TW201432005A - Resin composition, adhesive sheet, dicing tape single unit adhesive sheet, back grind tape single unit adhesive sheet, back grind tape and dicing tape single unit adhesive tape, and electric device - Google Patents

Resin composition, adhesive sheet, dicing tape single unit adhesive sheet, back grind tape single unit adhesive sheet, back grind tape and dicing tape single unit adhesive tape, and electric device Download PDF

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Publication number
TW201432005A
TW201432005A TW102137788A TW102137788A TW201432005A TW 201432005 A TW201432005 A TW 201432005A TW 102137788 A TW102137788 A TW 102137788A TW 102137788 A TW102137788 A TW 102137788A TW 201432005 A TW201432005 A TW 201432005A
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Taiwan
Prior art keywords
resin composition
mass
film
parts
tape
Prior art date
Application number
TW102137788A
Other languages
Chinese (zh)
Inventor
Kenzo Maejima
Original Assignee
Sumitomo Bakelite Co
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Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of TW201432005A publication Critical patent/TW201432005A/en

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3218—Carbocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
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  • Medicinal Chemistry (AREA)
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  • Physics & Mathematics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Epoxy Resins (AREA)
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Abstract

Provided is resin composition which is capable of producing an electronic device having excellent bondability between electrodes and insulating reliability, and an electronic device including hardened product of the resin. Such a resin composition is a resin composition in film-like shape for connecting electrode which is inserted into between electrodes being opposed to each other, for connecting electrically the opposed electrodes, including (A) a multi-functional epoxy resin having a naphthalene skeleton, (B) a compound having both a phenolic hydroxyl group and a carboxyl group in one molecule, and (C) a film-forming resin.

Description

樹脂組成物、接著片、切割膠帶一體型接著片、背面研磨膠帶一體型接著片、背面研磨兼切割膠帶一體型接著片、及電子裝置 Resin composition, adhesive sheet, dicing tape integrated type back sheet, back grinding tape integrated type back sheet, back side grinding and dicing tape integrated type back sheet, and electronic device

本發明係關於樹脂組成物、接著片、切割膠帶一體型接著片、背面研磨膠帶一體型接著片、背面研磨兼切割膠帶一體型接著片、及電子裝置。 The present invention relates to a resin composition, a sheet, a dicing tape-integrated sheet, a back-grinding tape-integrated sheet, a back-grinding and dicing tape-integrated sheet, and an electronic device.

本案係基於2012年10月18日於日本申請之特願2012-230737號主張優先權，並且引用其內容。 The present application claims priority based on Japanese Patent Application No. 2012-230737, filed on Jan.

電子裝置係例如藉由使用焊料來接合半導體元件之電極與其它半導體元件之電極、半導體元件之電極與基板之電極、或基板之電極與其它基板之電極之步驟所製造。 The electronic device is manufactured by, for example, bonding electrodes of a semiconductor element and electrodes of other semiconductor elements, electrodes of the semiconductor elements and electrodes of the substrate, or electrodes of the substrate and electrodes of other substrates by using solder.

由於在使用焊料進行接合之後的半導體元件間、半導體元件與基板之間、或者基板間會產生空隙，因此必須以樹脂硬化物填充空隙。以往在使用焊料進行接合之後，會藉由在該空隙流入流動性的熱硬化性樹脂組成物，然後使熱硬化樹脂硬化，以填充半導體元件間等之空隙。 Since voids are formed between the semiconductor elements after the bonding using the solder, between the semiconductor elements and the substrate, or between the substrates, it is necessary to fill the voids with the cured resin. Conventionally, after bonding using solder, a fluid thermosetting resin composition is introduced into the gap, and then the thermosetting resin is cured to fill a space between the semiconductor elements.

然而，近年來正探討在使用焊料進行接合之前，在半導體元件間等配 置含有具有助焊劑(flux)功能之化合物的樹脂層，然後以焊料的熔點以上之溫度加熱，進行焊料接合，然後進行樹脂層之硬化的方法。 However, in recent years, it has been discussed that before soldering is used, bonding between semiconductor elements is required. A resin layer containing a compound having a flux function and then heated at a temperature equal to or higher than the melting point of the solder to perform solder bonding and then hardening the resin layer.

例如日本特開平3-184695號公報(專利文獻1)揭示含有環氧樹脂作為主成分，並且含有有機酸或有機酸鹽及焊料粒子之焊膏。又，日本特開2001-311005號公報(專利文獻2)揭示一種熱硬化性樹脂片，其特徵為將包含選自環氧系樹脂、苯酚系樹脂、酞酸二烯丙酯系樹脂、及苯環丁烯系樹脂之至少一種熱硬化性樹脂及助焊劑成分的組成物成形為片狀。 Japanese Patent Publication No. Hei 3-184495 (Patent Document 1) discloses a solder paste containing an epoxy resin as a main component and containing an organic acid or an organic acid salt and solder particles. Japanese Laid-Open Patent Publication No. 2001-311005 (Patent Document 2) discloses a thermosetting resin sheet comprising an epoxy resin, a phenol resin, a diallyl citrate resin, and a benzene. The composition of at least one of the thermosetting resin and the flux component of the cyclobutene resin is formed into a sheet shape.

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開平3-184695號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 3-184495

[專利文獻2]日本特開2001-311005號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2001-311005

然而，即使使用如上述專利文獻1~2所示之先前技術，在接合電極彼此時，仍有發生接合不良、絕緣可靠性降低之情形。因此，期望可製造可靠性更高的電子裝置之樹脂組成物。 However, even when the prior art shown in the above Patent Documents 1 to 2 is used, when the electrodes are joined to each other, joint failure occurs and the insulation reliability is lowered. Therefore, it is desirable to be able to manufacture a resin composition of a more reliable electronic device.

本發明係提供一種可得到電極間之接合性、絕緣可靠性高的電子裝置之樹脂組成物、接著片、切割膠帶一體型接著片、背面研磨膠帶一體型接著片、背面研磨兼切割膠帶一體型接著片，以及具有該樹脂組成物之硬化物的電子裝置。 The present invention provides a resin composition, an adhesive sheet, a dicing tape-integrated sheet, a back-grinding tape-integrated sheet, and a back-grinding and cutting tape integrated type of an electronic device capable of obtaining inter-electrode bondability and high insulation reliability. Next, a sheet, and an electronic device having a cured product of the resin composition.

本發明之樹脂組成物係介於相向的電極間，將相向的電極予以電性連接之薄膜狀的電極連接用樹脂組成物，其特徵為：上述樹脂組成物含有： (A)具有萘骨架之多官能環氧樹脂、(B)在1分子中具有苯酚性羥基與羧基之化合物、與(C)薄膜形成性樹脂。 The resin composition of the present invention is a film-like resin composition for electrode connection in which a phase electrode is electrically connected between opposing electrodes, and the resin composition contains: (A) a polyfunctional epoxy resin having a naphthalene skeleton, (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule, and (C) a film-forming resin.

本發明之樹脂組成物可將上述(B)成分設為在1分子中具備2個以上的苯酚性羥基與1個以上的羧基之化合物。 In the resin composition of the present invention, the component (B) may be a compound having two or more phenolic hydroxyl groups and one or more carboxyl groups in one molecule.

本發明之樹脂組成物可將上述(B)成分設為在1分子中具備2個以上的苯酚性羥基、與1個以上的直接鍵結於芳香環之羧基之化合物。 In the resin composition of the present invention, the component (B) may be a compound having two or more phenolic hydroxyl groups in one molecule and one or more carboxyl groups directly bonded to the aromatic ring.

本發明之樹脂組成物，相對於上述樹脂組成物全體，可將上述(A)成分之含量設為1質量%以上、20質量%以下。 In the resin composition of the present invention, the content of the component (A) may be 1% by mass or more and 20% by mass or less based on the total of the resin composition.

本發明之樹脂組成物，相對於上述樹脂組成物全體，可將上述(B)成分之含量設為3質量%以上、25質量%以下。 In the resin composition of the present invention, the content of the component (B) can be 3% by mass or more and 25% by mass or less based on the entire resin composition.

本發明之樹脂組成物可將上述(A)成分與上述(B)成分之含有質量比率[(B)/(A)]設為0.2以上、16以下。 In the resin composition of the present invention, the mass ratio [(B)/(A)] of the component (A) to the component (B) can be 0.2 or more and 16 or less.

本發明之樹脂組成物可進一步含有(D)苯酚樹脂。 The resin composition of the present invention may further contain (D) a phenol resin.

本發明之接著片之特徵為：具有上述樹脂組成物與基底薄膜。 The adhesive sheet of the present invention is characterized by having the above resin composition and a base film.

本發明之切割膠帶一體型接著片之特徵為：具有上述樹脂組成物與切割膠帶。 The dicing tape integrated type back sheet of the present invention is characterized by having the above resin composition and dicing tape.

本發明之背面研磨膠帶一體型接著片之特徵為：具有上述樹脂組成物與背面研磨膠帶。 The back grinding tape integrated type back sheet of the present invention is characterized by comprising the above resin composition and a back grinding tape.

本發明之背面研磨兼切割膠帶一體型接著片之特徵為：具有上述樹脂組 成物、兼為切割膠帶與背面研磨膠帶之背面研磨膠帶兼切割膠帶。 The back grinding and cutting tape integrated type back sheet of the present invention is characterized by having the above resin group The object is a back-grinding tape and cutting tape for cutting tape and back grinding tape.

此外，本發明之電子裝置之特徵為具有上述本發明之樹脂組成物的硬化物。 Further, the electronic device of the present invention is characterized by having a cured product of the above-described resin composition of the present invention.

在本發明中，藉由樹脂組成物含有：(A)具有萘骨架之多官能環氧樹脂、(B)在1分子中具有苯酚性羥基與羧基之化合物、與(C)薄膜形成性樹脂，可得到相向的電極間之連接性、絕緣可靠性優異之電子裝置。 In the present invention, the resin composition contains (A) a polyfunctional epoxy resin having a naphthalene skeleton, (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule, and (C) a film-forming resin. An electronic device having excellent connectivity between electrodes and excellent insulation reliability can be obtained.

根據本發明，可提供一種可提供相向的電極間之連接性、絕緣可靠性高的電子裝置之樹脂組成物接著片、切割膠帶一體型接著片、背面研磨膠帶一體型接著片、背面研磨兼切割膠帶一體型接著片，以及具有該樹脂組成物之硬化物且連接性、絕緣可靠性高的電子裝置。 According to the present invention, it is possible to provide a resin composition adhesive sheet, a dicing tape-integrated back sheet, a back-grinding tape-integrated back sheet, a back-grinding and cutting, which can provide the connection between the opposing electrodes and the electronic device with high insulation reliability. An adhesive-integrated adhesive sheet and an electronic device having a cured product of the resin composition and having high connectivity and insulation reliability.

100‧‧‧電子裝置 100‧‧‧Electronic devices

110‧‧‧第一基板 110‧‧‧First substrate

111‧‧‧形成於第一基板之電極 111‧‧‧ electrodes formed on the first substrate

111a‧‧‧金 111a‧‧ gold

111b‧‧‧鎳 111b‧‧‧ Nickel

111c‧‧‧銅柱 111c‧‧‧ copper column

120‧‧‧第二基板 120‧‧‧second substrate

121‧‧‧形成於第二基板之電極 121‧‧‧ electrodes formed on the second substrate

121a‧‧‧銲點凸塊 121a‧‧‧ solder joint bumps

121b‧‧‧銅柱 121b‧‧‧ copper column

130、201‧‧‧樹脂組成物 130, 201‧‧‧ resin composition

200、210、211‧‧‧接著片 200, 210, 211‧‧‧

202‧‧‧基底薄膜 202‧‧‧Base film

213‧‧‧切割膠帶 213‧‧‧Cut Tape

213a‧‧‧切割膠帶之基材層 213a‧‧‧The base layer of the cutting tape

213b‧‧‧切割膠帶之黏著層 213b‧‧‧Adhesive tape for cutting tape

301‧‧‧背面研磨兼切割膠帶一體型接著片 301‧‧‧Back grinding and cutting tape integrated type

302‧‧‧接著劑層 302‧‧‧ adhesive layer

321‧‧‧剝離基材 321‧‧‧ peeling substrate

303‧‧‧半導體晶圓 303‧‧‧Semiconductor wafer

331‧‧‧功能面 331‧‧‧ functional surface

304‧‧‧研磨台 304‧‧‧ polishing table

305‧‧‧切塊台 305‧‧‧cutting table

306‧‧‧晶圓環 306‧‧‧ wafer ring

307‧‧‧刀片 307‧‧‧blade

300‧‧‧半導體用薄膜 300‧‧‧Semiconductor film

圖1係針對本發明之電子裝置表示其一製造步驟之步驟圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a diagram showing the steps of a manufacturing step for an electronic device of the present invention.

圖2係針對本發明之電子裝置表示其一製造步驟之步驟圖。 Figure 2 is a diagram showing the steps of a manufacturing step for the electronic device of the present invention.

圖3係針對本發明之電子裝置表示其一製造步驟之步驟圖。 Figure 3 is a diagram showing the steps of a manufacturing step of the electronic device of the present invention.

圖4係表示本發明之接著片的一種形態之截面圖。 Fig. 4 is a cross-sectional view showing a form of a sheet of the present invention.

圖5係表示本發明之切割膠帶一體型接著片的一種形態之截面圖。 Fig. 5 is a cross-sectional view showing a form of a dicing tape-integrated sheet of the present invention.

圖6係表示本發明之背面研磨兼切割膠帶一體型接著片的一種形態之截面圖。 Fig. 6 is a cross-sectional view showing an embodiment of a back-grinding and dicing tape-integrated sheet of the present invention.

圖7係表示本發明之背面研磨兼切割膠帶一體型接著片的一種形態之截面圖。 Fig. 7 is a cross-sectional view showing one embodiment of a back-grinding and dicing tape-integrated sheet of the present invention.

圖8係針對本發明之電子裝置表示其製造步驟之截面圖。 Figure 8 is a cross-sectional view showing the manufacturing steps of the electronic device of the present invention.

圖9係針對本發明之電子裝置表示其製造步驟之截面圖。 Figure 9 is a cross-sectional view showing the manufacturing steps of the electronic device of the present invention.

圖10係針對本發明之電子裝置表示其製造步驟之截面圖。 Figure 10 is a cross-sectional view showing the manufacturing steps of the electronic device of the present invention.

以下針對本實施形態作說明。 This embodiment will be described below.

[電子裝置] [electronic device]

圖1~圖3係表示具有電極111之第一基板110、與具有電極121之第二基板120隔著樹脂組成物130接合而成為電子裝置100之步驟。 1 to 3 show a step in which the first substrate 110 having the electrode 111 and the second substrate 120 having the electrode 121 are bonded to each other via the resin composition 130 to form the electronic device 100.

如圖3所示，電子裝置100，係形成於第一基板110之一面的電極111和形成於第二基板120之一面的電極121分別接合，在第一基板110與第二基板120之間填充著樹脂層130。 As shown in FIG. 3, the electronic device 100 is formed by bonding an electrode 111 formed on one surface of the first substrate 110 and an electrode 121 formed on one surface of the second substrate 120, respectively, and filling between the first substrate 110 and the second substrate 120. The resin layer 130 is placed.

[樹脂組成物] [Resin composition]

首先，針對樹脂層130所採用之樹脂組成物作說明。 First, the resin composition used for the resin layer 130 will be described.

作為實施形態之一例，本發明中之樹脂組成物，係導入形成於第一基板110之一面的電極111(金111a/鎳111b/銅柱111c)、與形成於第二基板120之一面的電極121(銲點凸塊121a/銅柱121b)之間，在電極111之銲點凸塊111a與電極121之金121a接合後進行熱硬化之樹脂組成物。亦即，在最終所得之電子裝置100中，以填埋第一基板110與第二基板120之間的間隙之方式形成樹脂層130即可。此外，本實施形態中，第二基板120係半導體晶片。 As an example of the embodiment, the resin composition of the present invention is introduced into an electrode 111 (gold 111a/nickel 111b/copper pillar 111c) formed on one surface of the first substrate 110 and an electrode formed on one surface of the second substrate 120. A resin composition which is thermally hardened between the solder bumps 111a of the electrode 111 and the gold 121a of the electrode 121 between the solder bumps 121a and the copper pillars 121b. That is, in the electronic device 100 finally obtained, the resin layer 130 may be formed to fill a gap between the first substrate 110 and the second substrate 120. Further, in the present embodiment, the second substrate 120 is a semiconductor wafer.

本發明中之樹脂組成物係介於相向的電極間，將相向的電極予以電性連接之薄膜狀之電極連接用樹脂組成物，其特徵為含有：(A)具有萘骨架之多官能環氧樹脂、(B)在1分子中具有苯酚性羥基與羧基之化合物、與(C)薄膜形成性樹脂。 The resin composition of the present invention is a film-form electrode composition for electrode connection in which the opposing electrodes are electrically connected to each other, and is characterized in that: (A) a polyfunctional epoxy having a naphthalene skeleton The resin, (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule, and (C) a film-forming resin.

在本發明之樹脂組成物中，使用(A)具有萘骨架之多官能環氧樹脂。藉 此，可提升本發明之樹脂組成物之硬化物的Tg(玻璃轉移點)，同時可提升絕緣可靠性。 In the resin composition of the present invention, (A) a polyfunctional epoxy resin having a naphthalene skeleton is used. borrow Thereby, the Tg (glass transition point) of the cured product of the resin composition of the present invention can be improved, and the insulation reliability can be improved.

本發明之樹脂組成物中所使用的上述(A)成分，可列舉分子結構中具有萘結構，且具有在該萘環鍵結2個以上之環氧丙醚基之結構者，或此等之混合物。 The component (A) used in the resin composition of the present invention may be a structure having a naphthalene structure in a molecular structure and having two or more glycidyl ether groups bonded to the naphthalene ring, or the like. mixture.

作為前述具有萘骨架之環氧樹脂，並未特別限定，而例如可列舉下述一般式(1)、一般式(2)、一般式(3)或一般式(4)等所表示者。具體而言，可列舉結構式(5)、結構式(6)、結構式(7)、結構式(8)等所表示者。再者，此等之中又以結構式(7)、結構式(8)為特佳。 The epoxy resin having a naphthalene skeleton is not particularly limited, and examples thereof include those represented by the following general formula (1), general formula (2), general formula (3), or general formula (4). Specific examples thereof include those represented by Structural Formula (5), Structural Formula (6), Structural Formula (7), and Structural Formula (8). Furthermore, among these, structural formula (7) and structural formula (8) are particularly preferred.

萘環尤其因為耐熱性優異，因此可提升在半導體裝置在高溫環境下的連接可靠性。 The naphthalene ring is particularly excellent in heat resistance, so that the connection reliability in a high-temperature environment of a semiconductor device can be improved.

式中X係O、SO2、碳數1~6之脂肪族基或芳香族基即1~4價的有機基。m係1~2之整數、n係0~3之整數。 In the formula, X-form O, SO 2 , an aliphatic group having 1 to 6 carbon atoms or an aromatic group, that is, an organic group having 1 to 4 valences. m is an integer from 1 to 2, and n is an integer from 0 to 3.

式中Y係O、SO2、碳數1~6之脂肪族基或芳香族基即1~4價的有機 基。q係1~2之整數。 In the formula, Y is O, SO 2 , an aliphatic group having 1 to 6 carbon atoms or an aromatic group, that is, an organic group having 1 to 4 valence. q is an integer from 1 to 2.

式中Z表示O、SO2、碳數1~6之脂肪族基或芳香族基，r係0~100之整數。 In the formula, Z represents O, SO 2 , an aliphatic group or an aromatic group having 1 to 6 carbon atoms, and r is an integer of 0 to 100.

在本發明之樹脂組成物中，相對於該樹脂組成物全體之上述(A)成分之含量並未特別限定，而以1質量%以上、20質量%以下為較佳。進一步更佳為1質量%以上、17質量%以下。 In the resin composition of the present invention, the content of the component (A) in the entire resin composition is not particularly limited, and is preferably 1% by mass or more and 20% by mass or less. Further, it is more preferably 1% by mass or more and 17% by mass or less.

藉由將樹脂組成物中之(A)成分之含量設為上述下限值以上，可發揮提高Tg(玻璃轉移點)之效果。又，藉由設為上述上限值以下，可確保硬化前之樹脂組成物的可撓性。 When the content of the component (A) in the resin composition is at least the above lower limit value, the effect of increasing the Tg (glass transition point) can be exhibited. Moreover, by setting it as the said upper limit or less, the flexibility of the resin composition before hardening can be ensured.

此外，在本發明之樹脂組成物，除了上述(A)成分以外，可併用其它熱硬化性樹脂。 Further, in the resin composition of the present invention, in addition to the above component (A), other thermosetting resins may be used in combination.

作為在此所使用的熱硬化性樹脂，並未特別限定，例如可列舉環氧樹脂、氧環丁烷(oxetane)樹脂、苯酚樹脂、(甲基)丙烯酸酯樹脂、不飽和聚酯樹脂、酞酸二烯丙酯樹脂、馬來醯亞胺樹脂等。 The thermosetting resin to be used herein is not particularly limited, and examples thereof include an epoxy resin, an oxetane resin, a phenol resin, a (meth) acrylate resin, an unsaturated polyester resin, and hydrazine. Acid diallyl ester resin, maleic imine resin, and the like.

此等之中，又以環氧樹脂為較佳。環氧樹脂具有優異的硬化性與保存性、硬化物之耐熱性、耐濕性、耐藥品性等。 Among these, epoxy resin is preferred. The epoxy resin has excellent hardenability and preservability, heat resistance of a cured product, moisture resistance, chemical resistance, and the like.

本發明之樹脂組成物可含有之環氧樹脂，可為室溫下為固態之環氧樹脂、與室溫下為液態之環氧樹脂中之任一者，亦可為兩者均含有。本發明之樹脂組成物藉由含有環氧樹脂，可進一步提高設計樹脂層之熔融行為(melting behavior)的自由度。 The epoxy resin which may be contained in the resin composition of the present invention may be either an epoxy resin which is solid at room temperature or an epoxy resin which is liquid at room temperature, or may be contained in both. The resin composition of the present invention can further improve the degree of freedom in designing the melting behavior of the resin layer by containing an epoxy resin.

在本發明之樹脂組成物可含有之環氧樹脂中，室溫下為固態之環氧樹脂並未特別限定，而例如可列舉雙酚A型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、環氧丙基胺型環氧樹脂、環氧丙基酯型環氧樹脂、3官能環氧樹脂、4官能環氧樹脂等。此等亦可為1種單獨或2種以上之組合。 In the epoxy resin which can be contained in the resin composition of the present invention, the epoxy resin which is solid at room temperature is not particularly limited, and examples thereof include bisphenol A type epoxy resin, bisphenol S type epoxy resin, and phenol. A novolac type epoxy resin, a cresol novolac type epoxy resin, a glycidylamine type epoxy resin, a glycidyl ester type epoxy resin, a trifunctional epoxy resin, a tetrafunctional epoxy resin, or the like. These may also be one type or a combination of two or more types.

本發明之樹脂組成物可含有之環氧樹脂中，室溫下為液態之環氧樹脂並未特別限定，而例如可列舉雙酚A型環氧樹脂、雙酚F型環氧樹脂、苯酚酚醛清漆型環氧樹脂、烯丙基化雙酚A型環氧樹脂、改性環氧樹脂、環己烷二甲醇二環氧丙基醚等。此等亦可為1種單獨或2種以上之組合。室溫下為液態之環氧樹脂的環氧當量較佳為120~400、更佳為140~360、進一步更佳為160~320。藉此，可防止樹脂層之硬化物的收縮率變大，以確實地防止電子裝置發生翹曲。 The epoxy resin which can be contained in the resin composition of the present invention is not particularly limited as long as it is liquid at room temperature, and examples thereof include bisphenol A type epoxy resin, bisphenol F type epoxy resin, and phenol novolac. Varnish type epoxy resin, allylated bisphenol A type epoxy resin, modified epoxy resin, cyclohexane dimethanol diglycidyl ether, and the like. These may also be one type or a combination of two or more types. The epoxy equivalent of the epoxy resin which is liquid at room temperature is preferably from 120 to 400, more preferably from 140 to 360, still more preferably from 160 to 320. Thereby, it is possible to prevent the shrinkage rate of the cured product of the resin layer from becoming large, and it is possible to surely prevent warpage of the electronic device.

在本發明之樹脂組成物中，使用(B)在1分子中具有苯酚性羥基與羧基之化合物。藉此，可賦予樹脂組成物助焊劑功能，在可提升電極間之連接性、絕緣可靠性的同時，可與上述(A)成分反應，因此可納入至硬化物的分子骨架中，因而可具有安定的絕緣性。 In the resin composition of the present invention, (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule is used. Thereby, the resin composition can be provided with a flux function, and since it can improve the connectivity between the electrodes and the insulation reliability, and can react with the component (A), it can be incorporated into the molecular skeleton of the cured product, and thus can have Stable insulation.

在本發明之樹脂組成物中，作為上述(B)成分，可使用在1分子中具有1個苯酚性羥基與1個羧基者。 In the resin composition of the present invention, as the component (B), one having one phenolic hydroxyl group and one carboxyl group in one molecule can be used.

作為這種(B)成分，可例示2-羥苯甲酸、3-羥苯甲酸、4-羥苯甲酸、1-羥基-2-萘甲酸、2-羥基-1-萘甲酸、3-羥基-2-萘甲酸、6-羥基-1-萘甲酸、6-羥基-2-萘甲酸等羥基萘甲酸類；2-羥基桂皮酸、3-羥基桂皮酸、4-羥基桂皮酸等羥基桂皮酸類等。 As such a component (B), 2-hydroxybenzoic acid, 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, 1-hydroxy-2-naphthoic acid, 2-hydroxy-1-naphthoic acid, 3-hydroxy- can be exemplified. Hydroxynaphthoic acid such as 2-naphthoic acid, 6-hydroxy-1-naphthoic acid or 6-hydroxy-2-naphthoic acid; hydroxycinnamic acid such as 2-hydroxycinnamic acid, 3-hydroxycinnamic acid, 4-hydroxycinnamic acid, etc. .

這種(B)成分，在可賦予樹脂組成物助焊劑作用的同時，當併用(A)成分或者(A)成分以外的環氧樹脂時，亦可與此等環氧樹脂進行加成反應。 In the component (B), when the epoxy resin other than the component (A) or the component (A) is used in combination with the flux of the resin composition, the addition reaction may be carried out with these epoxy resins.

又，在本發明之樹脂組成物中，作為上述(B)成分，可使用在1分子中具有2個以上的苯酚性羥基與1個以上的羧基者。作為這種(B)成分，可列舉二酚酸、2,3-二羥苯甲酸、2,4-二羥苯甲酸、龍膽酸(2,5-二羥苯甲酸)、2,6-二羥苯甲酸、3,4-二羥苯甲酸、沒食子酸(3,4,5-三羥苯甲酸)等苯甲酸衍生物；1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、3,7-二羥基-2-萘甲酸等萘甲酸衍生物；酚酞；及雙羥萘酸(pamoic acid)等，此等亦可為1種單獨或2種以上之組合。 In the resin composition of the present invention, as the component (B), one or more phenolic hydroxyl groups and one or more carboxyl groups in one molecule can be used. Examples of such a component (B) include diphenolic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), and 2,6-. Benzoic acid derivatives such as dihydroxybenzoic acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3, a naphthoic acid derivative such as 5-dihydroxy-2-naphthoic acid or 3,7-dihydroxy-2-naphthoic acid; phenolphthalein; and pamoic acid, etc., which may also be one type or two separately. A combination of the above.

這種(B)成分，在可賦予樹脂組成物助焊劑作用的同時，當併用(A)成分 或者(A)成分以外的環氧樹脂時，亦可藉由與此等環氧樹脂之加成反應，作為其硬化劑發揮作用。 The component (B) is used in combination with the component (A) while imparting a flux to the resin composition. Alternatively, when an epoxy resin other than the component (A) is added, it may act as a curing agent by an addition reaction with the epoxy resin.

又，在本發明之樹脂組成物中，作為上述(B)成分，可使用在1分子中具備2個以上的苯酚性羥基、與1個以上的直接鍵結於芳香環之羧基之化合物。 In the resin composition of the present invention, as the component (B), a compound having two or more phenolic hydroxyl groups in one molecule and one or more carboxyl groups directly bonded to the aromatic ring can be used.

作為這種(B)成分，例如可列舉2,3-二羥苯甲酸、2,4-二羥苯甲酸、龍膽酸(2,5-二羥苯甲酸)、2,6-二羥苯甲酸、3,4-二羥苯甲酸、沒食子酸(3,4,5-三羥苯甲酸)等苯甲酸衍生物；1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、3,7-二羥基-2-萘甲酸等萘甲酸衍生物；及酚酞、雙羥萘酸等，此等亦可為1種單獨或2種以上之組合。 Examples of such a component (B) include 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), and 2,6-dihydroxybenzene. Benzoic acid derivatives such as formic acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-di A naphthoic acid derivative such as hydroxy-2-naphthoic acid or 3,7-dihydroxy-2-naphthoic acid; and phenolphthalein or pamoic acid, and the like may be one type or a combination of two or more types.

這種(B)成分，在可賦予樹脂組成物助焊劑作用的同時，當併用(A)成分或者(A)成分以外的環氧樹脂時，亦可藉由與此等環氧樹脂之加成反應，作為其硬化劑發揮作用。 The component (B) may be added to the epoxy resin other than the component (A) or the component (A), and may be added to the epoxy resin. The reaction acts as a hardener.

本發明之樹脂組成物，藉由併用上述(A)成分與(B)成分，可得到具有起因於高絕緣性與助焊劑作用之焊料連接性的樹脂組成物。 In the resin composition of the present invention, by using the above components (A) and (B) in combination, a resin composition having solder joint properties due to high insulating properties and flux action can be obtained.

在本發明之樹脂組成物中，相對於該樹脂組成物全體之上述(B)成分之含量並未特別限定，而以3質量%以上、25質量%以下為較佳。進一步更佳為3.5質量%以上、20質量%以下。 In the resin composition of the present invention, the content of the component (B) in the entire resin composition is not particularly limited, and is preferably 3% by mass or more and 25% by mass or less. Further, it is more preferably 3.5% by mass or more and 20% by mass or less.

藉由將樹脂組成物中的(B)成分之含量設為上述下限值以上，可確保硬化後之樹脂組成物的絕緣性。又，藉由設為上述上限值以下，可確保顯現有效的助焊劑作用所致之焊料連接性。 When the content of the component (B) in the resin composition is at least the above lower limit value, the insulating property of the resin composition after curing can be ensured. Further, by setting it to be equal to or less than the above upper limit value, it is possible to ensure the solder joint property due to the effective flux action.

又，在本發明之樹脂組成物中，樹脂組成物中之上述(A)成分與上述(B)成分之含有質量比率[(B)/(A)]為0.2以上、16以下為較佳。進一步更佳為0.5以上、13以下、特佳為0.7以上、10以下。 In the resin composition of the present invention, the mass ratio [(B)/(A)] of the component (A) to the component (B) in the resin composition is preferably 0.2 or more and 16 or less. Further, it is more preferably 0.5 or more and 13 or less, and particularly preferably 0.7 or more and 10 or less.

藉由將上述質量比率設為上述下限值以上，可確保樹脂組成物之有效的助焊劑作用與成膜性或可撓性。又，藉由設為上述上限值以下，可確保 硬化後之樹脂組成物的絕緣性與成膜性或可撓性。 By setting the mass ratio to be equal to or higher than the above lower limit value, it is possible to secure an effective flux action and film formability or flexibility of the resin composition. Moreover, by setting it as the said upper limit or less, it can ensure. Insulation and film forming properties or flexibility of the cured resin composition.

在本發明之樹脂組成物中，使用(C)薄膜形成性樹脂。藉此，可輕易地將樹脂組成物作成薄膜狀，可有效率地製作連接性及絕緣可靠性優異之電子裝置。 In the resin composition of the present invention, (C) a film-forming resin is used. Thereby, the resin composition can be easily formed into a film shape, and an electronic device excellent in connectivity and insulation reliability can be efficiently produced.

作為薄膜形成性樹脂，例如可列舉(甲基)丙烯酸系樹脂、苯氧基樹脂、聚酯樹脂、聚胺甲酸酯樹脂、聚醯亞胺樹脂、矽氧烷改性聚醯亞胺樹脂、聚丁二烯、聚丙烯、苯乙烯-丁二烯-苯乙烯共聚物、苯乙烯-乙烯-丁烯-苯乙烯共聚物、聚縮醛樹脂、聚乙烯丁醛樹脂、聚乙烯縮醛樹脂、丁基橡膠、氯丁二烯橡膠、聚醯胺樹脂、丙烯腈-丁二烯共聚物、丙烯腈-丁二烯-丙烯酸共聚物、丙烯腈-丁二烯-苯乙烯共聚物、聚乙酸乙烯酯、耐綸等。 Examples of the film-forming resin include a (meth)acrylic resin, a phenoxy resin, a polyester resin, a polyurethane resin, a polyimide resin, a decane-modified polyimine resin, and the like. Polybutadiene, polypropylene, styrene-butadiene-styrene copolymer, styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, Butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, polyvinyl acetate Ester, nylon, etc.

此等之中，又以(甲基)丙烯酸系樹脂、苯氧基樹脂為較佳。藉由採用(甲基)丙烯酸系樹脂或苯氧基樹脂，可兼顧薄膜形成性與對於支撐體及黏著體之密合性。薄膜形成性樹脂可1種單獨或組合2種以上來使用。 Among these, a (meth)acrylic resin or a phenoxy resin is preferable. By using a (meth)acrylic resin or a phenoxy resin, the film formability and the adhesion to the support and the adherend can be achieved. The film-forming resin can be used singly or in combination of two or more kinds.

此外，在薄膜形成性樹脂中，(甲基)丙烯酸系樹脂係意指(甲基)丙烯酸及其衍生物之聚合物、或者(甲基)丙烯酸及其衍生物與其它單體之共聚物。在此，表記為(甲基)丙烯酸等時，係意指丙烯酸或甲基丙烯酸。 Further, in the film-forming resin, the (meth)acrylic resin means a polymer of (meth)acrylic acid and a derivative thereof, or a copolymer of (meth)acrylic acid and a derivative thereof and another monomer. Here, when it is represented by (meth)acrylic acid or the like, it means acrylic acid or methacrylic acid.

以作為薄膜形成性樹脂所使用之丙烯酸系樹脂而言，具體而言可列舉聚丙烯酸、聚甲基丙烯酸、聚丙烯酸甲酯、聚丙烯酸乙酯、聚丙烯酸丁酯、聚丙烯酸-2-乙基己酯等聚丙烯酸酯；聚甲基丙烯酸甲酯、聚甲基丙烯酸乙酯、聚甲基丙烯酸丁酯等聚甲基丙烯酸酯；聚丙烯腈、聚甲基丙烯腈、聚丙烯醯胺、丙烯酸丁酯-丙烯酸乙酯-丙烯腈共聚物、丙烯腈-丁二烯共聚物、丙烯腈-丁二烯-丙烯酸共聚物、丙烯腈-丁二烯-苯乙烯共聚物、丙烯腈-苯乙烯共聚物、甲基丙烯酸甲酯-苯乙烯共聚物、甲基丙烯酸甲酯-丙烯腈共聚物、甲基丙烯酸甲酯-α-甲基苯乙烯共聚物、丙烯酸丁酯-丙烯酸乙酯-丙烯腈-甲基丙烯酸2-羥基乙酯-甲基丙烯酸共聚物、丙烯酸丁酯-丙烯酸乙酯-丙烯腈-甲基丙烯酸2-羥基乙酯-丙烯酸共聚物、丙烯酸丁酯-丙烯腈-甲基丙烯酸 2-羥基乙酯共聚物、丙烯酸丁酯-丙烯腈-丙烯酸共聚物、丙烯酸丁酯-丙烯酸乙酯-丙烯腈共聚物、丙烯酸乙酯-丙烯腈-N,N-二甲基丙烯醯胺共聚物等。 Specific examples of the acrylic resin used as the film-forming resin include polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and poly-2-ethyl acrylate. Polyacrylate such as hexyl ester; polymethacrylate such as polymethyl methacrylate, polyethyl methacrylate or polybutyl methacrylate; polyacrylonitrile, polymethacrylonitrile, polypropylene decylamine, acrylic acid Butyl ester-ethyl acrylate-acrylonitrile copolymer, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer , methyl methacrylate-styrene copolymer, methyl methacrylate-acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile- 2-Hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-methacrylic acid 2-hydroxyethyl ester copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, ethyl acrylate-acrylonitrile-N,N-dimethyl acrylamide copolymerization Things and so on.

此等之中，又以丙烯酸丁酯-丙烯酸乙酯-丙烯腈共聚物、丙烯酸乙酯-丙烯腈-N,N-二甲基丙烯醯胺共聚物為較佳。 Among these, a butyl acrylate-ethyl acrylate-acrylonitrile copolymer, an ethyl acrylate-acrylonitrile-N,N-dimethyl acrylamide copolymer is preferred.

此外，以作為薄膜形成性樹脂所使用之丙烯酸系樹脂而言，藉由使用共聚合具有腈基、環氧基、羥基、羧基等官能基之單體而成之(甲基)丙烯酸系樹脂，可提升薄膜狀的樹脂組成物對於支撐體及黏著體之密合性、以及與熱硬化性樹脂等之互溶性。 In addition, the acrylic resin used as the film-forming resin is a (meth)acrylic resin obtained by copolymerizing a monomer having a functional group such as a nitrile group, an epoxy group, a hydroxyl group or a carboxyl group. The adhesion of the film-form resin composition to the support and the adherend, and the compatibility with the thermosetting resin or the like can be improved.

上述丙烯酸系樹脂之重量平均分子量係例如以1000以上100萬以下、3000以上90萬以下為較佳。 The weight average molecular weight of the acrylic resin is preferably, for example, 1,000 or more and 1,000,000 or less, and 3,000 or more and 900,000 or less.

藉由上述丙烯酸系樹脂之重量平均分子量為上述範圍，可在進一步提升樹脂組成物之成膜性的同時，確保硬化時之流動性。 When the weight average molecular weight of the acrylic resin is in the above range, the film formability of the resin composition can be further improved, and the fluidity at the time of curing can be ensured.

又，作為薄膜形成性樹脂，當使用苯氧基樹脂時，係以其數量平均分子量為5000~20000之苯氧基樹脂為較佳。 Further, as the film-forming resin, when a phenoxy resin is used, a phenoxy resin having a number average molecular weight of 5,000 to 20,000 is preferable.

藉由使用該數量平均分子量之苯氧基樹脂，可抑制薄膜狀的樹脂組成物之流動性，使薄膜狀的樹脂組成物之厚度均勻。 By using the phenoxy resin having the number average molecular weight, the fluidity of the film-form resin composition can be suppressed, and the thickness of the film-form resin composition can be made uniform.

苯氧基樹脂之骨架並未特別限定，而例如可列舉雙酚A型、雙酚F型、聯苯骨架型、聯苯酚骨架型等。 The skeleton of the phenoxy resin is not particularly limited, and examples thereof include a bisphenol A type, a bisphenol F type, a biphenyl skeleton type, and a biphenol skeleton type.

在本發明之樹脂組成物中，相對於該樹脂組成物全體之上述(C)成分之含量並未特別限定，而以0.1質量%以上、20質量%以下為較佳，進一步更佳為0.2質量%以上、10質量%以下。 In the resin composition of the present invention, the content of the component (C) in the entire resin composition is not particularly limited, and is preferably 0.1% by mass or more and 20% by mass or less, and more preferably 0.2% by mass. % or more and 10% by mass or less.

藉由將樹脂組成物中之(C)成分之含量設為上述範圍內，可抑制薄膜狀的樹脂組成物之成膜性降低，同時抑制硬化後之薄膜狀的樹脂組成物之彈性係數增加。其結果為可進一步提升薄膜狀的樹脂組成物與支撐體及黏著體之密合性。再者，可抑制薄膜狀的樹脂組成物之熔融黏度增加。 By setting the content of the component (C) in the resin composition to the above range, it is possible to suppress a decrease in the film formability of the film-form resin composition and to suppress an increase in the modulus of elasticity of the film-form resin composition after curing. As a result, the adhesion of the film-form resin composition to the support and the adherend can be further improved. Further, it is possible to suppress an increase in the melt viscosity of the film-form resin composition.

本發明之樹脂組成物並未特別限定，而當除了上述(A)~(C)成分以外，與(A)成分同時併用環氧樹脂作為熱硬化樹脂時，以含有硬化劑為較佳。這種硬化劑只要是作為環氧樹脂之硬化劑發揮作用者即可，可適當選擇。 The resin composition of the present invention is not particularly limited, and when an epoxy resin is used in combination with the component (A) as the thermosetting resin in addition to the above components (A) to (C), it is preferred to contain a curing agent. Such a curing agent may be used as long as it acts as a curing agent for an epoxy resin, and can be appropriately selected.

具體而言，可列舉二乙三胺、三乙四胺、間二甲苯二胺等脂肪族多胺，二胺二苯甲烷、間苯二胺、二胺二苯碸等芳香族多胺，包含二氰二胺、有機酸二醯肼等之多胺化合物等胺系硬化劑；六氫酞酸酐、甲基四氫酞酸酐等脂肪族酸酐，偏苯三酸酐、苯均四酸酐、二苯甲酮四羧酸等芳香族酸酐等酸酐系硬化劑；苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、苯酚芳烷基(包含伸苯基、聯伸苯基骨架)樹脂、萘酚芳烷基(包含伸苯基、聯伸苯基骨架)樹脂、三酚甲烷樹脂、二環戊二烯型苯酚樹脂、雙(單或二第三丁基苯酚)丙烷、亞甲基雙(2-丙烯基)苯酚、伸丙基雙(2-丙烯基)苯酚、雙[(2-丙烯氧基)苯基]甲烷、雙[(2-丙烯氧基)苯基]丙烷、4,4’-(1-甲基亞乙基)雙[2-(2-丙烯基)苯酚]、4,4’-(1-甲基亞乙基)雙[2-(1-苯乙基)苯酚]、4,4’-(1-甲基亞乙基)雙[2-甲基-6-羥基甲基苯酚]、4,4’-(1-甲基亞乙基)雙[2-甲基-6-(2-丙烯基)苯酚]、4,4’-(1-甲基亞十四基)雙酚等苯酚系硬化劑等。 Specific examples thereof include aliphatic polyamines such as diethylenetriamine, triethylenetetramine, and m-xylenediamine, and aromatic polyamines such as diamine diphenylmethane, m-phenylenediamine, and diamine diphenylhydrazine, and the like. An amine-based curing agent such as a polyamine compound such as dicyandiamide or an organic acid dioxime; an aliphatic acid anhydride such as hexahydrophthalic anhydride or methyltetrahydrophthalic anhydride; trimellitic anhydride, pyromellitic anhydride, or benzophenone tetracarboxylic acid; An acid anhydride hardener such as an aromatic acid anhydride such as an acid; a phenol novolak resin, a cresol novolak resin, a phenol aralkyl group (including a phenylene group, a stretch phenyl skeleton) resin, and a naphthol aralkyl group (including a phenylene group) , extended phenyl skeleton) resin, trisphenol methane resin, dicyclopentadiene type phenol resin, bis(mono or ditributyl butyl phenol) propane, methylene bis(2-propenyl) phenol, propylene Bis(2-propenyl)phenol, bis[(2-propenyloxy)phenyl]methane, bis[(2-propenyloxy)phenyl]propane, 4,4'-(1-methyl-ethylene Bis[2-(2-propenyl)phenol], 4,4'-(1-methylethylidene)bis[2-(1-phenylethyl)phenol], 4,4'-(1 -methylethylidene)bis[2-methyl-6-hydroxymethylphenol], 4,4'-(1 A phenolic curing agent such as -methylethylene)bis[2-methyl-6-(2-propenyl)phenol] or 4,4'-(1-methyltetradecyl)bisphenol.

此等之中，若使用苯酚樹脂(上述苯酚系硬化劑)，則可有效地提升樹脂組成物之硬化物的玻璃轉移溫度，又可減少會成為逸出氣體(outgas)之成分。 Among these, when a phenol resin (the above-mentioned phenol-based curing agent) is used, the glass transition temperature of the cured product of the resin composition can be effectively increased, and the component which becomes an outgas can be reduced.

當使用上述硬化劑時，硬化劑的用量係從環氧樹脂之環氧當量與硬化劑之當量之比來計算所求得。當硬化劑為苯酚樹脂時，環氧樹脂之環氧基(Ep)與硬化劑之苯酚性羥基(OH)之當量比(Ep/OH)係以0.5~1.5為較佳、0.7~1.3為特佳。藉由設為上述範圍，可兼顧薄膜狀的樹脂組成物之耐熱性與保存性。 When the above hardener is used, the amount of the hardener is determined from the ratio of the epoxy equivalent of the epoxy resin to the equivalent weight of the hardener. When the hardener is a phenol resin, the equivalent ratio (Ep/OH) of the epoxy group (Ep) of the epoxy resin to the phenolic hydroxyl group (OH) of the hardener is preferably 0.5 to 1.5, and 0.7 to 1.3. good. By setting it as the said range, the heat resistance and the preservability of the film-form resin composition can be acquired.

此外，在算出上述苯酚性羥基(OH)之量時，係以硬化劑之苯酚性羥基、(B)成分所具有之苯酚性羥基與羧基相加而算出為較佳。 In addition, when the amount of the phenolic hydroxyl group (OH) is calculated, it is preferably calculated by adding a phenolic hydroxyl group of the curing agent and a phenolic hydroxyl group of the component (B) to the carboxyl group.

又，本發明之樹脂組成物並未特別限定，而當除了上述(A)~(C)成分以外，與(A)成分同時併用環氧樹脂作為熱硬化樹脂時，可含有硬化促進劑。 這種硬化促進劑只要是促進環氧樹脂與硬化劑之硬化反應者即可，可適當選擇。具體而言，可列舉咪唑類、1,8-二吖雙環(5,4,0)十一烯等胺系觸媒、三苯基膦或四取代鏻與多官能苯酚化合物之鹽等磷化合物。此等之中，又以兼顧薄膜狀的樹脂層之速硬化性、保存性、半導體元件上之鋁墊腐蝕性之咪唑類、磷化合物為較佳。 Further, the resin composition of the present invention is not particularly limited, and when a resin is used as the thermosetting resin in combination with the component (A) in addition to the components (A) to (C), a curing accelerator may be contained. The hardening accelerator may be appropriately selected as long as it promotes the hardening reaction between the epoxy resin and the curing agent. Specific examples thereof include phosphorus-based compounds such as an amine-based catalyst such as an imidazole or 1,8-difluorenebicyclo(5,4,0)undecene, and a salt of a triphenylphosphine or a tetrasubstituted anthracene and a polyfunctional phenol compound. . Among these, it is preferable to use an imidazole or a phosphorus compound which combines the rapid curing property of the film-form resin layer, the preservability, and the aluminum pad corrosion property on the semiconductor element.

當使用上述硬化促進劑時，硬化促進劑之含量係以相對於樹脂組成物全體為0.001~10質量%為較佳、0.003~7質量%為進一步更佳、0.01~5質量%為更佳。 When the above-mentioned hardening accelerator is used, the content of the curing accelerator is preferably 0.001 to 10% by mass, more preferably 0.003 to 7% by mass, still more preferably 0.01 to 5% by mass, based on the total amount of the resin composition.

藉由設為上述範圍，變得可以保持薄膜狀的樹脂組成物之硬化性及保存性、硬化後之物性平衡。 By setting it as the said range, the hardening property of a film-form resin composition, the preservability, and the balance of the physical property after hardening can be maintained.

又，本發明之樹脂組成物並未特別限定，而除了上述(A)~(C)成分以外，可含有無機填充材。藉此，可縮小薄膜狀樹脂組成物之硬化物的線膨脹係數，而可提升使用其之電子裝置的連接性、絕緣可靠性。又，變得可以更輕易調節薄膜狀的樹脂組成物之黏力(tack force)，例如，當使用薄膜狀的樹脂組成物並且同時使用支撐體時，可作成與支撐體之剝離性更理想者，同時可作成對於具有電極之基板或半導體晶片等的接著性尤其優異者。 Further, the resin composition of the present invention is not particularly limited, and may contain an inorganic filler in addition to the above components (A) to (C). Thereby, the linear expansion coefficient of the cured product of the film-like resin composition can be reduced, and the connectivity and insulation reliability of the electronic device using the same can be improved. Further, it becomes possible to more easily adjust the tack force of the film-form resin composition, for example, when a film-like resin composition is used and a support is used at the same time, it is preferable to form a peeling property with the support. At the same time, it is possible to make the adhesion to a substrate having an electrode or a semiconductor wafer or the like particularly excellent.

作為無機填充材，例如可列舉銀、氧化鈦、二氧化矽、雲母等，而此等之中又以二氧化矽為較佳。又，以二氧化矽的形狀而言，有破碎二氧化矽與球狀二氧化矽，而以球狀二氧化矽為較佳。又，從導熱性等觀點來看，亦可使用氧化鋁、氮化鋁、氧化鈦、氮化矽、氮化硼等。 Examples of the inorganic filler include silver, titanium oxide, cerium oxide, mica, and the like, and among these, cerium oxide is preferred. Further, in terms of the shape of cerium oxide, there are crushed cerium oxide and spherical cerium oxide, and spherical cerium oxide is preferred. Further, from the viewpoint of thermal conductivity and the like, alumina, aluminum nitride, titanium oxide, tantalum nitride, boron nitride or the like can also be used.

又，無機填充材之平均粒徑並未特別限定，而以0.01μm以上、20μm以下者為較佳，0.03μm以上、5μm以下者為更佳。 Further, the average particle diameter of the inorganic filler is not particularly limited, and is preferably 0.01 μm or more and 20 μm or less, and more preferably 0.03 μm or more and 5 μm or less.

藉由設為上述範圍，可抑制薄膜狀的樹脂組成物內之無機填充材的凝集，而得到沒有無機填充材之凝集物的均質樹脂組成物。 By setting it as the said range, the aggregation of the inorganic filler in the film-form resin composition can be suppressed, and the homogeneous resin composition which does not have the aggregate of the inorganic filler is obtained.

上述無機填充材之含量並未特別限定，而以相對於樹脂組成物全體為1 ~80質量%者為較佳、20~75質量%者為進一步更佳、30~70質量%者為更佳。 The content of the above inorganic filler is not particularly limited, but is 1 with respect to the entire resin composition. It is preferable that it is preferably 80% by mass or more, and 20% to 75% by mass is more preferably 30% to 70% by mass.

藉由設為上述範圍，可縮小硬化後之樹脂組成物與具有電極之基板或半導體晶片之線膨脹係數差，減少溫度循環試驗時所產生的應力，同時可抑制硬化後之樹脂組成物的彈性係數變得過高，因此可提升電子裝置之連接性、絕緣可靠性。 By setting it as the above range, the difference in linear expansion coefficient between the cured resin composition and the substrate or semiconductor wafer having the electrode can be reduced, the stress generated in the temperature cycle test can be reduced, and the elasticity of the resin composition after hardening can be suppressed. Since the coefficient becomes too high, the connectivity and insulation reliability of the electronic device can be improved.

本發明之樹脂組成物除了上述成分以外，亦可適當含有偶聯劑、用於提升具有助焊劑作用之化合物的活性之助焊劑活化劑、低應力劑、抗氧化劑、均平劑、用於提升其它樹脂之互溶性、安定性、作業性等各種特性之各種添加劑。 In addition to the above components, the resin composition of the present invention may suitably contain a coupling agent, a flux activator for improving the activity of a compound having a flux action, a low stress agent, an antioxidant, a leveling agent, and the like. Various additives of various properties such as mutual solubility, stability, and workability of other resins.

欲將本發明之樹脂組成物成形為薄膜狀，例如可藉由將包含上述(A)~(C)成分之溶劑可溶性的成分溶解於溶劑中後，添加無機填充材以調製樹脂組成物清漆，並將其塗布於聚酯片等經施加剝離處理之支撐體上，以規定的溫度去除溶劑，使其乾燥而得到。 In order to mold the resin composition of the present invention into a film form, for example, a solvent-soluble component containing the above components (A) to (C) may be dissolved in a solvent, and then an inorganic filler may be added to prepare a resin composition varnish. This is applied to a support to which a release treatment is applied, such as a polyester sheet, and the solvent is removed at a predetermined temperature and dried.

此外，作為調製上述樹脂組成物清漆所使用之溶劑，例如可列舉丙酮、甲基乙基酮、甲基異丁基酮、DIBK(二異丁基酮)、環己酮、DAA(二丙酮醇)等酮類；苯、二甲苯、甲苯等芳香族烴類；甲醇、乙醇、異丙醇、正丁醇等醇類；甲基賽路蘇、乙基賽路蘇、丁基賽路蘇、甲基賽路蘇乙酸酯、乙基賽路蘇乙酸酯、BCSA(丁基賽路蘇乙酸酯)等賽路蘇系；NMP(N-甲基-2-吡咯啶酮)、THF(四氫呋喃)、DMF(二甲基甲醯胺)、DBE(二元酸酯)、EEP(3-乙氧基丙酸乙酯)、DMC(碳酸二甲酯)等。 In addition, examples of the solvent used for preparing the resin composition varnish include acetone, methyl ethyl ketone, methyl isobutyl ketone, DIBK (diisobutyl ketone), cyclohexanone, and DAA (diacetone alcohol). Ketones; aromatic hydrocarbons such as benzene, xylene, toluene; alcohols such as methanol, ethanol, isopropanol and n-butanol; methyl sirlox, ethyl serosol, butyl seduce,赛赛苏系, such as methyl sarbuta acetate, ethyl sarbuta acetate, BCSA (butyl stilbene acetate); NMP (N-methyl-2-pyrrolidone), THF (tetrahydrofuran), DMF (dimethylformamide), DBE (dibasic acid ester), EEP (ethyl 3-ethoxypropionate), DMC (dimethyl carbonate), and the like.

又，薄膜狀的樹脂組成物之厚度(平均)並未特別限定，而以3~100μm左右者為較佳、5~50μm左右者為更佳。 Further, the thickness (average) of the film-form resin composition is not particularly limited, and is preferably from about 3 to 100 μm, more preferably from about 5 to 50 μm.

[電子裝置] [electronic device]

其次，針對本發明之電子裝置作說明。本發明之電子裝置之特徵係具 有上述本發明之樹脂組成物的硬化物。 Next, an explanation will be given of an electronic device of the present invention. Characteristic device of the electronic device of the invention There is a cured product of the above resin composition of the present invention.

以下說明本發明之電子裝置100的製造方法之一例。 An example of a method of manufacturing the electronic device 100 of the present invention will be described below.

首先，如圖1所示，於第一基板110之一面形成電極111(金111a/鎳111b/銅柱111c)，並且同樣地在第二基板120之一面形成電極121(銲點凸塊121a/銅柱121b)。 First, as shown in FIG. 1, an electrode 111 (gold 111a/nickel 111b/copper pillar 111c) is formed on one surface of the first substrate 110, and an electrode 121 is formed on one surface of the second substrate 120 (joint bump 121a/ Copper pillar 121b).

作為使用於接合電極111與電極121(接合銲點凸塊121a與金111a)之焊料，並未特別限制，可列舉包含選自由錫、銀、鉛、鋅、鉍、銦及銅所構成之群組的至少2種以上之合金等。焊料之熔點為100~350℃。 The solder used for the bonding electrode 111 and the electrode 121 (the bonding pad bump 121a and the gold 111a) is not particularly limited, and includes a group selected from the group consisting of tin, silver, lead, zinc, antimony, indium, and copper. At least two or more alloys of the group. The melting point of the solder is 100 to 350 °C.

其次，在第一基板110之電極111與第二基板120之電極121之間導入薄膜狀的樹脂組成物130，如圖2所示，熔融接合第一基板110之電極111與第二基板120之電極121，同時將樹脂層130填充於第一基板110與第二基板120之間。 Next, a film-like resin composition 130 is introduced between the electrode 111 of the first substrate 110 and the electrode 121 of the second substrate 120, and as shown in FIG. 2, the electrode 111 of the first substrate 110 and the second substrate 120 are fused. The electrode 121 simultaneously fills the resin layer 130 between the first substrate 110 and the second substrate 120.

亦即，在本實施形態中，藉由以第一基板110之電極111與第二基板120之電極121夾住樹脂組成物130的方式積層，同時熔融接合電極111與電極121，樹脂組成物130會熔融而擴展，而可在焊料接合的同時，藉由樹脂組成物130填充第一基板110與第二基板120之間。 In other words, in the present embodiment, the resin composition 130 is sandwiched between the electrode 111 of the first substrate 110 and the electrode 121 of the second substrate 120, and the electrode 111 and the electrode 121 are fused together, and the resin composition 130 It melts and expands, and the first substrate 110 and the second substrate 120 are filled by the resin composition 130 while solder bonding.

焊料接合只要在焊料之熔點以上的溫度即可，例如130~380℃。 The solder joint may be at a temperature equal to or higher than the melting point of the solder, for example, 130 to 380 °C.

如圖3所示，第一基板110之電極111與第二基板120之電極121熔融接合後，使樹脂組成物130熱硬化。藉此，可作成電子裝置100。 As shown in FIG. 3, after the electrode 111 of the first substrate 110 and the electrode 121 of the second substrate 120 are fusion-bonded, the resin composition 130 is thermally cured. Thereby, the electronic device 100 can be formed.

加熱溫度只要是樹脂組成物130之硬化溫度以上的溫度即可，可適當選擇，而通常為100~250℃、較佳為150~200℃。加熱時間可依據樹脂組成物130之種類來適當選擇，而通常為0.5~8小時、較佳為1~3小時。 The heating temperature may be a temperature which is equal to or higher than the curing temperature of the resin composition 130, and may be appropriately selected, and is usually 100 to 250 ° C, preferably 150 to 200 ° C. The heating time can be appropriately selected depending on the kind of the resin composition 130, and is usually 0.5 to 8 hours, preferably 1 to 3 hours.

又，在使樹脂組成物130硬化時，亦可加壓。加壓較佳係以0.1MPa以上、10MPa以下為較佳，0.5MPa以上、5MPa以下為更佳。 Further, when the resin composition 130 is cured, it may be pressurized. The pressure is preferably 0.1 MPa or more and 10 MPa or less, more preferably 0.5 MPa or more and 5 MPa or less.

藉此，可抑制樹脂組成物之硬化物中產生空隙(void)。加壓係以使用流體來進行為較佳，例如可列舉氮氣、氬氣、空氣等氣體。從廉價的觀點來看係以空氣為較佳，而從抑制樹脂組成物之氧化的觀點來看，係以氮氣為較佳。 Thereby, generation of voids in the cured product of the resin composition can be suppressed. The pressurization is preferably carried out using a fluid, and examples thereof include a gas such as nitrogen gas, argon gas or air. From the viewpoint of inexpensiveness, air is preferred, and from the viewpoint of suppressing oxidation of the resin composition, nitrogen is preferred.

作為藉由加壓流體進行加壓，同時使樹脂組成物130硬化之方法，例如可列舉在壓力容器內，設置加熱之處理對象物，然後在壓力容器內導入加壓流體並加壓，同時加熱處理對象物之方法；更具體而言，可列舉在加壓烘箱中設置處理對象物，在加壓烘箱內導入加壓用之氣體，同時利用加壓烘箱加熱處理對象物之方法。 As a method of hardening the resin composition 130 by pressurizing a pressurized fluid, for example, a heating target is placed in a pressure vessel, and then a pressurized fluid is introduced into the pressure vessel and pressurized, and heated. More specifically, a method of providing an object to be treated in a pressurized oven, introducing a gas for pressurization into a pressurized oven, and heating the object to be treated by a pressurized oven.

此外，本發明並不限定於上述實施形態，容許在未脫離該主旨之範圍的各種變形。 The present invention is not limited to the embodiments described above, and various modifications may be made without departing from the scope of the invention.

此外，上述實施形態及複數的變形例，可在其內容不互相違背的範圍進行組合。又，上述實施形態及變形例雖已具體說明各部之結構等，惟其結構可在滿足本發明之範圍進行各種變更。 Further, the above-described embodiments and the plural modifications can be combined in a range in which the contents do not contradict each other. Further, in the above-described embodiments and modifications, the configuration of each unit and the like have been specifically described, but the configuration thereof can be variously modified within the scope of the present invention.

<接著片> <Next piece>

其次，針對本發明之接著片作說明。 Next, an explanation will be given of the succeeding film of the present invention.

本發明之接著片之特徵為具有上述本發明之薄膜狀電極連接用樹脂組成物(以下亦稱為樹脂組成物)與基底薄膜。 The adhesive sheet of the present invention is characterized in that it has the resin composition for film-form electrode connection (hereinafter also referred to as a resin composition) of the present invention and a base film.

將本發明之接著片之一種形態示於圖4。在圖4中，接著片200係具有在基底薄膜202上形成有樹脂組成物201之結構者。 One form of the adhesive sheet of the present invention is shown in Fig. 4. In FIG. 4, the succeeding sheet 200 has a structure in which a resin composition 201 is formed on a base film 202.

本發明之接著片的形態並不限定於圖4所示者，例如亦可為在圖4中，於與積層有基底薄膜之一面為相反側的接著薄膜側表面，具有用於保護樹脂組成物表面之覆膜(cover film)者。 The form of the adhesive sheet of the present invention is not limited to that shown in Fig. 4, and may be, for example, a film-side surface on the opposite side to the one side of the laminated base film, in Fig. 4, for protecting the resin composition. The cover film of the surface.

基底薄膜202係例如在設置有複數的個別電極、個別電路之晶圓表面，積層接著片200(接著薄膜)時，作為接著薄膜之底層(支撐層)發揮功能者。 The base film 202 is, for example, a surface of a wafer on which a plurality of individual electrodes and individual circuits are provided, and when the laminate 200 (following a film) is laminated, functions as a bottom layer (support layer) of the film.

在此，基底薄膜之材料並未特別限定，而例如可列舉聚氯乙烯、聚偏二氯乙烯、聚苯乙烯、苯乙烯-丙烯腈共聚物、苯乙烯-丁二烯-丙烯腈共聚物、聚乙烯、高密度聚乙烯、聚丙烯、聚縮醛、聚乙烯醇、聚甲基丙烯酸甲酯、甲基丙烯酸-苯乙烯共聚物、乙酸纖維素、聚碳酸酯、聚酯、耐綸、乙烯-乙烯醇共聚物、乙烯-乙酸乙酯共聚物、聚對苯二甲酸丁二酯等樹脂材料等，而可使用此等之中的1種或2種以上之混合物。 Here, the material of the base film is not particularly limited, and examples thereof include polyvinyl chloride, polyvinylidene chloride, polystyrene, styrene-acrylonitrile copolymer, and styrene-butadiene-acrylonitrile copolymer. Polyethylene, high density polyethylene, polypropylene, polyacetal, polyvinyl alcohol, polymethyl methacrylate, methacrylic acid-styrene copolymer, cellulose acetate, polycarbonate, polyester, nylon, ethylene A resin material such as a vinyl alcohol copolymer, an ethylene-ethyl acetate copolymer or a polybutylene terephthalate, and the like, and one or a mixture of two or more of these may be used.

本發明之接著片係如上所述，可藉由在基底薄膜上塗布樹脂組成物清漆，之後在規定的溫度下乾燥至實質上不包含溶劑的程度為止而得到。而且，因應需要，亦可進一步作成在樹脂組成物上積層有覆蓋膠帶(cover tape)之形態。 As described above, the adhesive sheet of the present invention can be obtained by applying a resin composition varnish to a base film and then drying it at a predetermined temperature to such an extent that the solvent is not substantially contained. Further, if necessary, a form in which a cover tape is laminated on the resin composition may be further formed.

<切割膠帶一體型接著片> <Cutting tape integrated type sheet>

其次，針對本發明之切割膠帶一體型接著片作說明。 Next, the dicing tape-integrated sheet of the present invention will be described.

本發明之切割膠帶一體型接著片之特徵為具有上述本發明之接著片與切割膠帶。 The dicing tape-integrated sheet of the present invention is characterized by having the above-described sheet and dicing tape of the present invention.

將本發明之切割膠帶一體型接著片之一種形態示於圖5。在圖5中，切割膠帶一體型接著片210係具有在切割膠帶213上形成有接著片211之結構者。圖5所示之形態中，切割膠帶213係由切割膠帶之基材層213a、與切割膠帶之黏著層213b的2層所構成者，切割膠帶之黏著層213b與接著片211係以相接的方式積層。 One form of the dicing tape-integrated sheet of the present invention is shown in Fig. 5. In FIG. 5, the dicing tape-integrated squeegee 210 has a structure in which a squeegee tape 213 is formed with a squeegee 211. In the embodiment shown in Fig. 5, the dicing tape 213 is composed of two layers of a base material layer 213a of a dicing tape and an adhesive layer 213b of a dicing tape, and the adhesive layer 213b of the dicing tape and the adhesive sheet 211 are joined to each other. Way to layer.

本發明之切割膠帶一體型接著片的形態並不限定於圖5所示者，例如亦可作成在切割膠帶之黏著層213b與接著片211之間具有中間層之形態。此時，切割膠帶之黏著層係以黏著性高於中間層者為較佳。藉此，比起中間層對於接著片211之密合力，切割膠帶之黏著層對於中間層及基材層之密合力會變大。因此，在電子零件之製造步驟中，例如在如拾取半導體晶片步驟的電子零件之製造步驟中，可以在理應發生剝離的所欲界面(即中間 層與接著片之界面)發生剝離。 The form of the dicing tape-integrated back sheet of the present invention is not limited to those shown in Fig. 5. For example, it may be in the form of an intermediate layer between the adhesive layer 213b of the dicing tape and the adhesive sheet 211. At this time, it is preferable that the adhesive layer of the dicing tape is more adhesive than the intermediate layer. Thereby, the adhesion force of the adhesive layer of the dicing tape to the intermediate layer and the base material layer becomes larger than the adhesion force of the intermediate layer to the adhesive sheet 211. Therefore, in the manufacturing step of the electronic component, for example, in the manufacturing step of the electronic component such as the step of picking up the semiconductor wafer, the desired interface (ie, the middle) where peeling should be supposed to occur Peeling occurs between the layer and the interface of the sheet.

<切割膠帶> <cutting tape>

本發明之切割膠帶一體型接著片所使用之切割膠帶，可採用一般所使用的任何切割膠帶。 The dicing tape used for the dicing tape-integrated sheet of the present invention may be any dicing tape generally used.

切割膠帶之基材層213a的構成材料並未特別限定，而例如可列舉聚乙烯、聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、聚氯乙烯、氯乙烯共聚物、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚胺甲酸酯、乙烯-乙酸乙烯酯共聚物、離子聚合物、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、聚苯乙烯、乙烯基聚異戊二烯、聚碳酸酯、聚烯烴等，而可使用此等之中的1種或2種以上之混合物。 The constituent material of the base material layer 213a of the dicing tape is not particularly limited, and examples thereof include polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, and poly. Ethylene terephthalate, polybutylene terephthalate, polyurethane, ethylene-vinyl acetate copolymer, ionic polymer, ethylene-(meth)acrylic acid copolymer, ethylene-(methyl Acrylate copolymer, polystyrene, vinyl polyisoprene, polycarbonate, polyolefin, etc., and one type or a mixture of two or more types can be used.

切割膠帶之基材層213a的平均厚度並未特別限定，而以5~200μm者為較佳、30~150μm左右者為更佳。藉此，基材層成為具有適度剛性者，因此可確實地支撐接著片，使切割膠帶一體型接著片的操作變得容易，同時因切割膠帶一體型接著片會適度地彎曲，而可提高接著片與具有電極之被接著體之密合性。 The average thickness of the base material layer 213a of the dicing tape is not particularly limited, and is preferably 5 to 200 μm, more preferably 30 to 150 μm. In this way, since the base material layer has moderate rigidity, the adhesive sheet can be reliably supported, and the operation of the dicing tape-integrated adhesive sheet can be easily performed, and the dicing tape-integrated adhesive sheet can be appropriately bent, thereby improving the subsequent operation. The adhesion of the sheet to the adherend having the electrode.

切割膠帶之基材層213a的製法並未特別限定，而可使用壓延法、擠製成形法等一般的成形方法。在基材層213a之表面，係以露出與構成黏著層213b之材料反應的官能基，例如露出羥基或胺基等為較佳。又，為了提升基材層213a與黏著層213b之密合性，先以電暈處理或錨塗(anchor coating)等對於基材層213a之表面進行表面處理為較佳。 The method for producing the base material layer 213a of the dicing tape is not particularly limited, and a general molding method such as a calendering method or a extrusion molding method can be used. On the surface of the base material layer 213a, a functional group which reacts with a material constituting the adhesive layer 213b is exposed, for example, a hydroxyl group or an amine group is exposed, and the like. Moreover, in order to improve the adhesion between the base material layer 213a and the adhesive layer 213b, it is preferred to surface-treat the surface of the base material layer 213a by corona treatment or anchor coating.

又，切割膠帶之黏著層213b的構成材料並未特別限定，而例如可使用包含丙烯酸系黏著劑、橡膠系黏著劑等之樹脂組成物所構成者。 Moreover, the constituent material of the adhesive layer 213b of the dicing tape is not particularly limited, and for example, a resin composition containing an acrylic adhesive or a rubber-based adhesive can be used.

以丙烯酸系黏著劑而言，例如使用(甲基)丙烯酸及此等之酯所構成之樹脂、(甲基)丙烯酸及此等之酯和可與此等共聚合的不飽和單體(例如乙酸乙烯酯、苯乙烯、丙烯腈等)之共聚物等。又，亦可混合此等之共聚物2種類以上。 Examples of the acrylic adhesive include a resin composed of (meth)acrylic acid and such esters, (meth)acrylic acid, and the like, and an unsaturated monomer copolymerizable therewith (for example, acetic acid). a copolymer of vinyl ester, styrene, acrylonitrile, etc.). Further, two or more types of copolymers of these may be mixed.

此等之中又以選自由(甲基)丙烯酸甲酯、(甲基)丙烯酸乙基己酯及(甲基)丙烯酸丁酯所構成之群組的1種以上，與選自(甲基)丙烯酸羥基乙酯及乙酸乙烯酯之中的1種以上之共聚物為較佳。藉此，變得容易控制與切割膠帶之黏著層黏著之對象(例如上述之中間層、基材層等)的密合性或黏著性。 Among these, one or more selected from the group consisting of methyl (meth)acrylate, ethylhexyl (meth)acrylate, and butyl (meth)acrylate, and selected from (methyl) One or more copolymers of hydroxyethyl acrylate and vinyl acetate are preferred. Thereby, it becomes easy to control the adhesiveness or adhesiveness of the object adhered with the adhesive layer of the dicing tape (for example, the above-mentioned intermediate layer, a base material layer, etc.).

上述切割膠帶之黏著層213b的平均厚度並未特別限定，而以1μm~100μm左右者為較佳，尤其以3~20μm左右者為更佳。只要切割膠帶之黏著層213b的平均厚度在上述範圍內，即可確保切割膠帶之黏著層213b的形狀追隨性，進一步提高對於半導體晶圓等接著薄膜之被接著物的密合性。 The average thickness of the adhesive layer 213b of the dicing tape is not particularly limited, and is preferably from about 1 μm to about 100 μm, more preferably from about 3 to 20 μm. As long as the average thickness of the adhesive layer 213b of the dicing tape is within the above range, the shape followability of the adhesive layer 213b of the dicing tape can be ensured, and the adhesion to the adherend of the adhesive film such as a semiconductor wafer can be further improved.

上述切割膠帶之製造方法並未特別限定，而例如可藉由利用棒塗法、模具塗布法、凹版塗布法等，將黏著層213b塗布於切割膠帶之基材層213a上而製造。又，黏著層213b亦可在另外塗布於黏著層213b用基材上後，藉由積層等方法轉印於切割膠帶之基材層213a上而製造。 The method for producing the dicing tape is not particularly limited. For example, the adhesive layer 213b can be applied to the base material layer 213a of the dicing tape by a bar coating method, a die coating method, a gravure coating method, or the like. Further, the adhesive layer 213b may be separately applied onto the base material for the adhesive layer 213b, and then transferred to the base material layer 213a of the dicing tape by a method such as lamination.

當設置中間層時，可藉由在上述黏著層213b上進一步塗布中間層，亦可藉由積層中間層另外塗布於中間層用基材上者等方法而製造。 When the intermediate layer is provided, it may be produced by further coating an intermediate layer on the above-mentioned adhesive layer 213b, or by applying a laminated intermediate layer to a substrate for an intermediate layer.

又，本發明之切割膠帶一體型接著片，例如亦可藉由將具有基材層213a、黏著層213b及中間層之切割膠帶、與本發明之接著片(樹脂組成物+基底薄膜)，以上述中間層與接著片相接的方式積層而得。 Further, the dicing tape-integrated lining sheet of the present invention may be, for example, a dicing tape having a base material layer 213a, an adhesive layer 213b and an intermediate layer, and an adhesive sheet (resin composition + base film) of the present invention. The intermediate layer is laminated to the succeeding film.

<背面研磨膠帶一體型接著片> <Back grinding tape integrated type back sheet>

其次，針對本發明之背面研磨膠帶一體型接著片作說明。本發明之背面研磨膠帶一體型接著片之特徵為具有上述本發明之接著片與背面研磨膠帶。 Next, the back-grinding tape integrated type back sheet of the present invention will be described. The back grinding tape integrated type back sheet of the present invention is characterized by having the above-described back sheet and back grinding tape of the present invention.

上述背面研磨膠帶並未特別限定，而可列舉在基材單面形成有黏著劑層者。前述基材並未特別限定，而例如可列舉由聚對苯二甲酸乙二酯(PET)、聚乙烯(PE)、聚丙烯(PP)、乙烯-乙酸乙烯酯共聚物(EVA)等樹脂所構成者。 The back surface polishing tape is not particularly limited, and examples thereof include those in which an adhesive layer is formed on one surface of the substrate. The substrate is not particularly limited, and examples thereof include resins such as polyethylene terephthalate (PET), polyethylene (PE), polypropylene (PP), and ethylene-vinyl acetate copolymer (EVA). Constitute.

作為形成前述黏著劑層之黏著劑，並未特別限定，而以由含有聚合性低聚物，且藉由其進行聚合交聯而黏著力降低之黏著劑所構成為較佳。作為這種黏著劑，例如可列舉包含在分子內具有放射線聚合性的不飽和鍵而成之丙烯酸烷基酯系及/或甲基丙烯酸烷基酯系之聚合性聚合物、與放射線聚合性的多官能低聚物或單體作為主成分而成之光硬化型黏著劑等。 The adhesive for forming the pressure-sensitive adhesive layer is not particularly limited, and is preferably composed of an adhesive containing a polymerizable oligomer and having a reduced adhesive strength by polymerization crosslinking. As such an adhesive, for example, an alkyl acrylate-based and/or alkyl methacrylate-based polymerizable polymer having a radiation-polymerizable unsaturated bond in a molecule, and a radiation-polymerizable polymer can be used. A photocurable adhesive obtained by using a polyfunctional oligomer or a monomer as a main component.

前述聚合性聚合物，例如可藉由事先合成在分子內具有官能基之(甲基)丙烯酸系聚合物，使其與在分子內具有與前述官能基反應之官能基及放射線聚合性的不飽和鍵之化合物反應而得。此外，本說明書中之(甲基)丙烯酸系聚合物，係意指丙烯酸系聚合物及甲基丙烯酸系聚合物。 The polymerizable polymer can be synthesized, for example, by synthesizing a (meth)acrylic polymer having a functional group in a molecule, and having a functional group reactive with the aforementioned functional group in the molecule and radiation-polymerizable unsaturated. The compound of the bond is obtained by reaction. Further, the (meth)acrylic polymer in the present specification means an acrylic polymer and a methacrylic polymer.

前述光硬化型黏著劑，除了前述聚合性聚合物及前述多官能低聚物或單體以外，係以摻合光聚合起始劑為較佳。藉此，可藉由照射紫外線等活性光線，確實地降低黏著劑層與薄膜狀樹脂組成物層之界面的密合力，因此可以不在薄膜狀樹脂組成物層殘留黏著劑層之殘渣，而確實地剝離背面研磨膠帶。 The photocurable pressure-sensitive adhesive is preferably a photopolymerization initiator in addition to the polymerizable polymer and the polyfunctional oligomer or monomer. With this, it is possible to reliably reduce the adhesion between the adhesive layer and the film-form resin composition layer by irradiating the active light such as ultraviolet rays. Therefore, the residue of the adhesive layer can be left in the film-like resin composition layer, and the residue can be surely Peel off the back grinding tape.

上述背面研磨膠帶之製造方法並未特別限定，而例如可藉由利用棒塗法、模具塗布法、凹版塗布法等，在背面研磨膠帶之基材層上塗布黏著劑層而製造。又，黏著劑層亦可在另外塗布於黏著劑層形成用之基材上後，藉由積層等方法轉印於背面研磨膠帶之基材層上而製造。 The method for producing the back surface polishing tape is not particularly limited, and for example, it can be produced by applying an adhesive layer to a base material layer of a back surface polishing tape by a bar coating method, a die coating method, a gravure coating method, or the like. Further, the pressure-sensitive adhesive layer may be applied to a substrate for forming an adhesive layer, and then transferred to a base material layer of a back-grinding tape by lamination or the like.

藉由在如此所製作之背面研磨膠帶積層上述薄膜狀樹脂組成物，可製作背面研磨膠帶一體型接著片。 By laminating the film-like resin composition on the back surface polishing tape thus produced, a back-grinding tape-integrated film can be produced.

<背面研磨兼切割膠帶一體型接著片> <Back grinding and cutting tape integrated type back sheet>

其次，針對本發明之背面研磨兼切割膠帶一體型接著片作說明。 Next, the back-grinding and cutting tape integrated type back sheet of the present invention will be described.

本發明之背面研磨兼切割膠帶一體型接著片300係如圖6所示，由背面研磨膠帶兼切割膠帶301與薄膜狀樹脂組成物302所構成。雖未圖示，然而背面研磨膠帶兼切割膠帶301與薄膜狀樹脂組成物302之間，亦可設置脫模薄膜。藉此，背面研磨膠帶兼切割膠帶301與薄膜狀樹脂組成物302 之間的剝離變得容易，可提升切割半導體晶圓後之半導體元件的拾取性。 The back-grinding and dicing tape-integrated back sheet 300 of the present invention is composed of a back-side polishing tape and a dicing tape 301 and a film-like resin composition 302, as shown in Fig. 6 . Although not shown, a release film may be provided between the back surface polishing tape and the dicing tape 301 and the film-like resin composition 302. Thereby, the back grinding tape and the dicing tape 301 and the film-like resin composition 302 The peeling between them becomes easy, and the pick-up property of the semiconductor element after cutting the semiconductor wafer can be improved.

又，作為背面研磨膠帶兼切割膠帶301，只要是例如藉由聚乙烯、聚丙烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、聚酯、聚醯亞胺、聚對苯二甲酸乙二酯、聚氯乙烯、聚醯胺、聚胺甲酸酯等所製作之耐熱性或耐藥品性優異之薄膜即可使用。背面研磨膠帶兼切割膠帶301之厚度並未特別限定，而通常以30~500μm為較佳。 Further, the back-grinding tape and the dicing tape 301 are, for example, a polyolefin such as polyethylene or polypropylene, an ethylene-vinyl acetate copolymer, a polyester, a polyimide, or a polyethylene terephthalate. A film excellent in heat resistance or chemical resistance prepared by using polyvinyl chloride, polyamide, or a polyurethane can be used. The thickness of the back grinding tape and the dicing tape 301 is not particularly limited, but is usually preferably from 30 to 500 μm.

其次，針對本發明之背面研磨兼切割膠帶一體型接著片300的製造方法進行簡單說明。 Next, a method of manufacturing the back-grinding and dicing tape-integrated adhesive sheet 300 of the present invention will be briefly described.

薄膜狀樹脂組成物302係藉由混合可交聯反應的樹脂及具有助焊劑活性之化合物等，塗布於聚酯片等之剝離基材321上，以規定的溫度進行乾燥所得。藉由將其切半而得到圓形的薄膜狀樹脂組成物302。 The film-like resin composition 302 is applied onto a release substrate 321 such as a polyester sheet by mixing a resin capable of crosslinking reaction and a compound having flux activity, and is dried at a predetermined temperature. A circular film-like resin composition 302 was obtained by cutting it in half.

然後，藉由在其上積層背面研磨膠帶兼切割膠帶301，可得到背面研磨膠帶兼切割膠帶301、薄膜狀樹脂組成物302、剝離基材321所構成之附有背面研磨膠帶功能及附有切割膠帶功能之接著片300(圖7)。 Then, by laminating the back surface of the tape and the dicing tape 301 thereon, the back grinding tape and the dicing tape 301, the film-like resin composition 302, and the release substrate 321 are provided with the function of the back grinding tape and the cutting. The adhesive sheet 300 (Fig. 7).

如此所形成之背面研磨兼切割膠帶一體型接著片300的薄膜狀樹脂組成物302之厚度並未特別限定，而以3μm以上、100μm以下為較佳，尤其以5μm以上、50μm以下為進一步更佳。厚度若小於前述下限值，則有作為背面研磨兼切割膠帶一體型接著片300之效果降低之情形；而若大於前述上限值，則有難以製造製品、厚度精度降低之情形。 The thickness of the film-like resin composition 302 of the back-grinding and dicing tape-integrated sheet 300 thus formed is not particularly limited, and is preferably 3 μm or more and 100 μm or less, and more preferably 5 μm or more and 50 μm or less. . When the thickness is less than the above-described lower limit, the effect of the back-grinding and dicing tape-integrated adhesive sheet 300 may be lowered. When the thickness is larger than the above-mentioned upper limit, it may be difficult to manufacture a product and the thickness accuracy may be lowered.

當以10℃/分之升溫速度使背面研磨兼切割膠帶一體型接著片300之薄膜狀樹脂組成物302自常溫升溫至熔融狀態時，具有初期時熔融黏度減少，在到達最低熔融黏度後又再次上升之特性時前述最低熔融黏度並未特別限定，而以50,000Pa‧s以下為較佳、20,000Pa‧s以下為更佳、若為10,000Pa‧s以下則進一步更佳。又以0.1Pa‧s以上為較佳、1Pa‧s以上為更佳、若為10Pa‧s以上則進一步更佳。 When the film-like resin composition 302 of the back-grinding and dicing tape-integrated sheet 300 is heated from a normal temperature to a molten state at a temperature elevation rate of 10 ° C /min, the initial melt viscosity is reduced, and after reaching the lowest melt viscosity, again The minimum melt viscosity is not particularly limited, and is preferably 50,000 Pa ‧ or less, more preferably 20,000 Pa ‧ s or less, and even more preferably 10,000 Pa ‧ s or less. Further, it is preferably 0.1 Pa ‧ or more, more preferably 1 Pa ‧ s or more, and even more preferably 10 Pa ‧ s or more.

藉由將熔融黏度設為前述下限值以上，可抑制加熱時薄膜狀樹脂組成 物302自被接著物滲出所致之接著可靠性降低，亦可抑制滲出所致之周圍零件之污染。再者，亦可防止氣泡產生、上下電路基板之未填充等不良情形。再者，亦可防止焊料過於浸潤擴展，而造成相鄰電極間短路之問題。又，藉由設為前述上限值以下，在銲點凸塊與電路基板電極進行金屬接合時，由於銲點凸塊與電路基板電極間之樹脂被排除，因此可抑制接合不良。 By setting the melt viscosity to be equal to or higher than the above lower limit, the film-like resin composition during heating can be suppressed The subsequent deterioration of the material 302 due to the bleed out of the extrudate can also reduce the contamination of the surrounding parts caused by the bleed. Further, it is possible to prevent problems such as generation of bubbles and unfilling of the upper and lower circuit boards. Furthermore, it is also possible to prevent the solder from being excessively wetted and spread, resulting in a problem of short circuit between adjacent electrodes. Further, when the solder bumps are metal-bonded to the circuit board electrodes by the upper limit or less, the resin between the bump bumps and the circuit board electrodes is removed, so that the bonding failure can be suppressed.

薄膜狀樹脂組成物302之熔融黏度，例如可藉由以下的測定方法來求得。 The melt viscosity of the film-like resin composition 302 can be determined, for example, by the following measurement method.

將利用黏彈性測定裝置(RheoStress RS-10，HAAKE公司製)黏彈性測定裝置(Thermo Fisher Scientific公司製「MARS」)，以平行板20mmφ、間隙0.05mm、升溫速度10℃/min、頻率0.1Hz測定厚度100μm之薄膜狀樹脂組成物的熔融黏度成為最小之值作為測定值。 A viscoelasticity measuring device (RheoStress RS-10, manufactured by HAAKE Co., Ltd.) viscoelasticity measuring device ("MARS" manufactured by Thermo Fisher Scientific Co., Ltd.) was used, with a parallel plate of 20 mmφ, a gap of 0.05 mm, a temperature increase rate of 10 ° C/min, and a frequency of 0.1 Hz. The melt viscosity of the film-form resin composition having a thickness of 100 μm was measured to be the smallest value as a measured value.

薄膜狀樹脂組成物302並未特別限定，而以具有可辨識半導體元件表面之程度的透明性為較佳。藉此，可使晶片與基板接合時之校準變得容易。 The film-like resin composition 302 is not particularly limited, and is preferably transparent to the extent that the surface of the semiconductor element can be recognized. Thereby, the alignment at the time of bonding the wafer to the substrate can be facilitated.

更具體而言，薄膜狀樹脂組成物302之630nm的穿透率係以15%以上為較佳，尤其以25~100%為更佳。若穿透率在前述範圍內，則半導體元件的辨識率特別優異，可提升連接率。 More specifically, the film-like resin composition 302 has a transmittance of 630 nm of preferably 15% or more, more preferably 25 to 100%. When the transmittance is within the above range, the identification rate of the semiconductor element is particularly excellent, and the connection ratio can be improved.

(電子裝置之製造方法及電子裝置) (Manufacturing method and electronic device of electronic device)

其次，針對電子裝置之製造方法作說明。 Next, a description will be given of a method of manufacturing an electronic device.

剝離以上述方法所得之背面研磨兼切割膠帶一體型接著片300的剝離基材321，以薄膜狀樹脂組成物302與半導體晶圓303之功能面331相接的方式接著(圖8)。 The release substrate 321 of the back-grinding and dicing tape-integrated sheet 300 obtained by the above method is peeled off, and the film-like resin composition 302 is brought into contact with the functional surface 331 of the semiconductor wafer 303 (FIG. 8).

其次，將背面研磨膠帶兼切割膠帶301之上側的面(圖9中之上側)固定於研磨裝置的研磨台304。研磨裝置並未特別限定，而可使用市售物。在此，背面研磨後之半導體晶圓303的厚度並未特別限定，而以作成10μm~300μm左右為較佳、更佳為10μm以上100μm以下。 Next, the surface on the upper side of the back grinding tape and the dicing tape 301 (the upper side in FIG. 9) is fixed to the polishing table 304 of the polishing apparatus. The polishing apparatus is not particularly limited, and a commercially available product can be used. Here, the thickness of the semiconductor wafer 303 after the back surface polishing is not particularly limited, but is preferably about 10 μm to 300 μm, more preferably 10 μm or more and 100 μm or less.

本發明之背面研磨兼切割膠帶一體型接著片300，由於薄膜狀樹脂組成 物302係包含具有助焊劑活性之化合物的樹脂組成物，因此可直接積層於半導體晶圓303之功能面331。 The back grinding and cutting tape integrated type back sheet 300 of the present invention is composed of a film-like resin The substance 302 is a resin composition containing a compound having flux activity, and thus can be directly laminated on the functional surface 331 of the semiconductor wafer 303.

其次，將背面研磨後之半導體用晶圓303，以背面研磨膠帶兼切割膠帶301與切塊台(dicer table)305之頂面(圖10中之上側)相接的方式設置於切塊台305(圖10)。其次，在半導體晶圓303的周圍設置晶圓環306，以固定半導體晶圓303。然後，以刀片307切斷半導體晶圓303，將半導體晶圓303予以個片化而得到具有薄膜狀樹脂組成物302之半導體元件。此時，背面研磨兼切割膠帶一體型接著片300具有緩衝作用，防止切斷半導體晶圓303時之半導體元件的破裂、缺損等。此外，亦可在事先將半導體晶圓303及晶圓環306貼合於背面研磨兼切割膠帶一體型接著片300後，設置於切塊台305。 Next, the semiconductor wafer 303 after the back surface polishing is placed on the dicing station 305 so that the back surface polishing tape and the dicing tape 301 are in contact with the top surface (the upper side in FIG. 10) of the dicer table 305. (Figure 10). Next, a wafer ring 306 is disposed around the semiconductor wafer 303 to fix the semiconductor wafer 303. Then, the semiconductor wafer 303 is cut by the blade 307, and the semiconductor wafer 303 is sliced to obtain a semiconductor element having the film-like resin composition 302. At this time, the back surface polishing and dicing tape-integrated sheet 300 has a buffering function to prevent cracking, chipping, or the like of the semiconductor element when the semiconductor wafer 303 is cut. In addition, the semiconductor wafer 303 and the wafer ring 306 may be attached to the dicing table 305 after being bonded to the back surface polishing and dicing tape integrated type back sheet 300 in advance.

其次，以擴展裝置(expand device)延伸背面研磨兼切割膠帶一體型接著片300，使已個片化具有之薄膜狀樹脂組成物302的半導體元件彼此空出一定之間隔，之後進行拾取，並搭載於基板而得到電子裝置。 Then, the back surface polishing and dicing tape-integrated sheet 300 is extended by an expansion device, and the semiconductor elements having the film-form resin composition 302 having the sheet-like resin composition are spaced apart from each other at a predetermined interval, and then picked up and mounted. An electronic device is obtained on the substrate.

如此，本發明之背面研磨兼切割膠帶一體型接著片具有背面研磨膠帶功能與切割膠帶功能，並且因為接著劑層具有助焊劑活性而具有可省略助焊劑塗布步驟等之功能等。因此，不需要助焊劑洗淨步驟而生產性優異，並且可提升半導體晶圓之作業性。 As described above, the back-grinding and dicing tape-integrated back sheet of the present invention has a back-grinding tape function and a dicing tape function, and has a function of omitting a flux application step or the like because the adhesive layer has flux activity. Therefore, the flux cleaning step is not required and the productivity is excellent, and the workability of the semiconductor wafer can be improved.

[實施例] [Examples]

其次，針對本發明之實施例作說明。 Next, an embodiment of the present invention will be described.

在實施例、比較例中調製樹脂組成物所使用之原料如下。 The materials used in the preparation of the resin composition in the examples and comparative examples were as follows.

(A)具有萘骨架之多官能環氧樹脂 (A) Multifunctional epoxy resin with naphthalene skeleton

(a1)2官能萘型環氧樹脂(DIC股份有限公司製/「EPICLON HP-4770」)、環氧當量204 (a1) 2-functional naphthalene type epoxy resin ("EDCLON HP-4770", manufactured by DIC Co., Ltd.), epoxy equivalent 204

(a2)3官能萘型環氧樹脂(DIC股份有限公司製/「EPICLON HP-4750」)、 環氧當量188 (a2) 3-functional naphthalene type epoxy resin ("DICC Corporation" / "EPICLON HP-4750"), Epoxy equivalent 188

(a3)4官能萘型環氧樹脂(DIC股份有限公司製/「EPICLON HP-4700」)、環氧當量165 (a3) 4-functional naphthalene type epoxy resin ("EDCLON HP-4700" manufactured by DIC Corporation), epoxy equivalent 165

(B)在1分子中具有苯酚性羥基與羧基之化合物 (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule

(b1)酚酞(東京化成工業股份有限公司製) (b1) phenolphthalein (manufactured by Tokyo Chemical Industry Co., Ltd.)

(b2)二酚酸(東京化成工業股份有限公司製) (b2) Diphenolic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)

(b3)2-羥苯甲酸(東京化成工業股份有限公司製) (b3) 2-hydroxybenzoic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)

(C)薄膜形成性樹脂 (C) Film-forming resin

(c1)苯氧基樹脂(三菱化學股份有限公司製/「YX6954」)、數量平均分子量14000 (c1) phenoxy resin (Mitsubishi Chemical Co., Ltd. / "YX6954"), number average molecular weight 14000

其它 other

(d)雙酚F型環氧樹脂(三菱化學股份有限公司製/「jER806」)、環氧當量165 (d) bisphenol F type epoxy resin (manufactured by Mitsubishi Chemical Corporation, "jER806"), epoxy equivalent 165

(f)二氧化矽(Admatechs股份有限公司製/「SC1050-LC」)、平均粒徑0.25μm (f) cerium oxide (Admatechs Co., Ltd. / "SC1050-LC"), average particle size 0.25 μm

(g)酚醛清漆型苯酚樹脂(住友電木股份有限公司製/「PR-55617」)、羥基當量103 (g) Novolac type phenol resin ("Sumitomo Bakelite Co., Ltd. / "PR-55617"), hydroxyl equivalent 103

(h)2-苯基-4-甲基咪唑(四國化成工業股份有限公司製/「2P4MZ」) (h) 2-Phenyl-4-methylimidazole (manufactured by Shikoku Chemical Industry Co., Ltd. / "2P4MZ")

(i)偶聯劑(信越化學工業股份有限公司製/「KBE403」) (i) Coupling agent (Shin-Etsu Chemical Co., Ltd. / "KBE403")

(j)己二酸(關東化學股份有限公司製) (j) Adipic acid (made by Kanto Chemical Co., Ltd.)

<實施例1> <Example 1>

‧樹脂組成物之調製 ‧ Modulation of resin composition

作為(A)成分之「EPICLON HP-4770」6質量份、作為(B)成分之「酚酞」6質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」11.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分 比率50質量%之樹脂組成物清漆。 6 parts by mass of "EPICLON HP-4770" as the component (A), 6 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C), and the quality of "jER806" 24 11.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" are dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" is further mixed to prepare a solid component. A resin composition varnish having a ratio of 50% by mass.

將所得之樹脂組成物清漆以成為厚度50μm的方式塗布於聚酯薄膜基材(基底薄膜、帝人杜邦薄膜股份有限公司製、商品名：Purex A53)後，於100℃乾燥5分鐘以蒸發去除溶劑，得到厚度25μm之薄膜狀樹脂組成物。 The obtained resin composition varnish was applied to a polyester film substrate (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) so as to have a thickness of 50 μm, and then dried at 100 ° C for 5 minutes to evaporate and remove the solvent. A film-like resin composition having a thickness of 25 μm was obtained.

‧電子裝置之製作 ‧Electronic device production

準備上述所得之薄膜狀樹脂組成物、與在表面具有附有包含作為低熔點的導電性金屬之錫、銀的合金所構成之焊料的銅電極之半導體晶圓(尺寸200mmφ、個別電路之尺寸10mm×10mm、厚度100μm、電極之高度15μm、電極之寬度30μm、電極間之距離30μm)，利用真空積層機(名機股份有限公司製、MVLP)以100℃、0.8MPa、30秒鐘積層於半導體晶圓，得到附有薄膜狀樹脂組成物之半導體晶圓。 A semiconductor wafer having a film-form resin composition obtained as described above and a copper electrode having a solder having an alloy containing tin or silver as a conductive metal having a low melting point on the surface (dimensions: 200 mmφ, individual circuit size: 10 mm) ×10 mm, a thickness of 100 μm, a height of the electrode of 15 μm, a width of the electrode of 30 μm, and a distance between the electrodes of 30 μm, and a laminate of the semiconductor layer at 100° C., 0.8 MPa, and 30 seconds by a vacuum laminator (MVLP) The wafer is obtained as a semiconductor wafer with a film-like resin composition.

其次，在與半導體晶圓貼合有薄膜狀樹脂組成物之面相反的面上，利用積層機貼合切割膠帶。此時之貼合條件係以25℃、壓力0.8MPa、2mm/s，貼合附有薄膜狀樹脂組成物之半導體晶圓與切割膠帶。 Next, the dicing tape was bonded by a laminator on the surface opposite to the surface on which the film-like resin composition was bonded to the semiconductor wafer. The bonding conditions at this time were a semiconductor wafer and a dicing tape to which a film-like resin composition was attached at 25 ° C, a pressure of 0.8 MPa, and 2 mm/s.

然後，將切割膠帶固定於晶圓環，設置於切割機(dicing saw)(DFD6360、Disco(股)製)之切割台(dicing table)。再者，利用切割機，依據以下條件自附有薄膜狀樹脂組成物之半導體晶圓側切割(切斷)。藉此，將附有薄膜狀樹脂組成物之半導體晶圓予以個片化，得到以下切割尺寸之附有薄膜狀樹脂組成物之半導體晶片。 Then, the dicing tape was fixed to the wafer ring, and was set in a dicing table of a dicing saw (DFD6360, Disco). Further, the semiconductor wafer side to which the film-like resin composition was attached was cut (cut) by a cutter using the following conditions. Thereby, the semiconductor wafer with the film-like resin composition was sliced to obtain a semiconductor wafer having a film-like resin composition having the following cut dimensions.

≪切割條件≫ ≪Cutting conditions≫

切割尺寸：10mm×10mm正方 Cutting size: 10mm × 10mm square

切割速度：50mm/sec Cutting speed: 50mm/sec

轉軸轉速：40,000rpm Rotary shaft speed: 40,000 rpm

切割最大深度：0.13mm(自矽晶圓表面之切入量) Maximum cutting depth: 0.13mm (cutting from the surface of the wafer)

切割刀之厚度：15μm Cutting blade thickness: 15μm

利用倒裝晶片接合器(Panasonic股份有限公司製、FCB3)，將在前端具有由塗布有金與鎳之銅所構成之突起電極的矽製電路基板(尺寸200mmφ、厚度200μm、個別電路之尺寸12mm×12mm、電極之高度15μm、電極之寬度30μm、電極間之距離30μm)之突起電極與附有焊料之銅電極為抵接的方式，藉由以倒裝晶片接合器自動辨識附有薄膜狀樹脂組成物之半導體晶片之規定的調正標示(alignment mark)、與矽製電路基板之規定的調正標示來進行校準，在矽製電路基板加熱半導體晶片235℃、5秒鐘，使附有焊料之銅電極的焊料熔融而進行焊料連接。 A tantalum circuit board having a bump electrode made of copper coated with gold and nickel at the tip end (having a size of 200 mmφ, a thickness of 200 μm, and a size of an individual circuit of 12 mm) by a flip chip bonder (manufactured by Panasonic Corporation, FCB3) a projection electrode of ×12 mm, a height of the electrode of 15 μm, a width of the electrode of 30 μm, and a distance between electrodes of 30 μm) is in contact with the copper electrode with solder, and is automatically identified by a flip chip bonder with a film-like resin. The alignment mark of the semiconductor wafer of the composition is calibrated with a predetermined alignment mark of the circuit board, and the semiconductor wafer is heated at 235 ° C for 5 seconds on the circuit board to be soldered. The solder of the copper electrode is melted to perform solder connection.

然後，在180℃、60分鐘、0.8MPa之流體壓力(空氣壓力)的環境下加熱，使薄膜狀樹脂組成物硬化。 Then, it was heated in an environment of a fluid pressure (air pressure) of 180 ° C, 60 minutes, and 0.8 MPa to cure the film-like resin composition.

其次，在與矽製電路基板已搭載有半導體晶片之面相反側之面，利用積層機貼合切割膠帶。此時，貼合條件為25℃、壓力0.8MPa、2mm/s。 Next, the dicing tape was bonded to the surface opposite to the surface on which the semiconductor wafer was mounted on the circuit board. At this time, the bonding conditions were 25 ° C, a pressure of 0.8 MPa, and 2 mm/s.

然後，將切割膠帶固定於晶圓環，設置於切割機(DFD6360、Disco(股)製)之切割台。再者，利用切割機，依據以下條件切割(切斷)搭載之半導體晶片與半導體晶片之間。藉此，將搭載半導體晶片之矽製電路基板予以個片化，得到隔著薄膜狀樹脂組成物之硬化物而接著半導體晶片與矽製電路基板的以下切割尺寸之電子裝置(半導體裝置)。 Then, the dicing tape was fixed to the wafer ring and placed on a cutting table of a cutting machine (DFD6360, Disco). Further, the semiconductor wafer and the semiconductor wafer were mounted (cut) by a cutter using the following conditions. By this, the tantalum circuit board on which the semiconductor wafer is mounted is formed into a sheet, and an electronic device (semiconductor device) having the following cut size of the semiconductor wafer and the tantalum circuit board is obtained by the cured material of the film-form resin composition.

≪切割條件≫ ≪Cutting conditions≫

切割尺寸：12mm×12mm正方 Cutting size: 12mm × 12mm square

切割速度：50mm/sec Cutting speed: 50mm/sec

轉軸轉速：40,000rpm Rotary shaft speed: 40,000 rpm

切割最大深度：0.23mm(自矽晶圓表面之切入量) Maximum cutting depth: 0.23mm (cutting from the surface of the wafer)

切割刀之厚度：15μm Cutting blade thickness: 15μm

<實施例2> <Example 2>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4750」6質量份、作為(B)成分之「酚酞」 6質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」11.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 6 parts by mass of "EPICLON HP-4750" as the component (A) and "phenolphthalein" as the component (B) In addition to 2 parts by mass of "YX6954" as the component (C), 24 parts by mass of "jER806", 11.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" are dissolved. 50 parts by mass of "SC1050-LC" was further mixed with methyl ethyl ketone to prepare a resin composition varnish having a solid content ratio of 50% by mass.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例3> <Example 3>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」6質量份、作為(B)成分之「酚酞」6質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」11.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 6 parts by mass of "EPICLON HP-4700" as the component (A), 6 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 24 parts by mass of "jER806", 11.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例4> <Example 4>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」1質量份、作為(B)成分之「酚酞」6質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」21.7質量份、「PR-55617」19質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 1 part by mass of "EPICLON HP-4700" as the component (A), 6 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). 21.7 parts by mass of "jER806", 19 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例5> <Example 5>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」1質量份、作為(B)成分之「酚酞」25質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」21.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成 物清漆。 In the preparation of the resin composition, 1 part by mass of "EPICLON HP-4700" as the component (A), 25 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 21.7 parts by mass of "jER806", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed to prepare a solid content ratio of 50% by mass. Resin composition Varnish.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例6> <Example 6>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」20質量份、作為(B)成分之「酚酞」3質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」13質量份、「PR-55617」11.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 20 parts by mass of "EPICLON HP-4700" as the component (A), 3 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). 13 parts by mass of "jER806", 11.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例7> <Example 7>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」15質量份、作為(B)成分之「酚酞」15質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」6質量份、「PR-55617」11.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 15 parts by mass of "EPICLON HP-4700" as the component (A), 15 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). 6 parts by mass of "jER806", 11.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例8> <Example 8>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」0.5質量份、作為(B)成分之「酚酞」6質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」29.5質量份、「PR-55617」11.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 0.5 parts by mass of "EPICLON HP-4700" as the component (A), 6 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). 29.5 parts by mass of "jER806", 11.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例9> <Example 9>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」21質量份、作為(B)成分之「酚酞」6質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」9質量份、「PR-55617」11.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 21 parts by mass of "EPICLON HP-4700" as the component (A), 6 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). 9 parts by mass of "jER806", 11.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例10> <Example 10>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」6質量份、作為(B)成分之「酚酞」2質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」15.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 6 parts by mass of "EPICLON HP-4700" as the component (A), 2 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 24 parts by mass of "jER806", 15.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例11> <Example 11>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」2質量份、作為(B)成分之「酚酞」26質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」19.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 2 parts by mass of "EPICLON HP-4700" as the component (A), 26 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 19.7 parts by mass of "jER806", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed to prepare a solid content ratio of 50% by mass. Resin composition varnish.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例12> <Example 12>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」6質量份、作為(B)成分之「二酚 酸」6質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」11.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 6 parts by mass of "EPICLON HP-4700" as the component (A) and "diphenol" as the component (B) 6 parts by mass of the acid, and 2 parts by mass of "YX6954" as the component (C), 24 parts by mass of "jER806", 11.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 mass of "KBE403". The fraction was dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed to prepare a resin composition varnish having a solid content ratio of 50% by mass.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例13> <Example 13>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」6質量份、作為(B)成分之「2-羥苯甲酸」6質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」11.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 6 parts by mass of "EPICLON HP-4700" as the component (A), 6 parts by mass of "2-hydroxybenzoic acid" as the component (B), and "YX6954" as the component (C). In addition to 2 parts by mass, 24 parts by mass of "jER806", 11.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" are dissolved in methyl ethyl ketone, and then mixed with "SC1050-LC". 50 parts by mass of a resin composition varnish having a solid content ratio of 50% by mass.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例14> <Example 14>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」6質量份、作為(B)成分之「酚酞」4質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」13.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 6 parts by mass of "EPICLON HP-4700" as the component (A), 4 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 24 parts by mass of "jER806", 13.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例15> <Example 15>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」6質量份、作為(B)成分之「酚酞」5質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」12.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分 比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 6 parts by mass of "EPICLON HP-4700" as the component (A), 5 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 24 parts by mass of "jER806", 12.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. , modulating solid content A resin composition varnish having a ratio of 50% by mass.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例16> <Example 16>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」1質量份、作為(B)成分之「酚酞」17質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」5.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 1 part by mass of "EPICLON HP-4700" as the component (A), 17 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 24 parts by mass of "jER806", 5.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例17> <Example 17>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」1質量份、作為(B)成分之「酚酞」13.5質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」9.2質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 1 part by mass of "EPICLON HP-4700" as the component (A), 13.5 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 24 parts by mass of "jER806", 9.2 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例18> <Example 18>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」1質量份、作為(B)成分之「酚酞」11.5質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」11.2質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 1 part by mass of "EPICLON HP-4700" as the component (A), 11.5 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 24 parts by mass of "jER806", 11.2 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例19> <Example 19>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」1質量份、作為(B)成分之「酚酞」9質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」13.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 1 part by mass of "EPICLON HP-4700" as the component (A), 9 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 24 parts by mass of "jER806", 13.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例20> <Example 20>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」3質量份、作為(B)成分之「酚酞」12質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」8.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 3 parts by mass of "EPICLON HP-4700" as the component (A), 12 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 24 parts by mass of "jER806", 8.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<實施例21> <Example 21>

在樹脂組成物之調製中，作為(A)成分之「EPICLON HP-4700」6質量份、作為(B)成分之「酚酞」12質量份、作為(C)成分之「YX6954」2質量份以外，更將「jER806」24質量份、「PR-55617」5.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 6 parts by mass of "EPICLON HP-4700" as the component (A), 12 parts by mass of "phenolphthalein" as the component (B), and 2 parts by mass of "YX6954" as the component (C). Further, 24 parts by mass of "jER806", 5.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed. A resin composition varnish having a solid content ratio of 50% by mass was prepared.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<比較例1> <Comparative Example 1>

在樹脂組成物之調製中，使用「EPICLON HP-4770」15質量份作為(A)成分、不使用(B)成分、 使用「YX6954」2質量份作為(C)成分以外，更將「jER806」6質量份、「PR-55617」11.7質量份、「己二酸」15質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 15 parts by mass of "EPICLON HP-4770" is used as the component (A) and the component (B) is not used. 2 parts by mass of "YX6954" is used as the component (C), and 6 parts by mass of "jER806", 11.7 parts by mass of "PR-55617", 15 parts by mass of "adipic acid", and 0.1 parts by mass of "2P4MZ", "KBE403" 0.2 parts by mass was dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed to prepare a resin composition varnish having a solid content ratio of 50% by mass.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<比較例2> <Comparative Example 2>

在樹脂組成物之調製中，使用「EPICLON HP-4770」15質量份作為(A)成分、不使用(B)成分、使用「YX6954」2質量份作為(C)成分以外，更將「jER806」6質量份、「PR-55617」26.7質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, 15 parts by mass of "EPICLON HP-4770" is used as the component (A), the component (B) is not used, and 2 parts by mass of "YX6954" is used as the component (C), and "jER806" is further used. 6 parts by mass, 26.7 parts by mass of "PR-55617", 0.1 parts by mass of "2P4MZ", and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed to prepare a solid content ratio of 50. % by mass of resin composition varnish.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

<比較例3> <Comparative Example 3>

在樹脂組成物之調製中，不使用(A)成分、使用「酚酞」17.7質量份作為(B)成分、使用「YX6954」2質量份作為(C)成分以外，更將「jER806」30質量份、「2P4MZ」0.1質量份、「KBE403」0.2質量份溶解於甲基乙基酮，再混合「SC1050-LC」50質量份，調製固體成分比率50質量%之樹脂組成物清漆。 In the preparation of the resin composition, the component (A) is not used, 17.7 parts by mass of "phenolphthalein" is used as the component (B), and 2 parts by mass of "YX6954" is used as the component (C), and 30 parts by mass of "jER806" is further used. 0.1 parts by mass of "2P4MZ" and 0.2 parts by mass of "KBE403" were dissolved in methyl ethyl ketone, and 50 parts by mass of "SC1050-LC" was further mixed to prepare a resin composition varnish having a solid content ratio of 50% by mass.

此後係與實施例1同樣地進行而得到薄膜狀樹脂組成物及電子裝置。 Thereafter, the film-like resin composition and an electronic device were obtained in the same manner as in Example 1.

‧特性評價 ‧Feature evaluation

<連接性評價> <Connectivity Evaluation>

分別針對上述各實施例及比較例所得之電子裝置10個，利用數位萬用電表來測定半導體晶片與矽製電路基板之連接電阻值，基於連接電阻值，依據下述基準來判定評價結果。 For each of the electronic devices obtained in each of the above-described examples and comparative examples, the connection resistance value between the semiconductor wafer and the tantalum circuit board was measured by a digital multimeter, and the evaluation result was determined based on the following reference based on the connection resistance value.

[◎]：10個電子裝置之連接電阻值均為10Ω以下者。 [◎]: The connection resistance values of 10 electronic devices are all 10 Ω or less.

[○]：10個電子裝置之連接電阻值均大於10Ω、30Ω以下者。 [○]: The connection resistance values of all 10 electronic devices are all greater than 10 Ω and 30 Ω or less.

[×]：1個以上的電子裝置之連接電阻值大於30Ω者。 [×]: The connection resistance value of one or more electronic devices is greater than 30 Ω.

<絕緣可靠性評價> <Insulation reliability evaluation>

分別針對上述各實施例及比較例所得之電子裝置10個，在130℃、85%RH之環境下施加3V的電壓、同時處理200小時，藉由連續測定相鄰凸塊間之絕緣電阻值來評價。 For each of the electronic devices obtained in each of the above examples and comparative examples, a voltage of 3 V was applied in an environment of 130 ° C and 85% RH for 200 hours while continuously measuring the insulation resistance value between adjacent bumps. Evaluation.

依據下述基準來判定評價結果。 The evaluation result is judged based on the following criteria.

[◎]：200小時之處理下，10個電子裝置之絕緣電阻值均恆為1.0×107Ω以上者。 [◎]: Under the treatment of 200 hours, the insulation resistance values of the 10 electronic devices were always 1.0 × 10 7 Ω or more.

[○]：200小時之處理下，1個以上的電子裝置之絕緣電阻值為1.0×104Ω以上、小於1.0×107Ω者。 [○]: In the case of 200 hours of treatment, the insulation resistance value of one or more electronic devices is 1.0 × 10 4 Ω or more and less than 1.0 × 10 7 Ω.

[×]：200小時之處理下，1個以上的電子裝置之絕緣電阻值為小於1.0×104Ω者。 [×]: Under the treatment of 200 hours, the insulation resistance value of one or more electronic devices is less than 1.0×10 4 Ω.

<切割性評價> <Cutting evaluation>

對於依據上述電子裝置之製作所得之各實施例及比較例的附有薄膜狀樹脂組成物之半導體晶片，利用倒裝晶片接合器(Panasonic股份有限公司製、FCB3)來評價是否可以自動辨識位於半導體晶片之角落的調正標示。詳細而言，在相同條件下進行切割時，若為切割性良好的薄膜狀樹脂組成物，則邊緣部不會下傾(droop)，因此不會因為薄膜狀樹脂組成物發生傾斜或翹曲而造成光漫射，而可以自動辨識位於半導體晶片之角落的調正標示。 For a semiconductor wafer with a film-like resin composition according to each of the examples and the comparative examples produced by the above-described electronic device, a flip chip bonder (FCB3, manufactured by Panasonic Corporation) was used to evaluate whether or not the semiconductor wafer can be automatically identified. The alignment of the corners of the wafer. Specifically, when the film is formed under the same conditions, if the film-like resin composition having good cutting properties is not drooped at the edge portion, the film-like resin composition does not become inclined or warped. This causes light to diffuse and automatically recognizes the alignment marks at the corners of the semiconductor wafer.

另一方面，當為切割性差的薄膜狀樹脂組成物時，則會因切割時之刀片的壓力或與刀片之摩擦熱而使薄膜狀樹脂組成物之邊緣部下傾。因此，由於薄膜狀樹脂組成物發生傾斜或歪曲而造成光漫射，因而無法自動辨識位於半導體晶片之角落的調正標示。利用該現象，藉由評價是否可以自動辨識附有薄膜狀樹脂組成物之半導體晶片10個的調正標示，而進行切割性評價。依據下述基準來判定評價結果。 On the other hand, in the case of a film-like resin composition having poor dicing properties, the edge portion of the film-like resin composition is inclined downward due to the pressure of the blade at the time of cutting or the frictional heat with the blade. Therefore, since the film-like resin composition is inclined or warped to cause light diffusion, the alignment mark located at the corner of the semiconductor wafer cannot be automatically recognized. Using this phenomenon, the evaluation of the cutting property was performed by evaluating whether or not the alignment marks of the semiconductor wafers having the film-like resin composition were automatically recognized. The evaluation result is judged based on the following criteria.

[○]：附有薄膜狀樹脂組成物之半導體晶片10個之中，10個均可自動辨識。 [○]: Of the 10 semiconductor wafers with the film-like resin composition, 10 were automatically recognized.

[△]：附有薄膜狀樹脂組成物之半導體晶片10個之中，6個以上9個以下可自動辨識。 [△]: Among the ten semiconductor wafers with the film-like resin composition, six or more and nine or less are automatically recognized.

[×]：附有薄膜狀樹脂組成物之半導體晶片10個之中，5個以下可自動辨識。 [×]: Among the ten semiconductor wafers with a film-like resin composition, five or less are automatically recognized.

<薄膜性評價> <Thin film evaluation>

使用依據上述樹脂組成物之調製所得之各實施例及比較例的薄膜狀樹脂組成物，在25℃之環境下捲繞於直徑4mmφ之圓柱，評價薄膜狀樹脂組成物之破裂、缺損。依據下述基準來判定評價結果。 The film-like resin composition of each of the examples and the comparative examples obtained by the preparation of the above resin composition was wound around a cylinder having a diameter of 4 mmφ in an environment of 25 ° C, and cracks and defects of the film-form resin composition were evaluated. The evaluation result is judged based on the following criteria.

[○]：薄膜狀樹脂組成物完全未發生破裂、缺損。 [○]: The film-like resin composition was not broken or broken at all.

[×]：薄膜狀樹脂組成物之一部分發生破裂、缺損。 [×]: One of the film-like resin compositions is broken or defective.

<吸濕密合性評價> <Moisture absorption adhesion evaluation>

利用真空積層機(名機股份有限公司製、MVLP)，以100℃、0.8MPa、30秒鐘將依據上述樹脂組成物之調製所得之各實施例及比較例的薄膜狀樹脂組成物積層於形成有SiN膜之晶圓，利用切割來製作2mm正方的附有薄膜狀樹脂組成物之晶片。又，切割形成有SiN膜之其它晶圓以製作6mm正方的晶片，在該晶片之形成有SiN膜之面，以前述2mm正方的附有薄膜狀樹脂組成物之晶片相接於薄膜狀樹脂組成物的方式於120℃進行接著，此後以180℃加熱60分鐘，藉由使薄膜狀樹脂組成物硬化來製作評價用樣品各5個。將此等以60℃、60%、120小時處理後，在260℃之環境下測定每1水準5個之抗切強度(die shear strength)，得到其平均值。依據下述基準來判定評價結果。 The film-like resin composition of each of the examples and the comparative examples obtained by the preparation of the above resin composition was laminated at 100 ° C, 0.8 MPa, and 30 seconds by a vacuum laminator (manufactured by Nago Co., Ltd., MVLP). A wafer having a SiN film was cut to produce a 2 mm square wafer with a film-like resin composition. Further, another wafer on which a SiN film was formed was cut to form a 6 mm square wafer, and a wafer having a film-like resin composition of 2 mm square was bonded to a film-like resin on the surface of the wafer on which the SiN film was formed. The method of the material was carried out at 120 ° C, and thereafter heated at 180 ° C for 60 minutes, and five film samples for evaluation were prepared by curing the film-like resin composition. After treating at 60 ° C, 60%, and 120 hours, the die shear strength at 5 levels was measured in an environment of 260 ° C to obtain an average value. The evaluation result is judged based on the following criteria.

[○]：5個評價用樣品之抗切強度的平均值為5MPa以上。 [○]: The average value of the shear strength of the five evaluation samples was 5 MPa or more.

[△]：5個評價用樣品之抗切強度的平均值為2MPa以上、小於5MPa。 [△]: The average value of the shear strength of the five evaluation samples was 2 MPa or more and less than 5 MPa.

[×]：5個評價用樣品之抗切強度的平均值為小於2MPa。 [×]: The average value of the shear strength of the five evaluation samples was less than 2 MPa.

<溫度循環試驗後之龜裂評價> <Crack evaluation after temperature cycle test>

將依據上述電子裝置之製作所得之各實施例及比較例的電子裝置(半導體裝置)進行-55℃/30分鐘125℃/30分鐘、500次循環之溫度循環處理後， 以藉由截面研磨而可觀察到焊料連接部顯現之面的方式進行加工，觀察薄膜狀樹脂組成物部有無發生龜裂。依據下述基準來判定評價結果。 The electronic device (semiconductor device) of each of the examples and the comparative examples obtained by the above-described electronic device was subjected to -55 ° C / 30 minutes. After the temperature cycle treatment at 125 ° C / 30 minutes and 500 cycles, the surface of the solder joint portion was observed by cross-section polishing, and the presence or absence of cracking of the film-form resin composition portion was observed. The evaluation result is judged based on the following criteria.

[○]：在薄膜狀樹脂組成物部未發生龜裂。 [○]: No crack occurred in the film-form resin composition portion.

[×]：在薄膜狀樹脂組成物部之一部分發生龜裂。 [×]: Cracking occurred in one portion of the film-like resin composition portion.

將上述實施例及比較例中之樹脂組成物的摻合量以及電子裝置之評價結果示於表1~表3。 The blending amounts of the resin compositions in the above examples and comparative examples and the evaluation results of the electronic device are shown in Tables 1 to 3.

根據表1~3之結果，實施例1~21均為含有(A)成分、(B)成分、及(C)成分之樹脂組成物，且使用其之電子裝置均為連接性、絕緣可靠性優異者。 According to the results of Tables 1 to 3, Examples 1 to 21 are resin compositions containing the components (A), (B), and (C), and the electronic devices using the same are all of connectivity and insulation reliability. Excellent.

尤其實施例2~4、7、12、14、15、17~21中，(A)成分為3官能環氧樹脂及/或4官能環氧樹脂、(B)成分為在1分子中具備2個以上的苯酚性羥基與1個以上的羧基之化合物，同時樹脂組成物中之(A)成分之含量、(B)成分之含量、以及(A)成分與(B)成分之含有質量比率[(B)/(A)]在較佳的範圍，因此成為上述特性特別優異者。 In particular, in the examples 2 to 4, 7, 12, 14, 15, 17 to 21, the component (A) is a trifunctional epoxy resin and/or a tetrafunctional epoxy resin, and the component (B) is provided in one molecule. a compound having at least one phenolic hydroxyl group and one or more carboxyl groups, and a content of the component (A), a content of the component (B), and a mass ratio of the component (B) to the component (B) in the resin composition [ (B)/(A)] is in a preferable range, and therefore it is particularly excellent in the above characteristics.

另一方面，比較例1係未使用(B)成分而使用己二酸者，雖然可賦予助焊劑功能，然而由於不參與和環氧樹脂之反應的己二酸存在於樹脂組成物內，因此絕緣可靠性大幅降低。比較例2係未使用(B)成分者，而未能顯現助焊劑功能，連接性大幅降低。此外，比較例3係未使用(A)成分者，而由於耐熱性不足，因此絕緣可靠性大幅降低。 On the other hand, in Comparative Example 1, when adipic acid was used without using the component (B), although the function of the flux was imparted, since adipic acid which does not participate in the reaction with the epoxy resin was present in the resin composition, Insulation reliability is greatly reduced. In Comparative Example 2, the component (B) was not used, and the flux function was not exhibited, and the connectivity was drastically lowered. Further, in Comparative Example 3, the component (A) was not used, and since the heat resistance was insufficient, the insulation reliability was largely lowered.

(實施例22) (Example 22)

<接著片之製造> <Next film manufacturing>

使用實施例1之固體成分比率50質量%的樹脂組成物清漆，以在基材聚酯薄膜(基底薄膜、帝人杜邦薄膜公司製、商品名「Purex A53」，相當於此後的切割膠帶一體型接著片之覆膜)成為厚度50μm的方式塗布，於100℃乾燥5分鐘，得到形成有厚度25μm之薄膜狀樹脂組成物的接著片。 The resin composition varnish having a solid content ratio of 50% by mass of Example 1 was used in the base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name "Purex A53", which corresponds to the subsequent dicing tape integrated type. The film was applied so as to have a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a film having a film-like resin composition having a thickness of 25 μm.

<切割膠帶一體型接著片> <Cutting tape integrated type sheet>

(1)切割膠帶之中間層的形成 (1) Formation of the intermediate layer of the dicing tape

在事先進行脫模處理之厚度38μm的聚酯薄膜表面，以乾燥後之厚度成為10μm的方式，塗布共聚合丙烯酸2-乙基己酯30質量%與乙酸乙烯酯70質量%所得之重量平均分子量約300,000的共聚物100質量份、分子量約700之5官能丙烯酸酯單體45質量份、2,2-二甲氧基-2-苯基苯乙酮5質量份、與甲苯二異氰酸酯(日本聚胺甲酸酯工業公司製、商品名「CORONATE T-100」)3質量份之混合物，之後，於80℃乾燥5分鐘。然後，對於所得之 塗布膜照射紫外線500mJ/cm2，在聚酯薄膜上形成中間層。 The surface of the polyester film having a thickness of 38 μm which was subjected to release treatment in advance, and a weight average molecular weight of 30% by mass of copolymerized 2-ethylhexyl acrylate and 70% by mass of vinyl acetate was applied so as to have a thickness of 10 μm after drying. 100 parts by mass of a copolymer of about 300,000, 45 parts by mass of a 5-functional acrylate monomer having a molecular weight of about 700, 5 parts by mass of 2,2-dimethoxy-2-phenylacetophenone, and toluene diisocyanate (Japan poly A mixture of 3 parts by mass of a urethane industrial company product name "CORONATE T-100" was dried at 80 ° C for 5 minutes. Then, the obtained coating film was irradiated with ultraviolet rays of 500 mJ/cm 2 to form an intermediate layer on the polyester film.

(2)切割膠帶之黏著劑層的形成 (2) Formation of adhesive layer of dicing tape

調製混合有共聚合丙烯酸丁酯70質量%與丙烯酸2-乙基己酯30質量%所得之重量平均分子量約500,000之共聚物100質量份、與甲苯二異氰酸酯(日本聚胺甲酸酯工業公司製、商品名「CORONATE T-100」)3質量份之切割膠帶之黏著劑層用清漆。在事先進行脫模處理之厚度38μm的聚酯薄膜表面，以乾燥後之厚度成為10μm的方式塗布上述切割膠帶之黏著層用清漆，之後，於80℃乾燥5分鐘。然後，在聚酯薄膜上形成切割膠帶之黏著層。之後，將厚度100μm之聚乙烯片積層(laminate)於與上述聚酯薄膜相反側面的黏著劑層側作為切割膠帶之基材層，得到切割膠帶。 100 parts by mass of a copolymer having a weight average molecular weight of about 500,000 obtained by copolymerizing 70% by mass of a copolymerized butyl acrylate and 30% by mass of 2-ethylhexyl acrylate, and toluene diisocyanate (manufactured by Nippon Polyurethane Co., Ltd.) The product name "CORONATE T-100" is a varnish for the adhesive layer of 3 parts by mass of the dicing tape. The surface of the polyester film having a thickness of 38 μm which was subjected to release treatment in advance was applied with the varnish for the adhesive layer of the dicing tape so as to have a thickness of 10 μm after drying, and then dried at 80 ° C for 5 minutes. Then, an adhesive layer of a dicing tape is formed on the polyester film. Thereafter, a polyethylene sheet having a thickness of 100 μm was laminated on the side of the adhesive layer on the side opposite to the above-mentioned polyester film as a base material layer of the dicing tape to obtain a dicing tape.

(3)切割膠帶一體型接著片之製造 (3) Manufacture of cutting tape integrated type back sheet

以中間層與薄膜狀樹脂組成物相接的方式積層形成有中間層之薄膜、與上述所得之接著片，得到第1積層體。 A film in which an intermediate layer is formed and a back sheet obtained as described above is laminated so that the intermediate layer is in contact with the film-like resin composition, to obtain a first laminate.

其次，利用輥狀模具，將上述第1積層體衝孔為大於半導體晶圓之外徑、且小於晶圓環之內徑，之後，去除不要的部分，得到第2積層體。 Next, the first laminate body is punched by the roll mold to be larger than the outer diameter of the semiconductor wafer and smaller than the inner diameter of the wafer ring, and then the unnecessary portion is removed to obtain the second laminate.

再者，剝離位於切割膠帶之黏著層的其中一面側之聚酯薄膜、與位於上述第2積層體的中間層側之聚酯薄膜。然後，以上述第2積層體之中間層與切割膠帶之黏著劑層相接的方式，積層此等。藉此，得到依序積層有切割膠帶之基材層、切割膠帶之黏著劑層、中間層、薄膜狀樹脂組成物、覆膜之切割膠帶一體型接著片。 Further, the polyester film on one side of the adhesive layer of the dicing tape and the polyester film on the side of the intermediate layer of the second layered body are peeled off. Then, the intermediate layer of the second layered body is laminated to the adhesive layer of the dicing tape to laminate the layers. Thereby, a dicing tape-integrated sheet in which a base material layer of a dicing tape, an adhesive layer of a dicing tape, an intermediate layer, a film-like resin composition, and a film are laminated in this order is obtained.

<電子裝置之製造> <Manufacture of electronic devices>

作為本發明之電子裝置，使用上述所得之本發明之切割膠帶一體型接著片，依據下述流程製作電子裝置。 As the electronic device of the present invention, an electronic device was produced in accordance with the following procedure using the dicing tape-integrated adhesive sheet of the present invention obtained as described above.

準備在表面具有附有包含作為低熔點的導電性金屬之錫、銀的合金所構成之焊料的銅電極之半導體晶圓(尺寸200mmφ、個別電路之尺寸10mm×10mm、厚度100μm、電極之高度15μm、電極之寬度30μm、電極間之距離30μm)。 A semiconductor wafer having a copper electrode having a solder containing an alloy of tin or silver as a conductive metal having a low melting point (having a size of 200 mmφ, a size of an individual circuit of 10 mm × 10 mm, a thickness of 100 μm, and a height of an electrode of 15 μm) The width of the electrode is 30 μm and the distance between the electrodes is 30 μm).

自切割膠帶一體型接著片剝離覆膜，以其剝離面與半導體晶圓之具有附有焊料之銅電極之面相接的方式，積層切割膠帶一體型接著片與半導體晶圓。將其利用積層機，以貼合溫度80℃、對於切割膠帶一體型接著片施加壓力0.8MPa、30秒鐘之條件下進行積層，得到附有切割膠帶一體型接著片之半導體晶圓。 The self-cut tape-integrated film is peeled off from the film, and the dicing tape-integrated film and the semiconductor wafer are laminated so that the peeling surface thereof is in contact with the surface of the semiconductor wafer having the solder-attached copper electrode. This was laminated with a laminating machine at a bonding temperature of 80 ° C and a pressure of 0.8 MPa for 30 seconds on a dicing tape-integrated sheet to obtain a semiconductor wafer with a dicing tape-integrated sheet.

然後，利用切割機(Disco公司製、DFD6360)，依據下述條件自半導體晶圓側切割(切斷)該附有切割膠帶一體型接著片之半導體晶圓。藉此將半導體晶圓個片化，得到下述切割尺寸之半導體晶片。此外，藉由該切割所形成之切口，其前端到達中間層內。 Then, a semiconductor wafer with a dicing tape-integrated back sheet was cut (cut) from the side of the semiconductor wafer by a dicing machine (Disco 6360, manufactured by Disco Corporation) under the following conditions. Thereby, the semiconductor wafer is sliced to obtain a semiconductor wafer having the following cut size. Further, the slit formed by the cutting has its leading end reaching the intermediate layer.

<切割條件> <Cutting conditions>

切割尺寸：10mm×10mm正方 Cutting size: 10mm × 10mm square

切割速度：50mm/sec Cutting speed: 50mm/sec

轉軸轉速：40,000rpm Rotary shaft speed: 40,000 rpm

切割最大深度：0.130mm(自矽晶圓表面之切入量) Maximum cutting depth: 0.130mm (cutting from the wafer surface)

切割刀之厚度：15μm Cutting blade thickness: 15μm

然後，以頂針自切割膠帶一體型接著片之支撐薄膜側(切割膠帶之基材層側)頂出1個半導體晶片，以固晶機(die bonder)之吸嘴(collet)吸附所頂出之半導體晶片的表面，同時升至上方。藉此，拾取附有接著片之半導體晶片。 Then, a thimble is used to eject a semiconductor wafer from the support film side of the dicing tape-integrated sheet (the substrate layer side of the dicing tape), and the ejector is sucked by a die bonder. The surface of the semiconductor wafer is raised to the top at the same time. Thereby, the semiconductor wafer with the adhesive sheet attached is picked up.

其次，利用倒裝晶片接合器(Panasonic股份有限公司製、FCB3)，藉由利用倒裝晶片接合器來自動辨識在前端具有由塗布有金與鎳之銅所構成之突起電極的矽製電路(尺寸200mmφ、個別電路之尺寸12mm×12mm、厚度200μm、電極之高度15μm、電極之寬度30μm、電極間之距離30μm)之突起電極、附有接著片之半導體晶片之規定的調正標示與矽製電路基板之規定的調正標示來進行校準，在矽製電路基板加熱半導體晶片235℃、5秒鐘，使銲點凸塊之焊料熔融而進行焊料連接。然後，在180℃、60分鐘、0.8MPa之流體壓力(空氣壓力)的環境下加熱，使薄膜狀樹脂組成物硬化，得到利用接著薄膜之硬化物接著有半導體晶片與矽製電路基板之電子裝置。 Next, a flip chip bonder (FCB3, manufactured by Panasonic Co., Ltd.) was used to automatically identify a tantalum circuit having a bump electrode made of copper coated with gold and nickel at the tip end by using a flip chip bonder ( a projection electrode having a size of 200 mmφ, a size of an individual circuit of 12 mm × 12 mm, a thickness of 200 μm, a height of the electrode of 15 μm, a width of the electrode of 30 μm, and a distance between electrodes of 30 μm, and a prescribed alignment mark of the semiconductor wafer with the adhesive sheet and the control The predetermined alignment mark of the circuit board was used for calibration, and the semiconductor wafer was heated at 235 ° C for 5 seconds on the circuit board, and the solder of the bump bumps was melted to perform solder connection. Then, it is heated in an environment of a fluid pressure (air pressure) of 180 ° C, 60 minutes, and 0.8 MPa to cure the film-like resin composition, thereby obtaining an electronic device using a cured film of the film followed by a semiconductor wafer and a circuit board. .

其次，在與矽製電路基板搭載有半導體晶片之面相反側之面，利用積層機貼合切割膠帶。此時，貼合條件為25℃、壓力0.8MPa、2mm/s。 Next, the dicing tape was bonded by a laminator on the surface opposite to the surface on which the semiconductor wafer was mounted on the circuit board. At this time, the bonding conditions were 25 ° C, a pressure of 0.8 MPa, and 2 mm/s.

然後，將切割膠帶固定於晶圓環，設置於切割機(DFD6360、Disco(股)製)之切割台。再者，利用切割機，依據以下條件切割(切斷)搭載之半導體晶片與半導體晶片之間。藉此，將搭載半導體晶片之矽製電路基板予以個片化，得到隔著薄膜狀樹脂組成物之硬化物而接著有半導體晶片與矽製電路基板的以下切割尺寸之電子裝置(半導體裝置)。 Then, the dicing tape was fixed to the wafer ring and placed on a cutting table of a cutting machine (DFD6360, Disco). Further, the semiconductor wafer and the semiconductor wafer were mounted (cut) by a cutter using the following conditions. In this way, the tantalum circuit board on which the semiconductor wafer is mounted is formed into a sheet, and an electronic device (semiconductor device) having the following cut dimensions of the semiconductor wafer and the tantalum circuit board is obtained by the cured product of the film-like resin composition.

≪切割條件≫ ≪Cutting conditions≫

切割尺寸：12mm×12mm正方 Cutting size: 12mm × 12mm square

切割速度：50mm/sec Cutting speed: 50mm/sec

轉軸轉速：40,000rpm Rotary shaft speed: 40,000 rpm

切割最大深度：0.23mm(自矽晶圓表面之切入量) Maximum cutting depth: 0.23mm (cutting from the surface of the wafer)

切割刀之厚度：15μm Cutting blade thickness: 15μm

使用切割膠帶一體型接著片來製作電子裝置，並且毫無問題地完成切割。又，所製作之電子裝置亦毫無問題地運作。又，實施絕緣可靠性之評價，呈現「○」之良好的結果。 The electronic device was fabricated using a dicing tape-integrated adhesive sheet, and the cutting was completed without any problem. Moreover, the electronic device produced operates without problems. Moreover, the evaluation of the insulation reliability was carried out, and a good result of "○" was exhibited.

(實施例23) (Example 23)

<接著片之製造> <Next film manufacturing>

使用實施例1之固體成分比率50質量%之樹脂組成物清漆，以在基材聚酯薄膜(基底薄膜、帝人杜邦薄膜公司製、商品名「Purex A53」，相當於此後的背面研磨膠帶一體型接著片之覆膜)成為厚度50μm的方式塗布，於100℃乾燥5分鐘，得到形成有厚度25μm之薄膜狀樹脂組成物的接著片。 The resin composition varnish having a solid content ratio of 50% by mass of Example 1 was used in a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name "Purex A53", which corresponds to the back surface grinding tape integrated type) Then, the film of the sheet was applied so as to have a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a film having a film-like resin composition having a thickness of 25 μm.

<背面研磨膠帶一體型接著片> <Back grinding tape integrated type back sheet>

(1)背面研磨膠帶一體型接著片之製造 (1) Manufacture of back-grinding tape integrated type back sheet

將作為基底樹脂之丙烯酸烷基酯系共聚合物Nissetsu KP-2254E(Nippon Carbide Industries製)44質量份、胺甲酸酯丙烯酸酯HC-15(大日精化工業 製)45質量份、異氰酸酯系交聯劑CORONATE L(日本聚胺甲酸酯工業製)8質量份、光聚合起始劑IRGACURE 651(BASF Japan製)3質量份溶解於乙酸乙酯，調製背面研磨膠帶之黏著劑層用清漆。 44 parts by mass of an alkyl acrylate-based copolymer Nissetsu KP-2254E (manufactured by Nippon Carbide Industries) as a base resin, and a urethane acrylate HC-15 (Daily Seika Chemical Industry Co., Ltd.) 45 parts by mass, 8 parts by mass of an isocyanate-based crosslinking agent CORONATE L (manufactured by Nippon Polyurethane Co., Ltd.), and 3 parts by mass of a photopolymerization initiator IRGACURE 651 (manufactured by BASF Japan) were dissolved in ethyl acetate to prepare a back surface. The adhesive layer of the abrasive tape is varnished.

在事先進行脫模處理之厚度38μm的聚酯薄膜表面，以乾燥後之厚度成為10μm的方式塗布上述背面研磨膠帶之黏著劑層用清漆，之後，於80℃乾燥5分鐘。然後，在聚酯薄膜上形成背面研磨膠帶之黏著劑層。之後，將作為背面研磨膠帶之基材層的厚度120μm之由聚乙烯與乙烯-乙酸乙烯酯共聚物(EVA)所構成之薄膜積層(laminate)於與上述聚酯薄膜相反側面之黏著劑層側，藉由使黏著劑層轉印至由聚乙烯與乙烯-乙酸乙烯酯共聚物(EVA)所構成之薄膜，得到背面研磨膠帶。 The surface of the polyester film having a thickness of 38 μm which was subjected to release treatment in advance was applied with the varnish for the adhesive layer of the back surface polishing tape so that the thickness after drying was 10 μm, and then dried at 80 ° C for 5 minutes. Then, an adhesive layer of the back grinding tape is formed on the polyester film. Thereafter, a film made of polyethylene and ethylene-vinyl acetate copolymer (EVA) having a thickness of 120 μm as a base material layer of the back grinding tape was laminated on the side of the adhesive layer opposite to the side of the above polyester film. The back grinding tape was obtained by transferring the adhesive layer to a film composed of polyethylene and ethylene-vinyl acetate copolymer (EVA).

其次，利用輥狀模具，將上述接著片衝孔為與半導體晶圓同等之大小，之後去除不要的部分後，藉由以上述所得之背面研磨膠帶之黏著劑層與薄膜狀樹脂組成物相接的方式積層，得到依序積層有背面研磨膠帶之基材、背面研磨膠帶之黏著劑層、薄膜狀樹脂組成物、覆膜之背面研磨膠帶一體型接著片。 Next, the above-mentioned succeeding sheet is punched into a size equivalent to that of the semiconductor wafer by a roll-shaped mold, and then the unnecessary portion is removed, and then the adhesive layer of the back-grinding tape obtained as described above is bonded to the film-like resin composition. In the manner of laminating, a base material having a back grinding tape, an adhesive layer of a back grinding tape, a film-like resin composition, and a back-grinding tape-integrated film of a film are sequentially obtained.

(2)電子裝置之製作 (2) Production of electronic devices

作為本發明之電子裝置，使用上述所得之背面研磨膠帶一體型接著片，依據下述流程製作電子裝置。 As the electronic device of the present invention, an electronic device was produced in accordance with the following procedure using the back-grinding tape integrated type back sheet obtained above.

準備在表面具有附有包含作為低熔點的導電性金屬之錫、銀的合金所構成之焊料的銅電極之半導體晶圓(尺寸200mmφ、個別電路之尺寸10mm×10mm、厚度725μm、電極之高度15μm、電極之寬度30μm、電極間之距離30μm)。 A semiconductor wafer having a copper electrode having a solder containing an alloy of tin or silver as a conductive metal having a low melting point (having a size of 200 mmφ, a size of an individual circuit of 10 mm × 10 mm, a thickness of 725 μm, and a height of an electrode of 15 μm) The width of the electrode is 30 μm and the distance between the electrodes is 30 μm).

自背面研磨膠帶一體型接著片剝離覆膜，以其剝離面與半導體晶圓具有附有焊料之銅電極之面相接的方式，積層背面研磨膠帶一體型接著片與半導體晶圓，得到附有背面研磨膠帶一體型接著片之半導體晶圓。 The back-grinding tape-integrated adhesive sheet is peeled off from the back surface, and the back surface of the back surface is bonded to the semiconductor wafer so that the peeling surface is in contact with the surface of the semiconductor wafer having the solder-attached copper electrode. Backside abrasive tape integrated type of semiconductor wafer.

然後，研磨該附有背面研磨膠帶一體型接著片之半導體晶圓之與貼附 有背面研磨膠帶一體型接著片之面相反側之面，以附有背面研磨膠帶一體型接著片之半導體晶圓之厚度成為200μm的方式研磨。之後，在附有背面研磨膠帶一體型接著片之半導體晶圓之與貼附有背面研磨膠帶一體型接著片之面相反側之面(研磨面)積層切割膠帶後，自背面研磨膠帶一體型接著片之黏著劑層與薄膜狀樹脂組成物之界面剝離背面研磨膠帶。 Then, grinding and attaching the semiconductor wafer with the back-grinding tape integrated type back sheet The surface of the back side of the back surface of the integrated type of the backing tape was polished so that the thickness of the semiconductor wafer with the back surface polishing tape integrated type back sheet was 200 μm. After that, the dicing tape is laminated on the surface (polishing surface) on the opposite side to the surface on which the back-grinding tape-integrated sheet is attached, and the back-grinding tape is integrated. The back-grinding tape is peeled off from the interface between the adhesive layer of the sheet and the film-like resin composition.

之後，切割半導體晶圓，得到附有薄膜狀樹脂組成物之半導體晶片。利用所得之附有薄膜狀樹脂組成物之半導體晶片，與實施例22同樣地製作電子裝置，並且實施同樣的評價。 Thereafter, the semiconductor wafer is diced to obtain a semiconductor wafer with a film-like resin composition. An electronic device was produced in the same manner as in Example 22 using the obtained semiconductor wafer with the film-like resin composition, and the same evaluation was carried out.

(評價結果) (Evaluation results)

使用背面研磨膠帶一體型接著片，製作電子裝置，毫無問題地完成晶圓背面之研磨及切割。又，所製作之電子裝置亦毫無問題地運作。又，實施絕緣可靠性之評價，呈現「○」之良好的結果。 The back surface of the wafer is polished and cut without any problem by using an back-grinding tape-integrated sheet to fabricate an electronic device. Moreover, the electronic device produced operates without problems. Moreover, the evaluation of the insulation reliability was carried out, and a good result of "○" was exhibited.

(實施例24) (Example 24)

1.背面研磨兼切割膠帶一體型接著片之製造 1. Back-grinding and cutting tape-integrated sheet manufacturing

使用實施例1之固體成分比率50質量%之樹脂組成物清漆，以成為厚度50μm的方式塗布於聚酯薄膜基材(基底薄膜、帝人杜邦薄膜股份有限公司製、商品名：Purex A53，相當於此後的背面研磨兼切割膠帶一體型接著片之覆膜)後，於100℃乾燥5分鐘以蒸發去除溶劑，得到厚度25μm之薄膜狀樹脂組成物。 The resin composition varnish having a solid content ratio of 50% by mass of Example 1 was applied to a polyester film substrate (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53, equivalent to a thickness of 50 μm. Thereafter, the back surface polishing and the dicing tape-integrated film were coated, and the mixture was dried at 100 ° C for 5 minutes to evaporate the solvent to obtain a film-like resin composition having a thickness of 25 μm.

利用擠製機使Clear Tec CT-H717(Kuraray公司製)形成厚度100μm之薄膜，對於表面進行電暈處理，得到基材薄膜。其次，以乾燥後之厚度成為10μm的方式，在已進行脫模處理之厚度38μm的聚酯薄膜塗布共聚合丙烯酸2-乙基己酯50質量份、丙烯酸丁酯10質量份、乙酸乙烯酯37質量份、甲基丙烯酸2-羥基乙酯3質量份所得之重量平均分子量500,000之共聚物，於80℃乾燥5分鐘，得到黏著劑層。之後，藉由將該黏著劑層積層於上述基材薄膜之電暈處理面以轉印黏著劑層後，剝離聚酯薄膜基材。其次，僅將上述薄膜狀樹脂組成物(僅殘留與晶圓接合之部分)切半，以薄膜狀樹脂組 成物與黏著劑層接合的方式貼附。藉此，得到依序由基材薄膜、黏著劑層、薄膜狀樹脂組成物、覆膜所構成之背面研磨兼切割膠帶一體型接著片。 A film having a thickness of 100 μm was formed by a Clear Tec CT-H717 (manufactured by Kuraray Co., Ltd.) using an extruder, and the surface was subjected to corona treatment to obtain a substrate film. Next, 50 parts by mass of copolymerized 2-ethylhexyl acrylate, 10 parts by mass of butyl acrylate, and vinyl acetate 37 were applied to a polyester film having a thickness of 38 μm which had been subjected to mold release treatment so that the thickness after drying was 10 μm. A copolymer of a mass average molecular weight of 500,000 obtained by mass fraction of 2-hydroxyethyl methacrylate of 3 parts by mass was dried at 80 ° C for 5 minutes to obtain an adhesive layer. Thereafter, the adhesive film is laminated on the corona-treated surface of the base film to transfer the adhesive layer, and then the polyester film substrate is peeled off. Next, only the film-form resin composition (only the portion where the wafer is bonded) is cut in half to form a film-like resin group. The product is attached to the adhesive layer. Thereby, a back-grinding and dicing tape-integrated adhesive sheet comprising a base film, an adhesive layer, a film-like resin composition, and a film in this order was obtained.

(電子裝置之製造) (Manufacture of electronic devices)

作為本發明之電子裝置，使用上述所得之背面研磨膠帶一體型接著片，依據下述流程製作電子裝置。 As the electronic device of the present invention, an electronic device was produced in accordance with the following procedure using the back-grinding tape integrated type back sheet obtained above.

準備在表面具有附有包含作為低熔點的導電性金屬之錫、銀的合金所構成之焊料的銅電極之半導體晶圓(尺寸200mmφ、個別電路之尺寸10mm×10mm、厚度725μm、電極之高度15μm、電極之寬度30μm、電極間之距離30μm)。 A semiconductor wafer having a copper electrode having a solder containing an alloy of tin or silver as a conductive metal having a low melting point (having a size of 200 mmφ, a size of an individual circuit of 10 mm × 10 mm, a thickness of 725 μm, and a height of an electrode of 15 μm) The width of the electrode is 30 μm and the distance between the electrodes is 30 μm).

剝離背面研磨兼切割膠帶一體型接著片之覆膜，在半導體晶圓具有附有焊料之銅電極之面以溫度90℃、壓力0.3MPa貼附薄膜狀樹脂組成物，得到附有背面研磨兼切割膠帶一體型接著片之半導體晶圓。 The back-grinding and dicing tape-integrated film was peeled off, and a film-like resin composition was attached to the surface of the semiconductor wafer having the solder-attached copper electrode at a temperature of 90 ° C and a pressure of 0.3 MPa to obtain a back-grinding and cutting. Tape-integrated semiconductor wafer.

然後，將背面研磨兼切割膠帶一體型接著片1之上側的面(圖9中之上側)固定於研磨裝置之研磨台304，進行研磨直到半導體晶圓303之厚度自725μm成為200μm為止。其次，如圖10所示般以背面研磨兼切割膠帶一體型接著片1與切塊台305之頂面相接的方式設置該半導體晶圓，利用切割機，以轉軸轉速30,000rpm、切斷速度50mm/sec切割(切斷)為10mm×10mm正方之半導體晶片。其次，自背面研磨兼切割膠帶一體型接著片1之背面頂上，使黏著劑層與薄膜狀樹脂組成物之界面剝離，得到附有薄膜狀樹脂組成物之半導體晶片。 Then, the surface (upper side in FIG. 9) on the upper side of the back-grinding and dicing tape-integrated sheet 1 is fixed to the polishing table 304 of the polishing apparatus, and is polished until the thickness of the semiconductor wafer 303 is changed from 725 μm to 200 μm. Next, as shown in FIG. 10, the semiconductor wafer is placed such that the back-grinding and dicing tape-integrated sheet 1 is in contact with the top surface of the dicing station 305, and the cutting speed is 30,000 rpm and the cutting speed is used by the cutter. 50 mm/sec cut (cut) is a 10 mm × 10 mm square semiconductor wafer. Next, the interface between the adhesive layer and the film-like resin composition is peeled off from the top surface of the back-side polishing and dicing tape-integrated sheet 1 to obtain a semiconductor wafer with a film-like resin composition.

之後，使用所得之附有薄膜狀樹脂組成物之半導體晶片，與實施例22同樣地製作電子裝置，並且實施同樣的評價。 Then, using the obtained semiconductor wafer with the film-form resin composition obtained, an electronic device was produced in the same manner as in Example 22, and the same evaluation was performed.

(評價結果) (Evaluation results)

使用背面研磨兼切割膠帶一體型接著片製作電子裝置，毫無問題地完成晶圓背面之研磨與切割。又，所製作之電子裝置亦毫無問題地運作。又，實施絕緣可靠性之評價，呈現「○」之良好的結果。 The electronic device was fabricated using a back-grinding and dicing tape-integrated film, and the polishing and cutting of the wafer back surface were completed without any problem. Moreover, the electronic device produced operates without problems. Moreover, the evaluation of the insulation reliability was carried out, and a good result of "○" was exhibited.

(比較例4) (Comparative Example 4)

除了將實施例22之樹脂組成物變更為比較例1之樹脂組成物以外，與實施例22同樣地製作電子裝置，並且進行評價。呈現如比較例1之絕緣可靠性差之結果「×」。 An electronic device was produced and evaluated in the same manner as in Example 22 except that the resin composition of Example 22 was changed to the resin composition of Comparative Example 1. The result "X" which is inferior in insulation reliability as in Comparative Example 1 was exhibited.

(比較例5) (Comparative Example 5)

除了將實施例23之樹脂組成物變更為比較例1之樹脂組成物以外，與實施例23同樣地製作電子裝置，並且進行評價。呈現如比較例1之絕緣可靠性差之結果「×」。 An electronic device was produced and evaluated in the same manner as in Example 23 except that the resin composition of Example 23 was changed to the resin composition of Comparative Example 1. The result "X" which is inferior in insulation reliability as in Comparative Example 1 was exhibited.

(比較例6) (Comparative Example 6)

除了將實施例24之樹脂組成物變更為比較例1之樹脂組成物以外，與實施例24同樣地製作電子裝置，並且進行評價。呈現如比較例1之絕緣可靠性差之結果「×」。 An electronic device was produced and evaluated in the same manner as in Example 24 except that the resin composition of Example 24 was changed to the resin composition of Comparative Example 1. The result "X" which is inferior in insulation reliability as in Comparative Example 1 was exhibited.

[產業上之可利用性] [Industrial availability]

本發明可適用於要求提供相向的電極間之連接性、及絕緣可靠性高之電子裝置的樹脂組成物，以及包含該樹脂組成物之硬化物而成之必須具有高連接性及絕緣可靠性之電子裝置。 The present invention can be applied to a resin composition of an electronic device which is required to provide a connection between electrodes and a high reliability of insulation, and a cured product containing the resin composition, which must have high connectivity and insulation reliability. Electronic device.

100‧‧‧電子裝置 100‧‧‧Electronic devices

110‧‧‧第一基板 110‧‧‧First substrate

111‧‧‧形成於第一基板之電極 111‧‧‧ electrodes formed on the first substrate

120‧‧‧第二基板 120‧‧‧second substrate

121‧‧‧形成於第二基板之電極 121‧‧‧ electrodes formed on the second substrate

130‧‧‧樹脂組成物 130‧‧‧Resin composition

Claims (13)

一種樹脂組成物，其係介於相向的電極間，將相向的電極予以電性連接之薄膜狀之電極連接用樹脂組成物，其特徵為含有：(A)具有萘骨架之多官能環氧樹脂、(B)在1分子中具有苯酚性羥基與羧基之化合物、與(C)薄膜形成性樹脂。 A resin composition comprising a resin composition for electrode connection in which a film is electrically connected to each other between opposite electrodes, and is characterized in that: (A) a polyfunctional epoxy resin having a naphthalene skeleton (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule, and (C) a film-forming resin. 如申請專利範圍第1項之樹脂組成物，其中，該(B)成分為在1分子中具備2個以上的苯酚性羥基與1個以上的羧基之化合物。 The resin composition of the first aspect of the invention, wherein the component (B) is a compound having two or more phenolic hydroxyl groups and one or more carboxyl groups in one molecule. 如申請專利範圍第1或2項之樹脂組成物，其中，該(B)成分為在1分子中具備2個以上的苯酚性羥基、與1個以上的直接鍵結於芳香環之羧基之化合物。 The resin composition according to claim 1 or 2, wherein the component (B) is a compound having two or more phenolic hydroxyl groups in one molecule and one or more carboxyl groups directly bonded to an aromatic ring. . 如申請專利範圍第1至3項中任一項之樹脂組成物，其中，該(A)成分為3官能環氧樹脂及/或4官能環氧樹脂。 The resin composition according to any one of claims 1 to 3, wherein the component (A) is a trifunctional epoxy resin and/or a tetrafunctional epoxy resin. 如申請專利範圍第1至4項中任一項之樹脂組成物，其中，相對於該樹脂組成物全體，該(A)成分之含量為1質量%以上、20質量%以下。 The resin composition according to any one of the first to fourth aspects of the present invention, wherein the content of the component (A) is 1% by mass or more and 20% by mass or less based on the total of the resin composition. 如申請專利範圍第1至5項中任一項之樹脂組成物，其中，該(B)成分之含量為3質量%以上、25質量%以下。 The resin composition according to any one of claims 1 to 5, wherein the content of the component (B) is 3% by mass or more and 25% by mass or less. 如申請專利範圍第1至6項中任一項之樹脂組成物，其中，該(A)成分與該(B)成分之含有質量比率[(B)/(A)]為0.2以上、16以下。 The resin composition according to any one of the items (1) to (B), wherein the mass ratio [(B)/(A)] of the component (B) is 0.2 or more and 16 or less. . 如申請專利範圍第1至7項中任一項之樹脂組成物，更含有(D)苯酚樹脂。 The resin composition according to any one of claims 1 to 7, further comprising (D) a phenol resin. 一種接著片，其特徵為：具有如申請專利範圍第1至8項中任一項之樹脂組成物、與基底薄膜。 An adhesive sheet comprising the resin composition according to any one of claims 1 to 8 and a base film. 一種切割膠帶一體型接著片，其特徵為：具有如申請專利範圍第1至8項中任一項之樹脂組成物、與切割膠帶。 A dicing tape-integrated adhesive sheet comprising the resin composition according to any one of claims 1 to 8 and a dicing tape. 一種背面研磨膠帶一體型接著片，其特徵為：具有如申請專利範圍第1至8項中任一項之樹脂組成物、與背面研磨膠帶。 A back-grinding tape-integrated adhesive sheet comprising the resin composition according to any one of claims 1 to 8 and a back grinding tape. 一種背面研磨兼切割膠帶一體型接著片，其特徵為：具有如申請專利範圍第1至8項中任一項之樹脂組成物、與兼為切割膠帶與背面研磨膠帶之背面研磨膠帶兼切割膠帶。 A back-grinding and dicing tape-integrated adhesive sheet characterized by having a resin composition according to any one of claims 1 to 8 and a back grinding tape and a dicing tape which are also a dicing tape and a back grinding tape. . 一種電子裝置，其特徵為：具有如申請專利範圍第1至8項中任一項之樹脂組成物的硬化物。 An electronic device characterized by having a cured product of a resin composition according to any one of claims 1 to 8.
TW102137788A 2012-10-18 2013-10-18 Resin composition, adhesive sheet, dicing tape single unit adhesive sheet, back grind tape single unit adhesive sheet, back grind tape and dicing tape single unit adhesive tape, and electric device TW201432005A (en)

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