TW201639654A - Angled LIFT jetting - Google Patents

Angled LIFT jetting Download PDF

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Publication number
TW201639654A
TW201639654A TW105101749A TW105101749A TW201639654A TW 201639654 A TW201639654 A TW 201639654A TW 105101749 A TW105101749 A TW 105101749A TW 105101749 A TW105101749 A TW 105101749A TW 201639654 A TW201639654 A TW 201639654A
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Taiwan
Prior art keywords
donor
substrate
facets
donor film
droplets
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TW105101749A
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Chinese (zh)
Inventor
麥可 沙諾
茲維 寇特勒
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奧寶科技有限公司
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Publication of TW201639654A publication Critical patent/TW201639654A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/34Laser welding for purposes other than joining
    • B23K26/342Build-up welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y30/00Apparatus for additive manufacturing; Details thereof or accessories therefor
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/048Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225Oblique incidence of vaporised material on substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/18Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/30Organic material
    • B23K2103/42Plastics

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

An apparatus for material deposition on an acceptor surface includes a transparent donor substrate having opposing first and second surfaces, such that at least a part of the second surface is not parallel to the acceptor surface, and including a donor film on the second surface. The apparatus additionally includes an optical assembly, which is configured to direct a beam of radiation to pass through the first surface of the donor substrate and impinge on the donor film at a location on the part of the second surface that is not parallel to the acceptor surface, so as to induce ejection of droplets of molten material from the donor film onto the acceptor surface.

Description

斜角雷射誘發向前轉印(LIFT)噴射裝置 Angled laser induced forward transfer (LIFT) injection device

本發明大體上係關於雷射直寫(laser direct writing),且尤其關於用於雷射誘發向前轉印噴射的方法及系統。 The present invention is generally directed to laser direct writing, and more particularly to methods and systems for laser induced forward transfer injection.

雷射誘發向前轉印(Laser-Induced Forward Transfer;LIFT)為一種用於直接印刷各種材料,諸如金屬及聚合物的技術。LIFT提供高印刷品質,然而高級電子器件包含難以均一塗佈的三維(3D)圖案。先前技術之實例如下提供。 Laser-Induced Forward Transfer (LIFT) is a technology for direct printing of various materials such as metals and polymers. LIFT offers high print quality, yet advanced electronics contain three-dimensional (3D) patterns that are difficult to uniformly coat. Examples of prior art are provided below.

頒予Duignan之美國專利6,792,326(其揭示內容以引用之方式併入本文中)描述一種用於小型結構製造的材料傳遞系統,其具有基板、具有沈積層的材料載體及朝向材料載體元件的雷射光束。該系統以相加操作模式或相減操作模式操作,使得當改變操作模式時工件不必自工具移除。 A material transfer system for the fabrication of small structures having a substrate, a material carrier having a deposited layer, and a laser facing the material carrier member is described in U.S. Patent No. 6,792,326, the disclosure of which is incorporated herein by reference. beam. The system operates in an additive mode of operation or a subtractive mode of operation such that the workpiece does not have to be removed from the tool when the mode of operation is changed.

頒予Auyeung等人之美國專利6,805,918(其揭示內容以引用之方式併入本文中)描述一種用於雷射轉印及流變流體之沈積的方法,其中雷射能量打在包含流變流體之目標基板上,引起流變流體之一部分蒸發,且推動未蒸發流變流體至接收基板上。 A method for laser transfer and deposition of a rheological fluid is described in U.S. Patent No. 6,805,918, the disclosure of which is incorporated herein by reference. On the target substrate, a portion of the rheological fluid is caused to evaporate and the non-evaporating rheological fluid is pushed onto the receiving substrate.

頒予Huang之美國專利7,277,770(其揭示內容以引用之方式併入本文中)描述一種根據電腦輔助設計(CAD)於微電子器件之基板表面上製造所需電路組件的直寫方法及裝置。 A direct writing method and apparatus for fabricating a desired circuit component on a substrate surface of a microelectronic device in accordance with computer aided design (CAD) is described in U.S. Patent No. 7,277,770, the disclosure of which is incorporated herein by reference.

頒予Babiarz等人之美國專利申請公開案2005/0095367(其揭示內容以引用之方式併入本文中)描述一種將黏性材料非接觸分配至基板表面上的方法,其使用具有噴嘴的噴射閥,該噴嘴引導該黏性材料以不垂直於該基板表面之噴射方向流動。不垂直噴射方向導致在基板上產生減少之潤濕面積的小滴。 U.S. Patent Application Publication No. 2005/0095,367, the disclosure of which is incorporated herein by reference in its entirety, the entire entire entire entire entire entire entire entire entire entire entire entire entire disclosure The nozzle directs the viscous material to flow in a direction that is not perpendicular to the surface of the substrate. The non-perpendicular spray direction results in droplets that produce a reduced wetted area on the substrate.

以引用之方式併入本專利申請案中之文獻視為本申請案之整體部分,除了在某種程度上在此等併入文獻中以與本發明書中明確地或隱含地描述之定義有衝突之方式對任何術語進行定義以外,僅應考慮本發明書中之定義。 The literature incorporated by reference in this patent application is hereby incorporated by reference in its entirety in its entirety in its entirety in the extent of the extent of the extent In addition to the definition of any term in a conflicting manner, only the definitions in this book should be considered.

本文所述之本發明之一實施例提供一種用於在受體表面上沈積材料之裝置,其包括具有對置第一及第二表面之透明供體基板,使得該第二表面之至少一部分不平行於該受體表面,且該透明供體基板包括在該第二表面上之供體膜。該裝置另外包括光學裝配件,其經組態以引導一束輻射穿過該供體基板之第一表面,且撞擊在不平行於該受體表面之該第二表面部分上之位置處的該供體膜上,以誘發熔融材料小滴自該供體膜噴出至該受體表面上。 One embodiment of the invention described herein provides an apparatus for depositing a material on a surface of a receptor comprising a transparent donor substrate having opposing first and second surfaces such that at least a portion of the second surface is Parallel to the receptor surface, and the transparent donor substrate includes a donor film on the second surface. The apparatus additionally includes an optical assembly configured to direct a beam of radiation through the first surface of the donor substrate and impinging at a location non-parallel to the second surface portion of the receptor surface On the donor film, droplets of molten material are induced to eject from the donor film onto the surface of the receptor.

在一些實施例中,該第二表面包括週期性結構。在其他實施例中,該第二表面包括多重小面化結構(multi-faceted structure)。在又其他實施例中,該第二表面包括以對置角度定向且塗佈有不同各別供體膜的第一及第二小面。在替代實施例中,該第二表面包括第一及第二小面,其中僅該第一小面塗佈有該供體膜。在一實施例中,該第二表面包括彎曲結構。 In some embodiments, the second surface comprises a periodic structure. In other embodiments, the second surface comprises a multi-faceted structure. In still other embodiments, the second surface includes first and second facets oriented at opposing angles and coated with different respective donor films. In an alternative embodiment, the second surface includes first and second facets, wherein only the first facet is coated with the donor film. In an embodiment, the second surface comprises a curved structure.

根據本發明之一實施例另外提供一種用於材料沈積的裝置,其包括具有對置第一及第二表面之透明供體基板,使得該第二表面之至少一部分為非平面的,且該透明供體基板包括在該第二表面之非平面 部分上之供體膜。該裝置另外包括光學裝配件,其經組態以引導一束輻射穿過該供體基板之第一表面,且撞擊在該第二表面之非平面部分上之位置處的該供體膜上,以誘發熔融材料小滴自該供體膜噴出至受體表面上。 There is further provided, in accordance with an embodiment of the present invention, an apparatus for material deposition, comprising a transparent donor substrate having opposing first and second surfaces such that at least a portion of the second surface is non-planar and the transparent The donor substrate includes a non-planar surface on the second surface Part of the donor film. The apparatus additionally includes an optical assembly configured to direct a beam of radiation through the first surface of the donor substrate and impinging on the donor film at a location on the non-planar portion of the second surface, A droplet of molten material is induced to eject from the donor film onto the surface of the receptor.

根據本發明之一實施例另外提供一種用於材料沈積的方法,其包括提供具有對置第一及第二表面且在該第二表面上具有以對置角度定向之第一及第二小面的透明供體基板,且該透明供體基板包括在該等第一及第二小面上之供體膜。供體基板接近受體基板置放,其中該第二表面面向受體基板。一束輻射經引導以穿過該供體基板之第一表面,且撞擊在回應於該第二表面之第一及第二小面選擇之位置處的該供體膜上,以誘發熔融材料小滴自該等第一及第二小面上之供體膜噴出至該受體基板上。 A method for material deposition is further provided in accordance with an embodiment of the present invention, comprising providing first and second facets having opposing first and second surfaces and having opposite angles oriented on the second surface a transparent donor substrate, and the transparent donor substrate includes a donor film on the first and second facets. The donor substrate is placed proximate to the acceptor substrate, wherein the second surface faces the acceptor substrate. a beam of radiation is directed through the first surface of the donor substrate and impinging on the donor film at a location selected in response to the first and second facets of the second surface to induce a small molten material A donor film dripping from the first and second facets is ejected onto the acceptor substrate.

根據本發明之一實施例進一步提供一種用於材料沈積的方法,其包括提供具有對置第一及第二表面且在該第二表面上具有供體膜的透明供體基板。該供體基板接近受體基板之受體表面置放,其中該第二表面面向該受體基板,且相對於該受體表面以傾斜角度,亦即以非垂直角度定向。一束輻射經引導以穿過該供體基板之第一表面,且在該第二表面以該傾斜角度定向時撞擊在該供體膜上,以誘發熔融材料小滴自該供體膜噴出至該受體表面上。 A method for material deposition according to an embodiment of the present invention further includes providing a transparent donor substrate having opposing first and second surfaces and having a donor film on the second surface. The donor substrate is disposed proximate to a receptor surface of the acceptor substrate, wherein the second surface faces the acceptor substrate and is oriented at an oblique angle, ie, at a non-perpendicular angle, relative to the surface of the acceptor. A beam of radiation is directed through the first surface of the donor substrate and impinges on the donor film when the second surface is oriented at the oblique angle to induce droplets of molten material to be ejected from the donor film to The receptor is on the surface.

結合圖式自本發明實施例之以下詳細描述,將更全面理解本發明。 The invention will be more fully understood from the following detailed description of embodiments of the invention.

10‧‧‧印刷及直寫裝置 10‧‧‧Printing and writing device

11‧‧‧使用者 11‧‧‧Users

12‧‧‧電子電路 12‧‧‧Electronic circuits

13‧‧‧雷射 13‧‧‧Laser

14‧‧‧安裝表面 14‧‧‧Installation surface

15‧‧‧光學器件 15‧‧‧Optical devices

16‧‧‧光學裝配件/靜態裝配件 16‧‧‧Optical Assembly/Static Assembly

17‧‧‧供體基板 17‧‧‧donor substrate

18‧‧‧供體膜 18‧‧‧ donor film

19‧‧‧供體 19‧‧‧ Donor

20‧‧‧置放裝配件 20‧‧‧Placement Accessories

21A‧‧‧第二(下部)表面 21A‧‧‧second (lower) surface

21B‧‧‧下部表面 21B‧‧‧lower surface

21C‧‧‧下部表面 21C‧‧‧lower surface

21D‧‧‧下部表面 21D‧‧‧lower surface

21E‧‧‧下部表面 21E‧‧‧lower surface

22A‧‧‧非平面LIFT供體 22A‧‧‧Non-planar LIFT donor

22B‧‧‧非平面LIFT供體 22B‧‧‧Non-planar LIFT donor

22C‧‧‧非平面LIFT供體 22C‧‧‧Non-planar LIFT donor

22D‧‧‧非平面LIFT供體 22D‧‧‧Non-planar LIFT donor

22E‧‧‧非平面LIFT供體 22E‧‧‧Non-planar LIFT donor

23‧‧‧操作員終端機 23‧‧‧Operator terminal

23A‧‧‧平面第一(上部)表面 23A‧‧‧Flat first (upper) surface

23B‧‧‧上部表面 23B‧‧‧ upper surface

23C‧‧‧上部表面 23C‧‧‧ upper surface

23D‧‧‧上部表面 23D‧‧‧ upper surface

23E‧‧‧平面上部表面 23E‧‧‧Flat upper surface

24‧‧‧基板 24‧‧‧Substrate

25‧‧‧結構化層 25‧‧‧Structural layer

25A‧‧‧結構 25A‧‧‧ structure

25B‧‧‧結構 25B‧‧‧ structure

25C‧‧‧結構 25C‧‧‧ structure

25D‧‧‧結構 25D‧‧‧ structure

25E‧‧‧結構 25E‧‧‧ structure

26‧‧‧實質上類似小面 26‧‧‧ Substantially similar to small noodles

26M‧‧‧材料 26M‧‧‧Materials

27‧‧‧控制單元 27‧‧‧Control unit

28‧‧‧雷射光束 28‧‧‧Laser beam

29‧‧‧角度 29‧‧‧ Angle

30‧‧‧熔融材料小滴 30‧‧‧Melted droplets of molten material

31‧‧‧箭頭 31‧‧‧ arrow

32‧‧‧實質上類似小面 32‧‧‧ Substantially similar to small noodles

33A‧‧‧受體表面/頂部表面 33A‧‧‧Receptor surface/top surface

34‧‧‧處理器 34‧‧‧ Processor

35A‧‧‧基底表面 35A‧‧‧Base surface

36‧‧‧顯示器 36‧‧‧ display

40‧‧‧實質上類似小面 40‧‧‧ Substantially similar to small noodles

41‧‧‧箭頭 41‧‧‧ arrow

42‧‧‧實質上類似小面 42‧‧‧ Substantially similar to small noodles

43‧‧‧箭頭 43‧‧‧ arrow

50‧‧‧實質上類似小面 50‧‧‧ Substantially similar to small noodles

51‧‧‧箭頭 51‧‧‧ arrow

52‧‧‧實質上類似小面 52‧‧‧ Substantially similar to small noodles

53‧‧‧箭頭 53‧‧‧ arrow

54‧‧‧實質上類似小面 54‧‧‧ Substantially similar to small noodles

55‧‧‧箭頭 55‧‧‧ arrow

62‧‧‧實質上類似小面 62‧‧‧ Substantially similar to small noodles

64‧‧‧實質上類似小面 64‧‧‧ Substantially similar to small noodles

66‧‧‧傾斜角 66‧‧‧Tilt angle

68‧‧‧箭頭 68‧‧‧ arrow

70‧‧‧箭頭 70‧‧‧ arrow

71‧‧‧彎曲結構/彎曲元件 71‧‧‧Bend structure / bending element

72‧‧‧箭頭 72‧‧‧ arrow

73‧‧‧曲率半徑 73‧‧‧ radius of curvature

74‧‧‧箭頭 74‧‧‧ arrow

76‧‧‧箭頭 76‧‧‧ arrow

77‧‧‧平坦下部表面 77‧‧‧flat lower surface

79‧‧‧間隙 79‧‧‧ gap

D‧‧‧間隙寬度 D‧‧‧ gap width

h‧‧‧厚度 H‧‧‧thickness

L‧‧‧寬度 L‧‧‧Width

θe‧‧‧噴出角度 θ e ‧‧‧spray angle

圖1為根據本發明之一實施例用於在基板上直寫之系統的示意性立體說明圖;圖2為根據本發明之一實施例展示圖1之系統細節的示意性側視圖; 圖3至圖6為根據本發明之實施例展示非平面雷射誘發向前轉印(LIFT)供體之細節的示意性截面圖;及圖7為根據本發明之實施例展示不平行於受體基板之非平面LIFT供體之細節的示意性截面圖。 1 is a schematic perspective view of a system for direct writing on a substrate in accordance with an embodiment of the present invention; and FIG. 2 is a schematic side elevational view showing the details of the system of FIG. 1 in accordance with an embodiment of the present invention; 3 through 6 are schematic cross-sectional views showing details of a non-planar laser induced forward transfer (LIFT) donor in accordance with an embodiment of the present invention; and FIG. 7 is a diagram showing non-parallelism in accordance with an embodiment of the present invention. A schematic cross-sectional view of a detail of a non-planar LIFT donor of a bulk substrate.

綜述 Review

下文中所述本發明之實施例提供增強雷射誘發向前轉印(LIFT)技術之能力及可用性的方法及裝置。藉由此等實施例提供的增強適用於包含各種類型基板之電子電路上的印刷,且尤其適用於三維(3D)結構上的印刷。所揭示技術決不受限於此等特定應用內容,然而,本文所述之實施例之態樣亦可(在細節上作必要修改後)應用於除電子電路基板以外之基板上的基於LIFT之印刷。增強包括金屬及非金屬材料兩者之印刷。 Embodiments of the invention described below provide methods and apparatus for enhancing the capabilities and usability of laser induced forward transfer (LIFT) technology. The enhancements provided by such embodiments are suitable for printing on electronic circuits containing various types of substrates, and are particularly suitable for printing on three-dimensional (3D) structures. The disclosed technology is in no way limited to such specific application content, however, the aspects of the embodiments described herein may also be applied (substantially modified in detail) to LIFT-based applications on substrates other than electronic circuit substrates. print. Enhancements include printing of both metallic and non-metallic materials.

在典型的基於LIFT之系統中,在供體表面與受體基板之間的小距離在基板上得到高印刷品質。然而,在基板上之3D結構上的印刷引起兩個挑戰:在供體表面與受體之下部表面之間的距離可能較大(在受體上得到低印刷品質)以及基板之3D結構之垂直側壁的塗層可能不良(「步階覆蓋」)。 In a typical LIFT-based system, a small distance between the donor surface and the acceptor substrate results in high print quality on the substrate. However, printing on the 3D structure on the substrate poses two challenges: the distance between the donor surface and the lower surface of the receptor may be large (low print quality at the receptor) and the vertical of the 3D structure of the substrate The coating on the sidewall may be poor ("step coverage").

下文中所述本發明之實施例藉由提供不同、新穎類型之供體結構及定向以及操作LIFT系統之對應方法來克服一些此等侷限性。在一些實施例中,透明供體基板具有對置第一及第二表面,使得該第二表面之至少一部分不平行於受體表面且包含位於其上之供體膜。光學裝配件經組態以引導一束輻射穿過供體基板之第一表面,以撞擊在不平行於受體表面之第二表面部分上之位置處的供體膜上。撞擊誘發熔融材料(諸如金屬及聚合物)之小滴自供體膜噴出至受體表面上。 Embodiments of the invention described below overcome some of these limitations by providing different, novel types of donor structures and orientations, as well as corresponding methods of operating the LIFT system. In some embodiments, the transparent donor substrate has opposing first and second surfaces such that at least a portion of the second surface is non-parallel to the receptor surface and includes a donor film thereon. The optical assembly is configured to direct a beam of radiation through the first surface of the donor substrate to impinge on the donor film at a location that is not parallel to the second surface portion of the receptor surface. Droplets of impact-induced molten material, such as metals and polymers, are ejected from the donor film onto the surface of the receptor.

在其他實施例中,第二表面包含多重小面化、週期性結構,其 中該等小面中之至少一些塗佈有供體膜。多重小面化結構包含第一實質上類似小面及第二實質上類似小面,且該等第一及第二小面以對置角度定向且塗佈有不同各別供體膜。在又其他實施例中,供體之第二表面包含不平行於基板之水平表面的第一實質上類似小面及第二實質上類似小面,以及平行於基板之水平表面但未塗佈有供體膜的第三實質上類似小面。第三小面可用於經由供體原位檢驗LIFT方法。 In other embodiments, the second surface comprises multiple facet, periodic structures, At least some of the facets are coated with a donor film. The multiple facet structure includes a first substantially similar facet and a second substantially similar facet, and the first and second facets are oriented at opposite angles and coated with different respective donor films. In still other embodiments, the second surface of the donor comprises a first substantially similar facet and a second substantially similar facet that are not parallel to the horizontal surface of the substrate, and are parallel to the horizontal surface of the substrate but are not coated The third of the donor film is substantially similar to the facet. The third facet can be used to inspect the LIFT method in situ via the donor.

在替代實施例中,第二表面包含彎曲結構。 In an alternate embodiment, the second surface comprises a curved structure.

在另一實施例中,透明供體基板具有對置第一及第二表面,使得該第二表面之至少一部分為非平面的,且該透明供體基板在該第二表面之非平面部分上具有供體膜。光學裝配件引導一束輻射穿過供體基板之第一表面,且撞擊在第二表面之非平面部分上之位置處的供體膜上,以誘發熔融材料小滴自該供體膜噴出至受體表面上。 In another embodiment, the transparent donor substrate has opposing first and second surfaces such that at least a portion of the second surface is non-planar and the transparent donor substrate is on a non-planar portion of the second surface There is a donor film. The optical assembly directs a beam of radiation through the first surface of the donor substrate and impinges on the donor film at a location on the non-planar portion of the second surface to induce droplets of molten material to be ejected from the donor film to On the surface of the receptor.

系統描述 System specification

圖1為根據本發明之一實施例用於在基板24上直寫之系統的示意性立體說明圖。此處展示之此系統及其組件僅說明本文所述之技術可實施的環境之類別。該等技術可使用其他類型之適合設備及以其他組態類似地實行。 1 is a schematic perspective illustration of a system for direct writing on a substrate 24 in accordance with an embodiment of the present invention. The system and its components shown herein are merely illustrative of the types of environments in which the techniques described herein can be implemented. These techniques can be implemented similarly using other types of suitable equipment and in other configurations.

圖1之系統建構在印刷及直寫裝置10周圍,其在安裝表面14上固持的電子電路12之基板24,諸如平板顯示器(FPD)或印刷電路板(PCB)上操作。在一般LIFT方法中,基板24亦稱為接收器或受體。術語「平板顯示器」、「FPD」、「印刷電路板」及「PCB」在本文中用於一般指不管用於沈積的基板材料及方法之類型,導電材料(諸如金屬)或非導電材料(諸如介電質及聚合物)沈積其上的任何類別之介電或金屬或半導體基板。裝置10可用於沈積新的層,諸如將金屬電路印刷於各種基板上或任何其他電子器件中。 The system of Figure 1 is constructed around a printing and writing device 10 that operates on a substrate 24 of an electronic circuit 12, such as a flat panel display (FPD) or printed circuit board (PCB), that is held on mounting surface 14. In the general LIFT method, substrate 24 is also referred to as a receiver or receptor. The terms "flat panel display", "FPD", "printed circuit board" and "PCB" are used herein generally to refer to a type of substrate material and method for deposition, a conductive material (such as a metal) or a non-conductive material (such as Dielectric and polymer) deposit any type of dielectric or metal or semiconductor substrate thereon. Device 10 can be used to deposit new layers, such as printing metal circuits on various substrates or any other electronic device.

裝置10包含光學裝配件16,其含有用於雷射誘發向前轉印(LIFT) 之雷射及光學器件。光學裝配件16及其操作參考隨附圖2描述。在一些實施例中,諸如藉由裝置10進行,例如當在PCB或FPD或任何其他適用器件上進行圖案化或層沈積時,直接印刷應用可包含可為原位(亦即在印刷製程期間監視及檢驗)、整合(亦即LIFT方法完成後即刻監視及檢驗所選裝置)或藉由獨立診斷系統的離線的其他診斷能力。 Apparatus 10 includes an optical assembly 16 for use in laser induced forward transfer (LIFT) Laser and optics. Optical assembly 16 and its operational reference are described with respect to FIG. In some embodiments, such as by device 10, such as when patterning or layer deposition on a PCB or FPD or any other suitable device, the direct printing application can include being in situ (ie, monitoring during the printing process) And inspection), integration (ie monitoring and testing of selected devices as soon as the LIFT method is completed) or other diagnostic capabilities off-line by independent diagnostic systems.

呈橋形式的置放裝配件20藉由沿著裝置10之軸進行線性移動將光學裝配件16置放在所述基板24上的相關位點上方。在其他實施例中,置放裝配件20可呈其他形式,諸如沿電路12及靜態裝配件16下方之一個(X)軸、兩個(X,Y)軸或三個(X,Y,Z)軸的移動平台。如下所述,控制單元27控制光學及置放裝配件之操作,且執行其他功能,諸如溫度控制,以執行所需檢驗、印刷、圖案化及/或其他製造及修復操作。 The placement assembly 20 in the form of a bridge places the optical assembly 16 over the associated site on the substrate 24 by linear movement along the axis of the device 10. In other embodiments, the placement assembly 20 can take other forms, such as one (X) axis, two (X, Y) axes, or three (X, Y, Z) along the circuit 12 and below the static assembly 16. The axis of the mobile platform. As described below, control unit 27 controls the operation of the optics and placement assembly and performs other functions, such as temperature control, to perform the required inspection, printing, patterning, and/or other manufacturing and repair operations.

通常,控制單元27與操作員終端機23通信,該操作員終端機包含包括處理器34及顯示器36以及使用者介面及軟體的通用計算機。 Typically, control unit 27 is in communication with operator terminal 23, which includes a general purpose computer including processor 34 and display 36, as well as a user interface and software.

圖2為根據本發明之一實施例展示裝置10,且尤其光學裝配件16之細節的示意性側視圖。雷射13發射脈衝式輻射,該脈衝式輻藉由光學器件15聚焦。雷射可包含例如具有倍頻輸出的脈衝式Nd:YAG雷射,且該雷射之脈衝幅度可宜藉由控制單元27控制。(控制單元27亦可經組態(雖然可能利用不平凡方式)以控制脈衝持續時間。)光學器件15可類似地控制以便調節由雷射光束形成的焦點之位置及尺寸。 2 is a schematic side elevational view of the detail of the display device 10, and particularly the optical assembly 16, in accordance with an embodiment of the present invention. The laser 13 emits pulsed radiation that is focused by the optics 15. The laser may comprise, for example, a pulsed Nd:YAG laser with a multiplied output, and the pulse amplitude of the laser may preferably be controlled by the control unit 27. (Control unit 27 can also be configured (although it is possible to utilize a non-trivial manner) to control the pulse duration.) Optics 15 can be similarly controlled to adjust the position and size of the focus formed by the laser beam.

在一些實施例中,可使用具有不同光束特徵的其他雷射(圖中未示)或任何其他照明源(例如LED或燈)。其他雷射可以另一波長及用另一光學器件設備操作,且可用於例如表面檢驗。 In some embodiments, other lasers (not shown) or any other illumination source (such as an LED or a light) having different beam characteristics may be used. Other lasers can be operated at another wavelength and with another optics device, and can be used, for example, for surface inspection.

光學裝配件16以LIFT組態展示於圖2中。光學器件15將來自雷射13之光束聚焦至供體19上,該供體包含供體基板17,其中一或多個供體膜18沈積於基板17上。通常,基板17包含透明光學材料,諸如玻璃 或塑膠薄片或其他類型之透明基板,諸如矽晶圓或可撓性塑膠箔片。來自雷射13之光束(藉由置放裝配件20)與電路12之基板24上之所選位點對準,且供體19以自基板的所需間隙寬度D置放在該位點上方。通常,此間隙寬度為至少0.1mm,且本發明人已發現,若進行雷射光束參數之恰當選擇,則可使用0.2mm或甚至0.5mm或0.5mm以上之間隙寬度。 Optical assembly 16 is shown in Figure 2 in a LIFT configuration. The optics 15 focuses the beam from the laser 13 onto a donor body 19 comprising a donor substrate 17 in which one or more donor films 18 are deposited on the substrate 17. Typically, substrate 17 comprises a transparent optical material such as glass. Or a plastic sheet or other type of transparent substrate, such as a germanium wafer or a flexible plastic foil. The beam from the laser 13 (by placing the assembly 20) is aligned with the selected site on the substrate 24 of the circuit 12, and the donor 19 is placed above the site with the desired gap width D from the substrate. . Typically, this gap width is at least 0.1 mm, and the inventors have discovered that a gap width of 0.2 mm or even 0.5 mm or more can be used if the laser beam parameters are properly selected.

光學器件15將雷射光束經由基板17之外表面聚焦至膜18上,藉此引起熔融材料小滴自該膜噴出,跨越間隙且達至器件基板之表面上(例如達至結構化層25中)。 The optical device 15 focuses the laser beam onto the film 18 via the outer surface of the substrate 17, thereby causing droplets of molten material to be ejected from the film across the gap and onto the surface of the device substrate (eg, into the structured layer 25) ).

圖3為根據本發明之一實施例展示非平面LIFT供體22A之細節的示意性截面圖。供體22A對雷射光束28為透明的,且包含兩個表面,即通常垂直於雷射光束28且平行於基板24的平面第一(上部)表面23A及面向基板24的第二(下部)表面21A。在一實施例中,供體22A之下部表面為非平面的,且包含不平行於基板24的兩個或兩個以上小面。在圖3之實例中,供體22A之下部表面包含實質上類似小面32及實質上類似小面26。小面32通常平行於雷射28,且小面26具有斜度(梯度),且塗佈有材料26M之一或多個膜,從而形成各別材料之單層或多層堆疊。在本發明及在申請專利範圍中,採用具有平坦且平面表面的小面。 3 is a schematic cross-sectional view showing details of a non-planar LIFT donor 22A in accordance with an embodiment of the present invention. The donor 22A is transparent to the laser beam 28 and includes two surfaces, a first (upper) surface 23A that is generally perpendicular to the laser beam 28 and parallel to the plane of the substrate 24, and a second (lower) surface that faces the substrate 24. Surface 21A. In one embodiment, the lower surface of the donor 22A is non-planar and includes two or more facets that are not parallel to the substrate 24. In the example of FIG. 3, the lower surface of donor 22A includes substantially similar facets 32 and substantially similar facets 26. Facet 32 is generally parallel to laser 28, and facet 26 has a slope (gradient) and is coated with one or more films of material 26M to form a single or multiple layer stack of individual materials. In the present invention and in the scope of the patent application, facets having a flat and planar surface are employed.

在LIFT方法期間,雷射光束28提供脈衝式輻射於供體22A上。輻射穿過表面23A,且衝擊在所選小面26之供體膜上。由於所選小面不平行於基板24之受體表面33A(在此假設平行於基板之基底表面35A),因此熔融材料小滴30以角度29自供體膜噴出至基板24之受體表面33A。基板24之受體表面33A在本文中亦稱為基板之頂部表面33A。通常,小滴30之噴射係垂直於小面26,且藉由箭頭31指示。因此,儘管雷射光束28垂直於基板24,但小面26之斜度導致所說明之斜角噴射, 以使小滴30沈積於基板24上之結構25A之側壁上。如圖中所說明,結構25A具有不平行於受體表面33A(亦即不平行於基底表面35A)之表面(諸如側壁)。在下文之描述中,其他結構25B、25C、25D、25E安裝於基板24上。該等其他結構具有與本文所述之結構25A相同的性質,亦即該等結構具有不平行於基板24之基底表面的表面。 During the LIFT method, laser beam 28 provides pulsed radiation onto donor 22A. Radiation passes through surface 23A and impinges on the donor film of selected facets 26. Since the selected facets are not parallel to the receptor surface 33A of the substrate 24 (here assuming parallel to the substrate surface 35A of the substrate), the molten material droplets 30 are ejected from the donor film at an angle 29 to the receptor surface 33A of the substrate 24. The receptor surface 33A of the substrate 24 is also referred to herein as the top surface 33A of the substrate. Typically, the spray of droplets 30 is perpendicular to facet 26 and is indicated by arrow 31. Thus, although the laser beam 28 is perpendicular to the substrate 24, the slope of the facet 26 results in the illustrated bevel jet, The droplets 30 are deposited on the sidewalls of the structure 25A on the substrate 24. As illustrated in the figure, structure 25A has a surface (such as a sidewall) that is not parallel to receptor surface 33A (i.e., not parallel to substrate surface 35A). In the following description, other structures 25B, 25C, 25D, 25E are mounted on the substrate 24. These other structures have the same properties as the structures 25A described herein, that is, the structures have surfaces that are not parallel to the surface of the substrate of the substrate 24.

在圖3之實例中,小滴自經塗佈之小面噴出的角度主要藉由供體22A之設計來設置。 In the example of Figure 3, the angle at which the droplets are ejected from the coated facets is primarily set by the design of the donor 22A.

在典型LIFT方法中,在供體22A與基板24(以及結構25A)之間的小距離在基板24及結構25A上得到高印刷品質。另外,多重小面化結構以垂直於各小面的預界定所需方向提供容易的噴射,且因此實現3D結構之側壁的高塗層均一性。 In a typical LIFT process, a small distance between the donor 22A and the substrate 24 (and structure 25A) results in high print quality on the substrate 24 and structure 25A. In addition, the multiple facet structure provides for easy ejection in a predefined desired direction perpendicular to each facet and thus achieves high coating uniformity of the sidewalls of the 3D structure.

在一些實施例中,供體22A之下部表面包含週期性結構(如圖3中所示)。在其他實施例中,供體22A之下部表面之結構可具有非週期性結構,其中不同斜度之小面沿著供體22A之下部表面。亦即,結構自供體22A之中心至供體之邊緣可為不同的。舉例而言,在供體22A邊緣處的小面之傾斜角度可比在中心處的小面之角度更陡。 In some embodiments, the lower surface of donor 22A contains a periodic structure (as shown in Figure 3). In other embodiments, the structure of the lower surface of the donor 22A can have a non-periodic structure with facets of different slopes along the lower surface of the donor 22A. That is, the structure may be different from the center of the donor 22A to the edge of the donor. For example, the angle of inclination of the facets at the edges of the donor 22A may be steeper than the angle of the facets at the center.

在一替代實施例中,供體22A之下部表面可包含如將根據圖5描述的兩個以上小面。 In an alternate embodiment, the lower surface of donor 22A may comprise more than two facets as will be described in accordance with FIG.

圖4為根據本發明之一實施例展示非平面LIFT供體22B之細節的示意性截面圖。供體22B對雷射光束28(圖4中未示)為透明的。供體22B之上部表面23B平行於基板24之頂部表面33A。供體22B之下部表面21B為非平面的,且包含不平行於基板24之受體表面33A的多重小面化結構,諸如實質上類似小面40及實質上類似小面42。各小面因此具有相對於基板24之受體表面的不同斜度。在一實施例中,小面以相對於光束28之對置、不必相等的角度(例如+45°及-30°)定向。兩種小面均可塗佈有不同各別供體膜,諸如如根據圖3所述之材料26M及另 一材料。 4 is a schematic cross-sectional view showing details of a non-planar LIFT donor 22B in accordance with an embodiment of the present invention. The donor 22B is transparent to the laser beam 28 (not shown in Figure 4). The upper surface 23B of the donor 22B is parallel to the top surface 33A of the substrate 24. The lower surface 21B of the donor 22B is non-planar and includes multiple facet structures that are not parallel to the receptor surface 33A of the substrate 24, such as substantially similar to the facets 40 and substantially similar facets 42. Each facet thus has a different slope relative to the receptor surface of the substrate 24. In one embodiment, the facets are oriented opposite the beam 28, not necessarily at equal angles (e.g., +45° and -30°). Both facets can be coated with different individual donor films, such as material 26M as described in accordance with Figure 3 and another a material.

該等雙重材料結構可利用各種技術製造,諸如微影術、直接蒸發(在金屬塗層之情況下),或藉由放置各小面用不同材料塗佈之雙角度(bi-angled)(例如錐形)結構。(在一些實施例中,一些小面可保持未經塗佈的。)在LIFT操作期間,兩種材料可實質上同時噴出,例如藉由使用兩個或兩個以上平行光束。替代或另外地,高重複率雷射可經掃描以有效地實現同時噴射。同時噴出可用於在基板24上形成混合材料(例如化合物)。進一步替代或另外地,兩種材料可連續印刷以形成混合材料結構。 The dual material structures can be fabricated using a variety of techniques, such as lithography, direct evaporation (in the case of metal coatings), or bi-angled by placing different facets with different materials (eg, Tapered) structure. (In some embodiments, some facets may remain uncoated.) During LIFT operation, the two materials may be ejected substantially simultaneously, such as by using two or more parallel beams. Alternatively or additionally, high repetition rate lasers may be scanned to effectively achieve simultaneous injection. Simultaneous ejection can be used to form a mixed material (e.g., a compound) on the substrate 24. Further alternatively or additionally, the two materials can be continuously printed to form a hybrid material structure.

由於小面40及42不平行於基板24之表面,熔融材料小滴30自供體膜以一定角度(亦即圖3中之角度29)噴出至基板24之表面。在一實施例中,小面40及42均塗佈有由類似或不同材料形成的膜。在一替代實施例中,僅一個小面(例如小面40)塗佈有膜。小滴30自小面40噴出藉由箭頭41指示,且小滴30通常以垂直於表面40的角度噴出,以塗佈結構25B之左側側壁。箭頭43說明小滴30自小面42噴出,通常以垂直於小面42的噴出角度,以塗佈結構25B之右側側壁。兩種噴出亦塗佈平行於供體22B之上部表面的基板24及結構25B之頂部表面。 Since the facets 40 and 42 are not parallel to the surface of the substrate 24, the molten material droplets 30 are ejected from the donor film at an angle (i.e., the angle 29 in FIG. 3) to the surface of the substrate 24. In one embodiment, facets 40 and 42 are each coated with a film formed of a similar or different material. In an alternate embodiment, only one facet (e.g., facet 40) is coated with a film. Droplet 30 is ejected from face 40 and indicated by arrow 41, and droplet 30 is typically ejected at an angle perpendicular to surface 40 to coat the left side wall of structure 25B. Arrow 43 illustrates the droplet 30 being ejected from the facet 42, typically at a spray angle perpendicular to the facet 42 to coat the right side wall of the structure 25B. Both ejections also coat the top surface of the substrate 24 and structure 25B parallel to the upper surface of the donor 22B.

在一些實施例中,小滴30之噴出同時進行,且在各小面上不同材料之情況下,小滴30之噴出可在基板24上形成各別材料之混合膜(例如化合物或合金)。在其他實施例中,小滴30自小面40噴出在小滴30自小面42噴出之前或之後進行。在小面40及42上不同材料之情況下,小滴30之依序噴出可在基板24上形成多層結構或同一層中的混合材料結構。 In some embodiments, the ejection of droplets 30 occurs simultaneously, and in the case of different materials on each facet, the ejection of droplets 30 can form a mixed film (e.g., compound or alloy) of the respective materials on substrate 24. In other embodiments, the droplets 30 are ejected from the facets 40 before or after the droplets 30 are ejected from the facets 42. In the case of different materials on the facets 40 and 42, the droplets 30 are sequentially ejected to form a multilayer structure or a mixed material structure in the same layer on the substrate 24.

小滴之噴出角分別藉由小面40及42之斜度界定。在一些實施例中,在小面40及42上之塗佈材料為類似的,以遍及結構25B及基板24印刷同一材料。在其他實施例中,塗佈材料可為不同的,以在結構 25B及基板24上印刷混合或多層材料。 The ejection angle of the droplets is defined by the slope of the facets 40 and 42, respectively. In some embodiments, the coating materials on facets 40 and 42 are similar to print the same material throughout structure 25B and substrate 24. In other embodiments, the coating material can be different to structure Mixed or multilayer materials are printed on 25B and substrate 24.

圖5為根據本發明之一實施例展示非平面LIFT供體22C之細節的示意性截面圖。供體22C對雷射光束28(圖5中未示)為透明的。在一些實施例中,如下文中所述,供體22C可經組態以對可用於LIFT方法檢驗的另一雷射或另一照明源(諸如LED或燈)為透明的。 FIG. 5 is a schematic cross-sectional view showing details of a non-planar LIFT donor 22C in accordance with an embodiment of the present invention. The donor 22C is transparent to the laser beam 28 (not shown in Figure 5). In some embodiments, as described below, donor 22C can be configured to be transparent to another laser or another illumination source (such as an LED or light) that can be used for LIFT method verification.

供體22C之上部表面23C平行於基板24之頂部表面33A。供體22C之下部表面21C包含不平行於基板24之表面33A及35A的實質上類似小面50及實質上類似小面52,以及平行於表面33A的實質上類似小面54。 The upper surface 23C of the donor 22C is parallel to the top surface 33A of the substrate 24. The lower surface 21C of the donor 22C includes substantially similar facets 50 and substantially similar facets 52 that are not parallel to the surfaces 33A and 35A of the substrate 24, and substantially similar facets 54 that are parallel to the surface 33A.

如參考圖4所述,小面50及52在各小面上可塗佈有同一材料或不同材料。在一些實施例中,小面54不經塗佈,且在LIFT方法期間可用於原位檢驗,以監視LIFT印刷方法之品質。替代或另外地,未經塗佈之小面可用於其他檢驗應用,諸如對齊及/或對準。經由未經塗佈之小面的檢驗可使用與用於噴出相同的雷射或其他雷射(圖5中未示)或如上文所述之任何其他適合照明源(例如LED或燈)。 As described with reference to Figure 4, facets 50 and 52 may be coated with the same material or different materials on each facet. In some embodiments, facet 54 is uncoated and can be used for in situ inspection during the LIFT method to monitor the quality of the LIFT printing process. Alternatively or additionally, the uncoated facets can be used in other inspection applications, such as alignment and/or alignment. The same laser or other laser (not shown in Figure 5) or any other suitable illumination source (e.g., LED or lamp) as described above may be used for inspection via uncoated facets.

在其他實施例中,小面54可塗佈有待噴出之材料,在藉由箭頭55所示之噴出中通常垂直於基板24。自小面50及52之噴出(分別藉由箭頭51及53說明)通常分別垂直於小面50及52。箭頭51說明來自小面50之小滴30塗佈結構25C之左側側壁及頂部表面。箭頭55說明小滴30塗佈結構25C之頂部表面。箭頭53說明小滴30塗佈結構25C之右側表面。小面50及52之噴出角度主要藉由小面之各別斜度設置。 In other embodiments, the facets 54 may be coated with a material to be ejected, generally perpendicular to the substrate 24 in the ejection indicated by arrow 55. The ejection from the facets 50 and 52 (described by arrows 51 and 53, respectively) is generally perpendicular to the facets 50 and 52, respectively. Arrow 51 illustrates the left side wall and top surface of droplet 30 coating structure 25C from facet 50. Arrow 55 illustrates the top surface of droplet 30 coating structure 25C. Arrow 53 illustrates the right side surface of droplet 30 coating structure 25C. The ejection angles of the facets 50 and 52 are mainly set by the respective slopes of the facets.

圖6為根據本發明之一實施例展示非平面LIFT供體22D之細節的示意性截面圖。供體22D對雷射光束28為透明的。供體22C之上部表面23D平行於基板24之頂部表面33A。供體22D之下部表面21D包含藉由供體22D之平坦下部表面77頂部上之供體膜塗佈的一或多個彎曲結構71。各彎曲結構71具有厚度h及寬度L。結構71在本文中亦稱為元件 71。藉助於實例,四個彎曲元件71展示於圖6中,且假設各別球之部分具有相等曲率半徑73。 Figure 6 is a schematic cross-sectional view showing details of a non-planar LIFT donor 22D in accordance with an embodiment of the present invention. The donor 22D is transparent to the laser beam 28. The upper surface 23D of the donor 22C is parallel to the top surface 33A of the substrate 24. The lower surface 21D of the donor 22D includes one or more curved structures 71 coated by a donor film on top of the flat lower surface 77 of the donor 22D. Each curved structure 71 has a thickness h and a width L. Structure 71 is also referred to herein as a component 71. By way of example, four bending elements 71 are shown in Figure 6, and it is assumed that portions of the respective balls have equal radii of curvature 73.

然而,應瞭解,元件71可包含實質上任何彎曲表面,且因此例如可包含圓柱體之部分或另一彎曲實體(諸如橢球)之部分。另外,元件71可以週期性方式配置於表面21D上,或可配置為非週期性的。 However, it should be appreciated that element 71 can comprise substantially any curved surface, and thus can, for example, comprise portions of a cylinder or portions of another curved entity, such as an ellipsoid. Additionally, element 71 may be disposed on surface 21D in a periodic manner, or may be configured to be non-periodic.

通常,各元件71之寬度L實質上大於同一元件之厚度h,以當光束28衝擊在元件71上時避免該光束點失真。在一實施例中,厚度h為約100μm或100μm以下,在供體22D與表面33A之間的間隙79在200μm至300μm範圍內或300μm以上。厚度及間隙之該等值確保在供體22D與基板24之間的印刷條件為實質上均一的。 Typically, the width L of each element 71 is substantially greater than the thickness h of the same element to avoid distortion of the beam spot when the beam 28 strikes the element 71. In one embodiment, the thickness h is about 100 μm or less, and the gap 79 between the donor 22D and the surface 33A is in the range of 200 μm to 300 μm or more. These values of thickness and gap ensure that the printing conditions between donor 22D and substrate 24 are substantially uniform.

元件71之曲率及衝擊在該元件上的光束28之位置界定小滴30自元件的噴出角度θe,小滴通常垂直噴出至衝擊區域。因此,操作員可控制在彎曲供體上的光束28之位置,以達成給定小滴30的所需噴出角度從而達成在基板上的所需位置。一般而言,藉由控制光束28、供體22D及/或基板24之位置,操作員可選擇在連續範圍內任何角度的小滴30之噴出角度,且可因此改變各小滴30在表面33A及結構25D上的降落角度及降落位置。在一實施例中,根據光束28量測的噴出角度之連續範圍處於+30°與-30°之間。 The curvature of element 71 and the location of beam 28 on the element define the ejection angle θ e of droplet 30 from the element, which is typically ejected vertically into the impact region. Thus, the operator can control the position of the beam 28 on the curved donor to achieve the desired ejection angle for a given droplet 30 to achieve the desired position on the substrate. In general, by controlling the position of beam 28, donor 22D, and/or substrate 24, the operator can select the ejection angle of droplets 30 at any angle within a continuous range, and thus can change each droplet 30 at surface 33A. And the landing angle and landing position on the structure 25D. In one embodiment, the continuous range of ejection angles measured in accordance with beam 28 is between +30° and -30°.

舉例而言,當光束28衝擊在元件71(在此假設平行於表面33A)之中心上時,如箭頭72所說明,小滴30通常垂直噴出至表面33A。在此情況下,小滴塗佈表面33A或25D之頂部表面。當光束28衝擊在元件71之右側側面上時,小滴30以如箭頭74所說明之角度自供體膜噴出。在此情況下,小滴以非垂直角度(諸如圖3中所述之角度29)降落至受體表面33A或結構25D之左側側壁上。類似地,當光束28衝擊在元件71之左側上時,小滴30以與當光束衝擊在元件之右側側面上時之角度相反的角度自供體膜噴出,如由箭頭76所說明。在此情況下,小滴以 相反角度(與由箭頭74表示之實例相比)降落至受體表面33A或結構25D之右側側壁上。 For example, when beam 28 strikes the center of element 71 (here assuming parallel to surface 33A), as illustrated by arrow 72, droplet 30 is typically ejected vertically to surface 33A. In this case, the droplets coat the top surface of surface 33A or 25D. When the beam 28 strikes the right side of the element 71, the droplet 30 is ejected from the donor film at an angle as indicated by arrow 74. In this case, the droplets are dropped onto the left side wall of the receptor surface 33A or structure 25D at a non-perpendicular angle (such as the angle 29 described in Figure 3). Similarly, when the beam 28 impinges on the left side of the element 71, the droplet 30 is ejected from the donor film at an angle opposite to the angle at which the beam impinges on the right side of the element, as illustrated by arrow 76. In this case, the droplets are The opposite angle (as compared to the example represented by arrow 74) falls onto the right side wall of receptor surface 33A or structure 25D.

在緊密填充元件71中,寬度L藉由最大允許之噴出角度及元件71之厚度h指定。若θm為最大噴出角度,則元件71之寬度(針對元件球體部分)藉由以下方程式給出: In the tight packing element 71, the width L is specified by the maximum allowable discharge angle and the thickness h of the element 71. If θ m is the maximum ejection angle, the width of the element 71 (for the component sphere portion) is given by the following equation:

因此舉例而言,設置厚度h為100μm且假設最大噴出角度為30°,彎曲表面寬度L為約750μm,其實質上大於典型光點尺寸。類似考慮應用於其他緻密彎曲結構情況。 Thus, for example, the thickness h is set to 100 μm and the maximum ejection angle is assumed to be 30°, and the curved surface width L is about 750 μm, which is substantially larger than the typical spot size. Similar considerations apply to other dense curved structures.

圖7為根據本發明之實施例展示不平行於基板24之表面33A及35A的非平面LIFT供體22E之細節的示意性截面圖供體22E以傾斜角66傾斜,其在供體22E之平面上部表面23E與平行於基板24之表面33A及35A的水平線之間量測。表面23E充當供體22E之界定平面表面,且傾斜角66在表面23E與平行於基板24之表面33A、表面35A的線之間。 7 is a schematic cross-sectional view showing details of a non-planar LIFT donor 22E that is not parallel to the surfaces 33A and 35A of the substrate 24 in accordance with an embodiment of the present invention. The donor 22E is inclined at an oblique angle 66 that is planed on the donor 22E. The upper surface 23E is measured between a horizontal line parallel to the surfaces 33A and 35A of the substrate 24. Surface 23E acts as a defined planar surface for donor 22E, and slope angle 66 is between surface 23E and a line parallel to surface 33A, surface 35A of substrate 24.

供體22E對雷射光束28為透明的,且包含藉由供體膜塗佈且以傾斜角度面向基板24的下部表面21E。結構25E位於基板24上,且通常具有如圖7中所示之三維(3D)結構。 The donor 22E is transparent to the laser beam 28 and includes a lower surface 21E that is coated by the donor film and faces the substrate 24 at an oblique angle. Structure 25E is located on substrate 24 and typically has a three dimensional (3D) structure as shown in FIG.

在一實施例中,裝置10之使用者11(圖1)識別結構25E之3D結構上的形貌特徵,且置放供體22E,使得供體之下部表面以傾斜(亦即非垂直)於表面的角度朝向3D結構之表面。一旦供體22E及基板24經置放,使用者引導光束28撞擊在供體22E上,以使材料自供體膜通常垂直於供體22E之下部表面噴出至3D結構上。舉例而言,若角度66等於10°,且小滴30垂直於供體22E之下部表面噴出,則該等小滴將以相對於平行於基板24之水平線的100°噴出,且將以相對於基板24之表面33A量測的角度80°(90°-10°)降落在結構25E之頂部表面上。 In one embodiment, the user 11 (FIG. 1) of the device 10 identifies the topographical features on the 3D structure of the structure 25E and places the donor 22E such that the lower surface of the donor is tilted (ie, non-perpendicular) The angle of the surface faces the surface of the 3D structure. Once the donor 22E and substrate 24 have been placed, the user directs the beam 28 onto the donor 22E such that material is ejected from the donor film generally perpendicular to the lower surface of the donor 22E onto the 3D structure. For example, if the angle 66 is equal to 10° and the droplet 30 is ejected perpendicular to the lower surface of the donor 22E, the droplets will be ejected at 100° relative to the horizontal line parallel to the substrate 24 and will be relative to The angle 80° (90° - 10°) measured by the surface 33A of the substrate 24 landed on the top surface of the structure 25E.

在一些實施例中,供體22E之表面21E包含通常塗佈有供體膜的多個小面,諸如小面62及64。在其他實施例中,表面21E為平面的(亦即不包含小面),且塗佈有供體膜。 In some embodiments, surface 21E of donor 22E includes a plurality of facets, such as facets 62 and 64, that are typically coated with a donor film. In other embodiments, surface 21E is planar (ie, does not include facets) and is coated with a donor film.

在LIFT方法期間,雷射光束28發射脈衝式輻射至供體22E上。輻射穿過表面23E,且衝擊在供體22E之下部表面上的供體膜上,以誘發熔融材料小滴自供體膜噴出至受體表面上,其包含圖7之實例中的基板24之表面33A部分及結構25E之上部表面部分。 During the LIFT method, the laser beam 28 emits pulsed radiation onto the donor 22E. Radiation passes through surface 23E and impinges on the donor film on the surface of the lower portion of donor 22E to induce droplets of molten material to be ejected from the donor film onto the surface of the receptor, which includes the surface of substrate 24 in the example of FIG. Part 33A and the upper surface portion of structure 25E.

在供體22E之平面(非小面化)表面21E之第一種情況中,自供體膜的噴出角度跨供體為連續的,且因此光束28以角度90°+角度66朝向結構25E噴出小滴。因此,小滴66以非垂直角度降落在基板24及結構25E之頂部表面上。如以上實例中所述,角度66等於10°,且因此自供體22E之噴出角度為100°,且在結構25E之頂部表面上的降落角度為80°。在小滴降落在垂直於基板24之表面的結構25E之側壁上之情況下,降落角度相對於側壁之表面將通常為10°。 In the first case of the planar (non-minimized) surface 21E of the donor 22E, the ejection angle from the donor film is continuous across the donor, and thus the beam 28 is ejected toward the structure 25E at an angle of 90° + an angle 66. drop. Thus, the droplets 66 land on the top surface of the substrate 24 and structure 25E at a non-perpendicular angle. As described in the above example, the angle 66 is equal to 10°, and thus the ejection angle from the donor 22E is 100°, and the drop angle on the top surface of the structure 25E is 80°. In the case where the droplets land on the side walls of the structure 25E that is perpendicular to the surface of the substrate 24, the angle of fall will typically be 10 relative to the surface of the sidewalls.

在第二種情況(展示於圖7中)中,供體22E之下部表面包含實質上類似小面62及實質上類似小面64。在此實施例中,在LIFT方法期間,光束28穿過表面23E且衝擊在小面62之供體膜上,導致小滴30朝向結構25E之右側側壁及水平頂部表面噴出(由箭頭68表示)。在此情況下,噴出及降落角度視角度66及小面62相對於表面21E之斜度角度而定。 In the second case (shown in Figure 7), the lower surface of donor 22E includes substantially similar facets 62 and substantially similar facets 64. In this embodiment, during the LIFT method, beam 28 passes through surface 23E and impinges on the donor film of facet 62, causing droplet 30 to be ejected toward the right side wall and horizontal top surface of structure 25E (indicated by arrow 68). . In this case, the discharge and landing angles are determined by the angle of view 66 and the angle of inclination of the facet 62 relative to the surface 21E.

舉例而言,若角度66等於10°,小面62相對於供體22E之下部表面之角度為60°且噴出垂直於小面62之表面,則自小面62噴出之角度(箭頭68)等於10°+60°+90°,其相對於供體22E之下部表面等於160°。小滴30在結構25E之頂部表面上的降落角度將為20°(90°-70°),且在結構25E之左側垂直側壁上的降落角度將為70°。 For example, if the angle 66 is equal to 10° and the angle of the facet 62 relative to the lower surface of the donor 22E is 60° and the surface perpendicular to the facet 62 is ejected, the angle ejected from the facet 62 (arrow 68) is equal to 10°+60°+90°, which is equal to 160° with respect to the lower surface of the donor 22E. The drop angle of the droplet 30 on the top surface of the structure 25E will be 20° (90°-70°) and the drop angle on the left vertical side wall of the structure 25E will be 70°.

類似地,光束28穿過供體22E之上部表面,且衝擊在小面64之供 體膜上,導致小滴30朝向結構25E之右側側壁及水平表面噴出(由箭頭70表示)。 Similarly, beam 28 passes through the upper surface of donor 22E and impacts on facet 64 On the body membrane, droplets 30 are caused to eject toward the right side wall and horizontal surface of structure 25E (indicated by arrow 70).

在兩個實施例中,非零傾斜角66在比平行供體受體組態更接近於基板24的供體22E上均提供特定位置。在供體與受體之間的更小距離通常在LIFT方法中導致高印刷品質。 In both embodiments, the non-zero tilt angle 66 provides a particular location on the donor 22E that is closer to the substrate 24 than the parallel donor acceptor configuration. Smaller distances between the donor and the acceptor typically result in high print quality in the LIFT process.

在圖7中,供體22E之左側連同小面62及64由於傾斜角66低於右側,與先前技術系統相比可在供體22E上的膜與結構25E之間提供更短距離(以在此等較短距離下在結構25E上提供較高印刷品質之小滴30)。如圖7中所示,傾斜之實施例在跨結構25E非均一高度之情況下提供高印刷效能,其中結構25E之右側高於該結構之左側。 In Figure 7, the left side of the donor 22E along with the facets 62 and 64 provides a shorter distance between the film on the donor 22E and the structure 25E due to the lower angle of inclination 66 than the prior art system. These shorter distances provide droplets 30 of higher print quality on structure 25E. As shown in Figure 7, the tilted embodiment provides high printing performance across a non-uniform height of structure 25E with the right side of structure 25E being higher than the left side of the structure.

如圖7中所說明,非零傾斜角66與供體22E之下部表面上的多重小面化結構之組合提供靈活性以根據結構25E之特定形貌調整LIFT方法。舉例而言,在圖7中最高3D結構在結構25E之右側中,且因此供體22E左側向下傾斜。在其中3D結構在結構25E之左側較高的相反情況中,供體22E右側可向下傾斜,其意謂傾斜角66與圖7中所展示之角度相反。舉例而言,角度66非10°,而為-10°(或170°)。可調適傾斜角與供體之多重小面化結構之組合提供靈活性,其可用於在供體22E之表面21E與結構25E之間達成較小距離,且因此提供針對結構25E之任何類型之3D特徵的高印刷品質。 As illustrated in Figure 7, the combination of the non-zero tilt angle 66 with the multiple facet structures on the lower surface of the donor 22E provides flexibility to adjust the LIFT method in accordance with the particular topography of the structure 25E. For example, the highest 3D structure in Figure 7 is in the right side of structure 25E, and thus donor 22E is tilted to the left. In the opposite case where the 3D structure is higher on the left side of the structure 25E, the right side of the donor 22E can be tilted downward, which means that the tilt angle 66 is opposite to the angle shown in FIG. For example, angle 66 is not 10° but is -10° (or 170°). The combination of an adjustable tilt angle and a multi-faceted structure of the donor provides flexibility that can be used to achieve a smaller distance between the surface 21E of the donor 22E and the structure 25E, and thus provides any type of 3D for the structure 25E. High print quality of features.

應瞭解,上述實施例藉助於實例引用,且本發明不限於上文特定展示及描述之內容。確切而言,本發明之範疇包括上文所述之各種特徵之組合及子組合,以及熟習此項技術者在閱讀以上描述時將想到且未在先前技術中揭示的其變化及修改。 It should be understood that the above-described embodiments are cited by way of example, and the invention is not limited to the particulars shown and described. Rather, the scope of the present invention includes the combinations and sub-combinations of the various features described above, as well as variations and modifications thereof which are apparent to those skilled in the art in light of the above description.

21A‧‧‧第二(下部)表面 21A‧‧‧second (lower) surface

22A‧‧‧非平面LIFT供體 22A‧‧‧Non-planar LIFT donor

23A‧‧‧平面第一(上部)表面 23A‧‧‧Flat first (upper) surface

24‧‧‧基板 24‧‧‧Substrate

25A‧‧‧結構 25A‧‧‧ structure

26‧‧‧實質上類似小面 26‧‧‧ Substantially similar to small noodles

26M‧‧‧材料 26M‧‧‧Materials

28‧‧‧雷射光束 28‧‧‧Laser beam

29‧‧‧角度 29‧‧‧ Angle

30‧‧‧熔融材料小滴 30‧‧‧Melted droplets of molten material

31‧‧‧箭頭 31‧‧‧ arrow

32‧‧‧實質上類似小面 32‧‧‧ Substantially similar to small noodles

33A‧‧‧受體表面/頂部表面 33A‧‧‧Receptor surface/top surface

35A‧‧‧基底表面 35A‧‧‧Base surface

Claims (22)

一種用於在受體表面上沈積材料之裝置,其包含:具有對置第一及第二表面之透明供體基板,使得該第二表面之至少一部分不平行於該受體表面,且該透明供體基板包含在該第二表面上之供體膜;及光學裝配件,其經組態以引導一束輻射穿過該供體基板之第一表面,且撞擊在不平行於該受體表面之該第二表面部分上之位置處的該供體膜上,以誘發熔融材料小滴自該供體膜噴出至該受體表面上。 An apparatus for depositing a material on a surface of a receptor, comprising: a transparent donor substrate having opposing first and second surfaces such that at least a portion of the second surface is non-parallel to the surface of the receptor, and the transparent a donor substrate comprising a donor film on the second surface; and an optical assembly configured to direct a beam of radiation through the first surface of the donor substrate and impinging on a surface that is not parallel to the receptor The donor film is positioned on the second surface portion to induce droplets of molten material to be ejected from the donor film onto the surface of the receptor. 如請求項1之裝置,其中該第二表面包含週期性結構。 The device of claim 1, wherein the second surface comprises a periodic structure. 如請求項1之裝置,其中該第二表面包含多重小面化結構。 The device of claim 1, wherein the second surface comprises a plurality of faceted structures. 如請求項3之裝置,其中該第二表面包含以對置角度定向且塗佈有不同各別供體膜的第一及第二小面。 The device of claim 3, wherein the second surface comprises first and second facets oriented at opposite angles and coated with different respective donor films. 如請求項3之裝置,其中該第二表面包含第一及第二小面,且其中僅該第一小面塗佈有該供體膜。 The device of claim 3, wherein the second surface comprises first and second facets, and wherein only the first facet is coated with the donor film. 一種用於材料沈積之裝置,其包含:具有對置第一及第二表面之透明供體基板,使得該第二表面之至少一部分為非平面的,且該透明供體基板包含在該第二表面之非平面部分上之供體膜;及光學裝配件,其經組態以引導一束輻射穿過該供體基板之第一表面,且撞擊在該第二表面之非平面部分上之位置處的該供體膜上,以誘發熔融材料小滴自該供體膜噴出至受體表面上。 An apparatus for material deposition, comprising: a transparent donor substrate having opposing first and second surfaces such that at least a portion of the second surface is non-planar, and the transparent donor substrate is included in the second a donor film on a non-planar portion of the surface; and an optical assembly configured to direct a beam of radiation through the first surface of the donor substrate and impinge on a non-planar portion of the second surface The donor film is placed on the donor film to induce droplets of molten material to be ejected from the donor film onto the surface of the receptor. 如請求項6之裝置,其中該第二表面包含週期性結構。 The device of claim 6, wherein the second surface comprises a periodic structure. 如請求項6之裝置,其中該第二表面包含彎曲結構。 The device of claim 6, wherein the second surface comprises a curved structure. 如請求項6之裝置,其中該第二表面包含多重小面化結構。 The device of claim 6, wherein the second surface comprises a plurality of faceted structures. 如請求項9之裝置,其中該第二表面包含以對置角度定向且塗佈有不同各別供體膜的第一及第二小面。 The device of claim 9, wherein the second surface comprises first and second facets oriented at opposite angles and coated with different respective donor films. 如請求項9之裝置,其中該第二表面包含第一及第二小面,且其中僅該第一小面塗佈有該供體膜。 The device of claim 9, wherein the second surface comprises first and second facets, and wherein only the first facet is coated with the donor film. 一種用於材料沈積之方法,其包含:提供透明供體基板,其具有對置第一及第二表面且在該第二表面上具有以對置角度定向之第一及第二小面,且其包含在該等第一及第二小面上之供體膜;接近受體基板置放該供體基板,其中該第二表面面向該受體基板;及引導一束輻射穿過該供體基板之第一表面,且撞擊在回應於該第二表面之第一及第二小面選擇之位置處的該供體膜上,以誘發熔融材料小滴自該等第一及第二小面上之供體膜噴出至該受體基板上。 A method for material deposition, comprising: providing a transparent donor substrate having opposing first and second surfaces and having first and second facets oriented at opposite angles on the second surface, and a donor film disposed on the first and second facets; placing the donor substrate adjacent to the acceptor substrate, wherein the second surface faces the acceptor substrate; and directing a beam of radiation through the donor a first surface of the substrate and impinging on the donor film at a location selected in response to the first and second facets of the second surface to induce droplets of molten material from the first and second facets The donor film is ejected onto the acceptor substrate. 如請求項12之方法,其中該熔融材料小滴自該供體膜噴出至該等第一及第二小面上係同時進行。 The method of claim 12, wherein the ejecting of the molten material droplets from the donor film to the first and second facets is performed simultaneously. 如請求項12之方法,其中該熔融材料小滴自該供體膜噴出至該等第一及第二小面上係依序進行。 The method of claim 12, wherein the droplets of molten material are ejected from the donor film onto the first and second facets in sequence. 一種用於材料沈積之方法,其包含:提供透明供體基板,其具有對置第一及第二表面且在該第二表面上具有供體膜;接近受體基板之受體表面置放該供體基板,其中該第二表面面向該受體基板且以相對於該受體表面的傾斜角度定向;及引導一束輻射穿過該供體基板之第一表面,且在該第二表面以該傾斜角度定向時撞擊在該供體膜上,以誘發熔融材料小滴自該供體膜噴出至該受體表面上。 A method for depositing a material, comprising: providing a transparent donor substrate having opposing first and second surfaces and having a donor film on the second surface; placing the acceptor surface adjacent the acceptor substrate a donor substrate, wherein the second surface faces the acceptor substrate and is oriented at an oblique angle relative to the surface of the acceptor; and directs a beam of radiation through the first surface of the donor substrate, and at the second surface The oblique angle is directed against the donor film to induce droplets of molten material to be ejected from the donor film onto the surface of the receptor. 如請求項15之方法,其中置放該供體基板包含識別該受體表面上的形貌特徵之三維(3D)形狀,且回應於該3D形狀定向該供體基板。 The method of claim 15, wherein placing the donor substrate comprises identifying a three-dimensional (3D) shape of a topographical feature on the surface of the receptor, and orienting the donor substrate in response to the 3D shape. 如請求項15之方法,其中該第二表面包含彎曲結構。 The method of claim 15, wherein the second surface comprises a curved structure. 如請求項15之方法,其中該供體基板之第二表面包含多重小面化結構。 The method of claim 15 wherein the second surface of the donor substrate comprises a plurality of faceted structures. 如請求項18之方法,其中該多重小面化結構包含以對置角度定向且塗佈有該供體膜的第一及第二小面。 The method of claim 18, wherein the multiple facet structure comprises first and second facets oriented at an opposite angle and coated with the donor film. 如請求項19之方法,其包含使該等小滴自該等第一及第二小面之供體膜同時噴出至該3D形狀上。 The method of claim 19, comprising simultaneously ejecting the droplets from the donor films of the first and second facets onto the 3D shape. 如請求項19之方法,其包含使該等小滴自該等第一及第二小面之供體膜依序噴出至該3D形狀上。 The method of claim 19, comprising sequentially ejecting the droplets from the first and second facets of the donor film onto the 3D shape. 如請求項15之方法,其中該供體基板之第二表面包含週期性結構。 The method of claim 15, wherein the second surface of the donor substrate comprises a periodic structure.
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