TWI233698B - Light emitting diode lamp and the fabrication method thereof - Google Patents

Light emitting diode lamp and the fabrication method thereof Download PDF

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TWI233698B
TWI233698B TW92124305A TW92124305A TWI233698B TW I233698 B TWI233698 B TW I233698B TW 92124305 A TW92124305 A TW 92124305A TW 92124305 A TW92124305 A TW 92124305A TW I233698 B TWI233698 B TW I233698B
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light
emitting diode
reflector
patent application
scope
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TW92124305A
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TW200511599A (en
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Hung-Tu Jau
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Hung-Tu Jau
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Abstract

The present invention relates to a light emitting diode lamp and the fabrication method thereof, which is composed of the lamp core of a plurality of light-emitting diode chips and a reflective mask; the reflective mask is composed of a parabolic bowl, and the reflective mirrors of the same number as the light-emitting diode chips, and the axis of the paraboloid for each reflective mirror is parallel to the axis of the reflective mask, and distributed in equal pitch with the axis of the reflective mask as the center; and, each light-emitting diode chip is corresponding to a reflective mirror, and located at the focus of the paraboloid of the reflective mirror, and in an angle of 0-85 degree to the axis of the reflective mask.

Description

1233698 五、發明說明(1) ' " 1 【發明所屬之技術領域】 本發明係有關一種發光二極體燈及其製造方法,尤指一 種以發光二極體配合反光罩以取得較佳聚光效果之設置。 【先前技術】 發光二極體具有壽命長、體積小、發熱量低、消耗功率 低、重量輕等優點,作為一種新型光源已在顯示、照明等 各個領域取得越來越廣泛之應用。在實際應用中,多數場 合下要求發光二極體燈具有較高之亮度和較小之光擴散角 (即在理想狀態下為平行光)。由於發光二極體晶片為面 發光源,其發光強度近似於餘弦分佈,且光擴散角度較 大,因此在實際使用時均採用各種方式封裝後方可使用。 第一圖所示者即為一種典型之圓形封裝發光二極體之單體 剖面圖,其具有正極引腳101及負極引腳102,並在其上端 含有一個凹形反射器1 〇 5,其内則設有發光二極體晶片 1 0 3 ’其外圍則以環氧樹脂封裝1 〇 4,其頂部形成一球面聚 光透鏡’該透鏡之曲率半徑為1>,透鏡焦點到球面頂點之 距離為f,為了使光線以較小之擴散角度發出,發光二極 體晶片1 0 3位於球面透鏡之焦點上,根據焦距公式:尤 = r*n2/(n2-nl),其中n2為封裝104材質(環氧^旨)之折射 率約為1 · 5 ’ η 1為空氣之折射率約為1,則f等於r之3倍, 因此從發光二極體晶片1 0 3所發出之小於3 〇度角之光才得 以聚光透鏡焦點之位置透過聚光,以接近〇 ^之擴散角發 出。在小於3度擴散角時,其光之利用率小於3〇% 。1233698 V. Description of the invention (1) 'Technical field to which the invention belongs] The present invention relates to a light-emitting diode lamp and a method for manufacturing the same, and particularly to a light-emitting diode and a reflector to achieve better convergence. Light effect settings. [Previous technology] Light-emitting diodes have the advantages of long life, small size, low heat generation, low power consumption, light weight, etc. As a new light source, they have been increasingly used in various fields such as display and lighting. In practical applications, light emitting diode lamps are required to have a higher brightness and a smaller light diffusion angle (that is, parallel light in an ideal state) in most fields. Since the light-emitting diode wafer is a surface light-emitting source, its luminous intensity approximates a cosine distribution and the light diffusion angle is relatively large. Therefore, in actual use, it is packaged in various ways before use. The first figure shows a single cross-sectional view of a typical circular package light-emitting diode, which has a positive lead 101 and a negative lead 102, and includes a concave reflector 105 at its upper end. Inside it is a light emitting diode wafer 103. 'The periphery is encapsulated with epoxy resin 104. A spherical condenser lens is formed on the top of the lens.' The radius of curvature of the lens is 1 > The distance is f. In order to make the light emit at a smaller diffusion angle, the light emitting diode wafer 103 is located on the focal point of the spherical lens. According to the focal length formula: especially = r * n2 / (n2-nl), where n2 is the package The refractive index of 104 material (epoxy ^ purpose) is about 1 · 5 'η 1 is the refractive index of air is about 1, then f is equal to 3 times r, so the light emitted from the light emitting diode wafer 103 is less than Only the light at an angle of 30 degrees can be transmitted through the condensing position of the focal point of the condenser lens and emitted at a diffusion angle close to 0 ^. When the diffusion angle is less than 3 degrees, the light utilization rate is less than 30%.

第4頁 1233698Page 4 1233698

、中國大陸發明專利公開說明書CN1 1 569〇8A公開了 一種發 光二極體,它利用全反射使發光二極體晶片發出之光近 1 00%得到利用,但其發出之不是平行光。4國專利第 5 0 0 1 6 0 9號也具有類似之缺點。 日本特許公報JP60063 970公開過一種具有發光二極體晶 片之平行發光器。由於發光二極體之支持台之影響,發光 二極體晶片之發光面並非正對反光罩,這使得大部分光線 都不能經反射面進行反射,從而發出平行之光利用率較 歐洲專利申請案第EP 0570987A1號公開了一種自車尾 燈’雖然其中LED半導體晶片位於反光罩之焦點上,但該 LED之發光面朝外,使得大部分光線都不能經反射面進行 反射,從而發出平行光之光利用率較低。而且在多個發光 之情況下,這些發光二極體不可能都位於反射曲面 之,、,、點上,延同樣也降低了平行光之光利用率。 【發明内容】 因此,為克服現有發光二極 時’光之利用率低、發光亮度 一種新封裝之發光二極體燈, 為平行光源或聚光光源,且具 用於汽車燈、投影機光源,照 本發明依據之原理是:由拋 出之光經該反射曲面反射後, 體燈在要求較小之擴散角 杈小之缺點,本發明提供了 使封裝後之發光二極體可作 有較高之光亮度,可廣泛應 明光源等各領域。 物面形之反射曲面之焦點發 以平行於該曲面軸線之方向 1233698 五、發明說明(3) 出射。將發光二極體晶片置於對應之曲面反光鏡之焦點上 ,並使發光二極體晶片之發光面對著反光鏡,且與反光罩 之軸線成平行,則由晶片發出之光除少部分從反光鏡之開 口處直接逸出外’其餘之光經反光鏡反射後平行於該曲面 之軸線。從而使其發光角接近於〇度,光之利用率可獲得 有效提高。 ^由於發光二極體晶片不是點光源,而是面發光源,為提 兩反光罩之利用率’可將多個發光二極體沿正多邊形排 列’發光面向外’按此方式構成之燈芯之發光角為3 6 〇度 ’在不增加燈具體積之情況下,提高了燈具之亮度。將複 數個發光二極體沿正多邊形排列所構成之燈芯之體積較大 ’已不可視為點光源。因此將該曲面形反光罩分為多個曲 面,使每個發光二極體晶片對應一個曲面之焦點。 本發明還提供了一種製造上述發光二極體燈之對應方 法,首先製造帶有反射曲面之反光罩;然後製造帶有多個 發光二極體晶片之燈芯,使該發光二極體晶片之發光面可 與該反光罩之軸線成平行;最後將該燈芯放入該反光罩内 ’調整該燈芯使得該發光二極體晶片位於該反射曲面之焦 點處。 【實施方式】 一、反光罩2 02之製備: 請參閱第二圖,反光罩2 0係為一碗形體,由四個相同形 狀之反光鏡拼組而成’其内側係成型為拋物面形之反射曲 面201 ’拋物線方程為y2 = 8x,高度為8mm。各反光鏡拋物面2. Chinese mainland invention patent publication specification CN1 1 569〇8A discloses a light emitting diode, which uses total reflection to make use of nearly 100% of the light emitted by the light emitting diode wafer, but it does not emit parallel light. The four-country patent No. 501,609 has similar disadvantages. Japanese Patent Publication JP60063 970 discloses a parallel light emitter having a light emitting diode wafer. Due to the influence of the support of the light-emitting diode, the light-emitting surface of the light-emitting diode wafer is not directly facing the reflector, which makes most of the light cannot be reflected by the reflective surface, so the parallel light utilization ratio is higher than that of the European patent EP 0570987A1 discloses a self-car rear light 'Although the LED semiconductor chip is located at the focal point of the reflector, the light-emitting surface of the LED faces outward, so that most of the light cannot be reflected by the reflective surface, thereby emitting parallel light Low utilization. Moreover, in the case of multiple light emission, these light-emitting diodes cannot all be located on the reflective curved surface. The extension also reduces the light utilization efficiency of parallel light. [Summary of the Invention] Therefore, in order to overcome the existing light emitting diodes' low utilization of light and luminous brightness, a new packaged light emitting diode lamp is a parallel light source or a spotlight source, and is used for automotive lights and projector light sources. According to the principle on which the present invention is based, after the emitted light is reflected by the reflective curved surface, the disadvantage of the body lamp requiring a small diffusion angle is that the invention provides a packaged light emitting diode that can be used as The high brightness can be widely used in various fields such as light sources. The focal point of the reflecting surface of the object shape is emitted in a direction parallel to the axis of the curved surface. 1233698 V. Description of the invention (3) Exit. Place the light-emitting diode wafer on the focal point of the corresponding curved reflector, and make the light-emitting diode wafer face the reflector and be parallel to the axis of the reflector, then the light emitted by the wafer is reduced. The light that escapes directly from the opening of the reflector is reflected by the reflector and parallel to the axis of the curved surface. As a result, its luminous angle is close to 0 degree, and the utilization rate of light can be effectively improved. ^ Because the light emitting diode chip is not a point light source, but a surface light source, in order to improve the utilization of the two reflectors, multiple light emitting diodes can be arranged along a regular polygon, and the light emitting surface is formed in this way. The luminous angle is 360 degrees, which increases the brightness of the lamp without increasing the volume of the lamp. The large volume of a wick formed by arranging a plurality of light-emitting diodes along a regular polygon is no longer regarded as a point light source. Therefore, the curved reflector is divided into a plurality of curved surfaces, so that each light emitting diode chip corresponds to the focal point of a curved surface. The invention also provides a corresponding method for manufacturing the above-mentioned light-emitting diode lamp. First, a reflector with a reflective curved surface is manufactured; then, a wick with a plurality of light-emitting diode wafers is manufactured to make the light-emitting diode wafer emit light. The surface can be parallel to the axis of the reflector; finally, the wick is placed in the reflector to adjust the wick so that the light emitting diode chip is located at the focal point of the reflective curved surface. [Embodiment] 1. Preparation of reflector 2 02: Please refer to the second figure. The reflector 20 is a bowl-shaped body, which is formed by combining four reflectors of the same shape. The reflection surface 201 'parabolic equation is y2 = 8x, and the height is 8mm. Parabolic surface of each mirror

第6頁 1233698 五、發明說明(4) 之個別轴線與反光罩20之整體軸線I係相距〇· 5mffl,並呈對 稱分佈’在反光罩20之底部以反光罩軸線I為中心開有一 直徑為2mm之孔洞2 02。 二、燈芯之製備: 請參閱第二及第二圖’將四個1 X 6 mm且厚度為〇·2 mm之 單面印刷電路板2 2 1以樹脂膠分別粘在1 X 1 mm且高度為工〇 mm之銅質四角柱2 2 2中間部位之四個側面上,構成燈芯基 體22。四角柱222之上下兩端各露出2 mm形成燈芯基體22之 導電層。將四牧0.3x 0.3mm之發光二極體晶片21用銀衆分 別固ό又於四角柱2 2 2上知之導電層之四個側面距頂端1旧m 處。使發光二極體晶片21之負極與該導電層形成電連接, 並使發光二極體晶片21之發光面211正對反光罩2〇之反身于 曲面201,且與該反光罩軸線I之成平行(即角α=〇。)。然名 將該發光二極體晶片21之正極用金線23連接於組成燈芯基 體22之電路板221上,此即完成燈芯之製作。 將燈芯穿設反光罩2 0底部之孔洞2 0 2,置於反光罩2 〇内 ’並調整燈芯之位置使每個發光二極體晶片2 1都處於與其 對應之拋物面形反光鏡之焦點上。 而在該反光罩20之反射曲面201所形成之凹入空間,可 選擇性地再增加一步驟,即以透明樹脂封填該空間,以增 加其防塵防水能力。 以上製成之發光二極體燈在小於3度擴散角之情況下, 其效率可達80 %以上。Page 61233698 V. Description of the invention (4) The individual axis is separated from the overall axis I of the reflector 20 by 0.5 mffl and is symmetrically distributed at the bottom of the reflector 20 with the diameter of the reflector axis I as a center. It is a hole 2 02 of 2mm. 2. Preparation of the wick: Please refer to the second and the second pictures. 'Attach four single-sided printed circuit boards 2 1 of 1 X 6 mm and a thickness of 0.2 mm to 2 1 1 with resin glue and height The wick base body 22 is formed on the four sides of the middle part of the copper quadrangular pillar 2 2 2 with a diameter of 0 mm. The upper and lower ends of the quadrangular pillar 222 are exposed at 2 mm each to form a conductive layer of the wick base 22. The light emitting diode wafer 21 of Shimu 0.3x 0.3mm was fixed with silver, and the four sides of the conductive layer known on the quadrangular pillar 2 2 2 were 1 m away from the top. The negative electrode of the light-emitting diode wafer 21 is electrically connected to the conductive layer, and the light-emitting surface 211 of the light-emitting diode wafer 21 is opposite to the reflector 20 and reflexed on the curved surface 201, and is formed with the reflector axis I. Parallel (ie angle α = 0.). The positive electrode of the light-emitting diode wafer 21 is connected to the circuit board 221 constituting the wick base 22 with a gold wire 23, and the production of the wick is completed. Put the wick through the hole 2 0 2 at the bottom of the reflector 20 and place it inside the reflector 2 0 and adjust the position of the wick so that each light-emitting diode wafer 21 is at the focal point of its corresponding parabolic reflector . In the recessed space formed by the reflective curved surface 201 of the reflector 20, an additional step can be optionally added, that is, the space is sealed with a transparent resin to increase its dustproof and waterproof capabilities. The light emitting diode lamp made above can achieve an efficiency of more than 80% at a diffusion angle of less than 3 degrees.

第7頁 1233698 圖式簡單說明 第一圖:習知圓形封裝發光二極體之剖視圖。 第二圖:本發明之一較佳實施例之縱向剖視圖; 第三圖··本發明之一較佳實施例之俯視圖。 片 晶 體器 #,]腳極射 Μ 引二反 U 極光形 ί份正發凹 件部——一 元知010305 [^0111 10 2...負極引腳 104…封裝 本發明部份: 20···反光罩 2 0 2…孔洞 2 11...發光面 2 21...電路板 2 3…金線 2 0 1…反射曲面 2 1...發光二極體晶片 2 2…燈芯基體 222.··四角柱Page 7 1233698 Brief description of the drawing Figure 1: A cross-sectional view of a conventional circular package light emitting diode. FIG. 2: A longitudinal sectional view of a preferred embodiment of the present invention; FIG. 3 • A plan view of a preferred embodiment of the present invention.片 晶 器 #,] Foot pole shot M Inverted U Aurora shape Positive hair recessed part—one element 010305 [^ 0111 10 2 ... Negative lead 104 ... Encapsulation part of the invention: 20 ·· · Reflector 2 0 2 ... hole 2 11 ... light emitting surface 2 21 ... circuit board 2 3 ... gold wire 2 0 1 ... reflective curved surface 2 1 ... light emitting diode wafer 2 2 ... wick base 222. ·· Four corner posts

Claims (1)

1233698 六、申請專利範圍 1 · 一種發光二極體燈,係包括一燈芯及一反光罩,該燈 芯上設有發光二極體晶片,其位於該反光罩之反射曲面之 焦點上,且該發光二極體晶片之發光面係正對反光罩之反 射曲面,且與反光罩之縱向軸線成〇到8 5度夾角。 2 ·如申請專利範圍第1項所述之發光二極體燈,其中該 反光罩係由複數個反光鏡所拼組而成’該燈思具有多個發 光二極體晶片,反光鏡數係與發光二極體晶片數相同,每 一發光二極體晶片之發光面係分別位於與其對應之反光鏡 之焦點上。 3 ·如申請專利範圍第2項所述之發光二極體燈,其中該 每一反光鏡之個別轴線係與反光罩之整體轴線平行’且以 反光罩之轴線中心等距離排列。 4·如申請專利範圍第2或3項所述之發光二極體燈,其中 該發光二極體晶片和該反光鏡之數里為四 5 ·如申請專利範圍第1項所述之發光二極體燈,其中該 反射曲面為拋物面。 6 ·如申請專利範圍第1項所述之發光一極體燈,其中該 燈芯係由一多邊柱形之燈芯基體和複數個發光二極體晶片 所構成,每一發光二極體晶片位於該燈芯基體之一個侧 面,讀燈芯基體係由一角柱及貼合於側面之複數個電路板 戶斤組成。 7·如申請專利範圍第1項所述之發光厂極體燈,其中該 反光罩之凹入空間可再以透明樹脂進灯封裝。 8 ·如申請專利範圍第1項所述之發光二極體燈,其中該1233698 6. Scope of patent application 1. A light-emitting diode lamp includes a wick and a reflector, and the wick is provided with a light-emitting diode chip, which is located at the focal point of the reflective curved surface of the reflector, and the light is emitted. The light emitting surface of the diode wafer is directly facing the reflective curved surface of the reflector, and forms an angle of 0 to 85 degrees with the longitudinal axis of the reflector. 2 · The light-emitting diode lamp as described in item 1 of the scope of the patent application, wherein the reflector is composed of a plurality of reflectors. 'The lamp has multiple light-emitting diode wafers, and the number of reflectors is With the same number of light-emitting diode wafers, the light-emitting surfaces of each light-emitting diode wafer are respectively located on the focal points of the corresponding reflectors. 3. The light-emitting diode lamp as described in item 2 of the scope of patent application, wherein the individual axis of each reflector is parallel to the overall axis of the reflector 'and is arranged at equal distances from the center of the axis of the reflector. 4. The light-emitting diode lamp as described in item 2 or 3 of the scope of patent application, wherein the number of the light-emitting diode wafer and the reflector is four. 5 · The light-emitting diode as described in item 1 of the scope of patent application A polar body lamp, wherein the reflective curved surface is a paraboloid. 6 · The light-emitting monopolar lamp described in item 1 of the scope of the patent application, wherein the wick is composed of a polygonal column-shaped wick base and a plurality of light-emitting diode wafers, and each light-emitting diode wafer is located at On one side of the wick base body, the reading wick base system is composed of a corner post and a plurality of circuit board households attached to the side. 7. The light-emitting factory polar body lamp as described in item 1 of the scope of patent application, wherein the recessed space of the reflector can be encapsulated with a transparent resin. 8 · The light-emitting diode lamp as described in item 1 of the scope of patent application, wherein 第9貢9th Tribute 1233698 六、申請專利範圍 以 發光二極體晶片之發光面與反光罩之縱向軸線之夾角 度角為最佳。 9 · 一種發光二極體燈之製造方法,包括下列步驟· (1) 製造帶有反射曲面之反光罩; &光 (2) 製造帶有複數個發光二極體晶片之燈怒’使該發 二極體晶片之發光面與該反光罩之軸線成0到8 5度爽角步 (3 )將該燈芯放入該反光罩内,調整該燈芯使得該發〆 二極體晶片位於該反射曲面之焦點處。 I 0 ·如申請專利範圍第9項所述之發光二極體燈之製造方 法,其更進一步包括一最後之少驟: 以透明樹脂封裝該反光罩之凹入空間。 II ·如申請專利範圍第9項所述之發光二極體燈之製造方 法,其中該反射曲面為拋物面。 1 2 ·如申請專利範圍第9項所述之發光二極體燈之製造方 法,其中該反光罩由複數個反光鏡所組成,該反光鏡之個 別軸線係與反光罩之整體軸線中行,且以反光罩之軸線為 中心專距離均勻排列,並使每一發光二極體晶片之發光面 分別位於各個反光鏡之焦點上。 1 3 ·如申請專利範圍第丨2項所述之發光二極體燈之製造 方法’其中該發光二極體晶片及該反光鏡之數量為四。 1 4·如申請專利範圍第9項所述之發光二極體燈之製造方 法,其中該發光二極體晶片之發光面與反光罩之縱向轴 之夾角係以3 0度角為最佳。 '1233698 6. Scope of patent application The angle between the light emitting surface of the light emitting diode wafer and the longitudinal axis of the reflector is the best. 9 · A method for manufacturing a light emitting diode lamp, including the following steps: (1) manufacturing a reflector with a reflective curved surface; & light (2) manufacturing a lamp with a plurality of light emitting diode wafers The light emitting surface of the hair-emitting diode wafer is 0 to 85 at a 5 ° angle with the axis of the reflector (3) Place the wick into the reflector, and adjust the light-wick so that the hair-emitting diode wafer is located on the reflection The focal point of the surface. I 0 · The method for manufacturing a light-emitting diode lamp as described in item 9 of the scope of the patent application, further comprising a final step: encapsulating the concave space of the reflector with a transparent resin. II. The method of manufacturing a light-emitting diode lamp as described in item 9 of the scope of the patent application, wherein the reflective curved surface is a paraboloid. 1 2 · The method for manufacturing a light-emitting diode lamp as described in item 9 of the scope of the patent application, wherein the reflector is composed of a plurality of reflectors, and individual axes of the reflectors are aligned with the overall axis of the reflector, and With the axis of the reflector as the center, the light emitting surfaces of each light-emitting diode wafer are arranged at the focal points of the reflectors. 1 3 · The manufacturing method of the light-emitting diode lamp described in item 丨 2 of the scope of the patent application, wherein the number of the light-emitting diode wafer and the reflector is four. 14. The method for manufacturing a light-emitting diode lamp as described in item 9 of the scope of the patent application, wherein the angle between the light-emitting surface of the light-emitting diode wafer and the longitudinal axis of the reflector is preferably an angle of 30 degrees. ' 第10頁Page 10
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