TW411503B - Method of forming bottom anti-reflective coating on substrate - Google Patents

Method of forming bottom anti-reflective coating on substrate Download PDF

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Publication number
TW411503B
TW411503B TW088112558A TW88112558A TW411503B TW 411503 B TW411503 B TW 411503B TW 088112558 A TW088112558 A TW 088112558A TW 88112558 A TW88112558 A TW 88112558A TW 411503 B TW411503 B TW 411503B
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TW
Taiwan
Prior art keywords
scope
patent application
item
reflection coating
gas
Prior art date
Application number
TW088112558A
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Chinese (zh)
Inventor
Liou-Gung Lin
Mei-Ru Guo
Shin-Pu Jeng
Chuen-Shing Chen
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Taiwan Semiconductor Mfg
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Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW088112558A priority Critical patent/TW411503B/en
Priority to US09/387,730 priority patent/US6300240B1/en
Application granted granted Critical
Publication of TW411503B publication Critical patent/TW411503B/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition

Abstract

A method of forming bottom anti-reflective coating on a semiconductor substrate is described, using helium and compound gas, or compound gas alone as reacting gas in a deposition process. The compound gas may consist ofcarbon atom, hydrogen atom and halogen element. The chemical formula of the compound gas is CxHyXz, where x is between 0 and 5, y is between 0 and 9, and z is between 0 and 9.

Description

41ί503 Α7 Β7 經濟部中央標準局員工消費合作社印製 五、發明説明（） 5-1發明領域： 本發明是有關一種在基板上形成積體電路的方法，特別 有關於一種在基板上沈積底部抗反射塗覆的方法。 5-2發明背景： 一般在半導體晶圓上定義圖案的方法為使用微影製 程，將光罩上的圖案投影在一基材上，對在基材上的光阻 材料進行曝光。在光阻材料被曝光之後，移除光阻材料的 曝光區域或未曝光區域，一個與光罩上圖案相同的圖案就 會被形成在基材之上。具有圖案定義的光阻層，通常作為 蝕刻製程的蝕刻罩幕，此蝕刻製程在半導體基材上的膜層 形成圖案。 一般而言，積體電路的線寬限制決定於微影製程的能 力，當積體電路的線寬越小，積體電路的積集度會越高。 除此之外，形成在半導體基材上之圖案的形狀，也是一項 決定圖案是否被良好定義的重要因素之一。通常，光阻圖 案應該具有足夠的準直度，使得在光阻圖案之下的半導體 基材表面，能夠形成完美的圖案 一種在半導體基材上形成準直光阻圈案的方法，為在 一膜層上形成底層抗反射塗覆（bottom anti-reflective coating, BARC)，然後蝕刻製程在此膜層上形成圊案。在 微影製程的過程中，抗反射圖案吸收投射在晶圓上的光 2 本紙^尺度適用尹國國家標f ( CNS ) A4規格（2丨0X297公釐） -------------裝----^---訂-----：I 線 (請先閱讀背面之注意事項再矽舄本頁) 經濟部中央標準局貝工消費合作社印製 411503 A7 _______B7五、發明説明（） 線’並減少從晶圓反射出來的光線，以在半導體晶圚上定 義準直的圖案。 底層抗反射塗覆材料包含有機材料與無機材料，然而 準直的圖案很難形成在具有有機底層抗反射塗覆的膜層之 上。一般而言，氮氧化矽材料被認為是一種無機底層抗反 射材料，很容易形成在半導艟基材之上，但是需要使用濕 蝕刻製程，將無機底層抗反射塗覆從半導髏基材的表面移 開。 有機底層抗反射塗覆是用以解決因為光阻材料的反射 光線，然而，有機抗反射塗覆具有平坦化的效果，非常適 於使用於微影製程之中，但是對不同厚度的抗反射塗覆， 是非常不容易加以蝕刻。氮氧化矽抗反射塗覆解決因為平 坦薄膜沈積所造成的不同厚度問題，而且氮氧化矽抗反射 塗覆的缺點在於圖案定義後，很難從半導想基材或膜層的 表面加以移除》 因此’需要一種新穎的底層抗反射塗覆材料，可均今 的形成在半導體基材之上，而且可以使用習知的乾蝕刻製 程將底層抗反射塗覆材料從半導體基材或膜層表面加以移 除。 在西元 1992 年的 SPIE vol. 1674 的 Optical/Laser Microlithography V 期刊之中，從第 350 到 361 頁，Yurika Suda等人公開一篇論文，標題為》’ a New Anti-reflective Layer for Deep UV lithography"。在這篇論文之中，在次微 米與四分支一微米的KrF準分子雷射的微影製程之中，使 3 -------.----^--.裝---^--「訂--------:線 (請先閱讀背面之注意事項沔填艿本頁) 本紙張尺度適用中國國家標隼（CNS ) Λ4規格（2丨0X297公箱） 經濟部中央標率局貝工消费合作社印製 41-50341ί503 Α7 Β7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the Invention (5-1) Field of the Invention: The present invention relates to a method for forming integrated circuits on a substrate, and more particularly to a method for depositing a bottom resistance on a substrate. Method of reflection coating. 5-2 Background of the Invention: Generally, a method for defining a pattern on a semiconductor wafer is to use a lithography process to project the pattern on a photomask onto a substrate and expose the photoresist material on the substrate. After the photoresist material is exposed, the exposed or unexposed areas of the photoresist material are removed, and a pattern identical to the pattern on the photomask is formed on the substrate. A photoresist layer with a pattern definition is usually used as an etch mask for an etching process. This etching process forms a pattern on a film layer on a semiconductor substrate. Generally speaking, the limit of the line width of an integrated circuit depends on the ability of the lithography process. When the line width of the integrated circuit is smaller, the integration degree of the integrated circuit will be higher. In addition, the shape of the pattern formed on the semiconductor substrate is one of the important factors that determines whether the pattern is well defined. Generally, the photoresist pattern should have sufficient collimation so that the surface of the semiconductor substrate under the photoresist pattern can form a perfect pattern. A method of forming a collimated photoresist circle on a semiconductor substrate is A bottom anti-reflective coating (BARC) is formed on the film layer, and then a pattern is formed on the film layer by an etching process. During the lithography process, the anti-reflection pattern absorbs the light projected on the wafer. 2 This paper ^ size applies to the national standard f (CNS) A4 specification (2 丨 0X297 mm) --------- ---- Equipment ---- ^ --- Order -----: I line (please read the precautions on the back first, and then this page). Printed by the Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 411503 A7 _______B7 5. Description of the invention () line 'and reduce the light reflected from the wafer to define a collimated pattern on the semiconductor wafer. The bottom anti-reflection coating material includes organic materials and inorganic materials. However, it is difficult to form a collimated pattern on a film having an organic bottom anti-reflection coating. Generally speaking, silicon oxynitride material is considered as an inorganic anti-reflective material, which can be easily formed on the semiconductor substrate. However, it is necessary to use a wet etching process to coat the inorganic anti-reflective substrate from the semiconductor substrate. The surface is removed. The organic bottom anti-reflection coating is used to solve the reflection of light due to the photoresist material. However, the organic anti-reflection coating has a flattening effect and is very suitable for use in the lithography process. Overlapping is very difficult to etch. Silicon oxynitride anti-reflection coating solves the problem of different thickness caused by flat film deposition, and the disadvantage of silicon oxynitride antireflection coating is that it is difficult to remove the surface of the semiconducting substrate or film layer after the pattern is defined. 》 Therefore, 'A novel bottom anti-reflection coating material is needed, which can be uniformly formed on the semiconductor substrate, and the bottom anti-reflection coating material can be removed from the surface of the semiconductor substrate or film layer using a conventional dry etching process. Remove it. In the 1992 Journal of Optical / Laser Microlithography V of SPIE vol. 1674, from page 350 to 361, Yurika Suda et al. Published a paper entitled "'A New Anti-reflective Layer for Deep UV lithography " . In this paper, in the lithography process of KrF excimer laser with submicron and four branches and one micron, the 3 -------.---- ^-. Equipment --- ^-"Order --------: Line (Please read the precautions on the back first, fill in this page) This paper size applies to China National Standards (CNS) Λ4 specifications (2 丨 0X297 public carton) Economy Printed by the Central Standards Bureau of the Ministry of Shellfish Consumer Cooperatives 41-503

五、發明説明（） 用一抗反射層（anti-relfective layer，ARL)，其優點包括具 有較佳的臨界尺寸（critical dimension, C.D·)。在光阻層之 下的a-C:H抗反射層被發現具有較佳的條件，而且此種抗 反射層為有機材料，能夠與光阻層同時被去除。並且，因 為具有高的曝光與聚焦深度，此種抗反射層適於使用在單 一光阻之KrF準分子雷射微影製程之中。 5-3發明目的及概述： 本發明揭露一種在基材上形成抗反射塗覆的方法，而且 本發明提供一種在蝕刻反應室或化學氣相沈積反應室之 中，沈積底部抗反射塗覆的配方。在配方中的反應氣體包 含數種氣體，為攜帶氣體與複合氣體，或者是單獨使用複 合氣體直接注入反應室之中。複合氣體包含齒素原子、碳 原子與氩原子。複合氣體的化學通式為CxHyXz，X為鹵素 元素，其中X的範圍係從〇到5之間，y的範圍係從〇到9 之間，Z的範圍係從0到9之間。除此之外，在反應室之中 的製程壓力與施加於反應室的電漿功率，也在配方之中被 清楚定義β 5-4囷式簡單說明·· 本發明的許多發明目的與優點，將會因為參考下列的詳 細說明，變得更容易被鑑赏與瞭解，同時參酌下列的圊式 4 本紙張尺度適/9中國國家標準（CXS ) Λ4規格< 2丨0X 29?公趫)— ----—----- . . ,1 裝---.--Ί 訂--------線 Τ « (請先閱讀背面之;i意事項再填踔本頁) 41150' 411503 經濟部中央橾準局貝工消費合作社印製 A7 B7 五、發明説明（） 加以說明，其中： 第一圖係顯示半導體基材的剖面示意囷，一疊層覆蓋在 半導體基材之上，光阻圖案定義在叠層之上，其中 疊層包括一底部抗反射塗覆，以減少在定義光阻圖 案的微影製程之中的光線反射； 第二圖係顯示半導體基材的剖面示意圖，蝕刻疊層結構， 並以光阻層作為蝕刻罩幕； 第三圖係顯示半導體基材的剖面示意圖，在半導體基材 上形成一圖案； 第四A圖係顯示積體電路圖案的俯視圖，利用本發明之 抗反射塗覆層，覆蓋在半導體基材的表面，使得積 體電路具有清楚的圖案，在此圖之t積體電路的線 寬為0.16微米； 第四B圖係顯示積體電路圖案的俯視圖，利用本發明之 抗反射塗覆層，覆蓋在半導體基材的表面，使得積 體電路具有清楚的圊案，在此圖之中積體電路的線 寬為0.18微米； 第五A圖係顯示積逋電路之接觸孔的俯視圖，利用本發 明之抗反射塗覆層，使得積體電路之接觸孔具有清 楚的圊案，在此圖之中積體電路之接觸孔的尺寸為 0.15微米；以及 第五B圖係顯示積體電路之接觸孔的俯視圖，利用本發 明之抗反射塗覆層，使得積體電路之接觸孔具有清 楚的圖案，在此圖之中積體電路之接觸孔的尺寸為 本紙張尺度逋用中國國家標準（CMS ) Α4規格（210 X 297公釐） ----------¾------ΪΤ------.^ (請先59讀背面之注意事項η 寫本買) . 經濟部中央標率局員Η消費合作杜印掣 411503 A7 -------- B7____ 五、發明説明（） 0.18微米》 5-5發明詳細說明： 本發明揭露一種在蝕刻反應室或化學氣相沈積反應室之 中’在基材表面形成底部抗反射塗覆(BARC)的方法。而且’ 本發明揭露在蝕刻反應室或化學氣相沈積反應室之中，沈 積底部抗反射塗覆的配方。在配方中的反應氣體包含數種 氣體’為攜帶氣體與複合氣體，或者單獨使用一種複合氣 體’此複合氣體包含鹵素原子、碳原子與氫原子。複合氣 體的化學式為CxHyXz，X為鹵素元素，其中X的範圍係介 於0到5之間’ y的範圍係介於〇到9之間，Z的範圍係介 於〇到9之間。除此之外，在配方中清楚定義在反應室之 中的工作壓力與施加於反應室的功率。 以下將參閱第一圖至第三圖說明在一臈層上沈積底部抗 反射塗覆的步驟。請參閱第一圖，提供一半導體基材1〇〇， 在半導體基材100之上製造積體電路。一膜層110形成在 基材100之上，此膜層110將在下列的步驟之中被姓刻。 —抗反射塗覆120沈積在膜層11〇之上，利用高速旋塗方 式，在抗反射塗覆120之上形成光阻層200 〇因為抗反射塗 覆120在光阻層200之下’此抗反射塗覆120作為光阻層2〇〇 的底部抗反射塗覆。在光阻層200上形成囷案的微影製程 中，底部抗反射塗覆會減少從膜層與基材1〇〇的反射 光線，微影製程會在光阻層200之中形成圖案，此圖案具 6 本紙張尺度遘用中國國家揉準（CNS > Α4見格（210 χ 297公董） 丨I 裝 „訂 線 4 , (請允閱讀背rg之注意事項足 本頁) A7 411503 _B7___ 五、發明説明（） 有準直的形狀’而且在膜層110上之圖案的絕對尺寸能夠 很好的被控制住（如第二圖所示）。請參閱第三圖’使用一 般的技術，移除底部抗反射塗覆層120與光阻層200。 底部抗反射塗復層120在反應室之中被沈積，而形成底 部抗反射塗覆層120的配方包括注入反應室的反應氣體， 其包含攜帶氣體與複合氣體’複合氣體的化學式為CxHyXz， X為鹵素元素。在一較佳具體實施例之中，配方中的攜帶 氣體為氦氣或氬氣’在化學式之中的鹵素為氟原子（F)、 氣原子(C1)、溴原子（Br)與碘原子(I)。化學式的底標X的 範圍係在0到5之間，底標y的範圍係在〇到9之間，底 標z的範圍係在0到9之間。而且，沈積抗反射塗覆層120 所需的製程壓力係介於1到iOOmtorr之間’反應室的電漿 源功率係介於100到1900瓦特之間’反應室的偏壓功率係 介於0到500瓦特之間。在一較佳具體實施例之中，攜帶 氣體注入反應室的流速係介於〇到lOOsccm之間》在本發 明之一較佳實施例之中，反應氣體可單獨使用複合氣體」 直接注入反應室之中，不需要攜帶氣體的帶入。 在本發明的較佳實施例之中，複合氣體係選自CH4、CF4、CC14、 CBr4' CI4' CHF3、CHC13、CHBr3、Cffi3、CH2F2、CH2C12、CH2Br2、 CH2I2、CH3F、CH3a、CH3Br、CH3I、CFC13、CF2C12、CClBr3、CCl2Br2、 CC12I2、CCl3Br、CC13I、CHFC12、CHClBr2、CHC1I2、CHCl2Br、CHC12I、 CHBrI2、CHBr2I、CH2Fa、CH2ClBr、CH2CU、CH2Brf、CHFCIBr、 C2H2、(¾、(¾、C2C14、C2C16、C2Br2、C2Br4、C2Br6、C2I2、C2I4、 C2HCl、C2HC1、C2HC13、C2HC15、C2HBr、C2HBr3、C2HBr5、C2HI5、 7 本紙張尺度逋用中國國家橾隼（CMS ) Α4現格（2L0 X 297公釐） ----------^------t------^ * . «' (請先閱讀背面之注$項苒 Γ本頁) 經濟部中央標隼局貝工消费合作社印衆 經濟部中央樣準局負工消费合作社印製 411503 A7 _B7____ 五、發明説明（） C2H2F2、(:2H2C12、C2H2Ci4、C2H2Br2、C2H2Br4、C2H2I2、C2H3F、C2H3C1、 C2H3C13、C2H3Br、C2H3Br3、C2H3I、C2H3I3、C2H4F2、C2H4C12、C2H4Br2、 C2H5F、QHsQ、C2H5Br、C2H5I、C2FC13、C2FC15、C2FBr5、C2F2C12、 C2F2C14、C2F2Br4、C2F3C1、C2F3C13、C2F3Br3、C2ClBr5、C2Cl2Br4、 C2Cl3Br3、C2Cl4Br2、C2HFC14、C2HFBr4、C2HF2Br3、C2HF3Br2、 C2HClBr4、C2HCl2Br3、C2HCl3Br2、C2H2FC13、C2H2FBr3、C2H2F2C12、 C2H2F3C卜 C2H2ClBr3、C2H2Cl2Br2、C2H2Cl3Br、C2H3FBr2、C2H3F2a、 C2H3F2Br、C2H3F2I、C2H3ClBr2、C2H3Cl2Br、C2H3C12I、C2H4ClBr、 C2H4C1I、C2H4BrI、C2HFCl2Br2、C3H4、(:此、(:3H8、C3C18、C3HC17、 C3H2Br2' C3H3CI' C3H3Br' C3H3I > C3H4C12' C3H4Br2' C3H5C1' C3H5CI3 > C3H5Br ^ C3H5Br3' C3H5I > ' C3H7F > C3H7C1 ' C3H7Br、C3H7I、(¾、C6H8、C6Ht0、CAi、QH14、C6Br6、C6I6、 C6HC15、C6HBr5、C6HI5、<：典(：14、C6H2Br4、C6H2I4、C6H3C13、C6H3Br3、 C6H3I3、C6H4C12、C6H4Br2、C6H4I2、C6H5F、C6H5Q、切和、C6H5I、 、C6H"a、C6HuBr、C6H„I、C6H12C12、C6H12Br2、 C6H13C hC6H13Br、C6H13I、C6H4Fa、C6H4FBr、C6H4FI、C6H4ClB.r、 C6H4C1I、C6H4BrI、C7H8、（:7H1()、C7H12、C7Hl4、C7H16、C7H5C13、 C7H6C12' ' C7H7F' C7H7C1' C7H7Br > C7H7I > C7H15C1' C7Hl5Br ' QF^ClBr、、C8H8、C8H1()、C8H12、C8H14、C8H16、C8Hl8、C8H7C卜 C8H7Br、QHA、C8H8Br2、CAC卜 CgH^Br、、C8H17F、C8H17Q、 C8H17Br、C8HnI、0¾、C9HW、(：迟12、C9Hl6、(：办8、C9H2()、、 (:办和與C9Hl9I的其中之一，或是上述氣體的任意組合。 在本發明的較佳具體實施例之中，配方的複合氣體包含 CHF3、CH3F、CH2F2、C2F6、C2HF# C4F8 的任意混合氣體， 8 本紙張尺度適用中國國家揉準（CNS ) A4规格（210X297公羞） 裝 訂 線 (诗乇聞讀背&之注意事項真 3本頁) ， .V. Description of the invention () The use of an anti-relfective layer (ARL) has the advantages of having a better critical dimension (C.D.). The a-C: H anti-reflection layer under the photoresist layer was found to have better conditions, and this anti-reflection layer is an organic material and can be removed simultaneously with the photoresist layer. Moreover, because of its high exposure and focus depth, this anti-reflection layer is suitable for use in a single photoresist KrF excimer laser lithography process. 5-3 Purpose and Summary of the Invention: The present invention discloses a method for forming an anti-reflection coating on a substrate, and the present invention provides a method for depositing an anti-reflection coating at the bottom in an etching reaction chamber or a chemical vapor deposition reaction chamber. formula. The reaction gas in the formula contains several kinds of gas, which are carrier gas and composite gas, or the composite gas is used directly and injected directly into the reaction chamber. The complex gas contains a halogen atom, a carbon atom, and an argon atom. The chemical formula of the composite gas is CxHyXz, X is a halogen element, where X ranges from 0 to 5, y ranges from 0 to 9, and Z ranges from 0 to 9. In addition, the process pressure in the reaction chamber and the plasma power applied to the reaction chamber are also clearly defined in the formula. Β 5-4 囷 Simple explanation ·· Many of the invention's objects and advantages, It will become easier to appreciate and understand by referring to the following detailed instructions. At the same time, refer to the following formula 4 Paper size is appropriate / 9 Chinese National Standard (CXS) Λ4 specifications < 2 丨 0X 29? Public)) — ----—-----.., 1 Pack ---.-- Ί Order -------- Line T «(Please read the back; i-notes before filling out this page) 41150 '411503 Printed by the Central Bureau of Quasi-Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, A7 B7 V. Description of the invention () Explained, of which: The first picture shows a schematic cross-section of a semiconductor substrate, and a stack covers the semiconductor substrate Above, the photoresist pattern is defined on the stack, where the stack includes a bottom anti-reflection coating to reduce light reflection during the lithography process that defines the photoresist pattern; the second figure shows a cross section of a semiconductor substrate Schematic diagram, etching the stacked structure, and using a photoresist layer as an etching mask; the third diagram shows a semiconductor A schematic cross-sectional view of a material is used to form a pattern on a semiconductor substrate. FIG. 4A is a top view showing a integrated circuit pattern. The surface of the semiconductor substrate is covered with the anti-reflection coating layer of the present invention, so that the integrated circuit has The clear pattern, the line width of the integrated circuit in this figure is 0.16 microns; the fourth diagram B is a top view showing the integrated circuit pattern, using the anti-reflection coating layer of the present invention to cover the surface of the semiconductor substrate, The integrated circuit has a clear scheme. In this figure, the line width of the integrated circuit is 0.18 micrometers. FIG. 5A is a top view showing a contact hole of the integrated circuit. Using the anti-reflection coating layer of the present invention, Make the contact holes of the integrated circuit have a clear scheme. In this figure, the size of the contact holes of the integrated circuit is 0.15 micrometers; and Figure 5B is a top view showing the contact holes of the integrated circuit. The anti-reflection coating layer makes the contact holes of the integrated circuit have a clear pattern. In this figure, the dimensions of the contact holes of the integrated circuit are based on the paper standard, using the Chinese National Standard (CMS) Α4 standard. (210 X 297 mm) ---------- ¾ ------ ΪΤ ------. ^ (Please read the notes on the back 59 first to write in hard copy). Central Ministry of Economic Affairs Standards Bureau member, consumer cooperation, Du Yinhua 411503 A7 -------- B7____ V. Description of the invention () 0.18 microns "5-5 Detailed description of the invention: The present invention discloses a reaction in an etching reaction chamber or a chemical vapor deposition reaction. In-chamber method for forming a bottom anti-reflective coating (BARC) on the surface of a substrate. Moreover, the present invention discloses a formula for depositing an anti-reflection coating at the bottom in an etching reaction chamber or a chemical vapor deposition reaction chamber. The reaction gas in the formula contains several kinds of gases 'as a carrier gas and a composite gas, or a composite gas alone'. This composite gas contains a halogen atom, a carbon atom, and a hydrogen atom. The chemical formula of the composite gas is CxHyXz, X is a halogen element, where X ranges from 0 to 5 ', y ranges from 0 to 9, and Z ranges from 0 to 9. In addition, the working pressure in the reaction chamber and the power applied to the reaction chamber are clearly defined in the recipe. The steps of depositing the bottom anti-reflection coating on a stack of layers will be described below with reference to the first to third drawings. Referring to the first figure, a semiconductor substrate 100 is provided to fabricate an integrated circuit on the semiconductor substrate 100. A film layer 110 is formed on the substrate 100. This film layer 110 will be engraved in the following steps. — Anti-reflection coating 120 is deposited on the film layer 110, and a high-speed spin coating method is used to form a photoresist layer 200 on the anti-reflection coating 120. Because the anti-reflection coating 120 is under the photoresist layer 200 The anti-reflection coating 120 is used as the bottom anti-reflection coating of the photoresist layer 2000. In the photolithography process for forming a pattern on the photoresist layer 200, the bottom anti-reflection coating will reduce the reflected light from the film layer and the substrate 100. The photolithography process will form a pattern in the photoresist layer 200. The pattern has 6 paper sizes. The standard is Chinese national standard (CNS > Α4 see grid (210 χ 297)) 丨 I Binding line 4, (please read the precautions for the back rg on this page) A7 411503 _B7___ V. Description of the invention () It has a collimated shape 'and the absolute size of the pattern on the film layer 110 can be well controlled (as shown in the second picture). Please refer to the third picture' using general technology, The bottom anti-reflection coating layer 120 and the photoresist layer 200 are removed. The bottom anti-reflection coating layer 120 is deposited in the reaction chamber, and the formula for forming the bottom anti-reflection coating layer 120 includes a reaction gas injected into the reaction chamber, which Contains a carrier gas and a compound gas. The chemical formula of the compound gas is CxHyXz, and X is a halogen element. In a preferred embodiment, the carrier gas in the formula is helium or argon. The halogen in the chemical formula is a fluorine atom. (F), gas atom (C1), bromine atom Br) and iodine atom (I). The base X of the chemical formula ranges from 0 to 5, the base y ranges from 0 to 9, and the base z ranges from 0 to 9. In addition, the process pressure required to deposit the anti-reflection coating 120 is between 1 and 100 mtorr. The plasma source power of the reaction chamber is between 100 and 1900 watts. The bias power of the reaction chamber is between 0 and 0. Between 500 and 500 watts. In a preferred embodiment, the flow rate of the carrier gas into the reaction chamber is between 0 and 100 sccm. "In a preferred embodiment of the present invention, the reaction gas can be used alone and compounded. "Gas" is directly injected into the reaction chamber, and no carrying of gas is required. In the preferred embodiment of the present invention, the composite gas system is selected from CH4, CF4, CC14, CBr4 'CI4' CHF3, CHC13, CHBr3, Cffi3 , CH2F2, CH2C12, CH2Br2, CH2I2, CH3F, CH3a, CH3Br, CH3I, CFC13, CF2C12, CClBr3, CCl2Br2, CC12I2, CCl3Br, CC13I, CHFC12, CHClBr2, CHC1I2, CHCl2Br, CHC12I, CHCHIC2, CH2I2, Br2 , CH2Brf, CHFCIBr, C2H2, (¾, (¾, C2C14, C2C16 C2Br2, C2Br4, C2Br6, C2I2, C2I4, C2HCl, C2HC1, C2HC13, C2HC15, C2HBr, C2HBr3, C2HBr5, C2HI5, 7 This paper uses China National Standard (CMS) A4 (2L0 X 297 mm)- --------- ^ ------ t ------ ^ *. «'(please read the note on the back of this page first) This page) Printed by the Central Procurement Bureau of the Ministry of Economics and Consumer Affairs of the Consumer Cooperative, printed by the Consumer Cooperatives 411503 A7 _B7____ V. Description of the invention () C2H2F2, (: 2H2C12, C2H2Ci4, C2H2Br2, C2H2Br4, C2H2I2, C2H3F, C2H3C1, C2H3Br3, C2H3Br, C2H3 , C2H3I3, C2H4F2, C2H4C12, C2H4Br2, C2H5F, QHsQ, C2H5Br, C2H5I, C2FC13, C2FC15, C2FBr5, C2F2C12, C2F2C14, C2F2Br4, C2F3C1, C2F3C13, C2F3Br3, C2ClBr5, C2Cl2Br4, C2Cl3Br3, C2Cl4Br2, C2HFC14, C2HFBr4, C2HF2Br3, C2HF3Br2 , C2HClBr4, C2HCl2Br3, C2HCl3Br2, C2H2FC13, C2H2FBr3, C2H2F2C12, C2H2F3C Bu C2H2ClBr3, C2H2Cl2Br2, C2H2Cl3Br, C2H3FBr2, C2H3F2a, C2H3F2Br, C2H3F2I, C2H3ClBr2, C2H3Cl2Br, C2H3C12I, C2H4ClBr, C2H4C1I, C2H4BrI C2HFCl2Br2, C3H4, (: this, (: 3H8, C3C18, C3HC17, C3H2Br2 'C3H3CI' C3H3Br 'C3H3I > C3H4C12' C3H4Br2 'C3H5C1 & C3H5I3 C3H5H3C1 C3H5H3C7C1 , (¾, C6H8, C6Ht0, CAi, QH14, C6Br6, C6I6, C6HC15, C6HBr5, C6HI5, <: Code (: 14, C6H2Br4, C6H2I4, C6H3C13, C6H3Br3, C6H3I3, C6H4, C6H4 Shehe, C6H5I,, C6H " a, C6HuBr, C6H, I, C6H12C12, C6H12Br2, C6H13C hC6H13Br, C6H13I, C6H4Fa, C6H4FBr, C6H4FI, C6H4ClB.r, C6H4C1, C6H4C1 , C7H16, C7H5C13, C7H6C12 '' C7H7F 'C7H7C1' C7H7Br > C7H7I > C7H15C1 'C7Hl5Br' QF ^ ClBr, C8H8, C8H1 (), C8H12, C8H14, 8C7, 8C8C8 CgH ^ Br ,, C8H17F, C8H17Q, C8H17Br, C8HnI, 0¾, C9HW, (: Late 12, C9Hl6, (: Office 8, C9H2 () ,, (: Office and one of C9Hl9I, or one of the above gases) Any combination of. In the preferred embodiment of the present invention, the compound gas of the formula includes any mixed gas of CHF3, CH3F, CH2F2, C2F6, C2HF # C4F8. 8 This paper size is applicable to China National Standard (CNS) A4 (210X297) (Shame) gutter (Notes on Shi Yanwen read back & really 3 pages),.

Claims (1)

經濟部智慧財產局員工消費合作杜印製 A8 B8 C8 ------- - D8 __ 、申請專利範圍 1’種有機抗反射塗覆係利用反應氣體加以形成，該反應氣 體至少包含複合氣體，該複合氣體的化學通式為CxHyXz ’ 其中X為邊素元素，該化學通式CxHyXz之該X的範圍是 從〇到5，該y的範圍是從〇到9,該z的範圍係介於〇 到9。 2·如申請專利範圍第丨項所述之有機抗反射塗覆，其中該複 合氣體在注入一反應室時，是混合一攜帶氣體》 3. 如申請專利範圍第2項所述之有機抗反射塗覆，其中該攜 帶氣體注入該反應室的流速係介於0到lOOsccm之間。 4. 如申請專利範圍第2項所述之有機抗反射塗覆，其中該攜 帶氣體係選自氦氣與氬氣所組成群組的其中之一。 5. 如申請專利範圍第1項所述之有機抗反射塗覆，其中該抗 反射塗覆是形成於化學氣相沈積反應室之中，該化學氣相 沈積反應室的電漿源功率係介於100到1900瓦特，該化 學氣相沈積反應室的偏壓功率係介於〇到500瓦特。 裝---.--ΊΪΤ------線 (請先閱讀背面之注意事項其填寫本頁) 經濟部智慧財產局員工消費合作社印製 411503 A8 B8 C8 D8六、申請專利範圍 7. 如申請專利範圍第1項所述之有機抗反射塗覆，其中該鹵 素元素係選自氟原子（F)、氣原子（C1)、溴原子（Br)與碘原 子（I)所組成群組的其中之一。 8. 如申請專利範圍第1項所述之有機抗反射塗覆，其中該複 合氣體係選自 chf3、ch3f、ch2f2、c2f6、c2hf5、C4Fs 與上述氣體的任意組合所組成群組的其中之一。 9. 如申請專利範圍第8項所述之有機抗反射塗覆，其中該 CHF3的流量係介於0到lOOsccm之間，該CH3F的流量 係介於0到lOOsccm之間，該CH2F2的流量係介於〇到 lOOsccm之間，該C2F6的流量係介於0到100 seem之間， 該C2HF5的流量係介於0到100 seem之間，該C4F8的流 量係介於0到100 seem之間。 10. 如申請專利範圍第1項所述之有機抗反射塗覆，其中.該 有機抗反射塗覆是形成於製程壓力係介於1到200mtorr 之間。 11. 一種形成有機抗反射塗覆的方法，至少包含； 提供一基材；以及 係使用反應氣體沈積一抗反射塗覆在該基材之上，該反 應氣體至少包含複合氣體，其中該複合氣體的化學通 式為CxHyXz，X為鹵素元素，X係介於0到5之間，y I I LI —lu ___I 良 _ I ! n I —丁— 1 I I I I 象 (諦先閲讀背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家搮隼（CNS ) A4规格（210X297公釐） 經濟部智慧財產局員工消費合作社印 411503 A8 B8 C8 __D8 六、申請專利範圍 係介於0到9之間，z係介於0到9之間。 12. 如申請專利範圍第11項所述之方法’其申該複合氣體與 攜帶氣體混合，注入反應室之令。 13. 如申請專利範圍第12項所述之方法’其中該搞帶氣體系 選自氦氣與氬氣所組成群組的其中之一。 14. 如申請專利範圍第12項所述之方法，其中該搞帶氣體的 流量係介於0到100 seem之間。 15·如申請專利範圍第u項所述之方法，其中該抗反射塗覆 是形成於化學氣相沈積反應室之中’該化學氣相沈積反應 室的電漿源功率係介於100到1900瓦特，該化學氣相沈 積反應室的偏壓功率係介於0到500瓦特》 16. 如申請專利範圍第11項所述之方法，其中該抗反射塗覆 是形成於蝕刻反應室之中，該蝕刻反應室的電漿源功率係 介於100到1900瓦特，該蝕刻反應室的偏壓功率係介於 〇到500瓦特。 17. 如申請專利範圍第1!項所述之方法’其中該齒素元素係 選自氟原子(F)、氣原子（C1)、溴原子(Br)與碘原子⑴所組 成群組的其中之一。 本紙張从適用ta®家梂準（CNS)以祕（2似297公着） I n I 線 *' (請先聞讀背面之注意事項善填寫本頁) 411503 8 8 8 8 ABCD 六、申請專利範圍 18. 如申請專利範圍第11項所述之方法，其中該複合氣體係 選自 CHF3、CH3F、CH2F2、C2F6、C2HF5、C4FS 與上述氣 體的任意組合所組成群組的其中之一。 19. 如申請專利範圍第18項所述之方法，其中該CHF3的流 量係介於0到lOOsccm之間，該CH3F的流量係介於0到 lOOsccm之間，該CH2F2的流量係介於0到lOOsccm之間， 該C2F6的流量係介於0到100 seem之間，該C2HF5的流 量係介於0到100 seem之間，該C4FS的流量係介於0到 100 seem 之間。 20. 如申請專利範圍第11項所述之方法，其令該抗反射塗覆 是形成於製程壓力係介於1到200mtorr之間。 ---1--.----装----；---：-訂------線 ·* (請先閱讀背面之注意事項再填寫本f ) 經濟部智慧財產局員工消費合作社印製 14 本紙張尺度逋用中國國家揉準（CNS) A4说格（210X297公釐）Consumption cooperation between employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by A8 B8 C8 --------D8 __, patent application scope 1 'organic anti-reflective coating system is formed by using a reactive gas, which contains at least a compound gas The chemical formula of the composite gas is CxHyXz ', where X is a marginal element. The chemical formula of CxHyXz is that the range of X is from 0 to 5, the range of y is from 0 to 9, and the range of z is introduced. From 0 to 9. 2. The organic anti-reflection coating according to item 丨 of the scope of patent application, wherein the composite gas is mixed with a carrier gas when injected into a reaction chamber. 3. The organic anti-reflection according to item 2 of the scope of patent application Coating, wherein the flow rate of the carrier gas into the reaction chamber is between 0 and 100 sccm. 4. The organic anti-reflection coating according to item 2 of the patent application scope, wherein the carrier gas system is selected from one of the group consisting of helium and argon. 5. The organic anti-reflection coating according to item 1 of the scope of the patent application, wherein the anti-reflection coating is formed in a chemical vapor deposition reaction chamber, and the plasma source power of the chemical vapor deposition reaction chamber is introduced. From 100 to 1900 watts, the bias power of the chemical vapor deposition reaction chamber ranges from 0 to 500 watts. ---.-- ΊΪΤ ------ line (please read the precautions on the back and fill out this page first) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 411503 A8 B8 C8 D8 6. Scope of patent application 7. The organic anti-reflection coating according to item 1 of the scope of the patent application, wherein the halogen element is selected from the group consisting of a fluorine atom (F), a gas atom (C1), a bromine atom (Br), and an iodine atom (I). One of them. 8. The organic anti-reflective coating according to item 1 of the scope of the patent application, wherein the composite gas system is selected from the group consisting of chf3, ch3f, ch2f2, c2f6, c2hf5, C4Fs and any combination of the above gases . 9. The organic anti-reflection coating according to item 8 in the scope of the patent application, wherein the flow rate of the CHF3 is between 0 and 100 sccm, the flow rate of the CH3F is between 0 and 100 sccm, and the flow rate of the CH2F2 is Between 0 and 100 sccm, the flow rate of the C2F6 is between 0 and 100 seem, the flow rate of the C2HF5 is between 0 and 100 seem, and the flow rate of the C4F8 is between 0 and 100 seem. 10. The organic anti-reflection coating according to item 1 of the scope of patent application, wherein the organic anti-reflection coating is formed at a process pressure between 1 and 200 mtorr. 11. A method for forming an organic anti-reflection coating, comprising at least: providing a substrate; and depositing an anti-reflection coating on the substrate using a reactive gas, the reactive gas including at least a composite gas, wherein the composite gas The general chemical formula is CxHyXz, X is a halogen element, X is between 0 and 5, y II LI —lu ___I Good_ I! N I —Ding — 1 IIII Elephant (谛 Please read the precautions on the back before filling (This page) This paper uses the Chinese National Standard (CNS) A4 size (210X297 mm), printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 411503 A8 B8 C8 __D8 6. The scope of patent application is between 0 and 9, The z range is between 0 and 9. 12. The method according to item 11 of the scope of the patent application, which states that the composite gas is mixed with the carrier gas and injected into the reaction chamber. 13. The method according to item 12 of the scope of patent application, wherein the gas-carrying system is selected from one of the group consisting of helium and argon. 14. The method according to item 12 of the scope of the patent application, wherein the flow rate of the gas is between 0 and 100 seem. 15. The method according to item u of the scope of patent application, wherein the anti-reflection coating is formed in a chemical vapor deposition reaction chamber. The plasma source power of the chemical vapor deposition reaction chamber is between 100 and 1900. Watt. The bias power of the chemical vapor deposition reaction chamber is between 0 and 500 watts. 16. The method according to item 11 of the scope of patent application, wherein the anti-reflection coating is formed in the etching reaction chamber, The plasma source power of the etching reaction chamber is between 100 and 1900 watts, and the bias power of the etching reaction chamber is between 0 and 500 watts. 17. The method according to item 1! In the scope of patent application, wherein the element element is selected from the group consisting of a fluorine atom (F), a gas atom (C1), a bromine atom (Br), and an iodine atom. one. This paper is from the applicable ta® furniture standard (CNS) to the secret (2 like 297) I n I line * '(please read the precautions on the back and fill in this page first) 411503 8 8 8 8 ABCD VI. Application Scope of patent 18. The method as described in item 11 of the scope of patent application, wherein the composite gas system is selected from one of the group consisting of CHF3, CH3F, CH2F2, C2F6, C2HF5, C4FS and any combination of the foregoing gases. 19. The method according to item 18 of the scope of patent application, wherein the flow of CHF3 is between 0 and 100 sccm, the flow of CH3F is between 0 and 100 sccm, and the flow of CH2F2 is between 0 and Between 100 sccm, the flow of the C2F6 is between 0 and 100 seem, the flow of the C2HF5 is between 0 and 100 seem, and the flow of the C4FS is between 0 and 100 seem. 20. The method according to item 11 of the scope of patent application, wherein the anti-reflection coating is formed at a process pressure between 1 and 200 mtorr. --- 1 --.---- Installation ----; ---:-Order ------ line · * (Please read the notes on the back before filling in this f) Intellectual Property Bureau of the Ministry of Economic Affairs Printed by employee consumer cooperatives. 14 paper sizes, using China National Standard (CNS) A4 standard (210X297 mm)
TW088112558A 1999-07-23 1999-07-23 Method of forming bottom anti-reflective coating on substrate TW411503B (en)

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DE10156865A1 (en) * 2001-11-20 2003-05-28 Infineon Technologies Ag Process for forming a structure in a semiconductor substrate comprises transferring a photolithographic structure on a photoresist layer into an anti-reflective layer
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