TW200731390A - Selective removal chemistries for semiconductor applications, methods of production and uses thereof - Google Patents

Selective removal chemistries for semiconductor applications, methods of production and uses thereof

Info

Publication number
TW200731390A
TW200731390A TW095116492A TW95116492A TW200731390A TW 200731390 A TW200731390 A TW 200731390A TW 095116492 A TW095116492 A TW 095116492A TW 95116492 A TW95116492 A TW 95116492A TW 200731390 A TW200731390 A TW 200731390A
Authority
TW
Taiwan
Prior art keywords
production
methods
selective removal
semiconductor applications
removal chemistries
Prior art date
Application number
TW095116492A
Other languages
Chinese (zh)
Inventor
Deborah L Yellowaga
Ben Palmer
John S Starzynski
John A Mcfarland
Marie Lowe
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2004/038761 external-priority patent/WO2006054996A1/en
Priority claimed from US11/352,124 external-priority patent/US20060255315A1/en
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of TW200731390A publication Critical patent/TW200731390A/en

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Removal chemistry solutions and methods of production thereof are described herein that include at least one fluorine-based constituent, at least one chelating component, surfactant component, oxidizing component or combination thereof, and at least one solvent or solvent mixture. Removal chemistry solutions and methods of production thereof are also described herein that include at least one low H2O content fluorine-based constituent and at least one solvent or solvent mixture.
TW095116492A 2004-11-19 2006-05-10 Selective removal chemistries for semiconductor applications, methods of production and uses thereof TW200731390A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/US2004/038761 WO2006054996A1 (en) 2004-11-19 2004-11-19 Selective removal chemistries for semiconductor applications, methods of production and uses thereof
US11/352,124 US20060255315A1 (en) 2004-11-19 2006-02-10 Selective removal chemistries for semiconductor applications, methods of production and uses thereof

Publications (1)

Publication Number Publication Date
TW200731390A true TW200731390A (en) 2007-08-16

Family

ID=57913132

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116492A TW200731390A (en) 2004-11-19 2006-05-10 Selective removal chemistries for semiconductor applications, methods of production and uses thereof

Country Status (1)

Country Link
TW (1) TW200731390A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9771550B2 (en) 2013-12-11 2017-09-26 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9771550B2 (en) 2013-12-11 2017-09-26 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces

Similar Documents

Publication Publication Date Title
WO2007095101A3 (en) Selective removal chemistries for semiconductor applications, methods of production and uses thereof
WO2006085957A3 (en) Polymeric nanocomposites and processes for making the same
TW200707573A (en) A composition of etching reagent for metal material and a method for fabricating a semiconductor device by using the same
WO2007018944A3 (en) Gate electrode structures and methods of manufacture
MY155122A (en) Foaming agents and compositions containing fluorine substituted olefins, and methods of foaming
TW200745786A (en) Method for removing masking materials with reduced low-k dielectric material damage
TW200723469A (en) MEMS flip-chip packaging
TW200706641A (en) Selective high dielectric constant material etchant
WO2008027240A3 (en) Selective etch chemistries for forming high aspect ratio features and associated structures
WO2006104335A3 (en) Method and apparatus for reconfiguring a common channel
HK1076541A1 (en) Electro-osmotic pumps and micro-channels
WO2005121991A3 (en) Personal messaging proxy
WO2004037962A3 (en) Aqueous phosphoric acid compositions for cleaning semiconductor devices
TW200502425A (en) Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
WO2006107517A3 (en) Composition for cleaning ion implanted photoresist in front end of line applications
WO2012028793A3 (en) Treatment, before the bonding of a mixed copper oxide surface, by a plasma containing nitrogen and hydrogen
WO2010065459A3 (en) Method of etching organosiloxane dielectric material and semiconductor device thereof
TW200705237A (en) Retention of functionality and operational configuration for a portable data storage dirve
WO2010017433A3 (en) Use of sucralose as a granulating agent
TW200503088A (en) Unsaturated oxygenated fluorocarbons for selective anisotropic etch applications
TW200718809A (en) Plasma etching of tapered structures
WO2006024728A3 (en) Method for dissolving oil at low temperature
WO2007120263A3 (en) Preparation of dutasteride
TW200730667A (en) Palladium selective etching solution and method of controlling etching selectivity
TW200731390A (en) Selective removal chemistries for semiconductor applications, methods of production and uses thereof