TWI228837B - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
TWI228837B
TWI228837B TW92128458A TW92128458A TWI228837B TW I228837 B TWI228837 B TW I228837B TW 92128458 A TW92128458 A TW 92128458A TW 92128458 A TW92128458 A TW 92128458A TW I228837 B TWI228837 B TW I228837B
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Taiwan
Prior art keywords
light
blue
red
fluorescent layer
semiconductor
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TW92128458A
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Chinese (zh)
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TW200514275A (en
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Tz-Chi Jeng
Rung-Bin Jeng
Kuen-Juei Li
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Tz-Chi Jeng
Rung-Bin Jeng
Kuen-Juei Li
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Publication of TW200514275A publication Critical patent/TW200514275A/en

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Abstract

A light emitting device is characterized in including: at least one blue light semiconductor as a blue light emitting light source; at least one red light semiconductor as a red light emitting light source; and a fluorescent layer formed by uniformly mixing a fluorescent powder with a transparent glue. The fluorescent layer can be adhered to the blue light semiconductor and the red light semiconductor. The blue light and the red light are mixed, the blue light and the red light have different wavelengths and are emitted from the blue light semiconductor and the red light semiconductor respectively, the fluorescent layer is mainly excited by the blue light, and emits a light with a wavelength different from the wavelengths of the blue light and the red light.

Description

12288371228837

發明 本發 二種顏色 螢光層, 先前 按習 業股份有 「發光裝 源之藍光 生不同波 被激發的 純0 所屬之技術領域: I 供一種發光裝置,特指-種以Μ、紅光為 由罄丄一個以上光半導體用以激發綠色或黃色的 ::光層發出波長與藍、紅光二波長不同的光。 ?真之發光裝置,典型之範例日本日亞化學工 =司所申請之台灣公告號第3 8 3 5 〇 8號 嘴”、、員不^置」專利案,該案僅利用單一藍色光 蛉體,藉發射出之藍光以激發黃色螢光層,產 =白光顯現,由於僅具單一波長的光與部份未 上光混合,故其演色性差,即;白色光失真不 w田° ^公告遽第3 8 5 0 6 3號新白光LED專利案,它 了單一的_紫外光半導體為光源,用以激發紅、綠、藍 、> G B )二色螢光粉組成的螢光層,加以產生白色 光。=其係利用單—的紫外光源,料光會對目前所泛 ?之%:氧树脂結構造成破壞,會使白色光產生光衰減之問 題’尤有甚者’利用單一之光半導體為光源,#激發出之 白光亮度不強。 居於以上’如何開創出一種具有高亮度及演色性佳的 發光裝置’乃是本案鑽研之課題。 發明内容: 緣是;本發明乃在提供一種發光裝置,藉著藍光及紅 光的二個以上的半導體為二種顏色光源,用以激發綠色或According to the invention, the two-color fluorescent layer was previously described as "pure light with blue light generated by different sources, which is excited by different wavelengths. The technical field belongs to: I provides a light-emitting device, specifically-a kind of M, red light Because one or more optical semiconductors are used to excite green or yellow :: the light layer emits light with a wavelength different from the two wavelengths of blue and red.? A true light emitting device, a typical example. Taiwan Announcement No. 3 8 3 5 08 No. "No., No. No." patent case, which only uses a single blue light carcass, and uses the emitted blue light to excite the yellow fluorescent layer. Production = white light manifestation Because only a single wavelength of light is mixed with some unglazed, its color rendering is poor, that is, white light is not distorted. ^ Announcement No. 3 8 5 0 6 new white LED patent case, it has a single The UV semiconductor is used as a light source to excite a fluorescent layer composed of red, green, blue, > GB) two-color phosphors to generate white light. = It uses a single-type ultraviolet light source, the material light will cause the current flooding%: the damage of the oxygen resin structure, will cause the white light to have the problem of light attenuation. #Excitation of white light is not strong. Based on the above, how to create a light-emitting device with high brightness and color rendering is the subject studied in this case. Summary of the Invention: The reason is that the present invention is to provide a light emitting device, which uses two or more semiconductors of blue light and red light as two color light sources to excite green or

1228837 五、發明說明(2) 黃色的螢光層,以達產生 種 index)佳及效率高的白色光~^(c〇l〇r rendering 首先,請責審查委員失3円、先的顏色顯現者 發光裝置,其特徵乃包含;閱圖一,本發明係在提供 至少一個以上的藍光半導 、 至少一個以上的紅色半辦 做為藍光發光的光源; 螢光層3 0,係由螢光粉加^ ^做為紅光發光的光源; 光層3 0可膠合覆接於:^ 、明膠均勻混合而成,該螢 上,藍光半導體1〇及:光及紅光半導體20 源所發出不同波長的誌 _ 2 〇等二種顏色的二光 激發營光層30,並:營==:其中主要以藍光來 等波長不同的光。 θ30^出波長與藍光及紅光 依據前述之主要牲 藍、紅弁-本、塔〜& ' ’ /、中螢光層3 0中的蒂氺伞v址 孤、、工光一先源所激發的光盥該 入的螢先粉被 人眼定義為白光或趨於白色:;。、’ λ此口出的光,可被 依據前述之主要牿 光激發的波長介於5 〇 ^ 光層3 0中的螢光粉受 依攄兑、+、《V + U 0〜5 8 5 nm間。 依據别述之主要特徵,苴 光其波長約為360’、麻先+ ^體10所發的藍 出红氺、* p ^ 8 0 nm間’紅光半導, 出、.工以為5 8 5〜78_。 …體20所發 依據别述之主要特徵,豆 為鋁石榴石系(Ytt ,、 θ 3 〇中的螢光粉可 / 〇mn 4 、 11 Aluminium Garnet ) ^ :攄Λ蝴酸鹽11 (Bx0,)材質構成。 鹽類 依據則述之主要特徵,其中藍光半導體1〇及紅光半 第6頁 1228837 五、發明說明(3) 導體2 〇可連接於一 中可填充 依據 導體2 0 螢光層3 可將螢光 依據 材質可由 螢光粉由 Ce3+ ); 螢光粉由 螢光粉由 如圖 裝置,其 至少一個 至少一個 螢光層3 3 0 /係 透明膠層 覆,其中 出波長與 0透出, 出,以被 實施 勞光層3 〇 前述之主要 可連接於主 0填充於凹 層3 0及主 前述之主要 下列組合物 飾元素致活 銪元素致活 铽(Terbium 三所示,係 特徵包含: 以上的藍光 以上的紅光 〇 /係由螢 將藍光半導 7 0將螢光 藍光用以激 藍光、紅光 使該不同的 定義為另一 方式: 反射蓋5 0的凹槽5 2中,凹槽 〇 特徵,其中藍光半導體1 〇及紅 導線架6 0上方預設的凹槽6 2 槽6 2中,一燈泡型的透明樹脂 導線架6 0上端包覆一體包覆。 特徵,其中螢光層3〇中的螢光 之一種或二種或三種的組合來選 且含Y與A1的鋁石榴石系(YAG : 的石摘系(YAG : EU2+/3+ ); )元素致活的石榴系(YAG : Tb3+ 本案另一實施例,乃在提供一種 半導體1 0做為藍光發光的光源 半導體2 0做為紅光發光的光源 光粉加上透明膠均勻混合,該螢 體1 0封裝包覆; 層30>及紅色半導體2〇封裝 發螢光層3〇,,使螢光層3〇 等二波長不同的光,並由透明膠 光波長得與藍、紅光的波長相混 種顏色的光顯現。 光半 中, 6 4 粉的 用: 發光 光層 包 /發 層7 合透1228837 V. Description of the invention (2) Yellow fluorescent layer to produce white light with good index and high efficiency ~ ^ (c〇l〇r rendering First, please blame the reviewer for the 3rd and the first color appearance The light emitting device includes the following features. As shown in FIG. 1, the present invention provides at least one blue light semiconducting device and at least one red half light source as a blue light emitting light source. The fluorescent layer 30 is made of fluorescent light. The powder plus ^ ^ is used as a red light source; the light layer 30 can be glued on: ^, and gelatin is evenly mixed. On this screen, blue light semiconductors 10 and 20 are different from light and red light semiconductors. The wavelength of the light _ 2 〇 and two colors of two colors excite the camping light layer 30, and: camp ==: which mainly uses blue light to wait for different wavelengths of light. Θ30 ^ The output wavelength and blue and red light are based on the aforementioned main factors. Blue, red 弁 -ben, tower ~ &'; /, / 氺 umbrella in the middle fluorescent layer 30, address, and the light source excited by the industrial light source should be defined by the human eye It is white light or tends to be white:;, 'λ The light from this mouth can be stimulated by the main chiral light according to the foregoing The phosphors with a wavelength between 50 and 30 in the light layer 30 are affected by 摅, +, and V + U 0 ~ 5 8 5 nm. According to the main characteristics of other light, the wavelength of 苴 is about 360 ' , Ma Xian + ^ Blue 10 issued by the body 10, * p ^ 8 0 nm 'red light semiconducting, output, .. I think 5 8 5 ~ 78_.… Body 20 issued according to the main characteristics of the other features Beans are aluminum garnet series (Ytt, θ 3 〇 Fluoro powder / 0 mn 4, 11 Aluminium Garnet) ^: 摅 Λ 酸盐 蝶 酸盐 11 (Bx0,) material composition. Salt basis is described Main features, among which blue light semiconductor 10 and red light half Page 1228837 V. Description of the invention (3) Conductor 2 0 can be connected to one can be filled according to the conductor 2 0 Fluorescent layer 3 The fluorescent light can be fluorescent depending on the material The powder is made of Ce3 +); the fluorescent powder is made of fluorescent powder by the device shown in the figure, at least one of which is at least one fluorescent layer 3 3 0 / is a transparent adhesive layer, in which the output wavelength and 0 are transmitted out, to be implemented Layer 3 〇 The aforementioned main can be connected to the main 0 and filled in the recessed layer 30 and the main following composition: As shown in um three, the system features include: The above blue light is more than the red light. 0 / The blue light is semi-conductive by the fluorescent light. 70 The fluorescent blue light is used to stimulate the blue light. The red light makes the different definition as another way: Reflective cover. In the groove 5 2 of 50, the groove 〇 features, among which the blue light semiconductor 10 and the red lead frame 6 0 are preset in the groove 6 2 in the groove 6 2, a bulb-shaped transparent resin lead frame 60 0 upper end package Covered and covered. Features, in which one or a combination of two or three kinds of fluorescent light in the fluorescent layer 30 is selected and contains an aluminum garnet series of Y and A1 (YAG: Stone Extraction System (YAG: EU2 + / 3 +);) Element-activated pomegranate series (YAG: Tb3 +) Another embodiment of this case is to provide a semiconductor 1 0 as a light source for blue light emission, and a semiconductor 20 as a light source for red light emission, plus a transparent glue, which is uniformly mixed. The body 10 is packaged and encapsulated; layer 30> and the red semiconductor 20 are packaged with a fluorescent layer 30, so that the fluorescent layer 30 has two different wavelengths of light, and the wavelength of the transparent glue is different from that of blue and red light. Light of mixed wavelengths appears in light. In the light half, 6 4 powder use: luminescent layer cover / hair layer 7 through

1228837 五、發明說明(4) (1).如圖一所示,藍光 連接於一反射蓋5 2 〇正、負極的導 導電架4 2 、4 4 1 2、1 4分別連 左、右導電架4 2 迴路。螢光層3 0 YAG )或矽酸鹽類 質所構成,更進一1228837 V. Description of the invention (4) (1). As shown in Figure 1, the blue light is connected to a reflective cover 5 2 0. The positive and negative conductive frames 4 2, 4 4 1 2, 1 4 are connected to the left and right respectively. Rack 4 2 circuits. Fluorescent layer 3 0 YAG) or silicate

Ce3+、YAG : 或者為這些 5 0 0 〜5 黃色之間的 分別發光時 ,其中藍光 間,紅光半 5 8 5 〜7 光(B、R (如圖一所 螢光層3 〇 (B )、紅 ),該不同 同的光(即 合,被人眼 EU2+/3+ 材質的 8 5 nm 顏色。 ’乃產 R其光 導體2 8 0 nm )相互 示), 中的綠 光(R〕 光的波 、綠光G 視覺時 半導體1 〇及紅光半導體2 〇分別 〇之凹槽52中,其中紅光半導體 電接腳2 2、2 4分別連接於二個 上’藍光半導體1 〇之導電接腳 接於二個導電架42、44上,二 、4 4之間係為絕緣,以形成電氣 中的螢光粉係由鋁石榴石系( (SmOn4_ )或硼酸鹽類(Bx〇y3-)材 步而言,螢光粉可選擇YAG : 、YAG : Tb3+其中之一種或二種, 組合。該螢光層30之光波長為 間’其係綠色或黃色,或綠色與 藍光半導體1 〇及紅光半導體2 〇 生藍色及紅色的光源,如圖四所示 源之波長介於3 6 〇〜4 8 〇nm之 〇所發出紅光R其光源之波長介於 之間,當這二個各為獨立的藍、紅 >'心合向外發出並經過反射蓋5 〇 其内壁面5 3將光反射出,乃激發 色或黃色勞光粉,乃產生異於藍光 兩者波長不同的光(即綠光G 長介於5 1 0〜5 7 〇nm間,該不 )與藍、紅光(B、r )波長相混合 ’乃被疋義為白光W (如圖四所示Ce3 +, YAG: Or when these 5 0 0 ~ 5 yellow light, respectively, among blue light, red light half 5 8 5 ~ 7 light (B, R (as shown in the fluorescent layer 3 〇 (B) , Red), the different light (ie, the 8 5 nm color of the EU2 + / 3 + material of the human eye. 'Is produced by R and its photoconductor 2 8 0 nm) are shown to each other), the green light (R) Waves of light, green light G are visible in the grooves 52 of the semiconductor 1 〇 and the red light semiconductor 2 〇 respectively, wherein the red light semiconductor electrical pins 2 2 and 24 are connected to the two blue light semiconductor 1 〇 The conductive pins are connected to the two conductive frames 42 and 44. The two and four are insulated to form a fluorescent powder in the electrical system. The aluminum garnet (SmOn4_) or borate (Bx〇y3) -) In terms of material steps, phosphors can choose one or two of YAG :, YAG: Tb3 +, or a combination of them. The wavelength of the light of the phosphor layer 30 is between 'green or yellow', or green and blue semiconductor 1 〇 and red light semiconductors 〇 blue and red light sources, as shown in Figure 4, the source wavelength is between 3 6 0 ~ 4 8 0 nm, the red light R light source The wavelengths are in between. When the two are independent blue and red, they are emitted outward and pass through the reflection cover 50, and the inner wall surface 5 3 reflects the light, which is an excited color or a yellow labor powder. It produces light with different wavelengths than blue light (that is, the green light G has a length between 5 1 0 and 5 7 nm, and it does not mix with the blue and red light (B, r) wavelengths), which is defined as White light W (as shown in Figure 4

第8頁 1228837 五、發明說明(5) )。由於該 (B、R )的 此具有亮度 螢光層3 〇 度及演色性 (2) ·如圖三所示 立的將藍光 充包覆於螢 藍光半導體 3 0 /使螢 的光,與藍 光相混合, 層7 0顯現 (3) ·本案輸入不 藍、紅半導 光的波長, 的波長;營 5 7 0 nm, 時’螢光層 光(如橘黃 故改變營光 長,可決定 (4) ·如圖二所示 線架6 〇包 白光W的 光源發射 高、效率 中的螢光 更佳的白 係為本案 半導體1 光層3 0 1 0發出 光層3 0 、紅光二 而被人視 並發出。 同高、低 體1 0、 例如紅光 光層3 0 螢光粉被 3 0會發 光)。 層3 0的 螢光層3 ,本案透 覆,其中 產生係由二個獨立的 來激發綠色或黃色的 南之特性,藉此可有 粉’以達三個光波長 光W顯現者。 另一實施,螢光層3 透明膠 體2 0 ,藍光 發出另一波長與藍 波長相混合,使三 顏色的 〇封裝包覆, 及紅光半導 藍光之光源時 光 覺定義為一種 藍、紅光 螢光層,因 效率的激發 混合成高亮 0 >得以獨 層7 0再填 上,藉此, 激發螢光層 、紅光不同 波長不同的 光從透明膠 值不同之電流,可控制並改變 2 0之發光強度以及影響藍、紅 R可被改變為橘紅色至紅色之間 其螢光粉的光波長倘為 藍、紅光(B、R )二光源激發 出另一種約5 9 0 nm波長顏色的 光波長與控制藍、紅色光源之波 0最後發出的光顏色。 明樹脂6 4將螢光層3 0及主導 藍、紅光半導體10、20之接Page 8 1228837 V. Description of the invention (5)). Since the (B, R) has a fluorescent layer of 30 degrees and color rendering (2), as shown in FIG. 3, the blue light is filled and coated on the fluorescent blue light semiconductor 3 0 / the fluorescent light and the blue light When mixed, the layer 70 appears (3) · In this case, the wavelength of the non-blue and red semi-conductive light is input; the wavelength is 570 nm, and the fluorescence layer light (such as orange, which changes the length of the camp light, can be determined ( 4) As shown in Figure 2, the white frame of the wire frame 6 〇 packaged with white light W has high emission and better fluorescence in the white system. This is the semiconductor 1 light layer 3 0 1 0 emitting light layer 3 0 and red light. Seen and emitted by people. The same height, low body 10, such as red light layer 30 phosphor powder 30 will emit light). The fluorescent layer 3 of the layer 30 is transparent in this case, and the generation is caused by two independent ones to excite the characteristics of green or yellow south, whereby there can be powder 'to reach three wavelengths of light. In another implementation, the fluorescent layer 3 is a transparent colloid 20, and the blue light emits another wavelength and is mixed with the blue wavelength, so that the three-colored 0 package and the light source of the red semi-conductive blue light are defined as a kind of blue and red light. The fluorescent layer is mixed to highlight 0 due to the excitation of the efficiency. The single layer 70 can be refilled, thereby exciting the fluorescent layer and red light with different wavelengths and different currents from the transparent glue. Changing the luminous intensity of 2 0 and affecting the blue and red R can be changed to the wavelength of the fluorescent powder between orange red and red. If the blue and red (B, R) two light sources excite another about 5 9 0 The wavelength of light with a wavelength of nm wavelength and the color of the light emitted by wave 0 of the blue and red light source. Bright resin 6 4 connects the fluorescent layer 30 and the dominant blue and red semiconductors 10 and 20.

1228837 五、發明說明(6) 腳2 2、1 2、1 4分別連接於左、右導線架6 6、 6 8以形成電氣迴路。 螢光層3 0受藍、紅光源之激發,乃發出另一種光波 長與藍、紅光波長不同的光從透明樹脂6 4發射出。 綜上,本案藉二不同波長且主動發光的光源,去激發 螢光層中的螢光粉,進一步產生與藍、紅不同波長的光, 這樣的光具有極佳之演色性及亮度的增進,已具備發明要 件,申請人爰依法提呈申請。1228837 V. Description of the invention (6) Feet 2 2, 1 2, 1 4 are connected to the left and right lead frames 6 6 and 6 8 respectively to form an electrical circuit. The fluorescent layer 30 is excited by the blue and red light sources, and emits another light having a wavelength different from that of the blue and red light, and is emitted from the transparent resin 64. In summary, this case uses two light sources with different wavelengths and active light emission to excite the phosphors in the fluorescent layer to further generate light with different wavelengths from blue and red. Such light has excellent color rendering and brightness enhancement. The applicant has already possessed the requirements for invention, and the applicant has submitted an application in accordance with the law.

第10頁 1228837 圖式簡單說明 第一圖為本發明之實施例斷面圖曱。 第二圖為本發明之實施例斷面圖乙。 第三圖為本發明之實施例斷面圖丙。 第四圖為藍、紅及綠色光波長混合以顯示白光的平面示意 圖。 元件編號: 藍光半導體—10 接腳-----1 2、1 4Page 10 1228837 Brief Description of Drawings The first drawing is a sectional view 曱 of an embodiment of the present invention. The second figure is a sectional view B of the embodiment of the present invention. The third figure is a sectional view C of the embodiment of the present invention. The fourth figure is a schematic plan view of a mixture of blue, red, and green light wavelengths to display white light. Component number: Blu-ray semiconductor—10 pins ----- 1 2, 1 4

紅色半導體——2 0 接腳-----22、24 螢光層----3 0 螢光層----3 0 一 螢光層----31 、32 、33 、34 導電架----42 、44 反射蓋----5 0 凹槽-----5 2 内壁面一 一 一 一 5 3Red semiconductor-2 0 pins-22, 24 fluorescent layer-3 0 fluorescent layer-3 0-fluorescent layer-31, 32, 33, 34 conductive Shelf ---- 42,44 Reflective cover ---- 5 0 Groove ----- 5 2 Inner wall surface one by one 5 3

導線架----6 0 凹槽-----6 2 透明樹脂---64 左導線架---66 右導線架---6 8 透明膠層---7 0Lead frame ---- 6 0 Groove ----- 6 2 Transparent resin --- 64 Left lead frame --- 66 Right lead frame --- 6 8 Transparent adhesive layer --- 7 0

第11頁 1228837 圖式簡單說明 白光-----wPage 11 1228837 Schematic description of white light ----- w

綠光-----GGreen Light ----- G

藍光-----BBlu-ray ----- B

紅光-----R ιιιηιι 第12頁Red light ----- R ιιηιι PAGE 12

Claims (1)

1228837 六、申請專利範圍 1 ' 一種發光裝置’其特徵乃包含: 至少一個以上的藍光半導體做為藍光發光的光源; 至少一個以上的紅色半導體做為紅光發光的光源; 螢光層’係由螢光粉加上透明膠均勻混合而成,該螢 光層可膠合覆接於藍光半導體及紅光半導體上,藍光 半導體及紅光半導體等二種顏色的二光源所發出不同 波長的藍、紅光相混合,其中主要以藍光來激發螢光 層,並由螢光層發出波長與藍光及紅光等波長不同的 光。 2、 依據申明專利範圍第1項所述之發光裝置,其中螢光 層中的螢光粉被藍、紅光二光源所激發的光與藍、紅 光混合出的光,可被人眼定義為白光或趨於白色的 光。 3、 依據申請專利範圍第x項所述之發光裝置,其中螢光 層中的勞光粉受光激發的波長介於5 〇 〇〜5 8 5 nm 4、 依據中請專利範圍第1項所述之發光裝置,其中藍光 半導體所發的藍光其波長約為3 6 0〜4 8 0 nm間, 紅^ ί導體所發出紅光波長為5 8 5〜7 8 0 nm。 5、 依ΐ中請專利範圍第1項所述之發光裝置,其中螢光 層中的f光粉可為銘石榴石系(Yttrium Aluminium Garnet )或矽酸鹽類(-ο# )或硼酸鹽類 (BxO广)材f構成。 〆1228837 6. Scope of patent application 1 'A light-emitting device' characterized by including: at least one or more blue semiconductors as a blue light source; at least one or more red semiconductors as a red light source; the fluorescent layer is composed of Fluorescent powder and transparent glue are evenly mixed. The fluorescent layer can be glued on the blue light semiconductor and red light semiconductor. The two light sources of two colors, blue light semiconductor and red light semiconductor, emit blue and red with different wavelengths. Light is mixed, in which the fluorescent layer is mainly excited by blue light, and the fluorescent layer emits light with a wavelength different from that of blue light and red light. 2. The light-emitting device according to item 1 of the declared patent scope, in which the fluorescent powder in the fluorescent layer is mixed with the light excited by the blue and red light sources and the blue and red light, which can be defined by the human eye. White light or light tending to white. 3. The light-emitting device according to item x in the scope of the patent application, wherein the light-excitation wavelength of the working powder in the fluorescent layer is between 500 and 5 8 5 nm 4. According to the item 1 in the scope of patent application In the light emitting device, the wavelength of the blue light emitted by the blue semiconductor is about 360 to 4800 nm, and the wavelength of the red light emitted by the red conductor is 5 8 5 to 78 nm. 5. The light-emitting device according to item 1 of the patent scope, according to which the f-light powder in the fluorescent layer can be Yttrium Aluminium Garnet or silicate (-ο #) or borate Class (BxO wide) material f. 〆 6、 依據申凊專利範圍第工項所述之發光裝置,其中藍光6. According to the light-emitting device described in the item of the scope of the patent application, in which the blue light 第13頁 !228837 利範圍 ' ' 半導體及紅光半導體可連接於一反射蓋的凹槽 ? 槽中可填充螢光層。 、依據申請專利範圍第1項所述之發光裝置,其 半導體及紅光半導體可連接於主導線架上方預 槽中,螢光層填充於凹槽中,一燈泡型的透明 8 將螢光層及主導線架上端包覆一體包覆。 、依據申請專利範圍第1項所述之發光裝置,其 層中的螢光粉的材質可由下列組合物之一種或 二種的組合來選用·· 螢光粉由鈽元素致活且含γ與人丨的鋁石榴石系 Ce3+ ); 螢光粉由銪元素致活的石榴系(YAG : EU2+m ) 螢光粉由铽CTerbium)元素致活的石榴系(YAG Tb3+ ) 〇 中,凹 中藍光 設的凹 樹脂可 中螢光 二種或 (YAG : 9、一種發光裝置,其特 至少一個以上的藍光 至少一個以上的紅光 螢光層係由螢光粉加 將藍光半導體封裝包 透明膠層將螢光層及 用以激發螢光層,使 二波長不同的光,並 波長得與藍、紅光的 一種顏色的光顯現。 徵包含: 半導體做為藍光發光的光 半導體做為紅光發光的光 上透明膠均勻混合,該螢 覆; ,色半導體封裝包覆,其 發光層發出波長與藍光、 由透明膠層透出,使該不 波長相混合透出,以被定 源; 源; 光層係 中藍光 紅光等 同的光 義為另Page 13! 228837 Benefits '' Semiconductors and red light semiconductors can be connected to the groove of a reflective cover. The groove can be filled with a fluorescent layer. According to the light-emitting device described in the first item of the scope of the patent application, the semiconductor and the red light semiconductor can be connected to the pre-groove above the main wire frame, the fluorescent layer is filled in the groove, and a light bulb type transparent 8 fluorescent layer And the upper end of the main wire frame is covered and integrated. According to the light-emitting device described in item 1 of the scope of the patent application, the material of the phosphor in the layer may be selected from one or a combination of the following compositions. The phosphor is activated by the europium element and contains γ and Human 丨 aluminum garnet Ce3 +); phosphor powder activated by plutonium element (YAG: EU2 + m) phosphor powder activated by plutonium CTerbium) element pomegranate series (YAG Tb3 +) 〇 The blue resin can be two types of fluorescent resin (YAG: 9, a light-emitting device, which has at least one blue light and at least one more red fluorescent layer. The blue light semiconductor package is coated with a transparent adhesive layer by fluorescent powder. The fluorescent layer and the fluorescent layer are used to excite the fluorescent layer, so that two wavelengths of light with different wavelengths than blue and red light appear. Features include: Semiconductor as blue light emitting light semiconductor as red light emitting light The transparent glue is uniformly mixed on the light, and the fluorescent coating is covered; the light-emitting layer emits wavelength and blue light, and is transmitted through the transparent glue layer, so that the non-wavelengths are mixed and transmitted to determine the source; the source; Blue light Red light is the same light 第14頁Page 14
TW92128458A 2003-10-14 2003-10-14 Light emitting device TWI228837B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102270627A (en) * 2010-06-02 2011-12-07 英特明光能股份有限公司 Packaging structure of light-emitting diode
US8120240B2 (en) 2005-01-10 2012-02-21 Cree, Inc. Light emission device and method utilizing multiple emitters
US8125137B2 (en) 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
CN102376842A (en) * 2010-08-11 2012-03-14 亿广科技(上海)有限公司 Light emitting diode package structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8120240B2 (en) 2005-01-10 2012-02-21 Cree, Inc. Light emission device and method utilizing multiple emitters
US8125137B2 (en) 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US8410680B2 (en) 2005-01-10 2013-04-02 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
CN102270627A (en) * 2010-06-02 2011-12-07 英特明光能股份有限公司 Packaging structure of light-emitting diode
CN102376842A (en) * 2010-08-11 2012-03-14 亿广科技(上海)有限公司 Light emitting diode package structure

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