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Priority to TW087102134ApriorityCriticalpatent/TW368725B/en
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Publication of TW368725BpublicationCriticalpatent/TW368725B/en
A kind of manufacturing method for synchronous forming alignment mark and shallow trench isolation structure which includes the following steps: (a) providing a substrate including a component area and an alignment area; (b) defining the substrate and forming a shallow trench in the component area and an aligned trench in the alignment area; (c) forming an insulation layer to cover the substrate and fill out the shallow trench and aligned trench; (d) defining a photoresistant layer covering the insulation layer above the shallow trench; (e) employing photoresistant as the mask to etch back the exposed insulation layer and form an aligned mark by etching to the bottom of aligned trench in the alignment area; and, (f) removing photoresistant and applying planarization on the residual insulation layer covering the top of shallow trench and complete the shallow trench isolation structure in the component area.
TW087102134A1998-02-161998-02-16Manufacturing method for synchronous forming alignment mark and shallow trench isolation structure
TW368725B
(en)
A method for isolating an active region of an MOS semiconductor device using a planarized refill layer which is not substantially overpolished and an MOS device fabricated thereby
Method for manufacturing shallow trench isolation structure without producing microscratches on surface of shallow trench isolation structure (revised edition)