TWI425202B - Infrared lens penetration measurement device - Google Patents
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本發明係有關一種量測裝置，尤指一種紅外線透鏡穿透率量測裝置，其兼具可精準測出紅外線透鏡之穿透率與成本低等優點及功效。The invention relates to a measuring device, in particular to an infrared lens transmittance measuring device, which has the advantages and effects of accurately measuring the transmittance and low cost of the infrared lens.
隨著光電產業蓬勃發展，光學元件需求愈殷切，尤其在光學系統的輕量化、小型化與高精度化後，光學系統對光學元件加工與組裝(例如公差)的要求更嚴謹，因此對於光學元件的檢測日益重要。一般可見光光學元件穿透率檢測方式是採取光譜儀。至於紅外線光學元件(例如紅外線透鏡)因為是配合紅外線(在不可見光區，眼睛看不到)使用，無法利用可見光光學元件穿透率量測方法進行量測，而紅外線透鏡穿透率量測的人才相當缺乏，資源也比較少，相對提高量測困難度，且紅外線透鏡穿透率量測裝備也比較昂貴。With the rapid development of the optoelectronic industry, the demand for optical components is becoming more demanding, especially after the optical system is lighter, smaller, and more precise. The optical system requires stricter processing and assembly (such as tolerance) of optical components, so optical components are required. The detection is increasingly important. Generally, the visible light optical element transmittance detection method adopts a spectrometer. As for the infrared optical element (for example, an infrared lens), it is used in combination with infrared rays (invisible to the visible light, the eyes are not visible), and cannot be measured by the visible light optical element transmittance measurement method, and the infrared lens transmittance measurement is performed. Talents are quite scarce, resources are relatively small, relatively difficult to measure, and infrared lens penetration measurement equipment is also relatively expensive.
有鑑於此，必需研發出可解決上述習用缺點之技術。In view of this, it is necessary to develop a technique that can solve the above disadvantages.
本發明之目的，在於提供一種紅外線透鏡穿透率量測裝置，其兼具可精準測出紅外線透鏡之穿透率與成本低之功效。特別是，本發明所欲解決之問題包括：紅外線透鏡無法使用可見光透鏡之量測裝置檢測穿透率，以及紅外線透鏡穿透率之檢測設備昂貴等問題。An object of the present invention is to provide an infrared lens transmittance measuring device which can accurately measure the transmittance and low cost of an infrared lens. In particular, the problems to be solved by the present invention include the problem that the infrared lens cannot detect the transmittance using the measuring device of the visible light lens, and the detecting device of the infrared lens transmittance is expensive.
解決上述問題之技術手段係提供一種紅外線透鏡穿透率量測裝置，其包括：一紅外線發光部，係用以沿一虛擬光軸發出一第一紅外光線；一光線調整透鏡，係與該虛擬光軸同軸；一待測部，係具有一透光夾置部，其用以設置一待測紅外線透鏡，該待測紅外線透鏡係與該虛擬光軸同軸；一檢知器，係可於一第一檢測位置及一第二檢測位置之間移動，該第一、該第二檢測位置分別位於該待測紅外線透鏡之前與之後，且該第一檢測位置係位於該待測紅外線透鏡與該光線調整透鏡之間；一處理器，係連結該檢知器；且，該紅外線發光部與該光線調整透鏡之間具有一第一距離，該光線調整透鏡與該第一檢測位置之間具有一第二距離，該第一檢測位置與該待測紅外線透鏡之間具有一第三距離，該待測紅外線透鏡與該第二檢測位置之間具有一第四距離；該第一、該第二、該第三及該第四距離係相等，且皆等於2f ，其中f 同時為該光線調整透鏡與該待測紅外線透鏡之焦距；藉此，使該第一紅外光線穿過該光線調整透鏡後變成一第二紅外光線，並聚焦照射於該第一檢測位置上，且由第一檢測位置再擴散變成一第三紅外光線，而照射於該待測紅外線透鏡上，該第三紅外光線穿過該待測紅外線透鏡後變成一第四紅外光線，並聚焦照射於該第二檢測位置上；該檢知器係先後於該第一、該第二檢測位置上移動，而可分別接收該第二紅外光線之第二紅外光線最大光強度值及該第四紅外光線之第四紅外光線最大光強度值；該處理器用以將該第二紅外光線最大光強度值除以該第四紅外光線最大光強度值，而得到該待測紅外線透鏡之穿透率。The technical means for solving the above problems is to provide an infrared lens transmittance measuring device, comprising: an infrared light emitting portion for emitting a first infrared light along a virtual optical axis; and a light adjusting lens coupled to the virtual The optical axis is coaxial; a portion to be tested has a light-transmissive portion for setting an infrared lens to be tested, the infrared lens to be tested is coaxial with the virtual optical axis; Moving between the first detecting position and the second detecting position, the first detecting position and the second detecting position are respectively located before and after the infrared lens to be tested, and the first detecting position is located in the infrared lens to be tested and the light Adjusting between the lenses; a processor is coupled to the detector; and the infrared light emitting portion and the light adjusting lens have a first distance, and the light adjusting lens and the first detecting position have a first a second distance, the first detecting position and the infrared lens to be tested have a third distance, and the infrared lens to be tested and the second detecting position have a fourth distance; the first Second, the third and fourth lines at equal distances and are equal to 2 f, where f while the focal distance adjusting lens for light with a test of the infrared lens; thereby, that the first infrared light passes through the light beam Adjusting the lens to become a second infrared ray, and focusing the light on the first detecting position, and re-diffusing from the first detecting position to a third infrared ray, and irradiating the infrared lens to be tested, the third infrared The light passes through the infrared lens to be tested to become a fourth infrared light, and is focused and irradiated on the second detecting position; the detecting device moves on the first and second detecting positions, and can receive respectively a second infrared light maximum light intensity value of the second infrared light and a fourth infrared light maximum light intensity value of the fourth infrared light; the processor is configured to divide the second infrared light maximum light intensity value by the fourth infrared The maximum light intensity value of the light is obtained, and the transmittance of the infrared lens to be tested is obtained.
本發明之上述目的與優點，不難從下述所選用實施例之詳細說明與附圖中，獲得深入瞭解。The above objects and advantages of the present invention will be readily understood from the following detailed description of the preferred embodiments illustrated herein.
茲以下列實施例並配合圖式詳細說明本發明於後：The invention will be described in detail in the following examples in conjunction with the drawings:
本發明係為一種紅外線透鏡穿透率量測裝置，參閱第一、第二及第六圖，其包括：一紅外線發光部10，係用以沿一虛擬光軸X發出一第一紅外光線L1；一光線調整透鏡20，係與該虛擬光軸X同軸；一待測部30，係具有一透光夾置部31，其用以設置一待測紅外線透鏡91，該待測紅外線透鏡91係與該虛擬光軸X同軸；一檢知器40，係可於一第一檢測位置P1及一第二檢測位置P2之間移動，該第一、該第二檢測位置P1與P2分別位於該待測紅外線透鏡91之前與之後，且該第一檢測位置P1係位於該待測紅外線透鏡91與該光線調整透鏡20之間；一處理器53，係連結該檢知器40；且，該紅外線發光部10與該光線調整透鏡20之間具有一第一距離D1，該光線調整透鏡20與該第一檢測位置P1之間具有一第二距離D2，該第一檢測位置P1與該待測紅外線透鏡91之間具有一第三距離D3，該待測紅外線透鏡91與該第二檢測位置P2之間具有一第四距離D4；該第一、該第二、該第三及該第四距離D1、D2、D3與D4係相等，且皆等於2f ，其中f 同時為該光線調整透鏡20與該待測紅外線透鏡91之焦距；藉此，使該第一紅外光線L1穿過該光線調整透鏡20後變成一第二紅外光線L2，並聚焦照射於該第一檢測位置P1上，且由第一檢測位置P1再擴散變成一第三紅外光線L3，而照射於該待測紅外線透鏡91上，該第三紅外光線L3穿過該待測紅外線透鏡91後變成一第四紅外光線L4，並聚焦照射於該第二檢測位置P2上；該檢知器40係先後於該第一、該第二檢測位置P1與P2上移動，而可分別接收該第二紅外光線L2之第二紅外光線最大光強度值Q1及該第四紅外光線L4之第四紅外光線最大光強度值Q2；該處理器53用以將該第二紅外光線最大光強度值Q1除以該第四紅外光線最大光強度值Q2，而得到該待測紅外線透鏡91之穿透率。The present invention is an infrared lens transmittance measuring device. Referring to the first, second and sixth figures, the invention comprises an infrared light emitting portion 10 for emitting a first infrared light L1 along a virtual optical axis X. A light-adjusting lens 20 is coaxial with the virtual optical axis X; a portion to be tested 30 has a light-transmissive sandwiching portion 31 for arranging an infrared lens 91 to be tested, and the infrared lens 91 to be tested Coaxial with the virtual optical axis X; a detector 40 is movable between a first detecting position P1 and a second detecting position P2, wherein the first and second detecting positions P1 and P2 are respectively located Before and after the infrared lens 91 is measured, the first detecting position P1 is located between the infrared lens 91 to be tested and the light adjusting lens 20; a processor 53 is coupled to the detector 40; and the infrared light is emitted A first distance D1 is formed between the light-adjusting lens 20 and the first detecting position P1, and the first detecting position P1 and the infrared lens to be tested are There is a third distance D3 between 91, and the infrared infrared to be tested is transparent. Has a fourth distance D4 between the second 91 and the detection position P2; the first, the second, the third and the fourth distance D1, D2, D3 and D4 based equal and are equal to 2 f, wherein f is the focal length of the light adjusting lens 20 and the infrared lens 91 to be tested; thereby, the first infrared light L1 is passed through the light adjusting lens 20 to become a second infrared light L2, and the light is focused on the first a detection position P1, and re-diffusion from the first detection position P1 to a third infrared ray L3, and irradiated onto the infrared lens 91 to be tested, the third infrared ray L3 passes through the infrared lens 91 to be tested and becomes a fourth infrared ray L4, and is focused on the second detecting position P2; the detector 40 is sequentially moved on the first and second detecting positions P1 and P2, and the second infrared is respectively received a second infrared light maximum light intensity value Q1 of the light L2 and a fourth infrared light maximum light intensity value Q2 of the fourth infrared light L4; the processor 53 is configured to divide the second infrared light maximum light intensity value Q1 by the The fourth infrared light has a maximum light intensity value Q2, and the red color to be measured is obtained. The penetration rate of the outer lens 91.
實務上，該紅外線發光部10可為紅外線點光源。In practice, the infrared light emitting unit 10 can be an infrared point light source.
該檢知器40可為熱電堆檢知器。The detector 40 can be a thermopile detector.
該待測紅外線透鏡91可為藍寶石、矽、壓克力其中之一種結構。The infrared lens 91 to be tested may be one of sapphire, samarium, and acrylic.
本發明之紅外線透鏡穿透率量測裝置可再包括：The infrared lens transmittance measuring device of the present invention may further comprise:
[a] 一控制裝置50，係設有：一放大器51，係用以對該第二、該第四紅外光線最大光強度值Q1與Q2作信號進行放大作業；一類比/數位轉換器52，係用以將該第二、該第四紅外光線最大光強度值Q1與Q2由類比訊號轉為數位訊號；該處理器53，可為8051單晶片處理器或具有相同功能的單晶片處理器，並以該第二紅外光線最大光強度值Q1除以該第四紅外光線最大光強度值Q2而算出該待測紅外線透鏡91之穿透率。[a] A control device 50 is provided with an amplifier 51 for amplifying the second and fourth infrared light maximum light intensity values Q1 and Q2; an analog/digital converter 52, The second and fourth infrared light maximum light intensity values Q1 and Q2 are converted from analog signals to digital signals; the processor 53 can be an 8051 single-chip processor or a single-chip processor with the same function. The transmittance of the infrared lens 91 to be tested is calculated by dividing the second infrared light maximum light intensity value Q1 by the fourth infrared light maximum light intensity value Q2.
[b] 一移動裝置60，係包括：一第一基座61；一第二基座62，係可於該第一基座61上移動；一承載部63，係用以連結該檢知部40；並可於該第二基座62上移動；而可使該檢知部40沿X、Y軸移動調整。[b] a mobile device 60, comprising: a first base 61; a second base 62 movable on the first base 61; a carrying portion 63 for connecting the detecting portion 40; and can move on the second base 62; and the detecting portion 40 can be moved and adjusted along the X and Y axes.
[c] 一顯示器70，係與該處理器53相互連結，而可用以顯示該處理器53所得到之該待測紅外線透鏡91之穿透率。[c] A display 70 is coupled to the processor 53 and can be used to display the transmittance of the infrared lens 91 to be tested obtained by the processor 53.
本發明之實際使用方式係如下所述：參閱第一及第三A圖，首先，將該檢知器40設於第一檢測位置P1，接著啟動該紅外線發光部10，使其沿虛擬光軸X發出第一紅外光線L1，該第一紅外光線L1係擴散照射於該光線調整透鏡20上，並穿透該光線調整透鏡20而變成一第二紅外光線L2，該第二紅外光線L2係聚焦照射於位在第一檢測位置P1上的檢知器40，此時將檢知器40在移動裝置60上進行調整(假設如第四圖所示，先調整至該虛擬光軸X上，再如第五圖所示，進一步在虛擬光軸X上的至少第一位置A1、第二位置A2與第三位置A3間移動，並可能在第一位置P1得到第二紅外光線最大光強度值Q1)，使其得到未穿透待測紅外線透鏡91之第二紅外光線L2的第二紅外光線最大光強度值Q1(假設在照射過程有損耗，而為90單位)，並傳送至該控制裝置50以進行放大、類比/數位等信號處理作業(參閱第六圖)。The actual use of the present invention is as follows: Referring to the first and third A diagrams, first, the detector 40 is disposed at the first detection position P1, and then the infrared light-emitting portion 10 is activated to be along the virtual optical axis. X emits a first infrared ray L1, and the first infrared ray L1 diffuses and illuminates the illuminating lens 20, and penetrates the ray adjusting lens 20 to become a second infrared ray L2, and the second infrared ray L2 is focused. The detector 40 is irradiated on the first detecting position P1, and the detector 40 is adjusted on the moving device 60 (assuming that the virtual optical axis X is first adjusted as shown in the fourth figure, and then As shown in the fifth figure, further moving between at least the first position A1, the second position A2 and the third position A3 on the virtual optical axis X, and possibly obtaining the second infrared light maximum light intensity value Q1 at the first position P1 ), obtaining a second infrared ray maximum light intensity value Q1 that does not penetrate the second infrared ray L2 of the infrared lens 91 to be tested (assuming 90 watts in the irradiation process), and transmitting to the control device 50 For signal processing operations such as amplification, analog/digital, etc. Figure VI).
再如第二及第三B圖所示，將該檢知器40由第一檢測位置P1移至第二檢測位置P2，且實際上該第二紅外光線L2聚焦於第一位置P1時，亦會變成第三紅外光線L3而擴散照射於待測紅外線透鏡91上，且會穿透該待測紅外線透鏡91變成第四紅外光線L4而照射於第二位置P2，此時依前述調整過程，使檢知器40可得到穿透該待測紅外線透鏡91後之第四紅外光線L4的第四紅外光線最大光強度值Q2(假設為85單位)，同樣傳送至該控制裝置50以進行放大、類比/數位等信號處理作業，之後以第二紅外光線最大光強度值Q1(90單位)除以第四紅外光線最大光強度值Q2(85單位)，即得到該待測紅外線透鏡91之穿透率(1.059%)，該待測紅外線透鏡91隨材質不同，而會有不同的穿透率。As shown in the second and third B diagrams, the detector 40 is moved from the first detecting position P1 to the second detecting position P2, and when the second infrared light L2 is actually focused on the first position P1, It will become the third infrared ray L3 and diffusely illuminate the infrared lens 91 to be tested, and will penetrate the infrared ray lens 91 to be converted into the fourth infrared ray L4 and illuminate the second position P2. The detector 40 can obtain a fourth infrared ray maximum light intensity value Q2 (assumed to be 85 units) that penetrates the fourth infrared ray L4 after the infrared lens 91 to be tested, and is also transmitted to the control device 50 for amplification and analogy. / Digital signal processing operation, and then the second infrared light maximum light intensity value Q1 (90 units) divided by the fourth infrared light maximum light intensity value Q2 (85 units), that is, the penetration rate of the infrared lens 91 to be tested is obtained (1.059%), the infrared lens 91 to be tested has different transmittances depending on the material.
紅外光線可分為近紅外線(700~2000nm)、中紅外線(3000~5000nm)與遠紅外線(8000~14000nm)。假設待測紅外線透鏡91分別為藍寶石、矽與壓克力材質，欲知檢測紅外光線之穿透率(也可以講是工作範圍W)的準確性，可分別參閱第七、第八與第九圖。Infrared light can be divided into near infrared (700~2000nm), medium infrared (3000~5000nm) and far infrared (8000~14000nm). Assume that the infrared lenses 91 to be tested are sapphire, samarium and acrylic materials respectively. For the accuracy of detecting the penetration rate of infrared light (also referred to as the working range W), refer to the seventh, eighth and ninth respectively. Figure.
當然，該紅外線發光部10係可調整發光強弱，而可量取該待測紅外線透鏡91在不同強弱之光線照射下的穿透率，以進一步測出何種光強度之光線照射該待測紅外線透鏡91，能得到最大的穿透率，此測試過程與裝置不脫本發明之保護範疇。Of course, the infrared illuminating portion 10 can adjust the intensity of the illuminating light, and can measure the transmittance of the infrared lens 91 to be tested under different light intensity to further measure which light intensity illuminates the infrared ray to be tested. The lens 91 provides maximum penetration, and the test procedure and apparatus do not depart from the scope of protection of the present invention.
本發明之優點及功效可歸納如下：The advantages and effects of the present invention can be summarized as follows:
[1] 可精準測出紅外線透鏡之穿透率。本發明設置紅外線發光部、光線調整透鏡、供檢知器放置的第一位置、待測紅外線透鏡與供檢知器放置的第二位置，前述元件(或位置)兩兩間之焦距均為2f ，使檢知器可分別在第一、第二位置得到紅外光線穿透待測紅外線透鏡之前與之後的第二紅外光線最大光強度值與第四紅外光線最大光強度值，只要將第二紅外光線最大光強度值除以第四紅外光線最大光強度值，即得到待測紅外線透鏡之穿透率，相當精準(穿透率量測重覆性精度可達5%)。[1] The penetration rate of the infrared lens can be accurately measured. The invention provides an infrared illuminating part, a light adjusting lens, a first position for the detector to be placed, a second lens to be tested and a second position for the detector to be placed, and the focal length of the two components (or positions) is 2 f , so that the detector can obtain the maximum infrared light intensity value and the fourth infrared light maximum light intensity value before and after the infrared light penetrates the infrared lens to be tested, respectively, in the first and second positions, as long as the second light source The maximum light intensity value of the infrared light is divided by the maximum light intensity value of the fourth infrared light, that is, the transmittance of the infrared lens to be tested is obtained, which is quite accurate (the repeatability measurement has a repeatability of 5%).
[2] 成本低。本發明僅設置紅外線發光部、光線調整透鏡、檢知器(公知熱電堆檢知器)與處理器(例如為8051微處理器)，全為公知結構，故，成本相當低。[2] Low cost. The present invention is provided with only an infrared light-emitting portion, a light-adjusting lens, a detector (a well-known thermopile detector), and a processor (for example, an 8051 microprocessor), all of which are well-known structures, and therefore, the cost is relatively low.
以上僅是藉由較佳實施例詳細說明本發明，對於該實施例所做的任何簡單修改與變化，皆不脫離本發明之精神與範圍。The present invention has been described in detail with reference to the preferred embodiments of the present invention, without departing from the spirit and scope of the invention.
由以上詳細說明，可使熟知本項技藝者明瞭本發明的確可達成前述目的，實已符合專利法之規定，爰提出發明專利申請。From the above detailed description, it will be apparent to those skilled in the art that the present invention can achieve the foregoing objects, and the invention has been in accordance with the provisions of the patent law.
10．．．紅外線發光部10. . . Infrared light emitting unit
20．．．光線調整透鏡20. . . Light adjustment lens
30．．．待測部30. . . Part to be tested
31．．．透光夾置部31. . . Light-transmissive sandwich
40．．．檢知器40. . . Detector
50．．．控制裝置50. . . Control device
51．．．放大器51. . . Amplifier
52．．．類比/數位轉換器52. . . Analog/digital converter
53．．．處理器53. . . processor
60．．．移動裝置60. . . Mobile device
61．．．第一基座61. . . First base
62．．．第二基座62. . . Second base
63．．．承載部63. . . Carrying part
70．．．顯示器70. . . monitor
91．．．待測紅外線透鏡91. . . Infrared lens to be tested
X．．．虛擬光軸X. . . Virtual optical axis
P1．．．第一檢測位置P1. . . First detection position
P2．．．第二檢測位置P2. . . Second detection position
D1．．．第一距離D1. . . First distance
D2．．．第二距離D2. . . Second distance
D3．．．第三距離D3. . . Third distance
D4．．．第四距離D4. . . Fourth distance
L1．．．第一紅外光線L1. . . First infrared light
L2．．．第二紅外光線L2. . . Second infrared light
L3．．．第三紅外光線L3. . . Third infrared light
L4．．．第四紅外光線L4. . . Fourth infrared light
A1．．．第一位置A1. . . First position
A2．．．第二位置A2. . . Second position
A3．．．第三位置A3. . . Third position
W．．．工作範圍W. . . The scope of work
Q1．．．第二紅外光線最大光強度值Q1. . . Second infrared light maximum light intensity value
Q2．．．第四紅外光線最大光強度值Q2. . . Fourth infrared light maximum light intensity value
第一圖係本發明之第一量測應用例之示意圖The first figure is a schematic diagram of a first measurement application example of the present invention.
第二圖係本發明之第二量測應用例之示意圖The second figure is a schematic diagram of a second measurement application example of the present invention.
第三A及第三B圖係分別為本發明之第一與第二種應用例之其他角度之示意圖The third and third B drawings are respectively schematic diagrams of other angles of the first and second application examples of the present invention.
第四圖係本發明之檢知器之第一種調整過程之示意圖The fourth figure is a schematic diagram of the first adjustment process of the detector of the present invention.
第五圖係本發明之檢知器之第二種調整過程之示意圖The fifth figure is a schematic diagram of the second adjustment process of the detector of the present invention.
第六圖係本發明之方塊圖Figure 6 is a block diagram of the present invention
第七圖係本發明之待測紅外線透鏡為藍寶石之波長與穿透率之曲線圖The seventh figure is a graph of the wavelength and transmittance of the sapphire in the infrared lens to be tested according to the present invention.
第八圖係本發明之待測紅外線透鏡為矽之波長與穿透率之曲線圖The eighth figure is a graph of the wavelength and transmittance of the infrared lens to be tested according to the present invention.
第九圖係本發明之待測紅外線透鏡為壓克力之波長與穿透率之曲線圖The ninth graph is a graph of the wavelength and transmittance of the infrared lens to be tested according to the present invention.
10．．．紅外線發光部10. . . Infrared light emitting unit
20．．．光線調整透鏡20. . . Light adjustment lens
30．．．待測部30. . . Part to be tested
31．．．透光夾置部31. . . Light-transmissive sandwich
40．．．檢知器40. . . Detector
50．．．控制裝置50. . . Control device
51．．．放大器51. . . Amplifier
52．．．類比/數位轉換器52. . . Analog/digital converter
53．．．處理器53. . . processor
60．．．移動裝置60. . . Mobile device
61．．．第一基座61. . . First base
62．．．第二基座62. . . Second base
63．．．承載部63. . . Carrying part
70．．．顯示器70. . . monitor
91．．．待測紅外線透鏡91. . . Infrared lens to be tested
X．．．虛擬光軸X. . . Virtual optical axis
P1．．．第一檢測位置P1. . . First detection position
P2．．．第二檢測位置P2. . . Second detection position
D1．．．第一距離D1. . . First distance
D2．．．第二距離D2. . . Second distance
D3．．．第三距離D3. . . Third distance
D4．．．第四距離D4. . . Fourth distance
L1．．．第一紅外光線L1. . . First infrared light
L2．．．第二紅外光線L2. . . Second infrared light
L3．．．第三紅外光線L3. . . Third infrared light
L4．．．第四紅外光線L4. . . Fourth infrared light
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99124107A TWI425202B (en) | 2010-07-22 | 2010-07-22 | Infrared lens penetration measurement device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99124107A TWI425202B (en) | 2010-07-22 | 2010-07-22 | Infrared lens penetration measurement device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201205063A TW201205063A (en) | 2012-02-01 |
| TWI425202B true TWI425202B (en) | 2014-02-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN107688275B (en) * | 2016-08-06 | 2023-10-13 | 深圳光峰科技股份有限公司 | Lighting device and display system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10239236A (en) * | 1997-02-25 | 1998-09-11 | Nikon Corp | Inspection apparatus for homogeneity of optical material |
| US20080186493A1 (en) * | 1997-05-05 | 2008-08-07 | Chemometec A/S | method and a system for determination of particles in a liquid sample |
| US20080212071A1 (en) * | 2003-04-15 | 2008-09-04 | Optiscan Biomedical Corporation | Method of determining analyte concentration in a sample using infrared transmission data |
| TW201005276A (en) * | 2008-07-24 | 2010-02-01 | Univ Nat Formosa | Three-dimensional infrared spectrum measurement method and system |
| TWM375217U (en) * | 2009-08-24 | 2010-03-01 | Univ China Sci & Tech | Measuring device for back focal length of infrared lens |
-
2010
- 2010-07-22 TW TW99124107A patent/TWI425202B/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10239236A (en) * | 1997-02-25 | 1998-09-11 | Nikon Corp | Inspection apparatus for homogeneity of optical material |
| US20080186493A1 (en) * | 1997-05-05 | 2008-08-07 | Chemometec A/S | method and a system for determination of particles in a liquid sample |
| US20080212071A1 (en) * | 2003-04-15 | 2008-09-04 | Optiscan Biomedical Corporation | Method of determining analyte concentration in a sample using infrared transmission data |
| TW201005276A (en) * | 2008-07-24 | 2010-02-01 | Univ Nat Formosa | Three-dimensional infrared spectrum measurement method and system |
| TWM375217U (en) * | 2009-08-24 | 2010-03-01 | Univ China Sci & Tech | Measuring device for back focal length of infrared lens |
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