TW202104041A - Method for processing fragile substrates employing temporary bonding of the substrates to carriers - Google Patents

Method for processing fragile substrates employing temporary bonding of the substrates to carriers Download PDF

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TW202104041A
TW202104041A TW109106886A TW109106886A TW202104041A TW 202104041 A TW202104041 A TW 202104041A TW 109106886 A TW109106886 A TW 109106886A TW 109106886 A TW109106886 A TW 109106886A TW 202104041 A TW202104041 A TW 202104041A
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substrate
carrier
bonding
front side
area
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TW109106886A
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西薇亞 史偉恩湯尼
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瑞士商艾維太克股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/061Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
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    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001General methods for coating; Devices therefor
    • C03C17/002General methods for coating; Devices therefor for flat glass, e.g. float glass
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • CCHEMISTRY; METALLURGY
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    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/30Aspects of methods for coating glass not covered above
    • C03C2218/365Coating different sides of a glass substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

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Abstract

The present invention is directed to a method for processing a fragile, e.g. (ultra-)thin and/or large, substrate (1) having a front side surface and a back side surface, the method comprising bonding the back side surface of the substrate (1) to a first carrier (2) at one or more first bonding areas, applying one or more first vacuum treatment processes to the front side surface of the substrate (1), and debonding the first carrier (2) from the back side surface of the substrate (1), wherein the one or more first bonding areas comprise only a fraction of the back side surface, the fraction being less than 50% of the back side surface. Furthermore, the present invention pertains to a method for manufacturing vacuum coated substrates for providing optical, optoelectronic and semiconductor devices, displays, micro-displays, device carrier systems for advanced packaging technology, such as fanout substrates, the method comprising the previously specified method for processing a substrate (1).

Description

用於利用將易碎基板暫時接合到載體來處理該易碎基板的方法Method for processing the fragile substrate by temporarily bonding the fragile substrate to the carrier

本發明係有關一種用於處理易碎基板的方法,該易碎基板係例如諸如玻璃或半導體晶圓的(超)薄及/或大型基板。尤其,本發明係有關利用將基板暫時地接合到載體,且更包括將一個以上的真空處理製程施加至該基板的表面。此外,本發明係有關一種使用所提出的基板處理方法來製造真空塗覆基板的方法。The present invention relates to a method for processing fragile substrates such as (ultra) thin and/or large substrates such as glass or semiconductor wafers. In particular, the present invention relates to temporarily bonding a substrate to a carrier, and further includes applying more than one vacuum treatment process to the surface of the substrate. In addition, the present invention relates to a method for manufacturing a vacuum coated substrate using the proposed substrate processing method.

為了製造用於諸如光子學、光電學、微機電系統(MEMS)及無線通訊之領域中的高級應用的高品質、高性能的光學、光電及半導體裝置,趨勢係為朝向處理越來越薄及越來越大的基板。此種基板係為極易碎的,且在直接搬運時容易損壞,例如當準備用於在用於處理基板的系統內處理及運輸時,該系統包含用於不同製造步驟的多個模組。此外,當基板經歷真空處理製程時,相當大的應力及應變施加到在基板上。因此,在先前技術中,此種易碎基板典型地沿著基板的圓周機械地夾持在兩個環形框架之間,以在整個基板處理之期間搬運。然而,此具有下述缺點,即在機械夾持的區域中犧牲基板的大部分周邊區域,亦即,可以用於提供最終產品的區域。此外,此種夾持係為勞動密集的且難以自動化。夾持框架的表面容易形成顆粒。因此,夾持框架需要經常地清潔。因此,需要用於搬運及處理易碎基板的改進方法。In order to manufacture high-quality, high-performance optical, optoelectronic and semiconductor devices for advanced applications in fields such as photonics, optoelectronics, microelectromechanical systems (MEMS), and wireless communications, the trend is toward thinner and thinner processing. Growing substrates. Such substrates are extremely fragile and easily damaged during direct handling. For example, when they are prepared for processing and transportation in a system for processing substrates, the system includes multiple modules for different manufacturing steps. In addition, when the substrate undergoes a vacuum processing process, considerable stress and strain are applied to the substrate. Therefore, in the prior art, such fragile substrates are typically mechanically clamped between two ring frames along the circumference of the substrate to be transported during the entire substrate processing. However, this has the disadvantage that most of the peripheral area of the substrate is sacrificed in the mechanically clamped area, that is, the area that can be used to provide the final product. In addition, such clamping systems are labor intensive and difficult to automate. Particles are easily formed on the surface of the clamping frame. Therefore, the clamping frame needs to be cleaned frequently. Therefore, there is a need for improved methods for handling and handling fragile substrates.

本發明的目的之一在於提供一種用於搬運及處理易碎基板的改進方法,該易碎基板係例如(超)薄、大型基板。此目的係藉由根據請求項1的方法來實現。在附屬項中給出根據本發明之方法的特定實施例。One of the objectives of the present invention is to provide an improved method for handling and processing fragile substrates, such as (ultra) thin and large substrates. This purpose is achieved by the method according to claim 1. Specific embodiments of the method according to the invention are given in the appendix.

另外,本發明的另一個目的在於提供一種用於製造真空塗覆基板的改進方法,以提供高品質、高性能的光學、光電及半導體裝置。此目的係藉由根據請求項20的方法實現。In addition, another object of the present invention is to provide an improved method for manufacturing vacuum-coated substrates to provide high-quality, high-performance optical, optoelectronic and semiconductor devices. This objective is achieved by the method according to claim 20.

本發明提供一種用於處理基板的方法,該基板具有一前側表面及一背側表面,該方法包含以下步驟: a)在一個以上的第一接合區域處將該基板的背側表面接合到第一載體; b)將一個以上的第一真空處理製程施加至該基板的前側表面;及 c)使該第一載體從該基板的背側表面脫離, 其中該一個以上的第一接合區域僅包含該背側表面的一部分,該部分係小於該背側表面的50%。The present invention provides a method for processing a substrate, the substrate having a front side surface and a back side surface, and the method includes the following steps: a) bonding the backside surface of the substrate to the first carrier at more than one first bonding area; b) applying more than one first vacuum treatment process to the front surface of the substrate; and c) detach the first carrier from the backside surface of the substrate, The one or more first joining regions only include a part of the back surface, and the part is less than 50% of the back surface.

根據所提出的方法,基板的背側表面的僅一部分,亦即小於50%的基板的背側表面,在一個以上的分開的(亦即,個別的)第一接合區域處暫時地接合到第一載體。為了能夠將基板容易地搬運,執行將大而薄的基板暫時地接合到堅固的第一載體,隨後對該基板實行一個以上的第一真空處理製程,包括物理或化學塗覆製程,諸如物理氣相沉積(PVD)、化學氣相沉積(CVD)及原子層沉積(ALD)或電漿刻蝕製程(尤其是薄膜,表面處理),它們會在基板上施加相當大的應力及應變,通常會導致基板表面的實質翹曲/變形/彎曲。然而,藉由將基板牢固地接合到彈性的第一載體,避免基板的此種變形(或至少大幅地減小)。一旦已經完成對基板的前側表面的真空處理製程,可以藉由適當的脫離手段來釋放暫時接合。藉由在一個以上的第一接合區域處僅將基板的背側表面的一部分選擇性地接合到第一載體,亦即藉由儘可能地使第一接合區域最小化以實現所需的接合強度,來確保在第一接合區域變得不可用,尤其是損壞(例如被第一次接合/脫離過程的殘留物)之情況下,基板總面積的大部分(例如90%)保持為可用的,以提供最終產品(諸如請求項20中所述)。According to the proposed method, only a part of the backside surface of the substrate, that is, less than 50% of the backside surface of the substrate, is temporarily bonded to the first bonding area at more than one separate (that is, individual) first bonding area One carrier. In order to be able to transport the substrate easily, temporarily join a large and thin substrate to a strong first carrier, and then perform more than one first vacuum treatment process on the substrate, including a physical or chemical coating process, such as physical gas Phase deposition (PVD), chemical vapor deposition (CVD) and atomic layer deposition (ALD) or plasma etching processes (especially thin films, surface treatment), they will impose considerable stress and strain on the substrate, usually Causes substantial warpage/deformation/bending of the substrate surface. However, by firmly bonding the substrate to the elastic first carrier, such deformation of the substrate (or at least greatly reduced) is avoided. Once the vacuum treatment process on the front side surface of the substrate has been completed, the temporary bonding can be released by appropriate release means. By selectively bonding only a part of the backside surface of the substrate to the first carrier at more than one first bonding area, that is, by minimizing the first bonding area as much as possible to achieve the required bonding strength , To ensure that when the first bonding area becomes unusable, especially if it is damaged (for example, by the residue of the first bonding/disengaging process), most of the total substrate area (for example, 90%) remains usable, To provide the final product (such as described in claim 20).

在一個實施例中,該方法更包含以下步驟: d)在施加該一個以上的第一真空處理製程的步驟b)之後,且在使該第一載體脫離的步驟c)之前或基本上與使該第一載體脫離的步驟c)同時地(例如一起),在一個以上的第二接合區域處將該基板的前側表面接合到第二載體(同時保持與第一載體的接合); e)在使該第一載體脫離的步驟c)之後,將一個以上的第二真空處理製程施加至該基板的背側表面;及 f)使該第二載體從該基板的前側表面脫離, 其中該一個以上的第二接合區域僅包含該前側表面的一部分,該部分係小於該前側表面的50%。In one embodiment, the method further includes the following steps: d) after step b) of applying the one or more first vacuum treatment processes, and before step c) of detaching the first carrier or substantially simultaneously with step c) of detaching the first carrier (for example Together), bonding the front side surface of the substrate to the second carrier at more than one second bonding area (while maintaining the bonding with the first carrier); e) after step c) of detaching the first carrier, applying one or more second vacuum treatment processes to the backside surface of the substrate; and f) separating the second carrier from the front surface of the substrate, The one or more second joining regions only include a part of the front side surface, and the part is less than 50% of the front side surface.

根據所提出的方法,基板的前側表面的一部分,例如多達50%的基板的前側表面,在一個以上的分開的(亦即,個別的)第二接合區域處暫時地接合到第二載體。執行將大而薄的基板暫時地接合到堅固的第二載體,同時仍暫時地接合到堅固的第一載體,以便防止薄基板發生嚴重的翹曲/變形/彎曲(此會在從第一載體脫離之後、在接合到第二載體之前發生),且一旦第一載體已經從基板脫離之後保持對基板的容易搬運,隨後對基板實行一個以上的第二真空處理製程,包括物理或化學塗覆製程,諸如物理蒸氣沉積(PVD)、化學氣相沉積(CVD)及原子層沉積(ALD)或電漿蝕刻製程(尤其是薄膜,表面處理),它們又在基板上施加相當大的應力及應變,通常會導致基板表面的實質翹曲/變形/彎曲。然而,藉由已經將基板牢固地接合到彈性的第二載體,再次避免基板的此種變形(或至少大幅地減少)。一旦已經完成對基板的背側表面的真空處理製程,可以藉由適當的脫離手段來釋放暫時接合。藉由在一個以上的第二接合區域處僅將基板的前側表面的一部分選擇性地接合到第二載體,亦即藉由儘可能地使第二接合區域最小化以實現所需的接合強度,來確保在第二接合區域藉由第二次接合/脫離過程變得不可用(尤其是損壞)之情況下,基板總面積的大部分(例如90%)保持為可用的,以提供最終產品(諸如請求項20中所述)。保持與第一載體的接合也使得更容易及更快地將基板接合到第二載體。According to the proposed method, a part of the front side surface of the substrate, for example up to 50% of the front side surface of the substrate, is temporarily bonded to the second carrier at more than one separate (ie, individual) second bonding area. Perform temporary bonding of a large and thin substrate to a strong second carrier while still temporarily bonding to a strong first carrier, in order to prevent serious warpage/deformation/bending of the thin substrate (this will cause problems from the first carrier After detachment, before joining to the second carrier), and once the first carrier has been detached from the substrate, the substrate is easily handled, and then more than one second vacuum treatment process is performed on the substrate, including a physical or chemical coating process , Such as physical vapor deposition (PVD), chemical vapor deposition (CVD) and atomic layer deposition (ALD) or plasma etching process (especially thin film, surface treatment), they put considerable stress and strain on the substrate, It usually causes substantial warpage/deformation/bending of the substrate surface. However, by already firmly bonding the substrate to the elastic second carrier, such deformation of the substrate is again avoided (or at least greatly reduced). Once the vacuum processing process on the backside surface of the substrate has been completed, the temporary bonding can be released by a suitable release method. By selectively bonding only a part of the front side surface of the substrate to the second carrier at more than one second bonding area, that is, by minimizing the second bonding area as much as possible to achieve the required bonding strength, To ensure that when the second bonding area becomes unusable (especially damaged) by the second bonding/disengaging process, most of the total area of the substrate (for example, 90%) remains available to provide the final product ( (As described in claim 20). Maintaining the bond with the first carrier also makes it easier and faster to bond the substrate to the second carrier.

在另一實施例中,該方法更包含以下步驟:在施加該一個以上的第一真空處理製程的步驟之後,且在施加該一個以上的第二真空處理製程的步驟之前,將該基板從一前側處理位置翻轉到一背側處理位置。為了將一個以上的第二真空處理製程施加至基板的背側表面,典型地需要將基板從前側處理位置翻轉(180°)到背側處理位置。此移動對於大而薄的基板是特別微妙的,且藉由將基板接合到第一或第二載體,或者同時接合到第一及第二載體,使應變及應力減小,與基板僅接合到兩個載體中之一者且同時翻轉相比較,此移動提供增加的支撐。因此,在將基板接合到第二載體且同時將基板仍然接合到第一載體之前,在將基板接合到第二載體且同時將基板也接合到第一載體之後,或者在使基板從第一載體脫離且同時將基板接合到第二載體之後,可以執行將基板翻轉的步驟。In another embodiment, the method further includes the following steps: after the step of applying the one or more first vacuum treatment processes, and before the step of applying the one or more second vacuum treatment processes, removing the substrate from one The front processing position is flipped to a back processing position. In order to apply more than one second vacuum processing process to the backside surface of the substrate, it is typically necessary to flip (180°) the substrate from the front side processing position to the back side processing position. This movement is particularly subtle for large and thin substrates, and by bonding the substrate to the first or second carrier, or to the first and second carriers at the same time, the strain and stress are reduced, and the substrate is only bonded to the substrate. Compared with one of the two carriers flipping simultaneously, this movement provides increased support. Therefore, before bonding the substrate to the second carrier while still bonding the substrate to the first carrier, after bonding the substrate to the second carrier and simultaneously bonding the substrate to the first carrier, or after removing the substrate from the first carrier After detaching and simultaneously bonding the substrate to the second carrier, a step of turning the substrate over may be performed.

在該方法的另一實施例中,該一個以上的第一接合區域的總面積係小於該基板的背側表面的總面積的10%,尤其是小於5%,更尤其是小於2%。In another embodiment of the method, the total area of the one or more first bonding regions is less than 10%, especially less than 5%, more especially less than 2% of the total area of the backside surface of the substrate.

在該方法的另一實施例中,該一個以上的第二接合區域的總面積係小於該基板的前側表面的總面積的10%,尤其是小於5%,更尤其是小於2%。In another embodiment of the method, the total area of the one or more second bonding regions is less than 10%, especially less than 5%, more especially less than 2% of the total area of the front side surface of the substrate.

在該方法的另一實施例中,該一個以上的第一及/或第二接合區域係為點狀或(直線或彎曲)線狀。In another embodiment of the method, the one or more first and/or second joining regions are point-shaped or (straight or curved) linear.

在該方法的另一實施例中,利用三個以上的第一接合區域。In another embodiment of the method, more than three first bonding areas are used.

在該方法的另一實施例中,利用三個以上的第二接合區域。In another embodiment of the method, more than three second bonding areas are used.

在該方法的另一實施例中,該等第一接合區域中的一者或多者係位於該基板的背側表面的周邊,且尤其是該等第一接合區域中的至少一者係位於該基板的背側表面的一中央區域。In another embodiment of the method, one or more of the first bonding regions are located on the periphery of the backside surface of the substrate, and in particular, at least one of the first bonding regions is located A central area of the backside surface of the substrate.

在該方法的另一實施例中,該等第二接合區域中的一者或多者係位於該基板的前側表面的周邊,且尤其是該等第二接合區域中的至少一者係位於該基板的前側表面的一中央區域。In another embodiment of the method, one or more of the second bonding regions are located on the periphery of the front side surface of the substrate, and in particular, at least one of the second bonding regions is located on the A central area of the front surface of the substrate.

在該方法的另一實施例中,該一個以上的第二接合區域係定位成與該一個以上的第一接合區域相對,且尤其是該一個以上的第二接合區域係與該一個以上的第一接合區域對準。In another embodiment of the method, the one or more second joining areas are positioned opposite to the one or more first joining areas, and in particular, the one or more second joining areas are opposite to the one or more first joining areas. A bonding area is aligned.

在另一實施例中,該一個以上的第一及/或第二接合區域藉由接合及/或脫離而不能使用,以提供由施加該一個以上的第一及/或第二真空處理製程所產生的產品,例如由於接合材料的殘留物或是與接合及/或脫離相關的應變/應力。In another embodiment, the one or more first and/or second bonding regions cannot be used due to bonding and/or disengagement, so as to provide the first and/or second vacuum treatment process by applying the more than one first and/or second vacuum processing processes. The resulting product, for example due to residues of the bonding material or strain/stress associated with bonding and/or disengagement.

在該方法的另一實施例中,藉由凡得瓦力(分子間的力)、靜電力及施加一聚合物接合材料中的至少一者來實現與該第一及/或第二載體的接合,尤其是以接合墊及/或條帶之形式。接合區域之尺寸係設計成使得在接合區域處所提供用於實現將基板接合到第一或第二載體的總接合力足以保持基板的重量(當面向地面懸掛在第一或第二載體上時)。此意謂著當減小總接合區域以保持基板的重量時,每單位面積的接合力將增加。相關於幫助基板從第一/第二載體脫離,將每單位面積的接合力保持在一定位準/臨界值以下係為重要的。然而,目的係為儘可能地使總接合區域最小化,因為此會增加/最大化基板中可以用於提供最終產品的區域。In another embodiment of the method, at least one of Van der Waals force (intermolecular force), electrostatic force, and application of a polymer bonding material is used to achieve contact with the first and/or second carrier. Bonding, especially in the form of bonding pads and/or strips. The size of the bonding area is designed so that the total bonding force provided at the bonding area for bonding the substrate to the first or second carrier is sufficient to maintain the weight of the substrate (when facing the ground and suspended on the first or second carrier) . This means that when the total bonding area is reduced to maintain the weight of the substrate, the bonding force per unit area will increase. In relation to helping the substrate to detach from the first/second carrier, it is important to keep the bonding force per unit area below a positioning level/critical value. However, the goal is to minimize the total bonding area as much as possible, as this increases/maximizes the area in the substrate that can be used to provide the final product.

在利用靜電接合力的特定實施例中,藉由反轉施加的電荷以產生靜電接合力,同時地實現使第一載體從基板的背側表面脫離以及將基板的前側表面接合到第二載體。因此,一起執行使基板的背側表面從第一載體脫離且將基板的前側表面接合到第二載體(亦即,當電荷反轉以使靜電保持力/接合力的方向反轉時,基本上同時)。此處也要指出的是,使接合區域最小化,以便使得可以用於提供最終產品的基板的區域最大化。In a specific embodiment that utilizes electrostatic bonding force, the electrostatic bonding force is generated by reversing the applied charge, while simultaneously detaching the first carrier from the back side surface of the substrate and bonding the front side surface of the substrate to the second carrier. Therefore, detaching the back side surface of the substrate from the first carrier and bonding the front side surface of the substrate to the second carrier are performed together (that is, when the charge is reversed to reverse the direction of the electrostatic holding force/bonding force, basically at the same time). It is also pointed out here that the bonding area is minimized in order to maximize the area of the substrate that can be used to provide the final product.

可以在正常大氣壓條件下或在真空中(尤其是在低於大氣壓的壓力下)來執行接合。同樣地,可以在正常的大氣壓條件下或在真空中(尤其是在低於大氣壓的壓力下)來執行脫離。針對壓力及/或溫度而言,接合及脫離都不需要在相同的條件下進行。The bonding can be performed under normal atmospheric pressure conditions or in a vacuum (especially under a pressure below atmospheric pressure). Likewise, the detachment can be performed under normal atmospheric pressure conditions or in a vacuum (especially at a pressure lower than atmospheric pressure). Regarding pressure and/or temperature, neither joining nor disengaging need to be performed under the same conditions.

在該方法的另一實施例中,該聚合物接合材料包含下述中的至少一者:有機材料、矽樹脂、聚酰胺、包含羧基端基的材料,尤其是雙成分材料的多成分材料,該多成分材料包含尤其是底漆的光敏物質。In another embodiment of the method, the polymer bonding material includes at least one of the following: organic materials, silicone resins, polyamides, materials containing carboxyl end groups, especially multi-component materials of two-component materials, The multi-component material contains photosensitive substances, especially primers.

在該方法的另一實施例中,藉由具有方向依存性接合/黏著特性的一方向接合/黏著結構來實現與該第一及/或第二載體的接合,尤其是在該一個以上的第一或第二接合區域處施加時,相較於在平行於該基板的前側表面或背側表面之方向上,在垂直於該基板的前側表面或背側表面之方向上提供更大的接合力。In another embodiment of the method, the bonding with the first and/or second carrier is achieved by a one-directional bonding/adhesive structure having a directional-dependent bonding/adhesive characteristic, especially when the first and/or second carriers are attached When applied at one or second bonding area, it provides greater bonding force in a direction perpendicular to the front or back surface of the substrate than in a direction parallel to the front or back surface of the substrate .

在該方法的另一實施例中,藉由下述中的至少一者來實現使該第一及/或第二載體脫離:施加一(外部)機械分離力或一化學溶劑至該第一及/或第二接合區域及使該第一及/或第二接合區域暴露於光及/或熱,該光尤其是雷射光、更尤其是一準分子雷射的UV光。脫離可以尤其是在室溫下執行。In another embodiment of the method, the detachment of the first and/or second carrier is achieved by at least one of the following: applying an (external) mechanical separation force or a chemical solvent to the first and /Or the second bonding area and exposing the first and/or second bonding area to light and/or heat, the light being particularly laser light, more particularly UV light of an excimer laser. The detachment can be performed especially at room temperature.

在該方法的另一實施例中,為了使該第一載體脫離,尤其是經由該第一載體朝向該基板的背側表面施加該雷射光,及/或為了使該第二載體脫離,尤其是經由該第二載體朝向該基板的前側表面施加該雷射光。In another embodiment of the method, in order to detach the first carrier, especially to apply the laser light toward the back surface of the substrate via the first carrier, and/or to detach the second carrier, especially The laser light is applied toward the front surface of the substrate via the second carrier.

在該方法的另一實施例中,該基板的前側表面係塗覆有一光學濾波器層,尤其是一近紅外線NIR(帶通)濾波器層,尤其是該光學濾波器層係為施加該一個以上的第一真空處理製程的結果。In another embodiment of the method, the front surface of the substrate is coated with an optical filter layer, especially a near-infrared NIR (band pass) filter layer, especially the optical filter layer is applied with the one The result of the above first vacuum treatment process.

在該方法的另一實施例中,該一個以上的第一及/或第二真空處理製程中的至少一者包含下述中的至少一者:(電漿)蝕刻、電漿清潔及真空塗覆,尤其是物理氣相沉積(PVD)、化學氣相沉積(CVD)、電漿增強化學氣相沉積(PECVD)及原子層沉積(ALD),更尤其是在該基板的前側表面及/或背側表面上沉積一光學濾波器層、沉積一金屬化層及沉積一介電層中的至少一者。In another embodiment of the method, at least one of the one or more first and/or second vacuum treatment processes includes at least one of the following: (plasma) etching, plasma cleaning, and vacuum coating Cover, especially physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), more particularly on the front surface of the substrate and/or At least one of an optical filter layer, a metallization layer, and a dielectric layer is deposited on the backside surface.

在該方法的另一實施例中,該基板具有小於500μm,尤其是小於250μm的厚度。In another embodiment of the method, the substrate has a thickness of less than 500 μm, especially less than 250 μm.

在該方法的另一實施例中,該第一及/或第二載體具有大於500μm,尤其是大於1mm的厚度。In another embodiment of the method, the first and/or second carrier has a thickness greater than 500 μm, especially greater than 1 mm.

在該方法的另一實施例中,該基板具有至少100mm,尤其是至少200mm的橫向延伸範圍。In another embodiment of the method, the substrate has a lateral extension of at least 100 mm, especially at least 200 mm.

在該方法的另一實施例中,該第一及/或第二載體具有至少100mm,尤其是至少200mm的橫向延伸範圍。In another embodiment of the method, the first and/or second carrier has a lateral extension of at least 100 mm, especially at least 200 mm.

在該方法的另一個實施例中,該第一及/或第二載體適於作用成一穩定化本體或支撐/固定結構,尤其是剛性的。In another embodiment of the method, the first and/or second carrier is adapted to function as a stabilizing body or supporting/fixing structure, especially rigid.

在該方法的另一個實施例中,該第一及/或第二載體具有一平坦或彎曲表面。In another embodiment of the method, the first and/or second carrier has a flat or curved surface.

在該方法的另一實施例中,該基板的熱膨脹係數係與該第一及/或第二載體的熱膨脹係數基本上相同,且尤其是,該基板係由與該第一及/或第二載體相同的材料製成。In another embodiment of the method, the coefficient of thermal expansion of the substrate is substantially the same as the coefficient of thermal expansion of the first and/or second carrier, and in particular, the substrate is composed of the same coefficient of thermal expansion as the first and/or second carrier. The carrier is made of the same material.

在該方法的另一個實施例中,該基板係為一玻璃或半導體晶圓。In another embodiment of the method, the substrate is a glass or semiconductor wafer.

在該方法的另一個實施例中,該第一及/或第二載體係由玻璃、陶瓷材料、金屬或金屬化材料製成(例如具有諸如金屬表面塗層的金屬表面)。In another embodiment of the method, the first and/or second carrier system is made of glass, ceramic material, metal or metalized material (for example, having a metal surface such as a metal surface coating).

在該方法的另一實施例中,將步驟a)至c)及步驟d)至f)連續地重複一次或多次。藉此,附加的(第三、第四等)真空處理製程被施加至基板的前側表面及背側表面。第一載體及第二載體可以為此目的而重複使用,或者可以用附加的(第三、第四等)其他載體代替。通常,可以將載體設計及適配成一次性(可拋棄式)或(多次)可重複使用的載體,其中在後者之情況下,載體可能需要定期進行清潔步驟,亦即在一定次數的使用(接合/脫離週期)之後。In another embodiment of the method, steps a) to c) and steps d) to f) are continuously repeated one or more times. In this way, additional (third, fourth, etc.) vacuum processing processes are applied to the front and back surfaces of the substrate. The first carrier and the second carrier can be reused for this purpose, or can be replaced with additional (third, fourth, etc.) other carriers. Generally, the carrier can be designed and adapted to be a one-time (disposable) or (multiple) reusable carrier. In the latter case, the carrier may need to be cleaned regularly, that is, used for a certain number of times. (Engagement/disengagement cycle) after.

在該方法的另一個實施例中,藉由下述來實現接合:熱致動黏著劑、壓力致動黏著劑、溶劑致動黏著劑、UV(紫外線)致動黏著劑、(低溫)電漿致動黏著劑、高壓放電致動黏著劑或其任意組合。作為接合製程的一部分,可以藉由施加熱、壓力、溶劑、UV光(在選定的波長處,例如300nm)、高壓放電、(低溫)電漿或其任意何組合來致動接合材料。當與已致動的接合材料或黏著劑接觸時,基板黏著或附接至載體,因此將基板(其背側表面或前側表面)接合到(第一或第二)載體。In another embodiment of the method, bonding is achieved by the following: thermally actuated adhesive, pressure actuated adhesive, solvent actuated adhesive, UV (ultraviolet) actuated adhesive, (low temperature) plasma Actuation adhesive, high-voltage discharge activation adhesive, or any combination thereof. As part of the bonding process, the bonding material can be actuated by applying heat, pressure, solvent, UV light (at a selected wavelength, such as 300 nm), high voltage discharge, (low temperature) plasma, or any combination thereof. When in contact with the activated bonding material or adhesive, the substrate adheres or attaches to the carrier, thus bonding the substrate (the backside surface or the front side surface thereof) to the (first or second) carrier.

本發明更提供一種用於製造一真空塗覆基板的方法,以提供高品質、高性能的、諸如扇出型基板的用於先進封裝技術的光學、光電及半導體裝置、顯示器、微顯示器、裝置載體系統,該方法包含先前提及的用於處理基板的方法。The present invention further provides a method for manufacturing a vacuum-coated substrate to provide high-quality, high-performance optical, optoelectronic and semiconductor devices, displays, microdisplays, and devices for advanced packaging technologies such as fan-out substrates A carrier system, the method includes the previously mentioned method for processing a substrate.

在下述中,我們藉由大圓形超薄玻璃晶圓之形式的例示性基板,例如具有200mm的直徑及200μm的厚度的基板,來例示且提供根據本發明之方法的細節。然而,所提出的方法同樣也適用於其他尺寸、厚度及材料的易碎基板。In the following, we use an exemplary substrate in the form of a large circular ultra-thin glass wafer, such as a substrate with a diameter of 200 mm and a thickness of 200 μm, to exemplify and provide details of the method according to the present invention. However, the proposed method is also applicable to fragile substrates of other sizes, thicknesses and materials.

為了穩定化易碎基板,將其接合到載體以供後續的搬運。具有不同接合圖案/接合區域的適合載體的例子係在圖1a)至圖c)中示例。這些例示性的載體2具有與安裝在載體2上的基板相同的圓形形狀、尺寸及平面度。例如,載體2也由與基板相同的玻璃材料製成,因此具有與基板相同的熱膨脹係數,但相當地更厚,例如1mm厚。因此,載體2比易碎基板堅固得多,且因此可以作用成用於基板的穩定化本體或支撐結構。圖1a)係顯示第一(或同樣地/類似地,第二)載體2的頂視圖,該載體2具有四個小點狀/圓形接合墊3、3'、3''、3''的例示性配置,這些接合墊中的三個係位於載體2的周邊(亦即,接近其外邊緣),且這些接合墊中的第四個係位於載體2的中心處。墊3、3'、3''、3''的總接合區域約為基板的背側表面(或前側表面)之總面積的2%。圖1b)係顯示載體2的頂視圖,載體2具有從基板的中心徑向地延伸的三個條帶狀接合墊3、3'、3''的替代例示性配置。在此情況下,墊3、3'、3''的總接合區域約為基板的背側表面(或前側表面)之總面積的10%。最後,圖1c)係顯示載體2的頂視圖,載體2具有一個中心點狀接合墊3'''及三個周向配置的周向弧形接合墊3、3'、3''的另一例示性配置。在此情況下,墊3、3'、3''、3'''的總接合區域約為基板的背側表面(或前側表面)之總面積的6%。根據本發明,可以想到其他形狀及尺寸的接合墊/接合區域,以將基板的背側表面(或前側表面)的至多50%的一部分接合到載體2。In order to stabilize the fragile substrate, it is joined to the carrier for subsequent handling. Examples of suitable carriers with different bonding patterns/bonding areas are illustrated in Figures 1a) to c). These exemplary carriers 2 have the same circular shape, size, and flatness as the substrate mounted on the carrier 2. For example, the carrier 2 is also made of the same glass material as the substrate, and therefore has the same coefficient of thermal expansion as the substrate, but is considerably thicker, for example, 1 mm thick. Therefore, the carrier 2 is much stronger than a fragile substrate, and therefore can function as a stabilized body or support structure for the substrate. Figure 1a) shows a top view of the first (or likewise/similarly, second) carrier 2 with four small dot/circular bonding pads 3, 3', 3'', 3'' In the exemplary configuration of, three of these bonding pads are located at the periphery of the carrier 2 (that is, close to its outer edge), and the fourth of these bonding pads is located at the center of the carrier 2. The total bonding area of the pads 3, 3', 3", and 3" is approximately 2% of the total area of the back side surface (or front side surface) of the substrate. Figure 1b) is a top view showing the carrier 2 having an alternative exemplary configuration of three strip-shaped bonding pads 3, 3', 3" extending radially from the center of the substrate. In this case, the total bonding area of the pads 3, 3', 3" is about 10% of the total area of the back side surface (or front side surface) of the substrate. Finally, Figure 1c) shows a top view of the carrier 2. The carrier 2 has a central point-shaped bonding pad 3"' and three circumferentially arranged circumferentially arc-shaped bonding pads 3, 3', 3". Illustrative configuration. In this case, the total bonding area of the pads 3, 3', 3", 3'" is approximately 6% of the total area of the back side surface (or front side surface) of the substrate. According to the present invention, bonding pads/bonding areas of other shapes and sizes are conceivable to bond at most a part of 50% of the back side surface (or front side surface) of the substrate to the carrier 2.

根據圖2所示例的例子,首先將基板1安裝且接合到第一載體2上(參見圖2b中的步驟101)。基板1的背側表面係例如藉由使用四個小的圓形(點狀)接合墊3、3'、3''、3'''的聚合物接合而暫時地接合到載體2上,這些接合墊中的前三個3、3',3''係例如配置成沿著載體2的周邊彼此等距地間隔開,而第四個接合墊3'''係位於載體2的中心處(參見圖1a)及圖2a)i))。這些接合墊3、3'、3''、3'''僅在基板1的背側表面上佔據很小的空間(其約2%),且因此在基板1的背側表面被(第一)接合區域處的(解)接合損壞或污染之情況下,此將僅導致可以用於提供最終產品的區域的很小損失,亦即,由於接合僅犧牲基板1之區域的一小部分。另一方面,這些接合區域足以在隨後的真空處理製程之期間固定基板1,且避免由於由真空處理製程而施加在基板1(現在由載體1固定)上的應力及應變而使基板表面翹曲/變形/彎曲。According to the example illustrated in FIG. 2, the substrate 1 is first mounted and bonded to the first carrier 2 (see step 101 in FIG. 2b). The backside surface of the substrate 1 is temporarily bonded to the carrier 2 by, for example, polymer bonding using four small round (dot-shaped) bonding pads 3, 3', 3", and 3"'. These The first three bonding pads 3, 3', 3" are, for example, arranged to be equally spaced apart from each other along the periphery of the carrier 2, and the fourth bonding pad 3"' is located at the center of the carrier 2 ( See Figure 1a) and Figure 2a) i)). These bonding pads 3, 3', 3", 3'" only occupy a small space (about 2% of them) on the backside surface of the substrate 1, and are therefore covered on the backside surface of the substrate 1 (first ) In the case of (de)bonding damage or contamination at the bonding area, this will only result in a small loss of the area that can be used to provide the final product, that is, only a small part of the area of the substrate 1 is sacrificed due to the bonding. On the other hand, these bonding areas are sufficient to fix the substrate 1 during the subsequent vacuum processing process, and avoid warping of the substrate surface due to the stress and strain applied to the substrate 1 (now fixed by the carrier 1) by the vacuum processing process /Deformation/Bending.

隨後,將一個以上的第一真空處理製程施加至基板1的前側表面,例如將諸如光學濾波器層的光學塗層6沉積在前側表面上(參見步驟102)。在此之後,在基板1的背側表面仍然接合到載體2時,基板1的前側塗覆表面係在第二接合區域處例如藉由聚合物接合而再次地接合在第二載體4上(參見步驟103及圖2a)ii)。第二載體4係與第一載體2相同,亦即,形狀、尺寸及材料以及接合墊5、5'、5''、5'''的形狀、尺寸及位置係為相同的。第一接合區域及第二接合區域因此彼此相對地對準。在將基板1的前側表面接合在第二載體4上之後,基板1的背側表面被分離,亦即從第一載體2脫離(參見步驟104)。例如藉由將聚合物接合暴露於準分子雷射的UV光來實現該此脫離。UV光傳遞經過第一載體2,且在第一接合區域處與基板1的背側表面上的第一聚合物接合相互作用,但在第二接合區域處不與基板1的前側表面上的第二聚合物接合相互作用,因此使第二接合完整無缺,因為它被先前沉積在基板1前側表面上的光學濾波器(例如NIR帶通濾波器)層/塗層6阻擋。如果接合/脫離係例如替代性地藉由靜電力來實現,藉由將靜電接合/保持電荷反轉同時地執行從第一載體2脫離及接合到第二載體4上。要指出的是,在該製程/方法的此階段之期間,基板1應該總是接合到第一及第二載體2、4中的至少一者,以便確保在一個以上的第一真空處理製程之期間施加到基板1上的應力不會導致基板表面翹曲/變形/彎曲,如果基板1在尚未接合到第二載體4之情況下從第一載體2釋放(亦即,在暫時地未接合到載體時,且因此沒有固定到能夠承受由先前的第一真空處理製程施加的應力及應變的穩定化本體或支撐結構),會發生此情況。Subsequently, one or more first vacuum treatment processes are applied to the front side surface of the substrate 1, for example, an optical coating 6 such as an optical filter layer is deposited on the front side surface (see step 102). After that, while the back side surface of the substrate 1 is still bonded to the carrier 2, the front coated surface of the substrate 1 is bonded to the second carrier 4 again at the second bonding area, for example by polymer bonding (see Step 103 and Figure 2a)ii). The second carrier 4 is the same as the first carrier 2, that is, the shape, size and material, and the shape, size and position of the bonding pads 5, 5', 5", 5"' are the same. The first bonding area and the second bonding area are therefore aligned relative to each other. After the front side surface of the substrate 1 is bonded to the second carrier 4, the back side surface of the substrate 1 is separated, that is, detached from the first carrier 2 (see step 104). This detachment is achieved, for example, by exposing the polymer bond to UV light of an excimer laser. UV light passes through the first carrier 2 and interacts with the first polymer on the backside surface of the substrate 1 at the first bonding area, but does not interact with the first polymer on the front surface of the substrate 1 at the second bonding area. The two polymer bonds interact, thus leaving the second bond intact because it is blocked by the optical filter (eg NIR bandpass filter) layer/coating 6 previously deposited on the front surface of the substrate 1. If the bonding/disengaging system is achieved by, for example, an electrostatic force instead, the disengagement from the first carrier 2 and the bonding to the second carrier 4 are simultaneously performed by reversing the electrostatic bonding/holding charge. It should be pointed out that during this stage of the process/method, the substrate 1 should always be bonded to at least one of the first and second carriers 2, 4 in order to ensure that the The stress applied to the substrate 1 during the period will not cause the substrate surface to warp/deform/bend. If the substrate 1 is released from the first carrier 2 without being bonded to the second carrier 4 (that is, it is temporarily unbonded to the This happens when the carrier is not fixed to a stabilized body or support structure that can withstand the stress and strain applied by the previous first vacuum processing process).

在與第一載體2分離之後,使接合到第二載體4的基板1翻轉(亦即,旋轉180°到其另一側上;參見步驟105及圖2a)iii)。接著,將一個以上的第二真空處理製程施加至基板1中現在面向上的的背側表面/底側表面(參見步驟106),且將另一塗層7沉積到基板1的背側表面/底側表面上。這些第二真空處理製程可以與施加至基板1的前側表面/頂側表面的第一真空處理製程不同。最後,例如藉由再次地將聚合物接合暴露於準分子雷射上的UV光下,使基板1從第二載體4脫離。After being separated from the first carrier 2, the substrate 1 joined to the second carrier 4 is turned over (that is, rotated 180° to the other side thereof; see step 105 and FIG. 2a)iii). Then, one or more second vacuum treatment processes are applied to the back side surface/bottom side surface of the substrate 1 that is now facing upward (see step 106), and another coating layer 7 is deposited on the back side surface/bottom side surface of the substrate 1 On the bottom side surface. These second vacuum treatment processes may be different from the first vacuum treatment processes applied to the front side surface/top side surface of the substrate 1. Finally, for example, by exposing the polymer bond to UV light on the excimer laser again, the substrate 1 is detached from the second carrier 4.

應該指出的是,也可以在使基板1從第一載體2脫離/分離之前(亦即在步驟103及104之間),執行將基板1翻轉/反轉到另一側上。此具有的優點在於,基板既接合到第一載體2又接合到第二載體4,在翻轉/反轉到另一側上的同時提供額外的穩定性。It should be noted that it is also possible to perform flipping/reversing the substrate 1 to the other side before detaching/separating the substrate 1 from the first carrier 2 (that is, between steps 103 and 104). This has the advantage that the substrate is bonded to both the first carrier 2 and the second carrier 4, providing additional stability while being flipped/inverted onto the other side.

應當注意的是,藉由僅使用幾個(亦即三個到四個)小點狀的接合墊,脫離係簡化且更快地實現,且此外,使犧牲的總接合區域最小化,使得基板1的總表面積的很小部分藉由破壞性接合/脫離可能潛在地不能用於提供產品,此係為根據本發明提出的方法的重要優點。It should be noted that by using only a few (that is, three to four) small dot-shaped bonding pads, the release system is simplified and faster to achieve, and in addition, the sacrificed total bonding area is minimized, so that the substrate A small part of the total surface area of 1 may potentially not be used to provide products by destructive engagement/disengagement, which is an important advantage of the method proposed according to the present invention.

圖3a)係描繪用於處理基板的例示性系統的一系列頂視圖,其例示根據本發明之方法在處理基板的各種階段之期間基板及載體如何移動經過個別的系統模組。該系統包含載盒站8,在完成處理之前及之後,在載盒站8中儲存有複數個基板及(第一及第二)載體。三種不同的系統模組係繞著載盒站8配置且與載盒站8相鄰,分別係為組裝站9、翻轉站10及負載鎖11,它們各自都可以從載盒站8進入。在組裝站9中,將基板接合到(第一及第二)載體上且從(第一及第二)載體脫離。在翻轉站中,將基板從其前側/頂側處理位置翻轉180°至其背側/底側處理位置。載盒站8、組裝站9及翻轉站10係在正常/周遭大氣下工作。然而,為了施加真空處理製程,需要將基板移動至在真空下操作的處理模組13。為此,待被處理的基板係傳遞到負載鎖11中,在負載鎖11中泵抽空氣以實現真空。接著,將基板傳遞經過真空搬運器12,真空搬運器12包括諸如機器人(手臂)或輸送機的傳送/輸送手段,且進入至處理模組13中,在處理模組13中將一個以上的(第一及第二)真空處理製程施加至基板上。處理模組13可以由幾個模組組成,每個模組都適用於施加真空處理製程中的某個製程,諸如蝕刻、電漿清潔及真空塗覆,尤其是物理氣相沉積(PVD)、化學氣相沉積(CVD)、電漿增強化學氣相沉積(PECVD)及原子層沉積(ALD)。圖3b)係顯示待被接合到載體的基板的一系列相對應側視圖以及根據本發明之方法的步驟的相對應順序。Figure 3a) depicts a series of top views of an exemplary system for processing a substrate, which illustrates how the substrate and carrier move through individual system modules during various stages of processing the substrate according to the method of the present invention. The system includes a cassette station 8 in which a plurality of substrates and (first and second) carriers are stored before and after the processing is completed. Three different system modules are arranged around the box carrier station 8 and are adjacent to the box carrier station 8. They are respectively the assembly station 9, the turning station 10 and the load lock 11, and each of them can be accessed from the box carrier station 8. In the assembly station 9, the substrate is bonded to the (first and second) carrier and detached from the (first and second) carrier. In the turning station, the substrate is turned 180° from its front/top processing position to its back/bottom processing position. The box carrier station 8, the assembly station 9 and the turning station 10 work under normal/surrounding atmosphere. However, in order to apply a vacuum processing process, the substrate needs to be moved to the processing module 13 operating under vacuum. To this end, the substrate to be processed is transferred to the load lock 11, and air is pumped in the load lock 11 to achieve a vacuum. Next, the substrate is transferred through the vacuum carrier 12, which includes a conveying/conveying means such as a robot (arm) or a conveyor, and enters the processing module 13, where more than one ( The first and second) vacuum processing processes are applied to the substrate. The processing module 13 can be composed of several modules, and each module is suitable for applying a certain process in the vacuum processing process, such as etching, plasma cleaning and vacuum coating, especially physical vapor deposition (PVD), Chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD). Figure 3b) shows a series of corresponding side views of the substrate to be bonded to the carrier and the corresponding sequence of the steps of the method according to the invention.

最初,將基板及第一載體從載盒站8載入到組裝站9中(參見圖3a)i)中的兩個向下箭頭),在組裝站9中將基板的背側表面接合到第一載體上(參見步驟201及圖3b)i))。接著,將固定至第一載體的基板傳遞經過負載鎖11,且由真空搬運器12輸送到處理模組13中(參見圖3a)i)中的向左箭頭),在處理模組13中將頂部塗層沉積到基板的前側表面/頂側表面(參見步驟202)。在此之後,將單側塗覆的基板返回到組裝站9(參見圖3a)ii)中的向右箭頭)。將第二載體從載盒站8載入到組裝站9中(參見圖3a)ii)中的向下箭頭)及步驟203的第一動作)。現在,將基板的前側表面接合到第二載體上(參見步驟203的第二動作及圖3b)ii)),在此之後,使基板的背側表面從第一載體脫離(參見步驟203的第三動作及圖3b)iii))。接下來,將第一載體返回到載盒站8(參見圖3a)iii)中的向上短箭頭),且將固定至第二載體的基板傳遞到翻轉站10(參見圖3a)iii)中的向上長箭頭),在翻轉站10中基板從其背側表面翻轉到其前側表面,亦即翻轉180°(參見步驟204及圖3b)iv))。在此之後,將固定至第二個載體的基板傳遞經過負載鎖11,且由真空搬運器12輸送到處理模組13中(參見圖3a)iii)中的向左箭頭),在處理模組13中將底部塗層沉積到基板的背側表面/底側表面上(參見步驟205)。接著,將雙面塗覆的基板返回到組裝站9(參見圖3a)iv)中的向右箭頭),在組裝站9中,使基板的前側表面從第二載體脫離(參見步驟206的第一動作及圖3b)v))。最後,將第二載體及雙面塗覆的基板返回到載盒站8(參見圖3a)iv)中的兩個向上箭頭及步驟206的第二及第三動作)。Initially, the substrate and the first carrier are loaded from the cassette station 8 to the assembly station 9 (see Figure 3a) i) two downward arrows), in the assembly station 9, the backside surface of the substrate is joined to the first On a carrier (see step 201 and Figure 3b) i)). Then, the substrate fixed to the first carrier is passed through the load lock 11, and is transported by the vacuum carrier 12 to the processing module 13 (see the left arrow in Figure 3a) i)), and the processing module 13 The top coating is deposited on the front side surface/top side surface of the substrate (see step 202). After this, the substrate coated on one side is returned to the assembly station 9 (see the right arrow in Fig. 3a) ii)). Load the second carrier from the cassette station 8 to the assembly station 9 (see the downward arrow in Fig. 3a) ii) and the first action of step 203). Now, the front side surface of the substrate is joined to the second carrier (see the second action of step 203 and Figure 3b) ii)), after which, the back side surface of the substrate is detached from the first carrier (see step 203, the first Three actions and Figure 3b)iii)). Next, the first carrier is returned to the box carrier station 8 (see Figure 3a) iii) in the upward short arrow), and the substrate fixed to the second carrier is transferred to the turning station 10 (see Figure 3a) iii) in Upward long arrow), in the turning station 10, the substrate is turned from its back side surface to its front side surface, that is, it is turned over 180° (see step 204 and FIG. 3b) iv)). After that, the substrate fixed to the second carrier is passed through the load lock 11, and is transported by the vacuum carrier 12 to the processing module 13 (see the left arrow in Figure 3a) iii)), in the processing module In 13 the bottom coating is deposited on the backside surface/bottom side surface of the substrate (see step 205). Next, return the double-sided coated substrate to the assembling station 9 (see Figure 3a) iv) in the right arrow). In the assembling station 9, the front surface of the substrate is detached from the second carrier (see step 206) One action and Figure 3b)v)). Finally, the second carrier and the double-sided coated substrate are returned to the two upward arrows in the cassette station 8 (see FIG. 3a) iv) and the second and third actions of step 206).

圖3b)係描繪用於處理基板的替代例示性系統的一系列頂視圖,其示例根據本發明之方法在處理基板的各種階段之期間基板及載體如何移動經過個別的系統模組。替代性系統包含相同的模組,但以不同的方式互連。此處,載盒站8僅附接至負載鎖11,且負載鎖11、組裝站9、翻轉站10及處理模組13都繞著真空搬運器12配置且與真空搬運器12相鄰。個別的模組的功能保持不變。然而,在真空下執行接合及脫離以及將基板翻轉/反轉到其另一側上。圖4b)係顯示接合到載體的基板的一系列相同的相對應側視圖,以及如圖3b)所示的根據本發明之方法的步驟的相對應順序。Figure 3b) depicts a series of top views of an alternative exemplary system for processing substrates, illustrating how substrates and carriers move through individual system modules during various stages of substrate processing according to the method of the present invention. Alternative systems contain the same modules but are interconnected in different ways. Here, the box carrier station 8 is only attached to the load lock 11, and the load lock 11, the assembly station 9, the turning station 10 and the processing module 13 are all arranged around and adjacent to the vacuum carrier 12. The functions of the individual modules remain unchanged. However, the bonding and disengagement and the inversion/inversion of the substrate onto the other side thereof are performed under vacuum. Figure 4b) shows a series of identical corresponding side views of the substrate bonded to the carrier, and the corresponding sequence of the steps of the method according to the invention as shown in Figure 3b).

最初,將基板及第一載體從載盒站8經由負載鎖11載入,且由真空搬運器12輸送到組裝站9中(參見圖4a)i)中的兩個向左長箭頭)),在組裝站9中將基板的背側表面接合到第一載體上(參見步驟201及圖4b)i)。接著,藉由真空搬運器12將固定至第一載體的基板輸送到處理模組13中(參見圖4a)i)中的向左短箭頭),在處理模組13中,將頂部塗層沉積在基板的前側表面/頂側表面上(參見步驟202)。接著,將單面塗覆的基板返回到組裝站9(參見圖4a)ii)中的向右箭頭)。藉由真空搬運器12將第二載體輸送到組裝站9中(參見圖4a)ii)中的向下箭頭及步驟203的第一動作)。現在,將基板的前側表面接合到第二載體上(參見步驟203的第二動作及圖4b)ii)),在此之後,使基板的背側表面從第一載體脫離(參見步驟203的第三動作及圖4b)iii))。接下來,將第一載體輸送到真空搬運器中(參見圖4a)iii)中的向上短箭頭),且藉由真空搬運器12將固定至第二載體的基板輸送到翻轉站10中(參見圖4a)iii)中的向上長箭頭),在翻轉站10中將基板從其背側表面翻轉到其前側表面,亦即翻轉180°(參見步驟204及圖4b)iv))。在此之後,藉由真空搬運器12將固定至第二載體的基板輸送到處理模組13中(參見圖4a)iii)中的向左箭頭),在處理模組13中,將底部塗層沉積在基板的背側表面/底側表面上(參見步驟205)。在此之後,將雙面塗覆的基板返回到組裝站9(參見圖4a)iv)中的向右短箭頭),在組裝站9中,使基板的前側表面從第二載體脫離(參見步驟206的第一動作及圖4b)v))。最後,將第二載體及雙面塗覆的基板經由負載鎖11返回到載盒站8(參見圖4a)iv)中的兩個向右長箭頭及步驟206的第二及第三動作)。Initially, the substrate and the first carrier are loaded from the cassette station 8 via the load lock 11, and transported by the vacuum carrier 12 to the assembly station 9 (see the two long left arrows in Fig. 4a) i))), The backside surface of the substrate is bonded to the first carrier in the assembly station 9 (see step 201 and FIG. 4b) i). Then, the substrate fixed to the first carrier is transported to the processing module 13 by the vacuum carrier 12 (see Figure 4a) i) the leftward short arrow), in the processing module 13, the top coating is deposited On the front side surface/top side surface of the substrate (see step 202). Next, the single-sided coated substrate is returned to the assembly station 9 (see the right arrow in Figure 4a) ii)). The second carrier is transported to the assembly station 9 by the vacuum carrier 12 (see FIG. 4a) and the downward arrow in ii) and the first action of step 203). Now, the front side surface of the substrate is bonded to the second carrier (see the second action of step 203 and Figure 4b) ii)), after which, the back side surface of the substrate is detached from the first carrier (see step 203, the first Three actions and Figure 4b)iii)). Next, the first carrier is transported to the vacuum carrier (see the short upward arrow in Figure 4a) iii)), and the substrate fixed to the second carrier is transported to the turning station 10 by the vacuum carrier 12 (see The upward long arrow in Fig. 4a) iii)), in the reversing station 10, the substrate is reversed from its back side surface to its front side surface, that is, 180° (see step 204 and Fig. 4b) iv)). After that, the substrate fixed to the second carrier is transported to the processing module 13 by the vacuum carrier 12 (see the left arrow in Figure 4a) iii)). In the processing module 13, the bottom coating Deposited on the backside surface/bottom surface of the substrate (see step 205). After this, the double-sided coated substrate is returned to the assembling station 9 (see Figure 4a) iv) in the right short arrow), in the assembling station 9, the front side surface of the substrate is detached from the second carrier (see step The first action of 206 and Figure 4b)v)). Finally, the second carrier and the double-sided coated substrate are returned via the load lock 11 to the two long rightward arrows in the cassette station 8 (see FIG. 4a) iv) and the second and third actions of step 206).

再次指出的是,在結合圖3及圖4敘述的順序中,在將基板接合到第一及第二載體兩者上的同時,可以交替地執行翻轉/反轉基板的步驟,以便相較於將基板僅接合到兩個載體中之一者且同時翻轉,實現增加的支撐。作為另一個替代例,在將基板接合到第二載體上且使基板從第一載體脫離之前,可以將接合到第一載體的基板翻轉/反轉。It should be pointed out again that in the sequence described in conjunction with FIG. 3 and FIG. 4, while the substrate is bonded to both the first and second carriers, the steps of flipping/reversing the substrate can be performed alternately, so as to compare with The substrate is joined to only one of the two carriers and turned over at the same time to achieve increased support. As another alternative, before bonding the substrate to the second carrier and detaching the substrate from the first carrier, the substrate bonded to the first carrier may be inverted/reversed.

1:基板 2:第一載體、載體1 3:在載體1上的接合墊(暫時接合) 3':在載體1上的接合墊(暫時接合) 3'':在載體1上的接合墊(暫時接合) 3''':在載體1上的接合墊(暫時接合) 4:第二載體、載體2 5:在載體2上的接合墊(暫時接合) 5':在載體2上的接合墊(暫時接合) 5'':在載體2上的接合墊(暫時接合) 5''':在載體2上的接合墊(暫時接合) 6:前側塗覆/頂側塗覆 7:背側塗覆/底側塗覆 8:載盒站 9:組裝站 10:翻轉站 11:負載鎖 12:真空搬運器 13:處理模組1: substrate 2: The first carrier, carrier 1 3: Bonding pad on carrier 1 (temporary bonding) 3': Bonding pad on carrier 1 (temporary bonding) 3'': Bonding pad on carrier 1 (temporary bonding) 3''': Bonding pad on carrier 1 (temporary bonding) 4: The second carrier, carrier 2 5: Bonding pad on carrier 2 (temporary bonding) 5': Bonding pad on carrier 2 (temporary bonding) 5'': Bonding pad on carrier 2 (temporary bonding) 5''': Bonding pad on carrier 2 (temporary bonding) 6: Front side coating/top side coating 7: Back side coating/bottom side coating 8: Box carrier station 9: Assembly station 10: Flip station 11: Load lock 12: Vacuum carrier 13: Processing module

以下藉由非限制性的具體實施例且參照附圖來進一步說明本發明,附圖係顯示以下內容: 圖1a)係為根據本發明的例示性載體的頂視圖,該載體具有四個點狀接合墊的例示性配置, 圖1b)係為根據本發明的例示性載體的頂視圖,該載體具有三個條狀接合墊的例示性配置,及 圖1c)係為根據本發明的例示性載體的頂視圖,該載體具有一個中心點狀接合墊及三個周向配置的弧形接合墊的例示性配置; 圖2a)係為在根據本發明之方法的三個例示性階段之期間在前側表面及背側表面處接合到載體的例示性基板的一系列側視圖,及 圖2b)係為根據本發明之方法的步驟的例示性順序; 圖3a)係為用於處理基板的例示性系統的一系列頂視圖,其示例根據本發明之方法在四個例示性階段之期間基板及載體如何移動經過系統模組,及 圖3b)係為接合到載體的基板的一系列相對應側視圖以及根據本發明之方法的步驟的相對應順序;及 圖4a)係為用於處理基板的替代例示性系統的一系列頂視圖,其示例根據本發明之方法在四個例示性階段之期間基板及載體如何移動經過系統模組,及 圖4b)係為接合到載體的基板的一系列相對應側視圖以及根據本發明之方法的步驟的相對應順序。 在附圖中,相同的元件符號係表示相同的部件。Hereinafter, the present invention will be further explained by non-limiting specific embodiments and with reference to the accompanying drawings, which show the following content: Figure 1a) is a top view of an exemplary carrier according to the present invention, the carrier having an exemplary configuration of four dot-shaped bonding pads, Figure 1b) is a top view of an exemplary carrier according to the present invention, the carrier having an exemplary configuration of three strip bonding pads, and Figure 1c) is a top view of an exemplary carrier according to the present invention, the carrier having an exemplary configuration of a central point-shaped bonding pad and three circumferentially arranged arc-shaped bonding pads; Figure 2a) is a series of side views of an exemplary substrate bonded to a carrier at the front side surface and the back side surface during the three exemplary stages of the method according to the present invention, and Figure 2b) is an exemplary sequence of steps of the method according to the present invention; Figure 3a) is a series of top views of an exemplary system for processing a substrate, which illustrates how the substrate and carrier move through the system module during the four exemplary stages of the method according to the present invention, and Figure 3b) is a series of corresponding side views of the substrate bonded to the carrier and the corresponding sequence of the steps of the method according to the present invention; and Figure 4a) is a series of top views of an alternative exemplary system for processing substrates, which illustrates how the substrate and carrier move through the system module during the four exemplary stages of the method according to the present invention, and Figure 4b) is a series of corresponding side views of the substrate bonded to the carrier and the corresponding sequence of the steps of the method according to the present invention. In the drawings, the same reference numerals denote the same components.

1:基板 1: substrate

2:第一載體、載體1 2: The first carrier, carrier 1

3:在載體1上的接合墊(暫時接合) 3: Bonding pad on carrier 1 (temporary bonding)

3":在載體1上的接合墊(暫時接合) 3": Bonding pad on carrier 1 (temporary bonding)

3''':在載體1上的接合墊(暫時接合) 3''': Bonding pad on carrier 1 (temporary bonding)

4:第二載體、載體2 4: The second carrier, carrier 2

5:在載體2上的接合墊(暫時接合) 5: Bonding pad on carrier 2 (temporary bonding)

5":在載體2上的接合墊(暫時接合) 5": Bonding pad on carrier 2 (temporary bonding)

5''':在載體2上的接合墊(暫時接合) 5''': Bonding pad on carrier 2 (temporary bonding)

6:前側塗覆/頂側塗覆 6: Front side coating/top side coating

7:背側塗覆/底側塗覆 7: Back side coating/bottom side coating

Claims (20)

一種用於處理基板(1)的方法,該基板(1)具有一前側表面及一背側表面,該方法包含以下步驟: 在一個以上的第一接合區域處將該基板(1)的背側表面接合到第一載體(2); 將一個以上的第一真空處理製程施加至該基板(1)的前側表面;及 使該第一載體(2)從該基板(1)的背側表面脫離, 其中該一個以上的第一接合區域僅包含該背側表面的一部分,該部分係小於該背側表面的50%。A method for processing a substrate (1), the substrate (1) has a front side surface and a back side surface, the method includes the following steps: Bonding the backside surface of the substrate (1) to the first carrier (2) at more than one first bonding area; Applying more than one first vacuum treatment process to the front surface of the substrate (1); and Detach the first carrier (2) from the back surface of the substrate (1), The one or more first joining regions only include a part of the back surface, and the part is less than 50% of the back surface. 如請求項1之方法,更包含以下步驟: 在施加該一個以上的第一真空處理製程的步驟之後,且在使該第一載體(2)脫離的步驟之前或基本上與使該第一載體(2)脫離的步驟同時地,在一個以上的第二接合區域處將該基板(1)的前側表面接合到第二載體(4); 在使該第一載體(2)脫離的步驟之後,將一個以上的第二真空處理製程施加至該基板(1)的背側表面;及 使該第二載體(4)從該基板(1)的前側表面脫離, 其中該一個以上的第二接合區域僅包含該前側表面的一部分,該部分係小於該前側表面的50%。For example, the method of request item 1, further includes the following steps: After the step of applying the one or more first vacuum treatment processes, and before the step of detaching the first carrier (2) or substantially simultaneously with the step of detaching the first carrier (2), at more than one The front side surface of the substrate (1) is bonded to the second carrier (4) at the second bonding area of ??; After the step of detaching the first carrier (2), applying more than one second vacuum treatment process to the backside surface of the substrate (1); and Detach the second carrier (4) from the front surface of the substrate (1), The one or more second joining regions only include a part of the front side surface, and the part is less than 50% of the front side surface. 如請求項1或2之方法,更包含以下步驟:在施加該一個以上的第一真空處理製程的步驟之後,且在施加該一個以上的第二真空處理製程的步驟之前,將該基板(1)從一前側處理位置翻轉到一背側處理位置。For example, the method of claim 1 or 2, further comprising the following steps: after the step of applying the one or more first vacuum treatment processes, and before the step of applying the one or more second vacuum treatment processes, the substrate (1 ) Flip from a front side processing position to a back side processing position. 如請求項1至3中任一項之方法,其中滿足以下條件中的至少一者: 該一個以上的第一接合區域的總面積係小於該基板(1)的背側表面的總面積的10%,尤其是小於5%,更尤其是小於2%; 該一個以上的第二接合區域的總面積係小於該基板(1)的前側表面的總面積的10%,尤其是小於5%,更尤其是小於2%; 該一個以上的第一及/或第二接合區域係為點狀或線狀; 利用三個以上的第一接合區域; 利用三個以上的第二接合區域; 該等第一接合區域中的一者或多者係位於該基板(1)的背側表面的周邊,且尤其是該等第一接合區域中的至少一者係位於該基板(1)的背側表面的一中央區域; 該等第二接合區域中的一者或多者係位於該基板(1)的前側表面的周邊,且尤其是該等第二接合區域中的至少一者係位於該基板(1)的前側表面的一中央區域; 該一個以上的第二接合區域係定位成與該一個以上的第一接合區域相對,且尤其是該一個以上的第二接合區域係與該一個以上的第一接合區域對準; 該一個以上的第一及/或第二接合區域藉由接合及/或脫離而不能使用,以提供由施加該一個以上的第一及/或第二真空處理製程所產生的產品。Such as the method of any one of claims 1 to 3, wherein at least one of the following conditions is met: The total area of the one or more first bonding regions is less than 10% of the total area of the backside surface of the substrate (1), especially less than 5%, more especially less than 2%; The total area of the one or more second bonding regions is less than 10% of the total area of the front side surface of the substrate (1), especially less than 5%, more especially less than 2%; The one or more first and/or second joining areas are dotted or linear; Use more than three first joining areas; Use more than three second joining areas; One or more of the first bonding regions are located on the periphery of the backside surface of the substrate (1), and in particular, at least one of the first bonding regions is located on the back of the substrate (1) A central area on the side surface; One or more of the second bonding areas are located on the periphery of the front surface of the substrate (1), and in particular, at least one of the second bonding areas is located on the front surface of the substrate (1) A central area of The one or more second bonding areas are positioned opposite to the one or more first bonding areas, and in particular, the one or more second bonding areas are aligned with the one or more first bonding areas; The one or more first and/or second bonding areas cannot be used due to bonding and/or disengagement to provide products produced by applying the one or more first and/or second vacuum treatment processes. 如請求項1至4中任一項之方法,其中藉由凡得瓦力、靜電力及施加一聚合物接合材料中的至少一者來實現與該第一及/或第二載體(2、4)的接合,尤其是以接合墊(3、3'、3''、3''')及/或條帶(3、3'、3'')之形式。The method according to any one of claims 1 to 4, wherein at least one of Van der Waals force, electrostatic force and application of a polymer bonding material is used to achieve the interaction with the first and/or second carrier (2, 4) The bonding, especially in the form of bonding pads (3, 3', 3", 3"') and/or strips (3, 3', 3"). 如請求項5之方法,其中該聚合物接合材料包含下述中的至少一者:有機材料、矽樹脂、聚酰胺、包含羧基端基的材料,尤其是雙成分材料的多成分材料,該多成分材料包含尤其是底漆的光敏物質。The method of claim 5, wherein the polymer bonding material comprises at least one of the following: organic materials, silicone resins, polyamides, materials containing carboxyl end groups, especially multi-component materials of two-component materials, The component material contains photosensitive substances, especially primers. 如請求項5之方法,其中藉由具有方向依存性接合特性的一方向接合結構來實現與該第一及/或第二載體(2、4)的接合,尤其是在該一個以上的第一或第二接合區域處施加時,相較於在平行於該基板(1)的前側表面或背側表面之方向上,在垂直於該基板(1)的前側表面或背側表面之方向上提供更大的接合力。Such as the method of claim 5, wherein the bonding with the first and/or second carrier (2, 4) is achieved by a one-directional bonding structure having a direction-dependent bonding characteristic, especially in the one or more first Or when applied at the second bonding area, compared to the direction parallel to the front side surface or back side surface of the substrate (1), it is provided in the direction perpendicular to the front side surface or back side surface of the substrate (1) Greater joining force. 如請求項1至7中任一項之方法,其中藉由下述中的至少一者來實現使該第一及/或第二載體(2、4)脫離:施加一機械分離力或一化學溶劑至該第一及/或第二接合區域及使該第一及/或第二接合區域暴露於光及/或熱,該光尤其是雷射光、更尤其是一準分子雷射的UV光。The method according to any one of claims 1 to 7, wherein the detachment of the first and/or second carrier (2, 4) is achieved by at least one of the following: applying a mechanical separation force or a chemical Solvent to the first and/or second bonding area and exposing the first and/or second bonding area to light and/or heat, the light is particularly laser light, more particularly UV light of an excimer laser . 如請求項8之方法,其中為了使該第一載體(2)脫離,尤其是經由該第一載體(2)朝向該基板(1)的背側表面施加該雷射光,及/或其中為了使該第二載體(4)脫離,尤其是經由該第二載體(4)朝向該基板(1)的前側表面施加該雷射光。Such as the method of claim 8, wherein in order to detach the first carrier (2), the laser light is applied to the backside surface of the substrate (1) through the first carrier (2), and/or in order to make The second carrier (4) is detached, in particular, the laser light is applied toward the front surface of the substrate (1) via the second carrier (4). 如請求項1至9中任一項之方法,其中該基板(1)的前側表面係塗覆有一光學濾波器層,尤其是一近紅外線濾波器層,尤其是其中該光學濾波器層係為施加該一個以上的第一真空處理製程的結果。The method according to any one of claims 1 to 9, wherein the front surface of the substrate (1) is coated with an optical filter layer, especially a near-infrared filter layer, especially wherein the optical filter layer is The result of applying the one or more first vacuum treatment processes. 如請求項1至10中任一項之方法,其中該一個以上的第一及/或第二真空處理製程中的至少一者包含下述中的至少一者:蝕刻、電漿清潔及真空塗覆,尤其是物理氣相沉積、化學氣相沉積、電漿增強化學氣相沉積及原子層沉積,更尤其是在該基板(1)的前側表面及/或背側表面上沉積一光學濾波器層、沉積一金屬化層及沉積一介電層中的至少一者。The method according to any one of claims 1 to 10, wherein at least one of the one or more first and/or second vacuum treatment processes includes at least one of the following: etching, plasma cleaning, and vacuum coating Covering, especially physical vapor deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition and atomic layer deposition, more especially the deposition of an optical filter on the front surface and/or back surface of the substrate (1) At least one of layer, depositing a metallization layer, and depositing a dielectric layer. 如請求項1至11中任一項之方法,其中滿足以下條件中的至少一者: 該基板(1)具有小於500μm,尤其是小於250μm的厚度; 該第一及/或第二載體(2、4)具有大於500μm,尤其是大於1mm的厚度; 該基板(1)具有至少100mm,尤其是至少200mm的橫向延伸範圍。Such as the method of any one of claims 1 to 11, wherein at least one of the following conditions is met: The substrate (1) has a thickness of less than 500 μm, especially less than 250 μm; The first and/or second carrier (2, 4) has a thickness greater than 500 μm, especially greater than 1 mm; The substrate (1) has a lateral extension of at least 100 mm, especially at least 200 mm. 如請求項1至12中任一項之方法,其中該第一及/或第二載體(2、4)適於作用成一穩定化本體或支撐結構,尤其是剛性的。The method according to any one of claims 1 to 12, wherein the first and/or second carrier (2, 4) is suitable for acting as a stabilizing body or supporting structure, especially rigid. 如請求項1至13中任一項之方法,其中該第一及/或第二載體(2、4)具有一平坦或彎曲表面。The method according to any one of claims 1 to 13, wherein the first and/or second carrier (2, 4) has a flat or curved surface. 如請求項1至14中任一項之方法,其中該基板(1)的熱膨脹係數係與該第一及/或第二載體(2、4)的熱膨脹係數基本上相同,且其中尤其是,該基板(1)係由與該第一及/或第二載體(2、4)相同的材料製成。The method according to any one of claims 1 to 14, wherein the coefficient of thermal expansion of the substrate (1) is substantially the same as that of the first and/or second carrier (2, 4), and in particular, The substrate (1) is made of the same material as the first and/or second carrier (2, 4). 如請求項1至15中任一項之方法,其中該基板(1)係為一玻璃或半導體晶圓。The method according to any one of claims 1 to 15, wherein the substrate (1) is a glass or semiconductor wafer. 如請求項1至16中任一項之方法,其中該第一及/或第二載體(2、4)係由玻璃、陶瓷材料、金屬或金屬化材料製成。The method according to any one of claims 1 to 16, wherein the first and/or second carrier (2, 4) is made of glass, ceramic material, metal or metalized material. 如請求項1至17中任一項之方法,其中將請求項1的步驟及請求項2的步驟連續地重複一次或多次。Such as the method of any one of claims 1 to 17, wherein the steps of claim 1 and the steps of claim 2 are continuously repeated one or more times. 如請求項1至18中任一項之方法,其中藉由下述來實現接合:熱致動黏著劑、壓力致動黏著劑、溶劑致動黏著劑、UV致動黏著劑、電漿致動黏著劑、高壓放電致動黏著劑或其任意組合。The method according to any one of claims 1 to 18, wherein the bonding is achieved by the following: heat-actuated adhesive, pressure-actuated adhesive, solvent-actuated adhesive, UV-actuated adhesive, plasma-actuated Adhesives, high-voltage discharge activated adhesives, or any combination thereof. 一種用於製造一真空塗覆基板(1)的方法,以提供諸如扇出型基板的用於先進封裝技術的光學、光電及半導體裝置、顯示器、微顯示器、裝置載體系統,該方法包含如請求項1至19中任一項之用於處理基板(1)的方法。A method for manufacturing a vacuum-coated substrate (1) to provide optical, optoelectronic, and semiconductor devices, displays, microdisplays, and device carrier systems for advanced packaging technologies such as fan-out substrates, the method includes as requested The method for processing a substrate (1) according to any one of items 1 to 19.
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