TW417383B - Silicon butting contact image sensor chip with line transfer and pixel readout (LTPR) structure - Google Patents

Abstract

A contact image sensor (CIS) chip uses a line transfer and pixel readout structure. Integration and signal readout are separated. The device provides more accurate data while avoiding distortion, vertical resolution reduction, and reduction of scan speed. Operational amplifiers combine signals from active photoelements and dummy elements to remove any dark fixed pattern noise or DC offset voltage from the output signal. The dummy elements are identical to the active photoelements except that they are shielded so that they receive no light. The linearity of the photoresponse is greatly assisted by this optical black level reference, strongly promoting accurate color reconstruction. One preferred embodiment entails the use as photoelements of photodiode Passive Pixel Sensors, while a second preferred embodiment uses phototransistor Active Pixel Sensors. A small holding capacitor capacitance increase the device's sensitivity, reduces reset noise, and further improves signal-to-noise ratio. The chips may be butted together end-to-end on a single substrate in one line with approximately equal space between adjacent detectors. Thus, CIS module offering higher sensitivity, low resent noise, and high signal-to -noise ration may be built using this device. All necessary clock pulses and operational amplifiers can be built on a single chip, reducing the necessary peripheral circuitry. Because the dummy element array operates independently from the active photoelement array, design flexibility for different CIS module configurations is promoted.

Description

417383 V. Description of the invention (1) This case relates to the field of contact image sensor (CIS) systems for scanning and digitizing documents, especially line transfer and pixel 3 sales (line transfer and pixel readout (LTPR) structure. The technology required for literacy and digitalization of documents has appeared for nearly two decades. The early scanning device was composed of a charge-coupled device or a self-scanning photodiode.) The contact-type image sensing system uses rod lenses. The system replaces the 2 optical system to improve these devices. This arrangement can shorten the distance between the image sensor and the document to be scanned, leaving about 2 cm. The first figure shows a schematic of a traditional contact image sensing system. This system includes three main components. (1) Light emitting diode (丨 ight emitted = column 1, ⑴ rod lens array 3, (3) long image Sensing array 4. Volume array 1 illuminates document 2, the reflected light passes through the glass cover / column 3, and the rod lens array 3 is composed of-rows of glass rods = structure ^ 'a mother glass rod will cover almost Η Photographs of photoelectric detectors: = mirror array 3 focuses the reflected image to image sensing array 4, Γ- is composed of a plurality of image sensing photoelectric elements, ... the image sensing photoelectric element 4 a contains several image sensors Array 4 is in principle B ^ + At a first nuclear wave benefit 4b. The merged image of the second image can be converted into an electronic signal handle. All the components and optical paths are merged into a small hibiscus group. Kai Du Xi & my brother took a look at his face as soon as he was round. In addition to the above-mentioned 'contact image sensor module 6', it also includes n lines 8

Page 7 4173S3 V. Description of the invention (2): Two: V ^ Wheel-out circuit 8 will combine the signals generated by the image sensing plate 5: electric power, and all the above components are placed in the plastic case 9 to form a small M group. We can give an example, which is a paper-fed image scanner, such as a facsimile machine, contact image sensing—6 (including the glass cover γ wheel 10 is fixed, file 2 is sandwiched by the roller U and glass cover 7: The glass cover 7 contacts 'when the stepper motor rotates the roller 10 = the wheel 10 will advance the file 2 until the first line of the file 2 enters the reading area of the contact shirt image sensing module 6' and then turns on the light source array m The optical signal of the reflective document will be focused on the continuous optical element. These photoelectric elements 4a convert the optical signal into an electronic signal in the form of charge or voltage and store it in the relevant holding capacitor. Next, contact The image sensing module 6 integrates the first line of file 2. After the contact image sensing module 6 reads out the first line of file 2, the contact image sensing module 6 sends a signal to the step. Entering the motor 丨 〇a, the stepping motor 10a will start driving the wheel after receiving the signal until the second line of file 2 enters the reading area of the contact image sensing module 6, and then the contact image The sensing module 6 will read the second line of file 2. These This step will be repeated until all the lines on the file are taken, and then the stepper motor 丨 〇a pushes the file 2 for the last time, and pushes the file 2 from the roller 10 and the glass star 7. The third picture shows the conventional and combined image sense. The circuit diagram of the test plate 5, and the combined scene <The image sensor plate 5 is a long printed circuit board, including a plurality of hairpins 1 = type image sensor chip 11, butted in a straight 'column' end to end on a single substrate The distance between adjacent geophones is approximately the same. The sensing plate 5 also includes

V. Description of the invention ¢ 3) The side circuit, the peripheral circuit includes a signal processing device 12 and an operational amplifier 1 3, the signal processing device 12 can continuously start individual chips, and the operational amplifier 1 3 can combine and enlarge the contact image sensing chip 1 1 generates all analog signals. The number of image sensing wafers 11 is determined by the scanning width. If 27 wafers are used, the total width obtained is similar to the standard paper width, like the width of A4 paper is about 8.5 inches. The combined image sensing version 5 generates analog film and television signal output. The two input pulse waves generated by the signal processing device 12 trigger the operation of the contact image sensing module 6. The two trigger input pulse waves are arterial waves 0 SP1. 4 and clock 0 cp 1 5, as shown in the third picture, the arterial wave 0 SP1 4 triggers the first chip 1 1 to generate the input pulse wave f I P1 6, and the first chip 1 1 also generates the end pulse 0 EP1 7. It is used to trigger the second chip to generate the input pulse Φ IP1 6. This step will be repeated until all the chips 11 have been triggered. The clock 0 ep 1 5 input positions of all chips 11 are connected together. So everyone's clock 4 cP 1 5 is synchronized, all analog signals generated by the image sensor 5 are combined and then amplified by the operational amplifier 13. The fourth figure shows the timing diagram of the conventional merged image sensor version 5, explaining the timing relationship between the components. There is a stepping motor 1 Oa to advance the file 2 so that the next line is positioned, the clock Φ CP1 5 is transmitted, and the Arterial wave 0 SP1 4 transmission, each chip 1 1 time required to read a specific line of file 2, time required to read a line in file 2 to be scanned, integration time (that is, a specific photodiode in two Time between successive readout steps) and so on. The fifth figure is a block diagram illustrating the function of a conventional contact-type image sensing module 6 using a photoelectric crystal sensing element 4a (the structure and function of the chip are described in

4173S3 --------------- 5. Description of the invention (4) U.S. Patent No. 5, 2 9 9, 0 1 3 published on March 29, U94 has detailed description) 'Image sense The test chip 1 1 includes a row of photoelectric crystal sensing elements 11 1, a row of multiplexer switches 1 1 2, n-stage digital scanning shift registers 1 1 3 of the same phase 1 1 3 b, 3, built-in The buffer 11 3 a and the actual wafer selector 11 4. During operation, the arterial wave triggers the first implemented photoelectric element 111 on the image sensing chip 11, which will continuously activate the photodetector 4b on the first photoelectric element 111, and when the last photoelectric on the first image sensing chip U After the signal generated by the crystal sensing element 11 1 has been read, an end-scan pulse is generated to trigger the next image sensing chip. Each multiplexer switch 112 is coupled to a photoelectric element 111 and an output line. Input pulse wave ^! P 1 6 Trigger each photoelectric crystal sensing element in sequence 1 1 1 Read the specific line of file 2 'Input pulse wave 0 IP1 6 Simultaneously trigger to generate clock 0 CP1 5' will input pulse wave &lt; / &gt; IP1 6 is transferred to the first stage 1 1 3 b of the shift register 1 1 3, then the actual chip selector 11 4 is activated, and each stage of the shift register 丨 丨 3 1 1 3 b Will be turned on one after the other, the output of each stage 1 1 3 of the shift register 1 1 3b will be connected to the control input of a multiplex switch 1 1 2 'When a multiplex switch 11 2 is activated, it will The signal is transmitted to the film and television line 11 5. When all stages U 3 b of the shift register 11 3 have been concealed, the shift register 1 1 3 will generate the end pulse 0 EP1 7 and end the pulse. 0 ai 7 Interrupts the setting of the chip selector 11 4 to indicate that the scan operation for this chip has been completed. In this device, the 'reading mechanism' uses the current flowing in the film and television line 1 1 5 to transmit. The photoelectric crystal 11 1 transfers the electronic signal to the film and television line & 1 1 5 while the film and television line 1 1 5 synchronizes from the photoelectric The crystal 111 reads out the electronic signal. This transfer and read structure is pixel transfer and pixel readout (p 丨 χ ^ 1

Page 10 417383 V. Description of the invention ¢ 5) Transfer and pixel readout (pTPR) structure. The sixth figure shows a block diagram of a conventional image sensing chip 1 1 using a photodiode sensing element 4 a and a differential voltage pickoff (the structure and function of the chip are in March 1998 The US Patent No. 5, 724, 09 4 issued on the 3rd is explained in detail), the shift register 丨 13 ^^ 1 1 The output of 3b will be transmitted to the corresponding η multiplexer switch 丨 1, Then 1 = the first reset transistor U8 ° turn on the multiplex switch U7 to start reading η half, and turn on the reset transistor 11 8 to start the reset mechanism, this device = and reset the η- &quot; For a solid pixel signal, the charge structure is: a clock cycle w 'this kind of transfer and readout; another kind of pixel transfer and pixel readout structure. Connect now: ϊ ΐ The difficulty is that it involves image distortion. 'Image distortion produces sensor plate 5 and Λ light V. It is used when the pixels of the straight line Λ λ video signal output are read out. Appears because of every scan on the document—like this one: and two :: After that, in addition to each pixel group of the video signal, the data obtained from each line, in addition to the nasty distortion & i make vertical The resolution is reduced by half from the optimal value. Numbers in the form: a simplified digitized file in which ... π format '* The first column of the file is placed on the glass surface of the 第 A to Shidi measurement unit, The reading of the -sensor element did not shine on the &amp; :::-pixel 18 could not detect the signal 'ϋ is a light beam: the whole = the first pixel 18. After the stomach out of the -pixel 18, the = also

Page 11 ...-Pixel 18 'At this time, the second sensing element reads the file = 417383 The second pixel 19 on the output reads out the file. The element integrates the first pixel 1 9. This is a description of the invention. (6) Two pixels 1 9 * 10% of the second sensing element. After reading out, the second sensing-. ^ Y, this, the foot process will repeat to the end of this column. Then move the contact image sensing module to read the position of the second column 'read the image signal of the second column on the document 1 The contact image sensing module reads the first pixel 2 of the second column, at this time' The first sensing element on the contact image sensing module transmits about 1% of the first row of the first pixel 18 signals, and 0% of the second row of the first pixel—pixel 2 〇Gas-like 'contact image sensing The second sensing element on the module transmits a signal of a row of second pixels 19 and a second pixel number of 0%, so the film and television signal of the contact image sensing module is tuned: Because the integration time of each pixel is different, a large number of previous tracks have been transmitted during the integration time = after the pixel contains one ^ s 4 out, every ^ 3 ° of the video signal is damaged. And one A ΛΑ 乂 ^ shows that Xing Youli goes to the other column of σ π. The seventh picture has pixel shifting and pixel readout. Β ρ β Figure B f image data, g image data sensing " The image signal of column W of the read-out part. The image signal of column η of… and its known use in the art Connect &amp; light irradiation technology to avoid this problem. J = like the strobe scanner of sensor module 6, the extension is # p4. As this technology has been used, the figure 8 shows the conventional use of Lai Yintu. The technology slowed down by half. The frequency switch of the laughter was only 1 megabytes, and the literacy time for reading the n-line was a Λ / deformation problem. However, the integration time was 22 (including the opening of the first source 417383). Explanation of the invention (7) Array 1) plus the pixel reading time 2 3 (including turning off the light source array 1). In this case, the image data will not be distorted, but the scanning speed will be reduced by half. There is an urgent need for a contact image sensor chip with high signal-to-noise ratio, precision and sensitivity, which can avoid problems such as distortion, lower vertical resolution, and lower scanning speed. It is best to make all clocks and operational amplifiers. All devices are formed on a single chip, which can reduce the necessary peripheral circuits. Therefore, in view of the lack of conventional technology and the spirit of perseverance and excellence in research, the present invention has finally developed the following linear transfer and pixels read The structured silicon pair contacts the image sensing chip. This case provides an image sensing chip for a contact image sensing module, which can accurately scan documents at the best speed, avoid deformation problems, and maintain the best vertical Resolution. This circuit includes a plurality of sensing optoelectronic elements and the same number of dummy elements to provide a baseline signal. The op amp then combines the signal generated by the dummy element with the signal generated by the actual optoelectronic element, and then outputs a fixed pattern with eliminated dark colors. Noise and all DC compensation voltage signals. In this case, a line transfer and pixel readout structure is used to scan each line of the file with a row of photoelectric detectors, and then a signal is generated, where the data of each line is separated Turn on, and then transfer them one by one to the corresponding holding capacitor of the photodetector in parallel by a row of transfer gates. In addition, the digital scanning shift register reads a line of video signals. In this case, the integration and readout steps are separate. This structure not only provides more precision

Page 13 4173 ^ 3 417333 ί, description of the invention [8) 'accurate data and high vertical resolution, Xiao Shi can also increase the speed of scanning the cat, the chip is formed in a row-to-tail butt on a single substrate It forms a contact image sensing plate with the distance between adjacent detectors being approximately equal. This contact image sensing brake module has high sensitivity, low reset noise and high signal-to-noise ratio. The function of the dummy element is the same as that of the actual optoelectronic element. Do not block 7L pieces to cover the 'household to receive light'. Therefore, the output of the dummy sensor will not change with the different images of the file. The detector provides a baseline signal that can eliminate the dark fixed pattern noise generated by the sensor and the DC compensation voltage. This elimination of output signal noise is done by an operational amplifier. The optical black level reference value also helps color reconstruction. Two external input clocks (clock 0 cp 1 5 and input pulse 0 0 IP16) are generated inside the image sensing chip to drive its operation. The advantage of this case is that the transfer gate can separate the sensing element and the hold capacitor, so The sensing element can integrate the signal, and the shift register synchronously reads the previous signal in the holding capacitor. Because all the charges are transferred in parallel, the accuracy and vertical resolution are maintained very well. The structure can also improve the speed of scanning the cat. Another advantage of this case is that the low capacitance value Ch of the retention capacitor will increase the sensitivity of the device. 'Reduce the reset noise and improve the signal-to-noise ratio. Another advantage of this cable is that all necessary clocks and operational amplifiers can be built on the same chip, which can reduce the necessary peripheral circuits. Another advantage of this case is that the optical black level reference facilitates the line of photoelectric response. Accurate color reconstruction.

Sex J

417333 V. Description of the invention (9) Another advantage of this case is that the operation of the dummy element array and the actual optoelectronic element array is independent, which can improve the design flexibility of contact image sensing modules with different structures. The other advantages, embodiments, changes, etc. of this case can be obtained by the following drawings and detailed description of the preferred embodiment for a deeper understanding: The first diagram is a schematic diagram of a conventional contact image sensing system; The second figure shows the cross section 习 of the conventional contact image sensor module; the third figure shows the circuit diagram of the conventional merged image sensor board; the fourth diagram is the timing diagram of the conventional merged image sensor board; the fifth diagram It is a block diagram of a silicon-to-contact image sensing module that is known to use a photoelectric crystal sensing element; the sixth figure is a silicon-to-contact image sensing module that is conventionally used to use a photodiode sensing element. Block diagrams; Figures 7A and 7B provide a simplified illustration of a digitized original document (Figure 7A) and the use of a conventional Shi Xi with pixel shifting and pixel readout structure for image sensing chips The detection range signal (seventh picture B); the eighth picture is a timing diagram of the conventional technique with stroboscopic irradiation; the ninth picture is a silicon-to-contact image sensing with line transfer and pixel readout structure Timing diagram of the chip,

Figures A and B provide a simplified illustration of the digitized original document (Figure 10A) and the detection range signal according to the case (Figure 10B Figure 11 is a linear transfer and pixels Block diagram of the silicon-to-contact image sensor chip with readout structure,

Page 15 41V3S3 V. Explanation of the invention (ίο) Figure 12 shows a cross-sectional view of an image sensing optoelectronic element, a shift gate, and a retention capacitor in an image sensing chip with a line transfer and pixel readout structure; Figure 12 is a potential map of an image sensing chip with a line transfer and pixel readout structure during an integration cycle. Figure 12C is a silicon pair contact type with a line transfer and pixel readout structure. Potential map of an image sensing chip during a transfer period; Figure 12 is a potential map of a silicon-to-contact image sensing chip with a line transfer and pixel readout structure after transfer; twelfth The diagram is a timing diagram of a silicon-on-contact image sensing chip with a line transfer and pixel readout structure. The fourteenth diagram is a silicon-on-contact image-sensing chip with a line transfer and pixel readout structure. The plan view of the chip configuration; the fifteenth figure is a block diagram of a silicon-on-touch image sensing plate with a line transfer and pixel readout structure; the sixteenth figure is a combination of a line transfer and pixel readout structure Timing diagram of the silicon-on-contact image sensing board; the seventeenth diagram is light Simplified schematic diagram of an active pixel · sensor (APS) image-sensing optoelectronic element of a transistor; Figure 18 is an image sensor chip and an active pixel sensor used as an image sensing element The nineteenth figure is a contact image sensing chip with line transfer and pixel readout structure, an active pixel sensor shirt image sensing optoelectronic element, and correlated double sampling (CJ S) Circuits, etc.

Page 16 4173S3 V. Description of the invention (11) Block diagram; and the twentieth diagram are a contact image sensing chip with line transfer and pixel readout structure, active pixel sensing benefit image sensing photoelectric element, Timing diagram of a correlation double sampling circuit, etc. The main components in the picture are marked as follows 1: light emitting diode light source array 3: rod lens array 4 a, 1 1 1: image sensing photoelectric element 5: combined image sensing plate 7: glass cover

9: Plastic case 1 a: Stepping motor 1 2: Signal processing device 1 4: Arterial wave 0 SP 1 6: Input pulse wave 0 jP 1 8, 1 9, 2 0, 2 1: Pixel 2 3: Read Output time 2 5: Reset pulse 0 R 2 6, 1 1 3 a: Buffer 2 8: Implemented photoelectric element array 3 0: Implemented photoelectric element 3 2: Hold capacitor 3 3a Emitter follower 3 5 Empty layer transistor 2: File 4: Image sensing array 4 b: Photoelectric detection 6: Contact image sensing module 8: Output line 1 0: Roller

11, 5 1: Contact image sensor chip 13, 68a: Operational amplifier 1 5: Clock must be CP

1 7: End pulse must be EP 2 2: Integration time 2 4: Transfer pulse 0 τ 2 5 b: Frame pulse 0 F 2 7: Clock generator 2 9: Dummy element array 31: Transfer gate 3 3, 11 8: Reset transistor 34: Metal oxide semiconductor transistor 3 6: Power-saving transistor

Page 17 417383

V. Description of the invention (12) 3 7, 1 1 2, 1 1 7: Multiplex switch 39: Implemented chip selector 4 1: Dummy component

Required ASP 38, 42, 113: Shift temporary storage g 3 9, 4, 0: Film buffer 4 3, 5 4, 5 9: Set up arterial wave 4 5: Set output signal 46, 52, 52a, 63 : Dummy arterial wave 4 7,5 3,5 3 a: Dummy end pulse $ Dsp 48, 55, 55a, 64: Dummy output signal ϋ End pulse pulse 49 _First chip daughter _ FREE rn 5 〇: Last 5 6, 6 5: Actual output signal ^ 58,61,62

AEP 67 Flip-Flop Circuit 68 Light Emitting Diode Output Pulse 0 69 Dummy Pixels in Front 71 Dummy Pixels in Rear 75 Sampling / Holding Switch 86 pn Junction Diode 88 Active Pixel Sensor Capacitors 93, 94: Sampling / Holding Pulse wave S / HU 4: Set wafer selector 3 〇 1: Photodiode 3 〇3: Photocharge. 70 actual pixels 74 active pixel sensors 85 phototransistors 87 base reset transistors 89 emitter reset transistors 113 b: stage 11 5: film and television line 3 ΰ 2: gate with line shift and pixel read The advantage of the structured silicon-on-contact image sensor chip is that it can scan cat files accurately and quickly, and avoid deformation.

Page 18 417393 V. Description of the invention (13) And maintain the best vertical resolution.凊 Refer to the ninth figure, which shows a thousand and a plus ± Μ Λ 'ψ r% -ar, μ ,,' 4 Silicon with a linear shift and pixel readout structure on the hour bed of the contact image sensing plate 5 ^ ,,,, yeah sequence diagram, a row of photoelectric detectors 4b sweep the first line of Z, Tian Weilei ^ M ^% # aa raw scorpion bluff, this electronic signal is individual knife open of. When the transfer gate flea π h 1 is turned on, the electronic signal will be triggered by the parallel transfer detection Is 4M mesh switch holding the transistor. Transfer pulse = After reset, use reset pulse ^ 25 to reset all Photodetection 'makes it have a reset voltage. Enter the pulse wave ^ ι6 to trigger the shift temporary storage ^ out of the movie and TV news. Enter the pulse wave ^ pl 6 to turn on the stepper motor at the same time! 〇a, to drive the roller 10 to advance the file 2 so that the next line can read the position, contact image The sensing version 5 starts to read the next line of file 2. As you can see, the integration time of all pixels is the same, so this case can avoid the difference in integration time of each pixel of scan file 2 in the conventional art. The deformation problem can also get the best vertical resolution, which provides higher accuracy than the conventional traditional pixel transfer and pixel readout image sensor. The scanning period of the line is the same as the readout time 23 Unlike the conventional system, which uses stroboscopic illumination to eliminate deformation, this case does not need to extend the integration time 2 2 to complete a scanning cycle (see Figure 10A and Figure 10b). In contrast, this case greatly improves the scanning speed. The eleventh figure shows a simple block diagram of a silicon-on-contact image sensing plate 5 with a line transfer and pixel readout structure. The main components are (1) a buffer 2 6 and (2) a clock generator 2 7 (3) the optoelectronic element array 28 is implemented and (4) the dummy element array 29 is implemented. The buffer 26 is used to separate the device from the external circuit and provide sufficient power to drive the clock generator 27 7. The photovoltaic element array 2 8 417333

And the dummy element array 29, when the two pulse waves of the clock heart pl 5 and the input pulse wave heart p 1 6 are received, the clock generator 2 7 will generate the shift pulse 0 τ 2 4 and reset the pulse 0 R2 5 and frame pulse wave 2 5b. The actual optoelectronic element array 28 includes several elements: (1) a plurality of actual optoelectronic elements 30, (2) a plurality of transfer gates 31, (3) a plurality of retained electricity containers x 32, and (4) a plurality of repeaters Transistor 33, (5) multiple emitter followers 3 3 a, (6) multiple multiplex switches 3 7, (7) η-order digital scanning shift register 3 8, (8) real It is assumed that the chip selector 39 and the (9) film and television buffer 4 0. Each emitter emitter coupler 33a includes a gold-oxide semiconductor transistor 34 ′, an empty layer transistor 35, and a power-saving transistor 36. The dummy element array 29 contains fewer elements of the same type than the actual optoelectronic element array 28. Replace the plurality of real optoelectronic elements 30 with a plurality of dummy elements 41. The size of the dummy element 41 and the actual optoelectronic element 3. Similarly, each dummy element 41 is placed near the corresponding position of the actual optoelectronic element 30. The difference is that it is blocked by some blocking elements to block the light. The material of the blocking element is mostly aluminum 'dummy element 41. Only dark fixed pattern noise is generated. The dark fixed pattern noise generated by the photoelectric element 30 is the same as that generated by the dummy element 41. By comparing the output of the actual photoelectric element 30 and the dummy element 41, the noise in the output signal can be eliminated. The dark fixed pattern noise and DC compensation voltage, so the use of the dummy element 41 can eliminate the dark fixed pattern noise of the photoelectric element 30.

The operation of the actual element array 28 can be performed before or after the dummy element array 29. The actual element array 28 and the dummy element array 29 can operate independently or stop the soil. Stop Action I

Page 20 417383 V. Description of Invention (15) — Off. The twelfth figure A shows a cross-sectional view of the image-sensing photoelectric element 30, the transfer gate 3, and the holding valley device 32. The photovoltaic element 30 is composed of a photodiode 301 and a \ 0G gate 3 0 2 As a result, the voltage of vQG gate 3 2 is adjusted to be between the high-order and low-order levels of the transfer pulse &lt; / &gt; τ2 4 because 11301, ^, tr, (threshoUlevel) ,; ; J ^ is used to set the fixed limit voltage of the photodiode 301. In a preferred embodiment, the material of the V0G interfacial pole 3 〇2 is polycrystalline silicon, and the v0G interpole 3 〇2 can also be implanted by ion implantation. The implantation method is performed by implanting an ion having the same electromotive force as that of the V0G gate 302. As shown in the bitmaps twelfth figure B, twelfth figure c, and twelfth figure d, the transfer gate 31 is used to transfer the photocharge 3 〇3 of the photovoltaic element 3 〇1 to the holding capacitor. 32. The twelfth figure B is a bit energy map during the integration cycle, which shows that the shift gate 3 1 is turned off during the integration cycle, and the light emitting diode light source array 1 illuminates the file 2 and the photoelectric element 3 0 1 generates a photocharge 3 〇3, and stored it in the photovoltaic element 30i. Twelfth 圊 C is a bit energy map during the transfer period, which shows that the transfer gate 3 1 is turned on and the light-emitting diode light source array 1 is turned off 'the photocharge stored in the photovoltaic element 3 〇 during the transfer period 3 03 is transferred to the holding capacitor 32. The twelfth figure D is a bit energy map after the transfer, which shows that when all the photocharges 3 0 3 are transferred to the holding capacitor 3 2, the transfer gate 3 1 will be closed again. 'At this time, the photovoltaic element All the photocharges 3 0 3 generated by 3 0 1 are transferred to the holding capacitor 32 ′. Then the photo element 3 0 1 is ready to integrate the next line of document 2 because the transfer gate 3 1 separates the photo element 3 0 1 And hold power

Page 21 417383 V. Description of the invention (16) The container 32, so the charge on the photovoltaic element 301 is different from that on the holding capacitor 32. The charge on the holding capacitor 32 represents the signal of the previous line (the η-1 line), The electric charge on the photoelectric element 301 represents the signal on the line (the n-th line). Therefore, the signal can be read from the holding capacitor 32, and the signal on the photoelectric element 301 can be integrated simultaneously. The time to read a line on file f is the same as the integration time 22 or read time 23, which greatly increases the line scanning speed. Using the hold capacitor 3 2 can not only increase the line scan speed, but also increase the sensitivity of the device, reduce the reset noise, and improve the signal-to-noise ratio. The voltage difference of the holding capacitor 32 is equal to the photocharge divided by the capacitance value. If the photocharge 303 generated by the photoelectric element 301 is AQ and the capacitance value of the holding capacitor 32 is CH, then the signal ΔνΗ = Δζ! / (: Η, usually photoelectric The capacitance value of the element 301 is relatively large, because its size is relatively large (in a preferred embodiment, the area used at 200dpi is about 125 // mxl25 / zin). What is the voltage difference between the photovoltaic element 301 and the factory? 0 / (: 1 ), Because the film and television signal increases from Δ VD when passing through the photoelectric element 301 to Δ VH passing through the holding capacitor 32, the device amplifies the signal by a factor of G. G = Cd / Ch Equation (1) where CD is photoelectric The capacitance value and CH of the element 301 are the capacitance values of the holding capacitor 32. As shown in Equation (1), the low capacitance value CH of the holding capacitor 32 can increase the device sensitivity G. Another advantage of the small holding capacitor 32 is that it can reduce Reset noise, because the charge on the holding capacitor 32 must be reset after being read out. The reset mechanism will generate reset noise when resetting the holding capacitor 32 to have a DC voltage.

Page 22 417333 V. Description of the invention (17) The reset noise is proportional to the square root of the capacitance of the holding capacitor 32. Reducing the capacitance of the holding capacitor 32 can reduce the reset noise. K = (CD / CH) 1/2 Formula (2) Given a hold capacitor 32 capacitance CH, the reset noise will be: NR = [(k xT) / q] x (Ch)! / 2 = 40 0 (Ch) 1/2 electrons at 25 ° C Formula (3) If CH is equal to O.lpF 'Reset noise is 126 electrons at room temperature, compared with one million electrons on the photoelectric element 3 0, This reset noise is so small that it can be ignored, so the signal-to-noise ratio is greatly improved. The charge on the holding capacitor 32 is converted into a voltage signal by the emitter follower 33a. As mentioned above, the emitter follower 33a It is composed of metal oxide semiconductor transistor 34, empty layer transistor 35, and power-saving transistor 36. The function of empty layer transistor 35 is similar to a loading resistor. When the voltage is changed, a fixed current is provided to stabilize the signal. The gate of the transistor 36 triggers the clock pulse generator 27 to generate the frame pulse wave p. The emitter follower 3 3 a will only open after the frame pulse wave 0 F is activated, and then closes during the hold period. This may Reduce energy consumption. This function reduces the energy consumption of the emitter follower 33a. The voltage signal ΔΥ produced by the emitter follower 33a is equal to the increase of the emitter follower 3 3a. The benefit A is multiplied by the voltage difference of the hold capacitor 32. Δ V = (Δ Q / Ch) x A Equation (4) where A is the gain of the emitter follower 33a. Then the η-stage shift register 38 controls the multiplexer switch 3 7 to read the signal. After the η-stage shift register 38 reads the signal, the reset transistor 33 is turned on to reset the holding capacitor 32 so that it has a Reset voltage, at this point, hold capacitor 32

Page 417 383

Be prepared to receive signals from the first line of the younger brother &amp; r I t the price! r I received the two pulses of the clock 0 CP 1 5 and the human pulse wave 1 P 1 6 'the clock generator 27 generates the transition pulse ^ 24, reset pulse 0R25 and The frame pulse &lt; / &gt; F25b, the n-order shift register 38 and the m-order digital scan shift register 42 in the dummy element array 29 operate in accordance with the clock cpl 5 because these two shifts The arterial wave of the bit register is designed separately, so the real pixel and the dummy pixel can be read separately. The actual arterial wave 4 Asp43 is used to activate the η-order shift register 38, and the dummy arterial wave Bobi Cai 46 is used to trigger the m-stage shift register 4 2. The number of stages in the m-stage shift register 4 2 is less than the number of stages in the η-order shift register 38. The two consecutive start time intervals of the shift register 42 will be longer than the time intervals required to generate the shift pulse 0τ24, the reset pulse 0 R 2 5 and the frame pulse φ F 2 5 b. The thirteenth figure shows the timing diagram of the image sensing chip with line transfer and pixel readout structure. The dummy element array 29 and the dummy arterial wave must be DSP4 6 and used to start the m-order shift register 4 2. The input pulse waves 0 1P1 6 are connected, and after the m-th clock cycle, the dummy element array 29 generates a dummy end pulse wave 0DEP47. The dummy output signal VD〇48 between the input pulse wave 0IP16 and the transfer pulse wave T24 will be deformed during the reset and transfer process, and cannot be used as a black level reference value. It starts with the transfer pulse wave 4 τ2 4 falling The edge and the dummy end pulse 0DE; P47 — The dummy output signal Vd〇48 segment can indicate the dark fixed pattern noise output from the dummy element array 2 9. This dummy output signal VDQ4 8 is used to provide the black level Reference value to eliminate the dark fixed pattern noise generated by the installed photoelectric element array 28. The dummy end pulse wave 0 DEP47 of the dummy element array 29 and the installed photoelectric element array 28 have arterial waves.

Page 24 417 °; S3

Fifth invention description (19) 0 ASP4 3 is connected, which causes the set optoelectronic element array 28 to start the set optoelectronic element 30 and sequentially read the set movie and television signals. The use of the dummy element 41 to eliminate the dark fixed pattern noise generated by the photovoltaic element 30 can be explained as follows: 'When the time is within the integration time 22', the charge on the capacitor related to the mother-actuated photovoltaic element 30 is gradually related to the actual photovoltaic element. The reverse current of 30 is taken away. The reverse current contains two parts: photocurrent and dark fixed pattern noise. 'Photocurrent is equal to the response of the photodetector times the light intensity. When scanning online, 'the charge integrated from each photodetector is the sum of the photocurrent and the dark fixed pattern noise (dark leakage current) multiplied by the integration time 2 2, and the electricity is stored in the installed photoelectric element 3' Then an electromotive force is generated. Equation (5) describes the charge accumulated at the position of the photoelectric element: AQa = (Il + Id) xTint Equation ⑸ where t, IL is the photocurrent, Id is the dark leakage current, and Tiat is the integration of the image sensor Time 2 2. Assume that the size of the dummy element 41 is the same as that of the actual photovoltaic element 30. The current accumulated on the dummy element 41 will be equal to the product of the dark leakage current times the integration time Tint 2 2. aQd = id xTlnt type 随 emitter follower 3 3 a converts the current on the holding capacitor 55 3 2 into the above-mentioned related voltage level, and the actual output voltage △ Qa0 of the actual photovoltaic element is reduced linearly proportional to The charge on the photovoltaic element 30 is set. AQa〇 = (AQa / Ch) XA Equation (7) where CH is the capacitance of the holding capacitor 32 and A is the gain of the emitter follower 3 3a =

Page 25 41 *-V. Description of the invention (20) The dummy output voltage ΔQd0 of the dummy element array 29 will be linearly proportional to the charge on the dummy element array 29. Δ Qdo = (Δ Qd / Ch) XA Formula (8) The capacitance of the holding capacitor 32 in the photovoltaic element array 28 is the same as that of the dummy holding capacitor 29 in the dummy element array 29. The gain of the coupler 33a is the same. In order to eliminate the dark fixed pattern noise, 'the system is designed to have a net output signal △ V equal to the actual output signal of the actual optoelectronic element array 2 8 4 5 minus the dummy output signal of the dummy element array 2 9 4 8 ° AV = AVa0- AVdo = [Il + Id] -IJ xTint = IL X Tint Eq. (9) Integration time Tint22 in all the installed optoelectronic components 30 and dummy components 4 1 is a fixed value 'hence' the net output signal △ V is linearly proportional to the photocurrent 'as shown in equation (9), the photocurrent is the product of the photoresponse R times the light intensity 1' The photoresponse R of the actual photoelectric element 30 is followed by each of the actual photoelectric element 30 and the dummy element 41 is the same, so the net output signal Δ V is linearly proportional to the light intensity of the reflected image of file 2 again. Equation (ίο) The linear definition of the photoelectric response is the net output signal △ V divided by the light intensity and i 'so it is a fixed value. The linearity of the photoelectric response is the use of the contact image sensing module 6 to scan black and white documents in the embodiment of this case. 2 important concept, this feature is particularly important in the embodiment involving the color contact image sensing module 6, in the application of the use of the color contact image sensing module 6, the number of each pixel of the color file 2 The representation is composed of three colors: red, green, and blue. Traditional color scanners provide at least eight bits of recording for each color, or at least 2S = 256 for each color.

4173S3 Description of the invention (21) Select ‘therefore, if each pixel is composed of a combination of these three colors, a total of 224M6,777,216 different colors can be reconstructed. The color C of a given pixel is determined by the following formula: C = A% XR + B% XG + C% χΒ where 'Α% is the percentage representation of the three-color representation of the pixel, C% is the blue color, and B represents blue. (Eq. ⑴) The percentage of red in the expression 'is green, R is red, G is green. Note that A + B + C = 100. The linear principle of photoelectric response described above can improve the accurate reconstruction of the color image of Document 2. The fourteenth figure shows a plan view of a chip configuration of a silicon-on-contact image sensor chip with a line transfer and pixel readout structure. As shown in the figure, the actual photoelectric element array 28 is arranged on the image sensor chip The “half part” and the dummy element array 29 are arranged in the lower half of the wafer 11. A total of n real photovoltaic elements 30 are arranged in a row with a space of ㈣, and a very long real photovoltaic element can be easily arranged. 3H (such as A4 size) or-on a row of photoelectric element wafers 11 The fifteenth figure is a block diagram of a silicon-to-contact image sensing plate with line transfer and pixel readout structure, which includes (1) a plurality of silicon For the contact image sensor chip 11, (2) the flip-flop circuit 67, and (3) the operational amplifier 68a, when the dummy element array 2 9 on the first chip 4 9 receives the arterial wave 0 sp 1 4, it will Send a dummy arterial wave &lt; / &gt; DSP 5 2, trigger input pulse 0 ip 1 6 and dummy element array 2 9 then send a dummy knot east pulse 0 DEp53, dummy end pulse (/) DEP 5 3 and real Suppose the arterial wave is 0 ASp 5 4 turns. This design has greater flexibility, connecting the dummy element array 29 can be connected to the actual optoelectronic element array

Page 27 4173S3 ___ V. Description of the invention (22) 2 8 Arranged earlier to provide longer time to measure the black level reference value, the dummy element array 29 generates a dummy output signal VDQ55, and the actual output generated by the actual optoelectronic element array 28 It is assumed that the output signal VA05 6 is combined, and the implemented optoelectronic element array 28 of the first chip 49 sends out an actual end pulse 0AEP58, and is connected to the second chip 51 on the second chip 51 to establish an arterial wave 0ASP59. 'The last chip 50 is connected to the last chip set with the arterial wave 0 ASp and the previous chip's set end pulse, and the output end 60 and the penultimate chip's set end pulse 0 AEP 61 are connected. The set of optoelectronic element array 2 8 triggers the last chip 50 to output the set-up end pulse 4 aep6 2. The last chip 50 sequentially connects to the dummy arterial wave 0DSP63 of the dummy element array 29, and the dummy output from the dummy element array 29 is rotated out. The signal VD () 64 is combined with the actual output signal VA065 generated by the actual photoelectric element array 28. The actual photoelectric element array 28 has three junction pieces, which respectively correspond to the actual arterial wave 0 ASP 5 4. The actual end pulse wave 0 ΑΕΡ 5 8 and the actual output signal VAQ6 5; the dummy element array 2 9 also has three splicing pieces' corresponding to the dummy arterial wave required DSP 5 2. The dummy end pulse 0 DEP 5 3 and the dummy output signal VD0 5 5. The dummy end pulse wave 0 DEP 5 3 and the arterial wave 0 SP1 4 are connected to different ends of the flip-flop circuit 67. The flip-flop circuit 67 generates a light-emitting diode output pulse wave 0LED68, which can let the device automatically illuminate File 2. Except for the first chip 4 9 and the last chip 50, the dummy element array 29 on all chips 5 1 can interrupt the dummy artery wave DSP52a, the dummy end pulse 4 dep 5 3 a, and the dummy output signal VD0. 5 5 a makes it known that all analog signals generated by the chip 11 will be combined together and then amplified by the operational amplifier 6 8. The sixteenth figure is a merged silicon pair contact with a line transfer and pixel readout structure

Page 28 41 Vi? 3 V. Description of the invention (23) Timing chart of the image sensing version. The actual pixel 70 will transmit the video signal. Before the actual pixel 70, there are ml dummy pixels 69 in front of the dummy signal. After the actual pixel 70, there are m2 rear dummy pixels 71. As described above, the front dummy pixels 69 and the rear dummy pixels 71 can eliminate dark fixed pattern noise. When operating, when the contact image sensor module 6 After receiving the arterial wave 0 SP, the clock generator 2 7 synchronizes the reset pulse R 2 5. The frame pulse 0F25b and the transfer pulse 0τ24 are reset by reset pulse &lt; /) r25 The capacitance value of the holding capacitor 32 has a reset voltage, and the pulse wave 0T2 is transferred to trigger the entire array of installed photovoltaic elements 3 0 'separate the electronic signal and then transfer to the installed photovoltaic element 3 0 in parallel. 2. The entire set of actual optoelectronic elements 30 continues to integrate the next line of file 2. As described in equation (4), the charge on the actual holding capacitor 32 is converted into a voltage signal by the emitter follower 3 3a, and then η step shifted. The bit register 38 controls the multiplexer switch 3 7 to read the signal. After the n-stage shift register 38 reads the signal, the reset transistor 33 is turned on to reset the hold capacitor 32 to have a reset voltage, and then The holding capacitor 32 is ready to receive the second line signal of the actual photovoltaic element 30. This mechanism is repeated repeatedly to read the next line of the file 2. In a preferred embodiment, a passive pixel sensor (PPS) can be used to fabricate the actual photovoltaic device. The twelfth figure shows an actual photodiode passive pixel sensor, which includes a photodiode 301 and a V0G gate 302. Adjust the voltage level of the gate of the VQG gate 302 'between the high-order level and the low-order level of the transfer pulse 0T24' to set the fixed level of the photodiode, and the photodiode will accumulate Charge, and then convert the charge signal into a voltage signal. In a preferred embodiment

Page 29 417333 V. Description of the invention (24) --- The 'actual photodiode' is an actual pn junction diode, which can convert the charge signal into a voltage signal. In another preferred embodiment, the diode is a ° p-i-n photodiode, and the dark fixed pattern noise is about one-tenth that of a conventional junction junction photodiode. In a preferred embodiment, the gate is a gate formed by an ion implantation method. Here, a single-complex wafer process can also be used to form the gate. In a preferred embodiment, an image sensing chip with a photodiode includes in principle: (1) a buffer, (2) a clock generator, (3) an array of optoelectronic elements, and (4) a dummy element Array. The actual optoelectronic element array itself includes several elements: (1) a plurality of implemented passive pixel sensors, (2) a plurality of implemented retention capacitors, (3) a plurality of reset transistors, and (4) a plurality of emitters. Pole follower, (5) multiple multiplexer switches, (6) n-stage shift register, (7) implemented chip selector, (8) film buffer, and (9) multiple shift gates The charge on the implemented passive pixel sensor can be separated from the charge on the actual holding capacitor, and the charge on the actual passive pixel sensor can be transferred to the actual holding capacitor. This arrangement can be read simultaneously The charge on the holding capacitor and the charge on the integrated photovoltaic element are set. The dummy element array includes fewer elements of the same type than the actual optoelectronic element array. 'Replace a plurality of implemented passive pixel sensors with a plurality of dummy passive pixel sensors. Similarly, the selected component can be replaced with other dummy arrays. Separate to simplify the dummy element array. For example, if the m-stage shift register 42 is separated, a dummy output signal VD0 of a constant voltage will be generated. Each emitter follower 33a is a metal oxide semiconductor transistor

Page 30 V. Description of the invention (25) --------- 34. An empty-layer transistor 35 and-a power-saving transistor ^, the role of the empty-layer transistor 35 is similar to that of a load resistor When the voltage changes, a fixed current is provided to stabilize the signal; the gate of the power-saving transistor 36 triggers a sampling pulse, and the emitter follower 3 3 a turns on only during the sampling period, and then turns off during the hold period. This reduces energy consumption. During the integration period, the photodiode generates a photocharge and stores it in the associated holding capacitor 'and the emitter follower converts the charge on the holding capacitor into a voltage signal. In another preferred embodiment, an active pixel sensor can be used to manufacture the contact image sensing chip 11. The chip includes in principle: (1) a buffer, (2) a clock generator, (3) A photovoltaic element array and (4) a dummy element array are provided. The actual optoelectronic element array 28 itself includes several elements 1) a plurality of actual active pixel sensors, (2) a plurality of sampling / holding switches, (3) a plurality of holding valleyrs, (4) a plurality of Power switch, (5) n-stage shift register, (6) actual chip selector and video buffer. The dummy element array includes less than the number of the same type of photoelectric element array, and replaces the plurality of actual active pixel sensors with the plurality of dummy active pixel sensors. The size of the dummy element is the same as that of the actual optoelectronic element, but the light is cut off by aluminum. Similarly, the element can be separated from other dummy arrays to simplify the dummy element array. For example, if the m-stage shift register is Separated, it will produce a dummy output signal VDQ64 of constant voltage. The seventeenth figure shows a simplified schematic diagram of an optoelectronic crystal active pixel sensor. The optoelectronic crystal active pixel sensor includes (1) a photonic crystal 8 5, (2) a Pn junction photodiode 86, and (3) a base. Electrode reset transistor 87, ㈠) active

Page 31 417 ^ 183 V. Description of the invention (26) Pixel sensor capacitor 88 and (5) Emitter reset transistor 89, Photoelectric crystal 85 converts the optical signal into an electronic signal. When the base voltage exceeds a fixed Non-zero emitter voltage, such as 0.7V, the photonic crystal 85 is turned on. In order to avoid the problem of low light level, a pn junction photodiode 86 is inserted between the base of the photoelectric crystal 85 and the base reset transistor 87, and the base voltage is reset to a fixed non-zero voltage, such as 0. 7 V, unlike the traditional photovoltaic crystal structure, which resets the voltage by grounding. Another advantage of the pn junction diode 86 is that it can quickly balance the temperature of the photovoltaic diode 86 and the base-emitter of the photovoltaic crystal. When resetting, reset the transistor 89 'with the ground resetting the emitter and the base resetting the transistor 8 7 resetting the base voltage of the phototransistor' so that it has a non-zero value, such as 0.7 v, at the same time Reset the base and emitter of the optoelectronic crystal. The active pixel sensor capacitor 88 stores the charge corresponding to the conversion signal. The combined effect of the photonic crystal 85 and the active pixel sensor capacitor 88 is similar to that of an emitter follower. This design provides a simple and inexpensive structure. Sensing Edition. The eighteenth round electric element 3 0 of the real electric diode actively resets the transistor 2 0 1 and 4 an emitter is coupled to the role of the empty layer transistor 35 to stabilize the signal dynamic pixel A block diagram of the image sensor chip 11 and the active pixel sensor 74 as an actual image sensor. Each optical pixel sensor 74 is composed of a photodiode 30 ′. 33 and an emitter follower 33a. The charge signals on the photoelectric pixels are converted into voltage signals. Each device 33a is composed of a metal-oxide semiconductor transistor%, a 35 and a power-saving transistor 36. The empty layer transistor is like a loading resistor. When the voltage is changed, a fixed power-saving transistor 36 is provided to trigger the gate. A sampling pulse, the master only responds to the chip selector pulse during the sampling period

Page 32 V. Description of the invention ¢ 27) It will be turned on and then closed during the retention period, which can reduce energy consumption. During the integration period, the photodiode generates a photocharge and stores it in the relevant capacitor 3 2 Then, the emitter follower 3 3a converts the photo charge into a voltage signal. In the preferred embodiment, the actual photodiode is a real pn junction photodiode. The charge signal is converted into a voltage signal. In another preferred embodiment, the p_i photodiode is used as the diode, and the dark fixed pattern noise is only one tenth of that of the conventional pn junction photodiode. In the embodiment of the passive pixel sensor and the active pixel sensor, the voltage signal generated by the emitter follower 33a can be obtained by the following formula: Δ V = (AQ / Cd) XA where 'is the photocharge, CD Is the gain of the photodiode capacitance value consumer 33a. Equation (12) A is that the emitter follows the active pixel sensor system. The 'sampling / holding switch 75 will generate a sampling / holding pulse wave' during the shift T period, trigger the tongue and then hold the signal to the holding capacitor 32. Sampling and holding step 'Reset transistor 33 resets the charge on the photodiode 301, which makes the lightning pressure break AV, and Zhuo Lei Dian sets the first electric pole 301, and then prepares to integrate the document 2 due to scanning: File 2 ': So Erhe's voltage difference between the holding capacitors represents Λ Vc (0: ^ ^ t ^ 32 ^ c' The double% is a function between%, expressed by the following formula: AVc (t) = AV Xexp (0t / RCH) (where R is the effective resistance of the system and Ch is the capacitance of the hold capacitor 32

Page 33 41; iS3-V. Description of the invention (28) Therefore, the capacitance value Ch of the holding capacitor 32 must be large enough, = the signal AV lasts for a period of one transfer cycle, and then the n-order shift ^ register 38 controls multiple The work switches 37 read the voltage signals of the holding capacitors 32 one after another. After the n-stage shift register 38 reads a signal, the reset transistor 33 resets the voltage signal ΔΥ, and the reset noise in the form of kTC noise will appear on the large surface of the actual photovoltaic device 30. Therefore, the preferred embodiment utilizes a correlated double sampling circuit to eliminate reset noise. Therefore, there must be more than one column of actual sampling / holding switches, actual holding capacitors, and actual multiplexing switches. More than one column of dummy sampling / holding switches, dummy holding capacitors, and dummy multiplexer switches. Similarly, the selected element can be separated from other dummy array portions to simplify the dummy element array. The nineteenth figure shows a block diagram of a contact image sensing wafer with a line transfer and pixel readout structure, an active pixel sensor image sensing optoelectronic element, and a correlated double sampling circuit. The twentieth chart is the timing diagram of the same chip. Unlike the previous embodiment, which uses only one sample / hold pulse, this embodiment uses two sample / hold pulses 0S / H] 93 and 0S / H294 to eliminate reset Noise. In this case, any person who is familiar with this technique can use any fine arts and craftsmanship to make various modifications. ’

Claims (1)

6. Scope of patent application 1 * A silicon-pair contact image sensing chip with line transfer and pixel readout structure, which includes: a clock generator 'for generating the pulse wave required to operate the chip, the pulse The wave includes a transfer pulse wave T, a reset pulse wave 0 R, and a frame pulse wave F. A: An actual photoelectric element array is used to respond to the pulse wave generated by the pulse wave generator. The array includes a plurality of real photovoltaic elements. The real photovoltaic element array is used to convert an optical signal into an electronic signal. A dummy element array includes a plurality of dummy elements. Each of the dummy elements corresponds to the corresponding actual setting. The positions of the sensing elements are roughly the same. The dummy element array is used to provide an optical black level reference value. A masking element is used to ensure that the dummy element cannot receive light, so that the dummy element generates a reference output signal. One round 'Out line' is used to transmit the signal generated by the contact image sensing chip to an external circuit; and-a buffer is used to isolate the chip from the external circuit and drive One video line capacitance of the wafer. 2 · The contact image sensing chip as described in item 1 of the scope of patent application, wherein: the array of real components includes an array of clock joints connected to the clock Φ CP '' The array of virtual components includes a The dummy clock junction piece must be CP to the clock, and the dummy clock junction piece can be the actual clock junction piece, or Page 35 Scope of patent application 3 · The contact-type image sensing chip as described in item 1 of the scope of the patent application, where = the implemented element array includes an implemented arterial wave joining piece, which moves toward a real δ and then an arterial wave 0; End pulse connection ... combining the 'connecting to the actual end pulse 0AEP' and a real output signal connection piece, connected to a real output signal VA0; and the dummy element array includes a dummy arterial wave connection piece 'Connecting to one, setting up an arterial wave will be coffee; a dummy end pulse wave joining piece, connecting to a dummy beam pulse 4 DEP, and a dummy output signal joining piece' to a dummy output signal VD. . 4 · The contact image sensing chip as described in item 1 of the scope of patent application, wherein: the operation and stopping function of the implemented element array has nothing to do with the operation and stopping function of the dummy element array; and the operation of the dummy element array And the stop action has nothing to do with the operation and stop action of the actual device array. 5 · —A kind of combined silicon pair contact image sensing plate, which includes a plurality of silicon contact image sensing chips described in the first item of the patent application range, which are aligned in a row on the substrate to enable adjacent detection. The pitch of the devices is about the same. 6 · The contact image sensing board according to item 5 of the scope of patent application, which further includes: a flip-flop circuit for generating a light emitting diode output pulse wave 0 led, the output pulse wave must be UD Facilitate automatic exposure of the document; and Page 36 6. Scope of patent application --- An operational amplifier is used to combine and amplify all analog signals generated by the contact image sensor chip. 7. The contact image-sensing plate as described in item 6 of the scope of the patent application, wherein the plurality of silicon contact-type image-sensing chips include: 1. a first chip on the first chip of the dummy element array dummyly generates an arterial wave For the DSP, the first chip has a dummy arterial wave 0 Dsp triggered by an arterial wave 0 generated by an external circuit. The dummy arterial wave 0DSp then triggers an input pulse wave 0 IP to be transmitted to the external circuit; input to each One of the chips has a dummy end pulse 0 DEp; each of the chips has an arterial wave of 0 ASp. Except for the last chip of the arterial wave, each of the arterial waves is connected to each one. The dummy end pulse wave bonding sheet; the bonding sheet of all the chips with the set arterial wave 0 ASP connected to the bonding chip of the set end pulse wave 0 AEP of the previous chip except the last chip; The set-up arterial wave 4 ASP bonding sheet of the last chip is connected to one of the penultimate set-up end pulse Φ AEP bond sheet; and the set-up element of the set end pulse wave of the set-up end pulse wave. Tie Connected to the adapter for the dummy arterial wave 0 DSP on the dummy element array. 8. According to the combination of Shi Xi's contact image sensing board as described in item 7 of the scope of patent application, one or more of the actual component array and one or more of the predetermined component array can be flexibly designed in the Shi Xi on the contact image sensor version. Page 37 The one described in item 6 includes a one-frequency flash pulse, so that the device described in item 6 is used in the 6 'application for patent scope 9. If the test version is applied, the photodiode frequency is 1 0 , The voltage reference value of the patent range of the sensing version of the package flash output please patent operation range and combine the silicon docking source generator, exempt from this file. The fused silicon is used to amplify the touch-sensitive image of the signal to generate a touch-sensitive image to create a gain in which the gain is equal to the gain in the gain. 1 · As described in the patent application scope No. 10, the sensing version is calculated. Amplification benefit is built on the chip, the operational amplifier package and compensation adjustment to help establish the voltage reference value. 1 2 * According to the sensing version described in item 10 of the scope of patent application, the arithmetic amplifier is built on the chip; the operational amplifier maintains a fixed gain; and the total time is one piece of the operational amplifier by adjusting the light emitting diode The current may change to establish the voltage reference. 3. The contact image as described in item 1 of the scope of the patent application, wherein the array of implemented elements includes: '1 crystal of a plurality of implemented photoelectric element passive pixel sensors for-one charge on a pixel, and It is converted into a voltage; "Each anthology of a plurality of installed retention capacitors" is used to receive and store the electric charge collected by the "device passive pixel sensor"; a plurality of actual reset transistors are used to reconstruct The real holder is installed so that it has a fixed reset voltage; the plural emitter emitter couplers are used to convert the electric charge of the real holder to a voltage signal; # 盗 上 Page 38—417333 Six 'patent application range. A plurality of implemented multiplex switches, each of which exposes ~ an optoelectronic element and the output circuit; an n-order digital scanning shift register, which has a plurality of Each wheel output end, each of which is coupled to one of a set of multiplexer switches to control the wheel input end;-a set crystal moon selector is used to send a set chip selector pulse wave to start the emitter follower Coupler; an implemented film buffer; and a plurality of implemented shift gates for separating the charge on the implemented passive pixel sensor and the charge on the holding capacitor 'and setting the implemented passive The charge on the pixel sensor is transferred to the actual holding capacitor, the n-stage shift register sequentially activates each of the actual photoelectric element passive pixel sensors, and each of the photoelectric element passive pixel sensors The device thus generates a set output signal, the set film warmer receives the set output signal, and when the n-stage shift register sequentially activates each successive set optoelectronic element passive pixel sensor, the η step shift Register sequentially reset each of a passive pixel sensor disposed in front of the real photovoltaic element, so that the black level with a level. 1 4 · The contact image sensing chip described in item 13 of the scope of patent application, wherein the dummy element array includes: a plurality of dummy passive pixel sensors for collecting a charge on each pixel * and It is converted into a voltage; a plurality of dummy retention capacitors for receiving and storing the charge collected by the dummy passive pixel sensor; a plurality of dummy reset transistors for resetting the dummy retention capacitors Page 39 6. Apply for a patent scope device to have a fixed reset voltage; a plurality of dummy emitter followers for converting the charge on the dummy hold capacitor into a voltage signal; a plurality of implemented multiplexers Switches, each of which is coupled to a dummy element and the output line;-an m-order digital scanning shift register having a plurality of output terminals, each of which is coupled to a control input of a dummy multiplexer switch A dummy chip selector for sending a dummy chip selector pulse to activate the emitter follower; a dummy movie buffer; and f dummy dummy transition poles for separating the dummy Passive pixel sensing = _ on the dummy holding capacitor, and transfers the charge on the f skinned pixel sensor to the dummy holding capacitor. The m-stage shift register sequentially starts the test. Helps each of the dummy passive pixel wheels to hide ^ ^, and thus generates a dummy m-th order Chiang Fang car ten M — &amp; — receives the dummy output signal, when the mu shift register sequentially From Move every _ test cry, the continuous passive dummy pixel sensor type silly go, straight mother a dummy passive eight pixel sensor in front of it to make it have a black level; compare the actual photoelectric component produced The component's 6f actual output signal from the output signal and the dummy click color g] m 1 are free to eliminate the color solid pattern noise and DC compensation electric wheel output signal in the actual output signal. . &Amp; into film Page 40 6. Scope of patent application 1 5 · As the first piece of patent application scope, wherein the contact image sensing crystal described in the actual device array 2 has a plurality of active pixel sensors, which are used to collect each charge, and It is converted into a voltage signal; "A plurality of actual holding capacitors are used to connect and store the components received by the active pixel sensor, and in particular, a plurality of actual sampling / holding open sets, each The switch uses a sample / hold pulse 0S / H to touch the generated hold capacitor to hold the voltage signal voltage signal Δν 'and then a plurality of implemented multiplex switches, each electrical component and the The output circuit is based on a set of light: a step-level digital obscure shift register, which has a plurality of output terminals: 3 output couplings-one of the implemented multiplex switches-the control input; the implemented chip The selector is used to emit a pulse wave of the implemented chip selector to activate the implemented active pixel sensor and at least one implemented film buffer. 1 6. As described in item 15 of the scope of patent application Contact image sensing Slice 'where the dummy element array includes: s a plurality of dummy active pixel sensors for collecting a charge on each pixel' and converting it into a / voltage signal; a plurality of dummy sampling / standby switches' each One switch is used to generate a sampling / hold pulse 0 s / h to trigger sampling of a voltage signal △ v, and then the dummy hold capacitor will hold the voltage signal; a plurality of dummy hold capacitors are used to store the dummy active Pixel Page 41 * 31 ^ 83 _ VI. The charge collected by the patented range sensor; a plurality of dummy multiplex switches, each of which is coupled to a dummy element and the output line; —m-order digital scanning cat shift A register having a plurality of output terminals, each of which is coupled to a control input terminal of a dummy multiplexer switch; a dummy chip selector 'for issuing a dummy chip selector pulse wave' to activate the dummy active A pixel sensor; and at least one dummy movie buffer. 1 7 * The contact image sensor chip described in item 13 of the scope of patent application 'wherein: each of the implemented passive pixel sensors includes an implemented photodiode and ~ an implemented V0G gate' the An actual photodiode is used to accumulate photocharges. The actual vQG gate has a voltage level that is adjusted between the high-order level and the low-order level of the transfer pulse wave 0τ, so the actual Set a certain limit level of several pieces of photoelectricity. 18. The contact image sensing chip as described in item 14 of the scope of patent application, wherein: each of the dummy passive pixel sensors includes a ρη junction diode and a dummy V0G gate electrode. The ρη junction diode is used to accumulate photocharges; the ρη junction diode can convert a charge signal into a voltage signal and provide a black level reference value; the dummy V0G gate has a voltage level, It is adjusted to be between the high level and the low level of the transfer pulse wave, so a certain limit level of the photodiode is set. Page 42 6 'Application for patent scope 1 9. The contact image sensing chip as described in item 14 of patent application scope' wherein the dummy emitter follower includes:-Self-scanning photodiode array (gold Oxygen semiconductor) transistor; an empty dummy layer transistor used as a loading resistor. It provides a fixed current when the voltage changes to stabilize the signal; and a power-saving transistor used to trigger the frame pulse wave, The dummy emitter follower is turned on in response to the frame pulse. 2 ◦. The contact image sensing chip described in item 15 of the patent application park, wherein each of the implemented active pixel sensors is an implemented photoelectric crystal active pixel sensor, which includes: An actual optoelectronic crystal is used to convert an optical signal into an electronic signal; an actual ρ η junction photodiode is used to avoid the low brightness problem of the actual optoelectronic crystal; Crystal 'is used to reset the base voltage of the actual optoelectronic crystal so that it has a fixed non-zero value; an actual capacitor is used to store the charge corresponding to the conversion signal; and an actual emitter reset voltage A crystal for resetting the emitter of the optoelectronic crystal in a grounded manner. 2 1. The contact image sensing chip described in item i 5 of the scope of patent application, wherein each of the implemented active pixel sensors is a photodiode active pixel sensor, which includes: a Set up a photodiode to apply a charge signal to each pixel Page 43 6. The scope of the patent application is converted into a voltage signal;-an actual reset transistor is used to reset the actual retention capacitor so that it has a fixed reset voltage; and an actual emitter follower is used to convert The charge on the actual holding capacitor is converted into a voltage signal. 2 2. The contact image sensor chip as described in item 16 of the scope of the patent application, wherein each of the dummy active pixel sensors includes: a dummy diode, which is equal to the size of the implemented optoelectronic element Since the dummy diode is covered by aluminum to block light from entering, the dummy diode is used to convert a charge signal on each pixel into a voltage signal; a dummy reset transistor is used to reset the A dummy hold capacitor is provided with a fixed reset voltage; and a dummy emitter follower is used to convert the charge on the dummy hold capacitor into a voltage signal. 2 3. The contact image sensing chip described in item 16 of the scope of patent application, which makes each of the dummy active pixel sensors a dummy photoelectric crystal active pixel sensor, including: The optoelectronic crystal is used to convert the ~ optical signal into an electronic signal; a dummy pn junction diode is used to avoid the low brightness problem of the dummy optoelectronic crystal: a dummy base reset transistor is used to reset the dummy The base voltage of the transistor has a fixed non-zero value; a dummy capacitor is used to store the charge corresponding to the conversion signal; and Page 44 41V-v 6. The scope of the patent application is used to reset the dummy by a ground. A dummy emitter resets the emitter of the transistor. Dagger: The contact-type image sensing chip described in item 6 of the patent application scope, with 1f · The pixel sensor includes at least two implemented rows, the implemented retention capacitors, and the implemented plurality of implemented active The set sampling / holding switch multiplexing switch; the plurality of dummy active pixel sensors including at least two dummy rows of the dummy sampling / holding switch, the dummy holding capacitor and the dummy multiplexing switch; and the at least two The implemented columns and the at least one dummy column are used as a correlated double sampling circuit to eliminate the reset noise of the implemented photodiode. 2 5 _The contact image sensing chip as described in item 21 of the scope of patent application, wherein the implemented emitter follower includes: an implemented metal-oxide semiconductor transistor; an implemented void layer transistor, and It is used as a loading resistor to provide a fixed current when the voltage is changed to stabilize the signal; and an actual power-saving transistor is used for triggering. The frame pulse wave The pulse wave turns on. , 2 Θ. The contact-type image sensing wafer described in item 1 of the scope of patent application, wherein the material of the shielding element is ILu. ′, 2 γ. The contact-type image sensing wafer as described in item 13 of the scope of patent application, wherein the implemented transfer gate is a polycrystalline silicon inter-electrode. / 2 8. The contact image sensor as described in item 13 of the scope of patent application Page 45 4173- 417233 6. Scope of patent application, in which the actual retention capacitor is a diffusion capacitor. 2 9 _ The contact image-sensing wafer described in item 13 of the scope of patent application, wherein the actual retention capacitor is a polycrystalline silicon capacitor. 30. The contact-type image sensing wafer as described in item 13 of the scope of the patent application, wherein the actual photodiode system is a P η # face photodiode. 3 1 · The contact-type image sensing wafer according to item 13 of the scope of patent application, wherein the actual photodiode system is a p-i-n photodiode. 3 2 · The contact image sensing wafer according to item 14 of the scope of patent application, wherein the dummy retention capacitor is a diffusion capacitor. 3 3 _ The contact type image sensing wafer described in item 14 of the scope of patent application, wherein the dummy transfer gate is a complex silicon gate. 3 4 · The contact image sensing wafer as described in item 17 of the scope of patent application, wherein the actual VQC gate is an ion implanted gate. 3 5 · The contact-type image sensing wafer according to item 17 of the scope of patent application, wherein the actual photodiode system is a pn junction photodiode. 36. The contact image-sensing wafer according to item 17 in the scope of the patent application, wherein the actual photodiode system is a p-i-n photodiode. 37. The contact image-sensing wafer according to item 18 of the scope of patent application, wherein the dummy VQe gate is an ion implanted gate. 3 8 * The contact image sensing wafer as described in item 21 of the scope of patent application, wherein the actual photodiode system is a pn junction photodiode. 3 9 * The contact image sensing wafer as described in item 21 of the scope of patent application, wherein the actual photodiode system is a p-i-n photodiode. 4 0 · The contact image sensor as described in item 22 of the scope of patent application Page 46 Page 47