TW200933377A - Method and system for enhancing read performance in serial peripheral interface - Google Patents

Method and system for enhancing read performance in serial peripheral interface

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Publication number
TW200933377A
TW200933377A TW097103683A TW97103683A TW200933377A TW 200933377 A TW200933377 A TW 200933377A TW 097103683 A TW097103683 A TW 097103683A TW 97103683 A TW97103683 A TW 97103683A TW 200933377 A TW200933377 A TW 200933377A
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Taiwan
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address
enhanced
pin
data
receiving
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TW097103683A
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Chinese (zh)
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TWI376606B (en
Inventor
Chun-Hsiung Hung
Kuen-Long Chang
Chia-He Liu
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Macronix Int Co Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659Command handling arrangements, e.g. command buffers, queues, command scheduling
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/42Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4282Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
    • G06F13/4286Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus using a handshaking protocol, e.g. RS232C link
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604Improving or facilitating administration, e.g. storage management
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671In-line storage system
    • G06F3/0673Single storage device

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)

Abstract

A method for reading data in an integrated circuit includes receiving a read command, which is associated with an enhanced data read, and receiving a first address from a plurality of input/output pins. The method includes receiving a first performance indicator and determining whether an enhanced read operation is to be performed based on at least information associated with the first performance enhancement indicator. The method includes waiting n clock cycles, where n is an integer, then outputting data from a memory array in the integrated circuit using the plurality of input/output pins concurrently. The method also includes performing an enhanced read operation, if it is determined that the enhanced read operation is to be performed. In an embodiment of the method, performing an enhanced read operation includes receiving a second address and a second performance enhance indicator without receiving a read command.

Description

200933377 九、發明說明: 【發明所屬之技術領域】 β本發明係有關於積體電路及其操作。特別是本發 明提供一種關於在積體電路中用於增強資料讀取效能 =方法與系統。而其中一例為本發明可以被應用於搭配 使序列周邊介面協定之序列記憶元件中以達成快 =料傳送速率。然而必須理解的是本發明具有較為 ❹ 15 鲁 20 25 想:,應用範圍。舉例而言,本發明可以用在其他單 入式的記憶元件如動態隨機存取記憶體、靜 存取記憶體、平行快閃記憶體或是其他非揮發 本發明亦可以應用於—序列周邊介面以用來進 盯電子元件之間的通訊。 【先前技術】 中。泛地使用於許多冑子方面的應用 取此“胞;二多:輸入輸出接腳以放置存 線需求,序列快閃纪㈣於3為了回應增加的空間及你 目,诵當借]隐體疋被開發以提供較少的接腳數 可以提供給。此序列快閃記憶體 及儲存影像聲作程式瑪下載之用,以 位址位元,如此㈣讀送資料或 5 200933377 15 ❹ 20 因此,如同上述需 周邊介面之用。 要能夠提供―種改良技術以供序列 【發明内容}· ㈣t明係有關於積體電路及其操作。特別是關於在 本發明可以被應用=;用—?二统二: ,,本發明具有較為寬廣= 範逮 :動用在其他單獨或是嵌入式的記“件 快閃記憶體或是其他非揮發記憶體可 用於一序關邊介面來進行電子元應 ,本發明提供—種自—積體電路中 法。此方法包含:接收一讀取命令,該讀取 =與:增強資料讀取相關,且自複數個輸入/輸出接腳 itfΪ f法包含接收—第—效能增強指示, =據至>、-個與該第—效能增強指示相_資訊,決定 疋否即將進行-增_取操作。此方法包含等待n個時脈 =’其中η是-個整數’之後同時使用複數個輸入/輸 出接腳自該積體電路中的-記憶陣列輸出㈣,該資料與 該第-讀取位址相關。此方法包含進行—增_取操作, 根據與該效能增強指示相關的資訊,決定是否即將進行一 增強讀取操作。 在一特定實施例中,進行該增強讀取操作包含自該複 數個對應的輸入/輸出接腳接收一第二位址,接收一第二 效能增強指示,且根據至少一個與該第二效能增強指示相 6 25 200933377 Ϊ:輸=?、自該積體電時Si β第一讀取位址相關。 只η·,、 d=!中,本發明也包含至少根據與該第二效能 ’決定是否即將進行—第二增強= 包含:二—4Γ二定ΐ否即將進行—增強讀取操作 匕3比較一效旎增強指示中的一第一位元與一 =。^-特,實施例中’此積體電路包含—序列周 腳安m此序朋邊介面接腳㈣組態包 腳是晶片選擇(CS#)、帛二接腳是資料輸出(_ ^腳衫人保護(爾/SI〇2)、第四接贱親(G第 ,五接腳是資料輸人(聰。〇)、第六接腳是序) 15 (SCLK)、第七接腳是保留(HOLD#/SI〇3)以及第八腳曰 供應電壓(VCQ。在-實施例中,此第—位址在 週期内接收。在一特定實施例中,此第一效能增強护示1 含四個指示位元P4、P5、I>6和P7在第一增強指示脈 期接收’而另四個指示位元P〇、PI、P2和P3則在第_。 強指示時脈週期接收。每一個第一增強指示時脈週期;= 接收的四個指示位元之一會與在第二增強指示時脈= 所接收的四個指示位元對應之一進行比較。在^ 中,會決定即將進行一增強讀取操作,假如下列條 1 立:(P7泮3)且(P6#P2)且(P5#P1)且(P4#p〇)。 ’、午成 根據另一實施例’本發明提供一種自一積體電路 取資料之方法。此方法包含:接收一讀取命令,其與, 相同頁面讀取資料相關。此方法包含自對應之複數個 /輸出接腳接收一第一位址,且接收一第一效能増強 示’和根據至少一個與該第一效能增強指示相關的胃資气指 7 25 200933377 決定是否即將進行-增強讀取操作。財 5 * t , , Qf ^ ^ 5200933377 IX. Description of the invention: [Technical field to which the invention pertains] β The present invention relates to an integrated circuit and its operation. In particular, the present invention provides a method and system for enhancing data read performance in integrated circuits. One of the examples is that the present invention can be applied to a sequence memory element that matches a sequence peripheral interface to achieve a fast material transfer rate. However, it must be understood that the present invention has a relatively ❹ 15 Lu 20 25 thought:, the scope of application. For example, the present invention can be applied to other single-input memory elements such as dynamic random access memory, static access memory, parallel flash memory or other non-volatile inventions. The invention can also be applied to the sequence peripheral interface. Used to trace the communication between electronic components. [Prior Art] Medium. The application used in many scorpions is taken from this "cell; two more: input and output pins to place the storage line requirements, sequence flash code (four) in 3 in response to the increased space and your purpose, 诵当]疋 was developed to provide a smaller number of pins that can be supplied. This sequence of flash memory and stored image sounds are used for program downloads, with address bits, so (4) read data or 5 200933377 15 ❹ 20 As the above requires the peripheral interface. To be able to provide a variety of improved techniques for the sequence [invention content] · (d) t Ming is related to the integrated circuit and its operation. Especially in the invention can be applied =; with -? Ertong 2: ,, the invention has a relatively broad scope = Fan catch: used in other separate or embedded notes "flash memory or other non-volatile memory can be used for the interface to carry out the electronic component The present invention provides a method in a self-integrated circuit. The method includes: receiving a read command, the read= is related to: enhancing data reading, and the plurality of input/output pins itfΪf method includes receiving-first performance enhancement indication, = according to >, - And the first-performance enhancement indication_information determines whether the upcoming-enhanced-take operation is performed. The method includes waiting for n clocks = 'where η is - an integer' and simultaneously using a plurality of input/output pins from the -memory array output (4) in the integrated circuit, the data and the first read address Related. The method includes performing an up-and-take operation to determine whether an enhanced read operation is about to be performed based on information related to the performance enhancement indication. In a specific embodiment, performing the enhanced read operation includes receiving a second address from the plurality of corresponding input/output pins, receiving a second performance enhancement indication, and enhancing according to the at least one and the second performance Indication phase 6 25 200933377 Ϊ: Input =?, the first reading address of Si β is related from the integrated body. In the case of only η·, d=!, the present invention also includes determining whether or not to proceed according to at least the second performance. The second enhancement includes: 2 - 4 Γ ΐ 即将 即将 即将 — — — — 增强 增强 增强 增强 增强 增强 增强 增强 增强 增强One effect is to enhance a first bit in the indication with a =. ^-Special, in the embodiment, 'this integrated circuit contains—sequence of the foot of the foot, the order of the interface, the interface pin (four) configuration package is the chip selection (CS#), the second pin is the data output (_ ^ foot Shirt protection (Er / SI 〇 2), fourth 贱 ( (G, fifth pin is the data input (Cong. 〇), the sixth pin is the order) 15 (SCLK), the seventh pin is Retaining (HOLD#/SI〇3) and the eighth pedal supply voltage (VCQ. In the embodiment, this first address is received in a cycle. In a particular embodiment, this first performance enhancement guard 1 The four indicator bits P4, P5, I>6 and P7 are received at the first enhancement indication period and the other four indicator bits P〇, PI, P2 and P3 are at the _th. Strong indication clock period reception Each first enhancement indicates a clock cycle; = one of the four received indication bits is compared with one of the four indicated indication bits at the second enhanced indication clock = in ^ It is decided that an enhanced read operation is about to be performed if the following bars are set: (P7泮3) and (P6#P2) and (P5#P1) and (P4#p〇). ', 午成 according to another embodiment' The invention provides a self-contained body A method for fetching data, the method comprising: receiving a read command associated with reading data on the same page. The method includes receiving a first address from the corresponding plurality of/output pins, and receiving a first performance Reluctantly indicating 'and according to at least one of the first indication of the first performance enhancement indication related to the gas index finger 7 25 200933377 to decide whether to proceed - enhanced read operation. Cai 5 * t , , Qf ^ ^ 5

20 /輸出接腳自一dk陣列輸出資料,該資料與該诗 位址相關。此方法也包含進行—增強頁面讀取,二 增強指示相關的資訊,決定是否即將進行該增強 兮禮進行該增強頁面讀取操作包含自 忒複數個對應的輸入/輪出接腳接收一第二位址, 第二效能增強指示,且根據至少—個與該第二效能 示相關的資訊’決定是否即將進行—第二增強讀取^二 且等待η個時脈週期,之後同時使用該複數個輸入/輸出 接腳自該積體電路中輸出資料,該f料與該第二讀取位址 相關。在-實施例中’此積體電路包含一序列周邊介面接 腳安排組態’此序列周邊介面接腳安排組態包含 疋晶片選擇(cs#)、第二接腳是資料輸出(s〇/SI〇 接腳是寫入保護(WP#/SI02)、第四接腳是接地(G [ =是笛身料輸入卿0〇)、第六接腳是序列時脈 LΪ壓(^腳是保留(__)以及第八接腳是 根據一替代實施例,本發明提供一種增強資料讀取之 1統:此系統包含-個或多個元件’組態為接收一讀取命 7,其與一增強資料讀取相關。此系統包含一個或多個元 件,組態為自複數個輸入/輸出接腳接收一第一位址。此 系統包含一個或多個元件,組態為接收一第一效能增強指 =二此系統也包含一個或多個元件,組態為根據至少一個 、、°亥ί效此增強指示相關的資訊,決定是否即將進行一 、曰強έ貝取操作。此系統包含一個或多個元件,組態為等 η個時脈週期’其巾η是—個整數,之後同時使用複數個 8 25 933377 輸入/輪出接腳自該積體 該資料與該第1取位^ =的—記憶陣列輸出資料, 件’組態為進行該增強讀=作此糸統包含i或多個元 強讀取操作。 貝取_,假如決定即將進行該增 “包==ί;二 騎該增強讀 ι_自該複數個輸入/輸出接腳接收一第二:址,· e 15 20 2·接收-第二效能增強指示;以及 3.等待η個時脈週期,其中 複數個輸入/輸出接腳自該該 輸出資料,該資料與該第二積讀體取 根據與該第二』個或多個元件以至少 路包含特定實施例中,此積體電 ,且態包含第-接腳是晶片選擇(cst ,輸出,101)、第三接腳是寫人保護(卿疋 第四接腳疋接地(GND)、第五接聊是資料輸入(SI/S 、 第六接腳是序列時脈(SCLK)、第七接腳是保 (H0LD#/SI03)以及第八接腳是供應電壓(vcc) ^在一實施 例中,此第一複數個位址段落在六個時脈週期内接收。在 一某些實施例中,此第一效能增強指示包含四個指示位元 P4、P5、P6和P7在第-增強指示時脈週期接收,而另四 個指示位元P0、P卜P2和P3則在第二增強指示時脈週期 接收,其中,會決定即將進行一增強讀取操作,假如下列 條件成立:(P7泮3)且(P6#P2)且(P5评1)且(P4封>〇)。 9 25 200933377 ❹10 15The 20/output pin outputs data from a dk array, which is related to the poem address. The method also includes performing - enhancing the page reading, the second enhancing the indication related information, determining whether the enhancement is about to be performed, and the enhancing page reading operation comprises selecting a plurality of corresponding input/rounding pins to receive a second a second performance enhancement indication, and based on at least one information related to the second performance indication, determining whether to proceed - the second enhanced reading and waiting for n clock cycles, and then using the plurality of clocks simultaneously The input/output pin outputs data from the integrated circuit, and the f material is associated with the second read address. In the embodiment, the integrated circuit includes a sequence of peripheral interface pin arrangement configurations. The sequence peripheral interface pin arrangement includes a chip selection (cs#) and the second pin is a data output (s〇/ The SI〇 pin is write protection (WP#/SI02), the fourth pin is grounded (G [= is the flute input input 0〇), and the sixth pin is the sequence clock LΪ (the foot is reserved) (__) and the eighth pin are according to an alternative embodiment, the present invention provides an enhanced data reading system: the system includes one or more components 'configured to receive a read command 7, which is associated with a Enhanced data read correlation. The system includes one or more components configured to receive a first address from a plurality of input/output pins. The system includes one or more components configured to receive a first performance Enhanced Finger = 2 This system also contains one or more components, configured to determine whether or not to proceed with a barely populating operation based on at least one of the information related to the enhanced indication. This system contains one or Multiple components, configured to wait for n clock cycles 'the towel η is an integer, Simultaneously using a plurality of 8 25 933377 input / wheel-out pins from the integrated body of the data and the first bit ^ = - memory array output data, the piece 'configured to perform the enhanced read = for this system contains i Or a plurality of meta-strong read operations. Becker _, if it is decided that the increase is "package == ί; two rides the enhanced read ι_ from the plurality of input/output pins to receive a second: address, · e 15 20 2·receive-second performance enhancement indication; and 3. waiting for n clock cycles, wherein a plurality of input/output pins are from the output data, the data and the second integrated reading body are taken according to the second The one or more components are included in at least the particular embodiment, the integrated body, and the state includes the first pin is the wafer selection (cst, output, 101), and the third pin is the write protection (Qing 疋The four-pin grounding (GND) and the fifth connection are data input (SI/S, the sixth pin is the sequence clock (SCLK), the seventh pin is the protection (H0LD#/SI03), and the eighth pin. Is the supply voltage (vcc) ^ In an embodiment, the first plurality of address segments are received in six clock cycles. In some embodiments The first performance enhancement indication includes four indicator bits P4, P5, P6, and P7 received at the first-enhanced indication clock cycle, and the other four indicator bits P0, P, P2, and P3 are at the second enhanced indication. Pulse cycle reception, in which it is determined that an enhanced read operation is to be performed, if the following conditions are true: (P7泮3) and (P6#P2) and (P5 rating 1) and (P4 sealing > 〇). 9 25 200933377 ❹10 15

20 根據另一替代實施例,本發明提供自一積體電路中讀 取資料之方法。此方法包含接收與一增強資料讀取相關的 第一讀取命令,且處理與第一讀取命令相關的資訊。此方 法包含接收一第一複數個位址段落,每一第一複數個位址 段落自其舍應的複數個輸入/輸出接腳同時接收。此方法 包含至少根據與第一複數個位址段落相關的資訊,產生第 一讀取位址。此方法也包含接收一第一效能增強指示,且 根據與此第一效能增強指示相關的資訊決定是否即將進 行一增強讀取操作。此方法包含同時使用複數個輸入/輸 出接腳自該積體電路中的一記憶陣列輸出與第一讀取位 址相關的資料。此方法包含進行一增強讀取操作,根據效 ^增強指示相關的資訊決定是否即將進行此增強讀取操 在本方法的一實施例中,此增強資料讀取方法包含接 ,一第二複數個位址段落,每一第二複數個位址段 其對應的複數個輸入/輸出接腳同時接收。此方法包人 少根據與第二複數個健段落相_f訊 = 法包含接收—第二效能增強指示,且ίΪ ^用複數個輸人/輸出接腳自該積體電路中的― 、 輪出與第二讀取位址相關的資料。在—特^f列 此方法也包含至少根據與此第二效能強關, :,,衫㈣進行—第二増強讀;巧 在一實施例中,決定一增強讀取操作是否 /, 比較第-效能增強指示的一第一位元與一第二位:。包含 在本方法的一實施例中,此積體電路包含一 (ΐ二面?腳:排組態,其包含第-接腳是晶?選: (叫第二接腳是資料輸出(_〇1)、第三接腳是^ 25 200933377 保護(WP#/SI02)、第四接腳是接地(GND)、第五接腳是資 料輸入(si/sioo)、第六接腳是序列時脈(SCLK)、第七接 腳是保留(H0LD#/SI03)以及第八接腳是供應電壓 (VCC)。在-特定實施例中,此第—讀取命令包含一讀取 命令。在-實施例中,此第_複數個位址段落在六個時 脈週期内接收。在-實施例中,此第—效能增強指示包 含四個指示位元P4、P5、P6和p7在第—㈣指示時脈 週期接收,而另四個指示位元p〇、n、p2*p 〇 ίο 15 ❹ 20 二增強指示時脈週期接收。在每—第__時脈週期所接收 的指示位元會與在第二時脈週期所接㈣指示位元對應 之-進行比較。在-特定實施例中,會決定即將二 增強讀取操作’假如下列條件成立 且(P5汗 1)且(P4#P0)。 V Ψ Z) 根據另-實施例’本發明提供 2資料之方法。此方法包含:接收一第中 資料加此心 二二第:讀取位址與積體電路中的記憶 陣列之第頁面相關。方法包含接收 不’且根據與此第-效能增強指示相關的資气二?2 即將進行-增強讀取操作。此方法也包含 =決定即將進行此増強讀取操作的話,曰以= 數個位址段落;方法包含接收第二複 母弟一後數個位址段落自其對應的複 11 25 200933377 數個輸入/輸出接腳同時接收。至少根據與第一及 數個位址段落相關的資訊’產生第二讀取位址。 包^接收—第二效能增強指示,且同時使用該複數個榦 入/輸出接腳自該積體電路中輸出㈣,該資料*」 讀取位址相關。在-實施例中,此第二讀取位址‘積; 電路中記憶陣列的第—頁面相關。此方法也包含 據;=5=指示相關的資料,決定是否即將進行 10 15 _ 20 在本方法的一特定實施例中,此積體電路包含一 列周邊介面接腳安排組態,其包含第—接腳是晶 (cs#)、第二接腳是資料輸出(SO/SI01)、第三接腳是耷 保護(WP#/SI02)、第四接腳是接地(GND)、第五 ^ 料輸入(S觀〇〇)、第六接腳是序列時脈(sc ^二According to another alternative embodiment, the present invention provides a method of reading data from an integrated circuit. The method includes receiving a first read command associated with an enhanced data read and processing information related to the first read command. The method includes receiving a first plurality of address segments, each of the plurality of address segments being simultaneously received from a plurality of input/output pins of the same. The method includes generating a first read address based on at least information associated with the first plurality of address segments. The method also includes receiving a first performance enhancement indication and determining whether an enhanced read operation is about to be performed based on information associated with the first performance enhancement indication. The method includes simultaneously outputting data related to the first read address from a memory array in the integrated circuit using a plurality of input/output pins. The method includes performing an enhanced read operation, and determining, according to the information related to the enhancement indication, whether the enhanced read operation is about to be performed. In an embodiment of the method, the enhanced data reading method includes: connecting a second plurality The address segment, each of the second plurality of address segments, is correspondingly received by a plurality of corresponding input/output pins. The method is based on the fact that the second plurality of health segments are included in the second plurality of health segments, and the second performance enhancement indication is included, and the plurality of input/output pins are used from the "wheel" in the integrated circuit. Data related to the second read address. In the method, the method also includes at least according to the second performance, :,, the shirt (four) - the second bare reading; in an embodiment, determining whether to enhance the read operation /, compare the first - A first bit and a second bit of the performance enhancement indication: In an embodiment of the method, the integrated circuit includes a (two-sided pin: row configuration, which includes the first pin is a crystal selection: (the second pin is a data output (_〇) 1), the third pin is ^ 25 200933377 protection (WP#/SI02), the fourth pin is ground (GND), the fifth pin is data input (si/sioo), and the sixth pin is sequence clock (SCLK), the seventh pin is reserved (H0LD#/SI03) and the eighth pin is the supply voltage (VCC). In a particular embodiment, the first read command includes a read command. In the example, the first plurality of address segments are received in six clock cycles. In the embodiment, the first performance enhancement indication includes four indicator bits P4, P5, P6, and p7 in the first (fourth) indication. The clock cycle is received, and the other four indicator bits p〇, n, p2*p 〇ίο 15 ❹ 20 two enhancements indicate clock cycle reception. The indicator bits received in each____ clock cycle will be In the second clock cycle, the (four) indicator bit corresponds to - for comparison. In the particular embodiment, it will be decided that the second enhanced read operation will be 'if the following conditions are true and (P5 Khan) 1) and (P4#P0). V Ψ Z) According to another embodiment, the present invention provides a method of 2 data. The method includes: receiving a middle data plus the heart two: reading the address and the integrated body The first page of the memory array in the circuit is related. The method includes receiving and not performing the enhanced read operation associated with the first-performance enhancement indication. This method also includes = deciding that this barely read is about to be performed. To take the operation, 曰 to = a number of address paragraphs; the method includes receiving the second plurality of parents and a number of address paragraphs from their corresponding complex 11 25 200933377 several input / output pins simultaneously received. At least according to The information related to one or several address segments 'generates a second read address. The packet receives the second performance enhancement indication, and simultaneously outputs the plurality of dry/output pins from the integrated circuit (4), The data *" reads the address correlation. In the embodiment, the second read address 'product; the first page of the memory array in the circuit is associated. This method also contains the data; = 5 = indicates the relevant data, Decide whether or not to proceed 10 15 _ 20 in one of the methods In a specific embodiment, the integrated circuit includes a column of peripheral interface pin arrangement configurations, wherein the first pin is a crystal (cs#), the second pin is a data output (SO/SI01), and the third pin is耷 protection (WP#/SI02), the fourth pin is ground (GND), the fifth input (S 〇〇 〇〇), the sixth pin is the sequence clock (sc ^ two)

腳是保留(H0LD#/SI03)以及第八接腳是供應電J (VCC)。在-實施例中,此第—讀取命令包含對增 讀取的-讀取命令。在—特定實施例中,此記憶陣列中 的頁面包含η個位元組(舉例而言:n=256)。在一實施例 :,第一複數個位址段落在m個時脈週期内接收(舉例而 言:m=2)。 根據另-替代實施例,本發明提供一種增強資料讀取 之系統。此系統包含一個或多個元件組態為: 1·接收第-讀取命令,其與一增強資料讀取相關; 2. 處理與第一讀取命令相關的資訊; 3. 接收一第一複數個位址段落,每一第—複數個位址段 落自其對應的複數個輸入/輸出接腳同時接收; 12 25 200933377 ❹ 15 ❹ 20 第1她嶋__訊,產生第 5. 接收-第—效能增強指示,且根 :湖的資訊決定是否即將進行 6. 同時使用複數個輸人/輸出接腳 憶陣列輸出與第—讀取位址相關的d中的記 1ί:強指示相關的資訊決定即將進行 此增強讀取操作的話,進行-增強讀取操作 在一實施例中,此系統包含—個 少-個與該第二效能增目關個H以根據至 含-個或多個元件以進行該增丄土= 元件進行下列功能: 保作舉例而言該些 1.接收-第二複數個位址段落,每 落自其對應的複數個輸入/輸出接位酿 2· 複數個位址段落相關的資訊,產生第 3. ,收-第二效能增強指示絲據與此第二效能增強 指示相關的資訊決定是否即將 _ 操作;以及 疋疋否即將進仃一第二增強讀取 4. 同時丨用該複數個輸入/輸出接腳 ^記憶陣列輸出資料,該資料與該第二讀取位址相 7. 13 200933377 在特定實施例中,此系統包含一積體電路其包含一 序,,邊介面接腳安排組態,此接腳安排組態包含第一接 ,疋日日片選擇(CS#)、第二接腳是資料輸出(so/sioi)、第 ^接腳是寫入保護(WP#/SI02)、第四接腳是接地(GND)、 腳是資料輸入(SI細〇)、第六接腳是序列時脈 ^ :第七接腳是保留(H〇LD#/SI〇3)以及第八接腳是 ;i、ii(vcc)。在—實施射,此第—複數個位址段落 /、固時脈週期内接收。在一實施例中,此 〇 10 15 20The pin is reserved (H0LD#/SI03) and the eighth pin is the supply J (VCC). In an embodiment, the first read command includes a read-read command. In a particular embodiment, the pages in this memory array contain n bytes (e.g., n = 256). In an embodiment: the first plurality of address segments are received during m clock cycles (for example: m = 2). According to another alternative embodiment, the present invention provides a system for enhancing data reading. The system includes one or more components configured to: 1. receive a read-read command associated with an enhanced data read; 2. process information related to the first read command; 3. receive a first complex number Each address segment, each first-plural address segment is received simultaneously from its corresponding plurality of input/output pins; 12 25 200933377 ❹ 15 ❹ 20 1st her __ message, yielding 5. Receive - - Performance enhancement indication, and root: Lake information determines whether it is about to be performed. 6. Simultaneous use of multiple input/output pins to recall the output of the array in relation to the first read address. Determining that the enhanced read operation is about to be performed, the enhanced-read operation is performed in an embodiment in which the system includes - a small number and a second performance increase H to be based on the one or more components To perform the following functions: The component performs the following functions: For example, the 1. receive-second multiple address segments, each falling from its corresponding multiple input/output contacts, 2, multiple bits Information related to the address paragraph, resulting in the third, the second-effect The enhanced indicator determines whether or not the operation is to be performed according to the information related to the second performance enhancement indication; and whether the second enhancement read is to be performed. 4. The plurality of input/output pins are simultaneously used. Data, the data is related to the second read address. 7. 13 200933377 In a specific embodiment, the system includes an integrated circuit including a sequence, the interface configuration of the interface, the configuration of the pin arrangement The first connection is included, the next day chip selection (CS#), the second pin is the data output (so/sioi), the second pin is the write protection (WP#/SI02), and the fourth pin is the ground ( GND), the foot is the data input (SI fine), the sixth pin is the sequence clock ^: the seventh pin is reserved (H〇LD#/SI〇3) and the eighth pin is; i, ii ( Vcc). In the implementation of the shot, this first - plural address paragraph /, solid clock cycle received. In an embodiment, this 〇 10 15 20

=含r指示位元p4、p5、p6和p7在第-增強= 時脈週期接收,而另四個指示位元P0、PI、P2和P3則在 第一增強指示時脈週期接收,且會決定即將進行一增強讀 取操作,假如下列條件成立:(P7#P3)且(P私p S 且(P4#P0)。 ) 相較於傳統的方式,藉由本發明可以達成許多好 ^。舉例1言’在-實施例中,本發明可以被應用於傳統 的序列週邊介面接腳安排而提供一簡易的使用方法。在本 發明的某些實施例中,可以提升資料及位址的傳送速 ^。而在^實_中’本發明可以提供高速及隨機的讀 取操作。在一特定實施例中,本發明提供一頁面讀取方法 不^ 歡餘錄元的情訂進行資料的隨 達J二此例,本發明的一個或多個特徵可⑽ ΐ成ΓΓιΙ 特徵將會在本發㈣明書巾被具體的描 述,特別疋在以下的敘述中。 本發=之其他特徵、目的及優點等將可透過下列所 寸圖式、發明詳細說明及中請專利範圍獲得充分瞭解。 25 200933377 【實施方式】= with r indicating that bits p4, p5, p6 and p7 are received in the first-enhanced = clock cycle, while the other four indicating bits P0, PI, P2 and P3 are received in the first enhanced indication clock cycle, and It is decided that an enhanced read operation is to be performed if the following conditions are true: (P7#P3) and (P private p S and (P4#P0).) Many advantages can be achieved by the present invention compared to the conventional method. By way of example, the present invention can be applied to conventional serial peripheral interface pin arrangements to provide an easy to use method. In some embodiments of the invention, the data and address transfer speeds can be increased. In the present invention, the present invention can provide high speed and random read operations. In a specific embodiment, the present invention provides a page reading method that does not allow for the recording of the data. The one or more features of the present invention can be (10) The book towel (4) is specifically described in the following description, particularly in the following description. Other features, objects, and advantages of the present invention will be fully understood by the following drawings, the detailed description of the invention, and the scope of the patent application. 25 200933377 [Embodiment]

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20 本發明係有關於積體電路及其操作。特別是 包含S己憶TG件的積體電路巾用於增強讀取效能周 邊介面協定之方法與系統。而其中_例為本發明可= 應用於搭配使用-相周邊介面協定之序列記憶 , 以達成快速負料傳送速率。然而必須理解的是本 具有較為寬廣的應用範圍。舉例而言,本發明可以 在其他單獨或是嵌入式的記憶元件如動態隨機存取 憶體、靜態隨機存取記憶體、平行快閃記憶體或 他非揮發記憶體。本發明亦可以應用於一序列周乂 面以用來進行電子元件之間的通訊。 ” 取決於實施例,本發明包含許多可以被使用的 的特徵。這些特徵包含下列: 120 The present invention relates to an integrated circuit and its operation. In particular, a method and system for integrating a peripheral interface of a read performance for an integrated circuit tape comprising a sigma TG component. Wherein, the _ example is the invention can be applied to the sequence memory of the phase-to-edge interface agreement to achieve a fast negative transfer rate. However, it must be understood that this has a wide range of applications. For example, the present invention can be implemented in other separate or embedded memory elements such as dynamic random access memory, static random access memory, parallel flash memory or other non-volatile memory. The invention can also be applied to a sequence of peripheral surfaces for communication between electronic components. Depending on the embodiment, the invention encompasses many features that can be used. These features include the following: 1

*使用傳統的序列周邊介面接腳安排可以達到較言 資料傳送率。 W *僅需使用一個讀取命令就可以進行多重隨機讀 作。以及 保 *僅需使用一個讀取命令和部分位址資訊就可以在同 一頁資料中進行多重隨機讀取操作。 如同以上所描述的,上述的特徵可以應用在—個或 多個的實施例中。這些特徵僅是範例之用,並不是用來 限制本發明的申請專利範圍。對於熟習本技藝者而言, 可輕易地達成各種的變異、修改與結合。 第1圖為根據本發明實施例之一具有序列周邊介面 15 200933377 出的簡易接腳安排組態示意圖。 專利乾圍。對於熟習本技藝者而言 的變異、修改與結合。如圖所示,根據本 例’此積體電路7L件包含以下的信號:第 選擇(CS#)、第二接腳是資料輸出(SQ) 保護〇m)、第四接腳是接地(GND)、第 入(DI)、第六接腳是序列時脈(SCLK)、 、= 〇 ίο 15 20 (Η〇_以及第八接腳是供應電壓(vcc)。在 中,第二接腳被安排為S0/SI01、第三接腳被安 ==102、第五接腳被安排為_〇〇, ^ 女排為狐臓103。在以下的描述中,這些輸 =* Use the traditional sequence peripheral interface pin arrangement to achieve a higher data transfer rate. W * allows multiple random reads with a single read command. And the guarantee * can use multiple read commands and partial address information to perform multiple random read operations on the same page. As described above, the features described above can be applied to one or more embodiments. These features are for illustrative purposes only and are not intended to limit the scope of the invention. Various variations, modifications, and combinations can be readily achieved by those skilled in the art. 1 is a schematic diagram of a simple pin arrangement configuration with a sequence peripheral interface 15 200933377 according to an embodiment of the present invention. Patented dry circumference. Variations, modifications, and combinations for those skilled in the art. As shown in the figure, according to this example, the integrated circuit 7L includes the following signals: the first selection (CS#), the second pin is the data output (SQ) protection 〇m), and the fourth pin is grounded (GND). ), the first input (DI), the sixth pin is the sequence clock (SCLK), , = 〇ίο 15 20 (Η〇_ and the eighth pin is the supply voltage (vcc). In the middle, the second pin is Arranged as S0/SI01, the third pin is secured == 102, the fifth pin is arranged as _〇〇, ^ the women's volleyball is 臓 103. In the following description, these loses =

:根據不同的實施例之多種方法中被用“遞位址和J 第2圖為根據本發明實施例之一具有記憶元 ,電路的簡易方塊示意圖。此圖示僅是範例之用並不 是用來限制本發明的中請專利範圍。對於熟習本技藝者 而言,可輕易地達成各種的變異、修改與結合。如^所 示,積體電路元件200包括許多輸入區塊耦接至其各自 的輸入輸出接腳。在一特定的實施例中,此積體電路元 件包含符合序列周邊介面接腳安排的輸入輸出接腳。舉 例而言,元件200可以包括與下列輸入/輸出電路區 接的輸入輸出接腳。 SI/SIOO接腳耦接至SI/SIOO區塊211 ; S0/SI01接腳柄接至SO/SIOI區塊212 ; WP#/SI02接腳耦接至WP#/ACC區塊213 ; 16 25 200933377 H0LD#/SI03接腳耦接至HOLD#區塊214 ; CS#接腳耦接至CS#區塊215 ; SCLK_接腳耦接至SCLK區塊216。 如第2圖所示,元件200也包括與此記憶陣列230 5 相關的下列電路區塊。 記憶陣列230, ❿ X解碼器231, 頁面緩衝器232, Y解碼器233, 1〇 感應放大器234,以及 輸出緩衝器236。 元件200也包括下列控制與支援電路區塊。 位址產生器221, ❹ 資料暫存器222, 15 靜態隨機存取記憶體緩衝器223, 模式邏輯224, 時脈產生器225, 狀態機構226,以及 高電壓產生器227。 20 僅是作為例示之用,根據本發明一特定實施例來討 論元件200的某些操作。在終端216的系統時脈信號 17 200933377 5 ❹10 ❹ 20 SCLK與時脈產生器225耦接,其又會與模式邏輯 麵接。模式邏輯224在操作上會麵接以接收在㈣輸入 終端的晶片選擇信號。命令或是指令可以經由輸入 SI/fI〇〇區塊211來輸入,且然後傳遞到資料暫存器222 ,模式邏輯故。模式邏輯224與狀態機構226搭配使用 來解碼並執行此命令,例如讀取、抹除或是程式化操作。 在一實巧例中,模式邏輯224也自wp#/SI〇2區塊2n ,收仏號以執行一寫入保護功能,且自恥乙而幻⑺ ,塊214接收-信號以阻止—時脈信號進人狀態機構 根據一特定實施例,資料可以經由SI/SI〇〇區塊 211、S0/SI01 區塊 212、WP#/SI〇2 區塊 213 及 !1〇1^#細3 ^塊214輸人,其係與#料暫存器222耦 。資料暫存器222與靜態隨機存取記憶體緩衝器223 耦接以暫時儲存。資料可以經由SI/SI〇〇區塊2U、 S0/SI01 區塊 212、WP#/SI〇2 區塊 213 及 h〇ld#/si〇3 區塊214輸出,其係與輸出緩衝器236耦接。一個 對應於記憶陣列230中的一位置可以自資料暫存器222 提供至位址產生器221。此位址然後由χ解碼器23°丨 解碼器233進行解碼。頁面緩衝器232輕接 230以提供記憶操作的暫時儲存。* —讀取#_ 料自記憶陣列230經由感應放大器234傳 二 器236。而在一寫入操作中,此資料自資料暫存 由頁面緩衝器232後傳送至記憶陣列23〇。對於^ ^ 作,例如一寫入操作,高電壓產生器227被啟動。’、 雖然,上述的描述中積體電路元件係使用— 組的零件構成,但是當然也可以有其他各種的變異、修 18 25 200933377 改與詰合。舉例而言,某 也可以加人其他的零件。、可以被擴充或是結合。 排也#被交換或是抑_實_料同’零件的安 娜明書,及更明::是^=的細㈣ 簡易i程圖圖為施例之增強資継 發明的申請專利範圍。之用,並不是用來限制本 地達成各種的變異、修^鱼2本技藝者而言,可輕j 料讀取方法可以簡單的歸納如圖所示’此增強資 1. (步驟31〇)接收一第_讀取命令; 2. (肩32G)處理與第—讀取命令相關的資訊; 3. (步驟330)接收—第—複數個位址段落; m 15 ❹ 20 25 否即將進行—增作第—效能增強指示,且決定是 數,6之後:時=期,其中n是-個整 積體電路中的一记憶陣列輪出資料;以及 進行7一增取:進行-增強讀取操作,假如決定即將 資料系一種根據本發明實施例之增強 複數個接腳:傳= = = ”同時使用 代方法也可以被提供,其中加入其 200933377 ί :抱Ϊΐί供一個流程中-個或多個順序被改 良’而不會偏離本發_申料魏圍之腳。本方法 2的細節可以參閱說明書’及更明確的是參考以下 的救述。 15 ❹ 20 第4A* 4B ®為根據本發明一實施例之一積體電路 中〜強資料讀取方法的簡易時序圖。此圖示僅是範例之 ,,並不是絲限制本發_巾料利範圍。對於孰習 本技藝者而言,可輕易地達成各種的變異、修改與結合。 現在會搭配第3圖的簡易流程圖以及第从和犯圖 易時序圖來說關時使用四個輸人輸出接腳之此增強士 料讀取方法。在-特定範例巾’—個75MHz的時脈被使 用。在其他的實施财,時脈速率可以根據不同的應用 而調整。如圖所示,晶片選擇(⑽)信號被設置為低準 位。在步驟310 ’ 一個8位元指令,設計為32(16進位) 使用si/sioo接腳來傳送。在步驟32〇,此方法包含處理 與第一讀取命令相關的資訊。請參閱第2圖,此命令被 傳送至模式邏輯224而被解碼,而狀態機構226被啟動 以準備與此增強讀取命令相關的進一步資料。在步驟 330,一個 24 位元位址 A0、、、A23,使用 SI/SIOO、 SO/SICM、WP#/SI02 和 H0LD#/SI03 接腳來接收。每一 個接腳,收一系列的位址位元,其被指派為位址段落。A method of using a "receiving address and J" according to a different embodiment is a simple block diagram of a circuit having a memory element according to one embodiment of the present invention. This illustration is for example only and is not used. To limit the scope of the claimed invention, various variations, modifications, and combinations can be readily made by those skilled in the art. As shown, the integrated circuit component 200 includes a plurality of input blocks coupled to their respective Input and output pins. In a particular embodiment, the integrated circuit component includes input and output pins that conform to a sequence of peripheral interface pins. For example, component 200 can include intervening with the following input/output circuits. Input/output pin: SI/SIOO pin is coupled to SI/SIOO block 211; S0/SI01 pin is connected to SO/SIOI block 212; WP#/SI02 pin is coupled to WP#/ACC block 213; 16 25 200933377 H0LD#/SI03 pin is coupled to HOLD# block 214; CS# pin is coupled to CS# block 215; SCLK_ pin is coupled to SCLK block 216. As shown in Figure 2 The component 200 also includes the following circuit blocks associated with the memory array 230 5 . 230, ❿X decoder 231, page buffer 232, Y decoder 233, 1 〇 sense amplifier 234, and output buffer 236. Element 200 also includes the following control and support circuit blocks. Address generator 221, ❹ data Register 222, 15 SRAM buffer 223, mode logic 224, clock generator 225, state mechanism 226, and high voltage generator 227. 20 is for illustrative purposes only, and is specific to the present invention. The embodiment discusses some of the operations of component 200. The system clock signal 17 200933377 5 ❹ 10 ❹ 20 SCLK at terminal 216 is coupled to clock generator 225, which in turn is interfaced with the mode logic. Mode logic 224 is operationally The meeting is connected to receive the wafer selection signal at the (IV) input terminal. The command or instruction can be input via the input SI/fI block 211 and then passed to the data register 222, mode logic. Mode logic 224 The state mechanism 226 is used in conjunction with decoding and executing the command, such as reading, erasing, or stylizing operations. In a practical example, the mode logic 224 is also received from the wp#/SI〇2 block 2n. To perform a write protection function, and self-discipline (7), block 214 receives a signal to prevent the clock signal from entering the state mechanism. According to a particular embodiment, the data may be via the SI/SI block 211, S0. The /SI01 block 212, the WP#/SI〇2 block 213, and the !1〇1^#3 3 block 214 are input, which are coupled to the #料存器 222. The data register 222 is coupled to the SRAM buffer 223 for temporary storage. The data may be output via SI/SI block 2U, S0/SI01 block 212, WP#/SI〇2 block 213, and h〇ld#/si〇3 block 214, which are coupled to output buffer 236. Pick up. A location corresponding to one of the memory arrays 230 can be provided from the data register 222 to the address generator 221. This address is then decoded by the χ decoder 23° 解码 decoder 233. Page buffer 232 is lightly coupled 230 to provide temporary storage of memory operations. * - Read #_ is passed from the memory array 230 via the sense amplifier 234 to the second 236. In a write operation, the data is transferred from the page buffer 232 to the memory array 23 from the data buffer. For a write operation, such as a write operation, the high voltage generator 227 is activated. </ RTI> Although, in the above description, the integrated circuit components are constructed using the components of the group, but of course, various other variations and modifications may be made. For example, you can add other parts. Can be expanded or combined.排也# is exchanged or _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ It is not used to limit the local variation of various kinds of fish, and the skill of the fish is 2. For those skilled in the art, the method of reading can be easily summarized as shown in the figure below. [Step 31〇) Receiving a _read command; 2. (shoulder 32G) processing the information related to the first read command; 3. (step 330) receiving - the first plurality of address segments; m 15 ❹ 20 25 No upcoming - Added as a first-performance enhancement indicator, and the decision is a number, after 6: hour = period, where n is a memory array in the entire integrated circuit circuit; and 7 is added: enhanced-read Taking the operation, if it is decided that the data is an enhanced plurality of pins according to an embodiment of the present invention: pass = = = " and the use of the generation method can also be provided, which is added to its 200933377 ί: Ϊΐ Ϊΐ for a process - or Multiple sequences have been modified' without deviating from the foot of this issue. The details of this method 2 can be found in the description 'and more specifically refer to the following remedies. 15 ❹ 20 4A* 4B ® based Method for reading data in integrated circuit in one embodiment of the present invention Simple timing diagram. This illustration is only an example. It is not a limitation on the scope of this hair. For those who are skilled in the art, various variations, modifications and combinations can be easily achieved. The simple flow chart of Figure 3 and the use of the four input output pins for the enhanced slave reading method are used in the case of the -specific sample towel. A 75 MHz clock is used. In other implementations, the clock rate can be adjusted for different applications. As shown, the wafer selection ((10)) signal is set to a low level. At step 310 an 8-bit instruction is designed to be 32 ( 16-bit) is transmitted using the si/sioo pin. In step 32, the method includes processing information related to the first read command. Referring to Figure 2, the command is transmitted to the mode logic 224 and decoded. State mechanism 226 is activated to prepare further material associated with this enhanced read command. At step 330, a 24-bit address A0, ,, A23, using SI/SIOO, SO/SICM, WP#/SI02, and H0LD# /SI03 pin to receive. Each pin A series of received address bits, which address is assigned to a paragraph.

在一特定的實施例中,此24位元位址在時脈信號SCLK 的✓、個時脈週期接收。此位址傳送的時序會在以下的表1 中顯示。 20 25 200933377 表1 位址時脈週期 I/O接腳 _ 1 2 3 4 5 6 SI/SIOO A20 A16 A12 A8 A4 A0 SO/SIOl A21 A17 A13 A9 A5 Al WP#/SI02 A22 A18 A14 A10 A6 A2 H0LD#/SI03 A23 A19 A15 All A7 A3 ❹ 舉例而言,在第一位址時脈週期,SI/SIO〇接收位址 位元A20,S0/SI01接收位址位元A21,WP#/SI02接收 5 位址位元A22,HOLD#/SI〇3接收位址位元A23。依序 ❹ 地,在第二位址時脈週期同時接收位址位元A16、A17、 A18和A19,在第三位址時脈週期同時接收位址位元 A12、A13、A14和A15,在第四位址時脈週期同時接收 位址位元A8、A9、A10和All ’在第五位址時脈週期同 10 時接收位址位元A4、A5、A6和A7,而在第六位址時脈 週期同時接收位址位元AO、Al、A2和A3。 請參閱第2圖,在一實施例中,第一段落的位址位 元 A20、A16、A12、A8、A4 和 A0 使用 SI/SIOO 接腳接 收’且自SI/SIOO區塊211傳送至資料暫存器222。第_ 15 段落的位址位元A21、A17、A13、A9、A5&quot;和A1使^ 200933377 S0/SI01接腳接收,且自S0/SI01區塊212傳送至資料 暫存器222。第三段落的位址位元A22、A18、A14、A10、 A6和A2使用WP#/SI02接腳接收,且自WP#區塊213 傳送至資料暫存器222。第四段落的位址位元A23、A19、 A15、All、A7和A3使用H0LD#/SI03接腳接收,且自 HOLD#區塊214傳送至資料暫存器222。在步驟340,此 位址段落傳送至位址產生器區塊221,其中此位址段落的 位址位元彙編成一讀取位址’例如,A24、A23、、A1、 A0。In a particular embodiment, the 24-bit address is received during the ✓ clock cycle of the clock signal SCLK. The timing of this address transfer is shown in Table 1 below. 20 25 200933377 Table 1 Address Clock Cycle I/O Pin _ 1 2 3 4 5 6 SI/SIOO A20 A16 A12 A8 A4 A0 SO/SIO1 A21 A17 A13 A9 A5 Al WP#/SI02 A22 A18 A14 A10 A6 A2 H0LD#/SI03 A23 A19 A15 All A7 A3 ❹ For example, in the first address clock cycle, SI/SIO receives the address bit A20, S0/SI01 receives the address bit A21, WP#/SI02 receives The 5 address bit A22, HOLD#/SI〇3 receives the address bit A23. In sequence, the address bits A16, A17, A18, and A19 are simultaneously received in the second address clock cycle, and the address bits A12, A13, A14, and A15 are simultaneously received in the third address clock cycle. The fourth address clock cycle simultaneously receives the address bits A8, A9, A10, and All. When the fifth address clock cycle is the same as 10, the address bits A4, A5, A6, and A7 are received, and in the sixth bit. The address clock cycle simultaneously receives the address bits AO, A1, A2, and A3. Referring to FIG. 2, in an embodiment, the address bits A20, A16, A12, A8, A4, and A0 of the first paragraph are received using the SI/SIOO pin and transmitted from the SI/SIOO block 211 to the data. The memory 222. The address bits A21, A17, A13, A9, A5&quot; and A1 of the _15th paragraph enable the ^200933377 S0/SI01 pin to be received and transferred from the S0/SI01 block 212 to the data register 222. The address bits A22, A18, A14, A10, A6 and A2 of the third paragraph are received using the WP#/SI02 pin and transmitted from the WP# block 213 to the data register 222. The address bits A23, A19, A15, All, A7 and A3 of the fourth paragraph are received using the HOLD#/SI03 pin and are transferred from the HOLD# block 214 to the data register 222. In step 340, the address segment is passed to address generator block 221, where the address bits of the address segment are assembled into a read address 'e.g., A24, A23, A1, A0.

15 ❹ 20 、印直新參閱第4A圖,在時脈信號SCLK的下兩個時 脈週期,此方法接收-第—效能猶指示(步驟35〇)。在 2定的實施例中,此第—效能增強指示包括8個位元, 至1 Η:其係使用四個輸入/輸出接腳接收。舉 例而言’四個指示位元⑷…叫心在第一 ,脈週期接收’而另四個指示位元p〇、…; 則在^二增強指示時脈週期接收。在步驟% 強指示根據至少與此效能增強指 ^ 個指示位元之-會與在第二 &gt; =射所接收的四 四個指示位元對應之-進行:較所接收的 即將進行-增_取操作,假,會決定 且㈣Ρ2)且(Ρ柳)且0&gt;4剑)。^ (Ρ7· 異或是修改。 田…、可以有其他的變 在一實施例中,此方法包含 中η是-铺數以觀適合、^目時脈週期,其 施例中,此料柯叹8個日=在-特定的實 巧J。在步驟360, 22 25 200933377 此方法包含存取記輯列謂贿取財 生的第-讀取位址相_資料。此方法亦 出自該積體電路中的記憶陣列輪出此=取 的貝#如第4A圖中所不,一位元組的資 =、週= 皮傳送’例如’在第—資料時脈週二 而在第,資料時脈週期傳送資料: ί 實施射H取操作或根據應用的 需求輸出特疋數目的位元組。舉例而言,在一讀取操 ❹10 1515 ❹ 20, Print New See Figure 4A. In the next two clock cycles of the clock signal SCLK, this method receives the -first performance indication (step 35〇). In the second embodiment, the first performance enhancement indication includes 8 bits, up to 1 Η: it is received using four input/output pins. For example, 'four indicator bits (4)... call center first, pulse period reception' and the other four indicator bits p〇, ...; then receive the clock cycle reception. In step %, the strong indication is performed according to at least the performance indicator of the performance indicator, which corresponds to the four indicator bits received in the second &gt; = shot: compared to the received upcoming-increment _ take operation, false, will decide and (4) Ρ 2) and (Ρ柳) and 0 gt; 4 sword). ^ (Ρ7· XOR or modification. Tian..., there may be other changes in an embodiment, this method contains η is - the number of the shop to see the appropriate, the clock cycle, in the example, this material Sigh 8 days = in - specific real J. In step 360, 22 25 200933377 This method contains access to the record column to refer to the first-read address phase data of the wealthy. This method also comes from the product. The memory array in the body circuit rotates this = take the Bay # as shown in Figure 4A, the one-tuple's capital =, week = the skin transmission 'for example' in the first - data clock on the second, in the data The clock cycle transmits data: ί performs a H-fetch operation or outputs a special number of bytes according to the needs of the application. For example, in a read operation 10 15

20 中所傳送的位元組數目可以是一位元組、二位元組戋θ 四位元組等。 、-疋 在步驟370,假如根據與此效能增強指示相關的資料 決定即將進行一增強讀取操作的話,則進行一增強讀取 操作。在此增強讀取的一實施例中,不需要一^新的讀 取命令就可以進行一資料讀取。此處,第二讀取位址的 位址段落被接收,且一第二讀取位址被形成以選取一第 二記憶位置。在一特定的實施例中,此増強資料讀取方法 包含下列步驟: / 1. (步驟510)接收一第二位址; 2. (步驟520)接收一第二效能增強指示; 3. (步驟530)等待η個時脈週期,其中η是一個整 數’之後同時使用複數個輸入/輸出接腳自該積體電路中 的記憶陣列輸出資料; 4. (步驟540)至少根據與此第二效能增強指示相關 的資料’決定是否即將進行一第二增強讀取操作。 在步驟510,一個第二位址自對應的複數個輸入/輸 出接腳接收。舉例而言,同時使用四個輸入/輸出接腳來 23 25 200933377 接收位元位址A23-A0。此第二位址由A23-A0組成,所 以其係獨立於弟一位址。此第一位址和第二位址可以位 於不同的頁面之中。 15 ❹ 20 f步驟520,接收一第二效能增強指示。如第4B圖 ^所示,同時使用四個輸入/輸出接腳來接收效能增強指 示位元’如同之前所描述過的。 h在步驟53〇,此方法包含等待η個時脈週期,其中n 個整數,之後同時使用複數個輸入/輸出接腳自該積 ,電路中的記憶陣列輸出資料。此資料與第二讀取位址 ^關。如第4B圖中所示,資料位元D7_D〇分別在兩個 呀脈週期中同時使用四個輸入/輸出接腳來輸出。 ,步驟540,此方法包含根據至少與此第二效能增強 二I?的資訊’來決定是否即將進行-第二增強讀取 員似於之前所描述的,效能增強指示位元P7-P〇 條且會蚊即將進行—增強讀取操作,假如下列 (P#P3)且(P研2)且(P5泮D且(P4卿)。在一 會持Hit::'要是效能增強指稀設置’此增強讀取就 效能前賴述的實補’此增賴”法會依照 «強私不的需求而持續地進行。因此,一個單一 多重隨機資料讀取操作。相反地,傳統技術 Π 傳統技術必須對每一資料讀取操作皆收-命 、σ以解碼,導致更多的系統運作管理時間。 個記憶陣列經排被安排為頁 &amp;某些積體電路 j 一丨一 24 25 200933377 面。在一例子中,一頁面包括256位元組。在其他的例 子中,一頁面可以包括512,1K或是4K位元組等。在 某些應用中,或許希望在一記憶陣列同一頁面的不同記 憶位置進行多重讀取操作。根據本發明的另一實施例, 5 —種不需要重複讀取命令或是重複複製位址資訊就可以 在一記憶陣列同一頁面的不同記憶位置進行多重讀取操 作的方法被提供。更多實施例的細節會在以下描述。 第6A和6B圖為根據本發明一實施例之一積體電路 中增強資料讀取方法的簡易時序圖。此圖示僅是範例之 10 用,並不是用來限制本發明的申請專利範圍。對於熟習 本技藝者而言,可輕易地達成各種的變異、修改與結合。 此增強頁面讀取方法包含在一記憶陣列同一頁面的多重 資料讀取操作。此增強頁面讀取方法包含下列步驟: 1. 接收一第一讀取命令; 15The number of bytes transmitted in 20 can be one-tuple, two-tuple 戋θ, four-bit, and the like. - 疋 In step 370, if an enhanced read operation is to be performed based on the data associated with the performance enhancement indication, an enhanced read operation is performed. In an embodiment of enhanced read, a data read can be performed without a new read command. Here, the address of the second read address is received, and a second read address is formed to select a second memory location. In a particular embodiment, the bare data reading method comprises the steps of: / 1. (step 510) receiving a second address; 2. (step 520) receiving a second performance enhancement indication; 3. (step 530) Waiting for n clock cycles, where η is an integer 'after simultaneously using a plurality of input/output pins to output data from the memory array in the integrated circuit; 4. (Step 540) based at least on the second performance Enhance the indication related information 'Deciding whether a second enhanced read operation is about to be performed. In step 510, a second address is received from a corresponding plurality of input/output pins. For example, four input/output pins are used simultaneously to receive the bit address A23-A0 23 25 200933377. This second address consists of A23-A0, so its department is independent of the address of the brother. This first address and the second address can be located on different pages. 15 ❹ 20 f. Step 520, receiving a second performance enhancement indication. As shown in Fig. 4B, four input/output pins are used simultaneously to receive the performance enhancement indicator bit' as previously described. h In step 53, the method includes waiting for n clock cycles, where n integers, followed by a plurality of input/output pins simultaneously outputting data from the memory array in the circuit. This data is off with the second read address. As shown in Fig. 4B, the data bit D7_D〇 is simultaneously output using four input/output pins in two pulse cycles. Step 540, the method includes determining whether to be performed according to at least the information of the second performance enhancement II. The second enhanced reader is similar to the previously described performance enhancement indicator bit P7-P. And the mosquito is about to proceed - enhance the reading operation, if the following (P#P3) and (P research 2) and (P5泮D and (P4 Qing). Hold Hit:: 'If the performance is enhanced, the thin setting' This enhanced reading is based on the fact that the actual complement of the "additional" method will continue in accordance with the demand of strong and private. Therefore, a single multiple random data reading operation. Conversely, the traditional technology Π traditional technology Each data reading operation must be decoded, and σ is decoded, resulting in more system operation management time. Memory arrays are arranged as pages &amp; some integrated circuits j 丨24 25 200933377 In one example, a page includes 256 bytes. In other examples, a page can include 512, 1K, or 4K bytes, etc. In some applications, it may be desirable to have the same page in a memory array. Multiple read operations at different memory locations. In another embodiment of the invention, a method for performing multiple read operations at different memory locations on the same page of a memory array without the need to repeat the read command or the repeated copy of the address information is provided. The details will be described below. Sections 6A and 6B are simplified timing diagrams of an enhanced data reading method in an integrated circuit according to an embodiment of the present invention. This illustration is only for the example 10 and is not intended to limit the present. The scope of the patent application of the invention is readily achievable by those skilled in the art to various variations, modifications, and combinations. The enhanced page reading method includes multiple data reading operations on the same page of a memory array. The method includes the following steps: 1. Receiving a first read command;

20 25 2. 處理與第一讀取命令相關的資訊; 3. 接收一第一複數個位址段落; 4. 至少根據與位址段落相關的資訊,產生第一讀取 位址; 5. 接收一第一效能增強指示,且決定是否即將進行 一增強讀取操作; 6. 等待η個時脈週期,其中η是一個整數,之後自 該積體電路中的一記憶陣列輸出資料;以及 7. 進行一增強讀取操作,假如決定即將進行一增強 讀取操作。 如上述描述,此增強頁面讀取方法與之前所描述的增 25 200933377 強讀取方法後類似。然而, 機記憶位置不同的是,此拇/、第3圖中的方法係讀取隨 列的特以面的記憶位面讀取方法包含在記憶陣 法會在以下進一走描述。進仃多重資料讀取操作。此方 而要進行一増圖二:::定即將進行-增強讀取操作 被形成以選取-第二記憶^ —第二讀取位址A7-A0 Ο 10 1520 25 2. processing the information related to the first read command; 3. receiving a first plurality of address segments; 4. generating the first read address based on at least information related to the address segment; 5. receiving a first performance enhancement indication and determining whether an enhanced read operation is to be performed; 6. waiting for n clock cycles, where n is an integer, and then outputting data from a memory array in the integrated circuit; and 7. An enhanced read operation is performed if it is decided that an enhanced read operation is to be performed. As described above, this enhanced page reading method is similar to the previously described enhanced reading method of 200933377. However, the difference in the memory location is that the method of reading the memory/face in the thumb/Fig. 3 is described in the following section. Enter multiple data read operations. In this case, a picture 2::: is about to be performed - an enhanced read operation is formed to select - a second memory ^ - a second read address A7-A0 Ο 10 15

20 關的第-記憶位址之相同=其在與第—讀取位址相 A23-A8被指定為不同的面中。在此實施例中,位元 相同頁面中的不同位元^而位元Α7·Α()則被指定為 頁面讀取方法包含下列步驟在—特定實施例中,此增強 1·接收一第二位址在第一頁面中; 2. 接收-第二效能增強指示; 3. 二個時脈週期,其中以-個整數’之後自 “積體電路巾的記憶㈣輸出資料 ;以及 4. ^根據與第二效能增強指示相關的資訊 ,決定 疋否即將進行-第二增強讀取操作。 /在第6Β圖中’接收第二複數個位址段落。每一個第 -複數個位址段落同時自每―個所對應的複數個輸入/輸 出接腳接收。舉例而言,在第6Β圖中,位址位元Α7_Α〇, 使用四個名為 SI/SIOO、SO/SIOI、WP#/SI02 和 H0LD#/SI03的輸入/輸出接腳來接收。在一特定的實施 例中,一頁面包括256位元組,其可以由一 8位元位址 於此頁面中定址。因此如第6B圖所示,此位址位元A7_A〇 被女排成每一個包含2位元的四個位址段落,如,A4和 AO、A5 和 Al、A6 和 A2 及 A7 和 A3。 26 25 200933377 ❹ 10 15 ❹ 20 至少根據與第二複數個位址段落與第一複數個頁面 位址段落表相關的資訊,產生_第二讀取位址。舉例而 言’在第6B圖中’使用由第一複數個頁面位址段落的位 址位TO A23-A8和由第二複數個位址段落的位址位元 A7]A0’產生一第二讀取位址。根據本發明一實施例中, 因為第二讀取位址指向與第一獨取位址相同頁面中的一 記憶位置,僅需要傳送第二讀取位址巾的人個位元。一 讀取命令和重複地位址位元A23_A8並 果是可以減少系統運作管理時間。 寻具… 接收一第二效能增強指示。如第6B圖中所示,同時 使用四,輸人/輸丨接腳分別在兩個時脈週射接收效能 增強指示位元P7_p〇,如同之前所描述過的。 此方法包含等待n個時脈週期,之後同時使用複數 個輸W輸出接腳自該積體電路中的記憶_輸出資料。 此等^時脈週期的數目η,可以視應用的需求而選取。舉 =而5 ’在—特^的實施例中,η彳以被狀為八個等待 時脈週期。此資料係與第二讀取位址相關。如第沾圖中 所示資料位元D7-D0分別在兩個時脈週期中同時使用 四個輸入/輸出接腳來輸出。 力甲&quot;子便用 次此^法包含根據至少與此第二效能增強指示相關的 二拗ίΐ定是否即將進行一第二增強讀取操作。此處 示位元Ρ7·Ρ〇被處理’且會進行-增強讀取The same is true for the 20th-first memory address = it is specified in a different face than the first-read address A23-A8. In this embodiment, the different bits in the same page of bits are located, and the bit Α7·Α() is specified as the page reading method. The method includes the following steps. In a specific embodiment, the enhancement 1 receives a second. The address is in the first page; 2. Receive - the second performance enhancement indication; 3. Two clock cycles, where - an integer is followed by "the memory of the integrated circuit (4) output data; and 4. ^ according to The information related to the second performance enhancement indication determines whether the next enhanced read operation is to be performed. / In the sixth diagram, 'receives the second plurality of address segments. Each of the first and plural address segments simultaneously Each of the corresponding multiple input/output pins is received. For example, in the sixth diagram, the address bits Α7_Α〇, using four names SI/SIOO, SO/SIOI, WP#/SI02, and H0LD The input/output pins of #/SI03 are received. In a particular embodiment, a page includes 256 bytes, which can be addressed by an 8-bit address in this page. Thus, as shown in Figure 6B This address bit A7_A is divided into four address segments each containing 2 bits. , A4 and AO, A5 and Al, A6 and A2 and A7 and A3. 26 25 200933377 ❹ 10 15 ❹ 20 Generated based at least on information relating to the second plurality of address paragraphs and the first plurality of page address paragraph tables _ second read address. For example, 'in FIG. 6B' uses address bits TO A23-A8 from the first plurality of page address segments and address bits from the second plurality of address segments A7]A0' generates a second read address. According to an embodiment of the invention, since the second read address points to a memory location in the same page as the first unique address, only the second read needs to be transmitted. Take a bit of the address of the address towel. A read command and repeat position bit A23_A8 can reduce the system operation management time. Finder... Receive a second performance enhancement indication. As shown in Figure 6B, At the same time, the input/output pin is used to receive the performance enhancement indicator bit P7_p〇 in two clocks respectively, as described above. This method includes waiting for n clock cycles, and then using a plurality of clocks simultaneously. The output of the output of the W output from the integrated circuit The number η of these ^ clock cycles can be selected according to the needs of the application. In the embodiment of = = and 5 ' in the special case, η 彳 is shaped as eight waiting clock cycles. Corresponding to the second read address. The data bits D7-D0 shown in the dip picture are output simultaneously using four input/output pins in two clock cycles. The method includes whether a second enhanced read operation is to be performed according to at least the second performance enhancement indication associated with the second performance enhancement indication. The bit Ρ7·Ρ〇 is processed and 'enhanced-enhanced read

θ 下列條件成立:(Ρ7#Ρ3)且(Ρ6#Ρ2)且(Ρ5并U 二二i。在—實施例中’只要是效能增強指示被設置, 此增強續取就會持續地進行。 根據一替代實施例,本發明提供一種增強資料讀取 27 25 200933377 士系統:此系統之—個範例可以參閱第2_6Β圖。舉例而 -,此糸統包含—個或多個元件,組態為: 關;L接收-頁面讀取命令,其與一增強資料讀取相 2·處理與此頁面讀取命令相關的資訊; λ*接收第一複數個位址段落,每一第一複數個位址 又洛母對應的輪入/輸出接腳同時接收; Ο 15 ❹ 20 壬$至少根據與第—複數個位址段落相關的資訊’產 生第一頁面讀取位址; 5.接收一第一效能增強指示; 谁據與效能增強指示相關的資訊,決定是否即將 艰仃嶒強讀取操作; 用第7二福Hη個時脈週期,其中η是一個整數,之後使 陣列輸出d出接腳同時自該積體電路中的記憶 ^此資料與第一頁面讀取位址相關;以及 讀取操作進卩增強讀取操作’假如決定即將進行-增強 會至少抱播伽=中,本發明之系統包含一個或多個元件 即將進行2二效能增強指示侧㈣訊,決定是否 讀取操作之眘:增強讀取操作。在一特定的進行此增強 進行孕之實施例中’此系統包含一個或多個元件,以 段落自每數個位址段落’每-第二複數個位址 中應的輸入/輸出接腳同時接收; 28 200933377 2.至乂根據與第二複數個位址段落相 生第二讀取位址; Λ ^ $ - &lt; At 4欵迠增強指示,且根據至少一個與該 ““ 3Ϊ關的資訊,蚊是否即將進行一第二 瞎传4用時脈週期’其中η是一個整數’之後同 Ϊ人/輪出接腳自該積體電路中的該記憶 陣列輸出資料’該資料與該第二讀取位址相關。 Ο 15 20 古皮定的實施例中,此系統包含—積體電路其具 一 ^邊”面輸入輪出接腳安排,此接腳安排包含第 (;〇=ϋ片一選擇_、第二接腳是資料輸出 β )、第二接腳是寫入保護(WP#/SI02)、第四接腳 ’ i (GND)、第五接腳是資料輸入(SI/SI〇〇)、第六接腳 =列時脈(SCLK)、第七接腳是保留(H〇LD#/SI〇3)以及 接=是供應電壓(vcc)。在一實施例中,此第一複數 立址段落在六個時脈週期内接收。在此系統的一特定 =施例中,第一增強指示包括四個指示位元P4、P5、P6 P7在第一增強指示時脈週期接收,而第二增強指示包 另四個指示位元ρ〇、ρι、p2和p3則在第二增強指示 日、脈週期接收。且會決定即將進行一增強讀取操作,假 如下列條件成立:(P#;P3)且(P6#P2)且(P5计1)且(P4评0)。 一雖然上述係顯示根據本發明的實施例之用於記憶 :件的序列周邊介面方法所使用一選定群組的零 牛^接腳組態以及時序系列,但是也可以有其他各種 異、修改與結合。舉例而言,某些接腳的安排及 f能可以被交換或修改 。根據實施例的不同,時序的 女排也可以被改變。舉另一例而言,使用時脈週期的 29 25 200933377 上升邊緣可簡交換或 =义==^異、修 取記憶體、靜態隨機存取口:;動態隨機存 是其他非揮發記憶體料體千仃快閃記憶體或 示而ί i 於=:較佳實施例與例 10 15θ The following conditions are true: (Ρ7#Ρ3) and (Ρ6#Ρ2) and (Ρ5 and U二二i. In the embodiment - as long as the performance enhancement indication is set, this enhancement continues continuously. In an alternative embodiment, the present invention provides an enhanced data reading 27 25 200933377 system: an example of this system can be found in Figure 2_6. For example - this system contains one or more components, configured as: Off; L receive-page read command, which processes information related to the page read command with an enhanced data read phase; λ* receives the first plurality of address segments, each first plurality of addresses And the corresponding input/output pin of the Luomu is received at the same time; Ο 15 ❹ 20 壬$ at least according to the information related to the first-plural address segment to generate the first page read address; 5. Receive a first performance Enhanced indication; who depends on the information related to the performance enhancement indication, decides whether it is going to be difficult to read the operation; using the 7th second Hn clock cycle, where η is an integer, and then the array output d out the pin simultaneously Memory from the integrated circuit The first page reads the address correlation; and the read operation advances the read operation 'if the decision is about to be performed - the enhancement will at least hold the gamma =, the system of the present invention contains one or more components that are about to perform 2nd performance enhancement Indication side (four), decide whether to read the operation carefully: enhance the read operation. In a specific embodiment of this enhancement for pregnancy 'this system contains one or more components, paragraphs from every number of address paragraphs 'Every-second number of addresses should be received at the same time as the input/output pin; 28 200933377 2. To the second read address according to the second plural address; Λ ^ $ - &lt; At 4 欵迠 enhanced indication, and according to at least one with the "3 的 information, whether the mosquito is about to carry out a second rumor 4 with a clock cycle 'where η is an integer' after the same person / turn out the pin The memory array output data in the integrated circuit is associated with the second read address. Ο 15 20 In the embodiment of the ancient skin, the system includes an integrated circuit having a side input Roll out pin arrangement, this pin arrangement Including the first (; 〇 = 一 一 1 select _, the second pin is data output β), the second pin is write protection (WP# / SI02), the fourth pin 'i (GND), the fifth connection The foot is data input (SI/SI〇〇), sixth pin=column clock (SCLK), seventh pin is reserved (H〇LD#/SI〇3), and connection= is supply voltage (vcc). In an embodiment, the first plurality of address segments are received in six clock cycles. In a particular embodiment of the system, the first enhancement indicator includes four indicator bits P4, P5, P6 P7 at The first enhancement indicates a clock cycle reception, and the second enhancement indication packet is received by the other four indication bits ρ〇, ρι, p2, and p3 on the second enhancement indication date and the pulse period. And it will be decided that an enhanced read operation will be performed if the following conditions are true: (P#; P3) and (P6#P2) and (P5 counts 1) and (P4 evaluates 0). Although the above system shows a sequence and a series of timings of a selected group used in the sequence peripheral interface method for memory: according to an embodiment of the present invention, there may be other various modifications and modifications. Combine. For example, some pin arrangements and f can be exchanged or modified. Depending on the embodiment, the time series of women's volleyball can also be changed. For another example, using the clock cycle of 29 25 200933377 rising edge can be exchanged or ===^^, repair memory, static random access:: dynamic random memory is other non-volatile memory material Millennium flash memory or 而 ί i == preferred embodiment and example 10 15

20 :,之用而為非用以限制本發;;,=5=¾ :二,易地達成各種的修飾與結合,:iti;i 的^=於本發明之精神與及下列申請專利範圍所限定 【圖式簡單說明】 p圖為根據本發明實施例之—具有序列周邊介面 别入輪出埠積體電路的簡易接腳安排組態示意圖。 第2圖為根據本發明實施例之一具有記憶元件之積 體電路的簡易方塊示意圖。 第3圖為根據本發明實施例之增強資料讀取方法的簡 易流程圖。 β 第4Α和4Β圖為根據本發明一實施例之一積體電路 中増強資料讀取方法的簡易時序圖。 第5圖為根據本發明實施例之增強頁面資料讀取方法 的簡易流程圖。 30 200933377 第6A和6B圖為根據本發明一實施例之一積體電路 中增強頁面讀取方法的簡易時序圖。 【主要元件符號說明】 5 200 積體電路元件 221 位址產生器 222 資料暫存器 〇 223 靜態隨機存取記憶體緩衝器 224 模式邏輯 10 225 時脈產生器 226 狀態機構 227 尚電壓產生 230 記憶陣列 231 X解碼器 15 232 頁面緩衝器 233 Y解碼器 234 感應放大器 236 輸出緩衝器 3120 :, use is not used to limit the hair;;, = 5 = 3⁄4: two, easy to achieve a variety of modifications and combinations, : iti; i ^ = in the spirit of the invention and the following patent scope [Description of Schematic] FIG. 5 is a schematic diagram of a simple pin arrangement configuration with a sequence peripheral interface and a round-out hoarding circuit according to an embodiment of the present invention. Fig. 2 is a simplified block diagram showing an integrated circuit having a memory element according to an embodiment of the present invention. Figure 3 is a simplified flow diagram of an enhanced data reading method in accordance with an embodiment of the present invention. The fourth and fourth graphs are simplified timing charts of the bare data reading method in the integrated circuit according to an embodiment of the present invention. Figure 5 is a simplified flow chart of an enhanced page data reading method in accordance with an embodiment of the present invention. 30 200933377 FIGS. 6A and 6B are simplified timing diagrams of an enhanced page reading method in an integrated circuit according to an embodiment of the present invention. [Main component symbol description] 5 200 Integrated circuit component 221 Address generator 222 Data register 223 Static random access memory buffer 224 Mode logic 10 225 Clock generator 226 State mechanism 227 Voltage generation 230 Memory Array 231 X Decoder 15 232 Page Buffer 233 Y Decoder 234Sense Amplifier 236 Output Buffer 31

Claims (1)

200933377 十、申請專利範圍: 5 15 20 —積體電路中讀取#料之方法,該方法包 接收一讀取命令; 接收一第一位址; 接收一第一效能增強_ 能增強指示相關的資訊曰不,且根據至少一個與該第一效 操作;以及 、定是否要進行一第一增強讀取 在根據该第—效能 _ _ 該第一增強讀取操作時、#扣示相關的資訊而決定要進行 、1進行該第一增強讀取操作。 該第-效能增艮圍第1項所述之方法,在所述接收 示相關的資訊來決定是至少一個與該第一效能增強指 之後更包含: 要進行該第一增強讀取操作步驟 等待η個時脈週期, 電路中的-記憶陣列輪出疋—個整數,之後自該積體 機出貝料,該資料與該第一位址相關。 3.如申請專利範圍第1 jg &amp; + 自複數個對應的輪^f,1項所述之方法,更包含: 接收-第二效奸強3出接腳接收1二位址; 能增強指示相_ f 9 且根據至少-個與該第二效 操作; 决疋疋否即將進行該第二增強讀取 等待η個時脈週期, β 該複數個輸人/輸出 ^個整數,之後同時使用 與該第二位址㈣;-自_魏路巾輸出資料,該資料 該第二Χ增強' ^操=增強指示相_資訊,決定是否進行 含: 種 32 25 200933377 4·如申請專利範圍第1項所述之方法,其中該稽 電路包含一序列周邊介面接腳組態,該序列周邊介面 (s〇/si〇rr^ (S0/SI01)帛二接腳是寫入保護(WP#/SI02)、第 i =LK)第五第接:接是I料輸入(s_)、第六接聊是Ϊ ❹10 15 5·如申請專利範圍第4項所述之方法,JL巾兮# 位址是在六_脈職触。 力②〃中該第- 示位元P4、P5、時脈週期所接收之指 所接收之指示位元P0、!&gt;卜p2和朽第::強指f時脈週期 示時脈週期所接收之相千/在該第一增強指 指示時脈週期所接收之Γ指巾位曰元、&amp;對比應較之在該第二增強 將進i該^!法,其中決定即 且(P6纤2)且(P5#P1)a(P^p〇)。 列條件成立··(P7#P3) 25 含: 8. 種自一積體電路中讀取資料 之方法,該方法包 接收一頁面讀取命令; 接收一第一位址; 33 200933377 接收一第一效能增強 能增強指示相關的資訊,曰、不^且根據至少一個與該第一效 讀取操作;以及 &quot;决疋是否要進行一第一增強頁面 在根據該第一效能 該增強頁面讀取操作時策礼不相關的資訊而決定要進行 ,運行該增強頁面讀取操作。 9,如申請專利範圍笛δ s φ 10 15 ❹ 20 該第一效能增強指示,且=8項所述之方法,在所述接收 示相關的資訊,來決定是據至少一個與該第一效能增強指 步驟之後更包含:疋要進行該第一增強頁面讀取操作 等待η個時脈週期, 複數個輸入/輸出接腳自」、Τ η疋一個整數,之後同時使用 第-位址相關。 —錢陣列輸出 資料,該資料與該 自複數個 第8項所述之方法’更包含: 接收-第二效能増 ==的資訊’決定是否即將進行-第二“;面: f待二個時脈週期,其中n是―個整數,之後同時使用 μn ^申請專利範圍第8項所述之方法,其中該積體 5二1列周邊介面接腳組態,該序列周邊介面接腳組 先、匕3第一接=是晶片選擇(cs#)、第二接腳是資料輸出 (S0/SI01)、第二接腳是寫入保護(wp職〇幻第四接聊是 接地(GND)、第五接腳是資料輸入(SI/SI〇〇)、第六接腳是序 34 25 200933377 列時脈(SCLK)、第七接腳是保留(HOLD#/SI〇3)以及第八接 腳是供應電壓(VCC)。 一上如申請專利範圍第n項所述之方法,其中該第 二效能增強^示包含在—第—增強指示時脈週期所接收之 P4 P5、PM° P7,以及在—第二增強指示時脈週 j所1收之指示位元p〇、n、p2和p3,每一在該第 〇 10 15 Q 20 d、週期所接收之指示位元會與所對應之在該第:增 认不時脈週期所接收之一指示位元進行比較。曰 -位上3是在項料之枝,其中該第 一個或錢’該系統包含: 接收一讀取命令; 接收一第一位址; 進行令第在第一效能增強指示相關的資H 該第-增強讀取操作時進行該第-增強讀取,喿r定要 個或口範圍第14項所述之系統,其中該— 接收一第二位址; 接收一第二效能增強指示;以及 35 25 200933377 個輸週期’其中η是—個整數,之後使用複數 該資料與該電路中的該記憶陣列輪出資料, 資訊而蚊㈣卩料行該第:增相關的 ❿10 15 ❹ 20 體電專利範圍帛14項所述之系統,其中該積 組態包含;-接腳面接腳組態’該序列周邊介面接腳 (SO/sion ^ ^ irD)、第第= =以。接腳是保留一10取及第八接 -二在如:二專:期圍接第收1。4項所述之系統,其中該第 -效範㈣14摘述之纽,其中該第 P4 :P; ^ ;^f 期所接收之指示位元p〇,、P2和P3第= 該第-增強讀取操作,假如下祕决疋即將進仔 且(P5洲且(P4_。下列條件成立:(P7㈣且(P6那) 36 25200933377 X. Patent application scope: 5 15 20 — The method of reading #料 in the integrated circuit, the method package receives a read command; receives a first address; receives a first performance enhancement _ can enhance the indication related The information is not, and according to at least one of the first effect operations; and whether a first enhanced read is to be performed, according to the first performance___ the first enhanced read operation, #denotation related information It is decided to perform, and the first enhanced read operation is performed. The method of claim 1, wherein the receiving the related information to determine that at least one is after the first performance enhancement finger comprises: waiting for the first enhanced read operation step η clock cycles, the -memory array in the circuit turns out an integer, and then the material is discharged from the integrated machine, and the data is related to the first address. 3. If the patent application scope is 1st jg &amp; + self-complex number of corresponding rounds ^f, the method described in 1 item, further includes: receiving - second effect rape strong 3 out of the pin receiving 1 two address; can be enhanced Indicating phase _f 9 and operating according to at least one and the second effect; determining whether the second enhanced read is about to wait for n clock cycles, β the plurality of input/output ^ integers, and then simultaneously Use and the second address (four); - from the _ Weilu towel output data, the data of the second Χ enhancement ' ^ 操 = enhanced indication phase _ information, decide whether to carry out: species 32 25 200933377 4 · such as the scope of patent application The method of claim 1, wherein the circuit comprises a sequence of peripheral interface pin configurations, and the sequence peripheral interface (s〇/si〇rr^ (S0/SI01) 帛 two pins is write protection (WP#) /SI02), the ith = LK) The fifth connection: the input is the I input (s_), the sixth chat is Ϊ 15 10 15 5 · The method described in the fourth paragraph of the patent application, JL 兮# bit The address is in the six veins. In the force 2〃, the first-display bit P4, P5, the received bit P0, !&gt;, the p2 and the decayed:: strong finger f clock cycle show the clock cycle The phase of the received phase/in the first enhancement indicator indicates that the Γ 曰 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 ( ( ( ( Fiber 2) and (P5#P1)a (P^p〇). Column condition is established··(P7#P3) 25 Contains: 8. A method of reading data from an integrated circuit, the method packet receiving a page read command; receiving a first address; 33 200933377 receiving a first A performance enhancement can enhance the indication related information, 曰, 不^ according to at least one with the first effect read operation; and &quot; decide whether to perform a first enhanced page at the enhanced page read according to the first performance It is decided to perform the operation of the enhanced page read operation when the operation is not related to the information. 9, as claimed in the patent scope flute δ s φ 10 15 ❹ 20 the first performance enhancement indication, and the method of claim 8, wherein the receiving the relevant information is determined according to at least one and the first performance The step of enhancing the step further comprises: waiting for the first enhanced page read operation to wait for n clock cycles, the plurality of input/output pins from "," an integer, and then using the first address correlation. - money array output data, the data and the method described in the plurality of items 8 further include: receiving - the second performance 増 == information 'determination is about to proceed - second"; face: f to two The clock cycle, where n is an integer, and then uses the method described in item 8 of the application of μn ^, wherein the integrated body is configured with a peripheral interface pin, and the peripheral interface pin group of the sequence is first匕3 first connection = wafer selection (cs#), second pin is data output (S0/SI01), second pin is write protection (wp job phantom fourth chat is ground (GND) The fifth pin is the data input (SI/SI〇〇), the sixth pin is the sequence 34 25 200933377 column clock (SCLK), the seventh pin is reserved (HOLD#/SI〇3), and the eighth connection The foot is a supply voltage (VCC). The method as described in claim n, wherein the second performance enhancement is included in the P-P5, PM° P7 received by the -first-enhanced indication clock cycle, And in the second enhanced indication clock period j, the indication bits p〇, n, p2, and p3 are received, each of which is connected to the first 10 15 Q 20 d The receiving indicator bit will be compared with the corresponding one of the indicator bits received in the first: the acknowledgment period. 曰-bit 3 is the branch of the item, where the first one or the money' The system includes: receiving a read command; receiving a first address; performing the first enhanced read operation associated with the first performance enhancement indication; performing the first enhanced read operation, Or the system of claim 14, wherein the receiving a second address; receiving a second performance enhancement indication; and 35 25 200933377 transmission periods 'where η is an integer, and then using the plurality of data With the memory array in the circuit, the data is transmitted, and the mosquito (4) picks up the first: incrementally related ❿10 15 ❹ 20 body power patent scope 帛 14 items, wherein the product configuration includes; The foot pin configuration 'the sequence of the peripheral interface pin (SO / sion ^ ^ irD), the first = = to. The pin is reserved for a 10 and the eighth connection - two in such as: two special: period enclosure Receiving the system described in item 1. 4, wherein the first-effect (four) 14 is summarized as a new In the first P4:P; ^ ;^f period, the indication bits p〇, P2, and P3 are received = the first-enhanced read operation, and the following is the secret to be entered (P5 and (P4_) The following conditions are true: (P7 (four) and (P6) 36 25
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