TW518662B - Exposure method and exposure device - Google Patents

Abstract

This invention discloses an exposure method and an exposure device which can carry out exposure process with high productivity and accuracy for a large-size substrate having a high flatness. The exposure device EX to expose a substrate P according to the pattern of a mask M by a projection optical system PL is equipped with a detecting device 6 to detect the flatness degree of the substrate P. A controlling device CONT controls the size of the projection region with respect to the substrate P to a specified size based on the detection result by the detecting device 6. The projection region is determined by controlling the illumination region for each mask Ma to Md by a blind part B.

Description

18662 8686pif.doc / 008 A7 B7 Yin Fan, Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs 5. Description of the Invention (I) Field of the Invention The present invention relates to an exposure method and an exposure device. BACKGROUND OF THE INVENTION When a display device such as a personal computer or a television receiver is oriented to be manufactured largely using a liquid crystal display, a mask and a photosensitizer are coated on a glass substrate. And irradiate the photomask with exposure light under a static state, and then transfer the pattern formed on the photomask to a glass substrate by an optical projection system. After that, a step-and-repeat type exposure device is used to sequentially combine the patterns on the glass substrate to form a large screen. However, with the recent trend of pattern miniaturization, the number of openings NA of the optical projection system used in the exposure device has been set larger, and because the number of openings NA has become larger, the focus depth of the optical projection system has been kA / NA2 (where k is a fixed chirp and λ is a wavelength). In addition, when manufacturing a liquid crystal display, the surface (exposure processing surface) of the glass substrate used must have a smaller flatness within the focal depth of the optical projection system. However, since glass substrates are generally manufactured by glass rolling, it is difficult to obtain desired flatness. Therefore, it is difficult to perform exposure processing on all the exposed areas on the surface of the glass substrate within the focal depth of this optical projection system at one time. In the conventional method, the exposure area on the glass substrate is divided into a plurality of small areas by predicting the exposure processing surface on the glass substrate within the focal depth of the optical projection system. After that, the divided areas are exposed separately to apply this paper size to the Chinese National Standard (CNS) Α4 size (210X297 mm) (please read the precautions on the back before filling this page). ·· 18662 8 6 8 6pi f. Doc / 008 b / V. Description of the invention (The divided patterns formed on the glass substrate in the castration area are combined to form the predetermined pattern. Specifically, 'first' Prediction of the segmented area on the glass substrate within the focal depth of the optical projection system, and then set the size of the predicted segmented area separately. Then, design and produce masks with segmentation patterns corresponding to the segmented areas that are set accordingly. Next, use this mask to experimentally expose the glass substrate. Overall, the flatness of the glass substrate due to the lack of flatness of the glass substrate in the divided area of the glass substrate within the focal depth of the optical projection system resulted in a poor pattern. The segmentation area is modified by setting the size of the segmentation area again within the depth of focus. In response to this, the mask of the corrected divided area is set again, and then a re-exposure process is performed to obtain a pattern with a predetermined accuracy in all the exposed areas. However, in this method, a large exposure is first taken on the basis of prediction. After the area is divided into multiple small exposure areas, the exposure process is performed. Therefore, a test exposure process must be performed to reduce productivity or work efficiency. Moreover, after the test exposure process, the focus of the optical projection system is not met. The segmented area within the depth is revised to the new segmented area size within the focal depth according to the forecast setting, so it needs to be revised and printed with the corresponding consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this Page) The mask of the divided pattern of the cut area will further reduce the efficiency. Therefore, in view of the above situation, the object of the present invention is to provide an exposure method and an exposure device for large substrates with large flatness. High productivity and good work efficiency Exposure treatment. This paper size applies + National National Standard (CNS) 8 4 Na (2ΐ〇χ297 公 楚) 518662 8686pif.doc / 008 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (> 1 ) Invention: In order to solve the above problems, the preferred embodiment of the present invention adopts a structure corresponding to FIG. 1 to FIG. 9. The exposure method of the present invention is applicable to the substrate P in the optical projection system PL. An exposure method for exposing the pattern PA, the method includes: detecting the flatness of the substrate P, and then setting the size of the projection area on the substrate p based on the detection result. The exposure device of the present invention is suitable for optical In the projection system PL, an exposure device EX that forms a pattern PA on the substrate P is exposed. This device includes a detection device (6, CONT) and a setting device (CONT, M, B). The detection device (6, CONT) is used to detect the flatness of the substrate ρ. The setting devices (CONT, M, B) set the size of the projection area on the substrate ρ based on this detection result. In the present invention, the flatness of the substrate P is detected, and the size of the projection area on the substrate P is set based on the detection result. For example, when the exposure processing surface of the corresponding substrate P in the projection area is set in the focal depth of the optical projection system PL in a more efficient manner. Therefore, since a better projection area corresponding to the flatness can be set in a more efficient manner, it is possible to perform a highly accurate exposure process in a more efficient manner while achieving high productivity. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the preferred embodiments are described below in detail with the accompanying drawings' as follows: Brief description of the drawings (please read the back first) Please pay attention to this page and fill in this page again) The size of the bound and bound paper is applicable to China National Standard (CNS) A4 (21〇 > < 297 mm) 518662 8686pif.doc / 008 A7 B7 Printed by a consumer cooperative V. Description of the invention (V) Figure 1 shows the overall schematic structural diagram of an exposure device according to a preferred embodiment of the present invention. 2A to 2B are explanatory diagrams of the shielding device. FIG. 3 is a flowchart illustrating an exposure method according to a preferred embodiment of the present invention. FIG. 4 is a flowchart illustrating an exposure method according to a preferred embodiment of the present invention. 5A to 5D are explanatory diagrams showing the exposure method of the first preferred embodiment of the present invention. 6A to 6B are explanatory diagrams showing the flatness of the substrate. 7A to 7D are explanatory diagrams showing an exposure method according to a second preferred embodiment of the present invention. 8A to 8B are explanatory diagrams showing an exposure method according to another preferred embodiment of the present invention. Fig. 9 is a flowchart showing an example of a manufacturing process of a semiconductor device. Description of the drawing symbols: 1: light source 2: elliptical mirror 3a: refractive mirror 3b: refractive mirror 5: laser interferometer 6: focus detection system (detection device) 6a: light projection system 7 (Please read the precautions on the back first (Fill in this page again.) • The paper size of the binding and binding is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) 518662 8686pif.doc / 008 A / B7 V. Description of the invention (f) 6 b · Light receiving system 7: Variable visor 14: opening 15a, light transmission 15b: light reduction 16: light shielding 201, 202, 203, 204, 205, 206, SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, S13, S14, S15, S16, S17: Step AX: Optical axis B: Masking device (setting device) B1: Light source side shielding B2: Optical projection system side shielding

Bn: Standard masking

Bg: Masking glass (setting device) CONT: Control device (detection device, setting device, exposure control device) D, PSTD: Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (Please read the precautions on the back before filling in (This page) EL: Exposure light EX: Exposure device IL: Optical illumination system IU: Optical units M, Ml, M2, M3: Photomask

Ma, Mb, Me, Md, Me, Mf: Dividing reticle (setting device) This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 518662 A7 B7 8686pif.doc / 008 5. Description of the invention (G) MST: Photomask stage P: Glass substrate (substrate) PA: Pattern PA1: Wire pattern (peripheral pattern) PA2: Pixel pattern (repeated pattern) PAa, PAb, PAc, PAd, PAe, PAf: Split pattern PH: Substrate bracket PL: Optical projection system PST: Detailed description of the preferred embodiment of the substrate pedestal First preferred embodiment Below, please refer to the drawings for g exposure of the exposure method and exposure device of the first preferred embodiment of the present invention Bright. Figure 1 does not show the overall structure of the exposure unit. As shown in FIG. 1, the exposure device EX includes an optical illumination system IL, a blinding device B, and an optical projection system PL. The optical illumination system IL illuminates the masks M (Ma to Md) held on the mask stage MST with a light beam from the light source 1. The shielding device B (setting device) is arranged in the optical lighting system IL, and adjusts the opening area of the exposure light EL to define the illumination range of the exposure light EL to the mask M (Ma ~ Md). The optical projection system PL is used to illuminate the exposure light EL on the pattern PA (PAa ~ PAd) of the mask M (Ma ~ Md) and project the image onto the angular glass substrate P (substrate). The overall operation of the exposure device EX is controlled by the control device CONT (setting device, 9 paper sizes applicable to China National Standard (CNS) A4 specifications (210X297 mm) -------- 9 Li-(Please read the back first) (Notes on this page, please fill in this page again), 11 Printed 518662 8686pif.doc / 008 B7 of the Central Standards Bureau Employees' Cooperatives of the Ministry of Economic Affairs (5) Instructions for Invention (ο) Exposure Control Device) as a reference. Furthermore, in the preferred embodiment, the exposure device EX is in a state where the photomask M and the substrate P are stationary, and the substrate P is sequentially stepped repeatedly after exposure in the pattern of the photomask M. Type exposure device. Here, in the preferred embodiment, when the predetermined pattern is transferred on the substrate P, the predetermined pattern is divided into a plurality of parts to form a plurality of divided masks Ma corresponding to each of the divided patterns PAa to PAd. ~ Md, and combining the divided patterns PAa ~ PAd (that is, the screen is continuous) formed on the substrate P through the above-mentioned alternation of the divided masks Ma ~ Md can form a composite pattern on the substrate P. The light source 1 is, for example, an ArF laser excimer laser with an emission wavelength of 193 nm in the g-line (436 nm), h-line (405 nm), i-line (365 nm), and more subtle areas, and an emission wavelength of 157 nm. Fluorine laser (F2 laser), Krypton-dimer laser (Kr2 laser) with an emission wavelength of 146nm, or Argon-dimer laser (Ar2 laser) with an emission wavelength of 126nm. Standard Bureau employee consumer cooperatives Yinfan (please read the precautions on the back before filling out this page) The exposure light EL emitted from light source 1 is focused by the elliptical mirror 2 and then reflected by the mirror 3a of the optical lighting system IL To enter the optical unit IU constituting the optical illumination system IL. The optical unit IU includes a relay lens, an optical integrator for homogenizing the exposure light EL, an input lens for inputting the exposure light EL into the optical integrator, and A plurality of lenses (optical elements) such as a relay lens that condenses the exposure light EL emitted from the optical integrator onto the mask M, and a condenser lens. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 518662 A7 B7 8686pif.doc / 008 V. Description of the invention (¾) (Please read the notes on the back before filling this page) As shown in Figure 1 It is shown that the masks Ma to Md having the respective patterns PAa to PAd are mounted on a mask change 7. The variable reticle 7 is arranged so as to be freely movable above the reticle stage MST, so that the divided reticle Ma to Md can be loaded and unloaded on the reticle stage MST (ioad · unload). The mask M mounted on the variable mask 7 is housed in a mask library (not shown). When the photomask M in the photomask storage room is mounted on the variable photomask 7, the photomask μ is loaded on the photomask MST from a photomask storage room using a loader (not shown). The photomask 7 receives the photomask M on the photomask stage MST, so that the photomask M is mounted on the photomask 7. On the other hand, the mask μ mounted on the variable mask 7 is returned to the mask storage room, that is, when the mask μ from the variable mask 7 is loaded on the mask stage MST, it is not shown in the figure above. The loader moves the mask M on the mask table MST back to the mask storage room. The consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs printed the exposure light EL emitted by the optical unit IU, and after reflecting through the refraction mirror 3b, it was incident on a photomask stage MST that can move in the second-dimensional direction (ie, the χγ direction). Mask M (Ma ~ Md). Furthermore, the exposure light EL passing through the mask M is incident on the optical projection system PL, and is incident on the substrate P through a plurality of lenses (optical elements) constituting the optical projection system PL, and is formed on the surface of the substrate P. Image of the pattern of photomask M. The substrate P is coated on the surface with a photosensitizer and then held on a substrate holder PH. The substrate holder ρn for holding the substrate ρ is set on the substrate pedestal PST. The substrate pedestal PST may be provided to be movable in the XYZ direction or may be provided to be rotatable in the Z-axis direction. What's more, this paper size is also applicable to China National Standard (CNS) 8-4 specification (2lQx297 public director)

Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs $ L 518662 8 6 8 6pi f. Doc / 0 0 8 A7 -----—-—________ V. Description of the invention (0) It can be tilted to the optical axis of the exposure light el It moves in the direction of AX, and when the substrate P is supported, it can be adjusted according to the level (leveHng) of the substrate ρ. The position in the XY plane of the substrate pedestal PST is detected by the laser interferometer 5. On the other hand, the position in the Z direction of the substrate pedestal is detected by a focus detection system 6 (detection device) having a light projection system 6a and a light receiving system 6b. After the detection results of the laser interferometer 5 and the focus detection system 6 are output to the control device CONT, the substrate pedestal PSt will be moved based on the instruction of the control device CONT by the drive mechanism PSTd. Further, the focus detection system 6 detects the position of the surface (exposure processing surface) of the substrate P held on the substrate holder PH to provide information about the position of the substrate P to the control device CONT. The control device CONT moves the substrate pedestal PST via the drive mechanism PSTD based on the detection result of the surface position of the substrate P by the focus detection system 6 before the exposure processing, so that the surface position of the substrate P and the focus of the optical projection system PL The positions match each other. Furthermore, when the substrate P has coincided with the imaging position of the optical projection system PL, the focus detection system 6 does not necessarily need to detect the center position of the projection area of the optical projection system PL on the substrate P. For example, please refer to FIG. 5B. When the patterns of the four divided masks Ma ~ Md are continuously exposed on the substrate P at the same time, the focus detection system 6 detects the position where the substrate P is bonded (that is, The projection position of the X part of the segmented light Qin Ma ~ Md in Fig. 5B), the average position of the detection result is also consistent with the imaging position of the optical projection system PL. Therefore, it is possible to reduce the substrate p -------- ^ install ------- order ------ (Please read the precautions on the back before filling this page) This paper size applies to Chinese national standards (CNS) A4 specification (210X297 mm) 518662 A7 B7 8686pif.doc / 008 5. The line width of the joint part on the description of the invention (\.), To produce a high-quality liquid crystal display. (Please read the precautions on the back before filling in this page.) In addition, the focus detection system 6 (detection device) can detect multiple positions on the surface of the substrate p and input the detection results into the control device CONT. The control device CONT determines the flatness of the substrate P based on a plurality of position information on the surface of the substrate P. That is, only the focus detection system 6 that can detect a plurality of positions on the surface of the substrate P and the control device CONT that obtains the flatness of the substrate P based on the detection results can constitute a flatness detection device for detecting the flatness of the substrate P. Detection device. The shielding device B (setting device) arranged in the optical illumination system IL is used to adjust the illumination range of the exposure light EL to the mask M, and its predetermined size can set the size of the illumination range, and even the optical projection system PL to the substrate The size of the projection area of P. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs

As shown in FIG. 2A, the shielding device B has a light source side shielding B1 and an optical projection system side shielding B2. The light source side shield B1 and the optical projection system side shield B2 are respectively provided with an integrally formed glass blind Bg and a normal blind Bn. The masking glass Bg is used for continuous image exposure processing (repeated exposure), while the standard masking Bn is used for discontinuous image exposure processing. The light source side shield B1 and the optical projection system side shield B2 can be moved in the Y direction of FIG. 2A (the direction intersecting with the optical axis AX of the exposure light EL) by the driving mechanism D driven according to the instruction of the control device CONT. . When the shielding glass Bg and the standard shielding Bn are switched during the exposure process, the light source side shielding B1 and the optical projection system side shielding B2 are respectively at 2A. This paper standard applies to China National Standard (CNS) A4 specifications ( 210X297 mm) 518662 8686pif.doc / 008 ^ '__ B7 _ 5. Explanation of the invention (ll) Move in the Y direction of the drawing. The standard shielding Bn has an opening portion 14 and its surroundings are formed by a light shielding portion 16. A knife-edge (not shown) is provided in the opening 14. In general, the driving mechanism D moves the light source side shield B1 and the optical projection system side shield B2 so that their respective openings 14 are combined to change the size of the opening through which the exposure light EL passes, and then the exposure light EL is adjusted to the mask. Lighting range of M. The shielding glass Bg has a light transmitting portion 15a made of a transparent glass substrate. The periphery of the light transmitting portion 15 a is constituted by the light shielding portion 16. Furthermore, at the boundary between the light-transmitting portion 15a and the light-shielding portion 16, that is, the end of the light-transmitting portion 15a made of a glass substrate is provided with a change in the density of a light-shielding member such as chrome, and steamed. The obtained light reduction portion 15b. The chromium film in the light reduction portion 15b is vapor-deposited on the glass substrate in a dot shape below the size of the analysis limit of the exposure device EX. The density of the dot-shaped chromium film is set by the light transmitting portion. 15a gradually increases toward the light shielding portion 16, so that the light reduction rate of the light reduction portion 15b can be changed. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). The setting of the illumination range of the exposure light EL of the mask M during continuous screen is shown in Figure 2B. The respective shielding glasses Bg and Bg of the light source side shielding B1 and the optical projection system side shielding B2 are obtained by combining the determined quantities. Finally, the driving mechanism D is used to move the light source side shielding B1 and the optical projection system side shielding B2 so that each of the light transmitting portions 15a is adjusted according to the quantitative combination to form the size of the transmitting portion that can transmit the exposure light EL, and then the exposure light EL is adjusted. Illumination range of photomask M. In general, by overlapping exposure of the substrate P in the light reduction area corresponding to the light reduction section 15b, the paper size can be applied to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). Printed by the cooperative 518662 8686pif.doc / 008 B7 _ V. Description of the invention (b) Make the exposure in the entire area of the composite pattern uniform. Furthermore, even if the light reduction portion 15b provided in the horizontal portion of the upper and lower portions as shown in FIGS. 2A to 2B is not provided, the light source side or the optical projection can be used during the exposure process. The glass on at least one side of the system side shields the light quantity distribution generated by the movement of Bg in the lateral direction (Y direction) to form a light reduction area on the projection area. Therefore, when this light reduction area coincides with the substrate P, Make the exposure amount uniform over the entire area of the composite pattern. The light reduction portion 15b that shields Bg by the glass formed by vaporization can be adjusted with a better level of light quantity distribution at the molecular level. In this way, in the continuous picture (repeated exposure), more Uniformity of the exposure amount in all areas of the composite pattern accurately. Therefore, for example, the same partial pattern is repeatedly formed, and the overlapping pattern (pixel pattern) can be more accurately superposed. Next, a method for exposing a pattern formed on the photomask M on the substrate P by using the control device CONT will be described with reference to FIGS. 3 and 4. First, the control device CONT optimizes the projection area so that the exposure area of the substrate P is within the focal depth of the optical projection system PL, that is, determines whether to perform a comprehensive exposure process on the exposure area or to divide the exposure area. The divided area formed by the exposure area is subjected to exposure processing. If so, judge the pattern obtained by this exposure process and its corresponding necessary accuracy pattern. For example, it is necessary to set the resolution of the driver (the pattern programmed in drive0 or the contact hole pattern) -------- IT (Please read the precautions on the back before filling in this education) This paper The scale is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 518662 8686pif.doc / 008 ^ B7 V. Description of the invention (卩) When a pattern is required, it is judged that it needs to be optimized (that is, "yes" (Case). When the resolution determined by the insulating layer or the like is a permissible pattern, it is judged that optimization is not required (that is, the case of "No") (step S1). When the control device CONT judges in step S1 In the case where optimization is required (that is, the case of "yes"), when the necessary pattern is exposed at a predetermined resolution, since the information about the flatness of the substrate P is required, the above-mentioned Data (step S2). On the other hand, when the control device CONT determines in step S1 that the optimization is not required (that is, the case of "No"), the normal exposure operation is started (step S14). ). Next, the control device CONT judges whether the flatness of the substrate P is detected (step S3). When the control device CONT determines in step S3 that the flatness of the substrate P needs to be detected (that is, the case of YES), it will The substrate P to be exposed is loaded on the substrate pedestal PST (step S4). Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). Next, the control device CONT controls the focus detection system. 6 (Detection device) Detects information about the positions of multiple points in the entire exposed area of the substrate P (ie, the entire surface of the substrate P). The library to device CONT uses the detection result of the detection device 6 as a reference to determine the Flatness (step S5). Furthermore, the detection device 6 detects the grid-like position of the entire surface (full exposure area) of the substrate P. On the other hand, the control device CONT determines in step S3 that the flatness of the substrate P is not performed. When testing the degree (that is, the case of "No"), this paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 518662 A7 B7 8686pif.doc / 008 (#) This control device CONT will request information about the flatness of the substrate p in the connected memory device (step S6). Here, the memory device's memory device stores the flatness by the detection device 6 or other Information about the flatness of the substrate p detected by the detection device. The other flatness detection device is, for example, a flatness detection device provided in a code developer adjacent to the exposure device Εχ. In this code development device, The flatness detection device is used to detect the flatness of the substrate P after the development process. Generally, since the shape of each batch (10t) of the substrate P made of the glass substrate is almost the same 'Therefore, it is sufficient to use the flatness detection data of the substrate P after the development process. The control device CONT receives the data on the flatness stored in the memory device (step S7). The control device CONT obtains information on the flatness of the substrate P in step S5 or step S7, and then determines whether or not to perform exposure processing on the substrate P having the flatness. Specifically, are you looking for a substrate? After the difference DEL between the depth of focus and the flatness of the optical projection system PL in the fully exposed area, it is determined whether the difference DEL is greater than a predetermined value 5 (step S8). Here, the predetermined “5” is the default allowable value. Among the factors that have an influence on the exposure processing surface of the substrate P within the focal depth of the optical projection system PL, the result of the numerical calculation covers the substrate P. Factors other than flatness. Specifically, the unevenness of the photosensitive agent on the substrate P, the flatness of the substrate holder PH, the auto-focus accuracy, the confocal error between the autofocus and the optical projection system PL, the optical system This paper size applies Chinese National Standard (CNS) A4 specification (210 × 297 mm) binding I (please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 518662 686Pif.doc / 〇〇 8 A7 B7 V. Description of the invention (! <) When the difference DEL is a predetermined value of 5 or more, the flatness of the substrate P is within the allowable range for the focal depth of the optical projection system PL. The control device CONT performs the normal exposure processing operation when the difference DEL is greater than the predetermined value 値 6 (step S14), and when the difference DEL is less than the predetermined value 値 5, it proceeds to step S9 to obtain that the difference DEL is greater than the predetermined value The projection area for the condition of 値 5. In addition, the entire substrate P may be tilted to obtain a good flatness. For this reason, the control device CONT determines in step S8 that it is necessary to correct the entire level of the substrate P. Specifically, when the plane of the substrate holder PH is ap + biy + CiZ + d ^ O, and a similar plane a2x + b2y + c2Z + d == 0 is obtained according to the flatness information of the substrate p. At this time, the horizontal (ie, cotangent) angle of the substrate pedestal PST at this time is represented by 0, and when 0 satisfies the mathematical formula 1, the control device CONT completes the horizontal correction of the substrate P, and proceeds to step S14. Mathematical formula 1: cos · (Please read the precautions on the back before filling out this page) One pack · Order printed by the Central Consumers 'Bureau of the Ministry of Economic Affairs, printed by the Consumers' Cooperative, or the control device CONT when the above formula is not satisfied or in the steps In the case where the flatness of the approximate substrate is not obtained from the flatness measurement data in S9, according to the level correction required for the approximate plane calculated by each exposure area (for example, 44mmx 44mm), the entire substrate p Horizontal correction. In addition, the control device CONT calculates approximately 18 paper sizes for each exposure area, which are applicable to China ^^ (:: shame) 8 4 specifications (21〇 > < 297 mm) 518662 Printed by the Consumer Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs, 8866pif.d0c / 008 A7 _ B7 V. Description of the invention (丨 (;) In the case of a plane-like situation, the local flatness is eliminated. The special point (X3, y3 'z3) is calculated after the control device CONT in step S9. The following formula can calculate the approximate plane a2 of the special point (X ;, y3, z3) to the exposure area after horizontal correction. 'x + b2'y + c2'z + d' = the distance Η. Math. 2: U — la2 + + C2 Z3 1-/ a2,2 + Z? 2,2 + c2,2 At this time, control The device CONT takes the difference between the focal depth of the optical projection system PL and the calculated distance Η as DEL, and then compares this difference DEL with the predetermined 値 δ. When the difference DEL is large, step S10 is performed. Control device In the case where the difference DEL is smaller than the predetermined value of 5, the CONT sequentially reduces the exposure area (finally up to 10mmx 10mm), and when the difference DEL is greater than the predetermined value δ, set this as the exposure area, and then proceed to step S10. The control device CONT is After the difference DEL is determined to be a predetermined projection area size of 値 6 or more, it is determined whether the The projected area of the obtained size is processed. Specifically, when the substrate P formed by combining the substrates P having a plurality of divided patterns is exposed to a predetermined pattern, it is judged that the projection area having the projection area corresponding to the step S9 is obtained. Is it necessary to change the plurality of masks M of the divided pattern of the size (step S10). When the control device CONT determines in step S10 that the mask M needs to be changed (that is, the case of "yes"), it selects the corresponding step S9. The mask M of the division pattern of the projection area size obtained in the above, and then mount this mask M on the variable mask 7, and then 'will have the predetermined division 19 This paper size applies the Chinese National Standard (CNS) A4 Speaking grid (X 297 male thin) -------- ^ install ------ order ------ (Please read the precautions on the back before filling in this page) 518662 A7 B7 8686pif.doc / 00: 5. Description of the invention (0) The patterned mask M is loaded on the mask stage MST (step S11). (Please read the precautions on the back before filling this page) For example, please refer to Figure 5A, When the substrate P is exposed with a pattern PA formed on the mask μ, the pattern pa is The four divided patterns PAa to PAd as shown in FIG. 5B are formed, and then exposure processing is performed on the masks Ma to Md in which the divided patterns PAa to PAd are respectively formed. The result of the flatness of the substrate P thus detected If the flatness is large (poor) as shown in FIG. 6A, the projection area is set to be smaller directly, so that the exposure processing surface corresponding to the substrate P becomes the focal depth of the optical projection system PL. Inside. Therefore, please refer to FIG. 5C to perform exposure processing on a smaller projection area. For example, the pattern PA is divided into 6 smaller division patterns such as 6 division patterns PAa to PAf, and then each of the division patterns PAa to be used is used. The masks Ma to Mf of the PAf perform exposure processing. To this end, the control device CONT (exposure control device) instructs to change the divided masks Ma to Md held on the variable mask 7 to the divided masks Ma to Mf. In general, the split masks Ma to Md are unloaded from the variable mask 7, and the split masks Ma to Mf are mounted on the variable mask 7. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. On the other hand, when the flatness of the substrate P detected by the detection device 6 is smaller (preferably) as shown in FIG. 6B, FIG. 5B The four division patterns PAa ~ PAd form a division pattern with a larger projection area, and the mask Ma ~ Md can be replaced to perform exposure processing on the substrate P corresponding to this projection area within the focal depth of the optical projection system PL. Normal exposure processing operation. Furthermore, when the flatness of the substrate P is small (preferred) as shown in FIG. 6B, the pattern PA with a larger segmentation pattern can be adjusted to 20 ^ The paper size applies the Chinese National Standard (CNS) A4 Specifications (210X297 mm) 518662 A7 B7 8686pif.doc / 008 V. Description of the invention ((¾) line exposure processing. For example, the 4 divided masks Ma ~ Md held on the variable mask 7 are replaced with the 5D As shown in the figure, the two masks Ma and Mb each having a larger division pattern PAa and PAb. When the control device CONT determines in step S10 that the mask M is not changed (that is, the case of "No"), In the projection area at this time, the focus processing depth of the optical projection system PL cannot cover the exposure processing surface of the substrate P, so a warning is issued (step S15). The control device CONT determines whether to continue after step S15. The predetermined processing (step S16). When the control device CONT determines that the processing is not to be continued (that is, the case of "No"), it ends this series of predetermined processing. The control device CONT determines the load in step 11 The mask M is No is a suitable photomask (step S12). This suitable photomask is, for example, a photomask having a repeated pattern formed from the same part of the pattern. This photomask with a repeated pattern can easily perform a continuous picture with better accuracy. When When the control device CONT determines in step S12 that it is an appropriate photomask (that is, the case of "yes"), it sets the masking device B according to the photomask having the repeated pattern determined (step S13). Finally, The continuous screen is performed, and the shielding glass Bg in the shielding device B is optimally set so that when the substrate ρ is exposed, the peripheral portions of the divided patterns PAa to PAd (PAa to PAf) are joined to each other so that the entire A predetermined pattern PA is formed on the substrate P. On the other hand, the control device CONT judges in step S12 that the Chinese paper standard (CNS) A4 (210X297 mm) is applied to the paper size --------. • Packing ------ Order ------ (Please read the notes on the back before filling out this page) Printed by the Consumers 'Cooperatives of the Central Standards Bureau of the Ministry of Economy Printed by the Consumers' Cooperatives of the Central Standards Bureau of the Ministry of Economy 518662 8686pif d〇c / 008 eight? B7 five When the description of the invention (θ) is not suitable for a photomask (that is, a case of "No"), a warning is issued (step S17). The control device CONT performs a warning after a warning is not suitable for a photomask. It is determined whether to continue processing (step S16). At this time, the exposure processing surface of the substrate ρ corresponding to the projection area is changed to a better and appropriate position within the focal depth (for example, the center 値 within the focal depth), and then used separately The masking glass Bg having each of the divided patterns PAa to PAd (PAa to PAf) is further divided and exposed. For example, the illumination area of the shielding glass Bg corresponding to the exposure light of one division pattern PAa is divided into smaller blocks, and these small regions are bonded to the substrate P. In this way, since the masking glass Bg having a repeated pattern (pixel pattern) in which the same partial pattern is repeated in a row is used, the projection of the substrate P can be exposed in each projection region corresponding to the set appropriate divided region. The processing surface lies completely within the focal depth of the optical projection system PL. Finally, the repeated pattern can also be changed to other parts of the pattern. When the range of desired flatness of the substrate P is wider, the illumination area of the mask M (with a division pattern) is set to be wider. On the other hand, when the range of desired flatness of the substrate P is small, the illumination area of the mask M (with a division pattern) is set to be narrow. When the control device CONT determines that the processing is to be continued in step S16, when the processing is continued using the mask M mounted on the variable mask 7, the process proceeds to step S13 to set the shielding glass Bg. In addition, in step S10, when the control device CONT determines that the exposure processing surface of the substrate P corresponding to the projection area is not at the focal depth 22 of the optical projection system PL ------------------- ir ----- Fee (please read the notes on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) 518662 A7 B7 8686pif.doc / 008 V. Description of the invention (w) (Please Read the precautions on the back before filling in this page.) When exchanging the photomask M within the specified range, you can change the photomask M held by the variable photomask 7 (photomask stage MST) to have a larger-than-expected projection. Mask M of the pattern (divided pattern) of the projection region of the region. Therefore, the mask M having a pattern larger than the desired pattern is used to control the projection area of the mask glass Bg to make the desired projection area (smaller projection area). Finally, among the divided patterns PAa to PAd (PAa to PAf), for example, the illuminated area divided in the shielding glass Bg corresponding to one divided pattern PAa is obtained by further dividing the divided pattern PAa. Printed in the above description by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, in order to detect the flatness of the substrate P, and then use this test result to set the size of the projection area of the substrate P to more accurately and efficiently. Excellent exposure processing. However, when the flatness of the substrate cannot be detected in the conventional technology, the worst case of the flatness of the substrate P is predicted, and the prediction is mainly used to make a mask with a division pattern. Use this The photomask is tested for exposure processing and development processing. When the exposure processing surface of the substrate P cannot enter the focal depth of the optical projection system PL due to the flatness of the substrate P (that is, the resolution of the formed pattern is When the accuracy is lower than the specified accuracy), the segmentation pattern of the photomask needs to be corrected to a smaller structure and then the exposure process is performed again. This operation is relatively inefficient. However, in the present invention, since the flatness of the substrate P is detected first, and the size of the projection area is set based on the detection result, and then the exposure process is performed, there is no need to modify the structure of the conventional photomask or test the exposure. Developing process. In this way, the throughput can be greatly increased, and in the case of high productivity, 23 paper standards are applicable to China National Standards (CNS) 8 4 specifications (21 × 297 mm) 518662 A7 B7 8686pif, doc / 〇〇 5. Description of the invention (> I) Efficiently perform exposure processing with high accuracy. (Please read the precautions on the back before filling this page) In short, first, set the size of the projection area corresponding to the focal depth pl of the optical projection system PL. When using the optical projection system PL with a larger focal depth, Exposure processing is performed on a large projection area, so that the exposure processing can be performed under a reduced number of exposure processing times or the number of photomasks, and then a more efficient exposure processing can be performed at a low cost. On the other hand, when using the optical projection system PL with a small depth of focus, it is possible to perform accurate exposure processing on a small projection area. In summary, when the exposure processing surface of the substrate P is located within the focal depth of the optical projection system PL, the size of the projection area is automatically adjusted from the large to the small according to the flatness of the substrate P, and the A highly accurate pattern is formed in all the exposed areas. Among them, since the setting of the optimal projection area corresponding to the flatness is performed with better efficiency, high productivity can be achieved, and even more accurate exposure processing can be performed more efficiently. Since the pattern is formed by a plurality of divided patterns, when the pattern is exposed on the substrate p, the plurality of divided patterns are combined with each other on the substrate P, and are respectively corresponding to the projection areas having the desired flatness. A division pattern is formed in each. Therefore, a highly accurate pattern can be formed as a whole. Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Shellfish Consumer Cooperative. Since multiple divided patterns are formed on multiple photomasks, 'exposure processing by replacing these photomasks' is an exposure process with good workability. At this time, because this pattern has a repeated pattern of the same part of the pattern, it will be joined with high precision when the continuous picture is performed. ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210X297). ) Printed by the Central Bureau of Standards of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives, 518662 8 6 8 6pi f. Doc / 0 0 8 A7 _____ B7 _ _ V. The position of the pattern in the description of the invention (, V) is closely matched, and the joint is outside the joint The shape of the pattern can be easily formed at any position at the same time. Furthermore, in this case, the bonding process using the shielding glass Bg can be easily performed with high accuracy. Second Preferred Embodiment Next, an exposure method and an exposure apparatus according to a second preferred embodiment of the present invention will be described. Here, the same structural parts of this preferred embodiment as those of the aforementioned first preferred embodiment are denoted by the same symbols, and descriptions thereof are omitted or omitted. In the first preferred embodiment, a plurality of divided patterns are respectively formed on a plurality of photomasks, and then each exposure mask is irradiated with exposure light, and the images of the plurality of divided patterns are bonded on the substrate P A predetermined pattern formed by exposing on the substrate P. In the second preferred embodiment, the mask M used is a mask with a predetermined pattern, and the projection area of the mask M is changed and divided into a plurality of exposure rays by a shielding device B (setting device). In the illumination area, a pattern formed on the photomask is divided into a plurality of regions, and each divided pattern is bonded to the substrate P to form an exposure pattern on the substrate P. Referring to FIG. 7A, when the substrate P is exposed with the mask M formed with the pattern PA, the size of the projection area of the substrate P is set as follows based on the result obtained by detecting the flatness of the substrate P. The four divided patterns PAa to PAd (divided areas) shown in FIG. 7B. In this case, the shielding glass Bg of the shielding device B is combined to divide the exposure area EL to the irradiation area of the mask M into a plurality of parts, and is formed in the figure 25 of the mask M. This paper standard applies to the Chinese National Standard (CNS) ) Α4 specification (210 × 297 mm) -------- • -install ------ 1T ----- fee (please read the notes on the back before filling this page) Central Bureau of Standards, Ministry of Economic Affairs Printed by Pui Gong Consumer Cooperative 518662 8686pif.doc / 008 A7 _______B7____ V. Description of the invention; The case PA is composed of a plurality of divided patterns PAa ~ PAd, and then the plurality of divided patterns PAa ~ PAd are bonded to the substrate P. Furthermore, referring to FIG. 7B, the illuminating area of the mask M can be set by adjusting the shielding device B (shielding glass Bg), and then the divided areas PAa to PAd are sequentially irradiated with the exposure light EL. At this time, the joint portion adjacent to the division pattern is adjusted to coincide with the light reduction area of the light reduction portion 15b of the shielding glass Bg, thereby uniformizing the exposure amount of the entire exposure area. When the flatness of the substrate P is large (poor) or the focal depth of the optical projection system pL is small, the exposure processing surface of the substrate P corresponding to each projection area is located within the focal depth of the optical projection system PL, thereby reducing the projection area As shown in FIG. 7C, the pattern PA is divided into six divided patterns PAa to PAf (divided area) by adjusting the overlapping amount of the shielding glass Bg as shown in FIG. 7C. . Furthermore, when the flatness of the substrate P is small (preferably) or the focal depth of the optical projection system PL is large, the size of the projection area can be increased. 'Please refer to FIG. 7D to adjust the shielding glass Bg. The pattern PA is divided into, for example, two divided patterns PAa and PAb (divided regions). Therefore, by adjusting the shielding glass Bg, the size of the illumination area of the exposure light EL can be arbitrarily set on one mask M. In short, the size of the illumination area can be adjusted arbitrarily to the size of the projection area on the substrate P. Then, the pattern corresponding to the projection area is bonded to the substrate P, and a predetermined pattern can be formed on the substrate P. In the above description, when the predetermined pattern PA forms a plurality of divided patterns 26, the paper size applies the Chinese National Standard (CNS) Α4 specification (21 × X 297 mm) -------- 41 ^ -pack-- ---- Order ---- I (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 518662 8686pif.doc / 008 _______B7____ V. On the occasion of the invention description (W), The size of the illuminated area of the exposure light EL of the predetermined pattern PA is set according to the size of the set projection area, and a divided pattern corresponding to the size of the projection area is formed. In summary, in the present preferred embodiment, when forming the division pattern, a shielding device B (shielding glass Bg) is used to reduce the number of photomasks used. What's more, a pattern such as a repeating pattern formed by repeating a pattern of the same portion can be set at any position of its divided area. In the above description of the first preferred embodiment and the second preferred embodiment, when a photomask M having a predetermined pattern PA is used, the pattern PA can be divided by a shielding glass Bg for exposure processing, or can be used separately The divisional masks Ma ~ Md (Ma ~ Mf) having smaller division patterns PAa ~ PAd (PAa ~ PAf) are subjected to exposure processing. Furthermore, it is also possible to use the divisional masks Ma ~ Mf and the shielding glass Bg having the division patterns at one time to further divide the division patterns PAa ~ PAf. In addition, the repeated pattern (pixel pattern) formed by repeating the same portion of the pattern is, for example, after using the repeated pattern portion of the divided pattern PAa as shown in FIG. 5B, the divided pattern PAb is then applied to the area on the substrate P. At the time of exposure, the overlapping pattern portion of the divided pattern PAa is exposed using a shielding glass Bg. Finally, in Figures 5A to 5D, 4 (or 6) photomasks are used to expose the repeated pattern. This repeated pattern can be adjusted on the 1 mask used by the masking glass Bg and Exposure, and a wide range of exposure areas are exposed. In this case, the peripheral pattern (wire pattern) that could not be formed on one mask can be obtained by the repeated pattern of the pixel pattern portion on one mask. 27 This paper size is applicable to China National Standard (CNS) A4 now (210X297mm) -------- install ------ order ------ (Please read the precautions on the back first (Fill in this page again) 518662 8686pif.doc / 008 A / _B7_ V. Description of the Invention (/) Furthermore, please refer to Figure 8A, when the wire pattern (peripheral pattern) PA1 and the pixel pattern (repeatedly) When the pattern of the pattern PA2 is exposed, as shown in FIG. 8B, a mask M1 and M3 having corner portions of the wire pattern PA1 and a mask M2 having most of the patterns of the pixel pattern PA2 are prepared. When the pixel pattern PA2 is exposed, on the used mask M2, the size of the projection area corresponding to the focal depth of the optical projection system PL is set by the shielding glass Bg, and then the exposure process is performed, so that the pixel pattern is formed. In the case of PA2, it is not necessary to replace the photomask M2, and further, it is possible to perform a workable exposure process. Furthermore, in the above-mentioned preferred embodiment, the mask M for performing the exposure processing is carried from the variable mask 7 to the mask stage MST for exposure. In addition, it can be mounted on the reticle 7 for exposure. That is, when the reticle 7 is installed on the reticle stage MST, the reticle 7 is moved in the XY direction so that the predetermined reticle M (Ma ~ Md (Mf)) is arranged on the light path of the exposure light EL. Moreover, the exposure apparatus of this preferred embodiment can also be applied to a scanning-type exposure apparatus that exposes the pattern PA of the mask M by using the synchronous movement of the mask M and the substrate P. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperative (please read the precautions on the back and fill in this page). The use of the exposure device is not limited to the use of light to form a pattern of liquid crystal display elements on an angle glass plate. The exposure apparatus for liquid crystals can also be applied to, for example, an exposure apparatus for semiconductor manufacturing that exposes a pattern on a wafer or an exposure apparatus for manufacturing a thin-film magnetic head. The magnification of the optical projection system PL can be reduced and placed at equal magnifications. This paper size is applicable to the Chinese national standard (CNS) A4 grid (210X297 mm) 518662 L〇c / 〇〇8 A7 B7 V. Description of the invention (乂) Big. & In the optical projection system PL, when far-red light such as excimer laser is used, nitrate, quartz or fluorite is used as the material that transmits far ultraviolet rays. When using F2 laser or X-ray, use the folding system or inflection system as the optical system (the photomask also uses the reflective type). Furthermore, when using electron beams, the optical system can be modified to use an optical electronics system consisting of an electron lens (lens) and a deflector @ ° stomach, and the optical path through the electron beams can also be turned into a vacuum state. When a linear motor is used on the substrate stage PST or the photomask stage MST, an air-floating type using an air bearing (air beaHng) and a Lorentz force or reactance can be used. Forced magnetic air float type. In addition, the platform can be a type that moves along a guide, or a guideless type that does not have a guide. When the platform's driving device uses a flat engine, a magnet unit (permanent magnet) can be used. Connected to either side of the platform with the motor sub-unit, the magnet unit (permanent magnet) and the motor sub-unit can also be placed on the other side of the moving surface side (base) of the platform. The reaction force generated during the movement of the substrate pedestal PST can be avoided by using a machine bed (earth) as a frame member as described in Japanese Patent Laid-Open No. 8-166475. The present invention is also applicable to an exposure apparatus having this structure. The reaction force that occurs during the movement of the photomask stage MST can be as described in Japanese Patent Laid-Open No. 8-330224 by using machinery 29 -------- 9 installation-(Please read first Note on the back, please fill in this page again.) Printed on the paper printed by the Central Consumers ’Cooperative of the Ministry of Economic Affairs. The paper size is applicable to China National Standard (CNS) A4 (210X297 mm). Printed by the Central Consumers’ Cooperative of the Ministry of Economic Affairs. 8 6pif .doc / 0 0 8 A7 B7 V. Description of the invention (θ) The bed (earth) is avoided as a frame part. The present invention is also applicable to an exposure apparatus having this structure. In the above, the exposure device of the preferred embodiment of the present invention is a sub-system containing various constituent elements as described in the scope of the patent application of the present invention in order to ensure the accuracy The combination of precision and optical accuracy. In order to ensure this variety of accuracy, before and after this combination, it is necessary to adjust the optical accuracy of various optical systems, adjust the mechanical accuracy of various mechanical systems, and achieve the electrical accuracy of various electrical systems. Adjustments, etc. Before the various auxiliary systems are combined in the manufacturing process of the exposure device, the various auxiliary systems can also be individually combined. After the combination of various auxiliary systems to the exposure device is completed, comprehensive adjustments can be made to ensure the accuracy of the entire exposure device. In addition, the manufacturing temperature, cleanliness, and the like of the exposure device may be managed in a clean room (clean r ((m)). As shown in FIG. 9, the semiconductor device (device) is subjected to step 201 of designing the function and performance of the device, and step 202 of making a photomask (reticule) based on the designed device. Step 2 of manufacturing a substrate (wafer, glass plate) composed of a device substrate, and step 2 of performing wafer processing for exposing a grating pattern on a wafer in the exposure apparatus of the foregoing preferred embodiment. 〇4 The device is installed (including a dicing process, a bonding process, a package > process) in step 205, inspection step 206, and the like. The exposure method and exposure device of the present invention have The following effects: The exposure method described in item 1 of the scope of patent application and the patent application 30 (please read the precautions on the back before filling out this page) • Packing. The size of the paper is applicable to China National Standards (CNS) A4 Specifications (210X 297mm) ---- 518662 8686pif.doc / 008 A7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the Invention () The exposure device described in item 7 of the scope is Detect the flatness of the substrate, and then set the size of the projection area on the substrate based on the detection result to perform efficient and accurate exposure processing more efficiently. Moreover, it is not necessary to perform conventional photomask correction Or experimental exposure and development processing, but in a productive situation, it can perform exposure processing with high accuracy in a more efficient manner. The exposure method described in the second patent application scope and the eighth patent scope In the exposure device described in the item, the size of the projection area is set to correspond to the depth of focus of the optical projection system. For example, when the depth of focus of the optical projection system used is large, the larger projection area can be exposed Processing, and the exposure processing can be performed with a smaller number of exposure processing times and a smaller number of masks, and then the exposure processing can be performed more efficiently at a low cost. On the other hand, when used When the focal depth of the optical projection system is small, it is possible to perform a highly accurate exposure processing under a small projection area. Set a better projection area corresponding to flatness in a more efficient way, so that you can achieve high productivity while performing exposure processing with high accuracy in a more efficient manner. In the exposure method and the exposure device described in item 9 of the scope of patent application, the pattern is formed by a plurality of divided patterns, and the plurality of divided patterns are bonded to a substrate to form an exposure pattern on the substrate, and each has Corresponding segmentation patterns are formed in the projected areas of the desired flatness. In this way, patterns with high accuracy can be formed in the entirety. In the exposure method described in item 4 of the scope of patent application, multiple paper sizes are applicable to China National Standard (CNS) A4 specification (210X297 public director) -------- install ------ ir ------ (Please read the precautions on the back before filling this page) 8686pif.doc / 008 518662 A7 B7 V. Description of the Invention (Called) The cutting pattern is formed by a plurality of photomasks separately. When the photomask is replaced by the photomask, it is possible to perform a workable exposure process. In the exposure method described in item 5 of the scope of patent application, the pattern has a repeated pattern formed by repeating the same portion of the pattern. When performing continuous screens, it is not necessary to perform high-precision alignment of the pattern position of the joint portion, and the position of any pattern shape of the joint portion and the portion other than the joint portion can be easily assimilated. In the exposure method described in item 6 of the scope of the patent application, the position of the bonding on the substrate is combined with the development position of the corresponding optical projection system, so that the line width of the bonding portion can be uniform. When the center of the projection area is combined with the development position of the corresponding optical projection system, the joint portion will not be affected by the aberration of the optical projection system around the projection area, which is the sixth item in the scope of patent application The described exposure method has the effect of preventing the joint portion from being affected by the aberrations of the optical projection system. -------- Install .------ Order ------ (Please read the precautions on the back and save this page)

Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs of the People's Republic of China $ L This paper size applies to China National Standards (CNS) A4 (210X 297 mm)

Claims (1)

518662 Patent application scope printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economics 1. An exposure method 'is a method suitable for exposing a pattern on a substrate in an optical projection system, the method includes: detecting one of the substrates' Flatness; and setting a size of a projection area on the substrate based on a detection result of the flatness. 2. The exposure method according to item 1 of the scope of patent application, wherein the setting of the size of the projection area is set by the focal depth of a corresponding optical projection system. 3_ The exposure method according to item 1 of the scope of patent application, wherein the pattern is formed by a plurality of divided patterns, and the pattern is exposed on the substrate, so that the divided patterns are performed on the substrate. Join. 4. The exposure method according to item 2 of the scope of patent application, wherein the pattern is formed by a plurality of divided patterns, and the pattern is exposed on the substrate, so that the divided patterns are performed on the substrate. Join. 5. The exposure method as described in item 3 of the scope of patent application, wherein the divided patterns are formed by a plurality of photomasks, respectively. 6. The exposure method according to item 4 of the scope of patent application, wherein the divided patterns are formed by a plurality of photomasks, respectively. 7. The exposure method as described in item 1 of the scope of patent application, wherein the pattern has an iterative pattern formed by overlapping a part of the pattern. 8. The exposure method as described in item 2 of the scope of patent application, wherein the pattern has an iterative pattern formed by overlapping a part of the pattern. 9. The exposure method as described in item 3 of the scope of patent application, wherein the pattern has an iterative pattern formed by overlapping a part of the pattern. 33 This paper size applies to China National Standard (CNS) A4 (210X297 mm) ------------.--, tx ------ Aw (Please read the note on the back first Please fill in this page again) 518662 8 6 8 6pi doc / 0 0 8 A8 B8 C8 D8 6. Application for patent scope 10. The exposure method as described in item 4 of the patent scope, where the pattern has a part of the pattern A repeated pattern is formed. u. The exposure method as described in item 5 of the scope of patent application, wherein the pattern has a repeated pattern formed by overlapping a part of the pattern. 12. The exposure method as described in item 6 of the scope of patent application, wherein the pattern has a repeated pattern formed by overlapping a part of the pattern. 13. The exposure method as described in any one of items 3 to 12 of the scope of the patent application, wherein the position of the bonding on the substrate is detected, and the detection result of the substrate corresponding to the bonding is The position is combined with one of the developing positions of the optical projection system. 14 · —An exposure device is a device suitable for exposing a pattern on a substrate in an optical projection system. The device includes: a detection device for detecting a flatness of the substrate; and a setting device. The size of a projection area on the substrate is set based on the detection result of the flatness. 15. The exposure device according to item 14 of the scope of patent application, wherein the setting device sets the size of the projection area by a focal depth of the corresponding optical projection system. 16. The exposure device according to item 14 or item 15 of the patent application scope, further comprising an exposure control device having the pattern formed by a plurality of divided patterns, and exposing the pattern on the substrate ' The division patterns are bonded on the substrate. 34 This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297). (Please read the precautions on the back before filling out this page.)