TW563081B - Driving method for thin film transistor liquid crystal display - Google Patents
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563081 五、發明說明(1) 技術 、 本發明係關於一種薄膜電晶體液晶顯示器之驅動方 法’該方法利用無影像信號之空檔期間(vide〇 Bianking) 主入一交流或直流信號,藉以降低加在所有像素上的驅動 電壓大小。 發明之 習知的薄膜電晶體液晶顯示器中,液晶分子之預傾角 (Pre-tilt Angle)是利用IT〇上之配向膜(AHgnment563081 V. Description of the invention (1) Technology. The present invention relates to a driving method of a thin film transistor liquid crystal display. This method uses an AC or DC signal to input a video signal during the neutral period (vide〇Bianking), thereby reducing the application. Driving voltage at all pixels. In the conventional thin film transistor liquid crystal display of the invention, the pre-tilt angle of the liquid crystal molecules is based on the alignment film (AHgnment)
Layer) ’以刮磨(Rubbing)方式刷成傾斜之表面,使覆蓋 於其上之液晶分子在未加任何電壓時,即因其排列 (A1 ignment)特性而變成同向排列,且帶有一預傾角,以 便所有液晶分子,於外加驅動電壓後,能迅速地往同一方 向轉動’因而產生透光率之變化。 當外加一驅動電壓於一像素時,在該像素之液晶 iquid Crystal Capacitor)上會出現一跨壓。參見圖 5均方其搞表二液晶顯示器中,一像素之液晶電容上之跨壓的 舍,、根值VLC⑽s>與該像素之透光率的關係。如該圖所示, 使一像示某一亮度時,其液晶電容之跨壓的均方 到、之間時’幾乎無法使該液晶之透光率產生顯著值之,變於 ,其原因在於,當該跨壓之均方根值小於%時, 曰曰分子而言,幾乎無法使其排列方向有顯著之 而液 1壓的均方根值一旦超抓之後,液晶分子之排列方而该 會隨者該跨壓均方根值之增大而快速變化。根據上述^Layer) 'Brushing into a slanted surface, so that when no voltage is applied to the liquid crystal molecules covered on it, it is aligned in the same direction due to its A1 ignment characteristics, with a preliminary The inclination angle, so that all the liquid crystal molecules can quickly rotate in the same direction after the driving voltage is applied, thus changing the transmittance. When a driving voltage is applied to a pixel, a cross-over voltage will appear on the LCD's liquid crystal capacitor. See FIG. 5 for the mean square. In the second liquid crystal display, the relationship between the root voltage VLC⑽s > and the light transmittance of the pixel in the liquid crystal capacitor of a pixel is shown. As shown in the figure, when one image shows a certain brightness, the mean square of the voltage across the liquid crystal capacitor is between, and it can hardly make a significant value of the light transmittance of the liquid crystal. The reason is that When the root-mean-square value of the trans-pressure is less than%, it is almost impossible to make the arrangement direction significant for the molecules. Once the root-mean-square value of the liquid 1 pressure is exceeded, the arrangement of the liquid crystal molecules should be It will change rapidly with the increase of the root mean square value of the voltage. According to the above ^
第5頁 五、發明說明(2) 人可將圖5中的VR定義為.臨界電壓。 如上所述,習知的薄膜電晶體液晶顯示器中,液晶分 子之預傾角完全由I TO表面上之配向膜的傾斜面所控 要獲得高傾斜角度,且傾斜面一致之配向膜,在製1造上非 常困難,因此,上述臨界電壓必然存在。而液晶電之 跨壓在0到臨界電壓Vr的範圍變化時,對於像素之 幾乎沒有顯著之影響,故若能降低臨界電壓%的大小,則 Z降:加:像素之外加驅動電壓的大小,而有效地降低成 個像ΐ進像;列包含有複數 壓,則整體製造成本象=:::::低其外加的驅動電 發明概要 干ί i Π ’本發明提出-種薄膜電晶體液晶顯 由;= = =器於無影像信 ⑻㈣K 一…t〇r)之電:二基上上各像素的儲存電容 一電壓信號,萨而少々八通電極或液晶之對向電極注入 故Ϊ降丄== 象素之液晶上預先產生-個電壓, 降低驅動電壓之臨界雷厭之驅動電壓的大小,尤其可大幅 驅動器積體電路(Data f,因而可以採用較低電壓之資料 為避免各像素rveF 。 吾人可使連接至各像蚤、電晶體的漏電(TFT Leakage), 保持不變,方法為於、$電晶體源極的像素電極電位儘量 反之電壓信號於薄膜^影像信號之期間,分別注入正負相 彳、電晶體基板上各像素的儲存電容之共 五、發明說明(3) 通電择與液晶之 電極電位所產生 儘量不變。 對向電極, 之效果可相 此正負相反之電壓信號對像素 互抵消,以維持像素電極電位 體基板上各像素的 的電壓信號可為交 ’則.·兩直流信號在 需接近零,以避免 影響其特性。 液晶顯示器之驅動 Gate之連接方式, 條掃描線。同樣是 線或液晶之對向電 上產生一個電壓值 儲存電容之共 流信號或直流 複數個無影像 各像素之液晶 方法亦可應用 ’亦即各像素 在無影像信號 極注入電壓信 上述注入於薄膜電晶 通電極f液晶之對向電極 仏號,砮為直流信號的話 信號之空檔期間的平均值 受到長時間之直流電壓而 本發明之薄膜電晶體 於 S t 〇 r a g e C a p a c i t 〇 r 〇 n 之儲存電容連接到相鄰一 之期間,於相鄰一條掃描 號,藉而在各像素之液晶 鼓佳實施例之詳細説明 圖1,表示根據本發明之薄膜電晶體液晶顯示器之工 作原理的示意圖,#中主要包含:一像素陣列u、一掃描 線驅動電路13及一信號線驅動電路12。像素陣列n包含複 數個像素14 ’母一像素之驅動方式如下所述:&為第 < 列 的掃描線,當此掃描線為高電位時,該掃描線上之複數電 晶體呈導通(ON)狀態,此時D!、D2、d3〜Dn等信號線之電 位,將寫入該等電晶體的源極(亦即該像素電極),使得液 晶電容(cLC)上出現跨壓’當掃描線01返回低電位狀態後, 對應的電晶體變為切斷(OFF)的狀態。然後下一條掃描線 h變成高電位,重覆下一階段的驅動程序。 563081 五、發明說明(4) 其中’Pi為薄膜電晶體基板上各像素的儲存電容之共 通電極、P2為液晶之對向電極,一般即為彩色渡光3 (Color Filter)基板上之IT0電極。Cst為儲存電容、°c為 液晶電容。 LC " 圖2表示本發明所採用之薄膜電晶體液晶顯示器之驅 動電壓的方式,與習知之驅動電壓方式之比較示意圖。為 便於說明’使用習知驅動電壓方式之Pi和&電極,分別以 PlA和4表示;而使用本發明驅動電壓方式之Ρι和匕電極, 則分別以P1B和PZB表示之。習知之驅動電壓方式_般係”將 P1A和L連接在一起,並以一直流電壓驅動,如圖2 PZA所示,其中VP1A = Vm。另一方面,本發明之驅動 式··在薄膜電晶體液晶顯示器之有影像信號期間21, P2B之驅動電壓方式與習知技藝一致。但在薄膜電晶體。曰 顯不器之無影像信號之空檔期間22,可分別於匕和P 交流或直,信號,此交流或直流信號對每一 ^來 效fγ在其液晶電容上產生—㈣壓值 與刖人此像素被資料信號線寫入的電壓相加,其液曰電 容上出現的電即為該施加的電壓與 寫入的電壓之和。 貝科“號線 本發明之薄膜電晶體液晶顯示器,其 方式之工作原理的示意圖, 種15動電壓 主要不同之處,是儲存電容C直不。其一與第;實施例 如第一條掃描線…上各像素之灯儲f 下一條掃插線。例 描線G2,掃描線g2上各像素储子广CsT連接到第二條掃 合像素之錯存電容CST連接到第三條掃 563081 五、發明說明(5) 描線g3,其餘類似。此種連接方式稱之為storage Capacitor on Gate。其中,某一條掃描線上各像素之 存電容係連接到前一條或下一條掃描線上,在本發明之— 施例中是採用儲存電容連接到下一條掃描線之方^。 貫 圖4表示本發明之薄膜電晶體液晶顯示器,採用 Storage Capacitor on Gate之驅動電壓的方式,與習知 之驅動電壓方式之比較示意圖。為便於說明,使用習% °之 驅動電壓方式之A和&電極,分別以‘和匕表示;而使°用 本發明之驅動電壓方式之G2和5電極,則分別以&和心表 不之。習知之驅動電壓方式係以一直流電壓Vf^驅動對向 電極匕,如圖4之匕所示。至於CST之共通電極,係連接到 下一條掃描線&,因此其上之信號同於該下一條 上出現的信號,如圖4之‘所示。另一方面,本發明之^ ^電t方式·在薄膜電晶體液晶顯示器之有影像信號期間 二,動電壓方式與習知技藝一致。但在薄膜電晶體液晶 ^裔之無影像信號之空檔期間22,本發明採用Storage 2 = ,Gate之方式,分別於‘和b注入交流或直 二έ號,此交流或直流信號將對每一像素所帶來的效果, 就是在其液晶電容上產生一個電壓值,在此不加贅述。 ♦=过所採用的Storage Capacitor on Gate 之方式, g保=在薄膜電晶體液晶顯示器之無影像信號之空檔期 1 ^ ΐ在下一條掃描線上的電位,不會導致該掃描線所對 應的薄膜電晶體導通。 圖2中Ρ1Β及心或圖4中g2B及ρ2Β之電壓信號,對液晶所Page 5 V. Description of the invention (2) One can define VR in Figure 5 as the critical voltage. As described above, in the conventional thin film transistor liquid crystal display, the pretilt angle of the liquid crystal molecules is completely controlled by the inclined surface of the alignment film on the TO surface. To obtain a high inclination angle, and the alignment film with the same inclined surface, It is very difficult to make it, so the above-mentioned threshold voltage must exist. When the cross voltage of the liquid crystal cell changes from 0 to the threshold voltage Vr, there is almost no significant effect on the pixel. Therefore, if the threshold voltage% can be reduced, then Z drop: plus: the driving voltage outside the pixel, And effectively reduce the image into a single image; the column contains a plurality of pressure, the overall manufacturing cost image = ::::: low the sum of the additional driving electric invention summary dry i Π 'proposed by the present invention-a thin film transistor liquid crystal The display voltage is equal to the power of the image-free signal (K1 ... t〇r): the storage capacitance of each pixel on the two bases is a voltage signal, which is reduced by the injection of the eight-way electrode or the counter electrode of the liquid crystal.丄 == A voltage is generated in advance on the liquid crystal of the pixel, which reduces the threshold voltage of the driving voltage. In particular, the drive voltage of the integrated circuit (Data f) can be greatly driven. Therefore, lower voltage data can be used to avoid each pixel. rveF. We can keep the leakage current (TFT Leakage) connected to various flea and transistors, the method is, the pixel electrode potential of the transistor source as far as possible and the voltage signal in the film ^ image signal period, respectively The positive and negative phases, the storage capacitance of each pixel on the transistor substrate, a total of five, the description of the invention (3) The electrification and the potential of the liquid crystal electrode are as constant as possible. The effect of the counter electrode can be positive and negative voltage signals. The pixels cancel each other to maintain the voltage signal of each pixel on the substrate of the pixel electrode potential body. The two DC signals need to be close to zero to avoid affecting its characteristics. The connection method of the LCD drive gate Scanning line. The same method is used to generate a voltage value of the storage capacitor's common current signal or the direct current of multiple liquid crystals without pixels on the opposite side of the line or liquid crystal. The above-mentioned counter electrode 液晶 of the liquid crystal injection electrode f is injected into the thin film transistor, and the average value of the signal during the gap period is a direct current voltage when the signal is a direct current signal. The thin film transistor of the present invention is 〇r 〇n The storage capacitor is connected to the adjacent one, and the adjacent scanning number is used, so that the liquid crystal of each pixel Detailed description of the drum-best embodiment FIG. 1 is a schematic diagram showing the working principle of a thin film transistor liquid crystal display according to the present invention. # Mainly includes: a pixel array u, a scanning line driving circuit 13 and a signal line driving circuit 12. The pixel array n includes a plurality of pixels. The driving method of a mother pixel is as follows: & is the scan line of the < column, and when the scan line is at a high potential, the plurality of transistors on the scan line are turned on (ON ) State, at this time, the potentials of the signal lines such as D !, D2, d3 ~ Dn will be written into the source of the transistors (that is, the pixel electrode), so that a voltage across the liquid crystal capacitor (cLC) appears when scanning When line 01 returns to the low potential state, the corresponding transistor is turned off. Then the next scan line h goes high, repeating the driver in the next stage. 563081 V. Description of the invention (4) where 'Pi is the common electrode of the storage capacitor of each pixel on the thin film transistor substrate, and P2 is the opposite electrode of the liquid crystal, which is generally the IT0 electrode on the color filter 3 substrate. . Cst is the storage capacitor and ° c is the liquid crystal capacitor. LC " Fig. 2 is a schematic diagram showing a comparison of a driving voltage method of a thin film transistor liquid crystal display used in the present invention with a conventional driving voltage method. In order to facilitate the description, Pi and & electrodes using a conventional driving voltage method are denoted by PlA and 4, respectively, and P1 and Dz electrodes using a driving voltage method of the present invention are denoted by P1B and PZB, respectively. The conventional driving voltage mode_general system "connects P1A and L together and drives with DC voltage, as shown in Figure 2 PZA, where VP1A = Vm. On the other hand, the driving mode of the present invention ... The LCD LCD has an image signal period 21, the driving voltage method of P2B is consistent with the conventional technology. However, in the thin film transistor. The display device has no image signal interval 22, which can be exchanged directly with D and P, respectively. Signal, this AC or DC signal is generated on its liquid crystal capacitor for each ^ effect-the voltage value is added to the voltage written by the data signal line of this pixel, and the electricity appearing on the liquid capacitor is It is the sum of the applied voltage and the written voltage. The schematic diagram of the working principle of the thin film transistor liquid crystal display of the present invention by Beco "Line" is the main difference between the 15 dynamic voltages and the storage capacitor C. . The first and the first; the embodiment, such as the first scanning line, the lamp of each pixel stores f the next scanning line. Example Draw line G2, the pixel capacitor CsT of each pixel on scan line g2 is connected to the stray storage capacitor CST of the second scan pixel and connected to the third scan 563081 V. Description of the invention (5) Draw line g3, the rest are similar. This connection method is called storage capacitor on gate. The storage capacitance of each pixel on a certain scanning line is connected to the previous or next scanning line. In the embodiment of the present invention, a storage capacitor is used to connect to the next scanning line ^. FIG. 4 is a schematic diagram showing a comparison of a driving voltage method of a storage capacitor on gate and a conventional driving voltage method of a thin film transistor liquid crystal display of the present invention. For the convenience of explanation, the A and & electrodes using the driving voltage method of% ° are represented by 'and dagger respectively; while the G2 and 5 electrodes using the driving voltage method of the present invention are expressed by & and the heart watch, respectively No. The conventional driving voltage method uses a DC voltage Vf ^ to drive the counter electrode dagger, as shown in FIG. 4. As for the common electrode of CST, it is connected to the next scanning line & therefore, the signal on it is the same as the signal appearing on the next one, as shown in Figure 4 '. On the other hand, the electric method of the present invention is in the period during which the thin film transistor liquid crystal display has an image signal. The dynamic voltage method is consistent with the conventional technique. However, in the gap period of the thin film transistor liquid crystal LCD without image signal 22, the present invention adopts the method of Storage 2 =, Gate, and injects AC or straight two numbers at 'and b, respectively. This AC or DC signal will The effect brought by one pixel is to generate a voltage value on its liquid crystal capacitor, which will not be repeated here. ♦ = Exceeding the method of Storage Capacitor on Gate, g warranty = In the thin film transistor liquid crystal display, there is no image signal gap period 1 ^ The potential on the next scanning line will not cause the corresponding film of the scanning line The transistor is turned on. The voltage signal of P1B and the core in FIG. 2 or g2B and ρ2B in FIG.
第9頁 (1) 563081 五、發明說明(6) 產生的有效驅動電壓vG計算如下··Page 9 (1) 563081 V. Description of the invention (6) The effective driving voltage vG generated is calculated as follows ...
上的預加均方根電壓(VRMS )計算如下The pre-added root mean square voltage (VRMS) is calculated as
因此及4或gzb及匕之電壓信號,加諸於所有 箱^ a +丄》各抑/ ” ^ ^ (2)Therefore, the voltage signals of 4 or gzb and dagger are applied to all boxes ^ a + 丄》 each suppression / "^ ^ (2)
、上式中τ為每一無影像信號之空檔期間中,電壓信號 /主入之期間,TFRAME則為每一影像圖框更新(v丨de〇 JIn the above formula, τ is the period during which there is no image signal, and the voltage signal / main input period, TFRAME is updated for each image frame (v 丨 de〇 J
Refresh Frame)之期間。 為=薄膜電晶體漏電之問題,則可使像素之電 ί H ί ί電晶體的源極電位)儘量保持不,,吾人可 ί ί; Ϊ : : f Clc與儲存電容Cst之電容值大小比例關係,於 ;广;P〇9間ώ,分別注入正負相反之信號於電極P1B和/ ,和P :圖2與圖4之實施例中注入 ; 減少…波時:'易正弦波等波形,以Refresh Frame). For = thin film transistor leakage problem, you can make the pixel's electricity (H H ί transistor potential) as far as possible, I can ί; Ϊ:: f Clc and storage capacitor Cst capacitance value ratio Relations, Yu; Guang; P09, respectively, inject positive and negative signals into the electrodes P1B and /, and P: injected in the embodiment of Figure 2 and Figure 4; reduce the wave time: 'easy sine wave and other waveforms, To
及P2B或G2B及P2B上各像辛^ 7心變化,所可能造成於p1B 產“面“之素之各阻延遲⑽一)不同,而 加於電極P1B及L或(^及? 唯須滿足長時期的平均偵2B ,彳°唬亦可為直奴信號, 間之平均值)接近零之條卩數個無影像信號之空檔期 號之空檔期間,加入正電=如於第一圖框之無影像信 之無影像信號之空檔期n ^直流信號,則可於下一圖框 間’加入一負電壓之直流信號。And P2B or G2B and P2B each have a change in symmetry, which may cause the delay of each element of the "face" element of p1B to be different. However, the electrodes P1B and L or (^ and? The long-term average detection is 2B. 彳 ° can also be a direct slave signal, and the average time) is close to zero. During the gap period of several gap periods with no image signal, add positive electricity = as in the first If there is no picture signal in the picture frame and no picture signal gap n ^ DC signal, a negative voltage DC signal can be added between the picture frames.
第10頁 563081 五、發明說明(7) 值得注意者,根據本發明之薄膜電晶體液晶顯示器之 驅動方法,亦可應用於不具有彩色濾光器之對向電極的 IPS(In Plane Switching)型液晶顯示器,此種情況下係 在無影像# 5虎之空播期間’由各像素之共通電極(CommonPage 10 563081 V. Description of the invention (7) It is worth noting that the driving method of the thin film transistor liquid crystal display according to the present invention can also be applied to an IPS (In Plane Switching) type without a counter electrode having a color filter. LCD display, in this case no image # 5 Tiger's air-during period 'by the common electrode of each pixel (Common
Electrode)或相鄰一條知描線(Common Electrode on Gate的情況)注入交流信號或直流信號,亦可達成相同的 效果’在此不加贅述。 再次 晶電容Cu 透光率與 又與加在 由加於其 之均方根 的變化。 驅動器積 動電壓的 發明之# 參考圖5 上之跨壓 其液晶分 液晶上之 上之電壓 電壓範圍 本發明藉 體電路所 醮界電壓 果 ’一彳冢京所顯示之亮度係由該像素之液 的均方根值VLC⑽S)所決定。由於液晶之 子的傾斜角有關,而液晶分子的傾斜角 均方根電壓有關,所以液晶之透光率乃 總和的均方根值所決定,其中在〇到% 内,幾乎無法使液晶產生顯著之透光"率 由加入上述之預加的電壓,可降低資料 需提供給該像素之驅動電壓,尤其是驅 (相當於圖5中的Vr)可大幅降低。 本發明提供一種薄膜雷曰贼Electrode) or an adjacent known trace (in the case of the Common Electrode on Gate) injected AC signal or DC signal can also achieve the same effect. The transmissivity of the crystal capacitor Cu is again the same as the change in the root mean square added to it. The invention of the driver's accumulated voltage #Refer to Figure 5 for the voltage across the liquid crystal and the liquid crystal on the liquid crystal. The brightness voltage displayed by the circuit of the present invention is based on the brightness of the pixel. Liquid root mean square value (VLC⑽S). Since the tilt angle of the son of the liquid crystal is related, and the root-mean-square voltage of the tilt angle of the liquid crystal molecules is related, the light transmittance of the liquid crystal is determined by the rms value of the sum, and within 0 to%, it is almost impossible to make the liquid crystal produce a significant By adding the above-mentioned pre-applied voltage, the transmission rate can reduce the driving voltage that data needs to provide to the pixel, especially the drive (equivalent to Vr in FIG. 5) can be greatly reduced. The invention provides a thin film thief
其可降低薄膜電晶體液晶顯;:d”器之驅動方法’ 動電壓,尤可以大幅降低驅動電壓之臨:::像素上的II 使用較低電壓之資料駆動 β界電£。如此,yIt can reduce the driving voltage of thin film transistor liquid crystal display :: d ”device ’s driving voltage, especially the driving voltage can be greatly reduced. :: II on the pixel uses lower voltage data to drive the β boundary voltage. So, y
蔽义士 貝τ十·勳器積體電路0 —加A A A 壓之積體電路,其成本較低, 奴而S,較低屬 體液晶顯示器之整體成本。- 务明可降低薄膜電產 在發明詳細說明中所提 出之八體的貫施態樣或實施命The righteous benedictor integrated circuit 0 — integrated circuit with A A A voltage, its cost is lower, and S, the lower the overall cost of the LCD. -Be sure to reduce the thin-film electricity generation
第11頁 563081 五、發明說明(8) 僅為了易於說明本發明之技術内容,而並非將本發明狹義 地限制於該實施例,在不超出本發明之精神及以下之申請 專利範圍之情況,可作種種變化實施。Page 11 563081 V. Description of the invention (8) Only for easy explanation of the technical content of the present invention, and not to limit the present invention to this embodiment in a narrow sense, without exceeding the spirit of the present invention and the scope of patent application below, Various changes can be implemented.
第12頁 563081 圖式簡單說明 圖1表示根據本發明之薄膜電晶體液晶顯示器(TFT LCD)之工作原理的示意圖。 圖2表示本發明之薄膜電晶體液晶顯示器,其驅動電 壓之方式與習知之驅動電壓方式之比較示意圖。 圖3表示根據本發明之薄膜電晶體液晶顯示器(TFT LCD)採用Storage Capacitor on Gate之方式,其工作原 理之示意圖。 圖4表示本發明之薄膜電晶體液晶顯示器採用S t 〇 r a g e Capacitor on Gate方法,其驅動電壓之方式與習知之驅 動電壓方式之比較示意圖。 圖5表示薄膜電晶體液晶顯示器中,一像素之液晶電 容上之跨壓的均方根值νί(:(ΚΜΜ與該像素之透光率的關係。 符號說明 11〜像素陣列 1 2〜信號線驅動電路 1 3〜掃描線驅動電路 1 4〜像素 2 1〜薄膜電晶體之有影像信號期間 22〜薄膜電晶體之無影像信號之空檔期間Page 12 563081 Brief Description of Drawings Figure 1 is a schematic diagram showing the working principle of a thin film transistor liquid crystal display (TFT LCD) according to the present invention. Fig. 2 shows a comparison diagram of a driving voltage method and a conventional driving voltage method of a thin film transistor liquid crystal display of the present invention. FIG. 3 is a schematic diagram showing a working principle of a thin film transistor liquid crystal display (TFT LCD) according to the present invention using a Storage Capacitor on Gate method. Fig. 4 is a schematic diagram showing a comparison between a driving voltage method and a conventional driving voltage method of the thin film transistor liquid crystal display of the present invention, which adopts the Stoga Capacitor on Gate method. FIG. 5 shows the root-mean-square value of the cross-voltage across a liquid crystal capacitor of a pixel in a thin film transistor liquid crystal display νί (: (KM) and the light transmittance of the pixel. Explanation of symbols 11 to pixel array 12 to signal lines Drive circuit 1 3 to scan line drive circuit 1 4 to pixels 2 1 to thin film transistor with image signal period 22 to thin film transistor without image signal period
第13頁Page 13
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Cited By (12)
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US7755587B2 (en) | 2005-06-30 | 2010-07-13 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US7764278B2 (en) | 2005-06-30 | 2010-07-27 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US7782694B2 (en) | 2005-06-30 | 2010-08-24 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US7859928B2 (en) | 2005-06-30 | 2010-12-28 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US7986541B2 (en) | 2005-06-30 | 2011-07-26 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8054710B2 (en) | 2005-06-30 | 2011-11-08 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8188545B2 (en) | 2006-02-10 | 2012-05-29 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8188544B2 (en) | 2005-06-30 | 2012-05-29 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8310478B2 (en) | 2005-06-30 | 2012-11-13 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8339352B2 (en) | 2005-09-09 | 2012-12-25 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8547773B2 (en) | 2005-06-30 | 2013-10-01 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
TWI471846B (en) * | 2005-09-09 | 2015-02-01 | Thales Sa | Matrix type liquid crystal display of the active matrix type |
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2001
- 2001-02-22 TW TW90104113A patent/TW563081B/en not_active IP Right Cessation
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US8547722B2 (en) | 2005-06-30 | 2013-10-01 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US7764278B2 (en) | 2005-06-30 | 2010-07-27 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US7782694B2 (en) | 2005-06-30 | 2010-08-24 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US7859928B2 (en) | 2005-06-30 | 2010-12-28 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US7986541B2 (en) | 2005-06-30 | 2011-07-26 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8054710B2 (en) | 2005-06-30 | 2011-11-08 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8547773B2 (en) | 2005-06-30 | 2013-10-01 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8188544B2 (en) | 2005-06-30 | 2012-05-29 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8310478B2 (en) | 2005-06-30 | 2012-11-13 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US7755587B2 (en) | 2005-06-30 | 2010-07-13 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
US8339352B2 (en) | 2005-09-09 | 2012-12-25 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
TWI471846B (en) * | 2005-09-09 | 2015-02-01 | Thales Sa | Matrix type liquid crystal display of the active matrix type |
US8188545B2 (en) | 2006-02-10 | 2012-05-29 | Seiko Epson Corporation | Integrated circuit device and electronic instrument |
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