TWI302042B - - Google Patents
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1302042 AOC-06-10-TW 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種高發光效率之發光二極體，尤指一種 利用不同光折射率之材料，交互堆疊來製作高反射率反射鏡 之設計者。 【先前技術】 按，發光二極體為一種利用金屬有機化學氣相沉積法 (M〇CVD)所成長的半導體化合物，其發光範圍從紫外光一 直到紅外光範圍，涵蓋整個人眼可辨識的波長範圍；而因為 其具有高壽命 '反應時間短、低驅動電壓、安全以及省電 等特性，使得發光二極體製作之發光元件，被廣泛地運用在 第三煞車燈、戶外看板、紅綠燈、手機背光等光源模組上。 而AlInGaP系列之半導體材料，由於基板的晶格常數與後續 蠢晶成長層必須相符，一般均選用GaAs基材（GaAs在此發 光範圍為吸光材料）；因此，A1InGap系列之發光二極體所發 出的光，有一半以上都被此吸光基材所吸收，乃有發光效率 鲁 不佳之問題。 次按，如第一圖所示，習知A1InGaP系列之發光二極體， 係在n-GaAs基材（1〇)上成長n_(AlxGai x)〇5ln()5P的下束缚 層（Cladding layer，21)，其X為A1的成分比由70%〜100%;再 成長（八1>^&1_>)〇.5111〇.5?的活性層（八(：1^6 1&}^1%22)，其；7為八1 的成分比由0%〜45%;接下來成長p-CAlxGa^OwIno.sP的上 束缚層（Cladding layer，23)，其X為A1的成分比由70%〜100%; 最後在上束缚層（23)上成長一電流擴散層（Current -5-1302042 AOC-06-10-TW IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode having high luminous efficiency, and more particularly to a material which utilizes different refractive indices of light and is stacked alternately to make a high The designer of the reflectivity mirror. [Prior Art] According to the light-emitting diode, a semiconductor compound grown by metal organic chemical vapor deposition (M〇CVD) has a light-emitting range from ultraviolet light to infrared light, covering the entire human-readable wavelength. Scope; because of its high lifetime, short reaction time, low driving voltage, safety and power saving, the light-emitting components made of light-emitting diodes are widely used in the third brake lights, outdoor billboards, traffic lights, mobile phones. Backlight and other light source modules. In the semiconductor material of the AlInGaP series, since the lattice constant of the substrate must be consistent with the subsequent stray crystal growth layer, a GaAs substrate (GaAs is used as the light absorbing material) is generally used; therefore, the light emitting diode of the A1InGap series is emitted. More than half of the light is absorbed by the light-absorbing substrate, which has the problem of poor luminous efficiency. Sub-press, as shown in the first figure, the light-emitting diode of the conventional A1InGaP series is grown on the n-GaAs substrate (1〇) to form the lower binding layer of n_(AlxGai x)〇5ln()5P (Cladding layer). , 21), whose X is the composition ratio of A1 from 70% to 100%; and then grows (eight 1 > ^ &1_>) 〇.5111 〇.5? active layer (eight (: 1^6 1&} ^1%22), which is the composition ratio of 8 to 1 from 0% to 45%; then the upper binding layer of p-CAlxGa^OwIno.sP (Cladding layer, 23), and the composition ratio of X to A1 From 70% to 100%; finally growing a current diffusion layer on the upper tie layer (23) (Current -5-
AOC-06-10-TW AOC-06-10-TW1302042AOC-06-10-TW AOC-06-10-TW1302042
spreading layer，24)，其可以選用 GaP、GaAsP、AlGaAs、ITO 以及ZnO等材料。而此習知AlInGaP系列之發光二極體， 因為GaAs基材（10)會吸收經由活性層（22)產生而射向GaAs 基材（10)的光，所以發光效率不佳。 再者，如第二圖所示，Sugawara 在 APL Vol.61，1775-1777 (1992)的期刊中，提出在 GaAs 基材（10)上方， n^AlxGa^ksIno.sP的下束缚層（21)下方，成長一多層結構的 分佈式布拉格反射層（Distributed Bragg Reflector，DBR，25)， 希望能利用DBR特性，反射射向GaAs基材（10)的光；另外為 了電流的擴散，使得電流不流向接墊（30)下方，所以在電流擴 散層（24)内製作一堵塞層（Block layer，26)，強迫電流流向發 光區；而利用此方式製作的發光二極體，其分佈式布拉格反 射層（25)，最多只能做到80%的反射率，所以能增加的發光效 率仍屬有限。 又，如第三圖所示，US 6797987 B2中所揭露之發光二極 體結構，係在GaAs基材（10)上以MOCVD進行磊晶成長，而 在GaAs基材（10)上方增加一餘刻終止層（Etching stop layer， 27)，可在把GaAs基材（10)移除時，不會傷害到磊晶疊層（2〇)， 以利將整個磊晶疊層（20)轉移到替代基材（40);此外，在電流 擴散層（24)製作AuBe、AuZn、CrAu等金屬歐姆接面（241)， 並沉積透明導電層（28)及金屬反射層（29)，乃利用金屬反射 層（29)反射由活性層（22)產生的光，而透明導電層（28)也肩 負傳導電流的任務以製作垂直結構的發光二極體；整個替代 基材（40)則包含了基板（41)、金屬歐姆接面（42)以及和蟲晶 疊層（20)黏合的金屬黏合層（43)。於是，該專利案所揭露的發 -6 -Spreading layer, 24), which can be selected from materials such as GaP, GaAsP, AlGaAs, ITO, and ZnO. In the conventional AlInGaP series of light-emitting diodes, since the GaAs substrate (10) absorbs light generated by the active layer (22) and is incident on the GaAs substrate (10), the light-emitting efficiency is not good. Furthermore, as shown in the second figure, Sugawara, in the journal APL Vol. 61, 1775-1777 (1992), proposes a lower tie layer of n^AlxGa^ksIno.sP over the GaAs substrate (10) (21 Underneath, a distributed Bragg Reflector (DBR, 25) with a multi-layer structure is expected to reflect the light incident on the GaAs substrate (10) by using the DBR characteristics. In addition, the current is diffused for current spreading. Without flowing under the pad (30), a blocking layer (26) is formed in the current spreading layer (24) to force current to flow into the light-emitting region; and the light-emitting diode fabricated by this method is distributed in Prague. The reflective layer (25) can only achieve a reflectivity of up to 80%, so the increased luminous efficiency is still limited. Moreover, as shown in the third figure, the light-emitting diode structure disclosed in US Pat. No. 6,797,987 B2 is epitaxially grown by MOCVD on the GaAs substrate (10), and more than one is added above the GaAs substrate (10). Etching stop layer (27), when the GaAs substrate (10) is removed, does not damage the epitaxial stack (2〇), so as to transfer the entire epitaxial stack (20) to Instead of the substrate (40); in addition, a metal ohmic junction (241) such as AuBe, AuZn, CrAu is formed in the current diffusion layer (24), and the transparent conductive layer (28) and the metal reflective layer (29) are deposited, using metal The reflective layer (29) reflects the light generated by the active layer (22), and the transparent conductive layer (28) also shoulders the task of conducting current to fabricate the vertical structure of the light emitting diode; the entire replacement substrate (40) contains the substrate (41), a metal ohmic junction (42) and a metal adhesion layer (43) bonded to the insect crystal laminate (20). Thus, the patent disclosed in the patent case -6 -
1302042 AOC-06-10-TW 光二極體結構，以金屬反射層反射發自活性層（22)的光， 其反射率取決於所選用的金屬材料，而且反射率也會隨透明 導電層（28)之材料及厚度有所變化，透明導電層（28)厚度越 厚，其光之穿透率會降低，間接造成整體的反射率降低。 【發明内容】 ‘ 本發明之主要目的，係欲解決先前技術發光效率不佳之 問題，而具有提昇發光效率之功效。 為達上述功效，本發明之結構特徵，係包含： # 一基材，將一基板製作有歐姆接面層，且覆蓋一金屬黏 合層；以及 一磷化銘銦鎵（AlInGaP)半導體磊晶疊層，藉金屬黏合 層黏合於該基材，而由上而下包含：一蝕刻終止層，形成於一 已移除之基材表面；一第一束缚層，形成於該蝕刻終止層表 面；一活性層，形成於該第一束缚層表面；一第二束缚層，形成 於該活性層表面，並钱刻製作出供反射鏡埋設之圖案凹槽： 以及一金屬歐姆接面層，形成於該第二束缚層表面，且於表 $ 層製作接觸金屬及結合墊者。其中，該反射鏡係根據抗反射 薄膜（AR coating)技術的設計方式，將不同折射率的材料交 互堆疊所製作。 【實施方式】 首先，請參閱第四圖所示，本發明係先在GaAs基材（10) 上，利用金屬有機化學氣相沉積法成長三-五族半導體磊晶 疊層（50)，整個磊晶疊層（50)包含··蝕刻終止層（51); n-(AlxGai-x)〇.5In〇.5P的第一束缚層（52)，x為A1的成分比由1302042 AOC-06-10-TW Photodiode structure, which reflects light from the active layer (22) with a metal reflective layer, the reflectivity of which depends on the metal material chosen, and the reflectivity also follows the transparent conductive layer (28 The material and thickness of the transparent conductive layer (28) are thicker, and the light transmittance is lowered, which indirectly causes the overall reflectance to decrease. SUMMARY OF THE INVENTION The main object of the present invention is to solve the problem of poor luminous efficiency of the prior art, and to improve the luminous efficiency. In order to achieve the above effects, the structural features of the present invention comprise: # a substrate, an ohmic junction layer is formed on a substrate, and a metal adhesion layer is covered; and a phosphating indium gallium (AlInGaP) semiconductor epitaxial stack The layer is bonded to the substrate by a metal bonding layer, and comprises: an etch stop layer formed on a surface of the removed substrate; a first binding layer formed on the surface of the etch stop layer; An active layer is formed on the surface of the first binding layer; a second binding layer is formed on the surface of the active layer, and a pattern groove for embedding the mirror is prepared: and a metal ohmic junction layer is formed on the surface The second tie layer surface, and the contact layer of the metal and the bond pad are made on the surface of the table. Among them, the mirror is made by stacking materials of different refractive indexes according to the design of the anti-reflective film (AR coating) technology. [Embodiment] First, referring to the fourth figure, the present invention first grows a three-five-group semiconductor epitaxial stack (50) on a GaAs substrate (10) by metal organic chemical vapor deposition. The epitaxial layer stack (50) comprises an etch stop layer (51); a first tie layer (52) of n-(AlxGai-x)〇.5In〇.5P, and x is a composition ratio of A1
AOC-06-10-TW 1302042 70%〜1 OimXAlyGabyV.sIno.sP 的活性層（53)，y 為 A1 的成分比 由 0%〜45%;p-(AlxGai_x)〇.5ln〇.5P 的第二束缚層（54)，x 為 A1 的成分比由70%〜100%。然後，在第二束缚層（54)上，利用黃 光製程去製作出不同的圖案，其圖案可以為規格性分佈的六 角形、正方形、圓形圖案，亦或是其他特殊圖案皆可以；而在 第二束缚層（54)表面製作出圖案之後，利用物理性蝕刻方式， 如ICP、RIE等，亦或是化學性蝕刻，触刻藥水如：1H3S04 : 10H2O: 5H202, lH3P〇4: 5H20: 1H202 等比例藥水，蝕刻出 如表面圖案的凹槽（541);並利用蒸鍍方式，而以Si02、Ti02、 _ Al2〇3、Ta205、Si3N4、Zr〇2、Nb2〇5、SiO、Ya2〇3、MgF2、AOC-06-10-TW 1302042 70%~1 OimXAlyGabyV.sIno.sP active layer (53), y is the composition ratio of A1 from 0% to 45%; p-(AlxGai_x)〇.5ln〇.5P The second binding layer (54), x is the composition ratio of A1 from 70% to 100%. Then, on the second binding layer (54), a yellow light process is used to create different patterns, and the pattern can be a hexagonal, square, circular pattern of a general distribution, or other special patterns; After the pattern is formed on the surface of the second tie layer (54), the physical etching method, such as ICP, RIE, or the like, or chemical etching, such as: 1H3S04: 10H2O: 5H202, lH3P〇4: 5H20: 1H202 Proportioned syrup, etching a groove (541) such as a surface pattern; and using evaporation method, and using SiO 2 , TiO 2 , _ Al 2 〇 3 , Ta 205 , Si 3 N 4 , Zr 〇 2 , Nb 2 〇 5 , SiO , Ya 2 〇 3, MgF2
CaF2、ZnS、ZnO、ITO…等材料，根據光學薄膜的設計方式， 利用其折射率的不同，將南低介電係數材料相互交錯，製作 出南反射率反射鏡（55)，而置於第二束缚層（5 4)利用彳|虫刻方 式所製作出來的圖案凹槽（541)内部，把第二束缚層（54)填平 整。另在高效率反射鏡（55)製作完後，在第二束缚層（54)表面 覆蓋一層金屬歐姆接面層（5 6)，此金屬歐姆接面層（5 6)主要 是進行高溫融合製作歐姆接面，以利發光二極體運作，Au_Be # & Au_Zn & Au-Cr等合金金屬都是不錯的選擇。 再者，請參閱第五圖所示，為了讓發光二極體的發光效 率增加，本發明另以替代基材（60)取代GaAs基材（1〇)，因為 在磊晶疊層（50)上有製作有高效率反射鏡（55)，所以替代基 材（60)是否會吸光就不是重點，可以選擇si、GaP、Moly、 GaAs、Cu···等。又因本發明為垂直元件結構，所以在替代基 材（60)之基板（61)上需製作歐姆接面，所以歐姆接面層（62) 為基板（61)的歐姆接面製作，最後再覆蓋一層金屬黏合層 -8 -Materials such as CaF2, ZnS, ZnO, ITO, etc., according to the design method of the optical film, the south low dielectric constant materials are interdigitated by the difference in refractive index, and a south reflectance mirror (55) is produced. The second binding layer (54) is filled with the second binding layer (54) by using the inside of the pattern groove (541) which is made by the smashing method. After the high-efficiency mirror (55) is finished, the surface of the second tie layer (54) is covered with a metal ohmic junction layer (56). The metal ohmic junction layer (56) is mainly made by high-temperature fusion. The ohmic junction is used to facilitate the operation of the LED, and alloy metals such as Au_Be # & Au_Zn & Au-Cr are good choices. Furthermore, referring to the fifth figure, in order to increase the luminous efficiency of the light-emitting diode, the present invention replaces the GaAs substrate (1) with the replacement substrate (60) because of the epitaxial stack (50). There is a high-efficiency mirror (55), so it is not important to replace the substrate (60) whether it absorbs light. You can choose si, GaP, Moly, GaAs, Cu, etc. Since the present invention is a vertical element structure, an ohmic junction is required on the substrate (61) instead of the substrate (60), so the ohmic junction layer (62) is made of the ohmic junction of the substrate (61), and finally Cover a layer of metal bonding layer-8 -
AOC-06-10-TW AOC-06-10-TW1302042 (63)，可選擇Au、Al、Cu。接著，如第六圖所示，移除暫時性 GaAs基材（10)，而把磊晶疊層（50)移轉至替代基材（60)上，並 在蝕刻終止層（51)上製作接觸金屬（Contact Metal，57)及結 合墊（Bonding Pad，58)。 基於如是之構成，本發明的優點在於擁有高效率反射 鏡（55)，而其利用光學薄膜技術，採用抗反射薄膜（AR coating) 製作；此技術主要利用不同的材料，其折射率η值的不同，以 高低η值相互交替，每個高低η值交替一次為一對，而三對以 上的高低η值交互堆疊，反射率可以達到98%以上，比金屬反 射鏡反射效率高；且可以針對發光二極體的發光波長去調整 其反射率，而此反射鏡（55)在經過高溫製作金屬歐姆接面層 (56)時，也不會破壞跟二-五族半導體蠢晶之接面處。 此外，如第七圖所示，發光二極體之發光原理，主要是電 流經過活性層（53)，電子轉換成光子造成發光；因此，電流怎 麼流過活性層（53)，對發光二極體的發光效率有很大的影 響。一般電流主要是由接觸金屬（57)直接穿過活性層（53)， 致使發光效率最強的部分，往往都在接觸金屬（57)下方，但所 發出來的光反而都被接觸金屬（5 7)擋住，乃無法導出發光二 極體外部，因此發光效率不佳。而本發明將高效率反射鏡（55) 植入於三-五族半導體磊晶内部，而反射鏡（55)本身是絕緣材 料，對於半導體蠢晶具有電流堵塞（Current Blocking)的效果， 因相對接觸金屬（57)來說，直接穿過活性層（53)之電流路徑 受到阻擋，電流被迫在rKAlxGa^ksIno.sP的第一束缚層（52) 往橫的方向行進，當走到在下方無絕緣材料處，才會往下穿 過活性層（53)，使得經過活性層（53)的電流所產生的光，上方 -9-AOC-06-10-TW AOC-06-10-TW1302042 (63), you can choose Au, Al, Cu. Next, as shown in the sixth figure, the temporary GaAs substrate (10) is removed, and the epitaxial layer (50) is transferred onto the replacement substrate (60) and fabricated on the etch stop layer (51). Contact metal (57) and bonding pad (Bonding Pad, 58). Based on the constitution, the present invention has the advantage of having a high-efficiency mirror (55) which is fabricated using an optical thin film technique using an AR coating; this technique mainly utilizes different materials, and has a refractive index η value. Different, the high and low η values alternate with each other, each high and low η value alternates once as a pair, and three or more pairs of high and low η values are alternately stacked, the reflectivity can reach 98% or more, and the reflection efficiency is higher than that of the metal mirror; The illuminating wavelength of the illuminating diode is adjusted to reflect the reflectivity, and the mirror (55) does not damage the junction of the bismuth-family semiconductor when the metal ohmic junction layer (56) is fabricated at a high temperature. . In addition, as shown in the seventh figure, the principle of light emission of the light-emitting diode is mainly that the current passes through the active layer (53), and the electrons are converted into photons to cause light emission; therefore, how the current flows through the active layer (53), and the light-emitting diode The luminous efficiency of the body has a great influence. Generally, the current is mainly directly passed through the active layer (53) by the contact metal (57), so that the portion with the strongest luminous efficiency is often under the contact metal (57), but the emitted light is instead contacted with the metal (5 7 ) Blocking, it is impossible to derive the outside of the light-emitting diode, so the luminous efficiency is not good. In the present invention, the high-efficiency mirror (55) is implanted inside the epitaxial crystal of the three-five semiconductor, and the mirror (55) itself is an insulating material, which has a current blocking effect on the semiconductor stray crystal, because In the case of contact metal (57), the current path directly through the active layer (53) is blocked, and the current is forced to travel in the lateral direction of the first tie layer (52) of rKAlxGa^ksIno.sP when walking down Without the insulating material, it will pass down through the active layer (53), so that the light generated by the current through the active layer (53), above the -9-
AOC-06-10-TW AOC-06-10-TW1302042 無任何物質擋住，因而提高發光二極體的發光效率。其中， 當反射鏡（55)愈接近活性層（53)時，其電流堵塞的效果越大， 而反射鏡（55)距離活性層（53)的距離約為0.5μηι〜3μ】η之間 為佳。 又，本發明之反射鏡（55)是埋入p^AlxGaiJuInwP的 第二束缚層（54)内部，而第二束缚層（54)上所蝕刻出來的圖 案凹槽（541)，其蝕刻深度會跟所計算出來的反射鏡（55)高度 一致，這樣置放反射鏡（55)在第二束缚層（54)内部時，其表面 的南低起伏差可以控制在1 〇〇nm之間，這樣的好處是在做蠢 晶疊層（50)移轉時，表面越平整，黏合良率會越高，殘餘應力 越小，對於發光二極體的可靠度越好。 綜上所述，本發明所揭示之技術手段，確具「新穎性」、 「進步性」及「可供產業利用」等發明專利要件，祈請鈞 局惠賜專利，以勵發明，無任德感。 惟，上述所揭露之圖式、說明，僅為本發明之較佳實施例， 大凡熟悉此項技藝人士，依本案精神範疇所作之修飾或等效 變化，仍應包括本案申請專利範圍内。 -10-AOC-06-10-TW AOC-06-10-TW1302042 No material is blocked, thus improving the luminous efficiency of the light-emitting diode. Wherein, when the mirror (55) is closer to the active layer (53), the effect of current clogging is greater, and the distance between the mirror (55) and the active layer (53) is about 0.5 μm to 3 μm. good. Moreover, the mirror (55) of the present invention is embedded inside the second tie layer (54) of p^AlxGaiJuInwP, and the pattern groove (541) etched on the second tie layer (54) has an etching depth. It is highly consistent with the calculated mirror (55), so that when the mirror (55) is placed inside the second tie layer (54), the south-low fluctuation of the surface can be controlled between 1 〇〇 nm, so that The advantage is that the flatter the surface, the higher the adhesion yield and the smaller the residual stress, the better the reliability of the light-emitting diode when the stupid laminate (50) is transferred. In summary, the technical means disclosed in the present invention have the invention patents such as "novelty", "progressiveness" and "available for industrial use", and pray for the patent to be invented by the bureau. German sense. However, the drawings and descriptions disclosed above are only preferred embodiments of the present invention, and those skilled in the art will be able to include modifications or equivalent changes in the spirit of the present invention. -10-
AOC-06-10-TW 1302042 【圖式簡單說明】 第一圖係傳統發光二極體之結構說明圖。 第二圖係具DBR結構之發光二極體結構說明圖。 第三圖係具金屬反射鏡之發光二極體結構說明圖。 第四圖係本發明之磊晶疊層結構說明圖。 第五圖係本發明之替代基材結構說明圖。 第六圖係本發明之整體結構說明圖。 第七圖係本發明之電流堵塞效果說明圖。 馨 【主要元件符號說明】 (10)基材 (20) 蠢晶豐層 (21) 下束缚層 (22) 活性層 (23) 上束缚層 (24) 電流擴散層 (241)金屬歐姆接面 ▲ (25)布拉格反射層 (26) 堵塞層 (27) 蝕刻終止層 (28) 透明導電層 (29) 金屬反射層 (30) 接墊 (40) 替代基材 (41) 基板 (42) 金屬歐姆接面 -11 -AOC-06-10-TW 1302042 [Simple description of the diagram] The first diagram is a structural diagram of a conventional light-emitting diode. The second figure is an explanatory diagram of the structure of the light-emitting diode of the DBR structure. The third figure is an explanatory diagram of the structure of the light-emitting diode with a metal mirror. The fourth figure is an explanatory view of the epitaxial laminate structure of the present invention. The fifth drawing is an explanatory view of the alternative substrate structure of the present invention. The sixth drawing is an explanatory view of the entire structure of the present invention. The seventh diagram is an explanatory diagram of the current clogging effect of the present invention. Xin [Major component symbol description] (10) Substrate (20) Stupid crystal layer (21) Lower binding layer (22) Active layer (23) Upper binding layer (24) Current diffusion layer (241) Metal ohmic junction ▲ (25) Bragg reflection layer (26) Blocking layer (27) Etch stop layer (28) Transparent conductive layer (29) Metal reflective layer (30) Pad (40) Substitute substrate (41) Substrate (42) Metal ohmic connection Face-11 -
AOC-06-10-TW AOC-06-10-TW1302042 (43)金屬黏合層 (50) 蠢晶豐層 (51) 蝕刻終止層 (52) 第一束缚層 (53) 活性層 (54) 第二束缚層 (541)圖案凹槽 (55) 反射鏡 (56) 金屬歐姆接面層 (57) 接觸金屬 (58) 結合墊 (60) 替代基材 (61) 基板 (62) 歐姆接面層 (63) 金屬黏合層AOC-06-10-TW AOC-06-10-TW1302042 (43) Metal adhesion layer (50) Stupid crystal layer (51) Etch stop layer (52) First tie layer (53) Active layer (54) Second Tethering layer (541) pattern groove (55) mirror (56) metal ohmic junction layer (57) contact metal (58) bonding pad (60) instead of substrate (61) substrate (62) ohmic junction layer (63 Metal bonding layer
-12--12-
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