TWI415711B - Polishing pad with floating elements and method of making and using the same - Google Patents

Polishing pad with floating elements and method of making and using the same Download PDF

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Publication number
TWI415711B
TWI415711B TW098124300A TW98124300A TWI415711B TW I415711 B TWI415711 B TW I415711B TW 098124300 A TW098124300 A TW 098124300A TW 98124300 A TW98124300 A TW 98124300A TW I415711 B TWI415711 B TW I415711B
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Taiwan
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abrasive
polishing pad
elements
support layer
abrasive elements
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TW098124300A
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Chinese (zh)
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TW201006606A (en
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William Dale Joseph
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3M Innovative Properties Co
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D13/00Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
    • B24D13/14Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The disclosure is directed to polishing pads with floating polishing elements bonded to a support layer, for example by thermal bonding, and to methods of making and using such pads in a polishing process. In one exemplary embodiment, the polishing pad includes a multiplicity of polishing elements, at least some of which may be porous, each polishing element affixed to a major surface of a support layer so as to restrict lateral movement of the polishing elements with respect to one or more of the other polishing elements, but remaining moveable in an axis substantially normal to the support layer. In certain embodiments, the polishing pad may additionally include a compliant layer affixed to the support layer opposite the polishing elements, and optionally, a polishing composition distribution layer. In some embodiments using porous polishing elements, the pores are distributed substantially at a polishing surface of the polishing elements.

Description

具有浮動元件之研磨墊,及其製造與使用方法Abrasive pad with floating element, and method of making and using same

本發明係關於具有浮動研磨元件之研磨墊,且係關於製造此等研磨墊並在一研磨製程中(例如,在一化學機械平坦化製程中)使用此等研磨墊之方法。This invention relates to polishing pads having floating abrasive elements and to methods of making such polishing pads and using such polishing pads in a polishing process (e.g., in a chemical mechanical planarization process).

在半導體器件及積體電路之製造期間,矽晶圓透過一系列沈積及蝕刻步驟經反覆處理以形成上覆材料層及器件結構。可使用稱為化學機械平坦化(CMP)之一研磨技術來移除在該等沈積及蝕刻步驟後剩餘之表面不規則物(諸如凸塊、不等高程之區、槽及溝),其目的係獲得無劃痕或坑(稱為凹陷)之一平滑晶圓表面,其中跨越晶圓表面具有高度均勻度。During fabrication of semiconductor devices and integrated circuits, germanium wafers are processed through a series of deposition and etching steps to form overlying material layers and device structures. One of the chemical polishing techniques known as chemical mechanical planarization (CMP) may be used to remove surface irregularities (such as bumps, unequal elevation regions, trenches, and trenches) remaining after the deposition and etching steps, for purposes A smooth wafer surface is obtained without scratches or pits (referred to as depressions) with a high degree of uniformity across the wafer surface.

在一典型CMP研磨製程中,在存在通常係在水及/或一蝕刻化學品中之磨料粒子之一漿液之一工作液體之情形下將諸如一晶圓之一基板壓在一研磨墊上且相對於其相對移動該基板。已於(例如)美國專利第5,257,478號、第5,921,855號、第6,126,532號、第6,899,598 B2號及第7,267,610號中揭示了供與磨料漿液一起使用之各種CMP研磨墊。如美國專利第6,908,366 B2號所例示,亦已知固定磨料研磨墊,其中磨料粒子一般而言通常以自墊表面延伸之經精確成形之磨料複合材料之形式固定至墊表面。最近,在WO/2006057714中描述了一種研磨墊,其具有自一可壓縮下伏層延伸且藉由一導向板固定至該下伏層之多個研磨元件。儘管已知且使用了各種各樣的研磨墊,但本技術繼續尋找用於CMP之新穎且經改良之研磨墊,尤其在其中正使用較大晶粒直徑或其中需要較高位準之晶圓表面扁平度及研磨均勻度之CMP製程中。In a typical CMP polishing process, a substrate such as a wafer is pressed onto a polishing pad in the presence of a working liquid which is typically one of the abrasive particles in water and/or an etch chemistry. The substrate is moved relative to it. Various CMP polishing pads for use with abrasive slurries are disclosed in, for example, U.S. Patent Nos. 5,257,478, 5,921,855, 6, 126, 532, 6, 899, 598 B2, and 7, 267, 610. Fixed abrasive polishing pads are also known as exemplified in U.S. Patent No. 6,908,366 B2, in which abrasive particles are generally generally secured to the surface of the pad in the form of a precisely shaped abrasive composite extending from the surface of the pad. More recently, in WO/2006057714 a polishing pad has been described having a plurality of abrasive elements extending from a compressible underlayer and secured to the underlying layer by a guide plate. Although a wide variety of polishing pads are known and used, the present technology continues to find new and improved polishing pads for CMP, particularly where larger grain diameters or wafer surfaces requiring higher levels are being used. Flatness and uniformity of polishing in the CMP process.

在一個示範性實施例中,本發明描述一種研磨墊,其包括複數個研磨元件,該等研磨元件中之每一者均接合至一支撐層以限制該等研磨元件相對於該等其他研磨元件中之一者或多者之橫向移動,但保持可沿垂直於該等研磨元件之一研磨表面之一軸線移動。在某些示範性實施例中,該等研磨元件係熱接合至該支撐層。在某些示範性實施例中,該等研磨元件中之至少一部分包括多孔研磨元件,且在額外實施例中,每一多孔研磨元件之至少一表面包括複數個孔。In one exemplary embodiment, the invention features a polishing pad that includes a plurality of abrasive elements, each of which is bonded to a support layer to limit the abrasive elements relative to the other abrasive elements One or more of the lateral movements, but remaining movable along an axis perpendicular to one of the abrasive surfaces of the abrasive elements. In certain exemplary embodiments, the abrasive elements are thermally bonded to the support layer. In certain exemplary embodiments, at least a portion of the abrasive elements comprise porous abrasive elements, and in additional embodiments, at least one surface of each of the porous abrasive elements comprises a plurality of apertures.

在多孔研磨元件之某些特定實施例中,該等孔可大致分佈於整個多孔研磨元件上。在多孔研磨元件之其他特定實施例中,該等孔可大致分佈於該元件之研磨表面上。在某些示範性實施例中,大致分佈於該元件之研磨表面上之該等孔包括具有選自由以下組成之群組之一橫截面形狀之複數個通道:圓柱形、三角形、矩形、梯形、半球形及其組合。In certain particular embodiments of the porous abrasive element, the apertures can be distributed substantially throughout the porous abrasive element. In other particular embodiments of the porous abrasive element, the holes may be distributed substantially over the abrasive surface of the element. In certain exemplary embodiments, the holes substantially distributed over the abrasive surface of the element comprise a plurality of channels having a cross-sectional shape selected from the group consisting of: cylindrical, triangular, rectangular, trapezoidal, Hemispheres and combinations thereof.

在另一示範性實施例中,本發明描述一種研磨墊,其包括:一支撐層,其具有一第一主側及與該第一主側相對之一第二主側;及複數個研磨元件,其固定至該支撐層之該第一主側,其中該等研磨元件沿大致垂直於該第一主側之一第一方向自該支撐層之該第一主側延伸。在某些示範性實施例中,該等研磨元件係熱接合至該支撐層。在某些示範性實施例中,該等研磨元件之至少一部分包括多孔研磨元件,且在額外實施例中,每一多孔研磨元件之至少一個表面包括複數個孔。In another exemplary embodiment, the present invention describes a polishing pad comprising: a support layer having a first major side and a second major side opposite the first major side; and a plurality of abrasive elements Attached to the first major side of the support layer, wherein the abrasive elements extend from the first major side of the support layer in a first direction that is substantially perpendicular to the first major side. In certain exemplary embodiments, the abrasive elements are thermally bonded to the support layer. In certain exemplary embodiments, at least a portion of the abrasive elements comprise porous abrasive elements, and in additional embodiments, at least one surface of each of the porous abrasive elements comprises a plurality of apertures.

在多孔研磨元件之某些特定實施例中,該等孔可大致分佈於整個多孔研磨元件上。在其他特定實施例中,該等孔可大致分佈於該等元件之研磨表面處。在某些特定示範性實施例中,大致分佈於該元件之研磨表面處之該等孔包括具有選自由以下組成之群組之一橫截面形狀之複數個通道:圓柱形、三角形、矩形、梯形、半球形及其組合。In certain particular embodiments of the porous abrasive element, the apertures can be distributed substantially throughout the porous abrasive element. In other particular embodiments, the holes may be distributed substantially at the abrasive surface of the elements. In certain particular exemplary embodiments, the holes substantially distributed at the abrasive surface of the element comprise a plurality of channels having a cross-sectional shape selected from the group consisting of: cylindrical, triangular, rectangular, trapezoidal , hemispheres and combinations thereof.

在一進一步示範性實施例中,提供一種製造一研磨墊之方法,該方法包括形成複數個多孔研磨元件,及將該等研磨元件接合至一支撐層。在某些示範性實施例中,將該等研磨元件接合至該支撐層包括熱接合、光化輻射接合、黏合劑接合及其組合。In a further exemplary embodiment, a method of making a polishing pad is provided, the method comprising forming a plurality of porous abrasive elements, and joining the abrasive elements to a support layer. In certain exemplary embodiments, joining the abrasive elements to the support layer includes thermal bonding, actinic radiation bonding, adhesive bonding, and combinations thereof.

在某些示範性實施例中,該方法進一步包括在將該等研磨元件接合至該支撐層之前將該複數個研磨元件配置成一圖案。在某些示範性實施例中,將複數個研磨元件配置成一圖案包括將該等研磨元件配置於一模板中、將該等研磨元件配置於該支撐層上,及其組合。在某些實施例中,該等研磨元件之至少一部分包括多孔研磨元件。在某些額外實施例中,該等研磨元件之至少一部分包括大致無孔研磨元件。In certain exemplary embodiments, the method further includes configuring the plurality of abrasive elements into a pattern prior to joining the abrasive elements to the support layer. In certain exemplary embodiments, configuring the plurality of abrasive elements in a pattern includes disposing the abrasive elements in a template, disposing the abrasive elements on the support layer, and combinations thereof. In certain embodiments, at least a portion of the abrasive elements comprise a porous abrasive element. In certain additional embodiments, at least a portion of the abrasive elements comprise substantially non-porous abrasive elements.

在某些特定示範性實施例中,該方法包含藉由以下步驟形成多孔研磨元件:注射模製一氣體飽和聚合物熔體、注射模製在反應時放出一氣體以形成一聚合物之一反應性混合物、注射模製包括溶解於一超臨界氣體中之一聚合物之一混合物、注射模製在一溶劑中不相容之聚合物之一混合物、注射模製分散於一熱塑性聚合物中之多孔熱固微粒及其組合。In certain particular exemplary embodiments, the method includes forming a porous abrasive element by injection molding a gas-saturated polymer melt, and injection molding to emit a gas during the reaction to form a polymer reaction. The mixture, injection molding comprises a mixture of one of the polymers dissolved in a supercritical gas, a mixture of one of the incompatible polymers by injection molding in a solvent, and injection molding dispersed in a thermoplastic polymer. Porous thermoset particles and combinations thereof.

在一額外示範性實施例中,本發明係針對一種在一研磨製程中使用如上文所述之一研磨墊之方法,該方法包括使一基板之一表面與包括熱接合至一支撐層之複數個研磨元件之一研磨墊之一研磨表面接觸,及使該研磨墊相對於該基板相對移動以磨蝕該基板之該表面。在某些示範性實施例中,該等研磨元件之至少一部分包括多孔研磨元件,且在某些實施例中,每一多孔研磨元件之至少一個表面包括複數個孔。在其他示範性實施中,可向研磨墊表面與基板表面之間的一界面提供一工作液體。In an additional exemplary embodiment, the present invention is directed to a method of using a polishing pad as described above in a polishing process, the method comprising: bonding a surface of a substrate to a plurality including thermally bonding to a support layer One of the polishing elements is in contact with one of the polishing pads, and the polishing pad is moved relative to the substrate to abrade the surface of the substrate. In certain exemplary embodiments, at least a portion of the abrasive elements comprise a porous abrasive element, and in certain embodiments, at least one surface of each porous abrasive element includes a plurality of apertures. In other exemplary implementations, a working fluid can be provided to an interface between the surface of the polishing pad and the surface of the substrate.

具有根據本發明之多孔研磨元件之研磨墊之示範性實施例具有能夠使其用於多種研磨應用中之各種特徵及特性。在某些目前較佳之實施例中,本發明之研磨墊可尤其適於用於製造積體電路及半導體器件中之晶圓之化學機械平坦化(CMP)。在某些示範性實施例中,此發明中所述之研磨墊可提供某些或所有以下優點。An exemplary embodiment of a polishing pad having a porous abrasive element in accordance with the present invention has various features and characteristics that enable it to be used in a variety of abrasive applications. In certain presently preferred embodiments, the polishing pads of the present invention are particularly suitable for use in the fabrication of integrated circuits and chemical mechanical planarization (CMP) of wafers in semiconductor devices. In certain exemplary embodiments, the polishing pads described in this invention may provide some or all of the following advantages.

舉例而言,在某些示範性實施中,根據本發明之一研磨墊可用於將在CMP製程中所使用之一工作液體更好地保留持在該墊之研磨表面與正研磨之基板表面之間的界面處,藉此改良該工作液體在增強研磨中之效率。在其他示範性實施例中,根據本發明之一研磨墊可減少或消除晶圓表面在研磨期間之凹陷及/或邊緣腐蝕。For example, in certain exemplary implementations, a polishing pad in accordance with the present invention can be used to better retain one of the working fluids used in the CMP process on the abrasive surface of the pad and the surface of the substrate being ground. At the interface between them, thereby improving the efficiency of the working fluid in enhancing the grinding. In other exemplary embodiments, a polishing pad in accordance with the present invention can reduce or eliminate dishing and/or edge corrosion of the wafer surface during grinding.

在進一步示範性實施例中,使用具有根據本發明之多孔元件之一研磨墊可准許處理較大直徑晶圓同時維持所需表面均勻度程度以獲得高晶片良率,在需要調節墊表面以維持晶圓表面之研磨均勻度之前處理更多晶圓或減少處理時間及墊調節器之磨損。在某些實施例中,具有多孔研磨元件之CMP墊亦可提供具有諸如凹槽之表面紋理之習用CMP墊之益處及優點,但可以一較低成本更可再生產地加以製造。在額外實施例中,將該等研磨元件接合至該支撐層可消除對使用一導向板將該等元件固定至該支撐層之需要。In a further exemplary embodiment, the use of a polishing pad having one of the porous elements in accordance with the present invention permits the processing of larger diameter wafers while maintaining the desired degree of surface uniformity to achieve high wafer yields, where adjustment of the pad surface is required to maintain Processing more wafers prior to polishing uniformity of the wafer surface or reducing processing time and pad conditioner wear. In some embodiments, a CMP pad having a porous abrasive element can also provide the benefits and advantages of a conventional CMP pad having a surface texture such as a groove, but can be manufactured at a lower cost and more reproducible. In an additional embodiment, joining the abrasive elements to the support layer eliminates the need to secure the elements to the support layer using a guide plate.

已概述本發明之示範性實施例之各種態樣及優點。以上發明內容並不意欲描述本發明之當前某些示範性實施例之每一所圖解說明實施例或每一實施方案。以下圖式及實施方式更特定地例示使用本文中所揭示原理之某些較佳實施例。Various aspects and advantages of the exemplary embodiments of the invention have been summarized. The above summary is not intended to describe each illustrated embodiment or every embodiment of the present exemplary embodiments. The following figures and embodiments more particularly exemplify certain preferred embodiments using the principles disclosed herein.

在用於晶圓研磨之一典型CMP漿液製程中,將擁有一特性形貌之晶圓放置成與一研磨墊及含有一磨料及一研磨化學品之一研磨溶液接觸。若該研磨墊係順應研磨墊,則可發生凹陷及腐蝕現象,此乃因軟墊以與凸起區相同之速率研磨晶圓上之低區。若該研磨墊係剛性研磨墊,則可極大地減少凹陷及腐蝕;然而,儘管剛性研磨墊可有利地產生良好晶粒內平坦化均勻度,但其亦可不利地產生不良晶圓內均勻度,此乃因發生於晶圓周邊上之一回彈效應。此回彈效應導致不良邊緣良率及一狹窄CMP研磨製程窗口。另外,可難以藉助一剛性研磨墊開發一穩定研磨製程,此乃因此等墊對不同的晶圓形貌敏感,且完全相依於一墊調節器之使用以形成保存研磨溶液且與晶圓介接之一最佳研磨紋理。In a typical CMP slurry process for wafer polishing, a wafer having a characteristic topography is placed in contact with a polishing pad and a polishing solution containing an abrasive and a polishing chemical. If the polishing pad conforms to the polishing pad, dents and corrosion can occur because the pad grinds the lower region on the wafer at the same rate as the raised regions. If the polishing pad is a rigid polishing pad, the depression and corrosion can be greatly reduced; however, although the rigid polishing pad can advantageously produce good in-grain planarization uniformity, it can also disadvantageously produce poor intra-wafer uniformity. This is due to a rebound effect occurring on the periphery of the wafer. This rebound effect results in poor edge yield and a narrow CMP grinding process window. In addition, it may be difficult to develop a stable polishing process by means of a rigid polishing pad, so that the pads are sensitive to different crystal domes and are completely dependent on the use of a pad conditioner to form a polishing solution and interface with the wafer. One of the best abrasive textures.

本發明係針對具有接合至一支撐層之多個浮動研磨元件之經改良之研磨墊,在各種實施例中,其組合順應及剛性研磨墊兩者之某些有利特性,同時消除或減少相應墊之某些不利特性。藉由將該等研磨元件描述為接合至一支撐層之「浮動」研磨元件,申請人本意係該等研磨元件中之每一者均接合至一支撐層以限制該等研磨元件相對於其他研磨元件中之一者或多者之橫向移動,但保持可沿大體垂直於該等研磨元件之一研磨表面之軸線移動。The present invention is directed to an improved polishing pad having a plurality of floating abrasive elements bonded to a support layer, in various embodiments, which combines with certain advantageous characteristics of both rigid and rigid polishing pads while eliminating or reducing corresponding pads Some of the disadvantages. By describing the abrasive elements as "floating" abrasive elements bonded to a support layer, Applicants intend that each of the abrasive elements is bonded to a support layer to limit the abrasive elements relative to other abrasives. One or more of the elements move laterally but remain movable along an axis generally perpendicular to one of the abrasive elements.

現將特別參照圖式來描述本發明之各種示範性實施例。可在不背離本發明之精神及範疇之情形下對本發明之示範性實施例採取各種修改及變更。因此,將理解,本發明之該等實施例並不限於下文所述之示範性實施例,但將由申請專利範圍及其任何等效內容中所闡明之限制加以控制。Various exemplary embodiments of the present invention will now be described with particular reference to the drawings. Various modifications and changes may be made to the exemplary embodiments of the invention without departing from the spirit and scope of the invention. Therefore, it is to be understood that the embodiments of the present invention are not limited to the exemplary embodiments described herein, but are limited by the scope of the claims and their equivalents.

參照圖1,其顯示一研磨墊2之一示範性實施例,其包括複數個研磨元件4-4',研磨元件4-4'中之每一者均接合至一支撐層10以限制研磨元件4-4'相對於其他研磨元件4-4'中之一者或多者之橫向移動,但保持可沿垂直於每一研磨元件4-4'之一研磨表面14之軸線移動。在圖1所圖解說明之特定實施例中,顯示研磨元件4-4'(舉例而言)藉由直接熱接合至支撐層10或藉由使用黏合劑而固定至支撐層10之一第一主側。Referring to Figure 1, there is shown an exemplary embodiment of a polishing pad 2 comprising a plurality of abrasive elements 4-4', each of which is bonded to a support layer 10 to limit abrasive elements 4-4' moves laterally relative to one or more of the other abrasive elements 4-4', but remains movable along an axis perpendicular to one of the abrasive surfaces 14 of each of the abrasive elements 4-4'. In the particular embodiment illustrated in FIG. 1, the polishing element 4-4' is shown, for example, by direct thermal bonding to the support layer 10 or to one of the first layers of the support layer 10 by the use of an adhesive. side.

在圖1所圖解說明之特定示範性實施例中,支撐層10固定至一順應層16,其定位於與複數個研磨元件4-4'相對之一側上。此外,顯示一選擇性黏合劑層12處於順應層16與支撐層10之間的一界面處。選擇性黏合劑層12可用於將支撐層10之第二主側固定至順應層16。另外,與複數個研磨元件4-4'相對地固定至順應層16之一選擇性壓敏黏合劑層18可用於將研磨墊2臨時(例如,以可移除方式)固定至一CMP研磨裝置(在圖1中未顯示)之一研磨台板(在圖1中未顯示)。In the particular exemplary embodiment illustrated in Figure 1, the support layer 10 is secured to a compliant layer 16 that is positioned on a side opposite the plurality of abrasive elements 4-4'. Additionally, a selective adhesive layer 12 is shown at an interface between the compliant layer 16 and the support layer 10. The selective adhesive layer 12 can be used to secure the second major side of the support layer 10 to the compliant layer 16. Additionally, a selective pressure sensitive adhesive layer 18 secured to the compliant layer 16 opposite the plurality of abrasive elements 4-4' can be used to temporarily (e.g., removably) the polishing pad 2 to a CMP polishing apparatus. One of the polishing platens (not shown in Figure 1) (not shown in Figure 1).

圖1中另外顯示一選擇性研磨成分分佈層8,其亦可用作研磨元件4-4'之一導向板。在一研磨製程期間,選擇性研磨成分分佈層8幫助工作液體及/或研磨漿液至個別研磨元件4-4'之分佈。當用作一導向板時,研磨成分分佈層8(導向板)可定位於支撐層10之第一主側上以促進複數個研磨元件4-4'之配置,以使得研磨成分分佈層8(導向板)之一第一主表面遠離支撐層10,且研磨成分分佈層8(導向板)之一第二主表面與研磨成分分佈層8之該第一主表面相對。Also shown in Fig. 1 is a selective abrasive component distribution layer 8, which can also be used as a guide plate for the abrasive element 4-4'. The selective abrasive component distribution layer 8 assists in the distribution of the working liquid and/or the abrasive slurry to the individual abrasive elements 4-4' during a polishing process. When used as a guide plate, the abrasive component distribution layer 8 (guide plate) can be positioned on the first major side of the support layer 10 to facilitate the configuration of the plurality of abrasive elements 4-4' such that the abrasive component distribution layer 8 One of the first main surfaces of the guide plate is away from the support layer 10, and one of the second main surfaces of the abrasive component distribution layer 8 (guide plate) is opposed to the first main surface of the abrasive component distribution layer 8.

研磨元件4-4'沿大致垂直於支撐層10之第一主側之一第一方向自研磨成分分佈層8(導向板)之第一主表面延伸。若研磨成分分佈層8亦用作一導向板,則較佳提供延伸穿過研磨成分分佈層8(導向板)之複數個孔口6。每一研磨元件4之一部分延伸至一對應孔口6中。因此,複數個孔口6可用於導引研磨元件4於支撐層10上之配置。The abrasive element 4-4' extends from a first major surface of the abrasive component distribution layer 8 (guide plate) in a first direction substantially perpendicular to one of the first major sides of the support layer 10. If the abrasive component distribution layer 8 is also used as a guide plate, it is preferred to provide a plurality of orifices 6 extending through the abrasive component distribution layer 8 (guide plates). A portion of each of the abrasive elements 4 extends into a corresponding aperture 6. Thus, a plurality of apertures 6 can be used to guide the arrangement of the abrasive elements 4 on the support layer 10.

在圖1所圖解說明之一個示範性實施例中,研磨元件4-4'中之至少一部分係多孔研磨元件4,且某些研磨元件4-4'係大致無孔研磨元件4'。然而,應瞭解,在未顯示於圖1中之其他示範性實施例中,所有研磨元件4-4'均可經選擇以係多孔研磨元件4,或所有研磨元件4-4'均可經選擇以係大致無孔研磨元件4'。In an exemplary embodiment illustrated in Figure 1, at least a portion of the abrasive elements 4-4' are porous abrasive elements 4, and certain abrasive elements 4-4' are substantially non-porous abrasive elements 4'. However, it should be understood that in other exemplary embodiments not shown in FIG. 1, all of the abrasive elements 4-4' may be selected to be porous abrasive elements 4, or all of the abrasive elements 4-4' may be selected. The substantially non-porous abrasive element 4' is used.

在圖1所圖解說明之特定實施例中,顯示兩個多孔研磨元件4連同一個大致無孔研磨元件4'。此外,將多孔研磨元件4顯示為包含一多孔研磨表面14及大致分佈於整個研磨元件4上之孔15兩者。然而,應瞭解,可使用任一數目之研磨元件4-4',且可將任一數目之研磨元件4-4'選擇為多孔研磨元件4或大致無孔研磨元件4'。In the particular embodiment illustrated in Figure 1, two porous abrasive elements 4 are shown along with a substantially non-porous abrasive element 4'. In addition, the porous abrasive element 4 is shown to include both a porous abrasive surface 14 and apertures 15 that are generally distributed throughout the abrasive element 4. However, it should be understood that any number of abrasive elements 4-4' can be used, and any number of abrasive elements 4-4' can be selected as porous abrasive elements 4 or substantially non-porous abrasive elements 4'.

另外,在未由圖1圖解說明之某些示範性實施例中,多個研磨元件4-4'可(舉例而言)在支撐層10之一主表面上配置成一圖案或在接合至該支撐層之前配置於用於配置該等研磨元件之一模板或模具中。舉例而言,圖3A-3B圖解說明複數個研磨元件4-4'之一個示範性配置,研磨元件4-4'在一模板30中配置成大體圓形二維陣列圖案32。在於模板30中將複數個研磨元件4-4'配置成圖案32之後,可使支撐層10之一第一主側接觸並接合至複數個研磨元件4-4',舉例而言,藉由直接熱接合至支撐層10或藉由使用一黏合劑或其他接合材料。Additionally, in certain exemplary embodiments not illustrated by FIG. 1, a plurality of abrasive elements 4-4' may, for example, be configured in a pattern on one of the major surfaces of the support layer 10 or bonded to the support The layers are previously disposed in a template or mold for configuring one of the abrasive elements. For example, Figures 3A-3B illustrate one exemplary configuration of a plurality of abrasive elements 4-4' that are configured in a template 30 into a generally circular two-dimensional array pattern 32. After the plurality of abrasive elements 4-4' are arranged in the pattern 30 in the template 30, one of the first major sides of the support layer 10 can be contacted and bonded to the plurality of abrasive elements 4-4', for example, by direct Thermal bonding to the support layer 10 or by using an adhesive or other bonding material.

此外,應理解,研磨墊2無需僅包括大致相同研磨元件4。因此,例如,多孔研磨元件及無孔研磨元件之任一組合或配置可構成複數個多孔研磨元件4。亦應瞭解,在某些實施例中,可有利地使用任一數目之多孔研磨元件4及大致無孔研磨元件4'及其任一組合或配置來形成具有接合至一支撐層10之浮動研磨元件4-4'之一研磨墊。Moreover, it should be understood that the polishing pad 2 need not include only substantially the same abrasive element 4. Thus, for example, any combination or arrangement of porous abrasive elements and non-porous abrasive elements can constitute a plurality of porous abrasive elements 4. It should also be appreciated that in certain embodiments, any number of porous abrasive elements 4 and substantially non-porous abrasive elements 4', and any combination or arrangement thereof, may be advantageously utilized to form a floating abrasive having a bond to a support layer 10. One of the components 4-4' is a polishing pad.

在圖1所圖解說明之某些額外示範性實施例中,一多孔研磨元件4之至少一表面,在此情形中至少研磨表面14,包括複數個孔(未在圖1中顯示,但在圖4中圖解說明)。在其他示範性實施例中,多孔研磨元件4中之每一者均亦顯示為具有大致分佈於整個研磨元件4上之複數個孔15。在其他示範性實施例中(未顯示於圖1中,但由圖4圖解說明),該等孔大致分佈於研磨元件4之研磨表面14處或僅接近研磨元件4之研磨表面14。然而,應瞭解,本發明之範疇涵蓋具有如下研磨元件4之組合或配置之研磨墊2:孔大致分佈於整個研磨元件4上之研磨元件4;孔大致分佈於研磨元件4之研磨表面14處或僅接近研磨元件4之研磨表面14之研磨元件4;及大致不具有孔之研磨元件4,且亦可有利地製造該等研磨墊。In certain additional exemplary embodiments illustrated in Figure 1, at least one surface of a porous abrasive element 4, in this case at least the abrasive surface 14, includes a plurality of apertures (not shown in Figure 1, but in Illustrated in Figure 4). In other exemplary embodiments, each of the porous abrasive elements 4 is also shown as having a plurality of apertures 15 that are generally distributed throughout the abrasive element 4. In other exemplary embodiments (not shown in FIG. 1, but illustrated by FIG. 4), the holes are generally distributed at or near the abrading surface 14 of the abrasive element 4. However, it should be understood that the scope of the present invention encompasses a polishing pad 2 having a combination or configuration of abrasive elements 4: the polishing elements 4 having pores distributed substantially throughout the polishing element 4; the apertures are generally distributed at the abrasive surface 14 of the abrasive element 4. Or only the abrasive element 4 of the abrasive surface 14 of the abrasive element 4; and the abrasive element 4 having substantially no holes, and such abrasive pads may also be advantageously fabricated.

參照圖2,其顯示一研磨墊2'之另一示範性實施例,研磨墊2'包括:一支撐層10,其具有一第一主側及與該第一主側相對之一第二主側;複數個研磨元件4-4',其接合至支撐層10之第一主側;及一選擇性導向板28,其具有一第一主表面及與該第一主表面相對之一第二主表面,導向板28經定位以在選擇性導向板28之第一主表面遠離支撐層10之情形下將複數個研磨元件4-4'配置於支撐層10之第一主側上。在圖1所圖解說明之特定實施例中,顯示研磨元件4(例如)藉由直接熱接合至支撐層10或藉由使用一黏合劑而固定至支撐層10之一第一主側。Referring to Figure 2, there is shown another exemplary embodiment of a polishing pad 2' comprising: a support layer 10 having a first major side and a second main opposite the first major side a plurality of abrasive elements 4-4' joined to a first major side of the support layer 10; and a selective guide plate 28 having a first major surface and a second opposite the first major surface The major surface, guide plate 28 is positioned to position a plurality of abrasive elements 4-4' on the first major side of support layer 10 with the first major surface of selective guide plate 28 remote from support layer 10. In the particular embodiment illustrated in FIG. 1, the abrasive element 4 is shown attached to the first major side of the support layer 10, for example, by direct thermal bonding to the support layer 10 or by the use of an adhesive.

在圖2所圖解說明之特定示範性實施例中,支撐層10係固定至一順應層16,順應層16定位於支撐層10之與固定至支撐層10之第一主側之複數個研磨元件4-4'相對之第二主側上。此外,顯示選擇性黏合劑層12處於順應層16與支撐層10之間的一界面處。選擇性黏合劑層12可用於將支撐層10之第二主側固定至順應層16。另外,與複數個研磨元件4-4'相對地固定至順應層16之一選擇性壓敏黏合劑層18可用於將研磨墊2臨時(例如,以可移除方式)固定至一CMP研磨裝置(在圖2中未顯示)之一研磨台板(在圖2中未顯示)。In the particular exemplary embodiment illustrated in FIG. 2, the support layer 10 is secured to a compliant layer 16 that is positioned over the plurality of abrasive elements of the support layer 10 and to the first major side of the support layer 10. 4-4' is opposite the second main side. In addition, the selective adhesive layer 12 is shown at an interface between the compliant layer 16 and the support layer 10. The selective adhesive layer 12 can be used to secure the second major side of the support layer 10 to the compliant layer 16. Additionally, a selective pressure sensitive adhesive layer 18 secured to the compliant layer 16 opposite the plurality of abrasive elements 4-4' can be used to temporarily (e.g., removably) the polishing pad 2 to a CMP polishing apparatus. One of the polishing platens (not shown in Figure 2) (not shown in Figure 2).

在圖2之該示範性實施例中亦顯示一選擇性導向板28。通常不需要選擇性導向板28(其亦可用作用於將複數個研磨元件4-4'配置於支撐層10之第一主側上之對準模板)來製作根據本發明之研磨墊2'。在某些示範性實施例中,可自研磨墊中完全消除選擇性導向板28,如圖1之研磨墊2所圖解說明。製造此等實施例可比其他習知之包括多個研磨元件之研磨墊有利地更容易且更廉價。A selective guide plate 28 is also shown in the exemplary embodiment of FIG. A polishing pad 2' in accordance with the present invention is typically fabricated without the optional guide plate 28 (which can also be used as an alignment template for arranging a plurality of abrasive elements 4-4' on the first major side of the support layer 10). In certain exemplary embodiments, the selective guide plate 28 can be completely eliminated from the polishing pad, as illustrated by the polishing pad 2 of FIG. Fabricating such embodiments may be advantageously easier and less expensive than other conventional polishing pads comprising a plurality of abrasive elements.

圖2中另外顯示一選擇性研磨成分分佈層8',其亦可用作研磨元件4-4'之一導向板。在一研磨製程期間,選擇性研磨成分分佈層8'幫助工作液體及/或研磨漿液至個別研磨元件4-4'之分佈。當用作一導向板時,研磨成分分佈層8可定位於支撐層10之第一主側上以促進複數個研磨件4之配置,以使得研磨成分分佈層8'之一第一主表面遠離支撐層10,且研磨成分分佈層8'之一第二主表面與研磨成分分佈層8'之該第一主表面相對。如在圖2中所示,亦可提供延伸穿過至少選擇性導向板28(若存在)及/或選擇性研磨成分分佈層8'(若存在)之複數個孔口6。Also shown in Fig. 2 is a selective abrasive component distribution layer 8' which can also be used as a guide plate for the abrasive element 4-4'. During a polishing process, the selectively abrasive composition distribution layer 8' aids in the distribution of the working liquid and/or the abrasive slurry to the individual abrasive elements 4-4'. When used as a guide plate, the abrasive component distribution layer 8 can be positioned on the first major side of the support layer 10 to facilitate the configuration of the plurality of abrasive members 4 such that one of the first major surfaces of the abrasive component distribution layer 8' is remote from The support layer 10, and one of the second main surfaces of the abrasive component distribution layer 8' is opposed to the first major surface of the abrasive component distribution layer 8'. As shown in FIG. 2, a plurality of apertures 6 extending through at least the selective guide plate 28 (if present) and/or selectively abrasively distributing the component distribution layer 8' (if present) may also be provided.

如圖2所圖解說明,每一研磨元件4-4'均沿大致垂直於支撐層10之第一主側之一第一方向自選擇性導向板28之第一主表面延伸。在圖2所示之某些實施例中,每一研磨元件4-4'均具有一安裝凸緣,且每一研磨元件4-4'均藉由將對應凸緣接合至支撐層10之第一主側及視情況選擇性研磨成分分佈層8'之第二主表面而接合至支撐層10之第一主側。因此,在一研磨過程中,研磨元件4-4'自由地經歷沿大致垂直於支撐層10之第一主側之一方向之位移,同時仍保持接合至支撐層10,且藉由選擇性研磨成分分佈層8'視情況另外固定至支撐層10。As illustrated in FIG. 2, each of the abrasive elements 4-4' extends from a first major surface of the selective guide plate 28 in a first direction generally perpendicular to one of the first major sides of the support layer 10. In some embodiments shown in FIG. 2, each of the abrasive elements 4-4' has a mounting flange, and each of the abrasive elements 4-4' is joined to the support layer 10 by a corresponding flange A primary side and optionally a second major surface of the component distribution layer 8' is selectively bonded to the first major side of the support layer 10. Thus, during a grinding process, the abrasive element 4-4' is free to undergo displacement in a direction substantially perpendicular to one of the first major sides of the support layer 10 while still remaining bonded to the support layer 10, and by selective grinding The component distribution layer 8' is additionally fixed to the support layer 10 as appropriate.

在此等實施例中,每一研磨元件4-4'之至少一部分延伸至一對應孔口6中,且每一研磨元件4-4'亦通過對應孔口6且自選擇性導向板28之第一主表面向外延伸。因此,選擇性導向板28及/或選擇性研磨成分分佈層8'之複數個孔口6亦可用作一模板以導引研磨元件4-4'於支撐層10之第一主側上之橫向配置。換言之,選擇性導向板28及/或選擇性研磨成分分佈層8'可用作一模板或導向件以在研磨墊製造過程期間將複數個研磨元件4-4'配置在支撐層10之第一主側上。In these embodiments, at least a portion of each of the abrasive elements 4-4' extends into a corresponding aperture 6, and each of the abrasive elements 4-4' also passes through a corresponding aperture 6 and is self-selectively directed to the plate 28. The first major surface extends outward. Thus, the plurality of apertures 6 of the selective guide plate 28 and/or the selective abrasive component distribution layer 8' can also be used as a template to guide the abrasive element 4-4' to the first major side of the support layer 10. Horizontal configuration. In other words, the selective guide plate 28 and/or the selective abrasive component distribution layer 8' can be used as a template or guide to configure the plurality of abrasive elements 4-4' at the first of the support layer 10 during the polishing pad manufacturing process. On the main side.

在圖2所圖解說明之特定實施例中,選擇性導向板28可包括定位於支撐層10與研磨成分分佈層8'之間的一界面處之一黏合劑(未顯示)。選擇性導向板28可因此用以將選擇性研磨成分分佈層8'固定至支撐層10,藉此將複數個研磨元件4-4'牢固地固定至支撐層10之第一主側。然而,可使用其他接合方法,包含使用(例如)熱及壓力將研磨元件4-4'直接接合至支撐層10。In the particular embodiment illustrated in Figure 2, the selective guide plate 28 can include an adhesive (not shown) positioned at an interface between the support layer 10 and the abrasive component distribution layer 8'. The selective guide plate 28 can thus be used to secure the selective abrasive component distribution layer 8' to the support layer 10, thereby securely securing the plurality of abrasive elements 4-4' to the first major side of the support layer 10. However, other joining methods can be used, including direct bonding of the abrasive element 4-4' to the support layer 10 using, for example, heat and pressure.

在圖2所圖解說明之一相關示範性實施例中,該複數個孔口可配置為一孔口陣列,其中孔口6之至少一部分包括由選擇性研磨成分分佈層8'形成之一主孔及由選擇性導向板28形成之一底切區域,且該底切區域形成與對應研磨元件凸緣接合之一肩狀物,藉此在無需將研磨元件4-4'直接接合至支撐層10之情形下將研磨元件4-4'牢固地固定至支撐層10。另外,在未由圖2圖解說明之某些示範性實施例中,多個研磨元件4-4'可配置成一圖案,舉例而言,配置為配置於支撐層10之一主表面上之一二維元件陣列,或在接合至支撐層之前配置於用以配置該等研磨元件之一模板或模具中。In one related exemplary embodiment illustrated in FIG. 2, the plurality of apertures may be configured as an array of apertures, wherein at least a portion of the apertures 6 comprise a primary aperture formed by the selective abrasive composition distribution layer 8' And forming an undercut region by the selective guide plate 28, and the undercut region forms a shoulder that engages the corresponding abrasive element flange, thereby eliminating the need to directly bond the abrasive element 4-4' to the support layer 10 The abrasive element 4-4' is securely fixed to the support layer 10 in the case. Additionally, in certain exemplary embodiments not illustrated by FIG. 2, the plurality of abrasive elements 4-4' can be configured in a pattern, for example, configured to be disposed on one of the major surfaces of the support layer 10 The array of dimension elements, or prior to bonding to the support layer, is disposed in a template or mold for configuring one of the abrasive elements.

在圖2所圖解說明之進一步示範性實施例中,一多孔研磨元件4之至少一表面,在此情形中至少研磨表面14,包括複數個孔(未在圖2中顯示,但在圖4中圖解說明)。在其他示範性實施例中,多孔研磨元件4中之每一者亦顯示為具有大致分佈於整個研磨元件4上之複數個孔15。在其他示範性實施例中(未顯示於圖2中,但由圖4圖解說明),該等孔大致分佈於多孔研磨元件4之研磨表面14處或僅接近研磨元件4之研磨表面14。然而,應瞭解,本發明之範疇亦涵蓋具有如下研磨元件4之組合或配置之研磨墊2':具有大致分佈於整個研磨元件4上之孔之研磨元件4、具有大致分佈於研磨元件4之研磨表面14處或僅接近研磨元件4之研磨表面14之孔之研磨元件4及大致不具有孔之研磨元件4,且亦可有利地製造該等研磨墊。In a further exemplary embodiment illustrated in Figure 2, at least one surface of a porous abrasive element 4, in this case at least the abrasive surface 14, comprises a plurality of apertures (not shown in Figure 2, but in Figure 4 Graphical illustration). In other exemplary embodiments, each of the porous abrasive elements 4 is also shown as having a plurality of apertures 15 that are generally distributed throughout the abrasive element 4. In other exemplary embodiments (not shown in FIG. 2, but illustrated by FIG. 4), the holes are generally distributed at or near the abrasive surface 14 of the porous abrasive element 4. However, it should be understood that the scope of the present invention also encompasses a polishing pad 2' having a combination or arrangement of abrasive elements 4: abrasive elements 4 having apertures generally distributed throughout the polishing element 4, having a distribution substantially distributed to the polishing elements 4. The polishing element 4 at or near the surface of the polishing surface 14 of the polishing element 4 and the polishing element 4 having substantially no holes are also advantageously fabricated.

現在參照圖4,具有包括複數個孔15之一多孔研磨表面14之一多孔研磨元件4可用於根據本發明另一示範性實施例之一研磨墊中。亦顯示圖4之多孔研磨元件4具有一凸緣25,該凸緣可用於(舉例而言)如在圖2中所圖解說明促進接合至一支撐層(在圖4中未顯示)。圖4中所示之多孔研磨元件包括大致定位於研磨表面14處之複數個孔15。然而,應理解,在其他實施例中,舉例而言,在圖1-2中所示之實施例中,複數個孔15可分佈於整個多孔研磨元件4及研磨表面14兩者處。應進一步理解,在其他實施例中,複數個孔15可分佈於整個多孔研磨元件4上,而非分佈於研磨表面14處。Referring now to Figure 4, a porous abrasive element 4 having a porous abrasive surface 14 comprising a plurality of apertures 15 can be used in a polishing pad in accordance with another exemplary embodiment of the present invention. The porous abrasive element 4 of Figure 4 is also shown having a flange 25 that can be used, for example, to facilitate bonding to a support layer (not shown in Figure 4) as illustrated in Figure 2. The porous abrasive element shown in FIG. 4 includes a plurality of apertures 15 positioned generally at the abrasive surface 14. However, it should be understood that in other embodiments, for example, in the embodiment illustrated in Figures 1-2, a plurality of apertures 15 may be distributed throughout the porous abrasive element 4 and the abrasive surface 14. It should be further understood that in other embodiments, a plurality of apertures 15 may be distributed throughout the porous abrasive element 4 rather than being distributed at the abrasive surface 14.

圖4圖解說明一多孔研磨元件4之一個特定形狀。應理解,可使用相同形狀來製作一大致無孔研磨元件4'。應進一步理解,實際上,研磨元件4-4'可形成為任一形狀,且可有利地使用具有兩個或更多個不同形狀之複數個研磨元件4-4',且在接合至用以形成一研磨墊(未顯示於圖4中)之一支撐層(未顯示於圖4中)之前視情況將該等研磨元件配置成一圖案。Figure 4 illustrates a particular shape of a porous abrasive element 4. It should be understood that a substantially non-porous abrasive element 4' can be made using the same shape. It should be further understood that, in practice, the abrasive element 4-4' can be formed in any shape, and a plurality of abrasive elements 4-4' having two or more different shapes can be advantageously used, and bonded to The polishing elements are arranged in a pattern as appropriate prior to forming a support layer (not shown in Figure 4) of a polishing pad (not shown in Figure 4).

在某些示範性實施例中,研磨元件4-4'可藉由一高度(H)及一寬度(W)來表徵,如圖4所圖解說明。另外,研磨元件4-4'之橫截面形狀(沿大體平行於研磨表面14之一方向穿過一研磨元件4-4'截取)可端視既定應用廣泛地變化。雖然圖4顯示具有一大體圓柱形橫截面之一大體圓柱形研磨元件4,但在某些實施例中可能有且可能需要其他橫截面形狀。舉例而言,可使用圓形、橢圓形、三角形、正方形、矩形及梯形橫截面形狀。In certain exemplary embodiments, the abrasive element 4-4' can be characterized by a height (H) and a width (W), as illustrated in FIG. Additionally, the cross-sectional shape of the abrasive element 4-4' (taken through one of the abrasive elements 4-4' in a direction generally parallel to the direction of the abrasive surface 14) can vary widely depending on the intended application. Although FIG. 4 shows a generally cylindrical abrasive element 4 having a generally cylindrical cross section, other cross sectional shapes may be and may be required in certain embodiments. For example, circular, elliptical, triangular, square, rectangular, and trapezoidal cross-sectional shapes can be used.

對於具有如圖4所示圓形橫截面之大體圓柱形研磨元件4,在某些實施例中,研磨元件4沿大體平行於研磨表面14之一方向之橫截面直徑係至少約50微米(μm)、更佳地至少約1 mm、又更佳地至少約5 mm。在某些實施例中,研磨元件4沿大體平行於研磨表面14之一方向之橫截面直徑係至多約20 mm、更佳地至多約15 mm、又更佳地至多約12 mm。在某些實施例中,研磨元件之如圖4中所示截取於研磨表面14處且對應於寬度(W)之直徑可係自約50 μm至約20 mm,在某些實施例中,該直徑係自約1 mm至約15 mm,且在其他實施例中,該橫截面直徑係自約5 mm至約12 mm。For a generally cylindrical abrasive element 4 having a circular cross-section as shown in Figure 4, in certain embodiments, the abrasive element 4 is at least about 50 microns (μm) along a cross-sectional diameter generally parallel to one of the abrasive surfaces 14. More preferably, it is at least about 1 mm, and more preferably at least about 5 mm. In certain embodiments, the abrasive element 4 has a cross-sectional diameter in a direction generally parallel to one of the abrasive surfaces 14 of up to about 20 mm, more preferably up to about 15 mm, still more preferably up to about 12 mm. In certain embodiments, the abrasive element is taken at the abrasive surface 14 as shown in FIG. 4 and the diameter corresponding to the width (W) can be from about 50 μm to about 20 mm, in certain embodiments, The diameter is from about 1 mm to about 15 mm, and in other embodiments, the cross-sectional diameter is from about 5 mm to about 12 mm.

對於具有一非圓形橫截面之非圓柱形研磨元件而言,可使用一特性尺寸針對一高度、寬度及/或長度表徵研磨元件尺寸。在某些示範性實施例中,特性尺寸可經選擇而係至少約50 μm、更佳地係至少約1 mm、又更佳地係至少約5 mm。在某些實施例中,研磨元件4沿大體平行於研磨表面14之一方向之橫截面直徑係最多約20 mm、更佳地至多約15 mm、又更佳地至多約12 mm。For non-cylindrical abrasive elements having a non-circular cross section, a characteristic dimension can be used to characterize the size of the abrasive element for a height, width and/or length. In certain exemplary embodiments, the characteristic size may be selected to be at least about 50 μm, more preferably at least about 1 mm, and even more preferably at least about 5 mm. In certain embodiments, the abrasive element 4 has a cross-sectional diameter in a direction generally parallel to one of the abrasive surfaces 14 of up to about 20 mm, more preferably up to about 15 mm, still more preferably up to about 12 mm.

在其他示範性實施例中,每一研磨元件4沿大體平行於研磨表面14之一方向之橫截面面積可係至少約1 mm2 ,在其他實施例中,係至少約10 mm2 ,且在又其他實施來中係至少約或係20 mm2 。在其他示範性實施例中,每一研磨元件4沿大體平行於研磨表面14之一方向之橫截面面積可係至多約1,000 mm2 ,在其他實施例中,係至多約500 mm2 ,且在又其他實施例中係至多約250 mm2In other exemplary embodiments, each of the abrasive elements 4 may have a cross-sectional area that is generally at least about 1 mm 2 in a direction generally parallel to one of the abrasive surfaces 14, and in other embodiments, at least about 10 mm 2 , and Still other embodiments are at least about 20 mm 2 . In other exemplary embodiments, the cross-sectional area of each of the abrasive elements 4 in a direction generally parallel to one of the abrasive surfaces 14 may be up to about 1,000 mm 2 , and in other embodiments, up to about 500 mm 2 , and in In still other embodiments, up to about 250 mm 2 is used .

端視所預期之應用,研磨元件(在圖1-2中之4-4')可以各種各樣的圖案分佈於支撐層(圖1-2中之10)之一主側上,且該等圖案可為規則或不規則圖案。該等研磨元件可駐存於支撐層之大致整個表面上,或支撐層可具有不包含研磨元件之區域。在某些實施例中,研磨元件具有至少30%、至少40%或至少50%之支撐層的平均表面覆蓋率。在其他實施例中,該等研磨元件具有支撐層之主表面之總面積之至多約80%、至多約70%或至多約60%之支撐層平均表面覆蓋率,如由研磨元件之數目、每一研磨元件之橫截面面積及研磨墊之橫截面面積所確定。Depending on the intended application, the abrasive elements (4-4' in Figure 1-2) can be distributed in a variety of patterns on one of the main sides of the support layer (10 in Figure 1-2), and such The pattern can be a regular or irregular pattern. The abrasive elements can reside on substantially the entire surface of the support layer, or the support layer can have regions that do not include abrasive elements. In certain embodiments, the abrasive element has an average surface coverage of at least 30%, at least 40%, or at least 50% of the support layer. In other embodiments, the abrasive elements have an average surface coverage of the support layer of up to about 80%, up to about 70%, or up to about 60% of the total area of the major surface of the support layer, such as by the number of abrasive elements, per The cross-sectional area of an abrasive element and the cross-sectional area of the polishing pad are determined.

在某些示範性實施例中,研磨墊沿大體平行於該研磨墊之一主表面的一方向之橫截面面積介於自約100 cm2 至約300,000 cm2 之範圍內;在其他實施例中,介於自約1,000 cm2 至約100,000cm2 之範圍內;且在又另一實施例中,介於自約2,000 cm2 至約50,000 cm2 之範圍內。In certain exemplary embodiments, the polishing pad has a cross-sectional area in a direction generally parallel to one of the major surfaces of the polishing pad ranging from about 100 cm 2 to about 300,000 cm 2 ; in other embodiments , from the range of about between 1,000 cm 2 of about 100,000cm 2; and in yet another embodiment, in the range from about 2,000 cm 2 of about 50,000 cm 2.

在某些示範性實施中,在研磨墊(圖1中之2,圖2中之2')第一次用於一研磨操作中之前,每一研磨元件(圖1-2中之4-4')沿大致垂直於支撐層(圖1-2中之10)之第一主側之第一方向延伸。在某些示範性實施例中,該等研磨元件沿第一方向在包含選擇性研磨成分分佈層(圖1中之8,圖2中之8')及/或選擇性導向板(圖2中之28)之一平面上方延伸至少約0 mm、0.25 mm、至少約0.3 mm或至少約0.5 mm。In some exemplary implementations, each polishing element (4-4 in Figure 1-2) is used before the polishing pad (2 in Figure 1, 2' in Figure 2) for the first time in a polishing operation. ') extends in a first direction that is substantially perpendicular to the first major side of the support layer (10 in Figures 1-2). In certain exemplary embodiments, the abrasive elements comprise a selective abrasive component distribution layer (8 in FIG. 1, 8' in FIG. 2) and/or a selective guide plate in the first direction (FIG. 2) One of the 28) extends above the plane by at least about 0 mm, 0.25 mm, at least about 0.3 mm, or at least about 0.5 mm.

在其他示範性實施例中,可使該等研磨元件之該等研磨表面與選擇性研磨成分分佈層之所曝露的主表面齊平。在其他示範性實施例中,可使該等研磨元件之該等研磨表面凹入低於選擇性研磨成分分佈層之所曝露的主表面,且隨後(舉例而言)藉由移除選擇性研磨成分分佈層之一部分來使該等研磨元件之該等研磨表面與選擇性研磨成分分佈層之所曝露的主表面齊平或使其延伸超過該主表面。此等實施例可有利地與研磨成分分佈層一起使用,該等研磨成分分佈層經選擇以在研磨製程期間或在與工件接觸之前、期間或之後在施加至該研磨墊之選擇性調節製程中受到磨蝕或腐蝕。In other exemplary embodiments, the abrasive surfaces of the abrasive elements can be flush with the exposed major surface of the selective abrasive component distribution layer. In other exemplary embodiments, the abrasive surfaces of the abrasive elements can be recessed below the exposed major surface of the selective abrasive component distribution layer, and then, for example, by selective selective polishing. One portion of the component distribution layer is such that the abrasive surfaces of the abrasive elements are flush with or extend beyond the exposed major surface of the selective abrasive component distribution layer. Such embodiments may advantageously be used with a polishing composition distribution layer selected to be selectively applied during the polishing process or before, during or after contact with the workpiece in a selective conditioning process applied to the polishing pad. Abraded or corroded.

在進一步示範性實施例中,每一研磨元件4-4'均沿第一方向在包含支撐層(圖1-2中之10)之一平面上方延伸至少約0.25 mm、至少約0.3 mm、或至少約0.5 mm。在額外示範性實施例中,研磨表面(圖1-2中之14)高於研磨元件之基底或底部之高度(即,如圖4中所示研磨元件之高度(H))可係0.25 mm、0.5 mm、1.0 mm、1.5 mm、2.0 mm、2.5 mm、3.0 mm、5.0 mm、10 mm或更多,此相依於所使用之研磨成分及選擇用於研磨元件之材料。In a further exemplary embodiment, each of the abrasive elements 4-4' extends at least about 0.25 mm, at least about 0.3 mm, or in a first direction above a plane comprising the support layer (10 in Figures 1-2), or At least about 0.5 mm. In an additional exemplary embodiment, the abrasive surface (14 in Figures 1-2) is higher than the height of the base or bottom of the abrasive element (i.e., the height (H) of the abrasive element as shown in Figure 4) can be 0.25 mm , 0.5 mm, 1.0 mm, 1.5 mm, 2.0 mm, 2.5 mm, 3.0 mm, 5.0 mm, 10 mm or more, depending on the grinding composition used and the material selected for the abrasive element.

再次參照圖1-2,在整個選擇性研磨成分分佈層(圖1中之8,圖2中之8')及/或選擇性導向板28上之孔口(圖1-2中之6)之深度及間隔可針對一特定CMP製程視需要變化。在某些實施例中,該等研磨元件(圖1-2中之4-4')各自相對於彼此及研磨成分分佈層(圖1中之8,圖2中之28)以及導向板31大致維持在平面定向中,且在選擇性研磨成分分佈層(圖1中之8,圖2中之8')及/或選擇性導向板28表面上方伸出。Referring again to Figures 1-2, the entire selective component distribution layer (8 in Figure 1, 8' in Figure 2) and/or the orifice on the selective guide plate 28 (6 in Figure 1-2) The depth and spacing can vary as needed for a particular CMP process. In some embodiments, the abrasive elements (4-4' in FIGS. 1-2) are each substantially opposite to each other and the abrasive component distribution layer (8 in FIG. 1, 28 in FIG. 2) and the guide plate 31. It is maintained in a planar orientation and projects above the surface of the selective abrasive component distribution layer (8 in Figure 1, 8' in Figure 2) and/or the surface of the selective guide plate 28.

在某些示範性實施例中,因研磨元件4-4'在任一選擇性導向板(圖2中之28)及任一選擇性研磨成分分佈層(圖1中之8,圖2中之8')上方延伸所形成之空洞容積可為一研磨成分於選擇性研磨成分分佈層(圖1中之8,圖2中之8')之表面上之分佈提供空間。研磨元件4-4'在研磨成分分佈層(圖1中之8,圖2中之8')上方突出一量,該突出量至少部分地相依於研磨元件之材料特性及研磨成分(工作液體及或磨料漿液)在研磨成分分佈層(圖1中之8,圖2中之8')之表面上方之所需流動。In some exemplary embodiments, the polishing element 4-4' is in any of the selective guide plates (28 in Figure 2) and any selectively abrasive component distribution layer (8 in Figure 1, 8 in Figure 2) The void volume formed by the upper extension can provide a space for the distribution of the abrasive component on the surface of the selective abrasive component distribution layer (8 in Fig. 1, 8' in Fig. 2). The polishing element 4-4' protrudes above the polishing component distribution layer (8 in Fig. 1, 8' in Fig. 2), the amount of protrusion being at least partially dependent on the material properties of the polishing element and the abrasive composition (working liquid and Or abrasive slurry) the desired flow above the surface of the abrasive component distribution layer (8 in Figure 1, 8' in Figure 2).

如圖1-2所圖解說明,在某些示範性實施例中,研磨元件4-4'之至少一部分係多孔研磨元件4,在某些實施例中其至少具有一多孔研磨表面(圖1-2中之14),該多孔研磨表面可與欲研磨之一基板(未顯示於圖1中)形成滑動或旋轉接觸。在其他實施例中,該等多孔研磨元件可不具有一多孔研磨表面14,但可具有大致分佈於整個多孔研磨元件4上之孔15。此等多孔研磨元件可用作展示一順應研磨墊之某些有利特性之順應研磨元件。在2008年6月26日申請之名稱為「POLISHING PAD WITH POROUS ELEMENTS AND METHOD OF MAKING AND USING THE SAME」之共同待決之美國臨時專利申請案61/075970中揭示若干適合之多孔研磨元件。As illustrated in Figures 1-2, in certain exemplary embodiments, at least a portion of the abrasive element 4-4' is a porous abrasive element 4, which in some embodiments has at least one porous abrasive surface (Figure 1 14 of the -2), the porous abrasive surface can be in sliding or rotational contact with one of the substrates to be ground (not shown in Figure 1). In other embodiments, the porous abrasive elements may not have a porous abrasive surface 14, but may have apertures 15 that are generally distributed throughout the porous abrasive element 4. These porous abrasive elements can be used as a compliant abrasive element that exhibits certain advantageous properties of a compliant abrasive pad. A number of suitable porous abrasive elements are disclosed in co-pending U.S. Provisional Patent Application Serial No. 61/075,970, the entire disclosure of which is incorporated herein by reference.

在某些特定示範性實施例中,多孔研磨元件4中之一者或多者可包括以一多孔發泡體形式大致分佈於整個研磨元件4上之複數個孔15。該發泡體可係一封閉室發泡體或一開放室發泡體。在某些實施例中,封閉室發泡體可係較佳。較佳地,呈發泡體形式之複數個孔15展示一單峰孔尺寸(例如,孔直徑)分佈。在某些示範性實施例中,該複數個孔展示至少約1奈米(nm)、至少約100 nm、至少約500 nm、或至少約1 μm之一平均孔尺寸。在其他示範性實施例中,該複數個孔展示至多約100 μm、至多約50 μm、至多約10 μm或至多約1 μm之一平均孔尺寸。在某些目前較佳之實施例中,該複數個孔展示自約1 μm至約50 μm之一平均孔尺寸。In certain particular exemplary embodiments, one or more of the porous abrasive elements 4 can include a plurality of apertures 15 that are generally distributed throughout the abrasive element 4 in the form of a porous foam. The foam may be a closed chamber foam or an open chamber foam. In certain embodiments, a closed cell foam may be preferred. Preferably, the plurality of apertures 15 in the form of a foam exhibit a monomodal pore size (e.g., pore diameter) distribution. In certain exemplary embodiments, the plurality of pores exhibit an average pore size of at least about 1 nanometer (nm), at least about 100 nm, at least about 500 nm, or at least about 1 μιη. In other exemplary embodiments, the plurality of pores exhibit an average pore size of up to about 100 μm, up to about 50 μm, up to about 10 μm, or up to about 1 μm. In some presently preferred embodiments, the plurality of apertures exhibit an average pore size from about 1 μm to about 50 μm.

現在參照圖1-2及4,研磨元件4-4'之研磨表面14可係一大致平坦表面或可被紋理化。在某些當前較佳實施例中,使每一多孔研磨元件之至少研磨表面多孔,例如具有微觀表面開口或孔15,該等微觀表面開口或孔可採取出孔、通路、凹槽、通道及類似物之形式。位於研磨表面處之此等孔15可用於促進於一基板(未顯示)與對應多孔研磨元件之間的界面處分佈並維持一研磨成分(例如,未顯示於該等圖中之一工作液體及/或磨料研磨漿液)。Referring now to Figures 1-2 and 4, the abrasive surface 14 of the abrasive element 4-4' can be a substantially planar surface or can be textured. In some presently preferred embodiments, at least the abrasive surface of each porous abrasive element is porous, for example having microscopic surface openings or holes 15, which may take exits, passages, grooves, channels And the form of the analog. The apertures 15 at the abrasive surface can be used to facilitate distribution and maintenance of a polishing component at an interface between a substrate (not shown) and a corresponding porous abrasive element (eg, one of the working fluids not shown in the figures and / or abrasive slurry).

在圖4所圖解說明之某些示範性實施例中,研磨表面14包括係大體圓柱形毛細管之孔15。孔15可自研磨表面14延伸至研磨元件4中。在一相關實施例中,該研磨表面包括係大體圓柱形毛細管之孔15,其自研磨表面14延伸至多孔研磨元件4中。該等孔無需係圓柱形,且可能有其他孔幾何形狀,例如圓錐形、矩形、金字塔形及類似形狀。一般而言,該等孔之特性尺寸可指定為一深度連同一寬度(或直徑)及一長度。該等特性孔尺寸在深度上可介於自約25 μm至約6,500 μm之範圍內,在寬度(或直徑)上介於自約5 μm至約1000 μm之範圍內,且在長度上介於自約10 μm至約2,000 μm之範圍內。In certain exemplary embodiments illustrated in FIG. 4, the abrasive surface 14 includes apertures 15 that are generally cylindrical capillaries. The aperture 15 can extend from the abrasive surface 14 into the abrasive element 4. In a related embodiment, the abrasive surface includes a bore 15 that is a generally cylindrical capillary that extends from the abrasive surface 14 into the porous abrasive element 4. The holes need not be cylindrical and may have other hole geometries such as conical, rectangular, pyramidal, and the like. In general, the characteristic dimensions of the holes can be specified as a depth of the same width (or diameter) and a length. The characteristic pore sizes may range from about 25 μm to about 6,500 μm in depth, from about 5 μm to about 1000 μm in width (or diameter), and are in length From about 10 μm to about 2,000 μm.

在其他示範性實施(未予以圖解說明)中,研磨表面包括呈複數個通道形式之孔,其中每一通道較佳沿大體平行於研磨表面之一方向延伸跨越一對應研磨元件之研磨表面之至少一部分。較佳地,每一通道大體上平行於研磨表面之一方向延伸跨越一對應研磨元件之整個研磨表面。在其他示範性實施例(未予以圖解說明)中,該等孔可採取一二維通道陣列之形式,其中每一通道僅延伸跨越研磨表面之一部分。In other exemplary implementations (not illustrated), the abrasive surface includes apertures in the form of a plurality of channels, wherein each channel preferably extends at least along a direction generally parallel to one of the abrasive surfaces across an abrasive surface of a corresponding abrasive element portion. Preferably, each channel extends substantially parallel to one of the abrasive surfaces across the entire abrasive surface of a corresponding abrasive element. In other exemplary embodiments (not illustrated), the apertures may take the form of a two-dimensional array of channels, with each channel extending only across a portion of the abrasive surface.

在進一步示範性實施例(未予以圖解說明)中,該等通道實際上可具有任一形狀,例如,圓柱形、三角形、矩形、梯形、半球形及其組合。在某些示範性實施例中,每一通道沿大致垂直於研磨元件之研磨表面之一方向之深度經選擇以介於至少約100 μm m至約7500 μm之範圍中。在其他示範性實施例中,每一通道沿大致平行於研磨元件之研磨表面之一方向之橫截面面積經選擇以介於自約75平方微米(μm2 )至約3×106 μm2 之範圍中。In further exemplary embodiments (not illustrated), the channels may have virtually any shape, such as cylindrical, triangular, rectangular, trapezoidal, hemispherical, and combinations thereof. In certain exemplary embodiments, each channel is selected to be in a range of at least about 100 μm to about 7500 μm along a depth that is substantially perpendicular to one of the abrasive surfaces of the abrasive element. In other exemplary embodiments, the cross-sectional area of each channel along a direction generally parallel to one of the abrasive surfaces of the abrasive element is selected to range from about 75 square micrometers (μm 2 ) to about 3×10 6 μm 2 In the scope.

在進一步示範性實施例中,該支撐層可係大致不可壓縮,諸如一剛性薄膜或其他硬基板,但較佳地係可壓縮以提供朝向研磨表面引導之一正壓力。在某些示範性實施例中,該支撐層可包括一撓性且順應材料,諸如一順應橡膠或聚合物。在其他示範性實施例中,該支撐層較佳地係由一可壓縮聚合物材料(經發泡聚合物材料係較佳)製成。在某些實施例中,封閉室發泡體可係較佳,但在其他實施例中,可使用開放室發泡體。在額外示範性實施例中,該等研磨元件可作為固定至該支撐層之一整體研磨元件薄片與該支撐層一起形成,該支撐層可係一可壓縮或順應支撐層。In a further exemplary embodiment, the support layer can be substantially incompressible, such as a rigid film or other hard substrate, but is preferably compressible to provide a positive pressure toward the abrasive surface. In certain exemplary embodiments, the support layer can comprise a flexible and compliant material such as a compliant rubber or polymer. In other exemplary embodiments, the support layer is preferably made of a compressible polymeric material (preferably via a foamed polymeric material). In some embodiments, a closed cell foam may be preferred, but in other embodiments, an open cell foam may be used. In additional exemplary embodiments, the abrasive elements can be formed as a unitary abrasive element sheet secured to the support layer, the support layer being a compressible or conformable support layer.

該支撐層較佳地係液體不可滲透,以防止工作液體穿透或滲透至該支撐層中或從其穿透或滲透。然而,在某些實施例中,該支撐層可包括單獨或與一選擇性障壁層結合之液體可滲透材料,該障壁層用以防止或抑制液體從該支撐層穿透或滲透。此外,在其他實施例中,可有利地使用一多孔支撐層,(舉例而言)以在研磨期間將一工作液體保持在該研磨墊與一工件之間的界面處(例如一研磨漿液)。The support layer is preferably liquid impermeable to prevent penetration or penetration of working fluid into or from the support layer. However, in certain embodiments, the support layer can comprise a liquid permeable material, either alone or in combination with a selective barrier layer, to prevent or inhibit penetration or penetration of liquid from the support layer. Moreover, in other embodiments, a porous support layer may be advantageously employed, for example, to maintain a working fluid at the interface between the polishing pad and a workpiece during grinding (eg, an abrasive slurry) .

在某些示範性實施例中,支撐層可包括選自聚矽氧、天然橡膠、苯乙烯-丁二烯橡膠、氯丁橡膠、聚胺基甲酸酯、聚酯、聚乙烯及其組合之一聚合物材料。該支撐層可進一步包括各種各樣的額外材料,諸如填料、微粒、纖維、增強劑及類似材料。In certain exemplary embodiments, the support layer may comprise a material selected from the group consisting of polyoxyn, natural rubber, styrene-butadiene rubber, neoprene, polyurethane, polyester, polyethylene, and combinations thereof. A polymeric material. The support layer can further comprise a wide variety of additional materials such as fillers, particulates, fibers, reinforcing agents, and the like.

已發現聚胺基甲酸酯係尤其有用之支撐層材料,其中熱塑性聚胺基甲酸酯(TPU)尤其較佳。在某些目前較佳之實施例中,該支撐層係包括例如以下各項之一種或多種TPU之一薄膜:一ESTANE TPU(可自OH、Cleveland之Lubrizol Advanced Materials,Inc.購得)、一TEXIN或DESMOPAN TPU(可自PA、Pittsburgh之Bayer Material Science購得)、一PELLETHANE TPU(可自MI、Midland之Dow Chemical Company購得)及類似TPU。Polyurethane resins have been found to be particularly useful support layer materials, with thermoplastic polyurethanes (TPU) being especially preferred. In some presently preferred embodiments, the support layer comprises a film of one or more of the following TPUs: an ESTANE TPU (available from OH, Cleveland Lubrizol Advanced Materials, Inc.), a TEXIN Or DESMOPAN TPU (available from Bayer Material Science of PA, Pittsburgh), a PELLETHANE TPU (available from MI, Dow Chemical Company of Midland), and similar TPUs.

研磨元件可包括各種各樣的材料,其中聚合物材料較佳。適合之聚合物材料包含(例如):聚氨基甲酸酯、聚丙烯酸酯、聚乙烯醇聚酯、聚碳酸酯及可以商品名DELRIN購得(可自DE、Wilmington之E.I.DuPont de Nemours,Inc.購得)之縮醛。在某些示範性實施中,至少某些研磨元件包括一熱塑性聚胺基甲酸酯、一聚丙烯酸酯、聚乙烯醇或其組合。The abrasive elements can comprise a wide variety of materials, with polymeric materials being preferred. Suitable polymeric materials include, for example, polyurethanes, polyacrylates, polyvinyl alcohol polyesters, polycarbonates, and are commercially available under the tradename DELRIN (available from DE, Wilmington, EI DuPont de Nemours, Inc.). Acquired acetal. In certain exemplary implementations, at least some of the abrasive elements comprise a thermoplastic polyurethane, a polyacrylate, polyvinyl alcohol, or a combination thereof.

研磨元件亦可包括一加強聚合物或其他複合材料,包含(例如):金屬微粒、陶瓷微粒、聚合物微粒、纖維、其組合及類似材料。在某些實施例中,可藉由於研磨元件中包含諸如碳、石墨、金屬或其組合等填料來使其導電及/或導熱。在其他實施例中,可在存在或不在上述導電及/或導熱填料之情形下使用導電聚合物,諸如(例如)以商品名ORMECOM出售之聚苯胺(PANI)(可自Germany、Ammersbek之Ormecon Chemie購得)。The abrasive elements can also include a reinforced polymer or other composite material including, for example, metal particles, ceramic particles, polymer particles, fibers, combinations thereof, and the like. In certain embodiments, it may be made conductive and/or thermally conductive by the inclusion of a filler such as carbon, graphite, metal, or combinations thereof in the abrasive element. In other embodiments, a conductive polymer may be used in the presence or absence of the above-described conductive and/or thermally conductive filler, such as, for example, polyaniline (PANI) sold under the trade name ORMECOM (available from Ormecon Chemie of Germany, Ammersbek) Purchased).

在某些示範性實施例中,該研磨墊進一步包括與該等研磨元件相對地固定至支撐層之一順應層。該順應層可藉由接合表面之任一構件固定至該支撐層,但較佳地使用定位於該順應層與該支撐層之間的界面處之一黏合劑層將該支撐層固定至與該等研磨元件相對之順應層。In certain exemplary embodiments, the polishing pad further includes a compliant layer that is secured to the support layer opposite the abrasive elements. The compliant layer may be secured to the support layer by any of the joining surfaces, but preferably the support layer is secured to the support layer by an adhesive layer positioned at the interface between the compliant layer and the support layer The polishing element is opposite the compliant layer.

在某些實施例中,該順應層較佳地係可壓縮以在研磨期間提供朝向一工件引導該等研磨元件之研磨表面之一正壓力。在某些示範性實施例中,支撐層可包括一撓性且順應材料,諸如一順應橡膠或聚合物。在其他示範性實施例中,該支撐層較佳地係由一可壓縮聚合物材料(經發泡聚合物材料係較佳)製成。在某些實施例中,封閉室發泡體可係較佳,但在其他實施例中,可使用開放室發泡體。In certain embodiments, the compliant layer is preferably compressible to provide a positive pressure to one of the abrasive surfaces of the workpieces that are directed toward a workpiece during grinding. In certain exemplary embodiments, the support layer can comprise a flexible and compliant material such as a compliant rubber or polymer. In other exemplary embodiments, the support layer is preferably made of a compressible polymeric material (preferably via a foamed polymeric material). In some embodiments, a closed cell foam may be preferred, but in other embodiments, an open cell foam may be used.

在某些特定實施例中,順應層可包括選自聚矽氧、天然橡膠、苯乙烯-丁二烯橡膠、氯丁橡膠、聚胺基甲酸酯、聚乙烯及其組合之一聚合物材料。該順應可進一步包括各種各樣的額外材料,諸如填料、微粒、纖維、增強劑及類似材料。該順應層較佳地係液體不可滲透(儘管可滲透材料可與一選擇性障壁層結合使用以防止或抑制液體穿透至該順應層中)。In certain particular embodiments, the compliant layer can comprise a polymeric material selected from the group consisting of polyoxyn, natural rubber, styrene-butadiene rubber, neoprene, polyurethane, polyethylene, and combinations thereof. . The compliance may further include a wide variety of additional materials such as fillers, particulates, fibers, reinforcing agents, and the like. The compliant layer is preferably liquid impermeable (although the permeable material can be used in conjunction with a selective barrier layer to prevent or inhibit liquid penetration into the compliant layer).

供在順應層中使用之較佳聚合物材料係聚胺基甲酸酯,其中TPU尤其較佳。適合之聚氨基甲酸酯包含(例如):可以商品名PORON自CT、Rogers之Rogers Corp.購得之彼等聚氨基甲酸酯以及可以商品名PELLETHANE自MI、Midland之Dow Chemical購得之彼等聚氨基甲酸酯(尤其PELLETHANE 2102-65D)。其他適合之材料包含聚對苯二甲酸乙二酯(PET)(諸如,例如可以商品名MYLAR廣泛購得之雙軸定向PET)以及經接合之橡膠薄片(例如可以商品名BONDTEX自CA、Santa Ana之Rubberite Cypress Sponge Rubber Products,Inc.購得之橡膠薄片)。Preferred polymeric materials for use in the compliant layer are polyurethanes, with TPU being especially preferred. Suitable polyurethanes include, for example, those available under the trade designation PORON from CT, Rogers Corp., Rogers Corp., and those available under the trade designation PELLETHANE from MI, Midland, Dow Chemical. Polyurethane (especially PELLETHANE 2102-65D). Other suitable materials include polyethylene terephthalate (PET) (such as, for example, biaxially oriented PET, widely available under the trade name MYLAR) and bonded rubber sheets (for example, under the trade name BONDTEX from CA, Santa Ana) Rubber sheet purchased by Rubberite Cypress Sponge Rubber Products, Inc.).

在某些示範性實施例中,在一CMP製程中使用根據本發明之研磨墊具有某些優點,例如:經改良之晶圓內研磨均勻度、一較平坦之經研磨晶圓表面、自晶圓之一邊緣晶粒良率之一增加及經改良之CMP製程運作範圍及一致性。儘管不希望受任一特定理論之約束,但可由自下伏於支撐層之順應層去耦研磨元件之研磨表面來產生此等優點,藉此在一研磨製程期間當使研磨墊接觸至一工件時,允許該等研磨元件沿大致垂直於該等元件之研磨表面之一方向「浮動」。In certain exemplary embodiments, the use of a polishing pad in accordance with the present invention in a CMP process has certain advantages, such as improved in-wafer polishing uniformity, a relatively flat polished wafer surface, and self-crystallisation. One of the edge grain yields of one of the circles increases and the operating range and consistency of the improved CMP process. Although not wishing to be bound by any particular theory, such advantages may be derived by decoupling the abrasive surface of the abrasive element from the compliant layer underlying the support layer, thereby allowing the polishing pad to contact a workpiece during a polishing process Allowing the abrasive elements to "float" in a direction substantially perpendicular to one of the abrasive surfaces of the components.

在某些實施例中,可藉由將研磨物質併入至一選擇性導向板中來增強研磨元件之研磨表面自順應層之去耦,該導向板包含自一第一主表面穿過該導向板延伸至一第二主表面之複數個孔口,其中每一研磨元件之至少一部分延伸至一對應孔口中,且其中每一研磨元件均自該導向板之第二主表面向外延伸。可使用較佳地包括一剛性或非順應材料之選擇性導向板來維持研磨表面之空間定向,以及維持該等元件在研磨墊上之橫向移動。然而,在其他實施例中,不需要該選擇性導向板,此乃因藉由將研磨元件接合至支撐層(較佳地藉由將研磨元件直接熱接合至支撐層)來維持該等元件之空間定向且防止橫向移動。In some embodiments, the decoupling of the abrasive surface of the abrasive element from the compliant layer can be enhanced by incorporating the abrasive material into a selective guide plate that includes the guide from a first major surface. The plate extends to a plurality of apertures in a second major surface, wherein at least a portion of each of the abrasive elements extends into a corresponding aperture, and wherein each of the abrasive elements extends outwardly from the second major surface of the guide plate. A selective guide plate, preferably comprising a rigid or non-compliant material, can be used to maintain the spatial orientation of the abrasive surface and to maintain lateral movement of the components on the polishing pad. However, in other embodiments, the selective guide plate is not required because the elements are maintained by bonding the abrasive elements to the support layer, preferably by directly thermally bonding the abrasive elements to the support layer. Spatial orientation and prevention of lateral movement.

選擇性導向板可由各種各樣的材料製成,諸如聚合物、共聚物、聚合物摻合物、聚合物複合材料或其組合。一剛性非順應之不導電及液體不可滲透聚合物材料通常較佳,且已發現聚碳酸酯尤其有用。The selective guide sheets can be made from a wide variety of materials such as polymers, copolymers, polymer blends, polymer composites, or combinations thereof. A rigid, non-compliant non-conductive and liquid impermeable polymeric material is generally preferred, and polycarbonate has been found to be particularly useful.

在進一步實施例中,本發明之研磨墊可進一步包括覆蓋支撐層之一第一主側之至少一部分及選擇性導向板(若存在)之第一主表面之一選擇性研磨成分分佈層。該選擇性研磨成分分佈層可由各種各樣的聚合物材料製成。在某些實施例中,該選擇性研磨成分分佈層可包括至少一種親水聚合物。較佳親水聚合物包含聚胺基甲酸酯、聚丙烯酸酯、聚乙烯醇、聚甲醛及其組合。在一個特定實施例中,研磨成分層可包括較佳在約5至約60之重量百分比之一範圍中之一水凝膠材料(諸如,例如可吸收水之一親水聚胺基甲酸酯或聚丙烯酸酯)以在研磨操作期間提供一光滑表面。In a further embodiment, the polishing pad of the present invention may further comprise a selectively abrasive component distribution layer covering at least a portion of one of the first major sides of the support layer and a first major surface of the selective guide plate (if present). The selectively ground component distribution layer can be made from a wide variety of polymeric materials. In certain embodiments, the selectively ground component distribution layer can include at least one hydrophilic polymer. Preferred hydrophilic polymers include polyurethanes, polyacrylates, polyvinyl alcohols, polyoxymethylenes, and combinations thereof. In a particular embodiment, the abrasive component layer can comprise one of a hydrogel material (such as, for example, one of the absorbable water hydrophilic polyurethanes), preferably in the range of from about 5 to about 60 weight percent. Polyacrylate) to provide a smooth surface during the grinding operation.

在額外示範性實施例中,該選擇性研磨成分分佈層包括一順應材料(舉例而言,一多孔聚合物或發泡體),以在研磨操作期間當該研磨成分分佈層受到壓縮時提供朝向基板引導之一正壓力。在某些示範性實施例中,研磨成分分佈層之柔順度經選擇以小於選擇性順應層之柔順度。在某些實施例中,具有開放室或封閉室之多孔或經發泡材料可係供在一選擇性研磨成分分佈層中使用之較佳順應材料。在某些特定實施例中,該選擇性研磨成分分佈層具有介於約10%與約90%之間的孔隙率。In an additional exemplary embodiment, the selective abrasive composition distribution layer includes a compliant material (for example, a porous polymer or foam) to provide when the abrasive composition distribution layer is compressed during a grinding operation A positive pressure is directed towards the substrate. In certain exemplary embodiments, the compliance of the abrasive component distribution layer is selected to be less than the compliance of the selective compliance layer. In certain embodiments, a porous or foamed material having an open or closed chamber may be a preferred compliant material for use in a selectively abrasive component distribution layer. In certain particular embodiments, the selectively ground component distribution layer has a porosity of between about 10% and about 90%.

在某些示範性實施例中,可使該等研磨元件之研磨表面與該選擇性研磨成分分佈層之曝露之主表面齊平或凹入低於該主表面。可有利地採用此等實施例以將一工作液體(舉例而言,一研磨漿液)維持在該等研磨元件之曝露之研磨表面與一工件之間的界面處。在此等實施例中,該研磨成分分佈層可有利地經選擇以包括一材料,該材料在研磨製程期間或在與一工件接觸之前、期間或之後在施加至研磨墊之研磨表面之選擇性調節製程中受到磨蝕或腐蝕。In certain exemplary embodiments, the abrasive surface of the abrasive elements can be flush or recessed below the major surface of the selective abrasive component distribution layer. These embodiments may be advantageously employed to maintain a working fluid (e.g., a slurry) at the interface between the exposed abrasive surface of the abrasive elements and a workpiece. In such embodiments, the abrasive component distribution layer can advantageously be selected to include a material that is selective to the abrasive surface applied to the polishing pad during, during, or after the polishing process or prior to contact with a workpiece. Abrasion or corrosion during the conditioning process.

在進一步示範性實施例中,研磨成分分佈層可用以跨越正經歷研磨之基板表面大致均勻地分佈一研磨成分,此可提供更均勻研磨。研磨成分分佈層可視情況包含阻流元件(諸如,擋板、凹槽(未顯示於該等圖中)、孔及類似物)以在研磨期間調節研磨成分之流動速率。在進一步示範性實施例中,研磨成分分佈層可包含各種不同材料層以在自研磨表面之不同深度處達成所需之研磨成分流動速率。In a further exemplary embodiment, the abrasive component distribution layer can be used to distribute the abrasive component substantially evenly across the surface of the substrate being subjected to grinding, which can provide for more uniform grinding. The abrasive component distribution layer may optionally include flow blocking elements (such as baffles, grooves (not shown in the figures), holes, and the like) to adjust the flow rate of the abrasive components during milling. In a further exemplary embodiment, the abrasive component distribution layer can comprise a variety of different material layers to achieve a desired abrasive component flow rate at different depths from the abrasive surface.

在某些示範性實施例中,研磨元件中之一者或多者可包含界定於研磨元件內之一開放核心區域或腔,儘管不需要此一配置。在某些實施例中,如WO/2006/055720中所描述,研磨元件之核心可包含感測器以偵測壓力、傳導性、電容、渦電流及類似物。在再一實施例中,研磨墊可包含沿垂直於研磨表面之方向延伸穿過該墊之一窗口,或可使用透明層及/或透明研磨元件以允許一研磨製程之光學終點量測,如2008年5月15日申請之名稱為「POLISHING PAD WITH ENDPOINT WINDOW AND SYSTEMS AND METHOD OF USING THE SAME」之共同待決之美國臨時專利申請案第61/053,429號。In certain exemplary embodiments, one or more of the abrasive elements can include an open core region or cavity defined within the abrasive element, although such a configuration is not required. In certain embodiments, as described in WO/2006/055720, the core of the abrasive element can include a sensor to detect pressure, conductivity, capacitance, eddy current, and the like. In still another embodiment, the polishing pad can include a window extending through the pad in a direction perpendicular to the polishing surface, or a transparent layer and/or a transparent abrasive element can be used to allow optical endpoint measurement of a polishing process, such as The co-pending U.S. Provisional Patent Application Serial No. 61/053,429, filed on May 15, 2008, which is incorporated herein by reference.

上文所使用之術語「透明層」意欲包含包括一透明區域之一層,該透明區域可由與該層之剩餘部分相同或不同之一材料製成。在某些示範性實施例中,元件、層或區域可係透明或可藉由向材料施加熱及/或壓力而使其透明,或可將一透明材料鑄入適合地定位於一層中之一孔口中之適當位置中以形成一透明區域。在一替代實施例中,整個支撐層可係由如下之一材料製成,該材料係或可使其對在一端點偵測裝置所利用之所關注波長範圍中之能量透明。用於一透明元件、層或區域之較佳透明材料包含(例如)透明聚氨基甲酸酯。The term "transparent layer" as used above is intended to include a layer comprising a transparent region which may be made of one or the same material as the remainder of the layer. In some exemplary embodiments, the elements, layers or regions may be transparent or may be made transparent by applying heat and/or pressure to the material, or a transparent material may be cast into one of the layers suitably positioned. A suitable location in the aperture to form a transparent region. In an alternate embodiment, the entire support layer can be made of a material that is either transparent to the energy in the wavelength range of interest utilized by an endpoint detection device. Preferred transparent materials for a transparent element, layer or region comprise, for example, a transparent polyurethane.

此外,如上文所使用,術語「透明」意欲包含對在一終點量測裝置所利用之所關注波長範圍中之能量係大致透明之一元件、層及/或區域。在某些示範性實施例中,端點偵測裝置使用一個或多個電磁能量源以按紫外光、可見光、紅外光、微波、無線電波、其組合及類似物形式發射輻射。在某些實施例中,術語「透明」意指撞擊在透明元件、層或區域上之處於所關注波長之能量中之至少約25%(例如,至少約35%、至少約50%、至少約60%、至少約70%、至少約80%、至少約90%、至少約95%)從其透射。Moreover, as used above, the term "transparent" is intended to include one element, layer, and/or region that is substantially transparent to the energy in the wavelength range of interest utilized by an end point measuring device. In certain exemplary embodiments, the endpoint detection device uses one or more sources of electromagnetic energy to emit radiation in the form of ultraviolet light, visible light, infrared light, microwaves, radio waves, combinations thereof, and the like. In certain embodiments, the term "transparent" means at least about 25% (eg, at least about 35%, at least about 50%, at least about) of the energy at a wavelength of interest impinging on a transparent element, layer or region. 60%, at least about 70%, at least about 80%, at least about 90%, at least about 95%) are transmitted therefrom.

在某些示範性實施例中,支撐層係透明的。在某些示範性實施例中,至少一個研磨元件係透明的。在額外示範性實施例中,至少一個研磨元件係透明的,且黏合劑層及支撐層亦為透明的。在其他示範性實施例中,支撐層、導向板、研磨成分分佈層、至少一個研磨元件或其一組合係透明的。In certain exemplary embodiments, the support layer is transparent. In certain exemplary embodiments, at least one of the abrasive elements is transparent. In an additional exemplary embodiment, at least one of the abrasive elements is transparent and the adhesive layer and the support layer are also transparent. In other exemplary embodiments, the support layer, the guide plate, the abrasive component distribution layer, the at least one abrasive element, or a combination thereof are transparent.

本發明進一步係針對一種在一研磨製程中使用如上文所述之一研磨墊的方法,該方法包含使一基板之一表面與包括複數個研磨元件(至少某些研磨元件為多孔的)之一研磨墊的一研磨表面接觸,且使該研磨墊相對於該基板相對移動,以磨蝕該基板之表面。在某些示範性實施中,可對研磨墊表面與基板表面之間的一界面提供一工作液體。在此項技術中適合之工作液體係為已知,且可在(例如)美國專利第6,238,592 B1號、第6,491,843 B1號及WO/200233736中找到適合之工作液體。The invention further relates to a method of using a polishing pad as described above in a polishing process, the method comprising one surface of a substrate and one of a plurality of abrasive elements (at least some of the abrasive elements being porous) An abrasive surface of the polishing pad contacts and the polishing pad is relatively moved relative to the substrate to abrade the surface of the substrate. In some exemplary implementations, a working fluid can be provided to an interface between the surface of the polishing pad and the surface of the substrate. Suitable working fluid systems are known in the art, and suitable working fluids are found in, for example, U.S. Patent Nos. 6,238,592 B1, 6,491,843 B1 and WO/200233736.

在某些實施例中,製造本文中所描述之研磨墊可係相對容易且低廉。下文描述用於製造根據本發明之研磨墊之某些示範性方法的簡要揭示,該揭示並非欲為詳盡無疑的或為限制性的。因此,在其他示範性實施例中,提供製造一研磨墊之一方法,該方法包括形成複數個研磨元件,及將該等研磨元件接合至一支撐層以形成一研磨墊。在某些實施例中,將該等研磨元件接合至該支撐層可包括熱接合、或使用一接合材料來實現黏合劑接合、光化輻射接合或其組合。In certain embodiments, making the polishing pads described herein can be relatively easy and inexpensive. The following is a brief disclosure of certain exemplary methods for making a polishing pad in accordance with the present invention, which is not intended to be exhaustive or limiting. Accordingly, in other exemplary embodiments, a method of making a polishing pad is provided, the method comprising forming a plurality of polishing elements, and joining the polishing elements to a support layer to form a polishing pad. In certain embodiments, joining the abrasive elements to the support layer can include thermal bonding, or using a bonding material to effect adhesive bonding, actinic radiation bonding, or a combination thereof.

在某些實施例中,該等研磨元件係熱接合至該支撐層。舉例而言,可藉由使該支撐層之一主表面與每一研磨元件之一表面接觸以形成一接合界面,並將該等研磨元件及該支撐層加熱至該等研磨元件及支撐層一起軟化、熔化或流動的溫度,以在該接合界面處形成一接合來達成熱接合。亦可使用超聲波焊接來實現將該等研磨元件熱接合至該支撐層。在某些目前較佳之實施例中,在加熱研磨元件及支撐層之同時向該接合界面施加壓力。在進一步目前較佳之實施例中,將該支撐層加熱至大於將該等研磨元件加至的溫度之一溫度。In some embodiments, the abrasive elements are thermally bonded to the support layer. For example, a bonding interface can be formed by contacting one of the main surfaces of the support layer with one surface of each of the polishing elements, and heating the polishing elements and the support layer to the polishing elements and the support layer. The temperature of softening, melting or flowing to form a bond at the joint interface to achieve thermal bonding. Ultrasonic welding can also be used to thermally bond the abrasive elements to the support layer. In some presently preferred embodiments, pressure is applied to the joint interface while heating the abrasive element and the support layer. In a further presently preferred embodiment, the support layer is heated to a temperature greater than one of the temperatures to which the abrasive elements are applied.

在其他示範性實施例中,將研磨元件接合至支撐層涉及使用一接合材料,該接合材料在該等研磨元件與該支撐層之一主表面之間的一界面處形成一物理及/或化學結合。在某些實施例中,可使用定位於每一研磨元件與支撐層之主表面之間的接合界面處之一黏合劑來形成此一物理及/或化學結合。在其他實施例中,該接合材料可係藉由固化(舉例而言,藉由熱固化、輻射固化(例如,使用諸如紫外光、可見光、紅外光、電子束或其他輻射源之光化輻射之固化)及類似方式)來形成一接合之一材料。In other exemplary embodiments, joining the abrasive element to the support layer involves the use of a bonding material that forms a physical and/or chemical interface at an interface between the abrasive element and one of the major surfaces of the support layer. Combine. In some embodiments, one of the physical and/or chemical bonds may be formed using one of the adhesives positioned at the joint interface between each of the abrasive elements and the major surface of the support layer. In other embodiments, the bonding material can be cured by, for example, thermal curing, radiation curing (eg, using actinic radiation such as ultraviolet light, visible light, infrared light, electron beams, or other sources of radiation) Curing) and the like) to form a bonding material.

在某些實施例中,該等研磨元件中之至少某些元件係大致無孔研磨元件。在某些目前較佳之實施例中,該等研磨元件中之至少一部分可係多孔研磨元件。因此,在某些示範性實施例中,該方法包含藉由以下步驟形成該等多孔研磨元件:注射模製一氣體飽和聚合物熔體、注射模製在反應時放出一氣體以形成一聚合物之一反應性混合物、注射模製包括溶解於一超臨界氣體中之一聚合物之一混合物、注射模製在一溶劑中不相容之聚合物之一混合物、注射模製分散於一熱塑性聚合物中之多孔熱固微粒及其組合。In some embodiments, at least some of the abrasive elements are substantially non-porous abrasive elements. In some presently preferred embodiments, at least a portion of the abrasive elements can be porous abrasive elements. Accordingly, in certain exemplary embodiments, the method includes forming the porous abrasive elements by injection molding a gas-saturated polymer melt, and injection molding to evolve a gas during the reaction to form a polymer. One reactive mixture, injection molding comprising a mixture of one of the polymers dissolved in a supercritical gas, a mixture of one of the incompatible polymers by injection molding in a solvent, and injection molding dispersed in a thermoplastic polymerization. Porous thermosetting microparticles and combinations thereof.

在某些示範性實施例中,該等多孔研磨元件具有大致分佈於整個研磨元件上之孔。在其他實施例中,該等孔可大致分佈於該等多孔研磨元件之研磨表面處。在某些額外實施例中,賦予給一多孔研磨元件之研磨表面之孔隙率可(例如)藉由注射模製、壓延、機械鑽孔、雷射鑽孔、針打孔、氣體分散發泡、化學處理及其組合賦予。In certain exemplary embodiments, the porous abrasive elements have apertures that are generally distributed throughout the abrasive element. In other embodiments, the holes may be distributed substantially at the abrasive surface of the porous abrasive elements. In certain additional embodiments, the porosity imparted to the abrasive surface of a porous abrasive element can be, for example, by injection molding, calendering, mechanical drilling, laser drilling, needle drilling, gas dispersion foaming. , chemical treatment and its combination.

將理解,研磨墊無需僅包括大致相同研磨元件。因此,舉例而言,多孔研磨元件及無孔研磨元件之任一組合或配置可構成複數個多孔研磨元件。應瞭解,在某些實施例中,可有利地使用任一數目之多孔研磨元件及大致無孔研磨元件及其任一組合或配置以形成具有接合至一支撐層之浮動研磨元件之一研磨墊。It will be appreciated that the polishing pad need not include only substantially the same abrasive element. Thus, for example, any combination or arrangement of porous abrasive elements and non-porous abrasive elements can constitute a plurality of porous abrasive elements. It will be appreciated that in certain embodiments, any number of porous abrasive elements and substantially non-porous abrasive elements, any combination or arrangement thereof, may be advantageously employed to form a polishing pad having a floating abrasive element bonded to a support layer. .

在進一步示範性實施例中,該等研磨元件可經配置以形成一圖案。可有利地採用任一圖案。舉例而言,該等研磨元件可經配置以形成一二維陣列,舉例而言,一矩形、三角形或圓形研磨元件陣列。在額外示範性實施例中,該等研磨元件可包含在支撐層上配置成一圖案之多孔研磨元件及大致無孔研磨元件兩者。在某些示範性實施例中,該等多孔研磨元件可有利地相對於任何大致無孔研磨元件配置以在支撐層之主表面上形成多孔研磨元件及無孔研磨元件之任一配置。在此等實施例中,可有利地選擇該等多孔研磨元件相對於大致無孔研磨元件之數目及配置以獲得所需之研磨效能。In further exemplary embodiments, the abrasive elements can be configured to form a pattern. Any pattern can be advantageously employed. For example, the abrasive elements can be configured to form a two dimensional array, for example, an array of rectangular, triangular or circular abrasive elements. In additional exemplary embodiments, the abrasive elements can comprise both a porous abrasive element and a substantially non-porous abrasive element configured in a pattern on a support layer. In certain exemplary embodiments, the porous abrasive elements can be advantageously configured relative to any substantially non-porous abrasive elements to form any configuration of porous abrasive elements and non-porous abrasive elements on the major surface of the support layer. In such embodiments, the number and configuration of the porous abrasive elements relative to the substantially non-porous abrasive elements can be advantageously selected to achieve the desired abrasive performance.

舉例而言,在某些示範性實施例中,該等多孔研磨元件可大致接近研磨墊之一主表面之中心配置,且大致無孔研磨元件可大致接近研磨墊之主表面之周邊邊緣配置。此等示範性實施例可期望地將一工作液體(舉例而言,一磨料研磨漿液)較有效地保持在研磨墊與晶圓表面之間的接觸區中,藉此改良晶圓表面之研磨均勻度(例如,晶圓表面處減小之凹陷)以及減小CMP製程所產生之廢漿液量。此等示範性實施例亦可期望地在晶粒邊緣處提供更具侵蝕性之研磨,藉此減小或消除一邊緣脊之形成且改良良率及晶粒研磨均勻度。For example, in certain exemplary embodiments, the porous abrasive elements can be disposed generally adjacent the center of one of the major surfaces of the polishing pad, and the substantially non-porous abrasive elements can be disposed generally adjacent the peripheral edge of the major surface of the polishing pad. Such exemplary embodiments may desirably maintain a working fluid (for example, an abrasive slurry) in a contact zone between the polishing pad and the wafer surface, thereby improving uniform polishing of the wafer surface. Degree (eg, reduced depression at the surface of the wafer) and reduced amount of waste slurry produced by the CMP process. These exemplary embodiments are also desirably provided with more aggressive grinding at the edge of the die, thereby reducing or eliminating the formation of an edge ridge and improving yield and grain milling uniformity.

在其他示範性實施例中,多孔研磨元件可大致接近研磨墊之一主表面之邊緣配置,且大致無孔研磨元件可大致接近研磨墊之主表面之中心附近配置。只要歸屬於本發明之範疇內,即可涵蓋研磨元件之其他配置及/或圖案。In other exemplary embodiments, the porous abrasive element can be disposed proximate to the edge of one of the major surfaces of the polishing pad, and the substantially non-porous abrasive element can be disposed proximate to the center of the major surface of the polishing pad. Other configurations and/or patterns of the abrasive elements can be covered as long as they fall within the scope of the present invention.

在某些實施例中,該等研磨元件可藉由安置於支撐層之一主表面上而配置成一圖案。在其他示範性實施例中,可使用所需圖案之一模板將研磨元件配置成一圖案,且可在接合之前將該支撐層定位於該等研磨元件及該模板上方或下方,其中該支撐層之一主表面在一接合界面處接觸每一研磨元件。In some embodiments, the abrasive elements can be configured in a pattern by being disposed on one of the major surfaces of the support layer. In other exemplary embodiments, the abrasive element can be configured in a pattern using one of the desired patterns, and the support layer can be positioned above or below the polishing element and the template prior to bonding, wherein the support layer A major surface contacts each of the abrasive elements at a joint interface.

具有根據本發明之研磨元件之研磨墊之示範性實施例可具有能夠使其用於各種研磨應用之各種特徵及特性。在某些目前較佳之實施例中,本發明之研磨墊可尤其適於用於製造積體電路及半導體器件中之晶圓之化學機械平坦化(CMP)。在某些示範性實施例中,此發明中所描述之研磨墊可提供勝於熟悉此項技術者所已知之研磨墊之優點。An exemplary embodiment of a polishing pad having abrasive elements in accordance with the present invention can have various features and characteristics that enable it to be used in a variety of abrasive applications. In certain presently preferred embodiments, the polishing pads of the present invention are particularly suitable for use in the fabrication of integrated circuits and chemical mechanical planarization (CMP) of wafers in semiconductor devices. In certain exemplary embodiments, the polishing pads described in this invention may provide advantages over those known to those skilled in the art.

舉例而言,在某些示範性實施中,根據本發明之一研磨墊可用於將在CMP製程中所使用之一工作液體更好地保持在該墊之研磨表面與正研磨之基板表面之間的界面處,藉此改良該工作液體在增強研磨中之效率。在其他示範性實施例中,根據本發明之一研磨墊可減少或消除晶圓表面在研磨期間之凹陷及/或邊緣腐蝕。在某些示範性實施例中,在一CMP製程中使用根據本發明之一研磨墊可導致經改良之晶圓內研磨均勻度、一較平坦之經研磨晶圓表面、自晶圓之一邊緣晶粒良率之一增加及經改良之CMP製程運作範圍及一致性。For example, in certain exemplary implementations, a polishing pad in accordance with the present invention can be used to better maintain one of the working fluids used in a CMP process between the abrasive surface of the pad and the surface of the substrate being ground. At the interface, thereby improving the efficiency of the working fluid in enhancing the grinding. In other exemplary embodiments, a polishing pad in accordance with the present invention can reduce or eliminate dishing and/or edge corrosion of the wafer surface during grinding. In certain exemplary embodiments, the use of a polishing pad in accordance with the present invention in a CMP process results in improved in-wafer polishing uniformity, a relatively flat polished wafer surface, and one edge of the wafer. One of the increase in grain yield and the improved operating range and consistency of the CMP process.

在進一步示範性實施例中,使用具有根據本發明之多孔元件之一研磨墊可准許處理較大直徑晶圓同時維持所需表面均勻度程度以獲得高晶片良率,在需要調節墊表面以維持晶圓表面之研磨均勻度之前處理更多晶圓或減少處理時間及墊調節器之磨損。In a further exemplary embodiment, the use of a polishing pad having one of the porous elements in accordance with the present invention permits the processing of larger diameter wafers while maintaining the desired degree of surface uniformity to achieve high wafer yields, where adjustment of the pad surface is required to maintain Processing more wafers prior to polishing uniformity of the wafer surface or reducing processing time and pad conditioner wear.

現將參照以下非限制性實例圖解說明根據本發明之示範性研磨墊。An exemplary polishing pad in accordance with the present invention will now be illustrated with reference to the following non-limiting examples.

實例Instance

以下非限制性實例圖解說明用於製備多孔及無孔研磨元件兩者之各種方法,該等研磨元件可用於製備包括接合至一支撐層之複數個研磨元件之研磨墊。The following non-limiting examples illustrate various methods for making both porous and non-porous abrasive elements that can be used to prepare a polishing pad comprising a plurality of abrasive elements joined to a support layer.

實例1Example 1

此實例圖解說明無孔研磨元件(實例1A)及多孔研磨元件(實例1B)兩者之製備,其中孔大致分佈於整個研磨元件上。該等多孔研磨元件係藉由注射模製包括溶解於一超臨界氣體中之一聚合物之一混合物製備。This example illustrates the preparation of both a non-porous abrasive element (Example 1A) and a porous abrasive element (Example 1B) in which the pores are distributed substantially throughout the abrasive element. The porous abrasive elements are prepared by injection molding a mixture comprising one of the polymers dissolved in a supercritical gas.

選擇在210℃及3800 g的力下具有一熔融指數5之一熱塑性聚胺基甲酸酯(OH、Cleveland之Lubrizol Advanced Materials,Inc.之ESTANE ETE 60DT3 NAT 022P)。在高溫及壓力下,將熱塑性聚胺基甲酸酯小球饋送至配備有一30 mm直徑單螺釘(L/D=24:1)之一80噸MT Arburg注射模製成形機(Germany、Lossburg之Arburg GmbH)中以產生一聚合物熔體。A thermoplastic polyurethane having a melt index of 5 (OH, Cleveland Lubrizol Advanced Materials, Inc., ESTANE ETE 60DT3 NAT 022P) was selected at 210 ° C and a force of 3800 g. The thermoplastic polyurethane pellets were fed to a 80 ton MT Arburg injection molding machine equipped with a 30 mm diameter single screw (L/D = 24:1) under high temperature and pressure (Germany, Lossburg) Arburg GmbH) produces a polymer melt.

在實例1A中,將該聚合物熔體注射模製至一32腔冷澆道模具(固體注塑重量為9.2克)中以形成具有一中空內部圓柱形腔且稱重0.15克/元件之大致無孔研磨元件。In Example 1A, the polymer melt was injection molded into a 32 cavity cold runner mold (solid injection weight of 9.2 grams) to form a hollow internal cylindrical cavity and weighed approximately 0.15 grams per element. Hole grinding element.

在實例1B中,在高溫及壓力下,使用裝備有一質量脈衝定量遞送系統(可自MA、Woburn之Trexel,Inc.購得)之一Trexel SII-TR10將氮氣注射至聚合物熔體中,從而導致在該聚合物熔體中形成超臨界氮之一0.6% w/w摻和物。將該超臨界氮及聚合物熔體摻合物注射模製至該32腔冷澆道模具(固體注塑重量為9.2克)中以形成具有一中空內部圓柱形腔且稱重0.135克之多孔研磨元件,且其中孔大致分佈於整個研磨元件上。In Example 1B, nitrogen was injected into the polymer melt at a high temperature and pressure using a Trexel SII-TR10 equipped with a mass pulsed delivery system (available from Trexel, Inc. of MA, Woburn). This results in the formation of a 0.6% w/w blend of supercritical nitrogen in the polymer melt. The supercritical nitrogen and polymer melt blend was injection molded into the 32 cavity cold runner mold (solid injection weight of 9.2 grams) to form a porous abrasive element having a hollow internal cylindrical cavity and weighing 0.135 grams. And wherein the holes are distributed substantially throughout the abrasive element.

在表1中概述比較性實例1A及1B之擠製機之每一區之溫度、模製溫度、螺釘、注射、封裝壓力、模製時間及合模力。The temperature, molding temperature, screw, injection, packaging pressure, molding time, and mold clamping force of each zone of the extruders of Comparative Examples 1A and 1B are summarized in Table 1.

實例2Example 2

此實例圖解說明一多孔研磨元件之製備,其中孔僅大致分佈於該元件之研磨表面處。This example illustrates the preparation of a porous abrasive element in which the pores are only distributed substantially at the abrasive surface of the element.

如上文在實例1A中大體所描述,首先藉由注射模製在210℃及3800 g的力下具有一熔融指數5之一熱塑性聚胺基甲酸酯(OH、Cleveland之Lubrizol Advanced Materials,Inc.之ESTANE ETE 60DT3 NAT 022P)以形成量測直徑約15 mm之大體圓柱形研磨元件來製備無孔研磨元件。As generally described above in Example 1A, a thermoplastic polyurethane having a melt index of 5 at a pressure of 210 ° C and 3800 g was first injection molded (OH, Cleveland Lubrizol Advanced Materials, Inc.). ESTANE ETE 60DT3 NAT 022P) A non-porous abrasive element is prepared by forming a generally cylindrical abrasive element having a diameter of about 15 mm.

然後使用一AVIA 355 nm紫外線雷射(CA、Santa Clara之Coherent,Inc.)對一注射模製研磨元件之研磨表面進行雷射鑽孔以形成一多孔研磨元件,該雷射以一奈秒脈衝速率、15 kHz之重複率、60-80%(0.8-1.1瓦)之功率設定值及在100 mm/sec至300 mm/sec(運行總時間為29.8秒及13.2秒)之間的一掃描速率運作。The abrasive surface of an injection molded abrasive element is then laser drilled using an AVIA 355 nm ultraviolet laser (CA, Coherent, Inc. of Santa Clara) to form a porous abrasive element that is in nanoseconds. Pulse rate, repetition rate of 15 kHz, power setting of 60-80% (0.8-1.1 watts) and a scan between 100 mm/sec and 300 mm/sec (29.8 seconds and 13.2 seconds total running time) Rate operation.

實例3Example 3

此實例圖解說明無孔研磨元件(實例3A)及多孔研磨元件(實例3B)兩者之製備,其中孔僅以形成於研磨表面上之複數個通道之形式大致分佈於該元件之研磨表面處。This example illustrates the preparation of both a non-porous abrasive element (Example 3A) and a porous abrasive element (Example 3B) wherein the pores are distributed substantially only at the abrasive surface of the element in the form of a plurality of channels formed on the abrasive surface.

藉由注射模製在210℃及3800 g的力下具有一熔融指數5之一熱塑性聚胺基甲酸酯(OH、Cleveland之Lubrizol Advanced Materials,Inc.之ESTANE ETE 60DT3 NAT 022P)製備多孔研磨元件。在高溫及壓力下,將熱塑性聚胺基甲酸酯小球饋送至配備有一25 mm直徑單螺釘(L/D=24.6:1)之一Engel 100噸注射模製成形機(PA、York之Engel Machinery,Inc.)中以產生一聚合物熔體。Preparation of porous abrasive elements by injection molding at 210 ° C and 3800 g force with a melt index of 5 thermoplastic polyurethane (OH, Cleveland Lubrizol Advanced Materials, Inc. ESTANE ETE 60DT3 NAT 022P) . Feeding thermoplastic polyurethane pellets to Engel 100 ton injection molding machine (PA, York, Engel) with one 25 mm diameter single screw (L/D = 24.6:1) under high temperature and pressure Machinery, Inc.) produces a polymer melt.

將該熱塑性聚胺基甲酸酯熔體注射模製至在一個腔中配備有一有肋模具插入物且在另一腔中配備有一空白模具插入物之一2腔冷澆道模具(注塑重量為34.01克)中。該等注射模製條件概述於表2中。The thermoplastic polyurethane is melt injection molded to a one-cavity cold runner mold equipped with a ribbed mold insert in one chamber and a blank mold insert in the other chamber (injection weight is 34.01 grams). These injection molding conditions are summarized in Table 2.

圖5圖解說明可用於將研磨元件熱接合至一支撐層之方法中之一個示範性裝置。可將多個無孔研磨元件4'配置成定位於釋放層34上之模板30(參見圖3A)中之一二維陣列圖案。可將支撐層10放置於研磨元件4'之曝露之表面上方。可將釋放層34'置於支撐層10之曝露之表面上方,且可將整個總成置於一熱壓機之上臺板36與下臺板38之間。Figure 5 illustrates an exemplary apparatus that can be used to thermally bond abrasive elements to a support layer. The plurality of non-porous abrasive elements 4' can be configured to be positioned in a two-dimensional array pattern in the template 30 (see Figure 3A) on the release layer 34. The support layer 10 can be placed over the exposed surface of the abrasive element 4'. The release layer 34' can be placed over the exposed surface of the support layer 10 and the entire assembly can be placed between a platen 36 and a lower platen 38 above a heat press.

應瞭解,可改變該示範性裝置中元件之相對次序及配置,而不背離本發明之範疇。因此,舉例而言,可將支撐層10置於釋放層34上且給其上覆模板30,然後將無孔研磨元件4配置成該模板中之一二維陣列圖案,並給所配置之元件上覆釋放層34'。此外,可在任一數目、配置或組合上用多孔研磨元件4來替代無孔研磨元件4'。It will be appreciated that the relative order and configuration of elements in the exemplary device can be varied without departing from the scope of the invention. Thus, for example, the support layer 10 can be placed on the release layer 34 and overlaid on the template 30, and then the non-porous abrasive element 4 can be configured into a two-dimensional array pattern in the template and the configured components Overlying release layer 34'. Furthermore, the porous abrasive element 4 can be substituted for the non-porous abrasive element 4' in any number, configuration or combination.

實例4Example 4

實例4圖解說明將根據實例1製備之經注射模製的熱塑性聚胺基甲酸酯研磨元件熱接合至包括熱塑性聚胺基甲酸酯之一支撐層薄膜之一方法。Example 4 illustrates a method of thermally bonding an injection molded thermoplastic polyurethane abrasive element prepared according to Example 1 to one of the support layer films comprising a thermoplastic polyurethane.

研磨元件(15 mm直徑)係藉由根據實例1注射模製一熱塑性聚胺基甲酸酯(TPU)、ESTANE 58144(可自OH、Cleveland之Lubrizol Advanced Materials,Inc.購得)形成。使用如圖6中所示之一聚碳酸酯模板將該等研磨元件配置成一大體圓形之二維陣列圖案,且將其接合至一26 μm厚之支撐層,該支撐層係藉由在182℃下將一熱塑性聚胺基甲酸酯(TPU)、ESTANE 58887-NAT02(可自OH、Cleveland之Lubrizol Advanced Materials,Inc.購得)擠製成薄膜形式而形成。Abrasive elements (15 mm diameter) were formed by injection molding a thermoplastic polyurethane (TPU), ESTANE 58144 (available from OH, Cleveland Lubrizol Advanced Materials, Inc.) according to Example 1. The abrasive elements are arranged in a generally circular two-dimensional array pattern using a polycarbonate template as shown in Figure 6, and joined to a 26 μm thick support layer by 182 A thermoplastic polyurethane (TPU), ESTANE 58887-NAT02 (available from OH, Cleveland Lubrizol Advanced Materials, Inc.) was extruded into a film form at °C.

在大致如圖5中所示之一台板式熱壓機(CA、El Monte之Pasadena Hydraulics Press Company)中實施熱接合。使上臺板維持在約143.3℃下,且使下臺板維持在約26.7℃下。施加足夠之壓力以形成TPU研磨元件與TPU支撐層之間的接觸,該等TPU研磨元件與該TPU支撐層如圖5中所示定位於紙釋放襯層之間。接合在30秒後大致完成且均勻。在將TPU支撐層熱接合至TPU研磨元件後,移除紙襯層以產生具有經熱接合之TPU研磨元件之一整片透明的TPU支撐層,如在圖7中所示。Thermal bonding was carried out in a platen hot press (CA, El Monte Pasadena Hydraulics Press Company) as generally shown in FIG. The upper platen was maintained at about 143.3 ° C and the lower platen was maintained at about 26.7 ° C. Sufficient pressure is applied to form contact between the TPU abrasive element and the TPU support layer, the TPU abrasive elements being positioned between the paper release liner as shown in FIG. The joint was substantially completed and uniform after 30 seconds. After thermally bonding the TPU support layer to the TPU abrasive element, the paper liner is removed to create a TPU support layer that is one-piece transparent with one of the thermally bonded TPU abrasive elements, as shown in FIG.

實例5Example 5

實例5圖解說明將根據實例1製備之經注射模製之熱塑性聚胺基甲酸酯研磨元件熱接合至包括一不同熱塑性聚胺基甲酸酯之支撐層薄膜之一方法。Example 5 illustrates a method of thermally bonding an injection molded thermoplastic polyurethane abrasive element prepared according to Example 1 to a support layer film comprising a different thermoplastic polyurethane.

研磨元件(6 mm直徑)係根據實例1藉由注射模製一TPU(ESTANE 58212(可自OH、Cleveland之Lubrizol Advanced Materials,Inc.購得))而形成。使用一聚碳酸酯模板(圖6)將該等研磨元件配置成一大體圓形之二維陣列圖案,且將其熱接合至一122 μm厚之TPU薄膜支撐層(MA、Easthampton之Stevens Urethane ST-1522CL)。The abrasive element (6 mm diameter) was formed according to Example 1 by injection molding a TPU (ESTANE 58212 (available from OH, Cleveland Lubrizol Advanced Materials, Inc.)). The abrasive elements were arranged in a generally circular two-dimensional array pattern using a polycarbonate template (Fig. 6) and thermally bonded to a 122 μm thick TPU film support layer (MA, Estsampton's Stevens Urethane ST- 1522CL).

在大致如圖5所示之一台板式熱壓機(KS、Pittsburgh之HIX N-800單台板式壓機)中實施熱接合。使上臺板維持在約149℃下,且使下臺板維持在約26.7℃下。將40 psi(約275,790 Pa)之一壓力施加至如圖5中所示定位於紙釋放襯層之間的TPU研磨元件及TPU支撐層。接合在15秒後大致完成且均勻。在將TPU支撐層熱接合至TPU研磨元件後,移除紙襯層以產生具有經熱接合之TPU研磨元件之一整片透明的TPU支撐層。Thermal bonding was carried out in a platen hot press (KS, Pittsburgh HIX N-800 single plate press) as generally shown in FIG. The upper platen was maintained at about 149 ° C and the lower platen was maintained at about 26.7 ° C. A pressure of 40 psi (about 275,790 Pa) is applied to the TPU abrasive element and TPU support layer positioned between the paper release liners as shown in FIG. The joint was approximately completed and uniform after 15 seconds. After thermally bonding the TPU support layer to the TPU abrasive element, the paper liner is removed to produce a TPU support layer that is one-piece transparent with one of the thermally bonded TPU abrasive elements.

實例6Example 6

實例6圖解說明將根據實例1製備之經注射模製之熱塑性聚胺基甲酸酯研磨元件熱接合至包括聚酯之一支撐層薄膜之一替代方法。Example 6 illustrates an alternative method of thermally bonding an injection molded thermoplastic polyurethane abrasive element prepared according to Example 1 to a support layer film comprising one of the polyesters.

研磨元件(15 mm直徑)係根據實例1藉由注射模製一TPU(ESTANE 58144,可自OH、Cleveland之Lubrizol Advanced Materials,Inc.購得)而形成。將該等研磨元件直接配置於支撐層之一主表面上且熱接合至該支撐層,該支撐層係一102 μm厚之聚酯薄膜(MN、St.Paul之3M Thermo-Bond 615 Film,3M Company)。Grinding elements (15 mm diameter) were formed according to Example 1 by injection molding a TPU (ESTANE 58144, available from Lubrizol Advanced Materials, Inc. of OH, Cleveland). The polishing elements are directly disposed on one main surface of the support layer and thermally bonded to the support layer, which is a 102 μm thick polyester film (MN, St. Paul's 3M Thermo-Bond 615 Film, 3M) Company).

在一台板式熱壓機(CA、El Monte之Pasadena Hydraulics Press)中實施熱接合使上臺板維持在約121℃,且使下臺板維持在約26.7℃下。施加足夠之壓力以形成TPU研磨元件與支撐層之間的接觸,該等TPU研磨元件與該支撐層定位於紙釋放襯層之間。接合在20秒後大致完成且均勻。在將該支撐層熱接合至該等TPU研磨元件後,移除紙襯層以產生具有經熱接合之TPU研磨元件之一整片透明的支撐層。Thermal bonding was carried out in a plate hot press (CA, El Monte Pasadena Hydraulics Press) to maintain the upper platen at about 121 ° C and the lower platen at about 26.7 ° C. Sufficient pressure is applied to form contact between the TPU abrasive element and the support layer, the TPU abrasive elements being positioned between the support layer and the paper release liner. The joint was substantially completed and uniform after 20 seconds. After thermally bonding the support layer to the TPU abrasive elements, the paper liner is removed to create a support layer that is transparent to one of the thermally bonded TPU abrasive elements.

實例7Example 7

實例7圖解說明將根據實例1製備之經注射模製之熱塑性聚胺基甲酸酯研磨元件熱接合至包括一不同聚酯薄膜之一支撐層之方法。Example 7 illustrates a method of thermally bonding an injection molded thermoplastic polyurethane abrasive element prepared according to Example 1 to a support layer comprising a different polyester film.

研磨元件(15 mm直徑)係根據實例1藉由注射模製一TPU(ESTANE 58144,可自OH、Cleveland之Lubrizol Advanced Materials,Inc.購得)而形成。將該等研磨元件直接配置於支撐層之一主表面上且將其熱接合至該支撐層,該支撐層係一102 μm厚之聚酯薄膜(MN、St.Paul之3M Thermo-Bond 668 Film,3M Company)。Grinding elements (15 mm diameter) were formed according to Example 1 by injection molding a TPU (ESTANE 58144, available from Lubrizol Advanced Materials, Inc. of OH, Cleveland). The polishing elements are directly disposed on one of the main surfaces of the support layer and thermally bonded to the support layer, the support layer being a 102 μm thick polyester film (MN, St. Paul's 3M Thermo-Bond 668 Film) , 3M Company).

在一台板式熱壓機(KS、Pittsburgh之HIX N-800單台板式壓機)中實施熱接合。使上臺板維持在約149℃下,且使下臺板維持在約26.7℃下。將40 psi(約275,790 Pa)之一壓力施加至定位於紙釋放襯層之間的TPU研磨元件及支撐層。接合在15秒後大致完成且均勻。Thermal bonding was carried out in a plate hot press (KS, Pittsburgh HIX N-800 single plate press). The upper platen was maintained at about 149 ° C and the lower platen was maintained at about 26.7 ° C. A pressure of 40 psi (about 275,790 Pa) is applied to the TPU abrasive element and support layer positioned between the paper release liners. The joint was approximately completed and uniform after 15 seconds.

實例8Example 8

實例8圖解說明將包括接合至一支撐層之研磨元件之一整體薄膜熱接合至一順應層以形成具有浮動元件之一研磨墊之一方法。Example 8 illustrates a method of thermally bonding a monolithic film comprising one of the abrasive elements bonded to a support layer to a compliant layer to form a polishing pad having one of the floating elements.

在如實例4中所描述將TPU支撐層熱接合至TPU研磨元件後,藉由手層壓至一127 μm厚之黏合劑層(MN、St.Paul之3M Company之3M 9672轉移黏合劑)將該支撐層之與該等研磨元件相對之主表面固定至一1.59 mm厚之聚胺基甲酸酯發泡體順應層(Rogers PORON胺基甲酸酯發泡體,商品號4701-50-20062-04,自MN、Chaska之American Flexible獲得)。藉由將一壓敏黏合劑(MN、St.Paul之3M Company之3M 442DL轉移膠帶)手層壓至聚胺基甲酸酯發泡體順應層之與該等研磨元件相對之表面上來完成研磨墊。After the TPU support layer was thermally bonded to the TPU abrasive element as described in Example 4, it was laminated by hand to a 127 μm thick adhesive layer (MN, 3M Company's 3M 9672 transfer adhesive from St. Paul). The main surface of the support layer opposite to the abrasive elements is fixed to a 1.59 mm thick polyurethane foam compliant layer (Rogers PORON urethane foam, article number 4701-50-20062 -04, obtained from MN, Chaska's American Flexible). Grinding is accomplished by hand laminating a pressure sensitive adhesive (3M 442DL transfer tape from 3M Company, St. Paul) onto the surface of the urethane foam compliant layer opposite the abrasive elements. pad.

圖8係根據本發明再一示範性實施例之研磨墊之照片,該研磨墊包括接合至一支撐層之浮動研磨元件,其中該支撐層係藉助一黏合劑而固定至一順應子層,且其中一壓敏黏合劑係黏附至該順應子層之與該等研磨元件相對之一主表面。8 is a photograph of a polishing pad including a floating abrasive element bonded to a support layer, wherein the support layer is fixed to a compliant sub-layer by an adhesive, in accordance with still another exemplary embodiment of the present invention, and One of the pressure sensitive adhesives adheres to one of the major surfaces of the compliant sub-layer opposite the abrasive elements.

實例9Example 9

在該順應發泡體子層之底表面上使用轉移膠帶壓敏黏合劑將實例8之研磨墊安裝至一鋁製研磨台板。然後將具有研磨墊之研磨台板安裝於一CETR研磨機(CA、Campbell之CP-4,Center for Tribology,Inc.)中,將其置成與一金剛石研磨墊修整器(3M燒結型磨料調節器A3800)接觸且在去離子水中於各種條件(參見表1)下對其施以應力達5分鐘。The polishing pad of Example 8 was mounted to an aluminum polishing platen using a transfer tape pressure sensitive adhesive on the bottom surface of the compliant foam sublayer. The polishing platen with the polishing pad was then mounted in a CETR mill (CA, Campbell CP-4, Center for Tribology, Inc.) and placed in a diamond pad dresser (3M sintered abrasive adjustment) A3800) was contacted and stressed in deionized water under various conditions (see Table 1) for 5 minutes.

在每一測試條件後,檢查該墊有無元件脫裂,且未偵測到元件脫裂。為確定該墊是否可耐受持續之調節或磨損,在8 lbf (約3,632 gf )、60 rpm台及台板速度及10 mm振盪(4循環/分)下運行該墊直至頂部被磨破。在整個測試中,週期性地檢查該墊有無研磨元件脫裂,且未偵測到元件脫裂。測試條件概述於表3中。After each test condition, the mat was inspected for component cracking and no component cracking was detected. To determine whether the regulation of the continuous mat or tolerable wear, the 8 lb f (about 3,632 g f), run (4 cycles / min) 60 rpm table speed, and a platen 10 mm and shaken until the top of the pad is ground broken. Throughout the test, the mat was periodically inspected for the presence or absence of cracking of the abrasive element and no element cracking was detected. The test conditions are summarized in Table 3.

使用上文實施方式及實例中所提供之教示內容,可將個別多孔且視情況無孔研磨元件固定至一支撐層以提供根據本發明之各種額外實施例之研磨墊。應瞭解,根據本發明示範性實施例之研磨墊無需僅包括大致相同之研磨元件。因此,舉例而言,多孔研磨元件及無孔研磨元件之任一組合或配置可構成複數個多孔研磨元件。應瞭解,在某些實施例中,可有利地使用任一數目之多孔研磨元件及大致無孔研磨元件及其任一組合或配置以形成具有接合至一支撐層之浮動研磨元件之一研磨墊。Using the teachings provided in the above embodiments and examples, individual porous and optionally non-porous abrasive elements can be secured to a support layer to provide polishing pads in accordance with various additional embodiments of the present invention. It should be appreciated that the polishing pad in accordance with an exemplary embodiment of the present invention need not include only substantially identical abrasive elements. Thus, for example, any combination or arrangement of porous abrasive elements and non-porous abrasive elements can constitute a plurality of porous abrasive elements. It will be appreciated that in certain embodiments, any number of porous abrasive elements and substantially non-porous abrasive elements, any combination or arrangement thereof, may be advantageously employed to form a polishing pad having a floating abrasive element bonded to a support layer. .

在圖解說明一整體研磨墊之一個尤其有利之實施例中,一多腔模具可具有一回填室,其中每一腔對應於一研磨元件。複數個研磨元件(其可包含如本文中所述之多孔研磨元件及無孔研磨元件)可藉由將一適合之聚合物熔體注射模製至該多腔模具中並以相同聚合物熔體或另一聚合物熔體回填該回填室以形成一支撐層而形成。在冷卻該模具時,該等研磨元件保持固定至該支撐層,藉此藉助該支撐層形成複數個研磨元件作為一整體研磨元件薄片。In a particularly advantageous embodiment illustrating an integral polishing pad, a multi-cavity mold can have a backfill chamber, wherein each cavity corresponds to an abrasive element. A plurality of abrasive elements (which may comprise a porous abrasive element and a non-porous abrasive element as described herein) may be injection molded into a multi-cavity mold and melted with the same polymer by injection molding a suitable polymer melt Or another polymer melt is backfilled into the backfill chamber to form a support layer. Upon cooling of the mold, the abrasive elements remain fixed to the support layer whereby a plurality of abrasive elements are formed by the support layer as a unitary abrasive element sheet.

在此說明書之通篇中,無論在術語「實施例」之前是否包含術語「示範性」,提及「一個實施例」、「某些實施例」、「一個或多個實施例」或「一實施例」皆意指在本發明之某些示範性實施例之至少一個實施例中包含接合該實施例描述之一特定特徵、結構、材料或特性。因此,在此說明書之通篇的各種地方中出現諸如「在一個或多個實施例中」、「在某些實施例中」、「在一個實施例中」或「在一實施例中」未必係指本發明之某些示範性實施例之相同實施例。此外,在一個或多個實施例中,該等特定特徵、結構、材料或特性可以任一適合之方式組合。Throughout the specification, whether or not the term "exemplary" is included before the term "embodiment", reference is made to "one embodiment", "some embodiments", "one or more embodiments" or "one" The embodiment is meant to include a particular feature, structure, material, or characteristic of one of the embodiments described in connection with at least one embodiment of the invention. Therefore, it may not be necessary in various places throughout the specification, such as "in one or more embodiments", "in some embodiments", "in one embodiment" or "in an embodiment" Reference is made to the same embodiment of certain exemplary embodiments of the invention. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

儘管該說明書已詳細描述了某些示範性實施例,但應瞭解,熟悉此技術者在獲得對前文之理解時可容易想到對此等實施例之變更、變化及等效形式。因此,應理解,本發明並非將不適當地限於上文所闡明之說明性實施例。特定而言,如本文中所使用,由端點列舉之數值範圍係意欲包含歸屬於彼範圍內之所有數字(例如,1至5包括含1、1.5、2、2.75、3、3.80、4及5)。另外,假定本文中所使用之所有數字皆將由術語「約」加以修飾。此外,本文中所參照之所有出版物及專利皆以其全文引用的方式併入,其引用程度如同具體且個別地指示每一個別出版物或專利以便以引用方式併入。Although the specification has been described in detail with reference to the preferred embodiments of the embodiments of the present invention, it is understood that modifications, variations and equivalents of the embodiments are readily apparent to those skilled in the art. Therefore, it is to be understood that the invention is not limited to the illustrative embodiments set forth herein. In particular, as used herein, the numerical ranges recited by the endpoints are intended to include all numbers that are within the scope (eg, 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4 and 5). In addition, it is assumed that all numbers used herein will be modified by the term "about." In addition, all publications and patents referred to herein are hereby incorporated by reference in their entirety in their entirety in their entirety herein

已描述了各種示範性實施例。此等及其它實施例皆在下文申請專利範圍之範疇內。Various exemplary embodiments have been described. These and other embodiments are within the scope of the following patent application.

2...研磨墊2. . . Abrasive pad

2'...研磨墊2'. . . Abrasive pad

4...研磨元件4. . . Abrasive element

4'...研磨元件4'. . . Abrasive element

6...孔口6. . . Orifice

8...研磨成分分佈層8. . . Grinding component distribution layer

8'...研磨成分分佈層8'. . . Grinding component distribution layer

10...支撐層10. . . Support layer

12...黏合劑層12. . . Adhesive layer

14...研磨表面14. . . Abrasive surface

15...孔15. . . hole

16...順應層16. . . Compliance layer

18...壓敏黏合劑層18. . . Pressure sensitive adhesive layer

25...凸緣25. . . Flange

28...導向板28. . . guide plate

30...模板30. . . template

32...圖案32. . . pattern

34...釋放層34. . . Release layer

34'...釋放層34'. . . Release layer

36...上臺板36. . . Upper plate

38...下臺板38. . . Lower plate

參照附圖進一步描述本發明之示範性實施例,其中:Exemplary embodiments of the present invention are further described with reference to the accompanying drawings in which:

圖1係根據本發明一個示範性實施例之一研磨墊之一側視圖,其具有接合至一支撐層之浮動研磨元件。1 is a side elevational view of a polishing pad having a floating abrasive element bonded to a support layer, in accordance with an exemplary embodiment of the present invention.

圖2係根據本發明另一示範性實施例之一研磨墊之一側視圖,其具有接合至一支撐層之浮動研磨元件且包含一導向板。2 is a side elevational view of a polishing pad having a floating abrasive element bonded to a support layer and including a guide plate, in accordance with another exemplary embodiment of the present invention.

圖3A係使研磨元件配置成可用於製造根據本發明一個示範性實施例之一研磨墊之一圖案之一模板之一透視圖。3A is a perspective view of one of the templates of the polishing element configured to be used to fabricate one of the patterns of one of the polishing pads in accordance with an exemplary embodiment of the present invention.

圖3B係使研磨元件配置成可用於製造根據本發明一個示範性實施例之一研磨墊之一圖案之一模板之俯視圖。3B is a top plan view of a polishing element configured to be used to fabricate one of the patterns of one of the polishing pads in accordance with an exemplary embodiment of the present invention.

圖4係根據本發明另一示範性實施例之具有一多孔研磨表面之一多孔研磨元件之一透視圖。4 is a perspective view of one of the porous abrasive elements having a porous abrasive surface in accordance with another exemplary embodiment of the present invention.

圖5係一示範性接合裝置之一側視圖,其可用於根據本發明一示範性實施例之將多個研磨元件接合至一支撐層之一方法中。Figure 5 is a side elevational view of an exemplary joining device that can be used in a method of joining a plurality of abrasive elements to a support layer in accordance with an exemplary embodiment of the present invention.

圖6係顯示一模板之一影像,該模板可用於根據本發明一另外示範性實施例在將多個研磨元件接合至一支撐層之前將該等研磨元件配置成一圖案,且所形成之支撐層具有配置成一圖案之多個經接合之研磨元件。6 is a view showing an image of a template that can be used to configure a plurality of abrasive elements into a pattern and bond layers formed prior to joining the plurality of abrasive elements to a support layer in accordance with a further exemplary embodiment of the present invention. There are a plurality of joined abrasive elements configured in a pattern.

圖7係根據圖6之實施例之所形成之支撐層之一影像,其具有配置成該圖案之多個經接合之研磨元件。Figure 7 is an image of a support layer formed in accordance with the embodiment of Figure 6 having a plurality of joined abrasive elements configured in the pattern.

圖8係根據本發明再一示範性實施例之一研磨墊之一影像,該研磨墊包括接合至根據圖7之實施例之支撐層之多個浮動研磨元件,該支撐層被固定至一順應下伏層。Figure 8 is an image of an abrasive pad comprising a plurality of floating abrasive elements joined to a support layer according to the embodiment of Figure 7 in accordance with still another exemplary embodiment of the present invention, the support layer being secured to a conforming Underlying layer.

在該等圖式中,相同參考編號指示相同元件。在本文中,該等圖式並未按比例繪製,且在該等圖式中,研磨墊之組成經定尺寸以強調選定特徵。In the drawings, the same reference numerals indicate the same elements. In the present description, the drawings are not drawn to scale, and in the drawings, the composition of the polishing pad is sized to emphasize selected features.

2...研磨墊2. . . Abrasive pad

4...研磨元件4. . . Abrasive element

4'...研磨元件4'. . . Abrasive element

6...孔口6. . . Orifice

8...研磨成分分佈層8. . . Grinding component distribution layer

8'...研磨成分分佈層8'. . . Grinding component distribution layer

10...支撐層10. . . Support layer

12...黏合劑層12. . . Adhesive layer

14...研磨表面14. . . Abrasive surface

15...孔15. . . hole

16...順應層16. . . Compliance layer

18...壓敏黏合劑層18. . . Pressure sensitive adhesive layer

Claims (49)

一種研磨墊,其包括:一支撐層(10);複數個研磨元件(4),該等研磨元件中之每一者均不使用一黏合劑而熱接合至該支撐層之一主側,其中該等研磨元件包含一長形本體及一安裝凸緣,該長形本體沿垂直於一包含該研磨墊之平面之一第一方向延伸並穿過一研磨成分分佈層(8),並且該安裝凸緣自該長形本體向外延伸,並且其中該安裝凸緣嚙合該研磨成分分佈層(8)之一主側;其中該等研磨元件相對於其他研磨元件中之一者或多者之橫向移動受限制,但該等研磨元件保持可沿大致垂直於該等研磨元件之一研磨表面之一軸線移動;並且其中該等研磨元件之該等長形本體自該支撐層沿垂直於該研磨表面之該軸線延伸並突出穿過該研磨成分分佈層。 A polishing pad comprising: a support layer (10); a plurality of polishing elements (4), each of the polishing elements being thermally bonded to one of the main sides of the support layer without using an adhesive, wherein The abrasive elements comprise an elongate body and a mounting flange extending in a first direction perpendicular to a plane containing the polishing pad and passing through a polishing component distribution layer (8), and the mounting a flange extending outwardly from the elongate body, and wherein the mounting flange engages a major side of the abrasive component distribution layer (8); wherein the abrasive elements are transverse to one or more of the other abrasive elements Movement is limited, but the abrasive elements remain movable along an axis substantially perpendicular to one of the abrasive surfaces of the abrasive elements; and wherein the elongated bodies of the abrasive elements are perpendicular to the abrasive surface from the support layer The axis extends and protrudes through the abrasive component distribution layer. 如請求項1之研磨墊,其進一步包括一於該研磨成分分佈層上之導向板,其中該導向板包含自其一第一主表面延伸穿過該導向板而至一第二主表面之複數個孔口,其中每一研磨元件之至少一部分延伸至一對應孔口中,且其中每一研磨元件均自該導向板之該第二主表面向外延伸。 The polishing pad of claim 1, further comprising a guide plate on the abrasive component distribution layer, wherein the guide plate comprises a plurality of wires extending from the first major surface through the guide plate to a second major surface An aperture, wherein at least a portion of each of the abrasive elements extends into a corresponding aperture, and wherein each of the abrasive elements extends outwardly from the second major surface of the guide plate. 如請求項2之研磨墊,其中該導向板包括一聚合物、一共聚物、一聚合物摻合物、一聚合物複合材料或其組合。 The polishing pad of claim 2, wherein the guide plate comprises a polymer, a copolymer, a polymer blend, a polymer composite, or a combination thereof. 如請求項2之研磨墊,其中該導向板維持該等研磨元件沿該第一方向之定向,同時允許該等研磨元件相對於該導向板沿該第一方向獨立地平移。 The polishing pad of claim 2, wherein the guide plate maintains orientation of the abrasive elements in the first direction while allowing the abrasive elements to translate independently relative to the guide plate in the first direction. 如請求項1或2之研磨墊,其中每一研磨元件在包含該研磨成分分佈層之一平面上方沿該第一方向延伸至少約0.25mm。 A polishing pad according to claim 1 or 2, wherein each of the abrasive elements extends at least about 0.25 mm in the first direction above a plane containing the distribution of the abrasive component. 如請求項1或2之研磨墊,其中該等研磨元件中之至少某些元件具有與該研磨成分分佈層之一曝露之表面齊平之研磨表面。 The polishing pad of claim 1 or 2, wherein at least some of the abrasive elements have an abrasive surface that is flush with a surface to which one of the abrasive component distribution layers is exposed. 如請求項1或2之研磨墊,其中該研磨成分分佈層包括一可磨蝕材料,其具有小於該等研磨元件之一硬度之一硬度。 The polishing pad of claim 1 or 2, wherein the abrasive component distribution layer comprises an abradable material having a hardness that is less than one of the hardness of the one of the abrasive elements. 如請求項1或2之研磨墊,其中該研磨成分分佈層包括至少一種親水聚合物。 The polishing pad of claim 1 or 2, wherein the abrasive component distribution layer comprises at least one hydrophilic polymer. 如請求項1或2之研磨墊,其中該研磨成分分佈層包括一發泡體。 The polishing pad of claim 1 or 2, wherein the abrasive component distribution layer comprises a foam. 如請求項1或2中任一項之研磨墊,其進一步包括一順應層,在與該支撐層之該主側及該等研磨元件相對之一側上固定至該支撐層。 The polishing pad of any of claims 1 or 2, further comprising a compliant layer secured to the support layer on a side opposite the major side of the support layer and the abrasive elements. 如請求項10之研磨墊,其中該順應層係藉由在該順應層與該支撐層之間的一界面處之一黏合劑層而固定至該支撐層。 The polishing pad of claim 10, wherein the compliant layer is secured to the support layer by an adhesive layer at an interface between the compliant layer and the support layer. 如請求項10之研磨墊,其中該順應層包括選自聚矽氧、天然橡膠、苯乙烯-丁二烯橡膠、氯丁橡膠、聚胺基甲酸 酯、聚乙烯及其組合之聚合物材料。 The polishing pad of claim 10, wherein the compliant layer comprises a polymer selected from the group consisting of polyoxyn, natural rubber, styrene-butadiene rubber, neoprene, and polyaminocarboxylic acid. Polymer materials of esters, polyethylenes, and combinations thereof. 如請求項10之研磨墊,其中該研磨成分分佈層之一柔順度小於該順應層之一柔順度。 The polishing pad of claim 10, wherein one of the abrasive component distribution layers is less flexible than one of the compliant layers. 如請求項10之研磨墊,其進一步包括一壓敏黏合劑層,其相對於該複數個研磨元件固定至該順應層。 The polishing pad of claim 10, further comprising a pressure sensitive adhesive layer secured to the compliant layer relative to the plurality of abrasive elements. 如請求項10之研磨墊,其中每一研磨元件均在包含該支撐層之一平面上方沿該第一方向延伸至少約0.25mm。 The polishing pad of claim 10, wherein each of the abrasive elements extends at least about 0.25 mm in the first direction above a plane containing the support layer. 如請求項10之研磨墊,其中該等研磨元件中之至少一者包括一多孔研磨元件,其中每一多孔研磨元件均包括複數個孔。 The polishing pad of claim 10, wherein at least one of the abrasive elements comprises a porous abrasive element, wherein each of the porous abrasive elements comprises a plurality of holes. 如請求項16之研磨墊,其中大致所有該等研磨元件係多孔研磨元件。 The polishing pad of claim 16, wherein substantially all of the abrasive elements are porous abrasive elements. 如請求項16之研磨墊,其中構成每一多孔研磨元件之該等孔分佈於大致該整個多孔研磨元件上。 The polishing pad of claim 16, wherein the holes constituting each of the porous abrasive elements are distributed over substantially the entire porous abrasive element. 如請求項16之研磨墊,其中每一研磨表面之至少一部分包括該複數個孔。 The polishing pad of claim 16, wherein at least a portion of each of the abrasive surfaces comprises the plurality of apertures. 如請求項19之研磨墊,其中構成該研磨表面之該複數個孔包括複數個通道,其等具有選自由以下組成之群組之一橫截面形狀:圓柱形、三角形、矩形、梯形、半球形及其組合。 The polishing pad of claim 19, wherein the plurality of holes constituting the abrasive surface comprise a plurality of channels having a cross-sectional shape selected from the group consisting of: cylindrical, triangular, rectangular, trapezoidal, hemispherical And their combinations. 如請求項20之研磨墊,其中每一通道沿該第一方向之深度係自約100微米至約7500微米。 The polishing pad of claim 20, wherein the depth of each channel in the first direction is from about 100 microns to about 7500 microns. 如請求項20之研磨墊,其中每一通道之橫截面面積係自約75平方微米至約3×106 平方微米。The requested item 20 of the polishing pad, wherein the cross-sectional area of each channel of the system from about 75 square microns to about 3 × 10 6 square micrometers. 如請求項16之研磨墊,其中該複數個孔包括一封閉之室發泡體。 The polishing pad of claim 16, wherein the plurality of apertures comprise a closed chamber foam. 如請求項16之研磨墊,其中該複數個孔包括一開放之室發泡體。 The polishing pad of claim 16, wherein the plurality of apertures comprise an open chamber foam. 如請求項16之研磨墊,其中該複數個孔展示一單峰之孔尺寸分佈。 The polishing pad of claim 16, wherein the plurality of holes exhibit a single peak pore size distribution. 如請求項16之研磨墊,其中該複數個孔展示自約1奈米至約100微米之一平均孔尺寸。 The polishing pad of claim 16, wherein the plurality of apertures exhibit an average pore size from about 1 nanometer to about 100 micrometers. 如請求項26之研磨墊,其中該複數個孔展示自約1微米至約50微米之一平均孔尺寸。 The polishing pad of claim 26, wherein the plurality of apertures exhibit an average pore size from about 1 micrometer to about 50 micrometers. 如請求項16之研磨墊,其中該等研磨元件在該支撐層之該主側上配置成一二維陣列圖案。 The polishing pad of claim 16, wherein the abrasive elements are arranged in a two-dimensional array pattern on the major side of the support layer. 如請求項1或2之研磨墊,其中該等研磨元件中之至少某些元件經選擇以具有沿該第一方向截取之選自圓形、橢圓形、三角形、正方形、矩形及梯形之一橫截面。 The polishing pad of claim 1 or 2, wherein at least some of the elements are selected to have a shape selected from the first direction selected from the group consisting of a circle, an ellipse, a triangle, a square, a rectangle, and a trapezoid section. 如請求項1或2之研磨墊,其中該複數個研磨元件係作為一整體研磨元件薄片而與該支撐層一起形成。 A polishing pad according to claim 1 or 2, wherein the plurality of abrasive elements are formed as a unitary abrasive element sheet together with the support layer. 如請求項1或2之研磨墊,其中該等研磨元件中之至少一部分包括一熱塑性聚胺基甲酸酯、一聚丙烯酸酯、聚乙烯醇或其組合。 A polishing pad according to claim 1 or 2, wherein at least a portion of the abrasive elements comprise a thermoplastic polyurethane, a polyacrylate, polyvinyl alcohol or a combination thereof. 如請求項1或2之研磨墊,其中該等研磨元件具有自約0.1mm至約30mm之至少一個尺寸。 The polishing pad of claim 1 or 2, wherein the abrasive elements have at least one dimension from about 0.1 mm to about 30 mm. 如請求項1或2之研磨墊,其中該支撐層包括一熱塑性聚胺基甲酸酯。 A polishing pad according to claim 1 or 2, wherein the support layer comprises a thermoplastic polyurethane. 如請求項1或2之研磨墊,其中該等研磨元件中之至少一部分包括磨料微粒。 A polishing pad according to claim 1 or 2, wherein at least a portion of the abrasive elements comprise abrasive particles. 如請求項1或2之研磨墊,其中該等研磨元件在該支撐層之該主側上配置成一二維陣列圖案。 The polishing pad of claim 1 or 2, wherein the abrasive elements are arranged in a two-dimensional array pattern on the major side of the support layer. 如請求項1或2之研磨墊,其中至少一個研磨元件係透明的。 A polishing pad according to claim 1 or 2, wherein at least one of the polishing elements is transparent. 如請求項36之研磨墊,其中該支撐層係透明的。 The polishing pad of claim 36, wherein the support layer is transparent. 如請求項10之研磨墊,其中該支撐層、該導向板、該研磨成分分佈層、至少一個研磨元件或其一組合係透明的。 The polishing pad of claim 10, wherein the support layer, the guide plate, the abrasive component distribution layer, the at least one abrasive element, or a combination thereof is transparent. 如請求項11之研磨墊,其中該支撐層、該導向板、該研磨成分分佈層、該順應層、該黏合劑層、至少一個研磨元件或其一組合係透明的。 The polishing pad of claim 11, wherein the support layer, the guide plate, the abrasive component distribution layer, the compliant layer, the adhesive layer, the at least one abrasive element, or a combination thereof are transparent. 一種使用一研磨墊之方法,其包括:使一基板之一表面與如請求項1至39中任一項之一研磨墊之一研磨表面接觸;使該研磨墊相對於該基板相對移動,以磨蝕該基板之該表面。 A method of using a polishing pad, comprising: contacting a surface of a substrate with an abrasive surface of one of the polishing pads of any one of claims 1 to 39; moving the polishing pad relative to the substrate to The surface of the substrate is abraded. 如請求項40之方法,其進一步包括對該研磨墊表面與該基板表面之間的一界面提供一研磨成分。 The method of claim 40, further comprising providing an abrasive component to an interface between the surface of the polishing pad and the surface of the substrate. 一種製造一研磨墊之方法,其包括:形成複數個研磨元件;將該等研磨元件接合至一支撐層,以形成如請求項1至39中任一項之一研磨墊。 A method of making a polishing pad comprising: forming a plurality of abrasive elements; joining the abrasive elements to a support layer to form a polishing pad according to any one of claims 1 to 39. 如請求項42之方法,其進一步包括在將該等研磨元件熱接合至該支撐層之前,將該複數個研磨元件配置成一圖案。 The method of claim 42, further comprising configuring the plurality of abrasive elements in a pattern prior to thermally bonding the abrasive elements to the support layer. 如請求項43之方法,其中該等研磨元件中之至少一部分包括多孔研磨元件。 The method of claim 43, wherein at least a portion of the abrasive elements comprise a porous abrasive element. 如請求項44之方法,其中該等研磨元件中之至少一些元件包括大致無孔研磨元件。 The method of claim 44, wherein at least some of the abrasive elements comprise substantially non-porous abrasive elements. 如請求項44之方法,其中藉由以下步驟形成該等多孔研磨元件:注射模製一氣體飽和聚合物熔體、注射模製在反應時放出一氣體以形成一聚合物之一反應性混合物、注射模製包括溶解於一超臨界氣體中之一聚合物之一混合物、注射模製在一溶劑中不相容之聚合物之一混合物、注射模製分散於一熱塑性聚合物中之多孔熱固微粒及其組合。 The method of claim 44, wherein the porous abrasive elements are formed by injection molding a gas-saturated polymer melt, and injection molding releases a gas during the reaction to form a reactive mixture of a polymer, Injection molding includes a mixture of one of the polymers dissolved in a supercritical gas, a mixture of one of the incompatible polymers injection molded in a solvent, and a porous thermoset that is injection molded and dispersed in a thermoplastic polymer. Particles and combinations thereof. 如請求項44之方法,其中該等多孔聚合物元件包括大致形成於該多孔研磨元件之一研磨表面處之若干孔。 The method of claim 44, wherein the porous polymeric elements comprise a plurality of pores formed substantially at one of the abrasive surfaces of the porous abrasive element. 如請求項47之方法,其中藉由注射模製、壓延、機械鑽孔、雷射鑽孔、針打孔、氣體分散發泡、化學處理及其組合形成該等孔。 The method of claim 47, wherein the holes are formed by injection molding, calendering, mechanical drilling, laser drilling, needle drilling, gas dispersion foaming, chemical treatment, and combinations thereof. 如請求項43之方法,其中將該複數個研磨元件配置成一圖案包括將該等研磨元件配置於一模板中、將該等研磨元件配置於該支撐層上,及其組合。 The method of claim 43, wherein configuring the plurality of abrasive elements in a pattern comprises disposing the abrasive elements in a template, arranging the polishing elements on the support layer, and combinations thereof.
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