1240990 玫、發明說明： 【發明所屬之技術領域】 本發明係有關-種超音波換能H之製作方法，_是有關一種 微電容式超音波換能器之製作方法，詳而言之，本發明係利用壓印微 影技術以製作微電容式超音波換能ϋ，其係可大量製作靈敏度高、穩 定度佳之產品。 【先前技術】 超音波檢職術自帛二次世界大酬始魏，轴制於國防軍 事用途，直到年代後期指始大量_於醫學檢測方面。而在所 有超音波檢册術巾’超音_魅(ultrasQnie Transdu㈣係扮演極為 重要的角色’過去幾恃來’產、官、學、研各界均已投人大量之研 究與發展，相關技術亦6日趨成熟，而其中之主流研究方向則一直是 壓電式超音波換能器。 所谓壓電效應有兩種：正壓電效應(direct piez〇dectric 6驗)^ 電效應(converse piezoelectric effect)。當壓電體受到電場作用時，電偶 極矩會被拉長，壓電體會沿電場方向伸長，此即將電能轉換為機械能。 反之，對壓電體施加壓力，則體内之電偶極矩會隨材質之壓縮而變短， 此時壓電體内為了抵抗此種趨勢，將產生電壓以保持原狀態。利用此 特點，壓電式超音波換能ϋ可將賴信賴換為音波信號發射出去， 亦可將接收到之音波信號轉換微電壓信號，因此能做為超音波檢測之 採頭(probe)。常見的壓電體的材料有陶瓷類，如鈦酸鋇（BaTi〇3)、鈦 酸錯锆（PZT)等，還有單晶類，如石英、電氣石、羅德鹽、組酸鹽、 鈮酸鹽等。惟此麵電式超音波難器之成本過高，从件特性方面， 壓電材料之晶格振盈易導致頻寬與音翻對降低，尤有甚者，當其應 用於非接觸制時，因壓f材料經氣之聲音阻抗差異過大，極易造 5 1240990 成不匹配的狀況發生，造齡波信胁細介面產生大量反射的情況 而降低檢測效率。此外，由於解析度與航的_，其更難以應用於 奈米等級之精密檢測技術上。 *有鑑於此，微電容式超音波換能器遂成為近年來各界積極發展研 究之主題，亦已發表了數項相關之專利，例如美國專利公告第M26 582 號、第6，_，832號以及第6,295,247號等等。微電容 構造主要係如圖-所示…基仙上形成有複數個支撐舶，支^ 12上方為—振㈣膜13，而振蘯薄膜13上方則是—上電極層μ。盆中 基板11摻有雜質而具有導電性，其係與上電極層14構成一電容^結 構而由基板11、支撐座12與振盈薄膜I3所包圍構成之中空激振腔體 15則提供振盪_13於振|時，其薄膜上下振動所需之振幅空間。此 2微電容式超音波換能器係具有下列之優點：⑴頻寬可以加大。⑺ ，易形成具有高頻之陣列(array)。（3)可將前段之電路整合於同一石夕晶 圓片上。（4)可大量生產降低成本。微電容式超音波換能器之特點係為 =中空激振腔體與振i薄膜之設計，而此激振雜與振I細之各項 幾何特徵，例如振盪薄膜之半徑與厚度、電極間的垂直距離等均攸關 2個微電容式超音波換能II之效能絲現，因此製程巾所有參數的設 疋莫不希望能將所有的尺寸控制於穩定且一致的規格。目前微電容式 超音波換能器之製程方式係如圖至圖所示，首先，於一基板21 上依序形成一支撐氧化層22、一振盪薄膜層23與一導電層24，再以蝕 亥J微衫方式形成貫穿振盪薄膜層23與導電層24之複數個孔洞乃，最後 透過該孔洞25對支撐氧化層22進行侧。利賴刻液對支撐氧化層22 和振盪薄膜層23兩種不同材料蝕刻選擇比不同之特性，其係可針對支 撐氧化層22加以蝕刻，而較不會蝕刻振盪薄膜層23。因此經由時間之 控制’最後可於支撐氧化層22上形成以孔洞25之位置為甲心而向外擴 張呈圓柱狀之一激振腔體221，如圖所示，一完整之微電容式超音波換 1240990 能器的結構遂可減。雜此製财式，雜㈣激馳體功之形狀 且難以檢驗’其完全需_鎌_，對於餘上讀制如姓刻液 濃度的變鱗均料造餘振韻221尺权變化，轴辟整個 之特性。 此外，孔洞25係作為姓刻液之流入與姓刻副產品⑽流出 之通道，然以此方式易造成激振腔體221的污染且清洗不易而所殘留 之物質更鄉響元狀雜。因此如何料±狀缺點， 之目的所名。 【發明内容】 &本發明之主要目的係提供—種以壓印技術製作微電容式超音波換 月匕器之方法’其係利用一具有特定圖案之母模壓印形成微電容式超音 波換能器所須之激振腔體，以達大量生產、均勾控制並減低成本之功 效。 …本發明之次要目的係提供壓印技術製作微電容式超音波換 能器之方法，藉由精密加工賴之方式，其射射控繼電容式超 音波換能H巾激振腔體之幾何尺寸，使電極狀距離盡可能縮小，以 達提昇超音波換能器靈敏度之功效。1240990 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for manufacturing an ultrasonic transducer H, which is a method for producing a microcapacitive ultrasonic transducer. In detail, this The invention is to make microcapacitive ultrasonic transducers using embossing lithography technology, which can produce a large number of products with high sensitivity and stability. [Previous technology] Ultrasound inspection has been around since the Second World Remuneration, and it has been used for defense military purposes until the late 19th century. In all ultrasonic inspection towels, the “ultrasonic_ charm” (ultrasQnie Transdu) system has played an extremely important role. In the past few years, industry, government, academia, and research circles have invested a lot of research and development, and related technologies have also 6 is maturing, and the mainstream research direction has been piezoelectric ultrasonic transducers. There are two kinds of so-called piezoelectric effects: direct piezoelectric effect (direct piez〇dectric 6 test) ^ electrical effect (converse piezoelectric effect) When the piezoelectric body is subjected to an electric field, the electric dipole moment is stretched, and the piezoelectric body is elongated in the direction of the electric field, which converts electrical energy into mechanical energy. Conversely, when pressure is applied to the piezoelectric body, the electric couple in the body The pole moment will be shortened with the compression of the material. At this time, in order to resist this trend, the piezoelectric body will generate a voltage to maintain the original state. Using this feature, the piezoelectric ultrasonic transducer can be used to convert the trust to sound waves. When the signal is transmitted, the received sound wave signal can also be converted into a micro-voltage signal, so it can be used as a probe for ultrasonic detection. Common piezoelectric materials are ceramics, such as barium titanate (BaTi〇3 ), Titanic acid Zirconium (PZT), etc., as well as single crystals, such as quartz, tourmaline, rhodium salt, histate, niobate, etc. However, the cost of this surface electric ultrasonic device is too high. The lattice vibration of piezoelectric materials can easily cause the reduction of bandwidth and pitch. Especially, when it is applied to non-contact system, the difference in sound impedance between the pressure and the material is too easy to make 5 1240990. A mismatch occurs, and a large number of reflections in the aging wave signal interface reduce the detection efficiency. In addition, due to the resolution and accuracy, it is more difficult to apply it to nano-level precision detection technology. * Yes In view of this, microcapacitive ultrasonic transducers have become the subject of active development research in recent years, and several related patents have been published, such as U.S. Patent Publication No. M26 582, No. 6, _, 832, and No. No. 6,295,247 and so on. The structure of the microcapacitor is mainly as shown in the figure ... There are a plurality of support vessels formed on the base. The top of the support 12 is-vibrating membrane 13 and the top of the vibrating membrane 13 is-upper electrode layer μ. The substrate 11 in the basin is doped with impurities and has conductivity, which A capacitor structure is formed with the upper electrode layer 14 and a hollow-excited cavity 15 formed by the substrate 11, the support 12 and the vibrating thin film I3 is provided with the vibration _13 in the vibration | Amplitude space. The 2 microcapacitive ultrasonic transducers have the following advantages: ⑴The bandwidth can be increased. ⑺, it is easy to form an array with high frequencies. (3) The previous circuit can be integrated in the same On Shi Xi wafers. (4) Mass production can reduce costs. The characteristics of the microcapacitive ultrasonic transducer are = the design of the hollow excitation cavity and the vibrating thin film, and the vibration and vibration Various geometric characteristics, such as the radius and thickness of the oscillating film, and the vertical distance between the electrodes, are all related to the performance of the two microcapacitive ultrasonic transducers II. Therefore, the setting of all parameters of the process towel is not to be able to The size is controlled by stable and consistent specifications. The current manufacturing method of a microcapacitive ultrasonic transducer is shown in the figure to the figure. First, a support oxide layer 22, an oscillating film layer 23, and a conductive layer 24 are sequentially formed on a substrate 21, and then an etching process is performed. A plurality of holes are formed through the oscillating thin film layer 23 and the conductive layer 24 in the Hai-J micro-shirt method, and finally the supporting oxide layer 22 is passed through the holes 25. The Lili etching solution has different characteristics of the etching selection ratio of the supporting oxide layer 22 and the oscillating film layer 23, which can etch the supporting oxide layer 22 rather than etch the oscillating film layer 23. Therefore, through the control of time, one can finally form an excitation cavity 221 on the supporting oxide layer 22 with the position of the hole 25 as the core and expanding outward in a cylindrical shape. As shown in the figure, a complete microcapacitor The structure of the sonic 1240990 can be reduced. Miscellaneous this type of financial system, the shape of the hybrid excite the physical power and it is difficult to test 'its full need _ sickle, for the Yushang reading system such as the change of the concentration of the engraved liquid concentration, the balance of Yu Zhenyun's 221-foot weight change, the axis Break the whole character. In addition, the hole 25 is used as a channel for the inflow of the last name engraving liquid and the outflow of the last name by-products. However, in this way, it is easy to cause the pollution of the excitation cavity 221 and the remaining materials are not easy to clean, and the remaining substances are more complicated. Therefore, how to predict the shortcomings is the name of the purpose. [Summary of the invention] & The main purpose of the present invention is to provide a method for making a microcapacitive ultrasonic wave exchange dagger by imprint technology, which uses a female mold with a specific pattern to form a microcapacitive ultrasonic exchange. The cavity that the energy device needs to excite, in order to achieve mass production, uniform control and reduce the cost. … The secondary objective of the present invention is to provide a method for making a microcapacitive ultrasonic transducer by embossing technology. By means of precision processing, its radiation-controlled capacitive ultrasonic transducer H-skin excites the cavity The geometric size makes the electrode-like distance as small as possible to achieve the effect of improving the sensitivity of the ultrasonic transducer.
Ab σ本《明之又—目的係提供—種城印技術製作微電容式超音波換 能器之方法，其係可避免習知技術必須利用孔洞作為被侧物排出斑 侧物流人之it道的触核，以達提昇碰料度之功效。/、 為達上述之目的，本判—種以料技術祕微電容式超音波換 能器之方法，其步驟係包括有： 、 (a) 提供一基板，該基板係可導電。 (b) 於該基板上形成一支座薄膜層。 (供母模該母模係具有一表面，而該表面上則形成有特定凹凸 7 β4〇99〇 排列之一陣列圖案。 ()加壓於該母模’使其具有該陣列圖案之表面麼入該支座薄膜層，則 該母模表面上之該陣列圖案係可轉移至該支座薄膜層。 (e)將該母模移除’職支座_層上係形成有特定制之複數個薄膜 層凹槽。 ⑺提供一聚合物薄膜層。 (g)於該聚合_則上形稱顺顯之紐個上雜板，而相鄰兩 兩該上電極板之間係有一導電内連線將其連結。 (= 字該聚合_麟之下表_著於該支座_層之上方，該複數個 =層凹槽遂形成複數個封閉腔體，其中該封閉腔體之上方係為該 I物薄膜層，而該聚合物薄膜層上方則為該複數個上電極板，且 該複數個上電極板係分別一一對應於該複數個封閉腔體。 立At奖為達上述之目的，本發明一種以壓印技術製作微電容式超 曰波換4之方法更具有—較佳實施例中，其步驟係包括： 0’)提供一基板，該基板係可導電。 (b’)於該基板上形成一支座薄膜層。 ㈡提^狀賴，該賴物—外絲，術卜表面上則形成 有特疋凹凸排列之一陣列圖案。 (d’n—ΠΓ驅動該圓柱狀母模加驗猶支座細層，該外 表面上之該陣列圖案即可轉移至該支座 薄膜層上形成特定排列之複數個薄顧凹槽。/、釘於敲座 0’)提供一聚合物薄膜層。 (f) 上形_狀排列之複數個上電極板，而相鄰 ，兩兩該上電極板之間係有一導電内連線將其連結。 (g’）將=聚合物薄膜層之下表面黏著於該支座薄膜層之上方，额數 個越層凹槽遂形成複數個封閉腔體，其中該封閉腔體之上方係 8 1240990 為該聚合㈣朗，而該聚合物細層上方則為該複數個上電極 板’且該複數個上電極板係分別一一對應於該複數個封閉腔體。 一本發明之則述與其他目的、特徵及伽，在配合下顺明及所附 圖示後，將可獲得更好的理解。 【實施方式】 以下將舉出較佳貫施例以詳細說明本發明一種中央刻槽式圓柱狀 平凸透鏡聚絲置的詳細手段、動作方式、達成功效以及本發明的直 他技術特徵。 奈米壓印郷技術於I"5年與丨"6年由類普林_大學電機系 的周郁教授所屬研究目騎發表㈣研究論文，揭開奈雜印微影技 術研=序幕。奈米壓印微影不像傳統的微影方法，它本身不使用任 可’、月bi的g)此’奈米取卩微影的解析度並不會受波在阻劑令 射月文射、干涉’以及來自基板的回向散射之效應所限制，其係屬 於-物理的製程，而不屬於化學的製程。事實上，壓印微影技術早在 1970年代制便已丨現，其蝴之研究也如雨齡胁純，而相關 之專利申請業已曰益增加，例如美國專利公告第·,226號 '第 5,259,926號、第 5,772,9〇5號、第 6,375，_號等等。 圖二A至圖二E係、為將壓印微影技術應用 首先，、其係於;基板31上依序形成―輯層32與—可挽性材；; / f 33 ’並以適當之方法使該可撓性材料薄膜33處於可娜狀態。 =著使用-表面具有凹凸_之母模34，將其施壓於可撓性材料薄膜 3上’厂遂可使母模34表面之_轉移至可撓性材料賴％上。而 於壓印過程巾，簡34表面之凸出部分係不接觸舰緣層η，其凸 出部分係可於可撓性材料薄膜33上形成一較薄區塊331。將母模％ 移除，則可撓性材料薄膜33上即形成具有高低相對應於該母模圖案之 9 下tit ’以侧方式將較薄區塊331移除，其係可使較薄區_ 絕緣層321露出，最後再將露出之部分絕緣層321以及位 相f 'it上方之可撓性删膜33移除，則糊％上便可形成 4姻案之料(mask)，其射提供後財導體製程之 用，例如離子佈值等。 明顯地’取卩鄕技術解導财財料 =鲁«是频之應収可加快生雜程，麟下昂糾光罩製作 ra p 再者’母模對於排序整齊之陣列圖案尤有其高度應用性， 因此右能將料郷技_職電容式超音波難器之㈣上，勢必 為產業界帶來極大的創新。其係具有下列之優點·· (1) 可以大置生產。 (2) 成本低廉。 ⑶使用冋分子材料作為振盪細與激振腔體之主體，其選擇性很 夕’甚至可以選擇生物相容⑼o_compatible)之材質使得微電容式 超音波換能器更有利於生物醫學上的應用。 (4)腔體的高度可以縮小，且整體的均勻度可以加以控制良好，以提 幵換此之靈敏度。 ⑶製作激振腔體之高分子材料可以使得傳統利用石夕基材造成的萊 姆波(Lamb wave)效應獲得控制和改善。 (6) 傳統製程中激振腔體與振盪薄膜必須為不同材質，其熱膨脹係數 不同之結果，容易造成超音波換能器特性改變，影響其穩定度。 本發明之方法中，激振腔體與振盪薄膜係可使用相同之材料以解 決此一習知技術中不可避免之問題。 (7) 以壓印方法製成之微電容式超音波換能器之激振腔體高度可控 制至微/奈米尺寸，將可使換能器性能提高並更具其應用效益。 圖四A至圖四G係為本發明之一較佳實施例示意圖，其首先係提 j24〇99〇 供-基板41，該基板41係摻有雜質而具 做為微電容式超音波換能器之下電極板，較佳者^更可种 =或下表面形成複數個導㈣板，_化作秘餘切 導電片板彼此之間係有-導電内連線將其: 二/Γ 形成一支座薄膜層42，為配合麼印技術之 ϊ 2材1搞可挽性馬分子材料，例如聚？基丙稀酸甲醋（pmma) 而為了提幵微電容式超音波換能器之靈敏度，此支座薄膜層幻之 ΐ度好时料微餘紐音雜脑讀_體的外 該母模51之一表面511上形成有特定凹凸排 512。利用一驅動裝置加壓該母模5W吏其具有陣列 似植之表面5U廢入支座薄膜層42上’由於支座薄臈層42之材 ^為可撓性材料’因此母模51表面上之陣列圖案512係可轉移至支座 /膜層42上。接著將母模51自支座薄膜層42上移除，則支座薄膜層 ^上便可形成特定排列之複數個薄膜層凹槽421。在加壓母模M之^ 程中’其表面之凸出部分將不接觸到基板41表面，換言之，母模表面 凸出部分所形成之薄膜層凹槽421的底部將不接觸到基板4!表面，其 2然留有-厚度較薄之支座薄膜’最後再以_方式將該較薄的支座 麵去除，使薄膜層凹槽421之底部露出基板41。其好處是可避免母 模與基板的接觸造成彼此的刮傷或損傷。而其壓印之方式可為熱壓 印、雷射光輔助壓印、奈米壓印或其他各種可造成壓印效果之壓印技 術0 接著，於另一平台提供一聚合物薄膜層43，並於該聚合物薄膜層 43上方形成特定陣列排列之複數個上電極板441，其係用來作為微^ 奋式超音波換能器中所需之上電極板，而所有上電極板441之間均分 別有一導電内連線將其連接。最後將聚合物薄膜層43黏著於支座薄膜 層42之上，如此一來，所有的薄膜層凹槽421遂分別形成一封閉腔體 1240990 422。其中聚合物薄膜層43與支座薄膜層42係可使用相同的材料，如 此可避免熱膨脹係數不同造成超音波換能器特性改變，進而影響其穩 定度的問題。封閉腔體422上方係為聚合物薄膜層43，而聚合物薄骐 層43上方則為上電極板441，每個上電極板441係分別對應一個封閉 腔體422。如圖四Η所示，其係為本發明所完成之微電容式超音波換 能器的上視圖，上電極板441大約係落在相對於封閉腔體422中央區 域之位置，其截面積大小約略為封閉腔體422截面積之6〇%〜7〇%，且 相鄰兩兩上電極板441之間均分別有一導電内連線4幻將其連接。 此外，上述之複數個上電極板441的形成方法係可利用傳統半導 體顯影、曝光、蝕刻之步驟製成，其步驟包括有： ⑴於聚合物薄膜層43上方形成一導電層糾，再於導電層Μ上方塗佈 一光阻層。 (2)利用曝光顯影製程，使該光阻層形成具有特定排觸案之—光阻遮 罩。 (3)姓刻導電層44 ’則導f層上方有該光阻遮罩之區域將不被姓刻， 其遂可而形成上電極板441。 此-方法尤其細在導電層μ為麵、乡晶 若導電層亦為可撓性材料，則上電極板w的製作方式亦可4使用曰寺 技術，其步驟為： (1 )於聚合物薄膜層43上方形成一導電層44。 (2，)，供-第二母模’其表面係形成有特定凹凸排列之一第二陣列圖 (3 )加壓於第—母模，使其具有第二^ ^ 如此射除爾叫 :列之複數個上電 (4)移除該第二母模，則導電層44上便可形成有特定排 極板441。 12 1240990 圖^關五〇係為本發明之又—較佳實施例示意圖，其首先係 提供一基板61，該基板61係摻有雜皙而 ’、 係做為微電容式超音波換能器之下電極板:η ’此-基板61 ^下=板，而該複數個導電片板彼此之間係、有—導電内連線將其 ΐ二Γ於1上形成—支座薄膜層62，為配合壓印技術 材枓為可撓性高分子材料，例如聚甲基丙烯酸"（續A) 支座薄膜層62係作為微電容式超音波換能器之激振腔體的外 者提供-圓柱狀母模71，該母模之外表面7ιι上卿成有特定 列之-陣列圖案刀2，利用一驅動裝置使圓柱狀母模力加壓滾 =支座薄顧62，勝卜表面上之__ 712即可獅至支座薄膜 二62上’並直接於支座薄膜層62上形成特定排列之複數個薄膜層凹 槽621。同樣地，在加壓圓柱狀母模71之過程中，其表面之凸出部分 將不接綱基板61表面，換言之，母模表面之凸出部分所形成的薄膜 層凹槽切之底部將不接觸雌板51之表面，其仍然留有一厚度較薄 之支座薄膜’之後再以侧方式將該較薄的支座薄膜去除，使薄膜層 凹槽521之底部露出基板51。 接著’於另-平台提供—聚合物薄膜層63，並於該聚合物薄膜層 f上方形成特定陣列排列之複數個上電極板641，其係用纟作為微電 谷式超音波換能H中所需之上電極板，而所有上電極板⑷之間均分 別有一導軸連線將其連接。最後將聚合_顧63黏著於支座薄膜 層62之上，如此一來，所有的薄膜層凹槽621遂分別形成一封閉腔體 622。封閉腔體622上方係為聚合物薄膜層Μ，而聚合物薄膜層δ3上 方則為上f極板64卜每個上電贿641係分賴應—個封閉腔體 622。其中’上電極板641大約係落在相對於封閉腔體622中央區域之 位置，其截面積大小約略為封閉腔體622截面積之6〇%〜7〇%，且相鄰 1240990 兩兩上電極板64丨之間均分別有—導電内連線Μ2將其連接。 所述該複=上電極板641之形樹如細—較佳實施例 之材料為金屬、多晶料固體薄膜時，苴可 傳統半導體顯影、曝光、姓刻之步驟加以製成。而若導電層64之 =料為可撓性材料時，其係可使哪卩方法製成，罐卩之方^ 2較佳實施例所述之—般母模壓印方法，或_本實施例中利用圓 太=筒母模之方法加以製程，其還可利用熱壓印、雷射光辅助壓印、 不米壓印或其他各種可造成壓印效果之壓印技術。 再者，無論第-她實關亦或是第二触實_，其上電極板 ^1作，均可在聚合轉膜絲合於支座薄膜層之後再加以進行。換 5之’其製程步驟麵於—基板上形成—支座薄膜層，再彻壓印技 術於該支座薄賴上形成複數個凹槽，接著將—聚合物_層黏合於 該支座薄麟上方，職複數個凹槽便可形成微電容式超音波換i哭 所需之複數個封閉腔體，最後再於聚合物薄膜層上方形成相對應於^ 個封閉腔體之上電極板。 總之，以上所述者，僅為本發明之較佳實施例而已，當不能以之 限疋本發明所實施之範圍。大凡依本發明_請專利範圍所作之均等變 化與修飾’皆應仍屬於本發明專利涵蓋之範_，謹請貴審查委員明 鑑，並祈惠准，是所至禱。 —、 【圖示簡單說明】 圖一為微電容式超音波換能器基本構造之示意圖。 圖二八至圖二。為習知技術中微電容式超音波換能器之製作方法 的示意圖。 圖二A至圖二E為將壓印微影技術應用於半導體製程上之示意圖。 圖四A至圖四G為本發明利用壓印技術製作微電容式超音波換能 14 1240990 器之方法的第一較佳實施例示意圖。 圖四Η為本發明所製成之微電容式超音波換能器的上視圖。 。圖五Α至圖五G為本發明利用壓印技術製作微電容式超音波換能 器之方法的第二較佳實施例示意圖。 圖號說明： 12-支撐座 14-上電極層 221-激振腔體 24-導電層 32-絕緣層 331-較薄區塊 42-支座薄膜層 422-封閉腔體 44-導電層 442-導電内連線 511-母模表面 62-支座薄膜層 622-封閉腔體 64-導電層 642-導電内連線 &基板 振盪薄膜 15_激振腔體 21_基板 22-支撐氧化層-振盪薄膜層 2 5-孔洞 31-基板 33- 可撓性材料薄膜 34- 母模 41-基板 421-薄膜層凹槽 43-聚合物薄膜層 441-上電極板 51-母模 512-陣列圖案 61-基板 621-薄膜層凹槽 63-聚合物薄膜層 641-上電極板 15 1240990 71-圓柱狀母模 711-圓柱狀母模表面 712-陣列圖案 16Ab σ This "Mingzhiyou-Purpose is to provide-a kind of urban printing technology to make a microcapacitive ultrasonic transducer, which can avoid the conventional technology must use holes as the side object to exit the side of the logistics person. Touch the nucleus to achieve the effect of increasing the impact. /. In order to achieve the above-mentioned purpose, this judgment-a method of using a material-based microcapacitor ultrasonic transducer, the steps include: (a) providing a substrate, the substrate is conductive. (b) A support film layer is formed on the substrate. (For the master mold, the master mold has a surface, and an array pattern of a specific uneven 7 β 4099 array is formed on the surface. () Is the surface of the master mold pressed so that it has the array pattern? Into the support film layer, the array pattern on the surface of the master mold can be transferred to the support film layer. (E) The master mold is removed. A specific number of systems are formed on the support_layer. A thin film layer groove. ⑺ Provide a polymer thin film layer. (G) On the polymerization, the upper surface is called a smooth upper plate, and there is a conductive interconnection between two adjacent upper electrode plates. Line to connect them. (= The word the convergent_Lin table_at the top of the support_layer, the plurality of = layer grooves then form a plurality of closed cavities, where the upper part of the closed cavity is The I thin film layer, and above the polymer thin film layer are the plurality of upper electrode plates, and the plurality of upper electrode plates respectively correspond to the plurality of closed cavities one by one. The At Award is to achieve the above purpose. In the present invention, a method for manufacturing a microcapacitor type super wave switching 4 by imprinting technology has more-in a preferred embodiment, The steps include: 0 ') providing a substrate, the substrate can be conductive. (B') forming a base film layer on the substrate. An array pattern is formed with a special concavo-convex arrangement. (D'n-ΠΓ drives the cylindrical master mold to inspect the fine layer of the support, and the array pattern on the outer surface can be transferred to the support film layer to form The specific arrangement of a plurality of thin grooves. /, Nailed to the knock seat 0 ') to provide a polymer film layer. (F) a plurality of upper electrode plates arranged in a shape, and adjacent, two pairs of the upper electrode A conductive interconnect is connected between the plates to connect them. (G ') The lower surface of the polymer film layer is adhered to the top of the support film layer, and a plurality of overlying grooves form a plurality of closed cavities. Where the upper part of the closed cavity is 8 1240990 is the polymer matrix, and the upper part of the polymer fine layer is the plurality of upper electrode plates', and the plurality of upper electrode plates respectively correspond to the plurality of seals. Cavity. A description of the present invention and other purposes, features, and gamma, in coordination and attached A better understanding will be obtained after the display. [Embodiment] The following will give a better implementation example to explain in detail the detailed means, operation mode, and effectiveness of a central grooved cylindrical plano-convex lens condenser And the technical characteristics of the present invention. The nano-imprinting technology was published in I " 5 years and 6 years by a research project of Professor Zhou Yu, a professor of the Department of Electrical Engineering of the University, and revealed the research Miscellaneous lithography technology research = prelude. Nano imprint lithography is not like the traditional lithography method, it does not use any of the 'Renke', Yuebi g) This' nano resolution does not take lithography It is limited by the effects of wave-on-resistance, radiation, interference, and backscattering from the substrate. It belongs to the physical process, not the chemical process. In fact, imprint lithography technology has been produced as early as the 1970s, and its butterfly research is as pure as rain age, and related patent applications have been increasing, for example, U.S. Patent Publication No. 226 ' No. 5,259,926, No. 5,772,905, No. 6,375, _ and so on. Figures 2A to 2E are for the application of the lithography technology. First, it is attached to; the substrate 31 is sequentially formed with a "editing layer 32" and a "recoverable material"; / f 33 'and the appropriate The method makes the flexible material film 33 in a kona state. = Using-the female mold 34 having unevenness on the surface, and pressing it on the flexible material film 3, the factory can transfer the surface of the female mold 34 to the flexible material. In the embossing process, the protruding portion of the surface of Jan 34 does not contact the rim layer η, and the protruding portion can form a thinner block 331 on the flexible material film 33. When the master mold is removed, the flexible material film 33 is formed with a height corresponding to 9 times of the master mold pattern. Tit 'removes the thinner block 331 in a side way, which can make the thinner area _ The insulating layer 321 is exposed. Finally, the exposed insulating layer 321 and the flexible deletion film 33 above the phase f 'it are removed, and a mask of 4 marriage cases can be formed on the paste. Hou Cai conductor manufacturing process, such as ionic distribution. Obviously, 'retrieving technical information to guide financial material = Lu «is the frequency of receivables can speed up the process of production, Linxia Ang photoresist making ra p again, and the' master model is particularly high for the ordered array pattern Applicability, so you can put the material technology on the top of the capacitive ultrasonic device, which is bound to bring great innovation to the industry. It has the following advantages: (1) It can be produced in large units. (2) Low cost. (3) The use of 冋 molecular materials as the main body of the oscillating fine and exciting cavity, and its selectivity is even better. Even bio-compatible (o_compatible) materials can be used to make microcapacitive ultrasonic transducers more conducive to biomedical applications. (4) The height of the cavity can be reduced, and the overall uniformity can be controlled well to improve the sensitivity. (3) Making polymer materials for the excitation cavity can control and improve the Lamb wave effect caused by the traditional use of Shixi substrate. (6) In the traditional manufacturing process, the excitation cavity and the oscillating film must be made of different materials. As a result of different thermal expansion coefficients, it is easy to cause changes in the characteristics of the ultrasonic transducer and affect its stability. In the method of the present invention, the same material can be used for the excitation cavity and the oscillating film to solve the inevitable problem in the conventional technology. (7) The height of the excitation cavity of the microcapacitive ultrasonic transducer made by the embossing method can be controlled to the micro / nano size, which will improve the performance of the transducer and have more application benefits. FIGS. 4A to 4G are schematic diagrams of a preferred embodiment of the present invention. First, a j24099 supply-substrate 41 is provided. The substrate 41 is doped with impurities and has a microcapacitive ultrasonic transducer. The electrode plate under the device, the better ^ can be seeded = or a plurality of guide plates are formed on the lower surface, _ turned into secret co-cut conductive sheet plates are connected with each other-conductive interconnects to form: / Γ formation A thin film layer 42 is designed to support the molecular technology of two materials, such as poly? In order to improve the sensitivity of the microcapacitive ultrasonic transducer, the film thickness of this support film is good. A specific uneven row 512 is formed on one surface 511 of 51. A driving device is used to press the master mold 5W. The surface 5U having an array-like planting surface is discarded into the support film layer 42 'Because the material of the support thin layer 42 is a flexible material', the surface of the master mold 51 is The array pattern 512 can be transferred to the support / film layer 42. Then, the mother mold 51 is removed from the support film layer 42, and a plurality of film layer grooves 421 in a specific arrangement can be formed on the support film layer ^. During the process of pressing the master mold M, the convex portion of its surface will not contact the surface of the substrate 41, in other words, the bottom of the film layer groove 421 formed by the convex portion of the master mold surface will not contact the substrate 4! On the surface, a thin supporting film of 'thin thickness' is left. Finally, the thin supporting surface is removed in a manner to expose the bottom of the film layer groove 421 to the substrate 41. The advantage is that the contact between the master and the substrate can avoid scratching or damage to each other. The embossing method can be hot embossing, laser-assisted embossing, nano-embossing or other various embossing technologies that can cause embossing effects. Next, a polymer film layer 43 is provided on another platform, and A plurality of upper electrode plates 441 arranged in a specific array are formed on the polymer film layer 43, which are used as the upper electrode plates required in the micro-excitation ultrasonic transducer, and between all the upper electrode plates 441 Each of them has a conductive interconnect to connect them. Finally, the polymer film layer 43 is adhered to the support film layer 42. In this way, all the film layer grooves 421 form a closed cavity 1240990 422, respectively. The polymer film layer 43 and the support film layer 42 can be made of the same material. This can avoid the problem that the characteristics of the ultrasonic transducer are changed due to different thermal expansion coefficients, and then the stability is affected. Above the closed cavity 422 is a polymer film layer 43, and above the polymer thin layer 43 is an upper electrode plate 441, and each upper electrode plate 441 corresponds to a closed cavity 422, respectively. As shown in Figure 4 (b), it is a top view of the microcapacitive ultrasonic transducer completed by the present invention. The upper electrode plate 441 falls approximately at a position relative to the central region of the closed cavity 422, and its cross-sectional area is It is approximately 60% to 70% of the cross-sectional area of the closed cavity 422, and a conductive inner wire 4 is connected between each of the two adjacent upper electrode plates 441 to connect them. In addition, the above-mentioned method for forming the plurality of upper electrode plates 441 can be made by using conventional semiconductor development, exposure, and etching steps. The steps include: forming a conductive layer over the polymer thin film layer 43, and then conducting A photoresist layer is coated on the layer M. (2) The photoresist layer is formed into a photoresist mask with a specific solution by an exposure and development process. (3) The conductive layer 44 ′ is engraved with the last name, and then the area above the conductive f layer with the photoresist mask will not be engraved with the last name, and then the upper electrode plate 441 may be formed. This method is particularly fine in that the conductive layer μ is a surface, and if the conductive layer is also a flexible material, the manufacturing method of the upper electrode plate w can also use the temple technology, and its steps are: (1) on the polymer A conductive layer 44 is formed on the thin film layer 43. (2,), for the second master mold ', the surface of which is formed with a second array pattern of a specific concave-convex arrangement (3) pressurized on the first master mold so that it has a second ^ ^ so shot: After the plurality of power-on (4) are removed and the second mother mold is removed, a specific row plate 441 can be formed on the conductive layer 44. 12 1240990 Figure 50 is a schematic diagram of another preferred embodiment of the present invention. Firstly, a substrate 61 is provided, and the substrate 61 is doped with a hybrid capacitor. It is used as a microcapacitive ultrasonic transducer. Lower electrode plate: η 'this-substrate 61 ^ lower = plate, and the plurality of conductive sheet plates are connected to each other with-conductive interconnects to form them on 1-support film layer 62, In order to cooperate with imprint technology materials, such as flexible polymer materials, such as polymethacrylic acid ("continued A"), the support film layer 62 is provided as an external cavity of the microcapacitive ultrasonic transducer. -Cylinder-shaped female mold 71, the outer surface of the mother-shaped mold is arranged in a specific column on the outer surface-Array pattern knife 2, using a driving device to pressurize the cylindrical female mold with a force = bearing thin Gu 62, win the surface The above __712 can be a lion to the support film two 62 'and directly form a plurality of film layer grooves 621 in a specific arrangement on the support film layer 62. Similarly, in the process of pressing the cylindrical mother mold 71, the convex portion of the surface will not be connected to the surface of the substrate 61, in other words, the bottom of the film layer groove formed by the convex portion of the mother mold surface will not be cut. After contacting the surface of the female board 51, there is still a thin supporting film left thereon, and then the thin supporting film is removed in a side way, so that the bottom of the film layer groove 521 exposes the substrate 51. Then 'provided on another platform-a polymer film layer 63', and a plurality of upper electrode plates 641 arranged in a specific array are formed on the polymer film layer f, which uses tritium as required in the micro valley type ultrasonic transducer H The upper electrode plate, and all the upper electrode plates ⑷ are respectively connected by a guide shaft line. Finally, the polymerization_Gu 63 is adhered to the support film layer 62, so that all the film layer grooves 621 form a closed cavity 622 respectively. Above the closed cavity 622 is a polymer film layer M, and above the polymer film layer δ3 is an upper f electrode plate 64. Each of the electric power bridging 641 is a closed cavity 622. Among them, the upper electrode plate 641 is located at a position relative to the central area of the closed cavity 622, and its cross-sectional area is approximately 60% to 70% of the closed area of the closed cavity 622, and adjacent upper electrodes are 1240990. The boards 64 丨 are each connected by a conductive interconnect M2 to connect them. The complex-shaped upper electrode plate 641 is as thin as the material of the preferred embodiment. When the material of the preferred embodiment is a metal or polycrystalline solid thin film, it can be made by the steps of conventional semiconductor development, exposure, and engraving. If the conductive layer 64 is a flexible material, it can be made by any method, and the method of the can ^ 2 is the same as that described in the preferred embodiment-the general master stamping method, or _ this embodiment In the process of using the round = cylinder master mold, it can also use hot embossing, laser-assisted embossing, non-meter embossing or other various embossing technologies that can cause embossing effects. In addition, regardless of the first or second reality, the upper electrode plate ^ 1 can be performed after the polymerization transfer film is threaded on the support film layer. Change 5 of its process steps to form-a film layer of the support on the substrate, and then through the embossing technology to form a plurality of grooves on the support film, and then glue-polymer-layer to the support film Above the ridge, a plurality of grooves can form a plurality of closed cavities required for a microcapacitive ultrasonic transducer, and finally an electrode plate corresponding to ^ closed cavities is formed over the polymer film layer. In short, the above are only preferred embodiments of the present invention, and should not be used to limit the scope of the present invention. All equal changes and modifications made according to the present invention _ please patent scope should still belong to the scope covered by the patent of the present invention _, I would like to ask your reviewers to make clear and pray for your approval. —, [Brief description of the diagram] Figure 1 is a schematic diagram of the basic structure of a microcapacitive ultrasonic transducer. Figure 28 to Figure 2. It is a schematic diagram of a manufacturing method of a microcapacitive ultrasonic transducer in the conventional technology. FIG. 2A to FIG. 2E are schematic diagrams of applying lithography technology to a semiconductor process. FIG. 4A to FIG. 4G are schematic diagrams of the first preferred embodiment of the method for manufacturing a microcapacitive ultrasonic transducer 14 1240990 using imprint technology according to the present invention. FIG. 4A is a top view of a microcapacitive ultrasonic transducer manufactured by the present invention. . 5A to 5G are schematic diagrams of a second preferred embodiment of a method for manufacturing a microcapacitive ultrasonic transducer using imprint technology according to the present invention. Description of drawing number: 12-support base 14-upper electrode layer 221-excitation cavity 24-conductive layer 32-insulation layer 331-thinner block 42-support film layer 422-closed cavity 44-conductive layer 442- Conductive interconnects 511-female mold surface 62-support film layer 622-closed cavity 64-conductive layer 642-conductive interconnects & substrate oscillation film 15_excitation cavity 21_substrate 22-support oxide layer- Oscillating film layer 2 5-holes 31-substrate 33-flexible material film 34- master mold 41-substrate 421-film layer groove 43-polymer film layer 441-upper electrode plate 51-master mold 512-array pattern 61 -Substrate 621-Thin film layer groove 63-Polymer thin film layer 641-Upper electrode plate 15 1240990 71-Cylindrical female mold 711-Cylindrical female mold surface 712-Array pattern 16