TW201040642A - Electronic devices having plastic substrates - Google Patents

Abstract

A method of manufacturing a thin film electronic device comprises applying a first plastic coating (PI-1) directly to a rigid carrier substrate (40) and forming thin film electronic elements (44) over the first plastic coating. A second plastic coating (46) is applied over the thin film electronic elements with electrodes (47) on top, with a portion lying directly over the associated electronic element, spaced by the second plastic coating. The rigid carrier substrate (40) is released from the first plastic coating, by a laser release process. This method enables traditional materials to be used as the base for the electronic element manufacture, for example thin film transistors. The second plastic coating can form part of the known field shielded pixel (FSP) technology.

Description

201040642 VI. Description of the invention: [Technical field to which the invention pertains] (4) The manufacture of an electronic device (e.g., an active matrix _ + the present invention relates to a plastic substrate). [Prior Art] The most common form of active matrix display is an active matrix liquid crystal display (AMLCD). AMLCDs are typically fabricated on large 7 mm thick large glass substrates. A unit requires two slabs' so that the finished display is only over 1.4 mm thick. Mobile phone manufacturers and some laptop manufacturers need thinner and lighter displays, and the finished unit can be thinned (usually) to about 0.8 mm thick in an HF (hydrofluoric acid) solution. Mobile phone manufacturers ideally expect these displays to be even thinner, but it has been found that units of less than 0.8 mm thick manufactured by this method are extremely fragile. The HF thinning method is not satisfactory because it is a wasteful treatment using hazardous chemicals that are difficult to handle safely and economically. Due to the indentation of the glass, there is also some yield loss during the etching process. Many mobile phone applications want to use the thinnest and lightest glass or plastic substrate display possible. (Our) has recognized that light, rigid and thin plastic AMLCDs are profitable as an alternative. Recently, interest in plastic displays has increased, in part due to the increasing use of color AMLCDs in mobile phones and PDAs. Recently, a large number of researches have been conducted on AMLCDs and organic light-emitting diodes (OLEDs) on a plastic substrate. Despite this interest, there is still a need for a rational manufacturing approach for mass production of plastic displays (manufacturing 144577.doc 201040642 route) ° has been reported for the manufacture of thin film transistors (tft) or display on plastic substrates. Many different ways. A technique is described in WO 05/050754 in which a substrate arrangement comprising a rigid carrier substrate and a plastic substrate over the rigid carrier substrate is fabricated. After forming the pixel circuit and the display unit over the plastic substrate, the rigid carrier substrate is released from the plastic substrate. This can be accomplished using conventionally known substrate treatment, processing, and unit fabrication. 〇 In order to release the plastic substrate from a glass carrier, a heating method is usually used. The electronic component formed on the plastic substrate and the substrate is released from the glass carrier by heating the glass and the plastic substrate. There are various methods by which the plastic substrate can be separated from the glass carrier. The release method suggested in W0 05/050754 is - laser stripping (10) lift-off processing. Laser light of an ultraviolet wavelength is used to cause the plastic substrate to be peeled off from the underlying carrier. It is recommended that this release method be a photoablation process due to multiphoton chemistry (including localized heating). One of the suggested materials for this treatment is polyimine, and the reason for choosing polyimine is the high temperature stability of polyimine and the high absorbency of uv energy. There are several potential problems with peeling the plastic substrate from the glass using a heating effect. Sufficient energy is required to cause the peeling to occur without damaging the plastic substrate or the components formed on the plastic substrate, which can cause thermal expansion effects. When using a laser lift-off treatment, a longer wavelength in the UV spectral range is desirable because the shorter wavelength is more absorbed by the glass substrate, making the release of the laser 144577.doc 201040642 less political. For example, commercially available lasers operating at 3-8 nm or 351 nm are preferred. The energy absorbed in the plastic layer at this longer wavelength is statistically distributed without the need for complete heating within the plastic polymer molecules. This causes a localized heating effect, which in turn can cause damage to the plastic substrate or the ampule. This can also result in partial peeling or poor peeling from the carrier. EPLaR (laser-release plastic-based electronics) processing can be used in principle with a variety of different materials, but the ideal substrate for this EpLaR treatment is considered to be a polyimide, but this is not suitable for most coffee display effects. use together. EPLaR Treatment - The example uses the following steps: - Start with spin coating of polyimine onto a glass substrate. It is important to use the correct polyimine with a low coefficient of thermal expansion of the father. Typically, 1 μm of polyimine is applied, but layers in the range of 3 to 25 μm or larger can be used. This % St imine will eventually form a plastic substrate with a U-product. A passivation layer of tantalum nitride is deposited on the polyimine. Manufactured from standard amorphous germanium thin film transistors (a_Si TFT). An electrophoretic foil is laminated to the TFT array to obtain a fully operational electrophoretic display, and - a thin polyimine, between the glass substrate and the TFT array. - Exposing the back of the polyimine to a laser that can pass through the glass but is strongly absorbed in the polyimide. This actually means that the laser must be launched in the spectral range from 300 nm to 41 nm. - Excimer laser 7 144577.doc 201040642 Used in conjunction with the wavelength of 351 nm, but other wavelengths such as nanometers can be used. The laser is strongly absorbed in a thin (possibly several angstroms) polyimine layer of the burnt surname. This leaves a very thin layer of polyimine (usually less than 15 nm) on the glass and releases most of the polyimide layer. In fact, the laser-released polyimide layer will be 丨〇 micron thick overall. - The polyimine treated by Xiao in EPLaR has excellent properties in terms of mechanical strength, maximum processing temperature, stability and resistance to handling chemicals. 〇 This device can be used for reflective displays and launch displays, but it has yellow pigments. This pair of transmissive displays, where light passes through the substrate, is not ideal. Even more pertinent, tr, these polyimines have any optical birefringence induced by the spin coating process. This means that the polyimide substrates are not suitable for use with any display effect that includes most LCD effects, which uses polarized light. Applicants have performed experiments using a transparent plastic layer (anthrone resin, bcb, and parylene) as a substrate and a lower absorbing layer (e.g., amorphous). These 透明 transparent plastics were found to have lower strength and decompose when the laser is released. In addition, the remaining difficulties are proper handling of amorphous germanium or treatment of temperatures at the TFT standard and proper disposal of certain processing chemicals. SUMMARY OF THE INVENTION According to the present invention, a method of fabricating a thin film electronic device is provided, the method comprising: applying a first plastic coating directly to a rigid carrier substrate; forming a thin film electronic component over the first plastic coating; Applying a second plastic coating over the thin film electronic components; 144577.doc 201040642 'each electrode together with at least one phase and the electrode comprising directly located at the electrode associated with the second plastic coating The electronic components forming the electrodes together form a circuit, and a portion of the electronic components above the associated electronic components are separated by the second plastic coating; the plastic coating releases the rigid carrier from the laser release treatment — Body substrate. This method enables the use of a conventional material as a substrate for the manufacture of the electronic component (e.g., a thin film transistor). The second plastic coating can form part of a known field masked pixel (FSP) technique. The high temperature processing step of the electronic component fabrication is performed on the first plastic coating and the first plastic coating provides strength during the release process. The invention may be used to form a split having only a plastic substrate, or the device may have a glass side and a plastic side. Applying the first plastic coating layer may include: applying a first plastic layer; forming an alignment with the thin film electrical and metal patterns formed on the first plastic layer, the first plastic layer having sub-elements a pattern portion at a position; a second plastic layer is formed over the metal pattern. A metal structure embedded between the plastic layers is provided. By aligning the metals B to the electronic components, the metal portions can provide a masking functional area that is aligned with the components. For example, the metal pattern can be used as a mask to etch the first plastic layer, thereby forming a portion of the first plastic layer that is aligned with the thin film electronic components. 144577.doc 201040642 If the invention is used to ugly; 5 + τ is turned into an LCD display, then the plastic is removed from the pixel region. This means that a birefringent plastic such as a chitosan can be used. The polyimine is left as a grid below the display area, but it can also be left as a continuous layer below the edge interconnect area to provide mechanical support a for no mechanical application during plasma characterization Force, so the strength of the second plastic coating is sufficient.偏振 After the plastic kick coating, the polarizer can be laminated to the array to complete the cell fabrication. The method can include providing a color chopper portion in a space between portions of the first plastic layer.士卜:Leave _ + &> ,. This provides color filter alignment on the previous active board. A sealing layer can be provided over the portions of the color dimmers. Instead of forming the plastic portion, the first plastic coating can be completely removed after the rigid carrier substrate is released. The first: plastic coating may comprise polyimine. A passivation layer can be formed over the first plastic coating prior to forming the thin film electronic components. This electronic component manufacturing step provides a suitable surface. The passivation layer can be packaged = niobium nitride. The second plastic coating is preferably a transparent plastic having no birefringence and having a thickness of from 1 micron to ίο micron. This can function as a field mask in the _Fsp pixel, in which case the thin film electronic components include field shielded pixel film transistors. The method can be a method for manufacturing an active matrix display device, wherein: / forming a thin film electronic component comprises forming a pixel electric H4577.doc 201040642 road array above the plastic substrate, and wherein the method includes -> A display layer is formed over the stray +^ pixel circuit array prior to releasing the rigid carrier substrate from the first plastic coating. The method further or further includes fabricating a second substrate configuration, and wherein the square of the pixel circuit array is formed into a display layer including mounting the first substrate configuration and the second substrate configuration and also two 4J·, The first electrical material is sandwiched between the substrate configurations, and the active matrix display device includes a substrate and a first substrate, and the photovoltaic material is disposed between the substrates. This provides a method for manufacturing a display. Manufacturing the second substrate to apply a plastic coating to a rigid carrier substrate and releasing the rigidity from the plastic coating by a laser release treatment after mounting the first and second substrate configurations Carrier substrate. The present invention also provides a thin film electronic device comprising: - a support structure comprising a plurality of plastic portions, each plastic portion having a - metal coated portion underneath and having a filling space between the plastic portions; a passivation layer Above the support structure; a process, a thin film electronic component, the thin film electronic element is above the D-passivation layer and aligned with the plastic parts; and a plastic coating is disposed above the thin film electronic components And electrodes, which are formed on the upper surface of the plastic coating together with at least one associated thin film electronic component, and the electrode comprises directly associated with the associated electron The element is Μ + + + π 3 - a trowel which is separated from the associated electronic component by the plastic coating. [Embodiment] 144577.doc • 10-201040642 An example of the present invention will now be described in detail with reference to the accompanying drawings. The use of the component symbols in the scope of the patent application is to be understood as an understanding of the invention, and is not intended to be limiting. In the processing sequence diagram, only the component symbols of the parts of the structure associated with this part of the processing flow are given. It will be immediately understood that other features are still the same as those in the previous processing flowchart. - The present invention provides a manufacturing method that can use a -field-shielded pixel ❹ AM-LCD processed-laser release (EpLaR) process to allow for a flexible & color LCD display in a standard πτ factory. Before explaining the present invention in detail, the field masking pixel technique will first be described. A standard τρτ structure that can be used in more than 90% of current TFT LCD display modules (laptops, LC-TVs, mobile phones, etc.) has a thinner nitride nitride passivation layer over the TFT, shown as a SiN2 in the cross section of ^(4). Figure 1 (a) shows a cross section of a standard TFT structure having a SiN passivation layer

〇 face. Figure 1 (b) shows a cross section of a field of a shielded pixel TFT with a thicker polymeric passivation layer. In Fig. 1(a), the glass substrate is shown as 1 〇, and a -first gate dielectric nitride layer 12 is provided over the substrate. The second nitride layer 14 is used as a passivation layer. The ITO pixel electrode is shown as 16 and the pixel TFT is shown as 18 〇. Figure i(b) differs in that the second tantalum nitride layer 14 is replaced by a polymeric dielectric layer 20. Cerium nitride (SiN) has good dielectric and passivation properties, but it does not apply. 144577.doc 11 201040642 is used to deposit SiN layers over 0.5 microns thick, and typically uses 〇^ microns to 0.4 microns. The SiN has a dielectric constant of "the dielectric constant. - a suitable thin layer group" means any conductivity using SiN as a dielectric:: has a higher capacitance. The result of this is that IT pixels are not allowed to be covered on metal lines or TFTs. The voltage applied to the rows changes at each line addressing time and if the ITO is above the rows, the capacitive coupling can change the voltage across the pixels, resulting in vertical crosstalk. μ If the pixel is above the TFT, m can act as a top closed to partially turn on the TFT in the off state, again causing vertical crosstalk. Ιτ〇 can be located above the column 'because this only changes the voltage once per frame immediately before the re-addressing line. This has no appreciable effect on image quality. The LCD material in the display only limits the effective optical aperture of the LCD display by responding to the field induced by the voltage on the pixel and not switching the position of the pixel in the standard TFT structure in the region without the ITO pixel. 'As shown in Figure 2 (a). "Figure 2(a) shows the layout of a standard TFT structure, and there is no ιτ〇 pixel "overlay on the line or TFT. The LCD switches only in the area above the 16το pixel 16. The column line is shown as 22 and the row line is shown as 24, and the pixel electrode ^ is contacted by the contact hole 26. Figure 2(b) shows the field mask pixel having the row and the IT pixel electrode on the TFT. The layout of the TFT structure. The area of the 1TO pixel mask is larger than the area in the dry structure shown in Fig. 2(a). Specifically, the ITO pixel electrode which forms a package together with the TFT is directly associated with Above the TFT, there is a limb, and the ITO pixel electrode is located above the gate of the associated TFT and above the channel 144577.doc 201040642. Use the field mask pixel shown in the cross section in Figure 1 (b) (Fsp The structure increases the effective optical aperture of the pixel. In this case, a thicker polymeric layer replaces the thinner tantalum nitride passivation layer of the standard TFT structure. The polymeric layer is typically 2 microns or 3 microns thick and typically has 3 A dielectric constant. This means the thickness - a factor that has increased by 10 (from micron to 3 microns) and the dielectric constant has been reduced by a factor of 2. This reduces the capacitance by a factor of 20. This is low enough. By capacitive coupling from row 0 or by turning on the back channel of the TFT The ITO pixel 16 is overlaid on the row and on the TFT without causing vertical disturbances. It is obvious that the passivation layer polymer must be highly transmissive and have no birefringence because it is located in the optical path of the light passing through the LCD. BCB (benzo ring) Butene) is commonly used as a polymer in FSP structures, but it is extremely expensive and in principle other liquid plastics can be used for liquid casting. Mobile applications require thinner displays ^ TFTs are usually fabricated in 7 mm thick glass Two substrates are required on the substrate to make a standard lcd. Adding a biased mode and an optically reinforced film makes the AMLCD at least 1.4 mm thick. This is too thick for mobile phone applications, so it is usually borrowed from a worm. The display is thinned until the two substrates are Ο]mm thick before attaching the polarizer. This is a wasteful and polluting process and the display is still 〇6 mm thick. Manufacturers have found that if they try to make the display Further thinning, the display is easy to break. There are also difficulties in achieving high optical aperture AMLCD. There are two different forms of pattern alignment used in the manufacture of AMLCD. The first type is photolithography. It is used to accumulate the pattern of different metals, dielectrics and semiconductor layers on the substrate. This technology is highly accurate, and for AMLCD manufacturing, it is usually cited on a substrate that can be 2 meters by 2 meters in size. With an alignment accuracy of about 2 microns, the alignment accuracy is usually less than 1 micron. The second alignment is a board-to-board coupling Q. This aligns the sides of the Lc unit together. For an AMLCD pass$ The active matrix array that will be present on the board and the color filter on the other board, the black mask and the ITO, as shown in Figure 3(a) ° eight through the midpoint of the pixel - cross section The active board 3 被动 and the passive board 32 are shown. In Figure 3(4), q is the gap between the rows and the pixels, which must be greater than about 1 micron to prevent excessive capacitive cross-coupling. L is the overlap distance between the black mask 34 and the IT0 pixel. ^ is equal to the minimum gap size plus the maximum photolithography misalignment gap. L2 is the maximum misalignment distance between the two plates. The board-to-board alignment tolerance is far beyond the optical lithography alignment tolerance. There may also be some movement during the contact and at the same time the seal line is solidified, so the plate-to-plate lightness is close to 1G micron. For high quality displays, the key is that light can only pass through the pixel ιτ〇, which is modulated to give the desired light transmission level. Any light that can pass around the pixel and reach the viewer will reduce the contrast ratio and mean that the black state is not as dark as it can. This reduces the display performance. Therefore, the black mask must be large enough to accommodate the alignment of the plates. This reduces the optical aperture. The larger the black material, the smaller the optical aperture, & means that more power must be used for the light source to achieve the necessary brightness. The picture is called the active plate and the passive plate for the "large pore" FSp AMLCD. M4577.doc -] 4- 201040642 Alignment. L is the overlapping distance between the black mask and the ITO pixel. It is equal to the maximum misalignment distance between the two plates. Therefore, the FSP structure increases optical aperture, especially for small pixels. Maximizing optical aperture is important to maximize the brightness of the display and reduce power consumption. Therefore, board-to-board accuracy can effectively limit the number of such parameters. One significant way to improve this optical aperture is to move the color filter to the active plate. For glass substrates, this can be done in two ways. Both methods have been demonstrated in research laboratories' but are not used in mass production. The first method is to place a color filter under the TFT array. This has been reported to increase the optical aperture of a 15 inch XGA monitor from about 6% to 80%. This color filter is usually made! Made from a micron to 2 micron thick dyed polymer and the dyed polymer gives a very irregular profile. There are serious practical difficulties in processing TFTs on such irregular surfaces, but the true problem with this process is the processing temperature. The color filters are prohibited from being heated above about 150 ° C. Otherwise the color filters begin to decompose and lose their color saturation. The TFT is usually deposited at over 3 °C. This temperature can be reduced to nearly 200 ° C, but if this temperature continues to be less than 2 〇 (TC, the TFT becomes extremely electrically unstable during an acceptable display lifetime. TFTs with poor color saturation or instability The second technique is to make the color filter above the TFT array. The easiest way to do this is to place a color filter on top of a standard TFT array. This is not practical because of a thicker polymerization. The layer is placed above the pixel electrode to significantly increase the driving voltage and introduce image residue due to the movement of charge in the polymer. A TFT array can be fabricated and a color filter can be deposited, I44577.doc -15- 201040642 MIT◦ Placed above the color concentrator and with electrical connections through the color illuminating layer. This is - difficult processing, ie control of the required good gradual slope on all color dynode layers; with for deposition Limiting the temperature and the precise and reliable patterning of the top layer of the polymeric layer in the rugged zone. This treatment does not indicate that it has been made into a manufacturing stage. The present invention provides an improved process. Three examples were used to make a plastic (10) using a modified EPLaR process, and an example was given to fabricate a high resolution thin cell using a single-glass substrate. In the first two embodiments, 'standard color filter was used. Optoelectronic technology. Implementing such LCDs in standard TFt Weiwei is the simplest, but compared to standard glass substrate lcd, which has several additional processing steps. In the third embodiment, the scratched side has been removed. After the glass substrate is etched and the polyimide film is etched, the film is sprayed onto the TFT side of the plastic film. The ink display has a maximum porosity and a minimum of processing steps. These plastic displays also benefit from the need for board-to-board alignment during cell fabrication. Referring to Figures 4(4) through 4(4), the first implementation, as shown in the series, shows the processing sequence at the center of the TFT array during processing. Specifically, Figure 4 shows an EPLaRLCD with FSP pixels and a supporting polyimine mesh. This embodiment is fabricated using a rod-aligned LCD unit with a polyimide support layer and an Fsp structure. Polyimine branch Grid 0 Figures 4(a) through 4(d) show the processing steps for forming an active panel of an LCD. Figure 4(a) shows a glass substrate 40 having a thin (5" to 5" nanometer. 144577.doc •16- 201040642 Polyimine layer (PI-1) followed by deposition and patterning of a metal grid 42 (eg, sprayed molybdenum). The grid is in the column when the TFT array is completed. And below the line. Figure 4(b) shows a second, thicker spin on the surface of the board (2 microns to

A 10 μm polyimine layer (PI-2) followed by a first SiN passivation layer SiN1 and an array of TFT 44. The steps for forming the same are the same as used in

The steps in the existing EPLaR process. Polyimine can easily withstand standard processing temperatures and chemicals. Figure 4(c) shows the completed tft array with field mask pixel processing, giving a polymeric passivation layer 46 over the TFTs and a pixel electrode 47 associated with each of the TFTs. This layer 46 is a transparent non-birefringent plastic, as explained above, such as BCB. The layer 46 preferably has a thickness from 丨 micron to 1 〇 micron, more preferably from 1 micron to 5 microns, and has a dielectric constant of 丨 to 5. The electrodes are located above the TFTs, as explained above, thus forming an Fsp configuration. Figure 4 (4) shows a (10) polyimide alignment layer 48 spin coated on the surface of the TFT array. Use - rubbing treatment to orient the lc material. The spacer 50 is then added. These spacers 5 are designed to keep the Lc cell pitch constant and do not allow the substrates to separate. Both the viscous sphere defined by photolithography and the active unit spacer have been reported for this purpose. 40) to Figure 4(h) shows the steps of manufacturing a passive board. In the figure, a color chopper glass substrate 60 is also coated with a thin polyimide layer and a metal grid 62 surrounding the pixels. Figure _ shows the thicker polyamidamine 144577.doc -17- 201040642 layer (PI-2) and the passivation layer SiNl applied to the color filter substrate. The first few steps of the same processing as the TFT board have been handled so far. Figure 4(g) shows a color filter material 63 applied to the passivation layer SiN1 using a standard color filter process. This is typically formed by a 2 micron to 3 micron thick colored polymer layer patterned into a pixel shape. A black mask layer will typically be present beneath the color pixels used in the standard glass AM-LCD, but this can be replaced by a metal grid 62 in function. Therefore, this process does not increase the mask count for the color filter panel. Figure 4(h) shows a planarization layer 64, an ITO common electrode layer 66, and an LCD alignment layer 68 on top of the color filter, which can be implemented using standard AM-LCD processing. 4(i) to 4(q) show the steps of manufacturing a display. Figure 4(i) shows the fabrication of a unit that involves aligning the top and bottom panels (active panel 40 and passive panel 60), again being a standard AMLCD process. The spacer defines the cell gap. For smaller units, the glass plate will be cut into strips at this stage. Figure 4(j) shows cell filling with LCD 70 using a standard AMLCD process. Usually after this step the strips will be separated into individual units. Figure 4(k) shows the removal of the glass substrate 60 on the side of the color filter by a laser process such as that used in the EPLaR process. The laser light is absorbed in the polyimide layer PI-1 of the color filter substrate. The remaining major structural layer is polyimine, which has good strength and has proven to be suitable for use in conjunction with laser release. In Figure 4(1), the top polyimine layer is shown as being etched by oxygen plasma in a reactive ion 144577.doc -18- 201040642 surname (RIE) system. Use a metal mesh as a mask. Since the RIE is highly anisotropic, there will be very little bottom etching even below the metal grid. Pjq will be completely removed and PI_2 will be removed anywhere that is not covered by the metal mesh. The RIE etch stops at the tantalum nitride layer of the color filter substrate to form a metal grid because the oxygen plasma does not etch such materials. Figure 4(m) shows a polarizer sheet laminated to the top of the TFT array. This ^ gives , , , ° to the array for greater mechanical strength. Other optical reinforcing sheets and protective sheets can also be laminated at this stage. After stacking the polarizer sheets, column interconnects and row interconnects will be performed, preferably using a wafer glass bonding (chip_on_Glass) process. Figure 4 (n) shows the laser release of the active plate glass substrate 4 . As shown in Figure 4 (〇), the unit for processing is flipped. In Fig. 4(p), the two polyimide layers P1·1 and PI-2 on the TFT active plate are RIE-etched down to the metal mesh and the layer SiN1 by 〇2 plasma. 〇 Figure 4(q) shows an active plate polarizer 72 that is laminated to complete the process, any optically reinforced film or protective film required to achieve the desired performance of such cells. Since the polyimine mesh on the TFT panel is located below the columns and rows of the TFT array, it will not affect the optical performance. The polyimide layer can also be left in the interconnected regions to provide additional mechanical strength in such regions. Figure 5 shows a macro view of the display fabrication and interconnection process and shows the polyimide (and metal mesh material) 80 remaining below the interconnected regions. The region 81 can be an optically active region of the unit of the polyimine mesh between the pixels. 144577.doc •19· 201040642 Right, the outer metal mesh can be removed by a soak etch. The explanation of the invention as set forth above demonstrates that the occurrence of a combination in the middle of the display area has not described the interconnection of the driver electronics or the scribing process and breaking process shown to be separate from the parent glass. In fact, muscle aR. A number of high-intensity ones allow for the interconnection of flexible displays with materials that are identical to the interconnects of the glass. Figure 6 shows glass scribe lines and cell fill sequences for many small displays performed on large glass substrates.

. . In Fig. 6(a), the display area 82, which is to be filled with liquid crystal material, is first defined by alignment of the active and passive plates* by a printed seal line around the pixel array. There are cell spacers in the display area. First, the line σ is lined horizontally to the glass sheet. The passive board is scribed by a line so that it is the same as the unit. The active board is scribed so that there is a frame-like protrusion extending beyond a single 兀t (see Figure 7 below), which unit is used for Tcp (Tape chip package) or c〇G (wafer glass) The board engages the area of the connector.

Then & scribes the display into strips. This corresponds to the step of Figure 4 (丨) above. Cell filling is performed on a plurality of cells within the strip as shown in Figure 6(c). The filling system passes through a small gap in the sealing line which is sealed after the unit is filled. This corresponds to step 4(j). Figure 6(c) shows a vertically scribed glass strip. The TFT glass is again scribed to capture an edge for the column interconnect while the passive scribe line is close to the edge of the display is. 144577.doc •20- 201040642 Figure 6(d) shows the single elementization of the unit (singUiati〇n). At this stage, the interconnection for the standard display will be performed on the glass. Electrical interconnections are made after the unit is single componentized. The scribe lines for the two substrates are not the same. Figure 7 shows the relative sizes of the substrates after fabrication of the cells, and wherein TCP (Tape Chip Package) or COG (wafer glass plate bonding) is attached to the TFT substrate. - In Figure 7(a), the substrate size and position for the TCP driver are shown.

The 0-dial CP drive is shown as 86 and the row TCP drive is shown as 87. The TFT substrate 88 is larger than the color filter substrate 809, and extends to give frame-like protrusions on both sides for the column lead-in area and the row lead-in area. Figure 7(b) shows the substrate size and position for the c〇G driver. The row wafer glass bond exhibits a 90 and the array wafer glass plate bond exhibits 92. A drive pirate signal foil is shown as 94. During the rie process in Figure 4(p), the driver foil has been applied to the TFT substrate. The foils may be protected only by having a cut within a shield that overlies the display during the RIE process, exposing the exposed display area while protecting the interconnect regions and the driver foil, as shown in FIG. Figure 8 shows the RIE of a 7-sheet substrate using 〇2 plasma 96 and PI-2. The plasma shield 102 protects the interconnect foil 1〇〇. A support plate 104 is used during the etching. Zone 1 〇6 is the location of the etched PI 2 polyimine layer. Multiple displays can be etched simultaneously and the interconnect boxes can be bent down into the grooves to improve productivity. A second embodiment is shown in Figure 9, in which all external chiral imines are removed. Figure 9 shows a completed display device, corresponding to Figure 4(q). Since there is no (iv) imine left on the outer side of the LCD unit, some processing steps of 144577.doc •21 - 201040642 may be omitted, that is, the layers in Figure 4(a) and Figure 4(e) above and the metal mesh. ♦ The mouth is removed from the metal grid due to the color of the light, so it is necessary to re-enter the black mask layer 110 in the color filter to prevent light leakage, as shown. A disadvantage of complete removal of the outer polyimine is the removal of the salicinite from the shoulders in the display area, and the continuous layer of the rejuvenation in the interconnected area. The specific design and design of the application will determine whether this is feasible. A lower cost barrel etcher instead of a RIE system can then be used to remove the polyimine because anisotropy is not necessary. A third embodiment using an external color filter is shown in FIG. This has significant advantages because all patterning is performed on the active board, eliminating the need for precise board-to-board coupling and it can have larger optical apertures than any other display currently made. 10(a) to 10(d) correspond to Figs. 4(a) to 4(d). Passive board processing is different. Figure (e) shows the polyimide layer 120 and the SiN passivation layer SiN1 applied to the passive plate. In Figure io (f), a transparent polymer 122 (e.g., BCB or fluorenone) is applied to SiN1, followed by IT〇 123 and polyimine alignment layer 124. The Ting and δ-polyimide alignment layers are standard lcd treatments. Cell fabrication and filling are shown in Figure 10(g) and Figure l(h). This is simpler to assemble than a standard shirt color LCD because there is no pattern on the passive board. This means that there is no need to precisely align the two boards. For smaller displays, the unit will be cut into strips at this stage. In Fig. 10(i), a laser release is used to remove the glass substrate on the passive plate side of the display. Figure 10 (1) shows the plasma etch to remove the poly phthalate from the passive plate side of the display. 144577.doc • 22- 201040642 Amine.

1 〇(k) shows a polarizer sheet 126 that is applied to the side and then flipped for further processing. Passive board to the display

Ο In Fig. 10(1), the rie etching of the polyimide layer is carried down until it acts as a button-stopping siN1. This leaves well 128 above the pixels of the TFT board. To successfully ink-jet print color chopper inks in such wells, the SiNl at the bottom of the wells is hydrophilic and the metal mesh at the top of the polyimine rows is hydrophobic. Oxygen and fluorinated gases can be used for this purpose. Figure 1 (m) shows a first ink 130 (e.g., blue) that is injected into each of the third polyimine wells. Inkjet printing into passive boards has been used to mass produce color filters. Color filter inkjet printing is performed with red and green inks to form RGB color filter 132 in Figure l(n). In Fig. 1 (〇), an overcoat 134 is applied to seal the color filter. This can be done by ink jet printing or spin coating. Fig. 10(P) shows a polarizing plate 13 6 laminated on SiN1 on the active plate side of the array. In this embodiment, no polyamine for reinforcement is left on the side of the passive plate. Since there is no drive connection on this side, polyimine will probably not be needed, but polyimine may be left on the substrate if desired. The above process can be modified to leave a glass plate, but the passive plate glass substrate in step 10(i) above is not removed. This will result in a thinner glass display with all of the added advantages: advanced optical aperture and complex processing limited to one board; and no need for precise board coupling. The polarizer foil will then be applied to the glass substrate. The glass substrate can be thinner than the substrate used for standard TFT processing because it does not require high temperature processing, (four) or rotation. If necessary, the touch can also be thinned in the usual way. Those skilled in the art will appreciate various other modifications. [Simplified Schematic] Figure 1(a) and Figure 1(b) show the standard TFT structure and a horizontally shielded pixel tft; Figure 2(a) and Figure 2(b) show the standard TFT structure and field. A plan view layout of the masked pixel structure; Figures 3(a) and 3(b) show a conventional AMLCD structure and a "large aperture" FSP AMLCD structure; Figure 4(a) through Figure 4(q) are shown for use in this A processing sequence of the first method of the invention; FIG. 5 shows a macroscopic view of the display fabrication and interconnection process; and FIGS. 6(a) to 6(d) show the glass for many small displays performed on a large glass substrate. Scribing and cell filling sequences; Figures 7(a) and 7(d) show the substrate size and position for the TCP driver and for the COG driver; Figure 8 shows how a reactive ion etching process can be used to expose the display area At the same time, the interconnect region and the driver foil are protected; Figure 9 shows a second embodiment of the apparatus of the present invention; and Figures 10(a) through 1(p) show a processing sequence for a second method of the present invention. [Major component symbol description] 10 Glass substrate 144577.doc -24- 201040642 Ο ❹ 12 First gate dielectric tantalum nitride layer 14 Second tantalum nitride layer 16 ΙΤΟPixar electrode 18 Pixel thin film transistor (TFT) 20 Polymerization Dielectric layer 22 column line 24 row line 26 contact hole 30 active board 32 passive board 34 black mask 40 carrier substrate 42 metal grid 44 thin film electronic component 46 second plastic coating 47 electrode 48 LCD polyimide alignment layer 50 spacer 60 color filter glass substrate / passive board 62 metal grid 63 color filter material 64 flattening layer 66 ITO common electrode layer 68 LCD alignment layer 144577.doc -25- 201040642 70 polarizer sheet 72 active Plate Polarization Benefit 80 Polyimine 81 Area 82 Display Area 84 Lined 86 Columns TCP Driver 87 Rows TCP Driver 88 TFT Substrate 89 Color Filter Substrate 90 Rows Wafer Glass Bonding 92 Columns Wafer Glass Bonding 94 Driver Signal Foil 96 RIE 02 plasma 100 interconnect foil 102 plasma shield 104 support plate 110 black mask layer 120 polyimine layer 122 transparent polymer 123 ITO 124 Imine alignment layer 126 polarizer sheet 128 well 144577.doc -26- 201040642 130 132 134 136 PI-1 PI-2 o color filter partial sealing layer protective film polarizer sheet polyimine layer polyimine层〇144577.doc -27-

Claims (1)

201040642 VII. Patent application scope: 1. A method for manufacturing a thin film electronic device, the method comprising: directly applying a first plastic coating (PI-1) to a rigid carrier substrate (40); Forming a plurality of thin film electronic components (44) above the layer; applying a first plastic coating (46) on the thin film electronic components; 0 forming a plurality of electrodes (47) over the second plastic coating, each electrode An electronic component associated with the $ 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至And the fine carrier substrate (4〇) is released from the first plastic coating by the laser release treatment. 2. The method of claim 1, wherein applying the first plastic coating comprises: applying a first plastic layer (ΡΙ-1); forming a metal pattern (42) over the first plastic layer, the first A plastic layer has a pattern portion aligned with the location where the thin film electronic components are subsequently formed; and a second plastic layer (ΡΙ-2) is applied over the Hei Meng pattern. The method of the second member 2, further comprising using the metal pattern (42) as a mask to name the first plastic strip (ρΜ) to thereby form a first plastic layer aligned with the thin film electronic component such as ° section. 4- If the request item 3$·*·, earth, square, further includes a color filter portion (13〇) provided in the space (128) of the first plastic layer portion 1. 144577.doc 201040642 5 'A method of claim 4', further comprising providing a sealing layer (132) over the color filter portions. 6. The method of claim 1, further comprising completely removing the first plastic coating (PI-1) after releasing the rigid carrier substrate. 7. The method of any of the preceding claims, wherein the first plastic coating (PI-1) comprises a polynymine. 8. The method of any of the preceding claims, wherein the method comprises forming a passivation layer (SiN1) over the first plastic coating layer prior to forming the thin film electronic component. The method wherein the purification layer (s wrist) comprises nitrite. The method of any one of the preceding claims, wherein the second plastic coating (PI 2) is a transparent plastic having no birefringence and having a thickness of from 1 micrometer to 10 micrometers. 11 • As described in the claim, the sub- (44) includes a plurality of field-shielded pixel film transistors. 12. The method of any of the preceding claims, wherein the method for manufacturing a four-momentary device comprises forming a thin film electronic component (four sentences comprising forming a pixel circuit array over the plastic side panel (four), and wherein The method further includes forming a display layer (LCD) over the circuit array before releasing the rigid carrier substrate from the 4th (d) coating. The method of 13·Π:12 The second substrate is provided with a display layer (10) formed above the pixel circuit array. The first substrate arrangement is mounted and the k substrate is disposed between the substrate configurations, and the active moment ag_strong electric material is The Wang Qin matrix is not provided to include a substrate and a second substrate and the photovoltaic material is sandwiched between the substrates. 14. The method of claim 13, wherein the manufacturing of the second substrate comprises Applying a plastic coating (PI-1) to a rigid carrier substrate (60) and applying a laser release coating from the plastic coating after the first substrate configuration and the second substrate configuration are mounted The rigid carrier substrate (60) is released. A thin film electronic device comprising: a support structure comprising a plurality of plastic parts (ρι_2), each of the plastic parts having a metal coating portion (42) underneath, and a filling space between the plastic parts; a purification layer (SiN1) 'over the support structure; a right dry film electronic component (44), which is above the passivation layer and aligned with the plastic portions; a plastic coating (46)' Above the thin film electronic components (44); and right stems, the electrodes (47) are above the plastic coating, and the electrodes (47) together with at least one associated thin film electronic component (44) form an electrical The circuit 'and the electrode includes a portion directly above the associated electronic component' that is separated from the associated electronic component by the plastic coating. 144577.doc