TW229325B - - Google Patents

Info

Publication number
TW229325B
TW229325B TW082106685A TW82106685A TW229325B TW 229325 B TW229325 B TW 229325B TW 082106685 A TW082106685 A TW 082106685A TW 82106685 A TW82106685 A TW 82106685A TW 229325 B TW229325 B TW 229325B
Authority
TW
Taiwan
Prior art keywords
reactor
rare earth
erbium
doped
pump
Prior art date
Application number
TW082106685A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW229325B publication Critical patent/TW229325B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H01L21/205—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW082106685A 1992-08-31 1993-08-19 TW229325B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/940,416 US5322813A (en) 1992-08-31 1992-08-31 Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition

Publications (1)

Publication Number Publication Date
TW229325B true TW229325B (zh) 1994-09-01

Family

ID=25474795

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082106685A TW229325B (zh) 1992-08-31 1993-08-19

Country Status (11)

Country Link
US (3) US5322813A (zh)
EP (1) EP0586321B1 (zh)
JP (1) JPH0785467B2 (zh)
KR (1) KR970008339B1 (zh)
CN (3) CN1054234C (zh)
AT (1) ATE166491T1 (zh)
CA (1) CA2095449C (zh)
DE (1) DE69318653T2 (zh)
ES (1) ES2116426T3 (zh)
MX (1) MX9305267A (zh)
TW (1) TW229325B (zh)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873549A (en) * 1987-03-03 1989-10-10 Mita Industrial Co., Ltd. Device for detecting the life of an image forming process unit, opening of a seal of the unit and attachment of the unit to an image forming apparatus
DE69323884T2 (de) * 1993-10-20 1999-07-22 Cons Ric Microelettronica Elektrolumineszente Festkörpervorrichtung und Verfahren zu ihrer Herstellung
US6093246A (en) * 1995-09-08 2000-07-25 Sandia Corporation Photonic crystal devices formed by a charged-particle beam
US5976941A (en) * 1997-06-06 1999-11-02 The Whitaker Corporation Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates
US6130471A (en) * 1997-08-29 2000-10-10 The Whitaker Corporation Ballasting of high power silicon-germanium heterojunction biploar transistors
US6040225A (en) * 1997-08-29 2000-03-21 The Whitaker Corporation Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices
KR100377716B1 (ko) * 1998-02-25 2003-03-26 인터내셔널 비지네스 머신즈 코포레이션 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법
EP1131611A4 (en) 1998-06-29 2003-01-02 Univ State San Diego METHOD AND DEVICE FOR DETERMINING HYDROCARBON COMPOUNDS AND THEIR APPLICATIONS THEREOF
US6140669A (en) * 1999-02-20 2000-10-31 Ohio University Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission
US6143072A (en) * 1999-04-06 2000-11-07 Ut-Battelle, Llc Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate
US6255669B1 (en) * 1999-04-23 2001-07-03 The University Of Cincinnati Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element
KR100510996B1 (ko) * 1999-12-30 2005-08-31 주식회사 하이닉스반도체 선택적 에피텍셜 성장 공정의 최적화 방법
US6519543B1 (en) * 2000-05-09 2003-02-11 Agere Systems Inc. Calibration method for quantitative elemental analysis
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
KR100384892B1 (ko) * 2000-12-01 2003-05-22 한국전자통신연구원 에르븀이 도핑된 실리콘나노점의 형성 방법
US6894772B2 (en) * 2001-02-12 2005-05-17 Analytical Spectral Devices System and method for grouping reflectance data
US6853447B2 (en) * 2001-02-12 2005-02-08 Analytical Spectral Devices, Inc. System and method for the collection of spectral image data
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US6771369B2 (en) * 2002-03-12 2004-08-03 Analytical Spectral Devices, Inc. System and method for pharmacy validation and inspection
WO2004066345A2 (en) * 2003-01-22 2004-08-05 Group Iv Semiconductor Inc. Doped semiconductor nanocrystal layers and preparation thereof
US7440180B2 (en) * 2004-02-13 2008-10-21 Tang Yin S Integration of rare-earth doped amplifiers into semiconductor structures and uses of same
US7163878B2 (en) * 2004-11-12 2007-01-16 Texas Instruments Incorporated Ultra-shallow arsenic junction formation in silicon germanium
CN100385693C (zh) * 2005-08-18 2008-04-30 中国科学院半导体研究所 用等离子体处理提高硅基晶体薄膜发光的方法
DE102006031300A1 (de) * 2006-06-29 2008-01-03 Schmid Technology Systems Gmbh Verfahren zur Dotierung von Siliziummaterial für Solarzellen, entsprechend dotiertes Siliziummaterial und Solarzelle
US20080138955A1 (en) * 2006-12-12 2008-06-12 Zhiyuan Ye Formation of epitaxial layer containing silicon
KR101802124B1 (ko) * 2008-06-05 2017-11-27 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 란탄족 함유 전구체의 제조 및 란탄족 함유 필름의 증착 방법
US8269253B2 (en) * 2009-06-08 2012-09-18 International Rectifier Corporation Rare earth enhanced high electron mobility transistor and method for fabricating same
CN102828242B (zh) * 2012-09-06 2015-05-27 西安隆基硅材料股份有限公司 含有下转换发光量子点的晶体硅及其制备方法
US9481917B2 (en) * 2012-12-20 2016-11-01 United Technologies Corporation Gaseous based desulfurization of alloys
WO2015017395A1 (en) * 2013-07-30 2015-02-05 Board Of Regents, The University Of Texas System Sample transfer to high vacuum transition flow
US9850573B1 (en) 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US10364259B2 (en) * 2016-12-30 2019-07-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
GB201812765D0 (en) * 2018-08-06 2018-09-19 Univ London Queen Mary Substrate layer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity
US4618381A (en) * 1983-05-26 1986-10-21 Fuji Electric Corporate Research And Development Ltd. Method for adding impurities to semiconductor base material
DE3319134A1 (de) * 1983-05-26 1985-05-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München Optoelektronisches bauelement, insbesondere eine laserdiode oder eine leuchtdiode
US4800173A (en) * 1986-02-20 1989-01-24 Canon Kabushiki Kaisha Process for preparing Si or Ge epitaxial film using fluorine oxidant
US4826288A (en) * 1987-04-09 1989-05-02 Polaroid Corporation, Patent Department Method for fabricating optical fibers having cores with high rare earth content
US5248890A (en) * 1989-05-13 1993-09-28 Forschungszentrum Julich Gmbh Valance specific lanthanide doped optoelectronic metal fluoride semiconductor device
US5296048A (en) * 1989-05-31 1994-03-22 International Business Machines Corporation Class of magnetic materials for solid state devices
FR2650704B1 (fr) * 1989-08-01 1994-05-06 Thomson Csf Procede de fabrication par epitaxie de couches monocristallines de materiaux a parametres de mailles differents
JPH042699A (ja) * 1990-04-18 1992-01-07 Mitsubishi Electric Corp 結晶成長方法
US5119460A (en) * 1991-04-25 1992-06-02 At&T Bell Laboratories Erbium-doped planar optical device
US5107538A (en) * 1991-06-06 1992-04-21 At&T Bell Laboratories Optical waveguide system comprising a rare-earth Si-based optical device
US5511946A (en) * 1994-12-08 1996-04-30 General Electric Company Cooled airfoil tip corner

Also Published As

Publication number Publication date
ES2116426T3 (es) 1998-07-16
US5322813A (en) 1994-06-21
CN1255735A (zh) 2000-06-07
CN1255736A (zh) 2000-06-07
CA2095449C (en) 1997-09-16
DE69318653T2 (de) 1999-02-04
KR940004714A (ko) 1994-03-15
CN1054234C (zh) 2000-07-05
CA2095449A1 (en) 1994-03-01
KR970008339B1 (ko) 1997-05-23
EP0586321A3 (en) 1996-03-27
CN1114225C (zh) 2003-07-09
CN1085353A (zh) 1994-04-13
US5646425A (en) 1997-07-08
EP0586321A2 (en) 1994-03-09
DE69318653D1 (de) 1998-06-25
ATE166491T1 (de) 1998-06-15
EP0586321B1 (en) 1998-05-20
US5534079A (en) 1996-07-09
JPH0785467B2 (ja) 1995-09-13
JPH06177062A (ja) 1994-06-24
CN1117389C (zh) 2003-08-06
MX9305267A (es) 1994-02-28

Similar Documents

Publication Publication Date Title
TW229325B (zh)
US5354387A (en) Boron phosphorus silicate glass composite layer on semiconductor wafer
JP2848647B2 (ja) 有機珪素化合物と三弗化窒素を用いた珪素含有被膜の製法
EP0440154B1 (en) Two step process for forming an oxide layer over a stepped surface of a semiconductor wafer
US4588610A (en) Photo-chemical vapor deposition of silicon nitride film
US4975144A (en) Method of plasma etching amorphous carbon films
Duchemin et al. Kinetics of silicon growth under low hydrogen pressure
US6596343B1 (en) Method and apparatus for processing semiconductor substrates with hydroxyl radicals
KR970052913A (ko) 인-시튜 sacvd와 pecvd 실리콘 산화막 사이의 강한 인터페이스 형성 방법
EP0421203B1 (en) An integrated circuit structure with a boron phosphorus silicate glass composite layer on semiconductor wafer and improved method for forming same
US7273525B2 (en) Methods for forming phosphorus- and/or boron-containing silica layers on substrates
US5902651A (en) Method of reducing carbon incorporation into films produced by chemical vapor deposition involving titanium organometallic and metal-organic precursor compounds
JP2013532386A (ja) 結晶ゲルマニウムのプラズマ化学気相堆積
US4716050A (en) Chemical vapor deposition of aluminum on an activated surface
Alexandrov et al. Formation of silicon nitride films by remote plasma‐enhanced chemical vapour deposition
US5380399A (en) Method of treating semiconductor substrates
JPS5884111A (ja) ケイ素の改良されたプラズマ析出法
EP0227839A1 (en) Method of forming a thin film
US5753303A (en) Process for the elimination of tungsten oxidation with inert gas stabilization in chemical vapor deposition processes
KR960036155A (ko) 피.엘.티. 박막 제조방법
JP3209167B2 (ja) 薄膜形成方法
KR950004149Y1 (ko) 기상 증착 장치
Gomez-Aleixandre et al. Silicon nitride films deposited from SiF 4/NH 3 gas mixtures
JPS60100674A (ja) 窒化膜形成方法
GB2179930A (en) A method of depositing an epitaxial silicon layer

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent