TWI360241B - Chip with thermoelectric function - Google Patents

Description

1360241 > « < *

TW4203PA IX. Description of the Invention: [Technical Field] The present invention relates to an integrated wafer, and more particularly to an integrated wafer having a thermoelectric cooling and heat dissipation function. [Prior Art] As the performance of various electronic devices increases, the amount of heat generated inside the electronic device also relatively increases, especially for devices having high-speed arithmetic wafers, and the heat dissipation mechanism is more important. Taking a central processing unit (CPU) as an example, when the speed and performance of the processor increase, the higher operating frequency and operating voltage will cause the temperature of the processor to rise rapidly. At present, most of the heat sink is added to the processor to reduce the heat transfer effect to maintain the normal operation of the processor. However, the heat sink has a certain volume and needs to be fixed by fasteners or screws. In addition, a heat sink paste must be applied between the heat sink and the processor to make the two in close contact. • It is worth exploring how to effectively optimize the heat dissipation mechanism of the wafer. SUMMARY OF THE INVENTION The present invention relates to an integrated wafer having a thermoelectric cooling and heat dissipating function, which itself has an active heat dissipating function, and thus can be widely fabricated into various functional wafers. 6 1360241 • i ·

• TW4203PA The present invention provides an integrated wafer of thermoelectric cooling and heat dissipation functions, comprising a substrate, a plurality of microelectronic components, and a plurality of heat dissipating units. The surface of the substrate is provided with a functional operation area and at least one heat dissipation area, wherein the heat dissipation area is adjacent to the functional operation area. The microelectronic components are disposed in the functional computing area, and the heat dissipating units are disposed in the heat dissipating region along at least one edge of the functional computing area. Each of the heat dissipating units includes a P-type thermoelectric material block and an N-type thermoelectric material block, and the N-type thermoelectric material block of a heat dissipating unit is a P-type thermoelectric material block connected to the adjacent heat dissipating unit. When a φ current sequentially passes through the heat dissipating units, the heat dissipating unit forms a plurality of heat absorbing ends on one side of the function computing area, and forms a plurality of heat releasing ends on the other side of the function computing area, thereby reducing The temperature of these microelectronic components. The present invention further provides an integrated wafer for thermoelectric cooling and heat dissipation, comprising a substrate, a plurality of microelectronic components, and a plurality of thermoelectric material regions. The surface of the substrate is provided with a functional operation area and at least one heat dissipation area, wherein the heat dissipation area is adjacent to the functional operation area. These microelectronic components are placed in the power calculation area. The thermoelectric material block is disposed in the heat dissipating area along at least one edge of the functional operation area. When a current is supplied to the thermoelectric material blocks, the thermoelectric material block forms a plurality of heat absorption ends on one side of the functional operation area, and forms a plurality of heat release ends on the other side away from the functional operation area, thereby reducing microelectronics. The temperature of the component. In order to make the above description of the present invention more comprehensible, the preferred embodiments are described below, and in conjunction with the accompanying drawings, the detailed description is as follows: 7 1360241 « , ·

TW4203PA Embodiments Please refer to FIGS. 1A to 1C for the first embodiment. FIG. 1A is a schematic diagram of an integrated wafer with thermoelectric cooling and heat dissipation function according to the embodiment of the present invention, and FIG. 1B is a first diagram. A cross-sectional view of the integrated wafer along the B-B' tangent line, and a first schematic view of the heat dissipating region of FIG. 1A. As shown in FIG. 1B, the integrated wafer 100 of the present embodiment includes a substrate 110, a plurality of microelectronic components 120, and a plurality of heat dissipation units 130. The surface φ of the substrate 110 is provided with a functional operation area 112 and at least one heat dissipation area, wherein the heat dissipation area is adjacent to the functional operation area 112. This embodiment is illustrated by two heat dissipation regions 114, 116 that are symmetric and adjacent to the functional operation region 112. Microelectronic component 120 is disposed in functional computing area 112. The microelectronic component 120 includes, for example, a semiconductor component, which may be one or any combination of a transistor, a resistive component, a capacitive component, a diode, and the like. The heat dissipation unit 130 is disposed in the heat dissipation regions 114, 116 along the edge of the power operation region 112. As shown in FIG. 1C, each heat dissipating unit 130 includes a P-type thermoelectric material block and an N-type thermoelectric material block, and an N-type thermoelectric material block of a heat dissipating unit 130 is connected to an adjacent heat dissipating unit. 130 P-type thermoelectric material block. The heat dissipation unit 130 is disposed, for example, in a horizontal row in the heat dissipation region 114 (or the heat dissipation region 116). The material of the P-type thermoelectric material block and the N-type thermoelectric material block of each heat dissipation unit 130 is, for example, a semiconductor material, a semi-metal element or a compound having a high thermoelectric figure of merit. When a current is applied to a line formed by two different thermoelectric material blocks, if one of the contacts is exothermic, the other contact will generate an endotherm. 8 1360241 # » · ·

* The case of TW4203PA. Therefore, when a current flows through the heat dissipating units 130 in sequence, the heat dissipating unit 130 forms a plurality of heat absorbing ends 130A on one side of the function computing area 112, and forms a plurality of heat sinking ends 130A on the other side of the function computing area 112. Exothermic end 130B. As a result, as indicated by the arrows in FIG. 1B, the heat generated by the microelectronic component 120 in the functional operation area 112 will be taken away from the two heat dissipation regions 114, 116, thereby reducing the functional operation. The temperature of the microelectronic element 120 in region 112. As shown in FIG. 1C, the integrated wafer 100 includes a plurality of first conductive φ elements 141 and a plurality of second conductive elements 142, wherein the first conductive elements 141 are P-type thermoelectric material regions for connecting the heat dissipation units 130. The block and the N-type thermoelectric material block, and the second conductive element 142 is a P-type thermoelectric material block for connecting the N-type thermoelectric material block of each heat dissipation unit 130 and the adjacent heat dissipation unit 130. Further, the first conductive member 141 is located at the heat releasing end 130B, and the second conductive member 142 is located at the heat absorbing end 130A. Since the first conductive element H1 is located at the heat releasing end 130B, it is preferable that the first conductive element 141 has a large volume to speed up the self-discharge of the integrated type wafer 100. The material of the first conductive member 141 and the second conductive member 142 is, for example, a conductive material such as gold or copper. Further, in addition to the single-column P-type thermoelectric material block and the N-type thermoelectric material block as shown in Fig. 1C, the thermoelectric material block can have a larger distribution range and other arrangement. Referring to Fig. 2, there is shown a schematic view of the heat dissipating unit of the first embodiment disposed in an array in a heat dissipating area. As shown in FIG. 2, the heat dissipating units 130 are arranged in an array in the heat dissipating area, wherein the heat releasing end 130B of one row of the heat dissipating units 130 is adjacent to 9 1360241 I * *

The TW4203PA is adjacent to the heat absorbing end 130A of the adjacent column heat dissipating unit 130, that is, the second conductive member 142 on the heat releasing end 130B between the columns and columns is disposed corresponding to the first conductive member 141 on the heat absorbing end 130A. As such, the heat of the functional computing region 112 is directed to the heat sink regions 114, 116 and will be directed out of the substrate 110 by the heat sink regions 114, 116 to effectively reduce the temperature of the wafer 100. Please refer to FIG. 3A and FIG. 3B, which are schematic diagrams showing the heat dissipation end of one row of heat dissipation units extending to the heat absorption end of the adjacent column heat dissipation unit. Preferably, the first electrically conductive element at the exothermic end between the columns and columns has an extension extending to the adjacent endothermic end. As shown in FIG. 3A, the first conductive member 141' located between the two rows of heat dissipating units 130 is a T-shaped structure having an extending portion 141A' extending to the adjacent second conductive member 142. Not in contact. In addition, as shown in FIG. 3B, the extending portion 141A" of the first conductive member 14A may also be triangular. Referring to FIG. 4A, a cross-sectional view of the first conductive member extending outside the insulating layer is illustrated. Preferably, The substrate 110 is covered with an insulating layer 150 in the process to protect the microelectronic component 120 on the substrate 110 and the P-type thermoelectric material block and the N-type thermoelectric material block of the heat dissipation unit 130, so that the heat release end can be The first conductive member 141 of 130B (see FIG. 1C) extends outside the insulating layer 150 to form a protruding end 141C for contacting the outside atmosphere to dissipate heat to the outside of the wafer 100. Referring to FIG. 4B, a cross-sectional view of the first conductive member having a fin structure is illustrated. The protruding end 141C' of the first conductive member 141 extending outside the insulating layer 150 is preferably a fin structure. Structural design 1360241 I · ·

The TW4203PA increases the area in which the projecting end 141C' contacts the outside world, so that the temperature can be lowered more quickly. Since the microelectronic component 120 includes a semiconductor component, and the P-type thermoelectric material block and the N-type thermoelectric material block of each heat dissipation unit 130 are made of a semiconductor material, the heat dissipation unit 130 and the microelectronic component 120 are disposed in the same manner. On the surface of the substrate 110, the process of each of the heat dissipation units 130 and the conductive elements 141, 142 on the integrated wafer 100 can be integrated into the process (semiconductor process) of the microelectronic device 120. And only need to be made according to the kind of the microelectronic component 120, and the arrangement order of the P/N type thermoelectric material block and the conductive elements 141, 142 can be arranged in the process of the microelectronic component 120 and the heat dissipation unit 130 and The conductive elements 141, 142 are completed. In this way, the finished integrated wafer has the effect of self-heating without adding additional process costs. Embodiment 2 The difference between the second embodiment and the first embodiment is that the whole wafer of the second embodiment can adjust the size of the heat dissipation area of the second embodiment, so that the same component parts will not be described again. Referring to FIG. 5, a schematic view of a heat dissipating region of an integrated wafer having a thermoelectric cooling and dissipating function according to a second embodiment of the present invention is shown. The integrated wafer of the second embodiment further includes a plurality of switching elements 260 in the heat dissipation region 214 (only the switching elements 260(1) to 260(15) are shown for simplicity of illustration), and the switching elements 260 are connected. Two adjacent P-type thermoelectric material blocks and N-type thermoelectric material blocks* are used to selectively turn on or cut off different heat dissipation units 230 (only heat dissipation unit 230(1) 1360241 I ·

A connection between TW4203PA and 230(4)) to adjust the heat dissipation range of the heat sink region 214. Herein, part of the switching element 260 is a P-type thermoelectric material block and an N-type thermoelectric material block connected to a heat dissipation unit 230, and a part of the switching element 260 is an N-type thermoelectric material block connected to a heat dissipation unit 230. P-type thermoelectric material block adjacent to the heat dissipation unit 230. The switching element 260 may be a semiconductor element, for example, a transistor having a 1/0 switching characteristic, which can be turned on under appropriate voltage conditions. In addition, the P-type thermoelectric material block of each of the heat dissipation units 230 is connected to a first electric drive line 271, and the N-type thermoelectric material block is connected to a second electric drive line 272. A portion of the switching element 260 is coupled between the P-type thermoelectric material block and the first power drive line 271, and a portion of the switching element 260 is coupled between the N-type thermoelectric material block and the second power drive line -272. In the present embodiment, the current direction flows, for example, from the first electric drive line 271 to the respective heat dissipating units, and flows out of the second electric drive line 272. a first conductive member 241 (1) to 241 (4) having a first conductive member 241 (1) to 241 (4), each having a first conductive member 2411 and a second conductive member 2412, wherein The electrical conductor 2411 is connected to the P-type thermoelectric material block, the second electrical conductor 2412 is connected to the N-type thermoelectric material block, and the first electrical conductor 2411 and the second electrical conductor 2412 have a gap therebetween. Please refer to FIG. 6 , which is a schematic diagram showing the heat dissipation unit of the portion of FIG. 5 being turned on. When the switching elements 260(5), 260(6), 260(8), 260(10), and 260(11) are turned on, the first power driving line 27 is provided with heat dissipation units 230(2), 230(3) and The two electric drive lines 272 form a loop. At this time, heat and heat are generated between the contacts of the circuit. Since there is only a heat sink 12 1360241 • ·,

The TW4203PA elements 230(2), 230(3) are turned on, and the heat is removed by the first conductive elements 241(2), 241(3) of the heat releasing end, and the heat radiating area 214 partially has a heat dissipating function. Thus, by the setting of the switching element 260, the range of the heat dissipation region 214 can be adjusted as needed. Please refer to FIG. 7 , which is a schematic diagram showing the heat dissipating unit of the second embodiment disposed in an array in a heat dissipation area. The heat dissipation units 230 are arranged in an array form in the first column heat dissipation unit 230R1 to the Nth column heat dissipation unit 230RN. The switching element 260 is disposed between any two adjacent P-type thermoelectric material blocks and the N-type thermoelectric material block, between the P-type thermoelectric material block and the first-electric power driving line 271, and the N-type thermoelectric material region. The position between the block and the younger-electric drive line 272. The heat dissipation range of the heat sink region 214 can be determined by appropriately turning on the switching element 260 at the selected position. The first conductive member between the columns and the columns, for example, the first conductive member 241' of the heat releasing end of the first row heat radiating unit 230R1, may be designed to have an extending portion 241A' extending to the heat absorbing end of the second column heat radiating unit 230R2. As for the first conductive element 241 of the Nth column heat radiating unit 230R1 (located in the outermost row), it may have a large volume to increase the area in contact with the outside. Preferably, the integrated wafer of the present embodiment can be combined with a control unit (or a driving circuit) and a sensing unit to more flexibly adjust the heat dissipation mechanism of the heat dissipation region 214. The control unit and the sensing unit can be fabricated on a substrate of the integrated wafer, wherein the sensing unit is for sensing the temperature of the heat sink 214, and the control unit is coupled to the sensing unit and all of the aforementioned switching elements 260. Therefore, when the sensing unit detects the temperature change of the heat dissipation region 214, the control unit can selectively actuate the switching element 260 to regulate 13 1360241 • .

The heat dissipation range of the TW4203PA heat sink area 214. For example, when the sensing unit detects that the function computing area locally generates a high temperature, the control unit can perform a heat dissipation function by controlling the switching element to turn on the heat dissipation unit corresponding to the high temperature region. It is worth mentioning that * because the thermoelectric material itself has a reversible reaction with the temperature difference and the electric 5, it is possible to place two sets of open circuit switches in at least one heat dissipating unit closest to the functional operation area in the heat dissipation area 214. Then, the two sets of open circuit switches are connected to a sensing circuit. When the heat dissipating unit is disconnected from the original control unit and the surrounding heat dissipating unit, and the path is formed with the sensing circuit, the heat dissipating unit is converted into a sensing unit to provide a temperature sensing function. Embodiment 3 The integrated wafer of the third embodiment is different from the first embodiment in that the outline of the functional operation area and the setting of the heat dissipation area are the same parts, and will not be described again. Please refer to FIG. 8 , which is a schematic diagram of an integrated wafer with thermoelectric cooling and heat dissipation function according to Embodiment 3 of the present invention. The functional computing area 312 on the substrate 310 of the integrated wafer ® 300 has curved edges along which the heat dissipating unit 330 located in the heat sinking zone 314 is disposed. The heat dissipating unit 330 is a heat absorbing end (cold end) at one end of the function computing area 312, and a heat releasing end (hot end) at the other end of the function computing area 312, thereby transferring heat from the substrate 310 toward the base. The direction outside the material 310 is dissipated. In other embodiments, the functional computing area may have other different edge shape designs depending on wafer performance or structural conditions, etc., as long as it is 14 1360241 • ·

The TW4203PA heat sink unit is placed around the functional computing area and is subject to the scope of the present invention. Embodiment 4 Referring to Figure 9, there is shown a schematic diagram of an integrated wafer having a thermoelectric cooling and heat dissipation function according to a fourth embodiment of the present invention. The integrated wafer 400 includes a substrate 410, a plurality of microelectronic components 420, and a plurality of thermoelectric material blocks. The surface of the substrate 410 is provided with a functional operation area 412 and at least one heat dissipation area 414, wherein the heat dissipation area 414 is adjacent to the functional operation area 412. The thermoelectric material block is disposed in the heat dissipation region 414 along at least one edge of the functional operation region 412. When a current is supplied to the thermoelectric material blocks, the thermoelectric material block forms a plurality of heat absorption ends on one side of the functional operation area 412, and forms a plurality of heat release ends on the other side away from the functional operation area 412. The temperature of the low microelectronic component 420. As shown in Figure 9, these thermoelectric material blocks are N-type thermoelectric materials blocks. In addition, the N-type thermoelectric material blocks are electrically connected in parallel. When the current is passed, an endothermic effect is generated under the N-type thermoelectric material block to form a cold end, and a heat dissipation effect is formed on the upper side to form a hot end, so that heat is transferred from the functional operation area 412 to the heat dissipation area 414 (or outward) The direction of the escape is that the integrated wafer 400 itself has a heat-dissipating heat-dissipating function. These N-type thermoelectric material blocks can also be connected in series by means of a series connection. Please refer to Fig. 10. In addition, although the embodiment is described by taking an N-type thermoelectric material block as an example, in other embodiments, it may also be 15 1360241 * · ·

The TW4203PA uses a P-type thermoelectric material block. The P-type thermoelectric material blocks can also be electrically connected in parallel or in series. The integrated wafer with thermoelectric cooling and heat dissipating function disclosed in the above embodiments of the present invention can be a variety of different functional chips, in particular, a chip capable of providing high-speed operation or high-power operation, such as a central processing unit (CPU) of a computer. Or the source driver 1C of the liquid crystal display, and can be combined with packaging technologies such as wire bonding, solder ball (BGA) or flip chip (COF). The integrated wafer of the present invention integrates the heat dissipating unit directly onto the substrate of the wafer, so that the wafer itself has the function of active heat dissipation. The heat dissipating unit is disposed along the periphery of the functional operation area of the wafer to guide heat generated on the wafer to the outside of the wafer. Since the P/N type thermoelectric material block of the heat dissipating unit can be fabricated in the process of microelectronic components on the wafer, it does not increase the process cost. In addition, the heat dissipating units can be arranged in an array to provide a one-dimensional or two-dimensional heat dissipation effect of the wafer, and can more flexibly adjust the heat dissipation range of the heat dissipation area. In addition, the integrated heat-dissipating unit disclosed in the present invention has an internal heat-dissipating unit designed in addition to the P/N combination described above, and a single N- or P-type thermoelectric material may be used to provide heat dissipation for the wafer. purpose. In this way, a plurality of P-type or N-type thermoelectric materials are connected in parallel or in series, and an electric current is applied, so that one end of the thermoelectric material is a hot end and the other end is a cold end, thereby generating an endothermic heat release. The phenomenon. In the above, the present invention has been disclosed in the above preferred embodiments, but it is not intended to limit the present invention. The invention has the usual 16 1360241 • ·

TW4203PA Knowledge-holders can make various changes and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims. 17 1360241

TW4203PA [Simple Description of the Drawings] Fig. 1A is a schematic view showing an integrated wafer having a thermoelectric cooling and heat dissipating function according to an embodiment of the present invention. Fig. 1B is a cross-sectional view showing the integrated wafer of Fig. 1A taken along the line B-B'. Brother 1C picture is not intended to be part of the heat dissipation area of Figure 1A. FIG. 2 is a schematic view showing the heat dissipating unit of the first embodiment disposed in an array in a heat dissipating area. • Figures 3A and 3B show a schematic diagram of the heat dissipation end of a row of heat dissipating units extending to the heat absorbing end of the adjacent column heat dissipating unit. Fig. 4A is a cross-sectional view showing the first conductive member extending outside the insulating layer. - Figure 4B is a cross-sectional view showing the first conductive member having a fin structure. Fig. 5 is a view showing a part of a heat dissipating area of an integrated type wafer having a thermoelectric cooling and dissipating function according to a second embodiment of the present invention. FIG. 6 is a schematic view showing that the heat dissipating unit in the portion of FIG. 5 is turned on. ® Fig. 7 is a schematic view showing the heat dissipating unit of the second embodiment disposed in an array in a heat dissipating area. Figure 8 is a schematic view showing an integrated wafer having a thermoelectric cooling and heat dissipating function according to a third embodiment of the present invention. Figure 9 is a schematic view showing an integrated wafer having a thermoelectric cooling and heat dissipating function according to a fourth embodiment of the present invention. Figure 10 is a schematic view showing the combination of N-type thermoelectric material blocks in series. 1360241

TW4203PA [Description of main component symbols] 100, 300, 400: integrated wafer 110, 310, 410: substrate 112, 312, 412: functional operation area 114, 116, 214, 314, 414: heat dissipation area 120, 420: micro Electronic components 130, 230, 330: heat dissipation unit 130A: heat absorption end 130B: heat release ends 141, 141', 241, 241': first conductive elements 141A', 141A", 241A": extensions 141C, 141C': convex Outer end 142: second conductive element. 150: insulating layer 230R1, 230R2, 230RN: 1, 2, N column heat dissipating unit 260: switching element * 271: first electric drive line 272: second electric drive line 2411: An electric conductor 2412: a second electric conductor P: a P-type thermoelectric material block N: an N-type thermoelectric material block

Claims (1)

1360241 TW4203PA X. Patent Application Range: 1. An integrated wafer with thermoelectric cooling and heat dissipation function, comprising: a substrate having a functional operation area and at least one heat dissipation area on one surface of the substrate, the heat dissipation area being adjacent to the heat dissipation area In the functional computing area; a plurality of microelectronic components disposed in the functional computing area; and a plurality of heat dissipating units disposed in the heat dissipating region along at least one edge of the functional computing area, each of the heat dissipating units including a phase Connecting a P-type thermoelectric material block and an N-type thermoelectric material block, and the N-type thermoelectric material blocks of each of the heat dissipating units are connected to the P-type thermoelectric material block of the adjacent heat dissipating unit; When a current is sequentially passed through the heat dissipating units, the heat dissipating units form a plurality of heat absorbing ends on one side of the functional computing area, and a plurality of heat releasing ends are formed on the other side away from the functional computing area, thereby Low the temperature of these microelectronic components. 2. The integrated wafer of claim 1, further comprising: ^ a plurality of first conductive elements, each of which is used to connect the P-type thermoelectric material block and the N-type thermoelectric material area of each of the heat dissipating units And a plurality of second conductive elements, each of which is used to connect the N-type thermoelectric material block of each of the heat dissipating units and the adjacent heat-dissipating P-type thermoelectric material block. 3. The integrated wafer of claim 2, wherein the first conductive elements are located at the heat releasing ends, and the second conductive elements are located at the heat absorbing ends. 4. The integrated wafer of claim 3, wherein the heat dissipating units are disposed in the heat dissipating area in the form of an array, and the heat dissipating ends of the two heat dissipating units are The first conductive element is adjacent to the second conductive elements of the heat absorbing ends of the heat dissipating units of the adjacent columns. 5. The integrated wafer of claim 4, wherein the plurality of first conductive members of the heat releasing ends between the columns and columns each have an extension extending to an adjacent one of the heat absorbing ends . 6. The integrated wafer of claim 5, wherein the first conductive elements are each a τ-shaped structure. The integrated wafer of claim 3, wherein the first conductive members have one side of each of the p-type thermoelectric material blocks and one of the N-type thermoelectric material blocks. Fin structure. 8. The integrated wafer of claim 3, further comprising: an insulating layer covering the p-type thermoelectric material blocks and the N# type thermoelectric material blocks, and making the p The thermoelectric material block is isolated from the plurality of thermoelectric material blocks, and the first conductive elements are exposed outside the insulating layer. 9. The integrated wafer of claim 1, further comprising: a plurality of switching elements, each of which is connected to two adjacent p-type thermoelectric material blocks and N-type thermoelectric material blocks, The switching element is configured to selectively turn on or off the heat dissipation units, thereby adjusting a heat dissipation range of the heat dissipation region. 21 4^0.241 TW4203PA 0. The integrated wafer according to claim 9 of the claim, further comprising a first electric drive line; a second electric drive line; and 2, the switch elements are further connected to the The P-type thermoelectric material region is connected to the 5th-first power-electric drive line, and the N-type thermoelectric material block is connected to the second electric drive line. 11. The integrated wafer of claim 9, wherein the integrated wafer further comprises: a plurality of first conductive elements, each of which is used to connect the p-type thermoelectric material block and the N-type thermoelectric material area of each of the heat dissipating units And a plurality of second conductive elements, each paste connecting the N-type thermoelectric material block of each of the heat dissipating units and the P-type thermoelectric material block of the adjacent heat dissipating unit. 12. The integrated wafer of claim 2, wherein the first conductive elements are located at the heat releasing ends, and the second conductive elements are located at the heat absorbing ends. 13. The integrated wafer of claim 12, wherein the first conductive elements each comprise a first electrical conductor and a second electrical conductor, the first conductive system corresponding to the heat release end The P-type thermoelectric material block, the β-Second conductive system corresponds to the N-type thermoelectric material block at the heat-dissipating end, and the first conductive body and the second conductive system have a gap. 14. The integrated wafer of claim 12, wherein the heat dissipating units are disposed in the heat dissipating region in an array, wherein the switching elements are used to connect any two adjacent columns. The heat sink unit, or two adjacent heat sink units in the same row. 15. The integrated wafer of claim 9, further comprising: at least one sensing unit disposed on the substrate for sensing a temperature of the heat dissipation zone, and a control unit The control unit is configured to selectively actuate the switching elements when the sensing unit detects a temperature change of the heat dissipating area to the at least one sensing unit and the opening and closing elements. 16. The integrated wafer of claim 9, wherein the switching elements are each a semiconductor element. 17. The integrated wafer of claim 1, wherein the functional computing area has at least one curved edge, and the heat dissipating units are disposed in the heat dissipating region along the curved edge. 18. The integrated wafer of claim 1, wherein the microelectronic components comprise at least one semiconductor component. 19. An integrated wafer having a thermoelectric cooling and heat dissipating function, comprising: a substrate having a functional operation area and at least one heat dissipation area on a surface thereof, the heat dissipation area being adjacent to the functional operation area; a microelectronic component disposed in the functional computing area; and a plurality of thermoelectric material blocks disposed in the heat dissipating region along at least one edge of the functional computing region; wherein, when current is supplied to the thermoelectric material blocks The thermoelectric 23 1360241 • » TW4203PA material block forms a plurality of heat absorption ends on one side of the functional operation area, and forms a plurality of heat release ends on the other side away from the functional operation area, thereby reducing the micro The temperature of the electronic components. 20. The integrated wafer of claim 19, wherein the farther thermoelectric material block is a P-type thermoelectric material block. 21. The integrated wafer of claim 19, wherein the thermoelectric material blocks are N-type thermoelectric material blocks. 22. The integrated wafer of claim 19, wherein the thermoelectric material blocks are electrically connected in parallel. 23. The integrated wafer of claim 19, wherein the thermoelectric material blocks are electrically connected in series. twenty four