TW201822267A - Wafer processing method capable of easily transferring a wafer from a protective tape for grinding to another adhesive tape - Google Patents
Wafer processing method capable of easily transferring a wafer from a protective tape for grinding to another adhesive tape Download PDFInfo
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- TW201822267A TW201822267A TW106134890A TW106134890A TW201822267A TW 201822267 A TW201822267 A TW 201822267A TW 106134890 A TW106134890 A TW 106134890A TW 106134890 A TW106134890 A TW 106134890A TW 201822267 A TW201822267 A TW 201822267A
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- Prior art keywords
- grinding
- wafer
- tape
- protective tape
- adhesive tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
[0001] 本發明是有關在外周緣具有倒角部的晶圓的加工方法。[0001] The present invention relates to a method for processing a wafer having a chamfered portion on the outer periphery.
[0002] IC、LSI等的裝置藉由分割預定線來被區劃而形成於表面的晶圓是藉由切割裝置來分割成各個的裝置，利用於各種電子機器。晶圓是在被分割成各個的裝置之前，背面會被研削而形成預定的厚度。 [0003] 在晶圓的外周緣，為了防止在製造過程中產生缺口或破裂，而被施以圓弧狀的倒角。為此，一旦將晶圓的背面研削而變薄，則被倒角的面的一部分會殘存，晶圓的周緣會如刀般尖銳化，會有處理變危險且容易產生缺口的問題。於是，在將晶圓的背面研削之前，從晶圓的表面側將倒角部切削而除去的技術被提案（例如參照專利文獻1）。 [0004] 具體而言，一面將切削刀從晶圓的表面切入至外周緣，一面使晶圓旋轉，在外周緣形成圓形的切削溝，藉由此切削溝，沿著晶圓的外周緣，在表面側形成階差。藉由如此形成階差，即使從背面側研削晶圓，還是可消除在表面側的外周緣尖銳化的部分。 [先前技術文獻] [專利文獻] [0005] [專利文獻1]日本特開2012-43825號公報[0002] Wafers formed on the surface of devices such as ICs and LSIs by being divided by a predetermined division line are divided into individual devices by a dicing device and used in various electronic devices. Before the wafer is divided into individual devices, the back surface is ground to a predetermined thickness. [0003] An arc-shaped chamfer is applied to the outer periphery of the wafer in order to prevent chipping or cracking during the manufacturing process. For this reason, once the back surface of the wafer is ground and thinned, a part of the chamfered surface will remain, and the periphery of the wafer will be sharpened like a knife, which will cause problems such as dangerous processing and easy to generate chipping. Then, before grinding the back surface of the wafer, a technique of cutting and removing the chamfered portion from the front surface side of the wafer is proposed (for example, refer to Patent Document 1). [0004] Specifically, while cutting the cutter from the surface of the wafer to the outer periphery, the wafer is rotated to form a circular cutting groove at the outer periphery, and the groove is then cut along the outer periphery of the wafer. A step is formed on the surface side. By forming the step in this way, even if the wafer is ground from the back side, the sharpened portion on the outer peripheral edge of the front side can be eliminated. [Prior Art Document] [Patent Document] [0005] [Patent Document 1] Japanese Patent Laid-Open No. 2012-43825
（發明所欲解決的課題） [0006] 如上述般倒角部被除去後，為了進行背面研削，在晶圓的表面側貼著研削用保護膠帶時，貼著比晶圓的表面大的保護膠帶之後，沿著成為階差的外側之晶圓的外周緣來切斷研削用保護膠帶。藉由此切斷，如圖7所示般，研削用保護膠帶（研削膠帶）T的外周側會進入晶圓W的切削溝Wd，或貼著於切削溝Wd的形成面。此情況，一旦從背面Wb側來研削晶圓W而圓弧狀的倒角部Wc被研削，則由於階差的內周緣的部分會成為晶圓W的外周緣，因此如圖8所示般，形成研削用保護膠帶T會伸出至晶圓W的外周緣側的狀態。在此狀態下，為了之後的工程，若所欲在晶圓W的背面Wb側將比晶圓W的背面Wb大的DAF膠帶或擴張膠帶等的黏著膠帶Tp貼著轉印，則會有在該黏著層貼上伸出的研削用保護膠帶T而不能轉印的問題。 [0007] 本發明是有鑑於如此的點而研發者，以提供一種可容易將晶圓從研削用保護膠帶轉印至別的黏著膠帶之晶圓的加工方法為目的之一。 （用以解決課題的手段） [0008] 本發明之一形態的晶圓的加工方法，係在外周緣具有倒角部，在表面形成有複數的裝置之晶圓的加工方法，其特徵係具備： 研削用保護膠帶貼著步驟，其係在表面側貼著研削用保護膠帶； 修剪步驟，其係一面使切削刀從研削用保護膠帶側切入至晶圓的外周緣，一面使晶圓旋轉，將研削用保護膠帶及晶圓表面側的倒角部切削除去成圓形； 研削步驟，其係在實施修剪步驟之後，將研削用保護膠帶側保持於研削裝置的吸盤，將晶圓的背面研削；及 轉印步驟，其係在實施研削步驟之後，在研削後的晶圓背面貼著別的黏著膠帶，將研削用保護膠帶剝離而進行轉印。 [0009] 若根據此方法，則將研削用保護膠帶貼著之後，將如此的研削用保護膠帶與晶圓表面側的倒角部在修剪步驟一起切削除去。因此，藉由在修剪步驟的切削，可使被形成於晶圓的階差的內周緣與研削用保護膠帶的外周緣一致。藉此，在研削步驟後的轉印步驟，可迴避研削用保護膠帶從晶圓的外周緣伸出。此結果，在轉印步驟貼著別的黏著膠帶時，可防止在黏著膠帶貼上研削用保護膠帶，可容易將研削用保護膠帶剝離而進行轉印。 [發明的效果] [0010] 若根據本發明，則由於在修剪步驟前貼著研削用保護膠帶之後，修剪研削用保護膠帶及晶圓表面側的倒角部，因此可容易將晶圓從研削用保護膠帶轉印至別的黏著膠帶。(Problems to be Solved by the Invention) [0006] After the chamfered portion is removed as described above, in order to perform back surface grinding, when a protective tape for grinding is attached to the surface side of the wafer, a protection larger than the surface of the wafer is attached. After the tape, the protective tape for grinding is cut along the outer periphery of the wafer which is the outer side of the step. As a result of this cutting, as shown in FIG. 7, the outer peripheral side of the grinding protective tape (grinding tape) T enters the cutting groove Wd of the wafer W or adheres to the formation surface of the cutting groove Wd. In this case, once the wafer W is ground from the back surface Wb side and the arc-shaped chamfered portion Wc is ground, the inner peripheral edge portion of the step becomes the outer peripheral edge of the wafer W, so as shown in FIG. 8 A state where the protective tape T for grinding is extended to the outer peripheral side of the wafer W is formed. In this state, if the DAF tape or expansion tape Tp, which is larger than the back surface Wb of the wafer W, is to be transferred on the back surface Wb side of the wafer W for subsequent processes, This adhesive layer has a problem that the protruding protective tape T is stuck and cannot be transferred. [0007] The present invention has been developed in view of such a point, and it is one of the objects of the present invention to provide a processing method for a wafer that can easily transfer a wafer from a protective tape for grinding to another adhesive tape. (Means for Solving the Problems) [0008] A method of processing a wafer according to one aspect of the present invention is a method of processing a wafer having a chamfered portion on an outer peripheral edge and a plurality of devices formed on a surface thereof. The method includes: The step of applying a protective tape for grinding is to attach the protective tape for grinding on the surface side; The trimming step involves cutting the cutter from the side of the protective tape for grinding to the outer periphery of the wafer while rotating the wafer while rotating The protective tape for grinding and the chamfered portion on the surface side of the wafer are cut and removed into a circle; The grinding step is to hold the side of the protective tape for grinding to the suction cup of the grinding device after the trimming step, and grind the back of the wafer; And the transfer step, after the grinding step is performed, another adhesive tape is attached to the back surface of the wafer after grinding, and the protective tape for grinding is peeled off and transferred. [0009] According to this method, after the grinding protective tape is adhered, such a grinding protective tape is cut and removed together with the chamfered portion on the wafer surface side in a trimming step. Therefore, by cutting in the trimming step, the inner peripheral edge of the step formed on the wafer can be made to coincide with the outer peripheral edge of the protective tape for grinding. Thereby, in the transfer step after the grinding step, it is possible to avoid the grinding protective tape from protruding from the outer periphery of the wafer. As a result, when another adhesive tape is stuck on the transfer step, the protective tape for grinding can be prevented from being applied to the adhesive tape, and the protective tape for grinding can be easily peeled off and transferred. [Effects of the Invention] [0010] According to the present invention, the grinding protective tape and the chamfered portion on the wafer surface side are trimmed after the grinding protective tape is attached before the trimming step, so that the wafer can be easily ground from grinding. Use protective tape to transfer to another adhesive tape.
[0012] 以下，參照附圖來說明有關本實施形態的晶圓的加工方法。圖1是表示研削用保護膠帶貼著步驟，圖2及圖3是表示修剪步驟，圖4及圖5是表示研削步驟，圖6是表示轉印步驟的說明圖。另外，上述的各圖所示的步驟只不過是其一例，並非限於此構成者。 [0013] 如圖1所示般，首先，實施將研削用保護膠帶T（以下稱為研削膠帶T）貼著於晶圓W的表面Wa之研削用保護膠帶貼著步驟。在晶圓W的表面Wa是形成有膜層D，在此膜層D是藉由成為格子狀之未圖示的分割預定線來被區劃的各領域中形成有未圖示的裝置。並且，在晶圓W的外周側面是形成有從表面Wa到背面Wb呈現圓弧面的倒角部Wc。 [0014] 研削用保護膠帶貼著步驟是例如一面從晶圓W的外周緣側陸續放出研削膠帶T至晶圓W的表面Wa，一面在研削膠帶T上使貼著滾輪轉動，將研削膠帶T貼著於晶圓W的表面Wa的全面。然後，以沿著成為晶圓W的外周緣之倒角部Wc的方式，移動未圖示的切斷刃，研削膠帶T會被切斷成與晶圓W概略同一的平面形狀。然後，貼著成為研削膠帶T的外側領域會繞進晶圓W的倒角部Wc。另外，研削膠帶T是具備被層疊於基材薄板的黏著層，由於在後述的修剪步驟被切削除去，因此例如將黏著層設為5μm厚等比較薄的黏著層為理想。 [0015] 如圖2及圖3所示般，在研削用保護膠帶貼著步驟之後是實施修剪步驟。在修剪步驟中，以切削裝置（未圖示）的吸盤11來吸引保持晶圓W的背面Wb側，將研削膠帶T設為朝上。在如此保持的狀態下，一面使切削刀12從成為晶圓W的研削膠帶T側之表面Wa側切入至外周緣，一面將吸盤11及被保持於此的晶圓W旋轉。藉此，研削膠帶T及晶圓W的表面Wa側的倒角部Wc會被切削除去成圓形，沿著晶圓W的外周緣來形成平面視形成圓形的切削溝Wd。切削溝Wd是在其形成領域除去研削膠帶T，被形成至到達晶圓W的厚度方向中間。 [0016] 如圖4及圖5所示般，修剪步驟之後，藉由研削裝置20來實施研削步驟。在研削步驟中，利用研削裝置20的研削手段21，將被保持於吸盤22的晶圓W研削，藉此將晶圓W從背面Wb側薄厚化至完工厚度。吸盤22是以上面作為保持面來保持晶圓W，可繞著旋轉軸23的軸旋轉。研削手段21是具備：具有鉛直方向的軸心之主軸24，及被安裝於主軸24的下端之研削輪25，以及被環狀地固定於研削輪25的下部之研削磨石26。研削手段21是藉由馬達（未圖示）來使主軸24旋轉，藉此可使研削輪25以預定的旋轉速度來旋轉。 [0017] 在研削步驟中，首先，如圖4所示般，在吸盤22上載置研削膠帶T側而使晶圓W的背面Wb朝上露出。然後，藉由未圖示的吸引源的作動，利用吸盤22隔著研削膠帶T來吸引保持晶圓W，且使吸盤22繞著旋轉軸23旋轉。接著，一邊使研削手段21的研削輪25旋轉，一邊使研削手段21下降置接近晶圓W的背面Wb的方向，將旋轉的研削磨石26抵接於背面Wb。然後，以研削磨石26來一邊推壓晶圓W的背面Wb，一邊研削至到達切削溝Wd的深度，藉此晶圓W的倒角部Wc會全部被除去（參照圖5）。然後，晶圓W薄化至完工厚度為止，繼續研削磨石26的研削。 [0018] 如圖6所示般，在研削膠帶貼著步驟之後是實施轉印步驟。在轉印步驟中，在成為環狀的框架F的內部配置晶圓W之後，陸續放出與研削膠帶T不同的別的黏著膠帶Tp來貼著於晶圓W的背面Wb及框架F。藉此，隔著黏著膠帶Tp，在框架F的內側支撐晶圓W。如此的貼著是例如在黏著膠帶Tp上使貼著滾輪轉動，在成為晶圓W的研削面的背面Wb全面及框架F的一方的面貼著黏著膠帶Tp。黏著膠帶Tp的貼著後，將被貼著於晶圓W的表面Wa的研削膠帶T剝離，藉此從晶圓W的研削膠帶T往黏著膠帶Tp的轉印完了。 [0019] 可是，在以往的加工方法中，採用進行將晶圓W的表面Wa側的倒角部Wc切削除去成圓形的修剪之後，將研削膠帶T貼著於表面Wa的方法。此貼著是將比晶圓W的表面Wa大的研削膠帶T貼著之後，將切斷刃對位於晶圓W的外周緣之後，沿著外周緣的方式，將切斷刃變位而把研削膠帶T切斷成圓形。此時，在從形成階差的切削溝Wd的內周緣伸出的狀態下，研削膠帶T的外周緣被切斷，如圖7所示般，研削膠帶T的外周側會成為進入切削溝Wd或貼著於切削溝Wd的形成面的狀態。在如此的狀態下，一旦將晶圓W的背面Wb研削，則在研削後是倒角部Wc會被除去，延伸於切削溝Wd的厚度方向的形成面會成為晶圓W的外周緣，因此研削膠帶T會成為從如此的外周緣伸出的狀態。在此狀態下，一旦所欲將晶圓W貼著於別的黏著膠帶Tp而轉印，則如圖8所示般，伸出的研削膠帶T會貼在黏著膠帶Tp的上面的黏著層上，會有研削膠帶T不能剝離無法轉印的問題。 [0020] 此點，在上述實施形態中，是在修剪步驟之前貼著研削膠帶T，藉由修剪來與晶圓W的倒角部Wc一起除去研削膠帶T。藉此，如圖3所示般，研削膠帶T的外周緣會與切削溝Wd的內周緣形成一致，可防止研削膠帶T的外周側進入切削溝Wd或貼著。因此，在藉由研削步驟來將晶圓W的倒角部Wc全部除去之後，可迴避研削膠帶T從薄厚化後的晶圓W的外周緣伸出。此結果，在轉印步驟將黏著膠帶Tp貼著於晶圓W的背面Wb時，可防止在黏著膠帶Tp的黏著面貼上研削膠帶T，可容易將研削膠帶T剝離而進行轉印。 [0021] 並且，在上述實施形態中，如圖1所示般，由於研削膠帶T的外側領域會被貼著成繞進晶圓W的倒角部Wc，因此可良好地保持如此的外側領域的接著狀態。藉此，可防止在修剪步驟之研削膠帶T的非意圖的捲起或剝落，可安定地進行沿著晶圓W的外周之研削膠帶T的除去。 [0022] 另外，本發明的實施形態並非是限於上述的各實施形態者，亦可在不脫離本發明的技術思想的主旨範圍內實施各種的變更、置換、變形。而且，藉由技術的進歩或衍生的別的技術，若能以別的做法實現本發明的技術思想，則亦可利用該方法來實施。因此，申請專利範圍是涵蓋本發明的技術思想的範圍內所含的全部實施形態。 [0023] 在上述修剪步驟的切削溝Wd的深度是可適當變更，只要可切削除去研削膠帶T且可在研削步驟除去倒角部Wc。 [產業上的利用可能性] [0024] 如以上說明般，本發明是具有可迴避在將晶圓從研削用保護膠帶轉印至別的黏著膠帶時，研削用保護膠帶無法剝離的情形之效果，特別是將在外周緣具有倒角部的晶圓修剪及研削之後轉印的加工方法有用。[0012] Hereinafter, a method for processing a wafer according to this embodiment will be described with reference to the drawings. FIG. 1 shows a step of applying a protective tape for grinding, FIGS. 2 and 3 show a trimming step, FIGS. 4 and 5 show a grinding step, and FIG. 6 is an explanatory diagram showing a transfer step. In addition, the steps shown in the above-mentioned figures are merely examples, and are not limited to those constituting this structure. [0013] As shown in FIG. 1, first, a grinding protective tape attaching step of attaching a grinding protective tape T (hereinafter referred to as a grinding tape T) to the surface Wa of the wafer W is performed. A film layer D is formed on the surface Wa of the wafer W. In this film layer D, devices (not shown) are formed in various areas that are partitioned by a grid-like (not shown) planned division line. A chamfered portion Wc having an arcuate surface is formed on the outer peripheral side surface of the wafer W from the front surface Wa to the back surface Wb. [0014] The step of attaching the protective tape for grinding is, for example, gradually releasing the grinding tape T from the outer peripheral side of the wafer W to the surface Wa of the wafer W, and turning the roller on the grinding tape T to rotate the grinding tape T. The entire surface of the wafer Wa attached to the wafer W. Then, a cutting blade (not shown) is moved so as to follow the chamfered portion Wc that becomes the outer periphery of the wafer W, and the grinding tape T is cut into a plane shape roughly the same as that of the wafer W. Then, the outer area attached as the grinding tape T is wound into the chamfered portion Wc of the wafer W. In addition, the grinding tape T is provided with an adhesive layer laminated on a substrate sheet, and is removed by cutting in a trimming step to be described later. Therefore, for example, the adhesive layer is preferably a relatively thin adhesive layer having a thickness of 5 μm or the like. [0015] As shown in FIG. 2 and FIG. 3, the trimming step is performed after the grinding protective tape attaching step. In the trimming step, the back surface Wb side of the wafer W is held by the suction cup 11 of a cutting device (not shown), and the grinding tape T is set to face upward. In the state held in this way, the chuck 11 and the wafer W held thereon are rotated while the cutting blade 12 is cut into the outer periphery from the surface Wa side of the grinding tape T side which becomes the wafer W. Thereby, the chamfered portion Wc on the surface Wa side of the grinding tape T and the wafer W is cut and removed into a circle, and a cutting groove Wd is formed along the outer periphery of the wafer W in a plan view. The cutting groove Wd is formed by removing the grinding tape T in its formation region and reaching the middle of the thickness direction of the wafer W. [0016] As shown in FIGS. 4 and 5, after the trimming step, the grinding step is performed by the grinding device 20. In the grinding step, the wafer W held by the chuck 22 is ground by the grinding means 21 of the grinding device 20, thereby thinning the wafer W from the back surface Wb side to the finished thickness. The chuck 22 holds the wafer W with the upper surface as a holding surface, and is rotatable about the axis of the rotation shaft 23. The grinding means 21 includes a main shaft 24 having a vertical axis, a grinding wheel 25 attached to the lower end of the main shaft 24, and a grinding stone 26 fixed to the lower portion of the grinding wheel 25 in a ring shape. The grinding means 21 rotates the main shaft 24 by a motor (not shown), whereby the grinding wheel 25 can be rotated at a predetermined rotation speed. [0017] In the grinding step, first, as shown in FIG. 4, the grinding tape T is placed on the chuck 22 so that the back surface Wb of the wafer W is exposed upward. Then, by the operation of a suction source (not shown), the wafer W is sucked and held by the chuck 22 via the grinding tape T, and the chuck 22 is rotated around the rotation shaft 23. Next, while rotating the grinding wheel 25 of the grinding means 21, the grinding means 21 is lowered to a direction close to the back surface Wb of the wafer W, and the rotating grinding stone 26 is brought into contact with the back surface Wb. Then, while grinding the grinding stone 26 to push the back surface Wb of the wafer W, it is ground to a depth reaching the cutting groove Wd, whereby the chamfered portion Wc of the wafer W is completely removed (see FIG. 5). Then, the wafer W is thinned to the finished thickness, and the grinding of the grinding stone 26 is continued. [0018] As shown in FIG. 6, a transfer step is performed after the grinding tape attaching step. In the transfer step, after the wafer W is arranged inside the ring-shaped frame F, another adhesive tape Tp different from the grinding tape T is successively released to adhere to the back surface Wb of the wafer W and the frame F. Thereby, the wafer W is supported inside the frame F via the adhesive tape Tp. Such adhesion is performed by, for example, rotating the adhesion roller on the adhesive tape Tp, and applying the adhesive tape Tp on the entire back surface Wb of the grinding surface of the wafer W and one surface of the frame F. After the adhesive tape Tp is affixed, the grinding tape T adhered to the surface Wa of the wafer W is peeled off, whereby the transfer from the grinding tape T of the wafer W to the adhesive tape Tp is completed. [0019] However, in the conventional processing method, a method in which the chamfered portion Wc on the surface Wa side of the wafer W is cut and removed into a circular shape is trimmed, and then the grinding tape T is adhered to the surface Wa. This sticking is after the grinding tape T larger than the surface Wa of the wafer W is stuck, and the cutting edge is positioned behind the outer peripheral edge of the wafer W, and the cutting edge is displaced along the outer peripheral edge. The grinding tape T is cut into a circle. At this time, the outer peripheral edge of the grinding tape T is cut off from the inner peripheral edge of the cutting groove Wd forming the step. As shown in FIG. 7, the outer circumferential side of the grinding tape T becomes the cutting groove Wd. Alternatively, it is in a state of being in contact with the formation surface of the cutting groove Wd. In this state, once the back surface Wb of the wafer W is ground, the chamfered portion Wc is removed after the grinding, and the formation surface extending in the thickness direction of the cutting groove Wd becomes the outer periphery of the wafer W. Therefore, The grinding tape T is in a state protruding from such an outer periphery. In this state, once the wafer W is intended to be affixed to another adhesive tape Tp and transferred, as shown in FIG. 8, the extended grinding tape T is affixed to the adhesive layer on the upper surface of the adhesive tape Tp. There is a problem that the grinding tape T cannot be peeled off and cannot be transferred. [0020] In this regard, in the above embodiment, the grinding tape T is attached before the trimming step, and the grinding tape T is removed together with the chamfered portion Wc of the wafer W by trimming. Thereby, as shown in FIG. 3, the outer peripheral edge of the grinding tape T and the inner peripheral edge of the cutting groove Wd are aligned, and the outer circumferential side of the grinding tape T can be prevented from entering or adhering to the cutting groove Wd. Therefore, after the chamfered portion Wc of the wafer W is completely removed by the grinding step, the grinding tape T can be avoided from protruding from the outer periphery of the thinned wafer W. As a result, when the adhesive tape Tp is adhered to the back surface Wb of the wafer W in the transfer step, the grinding tape T can be prevented from being attached to the adhesive surface of the adhesive tape Tp, and the grinding tape T can be easily peeled off and transferred. [0021] In the above embodiment, as shown in FIG. 1, the outer area of the grinding tape T is affixed to the chamfered portion Wc wound around the wafer W, so that such an outer area can be well maintained. The state of follow. This can prevent the grinding tape T from being unintentionally rolled up or peeling off in the trimming step, and can remove the grinding tape T along the outer periphery of the wafer W in a stable manner. [0022] In addition, the embodiments of the present invention are not limited to those described above, and various changes, substitutions, and modifications can be made without departing from the scope of the technical idea of the present invention. In addition, if the technical idea of the present invention can be realized by other methods through technological advancement or other derived technologies, this method can also be used for implementation. Therefore, the scope of patent application covers all embodiments included in the scope of the technical idea of the present invention. [0023] The depth of the cutting groove Wd in the aforementioned trimming step can be appropriately changed, as long as the grinding tape T can be removed by cutting and the chamfered portion Wc can be removed in the grinding step. [Industrial Applicability] [0024] As described above, the present invention has the effect of avoiding the situation where the protective tape for grinding cannot be peeled off when transferring the wafer from the protective tape for grinding to another adhesive tape. In particular, a processing method in which a wafer having a chamfered portion on its outer periphery is trimmed and ground is transferred is useful.
[0025][0025]
12‧‧‧切削刀12‧‧‧ Cutter
20‧‧‧研削裝置20‧‧‧Grinding device
22‧‧‧吸盤22‧‧‧ Suction Cup
T‧‧‧研削膠帶（研削用保護膠帶）T‧‧‧grinding tape (protective tape for grinding)
Tp‧‧‧黏著膠帶Tp‧‧‧adhesive tape
W‧‧‧晶圓W‧‧‧ Wafer
Wa‧‧‧表面Wa‧‧‧ surface
Wb‧‧‧背面Wb‧‧‧ back
Wc‧‧‧倒角部Wc‧‧‧Chamfer
[0011] 圖1是實施形態的研削用保護膠帶貼著步驟的說明圖。 圖2是實施形態的修剪步驟的說明圖。 圖3是實施形態的修剪步驟的說明圖。 圖4是實施形態的研削步驟的說明圖。 圖5是實施形態的研削步驟的說明圖。 圖6是實施形態的轉印步驟的說明圖。 圖7是以往方法的加工方法的中途段階的說明圖。 圖8是以往方法的不良情況的說明圖。[0011] FIG. 1 is an explanatory diagram of a step of attaching a protective tape for grinding according to an embodiment. FIG. 2 is an explanatory diagram of a trimming step according to the embodiment. FIG. 3 is an explanatory diagram of a trimming step according to the embodiment. FIG. 4 is an explanatory diagram of a grinding procedure of the embodiment. FIG. 5 is an explanatory diagram of a grinding process according to the embodiment. FIG. 6 is an explanatory diagram of a transfer step of the embodiment. Fig. 7 is an explanatory diagram of a halfway step of a processing method of a conventional method. FIG. 8 is an explanatory diagram of a defect of the conventional method.
Claims (1)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016232372A JP2018092963A (en) | 2016-11-30 | 2016-11-30 | Wafer processing method |
| JP2016-232372 | 2016-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201822267A true TW201822267A (en) | 2018-06-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106134890A TW201822267A (en) | 2016-11-30 | 2017-10-12 | Wafer processing method capable of easily transferring a wafer from a protective tape for grinding to another adhesive tape |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2018092963A (en) |
| CN (1) | CN108122735A (en) |
| TW (1) | TW201822267A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6887313B2 (en) * | 2017-05-31 | 2021-06-16 | 株式会社ディスコ | Wafer processing method |
| JP7222636B2 (en) * | 2018-09-12 | 2023-02-15 | 株式会社ディスコ | Edge trimming device |
| JP2020066064A (en) * | 2018-10-22 | 2020-04-30 | 株式会社ディスコ | Processing method and processing device for workpiece |
| JP7313775B2 (en) * | 2019-10-18 | 2023-07-25 | 株式会社ディスコ | Wafer processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011124266A (en) * | 2009-12-08 | 2011-06-23 | Disco Abrasive Syst Ltd | Method of processing wafer |
| JP2013247135A (en) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | Wafer processing method |
| JP2015217461A (en) * | 2014-05-16 | 2015-12-07 | 株式会社ディスコ | Processing method of wafer |
| JP2016127232A (en) * | 2015-01-08 | 2016-07-11 | 株式会社ディスコ | Processing method of wafer |
-
2016
- 2016-11-30 JP JP2016232372A patent/JP2018092963A/en active Pending
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| CN108122735A (en) | 2018-06-05 |
| JP2018092963A (en) | 2018-06-14 |
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