TWI234817B - Substrate cleaning method and device thereof - Google Patents
Substrate cleaning method and device thereof Download PDFInfo
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- TWI234817B TWI234817B TW92137709A TW92137709A TWI234817B TW I234817 B TWI234817 B TW I234817B TW 92137709 A TW92137709 A TW 92137709A TW 92137709 A TW92137709 A TW 92137709A TW I234817 B TWI234817 B TW I234817B
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- substrate
- carbon dioxide
- cleaning
- snow
- dioxide snow
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- 239000000758 substrate Substances 0.000 title claims abstract description 113
- 238000004140 cleaning Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 30
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 203
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 101
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 96
- 238000004519 manufacturing process Methods 0.000 claims abstract description 37
- 239000007921 spray Substances 0.000 claims abstract description 15
- 238000005507 spraying Methods 0.000 claims abstract description 9
- 241000533950 Leucojum Species 0.000 claims description 21
- 239000010408 film Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000010409 thin film Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 238000003860 storage Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004519 grease Substances 0.000 description 3
- 206010061218 Inflammation Diseases 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 230000004054 inflammatory process Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 1
- 229910003452 thorium oxide Inorganic materials 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
Abstract
Description
1234817 五、發明說明（1) 【發明所屬之技術領域 本發明係有關於一種、音冰1 種清洗基板之方法，嗔；基板之方&，更特別係有關於-【先前技術】 噴H氧化碟雪片於-基板上 目釗，為了洗淨附著於半導體曰 刷電路板及光學元件等基板上之夜晶平面顯示器、印 雪氣流已經逐漸被使用於工業界:潯膜或微粒，二氧化碳 參考第1圖，其顯示習知-4作 袭置包括-儲賴，用以儲—存乳夜之製，裝置2二該製造 化碳# Υ Λ @ f 4 —氣化石反8。該液悲二氧 接充於該儲罐10。-導管12之-端係達 :¾健罐1〇。-控制閥14及一開關閥16係配置於該導管12 ，用以控制該儲罐10之開啟或關。一節流喷頭裝置18， 將^針形閥’其之—端係、連接於該導管1 2之另-端上，用〇 ^儲罐1 0之液態二氧化碳絕熱膨脹而產生二氧化碳雪2 2 ^11. 〇 今=噴嘴23係連接於該節流噴頭裝置丨8之另一端上，用以將 違二氧化碳雪2 2喷出，而產生高速之二氧化碳雪2 2氣流。該 、—氣化碳雪2 2氣流係直接喷洗一基板3 〇之表面，諸如晶圓或 /夜晶平面顯示器等之基板3 〇，以去除附著於該基板之薄膜或 微粒。 、 先前技術中業已提供許多實際的裝置，用以清潔一基板 面。舉例而言’美國專利第5,372,652號，標題為^ ^ 、洗方法（Aerosol Cleaning Method)’’ ，揭示一綠 —宜， 禋用以清4 暴板之喷霧式清潔裝置，其包括具有一噴嘴頭之哈命 〃 1務產连1234817 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for cleaning a substrate with a sound ice, and the method of the substrate & more particularly, it relates to-[prior art] spray H Oxide plate snow flakes on the substrate, in order to clean the night crystal flat display attached to the semiconductor brush circuit board and optical components and other substrates, the snow printing airflow has been gradually used in the industry: film or particles, carbon dioxide reference FIG. 1 shows that the conventional -4 operation includes-storage, storage, storage, and storage of milk, and the device 2 is to manufacture chemical carbon # Υ Λ @ f 4-gasified fossil anti-8. The liquid dioxin is charged into the storage tank 10. -The end of the catheter 12 reaches: ¾ healthy tank 10. -A control valve 14 and an on-off valve 16 are arranged in the conduit 12 for controlling the opening or closing of the storage tank 10. The throttling nozzle device 18 is connected to the other end of the pipe 12 with a needle valve, and adiabaticly expands with liquid carbon dioxide in the storage tank 10 to produce carbon dioxide snow 2 2 ^ 11. 〇 Today = Nozzle 23 is connected to the other end of the throttling nozzle device 丨 8 to spray carbon dioxide snow 2 2 to generate high-speed carbon dioxide snow 2 2 air flow. The gaseous carbon snow 22 stream directly sprays and cleans the surface of a substrate 30, such as a wafer or a night crystal flat display substrate 30, to remove the film or particles attached to the substrate. In the prior art, many practical devices have been provided for cleaning a substrate surface. For example, 'U.S. Patent No. 5,372,652, titled ^ ^, Aerosol Cleaning Method', discloses a green-preferred, spray-type cleaning device for cleaning 4 storm plates, which includes a nozzle Head's Fate 1 Business
1234817 五、發明說明（2) 器。該噴嘴頭係設置於一適當的接近及面向該基板之位置。 該基板係藉由一可旋轉之夾持器所夾持。該液化氣體噴霧將 微粒自該基板逐出，而該基板之旋轉進一步協助移除鬆弛的 微粒。美國專利第5, 3 72, 6 5 2號亦揭示一種喷霧式清潔方 法，包括以一特定速度旋轉一基板，且在旋轉動作配合下喷 出液化氣體流，以協助自基片上移除微粒。然而，於該清洗 過程中必須將該基板旋轉，故對於大型基板而言係較不適用 的0 再舉例而言，如第2a及2b圖所 ^ 吴國專利第6, 500, 758 號，標題為”使用二氧化碳喷射式喷灑選擇性移除金屬薄膜 層之方法（Method For Selective Metal Film Layer Removal Using Carbon Di〇xlde Jet Spray)” ，揭示一種 ^ 法係在晶圓蝕刻過程中，藉由使用二氧化碳雪4〇氣流喷灑斥 於選擇性移除堆積於光阻層42上之金屬薄膜層44而不損宝马 Π =方法中二一持續的高壓二氧化碳雪4 〇氣編 ·潯膜層44 ,藉此迅速冷卻位於該光阻層42上面之言 金^薄膜層44，造成該金屬薄膜層44迅速縮小及拉起，並 脫ί;.基材48之溫度係升高且維持在-明顯邊 声Γ :二：述一乳化碳雪4〇氣流係應用於該金屬薄辟 I表面產ί =層42造成熱的衝擊’在該金屬薄膜層4Ζ 八屬邊绫^數4縫。气裂縫一般係包含至少-個鬆弛# 至屬邊、，彖。一虱化碳雪氣流噴灑係連續地喷灑於該 :::該金屬薄膜層44，留下裸露的光阻層42 ::二於』 W中’必須使用相當大量的二氧化碳，始得以去除該基柄1234817 V. Description of the invention (2). The nozzle head is disposed at an appropriate position near and facing the substrate. The substrate is held by a rotatable holder. The liquefied gas spray expels particles from the substrate, and rotation of the substrate further assists in removing loose particles. U.S. Patent No. 5, 3 72, 6 5 2 also discloses a spray cleaning method, which includes rotating a substrate at a specific speed and ejecting a stream of liquefied gas in cooperation with a rotating action to assist in removing particles from the substrate. . However, the substrate must be rotated during the cleaning process, so it is less applicable for large substrates. For example, as shown in Figures 2a and 2b ^ Wu Guo Patent No. 6,500, 758, title For "Method for Selective Metal Film Layer Removal Using Carbon Dioxlde Jet Spray", a method is disclosed in the wafer etching process by using The carbon dioxide snow 40 airflow spray repels the selective removal of the metal thin film layer 44 deposited on the photoresist layer 42 without damaging the BMW Π = method in the 21 high pressure carbon dioxide snow 40 air knitting film layer 44, This rapidly cools the gold thin film layer 44 located on the photoresist layer 42, causing the metal thin film layer 44 to rapidly shrink and pull up, and to be lifted off; the temperature of the substrate 48 is increased and maintained at-obvious edge Acoustic Γ: Two: Describe an emulsified carbon snow 40 airflow system applied to the surface of the metal thin layer I to produce a layer 42 to cause a thermal shock 'in the metal thin film layer 4Z eight genus edges ^ number 4 slits. Air cracks generally contain at least one slack # to the genus edge, 彖. A spray of carbon snow spray is continuously sprayed on the ::: The metal thin film layer 44, leaving the exposed photoresist layer 42 :: 2: "W" must use a considerable amount of carbon dioxide before it can be removed. Base handle
1234817 五、發明說明（3) 上之薄膜。 因此，便有需要提供一種清 板之薄膜或微粒去除效率，；2反；方法，能夠增加-上。 f政羊，亚且可輕易的應用於大型的基 【發明内容】 本發明之一目的在於提供一 能夠以較少量的二氧化碳，清=其裝置， 為達上述目的，本發明提供一種清洗基板之方法，：： 列步驟·產生一二氧化碳雪 · 一〆 G έ下1234817 V. The film on the description of invention (3). Therefore, there is a need to provide a clear film or particle removal efficiency; 2 methods; can increase-on. It can be easily applied to large-scale substrates. [Abstract] One object of the present invention is to provide a device capable of cleaning the substrate with a relatively small amount of carbon dioxide. In order to achieve the above purpose, the present invention provides a substrate cleaning Method: :: List of steps · Generate a carbon dioxide snow · G〆
火夺月，赁/麗该^ 一氧化石发雪κ私兮甘I ;上帶；==元，固定該基板;產生 :基： 及以該高速之二氧化碳雪氣流喷洗丨 根據本”之清洗基板之方法，於使用二氧化碳之雪氣流| 二，基板之鈾，先使用二氧化碳之雪片喷灑於基板上，由於 二氧化碳雪片之溫度達—5〇 8〇，因此對該基板表面之 薄膜或油脂等具有冷凍之效果，其後再以二氧化碳雪喷洗， 而得以提高該基板之薄膜去除效率。 為了讓本發明之上述和其他目的、特徵、和優點能更明 ‘、’、員下文特舉本發明之實施例，並配合所附圖示，作詳細訇 明如下： 【實施方式】 a參考第3圖，其顯示根據本發明之一實施例之清洗基板之 裝置1 〇 0 °該清洗基板之裝置丨〇 〇係用以洗淨附著於半導體晶 圓、液晶平面顯示器、印刷電路板及光學元件等基板丨3〇上 00852.ptd 1234817 五、發明說明（4) 的薄膜或微粒。 該清洗基板之裝置1〇0包含有一二氧化碳雪片（carbon dioxide flake)之製造單元。該二氧化碳雪片之製造單 元110包含一二氧化碳雪（carbon dioxide snow)之製造單元 112及一延伸管116。該二氧化碳雪之製造單元112具有一喷 嘴1 1 4，用以喷出二氧化碳雪氣流。一般而言，如前文所 述，該二氧化碳雪製造單元Π 2之該喷嘴1 1 4係連接至一高壓 儲罐及一節流喷頭裝置’圖中未示。該高壓儲罐係容納高壓 的液態二氧化碳，且該節流噴頭裝置可使該液態之二氧化碳 絕熱膨脹，而形成二氧化碳雪氣流，並由該喷嘴11 4喷出。 該延伸管1 1 6係套設於該喷嘴1 1 4前緣上，用以使該喷嘴 11 4所產生之二氧化碳雪形成二氧化碳雪片。 該清洗基板之裝置100另包含一炎持單元132及一二氧化碳 雪之製造單元120。該夾持單元132，諸如真空吸盤，係用於 固定該基板130。該二氧化碳雪之製造單元120具有一喷嘴 1 2 4，用以喷出二氧化碳雪氣流。 於操作時，該二氧化碳雪片之製造單元丨丨〇係先被啟動， 而產生二氧化碳雪片喷灑在該基板1 30上。之後，該二氧化 碳雪之製造單元1 2 0會被啟動，產生帶有二氧化碳雪之氣 流’以清理該基板1 3 0上之薄膜或污染物。 精於本技藝者將可瞭解，該二氧化碳雪片之製造單元11〇 將該延伸管1 1 6卸下之後，亦可用於產生二氧化碳雪氣流， 並產生高速氣流清潔該基板丨3〇之表面。於此情況下，該二 氧化破雪之製造單元1 2 〇係可省略的。Fire catches the moon, rents / reaches ^ monoxide, snow, κ, and I; upper belt; == yuan, fixes the substrate; generates: base: and sprays with the high-speed carbon dioxide snow stream 丨 according to this " The method of cleaning the substrate is to use a carbon dioxide snow stream. Second, the uranium of the substrate is first sprayed on the substrate with a carbon dioxide snowflake. Since the temperature of the carbon dioxide snowflake is -5080, the film or grease on the substrate surface It has the effect of freezing, and then sprayed with carbon dioxide snow, so as to improve the film removal efficiency of the substrate. In order to make the above and other objects, features, and advantages of the present invention more apparent, The embodiment of the present invention is described in detail with the accompanying drawings as follows: [Embodiment] a Refer to FIG. 3, which shows a device 100 for cleaning a substrate according to an embodiment of the present invention. The device 丨 〇〇 is used to clean the substrates attached to semiconductor wafers, LCD flat-panel displays, printed circuit boards, and optical components 丨 30. 00852.ptd 1234817 V. Description of the film (4) The substrate cleaning device 100 includes a carbon dioxide flake manufacturing unit. The carbon dioxide flake manufacturing unit 110 includes a carbon dioxide snow manufacturing unit 112 and an extension tube 116. The carbon dioxide The snow manufacturing unit 112 has a nozzle 1 1 4 for discharging a carbon dioxide snow current. Generally, as described above, the nozzle 1 1 4 of the carbon dioxide snow manufacturing unit Π 2 is connected to a high-pressure storage tank and The throttle nozzle device is not shown in the figure. The high-pressure storage tank contains high-pressure liquid carbon dioxide, and the throttle nozzle device can adiabatically expand the liquid carbon dioxide to form a carbon dioxide snow stream, which is sprayed by the nozzle 114 The extension tube 1 1 6 is sleeved on the leading edge of the nozzle 1 1 4 to form the carbon dioxide snow generated by the nozzle 11 14 into a carbon dioxide flake. The substrate cleaning device 100 further includes an inflammation holding unit 132 And a carbon dioxide snow manufacturing unit 120. The holding unit 132, such as a vacuum chuck, is used to fix the substrate 130. The carbon dioxide snow manufacturing system The unit 120 has a nozzle 12 for spraying a stream of carbon dioxide snow. During operation, the manufacturing unit of the carbon dioxide snow flakes is first started, and the carbon dioxide flakes are sprayed on the substrate 130. After that, The carbon dioxide snow manufacturing unit 120 will be activated to generate a gas stream with carbon dioxide snow to clear the film or contaminants on the substrate 130. Those skilled in the art will understand that the carbon dioxide snow flake manufacturing unit 110. After removing the extension tube 116, it can also be used to generate a carbon dioxide snow airflow and generate a high-speed airflow to clean the surface of the substrate 30. In this case, the dioxide-breaking snow manufacturing unit 12 2 Department can be omitted.
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該二氧化碳雪片（carbon dioxide flake)係指固態二氧化 碳係為片狀，其直徑係可約為數# m至數_之間，其產生後 之氣流速度極為緩慢，且其較鬆軟。該二氧化碳雪（carb〇η dioxide snow)係指固態二氧化碳之直徑係可約為數至約 3 0 0 // m之間，其產生後之氣流速度可達〇· 5至2倍音速，且相 較於該二氧化碳雪片，該二氧化碳雪較硬。 參考第4圖’其顯示根據本發明之另一實施例之清洗基板 之裝置2 0 0。該清洗基板之裝置2 〇 〇大體上類似於該清洗基板 之裝置1 0 0，類似的元件將賦予類似的標號。該清洗基板之 裝置包含有一二氧化碳雪片（carbon dioxide flake)之 製造單元210。該二氧化碳雪片之製造單元21〇包含一二氧化 碳雪（carbon dioxide snow)之製造單元212、一噴嘴214及 一延伸官216，用以形成二氧化碳雪片於一基板23〇上。該清 洗基板之裝置200另包含一夾持單元232及一二氧化碳雪之製 造單元22 0。該夾持單元2 32，諸如真空吸盤，係用於固定該 基板2 3 0。該二氧化碳雪之製造單元22〇具有一喷嘴224，用 以喷出二氧化碳雪氣流於該基板2 3 〇上。該清洗基板之裝置 200另包含一輸送單元240，諸如輸送帶，其係用於輪送該基 板2 3 0及該夾持單元232，且其移動方向如箭頭所示。 參考第5圖，其顯示根據本發明之又一實施例之清洗基板 之裝置3 0 0。該清洗基板之裝置3 〇 〇大體上類似於該清洗基板 之裝置2 0 0，類似的元件將賦予類似的標號。該二氧化兩 片之製，單元310包含一二氧化碳雪（carb〇n di〇xUe 之製造單元312、一噴嘴314及一延伸管316，用以形成二氧’The carbon dioxide flake means that the solid carbon dioxide is flake-shaped, and its diameter can be between a few m and a few m. The air velocity after the generation is extremely slow, and it is relatively soft. The carbon dioxide snow refers to the diameter of solid carbon dioxide, which can be between several and about 3 0 // // m, and the velocity of airflow after its generation can reach 0.5 to 2 times the speed of sound, and compared with For the carbon dioxide snow flakes, the carbon dioxide snow is harder. Reference is made to Fig. 4 ', which shows a device 200 for cleaning a substrate according to another embodiment of the present invention. The substrate cleaning device 2000 is substantially similar to the substrate cleaning device 100, and similar components will be given similar reference numerals. The device for cleaning the substrate includes a manufacturing unit 210 of carbon dioxide flake. The carbon dioxide snow flake manufacturing unit 21 includes a carbon dioxide snow manufacturing unit 212, a nozzle 214, and an extension 216 for forming a carbon dioxide snow flake on a substrate 23. The substrate cleaning apparatus 200 further includes a clamping unit 232 and a carbon dioxide snow manufacturing unit 220. The holding unit 2 32, such as a vacuum chuck, is used for holding the substrate 230. The carbon dioxide snow manufacturing unit 22 has a nozzle 224 for spraying a carbon dioxide snow current on the substrate 230. The substrate cleaning device 200 further includes a conveying unit 240, such as a conveyor belt, which is used to rotate the substrate 230 and the clamping unit 232, and the moving direction is shown by an arrow. Referring to FIG. 5, there is shown an apparatus 300 for cleaning a substrate according to still another embodiment of the present invention. The substrate cleaning device 300 is substantially similar to the substrate cleaning device 2000, and similar components will be given similar reference numerals. In the two-piece dioxide production, the unit 310 includes a carbon dioxide snow manufacturing unit 312, a nozzle 314, and an extension tube 316 for forming the oxygen dioxide ’
00852.ptd 第10頁 123481700852.ptd Page 10 1234817
五、發明說明（6) 化碳雪片於一基板上330。該清洗基板之裝置3〇〇另包含複數 個輸送單元，諸如輸送帶340a、340b及340c，其係用於輸送 5亥基板3 3 0。該清洗基板之裝置3 0 0另包含一失持單元3 3 2， 諸如真空吸盤，係用於固定該基板3 3 0。該夾持單元33 2具有 一滾珠螺桿3 3 4及一驅動馬達（圖中未示），用以將該夾持單 元332移動於該輸送帶340b、340c之間。舉例而言，該基板 33 0係可於輸送帶3 40a以二氧化碳雪片喷灑之後，依序^由 該輸送帶340a輸送至該輸送帶340b，其移動方向如箭頭所 示，然後藉該夾持單元3 3 2夾持後以二氧化碳雪氣流進行喷 洗’噴洗完成之後再藉由輸送帶340c運送至下一製程。該、、主 洗基板之裝置300另包含一二氧化碳雪之製造單元Mo，其具 有一噴嘴3 2 4，用以噴出二氧化碳雪氣流於固定於該夾持單 元332上之該基板330。 現請參考第6圖至第8圖，其係用以說明根據本發明之清洗 基板之方法，其中不同圖示間之相同元件將賦予相同之標 號。參考第6圖，一基板230係固定於一夾持單元232上，且 3炎持單元2 3 2係配置於一輸送單元2 4 0上，用以進行清洗製 程，以去除其上之污染物，諸如微粒、金屬薄膜、氧化薄膜 或油脂薄膜等。一二氧化碳雪片（carbon dioxide flake)之 製造單元2 1 0係被啟動以產生二氧化碳雪片2丨8 ,並喷漠於該 基板230上。 、、〜 參考第7圖，然後該基板2 3 0係藉由該輸送裝置24〇移動至 /專待區，或者該基板2 3 0係靜置一預定時間。參考第8圖， 然後一二氧化碳雪（carb〇n dioxide snow)之製造單元220係5. Description of the invention (6) Carbonized snow flakes are 330 on a substrate. The substrate cleaning apparatus 300 further includes a plurality of conveying units, such as conveying belts 340a, 340b, and 340c, which are used for conveying the substrates 3050. The substrate cleaning device 300 also includes a misplacement unit 3 32, such as a vacuum chuck, for fixing the substrate 3 3 0. The clamping unit 332 has a ball screw 3 34 and a driving motor (not shown) for moving the clamping unit 332 between the conveyor belts 340b and 340c. For example, the substrate 330 can be sprayed with carbon dioxide snow flakes on the conveyor belt 3 40a, and then transported from the conveyor belt 340a to the conveyor belt 340b in sequence. The moving direction is as shown by the arrow, and then the clamp is used. After the unit 3 3 2 is clamped, it is sprayed with carbon dioxide snow. After the spraying is completed, it is transported to the next process by the conveyor 340c. The substrate washing device 300 further includes a carbon dioxide snow manufacturing unit Mo, which has a nozzle 3 2 4 for spraying a carbon dioxide snow gas stream on the substrate 330 fixed on the clamping unit 332. Please refer to FIG. 6 to FIG. 8, which are used to explain the method for cleaning the substrate according to the present invention, in which the same elements between different drawings will be given the same reference numerals. Referring to FIG. 6, a substrate 230 is fixed on a clamping unit 232, and a 3 inflammation holding unit 2 3 2 is disposed on a conveying unit 2 40 for a cleaning process to remove contaminants thereon. , Such as particles, metal films, oxide films or grease films. A carbon dioxide flake manufacturing unit 210 is activated to generate carbon dioxide flakes 2 and 8 and sprayed on the substrate 230. With reference to FIG. 7, the substrate 230 is moved to the / dedicated area by the conveying device 24o, or the substrate 230 is left to stand for a predetermined time. Referring to FIG. 8, then a carbon dioxide snow manufacturing unit 220 series
1234817 五、發明說明（7) 產生一高速之二氧化碳雪22 8氣流，喷向該基板23 0表面。由 於高速之二氧化碳雪2 2 8氣流之牵引力與二氧化碳雪砂之撞 擊力，將使該基板2 3 0表面之污染物，諸如微粒或薄膜，自 該基板2 3 0上被移除。 於此過程中，二氧化碳雪片2 1 8會吸收周界的熱量，使該 基板23 0表面溫度急速下降，進而使該基板230表面之薄膜 2 3 6冷凍硬化而產生裂縫。再者，吸收熱量之該二氧化碳雪 片218以及該二氧化碳雪2 28氣流，會昇華為氣體。於此一昇 華過程中，二氧化碳會快速膨脹而近似於爆炸之作用，可使 附著於基板2 3 0上之微粒與該基板23 0鬆脫。之後，帶有二氧 化石反谷2 2 8之南速氣流’會衝擊該基板2 3 0表面上之薄膜以及 微粒’而將其帶走，進而完成清洗之製程。 進一步舉例而言，如第9 a圖所示，其顯示一晶圓係已完成 一金屬噴鍍製程，且該二氧化碳之雪片2 1 8係懸浮於該晶圓 之一金屬薄膜層24 4上。一基材248之溫度係升高且維持在一 明顯高於室溫之溫度。該金屬薄膜層244具有最大之溫度梯 度而成為最明顯之熱衝擊區，而使該金屬薄膜層244易於冷 /東脆4 °如第9 b圖所示，一持續的高壓二氧化碳雪氣流2 2 8 $嘴洗於該金屬薄膜層244上，造成該金屬薄膜層2 44迅速脆 ^二並於一光阻層2 4 2上脫離，如此得以選擇性移除堆積於 °亥=阻層242上之該金屬薄膜層244而不損害一導體部246。 本發明之清洗基板之方法，於使用二氧化碳之雪氣流 二L 土 f之前，先使用二氧化碳之雪片噴灑於基板上，由於 一氧化妷雪片之溫度達一 5 (TC〜-80 °C，因此對該基板表面之1234817 V. Description of the invention (7) A high-speed air current of carbon dioxide snow 228 is generated and sprayed on the surface of the substrate 230. Due to the traction of the high-speed carbon dioxide snow 2 2 8 airflow and the impact of the carbon dioxide snow sand, the contaminants on the surface of the substrate 230, such as particles or films, are removed from the substrate 230. In this process, the carbon dioxide snow flakes 2 1 8 will absorb the heat from the periphery, which will cause the surface temperature of the substrate 230 to drop rapidly, and then the film 2 3 6 on the surface of the substrate 230 to be frozen and hardened to produce cracks. Furthermore, the carbon dioxide snow flakes 218 and the carbon dioxide snow 2 28 which absorb the heat, will rise into gas. During this sublimation process, carbon dioxide will rapidly expand and approximate the effect of an explosion, which can loosen the particles attached to the substrate 230 from the substrate 230. Afterwards, the south-velocity air current ′ with the anti-fossil anti-valley 2 2 8 impacts the thin film and particles on the surface of the substrate 2 30 and takes it away, thereby completing the cleaning process. For further example, as shown in FIG. 9a, it shows that a wafer system has completed a metal spraying process, and the carbon dioxide snow flake 2 1 8 is suspended on a metal thin film layer 24 4 of the wafer. The temperature of a substrate 248 rises and is maintained at a temperature significantly above room temperature. The metal thin film layer 244 has the largest temperature gradient and becomes the most obvious thermal shock zone, which makes the metal thin film layer 244 easily cold / easy to brittle 4 °. As shown in FIG. 9b, a continuous high-pressure carbon dioxide snow current 2 2 8 $ washes on the metal thin film layer 244, causing the metal thin film layer 2 44 to be rapidly brittle and detached on a photoresist layer 2 4 2, so that the selective deposition on the resist layer 242 can be removed. The metal thin film layer 244 does not damage a conductor portion 246. In the method for cleaning the substrate of the present invention, before using the carbon dioxide snow stream 2L soil f, spray the carbon dioxide snow flakes on the substrate. Since the temperature of the thorium oxide snow flakes reaches 5 (TC ~ -80 ° C, Of the substrate surface
第12頁 1234817 五、發明說明（8) 薄膜或油脂等具有冷凍之效果，其後再以二氧化碳雪氣流喷 洗，而得以提高該基板之薄膜去除效率。 另外，相較於先前技術，根據本發明之清洗基板之方法， 除了可增加薄膜去除及微粒去除效率之外，亦可節省喷洗之 時間及節省高純度二氧化碳之消耗量，降低整個裝置之成 本，並可適用於大平面之平板薄膜及微粒去除清洗製程。 雖然本發明已以前述實施例揭示，然其並非用以限定本發 明，任何熟習此技藝者，在不脫離本發明之精神和範圍内， 當可作各種之更動與修改。因此本發明之保護範圍當視後附 之申請專利範圍所界定者為準。Page 12 1234817 V. Description of the invention (8) The film or grease has the effect of freezing, and then it is sprayed with a stream of carbon dioxide snow to improve the film removal efficiency of the substrate. In addition, compared with the prior art, the method for cleaning a substrate according to the present invention can save the time of spray cleaning and the consumption of high-purity carbon dioxide, in addition to increasing the efficiency of film removal and particle removal, and reducing the cost of the entire device. , And can be applied to large flat plate film and particle removal and cleaning process. Although the present invention has been disclosed in the foregoing embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent application.
00852.ptd 第13頁 1234817 圖式簡單說明 【圖式簡單說明】 第1圖為先前技術之二氧化碳雪之製造裝置之結構示意 圖。 第2 a圖為先前技術之晶圓之剖面示意圖，其顯示已完成金 屬喷鍍製程。 第2 b圖為先前技術之晶圓之剖面示意圖，其顯示一金屬薄 膜層之剝離。 第3圖為根據本發明之一實施例之清洗基板之裝置之剖面 示意圖。 第4圖為根據本發明之另一實施例之清洗基板之裝置之剖 面示意圖。 第5圖為根據本發明之又一實施例之清洗基板之裝置之剖 面示意圖。 第6至8圖為根據本發明之清洗基板之方法之剖面示意圖。 第9 a圖為根據本發明之清洗基板之方法之晶圓之剖面示意 圖，其顯示二氧化碳雪片懸浮於該晶圓上。 第9 b圖為根據本發明之清洗基板之方法之晶圓之剖面示意 圖，其顯示一金屬薄膜層之剝離。 圖號說明： 2 二氧化碳雪之製造裝置 8 液態二氧化碳 10 儲罐 1200852.ptd Page 13 1234817 Brief description of the drawings [Simplified description of the drawings] Fig. 1 is a schematic diagram of the structure of the prior art carbon dioxide snow manufacturing device. Figure 2a is a schematic cross-sectional view of a wafer of the prior art, which shows that the metal spraying process has been completed. Figure 2b is a schematic cross-sectional view of a wafer of the prior art, showing the peeling of a thin metal film layer. FIG. 3 is a schematic cross-sectional view of an apparatus for cleaning a substrate according to an embodiment of the present invention. Fig. 4 is a schematic cross-sectional view of an apparatus for cleaning a substrate according to another embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of an apparatus for cleaning a substrate according to another embodiment of the present invention. 6 to 8 are schematic cross-sectional views of a method for cleaning a substrate according to the present invention. Fig. 9a is a schematic cross-sectional view of a wafer according to the method for cleaning a substrate according to the present invention, showing that carbon dioxide snow flakes are suspended on the wafer. Fig. 9b is a schematic cross-sectional view of a wafer according to the method for cleaning a substrate according to the present invention, which shows the peeling of a metal thin film layer. Drawing number description: 2 CO2 snow manufacturing equipment 8 Liquid carbon dioxide 10 Storage tank 12
00852.ptd 第14頁 123481700852.ptd Page 14 1234817
圖式簡單說明 14 控 制 閥 16 開 關 閥 18 々/Γ 即 流 喷 頭 裝 置 22 二 氧 化 碳 雪 30 基 板 40 二 氧 化 碳 雪 42 光 阻 層 44 金 屬 薄 膜 層 46 .導 體 部 48 基 材 100 清 洗 基 板 之 裝 置 110 二 氧 化 碳 雪 片之 製造單 元 112 二 氧 化 碳 雪 之製 造單元 114 喷 嘴 116 延 伸 管 120 二 氧 化 碳 雪 之製 造單元 124 喷 嘴 130 基 板 132 夾 持 ασ 早 元 200 清 洗 基 板 之 裝 置 210 二 氧 化 碳 雪 片之 製造單 元 212 二 氧 化 碳 雪 之製 造單元 214 喷 嘴 216 延 伸 管 220 二 氧 化 碳 雪 之製 造單元 224 喷 嘴 230 基 板 232 夾 持 單 元 240 輸 送 單 元 242 光 阻 層 244 金 屬 薄 膜 層 246 導 體 部 248 基 材 300 清 洗 基 板 之 裝 置 310 二 氧 化 碳 雪 片之 製造單 元 312 二 氧 化 碳 雪 之製 造單元 314 喷 嘴 316 延 伸 管 00852.ptd 第15頁 1234817Brief description of the drawings 14 Control valve 16 On-off valve 18 々 / Γ Instant nozzle device 22 Carbon dioxide snow 30 Substrate 40 Carbon dioxide snow 42 Photoresist layer 44 Metal film layer 46. Conductor part 48 Substrate 100 Device for cleaning substrate 110 Carbon dioxide snow flakes Manufacturing unit 112 CO2 snow manufacturing unit 114 Nozzle 116 Extension tube 120 CO2 snow manufacturing unit 124 Nozzle 130 Substrate 132 Holding ασ Early 200 Equipment for cleaning substrates 210 CO2 snow flake manufacturing unit 212 CO2 snow manufacturing unit 214 Nozzle 216 Extension tube 220 Carbon dioxide snow manufacturing unit 224 Nozzle 230 Substrate 232 Clamping unit 240 Conveying unit 242 Photoresist layer 244 Metal film layer 246 Conductor portion 248 Substrate 300 Device for cleaning substrate 310 Dioxygen Snow of producing a carbon sheet unit 312 two carbon oxide manufacturing unit 314. Snow nozzle extension tube 316 151234817 Page 00852.ptd
00852.ptd 第16頁00852.ptd Page 16
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