TWI386152B - Heat sink - Google Patents

Description

heat sink

The present invention relates to the field of heat transfer, and more particularly to a heat sink and a method of manufacturing the same.

With the continuous advancement of integrated circuit technology and the increasing demand for industrial applications, the electronic information industry is booming and rapid development, the application of computers has become popular, and the speed of its replacement has been accelerating. Therefore, the core component of the computer - central processing The operating frequency of the device is getting higher and higher, and the high-frequency high-speed processor is continuously introduced. However, the higher the operating frequency of the processor, the more heat it generates per unit time, and the heat accumulation will cause the temperature to rise, resulting in its running performance including The stability is degraded, so it is necessary to dissipate the heat generated in time. At present, heat dissipation has become a problem that must be solved when each generation of high-speed processors is introduced.

The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is an important component of the voltage regulation unit of the central processing unit on the computer main board, which mainly functions as a voltage regulator and a filter. Due to the increasing frequency of the central processing unit and the increasing power, a large number of capacitors are applied to the voltage regulating unit of the central processing unit, resulting in higher and higher temperature of the MOSFET, and the temperature can reach 125 ° C. As such, the performance of the central processing unit will be seriously affected, and it is necessary to dissipate the MOSFET. However, since the above MOSFET is much smaller than the components such as the central processing unit, and because of the space limitation on the computer main board, the heat sink for the MOSFET heat dissipation is required to have a small volume and good heat dissipation performance.

In view of this, it is necessary to provide a heat sink that is small in size and has good heat dissipation performance.

A heat sink comprising: a substrate having a first surface and a second surface opposite the first surface; and a plurality of carbon nanotubes, the plurality of carbon nanotubes from the first surface of the substrate Extending outward through the second surface.

A method for manufacturing a heat sink, comprising the steps of: providing a substrate; forming a plurality of carbon nanotubes on the substrate; forming a substrate at one end of the plurality of carbon nanotubes; removing the substrate to obtain a heat dissipation Device.

The heat sink comprises a substrate and a plurality of carbon nanotubes, wherein the plurality of carbon nanotubes can be used as heat sink fins of the heat sink, and the diameter of the carbon nanotubes is generally from a few nanometers to several tens of nanometers, The single carbon nanotube fins have a very high aspect ratio, generally above 10000:1, greatly increasing the heat dissipation area of the heat sink, improving the heat dissipation performance of the heat sink, and because the carbon nanotubes are small in volume, Therefore, the heat sink has a small volume while having better heat dissipation performance.

The invention will be further described in detail below with reference to the accompanying drawings.

Referring to the first embodiment, a heat sink 10 according to an embodiment of the present invention includes: a substrate 20 having a first surface 21 and a second surface 22 opposite to the first surface 21; A carbon nanotube 30, the plurality of carbon nanotubes 30 extending outwardly from the first surface 21 of the substrate 20 through the second surface 22.

The substrate 20 may be selected from a polymer material such as ruthenium rubber, polyester, polyvinyl chloride, polyvinyl alcohol, polyethylene, polypropylene, epoxy resin, polyoxymethylene, polyacetal, and the like. Or a mixture of several. The thickness of the substrate 20 should not be too thick, nor should it be too thin. Too thick is not conducive to heat dissipation. Too thin will reduce its holding force on the carbon nanotubes 30, resulting in the pouring of the carbon nanotubes 30. Preferably, the substrate 20 has a thickness of 0.1 mm to 2 mm.

In this embodiment, the plurality of carbon nanotubes 30 may adopt an array of carbon nanotubes, and each of the carbon nanotubes 30 in the array extends outward from the first surface 21 of the substrate 20 through the second surface 22, respectively. . Preferably, the plurality of carbon nanotubes 30 are parallel to one another and substantially perpendicular to the first surface 21, the bottom of which is substantially flush with or extends from the first surface 21. The height of the plurality of carbon nanotubes 30 may depend on the thickness of the substrate 20 and the amount of space in actual use. Preferably, the carbon nanotubes 30 have a height of 1 mm to 5 mm. The plurality of carbon nanotubes 30 may also be an array of carbon nanotube bundles, each of the carbon nanotube bundles having a plurality of carbon nanotubes 30 having a distance of between 100 micrometers and 1 millimeter.

Please refer to the second to sixth figures. The method for preparing the heat sink 10 according to the embodiment of the present invention includes the following steps:

In step (1), a substrate 40 is provided as shown in the third figure. The material of the substrate 40 may be selected from the group consisting of glass, ruthenium, metals, and oxides thereof. In the embodiment, the substrate 40 is a germanium substrate. Preferably, one of the substrates 40 is used for the subsequent formation of the surface of the carbon nanotubes before being polished.

Step (2), forming a plurality of carbon nanotubes 30 on the substrate 40, such as the fourth The figure shows. The method of forming the plurality of carbon nanotubes 30 on the substrate 40 in this embodiment is a chemical vapor deposition method. The steps are as follows. First, a catalyst is formed on the substrate 40, and then a carbon source gas is introduced at a high temperature to form a plurality of carbon nanotubes 30. The catalyst may be a transition metal such as iron, nickel, cobalt or palladium. The carbon source gas may be methane, ethylene, propylene, acetylene, methanol, ethanol or the like. In this embodiment, the substrate 40 is first covered with a 5 nm thick iron film (not shown) and annealed in air at 300 ° C; then in a Chemical Vapor Deposition Chamber. A plurality of carbon nanotubes 30 were grown at a temperature of 700 ° C using ethylene as a carbon source gas. The plurality of carbon nanotubes 30 obtained as described above are parallel to each other and substantially perpendicular to the substrate 40. Preferably, the height of the plurality of carbon nanotubes 30 is from 1 mm to 5 mm, and the height of the carbon nanotubes 30 can be controlled by controlling the reaction time, which is about 3 mm in this embodiment. In this step, a carbon nanotube bundle array can be grown by forming a catalyst array on the substrate 40, and the size and shape of each nanocarbon bundle can be determined by the size and shape of the region in which the catalyst is formed.

In step (3), a substrate 20 is formed at one end of the plurality of carbon nanotubes 30, as shown in the fifth figure. The plurality of carbon nanotubes 30 includes a first end 31 and a second end 32, and the first end 31 is connected to the substrate 40. The substrate 20 may be formed on either end of the plurality of carbon nanotubes 30. Here, the substrate 20 can be formed at the first end 31 of the plurality of carbon nanotubes 30 by injecting a melt or solution of the polymer material into the junction of the plurality of carbon nanotubes 30 and the substrate 40. In this embodiment, the substrate 20 is formed on the second end 32 of the plurality of carbon nanotubes 30 by immersing the second end 32 of the plurality of carbon nanotubes 30 in a molten polymer material. Rear The substrate 20 is formed by cooling at room temperature, i.e., on the second end 32 of the plurality of carbon nanotubes 30. The polymer material may be selected from one or a mixture of ruthenium rubber, polyester, polyvinyl chloride, polyvinyl alcohol, polyethylene, polypropylene, epoxy resin, polyoxymethylene, polyacetal, and the like. Polyvinyl alcohol is used in this embodiment. The thickness of the substrate 20 can be determined by the depth at which the second end 32 of the carbon nanotube 30 is immersed in the molten polymer material. Preferably, the substrate 20 has a thickness of 0.1 mm to 2 mm, which is in the embodiment. The thickness is 0.8 mm.

In step (4), the substrate 40 is removed to obtain the heat sink 10 as shown in the sixth figure. The method of removing the substrate 40 is various, such as mechanical polishing, chemical etching, etc., and the substrate 40 is removed by mechanical polishing in this embodiment.

The heat sink comprises a substrate and a plurality of carbon nanotubes, wherein the plurality of carbon nanotubes can be used as heat sink fins of the heat sink, and the diameter of the carbon nanotubes is generally from a few nanometers to several tens of nanometers, The single carbon nanotube fins have a very high aspect ratio, generally above 10000:1, greatly increasing the heat dissipation area of the heat sink, improving the heat dissipation performance of the heat sink, and because the carbon nanotubes are small in volume, Therefore, the heat sink has a small volume while having better heat dissipation performance.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

10‧‧‧ radiator

20‧‧‧Base

21‧‧‧ first surface

22‧‧‧ second surface

30‧‧‧Nano Carbon Tube

31‧‧‧ first end

32‧‧‧second end

40‧‧‧Substrate

The first figure is a schematic cross-sectional view of a heat sink structure provided by an embodiment of the present invention. The second figure is a flow chart of a method for manufacturing a heat sink provided by an embodiment of the present invention; the third figure is a schematic view of a substrate provided in the method for manufacturing the heat sink provided by the embodiment of the present invention; The schematic diagram of the carbon nanotubes formed on the substrate; the fifth diagram is a schematic diagram of the bottom of the plurality of carbon nanotubes in the fourth figure; the sixth figure is the plurality of nanocarbons in the fifth figure Schematic diagram of the tube after removal of the substrate.

10‧‧‧ radiator

20‧‧‧Base

21‧‧‧ first surface

22‧‧‧ second surface

30‧‧‧Nano Carbon Tube

Claims (7)

A method of manufacturing a heat sink, comprising the steps of: providing a substrate; forming a plurality of carbon nanotubes on the substrate; forming a substrate at one end of the plurality of carbon nanotubes; and removing the substrate. The method of manufacturing a heat sink according to claim 1, wherein the substrate is a polymer material. The method for manufacturing a heat sink according to claim 2, wherein the polymer material is ruthenium rubber, polyester, polyvinyl chloride, polyvinyl alcohol, polyethylene, polypropylene, epoxy resin, polyoxymethylene And a mixture of one or more of polyacetals. The method of manufacturing a heat sink according to claim 1, wherein the plurality of carbon nanotubes have a height of 1 mm to 5 mm. The method for manufacturing a heat sink according to claim 1, wherein the method of forming a substrate at one end of the plurality of carbon nanotubes is to immerse the plurality of carbon nanotubes away from the end of the substrate into the molten polymer. In the material. The method of manufacturing a heat sink according to claim 1, wherein the substrate has a thickness of 0.1 mm to 2 mm. The method of manufacturing a heat sink according to claim 1, wherein the method of removing the substrate is chemical etching or mechanical polishing.