TW574565B - Liquid crystal display for enhancing reflection and method of manufacturing the same - Google Patents

Description

发明 Description of the invention (The description of the invention should state: the technical description of the invention or a brief description of the prior art, contents, embodiments and modes) [Technical field to which the invention belongs] TECHNICAL FIELD The present invention relates to a liquid crystal display ("LCD" ) Technology, especially 5 related LCDs with improved reflectance and manufacturing methods thereof.

[Prior Art J Prior Art Liquid crystal displays are classified into transmissive LCDs, reflective LCDs, and reflective and transmissive LCDs. Transmissive LCDs use external light sources to display images, and reflective 10-type LCDs use internal light sources such as backlights to display images. Reflective and transmissive LCDs operate in transmissive mode, using the built-in light source to display images indoors or when there is no external light source g. Reflective and transmissive LCDs display images by operating in a reflective mode by reflecting light incident from an external light source outdoors or at a location with high illumination. The advantage of the reflective i LCD is that it consumes less power than a comparative transparent LCD because it uses an external light source. It is used in LCD devices with small to medium-sized screens. However, the reflection type LCD reflection crane uses more light than the transmission light, so the display shadow: and cannot provide the South display quality. Techniques for zooming out the reflection efficiency of external light sources have been developed to overcome some of the disadvantages of reflective LCDs. These technologies are mainly classified as 丨) using a reflective layer method with high reflection efficiency, using the method of forming a diffusing layer using beads on the upper substrate (such as color filter i substrate) and iH) forming a relief pattern on the lower substrate (For example, a thin film transistor substrate) on the reflective electrode, let the direct incident 574565 前方 from the front, and the invention explain the method of light being scattered by thought to obtain the maximum reflection efficiency. Because the reflectance is highly related to the green slope of the relief side of the relief pattern, the technique of using the relief pattern is very important for long: improving display quality. First, an organic insulating layer is coated on a substrate on which a thin film transistor ("TFT") 5 is formed, thereby forming a relief pattern on a reflective electrode. The organic insulating layer is exposed and developed using a patterned mask. When the relief pattern is formed on the organic insulating layer, the relief side drawing slope of the net carving pattern can be adjusted by the exposure amount irradiated to the photosensitive organic insulating layer and by continuous heat treatment. However, when the technique using the embossed pattern is applied to an LCD of a large size screen, uneven temperature distribution may occur when the organic insulating layer 10 is hardened, resulting in uneven or inferior heat treatment. Therefore, according to the conventional method, the slope of the relief side drawing in the conventional method is adjusted by heat treatment conditions, such as the hard baking method for the organic insulating layer and the hardening process, and the uniformity of the slope of the relief side drawing of the relief pattern is uneven due to temperature distribution. It is reduced, which results in poor display quality. 15 [Content of the invention] Summary of the invention The first feature of the present invention is to provide a liquid crystal display ("LCD") for improving the reflection ratio with uniform and uniform characteristics of an LCD panel. A second feature of the present invention is to provide an LCD having an anisotropic reflection ratio according to the direction of direct light. A third feature of the present invention is to provide a 1 ^ 〇 manufacturing method for accurately adjusting the slope of the relief side drawing by adjusting the exposure amount irradiated to the organic insulating layer. A fourth feature of the present invention is to provide a manufacturing tool 7 according to the direction of incident light. 574565 (1) The invention describes a method of LCD with anisotropic reflectance. 5 ^ The first feature of the present invention is to provide a liquid crystal display device including a first substrate, a pixel array formed on the first substrate, a first substrate, which faces the first _ its handle. _, Production θ a ^ A substrate, a liquid crystal layer, which is interposed between the 10th and the second substrate; a marginal layer, which is formed on the-substrate, a plurality of first regions and a plurality of second regions are formed on the surface of the insulating layer On the other hand, each of the second regions has a height difference with respect to each of the first regions, and an individual reference line of the first region forms an angle of about 5 to about 15 degrees with respect to a tangent of the individual second region; and a reflective electrode formed at On the insulating layer, the reflective electrode has

Same surface structure as the insulation layer.

In order to achieve the second feature of the present invention, a method for manufacturing a chirp with anisotropic reflectance according to the direction of incident light is provided. In order to achieve the first feature of the present invention, a liquid crystal display device is provided. The liquid crystal display device includes a first substrate and a pixel array formed on a first substrate; a second substrate facing the 15th substrate, a liquid crystal layer, and Is interposed between the first and second substrates; an insulating layer is formed on the first substrate; a plurality of first regions and a plurality of second regions are formed on the surface of the insulating layer; each second region is opposite to There is a difference in degree in each second region. The individual reference line in the first region forms an angle of about 5 degrees to about 15 degrees with respect to the tangent in the second region. A reflective electrode is formed in the shape of 20 on the insulating layer. The reflective electrode has the same surface structure as the insulating layer; and a relief adjustment pattern, which is formed below the insulation layer, and the side drawing of the second area is formed in an asymmetric manner by facing the relief adjustment pattern of the second area, which is improved to a specific level. Direction of substrate ratio. In order to achieve the third feature of the present invention, a method for manufacturing a liquid crystal display 8 574565 玖 and an apparatus for explaining the invention is provided. The method includes: forming a pixel array on a first substrate, and forming an insulating layer on the first substrate; By exposing and developing the insulating layer, a plurality of first regions and a plurality of second regions are formed on one surface of the insulating layer, so that each of the second regions is highly different from each of the first regions. The reference line of the first area is formed at an angle of about 5 degrees to about 15 degrees with respect to the tangent line of each second area; forming a reflective electrode having the same surface structure as the insulating layer; forming a second substrate facing the first substrate ' And forming a liquid crystal layer between the first and second substrates. In order to achieve the fourth feature of the present invention, a method for manufacturing a liquid crystal display 10 device is provided. The method includes: forming a pixel array on a first substrate; forming an insulating layer on the first substrate; and exposing and developing An insulating layer to form a plurality of first regions and a plurality of second regions on one surface of the insulating layer so that each second region is highly different from each first region, and by adjusting the exposure amount, the baseline of each first region Formed at an angle of about 5 degrees to about 15 degrees with respect to the tangent line of each second region; forming a reflective electrode having the same surface structure as the insulating layer; forming a second substrate facing the first substrate; forming a liquid crystal layer between Between the first and second substrates; and before forming the insulation layer, a symmetrical side is formed on the surface of the second region by forming a relief adjustment pattern facing the second region, and the reflection ratio in a specific direction is increased by 20 In order to achieve the fourth feature of the present invention, a method for manufacturing a liquid crystal display device is provided. The method includes: forming a pixel array on a first substrate; and forming an insulation. Layer on the first substrate; a plurality of first regions and a plurality of second regions are formed on the surface of one of the edge layers by using a gap cover through exposure and development of the insulating layer, so that each second The 1-dimensional difference of the regions relative to each of the first regions, and the asymmetric side-drawing of each of the second regions; forming a reflective electrode having the same surface structure as the edge layer; forming a second substrate and facing = a substrate; and A liquid crystal layer is formed between the first and second substrates. 5 According to a specific embodiment of the present invention, by adjusting the exposure amount applied to the organic insulating layer, the inclination angle of the relief pattern of the organic insulating layer is formed to about $ to about 15 degrees and preferably 8 to about 丨 丨 degrees to allow reflection. The ratio increases to the maximum, so the slope distribution of the character carving pattern becomes uniform. According to a specific embodiment of the present invention, the relief adjustment pattern 10 made of metal is formed under the organic insulating layer, so the relief pattern has an asymmetric side drawing on the upper part of the relief adjustment pattern. According to another specific embodiment of the present invention, the part of the relief side painting with a non-steep slope is passed through the slit exposure method, and the part of the relief side painting with a steep slope is subjected to the normal exposure process, thus forming an Embossed pattern. Therefore, by forming an embossed pattern with asymmetrical side paintings, the reflectance is improved due to anisotropic reflectance, and the viewing angle range in a specific direction is guaranteed. Schematic illustration 20 describes the features and other advantages of the present invention by referring to the attached The details of the preferred embodiment will be more clearly shown in the drawings. In the drawings: Figures 1A to 1C are cross-sectional views showing the relief side changes of the organic insulating layer according to the exposure amount irradiated to the organic insulating layer;

Fig. 2 is a cross-sectional view of a reflective type [CD 10 574565, description of the invention, and Fig. 3 is an enlarged view of the relief pattern of Fig. 2 according to a first embodiment of the present invention; Figs. 4A to 4E are cross-sectional views. Figure 2 shows the manufacturing method of the reflective LCD in Figure 2. Figure 5 is a line graph showing the change in reflectance of the organic insulating layer based on the exposure of the organic insulating layer irradiated; The exposure of the organic insulating layer and the slope of the relief drawing of the organic insulating layer are changed. Figure 7 is a line graph showing the black and white reflectance changes of the organic insulating layer based on the exposure of the organic insulating layer. Fig. 8 is a line graph showing changes in the contrast ratio of the organic insulating layer according to the exposure amount irradiated to the organic insulating layer; Fig. 9 is a sectional view of the reflective type 1 ^] [) according to the second embodiment of the present invention; 15 Fig. 10 is a plan view of the relief pattern of Fig. 9; Fig. 11 is an enlarged sectional view of the relief pattern of Fig. 9; Figs. 12A to 12C are cross-sectional views showing the reflective type [CD manufacturing method of Fig. 9; Figure 13 is a sectional view showing the basis A third specific embodiment 20 of the present invention is a method for forming an embossed pattern of an LCD; FIG. 14 is a plan view showing a method for forming an embossed pattern of an LCD according to a fourth specific embodiment of the present invention; and FIGS. 15A and 15B This is a sectional view showing a method for manufacturing a reflective and transmissive LCD according to a fifth embodiment of the present invention. 11 574565 发明 Description of the invention [Information for application] According to a preferred embodiment of the present invention, it is revealed that the liquid crystal for improving reflection is not beneficial and its manufacturing method. Several specific embodiments will be described in detail below with reference to the drawings. 5 Exposure equipment for lithography methods has become highly accurate with the development of semiconductor technology. Thus, in the process of forming the relief pattern, the exposure device is used to adjust the exposure amount irradiated to the organic insulating layer, and the slope of the relief side drawing is determined according to the heating, so as to improve the uniformity of the relief pattern. Generally, the organic insulating layer is made by the following method: First, a photosensitive organic insulating layer made of an acrylic 10-series resin is coated on an insulating substrate. A plurality of pixels are formed on the insulating substrate, and each pixel has a thin film transistor. Then, the photosensitive organic insulating layer is subjected to a soft-baking process, so that the solvent is removed by evaporation at a low temperature close to the glass transition temperature. The organic insulating layer is exposed by applying ultraviolet light ("uv") to the organic insulating layer mask, and the contact holes exposing each pixel portion 15 are exposed by using a tetramethylammonium hydroxide ("TMAH") developer to expose the organic insulating layer. form. At the same time, a relief pattern for scattered light is formed on the surface of the organic insulating layer. Secondly, the organic insulating layer is hard-baked and dried to complete reflow, deaeration, and solvent removal of the organic insulating layer. Then, the organic insulating layer is hardened at a temperature higher than about 20 200 ° C for more than about 1 hour, thereby hardening and stabilizing the organic insulating layer. The hardening step enhances the hard drying effect. Figures 1A to 1C are sectional views showing changes in the relief side drawing of the organic insulating layer according to the exposure to the organic insulating layer, in which the exposure decreases from Figures 1A to 1C. 12 574565 发明, description of the invention As shown in FIGS. 1A to 1C, when the exposure amount irradiated to the organic insulating layer increases, the slope of the relief side drawing formed on the organic insulating layer 10 increases. However, when the exposure amount irradiated to the organic insulating layer is reduced, the slope of the relief drawing is reduced, and the slope distribution of the relief drawing is uniform. 5 In the conventional method, after increasing the exposure amount irradiated to the organic insulating layer, after magnifying the relief side drawing slope, the oven or oven is continuously hard-dried and hardened at 200 ° C for 1 hour, resulting in an organic insulating layer. 'Reflow' to adjust the relief side slope. The temperature difference between each glass substrate is large enough to form a non-uniform reflow amount. The embossed side drawing slope of this embossed pattern is not uniform. 15 20

However, according to a specific embodiment of the present invention, the exposure amount is reduced to about 30% to about 40% by reducing the exposure amount, and the relief side drawing slope is reduced. The hard-bake drying process is performed at about 100 ° C. and about 120 C for about 3 minutes. Then, at about 23 ° (:), perform the desalination treatment for about 100 minutes. The temperature of the hard roasting and drying process is slowly increased to the hardening temperature 2 After about 60 minutes, the hardening temperature is maintained for about 40 minutes. When the baking temperature increases rapidly, the reflow amount increases, and when the hard baking temperature increases slowly, the reflow amount decreases. When the reflow amount of the insulating layer increases, the surface of the organic insulating layer becomes flat, so ; Pre-carving pattern. In this way, the stone can be reduced by slowly increasing the hard-bake temperature. The amount of J reflow can be reduced, and the relief side painting can be maintained. According to the specific embodiment of the present invention, the slope of the relief side painting is owed by the animal. The amount of exposure to the organic insulating layer is determined. At the hard-baking and hardening place, S is given again: 'moving $ reduced'. Therefore, the conventional method is compared. In the conventional method, the slope of the relief phase is heat-treated by the hardened organic insulating layer. Adjustment, this invention 13 574565 发明, the method of describing the invention can minimize the thermal dependency. The uneven distribution of the slope of the relief drawing is caused by the uneven distribution of the reflow through the uneven temperature distribution. Therefore, according to the present invention, the uneven distribution of the slope of the relief drawing Uniform. Reference numbers 10a, 10b, and 10c indicate the exposed area of the organic insulating layer, and 5 reference numbers 12a, 12b, and 12b indicate the relief side drawing slope. Figure 2 is a reflective LCD according to the first embodiment of the present invention. A cross-sectional view. Referring to FIG. 2, the reflective LCD includes an LCD panel 350 for displaying an image, and a driving integrated circuit (not shown) for generating an image signal. 10 The LCD panel 350 includes a first substrate 250, and A second substrate 300 facing the first substrate 250, a liquid crystal layer 280 interposed between the first substrate 250 and the second substrate 300, and a pixel electrode such as a reflective electrode 22, which are formed on the first substrate Between the 250 and the liquid crystal layer 280. The first substrate 250 includes a first insulating substrate 100 and a thin film transistor ("TFT") 2 formed on the first insulating substrate 100 as a switching device. TFT 200 includes gate 105, gate insulation film 110, active pattern 115, ohmic contact layer 120, source 125, and drain 130. Gate 105 is branched by a gate line (not shown in the figure) The gate line extends in the first direction on the first insulating substrate 100. 20 The gate insulating film 110 is formed on the entire surface of the first insulating film 100, and a gate electrode 105 will be formed on the surface. The insulating film 11 sequentially forms an amorphous silicon active pattern 15 and a n + amorphous silicon ohmic contact layer 120 sequentially above the gate 105. The active pattern 115 includes polycrystalline silicon. The first embodiment is applied to a substrate with a bottom. LCD with a gate structure, but the first embodiment can also be applied to an LCD with a top-gate structure of 14,574,565 发明. The source electrode 125 and the gate electrode 130 are formed on the ohmic contact layer 120 and the gate insulating film 110. The gate 105 is disposed between the source 125 and the drain 130, thus completing the TFT 200. 5 On the first insulating substrate 100 on which the TFT 200 is formed, an inorganic insulating film (not shown) and an organic insulating layer 21 o are sequentially deposited as a passive layer. The inorganic insulating film guarantees the reliability of the TFT and the pad, and enhances the bonding strength of the wafer-on-glass ("COG") connection. The organic insulating layer 21 is formed only in the display area. The contact hole 215 is formed through the inorganic and organic insulating film, and the exposed portion of the drain electrode 1G 13 0 or the source electrode 2 5. The organic insulating layer 210 has a relief pattern. The relief pattern includes a plurality of first regions 212 and a plurality of second regions 214. Therefore, the first region 212 has a concave shape with a lower height than the second region 214, and the second region 214 has a height. Relative to the first region 212, it has a higher convex shape. In addition, the contact holes 2 and 5 are formed on the insulating layer 210, and the exposed part of the drain electrode 130 or the source electrode 125 is formed. Figure 3 is an enlarged view of the relief pattern in Figure 2. Referring to FIG. 3, the relief pattern of the organic insulating layer 210 is formed such that the tangent of the second region 214 forms an inclination angle of about 5 to about 15 and preferably about 8 to about ^ degrees relative to the bottom side 400 of the first region 212 ( “0 ,,). In particular, the reference line 400 of the first area 212 is defined as being parallel to the 0 / Λ first insulating substrate 100, so the angle between the reference line 400 and the tangent line 410 on the surface side of the second area 214 becomes an inclination angle), in other words The relief side draws a slope. When the slope (0) is about 5 to about 15 degrees, the reflection ratio becomes the largest, forming a relief pattern with a uniform low step portion. The reflective electrode 220 is formed on the contact hole 215 and the organic insulating layer 21o. Act 15 574565 玖, description of the invention is a pixel electrode, the reflective electrode 220 follows the shape or structure of the surface of the organic insulating layer 21. The reflective electrode 220 is made of high reflectance ("Ai") or silver (" Ag ”), connected to the drain electrode 13 through the contact hole 215. The reflective electrode 220 has a plurality of first regions 212 which are a plurality of cut grooves, and a plurality of fifth regions 214 which are a plurality of convex portions, The first region 212 and the second region 214 are reliefs corresponding to the organic insulating layer 210 The surface is used as a microlens. The first alignment film 260 is formed on the reflective electrode 220. The second substrate 300 facing the first substrate 250 includes a second insulating substrate 305, a color filter 31, and has red, green, and blue (" RGB ") pixels to display color, transparent universal electrode 3 j 5 10 and second orientation film 320. The second insulating substrate 305 is made of glass or ceramic material, and its material is the same as that of the insulating substrate 100. Color filter The sheet 3 10 is disposed under the second insulating substrate 305; the general electrode 315 and the second alignment film 320 are sequentially formed under the color filter 310. The second alignment film 320 together with the 15th-first alignment film 260 of the first substrate 250 The liquid crystal molecules of the common front-inclined liquid crystal layer 280. A seal line 270 with a spacer shape is inserted between the first substrate 250 and the second substrate 300, so it is between the first substrate 25 and the second substrate 3. 〇 form a space. The liquid crystal layer 280 fills this space, thus completing the reflective LCD 〇20 TFT 200 The gate 105 is connected to the gate line extending in the first direction, and the source 125 is connected to the vertical first Data line of the second direction of the direction ( (Not shown) 'and the drain electrode 130 is connected to the reflective electrode 220. Thus, when a scanning voltage is applied to the gate electrode 105 via the gate line, the data signal on the data line is applied from the source electrode 125 to the drain electrode no via the active pattern 115. When the data signal 16 574565 发明, the invention description is applied to the drain electrode 130, there is a voltage difference between the reflective electrode 22o connected to the drain electrode 130 and the general electrode 3 15 of the second substrate. The pixel electrode 220 and the general electrode 315 are inserted The molecular array of the liquid crystal layer 280 is changed, and the light transmittance of the liquid crystal layer is changed. Thus, the TFT 200 is used as a 5-pixel switching device for operating the LCD panel 350. 4A to 4E are sectional views showing a method of manufacturing the reflective LCD of FIG. 2. Referring to FIG. 4A, a first metal layer is deposited on a first insulating substrate 100 made of glass or ceramic. The metal layer is, for example, chromium ("Cr") having a thickness of about 500 angstroms and a thickness of about 2500 angstroms. -铉 ("Ai-Nd ,,"). Subsequently, the deposited 10 metal layer is patterned by lithography, thereby forming a gate wiring having a gate line extending in the first direction (not shown in the figure) , The gate 105 branched by the gate line, and the gate pad (not shown in the figure). The gate pad is connected to one end of the gate line to receive an external signal and transmit the received signal to the gate line. The preferred gate 105 has a cone The side walls are depicted on the side. 15 A silicon nitride film with a thickness of about 4500 angstroms is then deposited on the entire surface of the first insulating substrate 100 by a plasma enhanced chemical vapor deposition ("PECVD") method. Insulating film i 丨 〇. An amorphous silicon thin film having a thickness of about 2000 angstroms is formed on the gate insulating film 110 by a PECvd method. A η-doped amorphous silicon thin film is deposited thereon by a pecvd method with a thickness of about 500 angstroms. 20 Amorphous silicon film And doped amorphous silicon film are deposited in situ in the same PECVD device Subsequently, the amorphous silicon film and the in-situ deposited amorphous silicon film are patterned by lithography processing, and the active steps of the amorphous silicon film are sequentially formed. Fig. 115 and the ohmic contact layer 12 of the η-doped amorphous stone film are at the gate. A gate electrode 105 is provided on the insulating film 110. 17 574565 发明 Description of the invention Subsequently, a second metal layer made of metal is deposited on the first insulating substrate 100 which has been formed of the aforementioned substance by a base ore method. For example, a second metal layer of chromium ("Cr"), chromium-ming ("Cr-Al"), or chromium-I-chromium ("cr-Al-Cr ,,") having a thickness of about 1500 to about 4000 Angstroms. Then the second metal layer is patterned to form a data wiring 5 '. The data wiring includes a data line (not shown) extending in the second direction of the vertical gate line, a source 125 branched from the data line, and a drain 130, And a data pad connected to one end of the data line and transmitting an image signal to the data line. In this way, the thin film transistor 200 is completed, which includes the gate electrode 105, the gate insulating layer 10, the active pattern 115, the ohmic contact layer 120, the source electrode 125, and the gate electrode 130. The gate 10 insulating film Π0 is inserted between the gate line and the data line, thereby preventing the gate line from contacting the data line. A portion of the ohmic contact layer 120 between the source 125 and the drain 130 is removed by a reactive ion etching ("RIE") method. The portion of the active pattern ι15 between the source 125 and the drain 130 becomes a channel region of the TFT 200.

15 According to the first embodiment, 'the bottom gate TFT LCD is manufactured using five photomasks', wherein two photomasks are used to form the active pattern 115, the ohmic contact layer 120, and the data wiring. But the applicant filed a patent application [South Korea Intellectual Property Office ("KIP0") Patent Application No. 1998-049710, application date November 19, 1998) 'In this case, four photomasks were used to manufacture the bottom gate Tft LCD Only 20 uses a photomask to form the active pattern 115, the ohmic contact layer 120, and the data wiring. The method of manufacturing a TFT LCD by the four-mask method will be described later. First, an active layer, an ohmic contact layer, and a second metal layer are sequentially deposited on the gate insulating layer 110. A photoresist film is coated on the second metal layer, and a photoresist pattern (not shown) is formed by exposing and developing the photoresist film. The photoresist pattern includes a first portion provided at 18 574565 玖, a TFT transport area having a first thickness, a second portion provided above a data wiring and having a second thickness thicker than a first thickness, and a photoresist film Third part removed. Then the data wiring of the second metal layer, the doped amorphous silicon film and the ohmic contact layer 120, and the active pattern 1155 of the amorphous silicon film have been etched by the second metal film, the ohmic contact layer, the active layer, A second metal film under the first part and a part of the thickness of the second part are formed. The rest of the photoresist pattern is removed. In this way, the active pattern 115, the ohmic contact layer 120, and the data wiring having the source 125 and the drain 130 are simultaneously made by using a photomask. 10 Referring to FIG. 4B, a transparent inorganic insulating film (not shown in the figure) made of, for example, silicon nitride is formed on the entire surface of the first insulating substrate 100 (on which the TFT 200 is formed) as a passive layer. The first contact hole is formed by etching the inorganic insulating film and the gate insulating layer 110 so that the drain electrode 130 is partially exposed. For example, a photosensitive organic insulating layer 21 made of acrylic methacrylate is applied on the first contact hole and the inorganic insulating film to a thickness of about 3 to about 5 micrometers by spin coating or seam coating. It is then soft-dried at approximately glass transition temperature (i.e., about 100 to about 120 ° C, for example, 90 ° C) for about 3 minutes, and the solvent is removed. A contact hole 215 is formed in the organic insulating layer 210, and the contact hole 215 and a plurality of cutouts and protrusions are formed through an ultraviolet light exposure method and a development method. 2〇 / The method of forming the contact hole 215 and a plurality of cutouts and protrusions on the organic insulating layer 21 〇 The details are described later: Referring to FIG. 4C, the first photomask 450 is aligned above the organic insulating layer 210 to form a contact hole. 215. The first mask 450 has a pattern corresponding to the contact hole 215. Subsequently, the organic insulating layer 210 is subjected to the first full exposure process, so that the organic insulating layer 21 is exposed at the source 125 or the drain 130 19 574565 (above). Secondly, in order to form a plurality of notches and protrusions, a second photomask 500 corresponding to the plurality of notches and protrusions and used to form a microlens is aligned above the organic insulating layer 210. Then, the second photomask 500 is used for lens exposure 5 processing to an exposure amount of 2000 ms, thereby exposing the organic insulating layer 210 twice, except for the contact hole 215.

The developing process is performed to form the contact holes 215 of the exposed portion of the drain electrode 130 and a relief pattern having a plurality of first regions 212 and second regions 214 on the surface of the organic insulating layer 210. 10 When 2000 ms exposure is applied to the exposure process, the relief pattern has

The slope (0) is about 5 to about 15 degrees and preferably about 8 to about 11 degrees, thereby obtaining a maximum reflectance. In addition, due to the height difference between the first region 212 and the second region 214, the second / incompleteness in the relief pattern is small, so the relief pattern has a uniform low step portion. In this way, the step deviation of the relief pattern becomes small, so that a uniform cell gap can be maintained. In addition, because the step portion is small, the directional force can be maintained uniformly. Because the hollow depth of the relief pattern is small, the liquid crystal injected along the hollow of the relief pattern is reduced, so it is possible to avoid the formation of scars at the port where the crystal is injected. After the development process is completed, 'the organic insulating layer 21 () is baked in an oven or an oven for about 100 to about 12GT: the temperature is hard-baking and dried for about 3 minutes'. The organic insulating layer 21 is reflowed, degassed, and the solvent is removed. . Secondly, the temperature slowly rises to 23 (TC minutes) and then maintains the temperature for about 23 generations. In this case, the hardening treatment is performed, and the organic insulating layer 210 is hardened and stabilized to a final thickness of about 2 With reference to Figure 4D, the gate insulation film no is subjected to dry-contact engraving, so it is shaped as 20 574565 玖, and the invention is described as a contact hole, exposing the gate pad and data pad of the pad area. Subsequently, it has a high reflectance. A third metal layer made of metal such as aluminum ("A1,") or silver ("Ag") is deposited on the organic insulating layer 210 and the contact hole 215. The third metal layer is formed by patterning through lithography The reflective electrode 220 is used as a 5-pixel electrode. The reflective electrode 220 is connected to the drain 130 of the TFT 200 through a contact hole 215. A photoresist is applied to the reflective electrode 220, and the first alignment film 260 is formed by a rubbing method. The first orientation film 260 is inclined at the predetermined angle by the liquid passing layer of the liquid passing layer 280. The reflective electrode 220 has the same shape as the surface of the organic insulating layer 210. The reflective electrode 220 has a plurality of first regions or slits 212. And a second zone Or the convex portion 214, which corresponds to the surface of the organic insulating layer 21 and the relief pattern as a micro lens. As shown in FIG. 4E, a color filter 310, a general electrode 3 15 and a second orientation film 320 are sequentially formed on the second insulating substrate 3. On the 05, the second insulating substrate 3005 series 15 is made of the same material as the second insulating substrate 100, thus completing the second substrate 300. The second substrate 300 is disposed to face the first substrate 25. The interval A body-shaped sealing line 270 is inserted between the first substrate 250 and the second substrate 300, thus forming a space between the first substrate 250 and the second substrate 300. The liquid crystal layer 280 is injected into the space by a vacuum injection method. Therefore, a reflective LCD according to the first embodiment of 20 of the present invention is completed. A polarizing plate 33 and a phase difference plate 325 are attached to the front surface of the second substrate 300. Although not shown in the drawings, a black matrix may be provided on the first substrate. Between the two insulating substrates 305 and the color filter 31. Figure 5 is a line diagram showing the change in the reflectance of the organic insulating layer according to the exposure of the organic insulating layer. The outline is indicated by the reference number 500. Figure 6 21 574565 发明, invention description is a line drawing ' The change of the slope of the relief drawing according to the exposure of the organic insulating layer is indicated by the reference number 600. Referring to Figures 5 and 6, when the exposure of the organic insulating layer 210 is about 2000 ms, the slope of the relief drawing is about 2000 ms. A slope of about 8 to about u degrees is formed, and a reflectance greater than about 200 is obtained at the 5 slope. However, when the exposure amount of the irradiation on the organic insulating layer 210 decreases to less than about 2000 ms, the slope of the relief side drawing is less than about 5 degrees, The reflectance is reduced. Figure 7 is a line graph 'showing that the reflectance of black and white changes according to the exposure amount of the organic insulating layer, and the outline is indicated by reference number 700. Figure 8 is a line 10 diagram showing the change in contrast ratio according to the exposure of the organic insulating layer. The outline is indicated by reference number 800. As shown in Fig. 7, "A" represents a white reflection ratio "and" B "represents a black reflection ratio. Referring to FIGS. 7 and 8, the reflection ratios of white and black have individual maximum values when the exposure amount is about 2000 ms. When the exposure is reduced to about 2000 ms, the white reflection ratio is enhanced, so the black reflection ratio is increased. The LCD has a high contrast ratio ("C / R") greater than about 30. Fig. 9 is a sectional view of a reflective LCD according to a second embodiment of the present invention. The same components as in Figure 2 are marked with the same reference numbers. Referring to FIG. 9, the first substrate 250 includes a first insulating substrate 100, and gate lines (not shown in the figure) and data lines (not shown in the figure) formed on the first insulating substrate 100 are perpendicular to each other. And a thin film transistor ("TFT") 200 formed on a pixel defined by a gate line and a data line as a switching device. The TFT 200 includes a gate electrode 105, a gate insulating film 110, an active pattern 5a, an ohmic contact layer 120, a source electrode 125, and a drain electrode 130. The second embodiment is applicable to an LCD with a bottom-closed structure, but the second embodiment is also applicable to an LCD with a top-gate structure. At least one relief adjustment pattern 135 is formed on the gate insulating film 110 in an island shape. The relief adjustment pattern 135 is composed of the same metal layer (including the source 5 electrode 125 and the drain electrode 13) as the data line. The relief adjustment pattern 135 is formed on the organic insulating layer 210 to form a relief pattern, and the exposure process formed on the relief adjustment pattern enhances the exposure effect. A part of the relief deposited above the relief adjustment pattern 135 has a non-steep relief side painting 216a, and the other part above the relief adjustment pattern 135 has a steep relief side painting 21 讣, so it has 10 asymmetric relief side paintings. The transparent inorganic insulating film 205 and the organic insulating layer 21 are sequentially deposited on the first insulating substrate 100 as a passive layer, and a TFT 200 and a relief adjustment pattern 135 are formed thereon. The inorganic insulating layer 205 is preferably formed as a single layer of SiOx, SiNx * SiOxNx, or a double layer of SiO ^ SiNx. The contact hole 215 is formed through the 15 inorganic insulating film 205 and the organic insulating layer 210, and the exposed portion has an electrode 13 0 or a source electrode 12 5. The organic insulating layer 210 has a relief pattern, which includes a plurality of first regions or cut grooves 212 and a plurality of second regions or convex portions 214 and 216. Therefore, the height of the first region 212 having a concave shape is lower than that of the second regions 214 and 216. And, the 202nd region 214, 216 has a convex shape having a height higher than that of the first region 212. As shown in FIG. 11, the second region 216 disposed above the relief adjustment pattern 135 has an asymmetric side drawing. Figure 10 is a plan view of the relief pattern of Figure 9, and Figure 11 is an enlarged view of the relief pattern of Figure 9. Referring to FIGS. 10 and 11, a transparent inorganic insulating layer 205 made of nitride nitride (23 574565 玖, example of description of the invention) is formed under the organic insulating layer 210. When the reflected light pattern is formed under the organic insulating layer 210, during the exposure process of forming a relief pattern on the organic insulating layer 210, the portion above the organic insulating layer 210 pattern is more susceptible than other portions of the organic insulating layer 210. 5 In other words, when a reflective layer such as a metal pattern exists under the organic insulating layer 210, the exposure effect is enhanced by about 10 to about 20 ° / 〇 ^ than when only the transparent inorganic insulating layer 205 exists under the organic insulating layer 210. It depends on the reflection ratio of the pattern. Therefore, according to the second specific embodiment of the present invention, the relief adjustment pattern 135 made of the same metal material as the source electrode 125 or the endless electrode 130 is formed under the organic insulating layer 210, so that the second region 216 is adjusted in the relief adjustment pattern. The side of the upper part of 135 is formed to have a slope (0 〇, thereby increasing the reflection ratio to a maximum, and the second area 216 is formed to have a slope (0 J, of which the reflection ratio is minimized to a side outside the relief adjustment pattern 135). It is preferable that the second tangent of the second region 216 is greater than about 10%, and the slope relative to the reference line of the first region 212 is about 8 degrees to about 11 degrees, and the second tangent of the second region 216 is greater than about 10% relative to The baseline of the first region 212 has a slope greater than about 11 degrees. In addition, the relief adjustment pattern 135 is formed below the first region 212 and the second region 216, so that the second region 216 has an asymmetric relief side edge. Especially the first A part of the relief adjustment pattern 135 formed below the region 216 has a relief side green with a first slope; and the other part of the second region 216 has no + engraved adjustment pattern 135 formed below the part, and has a smaller slope than the first slope. Float of the second slope Since each second region 214 is formed over a metal layer (for example, source 125 or drain 24 574565 玖, invention description electrode 130), the second region 214 above source 125 or drain 130 is symmetrical. Relief side drawing. When part of the second area 216 is set above the source 125 or the drain 130-end, the part of the second area 216 has a relief side drawing with a steep slope. 5 The reflective electrode 22 is formed in the contact hole 215 And an organic insulating layer 210. The reflective electrode 220 includes a material having aluminum or silver having a high reflectance, and is connected to the drain electrode 130 through the contact hole 215. The reflective electrode 220 has a plurality of first regions or slots 212, and a plurality of The second region or convex portion 214, 216, which corresponds to the surface of the organic insulating layer 210 and the relief pattern, functions as a micro lens 10. The first alignment film 260 is formed on the reflective electrode 220. The second surface facing the first substrate 250 The substrate 300 includes a second insulating substrate 305, a color filter 310 having RGB pixels to display colors, a transparent universal electrode 315, and a second alignment film 320. A spacer-shaped sealing line 270 is inserted between the first substrate 250 and the second substrate. base

Between the plates 300, a space is thus formed between the first substrate 250 and the second substrate 300. The liquid crystal layer 280 fills this space, thus completing a reflective LCD. 12A to 12C are sectional views showing a method of manufacturing the reflective LCD of FIG. 20 Referring to FIG. 12A, a first insulating substrate 100 made of an insulating material (such as glass or ceramic) is deposited with, for example, about 500 Angstroms of chromium ("Cr") and about 2500 Angstroms of aluminum-"" Al -Nd "). Subsequently, a metal layer is deposited and patterned to form a gate wiring, which has a gate line (not shown) extending in the first direction, a gate electrode 105 branched from the gate line, and a gate pad 25 574565. Not shown). The brake pad is connected to the simple line terminal, and receives an external signal, and transmits the received signal to the brake line. Subsequently, the thickness of the open insulating film made of thick side spar nitride, the active pattern made of thick sapphire "said stone slab, and the thick slab made of thick sapphire slab / ohmic made of 5 spar stone slab The contact layer 120 is sequentially formed on the first insulating substrate 100 on which the wiring is formed. Subsequently, the first insulating substrate 100 on which the resulting substance is formed is deposited by sputtering to a thickness of about 1500 to about 4000 angstroms. A second metal layer, such as chromium ("Cr ,,"), chromium-aluminum ("Cr_Ar), or chromium_aluminum_chromium (" Cr_Ai_10Cr "). Then the second metal layer is patterned to form data Wiring, which includes a data line (not shown in the figure) extending in the second direction of the vertical gate line, a source 125 and a drain 130 branched from the data line, and one end connected to the data line and transmitting an image on the data line Signal data pads. At least one relief adjustment pattern 135 of the second metal layer is formed in a pre-15 疋 region of the first insulating substrate 100, thereby improving the reflection ratio and ensuring a viewing angle range in a specific direction. Ohmic contact layer 120 between source 125 and sink 130 Reactive ion etching ("RIE") method is removed. Gate 105, gate insulating film 110, active pattern 115, ohmic contact layer 120, source 125, and drain 130 are thus formed, and TFT 200 is completed. 12B, for example, a transparent inorganic insulating film 205 made of silicon nitride is formed on the entire surface of the first insulating substrate 100 (on which the TFT 200 is formed) as a passive layer. The first contact hole is etched through the inorganic insulating film 205 And the gate insulating layer 110 are formed, thereby partially exposing the drain electrode 130 of the TFT 200. The photosensitive organic insulating layer 210 made of this acrylic resin is applied by spin coating or slit coating 26 574565 发明, the invention description method is applied to the first The contact hole and the inorganic insulating film 205 have a thickness of about 3 to about 5 microns. Then, a soft baking process is performed at a temperature close to the glass transition temperature, such as 90, for about 3 minutes to remove the solvent. On the organic insulating layer 21, ultraviolet light is used. The light exposure process and the development process form a contact hole 215 that exposes the drain electrode 130 and a plurality of cutouts and protrusions. The first photomask has a pattern corresponding to the contact hole 215 pattern, and is used to expose the organic insulation through the first full exposure process. The layer 21 is above the drain 13 and then the second exposure mask 500 with a micro lens pattern is used for lens exposure processing to an exposure amount of about 2000 ms, so the organic 10 insulating layer 210 is exposed twice. Except for the contact hole 215. A developing process is performed to form the exposed portion of the drain hole 130 of the contact hole 215 and a relief pattern having a plurality of first regions 212 and second regions 214 and 216 on the surface of the organic insulating layer 21 During the second exposure process, the second region 216 has an asymmetric side picture. In other words, the second region 216 with an asymmetric side picture 15 includes a first portion having a non-steep side picture slope 216a and a side picture 21 having a steep slope. The second part of 讣. According to the present invention, another photomask is not needed to adjust the slope of the relief pattern in a specific area because the data wiring metal layer is used to form the relief adjustment pattern. After the development process is completed, the organic insulating layer 210 is placed in an oven or an oven at about The temperature of 100 to about 120 ° C. is subjected to a hard baking process for about 3 minutes, and then the organic insulating layer 210 is flowed, the organic insulating layer 21 is degassed, and the solvent is removed. The temperature slowly rises to about 230 ° C for about 60 minutes, and then the temperature is maintained at about 230 ° C for about 40 minutes. Under such conditions, the organic insulating layer is hardened after 27 574565 玖, description of the invention, thereby hardening and stabilizing the organic insulating layer. The final thickness of the organic insulating layer 2 is about 2 to about 3 m. Referring to FIG. 12C, first, the gate insulating film 11 is subjected to a dry etching process (but not shown in FIG. 12C), thereby forming a gate pad 5 pad and a data pad that contact the exposed areas of the pad. Subsequently, a third metal layer made of a metal with a high reflectance such as aluminum ("A1") or silver ("Ag") is deposited on the organic insulating layer 21 and the contact hole 215. The third metal layer is subjected to a lithography process to form a reflective electrode 22, which is used as a pixel electrode. The reflective electrode 220 is connected to the drain electrode 130 of the TFT 200 through a contact hole 215. A photoresist is applied to the reflective electrode 220, and the first alignment film 260 is formed by a rubbing method. The first alignment film 260 tilts the liquid crystal molecules of the liquid crystal layer 280 at a predetermined angle. The reflective electrode 220 has the same shape as the surface of the organic insulating layer 21. The reflective electrode 220 has a plurality of first regions or slits 212 and a plurality of second regions or protrusions 214, 216, and functions as a microlens corresponding to the surface of the organic insulating layer 21 and the pattern of the relief 15. In this way, a specific part of the reflective electrode 22 has an asymmetric lens, so that the reflection ratio is improved and the viewing angle range in a specific direction is guaranteed. The color plate 310, the common electrode 315, and the second alignment film 320 are sequentially formed on the second insulating substrate 305. The substrate 305 is made of the same material as the first insulating substrate 1002, and thus the second substrate 300 is completed. The second substrate 300 is disposed to face the first substrate 250. A spacer-shaped sealing line 270 is interposed between the first substrate 250 and the second substrate 300, so that a space is formed between the first substrate 250 and the second substrate 300. The liquid crystal layer 280 is filled into the space by the vacuum injection method, thus completing the reflective 28 574565 according to the second embodiment of the present invention. LCD of the invention. Fig. 13 is a sectional view showing a method of forming an LCD + engraved pattern according to a third embodiment of the present invention. The third embodiment of FIG. 13 is the same as the second embodiment, but the relief adjustment pattern 135 is formed below the peak of the convex portion in the center of the second region 214, so that at least all grooves 217 are formed in the second region 214. In addition, The relief adjustment pattern 135 may be formed in the first region 212 under the cut groove, thereby deepening the depth of the first region 212. Such a variety of relief side drawing shapes can be formed by adjusting the arrangement of the relief adjustment pattern 135. 10 FIG. 14 is a cross-sectional view showing a method for forming an LCD carving pattern according to a fourth embodiment of the present invention. Referring to FIG. 14, tft is made by the same method as the first embodiment, and then an inorganic insulating layer and an organic insulating layer 210 are sequentially formed on the first insulating substrate of the TFT. The organic insulating layer 21G above the τρτ drain is exposed using a photomask (with a pattern corresponding to the contact hole) 15 by the full exposure method. Then, a part of the organic insulating layer 21 (but excluding the corresponding contact hole portion of the organic insulating layer 210) is exposed by a lens exposure method using a micro lens pattern using a slit mask. At least one minute mask pattern ("B") is formed on the slit mask 600 corresponding to a portion ("A1") having a non-steep slope portion 216a, so that the grooved first region 20 212 passes the full exposure. 21 cents with steep hill shape shapes are exposed through a normal exposure process, and the second region 216 has a non-steep slope part—exposed via a slit exposure method. However, the minute mask pattern is not formed in the portion of the slit mask 600 corresponding to the steep slope portion 21 讣 ("α2"). The organic insulating layer 21G is a gap ^ mask with the aforementioned structure. 29 574565 发明 Description of the invention Light and development. The relief pattern is formed in this way, and has a plurality of first regions and a plurality of second regions, where the second region has an asymmetric relief side drawing. 15A and 15B are sectional views showing a method of manufacturing a reflection and transmission type LCD according to a fifth specific embodiment of the present invention. Referring to FIG. 15A and FIG. 5 ', a relief pattern is formed on the organic insulating layer 210 by the same method as that of the second embodiment. The embossed pattern includes a plurality of first regions or cutouts 212, which have a concave shape with a lower degree of locality than the second regions or convex portions 214, 216; and includes a plurality of second regions 214, 216, which have a height higher than that of the first region. The convex shape of a region 212. 10 In particular, on the first insulating substrate 100, a TFT 200 is formed, which includes a gate electrode 105, a gate insulating film 110, an active pattern 115, an ohmic contact 120, a source electrode 125, and a drain electrode 130. Forming at least one relief adjustment pattern 135 to increase the reflectance and ensure the viewing angle range in a specific direction when the source and drain electrodes 125 and 130 are formed. 15 The transparent inorganic insulating film 205 made of such silicon nitride is formed on the entire surface of the first insulating substrate 100 as a passive layer, and a TFT 200 and a relief adjustment pattern 135 are formed thereon. Subsequently, the first contact hole is formed by etching the inorganic insulating film 205 and the gate insulating layer 110, so that the electrode 130 of the TFT 200 is partially exposed. The photosensitive organic insulating layer 210 made of such an acrylic resin is formed on the first contact hole and the inorganic insulating film 205 by a spin coating method or a gap coating method. On the organic insulating layer 210, it is exposed and developed. A contact hole 215 is formed to expose the drain electrode 130 and a plurality of cutouts and protrusions. A first photomask having a pattern corresponding to the contact hole 215 is used for exposing the upper portion of the organic insulating layer 210 on the drain electrode 130 through the first full 30 574565 (Explanation of the Invention) exposure method. A portion of the organic insulating layer 210 (excluding the contact hole 215) is subjected to the first exposure treatment using a second mask 500 having a microlens pattern through a lens exposure method with an exposure amount of about 2000 ms. The development process is performed to form a contact hole 2 and 5 with an exposed portion 13 and a relief pattern, and a relief pattern having a plurality of first regions 212 and second regions 214 and 216 on the surface of the organic insulating layer 210. During the second exposure process, the second region 216 has an asymmetric side profile. In other words, the second region 216 with the asymmetric side picture includes a first portion 216a with a non-steep side picture slope and a second portion 216b with a steep side picture. The gate 10 insulating film 11 is subjected to a dry etching process (but FIG. 15A is not shown), thereby forming a contact hole, a gate pad and a data liner exposed to the pad area. Subsequently, a transparent conductive layer made of materials such as osmium-tin-oxide ("ITO") or indium-zinc-oxide ("IZ0 ,,") is deposited on the organic insulating layer 21o and the contact hole 215. Transparent The conductive layer is patterned by lithography to form a transparent electrical 15 electrode 230, which is electrically connected to the drain electrode 13 through the contact hole 215. Referring to FIG. 15B, a reflective conductive layer made of aluminum or silver is deposited on the organic insulating layer. On the obtained material of 210, a transparent electrode 23 is formed above it. The reflective conductive layer is processed by lithography to form a reflective electrode 22. The transparent electrode 230 leaves only the reflective electrode 220 portion as a reflective area, and the transparent electrode 2320 The other part from which the reflective electrode 220 is removed becomes a transmissive area. A second substrate on which a color filter is formed combines a first substrate, and a TFT and a multilayer pixel electrode composed of the transparent electrode and the reflective electrode are formed on the first substrate. Then, the liquid crystal layer Inserted between the first substrate and the second substrate to complete the reflective and transmissive LCD. 31 574565 玖 Description of the invention According to the fifth embodiment of the present invention, there is not enough external light source In indoor or dark places, reflective and transmissive LCDs operate in transmissive mode, and use built-in light sources to display images. Outdoors or in places with high illumination, reflective and transmissive LCDs operate in reflective mode, and reflect by external light sources. The image is displayed by the incident light. In addition, no asymmetric mask is used to form an asymmetric net carving pattern, thereby increasing the reflectance and ensuring the viewing angle range in a specific direction. According to the specific embodiment of the present invention, the transparent electrode 23 is provided at Below the reflective electrode 1022 in a multilayer pixel electrode composed of a transparent electrode and a reflective electrode. However, in another specific embodiment, the transparent electrode 230 is disposed above the reflective electrode 220 of the multilayer pixel electrode. Although the details of the present invention have been described However, it must be understood that various changes, substitutions and modifications can be made without departing from the essence and scope of the present invention as defined by the scope of the attached patent application. 15 [Simplified Description of Drawings] Figures 1A to 1C show the basis for the cross-section view. Exposure to the organic insulating layer: The relief side drawing of the organic insulating layer is changed; FIG. 2 is a first embodiment of the present invention. In the embodiment, a cross-sectional view of a reflective LCD; 20 FIG. 3 is an enlarged view of the relief pattern of FIG. 2; FIGS. 4A to 4E are cross-sectional views showing a method of manufacturing the reflective LCD of FIG. 2; Line diagram showing the change of the reflectance of the organic insulating layer according to the exposure of the organic insulating layer irradiated; 32 574565 Kan, description of the invention Figure 6 is a line diagram showing the basis of the exposure of the organic insulating layer to the organic insulating layer. The slope change of the relief side drawing; Figure 7 is a line graph showing the change of the black and white reflectance of the organic insulating layer according to the exposure amount of the organic insulating layer; Figure 8 is a line graph showing the The exposure ratio of the organic insulating layer contrast ratio changes; Figure 9 is a cross-sectional view of a reflective LCD according to a second embodiment of the present invention; Figure 10 is a plan view of the relief pattern of Figure 9; Figure 11 is Figure 9 The enlarged sectional view of the relief pattern in the figure; FIGS. 12A to 12C are sectional views showing the manufacturing method of the reflective LCD of FIG. 9; and FIG. 13 is a sectional view showing the LCD according to the third embodiment of the present invention. Float 14A is a sectional view showing a method for forming a relief pattern of an LCD according to a fourth embodiment of the present invention; and FIGS. 15A and 15B are sectional views showing a fifth embodiment according to the present invention For example, the manufacturing method of reflective and transmissive LCD. 33 574565 发明 Description of the invention [Representative symbols for main elements of the drawing] 10 ... Organic insulating layer 230 ... Transparent electrode 10a-c ... Exposed area 250, 300 ... Substrate 12a-c ... Relief side Drawing slope 260, 320 ... Orientation film 100 ... Insulating substrate 270 ... Sealing line 105 ... Gate 280 ... Liquid crystal layer 110 ... Gate insulating film 305 ... Insulating substrate 115 ... Active pattern 310 ... Color filter 120 ... ohmic contact layer 315 ... common electrode 125 ... source 325 ... phase difference plate 130 ... drain electrode 330 ... polarization plate 135 ... embossed adjustment pattern 350 ... LCD panel 200 ... thin film transistor 400 ... bottom side, reference line 210 ... organic insulating layer 410 ... tangent line 212, 214, 216 ... area 450, 500 ... photomask 212 ... slot 500 ... reflection ratio Change line diagrams 214, 216 ..... convex part 600 ... relief slope change line diagram 215 ... contact hole 600 ... gap mask 216a ... non-steep relief side drawing 700 ... white and black reflectance change 216b ... Steep relief side line drawing 217 .. Groove 220 .. Reflective electrode 800 ... Contrast ratio change line Fig. 34

Claims (1)

The scope of the patent application is revised. Period: 换. No. 91125135 Patent Application Amendment of the Patent Scope Amendment 1 · A liquid crystal display device includes: a first substrate, a pixel array is formed on the first substrate; a second substrate, It faces the first substrate;-a liquid crystal layer, which is interposed between the first and second substrates; a, e, and p-layers, which are formed on the first substrate, a plurality of first regions, and a plurality of The second region is formed on the surface of the insulating layer. Each of the tenth and second regions has a height difference with respect to each of the-regions, and the individual reference lines of the-regions form an angle of 5 to 15 degrees with respect to the tangents of the individual second regions. And the reflective electrode is formed on the insulating layer, and the reflective electrode has the same surface structure as the insulating layer. 2. The liquid crystal display device as claimed in the first item of the patent application, wherein each of the first and second regions has a notch shape lower than that of each of the second regions, and each of the second regions has a shape of each convex portion higher than that of the first region. . 3. A liquid crystal display device comprising a first substrate, a pixel array formed on the first substrate; a first substrate facing the first substrate; a liquid crystal layer between the first and the first substrate; Between the second substrates; and, edges θ are formed on the first substrate, a plurality of first regions and a plurality of second regions are formed on the surface of the insulating layer, and each second region is highly different from each of the first regions. The first reference line of the first zone forms an angle of 5 to b degrees with respect to the tangent line of the second zone; 35 574565 Pick up and apply for patent fg: reflective electrode, which is formed on the insulating layer, the reflective electrode has The insulation layer has the same surface structure; and a relief adjustment pattern is formed under the insulation layer. The side of the second area is formed in a non-proprietary manner by facing the relief adjustment pattern of the second area, and the substrate is raised in a specific direction. ratio. … Ran Fang 4 .: The liquid crystal display device that declares the third crime of the patent, where more than 10%: the first tangent line of the second zone is respectively formed as the 8th of the 10th zone and the second zone's reference line. Each reference line of the tangent phase 'product forms an angle greater than 11 degrees. 5. The liquid day-and-day display device of the third member in the scope of the patent application, wherein the relief pattern has an island shape. 6. The liquid crystal display device according to item 3 of the patent application, wherein the relief adjustment pattern is formed below the insulating layer to face the first region, and the second region is adjacent to the first region. 15 7. The liquid crystal display device according to item 3 of the patent application, wherein each of the first regions has a groove shape lower than that of each of the second regions, and each of the second regions has a shape of a convex portion higher than that of the first region. . 20 8 · The patent application is called the LCD device of item 7 of the patent, in which the first area has Yudiao. The notch of the pattern of Zhou 1 below the first region is deeper than the notch of the first region without the relief adjustment pattern below the first region. 9. The liquid crystal display device according to item 7 of the patent application scope, wherein at least all the grooves are formed on the second area by a relief adjustment pattern ', and the relief adjustment pattern is provided below the second area. 10. If the application scope of the patent application is liquid, at least all of the grooves in the second zone 36 574565 are located in the first zone. 1. The liquid crystal display device according to claim 3 of the patent application, wherein the relief adjustment pattern includes a reflective metal layer. 12. The liquid crystal display device according to item 3 of the patent application scope, wherein the pixel array 薄膜 J comprises a -thin film transistor 'which has a gate, a gate insulation layer, an active layer, a source and a drain. 13. The liquid crystal display device according to claim 3, wherein the relief adjustment pattern is formed by the same layer of the source electrode and the non-polar electrode. 14. A liquid crystal display device, including a first substrate, a pixel array formed on the first substrate, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates. Between the substrates; 15. The edge layer is formed on the first substrate. A plurality of first regions and a plurality of second regions are formed on the surface of the insulating layer. Each second region is opposite to each of the first regions. The difference in height is 5 degrees to the reference line of the individual _ zone relative to the tangent of the individual second zone. Degree of angle; transparent electrode 'which is formed on the insulating layer; reflective electrode' which is formed on the transparent electrode, the reflective electrode has an opening, and a part of the transparent electrode is exposed through the opening of the gate of the gate, and the 20-relief The adjustment pattern is formed under the insulating layer and on the side of the second region. The adjustment pattern is formed in an asymmetric manner facing the relief adjustment pattern in the second region, thereby increasing the substrate ratio in a specific direction. Forming a pixel array on a first substrate; 15 • -a method for manufacturing a liquid crystal display device, the method comprising: 37,574,565; applying for a patent to form an insulating layer on the first substrate; and exposing and developing the insulating layer And forming a plurality of first regions and a plurality of second regions on one surface of the insulating layer, so that each second region is highly different from each of the first regions, and by adjusting the exposure amount, each of the five first regions is benchmarked The lines are formed at an angle of 5 to 15 degrees with respect to the tangent of each second region; forming a reflective electrode having the same surface structure as the insulating layer; forming a second substrate facing the first substrate; and forming a liquid crystal layer between Between the first and second substrates. H) 16. The method according to item 15 of the patent application, wherein the exposure amount is adjusted by at least one of the exposure time and the power position supplied to the exposure equipment. Π · The method according to item 15 of the scope of patent application, further comprising hardening the insulating layer by slowly increasing the temperature after the developing of the insulating layer. 15 1 8 · A method of manufacturing a liquid crystal display device, the method includes: forming a pixel array on a first substrate; forming an insulating layer on the first substrate; and forming a plurality of first insulating layers by exposing and developing the insulating layer. One area and a plurality of second areas are on a surface of the insulating layer, so that each second area 20 is highly different from each first area. After adjusting the exposure, the baseline of each first area is relative to each first area. The tangent line of the two zones is formed at an angle of 5 to 15 degrees; a reflective electrode having the same surface structure as the insulating layer is formed; a second substrate is formed to face the first substrate; a liquid crystal layer is formed. Between the first substrate and the second substrate; and before forming the insulating layer, a symmetrical side is formed on the surface of the second region by forming a relief adjustment pattern facing the second region, and the reflection ratio in a specific direction is raised. 19. The method of claim 18, wherein the relief adjustment pattern has an island shape. / 20 · The method of claim 18 in which the relief adjustment pattern is formed / formed under the insulating layer to face the first region, and the second region is adjacent to the first region. 21. If the liquid crystal display device according to item 18 of the scope of patent application, wherein the first groove has a relief adjustment pattern under the first area than the first groove without a relief adjustment pattern under the first area The groove is deeper. 22. The liquid crystal display device according to item 18 of the patent application scope, wherein at least-the notch is formed on the second region by a relief adjustment pattern, and the relief adjustment pattern is disposed below the second region. 23. The method of claim 18, wherein the relief adjustment pattern includes a reflective metal layer. The pixel array includes a gate insulating layer, an active layer 24. As described in the patent application No. 8 method, a thin film transistor having a gate, a layer, a source, and a drain. The relief adjustment pattern 25. The method according to item 24 of the patent application scope, which comprises: forming the same layer of the source electrode and the drain electrode. 26 · —A method for manufacturing a liquid crystal display device, forming a pixel array on a first substrate, 574565, and applying for a patent to form an insulating layer on the first substrate; using a gap cover 'through exposure and development of the insulating layer Forming a plurality of first regions and a plurality of second regions on the surface of the insulating layer, so that each second region has a height difference from each of the first regions, and each second region has an asymmetric side drawing; A reflective electrode with the same surface structure as the insulating layer; forming a second substrate facing the first substrate; and forming-a liquid crystal layer interposed between the first and second substrates. π As in the method of applying for the scope of patent application No. 26, the [zone and the second zone are formed by the following steps: a gap mask is set on the insulating layer; and a full exposure process through the-zone is passed through the third zone. The first- and second-regions are formed by performing general exposure processing on the first part of the slope having a steep mountain slope, and performing the slit exposure processing on the second portion of the second region having a slope with a non-sharp mountain slope. 28 · —A method of manufacturing a liquid crystal display device, the method comprising: forming a pixel array on a first substrate; forming an insulating layer on the first substrate; and forming a plurality of first layers by exposing and developing the insulating layer Zone 20 and a plurality of second zones are on one surface of the insulating layer, so that each second zone is highly different from each of the first zones. After adjusting the exposure, the baseline of each first zone is relative to each of the first zones. The tangent of the two zones is formed at an angle of 5 to 15 degrees; forming a transparent electrode on the insulating layer; 40 574565 patent application scope forming a reflective electrode on the transparent electrode, the reflective electrode has an opening, and the exposed part is transparent through the opening Forming a reflective electrode having the same surface structure as the insulating layer; forming a second substrate facing the first substrate; forming a liquid crystal layer 5 interposed between the first and second substrates; before forming the insulating layer, forming An embossed adjustment pattern faces the second area to form a symmetrical side drawing on the surface of the second area, thereby increasing the reflectance in a specific direction. 29 · —An electronic display device comprising: a substrate 'forming a pixel array on a remote substrate; an insulating layer formed on a first substrate, a plurality of first regions and a plurality of second regions on the pixel array The regions are formed on the surface of the insulating layer, and each of the second regions has a height difference with respect to each of the first regions. The respective reference lines of the first regions form an angle of 5 to 15 degrees with respect to the tangent of each of the second regions; and , The reflective device has a surface structure 30. an electronic display device conforming to the insulating layer, comprising a substrate 20 forming a pixel array on the substrate; an insulating layer 'which is formed on the first substrate On the pixel array, a plurality of the first regions and a plurality of the second regions are formed on the surface of the insulating layer ^, each of the first regions has a height difference region relative to each of the first regions, and each of the reference lines is relative to each of the second regions. Angle of cut to 15 degrees; 41 574565 I. Patent application range Reflective device, which is formed on the insulating layer to connect the pixel array 丨 " Xuan reflection device has a shape following the shape of the insulating layer Structure; and an embossed pattern adjusting 'system which is formed below the insulating layer, a second region by lines painted side facing the second relief region is formed of adjustable-type pattern, it serves to increase the ratio of a specific direction of the substrate. 31. The electronic display device according to item 3 () of the patent application range, wherein the relief adjustment pattern has an island shape. ίο 32. An electronic display device such as the item 3 () of the Zhongqing Patent, wherein the -tangent lines that are larger than the second area are formed at an angle of 11 degrees to the reference line of the first area; and more than 10% of them The second tangent of the second zone forms an angle greater than ^ degrees with respect to each reference line of the second zone. 3 3. The electronic display device of the 30th member in the scope of patent application, wherein the relief adjustment pattern includes a reflective metal layer. 34 ·-A method of manufacturing an electronic display device, the method comprising ... 15 forming a plurality of pixel arrays on a substrate; forming an insulating layer on the substrate and the pixel array; By exposing and developing the insulating layer, a plurality of first regions and a plurality of second regions are formed on one surface of the insulating layer, so that each of the second regions is highly different from each of the first regions. The reference line of one area is formed at an angle of 5 to 15 degrees with respect to the tangent line of each second area; the forming-reflecting device is to be connected to the pixel array on the insulating layer, and the reflecting device has a surface mussel shaped along the insulating layer.结构。 Structure. 35. The method according to item 34 of the patent application range, wherein the exposure amount is adjusted by at least one of 42 574565, the exposure time of the patent application range, and the power supplied to the exposure device. 36. A method of manufacturing an electronic display device, The method includes: forming a plurality of pixel arrays on a substrate; 5 forming an insulating layer on the substrate and the pixel array; and exposing and developing the insulating layer to form a plurality of first regions and a plurality of second regions on the insulation On the surface of one of the layers, the height of each second area is different from that of each first area. After adjusting the exposure, the baseline of each first area is at an angle of 5 to 10 15 degrees relative to the tangent of each second area. Forming; forming a reflecting device on the insulating layer to connect the pixel array, the reflecting device having a surface structure conforming to the insulating layer; and before forming the insulating layer, forming a relief adjustment pattern to face the second region and A symmetrical side is formed on the surface of the second region, and the reflection ratio of the lift 15 is higher than a specific direction. 37. The method of claim 36, wherein the relief adjustment pattern has an island shape. 38. The method of claim 36, wherein the adjustment pattern of the foreign sculpture includes a reflective metal layer. 20 39 · -A method for manufacturing an electronic display split, the method comprising: forming a plurality of pixel arrays on a substrate; forming an insulating layer on the substrate and the pixel array; using a gap mask through exposure and development of an insulating layer To form a plurality of first-regions and a plurality of second-regions on one surface of the insulating layer, so that each of the 43 and patent-application scopes has a height difference from each of the first regions' and each second-region has Asymmetrical side drawing; reflective electrodes with the same surface structure as the eighty-fourth layer; forming a second substrate facing the first substrate; and forming a reflection skirt on the insulating layer, which has The surface structure follows the insulating layer. 40 · If the 39th patent of the scope of the patent application is applied, the first and second areas are formed by the following steps: 10 Set a slit mask on the insulation layer; First processing, through the first part with a steep slope in the second area, and then processing it quickly and generally + first processing, and through the second part with a non-steep whistle slope for the first part to perform seam _ light processing to form the first -Zone and second zone. Exposure 44