum stage 1 by the dicing tape 31. The wafer 3 can define the relative position of the wafer 3 to the vacuum platform 1 by a wafer ring 33 and avoid the collision between the wrinkles of the tape cutting and the crystal grains.
請參照圖2,其中真空部2為圓形,並且與晶圓3相對設置。三個升降構件211、212、213形成一同心圓,亦即升降構件211為一圓形,而升降構件212及213則為環狀。Referring to FIG. 2, the vacuum portion 2 is circular and disposed opposite to the wafer 3. The three lifting members 211, 212, 213 form a concentric circle, that is, the lifting member 211 has a circular shape, and the lifting members 212 and 213 are annular.
然而,升降構件的形狀並不以此為限,舉例而言,升降構件之形狀亦可為矩型等。However, the shape of the lifting member is not limited thereto. For example, the shape of the lifting member may be a rectangular shape or the like.
請繼續參照圖1b,當晶圓3自真空部2卸載時,每一升降構件可依序朝垂直晶圓3之方向移動,並由孔洞22吹風,真空部2與晶圓3之間形成局部正壓。由於真空部2與晶圓3之間僅局部形成正壓,亦即僅局部破真空,因此,晶圓3所受之應力較小,而減少彎折及破損之情形。此外,在此實施例中,由於真空部2與晶圓3破真空之處為中央,因此彎折程度較小並且較不易破損。其中,由孔洞22所吹拂之氣體一般而言為氮氣,其可由幫浦(圖中未示)加壓施入。Referring to FIG. 1b, when the wafer 3 is unloaded from the vacuum portion 2, each lifting member can be sequentially moved toward the vertical wafer 3, and blown by the holes 22, forming a local portion between the vacuum portion 2 and the wafer 3. Positive pressure. Since only a partial positive pressure is formed between the vacuum portion 2 and the wafer 3, that is, only a partial vacuum is broken, the stress on the wafer 3 is small, and the bending and breakage are reduced. Further, in this embodiment, since the vacuum portion 2 and the wafer 3 are centered at the vacuum, the degree of bending is small and is less likely to be broken. Among them, the gas blown by the hole 22 is generally nitrogen gas, which can be pressurized by a pump (not shown).
應註明的是,真空平台1與晶圓3的一般相對位置為如圖所示;亦即真空平台1與晶圓3為水平設置。此外考量真空平台1與晶圓3也可能為鉛直設置,而升降構件211之移動方向仍為晶圓3之垂直方向。It should be noted that the general relative position of the vacuum platform 1 and the wafer 3 is as shown in the figure; that is, the vacuum platform 1 and the wafer 3 are horizontally disposed. In addition, it is considered that the vacuum platform 1 and the wafer 3 may also be vertically disposed, and the moving direction of the lifting member 211 is still the vertical direction of the wafer 3.
請參照圖1c,如同前述,當晶圓3自真空部2卸載時,每一升降構件可依序朝垂直晶圓3之方向移動,並由孔洞22吹風,真空部2與晶圓3之間形成局部正壓。因此接著升降構件212為背向晶圓3方向向下沈降,並由孔洞22朝晶圓3方向吹風,真空部2與晶圓3之間形成局部正壓,並使真空部2與晶圓3之間局部破真空。在此實施例之中,每一升降構件係由內而外依序於垂直於晶圓3之方向移動。然而,可以理解的是其他順序,例如由外而內,亦為可行。如圖所示,首先是升降構件211朝垂直晶圓3之方向移動。Referring to FIG. 1c, as described above, when the wafer 3 is unloaded from the vacuum portion 2, each lifting member can be sequentially moved in the direction of the vertical wafer 3, and is blown by the holes 22, between the vacuum portion 2 and the wafer 3. A local positive pressure is formed. Therefore, the elevating member 212 then sinks downward toward the wafer 3, and is blown by the holes 22 toward the wafer 3, and a partial positive pressure is formed between the vacuum portion 2 and the wafer 3, and the vacuum portion 2 and the wafer 3 are formed. Partially breaking the vacuum between. In this embodiment, each of the lifting members is moved from the inside to the outside in a direction perpendicular to the wafer 3. However, it will be understood that other sequences, such as from the outside, are also possible. As shown, first, the elevating member 211 is moved in the direction of the vertical wafer 3.
請參照圖1d,如同前述,升降構件213可下降,並由孔洞22吹風,真空部2與晶圓3之間形成局部正壓,並使真空部2與晶圓3之間局部破真空。在晶圓3自真空平台1完成卸載後,可由機械手臂或是其他搬運裝置搬運晶圓3。Referring to FIG. 1d, as described above, the lifting member 213 can be lowered and blown by the hole 22, a partial positive pressure is formed between the vacuum portion 2 and the wafer 3, and a partial vacuum is broken between the vacuum portion 2 and the wafer 3. After the wafer 3 is unloaded from the vacuum platform 1, the wafer 3 can be handled by a robot arm or other handling device.
綜合上述,本發明藉由在真空平台上設置複數個升降構件,並使升降構件可依序移動,且搭配由孔洞朝晶圓方向吹風以於真空部與晶圓之間形成局部正壓,因而使得晶圓在卸載過程中所受之應力較小,而減少彎折及破損之情形。In summary, the present invention provides a plurality of lifting members on a vacuum platform, and the lifting members can be sequentially moved, and the air is blown from the holes toward the wafer to form a local positive pressure between the vacuum portion and the wafer. The stress on the wafer during the unloading process is small, and the bending and breakage are reduced.
以上所述之實施例僅是為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。The embodiments described above are only intended to illustrate the technical idea and the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.
1...真空平台1. . . Vacuum platform
2...真空部2. . . Vacuum department
211-213...升降構件211-213. . . Lifting member
22...孔洞twenty two. . . Hole
3...晶圓3. . . Wafer
31...切割膠帶31. . . Cutting tape
32...保護膠帶32. . . Protective tape
33...貼片環33. . . Patch ring
圖1a至1d為示意圖顯示本發明一實施例之真空平台及晶圓卸載方法。1a to 1d are schematic views showing a vacuum platform and a wafer unloading method according to an embodiment of the present invention.
圖2為示意圖顯示本發明一較佳實施例之真空平台。2 is a schematic view showing a vacuum platform in accordance with a preferred embodiment of the present invention.
211-213...升降構件211-213. . . Lifting member
3...晶圓3. . . Wafer
31...切割膠帶31. . . Cutting tape
33...貼片環33. . . Patch ring
Claims (10)
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TW099132342A TWI447845B (en) | 2010-09-24 | 2010-09-24 | Chuck table and method for unloading wafer using the same |
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TWI447845B true TWI447845B (en) | 2014-08-01 |
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Citations (3)
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US20020177288A1 (en) * | 1998-10-23 | 2002-11-28 | Brown Michael G. | Semiconductor device separation using a patterned laser projection |
US20030232581A1 (en) * | 2002-06-16 | 2003-12-18 | Soo-Jin Ki | Surface planarization equipment for use in the manufacturing of semiconductor devices |
US20050231886A1 (en) * | 2004-04-16 | 2005-10-20 | Innolux Display Corp. | Substrate attaching device and method |
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US20020177288A1 (en) * | 1998-10-23 | 2002-11-28 | Brown Michael G. | Semiconductor device separation using a patterned laser projection |
US20050003634A1 (en) * | 1998-10-23 | 2005-01-06 | Brown Michael G. | Semiconductor device separation using a patterned laser projection |
US20030232581A1 (en) * | 2002-06-16 | 2003-12-18 | Soo-Jin Ki | Surface planarization equipment for use in the manufacturing of semiconductor devices |
US20050231886A1 (en) * | 2004-04-16 | 2005-10-20 | Innolux Display Corp. | Substrate attaching device and method |
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