TW202234046A - Detection device and method thereof - Google Patents

Abstract

A detection device including a light-emitting component, a light-detecting component, at least one reflective optical thin film element and a control unit is provided. The light-emitting component is used for providing an excitation light beam, wherein a part of the excitation beam whose dominant wavelength falls within a excitation wavelength band forms a fluorescence beam after passing through the object to be detected. The light-detecting component is used for receiving a part of the fluorescence beam whose dominant wavelength falls within a detection wavelength band. The control unit is coupled to the at least one reflective optical thin film element. The control unit controls the at least one reflective optical thin film element to filter out a part of a wavelength range of the incident light beam, and the incident beam is at least one of the excitation beam and the fluorescence beam. A method thereof is also provided.

Description

Detection device and detection method

The present invention is a division case of Application No. 109115198. The present invention relates to a detection device and detection method, and in particular, to a detection device and detection method for photoluminescence applications.

Existing detection technologies applied in real-time polymerase chain reaction / quantitative polymerase chain reaction (real-time PCR/qPCR) mainly include a temperature control part, a detection part and an analysis part. In the temperature control part, the temperature control device is used to generate the required thermal cycle, so that the amount of the object to be tested is multiplied after each thermal cycle, and the amount of the object to be tested can be changed after N thermal cycles. 2 times the N power. In the detection part, the excitation beam with the main emission wavelength falling within a specific wavelength range is used to generate a fluorescent light beam with the main emission wavelength falling within another specific wavelength range after irradiating the object to be tested, and then the light detection element is used to receive the fluorescent light beam. light beam, and the characteristics of this fluorescent beam are detected. In the analysis part, the analysis software is used to monitor the temperature change and fluorescence change of the entire polymerase chain reaction in real time, and quantitatively analyze the object to be tested.

Generally speaking, since there are many kinds of fluorescent reagents used to be added to the analyte in the market, and each fluorescent reagent has its relatively suitable excitation spectrum, it is necessary to select the excitation spectrum according to the type of fluorescent reagent. A suitable bandpass filter (optical bandpass filter) is set on the optical path before the light beam passes through the object to be tested, so as to effectively form the required fluorescent light beam when irradiating the fluorescent reagent in the object to be tested, Among them, a band-pass filter (band-pass filter) is a filter that allows light of a certain wavelength to pass through and does not allow light of other wavelengths to pass through. In addition, since the signal of the fluorescent light beam is generally quite weak and easily concealed by the signal of other noise light, the optical path before the light detection element receives the fluorescent light beam in another specific wavelength range is usually also set. There is a filter module with one or several band-pass filters to filter out the signal of the noise light outside the other specific wavelength range and purify the characteristics of the fluorescent light beam. In order to ensure the detection accuracy, the OD value of many band pass filters is required to reach the OD6 level, that is, the light transmission rate passing through the cut-off band of each band pass filter must be less than or equal to 10 to the negative 6th power.

On the other hand, when the existing detection devices on the market need to detect the analyte with a variety of different fluorescent reagents, a variety of fluorescent channels (ie, from the light source, the excitation beam is generated, to the analyte to form a fluorescent beam) , up to the overall light path before and after the photodetection element) to meet the needs of a variety of different fluorescent reagents, and it is necessary to set up multiple different filter modules with different bandpass filters on each fluorescent channel to meet the formation of Excitation beams with suitable excitation spectra and requirements for purification of fluorescence beam properties.

In this way, according to the prior art, when a detection device is designed to simultaneously detect a variety of different fluorescent reagents to be tested, so that the number of fluorescent channels increases, the number of required bandpass filters must also increase, This will greatly increase the cost of the product. In addition, when the detection device is provided with various fluorescent channels, with the complicated optical path system, the device space is difficult to be reduced and relatively large, and the high assembly complexity also increases the cost of assembly and maintenance. In addition, once the fluorescent reagent in the test object is replaced or a new fluorescent reagent needs to be added, the light source of the excitation beam on the fluorescent channel and all the bandpass filters must be replaced or added accordingly, so it is not easy to carry out The equipment is updated, and the function expansion cannot be carried out.

The invention provides a detection device, a detection method and a fluorescent real-time quantitative polymerase chain reaction system, which have good detection accuracy and low cost.

A detection device of the present invention includes a light-emitting element, a light detection element, at least one reflective optical thin film element and a control unit. At least one reflective optical thin film element is disposed on the fluorescent channel between the light-emitting element and the light-detecting element. The control unit is coupled to the at least one reflective optical thin film element for controlling the wavelength range of the reflected light of the at least one reflective optical thin film element.

In an embodiment of the present invention, each of the above-mentioned at least one reflective optical thin film element includes one or more reflective filter units.

In an embodiment of the present invention, the above-mentioned one or more reflective filter units are a MEMS reflective filter unit.

In an embodiment of the present invention, each of the above-mentioned one or more reflective filter units has a resonant cavity, and the resonant cavity has a depth distance, and the depth distance is used to determine the amount of light reflected by the reflective filter unit. The band range of the main emission wavelength of light.

In an embodiment of the present invention, the above-mentioned at least one reflective optical thin film element includes a first reflective optical thin film element, and one or more reflective optical filter units whose depth distance of the resonant cavity is the first depth distance It is arranged on the first reflective optical thin film element, and is used to generate and reflect the outgoing light beam whose main emission wavelength falls within the excitation wavelength range and corresponds to the first depth distance.

In an embodiment of the present invention, the above-mentioned at least one reflective optical thin-film element includes a second reflective optical thin-film element, and one or more reflective filter units whose depth distance of the resonant cavity is the second depth distance are provided The second reflective optical thin film element is used to generate and reflect the outgoing light beam whose main emission wavelength falls within the detection wavelength range and corresponds to the second depth distance.

In an embodiment of the present invention, the above-mentioned at least one optical thin film element includes one or more filter regions, and each of the one or more filter regions includes one or more reflective filter units and is located in the same filter region The actuation depth distances of the resonant cavities of the one or more reflective filter units are the same as each other, and the actuation depth distances of the resonator cavities of the one or more reflective filter units located in different filter regions are different from each other.

In an embodiment of the present invention, the above-mentioned one or more filter regions include a first filter region, and the reflective filter unit located in the first filter region is used to reflect that the main emission wavelength falls within an excitation wavelength band range of light.

In an embodiment of the present invention, the above-mentioned one or more filter regions include a second filter region, and the reflected light of the reflective filter unit located in the second filter region is controlled by the control unit to fall within the A detection band range.

In an embodiment of the present invention, the above-mentioned detection device further includes an accommodating frame for accommodating an object to be tested, and the accommodating frame has an opening for receiving the main emission wavelength falling within the excitation wavelength range. Part of the excitation beam.

A detection method of the present invention is suitable for a detection device. The detection device includes a light-emitting element, a light detection element, a control unit, and at least one reflective optical thin film element, wherein the reflective optical thin film element is disposed between the light-emitting element and the light-emitting element. On the fluorescent channel between the detection elements, and the detection method includes the following steps. A light-emitting element is used to provide an excitation beam, wherein the excitation beam is used to generate a fluorescent beam after irradiating an object to be tested. The fluorescent light beam is received by the photodetecting element. At least one reflective optical thin film element is used to filter out part of the wavelength range of the incident light beam, and the incident light beam is one of the excitation light beam and the fluorescent light beam. The reflective optical thin film element is controlled by the control unit to reflect the light in the set wavelength range.

In an embodiment of the present invention, the above-mentioned at least one reflective optical thin film element includes one or more reflective optical filter units, and the at least one reflective optical thin film element is used to filter part of the wavelength range of the incident light beam, The control unit is used to control one or more reflective filter units to filter out part of the wavelength range of the incident light beam.

In an embodiment of the present invention, the above-mentioned one or more reflective filter units are MEMS reflective filter units, and the control unit controls the one or more reflective filter units to filter In addition to the partial wavelength range of the incident light beam, the control unit is used to control the MEMS reflective filter unit to filter out the partial wavelength range of the incident light beam.

In an embodiment of the present invention, the above-mentioned reflective filter unit has a resonant cavity, and the control unit controls the depth distance of the resonant cavity to reflect the light corresponding to the main emission wavelength and the depth distance.

In an embodiment of the present invention, in the above-mentioned detection method, when an excitation beam provided by the light-emitting element enters at least one reflective optical thin film element, the control unit controls one or more reflective filter units illuminated by the excitation beam. The depth distance of the at least one resonant cavity is the first depth distance, so that the main emission wavelength of the excitation beam reflected by the at least one reflective optical thin film element falls within the excitation wavelength range and corresponds to the first depth distance.

In an embodiment of the present invention, when a fluorescent beam is incident on at least one reflective optical thin film element, the control unit controls the depth of at least one resonant cavity of one or more reflective filter units illuminated by the fluorescent beam The distance is the second depth distance, so that the main emission wavelength of the fluorescent light beam reflected by the at least one reflective optical thin film element falls within the detection wavelength range and corresponds to the second depth distance.

In an embodiment of the present invention, the above-mentioned detection method further includes providing one or more filter regions on at least one optical thin film element, and each one or more filter regions includes one or more reflective filter units , and the operating depth distances of the resonant cavities of one or more reflective filter units located in the same filter area are the same as each other, and the operating depth distances of the resonant cavities of one or more reflective filter units located in different filter areas are mutually different.

In an embodiment of the present invention, the above-mentioned one or more filter regions include a first filter region, and further includes the following step: using the control unit to control the reflective filter unit located in the first filter region to make The reflected light falls within an excitation wavelength range.

In an embodiment of the present invention, the above-mentioned filter regions include a second filter region, and further includes the following step: using the control unit to control the reflective filter unit located in the second filter region to cause reflection The light falls within a detection band range.

In an embodiment of the present invention, the above-mentioned detection device further includes an accommodating frame for accommodating the object to be tested, and the accommodating frame has an opening, and further includes the following steps: using the opening to form an optical path to form a fluorescent light channel.

A fluorescent real-time quantitative polymerase chain reaction system of the present invention includes: The above detection device, a temperature control module and an analysis module, the temperature control module is used to control a temperature of the system and has a heating module. The analysis module is used for analyzing a signal from the light detection element.

In an embodiment of the present invention, the above-mentioned at least one reflective optical thin film element includes a first reflective optical thin film element for reflecting the outgoing light beam whose main emission wavelength falls within the excitation wavelength range and a second reflective optical thin film element The thin film element is used to reflect the outgoing light beam whose main emission wavelength falls within the detection band range.

In an embodiment of the present invention, each of the above-mentioned at least one reflective optical thin film element includes one or more reflective filter units, wherein each of the one or more reflective filter units has a resonant cavity and resonates The cavity has a depth distance, and the depth distance is used to determine the wavelength band range of the main emission wavelength of the light reflected by the reflective filter unit.

In an embodiment of the present invention, the above-mentioned detection device further includes an accommodating frame for accommodating an object to be tested, and the accommodating frame has an opening for receiving the main emission wavelength falling within the excitation wavelength range. Part of the excitation beam.

In an embodiment of the present invention, the above-mentioned temperature control module further has a temperature sensor and a heat dissipation module.

Based on the above, the detection device and the detection method of the present invention perform fluorescence detection through the configuration of at least one reflective optical thin film element. According to an embodiment of the present invention, only at least one reflective optical thin film element is required, and no filter module composed of band-pass filters is required to perform fluorescence detection, and it is easy to update and expand the equipment. According to another embodiment of the present invention, the same optical path or fluorescent channel can be used to support the detection of various types of fluorescent reagents to be tested, thus simplifying the optical path and reducing the complexity of the device.

FIG. 1 is a system block diagram of a detection apparatus according to an embodiment of the present invention. FIG. 2 is a schematic structural diagram of a detection apparatus of FIG. 1 . FIG. 3A is a schematic front view of an embodiment of the reflective optical thin film element of FIG. 2 . FIG. 3B is a schematic diagram of an optical path when an incident light beam is vertically incident on an embodiment of a reflective filter unit of the reflective optical thin film element of FIG. 3A . FIG. 3C is a schematic diagram of an optical path when an incident light beam is obliquely incident on the reflective filter unit FU of FIG. 3B . 3D to 3F are schematic diagrams illustrating the working principle of the reflective optical thin film element. FIG. 3G is a schematic flowchart of a detection method when the reflective optical thin film element of FIG. 3A is used. FIG. 4A is a schematic diagram of the optical path of the detection device of FIG. 2 when the incident light beam is an excitation light beam. 4B is a schematic diagram of the optical path of the detection device of FIG. 2 when the incident light beam is a fluorescent light beam. FIG. 4C is a partial enlarged schematic view of the sleeve structure of FIG. 4A . FIG. 4D is a partial enlarged schematic view of another sleeve structure of FIG. 4A . Please refer to the embodiments of the present invention in FIG. 1 and FIG. 2 , the detection device 100 of this embodiment includes a light-emitting element 110 , a accommodating frame 120 , a light-detecting element 130 , a control unit 150 and at least one reflective optical thin-film element 140 , wherein The at least one optical thin film element 140 includes a first reflective optical thin film element 141 and a second reflective optical thin film element 142 . In addition, in this embodiment, the fluorescence channel of the detection device 100 is the optical path of the excitation beam Eli from the light-emitting element 110 to the first reflective optical thin film element 141, and the first reflective optical thin film element 141 to the accommodating frame 120 ( The optical path of the excitation beam ELo of the object to be tested (O), the optical path of the fluorescent light beam FLi of the accommodating frame 120 (the object to be tested O) to the second reflective optical thin film element 142, the optical path of the second reflective optical thin film element 142 to The entire optical path of the fluorescent light beam FLo of the photodetecting element 130 is constituted.

According to an embodiment of the present invention, the light-emitting element 110 is used to provide the excitation light beam ELi. For example, the light emitting element 110 can be a white light emitting diode, and can be used to provide an excitation light beam ELi with an emission wavelength between about 400 nm and about 700 nm. For another example, the light-emitting element 110 can be an ultraviolet light-emitting diode, and the light-emitting wavelength range provided by the light-emitting element 110 includes at least a part of the ultraviolet light wavelength range. For another example, the light-emitting element 110 can be a light source including visible light and ultraviolet light, and the light-emitting wavelength range provided by the light-emitting element 110 includes at least the wavelength range of visible light and ultraviolet light.

The accommodating frame 120 in this embodiment is used for accommodating the object O to be tested. According to an embodiment of the present invention as shown in FIG. 2 , the accommodating frame 120 has at least one sleeve structure 121 , wherein the at least one sleeve structure 121 is used for accommodating the object O to be tested. For example, as shown in FIG. 2, the analyte O with a fluorescent reagent is placed in one of the sleeve structures 121, and when the excitation spectrum suitable for the fluorescent reagent falls within the excitation wavelength range, when the main When the part of the excitation light beam ELo whose emission wavelength falls within the excitation wavelength range irradiates the test object O, the fluorescent reagent in the test object O can generate a fluorescent light beam FLi.

According to an embodiment of the present invention, as shown in FIG. 2 and FIG. 3A to FIG. 3C , at least one reflective optical thin film element 140 can filter out part of the wavelength range of the incident light beam IL by using the interference effect of the light when the light is incident. In order to form and reflect the outgoing light beam OL whose main emission wavelength falls within a specific wavelength range. According to an embodiment of the present invention, at least one reflective optical thin film element 140 includes a first reflective optical thin film element 141 and/or a second reflective optical thin film element 142, and the first reflective optical thin film element 141 and/or the second reflective optical thin film element 141 The two reflective optical thin film element 142 can be a reflective optical thin film element of a microelectromechanical system (MEMS), which can reflect the incident light beam IL with a specific wavelength under the control of the control unit 150 . According to an embodiment of the present invention, the reflective optical thin film element 140 is a MEMS reflective optical thin film element 140 , which can reflect light with a specific wavelength in the incident light beam IL under the control of the control unit 150 to become Outgoing beam OL. According to an embodiment of the present invention, the MEMS reflective optical thin film element 140 has one or more filter units FU, which can reflect light with a specific wavelength in the incident light beam IL under the control of the control unit 150. It becomes the outgoing light beam OL. According to an embodiment of the present invention, each filter unit FU has an optical resonant cavity, and the optical resonant cavity has a depth distance dx of the resonant cavity, and the control unit 150 can control the depth distance dx to transmit the incident beam. The light having a specific wavelength in the IL is reflected to become the outgoing light beam OL. According to another embodiment of the present invention, the filter unit FU of the MEMS reflective optical thin film element 140 may be an interferometric modulator display (IMOD), which was developed by Qualcomm The Mirasol display unit (Mirasol Display) is a thin absorbing layer arranged on a mirror layer and the distance between the optical resonant cavity can be controlled, so as to reflect the light with a specific wavelength in the incident light beam IL. It becomes the outgoing light beam OL (FIG. 3B and FIG. 3C). According to another embodiment of the present invention, the filter unit FU of the MEMS reflective optical thin film element 140 may be a plurality of different filter units FU1, FU2, FU3, each of which can be controlled by the control unit 150 to reflect The incident light beams IL of different specific wavelengths become outgoing light beams OL ( FIG. 5B ).

According to an embodiment of the present invention, as shown in FIGS. 3A to 3C , the first reflective optical thin film element 141 and the second reflective optical thin film element 142 respectively include a plurality of filter units FU, and each filter unit FU has The first interface S1 and the second interface S2, the resonant cavity of each filter unit FU is formed between the first interface S1 and the second interface S2 of each filter unit FU, and the distance between the first interface S1 and the second interface S2 Defined as the depth distance dx of the resonant cavity of each filter unit FU. According to an embodiment of the present invention, as shown in FIGS. 3A to 3C , the first reflective optical thin film element 141 and the second reflective optical thin film element 142 respectively include a plurality of filter units FU, and the structure of the filter units FU can be It is realized by MEMS technology, wherein an anti-reflection layer 310 is arranged on the uppermost part, an absorption layer 320 is arranged under the anti-reflection layer 310, and a mirror layer 340 is arranged at a distance from the absorption layer 320, The space between the absorption layer 320 and the mirror layer 340 forms a resonance cavity 330. The resonance cavity 330 can be filled with air or other gases or other materials, and the distance dx between the absorption layer 320 and the mirror layer 340 is defined by For this purpose, the depth distance of the resonant cavity can be modulated by controlling the depth distance dx by the control element 150 to reflect the light having a specific wavelength in the incident light beam IL to become the outgoing light beam OL.

Here is a brief introduction to the working principle of the reflective optical thin film element as follows. Referring to FIG. 3D, according to the principle of thin film optical interference, when light enters a dense medium from a sparse medium and is reflected, the phase of the light changes by 180 degrees, but not when the light enters a sparse medium from a dense medium and is reflected. Therefore, when the incident light beam IL enters the film (resonant cavity) vertically from the interface S1, the outgoing light beam OL1 that leaves the film after being vertically reflected by the first interface S1 and the outgoing light beam OL1 that enters the film are vertically reflected by the second interface S2 and then exit the interface. If the optical path difference (OPD) between the outgoing beams OL2 transmitted by S1 and leave the film is equal to an integer multiple of its wavelength λ and then a half of the wavelength λ, that is, the optical path difference OPD = (λm-λ/ 2), m is a positive integer 1, 2, 3, . And the intensity of the total incident beam OL will increase significantly, where the optical path difference is the product of twice the film thickness dx and the film refractive index nx: optical path difference OPD = 2(dx)*(nx) = 2( nx)(dx). However, when the wavelength of the incident light beam IL does not meet the above conditions, it cannot be largely reflected by the thin film. In other words, the thickness of the optical film will determine the wavelength of the outgoing light beam OL that can be largely reflected. For example, when m=1, the optical path difference OPD=λ/2, the constructive interference between the thickness of the optical film and the outgoing beam OL can be determined by the following relation: λ=4(nx)(dx).

Referring to FIG. 3E, when the incident light beam IL is not perpendicular to the film but has an incident angle θ0, the optical path difference between the outgoing light beam OL1 and the outgoing light beam OL2 reflected by the first interface S1 and the second interface S2 respectively needs to be Consider the relationship between the refractive index n0 of the external medium, the refractive index nx of the medium in the resonant cavity, the incident angle θ0 of the incident beam IL entering the resonant cavity and the refraction angle θx and other parameters, and consider the refractive index n0 when the outside is vacuum or air When it is approximately equal to 1, it will conform to the following formula: Optical path difference OPD=2(nx)(dx)cos(θx), where sin(θx) = (n0)sin(θ0)/(nx) = sin( θ0)/(nx) (according to Snell's Law) to calculate cos(θx), and considering constructive interference, the optical path difference OPD = (λm-λ/2), m is a positive integer 1, 2 , 3..., the constructive interference of light with wavelength λ can be achieved by controlling dx. For example, when m=1 is selected, the optical path difference OPD =λ/2, the relationship between the film thickness dx and the wavelength λ of the outgoing beam OL can be determined by the following formula: λ=4(nx)(dx)cos(θx ), where sin(θx) = sin(θ0)/(nx), and nx can be known from the dielectric material, so when the incident angle θ0 is determined, the refraction angle θx can be obtained, and then cos(θx) can be calculated. Furthermore, in order to obtain the outgoing light beam OL having the required value of the wavelength λ, the thickness dx can be controlled based on the value of the required wavelength λ of the outgoing light beam OL through the above formula.

Please refer to FIG. 3F, and further consider the situation when there are more layers of thin films, wherein the refractive indices of the outer layer L0, the first dielectric layer L1, the second dielectric layer L2, and the third dielectric layer L3 from top to bottom are, for example, n0, n1, n2, n3, and n0<n1, n2<n1, n2<n3, wherein the external layer L0 is, for example, the outside world (such as air or vacuum), the first dielectric layer L1 is, for example, an optical film, and the second dielectric The layer L2 is, for example, an optical film or a cavity (such as air or vacuum), and the third dielectric layer L3 is, for example, an optical film or a mirror surface (such as a total reflection mirror surface). Thin medium, optically dense medium, optically thin medium, optically dense medium. When the external incident light beam IL is not perpendicular to the film but has an angle, assuming the incident angle is the incident angle θ0, the refraction angle when point A passes through the first interface S1 (between the external layer L0 and the first dielectric layer L1) is the first angle θ1, and the refraction angle when point B passes through the second interface S2 (between the first dielectric layer L1 and the second dielectric layer L2) is the second angle θ2, and the light beam meets the third angle at point C. The interface S3 (between the second dielectric layer L2 and the third dielectric layer L3) only considers the reflection and directly passes through the point D of the second interface S2 and the point E of the first interface S1. The first dielectric layer L1 has a thickness du and the second dielectric layer L2 has a thickness dv, then the optical path difference OPD of the outgoing beam OL3 relative to the outgoing beam OL1 can be obtained as OPD = 2(n1)(du)cos(θ1) + 2(n2)( dv)cos(θ2), where (n0)sin(θ0) = (n1)sin(θ1) = (n2)sin(θ2) (according to Snell's law), and additionally consider n0<n1 and n2<n3 , so the first interface S1 and the third interface S3 both have a phase conversion of 180 degrees when they reflect light, so during constructive interference, the optical path difference OPD = λm, m is a positive integer 1, 2, 3..., you can borrow The constructive interference of the light with wavelength λ is achieved by controlling the depth distance. The effect formula of the outgoing beam OL2 has been obtained in Fig. 3E, and the outgoing beam OL is a summation considering the outgoing beam OL1, the outgoing beam OL2, and the outgoing beam OL2. The sum of the interference effects of beam OL3 and other reflected rays. When the number of layers of the optical film is further increased, the corresponding optical path difference formula can be easily deduced from the foregoing, so it is not repeated here. When a multilayer thin film is stacked, its optical properties can be further set to enhance the constructive interference effect of light with wavelength λ, thereby achieving the purpose of wavelength selection. According to the aforementioned thin film optical interference principle, if the optical film is regarded as an optical resonant cavity, and the thickness of the optical thin film element is regarded as the depth distance of the resonant cavity, then the reflected light can be selected by adjusting the depth distance of the resonant cavity. The main wavelength range of the desired light.

As shown in FIGS. 2 and 3A to 3B, in this embodiment, the incident light beam IL can be the excitation light beam ELi and/or the fluorescent light beam FLi, and the corresponding outgoing light beam OL is the excitation light beam ELo and/or the fluorescent light beam FLi, respectively Fluorescent beam FLo. Further, as shown in FIG. 2 and FIG. 4A , when the incident light beam IL is the excitation light beam ELi, at least one reflective optical thin film element 140 includes a first reflective optical thin film element 141 , and the first reflective optical thin film element 141 is located at The excitation light beam ELi is on the transmission path, and is located between the light-emitting element 110 and the accommodating frame 120 . In other words, when the incident light beam IL is the excitation light beam ELi, it is the case where the excitation light beam ELi is incident on the first reflective optical thin film element 141 . When the excitation light beam ELi passes through the first optical thin film element 141 , the main emission wavelength can be formed to fall within the excitation wavelength range by controlling the depth distance dx of the resonant cavity of each filter unit FU of the first reflective optical thin film element 141 The excitation beam ELo. Furthermore, as shown in FIG. 2 , in this embodiment, the detection device 100 further includes a first housing HS1 to form a first darkroom for accommodating the light-emitting element 110 and the first reflective optical film element 141 to isolate the outside The noise light is favorable for the fluorescent detection. In addition, the first housing HS1 has an outlet EX for passing the excitation light beam ELo whose main emission wavelength falls within the excitation wavelength range. According to an embodiment of the present invention, the detection device 100 is provided with at least one darkroom to accommodate the object to be tested O, so as to isolate external noise light and facilitate fluorescence detection. According to another embodiment of the present invention, the object to be tested O is set in a darkroom and supported by the accommodating frame 120 to isolate external noise light, but the darkroom has an opening for the object to be tested O to receive the excitation beam. The ELo and an opening allow the object to be tested O to transmit the fluorescent light beam FLi.

In more detail, as shown in FIG. 2 and FIG. 4A , since the position of the light-emitting element 110 , the incident direction of the excitation beam ELi and the position of the test object O are all fixed, the method of the first reflective optical thin film element 141 The line direction N1 and the first incident angle α1 between the excitation beam ELi and the normal direction N1 will also remain constant and constant, so as long as the outlet EX of the first housing HS1 is set to be located in the transmission path of the excitation beam ELo The small hole on the top, the excitation beam ELo can pass through the exit EX and be incident on the object to be tested O. According to an embodiment of the present invention, the inner side of the first housing HS1 is made of a black material or a light-absorbing substance coated with a black material to reduce the reflection of the excitation light beam ELi through the internal structure of the first housing HS1 and the exit of the first housing HS1. The possibility of EX, which can further filter out the influence of noise light.

Next, as shown in FIG. 2 and FIG. 4C , according to an embodiment of the present invention, at least one sleeve structure 121 is located on the transmission path of the excitation beam ELo. In this embodiment, each of the at least one sleeve structure 121 has an opening OP, and the excitation light beam ELo whose main emission wavelength falls within the excitation wavelength range will be aimed at the opening OP after passing through the outlet EX of the first housing HS1, Instead, the opening OP is made available to receive the excitation light beam ELo. For example, the width dimension of the opening OP can be between about 0.5 mm and 1 mm, so as to reduce the possibility of ambient noise light passing through the opening OP and maintain the maximum value of the excitation beam ELo that the opening OP can receive That's it. In addition, in this embodiment, the shape of the opening OP may be a slit, but the present invention is not limited thereto. In other embodiments, the shape of the opening OP can also be a circular opening OP (such as the opening OP of the sleeve structure 121A in the embodiment of FIG. 4D ), a rectangular opening OP, and the like.

On the other hand, as shown in FIG. 2 and FIG. 4B , when the incident light beam IL is the fluorescent light beam FLi, at least one reflective optical thin film element 140 includes a second reflective optical thin film element 142 , and the second reflective optical thin film element 142 It is located on the transmission path of the fluorescent light beam FLi, and is located between the accommodating frame 120 and the light detection element 130 . In addition, each of the at least one sleeve structure 121 also has an opening under it, which can be used for the fluorescence beam FLi generated by the part of the excitation beam ELo whose main emission wavelength falls within the excitation wavelength range to be emitted after irradiating the test object O . In other words, when the incident light beam IL is the fluorescent light beam FLi, that is, the situation when the fluorescent light beam FLi is incident on the second reflective optical thin film element 142 . According to an embodiment of the present invention, as shown in FIG. 2 , the detection device 100 further includes a second housing HS2 to form a second darkroom for accommodating the second reflective optical film element 142 and the light detection element 130 to isolate the The external noise light is beneficial to the fluorescent detection. The second housing HS2 has an inlet IN for the fluorescent light beam FLi to pass through.

Also, similarly, as shown in FIG. 2 and FIG. 4B , since the position of the object to be tested O, the incident direction of the fluorescent light beam FLi, the positions of the second reflective optical thin film element 142 and the light detection element 130 are all fixed, therefore , the normal direction N2 of the second reflective optical thin film element 142 and the second incident angle α2 between the fluorescent light beam FLi and the normal direction N2 will also remain constant, so as long as the second housing HS2 The inlet IN is set as a small hole on the transmission path of the fluorescent light beam FLi, and the fluorescent light beam FLi can pass through the inlet IN and be transmitted to the second reflective optical thin film element 142, thereby blocking the ambient light, and further Filter out the influence of noise light. Further, when the fluorescent light beam FLi passes through the second reflective optical thin film element 142 , the main light emission can also be formed by controlling the depth distance dx of the resonant cavity of each filter unit FU of the second reflective optical thin film element 142 The wavelength of the fluorescent light beam FLo falls within the detection wavelength range, wherein the detection wavelength range is a wavelength range in which the characteristics of the fluorescent light beam FL are more pronounced. Although FIG. 2 , FIG. 4A and FIG. 4B include the first darkroom and the second darkroom, according to another embodiment of the present invention, the detection device 100 is provided with at least one darkroom between the light-emitting element 110 and the light-detecting element 130 On top of each other, they are mutually blocked and only the optical paths of the fluorescent channels communicate with each other, so as to reduce the noise light received by the photodetecting element 130 and facilitate fluorescent detection. According to another embodiment of the present invention, the fluorescent channel between the light-emitting element 110 and the light-detecting element 130 of the detection device 100 is disposed in at least one darkroom to isolate external noise light. According to another embodiment of the present invention, the fluorescent channel between the light-emitting element 110 and the light-detecting element 130 of the detection device 100 passes through at least two darkrooms to reduce external noise light.

Moreover, as shown in FIG. 2 , the light detection element 130 is located on the transmission path of the fluorescent light beam FLo, and can be used for receiving the fluorescent light beam FLo. For example, the light detection element 130 is a photoelectric sensor capable of detecting light intensity, and can be a photodiode (Photodiode). Specifically, the light detection element 130 is used for receiving part of the fluorescent light beam FLo whose main emission wavelength falls within the detection wavelength range.

On the other hand, as shown in FIG. 1 , in this embodiment, the detection device 100 further includes a control unit 150 . For example, the control unit 150 can be a microcontroller or a central processing unit, which includes a memory, an input controller, and an output controller. According to an embodiment of the present invention, the control unit 150 may execute a program to control the setting of the light-emitting wavelength range of the light-emitting element 110 and control the switching of the light-emitting element 110 . According to another embodiment of the present invention, the control unit 150 can control the light detection element 130 to adjust the detected light intensity. For example, when the light detection element 130 has different sensing intensities for different wavelengths of light When , the sensing intensity can be adjusted (offset) through the control unit 150 .

According to another embodiment of the present invention, the control unit 150 can control the excitation light beam ELi or the fluorescent light beam FLi to pass through the filter unit of the first optical thin film element 141 and/or the second optical thin film element 142 of the at least one optical thin film element 140 The depth distance dx of the resonant cavity of the FU. More specifically, the control unit 150 can adjust the depth distance dx of the resonant cavity of the filter unit FU of the at least one optical thin film element 140 to further adjust the range of the main emission wavelength of the excitation beam ELo and/or the fluorescent beam FLo. , so that the main emission wavelength of the excitation light beam ELo can fall within the excitation wavelength range and/or the main emission wavelength of the fluorescent light beam FLo can fall within the detection wavelength range.

How the control unit 150 performs the detection method of FIG. 3G will be further explained below. Referring to FIG. 3G , in this embodiment, the detection method of FIG. 3G can be performed by, for example, the detection apparatus 100 shown in FIGS. 1 and 2 .

First, step S110 is executed, and the control unit 150 turns on the light-emitting element 110 . Specifically, as shown in FIG. 2 , in step S110 , the excitation light beam ELi provided by the light-emitting element 110 may be collimated into a parallel light beam through a collimating lens CL1 .

Next, step S120 is executed, the control unit 150 controls the depth distance dx of the resonant cavity of the filter unit FU of the first reflective optical thin film element 141 to be the first depth distance according to the excitation wavelength range, so that the object to be tested receives the main light emission The fluorescent light beam FLi is generated by the excitation light beam ELo whose wavelength falls within the excitation wavelength range. More specifically, as shown in FIGS. 2 and 3B , when the excitation light beam ELi is incident on the first reflective optical thin film element 141 , the control unit 150 controls the resonant cavity of the filter unit FU of the first reflective optical thin film element 141 . The depth distance dx is the first depth distance, and the value of the first depth distance corresponds to the value of the excitation band range, so the resonant cavity reflects the excitation beam ELo whose main emission wavelength falls within the excitation band range, and is received by the test object O to generate a fluorescent light beam FLi.

According to an embodiment of the present invention, the set value of the excitation wavelength range may be approximately between 400 nm and 700 nm to meet the specifications of various fluorescent reagents. The rated absorption excitation wavelength (peak value of excitation wavelength) of several commercially available fluorescent reagents and their corresponding rated fluorescence wavelength (peak value of fluorescence wavelength) are listed as follows: The excitation wavelength of green light (FAM) corresponds to 494 nm. To fluorescence wavelength 520nm, yellow light (Cy3) excitation wavelength 550nm corresponds to fluorescence wavelength 570nm, orange light (ROX) excitation wavelength 575nm corresponds to fluorescence wavelength 602nm, red light (Cy5) excitation wavelength 646nm corresponds to fluorescence wavelength 646nm Light wavelength 662nm. The so-called rated excitation wavelength (excitation wavelength peak) of a fluorescent reagent means that the fluorescent reagent reactant has a fluorescent effect on excitation light in a certain excitation wavelength range, but the rated excitation wavelength in the excitation wavelength range. The excitation wavelength has the best fluorescence generation effect. In other words, the fluorescent reagent reactant has the effect of generating fluorescence for excitation light near its rated excitation wavelength (ie, the excitation wavelength range), but the effect of generating fluorescence at the rated excitation wavelength is the best. In addition, when the excitation wavelength range is the wavelength range covered by the excitation wavelength range, the fluorescent reagent can be used in the detection device 100 , and the detection device 100 controls the first reflective optical system through the control unit 150 . The depth distance dx of the thin film element 141 enables the excitation beam ELo to excite the object to be tested O to produce better fluorescence generation effect.

Similarly, the so-called rated fluorescence wavelength (fluorescence wavelength peak) of a fluorescent reagent means that the fluorescence generated by the fluorescent reagent reactant for excitation light will fall within a certain fluorescence wavelength range, but in the reaction When the object is irradiated by the light of the rated excitation wavelength, the fluorescence wavelength generated by it will fall near the rated fluorescence wavelength (ie, the fluorescence wavelength range), but the rated fluorescence wavelength has the best fluorescence generation effect. Moreover, when the fluorescent wavelength range is the wavelength range covered by the detection wavelength range, the fluorescent reagent can be used in the detection device 100 , and the detection device 100 controls the second reflective type through the control unit 150 . The depth distance dx of the optical thin film element 142 further purifies the color purity of the fluorescent light beam FLo, so as to purify the characteristics of the fluorescent light beam FLo.

According to an embodiment of the present invention, the excitation wavelength range may be within a range of 40 nm including the rated excitation wavelength; according to another embodiment of the present invention, the excitation wavelength range may be within a range of 20 nm including the rated excitation wavelength; In yet another embodiment of the present invention, the excitation wavelength range may be within a range of 10 nm including the rated excitation wavelength; according to yet another embodiment of the present invention, the excitation wavelength range may be within a range of 6 nm including the rated excitation wavelength. In addition, according to an embodiment of the present invention, the excitation wavelength range is centered on the rated excitation wavelength and increases or decreases by a specific wavelength as the range, such as increasing or decreasing by 20 nm, or by increasing or decreasing by 10 nm, or by increasing or decreasing by 5 nm. For another example, increase or decrease by 3 nm. The above-mentioned commercially available green light (FAM) has the rated excitation wavelength of 494 nm corresponding to the rated fluorescence wavelength of 520 nm as an example, and the excitation wavelength range can be within the range of 40 nm including the rated excitation wavelength of 494 nm (for example, in the range of 460 nm to 500 nm). range, again for example in the range of 470 nm to 510 nm), or may be in the range of 20 nm including 494 nm (for example in the range of 480 nm to 500 nm, for example in the range of 490 nm to 510 nm), or may be In the range of 10 nm including 494 nm (eg, in the range of 490 nm to 500 nm), or may be in the range of 6 nm including 494 nm (eg, in the range of 490 nm to 496 nm); The excitation wavelength is centered at 494nm and a certain wavelength is increased or decreased as its range, such as within the range of 20nm (that is, within the range of 474nm to 514nm), or within the range of 10nm (that is, within the range of 484nm to 504nm) ), or within the range of 5 nm (that is, within the range of 489 nm to 499 nm), or within the range of 3 nm (that is, within the range of 491 nm to 497 nm).

Moreover, when the excitation light beam ELo needs to have a specific main emission wavelength, the first depth distance can be further defined. For example, when the main emission wavelength (ie, the excitation wavelength) of the excitation beam ELo is required to be about 494 nm, the first depth distance can be controlled to a value corresponding to 494 nm to achieve this purpose; for another example, when the excitation beam ELo needs to be excited When the main emission wavelength (ie, the excitation wavelength) of the light beam ELo is about 550 nm, the first depth distance can be controlled to another value corresponding to 550 nm to achieve this purpose, and so on. In this way, as long as the size of the first depth distance is adjusted, the desired excitation beam ELo can be obtained. Furthermore, according to an embodiment of the present invention, different sizes of the first depth distance of the resonant cavity of the filter unit FU of the first reflective optical thin film element 141 can be adjusted, that is, between the excitation wavelengths of two different color lights. For example, green to yellow, or yellow to orange, or orange to red; according to another embodiment of the present invention, different sizes of the first depth distance of the resonant cavity of the filter unit FU can be adjusted , the excitation wavelengths of three different colors of light can be switched, such as green, yellow and orange, or yellow, orange and red; according to another embodiment of the present invention, the resonant cavity of the filter unit FU can be adjusted The different sizes of the first depth distance can switch among the excitation wavelengths of four or more different color lights, such as green, yellow, orange and red.

In this way, the control unit 150 can set the value of the first depth distance according to the suitable wavelength range of the excitation beam ELo required by the type of fluorescent reagent contained in the object to be tested O, so as to effectively form the desired fluorescent light. The light beam FLi does not need to set up various filter modules composed of band-pass filters and/or various fluorescent channels as in the prior art, and the control unit 150 only needs to adjust the first reflective optical The first depth distance of the thin film element 141 can support the detection of various types of fluorescent reagents, so it is easy to update and expand the equipment. In addition, since the excitation beam ELo required by different analytes O can share the same optical path or fluorescent channel when performing the detection of a variety of different fluorescent reagents, it can also simplify the optical path and reduce production, assembly, maintenance, etc. Adjustment complexity while reducing product cost and improving production quality.

Similarly, since the range of the main emission spectrum of the fluorescent light beam FLi generated by the object to be tested O is also different with the different types of fluorescent reagents, the detection device 100 can also be located between the accommodating frame 120 and the accommodating frame 120. The configuration of the second reflective optical thin film element 142 between the light detection elements 130 is performed to perform step S130, and according to the detection wavelength range, the depth distance dx of the resonant cavity of the filter unit FU of the second reflective optical thin film element 142 is controlled to be The second depth distance is used to filter out the signal of noise light outside the specific wavelength range, and to purify the color purity of the fluorescent beam, so as to purify the characteristics of the fluorescent beam, so as to improve the detection accuracy.

According to an embodiment of the present invention, similar to the above and the principle of controlling the first reflective optical thin film element 141, as shown in FIG. 2 and FIG. 3B, when the fluorescent light beam FLi enters the second reflective optical thin film element 142, The control unit 150 controls the depth distance dx of the resonant cavity of the filter unit FU of the second reflective optical thin film element 142 to be the second depth distance, and the value of the second depth distance corresponds to the value of the detection wavelength range.

According to an embodiment of the present invention, the value of the detection wavelength range can be approximately between 450 nm and 730 nm to meet the specifications of various fluorescent reagents. Please refer to the above-mentioned rated absorption excitation of commercially available fluorescent reagents. Examples of wavelengths and the corresponding nominal fluorescence wavelengths they produce. In addition, when the wavelength range near the rated fluorescent wavelength corresponding to the specifications of different fluorescent reagents (that is, a certain fluorescent wavelength range) is the wavelength range covered by the detection wavelength range, the fluorescent reagent can be applied to this product. In the detection device 100, the detection device 100 controls the depth distance dx of the second reflective optical thin film element 142 through the control unit 150, thereby purifying the color purity of the fluorescent light beam FLo and purifying the characteristics of the fluorescent light beam FLo.

Furthermore, according to an embodiment of the present invention, the fluorescent wavelength range may be within a range of 40 nm including the rated fluorescent wavelength; according to another embodiment of the present invention, the fluorescent wavelength range may include the rated fluorescent wavelength According to another embodiment of the present invention, the fluorescent wavelength range can be within the range of 10 nm including the rated fluorescent wavelength; within the 6nm range of the rated fluorescence wavelength. In addition, according to an embodiment of the present invention, the range of the fluorescent wavelength range is centered on the rated fluorescent wavelength and a certain wavelength is increased or decreased as the range, such as increasing or decreasing by 20 nm, or by increasing or decreasing by 10 nm, or by increasing or decreasing 5nm, for example, increase or decrease by 3nm. The above-mentioned commercially available green light (FAM) has a rated excitation wavelength of 494 nm corresponding to a rated fluorescence wavelength of 520 nm as an example, and its fluorescence wavelength range can be within the range of 40 nm including the rated fluorescence wavelength of 520 nm (for example, from 485 nm to 520 nm). in the range of 525nm, for example in the range of 495nm to 535nm), or in the range of 20nm including 520nm (for example in the range of 505nm to 525nm, for example in the range of 515nm to 535nm), or It can be in the range of 10nm including 520nm (eg, in the range of 515nm to 525nm), or it can be in the range of 6nm including 520nm (eg, in the range of 518nm to 524nm); or, the fluorescence wavelength range is Taking the rated fluorescent wavelength 520nm as the center, increase or decrease a certain wavelength as the range, for example, within the range of 20nm (that is, within the range of 500nm to 540nm), or within the range of 10nm (that is, within the range of increase or decrease) In the range of 510nm to 530nm), or in the range of 5nm (that is, in the range of 515nm to 525nm), or in the range of 3nm (that is, in the range of 517nm to 523nm).

And when the fluorescent light beam FLo is required to have a specific main emission wavelength, the second depth distance can be further defined. For example, when the main emission wavelength (ie detection wavelength) of the fluorescent light beam FLo is required to be about 520 nanometers, the second depth distance can be controlled to a value corresponding to 520 nanometers to achieve this purpose; When the main emission wavelength (ie the detection wavelength) of the fluorescent light beam FLo is about 573 nm, the second depth distance can be controlled to another value corresponding to 573 nm to achieve this purpose, and so on. In this way, as long as the size of the second depth distance is adjusted, the desired fluorescent light beam FLo can be obtained. Furthermore, the absorption excitation wavelengths of commercially available fluorescent reagents and the corresponding fluorescence wavelengths generated by them are as described above. According to an embodiment of the present invention, the filter unit of the second reflective optical thin film element 142 can be adjusted Different sizes of the second depth distance of the resonant cavity of the FU can switch between the fluorescence wavelengths of two, three, four or more different colors of light, which is similar to adjusting the filter of the first reflective optical thin film element 141 The case of the second depth distance of the resonant cavity of the unit FU.

2 and 3G, the control unit 150 may perform step S140 to detect the light intensity of the fluorescent light beam FLo whose main emission wavelength falls within the detection wavelength range, and convert it into an electrical signal for subsequent analysis.

According to an embodiment of the present invention, the control unit 150 can set the value of the second depth distance according to the wavelength range of the main luminescence spectrum of the fluorescent reagent type contained in the object to be tested O, which can filter out the specific wavelength range. signal of noise light, and purify the characteristics of the fluorescent light beam FLo, without setting up a filter module composed of a band-pass filter, and the control unit 150 only needs to adjust the second reflective optical thin film element 142. The depth distance can support the detection of a variety of different types of fluorescent reagents, so it is easy to update and expand the equipment. In addition, since the fluorescent light beams FLo formed by different analytes O can share the same optical path during the detection of various types of fluorescent reagents, the optical path can also be simplified and the complexity of production and assembly can be reduced, thereby reducing the number of products. cost and improve production quality.

It should be noted that, in the above-mentioned embodiment, the control unit 150 controls the control method of the first reflective optical thin film element 141 and the second reflective optical thin film element 142 of the at least one reflective optical thin film element 140 to adjust at least one The size of the depth distance dx of the resonant cavity of the filter unit FU of the reflective optical thin film element 140 is an example, but the present invention is not limited to this. Some examples will be given below for illustration.

FIG. 5A is a schematic front view of another embodiment of the reflective optical thin film element of FIG. 2 . FIG. 5B is a schematic diagram of an embodiment of different reflective filter units FU1 , FU2 , and FU3 of the reflective optical thin film element of FIG. 5A . FIG. 5C is a schematic flowchart of a detection method when the reflective optical thin film element of FIG. 5A is used. Referring to FIGS. 5A to 5C , the reflective optical thin film element 540 is similar to the reflective optical thin film element 140 of FIG. 1 , and the main differences are as follows. As shown in FIG. 5A , in this embodiment, the first reflective optical thin film element 541 and the second reflective optical thin film element 542 of the at least one reflective optical thin film element 540 respectively include a plurality of filter regions FR1 and filter regions FR2, filter region FR3, the respective resonant cavities of the plurality of filter regions FR1, filter region FR2, filter region FR3, reflective filter unit FU1, reflective filter unit FU2, and reflective filter unit FU3 The depth distance d1, the actuation depth distance d2, and the actuation depth distance d3 are fixed values, respectively, which are the depth distances when the reflective filter unit is in the open state (not in the closed state) and can perform filter reflection. The operating depth distance d1 (or It is the reflective filter unit FU1, the reflective filter unit FU2, and the reflective filter unit that are located in different filter regions FR1, FR2, and FR3 with the same depth distance d2 and depth distance d3). The operating depth distance d1, the operating depth distance d2, and the operating depth distance d3 of the resonant cavity of the FU3 are different from each other. Please note that since FIG. 5A is a schematic diagram of the reflective optical thin film element 540 , the first reflective optical thin film element 541 and the second reflective optical thin film element 542 are respectively illustrated, but the operation of the first reflective optical thin film element 541 The depth distance d1 (or depth distance d2, depth distance d3) and the actuation depth distance d1 (or depth distance d2, depth distance d3) of the second reflective optical thin film element 542 do not need to be the same but can be different, and the two are often the same. Differently, because the absorption light wavelength of a screen reagent is usually shorter and its emission fluorescence wavelength is longer, so if two reflective filter units of the same specification are used, different operating depth and distance settings are required to obtain different results. Wavelength filter effect. For example, the green light (FAM) has an excitation wavelength of 494 nm and a fluorescence wavelength of 520 nm, and they correspond to the filter region FR1 of the first reflective optical thin film element 541 and the filter region FR1 of the second reflective optical thin film element 542 respectively. The filter region FR1 is the difference between the operating depth distance d1 (first depth distance) of the filter region FR1 of the first reflective optical film element 541 and the filter region FR1 of the second reflective optical film element 542 of the same specification. The actuation depth distance d1 (the second depth distance) is not the same.

In addition, the control unit 150 can also control the opening or closing of the reflective filter unit FU1, the reflective filter unit FU2, and the reflective filter unit FU3 located in different filter regions in the at least one reflective optical thin film element 540, to Further adjusting the range of the main emission wavelengths of the excitation light beam ELo and the fluorescent light beam FLo, so that the main emission wavelength of the excitation light beam ELo can fall within the excitation wavelength range and/or the main emission wavelength of the fluorescent light beam FLo can fall within the detection wavelength range. Inside. How the control unit 150 performs the detection method of FIG. 5C will be further explained below. Referring to FIG. 5C , in this embodiment, the detection method of FIG. 5C can be performed by, for example, the detection apparatus 100 shown in FIGS. 1 and 2 .

First, step S110 is executed, and the manner of executing step S110 is the same as that of the control method in FIG. 3G , which will not be repeated here.

Next, step S520 is executed, the control unit 150 controls the reflective filter unit located in the first filter area to be in an on state according to the excitation wavelength range, and controls the reflective filter units located in other filter areas outside the first filter area The unit is turned off, so that the object to be tested receives the excitation beam ELo with the main emission wavelength falling within the excitation wavelength range to generate the fluorescent beam FLi, wherein the depth distance of the resonant cavity of the reflective filter unit located in the first filter area is the first depth distance and is the actuation depth distance.

According to an embodiment of the present invention, the control unit 150 controls the reflective filter unit FU1 (or the reflective filter unit FU2 and the reflective filter unit FU3) of the first reflective optical thin film element 541 to be in an off state, for example, Static electricity is applied to the resonant cavity of the reflective filter unit FU1 (or the reflective filter unit FU2, the reflective filter unit FU3), and the reflective filter unit FU1 of the first reflective optical thin film element 541 is formed at this time. (or the reflective filter unit FU2 and the reflective filter unit FU3) the reflective films on the first interface S1 and the second interface S2 will collapse, causing these reflective filter units FU1 (or the reflective filter unit FU1) in the closed state to collapse. The depth distance of the resonant cavity of the filter unit FU2, the reflective filter unit FU3) becomes very narrow, so that the reflective filter unit FU1 (or the reflective filter unit FU2, the reflective filter unit FU1, the reflective filter unit FU2, the reflective filter unit FU1, the The wavelength of the outgoing light beam OL of the filter unit FU3) becomes very short, and falls outside the excitation band range or the detection band range, and its intensity will also be attenuated. In other words, when the incident light beam IL is incident on the reflective filter units FU1 (or the reflective filter unit FU2 and the reflective filter unit FU3 ) of the first reflective optical thin film element 541 in the off state, it can be filtered out. . In this way, when the reflective filter unit located in a certain filter area (for example, the first filter area) in the first reflective optical thin film element 541 is set to be in an on state, only the filter unit will pass through the filter. The excitation light beam of the reflective filter unit in the region (ie: the first filter region) can become the outgoing light beam OL of the first reflective optical thin film element 541, and since the first reflective optical thin film element 541 in this embodiment The action depth distance of the resonant cavity of the filter unit located in the first filter area is the first depth distance, and the value of the first depth distance corresponds to the value of the excitation wavelength range, so the main emission wavelength of the excitation beam ELo can fall within Excitation band range.

More specifically, in this embodiment, the control unit 150 can select one of the filter region FR1 , the filter region FR2 and the filter region FR3 of the first reflective optical thin film element 541 based on the excitation wavelength range to be In the first reflective filter area, one of the actuation depth distance d1, the actuation depth distance d2, and the actuation depth distance d3 is selected as the first depth distance. In this way, the control unit 150 can set the first depth distance through the selection of the filter region FR1 , the filter region FR2 and the filter region FR3 of the first reflective optical thin film element 541 , and thereby make the excitation beam ELo The main emission wavelength can fall within the excitation wavelength range.

According to an embodiment of the present invention, the operating depth d1 of the filter region FR1 of the first reflective optical thin film element 541 is larger than the operating depth d2 of the filter region FR2 and the operating depth d3 of the filter region FR3, so when the When the value of the required excitation wavelength range is large, the filter region FR1 with a larger operating depth distance d1 can be selected as the first filter region; on the contrary, when the value of the required excitation wavelength range is small, the filter region FR1 can be selected as the first filter region. The filter region FR2 with the smaller actuation depth distance d2 or the filter region FR3 with the actuation depth distance d3 is selected as the first filter region. According to another embodiment of the present invention, the action depth distance of the filter region FR3 is smaller than the action depth distance d1 of the filter region FR1 and the action depth distance d2 of the filter region FR2, so when the required excitation wavelength range is smaller , the filter region FR3 with a smaller depth distance d3 can be selected as the first filter region; on the contrary, when the value of the required excitation wavelength range is larger, a filter region with a larger depth distance d1 can be selected. The light region FR1 or the filter region FR2 with the depth distance d2 is used as the first filter region. In this way, as long as an appropriate filter region is selected, the desired excitation beam ELo can be obtained.

Next, step S530 is executed. According to an embodiment of the present invention, the control unit 150 controls the reflective filter unit located in the second filter region of the second reflective optical thin film element 542 to be in an on state according to the detection wavelength range, and controls The reflective filter units located in other filter areas outside the second filter area are in an off state, wherein the depth distance of the resonant cavity of the reflective filter units located in the second filter area is the second depth distance.

Similarly, since the reflective filter units in other filter areas outside the second filter area are in a closed state, only the fluorescent light beam FLo passing through the reflective filter units in the second filter area can become the first filter unit. The outgoing beams OL of the two reflective optical thin film elements 542, and since the depth distance of the resonant cavity of the reflective filter unit located in the second filter region is the second depth distance, and the value of the second depth distance is related to the detection band range The value of , so the main emission wavelength of the fluorescent light beam FLo can fall within the detection band range.

According to an embodiment of the present invention, in this embodiment, the control unit 150 may also select one of the filter region FR1, the filter region FR2, and the filter region FR3 as the second filter region based on the detection wavelength range. , that is, one of the action selection depth distance d1, the action depth distance d2, and the action depth distance d3 is selected as the second depth distance. In this way, the control unit 150 can also set the second depth distance through the selection of the filter region, thereby enabling the main emission wavelength of the fluorescent light beam FLo to fall within the detection wavelength range. In this way, the desired fluorescent light beam FLo can be obtained as long as a filter region with an appropriate operating depth distance is selected. According to another embodiment of the present invention, when the excitation spectrum suitable for the first fluorescent reagent of a first analyte falls within the first excitation wavelength range (the suitable excitation wavelength range for the first fluorescent reagent) and the emission When the main emission wavelength of the fluorescent light falls within the first detection wavelength range (the detection wavelength range suitable for the first fluorescent reagent), the reflective filter unit FU1 of the filter region FR1 of the first reflective optical thin film element 541 can be The reflective filter unit FU1 of the filter region FR1 of the second light reflective thin film element 542 can be set so that its main emission wavelength at least partially falls within the first excitation wavelength range It falls within the first detection wavelength range; when the excitation spectrum suitable for the second fluorescent reagent of a second analyte falls within the second excitation wavelength range (the suitable excitation wavelength range for the second fluorescent reagent) and its emission When the main emission wavelength of the fluorescence falls within the second detection wavelength range (the detection wavelength range suitable for the second fluorescent reagent), the reflective filter unit FU2 in the filter region FR2 of the first reflective optical thin film element 541 can be set So that its main emission wavelength at least partially falls within the second excitation wavelength range, and the reflective filter unit FU2 in the filter region FR2 of the second reflective optical thin film element 542 can be set so that its main emission wavelength at least partially falls within The second detection wavelength range; when the excitation spectrum suitable for the third fluorescent reagent of a third analyte falls within the third excitation wavelength range (the suitable excitation wavelength range for the third fluorescent reagent) and the fluorescence emitted by it When its main emission wavelength falls within the third detection wavelength range (the detection wavelength range suitable for the third fluorescent reagent), the reflective filter unit FU3 of the filter region FR3 of the first reflective optical thin film element 541 can be set to its The main emission wavelength at least partially falls within the third excitation wavelength range, and the reflective filter unit FU3 in the filter region FR3 of the second reflective optical thin film element 542 can be set so that its main emission wavelength at least partially falls within the third excitation wavelength range. Detection wavelength range; wherein the first fluorescent reagent, the second fluorescent reagent and the third fluorescent reagent are different fluorescent reagents. According to another embodiment of the present invention, the first excitation wavelength range (excitation wavelength range suitable for the first fluorescent reagent), the second excitation wavelength range (excitation wavelength range suitable for the second fluorescent reagent) and the third excitation wavelength range The wavelength range (the suitable excitation wavelength range for the third fluorescent reagent), and the corresponding first detection wavelength ranges (the suitable detection wavelength range for the first fluorescent reagent), the second detection wavelength range (the second fluorescent reagent The detection wavelength range suitable for the photoreagent) and the third detection wavelength range (the detection wavelength range suitable for the third fluorescent reagent) can be achieved by setting or setting the resonant cavity depth distance of the reflective filter unit respectively.

2 and 5C, the control unit 150 may perform step S140 to detect the light intensity of the fluorescent light beam FL whose main emission wavelength falls within the detection wavelength range, and convert it into an electrical signal for subsequent analysis.

In addition, it is worth noting that although the filter regions of the first reflective optical thin film element 541 and the second reflective optical thin film element 542 and the reflective filter units included in them use the same diagram ( FIG. 5A ) to However, the first reflective optical thin film element 541 and the second reflective optical thin film element 542 are two different elements, so the filter region FR1, filter region FR2, filter region FR3 of the first optical thin film element 541 and The second optical thin film element 542 does not need to be the same in shape, size, cavity depth, distance and arrangement of the filter region FR1, filter region FR2, filter region FR3, and its respective reflective filter unit FU1, reflective filter The shape, size, arrangement, depth, distance, quantity and optical characteristics of the optical unit FU2 and the reflective filter unit FU3 do not need to be the same. Furthermore, as shown in FIG. 5B , although the number of filter regions of the first reflective optical thin film element 541 and the second reflective optical thin film element 542 of the at least one reflective optical thin film element 540 is exemplified by three, the present The invention is not limited to this; according to another embodiment of the present invention, the filter regions of the first reflective optical thin film element 541 and the second reflective optical thin film element 542 of the at least one reflective optical thin film element 540 and the filter regions thereof are not limited thereto. The number of included reflective filter units may be two, four, five or six or more. In other embodiments, the filter area of the at least one reflective optical thin film element 540 and the number of reflective filter units included in the filter area can also be determined according to the number of fluorescent reagent types, and then the number of fluorescent reagent types can be determined. Features to adjust the depth distance of each filter area at the same time to meet the needs of the actual product.

, when the first reflective optical thin film element 541 and/or the second reflective optical thin film element 542 of the reflective optical thin film element 540 are used in the detection device 100, the control unit 150 of the detection device 100 can also The suitable wavelength range of the excitation beam ELo (ie the excitation wavelength range) required by the type of fluorescent reagent contained in it or the range of the main luminescence spectrum of the fluorescent beam FLo generated by the object to be tested (ie the detection wavelength range), to Select the appropriate filter area of the first reflective optical thin film element 541 and/or the filter area of the second reflective optical thin film element 542 to be in an open state, so that the excitation beam ELi or the fluorescent beam FLi can pass through the The filter area of the depth distance to thereby form the desired excitation beam ELo and/or fluorescent beam FLo. In this way, the detection device 100 can support the detection of a variety of different types of fluorescent reagents, so there is no need to set up a filter module composed of a band-pass filter, and it is easy to update and expand the equipment, thereby achieving the aforementioned detection device. The effects and advantages of 100 will not be repeated here.

Although the detection device 100 according to the embodiment of FIG. 1 and FIG. 2 includes a light-emitting element 110 , an accommodating frame 120 , a light detection element 130 and at least one reflective optical thin film element 140 , and the at least one reflective optical thin film element 140 includes The first reflective optical thin film element 141 and the second reflective optical thin film element 142, but according to another embodiment of the present invention, the at least one reflective optical thin film element 140 only includes the first reflective optical thin film element 141 or only one of the second reflective optical thin film elements 142 is included. According to an embodiment of the present invention, in the implementation in which the at least one reflective optical thin film element 140 only includes the first reflective optical thin film element 141 and does not include the second reflective optical thin film element 142 (not shown in the figure) (shown), as long as the quality of the fluorescent beam of the object to be tested O is good enough or the optical path design of the fluorescent channel is good enough or there are other reasons to make the light detected by the photodetecting element 130 meet the specifications, it can be correctly It also has the effect of improving the shortcomings of the prior art. At this time, the fluorescent channel is composed of the light emitting element 110, the first reflective optical thin film element 141, the accommodating frame 120 (or the object to be tested O), and the light detecting element. 130 between each section of the optical path is formed. According to yet another embodiment of the present invention, in the implementation in which the at least one reflective optical thin film element 140 includes only the first reflective optical thin film element 141 but not the second reflective optical thin film element 142 (Fig. (not shown), a conventional band-pass filter (not shown) may also be included to replace the second reflective optical thin film element 142 in the embodiment of FIG. 1 and FIG. 2 to filter out the detection wavelength range. It also has the effect of improving the shortcomings of the prior art; at this time, the fluorescent channel is composed of the light-emitting element 110, the first reflective optical thin film element 141, the accommodating frame 120 (or the object to be tested O), the band-pass filter It is constituted by each section of optical path between the chip (not shown in the figure) and the light detection element 130 . According to an embodiment of the present invention, in the implementation in which the at least one reflective optical thin film element 140 only includes the second reflective optical thin film element 142 and does not include the first reflective optical thin film element 141, as long as the light is emitted The quality of the excitation beam of the element 110 is good enough, the quality of the fluorescent beam of the object to be tested O is good enough, the optical path design of the fluorescent channel is good enough, or there are other reasons, so that the light detected by the light detection element 130 can meet the specifications If so, the detection can be performed correctly, which also has the effect of improving the shortcomings of the prior art; at this time, the fluorescent channel is composed of the light-emitting element 110, the accommodating frame 120 (or the object to be tested O), the second reflective optical film Each segment of the optical path between the element 142 and the light detection element 130 is formed. According to yet another embodiment of the present invention, in the implementation in which the at least one reflective optical thin film element 140 only includes the second reflective optical thin film element 142 and does not include the first reflective optical thin film element 141 (Fig. (not shown), a conventional band-pass filter (not shown) can also be included to replace the first reflective optical thin film element 141 in the embodiments of FIG. 1 and FIG. 2 to filter out the excitation wavelength range. It also has the effect of improving the shortcomings of the prior art. At this time, the fluorescent channel is composed of the light-emitting element 110, the band-pass filter (not shown), the accommodating frame 120 (or the object to be tested O), the second Each section of the optical path between the reflective optical thin film element 142 and the light detection element 130 is formed. Although the above-mentioned embodiment of the detection device 100 includes at least one reflective optical thin film element 140, and the at least one reflective optical thin film element 140 includes a first reflective optical thin film element 141 and a second reflective optical thin film element 142, but according to another embodiment of the present invention, the at least one reflective optical thin film element 140, the first reflective optical thin film element 141 and the second reflective optical thin film element 142 in the foregoing embodiments are respectively replaced with at least one reflective optical thin film element 142. A reflective optical thin film element 540 , a first reflective optical thin film element 541 and a second reflective optical thin film element 542 can also be established.

To sum up, the detection device of the present invention can support the detection of various types of fluorescent reagents through the configuration of the optical thin film elements, without the need to set up a filter module composed of band-pass filters, and it is also easy to perform Equipment updates and expansions. In addition, since the excitation beams (or the formed fluorescent beams) required by different analytes can share the same optical path and/or fluorescent channel when performing the detection of a variety of different fluorescent reagents, it is also possible to Simplify the optical path and reduce the complexity of production assembly, thereby reducing product cost and improving production quality.

Please refer to FIG. 6 , which is a block diagram illustrating an application example of a fluorescent real-time quantitative polymerase chain reaction system of the detection device according to the present invention. The detection device 100 of the present invention can be applied to a fluorescent real-time quantitative polymerase chain reaction system 10, wherein the fluorescent real-time quantitative polymerase chain reaction system 10 includes the detection device 100, a temperature control module 700 and a Analysis module 800 . According to an application example of the present invention, as shown in FIG. 7 , the temperature control module 700 has a heating module 710 and a heat dissipation module 720, and the required thermal cycle is generated under the control of the control unit and is to be measured. The temperature of the object is controlled, so that the amount of the detection object in the object to be tested is multiplied after each thermal cycle, and the amount of the detection object in the test object becomes the N power of 2 after N thermal cycles; wherein, according to the present invention In one embodiment, the temperature control module 700 has a temperature sensor 730 for sensing a temperature on the system, such as the temperature of the accommodating frame 120 or the object to be measured, which can be treated through the accommodating frame 120 The measured object is temperature controlled; and according to an embodiment of the present invention, the temperature sensor 730 is connected to the accommodating frame 120 of the detection device 100 to sense the temperature of the accommodating frame 120 ; and according to another embodiment of the present invention , the temperature sensor 730 is connected with the sleeve structure 121 of the accommodating frame 120 to sense the temperature of the sleeve structure 121 . The detection device 100 includes a light-emitting element 110 , a light-detecting element 130 , and at least one reflective optical thin-film element 140 ( 540 ), which is a fluorescent light disposed between the light-emitting element 110 and the light-detecting element 130 on the channel, and a control unit 150 coupled to the at least one reflective optical thin film element 140 (540) for controlling the wavelength range of the reflected light of the at least one reflective optical thin film element 140 (540), The details, operation methods and various implementation aspects thereof have been described above, and will not be repeated here. The analysis module 800, under the control of the control unit 150, monitors, records and quantitatively and/or qualitatively analyzes the temperature change and fluorescence change of the substance to be tested during the entire polymerase chain reaction process in real time; According to an embodiment of the invention, the analysis module 800 uses an analysis software to analyze; according to an embodiment of the invention, the analysis module 800 analyzes the signal measured by the light detection element 130 .

Although the present invention has been disclosed above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.

10: Fluorescent real-time quantitative polymerase chain reaction system 100: Detection device 110: Light-emitting element 120: accommodating frame 121: Sleeve structure 130: Light detection element 140, 540: Reflective optical thin film element 141, 541: The first reflective optical thin film element 142, 542: The second reflective optical thin film element 150: Control unit 700: Temperature control module 710: Heating Module 720: cooling module 730: Temperature sensor 800: Analysis Module A, B, C, D, E: point CL1, CL2: collimating lens d1, d2, d3: Action depth distance du, dv: thickness dx: depth distance ELi, ELo: Excitation beam EX:Export FLi, FLo: Fluorescent beam FR1, FR2, FR3: filter area FU, FU1, FU2, FU3: Reflective filter unit IL: Incident beam IN: entrance HS1, HS2: Shell O: analyte OL, OL1, OL2, OL3: Outgoing beam OP: opening L0: outer layer L1: first dielectric layer L2: Second dielectric layer L3: The third dielectric layer N1: The first normal direction N2: The first normal direction S1: The first interface S2: Second interface S3: The third interface S110, S120, S130, S140, S520, S530: Steps θ0: Incident angle θ1: The first included angle θ2: Second included angle θx: refraction angle α1: The first incident angle α2: Second angle of incidence

FIG. 1 is a system block diagram of a detection apparatus according to an embodiment of the present invention. FIG. 2 is a schematic structural diagram of a detection apparatus of FIG. 1 . FIG. 3A is a schematic front view of an embodiment of the reflective optical thin film element of FIG. 2 . FIG. 3B is a schematic diagram of an optical path when an incident light beam is vertically incident on an embodiment of a reflective filter unit of the reflective optical thin film element of FIG. 3A . FIG. 3C is a schematic diagram of an optical path when an incident light beam is obliquely incident on the reflective filter unit of FIG. 3B . 3D to 3F are schematic diagrams illustrating the working principle of the reflective optical thin film element. FIG. 3G is a schematic flowchart of a detection method when the reflective optical thin film element of FIG. 3A is used. FIG. 4A is a schematic diagram of the optical path of the detection device of FIG. 2 when the incident light beam is an excitation light beam. 4B is a schematic diagram of the optical path of the detection device of FIG. 2 when the incident light beam is a fluorescent light beam. FIG. 4C is a partial enlarged schematic view of the sleeve structure of FIG. 4A . FIG. 4D is a partial enlarged schematic view of another sleeve structure of FIG. 4A . FIG. 5A is a schematic front view of another embodiment of the reflective optical thin film element of FIG. 2 . FIG. 5B is a schematic diagram of an embodiment of a different reflective filter unit of the reflective optical thin film element of FIG. 5A . FIG. 5C is a schematic flowchart of a detection method when the reflective optical thin film element of FIG. 5A is used. 6 is a block diagram of an application example of a fluorescent real-time quantitative polymerase chain reaction system of the detection device according to the present invention. FIG. 7 is a system block diagram of an embodiment of the temperature control module in FIG. 6 .

100: Detection device

110: Light-emitting element

120: accommodating frame

121: Sleeve structure

130: Light detection element

140, 540: Reflective optical thin film element

141, 541: The first reflective optical thin film element

142, 542: The second reflective optical thin film element

CL1, CL2: collimating lens

ELi, ELo: Excitation beam

EX:Export

FLi, FLo: Fluorescent beam

HS1, HS2: Shell

IN: entrance

OP: opening

Claims (12)

A detection device, comprising: a light-emitting element; a light detection element; At least one reflective optical thin film element is disposed on the fluorescent channel between the light-emitting element and the light-detecting element; and a control unit, coupled to the at least one reflective optical thin film element, for controlling the wavelength range of the reflected light of the at least one reflective optical thin film element, wherein each of the at least one reflective optical thin film element Including one or more reflective filter units, and each of the one or more reflective filter units has a resonant cavity, wherein the at least one optical thin film element includes a plurality of filter regions, each of the plurality of filter The light area includes one or more of the reflective filter units, and the resonant cavities of the one or more reflective filter units located in the same filter area have the same operating depth distance from each other, and are located in different places. The operating depth distances of the resonant cavities of one or more of the reflective filter units in the filter region are different from each other. The detection device according to claim 1, wherein the plurality of filter regions includes a first filter region, and the reflective filter unit located in the first filter region is used to reflect the main emission wavelength drop. light in an excitation wavelength range. The detection device according to claim 1, wherein the plurality of filter regions includes a second filter region, and the reflected light of the reflective filter unit located in the second filter region is controlled by the control The control of the unit falls within a detection band range. The detection device according to claim 2, further comprising: An accommodating frame is used for accommodating an object to be tested, and the accommodating frame has an opening for receiving part of the excitation beam whose main emission wavelength falls within the excitation wavelength range. A detection method, suitable for a detection device, the detection device includes a light-emitting element, a light detection element, a control unit and at least one reflective optical thin film element, wherein the at least one reflective optical thin film element includes one or more a reflective filter unit, and the reflective filter unit has a resonant cavity, the at least one reflective optical thin film element is disposed on the fluorescent channel between the light-emitting element and the light-detecting element, and The detection method includes: Using the light-emitting element to provide an excitation beam, wherein the excitation beam is used to generate a fluorescent beam after irradiating an object to be tested; receiving the fluorescent light beam with the light detection element; A plurality of filter regions are provided on the at least one optical film element, and each of the plurality of filter regions includes one or more of the reflective filter units and is located in one or more of the same filter regions The operating depth distances of the resonant cavities of the reflective filter units are the same as each other, and the operating depth distances of the resonant cavities of one or more of the reflective filter units located in different filter regions are different from each other; as well as The control unit is used to control the state of each of the plurality of filter regions, so as to filter out part of the wavelength range of the incident light beam, and the incident light beam is one of the excitation light beam and the fluorescent light beam, and The at least one reflective optical thin film element is used to filter out part of the wavelength range of the incident light beam, and the one or more reflective optical filter units are used to filter out the part of the wavelength band range of the incident light beam. The detection method according to claim 5, wherein the plurality of filter regions includes a first filter region, and further comprises the following step: using the control unit to control the reflection located in the first filter region A filter unit is used to make the reflected light fall within an excitation wavelength range. The detection method according to claim 5, wherein the plurality of filter areas includes a second filter area, and further includes the following step: using the control unit to control the reflection located in the second filter area A filter unit is used to make the reflected light fall within a detection wavelength range. The detection method according to claim 5, wherein the detection device further comprises: The accommodating frame is used for accommodating the object to be tested, and the accommodating frame has an opening, and further includes the following steps: forming an optical path by using the opening to form a fluorescent channel. A fluorescent real-time quantitative polymerase chain reaction system, comprising: A detection device, a temperature control module and an analysis module, wherein The detection device includes: a light-emitting element; a light detection element; At least one reflective optical thin film element is disposed on the fluorescent channel between the light-emitting element and the light-detecting element; and a control unit, coupled to the at least one reflective optical thin film element, for controlling the wavelength range of the reflected light of the at least one reflective optical thin film element, wherein each of the at least one reflective optical thin film element Including one or more reflective filter units, and each of the one or more reflective filter units has a resonant cavity, wherein the at least one optical thin film element includes a plurality of filter regions, each of the plurality of filter The light area includes one or more of the reflective filter units, and the resonant cavities of the one or more reflective filter units located in the same filter area have the same operating depth distance from each other, and are located in different places. The actuation depth distances of the resonant cavities of one or more of the reflective filter units in the filter region are different from each other; The temperature control module is used to control a temperature of the system, and has a heating module, and The analysis module is used for analyzing a signal from the light detection element. The fluorescent real-time quantitative polymerase chain reaction system according to claim 9, wherein the at least one reflective optical thin film element includes a first reflective optical thin film element for reflecting the emission whose main emission wavelength falls within the excitation wavelength range The light beam and a second reflective optical thin film element are used to reflect the outgoing light beam whose main emission wavelength falls within the detection wavelength range. The fluorescent real-time quantitative polymerase chain reaction system according to claim 10, wherein the detection device further comprises an accommodating frame for accommodating a test object, and the accommodating frame has an opening for A part of the excitation beam whose main emission wavelength falls within the excitation wavelength range is received. The fluorescent real-time quantitative polymerase chain reaction system according to claim 9, wherein the temperature control module further has a temperature sensor and a heat dissipation module.

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