TWI323479B - Devices having horizontally-disposed nanofabric articles and methods of making the same - Google Patents

Description

11323479: A7 B7 V. INSTRUCTIONS (1) [Reciprocal References in Related Applications] The following application is assigned to the assignee of the present application, the entire disclosure of which is incorporated herein by reference. Priority is appropriately claimed under 35 USC § 119 or § 120: 5 Nanotube Films and Articles, US Patent Application Serial No. 1/128,118, filed on April 23, 2002 ;

Methods of Making Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles, U.S. Patent Application Serial No. 10/341,005, filed on 2003 January 13th;

Electromechanical Memory Array Using Nanotube Ribbons and Method for Making Same, U.S. Patent Application Serial No. 09/915,093, filed on July 25, 2001; Intellectual Property Bureau employee consumption cooperative printing

Electromechanical Three-Trace Junction Devices, US Patent Application Serial No. 10/033,323, filed on December 28, 2001; and 20 Electro-Mechanical Switches and Memory Cells

Using Vertically-Disposed Nanofabric Articles and Methods of Making the Same, using the Chinese National Standard (CNS) A4 specification (210x297) PCT 11323479 A7 . B7 V. INSTRUCTIONS (2) The Provisional Patent Application No. 60/446,786, filed on February 12, 2003. The present invention claims priority under 35 USC 119(e) of U.S. Patent Application Serial No. 60/446,783, filed on May 12, 2003, entitled "Electro-Mechanical Switches and Memory Cells Using Horizontally-Disposed Nanofabric Articles and Methods of Making the Same (Electro-Mechanical Switch and Memory Units and Their Manufacturing Methods Using Horizontally Arranged Nanostructured Objects). TECHNICAL FIELD OF THE INVENTION The present invention relates to a device having a horizontally arranged nanostructured article and a method of manufacturing the same. [Prior Art] Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumers' Cooperatives. A memory device using nanowires 15 such as single-walled carbon nanotubes has been proposed in the past to form a staggered junction as a memory cell. (See WO 01/03208, Nanoscopic Wire-Based Devices, Arrays, and Methods of Their Manufacture: and Thomas Rueckes et al., "Carbon Nanotube-Based Nonvolatile 20 Random Access Memory for Molecular Computing ", July 7, 2000, Science, Vol. 289, pp. 94-97. In the following, these devices are called the wiring of the nanotubes. The paper size applies to the Chinese National Standard (CNS) A4 specification (210x 297 mm). 1323479 Α7 V. Invention description (3) 5 10 15 Ministry of Economics intellectual property The Bureau of Staff Consumer Cooperatives printed 20 Wrong Memory (NTWCM). Under these proposals, the individual single-walled nanotube wirings suspended above the complex wiring define a number of: the memory unit. Write to one or both wires so that they physically attract or repel each other. Each physical separation (ie, 'attract or repel the wiring') corresponds to _ electrical states. The wire is an open junction. The suction wire is a closed state that forms a rectifying junction. When the power is removed from the junction, the wires maintain their physical (and thus electrical) state, thereby forming a second Volatile Memory Units NTWCM proposes to rely on directed growth or chemical self-assembly techniques to grow the individual nanotubes required for memory cells. These technologies are now considered to be difficult to adopt at commercial scale using modern technology. They may include, for example, the length 4 of the nanotubes that may actually grow by dancing with these techniques (4), and it may be difficult to control the geometrical variables of the geometry of the nanotube wiring so grown. Therefore, improved memory is desired. In particular, U.S. Patent Publication No. 2003-0021966 discloses an electromechanical circuit such as a memory cell 7C, wherein the circuit comprises a structure having a conductive trace and a support extending from a surface of a substrate. Suspended by a support that traverses these conductive traces. Each ribbon contains one or more nanotubes. The bands are formed by the structure from the matte side selectively removing material of one or more nanotubes. By way of example and s' as described in U.S. Patent Application Publication No. 2〇〇3 ·

V. INSTRUCTIONS (4) As disclosed in 002,1966, a nanostructure may be patterned into ribbons, and these ribbons may be used as a component to construct a non-volatile electromechanical memory unit. This ribbon is electromechanically offset to accommodate the electrical stimulation source of the circuit and/or ribbon. The physical 5 state of the offset of the ribbon can be made to represent a corresponding information state. Offset, the state is non-volatile, meaning that the ribbon retains its physical (and thus information) state even if the power supplied to the memory is removed, as in U.S. Patent Application Publication No. 2003-0124325. Explain that the two-wire configuration may be used by an electromechanical memory unit in which two of the 10 lines are electrodes to control the offset of the ribbon. SUMMARY OF THE INVENTION The present invention provides a new device having a horizontally arranged nanostructured article and a method of manufacturing the same. 15 20 In some aspects of the invention, a separate electromechanical device 13 has a configuration of electrically conductive lines. A patch of a nanotube structure is arranged in a switch with the line. The nanotube can define a patch between the first and second states. In the state, the nanotube object is in relation to the line: an open relationship 'in the second state, the nanotube object and the second: the junction-low resistance signal path system and the nanostructure The boundary patch is electrically connected. The configuration includes a defined gap in which the defined gap has a boundary in which the conductive line is arranged under another aspect of the invention.

The paper ruler describes the (5) visibility and the defined patch of the nanotube structure spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. In another aspect of the invention, the apparatus includes another electrically conductive circuit in spaced relationship with the patch of the nanotube structure. 5 10 In another aspect of the invention, a - damp is arranged at each end of the two ends of the nanotube structure and substantially aligned with the defined gap of the nanotube structure At least a portion of the edges. In another aspect of the invention, the slab is comprised of a material. In another aspect of the invention, the splint is comprised of an electrically insulating material having a via that is filled with a conductive material to provide - with the nanotube Road control for electrical connection of structural sections. According to another aspect of the invention, the nanotube structure is composed of a nanostructure having a porous portion, and the conductive material filling the through hole also fills the nanometer. The capillary section of the tube structure. In another aspect of the invention, the nanotube structure segment has a shape defined by a lithographic pattern. In another aspect of the invention, the contact between the nanotube patch and the line is in a non-volatile state. In another aspect of the invention, The nanotube patch and the paper scale apply to the Chinese national standard (CNS}A4 specification (21〇X 297 mm) 1323479

The contact between the lines is in a volatile state. In another aspect of the invention, the at least one electrically conductive track has an interface material to modify the attractive force between the nanotube structure segment and the electrically conductive trace. 5 [Embodiment] Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printing The preferred embodiment of the present invention provides a new article having horizontally aligned nanotube articles and provides a method of manufacturing the same. Certain embodiments provide an improved method of clamping or clamping suspended nanotube articles to improve their performance and manufacturing capabilities. Other embodiments provide a separate or embedded electromechanical s-resonance unit. In some embodiments, the split memory cell unit uses a new method to connect to other circuits or cells that reduces the resistivity of the line to the memory cell. Still other embodiments provide a memory unit having a volatile information state (i.e., information loss will be lost when power is interrupted). Some other embodiments use a three-wire configuration similar to that of U.S. Patent Application Publication No. 2003-0124325. However, these embodiments may utilize a combination of volatile and non-volatile features; for example, the information state may be non-volatile, but the device may use a two-wire configuration where the offset of the nanotube article may be Caused by the line of volatile state characteristics. 20 These preferred embodiments are accomplished by the use of nanotube films, layers or nonwovens which enable them to be formed or possibly fabricated to form various useful patterned components, elements or articles (hereinafter "film","", or "Non-woven" "Structure•••••Nemi Structure•,). From the nano-scale paper scale to the Chinese National Standard (CNS) A4 specification (210x297 mm) 1^23479 A7 5 10 15 20 , invention description (7) The constructed component maintains the desired physical properties of the nanotube and/or nanostructures. These components are formed by nanotubes and/or nanostructures. Embodiments allow for modern manufacturing techniques to be employed (e.g., those used in semiconductor fabrication) to utilize nanostructured articles and devices. Preferred embodiments of the present invention include articles and methods that increase the strain of the nanostructures. A construction of a volatile and non-volatile electromechanical switch comprising a tri-state or three-wire switch having both volatile and non-volatile states. The nanostructures of some embodiments are also provided. A separate honeycomb article, such as a memory cell. In summary, Figure 2 AD shows a separate device having a nanotube article suspended relative to two control electrodes. During manufacture, between the electrode and the nanotube article The gap distance may be controlled to cause different action scenarios for the edge devices. These embodiments are discussed in more detail below. Figure 3-6 shows various plan and cross-sectional views of a device for use with a given unit or device The intersection and spacing relationship between the control electrode and the nanotube article. Preferably, the nanotube patch or section is clamped (up and down) to the portion of the nanostructured article so suspended. In addition, the nanostructured article is preferably connected or bonded to the high conductive gas signal path. 13 ~ Figure 1A-P shows the individual separation of the nanostructured object -9- This paper scale applies to the Chinese g standard (CNS) A4 Specification (2) G XU? Publicity) 1323479 V. Description of the Invention How a device or a single s can be made in accordance with a preferred embodiment of the present invention (these figures are not drawn to scale). The element contains a patch or section of the nanostructure between two other turns that are arranged in an intersecting relationship with the patch or section. 5 Referring to Figure 1 , an insulating or oxide layer is provided. 2 wafer substrate 100. (Alternatively, the substrate may be made of any material suitable for use with lithographic printing and electronic devices, and the oxide layer may be any suitable insulating material) t> oxide layer 1〇2 There is an upper surface 104. The thickness of the oxide layer 102 is preferably a few nanometers but may be thick. The oxide layer 1 2 is patterned and left to create a plurality of holes i 〇 6 forming the support structure 108. The width W of 106 depends on the type of lithographic patterning used. For example, in the current lithography office, this hole may be approximately 180 nm wide. For other methods, the width 15 can be as narrow or smaller as about 20 nm. The remaining oxide layer material exits the support on either side of the cavity 106. Referring to Figure 1B', material is deposited in these cavities 1 and 6 and printed by the Ministry of Economic Affairs Intellectual Property Office Staff Cooperatives to form the lower electrode 112, which may be selected from any suitable conductor or semiconductor. The lower electrode 12 is planarized such that its upper surface is substantially as high as the surface ι 4 above the oxide layer 1 , 2, thereby forming the intermediate structure 114. The lower electrode i 12 may be a prefabricated contact plug or via. Further, the lower electrode 112 may be deposited or fabricated by other methods, including by being formed on the surface of the substrate 1〇2. -10- This paper scale applies to China National Standard (CNS) A4 specification (210 x 297 mm 1323479 A7 B7)

Referring to Figure 1C, a nitride layer 6 (or any suitable insulating material) is deposited on the surface of the structure 114 to form the inter-structure 118. The nitride layer 116 has an upper surface 120. In the 〇 18 micron basic principle (GR), a non-limiting example of a nitride layer thickness is about 2 〇 nm. The thickness of the nitride layer can vary depending on the basic principles of the desired end product. As explained below, these dimensions can affect certain features of the device; for example, in the case of a split memory unit, these parameters can determine whether the switch is non-volatile or volatile and can affect Nanostructure object offset and vQff electricity; t. 10 15 Ministry of Economic Affairs Intellectual Property Officer Η Consumer Cooperative Print 20 Referring to Figure 1D, the nitride layer 116 of the structure 118 is then patterned and engraved to produce a plurality of holes 122. The size and shape of the aperture 122 is made to correspond to the size and shape that will eventually become the active area of the nanotube (i.e., the area where the nanostructure is likely to be offset). The aperture 122 is formed substantially above the lower electrode ip and leaves the remaining nitride layer 124 and forms an intermediate formation 126. Referring to FIG. 1E, a polycrystalline sacrificial layer 128 (having an upper surface 131) is deposited on the surface of the intermediate structure 126 to form an intermediate structure 130. The non-limiting parameter of the thickness τ of the polycrystalline layer 128 is about 100 to 200 nm. Referring to Fig. 1F', the upper surface 13 of the intermediate structure 130 is flattened. The surface 133 of the remaining polycrystalline layer 132 is substantially as high as the upper surface 120 of the remaining IL layer 124, thereby forming the intermediate structure 134. -11- This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 11323479 A7 B7 V. Inventive Note 10 15 20 Referring to Figure 1G, the nanotube structure 136 is applied to the intermediate structure 134 The surface is formed thereon or formed from 1 to form an intermediate formation 138. A non-limiting method of applying this structure U6 is by spin coating a preformed nanotube, aerosol application, immersion or chemical vapor deposition. This method is illustrated in the references listed above and incorporated herein by reference. Referring to FIG. 1H, a photoresist layer 140 is applied to the upper surface of the intermediate structure 138 to form an intermediate structure 142. Next, the area of the photoresist layer 140 is patterned. The area should be above the area of the active area of the nanotube, and should be larger than that area. As shown in FIG. 光, the photoresist layer 14 may be patterned by lithographic patterning of the photoresist layer 14〇. In order to become an intermediate structure 144. The configuration 144 has an exposed portion 146 of the nanostructure on either side of the patterned light 148. Then, as shown in FIG. ,, the exposed nanotube structure 146^ can be etched away, thereby forming an intermediate structure 15〇. The non-limiting method of etching the nanotube structure is by plasma ashing. Constructing a patterned photoresist 148 and a nano-portion 141 that is also patterned below it, see Figure ι, removing the patterned photoresist layer 148 to form a pattern with a nanotube junction # Section or complement 4 154 is constructed as 152. The patch 154 is attached over the region 132 of the sacrificial material and the region U2 is over the electrode material 112. The patch is slightly longer than the multi-album i. The first shape resistance can be ordered. • 12- 5. Inventive Note (η) The width of the body region 132. Referring to Figure 1L, a polycrystalline layer 156 is deposited on the upper surface of the intermediate structure 152 to form an intermediate formation 158. The non-limiting range of the thickness 多 of the polycrystalline layer 156 is between about 2 〇 and 50 nm. 5 Referring to Figure 1M, polycrystalline layer 150 is patterned to form intermediate structure 162. The configuration 162 has a remaining polycrystalline layer portion 16A above the patch of the nanotube structure 154 which, as described above, is located in a portion that will be the active region of the nanotube. The polycrystalline layer portion 16 is more than a portion of the nanotube active region 122 and has the same dimensions or greater than the nanotube structure 154 of the lower layer patterned nanotube structure 154. Referring more to Fig. 1N, upper electrode material 164 is deposited on the upper surface of intermediate structure 162 to form intermediate structure 166. The unrestricted thickness τ of the electrode material 164 is approximately 35 〇 nm. For use as b: the material of electrode 164 can be selected from any metal or conductor suitable for the electronic component. Alternatively, depending on the intended use of the device to be manufactured, for example, if it is used as a protective layer for a nanotube, such a material may be an insulating material. The upper electrode can also be defined as a row or a socket of a standing pad or other suitable interconnect structure.

-13- Specifications (210 X 297 public) This paper scale applies to Chinese national standard 丨 1323479 A7 B7 V. Invention description (12) 15 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 20 See, Figure 10 does not show the upper package material. Referring to FIG. 1P, the remaining polycrystalline layer portion 16A and the remaining polycrystal 132 are etched away to establish configuration 176. Electrodes 168 and U2 extend perpendicularly relative to the page and are supported at the end of the nanotube active region away from the patch 132 in which the nanostructure is suspended. Supplement #154 is suspended because of the gap (e.g., 174) defined by the thickness of the sacrificial material being removed (e.g., _). For the sake of clarity, Figure 1P does not show the upper packaging material. However, Figures 2a-d show how the upper material 178 can be used to encapsulate this configuration and to assist in clamping the suspended nanotube structure article. The above process can be changed by using the multiple S method. For example, the steps corresponding to Figure U.L can be replaced as follows. Referring to Figure h, (which will follow the step corresponding to Figure 1H), the photoresist layer 14A (see Figure ih) is patterned to leave light 16149 1 with exposed nanotube portions 147 'to form the middle Construct U5. Referring to FIG. U, a polycrystalline layer 151 is deposited on the exposed Neil tube region U7 (see FIG. 1A) and deposited on the remaining photoresist layer ,9, thereby forming an intermediate structure polycrystalline layer 151. Any material useful in the CM〇S process, as long as it is different from the exposed nanotubes just above the exposed nanotubes (4). Then, referring to FIG. 1K, the remaining photoresist layer 149 is removed during the peeling W) process to form an exposed nanotube.

This paper scale applies to China National Standard (CNS) A4 specifications.

1323479 5 Description of invention (13) 5 10 15 20 Construction 155 of structural portion 157. This process then continues with the process described above with reference to Figure 1M. The exposed nanotube structure portion 157 may be removed during the ashing process, leaving the polycrystalline layer 丨5丨 on the nanotube structure segment i 54 to form the structure 162. The remaining polycrystalline portion 151 is larger than the portion that will be the active area of the nanotube, similar to the above, and a similar later step can be performed to complete the configuration. 2A-C show metallization and packaging mechanisms that can be used with the construction 176 of FIG. 1P. In particular, construction 176 has been wrapped by insulating material 178. Depending on the technique employed, the area in which the nanostructured object is suspended may be a vacuum. The structure thus formed is a three- or three-wire device. For example, some of the patent applications identified and incorporated above may describe various methods of using a three- or three-wire device. Between other methods, a three-wire device can be used as a redundant method of initiating a suspended nanotube article; it may be used to encode a third message; it may be used to be in a push-pull arrangement with a suspended object. In addition, it may be used to enable one line to deflect the nanotube object into contact with the electrode, while another line may be used to release the nanotube article from the contact. The nanoswitch in construction 182 has been wrapped by insulating material 178 and has a gap height of 18 〇. In some embodiments, the height 180 is the thickness of the sacrificial polycrystalline layer 132, 16 (see Figure 1 (0) above). At the time of the offset 'nano junction ^ contact -15- this paper country national standard (CNS) A4 specification (21 〇 97 9713 13479 A7 _____ B7 5, invention description (14) electrode 112' by which A stable van der Waals interaction of the non-volatile switch is produced. Structure 183 shows a nanostructured switch having an insulating layer 185 positioned over an electrode. (This oxidized electrode is manufactured in accordance with Example 3 below) The insulating layer 185 may be used to change the characteristics of the volatile switch to be used or to provide a further guarantee of the desired action. The insulating layer (which may or may have been placed on the facing surface of the electrode 168) may be used. To prevent the different fibers from the nanostructured components from simultaneously electrically contacting the two electrodes during the state transition (丨丨2, 10 168). Such contact can avoid or hinder the structural transition between states. The consumer cooperative printing will compare the constructions 82 and 183 that are used as non-volatile switches with the configuration 18 8 that displays the volatile switches. In configuration 18 8 , the nanostructures 172 and under have been added. The gap 15 between the electrodes 1丨2 is at a height 186 such that the strain of the extended nanostructure overcomes the Van der Waals attraction between the structure and the electrode. The nanostructure forms part of the closed circuit and returns to its non- The state of the open circuit of the offset. We should / idea that the effect of the Van der Waals interaction between the nanostructure and other components at their interface can be affected. This effect can be increased by 2〇 or reduced; for example, attractive This can be reduced by coating the surface of the electrode with a thin layer of deuterated layer or other suitable material. This purpose of reducing attraction may be used to construct a volatile nanoswitch; such a volatile switch may be, for example, a relay , sensors, transistors, etc. - 16 - B7 5. The invention (15) is particularly useful. In the embodiment of circle 2A, the one or the electrodes may be relative to the patch 154 Start, use the leveling force to make the patch 154 offset and contact the lower electrode 112. Under this 愔.π%% under this condition, the court will form a stable 10 15 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 20 Deval Interaction. The offset of the patch also establishes a restoring force to restore the patch to the horizontal (non-offset) state shown in Figure 2A. This restoring force is especially the geometry of the device (eg, patch 154 partial In the present embodiment, the Van der Waals force that maintains the patch 154 in contact with the electrode 112 is greater than the restoring force generated by the geometry of FIG. 21, thereby producing a non-volatile switch. That is, when the power is removed, the Van der Waals force that causes the patch 154 to contact the electrode 112 is greater than the restoring force on the patch 154, so that the patch will remain in an offset state. This is the configuration of Figure 2C. 188 for comparison. In Figure 2C, the 'gap distance 186 is larger, thereby creating a greater restoring force. By properly controlling the gap distance (via the creation of the sacrificial material), such a gap may be made large enough to establish a restoring force greater than the Van der Waals force. Thus the device of Figure 2C will be volatile. If the power is interrupted, the patch 154 can be offset similar to that described above, but the resultant force will be large enough to return the patch 154 to a horizontal state. The nano-ribbon can be deflected by electrostatic attraction, but Van Valli itself is not enough to keep it there. In the configuration 188, the gap height 186 between the patch 154 and the lower electrode 112 has been increased so that the extended nano-17-sheet size is applicable to the Chinese National Standard (CNS) A4 specification (210χ297 mm). Description of the invention (16) '·. The strain month b overcomes the van der Waals attraction between the structure and the electrode. The nanostructure forms part of the closed circuit and returns to the off-state of the offset. Figure 2D shows no construction 192. The configuration 192 shows a non-volatile opening. The nanostructure 154 with respect to this offset contacts the electrode U2 under the closed__ circuit and continues to maintain the circuit in an indefinite manner in a contact manner. If the gap height 18 of the configuration 192 is sufficiently large as in the construction 188, the offset state of the nanostructure 172 will not be maintained indefinitely. The shape variable of the nanostructure 154 can be affected by appropriately supporting the nanostructure 154. For example, as shown in FIG. 2(A), the nanostructure 154 may be "at the edge of the remaining open region 194 after being removed from the sacrificial polycrystalline layer previously shown in FIG. 1 ("). The clamping of the upper and lower portions of the support portion around the nanostructures 154 can increase the strain on the nanostructures 154. In some embodiments, this type of clamping portion is located at the edge of the open region 194. Establishing a non-volatile volatile switch that would otherwise be non-volatile. By controlling the design and manufacture of the nanoswitch assembly as described herein, it is possible to optionally provide a tri-state non-volatile construction and/or volatility. Construction - The use of separate nanostructures and electrodes in this manner allows for the formation of separate devices and units. For example, these units may be used in digital memory devices - nanostructures (eg 154) and electrodes ( For example, 168) can be extended on the substrate and / or support portion 102, enough to be 18 - the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 5. Invention Description (17) Allow electrical connection To nanostructure 154 Electrode 168 is completed. This connection may be accomplished by any suitable method, such as by engraving or exposing to form a connection nanostructure 154 with a start electrical signal channel 196 (not scaled) or through Hole 5 Channel 196 is used to connect the switch-component (such as the nano-structure to the - start (read / write) line. Channel 196 connection = with - conductor fill to achieve the start connection, or maybe Formed by certain potting techniques. 〃 The present invention is directed to the formation of conductive composite joints, whereby the appropriate matrix material is arranged in the fiber of the nanotube or nanostructure, Within and around other porous nanomaterials. Such junctions provide the desired mechanical and/or electrical properties. For example, electrical contact between the nanostructures and the metal connection or activation point can be improved, Alternatively, the contact resistance can be reduced by applying metal contact as the substrate material 15 for impregnating the nanostructure tube. Also, mechanical contact and strain can be increased as a result of increased contact between the nanotube and the matrix material. For the sake of reference 2D, the activation connection channel 196 extends down to the nanostructure 154. The metal filling the channel 196 can then be introduced further into the capillary 20 holes of the nanostructure 154 in the region 194. The matrix material extends downwardly. Up to the nitride layer (or any other layer) below the nanostructure 154. The effect of this connection can be used to solidify the unstructure 154 and increase the strain on the nanostructure 154. Again, the nanostructure 154 is added and activated. The electrical connection between the connections. Will be nano-19. Nuclear specifications (21〇χ 297-^~---- >1323479 A7 B7 V. Invention description (18) '. Construct © to the branch department The method is conceivable and one method is illustrated in Example 2 below. Almost any material (insulating or conducting) can be made to infiltrate or pass through (iv) a thin article of porosity such as a nanostructure. This can be performed to 5 & good mechanical closure contact and increase reliability and manufacturing capabilities, or to use & good electrical connection with the nanostructure and reduce the contact resistance of the nano object according to the material used, The joined state can be formed between the material that penetrates the shell material and the material below the nanostructure. Examples of materials which can be used in this manner include metal and telecrystalline crystals and may have other uses, such as for the manufacture of permeable, residual crystals. It is worth noting that the combination of the above junctions did not result in cracking of the structure of the nanostructured material in which the conductor was impregnated with the base material. That is, the connecting passage 196 itself does not pass through the 35 nm structure 154' but instead allows only the packing base f material to flow into and out of the nanostructure 154 and connect it to other components of the apparatus. In some cases, conductive fillers may be required to reduce the electrical resistance of the nanostructure or contact with the nanostructure. Figure 3 shows a view directly from the upper intermediate configuration 176 (see Figure I 1P). The oxide layer is supported by the nanostructure 154 and the nitrided J 20 layer 116 supports the electrode 168. The cross sections Α·Α, B_B, and c_c, I are shown for reference. For the sake of clarity, the upper encapsulating material 178 is omitted (see | see Figure 2A). Figure 4 is the cross-sectional A_A shown in Figure 3, the middle of the structure " (__.0-1 paper size applies to China's national specifications (2) 0x297 male dragon) ' -----

The Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed a stereogram of 1323479 kl76. Figures 5 and 6 are perspective views of the intermediate configuration 182 along the cross-section and C-C (for clarity, the construction I% is constructed 182 with the insulating layer removed). (In Figure 46, the upper material 178 is shown). Figure 5 is a diagram of the components of the device of Figure 3, which is seen along the A A's pine profile. (For clarity, the encapsulation material 178 is removed again from this figure). In this portion of the configuration away from the active area of the nanotube, the upper electrode 168 is arranged above the nitride layer 116. 1 〇 Figures 5(A)-(B) show two views of the structure seen along the cross section B-B. In these examples, construction 182 includes encapsulation material 178 and corresponds to the views of Figures 2A-B. Fig. 5A shows a view along the cross section B_ and Fig. 5B shows a view along the cross section b-B and again shows a cross section along C-C. 15 These figures show a patch 154 suspended in the active area between the upper electrode 168 and the lower electrode U2. As noted above, and as illustrated and described in the incorporated patent application, these electrodes may be used to bias the patch 154 up or down. The patch 154 is clamped from above and below the material to the edge of the active area of the nanotube where the patch 154 is suspended and may cause an offset, as shown in Figure 2C. In the present embodiment, the displacement D of Fig. 2C has been substantially removed. The substrate layer 100 supports the chemical layer 102. The lower electrode 112 is arranged below and is not in contact with the nanostructure 154 fixed to the insulating layer 178, and the insulating layer ι 6

-21- 1323479 A7 ΒΊ V. Description of invention (2〇15 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 20 Support Electrode Material 168. For the sake of clarity, patch 154 with electrical contact is not shown, but may for example In conjunction with Figure 2 (the metallization techniques illustrated. As described above, the gap between the patch 154 and the corresponding electrode may be controlled to establish a volatile or non-volatile state. Figure 6 shows along the cross-section c_c, see The resulting component of structure 182. The patch 154 in this cross-section does not appear to be in contact with any other components, but as can be seen in Figures 5A-B, the patch is in contact with other components (e.g., insulating layer 178 (not shown) 6))) and clamped by these components. The exploded view (shown in dashed lines) shows the substrate j 〇〇 'insulating layer 102' and the relationship between the nitride layer U6 and the electrodes 112 and 168 and the patch 158 associated with the aforementioned components. The above-described configurations can be used as nanoelectromechanical switches and can be constructed in accordance with the aspect ratios of lengths a and b to have a volatile or non-volatile state (e.g., offset by patch 154). Notable), where a is the distance between the unmetset nanostructure and the electrode (ie, 'the gap of FIG. 2A_B is 18〇 or 186), and b is the length of the offset nanostructure. The strained lanthanum of the shifted nanostructure is less than the Van der Waals force that maintains the nanostructure in contact with the lower electrode, then the switch will be non-volatile. However, if the strain energy can overcome the van der Waals suction, the switch will Operating in a volatile manner and a circuit will only be briefly closed. Furthermore, the switch may be volatile with respect to the upper electrode 168, -22- This paper scales the National Standard (CNS) A4 specification (2) Love)

I Book 1323479 A7 V. Description of the invention ( 21 10 15 Printed by the Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative 20

The lower electrode 112 may be non-volatile, or both may be volatile or both may be non-volatile. Figure 7 is an actual micrograph of a working nanostructure switch. The manufacture of the switch is illustrated in Example 2 below. This microscopic cymbal makes it possible for the nanotubes with only a few patches to be clear, but can be seen across the formed channels. (This device omits the upper encapsulation material 178 as shown in Figure 2A). Example 1 In order to manufacture a non-volatile nanotube switch, a tantalum wafer having a thermally grown oxide layer (0_5//m) was used. The buried electrode is composed of polymethyl methacrylate (PMMA) as a photoresist and consists of electron beam lithography (EBL). After the electrode pattern is defined in the photoresist, 'reactive ion etching (RIE) uses chf3 gas to construct a trench in the oxide layer. The buried electrode is filled with the electrode by depositing the electrode in an electron beam evaporator, and then the photoresist of N-methylpyrrolidone (N_methyl pyrr〇Hd〇ne) is stripped at 70 ° C ( Shipley 1165) consists of a peeling process. These electrodes are 1818±0.02//m wide' and contain 85 Å of metal (titanium 'Ti) and 200 angstroms of sacrificial material (Oxide, Gossip 2〇3). The vertical gap between the electrodes and the SWNTs that have been deposited so far is adjusted to 2 〇〇 ± 5 埃 Å to produce electromechanical switchable bits' as predicted in theory. This 200±50 angstrom gap corresponds to the tensile strain of the etensile = 0.9±0.5% of the nanotube in the on state, which is exactly at the SWNT -23- This paper scale applies the Chinese National Standard (CNS) A4 specification (210x297). Bulletin 1323479 A7 B7 V. Within the limits of the invention (22). However, helium or metal ion beams are unable to resist this tensile strain without permanent plastic deformation. After creating the buried electrode, a carbon nanotube structure is constructed. The nanotube structure is produced by spin coating a solution of 1,2 dioxobenzene (ortho-5 dichlorobenzene 'ODCB) on a device wafer. The concentration of the nanotube solution was 30 ± 3 mg / L. This solution was sonicated (70 W sonication power) in an ultrasonic bath for 90 minutes for complete dispersion into the nanotubes. After sonication, the nanotube solution is rotated onto the wafer using a typical photoresist rotation technique. The desired sheet resistance that produces a <100 kQ/square SWNT structure requires a majority of rotation. The sheet resistance of the nanotube monolayer can be varied between 10 kQ/square and several ΜΩ/square by adjusting the concentration of the nanotube solution and the number of spin coating steps. For the device discussed here, a 15 SWNT sheet resistor of 75 k Ω / s is selected. Printed by the Ministry of Economic Affairs, the Intellectual Property Office, and the Consumer Cooperative. Once the desired resistance and density of the nanotube structure are obtained, the i-line resist is spin coated on the SWNT (eg Shipley 1805 photoresist). However, the patterning of the nanotubes is not limited by the type of photoresist used, since various types of photoresists have been used. Next, the photoresist coated wafer is exposed and developed to form the desired pattern. After development of the pattern, the exposed carbon nanotubes can be removed by isotropic ashing with oxygen plasma, while the nanotubes under the photoresist are protected from oxidation. Normal 300 W power isometric-24- This paper scale is applicable to China National Standard (CNS) A4 specification (210x297 mm) 1323479 A7 B7 V. Description of invention (23) Oxygen plasma is based on 270 mtorr pressure and 9 points The ashing time is used to remove the exposed SWNT. Then, the photoresist was subsequently stripped with N methylrrolidone (NMP) and the SWNT film pattern was exposed. Although strips having a width as small as 0.25/zm have also been produced, the SWNT strips of Fig. 5 are generally 100/zm long and wide. In the subsequent alignment of the EBL step, the clamp line (Ti, 1000 angstroms thick '0.18 0.02//m wide) is made up of SWNT strips (parallel to the buried electrode (to the electrode 1000 angstroms; on the top of the crucible) The peeling of the PMMA photoresist is defined. When the sacrificial layer is removed in the next step, it is necessary to remove these clamps to avoid uncontrolled adhesion of the SWNT to the lower electrode. Next, the device electrode and the SWNT strip system Connected to the pads, the individual contacts on the die can be electrically tested. The distance between the SWNT strip metallization and the switch junction is 3/m. Finally, the patterned SWNT is borrowed. It is suspended by wet chemical removal of the A1203 sacrificial layer with aqueous alkali (hydrogen oxyhydroxide, NH40H), followed by rinsing with deionized water (DI) and isopropyl alcohol (IPA). Then, the device is sealed in a sealed manner. The Ministry of Economic Affairs, the Intellectual Property Office, the Staff Consumer Cooperative, printed the programmable nanotube memory device manufactured by this program by using the programmable voltage source of the Keithley electrometer to scan the voltage on the trace surface. Stylized. At the same time, the current flowing over the junction is The current and voltage curves (IV curves) were measured using an integrated current preamplifier (10 fA sensitivity) of the electrometer. For all measurements, the SWNT was applied with a high bias and the lower electrode -25 - This paper scale applies to China National Standard (CNS) A4 specification (210x297 mm) 1323479 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 V. Invention description (24) is maintained at ground. When SWNT is suspended from a High resistance (>ΜΩ) When the OFF state is converted into contact with the lower electrode to form an ohmic (~kQ) ON state, the current and voltage (IV) measurements are shown at a threshold voltage of 2.5 ± 0.5 V, and the nanometer The sudden increase in current across the junction of the tube and the electrode increases the nanotube position (ie, the switching level is non-volatile) even when the power is switched off for several days. Example 2 Wafer (32 -04, die E4, device 9x26/4x17) was coated with photoresist and patterned using standard optical lithography, which was performed by reactive ion etching (RIE) in CHF3 for 4 minutes. It was transferred to Si02. Chrome/Gold 5/50nm standard The trace is used for EBL alignment (via thermal evaporation). The metal above the photoresist and photoresist is removed by standard exfoliation using NN dimethyl sulfonium ketone (1165). The 15 wafers were held for 5 minutes. PMMA (Microchem) was applied by spin coating for 60 seconds at 4000 rpm. Electron beam lithography (EBL) was performed to make EBL marks, and PMMA was developed. This pattern was etched in CHF3 for 4 minutes to enter SiO 2 . 5/50 nm chrome/gold was deposited and stripping was performed as indicated above to leave the EBL mark. PMMA is applied and EBL is performed to establish a lower electrode pattern. PMMA is developed using MIBK. The RIE was performed in CHF3 for 4:30 minutes to transfer this pattern to Si02. -26- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm)

<1323479 A7 B7 V. DESCRIPTION OF THE INVENTION (25 85/20 nm titanium (conductor) / gossip 2 〇 3 (sacrificial layer) is the deposited electron beam 'and is peeled off as described above to establish a lower electrode. Microsurgery (AFM) determines the underfill/overflow of the lower electrodes, which are not filled with -2 nm). 5 Laser ablation in the solution The nanotube system is rotated 8 times over the wafer to produce a film with a resistance of 50 kilo ohms (5 〇 0 ι·ρπι for 30 seconds, and 2000 Rpm lasts 2 sec seconds, 8 times). The photoresist is rotated above the nanotube structure (10 4000 rPm in 1 minute). The photoresist system was patterned and developed, and the ITO 2 electro-accumulated wafer was printed three times at 3 〇〇w for 3 minutes with an interval of 5 minutes to remove the exposed naphthalene. Rice tube. Use 1165 (Shipley) to remove the remaining photoresist. PMMA was applied as indicated above, and EB lithography was performed to create a pattern of splints that adhered the nanotube structure more firmly to the underlying support (15 nm of 1 〇〇 nm). Interconnects (not shown in the photomicrograph) are created by first coating and developing photoresist as shown above, and the upper interconnect metal material (10/10/250/10 chrome/gold/copper/ Gold) deposits and performs a stripping procedure. The sacrificial Ah3 layer was removed by wet etching with 4:1 deionized water: 351 (Ship丨ey) (a NaOH developer). The junction shown in Fig. 7 is established by the method outlined in Example 2. The bright vertical strip is a raised support; the single dark strip is the electrode below the suspended nanotube. Because of the resolution of the electron microscope, this image does not clearly show the nanotubes, but the geometry of the display switch is -27- 1323479 A7 B7 10 15 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 20 V. Invention description (26) Shape Example 3 As illustrated in Example 2, the junction is established to be oxidized to increase the true volatility of the switch, as follows: 母2 Five standard cubic centimeters (SCCm) 〇 2 is in NRAM The switch flows above and the AC voltage (triangular wave) is applied to the NRAM junction (5 V amplitude, 1 〇 kHz frequency). Amplitude below 2 V is not sufficient to make the switch volatile. An amplitude above 7 V often destroys the device (later very high to infinite resistance). I have found that in the presence of 〇2, the switch turns to volatile within a few seconds of applying a voltage' and then maintains the switch volatile. The 5V amplitude alternating wave suitably oxidizes the electrode; however, a voltage amplitude of 2v_7V has been successfully used to fabricate volatile devices. Figures 8A-9 illustrate various methods by which a nanotube structure may be clamped or clamped or bundled by various materials comprising a metal cover. This can be broken to better secure the nanotube patch and provide low resistance to interconnect to the patch. Fig. 8(A) shows the structural part of the nanostructure and the method of its creation. Such a framework nanostructure can be established by first establishing a structure 8〇2 on the substrate (as shown in the intermediate configuration _); covering the structure with a suitable covering material 812 (eg, inter-structure 8H) And; for example, by lithographic patterning and removal of a portion of the disc material 812, thereby leaving a -28-paper scale 剌中® National Standard (CNS) A4 specification (210) around the exposed structure X 297 mm) 11323479 A7 B7 V. INSTRUCTIONS (27) The "framework" of the material (as shown in intermediate construction 814). This method of bundling is more fully described in the "Non-volatile Electromechanical Field Effect Transistors and Methods of Forming Same" application. June 9, 2003, Serial No. 60/476,976. The cover material may be electrically conductive and may be used to alter the electrical characteristics of the entire patterned structure, or it may be semi-conductive or insulative. When used alone to open the exposed structure The material of the tying layer should be selectively etchable throughout the nanostructure. The material of the cap layer 10 may be selectively etched throughout the intermediate layer between the nanostructure and the cap layer. In this case, When etching and patterning the cover layer, the intermediate layer can serve as an etch stop layer. Figure 8(B) shows the patterned structure, where no frame is formed, instead a separate segment of the cover layer is formed, and the separation section may It is an electrode 15 and has a particularly useful application for resistance modulation detection construction. The intermediate structure 810 is patterned to form an electrode 818, such as with an intermediate structure 816 The intermediate structure 900 of Figure 9 of the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs shows yet another method of forming a nanostructured device. The method has a cover material 902 that is selectively etchable throughout the middle 20 layers 904. The material 902 is preferably a metal, and the intermediate layer is preferably a semiconductor such as germanium, however any material suitable for this application will function. The intermediate layer 904 is arranged between the nanostructure 906 and the cover layer 902. In this case When applying the cover layer -29- This paper size applies the Chinese National Standard (CNS) A4 specification (210x297 mm) 1323479 A7 B7 Five invention instructions (28 902 for dry etching and patterning, the intermediate layer 9〇4 can be used as etching Stop layer. The intermediate structure 910 shows the patterned cover layer 912' in the shape of a frame. However, depending on the requirements of the final product, any pattern will work. The intermediate structure 91 is subjected to an annealing step (forming a 5 configuration 916). The cover layer 902 and the intermediate layer form a conductive composite layer 914 such as a metal telluride. According to the use of the final product, the composite layer can be used as a stitching electrode. Other contact or addressing elements. Figure 1 〇 is an image of an exemplary structure of a nanotube shown in perspective. As can be seen, 'this structure may be highly porous, and 10 are ready to have several threads with a gap in the middle. In this figure, there are actually a number of ribbons that extend from left to right and are separated from each other by a region without a nanotube. We may have noticed that the structure of Figure 7 is also very porous and has There are a few nanotubes that cross the channel and the contact electrode. In the two figures, the resolution of the image is 15 times affected by the imaging technique, so some nanotubes cannot be visualized in an in-focus or noticeable manner. Other changes Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Cooperatives, it is noted that the electrodes of the upper electrode 168 itself may be composed of nanostructured materials. In some embodiments, the nanostructure 20 ribbon or another nanostructure member is arranged over the movable nanostructure element 172 in place of the metal electrode, allowing the sacrificial material to be removed from beneath the upper electrode. Fluid can flow through the nanostructured material disposed over the sacrificial layer to remove the sacrificial material. Similarly, if desired, -30- this paper size applies to Chinese national standards (CNS> A4 size (210 X 297 mm) 1323479

The lower electrode can be composed of a nanostructure material. Under certain preferred embodiments as shown in ® 2(A)-(B), the tube patch 154 has a width of about 18 〇 nm and is bundled, hung or fixed to the preferred one. It is a branch building 102 made by Nitrix. An n-doped germanium electrode is formed in a partial region of the lower electrode 112 below the patch 154, the sub-system being located near the support 11?, and preferably not wider than the patch (e.g., 180 nm). The relative spacing (Fig. 2(B)) from the upper end of the support 102 to the offset position of the patch 154 attached to the electrode 112 should be about 5-50 nm. The size of the interval (18〇 or 186) is designed to be 1〇. The electromechanical switching capability of the memory device is compatible. For the present embodiment, an interval of 5-50 nm is preferred for some embodiments utilizing patch B4 made of carbon nanotubes, although other spacing may be preferred for other materials. This size is due to the interaction between the strain energy and the adhesive energy of the offset tube. These feature sizes are presented in view of modern manufacturing techniques. Other embodiments may make smaller (or larger) sizes to reflect the capabilities of the manufacturing equipment. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Goods Elimination Cooperative. The nanotube patch 154 of some embodiments is formed by a non-woven structure of entangled or matte nanotubes (more below). The switching parameters of the ribbon are similar to those of the individual nanotubes. Therefore, the pre-cutting of the ribbon should be repeated 20 times and the voltage should be close to the same number and voltage of the nanotube. Conventional embodiments of the present invention do not utilize fabrication techniques including thin film and photolithography, unlike conventional techniques for growing or chemically self-assembling according to the orientation of individual nanotubes. This manufacturing method itself results in a large surface, -31- This paper scale applies to the National Standard (CNS) A4 specification (210x297 mm) Ί323479 A7

丨 1323479 V. INSTRUCTIONS (31) The application of states, transistors, etc. may be particularly useful. When the vertical spacing between the patch and the underlying electrode is increased, the switch becomes volatile when the offset nanostructure has a strain energy greater than the Water force of the sustaining structure and the underlying electrode. The thickness of the insulating layer that controls this spacing can be adjusted to produce a non-volatile or volatile condition of a given vertical gap in accordance with the requirements of a particular application having the desired electrical characteristics. 10 15 20 Other embodiments involve controlled components of the carbon nanotube structure. Specific. The method of controlling the relative amount of metal and semiconductor nanotubes in the nanostructure is employed. In this manner, the nanostructure can be made to have a higher or lower percentage of metal nanotubes relative to the semiconductor nanotubes. Accordingly, other characteristics of the nanostructure (e.g., resistance) will change. Control can be achieved by direct growth, removal of undesirable materials, or the use of refined nanotubes. A number of methods have been described, for example, in the above-referenced references for growing and fabricating nanostructured articles and materials. U.S. Patent Application Serial No They also illustrate various methods of making such nanostructures and devices. For the sake of cleanliness, the various aspects disclosed in these references are incorporated... This is not repeated. For example, various shielding and patterning techniques for selectively removing portions of a structure are described in these applications; in addition, 'making the nanostructure grow or forming a nano-33-sheet with pre-formed nanotubes The scale applies to the China National Standard (CNS) A4 specification (210x297 mm) 1323479 A7 B7 V. Description of the invention (32) The various methods of the meter structure are described in these applications. As illustrated in the incorporated references, the nanostructures can be formed or grown throughout the defined regions of the sacrificial material as well as throughout the defined support regions. The sacrificial material may then be removed to create a suspended object of the nanostructure. See, for example, Electromechanical Memory Array Using Nanotube Ribbons and Method for Making Same, U.S. Patent Application Serial No. 09/915,093, filed on July 25, 2001, The structure of the ribbon suspension of the nanostructure. 10 The article formed by the preferred embodiment facilitates the creation of nanoelectronic devices and can also be used by hybrid methods (eg, using nanostrip memory cells associated with semiconductor addressing and processing circuitry) ) to help increase the efficiency and performance of current electronic devices. It will be further understood that the scope of the present invention is not limited to the above-described embodiments, but is defined by the scope of the following claims, and the scope of the claims will include modifications and improvements. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Cooperatives. This paper scale applies the Chinese National Standard (CNS) A4 specification (210x297 mm)!丄:^

BRIEF DESCRIPTION OF THE DRAWINGS In the drawings, Figures 1A-P are 'shown in the middle of the process of forming a device having horizontally aligned nanotube articles in accordance with certain embodiments of the present invention. 2A-D are diagrams showing certain embodiments of the present invention (wherein a suspension: the gap displacement between the nanotube object and the electrode can be controlled during the manufacturing period) A cross-sectional view showing a metallization mechanism in accordance with certain embodiments of the present invention; 1 3 3 shows a plan view of an intermediate structure in accordance with certain embodiments of the present invention; and FIGS. 4-6 are diagrams in accordance with the present invention. The embodiment shows a perspective view of one of the intermediate configurations of the grain; FIG. 7 is a photomicrograph of the intermediate structure 15 in accordance with some embodiments of the present invention; FIGS. 8A-B and 9 show the present invention in accordance with the present invention. A method comprising a relatively low material printed by the Ministry of Economic Affairs, the Intellectual Property Bureau, a consumer cooperative, printed with a material of a resistive material to bundle or clamp an object made of a layer of a matte nanotube; and FIG. 10 is a exemplified nanometer in perspective Image of the structure. -35- This paper size applies to China® Standard (CNS) A4 (210x297 mm) 1 丄323479

V. Description of Invention (34) Printed by the Ministry of Economic Affairs, Smart Finance Bureau, Staff Cooperatives [Description of the code] 100~矽 wafer substrate/substrate layer 102~support/oxidation layer/substrate/insulation layer 104~upper surface 106~hole 5 108~support structure 110~support 112~lower electrode 114~_interstructure 116~nitride layer/insulation layer 118~intermediate structure 120~upper surface 122~hole/nanotube active region 10 124~nitriding Layer 126 to intermediate structure 128 to polycrystalline layer/sacrificial layer 130 to intermediate structure 131 to upper surface 132 to polycrystalline layer 133 to surface 134 to intermediate structure 136 to nano tube structure 138 to intermediate structure 15 140 to photoresist layer M1 ~Nano structure portion 142~Intermediate structure 144~Intermediate structure 145~Intermediate structure 146~Nano tube structure/exposed portion 147~Nano tube region/Nano tube portion 20 148~Photoresist layer 149~Photoresist layer 150~ Intermediate structure 151~polycrystalline portion 152~intermediate structure 153~intermediate structure 154~nano structure/nanotube structure/nanotube structure segment/nano-36- This paper scale applies to Chinese national standards (CNS) A4 specification (210 X 29*7 mm) 11323479 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (35) patch 155 ~ structure 156 ~ polycrystalline layer 157 ~ nano tube structure Portion 158 to intermediate structure/patch 160 to polycrystalline layer portion 162 to intermediate structure 5 164 to upper electrode 166 to intermediate structure 168 to upper electrode 176 to intermediate structure 178 to packaging material/insulating material 172 to nanostructure 180 to gap Height 182 ~ intermediate structure 10 18 3 ~ structure 185 ~ insulating layer 186 ~ gap height / gap distance 188 ~ structure 192 ~ structure 194 ~ open area 196 ~ connection channel 800 ~ intermediate structure 802 ~ structure 810 ~ intermediate structure 15 812 ~ cover Material 814 to intermediate structure 816 to intermediate structure 818 to electrode 900 to intermediate structure 902 to cover layer 904 to intermediate layer 906 to nanostructure 910 to intermediate structure 912 to patterned cover layer 20 914 to conductive composite layer 916 to structure -37 - This paper scale applies to China S Standard (CNS) A4 specification (210x297 mm)

Claims (1)

%年丨2^9 revised this last month ^, the scope of patent application Patent Application No. 93103122 T ^ *i^?C ^.atent ΑρΡ,η· Ν°· 93103122 广τχ τ说界利gm辞j&可—q平f = t Amended Claims in Chinese - F.ncl. Mi^ (Citizen-February 24, 1998) (Submitted on December 24, 2009) ι· A Separate Electromechanical Device Containing. 5 10 Structure Containing a Conductive Line; Definition of a Nanotube Structure 福 y fa The M. , patch is arranged in a spaced relationship with the line, the nanotube structure comprises a film of a nanotube; and wherein the defined structure of the nanotube structure is in the first disk An electromechanical offset between the second states, wherein in the first state: the hemispherical structure is spaced apart from the line, and wherein in the second state, the nanotube structure is The line contact; and a low resistance signal path in electrical communication with the defined patch of the nanotube structure. Order % Ji Zou Intellectual Property Bureau member Η Consumer Cooperative Printed 20 2. Separate electromechanical device as described in the scope of patent application No. 6 where the low-resistance signal path is 6 and the definition of the nanotube structure The metal signal path of the piece contact. 3. The split electromechanical device of claim 2, wherein the configuration comprises a defined gap in which the conductive trace is arranged, wherein the defined gap has a defined width, and wherein the nanotube structure is defined The patch spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. 4. A separate electromechanical device comprising: a structure comprising first and second electrically conductive lines arranged substantially parallel to each other and spaced apart from each other; -38 the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210x297 public): \ Jitoray ( JW) \ pc-〇93\93〇45\93<M5-C /,,,,,,,,,,,,,,,,,,,,,,,,,, And the extension; =, and substantially perpendicular to the boundary between the first and second lines and the meter tube structure ^ patch system can be electromechanically offset second: 35 at least the second line of the 'contact' with Electrical stimulation of at least one of the second lines relative to the patch of the nanotube structure, the nanotube structure comprising a film of a nanotube; and a low resistance signal path associated with the nanotube structure The boundary patch is electrically connected. 10 15 Ministry of Economic Affairs Intellectual Property Office Employees' Consumption Cooperatives Printing 20 5 · As claimed in claim 4, the separate electromechanical device of item 4, wherein the low resistance signal path is a defined patch of the nanotube structure The metal signal path of the contact. 6. The split electromechanical device of claim 4, wherein the configuration comprises a defined gap in which one of the conductive traces is arranged, wherein the defined gap has a defined width, and wherein the nanometer The defined portion of the tube structure spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. 7. An electromechanical device comprising: a structure defining a gap having a gap width; a defined segment of a nanotube structure aligned over the structure and spanning the gap, the nanotube structure segment comprising a plurality of Nanotube, -39 - This paper size applies to China National Standard (CNS) A4 specification (210x297 male cage) At least some of the nanotubes have a length exceeding the gap width, the nanotube structure comprises a film of a nanotube; and a splint is arranged at each end of the two ends of the nanotube structure, And substantially aligned on at least a portion of the edges of the nanotube structure segment defining the gap. The electromechanical device of claim 7, wherein the splint is made of a conductive material. 9. The electromechanical device of claim 7, wherein the splint is formed of an electrically insulating material having a via that is filled with a conductive material to provide a The path of the electrical connection of the meter tube section. The electromechanical device of claim 9, wherein the through hole is filled with metal to provide a metal signal path to the nanotube structure. 11. The electromechanical device of claim 9, wherein the nanotube structure is composed of a nanotube structure having a porous portion. And the conductive material filling the through hole also fills at least some of the capillary holes of the nanotube structure. 12. The electromechanical device as described in claim 7 of the patent scope, -40 - the paper size is applicable to the Chinese National Standard (CNS) A4 specification (2i〇X297 mm) The medium-hemi-5 tube structure segment has a lithographically defined shape β. 13. The electromechanical device according to claim 7, further comprising a conductive line arranged in the gap and associated with the nano 5 The rice pipe structure segments are separated. 14. The electromechanical device of claim 7, wherein the splint is a first 〇-gap structure defined above the nanotube structure segment, and wherein the gap and the second gap are Each has a conductive line arranged therein. 15. The electromechanical device of claim 7, wherein the nanotube structure is composed of a nanotube having a porous portion, and wherein the splint is filled The nanotube structure is composed of at least some of the material of the capillary. 16', wherein the electromechanical device of claim 7 is further comprising at least one p-circuit ' in a spaced relationship with respect to the nanotube structure segment, and wherein the nanotube structure segment is electromechanically biased Move into contact with the 玄°Xuan line to take electrical stimulation of the line and the nanotube structure. 17. If the electromechanical device of claim 16 is applied, the contact of the 〃, '~ line is in a non-volatile state. /,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The electromechanical device of claim 16, wherein at least the conductive line has an interface material to change X S, '. The attraction between the segment and the s-shaped conductive line. The manufacturing method of the electromechanical device of the Ministry of Economic Affairs, the Intellectual Property Office of the 15th Ministry of Economics, comprises: providing a structure having a gap defining a width; forming a region of the sacrificial material in the gap; Forming a nanotube structure section on the region of the sacrificial material, wherein the 1Hai tube junction section comprises a film of a nanotube tube; j each end of the nanotube structure section is substantially arranged in the Providing a splint on at least a portion of the edges defining the gap; and removing the region of the sacrificial material such that the nanotube segment is clamped at each end of the article and suspended The gap is above and across the gap. 21. The method of manufacture of claim 20, wherein the defined length of the nanotube structure section slightly exceeds the width of the gap. -42 The paper size is applicable to China National Standard (CNS) A4 specification (21〇x297 mm). Order 1323479 A8 B8 C8 --------- - VI. Patent application scope 22. If the patent application scope is 2nd The manufacturing method according to the item, wherein the splint is composed of an insulating material. 23. The manufacturing method of claim 2, wherein the splint is composed of a conductive material. 24. The manufacturing method according to claim 20, wherein the nanotube structure is formed. The method comprises: forming a matte structure of a plurality of nanotubes and removing a portion of the structure to produce the nano 10 tube structure segment. 25. The method of manufacture of claim 24, wherein removing a portion of the structure comprises lithographic patterning and etching the structure. 26. The manufacturing method according to claim 2, wherein the nanotube structure segment is printed by the Ministry of Economic Affairs, Ministry of Economic Affairs, and the employee consumption cooperative of the Ministry of Economic Affairs, and is provided therein. The splint includes a material that provides at least some of the capillary pores that fill the segment of the nanotube structure. 27. The manufacturing method of claim 2, wherein the splint is made of an electrically insulating material, and the money is provided with a through hole defined by the method, wherein the method further comprises filling the electrically conductive material Through-hole to provide a plaque and too much heart to the electrical connection of the Nai water official section -43 - This paper scale applies to the Chinese National Standard (CNS) A4 specification (21〇X297 public Chu) 1323479 A8 , B8 C8 ~ - ' 1 ____D8 Sixth, the scope of the patent application ~ '-- the path. 28. The method of manufacture of claim 27, wherein the via is filled with metal to provide a metal signal path to the nanotube structure segment. The manufacturing method according to claim 27, wherein the nanotube structure is composed of a nanotube structure having a porous portion, and the through hole is filled therein. The electrically conductive material also fills at least some of the capillary pores of the nanotube structure section. 30. The method of manufacturing of claim 20, further comprising providing a conductive trace in the gap, the germanium being disposed below the region of the sacrificial material. 1. The manufacturing method of claim 20, wherein providing the splint comprises forming a second gap defined above the nanotube structure section. And wherein the method includes providing one of the conductive lines in the gap and the second gap. -44 - This paper size is applicable to China National Standard (CNS) A4 specification (210x297 mm)