TW362170B - Method for tuning an attenuating phase shift mask - Google Patents

Method for tuning an attenuating phase shift mask

Info

Publication number
TW362170B
TW362170B TW087117056A TW87117056A TW362170B TW 362170 B TW362170 B TW 362170B TW 087117056 A TW087117056 A TW 087117056A TW 87117056 A TW87117056 A TW 87117056A TW 362170 B TW362170 B TW 362170B
Authority
TW
Taiwan
Prior art keywords
phase shift
tuning
shift mask
phase
attenuating phase
Prior art date
Application number
TW087117056A
Other languages
Chinese (zh)
Inventor
William John Adair
David Shawn O'grady
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW362170B publication Critical patent/TW362170B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The present invention provides a method and an apparatus for tuning the phase shifting of a phase shift mask having an attenuating phase shifting material providing at least 160 degree of phase shift the method comprising the utilization of a phase measurement and etch operation which reduces the challenge of making an exacting 180 degree phase shifting mask. An attenuated phase shift mask structure is also disclosed in the present invention.
TW087117056A 1997-10-14 1998-10-14 Method for tuning an attenuating phase shift mask TW362170B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94991697A 1997-10-14 1997-10-14

Publications (1)

Publication Number Publication Date
TW362170B true TW362170B (en) 1999-06-21

Family

ID=57940782

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087117056A TW362170B (en) 1997-10-14 1998-10-14 Method for tuning an attenuating phase shift mask

Country Status (2)

Country Link
KR (1) KR100277006B1 (en)
TW (1) TW362170B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101140301B1 (en) * 2009-09-21 2012-05-02 오토코리아 주식회사 Processing apparatus

Also Published As

Publication number Publication date
KR100277006B1 (en) 2001-01-15
KR19990037084A (en) 1999-05-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees