TW201239514A - Method and system for forming high accuracy patterns using charged particle beam lithography - Google Patents

Abstract

A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface.

Description

201239514 VI. Description of the invention: [Technical target field of invention] Related application This application is: 1) For the October 13, 2010, the name "Use of curve pattern for integrated circuit manufacturing and masking" The method of data preparation, the US temporary patent towel request N.· 61/39W claims priority; and 2) about June 2, 2,011, the name of the fuji imura (fuj imura) A method and system for forming a pattern by charged particle beam lithography, U.S. Patent Application Serial No. 13/168,953, the entire disclosure of which is incorporated herein by reference. I [Prior Art j. Background] The present disclosure relates to lithography, and more particularly to the use of charged particle beam lithography to design and fabricate a surface that may be the surface of a reticle, wafer or any other surface. . In the production and manufacture of semiconductor devices such as integrated circuits, semiconductor devices can be fabricated using optical lithography. Optical lithography is a printing process in which a lithographic mask or reticle made from a reticle is used to transfer a pattern to a substrate such as a semiconductor or a stone wafer to form an integrated circuit (ic). . Other substrates may include flat panel displays, full-image masks, or even other reticle. Although optical lithography uses a light source having a wavelength of 193 nm, extreme ultraviolet (EUV) or X-ray lithography is also considered to be a type of optical lithography. The reticle or multiple reticle may contain a circuit pattern corresponding to one of the layers of the integrated circuit, and the pattern may be imaged to a radiation sensitive material that has been coated with a layer called a photoresist or a resist. A specific region on the substrate 3 201239514 The second patterned layer breaks through the 'layer can undergo different processes, ^ Xuan J ion implantation (doping), metallization, oxidation, and polishing. Use some of the processes to repair the individual layers of the substrate ten. If several layers are required, the _ 4 layer will be tilted by 1^^ or its variation. In the end, multiple devices or integrated circuits are included. Will appear on the substrate. These integrated circuits can then be borrowed from a knife or rope. The money is separated and can then be mounted to individual packages. More: In the case of k, a pattern on a substrate can be used to define an article such as a display, an hologram, or a magnetic recording head. In the production or manufacture of a semiconductor device such as an integrated circuit, the photo-drying method can transfer the image on the lithographic mask to a substrate such as Shi Xijing. Nanoimprint lithography (NIL) is an example of non-optical lithography. In nanoimprint lithography, a lithographic straw pattern is transferred to the surface by contact of the micro-mask with the surface. In the production or manufacture of a semiconductor device such as an integrated circuit, it is also possible to directly write a person without using a mask to fabricate a semiconductor element. Directly writing without a mask is a kind of process using a charged particle beam lithography to transfer a pattern to a base circuit such as a semiconductor = silicon germanium (4). Other substrates include a flat panel display for nano pressure. The desired pattern of the imprinted mask, or even the layer of the mark, is directly written on the surface of the two materials in this example... the patterned layer is transferred, and the layer can be subjected to various questions. Other processes, such as off, ion (_), metallization, and polishing. These processes are used to repair one layer of the substrate. If necessary, the new layer will be repeated for the entire process or its variation. Part of the layer 4 201239514 is written using optical lithography, while other layers can be written directly using the maskless screen used to make the same substrate. Also, a partial pattern of a given layer can be used. Optical lithography is written ' while other patterns are written directly using a maskless write. Finally, a combination of multiple devices or integrated circuits will appear on the substrate. These integrated circuits are then sliced. Or sawing and separating from each other, and then installed to individual seals In the more general case, the pattern on the surface can be used to define articles such as display pixels, holograms, or magnetic recording heads. Two common types of charged particle beam lithography are variable shaped beams (VSB). And character projection (CP), which are all areas of shaped beam-charged particle beam lithography, in which a precision electron beam is shaped and directed to expose a resist-coated surface, such as the surface of a wafer or The surface of a reticle. In VSB, 'these shapes are simple shapes, usually limited to axes with specific minimum and minimum dimensions and sides parallel to a Cartesian coordinate plane (ie, with "manhattan" a rectangle of orientation and a 45-degree right-angled triangle with a specific minimum and maximum size (ie, three internal angles are 45, 45, and 90 degrees). At a predetermined location, the dose of electrons is These simple shapes are shot into the resist. The total write time for this type of system increases with the number of shots. In character projection (CP), the system has a variety of different openings or characters. Template, the openings or characters may be complex shapes such as linear, arbitrarily angular, circular, nearly circular, circular, nearly annular, oval, nearly oval, partially circular, partial The part is nearly circular, partially annular, partially close to a ring, partially close to an oval, or any curved shape, and may be a complex shape of a connected group or a connected group of a group of 201239514 groups. Complex shape. An electron beam can be shot through a character on the template to efficiently produce a more complex pattern on the reticle. In theory, this system can shoot more complex shapes because of time-consuming shooting. It can be faster than the VSB system. Therefore, an E-shaped pattern shot consumes four shots by a VSB system, but the same e-pattern can be shot with one shot using a character projection system. Please note that the VSB system can be thought of as a special (simple) case of character projection, where the characters are simply characters, usually rectangular or 45-45-90 degree triangles. It is also possible to partially expose a character. This effect can be achieved, for example, by blocking a portion of the particle beam. For example, the E-shaped pattern may be partially exposed as an F-shaped pattern or a shaped pattern in which different portions of the bundle are cut by an opening. This is the same mechanism for how to use VSB to shoot rectangles of different sizes. Partial projection in this disclosure represents both character casting and VSB projection. As described, in optical lithography, a lithographic mask or reticle includes a geometric pattern corresponding to a circuit component to be fabricated on a substrate. The pattern used to make the reticle can be generated using a computer-aided design (Cad) software or program. When designing a pattern, the CAD program can generate a reticle by following a predetermined set of design rules. These rules are set by processing, design, and end-use restrictions. An example of a terminal usage limitation is to define the geometry of a transistor in a manner that does not adequately operate at the required supply voltage. In particular, design rules can define spatial tolerances between circuit devices or interconnects. Design rules are used, for example, to ensure that circuit devices or lines do not interact with each other in a bad manner. For example, design disciplines are used to keep lines from being too close to each other in a way that could cause a short circuit. Design Rule 6 201239514 Limits reflect the smallest dimension that can be reliably produced, and other items. When referring to these small dimensions, the concept of introducing the 1 dimension is adopted. It is for example defined as the minimum width of a line or the minimum space between two lines, which are subject to fine control. One of the goals in the fabrication of integrated circuits using optical lithography is to: Reproduce the original circuit design on the substrate using reticle. Integral circuit makers always try to efficiently charge the conductor wafer floor structure. Engineers continue to shrink the circuit size to allow the integrated circuit to contain more circuit components and use less power. As the size of the - (electrical) boundary dimension decreases and its circuit density increases, the circuit pattern or physical design_boundary dimension approaches the resolution limit of optical exposure fixtures. As the critical dimension of the circuit pattern becomes smaller and approaches the resolution value of the exposure tool, the physical design becomes _ accurately transcribed on the actual circuit pattern developed on the button. In order to further use optical lithography to transfer patterns with features that are smaller than the wavelength of light used in optical lithography processes, a process known as optical proximity renewal (OPC) has been developed. The 〇pc system changes the physical phase compensation to compensate for optical diffraction and optical interaction effects such as hybrid structures and _ship structures. The OPC system includes all resolution enhancement techniques performed with a reticle. The OPC can add a sub-resolution microfeature feature to the mask pattern to reduce the difference between the original design pattern, i.e., the design, and the resulting transferred circuit pattern on the substrate. The sub-resolution lithography features the original pattern in the physical design and interacts with each other and compensates for the proximity effect: Improving the final transferred circuit pattern... used to improve the pattern transfer hiding 201239514 Feature Construction (SRAF). Another feature structure added to improve pattern transfer is called "serifs". The serif can be positioned on a corner of a pattern to sharpen the corner in the final transferred image. Characteristic construction. The precision required for the SRAF surface fabrication process is often less than what is commonly referred to as the main feature construction for a pattern that is intended to be printed on a substrate. The serif is part of a main feature structure. The extreme extension of optical lithography is far beyond the sub-wavelength scheme, and OPC features must be made more complex to compensate for the more subtle interactions and effects. As the imaging system is pushed closer to its limits, it produces The ability to adequately scribe the reticle of the OPC features becomes important. While it is advantageous to add serifs or other OPC features to a mask pattern, it also significantly increases the total number of feature configurations in the mask pattern. Adding a serif to each corner of a square using the technique of seeing, adding another eight rectangles to a mask or reticle pattern. Adding an OPC feature structure is a kind of report The task of force requires high cost of computing time and leads to more expensive reticle. Not only is the OPC pattern presented complex, but because the optical proximity effect is long range compared to the minimum line and spatial dimensions, a given location The correct OPC pattern is significantly different depending on which geometry is nearby. Therefore, for example, 'one line end will have different size serifs, depending on which one is close to the reticle. Even if the purpose is likely to be on the wafer The same is true for the same shape, and these slight but critical variations are important and have prevented others from forming the ladder pattern. It is customary to reflect the feature structure of the design before the main feature structure, ie the OPC decoration, And OPC feature construction 'where the 0PC feature structure may include serifs, bumps 201239514 (j〇gs), and SRAF, to discuss the 〇I> (: decorative pattern) to be written onto a reticle. The representative meaning of slight variation may be 5% to 80% of the size of a major feature in the 敦PC Dunjin relative to a typical slight variation in the vicinity. Note that for the sake of clarity, the variations in the 0PC design are the variations referred to. Manufacturing variations such as line edge thickness and corner rounding will also occur in the actual surface pattern. When these OPC variations produce substantially the same pattern on the wafer Above, it indicates that the geometrical target on the wafer is the same within a specified error, depending on the functional details that the geometry is designed to perform, such as a transistor or a wire. However, typical specifications are located in a main The characteristic construction range is from 2% to 50%. There are many manufacturing factors that cause variation, but the 0PC component of the overall error is often in the range listed. For example, the sub-resolution auxiliary feature structure and other 0PC shapes accept various design rules. Such as a rule based on the size of the smallest feature that can be transferred using the optical lithography number. Other design rules may be from the mask manufacturing process, or from a reticle fabrication process if a character projected charged particle beam writing system is used to form a pattern onto a reticle. It should also be noted that the accuracy requirements of the SRAF feature construction on the mask may be lower than the accuracy requirements for the main feature configuration on the mask. As the process nodes continue to shrink, the size of the smallest SRAF on the mask is also reduced. For example, at a 2〇nm logic process node, a 40nm to 6〇nm SRAF is required on the mask for the highest precision layer. Inverse lithography (ILT) is a type of OPC technology. The ILT is a process for directly calculating a pattern to be formed on a reticle from a pattern to be formed on a substrate such as a germanium wafer. This may include using the desired pattern of 201239514 on the substrate as the input 'reverse' analog optical lithography process. The ILT operational reticle pattern may be purely curved - that is, completely non-linear - and may include circular, nearly circular, annular, nearly annular, oval, and/or near (four) patterns. Since the curved pattern is difficult to form on the - reticle using the conventional technique, it is expensive to use a linear approximation of the curved pattern. In this disclosure, 'ITT, OPC, source mask optimization (SM〇), and computational lithography are interchangeable terms. E UV optical lithography has a much higher resolution than the optical lithography. The very high resolution of EUV significantly reduces the need for 〇pc processing, resulting in lower mask complexity for EUV than 193mn optical lithography. However, because of the high resolution of the EUV, madness in a mask, such as excessive line edge thickness (LER), is transferred to the wafer. Therefore, the accuracy requirements for the euv mask are higher than those of the optical lithography. In addition, even though the shape of the EUV mask is not complicated by the addition of the complex sraF or serif required for 193nm lithography, the EUV mask shape is complicated by the complexity of adding EUv manufacturing. For EUV lithography to write a pattern onto the mask, a particularly coherent system is the intermediate scattering of charged particles such as electrons, which may affect a radius of about 2 μηι. This mid-range scattering introduces a new consideration in the preparation of mask data because the effects from adjacent patterns are the first to have a significant impact on the shape that a particular pattern will throw onto the surface of the mask. Previously, when using the mask of 193nm lithography for exposure, short-range scattering is only affected by the written pattern, and the long-range scattering has a large enough range that the size of a pattern rather than its detailed shape is affected. Only use dose modulation for correction. In addition, since the EUV processing of the wafer 10 201239514 is relatively expensive, it is desirable to reduce or eliminate multiple patterning. Multiple patterning is used in optical lithography to allow for exposure of small feature structures, where a pattern of one layer for wafer processing is exposed using multiple masks containing portions of the pattern. Reducing or eliminating multiple exposure systems requires a single mask to have a finer pattern. For example, a series of collinear line segments can be double patterned by first drawing a long line and then using a second mask in the lithography process to cut the line into line segments. For example, for euv lithography, the same layer written with a single mask would be required—with many smaller, line segmented masks. Due to the need to write a larger number of finer patterns on a single mask, the patterns need to be more precise, so the need for Euv mask precision is increased. There are several techniques for forming a pattern on a reticle, including using optical lithography or charged particle beam lithography. The most commonly used system is a variable shaped beam (VSB) 'where the surface of a resist coated reticle is exposed as described above with a dose of electrons having a simple shape such as a Manhattan rectangle and a 45 degree right triangle. . Customized masks In writing, electronic dose or firing systems are customarily designed to avoid overlap as much as possible, thereby greatly simplifying the calculation of how the resist on the reticle will align the pattern. Similarly, the firing set is designed to completely cover the area of the pattern to be formed on the reticle. The reticle writing for the most advanced technology nodes generally involves multiple passes of charged particle beam writing, a process known as multi-pass exposure, in which a given shape on the reticle is written and overwritten. . In general, two to four passes are used to write a reticle to write the charged particle beam into the precision error averaging in the 201239514, allowing for a more accurate reticle. And generally - the shots of the list - including the dose - are the same for each pass. Multi-pass exposure - variation in the shot of the list can be changed between rows; but the consortium of shots in any exposure covers the same area. Multi-pass writing reduces the overheating of the resist applied to the surface. The multipass write also averages the random errors of the charged particle beam writer. The use of multiple shots for different exposures for different exposures will also reduce the effects of specific systemic errors in the write process. Today's optical lithography writing implements typically reduce the reticle pattern by a factor of four during the optical lithography process. Therefore, the pattern formed on the reticle or mask must be four times larger than the desired pattern on the substrate or wafer. The current state-of-the-art charged particle beam writer using the conventional technique can resolve the feature structure from small to just (10). However, for feature structures that are less than just handsome, the write technique may not be able to accurately resolve feature constructs. In addition, manufacturing variations may result in LER and critical dimension (four) variation accepted by the family. For the OPC, which may produce less than (near) nm mask dimensions, and can be less than (10) nm for the main mask, and the mask size may be more rigorous than the optical lithography (four) screen. Micrography 'this may be a problem. C SUMMARY OF THE INVENTION 3 SUMMARY OF THE DISCLOSURE - A method for rupture or masking data preparation for charged particle beam lithography and "wherein the overlapping shots are enhanced to enhance the formation of charged particle beam shots by the group 12 201239514 The accuracy of one of the patterns on a surface and/or the marginal value of the dose. In some embodiments, the dose of the shot can be varied relative to each other prior to the correction of the proximity effect. Particle beam simulation can be used to calculate the pattern and dose margin values. The dose margin value improves the critical dimension (CD) variation and line edge thickness (LER) of the pattern produced on the surface. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows an example of a character projected charged particle beam system; Figure 2A shows an example of a cross-sectional dose pattern depicting the aligned pattern width for each of the two resist thresholds; Figure 2B shows an example of a cross-sectional dose pattern similar to Figure 2A, but Has a higher dose edge slope than Figure 2A; 'Figure 3A shows an example of a desired -100 nm line end pattern to be formed on one of the reticle sheets; Figure 3B shows An example of an exemplary pattern formed by a shot produced by breaking a pattern of FIG. 3A by a technique; FIG. 4A shows an example of a desired 80 nm line end pattern to be formed on one of the reticle sheets; Figure 4B shows an example of a simulated pattern formed by firing a pattern created by breaking the pattern of Figure 4A; Figure 5A shows a desired 60 nm line end pattern to be formed on one of the reticle sheets. An example; FIG. 5B shows an example of a simulated pattern formed by a shot generated by breaking a pattern of FIG. 5A using a technique; FIG. 6 shows a shot of a group that can be used to form an 80 nm line end pattern 2012 201214 Different examples; Figure 7 shows the simulated pattern formed by the different shooting groups of Figure 6; Figure 8A shows an example of a rectangular pattern to be formed on a group on one surface; Figure 8B Shows how one of the patterns of Figure 8A formed on a surface can be used in the presence of medium-range scattering; Figure 9A shows a pattern that can be used to form Figure 8A. An example of a set of overlapping VSB shots on a surface; Figure 9B shows an example of a pattern that can be formed on a surface from a shot of Figure 9A; Figure 10 shows how to prepare a surface, such as a line A conceptual flow diagram of a film for use in optical lithography to fabricate a substrate such as an integrated circuit on a lithographic wafer; Figure 11A shows a method for combining model-based and accommodative fractures in the same design Conceptual Flowchart; Figure 11B shows a conceptual flow diagram of another method of combining model-based and acquainted fractures in the same design. I: Embodiment 3 Detailed Description of the Embodiments The present disclosure describes an overlay shot to enhance charging. The method of accuracy of particle beam exposure. The present invention is an enhanced charged particle beam system that accurately produces a pattern of less than 100 nm on a reticle that has acceptable CD variation and LER due to manufacturing variations. Furthermore, the invention is expanded

14 S 201239514 A process window under which the manufacturing variations of these precise patterns can be produced. See the month's participation..., the similar code in the 'form' refers to a similar project. Figure 1 shows an embodiment of a conventional lithography system 1 (8), such as a charged particle beam writer system, in this case - an electron beam writing human n-line, which uses character projection to make 1®13G . The electron beam writing unit 100 has an electron beam source m which projects the electron beam m toward the aperture plate (10). An opening H8 through which the electron beam 114 is allowed to pass is formed in the plate 116. Once the electron beam 1M passes through the opening 118, its lens (not shown) is directed or biased toward the electron beam 12G toward the other rectangular aperture plate or stencil mask (2). A number of openings or openings 124 have been formed in the template 122 which define the respective _ characters 126 which may be complex words it. Each of the characters 126 formed in the template 122 can be used to form a Figure 1/10 from "U μ 148 on a substrate 132 - such as a wafer, a reticle or other substrate - to the surface 13 () on. In partial exposure, partial projection, partial character projection 1 variable character projection, the electron beam 丨 20 can be positioned so as to only strike or illuminate the air-, one of the ones of the 兀126, thereby forming As a group of characters 126 - pattern I48. For each character 126 having a smaller size than the electron beam 120 defined by the opening m, the black-out region 136 without the opening is adjacent to the word t1 126, thereby preventing the electron beam 12() from being illuminated by one. Bad characters are on template 122. - Electron beam 134 is an electromagnetic or static reduction lens 138 that emerges from one of the characters 126 and passes through the pattern size of the character 126. In commonly available charged particle beam writer systems, the reduction factor is between 10 and 60. The reduced electron beam 14 appears from the reduced lens 138 and is guided to the surface 13 by a series of deflectors 142 to form a pattern 148, which is depicted as the letter "H," corresponding to the character 126A. The shape 15 201239514 is shaped. Because the lens 138 is reduced, the pattern 148 is reduced in size compared to the character 126A. The pattern 148 is drawn using a shot of the electron beam system 1 。. Compared to using a variable shaped beam (VSB) projection In terms of system or method, this reduces the overall write time of the finished pattern 148. Although an opening 118 is shown formed in the plate 116, there may be more than one opening in the plate 116. Although two plates 116 are shown in this example and 122, there may be only one or more than two plates, and each plate contains - or more openings. In the charged particle beam writer system, the reduced lens 138 is calibrated to provide a fixed reduction factor. Reduced lens 138 and / Or the deflector 142 also focuses the beam on the plane of the surface 130. The size of the surface 130 can be significantly greater than the maximum beam deflection capability of the deflecting plate 142. Thus, the pattern is normally written on the surface in a series of stripes. Each stripe includes a plurality of subfields, wherein the first field is located within the beam biasing capability of the deflecting plate 142. The electron beam writer system 100 includes a positioning mechanism 150 to permit positioning for each of the fringes and the subfield. Substrate 132. In a variation of the charged particle beam writer system, the substrate 132 remains static when the field is exposed, after which the positioning mechanism 150 moves the substrate 132 to the next subfield position. In another variation of the charged particle beam writer system, the substrate 132 is continuously moved during the writing process. In this variation involving continuous motion, in addition to the deflecting plate 142, there may be another set of deflecting plates. (not shown) moves the beam at the same speed and direction as the substrate 132 moves. The minimum size pattern that can be projected onto a surface 130 with reasonable accuracy is limited to that of the electron beam writer system. A number of different shorts associated with the surface 13〇, which normally contains a resist coating on the substrate 132.

S 201239514 physics effect. These effects include forward scatter, coulombic ffe c t, and resist diffusion. Beam ambiguity is used to include all of these short-term private sufficiencies. The most modern electron beam writer system achieves an effective beam blur radius or pf in the range of 2〇11111 to 30nm. Forward scatter can constitute a quarter to a half of the total beam ambiguity. Modern electron beam writer systems contain a variety of mechanisms for minimizing the component of the beam blur. Partial electron beam writer systems may allow beam blur to change during the writing process, from a minimum value that can be taken on an electron beam writing system to one or more large values. A shot in a charged particle beam writer such as an electron beam writer system is a function of the intensity of the beam source 112 and the exposure time of each shot. In general, the beam intensity remains fixed and the exposure time is varied to obtain a variable firing dose. In a process called Proximity Effect Correction (PEC), the exposure time can be varied to compensate for various long-range effects such as backscattering and fogging. An electron beam writer system typically allows an overall dose called a substrate dose to affect all shots in an exposure pass. Partial electron beam writer systems perform dose compensation calculations in the electron beam writer system 'and do not allow the doses of each shot to be individually assigned as part of the input shot list' so the input shot has an unassigned shot dose . In such electron beam writer systems, all shots have a substrate dose before the proximity effect is short. Other electron beam writer systems do allow dose assignments with a shot-by-shot basis. In an electron beam writer system that allows for one shot dose assignment, the number of dose levels that can be taken may be 64 to 4096 or greater, or may have a relatively small number of dose levels that can be obtained for 2012. Up to 8 levels. Some embodiments of the present invention are directed to the use of a charged particle beam writing system that allows for the assignment of a dose level, and the mechanism within the electron beam writer has a resolution for calculation. Therefore, today's electronic Tokyo is more difficult to accurately record, such as in the 2pm range. For the EUV mask, the medium-range bridge is needed to see the situation. The radiation (four) is designed to completely cover the dome-shaped shot. — Enter the pattern while avoiding a shot weight of 4 as much as possible. Also, all are designed to have a - normal dose, which is a dose that allows a relatively rectangular shot to produce a pattern on a surface having a phase size relative to the shot size. For example, when charged particle beam lithography is used to expose a repetitive pattern on a surface, the dimensions of each pattern as measured on the final finished surface will be slightly different due to manufacturing variations. The amount of dimensional variation is - an important manufacturing optimization criterion. In today's mask masks, it may be desirable to have a root mean square (RMS) variation of no more than 1ηηι (1σ) in the pattern size. Larger size k variants mean larger variations in circuit performance, resulting in a lower design margin, making it difficult to design faster, lower power integrated circuits. This variation is called the critical dimension (CD) variation. An mCD variant is ideal and indicates that manufacturing variations will result in relatively small size variations on the final fabricated surface. On a smaller scale, the effect of a high CD variation can be observed by line edge thickness (LER). The LER is caused by portions that are made slightly different from one of the line edges, resulting in a portion of the wavy in a line that is intended to have a linear edge. The CD variant is inversely related to the slope of the dose curve at the threshold of the resist, known as the edge slope, and has other effects. Therefore, the 201239514 edge slope, or dose margin value, is one of the critical optimization factors for the particle beam write to the surface. In this disclosure, the edge slope and dose margin values are interchangeable terms. The dose marginal value of the written shape is considered to be immutable by the fact that there is no shot overlap, gap or dose modulation; that is, it is not possible to modify the dose margin by selecting the term. In modern practice, the technique of avoiding extremely narrow shots called slicing is an example of a practical rule-based approach that helps to optimize the shot list for dose marginal values. In the rupture ring 35 in which overlapping shots and dose-modulated shots can be generated, 'there is a need and there is an opportunity to achieve an optimal balance of the dose margin value. The '@' system allows for a number of fracture solutions that produce a target mask shape on the surface, but only under perfect manufacturing conditions. Therefore, the use of stacking shots and dose-modulated shots has generated the issue of addressing the issue of dose margins and its improvement. Figures 2A through B show how the critical dimension can be reduced by exposing the pattern on the resist, thereby producing a relatively l edge slope in the exposure or dose curve. Figure 2A shows a cross-sectional dose curve 2〇2, where = shows the cross-sectional distance through an exposed pattern - such as the distance between the two orthogonal to the pattern edge and the y-axis shows the resist received - month J in. A pattern is aligned by the resist, wherein the received dose is above the threshold. Figure 2 shows two thresholds, which depict the effect of the sensitivity of the resistance. The threshold 204 is such that a pattern of width 214 will be aligned by the resister. 19 201239514 A low threshold of 2G6 results in a width 216 - the pattern will be aligned by the resist, and its width 216 is greater than the width 214. Figure 2B shows an additional cross-sectional dose curve 222. Two inter-values are displayed, wherein the inter-edge value 222 is the same as the inter-value 204 of Figure 2a, and the threshold 226 is the same as the threshold 2〇6 of the 2A map. The slope of the dose curve 222 is higher than the slope of the dose curve 2G2 near the two thresholds. For dose curve 222, a higher threshold 224 causes a pattern of width 234 to be aligned by the resist. A lower threshold 226 causes a pattern of width 236 to be aligned by the resist. As can be seen, since the dose curve 222 is higher than the edge slope of the curve 202 in the agent, the difference between the width 236 and the width 234 is less than the difference between the width 216 and the width 214. If the resist coated surface is a reticle, the lower sensitivity of curve 222 to the variation of the resist threshold will result in a more sinful pattern width from a reticle made from the reticle. In the target pattern width, the yield of the usable integrated circuit is improved when the mask is used to transfer a pattern to a substrate such as a stone wafer. For dose curves with a more marginal slope, an improvement in tolerance similar to the dose variation for each shot was observed. Therefore, a relatively high edge slope is desired in, for example, dose curve 222. Figure 3A shows an example of a design pattern 3〇2. Pattern 302 is designed to have a constant width 306' which is l 〇〇 nm. Pattern 302 includes a line end 304. Figure 3B shows an example of a simulated pattern 312 that can be formed on a surface using a conventional VSB shot, wherein the VSB shot is a rectangle wide and has a normal dose. As can be seen in Figure 3B, the line end portion 314 of the pattern 312 has rounded corners due to beam blurring due to physical limitations of the charged particle beam writer. In addition, the exposed pattern is attached to the pattern

There is a poor edge slope in sections 316 and 318 of the perimeter of 20 S 201239514. This can be done, for example, by particle beam simulation to determine this edge slope. Portions 316 and 318 of pattern 312 can cause significant variations in size due to manufacturing variations. However, the wire end 314 is of a desired length in its central section, i.e., has the same y coordinate as the design wire end 3〇4. Fig. 4A shows an example of a design pattern 4〇2. The pattern 4〇2 is designed to have a constant width 406 of 8 〇 nm. The pattern 4〇2 includes a line end 4〇4, and the y coordinate of the line end 404 is shown by reference line 4〇8. Figure 4B shows an example of a simulated pattern 412 that can be formed on a surface using a conventional VSB shot, wherein the VSB shot is 8 〇 11111 wide and has a normal dose. Like the pattern 312, the line end portion of the pattern 412 is called a rounded corner due to the beam simulation. Also, portions 416 and 418 of the periphery of pattern 412 have a poor edge slope. As can be seen, the portions around the pattern 412 having a poor edge slope are 416 and 418 are larger than the portions Ms and 318 of the pattern 3丨2 having a poor edge slope. This is because the pattern 4〇2 is caused by a narrow width of 80 nm in comparison with the width of the 1〇〇11111 of the pattern 3〇2. In addition, the formed seventh end of the line end 4 4 is larger than the y coordinate of the reference line 408, indicating that the pattern 412 has a line end shortening, which affects the performance of an integrated circuit fabricated using the mask containing the pattern 412. And / or function. Figure 5A shows an example of a design pattern 5〇2. The pattern 5〇2 is designed to have a constant width of 5 〇8 of 60 nm. The pattern 5〇2 includes a line end 5〇4, the y coordinate of which is shown in reference line 5〇6. The 5th map shows an example of a pattern 512 that can be formed on a surface using a conventional VSB shot, where the VSB shot is (10) wide and has a _ normal dose. As seen in Figure 21 201239514, the line end portion 514 of the pattern 512 is very rounded. There is also a line end shortening _ the minimum value y coordinate of the pattern 512 is larger than the reference line 5_y coordinate. In addition, the peripheral region 5丨8 of the pattern 5Π has a poor edge slope and affects the overall line end 514. The patterns of Figs. 3B, 4B, and 5B show that when formed by the conventional VSB shot, the pattern formation having a width of 80 nm or less can have a line end shortening, and can also have a rounded corner including a bad edge slope. Fig. 6 shows a different method for breaking a pattern to enhance the quality of a pattern formed on a surface such as a reticle. The shape 6〇2 shows a designed line end pattern, and the pattern 602 has a width of 8 〇 nm. The pattern 6〇2 contains a line 606. The dotted line 6〇8 represents the y coordinate of the line end 6〇6. The second pattern 612 shows a prior art method for breaking the pattern 6〇2 to improve the quality of the pattern formed on a surface compared to the fourth pattern 412. Pattern 612 shows a single VSB shot in which the shot size has been enlarged in the negative 乂 dimension, so the minimum y coordinate of the shot is 7 nm smaller than the reference y coordinate 608. The dose of shot 612 is a normal dose. Pattern 712 of Figure 7 shows a shot shape of shot 612. The line ends of pattern 712 have rounded corners and also have perimeter regions 714 and 716 in which the pattern includes a slope with a low edge. Figure 6 also shows three groups of VSB shots: group 622, group 632, and group 642, which may form a pattern 602. Shooting group 632 and shooting group 642 demonstrate an embodiment of the present invention, while shooting group 622 represents a prior art method. Shooting group 622 is comprised of shot 624 and shot 626 that do not overlap each other. Shot 624 was fired at 1.2 times the normal dose before the long-range PEC, while shot 626 was fired at a normal dose. Shoot 624 width 628

S 22 201239514 is less than 604 and is calculated to produce a width-pattern on the surface by a dose greater than normal. As can be seen, the shot 626 is in the dimension of the negative and positive X sides extending beyond the shot 624 and also exceeding the pattern 6〇2. Figure 7 shows a simulated pattern produced by the firing group 622. The pattern has a higher edge slope from the second end corner 724 than the pattern 712, wherein no portion of the corner has a too small edge slope. In addition, the shot 624, which is not conventionally dosed, improves the edge slope on the left and right sides of pattern 722 as compared to pattern 712. A method for determining the firing of the firing group 622 is via a model-based fracture that is determined by simulations such as charged particle beam simulation to form a desired pattern on a resist coated surface. A set of shots that is determined by a simulation of a pattern formed on a surface from one or more shots of a given set, some or all of which may have an abnormal dose. Alternatively, the shooting of the shooting group 622 can be determined via a rule-based approach. Model-based fractures—although they are relatively more computationally intensive than rule-based fractures—will produce a more precise pattern than one that uses a rule-based approach to determine the shot list. A list of shots on the surface. Figure 6 Shooting Group 632 shows an exemplary method for breaking pattern 602 in accordance with one embodiment of the present invention. Shooting group 632 is comprised of shot 634, shot 636, and shot 638. Shots 636 and 638 are shaded for improved clarity. Shot 634 is fired at a higher than normal dose, such as 2 times the normal dose, and the width of shot 634 is calculated to produce a pattern having a width 604 on a surface. Both shot 636 and shot 638 overlap with shot 634' and both extend below reference y coordinate 608. For example, the overlap between shooting 634 and 636 23 201239514 is that the partial weight 4 ′ represents that the intersection area between shooting 634 and shooting 636 is tied to either of the two shooting towels. Shooting coffee and shooting 638 shoot in normal doses in this example. The pattern of Fig. 7 is 2 showing the simulated pattern from group 632. Pattern 732 exhibits a smaller corner rounding than pattern 722, but also has a poorer edge shape on the limb with a slope less than the minimum acceptable value for the perimeter 11734 and 736. Shooting group 632. Shows how overlapping shots and non-positive (four) quantities can allow for a higher fidelity than the normal dose (four) stack shots to form a pattern. Figure 6 Shooting Group 642 shows another example of a fracture pattern 602 utilizing partial overlap shots in accordance with the present invention. The shooting group 642 is composed of shots 644, 646, 648, and 650. Shots 646, 648, and 65 are displayed using a shadow to improve clarity. Just like shots 624 and 634, shot 644 uses a normal dose, such as a 12x normal value. Shots 646, 648, and 65 使用 used a normal dose in this example. Shooting 65 〇 overlaps with shooting 644. Shooting 646 and 648 extends beyond the reference y coordinate 6〇8. The pattern 742 of Figure 7 shows a simulated pattern from the shooting group 642. The corner 744 of the line end of the pattern 742 is less rounded than the corner of the pattern 722. In addition, the edge slope in the corner zone is above the minimum in all locations. Just like the shooting group 632, the shooting group 642 shows how the use of overlapping shots incorporating an abnormal dose can allow for a pattern to be formed with a higher fidelity than the method shown by the method such as shooting 612 or prior art. . The solution described above and shown in Figure 6 of the firing groups 63 2 and 642 can be implemented even with a charged δ 24 201239514 particle beam system that does not allow for dose assignment for individual shots. In one embodiment of the invention, 'a small number of doses can be selected, such as two doses such as 1. normal, and normal, and the firing system for each of the two doses can be used in two separate exposures. Separation and exposure, wherein the base dose for one exposure pass is 1 · 〇χ normal and the base dose for another exposure pass is 1.2 χ normal. For example, in shot group 632 of Figure 6, shot 636 and shot 638 can be assigned to a first exposure pass using a base dose of l.〇x normal dose, and shot 634 can be assigned to a normal dose of 1.2 χ. The second exposure of the substrate dose is passed. In this embodiment, the consortium for any exposure pass shot will be different from the consortium for the shots of the combined exposure pass. In other embodiments of the invention, overlapping shots may be utilized to reduce the sensitivity of the type of manufacturing variation that is not a 'dose variation. Beam blurring is an example of another type of manufacturing variation. Moreover, the method of the present invention can also be performed using complex character projection (CP) shots or a combination of complex CP and VSB shots. Figure 8A shows an example of a rectangular pattern 800 to be formed in a group on a surface. The group of patterns 8 includes six complete rectangles, including a rectangle 802, a rectangle 804, a rectangle 80, a rectangle 808, a rectangle 810, and a rectangle 812. In addition, four extra rectangular portions are displayed: rectangle 814, rectangle 816, rectangle 818, and rectangle 820. It can be seen that the rectangles are arranged in a straight line in a regular pattern 'where adjacent straight lines are separated - space 830, and wherein the adjacent rectangles in the row are separated by a space 832. Pattern group 800 can be written to a surface using a VSB shot for each pattern in pattern group 800 using a conventional non-overlapping VSB shot. Thus 25 201239514 Figure 8A can also be viewed as a group of shooting goo, including shots 802, 804, 806, 808, 810, 812, 814, 816, 818 and 820. Figure 8B shows an example of a set of simulated patterns 850 that can be generated from shot group 800 in the presence of mid-range scattering. The set of patterns 85 includes six complete patterns including a pattern 852, a pattern 854, a pattern 856, a pattern 858, a pattern 860, and a pattern 862. Pattern group 850 also includes four additional patterns, with Figure 8B showing only a portion of the pattern, including pattern 864, pattern 866, pattern 868, and pattern 870. The pattern in pattern group 850 exhibits corner rounding due to beam simulation, an example of which is corner 872. In addition, the middle portion of the pattern in the middle two straight rows measured in the x direction is narrower in the X direction than the rest of the pattern as shown by the middle portion 874 of the pattern 858. This narrowing is the result of having less intermediate-path scatter energy reaching the mid-portion 874 of pattern 858 than other portions of arrival pattern 858. In pattern 858, the pattern narrowing in region 874 is due to the gap between shots 814 and 806 and the gap between shots 818 and 812. Compared to the opposite shots 814, 806, 818, and 812, there is less intermediate-range scattering energy reaching the resist near the pattern 858 opposite the gaps. The outer straight lines 852, 854, 868, 862, and 870 exhibit asymmetric narrowing because they have adjacent shots on only one of the left or right side. The inner side has a narrowing zone 876 similar to the pattern 862, as shown by the pattern 858. On the outwardly facing edge, such as edge 878 of pattern 862, the absence of an adjacent pattern causes lower mid-range scattering energy to be received along the entire edge, with the result that the overall edge 878 is offset in the -χ (negative X) direction, resulting in The width 882 of the pattern 862 is less than the width 880 of the pattern 858. This simulated mid-range scattering system is similar to the EUV optical lithography standard in the range of effect.

S 26 201239514 The medium-range scattering of the line, but the medium-range scattering system simulated in the pattern group 850 has a higher (four) intensity than the current EUV marking line #4 (4). Pattern group 850 shows how mid-range scattering with a sufficient magnitude can affect the pattern written by charged particle beam lithography. In another embodiment of the invention, overlapping shots may be utilized to perform mask process correction whereby a higher fidelity pattern is produced in the presence of mid-range scattering. Figure 9A shows one of the patterns 8 射击 of the pattern 8 可 that can be used to generate the group. Shooting group 900 includes rectangular shots 902, 9〇4, 906, 908, 910, and 912. The shooting group 9〇〇 also contains rectangular shots 914, 916, 918 and 920, showing only a certain part of it. Compared to the shooting group 8〇〇, the shooting group 9 (10) includes the following: • The shooting on the outer straight line is widened on its outer edge. This includes shots 902, 904, 918, 912, and 920. In shot 912, for example, edge 936 is moved in the +χ direction as compared to shot 812. • Add extra shots to prevent pattern narrowing in the middle portion of the pattern, as shown by pattern group 850. The added shots include shots 922, 924, 926, 928, 930, and 932. These added shots deliver additional doses to the area, with the exception of the outer edge of the shot that will receive the smaller mid-range scattering dose on the outside. Due to the wide-range shooting group 900 on the outside, the pattern narrowing is prevented by widening the shots 9〇2, 904, 918, 912 and 920 on its outer edge as described above. The overlapping shots 922, 924 and 932 are positioned as The outer edges of the shots 902, 904, and 912 are moved away to prevent the excessive mid-portion of the pattern formed by the shots 9〇2, 9〇4, and 912 from widening. Figure 9B shows an example of a pattern 950 that can be generated from a group of shots 900 on one of the surfaces of the 2012 201214 group. The pattern 950 of the group includes patterns 952, 954, 956, 958, 960, and 962, and partial patterns 964, 966, 968, and 970. As can be seen, the exposure change shown in the shot 900 of the 'middle range scattering occurrence' group compared to the shot 800 of the group improves the fidelity of the pattern produced on the surface. The middle part of the pattern is not narrowed. Further, the width of the outer straight line pattern such as the width of the pattern 962 is equivalent to the width of the inner straight line such as the width 980 of the pattern 958. The calculations described or referenced in the present invention can be achieved in a variety of different ways. In general, calculations can be made by in-process, pre-process, or post-process methods. The calculation in the process involves performing a calculation when the results are needed. The pre-process calculation involves pre-calculation, then storing the results for later retrieval during a subsequent processing step, and can improve processing performance, especially for calculations that can be repeated multiple times. The calculation can also be deferred from a processing step and then performed at a later post-processing step. An example of pre-process calculations is - the shot group' is a pre-calculation of dose pattern information for one or more shots associated with a given input pattern or set of input pattern features. The shooting group and associated input patterns can be stored in a library of pre-computed shooting groups - so that for the additional case of the input pattern, the group of shots containing the shooting group can be quickly generated without patterning recalculate. In some embodiments, the pre-computation system can include a simulation of the (d) group of dose patterns that will be produced on the resist-coated surface. In other embodiments, the firing group can be determined without the need for simulation by using a correct-by-construction technique. In the case of the Knife Court, it is expected that the shooting group can be used in the shooting group library.

28 201239514 /, his real (four) towel '(d) 贞 calculated shots can be stored for one or more specific categories of „production 敎 „ 程式 钱 钱 。 。 。 程式 程式 程式 程式 程式 程式 程式 程式 程式 程式 程式 程式 程式 程式 程式 程式 程式 程式 程式The factory's multiple pre-computed shooting groups can be stored in a table format, and the towel table towel _ corresponds to each different wheeling pattern 2 into the pattern features such as the pattern width, and each of the tables The login system provides the shooting of the list, or how to generate the appropriate group of shots. In addition, the 'different shooting groups can be stored in the same way in the shooting group: library. In the p-blade embodiment, the dose pattern that can be generated for a given shot group can also be stored in the shot group library. In one embodiment, the dose pattern can be stored as a two-dimensional (χ & γ) dose map called glyph. The 10th 疋 疋 how to prepare a reticle for use on a lithographic wafer - a conceptual flow diagram 1G5G of a surface such as an integrated circuit. In a first step 1052, a design - physical design, such as - an integrated circuit - physical design. This may include mosquito logic gates 'transistors, metal layers, and other items found in _ physical design, such as - integrated circuits. The physical design can be straight, partially curved, or completely curved. Next, in step 1054, the optical proximity bridge is determined. In the disclosed embodiment, this may include obtaining a pre-computed shooting group library from the shooting group (4) in the library 1Q74 as the input. This village addition or replacement method involves obtaining a pre-designed character face H cut, including complex characters that will be available on the -step brain in the -step brain. In the disclosed embodiment, the '_QPC step deletion may also include simultaneous optimization of the shot count or write time' and may also include a - break operation, a shot placement operation, a dose assignment operation, or may also include _ shooting Sequential optimization operations, 29 201239514 or other mask data preparation operations, where these operations are partially or fully simultaneous or combined in a single step. The 0PC step can generate a partial or complete curved pattern. The output of OPC step 1054 is a mask design 1056. The mask process correction (MPC) 1057 is available on the mask design 1〇56. The MPC system modification will be written to the pattern of the reticle to compensate for effects such as narrowing of the pattern of less than about 1 〇〇 mn wide. In a step (7) brother, a mask data preparation (MDp) operation may be performed which may include a rupture operation, a shot placement operation, a dose assignment operation, or a shot sequence optimization. The MDP can use the result of the mask design 1056 or the operation of 1〇57 as input. In some embodiments of the invention, the MPC can be performed as part of a break or other MDp operation. Other corrections can also be made for breaks or other parts of the MDP operation. Possible corrections include: forward scatter, resist diffusion, Coulomb effect, etching, backscattering, atomization, loading, resist filling, and Euv mid-range scattering. The result of the MDP step 1058 is a shot list 1〇6〇. 〇pc step 1054 or MDP step 1058, or a separate program 1072 may include pre-six calculations for one or more shot groups of a given input pattern, and storing this information in a shot group library 1074. This disclosure is intended to incorporate any or all of the different operations of combining OPC and mask preparation in one step. The mask data preparation step 可 58, which may include a break operation, may also include a pattern matching operation to match the pre-computed shot groups to create a mask that closely matches the mask design. Mask data preparation may also include reducing the sensitivity of the pattern written in step 1062 to manufacturing variations. The mask data preparation may also include: inputting a pattern to be formed on a surface, wherein the pattern is slightly δ 30 201239514 is slightly different, and a set of characters to be used to form the number of patterns is selected, the group of characters matching On a template mask, the set of characters may include complex and VSB characters, and the set of characters is based on the changed character dose or changed character position' or changing the beam blur radius or applying the set of characters A portion of one of the characters is exposed or dragged by one character to reduce the shot count or total write time. A slightly different set of patterns on the surface can be designed to produce a substantially identical pattern on a substrate. Also, the set of characters can be selected from a predetermined set of characters. In one embodiment of the disclosure, a set of characters that can be quickly selected during the mask writing step 1062 and taken over a template in a step 1 〇 8 可 can be prepared for a particular mask design. In this embodiment, once the mask data preparation step 1056 is completed, a template is prepared in a step 〇84. In another embodiment of this disclosure, a template is prepared prior to or concurrent with the MDP step 1058 in step 1084 and may be independent of the particular mask design. In this embodiment, in step 1082, the character and template layouts that can be taken in step 1080 are designed to make a general output for a number of potential mask designs 1 to be incorporated by a particular OPC program 1054 or one. The particular MDP program 1058 or the pattern output by a particular type of design' provides features of the physical design 1052, such as memory, flash memory, system chip design, or a particular process technology designed to be located in the physical design 1052, or used in A particular cell library in physical design 1052' may form any other common feature of the different sets of slightly different patterns in the mask design 1〇56. The template may include a set of characters, such as determined in step 1058 - a limited number of characters. Using shot list 1060 to generate a 31 201239514 surface in a mask writing step 〇 62, which uses a charged particle beam writer, such as an electron beam writer system. The mask writing step 1062 can use a template 1084 containing a plurality of complex characters, or a template containing VSB openings can be used. The electron beam writer system projects a beam of electrons through a stencil onto a surface to form a pattern on a surface, as shown in a step 1064. The finished surface can then be used in an optical lithography implement' which is shown in a step 1066. Finally, in a step 1068, a substrate such as a germanium wafer is produced. As previously described, the 'words' in step 1080 can be provided to 〇pc step 1〇54 or MDP step 1058. Step 1080 also provides a character to a character and template design step 1 〇 82 or a shot group generation step 1072. The character and template design step 〇82 provides an input to the template step 1084 and provides to the character step 1〇8〇. The Shooting Group Generation Step 1072 provides information to the Shooting Group Library 1074. Also, a shot group pre-calculation step 1072 can use the physical design 1 〇 52 or mask design ! 〇 56 as input, and can pre-compute one or more shot groups stored in a shot group library 1074. A model-based fracture system can be combined with a see-through fracture in a single step. This would allow model-based fractures to be used in such areas where they would provide maximum benefit, while other injuries to the design would be less computationally intensive. As previously indicated, ^ see breaks, avoiding shot overlap as much as possible, and all shots have a normal dose during long-range correction. In Figure 11A, conceptual flow diagram 1100 shows one embodiment of how the merged and model-based fractures can be combined. The input system for the 緃 merge fracture process is the mask design 1102. The mask design U〇2 can be used as the mask design 1056 from the first drawing, or it can be used as a mask

32 201239514 A part of the design 1056, or a modified version of the mask design (7)%, such as from the MPC1G57. On the mask design, let's see the break ιι〇4 to generate - see the shot list 11G6. Alternatively, the fracture can be seen on the part of the mask design so that some parts remain unbroken. A model-based rupture step 1108 then enters the shot list 丨丨(10) and modifies, adds, or deletes shots in a complex region of a shot. The complex area may include, for example, an area having a minimum pattern or an area having a curved pattern. The complex region may also include regions with high impact from mid-range scattering. Complex areas may also include "hot spots" with specific sensitivities in manufacturing. The "complex" term of this context may not represent the geometric complexity of the shape. In some embodiments, model-based The fracture 11〇8 series may include: deciding in which region the modified shots and/or the model-based shots are substituted for the simulated shots. In other embodiments, the complex regions may be determined in a separate step 112, automatically from The mask design is 1〇56 or manually determined. In either case, the model-based fracture 11〇8 system produces shots, some of which partially overlap with other shots. Model-based breaks. Nos can The shots determined by the model-based technique have been used to replace or modify some or all of the shots in the designed or determined complex portion of the shot. The output of the model-based rupture step 1108 is a final shot list 1110. 'It contains both a habit and a model-based shot. The final shot list 1108 corresponds to the first shot shot list 1060. For the steps in the conceptual flow diagram Rough particles are processed in parallel, and the mask design 11〇2 may be part of the design, or it may be an overall design that can be performed in parallel. Figure 11B Conceptual flow chart U20 shows how the merger can be seen and the model is 33 201239514 Another embodiment of the underlying fracture. The input system for the merged fracture process is a mask design 1122. The mask design 1122 may be the mask design 1056 from step 1 ,, or it may be a mask design 1 〇 56 A portion, or a modified form of the mask design 1056, such as from MPC 1057. In Figure 11B, the mask design 1122 is a patterning step by dividing the pattern data into non-complex pattern regions 1126 and complex pattern regions 1128. 1124 is processed. A conventional fracture step 1130 uses the non-complex pattern region H26 as an input. The fracture 1130 outputs a list of the conventional shots 1136. An additional output is the PEC information 1132. In some embodiments, this information may be PEC. One or more forms are used directly. In other embodiments, the pec information can be, for example, the look-up list itself, from which PEC information can be calculated. Case area 1128 is broken using model-based fracture 1134. Model-based fracture 1134 can use PEC information 1132 as input, if it is necessary to derive model-based shots from the practice shots for the effects of long-range effects. This information is processed by the appropriate PEC terminal. In other embodiments, the pEC information can also be output by the model-based fracture 1134, and the fracture 1130 can be used in some way. The model-based fracture 1134 generates one. The model-based shooting list 1138 ^See shooting list 1136 and the model-based shooting list 1138 are then merged into a combined shooting list 1140 'which corresponds to the first shot shooting list 1〇6〇. For the parallel processing of the coarse particles of the steps in the conceptual flow diagram 1120, the mask design 1122 may be part of the design, or it may be an overall design in which the steps may be performed in parallel. The fractures, mask data preparation, proximity effect corrections described in the present disclosure 34 201239514 and the firing group generation process can be implemented using the 1贱f series of brain software. The appropriate power can also be parallel (4) (four) "a large number of calculations required by the domain, can be subdivided into, in the process - or multiple operations - in the embodiment" to operate the two-dimensional geometric region to support parallel operations. / _ Sexual steps of multiple independent or multi-hearted - special purpose hardware h I Shicai 'can use a single brain or processor core for higher speed than utilization - general use of electricity, special purpose hardware devices Can be operated in multiple steps. One _). In another embodiment, the disclosure is that the graphics processing unit can include revision and re-evaluation to optimize the summation and analog production to reduce the total number of shots, or the total charged particle generation process. In another embodiment, the time of entry, or some other parameter (CO called by tiGn), may be determined by the construction of the bridge to be modified. The beginning of the sentence is not required. Although it has been described in detail for a particular embodiment, it will be appreciated that the following can be readily conceived: = </ RTI> or variations, and equivalents. The method for the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the smear The spirit and the spirit of the object please = = the technician will understand: the bribe is only for the _, and t is 2 cooked: add, delete or modify (4) for the steps in this specification without departing from the scope of the 2 invention. In general, any proposed (10) indicates the possible sequence of achieving the basic operation of Wei, and may have multiple variations of 201235. Therefore, the subject matter of the subject matter is intended to cover such modifications and variations within the scope of the claims and their equivalents. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows an example of a one-shot projected charged particle beam system; FIG. 2A shows an example of a cross-sectional dose pattern depicting the aligned pattern width for each of the two resist thresholds. Figure 2B shows an example of a cross-sectional dose pattern similar to Figure 2A but with a higher dose edge slope than Figure 2A; Figure 3A shows one that will be formed on a reticle An example of a desired line end pattern of 100 nm; FIG. 3B shows an example of a simulated pattern formed by shots generated by the technique of breaking the pattern of FIG. 3A; FIG. 4A shows that it will be formed on a line An example of one of the desired 80 nm line end patterns on the sheet; FIG. 4B shows an example of a simulated pattern formed by shots generated by the technique of breaking the pattern of FIG. 4A; FIG. 5A shows that it will be formed in An example of a desired 60 nm line end pattern on one of the reticle sheets; Figure 5B shows an example of a simulated pattern formed by shots generated by breaking the pattern of Fig. 5A using a conventional technique; A different example of a shot that can be used to form a group of 80 nm line end patterns is shown; Figure 7 shows a simulated pattern formed by the different shot groups of Figure 6; 36 201239514 Figure 8A shows that it will be formed in one An example of a rectangular pattern of a group on a surface; Figure 8B shows an example of how to use the pattern of Figure 8A formed on a surface by a non-overlapping VSB shot in the presence of mid-range scattering; The figure shows an example of a VSB shot that can be used to form a set of patterns on a surface of Figure 8A that overlaps; Figure 9B shows an example of a pattern that can be formed on a surface from a shot of Figure 9A; Figure 10 shows a conceptual flow diagram of how to prepare a surface, such as a reticle, for use in optical lithography to fabricate a substrate such as an integrated circuit on a wafer; Figure 11A shows the same A conceptual flow diagram incorporating a model-based approach and a method of seeing fractures in the design; Figure 11B shows a conceptual flow diagram of another method of combining model-based and acquaintance fractures in the same design. [Description of main component symbols] 100···Electrobeam writer system 112···electron beam source 114,120,134...electron beam 116···opening plate 118...opening hole 122···rectangular aperture plate or template Mask 124... opening or opening 126, 126A··· character 37 201239514 130... surface 132...substrate 136···blackening area 138···electromagnetic or static reduction lens M0...reduced electron beam 142... Bias 148, 412, 512, 602, 612, 712, 722, 732, 800, 852, 854, 856, 858, 860, 862, 864, 866, 868, 960, 950, 952, 954, 956, 958, 960, 962~ Layout 150... Positioning mechanism 202, 222... Cross-sectional dose curve 204, 224.. Higher threshold value 206, 226... Lower threshold 214, 216, 234, 236, 604.. width 302, 402, 502... Design pattern 304, 404, 504, 514, 606 ... line end 306, 406, 508... constant The width of the line 312, 850, 850...the line end portion 316 of the pattern 312, the pattern 312, the section 408 of the pattern periphery 408, 5〇6...the reference line 414··the line end portion of the pattern 412, the portion of the periphery of the pattern 412 518···the peripheral area 608 of the pattern 512...the dotted line

S 38 201239514 622,632,642,900·· Shooting group 624,626,634,636,638,644,646,648,650,802,804,806,808,810,812,814,816,818,820,922,924,926,928,930,932&quot;. Shooting 628··· Shooting 624 width 714,716,734 The middle portion 876 of the pattern 858 ... the narrowing region 878 of the pattern 862 ... the edge 880 of the pattern 862 ... the width 882 of the pattern 858 ... the width of the pattern 862 902, 904, 906, 908, 910, 912, 914, 916, 918, 920 ... rectangular shooting 936 ... edge 964, 966, 968, 970 ... partial pattern 980... The width of the pattern 958 is 1050...flow charts 1052, 1054, 1056, 1057, 1058, 1060, 1062, 1064, 1066, 1068, 1072, 1074, 1080, 1082, 1084, 1102, 1104, 1106, 1108, 1110, 1112, 1122, 1124, 1126, 1128, 1130, 1132, 1134, 1136, 1138, 1140 ... Step 1100, 1120... Concept Flowchart 39

Claims (1)

201239514 VII. Patent Application Range·· 1. A method for optical proximity correction (0PC), comprising the steps of: inputting an input pattern; inputting a set of OPC commands; and determining a plurality of patterns that can form a pattern on a surface Charged particle beam shot '(1) wherein the plurality of shots in the plurality of shots are heavy and 'u) wherein the pattern is the input pattern, the OPC compensated version, and ((1)) the exposure on the surface The sensitivity of the pattern to manufacturing variations is reduced. 2. The method of claim 2, wherein the determining step comprises calculating the pattern on the surface from the plurality of shots. 3. The method of claim 2, wherein the calculation comprises a charged particle beam simulation. 4. The method of claim 2, further comprising an operation step of calculating whether the calculated pattern on the surface is formed on the substrate when transferred to the substrate by an optical lithography process. The predetermined tolerance is equal to the pattern of the desired pattern for the substrate, wherein the operational steps include at least one of lithography simulation and analogy simulation. 5.- Kind for charged particle green 彡 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The charged particle beam, hitting at least two of the plurality of shots partially overlapping, and wherein the exposure pattern on the surface is sensitive to manufacturing variations 40 201239514 degree system. 6. The method of claim 5, wherein the sensitivity to manufacturing variations is reduced by increasing the edge slope compared to using a non-overlapping normal dose VSB shot to form the pattern. 7. The method of claim 5, wherein the determining step comprises calculating the pattern on the surface from the plurality of shots. 8. The method of claim 7, wherein the calculation comprises a charged particle beam simulation. 9. The method of claim 8, wherein the charged particle beam simulation system comprises one of a short-range effect group consisting of forward scatter, resist diffusion, Coulomb effect, and etching. At least one. 10. The method of claim 8, wherein the charged particle beam simulation comprises extreme ultraviolet (Euv) mid-range scattering. 11. The method of claim 8, wherein the charged particle beam simulation comprises at least one of a long-range effect group consisting of backscattering, atomizing, helium loading, and blocking filling. 12. The method of claim 5, wherein each of the plurality of shots comprises a specified dose, and wherein prior to the long range correction, the specified dose of the first shot is in the plurality of shots It is different from the specified dose of the second shot in a plurality of shots such as 忒. A method of claim 5, wherein in the decision, the pattern on the surface is a -first pattern, the method further encapsulating to produce a second pattern on the surface - Group non-overlapping positive: The step of dose-to-beam (sharp) shooting, wherein the second - 201239514 is adjacent to the second pattern. 14. The method of claim 13, wherein the short-range and/or long-range effects from the set of non-overlapping VSB shots are used in the determining step. 15. The method of claim 5, wherein the shots in the plurality of shots are variable shaped beam (VSB) shots. 16. The method of claim 5, wherein the plurality of shots are exposed in a single exposure pass. 17. The method of claim 5, further comprising the steps of: inputting a non-overlapping VSB shot having a normal dose of the pattern on the surface; and replacing the determined plurality of shots with the plurality of shots Part or all of the shots in the group VSB shot. 18. A method for fracture or mask data preparation or mask process correction or proximity effect correction for charged particle beam lithography, comprising the steps of: inputting a desired pattern to be formed on a surface; Determining that a plurality of charged particle beam shots of the pattern are formed on the surface, wherein at least two of the plurality of shots partially overlap, and wherein the plurality of shots form a pattern on the surface The pattern formed from the non-overlapping normal dose VSB shots is closer to the desired pattern. 19. The method of claim 18, wherein the determining step comprises calculating the pattern on the surface from the plurality of shots. 20. The method of claim 19, wherein the calculation comprises a charged particle beam simulation. 42 S 201239514 21. The method of claim 18, wherein the sensitivity to manufacturing variations is reduced by increasing the edge slope compared to using a non-overlapping normal dose VSB shot to form the pattern. 22. A method of mask process correction for charged particle beam lithography comprising the steps of: inputting a desired pattern to be formed on a reticle; and determining a plurality of charged particle beams Shooting, wherein at least two of the plurality of shots partially overlap, wherein the plurality of shots will form the desired pattern on the reticle, and wherein the plurality of shots are incorporated into a mask process Bridge is right. 23. A system for fracture or mask data preparation or mask process correction or proximity effect correction for charged particle beam lithography, comprising: a device capable of determining a plurality of patterns to be formed on a surface A charged particle beam shot wherein at least two of the plurality of shots partially overlap, and wherein the exposure pattern on the surface is less sensitive to manufacturing variations. 24. The system of claim 23, wherein the sensitivity to manufacturing variations is reduced by increasing the edge slope as compared to using a non-overlapping normal dose VSB shot to form the pattern. 25. A system for optical proximity correction (OPC) of a design, the design comprising a pattern to be formed on a surface, the system comprising: a desired pattern for one of the substrates; and a device, It is capable of determining a plurality of charged particle beam shots (1) wherein 43 201239514 at least two of the plurality of shots overlap, (ii) wherein the plurality of shots form a pattern on the surface, which is used in the optics The desired pattern for the substrate will be formed during the lithography process, and (iii) where the exposure pattern on the surface is less sensitive to manufacturing variations.