TW200845046A - Electron beam irradiation system - Google Patents

Electron beam irradiation system Download PDF

Info

Publication number
TW200845046A
TW200845046A TW96142859A TW96142859A TW200845046A TW 200845046 A TW200845046 A TW 200845046A TW 96142859 A TW96142859 A TW 96142859A TW 96142859 A TW96142859 A TW 96142859A TW 200845046 A TW200845046 A TW 200845046A
Authority
TW
Taiwan
Prior art keywords
electron beam
vacuum chamber
flow path
beam irradiation
electron
Prior art date
Application number
TW96142859A
Other languages
Chinese (zh)
Inventor
Masayoshi Ishikawa
Keigo Uchiyama
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of TW200845046A publication Critical patent/TW200845046A/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41FPRINTING MACHINES OR PRESSES
    • B41F23/00Devices for treating the surfaces of sheets, webs, or other articles in connection with printing
    • B41F23/04Devices for treating the surfaces of sheets, webs, or other articles in connection with printing by heat drying, by cooling, by applying powders
    • B41F23/0403Drying webs
    • B41F23/0406Drying webs by radiation
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • G21K5/04Irradiation devices with beam-forming means
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • G21K5/10Irradiation devices with provision for relative movement of beam source and object to be irradiated

Abstract

In an electron beam irradiation system (100), the chassis (20) of an electron beam irradiation apparatus (1) is disposed within a chamber (30) into which a printed material (P) is transferred. Within the chamber (30), first and second flow paths (37,38) are provided. The first flow path allows a nitrogen gas to flow along an outer wall (20b) of the chassis (20) on the side of the carry-in entrance (31) toward an irradiation position (Q). The second flow path allows a nitrogen gas to flow along an outer wall (20c) of the chassis (20) on the side of the carry-out entrance (32) toward the irradiation position (Q). In the first and second flow paths (37,38), the flow of the nitrogen gas flowing toward the irradiation position (Q) is aligned due to the Coanda effect. Accordingly, the electron beam irradiation system (100) can supply the nitrogen gas having a small degree of flow irregularity to the irradiation position (Q), so that the concentration of oxygen in the ambient gas at the irradiation position (Q) can be sufficiently reduced.

Description

200845046 九、發明說明 【發明所屬之技術領域】 本發明關於電子射線照射系統。 【先前技術】 電子射線照射裝置爲將釋出電子射線的電子槍收容於 容器,通過以薄膜所形成的射出窗,將電子射線射出至大 氣中之裝置。這種的電子射線照射裝置具有,例如使塗佈 於印刷物等的照射對象物之墨水硬化之用途。在將電子射 線照射裝置使用於該用途之情況,爲了不會阻礙因電子射 線的照射所產生之墨水的聚合反應,需要將電子射線的照 射位置之環境氣體中的氧濃度抑制於數百ppm以下左 右。 如此,作爲抑制電子射線的照射位置之環境氣體中的 氧濃度之技術,具有例如專利文獻1所記載的電子射線照 射裝置。在此以往的電子射線照射裝置,在導入有氮氣等 的鈍氣之真空室內,配置電子射線照射裝置之電子射線的 射出部,對在此真空室內被搬送之照射對象物,照射電子 射線。 [專利文獻1]日本實公平6-2160號公報 【發明內容】 [發明所欲解決之課題] 在上述的以往的電子射線照射裝置,在真空室內之電 -4- 200845046 子射線的照射位置,配置有鈍氣的導入噴嘴。但,在這種 的以往的結構,並未針對真空室內之鈍氣的流路進行充分 的考量,在朝照射對象物之鈍氣的流量,容易產生不均。 因此’不易充分地降低電子射線的照射位置之環境氣體中 的氧濃度。 本發明是爲了解決上述課題而開發完成之發明,其目 的在於提供’可充分地降低電子射線的照射位置之環境氣 體中的氧濃度之電子射線照射系統。 [用以解決課題之手段] 爲了解決上述課題,本發明之電子射線照射系統,其 特徵爲:具備:具有放出電子射線的電子放出構件之電子 射線照射裝置;具有成爲電子射線的照射對象之照射對象 物的搬入口及搬出口之真空室;及將照射對象物由搬入口 側朝搬出口側予以搬送之搬送手段,電子射線照射裝置具 有:配置於真空室內,將由電子放出構件所放出的電子射 線朝真空室內的預定照射位置射出之射出部,真空室是具 有第1流路,該流路以沿著射出部之搬入口側的壁部的方 式,朝照射位置使鈍氣流通。 在此電子射線照射系統,在搬送照射對象物之真空室 內,配置有電子射線照射裝置的射出部,在真空室內,設 有第1流路,該流路以沿著朝搬入口側的射出部之壁部的 方式,朝照射位置使鈍氣流通。在第1流路,藉由氣體沿 著壁部流動之效果(康達效應),可調整朝向照射位置之鈍 -5- 200845046 氣的流動。因此,在此電子射線照射系統,可將流動不均 小的鈍氣供給至照射位置,藉由將該氮氣與環境氣體中的 外氣成分置換,可使照射位置之環境氣體中的氧濃度充分 地降低。 又,真空室進一步具有第2流路,該流路以沿著射出 部之搬出口側的壁部的方式,朝照射位置使鈍氣流通爲 佳。在此情況,因在照射位置的兩側,可對照射對象物, 充分地供給流動不均小的鈍氣,所以,可更確實地降低電 子射線的照射位置之環境氣體中的氧濃度。 又,流通於第1流路之鈍氣的流量是較流通於第2流 路之純氣的流量大爲佳。由於弟1流路較第2流路位於更 靠近搬入口側,故,流通於第1流路之鈍氣,比起流通於 第2流路之鈍氣,對電子射線的照射位置之環境氣體中的 氧濃度之影響大。因此,藉由將流通於第1流路之鈍氣的 流量做成較流通於第2流路之鈍氣的流量大,能夠抑制流 通於第1流路之鈍氣干涉於流通於第2流路之鈍氣,可更 進一步且確實地使照射位置之環境氣體中的氧濃度降低。 又,更進一步具備氣體吹出手段,該吹出手段是以遮 蔽搬入口的方式,朝照射對象物的搬送方向的上游側,吹 出鈍氣爲佳。在此情況,藉由從氣體吹出手段所吹出之鈍 氣,抑制外氣由搬入口流入至真空室內。又,藉由朝照射 對象物的搬送方向的上游側吹出鈍氣,在照射對象物通過 真空室的搬入口之時間點,可將照射對象物的周圍之大氣 朝與搬入口相反方向吹散。 -6 - 200845046 [發明效果] 在本發明之電子射線照射系統,可使可使電子射線的 照射位置之環境氣體中的氧濃度充分地降低。 【實施方式】 以下’參照圖面,詳細說明關於本發明之電子射線照 射系統的理想實施形態。 圖1是顯不本發明的一實施形態之電子射線照射系統 的結構之斜視圖。又,圖2是圖1之II-II線斷面圖。如 圖1及圖2所示,電子射線照射系統1 〇〇之結構爲具備 有:成爲電子射線EB的產生源之電子射線照射裝置1; 塡充有氮等的鈍氣之真空室30;及用來將成爲電子射線 EB的照射對象之印刷物(照射對象物)p搬送至真空室30 內之一對搬送滾子(搬送手段)40。在到達電子射線照射系 統1 〇〇之前階段,在印刷物P的表面,例如藉由電子射線 EB的照射加以硬化之EB硬化墨水在未乾燥的狀態被塗 佈。電子射線照射系統1 00是藉由對印刷物P的表面,照 射電子射線EB,進行塗佈於印刷物P之EB硬化墨水的 硬化處理之系統。 首先,說明關於電子射線照射裝置1的結構。電子射 線照射裝置1是如圖3及圖4所示,具備有電子槍2、容 器3、及窗單元(射出部)4。此電子射線照射裝置1爲藉由 使由電子槍2所放出的電子射線EB朝預定方向以高速偏 200845046 向,來由窗單元4,呈線狀射出電子射線EB之裝置。 電子槍2具有:長方體狀之外殼6;藉由具有電氣絕 緣性的材料所形成之絕緣塊7 ;高耐壓型的連接器8 ;及 放出電子射線E B之細絲9。外殼6是例如藉由金屬所形 成,固定於容器3的基端側。在外殼6之容器3側的壁, 設有用來使外殻6的內部與容器3內的收容空間連通之開 口部6a。又,在外殼6的側壁,設有用來安裝連接器8 之開口部6b。 絕緣塊7是藉由例如環氧樹脂等的電氣絕緣性材料所 形成’由外部將從連接器8朝細絲9之電力供給路徑予以 絕緣。絕緣塊7具有:被收容於外殼6內之基部7 a ;及 由基部7 a ’通過開口部6 a朝容器3內的收容空間側突出 之切頭圓錐狀的突出部7b。基部7a佔有外殻6的內部之 大部分,接觸於外殼6之開口部6a側及開口部6b側的內 壁。又,在基部7a,未與外殼6的內壁接觸之部分,黏 貼有具導電性之薄膜1 〇。藉由此薄膜丨〇與作爲接地電位 之外殻6電性連接,能夠將面向外殼6的內面之絕緣塊7 的表面電位做成接地電位,可謀求進行動作時的穩定性提 昇。 連接器8爲用來從電子射線照射裝置1的外部,對細 絲9供給電源電壓之連接器。連接器8被插入至外殻6的 側面的開口部6b,在前端部分位於絕緣塊7的中心附近 之狀態,埋入絕緣塊7中並固定。在連接器8的基端,設 有用來保持由未圖示的電源裝置延伸之外部配線的前端之 -8— 200845046 電源用插頭的插入口 8a。又,在連接器8的前端,連接 有一對內部配線1 1,1 1。內部配線1 1,1 1是由連接器8 的前端,通過絕緣塊7的基部7a的中心及突出部7b的中 心,延伸至突出部7b的前端。 細絲9爲用來放出成爲電子射線EB之電子的構件。 細絲9安裝於絕緣塊7的突出部7b的前端部分,連接於 內部配線1 1,1 1。在細絲9的周圍,設有柵極部12。柵 極部1 2是與內部配線1 1,1 1的其中任一方電性連接,在 對細絲9施加高電壓之情況,亦對柵極部12施加高電 壓,藉由形成用來由細絲9引出電子之電場。由細絲9所 引出之電子是由形成於柵極部1 2的中心之孔,作爲電子 射線EB射出。再者,在欲更精密地控制來自於細絲9之 電子的放出的情況,例如與內部配線1 1,1 1同樣地,追 加設置另外的柵極部12用之配線,與細絲9的電位獨 立,控制柵極部1 2的電位爲佳。 容器3是形成沿著由細絲9所射出之電子射線EB的 射出軸延伸的圓筒狀,氣密地固定於電子槍2的外殼6。 在容器3的基端側的內部,形成有用來收容電子槍2的細 絲9、柵極部12、及絕緣塊7的突出部7b之圓筒狀的收 容部1 3。收容部1 3的徑是形成較外殼6的開口部6a更 大徑,由容器3的基端延伸至中央附近。又,在容器3的 前端側的內部,形成有與收容部1 3連通之電子射線通過 孔1 4。電子射線通過孔1 4呈較收容部1 3更小徑之圓筒 狀,沿著電子射線EB的射出軸,由容器3的中央附近延 -9- 200845046 伸至容器3的前端。 在電子射線通過孔1 4的周圍,沿著電子射線EB的 射出軸配置有電磁線圈1 5及電磁線圈1 6。電磁線圈1 5 及電磁線圈1 6的配置中心是與電子射線通過孔1 4的中心 ‘ 軸一致。藉由這些的電磁線圈1 5及電磁線圈1 6的相互作 ' 用,通過電子射線通過孔14之電子射線EB會朝後述的 電子射線射出窗23集束。 φ 更具體而言,電磁線圈15,是用來補正因電子槍2 或構成電子射線EB的通過路徑之各構件的機械性中心的 偏移、或各構成構件的殘留磁性及設置場所周邊的磁場等 的影響所產生之電子射線EB對期望的通過路徑(電子通過 孔14的中心軸)之偏移的調正(alignment)線圈。在本實施 形態,以相對向的2個電磁線圈1 5成對來發揮功能的方 式,4個電磁線圈1 5夾持電子射線通過孔1 4,以90度的 位相角加以配置,並因應需要予以使用。另外,電磁線圈 φ 1 6爲用來將由電子槍2所射出的電子射線EB聚集於電子 射線射出窗2 3之集束線圈,利用以漆包線等所形成的圓 筒狀的線圈部及軟鐵等所形成的磁性電路來構成的。藉由 這些的電磁線圈1 5、1 6,使得由細絲9所射出的電子射 線EB可正確地通過電子通過孔1 4的中心軸,不會與電 子通過孔14的內壁產生衝突,可正確地導引至電子射線 射出窗2 3的中心。 又,在容器3的側部,設有排氣管17。排氣管17的 前端連接於將收容部1 3及電子射線通過孔1 4進行排氣之 -10- 200845046 真空泵18。排氣管17及真空泵18是設置於:當由電子 射線EB的射出軸方向觀看電子射線照射裝置1時,不會 與連接器8重疊之位置。 另外,窗單元4爲電子射線照射裝置1的一端側的構 造體,用來將通過了電子射線通過孔1 4之電子射線EB 射出至容器3的外部之單元。窗單元4具備有:框體 20、窗基板22、及電子射線射出窗23。框體20呈隨著由 基端側朝向前端側,電子射線EB的偏向方向(圖3之X 方向)之寬度擴大的形狀。在框體20的基端側,形成有與 電子射線通過孔14同徑的開口部20a,框體20的前端側 呈矩形開口。又,在框體20的基端側的緣,形成有圓形 的突緣部20b。框體20是定位成開口部20a與電子射線 通過孔1 4成爲同心,氣密地固定於容器3的前端。 在框體20的基端側的突緣部20b的附近,設有偏向 線圈2 1。偏向線圈21爲使通過了電子射線通過孔1 4之 電子射線EB,在框體20內偏向用之線圈。在偏向線圈 21的兩端,分別安裝有L字狀的支承構件21a,偏向線圏 21是配置成:利用以支承構件21a,21a夾入框體20的 基端側的側壁,在框體20,朝與偏向方向正交的側壁之 一方接近。又,偏向線圈21根據由外部電源(未圖示)所 供給的電流値,使通過電子射線通過孔1 4之電子射線EB 的進行方向沿著X方向呈線狀偏向。 窗基板22是藉由例如不銹鋼形成長方形,固定於框 體20的前端。在窗基板22的中央,沿著X方向,以預 -11 - 200845046 定間隔,呈一列地形成有矩形的貫通孔22a。又,電 線射出窗23是藉由例如鈹形成厚度數μηι〜ΙΟμπι左 矩形。電子射線射出窗23針對每個貫通孔22a加 置,以覆蓋各貫通孔22a的前端的方式,軟焊於窗 2 2。藉由偏向線圈2 1朝X方向偏向之電子射線E B 過各電子射線射出窗23,朝裝置外部射出。再者, 體20的前端,形成有設有〇形環之溝(未圖示)。藉 保持窗基板22與框體20之氣密封裝。 其次,說明關於真空室30及搬送滾子40的結構 真空室30是如圖1及圖2所不,藉由例如不绣 形成,呈沿著印刷物p的搬送方向延伸之長方體狀。 空室3 0的一端側的側面,設有用來將印刷物p導入 空室30內之搬入口 31。又,在與搬入口 31相對向 空室3 0的另一端側的側面,設有用來由真空室3 〇內 印刷物P之搬出口 3 2。 在真空室30的上面的中央部分,設有用來固定 射線照射裝置1的框體20之導引部33。導引部33 朝真空室30的上方突出的方式形成長方體狀。在導 3 3的上面側,形成有朝與印刷物P的搬送方向正交 向延伸之矩形的開口部3 3 a。在此開口部3 3 a,以電 線射出窗23朝向真空室30內的方式,供電子射線照 置1的框體20插通。 又,電子射線照射裝置1是在安裝於框體20的 部分即窗基板22之電子射線射出窗23與真空室30 子射 右的 以設 基板 是通 在框 此, 鋼來 在真 至真 的真 排出 電子 是以 引部 的方 子射 射裝 前端 的上 -12- 200845046 面的內壁大致成爲一面的狀態下,固定於導引部33。藉 由這種的結構,真空室3 0內的中央部分成爲:由電子射 線射出窗23所射出的電子射線EB被照射到印刷物P之 位置(以下,稱爲「照射位置Q」)。在照射位置Q,對印 刷物P的表面,照射朝與印刷物P的搬送方向交叉的方向 呈呈線狀偏向之電子射線EB。 搬送滾子40爲用來將印刷物P由搬入口 3 1側朝搬出 口 32側搬送之滾子。搬送滾子40是藉由將EB硬化墨水 在未乾燥的狀態塗佈之印刷物P搬入至真空室3 0內而配 置於真空室30的搬入口側之搬入滾子40a、與爲了將EB 硬化墨水乾燥後的印刷物P搬出至真空室3 0外而配置於 真空室30的搬出口 32側之搬出滾子40b來構成。搬入滾 子4 0a及搬出滾子40b是藉由未圖示的驅動手段,以預定 旋轉速度驅動。 藉此,印刷物P朝如圖1及圖2之Y方向(搬送方向) 被搬送。又,印刷物P通過搬入口 31被導入至真空室30 的內部,在通過照射位置Q後,由搬出口 32排出至真空 室3 0的外部。被排出到真空室3 0的外部之印刷物P,經 由搬出滾子40b,朝下一個製程前進。再者,藉由搬入滾 子40a及搬出滾子40b,在通過真空室30內中的印刷物 P,被施加了預定張力。藉此,防止印刷物P在真空室3 0 內鬆驰,可使電子射線EB照射於印刷物P的全面。 又,爲了將電子射線EB照射至印刷物P,爲了使墨 水的聚合反應不被氧所阻礙,需要將照射位置Q之環境 •13- 200845046 氣體由大氣置換成氮氣並使氧濃度降低。如此’作爲使照 射位置Q之氧濃度降低的結構,如圖2所示,真空室30 具備有:形成氣簾34之一對氣體吹出部(氣體吹出手 段)3 5,3 5 ;設置於真空室3 0內之複數個區隔板3 6 ;及 朝照射位置Q使氮氣流通之第1流路37及第2流路38。 氣體吹出部35分別設置於真空室30的搬入口 31及 搬出口 32。各氣體吹出部35是藉由氮配管39,連接於未 圖示的氮供給裝置。又,搬入口 31側的氣體吹出部35是 對與印刷物P的搬送方向正交的面,朝搬送方向的上游側 傾斜例如45°,搬出口 32側的氣體吹出部35是對與印刷 物P的搬送方向正交的面,朝搬送方向的下流側傾斜例如 45°。在各氣體吹出部35,由氮供給裝置,以例如20公升 /分的流量供給氮氣。藉此,形成帶狀的氣簾,以封住搬 入口 3 1及搬出口 32。 區隔板3 6是藉由例如不銹鋼來形成,分別設置於真 空室3 0的上面側的內壁與下面側的內壁。更具體而言, 在真空室3 0的上面側的內壁,設有一對區隔板3 6a, 3 6 a。此一對區隔板3 6 a,3 6 a以夾持照射位置Q的方式, 與電子射線EB的偏向方向大致呈平行地配置,將真空室 3 0內的空間上部大致分成3等分。 另外,在真空室3 0的下面側的內壁,設有6片的區 隔板3 6b。這些的區隔板3 6b是與區隔板3 6a同樣地,以 夾持照射位置Q的方式,與電子射線EB的偏向方向大致 呈平行地配置’將真空室3 0內的空間下部大致分成7等 -14- 200845046 分。區隔板3 6b是作爲防止當電子射線EB由電子射線照 射裝置1被射出之際,或所射出的電子射線EB被照射到 周邊構造物等之際所稍許產生的X射線洩漏至真空室3 0 外部之遮蔽構件來發揮功能。又,6片的區隔板36b中, 由搬入口 31側觀看時的第2及第5區隔板3 6b,3 6b是與 真空室30的上面側的內壁之區隔板36a,36a相對向。藉 由這種的結構,區隔板36a,36a及區隔板36b,36b成爲 夾持照射位置Q周圍的空間之狀態,其結果,亦可作爲 提高照射位置Q附近的氮氣的密閉效果之構件來發揮功 能。此亦有助於削減電子射線照射系統1之氮消費量。 第1流路3 7是藉由導引部3 3之搬入口 3 1側的內壁 33b、與配置於導引部33內的框體20之搬入口 31側的外 壁2 0b來形成的。第2流路38是藉由導引部33之搬出口 32側的內壁33c、與配置於導引部33內的框體2〇之搬出 口 32側的外壁2〇c來形成的。爲了形成第!流路37及第 2流路3 8,在導引部3 3之搬入口 3 1側的壁部的中央部 分、及夾持此中央部分之兩端部,用來供氮配管3 9插入 的開口部3 3 d沿著與電子射線EB的偏向方向大致呈平行 的方向排列著(參照圖1)。又,關於搬出口 32側的壁部, 也以相同的結構,排列有開口部3 3 d。 各開口部3 3 d,爲了確保第1流路3 7及第2流路3 8 的充分的流路長度,而形成於較導引部3 3的中央部分更 靠近電子槍2側。再者,外壁20b、外壁20c、內壁33b 及內壁33c’分別藉由平滑面來形成。因此’第1流路37 -15- 200845046 及第2流路38,除了形成有開口部33d之部分以外,藉 由無凹凸之平滑面來構成。 在各開口部33d,分別固定氮配管39的前端。氮配 管39的基端連接於未圖示的氮供給裝置。在第1流路 37,以例如10〜30公升/分的流量,由氮供給裝置供給氮 氣。被供給至第1流路3 7之氮氣,藉由氣體沿著壁部流 動的效果(康達效應),一邊沿著框體20之搬入口 3 1側的 外壁20b,一邊朝照射位置Q流通。同樣地,在第2流路 3 8,以例如0〜3 0公升/分的流量,由氮供給裝置供給氮 氣。被供給至第2流路3 8之氮氣也藉由上述的康達效 應,一邊沿著框體20之搬出口 32側的外壁20c,一邊朝 照射位置Q流通。 接著,在上述的在電子射線照射系統1 0 0,當藉由未 圖示的驅動手段,驅動搬入滾子40a及搬出滾子40b時, 塗佈有未乾燥的EB硬化墨水之印刷物P由真空室3 0的 搬入口 3 1側朝搬出口 3 2側被搬送。當印刷物P通過真空 室3 0的搬入口 3 1時,利用以氣體吹出部3 5所形成的氣 簾34,使印刷物P周圍的大氣受到氮氣朝與搬送方向相 反側吹散。另外,藉由設置於搬出口 32側之氣體吹出部 35所形成的氣簾34,可防止大氣由搬出口 32侵入至真空 室30內。藉由這些的氣簾34、34,可謀求真空室內之氮 置換度的提昇。 其次,印刷物P被搬送至真空室3 0內的照射位置 Q。在照射位置Q,沿著框體20之搬入口 3 1側的外壁 -16- 200845046 2 0b流通於第1流路37之氮氣、及沿著框體20之搬出口 32側的外壁20c而流通於第2流路38之氮氣,朝印刷物 P噴附。在此狀態下,由電子射線照射裝置1所射出的電 子射線EB照射至印刷物P。電子射線EB是以高速,一 邊朝印刷物P的搬送方向交叉的方向偏向,一邊照射至印 刷物P的表面,藉此,印刷物P上的EB硬化墨水產生化 學聚合而依次硬化。當電子射線EB由電子射線照射裝置 1射出時,或所射出的電子射線EB照射到周邊構造物等 之際所稍許產生之X射線,藉由區隔板3 6所區隔。 當利用電子射線EB的照射之EB硬化墨水的硬化結 束後,印刷物P由搬出口 3 2排出至真空室3 0的外部。然 後,印刷物P經由搬出滾子40b,被搬送至下一個製程。 如以上説明,在電子射線照射系統1 0 0,在搬送印刷 物P之真空室3 0內配置電子射線照射裝置〗之窗單元4 的框體20。又,在真空室30內,設置有··以沿著框體20 之搬入口 3 1側的外壁20b的方式,朝照射位置q使氮氣 流通之第1流路37 ;與以沿著框體20之搬出口 32側的 外壁20c的方式,朝照射位置Q使氮氣流通之第2流路 38 〇 在第1流路3 7及第2流路3 8,藉由氣體沿著壁部流 動之康逹效應,5周整朝向照射位置Q之氮氣的流動。因 此,在電子射線照射系統1 00,可將流動不均極小的氮氣 供給至照射位置Q,利用以該氮氣置換環境氣體中的氧, 可使照射位置Q之環境氣體中的氧濃度穩定地降低至數 17- 200845046 百ppm以下左右。藉此,防止電子射線EB的照射之墨水 的聚合反應受到氧阻礙’並可確實地進行塗佈於印刷物P 之EB硬化墨水的硬化處理。又’因氮氣是在電子射線射 出窗23與印刷物P之間,朝由電子射線射出窗23遠離的 方向流通,所以’即使在電子射線EB的照射時’由印刷 物P的表面產生飛散物’飛散物也幾乎不會附著於電子射 線射出窗23 ° 又,流通於第1流路3 7之氮氣的流量,較流通於第 2流路3 8之氮氣的流量大。在此,由於第1流路3 7,比 起第2流路3 8更位於搬入口 3 1側,故,流通於第1流路 3 7之鈍氣,比起流通於第2流路3 8之鈍氣,對照射位置 Q之環境氣體中的氧濃度的影響大。因此,藉由將流通於 第1流路3 7之鈍氣的流量做成較流通於第2流路3 8之鈍 氣的流量大,可抑制流通於第1流路3 7之鈍氣干涉於流 通於第2流路3 8之鈍氣’可更確實地降低照射位置Q之 環境氣體中的氧濃度。又’亦可將氮氣的流動不均壓低, 故,亦可抑制由電子射線射出窗23所射出之電子射線EB 因氣流所引起的位置偏移,可謀求硬化處理的確實性提 昇。 且,在電子射線照射系統1 00,分別形成有氮氣之氣 簾34,34,用以遮蔽真空室30的搬入口 31及搬出口 32。搬入口 31側的氣簾34,對與印刷物P的搬送方向正 交的面,朝搬送方向的上游側大約傾斜4 5 °,搬出口 3 2側 的氣簾34 ’對印刷物P的搬送方向正交的面朝搬送方向 -18- 200845046 的下流側大約傾斜45°。藉由這些的氣簾34,能夠防止大 氣進入至真空室30內。又,在印刷物P通過真空室30的 搬入口 31之際,印刷物p周圍的大氣受到氣簾34,朝與 搬送方向相反側吹散。藉此,可除去纒附於印刷物P之大 氣中的氧,可更確實地降低照射位置Q之氧濃度。 又’來自於氣體噴出口 3 5之氮氣的流量,形成較流 通於第1流路3 7之氮氣的流量小爲佳。在此情況,由於 可抑制搬入口 3 1及搬出口 3 2的附近之氣流的紊亂,故, 可更進一步確實地防止大氣進入至真空室30內,可更降 低照射位置Q之氧濃度。 本發明不限於上述實施形態者。例如在上述的實施形 態’在真空室3 0內設置第1流路3 7及第2流路3 8, 但’由使照射位置Q之氧濃度降低的觀點來看,亦可僅 設置第1流路3 7。又,搬入口 3 1側的氣簾34的角度, 若爲朝印刷物P的搬送方向的上游側傾斜即可,亦可因應 印刷物P的搬送速度等,適宜變更。關於這一點,搬出口 3 2側的氣簾3 4的角度也相同。 又’照射對象物不限於印刷物P這樣的長條狀物,亦 可爲預定大小的單體。在此情況,作爲搬送手段,可使用 例如帶式輸送機等。且,不限於墨水的乾燥,亦可使用 於’在線內(inline)進行電子射線EB之殺菌或表面改質等 之情況。 [産業上的利用可能性] 200845046 的暗射 在本發明之電子射線照射系統,可使電子射線日3…、 位置之環境氣體中的氧濃度充分地降低。 【圖式簡單説明】 圖1是顯示本發明的一實施形態之電子射線照射系統 的斜視圖。 圖2是圖1之π-ll線斷面圖。 φ 圖3是顯示電子射線照射裝置的結構之側斷面圖。 圖4是圖3之IV-IV線斷面圖。 t主要元件符號説明】 1 :電子射線照射裝置 4 :窗單元(射出部) 9 :細絲(電子放出構件) 2〇 :框體(射出部) % 20b :外壁(搬入口側的壁部) 2〇c :外壁(搬出口側的壁部) • 30 :真空室 - 3 1 :搬入口 3 2 :搬出口 35 :氣體吹出部(氣體吹出手段) 3 7 :第1流路 3 8 :第2流路 4〇a :搬入滾子(搬送手段) -20- 200845046 40b :搬出滾子(搬送手段) 1 0 0 :電子射線照射系統 EB :電子射線 P :印刷物(照射對象物) Q :照射位置 Y :搬送方向200845046 IX. Description of the Invention [Technical Field of the Invention] The present invention relates to an electron beam irradiation system. [Prior Art] An electron beam irradiation device is a device that accommodates an electron gun that emits electron beams in a container and emits electron beams into the atmosphere through an emission window formed by a film. Such an electron beam irradiation apparatus has, for example, a method of curing an ink applied to an object to be irradiated such as a printed matter. When the electron beam irradiation apparatus is used for this purpose, in order to prevent the polymerization reaction of the ink generated by the irradiation of the electron beam, it is necessary to suppress the oxygen concentration in the ambient gas at the irradiation position of the electron beam to several hundred ppm or less. about. In the technique of suppressing the oxygen concentration in the ambient gas of the irradiation position of the electron beam, for example, the electron beam irradiation device described in Patent Document 1 is provided. In the conventional electron beam irradiation apparatus, an electron beam emitting portion of the electron beam irradiation device is disposed in a vacuum chamber in which an inert gas such as nitrogen gas is introduced, and an electron beam is irradiated to the object to be irradiated in the vacuum chamber. [Patent Document 1] Japanese Patent Publication No. Hei 6-2160. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] In the above-described conventional electron beam irradiation apparatus, the irradiation position of the electric -4-200845046 sub-ray in the vacuum chamber is An introduction nozzle with an blunt gas is provided. However, in such a conventional configuration, the flow path of the blunt gas in the vacuum chamber is not sufficiently considered, and unevenness is likely to occur in the flow rate of the blunt gas toward the object to be irradiated. Therefore, it is difficult to sufficiently reduce the oxygen concentration in the ambient gas at the irradiation position of the electron beam. The present invention has been made to solve the above problems, and an object of the invention is to provide an electron beam irradiation system which can sufficiently reduce the oxygen concentration in an ambient gas at an irradiation position of an electron beam. [Means for Solving the Problem] The electron beam irradiation system of the present invention is characterized in that it includes an electron beam irradiation device having an electron emission member that emits an electron beam, and an irradiation target to be an electron beam. a vacuum chamber for carrying in and out of the object; and a transporting means for transporting the object to be irradiated from the inlet side to the outlet side, and the electron beam irradiation apparatus includes: an electron disposed in the vacuum chamber and emitted by the electron emission member The emitting portion that emits the ray to a predetermined irradiation position in the vacuum chamber has a first flow path that is made to flow toward the irradiation position so as to follow the wall portion on the inlet side of the injection portion. In the electron beam irradiation system, an emission unit of the electron beam irradiation device is disposed in a vacuum chamber in which the object to be irradiated is transported, and a first flow path is provided in the vacuum chamber, and the flow path is along the emission portion toward the inlet side. In the manner of the wall portion, the blunt airflow is made to the irradiation position. In the first flow path, by the effect of the gas flowing along the wall portion (the Coanda effect), the flow of the blunt -5 - 200845046 gas toward the irradiation position can be adjusted. Therefore, in the electron beam irradiation system, the inhomogeneous gas having a small uneven flow can be supplied to the irradiation position, and by replacing the nitrogen gas with the external air component in the ambient gas, the oxygen concentration in the ambient gas at the irradiation position can be sufficiently made. Reduced ground. Further, the vacuum chamber further has a second flow path which is preferably made to flow toward the irradiation position so as to follow the wall portion on the outlet side of the injection portion. In this case, the both sides of the irradiation position can sufficiently supply the passive gas having a small uneven flow to the object to be irradiated, so that the oxygen concentration in the ambient gas at the irradiation position of the electron beam can be more reliably reduced. Further, the flow rate of the blunt gas flowing through the first flow path is preferably larger than the flow rate of the pure gas flowing through the second flow path. Since the channel 1 is located closer to the inlet side than the second channel, the blunt gas flowing through the first channel is an ambient gas that is irradiated to the electron beam than the blunt gas flowing through the second channel. The effect of oxygen concentration is large. Therefore, by making the flow rate of the blunt gas flowing through the first flow path larger than the flow rate of the blunt gas flowing through the second flow path, it is possible to suppress the blunt gas flowing through the first flow path from interfering with the second flow. The blunt gas of the road can further and surely reduce the oxygen concentration in the ambient gas at the irradiation position. Furthermore, it is preferable to provide a gas blowing means which blows off the air to the upstream side in the conveying direction of the object to be irradiated so as to cover the inlet. In this case, the outside air is prevented from flowing into the vacuum chamber from the carry-in port by the blunt gas blown from the gas blowing means. In addition, the blunt gas is blown toward the upstream side in the conveyance direction of the object to be irradiated, and the atmosphere around the object to be irradiated can be blown away in the opposite direction to the port of entry when the object to be irradiated passes through the inlet of the vacuum chamber. -6 - 200845046 [Effect of the Invention] In the electron beam irradiation system of the present invention, the oxygen concentration in the ambient gas at the irradiation position of the electron beam can be sufficiently lowered. [Embodiment] Hereinafter, a preferred embodiment of the electron beam irradiation system of the present invention will be described in detail with reference to the drawings. Fig. 1 is a perspective view showing the structure of an electron beam irradiation system according to an embodiment of the present invention. 2 is a cross-sectional view taken along line II-II of FIG. 1. As shown in FIG. 1 and FIG. 2, the electron beam irradiation system 1 is configured to include an electron beam irradiation device 1 that serves as a source of electron beam EB, and a vacuum chamber 30 that is filled with an inert gas such as nitrogen; The printed matter (irradiation target) p to be irradiated by the electron beam EB is transported to one of the pair of transport rollers (transport means) 40 in the vacuum chamber 30. Before the electron beam irradiation system 1 is reached, the EB hardened ink which is hardened by the irradiation of the electron beam EB on the surface of the printed matter P is applied in an undried state. The electron beam irradiation system 100 is a system for curing the EB-curable ink applied to the printed matter P by irradiating the electron ray EB to the surface of the printed matter P. First, the structure of the electron beam irradiation apparatus 1 will be described. As shown in Figs. 3 and 4, the electron beam irradiation device 1 includes an electron gun 2, a container 3, and a window unit (emitter portion) 4. In the electron beam irradiation apparatus 1, the electron beam EB emitted from the electron gun 2 is directed toward the predetermined direction at a high speed by 200845046, and the electron beam EB is emitted from the window unit 4 in a line shape. The electron gun 2 has a rectangular parallelepiped casing 6; an insulating block 7 formed of a material having electrical insulation; a high-resistance type connector 8; and a filament 9 for discharging an electron beam E B . The outer casing 6 is formed, for example, by metal, and is fixed to the proximal end side of the container 3. The wall of the casing 6 on the side of the container 3 is provided with an opening portion 6a for communicating the inside of the casing 6 with the accommodating space in the container 3. Further, an opening portion 6b for mounting the connector 8 is provided on the side wall of the outer casing 6. The insulating block 7 is formed of an electrically insulating material such as an epoxy resin. The external power supply path from the connector 8 to the filament 9 is insulated from the outside. The insulating block 7 has a base portion 7a housed in the casing 6, and a conical projection 7b projecting from the base portion 7a' toward the accommodating space side in the container 3 through the opening portion 6a. The base portion 7a occupies most of the inside of the casing 6, and is in contact with the opening portion 6a side of the casing 6 and the inner wall on the opening portion 6b side. Further, a conductive film 1 黏 is adhered to the portion of the base portion 7a which is not in contact with the inner wall of the outer casing 6. By electrically connecting the film yoke to the casing 6 as the ground potential, the surface potential of the insulating block 7 facing the inner surface of the casing 6 can be made grounded, and the stability during operation can be improved. The connector 8 is a connector for supplying a power supply voltage to the filament 9 from the outside of the electron beam irradiation apparatus 1. The connector 8 is inserted into the opening portion 6b on the side surface of the casing 6, and is buried in the insulating block 7 and fixed in a state where the front end portion is located near the center of the insulating block 7. At the base end of the connector 8, an insertion port 8a for a power plug for holding a front end of an external wiring extending from a power supply unit (not shown) is provided. Further, a pair of internal wirings 1, 1, 1 1 are connected to the front end of the connector 8. The internal wiring 1 1,1 1 is extended from the front end of the connector 8 to the center of the base portion 7a of the insulating block 7 and the center of the protruding portion 7b to the front end of the protruding portion 7b. The filament 9 is a member for emitting electrons that become electron beams EB. The filament 9 is attached to the front end portion of the protruding portion 7b of the insulating block 7, and is connected to the internal wiring 1 1,1 1 . A grid portion 12 is provided around the filament 9. The gate portion 12 is electrically connected to one of the internal wirings 1,1,1, and when a high voltage is applied to the filament 9, a high voltage is applied to the gate portion 12, and is formed by thinning. The wire 9 leads to an electric field of electrons. The electrons drawn from the filaments 9 are emitted as electron rays EB by holes formed in the center of the gate portion 12. In the case where the emission of the electrons from the filaments 9 is to be more precisely controlled, for example, in the same manner as the internal wirings 1,1,1, the wiring for the additional gate portion 12 is additionally provided, and the filaments 9 are provided. The potential is independent, and the potential of the control gate portion 12 is preferably good. The container 3 is formed in a cylindrical shape extending along the emission axis of the electron beam EB emitted from the filament 9, and is hermetically fixed to the outer casing 6 of the electron gun 2. Inside the proximal end side of the container 3, a cylindrical receiving portion 13 for accommodating the filament 9 of the electron gun 2, the grid portion 12, and the protruding portion 7b of the insulating block 7 is formed. The diameter of the accommodating portion 13 is formed to be larger than the opening portion 6a of the outer casing 6, and extends from the proximal end of the container 3 to the vicinity of the center. Further, inside the front end side of the container 3, an electron beam passage hole 14 communicating with the accommodating portion 13 is formed. The electron beam passing through the hole 14 has a cylindrical shape smaller than the accommodating portion 13 and extends along the emission axis of the electron ray EB from the center of the container 3 to -9-200845046 to the front end of the container 3. An electromagnetic coil 15 and an electromagnetic coil 16 are disposed around the electron beam passage hole 14 along the emission axis of the electron beam EB. The arrangement center of the electromagnetic coil 15 and the electromagnetic coil 16 coincides with the center 'axis' of the electron beam passage hole 14. By the mutual use of the electromagnetic coils 15 and the electromagnetic coils 16, the electron beams EB passing through the electron beam passage holes 14 are bundled toward the electron beam emission window 23 to be described later. More specifically, the electromagnetic coil 15 is used to correct the displacement of the mechanical center of each member passing through the path of the electron gun 2 or the electron beam EB, or the residual magnetic properties of the respective members and the magnetic field around the installation place. The effect of the resulting electron beam EB on the alignment of the desired path (the electron through the central axis of the hole 14) is offset by the alignment coil. In the present embodiment, the two electromagnetic coils 15 are placed in pairs with respect to each other, and the four electromagnetic coils 15 are sandwiched by the electron beam passage holes 14 and arranged at a phase angle of 90 degrees, and are required as needed. Use it. In addition, the electromagnetic coil φ 16 is a bundle coil for collecting the electron beams EB emitted from the electron gun 2 in the electron beam exit window 23, and is formed by a cylindrical coil portion formed of an enamel wire or the like and soft iron. The magnetic circuit is constructed. With these electromagnetic coils 15, 5, 6, the electron ray EB emitted by the filament 9 can pass through the central axis of the hole 14 through the electron, and does not collide with the inner wall of the electron passage hole 14, It is correctly guided to the center of the electron beam exit window 23. Further, an exhaust pipe 17 is provided at a side portion of the container 3. The front end of the exhaust pipe 17 is connected to a -10-200845046 vacuum pump 18 that exhausts the accommodating portion 13 and the electron ray through the hole 14. The exhaust pipe 17 and the vacuum pump 18 are provided at positions where they do not overlap the connector 8 when the electron beam irradiation device 1 is viewed from the direction of the emission axis of the electron beam EB. Further, the window unit 4 is a structure on one end side of the electron beam irradiation apparatus 1 for emitting electron beams EB passing through the electron beam passage holes 14 to the outside of the container 3. The window unit 4 includes a housing 20, a window substrate 22, and an electron beam emitting window 23. The frame body 20 has a shape in which the width of the electron beam EB in the deflecting direction (X direction in Fig. 3) is increased from the base end side toward the tip end side. On the proximal end side of the casing 20, an opening 20a having the same diameter as the electron beam passage hole 14 is formed, and the front end side of the casing 20 has a rectangular opening. Further, a circular flange portion 20b is formed on the edge of the proximal end side of the casing 20. The casing 20 is positioned such that the opening 20a is concentric with the electron beam passage hole 14 and is hermetically fixed to the front end of the container 3. A deflection coil 21 is provided in the vicinity of the flange portion 20b on the proximal end side of the casing 20. The deflection coil 21 is a coil that is biased toward the inside of the casing 20 by the electron beam EB that has passed through the electron beam passage hole 14. The L-shaped support member 21a is attached to both ends of the deflection coil 21, and the deflection coil 21 is disposed so as to be sandwiched between the support members 21a and 21a on the proximal end side of the frame body 20, and the frame body 20 is placed on the frame body 20. , approaching one of the side walls orthogonal to the deflection direction. Further, the deflection coil 21 deflects the direction in which the electron beams EB passing through the electron beam passage holes 14 are linearly aligned in the X direction in accordance with the current 値 supplied from an external power source (not shown). The window substrate 22 is formed in a rectangular shape by, for example, stainless steel, and is fixed to the front end of the casing 20. In the center of the window substrate 22, rectangular through holes 22a are formed in a row at intervals of -11 - 200845046 along the X direction. Further, the wire exit window 23 is formed by, for example, 铍 forming a rectangle having a thickness of μηι to ΙΟμπι left. The electron beam emitting window 23 is provided for each of the through holes 22a so as to cover the front end of each of the through holes 22a, and is soldered to the window 22. The electron beams E B deflected toward the X direction by the deflection coil 2 1 pass through the respective electron beam emission windows 23 and are emitted toward the outside of the device. Further, a groove (not shown) provided with a beak ring is formed at the front end of the body 20. The window substrate 22 and the frame 20 are hermetically sealed. Next, the structure of the vacuum chamber 30 and the transport roller 40 will be described. The vacuum chamber 30 is formed in a rectangular parallelepiped shape extending in the transport direction of the printed matter p by, for example, not embroidering, as shown in Figs. 1 and 2 . The side surface on one end side of the empty chamber 30 is provided with a transfer inlet 31 for introducing the printed matter p into the empty chamber 30. Further, on the side surface on the other end side of the empty chamber 30 opposite to the carry-in port 31, a carry-out port 3 2 for printing the object P in the vacuum chamber 3 is provided. A guide portion 33 for fixing the frame 20 of the radiation irradiating device 1 is provided at a central portion of the upper surface of the vacuum chamber 30. The guide portion 33 is formed in a rectangular parallelepiped shape so as to protrude upward from the vacuum chamber 30. On the upper surface side of the guide 33, an opening portion 3 3 a which is formed in a rectangular shape extending orthogonally to the conveyance direction of the printed matter P is formed. In this opening portion 3 3 a, the casing 20 for the electron beam irradiation 1 is inserted so that the electric discharge window 23 faces the inside of the vacuum chamber 30. Further, in the electron beam irradiation apparatus 1, the electron beam emitting window 23, which is a portion of the window substrate 22 attached to the casing 20, and the vacuum chamber 30 are directed to the right side, and the substrate is placed in the frame, and the steel is true. The true discharge electrons are fixed to the guide portion 33 in a state where the inner wall of the upper -12-200845046 surface of the front end of the square projection frame of the lead portion is substantially one surface. With this configuration, the central portion of the vacuum chamber 30 is at a position where the electron beam EB emitted from the electron emission window 23 is irradiated to the printed matter P (hereinafter referred to as "irradiation position Q"). At the irradiation position Q, the surface of the printed matter P is irradiated with an electron beam EB which is linearly deflected in a direction intersecting the conveyance direction of the printed matter P. The transport roller 40 is a roller for transporting the printed matter P from the side of the carry-in port 3 1 toward the side of the carry-out port 32. The transport roller 40 is placed in the vacuum chamber 30 by the printed matter P coated with the EB-cured ink in an undried state, and is placed in the loading roller 40a on the inlet side of the vacuum chamber 30, and in order to harden the ink for EB. The printed matter P after drying is carried out to the outside of the vacuum chamber 30, and is disposed in the carry-out roller 40b on the side of the discharge port 32 of the vacuum chamber 30. The carry-in roller 40a and the carry-out roller 40b are driven at a predetermined rotational speed by a driving means (not shown). Thereby, the printed matter P is conveyed in the Y direction (transport direction) as shown in FIGS. 1 and 2 . Further, the printed matter P is introduced into the inside of the vacuum chamber 30 through the carry-in port 31, and is discharged to the outside of the vacuum chamber 30 by the carry-out port 32 after passing through the irradiation position Q. The printed matter P discharged to the outside of the vacuum chamber 30 is carried forward to the next process by the carry-out roller 40b. Further, by carrying in the roller 40a and carrying out the roller 40b, a predetermined tension is applied to the printed matter P passing through the inside of the vacuum chamber 30. Thereby, the printed matter P is prevented from relaxing in the vacuum chamber 30, and the electron beam EB can be irradiated onto the entire surface of the printed matter P. Further, in order to irradiate the electron beam EB to the printed matter P, in order to prevent the polymerization reaction of the ink from being hindered by oxygen, it is necessary to replace the atmosphere of the irradiation position Q with the atmosphere by nitrogen to reduce the oxygen concentration. As a configuration for reducing the oxygen concentration of the irradiation position Q, as shown in FIG. 2, the vacuum chamber 30 is provided with a gas blowing portion (gas blowing means) 3 5, 3 5 for forming the air curtain 34; a plurality of partition plates 3 6 in the range of 30; and a first flow path 37 and a second flow path 38 through which nitrogen gas flows toward the irradiation position Q. The gas blowing portions 35 are provided in the inlet 31 and the outlet 32 of the vacuum chamber 30, respectively. Each of the gas blowing portions 35 is connected to a nitrogen supply device (not shown) by a nitrogen pipe 39. In addition, the gas blowing portion 35 on the side of the inlet 31 is inclined to the upstream side in the conveying direction by, for example, 45° on the upstream side in the conveying direction, and the gas blowing portion 35 on the side of the outlet 32 is a pair of the printed matter P. The surface orthogonal to the conveyance direction is inclined by, for example, 45° toward the downstream side in the conveyance direction. In each of the gas blowing portions 35, nitrogen gas is supplied from a nitrogen supply device at a flow rate of, for example, 20 liters/min. Thereby, a belt-shaped air curtain is formed to seal the inlet 3 1 and the outlet 32. The partition plates 36 are formed, for example, of stainless steel, and are provided on the inner wall on the upper surface side of the vacuum chamber 30 and the inner wall on the lower surface side, respectively. More specifically, a pair of partition plates 3 6a, 3 6 a are provided on the inner wall of the upper surface side of the vacuum chamber 30. The pair of partition plates 3 6 a, 3 6 a are disposed substantially in parallel with the deflecting direction of the electron beam EB so as to sandwich the irradiation position Q, and the upper portion of the space in the vacuum chamber 30 is roughly divided into three equal parts. Further, on the inner wall of the lower surface side of the vacuum chamber 30, six partition plates 36b are provided. In the same manner as the partition plate 36a, the partition plate 36b is disposed so as to be substantially parallel to the deflecting direction of the electron beam EB so as to sandwich the irradiation position Q, and the lower portion of the space in the vacuum chamber 30 is roughly divided. 7 and so on -14,450,46 points. The partition plate 3 6b is for preventing leakage of X-rays generated to the vacuum chamber 3 when the electron beam EB is emitted from the electron beam irradiation device 1 or when the emitted electron beam EB is irradiated to the peripheral structure or the like. 0 The external shielding member functions. Further, in the six partition plates 36b, the second and fifth zone partitions 36b, 36b when viewed from the side of the inlet 31 are partitions 36a, 36a of the inner wall on the upper side of the vacuum chamber 30. Relative. With such a configuration, the partition plates 36a and 36a and the partition plates 36b and 36b are in a state of sandwiching the space around the irradiation position Q, and as a result, they can be used as a member for improving the sealing effect of nitrogen gas in the vicinity of the irradiation position Q. Come to play the function. This also helps to reduce the nitrogen consumption of the electron beam irradiation system 1. The first flow path 3 7 is formed by the inner wall 33b on the side of the inlet 3 1 of the guide portion 33 and the outer wall 20b on the side of the inlet 31 of the frame 20 disposed in the guide portion 33. The second flow path 38 is formed by the inner wall 33c on the side of the delivery port 32 of the guide portion 33 and the outer wall 2〇c on the side of the delivery port 32 of the frame body 2 disposed in the guide portion 33. In order to form the first! The flow path 37 and the second flow path 3 8 are used for the insertion of the nitrogen pipe 39 at the central portion of the wall portion on the side of the inlet 3 1 of the guide portion 33 and the both end portions of the central portion. The openings 3 3 d are arranged in a direction substantially parallel to the direction in which the electron beams EB are deflected (see FIG. 1 ). Further, the wall portion on the side of the outlet 32 is also provided with an opening portion 3 3 d in the same configuration. Each of the openings 3 3 d is formed closer to the electron gun 2 side than the central portion of the guide portion 33 in order to secure a sufficient flow path length of the first flow path 3 7 and the second flow path 3 8 . Further, the outer wall 20b, the outer wall 20c, the inner wall 33b, and the inner wall 33c' are each formed by a smooth surface. Therefore, the first flow path 37 -15 - 200845046 and the second flow path 38 are formed by a smooth surface having no irregularities, except for the portion where the opening portion 33d is formed. The tip end of the nitrogen pipe 39 is fixed to each of the openings 33d. The base end of the nitrogen pipe 39 is connected to a nitrogen supply device (not shown). In the first flow path 37, nitrogen gas is supplied from the nitrogen supply means at a flow rate of, for example, 10 to 30 liters/minute. The nitrogen gas supplied to the first flow path 37 is circulated toward the irradiation position Q along the outer wall 20b on the side of the inlet 3 1 of the casing 20 by the effect of the gas flowing along the wall portion (the Coanda effect). . Similarly, in the second flow path 3, the nitrogen gas is supplied from the nitrogen supply means at a flow rate of, for example, 0 to 30 liters/minute. The nitrogen gas supplied to the second flow path 38 is also distributed toward the irradiation position Q along the outer wall 20c on the side of the outlet 32 of the casing 20 by the above-described Kangda effect. Then, in the above-described electron beam irradiation system 100, when the loading roller 40a and the carrying roller 40b are driven by a driving means (not shown), the printed matter P coated with the undried EB hardening ink is vacuumed. The transfer inlet 3 1 side of the chamber 30 is conveyed toward the transfer port 3 2 side. When the printed matter P passes through the inlet 3 1 of the vacuum chamber 30, the atmosphere around the printed matter P is blown off by the atmosphere around the printed material P by the air curtain 34 formed by the gas blowing portion 35. Further, the air curtain 34 formed by the gas blowing portion 35 provided on the side of the outlet 32 prevents the atmosphere from entering the vacuum chamber 30 by the outlet 32. With these air curtains 34 and 34, the degree of nitrogen substitution in the vacuum chamber can be improved. Next, the printed matter P is transported to the irradiation position Q in the vacuum chamber 30. At the irradiation position Q, the nitrogen gas flowing through the first flow path 37 along the outer wall-16-200845046 20b on the side of the inlet 3 1 of the casing 20 is distributed along the outer wall 20c on the side of the outlet 32 of the casing 20. The nitrogen gas in the second flow path 38 is sprayed toward the printed matter P. In this state, the electron beam EB emitted from the electron beam irradiation device 1 is irradiated onto the printed matter P. The electron beam EB is irradiated onto the surface of the printed matter P while being deflected in a direction in which the transport direction of the printed matter P intersects, whereby the EB hardened ink on the printed matter P is chemically polymerized and sequentially hardened. When the electron beam EB is emitted from the electron beam irradiation device 1, or the emitted electron beam EB is irradiated to a peripheral structure or the like, X-rays which are slightly generated are separated by the partition plate 36. When the hardening of the EB hardening ink by the irradiation of the electron beam EB is completed, the printed matter P is discharged to the outside of the vacuum chamber 30 by the discharge port 32. Then, the printed matter P is transported to the next process via the carry-out roller 40b. As described above, in the electron beam irradiation system 100, the casing 20 of the window unit 4 of the electron beam irradiation apparatus is disposed in the vacuum chamber 30 where the printed matter P is conveyed. Further, in the vacuum chamber 30, the first flow path 37 through which nitrogen gas flows toward the irradiation position q is provided so as to follow the outer wall 20b on the side of the inlet 3 1 of the casing 20; In the manner of the outer wall 20c on the side of the outlet 32, the second flow path 38 through which the nitrogen gas flows toward the irradiation position Q is caused to flow in the first flow path 37 and the second flow path 3, and the gas flows along the wall portion. The Kangxi effect, the flow of nitrogen gas toward the irradiation position Q for 5 weeks. Therefore, in the electron beam irradiation system 100, nitrogen gas having a small flow unevenness can be supplied to the irradiation position Q, and by replacing the oxygen in the ambient gas with the nitrogen gas, the oxygen concentration in the ambient gas at the irradiation position Q can be stably lowered. It is approximately 17-200845046 or less. Thereby, the polymerization reaction of the ink for preventing the irradiation of the electron beam EB is inhibited by oxygen, and the hardening treatment of the EB-curable ink applied to the printed matter P can be surely performed. In addition, since nitrogen flows between the electron beam emitting window 23 and the printed matter P in a direction away from the electron beam emitting window 23, 'even when the electron beam EB is irradiated', a scattering material is generated from the surface of the printed matter P. The object also hardly adheres to the electron beam emitting window 23°, and the flow rate of the nitrogen gas flowing through the first channel 37 is larger than the flow rate of the nitrogen gas flowing through the second channel 38. Here, since the first flow path 3 7 is located closer to the inlet 3 1 than the second channel 3 8 , the blunt gas flowing through the first channel 37 is distributed to the second channel 3 . The blunt gas of 8 has a large influence on the oxygen concentration in the ambient gas at the irradiation position Q. Therefore, the flow rate of the blunt gas flowing through the first flow path 37 is made larger than the flow rate of the blunt gas flowing through the second flow path 38, thereby suppressing the blunt gas interference flowing through the first flow path 37. The blunt gas flowing through the second flow path 38 can more reliably reduce the oxygen concentration in the ambient gas at the irradiation position Q. Further, the flow unevenness of nitrogen gas can be lowered, so that the positional deviation caused by the air current emitted from the electron beam EB emitted from the electron beam emitting window 23 can be suppressed, and the reliability of the hardening treatment can be improved. Further, in the electron beam irradiation system 100, nitrogen curtains 34, 34 are formed to shield the inlet 31 and the outlet 32 of the vacuum chamber 30, respectively. The air curtain 34 on the side of the inlet 31 is inclined by about 45° toward the upstream side in the conveyance direction on the surface orthogonal to the conveyance direction of the printed matter P, and the air curtain 34' on the side of the outlet 3 2 is orthogonal to the conveyance direction of the printed matter P. The downstream side of the transport direction -18- 200845046 is inclined by approximately 45°. With these air curtains 34, it is possible to prevent the atmosphere from entering the vacuum chamber 30. When the printed matter P passes through the carry-in port 31 of the vacuum chamber 30, the atmosphere around the printed matter p is blown by the air curtain 34 toward the side opposite to the transport direction. Thereby, the oxygen attached to the atmosphere of the printed matter P can be removed, and the oxygen concentration at the irradiation position Q can be more reliably reduced. Further, the flow rate of the nitrogen gas from the gas discharge port 35 is preferably smaller than the flow rate of the nitrogen gas flowing through the first flow path 37. In this case, since the disturbance of the airflow in the vicinity of the inlet 3 1 and the outlet 3 2 can be suppressed, the atmosphere can be prevented from entering the vacuum chamber 30 more reliably, and the oxygen concentration of the irradiation position Q can be further reduced. The present invention is not limited to the above embodiments. For example, in the above-described embodiment, the first flow path 3 7 and the second flow path 3 8 are provided in the vacuum chamber 30. However, from the viewpoint of lowering the oxygen concentration of the irradiation position Q, only the first one may be provided. Flow path 3 7. In addition, the angle of the air curtain 34 on the side of the inlet 3 1 may be inclined toward the upstream side in the conveyance direction of the printed matter P, and may be appropriately changed depending on the conveyance speed of the printed matter P or the like. In this regard, the angles of the air curtains 34 on the side of the outlet 3 2 are also the same. Further, the object to be irradiated is not limited to a long article such as the printed matter P, and may be a monomer of a predetermined size. In this case, for example, a belt conveyor or the like can be used as the conveying means. Further, it is not limited to the drying of the ink, and it may be used in the case of "inline" sterilization of the electron ray EB or surface modification. [Industrial Applicability] The dark radiation of 200845046 In the electron beam irradiation system of the present invention, the oxygen concentration in the ambient gas at the position of the electron beam 3 can be sufficiently lowered. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing an electron beam irradiation system according to an embodiment of the present invention. Figure 2 is a cross-sectional view taken along line π-ll of Figure 1. φ Fig. 3 is a side sectional view showing the structure of the electron beam irradiation apparatus. Figure 4 is a sectional view taken along line IV-IV of Figure 3; t Main element symbol description] 1 : Electron beam irradiation device 4 : Window unit (ejecting unit) 9 : Filament (electron emitting member) 2〇: Frame (injection unit) % 20b : Outer wall (wall portion on the inlet side) 2〇c : outer wall (wall portion on the outlet side) • 30: vacuum chamber - 3 1 : inlet 3 2 : outlet 35 : gas blowing unit (gas blowing means) 3 7 : first flow path 3 8 : 2 Flow path 4〇a : Carrying in the roller (transport means) -20- 200845046 40b : Carrying out the roller (transport means) 1 0 0 : Electron beam irradiation system EB : Electron beam P : Printed matter (irradiation target) Q : Irradiation Position Y: transport direction

-21 --twenty one -

Claims (1)

.200845046 十、申請專利範園 1. 一種電子射線照射系統,其特徵爲: 具備有: 裝 搬 P 於 子 部 流 其 述 使 其 刖 其 入 具有放出電子射線的電子放出構件之電子射線照射 * 置; - 具有成爲前述電子射線的照射對象之照射對象物的 入口及搬出口之真空室;及 將前述照射對象物由前述搬入口側搬送至前述搬出 側之搬送手段, 前述電子射線照射裝置具有射出部,該射出部配置 前述真空室內,將由前述電子放出構件所放出的前述電 射線朝前述真空室內的預定照射位置射出, 前述真空室具有第1流路,該流路以沿著前述射出 之前述搬入口側的壁部的方式,朝前述照射位置使鈍氣 通。 φ 2.如申請專利範圍第1項之電子射線照射系統, 中,前述真空室進一步具有第2流路,該流路以沿著前 射出部之前述搬出口側的壁部的方式,朝前述照射位置 鈍氣流通。 _ 3.如申請專利範圍第2項之電子射線照射系統, 中,流通於前述第1流路之前述鈍氣的流量是較流通於 述第2流路之前述鈍氣的流量大。 · 4.如申請專利範圍第1項之電子射線照射系統, 中,進一步具有氣體吹出手段,該手段是以遮蔽前述搬 -22- 200845046 口的方式,朝前述照射對象物的搬送方向的上游側吹出鈍 氣。.200845046 X. Application for Patent Park 1. An electron beam irradiation system characterized by: having: loading and unloading P into a sub-portion and causing it to be injected into an electron emission device having an electron emission member that emits electron beams* And a vacuum chamber having an inlet and an outlet for irradiating the object to be irradiated with the electron beam; and a transporting means for transporting the object to be irradiated from the inlet side to the carry-out side, wherein the electron beam irradiation apparatus has The emitting portion is disposed in the vacuum chamber, and emits the electric ray emitted from the electron emitting member toward a predetermined irradiation position in the vacuum chamber, wherein the vacuum chamber has a first flow path along which the flow path is emitted In the manner of the wall portion on the inlet side, the air is blunt toward the irradiation position. In the electron beam irradiation system of the first aspect of the invention, the vacuum chamber further includes a second flow path that faces the wall portion on the outlet side of the front injection portion. The illuminating position is blunt. 3. The electron beam irradiation system according to the second aspect of the invention, wherein the flow rate of the blunt gas flowing through the first flow path is larger than the flow rate of the blunt gas flowing through the second flow path. 4. The electron beam irradiation system according to the first aspect of the invention, further comprising a gas blowing means for shielding the upstream side of the object to be irradiated in such a manner as to block the port 22-2204446 Blow out a blunt gas. -23--twenty three-
TW96142859A 2006-11-24 2007-11-13 Electron beam irradiation system TW200845046A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006317495A JP4490409B2 (en) 2006-11-24 2006-11-24 Electron beam irradiation system

Publications (1)

Publication Number Publication Date
TW200845046A true TW200845046A (en) 2008-11-16

Family

ID=39429607

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96142859A TW200845046A (en) 2006-11-24 2007-11-13 Electron beam irradiation system

Country Status (3)

Country Link
JP (1) JP4490409B2 (en)
TW (1) TW200845046A (en)
WO (1) WO2008062669A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115672698A (en) * 2022-11-04 2023-02-03 湖北豪尔特智能装备有限公司 Production line for radiation curing of plate surface coating
CN115739564A (en) * 2022-11-04 2023-03-07 湖北豪尔特智能装备有限公司 A processing line body that is used for anaerobic device of radiation curing and has it

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5454299B2 (en) * 2009-03-30 2014-03-26 大日本印刷株式会社 Foam wallpaper
JP6735134B2 (en) 2016-04-18 2020-08-05 日立造船株式会社 Nozzle type electron beam irradiation device and electron beam sterilization equipment equipped with the same
JP6774012B2 (en) * 2016-06-28 2020-10-21 ウシオ電機株式会社 Light irradiation device and photocuring device equipped with this
JP7139700B2 (en) * 2018-06-07 2022-09-21 コニカミノルタ株式会社 Active energy ray irradiation device and inkjet printer
DE102018130287A1 (en) * 2018-11-29 2020-06-04 Koenig & Bauer Ag Rotary printing machine with at least one printing unit for printing on substrates
JP2020195969A (en) * 2019-06-04 2020-12-10 トヨタ自動車株式会社 Coating curing device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0560899A (en) * 1991-09-02 1993-03-12 Nissin High Voltage Co Ltd Electron beam irradiation device
JP2000009900A (en) * 1998-06-26 2000-01-14 Toyo Ink Mfg Co Ltd Electron beam irradiation device and electron beam irradiation method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115672698A (en) * 2022-11-04 2023-02-03 湖北豪尔特智能装备有限公司 Production line for radiation curing of plate surface coating
CN115739564A (en) * 2022-11-04 2023-03-07 湖北豪尔特智能装备有限公司 A processing line body that is used for anaerobic device of radiation curing and has it

Also Published As

Publication number Publication date
JP4490409B2 (en) 2010-06-23
WO2008062669A1 (en) 2008-05-29
JP2008128969A (en) 2008-06-05

Similar Documents

Publication Publication Date Title
TW200845046A (en) Electron beam irradiation system
US7436075B2 (en) Ion beam irradiation apparatus and ion beam irradiation method
US6545398B1 (en) Electron accelerator having a wide electron beam that extends further out and is wider than the outer periphery of the device
TWI611847B (en) System for depositing one or more layers on a substrate supported by a carrier and method using the same
CN102264436B (en) Particle radiation therapy apparatus
US8698095B2 (en) Charged particle beam drawing apparatus and article manufacturing method
WO2017141738A1 (en) Substrate processing device and substrate processing method
TW530318B (en) Electron beam treatment apparatus
JPH11345583A (en) Ion source and plasma electrode therefor
TWI792220B (en) particle wire device
KR20120100694A (en) Method of ion beam irradiation and system the same
TWI241219B (en) Substrate processing apparatus
US6867422B1 (en) Apparatus for ion implantation
JP2000009900A (en) Electron beam irradiation device and electron beam irradiation method
TW201925862A (en) Flat panel display manufacturing device
JP2019173066A (en) Substrate processing apparatus and method of controlling the same, film deposition apparatus, and method of manufacturing electronic component
KR20150144054A (en) Apparatus for providing ion beam and system for removing static electricity in high vacuum including the apparatus
JP2010020094A (en) Sputtering apparatus, and apparatus for manufacturing liquid crystal device
CN109957752B (en) Substrate processing apparatus, method of controlling the same, film forming apparatus, and method of manufacturing electronic component
US20160020116A1 (en) Plasma reactor with conductive member in reaction chamber for shielding substrate from undesirable irradiation
JPH04145400A (en) Electron-ray radiation apparatus
TW202301428A (en) Negative ion irradiation device and control method thereof wherein the negative ion irradiation device includes a control unit and a gas supply unit
KR101839797B1 (en) Radiation shielding X-ray ionizer
JP4178329B2 (en) Ion beam formation for uniform large area
JP2002341100A (en) Electron beam irradiation device