TW200811916A - Cluster tool for advanced front-end processing - Google Patents

Abstract

Aspects of the invention generally provide an apparatus and method for processing substrates using a multi-chamber processing system that is adapted to process substrates and analyze the results of the processes performed on the substrate. In one aspect of the invention, one or more analysis steps and/or precleaning steps are utilized to reduce the effect of queue time on device yield. In one aspect of the invention, a system controller and the one or more analysis chambers are utilized to monitor and control a process chamber recipe and/or a process sequence to reduce substrate scrap due to defects in the formed device and device performance variability issues. Embodiments of the present invention also generally provide methods and a system for repeatably and reliably forming semiconductor devices used in a variety of applications.

Description

200811916 IX. Description of the Invention: [Technical Field] The present invention generally relates to an integrated process system configured to execute a process program, comprising a substrate processing module, a substrate preparation chamber, and / or process validation and analysis chambers. [Prior Art]

The process of forming a semiconductor component is typically accomplished in a multi-chamber process system, such as a cluster tool, which has the ability to process substrates (e.g., semiconductor wafers) under a controlled process environment. A typical controlled process environment includes a system having a main structure for housing a substrate transfer robot in a load lock chamber and a plurality of vacuum processing chambers coupled to the main structure The substrate is transferred between the chambers. The controlled process environment has a number of benefits, including minimizing contamination of the substrate surface during transport and during various substrate processing steps. Therefore, performing a process in a controlled environment reduces the number of defects generated and improves component yield. The substrate production process is usually evaluated by two related and important factors. Efficiency' is the component yield and cost of ownership (c 〇 〇). These factors are important because they directly affect the cost of manufacturing electronic components and thus the component manufacturers' competitiveness in the market. Although affected by many factors, C〇〇 is primarily affected by the yield of the components formed during the component process, as well as the substrate yield, or simply the number of substrates processed per hour. A process program is typically defined as a program of component fabrication steps or recipe recipe steps that are completed within one or more processing chambers in a cluster device. A process program typically contains 5 200811916 many substrate (or wafer) manufacturing process steps. The industry continues to move toward shrinking the size of semiconductor components to improve component processing and reduce component heating, leading to a reduction in process variation in the industry.尺寸 Due to the shrinking size of semiconductor components and the ever-increasing requirements for component performance, the amount of variation that can be tolerated for component manufacturing process reproducibility and reproducibility is greatly reduced. A factor affecting component performance is one of the factors of "waiting time". The waiting time is generally defined as the substrate may be exposed to the environment or other contaminants after the first process has been completed on the substrate and the second process is completed on the substrate to avoid certain adverse effects affecting the performance of the fabricated device. Between the next. The time that the right substrate is exposed to the environment or other sources of contamination is close to or exceeds the allowable waiting time, and component performance may be affected by contaminants between the first and second; I faces. Therefore, for process procedures involving exposure of the substrate to other sources of contamination, it is necessary to control the time at which the substrate is exposed to some of the sources of contamination or to minimize the time to avoid component variations. Therefore, the useful electronic component manufacturing process must be consistent and reproduce the process results, minimize the effects of contamination, and also meet the /productivity requirements for consideration in substrate processing procedures. Semiconductor 7-piece manufacturers spend a lot of time trying to reduce the Co〇 problem caused by improper substrate, component defects, or unstable substrate properties. Often, improper handling of substrates, lack of components, and/or unstable component performance are due to process variations in one process or multiple processes, contamination in the system or processing chamber, or film layers in the substrate. The initial conditions are different. The layer used to ensure the speed of the production is required to pass through the layer. The foundation of the energy can be pre-empted. 6 200811916

Conventional methods that fall within the expected range of processes typically employ one or more off-line analysis techniques. Off-line testing and analysis techniques require periodic or frequent removal of one or more substrates from the process and process environment and then sent to the test environment. Therefore, the production process is actually interrupted during the transfer and inspection of the substrate. As a result, conventional measurement viewing methods can greatly increase the overhead time for manufacturing wafers. In addition, because of the negative impact on yield, such inspection methods are only periodic sampling, and many contaminated substrates will Defective components are manufactured without further inspection. If it is difficult to trace the source of contamination because a particular batch of substrate is redistributed, the problem becomes more complicated. Therefore, an integrated measurement and process inspection system is needed that can examine important components of the selected substrate. Characteristics, including film stress, film composition, particulates, process defects, etc., are then adjusted during processing to correct the problem' to avoid occurring on the substrate that is subsequently processed. Preferably, such inspection can be performed before, during or after the substrate processing, so that the pre- and post-treatment conditions of the substrate can be determined on the fly. Accordingly, there is a need for a system, method, and apparatus that can process a substrate to meet the desired component performance goals and increase system yield, thereby reducing process cost of ownership. SUMMARY OF THE INVENTION The present invention generally provides a substrate processing apparatus including one or more side walls, a first support chamber, and a substrate processing chamber, wherein the side walls form a transfer region, and A mechanical arm configuration is disposed in the transmission area; the first support chamber is disposed in the transmission area and is adapted to be 7

200811916 measures the characteristics of the surface of the substrate and the substrate processing chamber is in communication with the region. Several embodiments of the present invention further provide a substrate processing apparatus including one or more side walls, one or more substrate processing chambers, a chamber, a substrate processing chamber, and a pre-cleaning chamber. Wherein the one or sidewall forms a transport region, wherein the transport region is provided with a robot, the one or more substrate processing chambers are communicable with the transport region; the branch communicates with the robot arm, and the support chamber Suitable for measuring characteristics of one of the regions; the substrate processing chamber is in communication with the transfer region and the pre-cleaning chamber is configured to prepare a surface of the substrate prior to performing a process in the substrate processing chamber . Embodiments of the present invention further provide a method for forming a half element in a cluster device, the method comprising: forming a component feature on a surface of a substrate in a substrate chamber by using a component forming process, and supporting a substrate to a cavity Indoor and measuring the characteristics of a region on the surface of the substrate, compared to the measured characteristics and values stored in a system controller, and the characteristics of the base test and the values stored in the controller of the system are compared to the forming process Adjust a process parameter during the period. Embodiments of the present invention further provide a method of forming a half component in a cluster device, the method comprising forming a component feature on a substrate surface in a nucleation chamber by using a component forming process, using a configuration cluster device to transmit a region The inner robot arm places a substrate in the domain to 'measure the characteristics of the surface of the substrate in the transmission area, the measured characteristics and the values stored in a system controller, and the base transmission a plurality of arms of the cavity; holding the cavity substrate, and the step-conducting material is disposed in the wheel controller of the component in the wheel zone, and is stored in the controller of the system. A comparison of the values is used to adjust a process parameter during the component formation process. [Embodiment]

The present invention generally provides an apparatus and method for treating a substrate using a multi-chamber processing system (e.g., a clustering apparatus) that is suitable for processing a substrate and analyzing the results of performing the process on the substrate. In one aspect of the invention, one or more analysis steps and/or pre-cleaning steps are used to reduce the effect of waiting time on component yield. In one aspect of the invention, a system controller and one or more analysis chambers are used to monitor and control processing chamber recipes and/or process procedures to reduce substrate scrap and components due to defects in formed components. Performance change issues. Embodiments of the present invention also generally provide several methods and systems that are reproducible and can form semiconductor components for use in a variety of applications. The invention is exemplified by reference to a Centura apparatus available from the FEP Division of Applied Materials, Santa Clara, California, USA. Embodiments of the invention may be advantageously utilized in a cluster device configuration capable of processing substrates in a plurality of single substrate processing chambers and/or multiple batch type processing chambers. A cluster device is a modular system that includes multiple chambers that can perform various processing steps for forming electronic components. As shown in FIG. 1, the cluster device 1A includes a plurality of processing locations 114A-114F in which a plurality of processing chambers (not shown) can be configurably coupled to a central transfer chamber. The central transfer chamber 110 houses a robotic arm 113 adapted to transport substrates between the processing chambers. The inner region of the transfer chamber 110 (e.g., transfer region 110C of Fig. 8) is typically maintained in a vacuum and provides an intermediate region in which the substrate is transferred from one chamber to another in the intermediate region of 9200811916. a chamber and/or a load lock chamber disposed at the front end of the cluster device. This vacuum condition is typically achieved using one or more vacuum pumps (not shown), such as conventional rough pumps, blowers, conventional turbo pumps, conventional frozen pumps (〇卩〇-011111?) or a combination thereof. Alternatively, the interior region of the transfer chamber 11() may be an inert environment maintained at or near atmospheric pressure by continuously delivering an inert gas to the interior region. Figure 1 is a plan view of a typical cluster device that can be used in electronic component processing, which can benefit from the present invention. Two such platforms, the Centura, Endura, and Producer systems, are all available from Applied Materials, Inc., Santa Clara, California. The details of such a segmented vacuum substrate processing system are disclosed in U.S. Patent No. 5,186,718, issued to the U.S. Pat. This document is incorporated herein by reference. The actual configuration and combination of chambers can vary depending on the particular steps of the production process being performed. Figure 2 shows an embodiment of a clustering apparatus in which substrate processing chambers 201, 202, 203 and 204 are respectively disposed in positions 114A, 114B, 114C, and 114D of the transfer chamber 11''. In accordance with aspects of the present invention, the cluster device 1A typically includes a plurality of chambers and robotic arms, and is preferably provided with a system controller 102 that is programmed to be controlled within the cluster device 100 and Perform various process methods and procedures. A plurality of slit valves (not shown) may be added to the transfer chamber 110 to selectively isolate each of the processing chambers mounted at locations 114A-F so that each chamber may be independently evacuated for processing The vacuum process is performed during the program. 10 200811916 In some embodiments of the invention, not all of the locations i4a-F are provided with processing chambers to reduce the cost or complexity of the system. In one aspect of the invention, one or more substrate processing chambers 201-204 may be conventional epitaxial (EPI) i-product chambers that may be used to substrate during one or more steps of the substrate processing procedure An epitaxial layer containing one or more materials, such as germanium (Si), germanium telluride (SiGe), and sic. The EPH process can be performed using the AppHd Centure EPI chamber from Applied Materials, Inc. of Santa Clara, California. In one aspect of the invention, the one or more substrate processing chambers 201-204 can be RTp chambers for annealing the substrate during one or more steps of the substrate processing procedure. The RTp process can be performed using an RTp chamber (eg, Vantage RadOx RTP, Vantage Radiance Plus RTP) purchased from Applied Materials, Inc., Santa Clara, Calif., and related process hardware. In another aspect of the invention, the one or more substrate processing chambers 201-2 04 may be conventional chemical vapor deposition (CVD) chambers suitable for depositing metals (eg, titanium, steel, tantalum). , a semiconductor (for example, germanium, germanium, germanium, germanium) or a dielectric layer (for example, Bl〇kTM, cerium oxide, cerium nitride, oxidized (HfOx), nitrogen carbide fossil). Examples of such CVD processing chambers include DXZTM chambers available from Applied Materials, Inc. of Santa Clara, California.

Ultima HDP-CVDTM chamber and PRECISION 5000® chamber. In another aspect of the invention, the one or more substrate processing chambers 201-204 can be conventional physical vapor deposition (PVD) chambers. Examples of such pvd processing chambers include EnduraTM PVD processing chambers available from Applied Materials, Inc. of Santa Clara, Calif. In another aspect of the invention, one or more substrate processing chambers

200811916 201-204 may be a split-coupled plasma nitriding (DpN) chamber.

Examples of such DPN chambers include the CenturaTM DPN chamber available from the company of Santa Clara, California. An example of a processing chamber that can be used to perform a split-coupled electric paddle system is described in the U.S. Patent Application Serial No. US Patent No. US 20040242021, the entire disclosure of which is incorporated herein by reference. This document is incorporated herein by reference in its entirety by reference. In another aspect of the invention, the one or more of the base processing chambers 201-204 can be metal etched or dielectric etched chambers. Examples of such metal and dielectric etch chambers include the CenturaTM eMAX chamber from the CenturaTM AdvantEdge metal residual chamber available from Materials Materials, Inc. of Santa Clara, California. Referring to FIG. 2 and as described above, the processing chambers 201-204 mounted on one of the positions il4A_D can perform various processes such as Pvd CVD (eg, dielectric CVD, MCVD, MOCVD, EPI), AlD, coupled Plasma nitridation (DPN), rapid thermal annealing (RTP) or dry etch processes form various component features on the surface of the substrate. Various component features can include, but are not limited to, an interlayer dielectric layer, a gate dielectric layer, a polysilicon gate forming vias and trenches, a planarization step, and a deposition contact pad or via interconnect. In one embodiment, position 1 14E-114F contains service chambers 116A-B suitable for performing degassing, positioning, and cooling operations. In one embodiment, the processing process is adapted to form a high dielectric constant capacitance structure, wherein the processing chamber 201_2 04 may be a DPN chamber, a polycrystalline CVD chamber, and/or capable of depositing tantalum, tungsten,钽, Ming or in the MCVD chamber. In another embodiment, the processing process is adapted to form a gate, and the stacking and stacking is performed in a stack of electrodes 12 200811916, wherein the processing chambers 201-204 may be DPN chambers. A chamber, a CVD chamber capable of depositing a dielectric material, a CVD chamber capable of depositing polysilicon, an RTP chamber, and/or an MCVD chamber.

Referring to Fig. 2, an optional front end environment 104 (also referred to herein as a factory interface or FI) is provided to selectively communicate a pair of load lock chambers 106. The factory interface robots 108A-B disposed within the transmission area 104B of the front end environment 104 are capable of linear, rotational, and vertical movement for the load lock chambers 106 and a plurality of wafer cassettes mounted on the front end environment 104. 1 〇 5 transfer substrates. The front end environment 104 is generally used to transfer substrates from a wafer cassette (not shown) located in a plurality of wafer cassettes 105 to a desired location through a constant pressure cleaning environment/enclosure, such as Processing chamber. The clean environment in the transfer area 10 4B of the front end environment 1 4 is typically provided by an air filtration process such as passing air through a high efficiency particulate air (HEPA) filter. The End Environment, or Front End, is available from Applied Materials, Inc. of Santa Clara, California. A robotic arm 113 is disposed in the center of the transfer chamber 110 to transfer substrates from the load lock chamber 106A or 106B to one of the various processing chambers disposed at locations 114A-F. The robotic arm 113 typically includes a blade assembly 113A and an arm assembly 11 3B that is coupled to the robotic arm drive assembly 11 3 C. The robotic arm 113 is adapted to transfer the substrate "W" to the various processing chambers in accordance with instructions from the system controller 102. A robotic arm assembly that would benefit from the application of the present invention is described in U.S. Patent No. 5,469,035, entitled "Two-Axis Magnetic Coupling Manipulator", filed on August 30, 1994, and assigned to U.S. Patent No. 5,447,409, filed on No The documents are hereby incorporated by reference in their entirety by reference. The load lock chambers 106 (e.g., load lock chambers 106A and 〇6Β) provide a first vacuum interface between the front end environment 104 and the transfer chamber 110. In one embodiment, two load lock chambers 106A and 106B are provided to increase throughput by alternately communicating the transfer chamber 110 and the front end environment 104. Thus, when a load lock chamber is in communication with the transfer chamber ι1, the second load lock chamber 106 is in communication with the front end environment 104. In one embodiment, the load lock chamber i 〇 6 is a batch type load lock chamber that can receive two or more substrates from the interface and retain the substrates when the chamber is sealed. The substrates are then transferred to the transfer chamber 110 when evacuated to a sufficiently low vacuum level. Preferably, the batch negative locking chamber can hold between 25 and 50 substrates simultaneously. The system controller 102 is typically designed to facilitate control and automation of the overall system and typically includes a central processing unit (CP1J) (not shown), memory (not shown), and support circuitry (or 1/〇). (not shown). The CPU can be used to control various system functions, chamber processes, and support hardware (such as detectors, robot arms, motors, gas source hardware, etc.) in industrial settings, and to monitor the system and chamber process ( Any type of computer processor such as chamber temperature, process program yield, chamber process time, 1/〇 signal, etc. The memory is coupled to the CPU and can be one or more readily available memories such as random access memory (RAM), read only memory 14 200811916 (ROM), floppy disk, hard drive or any other type. Remote or in situ digital storage device. Software instructions and materials can be encoded and stored in memory to command the cpu. The support circuits are also connected to the CPU to support the processor using conventional methods. Such support circuits may include caches, power supplies, clock circuits, input/output circuits, subsystems, and the like. The program (or computer command) that can be read by the system controller 102 determines what operation is to be performed on the substrate. Preferably, the program is a software that can be accessed by the system controller 1 〇 2, which includes code to perform several operations related to monitoring, controlling, and executing the processing procedures and various chamber recipe recipe steps. The configuration of the chamber, in one embodiment 'the cluster device 1 〇〇 contains the system controller 102, = several substrate processing chambers 2〇1_2〇4 and one or more support chambers, generally 3' The support chamber can be a measurement chamber, a pretreatment chamber, and a post processing chamber. For a number of reasons, including but not limited to, in order to improve component yield, improve process reproducibility on each substrate, Z process results, and reduce the effect of waiting time differences between substrates, etc. The reason is to add a support chamber to the cluster device 1〇〇. In the aspect shown in Fig. 2, two support chambers 211 are mounted at positions 214 or 214 of the transfer chamber. The unused space in the transfer chamber 110 is filled with one or more 4q «I 1 ports - to u, and the number I is reduced by the additional hardware required to be added to the support chamber components. The clustering equipment processes the extra time required to transport the substrate between the chamber and the support chamber 211, 15119119, and reduces the footprint of the cluster device, thereby helping to reduce the cost and stability of the system.

Figure 3 shows another configuration of the cluster device, wherein the support chambers 211 are not placed in other areas of the cluster device 1 , such as at location U4E and/or with the front end environment 1〇4 Linked to position 214C or 214D. It should be noted that the support chamber 2 U can be expected to be mounted at one or more locations 114 Α 114 Ρ, location 214 A _ D, or any other known location accessible by one or more cluster device automation controls. Figures 4 and 5 illustrate an example of a process routine executed within a representative cluster device configuration that includes a support chamber 211. Figure 4 shows the movement of the substrate "W" through the cluster device as the process steps described in Figure 5 are performed. Each of the arrows A1 to A8 in Fig. 4 shows the movement or transmission path of the coffin within the cluster device 100. In this configuration, the substrate is removed from the wafer cassette set at position 1 0 5 A and transferred to load lock chamber 106A along transport path A1. The system controller 102 then instructs the load lock chamber 106A to close and vent to an expected low pressure so that the substrate can be transported into the transfer chamber 110 that is already in a vacuum evacuated state. Next, the substrate is conveyed along path A2 where the preparation/analysis step 312 is performed on the substrate. The preparation/analysis step 3〇2 may comprise one or more preparatory steps' including, but not limited to, substrate inspection/analysis and/or particle removal. After the preparation/analysis step 322 is completed, then as shown in FIG. 4, the substrate is transported along the transport path A3 to the processing chamber on the position ,4Α, in which the substrate process is performed on the substrate. Step 304. After performing the substrate processing step 304, the substrates are successively transferred to the substrate 16 200811916 processing chambers 202 and 203 along the transport path α4_α5, where their respective substrate processing steps 306 to 308 are performed, as in the fourth And as shown in Figure 5. In another embodiment, substrate processing step 307 is a pre-cleaning process step (discussed below). In an embodiment, the substrate processing steps 306 and 308 can be selected from the group consisting of oxide etching, metal etching, EPi, RTP, DPN, PVD, CVD (eg, CVD polysilicon, teos, etc.) or Other suitable substrate processing steps. The substrate is then transported along path A6 where a subsequent post-treatment/analysis step 310 is performed on the substrate. The post-treatment/analysis step 310 can include one or more preparatory steps including, but not limited to, substrate inspection/analysis and/or particle removal steps. After the post-processing/analysis step 31 is completed, the transport path A7 is followed to transport the substrate to the load lock chamber 1 〇 6a. The load lock chamber is then vacuumed and the substrate is removed from the load lock chamber along transport path A8 and placed in wafer cassette position 105A. Other embodiments of the process program may also include a solution for placing the support chamber 1 between at least one other process step of the shoe sequence. In another example, only one process step is completed on the substrate after the preparation/analysis step 320 or the post-treatment/analysis step 3 1 0. Removing the Support Chamber In one embodiment, the support chamber 2 11 is configured to reduce the amount of particles on the substrate sheet during the preparation/knife separation step 302 and/or the post-treatment/analysis step 3丨〇 or The amount of contamination, therefore, can improve the component yield and substrate rejection rate of the components to be processed, the components to be processed. Typically, the particulate/contamination chamber, referred to herein as a particulate reduction chamber, exposes one or more substrate surfaces 17 200811916 to particulates and other contaminants on ultraviolet (uv) radiation, 4 for μ energy. The surface of the substrate is such that it leaves the surface of the substrate by, for example, Brownian motion, modifying the contaminant for the exposed enthalpy, such as a change in bonding, bonding properties, or causing contaminants I &妒& + people κ ) 卞 w..., praise, etc. When the surface is known to reduce the radiation source from the particle/pollution chamber, between about 5 to about 25 watts/cm 2 (mWatts/cm 2 ) The energy density is as well as the wavelength of between about 120 and about 430 nanometers (nm) to transfer the UV radiance, a ', or a UV light to the surface of the substrate. Come

Radiation from the source of radiation may be supplied by a lamp containing elements such as gas, argon, helium, nitrogen, gasification pores, chaotic argon, argon fluoride, etc., using a source of radiation that emits ultraviolet light to remove or reduce the surface of the substrate. The impact of organic pollution on the surface is particularly acute. A typical source of radiation suitable for emitting UV wavelengths may be known as UV lamps (eg, mercury vapor lamps) or other similar devices. Combinations of several sources of radiation from different wavelengths (four) of light can also be used. Figure 6 shows a cross-sectional side view of a support chamber 2丨丨, which is a microparticle reduction chamber 700 for exposing one or more substrate surfaces to ultraviolet (UV) radiation. The particle reduction chamber 700 can be mounted at any available location within the cluster device, such as location 114A_U4F (Fig. 2) or location 214A-214E (Fig. 3). Generally, the particle reduction chamber 700 includes a seal 701, a source of radiation 711, and a substrate support 704. The enclosure 701 typically includes a chamber body 702, a chamber cover 703, and a transparent region 705. In one aspect, the enclosure 701 includes one or more seals 706 for sealing the treatment zone 710, such that the enclosure 706 can be evacuated to a vacuum condition during the processing process using the vacuum pump 736. In one aspect, the processing zone 71 is evacuated using a true 18 200811916 air pump 736 and a gas delivery source 735 and maintained at a pressure of between about ι 〇 $ Torr to about 700 Torr. In an embodiment, by continuously delivering an inert gas from the gas delivery source 735 to the processing zone 710, the zone 710 is maintained at or near atmospheric pressure. The transparent region 705 can be made of ceramic, glass or radiation permeable from the radiation source 711, so that the substrate "w" can receive from the radiation: 7" Most of the energy. In one aspect, the particle reduction chamber 700 can include a lift assembly 72A for raising and lowering the substrate "W" relative to the substrate support 7 (4) so that the robotic arm (not shown) can pick up The substrate on the lift assembly 720 is lifted and lowered. In an embodiment, the substrate support 704 is adapted to heat the substrate during the particle removal step to further enhance the removal of the contaminants from the surface of the substrate by providing energy during the particle reduction process or The efficiency of evaporation to remove particles on the surface of the substrate. In this configuration, the substrate support member 〇4 can be heated by the heating element 722 embedded in the substrate support 704 and an external power supply/controller (not shown), thereby heating the substrate support surface 707. To the expected temperature. In one embodiment, the substrate support is heated to a desired temperature using conventional infrared lamps. In one aspect, the substrate support 704 is heated to a temperature between about 25 〇〇c to about 85 〇 < t, and more preferably between about 35 (rc to about 65 〇 < t In one aspect, preferably, the substrate is still at a temperature of between about 25 (rc and about 55 〇〇c) during application of heat to the substrate during a prior art processing step of the substrate. At the time, the substrate is transferred to the particle reduction chamber 700 and the substrate support 704. 1911911916 In one embodiment, the support chamber 211 is a measurement chamber that is adapted to perform a process within the process Process step. Performing the preparation/analysis step 302 and/or the post-treatment/analysis step 31〇 before or after to analyze the substrate properties. In general, the substrate properties that can be measured in the measurement chamber include,

However, it is not limited to measuring the inherent stress or inherent stress in one or more layers deposited on the surface of the substrate, the film composition of one or more deposited layers, the number of particles on the surface of the substrate, and the surface of the substrate. The thickness of one or more film layers. The system controller 102 can then use the data collected from the measurement chamber to adjust one or more process variables in one or more of the process steps to produce the desired result on the subsequently processed substrate. Examples of measuring chamber hardware and control algorithms suitable for measuring and analyzing surface particles of a substrate are disclosed in U.S. Patent Application Serial Nos. 6,63,995, 6,654,698, 6,952,491, and This document is hereby incorporated by reference in its entirety in its entirety by reference. i Film Analysis Pulse Narrow In one embodiment, the support chamber 211 is a measurement chamber that is adapted to measure film composition and thickness deposited on the surface of a substrate using conventional optical measurement techniques. Typical composition and thickness measurement techniques include conventional ellipsometry, reflectometry, or X-ray photoelectron spectroscopy (XPS) techniques. The expected area on the surface of the substrate is fed back to the system controller i02 using the composition and thickness measurements measured by these techniques, and one or more upstream or downstream processing steps within the process sequence can be adjusted. 20 200811916 The system controller 102 stores and analyzes substrate composition and thickness results to change one or more process variables to improve process results achieved on a subsequently processed substrate and/or to be adjusted downstream of the support chamber 211 Process parameters of the process to correct defects in the treated substrate. In one example, after the Ερι layer has been deposited on the surface of the substrate, a composition or thickness analysis is performed to adjust process variables such as RF power, process pressure, gas flow rate, film thickness, deposition rate, etc. to correct the process to avoid One time Ep] [Deposition process results in undesired process. Ellipsometry is a non-aggressive optical technique used to measure film thickness, interface roughness, and composition of thin skin and multilayer structures. The method measures changes in the polarity of the light reflected from the surface of the sample to determine conventional elliptical measurement parameters, such as amplitude changes (ψ), phase shifts (Δ). These optical parameters can then be compared to computer mode or stored data in the system controller i 02 to determine the sample structure and composition of the region on the surface of the substrate. Reflectometry is an analytical technique that uses the total external reflection effect of optical radiation to study thin film layers. In the reflection analysis technique, the optical radiation reflection from the sample is measured at different angles, so thickness and density, and surface roughness can be determined. These reflections, measurements, and gentlemen can then be compared to computer mode or stored data in the system controller 102 to determine the sample structure and composition of the region on the surface of the substrate. X-ray photoelectron spectroscopy (xps) devices can be used to measure the elemental composition, chemical state, and electronic state of a material's μ & elements. The XPS spectrum is obtained by irradiating the material with an X-stop and an octal beam while using conventional measurement techniques to measure the kinetic energy and amount of electrons that are removed from the material to be analyzed. Then J will 21

200811916 These XPS results are compared to the computer mode or storage number in the system controller 102 to determine the sample structure and composition of the region on the surface of the substrate. In one embodiment, a pattern recognition system is used in conjunction with one or more analysis steps performed in support chamber 2 11 to provide analysis and feedback regarding the state of the selected regions on the surface of the substrate. In general, the pattern recognition uses an optical detection technique to scan the surface of the substrate and compare the data received from the scan with the data stored in the controller so that the controller can be positioned on the surface of the substrate. Where to take measurements. In one embodiment, the map recognition system includes a controller (eg, controller 〇 2 (FIG. 2)), a C CD camera, and a pedestal adapted to be set relative to the c cd camera. The substrate on the pedestal. During the process, the data stored in the controller's memory is compared with the number received by the CCD camera as it passes through the substrate surface, so the area on the surface of the substrate to be tested can be found and analyzed using components within the measurement chamber. The area. Substrate Bending Stress Measurement Analysis Chamber In another embodiment, the support spleen to 211 is adapted to measure stress or tension in a film on a substrate surface using conventional bending measurement techniques (strain) ). It should be noted that , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Seven Known Eyes a. Contains the force and tension in a region of the substrate. A force can be configured to measure the - or multiple process steps within the substrate acoustic program during a conventional stress or tension change of 5 or curvature::::' to perform stress within the substrate According to the internal system of the unified case, the record of the transfer of the data according to the strength of the tribute Gongying degree Zhang 22

200811916 Force, then feedback the results to system controller 102 102 to determine one or more actions that need to be within the process. The appropriate measure for measuring substrate stress should be obtained by KLA-Tencor, Inc., Nanometrics. In one example, it is preferred to measure the stress or tension of the previously deposited EPI layer, and the data 102, the system controller 1 〇 2 then decide how to improve the process results achieved, or even stress or strain the downstream process. The problem noted on the measurement. The substrate is bent (b 〇 w r e s u 11 s ) to adjust a process such as RF power, process pressure, film thickness, and subsequent substrate surface. XRD Measurement Chamber In one embodiment, X-ray diffraction (XRD) technology is applied to the cluster device to measure film thickness film stress or tension. A typical XRD technique is used; i Law) to aid in the analysis and interpretation of the diffraction pattern produced when one or more pedicles are irradiated. Typically, there is an X-ray source, one or more radiation detectors, an actuator that can be coupled to the substrate to engage the substrate support relative to the substrate, and is therefore economical. Performing one or more process steps n, so that the system controller process steps can be taken from the feedback generated by the Therma-Wave process steps to the system controller to adjust on the subsequent processing substrate to solve From the substrate controller 102 using or a variety of process variables, deposition rate to improve the measurement chamber within 1 、, film composition and thin F Lager's law (Bragg's surface area exposed to X says that the XRD chamber contains 23 200811916 The results obtained from the XRD-type measuring chamber can be used to measure various properties of the film on the surface of the substrate before or after a substrate support and X-ray source, or phase generation and analysis of the diffraction pattern. By using the system controller 102, the results received from the xrd chamber can be used to adjust the process variables of various process steps to modify the results of the process. In one example, the previous deposition process is preferably measurable. The stress of the layer formed in the step. Because &, the system controller 102 can be used to adjust one or more process variables using the XRD result.

For example, RF power, process pressure, film thickness, and deposition rate are used to improve process results. Using a measurement chamber (eg, RD cavity to) that can display several different film characteristics such as stress, film composition, thickness, etc., at different stages of the process, relative to configurations that use separate separation measurement chambers to perform such analysis, Helps reduce system cost and reduce system footprint. The cluster 5 is also reliable and reduces the extra time required to transport the substrate between the chambers. Figure 7 shows a cross-sectional side view of a support chamber 211 or measurement chamber 75A that can be used to perform process procedures (e.g., as described below for process 300 = process routines 3〇1A-3〇1B) The substrate properties are analyzed before or after one of the bird steps. The measurement chamber 75A can be mounted at any available location within the cluster device, such as location 114A-114F (Fig. 2) or location 214A-214E (Fig. 3). Generally, the measurement chamber 75A includes a garden 761, an in-vibration assembly 811, and a substrate support. The substrate support 7 54 has a substrate support surface 757. The enclosure (1) typically includes a chamber body 752 cavity to cover 753 and a transparent zone 755. In one aspect, the enclosure 751 includes one or more seals 756 for sealing the process zone "0" so that it can be evacuated to a vacuum 24 200811916 state during a process using a vacuum pump (not shown). In one aspect, the processing zone 770 is evacuated to a pressure of between about 1 Ο 6 Torr to about 700 Torr. The transparent zone 755 can be made of ceramic, glass, or from the measuring component 8 11 3 radiant radiation is made of other materials that can be penetrated. In one embodiment, radiation emitted from the source 813 strikes the surface of the substrate through the transparent region 755 where the radiation is reflected and returned Passing through the transparent zone 755, it is collected by the inductor 8 1 2 contained in the measuring component 811. In one aspect, the measuring chamber 75 5 includes a lifting assembly 720 'which is adapted to support relative to the substrate The piece 754 raises and lowers the substrate rw" so that a robotic arm (not shown) can transfer the substrate between the measurement chamber 750 and other processing chambers within the cluster device. Figure 8 of the I gold support cavity shows a cross-sectional side view of the transfer chamber n〇 containing the support chamber assembly 800, which is included in a process that can be adapted to perform a measurement process, a pre-treatment process, or Process the processing steps within the support chamber 2 i ^. In one embodiment, as shown in Figure 8, the support chamber assembly is configured to reduce the amount of particulates on the surface of the substrate during the preparation/analysis step 302 and/or the post-treatment/analysis step 312. In addition to enclosing the components, the support chamber assembly 800 typically contains all of the components provided in the particulate reductions described above to 700, such as the chamber body and the chamber cover 703, respectively, to transfer the chamber base u 〇B and transfer chamber cover ii〇a replaced. In one embodiment, the substrate support 704 and the lift assembly 72 are disposed within the transfer area 11GC and are mounted (4) the transfer of the wheel chamber m 25 200811916 on the chamber base Π 0 B, thus adjacent one Or a plurality of processing chambers (eg, Figure 8 shows the processing chamber 201). In this configuration, the source of radiation γη is coupled to a branch member 808 mounted on the transfer chamber cover 110A such that radiation emitted from the light source 711 passes through the transparent region 705 and impinges upon placement of the substrate support member The substrate 704 supports the substrate w on the surface 7〇7. The substrate controller "102" can be transferred between the robot blade assembly 113A and the substrate support 704 using the system controller 102 and an actuator (not shown) positioned within the lift assembly 720. The support chamber assembly 800 is typically configured to avoid collisions between the robot arm n3 and any components within the support chamber assembly 800 during the normal transfer operation of the robotic arm 113. Figure 9 is a side view of the support chamber assembly 8 - the scraping surface of the embodiment, which is disposed on a portion of the transfer chamber 11 , so that the substrate W1 can be placed on the robot arm blade assembly n3A of the robot arm 113 The above-described particle reduction step is performed while on. In one embodiment, the source of radiation 7 is mounted on the transfer chamber cover 110A, and the substrate w is placed under the source of radiation 711, thus during the step of transporting the substrate through the cluster device. When the substrate passes through the support chamber assembly 8 , the radiation emitted from the radiation source 711 can strike the surface of the substrate. In another embodiment, during the transfer step, the system controller 1 〇 2 and the robot arm 丨 3 are adapted to use the robot arm blade assembly! The crucible 3 A and the substrate w are positioned and held under the radiation source 7 11 for an expected period of time, so that the microparticle removal process can be performed on the substrate. The first drawing is a cross-sectional side view of the transfer chamber containing the support assembly 80 1 'the support assembly 8 is housed in the support chamber 2 , for performing one of the process procedures at 26 200811916 Before or after the process step, a preparation/analysis step 302 and/or a post-treatment/analysis step 31 is performed to analyze the substrate properties. In one embodiment, the support chamber assembly 801 is an XRD, XPS, stress measurement device, reflectometer, or ellipsometer type device configured to expose the substrate W from source 813 by exposing the substrate W Under the light shot, a part of the signal is received by the sensor 8 1 2 to measure the substrate characteristics. The results received by the support chamber assembly 80 1 are then communicated to the system controller 102' to cause the system controller 1 to adjust one or more process variables within the process program to improve the process results achieved within the system. The support chamber assembly 801 typically includes a substrate support 804 and a lift assembly 820 disposed within the transfer region u〇c and mounted on the transfer chamber base π Ob of the transfer chamber Π0. In an embodiment, the support chamber assembly 810 is disposed adjacent one or more processing chambers (eg, the process chamber illustrates the processing chamber 201). In this configuration, the measurement assembly 811 is The transfer chamber cover 110A is coupled, and the process surface W1 of the substrate W placed on the substrate supporting surface 8〇7 of the substrate support 804 can be observed through the transparent region 705 sealingly coupled to the chamber cover π〇α. . The substrate controller "w" can be transferred between the robot blade blade assembly 113A and the substrate support member 8A4 by the system controller 1A2 and an actuator (not shown) included in the lift assembly 820. The support cavity to assembly 801 is typically designed and configured such that the robotic arm 13 and any components within the support chamber assembly 801 do not collide with each other during normal transfer operations by the robotic arm US. Figure 11 is a cross-sectional side view of an embodiment of a support chamber assembly 8.1 disposed on the transfer chamber 110 so that it can be performed while the substrate w is placed on the robot blade assembly 113A of the robot arm 2008 200811916 113 The above preparation/analysis step 302 and/or post-processing/analysis step 310. In one embodiment, the substrate W is configured such that when the substrate passes through the support chamber assembly 801 during the process of passing the transfer substrate through the cluster device, the sensor 812 can receive from the source 8 1 3 Radiation emitted. In another embodiment, the system controller 102 and the robotic arm 113 are adapted to position and hold the robotic arm blade assembly 113 A and the substrate W, thus supporting the chamber assembly 8 可 1 in the substrate Analysis is performed on one or more areas. In an embodiment not shown, the support chamber assembly 8 and the support chamber assembly 80 1 are integrated into one complete assembly that is mounted at any available location within the cluster of foes, such as position j丨4 A _丨1 4 F (Fig. 2) or position 214A-214E (Fig. 3). In one embodiment, support chamber assembly 800 and/or support chamber assembly 8.1 is integrated into at least one of the load lock chambers 〇6A-l〇6B (Fig. 2 or 3). In an embodiment, the cluster device 100 includes a preparation chamber adapted to perform one or more pre-cleaning steps to prepare the substrate surface for subsequent component processing steps. . For the length of time between these process steps, Z waiting time is a key factor or exposure to the atmosphere or other sources of pollution = time will affect the yield of components produced, reproducibility and overall main road touch T double month b thousand ¥ In the production phase of the bulk component, the pre-cleaning step is usually an important example. The latency problem is caused by the amount of contaminant on the surface of the substrate. The amount of contaminant is usually exposed to the wafer from the wafer, or 28 200811916 Time-dependent time in organic pollutants escaping from other substrate processing components. In another example, the latency problem is caused by the native oxide layer prior to forming one or more contact level features, thereby affecting the performance of the components formed on different substrates in a batch.

In order to reduce the detrimental effects of the growth of the primary oxide on the formed semiconducting germanium element, the native oxide layer needs to be removed immediately before the next process step is performed, for example, in the gate of a metal oxide semiconductor (M〇s) device. The native oxide layer is removed prior to the oxide formation step. Therefore, performing these preparatory steps ensures that each substrate processing condition in the cluster device is the same 'and the process results are more reproducible. Therefore, the preparation step can effectively eliminate the time difference between the exposure of the first substrate and the last substrate in the batch to the atmospheric fouling and the difference between one batch of the substrate and another batch of the substrate. Impact. In one embodiment, the system controller 102 is adapted to monitor and control the latency of the substrate being processed within the cluster device 100. Minimizing the waiting time for the substrate to be processed in the processing chamber and prior to processing in the next processing chamber helps to control and minimize the effects of exposure to the source on the performance of the component. This embodiment is particularly advantageous when used in conjunction with the inspection/analysis and particulate/contamination removal steps described in conjunction with Figures 2 through 1 1 and other embodiments, as the analysis and/or particulate/contamination removal steps can be used further. One or more substrate processing steps within the process of using a pre-cleaning step and one or more substrate processing steps (eg, PVD, CVD, EPI, dry residue) are optimized. In one aspect, the analysis and/or particle/contamination removal steps can be used to further optimize the pre-cleaning process. 29 200811916 酉 0 0 In a cancer of the invention, the system controller 1 0 2 controls when to start Or end the time point of the s-table formulation step to increase system yield and reduce any latency issues. The pre-cleaning steps described herein may use a wet chemical process and/or a plasma modification process to prepare the substrate. Two examples of exemplary processes and hardware that can be used to perform one or more preparatory steps are as follows.

The preparation/analysis step in the 3°1Α procedure of the second two-wide program. No, it uses the plasma-assisted pre-cleaning process.

The venomous material forms a native oxide layer and other/objects on the surface of the substrate before the step. Since the base I will significantly affect the component" and the oxidized oxide layer and other contaminants will result in yield and process reproducibility, it is possible to perform a single trace or multiple pre-cleaning steps on the substrate. 1 3 13⁄4] Mountain >»«"p »

An exemplary process for the process steps: In addition to the pre-cleaning 302B in the collection device 1 〇 ° (Fig. 4), the 13th 〇 1A. In addition to the preparation/analysis step, it is possible to perform a process sequence of 30° on the substrate table similar to the process shown in Figure 5. In the example, the process program = 7 loaded auxiliary pre-cleaning tank ^ to view and analyze the substrate table "preparation" Analysis step 3〇2A is performed using the pre-determination or performing particle removal steps discussed below, followed by one of the procedures 3〇1A preparation/analysis steps 3〇2B. In process step 306, the process can be selected as follows: process T step 304 and substrate process step ▲ into the group, including oxide etch 30 200811916 engraving, metal etching, EPI, RTP, DPN, PVD, CVD (for example , CVD polysilicon, TEOS, etc.) or other suitable semiconductor substrate processing steps. In an embodiment, the preparation/analysis step 302B (hereinafter simply referred to as the pre-processing step) is performed in a pre-cleaning chamber 11 (FIG. 12), the pre-cleaning chamber 11 00 being adapted to perform an etching step and an in situ Annealing step. Pre-cleaning chambers and processes suitable for removing native oxides and other contaminants on the surface of the substrate

In the U.S. Patent Application Serial No. 60/5 47, No. 8 3, filed on Feb. 22, 2005, which is incorporated herein by reference in its entire entire entire entire entire entire entire disclosure The entire disclosure is incorporated herein by reference to the extent that it does not contradict the claimed invention. In one embodiment, the pre-cleaning chamber 1 1 〇〇 can perform a plasma-assisted chemical remnant process. The process performs both the substrate heating and cooling using a substrate heating process in a single process environment. Fig. 12 is a partial cross-sectional view showing the pre-cleaning chamber 11A. The pre-cleaning chamber n 00 is a vacuum chamber containing a lid assembly lioi, a temperature-controlled substrate supporting member 11 2, a chamber body 1110 whose temperature is controlled, and a processing chamber Π2〇. The processing zone 112A is an area between the cap assembly 1101 and the substrate supporting member 11A2. The substrate support member 1102 is generally adapted to support and control substrate temperature during processing. The lid assembly 1101 includes a process gas supply tray (not shown) and first and second electrodes (elements 113A and 1131) that define a plasma chamber to produce electropolymerization outside of the process 1112. The helium gas supply provides one or more reactant gases H31 and enters the processing zone disk (not shown) and the gas source 116 port connector to the plasma cavity through the second electrode 11 20 . The second electrode 1131 is disposed above the substrate and is adapted to be electrically

200811916 The slurry is assisted by dry etching to heat the substrate. Fig. 12 is a partial cross-sectional view showing the cleavage chamber 1100. In the embodiment, the sump main ejector chamber U00 includes the chamber main body 111 〇 = two m and the supporting member ι ΐ 4 〇. The cover assembly " to the upper end of the main body 1110 is directly connected to the body 1110 and the support assembly 11 40 is at least partially disposed. The inner chamber body 1110 of the chamber body 1110 includes a slit valve opening 1 1 7 formed on the side thereof for accessing the The pre-cleaning chamber 11 00 internal slit valve opening 11 1 1 择 is selectively opened and closed to allow the substrate gripping arm (eg, the painted robot arm 113) to enter and exit the interior of the chamber body. Jiang Wanggong version See? Also in the example, the chamber to the soil basket i 1 i ϋ includes a fluid passage ^ in the opening 3 to circulate a heat body in the fluid passage 111 2 . The heat transfer wheel body can heat the fluid or coolant and control the temperature of the chamber body 间 between the process and the substrate 偻% wheel 4. Reading the temperature of the body 1110 Φ && amp important to avoid unnecessary gas or Chang

The knot is on the chamber walls J!. For example, the non-heat transfer fluid comprises water, ethylene bis. An example of a heat transfer fluid may also include nitrogen. The lid assembly 1101 typically includes a first electrode 1130 to produce a plasma containing _ or more reactive species within the piece 1101 for performing or a plurality of pretreatment steps. In one embodiment, the first electrode i丨3 is supported on and electrically isolated from the top plate 1131. In one embodiment, the electrode 1130 is coupled to a power source m2, and the second electrode 1131 is configured to transfer process gas from the gas source 116 through the top plate hole 1133 to the processing region n2. Can be at the first. At, cover the cavity on the wall.谲 Pick-up machine 1110 is in the flow of the main body to consolidate or cover the first group. Inner electrode 32

A plasma containing a process gas is generated in a volume between the 200811916 1130 and the second electrode 1131. A power source 11 3 2 capable of activating these gases into a plasma of reactive species and species can be used. For example, the power source 1 i 3 2 can have an energy of (RF), direct current (DC), or microwave (MW) power type to Π 20. Alternatively, a remote activation source, such as a remote electrical cold, can be used to generate a reactive species plasma, which is then transferred into chamber 11 00. In an embodiment, the second electrode may be heated depending on the process gas and the operation performed in the cleaning chamber 110. In an embodiment, a heating element 11 3 5, such as a resistance heater first electrode 1131 or the Distribution board link. A thermocouple coupled to the second or the distribution plate can be utilized to assist in temperature regulation. The gas source 1160 is typically used to provide one or more pre-cleaning chambers 11 〇 . The particular gas used will depend on the process that will be performed within chamber 11 00. Exemplary gases can include, but are, or a variety of precursors, reducing agents, catalysts, carrier gases, purge gas bodies, or any mixture or combination thereof. Typically, the pre-cleaned one or more gases flow into the lid assembly i i 0 i and then enter the chamber body 1110 through the 1131. Depending on the process, the deliverable gas is passed to the pre-cleaning chamber U00, and the vacuum assembly 1150 can be mixed in the pre-cleaning or before the gas is delivered to the pre-cleaning chamber u. The slot pumping channel 1115 is exhausted into the chamber body n〇(). The support assembly 11 40 can be at least partially disposed in the chamber to maintain the reaction to transmit radio frequency to the processing zone. The generator is pre-cleaned. At the pre-1131 °, gas can be confined to the electrode 1131 to the pre-cleaning, integral, clean chamber 1 0 0 second electrode any number of chambers 1100. Then gap 1114 and process gas 0 body 1110 33 200811916

Inside. The support assembly 114G can include a substrate support member to support the material (not shown in this view) to facilitate processing the substrate within the chamber body n i . The substrate supporting member η 02 may be coupled to a lifting mechanism (not shown) extending through the bottom surface of the chamber body 111. The lifting mechanism (not shown) may utilize a bellows (not shown). Elastomerically sealed to the chamber body 1110' to prevent vacuum from leaking around the lift mechanism. The lift mechanism allows the substrate support member 1102 to move vertically between a process position within the chamber body U10 and a lower transfer position. The transfer position is slightly lower than the slit valve opening i i U formed on the side wall of the chamber body 111 0 . In one or more embodiments, the substrate support member 丨1〇2 has a flat circular surface or a substantially flat circular surface to support the substrate to be treated thereon. The substrate supporting member ii 〇 2 is preferably made of aluminum. The substrate supporting member 1102 is vertically movable within the chamber body ln, and thus the distance between the substrate supporting member 1102 and the cap assembly 1101 can be controlled. The base member 1 1 2 2 may include one or more holes (not shown) formed therethrough to lift the crucible (not shown). Each lift is typically constructed of a ceramic or S-material and is used to control and transport the substrate. In one or more embodiments, a substrate (not shown) may be secured to the material support member 11 G2 using an electrostatic or vacuum chuck. In one or more embodiments, a mechanical ash (not shown) may be utilized to hold the substrate on the substrate support member ι 2, such as a conventional wafer huck. Preferably, the substrate is secured by electrostatic loss. The temperature of the support assembly 114 is circulated through the substrate. Fluid in the body of the member 11 02 or in the plurality of fluid channels u 4 ] 34 200811916 Control. Preferably, the fluid passage 1 1 4 1 is disposed around the substrate support member 102 to provide a uniform heat transfer wheel to the substrate receiving surface of the substrate-retaining member ιι 2 . The fluid passage 1141 can flow a heat transfer fluid to heat or cool the substrate support member 1102. Any suitable heat transfer fluid may be used, such as water, nitrogen, ethylene glycol or mixtures thereof. The support assembly i i 4 〇 may further include a thermocouple (not shown) to monitor the temperature of the support surface of the substrate support member 102. The substrate support member 1102 can be raised adjacent to the lid assembly 1101 during operation to control the temperature of the substrate being processed. Thus, the substrate can be heated by the radiation emitted from the cover member 1101 or the distribution plate by heating the cover member ι 01 or the distribution plate by the heating member 1135. Alternatively, the substrate can be lifted away from the substrate support member U02 by the lifts to be adjacent to the heated lid assembly 1101. An exemplary dry etching process for removing a native oxide on the surface of a substrate using an ammonia (Nh3) and three t* nitrogen (NF3) gas mixture in a pre-cleaning chamber will now be described. The dry etch process begins by placing a substrate, such as a semiconductor substrate, in a pre-cleaning chamber. Preferably, the substrate is held on the support assembly 110 of the substrate support member ιι 2 using a vacuum or electrostatic chuck during the process. It is better to have the chamber body!丨丨〇 Maintain a temperature between 5 〇艽 and 8 ° ° C, preferably about 65 t:. The chamber body Η is maintained by passing the heat transfer medium through the fluid passage HI] located in the chamber to the body. The temperature. During processing, the substrate is cooled to less than 65t, such as between 15, by passing a heat transfer medium or coolant through fluid passages 1112 formed in the substrate support. Between 〇 and 5 (rc. In another embodiment, 35 200811916 maintains the substrate at a temperature between, for example, 。. Typically, the substrate support is maintained below about 2 2 ° C, if And ϊ μ n C to reach the expected substrate temperature indicated by the upper 。. Then ammonia and nitrogen trifluoride gas are introduced into the pre-cleaning chamber to form: a clean gas mixture... each of the gases in the chamber And the amount of the oxide layer to be removed, the geometry of the substrate to be cleaned, and the volumetric capacity of the plasma and the chamber body "

The gas mixture is adjusted by factors such as volumetric capacity. In one aspect, a gas is added to provide a gas mixture of ammonia to at least 1 " of nitrogen trifluoride. In another aspect, the gas mixture has a molar ratio of at least about 3 to 1 (ammonia gas to three; nitrogen). Preferably, the gas systems are passed into the dry money chamber with a molar ratio of between 5:! (ammonia to trifluoronitrogen) to 3 0 ·1. More preferably, the molar ratio of the gas mixture is from about 5 to 1 (ammonia to nitrogen trifluoride) to about 1 Torr, and the molar ratio may also fall at about 1 :1 (ammonia gas pair) Nitrogen trifluoride) and between about 20:1. A cleaning gas or carrier gas may also be added to the gas mixture. Any suitable cleaning gas/carrier gas may be used, such as argon, helium, hydrogen, nitrogen or mixtures thereof. Typically, the total gas mixture will have from about 0.05% to about 20% by volume ammonia and nitrogen trifluoride. The rest is the carrier gas. In one embodiment, the cleaning gas or carrier gas is passed into the chamber body 1110 prior to the reactive gases to stabilize the pressure within the chamber body. The operating pressure within the chamber body can vary. Typically, the pressure is maintained between about 5 Torr (mT rrrr) and about 30 Torr (Ton*). Preferably, the pressure is maintained between about 1 T rr rr and about 1 〇 T0 rr. More preferably, the operating pressure within the chamber body is maintained between about 3 Torr and about 6 Torr. 36 200811916 RF power between about 5 and about 600 watts is applied to the first electrode to ignite the plasma of the gas mixture within the plasma chamber. Preferably, the RF power is less than 1 watt. More preferably, the frequency at which this power is supplied is very low, for example below 100 kHz. Preferably, the frequency ranges from about 5 kHz to about 90 kHz. The plasma energy decomposes the ammonia gas and the nitrogen trifluoride gas into reactive species which combine to form a highly reactive gas phase ammonium fluoride (NH4F) compound and/or ammonium hydrogen fluoride (NH4F.HF). These molecules then flow through the second electrode 11 31 to react with the surface of the substrate to be cleaned. In one embodiment, a carrier gas is first introduced into the pre-cleaning chamber to produce a carrier gas plasma, and then a reactive gas, ammonia gas, and nitrogen trifluoride are added to the plasma. Without wishing to be bound by theory, it is believed that the etching gas, NH4F or NH4F. HF will react with the surface of the native oxide to form products such as hexahydrate ((NH4)2SiF6), ammonia and water. Ammonia and water are vapors under process conditions and are removed from the chamber by a vacuum pump coupled to the chamber. A (NH4)2SiF6 film was left on the surface of the substrate. After the plasma treatment step is performed, a (NH4)2SiF6 film is formed on the surface of the substrate to raise the substrate support to an annealing position adjacent to the heated second electrode. The heat emanating from the second electrode 1131 should be sufficient to decompose or sublimate the (NHUhSiF6 film into a product such as volatile gas, fossil, ammonia, hydrogen fluoride, etc. The vacuum component i丨5 〇 is then used to remove these volatility from the chamber. Product. Typically, the film is effectively sublimed from the substrate using a temperature of 75 ° C or higher. Preferably, a temperature of 100 ° C or higher, such as between about 10.5 and about 200, is used. The temperature between ° C. 37 200811916 The thermal energy system in which the NHOeiF6 film is decomposed into volatile components is convected or radiated by the second electrode. A heating element 1135 is directly coupled to the second electrode 1131, and is activated to The two electrodes and the components in thermal contact therewith are heated to a temperature between about 75 ° C and about 250 ° C. In one aspect, the second electrode is heated to about 1 〇 (rc to about 15 〇〇). The temperature between c, for example about 120. (:. Once the film has been removed from the substrate, the chamber is cleaned and emptied. Then by lowering the substrate to the transfer position, de_chueking Substrate and transport the substrate through the slit valve opening 111 1 to remove the clean substrate from the chamber. As shown in Fig. 13, after performing the preparation/analysis step 3〇2b, one of the groups selected from the following processes may be utilized. One or more substrate processing steps of the process to process the substrate, including oxide etching, metal etching, EPI, RTP, DPN, PVD, CVD (eg, CVD polysilicon, TEOS, etc.) or other suitable semiconductor substrate processes Step Cleaner Cleaning Chamber Configuration In another embodiment, a wet cleaning type pre-cleaning process (hereinafter referred to as wet cleaning) is performed prior to performing one or more substrate component production process steps in a process sequence Process) to remove native oxide layers and other contaminants on the exposed substrate surface. Figure 14 shows a process sequence 3〇ib that can be improved by performing one or more wet cleaning pre-cleaning process steps Component yield and process reproducibility. Wet cleaning process can be performed on the surface of the substrate, for example as described in conjunction with Figures 38 200811916 13 and 14 to remove native oxides, particles and other contaminants. Out The exemplary process sequence executed immediately within the cluster device of Fig. 15 is similar to the process program 301A shown in Fig. 13 except that the preparation/preparation is performed before the preparation/analysis step 3〇2A is performed/ Analysis step 3 〇9 Γ. A _ 杳 & / , & / where j 〇 2C. In a M % example, the preparation / analysis step

Step 302A includes a substrate preparation/analysis step (e.g., preparation/analysis step 320 of Figure 5) or the particulate removal step described above. In one embodiment, the preparation/analysis step 302 C is a wet cleaning type substrate preparation step as described below. In an embodiment of the process 301B, after performing the preparation/analysis step 302C, the substrates continue to the substrate processing step 〇4 and the substrate processing step 306, which may be selected from the group consisting of semiconductors The group of element formation steps includes oxide etching, metal etching, EPI, rtp, DPN, PVD, CVD (eg, BLOk, CVD polysilicon, TEOS, etc.) or other suitable semiconductor substrate processing steps. Fig. 15 is a plan view of a cluster device 1 〇 1 embodiment, which includes a processing area 120, a connection module 350, and a front end environment 104. The processing zone 120 typically contains components as described with reference to Figure 2, which typically include one or more processing chambers 201-2 04, one or more support chambers 211 (two shown), a transfer chamber 11 0 and load lock chamber 1 06A-B. The load lock chambers 106A-B are in communication with the transfer chamber 11A and the connection module 350. It should be noted that the support chamber 2 11 can be disposed in other areas of the cluster device, such as locations 114A-F, locations 214A-D, and locations 354A-B within the linkage module 350. The linkage module 350 typically has a transmission area 351 that connects the 39 200811916

The front end environment 104 and the processing area 1 20. The connection module 350 typically includes a coupling robot 3300 and one or more wet cleaning chambers 306. In an embodiment, the connecting robot arm 330 has a sliding assembly 323, which is adapted to enable the connecting robot arm 33 to be in the load lock chamber 106Α, the wet cleaning chambers 36 and the The substrate is transferred between the support stations 1 〇 4 a in the front end environment 104. The connecting robot arm 330 disposed in the transmission area 35 of the connecting module 350 is generally linear, rotatable, and vertically movable to be installed in the load lock chamber 106 and in the front end environment 1〇4. Transfer the substrate between the support table 04A. The front end environment 1〇4 is typically used to transfer substrates from a wafer cassette (not shown) located in a plurality of wafer cassettes 1 to 5 to a desired location through a normal pressure cleaning environment/enclosure, such as Support table 1 04 A. The wet cleaning chamber 360 is typically a chamber adapted to utilize - or a plurality of wet chemical processing steps to remove the original oxide layer and other contaminants on the surface of the exposed substrate. The wet cleaning chamber 360 can be an EmersionTM chamber or a TEMPESTTM wet cleaning chamber available from Applied Materials. An example of a wet cleaning chamber 306 is further described in U.S. Patent Application Serial No. 9/891,846, filed on Jun. 25, Jun. U.S. Patent Application Serial No. 10/121,635, the entire disclosure of which is incorporated herein by reference. The wet cleaning chamber 306 is typically configured to clean the surface of the substrate during the process. In one aspect, the wet cleaning chamber is adapted to perform one or more processing steps to impart a functional group to the end of the compound exposed on the surface of the substrate. The functional groups linked and/or formed on the surface of the substrate comprise a hydroxyl group 40 200811916 (OH), an alkoxy group (OR, wherein R = methyl, ethyl, propyl or butyl), a halogenoxy group (OX' χ = defeat, chlorine, bromine or angstrom), halide (gas, chlorine, bromine or iodine), oxygen radicals and amino groups (NR or NR2, where R = gas, methyl, ethyl, propyl or butyl) . The wet cleaning process exposes the surface of the substrate to a reactant such as ammonia, diborane (Β#6), decane (SiH4), diabase (SiH6), water, hydrogen fluoride (HF), hydrogen chloride ( HC1), oxygen, ozone, hydrogen peroxide, hydrogen, hydrogen atoms, nitrogen atoms, oxygen atoms, alcohols, amines, plasmas thereof, derivatives thereof, or combinations thereof. The functional groups may provide a substrate for the chemical precursor used in the subsequent or atomic layer deposition (ALD) step to bond to the surface of the substrate. In one embodiment, the wet cleaning process exposes the surface of the substrate to a reactant for between about 1 second and about 2 minutes. The wet cleaning process can also include exposing the surface of the substrate to an RCA solution

(SCI/SC2), HF-last solution, from WVG

Or water vapor, peroxide solution, acidic solution, laboratory solution, its plasma, its derivatives or combinations thereof in the IS S G system. The available wet cleaning process is described in U.S. Patent No. 6,858,5,47, the commonly assigned application, and the No. 21, 2002, filed on November 21, 2002, entitled "Enhanced Surface Finishing of Nucleation of High Dielectric Constant Materials" And U.S. Patent Application Serial No. 10/3, 2,752, the entire disclosure of which is incorporated herein by reference in its entirety in its entirety in its entirety in its entirety. In an example of a wet cleaning process, prior to exposing the substrate to a first process step to form a chemical oxide layer having a thickness of about 10 angstroms or less (e.g., about 5 angstroms to about 7 angstroms), Primary oxide layer. The hydrogen fluoride final solution can be used to remove the native oxide. The wet cleaning process can be performed in a TEMPESTTM wet cleaning system available from Applied Materials 41 200811916. In another example, the substrate is exposed to water vapor from a WVG system for about 1 second. Conventional hydrogen fluoride final processing steps use an aqueous solution typically containing less than about 1% hydrogen peroxide as the final step in the process to form a passivation layer on the exposed surface. The southern quality gate oxide layer can be formed altogether by the final process of hydrogen fluoride. As shown in FIG. 14 , after performing the preparation/analysis step 3 〇 2 a , the substrate may be processed by _ or a plurality of substrate processing steps selected from the group consisting of the following processes, including Oxide etching, metal etching, EPI, RTP, DPN, PVD, CVD (eg, CVD polysilicon, TE〇s, etc.) or other suitable semiconductor substrate processing steps. The use of IJV cleaning system to change the basics as semiconductor components shrink in size, such as 45 nm nodes or smaller, the growth of primary oxides and / or exposure to organic pollution caused by the latency effect becomes a more serious problem . To reduce the deleterious effects of native oxide growth or dyeing on the formed semiconductor components, one or more cleaning processes may be performed prior to performing the deposition step to ensure that the substrate surface is at the desired cleanliness level. In an embodiment of the cluster apparatus, the one or more processing chambers 2 - 1 - 24 or the support chamber 211 contain a source of radiation: two uv lights adapted to deliver one or more wavelengths to clean the surface of the substrate to The latency effect is reduced to prepare the substrate for subsequent deposition processes, such as CVD, PVD or ALD type processes. In this configuration, the process step procedure performed on the surface of the substrate within the cluster device includes the step of cleaning the surface of the substrate (hereinafter referred to as the UV cleaning process) using a source of 1 2008. It is particularly useful to add a UV cleaning process prior to the deposition step, particularly when performing a UV cleaning process just prior to performing a staggered deposition step because of the nucleation of the deposited EPI layer and the resulting EPI. The in-layer stress is very sensitive to the state of the surface at the beginning of the process. In one embodiment, the substrate processing private sequence comprises a preparation step, such as a wet cleaning type substrate preparation step (preparation/analysis step 3〇2c of FIG. 14) or a pre-cleaning treatment step (preparation/analysis step of FIG. 13) 3〇2B) and the uv cleaning process step to improve the cleanliness of the substrate surface, and to more reproducibly control the surface of the substrate before performing substrate manufacturing steps such as Ερι, CVD, PVD or ald deposition processes. The preparatory steps, such as a wet cleaning substrate preparation step or a pre-cleaning process step, can therefore be used to remove most of the contaminated or native oxide layer on the surface of the substrate while the UV cleaning process is used to carry out the subsequent basis. Final preparation and/or purification of the substrate surface prior to the material processing step. In one embodiment, the use of the UV cleaning process reduces the temperature at which the cleaning and/or passivation process is performed to reduce the thermal budget relative to other conventional cleaning techniques. For example, when using the desired amount of UV radiation, the substrate temperature during the process can be below 750 °C, and typically below 700. (: In one aspect, the UV-assisted process is performed at a temperature between about TC and about 700 ° C. Conventional ruthenium-containing substrate cleaning and purification steps, typically performed during the EPI redundancy step Used at the moment before, and usually performed at a temperature between about 750 and about 1000 ° C. In one aspect, by treating the substrate in a surrounding environment containing hydrogen in the presence of UV light, it is possible Reducing the implementation of the cleaning and passivation protection of the temperature and the required temperature or the time required to clean the surface, or at the same time, the cleaning process is prepared. In one embodiment, the long-lasting ruthenium-containing film is performed. The surface of the passivated ruthenium-containing substrate is deposited by epitaxy. Referring to Figure 6, the right is suitable for performing a cleaning process on the substrate " _ ' the particle reduction chamber 700 & - in one aspect, The particle reduction chamber 7 includes a package 701, a radiation source 711, a substrate support member 704, a pair of gentlemen from 1 w. ... 22, and a vacuum pump 73 6 And a gas transport source 735, the gas enthalpy body source 735 is adapted to transport, for example, hydrogen The cleaning gas of the reducing gas is supplied to the I treatment zone 71. During operation, during the cleaning and passivation of the substrate surface of the substrate, the vacuum is used to control the pressure in the treatment zone to about Between 8 。. The heating element 722 and system control _ 1G2 are used to control the substrate temperature during the process from about 55 CTC to about 75 (between rc ' and usually between about 5 and about 7 :. (: Between. Using the system controller 1〇2 and the source of the radiation, the power density of the uv is controlled to be in the range of about 1 mW/em2 to about 25 淸^2 and has a distance of 120 nm. One to more wavelengths between about 43 nanometers. In the case of consumption, the substrate is exposed to a nitrogen-containing cleaning gas while being exposed to radiation having a wavelength of about 180 nm or less. UV cleaning process. During the uv cleaning process, the gas flow rate is maintained between about 25 Sim and about 50 slm, while the substrate surface temperature is between t and 65 (TC range for about i minutes to about 5 minutes. The pressure in the zone can range from about o.1T rr to about 100 Torr, usually at 44 2008. 11916 is in the range of from about 5 Torr to about 30 Torr. The power density of the UV radiation delivered to the surface of the substrate can range from about 2 mW/cm2 to about 25 mW/cm2. In one embodiment, as in Figure 16. The process is performed after the pre-cleaning process step 302B is performed, and the UV cleaning process 302D is performed before the process step 3〇4 is performed. The process program 301C shown in FIG. 16 is similar to the process program shown in FIG. In addition to the transfer step A3, and the UV cleaning process 302D to perform the UV cleaning process 302D. It should be noted that the Figure 16 is not intended to limit the order of execution of the UV cleaning process within a process sequence, as the cleaning process can be performed before or after any of the process steps without departing from the basic scope of the invention. In general, it is preferred to transfer or maintain the substrate in a vacuum or inert environment after performing the UV cleaning process 302D to avoid or minimize interaction of the substrate surface with oxygen or other contaminants to prevent The native oxide is grown or damaged on the purified surface prior to performing the next substrate processing step. Therefore, it is generally preferred to perform the UV cleaning process in a cluster device having a low oxygen partial pressure or other contaminants. In another embodiment, the source of UV radiation, the substrate heater, and the source of cleaning gas are connected or contained within one or more processing chambers within the cluster device (eg, processing chamber 2〇1_2〇4), Therefore, the process can be performed in the chambers. In this configuration, the UV cleaning process can be performed within the geographic cavity before performing the deposition process, thus eliminating the need for a separate transfer step AVI J, it (Figure 16). In a real & example, a source of uv radiation (not shown) is added to the pre-cleaning chamber 11 of Figure 12 to improve the process results of the pre-cleaning process performed on the surface of the substrate. . 45 200811916 In one embodiment, after performing the UV cleaning process, one or more measurement steps are performed on the substrate (eg, preparation/analysis step 312A of Figure 134) to analyze the substrate The status of each zone allows the system controller to make corrective actions to improve the effectiveness of the UV cleaning process on subsequent substrates and/or to improve process results achieved by one or more subsequent processes. Generally, the UV cleaning process variable can include a UV cleaning process time, a UV power intensity delivered to the substrate surface, and/or a substrate temperature.

In another embodiment, after performing the UV cleaning process, one or more measurement steps (eg, preparation/analysis step 312 A of the first 1-3 graph) are performed, and then performed on the surface of the substrate One or more subsequent substrate processing steps (eg, PVD, CVD, or ALD deposition steps). In this example, the measurement steps can be used to quickly analyze the state of an area on the surface of the substrate to allow the system controller to adjust one or more process variables in one or more process steps within the process. To improve the process results achieved. In general, the process variables can include any UV cleaning process variables (eg, UV cleaning process time, UV source power) or substrate processing process variables (eg, RF power, process pressure, gas flow rate, film thickness, deposition rate). , substrate temperature). In one example, an XRD device is used to measure and read back the film stress deposited on the surface of the first substrate. Therefore, if the measured stress exceeds the expected range, the system controller can perform, for example, adjusting the time of the uv cleaning process to improve the surface cleanliness of the substrate and reduce the stress of the deposited layer formed on the second substrate. This process is very important when the properties of the deposited film (e.g., stress/tension) are very sensitive to the surface state of the substrate prior to performing a deposition process such as a doped layer deposition. 46 200811916 The composition of the system is due to the fact that the integration of the test steps into the cluster device allows for quick feedback of expected or unexpected after the process or process steps. Process Fruit' to help reduce substrate scrap and component variability. The measurement steps within the cluster device can also improve the cluster device by eliminating the wasted time of testing the round or quality wafers within the cluster device to pre-evaluate the need for one or more steps. Productivity. In addition, one or more measurement chambers located within or in communication with a vacuum or inert environmental zone (eg, transfer domain 110) of the controlled cluster device may avoid interaction of the substrate surface with oxygen or other contaminants And/or minimize it, providing faster and more realistic measurements relative to process procedures that require measurement steps to be performed outside of the controlled vacuum or inert environment. Since it is generally preferred to configure the cluster device to enable the measurement chamber to be connected to the cluster device such that the transfer steps to and from the measurement chamber can be performed in an environment with low oxygen partial pressure or low contaminants .

Υγ„ H In one embodiment, a substrate processing chamber contains a source of UV radiation that is suitable for use during substrate processing steps (eg, substrate processing steps 3, 4-3 of Figures 13, 14 and Figures). 6) Reduce the substrate process temperature. As the special size is reduced to 45 nm and lower, the need to reduce the substrate process temperature is becoming more and more important. The process temperature needs to be reduced in order to minimize or avoid the formation of materials. Component yield problems caused by interdiffusion between the various layers of the component. Both the substrate preparation step and the substrate fabrication step require a lower system to lower the substrate process temperature to improve the thermal budget of the formed component, 47 200811916 and improve Component yield and useful life of components. Therefore, it is preferred to use one or more process steps with lower process temperatures in the component manufacturing process. To accomplish this task, a substrate processing chamber (hereinafter referred to as the processing chamber) Exposing one or more surfaces of the substrate to UV radiation during the step of performing the component fabrication process. In use, the source of UV radiation is adapted to deliver sufficient energy to the surface of the substrate To reduce the amount of thermal energy required to cause the deposition or etching process to occur on the surface of the substrate. Typically, the wavelength is between about 5 and about mWatts at a wavelength between about 430 nanometers (nm) or less. The source of radiation from the power density of cm2 to 11 ¥ radiation to the surface of the substrate can be used to assist most of the conventional CVD or ALD processes.

The integrated processing chamber contains various functional components of the stainless steel housing 1600. In a 1605 and lower quartz chamber 1624 embodiment, as shown in Fig. 17, the sinking, cover structure 1601 covers the processing chamber - the quartz chamber 163 includes an upper quartz chamber in which the upper quartz chamber 1605 contains the 48

The 200811916 UV radiation source 1608, and the lower quartz chamber 1624 contain a process 1 6 1 8 . Reactive species are supplied to the process space 1 6 i 8 and process by-products are removed from process 1618. A substrate ι614 rests on a pedestal' and the reactive species are supplied to the surface of the substrate 1614' and the byproducts are subsequently removed from the surface 166. An infrared lamp is used to heat the substrate 1 6 1 4 and the process space 1 6 1 8 . From the infrared lamp 1 6 1 , the jet travels through the upper quartz window 16〇4 of the upper quartz chamber 16〇5, and the lower quartz portion 1603 of the quartz chamber 1624. One or more cooling gases for the upper quartz chamber enter from inlet 1611 and are opened (1613) by outlet 1628. In the case where the processing chamber is a CVD or ALD type processing chamber, the precursor of the lower quartz chamber and the diluent, detergent and platoon system enter through inlet 1620 and pass through outlet 1638 (1622). The outlets 1 628 and 1 638 are controlled by the same vacuum pump s or with different pumps at the same pressure so that the pressures of the upper quartz chamber and the lower quartz chamber 1624 are equal. Thus, the UV radiation is desorbed from the surface 1616 of the substrate 1614 by starring the reactive species, the adsorption of the auxiliary reactants, and the by-products of the process. An example of a depositional uv cleaning process and the use of a uv-assisted deposition process to deposit an EPI thin process is further described in U.S. Patent Application Serial No. 1/866,471, the entire disclosure of which is incorporated herein by reference. This article is incorporated herein by way of a bow. In one example, a mixture of dioxane (ShH6) plus ammonia (NH3) is used in a processing chamber 1 600 at a preferred temperature, while a SiN film is formed at about 72 nm. The wavelength and the space; 1616 1616 1610 of the space through the 1605 and away from the implementation of deflation to leave the teaching, 1605 to 'help the E room, t the system of application 1 with its 400 ° C ^ deposition 5 to about 49 200811916 The power density between 10 mWatts/cm2 delivers UV radiation. Generally, the conventional tantalum nitride deposition process requires a temperature of about 650 ° C or higher.

In an embodiment of the cluster device, one or more measurement steps (eg, preparation/analysis steps of Figures 13-14) are performed after performing one or more UV-assisted substrate processing steps (eg, deposition steps) 302A). In this example, the measurement steps can be used to quickly analyze the state of one or more layers deposited on the surface of the substrate to allow the system controller to adjust the process variables of the substrate processing step to A process for forming the layer on the surface of the substrate is improved. Generally, such process variables can include, for example, UV shot intensity (e.g., power), deposition time, process pressure, process gas flow rate 'RF power, film thickness, or substrate temperature. In one example, an XRD device is used to measure and feedback the film stress deposited on the surface of the first substrate, so the system controller can, for example, adjust the UV power of the subsequent deposition process to improve the sink formed by the UV-assisted deposition process. The film properties of the laminate are such as stress. This process is very important where the characteristics of the deposited film layer (e.g., stress/tension) are very sensitive to the thermal environment during the deposition process. Integrating the measurement process steps into the cluster device allows for quick feedback of expected or unintended process results after a substrate manufacturing process step, thus improving 70 pieces by reducing the number of improperly treated substrates Yield, and improve the productivity of the cluster device by eliminating the wasted time of using multiple test wafers within the cluster device to pre-evaluate the need for one or more process steps in the process. While the invention has been described with respect to various embodiments of the present invention, several additional and further embodiments of the invention may be devised without departing from the scope of the present invention, and the scope of the invention is determined by the scope of the following claims. . BRIEF DESCRIPTION OF THE DRAWINGS For a detailed understanding of the features of the present invention described above, a more precise description of the present invention may be read by reference to the embodiments illustrated in the drawings. It is to be understood, however, that the appended claims

1 is a plan view of a conventional process system for a typical semiconductor process, which can be benefited by the use of the present invention; and FIG. 2 is a plan view of a process system including a process chamber and a measurement chamber suitable for performing a semiconductor process, It may be beneficial to use the present invention; Figure 3 is a plan view of a process system containing a processing chamber and a measurement chamber suitable for performing semiconductor processes, which may benefit from the use of the present invention; Figure 4 is suitable for performing semiconductor processes A plan view of a process system for a processing chamber and a measurement chamber in which the present invention may be used; Figure 5 illustrates a process sequence containing a series of process recipe steps and substrate transfer steps that may benefit from the use of the present invention; The figure is suitable for performing a cross-sectional side view of a support chamber of a semiconductor process, which may benefit from the use of the present invention; Figure 7 is a cross-sectional side view of a support chamber suitable for performing a semiconductor process, which may benefit from the use of the present invention; Figure 8 is a cross-sectional view of a transfer chamber and a support chamber suitable for performing a semiconductor process, which may benefit from the use of the present invention; Figure 9 is suitable for performing half A cross-sectional view of a transfer chamber and support chamber 51 200811916 that can benefit from the present invention; FIG. 10 is a cross-sectional view of a transfer chamber and a support chamber suitable for performing semiconductor processing, which can be used with the present invention Benefits; Figure 11 is a cross-sectional view of a transfer chamber and a support chamber suitable for performing a semiconductor process that can benefit from the use of the present invention; Figure 12 is a cross-sectional side view of a pre-cleaning chamber suitable for performing a semiconductor process, Benefits may be obtained using the present invention; Figure 13 illustrates a process sequence containing a series of process recipe steps and substrate transfer steps that may benefit from the use of the present invention; Figure 14 illustrates a series of process recipe steps and substrate transfer a process of the rounds, which may benefit from the use of the present invention; Figure 15 is a plan view of a process system containing a processing chamber, a pre-chamber, and a measuring chamber suitable for performing a semiconductor process, which may benefit from the use of the present invention; Figure 16 shows a process procedure containing a series of process recipe steps and substrate transfer steps, which can be benefited from the use of the present invention; the cavity surface step by step and the first section is suitable A side view of a substrate processing chamber that performs a semiconductor process, which can benefit from the use of the present invention. [Main Component Symbol Description] 100, 101 Cluster Device 102 System Controller 104 Front End Environment 104A Support Table 104B Transfer Area 105 Wafer : 106A-B Load Locking Chamber 108A-B Work Waste: Interface Robot Arm 52 200811916

110 Transfer chamber 110B Transfer chamber base 113, 330 Robot arm 113B Arm assembly 114A-114F Process position 120, 710, 770, 1120 4 201-204, 1600 Processing chamber 214A-D > 3 54A-B Position 110A Transfer chamber cover 110C, 35 1 transfer area Π 3A blade assembly 113C drive assembly 116A-B male chamber area 211 support chamber 300, 301 AC process program 3 02, 302A, 302B, 3 02C preparation / analysis step 302D UV cleaning process 310 Post-Processing/Analysis Step 350 Bonding Module 700 Particle Reduction Chamber 304, 306, 308 Process Step 33 1 Sliding Assembly 3 60 Wet Cleaning Chamber 701, 761 Enclosing 702, 752, 1110 Chamber Body 703, 75 3 Chamber cover 704, 754, 804 substrate support 705, 755 transparent zone 706, 756 seal

707, 757, 807 substrate support surfaces 711, 813, 1608 radiated to 722 heating element 736 vacuum pump 800, 801 support chamber assembly 811 measurement assembly 1100 pre-cleaning chamber 1102 substrate support member source 720, 820 lift assembly 735 gas transfer source 7 5 0 measurement chamber 808 support 812 sensor 1101 cover assembly 1111 slit valve opening 53 200811916

1112 fluid channel 1113 lining 1114 slit 1115 pumping channel 113 0, 1131 electrode 1132 power supply 1133 hole 1135 heating element 1140 support component 1141 fluid channel 1150 vacuum component 1160 gas source 1601 housing structure 1603 lower quartz part 1604 upper quartz window 1605 upper quartz Chamber 1610 Infrared Light 1611 > 1620 Inlet 1613, 1638 Outlet 1614 Substrate 1616 Substrate Surface 1617 Pedestal 1618 Process Space 1624 Lower Quartz Chamber 1630 Quartz Chamber

54

Claims (1)

200811916 X. Patent Application Scope 1. A substrate processing apparatus comprising: one or more side walls for forming a transmission area, a mechanical arm is disposed in the transmission area; a first support chamber, Arranged in the transmission area and used to measure characteristics of the surface of the substrate; A substrate processing chamber in communication with the transfer region; and a pre-cleaning chamber adapted to pre-prepare a surface of the substrate prior to performing the processing step in the substrate processing chamber. 2. The apparatus of claim i, wherein the transfer region maintains a pressure of between about 10 and 6 torr and about 700 torr. 3. The apparatus of claim 1, wherein the first support chamber is adapted to measure one using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (Xps), reflectometry or ellipsometry techniques. The characteristics of the surface of the substrate. The apparatus of claim 1, wherein the substrate processing chamber is a split-type plasma nitriding (DPN) chamber, a rapid thermal processing (RTP) chamber, a chemical vapor deposition (CVD) chamber, , an atomic layer deposition (ALD) cavity, or a physical vapor deposition (PVD) chamber. 5. The apparatus of claim 1, further comprising a second support 55 200811916 chamber adapted to remove contaminants from a surface of the substrate from the one or more side walls A source delivers violet light to the surface of the substrate to remove the contaminants. 6. The apparatus of claim 1, wherein the surface characteristic of the substrate measured in the chamber is a group selected from the group consisting of stress, tension, thickness and composition of the material to be read. a substrate processing apparatus comprising: one or more side walls forming a transfer area, the transfer having a robotic arm; one or more substrate processing chambers, and a support chamber with the transfer area, The robotic arm transportable chamber is adapted to measure characteristics of the surface of the substrate; and a processing chamber is in communication with the transfer region, comprising: a substrate support disposed within the processing chamber; a first source of radiation adapted to deliver one or more lengths of light to a material 8 on the substrate support. The holder is held at about 1 〇 6 Torr as described in claim 7 A device of about 7 inches, wherein the pressure between the brackets is transmitted by the outer line (UV) to the characteristics contained in the first support region. The communication area is provided with a connection; • 'the processing area of the processing chamber, a surface of the UV light wave. The apparatus of claim 7, wherein the one or more substrate processing chambers are coupled to a plasma nitriding (DPN) chamber, rapid thermal processing (RTP) A chamber, a chemical vapor deposition (CVD) chamber, or an atomic layer deposition (ALD) chamber. The apparatus of claim 7, wherein the support chamber is adapted to measure a base using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), reflectometry or ellipsometry techniques. The characteristics of the surface of the material. 11. The apparatus of claim 7, further comprising a second support chamber adapted to remove contaminants from a surface of the substrate by at least from the one or more sidewalls A second source of radiation coupled to one of the other transmits ultraviolet (UV) radiation to the surface of the substrate to remove the contaminant. 1 2. The apparatus of claim 7, wherein the first source of radiation is adapted to be transmitted at a power density of between about i and about 25 watts per square centimeter (mWatts/cm2). One or more wavelengths of light between about 1 〇 nanometer and about 43 〇 nanometer. 13. The apparatus of claim 7, wherein the processing chamber further comprises a source of gas adapted to pass a cleaning gas to the processing zone, wherein the cleaning gas contains hydrogen. 57. The apparatus of claim 7, further comprising: a wafer cassette adapted to accommodate two or more substrates; a load lock chamber that communicates with the robot arm, wherein the load a lock chamber adapted to evacuate to a pressure below atmospheric pressure; and a second robot arm adapted to transfer the two or more disposed within the pod between the pod and the load lock chamber One of the substrates The device of claim 7, wherein the surface property of the substrate measured in the support chamber is selected from the group consisting of stress, tension, thickness and composition of materials contained in the region. A characteristic of the ethnic group. 16. A substrate processing apparatus comprising: one or more side walls forming a transport region, wherein the transport region is a support chamber that is communicable with the robot arm' wherein the support chamber is adapted to measure a characteristic of the surface of the substrate; a first processing chamber in communication with the transfer region, wherein the first processing chamber The chamber comprises: a substrate support disposed within the processing region of the processing chamber; and a first source of radiation adapted to deliver one or more UV light 58 200811916 wavelengths in position on the substrate support a substrate surface; and a second processing chamber in communication with the transfer region, wherein the second processing chamber comprises: a substrate support disposed in the processing region of the processing chamber; a second radiation a source adapted to deliver one or more wavelengths of UV light to a substrate surface on the substrate support; and a gas enthalpy adapted to deliver a cleaning gas to the processing zone, wherein the cleaning gas comprises hydrogen. 1 ^7. The apparatus of claim 16, wherein the region of the transmission is maintained at a pressure of between about 1 〇 6 Torr and about 7 Torr. 1 8 The apparatus of claim 16, wherein the first processing system is a 7-knife light plasma nitriding (DPN) chamber, a rapid thermal processing chamber, a chemical vapor deposition (CVD) chamber. Or an atomic layer deposition (ALD) chamber. The device of claim i, wherein the support chamber is adapted to measure by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (Xps), reflectometry or ellipsometry techniques. The characteristics of the surface of the substrate. The apparatus of claim 16, further comprising a second support cavity to which it is adapted to remove contaminants from a surface of the substrate by at least one of the sidewalls from the one or more A second radiation connected to the source 59 200811916 The source transmits ultraviolet (UV) radiation to the surface of the substrate to remove the contaminant. The apparatus of claim 16, wherein the first and second sources of radiation are adapted to have a power density of between about 1 and about 25 watts per square centimeter (mWatts/cm2). One or more wavelengths of light are transmitted between about 120 nanometers and about 430 nanometers. 22. The apparatus of claim 16, wherein the surface of the substrate measured in the support chamber is characterized by a group selected from the group consisting of stress, tension, thickness and composition of materials contained in the region. A feature in the middle. 23. A method of forming a semiconductor component in a cluster device, comprising: modifying a surface of a substrate within a substrate processing chamber; measuring a property of a region of the substrate after modifying the surface of the substrate Measured characteristics and values stored in a system control gate, and a process-changing period during the surface treatment step of the substrate based on the measured characteristics and the ratio of the oscillation values stored in the system controller 24. The method of claim 23, wherein the step of measuring a special test comprises measuring a group selected from the group consisting of stress, tension, thickness and composition of the material in the region. Characteristics. 60. The method of claim 23, further comprising pre-cleaning the surface of the substrate prior to modifying the surface of the substrate. The method of claim 23, further comprising the step of removing contaminants from the surface of the substrate, wherein the step of removing the contaminant comprises: 钧 exposing the surface of the substrate to at least a radiation having a wavelength between about nanometer and about 30 nanometers; providing a cleaning gas containing hydrogen to the surface of the substrate; and heating the substrate to a temperature of less than about 750 °C. 2 7 The method of claim 23, wherein the step of modifying a surface of the village comprises performing an extraction process selected from a split-type plasma nitriding (7) process, an amorphous layer (EPI) deposition process, Processes in a population consisting of rapid thermal processing (RTP) processes, chemical vapor deposition (CVD) processes, atomic layer deposition (ALD) processes, and phase-to-phase (PVD) processes. 2 g. The method of claim 27, wherein the step of modifying a substrate is further comprising: exposing the surface of the substrate to at least one wavelength between about 12 期间 during the step of modifying the surface. From nanometer to about 430 nm under radiation. A method of forming a semiconductor device in a cluster device, comprising: 61 29. ^ 200811916 modifying a surface of a substrate in a substrate processing chamber; utilizing a robotic arm network disposed in the region of the wheel to the cluster The transmission area of the device; the measured characteristics of the surface of the substrate disposed within the transfer area are measured and stored in a system controlled and based on the measured characteristics and stored in the system control, To adjust the process in the process of modifying the surface of the substrate. 30. The method of claim 29, prior to the feature of claim 29, pre-clean the surface of the substrate. 31. The method of claim 29, wherein the step of characteristic of the region comprises: measuring a population selected from the group consisting of stress, tension, thickness and composition of the material. The method of item 29, before the feature of 70, exposes the surface of the substrate to an external (UV) surface to remove the contamination of the surface of the substrate. 3 〇 〇 全 太 • • • • • • The method according to item 29, wherein the step of the surface of the substrate comprises: performing a process selected from the group consisting of: (DPN) process, stone epitaxial layer (ΕΡΙ) deposition process, fast cable: a substrate setting property; ; The value of the value in the 丨. Containing the characteristics of the material contained in the above-mentioned measurement-I domain. L is contained in the formation of the I-ray source of violet 1 ° 7 modified as described above, plasma nitriding treatment (RTP) system 62 200811916 process, chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process and physical gas Processes in a population of phase deposition (PVD) processes. 34. The method of claim 29, further comprising removing contaminants from the surface of the substrate prior to forming the features of the element, wherein the step of removing the contaminant comprises: Exposing the surface of the substrate to radiation having a wavelength of at least between about 120 nm and about 430 nm; providing a cleaning gas containing hydrogen to the surface of the substrate; and heating the substrate to a temperature below about 750 °C temperature. 35. The method of claim 29, wherein the step of modifying a surface of the substrate further comprises: exposing the surface of the substrate to at least one wavelength to about 120 nm during the step of modifying the surface About 430 nm between the radiation. 63