200923134 九、發明說明 【發明所屬之技術領域】 以下之揭示內容有關一使用單一電鍍設備自動電鍍多 數金屬層或複雜結構之方法及設備。 【先前技術】 傳統之電鍍系統大致上利用複數不同之電鍍槽，每一 電鍍槽包含組構成電鍍一特別金屬或合金之不同的化學電 鍍浴。該複數電鍍槽大致上係包括複數電鍍槽之電鍍系統 的一部份，每一電鍍槽被組構成施行一特定之工作，例如 酸蝕刻/清潔、沖洗、乾燥、退火、度量衡、電鍍等。傳 統之電鍍系統需要一在昂貴的無塵室空間內之大覆蓋區。 另外，傳統電鍍系統及電鍍槽大致上係單一化學槽，亦 即，一電鍍槽使用單一化學過程和現象，以電鍍單一金屬 材料。如此，複雜之化學電鍍溶液及製程必需被使用於合 金電鍍，且不同之個別金屬層的沈積係困難的，並需要複 數電鍍槽之連續使用。 多數電鑛槽至不同金屬層的電鍍合金之使用呈現數個 缺點。譬如，由一電鍍槽傳送一基板至另一電鍍槽之製程 增加形成在該基板上之氧化的可能性。如果其在該隨後的 層被沈積之前未被移除，氧化能於該等被電鍍層中造成缺 陷，且該氧化層之移除將一清潔及沖洗步驟加至該電镀製 程。這些製程之每一個增加用於一基板之處理時間，且如 此固有地減少該電鍍系統之產量。 -5- 200923134 【發明內容】 本揭示內容提供一製程電鍍計算器’其被組 快速改變化學槽，且被設計成對顧客提供具有多 理需求及較高可用時間之更多彈性。本揭示內容 對半導體後端組裝提供具成本效益之電鍍工具及 層製程。本揭示內容之小巧的電鍍沈積製程工具 該電子工業提供一更具成本效益之方式’以製造 低成本之互連部，包括、但不限於那些對於覆晶 者。 利用獨特的單一晶圓、多金屬製程槽能夠製 之工具，大致上包括用於電鍍製程條件之即時回 供勝過其競爭者的需要遠較多空間及維護之單一 槽的主要操作優點。製程知識係亦大致上嵌入在 簡單與高產之接合能力的廣泛導入及採購之軟 內。此電鍍計算器應能夠使想要開發及提供覆 CSP之大部份公司、以及具有參數（recipe )可 意供應商內部地做成。 再者，結合改良之製程技術與一新穎之封閉 少於產生中之導入及支援覆晶接合技術的困難性 內容之小巧的電鍍計算器大致上不只以連續及可 式賦予多金屬之能力，同時也以一更強大之單槽 器槪念取代該傳統之電鍍槽至電鍍槽及儲槽至儲 送。如此，可消除經過各種電鍍化學過程運動該 構成使用 數金屬處 之目的係 可靠之多 大致上對 高效能、 技術有用 成很小巧 饋，及提 金屬製程 能夠更加 體/硬體 晶與晶圓 攜性之生 槽工具減 。本揭示 重複的方 電鍍計算 槽晶圓傳 晶圓之需 -6- 200923134 求’藉此減少基板傳送相關機械手臂之需求，且因此減少 機械成本、覆蓋區’及改善機械利用率。此單槽方式藉由 使晶圓處理減至最少促進及改善生產，且更重要的是，大 致上能夠使寬廣範圍之無鉛焊料被應用在單槽平臺中。 此外’將被會同這些工具使用而用於包膠粉末及焊料 凸塊之製程被開發。額外之工作持續發展高效能凸塊及互 連部’該互連部被期待改善銅以及焊料合金中之熱及電傳 導性。這將致力於正要求更多導熱性的互連部之重要的高 效能計算及手持式處理器市場部份。 本揭示內容之目的、優點及新穎特色、與適用性之進 一步範圍’將在隨後的詳細敘述中會同所附圖面局部地提 出’且對於那些熟諳此技藝者在檢查下文時將局部地變得 明顯，或可藉由該揭示內容之實踐所學習。該揭示內容之 目的及優點可藉著於以下敘述中特別指出之工具及組合所 實現及獲得。 該揭示內容之具體實施例可提供一電鍍計算器，其具 有一電鍍槽，該電鍍槽設有一被組構成容納電鍍製程用之 電鍍溶液的內部處理容積；一電鍍槽安裝平臺，其至少在 第一點連接至一作動器及在第二點連接至一可運動附接構 件；一可旋轉之基板支撐構件，其定位在該處理容積中， 且具有一縱向延伸軸桿，該軸桿由該支撐構件的一非基板 嚙合側面延伸；一傳感器’其耦接至該縱向延伸軸桿，且 被組構成經由該軸桿賦予能量至該基板支撐構件；及至少 一可拆卸化學模組’其與該處理容積流體相通。 200923134 該揭示內容之具體實施例可進一步提供用於在單一電 鑛槽中將多數金屬層電鍍至基板上之方法，而在該第一及 第二金屬沈積步驟之間不需由該電鍍槽移去該基板。該示 範之方法可包括將該基板定位在一於電鍍槽的處理容積中 之陰極的基板支撐構件上；以第一電鍍溶液充塡該處理容 積，該第一電鍍溶液被組構成將第一金屬層電鍍至該基板 上；在該基板及一定位在該處理容積中的陽極組件之間施 加第一電鍍偏壓，以將該第一金屬電鍍至該基板上；與由 該處理容積排出該第一電鍍溶液。該示範之方法可另包括 用惰性氣體灌注該處理容積，以防止周遭之氧氣氧化保持 被定位在該處理容積中之基板；以去離子水沖洗該處理容 積；以第二電鍍溶液充塡該處理容積，該第二電鎪溶液被 組構成將第二金屬層電鍍至保持被定位在該處理容積中之 基板上；及在該基板及該陽極組件之間施加第二電鍍偏 壓，以將該第二金屬電鍍至該第一金屬層上。 本發明之具體實施例可進一步提供一用於在單一電鍍 製程中將多數不同金屬層電鍍至基板上之電鍍計算器。該 電鍍計算器可包括機構，用於在電鍍槽之處理容積中將該 基板定位在一陰極的基板支撐構件上；第一化學品供給機 構，用於以被組構成將第一金屬層電鍍至該基板上之第一 電鍍溶液充塡該處理容積；與機構，用於在該基板及一定 位在該處理容積中的陽極組件之間施加第一電鍍偏壓，以 將該第一金屬電鍍至該基板上。該電鍍計算器可另包括機 構，用於由該處理容積排出該第一電鍍溶液；氣體供給機 -8- 200923134 構’用於以惰性氣體灌注該處理容積，以防止周遭之氧氣 氧化保持被定位在該處理容積中之基板；機構，用於以去 離子水沖洗該處理容積；第二化學品供給機構，用於以第 二電鍍溶液充塡該處理容積，該第二電鍍溶液被組構成將 %—金屬層電鑛至保持被定位在該處理容積中之基板上； 及機構，用於在該基板及該陽極組件之間施加第二電鍍偏 壓，以將該第二金屬電鍍至該第一金屬層上。 【實施方式】 應了解以下之揭示內容提供很多不同之具體實施例、 或範例，用於提供各種具體實施例之不同特色。在下面敘 述零組件及配置之特定範例，以簡化本揭示內容。這些當 然僅只是範例，且不欲限制之。此外，本揭示內容可於該 等各種範例中重複參考數目及/或字母。此重複係爲著要 之簡化及清楚目的，且其本身未指示所討論的各種具體實 施例及/或組構間之關係。再者，在隨後之敘述中，在第 二部件上方或在第二部件上形成第一部件可包括諸具體實 施例，其中該第一及第二部件係直接接觸地形成，且亦可 包括諸具體實施例，其中額外之部件可被形成爲介入該第 一及第二部件中，使得該第一及第二部件可能未直接接 觸。最後，下面所呈現之示範具體實施例能以各種方式被 組合，亦即，來自一具體實施例之任何元件可被使用於任 何另一具體實施例中，而不會由本發明脫離。 圖1A-1M說明本發明之封閉式電鍍槽的各種示範具 200923134 體實施例，其可被用於電鍍任何尺寸晶圓，包括但不限於 2〇0毫米或3 00毫米晶圓。本揭示內容之封閉槽技術對最 終使用者提供在傳統晶圓電鍍系統中未發現的減少之晶圓 破損及高速電鍍。該封閉槽大致上提供一嵌入式多數區陽 極。此特色隨著能量、機械及流體管理運動學提供優異之 電鍍均勻性。本揭示內容之一些特色及優點可包括：手動 或自動之（卡匣餵入）晶圓處理自動化；GUI介面；可程 式化製程參數控制及定製參數組構；固持高達六種特定金 屬之集裝箱式化學飼養場（Farm );單槽噴射陽極系統， 其可包括四或六區之可程式化、不溶解的陽極；該等區域 可包括同心環，每一同心環具有一獨立地可程式化之電 壓；高速電鍍，每日最大化晶圓，對於銅具有高達6微米 /分之沈積比率及對於錫/鉛具有高達4.5微米/分之沈積比 率·，具有高達4.5微米/分之沈積比率的無鉛之錫/銀；多 數金屬能力，以在單槽內滿足數個互連需求（多堆疊金 屬）；快速化學轉換；在該單槽內用於最大運動學之嵌入 式能量及流體攪動；及具有用於運動學控制之可程式化能 量系統的嵌入式化學噴射。 該單一封閉槽減少蒸發及消除晶圓破損，其能當該晶 圓於多站製程或系統中被傳送至額外之沖洗及電鍍站時發 生。該小槽處理容積提供更精確之製程控制，且需要更少 之用於沖洗的水，如此能夠使用單槽。該封閉槽亦越過該 晶圓提供優異之厚度均勻性：對於銅、錫/鉛、及無鉛之 錫/銀 <百分之1 0，經證實之微粒電鍍與合金電鍍爲可能 -10- 200923134 的’低成本之所有權，及一小的製造廠覆蓋區：用於200 毫米晶圓：目前：1.32米寬x.99米深xl.88米高（根據計 劃的：1米寬xl米深X2.2米高），及用於3 00毫米晶 圓：目前：1 .5米寬X 1 .5米深X 1 . 8 8米高（根據計劃的： 1·3米寬xl.3米深x2.2米高）。該單一封閉槽提供一可量 化商業模型、用於最大利用率之可量化容量模型、快速處 理及化學轉變、處理多數結構之彈性、前緣生產利用比率 及多數金屬電鍍。該單一封閉槽提供用於晶圓接合之晶圓 位準處理及利用金屬密封環，該等密封環譬如於製造 MEMS裝置、太陽能電池、及包括玻璃穿透孔（通孔）電 鑛之半導體處理態樣中係有益的。 譬如，圖1Α說明本發明之示範電鍍計算器100的頂 部透視圖，且圖1 Β及1 C說明一示範電鍍計算器1 〇 〇之側 面剖視圖。圖1 Β說明在一封閉或處理位置中之示範電鍍 計算器100，且圖1C說明在一打開或基板載入位置中之 示範電鍍計算器100。該電鍍計算器100大致上可包括一 處理容積1 02，其被組構成在其中容納處理化學組成及待 電鍍之基板。一實質上平的基板支撐構件1 04係大致上組 構成在其上面支撐一用於處理之基板，及該基板支撐構件 104亦可繞著一直立之軸心旋轉，且再者於一些示範具體 實施例中，該基板支撐構件1 04可由一水平面傾斜。該電 鍍計算器1〇〇亦可包括一流體運送歧管或閥組106，其被 組構成運送經選擇之化學組成、去離子水、及其他液體至 該電鍍計算器處理容積102。該示範處理計算器100亦可 -11 - 200923134 包括至少一底部傳感器1 〇 8，其被組構成賦予能量至該基 板支撐構件104。藉由該傳感器108賦予至該處理計算器 1 〇〇之能量大致上係一聲波型能量，亦即超音波或百萬頻 率超音波。於本發明的一具體實施例中，藉由該傳感器 108所產生之能量可爲大約40千赫茲。該能量係經由該驅 動機件112傳送至該基板。該處理容積102可包括大致上 定位在一實質上與待電鍍基板呈平行關係之陽極其 大致上被支撐在該基板支撐構件104上，並由該基板支撐 構件驅動機件1 1 2可旋轉地支撐。該驅動機件1 1 2及該基 板支撐構件1 〇4可被降低（如圖1 C所示），以允許一基 板被載入至該基板支撐構件104上》 如圖1 D之局部剖視及透視圖中所示，一接觸環114 被用於電接觸待電鍍基板之周邊，且提供一電偏壓至其 上，以支撐一電化學沈積製程。該接觸環114可大致上包 括複數徑向地定位繞著一半堅硬的及實質上平的環件之導 電突指。該等傳導性突指之定位大致上被組構成電接觸該 電鍍計算器1 00中之待處理基板的周邊部份，以運送一足 以支持電鍍製程之電偏壓至該基板。可用於本發明的示範 電鍍計算器1 〇 〇中之接觸環的各種組構及示範具體實施例 將在此中被進一步討論。圖1D顯示該電鍍計算器陽極 110，其被定位在該處理容積102之上部中。該陽極η〇 大致上包括複數同心地定位之傳導元件，該等元件能以選 定電功率被個別地施加偏壓，以在該電鍍計算器丨〇〇中有 利於越過待電鑛基板之表面的均句電鑛沈積。該陽極1 1 0 -12- 200923134 係大致上剛好定位在該接觸環1 1 4上方，且更特別 陽極1 1 〇係大致上定位緊接在藉由該接觸環1 1 4所 中心孔口上方。如此，當一待電鍍基板被定位在該 算器1〇〇中及被帶入與該接觸環114電連通時， 1 1 0將大致上被定位緊接在待電鍍基板上方。 圖1 E說明本發明的一示範可移除化學品供 1 29之側視圖。該化學品供給模組1 29大致上包括 存槽 130、裝載槽 132、流體歧管 138、至少一 1 40、及一被選擇性地作動之流體幫浦1 42。該裝載 亦可包括一流體加熱器1 3 6及一流體過濾器1 3 4。 中，該化學品供給模組1 29可被連接至一電鍍 1 〇〇，以支持電鍍製程的一部份。該化學品供給模 中所容納之流體可被組構成將一特別之金屬電鍍 上。額外之化學品供給模組1 29亦可與該電鍍計算 連通，並可被組構成供給一不同之化學溶液至該電 器100，以致一不同之金屬可被電鍍在該基板上。 如果在該電鍍計算器1 00中進行之特別電鍍製程需 一處理順序中將不同金屬沈積在單一基板上，每一 算器1 0 0可爲與一或多個化學品供給模組1 2 9連通 學品供給模組1 29大致上操作至由該大容量儲存槽 大批化學溶液拉入該較小容量裝載槽1 3 2 (其尺寸 計成大約與該電鍍計算器100之處理容積1〇2 量），在此該溶液於運送至該電鍍計算器1 00之前 與過濾。 是，該 形成之 電鍍計 該陽極 給模組 主要儲 流體閥 槽1 32 在操作 計算器 組 129 至基板 器100 鍍計算 如此， 要於單 電鍍計 。該化 130將 可被設 相同容 被加熱 -13- 200923134 爲一特別之製程所需要，本揭示內容大致上爲每一化 學組成、且視情況爲廢料提供分開之谷器槽（模組 12 9)。每一槽可包括一加熱器’用於將該化學組成加熱 至一最佳之製程溫度。該等容器可被組構成能輕易地可替 換的及/或可再充塡的。該用過的化學組成可被組構成在 處理、諸如過濾之後將再循環退入該適當的槽。一選擇性 之幫浦加熱器過濾模組係設置於該製程槽及該槽之間’能 夠使該槽爲可經由一“隨插即用”系統替換的。一或多個 選擇性之度量衡系統大致上被利用在一用於自動製程循環 控制之即時反饋迴路內。此等系統可包括傳導性（例如 RTD )、聲納，最佳之位準感測、及消耗預測。一溫差電 池（TEC )可被使用；這不只測量該沈積之厚度，但亦可 被用於微調（加熱或冷卻）該製程溫度。傳導性感測器大 致上確保不同化學品間之潔淨度，防止交叉污染及估計該 等化學品之降級。 一槽內壓力監測器允許速率充塡，以控制化學流動及 溢流，且在原處監視槽內壓力之均勻性。大批及在晶圓溫 度監視維持最佳化之電鍍條件。一充塡感測器可被選擇性 地使用。電阻率接觸點提供用於最佳電鍍性能之即時反 饋。槽內薄膜傳導性感測決定該槽內壁面之潔淨度。整合 式光學曲率測量（聯機應力測試）可被用來監視橫越該晶 圓之分佈。消耗模型建立可被用來監視該功率使用，以調 節化學性能及提供即時之反饋至被電鍍晶圓間之系統。且 一電化學氧化物指示器在該晶圓/溶液介面提供一阻抗指 -14- 200923134 示。在單一室內，多金屬堆疊可被施行。於一此種範例 中，一銅層可被沈積，施行一沖洗，一鎳層係接著被沈 積，及最後沈積一鈀罩蓋，所有製程未由該槽移去該晶 圓。雖然這些步驟典型被連續地施行，不同之金屬可被選 擇性地同時沈積。 該槽大致上提供被傾斜及/或振動之能力。於一具體 實施例中，該槽係在第一方向中傾斜及由該底部充塡。該 進入之化學組成當其充塡時接著將所有氣體清出該槽。於 操作期間，該槽大致上振動（有規律地或隨機地），提供 機械式攪動，用於增加電鍍均勻性及消除駐波節點。該槽 亦大致上在沖洗期間振動。於電鍍期間如果必需，該槽可 在任何想要之角度或多數角度傾斜，促進氣體及氣泡移 除。該槽大致上在第二方向中傾斜，以排出該沖洗廢料， 藉此確保完全之排出及簡化至該槽之化學組成連接。 圖1G說明本發明之示範電鍍計算器100的側面及透 視圖。該電鍍計算器1 〇〇之頂部右側透視圖顯示一實質上 平面式平臺153，該電鍍計算器100被安裝在該平臺上。 一作動器150係在第一端部連接至一未連接至該平臺153 之堅硬的構件154，且係在第二端部連接至該平臺153。 在該平臺1 5 3之與該作動器1 5 0的連接點相反之側面中， 該平臺153被支撐在一特別之點，其中該點具有一直立之 軸心1 5 1。如此，當該平臺1 5 3繞行該樞軸點之軸心1 5 1 時，該作動器1 5 0可於藉由該箭頭1 5 2所指示之方向中振 動該平臺153。此藉由作動器150所提供之振動可被用來 -15- 200923134 施加一大量運動至該電鏟計算器100。此大量運動可被用 來有利於來自該電鍍計算器〗00之流體的排出，且用來進 一步攪拌或攪動該處理容積〗02中所容納之電鍍溶液中的 化學成份。於本發明之其他具體實施例中，額外之樞軸點 及/或作驅動器可被用來選擇性地傾斜該平臺i 5 3，以譬 如有利於最小氣泡黏著至該基板表面。 該晶圓夾頭或支撐構件1 04可被於操作至剪切該化學 組成期間旋轉，藉此增加均勻性，及/或在處理之後旋 轉，以便乾燥該晶圓（在該案例中，大致上在大約每分鐘 1 5 00轉施行自轉）。該夾頭1〇4大致上藉由插入於一中空 軸桿旋轉馬達中而自轉。於此具體實施例中，該晶圓係設 置在該夾頭上。該夾頭1 04稍微直立地往上運動，以在該 晶圓及該接觸環1 1 4之間提供用於處理的接觸。用於沖 洗，該夾頭1 04被降低供自轉。此製程亦確保該接觸環 1 1 4係亦被沖洗。用於增加之製程控制’該化學組成可經 過該陽極110中之孔洞或凹槽、或另一選擇地經過超音波 傳感器環件（在下面敘述）中之一或多個開口噴射。於任 一案例中，待噴射之化學組成可在最初的使用之後由該室 再循環。由該陽極至該晶圓（陰極）之距離亦可調整的’ 大致上由大約〇 · 8 ”至大約1 · 8 。追可經由諸如姆指螺釘 之機械式機構被手動地完成’或經由一可程式化之電磁開 關自動地完成。該等陽極片段大致上被多通道整流逾"所控 制，該整流器控制每一通道之分佈。此陽極提供以正向電 流電鍍之能力’且該顛倒電鍍增強該凸塊表面之形態均句 •16- 200923134 性。 圖1L說明本發明之示範電鍍計算器100的處理槽之 上部的側面剖視圖。該陽極1 1 0可包括複數陽極片段 1 10a、1 1 Ob、及1 10c。該等陽極片段大致上包括傳導性構 件，每一構件係與一個別之電源端子1 1 〇d連通。如此， 該等個別陽極片段1 1 0之每一個可被個別地供電及控制。 該處理槽1 〇 〇之上部亦可包括一或多個感測器1 1 1。另 外，該電鍍製程中所使用之電解質溶液亦能以一方式被循 環經過該處理容積110，而強迫該電解質經過該陽極110 中所形成之孔洞、孔口、或凹槽。如此，用於該電鍍製程 之電解質可被強迫經過該陽極11 0朝向待以一類似於高壓 噴嘴的方式電鍍之基板。 圖1M說明一用於本發明之電鍍計算器100的示範控 制架或機架系統1 70之局部分解透視圖。該控制架1 70可 包括一機罩173、基板插入窗口 172、及一內部容積174， 該內部容積被組構成容納該電鍍計算器1 0 0。一控制系統 1 7 1、諸如電腦可被用來控制該電鍍計算器1 〇〇之各種部 件及製程。一可拆卸之化學品供給槽1 75可被安裝緊接至 該控制架170及可由該處移除。 本揭示內容之電鍍計算器係完全創新的，在其中該電 鍍計算器利用單一室，以處理經過該整個製程之所有金屬 沈積步驟以及所有預先清潔及中間之清潔。今日之電鍍工 具皆使用一系列分開之槽，用於該電鍍化學組成、清潔化 學組成、及沖洗操作。大部份該成本係機械手臂，其能夠 -17- 200923134 使高達3 0 0毫米直徑之很脆的晶圓於諸槽之間運動，而不 會損壞。 單槽電鍍槪念之優點係該晶圓上方之環境能被控制， 以避免氧氣進入該電鍍槽與造成金屬階梯狀部份間之氧 化。假使該工業正進展至更複雜之多金屬覆晶接合及晶圓 尺度封裝互連，此工具提供減少處理的主要優點，當作該 晶圓運動環繞該工具之時序的更快電鍍次數被消除，且化 學組成必需由該槽推進一很短之距離至該電鍍槽，而賦予 危險化學組成之滲漏的更少之風險。多金屬凸塊銅+鎳+鉛 錫及一以焊料罩蓋之銅凸塊陣列的放大視圖係顯示於圖1 8 中。 此新的單槽具體實施例被稱爲一電鍍計算器，因爲其 能夠使該第一完整之電鍍製程將全部於單一室中完成，同 時運動化學組成及隨後之沖洗水兩者通過該晶圓，而不是 使該晶圓運動至該化學組成。這由於該可預測性賦予可程 式化參數及可重複性之一新的標準，基於該整個製程順序 及化學組成與電氣條件、材料、及環境之不斷監視，該可 預測性藉由具有較佳之反饋、正向饋給、及最後之預測量 測所賦予。 一些優點及較佳特色選擇性地包括：當該整個晶圓電 鍍及沖洗步驟能被完成時，減少晶圓處理及破損，而一旦 被載入該工具不會逐步地運動該晶圓；更有效率之單一電 鍍槽容量賦予更快之ROI及具有遠較快速歸還期之減少的 資金成本；立刻編排試算表格式中之參數與對於任何製程 -18- 200923134 變化或順序變化作修改、以及以相同之結果輸入至其他機 械的能力-正像一電腦上之試算表或程式。 此工具相對其他多槽系統之差異爲：大致上賦予很精 密之控制與即時監視以及控制下之環境；隨插即用化學組 成槽或“噴墨鍍覆裝置”槪念，在此具有較密集之金屬-離子化學組成混合物的遠較小槽大致上被使用，其能夠使 諸槽改變，而沒有一長的加熱製程及遠較佳之工具可用時 間，該等較小之槽被設計成用於該較短之生產運轉，但仍 然可藉由使用多數槽中之相同化學組成處理較長之運轉， 該系統監視用於金屬-離子消耗及化學組成之一般降級的 諸槽，直至其發出信號告知必需替換該槽爲止；於室中與 該化學組成及設有槽內感測器的電鍍槽之外部監視具有即 時之遠較多之一致及可重複的製程控制：在金屬沈積之間 用於槽室及晶圓的最主動式沖洗及清潔、或沖洗之前及沖 洗之後的主動式傾斜攪動，在現今之工具中未做成此傾斜 攪動，且代表一很具成本效益的方式，以清潔一具有最小 水量之大電鍍槽區域；及充塡與電鍍-該系統亦被設計成 使化學組成滲漏減至最小，該化學組成滲漏典型藉由熱流 體之不斷循環經過管系的長期運轉所看見，用於該整個製 程時間，此工具將以化學組成充塡該室及使用相同之化學 組成電鍍，或將定期地改變該化學組成，而藉由運動如此 多之流體體積，能夠於加熱該化學組成、_取該化學組 成、及大致上增加該等成本中使用更少之電力。 額外地’ 一個單一單元完成多數功能··預處理、電 -19- 200923134 鍍、沖洗、乾燥；取代多數覆蓋區、機械手臂、資本費 用；封閉槽大致上提供惰性氣體，以防止氧化；像電鍍之 開放槽；軟體程式“ Inteliplate” ；智慧型軟體由在電鍍 槽中及於槽中之度量衡感測器接收反饋，以用於恆定之電 鍍比率調整該整流器中之電鍍參數；及雙重功能之傳導性 感測器，以當該電鍍槽係滿的及決定該濃度時告知。該單 一單元亦提供用於奈米粒子電鍍--將金屬微粒加至該等化 學品，以促進及改善在回流之後的均勻性；組織層 (Strata )電鍍製程，在此使用不同化學品於預定順序中 形成多數電鍍層，由於在可沈積一不同層之前消除大量沖 洗及資格再賦予，如傳統電鍍系統所具有，其急劇地加速 電鍍製程。 大致上，改善之性能包括厚度之均勻性、化學效率、 製造之快速運轉比率、以及由該無電電解質至該晶圓表 面、特別至分佈之均勻性的沈積材料之品質。現存方法利 用無電電鍍中之溫度及化學控制，以帶來均勻之電鍍結 果。溫度係一影響該電鍍製程之關鍵參數。一旦鑛液接觸 一適當之基板，無電電鍍在一寬廣範圍之溫度發生。一鍍 液之調處溫度係一時間回應程序，因此，視用於無電電鍍 之溫度控制被限制至某一範圍而定。具有很低電力電路之 電接觸提供一用於無電電鍍的快速開關之停止/開始，其 展開無電製程之精確控制的能力。 用於電鍍矽晶圓及其他電子基板之超音波攪動傳統製 程產生電鍍沈積物，該等沈積物在橫越該晶圓表面之沈積 -20- 200923134 高度中變化。這是局部由於緊接在該增長的金屬沈積物上 方的邊界層中之金屬離子的濃度中之變化。攪動、諸如邊 界層攪動，可被組構成藉由超音波傳感器之使用所提供。 現存方法利用單一頻率發生器及傳感器震動電解質，以在 該晶圓表面造成流體交換。然而，於微尺寸中之質量傳送 及能量傳送係電鍍速率及供電效率之主要促成者。爲使某 一材料沈積在一特定之幾何形狀部件上，某一範圍之震動 頻率、振幅、及硬體組構能最佳化質量及能量傳送。一更 廣範圍之震動頻率發生器、傳感器、及操作模型（震動模 型與組構模型）最佳化製程參數，諸如頻率範圍、功率範 圍、及用於一特別製程的傳感器至基板或基板夾具之連 接。藉由驅動多數聲音頻率經過該電鍍電解質及橫越此邊 界層介面，此攪動瓦解該邊界層分層狀態，造成微米尺寸 之湍流混合。此外，在此有直接在該晶圓表面之空氣分 子，該等空氣分子大致上被位移，以達成牢固及均勻之電 鍍結果。此揭示內容大致上增強打破該晶圓上之表面張力 的能力，以有利於、以及促進該電鍍製程。 該聲能可被向上引導經過該晶圓之底側、往下引導在 該晶圓表面、或橫越平行於該邊界層及該晶圓兩者之平面 的晶圓表面。該聲能不只爲一恆定周期之純函數，但可包 括連續周期性函數與及橫越該聽得見之聲音範圍（‘白噪 音’）及該跨音速範圍的連續多數重疊頻率之組合、或於 該聽得見之聲音及/或跨音速頻率範圍中的一連串短歷 時-脈衝式聲能封包之組合的其中之一。於此技術中，次 -21 - 200923134 音速、音速、超音波、及百萬頻率超音波能被導入一液體 系統、或諸系統’以於該系統或諸系統中產生均勻分佈之 能量、質量、及動量。 應用包括待被使用在半導體、MEMS、微型化、及奈 米技術製造中之清潔、電鍍、無電電鍍、混合目的。各種 波能由任何方向經過保持、促進、及/或起作用材料被導 入該系統或諸系統。各種波可被原始產生、放大、引導、 脈波的產生、有/無相同之振幅、不斷及/或間隔地。各 種波能被壓電、磁性、喇叭形、單一、多數、及/或有/ 無波導器之傳感器所導入。該方法提供用於將能量及/或 動量導入液體系統及接近固體之表面，以於上達該系統尺 寸之巨觀規模傳送及於下達奈米位準之微觀規模中產生能 量、動量及質量之均勻分佈。一或多個傳感器可被耦合在 一夾具之背面、晶圓夾頭、基板基座、陽極、電極、角狀 物、環件、閘板、墊子、機架、或螢幕上，以將各種波導 入液體系統及接近固體之表面與固體-液體介面。該等傳 感器可包括一壓電磁性材料。所產生之各種波可包括單一 頻率、多數頻率、及/或一掃頻波之範圍，其可被個別地 或同時地控制。該電解質可包括一溶液、膠體、大部分液 體、或微粒懸浮液體，並可包括有或沒有金屬離子、或金 屬微粒、有機添加劑、或爲中性、酸性、或鹼性之水。被 震動之部份及/或該固體之表面可包括金屬、塑膠、陶 瓷、矽、及/或玻璃。該接近之固體表面可被組構成在數 奈米至數十微米之範圍中。該固體-液體介面可被組構成 -22- 200923134 在奈米之範圍中。該固體之表面可包括一或多個材料，並 可爲平坦的或包括由一奈米至100微米之範圍的部件尺 寸。 微固體攪動係較佳的，因爲其增進電鍍材料之質量及 能量傳送，以確保電鍍材料之品質。以小微小或奈米尺寸 設計之部件，大量機械式攪動不能有效率地獲得該質量/ 能量傳送，且意外之反應造成較低之沈積品質及供電效 率。在另一方面，微固體攪動能貫穿進入微部件及獲得最 佳化之質量/能量傳送。波發生器之更寬廣頻率範圍及傳 感器與電源能夠使用於電鍍系統之頻率及振幅條件最佳 化，該電鍍系統包括沈積材料、化學品、電鍍槽組構'及 基板。耦接至電鍍物體之傳感器及大量攪動硬體提供更多 路徑，以調節微固體攪動效率。 消除駐波節點之操作模型及其產生之非均勻性電鍍材 料分佈可被使用。微固體攪動亦打開該門件’以最佳化相 關應用，諸如物理及化學清潔、除氣等。最後’微固體攪 動能夠使固體奈米電鍍。攪動改善厚度之均句性、供電效 率、製造之快速運轉比率、以及由該電解質至該晶圓表面 的沈積材料之品質’特別是大於80微米之深通孔及具有 一高縱橫比的表面。 於一示範具體實施例中，如圖2-5所示’大致上利用 二種超音波傳感器。首先’一或多個（大致上二個）角狀 物係位在該電鍍槽之基座中。此外’ 一環件可被組構成設 置在該陰極（晶圓）及陽極間之電鍍室內。該環件或縮帶 -23- 200923134 大致上提供不銹鋼及複數凹槽。每一傳感器大致上提供一 最佳之頻率。一些頻率可增加該晶圓及該電鍍金屬間之黏 附力。軟體控制可被採用，以變化該等頻率，以最佳化該 製程，譬如，藉由掃除該等頻率，以消除駐波。攪動亦大 致上增加沈積物均勻性、質量傳送、沖洗效率、除氣等。 該等超音波傳感器亦可選擇性地被使用於通孔激活與該晶 圓及/或電鍍槽之清潔。爲了容納此震動，該晶圓夾頭可 使用塡隙片選擇性地被安裝在一支撐基座上，該等塡隙片 於震動期間提供一些“彈性（give ) ” 。 該等一或多個機電傳感器大致上被一能夠產生純周期 性及任意電波形兩者之電子波形發生器所控制。該等傳感 器大致上係藉由一或多個剛硬的桿件及/或圓形之環件連 接至一震動表面，該環件包圍該待處理之整個晶圓，並由 非磁性之材料所製成。該等連接桿構件及環件之質量係大 致上充分低的，以便不會使待運送至該晶圓附近之波形減 弱。這些桿件及環件係亦大致上充分剛硬的，以便精確地 運送該意欲之波形。該傳感器與連接桿可爲直接地位在該 晶圓本身下方，經由該晶圓支座、晶圓壓盤、或晶圓夾頭 運送聲能至該晶圓。於此特別之具體實施例中，藉由該傳 感器及桿件賦予至該晶圓支座之震動的能量向上運動經過 該晶圓支座進入該晶圓本身，造成該晶圓以一與該傳感器 之運動同步的方式垂直地移位。移位距離（波形幅度）之 範圍大致上在於1微米及2 0 0微米之間。 賦予震動的能量至該晶圓之第二機構係以一方式將該 -24- 200923134 連接桿及傳感器耦接至該晶圓支座，使得該運動之 平行於該晶圓表面。由於該等晶圓之易碎的本質， 器力量可被組構成不會直接地耦接至該晶圓支座， 耦接至該晶圓壓盤或晶圓夾頭，其依序運送該震動 至該晶圓本身。此聲能可被組構成由該晶圓之外徑 引導經過至該中心。用於能量之傳送的媒介係直接 該化學品至該晶圓表面，而給與用於最大電鍍之優 動。於此案例中，該震動的能量之效果係在該晶圓 方向中迅速地來回移位該晶圓，大致上具有於1 200微米間之振幅。 於實踐此揭示內容之第三機構中，藉由二分開 器的作用，該震動的能量係於兩軸心中同時地或於 程考量所指定之各種順序中賦予至該晶圓，一傳感 地安裝在該晶圓下方，且另一傳感器安裝至該晶 面。該精密之最佳震動頻率將隨著該晶圓大小及該 之待電鍍表面部件的尺寸而變化。所採用之頻率大 大約1 〇赫茲及大約21千赫茲間之範圍中。純周期 本身大致上不會在此揭示內容中被採用，以便在該 電鍍室內側避免諧波共振及/或駐波之建立。反之 異相的重疊頻率之混合物（‘白噪音’）可被組構 種周期性函數結合地採用。震動能量之應用可於該 作循環期間被連續地施加，或可被定期地發出脈衝 該剛硬的晶圓壓盤支撐結構大致上完成二功能 於晶圓經過真空、機械式連接、或其他方法之直接 方向係 該傳感 但反而 的能量 完全地 地經過 異的攪 平面之 微米及 之傳感 藉由製 器直接 圓之側 晶圓上 致上在 性頻率 封閉的 ，彼此 成與各 電鍍工 〇 :有利 附著， -25- 200923134 且爲充分剛硬的及爲一結構，使得該震動的能量以相同方 式被傳導遍及該整個晶圓（例如在此於該晶圓壓盤及該晶 圓中之撓曲應爲儘可能小的）。該連接器桿件或托架係位 於在該晶圓/晶圓壓盤及該傳感器之間。以此一使得該傳 感器之震動能量被如實地運送及具有最小衰減量地運送至 該晶圓之方式，該連接器桿件可被組構成牢固地連接至該 晶圓壓盤支座。該連接器桿件理想地將由具有低運動質量 的非磁性之機械式剛硬材料所製成’諸如、但不限於鈦。 包括至該傳感器及來自該傳感器之連接硬體的材料大致上 機械式剛硬的，且具有一低慣性。該硬體理想地亦應爲非 磁性及非電感性的，以便不影響該晶圓或基板上之電鍍沈 積物的品質。 該傳感器可被組構成牢固地連接至該連接器桿件或托 架之相向端子。以此一使得幾乎所有該傳感器之動能被引 導進入該晶圓壓盤卡具的方式，該傳感器可被組構成牢固 地支撐及緊固。磁致伸縮或壓電傳感器其中之一可被採 用。磁致伸縮傳感器典型地係在於大約〇伏特及大約1 〇 伏特之間操作。壓電傳感器典型地係在〇-4〇〇伏特之間操 作。當與一壓電傳感器作比較時，由於該磁致伸縮傳感器 之較大可靠性、該磁致伸縮傳感器之較高力常數、該磁致 伸縮傳感器之較低操作電壓、及該磁致伸縮傳感器對溫度 變化之較平滑的反應，磁致伸縮傳感器係一優於壓電傳感 器之較佳具體實施例。該傳感器可被組構成藉由一可程式 化之任意波形發生器所驅動，該發生器能夠供給大致上在 -26- 200923134 大約1赫茲及大約2 1,0 00赫茲間之頻率範圍中的周期性 及任意波形兩者。該波形發生器可被直接地程式設計或可 被當作該電鍍裝置控制系統的一成份之軟體工作所控制。 該傳感器可被倂入一遠較接近該晶圓壓盤、或直接在 該晶圓壓盤下方、或與該晶圓壓盤整合之配置中。然而， 藉由該傳感器裝置所產生之電場可能與該晶圓電鍍槽中之 晶圓上面的電場耦合，其可影響該晶圓電鍍製程之製程一 致性。耦合至該晶圓的震動能量之振幅及密度可藉由加入 或減去一或多個輔助傳感器至該主要傳感器所增加，該等 輔助傳感器被導向於該相同之軸心或沿著一與該主要傳感 器在一直角之軸心的其中之一。此揭示內容亦可被採用於 無電（自催化的）金屬電鍍中，以增加該電鍍比率、移去 由該待電鍍表面所逐步形成之氣泡、及建立一更均質的電 鍍沈積物厚度分佈。當該電鍍反應器單元係以電鑛化學組 成灌注，且該陽極電流係開啓（於電解質電鍍之案例 中）、或該反應器單元係在該最佳之製程溫度（於無電或 自催化電鍍之案例中）時，大致上於該晶圓電鍍製程期間 操作該等傳感器。 超音波傳感器之使用係提供用於各種電鍍及單元操作 運動學之固態能量的一態樣。此技術之優點達成一用於本 揭示內容之關鍵差別，因它們賦予一剛好超出電鍍功能上 之典型重點的寬廣範圍之功能。譬如，藉由本揭示內容提 供用於引導能量至適當表面之室設計，及得知什麼能量施 加至什麼製程與對於所需之結果如何以反饋、前饋、及預 -27- 200923134 測之製程控制適當地控制的製程專門技術。另外’該軟 體、測量、及得知如何使用D S P電子裝置管理複雜之傳感 器輸出而確保期待之波形與能量的控制專門技術、及即時 模式控制軟體被該揭示內容之具體實施例所促進。 又再者，前緣唯一固態指向性能量電鍍（DEP)之被 控制多頻率、多模式系統的本執行過程，係提供即時反饋 及前饋功能之能力。預測製程監視及利用該等聲波當作 “聲納”之下一步驟係偵測化學組成密度與條件以及金屬 厚度層次。應由本揭示內容被期待之使用此能量的主要製 程運動學係有效力的，因它們賦予一具有較少之化學組成 流動及使用的較低成本之電鍍槽，以及改善的電鍍比率與 產品品質。二寬闊範圍之頻率係感興趣的，雖然其他頻率 範圍可被使用。譬如，大約20至大約20千赫茲之頻率可 被用於一般之電鏟、柔軟之金屬、及攪動，在此大約500 千赫茲至大約2百萬赫茲之頻率可被用於細微的部件、細 微的間距、及晶圓清潔，很可能通孔電鍍。譬如，此後者 之頻率範圍可被用於邊界層攪動及在該晶圓位準之通孔激 活、通孔清潔及啓動、電鍍槽壁面及室清潔、化學組成攪 拌及遍及鍍液之微粒擴散、在金屬層之空化以開始用於下 一層電鍍、使用我們的分層電鍍製程混合分層之金屬層、 使用聲納測量方法測量凸塊高度或薄膜厚度、黏附力促 進、電鍍比率加速、及/或在通孔凹洞以及晶圓邊界層內 側之通孔電鑛擴散攪拌。 以下之摘要詳細說明藉由電鍍、傳感器、及大學團體 -28- 200923134 所做成之硏究及實驗，該大學團體使用高頻能量波尋求改 善之電鍍。這些結果最典型地涉及小面積及小樣本。本揭 示內容可被用來擴充這些結果超過一較大之200毫米或 3 00毫米晶圓表面，以及使用不同頻率控制。該方法包括 一均勻及可控制波形能量之應用-晶圓背面、正面、及橫 側地越過晶圓面與基於不同之晶圓金屬導體化及表面選擇 性地提供反饋。該方法亦可另包括測量該結果之波形及能 量，以確保其係可重複及測定的。該方法可另包括具有虛 擬或無負載的系統之自我測試，以確保適當之操作。 關鍵製程運動學係晶圓邊界層攪動及通孔充塡、電鑛 槽室表面清潔、及溶液中之微粒混合與懸浮。類似於用在 整流器控制之脈衝電鍍，一用於普遍的超音波波形及頻率 控制之較佳方式係使用脈衝形反應最佳化，並使用DSP控 制器與軟體以及反饋技術。新穎之DSP聲音技術可包括： 即時之連續超音波監視；傳感器及室間之簡化的機械式耦 接；能以低成本傳感器達成之較高性能；遠較大之同等帶 寬；不需要費力之阻尼，以縮短系統脈衝反應；應用至超 音波測量之新式DSP技術及偵錯接觸環技術。 圖4說明一用於本發明之示範電鍍計算器的側環件 400之透視圖。該側環件400大致上在一緊接至該待電鍍 基板之周邊的位置被定位於該處理容積丨〇2中。該側環件 4〇〇可在第一點401被附接至該電鍍槽1〇〇的一內部表 面’及在第二點402附接至一傳感器。複數孔口 403可被 形成進入該側環件400，以允許電鍍溶液流動流經該等孔 -29- 200923134 口’而亦防止在該側環件400中發生諧調之振動。圖5說 明該傳感器1 〇 8及該側環件4 0 0之定位。 造成電接觸至半導體晶圓之晶種層的機構典型係已知 爲一接觸環’該晶圓係在一電鍍反應器中處理，用於將金 屬沈積至該等晶圓裝置之工作表面的結果。晶圓典型係藉 由首先用其他方法施加一晶種層至該晶圓之表面而製備用 於金屬之電沈積，該表面接收金屬之隨後的電沈積。在該 晶圓的活性區域上方，該晶種層可藉由微影方法佈圖，以 使一晶種層之圖案暴露至該電解質。該光致抗鈾劑係由該 晶圓之外部邊緣移除，以提供一用於造成該電接觸之區 域。在該晶圓之外部邊緣的區域被稱爲該互斥區，且由該 晶圓之邊緣朝向該中心被限制至大約1 .5毫米環狀寬度。 該互斥區係在其中造成電接觸之區域。該互斥區可被密封 以免暴露至該電解質，以保護該接觸件/晶種層介面。與 該晶圓之其餘部份作比較，在該接觸件/晶種層介面之電 流強度密度係相當高的。如果電解質係存在於該介面，該 晶種層可被侵蝕，環繞著該接觸件建立晶種之島狀區，且 因此中斷經過該晶種層至該晶圓之其餘部份的傳導。 本揭示內容之晶圓接觸環大致上提供一或多個在下面 敘述之示範具體實施例。這些技術提供一較佳之互斥區密 封及一更堅固之電接觸件，但該晶圓本身具有更少之遮罩 (亦即該互斥區面積之最小化）。此單一單元接觸環密封 至容納該晶圓上之化學品’同時分開及保護在相同部份內 之電接觸件。 -30- 200923134 圖6顯示切開穿過其在一直立平面上之中心的反應器 之橫截面圖。該電解質之流體本體被容納於該晶圓及該凸 出的陽極之間。一電壓或電流電位係施加至該陽極’且在 該晶圓之接觸件被接地。該基板600係與該接觸環114連 通。該接觸環1 1 4包括一徑向地定位朝向複數電接觸件 602內部之環狀密封件601。該等電接觸件602之每一個 被定位，以電接觸該基板6 0 0的一外周邊部份’以施加一 電鍍偏壓至其上，以支持該電化學沈積製程。圖7係一取 自經過被包裝於圖6中所顯示之接觸環1 1 4次組件之詳細 的橫截面圖。圖8係圖7的一在該接觸件/密封件/晶圓介 面放大之詳細橫截面圖。圖9係一示範信息轉移通路 (buss )環件900之等角視圖，該環件將電流傳遞至該接 觸環114的接觸件之每一個，該等接觸件與該互斥區中之 晶圓晶種層咬合。 在操作中，該晶圓可被組構成將被強制地與一 〇型環 咬合，該0型環被容納於一剛好在該等接觸件內側之塡函 蓋中。該0型環對該已暴露晶種層之內側的晶圓表面造成 一密封，以防止電解質暴露至該接觸件/晶種層介面。該 等接觸件大致上包括彈簧加載式彈簧針（pogo pin )，於 此具體實施例中，該等彈簧針係市售之測試探針。頂抗一 容納在每一彈簧針內之彈簧的力量，該等彈簧針大致上容 許1毫米之軸向衝程。該彈簧針中之軸向衝程的順從性允 許該晶圓尋覓一頂抗該〇型環之密封位置，而仍然造成與 彈簧針/晶種介面之導電部份接觸。該圓環接觸次組件大 -31 - 200923134 致上包含4個信息轉移通路環件9 0 0 ’如在圖9 等環件大致上被徑向地封裝於4個個別90度象 個中。每一信息轉移通路900大致上提供9個徑 之彈簧針。總數3 6個彈簧針與該晶圓晶種層造 而繞著其360度圓周等距地隔開。該複數彈簧針 勻之電流分佈至該晶種層’並改善該金屬沈積之 性。該等個別之信息轉移通路9 0 0大致上係彼此 藉此提供一機構’以測量該4象限的每一個間之 變化性。然而，可提供複數信息轉移通路9 0 0， 測量之解析度。先前之撓曲設計係藉由諸方法所 等方法使此離散之高壓線與匯流排的連接及比較 不合實際。該等彈簧針之相當大衝程對該晶圓達 的電介面，造成該設計容忍多變的晶圓厚度、機 該晶圓密封抵靠著該〇型環之不確定位置、及在 用中所採用的經證實測試探針技術之重複使用。 環接觸件設計企圖有連續之接觸件，該等接觸件 硬不間斷的接觸件/晶種介面。這些設計缺乏該 面，該介面容忍上述幾何變化。 先前之圓環接觸件設計亦利用金屬撓曲部分 曲部分表現得像小懸臂式樑柱，而當被強制於小 封時’將其軸向順從性限制至少於1毫米之値。 之組裝方法或昂貴之製造方法以形成及切割該等 曲部分’利用金屬撓曲部分之環件具有較高的成： 圖顯示在一直立平面上切穿其中心的圓 所示，該 限之每一 向地排列 成接觸， 達成更均 厚度均勻 電絕緣， 阻抗中的 其增加該 製成，該 測量變得 成一順從 械容差、 一新穎應 先前之圓 造成一堅 順從的介 ，該等撓 尺寸之包 由於複雜 個別之撓 ^ ° 環接觸件 -32- 200923134 之橫截面圖。圖11係一取自經過該圓環接觸次組件之詳 細的橫截面圖’顯示該晶圓與一導電之彈性體接觸。該彈 性體被壓縮於該晶_及一集電環900之間。該等信息轉移 通路環件傳導電流至該彈性體中之導電元件的每一個。該 晶圓互斥區及導電元件係藉由該彈性體的不導電部份密封 隔離該電解質。圖1 2係圖1 1的一已移除該晶圓之詳細橫 截面圖。圖1 3係該導電彈性體1 2 〇 〇的一片段之等角視 圖。導電元件係於〜匹配該晶圓半徑之徑向圖案中同時模 製在不導電彈性體內側。 於操作中’該晶圓大致上被強制地與該導電彈性體 1 2 00咬合。該不導電部份對該已暴露晶種層之內側的晶圓 表面造成一密封’以防止電解質暴露至該導電元件/晶種 層介面。當於該晶_及該等信息轉移通路環件9 0 0之間擠 壓時，該導電及不導電彈性體之結合係容許軸向順從性。 彈性體中之軸向衝程的順從性允許該晶圓尋覓一頂抗該不 導電部份之密封位置，而仍然造成與該彈性體介面之導電 部份接觸。該圓環接觸次組件大致上包含複數分段式導電 彈性體1 200。每一分段可被組構成排列環繞著該晶圓之圓 周，以提供360度之密封接觸件。該複數導電元件達成更 均勻之電流分佈至該晶種層，並改善該金屬沈積之厚度均 勻性。 密封元件與該彈性體的導電元件之整合消除接觸件加 上密封件之軸向尺寸堆疊，藉此由3毫米至2毫米地減少 該圓環接觸件之軸向高度，這允許流體攪動元件被放置成 -33- 200923134 較緊靠接近該晶圓表面，而不會摩擦在該信息轉移通路環 件900之頂部上。其亦消除接觸件加上密封件之徑向尺寸 堆疊，藉此減少造成該密封及接觸至一狹窄互斥區的邊界 內之晶種層所需的徑向環狀尺寸。該整合式密封件/導電 彈性體大致上提供一工業可用之零組件，並已證實用於平 板顯示器技術中之電接觸件應用的可靠性。因此，一金屬 纖維、尖銳或鈍的金屬尖端（大致上藉由抽拉、模製、蝕 刻、或機械加工所製成）可被組構成嵌入在彈性體中，與 該等金屬尖端形成一接觸/密封組件及表面，該等金屬尖 端稍微伸出、或沉入、或在該彈性體之相同表面位準處， 以於該彈性體及該晶圓表面之間獲得一防液體之密封、隔 離，且於金屬尖端及該晶圓晶種金屬之間獲得一良好的電 接觸件。該尖端選擇性地提供銅、銅鈹合金、鈦、或鋼， 且可選擇性地被塗以黃金、白金、或鈀。該彈性體選擇性 地提供聚矽氧、氟化橡膠、聚苯乙烯、或聚丙烯。該嵌入 式接觸/密封組件可被組構成藉由模製、射出、擠出、或 機械加工所製成。由晶圓邊緣朝向晶圓中心之電接觸件寬 度可被組構成大約是0.5、1、1·5、2或2.5毫米，或於大 約該範圍中之任何寬度。由晶圓邊緣朝向晶圓中心之密封 件寬度可被組構成大約是1、1.5、2、2_5、3、3.5、4、 4.5或5毫米，或於大約該範圍中之任何寬度。由彈性體 表面伸出或沉入該彈性體表面之尖端大致上係大約0、 0.1、0.2、0.3、0.4、0.5或0_6毫米，或於大約該範圍中 之任何長度。該等尖端大致上係均勻的’具有少於大約 -34- 200923134 0 · 2毫米的變動。該彈性體表面起伏可被組構成均勻的， 且少於大約〇.2毫米的變動。該等尖端、彈性體及金屬之 總厚度可被組構成在大約2至8毫米之範圍中。該彈性體 之相當大的軸向順從性對該晶圓達成一順從的電介面，造 成該設計容忍多變的晶圓厚度、機械加工容差、該晶圓密 封抵靠著彈性體之不確定位置。 先前之圓環接觸件設計企圖有連續之接觸件，該等接 觸件造成一堅硬不間斷的接觸件/晶種介面。這些設計缺 乏該順從的介面，該介面容忍上述幾何變化。先前之圓環 接觸件設計亦利用金屬撓曲部分，該等撓曲部分表現得像 小懸臂式樑柱，而當被強制於小尺寸之包封時，將其軸向 順從性限制至少於1毫米之値。由於複雜之組裝方法或昂 貴之製造方法以形成及切割該等個別之撓曲部分，利用金 屬撓曲部分之環件具有較高的成本。 於該揭示內容之另一具體實施例中，提供被半蝕刻或 線切割加工EDM接觸件及密封環。此具體實施例係半微 型蝕刻或線切割加工EDM微型蝕刻金屬接觸件及密封環 之製造’以最佳化用於半導體及微電子技術之電鍍接觸件 及密封件。改善之性能包括用於電鍍基板上之電流的均勻 分佈及低電阻抗之最佳化接觸件；完全密封，而沒有化學 及電滲漏，與高壓力耐受性及光致抗蝕劑與密封材料之低 容許變形；藉由密封件幾何形狀使流體動力學之影響減至 最小；及高效能之流體動力學與電鑛反應運動學。現存方 法利用機械及模製製程之傳統技術，以製成接觸件及密封 -35- 200923134 零件。 半導體及微電子技術工業已經進展至奈米技術紀元之 早期階段’諸裝置之尺寸及待處理之部件尺寸正持續縮 小，造成接觸及密封越來越困難。在製造用於電鍍零件之 小型接觸件及密封件中，半微鈾刻或線切割加工ED Μ微 型製造大致上利用MEM S技術，其能夠標準化地快速製造 接觸件、密封件、及組合，如此建立零件之精確尺寸及偏 差之低容差、接觸件之高電導性、電流之均勻分佈、更少 之密封區域、密封件之低輪廓、及流體之高紊流。 圖1 4顯示該尖端於蝕刻之前的槪略橫截面圖。圖i 5 顯示在該接觸尖端之被蝕刻微型接觸件的一槪略橫截面 圖，該接觸件大致上利用MEMS技術藉由與或未與另一金 屬或合金排成一列之金屬或合金所製成。圖16顯示一具 有隔離密封件之包覆或層疊層的被蝕刻微型接觸件之槪略 橫截面圖。幾何形狀及尺寸可能有不同變化。圖1 7說明 一示範接觸環114之透視圖，該接觸環具有複數由該處徑 向地朝內延伸之電接觸突指17〇〇。該等接觸突指1 700大 致上被組構成電接觸一待電鍍基板之周邊或邊緣部份。圖 17亦說明該集電環900，其被電組構成供電至該接觸環 114° 用於該接觸環1 14或該集電環900之包覆材料可選擇 性地包括 PVDF(聚偏二氟乙稀）、聚氯乙稀（聚乙 烯）、或諸如氟化橡膠之材料。此具體實施例之接觸件提 供接觸之連續性，確保均勻之電流分佈。一小型或銳利地 -36- 200923134 設計之電鍍接觸尖端能貫穿導電金屬或合金之表面氧 或另一絕緣層，以造成低接觸阻抗。該接觸件能使用 之MEMS技術製成，以蝕刻微型部件；或使用線切割 EDM技術，以機械加工微型部件；及塗覆/層疊技術 於接觸件及密封件之準確、精確、及具成本效益的製 密封件之低輪廓大致上允許該基板表面上之均勻的流 動及擴散層厚度分佈之調節。該精確密封大致上允許 之較高容差及改善之密封及預防滲漏。更剛硬材料之 造成該接觸件及密封件較難以變形，而仍然允許撓曲 在圖16所示，於操作之前，該接觸環可被組構成降 複數呈圓形配置之撓曲梳狀突指，以與該電源造成 觸。該等突指僅只稍微彎曲。當接觸件被製成時，該 尖端大致上磨擦每一突指，藉此移去該表面上之任何 物及提供改善之電接觸件。該系統係因此自行清潔的 圖1 9說明本發明之示範多金屬電鍍方法的一 圖。該方法在步驟1 900開始及持續至步驟1 920，在 基板被定位在電鍍槽之處理容積中。在步驟1 902，該 大致上被定位在一陰極的基板支撐構件上，該基板支 件亦可於該處理容積中提供該基板之旋轉。一旦該基 定位在該基板支撐構件上，該電鍍槽可被關閉或密封 準備用於以電解質溶液充塡。在步驟1904，該處理容 以被組構成將第一金屬層電鏟至該基板上之第一電鍍 充塡。譬如，該第一電鍍溶液可爲一被組構成支持銅 積之溶液。在步驟1 906，一電偏壓可被施加於該陰極 化物 可用 加工 ，用 造。 體流 壓力 選擇 。如 低至 電接 接觸 氧化 〇 流程 此一 基板 撐構 板被 ，而 積能 溶液 電沈 的基 -37- 200923134 板支撐構件及一陽極組件位置之間，該陽極組件位置與被 支撐在該基板支撐構件上之基板呈平行之方位。該電偏壓 有利於該電沈積製程，並可包括在該電沈積領域中習知之 向前及顛倒偏壓、脈衝、及其他波形。大致上，該陽極組 件及該基板支撐構件兩者被容納在該電鍍槽之處理容積 內，且浸入在其中所容納之電鍍溶液中。 一旦該電偏壓已施加達一指定之時期，則用於該第一 金屬之電鍍製程大致上係完成。該方法接著持續至步驟 1908，在此該第一電鍍溶液可由該處理容積排出。一旦該 電鍍溶液被排出，該處理容積（與保持定位在該處理容積 中之基板）可在步驟1910藉由導入一清潔溶液被沖洗或 清潔。於本發明的一示範具體實施例中，在步驟1 9 1 0所 導入之清潔溶液可爲去離子水。一旦該清潔步驟被完成， 該清潔溶液亦可由該處理容積排出。該示範方法可另包括 諸如氮或氬的惰性氣體之導入該處理容積，以防止沈積在 其上面的基板或金屬層之氧化，如在步驟1 9 1 2所注意到 者。該等發明家注意到雖然該惰性氣體之導入遍及該整個 電鍍製程將爲有益的，該惰性氣體於以一電鍍溶液排出、 沖洗、及再注滿該處理容積之製程期間將爲特別重要的， 因於這些製程期間，該基板未浸入一電鍍溶液中。 在步驟1914，第二電鍍溶液可被導入該處理容積。該 第二電鍍溶液可被組構成支持諸如鎳的第二金屬之電沈 積。在步驟1 9 1 6 ’第二電偏壓可被施加在該陽極組件及該 基板之間’以有利於將該第二金屬電鍍至該基板上。一旦 -38- 200923134 該第二金屬之沈積已完成’該處理容積可再次排出經沖洗 之電鍍溶液’而該基板仍然被定位在該處理容積中，如藉 由步驟1 9 1 8所注意到者。再者，假如想要，則該處理容 積亦能以一惰性氣體灌注，如在步驟1 9 1 2。如果第三金屬 層將被沈積，該前述之製程可被重複。然而，如果該電鍍 製程在該第二金屬層之後結束，該基板亦可在步驟1918 由該處理容積移去，且該示範方法在步驟1920完成。 藉由用此揭示內容的一般或特別地敘述之反應物及/ 或操作條件替代那些在該等前述範例中所使用者，該等前 述範例能類似順利地被重複。雖然該揭示內容已特別參考 這些較佳具體實施例詳細地敘述，其他具體實施例能達成 相同之結果。對於那些熟諳此技藝者，本揭示內容之變化 及修改將爲明顯的，且其係意欲涵蓋所有此等修改及同等 項。在上面及/或於該等附件中、與該對應申請案所引用 之所有參考案、申請案、專利、及公告的整個揭示內容， 係以引用的方式倂入本文中。 額外地，前文簡述本發明之數個示範具體實施例的特 色’以致那些熟諳此技藝者可較佳了解本揭示內容之各種 態樣。那些熟諳此技藝者將了解它們可輕易地使用本揭示 內容’當作一用於設計或修改其他製程及結構之基礎，用 於執行相同之目的及/或達成在其中所介紹之具體實施例 的相同優點。那些熟諳此技藝者將亦了解此等同等結構不 會由本揭示內容之精神及範圍脫離，且它們可對該等揭示 之示範具體實施例作成各種變化、替代、及修改’而不會 -39- 200923134 由本揭示內容之精神及範圍脫離。 【圖式簡單說明】 被倂入及形成該說明書的一部份之所附圖面說明本揭 示內容之數個具體實施例，且隨同該敘述，具有說明該揭 示內容之原理的作用。該等圖面係僅只用於說明該揭示內 容的一較佳具體實施例之目的，且不被解釋爲限制該揭示 內容。 圖1 A說明本發明之示範電鍍計算器的頂部透視圖； 圖1 B說明本發明之示範電鍍計算器的側面剖視圖； 圖1 C說明本發明之示範電鍍計算器的側面剖視圖； 圖1 D由一底部透視圖說明本發明之示範電鍍計算器 的側面剖視圖； 圖1 E說明本發明之示範化學品供給模組的一側視 圖； 圖1 G說明本發明之示範電鍍計算器的側面及透視 圖； 圖1 L說明本發明之示範電鍍計算器的側面剖視圖； 圖1 Μ說明一用於本發明之電鍍計算器的示範控制架 系統之局部分解透視圖； 圖2說明本發明之示範電鍍計算器的簡化側視圖； 圖3說明本發明之示範電鍍計算器的示範傳感器之底 部透視圖； 圖4說明一用於本發明之示範電鍍計算器的側環之透 -40- 200923134 視圖； 圖5說明一'用於本發明之不fe電鑛I十算器的安裝板、 傳感器、及側環之透視圖； 圖6說明本發明之示範電鍍計算器的一部份之詳細剖 視圖； 圖7說明本發明之示範電鍍計算器的示範接觸環之頂 部透視圖； 圖8說明本發明之示範電鍍計算器的示範接觸環之局 部剖視圖； 圖9說明本發明之示範電鍍計算器的接觸環之一部份 的透視圖； 圖1 〇說明本發明之示範電鍍計算器的接觸環組件及 電鍍槽之側面剖視圖； 圖1 1說明本發明之不範電鍍計算器的示範接觸環之 側面剖視圖； 圖1 2說明本發明之示範接觸環的一底部透視及局部 剖視圖； 圖1 3說明本發明之示範接觸環的一底部透視圖； 圖1 4說明一用於本發明之不範電鍍計算器的接觸環 之示範接觸構件； 圖1 5說明一用於本發明之不範電鍍計算器的接觸環 之示範接觸構件； 圖1 6說明一用於本發明之示範電鍍計算器的示範接 觸構件組件； -41 - 200923134 圖1 7說明本發明之示範接觸環組件的一透視圖； 圖1 8說明藉由本發明之電鍍計算器的具體實施例所 產生之二示範凸塊測試；及 圖1 9說明本發明之示範方法的流程圖。 【主要元件符號說明】 1〇〇 :電鍍計算器 102 :處理容積 104 :基板支撐構件 1 〇 6 :歧管 1 〇 8 :傳感器 1 1 0 :陽極 1 1 0 a :陽極片段 1 10b :陽極片段 1 10C :陽極片段 1 1 0 d :電源端子 I Π :感測器 II 2 :驅動機件 1 1 4 :接觸環 129 :化學品供給模組 1 3 0 :儲存槽 1 3 2 :裝載槽 1 3 4 :過濾器 1 3 6 :加熱器 -42 - 200923134 138 ： 140 ·_ 142 ： 15 0： 15 1： 152： 15 3： 154： 170： 17 1： 172 ： 173： 174 ： 175： 400 ： 401 : 402 ： 403 ： 600 ： 60 1： 602 ： 900 ： 1200 1700 歧管 流體閥 流體幫浦 作動器 直立之軸心 箭頭 平臺 堅硬的構件 控制架 控制系統 基板插入窗口 機罩 內部容積 化學品供給槽 側環件 第一點 第二點 孔口 基板 環狀密封件 接點 信息轉移通路環件 :彈性體 :接觸突指 -43200923134 IX. Description of the Invention [Technical Fields of the Invention] The following disclosure relates to a method and apparatus for automatically plating a plurality of metal layers or complex structures using a single plating apparatus. [Prior Art] Conventional electroplating systems generally utilize a plurality of different electroplating baths, each of which contains a plurality of different electroless plating baths that are plated to form a particular metal or alloy. The plurality of plating baths are generally part of a plating system comprising a plurality of plating baths, each of which is configured to perform a particular operation, such as acid etching/cleaning, rinsing, drying, annealing, metrology, electroplating, and the like. Traditional plating systems require a large footprint in an expensive clean room space. In addition, conventional plating systems and plating baths are generally a single chemical bath, that is, a plating bath uses a single chemical process and phenomenon to plate a single metal material. Thus, complex electroless plating solutions and processes must be used for alloy plating, and deposition of different individual metal layers is difficult and requires continuous use of multiple plating baths. The use of electroplated alloys from most electrowinning tanks to different metal layers presents several disadvantages. For example, the process of transferring one substrate to another by one plating bath increases the likelihood of oxidation formed on the substrate. If it is not removed before the subsequent layer is deposited, oxidation can cause defects in the electroplated layers, and removal of the oxide layer adds a cleaning and rinsing step to the electroplating process. Each of these processes increases the processing time for a substrate and thus inherently reduces the throughput of the plating system. - 5 - 200923134 SUMMARY OF THE INVENTION The present disclosure provides a process plating calculator that is rapidly changing chemical baths and is designed to provide customers with more flexibility in demanding and higher availability. This disclosure provides a cost effective plating tool and layer process for semiconductor back end assembly. The compact electroplating deposition process tool of the present disclosure provides a more cost effective way to manufacture low cost interconnects including, but not limited to, those for flip chip. Tools that can be fabricated using a unique single-wafer, multi-metal process slot generally include the primary operational advantages of a single tank for electroplating process conditions that outperforms its competitors' need for much more space and maintenance. The Process Knowledge Department is also largely embedded in the soft introduction and procurement of simple and high-yield joint capabilities. This plating calculator should be able to make most of the companies that want to develop and provide CSP coverage, as well as those with the parameters of the supplier. Furthermore, the combination of improved process technology and a novel small-scale electroplating calculator that closes the difficult content of the introduction and support of flip chip bonding technology is not limited to the ability to continuously and multi-metalize multi-metals. It also replaces the traditional plating tank to the plating tank and the storage tank to a storage with a more powerful single tank mourning. In this way, it is possible to eliminate the need to move through various electroplating chemical processes, and the purpose of using the metal is reliable. Generally, it is very useful for high-performance, technically useful, and the metal process can be more physically/hard-crystal and wafer-carrying. Sex sinking tools are reduced. The present disclosure discloses a need for repeated wafer plating calculations for wafer wafer transfer. -6- 200923134 seeks to reduce the need for substrate transfer related robots, thereby reducing mechanical costs, footprints, and improving machine utilization. This single-slot approach facilitates and improves production by minimizing wafer processing and, more importantly, enables a wide range of lead-free solders to be used in single-slot platforms. In addition, a process that would be used with these tools for encapsulating powders and solder bumps was developed. Additional work continues to develop high-performance bumps and interconnects' This interconnect is expected to improve thermal and electrical conductivity in copper and solder alloys. This will focus on the important high performance computing and handheld processor market segments that are requiring more thermal interconnects. The scope, advantages and novel features of the present disclosure, and further scope of applicability will be set forth in part in the detailed description that follows, and will be made in part for those skilled in the art. Obviously, or can be learned by the practice of the disclosure. The object and advantages of the disclosure can be realized and obtained by means of the tools and combinations particularly pointed out in the following description. A specific embodiment of the disclosure may provide an electroplating calculator having a plating bath provided with an internal processing volume configured to accommodate a plating solution for an electroplating process; a plating bath mounting platform, at least in the Connected to an actuator at one point and to a movable attachment member at a second point; a rotatable substrate support member positioned in the processing volume and having a longitudinally extending shaft from which the shaft a non-substrate engagement side of the support member extends; a sensor coupled to the longitudinally extending shaft and configured to impart energy to the substrate support member via the shaft; and at least one detachable chemical module The treatment volume is in fluid communication. 200923134 The specific embodiment of the disclosure may further provide a method for electroplating a plurality of metal layers onto a substrate in a single electrowinning bath without moving from the plating bath between the first and second metal deposition steps Go to the substrate. The exemplary method can include positioning the substrate on a substrate support member of a cathode in a processing volume of the plating bath; filling the processing volume with a first plating solution, the first plating solution being grouped to form the first metal a layer is plated onto the substrate; a first plating bias is applied between the substrate and an anode assembly positioned in the processing volume to electroplate the first metal onto the substrate; and the first portion is discharged from the processing volume A plating solution. The exemplary method may further comprise injecting the treatment volume with an inert gas to prevent oxidation of the surrounding oxygen to maintain the substrate positioned in the treatment volume; rinsing the treatment volume with deionized water; filling the treatment with the second plating solution a second electroless solution is configured to plate a second metal layer onto a substrate that is retained in the processing volume; and apply a second plating bias between the substrate and the anode assembly to A second metal is electroplated onto the first metal layer. Embodiments of the invention may further provide a plating calculator for electroplating a plurality of different metal layers onto a substrate in a single electroplating process. The electroplating calculator may include a mechanism for positioning the substrate on a substrate supporting member of a cathode in a processing volume of the plating bath; and a first chemical supply mechanism for plating the first metal layer into a group to a first plating solution on the substrate is filled with the processing volume; and a mechanism for applying a first plating bias between the substrate and an anode assembly positioned in the processing volume to electroplate the first metal to On the substrate. The electroplating calculator may further comprise a mechanism for discharging the first plating solution from the processing volume; the gas supply device -8-200923134 is configured to infuse the processing volume with an inert gas to prevent the surrounding oxygen oxidation from remaining positioned a substrate in the processing volume; a mechanism for rinsing the processing volume with deionized water; a second chemical supply mechanism for charging the processing volume with a second plating solution, the second plating solution being configured %—metal layer electrowinning to a substrate that is positioned in the processing volume; and mechanism for applying a second plating bias between the substrate and the anode assembly to electroplate the second metal to the first On a metal layer. [Embodiment] It should be understood that the following disclosure provides many different specific embodiments, or examples, which are used to provide various features of various embodiments. Specific examples of components and configurations are described below to simplify the disclosure. These are of course only examples and are not intended to be limiting. In addition, the present disclosure may repeat reference numbers and/or letters in the various examples. This repetition is for the sake of brevity and clarity, and does not in itself indicate the various specific embodiments and/or inter-structures discussed. Furthermore, in the ensuing description, forming the first component over the second component or on the second component can include embodiments in which the first and second components are formed in direct contact and can also include In particular embodiments, additional components may be formed to intervene in the first and second components such that the first and second components may not be in direct contact. Finally, the exemplary embodiments presented below can be combined in various ways, that is, any element from a particular embodiment can be used in any other embodiment without departing from the invention. 1A-1M illustrate various exemplary embodiments of the closed plating bath of the present invention. The 200923134 embodiment can be used to plate wafers of any size including, but not limited to, 2 mm or 300 mm wafers. The closed cell technology of the present disclosure provides the end user with reduced wafer breakage and high speed plating not found in conventional wafer plating systems. The closed slot generally provides an embedded majority positive anode. This feature provides excellent plating uniformity with energy, mechanical and fluid management kinematics. Some of the features and advantages of this disclosure may include: manual or automated (calendar feeding) wafer processing automation; GUI interface; programmable process parameter control and custom parameter organization; holding up to six specific metal containers a chemical farm (Farm); a single-slot spray anode system that can include four or six zones of programmable, insoluble anodes; the zones can include concentric rings, each concentric ring having an independently programmable Voltage; high-speed plating, maximizing wafers daily, with a deposition ratio of up to 6 μm/min for copper and a deposition ratio of up to 4.5 μm/min for tin/lead, with a deposition ratio of up to 4.5 μm/min Lead-free tin/silver; most metal capabilities to meet several interconnect requirements (multi-stack metal) in a single cell; rapid chemical conversion; embedded energy and fluid agitation for maximum kinematics in the single cell; Embedded chemical jet with programmable energy system for kinematic control. The single closed cell reduces evaporation and eliminates wafer breakage, which can occur when the wafer is transferred to an additional rinse and plating station in a multi-station process or system. This small tank processing volume provides more precise process control and requires less water for flushing so that a single tank can be used. The closed trench also provides excellent thickness uniformity across the wafer: for copper, tin/lead, and lead-free tin/silver <10%, proven particle plating and alloy plating are possible -10-200923134's 'low cost ownership, and a small manufacturer's footprint: for 200mm wafers: present: 1. 32 meters wide x. 99 meters deep xl. 88 meters high (according to the plan: 1 meter wide x l meters deep X2. 2 m high), and used for 300 mm crystal: Current: 1 . 5 meters wide X 1 . 5 meters deep X 1 . 8 8 meters high (according to the plan: 1.3 meters wide xl. 3 meters deep x2. 2 meters high). The single closed tank provides a quantifiable business model, Quantitative capacity model for maximum utilization, Rapid processing and chemical transformation, Handling the elasticity of most structures, Leading edge production utilization ratio and most metal plating. The single closed cell provides wafer level processing for wafer bonding and utilizes a metal sealing ring. The sealing rings are, for example, fabricated in MEMS devices, Solar battery, And semiconductor processing aspects including glass through-hole (through-hole) ore are beneficial. for example, 1A illustrates a top perspective view of an exemplary plating calculator 100 of the present invention, And Figures 1 and 1 C illustrate a side cross-sectional view of an exemplary plating calculator 1 〇 。. Figure 1 illustrates an exemplary plating calculator 100 in a closed or processing position, And Figure 1C illustrates an exemplary plating calculator 100 in an open or substrate loading position. The plating calculator 100 can generally include a processing volume 102. It is grouped to house a processing chemical composition and a substrate to be electroplated therein. A substantially planar substrate support member 104 is substantially formed to support a substrate for processing thereon. And the substrate supporting member 104 is also rotatable about an axis that is always standing. And in some exemplary embodiments, The substrate supporting member 104 can be inclined by a horizontal plane. The electroplating calculator 1A can also include a fluid transport manifold or valve block 106. It is grouped to transport the selected chemical composition, Deionized water, And other liquids to the plating calculator process volume 102. The exemplary processing calculator 100 can also include at least one bottom sensor 1 〇 8, -11 - 200923134 It is configured to impart energy to the substrate supporting member 104. The energy imparted to the processing calculator 1 by the sensor 108 is substantially a sound wave type energy, That is, ultrasonic or mega-frequency ultrasonic. In a specific embodiment of the invention, The energy produced by the sensor 108 can be approximately 40 kilohertz. This energy is transmitted to the substrate via the driver member 112. The processing volume 102 can include an anode that is substantially positioned in a parallel relationship with the substrate to be plated, substantially supported on the substrate support member 104, And the substrate supporting member driving member 1 12 is rotatably supported by the substrate. The driving mechanism 1 12 and the substrate supporting member 1 〇4 can be lowered (as shown in Fig. 1C). To allow a substrate to be loaded onto the substrate support member 104, as shown in a partial cross-sectional view and a perspective view of FIG. A contact ring 114 is used to electrically contact the periphery of the substrate to be plated, And providing an electrical bias to it, To support an electrochemical deposition process. The contact ring 114 can generally include a plurality of electrically conductive fingers that are radially positioned about a half of a rigid and substantially flat ring member. The positioning of the conductive fingers is substantially configured to electrically contact a peripheral portion of the substrate to be processed in the plating calculator 100. An electrical bias is provided to support the electroplating process to the substrate. Various configurations and exemplary embodiments of contact rings that can be used in the exemplary electroplating calculator 1 本 本 of the present invention are discussed further herein. Figure 1D shows the plating calculator anode 110, It is positioned in the upper portion of the processing volume 102. The anode η〇 generally includes a plurality of concentrically positioned conductive elements, The components can be individually biased at a selected electrical power. It is advantageous in the electroplating calculator to facilitate the deposition of a uniform sentence over the surface of the substrate to be electroplated. The anode 1 1 0 -12- 200923134 is substantially positioned just above the contact ring 1 1 4 , And more particularly the anode 1 1 〇 is positioned substantially immediately above the central aperture through the contact ring 1 1 4 . in this way, When a substrate to be plated is positioned in the controller 1 and brought into electrical communication with the contact ring 114, 1 1 0 will be positioned substantially immediately above the substrate to be plated. Figure 1 E illustrates a side view of an exemplary removable chemical for use in the present invention. The chemical supply module 1 29 generally includes a storage tank 130, Loading slot 132, Fluid manifold 138, At least one 1 40, And a selectively actuated fluid pump 1 42. The load may also include a fluid heater 136 and a fluid filter 134. in, The chemical supply module 1 29 can be connected to a plating 1 〇〇, To support a part of the electroplating process. The fluid contained in the chemical supply mold can be grouped to plate a particular metal. An additional chemical supply module 1 29 can also be coupled to the plating calculation. And can be grouped to supply a different chemical solution to the electric device 100, Thus a different metal can be electroplated on the substrate. If the special plating process performed in the plating calculator 100 requires a different process to deposit different metals on a single substrate, Each of the calculators 100 may be in communication with one or more chemical supply modules 1 2 9 to supply the supply module 1 29 substantially to the large volume of loading from the bulk storage tank of the mass storage tank. The groove 1 3 2 (the size of which is approximately 1 〇 2 of the processing volume of the plating calculator 100), Here the solution is filtered and shipped before being sent to the plating calculator 100. Yes, The formed electroplating meter of the anode to the module main fluid storage valve slot 1 32 is calculated in the operation calculator group 129 to the substrate 100 plating, To be a single plating meter. The chemistry 130 will be able to be set to the same capacity to be heated -13- 200923134 for a special process, This disclosure is generally for each chemical composition, Separate grain tanks (module 12 9) are provided for the waste as appropriate. Each tank may include a heater 'for heating the chemical composition to an optimum process temperature. The containers can be constructed to be easily replaceable and/or refillable. The used chemical composition can be grouped into a treatment, Recirculation into the appropriate tank, such as after filtration. An optional pump heater filter module is disposed between the process slot and the slot to enable the slot to be replaced by a "plug and play" system. One or more selective metrology systems are utilized in an immediate feedback loop for automatic process loop control. Such systems may include conductivity (eg RTD), Sonar, The best level of sensing, And consumption forecast. A thermoelectric battery (TEC) can be used; This not only measures the thickness of the deposit, However, it can also be used to fine tune (heat or cool) the process temperature. Conductive sensor to ensure the cleanliness of different chemicals, Prevent cross-contamination and estimate degradation of these chemicals. A tank pressure monitor allows for a full rate of charge, To control chemical flow and overflow, The pressure uniformity in the tank is monitored in situ. A large number of plating conditions that are optimized for wafer temperature monitoring. A rechargeable sensor can be selectively used. Resistivity contacts provide instant feedback for optimum plating performance. The film conduction sensing in the tank determines the cleanliness of the inner wall surface of the groove. An integrated optical curvature measurement (on-line stress test) can be used to monitor the distribution across the crystal circle. Consumption model establishment can be used to monitor this power usage, To adjust the chemical properties and provide immediate feedback to the system between the wafers being plated. And an electrochemical oxide indicator provides an impedance finger at the wafer/solution interface -14-200923134. In a single room, Multi-metal stacking can be performed. In one such example, A copper layer can be deposited, Carry out a flush, A nickel layer is then deposited, And finally depositing a palladium cover, All processes are not removed from the groove by the groove. Although these steps are typically performed continuously, Different metals can be selectively deposited simultaneously. The slot generally provides the ability to be tilted and/or vibrated. In a specific embodiment, The trough is tilted in the first direction and filled by the bottom. The incoming chemical composition then purges all of the gas out of the tank as it fills. During operation, The slot is substantially vibrating (regularly or randomly), Provide mechanical agitation, Used to increase plating uniformity and eliminate standing wave nodes. The slot also vibrates substantially during flushing. If necessary during plating, The slot can be tilted at any desired angle or angle. Promotes gas and bubble removal. The slot is substantially inclined in the second direction, To discharge the flushing waste, This ensures complete discharge and simplification to the chemical composition of the tank. Figure 1G illustrates a side and perspective view of an exemplary plating calculator 100 of the present invention. The top right side perspective view of the plating calculator 1 shows a substantially planar platform 153, The plating calculator 100 is mounted on the platform. An actuator 150 is coupled at a first end to a rigid member 154 that is not coupled to the platform 153. And connected to the platform 153 at the second end. In the side of the platform 153 opposite the connection point of the actuator 150, The platform 153 is supported at a special point. The point has an axis 1 1 1 which is always standing. in this way, When the platform 1 5 3 bypasses the axis 1 5 1 of the pivot point, The actuator 150 can vibrate the platform 153 in the direction indicated by the arrow 152. This vibration provided by the actuator 150 can be used to apply a large amount of motion to the shovel calculator 100 for -15-200923134. This large amount of motion can be used to facilitate the discharge of fluid from the plating calculator 00. And used to further agitate or agitate the chemical components in the plating solution contained in the treatment volume 02. In other specific embodiments of the invention, Additional pivot points and/or actuators can be used to selectively tilt the platform i 5 3, For example, it is advantageous to adhere the smallest bubbles to the surface of the substrate. The wafer chuck or support member 104 can be rotated during operation to shear the chemical composition, To increase uniformity, And/or rotate after processing, To dry the wafer (in this case, It is roughly rotated at approximately 1,500 rpm.) The collet 1〇4 is substantially rotated by being inserted into a hollow shaft rotary motor. In this particular embodiment, The wafer is placed on the chuck. The collet 104 moves up slightly upright, Contact for processing is provided between the wafer and the contact ring 112. For washing, The collet 104 is lowered for rotation. This process also ensures that the contact ring 1 14 is also flushed. Process control for increased 'this chemical composition may pass through holes or grooves in the anode 110, Or alternatively, one or more openings are ejected through the ultrasonic sensor ring (described below). In any case, The chemical composition to be sprayed can be recycled from the chamber after initial use. The distance from the anode to the wafer (cathode) can also be adjusted from approximately 〇 8 8 to approximately 1 · 8 . Chasing can be done manually via a mechanical mechanism such as a thumb screw' or automatically via a programmable electromagnetic switch. The anode segments are roughly rectified by multiple channels " Controlled, The rectifier controls the distribution of each channel. This anode provides the ability to be plated with a forward current' and the reverse plating enhances the morphology of the surface of the bump. Figure 1L illustrates a side cross-sectional view of the upper portion of the processing tank of the exemplary plating calculator 100 of the present invention. The anode 110 may include a plurality of anode segments 1 10a, 1 1 Ob, And 1 10c. The anode segments generally comprise a conductive member, Each component is connected to a separate power terminal 1 1 〇d. in this way, Each of the individual anode segments 110 can be individually powered and controlled. The upper portion of the processing tank 1 〇 亦可 may also include one or more sensors 1 1 1 . In addition, The electrolyte solution used in the electroplating process can also be circulated through the processing volume 110 in a manner. Forcing the electrolyte through the holes formed in the anode 110, Orifice, Or groove. in this way, The electrolyte used in the electroplating process can be forced through the anode 110 toward the substrate to be electroplated in a manner similar to a high pressure nozzle. Figure 1M illustrates a partial exploded perspective view of an exemplary control rack or rack system 170 for use in the electroplating calculator 100 of the present invention. The control rack 1 70 can include a hood 173, Substrate insertion window 172, And an internal volume 174, The internal volume is organized to accommodate the plating calculator 100. a control system 1 7 1. A computer such as a computer can be used to control various components and processes of the plating calculator. A detachable chemical supply tank 1 75 can be installed next to and removed from the control frame 170. The electroplating calculator of this disclosure is completely innovative, In which the electroplating calculator utilizes a single chamber, To handle all metal deposition steps through the entire process and all pre-cleaning and intermediate cleaning. Today's electroplating tools use a series of separate slots. Used for the electroplating chemistry, Clean chemical composition, And flushing operation. Most of this cost is a robotic arm. It is capable of moving a very crisp wafer of up to 300 mm diameter between the grooves, -17-200923134 Not damaged. The advantage of single-slot plating is that the environment above the wafer can be controlled. To prevent oxygen from entering the plating bath and causing oxidation between the stepped portions of the metal. If the industry is moving to more complex multi-metal flip-chip bonding and wafer-scale package interconnects, This tool offers the main advantages of reduced processing. The number of faster platings that are used as the timing of the wafer motion around the tool is eliminated, And the chemical composition must be propelled by the trough a short distance to the plating bath. There is less risk of leakage from hazardous chemical components. An enlarged view of the multi-metal bump copper + nickel + lead tin and a copper bump array with a solder cap is shown in Figure 18. This new single-slot embodiment is referred to as a plating calculator. Because it enables the first complete electroplating process to be completed in a single chamber, At the same time, both the chemical composition of the motion and the subsequent rinse water pass through the wafer. Rather than moving the wafer to the chemical composition. This is due to the predictability of a new standard that confers reproducible parameters and repeatability. Based on the entire process sequence and chemical composition and electrical conditions, material, And continuous monitoring of the environment, The predictability is achieved by having better feedback, Forward feed, And the final predictive measurement given. Some advantages and preferred features selectively include: When the entire wafer plating and rinsing steps can be completed, Reduce wafer handling and damage, Once loaded, the tool does not move the wafer step by step; A more efficient single plating tank capacity gives a faster ROI and a much lower capital cost than a faster return period; Immediately arranging the parameters in the spreadsheet format and making changes to any process -18- 200923134 changes or sequence changes, And the ability to input to other machines with the same results - just like a spreadsheet or program on a computer. The difference between this tool and other multi-slot systems is: Generally, it provides a very precise control and immediate monitoring and control environment; Plug-and-play chemical composition or "inkjet plating device" mourning, The far smaller slots with a denser mixture of metal-ion chemical compositions are generally used, It can make the slots change, Without a long heating process and a much better tool available time, The smaller slots are designed for this shorter production run. However, it is still possible to handle longer runs by using the same chemical composition in most of the tanks. The system monitors the grooves for general degradation of metal-ion consumption and chemical composition, Until it signals that it is necessary to replace the slot; The external monitoring of the chemical composition and the plating bath with the in-slot sensor in the chamber has much more consistent and repeatable process control: Between metal deposition for the most active rinsing and cleaning of chambers and wafers, Or active tilting before and after flushing, This tilting is not done in today's tools, And represents a very cost-effective way, To clean a large plating bath area with a minimum amount of water; And filling and plating - the system is also designed to minimize chemical composition leakage, This chemical composition leakage is typically seen by the continuous circulation of the hot fluid through the long-term operation of the piping system. Used for this entire process time, This tool will be filled with the chemical composition and electroplated using the same chemical composition. Or will change the chemical composition periodically, And by moving so much fluid volume, Able to heat the chemical composition, _ take the chemical composition, And substantially increase the use of less power in these costs. Additional 'a single unit to complete most functions · pre-processing, Electricity -19- 200923134 plating, rinse, dry; Replace most coverage areas, Mechanical arm, Capital cost; The closed tank provides substantially inert gas, To prevent oxidation; An open tank like electroplating; Software program "Inteliplate"; The smart software receives feedback from the metrology sensor in the plating bath and in the slot. Adjusting the plating parameters in the rectifier for a constant plating ratio; And dual function conductivity sensor, Inform when the plating bath is full and the concentration is determined. The single unit is also provided for nanoparticle plating - the addition of metal particles to the chemicals, To promote and improve uniformity after reflow; Tissue layer (Strata) plating process, Here, a plurality of electroplated layers are formed in a predetermined sequence using different chemicals. Since a large amount of flushing and qualifications are eliminated before a different layer can be deposited, As traditional plating systems have, It dramatically accelerates the plating process. In general, Improved performance including uniformity of thickness, Chemical efficiency, Fast running ratio of manufacturing, And from the electroless electrolyte to the wafer surface, The quality of the deposited material, especially to the uniformity of the distribution. Existing methods utilize temperature and chemical control in electroless plating, To bring a uniform plating result. Temperature is a key parameter affecting the plating process. Once the mineral liquid contacts a suitable substrate, Electroless plating occurs over a wide range of temperatures. The temperature of a plating solution is a response time program. therefore, The temperature control for electroless plating is limited to a certain range. Electrical contact with a very low power circuit provides a stop/start of a fast switch for electroless plating, It expands the ability to accurately control the electroless process. Ultrasonic agitation for electroplating tantalum wafers and other electronic substrates produces electroplated deposits from traditional processes. The deposits vary in height from the deposition -20-200923134 across the surface of the wafer. This is due in part to the change in the concentration of metal ions in the boundary layer immediately above the growing metal deposit. agitation, Such as the boundary layer agitation, The composition can be provided by the use of an ultrasonic sensor. Existing methods utilize a single frequency generator and sensor to vibrate electrolytes, To cause fluid exchange on the surface of the wafer. however, The mass transfer and energy transfer in micro-dimension are the main contributors to the plating rate and power efficiency. To deposit a material onto a particular geometric component, a range of vibration frequencies, amplitude, And hardware fabrics optimize quality and energy transfer. a wider range of vibration frequency generators, sensor, And operating models (vibration models and fabric models) to optimize process parameters, Such as the frequency range, Power range, And the connection of a sensor to a substrate or substrate holder for a special process. By driving most of the sound frequency through the plating electrolyte and across the boundary layer interface, This agitation disintegrates the boundary layer stratification state, Causes micron-sized turbulent mixing. In addition, Here there are air molecules directly on the surface of the wafer, The air molecules are substantially displaced, To achieve a firm and uniform plating result. This disclosure substantially enhances the ability to break the surface tension on the wafer. In favor of And to promote the plating process. The acoustic energy can be directed upward through the bottom side of the wafer, Guide down on the surface of the wafer, Or traversing the surface of the wafer parallel to the plane of the boundary layer and the wafer. The sound energy is not only a pure function of a constant period, However, it may include a continuous periodic function and a combination of a continuous majority of overlapping frequencies across the audible range of sounds ('white noise') and the transonic range, Or one of a combination of a series of short duration-pulse acoustic energy packets in the audible sound and/or transonic frequency range. In this technology, Times -21 - 200923134 Speed of sound, Speed of sound, Ultrasonic, And millions of frequency ultrasonic waves can be introduced into a liquid system, Or systems to produce evenly distributed energy in the system or systems, quality, And momentum. Applications include to be used in semiconductors, MEMS, miniaturization, And the cleanliness of nanotechnology manufacturing, plating, Electroless plating, Mixed purpose. Various wave energy can be maintained in any direction, promote, And/or the active material is introduced into the system or systems. Various waves can be produced originally, amplification, guide, Pulse wave generation, With/without the same amplitude, Constantly and / or intermittently. Various waves can be piezoelectric, magnetic, Flared, single, most, And / or with or without a waveguide sensor. The method provides for introducing energy and/or momentum into the liquid system and near the surface of the solid, To generate energy on the scale of the scale of the system and the microscale of the nanometer level, Uniform distribution of momentum and mass. One or more sensors can be coupled to the back of a fixture, Wafer chuck, Substrate base, anode, electrode, Horn, Ring, gate, mat, frame, Or on the screen, The waveguides are introduced into the liquid system and near the surface of the solid and the solid-liquid interface. The sensors can include a piezoelectric magnetic material. The various waves generated may include a single frequency, Most frequencies, And/or a range of sweeping waves, It can be controlled individually or simultaneously. The electrolyte can include a solution, colloid, Most of the liquid, Or particulate suspension liquid, May include or without metal ions, Or metal particles, Organic additives, Or neutral, Acidic, Or alkaline water. The portion to be vibrated and/or the surface of the solid may comprise metal, plastic, Ceramic, Oh, And / or glass. The near solid surface can be grouped in the range of a few nanometers to tens of microns. The solid-liquid interface can be composed of -22-200923134 in the range of nanometers. The surface of the solid may comprise one or more materials, It may be flat or include a component size ranging from one nanometer to 100 micrometers. Microsolid agitation is preferred, Because it enhances the quality and energy transfer of plating materials, To ensure the quality of the plating materials. Parts designed in small or small sizes, A large amount of mechanical agitation cannot efficiently obtain this mass/energy transfer, Unexpected reactions result in lower deposition quality and power efficiency. on the other hand, Microsolid agitation can penetrate into the microcomponent and achieve optimal mass/energy delivery. The wider frequency range of the wave generator and the frequency and amplitude conditions that the sensor and power supply can use in the plating system are optimized. The plating system includes a deposition material, Chemicals, Plating cell structure' and substrate. Sensors coupled to the plated object and a large amount of agitated hardware provide more paths, To adjust the microsolids agitation efficiency. Eliminating the operational model of the standing wave node and the resulting non-uniform plating material distribution can be used. Microsolid agitation also opens the door member to optimize the relevant application, Such as physical and chemical cleaning, Degassing, etc. Finally, the micro-solid agitation enables the solid nano-plating. Stirring to improve the uniformity of thickness, Power efficiency, Fast running ratio of manufacturing, And the quality of the deposited material from the electrolyte to the surface of the wafer, particularly deep vias greater than 80 microns and surfaces having a high aspect ratio. In an exemplary embodiment, As shown in Figure 2-5, roughly two types of ultrasonic sensors are used. First, one or more (substantially two) horns are in the base of the plating bath. Further, a ring member may be formed in a plating chamber disposed between the cathode (wafer) and the anode. The ring or shrink strap -23- 200923134 is generally available in stainless steel and multiple grooves. Each sensor generally provides an optimum frequency. Some frequencies increase the adhesion between the wafer and the plated metal. Software control can be used, To change the frequencies, To optimize the process, for example, By sweeping the frequencies, To eliminate standing waves. The agitation also greatly increases the uniformity of the sediment, Quality transfer, Flushing efficiency, Degassing, etc. The ultrasonic sensors can also be selectively used for via activation and cleaning of the wafer and/or plating bath. In order to accommodate this shock, The wafer chuck can be selectively mounted on a support base using a crevice sheet. The crevices provide some "give" during the shock. The one or more electromechanical sensors are substantially controlled by an electronic waveform generator capable of producing both pure periodicity and arbitrary electrical waveforms. The sensors are connected to a vibrating surface by substantially one or more rigid members and/or circular rings. The ring surrounds the entire wafer to be processed, It is made of non-magnetic materials. The quality of the connecting rod members and the ring members is substantially sufficiently low, So as not to weaken the waveform to be shipped near the wafer. These rods and ring members are also substantially rigid and rigid. In order to accurately transport the intended waveform. The sensor and the connecting rod can be directly positioned below the wafer itself. Via the wafer holder, Wafer platen, Or the wafer chuck transports acoustic energy to the wafer. In this particular embodiment, The energy imparted to the wafer holder by the sensor and the rod moves upwardly through the wafer holder into the wafer itself, The wafer is caused to shift vertically in a manner synchronized with the motion of the sensor. The range of the shift distance (waveform amplitude) is approximately between 1 micrometer and 200 micrometers. The second mechanism for imparting vibration energy to the wafer couples the -24-200923134 connecting rod and sensor to the wafer holder in a manner The motion is made parallel to the wafer surface. Due to the fragile nature of these wafers, The force can be grouped and not directly coupled to the wafer holder. Coupled to the wafer platen or wafer chuck, It sequentially transports the shock to the wafer itself. This acoustic energy can be grouped and guided by the outer diameter of the wafer to the center. The medium used for the transfer of energy is directly to the surface of the wafer, And give the best for the best plating. In this case, The effect of the energy of the vibration is to rapidly shift the wafer back and forth in the direction of the wafer. It has an amplitude of approximately 1 200 microns. In the third institution that practices this disclosure, By the action of two separators, The energy of the shock is imparted to the wafer simultaneously or in various sequences specified by the process in the two axes. Sensically mounted below the wafer, And another sensor is mounted to the crystal. The precision of the optimum vibration frequency will vary with the size of the wafer and the size of the surface component to be plated. The frequency used is in the range of approximately 1 Hz and approximately 21 kHz. The pure period itself is not generally used in this disclosure. In order to avoid harmonic resonance and/or standing wave formation on the side of the plating chamber. Conversely, a mixture of heterogeneous overlapping frequencies ('white noise') can be employed in combination with a periodic function of the composition. The application of the vibration energy can be applied continuously during the cycle, Or can be periodically pulsed. The rigid wafer platen support structure substantially completes the second function of the wafer through the vacuum, Mechanical connection, Or the direct direction of the other method is the sensing but the energy is completely passed through the different agitating planes of the micrometer and the sensing is closed by the direct circular side of the wafer on the wafer. In each other, each plating machine: Favorable adhesion, -25- 200923134 and is a rigid and one structure, The energy of the shock is conducted in the same manner throughout the entire wafer (e.g., the deflection in the wafer platen and the wafer should be as small as possible). The connector rod or bracket is positioned between the wafer/wafer platen and the sensor. In this way, the vibration energy of the sensor is faithfully transported and transported to the wafer with a minimum amount of attenuation. The connector bars can be configured to be securely coupled to the wafer platen support. The connector member is desirably made of a non-magnetic mechanical rigid material having a low motion quality. But not limited to titanium. The material including the connection to the sensor and the connection hardware from the sensor is substantially mechanically rigid, And has a low inertia. The hardware should ideally also be non-magnetic and non-inductive, So as not to affect the quality of the plating deposit on the wafer or substrate. The sensor can be assembled to form a terminal that is securely coupled to the connector bar or bracket. In this way, almost all of the kinetic energy of the sensor is guided into the wafer platen fixture. The sensor can be configured to be firmly supported and fastened. One of the magnetostrictive or piezoelectric sensors can be used. Magnetostrictive sensors typically operate between approximately one volt and approximately one volt. Piezoelectric sensors typically operate between 〇-4 volts. When compared to a piezoelectric sensor, Due to the large reliability of the magnetostrictive sensor, The higher force constant of the magnetostrictive sensor, The lower operating voltage of the magnetostrictive sensor, And the smoother response of the magnetostrictive sensor to temperature changes, A magnetostrictive sensor is a preferred embodiment of the piezoelectric sensor. The sensor can be grouped and driven by a programmable arbitrary waveform generator. The generator can supply approximately 1 Hz and approximately 2 1 at -26-200923134 Both periodicity and arbitrary waveforms in the frequency range between 0 00 Hertz. The waveform generator can be directly programmed or controlled by software operation as a component of the plating apparatus control system. The sensor can be pulled a farther closer to the wafer platen, Or directly below the wafer platen, Or in a configuration that is integrated with the wafer platen. however, The electric field generated by the sensor device may be coupled to an electric field on the wafer in the wafer plating bath, It can affect the process consistency of the wafer plating process. The amplitude and density of the shock energy coupled to the wafer can be increased by adding or subtracting one or more auxiliary sensors to the primary sensor. The auxiliary sensors are directed to the same axis or along one of the axes of the primary sensor at a right angle. This disclosure can also be applied to electroless (autocatalytic) metal plating. To increase the plating ratio, Removing the bubbles formed by the surface to be plated, And establish a more homogeneous plating deposit thickness distribution. When the electroplating reactor unit is infused with electromineralization, And the anode current is turned on (in the case of electrolyte plating), Or the reactor unit is at the optimum process temperature (in the case of electroless or autocatalytic plating) The sensors are operated substantially during the wafer plating process. The use of ultrasonic sensors provides an aspect of solid state energy for a variety of electroplating and unit operation kinematics. The advantages of this technique achieve a key difference for this disclosure. Because they give a wide range of functions that just outweigh the typical focus of plating. for example, Providing room design for directing energy to a suitable surface is provided by the present disclosure, And knowing what energy is applied to the process and how to respond to the desired result, Feedforward, And pre- -27- 200923134 The process control controls the process expertise appropriately controlled. In addition, the software, measuring, And know how to use the D S P electronics to manage complex sensor outputs while ensuring the desired waveform and energy control expertise, And the instant mode control software is facilitated by the specific embodiment of the disclosure. Again, The leading edge of the only solid-state directional energy plating (DEP) is controlled by multiple frequencies, This implementation of the multi-mode system, Provides immediate feedback and feed-forward capabilities. Predictive process monitoring and the use of such sound waves as a “snake” is a step to detect chemical composition densities and conditions and metal thickness levels. The main process kinematics that are expected to use this energy by this disclosure are effective, Because they give a lower cost plating bath with less chemical composition flow and use, And improved plating ratio and product quality. The frequency of the second broad range is of interest, Although other frequency ranges can be used. for example, A frequency of about 20 to about 20 kilohertz can be used for general electric shovel, Soft metal, And stirring, Here, the frequency of about 500 kHz to about 2 megahertz can be used for fine parts, Fine spacing, And wafer cleaning, It is very likely that the through hole is plated. for example, The latter frequency range can be used for boundary layer agitation and via activation at the wafer level, Through hole cleaning and startup, Electroplating tank wall and chamber cleaning, Chemical composition agitation and diffusion of particles throughout the plating bath, Cavitation in the metal layer to begin the next plating, Mix layered metal layers using our layered plating process, Use the sonar measurement method to measure the bump height or film thickness, Adhesion promotion, Electroplating ratio is accelerated, And/or diffusion and agitation of the via holes in the via holes and the inner side of the wafer boundary layer. The following summary details the use of electroplating, sensor, And the research and experimentation of the university group -28- 200923134, The university group uses high-frequency energy waves to seek improved plating. These results most typically involve small areas and small samples. This disclosure can be used to augment these results over a larger 200 mm or 300 mm wafer surface. And use different frequency controls. The method includes a uniform and controllable waveform energy application - the back side of the wafer, positive, And laterally across the wafer surface and selectively providing feedback based on different wafer metal conductors and surfaces. The method can also include measuring the waveform and energy of the result. To ensure that they are repeatable and measurable. The method may additionally include self-testing of systems with virtual or no load, To ensure proper operation. Key process kinematics wafer boundary layer agitation and through-hole filling, The surface of the electric tank chamber is clean, And the particles in the solution are mixed and suspended. Similar to pulse plating used in rectifier control, A preferred method for general ultrasonic waveform and frequency control is to use pulse-shaped reaction optimization. And use DSP controllers and software as well as feedback technology. Novel DSP sound technologies can include: Instant continuous ultrasonic monitoring; Simplified mechanical coupling between the sensor and the chamber; High performance that can be achieved with low cost sensors; Far larger than the same width; No need for laborious damping, To shorten the system impulse response; New DSP technology and debug contact ring technology for ultrasonic measurement. Figure 4 illustrates a perspective view of a side ring member 400 for use in an exemplary plating calculator of the present invention. The side ring member 400 is positioned in the process volume 2 substantially at a position immediately adjacent to the periphery of the substrate to be plated. The side ring member 4 can be attached to an inner surface of the plating bath 1 at a first point 401 and to a sensor at a second point 402. A plurality of apertures 403 can be formed into the side ring member 400, The symmetry vibration is also prevented from occurring in the side ring member 400 by allowing the plating solution to flow through the holes -29-200923134. Figure 5 illustrates the positioning of the sensor 1 〇 8 and the side ring member 400. The mechanism that causes electrical contact to the seed layer of the semiconductor wafer is typically known as a contact ring. The wafer is processed in a plating reactor. The result of depositing metal onto the working surface of the wafer devices. Wafers typically are prepared for electrodeposition of metals by first applying a seed layer to the surface of the wafer by other means. This surface receives subsequent electrodeposition of the metal. Above the active area of the wafer, The seed layer can be patterned by a lithography method. A pattern of a seed layer is exposed to the electrolyte. The photo-induced uranium is removed from the outer edge of the wafer. To provide an area for causing the electrical contact. The area at the outer edge of the wafer is referred to as the mutually exclusive area. And the edge of the wafer is limited to about 1 toward the center. 5 mm annular width. The mutually exclusive zone is the area in which electrical contact is made. The mutually exclusive region can be sealed from exposure to the electrolyte to protect the contact/seed layer interface. The current density at the contact/seed layer interface is relatively high compared to the rest of the wafer. If an electrolyte is present in the interface, the seed layer can be eroded, creating an island region of seed around the contact and thereby interrupting conduction through the seed layer to the remainder of the wafer. The wafer contact ring of the present disclosure generally provides one or more exemplary embodiments as described below. These techniques provide a preferred mutual exclusion zone seal and a stronger electrical contact, but the wafer itself has fewer masks (i.e., the area of the mutually exclusive area is minimized). The single unit contact ring is sealed to the electrical contacts that house the wafer' while separating and protecting the electrical contacts in the same portion. -30- 200923134 Figure 6 shows a cross-sectional view of a reactor cut through its center on an upright plane. The fluid body of the electrolyte is received between the wafer and the protruding anode. A voltage or current potential is applied to the anode' and the contacts at the wafer are grounded. The substrate 600 is in communication with the contact ring 114. The contact ring 141 includes an annular seal 601 that is radially oriented toward the interior of the plurality of electrical contacts 602. Each of the electrical contacts 602 is positioned to electrically contact an outer peripheral portion of the substrate 60 to apply a plating bias thereto to support the electrochemical deposition process. Figure 7 is a detailed cross-sectional view taken from the first and second sub-assemblies of the contact ring packaged as shown in Figure 6. Figure 8 is a detailed cross-sectional view of the contact/seal/wafer interface of Figure 7. Figure 9 is an isometric view of an exemplary information transfer bus (bus) ring 900 that delivers current to each of the contacts of the contact ring 114, the contacts and the wafer in the mutually exclusive region The seed layer is bitten. In operation, the wafer can be configured to be forcibly engaged with a loop that is received in a cassette just inside the contacts. The 0-ring causes a seal on the wafer surface inside the exposed seed layer to prevent electrolyte exposure to the contact/seed layer interface. The contacts generally comprise spring loaded pogo pins, and in this embodiment, the spring pins are commercially available test probes. Top Compression A force of a spring housed within each pogo pin that generally accommodates an axial stroke of 1 mm. The compliance of the axial stroke in the pogo pin allows the wafer to seek a sealing position against the 〇-shaped ring while still causing contact with the conductive portion of the pogo pin/seed interface. The ring contact subassembly large -31 - 200923134 has four information transfer path ring members 90' as shown in Fig. 9 and the ring members are substantially radially encapsulated in four individual 90 degree images. Each of the information transfer paths 900 is provided with nine spring pins. A total of 36 spring pins are spaced apart from the wafer seed layer and equidistantly spaced about their 360 degree circumference. The plurality of spring pins are evenly distributed to the seed layer' and improve the metal deposition properties. The individual information transfer paths 900 are generally associated with each other thereby providing a mechanism to measure the variability between each of the four quadrants. However, a complex information transfer path 900 can be provided, the resolution of the measurement. Previous deflection designs have made the connection of this discrete high voltage line to the busbars unrealistic by methods such as methods. The relatively large stroke of the pogo pins strikes the interface of the wafer, causing the design to tolerate variable wafer thickness, the wafer sealing against the indeterminate position of the crucible ring, and in use. Repeated use of proven test probe technology. The ring contact design is intended to have continuous contacts that are hard, uninterrupted contacts/seed interfaces. These designs lack this face and the interface tolerates the above geometric variations. Previous toroidal contact designs have also utilized metal flexures that behave like small cantilevered beams and columns, and when forced to small seals, limit their axial compliance to at least 1 mm. Assembly method or expensive manufacturing method to form and cut the curved portion. The ring member utilizing the metal flexure portion has a higher height: the figure shows a circle cut through the center in an upright plane, the limit Each direction is arranged in contact to achieve a more uniform thickness and uniform electrical insulation, and the increase in impedance is made, the measurement becomes a compliance tolerance, and a novel should be a prior obedience to create a firm interface. The size of the package is due to the complexity of the individual cross-section of the ring contact -32- 200923134. Figure 11 is a detailed cross-sectional view taken through the ring contact subassembly showing the wafer in contact with an electrically conductive elastomer. The elastomer is compressed between the crystal and a slip ring 900. The information transfer path loops conduct current to each of the conductive elements in the elastomer. The wafer mutually exclusive region and the conductive element are sealed to isolate the electrolyte by the non-conductive portion of the elastomer. Figure 1 is a detailed cross-sectional view of the wafer with the wafer removed. Figure 1 is an isometric view of a section of the conductive elastomer 1 2 〇 。. The conductive elements are simultaneously molded inside the non-conductive elastomer in a radial pattern that matches the radius of the wafer. In operation, the wafer is substantially forcibly engaged with the conductive elastomer 1 200. The non-conductive portion causes a seal on the surface of the wafer inside the exposed seed layer to prevent electrolyte from being exposed to the conductive element/seed layer interface. The combination of the conductive and non-conductive elastomers permits axial compliance when squeezed between the crystal and the information transfer passage ring member 90. The compliance of the axial stroke in the elastomer allows the wafer to seek a sealing position against the non-conductive portion while still causing contact with the conductive portion of the elastomeric interface. The ring contact subassembly generally comprises a plurality of segmented electrically conductive elastomers 1 200. Each segment can be assembled to surround the circumference of the wafer to provide a 360 degree sealing contact. The plurality of conductive elements achieve a more uniform current distribution to the seed layer and improve the thickness uniformity of the metal deposition. The integration of the sealing element with the conductive element of the elastomer eliminates the axial dimension stacking of the contact plus the seal, thereby reducing the axial height of the ring contact from 3 mm to 2 mm, which allows the fluid agitation element to be Placed at -33-200923134 close to the wafer surface without rubbing on top of the information transfer path ring member 900. It also eliminates the radial dimension stacking of the contacts plus the seals, thereby reducing the radial annular dimensions required to cause the seal and contact with the seed layer within the boundaries of a narrow mutually exclusive zone. The integrated seal/conductive elastomer provides substantially an industrially usable component and has proven reliability for electrical contact applications in flat panel display technology. Thus, a metal fiber, sharp or blunt metal tip (generally formed by drawing, molding, etching, or machining) can be assembled into the elastomer to form a contact with the metal tips. / sealing assembly and surface, the metal tips are slightly extended, or sunk, or at the same surface level of the elastomer to obtain a liquid-tight seal and isolation between the elastomer and the wafer surface And obtaining a good electrical contact between the metal tip and the seed crystal of the wafer. The tip selectively provides copper, copper beryllium alloy, titanium, or steel, and may optionally be coated with gold, platinum, or palladium. The elastomer selectively provides polyfluorene oxide, fluorinated rubber, polystyrene, or polypropylene. The in-line contact/seal assembly can be constructed by molding, injection, extrusion, or machining. The electrical contact width from the edge of the wafer toward the center of the wafer can be grouped to be approximately zero. 5, 1, 1.5, 2 or 2. 5 mm, or about any width in this range. The width of the seal from the edge of the wafer toward the center of the wafer can be grouped to be approximately 1, 1. 5, 2, 2_5, 3, 3. 5, 4, 4. 5 or 5 mm, or about any width in the range. The tip of the elastomer surface that protrudes or sinks into the surface of the elastomer is approximately 0, 0. 1, 0. 2, 0. 3, 0. 4, 0. 5 or 0_6 mm, or about any length in the range. The tips are generally uniform & have a variation of less than about -34 - 200923134 0 · 2 mm. The surface relief of the elastomer may be grouped to be uniform and less than about 〇. 2 mm change. The total thickness of the tips, elastomers and metals can be grouped in the range of about 2 to 8 mm. The considerable axial compliance of the elastomer results in a compliant electrical interface to the wafer, resulting in a design that tolerates variable wafer thickness, machining tolerances, and uncertainty of the wafer seal against the elastomer. position. Previous ring contact designs have been attempted to have continuous contacts that create a rigid, uninterrupted contact/seed interface. These designs lack this compliant interface that tolerates the aforementioned geometric variations. Previous ring contact designs also utilized metal flexures that behave like small cantilever beams and columns, and when forced into small-sized envelopes, limit their axial compliance to at least 1. Between millimeters. Rings utilizing metal flexures are costly due to complex assembly methods or expensive manufacturing methods to form and cut the individual flex portions. In another embodiment of the disclosure, an EDM contact and a seal ring are provided that are half etched or wire cut. This embodiment is a fabrication of semi-micro etched or wire cut EDM microetched metal contacts and seal rings to optimize plated contacts and seals for semiconductor and microelectronics. Improved performance includes optimized contact for uniform distribution of current on the plated substrate and low electrical resistance; complete sealing without chemical and electrical leakage, high pressure tolerance and photoresist and sealing Low allowable deformation of the material; minimizing the effects of fluid dynamics by seal geometry; and high performance fluid dynamics and electrokinetic reaction kinematics. Existing methods utilize the traditional techniques of mechanical and molding processes to make contact parts and seals -35- 200923134 parts. The semiconductor and microelectronics industry has advanced to the early stages of the nanotechnology era. The size of the devices and the size of the parts to be processed are continuing to shrink, making contact and sealing increasingly difficult. In the manufacture of small contacts and seals for electroplated parts, semi-micro uranium engraving or wire-cutting ED Μ microfabrication generally utilizes the MEM S technology, which enables the rapid manufacture of contacts, seals, and combinations in a standardized manner. Establish precise dimensions and low tolerances of the part, high electrical conductivity of the contacts, uniform distribution of current, less sealing area, low profile of the seal, and high turbulence of the fluid. Figure 14 shows a schematic cross-sectional view of the tip prior to etching. Figure i5 shows a schematic cross-sectional view of the etched microcontact at the contact tip, which is substantially fabricated using MEMS technology by a metal or alloy with or without another metal or alloy. to make. Figure 16 shows a schematic cross-sectional view of an etched microcontact having a cladding or laminate of isolation seals. Geometry and size may vary. Figure 17 illustrates a perspective view of an exemplary contact ring 114 having a plurality of electrical contact fingers 17 that extend radially inward therefrom. The contact fingers 1 700 are generally configured to electrically contact a perimeter or edge portion of a substrate to be plated. Figure 17 also illustrates the slip ring 900, which is configured to be powered by the electrical component to the contact ring 114. The cladding material for the contact ring 14 or the collector ring 900 can optionally include PVDF (polydifluoroethylene). Ethylene), polyvinyl chloride (polyethylene), or materials such as fluorinated rubber. The contacts of this embodiment provide continuity of contact to ensure a uniform current distribution. A small or sharply -36- 200923134 design of the plated contact tip can penetrate the surface of the conductive metal or alloy oxygen or another insulating layer to cause low contact resistance. The contacts can be fabricated using MEMS technology to etch micro-components; or wire-cut EDM technology to machine micro-components; and coating/stacking techniques for accurate, accurate, and cost-effective contact and seals The low profile of the seal generally allows for uniform flow over the surface of the substrate and adjustment of the thickness distribution of the diffusion layer. This precision seal generally allows for higher tolerances and improved sealing and leakage prevention. The more rigid material causes the contact and seal to be more difficult to deform, while still allowing deflection as shown in Figure 16. Prior to operation, the contact ring can be grouped into a flexible comb with a reduced circular configuration. Refers to the touch with the power source. These fingers are only slightly curved. When the contact is made, the tip substantially rubs each of the fingers, thereby removing anything on the surface and providing an improved electrical contact. The system is thus self-cleaning. Figure 19 illustrates a diagram of an exemplary multimetal plating process of the present invention. The method begins at step 1900 and continues to step 1 920 where the substrate is positioned in the processing volume of the plating bath. In step 1 902, the substrate support member is positioned substantially on a cathode, and the substrate support also provides rotation of the substrate in the processing volume. Once the substrate is positioned on the substrate support member, the plating bath can be closed or sealed ready to be filled with the electrolyte solution. At step 1904, the process is configured to group the first metal layer to the first plating charge on the substrate. For example, the first plating solution may be a solution that is configured to support copper. At step 1 906, an electrical bias can be applied to the cathode for processing. Body flow pressure selection. If the substrate is low to electrical contact with the ruthenium oxide process, and between the base-37-200923134 plate support member and an anode assembly position of the energy storage solution, the anode assembly is positioned and supported on the substrate. The substrates on the support members are in a parallel orientation. The electrical bias is advantageous for the electrodeposition process and can include forward and reverse biases, pulses, and other waveforms as is conventional in the art of electrodeposition. In general, both the anode assembly and the substrate support member are housed within the processing volume of the plating bath and immersed in the plating solution contained therein. Once the electrical bias has been applied for a specified period of time, the plating process for the first metal is substantially complete. The method then continues to step 1908 where the first plating solution can be discharged from the processing volume. Once the plating solution is discharged, the processing volume (and the substrate held in the processing volume) can be rinsed or cleaned by introducing a cleaning solution at step 1910. In an exemplary embodiment of the invention, the cleaning solution introduced in step 119 may be deionized water. Once the cleaning step is completed, the cleaning solution can also be discharged from the processing volume. The exemplary method may additionally include introduction of an inert gas such as nitrogen or argon into the processing volume to prevent oxidation of the substrate or metal layer deposited thereon, as noted in step 192. The inventors have noted that it would be beneficial to introduce the inert gas throughout the entire plating process, which would be particularly important during the process of discharging, rinsing, and refilling the processing volume with a plating solution, The substrate was not immersed in a plating solution during these processes. At step 1914, a second plating solution can be introduced into the processing volume. The second plating solution can be grouped to support electro-deposition of a second metal such as nickel. A second electrical bias can be applied between the anode assembly and the substrate at step 1 1 1 6 ' to facilitate electroplating the second metal onto the substrate. Once -38-200923134 the deposition of the second metal has been completed 'the processing volume can be discharged again the rinsed plating solution' and the substrate is still positioned in the processing volume, as noted by step 1 9 18 . Furthermore, if desired, the processing volume can also be filled with an inert gas, as in step 119. If the third metal layer is to be deposited, the aforementioned process can be repeated. However, if the electroplating process ends after the second metal layer, the substrate can also be removed from the processing volume in step 1918, and the exemplary method is completed in step 1920. The foregoing examples can be similarly smoothly repeated by replacing the users of the foregoing examples with the general or specifically recited reactants and/or operating conditions of the disclosure. Although the disclosure has been described in detail with particular reference to these preferred embodiments, other embodiments can achieve the same results. Variations and modifications of the present disclosure will be apparent to those skilled in the art, and are intended to cover all such modifications and equivalents. The entire disclosures of all references, applications, patents, and publications, which are incorporated herein by reference in its entirety in the entireties in Additionally, the foregoing is a brief description of the various features of the exemplary embodiments of the present invention, such that those skilled in the art can readily appreciate the various aspects of the present disclosure. Those skilled in the art will appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for performing the same purpose and/or achieving the specific embodiments described therein. The same advantages. Those skilled in the art will appreciate that such equivalents are not to be <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 200923134 is separated from the spirit and scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS [0009] The accompanying drawings, which are incorporated in and constitute a The drawings are only for the purpose of illustrating a preferred embodiment of the disclosure and are not to be construed as limiting. Figure 1A illustrates a top perspective view of an exemplary plating calculator of the present invention; Figure 1B illustrates a side cross-sectional view of an exemplary plating calculator of the present invention; Figure 1C illustrates a side cross-sectional view of an exemplary plating calculator of the present invention; A bottom perspective view illustrating a side cross-sectional view of an exemplary plating calculator of the present invention; FIG. 1E illustrates a side view of an exemplary chemical supply module of the present invention; FIG. 1G illustrates a side and perspective view of an exemplary plating calculator of the present invention Figure 1L illustrates a side cross-sectional view of an exemplary electroplating calculator of the present invention; Figure 1 is a partially exploded perspective view of an exemplary control rack system for a plating calculator of the present invention; Figure 2 illustrates an exemplary plating calculator of the present invention BRIEF DESCRIPTION OF THE DRAWINGS Figure 3 illustrates a bottom perspective view of an exemplary sensor of an exemplary plating calculator of the present invention; Figure 4 illustrates a perspective view of a side ring for an exemplary plating calculator of the present invention - Figure 4 illustrates A perspective view of a mounting plate, a sensor, and a side ring for use in the present invention; FIG. 6 illustrates an exemplary plating calculator of the present invention. Figure 7 illustrates a top perspective view of an exemplary contact ring of an exemplary plating calculator of the present invention; Figure 8 illustrates a partial cross-sectional view of an exemplary contact ring of an exemplary plating calculator of the present invention; Figure 9 illustrates an exemplary plating of the present invention A perspective view of a portion of the contact ring of the calculator; FIG. 1 is a side cross-sectional view showing the contact ring assembly and the plating bath of the exemplary plating calculator of the present invention; FIG. 1 1 illustrates an exemplary contact of the non-standard plating calculator of the present invention. Figure 1 2 illustrates a bottom perspective and partial cross-sectional view of an exemplary contact ring of the present invention; Figure 13 illustrates a bottom perspective view of an exemplary contact ring of the present invention; Figure 14 illustrates a non-use of the present invention. Exemplary Contact Member of Contact Ring of a Fan Plating Calculator; FIG. 1 illustrates an exemplary contact member for a contact ring of the non-standard plating calculator of the present invention; FIG. 16 illustrates an exemplary plating calculator for use in the present invention. Exemplary contact member assembly; -41 - 200923134 Figure 1 7 illustrates a perspective view of an exemplary contact ring assembly of the present invention; Figure 18 illustrates a plating meter by the present invention Two bumps exemplary embodiment of the test device produced; and FIG. 19 is a flowchart of an exemplary method of the present invention will be described. [Main component symbol description] 1〇〇: plating calculator 102: processing volume 104: substrate supporting member 1 〇6: manifold 1 〇 8: sensor 1 1 0 : anode 1 1 0 a : anode segment 1 10b: anode segment 1 10C : Anode segment 1 1 0 d : Power terminal I Π : Sensor II 2 : Drive unit 1 1 4 : Contact ring 129 : Chemical supply module 1 3 0 : Storage tank 1 3 2 : Loading tank 1 3 4 : Filter 1 3 6 : Heater-42 - 200923134 138 : 140 ·_ 142 : 15 0: 15 1: 152: 15 3: 154: 170: 17 1: 172 : 173: 174 : 175: 400 : 401 : 402 : 403 : 600 : 60 1: 602 : 900 : 1200 1700 Manifold fluid valve fluid pump actuator upright axis arrow platform hard component control frame control system substrate insertion window hood internal volume chemical supply slot Side ring first point second point orifice substrate annular seal contact information transfer path ring: elastomer: contact finger -43