200832505 九、發明說明： 【發明所屬之技術領域】 ^本發明涉及基板製造。更具體地說，本發明提供了一種技術， 該技術包括用製造半導體積體電路器件所用的鍵合技術來形 層，板結構的方法和結構。根據一種具體實施例，這樣的鍵合 術匕括使用熱處理來建立鍵合介面，所述鍵合介面基本上沒 或其他不期望的特徵。在—種優選實施例中，熱處理 休二1戸，待除ΐ的鍵合對（bonded pair)之間介面區域遷移到更 以^用二ί °但是應當明白，本發财更廣闊的應用範圍，還可 祙ϋ:他類型基板來對集成半導體器件、光子器件、壓電哭 哭、陽系統（“廳⑽”）、奈米技術結構、感測 封裝動太％此琶池、生物學器件和生物醫學器件等進行三 【先前技術】 用的ίϊ在都用較低價值材料來構造使 構單元組裝而成：或者，將較小的元件或結 實用性。這些要分離的物辨物體分成較小份來提高其 如玻璃板、鑽；5、半導體心 111 f ?1包括基板結構，例 來將這些基板結椹土板、1、平板―器等。通常用各種技術 可以用鑛切操作來將或分離(separate)。在某些情況下， 工具來進行，所鋸切操作通常依靠旋轉的刀片或 塊。但是，這種枯仗3、具‘切過基板材料’將基板材料分成兩 工具和元件進行精’―般不能用來爲製造精密 或切開特別硬卜’ _喿作常常難以分割 以有效地用於製造微★子絲n鑽石或玻璃）。㈣操作還難 因此，已ϋ牛’包括積體電路器件等。 器件常術⑶這些微電子 爲“平面化巧”触 200832505 被認爲是積體電路的創 號伙述了-種早期“術的示 控制，=些設括在目前的設備中並對其進行 設備。 兒&仃動包逢、玩具、汽車以及各種醫療 爲了 於最初所設想到的。 數目）方面I=_給定晶片區域上的器件 何結構也麵11件的“幾 電路密度的增大ί僅提路已變得越來越小。 者提供了更廉價的&_的_度和性能，也給消費 用的ί ί ί Hi t 戰口的因，，電路製造中所 ，ϊ設ΐ越來越快，特定傳統工藝和材料會產生工敲 工蓺广，。一種常用於使這些器件層變薄的傳統 、，:吊被％局日日月研磨，它常常报困難並容易造成哭 層ϊ薄到一定厚度。儘管已有-些明ί改善乂但 疋这種日日月研磨工蟄仍然有許多限制。 一 部分=日糊？來從較大的施體（d_)基板 ϋ it 移工藝已用於製造特定基板結構，例如 或頦不基板。僅作爲一個示例’ F娜ois j· Hen㈣和 ^ an ung開發了一種開拓性的技術來解理材料膜。 〇>_= aeaving P_ss”並轉讓加州聖荷西市的siii_ ?ne:rOTatlon的美國專利第6,013,563號中描述了這樣的技 術，该申⑽任何目的而通過引用而接合於此。儘管這樣的技^ 已經很成功，但是仍然期望對製造多層結構的更好方式。 綜上所述可以看到’需要一種具有良好成本效果比的、有效 200832505 的技術來製造大基板 【發明内容】 合基分離鍵 =1=採 時，仔細控制由電動機^動的^的上低 解理操作的設傭可以包括吸;以速戶=二:她 一鈿纟又置來繞基座回轉，所述第二端且 榀所边弟 接觸的吸取部件。電動機向臂施加力?力jf j ?ίί片對，的張力。電動機設置來使臂以受 用刀片啓動解理時減小所施加的張力 束今iii體f施情況’可以獲得這些好處中的-項或多項。 °曰’寸別是下文，說明了這些好處以及其他的好處。、 【實施方式】 種用於將鍵合基板解理的方法和裝置，j：换用腺〃/辟A 到鍵合基板的張力與啓動局部解理的又“加 ϊ荷，使得隨後全面解二 ί;第所Ϊ;，設置來將吸= 亏端’所述第一端設置來繞基座回轉,所“！ ^，所述的力被轉化爲施加在鍵合晶片=動3臂施加 所施加的張力 方式運動，而在用別啓動解理時減小 根據本發明一種實施例的解理處理可以使用圖1中剖視圖所 200832505 述的設備100來進行。具體地説，通過吸盤104和106將鍵合晶 片對102緊固在適當位置。底部吸盤104固定到設備基座1〇8:g 部吸盤106緊固到伸長臂110,所述伸長臂沿著z軸以可樞轉的方 式與電動機111相連。處理器113的設置是爲了對電動機ln的择 作進行控制。負載單元115的設置是爲了對臂上存在的力進行才= 測。 如圖所示線性可變差動變送器（LVDT)119位於基座108上， 其尖端處於縮回狀態。LVDT 119可以延伸，以檢測鍵合晶片對的 垂直位置。刀片112的設置是爲了要施加到鍵合晶片對1〇2侧面 的精確位置，以便啓動解理處理。 根據本發明的設備一種實施例具有下述外形尺寸· 40，’Wx40”Dx94”H ( 178cm Wxl52cm Dx203cm H)。該設備使用下 述電元件：208V 3φ ; 20Amp ; 60Hz。該設備使用步進電動機，並 =用25-28’’Hg/8cfm/2241iter/min的真空。該設備包括廢氣壓力 管逞（exhaust pressure manif〇M)來容納廢氣。系統的氣厚 60-100pSi/4.：U6.9bar。該設備的設置是爲了每小時解理約3〇^固 8”/200mm鍵合晶片對。該設備使用機械手作業系統，其中各配置 有2盒平臺（在分離之後，丨送出，2接收），機械手是as^t 21 5L，預對準器（pre_aligner)是非接觸集成系統，順序和速产的 規則可編程確定，對準器角度的規則也可編程確定。 又、 %^ 22 ίΓί f喊理開贿以及__的示賴。具體地 1 3晶片對102 ’其形式是施體基板102a沿鍵合介面 fit到處理晶片1G2b°以施加張力的過程中所示的方式，從 伸長臂110使用刀片112，給施體基板102ai成沿 ϊ 縫’從而以絕緣體上邦〇1)技術中期望的方 式二到s熱氧化物的操作晶片和上覆蓋的半導體層。 明暸的簡化曲線_及圖4的簡化流程圖說 理之後，日μ種貝施例。具體地說，在通過鍵合處理進行處 作晶片上的膜。 〜刀。』鉍體曰曰片轉移到操 在處理流程_的第一個步驟402，將鍵合晶片對放在設備 200832505 内。Γΐ盤ίί真[而將鍵合晶片對緊固在適當位置。 解理的規定張力，施加到鍵合^^’==轉，臂巧以啓動 在某些實施例巾，這條力設定fiA f =力技點A。 在第三個步驟406，一旦已達 ^^ 5碎。 us 弟一矛壬度Β。在步驟408，對設備的雷叙搪 2 +低到 的張力一旦減小到初始設定之下的仃編程，使得監視到 就發生指定的運動。如步驟彻所見疋$ (例如減小到程度B) 續轉動，制先紐合的晶片完全^離根據程式的規定連 在圖5所示的具體示例中，伸長 元讀數F〜30,〇〇〇。負載單元讀數F 負載單 形式：在初始階段（t=G.4)過本發明的基本操作 機的運動控制或限制的較慢駐解^。夂k+ & ’隨後是由電動 如上所示，爲了獲得均勻解理 始階段與全面解理正確地結合。這可以理的初 =運動來完成。圖6晝出了圖！的設備中g 的角位置隨無量綱（AU)時間的變化。 為貝IV、的和、4¾ 現·ί始與全面解理的期望結合可以通過如下方式與 現·在初始解理階段完成之前，即在張力 下方式貝 fr降的同時，使經過編程的電動機運動啓:片而 嗖定^觸編程的電動機運動的張力（stra^Del=數)° 完成之後才啓動電動機）；以及 小值，以免在初始過程 2)採用足夠高的角加速度（Acei表數） 成之後，解理的進行可採非常快速的初始階段相“ 11 200832505 行，從而確保初始解理階段與主解理階段之間的無縫過渡。 由此，兩個區域中被解理表面的粗糙度可以相當。& 如前所述，角加速度Acel (處理基板與施體基&直 可以夸初始解猶段與續理階段之間獲得無_渡罝刀離) 速度芩數是一個重要的輸入解理工藝參數。 加 、，可以調整其他參數來控制解理工藝。下面的表丨中 7 這，麥數，與它們在控制設備工作的軟體中出現的形一 步的綱。這錢型奴是針對解理 表1 解理工藝參數名 解理工藝參數定義 典型設定 Strain 足以穩定産生解理的張力 -5000 點 Strain increments 從解理閉合位置獲得應變數 的角度增量 0.001弧度 Number of pulls 達到應變的角度旋轉累計增 加數 40@Strain increment Strain delta 應變設定點-起始後的應 變==使經編程的電動機運動 啓動的設定點 2000 點 Move一after一split 實現晶片完全分離的總的角 位移 0.099314 弧度 Split speed 加速階段後的最終速度 3.1弧度/秒 Instantaneous—move 由於伸長臂在初始時有小撓 度而對電動機位置的小校正 0.001弧度 Acel 電動機角加速度 310弧度/秒2 Decel 勻速階段結束後的電動機減 速度 108弧度/秒2 Maximum time 在未發生解理情況下的終止 時間 5秒 設置Strain Delta和Acel參數以在初始解理和主解理之間實現 12 200832505 恰當的結合。在達到Split Speed設定時，或者在Acd、Decei和200832505 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to the manufacture of substrates. More specifically, the present invention provides a technique including a bonding method using a semiconductor integrated circuit device to form a layer, a method and structure of a board structure. According to a specific embodiment, such bonding involves the use of a heat treatment to establish a bonding interface that is substantially free of other or undesirable features. In a preferred embodiment, the heat treatment is performed for 2 戸, and the interface region between the bonded pairs to be removed is transferred to a higher temperature, but it should be understood that the present invention has a broader application range. It can also be used: his type of substrate for integrated semiconductor devices, photonic devices, piezoelectric crying, yang systems ("hall (10)"), nanotechnology structure, sensing package too much of this battery, biological devices Three biotech devices and the like are used in the construction of the lower-value materials to construct the unit: or, the smaller components or the utility. The object to be separated is divided into smaller parts to enhance it such as a glass plate and a drill; 5. The semiconductor core 111 f 1 includes a substrate structure, for example, the substrate is bonded to the earth plate, the plate, and the like. Various techniques can be used to separate or separate the use of a metal cutting operation. In some cases, tools are used, and sawing operations typically rely on rotating blades or blocks. However, this kind of dryness 3, with 'cutting the substrate material', divides the substrate material into two tools and components for fine precision. It can't be used to make precision or cut especially hard. For the manufacture of micro ★ silk n diamond or glass). (4) The operation is still difficult. Therefore, the yak has included integrated circuit devices. Devices often (3) These microelectronics are "flattened" touches 200832505 is considered to be the inventor of the integrated circuit - an early "surgical control", some are included in the current equipment and Equipment. Children's & mobilization, toys, cars and various medical treatments for the first time. Number of aspects I = _ given a device on the wafer area, what structure is also 11 pieces of "several circuit density increase Big ί has only become smaller and smaller. Providing a cheaper & _ degree and performance, but also for the consumption of ί ί Hi t battle, the circuit manufacturing, the ΐ set faster and faster, the specific traditional crafts and materials will Produce workers to work in a wide area. A tradition that is often used to thin these device layers: hangs are tempered by %, and it is often reported as difficult and tends to cause the crying layer to be thin to a certain thickness. Although there have been some improvements, there are still many restrictions on this day and month. One part = day paste? The process of moving from a larger donor (d_) substrate has been used to fabricate specific substrate structures, such as or without a substrate. As an example only, F Naois j. Hen (4) and ^ an ung developed a pioneering technique to cleave material films. Such a technique is described in U.S. Patent No. 6,013,563, the disclosure of which is incorporated herein by reference. Technology has been very successful, but still a better way to manufacture multilayer structures. In summary, we can see that there is a need for a technology with good cost-effective ratio of effective 200832505 to manufacture large substrates. Key = 1 = mining time, careful control of the upper low cleavage operation of the motor ^ can be included in the rush; in the fast home = two: she is again placed around the pedestal, the second The suction part that is in contact with the younger brother. The motor applies a force to the arm. The motor is set to reduce the applied tension when the arm is cleavable by the blade. f can be used to obtain - or more of these benefits. The following is a description of these and other benefits. [Embodiment] A method and apparatus for cleaving a bonded substrate , j: Using adenine/A to the tension of the bonded substrate and initiating the local cleavage, "adding the ,, so that the overall solution is followed; the first Ϊ;, set to the suction = the end of the first end set To rotate around the pedestal, "! ^, the force is converted into a tension applied to the bonded wafer = moving 3 arm applied to apply the tension, while reducing the implementation according to the invention when using other cleavage The cleavage process of the example can be performed using the apparatus 100 of the cross-sectional view of 200832505 of Fig. 1. Specifically, the bonded wafer pair 102 is secured in place by suction cups 104 and 106. The bottom suction cup 104 is secured to the device base 1 The 〇8:g portion suction cup 106 is fastened to the extension arm 110, which is pivotally connected to the motor 111 along the z-axis. The processor 113 is arranged to control the selection of the motor ln. The unit 115 is arranged to measure the force present on the arm. As shown, a linear variable differential transmitter (LVDT) 119 is located on the base 108 with its tip in a retracted state. The LVDT 119 can be extended. To detect the vertical position of the bonded wafer pair. It is intended to be applied to the precise position of the side of the bonded wafer pair 1 〇 2 in order to initiate the cleavage process. An embodiment of the device according to the invention has the following dimensions · 40, 'Wx40" Dx94"H (178 cm Wxl52 cm Dx203 cm H The device uses the following electrical components: 208V 3φ; 20Amp; 60Hz. The device uses a stepper motor and = 25-28''Hg/8cfm/2241iter/min vacuum. The device includes an exhaust gas pressure tube ( Exhaust pressure manif〇M) to contain the exhaust gas. The system has a gas thickness of 60-100 pSi/4.: U6.9 bar. The device is set up to cleave approximately 3 〇 8"/200mm bonded wafer pairs per hour. The device uses a robotic operating system with 2 boxes of platforms (after separation, 丨 send, 2 receive) The manipulator is as^t 21 5L, the pre-aligner (pre_aligner) is a non-contact integrated system, the rules of sequence and fast-production are programmable, and the rules of the aligner angle are also programmable. Also, %^ 22 ίΓί f Calling for bribery and __. In particular, the 1 3 wafer pair 102' is in the form shown in the process of applying the substrate 102a along the bonding interface fit to the processing wafer 1G2b° to apply tension, from the elongated arm 110. Using the blade 112, the donor substrate 102ai is slid along the sipe 's in a manner desired in the art of the insulator 1) to the s thermal oxide operating wafer and the overlying semiconductor layer. A simplified curve _ After the simplified flow chart of Fig. 4 is explained, the method is applied to the wafer. Specifically, the film on the wafer is processed by the bonding process. The knives are transferred to the processing flow. The first step 402, placing the bonded wafers In device 200832505. Γΐ ί ί ί [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ This force sets fiA f = force point A. In the third step 406, once it has reached ^^5, it is a slap in the middle. In step 408, the device is low. Once the tension is reduced to the initial setting, the specified motion is generated. If the step is as follows: (for example, reduced to the degree B), the first wafer is completely removed from the program. The specification is connected to the specific example shown in Fig. 5, the elongation element reading F~30, 〇〇〇. Load unit reading F load single form: in the initial stage (t = G. 4) through the basic operating machine of the present invention Motion control or limiting the slower solution ^. 夂k+ & 'Then is followed by electric as shown above, in order to obtain a uniform cleavage phase and the full cleavage correctly combined. This can be done by the initial = motion. 6 The figure shows the angular position of g in the device with the dimensionless (AU) time. The combination of the sum of the sum and the total cleavage can be achieved by the following method: before the completion of the initial cleavage stage, that is, under the tension mode, the programmed motor movement is started: And the tension of the motor movement programmed (stra^Del=number)° is started after the completion of the motor; and the small value, so as not to adopt a sufficiently high angular acceleration (Acei number) after the initial process 2) The cleavage can be carried out very quickly in the initial phase phase "11 200832505, thus ensuring a seamless transition between the initial cleavage phase and the main cleavage phase. Thus, the roughness of the cleaved surface in the two regions can be comparable. & As mentioned above, the angular acceleration Acel (handling substrate and donor base & straight can be used to get the initial solution between the section and the continuation stage to obtain no 罝 罝 离) speed 芩 is an important input cleavage process parameters . Add , you can adjust other parameters to control the cleavage process. In the following table, 7, the number of mics, and the outline of their appearance in the software that controls the device work. This money slave is for cleavage table 1 cleavage process parameter name cleavage process parameter definition typical setting Strain is enough to stabilize the cleavage tension -5000 points Strain increments The angle increment obtained from the cleavage closed position angle increment 0.001 radians Number of pulls The cumulative increase in the angle of the angle of rotation reaches 40@Strain increment Strain delta Strain set point - the strain after the start == The set point of the programmed motor motion start 2000 points Move one after one split to achieve the total angle of the complete separation of the wafer Displacement 0.099314 radians Split speed Final speed after acceleration phase 3.1 radians/second Instantaneous-move Small adjustment of motor position due to small deflection of the extension arm at initial 0.001 radians Acel Motor angular acceleration 310 radians/sec 2 Decel After the end of the uniform phase Motor deceleration 108 radians/sec 2 Maximum time The Strain Delta and Acel parameters are set 5 seconds in the absence of cleaving to achieve the proper combination of 12 200832505 between the initial cleave and the main cleave. When the Split Speed setting is reached, or in Acd, Decei, and
Move—After—Split參數設定施加了約束的情況下達到可獲得的最 大速度時，加速過程結束。 、The Move-After-Split parameter sets the acceleration to the end when the maximum speed is reached with the constraints applied. ,
Spl^Speed *爲了使主解理過程中的解理線最小而要調整的 主要工蟄减。通常將Split Speed參數調整得足夠快，達到閑值 ’以使解理線最+。如果將Split Speed參數調整得太快，則 j了能破裂。這_邊界設定之間是使所得的解理最小而又沒 有晶片破裂危險的工藝窗口。Spl^Speed * The main work to be adjusted in order to minimize the cleavage line in the main cleavage process. The Split Speed parameter is usually adjusted fast enough to reach the idle value 'to make the cleaving line the most +. If the Split Speed parameter is adjusted too fast, then j can break. Between these boundary settings is a process window that minimizes the resulting cleavage without the risk of wafer breakage.
Deed參數使伸長臂的運動減慢，使得在M〇V r ，日^電動機會在該對完全分離的情況下停止。Deed _應當仔 因祕延長臂減慢太多會在解理的末端附近造成ΐ重的 如上圖6所示，由於電動機運動電壓是通過閉 實際運動可能不同。因此，需要將編程的運^實 示，動區刀離。PID (比例-微分—積分〕電路可以儘量 ^暫態臂的編程位置與臂的實際位置之間的差別（ferr=隨0 下面的步驟示出了電動機的程式操作順序。起初， 程式，然後關閉鰭板，並向吸盤施加真空以緊固晶片口私里 電動機通過運動一個角度增量（例如〇 〇〇1弧度）開 載單元以確定應變。如果負載單元齡的應變Ϊ j於應受點（例如·5_點）’則對此電動機編程再移動另= 冒里’然後再檢查錢。這種翻-直持續職 口 或者達，11C隱t (電動機步進PullI_me=4T疋點， _接著’ LVDT運動直離觸“的底部並縮回。-日達到？^ 應變設定點（例如-5_點)，則觸發刀片的啓動。這力 疋Τ〇之後〜0.35秒。將刀片用於介面會啓動解理處理。s可从 當應變計表明力已經減小了預定點數（strain Wind〇w 2_點的改變，或_8_，點）），則啓動被編程 ，式（0—1)。向電動機發送信號，以到達預定的 =The Deed parameter slows the movement of the elongate arm so that at M〇V r , the motor will stop with the pair completely separated. Deed _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Therefore, it is necessary to program the operation and the motion area. The PID (proportional-derivative-integration) circuit can try to make the difference between the programmed position of the transient arm and the actual position of the arm (ferr = with 0. The following steps show the sequence of the program operation of the motor. Initially, the program is then closed. Fins, and apply a vacuum to the suction cup to fasten the wafer. The motor is opened by moving the angle unit (for example, 〇〇〇1 radians) to determine the strain. If the strain Ϊ j of the load unit is at the point of acceptance ( For example, ·5_点)', then the motor is programmed to move another = 冒里' and then check the money. This turn-to-continuous job or up, 11C hidden t (motor stepping PullI_me=4T疋, _ then 'The LVDT moves straight away from the bottom of the touch and retracts. - The day reaches ?^ The strain set point (eg -5_ point) triggers the start of the blade. After this force ~0.35 seconds. Use the blade for the interface The cleavage process will be initiated. s can be programmed from the strain gauge when the force has been reduced by a predetermined number of points (strain Wind〇w 2_point change, or _8_, point)) Send a signal to the motor to reach the predetermined =
Unstantan漏—Μ請或Boost參數，例如_弧度）。g 13 200832505 點’ ίΡ不考慮任何加速度設定。這防止了編碼 ;長?;=:回以校正晶片初始過程張力突然鬆噴 .1V 1 , ,，. 一 — γ 7包初微μ現定的力口速度 (s^t—acel ’例如400孤度/秒2)前進到m〇ve after s帅位置（例 5 0^)99314弧度），並會在到達該角位置的同時儘量達到規定』恒 ^^722^秒）°2經編程的運動已經包括或排除了 ?r而由不义被产的設定點是相對角 電動機如果首先達到贿，就 的經編程Ϊ運動情見二咸t〇7-after-spIit和sPUt—acel #2) (Decel J 140 it m電動細見定的加速度 秒2) P妳湓令V :去^丨U、r ecel，例如140弧度/ 同。、、二&了達到勻速所需的時間t2。實際運動可能會大大不 , Strain Pull Ld tiT； ? ^ (例如對她_ 咖對t )stom-wmd〇w更大 根據本發明—種實施儀解理處理的各個方 ΐΐΠί °例如’解理工藝條件依賴於解理面的有效S能'。 理中的變化主要是通過對初二力;^件t鍵合處理而改變。解 節的。 疋、、咖始張力（Strain解理參數）_整來調 各種方=種ff例執行了解理處理，就可以通過 ΐ:ΐ: ””眼檢查。然後將觀察結果記錄』查I: I 纖維空洞方面的檢查。下面的表2概括=曰It面巧秒缺陷和 -—~__ Λ 2 專案 定義 討論 14 200832505 空洞 亮光下或光學顯微鏡下 可檢測SOI區域中的圓 形缺陷。 空洞是解理處理過程中最常産生的，其中來自 空洞的SOI材料保留在操作表面上。空洞也可 以在解理後的熱處理之後出現。 LPD 光點缺陷：亮光檢測下突 出的或通過SPI檢測到 的小缺陷。 LPD是孤立的特徵，例如晶片表面内或表面上 的顆粒、空洞或凹點，它使得散射的光強度與 周圍晶片表面相比增大。 撕裂 解理時被撕裂的SiGe層 或Si覆蓋層區域，造成 色彩改變。 撕裂在漫射光（螢光）照明、亮光或光學顯微 鏡情況下可見。 剝 離 (De-bond) 施體一處理健合失效 剝離通常發生在晶片邊緣處看不到SOI材料 的地方。對於裸操作工藝（bare handle process)，剝離是矽操作基板與施體基板氧化 物的分離。 一 氧化物轉移 解理後頂部SOI層的去 除區域暴露出氧化埋層 (BOX)。看到的色彩是 BOX的色彩，表明了其 厚度。 乳化物轉移可以發生在晶片的任何區域，但通 常在邊緣處開始。氧化物轉移伴隨在解理處理 <亍爲之後。乳化物轉移可以彳艮小，也可以擴展 很大。術語“氧化物轉移，，名稱不當。除去的是 秒覆盖物（SOI) ’不是氧化物。 解理標記 解理面的急劇改變，在亮 光、Accumap膜厚圖和光 學顯微鏡下可見。解理標 記看上去類似於刮痕，但 是彎曲的。 ~—---- 某些解理標記在頂部SOI層的表面粗糙處限 定了急劇改變，可以觀察到霧狀。解理標記是 解理方法的産物。通常通過解理後清潔或外延 光潔化來除去解理標記。 "1 邊緣刮痕 CI刀片或CCP刀片在邊 痕 邊緣刮痕在漫射光（螢光）照明、亮光或光學 顯微鏡下可見。 ---- 霧狀 特定的亮光條件下可見 的雲霧狀或變色 ---—__ 霧狀在特定的亮光條件、自動表面掃描器和光 學顯微鏡下可見。霧狀由表面微小粗糙物或表 面密集的集中物或靠近表面的瑕疵引起的非 局部光散射造成。 顆粒 '. 表面 顆粒可以通過漫射光（螢央Λ昭昍、夸 j-----—a ^ y /4 儿 、开』 15 200832505 層中的點缺陷 學顯微鏡或自動表面掃描器檢測到。其存在可 以由自動表面掃描器量化爲LPD。 凹點 矽表面的淺凹陷 在亮光下觀察時，凹點作爲可以單獨區分離的 不可去除表面出現。過多的凹點會以霧狀的形 式出現。 晶片錯開 接合時施體晶片和處理 晶片錯開 被分類成“錯開”的晶片將被拋棄 滑移 滑移線是由原子沿晶體 學平面移動造成的線性 缺陷，與晶片切口/平面 垂直或平行，並沿著晶片 的晶向。 滑移在漫射光（螢光）照明、亮光、光學顯微 鏡或自動表面掃描器下可見。滑移線可能産生 於晶片邊緣上或遠離晶片邊緣。 隨機綿延的表面缺陷 條紋可以由LPD或凹點組成。 由偏離晶體中原子的正 層積缺陷Unstantan leaks - Μ or Boost parameters, such as _ radians. g 13 200832505 Points' ίΡ does not consider any acceleration settings. This prevents the encoding; long?; =: back to correct the initial process tension of the wafer suddenly loosely sprayed. 1V 1 , ,,. - γ 7 package initial micro μ current force velocity (s^t-acel 'such as 400 Lone degree / second 2) Advance to m〇ve after s handsome position (example 5 0^) 99314 radians), and will reach the specified position as long as the angle is reached 』 恒 ^ ^ 722 ^ sec) ° 2 programmed The movement has included or ruled out the r and the set point of the unfair production is the relative angle. If the motor first reaches the bribe, then the programmed Ϊ movement sees the salty t〇7-after-spIit and sPUt-acel #2) (Decel J 140 it m motorized acceleration seconds 2) P妳湓 Let V: go to ^丨U, r ecel, for example 140 radians / same. , , 2 & the time t2 required to reach a constant speed. The actual movement may be greatly different, Strain Pull Ld tiT; ? ^ (for example, her _ coffee to t) stom-wmd 〇 w is larger according to the present invention - the various methods of cleavage processing of the implement ί ° such as 'cleavage process The condition depends on the effective S energy of the cleavage plane'. The change in the theory is mainly changed by the first two forces; Untied.疋,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Then record the observations to check the I: I fiber cavity inspection. Table 2 below summarizes the defects of the IIt face and the -~~__ Λ 2 Project Definition Discussion 14 200832505 Voids Round defects in the SOI area can be detected under bright light or under an optical microscope. Cavities are most often produced during cleavage processes where SOI material from voids remains on the operating surface. Cavities can also appear after the cleavage heat treatment. LPD spot defect: A small defect that is highlighted by bright light detection or detected by SPI. LPDs are isolated features, such as particles, voids, or pits in or on the surface of the wafer that increase the intensity of the scattered light as compared to the surrounding wafer surface. The area of the SiGe layer or Si covering layer that is torn during cleavage causes a color change. The tear is visible in the case of diffuse (fluorescent) illumination, light or optical microscopy. De-bonding Body-to-Handling Failures Stripping typically occurs where SOI material is not visible at the edge of the wafer. For the bare handle process, the peeling is the separation of the handle substrate from the donor substrate oxide. Oxide Transfer The etched area of the top SOI layer after cleavage exposes the buried oxide layer (BOX). The color seen is the color of the BOX, indicating its thickness. Emulsion transfer can occur anywhere in the wafer, but usually begins at the edge. The oxide transfer is accompanied by a cleavage treatment < The transfer of the emulsion can be small or large. The term "oxide transfer, improperly named. The second cover removed (SOI) is not an oxide. A sharp change in the cleavage surface of the cleavage mark, visible under bright light, Accumap film thickness and optical microscopy. Cleavage mark It looks like a scratch, but curved. ~—---- Some cleavage marks define a sharp change in the surface roughness of the top SOI layer, and a haze can be observed. The cleavage mark is the product of the cleavage method. The cleavage mark is usually removed by cleavage cleaning or epitaxial smearing. "1 Edge Scratch The CI blade or CCP blade is visible at the edges of the edge marks under diffuse (fluorescent) illumination, bright light or an optical microscope. ---- Cloud-like or discolored visible under specific bright light conditions----__ The fog is visible under specific bright conditions, automatic surface scanners and optical microscopes. The fog is densely surfaced or densely surfaced. The concentration of matter or the non-local light scattering caused by the 靠近 near the surface. Particles'. The surface particles can pass through the diffused light (Firefly Λ 昍 昍, boast j------a ^ y / 4, 15 200832505 A point defect microscope or an automatic surface scanner detected in the layer. Its presence can be quantified as LPD by an automatic surface scanner. The shallow depression of the surface of the pit is observed under bright light, and the pit is separated as a separate area. The non-removable surface appears. Excessive pits will appear in the form of a mist. When the wafer is staggered, the donor wafer and the processed wafer are staggered and the wafers that are classified as "staggered" will be discarded. The slip-slip line is atomized along the crystal. The linear defect caused by the plane movement is perpendicular or parallel to the wafer slit/plane and along the crystal orientation of the wafer. Slip is visible under diffuse (fluorescent) illumination, bright light, optical microscope or automatic surface scanner. Lines may be generated on or away from the edge of the wafer. Randomly stretched surface defect strips may consist of LPD or pits. Deviation from positive layers of atoms in the crystal
到痕 層積缺陷在顯微鏡檢查下可見。 常堆疊順序造成的二維 缺陷。可以存在於塊狀晶 體中，在外延沈積期間生 長或在氧化過程中發展。 晶片表面的確立面下方 具有可見長度的淺槽或 切口To the layered defects are visible under microscopy. Two-dimensional defects caused by stacking order. It may be present in the bulk crystal, grow during epitaxial deposition or develop during oxidation. a shallow groove or slit with a visible length below the surface of the wafer surface
邊緣晶片 從晶片邊緣除去的小 積材料 徽觀.刮痕對於漫射光照明(螢光）下肉眼是不 可見的，但對亮光照明下的無輔助人眼是可見 的。皇Μϋ對於漫射光照明（螢光）下的無 輔助人眼是可見的。_ 從塊狀晶片邊緣或soi層除去並轉移到晶片 表面的小面積材料，在漫射光（螢光）照明、 另 ——-_丨儿兀兀予顯倣續:¾目勳表面掃可导丨。 示出根於用f子力顯微鏡（AFM)檢測晶片。圖7八是 果。料j本ί月一種實施例解理的基板的原子力顯微粗糙度社 埃。圖3 Λ理的晶片表面，麗表面粗糖度通常爲30^0 斷面分析疋根據本發明一種實施例解理的基_原子力顯微 16 200832505 按用ΐϋ文已經對具體實施例進行了完整的說明，但是也可以 =夕種錢、可義結構以及等價物 ：ί 2f ?：' wt；：.：：;,% 據具，施情況，可《將某些步驟合併和 當 ^:’根據另外的實施例，可以將^ 他=許形成另外劑量和/或解理特性的解理面 …、，了以有其他變更、改動和替換形式。因此，上 不μ理解鱗由所㈣請專繼圍限定的本發明範圍的限制^、 【圖式簡單說明】 化剖=是示出根據本發姻於進行解理的設備—種實施例的簡 ，2$示出解理處理的啓動和解理的傳播的示意圖。 時間了對於根據本發明的解理處理的—種實施例，力隨 的簡ϋίί⑽眺本發明的—種實侧的解理處财各個步驟 ί出nl在實際解理處理過程中，來1圖1中設備的負載 早7° 0〇aiCdl)的點數隨時間的關係。 位置中設備的電動機的實際角位置和被編程的角 微粗^^出根據本發明一種實施例解理的基板的原子力顯 微截^分析^示出根據本發明一種實施例解理的基板的原子力顯 17 200832505 【主要元件符號說明】 100設備 102鍵合晶片對 102a施體基板 102b處理晶片 104、106 吸盤 108基座 110臂 111電動機 112刀片 113處理器 115負載單元 119線性可變差動變送器 130鍵合介面 132解理面 400流程 402〜410步驟 18Edge wafers A small amount of material removed from the edge of the wafer. The scratches are invisible to the naked eye under diffuse illumination (fluorescent), but are visible to unassisted human eyes under bright illumination. Huangfu is visible to the unsupported human eye under diffuse lighting (fluorescent). _ A small area of material removed from the edge of the bulk wafer or the soi layer and transferred to the surface of the wafer, in diffused light (fluorescent) illumination, and another - _ 丨 兀兀 显 显 : : : : : : 3 3 3 3 3 3 Hey. It is shown that the wafer is detected by a force microscope (AFM). Figure 7 is the result. The atomic force micro-roughness of a substrate cleaved by an embodiment is described. Figure 3: The surface of the wafer to be treated, the surface roughness is usually 30^0. The analysis of the surface according to an embodiment of the invention. The atomic force microscopy 16 200832505 has been completed for the specific examples. Explain, but can also = eve money, synonymous structure and equivalent: ί 2f ?: ' wt;:.::;,% According to the situation, the situation can be combined with some steps and when ^: 'according to For example, it is possible to form a cleavage surface of additional dosage and/or cleavage properties, in other variations, modifications, and alternatives. Therefore, the upper limit is not limited to the scope of the invention defined by (4), and the limitation of the scope of the invention defined by the following is a description of the apparatus according to the present invention. Jane, 2$ shows a schematic diagram of the initiation of cleavage processing and the propagation of cleavage. For the embodiment of the cleavage process according to the present invention, the force is simplistic ίί (10) 眺 the real side of the cleavage of the present invention, each step ί out nl in the actual cleavage process, to 1 The load of the device in 1 is 7° 0〇aiCdl). The actual angular position of the motor of the device in position and the programmed angle are slightly coarser. Atomic force microscopy analysis of the substrate cleaved in accordance with an embodiment of the present invention ^ shows a substrate cleaved in accordance with an embodiment of the present invention Atomic force display 17 200832505 [Main component symbol description] 100 device 102 bonding wafer pair 102a donor substrate 102b processing wafer 104, 106 suction pad 108 pedestal 110 arm 111 motor 112 blade 113 processor 115 load unit 119 linear variable differential Transmitter 130 bonding interface 132 cleavage plane 400 flow 402~410 step 18