TW201705323A - Mounting device and mounting method - Google Patents

Mounting device and mounting method Download PDF

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Publication number
TW201705323A
TW201705323A TW105106551A TW105106551A TW201705323A TW 201705323 A TW201705323 A TW 201705323A TW 105106551 A TW105106551 A TW 105106551A TW 105106551 A TW105106551 A TW 105106551A TW 201705323 A TW201705323 A TW 201705323A
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TW
Taiwan
Prior art keywords
circuit board
pressure bonding
wafer component
stage
temporary
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TW105106551A
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Chinese (zh)
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TWI681478B (en
Inventor
Noboru Asahi
Yoshinori Miyamoto
Yoshiyuki Arai
Shimpei Aoki
Masatsugu Nimura
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Toray Eng Co Ltd
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Publication of TW201705323A publication Critical patent/TW201705323A/en
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Publication of TWI681478B publication Critical patent/TWI681478B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Supply And Installment Of Electrical Components (AREA)

Abstract

The purpose of the present invention is to provide a mounting device and a mounting method capable of suppressing heat propagation from a heated chip part to the outside. Specifically, the present invention provides a mounting device 1 that heats a chip part D at a press-bonding temperature Tp and presses it by a press-bonding force Fp to bond it to a circuit board C placed at a prescribed position of an adsorption table 14b of this press-bonding stage 14. A heat-insulating member 15 that supports the circuit board C is provided at a portion of the adsorption table 14b that overlaps a bonding position of the chip part D on the circuit board C placed on the adsorption table 14b of this press-bonding stage 14.

Description

安裝裝置及安裝方法 Mounting device and mounting method

本發明係關於一種安裝裝置及安裝方法。詳細而言，係關於一種將晶片零件等安裝於電路基板上之安裝裝置及安裝方法。 The present invention relates to a mounting device and a mounting method. More specifically, it relates to a mounting device and a mounting method for mounting a wafer component or the like on a circuit board.

先前，為應對具有包含銅配線等導電體之電路之電路基板之圖案之高精度化、微細化，已知有包含暫時壓接步驟、及正式壓接步驟之半導體裝置之製造方法，該暫時壓接步驟係藉由接著劑而將包含半導體元件之晶片零件暫時固定於電路基板，該正式壓接步驟使被暫時固定之晶片零件連接於電路基板。例如如同專利文獻1。 Conventionally, in order to cope with the improvement in precision and miniaturization of a pattern of a circuit board having a circuit including a conductor such as a copper wiring, a method of manufacturing a semiconductor device including a temporary pressure bonding step and a final pressure bonding step is known. In the subsequent step, the wafer component including the semiconductor element is temporarily fixed to the circuit substrate by an adhesive, and the final crimping step connects the temporarily fixed wafer component to the circuit substrate. For example, it is like patent document 1.

專利文獻1中所記載之半導體裝置之製造方法(安裝方法)包含藉由加熱及加壓而將半導體晶片(晶片零件)暫時壓接於基板(電路基板)從而形成暫時壓接積層體之步驟、及對暫時壓接積層體進而進行加壓及加熱從而使焊料熔融並且使熱固性接著劑膜硬化之正式壓接步驟。於此種安裝方法中，電路基板與安裝裝置之載台接觸，因此於正式壓接時供給至晶片零件之熱會傳導至載台。因此，半導體裝置考慮到因熱傳導至載台而發生之溫度下降，需要加熱晶片零件。又，於被暫時壓接之晶片零件鄰接之情形時，存在如下可能，即為正式壓接而被加熱之晶片零件之熱傳導至鄰接之晶片零件，從而接著劑硬化。進而，於將多層地積層之晶片零件正式壓接之情形時，晶片零件存在如下情形，即因熱傳導至載台而使加熱工具側與載台側(電路基板側)之溫差變大，從而各晶片零件間之接著狀態變得不均勻。 The manufacturing method (mounting method) of the semiconductor device described in Patent Document 1 includes a step of temporarily pressing a semiconductor wafer (wafer component) onto a substrate (circuit substrate) by heating and pressurization to form a temporarily pressure-bonded laminated body, And a formal crimping step of temporarily pressing and laminating the laminated body, further pressurizing and heating to melt the solder and harden the thermosetting adhesive film. In this mounting method, the circuit board is in contact with the stage of the mounting device, so that heat supplied to the wafer component during the final crimping is conducted to the stage. Therefore, the semiconductor device needs to heat the wafer component in consideration of the temperature drop caused by heat conduction to the stage. Further, in the case where the wafer parts to be temporarily crimped are adjacent to each other, there is a possibility that the heat of the wafer parts heated for the final pressure bonding is conducted to the adjacent wafer parts, whereby the adhesive is hardened. Further, when the wafer component of the multilayered layer is actually pressure-bonded, the wafer component has a temperature difference between the heating tool side and the stage side (circuit board side) due to heat conduction to the stage. The subsequent state between the wafer parts becomes uneven.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2014-60241號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2014-60241

本發明之目的在於提供一種可抑制熱自被加熱之晶片零件向外部之傳導之安裝裝置及安裝方法。 SUMMARY OF THE INVENTION An object of the present invention is to provide a mounting apparatus and a mounting method capable of suppressing heat conduction from a heated wafer component to the outside.

本發明所欲解決之問題如上所述，其次對用以解決該問題之手段進行說明。 The problem to be solved by the present invention is as described above, and the means for solving the problem will be described next.

即，本發明係對晶片零件進行加熱及加壓而將其連接於配置於載台之特定位置之電路基板之安裝裝置，於與配置於載台之電路基板中之晶片零件之連接位置重合之載台之部分，設置有支持電路基板之絕熱構件。 That is, the present invention relates to a mounting device for heating and pressurizing a wafer component to a circuit board disposed at a specific position of the stage, and is superposed on a connection position of the wafer component in the circuit board disposed on the stage. A portion of the stage is provided with a heat insulating member that supports the circuit board.

於本發明中，上述絕熱構件以於上述載台之下述部分與電路基板之間構成空間之方式設置，該部分係不與上述電路基板中之上述晶片零件之連接位置重合。 In the present invention, the heat insulating member is provided so as to form a space between the lower portion of the stage and the circuit board, and the portion does not overlap with the connection position of the wafer component in the circuit board.

本發明係設置有冷卻機構，該冷卻機構係將不與上述電路基板中之上述晶片零件之連接位置重合之上述載台之部分與電路基板之間構成之空間冷卻。 The present invention is provided with a cooling mechanism that cools a space formed between a portion of the stage and a circuit board that does not overlap with a connection position of the wafer component in the circuit board.

本發明係於上述絕熱構件之與上述電路基板或上述載台接觸之面中之至少一面形成有凹凸者。 According to the invention, at least one of the surfaces of the heat insulating member that is in contact with the circuit board or the stage is formed with irregularities.

本發明構成為可介隔上述絕熱構件吸引上述電路基板。 The present invention is configured to attract the circuit board via the heat insulating member.

本發明係對晶片零件進行加熱及加壓而將其連接於配置於載台之特定位置之電路基板之安裝方法，且包含：暫時壓接步驟，其以配置於電路基板與晶片零件之間之接著劑成為特定之暫時壓接溫度之方 式進行加熱，並且以特定之暫時壓接負荷將晶片零件朝向電路基板加壓，而將晶片零件暫時壓接於電路基板；絕熱支持步驟，其藉由絕熱構件支持上述電路基板中暫時壓接有上述晶片零件之部分；及正式壓接步驟，其將接著劑及晶片零件加熱至特定之正式壓接溫度以上，並且以特定之正式壓接負荷將晶片零件朝向電路基板加壓。 The present invention relates to a method of mounting a circuit component by heating and pressurizing a wafer component to a specific position disposed on a stage, and includes: a temporary crimping step disposed between the circuit substrate and the wafer component The agent becomes the specific temporary crimping temperature Heating, and pressing the wafer component toward the circuit substrate with a specific temporary crimping load, and temporarily crimping the wafer component to the circuit substrate; an adiabatic support step of supporting the temporary crimping of the circuit substrate by the heat insulating member a portion of the wafer component; and a formal crimping step of heating the adhesive and the wafer component to a temperature above a specified final crimp temperature and pressurizing the wafer component toward the circuit substrate with a particular formal crimp load.

本發明包含積層步驟，該積層步驟係於上述暫時壓接步驟中，將晶片零件進而重疊於連接在上述電路基板之上述晶片零件並進行暫時壓接。 The present invention includes a lamination step in which the wafer component is further superposed on the wafer component connected to the circuit board and temporarily crimped.

於本發明中，上述接著材料為熱固性接著劑膜，於上述暫時壓接步驟中，進行加熱直至接著劑成為特定之黏度之暫時壓接溫度為止，於上述正式壓接步驟中，進行加熱直至為接著劑之硬化溫度以上之正式壓接溫度為止。 In the present invention, the bonding material is a thermosetting adhesive film, and in the temporary pressure bonding step, heating is performed until the adhesive becomes a temporary pressure bonding temperature of a specific viscosity, and in the final pressure bonding step, heating is performed until The final crimping temperature of the curing temperature of the agent is above.

作為本發明之效果，可發揮如下所示之效果。 As an effect of the present invention, the effects as described below can be exhibited.

於本發明中，不使電路基板接觸於載台而對暫時壓接於電路基板之晶片零件進行加壓及加熱。藉此，可抑制熱自被加熱之晶片零件向外部之傳導。 In the present invention, the wafer component temporarily pressed against the circuit board is pressurized and heated without contacting the circuit board with the stage. Thereby, conduction of heat from the heated wafer component to the outside can be suppressed.

於發明中，經由絕熱構件之熱之傳導減少，並且熱向空間散發。藉此，可抑制熱自被加熱之晶片零件向外部之傳導。 In the invention, the conduction of heat through the heat insulating member is reduced, and the heat is radiated to the space. Thereby, conduction of heat from the heated wafer component to the outside can be suppressed.

於本發明中，向所構成之空間散發之熱量增大。藉此，可抑制熱自被加熱之晶片零件向外部之傳導。 In the present invention, the amount of heat dissipated into the space formed is increased. Thereby, conduction of heat from the heated wafer component to the outside can be suppressed.

於本發明中，自電路基板向絕熱構件之導熱路徑減小。藉此，可抑制熱自被加熱之晶片零件向外部之傳導。 In the present invention, the heat conduction path from the circuit substrate to the heat insulating member is reduced. Thereby, conduction of heat from the heated wafer component to the outside can be suppressed.

於本發明中，僅藉由絕熱構件支持並保持電路基板。藉此，可抑制熱自被加熱之晶片零件向外部之傳導。 In the present invention, the circuit substrate is supported and held only by the heat insulating member. Thereby, conduction of heat from the heated wafer component to the outside can be suppressed.

1‧‧‧安裝裝置 1‧‧‧Installation device

2‧‧‧暫時壓接裝置 2‧‧‧Temperary crimping device

3‧‧‧暫時壓接用基台 3‧‧‧ Temporary crimping abutment

4‧‧‧暫時壓接用載台 4‧‧‧ Temporary crimping stage

4a‧‧‧驅動單元 4a‧‧‧Drive unit

4b‧‧‧吸附台 4b‧‧‧Adsorption station

5‧‧‧暫時壓接用支持框架 5‧‧‧ Temporary crimping support frame

6‧‧‧暫時壓接用單元 6‧‧‧ Temporary crimping unit

7‧‧‧暫時壓接用頭 7‧‧‧ Temporary crimping head

8‧‧‧暫時壓接用加熱器 8‧‧‧ Temporary crimping heater

9‧‧‧暫時壓接用附接件 9‧‧‧Temperature crimping attachments

10‧‧‧變位感測器 10‧‧‧Displacement sensor

11‧‧‧暫時壓接用圖像識別裝置 11‧‧‧Image recognition device for temporary crimping

12‧‧‧正式壓接裝置 12‧‧‧Formal crimping device

13‧‧‧正式壓接用基台 13‧‧‧Formal crimping abutment

14‧‧‧正式壓接用載台 14‧‧‧Formal crimping station

14a‧‧‧驅動單元 14a‧‧‧Drive unit

14b‧‧‧吸附台 14b‧‧‧Adsorption station

14c‧‧‧吸引通路 14c‧‧‧Attraction pathway

15‧‧‧絕熱構件 15‧‧‧Insulation components

15a‧‧‧凸面 15a‧‧ ‧ convex

16‧‧‧冷卻裝置 16‧‧‧Cooling device

17‧‧‧正式壓接用支持框架 17‧‧‧Formal Crimp Support Framework

18‧‧‧正式壓接用單元 18‧‧‧Formal crimping unit

19‧‧‧正式壓接用頭 19‧‧‧Formal crimping head

20‧‧‧正式壓接用加熱器 20‧‧‧Formal crimping heater

21‧‧‧正式壓接用附接件 21‧‧‧Official crimping attachments

21a‧‧‧橡膠構件 21a‧‧‧Rubber components

22‧‧‧正式壓接用圖像識別裝置 22‧‧‧Image recognition device for formal crimping

23‧‧‧搬送裝置 23‧‧‧Transporting device

24‧‧‧控制裝置 24‧‧‧Control device

C‧‧‧電路基板 C‧‧‧ circuit board

Ca‧‧‧焊墊 Ca‧‧‧ pads

D‧‧‧晶片零件 D‧‧‧ wafer parts

Da‧‧‧焊料 Da‧‧‧ solder

Db‧‧‧貫通電極 Db‧‧‧through electrode

D1‧‧‧第1晶片零件 D1‧‧‧1st wafer part

D2‧‧‧第2晶片零件 D2‧‧‧2nd wafer part

D3‧‧‧第3晶片零件 D3‧‧‧3rd wafer part

D(n)‧‧‧第n晶片零件 D(n)‧‧‧nth wafer part

Fp‧‧‧正式壓接負荷 Fp‧‧‧ formal crimping load

Ft‧‧‧暫時壓接負荷 Ft‧‧‧ temporary crimping load

L‧‧‧距離 L‧‧‧ distance

NCF‧‧‧非導電性膜 NCF‧‧‧ non-conductive film

S110‧‧‧步驟 S110‧‧‧Steps

S120‧‧‧步驟 S120‧‧‧ steps

S130‧‧‧步驟 S130‧‧‧Steps

S140‧‧‧步驟 S140‧‧‧Steps

S150‧‧‧步驟 S150‧‧ steps

S160‧‧‧步驟 S160‧‧‧ steps

S170‧‧‧步驟 S170‧‧‧Steps

S310‧‧‧步驟 S310‧‧‧Steps

S320‧‧‧步驟 S320‧‧‧Steps

S330‧‧‧步驟 S330‧‧‧Steps

S410‧‧‧步驟 S410‧‧‧Steps

S420‧‧‧步驟 S420‧‧‧ steps

S430‧‧‧步驟 S430‧‧‧Steps

S440‧‧‧步驟 S440‧‧‧Steps

Tp‧‧‧正式壓接溫度 Tp‧‧‧ formal crimping temperature

Tt‧‧‧暫時壓接溫度 Tt‧‧‧ temporary crimping temperature

X‧‧‧方向 X‧‧‧ direction

Y‧‧‧方向 Y‧‧‧ direction

Z‧‧‧方向 Z‧‧‧ direction

θ‧‧‧方向 Θ‧‧‧ direction

圖1係表示本發明之實施形態之安裝裝置之整體構成之概略圖。 Fig. 1 is a schematic view showing the overall configuration of a mounting device according to an embodiment of the present invention.

圖2(a)係表示本發明之一實施形態之安裝裝置之暫時壓接用頭之構成之概略圖，(b)係表示本發明之一實施形態之安裝裝置之正式壓接用頭之構成之概略圖。 Fig. 2 (a) is a schematic view showing a configuration of a temporary pressure bonding head of the mounting device according to the embodiment of the present invention, and Fig. 2 (b) is a view showing a configuration of a final pressure bonding head of the mounting device according to the embodiment of the present invention. Schematic diagram.

圖3(a)係本發明之一實施形態之安裝裝置之正式壓接用載台之放大部分剖視圖，(b)同樣係設置於正式壓接用載台之絕熱構件之放大立體圖。 Fig. 3 (a) is an enlarged partial cross-sectional view showing a final pressure-bonding stage of the mounting device according to the embodiment of the present invention, and (b) is an enlarged perspective view of the heat insulating member provided on the final pressure-bonding stage.

圖4(a)係於本發明之一實施形態之安裝裝置之正式壓接用載台上配置有電路基板之狀態之俯視圖，(b)同樣係表示正式壓接用載台之冷卻通路之俯視圖。 Fig. 4 (a) is a plan view showing a state in which a circuit board is placed on a final pressure bonding stage of a mounting device according to an embodiment of the present invention, and (b) is a plan view showing a cooling path of a final pressure bonding stage. .

圖5係表示本發明之一實施形態之安裝裝置之控制構成之方塊圖。 Fig. 5 is a block diagram showing a control structure of a mounting device according to an embodiment of the present invention.

圖6(a)係表示本發明之第一實施形態之安裝裝置之暫時壓接步驟中之晶片零件之暫時固定之態樣之概略圖，(b)同樣係表示正式壓接步驟中之晶片零件之固定之態樣之概略圖。 Fig. 6(a) is a schematic view showing a state in which the wafer component is temporarily fixed in the temporary crimping step of the mounting device according to the first embodiment of the present invention, and (b) is similarly showing the wafer component in the final crimping step. A sketch of the fixed aspect.

圖7係表示本發明之一實施形態之安裝裝置之加壓時之溫度狀態之曲線圖。 Fig. 7 is a graph showing the temperature state at the time of pressurization of the mounting device according to the embodiment of the present invention.

圖8係表示本發明之一實施形態之安裝裝置之控制態樣之流程圖。 Fig. 8 is a flow chart showing the control aspect of the mounting device according to an embodiment of the present invention.

圖9係表示本發明之一實施形態之安裝裝置之暫時壓接步驟中之控制態樣之流程圖。 Fig. 9 is a flow chart showing the control aspect in the temporary crimping step of the mounting device according to the embodiment of the present invention.

圖10係表示本發明之一實施形態之安裝裝置之絕熱支持步驟中之控制態樣之流程圖。 Fig. 10 is a flow chart showing the control aspect in the adiabatic support step of the mounting device according to the embodiment of the present invention.

圖11係表示本發明之一實施形態之安裝裝置之正式壓接步驟中之控制態樣之流程圖。 Fig. 11 is a flow chart showing the control aspect in the final crimping step of the mounting device according to the embodiment of the present invention.

圖12係表示本發明之第一實施形態之安裝裝置之正式壓接步驟 中之電路基板與晶片零件之熱之傳導之概略圖。 Figure 12 is a view showing a formal crimping step of the mounting device according to the first embodiment of the present invention; A schematic diagram of the conduction of heat between a circuit substrate and a wafer component.

圖13(a)係表示於本發明之第一實施形態之安裝裝置之暫時壓接步驟中將晶片零件積層而暫時固定之態樣之概略圖，(b)同樣係表示於正式壓接步驟中將晶片零件積層而固定之態樣之概略圖。 Fig. 13 (a) is a schematic view showing a state in which a wafer component is temporarily fixed in a temporary pressure bonding step of the mounting device according to the first embodiment of the present invention, and (b) is similarly shown in a formal pressure bonding step. A schematic view of a state in which a wafer component is laminated and fixed.

首先，使用圖1至圖5，對作為本發明之安裝裝置之一實施形態之安裝裝置1進行說明。 First, a mounting device 1 as an embodiment of the mounting device of the present invention will be described with reference to Figs. 1 to 5 .

於藉由安裝裝置1而連接於電路基板C之晶片零件D上，以覆蓋其焊料Da之方式貼附有包含熱固性樹脂且作為接著劑之非導電性膜(以下，簡記作「NCF」)。NCF具有黏度根據其溫度而變動之特性，且表現出如下性質：於未達由該特性所決定之基準溫度Ts之溫度區域不硬化，可逆地伴隨溫度之上升，黏度變低。另一方面，NCF表現出如下性質：於基準溫度Ts以上之溫度區域硬化，不可逆地伴隨溫度之上升，黏度變高。再者，於本實施形態中，NCF預先以覆蓋晶片零件D之焊料Da(參照圖6)之方式而貼附，但並不限定於此，亦可貼附於電路基板C側。電路基板C除酚醛紙基板、環氧紙基板、環氧玻璃基板、陶瓷基板等以外，亦可為矽基板。 The wafer device D connected to the circuit board C by the mounting device 1 is attached with a non-conductive film (hereinafter abbreviated as "NCF") containing a thermosetting resin as an adhesive so as to cover the solder Da. NCF has a characteristic that the viscosity varies depending on its temperature, and exhibits a property that the temperature region which does not reach the reference temperature Ts determined by the characteristic is not hardened, and the viscosity is lowered reversibly with an increase in temperature. On the other hand, the NCF exhibits a property of hardening in a temperature region equal to or higher than the reference temperature Ts, irreversibly accompanied by an increase in temperature, and a high viscosity. In the present embodiment, the NCF is attached so as to cover the solder Da of the wafer component D (see FIG. 6). However, the present invention is not limited thereto, and may be attached to the circuit board C side. The circuit board C may be a ruthenium substrate other than a phenolic paper substrate, an epoxy paper substrate, a glass epoxy substrate, a ceramic substrate, or the like.

如圖1所示，安裝裝置1係將晶片零件D安裝於電路基板C上者。安裝裝置1具備暫時壓接裝置2、正式壓接裝置12、搬送裝置23(參照圖5)及控制裝置24(參照圖5)。於以下之說明中，將自暫時壓接裝置2向正式壓接裝置12搬送電路基板C之方向設為X軸方向，將與該X軸方向正交之方向設為Y軸方向，將暫時壓接用頭7及正式壓接用頭19之垂直於電路基板C之移動方向設為Z軸方向，將以Z軸為中心而旋轉之方向設為θ方向而進行說明。再者，於本實施形態中，作為安裝裝置1之一實施形態，暫時壓接裝置2及正式壓接裝置12係分別構成，但並不限定於此。 As shown in FIG. 1, the mounting device 1 mounts the wafer component D on the circuit board C. The mounting device 1 includes a temporary pressure bonding device 2, a final pressure bonding device 12, a conveying device 23 (see FIG. 5), and a control device 24 (see FIG. 5). In the following description, the direction in which the temporary pressure bonding device 2 transfers the circuit board C to the final pressure bonding device 12 is set to the X-axis direction, and the direction orthogonal to the X-axis direction is set to the Y-axis direction, and the temporary pressure is applied. The direction in which the contact head 7 and the final crimping head 19 are perpendicular to the circuit board C is the Z-axis direction, and the direction in which the Z-axis is rotated about the Z-axis is defined as the θ direction. Further, in the present embodiment, the temporary pressure bonding device 2 and the final pressure bonding device 12 are configured as one embodiment of the mounting device 1, but the present invention is not limited thereto.

暫時壓接裝置2係藉由作為接著劑之NCF將晶片零件D暫時固定於電路基板C者。暫時壓接裝置2具備暫時壓接用基台3、暫時壓接用載台4、暫時壓接用支持框架5、暫時壓接用單元6、暫時壓接用頭7、暫時壓接用加熱器8(參照圖2)、暫時壓接用附接件9、作為距離測定機構之變位感測器10、及暫時壓接用圖像識別裝置11(參照圖5)。 The temporary pressure bonding device 2 temporarily fixes the wafer component D to the circuit board C by the NCF as an adhesive. The temporary pressure bonding device 2 includes a temporary pressure bonding base 3, a temporary pressure bonding stage 4, a temporary pressure bonding support frame 5, a temporary pressure bonding unit 6, a temporary pressure bonding head 7, and a temporary pressure bonding heater. 8 (refer to FIG. 2), the temporary pressure-bonding attachment 9, the displacement sensor 10 as a distance measuring means, and the temporary pressure-bonding image recognition apparatus 11 (refer FIG. 5).

暫時壓接用基台3係構成暫時壓接裝置2之主要構造體。暫時壓接用基台3以具有充分之剛性之方式使管材等組合而構成。暫時壓接用基台3支持暫時壓接用載台4及暫時壓接用支持框架5。 The temporary pressure bonding base 3 constitutes a main structure of the temporary pressure bonding device 2. The temporary pressure bonding base 3 is configured by combining pipes or the like so as to have sufficient rigidity. The temporary pressure bonding base 3 supports the temporary pressure bonding stage 4 and the temporary pressure bonding support frame 5.

暫時壓接用載台4係一面保持電路基板C一面使該電路基板C移動至任意之位置者。暫時壓接用載台4於驅動單元4a上安裝有可吸附保持電路基板C之吸附台4b而構成。暫時壓接用載台4安裝於暫時壓接用基台3上，且以可藉由驅動單元4a而使吸附台4b沿X軸方向、Y軸方向及θ方向移動之方式構成。即，暫時壓接用載台4以可使吸附於吸附台4b之電路基板C於暫時壓接用基台3上沿X軸方向、Y軸方向、θ方向移動之方式而構成。又，吸附台4b於暫時壓接時為縮小與電路基板C及晶片零件D之溫差以抑制熱之傳導而被加熱至特定溫度。再者，於本實施形態中，暫時壓接用載台4藉由吸附而保持電路基板C，但並不限定於此。 The temporary pressure bonding stage 4 is configured to move the circuit board C to an arbitrary position while holding the circuit board C. The temporary pressure bonding stage 4 is configured by attaching a suction stage 4b capable of adsorbing and holding the circuit board C to the driving unit 4a. The temporary pressure bonding stage 4 is attached to the temporary pressure bonding base 3, and is configured such that the suction stage 4b can be moved in the X-axis direction, the Y-axis direction, and the θ direction by the driving unit 4a. In other words, the temporary pressure bonding stage 4 is configured such that the circuit board C adsorbed on the adsorption stage 4b can be moved in the X-axis direction, the Y-axis direction, and the θ direction on the temporary pressure-bonding base 3 . Further, the suction stage 4b is heated to a specific temperature by reducing the temperature difference between the circuit board C and the wafer component D at the time of temporary pressure bonding to suppress heat conduction. In the present embodiment, the temporary pressure bonding stage 4 holds the circuit board C by suction, but the invention is not limited thereto.

暫時壓接用支持框架5係支持暫時壓接用單元6者。暫時壓接用支持框架5形成為板狀，且以自暫時壓接用基台3之暫時壓接用載台4之附近朝向Z軸方向延伸之方式構成。 The temporary pressure bonding support frame 5 supports the temporary pressure bonding unit 6. The temporary pressure-bonding support frame 5 is formed in a plate shape, and is configured to extend in the Z-axis direction from the vicinity of the temporary pressure-bonding stage 4 of the temporary pressure-bonding base 3 .

作為加壓單元之暫時壓接用單元6係使暫時壓接用頭7移動者。暫時壓接用單元6包含未圖示之伺服馬達及滾珠螺桿。暫時壓接用單元6以藉由利用伺服馬達使滾珠螺桿旋轉而產生滾珠螺桿之軸向之驅動力之方式構成。暫時壓接用單元6以暫時壓接用頭7之移動方向成為相對於電路基板C垂直之Z軸方向之方式安裝於暫時壓接用支持框架5 上。即，暫時壓接用單元6以產生Z軸方向之驅動力(加壓力)之方式而構成。暫時壓接用單元6以可藉由控制伺服馬達之輸出而任意地設定作為Z軸方向之加壓力之暫時壓接負荷Ft之方式構成。再者，於本實施形態中，暫時壓接用單元6設定為伺服馬達及滾珠螺桿之構成，但並不限定於此，亦可包含空壓致動器或油壓致動器。 The temporary pressure bonding unit 6 as the pressurizing unit moves the temporary pressure bonding head 7 . The temporary pressure bonding unit 6 includes a servo motor and a ball screw (not shown). The temporary pressure bonding unit 6 is configured to generate a driving force of the axial direction of the ball screw by rotating the ball screw by a servo motor. The temporary pressure bonding unit 6 is attached to the temporary pressure bonding support frame 5 such that the moving direction of the temporary pressure bonding head 7 becomes the Z-axis direction perpendicular to the circuit board C. on. In other words, the temporary pressure bonding unit 6 is configured to generate a driving force (pressure) in the Z-axis direction. The temporary pressure bonding unit 6 is configured to arbitrarily set the temporary pressure contact load Ft which is the pressing force in the Z-axis direction by controlling the output of the servo motor. In the present embodiment, the temporary pressure bonding unit 6 is configured as a servo motor and a ball screw. However, the present invention is not limited thereto, and may include a pneumatic actuator or a hydraulic actuator.

暫時壓接用頭7係將暫時壓接用單元6之驅動力傳遞至晶片零件D者。暫時壓接用頭7安裝於構成暫時壓接用單元6之未圖示之滾珠螺母上。又，暫時壓接用單元6以與暫時壓接用載台4對向之方式而配置。即，暫時壓接用頭7以可藉由利用暫時壓接用單元6於Z軸方向上移動而接近於暫時壓接用載台4之方式構成。如圖2所示，於暫時壓接用頭7上，設置有暫時壓接用加熱器8、暫時壓接用附接件9及變位感測器10。 The temporary pressure bonding head 7 transmits the driving force of the temporary pressure bonding unit 6 to the wafer component D. The temporary pressure bonding head 7 is attached to a ball nut (not shown) constituting the temporary pressure bonding unit 6. Further, the temporary pressure bonding unit 6 is disposed to face the temporary pressure bonding stage 4. In other words, the temporary pressure-bonding head 7 is configured to be close to the temporary pressure-bonding stage 4 by the temporary pressure-bonding unit 6 moving in the Z-axis direction. As shown in FIG. 2, the temporary pressure bonding head 7 is provided with a temporary pressure bonding heater 8, a temporary pressure bonding attachment 9, and a displacement sensor 10.

如圖2(a)所示，暫時壓接用加熱器8係用以加熱晶片零件D者。暫時壓接用加熱器8包含匣式加熱器，組裝於形成於暫時壓接用頭7上之孔等中。於本實施形態中，暫時壓接用加熱器8包含匣式加熱器，但並不限定於此，只要為矽橡膠加熱器等可加熱晶片零件D者即可。又，暫時壓接用加熱器8係組裝於暫時壓接用頭7上，但並不限定於此。 As shown in Fig. 2(a), the temporary pressure bonding heater 8 is used to heat the wafer component D. The temporary pressure bonding heater 8 includes a cymbal heater and is assembled in a hole or the like formed in the temporary pressure bonding head 7. In the present embodiment, the temporary pressure bonding heater 8 includes a crucible heater. However, the present invention is not limited thereto, and may be any one that can heat the wafer component D such as a rubber heater. Moreover, the temporary pressure bonding heater 8 is attached to the temporary pressure bonding head 7, but it is not limited to this.

暫時壓接用附接件9係保持晶片零件D者。暫時壓接用附接件9以與暫時壓接用載台4對向之方式設置於暫時壓接用頭7。暫時壓接用附接件9以可一面定位晶片零件D一面吸附保持該晶片零件D之方式而構成。又，暫時壓接用附接件9以由暫時壓接用加熱器8加熱之方式構成。即，暫時壓接用附接件9以定位、保持晶片零件D，並且藉由來自暫時壓接用加熱器8之傳熱而加熱貼附於晶片零件D之NCF之方式構成。 The temporary crimping attachment 9 holds the wafer component D. The temporary pressure-bonding attachment 9 is provided on the temporary pressure-bonding head 7 so as to face the temporary pressure-bonding stage 4 . The temporary crimping attachment member 9 is configured to be capable of accommodating and holding the wafer component D while positioning the wafer component D. Further, the temporary pressure bonding attachment 9 is configured to be heated by the temporary pressure bonding heater 8. That is, the temporary crimping attachment 9 is used to position and hold the wafer component D, and is configured to heat the NCF attached to the wafer component D by heat transfer from the temporary pressure bonding heater 8.

變位感測器10係對暫時壓接用頭7於Z軸方向上距任意之基準位 置之距離進行測定者。變位感測器10包含利用各種雷射光之變位感測器10。變位感測器10以可測定出暫時壓接完成時之暫時壓接用頭7於Z軸方向上距任意之基準位置之距離L(參照圖6(a))之方式而構成。再者，於本實施形態中，變位感測器10包含利用雷射光者，但並不限定於此，亦可包含利用超聲波者、線性光學尺、及自伺服馬達之編碼器計算出該距離者。 The displacement sensor 10 is a pair of temporary reference positions in the Z-axis direction of the temporary crimping head 7 The distance is measured. The displacement sensor 10 includes a displacement sensor 10 that utilizes various types of laser light. The displacement sensor 10 is configured to measure the distance L (see FIG. 6(a)) from the arbitrary reference position in the Z-axis direction of the temporary pressure-bonding head 7 at the time of completion of the temporary pressure bonding. Further, in the present embodiment, the displacement sensor 10 includes a person who uses laser light, but is not limited thereto, and may include the ultrasonic wave, the linear optical scale, and the encoder of the self-servo motor to calculate the distance. By.

如圖5所示，暫時壓接用圖像識別裝置11藉由圖像而取得晶片零件D及電路基板C之位置資訊者。暫時壓接用圖像識別裝置11以如下方式而構成，即對吸附保持於暫時壓接用載台4之電路基板C之位置對準標記及保持於暫時壓接用附接件9之晶片零件D之位置對準標記進行圖像識別，而取得電路基板C及晶片零件D之位置資訊。 As shown in FIG. 5, the image forming apparatus 11 for temporary pressure bonding acquires the position information of the wafer component D and the circuit board C by an image. The temporary pressure-bonding image recognition device 11 is configured such that the alignment mark attached to the circuit board C of the temporary pressure-bonding stage 4 and the wafer component held by the temporary pressure-bonding attachment 9 are formed. The positional alignment mark of D performs image recognition, and acquires positional information of the circuit board C and the wafer part D.

如圖1所示，正式壓接裝置12係藉由晶片零件D之焊料Da之熔接而將晶片零件D固定於電路基板C者。正式壓接裝置12具備正式壓接用基台13、正式壓接用載台14、絕熱構件15、冷卻裝置16、正式壓接用支持框架17、正式壓接用單元18、正式壓接用頭19、正式壓接用加熱器20、正式壓接用附接件21及正式壓接用圖像識別裝置22(參照圖5)。 As shown in FIG. 1, the final crimping device 12 fixes the wafer component D to the circuit board C by welding the solder Da of the wafer component D. The final pressure bonding device 12 includes a final pressure bonding base 13, a final pressure bonding stage 14, a heat insulating member 15, a cooling device 16, a final pressure bonding support frame 17, a final pressure bonding unit 18, and a final pressure bonding head. 19. The final pressure bonding heater 20, the final pressure bonding attachment 21, and the final pressure bonding image recognition device 22 (see Fig. 5).

正式壓接用基台13係構成正式壓接裝置12之主要構造體。正式壓接用基台13以具有充分之剛性之方式使管材等組合而構成。正式壓接用基台13支持正式壓接用載台14及正式壓接用支持框架17。 The main pressure bonding base 13 constitutes a main structure of the final pressure bonding device 12. The main pressure bonding base 13 is configured by combining pipes and the like so as to have sufficient rigidity. The main pressure bonding base 13 supports the final pressure bonding stage 14 and the final pressure bonding support frame 17.

正式壓接用載台14係一面保持電路基板C一面使該電路基板C移動至任意之位置者。正式壓接用載台14以可介隔絕熱構件15而吸附保持電路基板C之吸附台14b安裝於驅動單元14a上之方式構成。正式壓接用載台14安裝於正式壓接用基台13上，且以可藉由驅動單元14a而使吸附台14b沿X軸方向、Y軸方向及θ方向移動之方式構成。即，正式壓接用載台14以使介隔絕熱構件15而吸附於吸附台14b之電路基板 C於正式壓接用基台13上沿X軸方向、Y軸方向、θ方向移動之方式構成。 The main pressure bonding stage 14 moves the circuit board C to an arbitrary position while holding the circuit board C. The main pressure bonding stage 14 is configured such that the adsorption stage 14b that can block the holding of the circuit board C by the heat insulating member 15 is attached to the driving unit 14a. The main pressure bonding stage 14 is attached to the main pressure bonding base 13 and is configured such that the suction stage 14b can be moved in the X-axis direction, the Y-axis direction, and the θ direction by the driving unit 14a. That is, the circuit board 14 for the final pressure bonding is applied to the circuit board of the adsorption stage 14b by blocking the heat member 15 C is configured to move in the X-axis direction, the Y-axis direction, and the θ direction on the main pressure bonding base 13 .

如圖3(a)所示，於吸附台14b上，形成有複數個吸引通路14c。於吸引通路14c，連接有未圖示之吸引裝置。又，吸引通路14c於與設置於吸附台14b上之絕熱構件15重合之吸附台14b之上表面，與外部連通。又，吸附台14b於正式壓接時為縮小與電路基板C及晶片零件D之溫差以抑制熱之傳導而被加熱至特定溫度。再者，於本實施形態中，正式壓接用載台14藉由吸附而保持電路基板C，但並不限定於此。 As shown in Fig. 3(a), a plurality of suction passages 14c are formed in the adsorption stage 14b. A suction device (not shown) is connected to the suction passage 14c. Moreover, the suction passage 14c communicates with the outside on the upper surface of the adsorption stage 14b which overlaps with the heat insulating member 15 provided on the adsorption stage 14b. Further, the suction stage 14b is heated to a specific temperature by reducing the temperature difference between the circuit board C and the wafer part D during the final pressure bonding to suppress heat conduction. In the present embodiment, the main pressure bonding stage 14 holds the circuit board C by suction, but the present invention is not limited thereto.

絕熱構件15係抑制電路基板C與吸附台14b之間之熱之傳導者。絕熱構件15係熱導率為特定值以下(例如，1W/mK以下)之材料，包含具有可承受正式壓接用頭19之加壓力之抗負荷之材料。絕熱構件15以藉由未圖示之定位銷等而可裝卸於特定位置之狀態設置於吸附台14b上。 The heat insulating member 15 suppresses conduction of heat between the circuit board C and the suction stage 14b. The heat insulating member 15 is a material having a thermal conductivity of a specific value or less (for example, 1 W/mK or less), and includes a material having an anti-load which can withstand the pressing force of the main crimping head 19. The heat insulating member 15 is attached to the adsorption stage 14b in a state of being detachable from a specific position by a positioning pin or the like (not shown).

如圖3所示，絕熱構件15具有多孔質構造，且包含非晶質氧化矽粒子或氧化鋁等金屬氧化物。絕熱構件15以與吸附台14b之吸引通路14c重合之方式配置於吸附台14b上。因此，關於絕熱構件15，吸附台14b之吸引通路14c中所產生之吸引力通過多孔質構造之絕熱構件15而於絕熱構件15與電路基板C之接觸面產生(參照圖3(a)之箭頭)。再者，於本實施形態中，絕熱構件15具有多孔質構造，但並不限定於此，亦可為於絕熱構件15之與吸引通路14c重合之位置形成吸引孔而吸引電路基板C之構成。 As shown in FIG. 3, the heat insulating member 15 has a porous structure and contains amorphous cerium oxide particles or a metal oxide such as alumina. The heat insulating member 15 is disposed on the adsorption stage 14b so as to overlap the suction passage 14c of the adsorption stage 14b. Therefore, with respect to the heat insulating member 15, the suction force generated in the suction passage 14c of the adsorption stage 14b is generated by the heat insulating member 15 of the porous structure and is formed on the contact surface of the heat insulating member 15 and the circuit board C (refer to the arrow of Fig. 3 (a) ). In the present embodiment, the heat insulating member 15 has a porous structure. However, the heat insulating member 15 is not limited thereto, and may be configured such that a suction hole is formed at a position where the heat insulating member 15 overlaps the suction passage 14c to attract the circuit board C.

如圖3及圖4(a)所示，絕熱構件15分別設置於吸附台14b之與晶片零件D重合之部分，該晶片零件D與配置於吸附台14b之特定位置之電路基板C連接。即，複數個絕熱構件15設置於吸附台14b。進而，絕熱構件15分別形成為和與電路基板C中連接對應之晶片零件D之部分重合之部分大致相同之形狀。即，絕熱構件15形成為其大部分僅與電 路基板C中連接對應之晶片零件D之部分接觸之形狀。從而，複數個絕熱構件15以和與電路基板C中連接對應之晶片零件D之部分重合之部分接觸之狀態，不使電路基板C接觸於吸附台14b地支持該電路基板C。即，複數個絕熱構件15根據連接於電路基板C之晶片零件D之位置，隔開間隔而設置於吸附台14b上。從而，複數個絕熱構件15係以於電路基板C中不連接晶片零件D之部分與吸附台14b之間構成空間之方式而設置。 As shown in FIGS. 3 and 4(a), the heat insulating members 15 are respectively provided on a portion of the adsorption stage 14b that overlaps the wafer component D, and the wafer component D is connected to the circuit board C disposed at a specific position of the adsorption stage 14b. That is, a plurality of heat insulating members 15 are provided on the adsorption stage 14b. Further, the heat insulating members 15 are respectively formed in substantially the same shape as a portion overlapping the portions of the wafer component D that are connected to the circuit board C. That is, the heat insulating member 15 is formed such that most of it is only electrically The path substrate C is connected to the shape of the partial contact of the corresponding wafer part D. Therefore, the plurality of heat insulating members 15 are supported by the circuit board C without contacting the circuit board C with the suction stage 14b in a state of being in contact with a portion overlapping the portion of the wafer component D corresponding to the connection in the circuit board C. In other words, the plurality of heat insulating members 15 are provided on the adsorption stage 14b at intervals according to the position of the wafer component D connected to the circuit board C. Therefore, the plurality of heat insulating members 15 are provided so as to form a space between the portion of the circuit board C where the wafer component D is not connected and the adsorption stage 14b.

如圖3(b)所示，絕熱構件15於與電路基板C之接觸面形成有凹凸。絕熱構件15之構成凹凸之凸面15a(圖中之淡墨部分)係以如下方式而形成：使可藉由於與對應之晶片零件D重合之部分之凸面15a之總面積來承受正式壓接用頭19之加壓力之大小、及其總面積儘可能減小。從而，絕熱構件15之自電路基板C向絕熱構件15之導熱路徑減小。再者，於本實施形態中，絕熱構件15之凸面15a形成於與電路基板C之接觸面上，但並不限定於此，只要形成於與電路基板C之接觸面、及與吸附台14b之接觸面中之至少任一者上即可。 As shown in FIG. 3(b), the heat insulating member 15 is formed with irregularities on the surface in contact with the circuit board C. The convex surface 15a (the light ink portion in the figure) constituting the unevenness of the heat insulating member 15 is formed by receiving the main crimping head by the total area of the convex surface 15a which is overlapped with the corresponding wafer component D. The magnitude of the 19 plus pressure and its total area are reduced as much as possible. Thereby, the heat conduction path of the heat insulating member 15 from the circuit substrate C to the heat insulating member 15 is reduced. Further, in the present embodiment, the convex surface 15a of the heat insulating member 15 is formed on the contact surface with the circuit board C, but the present invention is not limited thereto, and is formed on the contact surface with the circuit board C and the adsorption stage 14b. At least one of the contact faces can be used.

圖5如所示，冷卻裝置16係冷卻絕熱構件15及電路基板C以避免鄰接之晶片零件D之未硬化NCF硬化者。於本實施形態中，冷卻裝置16包含空氣噴射裝置。如圖4(b)所示，冷卻裝置16以向包含複數個絕熱構件15、電路基板C中未連接晶片零件D之部分、及吸附台14b之空間內供給空氣之方式而構成。具體而言，冷卻裝置16通過形成於吸附台14b上之冷卻通路14d自未圖示之送風裝置供給空氣。即，冷卻裝置16以對複數個絕熱構件15、電路基板C中未連接晶片零件D之部分、及吸附台14b吹送空氣之方式而構成(參照圖4(b)中之白色箭頭)。從而，冷卻裝置16使向包含複數個絕熱構件15、電路基板C及吸附台14b之空間散發之熱量增大。 As shown in FIG. 5, the cooling device 16 cools the heat insulating member 15 and the circuit substrate C to prevent the uncured NCF hardener of the adjacent wafer component D. In the present embodiment, the cooling device 16 includes an air injection device. As shown in FIG. 4(b), the cooling device 16 is configured to supply air to a space including a plurality of heat insulating members 15, a portion of the circuit board C to which the wafer component D is not connected, and a suction table 14b. Specifically, the cooling device 16 supplies air from a blower (not shown) through a cooling passage 14d formed in the adsorption stage 14b. In other words, the cooling device 16 is configured to blow air to a portion of the plurality of heat insulating members 15 and the circuit board C where the wafer component D is not connected, and the adsorption table 14b (see a white arrow in FIG. 4(b)). Therefore, the cooling device 16 increases the amount of heat dissipated into the space including the plurality of heat insulating members 15, the circuit board C, and the adsorption stage 14b.

如圖1所示，正式壓接用支持框架17係支持正式壓接用單元18 者。正式壓接用支持框架17形成為大致板狀，且以自正式壓接用基台13之正式壓接用載台14之附近朝向Z軸方向延伸之方式而構成。 As shown in FIG. 1, the main crimping support frame 17 supports the main crimping unit 18 By. The main pressure-bonding support frame 17 is formed in a substantially plate shape, and is configured to extend in the Z-axis direction from the vicinity of the main pressure-bonding stage 14 of the final pressure-bonding base 13 .

作為加壓單元之正式壓接用單元18係使正式壓接用頭19移動者。正式壓接用單元18包含未圖示之伺服馬達及滾珠螺桿。正式壓接用單元18以藉由利用伺服馬達使滾珠螺桿旋轉而產生滾珠螺桿之軸向之驅動力之方式構成。正式壓接用單元18以正式壓接用頭19之移動方向成為相對於電路基板C垂直之Z軸方向之方式安裝於正式壓接用支持框架17上。即，正式壓接用單元18以可產生Z軸方向之驅動力(加壓力)之方式而構成。正式壓接用單元18以可藉由控制伺服馬達之輸出而任意地設定作為Z軸方向之加壓力之正式壓接負荷Fp之方式構成。再者，於本實施形態中，正式壓接用單元18設定為伺服馬達及滾珠螺桿之構成，但並不限定於此，亦可包含空壓致動器或油壓致動器。 The main pressure bonding unit 18 as the pressurizing unit moves the main pressure bonding head 19. The final pressure bonding unit 18 includes a servo motor and a ball screw (not shown). The main pressure bonding unit 18 is configured to generate a driving force of the axial direction of the ball screw by rotating the ball screw by a servo motor. The main pressure bonding unit 18 is attached to the main pressure bonding support frame 17 so that the moving direction of the main pressure bonding head 19 becomes the Z-axis direction perpendicular to the circuit board C. In other words, the main pressure bonding unit 18 is configured to generate a driving force (pressure) in the Z-axis direction. The main pressure bonding unit 18 is configured to arbitrarily set the final pressure contact load Fp which is the pressing force in the Z-axis direction by controlling the output of the servo motor. Further, in the present embodiment, the main pressure bonding unit 18 is configured as a servo motor and a ball screw. However, the present invention is not limited thereto, and may include a pneumatic actuator or a hydraulic actuator.

正式壓接用頭19係將正式壓接用單元18之驅動力傳遞至晶片零件D者。正式壓接用頭19安裝於構成正式壓接用單元18之未圖示之滾珠螺母上。又，正式壓接用頭19以與正式壓接用載台14對向之方式而配置。即，正式壓接用頭19以可藉由利用正式壓接用單元18於Z軸方向上移動而接近於正式壓接用載台14之方式構成。於正式壓接用頭19上，設置有正式壓接用加熱器20及複數個正式壓接用附接件21。 The main crimping head 19 transmits the driving force of the main crimping unit 18 to the wafer component D. The main crimping head 19 is attached to a ball nut (not shown) constituting the main pressure bonding unit 18. Further, the final pressure bonding head 19 is disposed to face the final pressure bonding stage 14. In other words, the main pressure-bonding head 19 is configured to be close to the final pressure-bonding stage 14 by being moved in the Z-axis direction by the main pressure-bonding unit 18. The main pressure bonding head 19 is provided with a main pressure bonding heater 20 and a plurality of main pressure bonding attachments 21.

如圖2(b)所示，正式壓接用加熱器20係用以加熱晶片零件D者。正式壓接用加熱器20包含匣式加熱器，組裝於形成於正式壓接用頭19上之孔等中。於本實施形態中，正式壓接用加熱器20包含匣式加熱器，但並不限定於此，只要為矽橡膠加熱器等可加熱晶片零件D者即可。 As shown in Fig. 2(b), the final pressure bonding heater 20 is used to heat the wafer component D. The final pressure bonding heater 20 includes a weir heater and is assembled in a hole or the like formed in the final pressure bonding head 19. In the present embodiment, the main pressure bonding heater 20 includes a 匣-type heater. However, the present invention is not limited thereto, and may be any one that can heat the wafer component D such as a ruthenium rubber heater.

正式壓接用附接件21係對晶片零件D加壓者。複數個正式壓接用附接件21以與正式壓接用載台14對向之方式而設置於正式壓接用頭19上。此時，正式壓接用附接件21經由橡膠構件21a而安裝於正式壓接 用頭19上，該橡膠構件21a用以吸收已被暫時壓接之晶片零件D之Z軸方向之不均一之彈性構件。進而，正式壓接用附接件21以藉由正式壓接用加熱器20而加熱之方式構成。即，正式壓接用附接件21以藉由橡膠構件21a吸收複數個晶片零件D之Z軸方向之不均一，並且可藉由來自正式壓接用加熱器20之傳熱而同時加熱複數個晶片零件D之方式構成。 The final crimping attachment 21 pressurizes the wafer component D. A plurality of the final pressure-bonding attachments 21 are provided on the main pressure-bonding head 19 so as to face the main pressure-bonding stage 14 . At this time, the final pressure-bonding attachment 21 is attached to the final crimping via the rubber member 21a. In the head 19, the rubber member 21a is for absorbing an uneven elastic member in the Z-axis direction of the wafer component D which has been temporarily crimped. Further, the final pressure bonding attachment 21 is configured to be heated by the main pressure bonding heater 20. That is, the final crimping attachment 21 absorbs the unevenness of the Z-axis direction of the plurality of wafer parts D by the rubber member 21a, and can simultaneously heat a plurality of heat by the heat transfer from the final pressure-bonding heater 20. The structure of the wafer part D is constructed.

如圖5所示，正式壓接用圖像識別裝置22係藉由圖像而取得晶片零件D及電路基板C之位置資訊者。正式壓接用圖像識別裝置22以如下方式而構成，即對電路基板C之位置對準標記及暫時固定於吸附保持於正式壓接用載台14之電路基板C上之晶片零件D之位置對準標記進行圖像識別，而取得電路基板C及晶片零件D之位置資訊。 As shown in FIG. 5, the image forming apparatus 22 for the final pressure bonding acquires the positional information of the wafer component D and the circuit board C by an image. The image forming apparatus 22 for the final pressure bonding is configured such that the alignment mark of the circuit board C and the position of the wafer component D temporarily fixed to the circuit board C adsorbed and held by the final pressure bonding stage 14 are temporarily fixed. The alignment mark performs image recognition to obtain positional information of the circuit board C and the wafer part D.

搬送裝置23係於暫時壓接裝置2與正式壓接裝置12之間進行電路基板C之交接者。搬送裝置23以可藉由暫時壓接裝置2之暫時壓接用載台4而將暫時壓接有複數個晶片零件D之電路基板C搬送至正式壓接裝置12之正式壓接用載台14之方式構成。此時，搬送裝置23以如下方式而配置，即設置於正式壓接用載台14之吸附台14b之絕熱構件15分別和與電路基板C中連接晶片零件D之部分重合之部分接觸(參照圖4(a))。 The conveying device 23 is a person who transfers the circuit board C between the temporary pressure bonding device 2 and the final pressure bonding device 12. The transport device 23 transports the circuit board C to which the plurality of wafer components D are temporarily pressed by the temporary pressure bonding stage 4 of the temporary pressure bonding device 2 to the final pressure bonding stage 14 of the final pressure bonding device 12. The way it is structured. At this time, the conveying device 23 is disposed such that the heat insulating members 15 provided on the adsorption stage 14b of the final pressure bonding stage 14 are in contact with the portions of the circuit board C that overlap the portion where the wafer component D is connected (see the drawing). 4(a)).

控制裝置24係對暫時壓接裝置2、正式壓接裝置12及搬送裝置23等進行控制者。控制裝置24實體上亦可為CPU(Central Processing Unit，中央處理單元)、ROM(Read Only Memory，唯讀記憶體)、RAM(Random-Access Memory，隨機存取記憶體)、HDD(Hard Disk Drive，硬碟驅動器)等藉由匯流排而連接之構成，或者亦可為包含單片之LSI(Large Scale Integration，大規模積體電路)等之構成。控制裝置24為對暫時壓接裝置2、正式壓接裝置12及搬送裝置23等進行控制而儲存有各種程式及資料。 The control device 24 controls the temporary pressure bonding device 2, the final pressure bonding device 12, the conveying device 23, and the like. The control device 24 may also be a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random-Access Memory), and an HDD (Hard Disk Drive). A hard disk drive or the like is connected by a bus bar, or may be a LSI (Large Scale Integration) or the like including a single chip. The control device 24 controls the temporary pressure bonding device 2, the final pressure bonding device 12, the conveying device 23, and the like, and stores various programs and materials.

控制裝置24連接於暫時壓接用載台4及正式壓接用載台14，可分別對暫時壓接用載台4及正式壓接用載台14之X軸方向、Y軸方向、θ方向上之移動量進行控制。 The control device 24 is connected to the temporary pressure-bonding stage 4 and the final pressure-bonding stage 14 so as to be in the X-axis direction, the Y-axis direction, and the θ direction of the temporary pressure-bonding stage 4 and the final pressure-bonding stage 14 respectively. The amount of movement on the top is controlled.

控制裝置24連接於暫時壓接用加熱器8及正式壓接用加熱器20，可分別對暫時壓接用加熱器8及正式壓接用加熱器20之溫度進行控制。特別地，控制裝置24可將正式壓接用頭19之加壓時之平均溫度維持於包含NCF之硬化溫度(下述基準溫度Ts)以上且焊料Da之熔點以上之溫度之特定範圍內。 The control device 24 is connected to the temporary pressure bonding heater 8 and the final pressure bonding heater 20, and can control the temperatures of the temporary pressure bonding heater 8 and the final pressure bonding heater 20, respectively. In particular, the control device 24 can maintain the average temperature at the time of pressurization of the main crimping head 19 within a specific range including the hardening temperature of the NCF (the following reference temperature Ts) or more and the temperature of the melting point of the solder Da.

控制裝置24連接於暫時壓接用單元6及正式壓接用單元18，可分別對暫時壓接用單元6及正式壓接用單元18之Z軸方向上之加壓力進行控制。 The control device 24 is connected to the temporary pressure bonding unit 6 and the final pressure bonding unit 18, and can control the pressing force in the Z-axis direction of the temporary pressure bonding unit 6 and the final pressure bonding unit 18, respectively.

控制裝置24連接於暫時壓接用附接件9，可對暫時壓接用附接件9之吸附狀態進行控制。 The control device 24 is connected to the temporary pressure-bonding attachment member 9, and can control the adsorption state of the temporary pressure-bonding attachment member 9.

控制裝置24連接於暫時壓接用圖像識別裝置11及正式壓接用圖像識別裝置22，可分別對暫時壓接用圖像識別裝置11及正式壓接用圖像識別裝置22進行控制，而取得晶片零件D及電路基板C之位置資訊。 The control device 24 is connected to the temporary pressure-bonding image recognition device 11 and the final pressure-bonding image recognition device 22, and can control the temporary pressure-bonding image recognition device 11 and the final pressure-contact image recognition device 22, respectively. The position information of the wafer part D and the circuit board C is obtained.

控制裝置24連接於冷卻裝置16，可對冷卻裝置16進行控制。 The control device 24 is connected to the cooling device 16, and the cooling device 16 can be controlled.

控制裝置24連接於搬送裝置23，可對搬送裝置23進行控制。 The control device 24 is connected to the transport device 23, and can control the transport device 23.

控制裝置24連接於變位感測器10，可自變位感測器10取得暫時壓接完成時之Z軸方向上之距離。特別地，控制裝置24可對暫時固定時之晶片零件D之Z軸方向不均一是否處於特定範圍(下述基準範圍Ls)以外進行判定。 The control device 24 is connected to the displacement sensor 10, and the distance in the Z-axis direction when the temporary crimping is completed can be obtained from the displacement sensor 10. In particular, the control device 24 can determine whether or not the Z-axis direction non-uniformity of the wafer component D during temporary fixation is outside a specific range (the following reference range Ls).

其次，使用圖4至圖7，對藉由本發明之安裝裝置1而將晶片零件D連接於電路基板C之安裝方法進行說明。本發明之安裝方法包含暫時壓接步驟、絕熱支持步驟及正式壓接步驟。 Next, a method of attaching the wafer component D to the circuit board C by the mounting device 1 of the present invention will be described with reference to FIGS. 4 to 7. The mounting method of the present invention includes a temporary crimping step, an adiabatic support step, and a formal crimping step.

如圖6(a)所示，於暫時壓接步驟中，安裝裝置1將電路基板C吸附 保持於暫時壓接裝置2之暫時壓接用載台4之特定位置。然後，安裝裝置1藉由暫時壓接用單元6而將晶片零件D加熱至暫時壓接溫度Tt(參照圖7)。暫時壓接溫度Tt設定為低於基準溫度Ts。即，安裝裝置1於NCF不硬化之溫度區域以NCF成為特定之黏度之方式對暫時壓接用加熱器8之溫度進行控制。進而，安裝裝置1以暫時壓接負荷Ft對電路基板C加壓而暫時固定於電路基板C。晶片零件D藉由暫時壓接用加熱器8而加熱，由此使夾在晶片零件D之焊料Da之間之NCF成為特定之黏度，藉由暫時壓接用單元6而朝向電路基板C加壓，由此使NCF密接於電路基板C。以此方式，安裝裝置1將複數個晶片零件D暫時固定於電路基板C。 As shown in FIG. 6(a), in the temporary crimping step, the mounting device 1 adsorbs the circuit substrate C. It is held at a specific position of the temporary pressure bonding stage 4 of the temporary pressure bonding device 2. Then, the mounting device 1 heats the wafer component D to the temporary crimping temperature Tt by the temporary pressure bonding unit 6 (refer to FIG. 7). The temporary crimping temperature Tt is set to be lower than the reference temperature Ts. That is, the mounting device 1 controls the temperature of the temporary pressure bonding heater 8 so that the NCF becomes a specific viscosity in a temperature region where the NCF is not hardened. Further, the mounting device 1 pressurizes the circuit board C with the temporary crimping load Ft and temporarily fixes it to the circuit board C. The wafer component D is heated by the temporary pressure bonding heater 8, whereby the NCF sandwiched between the solders Da of the wafer component D becomes a specific viscosity, and is pressed toward the circuit substrate C by the temporary crimping unit 6. Thereby, the NCF is adhered to the circuit board C. In this way, the mounting device 1 temporarily fixes a plurality of wafer parts D to the circuit substrate C.

其次，如圖4(a)及圖5所示，於絕熱支持步驟中，安裝裝置1藉由搬送裝置23而將電路基板C自暫時壓接裝置2之暫時壓接用載台4搬送至正式壓接裝置12之正式壓接用載台14。安裝裝置1以設置於正式壓接用載台14之吸附台14b上之絕熱構件15支持電路基板C之方式而配置。其次，安裝裝置1經由絕熱構件15而將電路基板C吸附保持於正式壓接用載台14之吸附台14b。然後，如圖4(b)所示，安裝裝置1藉由冷卻裝置16而向電路基板C與吸附台14b之間之空間供給空氣。 Next, as shown in FIG. 4(a) and FIG. 5, in the heat insulating support step, the mounting device 1 transports the circuit board C from the temporary pressure bonding stage 4 of the temporary pressure bonding apparatus 2 to the official by the conveying device 23. The final pressure bonding stage 14 of the crimping device 12. The mounting device 1 is disposed such that the heat insulating member 15 provided on the adsorption stage 14b of the final pressure bonding stage 14 supports the circuit board C. Next, the mounting device 1 adsorbs and holds the circuit board C to the adsorption stage 14b of the final pressure bonding stage 14 via the heat insulating member 15. Then, as shown in FIG. 4(b), the mounting device 1 supplies air to the space between the circuit board C and the adsorption stage 14b by the cooling device 16.

其次，如圖6(b)所示，於正式壓接步驟中，安裝裝置1藉由正式壓接用單元18而將複數個晶片零件D同時加熱至正式壓接溫度Tp(參照圖7)。正式壓接溫度Tp設定於基準溫度Ts以上且焊料Da之熔點以上之固定範圍內。即，安裝裝置1以處於NCF硬化之溫度區域且NCF成為特定之正式壓接黏度(硬度)並且焊料Da熔融之方式，控制正式壓接用加熱器20之溫度。進而，安裝裝置1以正式壓接負荷Fp加壓而固定於電路基板C。此時，安裝裝置1藉由正式壓接附接件之橡膠構件21a而吸收暫時固定於電路基板C之複數個晶片零件D之Z軸方向之位置之不均一。晶片零件D之NCF已被加熱至基準溫度Ts以上，因此開始硬 化。安裝裝置1於晶片零件D之NCF完全硬化之前，使電路基板C之焊墊Ca與晶片零件D之焊料Da接觸，而使電路基板C與晶片零件D連接。 Next, as shown in FIG. 6(b), in the final pressure bonding step, the mounting device 1 simultaneously heats a plurality of wafer parts D to the final pressure bonding temperature Tp by the main pressure bonding unit 18 (see FIG. 7). The final pressure contact temperature Tp is set within a fixed range of the reference temperature Ts or more and the melting point of the solder Da. In other words, the mounting device 1 controls the temperature of the final pressure bonding heater 20 so that the NCF becomes a specific final pressure-bonding viscosity (hardness) and the solder Da is melted in a temperature region where the NCF is hardened. Further, the mounting device 1 is pressed and fixed to the circuit board C by the final crimping load Fp. At this time, the mounting device 1 absorbs the unevenness of the position of the plurality of wafer parts D temporarily fixed to the circuit board C in the Z-axis direction by the rubber member 21a of the main crimping attachment. The NCF of wafer part D has been heated above the reference temperature Ts, so it starts to hard Chemical. The mounting device 1 connects the pad Ca of the circuit substrate C to the solder Da of the wafer component D before the NCF of the wafer component D is completely cured, and connects the circuit substrate C to the wafer component D.

以下，使用圖8至圖12，具體地對本發明之安裝裝置1之控制態樣進行說明。再者，於以下之控制態樣中，暫時壓接用加熱器8預先維持於將晶片零件D加熱於暫時壓接溫度Tt所需之溫度，正式壓接用加熱器20預先維持於將晶片零件D加熱於正式壓接溫度Tp所需之溫度。 Hereinafter, the control aspect of the mounting device 1 of the present invention will be specifically described using Figs. 8 to 12 . Further, in the following control aspect, the temporary pressure bonding heater 8 is previously maintained at a temperature required to heat the wafer component D to the temporary pressure bonding temperature Tt, and the final pressure bonding heater 20 is previously held in the wafer component. D is heated to the temperature required for the final crimping temperature Tp.

如圖8所示，於步驟S100中，控制裝置24開始暫時壓接步驟控制A，並使步驟移行至步驟110(參照圖9)。然後，若暫時壓接步驟控制A結束，則使步驟移行至步驟S200。 As shown in Fig. 8, in step S100, the control device 24 starts the temporary crimping step control A, and moves the step to step 110 (refer to Fig. 9). Then, if the temporary crimping step control A ends, the process proceeds to step S200.

於步驟S200中，控制裝置24對距離L(1)至距離L(n)中最大之距離Lmax與最小之Lmin之差(暫時固定時之晶片零件D之Z軸方向不均一)是否為基準範圍Ls以下進行判斷，該距離L(1)至距離L(n)係將所取得之同時正式壓接之n個晶片零件D暫時固定於電路基板C時之距離。 In step S200, the control device 24 determines whether the difference between the maximum distance Lmax and the minimum Lmin of the distance L(1) to the distance L(n) (the Z-axis direction of the wafer component D during the temporary fixing is not uniform) is the reference range. Ls is determined as follows. The distance L(1) to the distance L(n) is the distance at which the obtained n wafer parts D which are actually crimped at the same time are temporarily fixed to the circuit board C.

其結果，於判定被暫時固定之n個晶片零件D之Z軸方向不均一為基準範圍Ls以下之情形時，控制裝置24使步驟移行至步驟S300。 As a result, when it is determined that the Z-axis direction unevenness of the n wafer parts D that are temporarily fixed is equal to or less than the reference range Ls, the control device 24 shifts the step to step S300.

另一方面，於判定被暫時固定之n個晶片零件D之Z軸方向不均一非基準範圍Ls以下之情形時，即，判定暫時固定不良之情形時，控制裝置24結束步驟。 On the other hand, when it is determined that the Z-axis direction of the temporarily fixed n wafer parts D is not equal to or less than the non-reference range Ls, that is, when the temporary fixing failure is determined, the control device 24 ends the step.

於步驟S300中，控制裝置24開始絕熱支持步驟控制B，並使步驟移行至步驟310(參照圖10)。然後，若絕熱支持步驟控制B結束，則使步驟移行至步驟S400。 In step S300, the control device 24 starts the adiabatic support step control B, and moves the step to step 310 (refer to FIG. 10). Then, if the adiabatic support step control B ends, the step is moved to step S400.

於步驟S400中，控制裝置24開始正式壓接步驟控制C，並使步驟移行至步驟S410(參照圖11)。然後，若正式壓接步驟控制C結束，則結束步驟。 In step S400, the control device 24 starts the formal pressure bonding step control C, and moves the step to step S410 (refer to FIG. 11). Then, if the formal crimping step control C ends, the step ends.

如圖9所示，於步驟S110中，控制裝置24藉由暫時壓接用載台4之吸附台4b而吸附保持利用搬送裝置23搬送自未圖示之上游步驟之電路基板C，並使步驟移行至步驟S120。 As shown in FIG. 9, in step S110, the control device 24 sucks and holds the circuit board C that has been transported from the upstream step (not shown) by the transfer device 23 by the adsorption stage 4b of the temporary pressure bonding stage 4, and the steps are performed. The process proceeds to step S120.

於步驟S120中，控制裝置24藉由暫時壓接用頭7之暫時壓接用附接件9吸附保持晶片零件D，並使步驟移行至步驟S130。 In step S120, the control device 24 sucks and holds the wafer component D by the temporary crimping attachment 9 of the temporary crimping head 7, and the process proceeds to step S130.

於步驟S130中，控制裝置24藉由暫時壓接用圖像識別裝置11而取得吸附保持於暫時壓接用頭7之暫時壓接用附接件9之晶片零件D之位置對準標記、及吸附保持於暫時壓接用載台4之電路基板C之位置對準標記之圖像資訊，並使步驟移行至步驟S140。 In step S130, the control device 24 acquires the alignment mark of the wafer component D that is held by the temporary pressure bonding attachment 9 of the temporary pressure bonding head 7 by the image forming apparatus 11 for temporary pressure bonding, and The image information of the position alignment mark held by the circuit board C of the temporary pressure bonding stage 4 is adsorbed, and the process proceeds to step S140.

於步驟S140中，控制裝置24基於所取得之電路基板C及晶片零件D之圖像資訊，而計算出用於電路基板C及晶片零件D之位置對準之暫時壓接用載台4之X軸方向、Y軸方向、θ方向之座標位置，並且藉由驅動單元4a而使暫時壓接用載台4之吸附台4b移動，使步驟移行至步驟S150。 In step S140, the control device 24 calculates the X of the temporary pressure bonding stage 4 for alignment of the circuit board C and the wafer component D based on the acquired image information of the circuit board C and the wafer component D. The coordinate position in the axial direction, the Y-axis direction, and the θ direction, and the suction stage 4b of the temporary pressure-bonding stage 4 is moved by the drive unit 4a, and the process proceeds to step S150.

於步驟S150中，控制裝置24藉由暫時壓接用單元6以暫時壓接負荷Ft實施特定時間之加壓，而將吸附保持於暫時壓接用附接件9之晶片零件D暫時固定於吸附保持於暫時壓接用載台4之電路基板C，並使步驟移行至步驟S160。 In the step S150, the control device 24 performs the pressing for a specific time by the temporary pressure-bonding load Ft by the temporary pressure-bonding unit 6, and temporarily fixes the wafer component D adsorbed and held by the temporary pressure-bonding attachment member 9 to the adsorption. The circuit board C held by the temporary pressure bonding stage 4 is held, and the process proceeds to step S160.

於步驟S160中，控制裝置24藉由變位感測器10而取得暫時固定於電路基板C之晶片零件D(暫時壓接用頭7)之Z軸方向上之距離L(n)，並使步驟移行至步驟S170。 In step S160, the control device 24 acquires the distance L(n) in the Z-axis direction of the wafer component D (temporary pressure bonding head 7) temporarily fixed to the circuit board C by the displacement sensor 10, and The process moves to step S170.

於步驟S170中，控制裝置24對藉由暫時壓接用單元6而將晶片零件D暫時固定於電路基板C之作業是否已全部結束進行判斷。 In step S170, the control device 24 determines whether or not the operation of temporarily fixing the wafer component D to the circuit board C by the temporary pressure bonding unit 6 has been completed.

其結果，於判定藉由暫時壓接用單元6而晶片零件D暫時固定於電路基板C之作業已全部結束之情形時，控制裝置24結束暫時壓接步驟控制A，並使步驟移行至步驟S200(參照圖8)。 As a result, when it is determined that all of the operations of temporarily fixing the wafer component D to the circuit board C by the temporary pressure bonding unit 6 are completed, the control device 24 ends the temporary pressure bonding step control A, and the process proceeds to step S200. (Refer to Figure 8).

另一方面，於判定藉由暫時壓接用單元6而晶片零件D暫時固定於電路基板C之作業並未全部結束之情形時，控制裝置24使步驟移行至步驟S120。 On the other hand, when it is determined that the operation of temporarily fixing the wafer component D to the circuit board C by the temporary pressure bonding unit 6 is not completed, the control device 24 shifts the step to step S120.

如圖10所示，於步驟S310中，控制裝置24將藉由搬送裝置23搬送自暫時壓接用載台4之電路基板C搬送至設置於正式壓接用載台14之吸附台14b上之絕熱構件15，並使步驟移行至步驟S320。 As shown in FIG. 10, in step S310, the control device 24 transports the circuit board C transported from the temporary pressure-bonding stage 4 by the transport unit 23 to the adsorption stage 14b provided on the final pressure-bonding stage 14. The member 15 is insulated and the steps are moved to step S320.

於步驟S320中，控制裝置24藉由正式壓接用載台14之吸附台14b介隔絕熱構件15而吸附保持藉由搬送裝置23搬送自暫時壓接用載台4之電路基板C。即，控制裝置24一面藉由絕熱構件15支持電路基板C中與晶片零件D重合之部分一面藉由吸附台14b而吸附保持，並使步驟移行至步驟S330。 In the step S320, the control unit 24 sucks and holds the circuit board C of the temporary pressure-bonding stage 4 by the transport unit 23 by the heat-absorbing member 15 by the suction stage 14b of the main pressure-bonding stage 14. In other words, the control device 24 is held by the adsorption stage 14b while supporting the portion of the circuit board C that overlaps the wafer component D by the heat insulating member 15, and the process proceeds to step S330.

於步驟S330中，控制裝置24藉由冷卻裝置16向包含藉由搬送裝置23而搬送自暫時壓接用載台4之電路基板C、絕熱構件15及吸附台14b之空間供給空氣。即，控制裝置24開始藉由冷卻裝置16向電路基板C、絕熱構件15及吸附台14b吹送空氣，結束絕熱支持步驟控制B後使步驟移行至步驟S400(參照圖8)。 In step S330, the control device 24 supplies air to the space including the circuit board C, the heat insulating member 15, and the suction stage 14b that are transported from the temporary pressure bonding stage 4 by the transport device 23 by the cooling device 16. In other words, the control device 24 starts to blow air to the circuit board C, the heat insulating member 15 and the suction stage 14b by the cooling device 16, and ends the heat insulation support step control B, and then the process proceeds to step S400 (see Fig. 8).

如圖11所示，於步驟S410中，控制裝置24藉由正式壓接用圖像識別裝置22取得吸附保持於正式壓接用載台14之電路基板C之位置對準標記之圖像資訊，並使步驟移行至步驟S420。 As shown in FIG. 11, in step S410, the control device 24 acquires image information of the position alignment mark of the circuit board C held by the main pressure bonding stage 14 by the image forming apparatus 22 for the final pressure bonding. And the step is moved to step S420.

於步驟S420中，控制裝置24基於電路基板C之圖像資訊，計算出用於電路基板C之位置對準之正式壓接用載台14之X軸方向、Y軸方向、θ方向之座標位置，並且藉由驅動單元14a使正式壓接用載台14之吸附台14b移動，並使步驟移行至步驟S430。 In step S420, the control device 24 calculates the coordinate positions of the X-axis direction, the Y-axis direction, and the θ direction of the final pressure-bonding stage 14 for alignment of the circuit board C based on the image information of the circuit board C. Then, the suction stage 14b of the final pressure bonding stage 14 is moved by the driving unit 14a, and the process proceeds to step S430.

於步驟S430中，控制裝置24藉由正式壓接用單元18將暫時固定於電路基板C之複數個晶片零件D以正式壓接負荷Fp加壓特定時間，而固定於該電路基板C，並使步驟移行至步驟S440。 In the step S430, the control device 24 fixes the plurality of wafer components D temporarily fixed to the circuit board C by the main crimping unit 18 by pressing the final crimping load Fp for a specific time, and fixes the circuit board C to the circuit board C. The process moves to step S440.

於步驟S440中，控制裝置24對藉由正式壓接用單元18將晶片零件D固定於電路基板C之作業是否已全部結束進行判斷。 In step S440, the control device 24 determines whether or not the operation of fixing the wafer component D to the circuit board C by the main pressure bonding unit 18 has been completed.

其結果，於判定藉由正式壓接用單元18將晶片零件D固定於電路基板C之作業已全部結束之情形時，控制裝置24結束正式壓接步驟控制C，並結束步驟。 As a result, when it is determined that all of the operations of fixing the wafer component D to the circuit board C by the main pressure bonding unit 18 have been completed, the control device 24 ends the final pressure bonding step control C, and ends the step.

另一方面，於判定藉由正式壓接用單元18將晶片零件D固定於電路基板C之作業未全部結束之情形時，控制裝置24使步驟移行至步驟S410。 On the other hand, when it is determined that the operation of fixing the wafer component D to the circuit board C by the main pressure bonding unit 18 is not completed, the control device 24 shifts the step to step S410.

藉由以此方式而構成，安裝裝置1於絕熱支持步驟中，一面藉由絕熱構件15支持電路基板C之暫時壓接有晶片零件D之部分之吸附台14b側一面藉由冷卻裝置16冷卻。即，僅以絕熱構件15之凸面15a支持電路基板C中經正式壓接裝置12加熱及加壓之部分，且藉由空氣之吹送而冷卻(參照圖4)。藉此，安裝裝置1藉由絕熱構件15所達成之絕熱效果使熱自電路基板C向吸附台14b之傳導減少，並且使自電路基板C向絕熱構件15之導熱路徑減少。進而，安裝裝置1藉由冷卻裝置16之空氣吹送而使自電路基板C及絕熱構件15向空間散發之熱量增大。於電路基板C為熱導率較高之矽基板之情形時，冷卻裝置16所實施之冷卻尤其有效地發揮作用。因此，如圖12所示，安裝裝置1於正式壓接步驟中，即便以正式壓接溫度Tp加熱晶片零件D亦可抑制熱向外部之傳導(參照黑色箭頭)。即，安裝裝置1可於正式壓接步驟中，減少因熱向鄰接之晶片零件D之傳導而導致之連接不良。 According to this configuration, in the adiabatic support step, the mounting device 1 is cooled by the cooling device 16 while supporting the side of the adsorption stage 14b of the circuit board C on which the wafer component D is temporarily bonded by the heat insulating member 15. That is, only the portion of the circuit board C that has been heated and pressurized by the main pressure bonding device 12 is supported by the convex surface 15a of the heat insulating member 15, and is cooled by air blowing (see Fig. 4). Thereby, the heat radiation effect by the heat insulating member 15 of the mounting apparatus 1 reduces the conduction of heat from the circuit board C to the adsorption stage 14b, and reduces the heat conduction path from the circuit board C to the heat insulating member 15. Further, the mounting device 1 increases the amount of heat radiated from the circuit board C and the heat insulating member 15 to the space by the air blowing of the cooling device 16. In the case where the circuit board C is a crucible substrate having a high thermal conductivity, the cooling performed by the cooling device 16 functions particularly effectively. Therefore, as shown in FIG. 12, in the final pressure bonding step, the mounting apparatus 1 can suppress the conduction of heat to the outside even if the wafer component D is heated at the final pressure contact temperature Tp (refer to the black arrow). That is, the mounting device 1 can reduce the connection failure due to the conduction of heat to the adjacent wafer component D in the final pressure bonding step.

其次，使用圖13，對利用本發明之安裝裝置1多層地積層而進行安裝(以下，簡記作「積層安裝」)之實施形態進行說明。再者，於以下之實施形態中，對於與已說明之實施形態相同之點省略其具體之說明，而以不同之部分為中心進行說明。 Next, an embodiment in which the mounting apparatus 1 of the present invention is laminated in a plurality of layers (hereinafter, simply referred to as "layered mounting") will be described with reference to FIG. In the following embodiments, the detailed description of the embodiments will be omitted, and the description will be omitted.

如圖13(a)所示，積層安裝係指將複數個晶片零件D重疊而安裝於 電路基板C上。用於積層安裝之晶片零件D形成有貫通電極Db，於貫通電極之一個或兩個端部設置有焊料Da。進而，以覆蓋晶片零件D之焊料Da之方式貼附有NCF。 As shown in FIG. 13(a), the build-up mounting means that a plurality of wafer parts D are overlapped and mounted on On the circuit board C. The wafer component D for laminated mounting is formed with a through electrode Db, and solder Da is provided at one or both end portions of the through electrode. Further, the NCF is attached so as to cover the solder Da of the wafer component D.

安裝裝置1於暫時壓接步驟中，將第1晶片零件D1暫時固定於已被定位之電路基板C上。進而，安裝裝置1使第2晶片零件D2積層而暫時固定於第1晶片零件D1上，使第3晶片零件D3積層而暫時固定於第2晶片零件D2上。以此方式，安裝裝置1於暫時壓接步驟中，將複數個晶片零件D(n)積層而暫時固定於電路基板C上。 In the temporary crimping step, the mounting device 1 temporarily fixes the first wafer component D1 on the circuit board C that has been positioned. Further, the mounting device 1 temporarily laminates the second wafer component D2 to the first wafer component D1, and laminates the third wafer component D3 to be temporarily fixed to the second wafer component D2. In this manner, in the temporary crimping step, the mounting device 1 laminates a plurality of wafer parts D(n) and temporarily fixes them on the circuit board C.

安裝裝置1藉由暫時壓接用圖像識別裝置11而取得暫時固定於電路基板C上之第(n-1)晶片零件D(n-1)之位置對準標記、及吸附保持於暫時壓接用附接件9之第n晶片零件D(n)之位置對準標記之圖像資訊，並且以第(n-1)晶片零件D(n-1)之焊料Da或貫通電極Db與第n晶片零件D(n)之焊料Da或貫通電極Db重合之方式，進行電路基板C(第(n-1)晶片零件D(n-1))之X軸方向、Y軸方向、θ方向之位置對準。然後，安裝裝置1藉由暫時壓接用單元6而以暫時壓接負荷Ft對第n晶片零件D(n)加壓。以此方式，安裝裝置1於暫時壓接裝置2中，使第1晶片零件D1至第n晶片零件D(n)積層而暫時固定於電路基板C上。 The mounting device 1 obtains the positional alignment mark of the (n-1)th wafer component D(n-1) temporarily fixed on the circuit board C by the temporary pressure-bonding image recognition device 11, and adsorbs and holds it at a temporary pressure. The n-th wafer part D(n) of the attachment member 9 is attached with the image information of the alignment mark, and the solder da or the through electrode Db of the (n-1)th wafer part D(n-1) and the first The X-axis direction, the Y-axis direction, and the θ direction of the circuit board C (the (n-1)th wafer part D(n-1)) are performed so that the solder Da or the through electrode Db of the wafer part D(n) overlap. Positioning. Then, the mounting device 1 pressurizes the nth wafer component D(n) with the temporary crimping load Ft by the temporary crimping unit 6. In this manner, in the temporary crimping device 2, the mounting device 1 laminates the first wafer component D1 to the n-th wafer component D(n) and temporarily fixes it on the circuit board C.

其次，如圖13(b)所示，安裝裝置1於正式壓接步驟中，將積層而暫時固定於已被定位之電路基板C上之第1晶片零件D1至第n晶片零件D(n)固定。 Next, as shown in FIG. 13(b), in the final pressure bonding step, the mounting device 1 temporarily laminates the first wafer part D1 to the nth wafer part D(n) on the circuit board C that has been positioned. fixed.

安裝裝置1藉由正式壓接用圖像識別裝置22取得電路基板C之位置對準標記之圖像資訊，並且以正式壓接用頭19之正式壓接用附接件21與積層之第1晶片零件D1至第n晶片零件D(n)重合之方式，進行電路基板C之X軸方向、Y軸方向、θ方向之位置對準。然後，安裝裝置1藉由正式壓接用單元18以正式壓接負荷Fp同時對積層之第1晶片零件D1至第n晶片零件D(n)加壓。以此方式，安裝裝置1於正式壓接裝置12 中，將積層而暫時固定於電路基板C上之第1晶片零件D1至第n晶片零件D(n)同時固定而積層安裝。再者，於本實施形態中，表示積層有3層晶片零件D者，但並不限定於此，亦可積層有4層以上。 The mounting device 1 acquires the image information of the position alignment mark of the circuit board C by the image forming apparatus 22 for the final pressure bonding, and the first pressure-bonding attachment 21 of the main pressure bonding head 19 and the first layer of the laminate. The wafer component D1 to the nth wafer component D(n) are superposed so that the position of the circuit board C in the X-axis direction, the Y-axis direction, and the θ direction is aligned. Then, the mounting device 1 presses the laminated first wafer part D1 to the nth wafer part D(n) by the final pressure bonding unit F18 by the final pressure bonding unit 18. In this way, the mounting device 1 is in the formal crimping device 12 In the meantime, the first wafer component D1 to the n-th wafer component D(n) which are temporarily fixed on the circuit board C by lamination are simultaneously fixed and laminated. In the present embodiment, the three-layered wafer component D is laminated. However, the present invention is not limited thereto, and four or more layers may be laminated.

積層安裝於電路基板C上之晶片零件D存在如下傾向：因來自晶片零件D自身之散熱量增大，故正式壓接用頭19側與吸附台14b側(電路基板C側)之溫差變大。然而，安裝裝置1由絕熱構件15支持電路基板C，從而抑制了熱自被加熱之晶片零件D向吸附台14b之傳導，因此可縮小正式壓接用頭19側與電路基板C側之溫差。 The wafer component D which is laminated on the circuit board C has a tendency to increase in temperature due to an increase in the amount of heat radiation from the wafer component D itself, so that the temperature difference between the side of the main pressure bonding head 19 and the side of the adsorption stage 14b (the side of the circuit board C) becomes large. . However, since the mounting device 1 supports the circuit board C by the heat insulating member 15, the conduction of heat from the heated wafer component D to the suction table 14b is suppressed, so that the temperature difference between the side of the main pressure bonding head 19 and the circuit board C side can be reduced.

再者，於本實施形態中，暫時壓接裝置2中之暫時壓接用加熱器8之暫時壓接溫度Tt以成為固定值之方式控制，但亦可設定為於晶片零件D之加壓前使暫時壓接用加熱器8之溫度上升而改變NCF之黏度之構成。又，於正式壓接裝置12中具有位置資訊取得用之正式壓接用圖像識別裝置22，但亦可設為藉由使用較電路基板C上之晶片尺寸大之正式壓接用附接件21而無需使用正式壓接用圖像識別裝置22進行位置對準之構成。於本實施形態中，具有藉由正式壓接用載台14之移動機構，但並不限定於此。 Further, in the present embodiment, the temporary pressure contact temperature Tt of the temporary pressure bonding heater 8 in the temporary pressure bonding device 2 is controlled so as to be a fixed value, but may be set before the pressing of the wafer component D. The temperature of the temporary pressure bonding heater 8 is raised to change the viscosity of the NCF. Further, the main pressure bonding device 12 includes the image forming device 22 for the final pressure contact for obtaining the position information. However, it is also possible to use the final pressure bonding attachment having a larger wafer size on the circuit board C. 21, it is not necessary to use the image forming apparatus 22 for the final crimping to perform the alignment. In the present embodiment, the moving mechanism by the final pressure bonding stage 14 is provided, but the present invention is not limited thereto.

13‧‧‧正式壓接用基台 13‧‧‧Formal crimping abutment

14‧‧‧正式壓接用載台 14‧‧‧Formal crimping station

14a‧‧‧驅動單元 14a‧‧‧Drive unit

14b‧‧‧吸附台 14b‧‧‧Adsorption station

14c‧‧‧吸引通路 14c‧‧‧Attraction pathway

15‧‧‧絕熱構件 15‧‧‧Insulation components

15a‧‧‧凸面 15a‧‧ ‧ convex

C‧‧‧電路基板 C‧‧‧ circuit board

D‧‧‧晶片零件 D‧‧‧ wafer parts

Claims (8)

一種安裝裝置，其係對晶片零件進行加熱及加壓而將其連接於配置於載台之特定位置之電路基板者，且於與配置於載台之電路基板中之晶片零件之連接位置重合之載台部分，設置有支持電路基板之絕熱構件。 A mounting device that heats and presses a wafer component and connects it to a circuit substrate disposed at a specific position of the stage, and overlaps with a connection position of the wafer component disposed in the circuit substrate of the stage The stage portion is provided with a heat insulating member that supports the circuit board. 如請求項1之安裝裝置，其中上述絕熱構件以於上述載台之下述部分與電路基板之間構成空間之方式設置，該部分係不與上述電路基板中之上述晶片零件之連接位置重合。 The mounting device of claim 1, wherein the heat insulating member is disposed to form a space between the portion of the stage and the circuit board, and the portion does not overlap with a connection position of the wafer component in the circuit board. 如請求項1或2之安裝裝置，其設置有冷卻機構，該冷卻機構係將不與上述電路基板中之上述晶片零件之連接位置重合之上述載台之部分與電路基板之間所構成之空間冷卻。 A mounting device according to claim 1 or 2, further comprising: a cooling mechanism that spaces a portion of the stage and the circuit substrate that does not overlap with a connection position of the wafer component in the circuit substrate cool down. 如請求項1至3中任一項之安裝裝置，其中於上述絕熱構件之與上述電路基板或上述載台接觸之面中之至少一面形成有凹凸。 The mounting device according to any one of claims 1 to 3, wherein at least one of the surfaces of the heat insulating member that is in contact with the circuit board or the stage is formed with irregularities. 如請求項1至4中任一項之安裝裝置，其構成為可介隔上述絕熱構件吸引上述電路基板。 The mounting device according to any one of claims 1 to 4, wherein the circuit board is attracted to the circuit board via the heat insulating member. 一種晶片零件之安裝方法，其對晶片零件進行加熱及加壓而將其連接於配置於載台之特定位置之電路基板，且包含：暫時壓接步驟，其以配置於電路基板與晶片零件之間之接著劑成為特定之暫時壓接溫度之方式進行加熱，並且以特定之暫時壓接負荷將晶片零件朝向電路基板加壓，而將晶片零件暫時壓接於電路基板；絕熱支持步驟，其藉由絕熱構件支持上述電路基板中暫時壓接有上述晶片零件之部分；及正式壓接步驟，其將接著劑及晶片零件加熱至特定之正式壓接溫度以上，並且以特定之正式壓接負荷將晶片零件朝向電路 基板加壓。 A method of mounting a wafer component, wherein the wafer component is heated and pressurized to be connected to a circuit substrate disposed at a specific position of the stage, and includes: a temporary crimping step disposed on the circuit substrate and the wafer component The intermediate adhesive is heated in such a manner as to be a specific temporary crimping temperature, and the wafer component is pressed toward the circuit substrate with a specific temporary crimping load, and the wafer component is temporarily crimped to the circuit substrate; the heat insulating support step is borrowed Supporting, by the heat insulating member, a portion of the circuit board in which the wafer component is temporarily crimped; and a final pressure bonding step of heating the adhesive and the wafer component to a specific formal crimping temperature or higher, and applying a specific formal crimping load Wafer parts facing the circuit The substrate is pressurized. 如請求項6之安裝方法，其包含積層步驟，該積層步驟係於上述暫時壓接步驟中，將晶片零件進而重疊而暫時壓接於連接在上述電路基板之上述晶片零件。 The mounting method of claim 6, comprising the step of laminating, wherein the step of laminating is further performed by laminating the wafer components to be temporarily bonded to the wafer component connected to the circuit board. 如請求項6或7之安裝方法，其中上述接著材料為熱固性接著劑膜，於上述暫時壓接步驟中，進行加熱直至接著劑成為特定之黏度之暫時壓接溫度為止，於上述正式壓接步驟中，進行加熱直至成為接著劑之硬化溫度以上之正式壓接溫度為止。 The mounting method according to claim 6 or 7, wherein the adhesive material is a thermosetting adhesive film, and in the temporary pressure bonding step, heating is performed until the adhesive becomes a temporary pressure bonding temperature of a specific viscosity, in the above-mentioned formal pressure bonding step. In the heating, it is heated until it becomes the final crimping temperature of the curing temperature of the adhesive.
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