TW201007993A - Optical device shaping - Google Patents

Abstract

Embodiments described herein provide methods for manufacturing an optical device having shaped sidewalls. A desired substrate shape corresponding to an LED or other optical device can be determined. The optical device can have a substrate comprising an exit face and sidewalls positioned and shaped to reflect light to the exit face to allow light to escape the exit face. A substrate material can be shaped based on the desired substrate shape for one or more LEDs. Shaping can be done using a wire saw, etching, ultrasonic shaping or other technique.

Description

201007993 VI. Description of the Invention: [Technical Field of the Invention] This disclosure relates to optical elements and, in particular, to light-emitting diodes ("LEDs"). More specifically, this disclosure relates to forming optical elements. U.S. Patent Application Serial No. 61/75,972, to U.S. Patent Application Serial No. 61/75,972, filed on Jun. The priority of the priority. This application also claims to be part of the continuation application of U.S. Patent Application Serial No. 11/906,194, entitled "LED System and Method", filed on Jan. 1, 2007 by the inventor. U.S. Patent Application Serial No. 11/906, No. 19, entitled "LED Systems and Methods", filed by Inventor Duong et al. in the first quarter of 2007, under 35 USC. The interests of the priority, each of the applications of the syllabus to the United States Provisional Patent Application No. 60, entitled "Formed Light Emitting Diode", filed by the inventor Duong et al. on October 2, 2006 U.S. Provisional Patent Application Serial No. 6/881,785, entitled "System and Method for Forming Substrate LEDs", filed on January 22, 2007 by the inventor Du. 35 usc. Priority under 119(e). Each of the above-referenced applications is hereby incorporated by reference in its entirety. [Prior Art] Light-emitting diodes ("LEDs") are ubiquitous in electronic devices. It is used in digital displays, lighting systems, computers and televisions, cellular 141220.doc 201007993 and various other components. The development of led technology has led to methods and systems for generating white light using one or more LEDs. The development of LED technology has led to LEDs that generate more photons and thus more light than before. Rather than replacing the vacuum tube in a computer, the culmination of these two technologies is to complement or replace many known sources of illumination, such as incandescent, fluorescent or halogen bulbs. LEDs are produced in several colors including red, green, and blue. One method of producing white light involves the use of red, green, and blue LEDs in combination with one another. A source of illumination made from a combination of red, green, and blue (Rgb) LEDs will produce light that is perceived by the human eye as white light. This occurs because the human eye has three types of color receptors, each of which is more sensitive to blue, green or red. A second method of producing white light from an LED source is to establish light from a monochromatic (e.g., blue), short wavelength LED and to strike a portion of the light onto a photo or similar photon conversion material. Phosphors absorb higher energy, short wavelength light waves' and re-emit lower energy, longer wavelength light. For example, if a phosphor that emits light in the yellow zone (between green and red) is selected, the human eye perceives the light as white light. This occurs because yellow light stimulates both red and green receptors in the eye. Other materials such as nanoparticle or other similar photoluminescent materials can be used to produce white light in much the same way. White light can also be produced using an ultraviolet (UV) LED and three separate RGB phosphors. White light can also be generated from a blue LED and a yellow LED and can also be produced using a combination of blue, green, yellow and red LEDs. 141220.doc 201007993 The current industry practice for constructing LEDs uses a substrate (usually monocrystalline sapphire or carbonized) onto which a layer of material such as GaN or InGaN is deposited. One or more layers (e.g., GaN or InGaN) may allow for photon generation and current conduction. Typically, a first gallium nitride (GaN) layer is applied to the surface of the substrate to form a "transition region' from the crystalline germanium structure of the substrate to the crystal structure of the doped layer to allow photon generation or current conduction. . This is usually followed by an 'N-doped GaN layer. The next layer can be a layer of InGaN, AlGaN, AlInGaN or another compound semiconductor material that is photon and is doped with the necessary material to produce light of the desired wavelength. The next layer is typically a doped GaN layer. This structure is further modified by etching and deposition to establish a metal portion for electrical connection to the component. During operation of an LED, such as in a conventional diode, additional electrons move from an N-type semiconductor to an electron hole in a p-type semiconductor. In an LED, a photonic system is released within the compound semiconductor layer to produce light during this process. • In a plastic process, the substrate is fabricated in wafer form and the layers are applied to one surface of the wafer. Once the layers are patterned and the various procedures mentioned have been used to define all the features, they are separated from the wafer '(4)(4). The LEDs are typically square or rectangular with straight sides. Λ can cause significant loss of efficiency and can cause the emitted light to have a poorer emission pattern. Separating a knife, such as a plastic dome, is often placed over the LED to achieve a more desirable output. SUMMARY OF THE INVENTION This disclosure is directed to shaping optical elements to increase wire drawing. In particular, 141220.doc. 201007993, the optical element is comprising, after forming, using total internal reflection to direct more light to the exit surface of the optical element while preventing or minimizing total internal reflection on the exit surface. Side wall. Moreover, the optical component can include an exit surface having a sufficient area for conserving radiation. Various methods can be used to form a substrate material within manufacturing tolerances. According to a specific embodiment, a method can include providing a desired substrate shape corresponding to one of the optical elements having a substrate comprising an exit face, an interface, and a sidewall. The substrate of the optical component can be shaped to increase light extraction. For example, the exit face of the substrate portion of the optical component can have at least 70% of the minimum area necessary to conserve the radiation for a desired half angle of light projected from the optical component. Furthermore, the optical element can have a interface and the exit surface. Furthermore, the collection of sidewalls of the shaped substrate portion of the optical component can be positioned and shaped to cause at least a majority of the light having a transmission path from the interface to the sidewall to be less than or equal to a critical one on the exit surface. An angle of incidence of the corner on the exit surface is reflected to the exit surface. Based on the desired shape of the optical component, a fabrication method can be applied to the substrate material to shape the substrate material. Various techniques can be used to shape the optical component, including but not limited to cutting, grinding, ultrasonic machining, ultrasonic cutting, etching, water stripping, laser ablation, particle jet ablation, and other techniques. The disclosure and its various features and advantageous details are explained more fully hereinafter with reference to the exemplary embodiments illustrated in the accompanying drawings. The description of known starting materials and procedures can be omitted to avoid obscuring the disclosure unnecessarily in detail. It should be understood, however, that the description of the particular embodiments of the invention may It will be apparent to those skilled in the art from this disclosure that various alternatives, modifications, additions and/or re-configurations within the spirit and/or scope of the basic inventive concept. 'The terms 'including', 'including', 'having' or any of the variations used herein are intended to cover non-exclusive inclusions. For example, a program, product, article, or device that includes a list of components is not necessarily limited to such components and may include other components not specifically recited or inherent to the program, product, article, or device. In addition, unless expressly stated to the contrary, "or" is meant to be inclusive or not exclusive. For example, the condition Α or β is satisfied by either: A is correct (or exists) and b is erroneous (or non-existent), A is erroneous (or non-existent) and 6 is correct ( Or exists), and both A and B are correct (or exist). In addition, any examples or descriptions given herein are not intended to be in any way limiting, limiting, or clearly defining the term or terms used in the examples or description. Instead, such examples or descriptions are to be considered as illustrative and not restrictive. It should be understood by those skilled in the art that any term or terms used in such examples or descriptions include other specific embodiments and embodiments and adaptations that may or may not be provided therewith or elsewhere. Furthermore, all such specific embodiments are intended to be included within the scope of the term or a plurality of terms, and the language in which such non-limiting examples and descriptions are included, including but not limited to: ", in a particular embodiment" And similar languages. 14J220.doc 201007993 Reference is now made in detail to the exemplary embodiments of the disclosure, Wherever practicable, the same numbers are used throughout the drawings to refer to the same and corresponding parts (parts) of the various figures. The specific embodiments described herein provide a system and a square within an acceptable tolerance of the shape of the desired substrate of the shaped light: ? = an example of an LED 'but the specific embodiment can be applied to other uses of the substrate to guide or collect light Optical element. Further, although sapphire is used as a prime example of a substrate, other substrate materials may be used including, but not limited to, tantalum carbide, glass, diamond, or another substrate material known or developed in the art. The desired substrate shape can be defined as discussed below to establish a LEE having desired optical characteristics. Although the desired shape can be based on a particular desired LED shape, the desired shape of the forming method can address additional changes or trimming during subsequent grinding stages. The forming method is capable of forming a substrate material within an acceptable tolerance of the desired shape. In a specific embodiment, the acceptable tolerance can be between plus or minus 20 〇 / of the desired shape. Within and even more specifically within 1% of the desired shape. In other embodiments, the forming method employed shapes the substrate material within 5 microns and even more specifically within 1 inch of the desired shape. In some cases, the forming process can also establish sidewalls that are ground to a desired smoothness. In other cases, a separate grinding process can be used to grind the substrate material. Thus 'although the desired shape upon which the shaping is based may have, for example, been positioned and shaped to reflect a certain amount of light to the sidewall of the exit face', but the resulting shaped substrate may not be in the absence of additional steps such as grinding. Reach this reflection. 141220.doc 201007993 Figures 1 through 8B and accompanying discussion illustrate various specific embodiments of optical components having shaped substrates. Once the desired substrate shape is determined, the forming method can shape the substrate accordingly. A particular embodiment of a shaped substrate LED can be shaped to increase or shape the light emission from the LED. According to a specific embodiment, the substrate is shaped such that all or a majority of the light generated by the quantum well region of the LED is transmitted out of the exit face of the substrate of the L E D . For this purpose, the exit surface can be customized to take into account the principle of conservation of radiation. In a specific embodiment, the exit surface may allow an interface between the quantum well region and the substrate (ie, an interface to a non-substrate layer) to be received in a light-emitting region of the optical component. Light) the minimum amount of light entering the substrate, or the majority of the light exiting the exit face, thus combining the desire to preserve the conservation of radiation and reduce the size (especially the size of the exit face). Additionally, the sidewalls of the substrate can be shaped such that reflection or total internal reflection ("TIR") causes a beam of light incident on the sidewall of the substrate to be reflected toward the exit face and incident at an angle less than or equal to the critical angle The exit surface. Therefore, the light loss due to the TIR on the exit surface is reduced or eliminated. In another embodiment, in order to ensure that the light striking a sidewall is reflected in the substrate and does not pass through the sidewall, one side wall or sidewalls of a substrate may also be coated with a reflective material. The material reflects light to prevent light from exiting through the sidewall. Although the spread equation shows that 100 〇/〇 of light transmitted from the quantum well region of the LED to the substrate of the LED can exit the substrate through the exit surface, but various embodiments may enable a smaller amount of light. From the exit surface, 141220.doc 201007993 shots while still providing significant improvements over previous LED light emissions. For example, a cone half angle of 10 to 60 degrees can be used with an efficiency of approximately 79% (the Fresnel of the tantalum carbide substrate material having a refractive index of 2.73 (there is approximately 21% efficiency loss due to (3) printing loss) using the desired intensity profile , the exit rate profile or another light output profile emitted from the exit surface from the exit surface of the LED 0. When the light traverses from a medium of a lower refractive index to a medium of lower refractive index, Fresnel loss ( For example, the loss between the interface between two media (for example, the loss of an LED and air or the exit surface of another medium) occurs. The normal incident Fresnel loss is explained by the following equation: (N1-N2) 2) / ((N, + N2) 2) > where N! and N2 are the refractive indices of the two media. As an example, for an LED with a tantalum carbide substrate, Νι=2·73 (approximate l〇R of tantalum carbide), N2 1 (approximate IOR of the gas), resulting in nearly 2丨5% of Fresnel loss. If the LED utilizes GaN in the quantum well region, the Fresnel loss at the interface between the quantum well region (^ = 2.49) and the tantalum carbide substrate (乂 = 2 73) will be 0%. The Fresnel loss at the exit face to the air interface can be reduced or overcome with an anti-reflective coating. Small to make the radiation blame. Along the optical path of one of the media, the following spread equation can be added to [Equation 1] to select the exit surface of an LED substrate in a single medium or from one medium to another. The brightness theorem is controlled by the expressed law of conservation of radiation: Spread equation: -φι = ^ι^ιΩ, ν[α^Ω~2 141220.doc 201007993 Φΐ = luminous flux of zone 1 (lumen)

N1 = IOR of the medium of zone 1

Area of the entrance from Af to Zone 1 Ω! = solid angle of the light completely containing Zone 1 (stereo radians) Φ2 = Luminous flux of Zone 2 (lumen)

' Ν 2 = IOR of the medium of zone 2 • 8 2 = area of the entrance to zone 2 Ω2 = solid angle of light containing zone 2 · (stereo arc) The area of the exit face of a shaped substrate can be selected to meet a desired The half angle preserves the radiation of light entering the substrate from the quantum well. Therefore, it is possible to emit light with high efficiency at a half angle. This is unlike conventional LEDs, which use both half angles that are undesirable for many applications to emit light, so additional optical components are needed to shape the light; and a significant percentage of the light is emitted through the sidewalls because the exit surface is not Large enough to conserve radiation; it also suffers from absorption losses due to light that never escapes from the substrate. Lu also's control of the transmission of light from a medium of refractive index to a medium of a different IOR by Snell's Law. Syner's Law defines the relationship between the angle of approach of the light measured from the normal to the interface surface and the angle of departure from the light of the interface, which is a function of the refractive indices of the two media. Snell's law: % = ΛΓ2 sin(©2) [Equation 2]

@ 1 = incident angle of light close to the surface of the interface. IOR 6 of the medium 1 > 2 = angle of incidence of light away from the interface surface 141220.doc 201007993

N2 = I 〇 R of the medium 2 In the case of light transmission from a medium of a higher IOR to a medium of a lower IOR, 'a ray can strike the interface surface between the mediums and still pass the maximum of the interface The horn is called the critical angle. Basically, if the light from the medium of the higher IOR is intended to pass through the interface and pass to the medium of lower I 〇 R, then the light must approach the media interface at an angle not exceeding the critical angle. For example, in a Led comprising a substrate and a quantum well region, the substrate dielectric and quantum well media can form a interface that is traversed by light generated by the quantum well region. Light that is closer at an angle greater than the critical angle will be reflected back at the interface between the media in the medium of higher I 〇 R and will not be passed to the medium of lower IOR. This is called total internal reflection ("TIR"). In a typical GaN LED, the quantum well region has an IOR that is approximately 厶. When such layers are constructed on a sapphire substrate having 〇.77 I 〇 R, the light transmitted into the sapphire is inherently limited by the application of the Snell's law and the brightness theorem. For an LED using a substrate that can have a tantalum carbide of approximately 2 73, the quantum well region has a lower I 〇 R than the tantalum carbide (eg, approximately 2.49), and thus the Snell's law does not prohibit the generation. Any part of the light is transferred to the tantalum carbide. In conventional LEDs, a significant portion of the light that encounters the substrate to air interface will be intercepted in the substrate due to TIR. In some cases, a separate optical component (e.g., a solid plastic dome or lens) is used to increase the transfer of light from the substrate to the medium in #, thereby reducing TIR in the substrate. These separate optical components may still suffer from losses due to TIR, and the dome picking efficiency remains relatively low. In addition, the use of a dome 14I220.doc 201007993

Additional steps in the fabrication after the formation of the LED are required. In another aspect, a particular embodiment of a shaped substrate LED can be shaped to minimize or eliminate light loss due to TIR on the exit surface of the substrate. According to a specific embodiment, the exit face of the substrate can be spaced from the interface of the quantum well region such that no light having a direct transmission path to the exit face experiences TIR on the exit face. Additionally, the sidewalls can be shaped to reflect light incident on the sidewalls to the exit surface using an angle of incidence that is no greater than the critical angle on the exit surface, thereby allowing all internally reflected light to also be from the LED substrate. The exit surface is emitted. 1A is a schematic representation of one embodiment of an LED 20 including a substrate 1 and a quantum well region ι5 (which may include one or more doped layers or regions). The lining well £15 includes an illuminating region 25, typically a compound semiconductor such as inGaN or AlInGaP or GaN, or another quantum well composition ❶ from the photon permeable interface 5 of the quantum well region 15 into the substrate 1〇. The led 20 can be a one-wire bond, flip chip or another LED known or developed in the art. In Fig. 1A, both the substrate 10 and the quantum well region 15 form side walls 6, side walls 65 or other side walls. In other words, the quantum well regions 15 are formed in conformity with the substrate 1〇. In other embodiments, the quantum well region i 5 may be unformed and, conversely, have straight sidewalls. The LED 20 further includes an exit surface 55 that is substantially identical in shape, substantially parallel, and substantially rotationally aligned with the interface 50 within the tolerances of the process. The area of the exit surface 55 can be selected to maintain the brightness for a desired half angle according to the radiation 'good (sometimes referred to as brightness conservation) equation: [Equation 1] Φ2ηΐΑλΟ.} Φ]/^Ω2 141220.doc -13· 201007993 Φι=the luminous flux across the interface 50; Φ2=the luminous flux emitted from the exit surface 55, based on the conservation of brightness, so—Φ]=Φ2; Ω]=effective solid angle, thus the light crosses the interface 5〇; 〇2=effective stereo An angle, thus the light leaves the exit surface 55; Α! = = the area of the interface 50; 八 2 = the area of the exit surface 55; ηι = the refractive index of the material of the substrate 1 ; 2 - the substance outside the substrate 10 (such as air or Another medium) refraction _ rate. Α2 represents the minimum surface area of the exit surface 55 such that the light system forms a 1 mm square according to the above equations, for example, the pseudo-quantum well region 15 such that the interface 50 has a region of approximately 1 mm square, hl, Ω 丨 = 3, 〇 2 = 1 ' then As must be at least 9 3987 mm 2 to keep the radiation conserved (ie the minimum size of the exit face 55 such that all of the light traversing the interface 5 能 can be directed to a desired half angle from the exit face 55 emission). Although the effective solid angle is given in this example, the method of determining Ω4 Ω2 for a desired half angle is discussed below in conjunction with Fig. 6 to the anvil. It should be noted that the square profile has a rectangular profile with sides of equal length. - Α 2 according to Equation 1 is the minimum feasible size for a given wheel-out cone angle or emission half-angle for the conservation of radiation. Therefore, in order to keep the radiation conserved, Α2 should be at least the size determined by Equation 1, but it can be larger. For example, 八 2 can be made slightly larger to compensate for tolerances in the process, errors in the size or shape of the quantum well region η, or other factors. 141220.doc -14- 201007993 In which A2 is greater than by equation! In the case of a determined value, the flux will be conserved, but the rate of emergence (defined as flux per unit area) can be reduced from the maximum available value. However, in order to reduce the area of the exit surface, it may be desirable to make 八2 as small as possible. For example, VIII can be within 5% of the minimum area necessary to conserve radiation. If a certain optical power (light flux) may have been sacrificed, then A2 can be less than the size specified by the light shot. As an example for having 1

A specific embodiment of the mmxi mm square interface 50, the exit face" can be from 2.5 mm2 to 5 mm2 (eg, 4.62 mm2). As another example, for one embodiment having a 0.3 mm x 〇.3 mm interface 50, The exit face can be from 0.2 mm2 to 0.5 mm2 (eg, 〇42_2). However, it should be noted that the size ranges provided in the previous examples are provided by way of example only, and that various embodiments can have less than or greater than the example range. Various sizes. However, in the specific embodiment, the system is at least 70% of the value determined by the equation. Further, the shape of the exit surface 55 may be different from the shape of the interface 50. The interface 50 and the substrate 10 The distance between the exit surfaces 55 (which is referred to herein as "height", although the distance may extend in a direction other than the vertical direction) may be selected to reduce or minimize the self-interface 5 〇 direct travel to The light iTIR of the exit surface 55. TIR occurs when the light system is incident on the surface at an angle greater than the critical angle defined by the equation below.

[Equation 2] Air or another substance n1sin(ec)=n2sin(90) wherein the IOR of the nf substrate 10; η, the IOR of the medium outside the exit surface of the substrate 10 (for example, 141220.doc -15-201007993); And ec = critical angle. For example, 'and n2=1, then 0c=34.4 degrees. Thus, the temperature of the substrate 10 can be selected to limit the critical angle of light incident on the exit surface 55 to a range between perpendicular to the exit surface 55 and less than or equal to the critical angle. Referring to Figures 2 and 3', Figure 2 is a representative representation of a set of light rays traveling from a point 57 incident on surface 55 (represented by surfaces 65a, 55b, and 55c from different distances from point 57). In the example of surface 55a, some of the light (e.g., light ray 56) is incident on surface 55a at an angle greater than the critical angle, thereby causing loss of light due to TIR. Conversely, in the example of surface 55b, certain rays (e.g., rays 57) incident on surface 55b at or near the critical angle will be incident on the sidewalls in the opposite direction. Preventing such light loss can increase the complexity of the sidewall design, if desired. In addition, the extra height requires more space to accommodate the LED (ie, because the LED is higher). Finally, in the case of the surface 55c, the light rays at or near the boundary angle are incident on the surface 55c, and the light rays at the angle larger than the critical angle on the exit surface 55c are incident on the side walls. TIR or reflection can be used to direct light incident on the sidewalls to the exit surface 55c, as discussed below. According to a specific embodiment, the limiting ray for selecting the height travels the longest straight line distance from the interface 50 to the exit surface 55 and is incident on the exit surface 55 at the critical angle. There may be more than one light that can be selected to be the limited light. In a square or rectangular configuration, this enters the substrate 10 at the corners of the interface 141220.doc •16·201007993 50 and travels in a straight line to the opposite corners of the exit surface 55 such that the light will be The critical angle is incident on the exit surface 55. Figure 3 provides a schematic representation of a top view of one of the substrate defects and one of the limiting rays for a square configuration. Although in one embodiment the height of the substrate 1 经 is selected to limit the critical angle of the light incident on the exit surface 55 to a range between perpendicular to the exit surface 55 and less than or equal to the critical angle, Choose other heights, although other heights may reduce the efficiency of led2〇. In a specific embodiment, the distance between the interface between the other layer and the substrate and the exit surface of the substrate may be within a minimum height that has a straight line from the interface to the exit surface. All rays of the transmission path have an angle of incidence on the exit face that is less than or equal to the critical angle. Returning to FIG. 1A, the side walls of the substrate 10 (eg, side walls 6 〇, side walls 65) are selected using the size and shape of the interface 5 、, the size and shape of the exit surface, and the selected boundary conditions between the interface 50 and the exit surface 55. And other sidewalls can be shaped to direct light incident on the inside of the sidewalls to the exit face Μ to produce a desired light output profile (eg, an intensity profile, an exit profile, or another light output profile). For most applications, it is desirable that the intensity profile be uniform or nearly uniform, but other profiles can be achieved by varying the height and shape of the sidewalls. Broadly speaking, the shape of the sidewall is determined such that it is incident on a sidewall. A light ray is reflected to the exit surface 55 and is incident on the exit surface 55 at the critical angle or a smaller angle (ie, such that there is no phase due to the internal inverse 141220.doc • 17· 201007993 on the exit surface 55 This is shown by the light 7〇 in the image, the light has an angle of incidence 75 with respect to the side wall 65, which is greater than 1 so that the light 7 is reflected to the exit surface 55 and has An angle of incidence less than or equal to qc, although in one embodiment, the sidewalls are shaped such that all of the light rays encountering the inner surface of the sidewalls experience total internal reflection to the exit surface 55 and are at the critical angle or The smaller angle is incident on the exit surface 5 5, but other sidewall shapes that allow for some loss can be used. Returning to Figure 1B, Figure 1B is a schematic representation of another embodiment of an LED 20. The LED 20 includes a substrate 1 And a quantum well region 15. The quantum well region 15 includes a light-emitting region 25 of a compound semiconductor such as inGaN or AlInGaP or AlGaN. The photon permeable through the interface 5 from the quantum well region 15 enters the substrate 10. This may exist in Figure 1B. More loss due to TIR in the quantum well region' because the quantum well region is not shaped to properly direct light to interface 50 and/or exit surface 55. Although in the specific embodiment of Figures 1A and 1B Some of the sidewall shapes may not direct all of the light generated by the LED 20 to the outside of the exit surface 55, but portions of the light that are not emitted from the exit surface 55 will be emitted from the sidewall 65 and may be emitted near the exit surface 55, thus allowing for borrowing The light generated by the LED 20 is usefully captured. Figure 4A is a schematic representation of a section of an LED used to determine the shape of the sidewall or a section of a substrate of an LED. Computer aided design can be used to determine the shape of the sidewall. A model of the sidewall is established in a computer-aided design package and simulation run to determine a suitable sidewall shape. According to one embodiment, each sidewall can be divided into n facets, each of which is a planar section For example, the side wall 1 is made up of fifteen flat 141220.doc -18- 201007993 facets 1〇2a to 1020 instead of a continuous curve. The variables of each facet can be adjusted repeatedly and analyzed. The profile is distributed until a - satisfactory profile is reached, as explained below. Although fifteen facets are used, each side wall can be divided into any number of facets, including twenty or more facets. In another embodiment, the sidewall can be divided into three facets as explained below. Each facet can be analyzed relative to a subset of the reflection-light in the substrate. This area of interest can be defined as "corner-to-edge". It can be defined by the angle of the light radiated from a predefined point—the opposite side of the facet. The selected point can be the point at which the highest angle of incidence on the facet is used to give the ray, since such ray is the least likely to experience tir on that face. For example, a substrate having a square shaped interface region will be a point on the opposite edge of the interface. - depending on the specific embodiment, for _selection ~, A2 and height, it can be decided that if it is not previously reflected by the other side wall, it will be incident on a given side wall (10) such as (4) 1GG). The biggest light (four). In this example, the ray 11G emitted from the point 115 is set for the maximum angular center of the side wall if the maximum angle is 95 degrees and 48 degrees and there are 15 facets for the side wall (10), then each facet (assuming a pair of angles) The edge of the hook distribution will correspond to the 3.2 degree band of the angle (for example, the first facet will be incident on the area where the angle of incidence from 〇 to 3 degrees is used to emit light from point 115. The second facet will be The upper incidence is an area of light that is emitted at an angle 95 of 3.2 to 6.4 degrees at point 115, etc.). For each-small face, U-angle, facet size, tilt angle or another parameter of the facet can be set so that all light rays hitting the face are subjected to 141220.doc -19· 201007993 TIR and reflected to The exit surface 55 is incident on the exit surface 55 such that it adopts an angle of incidence less than or equal to the critical angle. The side walls can also be shaped such that a light viewed in the cross-section only hits one side of the wall. However, there may be additional reflection from a side wall other than the plane of the section. For a full 3D analysis, light striking one of the first side walls near the corner can thus bounce to a second side wall adjacent the first side wall and bounce from the second side wall to the (four) side. A curve fit or another-value analysis can be performed to create a curved sidewall shape that best fits the desired facet. For example, in Figure 4A, the side walls 105 are curved rather than one of the planar facets. To optimize the number of turns for each facet, a simulated price detector plane 120 can be created. The detector plane 12 can include a number of detectors to independently record the incident power. Simulation of light through the substrate can be performed and the intensity and irradiance distribution as received by the detector plane 12A can be analyzed. If the intensity and irradiance distribution are not satisfactory for a particular application, the corners and corners of the facets can be adjusted to create a new curved surface and re-implement simulation until a satisfactory strength profile, exit profile is achieved Or another-light output wheel IP. The additional (four) plane can be analyzed to ensure that both the near field and far field patterns are satisfactory. Alternatively, the facet can be performed using a facet instead of a curved surface and the surface curve is determined after the desired light output profile is reached. In another embodiment, the sidewalls are capable of maintaining a small face shape and do not create a curve. According to another embodiment, the sidewall shape can be selected based on a plurality of parabolas, wherein each-plane facet represents a linearity of the parabolic-partial portion. For example, Figure 4B is a schematic representation of a portion 4 of an LED. In FIG. I41220.doc 201007993 4B, a hypothetical ray 410 is described that radiates from a focal point 412 of a parabola 415 and intersects the sidewall 420 such that it is reflected from the sidewall 42 due to TIR and traverses the substrate to adopt less than The exit angle 44 of the critical angle intersects the exit surface 430 and exits the substrate into the air or another medium. As can be seen from Figure 4B, in the transition from the substrate to the air, the light rays 41 are curved, as illustrated by the Snell's law. Since the tangent to the side wall is determined from a parabola and because the light incident on the side wall and reflected from it is in the same medium, the light will be parallel to the optical axis of the parabola. Therefore, a half angle 450 is used to project light. The opposite sides of the shape defining the sidewall 420 can be adjusted such that the hypothetical ray 410 is reflected from the sidewall 420 such that the ray 410 traverses the exit pupil 430 with a desired exit angle 440 or a desired half angle 450 to project light. In a specific embodiment, when making a sidewall or calculating the opposite side of a sidewall, a finer opposite edge can be used toward the base of the sidewall (ie, closer to the quantum well region) because it is reflected near the substrate The effect of the opposite side is then greater or sharper' and thus the finer opposite sides allow a side wall with better TIR properties to be further from the substrate 'where the effect of the opposite sides is smaller' The edges can be rough. Thus, the facets of a side wall can be numerically larger toward the base of a shaped substrate LED. In one embodiment, a side wall can have 20 or more facets, with finer facets at the base of the side wall where the facets are close to one or more opposite sides. A facet can be a linear approximation of a portion 4丨7 of a parabola 41 5 . The parameters of parabola 415 can be adjusted until portion 417 reaches all of the rays incident on portion 417 and reflected to exit face 430 such that the rays have a desired target that is less than the exit angle 440 of the critical angle of 141220.doc -21 - 201007993. Each facet can be formed from a parabola with different parameters. Thus, a facet for a corner-to-edge can be based on a parabola rather than an adjacent facet. For example, a 2-sided facet can be based on 20 different parabolas. Figure 4C illustrates the use of a computer program such as Microsoft Excel to define a representative representation of a facet for a side wall (Micr〇s〇ft& Excel is a trademark of Microsoft Corporation based in Redmond, Washington)^ at Micr The drawing feature in 〇s〇ft Excel can be used to create a pattern of one of the sidewall shapes, which is shown at 125. The same general shape can be used for each side wall or a different shape for different side walls. A shaped substrate having a enamel sidewall shape (or having a curved sidewall shape based on a designated facet) can be analyzed, for example, in a Zemax optical design program (Zemax is a trademark of Zernax Development Corporation, Bellevue, WA). Computer simulations can be performed in Zemax to produce a ray trace and a contour of intensity and irradiance distribution. If the resulting intensity and irradiance illuminance profile has an unsatisfactory distribution or the transmission efficiency of the shaped substrate is too low, the various facet variables can be adjusted and the simulations performed again. This program can be automated by using a computer program to automatically adjust the facet variables. More specifically, FIG. 4C illustrates a trial spreadsheet 500 that can be used to design a sidewall shape as shown in graph 51 0 by angularly edged specifications. The projected half-angle row 550 contains a plurality of corners corresponding to the projected half-angle 450 of Figure 4B. The exit angle lines 540a (in radians) and 540b (in degrees) contain a plurality of exit angles corresponding to the exit angles 440 of Figure 4B. More specifically, all or a subset of the angles in row 54A may be less than the angle of the critical angle such that the light intersecting the exit surface at 141220.doc -22-201007993 traverses the exit The surface is thus emitted from the substrate. Rows 540a and 540b can be used to expand the parabolic focus line 56〇, which contains a plurality of focal points defining different parabolas. The diagonally opposite row 565 has a plurality of angles (in radians) that define a corner-to-edge limit that can be used in conjunction with the parabolic focus line 560 to define the shape of a sidewall such that a light from the quantum well region The sidewall reflections are emitted from the exit face at an angle less than the critical angle. Using the number _ value contained in the parabolic focus line 560 and the edge-to-edge line 565, the e-line 57 〇 and the radius line 575 can be expanded, wherein the corresponding values in the rows 570 and 575 correspond to the desired parabola on one of the opposite sides. Point. In turn, limp 570 and radius row 575 can be used to develop a cartesian coordinate for a point on a side wall (e.g., coordinate transformation line 577) that is adjacent to the parabola for the opposite sides. For example, a user can specify the LED size (i.e., the area of the interface between the substrate and the quantum well region) and the refractive index of the material. Using an example of an LED having a size of i and a refractive index of 1.77, one of the columns of the screen 5 can be completed as follows. The user can specify an exit angle in the air in row 550 (assuming air is the medium in which the LED will operate). In the example of the first column, the user has selected 55.3792 degrees. The exit angle in the substrate can be calculated as -3ίη(55.3792/18〇*π)/1·77 or 0.4649323 radians, line 540a. Line - 540b can be calculated as sin(0.4649323)/Tt*180=27.2058407. The focus of the parabola can be calculated as i (size)/2*(1 + e〇s〇x/2_ 27·2058407/180*π)) 0.732466. The edge-to-edge row 565 can be calculated as (9〇· 27.7058047)/20=3.114708 based on the number in the next row (representing the relative size of a particular facet). You can use the selected number of one of the facets (20 in the 141220.doc -23- 201007993 example) to calculate the line 570. For example, in the first column, the tether is calculated as (90-27.7058407) + 3, 114708 * 20 = 124.5883. The radius of the parabola for the first facet (line 575) can be calculated as 2*0.732466/(1+cos(124.5883/180*t〇). The content of the coordinate transformation line 577 can be calculated for the first column as follows: x=-3.3885*cos(124.5883/180*7t)= 1.923573 ; y=-3.3885*sin(124.5883/180*7C)=2.789594 , X=1.923 573*cos(27.7058407/180*;c)+2.789594*sin (27.705 8 407/180*π) ; Y=2.789594*cos(27.7058407/180*T〇-1.923573*sin (27·7058407/180*π)-1(size)/2=1.075452 and Υ,=-Υ The χ, γ coordinates can thus be used as data point inputs for shape fitting maps in Excel. For example, the graph 510 is based on data points in the X and γ rows (the Y row values are used in the graph 510) The x-axis coordinates and the numerical values are used as the y-axis coordinates. In addition to the X and Y values, a starting value (for example, 5 and 〇) can be set. The shape of the graph 510 can be input to an optical design package. And the simulation run. If a simulation is unsatisfactory, the user can adjust the value in the spreadsheet 500 until a satisfactory contour is reached. The satisfactory "transmission efficiency and irradiance and intensity profile can produce LEDs with a substrate with specified parameters. An example of this LED is shown in Figure 4D, which provides a specific LED with a substrate. The schematic representation of an embodiment has a substrate having sidewalls shaped to cause TIR such that light is reflected from the sidewalls to the exit surface. In this embodiment, the shape of each sidewall is such as by various The overlap of multiple contour surfaces defined by the facets. Although =. For the convenience of manufacturability - curve fitting, but = 141220.doc -24- 201007993 The example can keep the small side walls. Although in Figure 4D The area of the quantum well region is shown as a square or a rectangle, but this is by way of illustration and not limitation. For example, the shape of the region of the quantum well region can be any shape (for example, circular, rectangular, triangular). Similarly, the shape of the exit surface of the LED can be any of various shapes (for example, circular, rectangular, or triangular). Returning to FIGS. 1A and 1B, as described above with reference to FIGS. 8 and 1B, The substrate 10 determines various boundary conditions (specifically, the area of the exit surface of the substrate 1) to conserve the light. The minimum area of the exit surface 55 can be determined from the above equation, which depends on various effective solid angles. The effective solid angle of the light is determined based on an equation derived from an idealized source that radiates as a Lambertian emitter, but which is considered a point because the distance of interest is much larger than the source. The observed radiation intensity (flux/stereoarc) of a Lambertian emitter varies with the angle of the normal to the source by the cosine of the angle. This occurs because although the radiation (flux/stereoradian/m2) remains the same in all directions, the effective area of the emitter is reduced to zero as the viewing angle increases from normal to 90 degrees. This integration of efficiency over the entire hemisphere produces a projected solid angle value equal to the redundant solid curvature. Referring to Figure 5, it is assumed that a sphere 13 给出 giving a radius (R) surrounds the point source 132 (in this example, the point source 132 approaches a Lambertian source at a significant distance). The projection area of one of the spheres of the sphere is 兀2 and the projection area of the entire sphere is 2πβ_2. This model can be used to design a led because an interface between a quantum well region and a substrate can be modeled as a Lambertian emitter such that any 141220 on a hypothetical hemisphere from the center above the interface .doc •25· 201007993, a given point on the interface will have the same radiation. The area & can be calculated as a flat circular surface (e.g., surface 136) which is the radius of the circle 134 using the distance from the vertical ray to the intersection of the sphere surfaces by the solid angle of the beam of interest (1{_(; ) to the opposite direction. For the zero of the beam, give the half angle 137,11. The product of R (the radius of the sphere) and the cosine of the corner , so that

Rc=R*Sin(0) [Equation 3] The area is equal to: A3^Rc2=, (R*Sin(e))2 [Equation 4A] The area As is intersected with the sphere with the solid angle, the solid angle Projection area. The area As is divided by the projected area of the hemisphere (Ah=7iR2) and the quotient is multiplied by the projected solid angle of the entire hemisphere (equal to π) to obtain the projected solid angle Ω so that 〇=71*{desired solid angle Projection area} / (projected area of the hemisphere) Q = (^} * [{7i (R * Sin (0)) 2}} (7tR2)] = 7t * Sin2 (9) For example, for interface 50 of Figure 1, Θ system 90 degrees [Equation 4Β] [Equation 4C]

[Equation 5] thus results in a projected solid angle of 7:*Sin2(90)=K; and for a desired half angle of 30 degrees, the projected solid angle π*8ίη2(30)=π/4. Use these values for Equation 1 and Equation 1 to determine Α2 for any half angle. In the above example, the solid angle is derived using the equation derived from the Lambertian source of the point source. These equations do not consider the fact that light can enter a substrate from a quantum well region through a interface that can be square, rectangular, circular, oval or otherwise shaped. Although the method described above gives a good estimate of the solid angle of 141220.doc • 26-201007993, it can be adjusted later based on experience or computer simulation if necessary, but other methods of determining the effective solid angle can be used.

Figures 6A through 6E illustrate another method for determining an effective solid angle for a substrate of an LED. Figure 6A is a schematic representation of a specific embodiment of an interface 150 and an exit surface 155 of a shaped substrate 160 (shown in the image) and a hypothetical target plane 156 of projected light thereon. Figure 6A illustrates an example of a valid source origin 152, center normal 153, and one of the effective output origins 154. For the purposes of further discussion, it is assumed that the center of the interface 15〇 is at 〇, 〇, 0 in the Cartesian coordinate system. The target plane 丨 56 represents the parameters of the resulting pattern (e.g., the size and half angle used by another optical component). According to a specific embodiment, the half angle at the diagonal (shown as αΟ in the Fig. 6β is the starting point. For example, if the desired light on the target plane 156 has a maximum half angle of 30 degrees), it is used for square or rectangular small The % of the face substrate is 30 degrees. The half angle of the shaped substrate 16 (labeled I and also shown in Figure 6C) can therefore be determined according to the following equation: n2Sin(ai) = nlSin(Pl) [Eq.] η! is the IOR of the shaped substrate 160; η2 is the IOR of the material (usually air) from which the light is projected from the shaped substrate 16〇; the half angle of the exit surface in the medium (usually air) outside the substrate; Ιι is the desired half angle in the substrate. For example, if a half angle % is desired to be 30 degrees, and a 141220.doc • 27-201007993 having a 177 i〇r is projected into the air, βι = 1641 degrees A similar calculation can be performed for one light projected from a point on the long and short sides of the entrance face 150. For example, as shown in Figures 6B and 6C, the center of one edge on the self interface 150 can be directed to the exit. The opposite edge of the face ι55 A ray at the center determines h and β2. (The critical angle is the same in the case of 16 41, but β! is not the same as β2. β2 is determined by the geometry of the sides and the height of the shaped substrate. Using the calculated angle, you can determine the location of a valid point source. For a square interface 150 of length 1!, the effective point source will be positioned as χ=〇, _ Υ=0, and Ζ a 篆 'eps [Equation 7 Where Zeps is the distance from which the effective point originates from the entrance surface 15〇 of the forming substrate 16〇. According to the following equation, it is assumed that F〗 intersects one sphere of the uniform radius, and the source from the effective point is calculated to point F!& X, 丫 and 2 distances of F2: XFi=cos(y1)sin(P1) Υρι=8ίη(ψ,)8ΐη(β1) Zfi=cos(P!) Xp2 = 0 [Equation 8] [Equation 9] [Equation 10] [Equation 11]

[Equation 12] [Equation 13] YF2=cos(y2)*sin(Pi) Zf2 = C0S(Pj) where ^ is the angle of the diagonal ray in the 丫 plane (for squares) and where A ray projected from the middle parallel to the side of the x-axis as shown in Fig. 6C, Ψ 2 = 90 degrees. As shown in FIG. 6A, since 156 intersects the surface of the sphere at four 141220.doc • 28-201007993 points, and the size of the angle P2 is smaller than the critical angle h, the projection is based on the angle β. The value of point F2 is calculated on the plane of the side ray. A similar method based on previously calculated geometries can be used to determine other points (e.g., to determine the position of the points and the squares based on the position of the points and 匕 and the desired half angle of the light on the target plane 156). Figure 6D illustrates a diagonal ray and a ray that is projected onto a sphere 159 from the exit surface 155 and projected onto the short side of the sphere i6丨 for the target plane 156. For the exit face 155, the projection of the edge of the edge ray on the sphere 159 on the plane of the exit face 155 forms an elliptical segment. Similarly, the projection of the refracted ray at the edge of the target surface will intersect the sphere 161. For example, the image indicates a circular intersection (shown at 162) of the ray in the plane formed by the edge 163 of the target surface 156 intersecting the sphere 161 and the projection of the intersection onto the target plane 156 (shown on 164 places). The total projected area of the target face is found by calculating the area of each of the elliptical segments surrounding the square of the target face and adding the area to the area of the target face. Equation 4B can be used to determine the effective solid angle for the target plane. Similarly, the effective solid angle for the LED can be determined by using the sphere 159 and the elliptical segments formed by the light. For example, the total projected area is determined as explained above and inserted as the projected area of r desired solid angle in Equation 4B. As an illustrative example, the above method is used to use an LED having a square forming interface and an exit surface to project a light to produce an effective solid angle of 〇 立体 立体 狐By comparing 'using a conventional circular cast with a 30 degree half-angle projection specification, the 141220.doc -29-201007993 shot area will produce an effective solid angle of 0.785 solid curvature. When these values are then used in Equation 1 for the given I 〇 R and flux, the conventional (circular) juice is calculated to produce the desired exit area that is reduced by about 30% in size. If we want to use this method to design a system, then physics (ie, radiation conservation) will reduce the light output by 30% above the optimal design. Instead, an exit face area is calculated using the corrected effective solid angle described above, which will produce 42% more light output than can be achieved with a circular calculation. Although the above description determines a particular method for the effective solid angle of an LED, any method known or developed in the art can be used. Alternatively, the minimum surface area for conservation of light can be determined empirically. Furthermore, although the above minimum surface area calculation assumes that the light system enters the substrate across the entire surface of the interface between the non-substrate layer and the substrate, in a practical element, light may not evenly distribute across the surface. Enter the substrate over the entire surface. The calculation of the minimum area of the exit face can be modulated to account for the actual distribution of light across the interface, rather than being based entirely on the area of the interface. In a #body embodiment, the actual area of the interface through which the money is fed into the wire can be used as the Αι. The specific embodiment of the LED can project light to a desired cone angle of 1 to 6 degrees, and the efficiency is up to 89% (meaning that 89% of the light entering the substrate is emitted at a desired half angle, the Philippine ear loss system 11%), depending on the substrate material and Philippine loss. This efficiency can be 100% & Even in the case of only 7〇% efficiency, the specific embodiment of the LED provides greater efficiency than any other technology' while allowing the mean or near-sequence intensity distribution at the near and far fields. 141220.doc 201007993 The Fresnel loss from the substrate to the air (or another medium) interface can be overcome by applying an anti-reflective coating to the exit surface of the substrate. The antireflective coatings that can be used will be any coating known to those skilled in the art and including single layer or MgF multilayer coatings or other antireflective coatings. By using an anti-reflective coating, Fresnel losses can be reduced or eliminated, thereby increasing the light output efficiency of an LED. One embodiment of an LED can have more than one exit surface. For example, a shaped substrate may allow substantially all of the light generated by the LED to exit the LED, but pass through more than one single exit surface. Figure 7 is a schematic representation of an example of an LED 700 having more than one exit surface. In Fig. 7, 'the exit faces 71a and 710b of the LEDs 700 are displayed. An LED having more than one exit surface can emit light into a solid angle of more than half of the sphere. To maximize the light exiting the exit faces, the sidewalls of a substrate having more than one single exit face may have a plurality of curved or faceted surfaces. For a led having two or more exit faces, the led launch angle of the led can be greater than half of the sphere (and the projected solid angle can be greater than pi). An example of such an LED would be that if a single planar exit surface is replaced, the LED has a four-sided cone set of the exit surface, if the sidewall of the led substrate is shaped to direct light entering the substrate through the interface to four One of the exit faces is configured to strike the exit face at an angle no greater than the critical angle, and all of the light entering the substrate can be emitted from the LED through one of the four exit faces. Since the faces of the cones are not in a plane, but instead are angled to each other, any light striking the exit face at a critical angle of the exit face will be refracted to an exit angle of 90 degrees. The total solid angle space defined in this way will therefore be a function of the angular relationship of the four exit faces of H1220.doc •31- 201007993. To satisfy the spread equation, the four exit faces in this example would have to have a total surface area at least equal to the calculated value for the effective solid angle for the configuration. It is still possible to construct such a multi-ejecting surface structure, such as by making a light-fired blame. That is, by making the total projected surface area equal to the calculated value, and by designing the (four) wall to provide a uniform distribution of light to the material exit surface, the radiation can be made larger than the exit surface. If the value is required, the light entering the substrate can be emitted through the exit surfaces, and the luminous intensity is correspondingly reduced. Another embodiment of a shaped substrate having a plurality of exit faces is a specific embodiment in which the sidewalls of the shaped substrate are themselves exit faces. Depending on an entry point of a given ray, the ray may strike no more than the angle of the critical angle - giving the sidewall 'and through the sidewall, or it may strike at an angle greater than the critical angle and may internally reflect to the other side Or side walls. If the sidewall exit surface and sidewall are designed such that any light entering the substrate from any point on the interface passes through a sidewall exit surface, all of the light entering the substrate will exit the substrate. Shaped substrate LEDs having multiple exit faces may be suitable for general lighting applications where wide area emission is desired. Such LEDs can be used in conjunction with additional lens or reflector components that will direct light generated by the LEDs into a smaller solid angle. A potential benefit of having a plurality of exit faces or a shaped substrate on which the sidewalls are used to make the face is that the LED can have a smaller volume or can have a shape that is more easily fabricated, such as a flat rather than a curved surface. 141220.doc •32· 201007993 An LED array can be used to configure the LEDs... LED arrays can be used to produce the desired amount of light as well as the desired light pattern. For example, a square or another shape can be used to configure the LEDs. Using an array of LEDs to produce the desired amount of light may be more efficient or may consume less space than using a single LED. An array of LEDs can be formed during manufacture. For example, an LED array can be formed using the same wafer. In Fig. 8A, the 'LEDP train 800' includes LEDs 810a to 810c which are formed in the same crystal. Wafer material 82 is removed to form "Μ Φ to 810°. 1^〇81〇& remains attached to 1^1 at point 83〇& 81〇13. Similarly, LED 810b is at point 830b Maintaining attachment to the LED 81 〇ce, therefore, through the selective removal of the substrate material, an array of ^ 〇 can be formed. Figure 8 represents one method of forming an LED array and is illustrative and not limiting: Other methods for forming LED arrays known to those skilled in the art are within the scope of the present invention. One advantage of using LED arrays is that the shaped substrates of the plurality of coffee in the array can be used to have the same A single source of light output • Thin substrate. In addition, a smaller LED array can be more efficient than a single LED, ie consume a certain amount of input power. A smaller column can be compared to the same exit surface size and input power. A single large LED produces more light. One or more methods can be used to shape or form a substrate of an LED or a [ΕΕ) (or another photonic element). The method of forming a substrate as described below is exemplary. And contains a subset of many of the available methods. The methods described and other methods used in the LED or optical industry can be used to generate lED. The methods can be used on a variety of substrate materials including sapphire, tantalum carbide, glass or other substrate materials. 141220.doc -33- 201007993 Prior to a substrate material, a wafer or die for forming the substrate material can be prepared to provide one or more protective coatings or support layers. Generally, preparing a die for forming can include mounting the substrate to A support structure 'which can be used to hold various optical components together once formed, provide structural support during manufacturing and/or serve as a sacrificial layer that can be damaged during manufacturing. Can depend on any of the forming methods used The support structure is made of a suitable material. Examples of the support structure include glass, epoxy, sapphire, polyoxyn oxide or another material layer bonded to the substrate using epoxy or other viscous material. Examples of adhesives This includes, but is not limited to, Valtron AD4010-A/AD4015-B heat release epoxy manufactured by Valtech, Sanatoga, Pennsylvania. Liquor system (Μρ4〇ι〇Α/ 1〇15B_50), Li〇fol UR 9640 or another adhesive manufactured by Henkel Corporation of Rocky Hill, Connecticut. Adding a metal layer to the substrate material or supporting structure It can improve the adhesion strength. For example, a 1 micron thick coating of evaporating butyl can be applied to the substrate material or support structure to enhance adhesion. Other metal layers include, but are not limited to, titanium tungsten (Tiw) or another which can enhance adhesion. The material layer. The preparation may also include the addition of one or more layers of protective material to protect any metal or electrical layer from damage from abrasives, chemicals or tools. The protective layer can be selected such that the forming process can form the substrate material through the protective layer. According to a specific embodiment, the protective layer can be an elastic thermoplastic plastic that will adhere to the outermost layer of the wafer. The material of the protective layer can be selected based on the manufacturing method to be used, time constraints, and other factors. For example, a relatively adhesive protective layer may be suitable for wire sawing 141220.doc -34- 201007993, but may damage the ultrasonic forming tool. Examples of materials that can be used as the protective layer include (^〇〇1<;3〇1181&>^丨]<:3 93 bonding adhesives and other thermoplastic plastics. The thickness of the protective layer can depend on the The materials used in the protective layer and process parameters. In other embodiments, the wafer can be prepared in other ways or left unprepared. According to one embodiment, a wire saw can be used to cut the substrate material. 9 is a schematic representation of a particular embodiment of a wafer 900 for cutting LEDs. In this example, wafer 900 is mounted to mounting block 902, which can be cut in addition to wafer 900. Thus, wafer 900 is allowed to be completely cut. Thus, mounting block 902 can be used as a support structure and a sacrificial layer. According to one embodiment, mounting block 902 can be epoxy, wax or preferably low. Another material that is cost effective and stable under cutting. The adhesive layer 904 can be any suitable adhesive and, in certain embodiments, allows the shaped element to be cleanly cleaned from the mounting block after cutting or another process. Removed adhesive According to a specific embodiment, the adhesive can be, for example, a ring provided in a Valtron AD4010-A/AD4015-B heat release epoxy system (MP4010A/1015B-50) manufactured by Valtech, Inc. of Sanatoga, Pa. Epoxy resin epoxy resin. Although the substrate layer of the wafer 900 is displayed, the wafer 900 and the wafers described for other methods can also include a light emitting layer and an electrical layer. An abrasive cutting line 906 is used to adopt a desired shape. The wafer 900 is cut. By way of example and not limitation, an abrasive cut line 906 having a diameter of from about 155 microns to 250 microns with diamond particles of approximately 20 microns can be used. However, those skilled in the art will appreciate that various diameters can be used. Abrasive particles 141220.doc •35· 201007993, abrasive particle size or other features of the sidewall shape. Various grinding line cutting lines to achieve the operation, the grinding line 906 and the wafer _ can be along multiple axes Moving relative to each other. For example, it is possible to reduce the abrasion line 9〇6 in a straight vertical path while moving the wafer 9〇〇 horizontally. If the vertical velocity of the line 906 remains strange, the crystal can be continuously adjusted. The horizontal speed of the circle _ to achieve the desired shape. Or, the speed of the wafer _ can be kept constant for a short period of time to establish a plurality of flat facets on the side wall. In another implementation, the horizontal speed can remain ambiguous. , 'The vertical velocity of line 906 is simultaneously adjusted to create a curved facet or another sidewall shape. In another embodiment, the speed of both wire 9〇6 and wafer 9〇〇 can be adjusted. Although in the above-described embodiment, the relative movement of the line 906 and the wafer 9 is achieved by moving both the line 9〇6 and the wafer 900, other embodiments can include horizontally and vertically moving the line 9〇6 and / or wafer 9 〇〇 to establish the desired shape. When a set of channels 910 has been cut in one direction, the Ba circle 900 can be rotated to select degrees (90 degrees in the case of square or rectangular faces or other degrees of rotation for other shapes such as hexagonal leds) And repeat the cutting process until all sidewalls of the component made of the wafer are formed. The first line ore inherently produces a low contact force on the substrate and the cutting is done with a low quality wire. Some of the advantages of using a wire saw are: (1) the ability to programmatically produce the shape 'thus eliminating any fixed tool cost for a particular shape' and the associated lead time for obtaining the tool; (u) can respond to The shape is quickly modified by different design conditions; (iii) the stylized path can be changed to better match the shape of the design as the program conditions change; (iv) 141220.doc -36· 201007993 The wafer can be mounted ( If an epoxy adhesive is used to a sacrificial block, allowing the forming cut to be completely through the wafer in a single operation; (V) the wafer can then be completely ground on all sidewalls while still being original In the array. By this method, a shape having a curve with an undercut surface as viewed from the top can be produced. According to a specific embodiment, a wire cutting system can include a wire slicing machine and a motion control system that coordinates the cutting rate in the wafer and the lateral misalignment of the wafer or wire to enable a given shaping Cutting. Fig. 10 is a schematic representation of a specific example of a wire cutting machine 1 for cutting a formed substrate. It will be appreciated that the illustrated 2 cutting machine is provided by way of example and not limitation and any suitable wire cutting system can be used. According to a specific embodiment, the cutting machine can be a modified RTS 44® produced by Diamond Line Technology LLC of Colorado Springs, Colorado. The components of the cutting machine 1000 can be made of any suitable material. Corrosion resistant materials such as anodized aluminum are used in accordance with various embodiments. The cutting machine ι can include a cutting line of the winding line "only showing the path of the cutting line 1〇1〇", however, the cutting line 1〇10 can pass through the pulleys 1〇2〇, 1022, 1024 in either direction. 1026 runs from reel 1028 to reel 1〇3〇. Various pulleys can be adjusted to tighten the wire 1〇1〇. The cutting machine can produce line speeds of up to 3,000 inches per minute and has a capacity of 1 inch, although other speeds and abilities can be used. The cutting machine 1 can also include a cooling system 1038. Cooling system 1038 can use any suitable coolant. In the example of a basic cutting machine, the cooling system 1〇38 can generate up to 5 gpm of water-based coolant using a compressed air pump. Cutting line 1〇1〇, pulley 141220.doc -37- 201007993 1020, 1022, 1024, 1026 and reels 1028 and 1030 can be mounted to a 1040, in the vertical direction (for the purpose of this application along the z Axis) Translation. The translation is controlled by a stepper motor. Various pulleys can be mounted on one of the rocker mechanisms (not shown) that can be programmed to tilt the line. Although only a single cutting line is shown, the cutting machine can support multiple cutting lines. In a specific embodiment, the cutting machine 1 includes a platform 1〇5〇 that can be moved by a stepper motor along an axis (referred to as the X-axis for the purposes of this application). The movement can be controlled by an X-axis stepper motor having a desired resolution. In a specific embodiment, the stepper motor has an axis resolution of 〇〇〇〇5 inches and an accuracy of 〇.〇〇〇1 inch. Other embodiments may utilize a linear actuator, a brushless DC motor, or another mechanism to translate the wafer or cutting line relative to each other. Moreover, in other embodiments, the wire cutting machine can be configured to move the wire relative to the wafer along the X axis. Figure 11 is a schematic representation of one embodiment of a modified cutting machine 1 for cutting a workpiece 11〇5. The cutting machine 1000 can include one or more z-axis encoders 111 两个 (two are shown in Figure 11). The z-axis encoder allows accurate determination of the z-axis position of the yoke 1040. While encoders are used in this example, other systems can be used for position determination, such as ultrasonic sensors, infrared sensors, or other systems that can be used to provide accurate measurement of position. An example of an encoder is the 270 mm stroke RSF linear encoder from rsf Electronics, Gold Tailings, Connecticut, with an end-mounted extension of 1.1 micron resolution and part number BK71202AC016. Although not shown 'but a similar encoder or another encoder can be added to allow the position of the platform 1〇5〇 to be determined along the X axis. 141220.doc -38· 201007993 According to a specific embodiment, the wire cutting machine can include a camera, sensor or other component for determining the position of the cutting line relative to the wafer. In the example of Figure 11, cutting machine 1000 can include a camera system 1120 having a camera 1122 that is translatable along one or more axes. A camera mount 1123 can be coupled to an actuator or another mobile system 1124. The mobile system 112 4 can include a motor 112 6 for moving the camera mount 丨丨 23 through a drive shaft, link or another mechanism in accordance with an embodiment. An encoder (not shown) can be used to determine the y-axis position of the camera mount 1123. The mobile system 1124 can be liquid-tight in accordance with a specific embodiment to prevent damage to the mobile system 1124 by slurry, coolant, or other liquids in the cutting machine. Camera 1122 can include a tube 1128 to limit the field of view of camera 1124. Any number of lenses, filters or other optical components can be included in the tube 1128. A light source 1130 can provide illumination to the camera 1122. The light source 1130 can be mounted to the camera mount 1123 for movement with the camera 1122. In a specific embodiment, the camera 1122 is within 2 inches of the centerline of the cutting line 1 〇 1 。. However, camera 1122 can be placed in any suitable location that is closer to or farther from the centerline. According to a specific embodiment, the camera 1122 can provide an image with a resolution of 1 micron or better per image and provide an image size of at least 8 〇〇 x 6 像素 pixels. According to a specific embodiment, the motor 11 26 and the y-axis encoder can be included in an eight-in-one 8100 series (with 8) brushless servo motor manufactured by Aerotech Corporation of Forest Lake, Minnesota. 〇〇111111), its part number is ATS 100-100; camera 1122 can be Basler %, C- Mount 141220.doc -39- 201007993 1392x1040,18·7 fps, produced by Basler Company, Exton, Pennsylvania. Mono, CCD; tube 1128 can be Mitutoyo to C-Mount 152.5 mm extension tube; this lens can be Mitutoyo Telecentric Objective 10X Lens, light source 1130 can be from Advanced Illumination, Advanced Illumination, Rochester, Vermont, SL2420 Spotlight, Bright Field , Blu 470nm 24V-XL. The camera 1122 can be mounted to the camera mount 1123 using a Basler tripod mount for the A630 and A640 aluminum series cameras. The motor 1126 can be powered by the Aerotech Total Motion Controller (part number MP10 from Aerotech) and/or the Aerotech Total Motion Controller with I/O expansion board (part number MP10-IO). Camera system 1120 can allow the center of the field of view of the lens to travel at least 2 inches, with the flatness of motion within 5 microns being within two inches. A rotating stage 1150 can be coupled to the platform 1050 to allow the workpiece 1105 to rotate about the z-axis. According to a specific embodiment, the center of the rotating stage is within the positive or negative 5 mm of the platform 1050. According to various embodiments, the rotational stage 11 50 can have a repeatability of plus or minus 5 arc seconds. In one embodiment, the rotary stage 1150 provides a fluid-tight housing 1152 for a rotary motor (referred to as a θ-ζ motor) and a rotary encoder. The rotary motor rotates the turntable 1154. According to one embodiment, the rotary stage 11 50 can be a 5-inch rotary stage including an encoder manufactured by Newmark Systems, Inc. of Mission Viejo, Calif., with part number RMS-5-11. A tilt/tilt stage 1160 can be mounted to the turntable 1154. The tilt/tilt stage 11 60 can include a servo system and pivot for adjusting the angle of the work platform 1162 about two axes relative to the horizontal. Although only the servo system 1164, 141220.doc -40-201007993 is illustrated, the capping/tilting stage 1160 can include an additional servo system for adjusting the work platform 1162. A clip 1166 can be closed to hold the workpiece 丨1〇5 in place. In other embodiments, a vacuum, fastener, adhesive or other mechanism is used to hold the workpiece 1105 in place. As discussed above, the workpiece 1105 can include a wafer (hereinafter referred to as a rivet) that can be coupled to a sacrificial layer. During calibration, a human or robotic component can place the workpiece 11〇5 on the work platform 1162 and close the clip. The platform 1〇5〇, the rotating stage 1150, and the tilting/tilting stage 116〇 can be aligned to the wafer for cutting. According to a specific embodiment, this can be achieved using information from camera 1122. The wafer can include indicia or fiducials that can be temporarily stored by the camera 丨 122 by viewing a human user of the image from the camera 1122 or a program of image data processed from the camera. These fiducial markers can have any suitable configuration. By way of example and not limitation, the markers can be a crosshair having a line width of about 1 micron and a length of about 100 microns, or a wire having a specified length (e.g., a few millimeters). The mark can be placed close to the end of a particular channel cut by the line 1〇1〇. According to a specific embodiment, the platform 1〇5〇 moves along the \axis and the camera 1122 moves along the y-axis to bring the first fiducial mark into the field of view of the camera ι to align the fiducial mark in the camera (eg, By centering the mark, aligning the mark with the crosshair or by another method, the work platform 1162 can be adjusted to gather the f. The mark. The platform chest and the rotation (4) view are adjusted as needed to set a second reference The camera 1122 is aligned. The platform 1050 and the rotating stage 115〇 can be repeatedly adjusted until the entire stroke from the first reference to the first reference is completed without the need for rotational adjustment. In addition, the tilt level 1160 to align two tilting/planing rudders. Alignment can be achieved with the help of an operator and/or image processing program. With properly aligned wafers, the number of shirts can be moved. And use a defined parameter to perform a test cut. The test cut is nominally in the direction of the y-axis. The wafer can be removed and inspected using instruments such as artisans or other instruments. The slope and offset of the cut between the second references. These values provide offset data that can be used to calibrate the position of the line relative to the camera position. In another embodiment, after the first cut, Rotating the wafer 119 by rotating the stage U5G, the rotation should be 90 degrees. The second cut can also be measured to calibrate the rotation level η% so that the rotation stage (10) does rotate (in its tolerance) For example, calibration can be performed to ensure that the street of the wafer is parallel to the axis of the cutting line within ±2 microns from one edge of the wafer to the opposite edge near the centerline of the wafer. In an embodiment, the wafer can be cut multiple times parallel to the first axis and then rotated parallel to the other axis for the cutting. During the cutting, the movement of the yoke 1040 and the platform 1050 can be controlled such that the line is It is desirable to shape the wafer. The speed of the line 1 〇 1 及 and other cutting parameters can be selected to minimize the force on the line 10 10 to minimize the tortuosity. Figure 12 is a schematic representation of a portion of the cutting machine 1 , Cutting machine The platform 1050, the rotating stage 1150, and the tilting/tilting stage 116A including the servo systems ι 164 and 121 用以 for tilting/tilting the work platform 1162. The servo systems 1164 and 1210 can be, for example, a DC servo motor with an encoder. 141220.doc • 42- 201007993 Overturn/tilt level 1160 includes, for example, from Auburn, Massachusetts

Physik Instrumente L.P., part number M-044 D01, provides a tipping/tilting level to the working platform 1162. By physik

Instrumente L.P.'s Mercury-DC Mike controller (part number C-863.10) controls the overturn/tilt level. In the embodiment of Figure 12, the workpiece 1105 can include a wafer 1212 and rivets 12 14 . The workpiece 1105 can include a flange 1220 that can be captured by the clip 1166. When the clip 1166 is closed, the arm 1230 is urged to capture the corresponding feature of the clip 1166 to secure the clip 1166. When the clip 1166 is closed, the rubber pad on the bottom side can determine the pressure on the flange 1220 to securely hold the rivet 1214. Figure 12 also illustrates the electrical connections for the rotary stage motor and encoder. 1252. Figure 13 illustrates a specific embodiment of a control system for cutting machine 1000. The cutting machine 1000 can include a camera 1122, a z-axis motor 1310, a 2-axis encoder liio, an X-axis motor 1320, an x-axis encoder 1322, a 7-axis stepper motor 1126, a y-axis encoder (not shown), and a 0-axis motor 133. 〇, θ-axis controller • (not shown), tilting and tilting motor and individual encoders (not shown). In addition, the cutting machine 1 can include a motor controller '1332 for controlling the z-axis motor 13 10 and the X-axis motor 1320 in accordance with the routines available on the RTS 440 as provided. A management station 1350 can control the tool 1〇〇〇. According to one embodiment, the management station 1350 can be a personal computer, laptop, or another computing component that has sufficient processing and memory to provide program control for the cutting machine. According to a specific embodiment, the management station 135 can be a computer running a Windows-based operating system (Wind〇ws is a trademark of Microsoft Corporation headquartered in Redmond, Washington), such as Wind〇ws χρ or 141220.doc .43· 201007993 Windows Vista with SP1. However, any suitable computing element can function as a management station and in various embodiments the management station 135 can be provided as part of the cutting machine 100. According to a specific embodiment, the management station 1350 can include software 1352 for receiving and processing image data from the camera 1122. Further, the management station 1350 can include a motion controller system 13 54 ', such as the Ni pC] [ 7356 6 channel motion controller manufactured by National Instruments of Austin, Texas. The Gm, MMI or another interface can be provided by the management station 135. For example, LabView 8.5.1, produced by National Instruments, can be used to provide a user interface for controlling the cutting machine. The interface enables, for example, an instant view (nVe View) camera image window in LabView to have an image window with adjustable crosshairs in both vertical and horizontal directions. The position control button/window provides command movement and indication of position. The screen indicator can show the completion of any command movement. The various levels can also be commanded by the "joystick" on the screen or another type of control for the interactive motion of the systems. According to a specific embodiment, the management station 1350 can interface with a motor control system 1360 that can include a stepper motor controller system 1362, such as a National Instruments ΝΙ MID 7604 4-channel motor controller. The stepper motor controller system 1362 can interface with the stepper motor and encoder of the cutting machine 1000 to retrieve data from the encoder and to relay motor control signals to various motors. Further, the 'motor control system 136' can include the control multiplexer 1364 discussed below. The motor control system 136 can have a variety of form factors and can be enclosed in a NEMA enclosure. In general, the management station 1350 can generate commands to the stepper motor controller system 141220.doc -44. 201007993, which in turn can generate motor control signals to control the various motors of the cutting machine 1000. In some cases, if the user wishes to use the built-in motor control routine of the cutting machine 1_, the command and data can be issued to the motor control system provided by the cutting machine 1 . Figure 14 provides a motor control system for a moving shaft and a schematic representation of a motor control system 1360 for controlling the motion of the cut sidewall shape. Although not shown for control of only one axis, the motor control system 1360 can control multiple Motor (for example, Z-axis, y-axis, x-axis, θ-y-axis, Θ-Ζ axis θ-axis motor or other motor). The motor controller system can include control selection logic 141G 'which determines whether to relay commands to the motor controller 1332. The microstep preprocessor logic 142 () can process the number seven sent to the motor controller 332 to allow the motor controller Take a step size that is smaller than the available step size of the rtm4 机 onboard. Otherwise, the signals for the various motors are multiplexed in multiplexer 1430 and provided to stepper motor controller system 1362. The stepper motor controller system 1362 can be coupled to various motors and encoders to operate the cutter in accordance with a routine that is not available to the controller 1332 that supplies the cutting machine. For example, the various motors of the cutting machine 1000 can be operated to cause (iv) wire cutting for the sidewall shape of one of the elements as explained above. This movement is not a standard motor controller that can be used in wire cutting machines because wire cutting machines typically perform straight cuts. Although the motor control systems of Figures 13 and 14 are shown as being distributed, in other embodiments the management station 1350 can interface directly with the cutting machine chest-motor controller to programmatically control the cutting machine to be quietly implemented in other implementations. In an example, the cutting machine can provide a user interface that allows control of 141220.doc • 45· 201007993 cutting machine 1000 to cut the desired sidewall shape. Although an example of a special (four) cutting machine is used in the above specific embodiments, it should be understood that other suitable cutting machines can be modified or designed to allow the wafer.

And the cutting line is moved relative to each of the w methods A U to create the desired sidewall shape. Although various parts and features have been described, it should be understood that such parts and features are exemplary and can be used with any cutting machine capable of cutting the shape of the side wall, such as in the case of a b. During operation, the components of the cutting machine 1_ may be exposed to a coolant stream, such as deionized water. In addition, particulate matter will be removed from the wafer. Various components can be selected to seal against water and particulate protection. </ RTI> </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> In the middle, a plurality of wires can be used to simultaneously cut the side walls. When a diamond coated wire is used, there is usually a free-grinding agent, so that the active region of the particles is not exposed to the abrasive action. Or, there is a free grinding agent. A simple line of slurry can also be used to create a shape. In this case, precautions can be taken to protect the area of action of the die from free abrasives. For example, the cover can be used. To protect the active area of the die while providing a groove through which the wire can be moved to cut the crucible 11. A specific embodiment of the cover is discussed below in connection with Figures 21 and 22. In other embodiments, A layer of protective material is applied to protect the die. Another method of creating a shaped sidewall is to use a grinding procedure. Figure 15 is a specific embodiment of grinding a die with a shape grinding wheel 1 702 using 141220.doc 201007993 A schematic representation of a particular embodiment of Figure 17, a wafer 1700 is mounted on a work surface that can be prepared for forming, as discussed above. The money wheel 1702 is rotated at high speed and is in contact with the wafer 1700. The composition of the abrasive wheel can depend on the substrate being cut, wear and other factors. The grinding wheel can be a metal composite, vitreous, resin based wheel or another type of wheel. As an example, Diamond metal (Ni-P alloy) blade 戋_ Another matrix of abrasive particles with a selected particle size can be used to cut sapphire. The particle matrix in a particular embodiment has a 20 micron level The average size, although other particle size can be used, the forming wheel 17〇2 has a forming zone 17〇6 that is shaped to remove material from the wafer 17〇〇 in a desired pattern. According to a particular embodiment, forming Zone 1706 is shaped to cut the substrate to a desired substrate shape. As material is removed from wafer 17〇0 by forming wheel 1702, the blue to-desired depth is lowered to establish channel 17(4) in other implementations: #中,一Series wheel 1702 can be used for each of the shaped zones 1706 having an inversely closer to the desired LED shape. By performing multiple transfers, a side wall can be brought closer to the desired shape. Moving the wafer and grinding wheel back and forth Either or both until the desired depth of cut is reached. Once all streets (channels) are cut in one direction, the wafer can be rotated 90 degrees and cut in the other direction, resulting in a rectangular shape of the formed substrate Array. Because of the high forces required in grinding, it may be difficult to maintain alignment of such components in the event of a thorough (d) wafer. Therefore, it can leave a mesh-like material! 7〇8 (web 〇f (4)) to keep the various components in the array 141220.doc •47- 201007993 attached to each other. By way of example and not limitation, the web can be approximately 175 to 200 microns thick. The mesh configuration portion can be removed in subsequent processing. In other embodiments, the mesh configuration can be maintained. In this case, the shape of the substrate can be selected as the exit face of the LED using the entrance to the mesh portion (e.g., indicated by 171 )). Because the sidewalls can be designed such that the light does not TIR (or TIR is reduced) in the case where the region 17 1 〇 is in fact the exit surface, the light will not TIR on the surface 1712 of the mesh configuration. Although the forming wheel 1702 is shown as having a forming zone 17〇6 on both sides, the _forming wheel 1702 may have only one forming zone 17〇6. In this case, multiple transfers may be necessary to form the sidewalls on both sides of the channel 1704. In other embodiments, multiple parallel wheels can be used to simultaneously cut multiple channels. According to another specific embodiment, an unformed grinding wheel (e.g., a grinding wheel without forming zone 1706) can be used to cut a desired number of straight faces in the substrate material. Figures 16A through C illustrate a specific embodiment of the use of an unformed grinding wheel to cut a facet of a substrate. In the embodiment of Figure 16A, a wafer 18 is mounted on a working surface. An abrasive wheel 18〇2 is rotated and brought into contact with the wafer circle 1800. As the material is removed from wafer 18 by wheel 18〇2, wheel 1802 is moved to a desired depth to establish a cut 18〇4. This procedure can be repeated for any number of extra corners to create a facet. In FIG. 16B, the wheel reading is angled relative to its position in FIG. 16A and moved again by the desired number to likewise 'in FIG. 16C' the rounded corner is angled relative to its position in the figure and The desired amount is moved to create the cut 808. Further, as shown in Figure 16c, the cuts can be made to leave a smaller web of material as needed 141220.doc • 48. 201007993. Multiple passes can be made or multiple wheels can be used to create a list of side walls. The wheel 18〇2 can thus be angled or the other wheel can be used to cut the other side of the channel 1814. Once the channel running in one direction ends, the channel can be cut in the vertical direction (or the other direction). The side walls can also be cut in other orders. In one embodiment, two cuts (e.g., cuts 1, 1, 806, and 1808) for one sidewall can be made from the vertical direction at the following angles i, 7, and 20 degrees. The sidewalls can thus be curved by grinding to create a curve having the desired profile or number of cuts or the corners can be selected to create a small profile sidewall. Although three facets are used in this example, any number of facets can be selected and cut. In addition, such cutting can be performed using any desired cutting mechanism such as wire saw, ultrasonic milling or another mechanism. In the example of Figures 16A-C, a grinding wheel having a straight side is used. As shown in the specific embodiment of Figures 16D-F, the same angle can be cut using a grinding wheel having an angled portion instead of angling the entire wheel. For example, in the particular embodiment of Figure 16D, the grinding wheel 1812 can include two sections 丨8丨4 and 丨8丨 sections 1814 that can have any desired contour, such as the contour of a typical straight grinding wheel. The outer region forming section 1 816 can also be straightened, but can be angled at a desired angle to cause known grinding wheel 1 812 to cut in the substrate material at a desired angle. It can be used for different rounds of grinding for the parent corner. For example, in addition to section 1816, the grinding wheel can have a section 1818 that is different from section 16 16 as shown in Figure 16E or an angle other than section 1816 or 1818 in Figure 16F. Section 1820. 141220.doc -49· 201007993 Figures 16G through L are schematic representations of portions of other specific embodiments having wheels 1822 for cutting segments of similar angles as shown in Figures 6D-f. In the particular embodiment of Figures 16G through I, wheel i812 includes segments 1824, 1826, and 1828 corresponding to segments 1816, 1818, and 1820 of Figures 16D through F. Further, the embodiment of Figures 16G through I includes angled sections on the other side of the wheel for forming one side of a channel at a time. Specific embodiments of Figures 6J through L include sections 1830, 1832, and 1834 corresponding to sections 1816, 1818, and 1820 of Figures 16D through F. Therefore, various shapes of the grinding wheel having the angled section can be used for straight cutting. In the above specific embodiment, the grinding wheel cuts a single corner of the substrate material. However, in other embodiments, the grinding wheel can cut any number of desired angles. 16M through N are schematic representations of a particular embodiment of a wheel 1836 having a plurality of angled sections, such as sections 1838, 184A, and 1 842, on one or both sides to establish a small size with one wheel. Faceted side wall. Although only three facets are displayed, more facets can be created. In addition, the use of a grinding wheel for forming can occur using multiple grinding wheels having various configurations as needed or desired. One advantage of the embodiment of Figures 16D-N and Figure 15 is that the shaft or other component that drives the grinding wheel can be held in a fixed position. Etching illustrates a chemical process that removes substrate material in a highly controlled manner to produce the proper shape. There are generally two types of etching methods: wet type engraving and dry etching. Wet etching involves the use of a liquid phase etchant to remove the substrate material. In dry etching, paddle etching, and reactive ion etching, ions are built up and applied to the substrate. Here, the material is removed from the substrate based on chemical reactions or 141220.doc • 50· 201007993 particle momentum. Starting with a wafer of substrate material that can further include a material comprising a quantum well region, a specific photoresist pattern can be deposited on one side of the wafer. The wafer is then etched. The location on the wafer covered by the photoresist will not be etched, and the material will be removed where there is no photoresist. There are many ways to tune the program to achieve the desired shape at the edge of the photoresist. For example, a thicker photoresist layer can be applied and then the photoresist layer can be sacrificially removed during the etching process, or other sacrificial layers can be used in conjunction with the photoresist. These layers are removed by time with the etchant in a manner such as to produce the desired shape of the led substrate. This can be used to accurately engrave the wafer to produce a shaped substrate. Another way is to use multiple resists and multiple etching steps. Each photoresist and etch step can be used to remove a smaller layer of material. Multiple small steps can be used to get the desired 3D shape. Figure 17 is a schematic representation of one example of etching. In FIG. 17, the wafer 19 is etched to form a shaped substrate 193 amp amp 〇 ^ ^ 光 光 施加 施加 施加 施加 施加 applied to one surface of the wafer 1900 in the desired pattern to make the wafer 19 〇 The portion of the surface of the crucible is covered with a photoresist 1910. After application of the photoresist 1910, an etchant is applied to the same surface of the photoresist 1900 to which the photoresist is applied. The etchant removes the substrate material 1920 to form the shaped substrate 193 amp amps to 193. The photoresist and etchant can be applied in successive layers and patterns to achieve a desired sidewall shape. The etch parameters can be based on the substrate material. The etch rate varies depending on the etchant and the substrate. For substrate materials such as sapphire and tantalum carbide used in LED applications, the etch rate using reactive ion etching can range from 250 nm to 2.5 uni per minute. It is based on the above etch rate of 141220.doc -51 · 201007993 ', %. One of the advantages of an etching procedure is that it can achieve a satisfactory surface light that does not require subsequent grinding. Another method of forming such sidewalls is used Ultrasonic shaping. According to one embodiment of ultrasonic shaping, ultrasonic forming can utilize a suitable hard material (e.g., (4) another material) having one or more shaped rods. The shape of the material to be removed from the die. An abrasive is applied to the crucible and the ultrasonic filament is activated to remove the material from the substrate. Ultrasonic forming is a schematic representation of a specific embodiment. A wafer 2000 is mounted on a working surface. An abrasive slurry can be continuously applied to the surface of the wafer 2000, and the wafer 2 can be completely or Partially immersed, supported in the grinder slurry 2001 or wafer 2 can be coated in the grind slurry 1. Lower the tool head 2〇〇2 until it is almost in contact with the wafer. Ultrasonic vibration (indicated by arrow 2004) in a direction perpendicular to the plane of the wafer, thereby causing the abrasive particles in the slurry 2〇〇1 to cut the channel 2006. Although the direction of movement is shown in Figure 18 as Vertical but the wafer 2000 can be mounted in other orientations. Therefore, the movement of the tool 2〇〇2 can be in another direction, such as horizontal or at an angle. The frequency of the vibration can be selected based on the substrate material and other factors. Amplitude. Those skilled in the art will appreciate that ultrasonic tools for cutting sapphire grains typically operate at frequencies above 17 kHz and typically at about 2 kHz. Peak to peak amplitudes are typically about 20 microns. The above parameters are provided by any of the appropriate frequencies and amplitudes and by way of example. As the channel 2006 is continuously worn away by the abrasive slurry 2001, the I41220.doc-52-201007993 is lowered to 2002 to the desired depth in the wafer. Tool 2 can thoroughly (d) the substrate material or leave a web of material 2010, as explained above. In general, the abrasive slurry 2001 can include any suitable size of one or more suitable materials by way of example and not limitation. The slurry can be made from deionized water containing particles having a diameter of from about 2 to about 6 microns. According to one embodiment, once all streets in a single direction are established, the crystal is rotated relative to the tool. Circle and build a street in the other direction (usually orthogonal). In other embodiments, a single channel 2006 can be cut at a time. According to another embodiment, the tool 2〇〇2 can have a "waffle" shape that allows all of the side walls to be cut at one time. According to another embodiment, laser ablation can be used. Laser ablation uses a South Power laser to generate LEDs by removing or discharging quantum well regions or substrate materials. Each laser pulse will remove only a trace amount of material. The laser is translated to remove material with each subsequent pulse. A 3D shape can be removed by translating in the χ_γ &amp; z direction. Figure 29 is a schematic representation of laser ablation. In the example of Fig. 29, a wafer 21 to a support material 2102 is optionally mounted. The laser 2110 is applied to the wafer 21A to ablate the substrate material 2120' to form the formed substrate 2130a, 2130b, and the like. The use of known techniques 'laser stripping" removes approximately 5 um to 1 mm per minute in carbon carbide and sapphire. Figure 20 is a schematic representation of another embodiment of a system for laser ablation. In the particular embodiment of Figure 20, wafer 22 is mounted to support structure 2202. A laser 2210 is applied to the wafer 2200 to strip the substrate material 2220, thereby forming the shaped substrates 2230a through 223 Ob. In the particular embodiment of FIG. 22, 141220.doc -53-201007993 a water column 2240 is used as a waveguide for the laser 2210. One advantage of using a water column waveguide is that the water column can be used to cool the substrate material 222 and transport the removed material. However, other embodiments can utilize other waveguides, such as fiber waveguides. According to another embodiment, water jetting can be used to strip a wafer to form a substrate of a desired shape. Figure 21 is a schematic representation of one embodiment of water jet ablation. As shown in Fig. 21, a wafer 23 is mounted on the support structure 23 03 and placed on a work surface. The water jet 23 〇 4 provides a continuous flow or short pulse of water 2306 having sufficient velocity to strip the substrate 2308 in each of the stages. The procedure by which water pulses are used to ablate a wafer can be related to laser ablation similar to the procedure described above. In a specific embodiment of water jet ablation, the water jet can be used to completely cut through the wafer at an angle, then slightly offset the corner and use water jet to cut through the wafer at a slightly higher angle. Thereby, the formed substrates 233a, 2330b and the like are finally produced. In another embodiment, the water jet can be filled with an abrasive material (e.g., industrial diamond particles) to increase the rate at which the material is ablated. The size of the particles can be chosen to create a side ® wall shape with a defined smoothness. For example, the particles can be approximately 2 〇 to 6 〇 microns or another selected large I cover 2340 which is used to protect the area of the wafer from water spray 2306 - and any particulate matter. The cover 2340 can have openings that are spaced to allow water to impinge on the wafer 23 while protecting the electrical regions of the formed optical components. In addition to providing protection, the cover 234 can also be used to inhibit the wafer 2300 in the tool. According to another - specific implementation of your J, a particle nozzle can be used to remove the base plate 141220.doc • 54- 201007993. Figure 22 is a schematic representation of particle jet ablation. In the embodiment of Figure 22, a wafer 2400 can be mounted to a support structure. A source 2404 can provide a flow of particles 2406 impinging on the wafer 2400 to remove material from the substrate 2408. The flow of particles 2406 can be used to completely cut through the circle at a certain angle. Multiple transfers can be made to cut the wafers at a higher angle, ultimately resulting in a substrate of the desired shape. The size of the particles can be chosen to create a sidewall shape with a defined smoothness. For example, the particles can be approximately 20 to 60 microns or another selected size. Depending on the particle size, the power of the particle jet, and other factors, the particle spray 2406 can have a characteristic angle that is too large to form all of the facets of a sidewall. However, because of the rapid material removal provided by a particle jet, it is advantageous to use particle jetting for bulk removal or to begin the forming process and use other methods such as etching, ultrasonic machining or grinding to accomplish this. Wait for the side walls. A cover 2440 can be used to protect the area of the wafer from the flow of particles 2406. The cover 2440 can have openings that are spaced to allow particles to strike the wafer 2400 while protecting the electrical regions of the formed optical components. In addition to providing protection, the cover 2440 can also be used to inhibit the wafer 2400 from being in the tool. Although the above method of abating a material wafer to form a formed substrate has been separately described, the above method can be combined. For example, particle flow stripping or water jet ablation can be used for bulk removal in the first transfer and then ultrasonic cutting, milling, grinding, etching or another method can be used for more accurate shaping. Various methods can be used in any order to shape the optical elements. 141220.doc -55- 201007993 Similarly, various other combinations of methods and techniques for removing substrate material from a wafer to produce LEDs can be used as appropriate depending on the substrate material. In addition, other methods such as ultrasonic machining can be used to form the shaped substrate. In addition, techniques such as ultrasonic milling can be used. While the disclosure has been described with respect to the specific embodiments, it is understood that the specific embodiments are illustrative and the scope of the invention is not limited to the specific embodiments. Many variations, modifications, additions and improvements to the specific embodiments described above are possible. For example, by providing examples of various ranges and sizes

Inch and LED can be operated in other sizes using other sizes. By way of example, although the shaped substrate has been described with respect to sapphire and tantalum carbide, other substrates that allow light transmission can be used. For example, the substrate can be made of glass or diamond. In one embodiment, the moldable glass can be used to mold the substrate to provide a cost effective and easily formed substrate. It is intended that such changes, modifications, additions and improvements fall within the scope of the present invention as described in the following claims. [Simple description of the map]

A more complete understanding of the embodiments of the present invention and the advantages thereof may be obtained by reference to the above description in conjunction with the accompanying drawings in which the same referenced the same features and wherein: FIG. 1A to FIG. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a schematic representation of a set of lines from one point to a different distance from the point; a schematic representation of a top view of the surface traveling light; FIG. 3 provides a table of one embodiment of an LED; .doc •56· 201007993 Figure 4A is a schematic representation of a section of a model of a led for the shape of the sidewall; Figure 4B is a schematic representation of one of the portions of one of the sidewalls of an LED; Figure 4C is an illustration A computer program can be used to define a schematic representation of a facet for a side wall; Figure 4D is a schematic representation of a particular embodiment of an LED in which sidewalls are shaped to cause TIR such that light is reflected from the sidewalls to the exit surface; Figure 5 is a schematic representation of one embodiment for estimating the effective solid angle; Figures 6E are schematic representations of another embodiment for estimating the effective solid angle; Figure 7 is a A schematic representation of a specific embodiment of an LED; Figures 8A through 8B are schematic representations of a specific embodiment of an LED array; Figure 9 is a schematic representation of the use of a line of ore and a portion thereof to cut a substrate. Figures 10 through 14 are a line A schematic representation of a specific embodiment of a mine; FIG. 15 is a schematic representation of one embodiment of grinding a wafer; FIGS. 16A-F are schematic representations of a specific embodiment of cutting a substrate using a grinding wheel and FIG. 16G A schematic representation of an additional embodiment of an N-type grinding wheel; Figure 17 is a schematic representation of one embodiment of a wafer engraved; Figure 18 is a schematic representation of one embodiment of forming a substrate using ultrasonic shaping 141220.doc -57- 201007993 Figure 19 is a schematic representation of one embodiment of laser ablation &amp; Figure 2 is a schematic representation of another embodiment of a laser ablation of Figure 17 which is one of the specific examples of water jet erosion BRIEF DESCRIPTION OF THE DRAWINGS FIG. 22 is a schematic view of one embodiment of particle jet sparing and [description of main component symbols] represents a substrate 1 20 25 50 55 55 55 55 55 55 56 56 59 60 65 70 75 80 95 100 Quantum well area

LED light emitting area

Interface exit surface / exit surface surface surface surface / exit surface light point / light light

Side wall side wall ray incident angle incident angle maximum angle side wall 141220.doc -58- 201007993 102a to 102o plane facet 105 side wall 110 light 115 point 120 detector plane * 130 sphere * 132 point source 134 circle w 136 surface 137 half angle 150 'Face / entry face 152 Effective source origin 153 Center normal 154 Effective output origin 155 Exit surface φ 156 Target plane 159 Sphere 160 Forming substrate * 161 Sphere 163 Edge 400 Part 410 Light 412 Focus 415 Parabola 141220.doc -59- 201007993 417 Part 420 Sidewall 430 Exit face 440 Exit angle 450 Half angle 500 Trial balance 510 Curve 540a Exit angle line 540b Exit angle line 550 Half angle line 560 Parabolic focus line 565 Angle to side line 570 Line 575 Radius line 577 Coordinate transformation line 700 LED 710a exit surface 710b exit surface 800 LED array 810a to 810c LED 820 wafer material 830a point 830b point 900 wafer 141220.doc -60- 201007993 902 mounting block 904 adhesive layer 906 grinding name cutting line 910 channel 1000 cutting machine 1010 Cutting line 1020 pulley 1022 sliding Wheel • 1024 Pulley 1026 Pulley 1028 Reel 1030 Reel 1038 Cooling System 1050 Platform 1105 Workpiece φ mo Ζ Axis Encoder 1120 Camera System 1122 Camera ' 1123 Camera Mount 1124 Mobile System 1126 Motor / y-axis Stepper Motor 1128 Tube 1130 Light Source 1150 Rotating Stage 141220.doc -61 - 201007993 1154 Turntable 1160 Overturn/Tilt Stage 1162 Work Platform 1164 Servo System 1166 Clip 1172 Camera 1210 Servo System 1212 Wafer 1214 Rivet 1220 Flange 1230 Arm 1250 埠1252 埠1310 z-Axis Motor 1320 X-Axis Motor 1322 X-axis encoder 1330 X-axis motor 1332 Motor controller 1350 Management station 1352 Software 1354 Motion controller system 1360 Motor control system 1362 Stepper motor controller system 1364 Control multiplexer 141220.doc -62- 201007993 1410 Control selection Logic 1420 Microstep Preprocessor Logic 1430 multiplexer 1432 Motor Controller 1700 Wafer ' 1702 Grinding Wheel / Forming Wheel * 1704 Channel 1706 Forming Zone • 1708 Mesh Material 1710 Zone 1712 Surface 1800 Wafer 1802 Grinding Wheel 1804 cutting 1806 Cutting φ 1808 Cutting 1812 Grinding wheel 1814 Channel/section* 1816 Section 1818 Section 1820 Section 1822 Wheel 1824 Section 1826 Section 141220.doc -63- 201007993 1828 Section 1830 Section 1832 Section 1834 Zone Section 1836 Wheel 1838 Section 1840 Section 1842 Section 1900 Wafer 1910 Photoresist 1920 Substrate Material 1930a to 1930c Forming Substrate 2000 Wafer 2001 Abrasive Slurry 2002 Tool Head/Tool 2004 Arrow 2006 Channel 2010 Mesh Material 2100 Wafer 2102 Support material 2110 Laser 2120 Substrate material 2130a Forming substrate 2130b Forming substrate 141220.doc ·64· 201007993

2200 wafer 2202 support structure 2220 substrate material 2230a to 2230b forming substrate 2240 water column 2300 wafer 2302 support structure 2304 water jet 2306 water/water jet 2308 substrate 2330a forming substrate 2330b forming substrate 2340 cover 2400 wafer 2404 source 2406 particle 2408 substrate 2440 Cover 141220.doc -65-

Claims (1)

201007993 VII. Patent Application Range: 1. A method of manufacturing an optical component, comprising: providing a desired substrate shape for an optical component having a shaped substrate portion, the portion comprising: an interface to a non-substrate layer, Adapted to receive light from a light-emitting region of the optical element; an exit surface having at least 7% of a minimum area required for one of a desired half angle of light projected from the LED Wherein the exit surface is a selected distance from the interface; a set of sidewalls, each sidewall being positioned and shaped such that at least a majority of the light having a constant transmission path from the interface to the sidewall is less than or equal to Reflecting onto the exit surface at an incident angle of a critical angle of the exit surface on the exit surface; forming a substrate material based on the desired substrate shape to form one or more opticals using one of the following Forming substrate portion of the component: a wire saw, a particle jet cutting, a set of straight grinding wheels, a set of grinding wheels, wherein each of the grinding wheels has an angular section to Cutting the substrate to the desired angle, or to use a laser having a guiding of water to the substrate. 2. The method of claim 1, further comprising: mounting the wafer in a tool, wherein the wafer comprises the substrate; and protecting portions of the wafer to prevent damage to the portions during forming. The method of claim 1, further comprising mounting a wafer to the support structure wherein the wafer comprises the substrate material. 4. The method of claim 6, wherein forming the substrate material further comprises removing a portion of the support structure. 5. The method of claim 1 wherein forming the substrate material further comprises leaving a web of material between the shaped substrate portions for the LED. 6. The method of claim 1, wherein forming the substrate comprises cutting the substrate in three or more selected angles. 7. The method of clause 6, wherein cutting the substrate at a selective angle to form the sidewall comprises cutting the substrate at eight or eight selection angles. 8. The method of claim 1 wherein the exit surface has a minimum area required for radiation conservation and the distance is a minimum distance such that all rays having a constant transmission path from the interface to the exit surface will The incident surface is incident on an angle smaller than the critical angle on the exit surface. 9. A method of forming an LED, comprising: providing a dome, the wafer comprising a substrate material and one or more layers for the [ED quantum well region; determining an expectation corresponding to an LED a substrate shape comprising: - an exit surface opposite to an interface of the to-non-substrate layer and at a distance from the interface, the interface being adapted to receive light from one of the (four) light-emitting regions, The exit face has at least 70% of a minimum area required for a desired half angle of light projected from the shaped substrate to conserve radiation; and a set of side walls, wherein each side wall is positioned and shaped such that there is from the interface At least a majority of the light rays of the side wall that are always in the transmission path are reflected to the exit surface by an incident angle of less than or equal to - critical (4) on the exit surface on the exit surface 141220.doc -2 - 201007993; The wafer is mounted to a support structure; the substrate material is diced to form one of the LED shaped substrate portions based on the desired gusset shape. 10. The method of claim 9, the mounting of the sergeant 立 1 1P cutting the substrate comprises cutting the substrate using a line of recording. The method of claim 9, wherein the cutting the substrate comprises cutting the substrate at a selected angle to form a sidewall using - or a plurality of straight grinding wheels. 12. The method of claim 11 wherein the cutting the substrate at a selected angle to form a sidewall comprises cutting the substrate in three or more selected angles. 13. The method of claim 12 wherein the substrate is cut at a selected angle to form the sidewall comprising cutting the substrate at eight or eight selection angles. 14. The method of claim 9 wherein the exit surface has a minimum area for radiation. 15. The method of claim 9, wherein forming the substrate further comprises cutting the substrate at a selected angle to form a sidewall using three or more grinding wheels: wherein the three or more grindings Each of the wheels is shaped by cutting an angled section of the substrate with a desired angle. , 141220.doc