TW202147396A - Substrate processing method, substrate processing device, and storage medium - Google Patents

Substrate processing method, substrate processing device, and storage medium Download PDF

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TW202147396A
TW202147396A TW110109237A TW110109237A TW202147396A TW 202147396 A TW202147396 A TW 202147396A TW 110109237 A TW110109237 A TW 110109237A TW 110109237 A TW110109237 A TW 110109237A TW 202147396 A TW202147396 A TW 202147396A
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substrate
workpiece
film
unit
photoresist film
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TW110109237A
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Chinese (zh)
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川上真一路
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日商東京威力科創股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Abstract

An object of the invention is to form fine patterns more precisely. A substrate processing method includes: forming a resist film on the surface of a substrate, forming an interface control film by supplying a process liquid containing a water-soluble polymer onto the surface of the resist film on the substrate, heating the substrate on which the interface control film has been formed, and subjecting the resist film formed on the heated substrate to exposure.

Description

基板處理方法、基板處理裝置及記錄媒體Substrate processing method, substrate processing apparatus, and recording medium

本揭示發明有關基板處理方法、基板處理裝置及記錄媒體。The present invention discloses a substrate processing method, a substrate processing apparatus and a recording medium.

專利文獻1揭示一種曝光裝置，其使用來自EUV光源之EUV光。 〔先前技術文獻〕Patent Document 1 discloses an exposure apparatus that uses EUV light from an EUV light source. [Prior Art Literature]

〔專利文獻1〕日本特開2009-43906號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 2009-43906

〔發明欲解決之課題〕[The problem to be solved by the invention]

本揭示發明提供一種技術，可更精度良好地形成細微圖案。 〔解決課題之手段〕The present disclosure provides a technique for forming fine patterns with higher precision. [Means of Solving Problems]

依本揭示發明之一態樣的基板處理方法，包含：在基板之表面形成光阻膜；對該基板之該光阻膜之表面，供給含有水溶性聚合物的處理液，而形成界面控制膜；將形成有該界面控制膜之該基板進行加熱；將加熱後之該基板上形成的該光阻膜進行曝光。 〔發明之效果〕A substrate processing method according to an aspect of the present invention includes: forming a photoresist film on a surface of a substrate; supplying a treatment solution containing a water-soluble polymer to the surface of the photoresist film on the substrate to form an interface control film ; heating the substrate on which the interface control film is formed; exposing the photoresist film formed on the substrate after heating. [Effect of invention]

依本揭示發明，可提供一種能更精度良好地形成細微圖案的技術。According to the present invention, it is possible to provide a technology capable of forming fine patterns with higher precision.

以下針對各種的例示實施態樣進行說明。Various exemplary embodiments will be described below.

一例示實施態樣提供一種基板處理方法。此基板處理方法包含下述步驟：在基板之表面形成光阻膜；對該基板之該光阻膜之表面，供給含有水溶性聚合物之處理液，而形成界面控制膜；將形成有該界面控制膜之該基板進行加熱；將加熱後之該基板上形成的該光阻膜進行曝光。An exemplary embodiment provides a substrate processing method. The substrate processing method includes the following steps: forming a photoresist film on the surface of the substrate; supplying a treatment solution containing a water-soluble polymer to the surface of the photoresist film on the substrate to form an interface control film; forming the interface The substrate of the control film is heated; the photoresist film formed on the substrate after the heating is exposed.

依上述基板處理方法，在光阻膜之表面形成有界面控制膜的狀態下，進行基板之加熱，然後將光阻膜曝光。其結果，由於防止光阻膜之成分因為加熱而發生不均勻分布・分離等，因此可精度良好地進行使用光阻膜之細微圖案形成。According to the above-mentioned substrate processing method, in a state where the interface control film is formed on the surface of the photoresist film, the substrate is heated, and then the photoresist film is exposed to light. As a result, since the components of the photoresist film are prevented from being unevenly distributed and separated due to heating, fine pattern formation using the photoresist film can be performed with high precision.

該加熱可設定為在有機溶劑蒸氣之環境氣體中進行的態樣。The heating can be set to be carried out in the atmosphere of the organic solvent vapor.

如上述，在有機溶劑蒸氣之環境氣體中進行基板之加熱，藉此可進一步抑制光阻膜之成分的不均勻分布・分離。As described above, the heating of the substrate is performed in the atmosphere of the organic solvent vapor, thereby further suppressing uneven distribution and separation of the components of the photoresist film.

該加熱可設定為在氮、稀有氣體及二氧化碳中任一環境氣體中進行的態樣。The heating can be set to be carried out in any ambient gas among nitrogen, noble gas, and carbon dioxide.

如上述，在氮、稀有氣體及二氧化碳中任一環境氣體中進行基板之加熱，藉此可進一步抑制光阻膜之成分的不均勻分布・分離。As described above, the heating of the substrate is performed in an ambient gas including nitrogen, rare gas, and carbon dioxide, thereby further suppressing uneven distribution and separation of the components of the photoresist film.

又，可設定為更包含下述步驟的態樣：在該加熱之後且於該曝光之前，去除該界面控制膜。Moreover, it can be set as the aspect which further includes the following step: After the heating and before the exposure, the interface control film can be removed.

藉由在曝光之前去除界面控制膜，可抑制在加熱時發生光阻膜之成分的不均勻分布・分離。又，由於在曝光時將不必考慮界面控制膜而進行光量的調整等，因此可更簡單地實現精度良好之細微圖案形成。By removing the interface control film before exposure, uneven distribution and separation of the components of the photoresist film during heating can be suppressed. Moreover, since it is not necessary to consider the interface control film at the time of exposure, and adjustment of light quantity etc. is performed, it becomes possible to implement|achieve fine pattern formation with high precision more easily.

該曝光可設定為藉由EUV光進行曝光的態樣。This exposure can be set as a form of exposure by EUV light.

進行使用EUV光之曝光時，必須使光阻膜減薄。在此種情形，光阻膜之成分的不均勻分布・分離對圖案化之影響變大。因此，上述藉由形成界面控制膜以防止光阻膜之成分因為加熱而發生不均勻分布・分離等的防止效果，在使用EUV光進行曝光時特別有功效。When performing exposure using EUV light, the photoresist film must be thinned. In such a case, the uneven distribution and separation of the components of the photoresist film have a great influence on the patterning. Therefore, the above-mentioned preventive effect of preventing uneven distribution and separation of the components of the photoresist film due to heating by forming the interface control film is particularly effective when exposing with EUV light.

一例示實施態樣，提供一種基板處理裝置。此基板處理裝置包含：光阻液供給部，在基板之表面供給光阻液；聚合物供給部，在該基板之表面供給含有水溶性聚合物之處理液；加熱處理部，將該基板加熱；及控制部；該控制部執行下述處理：控制該光阻液供給部，俾對該基板之表面形成光阻膜；控制該聚合物供給部，俾在該基板之該光阻膜之表面形成界面控制膜；控制該加熱處理部，俾將該形成有界面控制膜之基板在曝光前進行加熱。In an exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus comprises: a photoresist liquid supply part for supplying the photoresist liquid on the surface of the substrate; a polymer supply part for supplying a treatment liquid containing a water-soluble polymer on the surface of the substrate; a heating treatment part for heating the substrate; and a control unit; the control unit performs the following processes: controlling the photoresist liquid supply unit to form a photoresist film on the surface of the substrate; controlling the polymer supply unit to form a photoresist film on the surface of the substrate an interface control film; the heat treatment part is controlled so that the substrate on which the interface control film is formed is heated before exposure.

上述基板處理裝置，於曝光前，在光阻膜之表面形成有界面控制膜的狀態下，進行基板之加熱，再將後來的光阻膜曝光。其結果，由於防止光阻膜之成分因為加熱而發生不均勻分布・分離等，故可精度良好地進行使用光阻膜之細微圖案形成。In the above-mentioned substrate processing apparatus, before exposure, the substrate is heated in a state where the interface control film is formed on the surface of the photoresist film, and the subsequent photoresist film is exposed to light. As a result, since the components of the photoresist film are prevented from being unevenly distributed and separated due to heating, fine pattern formation using the photoresist film can be performed with high precision.

又，另一例示實施態樣，提供一種電腦可讀取之記錄媒體，儲存用以使裝置執行上述基板處理方法之程式。In another exemplary embodiment, a computer-readable recording medium is provided, which stores a program for causing the apparatus to execute the above-mentioned substrate processing method.

以下參照圖式，針對各種的例示實施態樣進行詳細的說明。在各圖式中，對同一或相當的部分標註同一符號。Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In each drawing, the same symbol is attached to the same or corresponding part.

［基板處理系統］ 圖1所示之基板處理系統1，係對基板（工件W）施行感光性被覆膜之形成、該感光性被覆膜之曝光、及該感光性被覆膜之顯影的系統。[Substrate processing system] The substrate processing system 1 shown in FIG. 1 is a system for forming a photosensitive coating film, exposing the photosensitive coating film, and developing the photosensitive coating film on a substrate (workpiece W).

處理對象之工件W為例如半導體用的基板。基板的一例為矽晶圓。工件W形成圓形亦可。又，處理對象之工件W為玻璃基板、遮罩基板、FPD（Flat Panel Display，平面顯示器）等亦可。例如，工件W可選擇能適用EUV微影（Extreme ultraviolet lithography，極紫外光源微影）的材料，此EUV微影使用波長在10nm～100nm左右之範圍的EUV光。例如，EUV光可採用波長13.5nm的光。又，作為形成於工件W的光阻膜，採用EUV微影用光阻膜亦可。因此，光阻膜之形成所使用的光阻液（化學藥液），採用對EUV光具有感光性者。又，可採用能使用於此種EUV微影用光阻膜之公知的光阻液。The workpiece W to be processed is, for example, a substrate for semiconductors. An example of the substrate is a silicon wafer. The workpiece W may be formed in a circular shape. In addition, the workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like. For example, the workpiece W can select a material suitable for EUV lithography (Extreme ultraviolet lithography, extreme ultraviolet lithography). This EUV lithography uses EUV light with a wavelength in the range of about 10 nm to 100 nm. For example, EUV light may employ light having a wavelength of 13.5 nm. In addition, as the photoresist film formed on the workpiece|work W, the photoresist film for EUV lithography may be used. Therefore, the photoresist solution (chemical solution) used in the formation of the photoresist film is one that has photosensitivity to EUV light. In addition, a known photoresist liquid that can be used for such a photoresist film for EUV lithography can be used.

基板處理系統1具備塗佈・顯影裝置2及曝光裝置3。曝光裝置3係將形成於工件W（基板）上之光阻膜（感光性被覆膜）進行曝光處理。具體而言，以液浸曝光等方法，對光阻膜之曝光對象部分照射能量線。塗佈・顯影裝置2係在利用曝光裝置3進行曝光處理前，於工件W（基板）之表面形成光阻膜，並在曝光處理後，進行光阻膜之顯影處理。具體而言，藉由液浸曝光等方法，對光阻膜之曝光對象部分選擇性地照射能量線。作為能量線，除了上述EUV光之外，可舉例如氟化氬（ArF）準分子雷射、氟化氪（KrF）準分子雷射、g線、i線等。如前述，基板處理系統1之曝光處理，不限於以EUV光進行的處理。The substrate processing system 1 includes a coating/developing device 2 and an exposure device 3 . The exposure apparatus 3 exposes the photoresist film (photosensitive coating film) formed on the workpiece W (substrate). Specifically, the exposure target portion of the photoresist film is irradiated with energy rays by methods such as liquid immersion exposure. The coating/developing apparatus 2 forms a photoresist film on the surface of the workpiece W (substrate) before the exposure treatment by the exposure apparatus 3, and performs the development treatment of the photoresist film after the exposure treatment. Specifically, the exposure target portion of the photoresist film is selectively irradiated with energy rays by a method such as liquid immersion exposure. Examples of energy rays include argon fluoride (ArF) excimer lasers, krypton fluoride (KrF) excimer lasers, g-lines, i-lines, and the like, in addition to the aforementioned EUV light. As mentioned above, the exposure process of the substrate processing system 1 is not limited to the process performed by EUV light.

工件W亦可為例如在基板之表面形成有含矽抗反射塗層（SiARC）者。在藉由UV光進行微影的情形，有UV光在基板反射而產生之駐波影響到光阻側壁的可能性。因此，有時會形成一般用以防止反射的底層膜。然而，由於EUV光在基板之材料的反射較少，故可省略底層膜。又，形成有其他底層膜，來取代含矽抗反射塗層（SiARC）亦可。同樣地，在光阻膜上形成上層膜亦可。The workpiece W may also be, for example, a silicon-containing anti-reflection coating (SiARC) formed on the surface of the substrate. In the case of lithography by UV light, there is a possibility that the standing wave generated by the reflection of the UV light on the substrate affects the sidewall of the photoresist. Therefore, a primer film generally used to prevent reflection is sometimes formed. However, since the reflection of EUV light on the material of the substrate is less, the underlying film can be omitted. In addition, other underlying films may be formed instead of the silicon-containing anti-reflection coating (SiARC). Similarly, an upper layer film may be formed on the photoresist film.

［基板處理裝置］ 以下，作為基板處理裝置之一例，對塗佈・顯影裝置2之構成進行說明。如圖1～圖3所示，塗佈・顯影裝置2包含：載具區塊4、處理區塊5、介面區塊6、控制裝置100（控制部）。[Substrate processing device] Hereinafter, the configuration of the coating/developing apparatus 2 will be described as an example of the substrate processing apparatus. As shown in FIGS. 1 to 3 , the coating/developing device 2 includes a carrier block 4 , a processing block 5 , an interface block 6 , and a control device 100 (control unit).

載具區塊4進行：工件W往塗佈・顯影裝置2內進去的導入、及工件W從塗佈・顯影裝置2內出來的導出。例如，載具區塊4可將工件W用的複數之載具C加以支持，並內建有傳遞臂A1。載具C收納例如圓形之複數片工件W。傳遞臂A1從載具C取出工件W，而傳遞至處理區塊5，並從處理區塊5承接工件W，而送回至載具C內。The carrier block 4 performs: the introduction of the workpiece W into the coating and developing device 2 , and the unloading of the workpiece W from the coating and developing device 2 . For example, the carrier block 4 can support a plurality of carriers C for the workpiece W, and has a built-in transfer arm A1. The carrier C accommodates a plurality of workpieces W, for example, circular. The transfer arm A1 takes out the workpiece W from the carrier C, transfers it to the processing block 5, receives the workpiece W from the processing block 5, and returns it to the carrier C.

處理區塊5具有複數之處理模組11、12、13、14。處理模組11、12、13、14內建有塗佈單元U1、熱處理單元U2、以及將工件W輸送至此等單元的輸送臂A3。塗佈單元U1將處理液塗佈於工件W之表面。熱處理單元U2內建有例如熱板及冷卻板，以熱板將工件W加熱，並以冷卻板將加熱後之工件W冷卻，而進行熱處理。The processing block 5 has a plurality of processing modules 11 , 12 , 13 and 14 . The processing modules 11 , 12 , 13 , and 14 are built with a coating unit U1 , a heat treatment unit U2 , and a conveying arm A3 that conveys the workpiece W to these units. The coating unit U1 coats the surface of the workpiece W with the treatment liquid. The heat treatment unit U2 includes, for example, a hot plate and a cooling plate. The hot plate is used to heat the workpiece W, and the cooling plate is used to cool the heated workpiece W to perform heat treatment.

處理模組11，藉由塗佈單元U1及熱處理單元U2，在工件W之表面上形成底層膜。處理模組11之塗佈單元U1，在工件W上塗佈用以形成底層膜的處理液。處理模組11之熱處理單元U2，配合底層膜之形成而進行各種熱處理。The processing module 11 forms an underlying film on the surface of the workpiece W by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 11 coats the workpiece W with the processing liquid for forming the underlying film. The heat treatment unit U2 of the treatment module 11 performs various heat treatments in conjunction with the formation of the underlying film.

處理模組12，藉由塗佈單元U1及熱處理單元U2，在底層膜上形成光阻膜。處理模組12之塗佈單元U1，在底層膜上塗佈光阻膜形成用之處理液。又，塗佈單元U1係藉由在其塗佈之處理液上供給水溶性聚合物，以形成界面控制膜。處理模組12之熱處理單元U2，配合光阻膜之形成而進行各種熱處理。作為熱處理之具體例子，可舉例如用以使塗佈膜硬化而作為光阻膜的加熱處理（PAB：Pre　Applied Bake，預烘烤）。The processing module 12 forms a photoresist film on the underlying film by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 12 coats a processing liquid for forming a photoresist film on the underlying film. In addition, the coating unit U1 forms an interface control film by supplying a water-soluble polymer on the treatment liquid to be coated. The heat treatment unit U2 of the treatment module 12 performs various heat treatments according to the formation of the photoresist film. As a specific example of the heat treatment, for example, a heat treatment (PAB: Pre Applied Bake, pre-bake) for curing the coating film as a photoresist film can be mentioned.

處理模組13，藉由塗佈單元U1及熱處理單元U2，在光阻膜上形成上層膜。處理模組13之塗佈單元U1，在光阻膜上塗佈上層膜形成用之液體。處理模組13之熱處理單元U2，配合上層膜之形成而進行各種熱處理。The processing module 13 forms an upper layer film on the photoresist film by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 13 coats the liquid for forming the upper layer film on the photoresist film. The heat treatment unit U2 of the treatment module 13 performs various heat treatments in conjunction with the formation of the upper layer film.

處理模組14，藉由塗佈單元U1及熱處理單元U2，對曝光後之光阻膜進行顯影處理。處理模組14之塗佈單元U1，在曝光後之工件W之表面上塗佈顯影液後，利用沖洗液洗掉該顯影液，藉此進行光阻膜之顯影處理。熱處理單元U2，配合顯影處理而進行各種熱處理。作為熱處理之具體例子，可舉例如顯影處理前之加熱處理（PEB：Post Exposure Bake，曝光後烘烤）、顯影處理後之加熱處理（PB：Post Bake，後烘烤）等。The processing module 14 uses the coating unit U1 and the heat treatment unit U2 to develop the exposed photoresist film. The coating unit U1 of the processing module 14 coats the developing solution on the surface of the exposed workpiece W, and then washes the developing solution with a rinse solution, thereby performing the developing process of the photoresist film. The heat treatment unit U2 performs various heat treatments in conjunction with the development treatment. Specific examples of the heat treatment include heat treatment (PEB: Post Exposure Bake, post-exposure bake) before development treatment, and heat treatment (PB: Post Bake, post-bake) after development treatment.

在處理區塊5內之載具區塊4側，設有棚架單元U10。棚架單元U10分隔成沿上下方向並排的複數之單元。在棚架單元U10之附近設有升降臂A7。升降臂A7使工件W在棚架單元U10的單元彼此之間升降。On the side of the carrier block 4 in the processing block 5, a shelf unit U10 is provided. The shelf unit U10 is divided into a plurality of units arranged in the vertical direction. A lift arm A7 is provided in the vicinity of the scaffold unit U10. The lift arm A7 lifts and lowers the workpiece W between the units of the scaffold unit U10.

在處理區塊5內之介面區塊6側，設有棚架單元U11。棚架單元U11分隔成沿上下方向並排的複數之單元。On the side of the interface block 6 in the processing block 5, a shelf unit U11 is provided. The shelf unit U11 is divided into a plurality of units arranged in the vertical direction.

在棚架單元U11上，進一步設有膜去除單元U13。膜去除單元U13係在由處理模組12進行的有關光阻膜形成的處理之後，進行用以去除光阻膜上之界面控制膜的處理。On the shelf unit U11, a film removing unit U13 is further provided. The film removal unit U13 performs a process for removing the interface control film on the photoresist film after the process related to the formation of the photoresist film by the processing module 12 .

介面區塊6係與曝光裝置3之間進行工件W的傳遞。例如，介面區塊6內建有傳遞臂A8，並連接於曝光裝置3。傳遞臂A8將配置於棚架單元U11的工件W傳遞至曝光裝置3，並從曝光裝置3承接工件W，而送回至棚架單元U11。The interface block 6 transfers the workpiece W to the exposure device 3 . For example, the interface block 6 has a built-in transmission arm A8 and is connected to the exposure device 3 . The transfer arm A8 transfers the workpiece W arranged in the rack unit U11 to the exposure device 3, receives the workpiece W from the exposure device 3, and returns it to the rack unit U11.

控制裝置100控制塗佈・顯影裝置2，俾以例如以下順序執行塗佈・顯影處理。首先，控制裝置100控制傳遞臂A1，俾將載具C內之工件W輸送至棚架單元U10，並控制升降臂A7，俾將此工件W配置於處理模組11用之單元。The control device 100 controls the coating/developing device 2 to execute coating/developing processes in the following order, for example. First, the control device 100 controls the transfer arm A1 to transfer the workpiece W in the carrier C to the scaffolding unit U10, and controls the lift arm A7 to arrange the workpiece W in the unit for the processing module 11.

接著，控制裝置100控制輸送臂A3，俾將棚架單元U10之工件W輸送至處理模組11內之塗佈單元U1及熱處理單元U2。又，控制裝置100控制塗佈單元U1及熱處理單元U2，俾在此工件W之表面上形成底層膜。其後，控制裝置100控制輸送臂A3，俾將形成有底層膜之工件W送回至棚架單元U10，並控制升降臂A7，俾將此工件W配置於處理模組12用之單元。Next, the control device 100 controls the conveying arm A3 to convey the workpiece W of the scaffolding unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11 . In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 so as to form an underlying film on the surface of the workpiece W. Thereafter, the control device 100 controls the conveying arm A3 to return the work W on which the base film is formed to the scaffolding unit U10, and controls the lifting arm A7 to arrange the work W in the unit for the processing module 12.

接著，控制裝置100控制輸送臂A3，俾將棚架單元U10之工件W輸送至處理模組12內之塗佈單元U1及熱處理單元U2。又，控制裝置100控制塗佈單元U1及熱處理單元U2，俾對此工件W之表面形成光阻膜。此時，於工件W之表面，在光阻膜上形成界面控制膜。其後，控制裝置100控制輸送臂A3，俾將工件W送回至棚架單元U10，並控制升降臂A7，俾將此工件W配置於處理模組13用之單元。Next, the control device 100 controls the conveying arm A3 to convey the workpiece W of the scaffolding unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 12 . In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form a photoresist film on the surface of the workpiece W. At this time, on the surface of the workpiece W, an interface control film is formed on the photoresist film. Thereafter, the control device 100 controls the conveying arm A3 to return the workpiece W to the scaffolding unit U10, and controls the lifting arm A7 to arrange the workpiece W in the unit for the processing module 13.

接著，控制裝置100控制輸送臂A3，俾將棚架單元U10之工件W輸送至膜去除單元U13。又，控制裝置100控制膜去除單元U13，俾去除此工件W之表面的界面控制膜。其後，控制裝置100控制輸送臂A3，俾將工件W送回至棚架單元U10，並控制升降臂A7，俾將此工件W配置於處理模組13用之單元。Next, the control device 100 controls the conveying arm A3 so as to convey the workpiece W of the scaffolding unit U10 to the film removing unit U13. In addition, the control device 100 controls the film removing unit U13 to remove the interface control film on the surface of the workpiece W. Thereafter, the control device 100 controls the conveying arm A3 to return the workpiece W to the scaffolding unit U10, and controls the lifting arm A7 to arrange the workpiece W in the unit for the processing module 13.

接著，控制裝置100控制輸送臂A3，俾將棚架單元U10之工件W輸送至處理模組13內之各單元。又，控制裝置100控制塗佈單元U1及熱處理單元U2，俾在此工件W之光阻膜上形成上層膜。其後，控制裝置100控制輸送臂A3，俾將工件W輸送至棚架單元U11。Next, the control device 100 controls the conveying arm A3 to convey the workpiece W of the scaffolding unit U10 to each unit in the processing module 13 . In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form an upper layer film on the photoresist film of the workpiece W. Thereafter, the control device 100 controls the conveying arm A3 to convey the workpiece W to the scaffold unit U11.

接著，控制裝置100控制傳遞臂A8，俾將棚架單元U11之工件W送出至曝光裝置3。其後，控制裝置100控制傳遞臂A8，俾從曝光裝置3承接已施予曝光處理之工件W，而將其配置於棚架單元U11中之處理模組14用之單元。Next, the control device 100 controls the transfer arm A8 to send the workpiece W of the shelf unit U11 to the exposure device 3 . After that, the control device 100 controls the transfer arm A8 so as to receive the workpiece W that has been subjected to the exposure process from the exposure device 3, and arrange it in the unit for the processing module 14 in the rack unit U11.

接著，控制裝置100控制輸送臂A3，俾將棚架單元U11之工件W輸送至處理模組14內之各單元，並控制塗佈單元U1及熱處理單元U2，俾對此工件W之光阻膜施予顯影處理。其後，控制裝置100控制輸送臂A3，俾將工件W送回至棚架單元U10，並控制升降臂A7及傳遞臂A1，俾將此工件W送回至載具C內。經過以上程序，塗佈・顯影處理便完成。Next, the control device 100 controls the conveying arm A3 to convey the workpiece W of the scaffolding unit U11 to each unit in the processing module 14, and controls the coating unit U1 and the heat treatment unit U2, so that the photoresist film of the workpiece W is A developing treatment is applied. Thereafter, the control device 100 controls the conveying arm A3 to return the workpiece W to the scaffold unit U10, and controls the lifting arm A7 and the transfer arm A1 to return the workpiece W to the carrier C. After the above procedure, the coating and developing process is completed.

又，基板處理裝置的具體構成，不限於以上例示之塗佈・顯影裝置2的構成。基板處理裝置只要具備塗佈單元U1、熱處理單元U2、膜去除單元U13、以及可控制此等單元的控制裝置100，為何種裝置皆可。Note that the specific configuration of the substrate processing apparatus is not limited to the configuration of the coating and developing apparatus 2 exemplified above. The substrate processing apparatus may be any apparatus as long as it includes the coating unit U1 , the heat treatment unit U2 , the film removal unit U13 , and the control device 100 capable of controlling these units.

又，依工件W的狀況，有時不設置上述底層膜及上層膜。在此情形，處理模組11及處理模組13中之各處理可省略。例如，依光阻的種類，有時省略底層膜及上層膜之形成。在以下的實施態樣中，針對不形成底層膜及上層膜的情形進行說明。In addition, depending on the condition of the workpiece W, the above-mentioned base film and upper film may not be provided. In this case, each processing in the processing module 11 and the processing module 13 can be omitted. For example, depending on the type of photoresist, the formation of the underlying film and the upper film may be omitted. In the following embodiment, the case where the underlayer film and the upper layer film are not formed will be described.

（塗佈單元） 參照圖4，針對塗佈單元U1進行說明。圖4所示之塗佈單元U1，為特別可適用於有關光阻膜之處理模組12的塗佈單元U1。塗佈單元U1如圖4所示，具備旋轉固持部20、液體供給部30（光阻液供給部）、液體供給部40（聚合物供給部）。(coating unit) Referring to FIG. 4 , the coating unit U1 will be described. The coating unit U1 shown in FIG. 4 is a coating unit U1 which is particularly suitable for the processing module 12 related to the photoresist film. As shown in FIG. 4 , the coating unit U1 includes a rotary holding part 20 , a liquid supply part 30 (a photoresist liquid supply part), and a liquid supply part 40 (a polymer supply part).

旋轉固持部20具有旋轉部21及固持部22。旋轉部21具有往上方突出的軸23。旋轉部21以例如電動馬達等為動力來源，而使軸23旋轉。固持部22設在軸23之前端部。固持部22上供人們配置工件W。固持部22為例如藉由吸附等將工件W固持成大致水平的吸附夾頭。固持部22（吸附夾頭）之形狀並未特別限定，可為例如圓形。固持部22之尺寸小於工件W亦可。在固持部22呈圓形的情形，固持部22之尺寸為例如直徑80mm左右亦可。The rotating holding part 20 has a rotating part 21 and a holding part 22 . The rotating part 21 has a shaft 23 protruding upward. The rotating part 21 uses, for example, an electric motor as a power source, and rotates the shaft 23 . The holding portion 22 is provided at the front end portion of the shaft 23 . The workpiece W is placed on the holding portion 22 by a person. The holding portion 22 is a suction chuck that holds the workpiece W substantially horizontally by suction or the like, for example. The shape of the holding portion 22 (suction chuck) is not particularly limited, and may be, for example, circular. The size of the holding portion 22 may be smaller than the workpiece W. When the holding portion 22 is circular, the size of the holding portion 22 may be, for example, about 80 mm in diameter.

旋轉固持部20在工件W呈大致水平的狀態下，使工件W繞著垂直於工件W之表面Wa的軸（旋轉軸）旋轉。在本實施態樣中，旋轉軸由於通過呈圓形的工件W之中心，因此亦為中心軸。在本實施態樣中，如圖4所示，旋轉固持部20係從上方觀察使工件W順時鐘旋轉。The rotation holding portion 20 rotates the workpiece W around an axis (rotation axis) perpendicular to the surface Wa of the workpiece W in a state where the workpiece W is substantially horizontal. In this embodiment, since the rotation axis passes through the center of the circular workpiece W, it is also the central axis. In this embodiment, as shown in FIG. 4 , the rotation holding portion 20 rotates the workpiece W clockwise when viewed from above.

液體供給部30構成為，對工件W之表面Wa供給處理液L1。在處理模組12中，處理液L1係由用以形成光阻膜之光阻材料構成的塗佈液。在此情形，液體供給部30發揮作為光阻液供給部之功能。在處理模組11、13、14中，處理液L1可為底層膜之形成材料、上層膜之形成材料、或顯影液。The liquid supply unit 30 is configured to supply the processing liquid L1 to the surface Wa of the workpiece W. As shown in FIG. In the processing module 12, the processing liquid L1 is a coating liquid composed of a photoresist material for forming a photoresist film. In this case, the liquid supply part 30 functions as a resist liquid supply part. In the processing modules 11 , 13 , and 14 , the processing liquid L1 may be a material for forming a bottom layer film, a material for forming an upper layer film, or a developer.

在處理模組12中，使用作處理液L1之光阻材料，如上述可使用對EUV光具有感光性的EUV微影用光阻，但不限於此。又，作為光阻材料，可選擇負型、正型任一種，甚至亦可選擇金屬系光阻。如前述，使用於處理液L1之光阻材料的種類並未特別限定。In the processing module 12 , the photoresist material used as the processing liquid L1 can be used as the photoresist for EUV lithography which is sensitive to EUV light as described above, but is not limited to this. In addition, as the photoresist material, either negative type or positive type can be selected, and even a metal-based photoresist can be selected. As described above, the type of the photoresist used for the processing liquid L1 is not particularly limited.

液體供給部30具有液體源31、泵浦32、閥33、噴嘴34、配管35。液體源31發揮作為處理液L1之供給源的功能。泵浦32從液體源31抽吸處理液L1，而經由配管35及閥33送出至噴嘴34。噴嘴34以噴吐口朝向工件W之表面Wa的方式，配置於工件W之上方。噴嘴34藉由未圖示之驅動部，可沿著水平方向及上下方向移動。噴嘴34可將從泵浦32送出來之處理液L1，噴吐至工件W之表面Wa。配管35從上游側開始，依序連接了液體源31、泵浦32、閥33及噴嘴34。The liquid supply unit 30 includes a liquid source 31 , a pump 32 , a valve 33 , a nozzle 34 , and a pipe 35 . The liquid source 31 functions as a supply source of the processing liquid L1. The pump 32 sucks the processing liquid L1 from the liquid source 31 and sends it to the nozzle 34 via the piping 35 and the valve 33 . The nozzle 34 is arrange|positioned above the workpiece|work W so that a discharge port may face the surface Wa of the workpiece|work W. As shown in FIG. The nozzle 34 can be moved in the horizontal direction and the up-down direction by the drive part which is not shown in figure. The nozzle 34 can spray the processing liquid L1 sent from the pump 32 to the surface Wa of the workpiece W. As shown in FIG. The piping 35 is connected to the liquid source 31 , the pump 32 , the valve 33 , and the nozzle 34 in this order from the upstream side.

液體供給部40將處理液L2供給至工件W之表面Wa。於處理模組12中，處理液L2係用以在光阻膜上形成界面控制膜的水溶性聚合物。在此情形，液體供給部40發揮作為聚合物供給部之功能。在處理模組11、13中，處理液L2設定為用以從工件W去除底層膜或上層膜的各種有機溶劑亦可。又，在處理模組14中，處理液L2設定為沖洗液亦可。又，依處理模組的狀況，不具有液體供給部40亦可。The liquid supply part 40 supplies the processing liquid L2 to the surface Wa of the workpiece|work W. As shown in FIG. In the processing module 12, the processing liquid L2 is a water-soluble polymer used to form an interface control film on the photoresist film. In this case, the liquid supply part 40 functions as a polymer supply part. In the processing modules 11 and 13, the processing liquid L2 may be set to various organic solvents for removing the underlying film or the upper film from the workpiece W. In addition, in the processing module 14, the processing liquid L2 may be set as a rinse liquid. In addition, depending on the situation of the processing module, the liquid supply part 40 may not be provided.

作為在處理模組12中使用之用以形成界面控制膜的水溶性聚合物，可選擇各種材料。例如，可選擇聚乙烯醇、聚乙烯基吡咯烷酮、甲基纖維素、甲基乙烯基醚、聚丙烯醯胺、聚氧化乙烯、聚丙烯酸鈉、水溶性尼龍等。在處理模組12中，準備將此等水溶性聚合物溶解於水性溶劑中而得之狀態的處理液L2，並將其供給至塗佈有光阻膜用之處理液L1的工件W之表面Wa。As the water-soluble polymer used in the process module 12 to form the interface control film, various materials can be selected. For example, polyvinyl alcohol, polyvinyl pyrrolidone, methyl cellulose, methyl vinyl ether, polyacrylamide, polyethylene oxide, sodium polyacrylate, water-soluble nylon and the like can be selected. In the processing module 12, a processing liquid L2 in a state obtained by dissolving these water-soluble polymers in an aqueous solvent is prepared and supplied to the surface of the workpiece W on which the processing liquid L1 for photoresist film is applied Wa.

用以形成界面控制膜的水溶性聚合物之種類，可依形成於其下層的光阻膜之種類來選擇。亦即，可依作為光阻膜之材料的處理液L1之種類，來選擇水溶性聚合物。The type of the water-soluble polymer used to form the interface control film can be selected according to the type of the photoresist film formed on the lower layer. That is, the water-soluble polymer can be selected according to the type of the treatment liquid L1 as the material of the photoresist film.

液體供給部40具有液體源41、泵浦42、閥43、噴嘴44、配管45。液體源41發揮作為處理液L2之供給源的功能。泵浦42從液體源41抽吸處理液L2，而經由配管45及閥43送出至噴嘴44。噴嘴44以噴吐口朝向工件W之表面Wa的方式，配置於工件W之上方。噴嘴44藉由未圖示之驅動部，可沿著水平方向及上下方向移動。噴嘴44可將從泵浦42送出來之處理液L2，噴吐至工件W之表面Wa。配管45從上游側開始，依序連接了液體源41、泵浦42、閥43及噴嘴44。The liquid supply unit 40 includes a liquid source 41 , a pump 42 , a valve 43 , a nozzle 44 , and a pipe 45 . The liquid source 41 functions as a supply source of the processing liquid L2. The pump 42 sucks the processing liquid L2 from the liquid source 41 and sends it to the nozzle 44 via the piping 45 and the valve 43 . The nozzle 44 is arrange|positioned above the workpiece|work W so that a discharge port may face the surface Wa of the workpiece|work W. The nozzle 44 can be moved in the horizontal direction and the up-down direction by the drive part which is not shown in figure. The nozzle 44 can spray the processing liquid L2 sent from the pump 42 to the surface Wa of the workpiece W. The piping 45 is connected to the liquid source 41 , the pump 42 , the valve 43 , and the nozzle 44 in this order from the upstream side.

在處理模組12之塗佈單元U1中，藉由對工件W施予塗佈處理，以在工件W之表面Wa形成光阻膜R1（由光阻液形成之塗佈膜），進一步在其頂面形成界面控制膜R2。In the coating unit U1 of the processing module 12, by applying coating treatment to the workpiece W, a photoresist film R1 (a coating film formed from a photoresist liquid) is formed on the surface Wa of the workpiece W, and further on the surface Wa of the workpiece W. An interface control film R2 is formed on the top surface.

（熱處理單元） 接著參照圖5，針對熱處理單元U2進行詳細的說明。如圖5所示，熱處理單元U2具備處理室50、溶劑供給部70、氣體供給部73、排氣部76。(heat treatment unit) Next, referring to FIG. 5 , the heat treatment unit U2 will be described in detail. As shown in FIG. 5 , the heat treatment unit U2 includes a processing chamber 50 , a solvent supply unit 70 , a gas supply unit 73 , and an exhaust unit 76 .

處理室50收納作為熱處理對象之工件W。在處理室50內，對工件W進行熱處理。處理室50具有殼體51、溫度調整機構55、加熱機構60。又，圖5顯示熱處理單元U2之一部分的構成，並未顯示熱處理單元U2之全部構成。The processing chamber 50 accommodates the workpiece W to be a heat treatment object. In the processing chamber 50, the workpiece W is heat-treated. The processing chamber 50 has a casing 51 , a temperature adjustment mechanism 55 , and a heating mechanism 60 . 5 shows the configuration of a part of the heat treatment unit U2, but does not show the entire configuration of the heat treatment unit U2.

殼體51係收納溫度調整機構55及加熱機構60的處理容器。殼體51的側壁上，供用於搬入工件W之搬入口52形成開口。The casing 51 is a processing container in which the temperature adjustment mechanism 55 and the heating mechanism 60 are accommodated. In the side wall of the casing 51 , an opening 52 for carrying the workpiece W is formed.

溫度調整機構55係在處理室50內將工件W之溫度調整成預定溫度的機構。工件W在溫度調整機構55之溫度調整，部分性地包含於熱處理單元U2中之熱處理亦可。溫度調整機構55係與外部的輸送臂A3之間進行工件W的傳遞。溫度調整機構55具有溫度調整板55a、連結托架55b、驅動機構55c。The temperature adjustment mechanism 55 is a mechanism for adjusting the temperature of the workpiece W in the processing chamber 50 to a predetermined temperature. The temperature adjustment of the workpiece W by the temperature adjustment mechanism 55 may be partially included in the heat treatment in the heat treatment unit U2. The temperature adjustment mechanism 55 transfers the workpiece W to the external transfer arm A3. The temperature adjustment mechanism 55 includes a temperature adjustment plate 55a, a connection bracket 55b, and a drive mechanism 55c.

溫度調整板55a係對載置之工件W進行溫度調整的板片。具體而言，溫度調整板55a為冷卻板，用於載置以加熱機構60加熱後之工件W，並將該工件W冷卻至預定溫度。例如，溫度調整板55a形成大致圓盤狀亦可。溫度調整板55a係由導熱性高之鋁、銀或銅等金屬構成亦可，從防止遇熱變形的觀點來說，由一種材料構成亦可。在溫度調整板55a之內部，形成用以使冷卻水或冷卻氣體流通的冷卻流路（未圖示）亦可。The temperature adjustment plate 55a is a plate that adjusts the temperature of the workpiece W placed thereon. Specifically, the temperature adjustment plate 55a is a cooling plate for placing the workpiece W heated by the heating mechanism 60 and cooling the workpiece W to a predetermined temperature. For example, the temperature adjustment plate 55a may be formed in a substantially disk shape. The temperature adjustment plate 55a may be formed of a metal having high thermal conductivity, such as aluminum, silver, or copper, and may be formed of a single material from the viewpoint of preventing deformation due to heat. A cooling flow path (not shown) for circulating cooling water or cooling gas may be formed inside the temperature adjustment plate 55a.

連結托架55b連結於溫度調整板55a。驅動機構55c依據控制裝置100的指示來進行動作，而使連結托架55b移動。連結托架55b係藉由驅動機構55c，而在殼體51內移動。具體而言，連結托架55b沿著在殼體51的搬入口52與加熱機構60附近兩者之間延伸的引導軌（未圖示）而移動。藉由令連結托架55b沿著引導軌而移動，以使溫度調整板55a在搬入口52與加熱機構60之間移動。又，連結托架55b由例如熱傳導率高之鋁、銀或銅等金屬構成亦可。The connection bracket 55b is connected to the temperature adjustment plate 55a. The drive mechanism 55c operates according to the instruction of the control device 100 to move the connecting bracket 55b. The connecting bracket 55b is moved in the casing 51 by the drive mechanism 55c. Specifically, the connection bracket 55b moves along a guide rail (not shown) extending between the inlet 52 of the casing 51 and the vicinity of the heating mechanism 60 . By moving the connection bracket 55b along the guide rail, the temperature adjustment plate 55a is moved between the inlet 52 and the heating mechanism 60 . In addition, the connection bracket 55b may be made of a metal having high thermal conductivity, such as aluminum, silver, or copper, for example.

加熱機構60係在處理室50內對工件W進行加熱處理的機構。在加熱機構60進行之對工件W的加熱處理，包含於熱處理單元U2中之熱處理的一部分。加熱機構60具有支持台61、熱板62、加熱器63、腔室64（蓋體）、升降機構65、支持銷66、及升降機構67。The heating mechanism 60 is a mechanism for heating the workpiece W in the processing chamber 50 . The heat treatment of the workpiece W performed by the heating mechanism 60 is included in a part of the heat treatment in the heat treatment unit U2. The heating mechanism 60 includes a support table 61 , a hot plate 62 , a heater 63 , a chamber 64 (lid body), a lift mechanism 65 , a support pin 66 , and a lift mechanism 67 .

支持台61呈中央部分形成凹陷的圓筒形狀。支持台61將熱板62加以支持。熱板62形成例如大致圓盤狀，被收納於支持台61之凹陷。熱板62具有載置面62a。藉由在載置面62a載置處理對象之工件W，而由熱板62將工件W加以支持。熱板62對所載置之工件W進行加熱。在熱板62之與載置面62a相反側之底面，設有用以對熱板62加熱的加熱器63。例如，加熱器63由電阻發熱體構成。藉由使電流往加熱器63流動，以使加熱器63發熱。然後，來自加熱器63之熱傳播開來，而使熱板62之溫度上升。對於加熱器63，使得依來自控制裝置100之指示的值之電流流入其中亦可，對其施加依來自控制裝置100之指示的值之電壓，而使得依該電壓值之電流流入其中亦可。又，加熱器63嵌入於熱板62內亦可。另外，熱板62可由例如熱傳導率高之鋁、銀或銅等金屬構成，但只要來自加熱器63的熱得以傳導開來而對工件W加熱，由何種形狀及材料構成皆可。The support stand 61 has a cylindrical shape in which the center portion is recessed. The support table 61 supports the hot plate 62 . The hot plate 62 is formed, for example, in a substantially disc shape, and is accommodated in the recess of the support base 61 . The hot plate 62 has a placement surface 62a. By placing the workpiece W to be processed on the placing surface 62 a, the workpiece W is supported by the hot plate 62 . The hot plate 62 heats the placed workpiece W. A heater 63 for heating the hot plate 62 is provided on the bottom surface of the hot plate 62 on the opposite side to the placement surface 62a. For example, the heater 63 is constituted by a resistance heating element. The heater 63 generates heat by flowing an electric current to the heater 63 . Then, the heat from the heater 63 spreads, and the temperature of the hot plate 62 rises. The heater 63 may flow a current according to a value instructed from the control device 100 , or apply a voltage according to a value instructed from the control device 100 to flow a current according to the voltage value. In addition, the heater 63 may be embedded in the hot plate 62 . In addition, the hot plate 62 may be made of metal such as aluminum, silver, or copper with high thermal conductivity, and may be made of any shape and material as long as the heat from the heater 63 is conducted to heat the workpiece W.

腔室64以包圍熱板62中的工件W之載置面62a的方式構成。腔室64具有頂蓋部64a及腳部64b。頂蓋部64a構成具有和支持台61約略相同之直徑的圓板狀。頂蓋部64a以和熱板62之載置面62a在上下方向上對向的方式配置。腳部64b以從頂蓋部64a之外緣往下方延伸的方式構成。升降機構65為依控制裝置100之指示而使腔室64升降的機構。利用升降機構65使腔室64上升，藉此成為工件W之加熱處理空間開啟的狀態，使腔室64下降，藉此成為工件W之加熱處理空間關閉的狀態。The chamber 64 is configured to surround the placement surface 62 a of the workpiece W in the hot plate 62 . The chamber 64 has a top cover part 64a and a leg part 64b. The top cover portion 64a is formed into a disk shape having a diameter approximately the same as that of the support base 61 . The top cover part 64a is arrange|positioned so that it may oppose the mounting surface 62a of the hot plate 62 in an up-down direction. The leg part 64b is comprised so that it may extend downward from the outer edge of the top cover part 64a. The lifting mechanism 65 is a mechanism for lifting and lowering the chamber 64 according to the instruction of the control device 100 . The chamber 64 is raised by the elevating mechanism 65, whereby the heating processing space of the workpiece W is opened, and the chamber 64 is lowered, whereby the heating processing space of the workpiece W is closed.

支持銷66為接腳，以貫通支持台61及熱板62之方式沿上下方向延伸，並將工件W從下方支持。支持銷66藉由沿上下方向升降，以將工件W配置在預定之位置。支持銷66係與輸送工件W的溫度調整板55a之間，進行工件W的傳遞。支持銷66由例如沿著周向等間隔配置的三支接腳構成亦可。升降機構67係依控制裝置100之指示而使支持銷66升降的機構。升降機構67以可使工件W（詳言之為支持工件W之支持銷66）升降的方式構成，俾使工件W靠近熱板62，並在熱板62載置工件W。The support pins 66 are pins, and extend in the vertical direction so as to penetrate the support table 61 and the hot plate 62 , and support the workpiece W from below. The support pin 66 moves up and down in the vertical direction to arrange the workpiece W at a predetermined position. The workpiece W is transferred between the support pins 66 and the temperature adjustment plate 55a that conveys the workpiece W. The support pins 66 may be constituted by, for example, three pins arranged at equal intervals in the circumferential direction. The lifting mechanism 67 is a mechanism for lifting and lowering the support pin 66 according to the instruction of the control device 100 . The elevating mechanism 67 is configured to elevate the workpiece W (specifically, the support pins 66 supporting the workpiece W), so that the workpiece W is brought close to the hot plate 62 and the workpiece W is placed on the hot plate 62 .

溶劑供給部70對進行工件W之加熱處理的空間，供給來自有機溶劑的溶劑蒸氣。溶劑供給部70具有溶劑供給源71及蒸氣供給管72。又，在蒸氣供給管72上設有作為開閉閥的閥V1。藉由閥V1的開閉動作，將來自溶劑供給源71之溶劑蒸氣供給至腔室64內，並調整其供給量。The solvent supply part 70 supplies solvent vapor from an organic solvent to the space in which the workpiece W is heated. The solvent supply unit 70 has a solvent supply source 71 and a vapor supply pipe 72 . In addition, the steam supply pipe 72 is provided with a valve V1 as an on-off valve. By opening and closing the valve V1, the solvent vapor from the solvent supply source 71 is supplied into the chamber 64, and the supply amount thereof is adjusted.

又，作為溶劑，可使用具有溶解光阻圖案之性質的有機溶劑。舉例來說，可為丙二醇單甲醚醋酸酯（PGMEA）、丙二醇單甲基醚（PGME）、環己酮、γ-丁內酯等。Moreover, as a solvent, the organic solvent which has the property of dissolving a photoresist pattern can be used. For example, it can be propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, γ-butyrolactone, and the like.

氣體供給部73對進行工件W之加熱處理的空間，供給稀有氣體或二氧化碳等。氣體供給部73具有氣體供給源74及氣體供給管75。又，在氣體供給管75上設有作為開閉閥的閥V2。藉由閥V2的開閉動作，將來自氣體供給源74之氣體供給至腔室64內，並調整其供給量。The gas supply unit 73 supplies a rare gas, carbon dioxide, or the like to the space in which the workpiece W is heated. The gas supply unit 73 has a gas supply source 74 and a gas supply pipe 75 . In addition, the gas supply pipe 75 is provided with a valve V2 as an on-off valve. By opening and closing the valve V2, the gas from the gas supply source 74 is supplied into the chamber 64, and the supply amount thereof is adjusted.

又，作為氣體供給部73供給的氣體，可舉例如氮（N2 ）、氬（Ar）、二氧化碳等。圖5顯示供給例如N2 的構成，但為了供給此等氣體，而設有複數之氣體供給部73亦可。又，能藉由閥V2，而針對各氣體供給部73個別地控制供給量等亦可。In addition, as the gas supplied from the gas supply unit 73 includes, for example nitrogen (N 2), argon (Ar), carbon dioxide, and the like. FIG. 5 shows a configuration for supplying, for example, N 2 , but in order to supply these gases, a plurality of gas supply units 73 may be provided. In addition, the supply amount and the like may be individually controlled for each gas supply unit 73 by the valve V2.

在加熱機構60，設有測定熱板之溫度的機構、及測定腔室64內之溫度的機構等亦可。此等機構依來自控制裝置100之指示，而對測定對象之溫度進行測定亦可。又，此等機構將測定結果分別輸出至控制裝置100。此等機構可分別為熱敏電阻器。控制裝置100依據來自此等機構的資訊，而控制加熱溫度等亦可。The heating mechanism 60 may be provided with a mechanism for measuring the temperature of the hot plate, a mechanism for measuring the temperature in the chamber 64, and the like. These means may measure the temperature of the object to be measured in accordance with an instruction from the control device 100 . Moreover, these means output the measurement result to the control apparatus 100, respectively. These mechanisms may be thermistors, respectively. The control device 100 may control the heating temperature and the like according to the information from these institutions.

排氣部76從處理室50排出氣體。例如，排氣部76從處理室50往熱處理單元U2（塗佈・顯影裝置2）之外部排出氣體。排氣部76包含排氣導管77及開閉部78。排氣導管77將處理室50內之空間（由殼體51區隔出來的空間）與排出目的地加以連接。開閉部78設在排氣導管77之流路上。開閉部78依控制裝置100之指示，而將排氣導管77之流路切換為開啟狀態或關閉狀態。開閉部78例如為電磁閥。藉由將開閉部78設定為開啟狀態，以將排氣導管77之流路從關閉狀態切換為開啟狀態。藉由將開閉部78設定為關閉狀態，以將排氣導管77之流路從開啟狀態切換為關閉狀態。The exhaust unit 76 exhausts gas from the processing chamber 50 . For example, the exhaust part 76 exhausts gas from the processing chamber 50 to the outside of the thermal processing unit U2 (coating and developing device 2 ). The exhaust part 76 includes an exhaust duct 77 and an opening and closing part 78 . The exhaust duct 77 connects the space within the processing chamber 50 (the space partitioned by the casing 51 ) to the exhaust destination. The opening and closing portion 78 is provided on the flow path of the exhaust duct 77 . The opening and closing portion 78 switches the flow path of the exhaust duct 77 to an open state or a closed state according to the instruction of the control device 100 . The opening and closing portion 78 is, for example, a solenoid valve. By setting the opening and closing portion 78 to the open state, the flow path of the exhaust duct 77 is switched from the closed state to the open state. By setting the opening and closing portion 78 to the closed state, the flow path of the exhaust duct 77 is switched from the open state to the closed state.

又，除了排氣部76，另外設有排氣部79亦可。該排氣部79從由支持台61及腔室64區隔出來的空間（以下稱腔室64內的空間）排出氣體。在設有排氣部79的情形，例如藉由與排氣部76同樣地動作，將可從腔室64內往熱處理單元U2（塗佈・顯影裝置2）之外部排出氣體。Moreover, in addition to the exhaust part 76, the exhaust part 79 may be provided separately. The exhaust part 79 exhausts gas from the space partitioned by the support table 61 and the chamber 64 (hereinafter referred to as the space in the chamber 64 ). When the exhaust part 79 is provided, the gas can be exhausted from the inside of the chamber 64 to the outside of the heat treatment unit U2 (coating and developing device 2 ) by, for example, the same operation as the exhaust part 76 .

（膜去除單元） 接著參照圖6，針對膜去除單元U13進行說明。圖6所示之膜去除單元U13，從形成光阻膜而進行加熱處理後之工件W去除界面控制膜。膜去除單元U13如圖6所示，包含旋轉固持部20、液體供給部80（去除液供給部）。(Membrane removal unit) Next, referring to FIG. 6 , the film removal unit U13 will be described. The film removal unit U13 shown in FIG. 6 removes the interface control film from the workpiece W after the photoresist film is formed and heat-treated. As shown in FIG. 6 , the membrane removal unit U13 includes a rotation holding part 20 and a liquid supply part 80 (removal liquid supply part).

旋轉固持部20具有和塗佈單元U1（參照圖4）之旋轉固持部20同樣的構成。亦即，膜去除單元U13之旋轉固持部20也具有旋轉部21及固持部22。旋轉部21具有往上方突出的軸23。固持部22設在軸23之前端部，固持部22上供人們配置工件W。The rotation holding part 20 has the same structure as the rotation holding part 20 of the coating unit U1 (refer FIG. 4). That is, the rotating holding part 20 of the film removal unit U13 also has the rotating part 21 and the holding part 22 . The rotating part 21 has a shaft 23 protruding upward. The holding portion 22 is provided at the front end portion of the shaft 23 , and the workpiece W is arranged on the holding portion 22 by a person.

旋轉固持部20在工件W呈大致水平的狀態下，使工件W繞著垂直於工件W之表面Wa的軸（旋轉軸）旋轉。在本實施態樣中，旋轉軸由於通過呈圓形的工件W之中心，因此亦為中心軸。在本實施態樣中，如圖6所示，旋轉固持部20係從上方觀察使工件W順時鐘旋轉。The rotation holding portion 20 rotates the workpiece W around an axis (rotation axis) perpendicular to the surface Wa of the workpiece W in a state where the workpiece W is substantially horizontal. In this embodiment, since the rotation axis passes through the center of the circular workpiece W, it is also the central axis. In this embodiment, as shown in FIG. 6 , the rotation holding part 20 rotates the workpiece W clockwise when viewed from above.

液體供給部80對工件W之表面Wa供給處理液L3。處理液L3係用以去除界面控制膜的處理液。例如，可使用純水作為處理液L3。The liquid supply part 80 supplies the processing liquid L3 to the surface Wa of the workpiece|work W. As shown in FIG. The treatment liquid L3 is a treatment liquid for removing the interface control film. For example, pure water can be used as the treatment liquid L3.

液體供給部80具有液體源81、泵浦82、閥83、噴嘴84、配管85。液體源81發揮作為處理液L3之供給源的功能。泵浦82從液體源81抽吸處理液L3，而經由配管85及閥83送出至噴嘴84。噴嘴84以噴吐口朝向工件W之表面Wa的方式，配置於工件W之上方。噴嘴84藉由未圖示之驅動部，可沿著水平方向及上下方向移動。噴嘴84可將從泵浦82送出來之處理液L3，噴吐至工件W之表面Wa。配管85從上游側開始，依序連接了液體源81、泵浦82、閥83及噴嘴84。The liquid supply unit 80 includes a liquid source 81 , a pump 82 , a valve 83 , a nozzle 84 , and a pipe 85 . The liquid source 81 functions as a supply source of the processing liquid L3. The pump 82 sucks the processing liquid L3 from the liquid source 81 and sends it out to the nozzle 84 via the piping 85 and the valve 83 . The nozzle 84 is arrange|positioned above the workpiece|work W so that a discharge port may face the surface Wa of the workpiece|work W. As shown in FIG. The nozzle 84 can be moved in the horizontal direction and the up-down direction by the drive part which is not shown in figure. The nozzle 84 can spray the processing liquid L3 sent from the pump 82 to the surface Wa of the workpiece W. The piping 85 is connected to the liquid source 81 , the pump 82 , the valve 83 , and the nozzle 84 in this order from the upstream side.

在膜去除單元U13中，藉由對工件W施予處理，以去除形成在工件W之表面Wa的界面控制膜，而形成光阻膜R1露出於表面的狀態。In the film removal unit U13, the workpiece W is treated to remove the interface control film formed on the surface Wa of the workpiece W, and the photoresist film R1 is exposed to the surface.

（控制裝置） 控制裝置100，如圖7所示，就功能模組而言，有讀取部M1、記錄部M2、處理部M3、指示部M4。此等功能模組，只不過是為方便起見將控制裝置100之功能區分成複數之模組而得者，並非必然意味著構成控制裝置100之硬體分成此等模組。各功能模組不限於藉由程式之執行來實現，藉由專用的電路（例如邏輯電路）來實現亦可。又，各功能模組係藉由整合此電路得到的積體電路（ASIC： Application Specific Integrated Circuit，特定應用積體電路）來實現亦可。(control device) As shown in FIG. 7 , the control device 100 includes a reading unit M1 , a recording unit M2 , a processing unit M3 , and an instruction unit M4 in terms of functional modules. These functional modules are merely obtained by dividing the functions of the control device 100 into plural modules for convenience, and do not necessarily mean that the hardware constituting the control device 100 is divided into these modules. Each functional module is not limited to be realized by the execution of the program, but can also be realized by a dedicated circuit (such as a logic circuit). In addition, each functional module may be realized by an integrated circuit (ASIC: Application Specific Integrated Circuit) obtained by integrating the circuit.

讀取部M1從電腦可讀取之記錄媒體RM讀取程式。記錄媒體RM儲存用以使基板處理系統1之各部分動作的程式。作為記錄媒體RM，例如可為半導體記憶體、記錄光碟、記錄磁碟、記錄磁光碟。The reading unit M1 reads the program from the computer-readable recording medium RM. The recording medium RM stores a program for operating each part of the substrate processing system 1 . As the recording medium RM, for example, a semiconductor memory, a recording optical disc, a recording magnetic disc, or a recording magneto-optical disc can be used.

記錄部M2儲存各種資料。記錄部M2儲存例如由讀取部M1從記錄媒體RM讀取出來的程式、處理工件W之際的各種資料（所謂的處理配方）、藉由外部輸入裝置（未圖示）從操作者輸入的設定資料等。The recording unit M2 stores various data. The recording unit M2 stores, for example, a program read from the recording medium RM by the reading unit M1, various data (so-called processing recipes) when the workpiece W is processed, and data input from an operator through an external input device (not shown). setting data, etc.

處理部M3處理各種資料。處理部M3例如依據記錄部M2所儲存的各種資料，產生用以令塗佈單元U1、熱處理單元U2及膜去除單元U13動作的動作信號。The processing unit M3 processes various data. For example, the processing unit M3 generates an operation signal for operating the coating unit U1 , the heat treatment unit U2 and the film removing unit U13 according to various data stored in the recording unit M2 .

指示部M4將處理部M3所產生的動作信號發送至各種裝置。例如，發送至加熱機構60的動作信號之中，包含顯示送至加熱器63之電流值的信號亦可。或者，指示部M4藉由數位類比轉換電路，將具有由處理部M3所設定之送至加熱器63之電流值的電流加以輸出至加熱器63亦可。The instruction unit M4 transmits the operation signal generated by the processing unit M3 to various devices. For example, a signal indicating the current value sent to the heater 63 may be included in the operation signal sent to the heating mechanism 60 . Alternatively, the instruction unit M4 may output to the heater 63 a current having the current value set by the processing unit M3 to be sent to the heater 63 through a digital-to-analog conversion circuit.

控制裝置100之硬體，例如由一或複數之控制用電腦構成。例如，控制裝置100具有圖8所示之電路120。電路120包含：一或複數之處理器121、記憶體122、儲存器123、輸出入埠124、計時器125。儲存器123具有例如硬碟等電腦可讀取記錄媒體。記錄媒體儲存用以使塗佈・顯影裝置2執行後述基板處理程序的程式。記錄媒體為非揮發性半導體記憶體、記錄磁碟及光碟片等可取出式媒體亦可。記憶體122暫時儲存：從儲存器123之記錄媒體裝載的程式、及處理器121得到的運算結果。處理器121以和記憶體122協同的方式執行上述程式，藉此構成上述各功能模組。輸出入埠124按照來自處理器121的指令，而在與基板處理系統1的各部分之間進行電信號的輸出入。計時器125例如計算一定週期的基準脈衝，藉此測量經過時間。The hardware of the control device 100 is constituted by, for example, one or a plurality of control computers. For example, the control device 100 has the circuit 120 shown in FIG. 8 . The circuit 120 includes: one or more processors 121 , a memory 122 , a storage 123 , an I/O port 124 , and a timer 125 . The storage 123 has a computer-readable recording medium such as a hard disk. The recording medium stores a program for causing the coating/developing apparatus 2 to execute a substrate processing procedure described later. The recording medium may be a removable medium such as a nonvolatile semiconductor memory, a recording disk, and an optical disk. The memory 122 temporarily stores: the program loaded from the recording medium of the storage 123 and the operation result obtained by the processor 121 . The processor 121 executes the above-mentioned programs in cooperation with the memory 122, thereby forming the above-mentioned functional modules. The I/O port 124 performs the I/O of electrical signals with various parts of the substrate processing system 1 according to the instructions from the processor 121 . The timer 125 measures the elapsed time by, for example, counting a reference pulse of a certain period.

控制裝置100藉由上述構成，對基板處理系統1包含的塗佈單元U1、熱處理單元U2、及膜去除單元U13等進行控制。又，控制裝置100也對圖7中未圖示之其他單元進行控制亦可。另外，上述控制裝置100之構成為一例，並不限於上述構成。The control apparatus 100 controls the application|coating unit U1, the heat processing unit U2, the film removal unit U13, etc. which are included in the substrate processing system 1 by the said structure. In addition, the control device 100 may also control other units not shown in FIG. 7 . In addition, the structure of the said control apparatus 100 is an example, and it is not limited to the said structure.

［基板處理方法］ 參照圖9及圖10，針對基板處理方法之一例進行說明。圖9說明有關對工件W進行之光阻膜形成的一連串處理。圖9所示之各步驟，係藉由控制裝置100對構成塗佈・顯影裝置2的各單元進行控制來執行。[Substrate processing method] An example of a substrate processing method will be described with reference to FIGS. 9 and 10 . FIG. 9 illustrates a series of processes related to photoresist film formation on the workpiece W. As shown in FIG. The steps shown in FIG. 9 are executed by the control device 100 controlling each unit constituting the coating and developing device 2 .

首先，控制裝置100執行步驟S01。在步驟S01中，控制裝置100將工件W送入處理模組12之塗佈單元U1，並對工件W之表面Wa供給處理液L1，而塗佈光阻液。又，在步驟S01之前，於處理模組11中，在工件W之表面Wa形成底層膜亦可。藉此，如圖10（a）所示，在工件W形成光阻膜R1（對應於光阻膜R1的塗佈膜）。First, the control device 100 executes step S01. In step S01 , the control device 100 sends the workpiece W into the coating unit U1 of the processing module 12 , and supplies the processing liquid L1 to the surface Wa of the workpiece W to coat the photoresist liquid. In addition, before step S01, in the processing module 11, a primer film may be formed on the surface Wa of the workpiece W. Thereby, as shown in FIG. 10( a ), a photoresist film R1 (a coating film corresponding to the photoresist film R1 ) is formed on the workpiece W. As shown in FIG.

接著，控制裝置100執行步驟S02。在步驟S02中，對於輸送至處理模組12之塗佈單元U1之狀態下的工件W，控制裝置100對由塗佈於其表面Wa上之光阻液構成的光阻膜R1之頂面供給處理液L2，而形成界面控制膜R2。藉此，如圖10（b）所示，在工件W之光阻膜R1（對應於光阻膜R1的光阻液層）上形成界面控制膜R2。界面控制膜R2可以覆蓋光阻膜R1之表面整體的方式形成。在此情形，能提高藉由設置界面控制膜R2達到之後述效果。但是，以光阻膜R1之一部分露出於表面的狀態形成有界面控制膜R2亦可。Next, the control device 100 executes step S02. In step S02 , the control device 100 supplies the top surface of the photoresist film R1 composed of the photoresist liquid coated on the surface Wa of the workpiece W in the state of being transported to the coating unit U1 of the processing module 12 The processing liquid L2 forms the interface control film R2. Thereby, as shown in FIG. 10( b ), an interface control film R2 is formed on the photoresist film R1 of the workpiece W (corresponding to the photoresist liquid layer of the photoresist film R1 ). The interface control film R2 may be formed so as to cover the entire surface of the photoresist film R1. In this case, by providing the interface control film R2, the effect to be described later can be enhanced. However, the interface control film R2 may be formed in a state where a part of the photoresist film R1 is exposed on the surface.

接著，控制裝置100執行步驟S03。在步驟S03中，控制裝置100將工件W送入處理模組12之熱處理單元U2，並在加熱機構60進行加熱處理。此時，從溶劑供給部70及氣體供給部73供給氣體，而使腔室64內成為加熱處理用的氣體環境。腔室64內之氣壓可調整為大氣壓的程度。藉由加熱機構60，例如使熱板62之溫度成為50℃～150℃左右，並使供給至腔室64內的氣體之溫度成為30℃～60℃左右。在此狀態下，將工件W支持於熱板62上，對工件W進行加熱處理。加熱處理時間設定為例如數分鐘～數十分鐘左右。對工件W進行加熱處理之結果，工件W與光阻膜R1之界面、及光阻膜R1與界面控制膜R2之間會發生成分不均勻分布，但是由於工件W之頂面被界面控制膜R2所覆蓋，故使成分不均勻分布受抑制。又，圖10（c）示意地顯示，在工件W與光阻膜R1之界面會發生的成分不均勻分布。Next, the control device 100 executes step S03. In step S03 , the control device 100 sends the workpiece W into the heat treatment unit U2 of the processing module 12 , and performs heat treatment in the heating mechanism 60 . At this time, the gas is supplied from the solvent supply part 70 and the gas supply part 73, and the inside of the chamber 64 becomes a gas atmosphere for heat treatment. The air pressure in the chamber 64 can be adjusted to the level of atmospheric pressure. By the heating mechanism 60, for example, the temperature of the hot plate 62 is about 50°C to 150°C, and the temperature of the gas supplied into the chamber 64 is about 30°C to 60°C. In this state, the workpiece W is supported on the hot plate 62, and the workpiece W is heated. The heat treatment time is set to, for example, about several minutes to several tens of minutes. As a result of the heat treatment of the workpiece W, the interface between the workpiece W and the photoresist film R1 and between the photoresist film R1 and the interface control film R2 will have uneven distribution of components, but because the top surface of the workpiece W is blocked by the interface control film R2 covered, so that the uneven distribution of components is suppressed. 10( c ) schematically shows the uneven distribution of components that occurs at the interface between the workpiece W and the photoresist film R1 .

接著，控制裝置100執行步驟S04。在步驟S04中，控制裝置100將工件W送入膜去除單元U13，並對工件W之表面Wa供給處理液L3，而去除設在表面Wa之界面控制膜R2。藉此，如圖10（c）所示，去除工件W之界面控制膜R2，而形成光阻膜R1露出來的狀態。Next, the control device 100 executes step S04. In step S04, the control apparatus 100 sends the workpiece|work W into the film removal unit U13, supplies the process liquid L3 to the surface Wa of the workpiece|work W, and removes the interface control film R2 provided on the surface Wa. Thereby, as shown in FIG.10(c), the interface control film R2 of the workpiece|work W is removed, and the state in which the photoresist film R1 is exposed is formed.

接著，控制裝置100執行步驟S05。在步驟S05中，控制裝置100將工件W送入曝光裝置3，對工件W進行曝光處理。又，在步驟S05之前，依需要而在處理模組13進行上層膜形成處理亦可。藉由曝光裝置3進行曝光處理之結果，將在光阻膜R1形成預定之圖案。Next, the control device 100 executes step S05. In step S05, the control apparatus 100 sends the workpiece|work W into the exposure apparatus 3, and performs an exposure process with respect to the workpiece|work W. As shown in FIG. In addition, before step S05, an upper layer film formation process may be performed in the process module 13 as needed. As a result of the exposure process performed by the exposure apparatus 3, a predetermined pattern will be formed in the photoresist film R1.

接著，控制裝置100執行步驟S06。在步驟S06中，控制裝置100將工件W送入處理模組14，對工件W之光阻膜R1進行顯影處理。其結果，便會去除光阻膜R1中之未感光部分。Next, the control device 100 executes step S06. In step S06, the control device 100 sends the workpiece W into the processing module 14, and performs development processing on the photoresist film R1 of the workpiece W. As a result, the non-photosensitive portion in the photoresist film R1 is removed.

［作用］ 依上述基板處理系統1及基板處理方法，在光阻膜R1之表面形成有界面控制膜R2的狀態下進行基板加熱，然後將光阻膜R1曝光。其結果，由於防止因為加熱導致光阻膜成分發生不均勻分布・分離等，故可精度良好地進行使用光阻膜之細微圖案形成。[effect] According to the substrate processing system 1 and the substrate processing method described above, the substrate is heated with the interface control film R2 formed on the surface of the photoresist film R1, and then the photoresist film R1 is exposed to light. As a result, since uneven distribution and separation of the components of the photoresist film due to heating are prevented, fine pattern formation using the photoresist film can be performed with high accuracy.

近年來，隨著圖案之細微化，人們以圖案崩塌等問題之避免為目的，而進行光阻膜之減薄。然而，申請人發現，減薄之光阻膜容易因為加熱處理而受影響。尤其，若是厚度30nm以下左右的光阻膜，於加熱時，在與下層之基板的界面、或表面附近，光阻材料含有的成分容易發生不均勻分布・分離，其結果有作為光阻之性能降低的可能性。成分的不均勻分布・分離，由於起因於加熱時的表面能之差，因此加熱時之界面的表面能之差必須縮小。In recent years, with the miniaturization of patterns, the photoresist film is thinned for the purpose of avoiding problems such as pattern collapse. However, the applicant has found that the thinned photoresist film is easily affected by the heat treatment. In particular, for a photoresist film with a thickness of about 30 nm or less, when heated, the components contained in the photoresist material tend to be unevenly distributed and separated at the interface with the underlying substrate or near the surface, and as a result, the photoresist performance is improved. reduced likelihood. The uneven distribution and separation of components are caused by the difference in surface energy during heating, so the difference in surface energy at the interface during heating must be reduced.

對此，在上述基板處理系統1及基板處理方法中，藉由對光阻膜R1上供給含有水溶性聚合物的處理液，以形成界面控制膜R2之後，在此狀態下進行加熱。因此，相較於光阻膜露出來的情形，由含有水溶性聚合物之處理液形成的界面控制膜R2可縮小與光阻材料的表面能之差。因此，可防止在光阻膜表面發生光阻膜之成分的不均勻分布・分離等，能精度良好地進行細微圖案形成。In contrast, in the above-described substrate processing system 1 and substrate processing method, the interface control film R2 is formed by supplying a processing liquid containing a water-soluble polymer onto the photoresist film R1, and then heating is performed in this state. Therefore, compared with the case where the photoresist film is exposed, the interface control film R2 formed by the treatment liquid containing the water-soluble polymer can reduce the difference in the surface energy of the photoresist material. Therefore, uneven distribution and separation of the components of the photoresist film can be prevented from occurring on the surface of the photoresist film, and fine patterning can be performed with high accuracy.

又，在上述實施態樣中，加熱係在藉由溶劑供給部70供給之有機溶劑蒸氣的環境氣體中進行。如前述，在有機溶劑蒸氣之環境氣體中進行基板加熱，藉此可進一步抑制光阻膜之成分的不均勻分布・分離。Moreover, in the said embodiment, heating is performed in the ambient gas of the organic solvent vapor supplied by the solvent supply part 70. As described above, the substrate heating is performed in the atmosphere of organic solvent vapor, thereby further suppressing uneven distribution and separation of the components of the photoresist film.

又，加熱係在藉由氣體供給部73供給之氮、稀有氣體及二氧化碳中任一環境氣體中進行亦可。如上述，在氮、稀有氣體及二氧化碳中任一環境氣體中進行基板加熱，藉此可進一步抑制光阻膜之成分的不均勻分布・分離。在氮、稀有氣體及二氧化碳中任一環境氣體中進行加熱處理時，舉例來說，藉由加熱機構60，例如使熱板62之溫度成為50℃～150℃左右，並使供給至腔室64內的氣體之溫度成為室溫的程度。In addition, heating may be performed in any ambient gas of nitrogen, rare gas, and carbon dioxide supplied from the gas supply unit 73 . As described above, the substrate heating is performed in an ambient gas including nitrogen, rare gas and carbon dioxide, whereby uneven distribution and separation of the components of the photoresist film can be further suppressed. When the heating treatment is performed in any ambient gas among nitrogen, rare gas, and carbon dioxide, for example, the temperature of the hot plate 62 is set to about 50° C. to 150° C. by the heating mechanism 60 and supplied to the chamber 64 . The temperature of the gas inside becomes room temperature.

另外，加熱係設計成，不使用溶劑供給部70及氣體供給部73而在大氣中進行的構成亦可。即使是在大氣中加熱的情形，仍可抑制光阻膜之成分的不均勻分布・分離。在大氣中進行加熱處理時，舉例來說，藉由加熱機構60，例如使熱板62之溫度成為50℃～150℃左右，並使供給至腔室64內的氣體之溫度成為室溫的程度。In addition, the heating system may be designed to be performed in the atmosphere without using the solvent supply unit 70 and the gas supply unit 73 . Even in the case of heating in the atmosphere, the uneven distribution and separation of the components of the photoresist film can be suppressed. When the heat treatment is performed in the atmosphere, for example, the temperature of the hot plate 62 is set to about 50° C. to 150° C. by the heating mechanism 60 , and the temperature of the gas supplied into the chamber 64 is about room temperature. .

又，加熱時之環境氣體，相較於採用大氣，採用有機溶劑蒸氣之環境氣體、或氮、稀有氣體及二氧化碳中任一環境氣體，可抑制光阻膜之成分的不均勻分布・分離。由於氮、稀有氣體及二氧化碳均為活性較低的氣體，因此相較於大氣，可減輕在加熱時對光阻膜產生的影響。又，有機溶劑蒸氣由於表面自由能接近光阻膜，因此相較於氮、稀有氣體及二氧化碳，又可進一步減輕對光阻膜的影響。另外，將有機溶劑蒸氣、與氮、稀有氣體及二氧化碳加以混合使用亦可。In addition, the use of the ambient gas during heating can suppress uneven distribution and separation of the components of the photoresist film by using the ambient gas of organic solvent vapor, or any ambient gas of nitrogen, rare gas and carbon dioxide, rather than using the atmosphere. Since nitrogen, noble gas, and carbon dioxide are all gases with low activity, the effect on the photoresist film during heating can be reduced compared to the atmosphere. In addition, since the surface free energy of the organic solvent vapor is close to the photoresist film, it can further reduce the influence on the photoresist film compared with nitrogen, rare gas and carbon dioxide. In addition, the organic solvent vapor may be used in combination with nitrogen, a rare gas, and carbon dioxide.

又，在加熱之後且曝光之前，於膜去除單元U13去除界面控制膜亦可。藉由在曝光之前去除界面控制膜，由於在加熱時可抑制光阻膜之成分的不均勻分布・分離，並且在曝光時不必因為考慮界面控制膜而進行光量的調整等，因此可更簡單地實現精度良好之細微圖案形成。當欲在光阻膜上存在界面控制膜的狀態下曝光時，由於將必須考慮界面控制膜之影響而調節曝光量，因此有對細微圖案形成產生影響的可能性。如上述，於去除界面控制膜之後再曝光的情形，將不必考慮界面控制膜而進行曝光量調節。In addition, the interface control film may be removed in the film removal unit U13 after heating and before exposure. By removing the interface control film before exposure, uneven distribution and separation of the components of the photoresist film during heating can be suppressed, and there is no need to adjust the amount of light in consideration of the interface control film during exposure. Realize fine pattern formation with high precision. When exposure is to be performed in a state where the interface control film is present on the photoresist film, since the exposure amount must be adjusted in consideration of the influence of the interface control film, there is a possibility that the formation of fine patterns may be affected. As described above, in the case of exposing after removing the interface control film, the exposure amount adjustment will be performed without considering the interface control film.

另外，曝光係設計成，藉由EUV光進行曝光處理亦可。在使用EUV光來曝光的情形，必須使光阻膜減薄。在此種情形，光阻膜之成分的不均勻分布・分離對圖案化的影響變大。因此，上述藉由形成界面控制膜而達到的效果，亦即對於因為加熱造成光阻膜之成分不均勻分布・分離等的防止效果，在藉由EUV光來曝光時特別有功效。In addition, the exposure system is designed so that exposure processing may be performed by EUV light. In the case of exposure using EUV light, the photoresist film must be thinned. In such a case, the uneven distribution and separation of the components of the photoresist film have a great influence on the patterning. Therefore, the above-mentioned effect achieved by forming the interface control film, that is, the effect of preventing uneven distribution and separation of components of the photoresist film due to heating, is particularly effective when exposed to EUV light.

［變形例］ 以上針對各種例示實施態樣進行說明，但本案發明不限於上述例示實施態樣，進行各種省略、置換及變更亦可。又，可組合不同實施態樣中之要素，而形成其它實施態樣。[Variation] Various exemplary embodiments have been described above, but the present invention is not limited to the above-described exemplary embodiments, and various omissions, substitutions, and changes may be made. Also, elements in different implementations can be combined to form other implementations.

例如，在上述實施態樣中，針對在光阻膜之頂面設置界面控制膜的情形進行說明，但進一步在光阻膜之底面設置界面控制膜亦可。如圖10（c）所示，在工件W與光阻膜R1之間也會因為加熱而發生成分的不均勻分布等。因此，為了避免此種情況，藉由塗佈含有水溶性聚合物的處理液而設置界面控制膜亦可。又，設在光阻膜R1之底面的界面控制膜可變更材料。例如，從防止剝離等之觀點，即便是設置EUV微影用光阻膜的情形，在基板與光阻膜之間形成含矽抗反射塗層（SiARC）作為界面控制膜亦可。For example, in the above-mentioned embodiment, the case where the interface control film is provided on the top surface of the photoresist film is described, but the interface control film may be further provided on the bottom surface of the photoresist film. As shown in FIG. 10( c ), also between the workpiece W and the photoresist film R1 , uneven distribution of components or the like occurs due to heating. Therefore, in order to avoid such a situation, an interface control film may be provided by applying a treatment liquid containing a water-soluble polymer. In addition, the material of the interface control film provided on the bottom surface of the photoresist film R1 can be changed. For example, from the viewpoint of preventing peeling, etc., even when a photoresist film for EUV lithography is provided, a silicon-containing antireflection coating (SiARC) may be formed between the substrate and the photoresist film as an interface control film.

又，上述實施態樣中，針對在塗佈單元U1形成光阻膜R1與界面控制膜R2兩者的情形進行說明，但此等處理在個別不同的單元進行亦可。In addition, in the above-mentioned embodiment, the case where both the photoresist film R1 and the interface control film R2 are formed in the coating unit U1 has been described, but these processes may be performed in separate units.

從以上說明可知，本揭示發明之各種實施態樣係以說明為目的而在本說明書中進行說明，在不脫離本揭示發明之範圍及主旨的情況下，可進行各種變更。因此，本說明書所揭示的各種實施態樣，並不以限定為目的，真正的範圍與主旨揭示於附件的申請專利範圍。As apparent from the above description, various embodiments of the present invention are described in this specification for the purpose of description, and various modifications can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limited, and the true scope and gist are disclosed in the appended claims.

1:基板處理系統 2:塗佈・顯影裝置 3:曝光裝置 4:載具區塊 5:處理區塊 6:介面區塊 11~14:處理模組 20:旋轉固持部 21:旋轉部 22:固持部 23:軸 30,40,80:液體供給部 31,41,81:液體源 32,42,82:泵浦 33,43,83:閥 34,44,84:噴嘴 35,45,85:配管 50:處理室 51:殼體 52:搬入口 55:溫度調整機構 55a:溫度調整板 55b:連結托架 55c:驅動機構 60:加熱機構 61:支持台 62:熱板 62a:載置面 63:加熱器 64:腔室(蓋體) 64a:頂蓋部 64b:腳部 65:升降機構 66:支持銷 67:升降機構 70:溶劑供給部 71:溶劑供給源 72:蒸氣供給管 73:氣體供給部 74:氣體供給源 75:氣體供給管 76:排氣部 77:排氣導管 78:開閉部 79:排氣部 100:控制裝置 120:電路 121:處理器 122:記憶體 123:儲存器 124:輸出入埠 125:計時器 A1,A8:傳遞臂 A3:輸送臂 A7:升降臂 C:載具 L1,L2,L3:處理液 M1:讀取部 M2:記錄部 M3:處理部 M4:指示部 R1:光阻膜 R2:界面控制膜 RM:記錄媒體 U1:塗佈單元 U2:熱處理單元 U10,U11:棚架單元 U13:膜去除單元 V1,V2:閥 W:工件 Wa:工件之表面 S01~S06:步驟1: Substrate processing system 2: Coating and developing device 3: Exposure device 4: Vehicle Block 5: Process the block 6: Interface block 11~14: Processing module 20: Rotary holding part 21: Rotary part 22: Retaining part 23: Shaft 30, 40, 80: Liquid supply section 31, 41, 81: Liquid Source 32, 42, 82: Pump 33, 43, 83: Valves 34, 44, 84: Nozzle 35, 45, 85: Piping 50: Processing room 51: Shell 52: Move in 55: Temperature adjustment mechanism 55a: Temperature adjustment plate 55b: Link bracket 55c: Drive mechanism 60: Heating mechanism 61: Support Desk 62: Hot Plate 62a: Mounting surface 63: Heater 64: Chamber (cover) 64a: top cover 64b: Feet 65: Lifting mechanism 66: Support pin 67: Lifting mechanism 70: Solvent Supply Department 71: Solvent supply source 72: Steam supply pipe 73: Gas Supply Department 74: Gas supply source 75: Gas supply pipe 76: Exhaust 77: Exhaust duct 78: Opening and closing part 79: Exhaust 100: Controls 120: Circuits 121: Processor 122: memory 123: Storage 124: I/O port 125: Timer A1, A8: Transfer Arm A3: Conveyor Arm A7: Lifting arm C: vehicle L1, L2, L3: Treatment fluid M1: Reader M2: Records Department M3: Processing Department M4: Indication part R1: photoresist film R2: Interface Control Membrane RM: Recording Media U1: Coating unit U2: Heat Treatment Unit U10, U11: Shelving units U13: Membrane removal unit V1, V2: valve W: workpiece Wa: the surface of the workpiece S01~S06: Steps

〔圖1〕圖1係顯示基板處理系統之一例的示意立體圖。 〔圖2〕圖2係顯示圖1所示基板處理系統之內部構成一例的示意圖。 〔圖3〕圖3係顯示圖1所示基板處理系統之內部構成一例的示意圖。 〔圖4〕圖4係顯示處理模組之一例的示意圖。 〔圖5〕圖5係顯示處理模組之一例的示意圖。 〔圖6〕圖6係顯示處理模組之一例的示意圖。 〔圖7〕圖7係顯示基板處理系統之主要部分之一例的區塊圖。 〔圖8〕圖8係顯示控制裝置之硬體構成之一例的概略圖。 〔圖9〕圖9係顯示基板處理方法之一例的流程圖。 〔圖10〕圖10（a）、圖10（b）、圖10（c）係顯示隨著基板處理方法之進行而產生的工件表面變化之一例的圖式。[Fig. 1] Fig. 1 is a schematic perspective view showing an example of a substrate processing system. [ FIG. 2 ] FIG. 2 is a schematic diagram showing an example of the internal configuration of the substrate processing system shown in FIG. 1 . [FIG. 3] FIG. 3 is a schematic diagram showing an example of the internal configuration of the substrate processing system shown in FIG. 1. [FIG. [FIG. 4] FIG. 4 is a schematic diagram showing an example of a processing module. [FIG. 5] FIG. 5 is a schematic diagram showing an example of a processing module. [FIG. 6] FIG. 6 is a schematic diagram showing an example of a processing module. [FIG. 7] FIG. 7 is a block diagram showing an example of a main part of a substrate processing system. [FIG. 8] FIG. 8 is a schematic diagram showing an example of the hardware configuration of the control device. [FIG. 9] FIG. 9 is a flowchart showing an example of a substrate processing method. [Fig. 10] Fig. 10(a), Fig. 10(b), and Fig. 10(c) are diagrams showing an example of changes in the surface of the workpiece that occur with the progress of the substrate processing method.

S01~S06:步驟 S01~S06: Steps

Claims (7)

一種基板處理方法，包含： 在基板之表面形成光阻膜； 對該基板之該光阻膜之表面，供給含有水溶性聚合物的處理液，而形成界面控制膜； 將形成有該界面控制膜之該基板進行加熱；及 將加熱後之該基板上形成的該光阻膜進行曝光。A substrate processing method, comprising: forming a photoresist film on the surface of the substrate; supplying a treatment liquid containing a water-soluble polymer to the surface of the photoresist film on the substrate to form an interface control film; heating the substrate on which the interface control film is formed; and The photoresist film formed on the substrate after heating is exposed to light. 如請求項1之基板處理方法，其中， 該加熱係在有機溶劑蒸氣之環境氣體中進行。The substrate processing method of claim 1, wherein, The heating is carried out in an ambient atmosphere of organic solvent vapor. 如請求項1之基板處理方法，其中， 該加熱係在氮、稀有氣體及二氧化碳中任一環境氣體中進行。The substrate processing method of claim 1, wherein, This heating is performed in any ambient gas among nitrogen, rare gas and carbon dioxide. 如請求項1至3中任一項之基板處理方法，更包含： 在該加熱之後且於該曝光之前，去除該界面控制膜。The substrate processing method according to any one of claims 1 to 3, further comprising: After the heating and before the exposure, the interface control film is removed. 如請求項1至3中任一項之基板處理方法，其中， 在該曝光中，藉由EUV光進行曝光。The substrate processing method of any one of claims 1 to 3, wherein, In this exposure, exposure is performed by EUV light. 一種基板處理裝置，具備： 光阻液供給部，以對基板之表面供給光阻液的方式構成； 聚合物供給部，以對該基板之表面供給含有水溶性聚合物之處理液的方式構成； 加熱處理部，將該基板進行加熱；及 控制部； 該控制部執行下述處理： 控制該光阻液供給部，俾對該基板之表面形成光阻膜； 控制該聚合物供給部，俾在該基板之該光阻膜之表面形成界面控制膜； 控制該加熱處理部，俾將形成有該界面控制膜之基板在曝光前予以加熱。A substrate processing apparatus, comprising: The photoresist liquid supply part is formed by supplying the photoresist liquid to the surface of the substrate; The polymer supply part is configured to supply a treatment liquid containing a water-soluble polymer to the surface of the substrate; a heat treatment part for heating the substrate; and control department; The control unit performs the following processing: controlling the photoresist liquid supply part to form a photoresist film on the surface of the substrate; controlling the polymer supply part to form an interface control film on the surface of the photoresist film of the substrate; The heat treatment section is controlled so that the substrate on which the interface control film is formed is heated before exposure. 一種電腦可讀取之記錄媒體，其儲存有程式，該程式用以令裝置執行如請求項1至5中任一項之基板處理方法。A computer-readable recording medium storing a program for causing an apparatus to execute the substrate processing method according to any one of claims 1 to 5.
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