TW201737362A - Transient liquid phase material bonding and sealing structures and methods of forming same - Google Patents

Transient liquid phase material bonding and sealing structures and methods of forming same Download PDF

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Publication number
TW201737362A
TW201737362A TW105140504A TW105140504A TW201737362A TW 201737362 A TW201737362 A TW 201737362A TW 105140504 A TW105140504 A TW 105140504A TW 105140504 A TW105140504 A TW 105140504A TW 201737362 A TW201737362 A TW 201737362A
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Taiwan
Prior art keywords
bonding
layer
liquid phase
substrate
alloy
Prior art date
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TW105140504A
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Chinese (zh)
Inventor
布萊德利 保羅 包柏
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天工方案公司
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Publication of TW201737362A publication Critical patent/TW201737362A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
    • H—ELECTRICITY
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/142—HF devices
    • H01L2924/1421—RF devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/36—Material effects
    • H01L2924/365—Metallurgical effects
    • H01L2924/3651—Formation of intermetallics
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding

Abstract

A bonding element includes a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

Description

暫態液相材料接合及密封結構及形成其之方法Transient liquid material bonding and sealing structure and method for forming same

本發明之態樣及實施例係針對電或電子裝置組件及/或針對電或電子裝置組件之封裝件之組件的金屬化及/或接合。Aspects and embodiments of the present invention are directed to metallization and/or bonding of electrical or electronic device components and/or components of packages for electrical or electronic device components.

在電及電子裝置製造及裝配之領域中，常常需要的是使得基板或表面(例如，電路板、陶瓷單塊微波積體電路(MMIC)基板等)為導電的。亦常常需要的是用導熱及/或導電材料將電或電子組件接合至基板或接合針對電子組件之封裝件之組件。用於形成此等導電表面或接合之製程可面臨多個挑戰，例如，成本、與其他製程步驟不相容之高溫的使用、基板之中空特徵之填充上的困難及/或與其他製程步驟不相容之副產物的除氣。In the field of electrical and electronic device fabrication and assembly, it is often desirable to have a substrate or surface (eg, a circuit board, a ceramic monolithic microwave integrated circuit (MMIC) substrate, etc.) electrically conductive. It is also often desirable to bond electrical or electronic components to a substrate or to components that are packaged for electronic components with thermally and/or electrically conductive materials. Processes for forming such conductive surfaces or bonding can face multiple challenges, such as cost, use of high temperatures that are incompatible with other process steps, difficulties in filling the hollow features of the substrate, and/or other process steps. Degassing of compatible by-products.

根據本發明之一態樣，提供一種接合結構。該接合結構包括安置於一基板上之第一合金組份之第一層，及安置於第一合金組份上之第二合金組份的第一層。第二合金組份相較於第一合金組份具有較低熔融溫度。第一合金組份之第二層安置於第二合金組份之第一層上，且第二合金組份之第二層安置於第一合金組份之第二層上。 在一些實施例中，接合結構進一步包含安置於第二合金組份之第二層上的第一合金組份之第三層。 在一些實施例中，接合結構進一步包含第一障壁層，其經組態以密封第二合金組份之第二層之表面免受氛圍影響且抑制第二合金組份之第二層之表面的氧化。障壁層可包括以下各者中之一或多者：鈦、鉑、鎳、氧化銦及錫。 在一些實施例中，接合結構進一步包含安置於第一合金組份之每一層與第二合金組份之每一層之間的界面處之界面障壁層，該等障壁層經組態以抑制第一合金組份與第二合金組份之相互擴散。界面障壁層可包括以下各者中之一或多者：鈦、鉑、鎳、氧化銦及錫。 在一些實施例中，第一合金組份及第二合金組份經選擇以當接合結構經加熱至高於第二合金組份之熔融溫度且低於第一合金組份之熔融溫度的溫度時相互擴散且形成合金。 在一些實施例中，接合結構中第一合金組份之數量及第二合金組份之數量經選擇以形成合金，該合金具有在第一合金組份之熔融溫度與第二合金組份之熔融溫度之間的熔融溫度。 在一些實施例中，第一合金組份為金，且在一些實施例中，第二合金組份為銦。 在一些實施例中，第一合金組份及第二合金組份為選自包括以下各者之數對組份的一對組份：鋁及鍺、金及矽、金及錫、銅及錫、鉛及錫以及銦及錫。 在一些實施例中，一電子組件封裝件被用接合結構氣密地密封。 在一些實施例中，一電子裝置包括用接合結構接合至基板之至少一種組件。該電子裝置可包括經由接合結構與基板之電觸點電連通的至少一個電觸點。 根據另一態樣，提供一種形成一無線裝置之方法。方法包含形成至少一個模組，該至少一個模組包括具有射頻電路之基板及用第一接合結構接合至射頻電路之一部分的至少一個裝置。第一接合結構包括安置於基板上之第一合金組份之第一層、安置於第一合金組份上的第二合金組份之第一層、安置於第二合金組份之第一層上的第一合金組份之第二層及安置於第一合金組份之第二層上的第二合金組份之第二層，第二合金組份相較於第一合金組份具有較低熔融溫度。 在一些實施例中，至少一個裝置為功率放大器、低雜訊放大器及天線開關模組中之一者。 在一些實施例中，該方法進一步包含用第二接合結構氣密地密封至少一個裝置於封裝件中，該第二接合結構包括安置於基板上之第一合金組份之第一層、安置於第一合金組份上之第二合金組份之第一層、安置於第二合金組份之第一層上的第一合金組份之第二層及安置於第一合金組份之第二層上的第二合金組份之第二層，第二合金組份相較於第一合金組份具有較低熔融溫度。 在一些實施例中，該方法進一步包含用第一接合結構形成至少一個裝置之至少一個電觸點與射頻電路之至少一個電觸點之間的電連接。 在一些實施例中，該方法進一步包含形成各自與至少一個模組電連通之收發器及天線。 根據另一態樣，提供一種將第一總成接合至第二總成之方法。該方法包含提供包括安置於第一基板上之第一二元組份層的第一總成及提供第二總成，該第二總成包括安置於基板上之第一二元組份之第一層、安置於第一二元組份之層上的第二二元組份之第一層、安置於第二二元組份之第一層上的第一二元組份之第二層及安置於第一二元組份之第二層上的第二二元組份之第二層，第二二元組份相較於第一二元組份具有較低熔融溫度。該方法進一步包含對準第二總成與第一總成、將第一總成及第二總成加熱至高於第二二元組份之熔點但低於第一二元組份之熔點的溫度，及維持該溫度歷時對於第一二元組份之層足夠與第二二元組份之層相互擴散以自第一二元組份及第二二元組份形成合金的時間。 根據另一態樣，提供一種在基板上形成接合結構之方法。該方法包含在基板上形成第一二元組份層，在第一二元組份層上形成第一障壁層，及在第一障壁層上形成第二二元組份層。第一障壁層包括抑制第二二元組份擴散至第一二元組份層中之材料。該方法進一步包含在第二二元組份層上形成第二障壁層，在第二障壁層上形成另一第一二元組份層，在另一第一二元組份層上形成第三障壁層，在第三障壁層上形成另一第二二元組份層，及在另一第二二元組份層上形成第四障壁層。第四障壁層包括抑制氧自氛圍擴散至另一第二二元組份層中之材料。 在一些實施例中，形成第二二元組份層包含在第一障壁層上沈積相較於第一二元組份具有較低熔融溫度的材料。 在一些實施例中，形成第二二元組份層包含沈積材料，該材料在加熱接合結構至高於第二二元組份之熔融溫度之後便將與第一二元組份相互擴散以形成合金。 在一些實施例中，第一二元組份層中且另一二元組份層中第一二元組份之數量以及第二二元組份層中且另一第二二元組份層中第二二元組份的數量經選擇，使得合金具有在第一二元組份之熔融溫度與第二二元組份之熔融溫度之間的熔融溫度。 在一些實施例中，該方法進一步包含在第四障壁層上形成另一第一二元組份層。 在一些實施例中，沈積第一二元組份層包含沈積金層於基板上。 在一些實施例中，沈積第二二元組份層包含沈積銦層於第一障壁層上。 在一些實施例中，形成第一障壁層、第二障壁層及第三障壁層中之至少一者包含沈積鈦、鉑、鎳、氧化銦及錫中之一或多者的層。 根據另一態樣，提供一種包含複數個經塗佈顆粒之焊料材料，每一顆粒包括核心及塗層，核心及塗層經選擇以為焊料材料提供暫態液相。 在一些實施例中，核心及塗層包括能夠在施加熱至焊料材料之後便形成合金的材料。塗層材料可具有低於核心材料之熔融溫度的熔融溫度。施加熱可使得塗層被加熱至大於塗層材料之熔融溫度但低於核心材料之熔融溫度的溫度，以藉此液化塗層且允許經液化塗層材料擴散至核心材料中。塗層及核心可經設定尺寸，使得大體上所有經液化塗層材料擴散至核心材料中以形成合金。 在一些實施例中，合金為導電的。核心材料可包括金。塗層材料可包括銦。 在一些實施例中，每一顆粒進一步包括實施於塗層上之外層，該外層經組態以防止或減小塗層之氧化。外層可包括金。 在一些實施例中，每一顆粒進一步包括安置於塗層與核心之間的障壁層，障壁層經組態以防止或減小塗層與核心之間的過早擴散。障壁層可包括鈦。 根據另一態樣，提供一種用於製造焊料材料之方法。該方法包含形成或提供複數個核心粒子，及用塗層塗佈每一核心粒子以產生經塗佈之顆粒，該經塗佈顆粒具有暫態液相屬性。 根據另一態樣，提供一種用於形成導電合金之方法。該方法包含提供包括複數個經塗佈顆粒之焊料材料，每一顆粒包括核心及塗層，核心及塗層經選擇以為焊料材料提供暫態液相；將焊料材料加熱至介於塗層之熔融溫度與核心之熔融溫度之間的溫度，使得塗層變成液化的，塗層之熔融溫度低於核心之熔融溫度；及維持加熱直至大量經液化塗層擴散至核心中以藉此形成合金。 在一些實施例中，合金具有顯著高於塗層之溫度的熔融溫度。 根據另一態樣，提供一種用於在基板上形成導電特徵之方法。該方法包含形成或提供複數個經塗佈顆粒在溶液中之懸浮液，每一顆粒包括核心及塗層，核心及塗層經選擇以提供暫態液相屬性；將懸浮液施配於基板上；汽化溶液中之至少一些；將經塗佈顆粒加熱至介於塗層之熔融溫度與核心之熔融溫度之間的溫度，使得塗層變成液化的，塗層之熔融溫度低於核心之熔融溫度；及維持加熱直至大量液化塗層擴散至核心中以藉此形成導電合金。 在一些實施例中，施配包括旋塗、噴霧或絲網印刷。 在一些實施例中，該基板包括半導體晶圓或封裝基板。封裝基板可包括層壓基板或陶瓷基板。陶瓷基板可包括低溫共燒陶瓷基板。 在一些實施例中，導電特徵為導電襯墊或導電跡線。導電特徵可為經組態以提供射頻(RF)屏蔽功能性之導電層。導電層可包括保形導電層。 根據另一態樣，提供一種已封裝射頻(RF)模組。已封裝RF模組包含封裝基板，該封裝基板包括接地平面、裝設於封裝基板上之一或多種組件及實施於一或多種組件上方之導電層，該導電層電連接至接地平面以為一或多種組件中之至少一些提供RF屏蔽功能性，導電層包括由加熱焊料材料產生之合金，焊料材料包括複數個經塗佈之顆粒，每一顆粒包括核心及塗層，核心及塗層經選擇以為焊料材料提供暫態液相。 在一些實施例中，已封裝RF模組進一步包含囊封一或多種組件之包覆模製件，導電層安置於包覆模製件之上表面上。 在一些實施例中，導電層中之至少一些直接形成於一或多種組件上。 在一些實施例中，導電層進一步覆蓋封裝基板之一或多個側以便連同在一或多種組件上方之部分產生等形覆蓋。 根據另一態樣，提供一種在半導體晶粒上形成導電特徵之方法。該方法包含：使用塗佈材料結構沈積導電材料層於晶粒上，該塗佈材料結構包括第一合金組份之第一層、安置於第一合金組份上的第二合金組份之第一層、安置於第二合金組份之第一層上的第一合金組份之第二層及安置於第一合金組份之第二層上的第二合金組份之第二層，第二合金組份相較於第一合金組份具有較低熔融溫度；及圖案化導電材料層。 根據另一態樣，提供一種形成電子組件模組之方法，該電子組件模組包括具有電路之基板。該方法包含用接合結構將至少一個裝置接合至電路之一部分，該接合結構包括安置於基板上的第一合金組份之第一層、安置於第一合金組份上的第二合金組份之第一層、安置於第二合金組份之第一層上的第一合金組份之第二層及安置於第一合金組份之第二層上的第二合金組份之第二層，第二合金組份相較於第一合金組份具有較低熔融溫度。 根據另一態樣，提供一種接合元件。該接合元件包含一第一暫態液相結構，該第一暫態液相結構包括一第一材料及一第二材料，該第一材料相較於該第二材料具有一較高熔點，該第一暫態液相結構中該第一材料與該第二材料之一數量的一比率具有一第一值；及包括該第一材料及第二材料之一第二暫態液相結構，該第二暫態液相結構中該第一材料與該第二材料之一數量的一比率具有不同於該第一值的一第二值。 在一些實施例中，接合元件進一步包含包括第一材料及第二材料之第三暫態液相結構，第三暫態液相結構中第一材料及第二材料之數量的比率具有第三值，第三值係在第一值與第二值之間。 在一些實施例中，第一值、第二值及第三值中之一者經選擇，使得第一暫態液相結構、第二暫態液相結構及第三暫態液相結構中之一者回應於加熱至高於第二材料之熔點而形成金屬間合金，該合金具有高於第二材料之熔點的熔點。 在一些實施例中，第一暫態液相結構安置於基板上，且圍繞安置於基板上之裝置。第二暫態液相結構可圍繞第一暫態液相結構。至少一個暫態液相支柱可連接第一暫態液相結構與第二暫態液相結構。第一暫態液相結構及第二暫態液相結構中之一者可經組態以引導熔融之液體自第一暫態液相結構及第二暫態液相結構中之一者外逸遠離裝置。第一暫態液相結構及第二暫態液相結構中之一者可經組態以導引經熔融液體自第一暫態液相結構及第二暫態液相結構中之一者朝向第一暫態液相結構及第二暫態液相結構中之另一者外逸。 根據另一態樣，提供一種接合元件。該接合元件包含一第一經接合元件，該第一經接合元件包括一第一材料與一第二材料之第一合金，該第一材料相較於該第二材料具有一較高熔點，該第一經接合結構中該第一材料與該第二材料之一數量的一比率具有一第一值；及包括該第一材料與第二材料之第二合金的一第二經接合元件，該第二經接合元件中該第一材料與該第二材料之一數量的一比率具有不同於該第一值的一第二值。 在一些實施例中，第一合金及第二合金中之一者為第一材料及第二材料之化學計量金屬間合金。第一經接合元件及第二經接合元件中之一者可包括相較於化學計量金屬間合金更富第二材料之區。 在一些實施例中，接合元件將裝置氣密地密封於凹穴內。裝置可為射頻(RF)裝置。 在一些實施例中，接合元件包括於射頻(RF)裝置模組中。接合元件可包括於RF裝置中。 在一些實施例中，接合元件安置於裝置之接觸墊上，且提供自外部電路至接觸墊之電連接。 在一些實施例中，電子裝置包括用接合元件接合至基板之至少一種組件。該電子裝置可包括經由接合元件而與基板之電觸點電連通之至少一個電觸點。 根據另一態樣，提供一種形成一無線裝置之方法。該方法包含形成至少一個模組，該模組包括具有射頻電路之基板及用接合元件接合至射頻電路之一部分的至少一個裝置。接合元件包括一第一經接合元件，該第一經接合元件包括一第一材料與一第二材料之第一合金，該第一材料相較於該第二材料具有一較高熔點，該第一經接合元件中該第一材料與該第二材料之一數量的一比率具有一第一值；及包括該第一材料與該第二材料之第二合金的一第二經接合元件，該第二經接合元件中該第一材料與該第二材料之一數量的一比率具有不同於該第一值的一第二值。 根據另一態樣，提供一種形成包括一裝置及一基板之一無線模組的方法。該方法包含在該裝置及該基板中之一者之一表面上形成一第一接合元件，該第一接合元件包括一第一材料與一第二材料之一第一合金，該第一材料相較於該第二材料具有一較高熔點，在該第一接合元件中該第一材料及第二材料之數量的一比率具有一第一值；在該裝置及該基板中之一者之一表面上形成一第二接合元件，該第二接合元件包括該第一材料與該第二材料之一第二合金，在該第二接合元件中該第一材料及第二材料之數量的一比率具有不同於該第一值的一第二值；用安置於該裝置與該基板之間且與該裝置及該基板兩者接觸之該第一接合元件及該第二接合元件使該裝置與該基板接觸；及用足以使第一接合元件及第二接合元件中之第一材料及第二材料相互擴散且形成第一經接合元件及第二接合元件的溫度及時間加熱該第一接合元件及該第二接合元件。 在一些實施例中，裝置為功率放大器、低雜訊放大器及天線開關模組中之一者。 在一些實施例中，在第一經接合元件中第一材料及第二材料之數量的比率藉由第一經接合元件與第三經接合元件之間的距離來判定。 根據另一態樣，提供一種形成至少一個接合結構之方法。該方法包含在一基板之一第一部分上形成一第一接合元件。該第一接合元件包括一第一材料及一第二材料。一量之第一材料及一量之第二材料以第一比率存在於第一接合元件中。該方法進一步包括在該基板之一第二部分上形成至少一個第二接合元件。該至少一個第二接合元件包括第一材料及第二材料。該量之第一材料及該量之第二材料以不同於第一比率之第二比率存在於至少一個第二接合元件中。該第一接合元件及該至少一第二接合元件經加熱以形成該至少一個接合結構，該至少一個接合結構主要由該第一材料及該第二材料之一大體上化學計量合金組成。 在一些實施例中，形成該第一接合元件包括形成具有第一材料及第二材料中之一者之一突起的第一接合元件，第一材料及第二材料中之該一者相較於第一材料及第二材料中之另一者具有較高熔融溫度，該突起經組態以將熔融材料自第一接合元件朝向第二接合元件導引。According to an aspect of the invention, a joint structure is provided. The bonding structure includes a first layer of a first alloy component disposed on a substrate and a first layer of a second alloy component disposed on the first alloy component. The second alloy component has a lower melting temperature than the first alloy component. A second layer of the first alloy component is disposed on the first layer of the second alloy component, and a second layer of the second alloy component is disposed on the second layer of the first alloy component. In some embodiments, the bonding structure further comprises a third layer of the first alloy component disposed on the second layer of the second alloy component. In some embodiments, the bonding structure further includes a first barrier layer configured to seal a surface of the second layer of the second alloy component from the atmosphere and inhibiting a surface of the second layer of the second alloy component Oxidation. The barrier layer may include one or more of the following: titanium, platinum, nickel, indium oxide, and tin. In some embodiments, the bonding structure further comprises an interface barrier layer disposed at an interface between each of the first alloy component and each of the second alloy component, the barrier layers being configured to inhibit the first The interdiffusion of the alloy component and the second alloy component. The interface barrier layer can include one or more of the following: titanium, platinum, nickel, indium oxide, and tin. In some embodiments, the first alloy component and the second alloy component are selected to each other when the bonding structure is heated to a temperature higher than a melting temperature of the second alloy component and lower than a melting temperature of the first alloy component Diffusion and alloy formation. In some embodiments, the number of first alloy components and the amount of the second alloy component in the joint structure are selected to form an alloy having a melting temperature of the first alloy component and melting of the second alloy component The melting temperature between temperatures. In some embodiments, the first alloy component is gold, and in some embodiments, the second alloy component is indium. In some embodiments, the first alloy component and the second alloy component are a pair of components selected from the group consisting of aluminum and tantalum, gold and rhenium, gold and tin, copper, and tin. , lead and tin as well as indium and tin. In some embodiments, an electronic component package is hermetically sealed with a bonded structure. In some embodiments, an electronic device includes at least one component bonded to a substrate with a bonding structure. The electronic device can include at least one electrical contact in electrical communication with an electrical contact of the substrate via the bonding structure. According to another aspect, a method of forming a wireless device is provided. The method includes forming at least one module, the at least one module including a substrate having a radio frequency circuit and at least one device coupled to a portion of the radio frequency circuit with the first bonding structure. The first bonding structure includes a first layer of the first alloy component disposed on the substrate, a first layer of the second alloy component disposed on the first alloy component, and a first layer disposed on the second alloy component a second layer of the first alloy component and a second layer of the second alloy component disposed on the second layer of the first alloy component, the second alloy component having a comparison with the first alloy component Low melting temperature. In some embodiments, at least one of the devices is one of a power amplifier, a low noise amplifier, and an antenna switch module. In some embodiments, the method further comprises hermetically sealing the at least one device in the package with a second bonding structure, the second bonding structure comprising a first layer of the first alloy component disposed on the substrate, disposed in a first layer of the second alloy component on the first alloy component, a second layer of the first alloy component disposed on the first layer of the second alloy component, and a second layer disposed in the first alloy component The second layer of the second alloy component on the layer, the second alloy component has a lower melting temperature than the first alloy component. In some embodiments, the method further includes forming, by the first bonding structure, an electrical connection between the at least one electrical contact of the at least one device and the at least one electrical contact of the radio frequency circuit. In some embodiments, the method further includes forming a transceiver and an antenna each in electrical communication with the at least one module. According to another aspect, a method of joining a first assembly to a second assembly is provided. The method includes providing a first assembly including a first binary component layer disposed on a first substrate and providing a second assembly, the second assembly including a first binary component disposed on the substrate a first layer of the second binary component disposed on the layer of the first binary component, and a second layer of the first binary component disposed on the first layer of the second binary component And a second layer of the second binary component disposed on the second layer of the first binary component, the second binary component having a lower melting temperature than the first binary component. The method further includes aligning the second assembly with the first assembly, heating the first assembly and the second assembly to a temperature above a melting point of the second binary component but below a melting point of the first binary component And maintaining the temperature for the time that the layer of the first binary component is sufficiently interdiffused with the layer of the second binary component to form an alloy from the first binary component and the second binary component. According to another aspect, a method of forming a bonded structure on a substrate is provided. The method includes forming a first binary component layer on a substrate, forming a first barrier layer on the first binary component layer, and forming a second binary component layer on the first barrier layer. The first barrier layer includes a material that inhibits diffusion of the second binary component into the first binary component layer. The method further includes forming a second barrier layer on the second binary component layer, forming another first binary component layer on the second barrier layer, and forming a third on the other first binary component layer The barrier layer forms another second binary component layer on the third barrier layer and a fourth barrier layer on the other second binary component layer. The fourth barrier layer includes a material that inhibits diffusion of oxygen from the atmosphere into another second binary component layer. In some embodiments, forming the second binary component layer comprises depositing a material having a lower melting temperature on the first barrier layer than the first binary component. In some embodiments, forming the second binary component layer comprises depositing a material that will interdiffused with the first binary component to form an alloy after heating the bonded structure to a temperature above the melting temperature of the second binary component . In some embodiments, the number of the first binary component in the first binary component layer and the other binary component layer and the second binary component layer in the second binary component layer The amount of the second binary component is selected such that the alloy has a melting temperature between the melting temperature of the first binary component and the melting temperature of the second binary component. In some embodiments, the method further includes forming another first binary component layer on the fourth barrier layer. In some embodiments, depositing the first binary component layer comprises depositing a gold layer on the substrate. In some embodiments, depositing the second binary component layer comprises depositing an indium layer on the first barrier layer. In some embodiments, forming at least one of the first barrier layer, the second barrier layer, and the third barrier layer comprises depositing one or more layers of titanium, platinum, nickel, indium oxide, and tin. According to another aspect, a solder material comprising a plurality of coated particles, each particle comprising a core and a coating, the core and the coating being selected to provide a transient liquid phase for the solder material is provided. In some embodiments, the core and coating comprise a material that is capable of forming an alloy after application of heat to the solder material. The coating material can have a melting temperature that is lower than the melting temperature of the core material. Applying heat may cause the coating to be heated to a temperature greater than the melting temperature of the coating material but below the melting temperature of the core material to thereby liquefy the coating and allow diffusion of the liquefied coating material into the core material. The coating and core can be sized such that substantially all of the liquefied coating material diffuses into the core material to form an alloy. In some embodiments, the alloy is electrically conductive. The core material can include gold. The coating material can include indium. In some embodiments, each particle further comprises an outer layer disposed on the coating, the outer layer configured to prevent or reduce oxidation of the coating. The outer layer can include gold. In some embodiments, each particle further includes a barrier layer disposed between the coating and the core, the barrier layer configured to prevent or reduce premature diffusion between the coating and the core. The barrier layer may comprise titanium. According to another aspect, a method for making a solder material is provided. The method comprises forming or providing a plurality of core particles, and coating each core particle with a coating to produce coated particles having transient liquid phase properties. According to another aspect, a method for forming a conductive alloy is provided. The method includes providing a solder material comprising a plurality of coated particles, each particle comprising a core and a coating, the core and the coating being selected to provide a transient liquid phase for the solder material; and heating the solder material to a melting of the coating The temperature between the temperature and the melting temperature of the core causes the coating to become liquefied, the melting temperature of the coating being lower than the melting temperature of the core; and heating is maintained until a large amount of the liquefied coating diffuses into the core to thereby form an alloy. In some embodiments, the alloy has a melting temperature that is significantly higher than the temperature of the coating. According to another aspect, a method for forming a conductive feature on a substrate is provided. The method comprises forming or providing a suspension of a plurality of coated particles in solution, each particle comprising a core and a coating, the core and the coating being selected to provide transient liquid phase properties; and the suspension is applied to the substrate At least some of the vaporization solution; heating the coated particles to a temperature between the melting temperature of the coating and the melting temperature of the core, such that the coating becomes liquefied, and the melting temperature of the coating is lower than the melting temperature of the core And maintaining heating until a large amount of liquefied coating diffuses into the core to thereby form a conductive alloy. In some embodiments, dispensing includes spin coating, spraying, or screen printing. In some embodiments, the substrate comprises a semiconductor wafer or a package substrate. The package substrate may include a laminate substrate or a ceramic substrate. The ceramic substrate may include a low temperature co-fired ceramic substrate. In some embodiments, the conductive features are conductive pads or conductive traces. The conductive features can be conductive layers configured to provide radio frequency (RF) shielding functionality. The conductive layer can include a conformal conductive layer. According to another aspect, a packaged radio frequency (RF) module is provided. The packaged RF module includes a package substrate including a ground plane, one or more components mounted on the package substrate, and a conductive layer disposed over the one or more components, the conductive layer being electrically connected to the ground plane to be one or At least some of the various components provide RF shielding functionality, the conductive layer comprising an alloy produced by heating the solder material, the solder material comprising a plurality of coated particles, each particle comprising a core and a coating, the core and the coating being selected The solder material provides a transient liquid phase. In some embodiments, the packaged RF module further includes an overmold that encapsulates one or more components, the conductive layer being disposed on an upper surface of the overmold. In some embodiments, at least some of the conductive layers are formed directly on one or more components. In some embodiments, the conductive layer further covers one or more sides of the package substrate to create an isomorphic coverage along with portions of the one or more components. According to another aspect, a method of forming a conductive feature on a semiconductor die is provided. The method includes depositing a layer of a conductive material on a die using a coating material structure comprising a first layer of a first alloy component and a second alloy component disposed on the first alloy component a second layer of the first alloy component disposed on the first layer of the second alloy component and a second layer of the second alloy component disposed on the second layer of the first alloy component, The second alloy component has a lower melting temperature than the first alloy component; and the patterned conductive material layer. According to another aspect, a method of forming an electronic component module including a substrate having an electrical circuit is provided. The method includes bonding at least one device to a portion of a circuit using a bonding structure, the bonding structure comprising a first layer of a first alloy component disposed on the substrate, and a second alloy component disposed on the first alloy component a first layer, a second layer of the first alloy component disposed on the first layer of the second alloy component, and a second layer of the second alloy component disposed on the second layer of the first alloy component, The second alloy component has a lower melting temperature than the first alloy component. According to another aspect, an engagement element is provided. The bonding element includes a first transient liquid phase structure, the first transient liquid phase structure comprising a first material and a second material, the first material having a higher melting point than the second material, a ratio of the first material to the first material in the first transient liquid phase structure has a first value; and a second transient liquid phase structure including the first material and the second material, A ratio of the amount of the first material to the second material in the second transient liquid phase structure has a second value different from the first value. In some embodiments, the bonding element further includes a third transient liquid phase structure including the first material and the second material, the ratio of the number of the first material and the second material in the third transient liquid phase structure having a third value The third value is between the first value and the second value. In some embodiments, one of the first value, the second value, and the third value is selected such that the first transient liquid phase structure, the second transient liquid phase structure, and the third transient liquid phase structure One forms an intermetallic alloy in response to heating to a temperature above the melting point of the second material, the alloy having a melting point above the melting point of the second material. In some embodiments, the first transient liquid phase structure is disposed on the substrate and surrounds the device disposed on the substrate. The second transient liquid phase structure can surround the first transient liquid phase structure. At least one transient liquid phase strut may be coupled to the first transient liquid phase structure and the second transient liquid phase structure. One of the first transient liquid phase structure and the second transient liquid phase structure can be configured to direct the molten liquid from one of the first transient liquid phase structure and the second transient liquid phase structure Keep away from the device. One of the first transient liquid phase structure and the second transient liquid phase structure can be configured to direct the molten liquid from one of the first transient liquid phase structure and the second transient liquid phase structure The other of the first transient liquid phase structure and the second transient liquid phase structure escapes. According to another aspect, an engagement element is provided. The joining element includes a first joined element, the first joined element comprising a first material and a first alloy of a second material, the first material having a higher melting point than the second material, a ratio of the first material to the first material in the first joined structure having a first value; and a second joined component including the first material and the second alloy of the second material, A ratio of the amount of the first material to the second material in the second joined component has a second value that is different from the first value. In some embodiments, one of the first alloy and the second alloy is a stoichiometric intermetallic alloy of the first material and the second material. One of the first joined element and the second joined element may comprise a region richer in the second material than the stoichiometric intermetallic alloy. In some embodiments, the engagement element hermetically seals the device within the pocket. The device can be a radio frequency (RF) device. In some embodiments, the engagement elements are included in a radio frequency (RF) device module. The engagement elements can be included in the RF device. In some embodiments, the engagement elements are disposed on contact pads of the device and provide electrical connections from external circuitry to the contact pads. In some embodiments, the electronic device includes at least one component bonded to the substrate with an engagement element. The electronic device can include at least one electrical contact in electrical communication with an electrical contact of the substrate via the bonding element. According to another aspect, a method of forming a wireless device is provided. The method includes forming at least one module including a substrate having a radio frequency circuit and at least one device bonded to a portion of the radio frequency circuit with the bonding element. The joining element includes a first joined element, the first joined element comprising a first material and a first alloy of a second material, the first material having a higher melting point than the second material, the first a ratio of the first material to the second material in the joint element having a first value; and a second joined component including the first material and the second alloy of the second material, A ratio of the amount of the first material to the second material in the second joined component has a second value that is different from the first value. According to another aspect, a method of forming a wireless module including a device and a substrate is provided. The method includes forming a first bonding element on a surface of one of the device and the substrate, the first bonding component comprising a first alloy and a first alloy of a second material, the first material phase Having a higher melting point than the second material, a ratio of the number of the first material and the second material in the first bonding element has a first value; one of the device and the substrate Forming a second joining element on the surface, the second joining element comprising a second alloy of the first material and the second material, and a ratio of the quantity of the first material and the second material in the second joining element Having a second value different from the first value; the first engagement element and the second engagement element disposed between the device and the substrate and in contact with both the device and the substrate to cause the device to Contacting the substrate; and heating the first bonding element with a temperature and time sufficient to mutually diffuse the first material and the second material of the first bonding element and the second bonding element and form the first bonding element and the second bonding element The second joint element . In some embodiments, the device is one of a power amplifier, a low noise amplifier, and an antenna switch module. In some embodiments, the ratio of the number of first materials and second materials in the first joined element is determined by the distance between the first joined element and the third joined element. According to another aspect, a method of forming at least one joint structure is provided. The method includes forming a first bonding element on a first portion of a substrate. The first bonding element includes a first material and a second material. A quantity of the first material and a second amount of the second material are present in the first joining element at a first ratio. The method further includes forming at least one second engagement element on a second portion of the substrate. The at least one second engagement element includes a first material and a second material. The first amount of material and the second material of the amount are present in the at least one second joining element at a second ratio different from the first ratio. The first joining element and the at least one second joining element are heated to form the at least one joining structure, the at least one joining structure consisting essentially of a substantially stoichiometric alloy of the first material and the second material. In some embodiments, forming the first bonding element includes forming a first bonding element having a protrusion of one of the first material and the second material, the one of the first material and the second material being compared to The other of the first material and the second material has a higher melting temperature, the protrusion being configured to direct the molten material from the first engagement element toward the second engagement element.

本發明的應用並不限於以下描述內容中闡述或圖式中說明之構造之細節及組件之配置。本發明能夠具有其他實施例且能夠以各種方式實踐或進行。此外，本文中所使用之措詞及術語出於描述之目的且不應視為限制性的。本文中對「包括」、「包含」、「具有」、「含有」、「涉及」及其變體的使用意謂涵蓋在其之後所列舉的項目及其等效物以及額外項目。 本文中所揭示為關於暫態液相(TLP)表面塗佈及接合之實例。在一些實施例中，暫態液相表面塗佈或接合經由塗覆具有複數個層之顆粒之懸浮液繼之以加熱以引起表面塗佈或接合來達成。在其他實施例中，暫態液相表面塗佈或接合經由塗覆具有複數個層之膜至一或多個表面或在一或多個表面之間塗覆該膜繼之以加熱以引起表面塗佈或接合來達成。所得表面塗佈或接合可用以(例如)結合組件、使得表面導電、在結構之中空特徵內提供導電路徑等。舉例而言，在一些實施例中，暫態液相接合製程可用以形成如圖1中所說明之結構10，該結構10具有用接合材料層14接合至第二基板或組件16的第一基板或組件12。在各種實施例中，基板或組件12、16中之一者或兩者為作用中基板，例如，可包括一或多個主動裝置的半導體材料基板。在其他實施例中，基板或組件12、16中之一者或兩者可為裝設基板，例如，印刷電路板，或用於電子裝置之封裝件的組件。 在一些實施例中，可利用暫態液相表面塗佈製程以形成如圖2中所說明之結構20，該結構20具有接合至基板22之上表面24的導電塗層28。導電塗層保形地覆蓋基板22之上表面24並填充粗糙表面特徵及/或凹部，例如凹部26。類似於圖1之基板12及16，在各種實施例中，基板22為作用中半導體基板、裝設基板(例如，印刷電路板)或用於電子裝置之封裝件之組件中的一或多者。 在以下揭示內容中，論述暫態液相接合之態樣及實施例。應理解，關於暫態液相接合揭示之材料、結構及技術亦可適用於暫態液相表面塗佈及/或封裝件密封的製程。 暫態液相(TLP)接合為多階段製程，藉此使多組份系統(例如，能夠形成二元合金之兩種金屬)接觸，加熱該多組份系統至高於相較於其他組份材料具有較低熔點之組份材料的熔點，接著將該多組份系統保持於一溫度歷時對於兩種材料而言足以相互分散的時間，藉此產生二元合金。 在一些實施例中，TLP接合結構可包括三種或三種以上組份。舉例而言，顆粒結構或分層結構可由至少一個層形成(或在顆粒結構之實施例中由核心形成)，該至少一個層由具有一種以上材料之合金形成。利用多於兩種材料之TLP接合結構之非限制性實例包括利用金與鉛錫合金之結構及利用鍺與鋁銅合金之結構。在一些實施例中，在合金為相較於比其他組份材料具有較低熔點的組份材料之處，合金可為共晶合金。 在一些實施例中，已發現需要的是達成較低熔融溫度材料之真實液化。此舉使得所得接合介面有效克服良好接合的難題(例如，裝置拓撲、表面粗糙度等)。 亦需要的是使較低熔點材料之液化發生，此係由於較低熔點組份以液相擴散至較高熔點組份中通常比較低熔點材料及較高熔點材料之固態相互擴散快幾個數量級。 若材料經正確地選擇且低熔融溫度組份及高熔融溫度組份之分率經恰當地選擇，則低熔點溫度組份層可與高熔融溫度組份充分合金化。所得合金化結構可接著相較於用以產生接合之組份具有較高熔點，此係由於低熔融溫度組份之全部已藉由擴散而合金化為更耐火混合物。 在本發明中用作實例之一種二元系統為銦金系統，其中銦為較低熔融溫度組份。存在將類似地表現之許多其他二元TLP組份系統，且本發明僅不限於涉及銦金系統之TLP結構及方法。 取決於所使用之材料，二元組份之間的金屬間化合物可甚至在室溫下或在加熱至低熔融溫度組份之熔點期間(但在低熔融溫度組份液化之前)不當地形成。過早金屬間化合物形成可不當地消耗低熔融溫度組份中之一些或全部，使得液化在保形地覆蓋接合區域內之拓撲/粗糙度時為低效的。 出於此原因，相當厚之低熔融溫度材料層在過去已使用以確保如下情形：儘管有進行中之低溫擴散，在TLP結構達到低熔融溫度組份之熔點時，剩餘足夠厚度的低溫熔融組份。 使用此等較厚之低熔融溫度組份層歸因於要求原子藉由擴散而移動之更長長度尺度而可需要接合歷時更長時間以在接合製程期間完成組份之相互擴散。 此外，較厚低熔融溫度組份層已被知曉為在接合製程達到熔點且施加力以進行接合時更易於「擠壓出」。 因此，可需要可經利用以形成一結構的TLP材料系統，該TLP材料系統將不過早地合金化，在接合期間將快速及/或完全地合金化，且在接合製程期間將不擠壓出。 在一些實施中，暫態液相接合為一多階段製程，該多階段製程利用多組份系統，例如，包括第一組份材料30及第二組份材料32的二元合金34(圖3)。第一組份材料30及第二組份材料32可皆為金屬。使第一組份材料30及第二組份材料32在低於第一組份材料30之熔點(例如，圖4中所說明之T1)及第二組份材料32之熔點(例如，圖4中所說明之T2)兩者之第一溫度(T，參見圖4)下接觸。兩種組份材料30、32經加熱至高於相較於其他組份材料30、32具有較低熔點(T1)之組份材料30、32之熔點的溫度。兩種組份材料30、32接著保持於一溫度歷時足以使兩種組份材料30、32相互分散的時間，例如，足以使較低熔點材料擴散至較高熔點材料中的時間，藉此產生合金34。 暫態液相接合之顯著益處為，所得合金可具有相較於用以進行接合之溫度較高的熔點。此是歸因於構成組份之相互擴散導致具有相較於較低熔點材料較高之熔點且在一些個例中較低熔點材料之熔點與較高熔點材料之熔點之間的熔點之合金。 在一些實施例中且作為實例，多組份系統包括複數個顆粒，其中銦(In，熔點為攝氏156.6度)用作位於每一顆粒之內部之金(Au，熔點為攝氏1,064度)核心外部的塗層。諸如銦之低熔點成分可經選擇以良好地潤濕且接合至所選擇之塗覆位點或基板及/或其他顆粒。 待合金化之複數個此等分層顆粒可(例如)置放於揮發性液體中以形成懸浮液，該懸浮液藉由旋塗、噴霧或絲網印刷安置於基板上。懸浮液之液體本質可提供有利特徵，諸如低塗覆/處理成本、低處理溫度、凹入特徵之保形填充等。 製備前述懸浮液可包括製備塗佈有與高熔點材料相互擴散之低熔點材料的高熔點材料之顆粒，藉此產生高熔點合金。此舉可(例如)經由溶凝膠製備繼之以無電塗佈來達成。替代地，製備此類顆粒可包括噴霧粉末形成、傳統之球磨研磨或其他小顆粒生產方法。 在一些實施例中，非氧化材料之額外層(例如，另一金層)可形成於銦層上方以防止或減小銦在接合之前的氧化。 在一些應用中，在低熔點材料與高熔點材料之間使用擴散障壁在意圖驅動反應為耐火合金的加熱材料之前可防止或減小過早擴散合金化。在前述顆粒結構實例中，擴散障壁層之中間塗層可設置於低熔點材料與高熔點材料之間以防止或減小其過早相互擴散。 前述顆粒及此類顆粒之塗覆(例如，以懸浮液)可提供多個優點。舉例而言，所得網路不會如同其他替代性環氧樹脂類塗覆方法一般具有要燒盡的助熔劑或殘餘有機材料。在另一實例中，並不需要依賴於基質中的機械接觸來得到傳導性(諸如在使用簡單金屬粒子懸浮液之應用中)。在又一實例中，具有如本文中所描述之一或多個特徵的顆粒可擴散焊接至易於與系統合金化的任何金屬。 在一些實施中，可擴展如本文中所描述之特徵中之一或多者以產生能夠用(例如)顆粒大小及塗佈厚度之適當選擇在相對低溫度下進行裝配的多孔導電網路。亦可利用本發明之一或多個特徵以組態具有多於二元功能性的系統。必要時，亦可利用本發明之一或多個特徵以組態並非導電及/或並不合金化的顆粒核心。 圖5說明具有核心102及塗層104以便形成二元系統的顆粒100。在一些實施例中，核心102之大小(例如，直徑d1、d2或d3)及/或塗層104之厚度(例如，厚度t1、t2或t3)可經選擇用於特定應用。此類所選擇之核心尺寸及塗層厚度可為平均值或在一些範圍內。舉例而言，核心尺寸及塗層厚度可經選擇，使得顆粒群體中核心材料及塗佈材料之相對量平均地足以在顆粒經充分合金化時形成相較於塗佈材料具有較高熔融溫度的合金。 在一些實施例中，顆粒100之核心102及塗層104的材料經選擇以產生二元合金化系統。在一些實施例中，塗層材料經選擇以具有低於核心材料之熔融溫度的熔融溫度。另外，由塗層104及核心102產生之合金可具有顯著高於塗層材料之熔融溫度的熔融溫度。在本文中所描述之各種實例中，核心102描述為係金(Au，熔點為攝氏1,064度)，且塗層104描述為係銦(In，熔點為攝氏156.6度)。然而，應理解，亦可利用材料之其他組合。可用於本文所揭示之各種實施例之其他材料系統的實例包括(但不限於)鋁(Al，熔點為攝氏660度)-鍺(Ge，熔點為攝氏938度)(共晶合金熔點為攝氏450度)、Au-矽(Si，熔點為攝氏1,414度)(共晶合金熔點為攝氏363度)、Au-錫(Sn，熔點為攝氏232度)(共晶合金熔點為攝氏217度)(93.7%Sn)及攝氏278度(29%Sn))、銅(Cu，熔點為攝氏1,085度)-Sn(共晶合金熔點為攝氏270度)、鉛(Pb，熔點為攝氏327度)-Sn(共晶合金熔點為攝氏183度)，及In-Sn(共晶合金熔點為攝氏120度)。具有除共晶組合物外之組合物的此等材料之合金相較於共晶組合物具有較高熔點。此等材料之至少一些合金具有比具有較低熔融溫度之組份之熔融溫度高的熔融溫度。為易於描述，本文中所揭示之態樣及實施例被描述為包括合金化組份Au與In，然而，應理解，此等其他合金系統中之任何一或多者可取代Au-In系統。 圖6展示，在一些實施例中，具有核心102及塗層104之顆粒100可進一步包括外層106，其經組態以(例如)防止或減小塗層104之氧化。此外層可由(例如)金形成。外層106在提供前述保護性功能性時足夠薄以允許塗層104被加熱。在一些實施例中，僅幾奈米厚(例如，小於約10奈米厚)之外層106提供足夠保護以免塗層104之氧化。如本文所描述，一旦經恰當地加熱，外層106及核心102可與塗層104形成合金。 在前述實例中，外層106描述為具有與核心102相同之材料。然而，應理解，外層106可由不同於核心102之材料形成。舉例而言，在一些實施例中，外層106可由一或多種材料形成，該一或多種材料包括(但不限於)鈦(Ti)、鉑(Pt)、鎳(Ni)、氧化銦(In2 O3 )、錫(Sn)或該一或多種材料之組合或合金。 圖7展示，在一些實施例中，具有核心102及塗層104之顆粒100可進一步包括安置於核心102與塗層104之間的障壁層108。舉例而言，此障壁層可經組態以防止或減小核心102與塗層104之間的過早相互擴散。 舉例而言，若使銦塗層104與金核心102直接接觸，則金屬間擴散可甚至在室溫下在每一顆粒內發生。使用諸如鈦(Ti)之擴散障壁層108可防止此過早相互擴散，卻不干擾在銦液化之後的所要相互擴散。借助於實例，具有在200Å至400Å之範圍內之厚度的鈦層可安置於銦層與金核心之間以防止或減小銦層與金核心的過早合金化。可用於障壁層之其他材料包括鉑(Pt)、鎳(Ni)、氧化銦(In2 O3 )、錫(Sn)，及前述材料的組合或合金。 圖4及圖8A至圖8C說明可利用諸如參看圖5至圖7描述之彼等顆粒的顆粒實施之合金化製程的實例。圖4展示隨著顆粒(例如，以懸浮液形式塗覆)經加熱之依據時間的溫度分佈50。圖8A至圖8C說明處於此加熱製程之各種階段的實例狀態。 在未加熱狀態120下，複數個顆粒100經展示以形成網路(圖8A)。舉例而言，此網路可藉由以懸浮液形式在基板之表面及/或特徵上塗覆顆粒100來形成。如本文所描述，顆粒100經展示以具有其各別核心102及塗層104。在此未加熱狀態下，顆粒100之溫度展示為T，且塗層處於未熔融形式。 當顆粒100之網路經加熱至大於塗層材料之熔融溫度T1但低於核心材料之熔融溫度T2的溫度時，塗層104在狀態130下展示為液化(圖8B)。塗層104之此液化材料132展示為在相鄰顆粒之間流動。在此經加熱狀態下，液化塗層材料132擴散至核心材料中。 當前述加熱溫度維持歷時足以允許前述擴散之時間時，可產生經合金化狀態140(圖8C)。在此狀態下，經合金化顆粒142經展示以形成網路。此經合金化網路被展示為具有顯著高於塗層102之材料之熔融溫度T1的熔融溫度T3。在所展示之實例中，經合金化顆粒142之網路之熔融溫度T3被展示為低於核心材料之熔融溫度T2。 在實例銦-金二元系統之上下文中，所得合金之熔融溫度T3取決於銦與金之相對量而發生變化。當銦在二元系統中之重量%為零時，則系統基本上為金，且其熔融溫度大約為攝氏1,064度。隨著銦之重量%增加，所得合金之熔融溫度減低，且在銦含量為約25重量%時達到約攝氏458度的谷值。隨著銦之重量%進一步增加，所得合金之熔融溫度增加且當銦含量為約37重量%時達到約攝氏510度的峰值。隨著銦之重量%進一步增加，所得合金之熔融溫度減低且當銦含量為約42重量%時達到約攝氏495度的谷值。隨著銦之重量%進一步增加，所得合金之熔融溫度增加且當銦含量為約54重量%時達到約攝氏541度的峰值。隨著銦之重量%進一步增加，當銦含量為100重量%時所得合金之熔融溫度減低至約攝氏156.6度的熔融溫度。 基於前述實例，可看出，存在銦-金合金(例如，低於50重量%之銦)之熔融溫度的大範圍，該範圍顯著地高於銦之熔融溫度(攝氏156.6度) (例如，大於或等於約攝氏458度)。在一些實施例中，顆粒中(且因此合金中)銦的量可基於諸如以下各者之因數來選擇：前述增大之(合金的)熔融溫度、合金的電學特性、所得合金網路之機械特性及/或合金化製程。 在具有金核心及銦塗層之實例顆粒之上下文中，且如參看圖5至圖7所描述，銦含量可藉由(例如)使塗層厚度 t1、t2、t3相對於核心直徑d1、d2、d3發生變化而發生變化。當銦塗層之厚度係在所要範圍(對於金核心之給定直徑而言)內時，在無顯著量之過量銦情況下可存在用於至金核心中之相對快速擴散製程的足夠量的銦。因此，塗層厚度t1、t2、t3及/或核心直徑d1、d2、d3可經調整以較佳產生此合金化製程。應理解，此等厚度及直徑值或範圍可為顆粒間之平均值或範圍。 請注意，若存在不足量之銦(例如，歸因於塗層過薄)，則合金層可形成於核心中，且合金化製程可在液化銦耗盡時自動終止。在此情形下，核心之內部部分可保持為高度導電的金。若加熱製程繼續長的時間，則銦可被進一步驅動至核心中；然而，此冗長製程在快速且低溫合金化製程中可能並非為所要的。 亦注意到，若存在過多銦(例如，歸因於塗層過厚)，則所得合金可具有較高電阻率。在一些應用中，合金之此較高電阻率可能為所要的或可能並非為所要的。另外，可存在並不擴散至核心中之過量銦，藉此導致銦回流。在此情形下，具有相對高電阻之過量銦可在涉及加熱之後續製程步驟期間在相對低溫度下非所要地熔融並回流。 在參看圖5至圖8C描述之各種實例中，顆粒100描繪為通常為球體的。圖9A至圖9C展示，具有如本文中所描述之一或多個特徵的顆粒100不必具有球體形狀。圖9A為類似於參看圖5至圖8C描述之實例的球體形狀實例顆粒100。圖9B展示具有通常圓形形狀(例如，橢球)而非球體形狀的實例顆粒100。如本文中所描述，此顆粒可包括核心部分102及塗層部分104。 圖9C展示，在一些實施例中，顆粒100不必要具有圓形形狀，且可包括諸如隅角之一或多個尖銳特徵。圖9C之實例顆粒100展示為具有多邊形截面形狀。如本文所描述，此顆粒可包括核心部分102及塗層部分104。應理解，具有如本文中所描述之一或多個特徵的顆粒可具有不同於所說明之形狀的形狀。另外，應理解，非球體顆粒亦可包括如圖6中所說明之塗層104及/或如圖7中所說明之障壁層108。 圖10說明可經實施以製造具有如本文中所描述之一或多個特徵之經塗佈顆粒的製程150。圖11A及圖11B展示此製程之實例狀態。 在區塊152中，提供或形成核心粒子。在圖11A中，以102描繪此等核心粒子中之一者。在區塊154中，塗層形成於核心粒子上。在圖11B中，塗層104描繪為形成於核心粒子102上。 圖12展示可經實施以塗覆具有如本文中所描述之一或多個特徵之顆粒的製程160。圖13A及圖13B展示此製程之實例狀態。 在區塊162中，於溶液中形成經塗佈顆粒之懸浮液。在圖13A中，以170描繪此懸浮液，其中經塗佈顆粒100懸浮於溶液172中。在區塊163中，可塗覆懸浮液。在圖13B中，懸浮液170描繪為自施配設備174施配於基板178上(箭頭176)。 圖14A展示，在一些實施例中，前述經塗佈顆粒之懸浮液塗覆至之基板可為半導體晶圓178。舉例而言，此塗覆可藉由自旋塗覆來達成，在該自旋塗覆中，晶圓178自旋，同時在晶圓178之中心處或靠近該中心塗覆懸浮液。歸因於晶圓178之自旋180，晶圓178上之懸浮液向外遷移(箭頭182)。 圖14B展示圖14A之自旋塗覆實例的側視圖。借助於實例，懸浮液可自施配設備188噴塗186於晶圓178之表面184的中心部分上。此經噴塗懸浮液可接著歸因於晶圓178之自旋向外移動。 在一些實施例中，晶圓可包括在單體化時將變為個別晶粒的單元190之陣列。圖14C展示此單元190之實例，其中(例如)接觸襯墊192及導電跡線194之導電特徵可由圖案化利用經塗佈顆粒如本文中所描述形成之導電層來形成。在其他實施例中，導電層由如下文(例如)參看圖26A至圖26C或圖27A至圖27C所描述之分層接合結構的實施例形成。此等導電特徵為形成於表面上之特徵的實例。在一些實施例中，經塗佈顆粒亦可用以填充或塗佈三維特徵，諸如在諸如晶圓、封裝基板(例如，層壓基板及陶瓷基板)及電路板之基板中的介層孔、凹部、側壁等。下文更詳細地描述此等塗覆之實例。 圖15A至圖15F說明可使用具有如本文中所描述之一或多個特徵之經塗佈顆粒形成之導電特徵的非限制性實例。如本文所描述，此等導電特徵可用以將部分結合在一起以形成導電路徑或層或其任何組合。 在圖15A之實例組態200中，導電層204可用以將組件206(例如，晶粒、表面黏著技術(SMT)裝置等)裝設於基板202(例如，封裝基板)上。為了達成此裝設，未合金化顆粒之層可形成於基板202上，繼之以組件206之定位。總成接著可被加熱至高於如本文中所描述之塗層之熔融溫度的低溫度，以藉此在基板202與組件206之間形成合金層。 在圖15B之實例組態210中，導電層214形成於下伏結構212上。借助於非限制性實例，結構212可為實施於封裝基板上之包覆模製結構，且此導電層214可用作射頻(RF)屏蔽件。此導電層可經由(例如)屏蔽焊線、導電組件、側壁中之一或多者上之導電層或其任何組合電連接至封裝基板內之接地平面(未圖示)。 圖15C及圖15D展示如本文中所描述形成之導電層可符合三維表面之實例。在圖15C之實例組態220中，形成有如本文中所描述之經塗佈顆粒的導電層224可符合由結構222定義的凹部226。舉例而言，此結構可為形成於封裝基板上方之包覆模製結構。借助於實例，凹部226可形成於包覆模製結構之上表面上以暴露組件(未圖示)之上表面，該組件經組態以提供其上表面與封裝基板(例如，至其中之接地平面)之間的電連接。一旦此上表面被暴露，則可形成導電層224，且此層可符合包覆模製結構及凹部226之上表面的輪廓。在一些實施例中，此保形導電層224可用作RF屏蔽件。 在圖15D之實例組態230中，形成有如本文中所描述之經塗佈顆粒的導電層234可符合封裝件232之上表面及側表面。舉例而言，此封裝件可包括包覆模製件與封裝基板之組合，其中一或多種組件裝設於封裝基板上且由包覆模製件囊封。在一些實施例中，具有此保形導電層234之盒狀模組可覆蓋六個側中之除底側(其用以裝設至例如電路板)外的五個側。此保形導電層234可經由(例如)暴露至未經塗佈側壁之導電特徵電連接至封裝基板內之接地平面。在一些實施例中，封裝基板可為層壓基板，或諸如低溫共燒陶瓷(LTCC)基板的陶瓷基板。在一些實施例中，此封裝基板之上部部分可包括包覆模製結構(諸如在圖15D之實例中)。在其他實施例中，保形導電層亦可覆蓋無包覆模製結構的組件及特徵以及封裝基板的側壁。 圖15E及圖15F展示具有如本文中所描述之一或多個特徵的經塗佈顆粒可用以形成導電介層孔的實例。在圖15E之實例組態240中，可藉由形成由如本文中所描述之經塗佈顆粒的合金化產生之層244使得形成於基板242之上部側與下部側(例如，晶圓、封裝基板之一或多個層等)之間的介層孔246為導電的。在圖15F之實例組態250中，基板252之上部側與下部側(例如，晶圓、封裝基板之一或多個層等)之間的介層孔256可填充有由如本文中所描述之經塗佈顆粒的合金化產生之導電材料。 在一些實施例中，暫態液相接合之方法可用以產生圍繞封裝件中之電子或機電組件之氣密密封件。此情形之一個實例說明於圖16A及圖16B中，在圖16A及圖16B中，暫態液相接合之方法用以密封用於裝置312之封裝件300。在說明於圖16A及圖16B中之實例中，藉由能夠在基板302、304之間形成暫態液相接合之材料結構，例如，上文所揭示之經塗佈顆粒或下文揭示之分層結構形成例如半導體基板之基底基板302與例如玻璃、藍寶石或半導體基板之頂蓋基板304之間的接合。TLP材料結構308沈積於基板302、304中之一者(或二者)上以形成閉合之幾何形狀，例如，說明於圖16A中之矩形306，該閉合之幾何形狀包封裝設有例如微機電系統(MEMS)裝置、表面聲波(SAW)裝置、主體聲波(BAW)裝置或膜主體聲波(FBAW)裝置之裝置312的區域或凹穴310。將基板302、304帶至一起，且將TLP材料結構308加熱至高於TLP材料結構308中較低熔點材料之熔融溫度的溫度。TLP材料結構308之溫度維持於高於較低熔點材料之熔融溫度的溫度或維持高於該溫度，直至TLP材料結構308之材料至少部分或完全地相互分散以形成合金。所得合金形成圍繞安設有裝置312之區域或凹穴310的氣密密封件。 在一些實施例中，如圖17A及圖17B中所說明，一種暫態液相接合方法可用以將裝置322裝設於基板320上以形成結構305。用能夠在基板320與裝置322之間形成暫態液相接合之材料結構形成例如半導體基板或印刷電路板之基板320與裝置322之間的接合，該等材料結構係例如上文所揭示之經塗佈顆粒或下文所揭示之分層結構。TLP材料結構324沈積於基板320之上表面之一部分上及/或裝置322之下表面上。將基板320及裝置322帶至一起，且將TLP材料結構324加熱至高於TLP材料結構324中較低熔點材料之熔融溫度的溫度。TLP材料結構324之溫度維持於高於較低熔點材料之熔融溫度的溫度或維持高於該溫度，直至TLP材料結構324之材料至少部分或完全相互擴散以形成合金。所得合金形成裝置322與基板320之間的導電且導熱接合。 在一些實施例中，例如，如圖18A及圖18B中所說明，形成於裝置322與基板320之間的接合用以形成電觸點(例如，裝置322與基板320上的接合墊)之間的一或多個電路徑。在此等實施例中，替代如圖17A及圖17B中大體上覆蓋裝置322與基板320之間的整個區域，TLP材料結構324沈積於裝置322之下表面及/或基板320之上表面上的複數個分離之區域上。至少一個電觸點在分離區域中之至少一者內安置於基板320之上表面上及裝置322之下表面上。 在一些實施例中，圖16A及圖16B之裝置312可使用如說明於圖17A及圖17B或圖18A及圖18B中任一者中之方法接合至基板302。TLP材料結構可因此用以形成封裝件300中之裝置312的氣密密封件，且用於提供裝置312及基板302上之電觸點之間的電連通。 接合兩個基板之表面之方法說明於圖19至圖22中。圖19於330處說明待結合之第一基板332及第二基板342。第一金層334沈積於第一基板332之所說明表面上，且第二金層344沈積於第二基板342之所說明表面上。說明為一對金凸塊336a、336b之表面不規則性呈現於第一金層334之上表面上，與安置於第一基板332之所說明表面上之第一金層334的表面相對。第一金層334及第二金層344具有範圍可介於約10 nm與約10 µm之間的厚度，儘管本文中所揭示之實施例不限於具有具任何特定厚度之金層。 在圖20中，例如銦之接合材料層352已被添加至與安置於第二基板342之所說明表面上之第二金層344之表面相對的第二金層344之下表面上以形成結構350。銦可由實體或化學沈積製程、電鍍製程或此項技術中已知之任何其他金屬沈積製程來添加。 圖21說明結構360，該結構係由結構350藉由將基板帶至一起使得接合材料層352與第一金層334接觸且將接合材料層352加熱至使其熔融且符合第一金層334之上表面之溫度，從而形成熔融之接合層362來形成。結構360維持於高溫歷時足以使來自第一金層334及來自第二金層344之金及銦相互擴散以形成結構370中之合金接合層372的時間段。形成合金接合層之高溫在一些實施例中高於銦之熔融溫度且低於金之熔融溫度。在其他實施例中，形成合金接合層之高溫低於銦之熔融溫度。在形成合金接合層372之後便移除熱。 說明於圖19至圖22中之方法可遭受數個缺點。舉例而言，若待接合至第一金層334之銦的表面保持未被覆蓋且暴露至空氣，則銦的表面可形成可干擾接合製程之氧化銦表面層。另外，第二金層344中之金可與銦層352相互擴散以在接合製程之前或在加熱至所要接合溫度期間形成金銦合金，從而減小可用於形成所要接合之未合金化之銦的量。 接合一對基板之另一方法說明於圖23A至圖23D中。圖23A說明待結合之該對基板332、342。類似於圖19之基板332，第一基板332具有第一金層334，該第一金層包括沈積於其上之金凸塊336a及336b。類似於圖19之基板342，第二基板342具有沈積於其上之第二金層344。圖23A之第二基板342亦具有沈積於第二金層344上之例如銦的第二接合材料之層380及沈積於接合材料層上之第三金層382。圖23A之接合材料層380薄於說明於圖20中之接合材料層352。圖23B說明經對準用於接合之第一基板332及第二基板342。 沈積於接合材料層380上之第三金層382密封接合材料層380以免受氛圍影響，從而減小或消除接合材料層380形成表面氧化物的傾向。在一些實施例中，第三金層382可為至少約15奈米厚以提供接合材料層380之表面之氧化的可接受抑制。然而，室溫擴散或隨著圖23B之結構經加熱至接合溫度之擴散使得來自第二金層344且來自第三金層382之金與接合層之材料相互擴散，從而形成一合金化材料，例如，如圖23C中所說明的AuIn2 。此效應在較薄而非較厚接合材料層之情況下為更明顯的。若接合材料層過薄，或若相互擴散發生的時間過長或在過高溫度下發生，則整個接合材料層380可被合金化。 由金與接合材料之相互擴散形成之合金層384可具有高於純接合材料之熔融溫度，如同金-銦系統中之狀況一般。在一些實施例中，合金層384因此將不在所要接合溫度下熔融，且如圖23D中所說明將不流動以符合第一金層334之表面。一些相互擴散可發生於合金層384與金凸塊336a、336b之間，但合金層將不接合至第一金層334之表面的剩餘部分，從而致使第一基板332與第二基板334之間的接合為弱的。 圖24A說明類似於圖23A之基板及接合層結構的基板及接合層結構之組態。然而，在圖24A中，接合材料層390厚於圖23A中之接合材料層380。在圖24A之結構中，較厚之接合材料層390可防止接合層之完全合金化。第一合金層394及第二合金層396可分別藉由接合材料層之材料與第二金層344及第三金層392之相互擴散來形成，但未經合金化之接合材料的層可保持於接合材料層內，如圖24B中所說明。未合金化之接合材料在所要接合溫度下熔融，且圍繞第一金層334中之金凸塊流動，從而在基板332、342之間形成保形接合，如圖24C中所展示。未合金化之接合材料藉由接合材料與金層之間的額外相互擴散在接合製程期間合金化，從而導致合金化之接合材料層398，如圖24C中所說明。所得接合歸因於合金化接合材料與第一金層334之間的增加之接觸面積而比圖23D中所說明的接合更強。 用於接合一對基板之另一方法及關聯結構說明於圖25A至圖25C中。在圖25A中，第一基板332及第一金層334以及第二基板342及第二金層344類似於說明於圖19、圖23A及圖24A中的彼等。例如銦層之接合材料層400為類似於圖23A之接合材料層380的薄層。銦層可僅具有在達成液態之前不完全地合金化及/或產生足夠多之液體銦以對第一金層334上之表面不規則性提供保形覆蓋所必要的厚度。不同於展示於圖23A中之結構，上部擴散障壁層402(亦被稱作「障壁層」)沈積於接合材料層400與第二金層344之間，且下部擴散障壁層404(亦被稱作「障壁層」)沈積於接合材料層之與形成有上部擴散障壁層402之表面相對的下表面上。上部擴散障壁層402由抑制或阻斷來自第二金層344之金擴散至接合材料層400中之材料形成。下部擴散障壁層404由密封接合材料層免受氛圍影響以抑制或消除接合材料層400之表面之氧化的材料形成，該表面將接合至第一金層334。上部擴散障壁層402及下部擴散障壁層404由並不與接合材料層400之材料快速地相互擴散之材料形成，或至少由以慢於金之速率的速率與接合材料層之材料相互擴散的材料形成。上部擴散障壁層402及下部擴散障壁層404之障壁材料及厚度經適當地選擇以減小二元系統之非所要低溫過早合金化。在一些實施例中，上部擴散障壁層402及下部擴散障壁層404可具有約15奈米或15奈米以上之厚度，且提供接合結構之組份材料與氧至接合材料層400之擴散的可接受抑制。在圖25A及圖25B中，上部擴散障壁層402及下部擴散障壁層404說明為由相同材料(即鉑)形成。在其他實施例中，上部擴散障壁層402及下部擴散障壁層404由不同材料形成。舉例而言，用於上部擴散障壁層402及/或下部擴散障壁層404之合適材料包括鈦、鉑、鎳、氧化銦、錫及其組合。 相較於圖24B如在圖25B中所說明，隨著包括接合材料層400以及上部擴散障壁層402及下部擴散障壁層404之接合結構經加熱且與第一金層接觸，抑制接合材料層400之過早合金化。未經合金化之接合材料因此熔融且圍繞第一金層334中之凸塊流動以與第一金層334形成保形接合。在維持於合適溫度歷時允許上部擴散障壁層402及下部擴散障壁層404之材料及來自第一金層334及第二金層344之金與接合材料之層的材料相互擴散之後，產生圖25C之經接合結構。此結構包括保形地接合至第一金層334及第二金層344兩者之經合金化接合層。 根據本文中所揭示之另一態樣，暫態液相接合係用如圖26A至圖26C中所說明之包括一或多個接合組份之一或多個經堆疊膜的接合結構執行。經堆疊膜可為大體上平坦的。經堆疊膜包括多個插入之高熔點材料層及低熔點材料層而非單一對較厚層。在圖26A中，較高熔點材料層說明為金層412、416，且較低熔點接合材料層說明為銦層410、414。每一接合材料層410、414中之接合材料的量可小於在一對基板之間形成保形接合所需的量，然而，多層接合材料中接合材料之總量經選擇以足以提供基板之間的保形接合。接合材料(例如，銦)層410、414可僅具有在達成液態之前並不充分合金化及/或產生足夠液相接合材料以對第一金層334上之表面不規則性提供保形覆蓋所必要的厚度。高熔點材料層412、416可僅具有提供足夠材料以與接合材料層410、414中之充分數量之接合材料充分合金化所必要的厚度。 在提供包括複數個較薄高熔點材料層及接合材料層(而非安置於較高熔點材料層之間的單一較厚接合材料層)的接合結構時接合將更快地發生，此係因為擴散(或相互擴散)必須僅通過較薄之材料層進行以達成接合結構的完全合金化。另外，在說明於圖26A中之較高熔點材料層(金層344、412、416)設置於接合材料層410、414之上表面與下表面兩者上的結構中，較高熔點材料與接合材料層410、414之材料的相互擴散自接合材料層410、414的兩側進行。在一些實施例中，圖26A之接合結構之充分合金化可在約攝氏270度下在少達約10分鐘與15分鐘間的時間發生。此舉與傳統金-金熱壓接合形成對比，該金-金熱壓接合可需要加熱至約攝氏400度歷時約30分鐘。圖26A之接合結構因此將較少熱能引入至經歷接合中之裝置或基板中，從而導致所形成裝置或基板中材料擴散的較少問題，該問題原可能減小裝置或所得經接合組件之可靠性。 提供包括複數個較薄之高熔點材料層及複數個接合材料層(而非安置於較高熔點材料層之間的單一較厚接合材料層)之接合結構的另一優點為接合材料層中之較薄低熔點材料層歸因於較薄膜中之更高黏力將不大可能在接合期間「擠壓出」所要接合區域。 如圖26A中進一步說明，在一些實施例中，障壁層418a、418b、418c、418d安置於高熔點材料(金層344、412及416)與接合材料層(銦層410、414)之間的每一介面處。障壁材料及厚度經恰當地選擇以減小二元系統(金層及銦層)之非所要之低溫過早合金化。圖26A之接合結構中層的材料及厚度經進一步選擇以給出在高溫下合金化之適當速率，該高溫例如為處於或高於接合材料層之低熔融溫度材料之熔點的溫度。障壁層在各種實施例中由以下各者中之一或多者形成：(例如)鈦、鉑、鎳、氧化銦、錫或其組合。 接合材料(例如，銦)層410、414可僅具有在達成液態之前並不充分合金化及/或產生足夠液相接合材料以對第一金層334上之表面不規則性提供保形覆蓋所必要的厚度。高熔點材料層412、416可僅具有提供足夠材料以與接合材料層410、414中之全部量之接合材料充分合金化所必要的厚度。在一些實施例中，障壁層418a、418b、418c、418d可具有約15奈米或15奈米以上之厚度，且提供接合結構之組份材料及氧至接合材料層420、424中之擴散的可接受抑制。 如圖26B中所說明，隨著包括層410、412、414及416之接合結構經加熱且與第一金層334接觸，接合材料層熔融且接合結構形成與第一金層334之保形接合。保形接合之形成可至少部分藉由薄的高熔融溫度材料層412、416圍繞第一金層334中諸如所說明凸塊之表面不規則性變形而發生。另外或替代地，來自接合材料層410、414之熔融材料可圍繞第一金層334中之表面不規則性流動以形成保形接合。如圖26C中所說明，接合結構維持於適合於形成保形地接合至第一金層334及第二金層344之經合金化接合層418的一溫度及時間，從而將此等層及沈積金層334、344所在之任何基板、裝置或組件接合在一起。 圖27A至圖27C說明包括多個高熔融溫度材料層344、422及多個較低熔融溫度接合材料層420、424以及可選之障壁層426a、426b、426c、426d的接合結構可如何在第二基板342與材料層(例如安置於第一基板332上之第一金層334) (其上表面428上具有呈台階430之形式的不規則性)之上表面428之間形成保形接合。 圖27A說明安置於第二基板342上且在上面安置有接合結構之第二金層344，該接合結構具有多個高熔融溫度材料層344、422，多個較低熔融溫度接合材料層420、424，及安置於高熔融溫度材料層344、422與較低熔融溫度接合材料層420、424之間的界面處之障壁層426a、426b、426c、426d。此結構類似於說明於圖26A中之結構，唯較低高熔融溫度材料層(金層416)被省略。 如圖27B中所說明，隨著接合結構與第一金層334接觸且加熱，高熔融溫度材料層422變形且熔融之低熔融溫度接合材料流動以將第二金層344保形地接合至第一金層334之兩個表面428及430上的(例如)區432中的帶台階表面。如圖27C中所說明，接合結構維持於適合於形成保形地接合至第一金層334及第二金層344之經合金化接合層434的一溫度及時間，從而將此等層及沈積有金層334、344之任何基板、裝置或組件接合在一起。 在圖26A及圖27A中，說明包括數對接合材料層之接合結構。應理解，在其他實施例中，可提供例如銦層之超過兩個接合材料層，該等接合材料層藉由例如金層之較高熔融溫度材料層及視需要設置於接合材料層與較高熔點材料層之間的障壁材料層分離。舉例而言，在一些實施例中，可提供三個或多於三個之接合材料層以及關聯之較高熔融溫度材料層及障壁層。 應理解，儘管參看圖19至圖27C描述之結構及方法描述為用以將一個基板接合至另一基板，但此等接合結構及方法同樣適用於將裝置或組件接合至電子系統之基板或另一裝置或組件及/或用於電子裝置或系統之封裝件的組件。 在一些實施例中，參看圖19至圖27C描述之結構及方法中之各種材料層中的高溫熔點材料及較低熔點接合材料之相對量可經選擇，使得形成最終經合金化接合層，該最終經合金化接合層在所揭示之接合結構中包括相同相對量之高溫熔融材料及較低熔點接合材料且具有在較低熔點接合材料之熔點與較高熔點材料之熔點之間的熔點。舉例而言，在展示於圖26A至圖26C中之實施例中，層410及414中銦之總量與層412及416中金之總量的比率可經選擇，使得經合金化接合層418具有在銦之熔融溫度與金之熔融溫度之間的熔融溫度。在一些實施例中，金層412、416中金的量可經選擇以小於將提供最終經合金化層418中金與銦之所要比率的金的量，以考慮到將自第一金層334及第二金層344中之一者或兩者擴散至經合金化接合層中且提供經合金化接合層418中所要之銦與金比率的額外金。 用於形成如本文中所揭示之接合結構的通常指示於500處之方法說明於圖28中。在動作502處，提供一基板。在各種實施例中，基板可包括裝設基板，例如，印刷電路板或用於電子裝置之封裝件之組件；或可包括電子裝置或組件之表面。在動作504中，第一二元組份層形成於基板上。第一二元組份可為相較於將隨後沈積之第二二元組份具有較高熔融溫度的材料。第一二元組份層可為金層，例如，說明於圖26A及圖27A中之層344。形成第一二元組份層以及包括於本文中所揭示之各種結構及方法中之其他材料層可藉由物理氣相沈積(濺鍍或蒸鍍沈積)、化學氣相沈積、電鍍、絲網印刷或此項技術中已知之任何其他材料沈積方法來實現。 在動作506中，障壁層形成於第一二元組份層上。舉例而言，障壁層可包括鈦、鉑、鎳、氧化銦、錫或其組合。舉例而言，障壁層可為說明於圖26A中之障壁層418a或說明於圖27A中的障壁層426a。 在動作508處，第二二元組份層形成於在動作506中沈積之障壁層上。第二二元組份層包括相較於第一二元組份層之材料具有較低熔融溫度的材料，或由該材料組成。舉例而言，若第一二元組份層由金形成，則第二二元組份層可由銦形成。第二二元組份層可為(例如)說明於圖26A中之層410或說明於圖27A中的層420。 在動作510處，第二障壁層形成於在動作508中沈積之第二二元組份層上。第二障壁層就材料及/或厚度而言類似或相同於在動作506中沈積之障壁層。第二障壁層可為(例如)說明於圖26A中之障壁層418b或說明於圖27A中之障壁層426b。 在動作512中，另一(第二)第一二元組份層形成於第二障壁層上。另一第一二元組份層就材料及/或厚度而言可類似或相同於在動作504中沈積的第一二元組份層。另一第一二元組份層可為(例如)說明於圖26A中之層412或說明於圖27A中的層422。 在動作514中，第三障壁層形成於另一第一二元組份層上。第三障壁層就材料及/或厚度而言可類似或相同於在動作506中沈積之障壁層。第三障壁層可為(例如)說明於圖26A中之障壁層418c或說明於圖27A中的障壁層426c。 在動作516中，另一(第二)第二二元組份層形成於在動作514中沈積之障壁層上。另一第二二元組份層就材料及/或厚度而言可類似或相同於在動作508中沈積之第二二元組份層。另一第二二元組份層可為(例如)說明於圖26A中之層414或說明於圖27A中的層424。 在動作518中，第四障壁層形成於另一第二二元組份層上。第四障壁層就材料及/或厚度而言可類似或相同於在動作506中沈積之障壁層。第四障壁層可為(例如)說明於圖26A中之障壁層418d或說明於圖27A中的障壁層426d。 圖29說明通常以520指示之形成接合結構之另一方法的流程圖。圖29之方法之動作522、524、526、528、530、532、534、536及538分別對應於圖28之方法的動作502、504、506、508、510、512、514、516及518。圖29之方法具體而言指示，第一二元組份層之材料為金，且第二二元組份層之材料為銦。圖29之方法之障壁層就材料及厚度而言可類似或相同於圖28之方法中的障壁層。 圖30及圖31分別說明通常以540及560指示的接合第一總成至第二總成之方法之流程圖。在一些實施例中，第一總成及第二總成中之一者或兩者包括基板，例如，可包括主動裝置之半導體基板、印刷電路板或用於電子裝置之封裝件之組件。在其他實施例中，第一總成及第二總成中之一者或兩者包括電子裝置、裝置封裝件及/或電子系統的其他組件。第一總成及第二總成不限於具有任何特定類型。 在方法540之動作542中，提供在基板上具有第一二元組份層之第一總成。第一二元組份層在一些實施例中為金層(參見方法560之動作562)。在方法540之動作544中，提供在基板上具有複數個二元層之第二總成。動作544可包括用於形成複數個二元層的子步驟，例如，分別為方法500及520之動作502至518或動作522至538中之一或多者。複數個二元層在一些實施例中為包括複數個金層及銦層之結構(參見方法560之動作564，及說明於圖26A及圖27A中之結構)。 在方法540之動作546及方法560之動作566中，第二總成與第一總成相抵地定位。在方法540之動作548中，第一總成及第二總成經加熱至高於第二二元組份之熔點但低於第一二元組份之熔點的溫度。在一些實施例中，溫度高於銦之熔點但低於金之熔點(參見方法560之動作568)。 在方法540之動作550中，總成之溫度經維持以促進第一二元組份與第二二元組份之相互擴散以由第一二元組份及第二二元組份形成合金。在一些實施例中，合金由金與銦之相互擴散形成(參見方法560之動作570)。 包括TLP接合之製造製程上的可變性可影響由用以形成TLP接合之材料形成之接合的品質。在一些實施例中，所要最終接合由一量的例如銦之較低熔點材料及一量的例如金之較高熔點材料形成，此舉導致保形接合形成於基板上，其中經合金化之接合材料為第一材料與第二材料之化學計量金屬間合金，例如，AuIn2 。如在本文中使用該術語，化學計量金屬間合金為具有化學式Aa Bb 之合金，其中A 及B 為金屬，且a 及b 兩者可表達為整數。化學計量金屬間合金亦可包括具有化學式Aa Bb Cc 之三元合金系統，其中A 、 B 及C 中之每一者為金屬，且a 、 b 及c 中之每一者可表達為整數。化學計量金屬間合金亦可包括具有超過三個金屬組份之合金。 由一量之例如銦之較低熔點材料及一量之例如金之較高熔點材料形成之接合在(例如)圖24C及圖27C中說明，該結合導致保形接合於基板上方之形成，其中經合金化之接合材料為第一材料與第二材料之化學計量金屬間合金。若存在過少低熔點材料，則所得接合元件可類似於展示於圖23D中之接合元件，其中存在不足量之低熔點材料以圍繞下部基板334中之表面缺陷336a、336b流動，從而致使最終接合不保形於下部基板且因此相較於說明於圖24C或圖27C中之接合為較弱。若存在過量之低熔點材料，則包括較高量之較低熔點材料(例如，具有大於化學計量金屬間合金之量的量之較低熔點材料)之相可保持於成品接合中。此說明於圖32中。在圖32中，在接合之前在接合元件中存在過量之銦805或替代地在金層810a、810b及810c中存在不足之金而不能在接合期間貫穿整個經接合元件815形成AuIn2 金屬間化合物。結果，經接合元件815包括安置於AuIn2 金屬間化合物層820之間的富銦層825。富銦層825相較於AuIn2 金屬間化合物層820具有較低熔融溫度，因此富銦層825可在包括經接合元件815之裝置或封裝件之後續處理期間熔融並回流，從而潛在地引起經接合元件815的失效或銦遷移至非所要位置，從而潛在地導致可靠性問題。 為了提防可導致非理想接合元件為存在於接合裝置或封裝件中之接合元件的唯一形式之製程變化及/或偏離目標製程(諸如說明於圖23D或圖32中之彼等)，可故意地以低熔點材料與高熔點材料之不同比率形成冗餘接合元件。甚至在製程可變性的情況下，冗餘接合元件中之一者將很可能具有類似於說明於圖24C或圖27C中之所要結構的結構，包括保形地形成之化學計量金屬間合金，即使其他經接合元件中之一或多者具有較不合意之結構，例如，如圖23D或圖32中所說明。 可以各種方式形成相較於與較低熔點材料形成化學計量合金必要的量(給定「目標」製程)具有有意地較高量之可用較高熔點材料的接合元件。在第一實例中，如圖33A中所說明，接合材料元素可形成有結構830，該結構830包括相對於互補結構835中之較低熔點材料805之體積的過量體積的較高熔點材料810。由結構830及835中之材料之相互擴散形成的經接合元件840相較於化學計量合金可具有過量之較高熔點材料810。所得合金可因過量之較高熔點材料而為非化學計量的(例如，AuIn(x＜2) ，如圖33A中所說明)。在各種實施例中，結構830、835可呈如圖33B中所說明之狹長結構之形式，或呈如圖33C中所說明之環形結構之形式，或其組合。在一些實施例中，當經接合元件840意欲用於形成與裝置之電接觸時，圖33C中說明之結構可適合於使用。 可以各種方式形成具有恰當或大致恰當量之可用較高熔點材料(給定「目標」製程)以與較低熔點材料形成化學計量合金之接合元件。在第一實例中，如圖34A中所說明，具有包括較高熔點材料810之結構845的接合材料結構包括相對於互補結構850中之較低熔點材料805之體積的足夠體積之較高熔點材料810，使得藉由結構845、850中材料之相互擴散形成的所得經接合元件855具有恰當或大致恰當量之較高熔點材料810以形成大體上或完全為化學計量金屬間合金的經接合元件。在各種實施例中，結構845、850可呈如圖34B中所說明之狹長結構之形式，或呈如圖34C中所說明之環形結構之形式，或其組合。在一些實施例中，當經接合元件855意欲用於形成與裝置之電接觸時，圖34C中說明之結構可適合於使用。在圖34C中，結構845具有與結構850大體相同之直徑，且位於結構850下方，且因此不可見。 可以各種方式形成相較於與較低熔點材料形成化學計量合金必要的量(給定「目標」製程)具有有意地較低量之可用較高熔點材料的接合元件。在第一實例中，如圖35A中所說明，接合材料元素可形成有結構860，該結構860包括以相對於互補結構865中之較低熔點材料805之量不足的量存在之較高熔點材料810，使得由結構860、865中之材料之相互擴散形成之所得經接合元件870可不在整個經接合元件870中形成化學計量金屬間合金。如圖35A中所說明，經接合元件870可具有包括化學計量金屬間合金875之一或多個部分及包括相較於化學計量金屬間合金875更富下部熔點材料805的一或多個部分880。在各種實施例中，結構860、865可呈如圖35B中所說明之狹長結構之形式，或呈圖35C中所說明之環形結構之形式，或其組合。在一些實施例中，當經接合元件870意欲用於形成與裝置之電接觸時，圖35C中說明之結構可適合於使用。 在其他實施例中，較低熔點材料及較高熔點材料在TLP接合中之相對量可藉由選擇鄰接接合元件之間的距離來控制。在接合期間，較低熔點材料及較高熔點材料僅擴散有限距離，且因此僅在TLP接合結構之某距離內的材料可用於與TLP接合結構之材料相互擴散。舉例而言，圖36A及圖36B說明包括較低熔點材料805之一對接合結構885，該對接合結構在其經接合至之具有較高熔點材料810之膜890上靠近於彼此地隔開。接合結構885足夠靠近地隔開，以至於在較低熔點材料805及較高熔點材料810在接合期間可相互擴散的距離內在膜890中存在不足量之較高熔點材料810，使得不能在整個經接合元件895內形成化學計量金屬間合金。經接合元件895因此包括相較於化學計量金屬間合金更富較低熔點材料之數個部分900。在相較於接合結構885自鄰接接合結構進一步隔開之包括較低熔點材料805的另一接合結構905中，在膜890中在足夠短以使較低熔點材料805及較高熔點材料810在接合期間相互擴散的距離內有足夠量之較高熔點材料810可用，以在整個或大體上整個經接合元件910內形成化學計量合金。 在一些實施例中，複數個TLP結合層元件可用以提供圍繞裝置之區域之冗餘密封，該複數個TLP接合層元件中之至少兩者具有較低熔點材料與較高熔點材料之不同目標比率。舉例而言，類似於展示於圖16A及圖16B中之裝置封裝件的裝置封裝件可具備多個TLP接合元件308，其圍繞裝置形成例如環或矩形之閉合形狀以圍繞裝置312形成氣密地密封之凹穴。此情形之實例說明於圖37A及圖37B中。如所說明，封裝件300'包括圍繞裝置312之三個矩形TLP接合元件306A、306B及306C。元件306A、306B及306C中之至少兩者具有較低熔點材料與較高熔點材料之不同比率。舉例而言，最內TLP接合元件306A可具有較低熔點材料與較高熔點材料(例如，銦與金)之目標比率，此舉導致形成經接合元件之元件306A完全由例如AuIn2 之化學計量金屬間合金構成。元件306B及306C中之一者相較於元件306A可具有較低熔點材料與較高熔點材料之較大比率，且元件306B及306C中之另一者相較於元件306A可具有較低熔點材料與較高熔點材料之較低比率。若用於形成TLP接合元件306A、306B及306C之製程符合目標，則元件306A將形成經接合元件，該經接合元件由在凹穴310中氣密地密封裝置312之化學計量金屬間合金組成。若製造製程稍微偏離目標且多於或少於所要量之較低熔點材料及較高熔點材料中之一者經沈積使得結構306A中此等材料之比率並非所要，則元件306B或306C中之一者可更接近於具有較低熔點材料及較高熔點材料之所要比率且將形成強接合結構以氣密地密封裝置312於凹穴內。儘管三個TLP接合元件說明於圖37A及圖37B中，但應瞭解，多於三個或少於三個TLP接合元件可用於不同實施例中。 在更富低熔點材料之TLP接合元件中，低熔點材料可具有在接合製程期間自TLP接合元件向外流動之傾向。另外，在富有低熔點材料之TLP接合元件中，經接合元件可包括如下部分：富有較低熔點材料，且相較於經接合元件之剩餘部分具有較低熔點且在操作或進一步處理期間可熔融並流動。可能需要的是形成具有一或多個特徵之TLP接合元件，該一或多個特徵阻礙經熔融較低熔點材料流動到非所要位置上或流向非所要位置，例如朝向封裝件中之裝置或接合墊，在該等處熔融材料可干擾裝置之操作。在一些實施例中，例如，如圖38中所說明，包括以下各者之接合元件具備具較高熔點材料之突起810d：包括較高熔點材料(例如，金)層810a、810b及較低熔點材料(例如，銦)層805的部分885；及包括較高熔點材料層810c之部分890。突起810d說明為在部分890之頂部上，但可替代地或另外設置於層810b之底部上。當將部分885及890帶至一起並予以加熱時，較低熔點材料熔融且與較高熔點材料相互擴散以形成經接合元件895。若接合元件相較於在整個經接合元件895中形成化學計量金屬間合金(例如，AuIn2 )的必要量具有較多的較低熔點材料，則經接合元件可包括化學計量金屬間合金物之部分900及相較於化學計量金屬間合金更富低熔點材料之部分905。突起810d促進在接合期間熔融之較低熔點材料及/或部分900之在操作期間可熔融之數個部分在形成經接合元件895同時或在形成該經接合元件之後在預定義方向上脫離經接合元件895之流動。突起810d提供可與過量較低熔點材料相互擴散之較高熔點材料之額外來源，其中突起810d存在以在存在突起810d之處或圍繞該突起存在之區形成化學計量金屬間合金。突起810d可因此密封經接合元件895之一側，使得無熔融材料可自經密封側外逸。熔融材料因此優先或獨佔地可在圖38中之箭頭A的方向上自與存在突起810d之側相對的側自經接合元件895外逸。應被保護以在接合期間及/或在操作期間不與來自經接合元件之熔融材料接觸之裝置、接合墊或其他結構可定位於經接合元件895之與熔融材料可優先或獨佔地外逸於之側相對的側上。 舉例而言，在說明於圖37A及圖37B中之裝置封裝件中，TLP材料元件306A、306B及306C可類似於圖38之接合元件形成，其中任何熔融材料自TLP接合元件306A、306B及306C之外逸的優先方向係朝向TLP接合元件306A、306B及306C中的另一者。TLP接合元件306A、306B及306C因此可用來將自TLP接合元件306A、306B及306C外逸之任何熔融材料限制在彼此之間。舉例而言，TLP接合元件306A可經組態，使得來自元件306A之任何熔融材料將朝向元件306B而非朝向裝置312流動。另外，裝置封裝件300'可具備一或多個TLP支柱306D(圖37B中未展示)，其橋接TLP接合元件306A、306B及306C中之一或多者之間的區域以提供對可自TLP接合元件306A、306B及306C中之任一者外逸之任何熔融材料的進一步限制。 在另一實施例中，裝置之接合墊或觸點可具備多個TLP接合元件，或具備TLP接合元件之具有不同比率之較高熔點材料(例如，金)與較低熔點材料(例如，銦)的區。舉例而言，如圖39中所說明，裝置之觸點910可具備TLP接合元件之四個區915a、915b、915c、915d，該四個區中之至少兩者具有不同比率之較高熔點材料與較低熔點材料。區915a、915b、915c、915d中之至少一者可具有目標比率之較高熔點材料與較低熔點材料，其在接合之後將導致該區完全或充分完全形成化學計量金屬間合金(例如，AuIn2 )。區915a、915b、915c、915d中之至少一個其他區可具有目標比率之較高熔點材料與較低熔點材料，其低於足以在接合之後在整個區形成化學計量金屬間合金的比率。區915a、915b、915c、915d中之至少另一個區可具有目標比率之較高熔點材料與較低熔點材料，該目標比率高於足以在接合之後在整個區形成化學計量金屬間合金的比率。因此，即使形成區915a、915b、915c、915d之製程脫離目標，例如，沈積過量或低於所要量之較低熔點材料或較高熔點材料中之一者，仍將很可能的是，區915a、915b、915c、915d中之至少一者將具有一比率之較低熔點材料與較高熔點材料以形成完全或充分完全地由所要化學計量金屬間合金組成的接合/觸點元件。圖39之結構可另外或替代地用以將例如晶圓之一個基板接合至另一基板及/或將裝置封裝件之數個部分黏附至彼此。應瞭解，圖39之結構可包括TLP接合元件之多於四個或少於四個不同區，且區可相較於所說明不同地塑形，例如，塑形為條帶、盤或任何其他所要形狀。 應瞭解，說明於圖32至圖39中之TLP接合元件中之任一者可包括先前論述之結構中之任一者，例如，圖24A、圖25A或圖26A中之任一者的多層結構或圖27A之台階式結構；且可包括於下文所描述之圖40及/或圖41中所說明之裝置中。 圖40說明可藉由包括本文中解釋之結構及方法中之一或多者之方法形成的電子模組之實施例。模組600包括在上面形成射頻(RF)電路604之基板602。RF電路可為(例如)濾波器或雙工器。至少一個裝置606利用根據本文中所揭示之方法之TLP接合或密封方法密封或接合至RF電路的一部分。在一些實施例中，藉由如本文中所揭示(例如如參看圖18A及圖18B所描述)之TLP接合方法在裝置606上之觸點與RF電路中之觸點之間進行電連接。在其他實施例中，裝置606可使用如本文中所揭示(例如參看圖16A及圖16B)之TLP密封方法經氣密地密封。 圖41說明可藉由包括本文中所揭示之接合元件及方法中之一或多者的方法形成之無線裝置700的實施例。無線裝置包括數種組件，該等組件包括使用者介面702、記憶體704、基頻子系統706、功率管理子系統708、收發器710、功率放大器712、天線開關模組714、低雜訊放大器718及天線720。此等組件中之任何一或多者可利用本文中所揭示之TLP接合或密封元件及方法之實施例接合至或密封於無線裝置之基板上。在一些實例中，無線裝置700之組件中的一些，例如，功率放大器712、天線開關模組714及低雜訊放大器718中之一或多者包括於如圖32中所說明之模組600中，或替代地可為密封及/或接合至RF電路604的裝置606。 除非上下文另外明確要求，否則貫穿說明書及申請專利範圍，詞「包含」及其類似者應以包括性意義解釋，而非排他性或窮盡性意義；換言之，呈「包括(但不限於)」之意義。如本文中一般所使用，詞語「耦接」指可直接連接或藉助於一或多個中間元件連接之兩個或多於兩個元件。另外，當用於本申請案中時，詞「本文中」、「上文」、「下文」及類似意義之詞應指本申請案整體而非本申請案之任何特定部分。在上下文准許的情況下，使用單數或複數數目之上述[實施方式]中之詞語亦可分別包括複數或單數數目。參考兩個或兩個以上項目的清單之詞「或」，該詞涵蓋該詞之所有以下解釋：清單中之項目中之任一者、清單中之所有項目及清單中之項目之任何組合。 本發明之實施例之上述詳細描述並不意欲為窮盡性的或將本發明限於上文所揭示之精確形式。熟習相關技術者將認識到，雖然上文出於說明之目的描述本發明之特定實施例及實例，但在本發明之範疇內各種等效修改係有可能的。舉例而言，雖然以既定次序呈現程序或動作，但替代實施例可以不同次序執行具有步驟之常式，或使用具有組件之系統，且可刪除、移動、添加、再分、組合及/或修改一些程序或組件。此等程序或組件中之每一者可以多種不同方式來實施。又，儘管有時將程序或動作展示為連續執行，但此等程序或動作可替代地並行地執行，或可在不同時間執行。 本文所提供之本發明之教示可應用於其他系統，未必為上文所描述之系統。可組合上文所描述之各種實施例之元件及動作以提供另外實施例。 因此已描述本發明之至少一個實施例之幾個態樣，應瞭解，熟習此項技術者將容易想到各種改變、修改及改良。任何實施例中所描述之任何特徵可包括於任何其他實施例之任何特徵中或取代其。此等改變、修改及改良意欲為本發明之部分，且意欲在本發明之範疇內。因此，前述描述及圖式僅為實例說明。The application of the present invention is not limited to the details of the configurations and the configurations of the components illustrated in the following description or illustrated in the drawings. The invention is capable of other embodiments and of various embodiments. In addition, the words and terms used herein are for the purpose of description and should not be considered as limiting. The use of "including", "comprising", "having", "including", "comprising" and variations thereof in this document is intended to cover the items enumerated thereafter and their equivalents and additional items. Examples of surface coating and bonding for transient liquid phase (TLP) are disclosed herein. In some embodiments, the transient liquid phase surface coating or bonding is achieved by coating a suspension of particles having a plurality of layers followed by heating to cause surface coating or bonding. In other embodiments, the transient liquid phase surface coating or bonding is performed by coating a film having a plurality of layers to one or more surfaces or coating the film between one or more surfaces followed by heating to cause a surface Coating or bonding to achieve. The resulting surface coating or bonding can be used, for example, to bond components, to make the surface conductive, to provide a conductive path within the hollow features of the structure, and the like. For example, in some embodiments, a transient liquid phase bonding process can be used to form structure 10 as illustrated in FIG. 1 having a first substrate bonded to a second substrate or component 16 with a layer of bonding material 14. Or component 12. In various embodiments, one or both of the substrates or components 12, 16 are active substrates, for example, semiconductor material substrates that may include one or more active devices. In other embodiments, one or both of the substrates or components 12, 16 can be a mounting substrate, such as a printed circuit board, or an assembly for a package of electronic devices. In some embodiments, a transient liquid phase surface coating process can be utilized to form the structure 20 as illustrated in FIG. 2 having a conductive coating 28 bonded to the upper surface 24 of the substrate 22. The conductive coating conformally covers the upper surface 24 of the substrate 22 and fills rough surface features and/or recesses, such as recesses 26. Similar to the substrates 12 and 16 of FIG. 1, in various embodiments, the substrate 22 is one or more of an active semiconductor substrate, a mounting substrate (eg, a printed circuit board), or an assembly for an electronic device package. . In the following disclosure, aspects and embodiments of transient liquid phase bonding are discussed. It should be understood that the materials, structures, and techniques disclosed in the transient liquid phase bonding can also be applied to processes for transient liquid phase surface coating and/or package sealing. Transient liquid phase (TLP) bonding is a multi-stage process whereby a multi-component system (eg, two metals capable of forming a binary alloy) is contacted to heat the multi-component system above the other component materials The melting point of the component material having a lower melting point, followed by maintaining the multi-component system at a temperature for a time sufficient for the two materials to be dispersed for each other, thereby producing a binary alloy. In some embodiments, the TLP bonding structure can include three or more components. For example, the particulate structure or layered structure may be formed from at least one layer (or formed from a core in an embodiment of the particle structure) formed from an alloy having more than one material. Non-limiting examples of TLP joint structures utilizing more than two materials include structures utilizing gold and lead-tin alloys and structures utilizing tantalum and aluminum-copper alloys. In some embodiments, the alloy may be a eutectic alloy where the alloy is a component material having a lower melting point than the other component materials. In some embodiments, it has been found desirable to achieve true liquefaction of a lower melting temperature material. This allows the resulting bonding interface to effectively overcome the challenges of good bonding (eg, device topology, surface roughness, etc.). It is also desirable to have liquefaction of the lower melting point material due to the fact that the lower melting point component diffuses in the liquid phase to the higher melting point component, typically several orders of magnitude faster than the solid state interdiffusion of the lower melting point material and the higher melting point material. . If the material is properly selected and the fraction of the low melting temperature component and the high melting temperature component is properly selected, the low melting temperature component layer can be sufficiently alloyed with the high melting temperature component. The resulting alloyed structure can then have a higher melting point than the component used to create the bond, since all of the low melting temperature components have been alloyed into a more refractory mixture by diffusion. One binary system used as an example in the present invention is an indium gold system in which indium is a lower melting temperature component. There are many other binary TLP component systems that will be similarly represented, and the invention is only limited to TLP structures and methods involving indium gold systems. Depending on the materials used, the intermetallic compound between the two components may be improperly formed even at room temperature or during the melting point of the component heated to the low melting temperature (but before the liquefaction of the low melting temperature component). Premature intermetallic formation can undesirably consume some or all of the low melting temperature components such that liquefaction is inefficient in conformally covering the topology/roughness within the joint region. For this reason, a relatively thick layer of low temperature temperature material has been used in the past to ensure that, in spite of the low temperature diffusion in progress, when the TLP structure reaches the melting point of the low melting temperature component, a sufficient thickness of the low temperature melting group remains. Share. The use of such thicker low melting temperature component layers can be required to take longer to complete the interdiffusion of the components during the bonding process due to the longer length dimension required to move the atoms by diffusion. In addition, thicker, lower melting temperature component layers have been known to be more "squeezed out" when the bonding process reaches the melting point and forces are applied to bond. Thus, there may be a need for a TLP material system that can be utilized to form a structure that will not be alloyed too early, will be rapidly and/or completely alloyed during bonding, and will not be extruded during the bonding process. . In some implementations, the transient liquid phase bonding is a multi-stage process that utilizes a multi-component system, for example, a binary alloy 34 comprising a first component material 30 and a second component material 32 (FIG. 3 ). The first component material 30 and the second component material 32 can all be metal. The first component material 30 and the second component material 32 are made to have a melting point lower than the melting point of the first component material 30 (e.g., T1 illustrated in Figure 4) and the melting point of the second component material 32 (e.g., Figure 4) The first temperature (T, see Figure 4) of both T2) is contacted. The two component materials 30, 32 are heated to a temperature above the melting point of the component materials 30, 32 having a lower melting point (T1) than the other component materials 30, 32. The two component materials 30, 32 are then maintained at a temperature for a time sufficient to disperse the two component materials 30, 32 from each other, for example, a time sufficient to diffuse the lower melting material into the higher melting material, thereby producing Alloy 34. A significant benefit of transient liquid phase bonding is that the resulting alloy can have a higher melting point than the temperature used to bond. This is due to the interdiffusion of the constituent components resulting in an alloy having a higher melting point than the lower melting material and, in some instances, the melting point between the melting point of the lower melting material and the melting point of the higher melting material. In some embodiments and by way of example, a multi-component system includes a plurality of particles in which indium (In, melting point of 156.6 degrees Celsius) is used as a core outside the core of gold (Au, melting point of 1,064 degrees Celsius) located inside each particle Coating. Low melting point components such as indium may be selected to wet well and bond to selected coating sites or substrates and/or other particles. A plurality of such layered particles to be alloyed may, for example, be placed in a volatile liquid to form a suspension which is disposed on the substrate by spin coating, spraying or screen printing. The liquid nature of the suspension can provide advantageous features such as low coating/treatment costs, low processing temperatures, conformal filling of recessed features, and the like. The preparation of the foregoing suspension may include preparing particles of a high melting point material coated with a low melting point material interdiffused with a high melting point material, thereby producing a high melting point alloy. This can be achieved, for example, via sol gel preparation followed by electroless coating. Alternatively, the preparation of such particles may include spray powder formation, conventional ball milling or other small particle production methods. In some embodiments, an additional layer of non-oxidizing material (eg, another gold layer) may be formed over the indium layer to prevent or reduce oxidation of the indium prior to bonding. In some applications, the use of a diffusion barrier between the low melting material and the high melting material prevents or reduces premature diffusion alloying prior to the intended heating of the heating material that reacts to the refractory alloy. In the foregoing particle structure example, the intermediate coating layer of the diffusion barrier layer may be disposed between the low melting point material and the high melting point material to prevent or reduce its premature mutual diffusion. The coating of the aforementioned particles and such particles (e.g., as a suspension) can provide a number of advantages. For example, the resulting network does not generally have a flux or residual organic material to be burned out like other alternative epoxy-based coating methods. In another example, it is not necessary to rely on mechanical contact in the matrix to obtain conductivity (such as in applications where simple metal particle suspensions are used). In yet another example, particles having one or more of the features as described herein can be diffusion welded to any metal that is susceptible to alloying with the system. In some implementations, one or more of the features described herein can be extended to produce a porous conductive network that can be assembled at relatively low temperatures with appropriate selection of, for example, particle size and coating thickness. One or more features of the present invention may also be utilized to configure a system having more than dual functionality. One or more features of the invention may also be utilized, if desired, to configure a particle core that is not electrically conductive and/or non-alloyed. Figure 5 illustrates particles 100 having a core 102 and a coating 104 to form a binary system. In some embodiments, the size of core 102 (eg, diameter d1, d2, or d3) and/or the thickness of coating 104 (eg, thickness t1, t2, or t3) may be selected for a particular application. The core dimensions and coating thicknesses selected for this type may be average or within some range. For example, the core size and coating thickness can be selected such that the relative amounts of core material and coating material in the population of particles are on average sufficient to form a higher melting temperature than the coating material when the particles are fully alloyed. alloy. In some embodiments, the core 102 of the particle 100 and the material of the coating 104 are selected to produce a binary alloying system. In some embodiments, the coating material is selected to have a melting temperature that is lower than the melting temperature of the core material. Additionally, the alloy produced by coating 104 and core 102 can have a melting temperature that is significantly higher than the melting temperature of the coating material. In the various examples described herein, core 102 is described as gold (Au, melting point is 1,064 degrees Celsius), and coating 104 is described as indium (In, melting point is 156.6 degrees Celsius). However, it should be understood that other combinations of materials may also be utilized. Examples of other material systems that can be used in the various embodiments disclosed herein include, but are not limited to, aluminum (Al, melting point is 660 degrees Celsius) - bismuth (Ge, melting point is 938 degrees Celsius) (the melting point of the eutectic alloy is Celsius 450 Degree), Au-矽 (Si, melting point is 1,414 degrees Celsius) (melting alloy melting point is 363 degrees Celsius), Au-tin (Sn, melting point is 232 degrees Celsius) (the melting point of eutectic alloy is 217 degrees Celsius) (93.7 %Sn) and 278 degrees Celsius (29% Sn)), copper (Cu, melting point is 1,085 degrees Celsius)-Sn (the eutectic alloy melting point is 270 degrees Celsius), lead (Pb, melting point is 327 degrees Celsius)-Sn ( The eutectic alloy has a melting point of 183 degrees Celsius, and In-Sn (the melting point of the eutectic alloy is 120 degrees Celsius). Alloys of such materials having compositions other than the eutectic composition have a higher melting point than the eutectic composition. At least some of the alloys of these materials have a melting temperature that is higher than the melting temperature of the component having a lower melting temperature. For ease of description, the aspects and embodiments disclosed herein are described as including alloying components Au and In, however, it should be understood that any one or more of these other alloy systems may be substituted for the Au-In system. 6 shows that, in some embodiments, the particles 100 having the core 102 and the coating 104 can further include an outer layer 106 configured to, for example, prevent or reduce oxidation of the coating 104. The additional layer may be formed of, for example, gold. Outer layer 106 is sufficiently thin to provide coating 104 to be heated while providing the aforementioned protective functionality. In some embodiments, the outer layer 106 provides sufficient protection to avoid oxidation of the coating 104 only a few nanometers thick (eg, less than about 10 nanometers thick). As described herein, outer layer 106 and core 102 may form an alloy with coating 104 once properly heated. In the foregoing examples, outer layer 106 is depicted as having the same material as core 102. However, it should be understood that the outer layer 106 can be formed from a different material than the core 102. For example, in some embodiments, the outer layer 106 can be formed from one or more materials including, but not limited to, titanium (Ti), platinum (Pt), nickel (Ni), indium oxide (In2 O3 ), tin (Sn) or a combination or alloy of the one or more materials. FIG. 7 shows that in some embodiments, the particles 100 having the core 102 and the coating 104 can further include a barrier layer 108 disposed between the core 102 and the coating 104. For example, the barrier layer can be configured to prevent or reduce premature interdiffusion between the core 102 and the coating 104. For example, if the indium coating 104 is brought into direct contact with the gold core 102, intermetallic diffusion can occur within each particle even at room temperature. The use of a diffusion barrier layer 108 such as titanium (Ti) prevents this premature interdiffusion without interfering with the desired interdiffusion after indium liquefaction. By way of example, a layer of titanium having a thickness in the range of 200 Å to 400 Å can be disposed between the indium layer and the gold core to prevent or reduce premature alloying of the indium layer with the gold core. Other materials that can be used for the barrier layer include platinum (Pt), nickel (Ni), and indium oxide (In2 O3 ), tin (Sn), and combinations or alloys of the foregoing. 4 and 8A-8C illustrate an example of an alloying process that can be performed using particles such as those described with reference to Figures 5-7. Figure 4 shows the time-dependent temperature profile 50 as the particles (e.g., coated as a suspension) are heated. 8A through 8C illustrate example states at various stages of the heating process. In the unheated state 120, a plurality of particles 100 are shown to form a network (Fig. 8A). For example, the network can be formed by coating particles 100 on the surface and/or features of the substrate in the form of a suspension. As described herein, the particles 100 are shown to have their respective cores 102 and coatings 104. In this unheated state, the temperature of the particles 100 is shown as T and the coating is in an unmelted form. When the network of particles 100 is heated to a temperature greater than the melting temperature T1 of the coating material but below the melting temperature T2 of the core material, the coating 104 exhibits liquefaction at state 130 (Fig. 8B). This liquefied material 132 of the coating 104 is shown to flow between adjacent particles. In this heated state, the liquefied coating material 132 diffuses into the core material. The alloyed state 140 (Fig. 8C) may be produced when the aforementioned heating temperature is maintained for a time sufficient to permit the aforementioned diffusion. In this state, the alloyed particles 142 are shown to form a network. This alloyed network is shown to have a melting temperature T3 that is significantly higher than the melting temperature T1 of the material of the coating 102. In the example shown, the melting temperature T3 of the network of alloyed particles 142 is shown to be lower than the melting temperature T2 of the core material. In the context of an example indium-gold binary system, the melting temperature T3 of the resulting alloy varies depending on the relative amounts of indium and gold. When the weight % of indium in the binary system is zero, the system is essentially gold and its melting temperature is approximately 1,064 degrees Celsius. As the weight % of indium increases, the melting temperature of the resulting alloy decreases, and a valley value of about 458 degrees Celsius is reached at an indium content of about 25% by weight. As the weight % of indium further increases, the melting temperature of the resulting alloy increases and reaches a peak of about 510 degrees Celsius when the indium content is about 37% by weight. As the weight % of indium is further increased, the melting temperature of the resulting alloy is reduced and reaches a valley value of about 495 degrees Celsius when the indium content is about 42% by weight. As the weight % of indium further increases, the melting temperature of the resulting alloy increases and reaches a peak of about 541 degrees Celsius when the indium content is about 54% by weight. As the weight % of indium is further increased, the melting temperature of the resulting alloy is reduced to a melting temperature of about 156.6 degrees Celsius when the indium content is 100% by weight. Based on the foregoing examples, it can be seen that there is a large range of melting temperatures of indium-gold alloys (eg, less than 50% by weight of indium) which is significantly higher than the melting temperature of indium (156.6 degrees Celsius) (eg, greater than Or equal to about 458 degrees Celsius). In some embodiments, the amount of indium in the particles (and thus in the alloy) can be selected based on factors such as the increased melting temperature of the alloy, the electrical properties of the alloy, and the mechanical network of the resulting alloy network. Characteristics and / or alloying process. In the context of an example particle having a gold core and an indium coating, and as described with reference to Figures 5-7, the indium content can be achieved by, for example, coating thicknesses t1, t2, t3 relative to core diameters d1, d2 And d3 changes and changes. When the thickness of the indium coating is within the desired range (for a given diameter of the gold core), there may be a sufficient amount for a relatively fast diffusion process into the gold core without significant amounts of excess indium. indium. Thus, the coating thicknesses t1, t2, t3 and/or core diameters d1, d2, d3 can be adjusted to preferably produce this alloying process. It should be understood that such thickness and diameter values or ranges may be average or range between particles. Note that if there is an insufficient amount of indium (eg, due to the coating being too thin), an alloy layer can be formed in the core, and the alloying process can be automatically terminated when the indium liquefied is exhausted. In this case, the inner portion of the core can remain as highly conductive gold. If the heating process continues for a long period of time, the indium can be further driven into the core; however, this lengthy process may not be desirable in a fast and low temperature alloying process. It is also noted that if too much indium is present (eg, due to the coating being too thick), the resulting alloy can have a higher electrical resistivity. In some applications, this higher resistivity of the alloy may or may not be desirable. Additionally, there may be excess indium that does not diffuse into the core, thereby causing indium reflow. In this case, excess indium having a relatively high electrical resistance can be undesirably melted and reflowed at relatively low temperatures during subsequent processing steps involving heating. In the various examples described with reference to Figures 5-8C, the particles 100 are depicted as being generally spherical. 9A-9C show that particles 100 having one or more of the features as described herein do not have to have a spherical shape. FIG. 9A is a spherical shape example particle 100 similar to the example described with reference to FIGS. 5 through 8C. FIG. 9B shows an example particle 100 having a generally circular shape (eg, an ellipsoid) rather than a sphere shape. As described herein, the particles can include a core portion 102 and a coating portion 104. 9C shows that in some embodiments, the particles 100 need not have a circular shape and may include one or more sharp features such as a corner. The example particle 100 of Figure 9C is shown as having a polygonal cross-sectional shape. As described herein, the particles can include a core portion 102 and a coating portion 104. It will be appreciated that a particle having one or more of the features as described herein can have a shape that is different from the shape illustrated. Additionally, it should be understood that the non-spherical particles may also include the coating 104 as illustrated in FIG. 6 and/or the barrier layer 108 as illustrated in FIG. FIG. 10 illustrates a process 150 that can be implemented to produce coated particles having one or more features as described herein. 11A and 11B show example states of this process. In block 152, core particles are provided or formed. In Figure 11A, one of these core particles is depicted at 102. In block 154, a coating is formed on the core particles. In FIG. 11B, the coating 104 is depicted as being formed on the core particles 102. FIG. 12 shows a process 160 that can be implemented to coat particles having one or more features as described herein. Figures 13A and 13B show example states of this process. In block 162, a suspension of coated particles is formed in solution. In FIG. 13A, this suspension is depicted at 170 where the coated particles 100 are suspended in solution 172. In block 163, a suspension can be applied. In FIG. 13B, suspension 170 is depicted as being dispensed from substrate 178 onto substrate 178 (arrow 176). 14A shows that in some embodiments, the substrate to which the suspension of coated particles described above is applied can be a semiconductor wafer 178. For example, this coating can be achieved by spin coating in which wafer 178 spins while a suspension is applied at or near the center of wafer 178. Due to spin 180 of wafer 178, the suspension on wafer 178 migrates outward (arrow 182). Figure 14B shows a side view of the spin coating example of Figure 14A. By way of example, the suspension can be sprayed 186 from the dispensing device 188 onto the central portion of the surface 184 of the wafer 178. This sprayed suspension can then be moved outward due to the spin of wafer 178. In some embodiments, the wafer can include an array of cells 190 that will become individual dies upon singulation. 14C shows an example of such a unit 190 in which, for example, the conductive features of contact pads 192 and conductive traces 194 can be formed by patterning a conductive layer formed using coated particles as described herein. In other embodiments, the conductive layer is formed from an embodiment of a layered joint structure as described below, for example, with reference to Figures 26A-26C or 27A-27C. These conductive features are examples of features formed on the surface. In some embodiments, the coated particles can also be used to fill or coat three-dimensional features, such as vias, recesses in substrates such as wafers, package substrates (eg, laminate substrates and ceramic substrates), and circuit boards. , side walls, etc. Examples of such coatings are described in more detail below. 15A-15F illustrate non-limiting examples of conductive features that may be formed using coated particles having one or more features as described herein. As described herein, such electrically conductive features can be used to bond portions together to form a conductive path or layer or any combination thereof. In the example configuration 200 of FIG. 15A, the conductive layer 204 can be used to mount a component 206 (eg, a die, surface mount technology (SMT) device, etc.) on a substrate 202 (eg, a package substrate). To achieve this arrangement, a layer of unalloyed particles can be formed on substrate 202, followed by positioning of assembly 206. The assembly can then be heated to a lower temperature than the melting temperature of the coating as described herein to thereby form an alloy layer between the substrate 202 and the assembly 206. In the example configuration 210 of FIG. 15B, a conductive layer 214 is formed on the underlying structure 212. By way of non-limiting example, structure 212 can be an overmolded structure implemented on a package substrate, and this conductive layer 214 can be used as a radio frequency (RF) shield. The conductive layer can be electrically connected to a ground plane (not shown) within the package substrate via, for example, a shield bond wire, a conductive component, a conductive layer on one or more of the sidewalls, or any combination thereof. 15C and 15D show an example in which a conductive layer formed as described herein can conform to a three-dimensional surface. In the example configuration 220 of FIG. 15C, the conductive layer 224 formed with coated particles as described herein can conform to the recess 226 defined by the structure 222. For example, the structure can be an overmolded structure formed over the package substrate. By way of example, a recess 226 can be formed on the upper surface of the overmold structure to expose an upper surface of a component (not shown) that is configured to provide an upper surface thereof and a package substrate (eg, grounded thereto) Electrical connection between planes). Once the upper surface is exposed, a conductive layer 224 can be formed, and this layer can conform to the overmolded structure and the contour of the upper surface of the recess 226. In some embodiments, this conformal conductive layer 224 can be used as an RF shield. In the example configuration 230 of FIG. 15D, the conductive layer 234 formed with coated particles as described herein can conform to the upper surface and side surfaces of the package 232. For example, the package can include a combination of an overmold and a package substrate, wherein one or more components are mounted on the package substrate and encapsulated by the overmold. In some embodiments, the box-like module having the conformal conductive layer 234 can cover five sides of the six sides except for the bottom side (which is mounted to, for example, a circuit board). The conformal conductive layer 234 can be electrically connected to a ground plane within the package substrate via, for example, conductive features exposed to the uncoated sidewalls. In some embodiments, the package substrate can be a laminate substrate, or a ceramic substrate such as a low temperature co-fired ceramic (LTCC) substrate. In some embodiments, the upper portion of the package substrate can include an overmolded structure (such as in the example of Figure 15D). In other embodiments, the conformal conductive layer can also cover the components and features of the overmolded structure and the sidewalls of the package substrate. 15E and 15F show examples of coated particles having one or more features as described herein that can be used to form conductive via holes. In the example configuration 240 of FIG. 15E, layers 244 formed by alloying of coated particles as described herein can be formed on the upper and lower sides of the substrate 242 (eg, wafer, package) The via holes 246 between one or more layers of the substrate, etc., are electrically conductive. In the example configuration 250 of FIG. 15F, the via holes 256 between the upper and lower sides of the substrate 252 (eg, one or more layers of the wafer, package substrate, etc.) may be filled with as described herein. A conductive material produced by alloying of coated particles. In some embodiments, a method of transient liquid phase bonding can be used to create a hermetic seal around an electronic or electromechanical component in a package. An example of this situation is illustrated in Figures 16A and 16B. In Figures 16A and 16B, a method of transient liquid phase bonding is used to seal package 300 for device 312. In the examples illustrated in Figures 16A and 16B, by means of a material structure capable of forming a transient liquid phase bond between the substrates 302, 304, for example, the coated particles disclosed above or the layers disclosed below The structure forms a bond between a base substrate 302 such as a semiconductor substrate and a top cover substrate 304 such as glass, sapphire or a semiconductor substrate. A TLP material structure 308 is deposited on one (or both) of the substrates 302, 304 to form a closed geometry, such as the rectangle 306 illustrated in Figure 16A, which is provided with, for example, a micro-electromechanical A region or pocket 310 of a system MEMS device, a surface acoustic wave (SAW) device, a bulk acoustic wave (BAW) device, or a device body acoustic wave (FBAW) device. The substrates 302, 304 are brought together and the TLP material structure 308 is heated to a temperature above the melting temperature of the lower melting material in the TLP material structure 308. The temperature of the TLP material structure 308 is maintained at or above the temperature of the melting temperature of the lower melting material until the materials of the TLP material structure 308 are at least partially or completely dispersed to form an alloy. The resulting alloy forms a hermetic seal around the area or pocket 310 in which the device 312 is mounted. In some embodiments, as illustrated in FIGS. 17A and 17B, a transient liquid phase bonding method can be used to mount device 322 on substrate 320 to form structure 305. Bonding between a substrate 320, such as a semiconductor substrate or printed circuit board, and device 322 is formed by a material structure capable of forming a transient liquid phase bond between substrate 320 and device 322, such as those disclosed above. The particles are coated or the layered structure disclosed below. The TLP material structure 324 is deposited on a portion of the upper surface of the substrate 320 and/or on the lower surface of the device 322. The substrate 320 and device 322 are brought together and the TLP material structure 324 is heated to a temperature above the melting temperature of the lower melting material in the TLP material structure 324. The temperature of the TLP material structure 324 is maintained at a temperature above the melting temperature of the lower melting material or maintained above that temperature until the material of the TLP material structure 324 at least partially or completely interdiffuse to form an alloy. Conductive and thermally conductive bonding between the resulting alloy forming device 322 and the substrate 320. In some embodiments, for example, as illustrated in Figures 18A and 18B, the bond formed between device 322 and substrate 320 is used to form electrical contacts (e.g., device 322 and bond pads on substrate 320). One or more electrical paths. In such embodiments, instead of substantially covering the entire area between device 322 and substrate 320 as in FIGS. 17A and 17B, TLP material structure 324 is deposited on the lower surface of device 322 and/or on the upper surface of substrate 320. Multiple separate areas. At least one electrical contact is disposed on an upper surface of the substrate 320 and a lower surface of the device 322 in at least one of the separation regions. In some embodiments, the device 312 of FIGS. 16A and 16B can be bonded to the substrate 302 using methods as described in any of FIGS. 17A and 17B or FIGS. 18A and 18B. The TLP material structure can thus be used to form a hermetic seal of the device 312 in the package 300 and to provide electrical communication between the device 312 and the electrical contacts on the substrate 302. The method of joining the surfaces of the two substrates is illustrated in Figs. 19 to 22. The first substrate 332 and the second substrate 342 to be bonded are illustrated at 330 in FIG. A first gold layer 334 is deposited on the illustrated surface of the first substrate 332, and a second gold layer 344 is deposited on the illustrated surface of the second substrate 342. The surface irregularities illustrated as a pair of gold bumps 336a, 336b are presented on the upper surface of the first gold layer 334 opposite the surface of the first gold layer 334 disposed on the illustrated surface of the first substrate 332. The first gold layer 334 and the second gold layer 344 have a thickness ranging between about 10 nm and about 10 μm, although embodiments disclosed herein are not limited to having a gold layer of any particular thickness. In FIG. 20, a bonding material layer 352 such as indium has been added to the lower surface of the second gold layer 344 opposite to the surface of the second gold layer 344 disposed on the illustrated surface of the second substrate 342 to form a structure. 350. Indium can be added by physical or chemical deposition processes, electroplating processes, or any other metal deposition process known in the art. 21 illustrates a structure 360 that is formed by the structure 350 by bringing the substrates together such that the bonding material layer 352 is in contact with the first gold layer 334 and the bonding material layer 352 is heated to melt and conform to the first gold layer 334. The temperature of the upper surface is formed to form a molten bonding layer 362. The structure 360 is maintained at a high temperature for a period of time sufficient for the gold and indium from the first gold layer 334 and the second gold layer 344 to interdiffuse to form the alloy bonding layer 372 in the structure 370. The high temperature at which the alloy bonding layer is formed is higher in some embodiments than the melting temperature of indium and lower than the melting temperature of gold. In other embodiments, the high temperature at which the alloy bonding layer is formed is lower than the melting temperature of indium. Heat is removed after the alloy bond layer 372 is formed. The method illustrated in Figures 19-22 can suffer from several disadvantages. For example, if the surface of the indium to be bonded to the first gold layer 334 remains uncovered and exposed to air, the surface of the indium may form an indium oxide surface layer that may interfere with the bonding process. Additionally, the gold in the second gold layer 344 can be interdiffused with the indium layer 352 to form a gold indium alloy prior to the bonding process or during heating to the desired bonding temperature, thereby reducing the amount of unalloyed indium that can be used to form the bond. the amount. Another method of joining a pair of substrates is illustrated in Figures 23A-23D. Figure 23A illustrates the pair of substrates 332, 342 to be bonded. Similar to substrate 332 of FIG. 19, first substrate 332 has a first gold layer 334 that includes gold bumps 336a and 336b deposited thereon. Similar to the substrate 342 of FIG. 19, the second substrate 342 has a second gold layer 344 deposited thereon. The second substrate 342 of FIG. 23A also has a layer 380 of a second bonding material such as indium deposited on the second gold layer 344 and a third gold layer 382 deposited on the bonding material layer. The bonding material layer 380 of FIG. 23A is thinner than the bonding material layer 352 illustrated in FIG. Figure 23B illustrates a first substrate 332 and a second substrate 342 that are aligned for bonding. The third gold layer 382 deposited on the bonding material layer 380 seals the bonding material layer 380 from the atmosphere, thereby reducing or eliminating the tendency of the bonding material layer 380 to form surface oxides. In some embodiments, the third gold layer 382 can be at least about 15 nanometers thick to provide acceptable inhibition of oxidation of the surface of the bonding material layer 380. However, room temperature diffusion or diffusion of the structure of FIG. 23B to the bonding temperature causes the material from the second gold layer 344 and the gold from the third gold layer 382 to interdiffused with the material of the bonding layer to form an alloyed material, For example, AuIn as illustrated in FIG. 23C2 . This effect is more pronounced in the case of thinner, rather than thicker, layers of bonding material. The entire bonding material layer 380 can be alloyed if the bonding material layer is too thin, or if interdiffusion occurs for too long or occurs at too high a temperature. The alloy layer 384 formed by the interdiffusion of gold and the bonding material may have a melting temperature higher than that of the pure bonding material, as is the case in the gold-indium system. In some embodiments, the alloy layer 384 will therefore not melt at the desired bonding temperature and will not flow to conform to the surface of the first gold layer 334 as illustrated in Figure 23D. Some interdiffusion may occur between the alloy layer 384 and the gold bumps 336a, 336b, but the alloy layer will not bond to the remainder of the surface of the first gold layer 334, thereby causing a relationship between the first substrate 332 and the second substrate 334 The joint is weak. Figure 24A illustrates the configuration of the substrate and bonding layer structure similar to the substrate and bonding layer structure of Figure 23A. However, in FIG. 24A, the bonding material layer 390 is thicker than the bonding material layer 380 in FIG. 23A. In the structure of Fig. 24A, the thicker bonding material layer 390 prevents complete alloying of the bonding layer. The first alloy layer 394 and the second alloy layer 396 can be formed by interdiffusion of the material of the bonding material layer with the second gold layer 344 and the third gold layer 392, respectively, but the layer of the unalloyed bonding material can be maintained. Within the layer of bonding material, as illustrated in Figure 24B. The unalloyed bonding material melts at the desired bonding temperature and flows around the gold bumps in the first gold layer 334 to form a conformal bond between the substrates 332, 342, as shown in Figure 24C. The unalloyed bonding material is alloyed during the bonding process by additional interdiffusion between the bonding material and the gold layer, resulting in a alloyed bonding material layer 398, as illustrated in Figure 24C. The resulting bond is due to the increased contact area between the alloyed bond material and the first gold layer 334 and is stronger than the bond illustrated in Figure 23D. Another method and associated structure for joining a pair of substrates is illustrated in Figures 25A-25C. In FIG. 25A, the first substrate 332 and the first gold layer 334 and the second substrate 342 and the second gold layer 344 are similar to those illustrated in FIGS. 19, 23A, and 24A. The bonding material layer 400, such as the indium layer, is a thin layer similar to the bonding material layer 380 of FIG. 23A. The indium layer may only have the thickness necessary to incompletely alloy and/or produce sufficient liquid indium to provide conformal coverage of surface irregularities on the first gold layer 334 prior to reaching a liquid state. Unlike the structure shown in FIG. 23A, an upper diffusion barrier layer 402 (also referred to as a "barrier layer") is deposited between the bonding material layer 400 and the second gold layer 344, and a lower diffusion barrier layer 404 (also referred to as The "barrier layer" is deposited on the lower surface of the bonding material layer opposite to the surface on which the upper diffusion barrier layer 402 is formed. The upper diffusion barrier layer 402 is formed of a material that inhibits or blocks the diffusion of gold from the second gold layer 344 into the bonding material layer 400. The lower diffusion barrier layer 404 is formed of a material that seals the bonding material layer from the atmosphere to inhibit or eliminate oxidation of the surface of the bonding material layer 400, which surface will be bonded to the first gold layer 334. The upper diffusion barrier layer 402 and the lower diffusion barrier layer 404 are formed of a material that does not rapidly interdiffused with the material of the bonding material layer 400, or at least a material that diffuses with the material of the bonding material layer at a rate slower than the rate of gold. form. The barrier material and thickness of the upper diffusion barrier layer 402 and the lower diffusion barrier layer 404 are suitably selected to reduce the undesired low temperature premature alloying of the binary system. In some embodiments, the upper diffusion barrier layer 402 and the lower diffusion barrier layer 404 may have a thickness of about 15 nm or more, and provide a diffusion of the component material of the bonding structure and the oxygen to the bonding material layer 400. Accept the inhibition. In FIGS. 25A and 25B, the upper diffusion barrier layer 402 and the lower diffusion barrier layer 404 are illustrated as being formed of the same material (ie, platinum). In other embodiments, the upper diffusion barrier layer 402 and the lower diffusion barrier layer 404 are formed from different materials. For example, suitable materials for the upper diffusion barrier layer 402 and/or the lower diffusion barrier layer 404 include titanium, platinum, nickel, indium oxide, tin, and combinations thereof. As illustrated in FIG. 25B, as shown in FIG. 25B, as the bonding structure including the bonding material layer 400 and the upper diffusion barrier layer 402 and the lower diffusion barrier layer 404 is heated and in contact with the first gold layer, the bonding material layer 400 is suppressed. Premature alloying. The unalloyed bonding material thus melts and flows around the bumps in the first gold layer 334 to form a conformal bond with the first gold layer 334. After the materials of the upper diffusion barrier layer 402 and the lower diffusion barrier layer 404 and the materials of the gold and the bonding material layer from the first gold layer 334 and the second gold layer 344 are allowed to diffuse each other while maintaining the appropriate temperature, FIG. 25C is generated. Bonded structure. The structure includes an alloyed bonding layer conformally bonded to both the first gold layer 334 and the second gold layer 344. According to another aspect disclosed herein, the transient liquid phase bonding is performed using a joint structure comprising one or more bonded components of one or more bonded components as illustrated in Figures 26A-26C. The stacked film can be substantially flat. The stacked film includes a plurality of intervening layers of high melting point material and low melting point material rather than a single pair of thicker layers. In FIG. 26A, the higher melting material layers are illustrated as gold layers 412, 416, and the lower melting bonding material layers are illustrated as indium layers 410, 414. The amount of bonding material in each of the bonding material layers 410, 414 may be less than the amount required to form a conformal bonding between a pair of substrates, however, the total amount of bonding material in the multilayer bonding material is selected to provide sufficient between the substrates Conformal joint. The bonding material (eg, indium) layers 410, 414 may only have insufficient alloying and/or generate sufficient liquid phase bonding material to provide conformal coverage of surface irregularities on the first gold layer 334 prior to reaching a liquid state. The necessary thickness. The high melting material layers 412, 416 may only have the thickness necessary to provide sufficient material to be sufficiently alloyed with a sufficient amount of bonding material in the bonding material layers 410, 414. Bonding will occur more quickly when providing a joint structure comprising a plurality of thinner layers of high melting point material and a layer of bonding material rather than a single thicker layer of bonding material disposed between layers of higher melting material, due to diffusion (or interdiffusion) must be carried out only through a thinner layer of material to achieve complete alloying of the joined structure. In addition, in the structure in which the higher melting material layer (gold layer 344, 412, 416) illustrated in FIG. 26A is disposed on both the upper surface and the lower surface of the bonding material layers 410, 414, the higher melting material and the bonding The interdiffusion of the material of the material layers 410, 414 occurs from both sides of the bonding material layers 410, 414. In some embodiments, sufficient alloying of the joint structure of Figure 26A can occur at temperatures of about 270 degrees Celsius for less than about 10 minutes and 15 minutes. This is in contrast to conventional gold-gold thermocompression bonding, which may require heating to about 400 degrees Celsius for about 30 minutes. The bonded structure of Figure 26A thus introduces less thermal energy into the device or substrate undergoing bonding, resulting in fewer problems with material diffusion in the formed device or substrate, which may have previously reduced the reliability of the device or resulting bonded assembly. Sex. Another advantage of providing a joint structure comprising a plurality of thinner layers of high melting point material and a plurality of layers of bonding material (rather than a single thicker layer of bonding material disposed between layers of higher melting material) is in the layer of bonding material The thinner layer of low melting point material is less likely to "squeeze out" the desired bonding area during bonding due to the higher adhesion in the film. As further illustrated in FIG. 26A, in some embodiments, barrier layers 418a, 418b, 418c, 418d are disposed between the high melting material (gold layers 344, 412, and 416) and the bonding material layer (indium layers 410, 414). At every interface. The barrier material and thickness are suitably selected to reduce the undesirable low temperature premature alloying of the binary system (gold and indium). The material and thickness of the layers in the joint structure of Figure 26A are further selected to give an appropriate rate of alloying at elevated temperatures, such as temperatures at or above the melting point of the low melting temperature material of the layer of bonding material. The barrier layer is formed in one or more of the following embodiments by, for example, titanium, platinum, nickel, indium oxide, tin, or a combination thereof. The bonding material (eg, indium) layers 410, 414 may only have insufficient alloying and/or generate sufficient liquid phase bonding material to provide conformal coverage of surface irregularities on the first gold layer 334 prior to reaching a liquid state. The necessary thickness. The high melting material layers 412, 416 may only have the thickness necessary to provide sufficient material to be fully alloyed with the total amount of bonding material in the bonding material layers 410, 414. In some embodiments, the barrier layers 418a, 418b, 418c, 418d can have a thickness of about 15 nanometers or more and provide a component material of the bonding structure and diffusion of oxygen into the bonding material layers 420, 424. Acceptable inhibition. As illustrated in FIG. 26B, as the bonding structures including layers 410, 412, 414, and 416 are heated and in contact with the first gold layer 334, the bonding material layer is melted and the bonding structure forms a conformal bond with the first gold layer 334. . The formation of the conformal bond can occur at least in part by irregular thinning of the surface of the first gold layer 334, such as the illustrated bump, by the thin layers of high melting temperature material 412, 416. Additionally or alternatively, the molten material from the bonding material layers 410, 414 may flow around the surface irregularities in the first gold layer 334 to form a conformal bond. As illustrated in Figure 26C, the bonding structure is maintained at a temperature and time suitable for forming an alloyed bonding layer 418 conformally bonded to the first gold layer 334 and the second gold layer 344, thereby depositing the layers and deposits. Any of the substrates, devices or components in which the gold layers 334, 344 are located are joined together. 27A-27C illustrate how the bonding structure including the plurality of layers of high melting temperature material layers 344, 422 and the plurality of lower melting temperature bonding material layers 420, 424 and optional barrier layers 426a, 426b, 426c, 426d may be The second substrate 342 forms a conformal bond between the material layer (e.g., the first gold layer 334 disposed on the first substrate 332) having irregularities in the form of steps 430 on the upper surface 428 thereof. 27A illustrates a second gold layer 344 disposed on the second substrate 342 and having a bonding structure disposed thereon, the bonding structure having a plurality of layers of high melting temperature material 344, 422, a plurality of lower melting temperature bonding material layers 420, 424, and barrier layers 426a, 426b, 426c, 426d disposed at the interface between the layers of high melting temperature material 344, 422 and the lower melting temperature bonding material layers 420, 424. This structure is similar to the structure illustrated in Fig. 26A, except that the lower high melting temperature material layer (gold layer 416) is omitted. As illustrated in FIG. 27B, as the bonding structure contacts and heats the first gold layer 334, the high melting temperature material layer 422 deforms and the molten low melting temperature bonding material flows to conformally bond the second gold layer 344 to the first A stepped surface in, for example, region 432 on both surfaces 428 and 430 of a gold layer 334. As illustrated in Figure 27C, the bonding structure is maintained at a temperature and time suitable for forming the alloyed bonding layer 434 conformally bonded to the first gold layer 334 and the second gold layer 344, thereby depositing the layers and deposits. Any substrate, device or component having gold layers 334, 344 is joined together. In Figs. 26A and 27A, a joint structure including a plurality of pairs of bonding material layers will be described. It should be understood that in other embodiments, more than two layers of bonding material, such as a layer of indium, may be provided, such as a layer of higher melting temperature material, such as a gold layer, and optionally disposed on the layer of bonding material and higher. The barrier material layer between the layers of melting point material is separated. For example, in some embodiments, three or more than three layers of bonding material and associated higher layers of molten temperature material and barrier layers may be provided. It should be understood that although the structures and methods described with reference to Figures 19-27C are described as being used to bond one substrate to another substrate, such bonding structures and methods are equally applicable to bonding devices or components to substrates of electronic systems or alternatively A device or component and/or component for a package of an electronic device or system. In some embodiments, the relative amounts of the high temperature melting material and the lower melting bonding material in the various material layers in the structures and methods described with reference to Figures 19 through 27C can be selected such that a final alloyed bonding layer is formed, The final alloyed joint layer includes the same relative amounts of high temperature molten material and lower melting joint material in the disclosed joint structure and has a melting point between the melting point of the lower melting joint material and the melting point of the higher melting material. For example, in the embodiment shown in FIGS. 26A-26C, the ratio of the total amount of indium in layers 410 and 414 to the total amount of gold in layers 412 and 416 can be selected such that alloyed bonding layer 418 There is a melting temperature between the melting temperature of indium and the melting temperature of gold. In some embodiments, the amount of gold in the gold layers 412, 416 can be selected to be less than the amount of gold that will provide the desired ratio of gold to indium in the final alloyed layer 418 to allow for consideration from the first gold layer 334. And either or both of the second gold layer 344 diffuse into the alloyed bonding layer and provide an additional gold to the desired indium to gold ratio in the alloyed bonding layer 418. A method generally indicated at 500 for forming a joint structure as disclosed herein is illustrated in FIG. At act 502, a substrate is provided. In various embodiments, the substrate can include a mounting substrate, such as a printed circuit board or a component for a package of electronic devices; or can include a surface of an electronic device or component. In act 504, a first binary component layer is formed on the substrate. The first binary component can be a material having a higher melting temperature than the second binary component to be subsequently deposited. The first binary component layer can be a gold layer, such as layer 344 illustrated in Figures 26A and 27A. Forming the first binary component layer and other material layers included in the various structures and methods disclosed herein may be by physical vapor deposition (sputter or vapor deposition), chemical vapor deposition, electroplating, wire mesh Printing or any other method of material deposition known in the art is accomplished. In act 506, a barrier layer is formed on the first binary component layer. For example, the barrier layer can include titanium, platinum, nickel, indium oxide, tin, or a combination thereof. For example, the barrier layer can be the barrier layer 418a illustrated in Figure 26A or the barrier layer 426a illustrated in Figure 27A. At act 508, a second binary component layer is formed on the barrier layer deposited in act 506. The second binary component layer comprises or consists of a material having a lower melting temperature than the material of the first binary component layer. For example, if the first binary component layer is formed of gold, the second binary component layer may be formed of indium. The second binary component layer can be, for example, layer 410 as illustrated in Figure 26A or layer 420 illustrated in Figure 27A. At act 510, a second barrier layer is formed on the second binary component layer deposited in act 508. The second barrier layer is similar or identical in material and/or thickness to the barrier layer deposited in act 506. The second barrier layer can be, for example, the barrier layer 418b illustrated in Figure 26A or the barrier layer 426b illustrated in Figure 27A. In act 512, another (second) first binary component layer is formed on the second barrier layer. The other first binary component layer can be similar or identical to the first binary component layer deposited in act 504 in terms of material and/or thickness. Another first binary component layer can be, for example, layer 412 illustrated in Figure 26A or layer 422 illustrated in Figure 27A. In act 514, a third barrier layer is formed on the other first binary component layer. The third barrier layer may be similar or identical to the barrier layer deposited in act 506 in terms of material and/or thickness. The third barrier layer can be, for example, the barrier layer 418c illustrated in Figure 26A or the barrier layer 426c illustrated in Figure 27A. In act 516, another (second) second binary component layer is formed on the barrier layer deposited in act 514. The other second binary component layer may be similar or identical to the second binary component layer deposited in act 508 in terms of material and/or thickness. Another second binary component layer can be, for example, layer 414 illustrated in Figure 26A or layer 424 illustrated in Figure 27A. In act 518, a fourth barrier layer is formed on the other second binary component layer. The fourth barrier layer may be similar or identical to the barrier layer deposited in act 506 in terms of material and/or thickness. The fourth barrier layer can be, for example, the barrier layer 418d illustrated in Figure 26A or the barrier layer 426d illustrated in Figure 27A. Figure 29 illustrates a flow chart of another method of forming a joint structure, generally indicated at 520. The actions 522, 524, 526, 528, 530, 532, 534, 536, and 538 of the method of FIG. 29 correspond to actions 502, 504, 506, 508, 510, 512, 514, 516, and 518 of the method of FIG. 28, respectively. The method of Figure 29 specifically indicates that the material of the first binary component layer is gold and the material of the second binary component layer is indium. The barrier layer of the method of Figure 29 can be similar or identical to the barrier layer of the method of Figure 28 in terms of material and thickness. 30 and 31 illustrate a flow chart of a method of joining a first assembly to a second assembly, generally indicated at 540 and 560, respectively. In some embodiments, one or both of the first assembly and the second assembly comprise a substrate, for example, a semiconductor substrate, a printed circuit board, or a package for an electronic device that can include an active device. In other embodiments, one or both of the first assembly and the second assembly include electronic devices, device packages, and/or other components of the electronic system. The first assembly and the second assembly are not limited to have any particular type. In act 542 of method 540, a first assembly having a first binary component layer on the substrate is provided. The first binary component layer is a gold layer in some embodiments (see act 562 of method 560). In act 544 of method 540, a second assembly having a plurality of binary layers on the substrate is provided. Act 544 can include sub-steps for forming a plurality of binary layers, for example, one or more of acts 502 through 518 or acts 522 through 538 of methods 500 and 520, respectively. The plurality of binary layers, in some embodiments, are structures comprising a plurality of gold and indium layers (see act 564 of method 560, and the structures illustrated in Figures 26A and 27A). In act 546 of method 540 and act 566 of method 560, the second assembly is positioned against the first assembly. In act 548 of method 540, the first assembly and the second assembly are heated to a temperature above the melting point of the second binary component but below the melting point of the first binary component. In some embodiments, the temperature is above the melting point of indium but below the melting point of gold (see act 568 of method 560). In act 550 of method 540, the temperature of the assembly is maintained to promote interdiffusion of the first binary component and the second binary component to form an alloy from the first binary component and the second binary component. In some embodiments, the alloy is formed by interdiffusion of gold and indium (see act 570 of method 560). The variability in the fabrication process including TLP bonding can affect the quality of the bond formed by the material used to form the TLP bond. In some embodiments, the final bond is formed by a quantity of a lower melting material such as indium and an amount of a higher melting material such as gold, which results in a conformal bond formed on the substrate, wherein the alloyed bond The material is a stoichiometric intermetallic alloy of the first material and the second material, for example, AuIn2 . As the term is used herein, a stoichiometric intermetallic alloy has a chemical formulaA a B b Alloy, of whichA andB Metal, anda andb Both can be expressed as integers. Stoichiometric intermetallic alloys may also include chemical formulasA a B b C c Ternary alloy system, of whichA , B andC Each of them is metal, anda , b andc Each of them can be expressed as an integer. The stoichiometric intermetallic alloy may also include alloys having more than three metal components. Bonding formed by a quantity of a lower melting material such as indium and a quantity of a higher melting material such as gold is illustrated, for example, in Figures 24C and 27C, which results in conformal bonding to the formation over the substrate, wherein The alloyed joining material is a stoichiometric intermetallic alloy of the first material and the second material. If too little low melting point material is present, the resulting joining element can be similar to the joining element shown in Figure 23D, wherein there is an insufficient amount of low melting point material to flow around the surface defects 336a, 336b in the lower substrate 334, resulting in a final joint. The shape is conformed to the lower substrate and thus is weaker than the bonding illustrated in Figure 24C or Figure 27C. If an excess of low melting point material is present, the phase comprising a higher amount of lower melting material (e.g., a lower melting material having an amount greater than the stoichiometric amount of intermetallic alloy) can remain in the finished joint. This description is shown in FIG. In FIG. 32, there is an excess of indium 805 in the bonding element prior to bonding or alternatively insufficient gold in the gold layers 810a, 810b, and 810c to form AuIn throughout the bonding element 815 during bonding.2 Intermetallic compound. As a result, the joined element 815 includes a placement in AuIn2 An indium-rich layer 825 between the intermetallic compound layers 820. Indium-rich layer 825 compared to AuIn2 The intermetallic compound layer 820 has a lower melting temperature so that the indium rich layer 825 can melt and reflow during subsequent processing including the device or package via the bonding element 815, potentially causing failure of the bonded component 815 or indium migration to Undesired locations, potentially leading to reliability issues. To beware of process variations that may result in non-ideal engagement elements being the only form of engagement elements present in the joint or package, and/or off-target processes (such as those illustrated in Figure 23D or Figure 32), may be intentionally Redundant joint elements are formed at different ratios of low melting point material to high melting point material. Even in the case of process variability, one of the redundant joint elements will likely have a structure similar to that described in Figure 24C or Figure 27C, including conformally formed stoichiometric intermetallic alloys, even One or more of the other joined elements have a less desirable structure, for example, as illustrated in Figure 23D or Figure 32. Joining elements having an intentionally higher amount of usable higher melting point material can be formed in various ways than would be necessary to form a stoichiometric alloy with a lower melting point material (given a "target" process). In a first example, as illustrated in FIG. 33A, the bonding material element can be formed with a structure 830 that includes an excess volume of higher melting material 810 relative to the volume of the lower melting material 805 in the complementary structure 835. The joined component 840 formed by interdiffusion of the materials in structures 830 and 835 can have an excess of higher melting material 810 than the stoichiometric alloy. The resulting alloy can be non-stoichiometric due to excess higher melting point materials (eg, AuIn(x<2) , as illustrated in Figure 33A). In various embodiments, the structures 830, 835 can be in the form of elongated structures as illustrated in Figure 33B, or in the form of a ring structure as illustrated in Figure 33C, or a combination thereof. In some embodiments, the structure illustrated in Figure 33C can be adapted for use when the bonded component 840 is intended to be used to form electrical contact with the device. Joining elements having a suitable or substantially appropriate amount of a useful higher melting point material (given a "target" process) to form a stoichiometric alloy with the lower melting material can be formed in a variety of ways. In a first example, as illustrated in FIG. 34A, a bonding material structure having a structure 845 comprising a higher melting material 810 includes a sufficient volume of higher melting material relative to the volume of the lower melting material 805 in the complementary structure 850. 810, such that the resulting bonded component 855 formed by interdiffusion of materials in structures 845, 850 has a suitable or substantially appropriate amount of higher melting material 810 to form a joined component that is substantially or entirely a stoichiometric intermetallic alloy. In various embodiments, structures 845, 850 can be in the form of elongated structures as illustrated in Figure 34B, or in the form of a ring structure as illustrated in Figure 34C, or a combination thereof. In some embodiments, the structure illustrated in Figure 34C may be suitable for use when the bonded component 855 is intended to be used to form electrical contact with the device. In FIG. 34C, structure 845 has a diameter that is substantially the same as structure 850 and is located below structure 850 and is therefore not visible. Joining elements having an intentionally lower amount of usable higher melting point material can be formed in various ways than would be necessary to form a stoichiometric alloy with a lower melting point material (given a "target" process). In a first example, as illustrated in FIG. 35A, the bonding material element can be formed with a structure 860 that includes a higher melting material present in an amount less than the amount of the lower melting material 805 in the complementary structure 865. 810, such that the resulting bonded component 870 formed by interdiffusion of materials in structures 860, 865 may not form a stoichiometric intermetallic alloy throughout the bonded component 870. As illustrated in FIG. 35A, the joined component 870 can have one or more portions including a stoichiometric intermetallic alloy 875 and one or more portions 880 including a lower rich melting point material 805 compared to the stoichiometric intermetallic alloy 875. . In various embodiments, structures 860, 865 can be in the form of elongated structures as illustrated in Figure 35B, or in the form of annular structures illustrated in Figure 35C, or a combination thereof. In some embodiments, the structure illustrated in Figure 35C may be suitable for use when the bonded component 870 is intended to be used to form electrical contact with the device. In other embodiments, the relative amount of lower melting material and higher melting material in the TLP bond can be controlled by selecting the distance between adjacent joining elements. During bonding, the lower melting material and the higher melting material only diffuse a finite distance, and thus only materials within a certain distance of the TLP bonding structure can be used to interdiffuse with the material of the TLP bonding structure. For example, FIGS. 36A and 36B illustrate a pair of bonding structures 885 that include a lower melting material 805 that is spaced close to each other on a film 890 to which a higher melting material 810 is bonded. The joint structures 885 are spaced sufficiently close together that there is an insufficient amount of higher melting material 810 in the film 890 at a distance at which the lower melting material 805 and the higher melting material 810 can diffuse during bonding, such that the entire melting point cannot be A stoichiometric intermetallic alloy is formed within the joining element 895. The joined component 895 thus includes a plurality of portions 900 that are richer in the lower melting material than the stoichiometric intermetallic alloy. In another joint structure 905 that includes a lower melting point material 805 that is further spaced from the adjacent joint structure than the joint structure 885, is sufficiently short in the film 890 that the lower melting point material 805 and the higher melting point material 810 are A sufficient amount of higher melting point material 810 is available within the distance of interdiffusion during bonding to form a stoichiometric alloy throughout or substantially the entire bonded component 910. In some embodiments, a plurality of TLP bonding layer elements can be used to provide a redundant seal around a region of the device, at least two of the plurality of TLP bonding layer components having different target ratios of lower melting material to higher melting material . For example, a device package similar to the device package shown in FIGS. 16A and 16B can be provided with a plurality of TLP engagement elements 308 that form a closed shape, such as a ring or rectangle, around the device to form a gas tightly surrounding device 312. Seal the pocket. An example of this situation is illustrated in Figures 37A and 37B. As illustrated, the package 300' includes three rectangular TLP engagement elements 306A, 306B, and 306C that surround the device 312. At least two of elements 306A, 306B, and 306C have different ratios of lower melting material to higher melting material. For example, the innermost TLP bonding element 306A can have a target ratio of a lower melting material to a higher melting material (eg, indium to gold), which results in the formation of the bonded component 306A entirely by, for example, AuIn.2 The composition of the stoichiometric intermetallic alloy. One of elements 306B and 306C may have a greater ratio of lower melting material to higher melting material than element 306A, and the other of elements 306B and 306C may have a lower melting point material than element 306A. A lower ratio to the higher melting point material. If the process for forming the TLP joint elements 306A, 306B, and 306C meets the objectives, the element 306A will form a joined element that is comprised of a stoichiometric intermetallic alloy that hermetically seals the device 312 in the pocket 310. One of element 306B or 306C if the manufacturing process deviates slightly from the target and more or less than one of the desired amount of lower melting material and higher melting material is deposited such that the ratio of such materials in structure 306A is not desired The closer to the desired ratio of the lower melting material and the higher melting material will be and a strong joint structure will be formed to hermetically seal the device 312 within the pocket. While the three TLP engagement elements are illustrated in Figures 37A and 37B, it should be understood that more than three or fewer than three TLP engagement elements can be used in different embodiments. In TLP bonding elements of more low melting point materials, the low melting point material may have a tendency to flow outward from the TLP bonding elements during the bonding process. Additionally, in a TLP joint element rich in low melting point materials, the joined element may comprise a portion rich in a lower melting point material and having a lower melting point than the remainder of the joined element and being meltable during operation or further processing And flow. It may be desirable to form a TLP joint element having one or more features that impede flow through the molten lower melting material material to an undesired location or to an undesired location, such as toward a device or joint in the package. Pad, where the molten material can interfere with the operation of the device. In some embodiments, for example, as illustrated in FIG. 38, the joining elements including the following are provided with protrusions 810d having a higher melting point material: a layer 810a, 810b having a higher melting point material (eg, gold) and a lower melting point. Portion 885 of material (eg, indium) layer 805; and portion 890 comprising higher melting material layer 810c. The protrusion 810d is illustrated on top of the portion 890, but may alternatively or additionally be disposed on the bottom of the layer 810b. When portions 885 and 890 are brought together and heated, the lower melting material melts and interdiffuses with the higher melting material to form joined component 895. If the bonding element forms a stoichiometric intermetallic alloy in the entire bonded component 895 (eg, AuIn2 The necessary amount of material has a plurality of lower melting point materials, and the joined component can include a portion 900 of the stoichiometric intermetallic alloy and a portion 905 of the lower rich melting material compared to the stoichiometric intermetallic alloy. The protrusions 810d promote the melting of the lower melting point material during bonding and/or the portions of the portion 900 that are meltable during operation, while forming the bonded component 895, or after forming the bonded component, are detached in a predefined direction. The flow of component 895. The protrusion 810d provides an additional source of higher melting material that can interdiffuse with excess lower melting material, wherein the protrusion 810d is present to form a stoichiometric intermetallic alloy in the region where the protrusion 810d is present or around the protrusion. The protrusion 810d can thus seal one side of the engagement element 895 such that no molten material can escape from the sealed side. The molten material may therefore preferentially or exclusively escape from the engaged element 895 from the side opposite the side where the protrusion 810d is present in the direction of arrow A in FIG. The device, bond pad or other structure that should be protected from contact with the molten material from the bonded component during bonding and/or during operation can be positioned over the bonded component 895 and the molten material can preferentially or exclusively escape On the opposite side of the side. For example, in the device package illustrated in Figures 37A and 37B, TLP material elements 306A, 306B, and 306C can be formed similar to the bonding elements of Figure 38, wherein any molten material from TLP bonding elements 306A, 306B, and 306C The preferential direction of the escape is toward the other of the TLP engagement elements 306A, 306B, and 306C. TLP joint elements 306A, 306B, and 306C can thus be used to confine any molten material that escapes from TLP joint elements 306A, 306B, and 306C between each other. For example, TLP engagement element 306A can be configured such that any molten material from element 306A will flow toward element 306B rather than toward device 312. Additionally, the device package 300' can be provided with one or more TLP posts 306D (not shown in FIG. 37B) that bridge the area between one or more of the TLP engagement elements 306A, 306B, and 306C to provide a pair of self-TLPs. Further limitation of any molten material that escapes any of the engaging elements 306A, 306B, and 306C. In another embodiment, the bond pads or contacts of the device may be provided with a plurality of TLP bonding elements, or a higher melting material (eg, gold) and a lower melting material (eg, indium) having different ratios of TLP bonding elements. ) area. For example, as illustrated in Figure 39, the contacts 910 of the device can be provided with four zones 915a, 915b, 915c, 915d of TLP engagement elements, at least two of which have different ratios of higher melting point materials With lower melting point materials. At least one of the regions 915a, 915b, 915c, 915d may have a target ratio of a higher melting material and a lower melting material that, after bonding, will result in the region fully or fully forming a stoichiometric intermetallic alloy (eg, AuIn)2 ). At least one other of the regions 915a, 915b, 915c, 915d may have a target ratio of a higher melting material and a lower melting material below a ratio sufficient to form a stoichiometric intermetallic alloy throughout the region after bonding. At least another of the regions 915a, 915b, 915c, 915d may have a target ratio of a higher melting material and a lower melting material, the target ratio being higher than a ratio sufficient to form a stoichiometric intermetallic alloy throughout the region after bonding. Thus, even if the process of forming regions 915a, 915b, 915c, 915d deviates from the target, for example, depositing one of excess or lower than the desired amount of lower melting material or higher melting material, it will most likely be that region 915a At least one of 915b, 915c, 915d will have a ratio of lower melting material to higher melting material to form a joint/contact element that is fully or fully fully composed of the desired stoichiometric intermetallic. The structure of Figure 39 can additionally or alternatively be used to bond one substrate, such as a wafer, to another substrate and/or to adhere portions of the device package to each other. It should be appreciated that the structure of FIG. 39 can include more than four or fewer than four different zones of the TLP engagement element, and that the zones can be shaped differently than illustrated, for example, shaped as a strip, disk, or any other. The shape you want. It should be appreciated that any of the TLP bonding elements illustrated in Figures 32-39 can include any of the previously discussed structures, such as the multilayer structure of any of Figures 24A, 25A, or 26A. Or the stepped structure of Figure 27A; and may be included in the apparatus illustrated in Figures 40 and/or 41 described below. 40 illustrates an embodiment of an electronic module that can be formed by a method that includes one or more of the structures and methods explained herein. Module 600 includes a substrate 602 on which a radio frequency (RF) circuit 604 is formed. The RF circuit can be, for example, a filter or a duplexer. At least one device 606 is sealed or bonded to a portion of the RF circuit using a TLP bonding or sealing method in accordance with the methods disclosed herein. In some embodiments, electrical connections are made between contacts on device 606 and contacts in the RF circuit by a TLP bonding method as disclosed herein (eg, as described with reference to Figures 18A and 18B). In other embodiments, device 606 can be hermetically sealed using a TLP sealing method as disclosed herein (eg, see FIGS. 16A and 16B). 41 illustrates an embodiment of a wireless device 700 that can be formed by a method that includes one or more of the bonding elements and methods disclosed herein. The wireless device includes several components, including a user interface 702, a memory 704, a baseband subsystem 706, a power management subsystem 708, a transceiver 710, a power amplifier 712, an antenna switch module 714, and a low noise amplifier. 718 and antenna 720. Any one or more of these components can be bonded or sealed to a substrate of a wireless device using embodiments of the TLP bonding or sealing elements and methods disclosed herein. In some examples, one or more of the components of wireless device 700, such as power amplifier 712, antenna switch module 714, and low noise amplifier 718, are included in module 600 as illustrated in FIG. Or alternatively, it may be a device 606 that is sealed and/or bonded to the RF circuit 604. Unless the context clearly requires otherwise, the words "comprises" and the like should be interpreted inclusive, and not exclusive or exhaustive in the context of the specification and claims; in other words, the meaning of "including (but not limited to)" . As used generally herein, the term "coupled" refers to two or more than two elements that may be directly connected or connected by means of one or more intermediate elements. In addition, the words "herein," "above," "below," and the like, when used in the present application, shall mean the application as a whole and not any particular part of the application. Where the context permits, the use of the singular or plural number of the above [embodiments] may also include the plural or singular number, respectively. Refer to the word "or" in the list of two or more items, which covers all of the following explanations of the term: any of the items in the list, all items in the list, and any combination of items in the list. The above detailed description of the embodiments of the invention is not intended to be It will be appreciated by those skilled in the art that, <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; For example, although the program or acts are presented in a predetermined order, alternative embodiments can perform routines with steps in a different order, or use a system with components, and can be deleted, moved, added, subdivided, combined, and/or modified. Some programs or components. Each of these programs or components can be implemented in a number of different ways. Also, although programs or actions are sometimes shown as being performed continuously, such programs or acts may alternatively be performed in parallel or may be performed at different times. The teachings of the present invention provided herein are applicable to other systems and are not necessarily the systems described above. The elements and acts of the various embodiments described above can be combined to provide additional embodiments. Having thus described several aspects of the embodiments of the present invention, it will be understood that various changes, modifications and Any feature described in any embodiment can be included in or substituted for any feature of any other embodiment. Such changes, modifications, and improvements are intended to be part of the invention and are intended to be within the scope of the invention. Therefore, the foregoing description and drawings are merely illustrative.

10‧‧‧結構 12‧‧‧第一基板或組件 14‧‧‧接合材料層 16‧‧‧第二基板或組件 20‧‧‧結構 22‧‧‧基板 24‧‧‧上表面 26‧‧‧凹部 28‧‧‧導電塗層 30‧‧‧第一組份材料 32‧‧‧第二組份材料 34‧‧‧二元合金 50‧‧‧溫度分佈 100‧‧‧顆粒 102‧‧‧核心 104‧‧‧塗層 106‧‧‧外層 108‧‧‧障壁層 120‧‧‧未加熱狀態 130‧‧‧狀態 132‧‧‧液化材料 140‧‧‧經合金化狀態 142‧‧‧經合金化顆粒 150‧‧‧可經實施以製造具有如本文中所描述之一或多個特徵之經塗佈顆粒的製程 152‧‧‧區塊 154‧‧‧區塊 160‧‧‧可經實施以塗覆具有如本文中所描述之一或多個特徵之顆粒的製程 162‧‧‧區塊 163‧‧‧區塊 170‧‧‧懸浮液 172‧‧‧溶液 174‧‧‧施配設備 176‧‧‧箭頭 178‧‧‧基板/半導體晶圓 180‧‧‧自旋 182‧‧‧箭頭 184‧‧‧表面 186‧‧‧噴塗 188‧‧‧施配設備 190‧‧‧單元 192‧‧‧接觸襯墊 194‧‧‧導電跡線 200‧‧‧實例組態 202‧‧‧基板 204‧‧‧導電層 206‧‧‧組件 210‧‧‧實例組態 212‧‧‧下伏結構 214‧‧‧導電層 220‧‧‧實例組態 222‧‧‧結構 224‧‧‧導電層 226‧‧‧凹部 230‧‧‧實例組態 232‧‧‧封裝件 234‧‧‧導電層 240‧‧‧實例組態 242‧‧‧基板 244‧‧‧層 246‧‧‧介層孔 250‧‧‧實例組態 252‧‧‧基板 256‧‧‧介層孔 300‧‧‧封裝件 300'‧‧‧封裝件 302‧‧‧基底基板 304‧‧‧頂蓋基板 305‧‧‧結構 306‧‧‧矩形 306A、306B、306C‧‧‧矩形暫態液相(TLP)接合元件 306D‧‧‧暫態液相(TLP)支柱 308‧‧‧暫態液相(TLP)材料結構 310‧‧‧區域或凹穴 312‧‧‧裝置 320‧‧‧基板 322‧‧‧裝置 324‧‧‧暫態液相(TLP)材料結構 332‧‧‧第一基板 334‧‧‧第一金層 336a、336b‧‧‧金凸塊/表面缺陷 342‧‧‧第二基板 344‧‧‧第二金層 350‧‧‧結構 352‧‧‧接合材料層/銦層 360‧‧‧結構 362‧‧‧熔融之接合層 370‧‧‧結構 372‧‧‧合金接合層 380‧‧‧第二接合材料之層 382‧‧‧第三金層 384‧‧‧合金層 390‧‧‧接合材料層 392‧‧‧第三金層 394‧‧‧第一合金層 396‧‧‧第二合金層 398‧‧‧合金化之接合材料層 400‧‧‧接合材料層 402‧‧‧上部擴散障壁層 404‧‧‧下部擴散障壁層 410‧‧‧銦層 412‧‧‧金層/高熔點材料層 414‧‧‧銦層 416‧‧‧金層/高熔點材料層 418‧‧‧經合金化接合層 418a、418b、418c、418d‧‧‧障壁層 420‧‧‧接合材料層 422‧‧‧高熔融溫度材料層 424‧‧‧接合材料層 426a、426b、426c、426d‧‧‧可選之障壁層 428‧‧‧上表面 430‧‧‧台階/表面 432‧‧‧區 434‧‧‧經合金化接合層 502、504、506、508、510、512、514、516、518‧‧‧動作 522、524、526、528、530、532、534、536、538‧‧‧動作 540‧‧‧方法 542、544、546、548、550‧‧‧動作 560‧‧‧方法 562、564、566、568、570‧‧‧動作 600‧‧‧模組 602‧‧‧基板 604‧‧‧射頻(RF)電路 606‧‧‧裝置 700‧‧‧無線裝置 702‧‧‧使用者介面 704‧‧‧記憶體 706‧‧‧基頻子系統 708‧‧‧功率管理子系統 710‧‧‧收發器 712‧‧‧功率放大器 714‧‧‧天線開關模組 718‧‧‧低雜訊放大器 720‧‧‧天線 805‧‧‧過量之銦 810‧‧‧過量之較高熔點材料 810a‧‧‧金層/高熔點材料層 810b‧‧‧金層/高熔點材料層 810c‧‧‧金層/高熔點材料層 810d‧‧‧突起 815‧‧‧經接合元件 820‧‧‧AuIn<sub>2</sub>金屬間化合物層 825‧‧‧富銦層 830‧‧‧結構 835‧‧‧互補結構 840‧‧‧經接合元件 845‧‧‧結構 850‧‧‧結構 855‧‧‧經接合元件 860‧‧‧結構 865‧‧‧結構 870‧‧‧所得經接合元件 875‧‧‧化學計量金屬間合金 880‧‧‧部分 885‧‧‧部分 890‧‧‧膜/部分 895‧‧‧經接合元件 900‧‧‧部分 905‧‧‧接合結構 910‧‧‧經接合元件/觸點 915a、915b、915c、915d‧‧‧區 A‧‧‧箭頭 d1、d2、d3‧‧‧直徑 t1、t2、t3‧‧‧厚度 T‧‧‧第一溫度 T1‧‧‧第一組份材料30之熔點 T2‧‧‧第二組份材料32之熔點 T3‧‧‧熔融溫度 10‧‧‧ Structure 12‧‧‧ First substrate or component 14‧‧‧ Bonding material layer 16‧‧‧Second substrate or component 20‧‧‧ Structure 22‧‧‧Substrate 24‧‧‧ Upper surface 26‧‧‧ Concave 28‧‧‧ Conductive coating 30‧‧‧ First component material 32‧‧‧Second component material 34‧‧‧ binary alloy 50‧‧‧ Temperature distribution 100‧‧‧Particles 102‧‧‧ Core 104 ‧ ‧ coating 106 ‧ ‧ outer 108 ‧ ‧ barrier layer 120 ‧ ‧ unheated state 130 ‧ ‧ state 132 ‧ ‧ liquefied material 140 ‧ ‧ alloyed state 142 ‧ ‧ alloyed granules 150‧‧‧ Processes that can be implemented to produce coated granules having one or more of the features described herein. Section 152‧‧‧ Blocks 160‧‧‧ can be implemented for coating Processes with granules of one or more of the characteristics as described herein 162‧‧‧ Blocks 163‧‧‧Sections 170‧‧‧ Suspensions 172‧‧‧ Solutions 174‧‧‧ Distribution Equipment 176‧‧‧ Arrow 178‧‧‧Substrate/Semiconductor Wafer 180‧‧‧Spin 182‧‧‧Arrow 184‧ ‧Surface 186‧‧ ‧Spray 188‧‧‧Materials 190‧‧‧Units 192‧‧‧Contact pads 194‧‧‧ Conductive traces 200‧‧‧Example configuration 202‧‧‧Substrate 204‧‧‧ Conductive Layer 206‧‧‧Component 210‧‧‧Example configuration 212‧‧‧Underlying structure 214‧‧‧ Conductive layer 220‧‧‧Example configuration 222‧‧‧ Structure 224‧‧‧ Conductive layer 226‧‧‧ recess 230 ‧‧‧Example configuration 232‧‧‧Package 234‧‧‧ Conductive layer 240‧‧‧Example configuration 242‧‧‧Substrate 244‧‧‧layer 246‧‧‧Interlayer hole 250‧‧‧Instance configuration 252 ‧‧‧Substrate 256‧‧・Medium hole 300‧‧‧Package 300'‧‧‧Package 302‧‧‧Base substrate 304‧‧‧Top cover substrate 305‧‧‧ Structure 306‧‧‧Rectangle 306A, 306B 306C‧‧‧ Rectangular Transient Liquid Phase (TLP) Joint Element 306D‧‧‧ Transient Liquid Phase (TLP) Pillar 308‧‧ Transient Liquid Phase (TLP) Material Structure 310‧‧‧ Area or Cavity 312‧ ‧‧Device 320‧‧‧Substrate 322‧‧‧Device 324‧‧‧ Transient Liquid Phase (TLP) Material Structure 332‧‧ A substrate 334‧‧‧ first gold layer 336a, 336b‧‧ gold bumps/surface defects 342‧‧‧second substrate 344‧‧‧second gold layer 350‧‧‧structure 352‧‧‧ bonding material layer/ Indium layer 360‧‧‧Structure 362‧‧‧Melted joint layer 370‧‧‧Structure 372‧‧‧Alloy joint layer 380‧‧‧Second joint material layer 382‧‧‧ Third gold layer 384‧‧‧ alloy Layer 390‧‧‧ Bonding material layer 392‧‧‧ Third gold layer 394‧‧‧ First alloy layer 396‧‧‧Second alloy layer 398‧‧‧ Alloyed bonding material layer 400‧‧‧ bonding material layer 402 ‧‧‧Upper diffusion barrier layer 404‧‧‧ Lower diffusion barrier layer 410‧‧‧Indium layer 412‧‧‧ Gold layer/high melting point material layer 414‧‧‧Indium layer 416‧‧‧ Gold layer/high melting point material layer 418 ‧‧‧ alloyed joint layer 418a, 418b, 418c, 418d‧‧ ‧ barrier layer 420‧‧ ‧ bonding material layer 422‧‧ ‧ high melting temperature material layer 424‧‧ ‧ bonding material layers 426a, 426b, 426c, 426d ‧‧‧Optional barrier layer 428‧‧‧Upper surface 430‧‧‧ steps/surface 432 ‧ ‧ Area 434‧‧‧ Alloyed Bonding Layers 502, 504, 506, 508, 510, 512, 514, 516, 518‧‧‧ Actions 522, 524, 526, 528, 530, 532, 534, 536, 538 ‧‧‧Action 540‧‧‧Methods 542, 544, 546, 548, 550 ‧ ‧ Action 560‧ ‧ Method 562, 564, 566, 568, 570 ‧ ‧ Action 600‧‧‧ Module 602‧‧ Substrate 604‧‧‧ Radio Frequency (RF) Circuit 606‧‧‧Device 700‧‧‧Wireless Device 702‧‧ User Interface ‧‧‧‧Memory 706‧‧‧Base Frequency Subsystem 708‧‧ Power Management Subsystem 710‧‧‧Transceiver 712‧‧‧Power Amplifier 714‧‧‧Antenna Switch Module 718‧‧‧Low Noise Amplifier 720‧‧‧Antenna 805‧‧‧Excessive Indium 810‧‧‧Excessive Higher Melting Point Material 810a‧‧‧ Gold/High Melting Material Layer 810b‧‧‧ Gold/High Melting Material Layer 810c‧‧‧ Gold/High Melting Material Layer 810d‧‧‧Protrusion 815‧‧‧With Joint Element 820‧‧‧AuIn <sub>2</sub> intermetallic compound layer 825‧‧‧ indium-rich layer 830‧‧‧ structure 835‧‧ ‧ complementary junction 840‧‧‧Means of joints 845‧‧‧Structure 850‧‧‧Structure 855‧‧‧Means of joints 860‧‧‧Structure 865‧‧‧Structure 870‧‧‧ obtained jointed elements 875‧‧ ‧ stoichiometric metal Alloy 880 ‧ ‧ part 885 ‧ ‧ part 890 ‧ ‧ film / part 895 ‧ ‧ joint element 900 ‧ ‧ part 905 ‧ ‧ joint structure 910 ‧ ‧ jointed elements / contacts 915a, 915b, 915c, 915d‧‧‧A‧‧‧Arrows d1, d2, d3‧‧‧ Diameter t1, t2, t3‧‧‧ Thickness T‧‧‧ First temperature T1‧‧‧ First component material 30 melting point T2 ‧‧‧The melting point of the second component material 32 T3‧‧‧ melting temperature

隨附圖式並不意在按比例繪製。在圖式中，各種圖中說明的各相同或幾乎相同之組件由類似數字表示。為清晰性之目的，並非每種組件都可在每個圖式中標註出。在圖式中： 圖1說明接合至彼此之一對基板； 圖2說明保形地塗佈有導電材料層之基板； 圖3說明根據一實施例之合金系統； 圖4說明用於接合、密封或塗佈方法之實施例中的溫度分佈； 圖5說明在執行接合、密封或塗佈方法中使用之結構的實施例； 圖6說明在執行接合、密封或塗佈方法中使用之結構的另一實施例； 圖7說明在執行接合、密封或塗佈方法中使用之結構的另一實施例； 圖8A說明在執行接合、密封或塗佈方法中使用之處於方法中之第一階段的結構群組之實施例； 圖8B說明圖8A之結構之群組的處於方法中之第二階段的實施例； 圖8C說明圖8A之結構之群組的處於方法中之第三階段的實施例； 圖9A說明在執行接合、密封或塗佈方法中使用之結構的另一實施例； 圖9B說明在執行接合、密封或塗佈方法中使用之結構的另一實施例； 圖9C說明在執行接合、密封或塗佈方法中使用之結構的另一實施例； 圖10說明用於形成供在執行接合、密封或塗佈方法中使用之結構之實施例的方法之實施例的流程圖； 圖11A說明供在執行接合、密封或塗佈方法中使用之結構在圖10之方法之第一動作之後的實施例； 圖11B說明在圖10之方法之第二動作之後的供在執行接合、密封或塗佈方法中使用的結構； 圖12說明對物件應用供在執行接合、密封或塗佈方法中使用的結構之實施例的方法之實施例； 圖13A說明在執行接合、密封或塗佈方法中使用之結構之實施例的懸浮液； 圖13B說明塗覆至物件的圖13A之懸浮液； 圖14A說明在上面可應用在執行接合、密封或塗佈方法中使用之結構之實施例的晶圓； 圖14B說明將在執行接合、密封或塗佈方法中使用之結構之實施例應用至圖14A之晶圓； 圖14C說明用在執行接合、密封或塗佈方法中使用之結構之實施例形成於圖14A之晶圓上的裝置之特徵； 圖15A說明用本文中揭示之結構或方法之實施例接合至基板之裝置； 圖15B說明用本文中揭示之結構或方法之實施例塗佈有導電膜之基板； 圖15C說明用本文中揭示之結構或方法之實施例塗佈有導電膜的另一基板； 圖15D說明用本文中揭示之結構或方法之實施例塗佈有導電膜的另一基板； 圖15E說明形成於基板中且用本文中揭示之結構或方法之實施例塗佈有導電膜的介層孔； 圖15F說明形成於基板中且用本文中所揭示之結構或方法之實施例填充有導電材料的介層孔； 圖16A為包括經氣密地密封之裝置的封裝件之實施例的平面圖； 圖16B為圖16A之封裝件之橫截面。 圖17A說明用本文中所揭示之結構或方法之實施例接合至基板之裝置的實施例； 圖17B說明圖17A之裝置及基板的橫截面； 圖18A說明用本文中所揭示之結構或方法之實施例電耦接至基板之裝置的實施例； 圖18B說明圖18A之裝置及基板的橫截面； 圖19說明將第一總成接合至第二總成之方法之實施例的第一部分； 圖20說明將第一總成接合至第二總成之方法之實施例的第二部分； 圖21說明將第一總成接合至第二總成之方法之實施例的第三部分； 圖22說明將第一總成接合至第二總成之方法之實施例的第四部分； 圖23A說明將第一總成接合至第二總成之方法之實施例的第一部分； 圖23B說明將第一總成接合至第二總成之方法之實施例的第二部分； 圖23C說明將第一總成接合至第二總成之方法之實施例的第三部分； 圖23D說明將第一總成接合至第二總成之方法之實施例的第四部分； 圖24A說明將第一總成接合至第二總成之方法之實施例的第一部分； 圖24B說明將第一總成接合至第二總成之方法之實施例的第二部分； 圖24C說明將第一總成接合至第二總成之方法之實施例的第三部分； 圖25A說明將第一總成接合至第二總成之方法之實施例的第一部分； 圖25B說明將第一總成接合至第二總成之方法之實施例的第二部分； 圖25C說明將第一總成接合至第二總成之方法之實施例的第三部分； 圖26A說明將第一總成接合至第二總成之方法之實施例的第一部分； 圖26B說明將第一總成接合至第二總成之方法之實施例的第二部分； 圖26C說明將第一總成接合至第二總成之方法之實施例的第三部分； 圖27A說明將第一總成接合至第二總成之方法之實施例的第一部分； 圖27B說明將第一總成接合至第二總成之方法之實施例的第二部分； 圖27C說明將第一總成接合至第二總成之方法之實施例的第三部分； 圖28說明用於在基板上形成接合結構之方法之實施例的流程圖； 圖29說明用於在基板上形成接合結構之另一方法之實施例的流程圖； 圖30說明用於將第一總成接合至第二總成之方法之實施例的流程圖； 圖31說明用於將第一總成接合至第二總成之方法之另一實施例的流程圖； 圖32說明包括兩個部分之接合結構及由接合兩個部分產生之經接合結構的實施例； 圖33A說明包括兩個部分之接合結構及由接合兩個部分產生之經接合結構的另一實施例； 圖33B說明圖33A之兩個部分之組態的實施例； 圖33C說明圖33A之兩個部分之組態的另一實施例； 圖34A說明包括兩個部分之接合結構及由接合兩個部分產生之經接合結構的另一實施例； 圖34B說明圖34A之兩個部分之組態的另一實施例； 圖34C說明圖34A之兩個部分之組態的另一實施例； 圖35A說明包括兩個部分之接合結構及由接合兩個部分產生之經接合結構的另一實施例； 圖35B說明圖35A之兩個部分之組態的實施例； 圖35C說明圖35A之兩個部分之組態的另一實施例； 圖36A說明複數個接合結構及金屬膜在接合之前的實施例； 圖36B說明在接合至金屬膜之後的圖36A之接合結構； 圖37A為經氣密密封之封裝件之實施例的平面圖； 圖37B為圖37A之封裝件之橫截面圖； 圖38說明包括兩個部分之接合結構及由接合兩個部分產生之經接合結構的另一實施例； 圖39為接合結構之另一實施例的平面圖； 圖40說明電子模組之實施例；且 圖41說明無線裝置之實施例。The drawings are not intended to be drawn to scale. In the drawings, identical or nearly identical components illustrated in the various figures are represented by like numerals. For the sake of clarity, not every component can be labeled in every drawing. In the drawings: Figure 1 illustrates a substrate bonded to one another; Figure 2 illustrates a substrate conformally coated with a layer of conductive material; Figure 3 illustrates an alloy system in accordance with an embodiment; Figure 4 illustrates bonding, sealing Or a temperature profile in an embodiment of a coating method; Figure 5 illustrates an embodiment of a structure used in performing a joining, sealing or coating method; Figure 6 illustrates another structure used in performing a joining, sealing or coating method An embodiment; FIG. 7 illustrates another embodiment of a structure for use in performing a bonding, sealing or coating method; FIG. 8A illustrates a structure in a first stage of the method used in performing a bonding, sealing or coating method Embodiments of the group; Figure 8B illustrates an embodiment of the second stage of the method of the group of structures of Figure 8A; Figure 8C illustrates an embodiment of the third stage of the method of the group of structures of Figure 8A; Figure 9A illustrates another embodiment of a structure for use in performing a bonding, sealing or coating method; Figure 9B illustrates another embodiment of a structure for use in performing a bonding, sealing or coating method; Figure 9C illustrates performing bonding Another embodiment of a structure for use in a sealing or coating process; Figure 10 illustrates a flow diagram of an embodiment of a method for forming an embodiment of a structure for use in performing a bonding, sealing or coating process; Figure 11A illustrates An embodiment for the structure used in performing the joining, sealing or coating method after the first action of the method of FIG. 10; FIG. 11B illustrates the joining, sealing or coating after the second action of the method of FIG. Structure used in the cloth method; Figure 12 illustrates an embodiment of a method of applying an embodiment of a structure for use in performing a joining, sealing or coating method to an article; Figure 13A illustrates the use in performing a joining, sealing or coating method a suspension of the embodiment of the structure; FIG. 13B illustrates the suspension of FIG. 13A applied to the article; FIG. 14A illustrates a wafer on which the embodiment of the structure used in performing the bonding, sealing or coating method can be applied; Figure 14B illustrates the application of the structure of the structure used in performing the bonding, sealing or coating method to the wafer of Figure 14A; Figure 14C illustrates the use of the method for performing bonding, sealing or coating methods. Embodiments of the structure are characterized by devices formed on the wafer of FIG. 14A; FIG. 15A illustrates an apparatus for bonding to a substrate using embodiments of the structures or methods disclosed herein; FIG. 15B illustrates implementation of the structures or methods disclosed herein. Example of a substrate coated with a conductive film; Figure 15C illustrates another substrate coated with a conductive film using an embodiment of the structure or method disclosed herein; Figure 15D illustrates the application of an embodiment of the structure or method disclosed herein Another substrate of a conductive film; Figure 15E illustrates a via hole formed in a substrate and coated with a conductive film using an embodiment of the structure or method disclosed herein; Figure 15F illustrates the formation in a substrate and as disclosed herein Embodiments of the structure or method are filled with via holes of a conductive material; Figure 16A is a plan view of an embodiment of a package including a hermetically sealed device; Figure 16B is a cross section of the package of Figure 16A. Figure 17A illustrates an embodiment of a device bonded to a substrate using embodiments of the structures or methods disclosed herein; Figure 17B illustrates a cross-section of the device and substrate of Figure 17A; Figure 18A illustrates the structure or method disclosed herein. Embodiments of an apparatus electrically coupled to a substrate; FIG. 18B illustrates a cross section of the apparatus and substrate of FIG. 18A; FIG. 19 illustrates a first portion of an embodiment of a method of joining a first assembly to a second assembly; 20 illustrates a second portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 21 illustrates a third portion of an embodiment of a method of joining a first assembly to a second assembly; A fourth portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 23A illustrates a first portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 23B illustrates a first The second portion of the embodiment of the method of joining the assembly to the second assembly; Figure 23C illustrates a third portion of an embodiment of the method of joining the first assembly to the second assembly; Figure 23D illustrates the first assembly The first embodiment of the method of joining to the second assembly Figure 24A illustrates a first portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 24B illustrates a second portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 24C illustrates a third portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 25A illustrates a first portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 25B illustrates A second portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 25C illustrates a third portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 26A illustrates A first portion of an embodiment of a method of joining an assembly to a second assembly; Figure 26B illustrates a second portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 26C illustrates a first assembly A third portion of an embodiment of a method of joining to a second assembly; Figure 27A illustrates a first portion of an embodiment of a method of joining a first assembly to a second assembly; Figure 27B illustrates joining the first assembly to a first The second part of the embodiment of the method of the second assembly; Figure 27C illustrates the first The third portion of the embodiment of the method of joining the assembly to the second assembly; Figure 28 illustrates a flow diagram of an embodiment of a method for forming a joint structure on a substrate; Figure 29 illustrates the formation of a joint structure on a substrate Flowchart of an embodiment of another method; Figure 30 illustrates a flow diagram of an embodiment of a method for joining a first assembly to a second assembly; Figure 31 illustrates a method for joining a first assembly to a second total A flowchart of another embodiment of the method; FIG. 32 illustrates an embodiment comprising a two-part joint structure and a joint structure produced by joining two portions; FIG. 33A illustrates a joint structure including two portions and by joint Another embodiment of the two-part construction of the joined structure; Figure 33B illustrates an embodiment of the configuration of the two portions of Figure 33A; Figure 33C illustrates another embodiment of the configuration of the two portions of Figure 33A; Figure 34A Another embodiment in which the two-part joint structure and the joint structure produced by joining the two portions are illustrated; Figure 34B illustrates another embodiment of the configuration of the two portions of Figure 34A; Figure 34C illustrates the two of Figure 34A Partial configuration An embodiment; Figure 35A illustrates another embodiment of a joined structure comprising two portions and a joined structure resulting from joining the two portions; Figure 35B illustrates an embodiment of the configuration of the two portions of Figure 35A; Figure 35C illustrates Another embodiment of the configuration of the two portions of Figure 35A; Figure 36A illustrates an embodiment of a plurality of bonding structures and metal films prior to bonding; Figure 36B illustrates the bonding structure of Figure 36A after bonding to a metal film; Figure 37A Figure 37B is a cross-sectional view of the package of Figure 37A; Figure 38 illustrates an engagement structure comprising two portions and another joined structure formed by joining the two portions 1 is a plan view of another embodiment of a joint structure; FIG. 40 illustrates an embodiment of an electronic module; and FIG. 41 illustrates an embodiment of a wireless device.

300'‧‧‧封裝件 300'‧‧‧Package

302‧‧‧基底基板 302‧‧‧Base substrate

304‧‧‧頂蓋基板 304‧‧‧Top cover substrate

306A、306B、306C‧‧‧矩形暫態液相(TLP)接合元件 306A, 306B, 306C‧‧‧ Rectangular Transient Liquid Phase (TLP) Joint Components

306D‧‧‧暫態液相(TLP)支柱 306D‧‧‧Transient Liquid Phase (TLP) Pillar

308‧‧‧暫態液相(TLP)材料結構 308‧‧‧Transient liquid phase (TLP) material structure

310‧‧‧區域或凹穴 310‧‧‧area or pocket

312‧‧‧裝置 312‧‧‧ device

Claims (23)

一種接合元件，其包含： 一第一暫態液相結構，其包括一第一材料及一第二材料，該第一材料相較於該第二材料具有一較高熔點，該第一材料及該第二材料在該第一暫態液相結構中之一數量的一比率具有一第一值；及 一第二暫態液相結構，其包括該第一材料及該第二材料，該第一材料及該第二材料在該第二暫態液相結構中之一數量的一比率具有不同於該第一值的一第二值。An engaging element comprising: a first transient liquid phase structure comprising a first material and a second material, the first material having a higher melting point than the second material, the first material and The second material has a first value in a ratio of one of the first transient liquid phase structures; and a second transient liquid phase structure including the first material and the second material, the first A ratio of a quantity of the material and the second material in the second transient liquid phase structure has a second value different from the first value. 如請求項1之接合元件，其進一步包含包括該第一材料及該第二材料之一第三暫態液相結構，該第一材料及該第二材料在該第三暫態液相結構中之一數量的一比率具有一第三值，該第三值係在該第一值與該第二值之間。The bonding element of claim 1, further comprising a third transient liquid phase structure comprising the first material and the second material, the first material and the second material being in the third transient liquid phase structure A ratio of one of the numbers has a third value between the first value and the second value. 如請求項1之接合元件，其中該第一值、該第二值及該第三值中之一者經選擇，使得該第一暫態液相結構、該第二暫態液相結構及該第三暫態液相結構中之一者回應於加熱至高於該第二材料之該熔點而形成一金屬間合金，該金屬間合金具有高於該第二材料之一熔點的一熔點。The bonding element of claim 1, wherein one of the first value, the second value, and the third value is selected such that the first transient liquid phase structure, the second transient liquid phase structure, and the One of the third transient liquid phase structures forms an intermetallic alloy in response to heating to a temperature above the melting point of the second material, the intermetallic alloy having a melting point above a melting point of the second material. 如請求項1之接合元件，其中該第一暫態液相結構安置於一基板上且圍繞安置於該基板上之一裝置。The bonding element of claim 1, wherein the first transient liquid phase structure is disposed on a substrate and surrounds one of the devices disposed on the substrate. 如請求項4之接合元件，其中該第二暫態液相結構圍繞該第一暫態液相結構。The joining element of claim 4, wherein the second transient liquid phase structure surrounds the first transient liquid phase structure. 如請求項5之接合元件，其進一步包含連接該第一暫態液相結構與該第二暫態液相結構之至少一個暫態液相支柱。The joining element of claim 5, further comprising at least one transient liquid phase strut connecting the first transient liquid phase structure and the second transient liquid phase structure. 如請求項5之接合元件，其中該第一暫態液相結構及該第二暫態液相結構中之一者經組態以將自該第一暫態液相結構及該第二暫態液相結構中之該一者外逸之經熔融液體導引遠離該裝置。The bonding element of claim 5, wherein one of the first transient liquid phase structure and the second transient liquid phase structure is configured to be from the first transient liquid phase structure and the second transient state The one of the liquid phase structures that escapes is directed away from the device by the molten liquid. 如請求項5之接合元件，其中該第一暫態液相結構及該第二暫態液相結構中之一者經組態以將自該第一暫態液相結構及該第二暫態液相結構中之該一者外逸之經熔融液體導引朝向該第一暫態液相結構及該第二暫態液相結構中之另一者。The bonding element of claim 5, wherein one of the first transient liquid phase structure and the second transient liquid phase structure is configured to be from the first transient liquid phase structure and the second transient state The one of the liquid phase structures that escapes the molten liquid is directed toward the other of the first transient liquid phase structure and the second transient liquid phase structure. 一種接合元件，其包含： 包括一第一材料與一第二材料之一第一合金的一第一經接合結構，該第一材料相較於該第二材料具有一較高熔點，該第一材料及該第二材料在該第一經接合結構中之一數量的一比率具有一第一值；及 包括該第一材料與該第二材料之一第二合金的一第二經接合結構，該第一材料及該第二材料在該第二經接合結構中之一數量的一比率具有不同於該第一值的一第二值。An engagement element comprising: a first joined structure comprising a first material and a first alloy of a second material, the first material having a higher melting point than the second material, the first And a ratio of a quantity of the material and the second material in the first joined structure has a first value; and a second joined structure including the first material and the second alloy of the second material, A ratio of the first material and the second material in the second joined structure has a second value different from the first value. 如請求項9之接合元件，其中該第一合金及該第二合金中之一者為該第一材料及該第二材料之一化學計量金屬間合金。The joining element of claim 9, wherein one of the first alloy and the second alloy is a stoichiometric intermetallic alloy of the first material and the second material. 如請求項10之接合元件，其中該第一經接合結構及該第二經接合結構中之一者包括相較於該化學計量金屬間合金更富該第二材料的一區。The joining element of claim 10, wherein one of the first joined structure and the second joined structure comprises a region richer of the second material than the stoichiometric intermetallic alloy. 如請求項9之接合元件，其將一裝置氣密地密封於一凹穴內。The joining element of claim 9 which hermetically seals a device in a pocket. 如請求項12之接合元件，其中該裝置為一射頻(RF)裝置。The bonding element of claim 12, wherein the device is a radio frequency (RF) device. 如請求項12之接合元件，其包括於一射頻(RF)裝置模組中。The bonding component of claim 12, which is included in a radio frequency (RF) device module. 如請求項12之接合元件，其包括於一射頻(RF)裝置中。The bonding element of claim 12, which is included in a radio frequency (RF) device. 如請求項9之接合元件，其安置於一裝置之一接觸墊上且提供自一外部電路至該接觸墊之一電連接。The bonding element of claim 9 disposed on a contact pad of a device and provided for electrical connection from an external circuit to one of the contact pads. 一種包括用如請求項9之接合元件接合至一基板之至少一種組件的電子裝置。An electronic device comprising at least one component bonded to a substrate with an engaging element as claimed in claim 9. 如請求項17之電子裝置，其包括經由如請求項9之該接合元件而與該基板之一電觸點電連通的至少一個電觸點。The electronic device of claim 17, comprising at least one electrical contact in electrical communication with an electrical contact of the substrate via the bonding element as claimed in claim 9. 一種形成包括一裝置及一基板之一無線模組的方法，該方法包含： 在該裝置及該基板中之一者之一表面上形成一第一接合元件，該第一接合元件包括一第一材料及一第二材料之一第一合金，該第一材料相較於該第二材料具有一較高熔點，該第一材料及該第二材料在該第一接合元件中之一數量的一比率具有一第一值； 在該裝置與該基板中之一者之一表面上形成一第二接合元件，該第二接合元件包括該第一材料及該第二材料之一第二合金，該第一材料及該第二材料在該第二接合元件中之一數量的一比率具有不同於該第一值的一第二值； 用安置於該裝置與該基板之間且與該裝置及該基板兩者接觸的該第一接合元件及該第二接合元件使該裝置與該基板接觸；及 用足以使該第一接合元件及該第二接合元件中之該第一材料及該第二材料相互擴散並形成一第一經接合元件及一第二經接合元件的一溫度及時間加熱該第一接合元件及該第二接合元件。A method of forming a wireless module including a device and a substrate, the method comprising: forming a first bonding component on a surface of one of the device and the substrate, the first bonding component including a first a first alloy of a material and a second material, the first material having a higher melting point than the second material, and the first material and the second material are one of the first joining elements The ratio has a first value; forming a second bonding element on a surface of one of the device and the substrate, the second bonding element comprising the first material and a second alloy of the second material, a ratio of the first material and the second material in the second engagement element has a second value different from the first value; disposed between the device and the substrate and the device and the The first bonding element and the second bonding component contacting the substrate to contact the device with the substrate; and the first material and the second material in the first bonding component and the second bonding component Mutual diffusion and form a first The first engaging element and the second engaging element are heated by a temperature and time of the joining element and a second joined element. 如請求項19之方法，其中該裝置為一功率放大器、一低雜訊放大器及一天線開關模組中之一者。The method of claim 19, wherein the device is one of a power amplifier, a low noise amplifier, and an antenna switch module. 如請求項19之方法，其中該第一材料及該第二材料在該第一經接合元件中之該數量的該比率藉由該第一經接合元件與一第三經接合元件之間的一距離來判定。The method of claim 19, wherein the ratio of the first material and the second material in the first joined component is by a ratio between the first bonded component and a third bonded component Distance to judge. 一種形成至少一個接合結構之方法，該方法包含： 在該基板之一第一部分上形成一第一接合元件，該第一接合元件包括一第一材料及一第二材料，一量之該第一材料及一量之該第二材料以一第一比率存在於該第一接合元件中； 在該基板之一第二部分上形成至少一個第二接合元件，該至少一個第二接合元件包括該第一材料及該第二材料，該量之該第一材料及該量之該第二材料以不同於該第一比率之一第二比率存在於該至少一個第二接合元件中；及 加熱該第一接合元件及該至少一個第二接合元件以形成該至少一個接合結構，該至少一個接合結構主要由該第一材料及該第二材料之一大體上化學計量合金組成。A method of forming at least one bonding structure, the method comprising: forming a first bonding component on a first portion of the substrate, the first bonding component comprising a first material and a second material, the first amount a material and a second amount of the second material are present in the first joining element at a first ratio; at least one second joining element is formed on a second portion of the substrate, the at least one second joining element comprising the first a material and the second material, the first material of the amount and the second material of the amount being present in the at least one second joining element at a second ratio different from the first ratio; and heating the first An engagement element and the at least one second engagement element to form the at least one engagement structure, the at least one engagement structure consisting essentially of a substantially stoichiometric alloy of the first material and the second material. 如請求項22之方法，其中形成該第一接合元件包括形成具有一突起之該第一接合元件，該突起為該第一材料及該第二材料中之一者，該第一材料及該第二材料中之該一者相較於該第一材料及該第二材料中之另一者具有一較高熔融溫度，該突起經組態以將熔融材料自該第一接合元件朝向該第二接合元件導引。The method of claim 22, wherein forming the first bonding element comprises forming the first bonding element having a protrusion, the protrusion being one of the first material and the second material, the first material and the first The one of the two materials has a higher melting temperature than the other of the first material and the second material, the protrusion being configured to direct the molten material from the first engaging element toward the second Engagement element guidance.
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