TWI246448B - Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby - Google Patents

Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby Download PDF

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Publication number
TWI246448B
TWI246448B TW090120699A TW90120699A TWI246448B TW I246448 B TWI246448 B TW I246448B TW 090120699 A TW090120699 A TW 090120699A TW 90120699 A TW90120699 A TW 90120699A TW I246448 B TWI246448 B TW I246448B
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Taiwan
Prior art keywords
polishing
substrate
carrier
head
during
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TW090120699A
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Chinese (zh)
Inventor
Jiro Kajiwara
Gerard S Moloney
Huey-Ming Wang
David A Hansen
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Multi Planar Technologies Inc
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Priority claimed from US09/652,854 external-priority patent/US6540590B1/en
Priority claimed from US09/652,855 external-priority patent/US6527625B1/en
Application filed by Multi Planar Technologies Inc filed Critical Multi Planar Technologies Inc
Application granted granted Critical
Publication of TWI246448B publication Critical patent/TWI246448B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • B24B37/32Retaining rings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Chemical mechanical polishing/planarization (CMP) apparatus, method, and substrate produced thereby. Polishing surface with non-uniform recesses therein. CMP head and method having integral slurry dispensing mechanism. CMP apparatus and method having rotating retaining ring. CMP apparatus and method having soft backed polishing head. CMP providing efficient use of slurry in polishing and planarizing processes. Substrate (semiconductor wafer) produced by CMP apparatus or method. In one embodiment, apparatus (100) includes subcarrier (160) with flexible member (185) attached to lower substrate holding surface (165). Flexible member (185) has hole(s) (195) therein so that pressurized fluid introduced between flexible member and subcarrier (160) directly presses substrate (105) against polishing surface (125). Number and size of holes (195) are selected to provide sufficient friction between flexible member (185) and substrate (105) to cause rotation when drive mechanism rotates subcarrier (160). Subcarrier (160) having port adapted to draw vacuum on cavity (215) between lower surface (165) and flexible member (185). Flexible member and substrate (105) serve as valve (225) to isolate port from cavity when a predetermined vacuum has been achieved.

Description

1246448 A7 B7 五、發明說明G ) [發明範疇] 概略而言本發明係有關抛光(polishing)及平坦化基板 (planarizing substrates)之系統、裝置及方法,特別係有關 化學機械平坦化或拋光(CMP)裝置及方法。 [背景] 化學機械平坦化或拋光俗稱CMP,是一種平坦化或抛 光半導體及其它類型基板之方法。於某些處理步驟間平坦 化半導體基板或晶圓表面可允許更多層電路層於垂直方向 堆積於裝置上。隨著結構大小的縮小、密度的增高以及半 導體晶圓尺寸的加大,CMP處理要求愈來愈嚴格苛刻。由 以低成本製造半導體成品觀點視之,晶圓與晶圓間的處理 均勻性以及跨一個晶圓全表面平坦度的均勻性乃重要議 題。隨著半導體晶圓表面之結構或構造大小的逐漸縮小, 今曰典型為約0.2微米(em)’有關非均勻平坦化的問題也 增加。此種問題俗稱晶圓内部非均勻(Within Wafer Non-Uniformity,WIWNU)問題。 經濟部智慧財產局員工消費合作社印製 5己憶界已知有多項原因促成均勻問題。包括於平坦化 過程中施加於晶圓的晶圓背側壓力,拋光墊(p〇Hshing pad) 於晶圓邊緣比較於晶圓中區之交互作用典型差異造成的邊 緣效應非均勻’以及金屬及/或氧化物層之非一致沉積可藉 由平坦化或拋光過程調整材料去除情況予以補償。但同時 解決全部問題的影響之努力迄今為止尚未完全成功。 有關晶圓背側拋光壓力性質,習知機械典型使用硬質 背襯拋光頭(polishingh head,下文中有時簡稱為“頭,,,hea(j) 91874 本纸張尺度適用中國國家標準(CNS)A4規格(2〗〇χ 297公釐) 1246448 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(2 ) 來將晶圓向拋光面推壓,換言之,拋光頭具有硬質之承受 面直接推壓半導體晶圓背側。結果拋光頭之承受面的任何 變化,或晶圓與承受面間捕捉的任何材料壓力將導致壓力 非均勻施加於晶圓背側。如此,晶圓正面典型未能隨形於 抛光面’結果導致平坦化不均勻。此外,此種硬質背頭設 计常需利用相對高的拋光壓力(例如約6 psi至約8 pSi壓力) 來提供晶圓與拋光面間合理的順形程度。此種相對高壓力 有效變形晶圓,造成晶圓某些區去除過多材料,而其它區 去除的材料量過小結果導致平坦化程度不良。 試圖經由提供插件介於承受面與欲拋光的晶圓間來 彌補前述硬背頭的問題,試圖提供於硬背系統中的某種柔 軟度。此種插件俗稱做晶圓插件(wafer insert)。此種插件 成問題’原因為晶圓插件經常導致製程的變異,結果造成 晶圓與晶圓間的變異。此種變異並非常數通常也無法測 疋 變異的一項問題為吸收抛光過程使用的水或其它流體 如料漿。由於插件吸收水量隨著壽命的增加,因此經常有 各晶圓的變異問題。此種製程變異可經由於使用前將插件 預先泡在水中預先調理插件以及經由於插件特性改變至無 法接受程度之前更換插件而將此種製程變異控制至有限程 度。如此’讓插件初期使用的表現與後期使用類似,但如 此將增加設備的維護成本且降低製程產出量(pr〇cess throughput)。此外,由於例如插件的厚度變化、續件的毅 擅以及材料被捕捉於硬背頭與插件或插件與晶圓間而仍觀 察到無法接受的製程變異。 -裝—— (請先閱讀背面之注意事1填寫本頁) · 本纸張尺度適用中國國家標準(CNS)A4規格(210^ 297公釐) 2 91874 1246448 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(3 ) 使用插件也要求精密控制插件欲黏著的全體表面,原 因在於頭表面的任何非均勻、不完美、或偏離平坦或平行 典型將表現為跨全晶圓表面之平坦化變異。例如,於習知 頭製造鋁板或陶瓷板然後於架設於頭之前經過擦光與拋 光。此種製法造成頭與機器的成本增高,特別於設置多頭 時尤為如此。 另一方面,當使用軟背頭時,當晶圓被壓迫背向拋光 塾時’插件的軟性材料不會扭曲晶圓❶結果,可使用較低 撤光壓力,可達成晶圓正面對拋光墊的隨形性不會扭曲, 因此可達成抛光以均勻性及良好平坦度二者。可達成較佳 平坦化均勻性’至少有部份原因在於晶圓上各個晶粒之類 似結構的拋光速率相等之故。 近年來’也冒經試圖利用軟背頭,但未能全然滿意。 一類型軟背頭述於Shendori之美國專利第6,〇19,671號,以 引用方式併入此處。Shendon教示拉張跨頭下表面的膜或撓 性件來形成腔穴或空腔,該腔六經加壓來將基板向拋光面 推壓。雖然此種辦法比較帶有或未帶有插件的硬背頭已有 顯著改良,但由於多項理由故,此種辦法仍未臻全然滿意。 此種辦法有一項問題為由於材料被捕捉於獏與晶圓間而無 法減少或消除非均勻性。另一項問題為於載荷或卸載操作 期間由於膜的存在而無法使用真空來夾持晶圓至頭。此 外’使用膜由於引進多項變化故實際上增加非均勻性,例 如跨膜表面之厚度或撓性變化以及不當架設的膜可能起 皺0 表纸張&度適用中國國家標準(CNS)A4規格(210 x 297公餐) ^ --------^ -------- (請先閱讀背面之注意事項再填寫本頁)1246448 A7 B7 V. OBJECTS OF THE INVENTION G) [Scope of the Invention] The present invention relates generally to systems, devices and methods relating to polishing and planarizing substrates, particularly to chemical mechanical planarization or polishing (CMP). ) Apparatus and method. [Background] Chemical mechanical planarization or polishing, commonly known as CMP, is a method of planarizing or polishing semiconductors and other types of substrates. Flattening the semiconductor substrate or wafer surface between certain processing steps allows more layers of circuitry to be stacked on the device in a vertical direction. As structure sizes shrink, density increases, and semiconductor wafer sizes increase, CMP processing requirements become more stringent. From the standpoint of manufacturing semiconductor products at low cost, uniformity of processing between wafers and wafers and uniformity of flatness across the entire surface of a wafer are important issues. As the structure or configuration of the surface of a semiconductor wafer is gradually reduced, the problem of non-uniform planarization is typically increased by about 0.2 micrometers (em). This type of problem is commonly referred to as the Inside Wafer Non-Uniformity (WIWNU) problem. Printing by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumers' Cooperatives, has been known to have a number of reasons for uniformity. Including the backside pressure applied to the wafer during the planarization process, the polishing pad (p〇Hshing pad) is non-uniform in the edge effect due to the typical difference in the interaction between the wafer edge and the mid-wafer region, and the metal and The non-uniform deposition of the oxide layer can be compensated for by adjusting the material removal by a planarization or polishing process. But efforts to address the impact of all problems have not been fully successful to date. Regarding the polishing properties of the back side of the wafer, conventional mechanical tools typically use a hard backing polishing head (hereinafter sometimes referred to as "head,,, hea(j) 91874. This paper size applies to the Chinese National Standard (CNS). A4 specification (2〗 297 297 mm) 1246448 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 V. Invention description (2) to push the wafer to the polished surface, in other words, the polishing head has a hard bearing surface Directly pushing the back side of the semiconductor wafer. As a result, any change in the bearing surface of the polishing head, or any material pressure trapped between the wafer and the bearing surface, will result in a non-uniform application of pressure to the back side of the wafer. Thus, the front side of the wafer is typically not The ability to conform to the polished surface' results in uneven planarization. In addition, such a rigid back design often requires a relatively high polishing pressure (eg, from about 6 psi to about 8 pSi) to provide between the wafer and the polishing surface. Reasonable degree of conformity. This relatively high pressure effectively deforms the wafer, causing some areas of the wafer to remove excess material, while the amount of material removed in other areas is too small, resulting in poor planarization. The figure compensates for the aforementioned hard-back problem by providing a plug-in between the receiving surface and the wafer to be polished, attempting to provide some softness in the hard back system. This type of insert is commonly referred to as a wafer insert. This type of plug-in is a problem' because the wafer plug-in often causes variations in the process, resulting in wafer-to-wafer variation. This variation is not constant and usually cannot be measured. One of the problems is the absorption of water used in the polishing process. Or other fluids such as slurry. Because the amount of water absorbed by the insert increases with the life, there are often variations in the wafers. This process variation can be pre-conditioned in the water before the plug-in is pre-conditioning and the plug-in characteristics This process variation is controlled to a limited extent by changing the plug-in before changing to an unacceptable level. So 'the initial use of the plug-in is similar to the post-use, but this will increase the maintenance cost of the device and reduce the process throughput (pr〇cess) In addition, due to, for example, the thickness of the plug-in, the continuation of the continuation, and the material being captured in the hard back Unacceptable process variations are still observed between plug-ins or plug-ins and wafers. -Installation - (Please read the note on the back 1 to fill out this page) · This paper scale applies to China National Standard (CNS) A4 specification (210 ^ 297 mm) 2 91874 1246448 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed A7 B7 V. Invention Description (3) The use of plug-ins also requires precise control of the entire surface of the plug to be adhered to, due to any non-uniformity of the surface of the head. Perfection, or deviation from flatness or parallelism, will typically manifest as flattening variations across the entire wafer surface. For example, a conventional aluminum or ceramic plate is fabricated and then polished and polished before being placed on the head. The cost of the machine is increased, especially when setting up long positions. On the other hand, when a soft back is used, the soft material of the insert does not distort the wafer when the wafer is pressed back toward the polishing crucible. A lower extinction pressure can be used to achieve a wafer front facing polishing pad. The shapeability is not distorted, so polishing can be achieved with both uniformity and good flatness. Better flattening uniformity can be achieved, at least in part, because the polishing rates of similar structures for individual grains on the wafer are equal. In recent years, it has also tried to use the soft back, but it has not been fully satisfied. One type of soft back is described in U.S. Patent No. 6, s. Shendon teaches stretching the film or flexure of the lower surface of the head to form a cavity or cavity that is pressurized to push the substrate against the polishing surface. Although this approach has been significantly improved with respect to hardheads with or without inserts, this approach has not been fully satisfactory for a number of reasons. One problem with this approach is that the material cannot be reduced or eliminated due to trapping between the crucible and the wafer. Another problem is that vacuum cannot be used to hold the wafer to the head due to the presence of the film during the load or unload operation. In addition, the use of membranes actually increases non-uniformity due to the introduction of multiple changes, such as thickness or flexibility of the transmembrane surface and improper erection of the membrane may wrinkle. Table paper & Applicable to China National Standard (CNS) A4 specifications (210 x 297 public) ^ --------^ -------- (Please read the note on the back and fill out this page)

01 «Τ1 1246448 經濟部智慧財產局員工消費合作社印製 91874 A7 b/ 五、發明說明(4 ) 其它軟背頭設計係使用晶圓邊緣與頭間密封來形成 腔穴,然後加壓而於拋光與平坦化期間直接壓迫晶圓背向 抛光面。一種辦法述於Breivogel等人之美國專利第 5,635,083號,以引用方式併入此處。Breivogel教示使用唇 封背向晶圓背側外緣而介於頭與晶圓間形成峰,該峰欲容 、的加壓空氣。不幸,雖然此種辦法提供軟背頭,可消除使 用硬背頭以及帶有膜的軟背頭關聯的若干問題,但無法讓 晶圓與承受面間產生足夠接合來對機器中的晶圓提供扭 矩’此處頭於拋光操作期間旋轉。此種辦法之另一項目的 為雖然可使用真空來夾持晶圓與頭,但由於晶圓只於邊緣 被支撐’故發生無法接受的彎曲程度,結果導致晶圓受損 或耗損。 至於校正或補償邊緣樾光效應,也曾經嘗試調整固持 裱形狀以及修改固持環壓力,讓由晶圓接近固持環被去除 的材料量經調整。典型,由晶圓邊緣去除材料量較多,換 吕之晶圓邊緣被過度拋光。為了校正此種過度拋光的情 况’通常固持環壓力係調整為略高於晶圓背側壓力,讓該 區的拋光量略為藉固持環所壓縮,在固持環的數毫米(㈤⑷ 粑圍内由晶圓去除的材料減少。但,即使此種努力仍未臻 滿意,原因在於晶圓外周緣的平坦化壓力只能基於固持環 壓力做間接調整。無法伸長固持環壓縮效應的有效距離至 曰日圓邊緣的任意距離。也無法各自獨立調整固持環壓力、 邊緣壓力或晶圓總背側壓力來達成預定效果。 習知CMP頭使用固持環的另一項問題為固持環下表 表纸張尺度適國家標準(cns)A4^^7^:^ --------訂·--------' f請先閱請背面之注意事項再填寫本頁} 1246448 A7 五、發明說明(5 ) 面任何指定點係對應於整㈣光操作期間被夾持於副載具 上的晶圓指定部份。如此,固持援 ^ 符衣下表面的高點或低點也 將導致晶圓的不平坦拋光。雖然,可將ϋ持環下表面加工 成有高度平坦度’但耗費不貲’特別由於固持環是消耗品, 固持環隨著晶圓的拋光被磨耗而經常需要更換。 有關希望調整材料去除情況來調冑晶圓之非均句沉 積’即使曾經努力但也極少提供此項補償方法或機器。非 均勻沉積來自於於晶圓上形成的電路結構或來自於沉積層 特性。例如’於高速積體電路已經逐漸變常見的鋼層形: 晶圓中心比邊緣更厚的凸層。但希望有—魏光方法及裝 置其可提供接近晶圓中心比邊緣有更高去除的速率。 訂 於有 關 料 漿純度 以 及 特 別懸 浮於 料 漿 中 的 磨 粒 子 大 小 有 經 濟 嚴格 規 定 ,因而 料 漿價 格變 昂貴 〇 此 外 , 為 了 防 止 污 染 以 部 智 及提供 致性結 果 J 料 漿通 常未循環利 用 或 回 收利 用 〇 如 財 產 此, 習 知 CMP之 一 項 重 大操作成 本 為 料 漿 成 本 〇 局 員 工 因 此 ,仍然 需 要 有 一種 裝置 及 方 法 其 可 提供 絕 佳 平 面 消 費 人 化, 控 制 邊緣平 面 化 效 果, 允許 調 整 晶 圓 材 料 去 除情 況 俾 作 社 補償 晶 圓 上各層 的 沉 積 非均 勻。 進 — 步 需 要 有 一 種 裝 置 及 印 製 方法 其 可 讓晶圓 藉 真 空 夾持 於軟 背 頭 > 同 時減 少 或 消 除 晶 本紙張&度適用中國國家標準(CNS)A4規烙(210 X 297公楚) 最後習知CMP裝置及方法之問題為料裝的使用益效 率與浪費。料漿通常為具有磨蝕材料懸浮於其中的化學活 性液體,用來提升材料由晶圓表面去除速率。由於料=係 配送於頭前方的拋光面上,故典型須配送過量料漿俾確保 料漿流過抛光面時可覆蓋晶圓與拋光面間的全體面積。由 經濟部智慧財產局員工消費合作社印製 1246448 A7 I------ Β7 —_ 五、發明說明(6 ) 圓上的應力。進一步需要一種CMp裝置其可提供足量料漿 丨至抛光面而不會造成過量浪費。 [發明之概要說明] 概略而言本發明係有關一種CMP系統、裝置及方法用 於拋光及平坦化基板而達成跨基板面的高度平坦化均勻 度。本發明包括無數與化學機械拋光(CMp)相關之系統、 裝置、'構及方法特徵。就一方面而言,本發明提供一種 有個拋光面帶有非均勻凹部於其中之化學機械拋光裝置及 方法。於另一方面,本發明提供一種具有整合一體料漿配 送機構至化學機械拋光頭及方法。於又另一方面,本發明 提供一種具有旋轉固持環之化學機械拋光裝置及方法。於 又另一方面,本發明提供一種具有軟背拋光頭之化學機械 拋先裝置及方法。又另一方面,本發明提供更有效利用料 漿於拋光及平坦化處理之裝置及方法。又另一方面,本發 明提供一種藉本發明裝置或方法製造工作件如半導體晶 圓。 θ 根據本發明之另一方面,用於定位具有一表面的基板 於拋光裝置拋光面上的拋光頭設置用於處理基板俾由其中 去除材料。拋光頭包括載具帶有撓性件,如附裝於底面之 膜片’於抛光操作期間基板係被夹持於該底面上。撓性件 有個承受面設計適合承受基板於其上,以及承受面有多個 孔延伸貫穿撓性件。當基板被夹持於撓性件的承受面上 時,由載具下表面、撓性件與基板界定封閉腔穴(cavity) 或空腔(chamber)。腔穴設計適合於拋光操作期間將基板直 本纸張尺度適用中國國家標準(CNS)AO見格(210 X 297公釐) 6 9187401 «Τ1 1246448 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 91894 A7 b/ V. Invention Description (4) Other soft back designs use wafer edge and head seals to form cavities, then pressurize and polish Directly pressing the wafer away from the polishing surface during planarization. One of the methods is described in U.S. Patent No. 5,635,083, the disclosure of which is incorporated herein by reference. Breivogel teaches the use of a lip seal to the outer edge of the back side of the wafer to form a peak between the head and the wafer, which is the desired pressurized air. Unfortunately, while this approach provides a soft back, it eliminates several problems associated with the use of a hard back and a soft back with a film, but does not allow sufficient bonding between the wafer and the receiving surface to provide wafers in the machine. The torque 'here is rotated during the polishing operation. Another item of this approach is that although the vacuum can be used to hold the wafer and the head, the wafer is only supported at the edge, so an unacceptable degree of bending occurs, resulting in damage or loss of the wafer. As for correcting or compensating the edge calendering effect, attempts have also been made to adjust the shape of the retaining crucible and modify the holding ring pressure to adjust the amount of material removed from the wafer near the retaining ring. Typically, the amount of material removed from the edge of the wafer is large and the edge of the wafer is over-polished. In order to correct this over-polishing situation, the holding ring pressure is usually adjusted to be slightly higher than the back side pressure of the wafer, so that the polishing amount in this area is slightly compressed by the holding ring, within a few millimeters of the holding ring ((5) (4) The material removed by the wafer is reduced. However, even this kind of effort is still unsatisfactory because the flattening pressure on the outer periphery of the wafer can only be adjusted indirectly based on the holding ring pressure. The effective distance of the compression effect of the retaining ring cannot be extended to the yen. Any distance from the edge. It is also impossible to independently adjust the holding ring pressure, edge pressure or total backside pressure of the wafer to achieve the desired effect. Another problem with the conventional CMP head using the retaining ring is that the holding ring is suitable for the following table. National Standard (cns) A4^^7^:^ --------Book·-------' f Please read the note on the back and fill in this page again} 1246448 A7 V. Invention Note (5) Any specified point corresponds to the designated portion of the wafer that is clamped to the sub-carrier during the entire (four) light operation. Thus, holding the high or low point on the lower surface of the clothing will also cause the crystal. Round uneven polishing. Although, it can hold the ring The surface is processed to have a high degree of flatness 'but it is not expensive'. Especially because the retaining ring is a consumable, the retaining ring often needs to be replaced as the wafer is polished. The non-uniform sentence for adjusting the material removal to adjust the wafer Deposition 'even if you have worked hard, this compensation method or machine is rarely provided. Non-uniform deposition comes from the circuit structure formed on the wafer or from the characteristics of the deposited layer. For example, the steel layer that has become more common in high-speed integrated circuits Shape: A thicker layer of the center of the wafer than the edge. But it is desirable to have a Weiguang method and device that provides a higher rate of removal from the center of the wafer than at the edge. Scheduled for slurry purity and suspension in slurry The size of the grinding particles in the economy is strictly regulated, so the price of the slurry becomes expensive. In addition, in order to prevent pollution and to provide mechanistic results, the slurry is usually not recycled or recycled, such as property. The major operating cost is the slurry cost of the staff There is still a need for a device and method that provides excellent planar consumerization, control edge planarization, and allows for adjustment of wafer material removal conditions. The compensation for non-uniform deposition of layers on the wafer is required. And the printing method allows the wafer to be vacuum-clamped to the soft back > while reducing or eliminating the crystal paper & degree applicable to the Chinese National Standard (CNS) A4 gauge (210 X 297 public Chu) Finally, the conventional CMP The problem with the device and method is the efficiency and waste of the use of the material. The slurry is typically a chemically active liquid in which the abrasive material is suspended to enhance the rate at which the material is removed from the wafer surface. Since the material = is distributed on the polished surface in front of the head, it is typical to dispense an excess of pulp to ensure that the entire area between the wafer and the polishing surface is covered when the slurry flows through the polishing surface. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, Staff Consumer Cooperatives 1246448 A7 I------ Β7 —_ V. Inventions (6) Stress on the circle. There is a further need for a CMp device that provides a sufficient amount of slurry to the polishing surface without causing excessive waste. [Brief Description of the Invention] In summary, the present invention relates to a CMP system, apparatus and method for polishing and planarizing a substrate to achieve uniformity of height flattening across the substrate surface. The present invention includes numerous systems, devices, structures, and method features associated with chemical mechanical polishing (CMp). In one aspect, the invention provides a chemical mechanical polishing apparatus and method having a polishing surface with a non-uniform recess therein. In another aspect, the present invention provides an integrated mechanical slurry dispensing mechanism to a chemical mechanical polishing head and method. In yet another aspect, the present invention provides a chemical mechanical polishing apparatus and method having a rotating holding ring. In still another aspect, the present invention provides a chemical mechanical polishing apparatus and method having a soft back polishing head. In still another aspect, the present invention provides an apparatus and method for more efficient use of slurry for polishing and planarization. In still another aspect, the present invention provides a workpiece, such as a semiconductor wafer, fabricated by the apparatus or method of the present invention. θ According to another aspect of the invention, a polishing head for positioning a substrate having a surface on a polishing surface of a polishing apparatus is provided for processing a substrate from which material is removed. The polishing head includes a carrier with a flexible member, such as a diaphragm attached to the bottom surface, to which the substrate is held during the polishing operation. The flexure has a receiving surface designed to receive the substrate thereon and a plurality of apertures extending through the flexure. When the substrate is clamped to the receiving surface of the flexure, a cavity or chamber is defined by the lower surface of the carrier, the flexure and the substrate. The cavity design is suitable for the substrate to be straightened to the paper size during the polishing operation. Chinese National Standard (CNS) AO See (210 X 297 mm) 6 91874

1246448 A7 B7 五、發明說明(7 ) 接向拋光面推壓。較佳是當載具包括驅動機構而予以拋光 操作期間旋轉副載具時,孔的大小及數目經選擇而提供撓 經 濟 部 智 慧 財 產 局 員 工 消 費 合 社 印 製 性件承受面與基板間的足夠摩擦力俾對基板賦予旋轉能。 一具體實施例令,副載具下表面也包括一個埠口用以 將加壓流體導入腔穴内,以及一個通道用於分布加壓流體 遍布腔穴。埠口也用來對腔穴抽真空而夹持基板於承受 面’以及當拋光裝置進一步包括真空開關耦合於埠口時用 以偵測基板適合被夾持於承受面上。真空開關係配置呈當 達成預疋真空時由開切換成關或由關轉成開。於本具體實 施例之一種形態,撓性件、基板及埠口設計適合用做為閥, 俾於達成預定真空時用來隔開埠口與腔穴。當對腔穴抽真 空時’撓性件(撓性件的孔藉基板密封)被抽吸向内直到撓 性藉接觸且密封副載具下表面的埠口為止。埠口可有也可 無升高唇來辅助密封。此項設計允許真空度,因而將撓性 件及基板的變形程度控制成對基板造成的應力減至最低。 根據本發明之另一特徵方面,用於拋光基板且於拋光 裝置的拋光面上有一表面拋光頭設置用以處理基板俾去除 基板上的材料。拋光頭包括載具,該載具所載運的副載具 適合於拋光操作期間夹持基板,以及一個固持環係以旋轉 式設置於副載具周圍。固持環有下表面實質上係與夾持於 副載具上的|板表面齊+,固持環下表面於處理期間接觸 撤光面。固持環變形拋光面而降低由基板邊緣去除材料的 速率。使用習知載具,固持環下表面的任何變化或規則將 造成由基板邊緣於不規則附接材料之去除速率局部增高或 5張尺度適用中國國家標準(CNS)A4規彳八----- “ ) 7 Q1X74 請 先 閱 η 背 之 意 事1246448 A7 B7 V. INSTRUCTIONS (7) Push to the polished surface. Preferably, when the carrier includes the driving mechanism and rotates the sub-carrier during the polishing operation, the size and the number of the holes are selected to provide sufficient for the Ministry of Commerce, the Intellectual Property Bureau, the consumer, the printed device, and the substrate. The friction force imparts rotational energy to the substrate. In one embodiment, the lower surface of the sub-carrier also includes a port for introducing pressurized fluid into the cavity and a channel for distributing pressurized fluid throughout the cavity. The mouthpiece is also used to vacuum the cavity to hold the substrate on the receiving surface' and to detect that the substrate is suitable for being clamped to the receiving surface when the polishing apparatus further includes a vacuum switch coupled to the mouthpiece. The vacuum open relationship configuration is switched from on to off or from off to on when the pre-vacuum vacuum is reached. In one embodiment of the present embodiment, the flexure, substrate, and jaw design are suitable for use as a valve to separate the fistula from the cavity when a predetermined vacuum is achieved. When the cavity is evacuated, the flexure (the hole of the flexure is sealed by the substrate) is sucked inward until the flexible contact is made and the mouth of the lower surface of the sub-carrier is sealed. The mouthpiece may or may not have a raised lip to aid in sealing. This design allows for a degree of vacuum, thus controlling the degree of deformation of the flexure and substrate to minimize stress on the substrate. According to another characteristic aspect of the invention, a substrate for polishing a surface and a polishing head on the polishing surface of the polishing apparatus is provided for processing the substrate to remove material on the substrate. The polishing head includes a carrier that carries a sub-carrier suitable for holding the substrate during a polishing operation and a holding ring that is rotatably disposed about the sub-carrier. The lower surface of the retaining ring is substantially flush with the surface of the plate that is clamped to the sub-carrier, and the lower surface of the retaining ring contacts the light-removing surface during processing. The retaining ring deforms the polished surface to reduce the rate at which material is removed from the edge of the substrate. With conventional carriers, any change or rule of the lower surface of the retaining ring will result in a local increase in the removal rate of the irregular attachment material from the edge of the substrate or 5 dimensions applicable to the Chinese National Standard (CNS) A4 Regulations---- - " ) 7 Q1X74 Please read the meaning of η back first

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1 丁 i I I I I 1246448 A71 butyl i I I I I 1246448 A7

降低。但使用本發明載具 轉,因此基板的處理期間 緣去除速率造成的影響可 ,由於固持環可相對於副載具旋 ,固持環下表面對材料由基板邊 減至最低。 -個具體實施例中’副載具係藉驅動機構驅動,固持 環與撖光面Μ的摩擦力造成固持環相對 外’可讓固持環藉粞合至固持環的分開驅動裝置^於: 載具旋轉。 請 先 閱 背 Φ % 事 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 另-具體實施例中,載具進一步包括一個支持環係與 固持環上表面呈面對面關係且藉軸承而與固持環分開。: 持環適合於㈣操作期間施加a力於固持環。轴承例如為 滚珠軸承、流體動力軸承、滾子軸承或錐形軸承。需要時, 固持環進-步包括第,當載具㈣光面被舉高時第丄 唇接合支持環上的第二唇俾耦合固持環至支持環。 根據本發明之另一特徵方面,拋光裝置包括一個定位 基板的拋光頭,其有一表面於裝置拋光面上,用於處理美 板俾由其上去除材料。拋光頭包括載具,載具有個下表^ 適合於拋光操作期間夾持基板。_個具體實施例中,載具 設置有多埠口延伸貫穿底面環繞整個下表面用於操作期間 配漿拋光物質之拋光面上。通常埠口設計適合配漿含磨蝕 材料的料聚至拋光面上。另外,若拋光面包括固定式磨蝕 件於其上,則埠口適合於拋光操作期間配送化學品,例如 水至拋光面上。較妤是埠口為均勻設置環繞固持環與副載 具間的環形空間周邊。 另一具體實施例中,於維持操作期間,埠口進一步 適 項 再 填 寫 本 頁reduce. However, with the use of the carrier of the present invention, the effect of the edge removal rate of the substrate during processing can be minimized because the retaining ring can be rotated relative to the sub-carrier, the surface of the retaining ring facing the material is minimized from the edge of the substrate. In a specific embodiment, the 'sub-carrier is driven by the driving mechanism, and the frictional force between the holding ring and the calendering surface causes the holding ring to be relatively outer' to separate the holding ring from the holding ring to the holding ring. With rotation. Please read the first Φ % 事 智 智 智 智 智 财 财 财 财 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 : Holding the ring is suitable for applying a force to the holding ring during (iv) operation. The bearings are, for example, ball bearings, hydrodynamic bearings, roller bearings or tapered bearings. If desired, the retaining ring advancement includes a second lip-coupled retaining ring on the third lip-engaging support ring to the support ring when the carrier (four) smooth surface is raised. According to another characteristic aspect of the invention, the polishing apparatus includes a polishing head for positioning the substrate having a surface on the polishing surface of the apparatus for processing the sheet metal to remove material therefrom. The polishing head includes a carrier carrying a table below ^ suitable for holding the substrate during the polishing operation. In one embodiment, the carrier is provided with a plurality of slits extending through the bottom surface around the entire lower surface for polishing the polishing surface of the polishing material during operation. Usually the mouth is designed to be suitable for mixing abrasive materials with abrasive materials onto the polishing surface. Alternatively, if the polishing surface includes a stationary abrasive member thereon, the mouthpiece is adapted to dispense chemicals, such as water, to the polishing surface during the polishing operation. The trick is to evenly set the circumference of the annular space between the surrounding retaining ring and the sub-carrier. In another embodiment, during the maintenance operation, the mouthwash is further adapted to fill this page.

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I 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐 91874I This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 public meal 91874)

I 1246448 A7 五、發明說明(9 ) 合沖洗固持環與副載具間的環形空間。本具體實施例中, CMP裝置包括料漿供給來源,可供給料漿至多個槔口,沖 洗流體供給來源其可供給沖洗流體至多個埠口,以及闕用 以介於供給料漿與供給沖洗流體間交換。 另一方面,本發明係針對一種由基板表面去除材料至I 1246448 A7 V. INSTRUCTIONS (9) The annular space between the rinsing retaining ring and the sub-carrier. In this embodiment, the CMP apparatus includes a slurry supply source that supplies slurry to a plurality of ports, a flushing fluid supply source that supplies flushing fluid to the plurality of ports, and a buffer for supplying the slurry to the supply of the flushing fluid Exchange between. In another aspect, the present invention is directed to a material removed from a substrate surface to

意 I 拋光裝置。拋光裝置包括一個適合於拋光操作期間夹持基 板的拋光頭,以及一個拋光面帶有多個凹部用以當基板與 拋光面間有相對運動時配送化學品介於夹持於拋光頭上的 基板與拋光面間。凹部數目於跨拋光面上的間隔距離不均 勻俾提供跨拋光面材料之變化去除速率。跨拋光面之凹部 間隔由第一區變化至第二區而提供第一區與第二區間不同 的去除速率。通常,第一區的每一直性的凹部集令程度比 第二區高時,則第一區具有比第二區更慢的去除速率。一 具體實施例中,凹部數目包括具有非一致尺寸的切槽或抛 光面於徑向方向隔開的間隔。另外,凹部可包括多個開放 空腔或凹坑與搬光面,其大小及集中程度於整個撤光面上 各異。 [圖式之簡單說明] 此等及纟它本發明<肖色及優點結合附圖研讀後文 詳細說明部份將更為彰顯,附圖中: 第1圖為顯示範例多頭抛光或平坦化裝置之簡略圖; 第2圖為顯示根據本發明之一具體實施例之抛光頭之 簡略截面側視圖; ^ $3圖為第2圖拋光頭部份沿第2圖之線3·3所取之平面 々^度過用中國國家標準q 1246448 五、發明說明(10 ) 圖’顯示根據本發明之撓性件之具體實施例; 第4圖為根據本發明之撓性件之另-具體實施例之類 似第3圖的平面圖; 第圖為根據本發明之撓性件之又另一具體實施例之 類似第3圖的平面圖; 第6圖為根據本發明之撓性件之又另一具體實施例之 類似第3圖的平面圖; 第7圖為根據本發明之挽性件之另一具體實施例之類 似第3圖的平面圖; 第8圖根據本發明之一具體實施例第2圖之抛光頭沿 第2圖線8_8所取之剖面圖; 第9圖為顯示根據本發明之一具體實施例於下表面有 切槽之副載具下表面之簡略平面圖; 第10圖為顯示根據本發明之—具體實施例具有旋轉 固持環之拋光頭之部份簡略剖面圖; 第11圖為顯示根據本發明之一具體實施例具有整合 -體配漿機構用以配漿化學品至拋光面上的拋光頭之部份 簡略剖面圖; 第12圖為顯示根據本發明之另一具體實施例之抛光 頭之# 略剖面圖’該抛光頭具有整合―體的配浆機構 用以經由固持環與副載具間的環形空間配聚化學品至拋光 面上; 第13A圖為顯示根據本發明之具體實施例之具有非均 勻間隔切槽之抛光面之簡略平面圖·I I polishing device. The polishing apparatus includes a polishing head adapted to hold the substrate during the polishing operation, and a polishing surface having a plurality of recesses for dispensing the chemical between the substrate and the polishing head when there is relative movement between the substrate and the polishing surface Polished surface. The uneven spacing of the number of recesses across the polishing surface provides a varying rate of removal across the material of the polishing surface. The spacing of the recesses across the polishing surface varies from the first zone to the second zone to provide a different removal rate for the first zone and the second zone. Typically, the first zone has a slower removal rate than the second zone when the extent of each successive recess of the first zone is higher than the second zone. In a specific embodiment, the number of recesses includes slots having non-uniform dimensions or spaced apart by a radial direction. Alternatively, the recess may include a plurality of open cavities or dimples and a dimming surface, the size and concentration of which may vary across the entire evacuation surface. BRIEF DESCRIPTION OF THE DRAWINGS This invention will be more apparent in the following description of the present invention. FIG. 1 is a view showing an example of multi-head polishing or flattening. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a schematic cross-sectional side view showing a polishing head according to an embodiment of the present invention; ^33 is a second portion of the polishing head portion taken along line 3·3 of FIG. Plane 度 ^ 过 过 Chinese National Standard q 1246448 V. Inventive Description (10) Figure 'shows a specific embodiment of a flexure according to the present invention; FIG. 4 is another embodiment of a flexure according to the present invention 3 is a plan view similar to FIG. 3 of another embodiment of the flexure according to the present invention; FIG. 6 is still another embodiment of the flexure according to the present invention. 3 is a plan view similar to FIG. 3; FIG. 7 is a plan view similar to FIG. 3 of another embodiment of the compliant member according to the present invention; FIG. 8 is a polishing view according to a second embodiment of the present invention. The cross-sectional view taken along line 8_8 of Figure 2; Figure 9 shows the basis BRIEF DESCRIPTION OF THE DRAWINGS FIG. 10 is a schematic cross-sectional view showing a lower surface of a sub-carrier having a slit on a lower surface; FIG. 10 is a schematic cross-sectional view showing a polishing head having a rotary holding ring according to an embodiment of the present invention; Figure 11 is a schematic cross-sectional view showing a portion of a polishing head having an integrated-body slurrying mechanism for dispensing chemicals onto a polishing surface according to an embodiment of the present invention; and Figure 12 is a view showing another embodiment according to the present invention; A detailed cross-sectional view of a polishing head of the embodiment. The polishing head has an integrated body-distributing mechanism for aggregating chemicals to the polishing surface via an annular space between the holding ring and the sub-carrier; FIG. 13A is A schematic plan view showing a polished surface having non-uniformly spaced slits in accordance with a specific embodiment of the present invention

請 先 閲 讀 背 之 注 意 事 項J 寫裝 本 頁 訂 經濟部智慧財產局員工消費合作社印製 各纸張尺/JiiS帛+ Θ @家標準(CNS)A4規格(210 X 297公餐了 10 91874 1246448Please read the back of the note first. Item J Write this page Order Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumer Cooperatives. Paper Size / JiiS帛 + Θ @家标准(CNS) A4 Specification (210 X 297 Meals 10 91874 1246448

五、發明說明(u ) 圖 度 圖 度 第別圖為顯示第13A圖之拋光面之簡略部份剖面側 視圖, 第14圖為顯示具有一個非均句間隔螺形切槽之抛光 面之另一具體實施例之簡略平面圖; 第1 5圖為顯示具有多個非均勻間隔螺形切槽之拋光 面之另一具體實施例之簡略平面圖; 曰 第16圖為顯示具有非均勻間隔同心橢圓切槽之拋光 面之另一具體實施例之簡略平面圖; 第17圖為顯示具有非均勻間隔距離平行切槽之縣線 性拋光面具體實施例之簡略平面圖; 第18圖為顯示根據本發明之抛光面之部份簡略剖面 該拋光面有多個均勻間隔距離之切槽但具有非均勻深 第19圖為顯示根據本發明之拋光面之部份簡略剖面 該拋光面有多個均勻間隔距離之切槽但具有非均勻寬 第20圖為顯示根據本發明之一具體實施例有非均勻 間隔腔穴之樾光面之簡略平面圖;以及 第2 1圖為顯示根據本發明之一具體實施例用以拋光 或平坦化基板方法之具體實施例之流程圖。 [元件符號之說明] 100 CMP裝置 105 基板 110 基座 Π5 旋轉平台 120 拋光墊 丨25 拋光面 ^--------^-------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 各紙張又度適用中國國家標準(CNS)A4規格(210 X 297公餐) 11 91874 1246448 A7 B7 經濟部智慧財產局員工消費合作社印製 五、 發明說明(i2 ) 130 橋 135 旋轉架 140 撤光頭 142 單一馬達 145 馬達傳動鏈條 150 頭安裝總成 155 載具 160 副載具 162 凸緣 163 螺絲 164 内部下表面 165 下表面 166 氣密墊 167 内部支持環 168 外部支持環 170 固持環 175 腔穴 176 第二氣密墊 177 下裙裾部 179 螺絲 180 第二密閉腔穴 185 撓性件 190 承受面 195 孔π 200 支持環 205 固持環下表面 210 角環件 215 下腔穴 220 通道 225 埠口 230 唇 235 隔離閥 240 真空開關 243 間隔體 245 上通道 250 陸地 260 軸承 265 内殼體 270 滾珠 275 外座圈 280 内環形空間 285 第一唇 290 第二唇 295 螺栓 300 主轴部 305 頭部 310 表面 320 配漿機構 I I I I I I I I 1 I · 1 I I I 1 I I « — — — — — —I — (請先閱讀背面之沒音?事項再填寫本頁) 本纸張尺度適用中國國家標阜(CNS)A4規格(210 x 297公釐) 12 91874 經濟部智慧財產局員工消費合作社印製 1246448 A7 B7V. DESCRIPTION OF THE INVENTION (u) Figure 1 is a schematic partial cross-sectional side view showing the polished surface of Fig. 13A, and Fig. 14 is a view showing a polished surface having a non-uniform spacing of the spiral grooving BRIEF DESCRIPTION OF THE DRAWINGS FIG. 15 is a schematic plan view showing another embodiment of a polishing surface having a plurality of non-uniformly spaced helical slots; FIG. 16 is a view showing a concentric ellipse having a non-uniform spacing BRIEF DESCRIPTION OF THE DRAWINGS FIG. 17 is a schematic plan view showing a specific embodiment of a linear polishing surface of a county having a non-uniformly spaced distance parallel slit; FIG. 18 is a view showing a polishing surface according to the present invention; a portion of the abbreviated cross section of the polishing surface having a plurality of evenly spaced apart slots but having a non-uniform depth. FIG. 19 is a view showing a portion of the polished surface of the polishing surface according to the present invention having a plurality of evenly spaced apart slits. But having a non-uniform width, FIG. 20 is a schematic plan view showing a illuminating surface having a non-uniformly spaced cavity according to an embodiment of the present invention; and FIG. 2 is a view showing according to the present invention A flow chart of a specific embodiment of a method for polishing or planarizing a substrate. [Description of component symbols] 100 CMP device 105 Substrate 110 Base Π 5 Rotary platform 120 Polishing pad 丨 25 Polished surface ^--------^-------- (Please read the notes on the back first) Fill in this page again) Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Printed the paper and applied the Chinese National Standard (CNS) A4 specification (210 X 297 public) 11 91874 1246448 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing V. INSTRUCTIONS (i2) 130 Bridge 135 Rotating frame 140 Removal head 142 Single motor 145 Motor drive chain 150 Head mounting assembly 155 Carrier 160 Sub-carrier 162 Flange 163 Screw 164 Internal lower surface 165 Lower surface 166 Airtight pad 167 Internal support ring 168 External support ring 170 Retaining ring 175 Cavity 176 Second airtight pad 177 Lower skirt 179 Screw 180 Second closed cavity 185 Flexure 190 Bearing surface 195 Hole π 200 Support ring 205 Hold ring Surface 210 Angle Ring 215 Lower Cavity 220 Channel 225 Port 230 Lip 235 Isolation Valve 240 Vacuum Switch 243 Spacer 245 Upper Channel 250 Land 260 Bearing 265 Inner Housing 270 Ball 275 Outer seat 280 inner annular space 285 first lip 290 second lip 295 bolt 300 spindle portion 305 head 310 surface 320 pulping mechanism IIIIIIII 1 I · 1 III 1 II « — — — — — — I — (please read first The sound on the back is the same as the matter. Please fill in this page. The paper size is applicable to the China National Standard (CNS) A4 specification (210 x 297 mm). 12 91874 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1246448 A7 B7

五、發明說明(13 ) 325 埠口 330 沖洗流體供應源 335 料漿供應源 340 閥 345 切槽 350 腔六 [詳細說明J 本發明提供一種拋光或平坦化基板之改良方法及裝 置。後文說明中陳述多個具體實施例包括特定結構、排列、 材料、形狀等細節。但顯然業界人士 了解無須此等特定細 節即可實施本發明,本發明之方法及裝置非受此限。參照 第1圖,顯示樾光基板105之化學機械之拋光或平坦化(CMp) 裝置100。用於此處「抛光」(polishing)—詞表示撤光或平 坦化(planarization)基板105,包括用於平板顯示器、太陽 能電池,及特別,已經沉積電路元件的半導體基板或晶圓 之基板。半導體晶圓典型為名目直徑1〇〇毫米至3〇〇毫米之 又薄又脆的圓盤。目前100毫米、200毫米及300毫米半導體 晶圓廣為業界使用。本發明方法及裝置1〇〇適用至至少高達 300毫米直徑以及更大型的半導體晶圓及其它基板1〇5。 為求清晰,刪除廣為人知且非關本發明的CMP裝置 100的細節。CMP裝置1〇〇之進一步細節,例如陳述於由本 案申請人於2000年5月12曰所申請之另一美國專利申請 案,名稱為「具有分開固持環及多區晶圓壓力控制之氣動 隔膜CMP頭系統及方法」;以及同樣申請日2〇〇〇年5月12日 所申請之另一發明名稱「有多重壓力區段載荷用以改良邊 緣與環形區段材料去除控制之CMP系統及方法」;以及2〇〇〇 年5月12曰所申請之美國臨時申請案,發明名稱「具有多 I— i --------^--------—Aw (請先閱讀背面之注音?事項再填寫本頁) 本纸張&度適用中國國家標準(CNS)A4規格(210 X 297公釐) 13 91874 1246448 A7 五、發明說明(14 ) 壓力環形區段副載且鉍^ ^ & J戰具材科去除控制之CMP系統及方法 案全體以引用方式併入此處。 訂 # 經濟部智慧財產局員工消費合作社印製 CMP裝置1〇〇包括基座11〇,旋轉時支持大形旋轉平么 旋轉平台上有撤光墊120安裝於其上,抱光塾具有: 先面125’㈣光面上拋光基板1()5。拋光㈣q典型為聚胺 基甲㈣材料’例如得自德拉威州紐華克的洛德爾 (RODEL)。此外,可於拋光面125設置多個凹部(未顯示於 第1圖)例如切槽(gI*_e)或空腔俾配送化學品或料漿介於 拋光面與置於拖光面上的基板1G5表面間。料漿(❿叫一 詞表示帶有磨姓材料懸浮於其中的化學活性液體,料漿用 來提升材料由基板表面去除速率。典型,料漿係與基板ι〇5 上的至少一種材料具有化學活性且具有pH約1 〇至11。例 如’適當料紫係由約12%磨㈣及1%氧化劑於水基劑組 成’且包括具有粒徑約100毫微米之膠體氧化矽或氧化鋁。 視需要時,做為料漿的替代或增添,拋光墊12〇之拋光面125 可有固定式磨蝕材料嵌置於其上,例如得自3M公司。具有 拋光面125帶有固定磨料之CMp裝置1〇〇之具體實施例中, 拋光操作期間配漿於拋光面上的化學品可為水。 基座110也支持橋130,橋130又支持旋轉架135,懸轉 架上有一或多個拋光頭14〇,於拋光操作期間基板1〇5係夾 持於其上。橋130之設計允許旋轉架升降俾允許於拋光操作 期間調整夾持於拋光頭140上的基板105表面接觸拋光面 125。第!圖所示CMP裝置1〇〇之特殊具體實施例為一種多頭 汉计,表示各個旋轉架135有多個抛光頭14〇;但已知單頭 14 91874 經濟部智慧財產局員工消費合作社印製 1246448 A7 ______B7____ 五、發明說明(15 ) CMP裝置100’本發明之抛光頭140、抛光面125及抛光方法 可用於多頭或單頭型拋光裝置100。此外,本特殊CMP設計 中,各個拋光頭140係由單一馬達142驅動,馬達傳動鏈條 145,而鏈條又透過鏈與鏈輪機構(圖中未顯示)傳動各個抛 光頭;但本發明可用於各拋光頭140係以分開馬達旋轉之 例,及/或各拋光頭係藉鏈與鏈輪型傳動以外的方式傳動之 例。除了拋光墊120及拋光頭140之旋轉外,旋轉架13〇可以 拋光平台115的固定中軸為中心循執跡移動而對拋光頭提 供執道運動。此外,本發明之拋光頭140可用於CMP裝置1〇〇 之全部方式’包括如業界眾所周知利用直線運動或往復運 動的機器。 CMP裝置100也結合化學配漿機構(未顯示於第1圖)俾 於拋光操作期間配漿化學品或料漿至拋光面125上,控制料 漿與配漿以及拋光頭140於拋光面上的移動之控制器(未圖 示),以及俾提供多個不同的流道俾介於拋光頭外部固定來 源與抛光頭上或内部之部位連通加壓流體如空氣、水、真 空等之旋轉單元(圖中未顯示)。 效參照第2圖說明根據本發明之撤光頭之具體實 施例。參照第2圖,拋光頭1 4〇包括一個頭安裝總成1 5〇用以 安裝拋光頭至旋轉架135,以及一個載具155用於拋光操作 期間夾持於定位基板105與拋光面125上。載具155典型包括 副載具160,副載具之下表面165其上夹持基板1〇5,以及固 持環1 70係設置於周邊環繞副載具之一部份。 副載具160及固持環170係由載具155懸吊故可以極少 -----------------訂-------- (請先閱讀背面之注意事項再填寫本頁) 衣紙張尺度剌中關家鮮(CNS)A4規格⑵Qx 297公餐) 15 91874 1246448 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(16 ) 摩擦力而未黏合做垂直方向移動。副載具160以及固持環 170與毗鄰元件間設小量機械容差,讓副載具及固持環可以 拋光操作期間配合微小角向變化之方式飄浮於拋光面125 上。參照第2圖,凸緣162係經由螺絲163或其它扣件而附著 於載具155之内部下表面164上。凸緣162係透過撓性件或氣 密墊166而接合至内部支持環167,以及透過外部支持環168 而撓性支持副載具16〇,以及界定一個密閉腔室或腔穴175 於副載具160上方。固持環17〇係介於載具155的副載具16〇 與裙裾物177間延伸的第二撓性件或氣密墊176支持。固持 環170係透過黏著劑(圖中未顯示)或透過螺絲179或其它附 接於氣密墊對側面上背板的扣件而耦合至第二氣密墊 176,如第2圖所示》凸緣162、下裙裾部177、内及外支持 環167、168及第二氣密墊形成第二密閉腔穴〗8〇於固持環 170上方。 於操作中,將副載具160及固持環17〇各自分別向拋光 面125彈壓,同時提供料漿與基板1〇5與拋光面125間的相對 移動俾拋光基板。彈壓力可藉彈簧(圖中未顯示)提供或 藉副載具160或固持環170本身的重量提供。較好是如第2 圖所示,將副載具160及固持環170藉導入分別位於副載且 160及固持環170上方的密閉腔穴或腔室175、18〇内部的: 壓流體而向拋光面125推壓。因為加壓流體施力更均勻且更 方便變更而調整拋光或去除速率,故宜使用加壓流體。通 常施加壓力為約4.5至5.5 pS1,及更典型約5psi。但此等範 圍僅供舉例說明之用,於約2psi至約8psi之任何壓力皆 ^--------1--------- (請先閱讀背面之沒*事項再填寫本頁) 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐) 16 91874 1246448V. INSTRUCTIONS (13) 325 Mouthwash 330 Flushing Fluid Supply Source 335 Slurry Supply Source 340 Valve 345 Groove 350 Cavity Six [Detailed Description of the Invention The present invention provides an improved method and apparatus for polishing or planarizing a substrate. The detailed description set forth below includes specific structures, arrangements, materials, shapes, and the like. It will be apparent to those skilled in the art that the present invention may be practiced without these specific details, and the method and apparatus of the present invention are not limited thereto. Referring to Fig. 1, a chemical mechanical polishing or planarization (CMp) apparatus 100 for a calender substrate 105 is shown. As used herein, "polishing" - means the evacuation or planarization of substrate 105, including substrates for flat panel displays, solar cells, and, in particular, semiconductor substrates or wafers on which circuit components have been deposited. Semiconductor wafers are typically thin, brittle disks of nominal diameters from 1 mm to 3 mm. Currently, 100mm, 200mm and 300mm semiconductor wafers are widely used in the industry. The method and apparatus 1 of the present invention is applicable to semiconductor wafers and other substrates 1 〇 5 having diameters of at least up to 300 mm and larger. For clarity, details of the CMP apparatus 100, which is well known and not related to the present invention, are deleted. Further details of the CMP apparatus are described, for example, in another U.S. patent application filed on May 12, 2000 by the applicant, entitled "Pneumatic diaphragm with separate holding ring and multi-zone wafer pressure control" CMP head system and method"; and another invention title applied for on May 12, 2000, the same application date. CMP system and method for improving edge and ring section material removal control with multiple pressure section loads And the US provisional application filed on May 12, 2002, the title of the invention "has many I-i --------^---------Aw (please Read the phonetic transcription on the back? Please fill out this page.) This paper & applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 13 91874 1246448 A7 V. Description of invention (14) Pressure ring section sub-load The CMP system and method for the removal and control of the 战^ ^ & J warfare materials are incorporated herein by reference. 订# The Ministry of Economic Affairs, the Intellectual Property Bureau, the employee consumption cooperative, the CMP device, including the pedestal 11〇 Supports large-volume rotation when rotating. There is a light-removing pad on the rotating platform. 20 mounted on it, the glare has: First polished 125' (four) polished surface of the substrate 1 () 5. Polished (four) q typical of polyamine (four) material 'for example, from Lodell, Newark, Delaware (RODEL) Further, a plurality of recesses (not shown in Fig. 1) may be provided on the polishing surface 125, such as a grooving (gI*_e) or a cavity 俾 dispensing chemical or slurry between the polishing surface and the dragging The surface of the substrate 1G5. The slurry (the word squeaking refers to a chemically active liquid with a grinding material suspended therein, and the slurry is used to increase the removal rate of the material from the substrate surface. Typically, the slurry system and the substrate are 〇 At least one of the materials on 5 is chemically active and has a pH of from about 1 Torr to about 11. For example, 'appropriate violet is composed of about 12% mill (four) and 1% oxidant in water base' and includes particles having a particle size of about 100 nm. Colloidal cerium oxide or aluminum oxide. If desired, as an alternative or addition to the slurry, the polishing surface 125 of the polishing pad 12 can have a fixed abrasive material embedded thereon, such as from 3M Company. In a specific embodiment of a CMp device with fixed abrasive, polishing operation The chemical that is applied to the polishing surface can be water. The susceptor 110 also supports the bridge 130, which in turn supports the rotating frame 135, and the polishing frame has one or more polishing heads 14 〇 during the polishing operation. The 5 series is clamped thereto. The design of the bridge 130 allows the rotating frame lifting and lowering to allow the surface of the substrate 105 held on the polishing head 140 to contact the polishing surface 125 during the polishing operation. The CMP device shown in Fig. A specific embodiment is a multi-headed Chinese meter, which means that each rotating frame 135 has a plurality of polishing heads 14〇; but a single head is known. 14 91874 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative prints 1246448 A7 ______B7____ V. Invention description (15) CMP Apparatus 100' The polishing head 140, polishing surface 125, and polishing method of the present invention can be used in a multi-head or single-head type polishing apparatus 100. In addition, in this particular CMP design, each polishing head 140 is driven by a single motor 142, the motor drives a chain 145, which in turn transmits the various polishing heads through a chain and sprocket mechanism (not shown); however, the invention can be used for each The polishing head 140 is exemplified by a separate motor rotation, and/or each polishing head is driven by means other than a chain and sprocket type transmission. In addition to the rotation of the polishing pad 120 and the polishing head 140, the rotating frame 13A can perform the orbital movement of the polishing head by centering the fixed center axis of the polishing table 115. Moreover, the polishing head 140 of the present invention can be used in all manner of the CMP apparatus 1' including machines that utilize linear motion or reciprocating motion as is well known in the art. The CMP apparatus 100 also incorporates a chemical pulping mechanism (not shown in Figure 1) to dispense the slurry chemical or slurry onto the polishing surface 125 during the polishing operation, to control the slurry and the slurry and the polishing head 140 on the polishing surface. a moving controller (not shown), and a plurality of different flow passages 旋转 a rotating unit that communicates a pressurized fluid such as air, water, vacuum, etc., between a fixed source external to the polishing head and a portion on or inside the polishing head (Fig. Not shown). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to Figure 2, a specific embodiment of an optical head according to the present invention will be described. Referring to Fig. 2, the polishing head 14 includes a head mounting assembly 15 for mounting the polishing head to the rotating frame 135, and a carrier 155 for clamping on the positioning substrate 105 and the polishing surface 125 during the polishing operation. . The carrier 155 typically includes a sub-carrier 160 on which the lower surface 165 of the sub-carrier holds the substrate 1〇5, and a retaining ring 170 is disposed on a portion of the peripheral surrounding sub-carrier. The sub-carrier 160 and the retaining ring 170 are suspended by the carrier 155, so that it can be rarely-------------------------- (Please read the back Precautions and then fill in this page) Clothing paper size 剌 Zhongguan Jiaxian (CNS) A4 specifications (2) Qx 297 public meals) 15 91874 1246448 Ministry of Economic Affairs Intellectual Property Bureau employees consumption cooperatives printed A7 B7 V. Inventions (16) Friction Unbonded to move in the vertical direction. The sub-carrier 160 and the retaining ring 170 are provided with a small amount of mechanical tolerance between adjacent components to allow the sub-carrier and retaining ring to float on the polishing surface 125 in a manner that allows for a slight angular change during the polishing operation. Referring to Figure 2, the flange 162 is attached to the inner lower surface 164 of the carrier 155 via screws 163 or other fasteners. The flange 162 is joined to the inner support ring 167 by a flexure or airtight gasket 166, and flexibly supports the sub-carrier 16 through the outer support ring 168, and defines a closed chamber or cavity 175 for the sub-load. With 160 above. The retaining ring 17 is supported by a second flexure or airtight pad 176 extending between the sub-carrier 16A of the carrier 155 and the skirt 177. The retaining ring 170 is coupled to the second airtight cushion 176 through an adhesive (not shown) or through a screw 179 or other fastener attached to the back panel on the side of the airtight cushion, as shown in FIG. 2 The flange 162, the lower skirt portion 177, the inner and outer support rings 167, 168 and the second airtight cushion form a second closed cavity 8 above the retaining ring 170. In operation, the sub-carrier 160 and the retaining ring 17 are each biased toward the polishing surface 125, respectively, while providing relative movement between the slurry and the substrate 1〇5 and the polishing surface 125 to polish the substrate. The spring pressure may be provided by a spring (not shown) or by the weight of the sub-carrier 160 or the retaining ring 170 itself. Preferably, as shown in FIG. 2, the sub-carrier 160 and the retaining ring 170 are introduced into the sealed chambers or chambers 175, 18, respectively, above the sub-loads 160 and the retaining ring 170: The polishing surface 125 is pressed. A pressurized fluid is preferred because the pressurized fluid is more uniformly and more easily changed to adjust the polishing or removal rate. Typically, the applied pressure is between about 4.5 and 5.5 pS1, and more typically about 5 psi. However, these ranges are for illustrative purposes only, and any pressure from about 2 psi to about 8 psi is ^--------1--------- (please read the back of the * before you do Fill in this page) This paper size applies to China National Standard (CNS) A4 specification (210 X 297 public) 16 91874 1246448

五、發明說明(17 ) (請先閱讀背面之注意事項再填寫本頁) 調整用以達成預定拖光或平坦化效果。更好是,施加於固 持環170的彈壓力或壓力係大於施加於副載具16〇的彈壓力 或壓力俾略為變形拋光面! 25因而減少所謂的邊緣效應,以 提供跨基板105全表面更為均勻的去除速率與平坦化。邊緣 效應係指於由於抛光面125與基板邊緣的交互作用而產生 於基板105邊緣的去除速率比中部更大之現象之趨勢。經由 向下壓迫且略為變形拋光面125接近基板1〇5邊緣,固持環 170降低將基板邊緣向拋光面推壓的壓力,因而減少局部去 除速率至更為接近跨基板表面其它區的去除速率的程度。 經濟部智慧財產局員工消費合作社印製 根據本發明,副載具160可於底面165包括一個軟性插 件’如撓性件185或膜,軟性插件有個承受面19〇,基板ι〇5 係接納於該面。撓性件185之厚度方向有多個開口或孔口 195延伸貫穿厚度至承受面190俾至少部份施加加壓流體直 接至基板105¾面’而將基板直接向撤光面125加壓。通常, 施加的壓力約為2至8 psi,及更典型約5 psi。較佳,孔口 195之數目及大小係選擇讓基板i 05直接暴露於加壓流體的 面積增至最大的程度,同時提供足夠承受面190面積俾接合 及接觸基板105而於旋轉操作期間提供扭矩或旋轉能由拋 光頭140至基板。本發明之撓性件185之優點包括:⑴經由 縮小粒子將被捕捉的面積而減少或消除被捕捉於承受面 190與基板105間的粒子或雜質對拋光均勻程度造成的影 響;(ii)減少或消除由於基板皺紋而對拋光造成的非均勻 性;以及(iii)減少或消除由於撓性件185之厚度變異造成的 拋光非一致。撓性件185及其中的孔口 195或開口容後詳 本纸張&度適用中國國家標準(CNS)A4規格(210x 297公t ) 17 91874 1246448 A7 五、發明說明(18 ) 述。 ,此外,固持環170可由支持環2〇〇懸吊於載具155上俾 於拋光操作期間可相對於副載具16〇上基板1〇5以不同速度 轉動。支持環200設計適合於拋光操作期間施加壓力至固持 環17〇。提供固持環170以旋轉式環繞基板1〇5設置之優點有 兩點。第一點是由於基板105及固持環17〇係以不同速度轉 動,因此固持環下表面205上並無任何單一點將於拋光操作 期間對應鎖定基板邊緣的單一點。如此,可減少(即使並未 凡全消除)於固持環170下表面2〇5上的高點或低點對基板 邊緣去除速率造成影響,因而防止基板1〇5表面之非平坦拋 光。第二點是由於固持環170下表面2〇5的高點及低點的影 響減至最小,故固持環下表面2〇5無須拋光整修至高度平坦 ’又因而可降低固持環的生產成本。此外,由於固持環1 7 0 是消耗品,隨著基板i 05被拋光而被磨耗,固持環成本降低 將大為減低CMP裝置1〇〇之操作壽命期間的操作成本。旋轉 中的固持環170容後詳述。 4參照第2圖以及第3至7圖說明撓性件1 8 5,顯示承受 面1 9 0以及其中孔口 1 9 5之各個具體實施例。再度參照第2 圖,撓性件1 85典型係由聚合物料製成,該聚合物料不會與 搬光操作使用的基板105及化學品產生反應,例如ePDM、 EPR、矽酮或橡膠,撓性件} 85係被拉伸於副載具之下 表面165上且與下表面165分開一段環形邊緣或角環件 ,俾形成一個下腔穴215,該腔六係由副載具ι6〇下表面 165、角環件210、撓性件185與夹持於撓性件185承受面190 ------------ 裝 (請先閲讀背面之注事項 寫本頁) 訂· 經濟部智慧財產局員工消費合作社印製 本纸張尺度適用中國國家標準(CNS)A4規烙(210 297公釐) 18 91874 1246448 A7 B7 五、發明說明(19 ) 上的基板105之下側所界限。加壓流體經由通道22〇被導引 至下腔穴215,通道22 0係連接於副載具16〇下表面165的槔 口 225。角環件210可由非可壓縮或實質非可壓縮材質製 成,例如金屬、硬質聚合物料等;或為了減少邊緣效應, 角環件係由可壓縮材質或彈性材質如軟塑膠、橡膠、聚石夕 氧等材料製成。 參照第3圖,顯示根據本發明之一具體實施例之撓性 件185承文面190之平面圖。本圖顯示多個孔口 15〇以規則對 稱方式分布於跨承受面190。如前述,孔口 ι95的數目及大 小經選擇而提供承受面19〇與基板105接觸的足夠面積,俾 於拋光操作期間由拋光頭140賦予轉矩或轉能給基板而造 成基板旋轉。發現承受面的表面積其中孔口 195的總面積係 占表面積之約50至約90%,及更佳占表面積之約66至約75 %俾提供足夠接合。較佳具體實施例中,孔口 1 9 5之邊緣相 對於拋光頭140旋轉方向夾角俾加勁撓性件185而增加撓性 件與基板105間的接合因而提供較高轉矩。例如,具有第3 經濟部智慧財產局員X消費合作社印製 圖所示形狀的孔口 19 5於拋光頭係以順時針方向旋轉時可 增加接合。 於撓性件185承受面190之孔口 195之其它設計及圖案 顯示於第4至7圖。 第4圖為略圖顯示撓性件1 85之另一具體實施例之平 面圖,撓性件有較少數較大型孔口 195,其間隔距離更規則 而無夾角緣。第5圖為略圖顯示大量圓形孔195之撓性件185 之另一具體實施例之平面圖。雖然所示具體實施例中,孔 衣纸張尺度適用中國國家標準(CNS)A4規格(21〇χ 297公釐) 19 91874 1246448 A7 B7 五、發明說明(20 ) 口 1 95之直徑皆相等,但須了解孔口的大小及數目與跨承受 面190可改變而未悖離本發明之範圍。第6圖為略圖顯示撓 性件185之另一具體實施例之平面圖,有多個人字形或乂字 形孔口 195設置環繞撓性件185承受面190周邊。再度,雖然 未顯示,但撓性件185可有第二圈孔口 195位在第一圈内部 且與第一圈同心。第二圈的人字形孔口 195可與第一圈朝向 相同方向或反向。但,發現人字形朝向拋光頭140旋轉方向 的反向可增加撓性件185與基板105間的接合因而提供較高 轉矩。撓性件185之又另一具體實施例之平面圖顯示於第7 圖。第7圖中,孔口 195包括二個相當大的開口或孔口。再 度,雖然顯示為圓形,但孔口 195可有任何規則或不規則形 狀包括多角形及橢圓形,各孔口無須具有相同形狀或大 〇 經濟部智慧財產局員工消費合作社印製 參照第8圖,於本發明之另一特徵方面,於副載具1 6〇 下表面埠口 225的升高唇230以及其上帶有晶圓1〇5之撓性 件185適合作為隔離閥235,當埠口 22 5用於將下腔穴抽真空 時隔離閥隔開埠口 225與下腔穴215。於拋光操作期間,當 基板未接觸拋光面125時,於下腔穴215抽真空夾持基板1〇5 至承受面190。例如,抽真空可於拋光操作之前與之後於載 荷與卸載期間進行。先前技藝中,拋光層有軟性插件且使 用真空來夾持基板於拋光頭的問題為插件變形而對基板造 成應力’特別為於基板邊緣尤為如此,於基板邊緣插件由 平坦面變化成凹面性的程度最大,結果可能導致基板的整 個受傷或耗損。依據發生耗損的加工點而定,半導體基板 本纸張尺度適用中國國家標準(CNS)A,4規格(210x 297公釐) 20 91874 1246448 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(21 ) 耗損將損失之多。如此,本發明之優點係經由選用撓性件 185與埠口 225之唇部230分開,於已經達到預定真空時,埠 口可與下腔穴215分開。選擇預定真空提供足夠力來夹持基 板105與承受面190,同時減少撓性件ι85的變形,因而降低 對基板造成的應力。需要時,CMP裝置100進一步包括真空 開關240或換能器(示意顯示於第8圖)耦合至埠口 225,當達 到預定真空時藉切換態或改變態而感應承受面19〇上基板 1 0 5的存在。 如第8圖所示’撓性件的孔口 I%之大小及定位可讓埠 口 225對側的孔口 195A具有直徑小於環繞埠口唇部230的 直徑’孔口邊緣密封埠口至基板丨05。本具體實施例之優點 為允許直接施加真空於基板105,抽真空以及去除基板與承 受面1 90間的任何空氣口袋。另外,於另一具體實施例中(圖 中未顯示),孔口 195的大小及位置可選擇讓撓性件ι85的實 質上未斷裂區位在埠口 2 2 5對側。本具體實施例之優點為可 減少由於孔口 1 95與埠口 225未對準而造成的任何隔離閥 235的故障問題。 於第2圖及第9圖所示之另一具體實施例中,副載具 160之下表面165進一步包括一個間隔體243,間隔體有一或 多切槽或通道245設置於埠口 225與下腔穴215之外部間俾 輔助下腔穴的抽真空;以及拋光操作期間輔助將加壓流體 導入下腔穴内。間隔體243包含一個分開組件藉黏著劑或機 械扣件(圖中未顯示)而定位於或牢固固定於副載具16〇下 表面165上。另外,於第9圖所示,通道245係於副載具160 . I ^ --------^--------- (請先閱讀背面之注意事項再填寫本頁) 本纸張&度適用中國國家標準(CNS)A4規格(210x 297公餐) 21 91874 1246448 A7 五、發明說明(22 ) 下表面165直接加工俾形成間 體2 43。第9圖為顯示根據本 發明之具體實施例之簡略圖,右夕 圖有多個對稱隔開徑向通道245 之副載具160下表面165之平而園 丄 十面圖。本具體實施例進一步精 製例中,撓性件185與升高部的„阳斗、 可阿#的間隔或下表面165上通道245 間的陸地250係選擇於對下腔穴 股八215抽真空時可更進一步減 少撓性件185的變形,因而支掊其 ▲ 叉符基板105,防止基板上的過 度彎曲,且更進一步減少其起 取ν暴板上的應力。確切間隔距離將 依據多項因素決定’包括基杯月^ ^ 悉傲及承欠面19〇的大小或直徑。 發現對直徑約200毫米之丰導妒耸化 〈千等租基板105而言,適當間隔係 小於約100微米。 經濟部智慧財產局員工消費合作社印製 茲參照第2及10圖說明旋轉固持環17〇,第2圖顯示旋 轉固持環的不同具體實施例。再度參照第2圖,固持環17〇 有個上表面225係與支持環200之下表面26〇呈面對面(對稱) 關係,且藉軸承260而與支持環分開。軸承26〇可為滚珠軸 承、〃 μ·體動態軸承、滾子軸承或錐形軸承。第2及丨〇圖所示 具體實%例中’軸承260為滾子軸承,其具有一個内座圈或 内殼體265,多顆滾珠270,以及一個外座圈275形成於固持 環170。此外,内環形空間280設置於固持環ι7〇與副載具16〇 間,因而於拋光操作期間固持環170與副載具16〇可彼此相 對旋轉。 較好是固持環170進一步包括一種耦合機構,當抛光 頭140由拋光面125升高時該機構將耦合至載具15〇。於第2 圖所示具體實施例中,當拋光頭140由拋光面125升高時, 耦合係藉固持環170第一唇285達成,該第一唇係接合支持 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 22 91874 1246448 A7 __B7 五、發明說明(23 y 環200與第二唇290。第1〇圖 弟10圖所不具體實施例中,第一唇285 Ί用多個螺栓295形成’各個螺栓有個主軸部则检於固 、衣或軸承成體265,以及各螺栓有個頭部305有個表面 由主抽σΡ/° 4里向方向向夕卜凸起而於載具155由拋光面 125升高時接合支持環200的第二唇290。較好是至少有3顆 螺栓295均勻隔開於固持環m周邊俾牢賴聯固持環至支 持環200。 如刖文說明,經由減少(即使非消除)固持環1 7〇下表面 2〇5的咼低點影響,旋轉中的固持環提供跨基板ι〇5表面材 料去除速率之均勻度增高以及基板的平坦化增高。固持環 Π〇於拋光操作期間可相對於副載具16〇轉動,其轉動方式 係藉固持ί衣與拋光面i 2 5間的摩擦利因而造成固持環比副 載具160轉動更慢,副載具16〇係藉傳動機構旋轉。另外, 固持裱170可藉耦合其上的第二傳動機構轉動。第二傳動機 構如第ίο圖所示可為分開馬達315,或齒輪或鏈與鏈輪傳動 耦聯至拋光頭傳動機構(圖中未顯示)。仰賴摩擦力轉動固 持環1 7 0之具體實施例之優點為設計簡單而耐久。使用第二 傳動機構之具體實施例之優點為可控制夾持於副載具丨6〇 上的基板105與固持環17〇間之旋轉速度差異,以及可於副 載具方向之反向旋轉固持環。 於本發明之另一特徵方面,具有整合一體之配漿機構 320之撤光頭14〇設置用於拋光操作期間配漿化學品或料漿 至抛光面125上。為了防止污染以及提供一致結果,料漿通 常並未循環利用或回收利用。此外,由於對料漿純度以及 本紙張&度適用中國國家標準(CNS)A4規格(210 X 297公釐)V. INSTRUCTIONS (17) (Please read the notes on the back and then fill out this page) Adjust to achieve the intended drag or flattening effect. More preferably, the spring pressure or pressure applied to the retaining ring 170 is greater than the spring pressure or pressure applied to the sub-carrier 16〇 to slightly deform the polished surface! 25 thus reduces the so-called edge effect to provide a more uniform removal rate and planarization across the entire surface of the substrate 105. The edge effect refers to a tendency that the removal rate of the edge of the substrate 105 is larger than that of the middle portion due to the interaction of the polishing surface 125 with the edge of the substrate. By pressing down and slightly deforming the polishing surface 125 near the edge of the substrate 1〇5, the retaining ring 170 reduces the pressure that pushes the edge of the substrate toward the polishing surface, thereby reducing the local removal rate to a rate of removal closer to other regions across the surface of the substrate. degree. According to the present invention, the sub-carrier 160 may include a flexible insert such as a flexible member 185 or a film on the bottom surface 165. The flexible insert has a receiving surface 19〇, and the substrate ι〇5 is received. On this side. The flexible member 185 has a plurality of openings or apertures 195 extending through the thickness to the receiving surface 190. At least a portion of the pressurized fluid is applied directly to the surface of the substrate 1053, and the substrate is directly pressurized toward the light-removing surface 125. Typically, the applied pressure is about 2 to 8 psi, and more typically about 5 psi. Preferably, the number and size of the apertures 195 are selected to maximize the area of the substrate i 05 directly exposed to the pressurized fluid while providing sufficient area 190 to engage and contact the substrate 105 to provide torque during the rotational operation. Or the rotation can be from the polishing head 140 to the substrate. Advantages of the flexure 185 of the present invention include: (1) reducing or eliminating the effect of particles or impurities trapped between the receiving surface 190 and the substrate 105 on the degree of polishing uniformity by reducing the area at which the particles will be captured; (ii) reducing Or eliminating non-uniformities caused by polishing of the substrate wrinkles; and (iii) reducing or eliminating polishing non-uniformities due to variations in thickness of the flexure 185. The flexure 185 and the opening 195 in the opening or the opening of the paper are suitable for the Chinese National Standard (CNS) A4 specification (210x 297 metric tons) 17 91874 1246448 A7 5. The invention description (18). In addition, the retaining ring 170 can be suspended from the carrier 155 by the support ring 2 俾 and can be rotated at different speeds relative to the sub-carrier 16 基板 upper substrate 1 〇 5 during the polishing operation. The support ring 200 is designed to apply pressure to the retaining ring 17〇 during the polishing operation. There are two advantages to providing the retaining ring 170 in a rotating manner around the substrate 1〇5. The first point is that since the substrate 105 and the retaining ring 17 are rotated at different speeds, there is no single point on the lower surface 205 of the retaining ring that will correspond to a single point of the edge of the substrate during the polishing operation. Thus, the high or low point on the lower surface 2〇5 of the holding ring 170 can be reduced (even if not completely eliminated) to affect the substrate edge removal rate, thereby preventing uneven projection of the surface of the substrate 1〇5. The second point is that since the influence of the high and low points of the lower surface 2〇5 of the retaining ring 170 is minimized, the lower surface 2〇5 of the retaining ring does not need to be polished to a high degree of flatness, and thus the production cost of the retaining ring can be reduced. In addition, since the retaining ring 170 is a consumable, the substrate i 05 is worn away as it is polished, and the cost of the retaining ring is reduced, which greatly reduces the operating cost during the operational life of the CMP device. The holding ring 170 in rotation is described in detail later. 4 The flexible member 185 is illustrated with reference to Fig. 2 and Figs. 3 to 7, showing various embodiments of the receiving surface 1 90 and the aperture 195 therein. Referring again to Figure 2, the flexure 1 85 is typically made of a polymeric material that does not react with the substrate 105 and chemicals used in the light transfer operation, such as ePDM, EPR, fluorenone or rubber, and flexibility. The member 85 is stretched over the sub-carrier lower surface 165 and separated from the lower surface 165 by an annular edge or an angular ring member, and the crucible is formed into a lower cavity 215 which is sub-supported by the sub-carrier ι6. 165, the angle ring member 210, the flexure 185 and the bearing 190 bearing the surface 190 ------------ loading (please read the back of the note to write this page) Ministry of Intellectual Property Bureau employees consumption cooperatives printed paper scale applicable to China National Standard (CNS) A4 regulation (210 297 mm) 18 91874 1246448 A7 B7 V. Invention description (19) on the lower side of the substrate 105 . The pressurized fluid is directed to the lower cavity 215 via the passage 22, and the passage 22 is coupled to the port 225 of the lower surface 165 of the sub-carrier 16. The corner ring member 210 may be made of a non-compressible or substantially non-compressible material, such as a metal, a hard polymer material, etc.; or to reduce edge effects, the corner ring member is made of a compressible material or an elastic material such as soft plastic, rubber, or stone. Made of materials such as oxygen. Referring to Figure 3, there is shown a plan view of a writing surface 190 of a flexure 185 in accordance with an embodiment of the present invention. This figure shows that a plurality of orifices 15〇 are distributed in a regular symmetry manner across the spanning surface 190. As previously described, the number and size of apertures ι 95 are selected to provide a sufficient area for the receiving surface 19 to contact the substrate 105 to impart torque or transfer energy to the substrate during polishing operations to cause substrate rotation. The surface area of the bearing surface is found to have a total area of orifices 195 of from about 50 to about 90% of the surface area, and more preferably from about 66 to about 75% of the surface area to provide sufficient bonding. In a preferred embodiment, the edge of the aperture 195 provides a higher torque by stiffening the flexure 185 relative to the direction of rotation of the polishing head 140 to increase the engagement between the flexure and the substrate 105. For example, an aperture 19 5 having the shape shown in the printed figure of the Intellectual Property Officer X Consumer Cooperative of the Ministry of Economic Affairs can increase the engagement when the polishing head is rotated in a clockwise direction. Other designs and patterns for the aperture 195 of the flexure 185 receiving surface 190 are shown in Figures 4-7. Figure 4 is a plan view showing another embodiment of a flexure 1 85 having a plurality of larger apertures 195 having a more regular spacing without an included rim. Figure 5 is a plan view of another embodiment of a flexure 185 showing a plurality of circular apertures 195 in a schematic view. Although the specific embodiment is shown, the size of the perforated paper is applicable to the Chinese National Standard (CNS) A4 specification (21〇χ297 mm). 19 91874 1246448 A7 B7 5. Inventive Note (20) The diameters of the ports 1 95 are equal. It is to be understood, however, that the size and number of orifices and the cross-bearing surface 190 can be varied without departing from the scope of the invention. Figure 6 is a plan view showing another embodiment of a flexure 185 having a plurality of chevrons or 乂-shaped apertures 195 disposed about the periphery of the receiving surface 190 of the flexure 185. Again, although not shown, the flexure 185 can have a second loop aperture 195 located inside the first loop and concentric with the first loop. The chevron aperture 195 of the second turn may be oriented in the same direction or opposite to the first turn. However, it has been found that the reversal of the chevron toward the direction of rotation of the polishing head 140 increases the engagement between the flexure 185 and the substrate 105 thereby providing higher torque. A plan view of yet another embodiment of the flexure 185 is shown in Figure 7. In Figure 7, aperture 195 includes two relatively large openings or apertures. Again, although shown as a circle, the apertures 195 may have any regular or irregular shape including polygonal and elliptical shapes, and the apertures do not need to have the same shape or large 〇 Ministry of Economic Affairs Intellectual Property Bureau employees consumption cooperatives printed reference 8 In another feature of the present invention, the raised lip 230 of the lower surface port 225 of the sub-carrier 16 and the flexure 185 having the wafer 1〇5 thereon are suitable as the isolation valve 235. The mouthpiece 22 5 is used to separate the mouth 225 from the lower cavity 215 when the lower cavity is evacuated. During the polishing operation, when the substrate does not contact the polishing surface 125, the substrate 1〇5 is vacuumed to the receiving surface 190 in the lower cavity 215. For example, evacuation can be performed during and after the polishing operation during loading and unloading. In the prior art, the problem that the polishing layer has a soft insert and the vacuum is used to clamp the substrate to the polishing head causes the substrate to be deformed to cause stress on the substrate, especially for the edge of the substrate, and the edge of the substrate is changed from a flat surface to a concave surface. The greatest extent, the result may result in the entire injury or wear of the substrate. Depending on the processing point at which the loss occurs, the paper size of the semiconductor substrate is applicable to the Chinese National Standard (CNS) A, 4 specifications (210x 297 mm). 20 91874 1246448 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed A7 B7 V. Invention Note (21) The loss will be much more. Thus, the advantages of the present invention are separated from the lip 230 of the mouthpiece 225 via the optional flexure 185, which can be separated from the lower cavity 215 when a predetermined vacuum has been reached. The predetermined vacuum is selected to provide sufficient force to clamp the substrate 105 and the receiving surface 190 while reducing the deformation of the flexible member ι 85, thereby reducing the stress on the substrate. If desired, the CMP apparatus 100 further includes a vacuum switch 240 or transducer (shown schematically in Figure 8) coupled to the port 225, which senses the receiving surface 19 by the switching state or the changing state when the predetermined vacuum is reached. The existence of 5. As shown in Fig. 8, the aperture I% of the flexure is sized and positioned such that the aperture 195A on the opposite side of the jaw 225 has a diameter smaller than the diameter of the surrounding lip 230. The aperture edge seals the opening to the substrate. 05. An advantage of this embodiment is that it allows direct application of vacuum to the substrate 105, evacuation, and removal of any air pocket between the substrate and the receiving surface 1 90. Additionally, in another embodiment (not shown), the aperture 195 can be sized and positioned such that the substantially unbroken location of the flexure ι 85 is on the opposite side of the mouth 2 25 . An advantage of this embodiment is that it can reduce the problem of failure of any isolation valve 235 due to misalignment of orifice 1 95 with mouth 225. In another embodiment illustrated in Figures 2 and 9, the lower surface 165 of the sub-carrier 160 further includes a spacer 243, the spacer having one or more slots or channels 245 disposed in the mouth 225 and below The outer space of the cavity 215 assists in evacuating the lower cavity; and assists in introducing pressurized fluid into the lower cavity during the polishing operation. The spacer 243 includes a separate component that is positioned or securely attached to the lower surface 165 of the sub-carrier 16 by an adhesive or mechanical fastener (not shown). In addition, as shown in Fig. 9, the channel 245 is attached to the sub-carrier 160. I ^ --------^--------- (Please read the notes on the back and fill in this page. The paper & degree is applicable to the Chinese National Standard (CNS) A4 specification (210x 297 public meals) 21 91874 1246448 A7 V. Inventive Note (22) The lower surface 165 directly processes the crucible to form the inter-body 2 43. Fig. 9 is a schematic view showing a specific embodiment of the present invention, and a right side view of a lower surface 165 of a sub-carrier 160 of a plurality of symmetrically spaced radial passages 245. In a further refinement of the present embodiment, the flexure 185 is selected from the land portion 250 of the raised portion of the "female bucket" or the lower surface 165 of the lower surface 165. The deformation of the flexure 185 can be further reduced, thereby supporting the yoke substrate 105, preventing excessive bending on the substrate, and further reducing the stress on the ν violent plate. The exact separation distance will depend on a number of factors. The decision 'includes the base cup month ^ ^ arrogant and the size or diameter of the undercut surface 19 。. It is found that for a diameter of about 200 mm, the appropriate spacing is less than about 100 microns. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Cooperatives, with reference to Figures 2 and 10, which illustrate the rotating holding ring 17〇, and Figure 2 shows a different embodiment of the rotating holding ring. Referring again to Figure 2, the holding ring 17 has an upper The surface 225 is in a face-to-face (symmetric) relationship with the lower surface 26 of the support ring 200 and is separated from the support ring by a bearing 260. The bearing 26 can be a ball bearing, a · μ body dynamic bearing, a roller bearing or a cone Bearing. 2 and the concrete example shown in the figure, the bearing 260 is a roller bearing having an inner race or inner casing 265, a plurality of balls 270, and an outer race 275 formed on the retaining ring 170. The inner annular space 280 is disposed between the retaining ring ι7〇 and the sub-carrier 16〇, so that the retaining ring 170 and the sub-carrier 16〇 can rotate relative to each other during the polishing operation. Preferably, the retaining ring 170 further includes a coupling mechanism. The mechanism will couple to the carrier 15 when the polishing head 140 is raised by the polishing surface 125. In the particular embodiment illustrated in Figure 2, when the polishing head 140 is raised by the polishing surface 125, the coupling is held by the retaining ring 170 The first lip 285 is achieved, and the first lip bond supports the paper size for the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 22 91874 1246448 A7 __B7 V. Invention Description (23 y ring 200 and second Lip 290. In the non-specific embodiment, the first lip 285 is formed by a plurality of bolts 295. 'The individual bolts have a main shaft portion and are inspected on the solid, clothing or bearing body 265, and the bolts. There is a head 305 with a surface drawn by the main σ Ρ / ° 4 direction And the second lip 290 of the support ring 200 is joined when the carrier 155 is raised by the polishing surface 125. Preferably, at least three bolts 295 are evenly spaced apart from the periphery of the retaining ring m. Support ring 200. As explained in the text, by reducing (even if not eliminating) the effect of the low point of the lower surface 2〇5 of the retaining ring 17 7 , the rotating retaining ring provides uniformity of surface material removal rate across the substrate 〇 5 The increase and the flattening of the substrate are increased. The holding ring can be rotated relative to the sub-carrier 16〇 during the polishing operation, and the rotation mode is caused by the friction between the holding and the polishing surface i 2 5, thereby causing the holding ring to be sub-loaded. The 160 has a slower rotation and the sub-carrier 16 is rotated by the transmission mechanism. Additionally, the retaining jaw 170 can be rotated by a second transmission mechanism coupled thereto. The second transmission mechanism can be a split motor 315 as shown in Fig. ο, or a gear or chain and sprocket drive coupled to the polishing head drive (not shown). The advantage of a particular embodiment that relies on friction to rotate the retaining ring 170 is that the design is simple and durable. An advantage of using a second embodiment of the second transmission mechanism is that the difference in rotational speed between the substrate 105 and the retaining ring 17 that is clamped on the sub-carrier 丨6〇 can be controlled, and the reverse rotation can be maintained in the direction of the sub-carrier. ring. In another feature of the invention, the optical head 14 having an integrated pulping mechanism 320 is provided for slurrying chemicals or slurry onto the polishing surface 125 during the polishing operation. In order to prevent contamination and provide consistent results, the slurry is usually not recycled or recycled. In addition, due to the purity of the slurry and the paper & the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

請 先 閱 讀 背 面 之 注 意 事 項J 再鬌 填 I ^ 頁I 訂 響 經濟部智慧財產局員工消費合作社印製 Q1X74 1246448 A7 ------——^--- 五、發明說明(24 ) 特別對懸孚料漿的磨蝕顆粒大小的嚴格要求,故習知cMp 裝置1〇〇操作的一項顯著成本因素在於料漿成本。習知cMp 裝置100之問題之一為由於料漿係配漿至抛光頭前方的 拋光面125上,故須配漿過量料漿俾確保當料漿流過拋光面 125時將覆蓋基板1〇5與拋光面125間的全體表面。根據本發 明之拋光頭uo包括多個埠口 325其係位在載具155周邊或 環繞基板105的固持環170,因而確保基板與拋光面125間的 王體面積壺被覆盍,且減少或免除料漿的浪費。埠口 3 2 5 的大h及數目經選擇可提供足夠遮蓋力與直徑與接受搬光 的基板105大小有關。此外,埠口 325的大小也選擇成可配 。使用的特定料漿黏度及粒子大小。例如,發現使用具有 黏度1.5厘泊(centipoise)及粒徑i 〇〇毫微米之料漿研磨2〇() 經濟部智慧財產局員工消費合作社印製 毫米基板105時,直徑約3至約!毫米之埠口約2至2〇個即 足。一個具體實施例中,如第u圖所示,料漿係由埠口 325 配漿,埠口係均勻分散於固持環17〇下表面2〇5周圍。另一 具組實%例中,如第12圖所示,埠口 325係設置於固持環17〇 與副載具160的環形空間28〇。較好是,埠口係於固持環17〇 與副載具160間環繞環形空間28〇均勻隔開。更佳是CMp裝 置1〇0進一步包括沖洗流體供應源330、料漿供應源33 5及閥 340用以介於二者間切換,以及埠口 325進一步適合於維修 操作期間沖洗固持環170與副載具丨6〇間的環形空間28〇。 又另一特徵方面,本發明係針對一個拋光面125,該 拋光面有多個凹陷或凹部非一致集中於拋光面上俾控制跨 基板105表面的去除速率。如前述,拋光面125的凹部 本纸張尺度適用中國國家標準(CNS)A4規格(210 297公釐) 24 91874 1246448Please read the notes on the back first. J. Fill in the page. I ^ Page I. The Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumers Co., Ltd. Printed by Q1X74 1246448 A7 ------——^--- V. Inventions (24) Special There is a strict requirement for the abrasive particle size of the suspension slurry, so a significant cost factor for the conventional operation of the cMp device is the slurry cost. One of the problems with the conventional cMp device 100 is that the slurry is dispensed onto the polishing surface 125 in front of the polishing head, so that an excess slurry must be dispensed to ensure that the substrate will cover the substrate as it flows through the polishing surface 125. The entire surface with the polishing surface 125. The polishing head uo according to the present invention includes a plurality of ports 325 that are positioned around the carrier 155 or around the holding ring 170 of the substrate 105, thereby ensuring that the king area between the substrate and the polishing surface 125 is covered and reduced or eliminated. Waste of slurry. The large h and number of the mouthpieces 3 2 5 are selected to provide sufficient hiding power and diameter in relation to the size of the substrate 105 that accepts the light. In addition, the size of the cornice 325 is also selected to be compatible. The specific slurry viscosity and particle size used. For example, it was found to use a slurry with a viscosity of 1.5 centipoise and a particle size of i 〇〇 nanometer to grind 2 〇 () Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed on the millimeter substrate 105, the diameter is about 3 to about! The mouth of the millimeter is about 2 to 2 feet. In one embodiment, as shown in Fig. u, the slurry is slurried by a mouthwash 325, and the mouth is uniformly dispersed around the lower surface 2〇5 of the retaining ring 17. In another example, as shown in Fig. 12, the mouthpiece 325 is disposed in the annular space 28 of the holding ring 17A and the sub-carrier 160. Preferably, the cornice is evenly spaced between the retaining ring 17〇 and the sub-carrier 160 around the annular space 28〇. More preferably, the CMp device 100 further includes a flushing fluid supply 330, a slurry supply 33 5 and a valve 340 for switching therebetween, and the port 325 is further adapted to flush the retaining ring 170 and the secondary during maintenance operations. The carrier has an annular space of 28 inches. In yet another feature, the present invention is directed to a polishing surface 125 having a plurality of depressions or recesses that are non-uniformly concentrated on the polishing surface and that control the removal rate across the surface of the substrate 105. As mentioned above, the concave surface of the polishing surface 125 is applicable to the Chinese National Standard (CNS) A4 specification (210 297 mm) 24 91874 1246448

五、發明說明(25 ) 經濟部智慧財產局員工消費合作社印製 係分散化學品或料漿介於拋光面與置於其上的基板1〇5表 面間。通常’凹部可為多個切槽345或多個凹坑或腔穴350, 其可具有或可未具有相同維度且可或可未跨拋光面125上 均勾隔開。換言之,凹部包含具有跨拋光面徑向間隔非均 句的切槽345或腔穴350或具有非均勻載面積的切槽345或 腔穴350。 參照第1 3 A圖,一具體實施例中,此處拋光面12 5為具 有圓盤形的旋轉面,凹部包括多個同心切槽345,切槽具有 句勻 致的冰度及寬度且非均勻分布跨抛光面。注意,於 第13A圖以及於後文的第14、15、16及17圖,由於切槽345 相對於拋光面1 2 5的寬度小,故切槽顯示為單一實心線。此 等線表示切槽係位在拋光面125上,不得視為傳遞切槽維度 的任何訊息。通常,由於切槽3 4 5之間隔距離較大的區域, 抛光面125接觸基板105的表面積較大,如第13B圖所示, 此區的去除速率大於其它區。如此,如第13 A及1 3B圖之虛 線3 55顯示,定位拋光頭14〇將提供於基板105中心比邊緣更 高的去除速率,邊緣定期移動通過具有較高切槽345集中區 (或切槽間的下表面區)。此點於處理有多層材料,例如銅 層的基材特別合所需,該種基板由於材料的特性以及沉積 · . 過程傾向於呈現凸面形。用於具有如第13A圖所示切槽345 之拋光面125,發現變化切槽,由第一區每一徑向直線付由 約20切槽變化至第二區約1切槽,可提供第一區與第二區間 去除速率差異約5%,第一區提供比第二區更慢的去除速 率 〇 ^9 ^--------訂------- !# (請先閱讀背面之注意事項再填寫本頁) 衣纸張坟度適用中國國家標準(CNS)A4規烙(21〇χ297公釐) 25 91874 1246448 A7 B7 五、發明說明(26 ) 其它具有多個非均勻間隔切槽345之拋光面125之設 計與圖案顯示於第14至17圖。第14圖微略圖顯示有單一非 一致間隔螺形切槽3 4 5之拋光面1 2 5之具體實施例之平面 圖。切槽345係以螺旋或捲繞方式提供接近拋光面125的中 心與邊緣之切槽間較低表面積以及中心與邊緣中間區具有 較面表面積。第15圖為顯示有多個非一致間隔螺形切槽345 之拋光面1 2 5之具體實施例之簡略圖。再度,切槽3 4 5係彼 此隔開且捲繞而提供一區,該區介於接近拋光面125中心與 邊緣的切槽間具有較低表面積,而在介於其間的該區具有 較高表面積。第16圖為顯示具有非均勻間隔同心橢圓切槽 345之拋光面125之具體實施例之簡略平面圖。 第17圖為顯示具有非均勻間隔平行切槽345之線性拋 光面125之具體實施例之簡略平面圖。須注意本具體實施例 中,線性拋光面125可為固定線性面,拋光頭14〇移動於固 定線性面上,或線性拋光面為旋轉帶(圖中未顯示)。 經濟部智慧財產局員工消費合作社印製 第18至20圖顯示抛光面125的其它設計與圖案,其中 凹部間的間隔相對一致,凹部維度變化而提供各區不同的 去除速率。參照第18圖,提供具有多個一致間隔切槽345 且有均勻寬度與非均勻深度之拋光面125之具體實施例之 部份剖面側視圖。本具體實施例中,拋光面125接觸基板ι〇5 的表面積於各區為恆定,經由變更切槽345深度改變調整至 該區的料漿量來控制去除速率的差異。本具體實施例可用 於使用帶有磨蝕材料及料漿之方法,特別可用於料漿的化 學反應性係研磨過程的重要組成之方法。 1246448 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(27 ) 第1 9圖為顯示根據本發明之一具體實施例,有多個一 致間隔切槽但有非均勻寬度之拋光面1 2 5之部份剖面側視 圖。如前述,接觸基板1〇5之表面積變化提供去除速率差 異。第20圖為略圖顯示根據本發明之一具體實施例,具有 一致間隔但非均勻大小之腔穴350之撤光面125之平面圖。 應注意第2 0圖所示腔穴3 5 〇其大小及形狀僅供舉例說明之 用’不可視為傳遞任何有關腔穴維度或形狀的限制,腔穴 形狀可為規則或不規則,腔穴可具有由數分之一亳米至數 毫米範圍維度。再度,接觸基板1〇5之表面積變化將提供去 除速率差異。雖然未顯示,但容易了解去除速率的變化也 可以跨撤光面125間隔距離非均勻的一致大小腔穴35〇達 成’或具有均勻大小開口與變化深度的一致間隔腔穴達 成。 現在參照第21圖根據本發明操作CMP裝置100之方 法。於最初裝載步驟,基板105被接納於撓性件185之承受 面190上(步驟360)。經埠口 225於下腔穴215抽真空(步驟 3 65)至達成預定真空度且埠口被隔開為止(步驟37〇)。視需 要地’經由切換耦合至埠口 225的真空開關240而感測承受 面190上基板1〇5的存在(步驟375)。基板1〇5設置於拋光面 225上(步驟38 0),加壓流體導引入下腔穴21〇而將基板向拋 光面125推壓(步驟385)。化學品如水或料漿配漿至拋光面 125(步驟390)’且透過抛光面上的凹部而分布於基板1〇5與 拋光面間(步驟395)。此等凹部可為間隔距離及/或大小非 均勻的切槽345或腔穴350俾提供如前文說明跨拋光面125 (請先閱tt背面之$意事項再填寫本頁) 衷 訂· # 本紙張&度適用中國國家標準(CNS)A4規格(210 X 297公餐) 27 91874 1246448 A7 B7 五、發明說明(28 ) 的變化去除速率。介於拋光面125與基板1〇5間提供相對運 動來拋光基板(步驟400)。需要時,固持環ι7〇相對於副載 具160以及夹持其上的基板1〇5以不同速度轉動俾減少(即 使非消除)固持環170下表面205的高低點對去除速率的影 響(步驟405)。於拋光完成且拋光頭14〇、固持環17〇及拋光 平台Π5的旋轉停止後,於下腔穴215再度抽真空(步驟41〇) 直到達到預定真空度為止(步驟415),基板1〇5由拋光面125 升高(步驟420)。 現在將重覆本發明之一些重要特徵俾進一步強調其 結構' 功能及優點。 本發明係針對一種拋光頭,該拋光頭用以定位有一表 面的基板於拋光裝置的拋光面上。抛光頭包括一個載具, 個由該載具載運的副載具,該副載具適合於拖光操作期 間夹持基板,以及一個固持環以旋轉式環繞副載具設置。 固持環有個下表面大致齊平基板表面且於拋光操作期間接 觸拋光面。固持環可相對於夾持於副載具上的基板轉動俾 防止基板表面之非平坦拋光。 一個具體實施例中,副載具於拋光操作期間可轉動夾 持於其上的基板,固持環可以與夹持副載具上的基板不同 速度轉動。 另一具體實施例中,拋光頭進一步包括支持環係與固 持環上表面呈面對面關係且藉轴承而與固持環隔開。支持 環適合於抛光操作期間施加壓力至固持環。軸承可為滾珠 轴承、流體動態軸承、滾子軸承或錐形軸承。較佳,固持 冬紙狀度適用中_家標準(CNS)A4規格⑵〇x 297 ^) --—— (請先閱讀背面之;i意事項再填寫本頁) -裝 . 經濟部智慧財產局員工消費合作社印製 1246448 A7 五、發明說明( 唇二Li:一個第一唇,當載具由拋光面上升高時第- 施=支夺㈣第二唇俾轉合固持環至支持環。本具體實 請 先 閱 讀 背 之 意 事 項 i策 頁 I w I I I I I I 訂 主轴邻本中’第一唇包括多顆螺检’各個螺拴有一 凸起=一頭部,頭部有表面由主轴部沿徑向方向向外 俾於载具由拋光面上升高時接合支持環的第二辰。 至固=具體實施例中,抛光頭進一步包括傳動機構耗合 、衣於拋光操作期間造成固持環相對於副載且旋 二=:::間的摩擦力可一作期 =發明之拋光頭特別可用於拋光裝置,如CMP。典 U置進一步包括拋光面及料漿配紫機構,其適合:抱 先操作期間配漿料漿至拋光面上。另外,此拖光裝置具有 拋光面’其上設置有固定磨料,以及化學配漿機構其適人 於拋光操作期間配漿化學品至拋光面上。 口 一另-具體實施例中,提供一種使用抱光裝置抛光具有 表面之基板之方法,該拋光裝置具有拋光面以及載具設 置有副載具及固持環設置環繞於副載具周邊且有個下^ 面。該方法包含下列步驟:設置基板於副載具上,讓美板 表面實質上齊平固持環下表面,將基板表面及固持環;表 面加Μ而向拋光面推壓俾撖光基板表面,以及相對於副載 具旋轉固持環俾抑制基板表面之非平坦撤光。該方法進一 步包括於拋光操作期間旋轉夹持於副載具基板上的步驟, 而旋轉固持環之步驟包括以與夹持於副載具上的基板不同 的速度旋轉固持環之步驟。 1__— _ 本紙張尺度適用中國國家標丰(CNS)A4規格(210 X 997公鉍) 一 29 91874 1246448 A7 _B7 五、發明說明(3〇 ) 一個具體實施例中, 以摩擦力施加於固持環旋:4涉及藉抛光面 衣下表面而旋轉固持環之步驟。另 二:光裝置進一步包括傳動基構搞聯至固持環 轉固持環:步驟包括操作傳動機構而轉動固持環之;二 載且方:^光頭包括以旋轉式牢固固定固持環之 制基板Lt: 許固持環相對於副載具轉動,如此抑 之:置T h勻拋光。一個具體實施例中,讓固持環轉動 之裝置可以與夹持於副載具上基板的同速度轉動固持環。 另-具體實施例中,載具進一步包括支持環 係與固持環上表面呈面對面關係俾於拋光操作_施加寺壓衣 力於固持% ’允許ϋ持環相對於基板旋轉的裝 可隔開支持環與固持環。 軸承 又另一具體實施例中,抱光頭進一步包括傳動機構輛 合至固持環俾確保於撤光操作期間固肖環相對於夹持於副 載,上的基板旋轉。因而固持環與滅面間的摩擦力使: 持%可於拋光操作期間相對於副載具旋轉。 本發明亦係有關一種定位有一表面基板於拋光裝置 之拋光面上的拋光頭。該拋光頭包括一種載具,其適合於 樾光操作期間夹持基板。載具有個下表面,撓性件固定至 載具且伸展跨下表面,角環件設置於撓性件與下表面間而 形成撓性件與下表面間的腔六。載具設置有通道其係與下 表面連通用以將加壓流體導引入腔穴内部。撓性件具有承 受面適合與基板接合,俾於拋光操作期間將基板向拋光面 推壓。撓性件具有某種厚度以及多個孔延伸貫穿該厚度至 裝— (請先閱讀背面之注意事項爯填寫本頁) 訂· 經濟部智慧財產局員工消費合作社印製 本纸張Μ義中國國家標準(CNS)A4規格(21G X 297公餐) 30 91874 1246448 A7 五、發明說明(31 ) 承受面用以直接施加壓力給基板。較好是撓性件進一步適 合將基板密封於承受面上俾將腔穴加壓。 一個具體實施例,,載具進-步包括由該載具所載運 的副載具,撓性件係牢固固定於副載具且跨副載具下表面 伸展。 另一具體實施例中,拋光裝置進一步包括傳動機構俾 於拋光操作期間轉動載具,多個孔的數目及大小經選擇而 提供撓性件承受面與基板間的摩擦力俾對基板賦予旋轉 能。 訂 羲 又另一具體實施例中,載具下表面包括一個埠口與通 道連通。該埠口適合於拋光操作期間容納加壓流體至腔穴 内部。本具體實施例之一版本,載具下表面進一步包括至 少一切槽適合分配來自埠口的加壓流體遍布腔穴。於另一 形態,埠口進一步適合對腔六抽真空,撓性件及基板用做 為閥而於到達預定真空時隔開埠口與腔穴。較佳,選擇預 定真空俾於拋光操作之前與之後的裝載與卸載期間夾持基 板於承受面。更佳,拋光裝置進一步包括真空開關耦聯至 經濟部智慧財產局員工消費合作社印製 埠口,選擇預定真空而當基板被夾持於承受面時可切換該 真空開關。 本發明之拋光頭特別可用於拋光裝置,如CMp。典 型,裝置進一步包括拋光面,及料漿配送機構適合於拋光 操作期間配送料漿至拋光面上。另外,裝置具有帶有固定 磨料於其上的拋光面及化學品配漿裝置,其適合於拋光操 作期間配漿化學品至拋光面上。 本紙張&度適用中國國家標準(CNS)A4現格(210 X 297公釐) 31 91874 1246448 A7 - B7 五、發明說明(32 ) 於另一特徵方面,提供一種方法用於使用拋光裝置拋 光具有一面的基板,該拋光裝置具有一個拋光面及一個載 具設置有個下表面’以及-撓性件延伸跨該下表面。挽性 件具有承受面以及某種厚度以及多個孔延伸貫穿該厚度至 承受面。該方法包括定位基板於載具與拋光面間,讓撓性 件與基板接合以及基板表面停靠在拋光面上之步驟,以及 施加壓力於撓性件俾將基板向拋光面推壓,如此拋光基板 表面之步驟。壓力伸展貫穿孔口因而直接施加壓力於基 板。 -個具體實施例中,載具進一步包括角環件係設置於 撓性件與下表面間而形成腔穴,腔穴下表面有個埠口適合 將加壓流體導入腔穴内,施加壓力於撓性件的步驟設計經 由埠口容納加壓流體至腔穴内部。較好是,拋光裝置進一 步包括傳動機構俾於拋光操作期間轉動載具,該方法進一 步包括透過撓性件提供轉矩給基板的步驟。更好是,延伸 貫穿撓性件厚度的多個孔之數目及大小經選擇而提供挽性 經濟部智慧財產局員工消費合作社印製 件承受面與基板間足夠的摩擦力俾於拋光操作期間對基板 提供轉動能。 一個具體實施例令,埠口進一步適合對腔穴抽真空, 該方法進一步包括對腔穴抽真空俾夹持基板於承受面上之 裝載步驟。較佳,抽真空之裝載步驟進一步涉及當達到預 定真空時使用撓性件及基板做為閥而隔開埠口與腔穴。更 妤疋’拋光裝置具有真空開關耦合至埠口,裝載步驟涉及 於達到預定真空時藉切換真空開關而感應基板存在於承受 木紙張又度適用中國國家標準(CNS)A4規格(210 X 297公餐) 32 91874 1246448 A7 B7 五、發明說明(33 ) 面上。該方法進一步包括於拋光操作後於卸載步驟期間對 腔穴抽真空俾於載具由拋光面上升高之前夾持基板於承受 面上。 又另一特徵方面,拋光基板之拋光裝置具有可直接施 加加壓流體至基板俾將基板向拋光面推壓之裝置,以及於 抛光操作期間傳遞旋轉能由載具至基板之裝置。較好是, 直接施加加壓流體至基板之裝置包括撓性件附著於於拋光 操作期間夹持基板的載具下表面。撓性件有個承受面適合 接合基板,具有某種厚度以及多個孔口延長貫穿其厚度至 承受面用以直接施加壓力於基板。更好是由載具傳遞轉動 能給基板的裝置包括撓性件承受面,孔口數目及大小經選 擇可獲得承受面與基板間的足夠摩擦力,俾對基板提供轉 動能。 本發明亦係關於一種用於拋光具有一表面的基板之 抱光頭於拋光裝置之拋光面上,該裝置具有載具適合於拋 光操作期間夾持基板。載具有個下表面,挽性件牢固固定 於載具且延伸貫穿下表面。撓性件有個承受面用以接合基 板。載具設置有個埠口延伸貫穿下表面以抽取,角環件設 置於撓性件與下表面間於琿口附近。繞性件具有某種厚度 以及至少-個孔口延伸貫穿厚度至承受面,該孔口係實質 上對準埠口。撓性件可由第一 示位置移動,撓性件於第一位 置係與崞口附近下表面隔開, - 人6 汉弟一位置其中撓性件接 。槔口周圍下表面,孔口至少部分對準槔口,因此可對埠 口做抽取俾於至少部分抛光操作期間固持基板至承受面V. INSTRUCTIONS INSTRUCTIONS (25) Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperatives Printing Dispersion chemicals or slurries are between the polished surface and the surface of the substrate 1〇5 placed on it. Typically, the recess can be a plurality of slots 345 or a plurality of pockets or cavities 350, which may or may not have the same dimensions and may or may not be spaced apart across the polishing surface 125. In other words, the recess includes a slot 345 or cavity 350 having a radially spaced non-uniform spacing across the polishing surface or a slot 345 or cavity 350 having a non-uniform loading area. Referring to Figure 13A, in a specific embodiment, the polishing surface 125 is a rotating surface having a disk shape, and the concave portion includes a plurality of concentric slits 345 having a uniform ice and width. Evenly distributed across the polished surface. Note that in Fig. 13A and Figs. 14, 15, 16 and 17 which will be described later, since the slit 345 has a small width with respect to the polishing surface 152, the slit is shown as a single solid line. This line indicates that the grooving is on the polished surface 125 and should not be considered as any message that conveys the dimensions of the grooving. Generally, the surface area of the polishing surface 125 contacting the substrate 105 is large due to the large distance between the slits 345, and as shown in Fig. 13B, the removal rate of this region is larger than that of the other regions. Thus, as shown by the dashed line 3 55 of Figures 13A and 13B, the positioning polishing head 14〇 will provide a higher removal rate at the center of the substrate 105 than the edge, and the edge will periodically move through the concentrated region with a higher slot 345 (or cut The lower surface area between the slots). This is particularly desirable for processing substrates having multiple layers of material, such as a copper layer, which tend to exhibit a convex shape due to the nature of the material and the deposition process. For the polishing surface 125 having the slit 345 as shown in Fig. 13A, the change grooving is found, and about 20 slits are changed from each radial straight line of the first zone to about 1 slit of the second zone, and the first The removal rate between the first zone and the second zone is about 5%, and the first zone provides a slower removal rate than the second zone. 〇^9 ^--------Book-------!# (Please Read the precautions on the back and fill out this page. Applicable paper graves are applicable to China National Standard (CNS) A4 (21〇χ297 mm). 25 91874 1246448 A7 B7 V. Inventions (26) Others have multiple The design and pattern of the polishing surface 125 of the evenly spaced slots 345 is shown in Figures 14-17. Fig. 14 is a schematic view showing a plan view of a specific embodiment of a polishing surface 1 2 5 having a single non-uniformly spaced helical slot 354. The grooving 345 provides a relatively shallow surface area between the center and the edge of the edge of the polishing surface 125 in a spiral or wound manner and a relatively surface area between the center and the edge intermediate portion. Fig. 15 is a schematic view showing a specific embodiment of a polishing surface 1 2 5 having a plurality of non-uniformly spaced helical slits 345. Again, the slits 345 are spaced apart from each other and wound to provide a zone having a lower surface area between the slits near the center and edge of the polishing surface 125, and a higher area in between. Surface area. Figure 16 is a simplified plan view showing a particular embodiment of a polishing surface 125 having non-uniformly spaced concentric ellipses 345. Figure 17 is a schematic plan view showing a specific embodiment of a linear polishing surface 125 having non-uniformly spaced parallel slits 345. It should be noted that in this embodiment, the linear polishing surface 125 may be a fixed linear surface, the polishing head 14〇 is moved on a fixed linear surface, or the linear polishing surface is a rotating belt (not shown). Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperatives Figures 18 through 20 show other designs and patterns of the polished surface 125 in which the spacing between the recesses is relatively uniform and the dimensions of the recesses vary to provide different removal rates for each zone. Referring to Fig. 18, a partial cross-sectional side view of a particular embodiment of a polishing surface 125 having a plurality of uniformly spaced slots 345 and having a uniform width and a non-uniform depth is provided. In this embodiment, the surface area of the polishing surface 125 contacting the substrate ι 5 is constant in each zone, and the difference in removal rate is controlled by changing the depth of the slit 345 to adjust the amount of slurry in the zone. This embodiment can be used in a method which uses an abrasive material and a slurry, and is particularly useful as an important component of the chemical reactive polishing process of the slurry. 1246448 A7 B7 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperatives Printing V. Invention Description (27) Figure 19 is a view showing a polishing surface having a plurality of uniformly spaced slots but having a non-uniform width according to an embodiment of the present invention. Partial cross-section of 1 2 5 . As described above, the change in surface area of the contact substrate 1〇5 provides a difference in removal rate. Figure 20 is a plan view showing a plan view of a light-removing surface 125 of a cavity 350 having a uniform spacing but a non-uniform size, in accordance with an embodiment of the present invention. It should be noted that the cavity 3 5 shown in Figure 20 is sized and shaped for illustrative purposes only. 'It cannot be considered to convey any restrictions on the dimensions or shape of the cavity. The cavity shape can be regular or irregular. The cavity can be It has a dimension ranging from a few tenths of a meter to a few millimeters. Again, the change in surface area of the contact substrate 1〇5 will provide a difference in removal rate. Although not shown, it is readily understood that the change in removal rate can also be achieved across a uniform size cavity 35 that is non-uniformly spaced apart from the relief surface 125 or a uniformly spaced cavity having a uniform size opening and varying depth. Referring now to Figure 21, a method of operating CMP apparatus 100 in accordance with the present invention. In the initial loading step, the substrate 105 is received on the bearing surface 190 of the flexure 185 (step 360). A vacuum is applied through the mouth 225 at the lower cavity 215 (step 3 65) until a predetermined degree of vacuum is reached and the mouth is separated (step 37A). The presence of the substrate 1〇5 on the receiving surface 190 is sensed by switching the vacuum switch 240 coupled to the port 225 as needed (step 375). The substrate 1〇5 is disposed on the polishing surface 225 (step 380), and the pressurized fluid is guided into the lower cavity 21 to push the substrate toward the polishing surface 125 (step 385). A chemical such as water or slurry is slurried to the polishing surface 125 (step 390)' and distributed through the recesses on the polishing surface between the substrate 1〇5 and the polishing surface (step 395). These recesses may provide a slit 345 or a cavity 350 that is spaced apart and/or non-uniform in size. The cross-polishing surface 125 is provided as described above (please read the TOP on the back and fill in the page). The paper & degree applies to the Chinese National Standard (CNS) A4 specification (210 X 297 public meals) 27 91874 1246448 A7 B7 V. The change rate of the invention (28). Relative motion is provided between the polishing surface 125 and the substrate 1〇5 to polish the substrate (step 400). If necessary, the holding ring ι7〇 is rotated at different speeds relative to the sub-carrier 160 and the substrate 1〇5 held thereon to reduce, if not eliminate, the effect of the high and low points of the lower surface 205 of the holding ring 170 on the removal rate (steps) 405). After the polishing is completed and the polishing head 14 〇, the holding ring 17 〇 and the polishing table Π 5 are stopped, the vacuum is again applied to the lower cavity 215 (step 41 〇) until the predetermined degree of vacuum is reached (step 415), the substrate 1 〇 5 Raised by the polishing surface 125 (step 420). Some important features of the present invention will now be repeated, further emphasizing its structure's functions and advantages. SUMMARY OF THE INVENTION The present invention is directed to a polishing head for positioning a substrate having a surface on a polishing surface of a polishing apparatus. The polishing head includes a carrier, a sub-carrier carried by the carrier, the sub-carrier being adapted to hold the substrate during the drag operation, and a retaining ring disposed in a rotatable surround sub-carrier. The retaining ring has a lower surface that is substantially flush with the substrate surface and contacts the polishing surface during the polishing operation. The retaining ring is rotatable relative to the substrate held on the sub-carrier to prevent non-flat polishing of the substrate surface. In one embodiment, the sub-carrier can rotate the substrate held thereon during the polishing operation, and the retaining ring can be rotated at a different speed than the substrate on the clamping sub-carrier. In another embodiment, the polishing head further includes a support ring system in face-to-face relationship with the upper surface of the retaining ring and spaced from the retaining ring by a bearing. The support ring is adapted to apply pressure to the retaining ring during the polishing operation. The bearings can be ball bearings, fluid dynamic bearings, roller bearings or tapered bearings. Preferably, the winter paper is suitable for the _ home standard (CNS) A4 specifications (2) 〇 x 297 ^) --- (please read the back; i intend to fill out this page) - installed. Ministry of Economics intellectual property Bureau employee consumption cooperative printing 1246448 A7 V. Invention description (Lip II Li: a first lip, when the carrier is raised by the polishing surface - the second lip is turned to hold the ring to the support ring. In this case, please read the back of the matter. i policy page I w IIIIII book the spindle adjacent to the 'first lip including multiple screw inspections' each screw has a protrusion = a head, the head has a surface by the spindle The radial direction is outwardly slid to the second nip of the support ring when the carrier is raised by the polishing surface. To the solid = in the specific embodiment, the polishing head further comprises a transmission mechanism, and the coating is caused by the holding ring during the polishing operation. The friction between the secondary load and the rotary two =::: can be used for a period of time. The polishing head of the invention can be used in a polishing device, such as CMP. The U-shaped further includes a polishing surface and a slurry with a purple mechanism, which is suitable for: first operation The slurry is supplied to the polishing surface during the period. In addition, the drag device has a polishing surface having a fixed abrasive disposed thereon, and a chemical pulping mechanism adapted to dispense the chemical to the polishing surface during the polishing operation. In a specific embodiment, a polishing apparatus is provided for polishing the surface The method of the substrate, the polishing apparatus has a polishing surface, and the carrier is provided with a sub-carrier and a retaining ring disposed around the sub-carrier and having a lower surface. The method comprises the steps of: setting the substrate on the sub-carrier, The surface of the US plate is substantially flush with the lower surface of the ring, and the surface of the substrate and the holding ring are twisted to push the surface of the calender substrate toward the polishing surface, and the ring is held relative to the sub-carrier to inhibit the surface of the substrate. Flat evacuation. The method further includes the step of rotating the holding on the sub-carrier substrate during the polishing operation, and the step of rotating the holding ring includes the step of rotating the holding ring at a different speed than the substrate clamped on the sub-carrier 1__— _ This paper scale applies to China National Standard (CNS) A4 specification (210 X 997 cm). A 29 91874 1246448 A7 _B7 V. Description of invention (3〇) A specific In the embodiment, the friction is applied to the holding loop: 4 involves the step of rotating the retaining ring by polishing the lower surface of the topcoat. The second: the optical device further includes the transmission base to engage the holding ring to hold the ring: the steps include operation The transmission mechanism rotates the holding ring; the two-loaded side: the optical head includes a substrate Lt that is fixedly held by the rotating fixed holding ring: the holding ring is rotated relative to the sub-carrier, so that: T is uniformly polished. In an embodiment, the means for rotating the retaining ring can rotate the retaining ring at the same speed as the substrate held on the sub-carrier. In another embodiment, the carrier further includes a support ring system in a face-to-face relationship with the upper surface of the retaining ring. In the polishing operation, the application of the temple pressing force to the holding % 'allows the rotation of the holding ring relative to the substrate to separate the support ring from the holding ring. Bearing In yet another embodiment, the optical head further includes a transmission mechanism that is coupled to the retaining ring to ensure rotation of the substrate relative to the substrate held by the sub-load during the light-removal operation. Thus the friction between the retaining ring and the extinguishing surface is such that: % can be rotated relative to the sub-carrier during the polishing operation. The invention is also directed to a polishing head having a surface substrate positioned on a polishing surface of a polishing apparatus. The polishing head includes a carrier adapted to hold the substrate during the calendering operation. The carrier has a lower surface, the flexure is secured to the carrier and extends across the lower surface, and the corner ring member is disposed between the flexure and the lower surface to form a cavity 6 between the flexure and the lower surface. The carrier is provided with a passageway in communication with the lower surface for introducing pressurized fluid into the interior of the cavity. The flexure has a receiving surface adapted to engage the substrate to urge the substrate toward the polishing surface during the polishing operation. The flexure has a certain thickness and a plurality of holes extend through the thickness to the installation—(Please read the back of the precautions 爯 fill out this page) Order · Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Print this paper Μ义 China Standard (CNS) A4 Specification (21G X 297 Metric) 30 91874 1246448 A7 V. INSTRUCTIONS (31) The receiving surface is used to directly apply pressure to the substrate. Preferably, the flexure is further adapted to seal the substrate against the receiving surface and to pressurize the cavity. In one embodiment, the carrier further includes a sub-carrier carried by the carrier, the flexure being securely attached to the sub-carrier and extending across the lower surface of the sub-carrier. In another embodiment, the polishing apparatus further includes a transmission mechanism for rotating the carrier during the polishing operation, the number and size of the plurality of holes being selected to provide a frictional force between the receiving surface of the flexible member and the substrate, and imparting rotational energy to the substrate . In yet another embodiment, the lower surface of the carrier includes a port that communicates with the passage. The mouthpiece is adapted to contain pressurized fluid to the interior of the cavity during the polishing operation. In one version of this embodiment, the lower surface of the carrier further includes at least all of the slots adapted to dispense pressurized fluid from the mouth throughout the cavity. In another form, the cornice is further adapted to evacuate the chamber six, and the flexure and the substrate are used as valves to separate the fistula from the cavity when the predetermined vacuum is reached. Preferably, the predetermined vacuum is selected to clamp the substrate to the receiving surface during loading and unloading before and after the polishing operation. More preferably, the polishing apparatus further comprises a vacuum switch coupled to the Ministry of Economy, the Intellectual Property Office, the employee consumption cooperative, the printing mouth, and the predetermined vacuum is selected to switch the vacuum switch when the substrate is clamped to the receiving surface. The polishing head of the present invention is particularly useful for polishing devices such as CMp. Typically, the apparatus further includes a polishing surface, and the slurry dispensing mechanism is adapted to dispense the slurry onto the polishing surface during the polishing operation. Additionally, the apparatus has a polishing surface with a fixed abrasive thereon and a chemical dispensing device adapted to dispense the chemical to the polishing surface during the polishing operation. This paper & degree applies to China National Standard (CNS) A4 grid (210 X 297 mm) 31 91874 1246448 A7 - B7 V. Inventive Note (32) In another feature, a method is provided for polishing with a polishing device A substrate having a side having a polishing surface and a carrier provided with a lower surface 'and a flexure extending across the lower surface. The tie member has a bearing surface and a thickness and a plurality of holes extend through the thickness to the receiving surface. The method includes the steps of positioning a substrate between the carrier and the polishing surface, engaging the flexible member with the substrate, and stopping the substrate surface on the polishing surface, and applying pressure to the flexible member to push the substrate toward the polishing surface, thus polishing the substrate The steps of the surface. The pressure extends through the orifice and thus directly applies pressure to the substrate. In a specific embodiment, the carrier further comprises a corner ring member disposed between the flexure and the lower surface to form a cavity, the lower surface of the cavity having a mouth adapted to introduce pressurized fluid into the cavity, applying pressure to the blade The step of the feature design accommodates pressurized fluid to the interior of the cavity via the fistula. Preferably, the polishing apparatus further includes the transmission mechanism rotating the carrier during the polishing operation, the method further comprising the step of providing torque to the substrate through the flexure. More preferably, the number and size of the plurality of holes extending through the thickness of the flexure are selected to provide a sufficient degree of friction between the printed surface of the printed member of the Intellectual Property Office and the substrate during the polishing operation. The substrate provides rotational energy. In one embodiment, the cornice is further adapted to evacuate the cavity, the method further comprising the step of loading the substrate onto the receiving surface by vacuuming the cavity. Preferably, the step of loading the vacuum further involves separating the mouth and the cavity using the flexure and the substrate as a valve when a predetermined vacuum is reached. Furthermore, the polishing device has a vacuum switch coupled to the mouth. The loading step involves the use of a switching vacuum switch to sense the presence of the substrate on the wood sheet when the predetermined vacuum is reached. The Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied. Meal) 32 91874 1246448 A7 B7 V. Description of invention (33). The method further includes evacuating the cavity during the unloading step after the polishing operation to clamp the substrate to the receiving surface before the carrier is raised from the polishing surface. In still another feature, the polishing apparatus for polishing a substrate has means for directly applying a pressurized fluid to the substrate, pushing the substrate toward the polishing surface, and means for transferring the rotational energy from the carrier to the substrate during the polishing operation. Preferably, the means for applying the pressurized fluid directly to the substrate comprises the attachment of the flexure to the lower surface of the carrier that holds the substrate during the polishing operation. The flexure has a receiving surface adapted to engage the substrate, having a thickness and a plurality of apertures extending through its thickness to the receiving surface for direct application of pressure to the substrate. More preferably, the means for imparting rotational energy to the substrate by the carrier includes a flexure receiving surface. The number and size of the apertures are selected to provide sufficient friction between the receiving surface and the substrate to provide rotational energy to the substrate. The invention also relates to a polishing head for polishing a substrate having a surface to a polishing surface of a polishing apparatus, the apparatus having a carrier adapted to hold the substrate during a polishing operation. The carrier has a lower surface that is securely attached to the carrier and extends through the lower surface. The flexure has a bearing surface for engaging the substrate. The carrier is provided with a rake extending through the lower surface for extraction, and the corner ring member is disposed between the flexure and the lower surface adjacent the rake. The wrap member has a thickness and at least one of the apertures extends through the thickness to the receiving surface, the aperture being substantially aligned with the chin. The flexure can be moved by the first position, the flexure being spaced apart from the lower surface adjacent the jaw at the first position, and the flexible member is attached to the position of the person. The lower surface around the mouth, the orifice is at least partially aligned with the mouth, so the mouth can be extracted and the substrate can be held to the receiving surface during at least part of the polishing operation.

本纸張中@ θ家標準(CNS)A4祕⑵Q χ 29tT^J@ θ家标准(CNS)A4秘(2)Q χ 29tT^J in this paper

Aw ^ ^---------. (請先閱讀背面之注意事項再填寫本頁) 01 «7/1 1246448 A7 B7 五、發明說明(34 ) 藉此間隔體實質上限制僅施加抽取給部分基板,如此減少 對基板其餘部分造成非期望的應力。較佳撓性件適合密封 基板於承受面上俾允許對腔穴抽真空。 一個具體實施例中,撓性件及基板作為閥俾於達成預 定真空時隔開埠口與腔穴,因而減少撓性件的變形且將夾 持於承受面上的基板的應力減至最低。本具體實施例之一 版本中’間隔體包括某種厚度隔開撓性件與載具下表面, 該厚度係選擇為當對腔穴抽真空時可進一步降低撓性件的 變形’藉此可減少對夹持於承受面上的基板的應力。另一 形態中’拋光裝置進一步包括真空開關耦合至埠口,當達 到預定真空時藉切換真空開關而感測基板洛承受面上的存 在。 另一具體實施例中,拋光裝置進一步包括驅動機構俾 於抛光操作期間轉動載具,孔口的尺寸經選擇可獲得撓性 件承受面與基板間的足夠摩擦力俾對基板提供轉動能。 又另一具體實施例中,多個孔口延伸貫穿撓性件厚度 至承受面。本具體實施例之一形態中,載具進一步包括一 個連通埠口的通道,用以於拋光操作期間將加壓流體導入 腔穴内部;以及多個孔口適合讓加壓流體直接經由多個孔 口施加於基板上俾於拋光操作期間將基板向拋光面推壓。 另一形態中,拋光裝置進一步包括傳動機構俾於拋光操作 期間轉動載具,孔口數目的大小經選擇可提供撓性件之承 受面與基板間足夠的摩擦力俾對基板供給轉動能。 於另一特徵方面,提供一種方法,用以使用拋光裝置 (請先閱讀背面之;i音?事:填寫本頁) 丨裝 經濟部智慧財產局員工消費合作社印製 本紙張又度適用中國國家標準(CNS)A4規格(210 x 297 ) 34 91874 1246448Aw ^ ^---------. (Please read the note on the back and fill out this page) 01 «7/1 1246448 A7 B7 V. Description of invention (34) This spacer is essentially limited to apply only It is extracted to a portion of the substrate, thus reducing undesired stress on the rest of the substrate. Preferably, the flexible member is adapted to seal the substrate on the receiving surface and permit evacuation of the cavity. In one embodiment, the flexure and the substrate act as a valve to separate the jaws from the cavity when a predetermined vacuum is achieved, thereby reducing deformation of the flexure and minimizing stress on the substrate being held on the receiving surface. In one version of this embodiment, the spacer includes a thickness separating the flexure and the lower surface of the carrier, the thickness being selected to further reduce the deformation of the flexure when the cavity is evacuated. Reduce the stress on the substrate held on the receiving surface. In another aspect, the polishing apparatus further includes a vacuum switch coupled to the mouthpiece for sensing the presence of the substrate on the receiving surface by switching the vacuum switch when a predetermined vacuum is reached. In another embodiment, the polishing apparatus further includes a drive mechanism for rotating the carrier during the polishing operation, the aperture being sized to obtain sufficient friction between the flexure receiving surface and the substrate to provide rotational energy to the substrate. In still another embodiment, the plurality of apertures extend through the thickness of the flexure to the receiving surface. In one aspect of the embodiment, the carrier further includes a passage communicating with the jaw for introducing pressurized fluid into the interior of the cavity during the polishing operation; and the plurality of apertures adapted to allow pressurized fluid to pass directly through the plurality of apertures The port is applied to the substrate and the substrate is pressed against the polishing surface during the polishing operation. In another aspect, the polishing apparatus further includes a transmission mechanism for rotating the carrier during the polishing operation, the number of apertures being selected to provide sufficient friction between the receiving surface of the flexure and the substrate to supply rotational energy to the substrate. In another feature, a method is provided for using a polishing device (please read the back; i tone?: fill out this page). The Ministry of Economic Affairs, the Intellectual Property Office, the employee consumption cooperative, prints the paper and applies it to the Chinese country. Standard (CNS) A4 specification (210 x 297) 34 91874 1246448

撤光具有一表面的基板,_光裝£帶有 -個載具適合於拋光操作期間夾持基板。載具有個下表 面,有撓性件固定於其上,以及有個角環件設置於撓性件 與下表面間俾介於撓性件與下表面間形成腔穴。載具下表 面設置有埠口 ’該埠口適合對腔穴抽真空。撓性件有個承 受面適合承受基板。撓性件具有某種厚度以及至少一個孔 口延伸貫穿厚度至承受面。該方法包括承受基板於承受面 之步驟,對腔穴抽真空俾夾持基板於載具之步驟,以及設 置基板表面於拋光面之步驟。較佳對腔穴抽真空之步驟包 括當已經達到預定真空時,冑用撓性件及基板作為閥而隔 開埠口與腔穴。更佳抛光裝置進—步包括真空開關輛合於 阜口方法進一步包括當已經達到預定真空時,藉切換真 空開關而感應基板存在於承受面上之步驟。 本發明亦係關於一種定位有個表面的基板於拋光裝 置拋光面上之拋光頭。拋光頭包括有個底面的載具。底面 包括適合於拋光操作期間夹持基板的下表面。載具設置有 多個蜂口伸展貫穿底面環繞下表面,用以於操作期間配漿 拋光物質於拋光面上。通常埠口設計適合配衆包括磨料的 料漿至拋光面。另外,當拋光面包括固定式磨料時,埠口 適合於拋光操作期間配漿水至拋光面上。 一個具體實施例中,埠口係設置於固持環内部。 另一具體實施例中,載具進一步包括副載具,副載具 有個承受面,於拋光操作期間基板係夾持於該承受面上Y 以及固持環係環繞副載具設置且藉環形空間而與副載具隔 本紙張&度適用中國國家標準(CNS)A4規格(L)10 X 297公釐) 請 先 閱 讀 背 面 之 意 事 填 寫 本 頁 訂 籬 經 濟 部 智· 慧 財 產 局 員 工 消 費 合 社 印 製 Q1874 1246448 A7 ____________Β7^_ 五、發明說明(36 ) 開本具體實施例之一版本令,淳口係設置於固持環與副 載具間的%形空間内部。較佳槔口係環繞固持環與副載具 間的%形空間均勻隔開。更佳有2至3 〇個埠口。最佳埠口進 一步適合於維護操作期間沖洗固持環與副載具間的環 間。 乂工 本發明之拋光頭特別可用於拋光裝置如CMp。典型裝 置進一步包括拋光面,埠口適合於拋光操作期間配漿包括 磨料的料漿至拋光面上。另外,拋光面上有固定式磨料, 璋口適合於撤光操作期間配漿水至抛光面上。 另一方面,提供一種拋光具有一表面之基板之方法, 該方法係使用拋光裝置其有一拋光面及一載具,載具有個 底面適合於拋光操作期間夾持基板。該方法包括下列步驟: «又置基板於載具下表面上,將載具向拋光面推壓因而將基 板表面向拋光面推壓,以及經載具底面配漿拋光物質至拋 光面上。 一個具體實施例中,拋光面帶有固定磨料於其上,以 及配装化學品至抛光面之步驟包括配紫水至撤光面上。另 外’化學機械拋光裝置進一步包括料漿供給源其可供給料 漿至多個埠口,以及配漿化學品至拋光面之步驟包括配漿 料漿至拋光面之步驟。本具體實施例之一版本中,拋光裝 置進一步包括沖洗流體供給源,其可供給沖洗流體至多個 埠口’以及一個閥介於料漿供給源與沖洗流體供給源間交 換’該方法包括於基板拋光後進一步沖洗多個槔口之步 驟0 ftt先閱讀背面之注音?事項再填寫本頁) -裝·-------訂---------. 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNSM4規格(21〇χ 297公釐) 36 91874 1246448 經 濟 部 智 慧 財 產 局 員 工 費 合 作 社 印 製 A7 B7 五、發明說明(37 ) 又另一方面,提供設置有一表面之基板於拋光裝置拋 光面上之拋光頭,拋光頭具有配漿裝置用以於拋光操作期 間由拋光頭配漿化學品至拋光面上。 一個具體實施例中,由拋光頭配漿之裝置包括配漿包 括磨料之料漿至拋光面上之裝置。另外,拋光面帶有固定 磨料於其上,由拋光頭配漿化學品之裝置包括於拋光操作 期間配漿水至拋光面之裝置。 另一具體實施例中,由拋光頭配漿化學品之裝置包括 多個埠口設置於固持環内部。較佳載具進一步包括副載 具,副載具有個承受面,於拋光操作期間基板係夾持於承 受面上,以及固持環係以副載具為中心旋轉式設置且藉環 形空間而與副載具隔開。更佳多個埠口係設置於固持環與 副載具間的環形空間内部。 本發明亦係關於一種由基板表面去除材料之拋光裝 置。拋光裝置包括一個拋光頭適合於抛光操作期間夾持基 板,以及一個拋光面有多個凹部俾當基板與拋光面間有相 對運㈣,分佈化學品介於夾持於拋光頭±的基板與搬光 面間。多個凹部於跨拋光面有非均勻的間 *之材料變化速率為可變數。跨抛光面之凹部之 由第一區變化至第二區而提供第一區與第二區間材料去除 速率的差異。一個具體實施例中,多個凹部包括切槽,切 槽具有跨拋光面徑向方向非一致的間隔距離。本具體實施 例之-形態中,切槽具有非均勻戴面積。較佳跨抛光面之 多個凹部之間隔距離由第一區變化至第二區俾提供第一區 衣纸張&度適用中國國家標準(CNS)A4規格(210 x 297公釐) (請先閱讀背面之4意事項再填寫本頁) ϋ n ϋ n*-rJa ϋ ϋ n n ϋ n 1246448 五、發明說明(38 ) 與第二區間去除速率差異$ ,丨 、至V為5 /〇。更佳多個切槽之集中 清況以第一區比第二區更為隹由 咕 文马集中,第一區提供比第二區更 低的去除速率。跨拋光面之多 叫、夕调切槽之間隔距離由第一區 之每-直料20切槽變化至第二㈣每—直線…切槽。較 :切槽具有實質一致深度以及實質一致寬度。通常第一區 每一直線吋之切槽數目屮筮-E Λ々 比第更多,第一區提供比第二 區更低的去除速率。切槽可為平行切槽、同心圓切槽、同 心橢圓切槽、跨螺旋有變化節距的螺旋切槽或單—螺旋切 槽。 另外凹部可包括多個敞開腔穴或凹坑於拋光面上。 當拋光面有固定磨料固定於其上時,凹部適合於拋光 操作期間配送水介於夹持於拋光頭之基板與拋光面間。另 外凹部適合於抛光操作期間配送含磨料的料漿介於夾持 於拋光頭的基板與拋光面間。 又另一方面’提供一種由基板表面去除材料之拋光裝 置。此拋光裝置包括一個拋光頭其適合於拋光操作期間夾 持基板,以及一個拋光面其有多個凹部俾於基板與拋光面 間有相對運動時配漿化學品介於夹持於拋光頭的基板與拋 光面間。凹部跨抛光面具有非均勻尺寸,尺寸由第一區變 化至第二區俾提供跨拋光面上由第一區至第二區不同的變 化去除速率。 一個具體實施例中,凹部包括多個腔穴於拋光面,多 個腔穴深度由第一區變化至第二區俾提供第一區與第二區 間去除速率差異。The light-removing substrate having a surface, with a carrier, is adapted to hold the substrate during the polishing operation. The carrier has a lower surface to which a flexure is attached, and an angular ring member is disposed between the flexure and the lower surface to form a cavity between the flexure and the lower surface. The lower surface of the vehicle is provided with a mouthwash. The mouthpiece is suitable for vacuuming the cavity. The flexure has a receiving surface to accommodate the substrate. The flexure has a thickness and at least one aperture extends through the thickness to the receiving surface. The method includes the steps of receiving the substrate on the receiving surface, evacuating the cavity, clamping the substrate to the carrier, and setting the surface of the substrate to the polishing surface. Preferably, the step of evacuating the cavity includes separating the opening and the cavity with the flexure and the substrate as a valve when a predetermined vacuum has been reached. Preferably, the polishing apparatus further comprises the step of including the vacuum switch and the mouth opening method further comprising the step of sensing the presence of the substrate on the receiving surface by switching the vacuum switch when the predetermined vacuum has been reached. The invention also relates to a polishing head for positioning a substrate having a surface on a polishing surface of a polishing apparatus. The polishing head includes a carrier having a bottom surface. The bottom surface includes a lower surface adapted to hold the substrate during the polishing operation. The carrier is provided with a plurality of bees extending across the bottom surface around the lower surface for dispensing polishing material onto the polishing surface during operation. Usually the mouthpiece is designed to fit the slurry from the abrasive to the polished surface. Additionally, when the polishing surface comprises a stationary abrasive, the cornice is adapted to dispense slurry to the polishing surface during the polishing operation. In a specific embodiment, the cornice is disposed inside the retaining ring. In another embodiment, the carrier further includes a sub-carrier having a receiving surface, the substrate is clamped on the receiving surface Y during the polishing operation, and the holding ring is disposed around the sub-carrier and borrows from the annular space. Separate the paper from the sub-carriers and apply the Chinese National Standard (CNS) A4 specification (L) 10 X 297 mm) Please read the meaning of the back page and fill in the information on this page. Printed by the company Q1874 1246448 A7 ____________Β7^_ V. Description of the invention (36) In one version of the specific embodiment, the mouthpiece is placed inside the %-shaped space between the holding ring and the sub-carrier. Preferably, the cornice is evenly spaced from the %-shaped space between the retaining ring and the sub-carrier. It is better to have 2 to 3 埠 mouths. The optimum boring is further adapted to flush the ring between the retaining ring and the sub-carrier during maintenance operations. Finishing The polishing head of the present invention is particularly useful for polishing devices such as CMp. The typical apparatus further includes a polishing surface adapted to slurry the slurry comprising the abrasive to the polishing surface during the polishing operation. In addition, there is a fixed abrasive on the polishing surface, and the mouth is suitable for mixing water to the polishing surface during the light-removing operation. In another aspect, a method of polishing a substrate having a surface is provided which utilizes a polishing apparatus having a polishing surface and a carrier having a bottom surface adapted to hold the substrate during the polishing operation. The method comprises the steps of: «Relocating the substrate on the lower surface of the carrier, pushing the carrier against the polishing surface, thereby pushing the surface of the substrate toward the polishing surface, and slurrying the polishing material onto the polishing surface via the bottom surface of the carrier. In one embodiment, the polishing surface is provided with a fixed abrasive thereon, and the step of dispensing the chemical to the polishing surface comprises dispensing purple water onto the evacuation surface. Further, the chemical mechanical polishing apparatus further includes a slurry supply source for supplying the slurry to the plurality of rinsing ports, and the step of dissolving the syrup to the polishing surface comprises the step of dissolving the slurry to the polishing surface. In one version of this embodiment, the polishing apparatus further includes a flushing fluid supply source that supplies flushing fluid to the plurality of ports 'and a valve is exchanged between the slurry supply source and the flushing fluid supply source'. The method includes the substrate Steps to further rinse multiple rinsings after polishing 0 fttRead the phonetic transcription on the back first? Matters to fill out this page) - Packing ------------- Order ---------. Ministry of Economic Affairs Intellectual Property Bureau employees consumption cooperatives printed this paper scale applies to Chinese national standards (CNSM4 specifications (21〇 χ 297 mm) 36 91874 1246448 Ministry of Economic Affairs Intellectual Property Office Staff Cooperative Cooperative Printed A7 B7 V. Invention Description (37) In another aspect, a polishing head provided with a surface of a substrate on a polishing surface of a polishing device, a polishing head A slurry apparatus is provided for dispensing the chemical from the polishing head to the polishing surface during the polishing operation. In one embodiment, the apparatus for slurrying the polishing head includes means for dispensing the slurry comprising the abrasive onto the polishing surface. Additionally, the polishing surface is provided with a fixed abrasive thereon, and the means for dispensing the chemical by the polishing head includes means for dispensing the slurry to the polishing surface during the polishing operation. In another embodiment, the polishing head is formulated with a chemical. The device includes a plurality of ports disposed inside the retaining ring. The preferred carrier further includes a sub-carrier having a receiving surface, the substrate is clamped on the receiving surface during the polishing operation, and the ring system is retained The sub-carrier is centrally disposed and spaced apart from the sub-carrier by an annular space. More preferably, the plurality of openings are disposed inside the annular space between the retaining ring and the sub-carrier. The invention also relates to a surface of the substrate A polishing device for removing material. The polishing device includes a polishing head adapted to hold the substrate during the polishing operation, and a polishing surface having a plurality of recesses. When the substrate and the polishing surface are opposed to each other (4), the distribution chemicals are interposed between the polishing Between the substrate of the head ± and the light-transferring surface, the rate of material change of the plurality of concave portions having a non-uniform interval across the polishing surface is a variable number. The first portion of the concave portion across the polishing surface is changed from the first region to the second region to provide the first The difference between the material removal rate of the zone and the second zone. In one embodiment, the plurality of recesses comprise slots, the slots having non-uniform spacing distances across the radial direction of the polishing surface. In the embodiment - the slot Having a non-uniform wearing area. Preferably, the spacing distance between the plurality of recesses across the polishing surface is changed from the first zone to the second zone, and the first zone paper & degree is applicable to the China National Standard (CNS) A4 specification. 210 x 297 mm) (Please read the 4 on the back and fill out this page) ϋ n ϋ n*-rJa ϋ ϋ nn ϋ n 1246448 V. Description of invention (38) Difference with the removal rate of the second interval $ , 丨To V is 5 /〇. The better concentration of multiple grooving is more concentrated in the first zone than in the second zone. The first zone provides a lower removal rate than the second zone. The spacing between the polishing surface and the eccentric cutting groove is changed from the first region of the first region to the second (four) per-straight line. The grooving has a substantially uniform depth and a substantially uniform width. Usually, the number of slots 屮筮-E 每一 of each straight line in the first zone is more than the first, and the first zone provides a lower removal rate than the second zone. The grooving may be a parallel grooving, a concentric grooving, a concentric elliptical grooving, a helical grooving with varying pitches across the helix, or a single-spiral grooving. In addition, the recess may include a plurality of open cavities or dimples on the polishing surface. When the polishing surface has a fixed abrasive fixed thereto, the recess is adapted to dispense water between the substrate held between the polishing head and the polishing surface during the polishing operation. The outer recess is adapted to dispense the abrasive containing slurry between the substrate held between the polishing head and the polishing surface during the polishing operation. Yet another aspect provides a polishing apparatus that removes material from the surface of the substrate. The polishing apparatus includes a polishing head adapted to hold the substrate during the polishing operation, and a polishing surface having a plurality of recesses for the relative movement between the substrate and the polishing surface, and the slurrying chemical is interposed between the substrate held by the polishing head Between the polished surface. The recess has a non-uniform size across the polishing surface, and the change in size from the first zone to the second zone provides a different rate of change from the first zone to the second zone across the polishing surface. In one embodiment, the recess includes a plurality of cavities on the polishing surface, and the plurality of cavity depths are varied from the first zone to the second zone to provide a difference in removal rates between the first zone and the second zone.

請 先 閱 讀 背 面 之 注 意 事 項JPlease read the back of the note first.

|裝 本 · 頁 I 訂 經濟部智慧財產局員工消費合作社印製 本紙張&度適用中國國家標準(CNS)A4規格(21〇χ 297公餐) 38 91874 1246448 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(39 ) 另一具體實施例中,凹部包括多個腔穴於拋光面,各 個腔穴具有截面積平行拋光面’多個腔穴各別的截面積由 第-區變化至第二區俾提供第一區與第二區間去除速率差 異。 又另具體實施例中’凹部包括多個切槽於拋光面 上,切槽具有某種深度,且多數切槽的深度係由第一區變 化至第二區俾提供第一區與第二區間去除速率差異。 又另一具體實施例中,凹部包括多道切槽於拋光面 上,各切槽有某種寬度,多數切槽各別的寬度由第一區變 化至第二區俾提供第一區與第二區間的差異去除速率。 於另一方面,提供一種方法用以使用拋光裝置由基板 拋光面上去除材料,該拋光裝置具有拋光頭適合於拋光操 作期間夾持基板,以及拋光面有多個凹部俾當基板與拋光 面間有相對運動時配漿化學品介於夾持於拋光頭與拋光面 間的基板。多個凹部具有跨拋光面非均勻的間隔俾提供跨 拋光面之可變材料去除速率。該方法包括下列步驟·定位基 板於拋光頭上,將基板表面向拋光面推壓,配漿化學品至 拋光面,以及提供基板與拋光面間的相對運動俾以跨拋光 面改變的速率而由基板表面去除材料。 一個具體實施例中,跨掀光面的凹部間隔係由第一區 變化至第二區,以及提供基板與拋光面間相對運動俾由基 板表面去除材料的步驟包括提供第一區與第二區間去除速 率差異之步驟。 另一具體實施例中,凹部包括多個切槽,各切槽具有 不A浪&度適用中國國家標準(Cns)A4規格(210 X 297公釐) Q1«7zl I ^--------^-------- ί請先閱讀背面之注意事項再填寫本頁) 1246448 A7 -____ D7_ 五、發明說明(4〇 ) 實質上均勻的深度以及實質均勻的寬度。 又另一具體實施例中,凹部包括多個腔穴,多個腔穴 各自具有實質均勻深度以及平行拋光面之實質均勻截面 積。 又另一具體實施例令,本發明提供一種使用本發明裝 置製造的工作件或基板如半導體晶圓。 又另一具體實施例中,本發明提供一種使用前述根據 本發明之方法或程序之任一者製造的工作件或基板如半導 體晶圓。 而了解即使於前文說明已經列舉本發明之某些具體 實施例之無數特點及優點,連同本發明之多個具體實施例 之結構與功能細節,但本揭示僅為舉例說明之用,就細節 上特別就部件之結構及排列上可於本發明之原理範圍内做 改變,至隨附之申請專利範圍所表達之廣義概括範圍的完 整程度。 ^ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公^ 40 91874|装本· Page I Booked by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumer Cooperatives, Printed Paper & Applicable to China National Standard (CNS) A4 Specification (21〇χ 297 Meals) 38 91874 1246448 Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumption Cooperative Printing A7 V. Inventive Note (39) In another embodiment, the recess comprises a plurality of cavities on the polishing surface, each cavity having a cross-sectional area parallel to the polishing surface 'the plurality of cavities each having a cross-sectional area from the first region The change to the second zone provides a difference in the removal rate between the first zone and the second zone. In another embodiment, the recess includes a plurality of slots on the polishing surface, the slots have a certain depth, and the depth of the plurality of slots is changed from the first region to the second region to provide the first region and the second interval. Remove rate differences. In still another specific embodiment, the concave portion includes a plurality of slits on the polishing surface, each of the slits has a certain width, and the respective widths of the plurality of slits are changed from the first region to the second region, and the first region and the first region are provided. The difference removal rate of the second interval. In another aspect, a method is provided for removing material from a polishing surface of a substrate using a polishing apparatus having a polishing head adapted to hold the substrate during a polishing operation, and having a plurality of recesses on the polishing surface, between the substrate and the polishing surface When there is relative motion, the slurry chemical is interposed between the polishing head and the polishing surface. The plurality of recesses have a non-uniform spacing across the polishing surface to provide a variable material removal rate across the polishing surface. The method comprises the steps of: positioning a substrate on a polishing head, pushing a surface of the substrate toward the polishing surface, dispensing the chemical to the polishing surface, and providing relative motion between the substrate and the polishing surface, at a rate of change across the polishing surface by the substrate Surface removal material. In one embodiment, the recess spacing across the phosphor side varies from the first region to the second region, and provides relative motion between the substrate and the polishing surface. The step of removing material from the substrate surface includes providing a first region and a second interval. The step of removing the rate difference. In another embodiment, the recess comprises a plurality of slots, each slot having a non-A wave & degree applicable to the Chinese National Standard (Cns) A4 specification (210 X 297 mm) Q1 «7zl I ^----- ---^-------- ίPlease read the notes on the back and fill out this page.) 1246448 A7 -____ D7_ V. INSTRUCTIONS (4〇) Substantially uniform depth and substantially uniform width. In still another embodiment, the recess includes a plurality of cavities each having a substantially uniform depth and a substantially uniform cross-sectional area of the parallel polishing surface. In still another embodiment, the present invention provides a workpiece or substrate, such as a semiconductor wafer, fabricated using the apparatus of the present invention. In still another embodiment, the present invention provides a workpiece or substrate, such as a semiconductor wafer, fabricated using any of the foregoing methods or procedures in accordance with the present invention. It is to be understood that the various features and advantages of the specific embodiments of the present invention are set forth in the foregoing description of the embodiments of the invention. In particular, the structure and arrangement of the components can be varied within the scope of the principles of the invention, and the extent of the broad general scope of the scope of the appended claims. ^ Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing This paper scale applies China National Standard (CNS) A4 specification (210 x 297 public ^ 40 91874

Claims (1)

^1246448 第90120699號專利申請案 申請專利範圍修正本 _ (91年7月4曰) -種拋光帛’係用以冑具有一表面的基板定位於拋光 裝置的拋光面上,該拋光裝置具有在拋光操作期間用 以轉動該拋光頭之傳動機構,此拋光頭包含: 一載具,其適合於拋光操作期間夾持基板,此載 具具有一下表面; 一撓性件,其牢固固定於載具且伸展跨該載具之, 下表面,該撓性件具有可接合該基板之承受面以及多 個延伸通過該撓性件至該承受面之厚度的開口; 一間隔體,其設置於撓性件與下表面間以形成腔 穴,該腔穴係藉由該載具之下表面、該間隔體、該撓 性件以及該基板而定義; __2_ 經濟部中央標準局員工福利委員會印製 一通道,其與該下表面連通以將加壓流體導入該 腔穴内部’以便於拋光操作期間將基板向拋光面推壓; 其中’選擇該多個開口之數目及大小俾將該加壓 流體直接施加至該基板;以及 其中,至少該多個開口之其中一個具有邊緣,該 邊緣對著該抛光頭之轉動方向呈有角度者以強化該撓 性件而增加_合至基板的摩擦力。 如申請專利範圍第1項之拋光頭,其中該載具進一步包 含由載具所承載的副載具,以及其中該撓性件係牢固 固定至副載具上且伸展跨副載具之下表面。 本紙張尺度適用中國國豕標準(CNS ) Α4規格(210 X 297公爱) 91874 1246448 H3 如申清專利範圍裳 * 項之抛光頭,其中,選擇該多個開 口之數目及大小以妲Μ + ^ ^ ^ 徒供在該撓性件之承受面以及該基 板之間足夠的麾棟士 *力,而賦予轉動能至該基板。 如申请專利範圍第Ϊ 系1項之拋先頭,其中載具下表面包含 一個埠口與通道連 $ 14,該埠口適合於拋光操作期間接 納加壓流體於腔穴内部。 如申請專利筋(fl楚1 一 I勺人|圍苐4項之拋光頭,其中該載具下表面進 ^ 至^ 通道其適合配送來自埠口的加壓流體 遍佈該腔穴。 如申請專利範圍第4項之拋光頭,其中,該埠口復可對 “腔八抽真工,且其中該撓性件之-部份以及覆蓋並 密封該埠口 ,以於、去以 士 ;達到預定真空時從該腔穴隔開該淳 〇 7·如申請專利範圍第6項之減頭,其中選擇預定真空俾 於拋光操作之别與之後的載荷與卸载操作期間夹持基 板於抛光面。 經濟部中央標準局員工福利委員會印製 .如申請專利範圍第6項之撤光頭,其中該椒光裝置進一 步包括真空開關轉合於璋口,以及其中該預定真空係 選擇於基板夾持於承受面上時可切換真空開關。 9. -種化學機械抛光裝置’其具有如申請專利範圍第工項 之拋光頭,該裝置進一步肖含一個 ^ ^ 5個枓漿配送機構其適 合於拋光操作期間配送料漿至拋光面上。 10. —種化學機械拋光裝置,其亘有如申 /3 〒明專利範圍第ΐ項 _換...光頭丄該拋光裝置進一步包含一你1 S + 本紙張尺度適用中國國準(CNS) 297¾~一~^·^固定磨剩 2 91874 1246448</ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; a transmission mechanism for rotating the polishing head during a polishing operation, the polishing head comprising: a carrier adapted to clamp a substrate during a polishing operation, the carrier having a lower surface; a flexible member secured to the carrier And extending across the lower surface of the carrier, the flexure has a receiving surface engageable with the substrate and a plurality of openings extending through the flexure to the thickness of the receiving surface; a spacer disposed on the flexible Forming a cavity between the piece and the lower surface, the cavity being defined by the lower surface of the carrier, the spacer, the flexure, and the substrate; __2_ Ministry of Economic Affairs Central Bureau of Standards Staff Welfare Committee prints a passage And communicating with the lower surface to introduce pressurized fluid into the interior of the cavity to facilitate pushing the substrate toward the polishing surface during the polishing operation; wherein 'selecting the number and size of the plurality of openings俾The pressurized fluid is applied directly to the substrate; and wherein at least one of the plurality of openings has an edge that is angled toward the direction of rotation of the polishing head to strengthen the flexure to increase Friction. A polishing head according to claim 1, wherein the carrier further comprises a sub-carrier carried by the carrier, and wherein the flexure is firmly fixed to the sub-carrier and extends across the lower surface of the sub-carrier . This paper scale applies to China National Standard (CNS) Α4 specification (210 X 297 public) 91874 1246448 H3 If the application scope of the patent scope is *, the number and size of the multiple openings are selected + ^ ^ ^ Provides sufficient enthalpy force between the receiving surface of the flexure and the substrate to impart rotational energy to the substrate. For example, the first section of the patent application is the first to be thrown, wherein the lower surface of the carrier comprises a mouthpiece and channel connection $14, which is suitable for receiving pressurized fluid inside the cavity during the polishing operation. For example, if you apply for a patented rib (fl Chu 1 I scoop person | 苐 4 item of polishing head, where the lower surface of the carrier is into the ^ channel, it is suitable for dispensing pressurized fluid from the mouth of the cavity throughout the cavity. The polishing head of the fourth item, wherein the mouthpiece is reusable, and the portion of the flexure is covered and sealed, so as to be Separating the crucible from the cavity during vacuum. The diminishing head of claim 6 is selected, wherein the predetermined vacuum is selected to clamp the substrate to the polishing surface during and after the polishing operation and the unloading operation. Printed by the Central Bureau of Standards and Staff Welfare Committee. For example, the optical head of claim 6 of the patent application, wherein the pepper device further comprises a vacuum switch coupled to the mouthpiece, and wherein the predetermined vacuum system is selected to be clamped to the receiving surface of the substrate. The vacuum switch can be switched on. 9. A chemical mechanical polishing device having a polishing head as claimed in the scope of the patent application, the device further comprising a ^ 5 pulp distribution mechanism suitable for polishing operation During the delivery of the slurry to the polishing surface. 10. A chemical mechanical polishing device, such as the application of the third paragraph _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The scale applies to China National Standard (CNS) 2973⁄4~一~^·^ Fixed grinding surplus 2 91874 1246448 於其上的拋光面以及一個化學配漿機構,適合於椒光 操作期間配漿化學品至拋光面上。 11. 一種使用拋光裝置拋光具有一表面之基板之方法,該 拋光裝置具有一拋光頭、一拋光面、一在拋光操作期 間轉動該拋光頭之傳動機構、一載具設置有下表面, 以及撓性件伸展跨該下表面,撓性件具有可接合該基 板之承受面以及多個開口延伸貫穿至該承受面之厚度 的開口,該方法包含下列步驟: 定位該基板於該承受面上以形成藉由該載具之下 表面、該間隔體、該撓性件以及該基板而定義之腔穴; 定位該拋光頭於該拋光面上以便將該基板之表面 依靠在該拋光面上; 透過與該下表面連通之通道將加壓流體導入該腔 穴中以便在拋光操作期間將該基板壓抵該拋光面,該 加壓流體延伸貫穿該等開口以便直接施加至該基板; 以及 經濟部中央標準局員工福利委員會印製 轉動該拋光頭以賦予轉動能至該基板; 其中,至少該多個開口之其中一個具有邊緣,該 邊緣對著該拋光頭之轉動方向呈有角度者以強化該撓 性件而增加耦合至基板的摩擦力。 1 2.如申睛專利範圍第π項之方法,其中該載具進一步包括 間隔體,其係設置於撓性件與載具下表面間俾形成該 腔穴,載具下表面有個埠口,其適合將該加壓流體導 入腔穴内部,以及其中將該加壓流體導入該腔穴中之 本紙張尺度適用中國國家標準(CNS) A4規格(21〇 X 297公麓) 91874 1246448The polishing surface on it and a chemical pulping mechanism are suitable for the mixing of chemicals to the polishing surface during the operation of the pepper. 11. A method of polishing a substrate having a surface using a polishing apparatus, the polishing apparatus having a polishing head, a polishing surface, a transmission mechanism for rotating the polishing head during a polishing operation, a carrier having a lower surface, and a tread The article extends across the lower surface, the flexure has an opening that engages the substrate and an opening through which the plurality of openings extend to the thickness of the receiving surface, the method comprising the steps of: positioning the substrate on the receiving surface to form a cavity defined by the lower surface of the carrier, the spacer, the flexure, and the substrate; positioning the polishing head on the polishing surface to rely on the polishing surface of the substrate; The lower surface communication passage introduces pressurized fluid into the cavity to press the substrate against the polishing surface during a polishing operation, the pressurized fluid extending through the openings for direct application to the substrate; and the central standard of the economic department The employee welfare committee prints and rotates the polishing head to impart rotational energy to the substrate; wherein at least one of the plurality of openings has Edge, the edge opposite the direction of rotation of the polishing head was angled to strengthen those of the flexible member is coupled to the substrate increases the frictional force. 1 2. The method of claim π, wherein the carrier further comprises a spacer disposed between the flexure and the lower surface of the carrier to form the cavity, the carrier having a mouth on the lower surface Suitable for introducing the pressurized fluid into the interior of the cavity, and wherein the paper is introduced into the cavity by the Chinese National Standard (CNS) A4 specification (21〇X 297 cm) 91874 1246448 步驟包含導入該加壓流 發!埠口進入腔穴内部之步 驟。 13·如申請專利範圍第丨2項 ^ 、 乃法,其中該埠口進一步適合 對腔穴抽真空,以及直中 士 &amp; ^ v、 琢方法進一步包含對腔穴抽 工俾夹持基板於承受面 又卸的裝載步驟。 14. 如申請專利範圍第13項 ^ ^ H 、 法,其中該對腔穴抽真空的 裝載步驟進一步包含冬;杳^ 〇 田達到預定真空時,藉由以該撓 性件之一部份覆蓋及密封 ux i旱口而隔開璋口與腔穴。 15. 如申請專利範圍第13項 4力去,其中該拋光裝置進一步 包括一個真空開關耦合至 ^ ^ ^ 旱口,以及其中該裝載步驟 包含當達到預定真空時,娘 ±七&gt; / 、,二由切換真空開關而感測基 板存在於承受面上。 16. 如申請專利範圍第13項之 貝艾万法,其中該方法進一步包含 於拋光操作後,於卸載掉作湘 戟铞作期間,對腔穴抽直空俾於 由拋光面上舉升載具之前夾持基板於承受面。 17 -種用以定位具有在拋光裝置之拋光面上的表面之基板 的拋光頭,該拋光頭包含: 經濟部中央標準局員工福利委員會印製 一載具,其適合於拋光操作期間夾持基板,該載 具有-個下I面且-埠口延伸f穿該了纟s以供應抽 一撓性件,其牢固固定於載具且伸展跨該下表面, 撓性件具有一個承受面用以與基板接合,且至少一個 開口延伸貫穿至該承受面之厚度; _二_間隔體’其設置於撓性件與下j面間以报士菇 本紙張尺度制巾國國家標準(CNS) A4規格(210 X 297公f ^ 〜---^ 4 91874 !246448 H3 由該載具下表面、該間隔體、該撓性件及該基板所定 義之腔穴;以及 其中,該撓性件可由第一位置移動,於第一位置 撓性件係於埠口附近與下表面隔開,以及第二位置其 中該撓性件之一部份接合下表面環繞埠口,以當達到 預定真空時覆蓋及密封該埠口,因此使在該基板上的 非期望應力減至最低。 如申^專利範圍第17項之抛光頭,其中,該間隔體包含 厚度,該厚度經選擇於對腔穴抽真空時可減少撓性件 的變形’因而減少施加於夾持於承受面上的基板的應 力。 19.如申請專利範圍第17項之拋光頭,其中該拋光裝置進 步包括一個真空開關耦合至埠口,以及當已經達到預 定真空時’經由切換真空開關而感測基板於承受面上 的存在。 2〇,如申請專利範圍第17項之拋光頭,其中該拋光裝置進 步包含一傳動機構俾於拋光操作期間轉動載具,以及 其中該至少一個開口的大小經選擇而提供撓性件承嗖 面與基板間的充分摩擦力俾對基板提供轉動能 福 利 委 員 會 印 製 21. 如申請專利範圍第17項之拋光頭,其中多數開口延伸, 穿撓性件厚度至承受面。 22. 如申請專利範圍第21項之拋光頭,其中該載具進一步色 含一條通道與埠口連同,用於拋光操作期間導引加屢 —1體至腔Μ部;以及其中多個開口適合堉Λ严&quot;别 本紙張尺度適用中國國家ϋΝ5) Α4規格(21〇χ 297公幻-加壓^楚 5 91874 1246448The step involves importing the pressurized flow! The step of the fistula entering the inside of the cavity. 13·If the scope of the patent application is 丨2, ^, the method, wherein the mouth is further suitable for vacuuming the cavity, and the straight sergeant &amp; ^ v, 琢 method further comprises clamping the substrate to the cavity The loading step of receiving the surface and unloading. 14. The method of claim 13 wherein the step of loading the cavity further comprises winter; when the field reaches a predetermined vacuum, by partially covering the flexure And seal the ux i dry mouth and separate the mouth and cavity. 15. The method of claim 13 wherein the polishing apparatus further comprises a vacuum switch coupled to the dry mouth, and wherein the loading step comprises when the predetermined vacuum is reached, the mother ± seven &gt; /, Second, the substrate is sensed to exist on the receiving surface by switching the vacuum switch. 16. For example, in the case of the patent Scope No. 13, the method is further included in the polishing operation, and during the unloading of the sputum, the cavity is evacuated and lifted by the polishing surface. Hold the substrate on the receiving surface before. 17 - A polishing head for positioning a substrate having a surface on a polishing surface of a polishing apparatus, the polishing head comprising: a central standard bureau employee welfare committee printed by the Ministry of Economic Affairs, which is suitable for holding a substrate during a polishing operation The load has a lower I face and the 埠 mouth extends through the 纟s to supply a flexible member that is securely fastened to the carrier and extends across the lower surface, the flexure having a receiving surface for Engaged with the substrate, and at least one opening extends through the thickness of the receiving surface; _ _ spacer ′ is disposed between the flexure and the lower j-face to report the national standard (CNS) A4 Specification (210 X 297 metric f ^ 〜---^ 4 91874 !246448 H3 The cavity defined by the lower surface of the carrier, the spacer, the flexure and the substrate; and wherein the flexure is The first position is moved, the flexure is spaced apart from the lower surface adjacent the chin at the first position, and the second position wherein a portion of the flexure engages the lower surface to surround the chin to cover when a predetermined vacuum is reached And sealing the mouth, thus making the base The non-desired stress on the board is minimized. The polishing head of claim 17 wherein the spacer comprises a thickness selected to reduce deformation of the flexure when evacuating the cavity. The reduction of the stress applied to the substrate held by the receiving surface. The polishing head of claim 17, wherein the polishing device advancement comprises a vacuum switch coupled to the mouthpiece and when the predetermined vacuum has been reached The vacuum switch is switched to sense the presence of the substrate on the bearing surface. The polishing head of claim 17, wherein the polishing device advance comprises a transmission mechanism for rotating the carrier during the polishing operation, and wherein the at least The size of one opening is selected to provide sufficient friction between the bearing surface of the flexure and the substrate. The substrate is provided with a rotational energy welfare board. 21. The polishing head of claim 17 of the patent application, wherein most openings extend, wear The thickness of the flexible member to the receiving surface. 22. The polishing head according to claim 21, wherein the carrier further comprises a channel and The mouth is used together for guiding and adding -1 body to the cavity part during the polishing operation; and the plurality of openings are suitable for the sturdy &quot;this paper size applies to the Chinese national ϋΝ5) Α4 specification (21〇χ 297 幻幻- Pressurization ^ Chu 5 91874 1246448 直接經由多個開口施加於基板上,俾於拋光操作期間 將基板向拋光面推壓。 23. 如申請專利範圍第21項之拋光頭,其甲該拋光裝置進一 v包3 —個傳動機構俾於拋光操作期間轉動載具,以 及多個開口之數目及大小經選擇俾提供撓性件承受面 與基板間之充分摩擦力俾對基板提供轉動能。 24. —種使用拋光裝置拋光具有一表面之基板之方法,該拋 光裝置包含一個拋光面以及一個拋光頭其適合於拋光 操作期間夾持基板,該拋光頭具有有下表面之載具、 牢固固定於該載具且延伸跨該下表面之撓性件、以及 没置於撓性件與下表面間之間隔體,該撓性件有個承 叉面其適合承受基板,撓性件具有厚度以及至少一個 孔口延伸貫穿該厚度至承受面,該方法包含下列步驟: 承受基板於承受面上以形成藉由該載具下表面, 該間隔體、該撓性件及該基板所定義之腔穴; 透過在該下表面之埠口對腔穴抽真空俾夾持基板 於載具; 經濟部中央標準局員工福利委員會印製 當已經達到預定真空時,使用以該撓性件之一部 份藉由覆蓋及密封該埠口從而使暴露至該基板之應力 的量減至最小;以及 定位基板表面於拋光面上。 25·如申請專利範圍第24項之方法,其中該拋光裝置進一步 包括一個真空開關耦合至埠口,其中該方法進一步包 ——复達到預定真空時藉切換真空開關感測基板存 本紙張尺度適用中國國家$準(CNS)—A4規格(210 X 297公爱) ~ 6 91874 1246448The substrate is applied directly to the substrate via a plurality of openings to push the substrate toward the polishing surface during the polishing operation. 23. The polishing head according to claim 21, wherein the polishing device enters a v-package 3 - a transmission mechanism rotates the carrier during the polishing operation, and the number and size of the plurality of openings are selected to provide the flexure The sufficient friction between the receiving surface and the substrate provides rotational energy to the substrate. 24. A method of polishing a substrate having a surface using a polishing apparatus, the polishing apparatus comprising a polishing surface and a polishing head adapted to hold a substrate during a polishing operation, the polishing head having a carrier having a lower surface, being firmly fixed a flexure extending over the lower surface of the carrier and a spacer disposed between the flexure and the lower surface, the flexure having a yoke surface adapted to receive the substrate, the flexure having a thickness and At least one aperture extending through the thickness to the receiving surface, the method comprising the steps of: receiving the substrate on the receiving surface to form a cavity defined by the lower surface of the carrier, the spacer, the flexure, and the substrate The substrate is placed on the carrier by vacuuming the cavity at the lower surface of the lower surface; the Central Bureau of Standards Staff Welfare Committee of the Ministry of Economic Affairs prints a part of the flexible part when the predetermined vacuum has been reached. The gap is covered and sealed to minimize the amount of stress exposed to the substrate; and the surface of the substrate is positioned on the polishing surface. The method of claim 24, wherein the polishing apparatus further comprises a vacuum switch coupled to the mouthpiece, wherein the method further comprises: applying a vacuum switch to sense the substrate storage paper size when the predetermined vacuum is reached; China National Standard (CNS) - A4 Specification (210 X 297 public) ~ 6 91874 1246448 在於承受面上之步驟。 26·如申请專利範圍第24項之方法 晶圓。 27. 如申請專利範圍第11項之方法, 晶圓。 28. —種基板,其係經由如申請專 理0 其中該基板包含半導體 其中該基板包含半導體 利範圍第11項之方法處 2 9 · —種半導體晶圓,盆传 八你、、、工由如申請專利範圍第11頊 法處理製造。 、 30· —種基板,其係經由申 wτ %專利範圍第24項之方 之方 法處 經 濟 部 t 央 標 準 員 X 福 利 委 員 會 印 製 31.一種半導體晶圓,其係經由如中請專利範圍第24項之方 法處理製造。 32·一種拋光頭,係用以將具有一表面之基板定位於拋光裝 置之拋光面上之撤光頭,該拋光頭包含一個載具,一 個由該載〃承載的副載具其適合於拋光操作期間夾持 基板’以及一個固持環其係旋轉式以副載具為中心設 置,固持壞有個下表面,該下表面實質上係齊平基板 表面且於拋光操作期間接觸拋光面,固持環可相對於 失持於副載具上的基板轉動俾抑制基板表面的非平坦 拋光。 3 3 ·如申請專利範圍第3 2項之拋光頭,其中該副載具於拋光 操作期間可轉動夾持於其上的基板,以及其中該固持 環可以與夾持於副_載具上的基板不同的速度轉動。 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公爱) 7 91874 1246448 H3 ':請,,含-個支 文符%係與固持環上表面 藉一軸承而盥固牲Ρ 王面對面關係,且 間施加壓力給固::開,支持環適合於抛光操作期 35:二:專利範圍第34項之搬光頭,其中該轴承係選自 組群:、流體動態軸承、輕子轴承及錐形軸承組成的 36. 如包拋光頭’其中該^^^ 4,§載具由樾光面上舉 環至支持環時,該第一唇係接合支持環固持 37. 如申請專利範圍第36項之拋光頭,其中該第;含多 根螺检,各個螺栓有一 孫出士 男主轴及一頊部’頭部之表面 ==/於徑向方向向外凸起,俾於載具由拋光面 +升%頭#表面接合支持環的第二唇。 38·如申請專利範圍第32項之拋光頭,其中一個轉合至固持 壤的傳動機構造成固持環於拋光操作期間相對於副載 具轉動。 39.如申請專利範圍第32項之拋光頭,其中該固持環與搬光 面間的摩擦力造成拋光操作期間固持環相對於副載具 轉動。 40 -種化學機械拋光裝置,其具有如申請專利範圍第則 之拋光頭,該裝置進一步包含一個拋光面以及一種才 工 °__—_ 本紙張尺度適用中011¾準(CNS) A4規格(210 X 297^17 漿配送機構其適合於拋光操作期間配送料漿至拋光3 上0 91874 8 1246448 41之=學機械拋光裝置,其具有如申請專利範圍第32項 該裝置進一步包含拋光面,該撤光面帶有 式磨料於其上’以及-個化學品配漿機構立適合 於拋光操作期間配漿化學品至拋光面上。 42·—種使用拋光裝置拋光具 有表面之基板之方法,該拋 先裝置有—拋光面,該方法包含下列步驟: 疋位基板於拋光表面上讀 所也# &amp; 梁該待拋光基板表面實 質與該拋光面之下表面接觸; 壓迫基板表面背向拋光面; 在圍繞該基板的環形區域中使用固持環以變形該 拋光面’而降低該基板之邊緣的材料之去除速率. /㈣光面及該基板之表面之間提供相對運動以 拋光該基板之表面;以及 相對於該基板之表面對著垂直於該基板之表面的 軸而轉動該固持環,以抑制該基板之表面的非平坦抛 光。 經濟部中央標準局員工福利委員會印製 43. 如申請專利範圍第42項之方法,其中,提供在該撤光面 及該基板之表面間之相對運動的步驟包含於拋光操作 期間轉動夾持於副載具上的基板之步驟,以及1中該 轉動固持環之步驟包含以與夾持於副載具上的基板不X 同的速度轉動固持環之步驟。 44. 如申請專利範圍第42項之方法,其中該轉動固持環之步 驟包含以不同於該基板之方向轉動固持環之步驟、 4 5.如申二目專利範圍第4 2項之方法,並中今掛#梦晉、鱼 本紙張尺度適用中國國家標拋光U進 9 91874 1246448 H3 包=-個傳動機構轉合至固持環,以及其中 46 Π之步驟包含操作傳動機構俾轉動固持環之:驟動固 A如板申請專利範項之方法,其中該基板為^體基 47. —種拋光頭,係 置之拋光面上之抛光頭表面之基板定位於抛光裝 -個由該載1= 樾光裝置包含—個載具, 夾持基板,以及一個二載具及其適合於撤光操作期間 及一個固持環其係環繞副載具之周邊設 2固持環有個下表面其係實質上齊平基板表面且 於=光操作期間接觸拋光面,以及旋轉式牢固固定固 ;載具之裝置俾允許固持環相對於副載具轉動俾 抑制基板的拋光。 如申明專利乾圍第47項之搬光頭,其中該副載具可於抛 光刼作期間轉動夾持於其上的基板,以及其中該轉動 固持%之裝置可以與夾持於副載具上的基板不同的速 度轉動固持環。 49.二申請專利範圍第47項之抛光頭,其中該載具進一步包 個支持環’其係與固持環上表面呈面對面關係俾 於抛光操作期間施加壓力給固持環,以及其中讓固持 衣可相對於基板轉動之裝置包含一個隔開支持環與固 持環之軸承。 )爽上於 5〇·如申凊專利範圍第47項之拋光頭,其進一步包含一個傳 動機構輕合至固持環,該傳動機構致使固持環可於拋 目對於夾持於副載具上的基板轉動。 〕NS ) A4振格(210 X 入巷、 10 91874 1246448It is the step of bearing the face. 26. Method of applying for patent scope item 24 Wafer. 27. The method of applying for the patent scope, item 11, wafer. 28. A substrate, which is processed by, for example, a semiconductor in which the substrate comprises a semiconductor, wherein the substrate comprises a method of semiconductor item 11 of the semiconductor wafer, and the semiconductor wafer is Manufacturing is handled as described in Section 11 of the Patent Application. 30. A kind of substrate, which is printed by the Ministry of Economic Affairs, Department of Economics, and the Standards of the Ministry of Economic Affairs, X. The 24 item method handles manufacturing. 32. A polishing head for removing a substrate having a surface on a polishing surface of a polishing apparatus, the polishing head comprising a carrier, a sub-carrier carried by the carrier, suitable for polishing operation During the clamping of the substrate 'and a retaining ring, the rotating type is disposed centering on the sub-carrier, and the holding surface has a lower surface, the lower surface is substantially flush with the surface of the substrate and contacts the polishing surface during the polishing operation, and the retaining ring can be The non-flat polishing of the substrate surface is suppressed relative to the rotation of the substrate on the sub-carrier. 3. The polishing head of claim 32, wherein the sub-carrier is rotatable to a substrate clamped thereon during a polishing operation, and wherein the retaining ring is engageable with the sub-carrier The substrate rotates at different speeds. This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 public) 7 91874 1246448 H3 ': Please, with - a branch of the letter and the upper surface of the holding ring to smash the animal by a bearing Face-to-face relationship, and pressure is applied to the solid:: open, the support ring is suitable for the polishing operation period 35: 2: Patented item 34 of the moving head, wherein the bearing is selected from the group: fluid dynamic bearing, light bearing And the tapered bearing consists of 36. If the package polishing head 'where ^ ^ ^ 4, § when the carrier is lifted from the calender surface to the support ring, the first lip joint support ring retention 37. The polishing head of item 36, wherein the first part; includes a plurality of screw inspections, each bolt has a sun-stained male main shaft and a crotch portion of the head surface ==/ is convex outward in the radial direction, and is attached to the vehicle The second lip of the support ring is joined by the polished face + liter % head # surface. 38. A polishing head according to claim 32, wherein one of the transmission mechanisms coupled to the retaining soil causes the retaining ring to rotate relative to the sub-carrier during the polishing operation. 39. The polishing head of claim 32, wherein the friction between the retaining ring and the light-transferring surface causes the retaining ring to rotate relative to the sub-carrier during the polishing operation. 40-chemical mechanical polishing device having a polishing head according to the scope of the patent application, the device further comprising a polishing surface and a workmanship_____ This paper size is applicable to the 0113⁄4 standard (CNS) A4 specification (210 X 297^17 pulp distribution mechanism which is suitable for dispensing slurry to a polishing machine during polishing operation to a polishing machine 3, which has a polishing surface as in claim 32, further comprising a polishing surface, the light-removing mechanism The surface-loaded abrasive is applied to the 'and-chemical pulping mechanism for slurrying chemicals to the polishing surface during the polishing operation. 42. A method for polishing a substrate having a surface using a polishing apparatus, the first The device has a polishing surface, and the method comprises the following steps: the clamping substrate is read on the polishing surface and the surface of the substrate to be polished is substantially in contact with the lower surface of the polishing surface; pressing the surface of the substrate away from the polishing surface; The removal rate of the material that reduces the edge of the substrate by using a retaining ring to deform the polishing surface around the annular region of the substrate. / (4) Smooth surface and the base Relative movement is provided between the surfaces to polish the surface of the substrate; and the retaining ring is rotated relative to the surface of the substrate against an axis perpendicular to the surface of the substrate to inhibit non-flat polishing of the surface of the substrate. The method of claim 44, wherein the step of providing relative motion between the light-removing surface and the surface of the substrate is included in the polishing operation during the polishing operation. The step of having the substrate, and the step of rotating the holding ring in the step of rotating the holding ring at a speed not equal to the substrate held on the sub-carrier. 44. The method of claim 42 , the step of rotating the holding ring comprises the step of rotating the holding ring in a direction different from the substrate, 4 5. The method of the fourth item of the patent scope of the second object, and the hanging of the present Applicable to China National Standard Polishing U-in 9 91874 1246448 H3 package = one transmission mechanism is transferred to the holding ring, and the step of 46 包含 includes operating the transmission mechanism 俾 rotation holding ring The method of claiming a patent, wherein the substrate is a body. 47. A polishing head, the substrate of the polishing head surface on the polishing surface is positioned on the polishing device - the carrier 1 = The calendering device comprises a carrier, a clamping substrate, and a second carrier and is adapted to be used during the light-removal operation and a holding ring is provided around the sub-carrier. 2 the retaining ring has a lower surface. The surface of the substrate is flush and contacts the polishing surface during the operation of the light, and the rotating type is firmly fixed; the device of the carrier allows the holding ring to rotate relative to the sub-carrier to inhibit the polishing of the substrate. The moving head, wherein the sub-carrier can rotate the substrate clamped thereon during the polishing process, and the device in which the rotation holding % can rotate the holding ring at a different speed from the substrate clamped on the sub-carrier. 49. The polishing head of claim 47, wherein the carrier further comprises a support ring having a face-to-face relationship with the upper surface of the retaining ring, applying pressure to the retaining ring during the polishing operation, and wherein the retaining garment is The device that rotates relative to the substrate includes a bearing that separates the support ring from the retaining ring. The polishing head of the item 47 of the patent application scope further includes a transmission mechanism that is lightly coupled to the holding ring, and the transmission mechanism causes the holding ring to be thrown on the sub-carrier. The substrate rotates. 〕 NS) A4 Zhen Ge (210 X into the lane, 10 91874 1246448 :=利範圍第47項之拋光頭,其中該固持環與拋光 、擦力致使固持環於拋光操作期間相對於副載 具轉動。 52.如申請專利範圍第42 π心万沄具中該基板包含半導體 晶圓。 53 -種基板’其係經由如中請專利範圍第42項之方法處理 製造。 54.種半V體晶圓,其係經由如申請專利範圍第〇項之方 法處理製造。 ' 5 5.一種抛光頭,係用以將具有—表面之基板定位於抛光裝 置之拋光面之拋光頭,該拋光裝置包含一載具其有一 底面’該底面包括 —Γ~ ^下表面,該下表面適合於拋光操 作/月間夾持基板,該载具設置有多個埠口延伸貫穿底 面^繞下表面周圍用以於操作期間配漿拋光物質至拋 光面上。 經濟部中央標準局員工福利委員會印製 56. 如申請專利範圍第55項之拋光頭,其中之該多個璋口進 一步適合配送包含磨料的料漿至拋光面上。 57. 如申請專利範圍第55項之拋光頭,其中該拋光面包含一 個有固疋磨料於其上之拋光面;以及其中多個埠口進 一步適合於抛光操作期間配送水至拋光面上。 58. 如申請專利範圍第55項之拋光頭,其中多個埠口係設置 於固持環内部。 59·如申明專利範圍第55項之拋光頭,其中該載具進一步包 11 91874 1246448:= The polishing head of item 47, wherein the retaining ring and the polishing and rubbing force cause the retaining ring to rotate relative to the sub-carrier during the polishing operation. 52. The substrate comprises a semiconductor wafer as claimed in the 42nd π heart-shaped cookware. 53-type substrate' is manufactured by the method of claim 42 of the patent application. 54. A semi-V-body wafer, which is manufactured by a process as described in the scope of the patent application. a polishing head for positioning a substrate having a surface on a polishing surface of a polishing apparatus, the polishing apparatus comprising a carrier having a bottom surface, the bottom surface including a lower surface The lower surface is adapted for a polishing operation/monthly holding of the substrate, the carrier being provided with a plurality of slits extending through the bottom surface around the lower surface for slurrying the polishing material onto the polishing surface during operation. Printed by the Employees' Welfare Committee of the Central Bureau of Standards of the Ministry of Economic Affairs 56. For the polishing head of the 55th patent application, the plurality of rinsing mouths are further suitable for dispensing the slurry containing the abrasive to the polishing surface. 57. The polishing head of claim 55, wherein the polishing surface comprises a polishing surface having a solid abrasive thereon; and wherein the plurality of openings are further adapted to dispense water onto the polishing surface during the polishing operation. 58. The polishing head of claim 55, wherein the plurality of mouthpieces are disposed inside the retaining ring. 59. The polishing head of claim 55, wherein the carrier further comprises 11 91874 1246448 係夾持於該承受. ^ 上;以及其中該固持環係旋轉式严 繞副載具設置且m ^ 评八% ^错一個環形空間而與副載具隔開。 6 0.如申明專利範園楚 圍弟59項之拋光頭,其中之該多個埠 設置於固持環鱼%巷 早π係 衣興4载具間的環形空間内部。 6 1.如申請專利筋囹&amp; ^ 寸』靶圍第60項之拋光頭,其中冬 一致隔開環繞固持環與副載具間的環形空㈣置/係 一專利範圍第60項之搬光頭,其中之該多:〜 含2至30個埠口。 L 认如申請專利範圍第60項之拋光頭,其中之該多個 V適口於維持操作期間沖洗固持環與副載具間 形空間。 I 64.一種化學機械抛光裝i,其具有如巾請專利範圍第55項 之拋光頭,該裝置進一步包含一個拋光面;以及其中 之該多個璋口適合於拋光操作期間配送包含磨料的料 漿至拋光面上。 ’ 經 濟 部 中 央 標 準 局 員 工 福 利 委 員 會 印 製 65. —種化學機械拋光裝置,其具有如申請專利範圍第η 項之拋光頭,該裝置進一步包含一個拋光面帶有固定 磨料於其上,而其中之該多個璋口適合於拋光操作期 間配漿水至拋光面上。 66. —種使用拋光裝置拋光具有一表面之基板之方法,該 拋光裝置具有一個拋光面以及一個載具其具有_底面 其包括一個下表面適合於拋光操作期間夾持基板,該 方法包含下列步驟:將基板定位於載具下表面上,將載 具向拋光面推壓因而將基板表面向拋光面推壓, 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)_ -- 12 91874 1246448 經由載具底面配漿拋光物質至拋光面上。 67. 如申明專利範圍第“項之方法,其中該拋光面包含一種 π有口定磨料於其上之拋光面;以及其中該配漿化學 品至撤光面上之步驟包含配漿水至拋光面之步驟。 68. 如申請專利範圍第66項之方法,其中該拋光裝置進一步 包含一個料漿供應源其可供給料漿至多數埠口,以及 其中該配漿化學品至拋光面之步驟包含配送料漿至拋 光面之步驟。 69·如申請專利範圍第68項之方法,其中該拋光裝置進一步 包含一個沖洗流體供應源,其可供給沖洗流體至多個 璋口 ’以及一個閥用以介於料漿供應源與沖洗流體供 應源間切換,以及其中該方法進一步包含於拋光基板 後沖洗多個槔口之步驟。 70·—種拋光頭,係用以將具有一表面之基板定位於拋光裝 置之拋光面上之拋光頭,該拋光裝置包含一載具其適 合於拋光操作期間夾持基板,一個固持環由載具懸吊, 該固持環係環繞夾持於載具的基板周邊設置,以及配 經濟部中央標準局員工福利委員會印製 漿裝置用以於抛光操作期間配漿來自拋光頭的化學品 至拋光面上。 71·如申請專利範圍第70項之拋光頭,其中該配漿來自拋光 頭之化學σσ之裝置包含配送包含磨料之料漿至抛光面 之裝置。 72·如申請專利範圍第70項之拋光頭,其中該拋光面包含一 個具有固定磨料於:g:上之拋光面;以及其中該配漿來 本紙張尺度適用中國國家標準(CNS) A4規袼(210 X 297公釐) 13 91874 1246448 H3 自拋光頭之化風口 予之裝置包含於拋光操作期間配送水 主扼元面上之裝置 73.如申請專利範圚箓 阁第70項之拋光頭,其中該配 頭之化學品之f詈勺人夕 u自拋先 衣置包含多個埠口設置於固持環内 7 4 ·如申請專利範圍笙 圍第73項之拋光頭,其中該載具進一步包 含一個副載JL,# 一、“副载具有個承受面,於該承受面於 抛光麵二期間基板被夾持於其上,以及其中固持環係 旋轉弋衣、疋田ij載具周圍設置且以一個環形空間而與副 載具隔開。 乃.如申請專利範圍第74項之拋光頭,其中多個埠口係設置 於固持環與副載具間的環形空間内部。 76. 如申請專利範圍第66項之方法,其中該基板包含半導體 晶圓。 77. —種基板,其係經由如申請專利範圍第66項之方法處理 製造。 7 8. —種半導體晶圓,其係經由如申請專利範圍第66項之方 法處理製造。 經濟部中央標準局員工福利委員會印製 79.—種由基板表面去除材料之拋光裝置,該拋光裝置包 含: 一拋光頭,其適合於拋光操作期間夾持基板;以 及 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 一拋光面,其包含多個腔穴俾當基板與拋光面間 有相對運動時,分佈化學品介於夾持於拋光頭上的基 板與拋光面間,多個腔穴係以第一區不同於第二區之 14 91874 1246448And the retaining ring is rotatably disposed around the sub-carrier and is separated from the sub-carrier by an annular space. 6 0. For example, the polishing head of the 59 patents of Fan Yuanchu, the plurality of 埠 is set inside the annular space between the retaining ring fish and the early π system. 6 1. For example, apply for the polishing head of the 60th item of the patented tendon &amp; ^ inch range, in which the winter is uniformly separated by the annular space between the retaining ring and the sub-carrier (four). The bald head, which is more: ~ contains 2 to 30 mouthwashes. L. The polishing head of claim 60, wherein the plurality of V fittings flush the retaining ring and the sub-carrier space during the maintaining operation. I 64. A chemical mechanical polishing apparatus having a polishing head according to claim 55, further comprising a polishing surface; and wherein the plurality of openings are adapted to dispense abrasive-containing material during a polishing operation Slurry onto the polished surface. 'The Ministry of Economic Affairs, Central Bureau of Standards, Staff Welfare Committee printed 65. A chemical mechanical polishing device having a polishing head as claimed in claim η, the device further comprising a polishing surface with a fixed abrasive thereon, wherein The plurality of jaws are adapted to dispense slurry to the polishing surface during the polishing operation. 66. A method of polishing a substrate having a surface using a polishing apparatus, the polishing apparatus having a polishing surface and a carrier having a bottom surface including a lower surface adapted to hold the substrate during a polishing operation, the method comprising the following steps : Position the substrate on the lower surface of the carrier, push the carrier toward the polishing surface and push the surface of the substrate toward the polishing surface. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) _ - - 12 91874 1246448 Polishing material onto the polishing surface via the bottom surface of the carrier. 67. The method of claim 2, wherein the polishing surface comprises a polishing surface on which the π has a fixed abrasive; and wherein the step of dissolving the chemical onto the light-removing surface comprises mixing water to polishing The method of claim 66, wherein the polishing apparatus further comprises a slurry supply source for supplying the slurry to the plurality of mouthwashes, and wherein the step of the slurrying chemicals to the polishing surface comprises The method of dispensing a slurry to a polishing surface. 69. The method of claim 68, wherein the polishing apparatus further comprises a flushing fluid supply source for supplying flushing fluid to the plurality of ports and a valve for intervening Switching between the slurry supply source and the flushing fluid supply source, and wherein the method further comprises the step of rinsing the plurality of openings after polishing the substrate. 70. A polishing head for positioning a substrate having a surface on the polishing device a polishing head on the polishing surface, the polishing apparatus comprising a carrier adapted to hold the substrate during the polishing operation, and a holding ring suspended by the carrier, the solid The holding ring is placed around the periphery of the substrate held by the carrier, and the Central Bureau of Standards Staff Welfare Committee printing paste device of the Ministry of Economics is used to dispense the chemicals from the polishing head to the polishing surface during the polishing operation. The polishing head of claim 70, wherein the apparatus for dispensing the chemical σ σ from the polishing head comprises means for dispensing the slurry containing the abrasive to the polishing surface. 72. The polishing head of claim 70, wherein The polished surface comprises a polished surface having a fixed abrasive on: g:; and wherein the paper is applied to the Chinese National Standard (CNS) A4 gauge (210 X 297 mm) 13 91874 1246448 H3 self-polishing head The device for the ventilating port is included in the device for distributing the main surface of the water during the polishing operation. 73. For the polishing head of the 70th item of the patent 圚箓 圚箓, the chemical of the head is 人 人 人The first garment is provided with a plurality of jaws disposed in the holding ring. The polishing head is in the 73rd item of the patent application, wherein the carrier further comprises a sub-load JL, #一"The sub-loader has a bearing surface on which the substrate is clamped during the polishing surface, and in which the holding ring-rotating garment, the 疋田 ij vehicle is disposed around the belt and the sub-carrier Separated. The polishing head of claim 74, wherein the plurality of mouthpieces are disposed inside the annular space between the retaining ring and the sub-carrier. 76. The method of claim 66, wherein the substrate comprises a semiconductor wafer. 77. A substrate produced by processing according to the method of claim 66. 7 8. A semiconductor wafer manufactured by a process as claimed in claim 66. Printed by the Staff Standards Committee of the Central Bureau of Standards of the Ministry of Economic Affairs 79. A polishing apparatus for removing material from the surface of a substrate, the polishing apparatus comprising: a polishing head adapted to hold the substrate during the polishing operation; and the paper scale is applicable to the Chinese national standard (CNS) A4 size (210 X 297 mm) A polished surface containing multiple cavities. When there is relative motion between the substrate and the polishing surface, the distribution of chemicals is between the substrate and the polishing surface held on the polishing head. a plurality of cavities with a first zone different from a second zone 14 91874 1246448 多個腔穴的集中之同t &lt;圖案非均勻的間隔跨拋光面上,俾 從該第一區至該第—^ 一區提供跨撤光面上材料之變化去 除速率。 80. 如申明專利乾圍第79項之拋光裝置,其中,該多個腔穴 每一個均包含平行於該拋光面之非均勻截面積,且其 中該多個腔穴每—_业 / 個戴面積不同於該第一區至該第二 區,以提供在該第—P 乐 &amp;及該弟二區之間在去除速率上 之不同。 81. 如申請專利範圍第7 項之拋光裝置,其中,該多個腔穴 具有實質-致深度以及實質一致而平行於該搬光面之 截面積。 82. 如申請專利範圍第79項之拋光裝置,其中,該多個腔穴 跨拋光面之間隔距離由第一區變化至第二區俾提供第 一區與第二區間的去除速率差異至少5%。 83. 如申請專利範圍第79項之減裝置,其中之該多個腔穴 經濟部中央標準局員工福利委員會印製 比起第一區更為集中在第一區,以及其中該第一區具 有比第二區更低的去除速率。 84. 如申請專利範圍第79項之拋光裝置,其中於第—區的每 直線吋腔穴數目比第二區更多,以及其中該第一區 提供比第二區更低的去除速率。 85. 如申請專利範圍第79項之拋光裝置,其中之該多個腔穴 係選自下列组成的組群: 具有圓形的截面積之腔穴; 穴之同,n域為圖案而配置 國豕棵早(CNS) A4規格(210 X 297公釐) --- 15 91874 1246448 之腔穴; 腔穴; 以具有較高集中 腔穴之螺旋區域為圖案而配置之 以具有較低集 腔穴;以及 腔穴之螺旋區域為圖案而配置之 藉由以具有不 域之圖案而配置^集中的上升區域之同中心的環區 ^ 搞開及定義之腔穴。 •如申请專利範圍第7 q 含一個員之拋光裝置,其中,該拋光面包 腔穴適合於抛先=定於其上之抛光面’以及多個 基板與拋光面間。功間配迗水介於夾持於拋光頭之 87.如:請專利範圍第79項之拋光裝置,其中,該多個腔六 ^於拋光操作期間配送含磨料的料漿介於夹持於拋 光頭的基板與抛光面間。 88·如申請專利範圍第79項之拋光裝置,其中,該拋光面包 含旋轉式拋光面。 經濟部中央標準局員工福利委員會印製 89.-種由基板表面去除材料之拋光裝置,該拋光裝置包 含: 拋光頭’其適合於拋光操作期間夾持基板;〇 及 本紙張尺度適用中國國家標準(CNS) Α4規格(210 χ 297公釐) 一拋光面,其包含多個凹部俾於基板與拋光面 有相對運動時配漿化學品介於夾持於拋光頭的基板 拋光面間,多個具有跨拋光面非均勻深度,該凹部 度由第一區變化至第二區俾提供跨拋光面材斜的去 煙進 rΓΜς、Ad楨坆 ν ιοί八衫、 ' ---------— 16 91874 1246448 區間改變 速率於第一區 90. 如申請專利範圍第89項之拋光裝置,其中,該多個凹部 包括多個腔穴於拋光面,各個腔穴具有戴面積平行拋 光面’且其中多個腔穴各別的截面積由第一區變化至 第二區。 91. 如申請專利範圍第89項之拋光裝置,其中,該多個凹部 包括多個切槽於拋光面上。 92. 如申請專利範圍第1〇4項之拋光裝置,其中,多個切槽 之每一個均具有寬度,且其中多個切槽各別的寬度由 第一區變化至第二區。 93·—種使用拋光裝置由基板表面上去除材料之方法,該拋 光裝置具有拋光頭其適合於拋光操作期間夾持基板, 以及一個拋光面包含多個凹部俾當基板與拋光面間有 相對運動時配漿化學品介於夾持於拋光頭的基板與拋 光面間,多個凹部具有非均勻深度以不同於第一區至 第二區之跨拋光面,俾提供從該第一區至該第二區之 經濟部中央標準局員工福利委員會印製 跨拋光面之材料的可變去除速率,該方法包括下列步 驟: 定位基板於拋光頭上; 將基板表面向拋光面推壓; 配漿化學品至抛光面上:以及 提供基板與拋光面間的相對運動俾以跨抛光面之 變化速率而由基板表面去除材料。 iff.·如申請專利範圍第93項之方法,苴中之兮矣他叫部句技 本紙張尺度適用中國國家標準(CNS) A4規格該夕個凹4匕色 91874 1246448The plurality of cavities are concentrated in the same t &lt; non-uniform spacing of the pattern across the polishing surface, 俾 from the first zone to the first zone providing a rate of removal of material across the relief surface. 80. The polishing apparatus of claim 79, wherein each of the plurality of cavities comprises a non-uniform cross-sectional area parallel to the polishing surface, and wherein the plurality of cavities are each worn. The area is different from the first zone to the second zone to provide a difference in removal rate between the first P&amp; and the second zone. 81. The polishing apparatus of claim 7, wherein the plurality of cavities have a substantial depth and a substantially uniform cross-sectional area parallel to the light-receiving surface. 82. The polishing apparatus of claim 79, wherein the distance between the plurality of cavities across the polishing surface is changed from the first zone to the second zone, and the difference in removal rates of the first zone and the second zone is at least 5 %. 83. If the device of claim 79 of the patent scope is applied, the central welfare bureau employee welfare committee of the plurality of cavity economic departments prints more concentrated in the first zone than the first zone, and wherein the first zone has Lower removal rate than the second zone. 84. The polishing apparatus of claim 79, wherein the number of rectilinear cavities in the first zone is greater than the second zone, and wherein the first zone provides a lower removal rate than the second zone. 85. The polishing apparatus of claim 79, wherein the plurality of cavities are selected from the group consisting of: a cavity having a circular cross-sectional area; the same hole, the n-domain is a pattern and the country is configured豕早早 (CNS) A4 size (210 X 297 mm) --- 15 91874 1246448 cavity; cavity; configured with a spiral area with a higher concentration of cavity to have a lower set cavity And the spiral region of the cavity is arranged in a pattern by a cavity having the concentric region of the raised region of the concentrated region with a non-domain pattern. • A polishing apparatus comprising one member, as in the scope of the patent application, wherein the polishing bread cavity is adapted to be thrown first = the polishing surface fixed thereon and between the plurality of substrates and the polishing surface. The slurry is held between the polishing heads. For example, the polishing apparatus of the 79th patent, wherein the plurality of chambers are disposed during the polishing operation, and the slurry containing the abrasive is placed between the workpieces. Between the substrate of the polishing head and the polishing surface. 88. The polishing apparatus of claim 79, wherein the polished bread comprises a rotating polishing surface. Printed by the Staff Standards Committee of the Central Bureau of the Ministry of Economic Affairs. 89. A polishing device for removing material from the surface of a substrate. The polishing device comprises: a polishing head 'which is suitable for holding the substrate during the polishing operation; and the paper size is applicable to the Chinese national standard. (CNS) Α4 size (210 χ 297 mm) A polished surface containing a plurality of recesses between the substrate and the polishing surface. The slurrying chemicals are interposed between the polishing surfaces of the substrate held by the polishing head. Having a non-uniform depth across the polished surface, the degree of recess varies from the first zone to the second zone, providing a cross-polishing cross-polishing of the polished face material, Ad桢坆ν ιοί 八衫, ' -------- The apparatus of claim 89, wherein the plurality of recesses comprise a plurality of cavities on the polishing surface, each cavity having a wear area parallel polishing surface. And the cross-sectional area of each of the plurality of cavities is changed from the first zone to the second zone. 91. The polishing apparatus of claim 89, wherein the plurality of recesses comprise a plurality of slots on the polishing surface. 92. The polishing apparatus of claim 1, wherein each of the plurality of slits has a width, and wherein the respective widths of the plurality of slits are changed from the first zone to the second zone. 93. A method of removing material from a surface of a substrate using a polishing apparatus having a polishing head adapted to hold the substrate during a polishing operation, and a polishing surface comprising a plurality of recesses for relative movement between the substrate and the polishing surface The slurrying chemical is interposed between the substrate held by the polishing head and the polishing surface, and the plurality of recesses have a non-uniform depth to be different from the cross-polished surface of the first to second regions, and the first region is provided from the first region to the The Central Bureau of Standards Staff Welfare Committee of the Ministry of Economic Affairs of the Second District prints the variable removal rate of the material across the polished surface. The method includes the following steps: positioning the substrate on the polishing head; pushing the surface of the substrate toward the polishing surface; To the polishing surface: and providing relative motion between the substrate and the polishing surface to remove material from the surface of the substrate across the rate of change of the polishing surface. If you apply for the method in the 93rd section of the patent, the name of the paper is called the sentence. The paper size applies to the Chinese National Standard (CNS). The A4 specification is a concave 4 colors. 91874 1246448 夕個切槽其具有實 均勻的寬度。 95·如申凊專利範圍第 多個腔穴,該多個腔々::,其中之該多個凹部包括 質上均勻戴面積。具有平行於該拋光面之實 96. 如申請專利範圍第% 晶圓。 員之方法,其中該基板包含半導體 97. —種基板,苴传被 一糸、、、工由如申請專利範圍第93項之方法製 造。 a 9 8. 一種丰導辦曰m 日日,一係經由如申請專利範圍第93項之方 法製造。 9 9.如申請專利範圍第 弟1員之抛光頭,其中,選擇該延伸 貫穿該撓性件之厚产的客 年又的夕個開口之數目及大小,以提 在〜撓ϋ件之承受面以及該基板之間足夠的摩擦 力’而在抛光操作期間職予轉動能至該基板。 10 0.如申請專利範圖楚 Ν第99項之拋光頭,其中,選擇多個 開口之數目及大小αs _ 人〗U k供至少約百分之66之承受面的 孑L 口總面積。 經濟部中央標準局員工福利委員會印製 101. 如申請專利範圍第6項之拋光頭,其巾,該埠口包含 上升。P以促進被封,並限制該繞性件與該基板上之 變形的程度。 102. 如中請專利範圍第μ之方法,其中,選擇該延伸 貫穿該撓性件之厚度的多個開口之數目及大小,以提 供在該撓性件之承受面以及該基板之間足夠的摩擦 本右適而用中在國 18 91874 1246448The sipe has a uniform uniform width. 95. The plurality of cavities in the scope of the patent application, wherein the plurality of cavities:: wherein the plurality of recesses comprise a uniform uniform wearing area. Having a parallel to the polished surface 96. The first wafer of the patent application range. The method of the member, wherein the substrate comprises a semiconductor substrate, and the substrate is manufactured by the method of claim 93. a 9 8. A kind of 导 曰 日 m day, one line is manufactured by the method of applying for the patent scope item 93. 9 9. If the polishing head of the first member of the patent application scope is selected, wherein the number and size of the opening of the guest that extends through the thick product of the flexure is selected to be carried out in the The surface and the substrate have sufficient frictional force to provide rotational energy to the substrate during the polishing operation. 10 0. For the polishing head of claim 99, wherein the number and size of the plurality of openings αs _ _ U k are provided for at least about 66 percent of the total area of the 面L port. Printed by the Staff and Welfare Committee of the Central Bureau of Standards of the Ministry of Economic Affairs 101. If the polishing head of the sixth paragraph of the patent application is applied, the mouthpiece contains the rise. P promotes sealing and limits the extent of deformation of the winding member and the substrate. 102. The method of claim 19, wherein the number and size of the plurality of openings extending through the thickness of the flexure are selected to provide sufficient coverage between the receiving surface of the flexure and the substrate Friction right and right in the country 18 91874 1246448 獻如中請專利範圍第⑽項之方法,其中,選擇多個開 口之數目及大小以提供至少約百分之66之承受面的孔 口總面積。 i〇4.一種拋光頭,係用以將具有一夷 ^ 表面的基板定位於拋光 裝置的拖光面上,該拋光裝置呈右 衣直吳有在拋光操作期間用 以轉動該拋光頭之傳動機構,此拋光頭包含: -載具’其可於拋光操作期間夾持基板,此載具 具有—下表面以及延伸貫穿該下表面而作為供應抽吸 之埠口; 一撓性件,其牢固固定於載具且伸展跨該載具並 且延伸貫穿該載具之下表面,該撓性件具有可接合該 基板之承受面以及多個延伸通過該撓性件至該承受面 之厚度的開口; 間隔體,其没置於撓性件與下表面間以形成腔 八’該腔穴係藉由該載具之下表面、該間隔體、該撓 性件以及該基板而定義; 一通道’該通道與該下表面連通以: 經濟部中央標準局員工福利委員會印製 對該腔穴抽真空以於拋光操作期間將該基板向 該承受面推壓; 將加壓流體導入該腔穴内部,以便於拋光操 作期間將該基板向該拋光面推壓; 其中,選擇該多個開口之數目及大小俾將該加壓 流體直接施加至該基板; 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 其中,至少該多個開口之其中一個具有邊緣,該 19 91874 1246448 邊緣對著該抛光頭之轉動方向呈有角度者以強化該撓 性件而增加耦合至基板的摩擦力;以及。 其中,該挽性件係從第-位置移動,在該第一位 置中,該撓性件係在該埠口附近中的下表面隔開,而 當達到預定真空時,在第二位置中,該挽性件輕合至 圍繞該埠口之下表面以覆蓋及密封該埠口,因此可將 在该基板上的非期望應力減至最低。 105.如中請專利範圍第⑽項之拋光頭,其中,選擇該延 7貫穿該撓性件之厚度的多個開口之數目及大小,以 提供在該撓性件之承香面 枣又面以及該基板之間足夠的摩擦 力,而在拋光操作期間賦予轉動能至該基板。 亂如中請專利範圍第!㈣之拋光頭,其中,選擇多個 開口之數目及大小以提供至少約百分之66之承 孑L 口總面積。 107.如中請專利範㈣1Q4項之㈣頭1中,該璋口包 含上升唇部以促進密封,並限制該撓性件與 之變形的程度。 經濟部中央標準局員工福利委員會印製 跳如申請專利範圍第32項之拋光頭,其中,可對著垂 直=央持在該副載具上的基板之表面的轴而轉動該固 持環。 109.如申請專利範圍第32項之拋光頭,其令,該固 可相對於該載具而轉動。 八 ⑽如申,專利範圍第47項之拋光頭,其令,用於將該 1246448 H3 夾持在σ亥田j載具上的基板之表面的轴而轉動。 111·如申請專利範圍第47項之拋 八丁用於蔣辞 固持環固定於該載且、、口 載具而轉動。w錢持環相對於該 H2.-種抛光頭,_以將具有_表面的基板 裝置2拋光面上,此拋光頭包含:-載具;—藉由該 載具帶動並可在拋光操作期間夾持基板之副載具;一 可對著該副載具轉動地設置之固持環,該固持環具實 質注滿該基板之表面並在拋光操作期間與該拋光面二 觸之上表面及下表面,可相對於夹持在該副载呈上的 基板而轉動該固持環;以及一有該固持環之上:面的 面對關係並藉由軸承而從該固持環脫離之背環,該背 環可於拋光操作期間將壓力供應至該固持環。 月 113·如申請專利範圍第79項之拋光頭,其中,該多個腔 六包含具有圓形的截面積之凹處。 114.如申請專利範圍第89項之拋光頭,其中,在該第一 區中之多個凹部的深度係大於該第二區中之多個凹部 的冰度,且其中該第一區提供較該第二區為低之去除 速率。 11 5.如申請專利範圍第89項之拋光頭,其中,在該第一 區中之多個凹部的間隔跨越該拋光表面而不同於從該 第一區至該第二區’以提供較在該第一區及該第二區 之間至少百分之5之去除速率的不同。 11 6.如申請專利範圍第90項之拋光頭,其中,該腔穴係 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公爱) ----:-二- 21 91874 1246448 H3 以該第-區不同於該第二區之多個腔穴的集中圖案而 非均勻地間隔跨拋光面上。 U7.如申請專利範圍第91項之拋光頭,其令,多個切槽 係非均勻地間隔跨拋光面上以提供該第一 々 ^ 區不同於該 第一區之跨拋光面的材料去除速率。 Π8.如申請專利範圍第117項之拋光頭,其中,於該第一 區的每一直線吋切槽數目比在該第二區中為多,且其 中該第一區提供低於該第二區之去除速率。 119. 如申請專利範圍第117項之拋光頭,其中,跨抛光面 之多個切槽的間隔係從在該第一區中的每一直線对^ 切槽變化至在該第二區中的每一直線吋2切槽。 120. 如申請專利範圍第91項之拋光頭,其中,多個切槽 具有實質均勻寬度並且均勻地間隔跨拋光面。 經濟部中央標準局員工福利委員會印製 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 91874The method of claim 10, wherein the number and size of the plurality of openings are selected to provide a total area of the aperture of at least about 66 percent of the bearing surface. I〇4. A polishing head for positioning a substrate having a surface on a polishing surface of a polishing apparatus, the polishing apparatus being a right garment having a transmission for rotating the polishing head during a polishing operation The polishing head comprises: - a carrier that can hold the substrate during a polishing operation, the carrier having a lower surface and a slit extending through the lower surface as a supply suction; a flexible member that is secure Secured to the carrier and extending across the carrier and extending through the lower surface of the carrier, the flexure having a receiving surface engageable with the substrate and a plurality of openings extending through the flexure to the thickness of the receiving surface; a spacer that is not disposed between the flexure and the lower surface to form a cavity VIII' defined by the lower surface of the carrier, the spacer, the flexure, and the substrate; The passage is in communication with the lower surface to: the Central Bureau of Standards and Staff Welfare Committee of the Ministry of Economic Affairs prints a vacuum on the cavity to urge the substrate toward the receiving surface during the polishing operation; introducing pressurized fluid into the cavity, Facilitating pressing the substrate toward the polishing surface during the polishing operation; wherein the number and size of the plurality of openings are selected, and the pressurized fluid is directly applied to the substrate; the paper scale is applicable to the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) wherein at least one of the plurality of openings has an edge, the edge of the 19 91874 1246448 being angled against the direction of rotation of the polishing head to strengthen the flexure to increase friction coupled to the substrate ;as well as. Wherein the pulling member is moved from a first position in which the flexure is spaced apart at a lower surface in the vicinity of the jaw, and when a predetermined vacuum is reached, in the second position, The tying member is lightly fitted around the lower surface of the mouth to cover and seal the mouth, thereby minimizing undesired stress on the substrate. 105. The polishing head of claim 10, wherein the number and size of the plurality of openings extending through the thickness of the flexure are selected to provide a dough on the scented surface of the flexure. And sufficient friction between the substrates to impart rotational energy to the substrate during the polishing operation. In the chaos, please ask for the scope of patents! (d) A polishing head wherein the number and size of the plurality of openings are selected to provide at least about 66 percent of the total area of the port. 107. In the first paragraph (4) of the first paragraph (4) of the patent (4), the mouthpiece includes a rising lip to promote sealing and limit the degree of deformation of the flexure. The Employees' Welfare Committee of the Central Bureau of Standards of the Ministry of Economic Affairs prints a polishing head that is in the scope of claim 32, wherein the holding ring can be rotated against the axis of the surface of the substrate on the sub-carrier. 109. The polishing head of claim 32, wherein the fixing is rotatable relative to the carrier. (10) The polishing head of claim 47, wherein the polishing head is used to rotate the 1246448 H3 on the surface of the surface of the substrate on the σHaij carrier. 111. If the patent application is in the 47th item, the octopus is used for the Jiang dynasty. The holding ring is fixed to the carrier and the carrier is rotated. a money holding ring relative to the H2.-type polishing head, to be a polishing surface of the substrate device 2 having a surface, the polishing head comprising: - a carrier; - by the carrier and capable of being polished during the operation a sub-carrier for holding the substrate; a retaining ring rotatably disposed opposite the sub-carrier, the retaining ring substantially filling the surface of the substrate and contacting the upper surface and the lower surface of the polishing surface during the polishing operation a surface that is rotatable relative to a substrate held on the submount; and a backing ring having a facing relationship on the retaining ring and being detached from the retaining ring by a bearing, The back ring can supply pressure to the retaining ring during the polishing operation. The polishing head of claim 79, wherein the plurality of cavities 6 comprise a recess having a circular cross-sectional area. The polishing head of claim 89, wherein the depth of the plurality of recesses in the first zone is greater than the ice of the plurality of recesses in the second zone, and wherein the first zone provides a comparison This second zone is a low removal rate. The polishing head of claim 89, wherein the interval of the plurality of recesses in the first zone spans the polishing surface and is different from the first zone to the second zone to provide A difference in removal rate of at least 5 percent between the first zone and the second zone. 11 6. For the polishing head of claim 90, the cavity is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public) ----:-二-21 91874 1246448 H3 is across the polishing surface in a concentrated pattern in which the first region is different from the plurality of cavities of the second region. U7. The polishing head of claim 91, wherein the plurality of grooving grooves are non-uniformly spaced across the polishing surface to provide material removal of the first 々^ region from the cross-polished surface of the first region rate.抛光8. The polishing head of claim 117, wherein the number of each linear grooving groove in the first zone is greater than in the second zone, and wherein the first zone provides lower than the second zone The removal rate. 119. The polishing head of claim 117, wherein a spacing of the plurality of slits across the polishing surface varies from each straight line in the first zone to each slot in the second zone A straight line 吋 2 slots. 120. The polishing head of claim 91, wherein the plurality of slots have a substantially uniform width and are evenly spaced across the polishing surface. Printed by the Central Bureau of Standards and Staff Welfare Committee of the Ministry of Economic Affairs This paper scale applies to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm) 91874
TW090120699A 2000-08-31 2001-08-23 Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby TWI246448B (en)

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US65296300A 2000-08-31 2000-08-31
US65363600A 2000-08-31 2000-08-31
US09/652,854 US6540590B1 (en) 2000-08-31 2000-08-31 Chemical mechanical polishing apparatus and method having a rotating retaining ring
US09/652,855 US6527625B1 (en) 2000-08-31 2000-08-31 Chemical mechanical polishing apparatus and method having a soft backed polishing head

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400139B (en) * 2006-08-30 2013-07-01 羅門哈斯電子材料Cmp控股公司 Cmp pad having unevenly spaced grooves
TWI572442B (en) * 2009-05-14 2017-03-01 應用材料股份有限公司 Polishing head zone boundary smoothing
TWI574778B (en) * 2015-02-11 2017-03-21 國立勤益科技大學 Polishing machine
CN109661721A (en) * 2016-06-27 2019-04-19 先进尼克斯有限公司 Wet treatment system work holder
CN114905386A (en) * 2021-02-01 2022-08-16 中国石油化工股份有限公司 Pendant pretreatment device and method suitable for uniform corrosion rate test
TWI829909B (en) * 2019-04-03 2024-01-21 日商可樂麗股份有限公司 polishing pad

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10393369T5 (en) * 2002-09-27 2005-08-18 Komatsu Denshi Kinzoku K.K., Hiratsuka Polishing device, polishing head and polishing process
KR100752181B1 (en) * 2005-10-05 2007-08-24 동부일렉트로닉스 주식회사 Chemical Mechanical polishing Apparatus
US9610672B2 (en) * 2014-06-27 2017-04-04 Applied Materials, Inc. Configurable pressure design for multizone chemical mechanical planarization polishing head
CN107214614A (en) * 2017-07-25 2017-09-29 蒋南 A kind of automatic saw blade polishing machine
JP7113626B2 (en) * 2018-01-12 2022-08-05 ニッタ・デュポン株式会社 polishing pad
US20200055160A1 (en) * 2018-08-14 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing method and apparatus

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5020283A (en) * 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
JP2944176B2 (en) * 1990-09-19 1999-08-30 三菱マテリアル株式会社 Ultra-precision polishing method and polishing apparatus for wafer
US5584746A (en) * 1993-10-18 1996-12-17 Shin-Etsu Handotai Co., Ltd. Method of polishing semiconductor wafers and apparatus therefor
US5624299A (en) * 1993-12-27 1997-04-29 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved carrier and method of use
JPH08267357A (en) * 1995-03-31 1996-10-15 Nec Corp Abrasive device of substrate and abrasive method thereof
US6024630A (en) * 1995-06-09 2000-02-15 Applied Materials, Inc. Fluid-pressure regulated wafer polishing head
JP2708022B2 (en) * 1995-08-21 1998-02-04 日本電気株式会社 Polishing equipment
JP3106418B2 (en) * 1996-07-30 2000-11-06 株式会社東京精密 Polishing equipment
JPH10156712A (en) * 1996-11-29 1998-06-16 Oki Electric Ind Co Ltd Wafer polishing device
JP3183204B2 (en) * 1997-01-08 2001-07-09 三菱マテリアル株式会社 Wafer polishing equipment
US5851140A (en) * 1997-02-13 1998-12-22 Integrated Process Equipment Corp. Semiconductor wafer polishing apparatus with a flexible carrier plate
US6056632A (en) * 1997-02-13 2000-05-02 Speedfam-Ipec Corp. Semiconductor wafer polishing apparatus with a variable polishing force wafer carrier head
JP2897207B1 (en) * 1997-04-04 1999-05-31 株式会社東京精密 Polishing equipment
US5921855A (en) * 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
JPH10315126A (en) * 1997-05-16 1998-12-02 Tokyo Seimitsu Co Ltd Grinding method and device using distributor ring
US6007411A (en) * 1997-06-19 1999-12-28 Interantional Business Machines Corporation Wafer carrier for chemical mechanical polishing
JP3006568B2 (en) * 1997-12-04 2000-02-07 日本電気株式会社 Wafer polishing apparatus and polishing method
JPH11226865A (en) * 1997-12-11 1999-08-24 Speedfam Co Ltd Carrier and cmp device
US6093651A (en) * 1997-12-23 2000-07-25 Intel Corporation Polish pad with non-uniform groove depth to improve wafer polish rate uniformity
US5993302A (en) * 1997-12-31 1999-11-30 Applied Materials, Inc. Carrier head with a removable retaining ring for a chemical mechanical polishing apparatus
JPH11216663A (en) * 1998-02-03 1999-08-10 Sony Corp Grinding pad, grinding apparatus and grinding method
KR100550034B1 (en) * 1998-04-06 2006-02-08 가부시키가이샤 에바라 세이사꾸쇼 Polishing device
KR20000025003A (en) * 1998-10-07 2000-05-06 윤종용 Polishing pad used for chemical and mechanical polishing of semiconductor substrate
US6110012A (en) * 1998-12-24 2000-08-29 Lucent Technologies Inc. Chemical-mechanical polishing apparatus and method
US6368189B1 (en) * 1999-03-03 2002-04-09 Mitsubishi Materials Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
US6225224B1 (en) * 1999-05-19 2001-05-01 Infineon Technologies Norht America Corp. System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer
JP2001298006A (en) * 2000-04-17 2001-10-26 Ebara Corp Polishing device
EP1284840A2 (en) * 2000-05-12 2003-02-26 Multi-Planar Technologies, Inc. Pneumatic diaphragm head having an independent retaining ring and multi-region pressure control, and method to use the same
US6409579B1 (en) * 2000-05-31 2002-06-25 Koninklijke Philips Electronics N.V. Method and apparatus for conditioning a polish pad at the point of polish and for dispensing slurry at the point of polish
JP2002046061A (en) * 2000-07-31 2002-02-12 Mitsubishi Materials Corp Polishing head

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400139B (en) * 2006-08-30 2013-07-01 羅門哈斯電子材料Cmp控股公司 Cmp pad having unevenly spaced grooves
TWI572442B (en) * 2009-05-14 2017-03-01 應用材料股份有限公司 Polishing head zone boundary smoothing
TWI574778B (en) * 2015-02-11 2017-03-21 國立勤益科技大學 Polishing machine
CN109661721A (en) * 2016-06-27 2019-04-19 先进尼克斯有限公司 Wet treatment system work holder
CN109661721B (en) * 2016-06-27 2023-09-19 先进尼克斯有限公司 Workpiece holder for wet processing system
TWI829909B (en) * 2019-04-03 2024-01-21 日商可樂麗股份有限公司 polishing pad
CN114905386A (en) * 2021-02-01 2022-08-16 中国石油化工股份有限公司 Pendant pretreatment device and method suitable for uniform corrosion rate test

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AU2001286972A1 (en) 2002-03-13
WO2002018101A2 (en) 2002-03-07
JP5562370B2 (en) 2014-07-30
JP2012151501A (en) 2012-08-09
KR100920709B1 (en) 2009-10-07
WO2002018101A9 (en) 2003-10-30
KR20030064393A (en) 2003-07-31
JP2004518270A (en) 2004-06-17

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