TW202239021A - Workpiece handling sheet and device manufacturing method - Google Patents
Workpiece handling sheet and device manufacturing method Download PDFInfo
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- TW202239021A TW202239021A TW111101971A TW111101971A TW202239021A TW 202239021 A TW202239021 A TW 202239021A TW 111101971 A TW111101971 A TW 111101971A TW 111101971 A TW111101971 A TW 111101971A TW 202239021 A TW202239021 A TW 202239021A
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- workpiece
- resin layer
- laser light
- aforementioned
- processing sheet
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- C—CHEMISTRY; METALLURGY
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
本發明關於為了處理半導體元件、半導體裝置等工件小片而能使用之工件處理片、及使用該工件處理片之裝置製造方法,尤其,關於為了處理微發光二極體、功率元件、MEMS(Micro Electro Mechanical Systems,微機電系統)等工件小片而能使用之工件處理片、及使用該工件處理片之裝置製造方法。The present invention relates to a workpiece processing sheet that can be used for processing small workpieces such as semiconductor elements and semiconductor devices, and a device manufacturing method using the workpiece processing sheet, especially for processing micro light emitting diodes, power elements, MEMS (Micro Electro A workpiece processing sheet that can be used for small workpieces such as Mechanical Systems, and a method for manufacturing a device using the workpiece processing sheet.
近年來,正在發展使用微發光二極體之顯示器的開發。在該顯示器中,每個像素係由微發光二極體所構成,各微發光二極體的發光係被獨立地控制。在該顯示器的製造中,一般而言,需要將配置於藍寶石、玻璃等供給基板上之微發光二極體安裝於設有配線之配線基板上。In recent years, the development of displays using micro light emitting diodes is advancing. In the display, each pixel is composed of micro-light-emitting diodes, and the light-emitting system of each micro-light-emitting diode is independently controlled. In the manufacture of such a display, generally, micro light emitting diodes arranged on a supply substrate such as sapphire or glass need to be mounted on a wiring substrate provided with wiring.
在上述安裝之際,需要將配置於供給基板上之多個微發光二極體正確地載置於配線基板的指定位置。此時,需要從多個微發光二極體之中將指定者選擇性地載置於配線基板、或亦需要同時載置多個微發光二極體。During the above-mentioned mounting, it is necessary to accurately mount the plurality of micro light-emitting diodes disposed on the supply substrate on a predetermined position of the wiring substrate. In this case, it is necessary to selectively mount a designated one among the plurality of micro light emitting diodes on the wiring board, or to simultaneously mount a plurality of micro light emitting diodes.
由良好地進行此種安裝之觀點而言,正探討利用雷射光的照射。例如,正探討在將多個微發光二極體透過指定層而保持於支撐體後,對該層照射雷射光,藉此在經該照射之位置中發生該層的燒蝕,藉此將已從支撐體分離(雷射剝離)之微發光二極體載置於配線基板之方法(專利文獻1)。雷射光因指向性及收束性優異,故容易控制照射之位置,可良好地進行選擇性的載置。 [先行技術文獻] [專利文獻] From the viewpoint of performing such mounting well, the use of irradiation with laser light has been considered. For example, after a plurality of micro light-emitting diodes are held on a support body through a predetermined layer, the layer is irradiated with laser light, whereby the ablation of the layer occurs in the irradiated position, whereby the already A method of placing micro light emitting diodes separated from a support (laser lift-off) on a wiring board (Patent Document 1). Since laser light is excellent in directivity and convergence, it is easy to control the position of irradiation, and it is possible to perform selective placement well. [Prior Art Literature] [Patent Document]
[專利文獻1]日本特許第6546278號[Patent Document 1] Japanese Patent No. 6546278
[發明所欲解決的問題][Problem to be solved by the invention]
然而,亦正在發展微發光二極體的進一步細微化、微發光二極體的更高密度的安裝等,以亦對應此等為前提,正要求一種手段,其比起如專利文獻1般的以往手法,可效率更好地處理多個微發光二極體等細微的工件小片。However, further miniaturization of micro-light emitting diodes, higher-density mounting of micro-light-emitting diodes, etc. are also being developed, and on the premise that they are also compatible with these, a means is required, which is different from that of
本發明係有鑑於此種實際狀況而完成者,其目的在於提供即使為細微的工件小片亦能良好地進行處理之工件處理片、及使用該工件處理片之裝置製造方法。 [用以解決問題的手段] The present invention was made in view of such actual conditions, and an object of the present invention is to provide a workpiece processing sheet capable of processing fine workpiece processing sheets satisfactorily, and a device manufacturing method using the workpiece processing sheet. [means used to solve a problem]
為了達成上述目的,第一,本發明提供一種工件處理片,其係具備基材與樹脂層之工件處理片,所述樹脂層積層於前述基材中之單面側且能保持工件小片,所述工件處理片的特徵在於,前述樹脂層以10質量%以上含有對於雷射光的波長具有吸收性之雷射光吸收成分,前述樹脂層藉由前述雷射光的照射而進行全燒蝕(發明1)。In order to achieve the above object, first, the present invention provides a workpiece processing sheet, which is a workpiece processing sheet having a base material and a resin layer, the resin layer is laminated on one side of the base material and can hold a small workpiece, so The workpiece processing sheet is characterized in that the resin layer contains at least 10% by mass of a laser light absorbing component absorbing the wavelength of laser light, and the resin layer is completely ablated by irradiation of the laser light (Invention 1) .
上述發明(發明1)之工件處理片,藉由樹脂層以上述之量含有對於雷射光的波長具有吸收性之雷射光吸收成分,而在已照射雷射光之情形中有效地進行全燒蝕,藉此可將工件小片朝向對象物良好地分離。In the workpiece processing sheet of the above-mentioned invention (Invention 1), the total ablation is effectively performed when the laser light is irradiated by the resin layer containing the laser light-absorbing component having absorption properties at the wavelength of laser light in the above-mentioned amount, In this way, the workpiece small pieces can be well separated toward the target object.
第二,本發明提供一種工件處理片,其係具備基材與樹脂層之工件處理片,所述樹脂層積層於前述基材中之單面側且能保持工件小片,所述工件處理片的特徵在於,前述樹脂層含有對於雷射光的波長具有吸收性之雷射光吸收成分,在將前述樹脂層中的前述雷射光吸收成分的含量設為X質量%且將前述樹脂層的厚度設為Yμm之情形中,將X除以Y之値(X/Y)為2.0以上(發明2)。Second, the present invention provides a workpiece processing sheet, which is a workpiece processing sheet having a base material and a resin layer, the resin layer is laminated on one side of the base material and can hold a small workpiece, and the workpiece processing sheet It is characterized in that the above-mentioned resin layer contains a laser light-absorbing component having absorptivity to the wavelength of laser light, where the content of the above-mentioned laser light-absorbing component in the above-mentioned resin layer is X mass % and the thickness of the above-mentioned resin layer is Y μm In this case, the value of dividing X by Y (X/Y) is 2.0 or more (invention 2).
上述發明(發明2)之工件處理片,藉由樹脂層以滿足與樹脂層的厚度相關之上述條件之方式含有對於雷射光的波長具有吸收性之雷射光吸收成分,而在已照射雷射光之情形中有效地進行全燒蝕,藉此可將工件小片朝向對象物良好地分離。In the workpiece processing sheet of the above-mentioned invention (Invention 2), the resin layer contains a laser light-absorbing component that absorbs the wavelength of laser light so that the resin layer satisfies the above-mentioned conditions related to the thickness of the resin layer. In this case, total ablation is effectively performed, whereby the workpiece small pieces can be well separated toward the target object.
上述發明(發明1、2)中,較佳為前述雷射光吸收成分為紫外線吸收劑及光聚合起始劑的至少一種(發明3)。In the above inventions (
上述發明(發明3)中,較佳為前述紫外線吸收劑為有機化合物(發明4)。In the above invention (Invention 3), it is preferable that the ultraviolet absorber is an organic compound (Invention 4).
上述發明(發明3、4)中,較佳為前述紫外線吸收劑為具有1個以上的雜環之化合物(發明5)。In the above inventions (
上述發明(發明3~5)中,較佳為前述紫外線吸收劑具有碳環及雜環的至少一種,前述紫外線吸收劑所具有之全部的前述碳環及前述雜環分別為單環(發明6)。In the above inventions (
上述發明(發明3~6)中,較佳為前述紫外線吸收劑為具有多個芳香環之化合物(發明7)。In the above inventions (
上述發明(發明1~7)中,較佳為前述樹脂層為黏著劑層(發明8)。In the above inventions (
上述發明(發明8)中,較佳為構成前述黏著劑層之黏著劑為丙烯酸系黏著劑(發明9)。In the above invention (Invention 8), it is preferable that the adhesive constituting the adhesive layer is an acrylic adhesive (Invention 9).
上述發明(發明1~9)中,較佳為前述雷射光為具有紫外線區的波長者(發明10)。In the above inventions (
上述發明(發明1~10)中,較佳為係為了藉由在前述樹脂層中局部發生之全燒蝕而從前述樹脂層選擇性地分離保持於前述樹脂層中之與前述基材相反的面上之多個工件小片中之任意的工件小片所使用者(發明11)。In the above inventions (
上述發明(發明11)中,較佳為前述工件小片係藉由將保持於前述樹脂層中之與前述基材相反的面上之工件在該面上進行單體化而得者(發明12)。In the above invention (Invention 11), it is preferable that the workpiece piece is obtained by singulating the workpiece held on the surface of the resin layer opposite to the base material on the surface (Invention 12) .
上述發明(發明11、12)中,較佳為前述工件小片係選自半導體元件及半導體裝置之至少一種(發明13)。In the above inventions (
上述發明(發明11~13)中,較佳為前述工件小片係選自次毫米發光二極體(mini LED)及微發光二極體(micro LED)之發光二極體(發明14)。In the above inventions (Inventions 11-13), it is preferable that the aforementioned workpiece chip is a light-emitting diode selected from submillimeter light-emitting diodes (mini LEDs) and micro-light-emitting diodes (micro LEDs) (Invention 14).
第三,本發明提供一種裝置製造方法,其特徵在於,具備:準備步驟,其準備積層體,所述積層體係將多個工件小片保持於上述工件處理片(發明1~14)中之前述樹脂層側的面上而成;配置步驟,其對於能容納前述工件小片之對象物,以面對前述積層體中之前述工件小片側的面之方式配置前述積層體;以及分離步驟,其對前述積層體中之前述樹脂層中之貼附有至少一個前述工件小片之位置照射雷射光,而在前述樹脂層中之經前述照射之位置發生全燒蝕,藉此從前述工件處理片分離存在於該全燒蝕發生位置之前述工件小片,並將前述工件小片載置於前述對象物上(發明15)。Third, the present invention provides a device manufacturing method characterized by comprising: a preparatory step of preparing a layered body, the layered system holding a plurality of workpiece small pieces in the aforementioned resin in the aforementioned workpiece processing sheet (
上述發明(發明15)中,較佳為在前述準備步驟中,藉由將保持於前述樹脂層中之與前述基材相反的面上之工件在該面上進行單體化,而獲得前述工件小片(發明16)。In the above invention (Invention 15), it is preferable that, in the preparation step, the workpiece held on the surface of the resin layer opposite to the substrate is singulated on the surface to obtain the workpiece. Small tablets (invention 16).
上述發明(發明15、16)中,較佳為前述工件小片係選自半導體元件及半導體裝置之至少一種(發明17)。In the above inventions (Inventions 15 and 16), it is preferable that the workpiece chip is at least one selected from a semiconductor element and a semiconductor device (Invention 17).
上述發明(發明15~17)中,較佳為將選自次毫米發光二極體及微發光二極體之發光二極體使用作為前述工件小片,製造具備多個前述發光二極體之發光裝置(發明18)。In the above-mentioned inventions (Inventions 15-17), it is preferable to use a light-emitting diode selected from submillimeter light-emitting diodes and micro-light-emitting diodes as the aforementioned workpiece chip, and to manufacture a light emitting diode having a plurality of the aforementioned light-emitting diodes. device (invention 18).
上述發明(發明18)中,較佳為前述發光裝置為顯示器(發明19)。 [發明功效] In the above invention (Invention 18), it is preferable that the light emitting device is a display (Invention 19). [Efficacy of the invention]
本發明之工件處理片,即使為細微的工件小片亦可良好地進行處理,並且,根據本發明之裝置製造方法,可製造具有優異性能之裝置。The workpiece processing sheet of the present invention can handle fine workpieces well, and according to the device manufacturing method of the present invention, a device having excellent performance can be manufactured.
[用以實施發明形態][For Embodiment of Invention]
以下,針對本發明的實施形態進行說明。
圖1中,揭示一實施形態之工件處理片的剖面圖。圖1所示之工件處理片1具備基材12與樹脂層11,所述樹脂層11積層於基材12中之單面側。
Embodiments of the present invention will be described below.
In Fig. 1, a cross-sectional view of a workpiece processing sheet according to an embodiment is disclosed. The
在本實施形態之工件處理片1中,樹脂層11能保持工件小片。亦即,本實施形態之工件處理片1可將積層於樹脂層11中之與基材12相反的面上之工件小片直接以該狀態進行保持。In the
上述保持的具體的態樣雖未被限定,但作為較佳例,可列舉藉由樹脂層11發揮對於工件小片之黏著性而進行保持。此情形,樹脂層11較佳為如同後述包含黏著劑作為構成其之成分的一者,亦即為黏著劑層。The specific aspect of the above-mentioned holding is not limited, but as a preferable example, holding by the
而且,本實施形態之工件處理片1,較佳為,樹脂層11以10質量%以上含有對於雷射光的波長具有吸收性之雷射光吸收成分,且藉由雷射光的照射而進行全燒蝕(以下,有將此等條件稱為「條件1」之情形)。Furthermore, in the
並且,本實施形態之工件處理片1,亦較佳為,樹脂層11含有對於雷射光的波長具有吸收性之雷射光吸收成分,並且,在將樹脂層11中的該雷射光吸收成分的含量設為X質量%且將樹脂層11的厚度設為Yμm之情形中,將X除以Y之値(X/Y)為2.0以上(以下,有將此等條件稱為「條件2」之情形)。In addition, in the
本實施形態之工件處理片1藉由滿足上述之條件1及條件2的至少一者,而可在已照射雷射光之情形中良好地進行全燒蝕。The
在本說明書中,所謂全燒蝕,係指藉由雷射光的能量而構成樹脂層11之成分會蒸發或揮發,藉此,樹脂層11中之經照射雷射光之部位會消失。此外,此消失之際,構成樹脂層11之成分可發生分解,或者亦可不發生分解。而且,原本存在於上述消失之位置之工件小片,會失去保持其之存在,而變得從本實施形態之工件處理片1分離。In this specification, the so-called total ablation means that the components constituting the
作為以往的工件處理片,存在有以下工件處理片:藉由雷射光的照射,而在基材與樹脂層之界面產生空隙,藉此使樹脂層膨脹,藉此使工件小片分離者。相對於此,在本實施形態之工件處理片1中,因能不發生該種樹脂層的膨脹而使工件小片分離,故在分離之際,變得能縮短工件小片與接收該工件小片之對象的距離。因此,成為使該對象與工件小片分離之際的位置精確度非常高者。As a conventional workpiece processing sheet, there is a workpiece processing sheet that generates voids at the interface between the base material and the resin layer by irradiation of laser light, thereby expanding the resin layer and separating workpiece small pieces. On the other hand, in the
再者,本實施形態之工件處理片1藉由滿足條件1或條件2且同時含有雷射光吸收成分,而樹脂層11從雷射光接收能量之效率會提升。藉此,有效地發生全燒蝕,而變得能良好地從樹脂層11分離所保持之工件小片。尤其,為了使工件小片充分地分離所需之雷射光的照射量會降低,而可減低雷射光的照射裝置的運作成本,同時變得容易良好地僅分離作為目標之工件小片,而精確度會提升,再者,亦可防止由過度的雷射光照射所導致之裝置及工件小片等的損傷。Furthermore, since the
此外,作為上述雷射光,只要能發生全燒蝕則未被特別限定,可為具有紫外線區、可見光區及紅外線區中的任一波長之雷射光,其中,較佳為具有紫外線區的波長之雷射光。In addition, as the above-mentioned laser light, it is not particularly limited as long as total ablation can occur, and it may be a laser light having any wavelength in the ultraviolet region, visible light region, and infrared region, and among them, one of the wavelengths in the ultraviolet region is preferable. laser.
1.樹脂層
本實施形態中之樹脂層11的具體的構成、組成等,只要能保持工件小片且滿足條件1及條件2的至少一者,則未被特別限定。
1. Resin layer
The specific configuration, composition, etc. of the
由容易良好地發揮能保持工件小片之性質之觀點而言,樹脂層11如同前述較佳為包含黏著劑作為構成其之成分的一者。樹脂層11包含黏著劑之情形,樹脂層11較佳為由含有雷射光吸收成分之黏著性組合物而構成者。The
(1)雷射光吸收成分 上述雷射光吸收成分雖只要為對於雷射光的波長具有吸收性之成分則未被特別限定,但較佳為紫外線吸收劑及光聚合起始劑的至少一種。 (1) Laser light absorbing components The above-mentioned laser light absorbing component is not particularly limited as long as it absorbs the wavelength of laser light, but is preferably at least one of an ultraviolet absorber and a photopolymerization initiator.
(1-1)紫外線吸收劑 上述紫外線吸收劑的種類未被特別限定。本實施形態中之紫外線吸收劑可為有機化合物,亦可為無機化合物,但由容易發生良好的全燒蝕之觀點而言,較佳為有機化合物。 (1-1) UV absorber The kind of the above-mentioned ultraviolet absorber is not particularly limited. The ultraviolet absorber in this embodiment may be an organic compound or an inorganic compound, but is preferably an organic compound from the viewpoint that good total ablation is likely to occur.
紫外線吸收劑為有機化合物之情形,作為該紫外線吸收劑的較佳例,可列舉羥基苯基三𠯤系紫外線吸收劑、二苯基酮系紫外線吸收劑、苯并三唑系紫外線吸收劑、苯甲酸系紫外線吸收劑、苯并㗁𠯤酮系紫外線吸收劑、柳酸苯酯系紫外線吸收劑、氰基丙烯酸酯系紫外線吸收劑、鎳錯鹽系紫外線吸收劑、氫醌系紫外線吸收劑、柳酸系紫外線吸收劑、丙二酸酯系紫外線吸收劑、草酸系紫外線吸收劑等化合物。此等可單獨使用一種,亦可組合二種以上而使用。In the case where the ultraviolet absorber is an organic compound, preferred examples of the ultraviolet absorber include hydroxyphenyltriazole-based ultraviolet absorbers, benzophenone-based ultraviolet absorbers, benzotriazole-based ultraviolet absorbers, benzotriazole-based ultraviolet absorbers, and benzotriazole-based ultraviolet absorbers. Formic acid-based UV absorber, benzophenone-based UV absorber, phenyl salicylate-based UV absorber, cyanoacrylate-based UV absorber, nickel zirconium salt-based UV absorber, hydroquinone-based UV absorber, willow Compounds such as acid-based ultraviolet absorbers, malonate-based ultraviolet absorbers, and oxalic acid-based ultraviolet absorbers. These may be used alone or in combination of two or more.
在上述之紫外線吸收劑之中,由在YAG的三次諧波(355nm)中具有良好的吸收性且容易發生良好的全燒蝕之觀點而言,較佳為使用羥基苯基三𠯤系紫外線吸收劑、二苯基酮系紫外線吸收劑及苯并三唑系紫外線吸收劑的至少一種,特佳為使用羥基苯基三𠯤系紫外線吸收劑。Among the above-mentioned ultraviolet absorbers, it is preferable to use the hydroxyphenyl tri-sulphur-based ultraviolet absorber from the viewpoint of good absorption in the third harmonic (355nm) of YAG and good total ablation easily. At least one of UV absorbers, diphenyl ketone-based UV absorbers, and benzotriazole-based UV absorbers, particularly preferably hydroxyphenyltriazole-based UV absorbers.
作為上述羥基苯基三𠯤系紫外線吸收劑,可列舉2-[4-(辛基-2-乙酸甲酯)氧基-2-羥基苯基]-4,6-[雙(2,4-二甲基苯基)]-1,3,5-三𠯤、2-[4-(2-羥基-3-十二烷氧基-丙基)氧基-2-羥基苯基]-4,6-[雙(2,4-二甲基苯基)-1,3,5-三𠯤、2-[4-(2-羥基-3-十三烷氧基-丙基)氧基-2-羥基苯基]-4,6-[雙(2,4-二甲基苯基)-1,3,5-三𠯤、2-(2,4-二羥基苯基)-4,6-雙-(2,4-二甲基苯基)-1,3,5-三𠯤、2-[4-(2-羥基-3-(2’-乙基)己基氧基]-2-羥基苯基]-4,6-[雙(2,4-二甲基苯基)-1,3,5-三𠯤、2,4-雙[2-羥基-4-丁氧基苯基]-6-(2,4-二丁氧基苯基)-1,3-5-三𠯤、2-(2-羥基-4-[1-辛基氧基羰基乙氧基]苯基)-4,6-雙(4-苯基苯基)-1,3,5-三𠯤、參[2,4,6-[2-{4-(辛基-2-乙酸甲酯)氧基-2-羥基苯基}]-1,3,5-三𠯤等。此等可單獨使用一種,亦可組合二種以上使用。在此等之中,較佳為使用參[2,4,6-[2-{4-(辛基-2-乙酸甲酯)氧基-2-羥基苯基}]-1,3,5-三𠯤及2-(2-羥基-4-[1-辛基氧基羰基乙氧基]苯基)-4,6-雙(4-苯基苯基)-1,3,5-三𠯤的至少一者。Examples of the above-mentioned hydroxyphenyl trioxane-based ultraviolet absorbers include 2-[4-(octyl-2-methyl acetate)oxy-2-hydroxyphenyl]-4,6-[bis(2,4- Dimethylphenyl)]-1,3,5-trimethanone, 2-[4-(2-hydroxy-3-dodecyloxy-propyl)oxy-2-hydroxyphenyl]-4, 6-[bis(2,4-dimethylphenyl)-1,3,5-trimethanone, 2-[4-(2-hydroxy-3-tridecyloxy-propyl)oxy-2 -Hydroxyphenyl]-4,6-[bis(2,4-dimethylphenyl)-1,3,5-trimethylphenyl, 2-(2,4-dihydroxyphenyl)-4,6- Bis-(2,4-Dimethylphenyl)-1,3,5-Trisyloxy]-2-[4-(2-Hydroxy-3-(2'-Ethyl)hexyloxy]-2-Hydroxy Phenyl]-4,6-[bis(2,4-dimethylphenyl)-1,3,5-trimethanone, 2,4-bis[2-hydroxy-4-butoxyphenyl]- 6-(2,4-dibutoxyphenyl)-1,3-5-trimethanone, 2-(2-hydroxy-4-[1-octyloxycarbonylethoxy]phenyl)-4 ,6-bis(4-phenylphenyl)-1,3,5-trimethanone, ginseng[2,4,6-[2-{4-(octyl-2-methyl acetate)oxy-2 -Hydroxyphenyl}]-1, 3, 5-triphenylene, etc. These can be used alone or in combination of two or more. Among them, it is preferable to use the reference [2, 4, 6- [2-{4-(octyl-2-methyl acetate)oxy-2-hydroxyphenyl}]-1,3,5-trisalpine and 2-(2-hydroxy-4-[1-octyl At least one of oxycarbonylethoxy]phenyl)-4,6-bis(4-phenylphenyl)-1,3,5-triphenyl.
並且,紫外線吸收劑為有機化合物之情形,該紫外線吸收劑,作為其化學結構上的特徵,較佳為具有1個以上的雜環之化合物。此情形,雜環的數量較佳為4個以下,特佳為1個。Furthermore, when the ultraviolet absorber is an organic compound, the ultraviolet absorber is preferably a compound having one or more heterocyclic rings as a characteristic of its chemical structure. In this case, the number of heterocycles is preferably 4 or less, particularly preferably 1.
並且,作為另一化學結構上的特徵,本實施形態中之紫外線吸收劑亦較佳為具有碳環及雜環的至少一種,同時該紫外線吸收劑所具有之全部的碳環及雜環分別為單環。And, as another chemical structural feature, the ultraviolet absorber in this embodiment preferably has at least one of carbocycle and heterocycle, and all the carbocycles and heterocycles possessed by the ultraviolet absorber are respectively single ring.
作為進一步的化學結構上的特徵,本實施形態中之紫外線吸收劑亦較佳為具有多個芳香環之化合物。此情形,芳香環的數量較佳為2個以上。並且,芳香環的數量較佳為6個以下,特佳為3個以下。As a further chemical structural feature, the ultraviolet absorber in this embodiment is also preferably a compound having a plurality of aromatic rings. In this case, the number of aromatic rings is preferably two or more. In addition, the number of aromatic rings is preferably 6 or less, particularly preferably 3 or less.
在上述之化學結構上的特徵中,各個雜環,作為構成其等之碳以外的元素,較佳為具有選自氮、氧、磷、硫、矽及硒之至少一種,特佳為具有選自氮、氧、磷及硫之至少一種。並且,構成雜環的環結構之原子的數量並無特別限定,例如為3個以上且9個以下,特佳為5個以上且6個以下。作為較佳的雜環的具體例,可列舉三𠯤、苯并三唑、噻吩、吡咯、咪唑、吡啶、吡𠯤等。Among the above-mentioned chemical structural features, each heterocycle preferably has at least one selected from nitrogen, oxygen, phosphorus, sulfur, silicon, and selenium as an element other than carbon constituting it, and particularly preferably has an element selected from At least one selected from nitrogen, oxygen, phosphorus and sulfur. Furthermore, the number of atoms constituting the ring structure of the heterocyclic ring is not particularly limited, and is, for example, 3 or more and 9 or less, particularly preferably 5 or more and 6 or less. Specific examples of preferable heterocyclic rings include trioxane, benzotriazole, thiophene, pyrrole, imidazole, pyridine, and pyridine.
並且,在上述之化學結構上的特徵中,作為芳香環的較佳例,可列舉苯、萘、蒽、聯苯、三苯等。In addition, among the aforementioned chemical structural features, preferred examples of the aromatic ring include benzene, naphthalene, anthracene, biphenyl, triphenyl, and the like.
作為具有上述之化學結構上的特徵之紫外線吸收劑的例子,可列舉具有以下的式(1)的結構之紫外線吸收劑(參[2,4,6-[2-{4-(辛基-2-乙酸甲酯)氧基-2-羥基苯基}]-1,3,5-三𠯤)。As an example of an ultraviolet absorber having the above-mentioned chemical structural characteristics, an ultraviolet absorber having a structure of the following formula (1) (see [2,4,6-[2-{4-(octyl- 2-(methyl acetate)oxy-2-hydroxyphenyl}]-1,3,5-tri-(3) ) .
[化1] [chemical 1]
本實施形態中之紫外線吸收劑較佳為在250nm以上且400nm以下的波長的範圍具有吸收峰者。藉此,變得容易發生良好的全燒蝕。The ultraviolet absorber in the present embodiment preferably has an absorption peak in a wavelength range of not less than 250 nm and not more than 400 nm. Thereby, favorable total ablation becomes easy to occur.
並且,本實施形態中之紫外線吸收劑,其波長355nm的光線的吸光度較佳為0.5以上,特佳為1.0以上,再佳為1.2以上。藉此,變得容易發生良好的全燒蝕。此外,針對上述吸光度的上限値,未被特別限定,例如可為6.0以下。In addition, the ultraviolet absorber in this embodiment preferably has an absorbance of light having a wavelength of 355 nm of 0.5 or more, particularly preferably 1.0 or more, and still more preferably 1.2 or more. Thereby, favorable total ablation becomes easy to occur. In addition, the upper limit value of the above-mentioned absorbance is not particularly limited, and may be, for example, 6.0 or less.
此外,紫外線吸收劑的上述吸收峰及上述吸光度,可製備濃度0.01質量%的乙腈溶液並使用大型試料室(例如,島津製作所公司製,產品名「MPC-3100」)所附之分光光度計(例如,島津製作所公司製,「UV-3600」)而進行測量。In addition, the above-mentioned absorption peak and the above-mentioned absorbance of the ultraviolet absorber can be obtained by preparing an acetonitrile solution with a concentration of 0.01% by mass and using a spectrophotometer ( For example, "UV-3600" manufactured by Shimadzu Corporation) is used for measurement.
(1-2)光聚合起始劑 上述光聚合起始劑的種類未被特別限定。作為較佳的光聚合起始劑的例子,較佳為使用2-二甲基胺基-2-(4-甲基苄基)-1-(4-𠰌啉基-苯基)丁烷-1-酮、乙酮,1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-,1-(0-乙醯基肟)、1,2-辛烷二酮,1-[4-(苯硫基)苯基]-,2-(O-苯甲醯基肟)、2-苄基-2-二甲基胺基-1-(4-𠰌啉基苯基)-丁酮、2-甲基-1-[4-(甲硫基)苯基]-2-𠰌啉基丙烷-1-酮的至少一種。 (1-2) Photopolymerization initiator The kind of said photopolymerization initiator is not specifically limited. As an example of a preferable photopolymerization initiator, it is preferable to use 2-dimethylamino-2-(4-methylbenzyl)-1-(4-𠰌linyl-phenyl)butane- 1-ketone, ethyl ketone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-, 1-(0-acetyloxime), 1,2-octanedione, 1-[4-(phenylthio)phenyl]-, 2-(O-benzoyl oxime), 2-benzyl-2-dimethylamino-1 At least one of -(4-alphalinylphenyl)-butanone and 2-methyl-1-[4-(methylthio)phenyl]-2-alphalinylpropan-1-one.
亦可與上述光聚合起始劑一起併用其他光聚合起始劑。作為可併用之光聚合起始劑的例子,可列舉安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香-n-丁醚、安息香異丁醚、苯乙酮、二甲基胺基苯乙酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、2,2-二乙氧基-2-苯基苯乙酮、2-羥基-2-甲基-1-苯基丙烷-1-酮、1-羥基環己基苯基酮、4-(2-羥基乙氧基)苯基-2-(羥基-2-丙基)酮、1-[4-(2-羥基乙氧基)-苯基]-2-羥基-甲基丙酮、二苯基酮、p-苯基二苯基酮、4,4’-二乙基胺基二苯基酮、二氯二苯基酮、2-甲基蒽醌、2-乙基蒽醌、2-三級-丁基蒽醌、2-胺基蒽醌、2-甲基噻噸酮、2-乙基噻噸酮、2-氯噻噸酮、2,4-二甲基噻噸酮、2,4-二乙基噻噸酮、苄基二甲基縮酮、苯乙酮二甲基縮酮、p-二甲基胺基苯甲酸酯、寡[2-羥基-2-甲基-1[4-(1-甲基乙烯基)苯基]丙酮]、2,4,6-三甲基苯甲醯基-二苯基-膦氧化物等。It is also possible to use other photoinitiators together with the said photoinitiator. Examples of photopolymerization initiators that can be used in combination include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin-n-butyl ether, benzoin isobutyl ether, acetophenone, dimethylaminobenzene Ethanone, 2,2-dimethoxy-1,2-diphenylethan-1-one, 2,2-diethoxy-2-phenylacetophenone, 2-hydroxy-2-methyl Base-1-phenylpropane-1-one, 1-hydroxycyclohexyl phenyl ketone, 4-(2-hydroxyethoxy)phenyl-2-(hydroxy-2-propyl) ketone, 1-[4 -(2-Hydroxyethoxy)-phenyl]-2-hydroxy-methylacetone, benzophenone, p-phenylbenzophenone, 4,4'-diethylaminobenzophenone , Dichlorodiphenyl ketone, 2-methylanthraquinone, 2-ethylanthraquinone, 2-tertiary-butylanthraquinone, 2-aminoanthraquinone, 2-methylthioxanthone, 2-ethylanthraquinone Benzyl thioxanthone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, benzyl dimethyl ketal, acetophenone dimethyl ketal , p-dimethylaminobenzoate, oligo[2-hydroxy-2-methyl-1[4-(1-methylvinyl)phenyl]acetone], 2,4,6-trimethyl Benzoyl-diphenyl-phosphine oxide, etc.
本實施形態中之光聚合起始劑較佳為在200nm以上且400nm以下的波長的範圍具有吸收峰者。藉此,成為樹脂層11會有效率地吸收雷射光並藉此容易良好地進行全燒蝕者。由此種觀點而言,上述範圍的下限値特佳為300nm以上,再佳為330nm以上。並且,上述範圍的上限値特佳為380nm以下,再佳為370nm以下。It is preferable that the photoinitiator in this embodiment has an absorption peak in the wavelength range of 200 nm or more and 400 nm or less. Thereby, the
此外,上述吸收峰可基於以下的方法而進行特定。首先,將光聚合起始劑溶解於作為溶劑之甲醇或乙腈,製備濃度0.01質量%的測量溶液。接下來,針對該測量溶液,藉由分光光度計(例如,島津製作所公司製,「UV-3600」)而測量吸光度,獲得吸收光譜。然後,從所得之吸收光譜可特定吸收峰(nm)的波長的範圍。In addition, the said absorption peak can be identified based on the following method. First, a photopolymerization initiator is dissolved in methanol or acetonitrile as a solvent to prepare a measurement solution having a concentration of 0.01% by mass. Next, the absorbance of this measurement solution is measured with a spectrophotometer (eg, "UV-3600" manufactured by Shimadzu Corporation) to obtain an absorption spectrum. Then, from the obtained absorption spectrum, the wavelength range of the absorption peak (nm) can be specified.
並且,本實施形態中之光聚合起始劑,其在濃度0.01質量%的溶液中之波長355nm的吸光度較佳為0.5以上,特佳為0.75以上,再佳為1.0以上。藉由上述吸光度為0.5以上,而成為樹脂層11會有效率地吸收雷射光並藉此容易良好地進行全燒蝕者。此外,上述吸光度的上限値未被特別限定,例如可為4.0以下。In addition, the photopolymerization initiator in this embodiment preferably has an absorbance at a wavelength of 355 nm in a solution having a concentration of 0.01% by mass of 0.5 or more, particularly preferably 0.75 or more, and still more preferably 1.0 or more. When the above-mentioned absorbance is 0.5 or more, the
此外,上述吸光度係製備光聚合起始劑的濃度0.01質量%的甲醇溶液(光聚合起始劑不溶於甲醇之情形,為乙腈溶液)並使用紫外線-可見光-近紅外線(UV-Vis-NIR)分光光度計(島津製作所公司製,產品名「UV-3600」,光路長10mm)測量該溶液中之波長200~500nm的範圍的吸光度者。In addition, the above-mentioned absorbance is obtained by preparing a methanol solution with a photopolymerization initiator concentration of 0.01% by mass (if the photopolymerization initiator is insoluble in methanol, it is an acetonitrile solution) and using ultraviolet-visible light-near infrared rays (UV-Vis-NIR) A spectrophotometer (manufactured by Shimadzu Corporation, product name "UV-3600", optical path length: 10 mm) measures absorbance in the solution in a wavelength range of 200 to 500 nm.
(1-3)雷射光吸收成分的摻合量
本實施形態之工件處理片1,如同前述,較佳為滿足與雷射光吸收成分的摻合量相關之條件1及條件2的至少一者。
(1-3) Blending amount of laser light absorbing components
The
亦即,在滿足條件1之情形中,樹脂層11中的雷射光吸收成分的含量為10質量%以上,特佳為13質量%以上,再佳為16質量%以上。藉由雷射光吸收成分的含量為此種範圍,而成為樹脂層11會有效率地吸收雷射光並藉此容易良好地進行全燒蝕者。並且,雷射光吸收成分的含量較佳為60質量%以下,特佳為50質量%以下,再佳為40質量%以下。藉此,變得容易確保雷射光吸收成分以外的成分(例如,後述之黏著劑)的摻合量,而成為容易獲得具有所期望的性能之工件處理片1者。That is, when
並且,關於條件1,在將雷射光吸收成分摻合至後述之黏著性組合物之情形中,該黏著性組合物中的雷射光吸收成分的含量,相對於後述之丙烯酸系聚合物(A)100質量份,較佳為12質量份以上,特佳為16質量份以上,再佳為20質量份以上。藉由雷射光吸收成分的含量為此種範圍,而成為樹脂層11會有效率地吸收雷射光並藉此容易良好地進行全燒蝕者。並且,黏著性組合物中的雷射光吸收成分的含量,相對於後述之丙烯酸系聚合物(A)100質量份,較佳為72質量份以下,特佳為60質量份以下,再佳為48質量份以下。藉此,變得容易確保雷射光吸收成分以外的成分(例如,後述之黏著劑)的摻合量,而成為容易獲得具有所期望的性能之工件處理片1者。Also, regarding
並且,在滿足條件2之情形中,在將樹脂層11中的雷射光吸收成分的含量設為X質量%且將樹脂層11的厚度設為Yμm之情形中,將X除以Y之値(X/Y)為2.0以上,特佳為2.2以上,再佳為2.3以上。藉由上述値(X/Y)為此等範圍,而成為樹脂層11會有效率地吸收雷射光並藉此容易良好地進行全燒蝕者。並且,上述値(X/Y)較佳為60以下,更佳為40以下,特佳為10以下,再佳為5以下。藉此,變得容易確保雷射光吸收成分以外的成分(例如,後述之黏著劑)的摻合量,而成為容易獲得具有所期望的性能之工件處理片1者。And, in the case of
(2)黏著劑
如同前述,本實施形態中之樹脂層11,除了雷射光吸收成分以外,還可包含黏著劑。此情形,樹脂層11較佳為由含有雷射光吸收成分之黏著性組合物所形成者。
(2) Adhesive
As mentioned above, the
作為上述黏著劑,只要可發揮對於工件小片等被黏著物之充分的保持力(黏著力),則未被特別限定。作為上述黏著劑的例子,可列舉丙烯酸系黏著劑、橡膠系黏著劑、聚矽氧系黏著劑、胺基甲酸酯系黏著劑、聚酯系黏著劑、聚乙烯醚系黏著劑等。此等之中,由容易發揮所期望的黏著力之觀點而言,較佳為使用丙烯酸系黏著劑。The above-mentioned adhesive is not particularly limited as long as it can exhibit sufficient holding power (adhesive force) to adherends such as workpiece chips. Examples of the adhesive include acrylic adhesives, rubber adhesives, silicone adhesives, urethane adhesives, polyester adhesives, and polyvinyl ether adhesives. Among them, it is preferable to use an acrylic adhesive from the viewpoint of easily exhibiting a desired adhesive force.
作為上述丙烯酸系黏著劑,可列舉將丙烯酸系聚合物(A)作為基底聚合物之丙烯酸系黏著劑。丙烯酸系聚合物(A)的重量平均分子量(Mw)較佳為1萬以上,特佳為10萬以上。並且,該重量平均分子量(Mw)較佳為200萬以下,特佳為150萬以下。藉由丙烯酸系聚合物(A)的重量平均分子量為1萬以上,而變得容易提高所得之黏著力的凝聚力,變得容易抑制黏著劑殘留於已分離之工件小片。並且,藉由重量平均分子量為200萬以下,而變得容易獲得穩定之樹脂層11的塗膜。此外,本說明書中之重量平均分子量(Mw)係藉由凝膠滲透層析法(GPC法)而測量之標準聚苯乙烯換算的値。As said acrylic adhesive agent, the acrylic adhesive agent which used an acrylic polymer (A) as a base polymer is mentioned. The weight average molecular weight (Mw) of the acrylic polymer (A) is preferably at least 10,000, particularly preferably at least 100,000. In addition, the weight average molecular weight (Mw) is preferably at most 2 million, particularly preferably at most 1.5 million. When the weight average molecular weight of the acrylic polymer (A) is 10,000 or more, it becomes easy to increase the cohesive force of the obtained adhesive force, and it becomes easy to suppress the adhesive remaining on the separated workpiece pieces. Moreover, it becomes easy to obtain the stable coating film of the
並且,丙烯酸系聚合物(A)的玻璃轉移溫度(Tg)較佳為-70℃以上,特佳為-60℃以上。並且,該玻璃轉移溫度(Tg)較佳為20℃以下,特佳為10℃以下。藉由丙烯酸系聚合物(A)的玻璃轉移溫度(Tg)為上述範圍,而變得容易達成所期望的凝聚力且同時實現所期望的黏著力。In addition, the glass transition temperature (Tg) of the acrylic polymer (A) is preferably -70°C or higher, particularly preferably -60°C or higher. In addition, the glass transition temperature (Tg) is preferably 20°C or lower, particularly preferably 10°C or lower. When the glass transition temperature (Tg) of an acryl-type polymer (A) is the said range, it becomes easy to achieve desired cohesive force, and simultaneously realizes desired adhesive force.
上述丙烯酸系聚合物(A),作為構成單體,較佳為至少含有(甲基)丙烯酸酯單體,並且,較佳為具有能與後述之交聯劑(B)的官能基進行反應之官能基(以下,亦稱為「反應性官能基」)。The above-mentioned acrylic polymer (A) preferably contains at least a (meth)acrylate monomer as a constituent monomer, and preferably has a functional group capable of reacting with a crosslinking agent (B) described later. Functional group (hereinafter also referred to as "reactive functional group").
作為上述(甲基)丙烯酸酯單體,具體而言,可列舉(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸n-辛酯、(甲基)丙烯酸n-壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸月桂酯等烷基的碳數為1~18的(甲基)丙烯酸烷酯;環烷基的碳數為1~18左右的(甲基)丙烯酸環烷酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸異莰酯、(甲基)丙烯酸二環戊酯、(甲基)丙烯酸二環戊烯酯、(甲基)丙烯酸二環戊烯基氧基乙酯、(甲基)丙烯酸醯亞胺酯等具有環狀骨架之(甲基)丙烯酸酯;(甲基)丙烯酸羥甲酯、(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯等含有羥基的(甲基)丙烯酸酯;(甲基)丙烯酸環氧丙酯、(甲基)丙烯酸β-甲基環氧丙酯、(甲基)丙烯酸(3,4-環氧環己基)甲酯、3-環氧環-2-羥丙基(甲基)丙烯酸酯等含有環氧基的(甲基)丙烯酸酯。As the (meth)acrylate monomer, specifically, methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, ( Amyl methacrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, (meth)acrylate Base) Alkyl (meth)acrylates with an alkyl group of 1 to 18 carbon atoms such as isononyl acrylate, decyl (meth)acrylate, and lauryl (meth)acrylate; cycloalkyl groups with a carbon number of 1 to 18 Cycloalkyl (meth)acrylate, benzyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, (meth)acrylic acid esters such as dicyclopentenyloxyethyl (meth)acrylic acid imide ester and other (meth)acrylic acid esters with a ring skeleton; (meth)hydroxymethyl acrylate, (meth) Hydroxyl-containing (meth)acrylates such as 2-hydroxyethyl acrylate and 2-hydroxypropyl (meth)acrylate; glycidyl (meth)acrylate, β-methylglycidyl (meth)acrylate Epoxy group-containing (meth)acrylates such as (3,4-epoxycyclohexyl)methyl (meth)acrylate, 3-epoxycyclo-2-hydroxypropyl (meth)acrylate, etc.
並且,可將丙烯酸、甲基丙烯酸、伊康酸、乙酸乙烯酯、丙烯腈、苯乙烯、N-羥甲基丙烯醯胺等(甲基)丙烯酸酯單體以外的單體進行共聚合。此等可單獨使用一種,亦可併用二種以上。Further, monomers other than (meth)acrylate monomers such as acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methylolacrylamide may be copolymerized. These may be used individually by 1 type, and may use 2 or more types together.
丙烯酸系聚合物(A)係藉由含有反應性官能基並與後述之交聯劑(B)的官能基進行反應而形成三維網格結構,而變得容易提高樹脂層11的凝聚性。作為丙烯酸系聚合物(A)的反應性官能基,可列舉羧基、胺基、環氧基、羥基等,但如後述般,因容易選擇性地與被較佳使用作為交聯劑之有機多價異氰酸酯化合物進行反應,故較佳為包含羥基。The acrylic polymer (A) contains a reactive functional group and reacts with a functional group of a crosslinking agent (B) described later to form a three-dimensional network structure, thereby improving the cohesiveness of the
使用上述之含有羥基的(甲基)丙烯酸酯、具有丙烯酸等反應性官能基之單體而構成丙烯酸系聚合物(A),藉此反應性官能基可導入丙烯酸系聚合物(A)。The acrylic polymer (A) is formed by using the above-mentioned hydroxyl group-containing (meth)acrylate and a monomer having a reactive functional group such as acrylic acid, whereby the reactive functional group can be introduced into the acrylic polymer (A).
具有反應性官能基之單體(以下,亦稱為含有反應基的單體)在丙烯酸系聚合物(A)的全部構成單體中的比例較佳為0.3質量%以上,特佳為0.5質量%以上。並且,上述比例較佳為40質量%以下,特佳為20質量%以下。藉由以此範圍包含含有反應基的單體,而變得容易達成所期望的凝聚力且同時實現所期望的黏著力。The proportion of monomers having reactive functional groups (hereinafter also referred to as monomers containing reactive groups) to all monomers constituting the acrylic polymer (A) is preferably at least 0.3% by mass, particularly preferably 0.5% by mass %above. In addition, the above ratio is preferably at most 40% by mass, particularly preferably at most 20% by mass. By including the reactive group-containing monomer in this range, it becomes easy to achieve desired cohesive force and simultaneously realize desired adhesive force.
並且,丙烯酸系聚合物(A),作為構成單體,較佳為含有上述之(甲基)丙烯酸烷酯,更佳為含有烷基的碳數為1~10的(甲基)丙烯酸烷酯,特佳為含有烷基的碳數為4~8的(甲基)丙烯酸烷酯。丙烯酸系聚合物(A)含有上述之(甲基)丙烯酸烷酯之情形,(甲基)丙烯酸烷酯在丙烯酸系聚合物(A)的全部構成單體中的比例較佳為30質量%以上,特佳為35質量%以上。並且,上述比例較佳為99質量%以下,特佳為95質量%以下。藉由以此範圍含有(甲基)丙烯酸烷酯,而變得容易達成所期望的凝聚力且同時實現所期望的黏著力。In addition, the acrylic polymer (A) preferably contains the above-mentioned alkyl (meth)acrylate as a constituent monomer, more preferably an alkyl (meth)acrylate containing an alkyl group and having 1 to 10 carbon atoms. , particularly preferably an alkyl (meth)acrylate having an alkyl group and having 4 to 8 carbon atoms. When the acrylic polymer (A) contains the above-mentioned alkyl (meth)acrylate, the ratio of the alkyl (meth)acrylate to all monomers constituting the acrylic polymer (A) is preferably 30% by mass or more , especially preferably 35% by mass or more. In addition, the above ratio is preferably at most 99% by mass, particularly preferably at most 95% by mass. By containing the alkyl (meth)acrylate in this range, it becomes easy to achieve desired cohesive force and simultaneously realize desired adhesive force.
由容易將樹脂層11的儲存模數調整成所期望的範圍之觀點而言,較佳為使用交聯劑(B)。作為交聯劑(B),可使用多官能性化合物,所述多官能性化合物具有與丙烯酸系聚合物(A)等所具有之反應性官能基的反應性。作為此種多官能性化合物的例子,可列舉異氰酸酯化合物、環氧化合物、胺化合物、三聚氰胺化合物、吖𠰂化合物、肼化合物、醛化合物、㗁唑啉化合物、金屬烷氧化物化合物、金屬螯合化合物、金屬鹽、銨鹽、反應性酚樹脂等。From the viewpoint of easily adjusting the storage modulus of the
相對於丙烯酸系聚合物(A)100質量份,交聯劑(B)的摻合量較佳為0.001質量份以上,特佳為0.1質量份以上,再佳為0.2質量份以上。並且,相對於丙烯酸系聚合物(A)100質量份,交聯劑(B)的摻合量較佳為20質量份以下,特佳為10質量份以下,再佳為5質量份以下。The blending amount of the crosslinking agent (B) is preferably at least 0.001 parts by mass, particularly preferably at least 0.1 parts by mass, and still more preferably at least 0.2 parts by mass, based on 100 parts by mass of the acrylic polymer (A). Furthermore, the blending amount of the crosslinking agent (B) is preferably at most 20 parts by mass, particularly preferably at most 10 parts by mass, and still more preferably at most 5 parts by mass, based on 100 parts by mass of the acrylic polymer (A).
此外,構成樹脂層11之黏著劑可為具有活性能量線硬化性之黏著劑。作為此種活性能量線硬化性黏著劑,可使用習知者,例如可使用國際公開第2018/084021號所公開者。In addition, the adhesive constituting the
在用於形成樹脂層11之黏著性組合物中,除了上述之成分,還可添加其他添加劑。作為該添加劑的例子,可列舉黏著賦予劑、染料、顏料等著色材料、阻燃劑、填料、抗靜電劑等。此外,由容易良好地發生工件小片的分離之觀點而言,該黏著性組合物較佳為不含有氣體產生劑。若使用氣體產生劑,則有時會在樹脂層11全部區域產生氣體。該情形,僅在預期的位置發生全燒蝕,變得難以僅使位於該處之工件小片分離,而有變得難以良好地進行工件小片的分離之情形。In the adhesive composition for forming the
(3)樹脂層的厚度
本實施形態中之樹脂層11的厚度較佳為1μm以上,特佳為2μm以上,再佳為3μm以上。藉由樹脂層11的厚度為1μm以上,而成為容易發生良好的全燒蝕者。並且,樹脂層11的厚度較佳為60μm以下,特佳為40μm以下,再佳為20μm以下。藉由樹脂層11的厚度為60μm以下,而成為容易滿足上述之條件2者。
(3) The thickness of the resin layer
The thickness of the
2.基材
本實施形態中之基材12,針對其組成、物性等未被特別限定。由工件處理片1容易發揮所期望的功能之觀點而言,基材12較佳為由樹脂所構成。基材12由樹脂所構成之情形,作為該樹脂的例子,可列舉聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯(polybutylene terephthalate)、聚萘二甲酸乙二酯(polyethylene naphthalate)等聚酯系樹脂;聚乙烯、聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、乙烯-降莰烯共聚物、降莰烯樹脂等聚烯烴系樹脂;乙烯-乙酸乙烯酯共聚物;乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸甲酯共聚物、其他乙烯-(甲基)丙烯酸酯共聚物等乙烯系共聚合樹脂;聚氯乙烯、氯乙烯共聚物等聚氯乙烯系樹脂;(甲基)丙烯酸酯共聚物;聚胺基甲酸酯;聚醯亞胺;聚苯乙烯;聚碳酸酯;氟樹脂等。並且,構成基材12之樹脂可為已與上述之樹脂交聯者、上述之樹脂的離子聚合物等經改質者等。並且,基材12可為由上述之樹脂所構成之單層的薄膜,或者,可為積層多個該薄膜而成之積層薄膜。在此積層薄膜中,構成各層之材料可為同種類,亦可為不同種類。
2. Substrate
The
在本實施形態中之基材12的表面,以使對於樹脂層11之附著性提升為目的,可施予由氧化法、凹凸化法等所進行之表面處理、或底漆處理。作為上述氧化法,可列舉例如電暈放電處理、電漿放電處理、鉻氧化處理(濕式)、火焰處理、熱風處理、臭氧、紫外線照射處理等,並且,作為凹凸化法,可列舉例如噴砂法、熱噴霧處理法等。The surface of the
本實施形態中之基材12可含有著色劑、阻燃劑、塑化劑、抗靜電劑、潤滑劑、填料等各種添加劑。並且,樹脂層11包含藉由活性能量線而硬化之材料之情形,基材12較佳為具有對於活性能量線之穿透性。The
本實施形態中之基材12的製造方法,只要為由樹脂製造基材12者則未被特別限定。例如,可藉由T型模(T-DIE)法、圓型模法等熔融擠壓法;壓延機法;乾式法、濕式法等溶液法等,而將樹脂成形為片狀,藉此而進行製造。The manufacturing method of the
本實施形態中之基材12的厚度較佳為10μm以上,特佳為30μm以上,再佳為50μm以上。並且,基材12厚度較佳為500μm以下,更佳為300μm以下,特佳為200μm以下,再佳為150μm以下,最佳為100μm以下。藉由基材12的厚度為上述範圍,而成為工件處理片1以指定的平衡度具備剛性與柔軟性者,並成為容易進行工件小片的良好處理者。The thickness of the
3.剝離片
本實施形態中,樹脂層11包含黏著劑作為構成其之成分的一者之情形,在將工件小片貼附至樹脂層11中之基材12的相反側的面為止前的期間,以保護該面為目的,可在該面積層有剝離片。
3. Peeling sheet
In the present embodiment, when the
上述剝離片的構成為任意,可例示藉由剝離劑等而將塑膠薄膜進行剝離處理者。作為該塑膠薄膜的具體例,可列舉聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯等聚酯薄膜、及聚丙烯、聚乙烯等聚烯烴薄膜。作為上述剝離劑,可使用聚矽氧系、氟系、長鏈烷基系等,此等之中,較佳為便宜且能獲得穩定性能之聚矽氧系。The structure of the said peeling sheet is arbitrary, and what peels the plastic film with a peeling agent etc. is mentioned as an example. Specific examples of the plastic film include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyolefin films such as polypropylene and polyethylene. . As the above-mentioned release agent, polysiloxane-based, fluorine-based, long-chain alkyl-based, etc. can be used, and among them, polysiloxane-based, which is inexpensive and can obtain stable performance, is preferable.
針對上述剝離片的厚度並無特別限制,例如可為20μm以上且250μm以下。The thickness of the release sheet is not particularly limited, and may be, for example, not less than 20 μm and not more than 250 μm.
4.其他構成
在本實施形態之工件處理片1中,可在樹脂層11中之基材12的相反側的面積層有接著劑層。在該片中,藉由將工件貼附於接著劑層中之樹脂層11的相反側的面,並將該工件與接著劑層一起進行切割,而可獲得積層有經單體化之接著劑層之工件小片。該晶片藉由此經單體化之接著劑層而能容易地對搭載該工件小片之對象進行固定。作為構成上述之接著劑層之材料,較佳為使用含有熱塑性樹脂與低分子量的熱硬化性接著成分者、含有B-階段(半硬化狀)的熱硬化型接著成分者等。
4. Other components
In the
並且,在本實施形態之工件處理片1中,可在樹脂層11中之基材12的相反側的面積層有保護膜形成層。在此種片中,藉由將工件貼附於保護膜形成層中之樹脂層11的相反側的面,並將該工件與保護膜形成層一起進行切割,而可獲得積層有經單體化之保護膜形成層之工件小片。作為該工件,較佳為使用在單面形成有電路者,此情形,通常在形成有該電路之面的相反側的面積層保護膜形成層。經單體化之保護膜形成層,藉由在指定的時間點使其硬化,而可將具有充分的耐久性之保護膜形成於工件小片。保護膜形成層較佳為由未硬化的硬化性接著劑所構成。Furthermore, in the
5.工件處理片的製造方法
本實施形態之工件處理片1的製造方法未被特別限定。例如,可在基材12上直接形成樹脂層11,或者,可在加工片(process sheet)上形成樹脂層11後,將該樹脂層11轉移至基材12上。
5. Manufacturing method of workpiece handling sheet
The manufacturing method of the
樹脂層11包含黏著劑作為構成其之成分的一者之情形,該樹脂層11的形成可藉由習知的方法而進行。例如,製備用於形成樹脂層11之黏著性組合物、及依據期望進一步含有溶劑或分散媒之塗布液。然後,在基材的單面或剝離片的具有剝離性之面(以下,有稱為「剝離面」之情形)塗布上述塗布液。接下來,藉由使所得之塗膜進行乾燥,而可形成樹脂層11。When the
上述之塗布液的塗布可藉由習知的方法而進行,例如,可藉由棒塗布法、刮塗(knife coating)法、輥塗布法、刮刀塗布(blade coating)法、模具塗布法、凹版塗布法等而進行。此外,塗布液只要能進行塗布則其特性未被特別限定,用於形成樹脂層11之成分有被含有作為溶質之情形,亦有被含有作為分散質之情形。並且,已在剝離片上形成樹脂層11之情形,該剝離片可作為步驟材料而剝離,亦可在貼附至被黏著物為止前的期間保護樹脂層11。The coating of the above-mentioned coating liquid can be carried out by a known method, for example, by bar coating method, knife coating (knife coating) method, roll coating method, knife coating (blade coating) method, die coating method, gravure coating method etc. In addition, the characteristics of the coating liquid are not particularly limited as long as it can be applied, and the components for forming the
在用於形成樹脂層11之黏著性組合物含有前述之交聯劑之情形中,較佳為藉由改變上述的乾燥的條件(溫度、時間等)或藉由另外設置加熱處理,而使塗膜內的聚合物成分與交聯劑之交聯反應進行,在樹脂層11內以所期望的存在密度形成交聯結構。再者,為了使上述之交聯反應充分地進行,亦可在完成工件處理片1後,進行例如在23℃、相對濕度50%的環境靜置數日之熟化。In the case where the adhesive composition for forming the
6.工件處理片的使用方法
本實施形態之工件處理片1可較佳地使用於工件小片的處理用。如同前述,在本實施形態之工件處理片1中,因樹脂層11為藉由雷射光的照射而會有效率地進行全燒蝕者,故可以高精確度將保持於樹脂層11上之工件小片朝向指定的位置進行分離。
6. How to use the workpiece processing sheet
The
作為本實施形態之工件處理片1的使用方法的一例,可列舉以下使用方法:藉由在樹脂層11中局部地發生之全燒蝕,而從樹脂層11選擇性地分離保持於樹脂層11中之與基材12相反的面上之多個工件小片中之任意的工件小片。As an example of the usage method of the
在上述使用方法中,保持於樹脂層11上之多個工件小片可為藉由將保持於樹脂層11中之與基材12相反的面上之工件(成為工件小片的材料者)在該面上進行單體化而得者。亦即,工件小片可為藉由在樹脂層11上切割工件而得者。或者,工件小片可為將獨立於本實施形態之工件處理片1所形成者載置於樹脂層11上者。In the above method of use, the plurality of workpiece pieces held on the
此外,在本實施形態之工件處理片1具備前述之接著劑層、保護膜形成層等之情形中,較佳為在樹脂層11上切割此等層與工件。藉此,可獲得工件小片,所述工件小片積層有將此等層進行單體化而成者。In addition, in the case where the
針對本實施形態之工件小片的形狀、尺寸等雖未被特別限定,但關於尺寸,工件小片較佳為俯視時之面積為10μm
2以上,特佳為100μm
2以上。並且,工件小片較佳為俯視時之面積為1mm
2以下,特佳為0.25mm
2以下。並且,作為工件小片的尺寸,在工件小片為矩形之情形,較佳為工件小片的最小的一邊為2μm以上,特佳為5μm以上,再佳為10μm以上。並且,上述最小的一邊較佳為1mm以下,特佳為0.5mm以下。作為矩形的工件小片的尺寸的具體例,可列舉2μm×5μm、10μm×10μm、0.5mm×0.5mm、1mm×1mm等。本實施形態之工件處理片1,即使為此種細微的工件小片,尤其即使為難以由針的向上頂起而從片分離之細微的工件小片,亦能良好地進行處理。另一方面,本實施形態之工件處理片1,針對面積大於1mm
2者(例如1mm
2~2000mm
2)、厚度為1~10000μm者(例如10~1000μm)等較大尺寸的工件小片,亦可良好地進行處理。
The shape and size of the workpiece chip in this embodiment are not particularly limited, but the size of the workpiece chip is preferably 10 μm 2 or more in plan view, particularly preferably 100 μm 2 or more. In addition, the area of the small workpiece is preferably 1 mm 2 or less, particularly preferably 0.25 mm 2 or less in plan view. Furthermore, as the size of the workpiece piece, when the workpiece piece is rectangular, the smallest side of the workpiece piece is preferably 2 μm or more, particularly preferably 5 μm or more, and still more preferably 10 μm or more. In addition, the above-mentioned smallest side is preferably 1 mm or less, particularly preferably 0.5 mm or less. Specific examples of the size of the rectangular workpiece piece include 2 μm×5 μm, 10 μm×10 μm, 0.5 mm×0.5 mm, 1 mm×1 mm, and the like. The
作為工件小片,可列舉半導體元件、半導體裝置等,更具體而言,可列舉微發光二極體、功率元件、MEMS(Micro Electro Mechanical Systems,微機電系統)等。此等之中,工件小片較佳為發光二極體,特佳為選自次毫米發光二極體及微發光二極體之發光二極體。近年來,正探討高密度地配置次毫米發光二極體、微發光二極體等之裝置的開發,而能以高精確度處理此等發光二極體之本實施形態之工件處理片1非常適於製造該種裝置。Examples of workpiece small pieces include semiconductor elements, semiconductor devices, and more specifically, micro light emitting diodes, power elements, MEMS (Micro Electro Mechanical Systems, micro-electromechanical systems), and the like. Among them, the workpiece chip is preferably a light-emitting diode, particularly preferably a light-emitting diode selected from submillimeter light-emitting diodes and micro light-emitting diodes. In recent years, the development of devices that arrange sub-millimeter light-emitting diodes and micro-light-emitting diodes at a high density is being studied, and the
以下,作為工件處理片1的具體的使用例,基於圖2而說明裝置製造方法。該裝置製造方法至少具備以下3個步驟:準備步驟(圖2(a))、配置步驟(圖2(b))及分離步驟(圖2(c)及(d))。Hereinafter, a device manufacturing method will be described based on FIG. 2 as a specific usage example of the
在準備步驟中,如圖2(a)所示,準備在本實施形態之工件處理片1中之樹脂層11側的面上保持有多個工件小片2而成之積層體。該積層體可藉由將另外製作之工件小片2載置於工件處理片1上而準備,或者,亦可藉由將保持於樹脂層11側的面上之工件在該面上進行單體化(亦即進行切割)而準備。該切割可利用習知的方法進行。In the preparatory step, as shown in FIG. 2( a ), a laminate in which a plurality of workpiece
工件小片2的形狀、尺寸等係如同前述並無特別限定,較佳的尺寸亦如同前述。關於工件小片2的具體例,亦如同前述,可列舉半導體元件、半導體裝置等,尤其,可列舉次毫米發光二極體及微發光二極體等發光二極體。The shape and size of the
在接下來的配置步驟中,如圖2(b)所示,對於能容納工件小片2之對象物3,以面對上述積層體中之工件小片2側的面之方式配置上述積層體。對象物3的例子雖係因應進行製造之裝置而適當決定,但在工件小片2為發光二極體之情形中,作為對象物3的具體例,可列舉基板、片、捲軸等,特別適合使用設有配線之配線基板。In the next arranging step, as shown in FIG. 2( b ), the laminated body is arranged so as to face the surface of the laminated body on the workpiece
之後,在分離步驟中,首先,如圖2(c)所示,對上述積層體中之樹脂層11中之貼附有至少一個工件小片2之位置照射雷射光。該照射可對貼附有工件小片2之多個位置同時地進行,或對該等位置依序進行。作為雷射光的照射條件,只要能發生全燒蝕,則未被限定。作為用於照射的裝置,可使用習知者。After that, in the separation step, first, as shown in FIG. 2( c ), laser light is irradiated to the position where at least one workpiece
藉由上述照射,如圖2(d)所示,可在樹脂層11中之經照射之位置發生全燒蝕。具體而言,藉由雷射光的照射,構成樹脂層11之成分會蒸發或揮發,而在經照射之位置中之樹脂層11會消失。藉此,將工件小片2保持於工件處理片1側者會消失,而朝向對象物3落下。其結果,可將存在於已發生該全燒蝕之位置之工件小片2’載置於對象物3上。By the above irradiation, as shown in FIG. 2( d ), total ablation can occur at the irradiated position in the
此外,本實施形態中之樹脂層11係由前述之活性能量線硬化性黏著劑所構成之黏著劑層之情形,上述之裝置製造方法亦可進一步具備下述的硬化步驟。亦即,可具備對在樹脂層11側的面上保持有多個工件小片2而成之積層體中之樹脂層11的整體、或、對上述積層體中之樹脂層11中之貼附有至少一個工件小片2之位置照射活性能量線,藉此使樹脂層11整體性或局部性地硬化之硬化步驟。此硬化步驟可在上述之分離步驟之前進行、或、與上述之分離步驟同時進行。In addition, when the
硬化步驟中之活性能量線的照射,可使用習知的手法進行,例如,作為光源,可使用高壓水銀燈、具備紫外線LED之紫外線照射裝置、亦被使用於分離步驟之雷射光照射裝置等。在同時進行硬化步驟與分離步驟之情形中,較佳為進行使用雷射光照射裝置之雷射光4的照射,並使其兼作活性能量線的照射。Irradiation of active energy rays in the hardening step can be performed using known methods. For example, as a light source, a high-pressure mercury lamp, an ultraviolet irradiation device equipped with an ultraviolet LED, or a laser light irradiation device used in the separation step can be used. In the case where the hardening step and the separation step are performed simultaneously, it is preferable to perform irradiation with laser light 4 using a laser light irradiation device, and make it also serve as irradiation of active energy rays.
上述之裝置製造方法亦可具備準備步驟、配置步驟、硬化步驟及分離步驟以外的步驟。例如,在準備步驟與分離步驟之間的任意時間點,可進行研磨、模具接合、線接合、成形(molding)、檢查、轉移步驟等。The above-mentioned device manufacturing method may include steps other than the preparation step, arrangement step, hardening step, and separation step. For example, grinding, die bonding, wire bonding, molding, inspection, transfer steps, etc. may be performed at any point in time between the preparation step and the separation step.
若根據以上所說明之裝置製造方法,則可藉由適當選擇所使用之工件小片2、對象物3等而製造各種裝置。例如,在使用選自次毫米發光二極體及微發光二極體之發光二極體作為工件小片2之情形中,可製造具備多個此種發光二極體之發光裝置,更具體而言,可製造顯示器。尤其,可製造具備微發光二極體作為像素之顯示器、具備多個次毫米發光二極體作為背光之顯示器等。According to the device manufacturing method described above, various devices can be manufactured by appropriately selecting the
並且,本實施形態之工件處理片1亦可使用於以下方法:選擇性地去除設於該片上之多個工件小片2之中指定的工件小片2。Furthermore, the
例如,已在本實施形態之工件處理片1上製造多個發光二極體等後,在該片上進行發光二極體的檢查。於是,可僅針對已被確認為不良品之發光二極體,使其發生全燒蝕並從工件處理片1脫離而去除。For example, after a plurality of light emitting diodes and the like have been produced on the
再者,亦可將該等良品的集合從工件處理片1轉移至出貨用片。此時,在樹脂層11係由前述之活性能量線硬化性黏著劑所構成之情形中,藉由對該樹脂層11照射活性能量線,而使發光二極體對於工件處理片1之黏著力降低,而可將良品的集合良好地轉移至出貨用片。之後,在已去除不良品之位置,再配置另外製作之良品,藉此亦可獲得僅設有良品之工件處理片1。Furthermore, it is also possible to transfer the collection of these good products from the
在如上述般之藉由全燒蝕而去除不良品之方法中,因不需進行片的擴片及不良品的拾取,故不易發生發光二極體的間隔的變更、位置的偏移等。因此,成為容易良好地轉移至出貨用片者。In the method of removing defective products by total ablation as described above, since there is no need to expand the chip and pick up defective products, it is difficult to change the spacing of the light emitting diodes, shift the position, and the like. Therefore, it becomes easy to transfer to a shipment-use sheet in good condition.
以上所說明之實施形態係為了容易理解本發明而記載者,並非為了限定本發明而記載者。因此,上述實施形態所揭示之各要素,其主旨亦包含本發明的技術範圍所屬之全部的設計變更、均等物等。The embodiments described above are described in order to facilitate understanding of the present invention, and are not described in order to limit the present invention. Therefore, the gist of each element disclosed in the above embodiments also includes all design changes, equivalents, and the like within the technical scope of the present invention.
例如,在本實施形態之工件處理片1中之樹脂層11與基材12之間、或基材12中之樹脂層11的相反側的面,亦可積層有其他層。作為該其他層的具體例,可列舉黏著劑層。此情形,在已將該黏著劑層側的面貼附於支撐台(玻璃板等透明基板)之狀態下,可進行上述之分離步驟等。For example, another layer may be laminated between the
作為構成上述黏著劑層之黏著劑,雖未被特別限定,但較佳為難以吸收活性能量線且難以遮斷活性能量線者。此情形,在照射會穿透該黏著劑層之雷射光之情形中,該雷射光變得容易到達樹脂層11,變得容易發生良好的全燒蝕。具體而言,作為構成上述黏著劑層之黏著劑,較佳為使用不具有活性能量線硬化性之黏著劑,特佳為使用不含有活性能量線硬化性成分之黏著劑。藉由使用不具有活性能量線硬化性之黏著劑,即使在已照射上述雷射光之情形,上述黏著劑層亦不會硬化,藉此能防止工件處理片1非預期地從透明基板剝離。作為上述黏著劑層的厚度,雖未被特別限定,但例如較佳為5~50μm。
[實施例]
The adhesive constituting the adhesive layer is not particularly limited, but is preferably one that hardly absorbs active energy rays and blocks active energy rays. In this case, in the case of irradiating laser light that penetrates the adhesive layer, the laser light becomes easy to reach the
以下,藉由實施例等而更具體地說明本發明,但本發明的範圍未受限於此等實施例等。Hereinafter, although an Example etc. demonstrate this invention more concretely, the scope of the present invention is not limited to these Examples etc.
〔實施例1〕 (1)黏著性組合物的製備 藉由溶液聚合法,使丙烯酸2-乙基己酯70質量份與丙烯酸2-羥乙酯30質量份進行聚合,獲得丙烯酸系聚合物。藉由後述的方法測量此丙烯酸系聚合物的重量平均分子量(Mw),結果為80萬。 [Example 1] (1) Preparation of adhesive composition By the solution polymerization method, 70 parts by mass of 2-ethylhexyl acrylate and 30 parts by mass of 2-hydroxyethyl acrylate were polymerized to obtain an acrylic polymer. When the weight average molecular weight (Mw) of this acrylic polymer was measured by the method mentioned later, it was 800,000.
在溶劑中混合由上述所得之丙烯酸系聚合物100質量份(固體成分換算,以下相同)、作為交聯劑之三羥甲丙烷改質甲伸苯基二異氰酸酯(Tosoh公司製,商品名「CORONATE L」)1.5質量份、以及作為雷射光吸收成分之參[2,4,6-[2-{4-(辛基-2-乙酸甲酯)氧基-2-羥基苯基}]-1,3,5-三𠯤(羥基苯基三𠯤系紫外線吸收劑,BASF公司製,產品名「Tinuvin477」)5質量份,獲得黏著性組合物的塗布液。100 parts by mass of the above-obtained acrylic polymer (in terms of solid content, the same applies hereinafter) and trimethylolpropane-modified methylene diisocyanate (manufactured by Tosoh Corporation, trade name "CORONATE") as a crosslinking agent were mixed in a solvent. L") 1.5 parts by mass, and ginseng [2,4,6-[2-{4-(octyl-2-methyl acetate)oxy-2-hydroxyphenyl}]-1 as a laser light absorbing component , 3,5-Trisin (a hydroxyphenyltrisin series ultraviolet absorber, manufactured by BASF, product name "Tinuvin 477") 5 parts by mass to obtain a coating liquid of an adhesive composition.
(2)工件處理片的製作 對於作為基材之已將單面進行易接著處理之聚對苯二甲酸乙二酯薄膜(東洋紡製,產品名「COSMOSHINE A4100」,厚度:50μm)中之易接著處理面,塗布由上述步驟(1)所得之黏著性組合物的塗布液,並藉由加熱而使所得之塗膜乾燥。藉此,在基材上形成厚度2μm的樹脂層(黏著劑層)。 (2) Production of workpiece processing sheet For the easy-adhesive surface of a polyethylene terephthalate film (manufactured by Toyobo, product name "COSMOSHINE A4100", thickness: 50μm) that has been subjected to easy-adhesive treatment on one side as the base material, the coating is performed by the above steps ( 1) The obtained coating liquid of the adhesive composition is dried by heating the obtained coating film. Thereby, a resin layer (adhesive layer) with a thickness of 2 μm was formed on the substrate.
接下來,將樹脂層中之與基材相反的面側及在厚度38μm的聚對苯二甲酸乙二酯薄膜的單面形成有聚矽氧系的剝離劑層而成之剝離片(LINTEC公司製,產品名「SP-PET381031」)的剝離面進行貼合。藉此,獲得依序積層剝離片、樹脂層及基材而成之工件處理片。Next, a release sheet (LINTEC Co. Made, product name "SP-PET381031") to the peeling side for lamination. Thereby, the workpiece|work processing sheet which laminated|stacked the peeling sheet, the resin layer, and a base material sequentially was obtained.
此外,若計算所形成之樹脂層中的雷射光吸收成分的含量,則為4.69質量%。並且,若針對本實施例計算在將樹脂層中的雷射光吸收成分的含量設為X質量%且將樹脂層的厚度設為Yμm之情形中之將X除以Y之値(X/Y),則為2.35。In addition, when the content of the laser light absorbing component in the formed resin layer was calculated, it was 4.69% by mass. In addition, when calculating the value of dividing X by Y (X/Y) in the case where the content of the laser light absorbing component in the resin layer is X mass % and the thickness of the resin layer is Y μm for this example, , it is 2.35.
(3)重量平均分子量的測量方法 前述之重量平均分子量(Mw)係使用凝膠滲透層析法(GPC)並利用以下的條件進行測量(GPC測量)之標準聚苯乙烯換算的重量平均分子量。 <測量條件> ・測量裝置:Tosoh公司製,HLC-8320 ・GPC管柱(依以下順序通過):Tosoh公司製 TSK gel superH-H TSK gel superHM-H TSK gel superH2000 ・測量溶劑:四氫呋喃 ・測量溫度:40℃ (3) Measurement method of weight average molecular weight The aforementioned weight average molecular weight (Mw) is a standard polystyrene-equivalent weight average molecular weight measured by gel permeation chromatography (GPC) under the following conditions (GPC measurement). <Measurement conditions> ・Measuring device: Tosoh Co., Ltd., HLC-8320 ・GPC column (pass through in the following order): Tosoh Co., Ltd. TSK gel superH-H TSK gel superHM-H TSK gel superH2000 ・Measurement solvent: Tetrahydrofuran ・Measurement temperature: 40°C
〔實施例2~3及比較例1~2〕 除了將交聯劑的含量、雷射光吸收成分的含量、及樹脂層的厚度如表1所示般進行變更之外,與實施例1同樣地進行而製造工件處理片。此外,比較例1為未使用雷射光吸收成分之例。 [Examples 2-3 and Comparative Examples 1-2] A workpiece processing sheet was produced in the same manner as in Example 1 except that the content of the crosslinking agent, the content of the laser light absorbing component, and the thickness of the resin layer were changed as shown in Table 1. In addition, Comparative Example 1 is an example in which no laser light absorbing component is used.
此外,在表1中,針對實施例2~3及比較例1~2,亦顯示樹脂層中的雷射光吸收成分的含量(質量%)、及在將樹脂層中的雷射光吸收成分的含量設為X質量%且將樹脂層的厚度設為Yμm之情形中之將X除以Y之値(X/Y)。In addition, in Table 1, for Examples 2-3 and Comparative Examples 1-2, the content (mass %) of the laser light-absorbing component in the resin layer and the content of the laser light-absorbing component in the resin layer are also shown. It is a value (X/Y) obtained by dividing X by Y when X mass % is assumed and the thickness of the resin layer is Y μm.
〔試驗例〕(雷射剝離適性的評價) (1)工件處理片上之晶片的準備(準備步驟) 在矽晶圓(#2000,厚度:350μm)的單面貼附切割片(LINTEC公司製,產品名「D-485H」)的黏著面。接下來,使切割用環狀框架附著於該切割片中之上述黏著面的周緣部(不與矽晶圓重疊的位置)。再者,配合環狀的外徑裁斷切割片。之後,使用切割裝置(DISCO公司製,產品名「DFD6362」),將矽晶圓切割成具有300μm×300μm的尺寸之晶片。之後,對切割片照射紫外線(照度230mW/cm 2,光量190mJ/cm 2)。藉此,獲得在切割片上設有多個晶片而成之積層體。 [Test example] (Evaluation of laser peeling suitability) (1) Preparation of wafer on workpiece handling sheet (preparation step) Attach a dicing sheet (manufactured by Lintec Co., Ltd., product name "D-485H") on the adhesive side. Next, a ring frame for dicing was attached to the peripheral portion (position not overlapping the silicon wafer) of the above-mentioned adhesive surface in the dicing sheet. Furthermore, the cutting pieces are cut according to the outer diameter of the ring. Thereafter, the silicon wafer was diced into wafers having a size of 300 μm×300 μm using a dicing device (manufactured by DISCO, product name “DFD6362”). Thereafter, the diced sheet was irradiated with ultraviolet rays (illuminance: 230 mW/cm 2 , light intensity: 190 mJ/cm 2 ). Thereby, a laminated body in which a plurality of wafers are provided on a dicing sheet is obtained.
接下來,從由實施例及比較例所製造之工件處理片將剝離片剝離,將藉此而露出之露出面與如同上述所得之積層體中之存在多個晶片之面進行貼合。之後,從多個晶片將切割片剝離。藉此,將多個晶片從切割片轉移到工件處理片,獲得在工件處理片上設有多個晶片而成之積層體。Next, the peeling sheet was peeled off from the workpiece handling sheet manufactured by the Example and the comparative example, and the exposed surface exposed by this was bonded to the surface where many wafers existed in the laminated body obtained above. Thereafter, the diced sheets are peeled off from the plurality of wafers. Thereby, a plurality of wafers are transferred from the dicing sheet to the workpiece processing sheet, and a laminate in which a plurality of wafers are provided on the workpiece processing sheet is obtained.
(2)由雷射光照射所導致之晶片的分離(分離步驟) 針對由上述步驟(1)所得之在工件處理片上設有多個晶片而成之積層體,使用雷射光照射裝置,以穿越過工件處理片之方式對各個晶片照射雷射光。 (2) Separation of wafers by laser light irradiation (separation step) For the laminate obtained in the above step (1) with a plurality of wafers on the workpiece handling sheet, a laser light irradiation device is used to irradiate each wafer with laser light passing through the workpiece handling sheet.
具體而言,使用雷射光照射裝置(KEYENCE公司製,產品名「MD-U1000C」),以穿越過工件處理片之方式對晶片照射波長355nm的雷射光。該照射係以將雷射光光點從晶片的外周部朝向中央且漩渦狀地進行掃瞄並照射晶片的整面之方式進行。此時,雷射光光點的直徑為20μm,且頻率:40kHz、掃瞄速度:500mm/s、照射量:50μJ/shot。並且,從多個晶片中選擇100個晶片(縱10個×橫10個晶片的群集),對其等進行照射。Specifically, using a laser light irradiation device (manufactured by KEYENCE, product name "MD-U1000C"), the wafer was irradiated with laser light having a wavelength of 355 nm so as to pass through the workpiece processing wafer. This irradiation is carried out so that the laser spot is scanned from the outer periphery of the wafer toward the center in a swirl shape, and the entire surface of the wafer is irradiated. At this time, the diameter of the laser light spot is 20 μm, the frequency: 40 kHz, the scanning speed: 500 mm/s, and the irradiation amount: 50 μJ/shot. Then, 100 wafers (a cluster of 10 vertically × 10 horizontally wafers) are selected from among the plurality of wafers, and irradiated.
(3)樹脂層的消失及晶片分離的確認 針對已進行以上的照射的位置,使用雷射顯微鏡,確認樹脂層有無消失。然後,基於以下的基準,針對樹脂層的消失進行評價。將結果揭示於表1。 ○…在全部位置充分地消失。 ×…有消失不充分的地方。 (3) Confirmation of the disappearance of the resin layer and the separation of the wafer With regard to the positions subjected to the above irradiation, the presence or absence of disappearance of the resin layer was confirmed using a laser microscope. Then, on the basis of the following criteria, evaluation was performed on the disappearance of the resin layer. The results are shown in Table 1. ○...disappeared sufficiently in all positions. ×... There are places where the disappearance is insufficient.
再者,基於以下的基準,確認晶片有無從工件處理片脫離,評價雷射剝離適性。將結果揭示於表1。 ○…100個晶片全部發生脫離。 ×…發生脫離的晶片的數量小於100個。 In addition, based on the following criteria, the presence or absence of detachment of the wafer from the workpiece processing sheet was confirmed, and the laser peeling suitability was evaluated. The results are shown in Table 1. ○... All 100 wafers were detached. ×...The number of wafers where detachment occurred was less than 100 pieces.
[表1]
如由表1可知,由實施例所製造之工件處理片,其雷射剝離適性優異。 [產業利用性] As can be seen from Table 1, the workpiece processing sheets manufactured in the examples have excellent laser stripping properties. [Industrial Utilization]
本發明的工件處理片可適合地使用於製造具備微發光二極體作為像素之顯示器等。The workpiece processing sheet of the present invention can be suitably used in the manufacture of displays and the like having micro light emitting diodes as pixels.
1:工件處理片
11:樹脂層
12:基材
2,2’:工件小片
3:對象物
4:雷射光
1: Workpiece handling sheet
11: resin layer
12:
圖1為本發明的一實施形態之工件處理片的剖面圖。 圖2為說明使用本發明的一實施形態之工件處理片之裝置製造方法之剖面圖。 Fig. 1 is a cross-sectional view of a workpiece processing sheet according to an embodiment of the present invention. Fig. 2 is a cross-sectional view illustrating a method of manufacturing a device using a workpiece processing sheet according to an embodiment of the present invention.
1:工件處理片 1: Workpiece handling sheet
11:樹脂層 11: resin layer
12:基材 12: Substrate
Claims (19)
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JP (1) | JPWO2022201767A1 (en) |
TW (1) | TW202239021A (en) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2002198569A (en) * | 2000-12-26 | 2002-07-12 | Sony Corp | Transfer method of element, semiconductor device and image display device |
JP2002314053A (en) * | 2001-04-19 | 2002-10-25 | Sony Corp | Chip part transfer method, element arraying method using the same, and manufacturing method of image display device |
JP3608615B2 (en) * | 2001-04-19 | 2005-01-12 | ソニー株式会社 | Device transfer method, device array method using the same, and image display device manufacturing method |
JP4934942B2 (en) * | 2003-07-23 | 2012-05-23 | ソニー株式会社 | Peeling method |
JP2010177390A (en) * | 2009-01-29 | 2010-08-12 | Sony Corp | Method of transferring device and method of manufacturing display apparatus |
JP6980999B2 (en) * | 2016-12-01 | 2021-12-15 | Jsr株式会社 | Object processing method and semiconductor device manufacturing method |
WO2019207920A1 (en) * | 2018-04-26 | 2019-10-31 | Jsr株式会社 | Mounting method and mounting device for semiconductor elements |
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- 2022-01-13 JP JP2023508665A patent/JPWO2022201767A1/ja active Pending
- 2022-01-13 WO PCT/JP2022/000965 patent/WO2022201767A1/en active Application Filing
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