TWI362430B - Apparatus and method for manufacturing a carbon nanotube - Google Patents

Apparatus and method for manufacturing a carbon nanotube Download PDF

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TWI362430B
TWI362430B TW94127472A TW94127472A TWI362430B TW I362430 B TWI362430 B TW I362430B TW 94127472 A TW94127472 A TW 94127472A TW 94127472 A TW94127472 A TW 94127472A TW I362430 B TWI362430 B TW I362430B
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cooling
reaction chamber
carbon nanotube
preparing
working substance
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TW94127472A
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TW200706685A (en
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Tsai Shih Tung
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Hon Hai Prec Ind Co Ltd
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100年.07月15日核正替換頁 13624,30 r ·» 六、發明說明: 【發明所屬之技術領域】 [0001] 本發明涉及一種奈米碳管之製備裝置及製備方法。 【先前技街】100 years. July 15th, nuclear replacement page 13624, 30 r ·» VI. Description of the invention: [Technical field of invention] [0001] The present invention relates to a device for preparing a carbon nanotube and a preparation method thereof. [Former Technology Street]

[0002] 奈米碳管係一種管狀石墨,其由曰本研究人員Iijima於 1991 年發現,請參見"Helical Microtubules of Graphitic Carbon", S Iijima, Nature, Vol. 354,P. 56 ( 1991 )。由於其具有極優異之導電、單向 導熱等性能,其引起人們對奈米碳管的廣泛關注,奈米 碳管之製備方法亦一直為科學研究之重點。 [0003] 製備奈米碳管之方法有電弧放電法(Arc Di scharge)、 雷射消熔法(Laser ablation)、化學氣相沈積法 (Chemical Vapor Deposition, CVD)等,其中 CVD 法 成長奈米碳管具有設備簡單、低成本及可大型化之優點 [0004] 典型的CVD成長奈米碳管設備包括一高溫加熱爐、一石英 爐管、一設置於石英爐管内之載舟及一設置於載舟内之 基板。製備奈米碳管時,首先於基板上沈積一催化劑層 ,然後加熱石英爐管,通入碳源氣體,在高溫狀態下碳 源氣體在催化劑層上進行反應,從而成長出奈米碳管。 此種裝置以高溫熱分解碳源氣之方式成長碳管,其反應 溫度範圍為500-1 000°C,由於奈米碳管高溫下之高反應 活性,碳管易與空氣反應,故成長反應結束後碳管不可 直接於高溫狀態下取出,而必須等到高溫爐内溫度下降 到300°C以下時才可取出。故,整個碳管製備過程中,有 094127472 表單編號A0101 第3頁/共16頁 1003256786-0 1362430 [0005] [0006] [0007] [0008] [0009] [0010] [0011] [0012] [0013] [0014] 100年.07月15日修正替括百 效反應時間較短,而用於升溫、降溫之時間較長,佔整 個製程時間80%以上,很大程度上降低奈米碳管之製備效 率,因此提高奈米碳管之製備效率尤為重要。 【發明内容】 以下將以實施方式說明一種提高奈米碳管製備效率之奈 米碳管製備裝置及製備方法。 該奈米碳管之製備裝置包括一反應腔,其改進在於於該 反應腔内或反應腔外表面處設置有一冷卻裝置。 該冷卻裝置包括一設置於該反應腔内表面處之腔體,腔 體中包含冷卻工作物質。 該冷卻裝置包括設置該於該反應腔内之多根冷卻管,冷 卻管中包含冷卻工作物質。 該冷卻裝置包括設置該於該反應腔外表面之至少一根冷 卻管,冷卻管中包含冷卻工作物質。 該冷卻工作物質流動於該冷卻裝置内。 該冷卻工作物質流動方向與反應腔中氣體流動方向相反 一種奈米碳管之製備方法,其包括以下步驟: 提供一奈米碳管製備裝置,該奈米碳管之製備裝置包括 一反應腔、一基板,其改進在於於該反應腔内或反應腔 外表面處設置有一冷卻裝置; 於該基板上沈積一催化劑層;[0002] The carbon nanotube is a tubular graphite discovered by the researcher Iijima in 1991, see "Helical Microtubules of Graphitic Carbon", S Iijima, Nature, Vol. 354, P. 56 (1991) . Due to its excellent electrical conductivity and unidirectional heat conduction, it has attracted widespread attention to carbon nanotubes. The preparation of nanocarbon tubes has also been the focus of scientific research. [0003] The method for preparing a carbon nanotube is an arc discharge method (Arc Di scharge), a laser ablation method, a chemical vapor deposition method (CVD), or the like, wherein the CVD method grows nanometer. The carbon tube has the advantages of simple equipment, low cost and large size. [0004] A typical CVD growth carbon nanotube device includes a high temperature heating furnace, a quartz furnace tube, a boat disposed in the quartz furnace tube, and a The substrate inside the boat. When preparing the carbon nanotubes, a catalyst layer is first deposited on the substrate, then the quartz furnace tube is heated, a carbon source gas is introduced, and the carbon source gas is reacted on the catalyst layer at a high temperature to grow a carbon nanotube. The device grows carbon tubes by means of high temperature thermal decomposition of carbon source gas, and the reaction temperature ranges from 500 to 1 000 ° C. Due to the high reactivity of the carbon nanotubes at high temperatures, the carbon tubes are easily reacted with air, so they grow up. After the reaction, the carbon tube cannot be taken out directly under high temperature, and must be taken out until the temperature in the high temperature furnace drops below 300 °C. Therefore, during the entire carbon tube preparation process, there are 094127472 Form No. A0101 Page 3 / Total 16 Page 1003256786-0 1362430 [0005] [0007] [0008] [0010] [0011] [0012] 0013] [0014] 100 years. July 15th, the revised alternative effect is shorter, and the time for heating and cooling is longer, accounting for more than 80% of the whole process time, which greatly reduces the carbon nanotubes. The preparation efficiency is therefore particularly important to improve the preparation efficiency of the carbon nanotubes. SUMMARY OF THE INVENTION Hereinafter, a carbon nanotube preparation apparatus and a preparation method for improving the production efficiency of a carbon nanotube will be described by way of embodiments. The carbon nanotube preparation apparatus includes a reaction chamber modified to provide a cooling device in the reaction chamber or at the outer surface of the reaction chamber. The cooling device includes a cavity disposed at an inner surface of the reaction chamber, the chamber containing a cooling working substance. The cooling device includes a plurality of cooling tubes disposed in the reaction chamber, and the cooling tube contains a cooling working substance. The cooling device includes at least one cooling tube disposed on an outer surface of the reaction chamber, the cooling tube containing a cooling working substance. The cooled working substance flows in the cooling device. The method for preparing a carbon nanotube is opposite to the direction of gas flow in the reaction chamber, and comprises the steps of: providing a carbon nanotube preparation device, wherein the preparation device of the carbon nanotube comprises a reaction chamber, a substrate, the improvement is that a cooling device is disposed in the reaction chamber or at the outer surface of the reaction chamber; a catalyst layer is deposited on the substrate;

094127472 表單编號A0101 1003256786-0 13624,30 [0015] [0016] [0017] 100年.07月15日按正替換頁 加熱反應腔至反應溫度以生長奈米碳管; 向冷卻裝置内通入冷卻工作物質,冷卻反應腔至300°C以 下以取出奈米碳管。 該冷卻裝置包括一設置於該反應腔内表面處之腔體。 [0018] 該冷卻裝置包括設置該於該反應腔内之多根冷卻管,冷 卻管中包含冷卻工作物質。094127472 Form No. A0101 1003256786-0 13624, 30 [0016] [0017] 100 years. July 15th, according to the replacement page, the reaction chamber is heated to the reaction temperature to grow the carbon nanotubes; The working substance was cooled, and the reaction chamber was cooled to below 300 ° C to take out the carbon nanotubes. The cooling device includes a cavity disposed at an inner surface of the reaction chamber. [0018] The cooling device includes a plurality of cooling tubes disposed in the reaction chamber, and the cooling tube includes a cooling working substance.

[0019] 該冷卻裝置包括設置該於該反應腔外表面之至少一根冷 卻管,冷卻管中包含冷卻工作物質。 [0020] 與先前技術相比,本奈米碳管之製備裝置及製備方法中 採用之裝置包括一冷卻裝置,該冷卻裝置中可通入冷卻 工作物質,其可快速冷卻反應腔及其中氣體,減少反應 腔内從反應溫度到可取出奈米碳管時溫度之冷卻時間, 提高製備效率。 ^ [0021] 該冷卻工作物質流動時可增強冷卻效果,進一步提高製 備效率。[0019] The cooling device includes at least one cooling tube disposed on an outer surface of the reaction chamber, and the cooling tube includes a cooling working substance. [0020] Compared with the prior art, the apparatus used in the preparation device and the preparation method of the carbon nanotube includes a cooling device, and the cooling device can pass a cooling working substance, which can rapidly cool the reaction chamber and the gas therein, The cooling time in the reaction chamber from the reaction temperature to the temperature at which the carbon nanotubes can be taken out is reduced, and the preparation efficiency is improved. [0021] The cooling working substance can enhance the cooling effect when flowing, and further improve the preparation efficiency.

[0022] 該冷卻工作物質流動方向與反應腔中氣體流動方向相反 ,由於先進入反應腔之氣體具有較高之溫度,此種方式 使冷卻工作物質與反應腔内氣體形成逆流,冷卻效果更 佳。 【實施方式】 [0023] 以下結合圖示說明一種奈米碳管製備裝置及製備方法: [0024] 請參閱第一圖及第二圖,第一實施方式之奈米碳管製備 裝置100包括一反應腔10、一設置於反應腔内之載舟30、 094127472 表單編號A0101 第5頁/共16頁 1003256786-0 1362430 100½ 07月 ί5 曰 一設置於載舟内之基板40 ' —用於加熱反應腔之加熱部 20及一冷卻裝置。反應腔10由化學性能穩定、耐高溫之 材質形成之可密封之腔體即可,材質優選石英,其兩端 分別設有一氣體入口 101及一氣體出口 1〇2;該基板40可 以爲多孔秒基板或一氣體石夕基板,对南溫並與後續步驟 中催化劑不發生化學反應或原子滲透等現象之材料均可 ,要求其表面清潔,不破壞後續反應條件。該加熱部2〇[0022] The flow direction of the cooling working substance is opposite to the flow direction of the gas in the reaction chamber. Since the gas entering the reaction chamber has a higher temperature, the cooling working substance forms a countercurrent with the gas in the reaction chamber, and the cooling effect is better. . [Embodiment] [0023] Hereinafter, a carbon nanotube preparation apparatus and a preparation method will be described with reference to the drawings: [0024] Referring to the first diagram and the second diagram, the carbon nanotube preparation apparatus 100 of the first embodiment includes a Reaction chamber 10, a boat 30, 094127472 disposed in the reaction chamber Form No. A0101 Page 5 / Total 16 pages 1003256786-0 1362430 1001⁄2 07月ίί 曰 A substrate 40' disposed in the boat - for heating reaction The heating portion 20 of the cavity and a cooling device. The reaction chamber 10 may be a sealable cavity formed of a material having stable chemical properties and high temperature resistance. The material is preferably quartz, and a gas inlet 101 and a gas outlet 1〇2 are respectively disposed at two ends thereof; the substrate 40 may be a porous second The substrate or a gas-shield substrate may be any material which has a phenomenon of no chemical reaction or atomic penetration of the catalyst in the south temperature and the subsequent step, and the surface is required to be clean without destroying the subsequent reaction conditions. The heating part 2〇

設置於反應腔10外靠近反應腔10處,其可加熱反應腔即 可,優選的,加熱部20緊密圍繞於反應腔1〇外以達到均 勻之加熱效果,使其與載舟30對應設置以達到較好之加 熱效果’更加優選的’於加熱部20與反應腔1〇之間設置 一熱導材料層80,導熱材料可採用散熱膏、導熱墊片等 ,具有較高傳熱系數,且可與加部20及反應腔1〇緊密接 觸即可,其可增加熱導效率,提供更加均勻之加熱;該 冷卻裝置包括設置於反應腔10内由反應腔10之外殼與一 管壁50構成之腔體51,該管壁50優選採用與反應腔相同 之材質,腔體51上設有一入口5〇1、一出口5〇2,藉由入 口 501可向腔體内註入冷卻工作物質,冷卻工作物質優選 水、甲醇、乙醇、丙酮、己烷、液氨、液氮之一或其混 合物,優選使冷卻工作物質處於流動狀態,如將入口 5〇1 及出口 502接入冷卻工作物質循環系統,更加優選的,調 整入口 501與502之設置位置使冷卻工作物質流動方向與 反應腔10中氣體流向相反,形成逆流,加強冷卻效果。 為避免由於管壁50外徑太大導致腔趑51中冷卻工作物質 不足以及外徑太小而浪費冷卻工作物質之冷卻能力,優 選使管壁50之外徑與反應腔10之内徑比值於〇. 5-0. 8之 094127472 表單编號A0101 第6頁/共16頁 1003256786-0 1362430 · · . 100年.07月15日修正替4頁 間。由於氣體冷凝後密度變大,會於反應腔内下沉’熱 的氣體上升’因此反應腔内頂部之熱的氣體較多’為提 向冷卻效率,可將管壁5〇靠近反應腔底部設置’從而靠 近反應腔頂部之腔體有較大空間以容納更多之冷卻工作 物質’達到更好之冷卻效果。It is disposed outside the reaction chamber 10 near the reaction chamber 10, which can heat the reaction chamber. Preferably, the heating portion 20 is closely surrounding the reaction chamber 1 to achieve a uniform heating effect, so as to be disposed corresponding to the boat 30. A heat-conducting material layer 80 is disposed between the heating portion 20 and the reaction chamber 1〇 to achieve a better heating effect. The heat-conducting material may be a heat-dissipating paste, a heat-conductive gasket, or the like, and has a high heat transfer coefficient, and It can be in close contact with the adding portion 20 and the reaction chamber 1 ,, which can increase the thermal conductivity and provide more uniform heating; the cooling device comprises a casing disposed in the reaction chamber 10 and a casing wall 50 of the reaction chamber 10 The cavity 51 is preferably made of the same material as the reaction chamber. The cavity 51 is provided with an inlet 5〇1 and an outlet 5〇2, and the inlet 501 can inject a cooling working substance into the cavity. The cooling working substance is preferably water, methanol, ethanol, acetone, hexane, liquid ammonia, liquid nitrogen or a mixture thereof, and preferably the cooling working substance is in a flowing state, such as connecting the inlet 5〇1 and the outlet 502 to the cooling working substance circulation. System, more Preferably, the inlet 501 provided to adjust the position 502 of the cooling working substance flow direction of the reaction chamber 10 opposite to the gas flow, counterflow to enhance the cooling effect. In order to avoid the cooling capacity of the cooling working substance due to the insufficient outer diameter of the tube wall 50 due to the insufficient outer diameter of the tube wall 51 and the outer diameter being too small, it is preferable to make the outer diameter of the tube wall 50 and the inner diameter of the reaction chamber 10 ratio 〇. 5-0. 8 094127472 Form No. A0101 Page 6 of 16 Page 1003256786-0 1362430 · · . 100 years. July 15th revised for 4 pages. As the density of the gas becomes larger, it will sink in the reaction chamber. 'The hot gas rises', so the hot gas at the top of the reaction chamber is more. 'To improve the cooling efficiency, the tube wall 5〇 can be placed near the bottom of the reaction chamber. 'There is a larger space for the cavity near the top of the reaction chamber to accommodate more cooling work material' for better cooling.

[0025] 請參閱第三圖及第四圖,第二實施方式之奈米碳管製備 裝置200與第一實施方式之奈米碳管製備裝置100不同之 處在於其中之冷卻裝置包括設置於反應腔10内之多根冷 卻管60。該冷卻管兩端分別設有一入口 6〇1及一出口 602 m ’藉由入口 6〇1可向冷卻管内註入冷卻工作物質,優選的 ,使冷卻工作物.質處於流動狀態,更加優選的使冷卻工 作物質流動方向與反應腔1〇中氣體流動方向相反。本實 施方式中由于使用多根冷卻管,冷卻工作物質與反應腔 中氣體有更大接觸面積,更加便於冷卻。與實施方式一 相類似,為達到充分利用冷卻裝置之冷卻效率,優選使 冷卻管60外徑與該反應腔10内徑之比值處於〇. 1-0. 25之 間。更加優選的,使反應腔1〇内頂部之冷卻管分佈密度 大於該反應腔底部之冷卻管分佈密度° [0026] 請參閱第五圖,第三實施方式之奈米碳管製備裝置300與 第一實施方式之奈米碳管製備裝置100不同之處在於其中 之冷卻裝置包括設置於反應腔10外表面處之至少一根冷 卻管70。該冷卻管70纏繞於反應腔10外表面’喪入導熱 材料層80中,其兩端設有一入口 701及一出口 702 ’藉由 入口 701可向冷卻管内通入冷卻工作物質,優選的,使冷 卻工作物質處於流動狀態,更加優選的使冷卻工作物質 094127472 表單编號Α0101 第7頁/共16頁 1003256786-0 1362430 100年.07月15日梭正替换頁 流動方向與反應腔1 0中氣體流動方向相反。本實施方式 中之冷卻管70位於加熱部20與反應腔10之間,為實現加 熱效率與冷卻效率之平衡,除採用更好之導熱材料外, 優選使該冷卻管70相鄰兩圈之間距離與該冷卻管直徑之 比值位於0. 5-2之間。[0025] Referring to the third and fourth figures, the carbon nanotube preparation apparatus 200 of the second embodiment is different from the carbon nanotube preparation apparatus 100 of the first embodiment in that the cooling apparatus includes a reaction set. A plurality of cooling tubes 60 in the chamber 10. An inlet 6〇1 and an outlet 602m′ are respectively disposed at two ends of the cooling pipe, and the cooling working substance is injected into the cooling pipe through the inlet 6〇1, and preferably, the cooling work substance is in a flowing state, and more preferably The direction of flow of the cooling working substance is opposite to the direction of gas flow in the reaction chamber 1〇. In this embodiment, since a plurality of cooling tubes are used, the cooling working substance has a larger contact area with the gas in the reaction chamber, which is more convenient for cooling. The ratio of the outer diameter of the outer diameter of the cooling tube 60 to the inner diameter of the reaction chamber 10 is between -01 and 1.25. More preferably, the distribution density of the cooling tube at the top of the reaction chamber 1 is greater than the distribution density of the cooling tube at the bottom of the reaction chamber. [0026] Please refer to the fifth figure, the carbon nanotube preparation device 300 and the third embodiment The carbon nanotube preparation apparatus 100 of one embodiment differs in that the cooling apparatus includes at least one cooling tube 70 disposed at an outer surface of the reaction chamber 10. The cooling tube 70 is wound around the outer surface of the reaction chamber 10 and is immersed in the heat conductive material layer 80. Both ends thereof are provided with an inlet 701 and an outlet 702'. The inlet 701 can pass a cooling working substance into the cooling tube. Preferably, The cooling working substance is in a flowing state, and more preferably the cooling working substance 094127472 Form No. 1010101 Page 7 / Total 16 pages 1003256786-0 1362430 100 years. July 15th Shuttle is replacing the flow direction of the page and the gas in the reaction chamber 1 0 The flow direction is reversed. The cooling pipe 70 in the present embodiment is located between the heating portion 20 and the reaction chamber 10. In order to achieve a balance between heating efficiency and cooling efficiency, in addition to using a better heat conductive material, it is preferable to make the cooling pipe 70 between two turns. 5-2之间。 The ratio of the distance between the 0. 5-2.

[0027] 以上各實施方式中之奈米碳管製備裝置中包括一冷卻裝 置,於奈米碳管生長反應完成後可向該冷卻裝置中通入 冷卻工作物質,使反應腔及其中氣體快速冷卻,提高奈 米碳管製備效率;為進一步加快冷卻速度,還可將冷卻 裝置接入冷卻工作物質循環系統;更加優選的,使冷卻 工作物質流動方向與反應腔中氣體流動方向相反,冷卻 效果更佳。 [0028] 請參閱第六圖,以上述實施方式一之奈米碳管製備裝置 100為例,本發明還提供一種奈米碳管之製備方法,其包 括以下步驟: [0029] 步驟1,提供一奈米碳管製備裝置100。 [0030] 步驟2,於基板40上沈積一催化劑層,催化劑一般爲過渡 金屬Fe ' Co ' Ni或Fe ' Co ' Ni之氧化物、或含有Fe、[0027] The carbon nanotube preparation device in the above embodiments includes a cooling device, and after the carbon nanotube growth reaction is completed, a cooling working substance can be introduced into the cooling device to rapidly cool the reaction chamber and the gas therein. To improve the preparation efficiency of the carbon nanotubes; in order to further accelerate the cooling rate, the cooling device can also be connected to the cooling working material circulation system; more preferably, the cooling working material flows in the opposite direction to the gas flow direction in the reaction chamber, and the cooling effect is further improved. good. [0028] Please refer to the sixth figure, taking the carbon nanotube preparation device 100 of the above-mentioned first embodiment as an example, the present invention also provides a method for preparing a carbon nanotube, which comprises the following steps: [0029] Step 1, provide A carbon nanotube preparation apparatus 100. [0030] Step 2, depositing a catalyst layer on the substrate 40, the catalyst is generally a transition metal Fe ' Co ' Ni or Fe ' Co ' Ni oxide, or contains Fe,

Co、Ni之合金,沈積厚度l~10nm。 [0031] 步驟3,加熱反應腔至一預定溫度,此溫度與用以生長奈 米碳管之碳源氣體有關,一般為500-1 00(TC。 [0032] 步驟4,通入碳源氣體,生長奈米碳管。 [0033] 步驟5,停止加熱,向該腔體中通入冷卻工作物質,冷卻 094127472 表單編號A0101 第8頁/共16頁 1003256786-0 1362430 100年07月15日按正替換頁 反應腔到300°C以下以取出奈米碳管。冷卻工作物質具有 較大之吸熱能力即可,優選水、甲醇、乙醇、丙酮、己 烷、液氦、液氮之一或其混合物。待冷卻工作物質吸收 一定熱量失去冷卻能力時可換上新的冷卻工作物質,更 加優選的可將冷卻裝置接入冷卻工作物質循環系統。由 於先進入反應腔内之氣體具有較高之溫度,更加優選的 使冷卻工作物質從氣體出口側流入,從氣體入口侧流出 ,冷卻工作物質與氣體形成逆流,冷卻效果更佳。The alloy of Co and Ni has a deposition thickness of l~10 nm. [0031] Step 3, heating the reaction chamber to a predetermined temperature, which is related to the carbon source gas used to grow the carbon nanotubes, generally 500-1 00 (TC. [0032] Step 4, introducing a carbon source gas [0030] Step 5, stop heating, pass cooling working substance into the cavity, cool 094127472 Form No. A0101 Page 8 / Total 16 Page 1003256786-0 1362430 Pressed on July 15, 100 The sheet reaction chamber is replaced below 300 ° C to take out the carbon nanotubes. The cooling working substance has a large heat absorption capacity, preferably one of water, methanol, ethanol, acetone, hexane, liquid helium, liquid nitrogen or The mixture can be replaced with a new cooling working substance when the cooling working material absorbs a certain amount of heat and loses the cooling capacity. More preferably, the cooling device can be connected to the cooling working material circulation system. Since the gas entering the reaction chamber first has a higher temperature More preferably, the cooling working substance flows in from the gas outlet side and flows out from the gas inlet side, and the cooling working substance forms a countercurrent with the gas, and the cooling effect is further improved.

[0034] 上述奈米碳管製備方法中之步驟1中還可採用實施方式二 或實施方式三之奈米碳管製備裝置,其操作步驟與上述 奈米碳管之製備方法相似。 [0035] 與先前技術相比,本奈米碳管之製備裝置及製備方法中 採用之裝置包括一冷卻裝置,可向該冷卻裝置中通入冷 卻工作物質,快速冷卻反應腔及其中氣體,節省冷卻時 間,提高製備效率。該冷卻工作物質流動時可增強冷卻 效果,進一步提高了製備效率。[0034] In the first step of the method for preparing a carbon nanotube, the carbon nanotube preparation device of the second embodiment or the third embodiment may be used, and the operation steps are similar to the preparation method of the above carbon nanotube. [0035] Compared with the prior art, the apparatus used in the preparation device and the preparation method of the carbon nanotube includes a cooling device, and the cooling working substance can be introduced into the cooling device to rapidly cool the reaction chamber and the gas therein, thereby saving Cooling time to improve preparation efficiency. The cooling working substance can enhance the cooling effect when flowing, and further improve the preparation efficiency.

[0036] 綜上所述,本發明確已符合發明專利之要件,遂依法提 出專利申請。惟,以上所述者僅為本發明之較佳實施方 式,自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或變化 ,皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0037] 第一圖係本發明第一實施方式奈米碳管製備裝置結構剖 面不意圖, 094127472 表單編號A0101 第9頁/共16頁 1003256786-0 1362430 100年.07月Ϊ5日:修疋替換頁 [0038] 第二圖係上述奈米碳管製備裝置沿ΙΙ-ΙΙ截面圖; [0039] 第三圖係本發明第二實施方式奈米碳管製備裝置結構剖 面示意圖; [0040] 第四圖係上述奈米碳管製備裝置沿IV-IV截面圖; [0041] 第五圖係本發明第三實施方式奈米碳管製備裝置結構示 意圖; [0042] 第六圖係發明奈米碳管製備方法流程圖。 【主要元件符號說明】[0036] In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0037] The first drawing is a schematic cross-sectional view of a carbon nanotube preparation apparatus according to a first embodiment of the present invention, 094127472 Form No. A0101 Page 9 of 16 1003256786-0 1362430 100.07 Ϊ5: Repair replacement page [0038] The second diagram is a cross-sectional view of the above-mentioned carbon nanotube preparation device along the ΙΙ-ΙΙ; [0039] The third diagram is a schematic cross-sectional view of the second embodiment of the present invention [0040] FIG. 4 is a cross-sectional view of the above-described carbon nanotube preparation apparatus taken along line IV-IV; [0041] FIG. 5 is a schematic structural view of a carbon nanotube preparation apparatus of a third embodiment of the present invention; [0042] It is a flow chart of a method for preparing a carbon nanotube. [Main component symbol description]

[0043] 反應腔:10 [0044] 加熱部:2 0 [0045] 載舟:30 [0046] 基板:40 [0047] 管壁:50 [0048] 冷卻管:60 [0049] 冷卻管:70 [0050] 導熱材料層:80 [0051] 氣體入口 : 101 [0052] 氣體出口 : 102 [0053] 入口 : 501,601,701 [0054] 出口 : 502, 602, 702 表單編號Α0101 094127472 第10頁/共16頁 1003256786-0[0043] Reaction chamber: 10 [0044] Heating portion: 2 0 [0045] Carrier boat: 30 [0046] Substrate: 40 [0047] Tube wall: 50 [0048] Cooling tube: 60 [0049] Cooling tube: 70 [ 0050] Thermally conductive material layer: 80 [0051] Gas inlet: 101 [0052] Gas outlet: 102 [0053] Entrance: 501, 601, 701 [0054] Exit: 502, 602, 702 Form No. Α 0101 094127472 Page 10 / Total 16 pages 1003256786-0

Claims (1)

13624301362430 100年07月15日梭正替換頁Shuttle page replacement page on July 15, 100 七、申請專利範圍: 1 . 一種奈米碳管之製備裝置,其包括一用以容納反應氣體之 反應腔,其改進在於該反應腔内或反應腔外表面處設置有 一冷卻裝置,其中該冷卻管分佈於反應腔頂部及底部,且 反應腔内頂部之冷卻管分佈密度大於該反應腔底部之冷卻 管分佈密度。 2.如申請專利範圍第1項所述之奈米碳管之製備裝置,其中 該冷卻裝置包括一設置於該反應腔内之管壁,該管壁與該 反應腔形成一腔體,該腔體中包含冷卻工作物質。 3 .如申請專利範圍第2項所述之奈米碳管之製備裝置 該管壁外徑與該反應腔内徑之比值範圍為0. 5-0. Σ 4 .如申請專利範圍第2項所述之奈米碳管之製備裝置 該管壁靠近該反應腔底部設置。 5 .如申請專利範圍第1項所述之奈米碳管之製備裝置 該冷卻裝置包括設置該於該反應腔内之複數根冷卻管,該 複數冷卻管中包含冷卻工作物質。 6. 如申請專利範圍第5項所述之奈米碳管之製備裝置,其中 該冷卻管外徑與該反應腔内徑之比值範圍為0. 1-0. 25。 7. 如申請專利範圍第1項所述之奈米碳管之製備裝置,其中 該冷卻裝置包括設置於反應腔外表面處之至少一根冷卻管 ,該冷卻管中包含冷卻工作物質。 8. 如申請專利範圍第7項所述之奈米碳管之製備裝置,其中 該冷卻管環繞於該反應腔表面。 9. 如申請專利範圍第8項所述之奈米碳管之製備裝置,其中 該冷卻管相鄰兩圈之間距離與該冷卻管直徑之比值範圍為 其中 其中 其中 094127472 表單編號A0101 第11頁/共16頁 1003256786-0 1362430 100年.07.月Ϊ5日修正替換百 ,--— 0. 5-2。· ' * - * ίο . 11 . 12 . 13 . 14 . 15 . 如申請專利範圍第2項·'或第5項或第7項所述之奈米碳管之 製備裝置,其中該冷卻工作物質包括水、甲醇、乙醇、丙 酿1、己烧、液氣、液氮中之一種或其混合物。 一種奈米碳管之製備方法,其包括以下步驟: 提供一奈米碳管製備裝置,該奈米碳管製備裝置包括一反 應腔、一基板,其中該反應腔内或該反應腔外表面處設置 有一冷卻裝置; 於基板上沈積一催化劑層; 加熱反應腔至一預定溫度; 向該反應腔中通入碳源氣體,生長奈米碳管; 向該冷卻裝置中通入冷卻工作物質,冷卻該反應腔至300 °C以下以取出奈米碳管。 如申請專利範圍第11項所述之奈米碳管之製備方法,其中 該冷卻裝置包括一設置於該反應腔内之管壁,該管壁與該 反應腔形成一腔體,該腔體中包含冷卻工作物質。 如申請專利範圍第11項所述之奈米碳管之製備方法,其中 該冷卻裝置包括設置該於該反應腔内之多根冷卻管,該冷 卻管中包含冷卻工作物質。 如申請專利範圍第13項所述之奈米碳管之製備方法,其中 該冷卻工作物質流動於該冷卻管内。 如申請專利範圍第11項所述之奈米碳管之製備方法,其中 該冷卻裝置包括設置於反應腔外表面處之至少一根冷卻管 ,該冷卻管中包含冷卻工作物質。VII. Patent application scope: 1. A device for preparing a carbon nanotube, comprising a reaction chamber for accommodating a reaction gas, wherein the improvement is that a cooling device is disposed in the reaction chamber or at an outer surface of the reaction chamber, wherein the cooling device The tubes are distributed at the top and bottom of the reaction chamber, and the distribution density of the cooling tubes at the top of the reaction chamber is greater than the distribution density of the cooling tubes at the bottom of the reaction chamber. 2. The apparatus for preparing a carbon nanotube according to claim 1, wherein the cooling device comprises a wall disposed in the reaction chamber, the wall forming a cavity with the reaction chamber, the chamber The body contains cooling work substances. 3. The ratio of the outer diameter of the tube wall to the inner diameter of the reaction chamber is in the range of 0. 5-0. Σ 4 as in the patent application scope. The preparation device of the carbon nanotubes is disposed near the bottom of the reaction chamber. 5. The apparatus for preparing a carbon nanotube according to claim 1, wherein the cooling device comprises a plurality of cooling tubes disposed in the reaction chamber, the plurality of cooling tubes containing a cooling working substance. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。. 7. The apparatus for preparing a carbon nanotube according to claim 1, wherein the cooling device comprises at least one cooling pipe disposed at an outer surface of the reaction chamber, the cooling tube containing a cooling working substance. 8. The apparatus for preparing a carbon nanotube according to claim 7, wherein the cooling tube surrounds the surface of the reaction chamber. 9. The apparatus for preparing a carbon nanotube according to claim 8, wherein a ratio of a distance between two adjacent turns of the cooling pipe to a diameter of the cooling pipe is wherein 094127472 form number A0101 page 11 / Total 16 pages 1003256786-0 1362430 100 years. 07. Month 5 days to replace the replacement hundred, --- 0. 5-2. · ' * - * ίο . 11 . 12 . 13 . 14 . 15 . The apparatus for preparing a carbon nanotube according to the second aspect of the invention, or the fifth or the seventh aspect, wherein the cooling working substance Including water, methanol, ethanol, propylene, hexane, liquid gas, liquid nitrogen or a mixture thereof. A method for preparing a carbon nanotube, comprising the steps of: providing a carbon nanotube preparation device, the carbon nanotube preparation device comprising a reaction chamber, a substrate, wherein the reaction chamber or the outer surface of the reaction chamber a cooling device is disposed; a catalyst layer is deposited on the substrate; the reaction chamber is heated to a predetermined temperature; a carbon source gas is introduced into the reaction chamber to grow a carbon nanotube; and the cooling working substance is introduced into the cooling device to cool The reaction chamber is below 300 ° C to take out the carbon nanotubes. The method for preparing a carbon nanotube according to claim 11, wherein the cooling device comprises a wall disposed in the reaction chamber, the tube wall and the reaction chamber forming a cavity in the cavity Contains cooling work substances. The method for preparing a carbon nanotube according to claim 11, wherein the cooling device comprises a plurality of cooling tubes disposed in the reaction chamber, the cooling tube containing a cooling working substance. The method for preparing a carbon nanotube according to claim 13, wherein the cooling working substance flows in the cooling tube. The method for preparing a carbon nanotube according to claim 11, wherein the cooling device comprises at least one cooling pipe disposed at an outer surface of the reaction chamber, the cooling tube containing a cooling working substance. 094127472 表單編號A0101 第12頁/共16頁 1003256786-0094127472 Form No. A0101 Page 12 of 16 1003256786-0
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