TW201730688A - Substrate tuning system and method using optical projection - Google Patents

Abstract

Techniques herein include systems and methods that provide a spatially-controlled or pixel-based projection of light onto a substrate to tune various substrate properties. A given pixel-based image projected on to a substrate surface can be based on a substrate signature. The substrate signature can spatially represent non-uniformities across the surface of the substrate. Such non-uniformities can include energy, heat, critical dimensions, photolithographic exposure dosages, etc. Such pixel-based light projection can be used to tune various properties of substrates, including tuning of critical dimensions, heating uniformity, evaporative cooling, and generation of photo-sensitive agents. Combining such pixel-based light projection with photolithographic patterning processes and/or heating processes improves processing uniformity and decreases defectivity.

Description

Substrate adjustment system and method using optical projection

[Reciprocal Reference to Related Applications] This application claims priority to U.S. Patent Application Serial No. 14/974,974, filed on Dec. The entire disclosure of this application is incorporated herein by reference.

The disclosure generally relates to the patterning of substrates, including semiconductor substrates, such as germanium wafers. The present disclosure also relates to a process involving photolithography as part of the processing of semiconductor components, the photolithography comprising coating a film on a substrate and developing the film. The present disclosure relates, in particular, to controlling the size and accuracy of the patterned features as part of the photolithography and patterning process.

Photolithography involves coating a substrate with a film that is sensitive to electromagnetic (EM) radiation, exposing the film to a pattern of actinic radiation to define a latent pattern within the film, and then developing (dissolving and shifting) some of the film. Divide) to reveal a solid or undulating pattern on the substrate. Processing tools for coating and developing substrates typically include a number of modules that can be used to add films, add resists, and develop substrates.

The techniques in this specification include systems and methods that provide spatially controlled projection of light or electromagnetic (EM) radiation onto a substrate. Light, ultraviolet (UV, Ultra Violet) light, infrared light, or any wavelength of light directed at a target wavelength of 400-700 nm can be processed by heating or providing actinic radiation.

The present disclosure proposes techniques for spatially changing the critical dimensions (CDs) and/or temperature of substrates, and can be applied to vacuum and non-vacuum processing systems in semiconductors, flat panel displays, and photovoltaic systems, including deposition systems, etching. System (wet and dry). For example, pixel-based projected light patterns can correct for critical dimensions, lithographic exposure non-uniformities, stepper exposure delay times, and the like.

Of course, the order of discussion of the various steps as described in this specification is presented for clarity and clarity. In general, the steps can be performed in any suitable order. In addition, although various features, techniques, structural configurations, and the like in the specification may be discussed in various places in the disclosure, it is intended that the concepts can be performed independently or in combination with each other. Thus, the invention can be implemented or considered in many different ways.

It should be noted that the present disclosure does not specifically describe the various embodiments and/or incremental novel aspects of the present disclosure or the claimed invention. Instead, the present disclosure provides only a preliminary discussion of various embodiments and corresponding points that are superior to the novelty of the prior art. The reader will be directed to the embodiments of the disclosure and the corresponding figures, as further discussed below.

The techniques in this specification include systems and methods that provide for spatially or pixel-based projection onto a substrate to adjust various substrate characteristics. Such pixel-based light projection can be used to adjust various substrate characteristics, including critical dimensions (CDs), heating uniformity, evaporative cooling, photolithographic flash, grating retardation, and photosensitizer generation. Such pixel-based light projection can achieve significant improvements in critical dimensional uniformity across the substrate surface. Combining such pixel-based light projection with a photolithographic patterning process can improve processing uniformity and reduce defect rates.

In an embodiment, a digital light processing (DLP) chip, a GLV (glowing light valve), a laser galvanometer, or other grid micro-projection technology, combined with a light source, can make an image Focus (optional use of the lens) onto the substrate and correct or adjust critical dimensions, temperature and other non-uniformities. The system can be configured to vary the radiant output of the projected image. For example, using a solid white image projected onto the panel by a visible spectrum bulb will heat the panel to a particular maximum temperature for that particular bulb. The temperature of each projected pixel can be adjusted by using all or some of the wavelengths of light produced by the light source or not using the wavelength of the light. Such a technique provides extremely precise control of the specific baking process of the semiconductor, sufficient to bake the semiconductor to within 1 nm. Likewise, the amount of actinic radiation at each projected pixel location on the substrate working surface can be adjusted to be between the non-projecting radiation (of a particular source) and the total projection radiation, with many levels of variation between the two. A DLP wafer or laser galvanometer can, for example, project an image onto a substrate and change the amount of thermal energy or CD adjustment (by photoactivator generation) at any particular point or point on the substrate.

As with the projected image disclosed in this specification, the output to individual features on the substrate may vary depending on the number of pixels or pixel projection size supported by the selected projection system and the incident area. That is, the CD control that can be obtained using micro-mirror projection can be as flexible or fine-tuned as its maximum projection resolution. It should be noted that the system in this specification can be configured to project a particular image onto a substrate, such as a simultaneous projection of all indicated pixel locations, or as a raster scan projection (where a particular image is projected onto the substrate in a line-by-line manner) . In one embodiment, the pixel-based light projection system is coupled to a control computer of a bake unit, an exposure chamber, a dispensing chamber, a heater plate, an etch chamber, and the like. A pixel-based light projection system can be selectively focused through the lens system into the exposure chamber where the substrate is aligned. Light projected onto or at the substrate then adjusts the desired area of the substrate, for example by creating more photoacid. There are several uses for such methods and systems. An application is used to maintain temperature uniformity. Another application is to reduce or increase critical dimensions on the wafer being processed as part of semiconductor production.

Figure 1 depicts a schematic diagram of an exemplary substrate adjustment system. The processing chamber 108 can be sized to receive a substrate, such as a germanium wafer, a flat panel, or the like. The processing chamber 108 can be of a relatively small size (based on the size of the substrate), such as where a module is mounted within a larger tool. The substrate alignment system 107 can be used to align the image onto an operable area on the substrate that can be aligned within 0.1 nanometers. The substrate 105 can be placed on a substrate holder. The substrate 105 can be a conventional reflective or non-reflective cymbal disk having any type of coating.

The system includes a light source 102 that can be located within the processing chamber 108, adjacent to the processing chamber 108, or remote from the processing chamber 108. Light source 102 can be any of a number of light sources, such as a visible light source, an infrared light source, a UV light source, a laser, or a light bulb that produces other wavelengths of light. The source characteristics can be tailored (or selected) for a particular substrate being processed and for particular adjustment applications. For some substrates, a 60 watt (or equivalent) source can be sufficient, with a wavelength range of 400-700 nm, and a DLP resolution of 1080p (vertical resolution of 1080 horizontal lines and sequential scanning). Other applications may require higher power and higher resolution. The light source can be selected based on the particular wavelength desired. For example, an ultraviolet light source can be selected for some applications, and a white or infrared light source can be selected for other applications. The choice of source can be based on the absorption characteristics of a particular substrate and/or film. Any resolution supported by DLP, GLV, laser galvanometer, or other light projection techniques can be used.

The light projection element 103 can be implemented as a laser galvanometer, a DLP wafer, a grating light valve (GLV), or other light projection technique. DLP wafers and GLV systems are conventionally available. Digital laser galvanometers are also known. Lens system 104 is optionally used to assist in the generation of images that, when projected onto substrate 105, have dimensions equal to the dimensions of substrate 105 and have minimal aberrations. Projection line 106 represents an image field or video projected onto substrate 105 using simultaneous projection or raster based projection. The video or image can be designed based on the expected CD value and/or based on dynamic feedback from metering elements configured to identify CD differences across the substrate. Component 101 displays an exemplary location on substrate 105 that has a different critical dimension than the rest of the substrate. The projected image 109 projects light in the shape of one of the components 101. If the component 101 has exactly a larger CD than the remaining surface area of the substrate 105, the projected image 109 can increase the actinic radiation projected on such regions such that a uniform CD value mark extends throughout the entire surface of the substrate 105. For example, by increasing the production of photoactivators to assist in the removal of excess material.

The system in this specification thus incorporates a coarse control system for micro-control of critical dimensions. Each position of the projected pixel can be turned on or off and thus becomes an area that can be fine-tuned for thermal energy, temperature, CD correction, and photoreactivity.

Figure 5 is a diagram showing a simplified example CD mark for a particular substrate. This can be a CD mark across the cross section of the substrate. In this example CD mark, there are 19 point positions for measuring the relative difference in CD. The top of the figure represents a relatively large CD change or CD value, and the bottom of the figure also indicates the relative difference in CD, but when the top of the figure indicates an oversized CD, the bottom of the figure may indicate a too small CD. It should be noted that there is a CD change across the substrate, and this CD change with the planar position is an embodiment of the CD mark.

Figure 6 is a diagram showing a projected image used to correct the CD change of the CD mark presented in Figure 5. In other words, the projected image compensates for the changed CD mark. For example, it should be noted that points 1, 9, 10, 17, and 18 of the CD mark in Fig. 5 have relatively small CDs. It can be noted that the projected image in Figure 6 does not have light projected to these locations, which results in no increase in photoreactive agent. The dot positions 2 and 12 of the CD mark in Fig. 5 have relatively large CDs, and thus in the image projection in Fig. 6, these dot positions are displayed in white, representing full exposure/full exposure radiation, to cause The largest possible photoreactive agent under a particular light source. Other point locations are depicted in different shades of gray, with moderate variations representing CD values being similarly corrected with variable light projection. Figure 7 shows a modified or corrected CD mark which is the result of applying the projected image of Figure 6 to the CD mark of Figure 5. It should be noted that most of the CD values have been modified compared to the CD mark in Fig. 5, and the CD variation is greatly reduced. It should also be noted that the corrected CD mark can be achieved after any intermediate steps of baking and/or developing to remove material from a CD of greater desired value.

The substrate mark depicted in Figure 5 is a simplified linear mark. The substrate is generally planar, and thus the uniformity variation can vary based on the plane or X, Y position on the substrate. 3 is a diagram depicting an example key dimension token. This critical dimension mark maps to the point locations on the surface of a particular substrate, such as a wafer used in a micromachining process. It should be noted that various points on the CD mark diagram have a change in the degree of shading. These relative differences at the points on the CD mark represent the relative differences in CD uniformity. For example, a completely dark point location may represent an area with an oversized CD, while a fully bright or lighter point location may represent an area with an excessively large CD. This CD mark can be generated based on the observed and/or measured dimensions.

The substrate indicia illustrated in Figure 3 may also represent a look that a particular light projection may look on the substrate being processed. It should be noted that the particular source may be UV or infrared, and thus Figure 3 may represent the appearance of the projected energy signature, or the appearance of the cumulative effect of the energy signature. The change in the darkness of the hatch pattern may represent the intensity, amplitude, and/or frequency of the light. Thus, the position of the point on the surface of the substrate that receives the full brightness of the projected light can include bright or white areas in the figure. Likewise, a dot location with fewer blanks may have light of a medium or partial brightness projected at the locations. The dot locations shown as black blocks in this figure may not receive light or receive a relatively small amount of exposure. It should be noted that the substrate indicia may vary in visual performance based on the type of non-uniformity or indicia. For example, a CD mark can appear to have a number of perceptible lines corresponding to a scribe lane, a mark. A substrate mark showing raster delay non-uniformity can show evidence that a particular stepper/scanner travels across the surface of the substrate. The substrate mark for CD non-uniformity may have a circular pattern or may show a difference at the CD area interface.

4 is similar to FIG. 1, and FIG. 4 illustrates an exemplary embodiment of an optical projection adjustment system for conditioning substrate 105. The substrate 105 can comprise the following: a film 115, which can be a photoresist film, and a lower layer 110, which can be a hard mask or other patterned layer or memory layer for pattern transfer. The light projection element 103, or the accompanying controller, can receive a pixel based image for projection onto the substrate 105. The projection of this pixel-based image is displayed as a projected image 109. It should be noted that portions of the substrate 105 are illuminated while others are not illuminated. Use pixel-based image projection instead of mask-based light projection for photolithographic exposure. During projection, the projected image may change or change, such as in response to instant feedback or other adjustment goals.

The particular image or video being projected may be based on one or more sensors that may collect data prior to processing (static adjustment) or during processing for dynamic adjustment. In the feedback loop, a particular sensor or sensor array can collect data (eg, CD marks) and then transfer the collected data to the controller. Based on the collected data and/or based on whether thermal or optical correction (CD correction) is required, the controller can then calculate an image for projection onto the substrate. A proportional integral derivative controller (PID controller) can be used to implement CD token feedback. The projected image can be changed based on any variation on the entire substrate, such as a center to edge variation.

It should be noted that the intensity or amplitude of the light can be adjusted based on the type of material on the surface of the substrate. For example, some polymers may have low reflectivity, while other materials (such as tantalum and metals) may have maximum reflectance values. In a particular example material, namely copper, its reflectivity can range from 45% to 99%, although the copper surface will heat up when light is incident on the copper. Therefore, the technology in this specification can be applied to most substrate materials.

2 is a side view of an example system for improved substrate processing. The substrate 105 is located on the substrate holder 130, and the substrate holder 130 can be implemented as or include a thermal chuck. Above the substrate (toward the side of the substrate being processed), a laser galvanometer, DLP projector, or the like can be placed to project an image onto the surface of the substrate as part of the light projection element 103. The position of the projector can vary based on the space availability within a particular chamber. For example, the heating modules of many micromachining tools are quite short. In such embodiments, various openings 135 and/or lens systems can be used to project an image in any limited vertical space above the substrate. The example height and width measurements are shown, but such example height and width measurements are non-limiting and are merely illustrative of specific embodiments.

A special light projection system can be produced for such substrate adjustment or heating modules. Alternatively, a conventional laser galvanometer and a DLP projector can be used.

Other embodiments may use bulbs of different wavelengths to project light onto a single substrate. These bulbs can all contribute to light projection or can be selectively activated. Likewise, a configuration of multiple projectors per module processing module can be used. In other embodiments, the light projection may have a frequency based output for finer adjustments, such as using 3D graphics. In addition to the image-based light projector, the camera 105 or other metering elements can be placed in consideration of the substrate 105 to dynamically adjust the projected image based on the CD mark in real time by identifying a particular CD mark. In another embodiment, a sensor array can be mounted and connected to the feedback loop of the PID controller.

Projecting a CD-based image onto a substrate on a substrate holder is only one embodiment of the systems and methods in this specification. There are many other applications and embodiments for processing substrates at various stages of semiconductor processing. Therefore, the application is not limited to lithography. In another embodiment, a projected light-thermal technique can be used during substrate coating (eg, coating photoresist). Projecting an image onto a rotating substrate during liquid coating can help mitigate the effects of evaporative cooling. The benefit is that a lower dispense amount is required while at the same time providing better coating uniformity. If a non-transmissive object in the spin-coating chamber obstructs light projection, the light can be projected onto at least a section of the substrate, which will be substantially a frequency-based projection due to the rotation of the substrate (this is for only one of the diameters) Embodiments in which the segments can be illuminated at a particular point in time).

In other embodiments, optical image projection can be used for both post application bake (PAB) and post exposure bake (PEB). Light image projection can be used for EBR (edge bead removal) removal - an area that can be "delimited" or projected for edge ball removal. Light image projection can be used to define a region for directed self-assembly of a block copolymer as a means of printing an array. That is, the exposure can be sufficiently enhanced in the array where the self-assembly of the directed self-assembly (DSA) can be printed, while the remaining areas are not exposed, so that the block copolymer can be used without the use of a cutting mask. Self-assembly, which saves one process step in some micromachining processes.

Embodiments in this specification can be used with wet or dry substrate cleaning systems. With a wet cleaning system, the projected light image can contribute to center-to-edge temperature uniformity. In some processes in which the liquid is dispensed onto the rotating substrate, the film thickness increases toward the center of the substrate compared to the edges. However, the techniques in this specification can help to equalize radial temperature uniformity. Depending on the position of the dispensing nozzle and the dispensing arm, the image projected into the dispensing chamber may be substantially a partial image (eg, a pie-shaped image). Nonetheless, projection onto only a portion of the substrate can be effective, particularly when rotating a substrate, as all surfaces can be illuminated or projected through the image. Projecting images using UV light can further contribute to the reactivity of the chemical to improve the radial reactivity of such chemicals, as a spatial light enhancement technique that can be combined with, for example, a UV lamp that provides most of the illumination directly. It should be noted that for UV light enhancement and projection, optics should be selected to achieve UV transmission, such as quartz, calcium fluoride, or other permeable conductive media. For example, in many embodiments of temperature enhancement and actinic radiation enhancement, the amount of enhancement is typically less than 15% of the primary thermal or actinic radiation treatment. For example, a particular substrate having a photoresist film is exposed to a mask-based pattern using a scanner or stepper tool. Under such photolithographic exposure, the photod dose at each grain location is substantially the same. Embodiments in this specification can then be used to enhance a relatively small amount and varying amounts of exposure dose depending on the point location of the substrate.

It should be understood that there are many and various embodiments of the systems and methods disclosed herein.

An embodiment includes a system or apparatus for processing a substrate. The system includes a chamber that is sized and configurable to receive a substrate for processing. The substrate holder is disposed within the chamber and configured to hold the substrate. The system includes an image projection system configured to project an image onto an upper surface (ie, a working surface or a treated surface) of the substrate when the substrate is in the chamber. Image projection systems use micromirror projection elements to project images. The micromirror projection element can comprise, for example, a controllable mirror for reflecting the laser beam, or an array of microscopic mirrors corresponding to pixels in the image to be projected. The system includes a controller configured to control the image projection system and cause the image projection system to project the pixel-based image onto the work surface of the substrate. The image projection system includes a light source and a pixel based projection system can be used. The pixels of each projection can be varied by a parameter selected from the group consisting of light wavelength, light intensity, light frequency, and light amplitude. The image projection system can be configured to project an image based on predetermined substrate indicia, which can be a pixel-based representation of different surface characteristics (heat, exposure dose, critical dimension changes). The light source can be configured to provide actinic radiation to a particular substrate. The light source can be configured to provide radiation having a wavelength of less than 400 nanometers, such as ultraviolet radiation. A particular source of light having a particular spectral line or complex spectral line can be selected based on a particular radiation sensitive film on the substrate. The projection based on the predetermined substrate mark may include substrate marks that spatially map different characteristics of the substrate surface.

In other embodiments, the particular projected image may be based on both the substrate mark and the CD etch mark of the particular/special etch chamber. The CD etch marks of a particular etch chamber represent or identify various etch non-uniformities caused by a particular etch pattern transfer process. For example, in the case of a plasma dry etch chamber, depending on the particular type of plasma reactor, there is typically etch non-uniformity across the surface of the substrate. For example, the plasma can have a density change from center to edge and/or a change in density of the azimuthal angle. Therefore, in some areas of the substrate, more or less etching may occur than in other areas. As a result, the etched substrate with the transferred pattern will have CD non-uniformity (even if the etch mask has a uniform CD). The systems and methods in this specification can compensate for such etch non-uniformities. By projecting the projected image based on both the substrate mark (the incoming CD mark) and the data used to identify the particular etch chamber that would or have etched the substrate, the result is that the image is projected to produce a pre-shifted CD, It achieves CD standardization during subsequent etching procedures. As a non-limiting example, if a particular etching system etches more in the central portion of the substrate and less etching in the edge portion of the substrate, the projected image can be configured to adjust the incoming CD and offset the CD such that the central portion has a phase A CD that is larger (or smaller) than the edge. Then, when the substrate is etched, the fed CD has coped with the etching non-uniformity, so that the resulting etching produces a uniform CD across the substrate.

It should be noted that a substrate such as a semiconductor wafer is typically supported or mounted on its backside surface (where the backside surface faces the ground) while performing, for example, coating, baking, lithography, development on its opposite surface. , etching, etc. process. In this regard, the working surface is generally face up, and thus is the "upper surface", which is on the opposite side of the back side surface. The upper surface then refers to the surface opposite the back side surface, in other words, the working surface. In some processing processes, such as electroplating, the substrate can be held vertically. In such a vertical configuration, the work surface faces the sides, and thus the upper surface faces the sides, but nevertheless remains the upper surface.

The processing system can also include a CD metering system configured to identify pixel-based CD marks of the substrate. The image projection system may use a laser galvanometer, a digital light processing (DLP) component, or a grating light valve (GLV) component to project an image onto a work surface of the substrate. Any image projection element that adjusts the optical intensity depending on the position can be used. The system can include a dispensing system configured to dispense a liquid composition onto a substrate surface in the same processing chamber. The chamber can be disposed within a semiconductor processing tool, the tool including at least one module for dispensing liquid onto the rotating substrate, and including at least one module having a heating mechanism for heating the substrate. Such tools are often referred to as applicators/developers. In another embodiment, the chamber can be disposed within a semiconductor processing tool, the tool comprising: at least one module configured to distribute photoresist to the substrate; configured to dispense developing chemicals on the substrate At least one module thereon; at least one module for measuring the CD; and at least one module configured to bake the substrate, as illustrated in FIG. Other systems may be implemented as a scanner/stepper tool that includes a micromirror projection system or a pixel based projection system. Such an embodiment may be configured with a processing chamber that is a separate module from the lithographic exposure stack, or positioned to project an image onto the substrate surface during lithographic exposure.

In other embodiments, the image projection system is configured to project a particular image onto a work surface of the wafer in a line-by-line manner. In another embodiment, the image projection system is configured to project a particular image onto a work surface of the wafer by using one or more mirrors configured to move the laser beam across the work surface And varying the amount of laser radiation directed at each pixel location of the working surface of the substrate. For example, such an image projection system can include the use of a laser galvanometer. The image projection system can be configured to project a particular image onto a work surface of the substrate in less than, for example, 30 seconds. Alternatively, a particular image can be projected onto the work surface of the substrate multiple times per second. For example, a laser galvanometer has a raster scan or raster projection mechanism. Such a raster projection can include projecting a laser beam across the entire substrate surface in a line-by-line manner. The projection speed can range from about hundreds of times per second to every few seconds or more. When the laser galvanometer moves a particular laser beam or UV beam throughout the substrate, the intensity of the laser beam can be varied from 0% to 100% at each pixel location or resolution point on the working surface of the substrate. For example, an acousto-optic adjuster can be used to adjust the light intensity at each point location on a particular substrate surface. Alternatively, the dwell time of the projected radiation at a particular pixel location can also be varied to provide the desired light dose.

Another embodiment includes a method of processing a substrate. The method includes disposing a substrate on a substrate holder. Setting the substrate can include receiving the substrate in a module of the semiconductor processing tool. The semiconductor processing tool can include at least one module that distributes the photoresist to the substrate. Such a processing tool can include a substrate handling mechanism for automatically moving the substrate between different processing modules. The light is then projected onto the surface of the substrate via a grid-type light projection system configured to vary the amplitude of the projected light depending on the position. A typical photolithographic exposure is performed using a mask or a priming mask that blocks a portion of the light such that the light pattern reaches the surface of the substrate. In contrast, a grid-type light projection system projects light into an array or matrix of points where each projection point can be switched on or off and/or its frequency or amplitude can be varied. The projected light then varies in amplitude on the surface of the substrate depending on the position on the substrate, wherein the change is based on the substrate mark. Projecting light onto the surface of the substrate can include projecting the image onto the substrate by a laser galvanometer or a digital light processing (DLP) component. The particular projected image may be based on a predetermined mark of the characteristic of the corresponding substrate or features thereon. Such indicia may include key dimension indicia, thermal indicia, light reflecting indicia, surface energy, x-rays, microwaves, and the like. The resulting image may be based on a predetermined or instantaneously measured critical dimension (CD) mark corresponding to the substrate, or a predetermined lithographic exposure mark corresponding to the substrate, which may be the result of raster delay or flare. Such marks compensate for raster scan/exposure delay and extreme ultraviolet (EUV) flash flame.

It should be noted that a particular substrate mark can be identified from a previous substrate that has been processed by a particular tool, tool set, and/or process sequence. In other words, the substrate mark can be calculated on-the-fly for the substrate being processed, or the substrate mark can be calculated/observed for a repeat pattern of marks for a particular micro-machining process. Such repeated patterns may be due to artifacts of the particular tool and/or material used. The substrate characteristics may include optical properties, electrical properties, mechanical properties, structural height, film thickness, temperature, and the like.

In several embodiments, a laser galvanometer or digital light processing component is configured to project an image of independently addressable pixels onto a substrate surface. The digital light processing element can be configured to vary the light intensity of each independently addressable pixel.

Another embodiment includes a method of processing a substrate. The substrate is placed on a substrate holder within the processing chamber. A pixel-based image is projected onto the surface of the substrate by digitally controlling the micromirror projection element, wherein the pixel-based image is generated based on the substrate mark. The substrate can include a layer having a photoreactive agent such that the projected pixel-based image causes the photoreactive agent to chemistry the pixel-based image based on the amplitude and/or wavelength of the projected light at a particular point on the substrate. reaction. In other words, the pattern of projected light can help cause the photoreactive agent to produce an acid, base, or other solubility converting material. The substrate mark can correspond to a predetermined thermal mark of the temperature on the surface of the substrate. Projecting a pixel-based image may include varying the light intensity, duration, and wavelength for each projected pixel.

In another embodiment, a method of processing a substrate includes disposing a substrate on a substrate holder of a semiconductor processing tool. The substrate on the substrate holder is heated using a heating mechanism located within the substrate holder, and the pixel-based image is projected onto the substrate using a digitally controlled micromirror projection element to spatially adjust the surface temperature of the substrate. The pixel-based image varies the light amplitude according to the independently addressable pixels, and the projected pixel-based image is based on the thermal signature of the substrate.

Another embodiment includes a receiving substrate having a film for directed self-assembly of the block copolymer. The digital light projection is used to project the image system onto the substrate film such that the image is modified according to the spatial projection image. The block copolymer film is coated and activated or self-assembled to assemble the copolymer into a pattern based on spatial projection (pixel based) images.

Specific details have been set forth in the foregoing description, such as the particular geometry of the processing system, and the description of various components and processes used in this specification. It is to be understood, however, that the present invention may be practiced in other embodiments of the present invention, and such details are not intended to be limiting. The embodiments disclosed in the specification have been described with reference to the accompanying drawings. Also, specific quantities, materials, and configurations have been presented for the purpose of illustration. Nevertheless, the invention may be practiced without such specific details. Components having substantially the same functional structure are denoted by like reference numerals, and thus any redundant description may be omitted.

Various techniques have been described as a plurality of separate operations to aid in understanding various embodiments. The order of narration should not be taken to imply that these operations must be sequentially dependent. Rather, such operations are not necessarily required to be performed in the order presented. The recited operations may be performed in a different order than the described embodiments. In additional embodiments, various additional operations may be performed, and/or the operations recited may be omitted.

In accordance with the present invention, "substrate" or "target substrate" as used in this specification generally refers to an object to be processed. The substrate may comprise any material portion or structure of the component, particularly a semiconductor or other electronic component, and may, for example, be a base substrate structure, such as a semiconductor wafer, a priming mask, or a pedestal substrate structure or overlying the substrate. A layer of a substrate structure (such as a film). Thus, the substrate is not limited to any particular pedestal, underlying or overlying layer, patterned or unpatterned, but rather means that the substrate comprises any such layer or base substrate, and any layers and / or a combination of base substrates. This description may relate to a particular type of substrate, but for illustrative purposes only.

It will also be apparent to those skilled in the art that many variations can be made in the operation of the techniques described above while still achieving the same objectives as the present invention. Such variations are intended to be included within the scope of the disclosure. In this regard, the above description of the embodiments of the present invention is not intended to be limiting. In particular, any limitations of embodiments of the invention are set forth in the scope of the following claims.

101‧‧‧ Parts
102‧‧‧Light source
103‧‧‧Light projection elements
104‧‧‧Lens system
105‧‧‧Substrate
106‧‧‧Projection line
107‧‧‧Substrate alignment system
108‧‧‧Processing chamber
109‧‧‧Projected images
110‧‧‧Under
115‧‧‧ film
130‧‧‧Sheet holder
135‧‧‧ openings
143‧‧‧ camera

The various embodiments of the present invention, together with many of the advantages thereof, will be more readily understood by reference to the <RTIgt; These figures are not necessarily drawn to scale, but rather to emphasize their characteristics, principles, and concepts.

1 is a schematic perspective view of an exemplary image projection system for adjusting a substrate.

2 is a schematic side view of an exemplary image projection system for adjusting a substrate.

Figure 3 is a diagram of an exemplary substrate symbol that exhibits spatially varying characteristics.

4 is a schematic side view of an exemplary image projection system for adjusting a substrate.

Figure 5 is a diagram of a simplified simplification of critical dimensions or thermal marks across an example of a cross-section of a substrate.

Figure 6 is a diagram showing a projected image that compensates for a particular critical dimension symbol.

Figure 7 is a diagram of a simplified simplification of critical dimensions or thermal marks across an example of a cross-section of a substrate.

Figure 8 is a schematic illustration of a semiconductor processing tool.

103‧‧‧Light projection elements

105‧‧‧Substrate

109‧‧‧Projected images

110‧‧‧Under

115‧‧‧ film

Claims (17)

A processing system for processing a substrate, the processing system comprising: a chamber sized and configured to receive a substrate for processing; a substrate holder disposed within the chamber and configured to hold the substrate An image projection system configured to project an image onto a work surface of the substrate while the substrate is in the chamber, the image projection system projecting the image using a micromirror projection element configured to be based on Projecting the image with a predetermined substrate mark, the image projection system configured to project the image onto the work surface of the substrate in a line-by-line manner; and a controller configured to control the image projection system and to cause the image A projection system projects a pixel based image onto the work surface of the substrate. A processing system for processing a substrate according to claim 1, wherein the image projection system is configured to additionally project the image based on a CD etch mark of a particular etch chamber. A processing system for processing a substrate according to claim 2, wherein the image projection system is configured to project the image to produce an offset CD mark on the substrate for CD normalization during a subsequent etching process. A processing system for processing a substrate according to claim 1, wherein the image projection system is configured to project a specific image onto the work surface of the substrate by using one or more mirrors, the one or more The multi-mirror configuration is configured to move the laser beam throughout the work surface and vary the amount of laser radiation directed at each pixel location of the work surface of the substrate. A processing system for processing a substrate according to claim 4, wherein the image projection system comprises a laser galvanometer element. A processing system for processing a substrate according to claim 5, wherein the image projection system comprises a light source configured to provide actinic radiation to a particular substrate. A processing system for processing a substrate according to claim 6 wherein the light source is configured to provide radiation having a wavelength of less than 400 nm. The processing system for processing a substrate according to claim 1, wherein the image projection system uses a digital light processing (DLP) component or a grating light valve (GLV) or a laser galvanic current The component is projected to project the image onto the work surface of the substrate. A processing system for processing a substrate according to claim 1, wherein each of the projected pixels is changed by a parameter selected from the group consisting of intensity of light and amplitude of light. A processing system for processing a substrate according to claim 1, wherein the image projection system is configured to project a specific image onto the work surface of the substrate in less than 60 seconds. A processing system for processing a substrate according to claim 1, wherein the image projection system is configured to project a particular image onto the work surface of the substrate multiple times per second. A processing system for processing a substrate according to claim 1, wherein the intensity of each of the projected pixels is based on a critical dimension of the substrate. The processing system for processing a substrate according to claim 1, wherein the chamber is disposed in a semiconductor processing tool, the semiconductor processing tool comprising at least one module for dispensing liquid onto the rotating substrate, and comprising At least one module for heating the heating mechanism of the substrate. The processing system for processing a substrate according to claim 1, wherein the chamber is disposed in a semiconductor processing tool, the semiconductor processing tool comprising: at least one module configured to distribute the photoresist on the substrate; At least one module configured to dispense developing chemicals onto the substrate; and at least one module configured to bake the substrate. A processing system for processing a substrate, the processing system comprising: a chamber sized and configured to receive a substrate for processing; a substrate holder disposed within the chamber and configured to hold the substrate An image projection system configured to project an image onto a work surface of the substrate while the substrate is in the chamber, the image projection system projecting the image using a micromirror projection element configured to Projecting the image onto the work surface of the substrate by using one or more mirrors configured to move the laser beam throughout the work surface and to vary the orientation of the work surface directed to the substrate a laser radiation amount at a pixel location; and a controller configured to control the image projection system and cause the image projection system to project a pixel-based image onto the work surface of the substrate, wherein the pixel-based image is based on A substrate mark that spatially maps different characteristics of the working surface of the substrate. A processing system for processing a substrate according to claim 15 wherein the controller is configured to generate the pixel-based image based on a critical dimension of the substrate. A processing system for processing a substrate according to claim 15 wherein the image projection system is further configured to project the image based on a CD etch mark of a particular etch chamber.