TW309692B - Parallel plate electrode plasma reactor having an inductive antenna coupling power through a parallel plate electrode - Google Patents

Parallel plate electrode plasma reactor having an inductive antenna coupling power through a parallel plate electrode Download PDF

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TW309692B
TW309692B TW85114031A TW85114031A TW309692B TW 309692 B TW309692 B TW 309692B TW 85114031 A TW85114031 A TW 85114031A TW 85114031 A TW85114031 A TW 85114031A TW 309692 B TW309692 B TW 309692B
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reactor
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TW85114031A
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S Collins Kenneth
Rice Michael
Trow John
Buchberger Douglas
Askarinam Eric
Chiu-Wing Tsui Joshua
W Groechel Daid
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Applied Materials Inc
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Priority claimed from US08/597,577 external-priority patent/US6077384A/en
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  • Drying Of Semiconductors (AREA)

Abstract

A plasma reactor (10) for processing a workpiece such as a semiconductor wafer (14) having an axis of symmetry, includes a reactor chamber with a ceiling (20), a pedestal (12) for supporting the workpiece within the chamber under the ceiling, a processing gas supply inlet (32) into the chamber, an RF plasma power source (18) coupled to the pedestal, and a magnetic field source (40) near the ceiling providing a radially symmetrical magnetic field relative to the axis of symmetry within a portion of the chamber near the ceiling. The reactor chamber ceiling has an annular pocket (32, 34) extending upwardly therefrom. The magnetic field source imposes a magnetic field across the annular pocket. Preferably this is accomplished by providing plural magnetic poles (42) of one type (e.g., north poles) around the inner circumference of the annular pocket and plural magnetic poles (46) of the opposite type (e.g., south poles) around the outer circumference of the annular pocket.

Description

經濟部中央橾準局員工消费合作社印裝 309692 A7 ___ B7 _ 五、發明説明（1 ) 發明之背景 技術範圍 本發明有關於電漿反應器*此反醱器有平行板供内置 一要予處理之I：件於其間，此工件諸如一半導體晶片者， Μ及一感應線圈型天線耦合射頻功率通過平行板之一而進 入反應器之内部者。 背景技藝 感臞之耩合電漿反醮器用以處理撖電子半導體晶片者 ，諸如一型反豳器之吐霉於給Ogle之美國專利案第4,948, 458 中者，在平行板電容地耦合電漿反應器上面享有重要優點 。例如，可感釅地耦合電漿反醮器達到更高之電漿離子密 度（例如，在1011離子/立方公分之範圍）。此外，電漿 離子密度和電漿離子能量可Μ藉對工件或晶片醮用偏壓功 率而在感應之耩合電漿反應器中單獨地控制。相反地，電 容性耩合反應器典型地提供較低之離子密度（例如在僅101 離子/立方公分之範圍），並通常不能提供離子密度和離 子能量之單獨控制。例如，由使用於侵蝕二氧化硅中一種 感醮之耦合霣漿侵蝕反醮器所提供之最佳離子對中性密度 化率在小型侵拽幾何體處提供最佳性能（例如小於0.5微 米外形尺寸者），包括較佳侵蝕各向異性，侵独外形和侵 蝕灌擇率。柑反地，平行板電容性耩合霣漿反醮器由於一 較低之離子對中性密度比率，典型地在大約0.25撤米之範 圍之外形大小廉停止侵蝕，或者至少展示較低之侵蝕選擇 率和侵蝕輪鄆。 ^n 1. ί. I - · I 1 - - I \^&quot; nn n^i ^^^^1 V#. (請先鬩讀背面之注意事項再填寫本頁) 309692 A7 _ B7 五、發明説明（2) nut I n ......... · mu I ^ n^i 1^1 nn - J. 牙 、V5 (請先閱讀背面之.;i意事項再填莴本頁) 上文提及之吐露於美國專利茱第4,948,458號中之可 感應之供合霣漿反應器有一平面式線圈置於室頂板之上面 並面向要予處理之半導醱晶片，因而提供一最佳均勻射頻 感應磁場於晶片之表面上面。為了此一目的，此頂板，它 密封此反應器室俥使其能成為真空者*必須是相當地能自 線圈對射頬感應磁場可傳導者》並因此係一棰霣介質*諸 如石英者。在此應予說明者*即此一頂板可以Μ石英以外 之霣介其材料製成，諸如氧化鋁。不過，其他材料諸如氧 化鋁者，由於濺射之原故，較石英易於產生污染。 霣容性鍋合«漿反醮器之優酤係室容積可以藉缩小平 行板«極之間之空間而大大地減小，能有在工件上面 之較佳限界或集中此電漿，同時反醮器可以在比較高之室 壓力（例如，200兆托UTorr))來操作。相反地，感醱式耩 i 合18漿反應器由於射頻感«磁埸之較大集虜深度而須要較 經濟部中央捸隼局員工消費合作社印裝 大容積《並必須操作於較低室壓（例如，10兆托）以避免霄 漿因再組合及較高泵W速度而使霣漿離子耗損。在上文提 及之美國專利菜第4,948,458¾之感應式耩合反應器之商 用實施例中，較大室容稹之需要係遭遇到一相當大區域之 邊壁。缺少任何其他射頻之接地回行（由於一電介質窗口 Μ容許射頻感覼磁場自頂上線圈進入之須要），意指室邊 璺«該是導霣鼸並作用如主要接地或射頻回行平面。不過 ，此邊壁係一不良之接地平面，由於它有甚多不連鱅性* 諸如供晶片進/出用之開縫閥，氣鼸分配口或装置Μ及諸 如此類者。此一不連繙性讓不均勻霣滾分布發生*它杻曲 本纸張疋度適用中國國家樣準（CNS、'\4堤咯;.2!U;厂公f — — -6 - 309692 A 7 B7 _ 五、發明説明（3 ) 霣漿離子Μ晶片表面爲準之分布。结果之朝向邊壁滾動之 邊行電滾分布至Μ晶片表面為準之不均勻電漿離子分布中 〇 用Μ结合«容和感臁性耩合之一種方法係提供一種線 腯園著平行板霣漿反®器之邊壁捲撓，一如吐露於歐洲專 利文件公報第0 520 519 Α1(由Collins等人所持有者）號 中者。為此一目的，此圖筒形室邊壁必須是一非導電體之 諸如石英者，Μ便能讓邊線圈之射頻感應磁場進入室内。 此一型霣漿反醮器之主要問題是它極易陷入展示播越晶片 表面之不均勻性。例如，侵蝕率在晶片周邊很大而在晶片 中央則極小，由是而壓縮此處理窗口。事實上，此侵蝕處 理可能實際上於接近晶片中央處己停止而在晶片周邊刖繼 續。沿箸反應器室之邊壁感應線圈天線之配置，朝向室中 央之較短（例如，2公分〉之樂虜深度，Μ及侵蝕先驅氣體 自邊之引進入反應器室内，将限制大部分侵蝕_離子和自 由基產物至室邊壁之附近或醒箸晶片周*。”侵蝕劑離子 和自由基”一詞如引用於本說明窨者係言及執行此侵蝕反 應之各種不同之化學物種類，包括碘氟離子和自由基以及 垤基《離子和自由基。如果選擇之侵蝕方法係很理想時， 則不含氟離子和自由基之數量俤藉眾所熟知之技術而適當 地減至最少。由電漿源功率與處理先驅氣疆之相互作用所 產生之活力充沛之霣子和因而產生之侵独離子和自由基， 以及更進而產生後雑侵蝕程序中所引用之聚合物所必要之 分子或原子硪。靠近晶片中央之侵蝕處理係依賴於此類活 本氓張尺度適用中國國家樓萆：CNS ) AW(洛 ' ；：⑴，公蝽） .^ϋ i HI—— - I i \ 士 Maw ^ J 5¾ *T (請先閱讀背面之注意事項再填寫本頁) 經濟部中央橾準局員工消費合作杜印製 Α7 Β7 經濟部中央標準局負工消費合作社印製 五、發明説明（4 ) 力充沛之霣子自室邊壁之附近游走並於其藉與中性物或離 子之碰撞而沿著此路徑再结合之前到達晶片中央，因此， 此侵蝕方法係不均勻地橫越晶片表面。這些問題係以聚合 物在侵蝕程序中扮演之®色之事實而有較佳之瞭解。 引用於硪《&lt;CXPX&gt;或烴基氟化學之聚合物係被引用於 一典型之二氧化硅侵蝕方法中，例如，以增強侵蝕各向異 性或外形Μ及侵拽S擇性，一如Bariya等人在&quot;Journal of the Electrochemical Society&quot;第 137冊，第8號（ 1990年 八月）2575-2581頁之第一頁中所載”供電漿聚合物用之一 檯表面蓮動模式與對霣漿侵蝕之《用”文中所說明者。一 種侵蝕先驅氣匾諸如碳氰化合物像C2P8或垤基氰被引進入 反應器室内，藉與霣漿内活力充沛之電子作無彈性地碰撞 而分離成漫蝕劑離子和自由基以及硪。一如上文所說明者 *此一侵蝕劑離子和自由基包括碩氰或垤基氟離子及自由 基，例如* Μ及不含氰離子和自由基。此不含《離子和自 由基，例如，如果此侵蝕方法係要Μ某一物質為準，諸如 聚珪氧烷者，而其S擇性時，係通過注塑方法而適當地減 至最少。此碩和至少某些磷氟或烴基氟離子和自由基係9 成聚合物。亦呈現於霄漿中者係激發之中性物或未分離化 學物並由產物侵蝕。此形成之聚合物自由基和硪增強侵蝕 外形如下：Μ僅在侵蝕外形之邊壁上形成（在水平向表面 之形成係由自《漿之活力充沛之向下離子通量所防止）， 聚合物可阻檑俩向侵蝕、並由是而產生各向異性（狹窄而 深）之外形。此聚合物形成之離子和自由基亦增強氧化硅 (請先閲讀背面之注意事項再填寫本頁) '1Τ 衣紙滚尺度適用中1國家標皐i； CNS ) ,\4吃洛，.210、Μ公烽 -8 - 309692 Α7 Β7 經濟部中央標車局員工消f合作杜印製 五、發明説明（5) 侵独S揮性，因為聚合物通常在有利情況下並不形成於氧 化硅上但卻形成於硅或其他常質上*而這些物質係不要被 侵蝕但可能位於係被侵蝕之氧化硅之下j因此*當位於上 面之氧化硅層桊已完全被侵蝕以暴露位於下面之聚硅氧垸 層之立刻，霄漿内聚合物形成之離子和自由基接«此暴赛 之聚硅氧烷層立刻開始Μ形成一聚合物層，抑制進一步地 侵蝕。 在侵蝕程序中之此一聚合須要極细心之侵蝕劑和聚合 物之平衡，此侵蝕劑濃度典型地係在減液位準Μ避免睡當 聚合物形成之抑制。其结果*靠近晶片周邊所形成之侵拄 劑離子和自由基之有效比率係在到達晶片中央之前邸耗盡 ，在晶Η中央上面進一步地減烯侵蝕離子灞度。此將導致 在接近晶Η中央處一更低之侵蝕率或侵蝕停止。 有更多離子在晶片周邊之一個原因是感«線圈之位置 在侧壁者促使較熱離子產生之霣子在邊壁之附近内產生， 此類«子於到達中央之前於再结合中被冷卻及/或耗畫， 因此，很少侵蝕《I離子和自由基之產物發生於晶片中央上 面。況且*侵拽涮先驅氣讎之引進自邊侧以及霄漿源功率 之«合自邊«產生一有利於非均勻侵拽薄離子/自由基之 分布。甚多離子和自由基靠近邊（在晶片周邊上面）形成 者係藉侵蝕此石英邊鑒而消耗而未能用於侵蝕晶片中央， 同時靠近遢所產生之侵蝕剤離子/自由基形成之活力充沛 之電子係耗失於與其他化學物碰撞於其能到達晶片中央之 前，因此而減少了侵蝕劑離子之濃集於晶片中央。（*予 (請先閱讀背面之注意事項再填寫本頁) -» 木纸乐尺度適用中國國家標拿：CNS ) ,A4規各21广公喹 309692 A7 經濟部中央標準局員工消费合作社印製 B7五、發明説明（6 ) 說明者，石英邊壁之搜蝕大大地增加了反應器之操作成本 ，因為它消耗著一非常昂貴之項目-卽石英邊壁，那必須 按期地更換。）靠近晶片中央之浸蝕爾離子之相關缺少可 讓晶片中央處之聚合物之快速形成*逋麽多原故因此在某 些情況中聚合物形成淹沒了侵蝕程序而停止了它，特別是 外形大小是小於0.5微米時。此一侵蝕停止可能要就是發 生於較大侵蝕外形，較淺之镘蝕深度*抑或較短之侵蝕時 間。 前文之談論涤比較竇富之侵蝕朗離子和自由基靠近晶 片周邊，在S擇之《理狀況下·可如此地阻礙聚合，Μ致 於損害侵蝕選擇性，除了促使在晶Η周邊有更高之《蝕速 度外，可能地導致置於靠近晶片周邊下面一層之穿孔。一 項相關之問題是靠近室邊壁/晶片周邊之較熱轚子提供更 有活力之18漿離子於附近匾内，與由上文提及之石英邊壁 之侵蝕所釋出之氧供合，腐蝕靠近晶片周邊之光阻掩棋之 邊緣。此一腐拽導致小刻面化，其中由光阻掩棋所界定之 角係被侵蝕，使其發生爲不良雄形侵蝕之外。 自前文所述，至為明晰者，邸在避免穿孔和晶片邊緣 成小刻面以及避免侵蝕在晶片中央停止之間有一棰捨_方 法，即指定處理參數之一非常決窄留口，在其中一成功之 侵蝕處理可Μ播越整傾晶片表面而獲得。要避免晶Η周邊 之過份侵»，電漿中Μ其他微粒（例如，形成聚合物之離 子和自由基和硪）為準之侵蝕用離子和自由基之濃度可Μ 減少*此将管浸蝕停止於晶片中央處之危險。相反地，要 (請先閱讀背面之注意事項再填寫本頁) 訂 本纸張尺度適用中國國家橾準（CM、Α4現洛· ι ：：!0'&lt;_ 公f 1 10 經濟部中央樣隼局員工消費合作社印製 A7 _ B7_ 五、發明説明（7 ) 避免侵蝕在晶片中央停止，則霣漿中侵拄劑離子之灌度可 以增大，那又會管穿孔或小刻面靠近晶片周邊之危險。因 此，因以成功地侵蝕整艏晶Η之處理窗口係非常狹窄。 在平行板霣漿反應器中，霣漿中游離氟之濃度可以藉 淸除物，諸如硅者之引進入靠近或在反®器室之頂部處而 可控制。珪原子物理地被侵蝕（濺射），化學地被侵蝕， 或者自淸除物與氰離子和自由基結合之可反應離子之被浸 蝕*因而在霣漿中減少氰離子和自由基之濃度。«控制硅 原子係被自清除物之物理或化學浸蝕之速率，刖電漿中游 離氟離子和自由基之置可如上述地予Μ調節（例如，滅少 )，以符合上文提及之狹窄《理留口。此物理或化學搜蝕 率可Μ藉控制清除物之溫度以及/或藉控制離子在清除物 上之攻擊而予Μ控制。淸除物之表面可Μ要就是以射頻功 率抑制或Μ加熱來致動（Μ釋放硅原子進入電漿内）。« 保持淸除物之》度於聚合可發生之醞度之下，此聚合物累 積在淸除物表面上並阻檑硅原子之自其作任何開釋。藉昇 高淸除物之溫度高於凝结溫度，此表面卽不會有聚合物* 如此可讓硅原子之釋放入《漿内。進一步地增加此溫度邸 增加硅原子係自淸除表面釋放入霣漿内之速率。當Μ射頻 功率用Μ致動此淸除物時，淸除物之離子撞擊之速度係由 射頻«勢或«用於接近淸除物之頂部平行板霣棰之«ΙΚ所 影響。Μ此一方式滅少游離《污濃度有不僅降低侵蝕率之 彩響，而且亦加重聚合物之磺含量，因此而增加聚合物在 侵蝕程序上作防議以抗拒在晶片周邊穿孔之效用，但卻增 本纸浪尺度適用中國國家橾隼ί CNS ) Λ4現洛' 公f ) I - I i. I» I». * ^^1 ^^1 4 ^ - 1^1 - - i I .1 (靖先閱讀背面之;i意事項再填寫本f ) -11 - 經濟部中央標隼局員工消費合作枉印11 309692 A7 ____B7 五、發明説明（8 ) 加了侵蝕在晶片中央«停止之危險。相反地，增加游離氟 濃度不僅增大侵蝕速率，而且減少聚合物之碳含量，因此 而減少聚合在漫蝕程序上之效果*因此降低«蝕在晶片中 央停止之危險，但使抗拒晶片周邊穿孔之防護變弱。 此狹窄處理窗口係亦藉調節電漿内形成聚合物離子和 自由基覼度來配合。此係薙調整此一形成聚合物之自由基 和離子Μ聚合於室頂板或邊壁（或一清除物）上而係自電 漿耗失之速度而逹成*或者調節自頂板或邊壁（或清除物 )所濺射之聚合物沉積之速度而達成。在頂板之聚合率係 葙讕節頂板溫度高於或低於聚合溫度而影《。此一聚合物 沉積在頂板上者係被侵蝕Μ及被開揮入電漿内之速度係Μ 下列因數來影镶：醮用於頂板霄極之射頻功率，溫度，室 壓，«壓滾速，感«源功率以及其他參數。 因此 &gt; 為了要符合此決窄處理窗口，一般地霣漿内游 離氟和形成聚合物離子及自由基可Μ藉調節室頂板或邊壁 ，或者一淸除物（如果有時）之fi度來控W，M及/或藉 調節醮用於在上面/頂板之平行板電極之射頻功率而控制 〇 因此•可見者邸具有感懸線圈圍著其圖简形邊壁捲撓 之平行板霣漿反®器有提供其頂板霣極作爲整齒晶片表面 上面一均勻接地平面之優酤，但卻限制了霉漿離子產物在 室邊壁之附近，因此霣漿之鼴理係在晶片中央處較弱而晶 片周邊處較強。頂上平面》圈型電漿反«器有Μ晶片表面 為準之更均勻射頻慼«磁場之優點，因此，離子產物並不 表紙伕尺度遇刃中國國家橾箪：規洛：m t : n I» ml · —i m^i ^^—^1 tuff— i ^ ^ (請先閱讀背面之',;i意事項再填寫本頁) -12 - A7 B7 經濟部中夬標隼局員工消费合作社印製 五、發明説明（ 限制於晶Η周邊，但通受到缺乏晶片上面有任何均勻之接 地平面，因而使電漿離子電溁潦向邊壁而杻曲此霄漿。 本發明之目的係在组合有一頂上平面感醮線圈天線之 一感應式锅合霣漿反應器之優點其平行板電極電容式耩合 霣漿反懕器之優點於一單一反醮器内而不會承受上文所述 問題之缺點。特別是，本發明之目的係在提供一感醮之Λ 合平行板霣棰«漿反應器，它展示均勻之電漿《理播越此 整個晶片表面，Μ便能拓實電漿處理窗口，因此容許處理 參數上有較宽_之範圍，諸如室壓爲例。 本發明之目的係在提供一感應線腯天線，其物理佈署 及/或功率分配匾型係以整艏晶片表面為準而較均勻，因 此該電漿離子產物係不曹主要地集结於室邊壁之附近，而 在同時提供一均勻接地平面呈緊密地靠近整傾晶片表面， Μ便能避免電漿電滾潦動至室邊壁。本發明之進一步目的 係在Μ此一方式引用此一接地平面*它有效地限制«漿太 接近晶片之頂部表面，Μ便能將其舆室邊壁之相互作用減 至最小。 本發明之另一目的係在消除或減少室壁内之消耗材料 諸如石英或陶瓷者，以便能避免耗耋靠近室璺之霣漿離子 而經由此類材料之侵拽而消耗昂貴之反臁器组件。 本發明之另一目的係在《提供一均勻之侵蝕和聚合物 先轚氣饑分配Μ加強在此一反懸器中以晶片周邊為準之晶 片中央處之處理均勻性。明確而言，本發明之目的係在自 室之最佳徑向位置引進此一氯鼸，諸如自室中央及/或自 n. I 1 aik——^ I. ma^l Bn^iK— 十· ^、v-0 (請先閱讀背面之注意事項再填寫本瓦〇 13 A7 B7 五、發明説明（10 ) 室周邊，無論何處能横越晶片表面有最佳處理均勻性者。 例如，當侵蝕速率係在晶片中央處較低Μ及在晶片周邊較 高時》此氣醴係睡酋地自項板之中央引進而不從靠近頂板 周邊處引進。 本發明之附加目的係在藉增強（或減少，如果須要時 )Μ晶片周邊上面射頻感醮磁塲爲準之晶片中央上面之射 頻感腯磁場而在此一反*器内增強以晶）=!周邊為準之在晶 片中央處之處理均勻性。更明確言，本發明之一附加目的 係在提供晶片中央上面射頻感應磁場之強度之分開或單獨 控制以及晶片周邊上面射頻慼醮磁場之強度之單掲控制， 俥使横越此晶片表面之射頻感醮磁場之徑向分配係可調節 以優化橫越晶Η表面之電漿處理之均勻性。 經濟部中央標準局員工消費合作社印製 in flue —^—n fi^n (請先閱讀背面之注意事項再填寫本頁) 在一使用以在一半導鼸晶片上薄膜之遘擇侵蝕之一典 型霣漿«理室内*侵蝕和澱積程序之组合係在同一時間被 懸用。在表面上形成之聚合物係要就是足夠地冷卻（低於 聚合之醞度»值，或者離子撞擊其上係低於《能（此《離 子能足夠Μ在該表面彌補聚合物澱稹速度）。此匾度Η值 以及Μ離子能耽視表面之物質而定。澱播可以發生於晶Η 上以及處理室表面上。在晶片上以及在處理室表面上澱積 之控制係控制埋擇S蝕方法之鼷鍵。在室壁之材料係與在 晶片上實施之程度不相配合之情況中則反*器室壁之内部 表面上聚合物濺積係腸須要。此種情況之一範例係室壁是 鋁Μ及貢施之程序俤二氧化硅之電漿侵蝕。在室壁表面上 聚合物之澱稹»防止室壁之電漿離子«射而防止鋁之引進 本紙伕尺度逋:*1中國國家磉準（CNS ! Α4洗各210、厂公埯) -14 - 309692 A7 B7 五、發明説明（11 ) 入此程序内。 用Μ控制聚合物澱積之傳統式技術須要使用者在下列 兩禰灌擇方法中作挑灌： ⑴保持此處理室表面低於Μ溫度，或保持此離子能低 於«離子能，以便能促使聚合物濺積於表面上； ©保持處理室表面高於閾溫度，或保持此離子能高於 閲離子能，以便能防止聚合物澱積於表面上。 第⑴項選擇之問題係該聚合物之累積於表面上必須按 時Μ手動（濕）淸理*以霄漿（乾）清理而移除，抑或以 更換須被污染之部分。否則，聚合物之片落將發生而導致 室之污染。反«室之淸理須要反«器操作於整健清理程序 中被中斷，那即代表生產率之顧箸之耗損Μ及增加搡作反 應器之成本。與霣漿清理程序相期連之問題不僅包括生產 率之損失，而且包括室和污染物質内可耗失材料之損失。 第2項選擇之問題係因爲此表面悌被暴露而使室表面 之侵牲發生。典型地造些表面係要就要鋁抑或石英。對鋁 表面言，侵蝕產生污染副產物，它可破壞晶片霣漿處理之 整鼸性一如上文所提及者*對石英表面者，侵蝕可Μ离速 度發生，但該石英部分必須在一部分之可戡損失之損失生 產時間而作按期更捵。況且，某些過度至更冷表面--在室 之其他Ε域内諸如泵β環帶--必須提供。 因此，本發明之一附加目的係在消除定期地淸理反應 器室内部之霈求。本發明之另一目的係在防止室之«理匾 域中聚合物之聚集在室表面上。一相Μ之目的係在控制那 本纸張又度遑用中S國家標拿；CNS ’： \4趴洛：!0 &lt; ' (請先閲讀背面之注意事項再填寫本頁) 、\ia 經濟部中央樣準局員工消費合作社印袈 15 經濟部中夬標隼局員工消費合作社印裝 A7 _ B7 五、發明説明（l2 ) 些相同室表面之侵蝕速度。本發明之另一目的係在藉限制 此電漿至處理區而提供自此室之《理區之適當過度。亦為 本發明之另一目的係在收集室之處理區外面之區域中之任 何殘留之形成聚合物之化學物，諸如殘留於泵唧環帶内者 〇 本發明概述 本發明係以一電漿反應器用Μ處理一工件來列舉實施 例，包括一處理室之反應器園壁，一半導醱窗口 | 一檯座 在室内用Μ支承此工件於其被處理之時間内，一氣鱧進入 条統用Μ讓電漿先驅氣鼸進入此室内* Μ及一怒應式天線 鄰近半導體窗口之一邊與檯座相對，用以耩合霣力通過半 導鼸窗口而進入室之内部。此工件可Μ是一平面基體，此 半導龌窗口 （以及此感應天線）可Μ在室之裡面抑或室之 外面。如果是後者之情況則此半導體窗口可Μ是反應器圍 壁之頂板部分大致上平行於平面基體並置於其上面，以及 此感應天線可置於頂板部分之上面通過半導覼窗口以面對 。此平面基鼸。另一可供S擇方式為此半導鐮苗口可以是 反應器颺壁之邊壁部分，大致上垂直於基龌之周邊並琛繞 些基讎，此感釅天錄係鄰近此邊壁部分。較適當者，此感 醮天線置於頂板部分之上面包括一呈弧形伸展之伸長導霣 醱，大致上平行於平面基睡之平面，並可能是一平面抑或 一鼷頂形。此感應天線期近此邊壁部分可能是一導電線圈 圍着邊壁部分捲撓。 在一貢施例中*此半導臞窗口，除了遮蔽此感應天線 瓜紙張尺度適用中國围家蜾: os、Α4吠烙&gt; ? n 1 » -I - - - - - I 1 11— I - ί·— ......I ^^1. »- - - ! V—* ”^、-» (請先閱讀背面之注意事項再填寫本頁) - 16 - A 7 B7 五、發明説明（13 ) 外，亦可能是一霣極，在該愴況中一®接頭係連接至該處 。在此一愴況中此半導鱺窗口俤作爲一半導龌窗口電極而 言及之。 在一實施例中* 一偏壓射頻霣灝係聯結至基鱧，以及 半導黼窗口電極之電接頭係經連接Μ便能使此半導體窗口 電極成為對聯接至基體之褊壓射頬電源之一反霣極，藉其 係已接地，例如，由是而提供一均勻接地平面於工件之上 面0 另一貢施例包括一功率分裂器有一蠄出聯接至半導醱 留口電極以及另一蠄出聯接至基髓，Μ及一桷入用以自一 共有源接收電力。亦有另一實施例包括第一霄源聯接至半 導«窗口霣極以及一第二«源聯接至平面基龌。 經濟部中央橾準局員工消費合作杜印策 (請先閱讀背面之注意事項再填寫本頁) 此感臁天線可包括一内天線部分置於此平面基體之中 央之上面，以及一外天線部分置於平面基醱之周邊上面並 自内天線部分呈電上之分開。此一實施例可包括一功率分 裂器有一鑰出嫌接至半導醱窗口霄極Μ及另出聯接至 感«天線* Μ及一鑰入用Μ自一共有源接收«力。另一可 供S擇方式為一射頻功率分裂器可在内和外感*天線部分 之間分裂射頻功率 依據本發明之一特激，一功率分裂器有一«I出嫌接至 此平面基鼸Μ及另一_出嫌接至感應天線，Κ及一_入用 Μ自一共有源接收II力。在此一情況下，半導疆苗口 «極 之此霣接頭可以連接至射頻接地線。另一可供苗擇方式爲 一單播之射頻發鬣機亦可》接至半導讎窗口之霣接頭。 本泜張尺度適用中;SS家標隼；CNiS ) Λ4現洛 ! ； 0 公绛 17 經濟部中夬樣隼局員工消費合作.社印衮 A7 B7 五、發明説明（14 ) 具有頂上感«天線之頂板半導醱留口霄極Μ及具有邊 感醮天線元件之邊壁半導髏窗口電極可Μ组合於一單一之 反®器中。在此一情況下，一功率分裂器可Μ被引用、有 一《I出聯接至置頂板部分上面之感應天線以及另一 _出聯 接至鄰近邊壁部分之感應天線元件，Μ及一输入用以自一 共有源接收電力。 此半導體窗口和此工件可Μ分開地以射頻電驅動，同 時此工件可Μ是供半導醱留口轚極用之反電極*以及此半 導鱺窗口$極是供工件用之反霣極。此将可MU下列K置 來達成，邸引用第一頻率之第一射頓«源聯接至半導龌留 口霣搔，第二頬率之第二射頻電源聯接至此工件，一第一 接地旁通濾波器連接於射頻接地線和此芊導《窗口電極之 間，此第一接地旁通濾波器繞著第一頻率而截斷射頻電並 撓著第二頻率傳送射頻霣，以及第二接地旁通濾波器聯接 於射頻接地線和此工件之間，此第二接地旁通嫌波器繞著第 二頻率而截斷射頻霣並繞第一頻率傳送射頻«。此外，一 第一絕緣濾波器可Μ連接於第一射頻電源和半導醱窗口霣 極之間用以截斷射頬電接近此第二頻率，以及一第二絕緣 濾波器可以連接於第二射頻霄源和工件之間用以截斷射頻 電接近第一頻率。 依據另一特激* 一導«釀背部平面係置於半導體窗口 霄極之外表面上，此導16鱅背面係直接連接至霄接頭*此 導電霄極包括多艟孔在其内用以讓感應天線之感醮磁場通 過此導電醱背部平面。較恰當者*此導霣醱背部平面包括 本纸涑尺度通用中國國家標a : CNS ) Λ44咯.. (請先閱讀背面之注意事領再填寫本頁) 、ν» 18 經濟部中央榡準局員工消費合作社印复 309692 a? ______^__ 五、發明説明（15 ) 多傾導霣醴經向臂Μ孔來分開，以及此等孔有一恃激寬度 大約半導醱窗口霣極之厚度之範園。 依據另一持激* 一結構性之可支承基體可以結合至半 導髓窗口電極之外部表面。須要時此導電體背部平面可W 堪入此窗口電極和支承基覼之間，此導霣體背部平面係直 接地連接至電接頭。此结構性支承基體可以是一支承感應 天線之天線支架。此天線支架可以是一絕緣體或一導電驩 (不遇，自感《天線絕绪）。此導電天線支架可用作一導 霣鼸背部平而在半導饅窗口霣極之外表面上。在一實施例 中，此感醮天線包括一伸長導霣饅於一弧形路線中伸展， Μ及此導驩天線支架包括一伸長榷於一弧形路線中伸展並 緊握此伸長導電鼷，此樽悌在面對半導體窗口電極之導電 天線支架之一表面處張開。在另一實施例中，此導«天線 支架包括一凹部在面對半導醱窗口霄極之導電天線支架之 —表面内，以及此導霣天線包括多値伸長導電回轉放固定 於此凹部内。 依據一項實現，此導霣天線係一伸長導電釅非同心地 呈弧形地伸展。在一情況中，眈非同心地呈弧形地伸展之 伸長導電鼹包括一中央導霣元件和自此中央徑向朝外之多 傾螺旋式導電元件。在另一情況中，此非同心地呈弧形地 伸展之伸長導電鼸包括一國周形導霣元件以及自此_周形 導霣元件徑向朝内之多β«旋。 依據另一項貢現，此導電天線有一非平面路線，諸如 一三维蠼旋或雯同心三维蠼旋路線，或者一堆叠之螟旋路 本紙張尺度適用中国國家埭康（CAS ) Α4現格 I ：!()：&lt; ' (請先閱讀背面之注意事項再填寫本頁) 、1Τ 19 經濟部中央標準局員工消費合作社印製 A7 _B7五、發明説明（l6 ) 此氣匾輪入条統適當地包括一组氣鼸輪入口通遇平面 基鳢上面之半導醱留口霣極。這些氣鼸鴒入口可Μ是集中 在晶片中央之上面以及/或亦可分配於放置在晶片周邊之 上面。一中央氣鼸進给頂部可Μ密封於半導醱窗口®極之 外部表面*形成一氣饅岐管於中央氣鼸進给頂部和半導龌 窗口電極之間，此氣體岐管包圍此等氣龌輪人口。在一實 施例中，一半導醱檔板橫越此岐管伸展，至分隔此岐管成 爲一對子岐管，子岐管之一係鄰近此中央氣鼸進给頂部以 及另一子岐管係鄰近氣醱鑰入口，以及多艟氣體進给通道 通遇此半導體檔板自氣醱鑰入口伸出分岐。 為了要《聚合物澱積Μ消除使内室表面成爲被動之需 要，一全半導牖«理區係提供於此室内。此係藉提供一半 導鼸裙部，自半導留口或頂部伸展向下來逢成*藉Μ提供 —全半導牖園壁限制«漿於放在晶Η上面之«理匾内。環 換處理S之半導髏材料俤與霄漿程序，諸如二氧化硅浸蝕 者，可共容並因此可暴露於室内之«漿中而無處理污染之 危險。在一實施例中，此半導钃圍壁係經溫度控制以防止 聚合物澱積。在另一實施例中，澱稹在半導鼸臞壁上之聚 合物係藉應用一缠酋之霄至半導釀围壁Μ給予充分之 離子撞擊或《射Μ方便，Μ防止聚合物之累積在半導鼸围 壁而受到防護。在亦爲另一實施例中，累積在半導黼園壁 上之聚合物係《溫度控制和之濺射移除兩者之組 合《用而防止。»射減小半導艚圍壁必須保持Μ防止聚合 (請先閲讀背面之注意事項再填寫本頁) 訂 本纸浪尺度適用由國國家樣立,:CN'S ) Λ4規洛..2U〕' 20 A7 B7 五、發明説明（17 ) 物累稹之匾度。每一此等*施例在此技替中提供一革命性 之進展，而使痛要Μ定期淸理反懸器室内表面之原因終於 消除，由是而大大地增加反應器之生產率。 為了要使電漿不會自處理匾洩漏，電漿限制磁雄係圍 著處理區和泵唧環帶之間之開口裝設。在另一實施例中， 霣漿限制磁鐵係繞箸晶片開缝閥而裝設Μ限制霣漿於處理 區内。 另一可供S擇方式，或者是除電漿限制磁鐵Μ外*霄 漿洩漏亦可藉提供通道（例如，用Μ譎晶片進和出者）， 此通道係狹窄或有一較离之寬离比者。另一可供S擇方式 ，或除此以外者，此一通道亦可婉蜓而進並Μ重叠播板形 成。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 爲了要處理聚合物先驅物質之自室之處理匾排洩（例 如，進入室之泵啷環帶内），處理匾之外面之各表面（例 如，泵》環帶内）係保持在聚合物鑀结溫度Μ下之#度， 以促使遊走之聚合物先驅物質之凝结及澱稹其上。此類表 面亦可呈可移除冷«塾之形態。含此類表面之區域（例如 ，泵_環帶）俤自晶Η上面之電漿*理區絕緣，俾使在此 類表面上沒有電《壓，霣漿加熱，較大醞度變化或離子撞 擊一如可能會造成»積之聚合物先驅物霣自其上落片之 情形。否則，此一落片慵形會再引進聚合物物質四入霣漿 内*並會污染此晶片。 爲了要對處理晶片邊续和晶片中央之間之非均勻性（ 例如•不均勻之浸蝕逢度），此半導鼸窗口可以畫分成爲 衣紙張尺度適用中國國家標丰 ( CNS ) ,\4W吞、29?公埯 21 309692 A7 B7 五、發明説明（18 ) 功率分開之内和外（邊和中央，或者是邊壁和頂板）元件 ，而霣漿源射頻功率可以以不同比例對其應用，俥能横越 晶片作最均勻之處理。射頻功率亦可在元件之間分裂或分 開地«用。此外，一頂上射頻感應線圈亦可劃分成為電漿 源電力可以以不囘比例應用之功率分開之祺數線圈。除了 頂上射頻感應線圈外* 一邊感應線圈亦可圍繞著半導髓園 壁之裙部分捲撓，並自頂上線圈分開單揮地供霣，此半導 鼸園壁作用如一窗口 *供自頂上線圈Μ及攔線圈兩者以及 射頻功率可能對其暱用之一鼋極作感應式之《合。 處理均匀性係以提供獨立之邊续和中央氣鼸進给而係 在全半導鼸處理區之另一櫬點上加強，電漿先驅氣體可能 Μ不同速率Μ及/或Μ不同之氣髓混合物通遇該等播立進 给線路而進给，這些差異係經灌擇Μ提供最大之晶片中央 至邊鐮之處理均勻性。此邊緣氣鱷進给影瓣晶片邊缘上面 之電漿合成而中央氣黼進给彩《晶片中央上面之«漿合成 。此邊緣氣鼸進给包括自面向晶片中央之邊壁之氣鼸入口 ，或自向下面朝晶Η邊緣之氣龌入口 *或靠近向上面朝晶 片邊缂之晶片托架之氣鼸入口。此中央氣鼸進给可能是在 晶Η中央上面單一之氣《入口，或晶片中央上面分配之多 備氣龌入口，或一淋浴水龍頭似之配置。 依據本發明之另一覼酤，沒有電《Κ係醮用於半導醱 画壁，因此，吾人不必須要在此一情況下使壁Μ半導鼸物 質裂成。例如，此靨垩可以此類霣介質如*化硅者形成。 在任何情況下，它必須Μ良好之導熱物質形成，侔使溫度 木纸伕尺度通用令國國家梂準（CV；A4規格（；!丨ΰχ297公釐） m^— m 11^1 tn n. —fll ml — 1^^1- II 一 .J (請先閱讀背面之注意事項再填ft·尽頁) 經濟部中央標隼局員工消費合作社印製 22 經濟部中央樣隼局員工消費合作社印製 A7 B7 五、發明説明（19 ) 可以聚合物凝结溫度為準而作精密之控制。 沿蓍晶片托架之國周所提供之_環亦係ffi度控制以防 止聚合物之累積其上。此軸環可以用半導蠖物質形成。另 一可供S擇方式為此_環可Μ是一電介質，諸如«化硅或 石英。 附圓之簡要說明 第1圔說明本發明電漿反豳器之第一實施例，有一平 面線圈天線置於一平面硅頂板之上面者。 第2匾係一曲線 *說明自一發送射頻線圈至一接收 射頬線ffl之正常化前向霣壓傳輪係數*而以第1画之一平 面硅窗口在發送和接收射頻線圈之間。 第3圏係一曲線圈，說明自一發送射頻線圈至一接收 射頻線圈之正常化前向霄壓傅桷係數，而Μ硅窗口之圓筒 形部分在發送和接收射頻線圈之間。 第4_說明在硅頂板和晶片托架之間引用霣力分裂之 本發明之一實施例。 第5圏說明引用分開之射頻霣源Μ驅動晶片基座之本 發明之一實施例，即頂上慼應線圈和硅頂板。 第6圔說明本發明之一實施例，其中頂上感應天線係 被分成爲單播供以動力之同心外和内窗口。 第7圈說明引用園鐃一Η筒形硅邊壁捲撓之邊感釅天 線之一實施例。 第8麵說明一相當於第7_之一實施例，其中自一單 一射頻電源之電力係在硅邊壁和晶片基座之間分裂。 ----^--------- (請先閱讀背面之注意事項再填窝本頁) 表紙張又度適用中國國家標隼（CNS ) Λ4«格〈Μ7公釐 309692 A7 B7 經濟部中央樣隼局員工消費合作杜印裂 五、發明説明（2〇 ) 第9圔說明引用分開之射頻發電機驅動硅邊壁*晶片 基座和感醮邊天線並列舉其實施例。 第lOffl說明组合硅頂板和頂上感應天線與硅邊壁和匾 撓其捲撓之感匾邊線圈並列舉其貢施例。 第11_說明引用電力分裂於硅邊壁和晶片基座之間之 相酋於第10匾者之實施例。 第12圈說明一實施例，其中珪頂板，桂邊壁，頂上感 *天線和邊感醮天線均係分開地Μ射頻霣力驅動。 第13Α圈說明引用一圃頂形硅頂板之相當於第1圔者 之貢施例。 第13Β_說明引用一圜頂形硅頂板之相當於第4函者 之實施例。 第13C画說明引用一圔頂形硅頂板之相當於第5圖者 之實施例。 第1 3D圈說明引用一國頂形硅頂板之相當於第6_者 之實施例。 第14·說明一實施例，有一鼷頂形硅頂板以及置於上 面之怒應天線有一圖頂形部分在頂板上面*並饉繙地進入 園著此園筒形邊壁捲撓之一圓筒形部分内。 第15_說明枏當於第14圖之實施例，但其中此感應天 線之圖頂形和_简形部分係柑互絕»並分開地以射頻電力 驅動。 第16麵說明一相當於第6鼸之寶施例，其中自一只有 射頻發霣櫬之電力偽在内和外感_天線之間分裂。 (請先K讀背面之注意事項再填寫本頁 Γ ，-° Τ 本紙張又度適用中國圉家嘌龙（CNS ' :\4叱格 -24 A7 309692 B7 五、發明説明（21 ) 第17A國說明一相當於第15圚之實施例，其中自一只 有射頻發霣機之霣力係在圈頂形和圖筒形感應天線部分之 間分裂。 第17B圈說明一有分開之内和外鼷頂形感應天線之實 施例，在此兩天線之間自只有射頻發«機之霣力係分裂。 第18園說明一相當於第10·之實施例，其中自只有射 頻發電機之霣力係在頂上感應天線和邊感*天線之間分裂 0 第19顯說明一相當於第1圈之實施例，其中自只有射 頻發電機之霣力係在頂上慼應天線和硅頂板之間分裂。 第20_說明一相當於第1圖之實施例，其中自只有射 頻發霣機之電力係在頂上感應天線和晶片基座之間分裂。 第21圖說明一相當於有一圈頂形頂板之第13A圔之實 施例，其中自-只有射頻發電機之霣力像在頂上感臞天線 和頂形硅頂板之間分裂。 第22·說明一柑«於有一鼷頂形頂板之第13A圏之實 施例，其中自一只有射頻發霣機之霣力係在頂上想®天線 和晶Η基座之間分裂。 第23_說明一實施例，其中此晶片基座和硅頂板係分 開地Μ射頻霣力藝動，並各充作為相互之間之反電極。309692 A7 ___ B7 _ Printed by the Employees ’Consumer Cooperative of the Central Department of Economic Affairs of the Ministry of Economic Affairs 5. Description of the invention (1) Background of the invention Technical scope of the present invention is related to the plasma reactor * This anti-stage reactor has parallel plates for internal treatment. Part I: In the middle, the workpiece such as a semiconductor chip, M and an induction coil antenna coupled RF power through one of the parallel plates into the interior of the reactor. 2. Background Art A sophisticated plasma reactor is used to process electronic semiconductor chips. For example, a type of anti-reflector is used in the US Patent No. 4,948,458 to Ogle, which capacitively couples electricity on parallel plates. The pulp reactor enjoys important advantages. For example, a plasma reactor can be coupled inductively to achieve a higher plasma ion density (for example, in the range of 1011 ions / cubic centimeter). In addition, the plasma ion density and plasma ion energy can be individually controlled in the induction-integrated plasma reactor by applying bias power to the workpiece or wafer. Conversely, capacitively coupled reactors typically provide lower ion densities (for example in the range of only 101 ions / cm3), and usually do not provide separate control of ion density and ion energy. For example, the optimal ion-pair neutral densification rate provided by a coupled coupling slurry erosion reactor used in eroding silica provides the best performance at small drag geometries (eg, less than 0.5 micron size ), Including better erosion anisotropy, invasive appearance and erosion irrigation selectivity. Orange, anti-ground, parallel-plate capacitively coupled slurry counters due to a low ion-to-neutral density ratio, typically outside the range of about 0.25 meters to stop erosion, or at least show lower erosion Selectivity and erosion rounds. ^ n 1. ί. I-· I 1--I \ ^ &quot; nn n ^ i ^^^^ 1 V #. (Please read the precautions on the back before filling this page) 309692 A7 _ B7 5. Description of the invention (2) nut I n ......... · mu I ^ n ^ i 1 ^ 1 nn-J. Teeth, V5 (please read the back side first. ) The inductive feedable slurry reactor disclosed in US Patent No. 4,948,458 mentioned above has a planar coil placed on the top of the chamber and faces the semiconducting wafer to be processed, thus providing a Good uniform RF induced magnetic field on the surface of the wafer. For this purpose, the top plate, which seals the reactor chamber so that it can become a vacuum * must be quite capable of inducing the magnetic field to be transduced from the coil to the firearm, and therefore be a destructive medium * such as quartz. It should be noted here that the top plate can be made of materials other than quartz, such as alumina. However, other materials such as aluminum oxide are more prone to contamination than quartz due to sputtering. The volume of the chamber of the high-capacity pan-coupling can be greatly reduced by reducing the space between the parallel plates and the poles. It can have a better limit on the workpiece or concentrate the plasma, while inverting The device can be operated at a relatively high chamber pressure (for example, 200 Mtorr). On the contrary, due to the large collection depth of the radio frequency induction «magnetic field, the sensational type Si-i 18 pulp reactor needs to be printed with a larger volume than that of the Central Consumer Falcon Bureau of the Ministry of Economic Affairs and must be operated at a lower room pressure (For example, 10 megatorr) to avoid the loss of the slurry ions due to recombination and higher pump W speed. In the commercial embodiment of the induction-type reactor in U.S. Patent No. 4,948,458¾ mentioned above, the need for a larger chamber capacity encountered a side wall of a relatively large area. The lack of any other RF ground return (due to the need for a dielectric window Μ to allow the RF inductive magnetic field to enter from the top coil), meaning that the room edge «should be a guide and act as a primary ground or RF return plane. However, this side wall is a poor ground plane, due to its many non-connectivity * such as slit valves for wafer entry / exit, gas port or device M and so on. This non-contiguous property makes the uneven rolling distribution occur. * It can be applied to the Chinese national standard (CNS, '\ 4 embankment; .2! U; Changgong f — — -6-309692 A 7 B7 _ V. Description of the invention (3) The distribution of the plasma ions on the surface of the MW chip. The result is that the electric rollers that roll toward the side wall are distributed to the uneven plasma ions distribution on the surface of the MW chip. ΜCombines a method of compliant and sensitive integration is to provide a line with a parallel plate curling the edge wall of the parallel reflector, as disclosed in European Patent Document Gazette 0 520 519 Α1 (by Collins et al. The person holding the number). For this purpose, the side wall of the cylindrical chamber of this figure must be a non-conductive body such as quartz, so that the RF induced magnetic field of the side coil can enter the room. This type of 霣The main problem of the slurry reactor is that it is very easy to fall into the unevenness of the surface of the wafer. For example, the erosion rate is large in the periphery of the wafer and very small in the center of the wafer, so the processing window is compressed. In fact, this The erosion process may actually have stopped near the center of the wafer and swam around the wafer Continued. The configuration of the induction coil antenna along the side wall of the choppy reactor chamber is toward the center of the chamber with a shorter (for example, 2 cm) deeper depth. M and erosion pioneer gas are introduced into the reactor chamber from the side, which will limit the Partial erosion _ products of ions and free radicals are near the side wall of the chamber or around the wafer *. The term "erosive agent ions and free radicals" as quoted in this description and the various chemicals that perform this erosion reaction Species, including iodine, fluoride ions and free radicals, and base ions, ions and free radicals. If the chosen erosion method is ideal, the number of fluoride ions and free radicals is appropriately reduced to 5% by well-known techniques At least. It is necessary for the energetic entrapped ions produced by the interaction between the power of the plasma source and the processing pioneer Qijiang, and the resulting invading ions and free radicals, as well as necessary to produce the polymers cited in the post-erosion process Molecule or atom. The erosion treatment near the center of the wafer is dependent on this type of living scale. The scale is applicable to the Chinese National House: CNS) AW (Luo ';: (1, public bug). ^ Ϋ i HI —-I i \ Shi Maw ^ J 5¾ * T (Please read the notes on the back before filling in this page) Printed by the consumer cooperation of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs Α7 Β7 Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (4) The energetic daggers move from near the side wall of the chamber and reach the center of the wafer before they recombine along this path by collision with neutrals or ions. Therefore, this erosion method is not Evenly across the surface of the wafer. These problems are better understood by the fact that the polymer plays a role in the erosion process. &lt; CXPX &gt; or hydrofluorocarbon-based polymers are cited in a typical silica erosion method, for example, to enhance erosion anisotropy or profile M and drag S selectivity, as in Bariya et al. ; Journal of the Electrochemical Society &quot; Vol. 137, No. 8 (August 1990), pages 1575-2581, page 1, "The surface lotus model for the power-supplying polymer and its effect on the erosion of the encyclopedia" Explained in the article "Use". An erosion pioneer gas plaque such as cyanocarbons such as C2P8 or cyanocyanine is introduced into the reactor chamber, and is separated into diffuser ions, free radicals, and ions by inelastic collision with energetic electrons in the maize. As explained above * This corrosive agent ion and free radicals include cyanide or halogenated fluoride ions and free radicals, such as * M and no cyanide ions and free radicals. This does not contain ions and free radicals. For example, if this etching method requires a certain substance, such as polyoxane, and its S selectivity is appropriately minimized by injection molding. This masterbatch and at least some of the phosphorus fluoride or hydrocarbyl fluoride ion and free radical system 9 into a polymer. It is also present in the middle of the mortar that excites neutral or unseparated chemicals and is eroded by the product. The formation of polymer radicals and the enhanced erosion profile of this formation is as follows: Μ is only formed on the side wall of the erosion profile (the formation of the horizontal surface is prevented by the energetic downward ion flux from the slurry), polymerization Objects can resist the two directions of erosion, and thus produce an anisotropy (narrow and deep) shape. The ions and free radicals formed by this polymer also enhance silicon oxide (please read the precautions on the back before filling in this page) '1Τ clothes paper roll scale is applicable to China 1 national standard; CNS), \ 4 吃 洛, .210 、 M Gongfeng-8-309692 Α7 Β7 Employees of the Central Standardization Bureau of the Ministry of Economic Affairs cooperated with D. Printed five. Description of the invention (5) Invasion of independence and volatility, because the polymer is usually not formed in silicon oxide under favorable circumstances But it is formed on silicon or other normal materials * and these materials are not to be eroded but may be under the eroded silicon oxide j so * when the silicon oxide layer on the top has been completely eroded to expose the underlying Immediately after the polysiloxane layer, the ions and free radicals formed by the polymer in the slurry are connected. The polysiloxane layer of this storm begins to form a polymer layer to inhibit further erosion. This polymerization in the erosion process requires a very careful balance of the erosion agent and the polymer. The concentration of the erosion agent is typically at the reduced liquid level to avoid the inhibition of polymer formation during sleep. As a result, the effective ratio of the aggressive ion and free radical formed near the periphery of the wafer is depleted before reaching the center of the wafer, further reducing the degree of ene erosion ions above the center of the crystal H. This will result in a lower erosion rate or erosion stop near the center of the crystal H. One reason for more ions around the wafer is that the sense «the position of the coil on the side wall promotes the generation of hotter ions in the vicinity of the side wall. Such« ions are cooled in the recombination before reaching the center And / or consumption, therefore, the product of ions and free radicals rarely occurs on the center of the wafer. In addition, the introduction of the pioneering dragging gas tank from the side and the power of the power source from the slurry source produces a distribution of thin ions / free radicals that is conducive to non-uniform drag. Many ions and free radicals are formed near the edge (above the periphery of the wafer). They are consumed by eroding the quartz edge and cannot be used to erode the center of the wafer. The electrons are lost to collide with other chemicals before they can reach the center of the wafer, thus reducing the concentration of etchant ions at the center of the wafer. (* Yu (please read the precautions on the back and fill in this page)-»Wood paper music scale is applicable to the Chinese national standard: CNS), A4 regulations, 21 Guanggong Qu 309692 A7 Printed by the Employees Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs B7 Fifth, the description of the invention (6) Explainer, the search of the quartz wall greatly increases the operating cost of the reactor, because it consumes a very expensive item-the quartz wall, which must be replaced regularly. ) The lack of corrosive ions near the center of the wafer allows the rapid formation of the polymer at the center of the wafer. This is why there are many reasons why the polymer formation has overwhelmed the erosion process and stopped it, especially the size is When less than 0.5 microns. This erosion stop may be due to a larger erosion profile, a shallower trowel depth * or a shorter erosion time. The previous article talked about the erosion of ions and free radicals of Dou Fu near the periphery of the wafer. In the "Situation of S", polymerization can be hindered in this way. M causes damage to the selectivity of erosion, in addition to promoting higher In addition to the etch rate, it may result in a perforation placed in a layer below the periphery of the wafer. A related issue is that the hotter lumps near the side wall of the chamber / the periphery of the wafer provide more viable 18 plasma ions in the nearby plaque, which is combined with the oxygen released by the erosion of the quartz side wall mentioned above , Etching the edge of the photoresist mask near the periphery of the wafer. This decay leads to faceting, in which the corners defined by the photoresist mask are eroded, causing it to be outside of bad male erosion. As mentioned above, for clarity, Di has a cut-off method between avoiding perforations and wafer facets and avoiding erosion in the center of the wafer. That is, one of the specified processing parameters is very narrow and remains in it. A successful erosion treatment can be obtained by tilting the wafer surface. To avoid excessive intrusion around the periphery of the crystal H, the other particles in the plasma (for example, ions and radicals that form the polymer) and erosion are subject to erosion. The concentration of ions and free radicals can be reduced. This will erode the tube The danger of stopping at the center of the wafer. On the contrary, it is necessary (please read the precautions on the back and then fill out this page). The size of the paper is applicable to the Chinese National Standard (CM, Α4now Luo · ι ::! 0 ' &lt; _ Gong f 1 10 A7 _ B7_ printed by the Consumer Cooperative of the Central Sample Falcon Bureau of the Ministry of Economic Affairs 5. Description of the invention (7) To avoid the erosion stopped at the center of the wafer, the irrigation of the entrapped ion in the slurry can be increased, In turn, the danger of perforation or small facets is close to the periphery of the wafer. Therefore, the processing window for successfully eroding the bow crystal H is very narrow. In the parallel-plate slurry reactor, the concentration of free fluorine in the slurry can be controlled by removing debris, such as silicon, into or near the top of the reactor chamber. Silicon atoms are physically eroded (sputtered), chemically eroded, or eroded by reactive ions that combine with cyanide ions and free radicals from the depleted substance * thus reducing the concentration of cyanide ions and free radicals in the maize slurry. «Control the rate at which silicon atoms are physically or chemically eroded by self-removing substances. The placement of free fluoride ions and free radicals in the plasma can be adjusted as described above (for example, extinction) to comply with the above mentioned Narrow "Leave a mouth. This physical or chemical search rate can be controlled by controlling the temperature of the scavenger and / or by controlling the attack of ions on the scavenger. The surface of the repellent may be activated by RF power suppression or M heating (M releases silicon atoms into the plasma). «Keep the exudates '' below the incubation rate at which polymerization can occur. This polymer accumulates on the surface of the exudates and prevents any release of silicon atoms from it. By raising the temperature of the high-removal material above the condensation temperature, there will be no polymer on this surface * so that silicon atoms can be released into the slurry. Increasing the temperature further increases the rate at which silicon atoms are released from the decontamination surface into the maze. When the RF power is actuated by the RF power with M, the velocity of the ion impact of the scrap is influenced by the radio frequency «potential« or «IK used to approach the top parallel plate of the scrap. Μ This method eliminates the free "contamination concentration not only reduces the color noise of the erosion rate, but also increases the sulfon content of the polymer, therefore increasing the polymer's erosion process to prevent the effectiveness of perforation around the wafer, but However, the paper wave scale is applicable to the Chinese National Falcon CNS) Λ4 Xianluo 'Gong f) I-I i. I »I». * ^^ 1 ^^ 1 4 ^-1 ^ 1--i I .1 (Jing first read the back; i will fill in this matter f) -11-Employee consumer cooperation of the Central Standard Falcon Bureau of the Ministry of Economic Affairs 11 309692 A7 ____B7 V. Description of the invention (8) Added the risk of erosion in the center of the chip «stop . Conversely, increasing the free fluorine concentration not only increases the erosion rate, but also reduces the carbon content of the polymer, thus reducing the effect of polymerization on the erosion process * and thus reducing the risk of «erosion stopping at the center of the wafer, but making it resistant to perforation around the wafer The protection becomes weak. This narrow processing window is also coordinated by adjusting the polymer ion and free radical formation in the plasma. This is to adjust the polymerization of free radicals and ions that form a polymer on the ceiling or side wall of the chamber (or a scavenger) to the speed of plasma loss * or to adjust from the top plate or side wall ( Or scavengers) at the rate at which the sputtered polymer is deposited. The polymerization rate on the top plate is that the temperature of the top plate of the joint is higher or lower than the polymerization temperature. The speed at which this polymer is deposited on the top plate is eroded M and swayed into the plasma is set by the following factors: RF power, temperature, chamber pressure, «pressure roll speed, for the top pole of the top plate Sense «source power and other parameters. Therefore &gt; In order to comply with this narrow processing window, in general, free fluorine in the slurry and the formation of polymer ions and free radicals can be adjusted by adjusting the top or side walls of the chamber, or the fi To control W, M and / or by adjusting the radio frequency power of the parallel plate electrode on the top / top plate. Therefore, the visible plate has a parallel plate with a coil suspended around its schematic side wall. The pulp reverser has the advantage of providing its top plate electrode as a uniform ground plane on the surface of the whole tooth wafer, but it limits the product of mold plasma ions near the side wall of the chamber, so the principle of the pulp slurry is at the center of the wafer Weak and strong around the wafer. The "top plane" ring-shaped plasma reactor has the advantage of a more uniform radio frequency magnetic field based on the surface of the M chip. Therefore, the ion product does not appear to meet the scale of the paper. The Chinese national standard: Guluo: mt: n I » ml · —im ^ i ^^ — ^ 1 tuff— i ^ ^ (please read the back of ',; i will fill in this page before you notice) -12-A7 B7 Printed by the Employee Consumer Cooperative of Zhongshou Standard Falcon Bureau, Ministry of Economic Affairs 5. Description of the invention (Limited to the periphery of the crystal H, but due to the lack of any uniform ground plane on the wafer, so that the plasma ions rush to the side wall and bend the plasma. The purpose of the present invention is to combine a The advantages of the inductive pot-joined slurry reactor, one of the top planar sense coil antennas, The advantages of its parallel plate electrode capacitive type slurry reactor are in a single reflector and will not withstand the above-mentioned problems. Disadvantages. In particular, the purpose of the present invention is to provide a sense of Λ combined parallel plate 霣 晰 «plasma reactor, which shows a uniform plasma" management across the entire wafer surface, M can be expanded plasma processing Window, thus allowing a wider range of processing parameters, such as The purpose of the present invention is to provide an induction line antenna, whose physical deployment and / or power distribution plaque is more uniform based on the surface of the forehead wafer, so the plasma ion product is not the main The ground is concentrated near the side wall of the chamber, while providing a uniform ground plane close to the surface of the tilting wafer, M can prevent the plasma from rolling to the side wall of the chamber. A further object of the present invention is One way to refer to this ground plane * It effectively limits the «paste too close to the top surface of the wafer, and M can minimize the interaction between its side walls of the chamber. Another object of the present invention is to eliminate or reduce the wall of the chamber Consumable materials such as quartz or ceramics in order to avoid the consumption of expensive plasma ions close to the chamber and the consumption of expensive inverter components through the drag of such materials. Another object of the present invention is to provide a Uniform erosion and polymer distribution to enhance the uniformity of processing at the center of the wafer in this anti-suspension based on the periphery of the wafer. Specifically, the purpose of the present invention is to optimize the radial direction from the chamber Bit Introduce this monochlorine, such as from the center of the room and / or from n. I 1 aik —— ^ I. ma ^ l Bn ^ iK— ten · ^, v-0 (please read the precautions on the back before filling in this tile 〇13 A7 B7 V. Description of the invention (10) The periphery of the chamber, wherever there is the best processing uniformity across the wafer surface. For example, when the erosion rate is lower at the center of the wafer and higher at the periphery of the wafer. This air-conditioning system is introduced from the center of the top board instead of near the periphery of the top board. The additional purpose of the present invention is to enhance (or reduce, if necessary) the RF-sensitive magnetic field on the periphery of the M chip. The radio frequency induced magnetic field above the center of the wafer is enhanced in this inverter by the crystal) =! The peripheral is subject to the uniformity of processing at the center of the wafer. More specifically, an additional object of the present invention is to provide separation or individual control of the strength of the RF induced magnetic field on the center of the chip and single control of the strength of the RF magnetic field on the periphery of the chip, so as to make the RF sense across the surface The radial distribution of the magnetic field can be adjusted to optimize the uniformity of the plasma treatment across the surface of the crystal H. Printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs in flue — ^ — n fi ^ n (please read the precautions on the back before filling out this page) One of the typical erosion of the thin film on the half-conductor wafer in one use The combination of erosion and deposition procedures in the "maize room" was suspended at the same time. The polymer formed on the surface must be sufficiently cooled (below the value of the polymerization incubation », or the ion impact on it is lower than the energy (the ion can be sufficient to compensate for the speed of polymer precipitation on the surface) The H value and M ion can depend on the surface material. The deposition can occur on the crystal H and on the surface of the processing chamber. The control of the deposition on the wafer and on the surface of the processing chamber is to control the selection S The key of the etching method. In the case where the material of the chamber wall is not compatible with the degree of implementation on the wafer, the polymer splash on the internal surface of the chamber wall is required. An example of such a case is The walls of the chamber are eroded by the plasma of silicon dioxide and aluminum. The deposition of polymer on the surface of the walls of the walls »Prevent the plasma ions from the walls of the walls» Prevent the introduction of aluminum from the walls and prevent the introduction of aluminum 1 China National Standard (CNS! Α4 wash each 210, factory public) -14-309692 A7 B7 V. Description of the invention (11) into this program. The traditional technology of using Μ to control polymer deposition requires the user to Choose the following two methods for irrigation: ⑴Keep this treatment The surface temperature is lower than Μ, or keep this ion energy lower than «ion energy, so as to promote the polymer splash on the surface; © keep the surface of the processing chamber above the threshold temperature, or keep this ion energy higher than the reading ion energy, so It can prevent the polymer from depositing on the surface. The problem with the selection of item (1) is that the accumulation of the polymer on the surface must be removed by manual (wet) cleaning on time * with a slurry (dry) cleaning or replacement The part that must be contaminated. Otherwise, the polymer flakes will occur and cause the contamination of the chamber. The operation of the «room chamber needs to be interrupted during the sanitary cleaning process, which represents the loss of productivity. Μ and increase the cost of working as a reactor. The problems associated with the cleaning process of the maize slurry include not only the loss of productivity, but also the loss of consumable materials in the chamber and contaminants. The problem of choice 2 is because of this surface It is exposed to cause the invasion of the surface of the chamber. Typically, the surface is made of aluminum or quartz. For the aluminum surface, erosion produces by-products of pollution, which can destroy the integrity of the wafer processing. Mentioned in the article * For quartz surfaces, erosion can occur at a rate of detachment, but the quartz part must be made more regular as part of the loss of production time can be lost. Moreover, some of the transitions to cooler surfaces- In other Ε domains of the chamber, such as the pump β annulus—must be provided. Therefore, one of the additional objectives of the present invention is to eliminate the need to periodically treat the interior of the reactor chamber. Another objective of the present invention is to prevent the chamber «The polymer in the plaque field gathers on the surface of the chamber. The purpose of one phase M is to control the paper and use it in the S national standard; CNS ': \ 4Paluo:! 0 &lt; '(Please read the precautions on the back before filling in this page), \ ia Printed by the Central Sample Bureau of the Ministry of Economic Affairs Employee Consumer Cooperative 15 A7 _ B7 Printed by the Consumer Cooperative of the Central Falcon Bureau of the Ministry of Economic Affairs V. Invention Description (L2) The erosion speed of the same chamber surface. Another object of the present invention is to provide an appropriate transition from the treatment area by restricting the plasma to the treatment area. Another object of the present invention is any remaining polymer-forming chemicals in the area outside the processing area of the collection chamber, such as those remaining in the pump belt. SUMMARY OF THE INVENTION The present invention is based on a plasma The reactor uses M to process a workpiece to illustrate the embodiment, including a reactor wall of a processing chamber, a half of the guide window | a base in the room to support the workpiece with M during the time it is processed, a snake enters all Μ Let the plasma pioneer gas mule enter this room * Μ and a reactive antenna adjacent to one side of the semiconductor window opposite to the pedestal, used to fit into the interior of the chamber through the semiconducting mule window. The workpiece may be a flat substrate, and the semiconducting window (and the induction antenna) may be inside or outside the chamber. In the latter case, the semiconductor window may be the top plate portion of the reactor wall that is approximately parallel to the planar substrate and placed thereon, and the inductive antenna may be placed on the top plate portion to face through the semiconducting window. This plane is based on mule. Another alternative is that the semi-conducting sickle mouth can be the side wall of the raised wall of the reactor, which is roughly perpendicular to the periphery of the base and around some bases. This sense is close to this side wall section. More suitably, the sensor antenna is placed above the top plate portion and includes an elongated guide that extends in an arc shape, which is roughly parallel to the plane of the flat bed, and may be a flat surface or a top shape. The inductive antenna may be near the side wall part by a conductive coil curling around the side wall part. In a tribute example, this semi-conducting window, except for covering the induction antenna, melon paper size is suitable for Chinese housewife: os, Α4 Barking &gt;? N 1 »-I-----I 1 11— I -ί · —… I ^^ 1. »---! V— *” ^ 、-»(please read the precautions on the back before filling this page)-16-A 7 B7 5. Invention In addition to the description (13), it may also be a pole, in which case a ® connector is connected to the place. In this case, the semiconducting window is considered as a semiconducting window electrode. In one embodiment, a biased RF antenna is connected to the base, and the electrical connector of the semiconducting window electrode is connected to make the semiconductor window electrode one of the power sources of the high-pressure injection firecracker connected to the substrate. The anti-electrode is grounded, for example, to provide a uniform ground plane above the workpiece. Another embodiment includes a power splitter with an electrode connected to the semiconducting electrode and another electrode It is connected to the base, M and a base to receive power from a common source. There is another embodiment including a first source connected to the semiconducting «window The pole and a second «source are connected to the plane base. Du Yinze of the Consumer Cooperation of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page). This antenna can include an internal antenna part. The upper part of the center of the flat base body and an outer antenna part are placed on the periphery of the flat base part and are electrically separated from the inner antenna part. This embodiment may include a power splitter with a key connected to the semiconductor The window window pole M and another connection are connected to the sensor «antenna * M and a key input M receives power from a common source. Another option is an RF power splitter that can sense the antenna and the antenna part According to one of the present invention, the RF power is split between one power splitter. One power splitter has an external connection connected to the planar base M and another external connection is connected to the induction antenna. Receiving force II. In this case, the semi-conductor Miaokou «pole of this 霣 connector can be connected to the RF grounding wire. Another alternative way for the seedling to be a unicast radio frequency generator can also be connected to the half Guide joint of guide window. This scale is applicable; SS Falcon Falcon; CNiS) Λ4 Xianluo!; 0 Gong Jiang 17 Consumer Cooperation of the Falcon Bureau of the Central Economic Bureau of the Ministry of Economy. Printed by the agency A7 B7 V. Description of the invention (14) With a sense of overhead The mouth pole M and the side wall semi-conductor window electrode with the side-sensing antenna element can be combined in a single inverter. In this case, a power splitter can be cited, with a "I out An inductive antenna coupled to the top plate portion and another inductive antenna element coupled to the adjacent side wall portion, M and an input for receiving power from a common source. The semiconductor window and the workpiece can be separated by RF It is electrically driven, and at the same time, the work piece can be the counter electrode for the semi-conducting electrode, and the semi-conducting window window pole is the counter electrode for the work piece. This can be achieved by setting the following K of MU. Di refers to the first radio frequency of the first frequency as the source is connected to the semiconducting retention opening, and the second radio frequency power source of the second frequency is connected to the workpiece, a first ground The pass filter is connected between the RF ground wire and the window electrode. The first ground bypass filter cuts off the RF power around the first frequency and flexes the second frequency to transmit the radio frequency and the second ground. The pass filter is connected between the RF ground wire and the workpiece. The second ground bypass filter surrounds the second frequency and intercepts the radio frequency and transmits the radio frequency around the first frequency. In addition, a first insulation filter can be connected between the first RF power source and the semiconducting window window electrode to intercept the radio frequency close to the second frequency, and a second insulation filter can be connected to the second RF It is used to cut off the radio frequency between the Xiaoyuan and the workpiece and approach the first frequency. According to another special excitement, a guide «a flat surface on the back of the semiconductor window is placed on the outer surface of the semiconductor window, and the back of the guide 16 is directly connected to the connector * this conductive electrode includes multiple holes in it to let The inductive magnetic field of the induction antenna passes through the back surface of this conductive electrode. Whichever is more appropriate * The back surface of this guide includes the general Chinese national standard a: CNS on this paper. Λ44 .. (please read the notice on the back before filling in this page), ν »18 Central Ministry of Economy Bureau Staff Consumer Cooperative Printed 309692 a? ______ ^ __ V. Description of the invention (15) The multi-tilt guides are separated by holes in the arm, and these holes have an exciting width about the thickness of the semi-conducting window. Fan Yuan. According to another stimulus, a structurally supportable substrate can be bonded to the outer surface of the semiconducting window electrode. If necessary, the back surface of the conductor can be inserted between the window electrode and the supporting base. The back surface of the conductive body is directly connected to the electrical connector. The structural support substrate may be an antenna support supporting the induction antenna. The antenna bracket can be an insulator or a conductive joy (not encountered, self-inducted "antenna clues"). The conductive antenna bracket can be used as a conductive gigantic back flat on the outer surface of the semi-conducting bun window. In one embodiment, the sensory antenna includes an elongated guide bun extending in an arc-shaped path, the M and the antenna guide bracket includes an extension extending in an arc-shaped path and grips the elongated conductive bun, The bottle opens at a surface of the conductive antenna support that faces the semiconductor window electrode. In another embodiment, the guide antenna bracket includes a recess in the surface of the conductive antenna bracket facing the semiconducting window window pole, and the guide antenna includes a multi-elongated conductive rotator fixed in the recess . According to one implementation, the conducting antenna is an elongated conductive wire that extends non-concentrically in an arc. In one case, the elongated conductive mole that extends non-concentrically in an arc includes a central guide element and a multi-inclined spiral conductive element radially outward from the center. In another case, the elongated conductive mule that extends non-concentrically in an arc includes a country's perimeter-shaped guide element and since then the _peripheral-shaped guide element has many β-rotations radially inward. According to another contribution, this conductive antenna has a non-planar route, such as a three-dimensional spiral or Wen concentric three-dimensional spiral route, or a stack of moths. The paper size is applicable to the Chinese National CAS (CAS) Α4present grid I :! (): &lt; '(Please read the precautions on the back before filling in this page), 1T 19 A7 _B7 printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs V. Invention description (l6) This round of plaques includes a group appropriately The entrance of the gas rim wheel meets the semi-conducting upper part of the flat base snake. These gas emu inlets may be concentrated above the center of the wafer and / or may be distributed above the periphery of the wafer. A central gas ram feeder top can be sealed to the outer surface of the semiconducting window * pole * forming a gas manifold between the top of the central gas ram feeder and the semiconducting window electrode, the gas manifold surrounding this gas Qianglun population. In one embodiment, half of the guide baffle extends across the manifold until it separates the manifold into a pair of sub-manifolds, one of the sub-manifolds is adjacent to the top of the central air breeze feed and the other sub-manifold The system is adjacent to the gas key entrance, and the multi-cylinder gas feed channel meets this semiconductor baffle to protrude from the gas key entrance. In order to "remove the need for polymer deposition to make the inner chamber surface passive, a full semiconducting system" is provided in this chamber. This is provided by half of the guide halter skirt, which extends from the semiconducting opening or the top to the bottom to meet. * Provided by M-the full semiconducting garden wall restricts «slurry on the« plaque placed on the crystal Η. Circulating treatment of the semiconducting skeleton material S and the slurry process, such as silica erosion, can be compatible and therefore can be exposed to the indoor slurry without the risk of treatment pollution. In one embodiment, the semiconductor wall is temperature controlled to prevent polymer deposition. In another embodiment, the polymer of Dian Zhen on the wall of the semiconducting ray is applied to the surrounding wall of the semiconducting beer to give sufficient ion impact or "shooting convenience, preventing the polymer from Accumulated in the surrounding wall of semiconducting mule and protected. In still another embodiment, the polymer accumulated on the wall of the semiconducting ray is prevented by the combination of "temperature control and sputtering removal." »The surrounding wall of the semi-conducting stern must be kept to prevent aggregation (please read the precautions on the back before filling in this page). The size of the paper is applicable to the country and the country: CN'S) 4Λ regulations. 2U) ' 20 A7 B7 V. Description of the invention (17) The degree of plaque for the accumulation of things. Each of these * examples provides a revolutionary advancement in this technique, and the cause of the need to regularly treat the interior surface of the desuspension chamber is finally eliminated, thereby greatly increasing the productivity of the reactor. In order to prevent the plasma from leaking from the processing plaque, the plasma restricts the installation of the magnetic male around the opening between the processing area and the pump belt. In another embodiment, the slurry-limiting magnet is installed around the wafer slit valve and installs the M-limiting slurry in the processing area. An alternative method is available, or in addition to the plasma limit magnet Μ * plasma leakage can also be provided by a channel (for example, using M chip to enter and exit), the channel is narrow or has a wider than the separation ratio By. There is another way to choose, or otherwise, this channel can also go in and form by overlapping the board. Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) for the disposal of the plaque from the room for the treatment of polymer precursors (for example, into the pump ring in the room), process The surfaces outside the plaque (for example, inside the pump) are kept at # degrees below the junction temperature Μ of the polymer, so as to promote the condensation and migration of the polymer precursor material that wanders. Such surfaces may also be in the form of removable cold water. Areas containing such surfaces (for example, pump_rings) are insulated from the plasma * management area above the crystal H, so that there is no electrical pressure on such surfaces, the slurry is heated, large changes in leaching or ions The impact may cause the accumulation of polymer precursors to fall from it. Otherwise, this falling film shape will re-introduce the polymer material into the maze * and contaminate the wafer. In order to deal with the non-uniformity between the edge of the wafer and the center of the wafer (for example, the uneven etching frequency), this semiconducting window can be divided into clothing paper scales. China National Standard (CNS), \ 4W Swallow, 29? Public bureau 21 309692 A7 B7 V. Description of the invention (18) The components of the power are separated inside and outside (side and center, or side wall and top plate), and the RF power of the maize source can be applied in different proportions , Can handle the most uniform processing across the wafer. RF power can also be split or split between components. In addition, an overhead RF induction coil can also be divided into a number of coils where the plasma source power can be applied at a power that is not proportional. In addition to the top RF induction coil * One side of the induction coil can also be wound around the skirt part of the semi-conducting pulp wall, and it can be supplied with a single wave from the top coil. This semi-conducting wall works like a window * For the top coil Both the M and the coil and the RF power may be inductively connected to one of its poles. The uniformity of the treatment is to provide independent edge continuity and central gas mullet feed and is strengthened at another point of the full semiconducting mollusc treatment zone. The mixture is fed through these vertical feed lines, and these differences are provided by the selection of M to provide the maximum processing uniformity from the center of the wafer to the side sickle. This edge crocodile feeds the plasma synthesis above the edge of the shadow flap wafer and the central air snail feeds the color "Plasma synthesis above the wafer center". This edge ridge feed includes the ridge inlet from the side wall facing the center of the wafer, or the ridge inlet from below to the edge of the crystal H *, or near the ridge inlet to the wafer carrier that is laid up towards the edge of the wafer. This central air bream feed may be a single gas inlet at the center of the crystal H, or multiple air distribution inlets distributed above the center of the wafer, or a shower faucet-like configuration. According to another aspect of the present invention, there is no electricity "K series" used for semi-conducting wall painting, therefore, we do not have to crack the wall M semi-conducting material in this case. For example, the tungsten chalk can be formed from such a dilute medium such as silicon oxide. In any case, it must be formed of a good thermally conductive substance, so that the temperature wood paper temperature scale is generally accepted by the country (CV; A4 specifications (;! 丨 ΰχ297 mm) m ^ — m 11 ^ 1 tn n. —Fll ml — 1 ^^ 1- II 1.J (please read the notes on the back and fill in the ft page). Printed by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs 22 Printed by the Employee Consumer Cooperative of the Central Falcon Bureau of the Ministry of Economic Affairs System A7 B7 V. Description of the invention (19) It can be precisely controlled based on the polymer condensation temperature. The _ring provided along the National Week of the Yarrow Wafer Carrier is also controlled by ffi degree to prevent the accumulation of polymer on it. This collar can be formed of semiconducting cockroach material. Another alternative is for this. Ring can be a dielectric, such as «silicon or quartz. A brief description of the attached circle is the first description of the present invention. The first embodiment of the device has a planar coil antenna placed on top of a planar silicon top plate. The second plaque is a curve * illustrating the normalized forward pressure transfer wheel from a transmitting RF coil to a receiving firing line ffl Coefficient * and one of the first drawing of a flat silicon window in sending and receiving RF lines The third circle is a curve circle, indicating the normalized forward pressure coefficient from a transmitting RF coil to a receiving RF coil, and the cylindrical part of the M-silicon window is between the transmitting and receiving RF coils. Section 4_Describes an embodiment of the present invention that uses a split force between the silicon top plate and the wafer carrier. Section 5th describes an embodiment of the present invention that uses a separate RF power source M to drive the wafer base, namely The top of the supporting coil and the silicon top plate. The sixth circle illustrates an embodiment of the present invention, in which the top induction antenna is divided into concentric outer and inner windows powered by unicast. The description of the seventh circle refers to a round shape An embodiment of an edge-sensing antenna with a curled silicon edge. The eighth side illustrates an embodiment equivalent to the seventh one, in which the power from a single RF power supply is split between the silicon edge and the chip base ---- ^ --------- (Please read the precautions on the back before filling the nest page) The table paper is again applicable to the Chinese National Standard Falcon (CNS) Λ4 «grid <Μ7mm 309692 A7 B7 Employee consumption cooperation of the Central Falcon Bureau of the Ministry of Economic Affairs ) Chapter 9 describes the use of separate RF generators to drive the silicon side walls * chip base and inductive side antennas and lists their embodiments. Section lOffl describes the combination of the silicon top plate and the top induction antenna with the silicon side walls and plaque to flex Sense plaque edge coil and list its examples of embodiment. The 11th_description refers to the embodiment where the power split between the silicon sidewall and the wafer base is the 10th plaque. The 12th circle describes an embodiment, in which The top plate, the side wall, the top sense antenna and the side sense antenna are driven separately by RF power. The 13A circle description refers to the tribute example of the first stubborn person who refers to a garden top silicon roof. 13B_Describes the embodiment corresponding to the fourth letter by citing a top silicon top plate. Fig. 13C illustrates an embodiment corresponding to the one shown in Fig. 5 by citing a top silicon top plate. The first 3D circle description refers to the embodiment equivalent to the sixth one by citing a national top silicon top plate. 14. An example of an embodiment, there is a top-shaped silicon roof and the antenna on the top of the antenna has a top-shaped part of the figure on the top * and enters into a cylindrical shape with a cylindrical side wall curled up Partly. The 15th description shows the embodiment shown in FIG. 14, but the top shape and the _simple shape of this sensing antenna are mutually isolated and driven separately by RF power. The 16th side shows an example of the equivalent of the 6th emperor's treasure, in which the power from the radio frequency only is split between the internal and external inductive antennas. (Please read the precautions on the back first and then fill in this page. Γ,-° Τ This paper is again suitable for the Chinese family Jialong (CNS ': \ 4 叱 格 -24 A7 309692 B7 V. Invention description (21)) 17A The national specification is equivalent to the 15th embodiment, in which the force from a radio frequency generator is split between the top of the ring and the tube-shaped induction antenna section. The description of the 17B circle has a separate inside and outside In the embodiment of the dome-shaped induction antenna, between these two antennas, only the radio frequency generator's power is split. The 18th garden shows an example equivalent to the tenth embodiment, in which there is only the power of the radio frequency generator. It is split between the overhead induction antenna and the side sense antenna. 0 The 19th display shows an embodiment equivalent to the first circle, in which only the power of the RF generator is split between the top response antenna and the silicon top plate. 20_Description is an embodiment equivalent to FIG. 1, in which the power from only the RF generator is split between the top induction antenna and the chip base. FIG. 21 illustrates a first equivalent to a circle with a top roof 13A 圔 's embodiment, where the self-only RF generator power Split between the overhead antenna and the top silicon top plate. Section 22 · Description of a mandarin «in the 13A embodiment of a top plate with a top, where only the power of the radio frequency launcher is based on the top ® The antenna and the crystalline pedestal are split. Item 23_Describes an embodiment in which the wafer pedestal and the silicon top plate are separated from each other by RF power, and each serves as a counter electrode between each other.

第24·說明相當於第23·之實施例，其中硅頂板係W 頂形。 第25ΑΒΙ係此硅頂板之一*施例之側視画，包括一導 電體觜部平面。 m n·— n&gt;^— HV ϋ « ml B^in I flue ^^^^1 i^n&gt;« ftm—e 分 ·ν'α (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印製 25 經濟部中央標隼局員工消f合作社印裝 A7 B7 五、發明説明（22 ) 第25B園係導霣醱背部平面之一實施例之俯視·。 第25C_係導霣鑊背部平面之另一實施例之俯視圔。 第26·係硅頂板之一實施例之侧視圖，它係结合於一 支承基鏖。 第27·係相當於第26·之一實施例之侧視，其中此 支承基驩係一頂上感醮天線之一絕緣《夾特具。 第28顯係本發明之一實施例之俩視圖，其中此天線夾 持具係一導電繮。 第29圃係相當於第28画之一貢施例之側視，其中此 導«髏天線夾持具有一對含内和外頂上感«天線之環形孔 〇 第30 A圆係一頂上感應天線之非同心實施例之俯視麵 〇 第30B和30C圈分別係有平面和_頂形形狀之第30A圖 之感醮天線之另一可供灌擇之實現方法之俩視園。 第31A匾係頂上感*天線之另一非同心*施例之俯視 第31B和31C圈分別係有平面和圓頂肜形狀之第31A圈 之感騮天線之另一可供S擇之實現方法之供視圖。 第32_係一頂上感*天»之一雙國商形《旋實施例之 横截面俩視圏。 第33·係一對供第16_之内和外天線用之說明於第32 圔中之一型同心國筒形蠼旋感應天線之磺截面镅視圔。 第34圏係含多層感«天線之頂上感®天線之一實施例 本纸掁尺度通用中國國家橾隹.CNS； ) Λ4現‘5· H 公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 26The 24th explanation corresponds to the 23rd embodiment, in which the silicon top plate is W-topped. The 25th ΑΒΙ is a side view drawing of one of the embodiments of this silicon top plate *, including a flat surface of a conductive body. mn · — n &gt; ^ — HV ϋ «ml B ^ in I flue ^^^^ 1 i ^ n &gt;« ftm—e points Printed by the Standard Falcon Bureau Employee Consumer Cooperative 25 Printed by the Central Standard Falcon Bureau Employee Consumer Cooperative A7 B7 V. Description of Invention (22) The 25B Park is a top view of one embodiment of the back flat guide. The 25C_ is a plan view of another embodiment of the back surface of the guide wok. The 26th is a side view of an embodiment of a silicon top plate, which is coupled to a supporting base. The 27th series corresponds to the side view of the 26th one of the embodiments, in which the supporting base is an insulating "clamping tool" which is one of the top sense antennas. The 28th display is two views of an embodiment of the present invention, wherein the antenna holder is a conductive rein. The 29th garden is equivalent to the side view of the Gong Shi in one of the 28th paintings, in which the guide «skeleton antenna clamp has a pair of circular holes with inner and outer top sense« antennas. The 30A circle is an overhead induction antenna The top view of the non-concentric embodiment. Circles 30B and 30C are two views of an alternative implementation method for the sense antenna of FIG. 30A with a planar and apex shape, respectively. The 31A plaque is the top sense * Another non-concentric of the antenna * Looking down on the embodiment The 31B and 31C circles are the flat and dome-shaped 31A circle of the sacred antennae, another alternative implementation method For view. No. 32_ is a top sense * sky »one of the two-country quotient" cross-sectional view of the rotating embodiment. The 33rd is a pair of sulfonated cross-section acupuncture antennas for the 16th inner and outer antennas, which are described in the 32nd circle, a type of concentric country-tube rotation induction antenna. The 34th ring is one of the embodiments with a multi-layer sense «antenna top-on-the-antenna *. This paper is of the standard universal Chinese national clam.CNS;) Λ4 is now '5 · H mm) (please read the precautions on the back before filling in This page) Order 26

AT B7 五、發明説明（23 ) 之横截面俩視圔。 第35A直到第35E_說明一中央氣鱔進给硅頂板之一實 施例，其中第35A圔係一氣鐮進给頂部之仰視透視圖，第 35B_係為此之一環形密封之仲視透視_，第35C圈係第35B 圔之密封之一满截面圈，第35D画係顯示於氣體進给孔之 珪頂板之俯視透視圖* Μ及第35E画係第35D_之硅頂板之 局部橫截面圈。 第36A·係有一對氣醱充氣空由一硅晶片擋板分開之 中央氣醱進给硅頂板之另一實施例之一截面圈。 第36B_說明相酋於第36A醒之另一·可供選擇實施例。 第37 A_說明一法拉第屏如何可Μ包括於第1園之實 施例中。 第37Β_係第37Α·之法拉第屏之一俯視圖。 第38Α匾說明一法拉第屏如何包括於有一圖頂形頂板 之第10圖之實施例中。 第38BS1說明一法拉第屏如何可Μ包括於有一國筒形 半導黼窗口霣極和感應天線之第7至第9圖之實施例中。 第39 Αϋ係本發明之一較佳實現之一詳細横截面供視 經濟部中夬標準局員工消費合作社印裝 ^^^^1 ϋ·^— nn tn^i m· ml· ^mp «v—·^— Γ~ Λ^、y&gt;5 (請先閱讀背面之注意事項再填离本頁) 圈。 第39Β_係被引用於頂上感應天線中之導電鱺之一軸 向撗截面匾。 第40喔說明~另一可供選擇實施例，其中半導醱窗口 和感應天線係在反®器室之裡面。 第4 1Α_說明一相霣於第40·之實施例，其中此半導 ‘纸法尺度適用中3S家.樣草ί cm 洛；） 27AT B7 Fifth, the invention description (23) cross-section two eyes. 35A to 35E_Describe an embodiment of a central eel feeding silicon top plate, where 35A is a bottom perspective view of the top of a gas sickle feed, and 35B_ is a mid-view perspective of this ring seal The 35C circle is one of the full-section rings of the 35B seal. The 35D drawing is a top perspective view of the top plate of the gas inlet hole * Μ and the 35E drawing is the partial cross-sectional ring of the 35D_ silicon roof plate. 36A. A pair of cross-section rings of another embodiment of a central gas-feeding silicon top plate with a pair of gas-filled air separated by a silicon wafer baffle. 36B_Describes an alternative embodiment of the phase chief awakening at 36A. 37A_Describes how a Faraday screen can be included in the first garden embodiment. The 37B_ is a top view of one of the 37A Faraday screens. The 38A plaque illustrates how a Faraday screen is included in the embodiment of FIG. 10 having a top plate with a top view. The 38th BS1 illustrates how a Faraday screen can be included in the embodiments of FIGS. 7 to 9 having a cylindrical cylindrical semiconducting window window and an inductive antenna. The 39th Αϋ is one of the preferred implementations of the present invention. A detailed cross-section is provided for printing by the Employees Consumer Cooperative of the Zhongshang Standards Bureau of the Ministry of Economy ^^^^ 1 ϋ · ^ — nn tn ^ im · ml · ^ mp «v— · ^ — Γ ~ Λ ^ 、 y &gt; 5 (please read the precautions on the back before filling out this page) circle. No. 39B_ is a plaque of the axial cross section of one of the conductive scorpions cited in the overhead induction antenna. 40th description ~ Another alternative embodiment, in which the semi-conducting window and the induction antenna are inside the reflector chamber. The 4th 1Α_describes one phase as in the 40th embodiment, in which the semi-conductor ‘paper method scale is applicable to 3S homes. Sample grass CM cm Luo;) 27

經濟部中央標隼局員工消費合作社印IL A7 B7五、發明説明（24 ) 釀窗口係画頂形。 第41B圔說明一相酋於第40圈之實施例，其中此半導 體窗口係圓茼形，以及感應線圈係圔简形。 第42和第43圈分別地說明半導龌窗口霣極之分段部分 之餾視和俯視匾。 第44圖說明相當於第42圖之一實施例，其中半導齷窗 口係國頂形。 第45圖說明一實施例，其中射頻電力係在半導體窗口 電極和一邊壁霣極之間分裂，而它本身亦係半導贐窗口霣 極之分段部分。 第46和第47·說明第42和第44圈之實施例之變更式， 其中半導醱留口《極之外分段係接地，以及射頻霄力係在 半導體窗口電極之中央分段和晶Η基座之間分裂。 第48Α·係本發明之一實施例之霣漿反醮器之破開俩 視圔*此反臁器有一全方位半導鼸圊壁限制電漿於晶片上 面之一處理S内。 第48Β_係相當於第48Α·之一霣漿反®器之一破開侧 視麵&gt; Μ該電漿係輪向地隔絕以取代以晶片基座為準之侧 向地隔絕除外。 第48C圈說明相酋於第48Α圈之一實施例。但引用頻率 絕緣。 第49·係相當於第48 Α圈之一霣漿反應器之破開侧視 匾*而以該全方位半導黼圍壁係單石項除外。 第50圔係柑當於第48A疆之一霣縈反應器之破開錮視 (請先閱讀背面之;!意事項再填寫本頁)The Ministry of Economic Affairs, Central Standard Falcon Bureau Employee Consumer Cooperative Printed IL A7 B7 V. Description of Invention (24) The brewing window is painted on top. Section 41B illustrates an embodiment of a phase chieftain in circle 40, in which the semiconductor window is round and the induction coil is simple. Circles 42 and 43 illustrate the segmented view and overhead view of the segmented portion of the semiconductive semi-conducting window. Fig. 44 illustrates an embodiment equivalent to Fig. 42 in which the semi-conducting window is in the shape of a national roof. Fig. 45 illustrates an embodiment in which the RF power is split between the semiconductor window electrode and the side wall electrode, and it itself is also a segmented portion of the semiconductor window electrode. 46th and 47th. Explain the modification of the embodiments of the 42nd and 44th circle, in which the semi-conducting retention opening "outer-electrode segmentation system is grounded, and the radio frequency force is in the central segment of the semiconductor window electrode Split between Η pedestals. 48A. This is one of the embodiments of the present invention, which breaks the plasma reflectors. * This reflector has an omnidirectional semi-conducting membrane wall to limit the plasma to one of the treatments S on the upper surface of the wafer. The 48B-series is equivalent to the broken side of one of the 48A · one of the plasma reflectors. The view plane &gt; Μ This plasma system is roundly isolated to replace the lateral ground isolation based on the wafer pedestal. Circle 48C illustrates an embodiment of the phase chief in circle 48A. But quoted frequency insulation. The 49th series is equivalent to the broken side-view plaque of one of the 48th circle 霣 plasma reactors, except for the monolithic item of the omnidirectional semi-conducting wall. The 50th citrus should be stared at the breaking of one of the 48th Xinjiang Eng reactors (please read the back side first; please fill out this page if you wish)

*1T 本紙張尺度適用中國國家襟孳（CNS丨Α4規格i: 2U)..〇〇f ) 28 經濟部中央橾隼局員工消費合作社印製 A7 B7______ 五、發明説明（25 ) 麵，而以該半導體園壁係被劃分成為一圈盤中央部分和有 圖筒形裙邊之環形部分一項除外。 第51項係相當於第48A圔之一霣漿反應器之破開拥視 画，而Μ此半導鼸園壁俤被劃分成爲一圜盤中央部分，一 瓖邊部分以及一分開之國筒形裙邊一項除外。 第52圖說明第50圖之電漿反®器，具有分開之内和外 感應線圈。 第53鼷說明第51鼷之霣漿反應器，具有分開之内和外 感醮線圑。 第54_說明第48Α_之電漿反應器，具有一圓筒形感 應線圈園著此半導鼸圓壁之圖筒形裙邊捲撓。 第55·說明第49_之電漿反*器，具有一圖筒形感應 線圈圈著此半導鱺國壁之Η筒形裙邊捲撓。 第56圈說明第50圃之霣漿反應器*具有一國茼形感應 線圈圈蓿此半導醮園璺之國筒形祺邊捲撓。 第57·說明第51·之霣滎反«器，具有一_简形感應 線圈園著此半導鼸圏壁之Η筒形裙邊捲撓。 第58_係相當於第48Α鼷之一電漿反應器之破開視 ，以此半導齷園壁之頂板部分係圖頂形狀一項除外。 第59·俤相當於第49_之一霣漿反臁器之破開侧視圈 ，以此半導腥園壁之頂板部分係國頂形狀一項除外。 第60_係相當於第50·之一霣漿反醮器之破開侧視鼸 ，以此半導鼸圍璺之頂板部分係國頂形狀一項除外。 第61鼷係相當於第51_之一霄漿反醮器之破開供視醒 本纸浪尺度適用申國國家榇準（C\s ; Λ4坨珞；公f ; (請先閱讀背面之注意事項再填寫本貢) -='5 -29 - A7 B7 經濟部中央標準局員工消費合作杜印裝 五、發明説明（26 ，以此半導鼸園壁之頂板部分係圔頂形狀一項除外。 第62圔俤相酋於第52_之一霣漿反應器之破開锢視圏 ，以此半導體匾壁之頂板部分係國頂形狀一項除外。 第63圈係相當於第53_之一霣漿反釅器之破開細視圈 ，以此半導體園壁之頂板部分係國頂形狀一項除外。 第64匾係柑當於第54圔之一霣漿反醮器之破两钿視圖 ，以此半導龌圍壁之頂板部分係國頂形狀一項除外。 第65圔係相當於第55園之一霣漿反應器之破開俩視圈 ，以此半導醱圍壁之頂板部分係麵頂形狀一項除外。 第66讓係相酋於第56圖之一霣漿反應器之破两供視圈 ，以此半導體圍壁之頂板部分係顯頂形狀一項除外。 第67_係相當於第57_之一霣漿反懸器之破開供視麵 ，Μ此半導龌匾壁之頂板部分係麵頂形狀一項除外。 第68 Α_係可遘擇性地引用於第48至第67麵之實施例 中之霣漿限制磁雄之第一版本之繪圏。 第68Β·係可灌擇性地引用於第48至第67麵之*施例 中之電漿限制磁雄之第二版本之燴圏。 第68C圏係可選擇性地引用於第48至第67圈之實施例 中之電漿限制磁鐵之第三版本之螬園。 第68D_係可S擇性地引用於第48至第67圏之實施例 中之霣漿限制磁鐵之第三版本之鎗圈。 第68E·係可S擇性地引用於第48至第67·之實施例 中之霜漿限制磁鐵之第四版本之繪圏。 第69_係相當於第48A鼸但利用電容性播合之本發明 ,ν'β (請先閣讀背面之注意事項再填寫本頁)* 1T The size of this paper is applicable to the Chinese National Board (CNS 丨 Α4 specification i: 2U) .. 〇〇f) 28 The A7 B7______ printed by the Consumer Cooperative of the Central Falcon Bureau of the Ministry of Economic Affairs 5. The description of invention (25) The wall of the semiconductor park is divided into the central part of a circle and the annular part of the tubular skirt with the exception of one item. Item 51 is equivalent to the broken open support painting of one of the 48A magma reactors, and the semi-conducting wall is divided into a central part of a disc, a rim part and a separate national cylinder Except for one item shaped skirt. Figure 52 illustrates the plasma reactor of Figure 50 with separate inner and outer induction coils. Section 53 describes the 51st bead slurry reactor, which has separate inner and outer inductive loops. Article 54_Description Article 48Α_ The plasma reactor has a cylindrical induction coil curled around the cylindrical skirt of the semi-conducting round wall. The 55th description of the 49th Plasma Inverter has a picture of a cylindrical induction coil wound around the hem cylindrical skirt of this semi-conducting wall. The 56th circle illustrates the 50th nursery pulp reactor * has a country-shaped induction coil. The 57th description 51st of the 銣 荥 反 «device, with a _ simple induction coil around the semi-conducting wall wall of the H-shaped skirt curled. The 58th series is equivalent to the broken view of one of the 48A plasma reactors, except that the top part of the semi-conducting wall is the top of the figure. The 59th is equivalent to the broken side view circle of the 49th one of the pulp reflectors, except that the top part of the semi-conducting garden wall is the shape of the national roof. The 60th series is equivalent to the 50th one of the broken side view of the 銣 擮 憮 器, except that the top part of the semi-conducting mantle enclosure is the shape of the national roof. The 61st line is equivalent to the 51st one of the broken pulp counters for the purpose of awakening. The paper wave scale is applicable to the country ’s national standards (C \ s; Λ4 Tuo Luo; male f; (please read the back Matters needing attention and fill in this tribute)-= '5 -29-A7 B7 Employee's consumer cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs Du Printed Fifth, the invention description (26, the top part of the semi-conducting mulberry garden wall is a shape of the top Except. The 62nd Prime Minister is looking at the opening of the 52th one of the pulp reactors, so that the top part of the semiconductor plaque wall is the top of the country. The 63rd circle is equivalent to the 53rd_ One of the broken eyecups of the anti-collision device was excluded, except that the top part of the semiconductor garden wall was in the shape of a national roof. View of the view, except that the top part of the semi-conducting wall is in the shape of a national roof. The 65th line is the equivalent of the broken two visual circles of one of the 55th garden mud reactors, and thus the semi-conducting wall The top plate part is an exception to the top shape of the face. The 66th line allows the photoelectric reactor to break the two supply circles of view in one of the 56th figures, so as to use the top plate part of the semiconductor wall Except for the shape of the top of the display. The 67th series is equivalent to the 57th one of the broken suspension of the masonry suspension for the viewing surface, and the top part of the semi-conducting plaque wall is the top of the surface. 68 Α_ is a drawing that can be selectively quoted from the first version of the 霣 plasmo-limiting magnetic male in the embodiments of the 48th to 67th faces. The 68B is a selective reference from the 48th to the The 67th aspect of the second version of the plasma limited magnetron in the embodiment. The 68C ring is a third version of the plasma limited magnet that can be selectively cited in the 48th to 67th circle embodiments. No. 68D_ can be selectively quoted in the third version of the gun limit magnets in the 48th to 67th embodiments. The 68E can be selectively quoted in the No. 68D. The fourth edition of the frost slurry limiting magnet in the embodiment of 48 to 67 ·. The 69th series is equivalent to the 48A 鼸 but uses the capacitive broadcast of the present invention, ν'β (please read the back first (Notes to fill out this page)

30 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（2了） 之另一可供逛择買施例之霣漿反應器之破開側視圈。 實施本發明之最佳模式 本發明之基本觀念 參看第1圏，一電漿反«器包括一密封之國筒形室100 由圓茼形邊壁105所園封，一國盤形頂板110M及一檯座115 。一晶片基座120支承要由反應器予Μ處理之一半導體晶 Η或工件125。此晶片基座120可Μ是一靜霣夾盤组合，一 如吐露於待審核之美國專利申請案第08/——號由Kenneth S. Collins等人於1995年七月廿六日提出，檷是為”具有 一霣子之可變密度輪郸之霣漿源”，並讓渡給本專利申請 案之受讓人，此吐露之内容係引介入於本文中作為參考。 一《整射頻發霉機130通遇業界中眾所熟知一型之阻抗匹 配電路135而對晶片基座120®用一軀壓電。阻抗匹配霣路 ，例如，係吐露於美國專利菜第5,392,018號授予Collins 等人者，Μ及授予同等人之美國專利第5, 187,454號中者 。鄰近基座120之氣讎入口 137容許處理氣臁諸如一侵蝕劑 先驅氣鼸像CXFX氣龌者之進入。一真空泵140將室100排氣 至一理想之氣S。一頂上感*線圈天線14 5在頂板110上面 被夾持於一絕缘黼天線夾持具147内者係通過另一傳統式 阻抗匹配霣路155而連接至一霣漿源射頻發射機150，並感 *式縞合此射頓霣通》此頂板110而進入室内。 為了要在整傾晶Η 125之表面上面爲《®射頻霣力提 供一均勻之接地回行，以及為了要將朝向邊壁105潦動之 霣滾減至最小，此頂板係经接地線。不過，此一特撖需要 本紙乐又度適用中SS家標搫：CNS : A4W.f各：210 公壤1 (請先閱讀背面之注意事項再填寫本頁) 袈_30 Printed by the Employees and Consumers Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of Invention (2) Another broken side view circle of the beast pulp reactor that can be used for shopping. Best Mode for Carrying Out the Invention For the basic concept of the present invention, refer to the first ring. A plasma reactor includes a sealed country-shaped chamber 100 enclosed by a circular rim-shaped side wall 105. A pedestal 115. A wafer susceptor 120 supports a semiconductor crystal H or workpiece 125 to be processed by the reactor. This chip base 120 may be a combination of static chucks, as disclosed in the pending US Patent Application No. 08 / ——, proposed by Kenneth S. Collins et al. On July 26, 1995. It is to be a "deep pulp source with variable density wheels" and is transferred to the assignee of this patent application. The content of this disclosure is incorporated by reference in this article. An RF mold 130 encounters a type of impedance matching circuit 135 well known in the industry and uses a piezoelectric body for the wafer base 120®. The impedance matching system is, for example, the one disclosed in U.S. Patent No. 5,392,018 to Collins et al., And the U.S. Patent No. 5,187,454 granted to equivalents. The gas inlet 137 adjacent to the base 120 allows entry of process gas slurries such as an aggressive agent pioneer gas snail like the CXFX gasp. A vacuum pump 140 exhausts the chamber 100 to an ideal gas S. An overhead sensor * coil antenna 145 is clamped on the top plate 110 in an insulated antenna antenna holder 147, which is connected to a radio frequency transmitter 150 via another traditional impedance matching circuit 155, and Sense * style is combined with this shot, and the top plate 110 enters the room. In order to provide a uniform ground return on the surface of the trimming crystal H 125 for the RF power, and to minimize the rolling of the moving head toward the side wall 105, the top plate is grounded. However, this special requirement is required. This paper music is also applicable to the SS family standard: CNS: A4W.f: 210 Gongyang 1 (please read the precautions on the back before filling out this page) 袈 _

、1T 31 - 經濟部中央橾準局員工消費合作社印製 Λ 7 Β7 五、發明説明（28 ) 此頂板110來實施兩棰功能：U)作用如一導霣體，它可以 接地線，以及（b&gt;，作用如一非導霣黼，俾使自頂上線圈 天線145之射頻感應磁場可傳送通遇該處。為了要完成其 雙重功能®色，此頂板110係一半導體諸如硅者。此硅頂 板110可以«—絕缘腰158自室之導霣構件絕緣。吾人感覺 到此硅頂板110,作爲一半導體時，有足夠之導電性能Μ 作用如一霣極或接地平面。為了要垂直向地限制此霣漿接 近晶片125,並帶來此均勻之頂上接地平面進入更接近至 晶片125之附近（亦即，較邊壁105為更接近），以便将潦 動至邊壁105之邊向電漿霣滾減至最低，此硅頂板110適當 地偽放置於小於晶Η直徑之晶Η 125之距離Μ内，並以僅 晶Η直悝之分數（例如，對一 20公分直徑之晶片而在幾公 分之距離内）來靠近。此項距離大可至20公分而小可至1 公分，雖然如此，但適當之範圍係2至10公分。 此頂板110係一半導臞物質之一半導鼸窗口，適當者 此材料係硅。不過，其他眾所熟知之半導鼸材料亦可引用 ，諸如碥化硅，緒，Β-V類化合物半導繾之諸如砷化鎵 或《化錮，Μ及Π - - V類化合物半導鼸諸如汞鎘碲化物 。所要求之室溫處摻雜不純物水平给予硅留口霣極之所要 之霣阻率值者可自Grove之”半導鼸之物理學”一窨中第113 頁上第4至14·之曲编獲得。硅窗口之溫度必須保持在一 範園内，离於此範圍時它不能作用如一霣介質，以及低於 此範園時它不能作用如一導電醱。所要求之溫度範圍可獲 自Grove之第4之 8·之曲線，半導饑之物理學一害說明 ^^^1 ^^^^1 ^^^^1 ^—^1 —^^1 —^1 —^—&gt;1 ^mt Λ m In— flm —, 1¾ 、v'e (請先閱讀背面之注意事項再填寫本頁) 本呔永尺度適用中國國家標隼（C\s ' A4規珞、2!0 &lt;: 公f ) 32 A7 309692 B7 五、發明説明（29 )， 1T 31-Printed by the Central Consumer ’s Consumer Cooperative of the Ministry of Economic Affairs Λ 7 Β7 V. Description of the invention (28) This top plate 110 implements two functions: U) acts as a guide body, it can be grounded, and (b &gt;, Functioning as a non-conducting bead, so that the RF induced magnetic field from the top coil antenna 145 can be transmitted to meet there. In order to complete its dual function ® color, the top plate 110 is a semiconductor such as silicon. The silicon top plate 110 It can «—insulation waist 158 is insulated from the guide element of the chamber. I feel that this silicon top plate 110, as a semiconductor, has sufficient electrical conductivity Μ function as a pole or ground plane. In order to limit the vertical proximity of this slurry Wafer 125, and bring this uniform top ground plane into closer to the vicinity of the wafer 125 (ie, closer to the side wall 105), so as to roll the edge of the side wall 105 to the plasma At the lowest, the silicon top plate 110 is properly pseudo-placed within the distance M of the crystal H 125 smaller than the diameter of the crystal H, and only a fraction of the crystal H (for example, for a 20 cm diameter wafer within a few centimeters) ) Come to rely on The distance can be as large as 20 cm and as small as 1 cm. However, the appropriate range is 2 to 10 cm. The top plate 110 is a semiconducting window of one half of the conductive material, and the material is silicon. However, other well-known semiconducting materials can also be cited, such as silicon oxide, sulfide, B-V type compound semiconducting materials such as gallium arsenide or sulfide, M and Π--V type compound semiconducting Such as mercury, cadmium, and telluride. The required level of doping impurities at room temperature gives the desired resistance value for the silicon retention electrode can be obtained from Grove ’s “Physics of Semiconducting Ramen” on page 113 Accompanied by the tunes from 4th to 14th. The temperature of the silicon window must be kept within a range, it cannot act as a medium if it is out of this range, and it cannot act as a conductive medium when it is below this range. The temperature range can be obtained from the 4th-8th curve of Grove, a description of the physics of semi-conducting famine ^^^ 1 ^^^^ 1 ^^^^ 1 ^ — ^ 1 — ^^ 1 — ^ 1 — ^ — &Gt; 1 ^ mt Λ m In— flm —, 1¾ 、 v'e (please read the precautions on the back and then fill out this page) This standard is applicable to China National Standard Falcon (C \ s' A4 gauge, 2! 0 &lt;: public f) 32 A7 309692 B7 V. Invention description (29)

In n^i im f4-n wr«— n^i--· 、vd (請先閱讀背面之注意事項再填寫本頁) N型硅内作為溫度之功能之霣子*度。此一曲線顯示，低 於100° K時，此硅開姶作用如一霣介霣，然而离於600° K 時此硅開始作用如一導霣鼉。因此，吾人瘢當地保持硅頂 板110之曲在一範圍，在此範園内載饈電子濃度係以溫度 為準而極爲正常，那係在100° K和600° K之範酮内。 經濟部中央標隼局員工消費合作社印裂 第1園之霄漿反慝器之優酤包括；與傳统型之反鱖器 有一線圈園著邊壁捲撓者相比較，由頂上線圈天線145所 產生之霣漿溧功率之播越整鹤晶片表面之均勻分布。因此 ，電粲離子產生係不限制於邊壁之附近而係均勻地分佈在 晶片表面上面。與上文提及之吐露於美鼷專利案第4,948, 4 58號中有一頂上線圈天線在一霣介質頂板上面之霣漿反 應器中趨向一邊之電滾滾動相比，此電漿離子均勻性係因 爲此接地霣極110減少了或消除了電漿霣溁滾動至邊壁105 而增強。同時，晶片和頂板之間緊密之垂直向雎近滅小了 晶片和霣漿離子產生之S域之間之距離。藉Μ減小再组合 之耗損並容許室壓增加（例如，可Μ在50至200 «Torr之範 園内 &gt;。此一在室壓上之增大對增強某些*理性能之參數 可Μ是極理想，諸如侵蝕逛擇性。在第1圈之實施例中霣 漿離子產生之均勻性（由頂上線圈天線145逹成者）與«滾 之潦向室邊壁之減少（以接地硅頂板110呈緊密接近於晶Η 125達成）相結合，減小或消除了在晶片中央之處理（例如 ，侵蝕）和在晶片周邊之處理兩者間之差異。特別是，過 份侵蝕或在晶片周邊穿孔之鑲向係滅小，而在同一時間小 規棋之侵蝕於晶片中央*停止之趨向係亦減小。同時，接 本纸伕尺度適用中國國家，漂進:;CNS _ Λ4規洛；2i〇. 彡警t 33 經濟部中央樣隼局員工消費合作社印製 A7 B7五、發明説明（30 ) 近晶片周邊Μ雕琢光致抗蝕劑展蔽邊緣並大致地搜蝕此光 致抗蝕劑而给予不良侵蝕外形之發生之趨勢係減小或消除 。因此，第1圈之«漿反醮器可以優越浸拽輸郸和具有棰 少或沒有撖Α荷之最佳侵蝕選择性，Μ非常小之外形大小 *提供稹極侵蝕性能橫越整傾晶片表面。此外，由於沒有 或檯少之邊壁105之參與，反臁器構件之消耗Μ及相W聯 之操作成本係顯箸地減少。依此*本發明提供秦界中一革 命性之進展。 不過，有若干潛在問題，如果不予Μ解決，它可能讓 第1画之反醮器成為不實際。首先，有硅頂板110是否會 阻播頂上線圈天線145之射頻感醮磁場之到達室100之問題 。例如，硅頂板110對射頻感應磁場之阻抗可能太大而不 容許其傳_通遇該處。該也許由硅頂板110内潘雜不純物 濃度所彩響，或者由硅頂板110之溫度所影《。另一可供 灌擇方式為此射頬感醮磁場通過硅頂板110之集*深度可 能未超過此頂板厚度，因此而阻礙其傅_通過該處。同時 ，通過室100内«漿之射頻感«磁場集*深度也許大於室 离度（亦卽晶片頂部霄搔間隙），因此射頻怒®霣力可能不 足夠以鎘合至電漿。另一問題是頂板110對晶片丨25之緊密 接近可能不足夠Μ自靠近置於下面之晶片125之霣漿鞘分 開靠近頂板110之«漿鞘*因而自頂至底短路。同時頂板 110之硅物質之揷入之進入鴒®射祺發電機130之射頻回行 線路内可能間或使射頻镉®霄耗失變得頭著。最後，也許 不存在一遴用或實際抗阻率值之範園之供半導釅窗口用者 i !: m I - ..... nn nn 1 1 I — n !!-!- .,--- (請先閲讀背面之注意事項再填寫本f ) 本纸朵尺度適用中國國家.漂來‘:CNS ) ,\4说格（；：丨().&lt; 297公％ -34 - 經濟部中夬樣準局員工消費合作社印裝 A7 _ B7 五、發明説明（31 ) •而在其内可讓射頓想_磁場可Μ耩合可不會有不正酋之 耗失或衮滅。埴些間題俤經解決或不陳列於立邸之下文中 之分析内。 晡後磁邊夕孅_8雄&gt;輋霜琛麻偽充分地钼，闵thgfi炫 有姓垄抽.被趿收人霤雄肉： 自頂上線圈天線145之射頻感醮磁場之集虜深度係小 於頂板至晶片高度（例如，在晶片直徑之範圍上或更小〉， 因此，自線圈天線145之功率係感«式地有效地鎘合至霣 漿。逋可以在兩檯狀況下顯示《亦即一锺碰撞之集虜深度 ，在其中此霣粲源射頻角頻率係較霣漿瞬間轉移镡性碰撞 頻率要小得多，Μ及一種少有碰撞之集虜深度，在其中霣 漿源射頻角頻率係較電漿瞬間轉移彈性磁撞頻率要大很多 0 通過霣漿之射頻慼臁磁壜之碰撞集虜深度Sc係計算 如下： (1) &lt;SC = (2Tm/w) 1/2c[ (e2ne)/(e〇me) ]_1/2’ 其中： r· = 1.4· 1〇7秒-1者係供氬氣霣漿在300° K之fi度 和5 «Torr室β時用之霣子至中子瞬間轉移碰撞頻率， ω = 12.57· 1〇8弧度/秒係®用於線圈天線之感應 磁場射頻霣源之角頻率， c = 3 ♦ 10»米/秒係光速， e = 1.6022 · 摩侖係霣子«荷， ηβ = 5 . 1〇17米3係可應用之霣子密度， 本纸浪尺度遥用中S國家標隼ί CNS ) Α4現格21〇.&lt; 公缝1 (請先閱讀背面之注意事項再填寫本頁) &quot; 經濟部中央樣隼局員工消費合作社印11 A7 B7 五、發明説明（32 ) ε。=8.85. 10 12法拉/米係自由空間之電容率，以 及 ne = 9.1095 · 10_31千克係霣子質量。 將前述各值代入第一等式產生： (2) 5 c = 1.1 cm 作為碰撞集膚深度。 通過電漿之射頻感應磁埸之少碰撞集虜深度S-係經 計箄如下： (3) 〇p = c[(e2ne)/(e〇me)l'1/2. 將前述各值代入第三等式產生： (4) -5 ™ 0.8 cmIn n ^ i im f4-n wr «— n ^ i-- · 、 vd (please read the precautions on the back and then fill out this page) N * silicon as a function of temperature *. This curve shows that when it is lower than 100 ° K, the silicon opening acts like a yoke, but when it is 600 ° K, the silicon starts to act as a guide. Therefore, we keep the curvature of the silicon top plate 110 within a range, and the concentration of electrons contained in the fan garden is very normal based on the temperature, which is within 100 ° K and 600 ° K of the ketone. The advantages and advantages of the pulp and rice shovel in the first garden of the Central Standard Falcon Bureau Employee Consumer Cooperative include: compared with the traditional type of anti-mandarin fish with a coil on the side wall and coiled on the side wall, the top coil antenna 145 The power of the generated power is spread evenly across the surface of the wafer. Therefore, the electric ion generation system is not limited to the vicinity of the side walls but is evenly distributed on the wafer surface. The plasma ion uniformity of this plasma is comparable to that of the above-mentioned electric roller rolling towards the side in the bead plasma reactor above the top plate of a dielectric medium disclosed in US Patent No. 4,948, 4 58 This is because the grounding electrode 110 reduces or eliminates the plasma ball rolling to the side wall 105 to enhance. At the same time, the close vertical orientation between the wafer and the top plate reduces the distance between the wafer and the S domain generated by the plasma ions. Use M to reduce the recombination losses and allow the room pressure to increase (for example, it can be within 50 to 200 «Torr's range>. This increase in room pressure can enhance certain parameters of physical properties. It is ideal, such as erosive selectivity. The uniformity of the production of the plasma ions in the example of the first circle (from the top coil antenna 145) and the reduction of «rolling towards the side wall of the chamber (to ground silicon The top plate 110 is formed in close proximity to the crystal H 125), which reduces or eliminates the difference between the processing in the center of the wafer (eg, erosion) and the processing at the periphery of the wafer. In particular, excessive erosion or The mounting direction of the perforation in the periphery is small, and at the same time, the tendency of the erosion of the small gauge chess to the center of the wafer * is also reduced. At the same time, the size of the received paper is suitable for the country of China, drifting into:; CNS _ Λ4 regulations ; 2i〇. 彡 警 t 33 A7 B7 printed by the Employee Consumer Cooperative of the Central Sample Falcon Bureau of the Ministry of Economic Affairs 5. Description of the invention (30) Carved the photoresist near the periphery of the chip to cover the edges and roughly eroded the photoresistance The tendency of the corrosive agent to give bad erosion appearance is reduced Eliminate. Therefore, the 1st circle of the «powder counter device can be superior in leaching and transporting and has the best erosion selectivity with little or no charge, Μ very small outer size * provides erosion performance Tilt the wafer surface. In addition, because there is no or less side wall 105 involved, the consumption of the reactor components M and the associated operating cost are significantly reduced. According to this * the present invention provides a revolution in the Qin world However, there are a number of potential problems. If it is not resolved, it may make the anti-converter in Picture 1 impractical. First, whether the silicon top plate 110 will block the radio frequency induced magnetic field of the top coil antenna 145 The problem of reaching the chamber 100. For example, the impedance of the silicon top plate 110 to the RF induced magnetic field may be too large to allow it to pass through. It may be caused by the concentration of impurities in the silicon top plate 110, or by the silicon The temperature of the top plate 110 is influenced by "Another alternative way for this is the collection of the magnetic field of the infrared sensor through the silicon top plate 110 * The depth may not exceed the thickness of the top plate, thus preventing it from passing through. At the same time, through Room 100 «RF of the pulp «Magnetic field * depth may be greater than the chamber separation (also the gap on the top of the chip), so the RF power may not be enough to join the plasma with cadmium. Another problem is the close proximity of the top plate 110 to the chip 丨 25 Insufficient Μ from the plasma sheath close to the wafer 125 placed below the «plasma sheath * close to the top plate 110 and thus short-circuited from top to bottom. At the same time, the silicon material of the top plate 110 enters into the 鸰 ® 漸 琪 GENER 130 The radio frequency return line may occasionally cause the loss of radio frequency cadmium®. Finally, there may not be a selection or actual resistance value for the semi-conducting window i !: m I -..... nn nn 1 1 I — n !!-!-., --- (please read the precautions on the back before filling in this f) This paper size is suitable for Chinese countries. Biaolai ': CNS) , \ 4 说 格 （;: 丨 (). &Lt; 297% ％ -34-Printed and printed A7 _ B7 by the Consumers ’Cooperative of the Ministry of Economic Affairs of the Ministry of Economic Affairs A7 _ B7 V. Description of the invention (31) Don't think _ the magnetic field can be combined, there will be no loss or annihilation of the unhealthy chieftain. Some of these problems have been resolved or not displayed in the analysis of Lidi's text below.噡 后 磁 边 夕 孅 _8 雄 &gt; Yi Shuangchen is full of molybdenum, Min thgfi has a surname. The male is taken away: the depth of the collected magnetic field from the top of the coil antenna 145 It is smaller than the top plate to the height of the wafer (for example, in the range of the diameter of the wafer or smaller). Therefore, the power from the coil antenna 145 can effectively combine cadmium to the paste. The display can be displayed under two conditions. That is, the depth of a concentrated collision of a collision, in which the frequency of the radio frequency angle of the source is much lower than that of the instantaneous transfer of the beet pulp. Μ and a depth of the collector with few collisions, in which the source of the beet The radio frequency angular frequency is much greater than the elastic magnetic transfer frequency of the instantaneous transfer of plasma. The collision depth of Sc by the radio frequency of the engraved plasma Qi is calculated as follows: (1) &lt; SC = (2Tm / w) 1 / 2c [(e2ne) / (e〇me)] _1 / 2 'Where: r · = 1.4 · 1〇7 seconds -1 is for the argon gas slurry at a fi degree of 300 ° K and 5 «Torr chamber β The frequency of the instantaneous transfer of the used son to neutron, ω = 12.57 · 10.8 radians / sec. ® The angular frequency of the RF magnetic source of the induced magnetic field of the coil antenna, c = 3 10 »m / s is the speed of light, e = 1.6022 · Molun system« charge, ηβ = 5.1017 m3, the applicable density of 霣 子, this paper wave scale is used remotely in the S national standard Falcon CNS ) Α4present grid 21〇. &Lt; Male sewing 1 (please read the notes on the back before filling in this page) &quot; Printed by the Ministry of Economic Affairs Central Falcon Bureau Employee Consumer Cooperatives 11 A7 B7 V. Description of invention (32) ε. = 8.85. 10 12 Farads / meter is the permittivity of free space, and ne = 9.1095 · 10_31 kilograms is the mass of young child. Substituting the aforementioned values into the first equation produces: (2) 5 c = 1.1 cm as the collision skin depth. The collision depth of the magnetic field through the plasma induced radio frequency induction is as follows: (3) 〇p = c [(e2ne) / (e〇me) l'1/2. Substitute the above values The third equation produces: (4) -5 ™ 0.8 cm

P 作為少碰撞集虜深度。因此，在任一檯狀況下此射頻感應 磁場之集虜深度係顯著地小於晶Η至頂板高度，因此，此 射頻源電力係充分地由霣漿所吸收。 浦诚砵頂板夕嘛瘭磁摄夕塞盧深麻傀»盾板《麻±，With 它可桶满頂板而伸賻 線圈天線145之射頻感應磁塲有一在硅之集I»深度遠 超過硅頂板之一吋（2 . 54公分）。因此，此射頻感應磁場係 足夠地深Μ穿透此硅頂板11〇(倘若此相關之阻性損失係充 分地小時〉。此將亦可藉計算入射在一無限平面硅方板上 之均勻平面波之集虜深度5來作極接近之估計。 其中： f = 2兆赫Η者，係連接至線圈天線145之射頻電源130之頻 冬纸張疋度速;ί] 士國國家標箪CNS 咯.公f ) (請先閱讀背面之注意事項再填寫本f ) 袈- -36 - 經濟部中央標準局員工消費合作社印裝 A7 B7 五、發明説明（33 ) 率， μ = 4π · 1〇-7享利/米係硅方板之導磁係數，Μ及 σ = 3.33 Ώ—1米1係30 Ω-公分霣阻率硅方板之霣導。 將前述各值代入此等式，為S產生 δ = 0.195 β 因此，此集虜深度悌大約八倍於硅頂板Π0之摩度，Μ及 因此，此射頻感«磁壜有一進入室10内之良好滲透深度* (倘若此硅頂110對射頻感*磁場並不具有高阻抗之姿態&gt; 〇 砝谓板射射糴滬鏖磁播旦有一低Μ杭夕咨籣 射頻感醮磁場通遇下列慵況之一傾珪頂板ΠΟ之實施 例之傅輪•硅頂板被視為在室fi下有30Ω公分阻抗率之一 圓盤形狀之硅板，計量之直徑13.5时，Μ及厚度1时者， 係藉放置想應線圈在板之相對兩面上而作試驗，連接此線 圈之在板之一面上者至一可變頻率射頻源，以及建接在板 之另一面上之嫌圏至一多波道分析器，並隨後拂掠射頻源 之頻率自千鎗玆至10兆麴茲。多波道產生之_出係說明於 第2圓内。對檷示Μ ”量”之曲線言，此垂直向轅線係接收 和傅送倍«之量之比率，並自在比例呎之頂部處合併之一 值伸展並下落於0.1未合併增量，而此水平向麯線係頻率 ，並自在右邊之1千鶬茲伸展至右邊之10兆赫玆。對檷示 Μ相位之曲線言，此垂直向輪線係接收和發送信號之相位 角之間之差異*並自在比例呎之頂部處20度之一值伸展， 並下落於20度增量内。第2_之曲線很清晰地指示實際上 本紙*尺度適闲中國國家標拿（CNS )Α4現珞_ 2!0，&lt; 公缝 1 1^1 I m I 一·n nn 111 f mt 一OJ (請先閲讀背面之注意事項再填寫本頁) 37 經濟部中央標準局員工消費合作杜印製 A 7 B7 五、發明説明（34 ) 沒有射頻功率之耗失通通此硅板於2兆麴玆處，而在2兆 _茲以上之頻率處亦僅有極小之耗損。 當第2麵說明Μ—圓盤狀硅板所獲得之结果時，第3 圈則說明Μ—圔筒形硅板之有一 12.3时外直徑，1公分壁 厚度者，在室溫下所播得之结果。一悔五回轉轉_線圈係 圍著臞筒形板之外面捲撓，用Μ傳送射頻功率進入由圔筒 形硅板所圍撓之内部容積内。計量悌發生在内部容稹之中 央，取自一 8酒轉接收線圈之有一 2.3时外直徑和一 3吋長 度者。對檷示以量之曲结言，此垂直向鞴線係接收和發送 信號之量之比率，Μ及自在比例呎頂部«併合之一值伸展 ，並下落於0.1未併合增量内，而同時此水平向轅線係頻 率，並自左邊之1千赫茲伸展至在右邊之10兆鰺Η。對播 示以”相位〃之曲線言，此垂直向麯線悌接收和發送信號 之相位角之間之差異，並自在比例呎頂部處0°之一值伸 展*並下落在20°之增量内。第2 _之曲線很明白地指示 ，實際上在2兆赫ΕΜ外沒有射頻功率通過此硅板之耗失 *而在2兆赫玆Μ上鼴僅有比較小之耗損。因此，此硅板 110對射頻感應磁埸係接近透明。 砝谓板# —窿泛夕邋麻齦讕h斟射镅聃鼷磁遢持ffiBH杭咨P as the depth of less collision. Therefore, the collection depth of the RF-induced magnetic field under any condition is significantly smaller than the crystal H to the height of the top plate. Therefore, the power of the RF source is sufficiently absorbed by the encyclopedia. Pu Chengyan's top plate Xia Meng magnetic photo Xielu deep Ma Pui »shield plate" Ma ±, With It can fill the top plate and extend the coil coil antenna 145 RF induction magnetic field has a set of silicon I »Depth far exceeds silicon One inch (2.54 cm) on the top plate. Therefore, the RF induced magnetic field is deep enough to penetrate the silicon top plate 11 (if the related resistive loss is sufficiently small>. This will also be calculated by calculating the uniform plane wave incident on an infinite flat silicon square plate The depth of the set is 5 to make an extremely close estimate. Among them: f = 2 MHz Η, which is connected to the coil antenna 145 of the RF power supply 130 of the frequency paper speed; ί] Shiguo National Standard CNS slightly. Public f) (Please read the precautions on the back before filling in this f) 袈--36-Printed and printed A7 B7 by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs V. Invention description (33) Rate, μ = 4π · 10-7 Hengli / meter is the magnetic permeability coefficient of the silicon square plate, Μ and σ = 3.33 Ώ—1 meter 1 is the 30 Ω-cm resistivity of the silicon square plate. Substituting the aforementioned values into this equation yields δ = 0.195 β for S. Therefore, the depth of this set is approximately eight times the friction of the silicon top plate Π0, and therefore, the RF induction Good penetration depth * (If the silicon top 110 has no high-impedance attitude to the RF induction * magnetic field> 〇 Weight means that the plate is shot and the magnetic field has a low magnetic field. The magnetic field of the RF induction meets the following The first example of the tilting roof plate ΠΟ of the case is the silicon wheel. The silicon top plate is regarded as a disk-shaped silicon plate with an impedance of 30Ω under the chamber fi. When the measured diameter is 13.5, Μ and thickness 1 It is tested by placing the coil on the opposite sides of the board, connecting the coil on one side of the board to a variable frequency radio frequency source, and building up on the other side of the board. The frequency of the channel analyzer, and then the frequency of the sweeping RF source is from 1000 to 10 megahertz. The output of the multi-channel is described in the second circle. The curve of the "quantity" shown for the filter is this The vertical line is the ratio of receiving and Fu sending times, and it is merged at the top of the scale feet. The value stretches and falls in the 0.1 unincorporated increment, and this horizontal curve is the frequency and extends from 1 kilohertz on the right to 10 megahertz on the right. For the curve showing the phase of M, the vertical wheel It is the difference between the phase angles of the received and transmitted signals *, and extends from a value of 20 degrees at the top of the scale feet, and falls within 20 degree increments. The 2nd curve clearly indicates the actual paper * scale Leisure Chinese National Standard (CNS) Α4 is now _ 2! 0, &lt; male seam 1 1 ^ 1 I m I one · n nn 111 f mt one OJ (please read the precautions on the back before filling this page) 37 Du 7 printed by the Central Standards Bureau of the Ministry of Economic Affairs for consumer cooperation A 7 B7 V. Description of invention (34) No loss of radio frequency power This silicon plate is located at 2 megahertz, and at frequencies above 2 megahertz There is only minimal wear. When the second side shows the results obtained by the M-disc-shaped silicon plate, the third circle shows that the M-shaped cylindrical silicon plate has an outer diameter of 12.3 hours and a wall thickness of 1 cm. The result broadcasted at room temperature. One repentance and five rotations_ The coil is wound around the outer surface of the tube-shaped plate The power enters the internal volume surrounded by the cylindrical silicon plate. The metering takes place in the center of the internal volume, which is taken from an 8-inch wine transfer receiving coil with an outer diameter of 2.3 hours and a length of 3 inches. In conclusion, the ratio of the amount of the signal received and sent by this vertical line is the extension of M and the value of the merger at the top of the scale feet, and it falls within 0.1 unmerged increment, while the horizontal direction The line frequency is from the 1 kilohertz on the left to the 10 megabytes on the right. For the broadcast, the difference between the phase angle of the received and transmitted signals is the vertical curve. , And extend from a value of 0 ° at the top of the scale feet * and fall within an increment of 20 °. The 2nd curve clearly indicates that, in fact, there is no RF power loss through the silicon board outside the 2 MHz EM *, while there is only a relatively small loss at 2 MHz. Therefore, the silicon plate 110 is nearly transparent to the RF induction magnetic field system. Weights board # —Yan Panxi sloppy gingival squirting 镟 射 镅 遃 鼷 Magnetic Retaining ffiBH

H 上文以第2和第3画為所說明之試驗係重覆於硅温 度200°和50(Τ度時而類似之结果偽«得*展示該珪頂板 110之溫度可在一廣大範園上作變化以便在須要時調整聚 合及氰淸除程序。不1，在溫度攝氐300度以上時此硅頂 太械·張尺度適用中國國家樣-A .: C\S ) Α4規，珞..Π)/ :‘厂公聲 (請先閱讀背面之注意事項再填寫本頁)H The test described in the second and third pictures above is repeated at the silicon temperature of 200 ° and 50 (similar to the time T). The result is pseudo «de * shows that the temperature of the top plate 110 can be in a wide range of models Make changes in order to adjust the polymerization and cyanide removal procedures when necessary. No. 1, when the temperature is above 300 degrees Celsius, the silicon top is too mechanical. The Zhang scale is applicable to the Chinese national sample -A .: C \ S) Α4 regulation, Luo ..Π) /: 'Factory public voice (please read the precautions on the back before filling this page)

’V •V5 38 - 經濟部中央標準局員工消費合作社印策 A7 B7 五、發明説明（35 ) 板110變得内禀，並因此截斷頂上線圈天線145之射頻感應 磁場之到達室100。吾人可適當地《用一高阻抗性硅（例如 ，30 Ω-c·於室溫時&gt; 於頂板110内。否則，例如，使用0.01 Ω-c·阻抗性之桂於頂板110内即會需要減小射頻感醮磁場 之頻率至千赫Η之範圍或更低Μ便能通遇此硅頂板而結合 。另一項選擇係減小頂板厚度。 a頂诟存儡g射镅雪通^岡行路埴中奮雉未潘加蚝涓 Μ硅頂板110之插入供偏壓發電機130用之射頻回行路 線内所惹起之射頻功率耗損係低之淸況可以藉計算硅板對 正常至板之表面之電流通量之電阻而可見，值定一集•深 度係較板厚度要大很多，並假定硅板之背面上一完好導電 鼸接地平面之出現》此一霄阻係顯示要較在晶片基座120 處之計量之驅動酤射頻阻抗要小很多，因此*硅頂板之插 入僅造成在總《齷射頻功率耗損上之一小分數之增加。 硅板對正常至板表面之霄流通量之電阻係計箄 如下β’V • V5 38-Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of Invention (35) The board 110 becomes intrinsic, and thus intercepts the radio frequency induced magnetic field of the overhead coil antenna 145 to reach the room 100. We can appropriately use a high-impedance silicon (for example, 30 Ω-c · at room temperature> in the top plate 110. Otherwise, for example, use 0.01 Ω-c · impedance in the top plate 110 will be It is necessary to reduce the frequency of the RF-induced magnetic field to the range of kilohertz or lower to be able to combine with this silicon top plate. Another option is to reduce the thickness of the top plate. A 顶 貟 存 儡 g 射 镅 雪 通 ^ The power consumption caused by the insertion of the silicon top plate 110 in the RF return route for the bias generator 130 in the Gangxing Road is not low. The power consumption of the RF power consumption is low. The resistance of the current flux on the surface can be seen, and the value is set for one set. The depth is much larger than the thickness of the board, and it is assumed that the appearance of a well-conducted ground surface of the conductive ram on the back of the silicon board. This resistance is shown to be more than The measured driving RF impedance at the chip base 120 is much smaller, so * insertion of the silicon top plate only causes a small fractional increase in the total RF power consumption. The silicon plate is normal to the surface of the board. The resistance is calculated as follows β

Rslab =： Γ (d/2)~2/n, 其中： t = 0.0254 _係板厚度 d = 0.318 b係板暴露於霣滾通量之有效直徑，以及 Γ = 0.30 Ω-·係30 Ω-c·阻抗率之硅在室溫下之阻抗率 〇 將前述各值代入為之等式中爲板霄阻而產生·· R,lab = 0.96 Ω 本纸張尺度適用中國國家樣嚷：C\s ) :\4現咯：!0 &lt; , 策 1 訂 (請先閱讀背面之：:£意事項再填寫本頁) 39 A7 B7Rslab =: Γ (d / 2) ~ 2 / n, where: t = 0.0254 _ thickness of the plate d = 0.318 b effective diameter of the plate exposed to the rolling flux, and Γ = 0.30 Ω- · 30 Ω- c. The resistivity of silicon at room temperature. Substitute the aforementioned values into the equation for the plate resistance. · R, lab = 0.96 Ω This paper scale is applicable to the national sample in China: C \ s): \ 4 is now:! 0 &lt;, policy 1 order (please read the back of the page :: £ Notes and then fill out this page) 39 A7 B7

經濟部中央標準局員工消費合作社印$L 五、發明説明（36 在晶片基座120處之驅動點阻抗率工業已在第1圔内 所說明之此類典型之平行霣極霣漿反醮器中計量（以自一 線圈天線2.0兆鎗E霄漿鬣源射頻感應磁塲和一暱用之射 頻偏壓在1.8兆鶄E之基座上）爲38.7Ω於一 50 ·Γ之角 度«。此一驅動點阻抗率之部分係：Printed by the Ministry of Economic Affairs, Central Bureau of Standards, and Consumer Cooperatives. $ L. 5. Description of invention (36. Impedance of the driving point at the wafer base 120. Such a typical parallel pole-to-pole pulp counter such as the one described by the industry in Section 1. The middle measurement (using a coil antenna 2.0 trillion gun E Xiaojiang's radio frequency induction magnetic field and a RF bias biased on the base of 1.8 trillion E) is 38.7Ω at an angle of 50 · Γ «. The part of the impedance at this driving point is:

Re(Z) = 38.7 Ω cos(50. 1° (180/π) ) 24 Ω. 由硅頂板之插入所惹起之射頻功率耗損上之分數增加 係：Re (Z) = 38.7 Ω cos (50. 1 ° (180 / π)) 24 Ω. The increase in the fraction of the RF power consumption caused by the insertion of the silicon top plate is:

Rslab/Re(z) = 0.096/24 = 0.004, 此係非常小之分數。因此，一硅板之插入射頻偏κ發 霣機130之射頻回行路線内僅添加了 一可予忽視之霣阻量 〇 雪雄首疳霣》鏽亶醒麻偽足_地钼Μ癣免頂板和晶片之間 在霣漿之邊续《有一護罩，離子密度橫越此護軍而自 霣漿離子密度值下落至零。如果此護單之在晶片表面者逋 遇在室頂板處之_罩時，即沒有《漿在此室内。离霣麼霣 滎之直滾«瀆護罩厚度，s，係計算如下： s = (21/2/3) [(e〇-Te)/(e-ne) ]1/2(2-V〇/Te)3/4, 其中 i. 85 · 10·1*法拉/公分者係自由空間之霣容率， eV者係假定一麥克斯韋公布之平均霣子醞度， ♦ 10〃 C·3者係在粼近護罩之大*霣滎中之平均 霣子密度 本呔乐尺度適用中US家標ϋΜ CM、洛、 n I ^^^^1 1. ί - -1 ^m— If l^n« mu (請先閱讀背面之注意事項再填寫本頁) 40 S00692 A7 B7 五、發明説明（37 ) e = 1.6022 · 10_13庫侖者係霣子霣荷，Μ及 L = 300伏特者係直滾«Κ «越此《縈護罩者。 将前述各值代入為s之等式中產生： s = 0.04公分， 因此，《漿護箪厚度僅係晶片至II板距離之一棰小分數， Μ及因此沒有頂部和底部護罩相交接之危險。 有磨tag麵少昍坑銮值供一半雇«窗□霣fig用，射*8功蓮 可1&gt;2»饪赛《蚝楢谰_其而»合 爲了要確定半導黼窗口之阻抗率值之範圃，俥使慼應 射頻磁場係以較低衮減耗損通過其而耩合者，留口之厚度 必須灌擇，射頻感《磁場之頻率必須S擇，W及射頻集* 深度對S 口厚度之最小比率I*必須指定。在第一範例中， 此留口厚度係τ = 0.0254米，此射頻頻率f係2 · 106s-1，Μ 及射頻集虜深度對苗口厚度之最小比率係《* = 5,對此第一 範例而言*為半導黼苗口之最低阻抗率係假定下列情形而 計算， 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) μ = 4ττ . 1〇-7享利/米者係半導黼窗口之磁容量， s = r.T係半導覼窗口内射鑕感«磁壜之集虜深度。此最 小阻抗率Γ &amp; «係《後以下列等式計算 厂滅in = S2 ♦ π ·ί·μ 将上述指定值代入此一等式中，爲此一第一範例之最小阻 抗率偽： Γ ·» η = 12.735 Ω -c鼸 下一步，最高阻抗率必須為此第一範例計算。為下文 表紙乐又度遑用中國困家埭拿：css &gt; \4规洛.：：!〇 &lt; 公廣） ,, -41- 嫂濟部中央標隼局員工消费合作社印製 A7 B7 五、發明説明（38 ) 分折之目的，吾人将假設有一接地平面傳輪至在半導醱苗 口之後面之射頻感臛磁場。射頻霣漿負載阻抗之實數 部分必須界定，可接受之耗損L必須界定，Μ及半導醴窗 口之有效《槳柑互作用直徑d必須界定。在此一第一範例 中，射頬《8«漿阻抗之實數部分係： R = -25 ， 可接受耗損（100% = 1時正常化）係 L = 0.01 » 半導髏留口之有效II漿相互作用直徑係 d = 0.318，自此可計算有效電漿互相作用E A係爲： A = π (d/2)2 此最大阻抗率Γ·*·«係由下列等式求得： Γ oaic = L · R ♦ A/T 将前述各值代入此一等式則產生： Γ 78.172 Ω-c· 因此，在此一第一範例中，半導驩之霣阻率可置12.735 2-&lt;^和78.1722-1之間之範臞内任何地方。 在一第二範例中，此半導鼸《口厚度係Μ — 10之因歟 減小，因此Τ = 0.00254米。在此一情沿下，Γ βΙη係減小 至0.127 2-&lt;:騰而厂1^»«則增大至781.719 2-&lt;;·。 在一第三範例中，第二範例之參數係重覆，但以射頻 感應磁場之頻率係滅小至100千鶬茲（f = 0.1· ΙΟ·^·1〉一 項除外。在此一情況下，「&gt;|„偽減小至〇.〇〇6 2-&lt;：1«，而 厂·4Χ係不變（自第二範例〉仍為781.719S2-C，。 本纸張&gt;01適;ίΐ中ϋ國家捸i CNS ) _-\杉义咯：：〇 * (請先閱讀背面之注意事項再填寫本頁) 裝- 、-&amp; 42 經濟部中央標準局員工消资合作社印製 A7 B7 五、發明説明（39 ) 在一第四範例中，第一範例之參數係被採用，但射頻 感應磁場之頻率係增加至10兆薷茲（f = 10· 1041)—項 除外。在此一情況下*「《11(係增大至63.675殳-(：*，然 Γ 減小至78. 172Ω -c·，因此，與其他範例柑比較其 範圍則有幾分變得決窄。 因此，霣阻率值之有用範圍係很廣泛。如果此半導體 留口係一2.64公分厚硅板以及感應磁場之射頻頻率係2兆 鎗玆時，那麽，較佳電阻率係30 Ω -c·。 本發明之其他較佳實施例： 雜然硅頂板110在第1_之較佳實施例中係接地，但 在第4_實施例中自射頻發霣機130之霣力係由基座120和 硅頂板110之間之一功率分裂器160所分裂。為了要提供一 接地回行線路，此邊莹105可以是一接地導電醱。在第5 内，此硅頂板110係由一分開之射頻發霣機165通遇一傳 統式阻抗匹配霣路170自晶片基座120單播地驅動。雖然第 1_之實施例引用一單一線圈作為感®器天線145,但在 第6騙之實施例中此感«線圈145係包含多β (在此一情 況下為甬籲）單《驅動之線圈*亦即内線圈175置於晶片 中央上面Μ及一外線圑180置於晶片周邊上面。在第6圏 之*現中，此内和外線图175和180係平面同心線圈由分開 之霣赛薄發霣機185，190所驅動。此優點為該沿著室100 之半徑之霣槳變化可Μ藉蘧揮自兩傾射頬發霣檐185，190 之不同功率位_而予以補償。在第6圈實施例之一原型中 ，此内和外線圈各包含9邐轉。一固定之阻抗匹配係使用 表纸乐尺度適用中國國家蜾a: c\s丨Λ-m1,咯：丨.）η»% ^^^^1 ^^^^1 1. .^1 in«·· —Bn fBBB^i · —^n nn 一 ’ 交 、va (請先閱讀背面之注意事項再填寫本頁) -43 - 經濟部中央標隼局員工消費合作社印敦 A7 B7 ___ 五、發明説明（4〇) 並聯和串聯電容器195，200分別連接至内線圈175之輪入 和回行终端，K及並聯和串聯電容器205，210分別連接至 外線圈180之输入和回行终端而獲得。 在一工作實施例中，此電漿源射頻發電機155產生2600 瓦於2.0兆赭Η，此偏壓射頻發電機B0產生1600瓦於1.8 兆赫Η，C2FS氣黼係Μ100 cc之氬Μ — 30 seem之速度被 泵晒入室100内，此室壓係保持在6.5 mTorrM及珪頂板110 之溫度係保持在200t。在此等狀況下，此内線圈175之並 1»和串聯電容器195，200分別有8.〖9699毫微法拉和2. 12631 毫微法拉，而外線圈ISO之並腰和串聯電容器205, 210分 別有4.45 5572毫徹法拉和1.0908 5毫撤法拉之電容量。藉 縮短内和外線圈175，180中之一，此其他之轜入阻抗即可 Μ計Λ。其實•以前述電容量係經選擇，此内線圈175之 複阻抗係經計量為5 1 Ω在一 -12度之複式平面角處，以及 外線圈180之後阻抗係經計量為51.8Ω --在-8,6°之複式 平面角處。因此其阻抗接近地匹配此檫準50Ω之射頻發電 機185和190之鑰出。 在第7圖之實施例中，此邊壁105係由一硅邊壁215所 替代，Μ及感應耩合係由一線圈感應醱圍著硅邊壁215捲 撓而提供，並通過此阻抗匹配電路155 _而連接至電漿源發 電機150’。在第7匾内，此硅邊壁21 5係經接地。一如在 第4圜中斷說明之實施例，第8画說明此率分裂器150可 在基座120和硅邊壁2 15之間分裂自«歷發生器130之射頻 功率。一如第5圖中之實施例，第9鼸頭示此硅邊壁215 各纸張尺.度連月中^國家漂丨I，' \4規/S· . 丨V 公降； ^nv fm^i v( I HMtm§ m mil nf— — an-* 0¾. 乂'3 (請先閲讀背面之注意事項再填寫本頁) 44 - A7 ^09692 B7 五、發明説明（41 ) (請先閡讀背面之注意事項再填寫衣頁) 如何可Μ單獨地由分開之射頻發生器165通過此匹配霣路 170賦能。第10_顯示第1圖之硅頂板110及頂上線圈天線 14 5如何可以與第7 _之珪邊壁215和邊線圈天線220相结 合。第11圈說明第8_之功率分裂器如何可Μ被引用於第 10_之實施例中以便在邊壁21 5和基座120之間分裂來自福 壓發生器130之功率。第12_說明第9 _之實施例之具有 頂上線圈天線145者和第1圈之硅頂板Π0之结合。 經濟部中央標隼局員工消費合作社印製 第13Α，13Β，13C和13D1I分別說明第1，4，5和6圖之 實施例之變更式，其中，此平面硅項板U0和平面感矇線 圈天線145業已由一_頂形硅頂板230和一圔頂形線圈天線 235所分別取代。在一實現中，此圖頂形線圈天線235係以 一蠼旋式地捲撓。第14画說明一實施例，其中此矚頂形線 圈天線235自靠近圃頂形頂板230之頂部處伸展，並通遇圔 頂形頂板230之底部Μ園著邊S 105捲撓。在此一情況下， 至少該由線圈天線235之底部分所包鼷之邊壁105之部分一 定曹是非導霣龌之諸如石英或者一半導體之諸如硅者。第 15圏說明一相酋於第10圓者之實施例，其中此篇平硅頂板 110和牖平線圈天線145係由第13Α_之鼷頂形硅頂板230和 醒頂形線圈天線235所取代。 第16漏說明一分裂器250如何可Μ被醮用來在置於第6 鼷之硅頂板110上面之内和外»圈天線175，180之間分裂 來自«漿源射頻發霣檐150之功率。一棰射頻功率分裂器 係吐»於授予Co 11 i ns等人之美鼷專利案第5 , 349,313號中 。一如在Colli ns等人之待審專利申請案由上文引介作為 本纸張疋度適$中·US家嘌隼：: A4W,咯.2!1) 1 45 經濟部中央標隼局員工消費合作社印製 Λ7 B7 五、發明説明（42 ) 參考者，一控制器260可在内和外線圈天線175，180之間 變化功率比，以為晶Η中央上面之霣漿離子密度和晶片周 邊上面之«漿離子密度之間之差異作彌浦。第17Α圔說明 一相當於第15_者之實施例，其中此功率分裂器250在邊 線圈220和圔頂形頂上線圈235之間分裂來自霣漿源發電機 150之射頻功率。第17Β_說明一實施例Μ此鼷頂形硅頂板 230有一内（上部）圓頂形線圈270和一外（下部 &gt;圔頂形線圈 280。此功率分裂器250在内和外國頂形線圈270，280之間 分裂來自霣漿源發電機150之射頻功率，此第17Β圖之硅頂 板230和晶片基座120亦可依照第13Α，13Β或13C團之實施 例中之任一傾而連接。第18園頫示此功率分裂器250如何 可在第10圈之頂上線圈天線145和邊線圈天線220之間分裂 來自霄漿猓射頻發霣檐150之功率。 第19圏說明此功率分裂器250如何可在頂上線圈天線 14 5和硅頂板110之間分裂來自電漿源射鑕發《機150之功 率。在第19·之實施例中，此晶片基座120可抑或接地者 係通過此阻抗匹配電路〖35而連接至鴒壓射頻發«機130。 第20國說明此功率分裂器250如何可在頂上線圈天線145和 晶片基座120之間分裂來自射頻發生器150之功率。在第20 之實施例中，此硅頂板110可以是接地仲或可通過此匹 配霄路170而連接至分開之射頻發《櫬165。第21·係一相 當於第19·者之實施例，但引用此圔頂形硅頂板230和圚 頂形»圈天维235Μ取代第19_之皤平硅頂板Π0和此平面 線圈天線145。第22圈係一相酋於第201中者之實施例， 本纸浪尺度適用中S画家漂苹；CNS * Α4汊詻 (請先閱讀背面之注意事項再填寫本頁) 装. 訂 46 經濟部中央標準局員工消費合作社印梵 A7 B7 五、發明説明（43 ) 但引用圓頂形硅頂板230和圔頂形線圈天線235M取代第20 園之雇平硅頂板110和平面線圈天線145。 第23_說明一實施例，其中此硅頂板110和晶片基座 120各係為另一 β之射頻接地回行。此頂板和基座110，120 係通過各自之射頻絕緣濉波器3 10, 315由各自之射頻頻率 fdaf*之各自之»立射頻發霣機300，305，通過各自之阻 抗匹配電路280 * 290而被喱動，並係通過各自之接地射頻 濾波器320 * 325而各連接至接地線。此絕緣濾波器310， 315防止射頻能自射頻發生器300，305之任一届之到達另 一籲。此接地射頻濾波器320, 325容許頂板和基座110， 120之每一健回行*使由另一個播越室100幅射之射頻功率 接地線。在同一時間，此接地射頻濾波器320 , 325防止應 用於頂板及基座110，120之任-值之射頻功率之係直接地 短路至接地線。特別是，此絕绪濾波器310連接於硅頂板 11〇和。頻率之射頻發霣機300之間者，在頻率6時傳送功 率而在頻率f*時阻擋射頻功率。此絕续濾波器315連接於 晶片基座120和頻率f2之射頻發霣機305之間，在f2頻率時 傅送功率而在頻率h時阻播射頻功率。此接地«波器320 達接於硅頂板110和接地線之間*在頻率“時傳送射頻功 率而在頻率h時阻播射頻功率。此接地濾波器325連接於 晶Η基座120和接地線之間，於頻率！^時傳送射頻功率而 在頻率f*時阻擂射頻功率。 阻抗匹配霣漿280，290係覉本文先前所討論之傅統式 一型，並Μ傳统式方法引用了 «ΙΚ和霣滾察覺器或阻抗匹 本纸張义度適用中國國家標羋.：C\S ' .\4W.咯：：〇 &lt;Rslab / Re (z) = 0.096 / 24 = 0.004, which is a very small score. Therefore, a silicon board is inserted into the RF return route of the RF bias κ hair dryer 130, and only a negligible amount of resistance is added. Xue Xiong's first 眳 霣 "rust awakening pseudo-foot _ earth molybdenum ringworm free top plate There is a shield between the wafer and the wafer, and the ion density crosses the shield and the ion density value of the plasma falls to zero. If the protection sheet is on the wafer surface and meets the cover at the ceiling of the chamber, there is no "slurry in this chamber." The thickness of the straight cover from the 霣 鍣 荥 is «Du shield thickness, s, which is calculated as follows: s = (21/2/3) [(e〇-Te) / (e-ne)] 1/2 (2-V 〇 / Te) 3/4, where i. 85 · 10 · 1 * farah / centimeter is the free space capacity rate, eV is assumed to be the average fertility incubation published by Maxwell, ♦ 10〃 C · 3 The average bead density in the large * beetle that is near the shroud is suitable for the US standard CM, Luo, n I ^^^^ 1 1. ί--1 ^ m— If l ^ n «mu (please read the precautions on the back before filling in this page) 40 S00692 A7 B7 5. Description of the invention (37) e = 1.6022 · 10_13 Coulombs are mascots, M and L = 300 volts are straight roll «Κ« Over this "Haunting shielder. Substituting the aforementioned values into the equation for s yields: s = 0.04 cm, therefore, the thickness of the slurry guard is only a small fraction of the distance from the wafer to the II board, and therefore there is no junction of the top and bottom shields Danger. There is a tag with a small surface, and the value is less than 50% for half-employed «windows» fig, shot * 8 Kung Lian Ke 1 &gt; 2 »cooking competition" Oyster 氰 谰 _ 其 »To determine the impedance rate of the semiconducting window Value range, if the RF magnetic field of Qiying is matched through lower loss reduction, the thickness of the opening must be selected, the RF induction "the frequency of the magnetic field must be selected, and the RF set * depth pair The minimum ratio I of the thickness of the S port must be specified. In the first example, the thickness of the opening is τ = 0.0254 meters, the RF frequency f is 2 · 106s-1, and the minimum ratio of Μ and RF depth to the thickness of the seedling mouth is "* = 5, which is the first As an example, * is the lowest impedance rate of the semiconducting Hayabusa mouth. It is calculated assuming the following conditions, printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) μ = 4ττ. 1〇 -7Henry / meter is the magnetic capacity of the semi-conducting window, s = rT is the shooting depth of the «magnetism in the semi-conducting window. This minimum impedance rate Γ & «is" the following calculation of the plant destruction in = S2 ♦ π · ί · μ The above specified value is substituted into this equation, for this first example of the minimum impedance rate pseudo: Γ · »η = 12.735 Ω -c. In the next step, the highest impedance must be calculated for this first example. For the following table and paper music, I used the Chinese trapped family dad again: css &gt; \ 4 gauge Luo.::!〇&lt; Gongguang) ,, -41- A7 B7 printed by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs Fifth, the description of the invention (38) For the purpose of subdivision, I will assume that there is a ground plane passing to the radio frequency induced magnetic field behind the semi-conducting Miaokou. The real part of the load impedance of the radio-frequency slurry must be defined. The acceptable loss L must be defined. The effective diameter of the M and the semi-conducting window must be defined. In this first example, the firecracker "8" real part of the impedance of the system: R = -25, acceptable loss (normalized at 100% = 1) is L = 0.01 »Effectiveness of the semi-conducting skeleton II The diameter of the plasma interaction system d = 0.318, from which the effective plasma interaction EA system can be calculated as: A = π (d / 2) 2 The maximum impedance Γ · * · «is obtained from the following equation: Γ oaic = L · R ♦ A / T Substituting the aforementioned values into this equation yields: Γ 78.172 Ω-c · Therefore, in this first example, the resistance rate of the semi-conductor can be set to 12.735 2- &lt; ^ Anywhere between 78.1722-1. In a second example, the reason for this semiconducting lipids is that the thickness of the mouth M -10 is reduced, so T = 0.00254 meters. Under this situation, the Γ βΙη system decreases to 0.127 2- &lt;: Teng Erchang 1 ^ »« increases to 781.719 2- &lt;; ·. In a third example, the parameters of the second example are repeated, except that the frequency of the RF induced magnetic field is extinguished as small as 100 kilohertz (f = 0.1 · ΙΟ · ^ · 1>. In this case Next, "&gt; |" Pseudo-reduced to 〇〇〇6 2- &lt;: 1 «, and the factory 4X series unchanged (since the second example> remains 781.719S2-C ,. This paper> 01 als; ίlzhong ϋ National 捸 i CNS) _- \ Shan Yiluo :: 〇 * (please read the precautions on the back and then fill out this page) Install-,-&amp; 42 Ministry of Economic Affairs Central Standards Bureau employee consumption cooperative Printed A7 B7 V. Description of the invention (39) In a fourth example, the parameters of the first example are used, but the frequency of the RF induced magnetic field is increased to 10 Mz (f = 10 · 1041)-except In this case, * "" 11 (the system is increased to 63.675--: *, then Γ is reduced to 78.172Ω -c ·, so compared with other example oranges, its range becomes somewhat decided. Therefore, the useful range of resistance values is very wide. If the semiconductor opening is a 2.64 cm thick silicon plate and the RF frequency of the induced magnetic field is 2 mega-guns, then the preferred resistance The rate is 30 Ω -c .. Other preferred embodiments of the present invention: The hybrid silicon top plate 110 is grounded in the first preferred embodiment, but in the fourth embodiment, it is from the radio frequency generator 130 The force is split by a power splitter 160 between the base 120 and the silicon top plate 110. In order to provide a ground return line, the edge 105 can be a grounded conductive element. In the fifth, the silicon top plate 110 is driven by a separate radio frequency generator 165 through a conventional impedance matching circuit 170 from the chip base 120. Although the first embodiment refers to a single coil as the sensor antenna 145, but In the sixth embodiment, the sense «coil 145 consists of multiple betas (in this case, Yongyue) single drive coil * that is, the inner coil 175 is placed on the center of the chip and an outer coil 180 is placed. On the periphery of the wafer. In the sixth circle of the present, the inner and outer line diagrams 175 and 180 are plane concentric coils driven by separate splay thin hair machines 185, 190. This advantage is that The radius of the dagger paddle can be compensated by the different power levels of the 185, 190 fired from the two tilts by the two tilts In one of the prototypes of the 6th circle embodiment, the inner and outer coils each contain 9 turns. A fixed impedance matching system uses the surface music scale to apply to the Chinese national a: c \ s 丨 Λ-m1, slightly: 丨.) Η »% ^^^^ 1 ^^^^ 1 1.. ^ 1 in« ·· —Bn fBBB ^ i · — ^ n nn one's delivery, va (Please read the notes on the back before filling in this Page) -43-Ministry of Economic Affairs Central Standard Falcon Bureau Employee Consumer Cooperative Indun A7 B7 ___ V. Description of Invention (4) Parallel and series capacitors 195, 200 are connected to the in-line and return terminals of the inner coil 175, K and The parallel and series capacitors 205, 210 are obtained by connecting to the input and return terminals of the outer coil 180, respectively. In a working embodiment, the plasma-source RF generator 155 produces 2600 watts at 2.0 MHz, the bias RF generator B0 produces 1600 watts at 1.8 MHz, and the C2FS airborne system M100 cc argon M-30 The speed of seem is pumped into the chamber 100, the pressure of this chamber is maintained at 6.5 mTorrM and the temperature of the top plate 110 is maintained at 200 t. Under these conditions, the inner coil 175 is combined with 1 »and the series capacitors 195 and 200 have 8. 〖9699 nanofarads and 2.12631 nanofarads respectively, while the outer coil ISO is combined with the series capacitors 205, 210 There are 4.45 5572 milli-farads and 1.0908 5 milli-farads respectively. By shortening one of the inner and outer coils 175, 180, the impedance of the other can be calculated. In fact, with the aforementioned capacitance selected, the complex impedance of the inner coil 175 is measured at a complex plane angle of 5 1 Ω at -12 degrees, and the impedance after the outer coil 180 is measured at 51.8 Ω-in -8,6 ° compound plane angle. Therefore, its impedance closely matches the key output of the 50Ω RF generators 185 and 190. In the embodiment of FIG. 7, the side wall 105 is replaced by a silicon side wall 215, and the M and induction coupling are provided by a coil inductively wound around the silicon side wall 215, and matched by this impedance The circuit 155 is connected to the plasma source generator 150 '. In the seventh plaque, this silicon side wall 215 is grounded. As in the embodiment interrupted in the fourth cycle, the eighth picture illustrates that the rate splitter 150 can split the radio frequency power from the calendar generator 130 between the base 120 and the silicon side wall 215. As in the example in Figure 5, the ninth mannequin shows this silicon side wall 215 paper rulers. Degrees in the middle of the month ^ National Drift 丨 I, '\ 4 regulations / S ·. 丨 V public drop; ^ nv fm ^ iv (I HMtm§ m mil nf— an- * 0¾. 乂 3 (please read the precautions on the back before filling in this page) 44-A7 ^ 09692 B7 5. Description of the invention (41) (please check first (Read the precautions on the back and fill in the clothing page) How can be separately powered by the separate RF generator 165 through this matching road 170. Section 10_ shows how the silicon top plate 110 and the top coil antenna 14 of Figure 1 can be Combined with the 7th LED side wall 215 and the side coil antenna 220. The 11th circle shows how the 8th power splitter can be referenced in the 10th embodiment for the side wall 215 and the base The power from the Fu pressure generator 130 is split between 120. The 12th_illustration of the embodiment of the 9th_ with the combination of the top coil antenna 145 and the 1st circle silicon roof plate Π0. Ministry of Economic Affairs Central Standard Falcon Bureau Employee Consumer Cooperative Print the 13A, 13B, 13C and 13D1I to illustrate the modification of the embodiments in Figures 1, 4, 5 and 6, respectively, in which the planar silicon item board U0 and planar sensing coil Line 145 has been replaced by a top silicon top plate 230 and a top coil antenna 235. In one implementation, the top coil antenna 235 in this figure is twisted in a twist. Figure 14 illustrates one Embodiment, wherein the convective coil antenna 235 extends from near the top of the garden-top roof 230 and meets the bottom S 105 of the roof-top roof 230. In this case, at least the The part of the side wall 105 enclosed by the bottom part of the coil antenna 235 must be a non-conducting one such as quartz or a semiconductor such as silicon. The fifteenth ring illustrates an embodiment of a phase chieftain in the tenth circle, where The flat silicon top plate 110 and the flat coil antenna 145 are replaced by the 13A_top-shaped silicon top plate 230 and the wake-up coil antenna 235. The 16th drain illustrates how a splitter 250 can be used in The power placed on the inside and outside of the sixth silicon top plate 110 between the inner and outer loop antennas 175, 180 splits the power from the «plasma-source radio frequency eaves 150. One RF power splitter system spit» was awarded Co 11 i ns Et al.'S Beauty Patent Case No. 5, 349,313. Just as in Collins et al. The patent application is introduced by the above as the paper with a moderate cost of US medium purine falcon: A4W, slightly .2! 1) 1 45 Printed Λ7 B7 by the Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs V. Invention description ( 42) For reference, a controller 260 can change the power ratio between the inner and outer coil antennas 175, 180 to make the difference between the density of the plasma ion above the center of the crystal H and the density of the plasma ion above the periphery of the wafer. Pu. The 17th embodiment illustrates an embodiment equivalent to the 15th embodiment, in which the power splitter 250 splits the radio frequency power from the engraved source generator 150 between the side coil 220 and the top-shaped coil 235. 17B_Description of an embodiment ΜThe top-shaped silicon top plate 230 has an inner (upper) dome-shaped coil 270 and an outer (lower> sigmoid-shaped coil 280. The power splitter 250 has inner and outer top-shaped coils The radio frequency power from the beast source generator 150 is split between 270 and 280. The silicon top plate 230 and the wafer base 120 of FIG. 17B can also be connected according to any of the embodiments of the 13A, 13B or 13C group. The eighteenth garden shows how the power splitter 250 can split the power from the low-frequency airborne eaves 150 between the top coil antenna 145 and the side coil antenna 220 on the 10th circle. The 19th circle shows the power splitter How can 250 split the power from the plasma source launch machine 150 between the top coil antenna 145 and the silicon top plate 110. In the 19th embodiment, the wafer base 120 can be connected to or grounded through this The impedance matching circuit [35] is connected to the tundrum RF generator 130. The 20th country explains how this power splitter 250 can split the power from the RF generator 150 between the top coil antenna 145 and the wafer base 120. In the embodiment of 20, the silicon top plate 110 may The ground can be connected to a separate radio frequency via the matching road 170. The 165. The 21st series is an embodiment equivalent to the 19th, but citing this top-shaped silicon top plate 230 and top-shaped » Circle Tianwei 235Μ replaces the 19th Zhi flat silicon top plate Π0 and the planar coil antenna 145. The 22nd circle is an embodiment of the one-phase chief in the 201th, this paper wave scale is suitable for the Chinese painter Biaoping; CNS * Α4 汊 詻 (please read the precautions on the back and then fill out this page). Packing. Order 46 Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs Printed Sanskrit A7 B7 V. Description of the invention (43) However, the dome-shaped silicon roof 230 and the roof are cited The coil antenna 235M replaces the flat silicon top plate 110 and the planar coil antenna 145 of the 20th round. 23_Description An embodiment in which the silicon top plate 110 and the wafer base 120 are each another RF ground return. The top plate and the base 110, 120 are passed through their respective RF insulating wave filters 3, 10, 315 from their respective RF frequencies fdaf *, and stand-alone RF generators 300, 305, through their respective impedance matching circuits 280 * 290 Instead, it was moved and passed through its respective grounded RF filter 320 * 325 and each is connected to a ground wire. The insulating filters 310, 315 prevent radio frequency energy from reaching any one of the radio frequency generators 300, 305. The grounding radio frequency filters 320, 325 allow the top plate and the base 110, Each healthy return of 120 * makes the RF power ground wire radiated by another broadcast room 100. At the same time, this grounded RF filter 320, 325 prevents any value applied to the top plate and base 110, 120 The RF power is directly short-circuited to ground. In particular, the clutter filter 310 is connected to the silicon top plate 110. The frequency between the radio frequency generators 300 transmits power at frequency 6 and blocks radio frequency power at frequency f *. The continuous filter 315 is connected between the chip base 120 and the radio frequency generator 305 at the frequency f2, and transmits power at the frequency f2 and blocks radio frequency power at the frequency h. This ground «wave filter 320 is connected between the silicon top plate 110 and the ground line * transmits radio frequency power at the frequency" and blocks radio frequency power at the frequency h. The ground filter 325 is connected to the crystal base 120 and the ground line Between the frequency! ^ RF power is transmitted and the RF power is blocked at the frequency f *. The impedance matching 280, 290 is the first type of the conventional system discussed in this article, and the traditional method refers to ΙΚ and 霣 rolling perceptron or impedance matching paper meanings are applicable to the Chinese national standard .: C \ S '. \ 4W. Slightly :: 〇 &lt;

It in^· ^ —^n kB^^H —HI— m^l a nf If 0¾ 、vi (請先閲讀背面之注意事項再填寫本頁) 47 經濟部中央標隼局員工消費合作社印製 A7 B7 五、發明説明（44 ) 配換能器（钃中未顯示 &gt;以計量實際之轅人阻抗。為了要防 止自兩籲射頻發生器300 , 305之任一催之射頻功率與另一 鏟之阻抗匹配霣路之操作枏干擾，各自之匹配絕緣濾波器 330，335係分別連接於阻抗匹配換能器和至阻抗匹配電路 280，290之換能器_入之間。此匹配絕续濾波器330在對 f t匹配電漿280之_入«於頻率1^時傳送射頻功率Μ及在 頻率時阻播射頻功率。此匹配絕緣濾波器3 35在對“匹 配電路290之輸入處於頻率“時傅送射頻功率Μ及在頻率 時阻播射頻功率。 各棰不同之頻率濾波器310, 315，320，325 , 330， 335可Μ使用眾所熟知之技術建造為被動式霣抗性組件（ 電容器及感應器）。如果此兩個頻率係麇闊地被分 開（例如，以一倍頻程 &gt;，那麼此各種射頻濾波器310，315 ，320* 325 » 330, 335可適當地是离旁通及低旁通濾波器 具有適當地S擇之截止頻率。否則，如果此兩艟頻率fi， h來未充分地被分開時，那麽各種射頻《波器310, 315, 320, 325, 330 , 335應該是帶通或帶阻濾波器集中於適當 之頻率。 第24·說明一柑當於第23麵内者之實施例，但引用第 13 A圖之圓頂形硅頂板230和圔頂形線圈天線23 5M取代第2 3_之脯平硅頂板110和平面線圈天線145。 第25A鼷說明在硅頂板110之上部一邊或背表面上導霣 背部平面400之使用。要臁用於珪頂板110之霣位（例如， 接地線或者，另一方式爲射頻發生器之_出）係直接醮用 nn —in tEflu —一 3^&quot;、v5 (請先閱讀背面之注意事項再填寫本頁) 48 309692 Μ Β7 五、發明説明（45 ) 經濟部中央標準局員X消費合作社印製 --------- 裝-- (請先閱讀背面之注意事項再填寫本頁) 於可導霣之背部平面400，用Μ均勻地橫越頂板110之背部 表面而分布。此背部平面400可Μ是任何离導霣《材料例 如，諸如鋁或網者。此外，此背部平面400必須有足夠之 開口或孔Μ防止由頂上線圈天線145之感醮射頻磁場之爵 霣流之形成，那會阻播射頬感應磁場通遇此背部平面400 之傳輪。例如，第25ΒΗ之俯視画說明該導電钃背部平面 400可以是呈一星之形狀，具有多導霣鐮骛405自導電體中 央410徑向地伸展。較恰酋者，此導霣餹壁405之間之空間 或孔415偽鼷一棰特激性之寬度在硅頂板110之厚度之範圍 上。此一特擻提供均勻之霣滾分配Μ及垂直向之通過硅頂 板110之«滾滾動。第25Β_之寶施例之中央連接之臂可Μ 是適嘗地（為製造之方便起見）Μ_瓷上璺層Μ硅。第25C 函說明導霣黼背部平面400之另一可供選擇方式之實施例 ，它包含外導霣環帶420具有多値導«臀425自導電環帶420 徑向朝内地朝向一虛擬中心酤430伸展。此孔435在導電臂 425之間者係屬一種特徽性之寬度在硅頂板110之厚度之範 圃上* 一如第25C·内所示。較恰當者，霣接觸係沿著整 齒環帘420完成。適酋者，此外導霣環帶420係超越射頻感 暱磁場之有效徑向範圏。 較瘢酋者，此桂頂板爲一 13时（32公分）直徑晶片應係 大約1时（2.54公分）厚，以提供结構之整鼸性以及抗拒較 10為多之向内破裂之安全因數。不遇，要顆着地減小硅頂 板之厚度（例如，至一时之一分數）*第26_說明硅頂板110 和其背部平面400如何地可Μ被结合於一堅固支承基讎500 本泜浪尺度適用中國國冢標革；CM Λ4現咯：：0 &lt;： ：&gt;r f -49 - 經濟部中夬標準局員工消費合作社印製 A7 B7 五、發明説明（46 ) 之諸如一陶瓷画盤者之上。頂上感«線圈天線扣持具147 係放置於基體500之上面。為了要控制硅頂板110之ffl度， 一加熱層510係置於天線和持具147之頂部上，以及一冷卻 板500係置於加熱層510之頂部上。第27圖說明基體500之 角色和天線夾持具147之角色如何地，可以藉應用一堅固 物質諸如陶瓷者，併合入天線夾持具147内之一單一構件 中，並Μ其導霣背部平面400黏合此硅頂板110直接地至天 線夾持具147。 第28圖說明本發明之一實施例之應用另一棰可供選擇 之天線夾持具147’，此夾持具包含一導霣體例如，諸如鋁 或銅。在此一實施例中，一絕緣物質146係装設於感臁線 圈天線145之捲撓和導電天線夾持具147’之間。為了要防 止導電天線夾持具147’之阻擋線圈天線145之射頻感應磁 場，天線145之每一迴轉均窩置於天線夾持具147’中之一 槽形孔550内，各孔550對導電體天線夾持具147’之底表面 147a張開。第28圓之導霄黼天線夾持具147’亦可為硅頂板 110充作導電醱背部平面Μ及為頂板110之堅固支承基體* 在此一慵況時此硅頂板110係直接結合於第28匾之導電體 天線夾持具147’。不過，一較適酋之遘擇係將此星形導電 饑背部平面400置於硅頂板110和第28圈之導電髅背部平面 147 ’之間之中間。第29画說明導霣鼸天線夾持具147’之另 一實施例，此夾持具147’有一對寬团同心環狀孔560，565 ，第6 或lb画之在其中各自一偏内和外線圈天線175 衣纸張足度適刃中a國家漂聲CNS ) \4規咯：！&lt;) κ 公緣It in ^ · ^ — ^ n kB ^^ H —HI— m ^ la nf If 0¾, vi (please read the precautions on the back before filling out this page) 47 Printed A7 B7 by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs V. Description of the invention (44) Equipped with a transducer (not shown in 钃) to measure the actual impedance of the rotor. In order to prevent the RF power from any one of the two RF generators 300, 305 and the other shovel The operation of the impedance matching circuit interferes with each other, and their respective matched insulating filters 330, 335 are connected between the impedance matching transducer and the transducer_IN to the impedance matching circuits 280, 290. This matched continuous filter 330 transmits radio frequency power M when matching input plasma 280 of ft at frequency 1 ^ and blocks radio frequency power at frequency. This matched insulation filter 3 35 when "input to matching circuit 290 is at frequency" Send RF power Μ and block RF power at frequency. Different frequency filters 310, 315, 320, 325, 330, 335 can be built as passive passive components (capacitors and induction) using well-known techniques If the two frequencies are separated broadly (For example, in one octave band>, then the various radio frequency filters 310, 315, 320 * 325, 330, 335 may suitably have cut-off frequencies appropriately selected from the bypass and low bypass filters. Otherwise, if the two fibonacci frequencies fi, h have not been sufficiently separated, then the various RF filters 310, 315, 320, 325, 330, 335 should be band-pass or band-reject filters focused on the appropriate frequency. 24. Describe an example that is in the 23rd plane, but refer to the dome-shaped silicon top plate 230 and sig-top coil antenna 23 5M of FIG. 13 A to replace the second flat silicon top plate 110 and the plane Coil antenna 145. Section 25A describes the use of the guide back plane 400 on the upper side or back surface of the silicon top plate 110. It should be used for the position of the top plate 110 (for example, a ground wire or, alternatively, radio frequency generation器 之 _ 出) is directly used nn —in tEflu —1 3 ^ &quot;, v5 (please read the precautions on the back and then fill out this page) 48 309692 Μ Β7 V. Description of invention (45) Member of the Central Standards Bureau of the Ministry of Economic Affairs Printed by X Consumer Cooperative --------- Packed-- (Please read the notes on the back first (Fill in this page again) On the back plane 400 of the guide canopy, use M to distribute it evenly across the back surface of the top plate 110. This back plane 400 can be any material that separates from the guide, such as aluminum or mesh. In addition The back plane 400 must have enough openings or holes M to prevent the formation of a galvanic current induced by the RF coil magnetic field induced by the top coil antenna 145, which would prevent the transmission of the reflected magnetic field from the back plane 400. For example, the top view drawing of the 25BH indicates that the conductive back plane 400 may be in the shape of a star, with the multi-conducting sickle 405 extending radially from the center 410 of the conductor. More precisely, the space between the guide walls 405 or the holes 415 is a pseudo-exciting width that is within the thickness of the silicon top plate 110. This feature provides a uniform distribution of rolling and vertical rolling through the silicon top plate 110. The central connecting arm of the 25B_ Zhibao embodiment can be tastefully (for the convenience of manufacturing) M_ porcelain upper layer M silicon. Letter 25C describes an alternative embodiment of the guide back plane 400, which includes an outer guide ring 420 with multiple guides «Hip 425 from the conductive ring 420 radially inward toward a virtual center 430 stretch. The hole 435 between the conductive arms 425 is a characteristic width of the thickness of the silicon top plate 110 * 1 as shown in Section 25C. More appropriately, the contact is completed along the ring gear 420. Suitable for chiefs, in addition, the guide ring 420 series is an effective radial range that exceeds the RF induced magnetic field. For scarier chieftains, the top plate of the osmanthus is a 13 o'clock (32 cm) diameter wafer. It should be about 1 o'clock (2.54 cm) thick to provide structural integrity and a safety factor that resists inward rupture greater than 10. If not, it is necessary to reduce the thickness of the silicon top plate (for example, to a fraction of the time) * No. 26_Describe how the silicon top plate 110 and its back plane 400 can be combined with a solid support base 500. Applicable to China's national tomb standard leather; CM Λ4 is now available :: 0 &lt; :: &gt; rf -49-A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Standards and Economics of the Ministry of Economic Affairs V. Invention Instructions (46) such as a ceramic drawing board Above. The top sense «coil antenna buckle holder 147 is placed on the base 500. In order to control the ffl degree of the silicon top plate 110, a heating layer 510 is placed on top of the antenna and holder 147, and a cooling plate 500 is placed on top of the heating layer 510. FIG. 27 illustrates how the role of the base 500 and the role of the antenna holder 147 can be combined into a single member in the antenna holder 147 by applying a strong substance such as ceramics, and its guide back plane 400 Bond the silicon top plate 110 directly to the antenna holder 147. Fig. 28 illustrates the application of another alternative antenna holder 147 'according to an embodiment of the present invention. The holder includes a guide body such as aluminum or copper, for example. In this embodiment, an insulating substance 146 is installed between the coil of the coil antenna 145 and the conductive antenna holder 147 '. In order to prevent the RF induced magnetic field of the blocking antenna 145 of the conductive antenna holder 147 ', each rotation of the antenna 145 is nested in a slot-shaped hole 550 in the antenna holder 147', and each hole 550 is conductive The bottom surface 147a of the body antenna holder 147 'is opened. The 28th round guide antenna holder 147 'can also be used as the silicon top plate 110 as a conductive back plane M and a solid support substrate for the top plate 110. In this case, the silicon top plate 110 is directly combined with the 28 plaque with conductive antenna holder 147 '. However, a better choice is to place this star-shaped conductive back plane 400 between the silicon top plate 110 and the conductive skull back plane 147 'in the 28th circle. Picture 29 illustrates another embodiment of the guide-butterfly antenna holder 147 '. The holder 147' has a pair of wide concentric ring-shaped holes 560, 565. Outer coil antenna 175 clothing paper with adequate blades in a country drifting CNS) \ 4 regulations slightly! &lt;) κ Common

In ml '· ^—^1 ί I nn ml ^^^1 ·1 m In 一 , &quot;-^、va (請先閱請背面之注意事項再填寫本頁) 50 經濟部中央標準局員工消费合作社印掣 A7 B7 五、發明説明（47 ) ，180係窩置。此環狀孔560，565在天線夾持具之底表面 147a處張開因此，沒有射頻感應磁場之被阻擋。在此一實 施例中，一如第28圖，此導霣鼸天線夾持具亦可充作導霣 髏背部平面供硅天線用（取代星形導電《背部平面400)， 並作為供硅頂板110用之強固支承基黼（取代支承基驩500) ，以及因此可直接結合至硅頂板110。不過*較恰當者， 此星形導電鱷背部平面係置於導霣鐮天線夾持具147’和硅 頂板110之中間，並隨硅頂板110結合至天線夾持具147'。 頂上線圈天線145業己如上文所說明者包含一單一同 心螺旋撓组成内及外同心«旋撓组175，180。第30A，30B 和30C圖說明一另一種可供遘擇之設計之頂上線圈天線145 有非同心換組者。特別是，在第30 A園内有一外國形導霣 髏600»它係屬於非常低霄感和低霣阻者，以便能沿箸其 整艢圖周至少是接近原霣位。多個蟢旋導霣鼷610自外導 霄體600呈錯雜路線朝内轘射至接合所有螵旋導霣齷610之 中央點620。《漿源射頻功率（自射頻發霣檐150)係應用於 外導霣醱600和比中央點620之間。一如第30B_中所說明 者，此錯雑蠼旋導霣體610置於一平面中，然而第30C·說 明一另一可供S擇*施例之Μ使用矚頂形頂板230者，其 中此錯雜蠼旋導霣艚610形成一半颺頂。一半園頂形狀， 諸如吐露於本說明害中之各不同實施例内所引用之國頂形 狀者可能是非線性或半球或雄形，或某種弧度曲線之旋轉 諸如一錐形截面，或兩儲不同半徑之結合（如本說明害中 早前吐露者）。 本紙張尺度適!?]中國國家嵊準ί CNS Α4熳咯_ ：!!0 *0&gt;，公毕In ml '· ^ — ^ 1 ί I nn ml ^^^ 1 · 1 m In One, &quot;-^, va (please read the notes on the back before filling this page) 50 Employee Consumption Cooperative cooperative seal A7 B7 V. Description of invention (47), 180 series nest. The annular holes 560, 565 are opened at the bottom surface 147a of the antenna holder. Therefore, no radio frequency induced magnetic field is blocked. In this embodiment, as shown in FIG. 28, the guide-butterfly antenna holder can also be used as a backplane for the guide-bone skull for the silicon antenna (replaces the star-shaped conductive backplane 400) and serves as a silicon top plate The 110 is used for the strong support base (replaces the support base 500), and thus can be directly bonded to the silicon top plate 110. However, if it is more appropriate, the back surface of this star-shaped conductive crocodile is placed between the antenna guide holder 147 'and the silicon top plate 110, and is coupled to the antenna holder 147' along with the silicon top plate 110. The overhead coil antenna 145 has included a single concentric spiral flexure forming inner and outer concentric «rotational sets 175, 180, as described above. Figures 30A, 30B, and 30C illustrate an alternative design of the top coil antenna 145 with non-concentric groups. In particular, in the 30th garden, there is a foreign-shaped guide skull 600 »which belongs to a person with a very low sense and low resistance, so that he can at least approach the original eye position along the whole picture week. A plurality of gyroscopic guides 610 are guided from the outside, and the body 600 is projected inwards to the central point 620 which joins all the gyroscopic guides 610. "Pulse source RF power (from the radio frequency dazzling eaves 150) is used between the outer guide bar 600 and the central point 620. As described in Section 30B_, the staggered spiral guide body 610 is placed in a plane. However, Section 30C describes an alternative top plate 230 that can be used for the S * embodiment. This intricate hybrid guide 霣 艚 610 formed half of the ceiling. The half-top shape, such as the top shape cited in the various embodiments disclosed in this description may be non-linear or hemispherical or male, or the rotation of a certain arc curve such as a tapered cross-section, or two reservoirs The combination of different radii (such as those exposed earlier in this description). The size of this paper is appropriate !?] China National Standards CNS Α4 熳 slightly _: !! 0 * 0>, public

If n ·= 1 III ....... ^ϋϋ HI—— n·— ΐ 〆 (請先閱讀背面之注意事項再填寫本頁) 51 A 7 B7 五、發明説明（48 ) 第31A，31B和31C蹰說明頂上線圈天線之另一非同心 實施例。第31B_相當於平面狀況而第C_相當於圓頂形 狀況。一外圖形導電龌700有多傾弧形導霣醱鹭710自該處 朝内帽射终止於終端715A，715B，715C。一中央點720有 多傾弧形導黼莺730自該處朝外蝙射並终止於终端740A， 740B，740C。如引用於第16_之實施例中者，自第16園之 功率分裂器250之一鍮出之射頻功率係應用於外圔形導體 700和此終端715之間，同時自功率分裂器250之另一 «I出 之射頻功率係«用於中央點720和終端740之間。 感應天線之導體可依循任何適當之三維線路。例如， 第32圏說明線圈天線145之一非平面或三維實施例，包含 5同心國简形蠼旋撓組，亦卽一外鬮筒形螺旋800和一内 圓筒形螺旋8 10均以相同之導躍鼸形成。第33圓說明一對 說明於第32_之雙同心國筒形蠼旋撓组，亦即一内雙同心 國筒形蠼旋撓組810和一外雙同心國筒形蠼旋撓組830可以 被引用作為第16麵之*施例中頂上感應天線之内和外撓組 Μ取代第16圔之内和外平面撓組175，180。 經濟部中央標準局員工消費合作社印策 (請先閱讀背面之注意事項再填寫本頁) 第34·說明第10_之感應天線14 5之另一檯非平面實 施例，包含蠼旋撓組850之*層840a, 840b, 840c。 如本文中前所提及者* 一種因數，它可在晶片中央和 晶Η遇邊非均勻浸蝕先驅氣齷分佈之間對霣漿浸蝕處理差 異给予增大。在氣鼸分佈上之此一非均勻性自晶片基底之 邊通過氣鰻入口 137之氣醱之引進而發生，因此，有較多 浸蝕劑先里氣讎靠近晶片周邊而較少浸蝕劑先驅氣髓靠近 各呔張尺度適用中Sirp票蕈（CNS : Λ4規咯.2!() 緩 52 A7 309692 B7 五、發明説明（49 ) 晶片中央。此一問題係說明於第35A，35B，35C，35D和35E 圈之硅頂板110之實施例中，它包括一中央氣釀進给糸统 建立入硅頂板110内用以引進此浸蝕先驅氣«直接地在晶 片上面呈一以晶片中央爲準之對稱形態。 參看第35D鼷，此1时厚之硅頂板110有一大約0.33吋 深，3. 5时直徑之對穿開口 900在其頂部表面。較適當者， 如第35E画所示，大約22傾對稱位置之0.20吋直徑之孔910 係自對穿開口 900之頂部表面通過大約80%之頂板110之厚 度向下纘。與較大孔910同心之小0.030时直徑孔920係自 硅頂板110之底部表面以激光讚孔。一如第35A和35B·所 示，一圜盤形氣體進给頂930緊密装配於硅頂板110之頂部 表面中之對穿開口 900内。氣驩進给頂930之底部表面有一 大約0.01吋深3.3时直徑之對穿開口 940在其内，它形成一 氣鱧分佈岐管。一中央氣饑進给管950傳送通遇氣饈進给 頂930之中央並開放入對穿開口 940内。氣黼進给頂之底部 周邊角有一限梯960切两在其内，此陏梯960產生一園周形 套，一環狀聚四氟乙烯密封970之有直徑匹配階梯960之直 徑者係緊密装配其内。較恰當者，此聚四氟乙烯密封970 有一 U形截面，一如第35C圈所說明者。一環形鏑絲加強 件97 5於聚四氟乙烯密封970内為密封970提供刚性。 第35A-E圈之中央氣醱進給硅頂板，與由電控制器260 通遇功率分裂器250而控制之單播可調整之内和外感醮線 圈天線175，180相組合，可以引用作為第16圔之資施例中 之硅頂板110。其優酤係在於詼反醮器之中央至邊缘之侵 表纸張尺度適用中SS家埭隼.CN、,\4規咯.210 (請先閱讀背面之注意事項再填寫本頁) 裝. *va 經濟部中央標隼局員工消費合作社印— -53 - 經濟部中央樣準局員工消費合作社印製 A7 B7 五、發明説明（5〇 ) 蝕均匀性係«第35A至35E_之中央氣钃進给硅頂板110所 逹成之横越晶片表面之均勻侵蝕劑先驅氣龌分佈而加強， Μ及任何殘留之中央至邊续之侵蝕非均勻性可Μ藉深思遠 ®之讕整而精確地補償，使用控制器260，以上文提及之 授予Coll ins等人之待審專利申請菜中吐露之方法，使應 用於内和外線圈天線175，180之功率位準成相两比例。其 結果，此晶片中央至邊緣之侵蝕均勻性係經優化至早期技 S所不可能達成之程度而勿須犧牲侵蝕外貌，侵蝕選擇率 以及在非常小之持激大小處之侵蝕速度。 第36 A圈說明中央氣醱進给硅頂板之另一較佳實施例 ，它自霄漿對氣醱進給頂作較佳之保護。在此一寘施例中 ，一肩980係沿蠆硅頂板110内對穿開口 900之圔周邊续提 供。一珪晶片985ί系止在肩980上並分開成為兩艢®別室； 硅頂板110之頂部内之對穿開口 900和氣黼進给頂930之底 部内之對穿閬口 940。此硅晶Η 985有多艟氣體進给孔986 讚穿通遇該處者均係自硅頂板110内氣龌進给孔910俩向地 位移。在此一方法中之硅晶片985之相互定置消除了讓電 漿離子自室經由孔920向上擴散之任何至氣龌進給頂之直 線路徑。此一持激更佳地防護此頂930之由霣漿所攻擊。 此頂930係要就是諸如一半導體之物質，抑或-轚介質， 它不會明顯地減弱射頻感醮磁壜，或者，如果其直徑係小 於感應天線之中央空白之直徑時，可Μ是一諸如不锈鏑之 導電黼。 在第35Α至35ΕΜ及36Α_之實施例中，此氣讎進给孔 表氓侏尺度通用中國國家橾铯（CNS ; Λ4規格.2卜).&lt;2，厂公蓍：， * 5 4 - (請先閱讀背面之注意事項再填寫本頁) 裝 、νδ 經濟部中央標準局員工消費合作社印製 Α7 Β7 五、發明説明（51 ) 910，920，係繞著頂板110之中央分群而置。不過 &gt; 在孔 910，920之任一實施例中可Μ是自中央外至周邊地分布。 如果須要時，或者亦可繞著週邊分群而置以取代中央。此 係說明於第36Β圈内，其中此氣腥進给孔910 , 920係撓著 頂板Π0之周邊分佈。 第37 Α圖說明了®用於任何引用一艚平珪頂板110之霣 施例之變更式•諸如 &gt; 例如第1鼸之實施例，其中一棰絕 緣之接地線法拉第屏990係放置於頂上感應天線145和硅頂 板110之中間。此法拉第屏係羼傳統式之一型，其形狀在 第37B·之俯視中有較佳之顯示•並係使用Μ減少自感 應天線145至霄漿之霣容耩合。第38Α圔說明可«用於任何 引用了一半圔頂形硅頂板230諸如例如第13Α匾者之實施例 之一變更式，其中一絕续之接地線法拉第屏940係置於頂 上感*天線145和硅天線230之中間。第38Β_說明相當於 第7至第9酾之有一钃筒形邊半導鼸窗口霣槿215和一圃 筒形邊感®天線220者之一實施例，而Μ此鼷筒形法拉第 屏990’之附加外形置於感®天線220和画筒形半導體窗口 電極215之中間。 第39Α画係一比例圈，說明霣槳侵蝕反應器中本文荊 所說明之元件之較佳配置。第39Β·係一引*於資現頂上 感應天線中之管形導霣鼸之播截面，管之内部容積係用來 泵唧一諸如水之冷卻爾。 每一前述實施例窠已說明為引用半導鼸留之霣連接至 一電位諸如一射頻霣葱或接地者，由是而引用半導鼸窗口 私烺乐尺度適用中國國家埭隼、CW: .,\4規,洛 (請先閱讀背面之注意事項再填寫本頁) 、va -55 - 經濟部中夬橾隼局員工消費合作红印製 A7 五、發明説明（52 ) 作爲電極。不過 &gt; 此一電連接Μ及半導龌窗口作為霣極之 使用係並非必需。事實上，此半導鼸窗可以容許其作霄之 漂浮及聽其未連接以取代係被引用作為霣極。它會勿論如 何提供某種優點即令不必須作用如一霣極。與其他物質（ 例如，石英或鋁）典型地引用於一檁準轚漿反應器内或 靠近其頂板者相比較，一項優點係該半導醱窗口之半導饑 物質（例如*硅）係很少會成為一污染源。另一優點係該 半導鼸窗口係氟之清除器。因此，此半導讎窗口可在同一 時間作用如一屏供感®天線用以及作爲一對氟之清除器兩 者0 任何上文所述實施例亦可藉放置半導體窗口電搔和其 頂上線圈感醮器於室之裡面而作變更。在此一變更式中， 此半導騣窗口電極並非室圃壁之一部分，但寧可窩置於匾 壁之頂板下。對第1，第4至12,第16,第18至20,第23 Μ及第37Α圈之實施例中所引用之一型平面半導髏窗口霣 極言，第40_說明比平面半導臁窗口霣極110和此平面怒 醮天線145在室100之裡面在室頂板106之下並自其分開。 對第13Α至第15,第17Α，第17Β，第21,第22,第24和第 38·之實施例中所引用之此型曲線或半矚頂形半導饉窗口 霣極言，第41Η說明此半圜頂形半導醱留口霣極230和相 一致之感®天線235在室100之裡面室頂板106之下。對一 _简形半導髏窗口如第7至第9圏之實拖例中所引用者言 ，第41Β匾說明一圔筒形半導鼸窗口 230和國简形感醮天線 235’在室100之裡面。 ° n^— f- p - ίκ^— —i «I Λ — ml i^i^ui nfll« —^ϋ—· -» (請先閱讀背面之注意事項再填寫本頁) 56 經濟部中央標準局員工消费合作社印製 A7 B7五、發明説明（53 ) 雖然每一前述實施例之半導釀窗口業已說明爲單片結 構，但依照一變更式，此半導體窗口亦可分段成為多構件 。特別是，在第42和第43漏中，此平面半導體窗口 110’（ 相當於，例如，第1和第40團之平面半導醱窗口電搔）係 包含一中央鼷盤ll〇a和一周邊瓖帶110b包圍圆盤110a並與 其同心。較恰《者，此圔盤ll〇a和環帶I l〇b係羼相同之半 導«材料諸如硅或任何一《上文建議之其他範例性半導鼸 物質。在一實施例中，相闢聯之“中央至邊緣”侵拽性能 係於霈要時U®用不同位準之射頻功率至環帶1 l〇b和國盤 110a而可調整。此係藉應用一單一射頻源150進给一射頻 功率分裂器160之有各自之射頻功率«I出醮用於圖盤ll〇a 和瓖帶110b者而有最佳之完成。此将痛要一第三接頭（例 如，一接地線霣極）•諸如導電醱邊壁連接至射頻地線（ 第42_中未顯示）。例如，如果靠近晶片中央之侵蝕速度 係大於靠近晶Η周邊者時，此射頻功率分裂器160可Μ調 整用更多射頻功率至中央圖盤UOa而比較少之功率至 半導鼸苗口之两邊環帶ll〇b。此外，甚至爲更大之控制在 “中央至邊续”之侵蝕性能上面*第6，第13B，第16或 第17B·之分裂内和外感應天線部分可以輿分裂之半導匾 窗口霣極110a，110b相结合。特別地，第42画說明第16圔 之内和外慼應天線175，180係與半導醱窗口電極之内«盤 110a和外環帶110b相組合。一如第16圏内，此功率分裂器 250有分閭之射頻壓率输連接至内和外想暱天線175，180 之各自之一β。 I II 表 I、1τ (請先閱讀背面之注意事項再填苟本頁) 本紙浪尺度適刃中國國家標逛（CNS，Λ4浞咯.2;〇 公.f ) 57 A 7 B7 五、發明説明（54 ) 第44圈說明一實施例相酋於第42圖者，其中此分裂之 半導體窗口電極係弧線或圓頂形。在第44圖内，此半導窗 口 «極中央國盤110a相當於一豳頂之中央部分*同時此半 導釅窗口電極周邊環帶110b相當於一團頂之外部，以及一 鄰接之圆柱醱在圔頂之画周基座處。第45鼸說明第44圖實 施例之一變更式，其中圈頂之曲線接近地消失，因此此中 央圚盤110a係實際上地爲平面，同時此瓖帶110b實際上是 一圆简形邊壁。 經濟部中央標隼局員工消費合作杜印f- (請先閱讀背面之注意事項再填寫本頁) 雖然為第42至第4 5_之射頻功率分裂之第三接頭要求 業已說明為一接地線之邊壁，但依據另一變更式，此笨三 绱子亦可Μ是半導覼窗口周邊環帶ll〇b，同時此射頻功率 係在半導龌窗口中央圔盤n〇a和某些其他實《，諸如此晶 片基座120者，之間分裂。第46和第47圔說明如何此一後 者變更式分別改變第42和第44圖之實施例。此類變更式實 現於第45_之實施例上產生一相當於第13B·者之實施例 。在第46和第47圏之實施例中，此射頻功率分裂器250有 其射頻功率_出之一連接至半導鼸窗口中央鼷盤ll〇a，Μ 及其另一_出連接至晶片基座120,同時此半導醱窗口周 邊琛帶110b係接地線。 半導體苗口之有效之霣槳相互作用匾亦可被改變以改 變半導艚®口和晶片/晶片基座之有效霣槳相互作用匾。 為此一a域比率有三饀領域： ⑴對稱式：此有效霄槳相互作用區係大約相同（此區 域比率係大約為1 )，因此，晶片和半導讎窗口霄極兩者 58 經濟部中央標準局員工消費合作社印裝 ^09692 Α7 Β7 五、發明説明（55 ) 有相同之電槳射頻霣滾密度和相同之射頻和直潦護皮霣壓 量。 ⑵並非完全不對稱式：此區域比率置於自1至2和4 之間之一周數之範匾，因此，此電滾密度和射頻及直滾護 皮電壓量在較小區域電極處係大於較大區域電極發者，並 Μ在區域比率上之進一步增大而顯蕾地改變。 (¾完全地不對稱式：此S域比率超過2和4之間之一 因數，以及此霣滾密度和射頻及直潦31皮霄壓量Μ進一步 地在匾域比率上增加而未顯著地改變，一種飽和狀態業己 到達。 在此最後情況（亦卽第(¾情況）中，比較大護皮霣Κ 下降，以及射頻電潦密度出現在任一半導體窗口極或晶片 /晶片基座處，論那一個有較小之有效電漿祖互作用區 者。以此一方式昇高射頻霣溁密度和_皮霣»下降一如昇 高應用於其相互作用S係缩小之一元件半導籲留口或晶片 /基座上之射頻《壓一樣地有相同之效果。致於半導鼸窗 口，此一改變影《清除物質之«射入《綦内之速度，並影 響半導鼸霣極之表面上聚合之速度。致於晶H/基座，此 —改變影《處理參數，正常地由匾用之傷S射頻功率上之 改變所影《者，諸如浸蝕速度，侵蝕外貌和侵蝕選擇率。 當調整有兩鶴以上霄極之反鼸器内之有效霣漿相互作 用匾之比率時，此相同之原理可《用。例如，在第23和第 24園之實施例中*實際上有四個《極* »使用在一個頻率 上驅動和在另一頻率上接地線之方法而減少成兩β °每一 本紙浪尺度適用中国國家嘌隹；CNS :44丨1洛' &lt; yr公缝&gt; (請先閱讀背面之注意事項再填寫本be ) .1Τ 59 經濟部中央樣隼局員工消費合作社印製 A 7 B7 五、發明説明（56 ) 對驅動/接地線霄極係分開地分析，具有有相同效果之改 變區比率一如先前聿節中所描繪者。作為另一範例，在諸 如第4至12圓之實施例中，其中一第三霣極之諸如圓简形 邊壁者俤連接至一電位，諸如接地線或另一射頻源，相同 之分折可«用，但除了該接地霉極（例如，圓简形邊壁） 和連接至一射頻功率源之其他接頭之間之接地回行霣滾之 分配係由諸如兩値驅動接頭之間之相位差異以及有效霣漿 相互作用匾域比率等之動態因素所決定Μ外。為了要保持 一正常不變之相位差異於兩饍射頻驅動電極之間，本發明 吐S於由Kenneth S. Collins等人之美國專利案第5,349,313 號中者可Μ引用。 在一對射頻驅動元件之間（霣極或導霣天線）建立一 理想之相位期係之能力可Μ被應用Μ分配射頻功率至該處 。例如，在諸如第16，第17Α，第17Β和第18画之實施例中 *醮用了分段之感«天線部分者*如在兩e分段之天線部 分間之功率分配秦經於上文中說明者係由變化驩用於各自 之天線部分之射頻電壓之量來逢成。不過》功率分配亦可 以藉改變*用於不同天線部分之射頻霣壓之間之相位角度 而予Μ改變。同樣地，諸如第42至第47疆引用分段之半導 體窗口部分之實施例中，如在兩値分段之半導鼸窗口部分 之間之功率分配係經上文說明為係由變人《用於各自之半 導龌窗口部分之射頻電應之量來達成。不遇，功率分配亦 可《改變釀用於不同半導體苗口部分之射頻霣饜之間之相 位角度而予以改變。 表呔張尺度適用中國國家榡隹（CNS : 洛 ϋΐΟ ' 公奄 (請先閱讀背面之注意事項再填寫本頁) 、-'b -60 - 經濟部中央標準局員工消費合作社印敦 A 7 B7 五、發明説明（57 ) 第48A_說明一電漿反應器很像第1圔之霣施例，但 除了該頂上半導體窗口霣極之理念像擴展至一半導體裙部 10 10自一圖盤形半導鼸頂板1020垂直向地向下伸展一項外 ，此裙部1010和頂板1020係藉一霣介質絕緣環1022而相互 絕緣，並構成一全半導腥圏壁界定霣漿於反應器室之處理 區1035内。就像第1圖之實施例，一線圈感應器1040置於 半導黼頂板1020之上面。此裙部1010可Μ是圓筒形。一可 供S擇之琛形半導鼸脚1011與此裙部10 10呈整體地形成者 可自此圈筒形裙部1010之底部徑向地朝内伸展。一軸環 1050自脚1011之徑向朝内邊緣之附近伸展至支承一 S要處 理之晶片106 5之晶片基座1060之附近，窗下一曲折之高寬 高比間陳1051於其間。在一較佳資施例中，此晶片基座 1060包含一靜霣夾頭。麯環1050之一項目的係要限制電漿 環繞基座1060自處理Ε 1035拽漏至泵8»環帶1070至決窄（ 高寬高比）間陳或通道1051，因此，此洩漏之離子在其到 達此唧打環帶1070之前即沿著此通道在壁表面處再组合。 另一特性是該輸瓖1050提供一重叠檑板结構，俾使此間陳 1051提供一婉曲路徑· Μ及洩灑至泵鯽環帶1070之霣漿離 子必須依循此婉曲路徑。此一待擞更增強了間陳1051内洩 漏之電漿離子之再结合。 泵環帶1070係通遇一晶片開缝閬1075而聯接至處理 區1035，並係由一泵1080所排出。為了要減少或防止電漿 通過此两缠閥1075之洩漏，此開缝閬1075有儘可能高之宽 高比以提供最快窄之通道開口，Μ便能加強在開缠閥1075 私紙張疋度逋用中國國家標串·（ CNS ) +\4叱格；2!0 &lt;2W公螫' (請先5?讀背面之注意事項再填寫本頁) -* 61 - 309692 at Β7 五、發明説明（58 ) 之内表面上霣漿離子之再結合。 在第48A·之較佳實施例中，此半導體圍壁1030是此 室之真空邊界。另一可供灌擇方式為此類半導鼸圍壁可以 是被装設在一金譌之真空圍壁内，俾使半導體圍壁本身並 不是真空邊界。此一後者之S擇方式可以有用於本發明之 實施例中由修整現存之早期技S反醮器室來執行。 有若干優黏由第48A圈之金半導鳢處理室園壁所提供 。一項優點係該金半導龌表面圍封此處理區11)35勿須藉累 積聚合物而鈍化，但取代者*可能睡其在霣漿邂理中呈裸 狀。此係因爲電漿和半導醱表面之間之相互作用並不產生 對晶片之霣赛廉理有傷害性之產物。取代者，Μ由電漿與 園封此處理區1035之半導體表面之相互作用所產生之產物 趨向於揮發，並係随時可由泵〖080泵晒排出。由於沒有需 要來鈍化圈封此處理匾1035之表面，故沒有需要來干擾反 應器操作而淸潔逭些表面，此係一顯箸之優點。 經濟部中失標準局員工消費合作社印取 -----.:¾-----.一5 (請先閲讀背面之注意事項再填寫本S ) 有兩種方式來防止聚合物之累積在圍封此處理區1035 之表面上。一種方式係保持疸些表面高於聚合物凝結溫度 。為此一目的，此頂板1020和裙邊1010係Μ諸如一半導體 之比較离導熱物質製成。另一可供逋擇方式爲此材料勿須 是一半導鼷，但可以是一諸如気化硅，氮化鋁，石英或氧 化鋁等之霣介質。在引用了半導醱材料之一較佳貢施例中 ，此一材料係硅，雒然其他半導鳢材料諸如碾化硅亦可引 用。硅係為包含硅化學用（諸如二氧化硅侵蝕）之霣漿處 理較爲適宜。此係因為硅窗口 1030侵蝕在此一程序中Μ晶 本纸伕又度遙用中囡國家#技（CNS } A4見洛：：0,&lt; ) 62 經濟部中央標隼局員工消費合作社印製 Β7 五、發明説明（59 ) 片上之侵蝕速度爲準而言係非常级慢（自硅圍壁表面所侵 蝕之硅大約3埃（A&gt;對自晶Η所侵蝕之二氧化硅之lw) 。因此，大約35000個晶片在一顯著置之材料（例如1毫 米）係自硅圍壁1030被侵蝕之前可Μ被處理。由於侵蝕半 導鐮圍壁1030之厚度之可容許之耗損係由兩項因素所限制 :(a&gt;圍壁103Q之厚度需要結構之整體性，Μ及（b)厚度上 之改變很明顯地改變了自線圈天線進入室内之射頻耩合。 吾人相倍，少於10%之厚度上之改變，如果在此一說明書 中以上文所指定之半導饉材科其逸擇之指導大網係如下時 ，將不會產生足夠Μ影響晶Η之處理之射頻耩合上之明顯 改變。 對鋁或聚硅電漿侵蝕處理言，它包含氮化學物，此硅 壁可能太快速地侵蝕（耽視基礎電漿邃理參數係如何予以 控制而定），並因此，硅或半導鼸材料不是爲此類用途之 最佳材料。不過，半導《材料在執行本發明上係並非必須 (除非霣或射頻霣係要臁用於該處），以及任何適用之耐 久非半導龌之諸如«化硅者亦可引用作為處理匾園壁1030 0 為了要保持半導鼸頂板1020之溫度於一蓮定之溫度上 (例如，用Μ防止聚合物之澱稹），一·溫度控制糸統，要 就是引用直接熱接觸抑或間接熱接觸者，亦可引用。在此 附矚中，引用間接熱接*之一溫度控制系統係經說明，並 包括一加熱器層1110在頂板1020上面園封此線圈感應器 1040之一絕续層m2之頂部上，並《 —熱阻空氣間隙1114 衣呔沬尺度適用中國國孓蜞华（CNS、洛Hkb. &gt;厂公绛； (請先閱讀背面之注意事項再填寫本頁) 裝· 63 - A7 309692 B7 五、發明説明（60 ) 而自其分開。此加熱器層1110含一傳統式霣加熱元件（第 48A圏之附中未顯示），同時冷卻板1120有内部水冷套 1122。由冷卻板1120所提供之冷卻置係較足夠Μ抵銷頂板 1020之任何霣漿熱更多，同時加熱器層係具有能力提供之 熱置係較足夠以抵銷自冷卻板1120之冷卻更多。一傳統式 溫度感澜/控制器（第45Α圖之附園中未作顯示）操控滾 在加熱器層11 [0之電阻加熱元件中之霣滾量。 爲了要保持半導醱裙部1〇1〇之溫度在一s定a度（例 如，用Μ防止聚合物之澱棟），一半導醴控制条統引用了 要就是直接熱接觸抑或間接熱接觸者可以臞用。在此附匯 中* 一溫度控制条統引用直接熱接《者係經說明，並包括 一加熱瓖m〇A通過一選擇性之絕緣層（並非絕對需要者 )1112A而包圍此裙部1010並與之接«。一逸擇性絕缠層 亦可放置於冷瓖1120a和裙部10丨0之間。此加熱環U10A含 一傳統式«加熱元件1110B，同時此冷環1120A有内部水冷 卻套1122A。由冷環1120A所提供之冷卻量係較足夠以抵銷 裙部1010之任何霉漀熱更多|同時該加熱環係具有能力提 供之熱量係較足夠Μ抵銷自冷瓖1120 A之冷卻之量更多。 一傳統式灌度感澜/控制器（第48A圏中未作顯示）操控 滾在加熱層之霄阻加熱元件中之霣流量。 防止聚合物澱積在園封處理S 103 5之表面上之第二種 方式係對逋些表面«用充分強度之射頻電勢，以自霣漿之 離子增強逋些表面之離子撞擊。此離子«擊功率必須是足 夠以自表面移除聚合物較其澱積更快速。為此一目的，此 本紙法义度遗用中國國家嘌准（C S : Λ 4規格：i〇 « ^ t ---- I i n I - - I - - I T I n I ___I L (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作杜印裝 64 經濟部中央標準局員工消费合作社印製 A7 B7 五、發明説明（61 ) 圔盤形頂板1020和臞简形裙部1010必須是充分地導霣齷以 作用如供應用射頻功率之電極。此頃板1020和裙部1010係 適當之半導。不過，它們寧可不®是金靥，因爲金鼷暴露 於處理B中由產物所供给之霣漿會污染室和晶片。半導齷 材料係較導電鼸物霣更適當地供作頂板1020和捃部1010之 另一原因是該導霣材料在頂板1020會防止自線圈感應器 1040之射頻霣漿源功率之傳輪通過此頂板1020。 在一較佳實施例中，防止聚合物澱積之此兩棰方式（ S度控制和一濺射器促進臁用之射頻«在窗口霣極上）係 結合。一射頻霣勢之«用於半導钃園壁1030將促進離子之 撞擊或濺射此表面•有利地減小餺要以防止聚合物累稹在 表面上之表面溫度。例如*此醞度可能自早期技籙中檷準 地霈要Μ防止聚合物累積之大約26510減小至大約lOOt：於 一充分离之傾懕電壓時*因此，本發明可讓反應器變為更 冷而仍同時防止聚合物累積在處理E 1035之表面上。相反 地，半導黼園壁1030之表面》度之昇高有利地滅少襦要以 防止聚合物累積在表面上之離子撞擊功率或濺射。在一範 例中，腯用於半導鼸頂板1020之射頻功率係500瓦在0.1兆 鵷茲時，應用於晶片基座1060之《壓功率係1400瓦在1.8 兆鎗玆時，醮用於線圈天線1040之霣蹂功率係3000瓦於2.0 兆鐮玆時，同時此半導鱺園壁1030之S度係保持在200¾ 。雖然一想®天線呈線圈天線1040之形態者係經引用Μ執 行本發明之此示範性之實施例，但其他天線類亦可引用， Μ及本發明並未限制於線圈天線之使用。 本纸伕尺度遴叼中圉國家墚淮.CNS，Λ4«ί.咯，；：丨丨帑 --------- 裝------訂------^ (請先閱讀背面之注意事項再填寫本頁) 65 A 7 B7 五、發明説明（62 ) 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 一如上文所述，在晶片基座處之霣漿洩漏，係Μ装設 以一轅琛、一高寬高比開口Μ及/或一婉曲通道來防止。 同時，一如上文所說明者，此開缝閥1075係供同一目的用 之高寬离比閬口。此一高寬高比開口不僅包括由軸環1050 置於上面之邊壁基座間隙，而且也包括其他類型之通道， 諸如麾理氣鼸嗅射孔，它自然地阻擂霣漿雛子之洩漏。不 過，此開缝閥1075係必要足夠地大以容纳比半導醱晶片 1065 , Μ及因此對電漿離子通遇該處而洩漏係更易受影響 。爲了要防止霣漿之自處理區1035通過諸如開缝閥1075之 較大孔之洩溻，一本發明之S擇性待性包括霣滎限制磁鐵 ，諸如磁雄環2130, 2135在開缝閥1075之相對邊界®以建 立磁通線横越比開缝閥開口。霄漿離子1¾子或充霣粒子 ，霣接近此開缝閥1075時，經歷一正交於磁通線和正交於 其速度之加速•因此它們自通遇此開缝閥1075路線分岐， 而取代Μ撞擊於開缠閥之邊壁，以便能在其到達泵《環帶 1070之前藉再組合而消除。此将減少離子通遇此開縫1075 之通路之可能性，耽視磁鐵2130, 2 135之磁通董密度•離 子上之充霣以及粒子，其質量和速度而定。使用多磁鐵有 使橫越此孔之磁通量變大而同時使磁通量驂透入室内朝向 晶片1065者變得最小之優點。較癦當者，此磁鐵2130， 2135係充分地強以影響霣漿之大部分離子。例如，此磁鐵 «產生一磁通量密度横越此孔在大約50高斯或更多之範圍 内，耽視霣漿内霣子能置，霣漿離子能•霣橥反釅器室 S和其他霣橐靄理參數而定。例如，橫越此孔之磁通量密 本纸乐尺度適月中國國家嘌龙ί CNS 1 洛 66 A7 309692 B7 五、發明説明（63 ) 度在100高斯和200高斯之間，在越S磁鐵2公分之一位置 處，以大約75¾超遇5·Τ和IOObT之間之反_器室壓範圍， 減少離子鉋和霉流|一電子密度範匾在每立方公分1和5 X 1011霣子之間。此磁雄係適當地被冷卻至loot或至少 極低於其居里匾度、並係藉*例如，使其包袠於一可耐久 材料（諸如糞化硅）中而自電漿離子受到屏陣。磁鐵2130 ，2135之另一可S澤配置将在此一說明書之下文中說明。 此磁鐵2130，2135並不防止中性霣荷根及粒子，包括 中性霣荷形成聚合物之粒子，傳送通遇此開缝閬1075。因 此聚合物可累稹於泵晒環帶1070内。為了要提獲並控制在 泵唧環帶1070内之此類聚合物，泵W環帶1070之内部表面 係保持在極低於聚合物凝结溫度之下之一溫度，Μ便能澱 積通過開缝閥1075排出之聚合物先驅物霣於泵環帶1070 之内表面上。較適當者，此泵Β»帶1070係覆Μ —層可移除 之冷《墊2150諸如鋁，隰極氧化鋁或鋁上霣漿噴霧之硅， 熱縞合於冷沈孔2155。此一特擻之優酤係聚合物累積在泵 β環帶1070之冷墊期2150上保持未受霣漿離子之干擾，係 不會逋受霣漿加熱，並係不可能通受被«射脫離以變成室 1030内之瘸散污染。因此，此聚合物可以容許在其造成室 之污染之任何危險之前在冷墊襯2150上眾積至一較大厚度 。其結果，此冷墊級2150勿須按期淸理或更換，除了在使 用很久以後外*此係一項顯著之優黏。此冷墊？《 2150也許 並不霈要，由於聚合物澱積速度係如此地低，使聚合物累 稹於泵89環帶表面中可能在30000至40000多傾晶片業己在 ^ 私衣 訂 (請先閱讀背面之注意事項再填芎本頁)If n · = 1 III ....... ^ ϋϋ HI—— n · — ls 〆 (please read the precautions on the back before filling in this page) 51 A 7 B7 V. Description of Invention (48) 31A, 31B and 31C illustrate another non-concentric embodiment of the overhead coil antenna. The 31st B_ corresponds to the flat condition and the C_ corresponds to the dome shape. An outer pattern conductive chick 700 has a multi-inclined arc-shaped guide owl 710 from where it shoots toward the inner cap and ends at terminals 715A, 715B, 715C. A central point 720 has a multi-inclined arcuate warbler 730 shoots outward from there and terminates at terminals 740A, 740B, 740C. As cited in the 16th embodiment, the RF power from one of the power splitters 250 in the 16th garden is applied between the outer sigmoid conductor 700 and the terminal 715, while the power splitter 250 Another «I out of the RF power system» is used between the central point 720 and the terminal 740. The conductor of the induction antenna can follow any suitable three-dimensional circuit. For example, the 32nd circle describes a non-planar or three-dimensional embodiment of the coil antenna 145, including 5 concentric simplifications, and an outer cylindrical spiral 800 and an inner cylindrical spiral 8 10 are the same. The guide leap formation. The 33rd circle shows a pair of double-concentric Chinese tube-shaped screwdriver groups described in No.32_, that is, an inner double-concentric Chinese tube-shaped screwdriver group 810 and an outer double concentric Chinese tube-shaped screwdriver group 830 The inner and outer bending groups M of the overhead induction antenna cited in the 16th embodiment of the * replace the inner and outer planar bending groups 175, 180 of the 16th circle. Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) 34. Explanation 10_Induction antenna 14 5 Another non-planar embodiment of the induction antenna, including 蠼 跼 组 850 The * layer 840a, 840b, 840c. As mentioned earlier in this article * A factor that can increase the difference in the etching process of the magma between the center of the wafer and the distribution of the precursor erosion of the non-uniform etch precursor on the edge of the crystal H. This non-uniformity in the distribution of gas mules occurs from the edge of the wafer substrate through the introduction of the gas eel at the gas eel inlet 137. Therefore, there are more etchants, and the gas choke is closer to the periphery of the wafer and less etchant precursor gas. The medulla is close to each of the scales and is suitable for the Sirp ticket (CNS: Λ4 regulations. 2! () Slow 52 A7 309692 B7 V. Description of the invention (49) the center of the chip. This problem is explained in the 35A, 35B, 35C, In the embodiment of the silicon top plate 110 of the 35D and 35E circles, it includes a central gas feed system built into the silicon top plate 110 to introduce this etching precursor gas «directly on the wafer, which is subject to the center of the wafer Symmetrical shape. Refer to Section 35D. At this time, the thick silicon top plate 110 has a depth of about 0.33 inches, and a diameter of 3.5 hours. The opening 900 is on the top surface. The more suitable, as shown in drawing 35E, is about 22 The 0.20-inch diameter hole 910 in the symmetrical position is splayed down from the top surface of the through opening 900 through about 80% of the thickness of the top plate 110. The 0.030-diameter hole 920, which is concentric with the larger hole 910, is from the silicon top plate 110 The bottom surface of the bottom is praised by laser. Just like the 35A and 35B , A disk-shaped gas feed top 930 is tightly fitted in the counter-opening 900 in the top surface of the silicon top plate 110. The bottom surface of the gas-feed top 930 has a counter-opening 940 with a diameter of about 0.01 inches deep at 3.3 Inside, it forms an air distribution manifold. A central gas feed tube 950 conveys the center of the gas feed inlet 930 and opens into the opposite opening 940. The bottom peripheral angle of the air feed inlet has a limit The ladder 960 is cut in two, and the ladder 960 produces a circular sleeve. A ring-shaped Teflon seal 970 with a diameter matching the diameter of the ladder 960 is tightly assembled in it. The vinyl fluoride seal 970 has a U-shaped cross-section, as explained in ring 35C. An annular dysprosium wire reinforcement 975 provides rigidity to the seal 970 within the Teflon seal 970. The central gas in the ring 35A-E For the silicon top plate, combined with the unicast adjustable inner and outer inductive coil antennas 175, 180 controlled by the electric controller 260 in conjunction with the power splitter 250, it can be cited as the silicon top plate in the 16th example 110. Its superiority lies in the center to the edge of the counterfeit device The paper size of the intrusion form is applicable to the SS Jiadai Falcon.CN ,, \ 4rule.210 (please read the precautions on the back and then fill out this page). * Va printed by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs-- 53-A7 B7 printed by the Employee Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economic Affairs V. Description of the invention (5〇) Erosion uniformity is formed by the central gas feeding silicon top plate 110 of the 35th to 35E_ across the surface of the wafer The uniform erosive agent is strengthened by the distribution of the pioneer's air. The erosion unevenness of Μ and any remaining center to side can be accurately compensated by the smoothing of Shen Siyuan®. Using the controller 260, Coll mentioned above is granted to Coll The method of disclosure in the pending patent application dish of ins et al. makes the power levels applied to the inner and outer coil antennas 175, 180 in two proportions. As a result, the uniformity of the erosion from the center to the edge of the wafer is optimized to an extent that was not possible with the earlier technology without sacrificing the erosion appearance, erosion selectivity, and erosion speed at very small excitation levels. Circle 36A illustrates another preferred embodiment of the central gas feed silicon top plate, which provides better protection of the gas feed top from the slurry. In this embodiment, a shoulder 980 is continuously provided along the periphery of the opening 900 in the silicon top plate 110. A silicon wafer 985 is fastened to the shoulder 980 and separated into two separate chambers; a pair of openings 900 in the top of the silicon top plate 110 and a pair of openings 940 in the bottom of the air feeding head 930. The silicon crystal H 985 has multiple gas feed holes 986. Those who pass through it are displaced from the gas feed holes 910 in the silicon top plate 110 to the ground. The mutual positioning of the silicon wafers 985 in this method eliminates any straight path that allows plasma ions to diffuse upward from the chamber through the holes 920 to the air feed head. This stimulus better protects the top 930 from being attacked by the mao. If the top 930 is a material such as a semiconductor, or-a medium, it will not significantly weaken the RF induced magnetic field, or, if its diameter is smaller than the diameter of the central gap of the induction antenna, it may be such as Conductive tattoo of stainless dysprosium. In the 35th to 35th and 36th embodiments, the gas cavities feed hole is a common standard of Chinese national cesium (CNS; Λ4 specification. 2 bu). &Lt; 2, Changgong: * 5 4 -(Please read the precautions on the back before filling in this page), installed, νδ Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Α7 Β7 5. Invention Instructions (51) 910, 920, placed around the central group of the top plate 110 . However, in any of the embodiments of the holes 910, 920, M may be distributed from the center to the periphery. If necessary, it can also be grouped around the periphery to replace the center. This is illustrated in the 36B circle, where the gasy feed holes 910, 920 are distributed around the periphery of the top plate Π0. Figure 37 Α illustrates the modification of ® for any reference to the embodiment of a flat flat roof 110 • such as &gt; for example, the first embodiment of the example, in which an insulated ground wire Faraday screen 990 is placed on top Between the induction antenna 145 and the silicon top plate 110. This Faraday screen is one of the traditional types, and its shape has a better display in the top view of Section 37B. It also uses M to reduce the self-inductance antenna 145 to match the shadow of Xiaojiang. No. 38Α 圔 Description can be used for any modification of an embodiment that uses a half-shaped silicon top plate 230 such as, for example, the 13th plaque, in which a continuous ground wire Faraday screen 940 is placed on the top sense * antenna 145 And the middle of the silicon antenna 230. 38B_Description is equivalent to one of the 7th to 9th one of the embodiments of a metal tube-shaped semi-conducting semi-conducting window window hibiscus 215 and a garden tube edge sense ® antenna 220, and this tube-shaped Faraday screen 990 The additional shape is placed between the Sense® antenna 220 and the tube-shaped semiconductor window electrode 215. Picture 39A is a proportional circle that illustrates the preferred configuration of the elements described in this article in the erosion reactor. The 39th section is a guide to the top of the capital. The cross section of the tube-shaped guide ball in the induction antenna. The internal volume of the tube is used to pump a cooling device such as water. Each of the foregoing embodiments has been described as citing a semi-conducting mouse to connect to a potential such as a radio frequency onion or ground, so citing the semi-conducting window window private music standard is applicable to the Chinese National Falcon, CW :. , \ 4 regulations, Luo (please read the precautions on the back before filling in this page), va -55-A7 printed by the consumer cooperation red of the Falcon Bureau of the Ministry of Economic Affairs 5. The invention description (52) as the electrode. However, it is not necessary to use the electrical connection M and the semiconducting window as a pole. In fact, this semi-conducting mule window can allow it to float in the sky and listen to it not being connected to replace the system as being cited as the extreme pole. It doesn't matter how to provide a certain advantage even if it doesn't have to act like a flash. Compared with other substances (for example, quartz or aluminum) that are typically cited in a quasi-pulse reactor or near its top plate, an advantage is that the semiconducting material (such as * silicon) of the semiconducting window It rarely becomes a source of pollution. Another advantage is that the semiconductive semiconductor window is a fluorine scavenger. Therefore, the semiconducting window can be used at the same time as a screen for the sensor ® antenna and as a pair of fluorine scavengers. 0 Any of the above-mentioned embodiments can also be placed by placing a semiconductor window electrically scratched on top of the coil The device is changed inside the room. In this modification, the semiconducting window electrode is not part of the wall of the room, but it is better to nest under the top plate of the plaque wall. For the first type, the fourth to the 12, the sixteenth, the eighteenth to the twentyth, the twenty-three and the thirty-seventh circle reference examples of one type of plane semi-conducting skull windows, the 40th description is more than the plane semi-conducting The window pole 110 and this flat antenna 145 are inside the chamber 100 under the chamber ceiling 106 and separated therefrom. For the 13th to 15th, 17th, 17th, 17th, 21st, 22nd, 24th and 38th examples of this type of curve or semi-atmospheric-shaped semi-conducting window, the 41th note The semi-circular top-shaped semi-conducting retaining electrode 230 and the corresponding sense® antenna 235 are inside the chamber 100 under the chamber ceiling 106. For a simple-shaped semi-conductor window as quoted in the examples of the 7th to 9th real drag cases, the 41B plaque illustrates a narrow cylindrical semi-conductor window 230 and a Chinese-style shape-sensing antenna 235 'in the room 100 inside. ° n ^ — f- p-ίκ ^ — —i «I Λ — ml i ^ i ^ ui nfll« — ^ ϋ— ·-»(please read the precautions on the back before filling this page) 56 Central Standards of Ministry of Economic Affairs A7 B7 printed by the Bureau Staff Consumer Cooperative V. Invention description (53) Although the semi-conducting brewing window of each of the foregoing embodiments has been described as a monolithic structure, according to a modification, the semiconductor window can also be segmented into multiple components. In particular, in the 42nd and 43rd drains, the planar semiconductor window 110 '(equivalent to, for example, the planar semiconducting window of the 1st and 40th regiments) contains a central disk 11a and a The peripheral band 110b surrounds and is concentric with the disc 110a. More precisely, this disc 110a and the annulus 11b are the same semiconducting materials such as silicon or any other exemplary semiconducting materials suggested above. In one embodiment, the associated "center to edge" drag performance is adjustable when U® uses different levels of RF power to the annulus 110b and the national plate 110a. This is best accomplished by applying a single radio frequency source 150 to feed a radio frequency power splitter 160 with its own radio frequency power for the dial 110a and the belt 110b. This will require a third connector (for example, a ground wire and a pole) • Such as a conductive wall connected to the RF ground wire (not shown in 42_). For example, if the erosion speed near the center of the wafer is faster than the one near the periphery of the crystal H, the RF power splitter 160 can be adjusted to use more RF power to the central dial UOa and less power to two of the semiconducting mule seedlings. Side ring with ll〇b. In addition, for even greater control over the "center to edge" erosion performance * The 6th, 13th, 16th or 17th divisions of the split inner and outer induction antenna sections can be split into semi-conducting plaque windows 110a, 110b combined. In particular, the 42nd picture shows that the inner and outer antennas 175, 180 of the 16th antenna are combined with the inner plate 110a and the outer ring band 110b of the semiconducting window electrode. As in the 16th ring, the power splitter 250 has a radio frequency pressure input and is connected to one of the inner and outer antennas 175, 180, β. I II Table I, 1τ (Please read the precautions on the back before filling in this page) The paper size is suitable for the Chinese national standard (CNS, Λ4 浞 slightly. 2; 〇 公 .f) 57 A 7 B7 5. Invention Description (54) Circle 44 illustrates an embodiment as shown in FIG. 42, where the split semiconductor window electrode is arc or dome shaped. In Figure 44, the semi-conducting window «polar central state plate 110a is equivalent to the central part of a roof * and at the same time the peripheral annulus 110b of the semi-conducting window electrode is equivalent to the outside of a dome and an adjacent cylinder At the pedestal of Zhouding's painting. The 45th ram shows a modification of the embodiment shown in FIG. 44 in which the curve of the circle top disappears nearly, so the central disk 110a is actually flat, and the urn band 110b is actually a rounded side wall . The Ministry of Economic Affairs, Central Standard Falcon Bureau employee consumer cooperation Du Yin f- (please read the precautions on the back before filling out this page) Although the third connector requirement for RF power splits from 42 to 4 5_ has been described as a ground wire The side wall, but according to another modification, the stupid scorpion can also be a peripheral band around the semiconducting window ll〇b, and the radio frequency power is in the middle of the semiconducting window slab n〇a and some Other examples, such as the wafer pedestal 120, are split between them. Figures 46 and 47 illustrate how this latter modification can change the embodiments of Figures 42 and 44 respectively. This type of modification is implemented on the 45th embodiment to produce an embodiment equivalent to the 13th person. In the 46th and 47th embodiments, the RF power splitter 250 has one of its RF power outputs connected to the center of the semiconducting window, the other is connected to the wafer base. At the same time, at the same time, seat 120, and the surrounding area of this semi-conducting window is connected with a ground wire 110b. The effective paddle interaction plaque of the semiconductor seedling mouth can also be changed to change the effective paddle interaction plaque of the semiconducting stern® port and the wafer / wafer base. For this reason, the a-domain ratio has three domains: (1) Symmetrical: the effective interaction area of the paddle is approximately the same (the ratio of this area is approximately 1), therefore, both the chip and the semi-conducting window window pole 58 Central Ministry of Economic Affairs Printed by the Staff Consumer Cooperative of the Bureau of Standards ^ 09692 Α7 Β7 Fifth, the invention description (55) has the same radio frequency rolling density of the electric propeller and the same radio frequency and direct skin protection pressure. ⑵ is not completely asymmetrical: the ratio of this area is placed in a range of one week between 1 and 2 and 4, therefore, the density of the electric roller and the amount of radio frequency and straight-roller voltage are greater than the electrode at a smaller area For larger area electrodes, the further increase in M area ratio changes significantly. (¾ Completely asymmetrical: the S-domain ratio exceeds a factor between 2 and 4, and the rolling density and the radio frequency and direct pressure 31 M pressure further increase in the plaque domain ratio without significant Change, a state of saturation has arrived. In this last case (also in case (¾)), the larger protective sheath drops, and the radio frequency electrical density appears at any semiconductor window or wafer / wafer base, On the one who has a smaller effective plasma ancestor interaction zone. In this way, increase the radio frequency density and _ 皮 霣 »drop as if it were applied to its interaction, S series shrink one of the components semi-conducting The radio frequency on the opening or the chip / substrate has the same effect. The semi-conducting sluice window changes the speed of the "clearing substance" into the qi and affects the semi-conducting spine. The speed of polymerization on the surface. Due to the crystal H / pedestal, this-changing the processing parameters, normally affected by changes in the RF power of the plaque used, such as etching speed, erosion appearance and erosion selection When adjusting, there are two cranes with more than two cranes The same principle can be used when the ratio of effective plaques within the interaction is significant. For example, in the 23rd and 24th embodiments * there are actually four "poles" »used to drive and The method of grounding the wire at another frequency is reduced to two β °. Each paper wave scale is suitable for the Chinese national purine; CNS: 44 丨 1 Luo '&lt; yr male seam &gt; (Please read the notes on the back before filling in This be) .1Τ 59 Printed by the Ministry of Economics Central Sample Falcon Bureau Employee Consumer Cooperative A 7 B7 V. Description of the invention (56) The drive / ground line is analyzed separately, with the same effect of the change zone ratio as before Described in the section. As another example, in an embodiment such as the 4th to 12th circle, one of the third electrodes such as a rounded simple side wall is connected to a potential, such as a ground wire or another For the RF source, the same subfolding can be used, but except for the ground mold (for example, the rounded side wall) and the other connector connected to an RF power source, the distribution of the ground return and rolling is composed of such as two The phase difference between the drive joints and the effective phase It is determined by dynamic factors such as the plaque ratio and other factors. In order to maintain a normal and constant phase difference between the two RF drive electrodes, the present invention is based on US Patent No. 5,349,313 by Kenneth S. Collins et al. The number can be cited as M. The ability to establish an ideal phase period between a pair of RF drive elements (dip pole or steer antenna) can be used to distribute RF power to it. For example, in , In the 17th, 17th, and 18th embodiments, * the sense of segmentation «antenna part * is used * as the power distribution between the antenna parts of the two e-segment Qin Jing is changed by the above description The amount of radio frequency voltage used in the respective antenna parts comes together. However, the power distribution can also be changed by changing the phase angle between the radio frequency pressures used in different antenna parts. Similarly, in embodiments such as the semiconductor window portion of the 42th to 47th cited segments, the power distribution between the semiconductive semiconductor window parts of the two-value segment is described above as being changed by The amount of RF power used for the respective semiconducting window window is achieved. If it does not happen, the power distribution can also be changed by changing the phase angle between the radio frequency antennas used in different semiconductor seedlings. The scales shown in the table apply to the Chinese National Falcon (CNS: Los Angeles) (please read the precautions on the back before filling out this page), -'b -60-Employee Consumer Cooperative of Central Bureau of Standards, Ministry of Economic Affairs, India, A 7 B7 Fifth, the description of the invention (57) Section 48A_Describes that a plasma reactor is very similar to the first 霔 霣 embodiment, except that the concept image of the top semiconductor window 霣 极 is extended to a semiconductor skirt 10 10 from a figure disk shape The semi-conducting mullet top plate 1020 extends vertically downwards. The skirt 1010 and the top plate 1020 are insulated from each other by a dielectric insulating ring 1022, and form a fully semi-conducting wall defining the slurry in the reactor chamber. In the processing area 1035. Just like the embodiment of FIG. 1, a coil inductor 1040 is placed on the top of the semiconducting ray top plate 1020. The skirt 1010 may be cylindrical. The guide shank 1011 and the skirt 1010 are integrally formed, and can extend radially inward from the bottom of the ring-shaped cylindrical skirt 1010. A collar 1050 extends from the vicinity of the radial inward edge of the foot 1011 to the support A wafer to be processed 106 5 near the wafer base 1060, the height under the window is high A high ratio chamber 1051 is in between. In a preferred embodiment, the wafer pedestal 1060 includes a static chuck. One of the projects of the curved ring 1050 is to restrict the plasma around the pedestal 1060 from processing E 1035. Leak to the pump 8 »annulus 1070 to the narrowest (height width to height ratio) or channel 1051, therefore, the leaked ions are recombined at the wall surface along this channel before reaching the pumping annulus 1070 Another feature is that the input tank 1050 provides an overlapping pan structure, so that Chen 1051 provides a graceful path during this time. Μ and the spilled ions to the pump crucian belt 1070 must follow this graceful path. This is to be resolved It further enhances the recombination of plasma ions leaking in the chamber 1051. The pump belt 1070 is connected to the processing area 1035 through a wafer slit 1075 and is discharged by a pump 1080. In order to reduce or prevent The plasma leaks through this two-wrap valve 1075. The slit lang 1075 has the highest possible width-to-height ratio to provide the fastest and narrowest channel opening. Μ can enhance the use of Chinese paper in the unwrapped valve 1075. Standard string · (CNS) + \ 4 叱 格; 2! 0 &lt; 2W Gong sting '(please read the back 5 first (Please fill out this page again if necessary)-* 61-309692 at Β7 5. The invention description (58) Recombination of the plasma ions on the inner surface. In the preferred embodiment of section 48A, the semiconductor enclosure 1030 is this The vacuum boundary of the chamber. Another alternative method is that such a semiconducting wall can be installed in a vacuum enclosure, so that the semiconductor wall itself is not a vacuum boundary. Alternative methods may be used in embodiments of the present invention by trimming existing early-stage counter chambers. A number of excellent stickies are provided by the wall of the gold semi-conducted snakehead treatment room in circle 48A. One advantage is that the surface of the gold semiconducting wall encloses the treatment area 11) 35. It is not necessary to passivate by accumulating polymer, but the replacement * may sleep in the nakedness of the beryllium. This is because the interaction between the plasma and the semiconducting surface does not produce products that are harmful to the wafer. Instead, the product produced by the interaction between the plasma and the semiconductor surface in the processing area 1035 tends to volatilize and can be discharged by the pump at any time. Since there is no need to passivate the surface of the treated plaque 1035 with a passivation ring, there is no need to interfere with the operation of the reactor to clean up some surfaces. This is a significant advantage. Printed by the Employee Consumer Cooperative of the China Bureau of Loss of Standards, Ministry of Economic Affairs ----- .: ¾ -----. 5 (Please read the precautions on the back before filling in this S) There are two ways to prevent the accumulation of polymer On the surface enclosing the treatment area 1035. One way is to keep the jaundice surface above the polymer condensation temperature. For this purpose, the top plate 1020 and the skirt 1010 are made of a relatively thermally conductive material such as a semiconductor. An alternative way for this is that the material need not be a semiconductive material, but it can be a dilute medium such as silicon deuterium, aluminum nitride, quartz or aluminum oxide. In a preferred embodiment of a semiconducting material cited, this material is silicon, and other semiconducting materials such as milled silicon can also be used. The silicon system is more suitable for the treatment of maize containing silicon chemistry (such as silica etching). This is due to the erosion of the silicon window 1030. In this procedure, the M paper is used again in the country #CN (CNS} A4 see Luo:: 0, &lt;) 62 The Ministry of Economic Affairs Central Standard Falcon Bureau employee consumption cooperative print Preparation B7 V. Description of the invention (59) The erosion speed on the chip is very slow (the silicon eroded from the surface of the silicon wall is about 3 angstroms (A> lw of the silicon dioxide eroded from the crystal Η)) Therefore, approximately 35,000 wafers can be processed before a significant material (for example, 1 mm) is eroded from the silicon wall 1030. The allowable loss due to the thickness of the eroded semiconducting wall 1030 is caused by two Restricted by factors: (a &gt; The thickness of the surrounding wall 103Q requires structural integrity, and the change in thickness of Μ and (b) obviously changes the RF matching from the coil antenna into the room. I am more than 10 times The change in the thickness of%, if the guide network of the semi-conducting materials division specified above in this manual is as follows, it will not produce enough RF to affect the treatment of the crystal H. The obvious change. For the erosion treatment of aluminum or polysilicon plasma, it includes Nitrogen chemicals, this silicon wall may erode too quickly (depending on how the basic plasma management parameters are controlled), and therefore, silicon or semiconducting materials are not the best materials for this type of use. However, The semiconducting material is not necessary for the implementation of the invention (unless the 霣 or RF 霣 is to be used there), as well as any suitable durable non-conducting materials such as «siliconizers can also be cited as treatment plaque 1030 0 In order to maintain the temperature of the semiconducting mule top plate 1020 at a temperature of one lotus (for example, to prevent the precipitation of polymer with M), a temperature control system, if the direct thermal contact or indirect thermal contact is used, It can also be cited. In this note, a temperature control system of indirect thermal connection * is described and includes a heater layer 1110 over the top plate 1020 to seal the top of one of the continuous layers m2 of the coil inductor 1040 On the "-Thermal Resistance Air Gap 1114 Yi Xie Tu standard is applicable to China Guohua Hua (CNS, Luo Hkb. &Gt; factory public silk; (please read the precautions on the back before filling out this page) installed · 63-A7 309692 B7 V. Invention description 60) and separated from it. This heater layer 1110 contains a traditional type heating element (not shown in the appendix of No. 48A), and the cooling plate 1120 has an internal water cooling jacket 1122. The cooling provided by the cooling plate 1120 is relatively Sufficient Μ to offset any heat of the top plate 1020, and the heater layer is capable of providing more heat than sufficient to offset the cooling from the cooling plate 1120. A traditional temperature sensor / controller ( (Not shown in the attached garden of Figure 45Α) The amount of rolling in the resistance heating element of the heater layer 11 [0 is controlled. In order to maintain the temperature of the semi-conducting skirt portion 1010 at a s-degree (For example, use Μ to prevent the polymer from building). Half of the conductive control system is used if it is directly or indirectly thermally contacted. In this attachment * A temperature control system quotes direct thermal connection, which is described and includes a heating element m〇A, which surrounds this skirt 1010 through a selective insulating layer (not absolutely necessary) 1112A and Connect with it «. An optional entangled layer can also be placed between Lengou 1120a and the skirt 10-10. The heating ring U10A contains a conventional heating element 1110B, while the cooling ring 1120A has an internal water cooling sleeve 1122A. The amount of cooling provided by the cold ring 1120A is more than enough to offset any mildew heat of the skirt 1010 | At the same time, the heating ring system has the ability to provide more than enough heat to offset the cooling from the cold urn 1120 A More volume. A traditional irrigation sensor / controller (not shown in Section 48A) controls the flow rate of the roller in the heating element of the heating layer. The second way to prevent the polymer from depositing on the surface of the gardening process S 103 5 is to apply sufficient strength of the radio frequency potential to these surfaces to enhance the ion impact of these surfaces with ions from the pulp. This ion «strike power must be sufficient to remove the polymer from the surface faster than it deposits. For this purpose, this paper ’s legal meaning is the Chinese National Standard (CS: Λ 4 Specification: i〇 «^ t ---- I in I--I--ITI n I ___I L (please read the back Please pay attention to this page and then fill out this page) Employee consumption cooperation of the Central Standard Falcon Bureau of the Ministry of Economic Affairs Du Printed 64 A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs V. Invention description (61) The disc-shaped top plate 1020 and simple skirt The part 1010 must be sufficiently conductive to function as an electrode for supplying radio frequency power. This plate 1020 and the skirt 1010 are suitable semi-conductors. However, they would rather not be gold as the gold is exposed to treatment B The slurry supplied by the product can contaminate the chamber and the wafer. The semiconducting material is more suitable for the top plate 1020 and the stub 1010 than the conductive ball. Another reason is that the guide material on the top plate 1020 prevents The power transmission wheel of the RF power of the coil inductor 1040 passes through the top plate 1020. In a preferred embodiment, the two methods of preventing polymer deposition (S-degree control and a sputter to promote the use of radio frequency «On the window pole" is combined. A radio frequency «For The guide wall 1030 will promote the impact of ions or sputter the surface • Beneficially reduce the surface temperature of the polymer to prevent the polymer from accumulating on the surface. For example * This incubation rate may be accurate from early technology. To prevent the accumulation of approximately 26510 of polymer accumulation from being reduced to approximately 100t: at a sufficiently decanted voltage * Therefore, the present invention can make the reactor cooler while still preventing the accumulation of polymer on the surface of treatment E 1035 Conversely, an increase in the surface of the semiconducting wall 1030 is beneficial to destroy the underlayer to prevent the ions from impinging on the surface of the polymer from impinging on the power or sputtering. In one example, 腯 is used for semiconducting The RF power of the spine top plate 1020 is 500 watts at 0.1 megahertz, which is applied to the wafer base 1060. The "compression power system is 1400 watts at 1.8 mega guns, and the coil antenna 1040's slap power is 3000 watts. At 2.0 megasiliz, at the same time, the S degree of the semi-conducting wall 1030 is kept at 200¾. Although the Imagine® antenna is in the form of a coil antenna 1040, this exemplary embodiment of the present invention is carried out by reference to M, but Other antennas can also be cited, M and the present invention It is not limited to the use of coil antennas. The size of this paper is selected from the national and national level of Huai.CNS, Λ4 «ί. Slightly,;: 丨 丨 帑 --------- installed ------ book ------ ^ (Please read the precautions on the back before filling out this page) 65 A 7 B7 V. Description of the invention (62) Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back first (Fill in this page) As mentioned above, the leakage of the maze at the wafer pedestal is prevented by the installation of a wide opening, a high aspect ratio opening M, and / or a gracefully curved channel. At the same time, as explained above, this slit valve 1075 is a high-width separation valve for the same purpose. This high aspect ratio opening includes not only the gap between the base of the side wall placed by the collar 1050 above, but also other types of channels, such as the sniffer hole of the Qiqilu, which naturally prevents the leakage of larvae. However, the slit valve 1075 must be large enough to accommodate the semiconductor wafer 1065, M, and therefore the leakage system is more susceptible to plasma ions passing there. In order to prevent the leakage of the engraved slurry from the treatment area 1035 through a larger hole such as the slit valve 1075, an optional feature of the present invention includes a limit magnet, such as a magnetic male ring 2130, 2135 in the slit valve The relative boundary of 1075 ® is to establish the magnetic flux line crossing than the slit valve opening. As the plasma ions or particles are filled, when they are close to the slit valve 1075, they experience an acceleration that is orthogonal to the magnetic flux line and orthogonal to their speed. Therefore, they diverge from the route of the slit valve 1075. Instead of hitting the side wall of the unwrapping valve, M can be eliminated by recombination before it reaches the pump "ring 1010." This will reduce the possibility of ions passing through the slit 1075, depending on the magnetic flux density of the magnets 2130, 2 135, the charge and particles on the ions, and their mass and velocity. The use of multiple magnets has the advantage of increasing the magnetic flux across this hole while minimizing the penetration of the magnetic flux into the chamber toward the wafer 1065. In case of more seriousness, the magnets 2130, 2135 are sufficiently strong to affect most of the ions of the maid. For example, the magnet «produces a magnetic flux density across the hole in the range of about 50 Gauss or more, lagging behind the placement of the canopy in the canopy, the canopy ion energy, the cantilever chamber S, and other cantilevers Parameters. For example, the magnetic flux density across the hole is tight, and the scale of the paper is suitable for the moon. China National Dragon CNS 1 Luo 66 A7 309692 B7 V. Description of the invention (63) The degree is between 100 Gauss and 200 Gauss, 2 cm in the S magnet At one location, with approximately 75¾ over the range of the chamber pressure between 5 · T and 100bT, reduce the ion planer and mold flow | an electron density fan plaque between 1 and 5 X 1011 yuan per cubic centimeter . This magnetic male system is properly cooled to loot or at least very low than its Curie plaque, and by * for example, it is wrapped in a durable material (such as fecal silicon) and is exposed from plasma ions Formation. Another possible configuration of the magnets 2130 and 2135 will be described later in this specification. The magnets 2130, 2135 do not prevent the neutral roots and particles, including the particles formed by the neutral charge, from passing through the slit 1075. Therefore, the polymer can accumulate in the pumping belt 1070. In order to obtain and control such polymers in the pump belt 1070, the inner surface of the pump W belt 1070 is kept at a temperature that is extremely lower than the polymer condensation temperature, and M can be deposited through the opening The polymer precursor discharged from the slit valve 1075 is entrapped on the inner surface of the pump annulus 1070. More suitably, the pump B1010 is coated with a removable M layer of cold pads 2150 such as aluminum, aluminum oxide or aluminum sprayed with silicon slurry, and is heat-sealed in the cold sink hole 2155. This special high-quality polymer is accumulated on the cold pad period 2150 of the pump β annulus 1070 and remains undisturbed by the energetic ions. Break away to become lame pollution in the chamber 1030. Therefore, this polymer can tolerate accumulation to a larger thickness on the cold pad 2150 before it poses any risk of contamination of the chamber. As a result, this cold pad grade 2150 does not need to be cleaned or replaced on schedule, except after a long time of use * This is a significant superior stickiness. This cold pad? "2150 may not be important, because the polymer deposition rate is so low, so that the polymer may accumulate in the surface of the pump 89 endless belt may be in the 30,000 to 40,000 multi-tilt wafer industry already ^ private order (Notes on the back and then fill this page)

經濟部中央樣隼局員工消費合作社印U 67Printed U 67 by the Employee Consumer Cooperative of the Central Falcon Bureau of the Ministry of Economic Affairs

AT B7 五、發明説明（64 ) 室内«理之時期内並不霈要移除。 爲了要防止聚合物之累稹在鞴環1050之表面上，此軸 瓖1050之匾度係保持在一選定之醞度，此fi度甚高於以傳 统式溫度控制系统，包括一熱沈孔2170和冷沈孔2175熱稱 合至轴環1050者之聚合物凝结fi度。AT B7 Fifth, the description of the invention (64) Indoor «In the period of rationality, there is no need to remove it. In order to prevent the accumulation of polymer on the surface of the ring 1050, the plaque of the shaft 1050 is kept at a selected incubation degree, the fi degree is much higher than that of the traditional temperature control system, including a heat sink hole The 2170 and the cold sink 2175 are heat weighed to the degree of condensation of the polymer of the collar 1050.

經濟部中央橾糸局RX消費合作社tvIL -- —----- If—— *nn HI n^—*nn *1 (請先閱讀背面之注意事項再填寫本頁) 依據本發明之另一特擻*中央和邊缘氣龌噴射口 2200 ，2210分別在頂板1020之中央和邊续部分内*自»立之氣 驩供輪2220，2225接收霣漿先驅氣鼸。Μ此一特擻，在晶 片中央和晶片周邊之氣餹滾速和氣龌混合可Μ單_儀別地 調整而爲晶片“中央至邊绪”處理非均勻性作精密地補償 。因此，例如，此氣鼸供《1 2220可供给一艟霣漿先驅氣醴 混合物Μ —棰滾速在晶片中央上面•同時此仔醱供輪2225 可供给另一霣漿先驅氣黼混合物Μ另一滾速在晶片周邊上 面。雖然附匾中顯示此氣鼸供纗2220聯接至晶片中央上面 之單一氣齷人口 2220 *多氣體入口置於晶片中央上面或一 淋浴頭式之構形亦可引用以控制晶片中央上面之氣醱滾最 。雖然此附圖顯示此氣腥供_ 2225聯接至多傾氣鼸入口 2210徑向地通遇邊壁或裙部10 10朝向晶片邊緣伸展，但氣 糴供《I 2225亦可取代連接至氣體入口者而朝向晶片邊緣伸 展，要就是通遇頂板1020向下，抑或通過軸瓌1050向上， 以控制晶片邊綠上面之氣鼸滾量。 霣漿源射頻功率係横越線圈接頭2310, 2320而應用於 線圈感®器1040。«Ε射頻功率係通過基座接頭2330而® 用於晶片基座1060。射頻功率或一接地電位係通遇接頭 本紙乐又度過用中1國家橾隼ί CNS ) Λ4哫珞ί D、V公f ; -68 - 經濟部中央樣準局員工消費合作社印繁 A 7 B7 五、發明説明（65 ) 2340而應用於半導鳢圍壁霣極1030 (包括圃盤形頂板1020 和鬮简形裙部1010)。各棰不同方式係吐霉於此一說明書 之上文中用Μ提供供輪至半導體窗口圍壁1030,感應線圈 1040和晶片基座1060等之分開之射頻功率（如，例如第1 ，5，19或23·中所示者），或自只有射頻霣源分裂至各 處之射頻功率（如*例如第4，18，19,或20鼸中所示者 )，其中之任何一檯均可應用於第48Α圈之實施例。此外 ，各棰不同之感臁線圈幾何形係經吐霉於本說明書之上文 中（如所顯示者，例如第30Α，30Β，30C，31Α，31Β，31C ，32 , 33或34園）*其中之任何一棰均可引用Μ實施第48Α 圖之*施例。 因此，第48Α圏之實施例有三掴單播霣極，亦即：（a) 晶片基座160，（b)半導醱頂板1020，以及（c)半導體裙部 1010。每一造些三種“電極”可Μ較有效區内另外兩艏較 大或較小*耽視特殊“霣極”和霣漿之間所要之相互作用 而定。以三屆電極中之一傾以另外兩傾為準之有效匾内之 堆大或滅小，在一傾霣極邂之霣漿離子通量和能量可Μ以 另一霣極為準而分配。待別地，Μ其他電極為準一電極之 有效區上之減小在此一霣極處即增加電漿離子通量和能置 。此将提供另一捶方式來控制一個電極和霣漿之間之相互 作用，並例如可用來在逹成一理想之電極對霣漿相互作用 上缓和射頻«壓功率霈要或S度需要。作為一理想之霄極 對霣漿相互作用之範例，在本發明之一锺棋式中，吾人要 防止物質之澱稹在半導髓圍螢之内表面上係較宜，包括兩 农紙張尺度通用中國國家懔隼；C\S ; .\4叱咯；；：：〇' W公绛、 裝 -T (請先閱讀背面之注意事項再填艿本頁) 69 經濟部中央榡隼局貝工消費合作社印装 A7 ___ 五、發明説明（66 ) 餹半導醱霣極（亦即，裙1010和頂板1020)。藉如此地保 持半導鼷霣極沒有澱積之污染（例如，聚合物先驅），由 於澱積物質之自此霣極脫落之晶片污染ί系可防止，而在同 一時間此電極係任其未被覆蓋以便能使其在霣漿處理化學 中繼續有利地參與。例如，此霣極可以是一含硅物質，Μ 及此霣漿處理可Μ是引用含氰處理氣鱺之氧化硅侵蝕程序 ，在該情況下此霣極提供濺射硅物質進入II漿内以清除氰 。在任何情況Τ *缓和射頻鴒壓功率之霈求或霣極溫度之 霈求可以藉調整在一届霣極處之任何一個，或某些，或所 有下列三餡參數來達成：U)醮用於一届電極之射頻纊壓 功率，（b)—個電極之溫度，Μ及（c) 一艟電極Μ其他電極 之有效Β爲準之有效區。因此，如果吾人希望將電極之一 之S度減至最小，Μ及將«用於一艏霣極之射頻儀壓功率 滅至最小《而同時勿論如何要防止物質（諸如聚合物先驅 )之蹑稹在一艟霣極上，那麼此霣極之有效S可Μ減小以 增加在此一霣極處之霣漿離子通Λ和能置，以便能爲一減 小之霣極瀟度和霣極射頻軀壓功率作補»。Μ此一方法， 有效霣極匾之S擇可在播得一理想之«極和霣漿間相互作 用上緩和射頻鑲壓功和溫度需求。 在第48Α_之實施例中，此線圏感醮器1040亦可分割 成為霣分開之内和外線圈感«器。例如，此一内和外線圈 慼臁器係說明於第52·内作為内和外線圈想«器24 10和 2420。傾別地驅動此類内和外線图感與一半導鼸留口圍壁 相結合之各種方式係吐露於本說明窨之上文中（例如|如 (請先閱請背面之注意事項再填寫本頁) -裝- -- A7 B7 309692 五、發明説明（67 ) (請先閲讀背面之注意事項再填寫本頁) 第6, 16圖中所示），其中之任何一棰均可以引用Μ執行 第48Α圔之本資施例。在一特殊情況下，其中此晶Η對頂 板距離係小時•偭別地控制外天線線圈2420之一優酤係晶 片中央上面之該電漿密度，由於小晶片至頂板距離而是低 於晶片周邊上面者|藉降低用於内線圈感應器24 10者 為準之應用於外線圈感醮器2420之射頻電將源功率而加強 以在晶片周邊上面者為準之此電漿密度。 雖然第48A圈之實施例Μ述處理匾][035钿向地對泵B9 環帶1070，但第48Β國之實施例閜述向下地平行於園筒形 裙部10 10之軸線至泵1080。選擇性之磁鐵環2130a * 2135a 阻擂霣漿之自處理區1035向下洩漏至泵晒環帶。在第48A _之實施例中，為了要進一步地阻播霄漿洩漘，此孔1075 有一比較高之寬离比，俾使洩漏之電漿離子或霣子趨向於 互撞，並係在完成其通遇該處之通路之前被吸收在孔1075 之内表面上。減小霣赛洩漏之另一形態係通過翰環1050和 裙部1010之底之間之開口 1051之婉曲路線。一如附圏中所 示*此軸環1050和裙部1010之底有柑似之重叠陏梯形狀.. 經濟部中央標隼局員工消費合作杜印繁 ..呈重叠播板之形態....它拘束任何霣漿傳送通遇其間以 沿行通過此空陳1051之婉曲路線，藉以增加霣漿與其表面 之撞擊之彩響。 在第48A_中，此國筒形裙部1010係自圔盤形頂板1020 電分離，而兩者各可Μ分別通過接頭2340和2340a而建接 至單《之射頻功率源》此将容許靠近晶Η周邊之霣槳狀況 由®用於接頭2340a之艟別射頻霣勢予以控制，在圖筒形 本纸尜义度適月家螵輩：C\S ' 2ί，）、：尸公t 71 - A7 B7 五、發明説明（68 ) 裙部1010上者由®用於圓盤形頂板1020之接頭2340之射頻 電勢單播地予Μ控制，而應用於接頭2340者趨向於影«靠 近晶片中央之霣漿狀況。半導醱窗口围壁之兩艟霣分開之 部分上控制射頻霣位之各種方式係經吐露於本說明書之上 文中（例如，如第42，46，10，11或12圖内所示），其中 之任何一種均可以引用以執行第48Α圖之實施例。 經濟部中央標隼局員工消費合作社印繁 裝 (請先閱讀背面之';1意事項再填寫本1) 由於裙部1010，頂板1020，和晶片基座1060係極易於 被使用作為單獨之電極，其中之任何一個可Μ其他各値為 準而電接地線，同時未接地線之一個可能Μ相同或不同之 霣源驅動。例如，如第48c麵内說明者，頻率^之第一射 頻霣源30 10係脚接至半導體窗口電極1020，同時濾波器 3020和3030防止在頻率6和f3處射頻功率之回行聯接至一 射頻阻抗匹配鬣路3035。頻率“之第二射頻電源3040係聯 接至半導膿頂板裙部1010,同時濾波器3050和3060防止在 頻率fi$f3處射頻功率之回行W接至一射頻阻抗匹配電路 3065。頬率之第三射頻霣源3070係聯接至晶片基座1060 «同時濾波器3080和3090防止在頻率匕和丨2處射頻功率之 回行聯接至一阻抗匹配霣路3095。第48c_之實施例可Μ 藉讓三傾元件1020，1010或1060之任何一β接地而随意地 予Μ變更。 作爲兩籲分開之硅工件而形成此半導鼸圍壁1030提供 易於裂造之附加優點，而且因係此較蘧宜者。 第49·說明一相當於第48Α_者之實施例 &gt; 除了該裙 部1010和頂板1020並非相互電絕绪以及甚至可形成一單一 本呔永&amp;度適用中國國家樣准；CNS ) Λ4砍咯公皆 經濟部中夹橾隼局員工消費合作社印策 A7 B7 五、發明説明（69 ) 整龌之單石硅工件以外。 第50圖說明此圈盤形半導體頂板1020如何可以分割成 為一内中央園盤部分1020a和一周邊環狀部分1020b，而自 此環狀部分此圔筒形裙部10 10而下伸展。一如在第49圖之 實施例中，在晶片中央之此霣漿狀況和晶Η邊緒之電漿狀 況可Μ分別由臁用於健別接頭2340和2340a之個別射頻镐 壓倍號單播地予以控制。用以控制上文Μ參考第48A圖之 貿施例而提及之半導體窗口圍壁10 30之値別部分之上文吐 露之各種方式之任何一値均可Μ引用以實施第50圏之實施 例。 第5 1_說明此半導體窗口圍壁1030如何可以分割成為 三艢霣分開之部分，包括⑴頂板1020之内園盤形部分1020a ，⑵頂板1020之外環狀部分1020b，以及（3)自壤狀部分1020b 分開之裙部1010。三個傾別射頻倍號可以®用於三傾部分 ，通過接頭2340至内圖盤形部分102(〕a，通過接頭2340a至 裙部1010, Μ及通過接頭2340b至外環狀部分1020b。 第52圔說明第50_之實施例如何可Μ舆單獨之内和外 感®線圈2410，2420相結合，俾箪播地控制在晶片中央和 晶片邊缘之上面之電漿狀況。接頭2430，2435和2440， 2445分別地至内和外想應線圈2410 * 2420者 &gt; 可以由分開 之射頻霣源或由自一共有霣源之分裂之射頻功率來驅動。 Κ能此一内和外感®線圈2410，2420與半導體窗口園壁 1030之分開之驅動部分相结合之各種方式係吐«於此一說 明軎内之上文中（例如，第42，43或46圓内所示）*其中 本紙张尺度遺用中國國家埭窣CVS _ Α·Η?·格· I. ；!:0 &lt;+ I 姑衣 IΓ I訂 (讀先閎讀背面之注意事項再填寫本頁j 309692 A 7 B7 五、發明説明（70 ) 經濟部中央標隼局員工消资合作社印製 之任何一個可以被引用以貢施第52園之實施例。 第53_說明第51_之實施例如何可以與分開之內和外 線圈感暱器24 10，2420相结合。 第54圈說明第48A匾之貢施例如何可以與圍著半導體 裙部1010捲撓之一國筒形邊線圈2610相结合，以一方式模 擬第10闺之實施例中者。電漿射頻源電力係通遇接頭2620 ，2630而豳用於邊線圈2610。較恰當者，此頂線圈1040和 邊線圈2610俤Μ—至少相等於電漿内射頻磁場之集虜深度 之大約兩倍之距離分開。 S擇性地，此線圈感應器1040置於頂板1020之上面者 ，可Μ爲支持邊線圈而免除，模凝第7，8和9圈之實施 例之方式。在此一情況下，僅裙部10 10係須要是一半導體 材料，提供一圓筒形半導醱窗口圍壁10 30 ,同時此頂板 1020可Μ是一絕緣體（例如*像氮化硅）。第7，8或9 圈之技術之任一値用Μ分閭地晒用射頻功率至画简形半導 鼸窗口園壁者，此邊線圈和晶片基座可以引用Μ實施第54 _之實施例。 第55麵說明第48Α圖之實施例如何其半導鼸窗口園壁 1030係分割成爲一頂板1020和一裙部1010*可以與醑著裙 部1010捲撓之鼷筒形邊線圈2610相結合。說明於第10，11 和12圏内之應用射頓功率至分開之頂板部分和頂及邊線圈 感豳器之方式之任一棰可以*用Μ實施第55圖之實施例。 第56匾說明第50園之實施例其半導鼸窗口園壁1030如 何地係被分割成為一内圓盤形部分1020 a和一外環帶部分 I I，一，，口 (請先閱讀背面之洼意事項再填寫本頁) 钇纸張尺度適用由國國家樣隹’C\S : A4現洛：2U) 7 4 - 經濟部中央標隼局員工消費合作社印策 A7 B7 五、發明説明（71 ) 1020b之具有裙部1010者，與撓著裙部1010捲撓之邊線圈 相结合。醮用射頻功率至此分開之頂板部分Μ及頂和邊線 圈感臁器之第1〇，11和12圖内說明之任-種方式均可以引 用以實施第56圈之實施例。 第57圖說明第51匾之實施例其半導鱧窗口圍壁1130如 何係被分割成為一内圖盤形部分l〇20a，一外環帶部分1020b Μ及裙部1010，可以與園著裙部1010捲撓之邊線圈2610相 結合。 第58鼷說明第48 Α匾之實施例之頂板1020如何可以變 更成有一國頂形狀。較蘧當者*此國頂形狀係一多半徑國 頂形*其中圔頂之半徑自邊緣至中央增大。較恰當者但非 必需者，此頂板線圈感醮器1040係與頂板1020之圖頂形狀 一致。同樣地，第59圜說明第49圖之實施例之頂板1020如 何可Μ變更成有一圖頂形。同樣地，第60圖說明第50圖之 實施例之頂板1020如何可Μ變更成有一 _頂形，第61圔說 明第5 1_之實施例之頂板1020如何可以變更成有一圔頂形 ，第62匾說明第52_之實施例之頂板1020如何可Μ變更成 有一鼷頂形，第63圓說明第53匾之實施例之頂板1020如何 可以變更成有一圔頂形，第64画說明第54躍之實施例之頂 板1020如何可Μ變更成有一國頂形，第65圏說明第55圔之 貢施例之頂板1020如何可以變更成有一豳頂形，第66圈說 明第56画之實施例之頂板1020如何可以變更成有一國頂形 ，以及第67·說明第57麵之實施例之頂板1020如何可Μ變 更成有一画頂形。 本纸張尺度遴用中國固家棣準CNS ! .V4規格 ; ；：!0 公t f * .&gt;1 ml 14 &gt; I ml i^iB— m anllv 一 ^ (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印災 A 7 B7 五、發明説明（72 ) 第68圔說明先前與第48A圈之相對磁镦環2130, 2135 相鼷嫌所提及之磁限制形態之第一實施例，在第68A圈内 ，此磁雄環有極终端至终端地定向而與相對磁極相互面向 。在第68B圖内，此相對磁鐵極係邊至邊地定向呈相反之 方向，因此相對一對之磁極係建成直線地並列。在第68C 圖中，此相對磁雄極係沿著斜向之銳角Μ兩値磁鐵環2030 ，2035之間之位移之方向為準而定向。第68D圖和第68Ε圖 分別相當於第68Β和第68C團，惟相同磁極係並列以取代相 反磁極除外。其他配置提供離子自一筆直路線通過此開縫 閥1075或其他較大閭口之所要求之轉向可Μ提供Μ實施本 發明。 雖然第48Α至68C圇之實施例業已參考不同形狀之頂板 和裙部予以說明（亦即，要就是分別為圖盤形和圓筒形， 抑或分別為画盤及圖頂形），它們亦可Μ是相同或不同形 狀由曲線之轉動而形成者，包括半球形，多半徑Η頂形， 圔筒形，錐形，截角錐形或類似形狀。 雖然前文說明已提及旋轉式對稱感醮天缠，但此一天 線並非需要以實現本發明，Μ及比天線可Μ是任何其他形 態之具有感應式地《合射頻功率進入室内之能力者。因此 ，此感應天線，如此一名詞偽引用於本說明書中以及增列 於此之申請專利範_中者，係任何鄰接霣漿之電滾承載元 件，它至少可感臁地耩合射頻功率至霄漿者，並因此不箱 要是一線圈以及更不需要鄰近反醮器室頂板放置，但可以 是鄰接任何其他適雷之位置，諸如室邊壁。事實上，一感 本紙張尺度適用中國1家埭孪（CNS 1 .\4現洛 (請先Μ讀背面之注意事項耳填寫本頁) -5 76 309692 A7 B7 五、發明説明（73 ) 應天線可Μ整個地免除，一如第69圖之實施例中。第69醒 相當於第48Α匯之實施例，其中此感應天線1〇40業已免除 。取代者，射頻功率係電容性地耦合至電漿，例如自一對 霣極包含半導體頂板1020和晶Η基座1060者。 雖然本說明楽己提及«漿限制磁鐵，它係永久磁鐵* 電磁嫌亦可引用作爲霉漿限制磁鐵。 雖然第48Α至68C_之實施例業己參考一霣漿侵蝕反臁 器而說明，但本發明亦可Μ被引用於電漿澱積反®器中， 諸如化學汽相澱積之電漿反應。在此一情況下，此方法可 Μ此一方式資施*即澱積不僅發生在晶Η上，而且亦發生 於室壁上。另一可供S擇方式，此壁可以用充分之射頻霣 力偏Κ，俥使沒有澱積累積於室内壁上，即令當物霣係被 澱積在晶片上時。此将提供一極大之《點，特別是，例如 ，Μ—氣化硅之化學汽相澱積之霣漿反«器。此係因為· 沒有本發明時，此一反應器之内壁必須定期地淸理。此一 淸理操作係很困難•因為二氣化硅侵拽非常慢*邸令在一 含氟之淸潔氧饈中，除非此表面溫度俤甚高於化學侵蝕臨 界S度。 經濟部中央標隼局員工消費合作社印製 另一可供S擇方式，本發明藉引進一清理氣鼸（例如 ，一含《氣《)進入室内，可作用如一處理後自動淸理之 化學片相澱積反«器室，醮用射頻功率至各半導釀圍壁元 件，並適當地綢整其S度。在此一可供S擇之實施例中， 於一生產晶片之化學汽柑澱積處理中此反應器可以用傳統 式化學汽相澱積反®器之方法操作而勿須利用本發明之任 公锋 (請先閱讀背面之注意事項再填寫本頁) 衣氓伕义度適巧士國國家標龙, Λ4&lt;洛 77 經濟部中央橾準局員工消費合作社印製 A7 ___B7_ 五、發明説明（74 ) 何形態。此後，一淸理操作係引用所有本發明之形態來實 施。在此一清理操作中，半導體面壁之内表面之澱積之污 染物係被侵蝕脫開之速度係增強，而勿必要依據本發明藉 醮用射頻镐壓電力至半導鼷圍壁而提昇表面溫度。 半導體圍壁之形狀可以籍精辣工作者作變化Μ符合特 殊用途之》特需求。例如，在第48Α和48Β圈之實施例中&gt; 此硅裙部1010有一 “L”形截面（由裙部1010之半導體圔 筒形部分和半導腥環狀脚所形成）Μ增加自晶片周邊至裙 部10 10之垂直向表面之距離*然而在其他附圖之資施例中 此裙部10 10之内表面係完全地筆直，並因此而靠近晶片周 邊。半導黼裙部1010之形狀上之此一變化亦可在任何一個 所說明之實施例中實施。 變化窗口霣極S度和射頻僱壓功率： 三種儀壓射頻和控制»度之霣極之使用，諸如第48Α 圈之晶片基座1060,頂板1020和裙部1010*其中之兩値（ 頂板1020和裙部1010)包含一半導鑛物質諸如硅，並因此 供给游離硅至霣漿化學*增強各櫃處理特性，包括#蝕速 度和侵蝕選擇性。電漿之強烈分解待性促進游離硅之進入 至氣體相位内，以與«柑結合及/或清除氟。 罨漿侵蝕反應器之一項問題係電漿之此分解待性當含 氰氣钃之化學反*係使用時造成游離氟之高濃度*例如， Μ優蝕氧。此将增加侵蝕氧之速度，但亦增加柑两聯之晶 片物霣之侵蝕速度而逭些物質係不醮侵蝕者•諸如聚硅， 並因此減少氧至聚硅侵蝕選擇性。 «張尺度遴用中國國家標隼（CNS ) λ4,έ(洛η&lt;:：^7公緩’ , 扣衣 Ί (請先閱讀背面之注意事項再填寫本頁) -78 - A7 309692 _ B&quot; 五、發明説明（75 ) 對減少氧至聚硅侵蝕S擇性之問題之解決方法係在本 發明中由含硅電極1010，1020供_游離硅至電漿而使其容 易。由此游離哇之氟清除可容許所諝之“較輕”聚合化化 學作用之使用（一 “較輕”聚合物化學作用係在下文所提 出之工作範例中指定）。一“較輕&quot;聚合物化學作用係它 有一較少趨勢來澱積聚合物•包括在室表面上Μ及晶片上 氧之一層内所侵蝕之開口之邊壁上。藉如此控制聚合物澱 積於邊壁上，侵蝕外形係不會被杻曲，因此，侵蝕於氧化 物層内之開口不會決窄而深I因此而使侵蝕外形完美並避 免侵蝕停止於很深之氧化物層内，此將會擴寬侵蝕窗口。 其結果係增加氧化物優蝕速度，增加以聚硅為準之氧化物 選揮性，並增強氧化物侵蝕各向異性和垂直向外形，以及 減少微負載。 游離硅和較輕聚合物化學作用之另-優點係該游離硅 影鬱聚合反鱖，並產生更播定之鈍化聚合物澱積在聚硅更 多於在氧化物上，俾使比較軽聚合物化學作用趨向於形成 聚合更強烈地在聚硅上並急《I地減少在一氧化物上，諸如 氣化硅者，它係要予侵蝕者。此一待激增強氧化物對聚硅 侵蝕S擇率。 此外，檯牲性質之含硅電極與含硪及含氣氣體諸如一 氧化硝及/或二氧化硪添加物合作池操作，以形成在聚硅 表面上之聚合物。此一含硪和含氧添加物氧腰之優點係兩 項：U)通過氧化物層在侵蝕開口内它提供一聚合物增加 之受控制之抑制，Μ防止侵蝕之停止* Μ及（b&gt;它並不同 本呔張尺度適π中S爿家漂隼CNS ' Λ4Κ洛I : 1厂’公t n In m if It - n - · I n n· n _ m T HI n _ n----r (請先閱讀背面之注意事項再填寫本1) 經濟部中央標準局員工消費合作社印製 79 309692 Μ Β7 五、發明説明（76 ) 樣地抑制聚合物形成在聚硅上。此将增大硅侵蝕之抑制之 增強氧化物對聚硅選擇率。一如上文所說明者，比較軽聚 合物化學作用铕控制聚合物形成在氧化物表面，通過深氧 化物層而避免侵蝕開口内之停止侵蝕。不過，它確促進一 適當份量之聚合物形成在氧化物邊壁上Μ增加侵蝕之各向 異性*並藉Μ優化垂直向之侵蝕外形。此外，在含有CHF3 主侵蝕劑之一氣體化學作用内這些持性之使用亦係合作性 質，其中氧化物侵蝕速度Μ其他氰化學作用為準而隨聚硅 侵蝕速度之減小而增大*此係一項顯著之優點。 前述特性•與控制含硅電極1010，1020之溫度相結合 ，容許適當處理領域之開發Μ優化侵蝕S擇性。若干處理 領域在下文指定之工作範例中係已開發。 工作範例： 前述理念 &gt; 係使用大致上相當於第48Α圖實施例之一 電漿反應器而在下列工作範例中被開發，其中比硅頂板電 極丨020有一 10时之直徑，此圖筒形裙部[010有一 10吋直徑 ，晶Η 1065和頂板1020之間之空陳係4时，此裙部1010係 己接地線•以及一射頻偏®電係«用於晶片基座1060並至 頂板霣極1020。同時，於100千赫茲上各棰選定之功率位 準之射頻偏壓電係醮用於頂板1020。2.0兆赫玆3250瓦之 霣漿源射頻功率係醮用於線圈1040，Μ及1.8兆赫Η至1400 瓦之射頻《壓功率係應用於晶Η基座1060。室1035係保持 在50毫托之壓力。比輕聚合物化學作用係由結合800 see» 氬，100 seen CHF3以及38 sccb C02之氣體溁量進入室 +&amp;4氏張义度遴用中S國家埭準 : CNS ! \4規办：!0 &lt; ：^· ---------- . I ―― I I I I 丁— — I I I —- (請先閱讀背面之i意事項再填寫本頁) 經濟部中央樣隼局員工消費合作社印製 80 經濟部中央標隼局員工消费合作社印製 309692 at B7 五、發明説明（77 ) 1035内而提供。此晶片係Μ傳統式技術冷卻Μ避免遇熱。 在每一下列範例中，100秒之侵蝕時間係經引用。 在一第一工作範例中，頂板1020和裙部1〇1〇之a度兩 者俤保持在15(〕υ，Μ及500瓦射頻傷壓功率係應用於頂板 1020。結果是一 15 : 1之氧化物一至一聚硅侵蝕菹擇性。 虬一選擇性係不適合Μ使用*其中侵蝕之開口向下2毫微 米至硅基體者係較其他侵蝕之開口僅向r 4000埃至一中間 聚硅層者要深300%。事實上，通過中間聚硅層之沖孔係 在晶片中央和晶片邊緣均已觀察到。 在一第二工作範例中，頂板1020上之射頻軀壓功率係 增大至1250瓦·此将有幾分增大聚硅一對一氧化物侵蝕選 擇性至20: 1。不過，相同之沖孔通過之問題係一如第一 工作範例一樣而在此工作範例中観澜到。 在一第三工作範例中，在頂板1020和裙部1010上之溫 度係昇高至260¾以及沒有軀壓射頻功率係臑用於頂板1020 。此氧化物對聚硅遘擇性增大至25: 1，但穿孔問題不改 〇 在一第四工作範例中*此260T：之霣極溫度係保持， 而同時在頂板1020上之軀壓射頻功率係增大至250瓦。在 此一情況下，此氧化物對聚硅選擇性跳雄至80: 1，以及 穿孔問題僅布晶Η邊緣附近觀測到。 在一第五工作範例中，此260f霄極溫度係保持，同 時頂板電極1020上之《壓射頻功率係加倍至500瓦。在此 一狀況下，氧化物對聚硅選擇性增大至120: 1，以及穿孔 衣纸ft尺度通用中國國家嘌准（) A4規洛；：丨〇 公t ) m —^ϋ ^^^^1 I— 11 m^i —^ϋ In- - ^^^^1 —^n m nn —^ϋ - 、-=a (請先閱讀背面之注意事項再填寫本f ) 81 A 7 B7 五、發明説明（78 ) 問題係消除。 在一第六3：作範例中，此260t〕電極溫度係保持，同 時頂板霣極1020上之僱壓射頻功率係增加至800瓦。此將 增加氣化物對聚硅之侵蝕選擇性至150: 1。一如在前一範 例中，沒有中間聚硅層之穿孔發生於晶Η中央抑或晶片邊 续。 雖然本發明業己藉特別參考較佳實施例而說明，吾人 應瞭解者，邸在不背離本發明之精神和範圍下仍可達成其 變化和變更。 (請先閱讀背面之注意事項再填寫本頁) 裝. 經濟部中央標隼局員工消費合作社印製 束紙ft尺度適用中國；n家堞华：CNS ; Λ4规洛丨:！0、：‘r公螫 82 經濟部中央標隼局員工消費合作社印裝 309692 at B7 五、發明説明（79 ) 元件檷號對照 100 .. ..圖筒形室 195 .. ..串聯電容器 105 .. ..邊壁 200 .. ..串瞄電容器 110 · · ..圖盤形頂板 205 .. ..串聯電容器 115 .. ..檯座 210 · _ ..並瞄電容器 120 .. ..晶片基座 220 .. ..邊線圈天線 125 ·. ..晶片 230 ·. ..硅頂板 130 _ . ..射頻發電機 235 . · ..線圈天線 135 .. ..阻抗匹配電路 250 .. ..功率分裂器 137 ·. ..氣醱入口 260 .. ..控制器 140 .. ..真空泵 270 ..圖頃形内線圈（上〉 145 .. ..頂上感應天線 280 .. ..圖頃形外線圈（下） 147 .. ..天線夾持具 280 ..匹配電路 150 .. ..射頻發射機 290 ..匹配電路 155 .. ..阻抗匹配電路 300 ..發霄機 158 . · ..絕緣體 305 .. ..發電機 160 .. ..功率分裂器 310 _ _ ..射頻絕緣濾波器 165 .. ..射頻發電機 315·· ..射頻絕緣濾波器 170 .. ..阻抗匹配電路 320 .. ..接地射頻濾波器 175 ·. ..内線圈 325 .. ..接地射頻濾波器 180 ·. ..外線圈 3 30 .. ..匹配絕緣濾波器 185 .. ..電漿源發電機 335 ..匹配絕緣濾波器 190 .. ..電漿源發電機 4 00 .. ..背部平面 (請先閱讀背面之;:i意事項再填寫衣S ) 裝.RXIL Consumer Cooperative Society tvIL ----------- If ---- * nn HI n ^ — * nn * 1 (Please read the precautions on the back before filling out this page) According to another aspect of the invention Special * The central and edge air vent jets 2200, 2210 are in the center and side portions of the top plate 1020, respectively * from the standing air supply wheels 2220, 2225 to receive the early air-breathing monarch. This special feature, the gas rolling speed and gas mixture at the center of the wafer and the periphery of the wafer can be adjusted individually to precisely compensate for the non-uniformity of the wafer from the "center to the edge". So, for example, this gas shovel can supply 1 2220 to supply a 雜 霣 precursor gas mixture Μ—the roll speed is above the center of the wafer. At the same time, this child ’s supply wheel 2225 can supply another stromal precursor gas mixture Μ another A roll speed is above the periphery of the wafer. Although the attached plaque shows that this gas monk is used to connect the 2220 to the single gas chamber above the center of the wafer 2220 * Multiple gas inlets are placed above the center of the wafer or a shower head configuration can also be used to control the gas above the center of the wafer Get the most out. Although this drawing shows that the gas supply 2225 is coupled to the multi-tilt gas barrier inlet 2210, which radially meets the side wall or skirt 10 10 and extends toward the edge of the wafer, the gas supply can also replace the one connected to the gas inlet. To extend toward the edge of the wafer, if it meets the top plate 1020 downward or through the shaft 1050 upwards, to control the amount of gas ram rolling above the green edge of the wafer. The radio frequency power of the engraved source is applied to the coil sensor 1040 across the coil connectors 2310 and 2320. «E RF power is used for wafer pedestal 1060 via pedestal connector 2330. Radio frequency power or a ground potential system meets the connector. Ben Zhile has spent it again in the 1st country. Falcon CNS) Λ4 哫 珞 ί D, V Gongf; -68-Employee Consumer Cooperative of the Central Bureau of Samples of the Ministry of Economic Affairs of China A 7 B7 Fifth, the invention description (65) 2340 is applied to the semi-conducted snakehead wall pole 1030 (including the garden disc-shaped top plate 1020 and the simple-shaped skirt 1010). The different ways are spitting mold. In the above of this specification, M is used to provide separate RF power for the turn to the semiconductor window surrounding wall 1030, the induction coil 1040, and the wafer base 1060, etc. (e.g., 1, 5, 19 Or the one shown in 23), or the RF power split from only the RF source to all places (such as those shown in *, eg 4, 18, 19, or 20), any of which can be applied Examples in circle 48A. In addition, the different coil geometry is different from the above in this specification (as shown, for example, 30A, 30B, 30C, 31A, 31B, 31C, 32, 33 or 34) * Any one of them can refer to M to implement the * embodiment of FIG. 48A. Therefore, the 48A embodiment has three slap unicast electrodes, namely: (a) wafer base 160, (b) semi-conducting top plate 1020, and (c) semiconductor skirt 1010. Each of these three types of "electrodes" can be larger or smaller than the other two bows in the effective area. * Depends on the desired interaction between the special "霣 极" and 霣 浆. According to one of the three electrodes, the pile in the effective plaque which is subject to the other two is large or small, and the flux and energy of the plasma ions in one dip can be distributed according to the other. To be noted, the other electrode is a quasi-one electrode. The decrease in the effective area increases the plasma ion flux and energy setting at this point. This will provide another way to control the interaction between an electrode and the plasma, and can be used, for example, to mitigate the radio frequency «compressive power requirements or S-degree requirements on the interaction of an ideal electrode with the plasma. As an example of the ideal interaction between the extreme pole and the mao pulp, in one of the Zhongqi styles of the present invention, we want to prevent the deposition of matter on the inner surface of the semi-conducting perifluorescence, including two agricultural paper scale General Chinese National Falcon; C \ S;. \ 4 叱 slightly ;; :: 〇 'W male crimson, installed -T (please read the precautions on the back before filling in this page) 69 Central Falcon Bureau of the Ministry of Economic Affairs Printed by the industrial and consumer cooperative A7 ___ V. Description of the invention (66) The semi-conductor is very long (ie, skirt 1010 and top plate 1020). By keeping the semiconducting electrodes free of deposited pollution (for example, polymer precursors), the contamination of the wafers due to the deposited material from the electrodes can be prevented, and at the same time the electrodes are left unattended It is covered so that it can continue to participate beneficially in the process of benign processing. For example, the electrode can be a silicon-containing substance, M and the slurry treatment can refer to the silicon oxide erosion procedure of the cyanide-containing gas rod. In this case, the electrode provides sputtered silicon material into the II slurry to Remove cyanide. In any case, T * moderation of RF power and power temperature can be achieved by adjusting any one, some, or all of the following three filling parameters at the first pole: U) The radio frequency compression power of one electrode, (b) the temperature of one electrode, M and (c) the effective B of the other electrode are the effective area. Therefore, if we want to minimize the S-degree of one of the electrodes, Μ and the power of the RF instrument used for the first pole should be minimized, and at the same time, no matter how to prevent the destruction of substances (such as polymer pioneers)稹 on the upper pole, then the effective S of this pole can be reduced by M to increase the plasma ion flux Λ and energy position at this pole, so as to be able to reduce RF body pressure power supplement ». In this method, the effective selection of the plaque can alleviate the RF mounting work and temperature requirements during the interaction between an ideal «pole and 霣 浆. In the 48th embodiment, the coil sensor 1040 can also be divided into separate inner and outer coil sensors. For example, the inner and outer coils Qi Qiqi are described in Section 52. Inner and outer coils as devices 24 10 and 2420. Various ways to drive such internal and external line senses and half of the guide wall are disclosed in the upper part of this description (for example, if (please read the precautions on the back and then fill in this page ) -Installation--A7 B7 309692 V. Description of invention (67) (please read the precautions on the back and then fill out this page) as shown in Figures 6 and 16), any one of which can refer to Example of the capital of 48Α 圔. In a special case, where the distance between the crystal Η and the top plate is small • Separately controlling one of the external antenna coils 2420 is the plasma density above the center of the wafer, which is lower than the wafer periphery due to the distance from the small wafer to the top plate The upper one | by lowering the RF power applied to the outer coil inductor 2420 whichever is used for the inner coil inductor 24 10 will increase the source power to the plasma density which prevails above the wafer periphery. Although the embodiment of circle 48A describes the processing plaque] [035 to the pump B9 annulus 1070, the embodiment of the country 48B states downwardly parallel to the axis of the cylindrical skirt 10 10 to the pump 1080. The selective magnet ring 2130a * 2135a prevents the beating slurry from leaking down from the treatment area 1035 to the pumping belt. In the 48A _ embodiment, in order to further prevent the leakage of the plasma slurry, this hole 1075 has a relatively high width separation ratio, so that the leaked plasma ions or dips tend to collide with each other and are completed It is absorbed on the inner surface of the hole 1075 before it meets the passage there. Another form of reducing the leakage of the encyclopedia is a gentle route through the opening 1051 between the ring 1050 and the bottom of the skirt 1010. As shown in the attached ring * The collar 1050 and the bottom of the skirt 1010 have an orange-like overlapping ladder shape: the Ministry of Economic Affairs Central Standard Falcon Bureau employee consumption cooperation Du Yinfan: in the form of overlapping broadcast boards ... .. It restrains any dangling teleportation to pass along the gentle route of this empty Chen 1051, so as to increase the colorful sound of the dangling bump and its surface. In Section 48A_, the national tube-shaped skirt 1010 is electrically separated from the coil-shaped top plate 1020, and each can be connected to a single "RF Power Source" via connectors 2340 and 2340a, which will allow close access The condition of the paddles around the crystal Η is controlled by the RF radio frequency potential used for the connector 2340a, and the degree of appropriateness in the graph tube is suitable for the family generation: C \ S ’2ί,): 尸 公 t 71 -A7 B7 V. Description of the invention (68) The upper part of the skirt 1010 is controlled by the RF potential of the connector 2340 used for the disc-shaped top plate 1020 by unicast, and the one applied to the connector 2340 tends to affect the «near the center of the wafer The condition of the encyclopedia. The various ways to control the position of the radio-frequency ears on the part of the two walls of the semiconducting window that are separated from each other are disclosed above in this specification (for example, as shown in Figures 42, 46, 10, 11 or 12), Any one of them can be cited to implement the embodiment of FIG. 48A. The Ministry of Economic Affairs, Central Standard Falcon Bureau Employee Consumer Cooperative printed and printed (please read the back of the first; 1 and then fill in this 1) Because the skirt 1010, the top plate 1020, and the wafer base 1060 are very easy to use as separate The electrodes, any one of which may be electrically grounded according to the other values, and one of the ungrounded wires may be driven by the same or different sources. For example, as explained in plane 48c, the first RF antenna source 30 10 of frequency ^ is connected to the semiconductor window electrode 1020, and the filters 3020 and 3030 prevent the return of RF power at frequencies 6 and f3 from connecting to a The radio frequency impedance is matched with Hylu 3035. The second RF power supply 3040 of the frequency is connected to the semi-conducting pus top skirt 1010, and the filters 3050 and 3060 prevent the return of the RF power at the frequency fi $ f3 to connect to an RF impedance matching circuit 3065. The third radio frequency source 3070 is connected to the wafer base 1060. At the same time, the filters 3080 and 3090 prevent the return of radio frequency power at the frequency 2 and 2 from being connected to an impedance matching circuit 3095. The 48c_ embodiment may be It is possible to change M at will by grounding any β of the three-tilt element 1020, 1010 or 1060. The formation of the semiconducting wall 1130 as a separate silicon work piece provides the additional advantage of easy cracking, and therefore It is more suitable. Section 49. An example equivalent to section 48Α_ &gt; Except that the skirt 1010 and the top plate 1020 are not mutually exclusive and can even form a single book. Standards; CNS) Λ4 幾 尾 閾 鲼 局 Employee Consumer Cooperatives of the Ministry of Economic Affairs A7 B7 V. Invention description (69) Except for the monolithic silicon workpieces. The 50th figure illustrates this ring-shaped semiconductor top plate 1020 How can it be split into one The central disc portion 1020a and a peripheral annular portion 1020b, and from this annular portion the stub-shaped skirt portion 10 10 extends downward. As in the embodiment of FIG. 49, the condition of the slurry at the center of the wafer The plasma conditions of He Jing H Bianxu can be controlled by the individual radio frequency pick-up and multiplying numbers used for Jianbei connectors 2340 and 2340a, respectively. It is used to control the above trade example with reference to Figure 48A. Any of the various ways mentioned above for the part of the semiconductor window enclosure 10 30 mentioned above can be used to implement the 50th embodiment. Section 5 1_Describe how this semiconductor window enclosure 1030 can be Divided into three separate parts, including (1) the inner disc-shaped portion 1020a of the top plate 1020, (2) the annular portion 1020b outside the top plate 1020, and (3) the skirt portion 1010 separated from the loamy portion 1020b. The RF multiplier can be used for the three-tilt part, through the joint 2340 to the inner disc-shaped part 102 () a, through the joint 2340a to the skirt 1010, M, and through the joint 2340b to the outer annular part 1020b. How does the embodiment of 50_ can separate the inner and outer sense ® lines The combination of 2410 and 2420 controls the plasma condition on the center of the wafer and above the edge of the wafer. The connectors 2430, 2435 and 2440, 2445 go to the inner and outer coil 2410 * 2420, respectively. The RF power source may be driven by the split RF power from a common power source. Κ can spit out various ways of combining the driving parts of the inner and outer inductance® coils 2410, 2420 and the semiconductor window wall 1030 separated « In the above description of the above text (for example, shown in the 42nd, 43th or 46th circle) * Where this paper size is left as the Chinese National Dairy CVS _ Α · Η? · 格 · I.;!: 0 &lt; + I Gu Yi IΓ I order (read the precautions on the back and then fill out this page j 309692 A 7 B7 V. Description of invention (70) Any one of the printed by the Central Standard Falcon Bureau Employee Consumer Investment Cooperative of the Ministry of Economic Affairs can be Reference is made to the embodiment of Gongshi 52nd Garden. Section 53_ illustrates how the embodiment of Section 51_ can be combined with separate inner and outer coil sensors 24 10, 2420. Circle 54 illustrates how the 48A plaque tribute embodiment can be combined with a country-shaped side coil 2610 wound around the semiconductor skirt 1010 to simulate one of the tenth boudoir embodiments in one way. Plasma RF source power system meets connectors 2620, 2630 and bin is used for side coil 2610. Preferably, the top coil 1040 and the side coil 2610 are separated by a distance at least equal to about twice the depth of the RF magnetic field in the plasma. Alternatively, if the coil inductor 1040 is placed above the top plate 1020, it can be eliminated in order to support the side coil, and the embodiment of the seventh, eighth and ninth loops is molded. In this case, only the skirt 10 10 needs to be a semiconductor material, providing a cylindrical semiconducting window surrounding wall 10 30, and the top plate 1020 may be an insulator (for example, like silicon nitride). Any one of the 7th, 8th or 9th circle technology uses M to apply RF power to draw a simple semi-conducting window wall, the coil and the wafer base can refer to the implementation of M 54_ example. The 55th face illustrates how the embodiment of FIG. 48A has its semiconducting window wall 1030 divided into a top plate 1020 and a skirt 1010 *, which can be combined with a coiled edge coil 2610 wound around the skirt 1010. Explain that in any of the 10th, 11th and 12th circles, the application of the ejection power to the separated top plate part and the top and side coil sensor can be used to implement the embodiment of FIG. 55 with Μ. The 56th plaque illustrates how the semiconductive semiconductor window wall 1030 is divided into an inner disc-shaped portion 1020 a and an outer ring-shaped portion II, one, and mouth (please read the back side first) Please fill in this page again for details of the matters in mind) The yttrium paper scale is applicable to the national sample falcon 'C \ S: A4 Xianluo: 2U) 7 4-Ministry of Economic Affairs Central Standard Falcon Bureau Employee Consumer Cooperatives A7 B7 V. Description of invention ( 71) The one with the skirt 1010 in 1020b is combined with the side coil wound by the skirt 1010. Any of the methods described in Figs. 10, 11 and 12 of the top plate portion M and the top and side coil inductors separated by radio frequency power so far can be used to implement the 56th coil embodiment. FIG. 57 illustrates the embodiment of the 51st plaque, how the semi-conducted snake window surrounding wall 1130 is divided into an inner disc-shaped portion 1020a, an outer ring-shaped portion 1020b M, and a skirt 1010, which can be connected with a skirt The side coil 2610 that the part 1010 curls is combined. Section 58 explains how the top plate 1020 of the 48th plaque embodiment can be changed to have a top shape. The more daring * the shape of this country's top is a multi-radius country * where the radius of the sacred top increases from the edge to the center. The more appropriate but not necessary, the top plate coil sensor 1040 is consistent with the top shape of the top plate 1020. Similarly, the 59th circle illustrates how the top plate 1020 of the embodiment of FIG. 49 can be changed to have a top shape. Similarly, FIG. 60 illustrates how the top plate 1020 of the embodiment of FIG. 50 can be changed to have a top shape, and FIG. 61 shows how the top plate 1020 of the fifth 51_ embodiment can be changed to have a top shape. 62 plaques illustrate how the top plate 1020 of the 52th embodiment can be changed to have a top shape, and circle 63 illustrates how the top plate 1020 of the 53rd plaque embodiment can be changed to a stub top shape. How the top plate 1020 of the embodiment of the jump can be changed into a national top shape, the 65th circle shows how the top plate 1020 of the 55th tribute embodiment can be changed to a top shape, and the 66th circle shows the embodiment of the 56th painting How the top plate 1020 can be changed to a national top shape, and how the top plate 1020 of the 57th embodiment of the 57th aspect can be changed to have a picture top shape. The size of this paper is based on China's Gujiadi standard CNS! .V4 specification;;:! 0 g tf *. &Gt; 1 ml 14 &gt; I ml i ^ iB—manlv one ^ (please read the notes on the back (Fill in this page) A 7 B7 of the Ministry of Economic Affairs, Central Standard Falcon Bureau Employee Consumer Cooperative V. Invention Description (72) 68th description of the relative magnetic heading rings 2130 and 2135 previously mentioned in circle 48A In the first embodiment of the magnetic confinement configuration, in the 68th circle, the magnetic male ring is oriented end-to-end and faces the opposite magnetic pole. In Fig. 68B, the orientation of the relative magnet pole system is in the opposite direction from side to side, so the opposite pair of magnetic pole systems are built in parallel. In Fig. 68C, the relative magnetic male pole is oriented along the direction of the displacement between the two sharp magnet rings 2030 and 2035 at an acute angle obliquely. Figure 68D and 68E correspond to the 68B and 68C groups, respectively, except that the same magnetic pole system is juxtaposed to replace the opposite magnetic pole. Other configurations provide the required turning of ions from a straight path through this slit valve 1075 or other larger lug openings to provide the implementation of the present invention. Although the embodiments of 48A to 68C have been described with reference to different shapes of top plates and skirts (that is, if they are in the shape of a tray and a cylinder, respectively, or a drawing board and a top of a picture, respectively), they may Μ is the same or different shape formed by the rotation of the curve, including hemispherical, multi-radius H-shaped, stubborn, tapered, truncated cone or similar shapes. Although the foregoing description has mentioned the rotational symmetry, the antenna is not necessary to realize the present invention. M and the antenna can be any other form of inductively combining RF power into the room. Therefore, this inductive antenna, which is pseudo-quoted in this specification and the patent application list added here, is any electric roller bearing element adjacent to the pulp, which can at least inductively integrate the RF power to The skimmer, and therefore not a coil, and even less need to be placed adjacent to the roof of the anti-container room, but can be adjacent to any other suitable location, such as the side wall of the room. In fact, the paper standard for one sense is suitable for 1 Chinese twin (CNS 1. \ 4Xinluo (please read the precautions on the back and fill in this page) -5 76 309692 A7 B7 V. Invention description (73) The antenna can be exempted entirely, as in the embodiment of FIG. 69. The 69th wake is equivalent to the embodiment of the 48A sink, where the inductive antenna 1040 has been exempted. Instead, the RF power is capacitively coupled to Plasma, for example, includes a semiconductor top plate 1020 and a crystal base 1060 from a pair of electrodes. Although this description mentions «plasma-limiting magnets, it is a permanent magnet *. Electromagnetic susceptibility can also be cited as a mold-limiting magnet. Although Examples 48A to 68C_ have been described with reference to a plasma erosion reactor, but the present invention can also be applied to plasma deposition reactors, such as plasma reaction of chemical vapor deposition. In this case, this method can be applied in this way * that deposition occurs not only on the crystal H, but also on the wall of the chamber. Another option is available, this wall can be used with sufficient radio frequency The force is biased to K, so that no deposit is accumulated on the indoor wall, that is, the object is When deposited on the wafer. This will provide a great "point, especially, for example, M-vaporized silicon chemical vapor deposition of the slurry reactor". This is because · When there is no invention, this The inner wall of the reactor must be cleaned regularly. This operation is very difficult. Because the gasification of silicon dioxide is very slow * Di Ling in a fluorine-containing oxygen-cleaning oxygen compound, unless the surface temperature is very high The critical S degree of chemical erosion. Another optional method is printed by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs. The present invention introduces a cleaned air mule (for example, a gas containing "Qi") into the room, which can act as a treatment. Automatically dispose of the chemical film phase deposition reactor chamber, using RF power to each semi-conducting surrounding wall element, and properly shape its S degree. In this alternative embodiment, in a In the chemical vapor deposition process of producing wafers, this reactor can be operated by the method of traditional chemical vapor deposition reactor without using any public front of the present invention (please read the precautions on the back before filling this page) The degree of loyalty is suitable for the national standard dragon of Qiaoshi, Λ4 & Lo 77 Printed A7 ___B7_ by the Central Consumer Service Cooperative Staff Consumer Co., Ltd. V. Description of the invention (74) What form is thereafter. A simple operation is implemented by citing all the forms of the present invention. In this cleaning operation, the inner surface of the semiconductor wall The deposition of pollutants is enhanced by the speed of erosion and release, but it is not necessary to increase the surface temperature according to the present invention by using a radio frequency pick to press power to the semiconducting wall. The shape of the semiconductor wall can be used by skilled workers The modification M meets the special needs of special applications. For example, in the embodiment of the 48A and 48B circles> the silicon skirt 1010 has an "L" shaped cross-section (contained by the semiconductor tube portion and the semiconducting of the skirt 1010 Formed by fishy ring feet) M increases the distance from the periphery of the wafer to the vertical surface of the skirt 10 10 * However, in other embodiments of the drawings, the inner surface of the skirt 10 10 is completely straight, and therefore Close to the periphery of the wafer. This change in the shape of the semiconducting skirt 1010 can also be implemented in any of the illustrated embodiments. Variation window S-degree and RF power: three kinds of instrumentation RF and control »The use of the degree of the pole, such as the wafer base 1060, the top plate 1020 and the skirt 1010 of the 48A circle * two of them (top plate 1020 He skirt 1010) contains half of the mineral guide material such as silicon, and thus supplies free silicon to the mashes chemistry * to enhance the processing characteristics of each cabinet, including #etch rate and erosion selectivity. The intense decomposition of the plasma promotes the entry of free silicon into the gas phase to combine with citrus and / or remove fluorine. One of the problems of the slurry erosion reactor is the decomposition of the plasma. When the chemical reaction of the cyanide containing cyanide is used, it causes a high concentration of free fluorine *. This will increase the rate of erosion of oxygen, but will also increase the rate of erosion of the two-piece crystal wafers, and some materials that are not eroded • such as polysilicon, and thus reduce the selectivity of oxygen to polysilicon erosion. «Zhang Jilin uses the Chinese National Standard Falcon (CNS) λ4, έ (洛 η &lt; :: ^ 7 Gongbu ', button down Ί (please read the precautions on the back before filling this page) -78-A7 309692 _ B & quot Fifth, the description of the invention (75) The solution to the problem of reducing oxygen to polysilicon erosion S selectivity is that in the present invention, silicon-containing electrodes 1010, 1020 are supplied with free silicon to plasma to make it easy. The fluorine removal of wow allows the use of the "lighter" polymerization chemistry (a "lighter" polymer chemistry is specified in the working example presented below). A "lighter" polymer chemistry The role is that it has a less tendency to deposit polymer • including the side wall of the opening eroded in the layer of M on the chamber surface and oxygen on the wafer. By controlling the deposition of the polymer on the side wall by this, the erosion profile is It will not be bent, so the opening eroded in the oxide layer will not be narrow and the depth I will make the erosion shape perfect and avoid the erosion from stopping in the deep oxide layer, which will widen the erosion window. The result is to increase the oxide corrosion rate, increase the use of polysilicon as The selective volatility of the oxide, and enhance the anisotropy and vertical shape of the oxide erosion, as well as reduce the micro-load. Another chemical effect of free silicon and lighter polymers-the advantage is that the free silicon shadows polymerizes and kills More passivated passivation polymers are deposited on polysilicon more than on oxides, so that the polymer chemistry tends to form polymerization more strongly on polysilicon and is rapidly reduced to an oxide, Such as vaporized silicon, it is intended for eroders. This unstimulated enhanced oxide selectivity for polysilicon erosion. In addition, silicon-containing electrodes of Taiwan nature and gas-containing gases such as nitric oxide and / or Or, the oxygen dioxide additive cooperates with the pool operation to form a polymer on the surface of the polysilicon. The advantages of this oxygen-containing additive and oxygen-containing waist are two: U) through the oxide layer in the erosion opening it provides A polymer is controlled by inhibition, Μ prevents erosion from stopping * Μ and (b &gt; it is not the same as the original scale of the scale. The Scorpion bleaching falcon CNS 'Λ4Κ 洛 I: 1 plant' public tn In m if It-n-· I nn · n _ m T HI n _ n ---- r (please read the back first Please fill in the following notes 1) Printed 79 309692 Μ B7 by the Employees ’Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (76) Inhibit the formation of polymers on polysilicon. This will increase the inhibition of silicon erosion Enhance the selectivity of oxides to polysilicon. As explained above, compare the polymer chemistry to europium to control the formation of polymers on the surface of the oxide, through the deep oxide layer to avoid the erosion of the erosion opening. However, it does Promote the formation of an appropriate amount of polymer on the oxide side wall to increase the anisotropy of the erosion * and optimize the vertical erosion profile by M. In addition, these persistent properties are within the chemical chemistry of one of the main erosion agents containing CHF3 The use is also of a cooperative nature, in which the oxide erosion rate M other cyanide chemistry is subject to increase with the decrease of the polysilicon erosion rate * This is a significant advantage. The aforementioned characteristics, combined with the control of the temperature of the silicon-containing electrodes 1010, 1020, allow the development of appropriate treatment areas to optimize the erosion and selectivity. Several processing areas have been developed in the working examples specified below. Working example: The aforementioned concept &gt; was developed in the following working example using a plasma reactor that is roughly equivalent to the embodiment of FIG. 48A, in which the diameter of the silicon top plate electrode 020 is 10 o’clock. This figure is cylindrical Skirt [010 has a diameter of 10 inches, the empty space between the crystal H 1065 and the top plate 1020 is 4, the skirt 1010 is the ground wire • and a radio frequency bias electric system «for the wafer base 1060 and to the top plate霣 极 1020. At the same time, the RF bias voltage system at the selected power level of 100 kHz is used for the top plate 1020. The RF power of the 2250 watts 3250 watts plasma source is used for the coils 1040, M and 1.8 MHz H to The 1400 watt RF power is applied to the crystal H base 1060. The chamber 1035 is maintained at a pressure of 50 mTorr. The chemistry of the lighter polymer is determined by combining 800 see »Argon, 100 seen CHF3, and 38 sccb C02 gas volume into the chamber + &4; Zhang Yidu ’s selection of China National Standard: CNS! \ 4 regulations:! 0 &lt;: ^ · ----------. I —— IIII 丁 —— — III —- (please read the meanings on the back and then fill out this page) Printed by the Employee Consumer Cooperative of the Central Falcon Bureau of the Ministry of Economic Affairs Printed by the Ministry of Economic Affairs Central Standard Falcon Bureau Employee Consumer Cooperative Printed 309692 at B7 V. Invention description (77) Provided within 1035. This chip is cooled by traditional technology to avoid heat. In each of the following examples, an erosion time of 100 seconds is quoted. In a first working example, both the top plate 1020 and the skirt 1010 are kept at a temperature of 15 () υ, M and 500 watt RF wound pressure power are applied to the top plate 1020. The result is a 15: 1 The oxides of one to one polysilicon are erosive and selective. One selectivity is not suitable for use of M * where the eroded opening is 2 nanometers down to the silicon substrate, which is only r 4000 angstroms to an intermediate polysilicon than other eroded openings The depth of the layer is 300%. In fact, the punching through the middle polysilicon layer has been observed at the center and the edge of the wafer. In a second working example, the RF body power on the top plate 1020 is increased to 1250 watts. This will slightly increase the polysilicon one-to-one oxide erosion selectivity to 20: 1. However, the problem of the same punching through is the same as in the first working example. In a third working example, the temperature on the top plate 1020 and the skirt 1010 is increased to 260¾ and no body pressure RF power system is used for the top plate 1020. This oxide has an increased selectivity to polysilicon 25: 1, but the perforation problem does not change. In a fourth working example * this 260T: The extreme temperature is maintained, while the radio frequency power on the top plate 1020 is increased to 250 watts. In this case, the oxide selectively jumps to 80: 1 for polysilicon, and the perforation problem is only distributed Observed near the edge of the crystal Η. In a fifth working example, the 260f temperature is maintained, while the “RF power” on the top electrode 1020 is doubled to 500 watts. In this condition, the oxide Selectivity increased to 120: 1, and perforated clothing paper ft scale general Chinese national standard () A4 Guiluo: 丨 〇 公 t) m — ^ ϋ ^^^^ 1 I— 11 m ^ i — ^ ϋ In--^^^^ 1 — ^ nm nn — ^ ϋ-,-= a (please read the precautions on the back before filling in this f) 81 A 7 B7 V. Description of the invention (78) The problem is eliminated. In a sixth 3: As an example, the electrode temperature of 260t is maintained, and the RF power on the top plate 1020 is increased to 800 watts. This will increase the erosion selectivity of the vaporized polysilicon to 150: 1. As in the previous example, the perforation without an intermediate polysilicon layer occurs at the center of the crystal H or at the edge of the wafer. Although the present invention has been described with particular reference to the preferred embodiments, it should be understood by others that the changes and modifications can be achieved without departing from the spirit and scope of the present invention. (Please read the precautions on the back and then fill out this page) Outfit. Printed by the Central Standard Falcon Bureau Employee Consumer Cooperative of the Ministry of Economics. The bundled paper ft scale is suitable for China; n Jialonghua: CNS; Λ4 regulations Luo :! 0 、 ： rr 垫 82 Ministry of Economic Affairs Central Standard Falcon Bureau Employee Consumer Cooperative Printed 309692 at B7 V. Description of the invention (79) Component number comparison 100 ... figure barrel chamber 195 .. series capacitor 105 ... Side wall 200... Series aiming capacitor 110... Figure disc-shaped top plate 205... Series capacitor 115... .. stand 210. _ .. and aiming capacitor 120... Wafer base 220... Side coil antenna 125... Wafer 230. .. silicon top plate 130 _ .. RF generator 235.... Coil antenna 135... Impedance matching circuit 250 .. .. power splitter 137... Gas inlet 260... Controller 140... Vacuum pump 270 .. figure square inner coil (top> 145... Top induction antenna 280... Figure square shaped outer coil (lower) 147.... Antenna holder 280 .. matching circuit 150.. .. RF transmitter 290 .. matching circuit 155 .. .. impedance matching circuit 300 .. hairpin machine 158 .. insulator 305... Generator 160... Power splitter 310 _ _ .. RF insulation filter 165.. .. RF generator 315... .. RF insulation filter 170... .Impedance matching circuit 320 .. ..Grounded RF filter 175 · ..inner coil 325 .. ..grounded RF filter 180 .. .outer coil 3 30. ..Matched insulation filter 185 .. .plasma source generator 335 .. Matched insulation filter 190... Plasma source generator 4 00... Back flat (please read the back first;: i matters before filling in clothes S)

'1T 衣呔掁尺，文過另似国國孓標隹.CNS ; Λ4~.洛 ：：&gt;).- 83 309692 (請先閱讀背面之注意事項耳填寫本頁)'1T clothes pinch ruler, the text is similar to the national standard. CNS; Λ4 ~. Luo ：： &gt;) .- 83 309692 (please read the precautions on the back to fill in this page)

A7 B7 五、發明説明（80 ) 405 .... 導電臂 850 . .螺旋撓組 410—— 導電體中央 900 .. .對穿開口 415—— 孔|空間 910.. •孔 420 … 外導電環帶 920 . · .直徑孔 425 .... 導電臂 93 0 . .氣體進给頂 430 .... 虛凝中心點 940 .. .對穿開口 500 .... 支承基體 960 ·. .階梯 510 .... 加熱層 970 .. .密封 520 .... 冷卻板 990 . .法拉第屏 550 .… 槽形孔 1010 .. ..裙部 560,565 . ...同心環狀孔 1011 . ..脚 600 …. 導電體 1020 . ..頂板 610—— 螺放導電體 1022 . ..絕緣環 620 .... 中央點 1030 . ..圍壁 700 .… 外圚形導電體 1035 . ..處理區 710 ____ 弧形臂 1040 . ..感醮器 715Α,Β,C ....终端 1044 . ..線圈天線 720 .... 中央點 1050 . ..軸環 經 濟 部 730 .... 弧形臂 1051 . ..間隙 中 央 標 740Α,Β,C ....終端 1060 . ..基座 隼 員 800 … 國筒形螺旋 1065 . •.晶片 工 消 810 .... 内螺旋 1070 . ..泵唧環帶 費 合 作 830 .... 撓組 1075 . ..開缝閥 社 .泵 印 840Α,B,C ....叠看 1080 . % 衣呔張尺犮通爿中SS'f嘌龙.：C's ' Λ4;ν,咯 2!〇 - 2'厂公峰 84 經濟部中央標準局員工消費合作社印製 309692 A7 B7 五、發明説明（81 ) 1110 .. ..加熱層 2410 ...線圈感應器（内〉 1112 . · ..絕緣層 2420 ——線圈感應器（外〉 1114.· ..熱阻空氣間隙 2430 ...接頭 1120 _ · ..冷卻板 2435 ....接頭 1122.. ..水冷套 2440 ....接頭 2130 . _ ..磁鐵環 2445 ....接頭 2135 . · ..磁鐵環 2610 ..~ .邊線圈 2150 .. ..冷襯墊 2620, 2630 ...接頭 2155 .. •.沈孔（冷〉 3010 ....射頻霄源 2170 ·. ..熱沈孔 3020 ....嫌波器 2175 .. ..冷沈孔 3030 ——濾波器 2200 ..噴射口 3035 ....阻抗匹配電路 2210 .. ..噴射口 3050 ....濾波器 2220 ..氣驩供輪 3060 ——濾波器 2225 .. ..氣醴供讎 3065 ....匹配霄路 2310 .. ..線圈接頭 3070 ....射頻電源 2320 _ . ..線圈接頭 3080 ----濾波器 2330 . ..基座接頭 3090 ——濾波器 2340 . ..接頭 3095 ____匹配電路 ^ϋ ί^· nf^i ^mt s ——^^1&quot; —m n ^mK nn— fsnv Ink— ι^ϋ —^ϋι tlm n ,!J ΛΛ 、v'o&quot; (請先閱讀背面之注意事項再填寫本頁) 6紙乐尺度適闲家漂鲁.CNS 1 ..UU略 ：：〇 &lt; 85A7 B7 V. Description of the invention (80) 405 .... Conductive arm 850... Helical flexure group 410 —— Conductor center 900... Through the opening 415 —— Hole | Space 910 .. • Hole 420… outer conductive Endless belt 920... Diameter hole 425 .... Conductive arm 93 0 .. Gas feed top 430 .... Virtual condensation center point 940... Penetration opening 500 .... Support base 960... Step 510 ... Heating layer 970 ... Seal 520 ... Cooling plate 990 ... Faraday screen 550 ... Slotted hole 1010 ... Skirt 560, 565 ... Concentric annular hole 1011 ... . Feet 600 ... conductor 1020... Top plate 610-screw conductor 1022... Insulating ring 620 .... central point 1030... Enclosing wall 700... Outer conductor 1035... Processing area 710 ____ arc-shaped arm 1040 ... sensor 715A, B, C ... terminal 1044 ... coil antenna 720 ... center point 1050 ... collar economy 730 ... Curved arm 1051... Gap central standard 740 Α, Β, C .... terminal 1060... Base falcon 800… national barrel spiral 1065 ... wafer die 810 .. inner spiral 1070. .. pump ring Fei cooperation 830 .... Nao group 1075... Slotted valve company. Pump printing 840 Α, B, C .... stacked look 1080.% Yi Xie Zhang Chiluo Tong Zhong SS'f puro ..: C's 'Λ4; ν, slightly 2! 〇-2' Factory Public Peak 84 Printed by the Employees Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy 309692 A7 B7 V. Description of the invention (81) 1110... Heating layer 2410 ... coil inductor (Inner> 1112... Insulation layer 2420-coil inductor (outer> 1114... .. thermal resistance air gap 2430 ... joint 1120 _... Cooling plate 2435 .... joint 1122... . Water-cooled sleeve 2440 .... connector 2130. _ .. magnet ring 2445 .... connector 2135 .. .. magnet ring 2610 ..... Side coil 2150 .. .. cold pad 2620, 2630 ... Connector 2155... Sink hole (cold> 3010 .... RF source 2170... Heat sink hole 3020 .... wave filter 2175... Sink hole 3030-filter 2200. .Injection port 3035 .... Impedance matching circuit 2210... Injection port 3050 .... Filter 2220... Gas supply wheel 3060-filter 2225 ..... Air supply 3065 ... .Match Xiaolu 2310... Coil connector 3070 .... RF power supply 2320 _ .. line Connector 3080 ---- filter 2330... Base connector 3090 ——filter 2340 .. connector 3095 ____matching circuit ^ ϋ ί ^ · nf ^ i ^ mt s ---- ^^ 1 &quot; —mn ^ mK nn— fsnv Ink— ι ^ ϋ — ^ ϋι tlm n,! J ΛΛ, v'o &quot; (please read the precautions on the back before filling this page) UU Strategy: 〇 &lt; 85

Claims (1)

309692309692 ABCD 經濟部中央攮隼局員、工消費合作枉&quot;製 六、申請專利範圍 1. 一棰用以«理一工件之電漿反醮器，該反應器包含： 一反應器圍壁界定一處理室； 一基座在室内用Μ支承該工件於其葙理中； 一半導釀窗口電極置於該基座上面； 一氣體入口系统用Μ容許一霄漿先驅氣體進入該 室内； 一罨接頭勒接至該半導髏窗口電極； 一感應天線鄰接該半導鼸窗口電搔之一邊相對於 該基座，用Μ耩合功率通遇該半導體留口電極而進入 該室之内部， 其中該半導纆窗口電極包含： U〉一置於上面之頂部分；Μ及 (b〉一圍繞之邊部分，該半導體窗口電極之頂和 邊部分圃封該室之一處理區《用以限制電漿在該工作 之上面。 2. 如申請專利範圍第1項之反醮器，其中該圍封之邊部 分自頂部分伸展至該工件支承基座，該反應器另包含 U&gt; —狹窄通道在該邊部分和基座之間， (b) —婉曲通道在邊部分和基座之間。 3. 如申請專利範圍第1項之反應器，另包含： 一加熱器，熱聯接至該半導饉窗口電極；Μ及 —冷卻板，熱腰接至該半導體窗口電極。 4. 如申請專利範圍第1項之反應器，另包含： (請先閱讀背面之注意亨項再填寫本頁) 卜纸杀义度通家噤寒、CNS 公t 86 經濟部中央標隼局員工消費含作.社印製 A8 B8 C8 D8 κ、申請專利範圍 一通道通過該半導髖留口霣極，該通道包含下列 三棰装置之一： (a) —晶片開缝閥孔， (b&gt; —唧打環帶孔， (c) 一氣髖入口；以及 多俚電漿限制磁雄鄰接該通道。 5. 如申請專利範園第4項之反醮器，其中該通道包含一 泵晒環帶孔*該反應器另包含： 一泵唧環帶接近該半導體窗口邊部分之一周邊； 一泵聯接至該泵晒環帶；以及 其中，該通道伸展通過該半導體窗口之邊部分而 自該處理區至泵《Ρ環帶。 6. 如申請專利範圃第4項之反應器，另包含一防護包封 壩園繞每一該磁鐵。 7. 如申請專利範園第5項之反«器，另包含磁鐵冷卻器 ，與至少一鰌該磁嫌呈熱接«。 8. 如申請專利範園第4項之反懇器，另包含一可移出墊 期覆蓋該泵晒環帶之一内表面。 9. 如申謓專利範圍第8項之反《器，另包含一墊襯冷卻 器與該可移除墊襯呈墊接觸。 10. 如申請專利範匾第1項之反醮器，其中該氣鼸入口条 統至少包含一傾氣體入口通遇半導龌窗口霄極。 11. 如申請專利範圍第1〇項之反應器，其中該多儸氣髓入 口係可單獼地控制，並置於該工件之不同徑向位置之 iij * ； CNS ^ A4W.^· 2U) .V —公.後 1 - I I I ml i— -1 - j i i HI I I— —I I , 一 叫 n · i -.- -.- , (請先閱讀背面之注意事項再填寫本頁) 87 309692 A 8 B8 CS D8 經濟部中夹標準局員Μ消費合作.牡印製 六、申請專利範圍 上面，用Μ傾別地影湛該工件之不同徑向位置上面之 電漿狀況。 12. 如申請專利範圍第11項之反應器，其中該感醮天線包 含電分開之子天線部分鄰近該工件之不同之各自之徑 向位置。 13. 如申請專利範圍第12項之反應器，其中該分開之子天 線部分包含： 一内天線繞組置於該半導讎留口電極之頂部分上 面，Μ及置於該工件之中央部分之上面；Μ及 一外琛狀天線部分置於該半導體窗口之頂部分上 面，以及置於該工件之周邊環狀部分之上面。 14. 如申請專利範圍第13項之反應器，其中該分開之子天 線部分包含： 一頂部天線繞組，置於該半導體窗口霣極之頂部 分上面；Μ及 一圓筒形邊天線繞組，圍著該半導體留口霣極之 邊部分捲撓。 15. 如申請專利範围第12項之反臁器，其中該半導體窗口 霄極包含霣分開之諸部分，此部分包含一中央部分和 —邊部分，Μ及分開之接頭用Μ醮用分開之射頻電位 至該半導醱窗口霣極之分開之部分。 16. 如申請專利範園第15項之反應器，該分開之半導體窗 口電搔部分係鄰近該工作之不同之各自之徑向位置。 17. 如申請專利範園第15項之反懸器，其中該分開之半導 Λ ---------I I _ f— _ —i _ T ______ ^ (請先閱讀背面之注意事項再填寫本頁) 88 經濟部中央埭準局員工消費合作，社印製 Λ8 B8 C8 — —_ [)8 __ 六、申請專利範圍 睡窗口部分包含： 一内鬮盤形頂部分； 一外環帶頂部分。 .如申請專利範園第17項之反應器，其中該半導龌窗口 邊部分與該外環帶頂部分接合。 it如申請專利範園第π項之反《器，其中該半導體窗口 邊部分係自該外環帶頂部分霣分開，並包含另一該分 開之半導體窗口部分。 20. 如申請專利範園第〖項之反應器，其中置於該半導體 留口電極之頂部分上面者係大致上爲扁平狀，以及該 感應天線係與之一致。 21. 如申請專利範園第丨項之反醮器，其中置於該半導體 窗口電極之頂部分上面者係圓頂形。 22_如申請專利範圍第21項之反醮器，其中該感騵天線係 與該半導腥窗口之圓頂形頂部分一致。 23. 如申請專利範圍第22項之反暱器，其中該圔頂形頂部 分有一多半徑園頂形狀之有一最大半徑在其周邊Μ及 ~最小半徑在其内部。 24. ~棰用Μ處理一工件之電漿反醮器，該反醮器包含： 一反應器圔壁界定一室； 一基座在該室内用以支承該工件； 一半導鼸窗口置於基座上面；以及 一感*天線鄰近該半導鼸窗口之一邊相對基座， 其中半導體窗口包含： —裝 訂 各 (請先閱讀背面之注意事項再填寫本頁)309692309692 ABCD Member of the Central Bureau of Economics and Industry-Consumer Cooperation System 6. Application for patent scope 1. A plasma reactor used for «manufacturing a workpiece, the reactor includes: a reactor wall defining one A processing chamber; a pedestal supports the workpiece in its chamber with M in the chamber; a half of the brewing window electrode is placed on the pedestal; a gas inlet system uses M to allow a precursor slurry gas to enter the chamber; a gang joint It is connected to the semiconducting window electrode; an induction antenna is adjacent to one side of the semiconducting window electrically opposite to the pedestal, and uses M combined power to meet the semiconductor opening electrode and enter the interior of the chamber, wherein the The semiconducting window electrode includes: U> a top portion placed on top; M and (b> a surrounding side portion, the top and side portions of the semiconductor window electrode enclose a processing area of the chamber "to limit electricity The slurry is on the top of the work. 2. As in the counter-paste device of the first patent application, where the side part of the enclosure extends from the top part to the workpiece support base, the reactor further contains U-> narrow channel in The side part Between the pedestals, (b)-the graceful channel is between the side part and the pedestal. 3. The reactor as claimed in item 1 of the scope of patent application, also includes: a heater, thermally coupled to the semiconducting window electrode; Μ 和 —The cooling plate is connected to the semiconductor window electrode thermally. 4. If the reactor of the first item of the patent application scope, it also includes: (please read the note on the back side before filling in this page) Tongjia Xiaohan, CNS Gong t 86 Ministry of Economic Affairs Central Standard Falcon Bureau employee consumption content. The company prints A8 B8 C8 D8 κ, patent application. One channel passes through the semi-conducting hip and keeps the mouth pole, the channel contains the following three One of the devices: (a) — wafer slotted valve hole, (b &gt; — chirped ring with hole, (c) one-hip hip inlet; and multiply plasma to restrict the magnetic male from adjoining the channel. 5. If applying for patent Fanyuan Item 4's counter-boiler, wherein the channel includes a pumping ring belt hole * the reactor further includes: a pumping ring belt close to a periphery of a side portion of the semiconductor window; a pump is connected to the pumping belt ring; And where the channel extends through the side portion of the semiconductor window and from the From the processing area to the pump "P annulus. 6. If the reactor of patent application No. 4 is included, it also contains a protective encapsulation dam garden around each magnet. 7. If the application of patent application Fan No. 5 is reversed« The device also includes a magnet cooler, which is thermally connected to at least one of the magnetic suspects. 8. If the counter-supplier of patent application No. 4 is included, it also includes a removable pad to cover one of the pump belts. The inner surface. 9. If the reverse of item 8 of the scope of the patent application, it also includes a pad cooler in contact with the removable pad. 10. If the patent application plaque item 1 of the counter is used , Where the gas inlet entry system contains at least a tilting gas inlet to meet the semi-conducting window window pole. 11. For the reactor as claimed in item 10, wherein the multiple gas inlets can be controlled individually , And placed iij * at different radial positions of the workpiece; CNS ^ A4W. ^ · 2U) .V — male. Back 1-III ml i— -1-jii HI II— —II, one called n · i- .- -.-, (please read the precautions on the back and then fill out this page) 87 309692 A 8 B8 CS D8 Member of the Bureau of Economy, Standards and Technology, Ministry of Economic Affairs Μ Consumer Cooperation. 6. Scope of patent application Above, use M to distinguish the plasma condition above the workpiece at different radial positions. 12. A reactor as claimed in item 11 of the patent application, in which the sense antenna includes electrically separated sub-antenna sections adjacent to the workpiece at different radial positions. 13. The reactor as claimed in item 12 of the patent scope, in which the separated sub-antenna part includes: an inner antenna winding placed on the top part of the semiconducting retention electrode, M and placed on the center part of the workpiece ; M and an outer antenna part are placed on the top part of the semiconductor window, and placed on the peripheral ring part of the workpiece. 14. The reactor as claimed in item 13 of the patent scope, in which the separated sub-antenna part includes: a top antenna winding placed on the top part of the semiconductor window's dipole; Μ and a cylindrical side antenna winding surrounding the The edge of the semiconductor gap is curled. 15. As the counterfeit device of the 12th item of the patent application scope, in which the semiconductor window pole contains parts separated by a gap, this part includes a central part and a side part, and the joints of M and split are separated by M The part of the radio frequency potential that is separated from the corner of the semiconducting window. 16. For the reactor of patent application No. 15, the separated semiconductor window electroclamped portion is adjacent to the different radial positions of the work. 17. For example, the anti-suspension of patent application No. 15 in which the separated semiconductor Λ --------- II _ f— _ —i _ T ______ ^ (please read the notes on the back first (Fill in this page) 88 Employee consumption cooperation of the Central Bureau of Economic Cooperation of the Ministry of Economic Affairs, printed by the company Λ8 B8 C8 — —_ [) 8 __ 6. The scope of the patent application The sleeping window includes: an inner disc-shaped top part; With top part. The reactor as claimed in Item 17 of the patent application park, wherein the side portion of the semiconducting window is joined to the top portion of the outer ring. It is like the reverse of the π item of the patent application, where the semiconductor window edge part is separated from the outer ring top part and contains another part of the separated semiconductor window part. 20. For the reactor of patent application No. 〖item, the one placed on the top part of the semiconductor recessed electrode is substantially flat, and the induction antenna is consistent with it. 21. As the counterfeit device of Patent Application No. 1, the one placed above the top part of the semiconductor window electrode is dome-shaped. 22_ As the anti-bumper of item 21 of the patent application scope, wherein the sensor antenna is consistent with the dome-shaped top part of the semi-conductive window. 23. An anti-nickel device as claimed in item 22 of the patent scope, wherein the top of the sigmoid shape is divided into a multi-radius round top shape with a maximum radius at its periphery M and ~ minimum radius at its inside. 24. ~ A plasma reactor for processing a workpiece with Μ, the reactor includes: a reactor wall defining a chamber; a base in the chamber to support the workpiece; half of the guide window is placed on the base Above the base; and a sense * antenna is adjacent to one side of the semiconducting mandarin window relative to the base, where the semiconductor window contains: —binding each (please read the precautions on the back before filling this page) 8989 蛵濟部中央榡準局員工消費合作、社印製 3〇^692 中請專利範圍 U&gt; —置於上面之頂部分；Μ及 (b〉一包圍之邊部分，該半導髓窗口之頂和邊部 分圍封該室之一處理區，用以界限霣漿於該工件上面 Ο 25. 如申請專利範圍第24項之反應器，其中該包圍之邊部 分自頂部分伸展至該工件支承基座，該反應器另包含 一軸瓖在該邊部分和基座之間，籍提供下列兩項 中之至少一項，用以阻擂該邊部分和基座之間之電褒 滾動： U) —狹窄通道在該邊部分和基座之間， (b) —婉曲通道在該邊部分和基座之間。 26. 如申請專利範靨第24項之反應器，另包含： 一加熱器，熱職接至該半導體窗口； Μ及 一冷卻板，熱聯接至該半導齷窗口。 27 ·如申請專利範園第24項之反鼸器，另包含·· 一通道經遇該半導體窗口霣極，該通道包含下列 其中之一項： U) —晶片開缝閥孔， (b&gt; —泵昍環帶孔， (c) —氣醱入口； Μ及 多鏟電漿限制磁雄粼近詼通道。 28 ·如申請專利範圍第27項之反應器，其中該通道包含一 某唧瓖帶孔，該反_器另包含： --------—裝------1T------4 (請先閱讀背面之注意事項再填寫本頁}The Patent Contribution U &gt;-placed on the top part of the upper part; Μ and (b> a part of the surrounding side, the top of the semi-guided window The side part encloses a processing area of the chamber to limit the slurry on the workpiece. 25. The reactor as claimed in claim 24, wherein the surrounding side part extends from the top part to the workpiece support base The reactor further includes a shaft between the side part and the base, and at least one of the following two items is provided to resist the electric rolling between the side part and the base: U) — The narrow channel is between the side part and the base, (b)-the graceful channel is between the side part and the base. 26. The reactor as claimed in item 24 of the patent application also includes: a heater, which is thermally connected to the semiconductor window; and a cooling plate, which is thermally connected to the semiconducting window. 27. If the anti-ballast device of patent application No. 24 is included, it also contains a channel that meets the semiconductor window electrode, the channel contains one of the following: U) —the wafer slit valve hole, (b &gt; —Pump ring with holes, (c) —gas inlet; Μ and multi-shovel plasma limit magnetic male sparking channel 28. For the reactor of patent application item 27, where the channel contains a certain urn With holes, the anti-device also contains: --------— installed ------ 1T ------ 4 (please read the precautions on the back before filling this page) CNS Α45見咯 90 2 9 6 9 ο 3See CNS Α45 90 2 9 6 9 ο 3 ABCD 經濟部中夹標準局員工消費合作杜印^ τ'申請專利範圍 一泵唧環帶鄰近該半導醱窗口邊部分之一周邊； 一泵聯接至泵晒環帶；以及 其中該通道伸展通過該半導體窗口邊部分，自該 离理匾至泵W環帶。 29.如申請專利範園第27項之反應器，另包含一防護包封 壩圍繞每一該磁鐵。 3Q•如申請專利範圍第28項之反«器，另包含一磁鐵冷卻 器、與該磁雄之至少一傾呈熱接觸。 如申請專利範園第27項之反醮器，另包含一可移除墊 期覆該泵W環帶之一内表面。 32.如申請專利範圍第31項之反醮器，另包含一墊期冷卻 器 &gt; 與該可移除墊襯呈熱接觸。 33·如申請專利範圍第24項之反應器，其中該氣體入口糸 統包含多個氣鱧入口通遇該半導鱷窗口。 34. 如申請專利範圍第33項之反應器，其中該多値氣鱧入 口係可單播地控制，並置於工件之不同徑向位置上面 ，用以値別地影谌工件之不同徑向位置上面之電漿狀 況。 35. 如申請專利範圍第24項之反暱器，其中該感應天線包 含電分開之子天線部分臨近該工件之不同之各自之徑 向位置。 36. 如申請專利範圍第25項之反應器，其中該分銪之子天 線部分包含： 一内天線撓組 &gt; 置於半導鼸窗口之頂部分上面， 丨裝 訂 (請先閱讀背面之注意事項再填寫本頁) 91 309692 A8 B8 C8 D8 經濟部中夬樣隼局員工消費合作社印贤 六、申請專利範圍 並置於工件之中央部分之上面；以及 一外環狀天線部分，置於半導體窗口之頂部分上 面*並置於該工件之周邊環狀部分之上面。 37.如申請專利範圍第26項之反應器，其中該分開之子天 線部分包含·· 一頂天線繞組，置於半導钃窗口之頂部分上面； 以及 一圈筒形邊天線嬈組，圍嬈該半導醱留口之邊部 分捲撓。 38 _如申請專利範匾第25項之反應器，其中該半導龌窗口 包含電分開諸部分，此等部分包含一中央部分和一邊 部分，Μ及個別接頭用Μ應用傕別之射頻電位至該半 導醱窗口之分開之諸部分。 39. 如申_專利範讕第38項之反醮器，其中該分開之半導 龌苗口諸部分係鄰近工件不同之各自之徑向位置。 40. 如申請専利範園第38項之反應器，其中該分開之半導 «窗口諸部分包含： 一内圖盤形頂部分； 一外環帶頂部分。 41·如申請專利範圍第40項之反慝器，其中該半導體窗口 邊部分係與該外環帶頂部分相接合。 42.如申請專利範圊第40項之反應器，其中該半導髏窗口 邊部分係自該外環帶頂部分電分開*並包含該分開之 半導鼸窗口部分之另一傾。 &amp;纸.¾尺t ,ϋϋ阈篆標龙 :: Λ4Θ.咯.：：！◦ ' 公 t : _ Q9 - --------—裝------訂-----银 (請先閱讀背面之注意事項再填寫本頁) 經濟部中夬標隼局員工消費合作社印^ A8 B8 C8 、申請專利範圍 43. 如申誚專利範圍第24項之反應器，其中該置於該半導 龌窗口之頂部分上面者大致上係庸平狀，Μ及該感應 天線係與其呈一致形狀。 44. 如申請專利範圍第24項之反«器，其中該置於該半導 鱧窗口之頂部分上面者係圓頂形狀。 45. 如申請專利範圍第44項之反應器，其中該感醮天線係 與該半導鼸窗口之圓頂形之頂部分一致形狀。 46_如申請專利範画第45項之反應器，其中該圖頂形之頂 部有一多半徑國頂形之有一最大半徑在其周邊以及一 最小半徑在其内部者。 47· —棰用以處理一辛導體晶片之射頻電漿反暱器，並包 含一全部非金颶之圍壁，用Μ界定霣漿於一應理區內 於置該晶Η之上面。 48. 如申請專利範圍第47項之反應器，其中該非金屬画壁 包含半導黼物霣。 49. 如申請專利範圍第48項之反應器，其中該非金羼圍壁 包含霄介質物質。 50. 如申請專利範圔第48項之反應器，其中該半導體物質 包含含有硅及碘化硅之一级物質中之一。 51. 如申謓專利範圍第49項之反應器，其中該電介質物質 包含一级含有氮化硅，氮化鋁，石英及氧化鋁中之一 棰。 52. 如申請專利範圍第49項之反醮器，另包含一電接頭連 接至該圍壁，用以«用一霣位至該處，ϋ其雄子之碰 ---------裝------訂 (請先閱讀背面之注意事項再填寫本頁) 93 AS B8 C8 D8 六 經濟部中夹標隼局員工消費合作社印製 3〇9692 申請專利範圍 »用以促進連續之淸理。 53. 如申請專利範圍第49項之反應器，另包含一加熱器和 —冷卻器熱W接至該譖壁。 54. 如申請專利範圍第53項之反應器，其中該圍壁包含其 霣分開之置於上面之頂部分和包封邊部分，Μ及其中 該加熱器和冷卻器包含可分開地控制之加熱及冷卻元 件對，熱聯接至圍壁之該頂和邊部分之各自之一。 55. 如申請專利範圍第47項之反醮器，另包含： 一通道經過該非金鼸圍壁* 該通道包含下列三項中之一項： U) —晶Η開缝閥孔， (b) —泵晒環帶孔， U) —氣體入口；以及 多個霄漿限制磁雄鄰近該通道。 56. 如申請專利範圍第45項之反應器，其中該逋道包含一 泵《Ρ環帶孔，該反應器另包含： 一泵唧環帶鄰近該非金羼園壁之一周邊， 一泵聯接至泵晒環帶；以及 其中《該通道伸展通過該非金屬圍壁，自該處理 區至該泵W瓖帶。 57 ·如申請專利範園第46項之反應器*另包含一防_包封 層園繞每一該磁嫌。 58 如申請專利範園第46項之反應器，另包含磁雄冷卻器 *與該磁鐵之至少一傾呈熱接嫌。 -----------—裝---- 一OJ_ *** I^ (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局興工消費合作社印u A8 B8 C8 — D8 ^、申請專利範圍 59 _如申請專利範圍第45項之反應器，另包含一可移除塾 礅覆蓋泵W瓖帶之一内表面。 6〇.如申請專利範園第59項之反®器，另包含一墊«冷卻 器輿該可移除墊磧呈熱接觸。 61. 如申請專利範園第47項之反醮器，另包含多偏氣體入 口通過該围壁。 62. 如申請專利範園第61項之反應器，其中該多®氣體入 口係可單獨地控制，並鄰近該工件之不同徑向位置， 用以單掲地影響工件之不同徑向位置上面之霣漿狀況 Ο 63 _如申請專利範圍第62項之反應器，其中該感應天線包 含電分開之子天線部分，鄰近工件之不同之各自之徑 向位置。 64. 如申請專利範围第63項之反應器，其中該分開之子天 線部分包含： 一内天線撓組置於園壁之頂部分上面，並置於工 件之中央部分上面；以及 一外環狀天線部分，置於該圍壁頂部分之上面， 並置於該工件之周邊環狀部分上面。 65. 如申請專利範園第64項之反應器，其中該分開之子天 線部分包含： 一頂天線繞組置於該園壁之頂部分上面i Μ及 一画筒形邊天線換組圍著該圜壁之邊部分捲撓。 66. 如申請專利範圍第63項之反應器，其中該圍壁包含電 ^ 1裝 、»泠 (請先閱讀背面之注意事項再填寫本頁) 95 ο 3 2 QV 6 CO ABC0 經濟部中央標隼局員工消費合作社印裝 κ、申請專利範圍 分開之諸部分*此等部分包含一中央部分和一邊部分 ，以及分開之接頭用Μ醱用分開之射頻電位至圍壁之 該分開諸部分。 67. 如申請專利範園第66項之反應器，其中該分開之圍壁 諸部分係各鄰近工件之不同之各自之徑向位置。 68. 如申請專利範圍第66項之反暱器，其中該分開之圍壁 諸部分包含： 一内圓盤形頂部分； 一外環帶頂部分。 69. 如申請專利範圍第68項之反應器，其中該圍壁邊部分 與該外環帶頂部分接合。 70. 如申請專利範園第68項之反應器，其中該圍壁邊部分 係自該外環帶頂部分霄分開，並包含該分開之圍壁諸 部分之另一部分。 71. 如申請專利範園第54項之反應器，其中置於該围壁之 頂部分上面者大致悌思平形狀，以及該感臁天線係與 其一致形狀。 72. 如申請專利範圍第54項之反應器，其中置於該園壁之 頂部分上面者係麵頂形狀。 73. 如申請專利範圍第72項之反醮器，其中該感臁天線係 與該園壁之圓頂形頂部分一致。 74 .如申請專利範圍第73項之反醮器，其中該圚頂形之頂 部分有一多半徑鼷頂形狀之有一最大半徑在其周邊Μ 及一最小半徑在其内部者。 明中S國家嘌搫ί CNS、Λ4妒咯 :U) &lt; 公f Ϊ. In— I - ---( ml ffm« n —A— nn tn «flu- ^in - 1— tn HAi tmv nn (請先閱讀背面之注意事項再填寫本頁) 96ABCD Ministry of Economic Affairs, China Bureau of Standards and Staff, Consumer Cooperation Du Yin ^ τ'Applicable patent scope A pump ring is adjacent to the periphery of one side of the semiconducting window; a pump is connected to the pump drying ring; and wherein the channel extends through The side portion of the semiconductor window extends from the plaque to the pump W annulus. 29. If the reactor of patent application No. 27 is included, a protective encapsulation dam surrounds each magnet. 3Q • For example, the 28th item of the patent application includes a magnet cooler, which is in thermal contact with at least one tilt of the magnet. For example, the anti-pump device of item 27 of the patent application park also includes a removable pad covering one of the inner surfaces of the pump W annulus. 32. If the counterfeit device of item 31 of the patent application scope, it also includes a pad cooler &gt; in thermal contact with the removable pad. 33. The reactor according to item 24 of the patent application scope, wherein the gas inlet system includes a plurality of gas turtle inlets that meet the semi-conducting crocodile window. 34. The reactor as claimed in item 33, in which the multi-valve inlet can be controlled unicastly and placed above the different radial positions of the workpiece to reflect the different radial positions of the workpiece separately The plasma condition above. 35. An anti-nickel device as claimed in item 24 of the patent scope, in which the inductive antenna includes electrically separated sub-antenna portions adjacent to different radial positions of the workpiece. 36. The reactor as claimed in item 25 of the patent scope, in which the sub-antenna part of the europium contains: an inner antenna flex group> placed on the top part of the semiconducting window, binding (please read the notes on the back first (Fill in this page again) 91 309692 A8 B8 C8 D8 Yin Xian VI, Employee Consumer Cooperative of the Ministry of Economic Affairs of the Ministry of Economic Affairs, applied for patents and placed on the central part of the workpiece; and an outer loop antenna part, placed in the semiconductor window Above the top part * and above the peripheral ring part of the workpiece. 37. The reactor according to item 26 of the patent application scope, wherein the divided sub-antenna part includes a top antenna winding placed on the top part of the semiconducting metal window; and a circle of cylindrical side antenna antenna sets, encircling The side of the semi-conducting lip is curled. 38 _ For example, the reactor of Patent Application No. 25, wherein the semiconducting window contains electrically separated parts, and these parts include a central part and a side part. M and individual joints are applied with different RF potentials to M The separate parts of the semiconducting window. 39. For example, the counterfeit device in item 38 of the patent specification No. 38, in which the separated semi-conducting Qiang Miaokou parts are adjacent to the workpiece at different radial positions. 40. For example, the application of the reactor in Item 38 of the Lifan Garden, in which the divided semiconducting «window parts include: an inner disc-shaped top part; an outer ring with a top part. 41. An anti-inverter as claimed in item 40 of the patent application, wherein the semiconductor window edge portion is joined to the outer ring top portion. 42. The reactor as claimed in item 40 of the patent application, wherein the side portion of the semi-conducting skull window is electrically separated from the top portion of the outer annulus * and contains the other inclination of the separated semi-conducting mule window portion. &amp; Paper. ¾ 尺 t, ϋϋ Threshold Sealing Dragon :: Λ4Θ. slightly. ::! ◦ 'Gong t: _ Q9 --------------------- order ----- silver (please read the precautions on the back before filling this page) Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives ^ A8 B8 C8, patent application scope 43. For example, the reactor of claim 24, where the one placed above the top part of the semiconducting window is generally mediocre, M and the The induction antenna is in a consistent shape. 44. As the reverse device of the 24th item of the patent application scope, wherein the one placed above the top part of the semiconducting snake window is in the shape of a dome. 45. The reactor as claimed in item 44 of the patent application, wherein the inductive antenna is in the same shape as the dome-shaped top portion of the semiconducting window. 46_ The reactor as described in patent application No. 45, in which the top of the top shape of the figure has a multi-radius national top shape with a maximum radius in its periphery and a minimum radius in its interior. 47 ·-The RF plasma anti-nickel device used to process a symplectic conductor wafer, and contains an entire non-golden hurricane wall, using M to define the engraved slurry in an application area above the crystal H. 48. The reactor as claimed in item 47 of the patent application, wherein the non-metallic painting wall contains a semiconducting scorpion. 49. The reactor as claimed in item 48 of the patent application scope, in which the non-golden enclosure wall contains a small dielectric substance. 50. The reactor as claimed in Article 48 of the patent application, wherein the semiconductor material contains one of the first-grade materials containing silicon and silicon iodide. 51. A reactor as claimed in claim 49 of the patent scope, in which the dielectric substance contains one of silicon nitride, aluminum nitride, quartz and alumina. 52. If the anti-collision device of the 49th scope of the patent application, it also includes an electrical connector connected to the surrounding wall for «to use a small position to the place, the impact of its male son --------- Outfit --- Order (please read the precautions on the back before filling out this page) 93 AS B8 C8 D8 Printed by the Ministry of Economic Affairs of the Falcon Bureau Employee Consumer Cooperatives 3〇9692 Patent application scope »to promote continuous The reason. 53. The reactor as claimed in item 49 of the scope of patent application also includes a heater and a cooler heat W connected to the wall. 54. The reactor as claimed in item 53 of the patent application, in which the surrounding wall includes the top portion and the encapsulated edge portion which are separated by the upper part, Μ and the heater and the cooler therein include separately controllable heating And the cooling element pair, thermally coupled to each of the top and side portions of the surrounding wall. 55. If the anti-prosthesis device of the 47th scope of the patent application, it also includes: a channel passing through the non-golden wall * The channel contains one of the following three items: U) — 晶 Η slotted valve hole, (b) —Pump ring with holes, U) —Gas inlet; and multiple slurries restrict the magnetic male adjacent to the channel. 56. The reactor as claimed in item 45 of the patent application, in which the channel contains a pump "P-ring with holes, and the reactor further includes: a pumping ring is adjacent to the periphery of one of the walls of the non-golden garden, a pump is connected To the pumping belt; and where the passage extends through the non-metallic enclosure wall, from the treatment zone to the pump W belt. 57. For example, the reactor of patent application No. 46 * also includes an anti-encapsulation layer around each magnetic field. 58 If the reactor of patent application No. 46 is included, it also includes a magnetic male cooler. * It is in thermal contact with at least one tilt of the magnet. -----------— 装 ---- 一 OJ_ *** I ^ (Please read the precautions on the back before filling in this page) Printed by the Ministry of Economic Affairs, Central Standards Bureau, Xinggong Consumer Cooperative Society A8 B8 C8 — D8 ^, patent application scope 59 _ For example, the reactor of patent application scope item 45, also includes a removable cover to cover the inner surface of one of the pump W belts. 6〇. If the application of the patent Fan Garden item 59 reverse device, also contains a pad «cooler and the removable pad moraine is in thermal contact. 61. If the anti-bumper of the 47th application of the Patent Fan Garden, it also contains a multi-bias gas inlet through the wall. 62. For example, the reactor of patent application No. 61, in which the multi® gas inlet can be controlled independently and adjacent to different radial positions of the workpiece, for single influence on the different radial positions of the workpiece Engraved condition Ο 63 _ Like the reactor of claim 62, wherein the inductive antenna includes electrically separated sub-antenna sections, adjacent to the workpiece at different radial positions. 64. The reactor as claimed in item 63 of the patent scope, wherein the separated sub-antenna part includes: an inner antenna flex group placed on the top part of the wall and above the central part of the workpiece; and an outer loop antenna The part is placed above the top part of the surrounding wall and above the peripheral ring part of the workpiece. 65. The reactor as claimed in item 64 of the patent application park, wherein the separated sub-antenna part includes: a top antenna winding placed on the top part of the wall and a revolving group of antennas around the circle surrounding the circle The edge of the wall is partially curled. 66. For example, the reactor under item 63 of the scope of patent application, in which the surrounding wall contains electrical equipment, »Ling (please read the precautions on the back before filling this page) 95 ο 3 2 QV 6 CO ABC0 Central Standard of the Ministry of Economic Affairs Falcon Bureau Consumer Cooperative Printed Kappa, Parts for Separating the Scope of Patent Application * These parts include a central part and a side part, and the separate joints are separated by a radio frequency potential to the separate parts of the wall. 67. A reactor as claimed in item 66 of the patent application park, in which the parts of the divided wall are different radial positions of adjacent workpieces. 68. The anti-nickel device as claimed in item 66 of the patent scope, wherein the parts of the divided wall include: an inner disc-shaped top part; an outer ring with a top part. 69. A reactor as claimed in item 68 of the patent application, wherein the peripheral wall portion is joined to the outer ring belt top portion. 70. A reactor as claimed in item 68 of the patent application park, wherein the side wall portion is separated from the top portion of the outer annulus and contains another part of the divided wall portions. 71. The reactor as claimed in Item 54 of the Patent Application Park, in which the top part of the surrounding wall is roughly flat and the sensor antenna conforms to its shape. 72. The reactor as claimed in item 54 of the patent application, in which the top part of the wall is the top shape. 73. As the anti-conformer in the 72nd range of the patent application, the sense antenna is consistent with the dome-shaped top part of the garden wall. 74. An anti-prone device as claimed in item 73 of the patent scope, wherein the top part of the apex shape has a multi-radius shape with a maximum radius at its periphery M and a minimum radius at its inside. In the Ming Dynasty, S countries purged CNS, Λ4 jealousy: U) &lt; public f Ϊ. In— I---- (ml ffm «n —A— nn tn« flu- ^ in-1— tn HAi tmv nn (Please read the notes on the back before filling this page) 96 i、申請專利範圍 經濟部中失.標隼局員工消费合作钍印11 75. 如申請專利範園第47項之反®器，另包含一晶Η基座 ，用以支承供在反應器内作處理之一半導體晶片，以 及其中該函壁包含一中央圍壁件，和一邊圍壁件自該 中央圍壁件霄絕緣，該反應器另包含： 第一和第二射頻霣源分別地瞄接至該中央園壁件 ，邊圍壁件和該基座中之兩値，該第一和第二射頻電 源別地Μ第一和第二射頻頻率提供射頻功率；以及 射頻濾波器，用Μ自另一傾之射頻頻率絕緣每一 該第一和第二射頻電源。 76. 如申請專利範圍第47項之反醮器，另包含： 至少一艟通道經遇該圍壁。 77·如申請專利範園第76項之反醮器，另包含： 一電漿限制磁鐵鄰近該通道。 78.如申請専利範園第76項之反應器，其中該通道有一狹 窄寬离比，用以促進該通道内之霣漿之再組合。 ?9·如申請專利範園第76項之反醮器，其中該通道提供一 婉曲路線*用Μ促進該通道内之電漿之再組合。 8〇·~種在一射頻電漿反應器内處理一半導驩晶片之方法 ，此反*器有一底座用Μ支承此晶片於反匾器之室内 者*該方法包含： 提供一圍壁，用Μ限制霄漿在室之一處理區内該 晶Η之上面； 防止Μ霄漿處理之產物之澱積於園壁上。 81.如申請專利範圍第8〇項之方法，其中防止醱積之步驟 太紙 ；C\s ' Λ4ΐΜ.^ ：ν ：；〇 χ ：g^-^ t ' n^— ^^^^1 —f^i mfl flu— ffm If inv flm ·111 m nn - n —^ϋ * {請先閱讀背面之注意事項再填寫本頁} 97 A 8 B8 C8 D8 309692 、申請專利範圍 包含下列各項之至少一項： U)保持围壁之溫度高於一臨界凝结溫度；以及 (b)醮用一射頻霣位至該園壁，以促進該園壁在 該晶片之霣漿處理中之«射。 82.如申請專利範園第81項之方法，其中此防止濺積之步 鼸包含U)和（b&gt;兩者。 83·如申請專利範圖第80項之方法，其中該反應器包含一 通道經過該圍壁，該通道包含下列三項之一 ：（a) — 晶Η開縫閥孔，（b&gt; —泵晒環帶孔，（c) 一氣鼸入口， 該方法另包含： 防止充電粒子自該處理匾通過該通道之洩漏。 84. 如申請專利範圍第83項之方法，其中防止充«粒子通 過該通道排洩之步驟包含收缠該通道或至少下列兩棰 狀況之一： U〉一決窄_道，Μ及 (b〉一婉曲溝道。 85. 如申請專利範圍第83項之方法，其中防止充電粒子通 遇該通道排洩之步驟包含： 放置霣漀限制磁雄鄭近該通道》 86·如申請專利範圍第85項之方法，其中該霣漀限制磁鐵 包含一對相互面向之磁鐵镄越該孔，並有其磁極成直 線對準，Μ便能對移動通過該通道之充霣粒子傳送一 n - I I m n - - nt I n I I I I —I— ^ J II n _ n ϋ . 氣 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消费合作社印繁i. The scope of the patent application is lost. The Ministry of Economy, Consumer Standards, and Consortium of the Falcon Bureau 11 75. For example, the patent application of the 47th Fan Park, also includes a crystal Η base, used to support the reactor A semiconductor wafer for processing, and wherein the letter wall includes a central wall member, and one side wall member is insulated from the central wall member, and the reactor further includes: the first and second radio frequency sources respectively aim Connected to the central wall member, the side wall member and the base of the base, the first and second RF power sources separately provide the RF power at the first and second RF frequencies; and the RF filter, using M Each of the first and second RF power sources is insulated from the other RF frequency. 76. If the counterfeit device of the 47th scope of the patent application, it also includes: At least one stern channel meets the surrounding wall. 77. If the counterfeit device of patent application No. 76 is included, it also includes: a plasma restricting magnet adjacent to the channel. 78. For example, the application of the reactor in Item 76 of the Fanli Garden, in which the channel has a narrow width-to-width separation ratio to promote the recombination of the maize slurry in the channel. 9. As in the counterfeit device of patent application No. 76, where the channel provides a graceful route * use M to promote the recombination of the plasma in the channel. 8〇 ~~ A method for processing half of the wafers in an RF plasma reactor. The reflector has a base that supports the wafer in the chamber of the reflector. The method includes: providing a wall, using M restricts the slurry on top of the crystal H in one of the treatment areas of the chamber; prevents the deposition of the product of the slurry treatment on the wall. 81. The method as claimed in item 80 of the patent scope, wherein the step of preventing the accumulation is too papery; C \ s 'Λ4ΙΜ. ^: Ν :; 〇χ: g ^-^ t' n ^ — ^^^^ 1 —F ^ i mfl flu— ffm If inv flm · 111 m nn-n — ^ ϋ * {Please read the precautions on the back before filling out this page} 97 A 8 B8 C8 D8 309692, the scope of patent application includes the following At least one item: U) keeping the temperature of the surrounding wall higher than a critical condensation temperature; and (b) using a radio frequency antenna to the wall to promote the injection of the wall in the process of engraving the wafer. 82. The method according to item 81 of the patent application park, wherein the step of preventing splashing contains U) and (b &gt; both. 83. The method according to item 80 of the patent application example, wherein the reactor contains a The channel passes through the surrounding wall, and the channel contains one of the following three items: (a) — Jing H slotted valve hole, (b> — pump ring with hole, (c) one gas inlet, the method also includes: preventing charging The leakage of particles from the treatment plaque through the channel. 84. The method as claimed in item 83 of the patent application, wherein the step of preventing the discharge of particles through the channel includes entanglement of the channel or at least one of the following two conditions: U> A narrow channel, Μ and (b) a gracefully curved channel. 85. The method as claimed in item 83, wherein the step of preventing charged particles from draining through the channel includes: placing an upper limit to restrict the magnetic hero Zheng Jinzi "Channel" 86. As in the method of claim 85, where the limit magnet includes a pair of magnets facing each other crossing the hole, and its magnetic poles are aligned in line, M can move through the channel Energetic particles send an n-II mn --nt I n I I I I —I— ^ J II n _ n ϋ. Qi (please read the precautions on the back before filling this page) Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs 經濟部中夬標準局員工消費合作社印製 、申請專利範圍 側向加速。 87.如申謓專利範園第S5項之方法，另包含提供防護包封 圈撓每一霣漿限制磁鐵。 88_如申請專利範匾第85項之方法，另包含冷郤該電漿限 制磁雄。 89. 如申請專利範圍第85項之方法，其中該反應器有一抽 空泵Μ及一泵唧環帶包圍該圍壁之一周邊，以及一孔 通遇該圍壁，用以容許氣饈自該處理區滾動至該泵嚅 環帶*該方法另包含： 提供一墊襯在該泵晒環帶之内表面上面；以及 促使已進入泵唧環帶之霉漿處理之副產物之凝結 在該墊欲上。 90. 如申請專利範園第89項之方法，其中促使凝結之步驟 包含保持該墊期之溫度低於一臨界凝結S度。 91. 如申請專利範圍第8〇項之方法，其中該團壁係半導龌 物質所裂成，以及其中該方法另包含： 耩合霣漿射頻源功率通遇該園壁進入該處理匾。 92. 如申請專利範圍第85項之方法*其中該反臁器另包括 一感臁線圈鄰近該圍壁之内表面*以及其中耩合電漿 射頻功率之步《包含感®式地讲合霣漿射頻源功率自 該感醮線圈通過該園壁。 93. 如申請專利範圍第92項之方法，其中感醮式地鍋合之 步驟包含感應式地耩合不同量之射頻功率*通過以該 晶片為準之圍壁之不同徑向位置。 中屬JJ家漂隼（CNS ) 規洛：公縻） I 1 線 (請先閲讀背面之注意事項再填寫本頁) 99 A8 B8 C8 D8 申請專利範圍 94.如申請專利範圍第93項之方法*另包含應用不同射頻 區 向 徑 同 之 壁 圍 該 至 位 電 (請先閱讀背面之注意事項再填寫本頁) 裝--- 訂 線 經濟部中夬標準局員工消f合作社印製 Μ氏浪义度適用由SS家嘌准、CNS \ .\4吨略_ 2丨0、公f 100The printing and patent application scopes of employees' consumer cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs are accelerating laterally. 87. The method of item S5 of the Shenfan Patent Fan Garden also includes the provision of a protective enveloping ring to flex each magnetized limit magnet. 88_ The method of applying for patent patent plaque item 85 also includes cooling the plasma to limit the magnetic male. 89. The method as claimed in item 85 of the patent application, wherein the reactor has an evacuation pump M and a pump hoop to surround a periphery of the surrounding wall, and a hole meets the surrounding wall to allow the gas to escape from the wall The treatment area scrolls to the pump belt * The method further includes: providing a pad on the inner surface of the pump belt; and causing the by-products of the mold slurry treatment that has entered the pump belt to condense on the pad Desire. 90. The method as claimed in item 89 of the patent application park, wherein the step of promoting coagulation includes maintaining the temperature of the mat period below a critical coagulation S degree. 91. The method as claimed in item 80 of the patent application, in which the mass wall is split by a semiconducting substance, and in which the method further comprises: 逩 合 霣 RF source power meets the garden wall and enters the treatment plaque. 92. The method as claimed in item 85 of the patent scope * wherein the reflector further includes a sensing coil adjacent to the inner surface of the surrounding wall * and the step of incorporating plasma RF power The power of the plasma RF source passes through the wall from the sensing coil. 93. As in the method of claim 92, where the step of inductive grounding involves inductively blending different amounts of RF power * through different radial positions of the surrounding wall subject to the wafer. Chinese JJ Family Falcon (CNS) Guluo: Gongzhu) I 1 line (please read the precautions on the back before filling in this page) 99 A8 B8 C8 D8 Patent application scope 94. If you apply for patent scope item 93 * It also includes the use of different radio frequency zones with the same wall to surround the place (please read the precautions on the back and then fill out this page). Installation --- Printed by M. Co. The wave degree is applicable to SS home purifier, CNS \. \ 4 tons slightly _ 2 丨 0, public f 100
TW85114031A 1996-02-02 1996-11-15 Parallel plate electrode plasma reactor having an inductive antenna coupling power through a parallel plate electrode TW309692B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387400B (en) * 2008-10-20 2013-02-21 Ind Tech Res Inst Plasma system
TWI667944B (en) * 2014-07-03 2019-08-01 美商應用材料股份有限公司 Showerhead having a detachable high resistivity gas distribution plate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387400B (en) * 2008-10-20 2013-02-21 Ind Tech Res Inst Plasma system
TWI667944B (en) * 2014-07-03 2019-08-01 美商應用材料股份有限公司 Showerhead having a detachable high resistivity gas distribution plate

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